TW202418514A - Electronic device - Google Patents
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- TW202418514A TW202418514A TW111140764A TW111140764A TW202418514A TW 202418514 A TW202418514 A TW 202418514A TW 111140764 A TW111140764 A TW 111140764A TW 111140764 A TW111140764 A TW 111140764A TW 202418514 A TW202418514 A TW 202418514A
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Abstract
Description
本揭露是有關於一種電子裝置,且特別是有關於一種具有較佳結構可靠度的電子裝置。The present disclosure relates to an electronic device, and more particularly to an electronic device with better structural reliability.
目前晶片與基板的接合面為無電鍍鎳浸金(Electroless Nickel Immersion Gold,ENIG)加上錫膏(Sn solder paste),或者是,無電鍍鎳浸金加上銅柱,或者是,銅加上導電銀膠(Silver Epoxy),或者是,無電鍍鎳浸金加上導電銀膠。然而,錫膏在迴銲(reflow)時所需的製程溫度較高,較不適用軟性基板;而導電銀膠所需的製程溫度比較低,可減少基板產生翹曲,但是銀膠迴銲後易有流動性不易控制其範圍,易於晶片接合時產生歪斜,且銀膠流動成平坦化時,易影響晶片接合時的晶片與基板之間的間隙高度與黏著力,因而影響產品的結構可靠度。Currently, the bonding surface between the chip and the substrate is electroless nickel immersion gold (ENIG) plus solder paste (Sn solder paste), or electroless nickel immersion gold plus copper pillars, or copper plus conductive silver epoxy, or electroless nickel immersion gold plus conductive silver epoxy. However, the process temperature required for solder paste during reflow is relatively high, making it less suitable for soft substrates. The process temperature required for conductive silver paste is relatively low, which can reduce the warping of the substrate. However, the silver paste is prone to fluidity after reflow and its range is difficult to control, which can easily cause chip tilt during chip bonding. When the silver paste flows into a flat surface, it is easy to affect the gap height and adhesion between the chip and the substrate during chip bonding, thereby affecting the structural reliability of the product.
本揭露提供一種電子裝置,其具有較佳的結構可靠度。The present disclosure provides an electronic device having better structural reliability.
本揭露的電子裝置,其包括一基板、一接合墊、一擋牆、一連接件以及一電子元件。接合墊設置於基板上。擋牆設置於接合墊上。連接件設置於基板上且與擋牆接觸。電子元件透過連接件與接合墊電性連接。The electronic device disclosed in the present invention comprises a substrate, a bonding pad, a baffle, a connector and an electronic element. The bonding pad is arranged on the substrate. The baffle is arranged on the bonding pad. The connector is arranged on the substrate and contacts the baffle. The electronic element is electrically connected to the bonding pad through the connector.
基於上述,在本揭露的電子裝置中,擋牆是設置於接合墊上,而連接件設置於基板上且與擋牆接觸,藉此可限制連接件的範圍及位置,可精準地控制電子元件與基板之間的間隙高度與均勻性,可降低電子元件產生歪斜的可能性。故,本揭露的電子裝置可具有較佳的結構可靠度。Based on the above, in the electronic device disclosed in the present invention, the baffle is disposed on the bonding pad, and the connector is disposed on the substrate and contacts the baffle, thereby limiting the range and position of the connector, and accurately controlling the height and uniformity of the gap between the electronic component and the substrate, and reducing the possibility of the electronic component being skewed. Therefore, the electronic device disclosed in the present invention can have better structural reliability.
為讓本揭露的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。In order to make the above features and advantages of the present disclosure more clearly understood, embodiments are specifically cited below and described in detail with reference to the accompanying drawings.
以下針對本揭露實施例的電子裝置作詳細說明。應瞭解的是,以下之敘述提供許多不同的實施例,用以實施本揭露一些實施例之不同態樣。以下所述特定的元件及排列方式僅為簡單清楚描述本揭露一些實施例。當然,這些僅用以舉例而非本揭露之限定。此外,在不同實施例中可能使用類似及/或對應的標號標示類似及/或對應的元件,以清楚描述本揭露。然而,這些類似及/或對應的標號的使用僅為了簡單清楚地敘述本揭露一些實施例,不代表所討論之不同實施例及/或結構之間具有任何關連性。The following is a detailed description of the electronic device of the disclosed embodiment. It should be understood that the following description provides many different embodiments for implementing different aspects of some embodiments of the disclosed embodiment. The specific elements and arrangements described below are only for simple and clear description of some embodiments of the disclosed embodiment. Of course, these are only used for exemplification and are not limitations of the disclosed embodiment. In addition, similar and/or corresponding numbers may be used in different embodiments to indicate similar and/or corresponding elements to clearly describe the disclosed embodiment. However, the use of these similar and/or corresponding numbers is only for simple and clear description of some embodiments of the disclosed embodiment, and does not represent any correlation between the different embodiments and/or structures discussed.
