TW202418846A - Sound producing cell, package structure, apparatus and forming methods thereof - Google Patents

Abstract

A package structure includes a cover and a cell disposed within the cover. The cell includes a membrane, an actuating layer and an anchor structure. The membrane includes a first membrane subpart and a second membrane subpart, wherein the first membrane subpart and the second membrane subpart are opposite to each other in a top view. The actuating layer is disposed on the first membrane subpart and the second membrane subpart in the top-view direction. The membrane is anchored by the anchor structure. The first membrane subpart includes a first anchored edge which is fully or partially anchored, and edges of the first membrane subpart other than the first anchored edge are non-anchored. The second membrane subpart includes a second anchored edge which is fully or partially anchored, and edges of the second membrane subpart other than the second anchored edge are non-anchored.

Description

Sound unit, packaging structure, device and forming method thereof

The present invention relates to a sound unit, a packaging structure, a device and a method for forming the same, and in particular to a sound unit with high yield and/or high performance, a packaging structure comprising the sound unit or a unit having a structure similar to the sound unit, a device comprising the packaging structure, a method for forming the sound unit, a method for forming the packaging structure and a method for forming the device.

Micro sound generating devices such as micro electro mechanical system (MEMS) micro speakers have developed rapidly in recent years because they can be used in various electronic devices due to their small size. For example, MEMS micro speakers can use thin film piezoelectric materials as actuators and silicon-containing layers as diaphragms, and they are formed by at least half semiconductor processes. In order to make micro speakers more widely used, the industry is committed to designing micro speakers with high yield and high performance.

Therefore, the main purpose of the present invention is to provide a sound unit with a specific slit design and/or a specific groove design to improve its yield and performance, and to provide a method for manufacturing the sound unit. The present invention also provides a packaging structure including the sound unit or a unit having a structure similar to the sound unit, and provides a method for forming the packaging structure. The present invention also provides a device including the packaging structure, and provides a method for forming the device.

An embodiment of the present invention provides a packaging structure, which includes a shell cover and a unit disposed in the shell cover. The unit includes a diaphragm, an actuating layer and an anchoring structure. The diaphragm includes a first diaphragm sub-portion and a second diaphragm sub-portion, wherein the first diaphragm sub-portion and the second diaphragm sub-portion are opposite to each other in a top view along a top-view direction, so that the first diaphragm sub-portion and the second diaphragm sub-portion are opposite to each other in a first direction perpendicular to the top-view direction. The actuating layer is disposed on the first diaphragm sub-portion and the second diaphragm sub-portion in the top-view direction. The diaphragm is anchored to the anchoring structure. The first diaphragm sub-portion includes a first anchoring edge, the first anchoring edge is fully connected or partially connected to the anchoring structure to be fully or partially anchored by the anchoring structure, and the edges of the first diaphragm sub-portion except the first anchoring edge are all non-anchored. The second diaphragm sub-portion includes a second anchoring edge, the second anchoring edge is fully connected or partially connected to the anchoring structure to be fully or partially anchored by the anchoring structure, and the edges of the second diaphragm sub-portion except the second anchoring edge are all non-anchored.

Another embodiment of the present invention provides a device, which includes a housing and the above-mentioned packaging structure.

Another embodiment of the present invention provides a method for forming a packaging structure, which includes: performing a manufacturing method to manufacture a unit; and setting the unit in a shell. The manufacturing method of the unit includes: providing a wafer, wherein the wafer includes a first layer and a second layer; and patterning the first layer of the wafer to form at least one channel line. The first layer includes a diaphragm, and the diaphragm is anchored to the anchoring structure of the unit, and at least one slit is formed in the diaphragm due to the channel line and penetrates the diaphragm. The diaphragm includes a first diaphragm sub-portion and a second diaphragm sub-portion, and the first diaphragm sub-portion and the second diaphragm sub-portion are opposite to each other in a top view along the top view direction, so that the first diaphragm sub-portion and the second diaphragm sub-portion are opposite to each other in a first direction perpendicular to the top view direction. The first diaphragm sub-portion includes a first anchoring edge, the first anchoring edge is fully connected or partially connected to the anchoring structure to be fully or partially anchored by the anchoring structure, and the edges of the first diaphragm sub-portion except the first anchoring edge are all non-anchored. The second diaphragm sub-portion includes a second anchoring edge, the second anchoring edge is fully connected or partially connected to the anchoring structure to be fully or partially anchored by the anchoring structure, and the edges of the second diaphragm sub-portion except the second anchoring edge are all non-anchored.

Another embodiment of the present invention provides a method for forming a device, the method comprising: forming a package structure according to the above-mentioned method; and assembling the package structure in a device including a housing through surface mount technology.

Another embodiment of the present invention provides a sound unit, which includes a diaphragm and an actuating layer. The diaphragm includes a first diaphragm sub-portion and a second diaphragm sub-portion, wherein the first diaphragm sub-portion and the second diaphragm sub-portion are opposite to each other. The actuating layer is arranged on the first diaphragm sub-portion and the second diaphragm sub-portion. The first diaphragm sub-portion includes a first anchoring edge, the first anchoring edge is fully anchored or partially anchored, and the edges of the first diaphragm sub-portion except the first anchoring edge are all non-anchored. The second diaphragm sub-portion includes a second anchoring edge, the second anchoring edge is fully anchored or partially anchored, and the edges of the second diaphragm sub-portion except the second anchoring edge are all non-anchored.

Another embodiment of the present invention provides a method for manufacturing a sound unit, the method comprising: providing a wafer, wherein the wafer comprises a first layer and a second layer; patterning the first layer of the wafer to form at least one channel line; and placing the wafer on a substrate. The first layer comprises a diaphragm, and at least one slit is formed in the diaphragm due to the channel line and penetrates the diaphragm. The diaphragm comprises a first diaphragm sub-portion and a second diaphragm sub-portion, wherein the first diaphragm sub-portion and the second diaphragm sub-portion are opposite to each other. The first diaphragm sub-portion comprises a first anchoring edge, the first anchoring edge is fully anchored or partially anchored, and the edges in the first diaphragm sub-portion except the first anchoring edge are all non-anchored. The second diaphragm sub-portion includes a second anchoring edge, the second anchoring edge is fully anchored or partially anchored, and the edges in the second diaphragm sub-portion except the second anchoring edge are non-anchored.

The purpose of the present invention should be apparent to those skilled in the art after reading the following detailed description of the embodiments illustrated in the various accompanying drawings.

In order to enable the general knowledge in the field to further understand the present invention, the preferred embodiments of the present invention, the typical materials or parameter ranges of the key components are described in detail below, and the components and the intended effects of the present invention are described in conjunction with the marked drawings. It should be noted that the drawings are simplified schematic diagrams, and the materials and parameter ranges of the key components are described based on the current technology. Therefore, only the components and combination relationships related to the present invention are shown to provide a clearer description of the basic structure, implementation method or operation of the present invention. The actual components and layout may be more complex, and the materials or parameter ranges used may change with the development of future technology. In addition, for the convenience of explanation, the components shown in the drawings of the present invention may not be drawn in proportion to the actual number, shape, and size, and the details may be adjusted according to design requirements.

In the following description and patent application, words such as "include", "contain", "have" and the like are open-ended words, and therefore should be interpreted as "including but not limited to..." Therefore, when the terms "include", "contain" and/or "have" are used in the description of the present invention, they specify the existence of corresponding features, regions, steps, operations and/or components, but do not exclude the existence of one or more corresponding features, regions, steps, operations and/or components.

In the following description and patent application, when "B1 component is formed by C1", C1 exists in the formation of B1 component or C1 is used in the formation of B1 component, and the formation of B1 component does not exclude the existence and use of one or more other features, regions, steps, operations and/or components.

In the following description and patent application, the term "horizontal direction" refers to a direction parallel to a horizontal plane, the term "horizontal plane" refers to a surface parallel to the directions X and Y in the attached drawings, and the terms "vertical direction" and "top view direction" refer to a direction parallel to the direction Z in the attached drawings, wherein the directions X, Y, and Z are perpendicular to each other. In the following description and patent application, the terms "top view" and "bottom view" refer to the viewing result along the vertical direction, and the term "side view" refers to the viewing result along the horizontal direction.

In the following specification and patent application, the term "substantially" means that slight deviations may or may not exist. For example, the term "substantially parallel" and "substantially along" means that the angle between two components can be less than or equal to a specific angle value, such as 10 degrees, 5 degrees, 3 degrees or 1 degree. For example, the term "substantially aligned" means that the deviation between two components can be less than or equal to a specific differential value, such as 2μm (micrometers) or 1μm. For example, the term "substantially the same" means that the deviation is within a given value or a given range, such as 10%, 5%, 3%, 2%, 1% or 0.5%.

The ordinal numbers used in the specification and patent application, such as "first", "second", etc., are used to modify the components. They do not imply or represent any previous ordinal number of the component (or components), nor do they represent the order of one component to another component, or the order of the manufacturing method. The use of these ordinal numbers is only used to make a component with a certain name clearly distinguishable from another component with the same name. The patent application and the specification may not use the same terms. Accordingly, the first component in the specification may be the second component in the patent application.

It should be noted that the following embodiments can replace, reorganize, or mix features in several different embodiments to complete other embodiments without departing from the spirit of the invention. The features of each embodiment can be mixed and matched as long as they do not violate the spirit of the invention or conflict with each other.

In the present invention, the sound unit can perform acoustic transformation, wherein the acoustic transformation can convert a signal (e.g., an electrical signal or other suitable type of signal) into a sound wave. In some embodiments, the sound unit can be a sound generating device, a speaker, a micro speaker or other suitable device to convert an electrical signal into a sound wave, but is not limited thereto. It should be noted that the operation of the sound unit refers to the acoustic transformation performed by the sound unit (e.g., the sound wave is generated by activating the sound unit through an electrical drive signal).

In the use of the sound unit, the sound unit can be arranged on a substrate. The substrate can be a hard substrate or a flexible substrate, wherein the substrate may include silicon, germanium, glass, plastic, quartz, sapphire, metal, polymer (e.g., polyimide (PI), polyethylene terephthalate (PET)), any suitable material or a combination thereof. In one example, the substrate may be a circuit board including a laminate (e.g., a copper clad laminate (CCL)), a land grid array board (LGA board) or any other suitable board containing a conductive material, but is not limited thereto. It should be noted that the normal direction of the substrate may be parallel to the direction Z in the attached figure.

Please refer to FIG. 1 and FIG. 2, FIG. 1 is a schematic top view of the sound unit of the first embodiment of the present invention, and FIG. 2 is an enlarged schematic view of the structure in the region R1 of FIG. 1. As shown in FIG. 1, the sound unit 100 includes a diaphragm 110 and at least one anchoring structure 120 outside the diaphragm 110, wherein the diaphragm 110 is connected to the anchoring structure 120 to be anchored by the anchoring structure 120. For example, the diaphragm 110 may be surrounded by the anchoring structure 120, but is not limited thereto.

During operation of the sound unit 100, the diaphragm 110 can be actuated to move. In the present embodiment, the diaphragm 110 can be actuated to move upward and downward, but is not limited thereto. It should be noted that in the present invention, the terms "moving upward" and "moving downward" mean that the diaphragm 110 substantially moves along the direction Z. During operation of the sound unit 100, the anchoring structure 120 can be fixed. In other words, during operation of the sound unit 100, the anchoring structure 120 can be a fixed end (or a fixed edge) relative to the diaphragm 110.

The shape of the diaphragm 110 can be designed according to the requirements. In some embodiments, the shape of the diaphragm 110 can be a polygon (e.g., a rectangle or a rectangle with chamfered corners), a shape with curved edges, or other suitable shapes, but not limited thereto. For example, the shape of the diaphragm 110 shown in FIG. 1 can be a rectangle with chamfered corners, but not limited thereto.

The diaphragm 110 and the anchor structure 120 may include any suitable material. In some embodiments, the diaphragm 110 and the anchor structure 120 may each include silicon (e.g., single crystal silicon or polycrystalline silicon), silicon compounds (e.g., silicon carbide, silicon oxide), germanium, germanium compounds, gallium, gallium compounds (e.g., gallium nitride, gallium arsenide), or a combination thereof, but is not limited thereto. The diaphragm 110 and the anchor structure 120 may have the same or different materials.

In the present invention, the diaphragm 110 may include a plurality of sub-sections. As shown in FIG. 1 , the diaphragm 110 includes a first diaphragm sub-portion 112 and a second diaphragm sub-portion 114, wherein the first diaphragm sub-portion 112 and the second diaphragm sub-portion 114 are opposite to each other in a top view (i.e., the first diaphragm sub-portion 112 and the second diaphragm sub-portion 114 are opposite to each other in a horizontal direction (e.g., direction Y) perpendicular to the top view direction (i.e., direction Z)), only one edge of the first diaphragm sub-portion 112 is anchored by being connected to the anchor structure 120, only one edge of the second diaphragm sub-portion 114 is anchored by being connected to the anchor structure 120, and the other edges of the first diaphragm sub-portion 112 and the other edges of the second diaphragm sub-portion 114 are non-anchored and not connected to the anchor structure 120 (hereinafter, these edges are referred to as “non-anchored edges”). In other words, in FIG. 1 , the first anchoring edge 112a of the first diaphragm subsection 112 is the only anchored edge of the first diaphragm subsection 112, and the second anchoring edge 114a of the second diaphragm subsection 114 is the only anchored edge of the second diaphragm subsection 114, wherein the first diaphragm subsection 112 is directly connected to the anchoring structure 120 only through the first anchoring edge 112a, and the second diaphragm subsection 114 is directly connected to the anchoring structure 120 only through the second anchoring edge 114a. In the present invention, the first anchoring edge 112a and the second anchoring edge 114a may be fully anchored or partially anchored. For example, in the embodiment shown in FIG. 1 , the first anchor edge 112 a and the second anchor edge 114 a are completely anchored.

