TW202417944A - Reflective display device and manufacturing method thereof - Google Patents

Abstract

A reflective display device includes a substrate, a first conductive layer, a second conductive layer, a third conductive layer and a capacitor. The first conductive layer is disposed on the substrate, wherein the first conductive layer includes a first electrode including a plurality of first island structures electrically connected to each other. The second conductive layer is disposed on the first conductive layer, wherein the second conductive layer includes a second electrode including a plurality of second island structures electrically connected to each other. The third conductive layer is disposed on the second conductive layer, wherein the third conductive layer includes a third electrode including a plurality of third island structures electrically connected to each other. The capacitor includes the second electrode and the third electrode. One of the first island structures, one of the second island structures and one of the third island structures are overlapped with each other in a normal direction of the substrate.

Description

Reflective display device and manufacturing method thereof

The present invention relates to a reflective display device and a manufacturing method thereof, and more particularly to a reflective display device and a manufacturing method thereof with improved driving capability and display quality.

Electronic devices are indispensable products today. Display devices with display functions, such as monitors, notebooks, smart phones, wearable devices, smart watches, and car displays, have also been widely used in many places.

The circuits in a display device often greatly affect the display quality of the display device, so the circuit design in the display device requires an appropriate and excellent design. In circuit design, in addition to designing the configuration of each electronic component and the connection between the electronic components, each electronic component must also have appropriate and sufficient physical quantities that meet the circuit design (such as the capacitance value of the capacitor, the resistance value of the resistor, etc.) to enable the display device to have good display quality. In order to increase the capacitance value of the capacitor in the display device under the same setting space conditions, in order to improve the driving capability and/or improve the display quality, the industry is committed to designing capacitors.

The object of the present invention is to provide a reflective display device and a manufacturing method thereof, which increases the capacitance of the capacitor by making the electrode of the capacitor have an island structure to increase the surface area of the electrode, thereby improving the driving ability and/or display quality of the reflective display device.

In order to solve the above technical problems, the present invention provides a reflective display device, which includes a substrate, a first conductive layer, a second conductive layer, a third conductive layer and a capacitor. The first conductive layer is arranged on the substrate, wherein the first conductive layer includes a first electrode, the first electrode includes a plurality of first island structures in a cross section, and the first island structures are electrically connected to each other. The second conductive layer is arranged on the first conductive layer, wherein the second conductive layer includes a second electrode, the second electrode includes a plurality of second island structures in a cross section, and the second island structures are electrically connected to each other. The third conductive layer is arranged on the second conductive layer, wherein the third conductive layer includes a third electrode, the third electrode includes a plurality of third island structures in a cross section, and the third island structures are electrically connected to each other. The capacitor includes the second electrode and the third electrode. One of the first island structures, one of the second island structures and one of the third island structures overlap in the normal direction of the substrate.

To solve the above technical problems, the present invention also provides a method for manufacturing a reflective display device, which comprises: forming a first conductive layer on a substrate; patterning the first conductive layer to form a first electrode including a plurality of first island structures in the first conductive layer, wherein the first island structures are electrically connected to each other; forming a first insulating layer on the first conductive layer; forming a second conductive layer on the first insulating layer; The second conductive layer is patterned to form a second electrode including a plurality of second island structures in the second conductive layer, wherein the second island structures are electrically connected to each other; a second insulating layer is formed on the second conductive layer; a third conductive layer is formed on the second insulating layer; and the third conductive layer is patterned to form a third electrode including a plurality of third island structures in the third conductive layer, wherein the third island structures are electrically connected to each other. The reflective display device includes a capacitor, the capacitor includes a second electrode and a third electrode. One of the first island structures, one of the second island structures, and one of the third island structures overlap in a normal direction of the substrate.

Since the electrode of the capacitor of the present invention has an island structure, the surface area of the contact insulating layer in the electrode can be increased to increase the capacitance value of the capacitor, thereby improving the driving ability and/or display quality of the reflective display device.

In order to enable the technical personnel in this field to further understand the present invention, the preferred embodiments of the present invention are listed below, and the components and the effects to be achieved of the present invention are described in detail with the accompanying drawings. It should be noted that the accompanying drawings are simplified schematic diagrams, and therefore, only the components and combination relationships related to the present invention are shown to provide a clearer description of the basic structure or implementation method of the present invention, while the actual components and layout may be more complicated. In addition, for the convenience of explanation, the components shown in the various drawings of the present invention are not drawn in proportion to the number, shape, and size of the actual implementation, and the detailed proportions can be adjusted according to the design requirements.

In the following specification and claims, words such as "include", "contain", "have" and the like are open-ended words, and therefore should be interpreted as "including but not limited to..." Therefore, when the terms "include", "contain" and/or "have" are used in the description of the present invention, they specify the existence of corresponding features, regions, steps, operations and/or components, but do not exclude the existence of one or more corresponding features, regions, steps, operations and/or components.

In the following description and claims, when "A1 component is formed by B1", it means that the formation of A1 component exists with B1 or uses B1, and the formation of A1 component does not exclude the existence or use of one or more other features, regions, steps, operations and/or components.

In the following description and claims, the term "horizontal direction" refers to a direction parallel to a horizontal plane, the term "horizontal plane" refers to a surface parallel to the directions X and Y in the drawings (i.e., directions X and Y are different horizontal directions), and the term "vertical direction" refers to a direction parallel to the direction Z in the drawings, and directions X, Y, and Z are perpendicular to each other. In the description and claims, the term "top view" refers to the viewing result along the vertical direction, and the term "section" refers to the viewing result of a structure cut along the vertical direction and viewed from the horizontal direction.

In the specification and claims, the term "parallel" means that the angle between two components can be less than or equal to a specific angle, such as 5 degrees, 3 degrees, or 1 degree.

In the following description and claims, the term "overlap" means the overlap of two components in direction Z, and unless otherwise specified, the term "overlap" includes partial overlap or full overlap, wherein the two components may be in direct contact with each other or there may be a spacer between the two components.

The ordinal numbers used in the specification and claim, such as "first", "second", etc., are used to modify the components. They do not imply or represent any previous ordinal number of the component (or components), nor do they represent the order of one component to another component, or the order of the manufacturing method. The use of these ordinal numbers is only to make the component with a certain name clearly distinguishable from another component with the same name. The claim and the specification may not use the same words, and accordingly, the first component in the specification may be the second component in the claim.

It should be noted that the following embodiments can replace, reorganize, or mix features in several different embodiments to complete other embodiments without departing from the spirit of the invention. The features of each embodiment can be mixed and matched as long as they do not violate the spirit of the invention or conflict with each other.