應理解的是,實施例中可能使用相對性用語,例如「較低」或「底部」或「較高」或「頂部」,以描述圖式的一個元件對於另一元件的相對關係。可理解的是,如果將圖式的裝置翻轉使其上下顛倒,則所敘述在「較低」側的元件將會成為在「較高」側的元件。本揭露實施例可配合圖式一併理解,本揭露之圖式亦被視為揭露說明之一部分。應理解的是,本揭露之圖式並未按照比例繪製,事實上,可能任意的放大或縮小元件的尺寸以便清楚表現出本揭露的特徵。It should be understood that relative terms, such as "lower" or "bottom" or "higher" or "top", may be used in the embodiments to describe the relative relationship of one element of the diagram to another element. It is understood that if the device of the diagram is turned upside down, the element described on the "lower" side will become the element on the "higher" side. The embodiments of the present disclosure can be understood in conjunction with the drawings, and the drawings of the present disclosure are also considered to be part of the disclosure. It should be understood that the drawings of the present disclosure are not drawn to scale, and in fact, the size of the elements may be arbitrarily enlarged or reduced in order to clearly show the features of the present disclosure.
再者,當述及一第一材料層位於一第二材料層上或之上時,可能包含第一材料層與第二材料層直接接觸之情形或第一材料層與第二材料層之間可能不直接接觸,亦即第一材料層與第二材料層之間可能間隔有一或更多其他材料層之情形。但若第一材料層直接位於第二材料層上時,即表示第一材料層與第二材料層直接接觸之情形。Furthermore, when a first material layer is mentioned as being located on or above a second material layer, it may include a situation where the first material layer is in direct contact with the second material layer or the first material layer and the second material layer may not be in direct contact, that is, there may be one or more other material layers between the first material layer and the second material layer. However, if the first material layer is directly located on the second material layer, it means that the first material layer and the second material layer are in direct contact.
此外,應理解的是,說明書與權利要求書中所使用的序數例如「第一」、「第二」等之用詞用以修飾元件,其本身並不意涵及代表該(或該些)元件有任何之前的序數,也不代表某一元件與另一元件的順序、或是製造方法上的順序,該些序數的使用僅用來使具有某命名的元件得以和另一具有相同命名的元件能作出清楚區分。權利要求書與說明書中可不使用相同用詞,例如,說明書中的第一元件在權利要求中可能為第二元件。In addition, it should be understood that the ordinal numbers used in the specification and claims, such as "first", "second", etc., to modify the components, do not imply or represent any previous ordinal numbers of the components (or components), nor do they represent the order of one component and another component, or the order of the manufacturing method. The use of these ordinal numbers is only used to make a component with a certain name clearly distinguishable from another component with the same name. The same terms may not be used in the claims and the specification. For example, the first component in the specification may be the second component in the claims.
在本揭露一些實施例中,關於接合、連接之用語例如「連接」、「互連」等,除非特別定義,否則可指兩個結構系直接接觸,或者亦可指兩個結構並非直接接觸,其中有其他結構設於此兩個結構之間。且此關於接合、連接之用語亦可包含兩個結構都可移動,或者兩個結構都固定之情況。此外,用語「電性連接」或「電性耦接」包含任何直接及間接的電性連接手段。In some embodiments of the present disclosure, terms such as "connected", "interconnected", etc., related to bonding and connection, unless otherwise specifically defined, may refer to two structures being in direct contact, or may also refer to two structures not being in direct contact, wherein other structures are disposed between the two structures. Moreover, such terms related to bonding and connection may also include situations where both structures are movable, or both structures are fixed. In addition, the terms "electrically connected" or "electrically coupled" include any direct and indirect electrical connection means.