As shown in FIG. 1 , the diaphragm 110 has a plurality of slits SL, wherein the diaphragm 110 can be divided into a plurality of sub-portions through the slits SL. In the present invention, the slits SL can have at least one straight line pattern, at least one curved line pattern or a combination thereof, and the width of the slits SL should be sufficiently small. For example, the width of the slits SL can be 1 µm (micrometer) to 5 µm, but is not limited thereto.

In Figure 1 and Figure 2, the diaphragm 110 may have a first slit SL1, at least one second slit SL2 and at least one third slit SL3, wherein the first slit SL1 may be formed between the first diaphragm sub-portion 112 and the second diaphragm sub-portion 114, the second slit SL2 may be formed between the first diaphragm sub-portion 112 and the anchor structure 120, the third slit SL3 may be formed between the second diaphragm sub-portion 114 and the anchor structure 120, one end of the second slit SL2 may be located in a corner region CR of the diaphragm 110 (as shown in Figure 2), and one end of the third slit SL3 may be located in another corner region CR of the diaphragm 110. For example, in Figure 1, the diaphragm 110 may have a first slit SL1, two second slits SL2 and two third slits SL3, all of which have straight line patterns, the first diaphragm sub-portion 112 may be between the two second slits SL2 in a top view, and the second diaphragm sub-portion 114 may be between the two third slits SL3 in a top view, but this is not limited to.

In Fig. 1, the non-anchored edge of each sub-section can be realized by a slit SL. Regarding the first diaphragm sub-section 112, a first non-anchored edge 112n1 relative to the first anchored edge 112a in a top view can be defined by a first slit SL1, and a second non-anchored edge 112n2 adjacent to the first anchored edge 112a can be defined by a second slit SL2. Regarding the second diaphragm sub-portion 114, a third non-anchor edge 114n3 relative to the second anchor edge 114a in a plan view may be defined by a first slit SL1, and a fourth non-anchor edge 114n4 adjacent to the second anchor edge 114a may be defined by a third slit SL3.

In the present invention, the shape of the sub-portion of the diaphragm 110 can be designed according to the requirements, wherein the shape of the sub-portion of the diaphragm 110 can be a polygon (e.g., a rectangle), a shape with curved edges, or other suitable shapes. For example, in FIG. 1 , the shape of the first diaphragm sub-portion 112 and the shape of the second diaphragm sub-portion 114 can be substantially rectangular, and the first diaphragm sub-portion 112 and the second diaphragm sub-portion 114 can be substantially congruent, but not limited thereto. Therefore, in FIG. 1, the second non-anchored edge 112n2 may be adjacent to and located between the first non-anchored edge 112n1 and the first anchored edge 112a, and the fourth non-anchored edge 114n4 may be adjacent to and located between the third non-anchored edge 114n3 and the second anchored edge 114a, but the present invention is not limited thereto. In FIG. 1, the second slit SL2 and the third slit SL3 are connected to the first slit SL1. For example, the first slit SL1 may be connected between two second slits SL2 and between two third slits SL3, but the present invention is not limited thereto.

Since the shapes of the first diaphragm sub-portion 112 and the second diaphragm sub-portion 114 can be substantially rectangular, the first anchor edge 112a, the first non-anchor edge 112n1, the second anchor edge 114a and the third non-anchor edge 114n3 are substantially parallel to each other and have substantially the same length, and the second non-anchor edge 112n2 and the fourth non-anchor edge 114n4 are substantially parallel to each other (i.e., parallel to the direction X) and have substantially the same length. In other words, the first slit SL1 defining the first non-anchor edge 112n1 and the third non-anchor edge 114n3 is parallel to the first anchor edge 112a and the second anchor edge 114a.

In some embodiments, in FIG. 1 , the second slit SL2 and the third slit SL3 may be connected to each other, so that the second slit SL2 and the third slit SL3 may be combined to form a long straight slit, but the present invention is not limited thereto.

As shown in FIG. 1 , the first anchoring edge 112a of the first diaphragm sub-portion 112 is one edge of the diaphragm 110, and the second anchoring edge 114a of the second diaphragm sub-portion 114 is the other edge of the diaphragm 110. The second non-anchoring edge 112n2 of the first diaphragm sub-portion 112 may or may not be the edge of the diaphragm 110, and the fourth non-anchoring edge 114n4 of the second diaphragm sub-portion 114 may or may not be the edge of the diaphragm 110. For example, in Figure 1, the second non-anchored edge 112n2 of the first diaphragm sub-portion 112 may not be the edge of the diaphragm 110, and the fourth non-anchored edge 114n4 of the second diaphragm sub-portion 114 may not be the edge of the diaphragm 110, so that the second slit SL2 may be located between the first diaphragm sub-portion 112 and an edge of the diaphragm 110 in a top view, and the third slit SL3 may be located between the second diaphragm sub-portion 114 and an edge of the diaphragm 110 in a top view, but it is not limited to this.

It should be noted that the slits SL can release the residual stress of the diaphragm 110 , wherein the residual stress is generated during the manufacturing process of the diaphragm 110 or originally exists in the diaphragm 110 .

The sound unit 100 may include an actuating layer 130 disposed on the diaphragm 110 in the direction Z, and the actuating layer 130 is used to actuate the diaphragm 110. In some embodiments, as shown in FIG. 1 , the actuating layer 130 may not completely overlap the diaphragm 110 in a top view. For example, in FIG. 1 , the actuating layer 130 may be disposed on the first diaphragm sub-portion 112 and the second diaphragm sub-portion 114, and the actuating layer 130 may overlap a portion of the first diaphragm sub-portion 112 and a portion of the second diaphragm sub-portion 114 in a top view. Alternatively, in FIG. 1 , the actuating layer 130 may be disposed on and overlap the anchoring structure 120 , and the actuating layer 130 may overlap the anchoring edge of a sub-portion of the diaphragm 110 , but is not limited thereto.

As shown in FIG. 1 , in a top view, there is a distance between the actuating layer 130 and the slit SL to improve the reliability of the slit SL and the actuating layer 130 , but the present invention is not limited thereto.

The actuation layer 130 may include an actuator having a monotonic electromechanical conversion function for the movement of the diaphragm 110 along the direction Z. In some embodiments, the actuation layer 130 may include a piezoelectric actuator, an electrostatic actuator, a nanoscopic-electrostatic-drive (NED) actuator, an electromagnetic actuator, or any other suitable actuator, but is not limited thereto. For example, in one embodiment, the actuation layer 130 may include a piezoelectric actuator, which may include, for example, two electrodes and a piezoelectric material layer (e.g., lead zirconate titanate (PZT)) disposed between the two electrodes, wherein the piezoelectric material layer may actuate the diaphragm 110 according to a driving signal (e.g., a driving voltage) received by the electrodes, but the invention is not limited thereto. For example, in another embodiment, the actuation layer 130 may include an electromagnetic actuator (e.g., a planar coil), wherein the electromagnetic actuator may actuate the diaphragm 110 according to a received driving signal (e.g., a driving current) and a magnetic field (i.e., the diaphragm 110 may be actuated by an electromagnetic force), but the invention is not limited thereto. For example, in another embodiment, the actuating layer 130 may include an electrostatic actuator (e.g., a conductive plate) or a NED actuator, wherein the electrostatic actuator or the NED actuator may actuate the diaphragm 110 according to a received driving signal (e.g., a driving voltage) and an electric field (i.e., the diaphragm 110 may be actuated by electrostatic force), but is not limited thereto.

The diaphragm 110 is actuated by the actuation layer 130 to move along the direction Z to perform acoustic conversion. In other words, a sub-portion of the diaphragm 110 can be actuated to move up and down to perform acoustic conversion. It should be noted that sound waves are generated due to the movement of the diaphragm 110 caused by the actuation of the actuation layer 130, and the movement of the diaphragm 110 is related to the sound pressure level (SPL) of the sound waves.

When the sub-sections move up and down, openings are formed in the direction Z, and these openings are adjacent to all non-anchored edges of the sub-sections. For example, in the operation of the sound unit 100, a central opening may be formed between a first non-anchored edge 112n1 of the first diaphragm sub-section 112 and a third non-anchored edge 114n3 of the second diaphragm sub-section 114, and a plurality of side openings may be formed between a second non-anchored edge 112n2 of the first diaphragm sub-section 112 and the anchoring structure 120 and between a fourth non-anchored edge 114n4 of the second diaphragm sub-section 114 and the anchoring structure 120, respectively.

The multiple subsections of the diaphragm 110 may move in the same direction or in different directions as required. In some embodiments, the first diaphragm subsection 112 and the second diaphragm subsection 114 may move up and down synchronously in the direction Z (i.e., the first diaphragm subsection 112 and the second diaphragm subsection 114 may be actuated to move in the same direction) to avoid forming a large central opening between the first diaphragm subsection 112 and the second diaphragm subsection 114, but the present invention is not limited thereto.

The actuating layer 130 can actuate the diaphragm 110 to generate sound waves based on the received driving signal. The sound waves correspond to the input audio signal, and the driving signal applied to the actuating layer 130 corresponds to (is related to) the input audio signal.

It should be noted that the short side of the sound unit 100 (or diaphragm 110) may be beneficial for obtaining a higher resonance frequency, and the long side of the sound unit 100 (or diaphragm 110) may be beneficial for expanding the sound pressure level. In other words, a sound unit 100 (or diaphragm 110) with a large aspect ratio (i.e., the ratio of the length of the long side to the length of the short side) can achieve a higher resonance frequency and a larger sound pressure level than a unit with a small aspect ratio. The aspect ratio of the sound unit 100 (or diaphragm 110) may depend on actual needs. For example, the aspect ratio of the sound unit 100 (or the diaphragm 110) may be greater than 2 to enhance the performance of the sound unit 100, but is not limited thereto.

In the following, the details of the manufacturing method of the sound unit 100 will be further exemplified. It should be noted that in the following manufacturing method, the actuation layer 130 in the sound unit 100 may include a piezoelectric actuator, but is not limited thereto. The actuation layer 130 of the sound unit 100 may use any suitable type of actuator.

In the following manufacturing method, the formation process may include atomic layer deposition (ALD), chemical vapor deposition (CVD), other suitable processes or combinations thereof. The patterning process may include, for example, photolithography, etching process, any other suitable process or combinations thereof.

Please refer to FIG. 3 to FIG. 8, which are schematic diagrams showing the structure of the sound unit manufacturing method of an embodiment of the present invention at different stages. In this embodiment, the sound unit 100 can be manufactured by at least a semiconductor process to form a MEMS chip, but is not limited to this. As shown in FIG. 3, a wafer WF is provided, wherein the wafer WF may include a first layer WL1 and a second layer WL2, and may optionally include an insulating layer WL3 between the first layer WL1 and the second layer WL2.

The first layer WL1, the insulating layer WL3, and the second layer WL2 may each include any suitable material, so that the wafer WF may be of any suitable type. For example, the first layer WL1 and the second layer WL2 may each include silicon (e.g., single crystal silicon or polycrystalline silicon), silicon compounds (e.g., silicon carbide, silicon oxide), germanium, germanium compounds, gallium, gallium compounds (e.g., gallium nitride, gallium arsenide), or a combination thereof, but not limited thereto. In some embodiments, the first layer WL1 may include single crystal silicon, so that the wafer WF may be a silicon-on-insulator (SOI) wafer, but not limited thereto. For example, the insulating layer WL3 may include an oxide, such as silicon oxide (e.g., silicon dioxide), but not limited thereto. The thicknesses of the first layer WL1, the insulating layer WL3 and the second layer WL2 can be adjusted according to requirements.

In FIG. 3 , the compensating oxide layer CPS may be selectively formed on the upper side of the wafer WF, wherein the upper side is higher than the upper surface WL1a of the first layer WL1 opposite to the second layer WL2, so that the first layer WL1 is located between the compensating oxide layer CPS and the second layer WL2. The material of the oxide contained in the compensating oxide layer CPS and the thickness of the compensating oxide layer CPS may be designed as required.

3, the first conductive layer CT1 and the actuating material AM may be sequentially formed on the upper side of the wafer WF (formed on the first layer WL1), so that the first conductive layer CT1 may be located between the actuating material AM and the first layer WL1. In some embodiments, the first conductive layer CT1 and the actuating material AM may contact each other.