The reflective display device of the present invention may be a non-self-luminous reflective display, wherein the non-self-luminous reflective display may include, for example, liquid crystal molecules, colloid materials for electrophoresis, or other suitable display medium materials, but not limited thereto. The shape of the reflective display device may be a polygon (e.g., a rectangle), a shape with curved edges (e.g., a circle, an ellipse), or other suitable shapes, but not limited thereto.

The reflective display device may have a display area and a peripheral area disposed at least one outer side of the display area, wherein the display area is used for displaying images, and electronic components (e.g., drive circuits, chips, conductive particles, etc.) used to assist the display area may be disposed in the peripheral area. For example, the peripheral area may surround the active area, but is not limited thereto.

The display area of the reflective display device may include a plurality of pixels (Pixel) used as a unit for displaying a picture, wherein a pixel may include at least one sub-pixel (Sub-pixel). In some embodiments, if the reflective display device is a color display, a pixel example may include a plurality of sub-pixels, such as a green sub-pixel, a red sub-pixel, and a blue sub-pixel, but not limited thereto, and the number and color of sub-pixels included in a pixel may be changed as required. In some embodiments, if the reflective display device is a monochrome display, a pixel example may include only one sub-pixel, but not limited thereto. For example, the color of the sub-pixel may be designed by the arrangement of the color conversion layer and/or the display medium in the reflective display device, but not limited thereto.

Please refer to FIG. 1, which is a cross-sectional schematic diagram of a reflective display device according to an embodiment of the present invention. As shown in FIG. 1, the reflective display device 100 includes a first substrate 110, and may optionally include a second substrate (not shown) opposite to the first substrate 110, wherein the first substrate 110 and the second substrate may be a hard substrate or a flexible substrate, and may correspond to, for example, glass, plastic, quartz, sapphire, polyimide (PI), polyethylene terephthalate (PET), other suitable materials or combinations thereof according to their types, but not limited thereto. In addition, the shapes and sizes of the first substrate 110 and the second substrate may be designed according to requirements, wherein the shapes of the first substrate 110 and the second substrate may be polygonal (e.g., rectangular), shapes with curved edges (e.g., circular, elliptical), or other suitable shapes, but not limited thereto. It should be noted that, in FIG. 1 , the normal direction of the first substrate 110 is parallel to the Z direction.

As shown in FIG. 1 , the reflective display device 100 may include a circuit element layer 120 disposed on a first substrate 110 (disposed between the first substrate 110 and a second substrate), wherein the circuit element layer 120 may include at least one conductive layer, at least one insulating layer, at least one semiconductor layer, other suitable film layers or combinations thereof. In the present invention, examples of materials for the conductive layer may include metals, transparent conductive materials (such as indium tin oxide (ITO), indium zinc oxide (IZO), etc.), other suitable conductive materials or combinations thereof; examples of materials for the insulating layer may include silicon oxide ( _SiOx ), silicon nitride ( _SiNy ), silicon oxynitride ( _SiOxNy ), organic insulating materials (such as photosensitive _resins ), other suitable insulating materials or combinations thereof; examples of materials for the semiconductor layer may include polycrystalline silicon (poly-silicon), amorphous silicon (amorphous silicon), metal-oxide semiconductor (IGZO) semiconductors, other suitable semiconductor materials or combinations thereof, but are not limited thereto.

In this embodiment, the circuit element layer 120 may include any suitable electronic components, and these electronic components may be formed by film layers in the circuit element layer 120. For example, the circuit element layer 120 may include thin film transistors SW, data lines (conductive traces), scanning lines (conductive traces), capacitors, electrodes and/or other suitable electronic components.

As shown in FIG. 1 , the circuit element layer 120 may include a first conductive layer CL1 disposed on the first substrate 110, wherein the first conductive layer CL1 may include any suitable structure as required. As shown in FIG. 1 , the first conductive layer CL1 of the present embodiment may include a gate GE of the thin film transistor SW, a scanning line (conductive trace) and a first electrode E1, wherein the scanning line may be connected to the gate GE of the thin film transistor SW to electrically connect the thin film transistor SW, and the first electrode E1 may be used to receive a common signal and be insulated from the scanning line, but the present invention is not limited thereto. For example, the first conductive layer CL1 may be an opaque metal layer and include metal, but the present invention is not limited thereto.

As shown in FIG1 , the circuit element layer 120 may include a first insulating layer IL1 disposed on the first conductive layer CL1. As shown in FIG1 , a portion of the first insulating layer IL1 of the present embodiment may be used as a gate insulating layer of the thin film transistor SW, but the present invention is not limited thereto.

As shown in FIG1 , the circuit element layer 120 may include a semiconductor layer SM disposed on the first insulating layer IL1. As shown in FIG1 , the semiconductor layer SM of this embodiment may include a channel layer CN of a thin film transistor SW, but is not limited thereto.

As shown in FIG. 1 , the circuit element layer 120 may include a second conductive layer CL2 disposed on the first insulating layer IL1 and the first conductive layer CL1 (i.e., the first insulating layer IL1 is disposed between the first conductive layer CL1 and the second conductive layer CL2), wherein at least a portion of the first insulating layer IL1 may be used to separate at least a portion of the first conductive layer CL1 from at least a portion of the second conductive layer CL2. In the present invention, the second conductive layer CL2 may include any suitable structure as required. As shown in FIG. 1 , the second conductive layer CL2 of the present embodiment may include a source SE of the thin film transistor SW, a drain DE of the thin film transistor SW, a data line, and a second electrode E2, wherein the data line may be connected to the source SE of the thin film transistor SW to electrically connect the thin film transistor SW, but is not limited thereto. In this embodiment, the drain DE of the thin film transistor SW can be connected to the second electrode E2, so when the thin film transistor SW is turned on, the grayscale signal can be transmitted to the second electrode E2 through the data line, the source SE, the semiconductor layer SM, and the drain DE, but not limited thereto. For example, the second conductive layer CL2 can be an opaque metal layer including metal, but not limited thereto.

As shown in FIG. 1 , the circuit element layer 120 may include a second insulating layer IL2 disposed on the second conductive layer CL2.

As shown in FIG. 1 , the circuit element layer 120 may include a third conductive layer CL3, which is disposed on the second insulating layer IL2 and the second conductive layer CL2 (i.e., the second insulating layer IL2 is disposed between the second conductive layer CL2 and the third conductive layer CL3), wherein at least a portion of the second insulating layer IL2 may be used to separate at least a portion of the second conductive layer CL2 from at least a portion of the third conductive layer CL3. In the present invention, the third conductive layer CL3 may include any suitable structure as required. As shown in FIG. 1 , the third conductive layer CL3 of the present embodiment may include a third electrode E3, wherein the third electrode E3 may be used to receive a common signal, for example, but not limited thereto. Optionally, the third conductive layer CL3 may include a light blocking structure SS, which is disposed on the channel layer CN (semiconductor layer SM) of the thin film transistor SW to reduce the probability of light irradiating the semiconductor layer SM so that the thin film transistor SW can operate normally, wherein the light blocking structure SS may be floating, for example. For example, the third conductive layer CL3 may be an opaque metal layer including metal, but is not limited thereto.