于文中,「約」、「實質上」之用語通常表示在一給定值或範圍的10%內、或5%內、或3%之內、或2%之內、或1%之內、或0.5%之內。在此給定的數量為大約的數量,亦即在沒有特定說明「約」、「實質上」的情況下,仍可隱含「約」、「實質上」之含義。用語「範圍介於第一數值至第二數值之間」表示所述範圍包含第一數值、第二數值以及它們之間的其他數值。再者,任兩個用來比較的數值或方向,可存在著一定的誤差。若第一數值等於第二數值,其隱含著第一數值與第二數值之間可存在著約10%的誤差;若第一方向垂直於第二方向,則第一方向與第二方向之間的角度可介於80度至100度之間;若第一方向平行於第二方向,則第一方向與第二方向之間的角度可介於0度至10度之間。In the text, the terms "about" and "substantially" usually mean within 10%, within 5%, within 3%, within 2%, within 1%, or within 0.5% of a given value or range. The quantities given here are approximate quantities, that is, in the absence of specific description of "about" and "substantially", the meaning of "about" and "substantially" can still be implied. The term "ranging from a first value to a second value" means that the range includes the first value, the second value, and other values therebetween. Furthermore, any two values or directions used for comparison may have a certain error. If the first value is equal to the second value, it implies that there may be an error of about 10% between the first value and the second value; if the first direction is perpendicular to the second direction, the angle between the first direction and the second direction may be between 80 degrees and 100 degrees; if the first direction is parallel to the second direction, the angle between the first direction and the second direction may be between 0 degrees and 10 degrees.
本揭露通篇說明書與後附的權利要求書中會使用某些詞匯來指稱特定元件。本領域技術人員應理解,電子設備製造商可能會以不同的名稱來指稱相同的元件。本文並不意在區分那些功能相同但名稱不同的元件。在下文說明書與申請專利範圍中,「包括」、「含有」、「具有」等詞為開放式詞語,因此其應被解釋為「含有但不限定為…」之意。因此,當本揭露的描述中使用術語「包括」、「含有」及/或「具有」時,其指定了相應的特徵、區域、步驟、操作及/或元件的存在,但不排除一個或多個相應的特徵、區域、步驟、操作及/或元件的存在。Certain terms are used throughout the specification and the claims that follow to refer to specific components. It should be understood by those skilled in the art that electronic equipment manufacturers may refer to the same component by different names. This document is not intended to distinguish between components that have the same function but different names. In the following specification and patent application, the words "include", "contain", "have" and the like are open-ended words, and therefore should be interpreted as "including but not limited to..." Therefore, when the terms "include", "contain" and/or "have" are used in the description of the present disclosure, they specify the existence of corresponding features, regions, steps, operations and/or components, but do not exclude the existence of one or more corresponding features, regions, steps, operations and/or components.
應理解的是,以下所舉實施例可以在不脫離本揭露的精神下,可將數個不同實施例中的特徵進行替換、重組、結合以完成其他實施例。各實施例間特徵只要不違背發明精神或相衝突,均可任意結合搭配使用。It should be understood that the following embodiments may replace, reorganize, or combine features in several different embodiments to complete other embodiments without departing from the spirit of the present disclosure. Features between embodiments may be combined and used in any manner as long as they do not violate the spirit of the invention or conflict with each other.
此外,本揭露所揭示的電子裝置可包含顯示裝置、背光裝置、天線裝置、感測裝置、拼接裝置、觸控電子裝置(touch display)、曲面電子裝置(curved display)或非矩形電子裝置(free shape display),但不以此為限。電子裝置可例如包含液晶(liquid crystal)、發光二極體(light emitting diode)、螢光(fluorescence)、磷光(phosphor)、其它合適的顯示介質、或前述之組合,但不以此為限。顯示裝置可為非自發光型顯示裝置或自發光型顯示裝置。天線裝置可為液晶型態的天線裝置或非液晶型態的天線裝置,但不以此為限。天線裝置可為相陣列天線或微帶天線,但不以此為限。感測裝置可為感測電容、光線、熱能或超聲波的感測裝置,但不以此為限。電子元件可包括被動元件與主動元件,例如電容、電阻、電感、二極體、電晶體等。二極體可包括發光二極體(light emitting diode,LED)或光電二極體(photodiode)。發光二極體可例如包括有機發光二極體(organic light emitting diode,OLED)、次毫米發光二極體(mini LED)、微發光二極體(micro LED)或量子點發光二極體(quantum dot LED),但不以此為限。拼接裝置可例如是顯示器拼接裝置或天線拼接裝置,但不以此為限。需注意的是,電子裝置可為前述之任意排列組合,但不以此為限。此外,電子裝置可為可彎折或可撓式電子裝置。需注意的是,電子裝置可為前述之任意排列組合,但不以此為限。此外,電子裝置的外形可為矩形、圓形、多邊形、具有彎曲邊緣的形狀或其他適合的形狀。電子裝置可以具有驅動系統、控制系統、光源系統、層架系統…等周邊系統以支援顯示裝置、天線裝置或拼接裝置。為方便說明,下文將以電子裝置為背光裝置的態樣進行說明,但本揭露不以此為限。