The first conductive layer CT1 may include any suitable conductive material, and the actuating material AM may include any suitable material. In some embodiments, the first conductive layer CT1 may include a metal (e.g., platinum), and the actuating material AM may include a piezoelectric material, but not limited thereto. For example, the piezoelectric material may include, but not limited to, lead-zirconate-titanate (PZT) material. In addition, the thickness of the first conductive layer CT1 and the thickness of the actuating material AM may be adjusted according to requirements.

Then, in FIG. 3 , the actuating material AM, the first conductive layer CT1 and the compensating oxide layer CPS may be patterned sequentially.

As shown in FIG. 4 , an isolation insulating layer SIL may be formed on the actuating material AM and patterned, and the thickness and material of the isolation insulating layer SIL may be designed according to requirements. For example, the material of the isolation insulating layer SIL may be oxide, but is not limited thereto.

As shown in FIG. 4 , the second conductive layer CT2 may be formed on the actuating material AM and the isolation insulating layer SIL, and then the second conductive layer CT2 may be patterned. The thickness and material of the second conductive layer CT2 may be designed according to requirements. For example, the second conductive layer CT2 may include metal (e.g., platinum), but is not limited thereto. For example, the second conductive layer CT2 may contact the actuating material AM.

The actuating material AM, the first conductive layer CT1 and the second conductive layer CT2 can be sub-layers in the actuating layer 130 of the sound unit 100, so that the actuating layer 130 has a piezoelectric actuator including two electrodes and the actuating material AM located between the two electrodes (for example, the first conductive layer CT1 and the second conductive layer CT2 serve as the first electrode and the second electrode in the actuating layer 130, respectively).

In FIG. 4 , the isolation insulating layer SIL may be used to isolate at least a portion of the first conductive layer CT1 from at least a portion of the second conductive layer CT2.

As shown in Fig. 5, the first layer WL1 of the wafer WF may be patterned to form a trench line TL. In Fig. 5, the trench line TL is a portion of the first layer WL1 that is removed. That is, the trench line TL is located between two portions of the first layer WL1.

As shown in FIG. 6 , the wafer WF is placed on the substrate SB and the adhesive layer AL, wherein the adhesive layer AL is adhered between the substrate SB and the first layer WL1 of the wafer WF. In FIG. 6 , the actuating layer 130 is located between the wafer WF and the substrate SB. Due to this step, the first layer WL1 of the wafer WF and the structure disposed on the upper side of the wafer WF (i.e., the structure located on the upper surface WL1a of the wafer WF) can be protected in subsequent steps.

As shown in FIG. 7 , the second layer WL2 of the wafer WF may be patterned so that the second layer WL2 forms an anchoring structure 120, and the first layer WL1 forms a diaphragm 110 anchored by the anchoring structure 120. In detail, the second layer WL2 of the wafer WF may have a first portion and a second portion, the first portion of the second layer WL2 may be removed, and the second portion of the second layer WL2 may form the anchoring structure 120. Since the first portion of the second layer WL2 is removed, the first layer WL1 forms a diaphragm 110, wherein the diaphragm 110 corresponds to the first portion of the second layer WL2 that is removed in a top view. For example, the first portion of the second layer WL2 may be removed by a deep reactive ion etching (DRIE) process, but is not limited thereto. It should be noted that when the first layer WL1 of the wafer WF is patterned to form the trench lines TL, the designs of the sub-portions of the diaphragm 110 (eg, the first diaphragm sub-portion 112 and the second diaphragm sub-portion 114 ) may be determined.

Optionally, in FIG. 7 , since the insulating layer WL3 of the wafer WF exists, after the second layer WL2 of the wafer WF is patterned, the portion of the insulating layer WL3 corresponding to the first portion of the second layer WL2 may be removed so that the first layer WL1 forms the diaphragm 110 , but not limited thereto.

In addition, in FIG. 7 , the second portion of the second layer WL2 , the portion of the insulating layer WL3 overlapping the second portion of the second layer WL2 , and the portion of the first layer WL1 overlapping the second portion of the second layer WL2 may be combined to form an anchor structure 120 .

As shown in FIG8 , the substrate SB and the adhesive layer AL can be removed by a suitable process to complete the manufacture of the sound unit 100. For example, the substrate SB and the adhesive layer AL can be removed by a peel-off process, but the present invention is not limited thereto.

In FIG. 8 , since the first portion of the second layer WL2 is removed so that the first layer WL1 forms the diaphragm 110, the slit SL is formed in the diaphragm 110 due to the trench line TL and penetrates the diaphragm 110. Since the slit SL can be formed due to the trench line TL, the width of the trench line TL can be designed according to the requirements of the slit SL. For example, the width of the trench line TL can be less than or equal to 5 µm, less than or equal to 3 µm, less than or equal to 2 µm, so that the slit SL can have a desired width, but is not limited thereto.

The sound unit and the manufacturing method thereof of the present invention are not limited to the above-mentioned embodiments, and other embodiments will be disclosed below. However, in order to simplify the description and highlight the differences between each embodiment and the above-mentioned embodiment, the same reference numerals are used below to mark the same elements, and the repeated parts will not be elaborated.

Please refer to FIG. 9 and FIG. 10, FIG. 9 is a schematic top view of the sound unit of the second embodiment of the present invention, and FIG. 10 is an enlarged schematic view of the structure in the area R2 of FIG. 9. As shown in FIG. 9 and FIG. 10, the difference between this embodiment and the first embodiment is that the sound unit 200 of this embodiment includes a groove structure RS disposed outside the diaphragm 110 and at the corner of the sound unit 200, wherein the groove structure RS is directly connected to the slit segment SLs in the corner region CR of the diaphragm 110. In the embodiment shown in FIG. 9, the sound unit 200 may include four groove structures RS disposed outside the diaphragm 110 and at the four corners of the sound unit 200, but is not limited thereto.

The slit segment SLs in the corner region CR may be a slit SL connected to the second slit SL2 or the third slit SL3, or the slit segment SLs in the corner region CR may be a part of the second slit SL2 or a part of the third slit SL3. The slit segment SLs may have a curved pattern, a straight line pattern, or a combination thereof. For example, in FIG. 10 , the slit segment SLs may be connected between one end of the second slit SL2 in the corner region CR and the groove structure RS, and the slit segment SLs may have a curved pattern, but is not limited thereto.

As shown in FIGS. 9 and 10 , the groove structure RS may be formed on the anchor structure 120 and located at the corner of the sound unit 200. For example, the sound unit 200 may have a first layer WL1 and a second layer WL2 disposed under the first layer WL1 (e.g., FIG. 8 ), wherein a portion of the first layer WL1 may be used as a diaphragm 110 (i.e., the first layer WL1 may include the diaphragm 110), another portion of the first layer WL1 may surround the diaphragm 110 and be combined with the second layer WL2 to form the anchor structure 120, the slit segment SLs in the corner region CR of the diaphragm 110 may pass through the first layer WL1, and the groove structure RS may pass through the first layer WL1 and have a bottom portion belonging to the anchor structure 120 (e.g., the second layer WL2), but is not limited thereto. In this case, regarding the manufacturing method of the sound unit 200, the slit SL and the groove structure RS of the diaphragm 110 can be patterned (etched) in the same process (the same etching process).

As shown in Figures 9 and 10, the groove structure RS may have a curved pattern, and the curved pattern of the groove structure RS may be designed according to requirements. For example, in Figure 10, the slit segments SLs of the corner region CR and the groove structure RS may be combined to form a semicircular arc pattern, but the present invention is not limited thereto.

The existence of the curved groove structure RS connecting the slit segments SLs located in the corner region CR can improve the success rate of the manufacturing process of the sound unit 200, thereby improving the yield of the sound unit 200. In detail, in the step of removing the substrate SB and the adhesive layer AL (e.g., a peeling process), due to the existence of the curved groove structure RS connecting the slit segments SLs located in the corner region CR, the stress concentration position can be changed from the corner region CR of the diaphragm 110 (e.g., one end of the slit SL) to the groove structure RS, and the stress applied to the groove structure RS can be dispersed to reduce damage to the diaphragm 110 in this process. In addition, since the groove structure RS has a curved pattern, the stress applied to the groove structure RS in this process can be more effectively dispersed to reduce damage to the groove structure RS, thereby improving the success rate of the manufacturing process of the sound unit 200.

Please refer to FIG. 11, which is a top view schematic diagram of the sound unit of the third embodiment of the present invention. As shown in FIG. 11, the difference between this embodiment and the first embodiment is that the diaphragm 110 of the sound unit 300 of this embodiment includes a latch structure 310. When the first diaphragm sub-portion 112 and the second diaphragm sub-portion 114 move along the direction Z (i.e., the normal direction of the substrate on which the diaphragm 110 is provided), when the moving distance of the first diaphragm sub-portion 112 in the direction Z and the moving distance of the second diaphragm sub-portion 114 in the direction Z are greater than the valve value, the latch structure 310 can lock the first diaphragm sub-portion 112 and the second diaphragm sub-portion 114. In other words, the latching structure 310 is used to limit the moving distance of the first diaphragm sub-portion 112 and the second diaphragm sub-portion 114 .

Because the sub-portion of the diaphragm 110 has only one anchoring edge, the sub-portion of the diaphragm 110 may be fragile and may be damaged during the manufacturing process. In the present embodiment, the presence of the latching structure 310 can improve the success rate of manufacturing the diaphragm 110, thereby improving the yield of the sound unit 300. In detail, in the step of removing the substrate SB and the adhesive layer AL (e.g., a peeling process), the displacement of the first diaphragm sub-portion 112 along the direction Z and the displacement of the second diaphragm sub-portion 114 along the direction Z are caused by the adhesive force of the adhesive layer AL. In this case, when the displacement of the first diaphragm sub-section 112 and the second diaphragm sub-section 114 in the direction Z is greater than the valve value, the latch structure 310 can lock the first diaphragm sub-section 112 and the second diaphragm sub-section 114 to limit the movement of the first diaphragm sub-section 112 and the second diaphragm sub-section 114, and provide a restoring force for the first diaphragm sub-section 112 and the second diaphragm sub-section 114, thereby reducing damage to the diaphragm 110.

The latch structure 310 may have any suitable design as required. In the present embodiment, the latch structure 310 shown in FIG. 11 may be formed by the slits SL. For example, in FIG. 11 , the latch structure 310 may be formed by two first slits SL1 and three fourth slits SL4, SL4', wherein the first slit SL1 and the fourth slits SL4, SL4' may be between the first diaphragm sub-portion 112 and the second diaphragm sub-portion 114, and the three fourth slits SL4, SL4' may be connected between the two first slits SL1. In FIG. 11 , the first slits SL1 may be parallel to each other, but this is not limited thereto. In Figure 11, the fourth slit SL4' extending along the direction X can be connected between two fourth slits SL4 extending along the direction Y, and the fourth slit SL4 extending along the direction Y can be connected between the fourth slit SL4' extending along the direction X and the first slit SL1 extending along the direction X, but not limited to this.

As shown in FIG. 11 , the latching structure 310 may include a first latching element 312 and a second latching element 314. The first latching element 312 may be a part of the first diaphragm sub-portion 112 (equivalently, the first latching element 312 may belong to the first diaphragm sub-portion 112), and the second latching element 314 may be a part of the second diaphragm sub-portion 114 (equivalently, the second latching element 314 may belong to the second diaphragm sub-portion 114). In FIG. 11 , the first latching element 312 may be disposed between the second latching element 314 of the second diaphragm sub-portion 114 and another part of the second diaphragm sub-portion 114, and the second latching element 314 may be disposed between the first latching element 312 of the first diaphragm sub-portion 112 and another part of the first diaphragm sub-portion 112. For example, in FIG. 11 , the long direction of the first latching element 312 and the long direction of the second latching element 314 may be substantially parallel to the direction X, but the present invention is not limited thereto.

When the first diaphragm sub-portion 112 and the second diaphragm sub-portion 114 move along the direction Z and the displacement is greater than the valve value, the first latching element 312 and the second latching element 314 are interlocked to lock the first diaphragm sub-portion 112 and the second diaphragm sub-portion 114. It should be noted that the width of the slit SL and the size of the latching element are related to the latching effect of the latching structure 310.

Please refer to FIG. 12, which is a schematic top view of the sound unit of the fourth embodiment of the present invention. As shown in FIG. 12, the difference between this embodiment and the first embodiment is that the diaphragm 110 of the sound unit 400 of this embodiment includes at least one spring connected between the sub-sections of the diaphragm 110, wherein the number of springs can be designed according to demand. In FIG. 12, the diaphragm 110 may include a first spring SPR1 directly connected between the first diaphragm sub-section 112 and the second diaphragm sub-section 114.

Due to the existence of the first spring SPR1, the success rate of manufacturing the diaphragm 110 can be improved, thereby improving the yield of the sound unit 400. In detail, in the step of removing the substrate SB and the adhesive layer AL, the displacement of the first diaphragm sub-portion 112 along the direction Z and the displacement of the second diaphragm sub-portion 114 along the direction Z are caused by the adhesive force of the adhesive layer AL. When the first diaphragm sub-portion 112 and the second diaphragm sub-portion 114 move along the direction Z and have a large displacement, the first spring SPR1 can limit the movement of the first diaphragm sub-portion 112 and the second diaphragm sub-portion 114, and provide a restoring force for the first diaphragm sub-portion 112 and the second diaphragm sub-portion 114, thereby reducing damage to the diaphragm 110.