In FIG. 1 , the second electrode E2 of the second conductive layer CL2, the third electrode E3 of the third conductive layer CL3, and the second insulating layer IL2 sandwiched between the second electrode E2 and the third electrode E3 can form a capacitor Cst (i.e., the capacitor Cst includes the second electrode E2, the third electrode E3 and a portion of the second insulating layer IL2), wherein the capacitor Cst can be electrically connected to the thin film transistor SW.

As shown in FIG. 1 , the circuit element layer 120 may include a third insulating layer IL3 disposed on the third conductive layer CL3. Optionally, the circuit element layer 120 may include a fourth insulating layer IL4 disposed on the third insulating layer IL3. For example, the fourth insulating layer IL4 may have a planarization effect, but is not limited thereto. In this embodiment, the material of each insulating layer may be designed according to requirements, and the materials of each insulating layer may be the same or different. For example, the material of the first insulating layer IL1 (eg, silicon oxide) may be different from the material of the second insulating layer IL2 (eg, silicon nitride), the material of the second insulating layer IL2 may be the same as the material of the third insulating layer IL3, and the material of the third insulating layer IL3 may be different from the material of the fourth insulating layer IL4 (eg, organic insulating material), but is not limited thereto.

As shown in FIG. 1, the circuit element layer 120 may include a fourth conductive layer CL4, which is disposed on the third conductive layer CL3, the third insulating layer IL3 and the fourth insulating layer IL4 (i.e., the third insulating layer IL3 and the fourth insulating layer IL4 are disposed between the third conductive layer CL3 and the fourth conductive layer CL4), wherein the fourth conductive layer CL4 is used to reflect external light to generate reflected light, and this reflected light is used to display the image. In FIG. 1, the fourth conductive layer CL4 can be electrically connected to the second electrode E2 of the second conductive layer CL2 by, for example, a connection hole H passing through the second insulating layer IL2, the third insulating layer IL3 and the fourth insulating layer IL4, but is not limited thereto. For example, the fourth conductive layer CL4 may be an opaque metal layer including metal and has a good light reflection effect, but is not limited thereto.

Optionally, the circuit element layer 120 may include a fifth conductive layer CL5 disposed between the fourth conductive layer CL4 and the fourth insulating layer IL4 (i.e., the fifth conductive layer CL5 is disposed between the fourth conductive layer CL4 and the third insulating layer IL3), wherein the fifth conductive layer CL5 may include a transparent conductive material (e.g., indium tin oxide). In FIG. 1 , the fifth conductive layer CL5 may be electrically connected to the second electrode E2 of the second conductive layer CL2 through a connection hole H passing through the second insulating layer IL2, the third insulating layer IL3, and the fourth insulating layer IL4. For example, in FIG. 1 , the fifth conductive layer CL5 may directly contact the second electrode E2 of the second conductive layer CL2 , and the fourth conductive layer CL4 may be electrically connected to the second electrode E2 of the second conductive layer CL2 through the fifth conductive layer CL5 , but the present invention is not limited thereto.

In this embodiment, the reflective display device 100 may include a display medium layer (not shown), which is disposed at a suitable position in the reflective display device 100. For example, the display medium layer may be disposed between the circuit element layer 120 of the first substrate 110 and the second substrate, but not limited thereto. For example, the display medium layer may be disposed between the fourth conductive layer CL4 and the second substrate, but not limited thereto.

The display medium layer may include suitable materials corresponding to the type of the reflective display device 100, such as liquid crystal molecules, colloid materials for electrophoresis, or other suitable display medium materials, but is not limited thereto. The display medium material included in the display medium layer may be adjusted in any suitable manner to adjust the state (e.g., light transmittance) of the portion of the display medium layer corresponding to each sub-pixel. For example, in some embodiments, the light transmittance of the display medium layer may be controlled by an electric field and/or an electrical signal.

In the present invention, the electrodes for controlling the state of the display medium layer can be designed according to the requirements. For example, multiple electrodes for controlling the display medium layer can be arranged on opposite sides of the display medium layer (i.e., the display medium layer is arranged between the electrodes), but the invention is not limited thereto. For example, multiple electrodes for controlling the display medium layer can be arranged on the same side of the display medium layer, but the invention is not limited thereto. For example, the fourth conductive layer CL4 shown in FIG. 1 can include electrodes for controlling the display medium layer, but the invention is not limited thereto. It should be noted that each sub-pixel may include at least two electrodes for controlling the display medium layer so that the light transmittance of the portion of the display medium layer corresponding to the sub-pixel can be adjusted according to the electrical signal (such as a grayscale signal) received by the electrode, but the present invention is not limited thereto.

The reflective display device 100 may also include any suitable film layer and/or structure as required. In some embodiments, the reflective display device 100 may include an opposing conductive layer, which is disposed on the second substrate, so that the display medium layer is disposed between the fourth conductive layer CL4 of the circuit element layer 120 and the opposing conductive layer, but the invention is not limited thereto. For example, the light transmittance of the display medium layer may be controlled by the electrodes in the fourth conductive layer CL4 and the electrodes in the opposing conductive layer, but the invention is not limited thereto. For example, the electrodes in the fourth conductive layer CL4 may receive a grayscale signal, and the electrodes in the opposing conductive layer may receive a common signal to control the light transmittance of the display medium layer, but the invention is not limited thereto. For example, the opposing conductive layer may include a transparent conductive material, but the invention is not limited thereto.

In some embodiments, the reflective display device 100 may further include a color conversion layer disposed on the second substrate to convert or filter light into light of different colors. The color conversion layer may include, for example, a color filter, a quantum dot (QD) material, a fluorescence material, a phosphorescence material, other suitable materials or any combination thereof. When the reflective display device 100 is a color display, the color conversion layer may include a plurality of color conversion parts (e.g., three color conversion parts), which are respectively located in sub-pixels of different colors to convert light of corresponding colors, but is not limited thereto.

In some embodiments, the reflective display device 100 may further include an optical film layer, such as an anti-reflection film, a brightness enhancement film, a light scattering layer, a wave plate, a polarizer, or other suitable optical film layers, and these optical film layers may be disposed at suitable positions according to respective requirements.