In addition, the electronic device disclosed in the present disclosure may include a display device, a backlight device, an antenna device, a sensing device, a splicing device, a touch display, a curved display, or a free shape display, but is not limited thereto. The electronic device may, for example, include a liquid crystal, a light emitting diode, fluorescence, phosphor, other suitable display media, or a combination thereof, but is not limited thereto. The display device may be a non-self-luminous display device or a self-luminous display device. The antenna device may be a liquid crystal antenna device or a non-liquid crystal antenna device, but is not limited thereto. The antenna device may be a phase array antenna or a microstrip antenna, but is not limited thereto. The sensing device may be a sensing device for sensing capacitance, light, heat or ultrasound, but is not limited thereto. The electronic components may include passive components and active components, such as capacitors, resistors, inductors, diodes, transistors, etc. The diode may include a light emitting diode (LED) or a photodiode. The light emitting diode may, for example, include an organic light emitting diode (OLED), a sub-millimeter light emitting diode (mini LED), a micro LED or a quantum dot light emitting diode (quantum dot LED), but is not limited thereto. The splicing device may, for example, be a display splicing device or an antenna splicing device, but is not limited thereto. It should be noted that the electronic device may be any combination of the aforementioned arrangements, but is not limited thereto. In addition, the electronic device may be a bendable or flexible electronic device. It should be noted that the electronic device may be any arrangement or combination of the aforementioned, but is not limited thereto. In addition, the shape of the electronic device may be rectangular, circular, polygonal, a shape with curved edges, or other suitable shapes. The electronic device may have peripheral systems such as a drive system, a control system, a light source system, a shelf system, etc. to support a display device, an antenna device, or a splicing device. For ease of explanation, the following description will be based on the electronic device being a backlight device, but the present disclosure is not limited thereto.
除非另外定義,在此使用的全部用語(包含技術及科學用語)具有與本揭露所屬技術領域的技術人員通常理解的相同涵義。能理解的是,這些用語例如在通常使用的字典中定義用語,應被解讀成具有與相關技術及本揭露的背景或上下文一致的意思,而不應以一理想化或過度正式的方式解讀,除非在本揭露實施例有特別定義。Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by a person skilled in the art to which the present disclosure belongs. It is understood that these terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning consistent with the background or context of the relevant technology and the present disclosure, and should not be interpreted in an idealized or overly formal manner unless specifically defined in the embodiments of the present disclosure.
現將詳細地參考本揭露的示範性實施例,示範性實施例的實例說明於附圖中。只要有可能,相同元件符號在圖式和描述中用來表示相同或相似部分。Reference will now be made in detail to exemplary embodiments of the present disclosure, examples of which are illustrated in the accompanying drawings. Whenever possible, the same reference numerals are used in the drawings and description to represent the same or like parts.
圖1是依照本發明的一實施例的一種電子裝置的俯視示意圖。圖2是沿圖1中的線A-A的剖面示意圖。須說明的是,為了方便說明起見,圖1中省略繪示部分構件,如絕緣層與電子元件,而圖2中以虛線表示未接合前的電子元件。Fig. 1 is a schematic top view of an electronic device according to an embodiment of the present invention. Fig. 2 is a schematic cross-sectional view along line A-A in Fig. 1. It should be noted that, for the sake of convenience, some components such as an insulating layer and electronic components are omitted in Fig. 1, and the electronic components before bonding are indicated by dashed lines in Fig. 2.