The spring may have any suitable design according to the requirements. As shown in FIG. 12 , the first spring SPR1 may be formed by the slit SL. In the present embodiment, the first spring SPR1 shown in FIG. 12 may be formed by two first slits SL1 and two fifth slits SL5, wherein the fifth slit SL5 may be connected to the first slit SL1, and the fifth slit SL5 may have a curved pattern. For example, the fifth slit SL5 may include a hook-shaped curved pattern, and one end of the fifth slit SL5 is not connected to other slits SL, but the present invention is not limited thereto. For example, the two first slits SL1 may be parallel to each other, but the present invention is not limited thereto.

When the diaphragm 110 moves, stress caused by the deformation of the diaphragm 110 may be applied to the spring. In FIG. 12 , since the fifth slit SL5 includes a curved pattern (i.e., a hook-shaped curved pattern), the effect of stress concentration can be reduced, thereby reducing damage to the diaphragm 110 and the first spring SPR1, thereby improving the yield of the sound unit 400.

In addition, as shown in FIG. 12 , the connection direction from the first spring SPR1 to the first diaphragm sub-portion 112 may be different from the connection direction from the first spring SPR1 to the second diaphragm sub-portion 114. For example, in FIG. 12 , the connection direction from the first spring SPR1 to the first diaphragm sub-portion 112 may be opposite to the connection direction from the first spring SPR1 to the second diaphragm sub-portion 114, but the present invention is not limited thereto. For example, in FIG. 12 , the first spring SPR1 may be substantially in a straight line shape, but the present invention is not limited thereto.

Please refer to FIG. 13, which is a schematic top view of the sound unit of the fifth embodiment of the present invention. As shown in FIG. 13, the difference between this embodiment and the fourth embodiment lies in the design of the first spring SPR1. In FIG. 13, the first spring SPR1 of the diaphragm 110 of the sound unit 500 may be formed by two first slits SL1, two fifth slits SL5 and a sixth slit SL6, wherein the two fifth slits SL5 may be connected to the same first slit SL1, the sixth slit SL6 may be connected to another first slit SL1, the fifth slit SL5 may have two curved patterns and one straight pattern, and the sixth slit SL6 may be between the two fifth slits SL5 and have a curved pattern. For example, the fifth slit SL5 may include a hook-shaped curve pattern, and one end of the fifth slit SL5 is not connected to other slits SL, but is not limited thereto.

In addition, in the first spring SPR1 shown in FIG. 13 , the connection direction from the first spring SPR1 to the first diaphragm sub-section 112 may be the same as the connection direction from the first spring SPR1 to the second diaphragm sub-section 114, but not limited thereto. For example, in FIG. 13 , the first spring SPR1 may be substantially U-shaped, but not limited thereto. Due to this design, the size of the central opening between the first diaphragm sub-section 112 and the second diaphragm sub-section 114 may be reduced to reduce air leakage of the sound unit 500 during operation.

When the diaphragm 110 moves, stress caused by the deformation of the diaphragm 110 may be applied to the spring. In FIG. 13 , because of the design of the U-shaped first spring SPR1 with the curved slit SL, the stress concentration effect can be reduced, so that the damage on the diaphragm 110 and the first spring SPR1 is reduced, thereby improving the yield of the sound unit 500.

Please refer to FIG. 14 and FIG. 15. FIG. 14 is a schematic top view of the sound unit of the sixth embodiment of the present invention, and FIG. 15 is an enlarged schematic view of the structure in the region R3 of FIG. 14. As shown in FIG. 14 and FIG. 15, the difference between this embodiment and the first embodiment is that the diaphragm 110 of the sound unit 600 of this embodiment further includes a third diaphragm sub-portion 116 and a fourth diaphragm sub-portion 118. The third diaphragm sub-portion 116 and the fourth diaphragm sub-portion 118 can be arranged between the first diaphragm sub-portion 112 and the second diaphragm sub-portion 114 in a top view, and the third diaphragm sub-portion 116 and the fourth diaphragm sub-portion 118 can be opposite to each other in a top view. In other words, the third diaphragm sub-section 116 may be disposed on a first side (e.g., a left side) between the first diaphragm sub-section 112 and the second diaphragm sub-section 114 of the sound unit 600 in a plan view, and the fourth diaphragm sub-section 118 may be disposed on a second side (e.g., a right side) between the first diaphragm sub-section 112 and the second diaphragm sub-section 114 of the sound unit 600 in a plan view, and the first side and the second side of the sound unit 600 may be opposite to each other in a plan view.

In Figure 14, only one edge of the third diaphragm sub-section 116 can be anchored by connecting to the anchor structure 120, and only one edge of the fourth diaphragm sub-section 118 can be anchored by connecting to the anchor structure 120. The other edges of the third diaphragm sub-section 116 and the other edges of the fourth diaphragm sub-section 118 are non-anchored and not connected to the anchor structure 120. In other words, the third anchoring edge 116a of the third diaphragm sub-section 116 may be the only anchored edge in the third diaphragm sub-section 116, and the fourth anchoring edge 118a of the fourth diaphragm sub-section 118 may be the only anchored edge in the fourth diaphragm sub-section 118, wherein the third diaphragm sub-section 116 may be directly connected to the anchoring structure 120 only through the third anchoring edge 116a, and the fourth diaphragm sub-section 118 may be directly connected to the anchoring structure 120 only through the fourth anchoring edge 118a.

In FIG. 14, a second slit SL2 may be located between the first diaphragm sub-portion 112 and the third diaphragm sub-portion 116 to define a second non-anchored edge 112n2 of the first diaphragm sub-portion 112 and a fifth non-anchored edge 116n5 of the third diaphragm sub-portion 116, and another second slit SL2 may be located between the first diaphragm sub-portion 112 and the fourth diaphragm sub-portion 118 to define another second non-anchored edge 112n2 of the first diaphragm sub-portion 112 and a sixth non-anchored edge 118n5 of the fourth diaphragm sub-portion 118. n6, a third slit SL3 may be located between the second diaphragm sub-portion 114 and the third diaphragm sub-portion 116 to define a fourth non-anchored edge 114n4 of the second diaphragm sub-portion 114 and another fifth non-anchored edge 116n5 of the third diaphragm sub-portion 116, and another third slit SL3 may be located between the second diaphragm sub-portion 114 and the fourth diaphragm sub-portion 118 to define another fourth non-anchored edge 114n4 of the second diaphragm sub-portion 114 and another sixth non-anchored edge 118n6 of the fourth diaphragm sub-portion 118. In some embodiments, the fifth non-anchored edge 116n5 of the third diaphragm sub-portion 116 may be adjacent to the third anchored edge 116a of the third diaphragm sub-portion 116, and the sixth non-anchored edge 118n6 of the fourth diaphragm sub-portion 118 may be adjacent to the fourth anchored edge 118a of the fourth diaphragm sub-portion 118, but is not limited thereto.

As shown in Figure 14, the shape of the first diaphragm sub-section 112 and the shape of the second diaphragm sub-section 114 may be substantially trapezoidal, the shape of the third diaphragm sub-section 116 and the shape of the fourth diaphragm sub-section 118 may be substantially triangular, the first diaphragm sub-section 112 and the second diaphragm sub-section 114 may be substantially identical, and the third diaphragm sub-section 116 and the fourth diaphragm sub-section 118 may be substantially identical, but not limited to this.

During operation of the sound unit 600, the side openings are respectively located between the first diaphragm sub-portion 112 and the third diaphragm sub-portion 116, between the second diaphragm sub-portion 114 and the third diaphragm sub-portion 116, between the first diaphragm sub-portion 112 and the fourth diaphragm sub-portion 118, and between the second diaphragm sub-portion 114 and the fourth diaphragm sub-portion 118. The size of the side openings is related to the low frequency roll-off (LFRO) effect in the frequency response of the sound unit 600, wherein a strong low frequency roll-off effect may cause a significant decrease in the sound pressure level of the sound wave at low frequencies.

In detail, regarding the side opening of the sound unit 600, the acoustic impedance at low frequency may be based on the formula: R∝L/(b×d ³ ), where R is the acoustic impedance at low frequency, L is the thickness of the diaphragm 110 , b is the length of the second non-anchored edge 112n2 of the first diaphragm sub-portion 112 or the length of the fourth non-anchored edge 114n4 of the second diaphragm sub-portion 114 , and d is the maximum dimension of the side opening in the direction Z. If the acoustic impedance at low frequency is increased, air leakage (e.g., acoustic leakage) of the sound unit 600 during operation may be reduced to reduce the low-frequency roll-off effect in the frequency response of the sound unit 600 .

According to the above formula, when d (i.e., the maximum dimension of the side opening in the direction Z) is reduced, the acoustic impedance at low frequencies can be improved. In the first embodiment shown in FIG. 1 , with respect to the first diaphragm subsection 112, the maximum dimension of the side opening in the direction Z is the maximum distance in the direction Z between the second non-anchored edge 112n2 and the anchoring structure 120. In the sixth embodiment shown in FIG. 14 , with respect to the first diaphragm subsection 112, the maximum dimension of the side opening in the direction Z is the maximum distance in the direction Z between the second non-anchored edge 112n2 of the first diaphragm subsection 112 and the fifth non-anchored edge 116n5 of the third diaphragm subsection 116 (or the sixth non-anchored edge 118n6 of the fourth diaphragm subsection 118). In the sixth embodiment shown in FIG. 14 , due to the presence of the third diaphragm sub-portion 116 and the fourth diaphragm sub-portion 118 , during the operation of the sound unit 600 , d in the formula can be reduced by controlling the third diaphragm sub-portion 116 and the fourth diaphragm sub-portion 118 to approach the first diaphragm sub-portion 112 and the second diaphragm sub-portion 114 in the direction Z. That is, in FIG. 14 , the third diaphragm sub-portion 116 can be used to reduce the acoustic leakage on the first side (left side) of the sound unit 600 , and the fourth diaphragm sub-portion 118 can be used to reduce the acoustic leakage on the second side (right side) of the sound unit 600 .

The sound unit 600 may include at least one suitable structure to reduce d (i.e., the maximum size of the side opening in the direction Z), thereby increasing the acoustic resistance at low frequencies. In this embodiment, due to this suitable structure, during the operation of the sound unit 600, the fifth non-anchored edge 116n5 of the third diaphragm sub-portion 116 may be close to the second non-anchored edge 112n2 of the first diaphragm sub-portion 112 and the fourth non-anchored edge 114n4 of the second diaphragm sub-portion 114 in the direction Z, and the sixth non-anchored edge 118n6 of the fourth diaphragm sub-portion 118 may be close to the second non-anchored edge 112n2 of the first diaphragm sub-portion 112 and the fourth non-anchored edge 114n4 of the second diaphragm sub-portion 114 in the direction Z, respectively. Accordingly, during the operation of the sound unit 600, the size of the side opening can be reduced to increase the acoustic resistance at low frequencies, thereby reducing the low-frequency roll-off effect in the frequency response of the sound unit 600.

For example, in order to reduce d, the diaphragm 110 may include at least one spring connected between the sub-portions of the diaphragm 110, so that during the operation of the sound unit 600, the non-anchored edges of these sub-portions can be close to each other in the direction Z. As shown in FIG. 14, the diaphragm 110 may include at least one second spring SPR2 and at least one third spring SPR3, the second spring SPR2 may be directly connected between the first diaphragm sub-portion 112 and the third diaphragm sub-portion 116 or directly connected between the first diaphragm sub-portion 112 and the fourth diaphragm sub-portion 118, and the third spring SPR3 may be directly connected between the second diaphragm sub-portion 114 and the third diaphragm sub-portion 116 or directly connected between the second diaphragm sub-portion 114 and the fourth diaphragm sub-portion 118. In FIG. 14 , the diaphragm 110 may include two second springs SPR2 and two third springs SPR3. The two second springs SPR2 may be connected between the first diaphragm sub-portion 112 and the third diaphragm sub-portion 116, and between the first diaphragm sub-portion 112 and the fourth diaphragm sub-portion 118, respectively. The two third springs SPR3 may be connected between the second diaphragm sub-portion 114 and the third diaphragm sub-portion 116, and between the second diaphragm sub-portion 114 and the fourth diaphragm sub-portion 118, respectively, but the present invention is not limited thereto. It should be noted that the second springs SPR2 and the third springs SPR3 are formed by the slit SL (e.g., the slit SL other than the first slit SL1, the second slit SL2, and the third slit SL3).

In addition, in a spring shown in FIG. 14, the connection direction from the spring to one sub-section may be the same as the connection direction from the spring to another sub-section, but is not limited thereto. For example, in FIG. 14, the spring may be substantially U-shaped, but is not limited thereto. For example, a U-shaped spring may have a large curvature, but is not limited thereto. Due to this design, the size of the side opening between the two sub-sections may be reduced (i.e., d is reduced) to reduce air leakage of the sound unit 600 during operation, thereby reducing the low-frequency roll-off effect in the frequency response of the sound unit 600.

