TW202412569A - Pattern forming method and firing device - Google Patents

Pattern forming method and firing device Download PDF

Info

Publication number
TW202412569A
TW202412569A TW111132943A TW111132943A TW202412569A TW 202412569 A TW202412569 A TW 202412569A TW 111132943 A TW111132943 A TW 111132943A TW 111132943 A TW111132943 A TW 111132943A TW 202412569 A TW202412569 A TW 202412569A
Authority
TW
Taiwan
Prior art keywords
fixing plate
resin substrate
pattern
paste
forming method
Prior art date
Application number
TW111132943A
Other languages
Chinese (zh)
Inventor
大島真吾
池田英樹
Original Assignee
日商小森公司
Filing date
Publication date
Application filed by 日商小森公司 filed Critical 日商小森公司
Publication of TW202412569A publication Critical patent/TW202412569A/en

Links

Images

Abstract

本案提供一種圖案形成方法,係將形成有由金屬糊做成的糊圖案(112)的樹脂基板(111)固定於固定板(101)上,該固定板(101)係由每單位體積的熱容量為3000[kJ/m 3・K]以上且熱導率為45[W/m・K]以上的金屬構成,並且對固定於固定板(101)的樹脂基板(111)上所形成的糊圖案(112)照射從光源(102)射出的近紅外線來將糊圖案(112)進行燒成,而於樹脂基板(111)上形成導電性圖案。所照射之近紅外線的峰值波長區域定為0.8~1.7μm。 The present invention provides a pattern forming method, wherein a resin substrate (111) formed with a paste pattern (112) made of metal paste is fixed on a fixing plate (101), wherein the fixing plate (101) is made of a metal having a heat capacity per unit volume of 3000 [kJ/m 3 ·K] or more and a thermal conductivity of 45 [W/m·K] or more, and the paste pattern (112) formed on the resin substrate (111) fixed on the fixing plate (101) is irradiated with near-infrared rays emitted from a light source (102) to burn the paste pattern (112), thereby forming a conductive pattern on the resin substrate (111). The peak wavelength region of the irradiated near-infrared rays is set to 0.8-1.7 μm.

Description

圖案形成方法及燒成裝置Pattern forming method and firing device

發明領域 本發明關於一種圖案形成方法及燒成裝置。 Field of the invention The present invention relates to a pattern forming method and a firing device.

發明背景 在印刷配線基板等印刷型電子產品(printed electronics)領域中,針對於樹脂基板形成配線進行廣泛研究,例如已開發透過絲網印刷等而形成配線圖案的技術。此種配線基板的製造上,有形成圖案步驟、加熱(燒成)步驟等。此種加熱一般以利用紅外線等的燈退火(lamp annealing)為主流(參照專利文獻1)。 Background of the invention In the field of printed electronics such as printed wiring boards, extensive research has been conducted on forming wiring on resin substrates. For example, a technology for forming wiring patterns by screen printing has been developed. The production of such wiring boards includes a pattern forming step and a heating (firing) step. Such heating is generally performed by lamp annealing using infrared rays or the like (see Patent Document 1).

先前技術文獻 專利文獻 專利文獻1:日本專利第4956696號公報 Prior art documents Patent documents Patent document 1: Japanese Patent No. 4956696

發明概要 發明欲解決之課題 再說,現在所使用的印刷配線基板有很多採用了可撓性基板。聚對苯二甲酸乙二酯(PET)、聚萘二甲酸乙二酯(PEN)等樹脂已被用作此種可撓性基板的材料。此種材料耐熱性低,因此習知的紅外線照射加熱無法提高照射強度。若提高照射強度來實施燒成,則樹脂基板會變形,此外,還有形成的圖案剝落等的問題。因此,在習知技術來說,就有因為以低照射強度進行處理所以燒成步驟需要許多時間這樣的問題。 Summary of the invention Problems to be solved by the invention In addition, many printed wiring boards currently used use flexible substrates. Resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN) have been used as materials for such flexible substrates. Such materials have low heat resistance, so the conventional infrared irradiation heating cannot increase the irradiation intensity. If the irradiation intensity is increased to perform calcination, the resin substrate will deform, and there will also be problems such as the formed pattern peeling off. Therefore, in the conventional technology, there is a problem that the calcination step requires a lot of time because the treatment is performed at a low irradiation intensity.

本發明係為了解除如上所述問題點所作者,目的在於即便使用低耐熱性樹脂做成的基板,亦能以更短時間來實施導電性糊的燒成。The present invention is made to solve the above-mentioned problems, and its purpose is to enable the conductive paste to be fired in a shorter time even when a substrate made of a low heat-resistant resin is used.