請同時參考圖1以及圖2,在本實施例中,電子裝置10包括一基板110、一接合墊112、一擋牆120、一連接件130以及一電子元件200。接合墊112設置於基板110上。擋牆120設置於接合墊112上。連接件130設置於基板110上且與擋牆120接觸。電子元件200透過連接件130與接合墊112電性連接。Please refer to FIG. 1 and FIG. 2 at the same time. In this embodiment, the
詳細來說,在本實施例中,基板110包括母板及位於母板上的電路,其中母板可以是可撓曲母板或不可撓曲母板,而母板的材料可以是玻璃、玻纖(FR4)、塑膠或其他適當的材料,但不限於此。接合墊112的材質例如包括任何合適的導電材料,例如錫、銅、金,但並不以此為限。本實施例的電子裝置10還包括一絕緣層114,設置於基板110上且覆蓋部分接合墊112,其中絕緣層114設置於接合墊112與擋牆120之間。Specifically, in the present embodiment, the
如圖2所示,本實施例的擋牆120是設置在位於接合墊112上的絕緣層114上,其中擋牆120於基板110上的正投影重疊於接合墊112於基板110的正投影上。於一實施例中,擋牆120的材質可例如是光刻劑、聚合物或乾膜(dry film)。於一實施例中,擋牆120可例如是光間隙物(photo spacer)或聚合物圖案(polymer pattern)。本實施例的擋牆120的邊緣S2可切齊於絕緣層114的邊緣S1。於一實施例中,擋牆120的一高度H與一寬度W的比值例如是介於0.1至2之間,可減少材料介電常數( DielectricConstant, Dk )/ 介電損失(Dissipation Factor, 簡稱Df)特性影響微波特性(即波損)。於此,在一剖面上,擋牆120的高度H可以是垂直於基板110的延伸方向的最大高度,而擋牆120的寬度W可以是沿著基板110的延伸方向的最大寬度。As shown in FIG. 2 , the
此外,本實施例的連接件130例如是導電銀膠,例如是以鋼板、網印或噴塗方式來形成,但不此為限。電子元件200例如是發光二極體晶片(LED die),可以是由矽(Si)、砷化鎵(GaAs)、氮化鎵(GaN)、碳化矽(SiC) 、藍寶石(Sapphire)或玻璃基板所製成的晶片,但不限於此。於另一實施例中,晶片亦可以是半導體封裝元件,例如是球格陣列式(Ball Grid Array, BGA)封裝元件、晶片尺寸封裝(Chip Size Package,CSP)元件、覆晶晶片或2.5維/3維(2.5D/3D)半導體封裝元件,但不限於此。於另一實施例中,晶片也可以是任何一種覆晶晶片鍵合元件,覆晶晶片鍵合元件例如可包括集成電路(IC)、電晶體(transistors)、可控矽整流器、閥門(valves)、薄膜電晶體(Thin Film Transistors)、電容、電感、可變電容、濾波器、電阻、二極體、發光二極體、微機電系統元件(MEMS)、液晶晶片(liquid crystal chip)等,但不限於此。電子元件200的連接墊202可透過連接件130與接合墊112電性連接。也就是說,連接墊202與接合墊112是透過連接件130而結構性且電性連接在一起。意即,本實施例的電子元件200例如是以覆晶的方式接合於基板110上。In addition, the
簡言之,在本實施例中,擋牆120是設置於接合墊112上,而連接件130設置於基板110上且與擋牆120接觸,藉此可限制連接件130的範圍及位置,並可精準地控制電子元件200與基板110之間的間隙高度與均勻性,可降低電子元件200產生歪斜的可能性。故,本揭露的電子裝置10可具有較佳的結構可靠度。In short, in this embodiment, the
在此須說明的是,下述實施例沿用前述實施例的元件標號與部分內容,其中採用相同的標號來表示相同或近似的元件,並省略相同技術內容的說明。關於省略部分的說明可參考前述實施例,下述實施例不再重複贅述。It should be noted that the following embodiments use the same component numbers and some contents of the previous embodiments, wherein the same number is used to represent the same or similar components, and the description of the same technical contents is omitted. The description of the omitted parts can refer to the previous embodiments, and the following embodiments will not be repeated.