For example, in order to reduce d, the actuating layer 130 may be disposed on the first diaphragm sub-portion 112, the second diaphragm sub-portion 114, the third diaphragm sub-portion 116, and the fourth diaphragm sub-portion 118. During operation of the sound unit 600, the actuating layer 130 may actuate these sub-portions to move them along the direction Z, so that the non-anchored edges of these sub-portions may approach each other in the direction Z.

In addition, in the region R3 shown in FIG. 15 , the sound unit 600 may include a groove structure RS outside the diaphragm 110, wherein the groove structure RS may be directly connected to the slit segment SLs in the corner region CR of the diaphragm 110, and the groove structure RS may have a curved pattern (e.g., the groove structure RS may have a semicircular pattern). For example, in FIG. 15 , the slit segment SLs may be connected between one end of the second slit SL2 in the corner region CR and the groove structure RS, and the slit segment SLs may have a straight line pattern, but is not limited thereto. The existence of the curved groove structure RS connecting the slit segment SLs in the corner region CR may improve the success rate of the manufacturing process of the sound unit 600, thereby improving the yield of the sound unit 600.

Please refer to FIG. 16, which is a schematic top view of the sound unit of the seventh embodiment of the present invention. As shown in FIG. 16, the difference between this embodiment and the sixth embodiment lies in the design of the spring. In the sound unit 700 shown in FIG. 16, the fifth slit SL5 including the hook-shaped curve pattern and the straight line pattern can be respectively connected to the first slit SL1, the second slit SL2 or the third slit SL3, and the second spring SPR2 and the third spring SPR3 can be formed by the first slit SL1, the second slit SL2, the third slit SL3 and the fifth slit SL5, but not limited thereto. In addition, in FIG. 16, the spring can be substantially V-shaped, but not limited thereto.

Please refer to FIG. 17, which is a schematic top view of the sound unit of the eighth embodiment of the present invention. As shown in FIG. 17, the difference between this embodiment and the sixth embodiment is that the slit SL of the diaphragm 110 of the sound unit 800 further includes at least one side slit SLi formed on the third diaphragm sub-portion 116 and/or the fourth diaphragm sub-portion 118.

Due to the existence of the side slit SLi, the structural strength of the third diaphragm sub-section 116 and the fourth diaphragm sub-section 118 will be weakened, so that during the operation of the sound unit 800, the second spring SPR2 and the third spring SPR3 can pull up the third diaphragm sub-section 116 and the fourth diaphragm sub-section 118 so that their non-anchored edges are close to the non-anchored edges of the first diaphragm sub-section 112 and the second diaphragm sub-section 114 in the direction Z.

On the other hand, compared to a structure without the side slit SLi, the diaphragm 110 of the present embodiment can form a plurality of smaller openings during operation of the sound unit 800 to replace an original larger opening between two non-anchored edges of the two sub-parts, wherein at least one of the smaller openings can be formed between the two non-anchored edges, and at least one of the smaller openings can be formed through the side slit SLi. In other words, d of an original larger opening is converted into a plurality of d' of a plurality of smaller openings, and d' is less than d. For example, according to the above formula, if an original larger opening is replaced by three smaller openings, and the d of the original larger opening is three times the d' of the smaller opening, then the acoustic impedance of the three smaller openings is nine times the acoustic impedance of the original larger opening. Therefore, the acoustic impedance at low frequencies can be improved through this design.

As shown in FIG. 17 , the second spring SPR2 may be formed by the first slit SL1, the second slit SL2, the fifth slit SL5 and the side slit SL1, and the third spring SPR3 may be formed by the first slit SL1, the third slit SL3, the fifth slit SL5 and the side slit SL1, but not limited thereto.

In some embodiments, as shown in FIG. 17 , the actuating layer 130 may be disposed on the first diaphragm sub-section 112 and the second diaphragm sub-section 114 , but the actuating layer 130 may not be disposed on the third diaphragm sub-section 116 and the fourth diaphragm sub-section 118 (i.e., no actuating layer is disposed on the third diaphragm sub-section 116 and the fourth diaphragm sub-section 118 ), but is not limited thereto.

In addition, in Fig. 17, the diaphragm 110 may optionally include a first spring SPR1 directly connected between the first diaphragm sub-portion 112 and the second diaphragm sub-portion 114. For example, the first spring SPR1 shown in Fig. 17 may be formed by two first slits SL1 and two fifth slits SL5, but is not limited thereto.

Please refer to FIG. 18 and FIG. 19, FIG. 18 is a schematic top view of the sound unit of the ninth embodiment of the present invention, and FIG. 19 is a schematic side view of the sound unit of the ninth embodiment of the present invention, wherein FIG. 18 and FIG. 19 only illustrate the first diaphragm sub-portion 112, and the design of the second diaphragm sub-portion 114 may be similar to the design of the first diaphragm sub-portion 112. As shown in FIG. 18, the difference between this embodiment and the first embodiment lies in the design of the anchoring edge of the sub-portion of the diaphragm 110. In the sound unit 900 of the present embodiment, the anchoring edge of the sub-section of the diaphragm 110 is partially anchored, so that the anchoring edge includes at least one anchoring portion and at least one non-anchoring portion, wherein the anchoring portion of the anchoring edge is anchored, and the non-anchoring portion of the anchoring edge is non-anchored. For example, in FIG. 18, the partially anchored first anchoring edge 112a of the first diaphragm sub-section 112 may include two anchoring portions AP and a non-anchoring portion NP located between the two anchoring portions AP, but is not limited thereto. When the sound unit 900 operates (ie, the first diaphragm sub-portion 112 is actuated), the non-anchored portion NP of the first anchored edge 112a may move in the direction Z to increase the deformation of the diaphragm 110 , thereby increasing the sound pressure level of the sound waves generated by the sound unit 900 .

In order to make the anchoring edge have an anchoring portion AP and a non-anchoring portion NP, the slit SL of the diaphragm 110 may include at least one internal slit. In this embodiment, the first diaphragm sub-portion 112 may have at least one first internal slit SLn1 and at least one second internal slit SLn2, wherein the non-anchoring portion NP of the first anchoring edge 112a may be defined by the first internal slit SLn1, and the second internal slit SLn2 is connected to the first internal slit SLn1, so that the first anchoring edge 112a has an anchoring portion AP and a non-anchoring portion NP. In other words, the first inner slit SLn1 may be parallel to the first anchoring edge 112a and located between the first diaphragm sub-section 112 and the anchoring structure 120, and the second inner slit SLn2 may not be parallel to the first anchoring edge 112a. For example, in FIG. 18 , the first diaphragm sub-section 112 may have one first slit SL1 and two second slits SL2, and the second inner slit SLn2 may be a straight slit perpendicular to the first anchoring edge 112a, but is not limited thereto. For example, the second inner slit SLn2 may extend from the first anchoring edge 112a toward the first slit SL1, and the second inner slit SLn2 may not be connected to the first slit SL1.

The first inner slit SLn1 defining the non-anchoring portion NP of the first anchoring edge 112a may be connected between two slits SL. For example, in FIG. 18 , the first inner slit SLn1 may be connected between two second inner slits SLn2, so that the anchoring portion AP and the non-anchoring portion NP of the first anchoring edge 112a may be divided by the second inner slit SLn2, but the present invention is not limited thereto.

Alternatively, in FIG. 18 , the first inner slit SLn1 and the second inner slit SLn2 may be separated from the first slit SL1 , the second slit SL2 , and the third slit SL3 , but is not limited thereto.

As shown in FIG. 18 , the first diaphragm sub-portion 112 may be divided into a plurality of portions through the internal slit SL. For example, in FIG. 18 , the first diaphragm sub-portion 112 may be divided into three portions 912p1, 912p2, and 912p3, portions 912p1 and 912p3 may be located between the second slit SL2 and the second internal slit SLn2, and portion 912p2 may be located between two second internal slits SLn2. For example, in FIG. 18 , portions 912p1 and 912p3 may have an anchoring portion AP of a first anchoring edge 112a to be anchored to the anchoring structure 120. For example, in Figure 18, part 912p2 may have a non-anchored portion NP of the first anchoring edge 112a, so that part 912p2 can move along direction Z during the operation of the sound unit 900 and have a large displacement (compared to parts 912p1 and 912p3), thereby increasing the sound pressure level of the sound waves generated by the sound unit 900.

As shown in FIG. 18 , the actuating layer 130 may include three parts, which are respectively disposed at three portions 912p1, 912p2, and 912p3 of the first diaphragm sub-portion 112 to actuate the first diaphragm sub-portion 112.

In Figure 19, which shows a side view of the sound unit 900 during operation, part 912p2 can move along direction Z during the operation of the sound unit 900 and have a large displacement (compared to parts 912p1 and 912p3), and the non-anchor portion NP of the first anchor edge 112a can be higher than the anchor portion AP in direction Z.

Please refer to FIG. 20, which is a top view schematic diagram of the sound unit of the tenth embodiment of the present invention. As shown in FIG. 20, the difference between the embodiment and the ninth embodiment lies in the design of the anchoring edge of the sub-portion of the diaphragm 110. In the sound unit 900' shown in FIG. 20, the first anchoring edge 112a of the first diaphragm sub-portion 112 may include two non-anchoring portions NP and an anchoring portion AP located between the two non-anchoring portions NP, but not limited to this. In FIG. 20, the first diaphragm sub-portion 112 may have two first internal slits SLn1 and two second internal slits SLn2, and the first internal slit SLn1 may be connected between the second internal slit SLn2 and the second slit SL2, but not limited to this.

In FIG. 20, portion 912p2 may have an anchoring portion AP of a first anchoring edge 112a to be anchored to the anchoring structure 120. In FIG. 20, portion 912p1 and portion 912p3 may have a non-anchoring portion NP of the first anchoring edge 112a, so that portion 912p1 and portion 912p3 can move along direction Z during operation of the sound unit 900' and have a large displacement (compared to portion 912p2), thereby increasing the sound pressure level of the sound waves generated by the sound unit 900'.

In the following, the detailed contents of the package structure PKG of the sound unit SPC will be further exemplified. It should be noted that the package structure PKG is not limited to the embodiments provided below, and the package structure PKG may have a sound unit SPC of an embodiment that does not violate the spirit of the invention (e.g., one of the above embodiments or a combination of the above embodiments).

Please refer to Figures 21 to 23, Figure 21 is a schematic diagram of a packaging structure of an embodiment of the present invention, Figure 22 is a schematic diagram of a bottom view of the packaging structure shown in Figure 21, and Figure 23 is a schematic diagram of a cross-sectional view of the packaging structure shown in Figure 21. As shown in Figures 21 to 23, the packaging structure PKG of the sound unit SPC of the present invention includes a base BS, a shell HS disposed on the base BS, and the above-mentioned sound unit SPC disposed in the shell HS, wherein the sound unit SPC is located between the base BS and the shell HS.

The substrate BS may be a hard substrate or a flexible substrate and may include any suitable material. For example, the substrate BS may include silicon, germanium, glass, plastic, quartz, sapphire, metal, polymer (e.g., polyimide, polyethylene terephthalate), any suitable material or a combination thereof. In an example shown in FIGS. 21 to 23 , the substrate BS may be a circuit board including a laminated board (e.g., a copper foil substrate), a planar grid array board, or any other suitable board containing a conductive material, so that the substrate BS may include one or more conductive elements (e.g., connecting traces, active elements, passive elements, and/or connecting pads), but is not limited thereto. For example, in Figure 22, the base BS has at least one conductive layer CDB, and the sound unit SPC and the conductive layer CDB are arranged on opposite sides of the base BS, wherein the conductive layer CDB includes a plurality of conductive pads CPC and a conductive ring CRC, and the conductive pads CPC are used to electrically connect between the sound unit SPC and an external device outside the package structure PKG.

The base BS may be substantially parallel to the direction X and the direction Y (ie, the normal direction of the base BS may be substantially parallel to the direction Z), but the present invention is not limited thereto. For example, in FIGS. 21 to 23 , the base BS may be substantially parallel to the diaphragm 110 of the sound unit SPC, but the present invention is not limited thereto.

The housing HS may include a top structure TS and at least one side wall SW, wherein the side wall SW is located between the base BS and the top structure TS. In some embodiments, the base BS and the top structure TS may be substantially parallel to each other. For example, in Figures 21 to 23, the top structure TS may be substantially parallel to the direction X and the direction Y (that is, the normal direction of the top structure TS may be substantially parallel to the direction Z), and the side wall SW may be substantially parallel to the direction Z, but is not limited thereto. For example, in Figures 21 to 23, the top structure TS may be substantially parallel to the diaphragm 110 of the sound unit SPC, and the side wall SW may surround the sound unit SPC, but is not limited thereto.

The top structure TS and the side wall SW may be rigid or flexible and may include any suitable material. For example, the top structure TS and the side wall SW may each include silicon, germanium, glass, plastic, quartz, sapphire, metal, polymer (e.g., polyimide, polyethylene terephthalate), any suitable material or combination thereof. In an example shown in FIGS. 21 to 23 , the top structure TS and the side wall SW may include metal and be formed as an integrally formed structure (e.g., a cover), but is not limited thereto.