用以解決課題之手段 本發明之圖案形成方法係將形成有由導電性糊做成的糊圖案的樹脂基板固定於固定板上,該固定板係由每單位體積的熱容量為3000[kJ/m 3・K]以上且熱導率為45[W/m・K]以上的金屬構成,並且對固定於固定板之樹脂基板上所形成的糊圖案照射近紅外線來將糊圖案進行燒成,而於樹脂基板上形成導電性圖案。 Means for Solving the Problem The pattern forming method of the present invention is to fix a resin substrate on which a paste pattern made of a conductive paste is formed on a fixing plate, wherein the fixing plate is made of a metal having a heat capacity per unit volume of 3000 [kJ/m 3・K] or more and a thermal conductivity of 45 [W/m・K] or more, and irradiate the paste pattern formed on the resin substrate fixed on the fixing plate with near-infrared rays to burn the paste pattern, thereby forming a conductive pattern on the resin substrate.

於上述圖案形成方法的一構成例中,近紅外線的峰值波長區域定為0.8~1.7μm。In one configuration example of the above-mentioned pattern forming method, the peak wavelength region of the near-infrared ray is set to 0.8-1.7 μm.

於上述圖案形成方法的一構成例中,樹脂基板係透過固定機構而固定於固定板。In one configuration example of the pattern forming method, the resin substrate is fixed to the fixing plate by a fixing mechanism.

於上述圖案形成方法的一構成例中,固定機構係用以將樹脂基板固定於固定板的黏著層。In one configuration example of the pattern forming method, the fixing mechanism is used to fix the resin substrate to the adhesive layer of the fixing plate.

本發明之燒成裝置具備:固定板,其係由每單位體積的熱容量為3000[kJ/m 3・K]以上且熱導率為45[W/m・K]以上的金屬構成;及光源,其係對固定於固定板上且形成有由導電性糊做成的糊圖案的樹脂基板的糊圖案照射近紅外線。 The sintering device of the present invention comprises: a fixing plate, which is made of a metal having a heat capacity per unit volume of 3000 [kJ/m 3 ·K] or more and a thermal conductivity of 45 [W/m·K] or more; and a light source, which irradiates a near-infrared ray to a paste pattern of a resin substrate fixed to the fixing plate and formed with a paste pattern made of a conductive paste.

在上述燒成裝置的一構成例中,近紅外線的峰值波長區域定為0.8~1.7μm。In one configuration example of the above-mentioned sintering device, the peak wavelength region of the near-infrared ray is set to 0.8~1.7μm.

在上述燒成裝置的一構成例中,具備:用以將樹脂基板固定於固定板的固定機構。In one configuration example of the above-mentioned sintering device, there is provided: a fixing mechanism for fixing the resin substrate to a fixing plate.

在上述燒成裝置的一構成例中,於燒成裝置中,固定機構係由黏著層構成。In one configuration example of the above-mentioned sintering device, in the sintering device, the fixing mechanism is composed of an adhesive layer.

發明效果 如以上說明般,依據本發明,係在由每單位體積的熱容量為3000[kJ/m 3・K]以上且熱導率為45[W/m・K]以上的金屬構成的固定板上照射近紅外線來實施燒成,因此即便使用低耐熱性樹脂做成的基板,亦能以更短時間來實施導電性糊的燒成。 Effects of the Invention As described above, according to the present invention, near-infrared rays are irradiated on a fixing plate made of a metal having a heat capacity per unit volume of 3000 [kJ/m 3・K] or more and a thermal conductivity of 45 [W/m・K] or more to perform sintering, so that even if a substrate made of a low heat-resistant resin is used, the conductive paste can be sintered in a shorter time.

用以實施發明之形態 以下,參照圖1針對本發明實施形態之燒成裝置進行說明。該燒成裝置具備:固定板101及光源102。 Form for implementing the invention Below, the sintering device of the embodiment of the present invention is described with reference to FIG. 1. The sintering device comprises: a fixing plate 101 and a light source 102.