圖3是依照本發明的另一實施例的一種電子裝置的剖面示意圖。請同時參考圖2與圖3,本實施例的電子裝置10a與圖2的電子裝置10相似,兩者的差異在於:在本實施例中,擋牆120a的邊緣S3與絕緣層114的邊緣S1相隔一距離D,其中間距D例如是介於1微米至10微米之間。此處,擋牆120a從絕緣層114上延伸至基板110上,且會覆蓋絕緣層114的邊緣S1以及基板110的部分表面。FIG3 is a cross-sectional schematic diagram of an electronic device according to another embodiment of the present invention. Referring to FIG2 and FIG3 at the same time, the
圖4是依照本發明的另一實施例的一種電子裝置的剖面示意圖。請同時參考圖2與圖4,本實施例的電子裝置10b與圖2的電子裝置10相似,兩者的差異在於:在本實施例中,擋牆120b的邊緣S4與接合墊112的邊緣S5相隔一間距G,其中間距G例如是介於1微米至10微米之間。此處,擋牆120b是位於絕緣層114上,且擋牆120b於基板110上的正投影完全重疊於接合墊112於基板110上的正投影。FIG4 is a cross-sectional schematic diagram of an electronic device according to another embodiment of the present invention. Referring to FIG2 and FIG4 at the same time, the
圖5至圖7是依照本發明的一實施例的一種電子裝置的製作方法剖面示意圖。圖8是圖7的俯視示意圖。須說明的是,為了方便說明起見,圖7是沿著圖8中的線B-B的剖面示意圖,而圖8中省略繪示部分構件,如絕緣層與電子元件。Fig. 5 to Fig. 7 are cross-sectional schematic diagrams of a method for manufacturing an electronic device according to an embodiment of the present invention. Fig. 8 is a top view schematic diagram of Fig. 7. It should be noted that, for the sake of convenience, Fig. 7 is a cross-sectional schematic diagram along the line B-B in Fig. 8, and some components, such as an insulating layer and electronic components, are omitted in Fig. 8.
請先參考圖5,在本實施例中,乾膜120’及其上的覆蓋層140可貼附於基板110上,其中乾膜120’位於覆蓋層140與絕緣層114及接合墊112之間。此處,覆蓋層140的材質例如是聚對苯二甲酸乙二醇酯(PET),但不以此為限。Please refer to FIG. 5 . In this embodiment, the
接著,請參考圖6,對覆蓋層140及乾膜120’進行一雷射程序,以雷射光L來形成擋牆120c以及覆蓋層142。此處,因雷射燒蝕的緣故,所形成的擋牆120c具有一粗糙表面121。Next, referring to Fig. 6, a laser process is performed on the
之後,請同時參考圖7及圖8,設置連接件130於基板110上且與擋牆120c接觸。此時,擋牆120c與連接件130接觸的一表面即為為粗糙表面121,可增加連接件130與擋牆120c之間的附著力。最後,接合電子元件200,以使電子元件200透過連接件130與接合墊112電性連接。至此,已完成電子裝置10c的製作。Afterwards, please refer to FIG. 7 and FIG. 8 at the same time, the
圖9是依照本發明的一實施例的一種電子裝置的俯視示意圖。圖10是沿圖9中的線C-C的剖面示意圖。須說明的是,為了方便說明起見,圖9中省略繪示部分構件,如絕緣層與電子元件。Fig. 9 is a schematic top view of an electronic device according to an embodiment of the present invention. Fig. 10 is a schematic cross-sectional view along line C-C in Fig. 9. It should be noted that, for the sake of convenience of explanation, some components, such as insulating layers and electronic components, are omitted in Fig. 9.
請同時參考圖1、圖2、圖9以及圖10,本實施例的電子裝置10d與圖2的電子裝置10相似,兩者的差異在於:在本實施例中,以俯視觀之,擋牆120d具有至少一開口(示意地繪示二個開口125d),而連接件130d可延伸至開口125d內,以藉由開口125d的設計來調解連接件130的量,可精確地控制電子元件200與基板110之間的間隙高度。值得一提的是,擋牆120d的開口125d數量及其位置可視需求而變動,於此並不加以限制。Please refer to FIG. 1, FIG. 2, FIG. 9 and FIG. 10 simultaneously. The
圖11是依照本發明的一實施例的一種電子裝置的俯視示意圖。圖12是沿圖11中的線D-D的剖面示意圖。須說明的是,為了方便說明起見,圖11中省略繪示部分構件,如絕緣層與電子元件。Fig. 11 is a schematic top view of an electronic device according to an embodiment of the present invention. Fig. 12 is a schematic cross-sectional view along line D-D in Fig. 11. It should be noted that, for the sake of convenience of explanation, some components, such as insulating layers and electronic components, are omitted in Fig. 11.