As shown in FIGS. 21 to 23, the sound unit SPC is disposed on the base BS, and the cavity CV in the housing HS can be divided into two sub-cavities (i.e., a first sub-cavity CV1 and a second sub-cavity CV2) by the diaphragm 110 of the sound unit SPC, wherein the diaphragm 110 is located between the two sub-cavities. The first sub-cavity CV1 may be between the diaphragm 110 and the top structure TS, and the second sub-cavity CV2 may be between the diaphragm 110 and the base BS.

In addition, in FIGS. 21 to 23, at least one first cover opening OP1 and at least one second cover opening OP2 may be formed on the cover HS or the base BS, respectively, wherein the first cover opening OP1 may be connected to the first sub-cavity CV1, and the second cover opening OP2 may be connected to the second sub-cavity CV2. For example, the first cover opening OP1 may be a sound outlet, but not limited thereto. For example, as shown in FIGS. 21 to 23, the first cover opening OP1 may be formed on the top structure TS, and the second cover opening OP2 may be formed on the base BS, but not limited thereto.

The number and arrangement of the first housing cover openings OP1 and the number and arrangement of the second housing cover openings OP2 can be designed according to requirements.

In some embodiments, a first shell opening OP1 and/or a second shell opening OP2 may correspond to the area in the package structure PKG where the sound wave with the highest SPL is generated from the sound unit SPC. For example (such as Figures 21 to 23), a first shell opening OP1 may be located at the center of the top structure TS in a top view (or may be located at the center of the side wall SW in a side view), and/or a second shell opening OP2 may be located at the center of the base BS in a top view, but is not limited thereto. For example, a first shell opening OP1 and/or a second shell opening OP2 may correspond to the center of the diaphragm 110 in the normal direction of the base BS (i.e., direction Z), but is not limited thereto. For example, each diaphragm 110 may correspond to at least one first housing opening OP1 and/or at least one second housing opening OP2.

For example (e.g., FIG. 27 ), if the shell cover HS includes a plurality of first shell cover openings OP1 (or a plurality of second shell cover openings OP2), the first shell cover openings OP1 (or the second shell cover openings OP2) may be arranged in a plurality of rows extending in one direction (e.g., direction X) and/or in a plurality of columns extending in another direction (e.g., direction Y), but the present invention is not limited thereto. For example, if the shell cover HS includes a plurality of first shell cover openings OP1 (or a plurality of second shell cover openings OP2), the first shell cover openings OP1 (or the second shell cover openings OP2) may be arranged in a matrix, but the present invention is not limited thereto.

The top view pattern of the first housing cover opening OP1 and the top view pattern of the second housing cover opening OP2 can be designed according to the requirements. For example, the top view pattern of the housing cover opening can be a polygon (such as a rectangle, a hexagon, etc.), a circle or other suitable shapes.

The size of the first shell opening OP1 and the size of the second shell opening OP2 can be designed according to the requirements, wherein the protective effect of the shell cover HS increases as the size of the sound outlet (e.g., the first shell opening OP1) decreases, and the acoustic resistance of the shell cover HS decreases as the total area of the sound outlet (e.g., the first shell opening OP1) increases. Therefore, in some embodiments, the size of the sound outlet (e.g., the first shell opening OP1) can decrease as the number of sound outlets increases, so that the shell cover HS has a high protective effect and low acoustic resistance.

The sound unit SPC can be electrically connected to an external device in any suitable manner. For example, in FIGS. 21 to 23 , the sound unit SPC can be electrically connected to an external device through a conductive element (eg, conductive pad CPC) of the substrate BS, but the present invention is not limited thereto.

In the present invention, the sound unit SPC can be electrically connected to the controller, wherein the controller can be used to generate a driving signal, and the driving signal can be applied to the actuating layer 130 to actuate the diaphragm 110. The controller can be disposed inside the packaging structure PKG or outside the packaging structure PKG.

The method of forming the package structure PKG may be any suitable forming method. In the forming method of some embodiments, a shell cover HS and a base BS may be provided, and the sound unit SPC may be manufactured by the method described above. Then, the sound unit SPC is disposed on the base BS and disposed in the shell cover HS. For example, before the shell cover HS is disposed on the base BS, the sound unit SPC is disposed on the base BS, but not limited thereto. For example, before the sound unit SPC is disposed on the base BS, a second shell cover opening OP2 is formed on the base BS; before the sound unit SPC is disposed in the shell cover HS, a first shell cover opening OP1 is formed on the shell cover HS, but not limited thereto.

Please refer to FIG. 24, which is a schematic diagram of a packaging structure of an embodiment of the present invention. As shown in FIG. 24, the first housing opening OP1 may not be located at the center of the top structure TS in a top view, but the present invention is not limited thereto. As shown in FIG. 24, the first housing opening OP1 may correspond to the center of the diaphragm 110 in the normal direction (i.e., direction Z) of the base BS, but the present invention is not limited thereto.

Please refer to Figures 25 and 26, Figure 25 is a schematic diagram of a package structure of an embodiment of the present invention, and Figure 26 is a cross-sectional schematic diagram of the package structure shown in Figure 25. As shown in Figures 25 and 26, the first housing opening OP1 can be formed on the side wall SW of the housing HS, but is not limited thereto.

Please refer to FIG. 27 and FIG. 28, FIG. 27 is a schematic diagram of a package structure of an embodiment of the present invention, and FIG. 28 is a cross-sectional schematic diagram of the package structure shown in FIG. 27. As shown in FIG. 27 and FIG. 28, the top structure TS (or the side wall SW) of the shell HS of the package structure PKG may have a plurality of first shell openings OP1, and the first shell openings OP1 may be small or quite small. For example, the size of the first shell opening OP1 may be less than or equal to 10%, 5%, 3% or 1% of the top structure TS of the shell HS, but is not limited thereto.

Since the top structure TS has a plurality of first shell cover openings OP1 of small size, the top structure TS of the present invention can provide a high physical protection effect for the sound unit SPC with low acoustic resistance. For example, the top structure TS of the present invention can protect the sound unit SPC in the subsequent use of the packaging structure PKG (e.g., in the operation of the sound unit SPC, in the process of setting the packaging structure PKG in the equipment) to improve the yield of the packaging structure PKG and the yield of the equipment, but not limited to this. In addition, due to the presence of the top structure TS containing a plurality of first shell cover openings OP1, it is difficult for external objects (e.g., dust, particles, sharp objects, etc.) to enter the packaging structure PKG.

Before the sound unit SPC is set in the packaging structure PKG, the diaphragm 110 of the sound unit SPC has a first frequency response, wherein the minimum resonance peak of the diaphragm 110 is generated at a first frequency (i.e., the first frequency is the minimum resonance frequency of the diaphragm 110) and has a first peak value (i.e., SPL). After the sound unit SPC is set in the packaging structure PKG, the diaphragm 110 of the sound unit SPC has a second frequency response, wherein the minimum resonance peak of the diaphragm 110 is generated at a second frequency (i.e., the second frequency is the minimum resonance frequency of the diaphragm 110) and has a second peak value (i.e., SPL). In some embodiments, the first frequency is greater than the second frequency, and/or the first peak value is greater than the second peak value.

In the second frequency response of the diaphragm 110, the second frequency (i.e., the minimum resonance frequency) and the second peak value (i.e., the peak value of the minimum resonance peak) decrease as the total area of the first housing opening OP1 decreases. In some embodiments, the difference between the first frequency and the second frequency may be greater than or equal to 1000 Hz, 2000 Hz, 5000 Hz, or other suitable values. Therefore, in the package structure PKG, the minimum resonance frequency and the peak value of the minimum resonance peak of the diaphragm 110 can be changed by adjusting the total area of the first housing opening OP1.

In the following, the details of the device APT including the aforementioned sound unit SPC will be further exemplified, wherein the device APT may be an earphone, a headphone, an earbud or other suitable sound generating device. It should be noted that the device APT is not limited to the exemplary embodiments provided below, and the device APT may have a sound unit SPC of an embodiment that does not violate the spirit of the invention (e.g., one of the above embodiments or a combination of the above embodiments).

Please refer to FIG. 29, which is a cross-sectional schematic diagram of a device according to an embodiment of the present invention. As shown in FIG. 29, the device APT may include a housing OC, a packaging structure PKG of a sound unit SPC, and a device base BS_AS, wherein the packaging structure PKG may be arranged on the device base BS_AS and located in the housing OC. It should be noted that the packaging structure PKG of the sound unit SPC may be one of the above-mentioned embodiments or a combination of the above-mentioned embodiments.

The device substrate BS_AS may include silicon, germanium, glass, plastic, quartz, sapphire, metal, polymer (e.g., polyimide, polyethylene terephthalate), any suitable material or combination thereof. In an example shown in FIG. 29 , the device substrate BS_AS may be a circuit board including a laminate board (e.g., a copper foil substrate), a planar grid array board, or any other suitable board containing a conductive material, so that the device substrate BS_AS may include one or more conductive elements (e.g., connection traces, active elements, passive elements, and/or connection pads), but is not limited thereto.

As shown in FIG. 29 , the device substrate BS_AS may have at least one device substrate opening BS_Asp, and the second sub-cavity CV2 of the package structure PKG may be connected to the device substrate opening BS_Asp of the device substrate BS_AS through the second cover opening OP2 of the package structure PKG.

As shown in FIG. 29 , the outer casing OC may have at least one outlet opening OCp, and the first sub-cavity CV1 of the package structure PKG may be connected to the outside of the front side of the device APT through the first cover opening OP1 of the package structure PKG and the outlet opening OCp of the outer casing OC.

Optionally, the outer shell OC of the present embodiment may clamp the device substrate BS_AS and the package structure PKG (e.g., the outer shell OC may contact the side wall of the device substrate BS_AS and the side wall of the package structure PKG) to fix the device substrate BS_AS and the package structure PKG, and separate the first sub-cavity CV1 and the second sub-cavity CV2 from each other in the device APT, but not limited thereto. Optionally, the device APT may further include a gasket, wherein the gasket may be disposed between the package structure PKG and the outer shell OC, and the gasket may surround the outflow opening OCp, but not limited thereto.

In FIG. 29 , the package structure PKG can be assembled into the device APT through surface mounting technology, wherein a conductive adhesive layer CAL (e.g., comprising solder) is disposed between the device substrate BS_AS and the substrate BS of the package structure PKG through surface mounting technology so that the package structure PKG is disposed on the device substrate BS_AS.

In the present invention, since surface mounting technology is used, the package structure PKG including the sound unit SPC may need to be designed to withstand the highest process temperature of the surface mounting technology. Therefore, the package structure PKG has a heat resistance temperature whose upper limit is higher than the highest process temperature of the surface mounting technology, so that after the surface mounting technology is executed, the package structure PKG will not fail, and the package structure PKG can maintain normal operation (that is, sound waves can be generated normally). In some embodiments, the highest process temperature of the surface mounting technology can range from 240°C to 250°C, therefore, the upper limit of the heat resistance temperature of the package structure PKG can be greater than 240°C or greater than 250°C, but is not limited thereto. In addition, in some embodiments, each material contained in the package structure PKG has a heat resistance temperature whose upper limit is higher than the highest process temperature of the surface mount technology to ensure that the package structure PKG will not be damaged during the surface mount technology. For example, each material contained in the package structure PKG may have a heat resistance temperature whose upper limit is greater than 240°C or greater than 250°C, but is not limited thereto.

The following will explain the content of surface mount technology. The surface mount technology described below is only an example, and in order to make the surface mount technology clearer, some steps are omitted.

In the process of surface mount technology, a device substrate BS_AS having at least one conductive pad BS_ASc, at least one conductive trace and a device substrate opening BS_Asp is first provided, wherein the conductive pad BS_ASc and the device substrate opening BS_ASp can be formed before performing the surface mount technology. Then, a conductive adhesive layer CAL is set on the conductive pad BS_ASc of the device substrate BS_AS. For example, the conductive adhesive layer CAL can be printed on the device substrate BS_AS, but is not limited to this. Then, an electronic component, such as a packaging structure PKG of a sound unit SPC, is placed on the conductive adhesive layer CAL and in contact with the conductive adhesive layer CAL, wherein the conductive pad CPC of the packaging structure PKG is in contact with the conductive adhesive layer CAL. Next, a temperature raising step (e.g., a reflow step) is performed to raise the process temperature so that the conductive adhesive layer CAL melts and adheres to the conductive pad BS_ASc of the device substrate BS_AS and the conductive pad CPC of the package structure PKG. Therefore, by using surface mounting technology, the package structure PKG can be set on the device substrate BS_AS and electrically connected to the conductive pad BS_ASc through the conductive adhesive layer CAL.

In a conventional speaker or a conventional sound-generating device, since some components (such as rubber suspension and/or adhesive material bonded to the coil) cannot withstand the high process temperature of the surface mounting technology, the surface mounting technology cannot be used in the conventional speaker (or conventional sound-generating device). In contrast, in the present invention, since the package structure PKG is designed to withstand the highest process temperature of the surface mounting technology, the package structure PKG will not fail after the surface mounting technology is performed, and the package structure PKG can operate normally. In addition, since the present invention uses the surface mounting technology, it is not necessary to perform the wire bonding method/process (a method/process that uses wires to electrically connect between electronic components and the device substrate BS_AS), so that the lateral size of the device APT is significantly reduced.