In the present invention, external light is used as the light source of the reflective display device 100, wherein the external light can be reflected by the fourth conductive layer CL4 to form light for displaying a picture (hereinafter, the light for displaying a picture reflected by the fourth conductive layer CL4 is referred to as picture display light). In detail, in FIG. 1, external light can be incident on the reflective display device 100 from the upper side shown in FIG. 1 (e.g., the side of the second substrate opposite to the first substrate 110, and the side of the fourth conductive layer CL4 opposite to the first substrate 110) from top to bottom. Then, the light incident on the reflective display device 100 passes through the second substrate and the display medium layer in sequence and is reflected by the fourth conductive layer CL4 to form a picture display light. Then, the picture display light is emitted from the reflective display device 100 from bottom to top in FIG. 1 (e.g., passes through the display medium layer and the second substrate in sequence) to display the picture. It should be noted that, since the light transmittance of the display medium layer is adjusted according to the electrical signal (e.g., grayscale signal) received by the electrode in the corresponding sub-pixel, the screen display light emitted from the reflective display device 100 will have a brightness corresponding to the electrical signal (e.g., grayscale signal) received by the electrode in the corresponding sub-pixel due to the influence of the light transmittance of the display medium layer in the corresponding sub-pixel, so as to display the screen.

In order to increase the capacitance value of the capacitor Cst to improve the driving capability (e.g., low-frequency driving capability) and/or display quality, the present invention designs the electrodes in the conductive layer of the circuit element layer 120. As shown in FIG. 1, the first electrode E1 includes a plurality of first island structures IS1 electrically connected to each other in cross section, the second electrode E2 includes a plurality of second island structures IS2 electrically connected to each other in cross section, and the third electrode E3 includes a plurality of third island structures IS3 electrically connected to each other in cross section, wherein one of the first island structures IS1, one of the second island structures IS2, and one of the third island structures IS3 overlap in direction Z (the normal direction of the first substrate 110). In other words, the first island structure IS1 and the second island structure IS2 overlap one-to-one in the direction Z, the first island structure IS1 and the third island structure IS3 overlap one-to-one in the direction Z, and the second island structure IS2 and the third island structure IS3 overlap one-to-one in the direction Z.

In order to make the island structures in the electrode electrically connected to each other, the present invention provides two electrode designs, but the electrode designs of the present invention are not limited thereto. As shown in FIG. 2, two designs of an electrode EC having an island structure are depicted, and these two designs can be applied to the first electrode E1, the second electrode E2, and the third electrode E3. In the first design DSN1 of FIG. 2, the electrode EC may include a plurality of island structures IS and a plurality of connecting portions LS, each connecting portion LS is connected between two adjacent island structures IS in a top view, and the plurality of island structures IS are connected to each other through the plurality of connecting portions LS, and the upper surface of the connecting portion LS is between the upper surface of the island structure IS and the first substrate 110 (see FIG. 4, FIG. 7, and FIG. 8). In the second design DSN2 of FIG. 2, the electrode EC may include a plurality of island structures IS and a connecting portion LS, the connecting portion LS being disposed on one side of the plurality of island structures IS in a top view, and the connecting portion LS connecting the plurality of island structures IS. It should be noted that the width of the island structures IS and the spacing between the island structures IS may be designed according to requirements, the width of the island structures IS may be the same or different, and the spacing between the island structures IS may be the same or different. In some embodiments, on the cross-section of the island structure IS, the angle between the side wall of the island structure IS and the surface of the first substrate 110 (the horizontal plane formed by the direction X and the direction Y) may be 20 degrees to 50 degrees (see FIG. 4, and FIG. 7 to FIG. 10), but is not limited thereto.

Please refer to FIG. 3 and FIG. 4, FIG. 3 is a cross-sectional schematic diagram of the reflective display device of the first embodiment of the present invention, and FIG. 4 is a top view schematic diagram of the reflective display device of the first embodiment of the present invention, wherein FIG. 3 and FIG. 4 illustrate an embodiment of the region where the first electrode E1, the second electrode E2, and the third electrode E3 are disposed in FIG. 1. In FIG. 3 and FIG. 4, the first electrode E1, the second electrode E2, and the third electrode E3 may all use the first design DSN1 shown in FIG. 2. Therefore, the first electrode E1 may include a plurality of first connecting portions LS1, each of which is connected between two adjacent first island structures IS1 in a plan view, and the plurality of first island structures IS1 are connected to each other through the plurality of first connecting portions LS1, and the upper surface of the first connecting portion LS1 is between the upper surface of the first island structure IS1 and the first substrate 110; the second electrode E2 may include a plurality of second connecting portions LS2, each of which is connected between two adjacent second island structures IS2 in a plan view, and the plurality of second island structures IS1 are connected to each other through the plurality of first connecting portions LS1. The third electrode E3 may include a plurality of third connecting portions LS3, each of which is connected between two adjacent third island-shaped structures IS3 in a top view, and a plurality of third island-shaped structures IS3 are connected to each other through a plurality of third connecting portions LS3, and the upper surface of the third connecting portion LS3 is between the upper surface of the third island-shaped structure IS3 and the first substrate 110. For example, in FIG. 4, the thickness of the first connecting portion LS1 of the first electrode E1 is less than the thickness of the first island-shaped structure IS1 of the first electrode E1, but the present invention is not limited thereto.

Since the second electrode E2 has the second island structure IS2 and the third electrode E3 has the third island structure IS3, the contact area between the second electrode E2 and the second insulating layer IL2 and the contact area between the third electrode E3 and the second insulating layer IL2 are increased, so that the capacitance value of the capacitor Cst including the second electrode E2 and the third electrode E3 is increased. In some embodiments, in the same setting space (same top view area), relative to a traditional parallel plate capacitor including an electrode without an island structure, the contact area between the electrode and the insulating layer of the capacitor Cst designed by the present invention can be increased by 1% to 5%, so that the capacitance value can be increased by at least 1% to 5%. For example, in the same setting space (same top-view area), the capacitance value of the capacitor Cst of this embodiment is 2.59% higher than the capacitance value of the traditional parallel plate capacitor, but the present invention is not limited thereto.

In addition, in Figure 4, the portion of the first insulating layer IL1 located between the first electrode E1 and the second electrode E2 also has an insulating island structure ISna and an insulating connecting portion LSna, the portion of the second insulating layer IL2 located between the second electrode E2 and the third electrode E3 also has an insulating island structure ISnb and an insulating connecting portion LSnb, and the portion of the third insulating layer IL3 located between the third electrode E3 and the fourth insulating layer IL4 also has an insulating island structure ISnc and an insulating connecting portion LSnc, but is not limited to this.