請同時參考圖9、圖10、圖11以及圖12,本實施例的電子裝置10e與圖10的電子裝置10d相似,兩者的差異在於:在本實施例中,以俯視觀之,擋牆120e包括一第一擋牆部122e以及一第二擋牆部124e。第一擋牆部122e具有多個開口125e,而第二擋牆部124e環繞第一擋牆部122e。部分連接件130e延伸至開口125e內且位於第一擋牆部122e與第二擋牆部124e之間。換言之,本實施例的擋牆120e是以多迴圈(如雙迴圈)的設計來降低連接件130e溢流,可精確地控制電子元件200與基板110之間的間隙高度。值得一提的是,第一擋牆部122e的開口125e數量及其位置可視需求而變動,於此並不加以限制。Please refer to FIG. 9, FIG. 10, FIG. 11 and FIG. 12 simultaneously. The
圖13是依照本發明的另一實施例的一種電子裝置的俯視透視示意圖。須說明的是,為了方便說明起見,圖13中省略繪示部分構件,如接合墊及連接件。請參考圖13,在本實施例中,以俯視觀之電子裝置10f,其電子元件300包括連接墊302、連接墊304、連接墊306及連接墊308,而擋牆120f包括擋牆部122f、擋牆部124f、擋牆部126f以及擋牆部128f。於一實施例中,擋牆120f可設置在電子元件300上,但並不以此為限。擋牆部122f具有開口125f1,擋牆部124f具有開口125f2,而擋牆部126f具有開口125f3,且擋牆部128f具有開口125f4。擋牆部122f環繞連接墊302,擋牆部124f環繞連接墊304,而擋牆部126f環繞連接墊306,且擋牆部128f環繞連接墊308。擋牆部122f的開口125f1與擋牆部124f的開口125f2彼此背向設置,而擋牆部126f的開口125f3與擋牆部128f的開口125f4彼此背向設置。也就是說,開口125f1與開口125f2朝向不同方向,而開口125f3與開口125f4朝向不同方向,藉此可降低短路的機會。值得一提的是,電子元件300的連接墊302、304、306、308的數量可視需求而增減,於此並不加以限制。FIG. 13 is a schematic diagram of an electronic device according to another embodiment of the present invention, which is viewed from above. It should be noted that, for the sake of convenience, some components, such as bonding pads and connectors, are omitted in FIG. 13 . Referring to FIG. 13 , in this embodiment, the
圖14是依照本發明的另一實施例的一種電子裝置的俯視透視示意圖。須說明的是,為了方便說明起見,圖14中省略繪示部分構件,如接合墊及連接件。請同時參考圖13與圖14,本實施例的電子裝置10g與圖13的電子裝置10f相似,兩者的差異在於:在本實施例中,以俯視觀之,擋牆120g包括多個擋牆部120g1、120g2、120g3、120g4。擋牆部120g1包括一第一擋牆部122g以及一第二擋牆部124g1,其中第二擋牆部124g1環繞第一擋牆部122。擋牆部120g2包括一第一擋牆部122g以及一第二擋牆部124g2,其中第二擋牆部124g2環繞第一擋牆部122。擋牆部120g3包括一第一擋牆部122g以及一第二擋牆部124g3,其中第二擋牆部124g3環繞第一擋牆部122。擋牆部120g4包括一第一擋牆部122g以及一第二擋牆部124g4,其中第二擋牆部124g4環繞第一擋牆部122。第一擋牆部122g具有設置於左右兩側中間處的兩開口125g。第二擋牆部124g1具有設置於左上角的一開口127g1。第二擋牆部124g2具有設置於右上角的一開口127g2。第二擋牆部124g3具有設置於左下角的一開口127g3。第二擋牆部124g4具有設置於右上角的一開口127g4。換言之,本實施例的擋牆部120g1、120g2、120g3、120g4是以多迴圈(如雙迴圈)搭配開口125g、127g1、127g2、127g3、127g4的設計,可降低電子元件200產生歪斜的可能性,可增加穩定性。FIG. 14 is a schematic diagram of an electronic device according to another embodiment of the present invention, which is viewed from above. It should be noted that, for the sake of convenience, some components, such as the bonding pad and the connector, are omitted in FIG. 14. Please refer to FIG. 13 and FIG. 14 simultaneously. The
綜上所述,在本揭露的電子裝置中,擋牆是設置於接合墊上,而連接件設置於基板上且與擋牆接觸,藉此可限制連接件的範圍及位置,可精準地控制電子元件與基板之間的間隙高度與均勻性,可降低電子元件產生歪斜的可能性。故,本揭露的電子裝置可具有較佳的結構可靠度。In summary, in the electronic device disclosed herein, the baffle is disposed on the bonding pad, and the connector is disposed on the substrate and contacts the baffle, thereby limiting the range and position of the connector, and accurately controlling the height and uniformity of the gap between the electronic component and the substrate, thereby reducing the possibility of the electronic component being skewed. Therefore, the electronic device disclosed herein can have better structural reliability.