The method of forming the device APT may be any suitable forming method. In the forming method of the device APT of some embodiments, the package structure PKG may be formed by the above method. Then, the package structure PKG may be assembled into the device APT including the outer shell OC by surface mounting technology. For example, the package structure PKG may be set on the device substrate BS_AS of the device APT by surface mounting technology.

Please refer to Figure 30, which is a schematic diagram of a device according to an embodiment of the present invention. As shown in Figure 30, the device APT of this embodiment may include a packaging structure PKG of a sound unit SPC and two ventilation devices VD, and these components are all arranged in an outer shell OC.

The ventilation device VD is used to form or close the vent, wherein when the vent is formed, the inner cavity CVi of the device APT is connected to the environment outside the device APT through the vent. As shown in FIG. 30, the ventilation device VD may include a ventilation substrate ST_V, a cover structure CS_V and a membrane structure TF_V, wherein the ventilation substrate ST_V has at least one substrate opening OPV, the cover structure CS_V is arranged on the ventilation substrate ST_V, and the membrane structure TF_V is arranged between the ventilation substrate ST_V and the cover structure CS_V, wherein the membrane structure TF_V is used to be actuated to form or close the vent, the cover structure CS_V is used to cover and protect the membrane structure TF_V, and the cover structure CS_V has at least one cover opening (not shown). When the vent is formed by the membrane structure TF_V, the air flow can pass through the cover opening of the covering structure CS_V, the vent and the substrate opening OPV of the ventilation substrate ST_V to connect the inner cavity CVi of the device APT to the environment outside the device APT.

The ventilation device VD can be used to suppress the occlusion effect during the operation of the sound unit SPC. The occlusion effect is caused by the sealed volume of the ear canal to cause a larger perceptible sound pressure to the user (i.e., the listener). In some cases, when the user performs certain movements (such as walking, running, talking, chewing, touching the acoustic energy transducer, etc.) while using the device APT inserted into the ear canal to generate bone-conducted sound, the occlusion effect will occur, and the occlusion effect causes the user to hear occlusion noise, thereby reducing the user's listening quality. In this embodiment, the ventilation device VD can form or close the vent in response to the occurrence and disappearance of the occlusion effect. When the closing effect occurs, the vent of the vent device VD can be formed so that the volume of the ear canal is not sealed to suppress the closing effect. When the closing effect does not occur, the vent of the vent device VD is closed to improve the quality of the sound waves generated by the device APT. Therefore, due to the presence of the vent device VD, the performance of the device APT and the user's experience of using the device APT can be improved.

In the embodiment shown in FIG. 30 , the two ventilation devices VD may be symmetrically arranged, but the present invention is not limited thereto. In one embodiment, the ventilation device VD may be a MEMS device or a package structure containing a MEMS structure.

In one embodiment, the device APT may further include a sensing device, and the vent of the ventilation device VD may be formed or closed accordingly based on the sensing result generated by the sensing device. For example, the sensing device may include a motion sensor, a force sensor, a light sensor, an accelerometer, a pressure sensor, an altitude sensor, a distance sensor, or a combination thereof.

The ventilation device VD, the packaging structure PKG and the sensing device can be coupled to a controller, and the controller can generate a signal to control the ventilation device VD, the packaging structure PKG and the sensing device.

The details and variations of the ventilation device, controller and sensing device are described in U.S. Patent Application Nos. 17/344,980, 17/344,983, 17/842,810 and 18/172,346, the entire disclosures of which are incorporated herein by reference and become part of the specification of the present invention.

In the present invention, a unit having a function different from that of the sound unit may also have the structure of a sound unit of one of the above-mentioned embodiments or a combination of the above-mentioned embodiments. Therefore, the manufacturing method of this unit may refer to the manufacturing method of the above-mentioned sound unit, the structure and forming method of the packaging structure including this unit may refer to the structure and forming method of the packaging structure of the above-mentioned sound unit, and the structure and forming method of the device including this unit (or including the packaging structure including this unit) may refer to the structure and forming method of the above-mentioned device including the sound unit (or including the packaging structure including the sound unit).

In some embodiments, the unit disposed in the package structure of the present invention may have an acoustic function different from that of the sound unit. In some embodiments, the unit disposed in the package structure of the present invention may be a ventilation unit in a ventilation device, which suppresses the locking effect during the operation of the sound unit by forming or closing its vent. For example, in a variation of the device APT shown in FIG. 30, the ventilation device VD as a packaging structure may include a ventilation unit having the above-mentioned structure (i.e., the structure of one of the embodiments shown in FIGS. 1 to 20 or a structure of a combination), so that the design of the ventilation unit or the design of the membrane structure TF_V may refer to one of the embodiments shown in FIGS. 1 to 20 (e.g., FIG. 11) or a combination, and the design of the covering structure CS_V may refer to one of the embodiments shown in FIGS. 21 to 28 (e.g., FIGS. 21 to 23) or a combination. It should be noted that in this variation, the sound unit SPC may include the structure described in the present invention or other suitable structures.

In summary, according to the design of the sound unit and the ventilation unit of the present invention, the sound unit and the ventilation unit can achieve a higher resonance frequency, a larger sound pressure level, a high yield and/or low air leakage. In addition, some units with different functions from the sound unit can refer to the sound unit of the present invention. The above is only a preferred embodiment of the present invention. All equal changes and modifications made according to the scope of the patent application of the present invention should be within the scope of the present invention.

100,200,300,400,500,600,700,800,900,900’,SPC: sound unit 110: diaphragm 112: first diaphragm subsection 112a: first anchoring edge 112n1: first non-anchoring edge 112n2: second non-anchoring edge 114: second diaphragm subsection 114a: second anchoring edge 114n3: third non-anchoring edge 114n4: fourth non-anchoring edge 116: third diaphragm subsection 116a: third anchoring edge 116n5: fifth non-anchoring edge 118: fourth diaphragm subsection 118a: fourth anchor edge 118n6: sixth non-anchor edge 120: anchor structure 130: actuation layer 310: latch structure 312: first latch element 314: second latch element 912p1, 912p2, 912p3: part AL: adhesive layer AM: actuation material AP: anchoring part APT: device BS: substrate BS_AS: device substrate BS_ASc, CPC: conductive pad BS_ASp: device substrate opening CAL: conductive adhesive layer CDB: conductive layer CPS: compensating oxide layer CR: corner area CRC: conductive ring CS_V: cover structure CT1: First conductive layer CT2: Second conductive layer CV: Cavity CV1: First sub-cavity CV2: Second sub-cavity CVi: Inner cavity HS: Shell NP: Non-anchored part OC: Outer shell OCp: Outflow opening OP1: First shell opening OP2: Second shell opening OPV: Substrate opening PKG: Package structure R1, R2, R3: Region RS: Groove structure SB: Substrate SIL: Isolation insulation layer SL: Slit SL1: First slit SL2: Second slit SL3: Third slit SL4, SL4’: Fourth slit SL5: Fifth slit SL6: Sixth slit SLi: Side slit SLn1: First inner slit SLn2: Second inner slit SLs: Slit segment SPR1: First spring SPR2: Second spring SPR3: Third spring ST_V: Ventilation substrate SW: Side wall TF_V: Membrane structure TL: Trench line TS: Top structure VD: Ventilation device WF: Wafer WL1: First layer WL1a: Top surface WL2: Second layer WL3: Insulation layer X,Y,Z: Direction

FIG. 1 is a schematic diagram of a top view of a sound unit of the first embodiment of the present invention. FIG. 2 is an enlarged schematic diagram of the structure in region R1 of FIG. 1. FIG. 3 to FIG. 8 are schematic diagrams of the structure of the sound unit of the first embodiment of the present invention at different stages of the manufacturing method. FIG. 9 is a schematic diagram of a top view of a sound unit of the second embodiment of the present invention. FIG. 10 is an enlarged schematic diagram of the structure in region R2 of FIG. 9. FIG. 11 is a schematic diagram of a top view of a sound unit of the third embodiment of the present invention. FIG. 12 is a schematic diagram of a top view of a sound unit of the fourth embodiment of the present invention. FIG. 13 is a schematic diagram of a top view of a sound unit of the fifth embodiment of the present invention. FIG. 14 is a schematic diagram of a top view of a sound unit of the sixth embodiment of the present invention. FIG. 15 is an enlarged schematic diagram of the structure in the region R3 of FIG. 14. FIG. 16 is a schematic diagram of a top view of the sound unit of the seventh embodiment of the present invention. FIG. 17 is a schematic diagram of a top view of the sound unit of the eighth embodiment of the present invention. FIG. 18 is a schematic diagram of a top view of the sound unit of the ninth embodiment of the present invention. FIG. 19 is a schematic diagram of a side view of the sound unit of the ninth embodiment of the present invention. FIG. 20 is a schematic diagram of a top view of the sound unit of the tenth embodiment of the present invention. FIG. 21 is a schematic diagram of a package structure of an embodiment of the present invention. FIG. 22 is a schematic diagram of a bottom view of the package structure shown in FIG. 21. FIG. 23 is a schematic diagram of a cross-section of the package structure shown in FIG. 21. FIG. 24 is a schematic diagram of a package structure of an embodiment of the present invention. FIG. 25 is a schematic diagram of a package structure of an embodiment of the present invention. FIG. 26 is a schematic diagram of a cross-section of the package structure shown in FIG. 25. FIG. 27 is a schematic diagram of a package structure of an embodiment of the present invention. FIG. 28 is a schematic diagram of a cross-section of the package structure shown in FIG. 27. FIG. 29 is a schematic diagram of a cross-section of a device of an embodiment of the present invention. FIG. 30 is a schematic diagram of a device of an embodiment of the present invention.

100: Voice unit

110: Diaphragm

112: First diaphragm subsection

112a: First anchor edge

112n1: First non-anchored edge

112n2: Second non-anchored edge

114: Second diaphragm subsection

114a: Second anchor edge

114n3: The third non-anchored edge

114n4: The fourth non-anchored edge

120: Anchor structure

130: Actuation layer

R1: Region

SL: Slit

SL1: First narrow seam

SL2: Second narrow seam

SL3: The third narrow seam

X,Y,Z: Direction

Claims (53)