Please refer to FIG. 5 and FIG. 6, and refer to FIG. 1 and FIG. 4 at the same time. FIG. 5 is a flow chart of the manufacturing method of the reflective display device of the first embodiment of the present invention, and FIG. 6 is a flow chart of the patterning of the first conductive layer in the first embodiment of the present invention. FIG. 1 and FIG. 4 are the first substrate 110 and the circuit element layer 120 of the reflective display device 100 of the first embodiment of the present invention after the manufacturing method is completed. It should be noted that the manufacturing method of the present invention is not limited to the following text and the attached figures. In some embodiments, any other suitable steps may be added before or after one of the existing steps of the manufacturing method, and/or some steps may be performed simultaneously or separately.

In the following manufacturing methods, the process of forming the film layer and/or structure may include atomic layer deposition (ALD), chemical vapor deposition (CVD), coating process, other suitable processes or combinations thereof. The patterning process may include, for example, a photolithography process, any other suitable process or combinations thereof. The etching process may be a wet etching process, a dry etching process, any other suitable etching process or combinations thereof.

As shown in FIG. 5 , in step ST1, a first conductive layer CL1 is formed on the first substrate 110, wherein step ST1 can be performed by a forming process. As shown in FIG. 5 , in step ST2, the first conductive layer CL1 is patterned to form a first electrode E1 including a plurality of first island structures IS1 in the first conductive layer CL1, wherein the first island structures IS1 are electrically connected to each other. In this embodiment, step ST2 can be performed by a patterning process.

In the present embodiment, FIG. 6 shows the detailed steps of patterning the first conductive layer CL1 described in step ST2. As shown in FIG. 6, in step ST2a, a photoresist layer is formed on the first conductive layer CL1, wherein step ST2a can be performed through a formation process. Then, according to step ST2b of FIG. 6, the photoresist layer is exposed with a half-tone mask, so that the photoresist layer can be divided into a first portion, a second portion, and a third portion according to the exposure situation. For example, if the photoresist layer includes a positive photoresist material, the first portion will be irradiated with light having a higher light intensity, the second portion will be irradiated with light having a lower light intensity, and the third portion will not be irradiated with light, but it is not limited thereto. For example, if the photoresist layer includes a negative photoresist material, the first portion is not irradiated with light, the second portion is irradiated with light having a lower light intensity, and the third portion is irradiated with light having a higher light intensity, but the present invention is not limited thereto. For example, the second portion of the photoresist layer corresponds to and overlaps with a portion of the first electrode E1 used as the first connecting portion LS1 in the direction Z, and the third portion of the photoresist layer corresponds to and overlaps with a portion of the first electrode E1 used as the first island structure IS1 in the direction Z, but the present invention is not limited thereto.

As shown in FIG. 6 , in step ST2c, a first developing process is performed to remove the first portion of the photoresist layer and leave the second portion and the third portion of the photoresist layer. For example, in some embodiments, after the first developing process is performed, the thickness of the second portion of the photoresist layer may be less than the thickness of the third portion of the photoresist layer, but the present invention is not limited thereto.

As shown in FIG. 6 , in step ST2d, a first etching process is performed to remove the portion of the first conductive layer CL1 corresponding to the first portion. For example, after the first etching process, the outer contour of the first electrode E1 can be defined, and the gate GE and the scanning line (conductive trace) separated from the first electrode E1 can be formed, but not limited thereto.

As shown in FIG6 , in step ST2e, a second developing process is performed to remove the second portion of the photoresist layer and leave the third portion of the photoresist layer. For example, after the second developing process, the portion of the first electrode E1 used as the first connection portion LS1 is exposed.

As shown in FIG. 6 , in step ST2f, a second etching process is performed to thin the portion of the first conductive layer CL1 corresponding to the second portion, so that a plurality of first island structures IS1 and a plurality of first connecting portions LS1 are formed in the first conductive layer CL1. The second etching process etches the portion of the first electrode E1 used as the first connecting portion LS1 to reduce its thickness, so that the first connecting portion LS1 is formed by the second etching process. The second etching process may not etch the portion of the first electrode E1 used as the first island structure IS1, so that the thickness of the first island structure IS1 is greater than the thickness of the first connecting portion LS1. Thereafter, the photoresist layer is removed (i.e., the third portion of the photoresist layer is removed) to complete the patterning process of the first conductive layer CL1.

As shown in FIG. 5 , in step ST3 , a first insulating layer IL1 is formed on the first conductive layer CL1 , wherein step ST3 may be performed by a forming process. Optionally, after the step of forming the first insulating layer IL1 , an etching process of the first insulating layer IL1 may be further included, but not limited thereto. Since the first insulating layer IL1 is disposed on the first conductive layer CL1, a portion of the first island structure IS1 in the first insulating layer IL1 corresponding to and overlapping the first electrode E1 in the direction Z can become a protruding insulating island structure ISna, and a portion of the first connecting portion LS1 in the first insulating layer IL1 corresponding to and overlapping the first electrode E1 in the direction Z can become a concave insulating connecting portion LSna.

As shown in FIG. 5, in step ST4, a second conductive layer CL2 is formed on the first insulating layer IL1, wherein step ST4 can be performed by a forming process. As shown in FIG. 5, in step ST5, the second conductive layer CL2 is patterned to form a second electrode E2 including a plurality of second island structures IS2 in the second conductive layer CL2, wherein the second island structures IS2 are electrically connected to each other. In this embodiment, step ST5 can be performed by a patterning process. Since the second conductive layer CL2 is disposed on the first conductive layer CL1, the portion of the first island structure IS1 in the second electrode E2 of the second conductive layer CL2 corresponding to and overlapping the first electrode E1 in the direction Z may become a protruding second island structure IS2, and the portion of the first connecting portion LS1 in the second electrode E2 of the second conductive layer CL2 corresponding to and overlapping the first electrode E1 in the direction Z may become a recessed second connecting portion LS2. For example, the thickness of the second island structure IS2 may be the same as the thickness of the second connecting portion LS2, but the invention is not limited thereto. For example, in the patterning process of the second conductive layer CL2, the second conductive layer CL2 may be subjected to only one etching process, but the invention is not limited thereto.

As shown in FIG. 5 , in step ST6 , a second insulating layer IL2 is formed on the second conductive layer CL2 , wherein step ST6 can be performed by a forming process. Optionally, after the step of forming the second insulating layer IL2 , an etching process of the second insulating layer IL2 can also be included, but not limited thereto. Since the second insulating layer IL2 is arranged on the second conductive layer CL2, the portion of the second island structure IS2 in the second insulating layer IL2 corresponding to and overlapping the second electrode E2 in the direction Z can become a protruding insulating island structure ISnb, and the portion of the second connecting portion LS2 in the second insulating layer IL2 corresponding to and overlapping the second electrode E2 in the direction Z can become a concave insulating connecting portion LSnb.