最後應說明的是,以上各實施例僅用以說明本揭露的技術方案,而非對其限制;儘管參照前述各實施例對本揭露進行了詳細的說明,本領域的普通技術人員應當理解:其依然可以對前述各實施例所記載的技術方案進行修改,或者對其中部分或者全部技術特徵進行等同替換;而這些修改或者替換,並不使相應技術方案的本質脫離本揭露各實施例技術方案的範圍。Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present disclosure, rather than to limit them. Although the present disclosure has been described in detail with reference to the above embodiments, ordinary technical personnel in this field should understand that they can still modify the technical solutions described in the above embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the scope of the technical solutions of the embodiments of the present disclosure.
10、10a、10b、10c、10d、10e、10f、10g:電子裝置
110:基板
112:接合墊
114:絕緣層
120、120a、120b、120c、120d、120e、120f、120g:擋牆
120’:乾膜
121:粗糙表面
122e、122g:第一擋牆部
122f、124f、126f、128f、120g1、120g2、120g3、120g4:擋牆部
124e、124g1、124g2、124g3、124g4:第二擋牆部
125d、125e、125f1、125f2、125f3、125f4、125g、127g1、127g2、127g3、127g4:開口
130、130d、130e:連接件
140、142:覆蓋層
200、300:電子元件
202、302、304、306、308:連接墊
D:距離
G:間距
H:高度
L:雷射光
S1、S2、S3、S4、S5:邊緣
W:寬度
10, 10a, 10b, 10c, 10d, 10e, 10f, 10g: electronic device
110: substrate
112: bonding pad
114: insulating
圖1是依照本發明的一實施例的一種電子裝置的俯視示意圖。 圖2是沿圖1中的線A-A的剖面示意圖。 圖3是依照本發明的另一實施例的一種電子裝置的剖面示意圖。 圖4是依照本發明的另一實施例的一種電子裝置的剖面示意圖。 圖5至圖7是依照本發明的一實施例的一種電子裝置的製作方法剖面示意圖。 圖8是圖7的俯視示意圖。 圖9是依照本發明的一實施例的一種電子裝置的俯視示意圖。 圖10是沿圖9中的線C-C的剖面示意圖。 圖11是依照本發明的一實施例的一種電子裝置的俯視示意圖。 圖12是沿圖11中的線D-D的剖面示意圖。 圖13是依照本發明的另一實施例的一種電子裝置的俯視透視示意圖。 圖14是依照本發明的另一實施例的一種電子裝置的俯視透視示意圖。 FIG. 1 is a schematic top view of an electronic device according to an embodiment of the present invention. FIG. 2 is a schematic cross-sectional view along line A-A in FIG. 1. FIG. 3 is a schematic cross-sectional view of an electronic device according to another embodiment of the present invention. FIG. 4 is a schematic cross-sectional view of an electronic device according to another embodiment of the present invention. FIG. 5 to FIG. 7 are schematic cross-sectional views of a method for manufacturing an electronic device according to an embodiment of the present invention. FIG. 8 is a schematic top view of FIG. 7. FIG. 9 is a schematic top view of an electronic device according to an embodiment of the present invention. FIG. 10 is a schematic cross-sectional view along line C-C in FIG. 9. FIG. 11 is a schematic top view of an electronic device according to an embodiment of the present invention. FIG. 12 is a schematic cross-sectional view along line D-D in FIG. 11. FIG. 13 is a schematic diagram of a top perspective view of an electronic device according to another embodiment of the present invention. FIG. 14 is a schematic diagram of a top perspective view of an electronic device according to another embodiment of the present invention.
10:電子裝置 10: Electronic devices
110:基板 110: Substrate
112:接合墊 112:Joint pad
114:絕緣層 114: Insulation layer
120:擋牆 120:Block
130:連接件 130: Connectors
200:電子元件 200: Electronic components
202:連接墊 202:Connection pad
H:高度 H: Height
W:寬度 W: Width
S1、S2:邊緣 S1, S2: Edge
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TWI781754B (en) * | 2021-09-08 | 2022-10-21 | 隆達電子股份有限公司 | Pixel unit and manufacturing method thereof |
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