A packaging structure, comprising: a housing; and a unit, arranged in the housing, the unit comprising: a diaphragm, comprising a first diaphragm sub-portion and a second diaphragm sub-portion, wherein the first diaphragm sub-portion and the second diaphragm sub-portion are opposite to each other in a top view along a top view direction, so that the first diaphragm sub-portion and the second diaphragm sub-portion are opposite to each other in a first direction perpendicular to the top view direction; an actuator layer, arranged on the first diaphragm sub-portion and the second diaphragm sub-portion in the top view direction; and an anchoring structure, wherein the diaphragm is anchored to the anchoring structure; Wherein the first diaphragm sub-section includes a first anchoring edge, the first anchoring edge is completely or partially connected to the anchoring structure to be completely or partially anchored by the anchoring structure, and the edges of the first diaphragm sub-section except the first anchoring edge are all non-anchored; Wherein the second diaphragm sub-section includes a second anchoring edge, the second anchoring edge is completely or partially connected to the anchoring structure to be completely or partially anchored by the anchoring structure, and the edges of the second diaphragm sub-section except the second anchoring edge are all non-anchored. A packaging structure as described in claim 1, wherein the shell cover includes a top structure and a side wall, the top structure is substantially parallel to the diaphragm, and a first shell cover opening is formed on the top structure. A packaging structure as described in claim 1, wherein the shell cover includes a top structure and a side wall, and a first shell cover opening is formed on the side wall. A packaging structure as described in claim 1, wherein the shell cover includes a top structure and a side wall, the top structure is substantially parallel to the diaphragm, and a plurality of first shell cover openings are formed on the top structure. A packaging structure as described in claim 1, wherein a first ratio of the diaphragm is greater than 2, and the first ratio of the diaphragm is the ratio of a first length of a first side of the diaphragm in a top view to a second length of a second side of the diaphragm in a top view. The packaging structure as described in claim 1, wherein the diaphragm includes: a first slit formed between the first diaphragm sub-portion and the second diaphragm sub-portion in the first direction, wherein a first non-anchored edge of the first diaphragm sub-portion is defined by the first slit, and the first non-anchored edge is opposite to the first anchored edge in the first direction; and a second slit, wherein a second non-anchored edge of the first diaphragm sub-portion is defined by the second slit, and the second non-anchored edge is adjacent to the first anchored edge. The packaging structure as described in claim 1 further includes a groove structure disposed at a corner of the unit, wherein the groove structure is used to disperse the stress applied to the groove structure during a peeling process. The packaging structure as described in claim 1 further includes four groove structures, which are respectively arranged at the four corners of the unit, and the groove structures are used to disperse the stress applied to the groove structures during a peeling process. The packaging structure as described in claim 1, wherein the diaphragm includes a latch structure for limiting the movement distance of the first diaphragm sub-section and the second diaphragm sub-section; wherein the movement distance is the distance along a normal direction of a substrate on which the unit is disposed. A packaging structure as described in claim 1, wherein the diaphragm also includes a first spring directly connected between the first diaphragm sub-portion and the second diaphragm sub-portion. The packaging structure as described in claim 1, wherein the diaphragm includes: A third diaphragm sub-section, which is arranged on a first side between the first diaphragm sub-section and the second diaphragm sub-section in the unit in a plan view; wherein the third diaphragm sub-section is used to reduce acoustic leakage on the first side of the unit; wherein the third diaphragm sub-section includes a third anchoring edge, the third anchoring edge is anchored, and the edges of the third diaphragm sub-section except the third anchoring edge are all non-anchored. The packaging structure as described in claim 1, wherein the first anchoring edge is partially anchored; wherein the first anchoring edge includes at least one anchoring portion and at least one non-anchoring portion, the at least one anchoring portion is anchored, and the at least one non-anchoring portion is non-anchored; wherein when the first diaphragm sub-portion is actuated, the at least one non-anchoring portion of the first anchoring edge moves toward a normal direction of a substrate on which the unit is disposed. A device comprising: a housing; and a packaging structure as described in claim 1. A device as described in claim 13, wherein the device is an earphone, a headphone or an earbud. A method for forming a packaging structure, comprising: Performing a manufacturing method to manufacture a unit, the manufacturing method comprising: Providing a wafer, wherein the wafer comprises a first layer and a second layer; and Patterning the first layer of the wafer to form at least one channel line; and Placing the unit in a shell cover; Wherein the first layer comprises a diaphragm, the diaphragm is anchored to an anchoring structure of the unit, and at least one slit is formed in the diaphragm due to the at least one channel line and penetrates the diaphragm; Wherein the diaphragm comprises a first diaphragm sub-portion and a second diaphragm sub-portion, the first diaphragm sub-portion and the second diaphragm sub-portion are opposite to each other in a top view along a top view direction, so that the first diaphragm sub-portion and the second diaphragm sub-portion are opposite to each other in a first direction perpendicular to the top view direction; Wherein the first diaphragm sub-section includes a first anchoring edge, the first anchoring edge is completely or partially connected to the anchoring structure to be completely or partially anchored by the anchoring structure, and the edges of the first diaphragm sub-section except the first anchoring edge are all non-anchored; Wherein the second diaphragm sub-section includes a second anchoring edge, the second anchoring edge is completely or partially connected to the anchoring structure to be completely or partially anchored by the anchoring structure, and the edges of the second diaphragm sub-section except the second anchoring edge are all non-anchored. The formation method of claim 15 further comprises: Before placing the unit in the housing, forming a first housing opening on the housing; wherein the housing comprises a top structure and a side wall, the top structure is substantially parallel to the diaphragm, and the first housing opening is formed on the top structure. The formation method of claim 15 further comprises: Before placing the unit in the housing, forming a first housing opening on the housing; wherein the housing comprises a top structure and a side wall, and the first housing opening is formed on the side wall. The formation method of claim 15 further comprises: Before placing the unit in the housing, forming a plurality of first housing openings on the housing; wherein the housing comprises a top structure and a side wall, the top structure is substantially parallel to the diaphragm, and the first housing openings are formed on the top structure. As in the formation method of claim 15, the manufacturing method of the unit further comprises: forming a groove structure at a corner of the unit. As in the formation method of claim 15, the manufacturing method of the unit further comprises: forming a latch structure to limit the movement distance of the first diaphragm sub-section and the second diaphragm sub-section; wherein the movement distance is the distance along a normal direction of a substrate on which the unit is disposed. As in the formation method of claim 15, the manufacturing method of the unit further comprises: forming a spring between the first diaphragm sub-section and the second diaphragm sub-section. The formation method of claim 15, wherein the manufacturing method of the unit further comprises: Patterning the first layer of the wafer so that the diaphragm further comprises a third diaphragm sub-section and a fourth diaphragm sub-section; wherein the third diaphragm sub-section is used to reduce acoustic leakage on a first side of the unit; wherein the fourth diaphragm sub-section is used to reduce acoustic leakage on a second side of the unit. The formation method of claim 15, wherein the manufacturing method of the unit further comprises: forming at least one first internal slit and at least one second internal slit on the first diaphragm sub-portion; wherein the first anchoring edge is partially anchored; wherein the first anchoring edge includes at least one anchoring portion and at least one non-anchoring portion; wherein the at least one non-anchoring portion of the first anchoring edge is defined by the at least one first internal slit; wherein the at least one anchoring portion and the at least one non-anchoring portion are divided according to the at least one second internal slit. A method for forming a device, comprising: forming a package structure according to the forming method of claim 15; and assembling the package structure in the device including a housing through a surface mounting technology. A sound unit comprises: A diaphragm, comprising a first diaphragm sub-section and a second diaphragm sub-section, wherein the first diaphragm sub-section and the second diaphragm sub-section are opposite to each other; and An actuator layer, disposed on the first diaphragm sub-section and the second diaphragm sub-section; wherein the first diaphragm sub-section comprises a first anchoring edge, the first anchoring edge is fully anchored or partially anchored, and the edges of the first diaphragm sub-section except the first anchoring edge are all non-anchored; wherein the second diaphragm sub-section comprises a second anchoring edge, the second anchoring edge is fully anchored or partially anchored, and the edges of the second diaphragm sub-section except the second anchoring edge are all non-anchored. A sound unit as described in claim 25, wherein a first ratio of the diaphragm is greater than 2, and the first ratio of the diaphragm is the ratio of a first length of a first side of the diaphragm to a second length of a second side of the diaphragm. A sound unit as described in claim 25, wherein the diaphragm includes: a first slit formed between the first diaphragm sub-portion and the second diaphragm sub-portion, wherein a first non-anchored edge of the first diaphragm sub-portion is defined by the first slit, and the first non-anchored edge is opposite to the first anchored edge in a top view; and a second slit, wherein a second non-anchored edge of the first diaphragm sub-portion is defined by the second slit, and the second non-anchored edge is adjacent to the first anchored edge. A sound unit as described in claim 27, wherein the first non-anchored edge of the first diaphragm sub-section and a third non-anchored edge of the second diaphragm sub-section are defined by the first slit, and the third non-anchored edge of the second diaphragm sub-section is opposite to the second anchored edge of the second diaphragm sub-section in a plan view. The sound unit as described in claim 25 further includes a groove structure arranged at a corner of the sound unit, and the groove structure is used to disperse the stress applied to the groove structure during a peeling process. A sound unit as described in claim 29, wherein the diaphragm includes a slit segment arranged in a corner area of the diaphragm, and the groove structure is directly connected to the slit segment. A sound unit as described in claim 29, wherein the groove structure has a curved pattern. The sound unit as described in claim 25 further includes four groove structures, which are respectively arranged at the four corners of the sound unit, and the groove structures are used to disperse the stress applied to the groove structures during a peeling process. A sound unit as described in claim 25, wherein the diaphragm includes a latch structure for limiting the movement distance of the first diaphragm sub-section and the second diaphragm sub-section; wherein the movement distance is a distance along a normal direction of a base on which the sound unit is provided. A sound unit as described in claim 33, wherein the latching structure includes a first latching element and a second latching element, the first latching element is a part of the first diaphragm sub-portion, and the second latching element is a part of the second diaphragm sub-portion. A sound unit as described in claim 33, wherein the diaphragm further comprises: a first slit formed between the first diaphragm sub-portion and the second diaphragm sub-portion; wherein at least a portion of the latching structure is formed by the first slit. A sound unit as described in claim 25, wherein the diaphragm also includes a first spring directly connected between the first diaphragm sub-portion and the second diaphragm sub-portion. A sound unit as described in claim 36, wherein the diaphragm further comprises: At least one slit formed between the first diaphragm sub-portion and the second diaphragm sub-portion; wherein at least a portion of the first spring is formed by the at least one slit. A sound unit as described in claim 37, wherein one of the at least one slit comprises a hook-shaped curve pattern. A sound unit as described in claim 25, wherein the diaphragm includes: A third diaphragm sub-section, which is arranged on a first side between the first diaphragm sub-section and the second diaphragm sub-section in the sound unit in a plan view; wherein the third diaphragm sub-section is used to reduce acoustic leakage on the first side of the sound unit; wherein the third diaphragm sub-section includes a third anchoring edge, the third anchoring edge is anchored, and the edges of the third diaphragm sub-section except the third anchoring edge are all non-anchored. A sound unit as described in claim 39, wherein the diaphragm includes: A fourth diaphragm sub-section, which is arranged on a second side between the first diaphragm sub-section and the second diaphragm sub-section in the sound unit in a plan view; wherein the fourth diaphragm sub-section is used to reduce acoustic leakage on the second side of the sound unit; wherein the fourth diaphragm sub-section includes a fourth anchoring edge, the fourth anchoring edge is anchored, and the edges of the fourth diaphragm sub-section except the fourth anchoring edge are all non-anchored. A sound unit as described in claim 39, wherein the diaphragm includes: a first slit formed between the first diaphragm sub-section and the second diaphragm sub-section, wherein a first non-anchored edge of the first diaphragm sub-section is defined by the first slit, and the first non-anchored edge is opposite to the first anchored edge; and a second slit formed between the first diaphragm sub-section and the third diaphragm sub-section, wherein a second non-anchored edge of the first diaphragm sub-section and a fourth non-anchored edge of the third diaphragm sub-section are defined by the second slit, the second non-anchored edge of the first diaphragm sub-section is adjacent to the first anchored edge of the first diaphragm sub-section, and the fourth non-anchored edge of the third diaphragm sub-section is adjacent to the third anchored edge of the third diaphragm sub-section. A sound unit as described in claim 39, wherein the diaphragm includes: A second spring directly connected between the first diaphragm sub-section and the third diaphragm sub-section. A sound unit as described in claim 39, wherein at least one side slit is formed on the third diaphragm sub-portion; wherein no actuating layer is provided on the third diaphragm sub-portion. A sound unit as described in claim 25, wherein the first anchoring edge is partially anchored; wherein the first anchoring edge includes at least one anchoring portion and at least one non-anchoring portion, the at least one anchoring portion is anchored, and the at least one non-anchoring portion is non-anchored; wherein when the first diaphragm sub-portion is actuated, the at least one non-anchoring portion of the first anchoring edge moves toward a normal direction of a base on which the sound unit is disposed. A sound unit as described in claim 44, wherein the first diaphragm sub-section has at least one first internal slit and at least one second internal slit; wherein the at least one non-anchored portion of the first anchoring edge is defined by the at least one first internal slit; wherein the at least one second internal slit extends from the first anchoring edge to the first slit; wherein the first slit is formed between the first diaphragm sub-section and the second diaphragm sub-section, and a non-anchored edge of the first diaphragm sub-section is defined by the first slit. A sound unit as described in claim 45, wherein the first diaphragm sub-portion includes two second internal slits, and the second internal slits extend from the first anchoring edge to the first slit; wherein a portion of the actuation layer is disposed between the two second internal slits. A sound unit as described in claim 45, wherein the at least one anchoring portion and the at least one non-anchoring portion are divided according to the at least one second internal slit. A method for manufacturing a sound unit, comprising: Providing a wafer, wherein the wafer comprises a first layer and a second layer; Patterning the first layer of the wafer to form at least one channel line; and Placing the wafer on a substrate; wherein the first layer comprises a diaphragm, and at least one slit is formed in the diaphragm due to the at least one channel line and penetrates the diaphragm; wherein the diaphragm comprises a first diaphragm sub-portion and a second diaphragm sub-portion, wherein the first diaphragm sub-portion and the second diaphragm sub-portion are opposite to each other; wherein the first diaphragm sub-portion comprises a first anchoring edge, the first anchoring edge is fully anchored or partially anchored, and the edges of the first diaphragm sub-portion except the first anchoring edge are all non-anchored; The second diaphragm sub-portion includes a second anchoring edge, the second anchoring edge is fully anchored or partially anchored, and the edges of the second diaphragm sub-portion except the second anchoring edge are all non-anchored. The method for manufacturing a sound unit as described in claim 48 further comprises: forming a groove structure at a corner of the sound unit. The manufacturing method of the sound unit as described in claim 48 further comprises: forming a latch structure to limit the moving distance of the first diaphragm sub-section and the second diaphragm sub-section; wherein the moving distance is the distance along a normal direction of a substrate on which the sound unit is disposed. The method for manufacturing a sound unit as described in claim 48 further comprises: forming a spring between the first diaphragm sub-section and the second diaphragm sub-section. The method for manufacturing a sound unit as described in claim 48 further comprises: Patterning the first layer of the wafer so that the diaphragm further comprises a third diaphragm sub-section and a fourth diaphragm sub-section; wherein the third diaphragm sub-section is used to reduce acoustic leakage on a first side of the sound unit; wherein the fourth diaphragm sub-section is used to reduce acoustic leakage on a second side of the sound unit. The manufacturing method of the sound unit as described in claim 48 further comprises: forming at least one first internal slit and at least one second internal slit on the first diaphragm sub-portion; wherein the first anchoring edge is partially anchored; wherein the first anchoring edge includes at least one anchoring portion and at least one non-anchoring portion; wherein the at least one non-anchoring portion of the first anchoring edge is defined by the at least one first internal slit; wherein the at least one anchoring portion and the at least one non-anchoring portion are divided according to the at least one second internal slit.

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