As shown in FIG. 5 , in step ST7, a third conductive layer CL3 is formed on the second insulating layer IL2 , wherein step ST7 can be performed by a forming process. As shown in FIG. 5 , in step ST8, the third conductive layer CL3 is patterned to form a third electrode E3 including a plurality of third island structures IS3 in the third conductive layer CL3 , wherein the third island structures IS3 are electrically connected to each other. In this embodiment, step ST8 can be performed by a patterning process. Since the third conductive layer CL3 is disposed on the second conductive layer CL2, the portion of the second island structure IS2 in the third electrode E3 of the third conductive layer CL3 that corresponds to and overlaps the second electrode E2 in the direction Z may become a protruding third island structure IS3, and the portion of the second connection portion LS2 in the third electrode E3 of the third conductive layer CL3 that corresponds to and overlaps the second electrode E2 in the direction Z may become a recessed third connection portion LS3. For example, the thickness of the third island structure IS3 may be the same as the thickness of the third connection portion LS3, but the invention is not limited thereto. For example, in the patterning process of the third conductive layer CL3, the third conductive layer CL3 may be subjected to only one etching process, but the invention is not limited thereto.

Thereafter, as shown in FIGS. 1 and 4 , a third insulating layer IL3 (including an insulating island structure ISnc and an insulating connecting portion LSnc), a fourth insulating layer IL4, a fifth conductive layer CL5 (or a patterned fifth conductive layer CL5) and a fourth conductive layer CL4 (or a patterned fourth conductive layer CL4) are sequentially formed on the third conductive layer CL3 to complete the circuit element layer 120 of the reflective display device 100 of this embodiment. Optionally, after the step of forming the third insulating layer IL3, an etching process for the third insulating layer IL3 may be included; after the step of forming the fourth insulating layer IL4, an etching process for the fourth insulating layer IL4 may be included; after the step of forming the fifth conductive layer CL5, an etching process for the fifth conductive layer CL5 may be included; after the step of forming the fourth conductive layer CL4, an etching process for the fourth conductive layer CL4 may be included, but it is not limited to this.

The reflective display device and the manufacturing method thereof of the present invention are not limited to the above-mentioned embodiments. Other embodiments will be disclosed below. However, in order to simplify the description and highlight the differences between each embodiment and the above-mentioned embodiment, the same reference numerals are used below to mark the same elements, and the repeated parts will not be described in detail.

Please refer to FIG. 7, which is a cross-sectional schematic diagram of a reflective display device of the second embodiment of the present invention. As shown in FIG. 7, the difference between the present embodiment and the first embodiment lies in the design of the third electrode E3 of the reflective display device 200. In FIG. 7, the first electrode E1 and the second electrode E2 use the first design DSN1 shown in FIG. 2, and the third electrode E3 uses the second design DSN2 shown in FIG. 2. Therefore, the third electrode E3 may include a third connecting portion LS3, which is arranged on one side of the plurality of third island structures IS3 in a top view, and the third connecting portion LS3 connects the plurality of third island structures IS3.

In the manufacturing method, the third electrode E3 can be formed through step ST7 (forming the third conductive layer CL3 on the second insulating layer IL2) and step ST8 (patterning the third conductive layer CL3 to form a third electrode E3 including a plurality of third island structures IS3 in the third conductive layer CL3, wherein the third island structures IS3 are electrically connected to each other) as shown in FIG. 5. For example, in the patterning process of the third conductive layer CL3, only one etching process can be performed on the third conductive layer CL3, but the present invention is not limited thereto.

Please refer to FIG. 8, which is a cross-sectional schematic diagram of a reflective display device of the third embodiment of the present invention. As shown in FIG. 8, the difference between this embodiment and the first embodiment lies in the design of the first electrode E1 of the reflective display device 300. In FIG. 8, the second electrode E2 and the third electrode E3 use the first design DSN1 shown in FIG. 2, and the first electrode E1 uses the second design DSN2 shown in FIG. 2. Therefore, the first electrode E1 may include a first connecting portion LS1, which is arranged on one side of the plurality of first island structures IS1 in a top view, and the first connecting portion LS1 connects the plurality of first island structures IS1.

In the manufacturing method, the first electrode E1 may be formed through step ST1 (forming the first conductive layer CL1 on the first substrate 110) and step ST2 (patterning the first conductive layer CL1 to form the first electrode E1 including a plurality of first island structures IS1 in the first conductive layer CL1, wherein the first island structures IS1 are electrically connected to each other) as shown in FIG. In this embodiment, the step of patterning the first conductive layer CL1 may be different from the step of patterning the first conductive layer CL1 of the first embodiment (i.e., different from the step shown in FIG. 6). For example, the step of patterning the first conductive layer CL1 of the present embodiment may use a general mask instead of a half-tone mask, and in the patterning process of the first conductive layer CL1, only one etching process may be performed on the first conductive layer CL1 (i.e., the first conductive layer CL1 may be patterned through a single etching process to form the outer contour of the first electrode E1 and the first island structure IS1 and the first connecting portion LS1), but is not limited to this.

In FIG. 8 , the insulating connection portion LSna of the first insulating layer IL1, the second connection portion LS2 of the second electrode E2 of the second conductive layer CL2, the insulating connection portion LSnb of the second insulating layer IL2, the third connection portion LS3 of the third electrode E3 of the third conductive layer CL3, and the insulating connection portion LSnc of the third insulating layer IL3 all correspond in direction Z and overlap the gap between the first island structures IS1 of the first electrode E1.

Please refer to FIG. 9, which is a cross-sectional schematic diagram of a reflective display device of the fourth embodiment of the present invention. As shown in FIG. 9, the difference between this embodiment and the third embodiment lies in the design of the third electrode E3 of the reflective display device 400. In FIG. 9, the second electrode E2 uses the first design DSN1 shown in FIG. 2, and the first electrode E1 and the third electrode E3 use the second design DSN2 shown in FIG. 2. Therefore, the third electrode E3 may include a third connecting portion LS3, which is arranged on one side of the plurality of third island structures IS3 in a top view, and the third connecting portion LS3 connects the plurality of third island structures IS3.

In the manufacturing method, the third electrode E3 can be formed through step ST7 (forming the third conductive layer CL3 on the second insulating layer IL2) and step ST8 (patterning the third conductive layer CL3 to form a third electrode E3 including a plurality of third island structures IS3 in the third conductive layer CL3, wherein the third island structures IS3 are electrically connected to each other) as shown in FIG. 5. For example, in the patterning process of the third conductive layer CL3, only one etching process can be performed on the third conductive layer CL3, but the present invention is not limited thereto.

It should be noted that in some variant embodiments, the second electrode E2 of the above embodiment can be modified to use the second design DSN2 shown in FIG. 2 according to needs, but the present invention is not limited thereto.

Please refer to FIG. 10, which is a cross-sectional schematic diagram of a reflective display device of the fifth embodiment of the present invention. As shown in FIG. 10, the difference between this embodiment and the first embodiment lies in the design of the first electrode E1, the first insulating layer IL1, the second electrode E2, and the second insulating layer IL2 of the reflective display device 500. In FIG. 10, the first electrode E1 may be a flat electrode without the first island structure IS1 and the first connecting portion LS1, and the second electrode E2 may be a flat electrode without the second island structure IS2 and the second connecting portion LS2. In FIG. 10, the first insulating layer IL1 may not have an insulating island structure and an insulating connecting portion. In FIG. 10 , the second insulating layer IL2 may have an insulating island structure ISnb, and may have a plurality of insulating connecting portions LSnb having a thickness less than that of the insulating island structure ISnb and located between two insulating island structures ISnb as required, wherein the insulating connecting portion LSnb connects two adjacent insulating island structures ISnb.

In Figure 10, since the third conductive layer CL3 is arranged on the second insulating layer IL2, the portion of the insulating island structure ISnb in the third electrode E3 of the third conductive layer CL3 corresponding to and overlapping the second insulating layer IL2 in the direction Z can become a protruding third island structure IS3, and the portion of the insulating connection portion LSnb in the third electrode E3 of the third conductive layer CL3 corresponding to and overlapping the second insulating layer IL2 in the direction Z can become a concave third connection portion LS3.

Accordingly, in this embodiment, as shown in FIG. 10 , the capacitor Cst includes a second electrode E2 that is a planar electrode and a third electrode E3 that has a third island structure IS3 , but is not limited thereto.

In the manufacturing method, the first electrode E1 may be formed through step ST1 (forming the first conductive layer CL1 on the first substrate 110) and step ST2 (patterning the first conductive layer CL1 to form the first electrode E1 including a plurality of first island structures IS1 in the first conductive layer CL1, wherein the first island structures IS1 are electrically connected to each other) as shown in FIG. In this embodiment, the step of patterning the first conductive layer CL1 may be different from the step of patterning the first conductive layer CL1 of the first embodiment (i.e., different from the step shown in FIG. 6). For example, the step of patterning the first conductive layer CL1 of the present embodiment may use a general mask instead of a half-tone mask, and in the patterning process of the first conductive layer CL1, only one etching process may be performed on the first conductive layer CL1 (i.e., the first conductive layer CL1 may be patterned with the outer contour of the first electrode E1 through one etching process), but the present invention is not limited thereto.

In this embodiment, after forming the second insulating layer IL2 and before forming the third conductive layer CL3 (i.e., between step ST6 and step ST7 in FIG. 5 ), the step of manufacturing the insulating island structure ISnb and the insulating connecting portion LSnb may be additionally included. For example, in this embodiment, the manufacturing method of the reflective display device 500 may further include the step shown in FIG. 11 after forming the second insulating layer IL2 and before forming the third conductive layer CL3, wherein FIG. 11 is a flow chart of manufacturing the second insulating layer IL2 in the fifth embodiment of the present invention.

As shown in FIG. 11 , in step ST6a, a photoresist layer is formed on the second insulating layer IL2, wherein step ST6a can be performed through a formation process. Then, according to step ST6b of FIG. 11 , the photoresist layer is exposed using a half-tone mask, so that the photoresist layer can be divided into a fourth portion, a fifth portion, and a sixth portion according to the exposure conditions. For example, the fifth portion of the photoresist layer corresponds to and overlaps the portion of the second insulating layer IL2 used as the insulating connection portion LSnb in the direction Z, and the sixth portion of the photoresist layer corresponds to and overlaps the portion of the second insulating layer IL2 used as the insulating island structure ISnb in the direction Z, but the present invention is not limited thereto.

As shown in FIG. 11, in step ST6c, a third developing process is performed to remove the fourth portion of the photoresist layer and leave the fifth and sixth portions of the photoresist layer. For example, in some embodiments, after the third developing process, the thickness of the fifth portion of the photoresist layer may be less than the thickness of the sixth portion of the photoresist layer, but is not limited thereto. Then, as shown in FIG. 11, in step ST6d, a third etching process is performed to remove the portion of the second insulating layer IL2 corresponding to the fourth portion.

As shown in FIG. 11, in step ST6e, a fourth developing process is performed to remove the fifth portion of the photoresist layer and leave the sixth portion of the photoresist layer. For example, after the fourth developing process, a portion of the second insulating layer IL2 used as the insulating connection portion LSnb is exposed.

As shown in FIG. 11, in step ST6f, a fourth etching process is performed to thin the portion of the second insulating layer IL2 corresponding to the fifth portion, so that a plurality of insulating island structures ISnb and a plurality of insulating connecting portions LSnb are formed in the second insulating layer IL2. The fourth etching process etches the portion of the second insulating layer IL2 used as the insulating connecting portion LSnb to reduce its thickness, so that the insulating connecting portion LSnb is formed by the fourth etching process. The fourth etching process may not etch into the portion of the second insulating layer IL2 used as the insulating island structure ISnb, so that the thickness of the insulating island structure ISnb is greater than the thickness of the insulating connecting portion LSnb. Thereafter, the photoresist layer is removed (ie, the sixth portion of the photoresist layer is removed) to complete the manufacturing of the second insulating layer IL2.

In summary, since the electrode of the capacitor of the present invention has an island structure, the surface area of the contact insulating layer in the electrode can be increased to increase the capacitance value of the capacitor, thereby improving the driving ability and/or display quality of the reflective display device. The above is only a preferred embodiment of the present invention, and all equivalent changes and modifications made according to the scope of the patent application of the present invention should fall within the scope of the present invention.

100,200,300,400,500: reflective display device 110: first substrate 120: circuit element layer CL1: first conductive layer CL2: second conductive layer CL3: third conductive layer CL4: fourth conductive layer CL5: fifth conductive layer CN: channel layer Cst: capacitor DE: drain DSN1: first design DSN2: second design E1: first electrode E2: second electrode E3: third electrode EC: electrode GE: gate H: connection hole IL1: first insulating layer IL2: second insulating layer IL3: third insulating layer IL4: fourth insulating layer IS: island structure IS1: first island structure IS2: second island structure IS3: third island structure ISna, ISnb, ISnc: insulating island structure LS: connection part LS1: first connection part LS2: second connection part LS3: third connection part LSna, LSnb, LSnc: insulating connection part SE: source SM: semiconductor layer SS: light blocking structure ST1, ST2, ST2a, ST2b, ST2c, ST2d, ST2e, ST2f, ST3, ST4, ST5, ST6, ST6a, ST6b, ST6c, ST6d, ST6e, ST6f, ST7, ST8: steps SW: thin film transistor X, Y, Z: directions

FIG. 1 is a schematic cross-sectional view of a reflective display device of an embodiment of the present invention. FIG. 2 is a schematic top view of two designs of an electrode having an island structure of the present invention. FIG. 3 is a schematic top view of a reflective display device of the first embodiment of the present invention. FIG. 4 is a schematic cross-sectional view of a reflective display device of the first embodiment of the present invention. FIG. 5 is a flow chart of a manufacturing method of a reflective display device of the first embodiment of the present invention. FIG. 6 is a flow chart of patterning a first conductive layer in the first embodiment of the present invention. FIG. 7 is a schematic cross-sectional view of a reflective display device of the second embodiment of the present invention. FIG. 8 is a schematic cross-sectional view of a reflective display device of the third embodiment of the present invention. FIG. 9 is a schematic cross-sectional view of a reflective display device of the fourth embodiment of the present invention. FIG. 10 is a schematic cross-sectional view of a reflective display device of the fifth embodiment of the present invention. FIG. 11 is a flow chart of the preparation of the second insulating layer in the fifth embodiment of the present invention.

100: Reflective display device

110: First substrate

CL1: First conductive layer

CL2: Second conductive layer

CL3: The third conductive layer

Cst: Capacitance

E1: First electrode

E2: Second electrode

E3: Third electrode

IL1: First insulation layer

IL2: Second insulation layer

IL3: Third insulation layer

IL4: Fourth Insulation Layer

IS1: The first island structure

IS2: Second island structure

IS3: The third island structure

ISna, ISnb, ISnc: Insulated island structure

LS1: First connection part

LS2: Second connection part

LS3: Third connection part

LSna,LSnb,LSnc: Insulation connection part

X,Y,Z: Direction

Claims (10)

A reflective display device comprises: a substrate; a first conductive layer disposed on the substrate, wherein the first conductive layer comprises a first electrode, the first electrode comprises a plurality of first island structures in cross section, and the plurality of first island structures are electrically connected to each other; a second conductive layer disposed on the first conductive layer, wherein the second conductive layer comprises a second electrode, the second electrode comprises a plurality of second island structures in cross section, and the plurality of second island structures are electrically connected to each other; a third conductive layer disposed on the second conductive layer, wherein the third conductive layer comprises a third electrode, the third electrode comprises a plurality of third island structures in cross section, and the plurality of third island structures are electrically connected to each other; and a capacitor comprising the second electrode and the third electrode; One of the first island structures, one of the second island structures, and one of the third island structures overlap in the normal direction of the substrate. A reflective display device as described in claim 1, wherein the first electrode includes a first connecting portion, the first connecting portion is arranged on one side of the multiple first island structures in a plan view, and the first connecting portion connects the multiple first island structures. A reflective display device as described in claim 1, wherein the first electrode includes a plurality of first connecting portions, each of the first connecting portions is connected between two adjacent first island structures in a top view, the plurality of first island structures are connected to each other through the plurality of first connecting portions, and the upper surfaces of the plurality of first connecting portions are between the upper surfaces of the plurality of first island structures and the substrate. A reflective display device as described in claim 1, wherein the first conductive layer includes a plurality of conductive traces, each of the conductive traces is electrically connected to a switch element, and the first electrode is insulated from the plurality of conductive traces. The reflective display device as described in claim 1, wherein the first electrode is used to receive a common signal. The reflective display device as described in claim 1 further comprises a first insulating layer, a second insulating layer, a third insulating layer, a fourth conductive layer, a fifth conductive layer and a connecting hole, wherein the first insulating layer is disposed between the first conductive layer and the second conductive layer, the second insulating layer is disposed between the second conductive layer and the third conductive layer, and the third insulating layer is disposed on the third conductive layer. The fourth conductive layer is disposed on the third insulating layer, the fifth conductive layer is disposed between the third insulating layer and the fourth conductive layer, the connecting hole passes through the second insulating layer and the third insulating layer, the fifth conductive layer is electrically connected to the second electrode of the second conductive layer through the connecting hole, and the fourth conductive layer is electrically connected to the second electrode of the second conductive layer through the fifth conductive layer. A method for manufacturing a reflective display device, comprising: forming a first conductive layer on a substrate; patterning the first conductive layer to form a first electrode including a plurality of first island structures in the first conductive layer, wherein the plurality of first island structures are electrically connected to each other; forming a first insulating layer on the first conductive layer; forming a second conductive layer on the first insulating layer; patterning the second conductive layer to form a second electrode including a plurality of second island structures in the second conductive layer, wherein the plurality of second island structures are electrically connected to each other; forming a second insulating layer on the second conductive layer; forming a third conductive layer on the second insulating layer; and The third conductive layer is patterned to form a third electrode including a plurality of third island structures in the third conductive layer, wherein the plurality of third island structures are electrically connected to each other; wherein the reflective display device includes a capacitor, and the capacitor includes the second electrode and the third electrode; wherein one of the plurality of first island structures, one of the plurality of second island structures, and one of the plurality of third island structures overlap in the normal direction of the substrate. The manufacturing method as described in claim 7, wherein the step of patterning the first conductive layer includes: forming a photoresist layer on the first conductive layer; exposing the photoresist layer with a half-tone mask; performing a first development process to remove a first portion of the photoresist layer; performing a first etching process to remove a portion of the first conductive layer corresponding to the first portion; performing a second development process to remove a second portion of the photoresist layer; and performing a second etching process to thin the portion of the first conductive layer corresponding to the second portion, so that the plurality of first island structures are formed in the first conductive layer. A manufacturing method as described in claim 8, wherein the first electrode includes a plurality of first connecting portions, each of the first connecting portions is connected between two adjacent first island structures in a top view, the plurality of first island structures are connected to each other through the plurality of first connecting portions, the upper surfaces of the plurality of first connecting portions are between the upper surfaces of the plurality of first island structures and the substrate, and the plurality of first connecting portions are formed by the second etching process. In the manufacturing method as described in claim 8, the photoresist layer further includes a third portion, and after the first developing process, the thickness of the second portion is less than the thickness of the third portion.