固定板101係由每單位體積的熱容量為3000[kJ/m 3・K]以上且熱導率為45[W/m・K]以上的金屬構成。每單位體積的熱容量[kJ/m 3・K]可由物體固有物性值之比熱[kJ/kg・K]×密度[kg/m 3]求得。固定板101例如可將板厚定為0.3mm以上。固定板101例如可由銅構成。又,固定板101可由銅組成定為84~96%的紅黃銅(red brass)構成。又,固定板101可由銅組成定為59~71.5%的黃銅(brass)構成。又,固定板101可由鋁青銅(aluminum bronze)構成。又,固定板101可由鎢鋼(tungsten steel)構成。又,固定板101可由軋延鋼板構成。 The fixing plate 101 is made of a metal having a heat capacity per unit volume of 3000 [kJ/m 3・K] or more and a thermal conductivity of 45 [W/m・K] or more. The heat capacity per unit volume [kJ/m 3・K] can be obtained by the specific heat [kJ/kg・K] of the inherent physical property value of the object × density [kg/m 3 ]. The fixing plate 101 can have a plate thickness of, for example, 0.3 mm or more. The fixing plate 101 can be made of, for example, copper. Furthermore, the fixing plate 101 can be made of red brass having a copper composition of 84 to 96%. Furthermore, the fixing plate 101 can be made of brass having a copper composition of 59 to 71.5%. Furthermore, the fixing plate 101 can be made of aluminum bronze. Furthermore, the fixing plate 101 may be made of tungsten steel. Furthermore, the fixing plate 101 may be made of a rolled steel plate.

光源102係對樹脂基板111的糊圖案112照射近紅外線,該樹脂基板111係已固定於固定板101上,且形成有由導電性糊做成的糊圖案112。近紅外線的峰值波長區域定為0.8~1.7μm。此外,光源102係由未圖示的支持部支持於固定板101之上。光源102可配置在距離樹脂基板111表面大約100mm處。光源102可由例如多個近紅外線燈構成。光源102可利用例如阿多佛斯(Adphos)公司製之NIR系列。The light source 102 irradiates the paste pattern 112 of the resin substrate 111 with near infrared rays. The resin substrate 111 is fixed on the fixing plate 101 and has the paste pattern 112 made of conductive paste. The peak wavelength region of the near infrared rays is set to 0.8~1.7μm. In addition, the light source 102 is supported on the fixing plate 101 by a support portion not shown. The light source 102 can be arranged at a distance of about 100mm from the surface of the resin substrate 111. The light source 102 can be composed of, for example, a plurality of near infrared lamps. The light source 102 can utilize, for example, the NIR series manufactured by Adphos.

此外,該燒成裝置可具備固定機構113,該固定機構113用以將樹脂基板111固定於固定板101。固定機構113例如可由黏著層構成,且該黏著層係由具有黏著性的物質所構成。固定機構113例如可由下述物體構成:藉由塗布凝膠狀黏著物質所形成的黏著層、或具有黏著性的彈性體片材等。In addition, the sintering device may include a fixing mechanism 113 for fixing the resin substrate 111 to the fixing plate 101. The fixing mechanism 113 may be composed of, for example, an adhesive layer, and the adhesive layer is composed of an adhesive substance. The fixing mechanism 113 may be composed of, for example, an adhesive layer formed by applying a gel-like adhesive substance, or an elastic sheet having adhesive properties.

其次,參照圖2針對本發明實施形態之圖案形成方法進行說明。以下針對使用上述燒成裝置的圖案形成方法進行例示。Next, the pattern forming method of the embodiment of the present invention will be described with reference to Fig. 2. The following is an example of the pattern forming method using the above-mentioned firing device.

首先,在第1步驟S101中,將樹脂基板111固定於由每單位體積的熱容量為3000[kJ/m 3・K]以上且熱導率為45[W/m・K]以上的金屬構成的固定板101上,該樹脂基板111形成有由導電性糊做成的糊圖案112。此外,樹脂基板111可藉由固定機構113而固定於固定板101。可令固定機構113為用以將樹脂基板111固定於固定板101的黏著層。 First, in the first step S101, a resin substrate 111 is fixed on a fixing plate 101 made of a metal having a heat capacity per unit volume of 3000 [kJ/m 3・K] or more and a thermal conductivity of 45 [W/m・K] or more, and the resin substrate 111 is formed with a paste pattern 112 made of a conductive paste. In addition, the resin substrate 111 can be fixed to the fixing plate 101 by a fixing mechanism 113. The fixing mechanism 113 can be an adhesive layer for fixing the resin substrate 111 to the fixing plate 101.

樹脂基板111係由例如聚對苯二甲酸乙二酯、聚碳酸酯、聚丙烯、聚萘二甲酸乙二酯、聚醯亞胺(PI)等樹脂所構成。樹脂基板111係做成例如厚度30μm~10mm的片狀。The resin substrate 111 is made of resin such as polyethylene terephthalate, polycarbonate, polypropylene, polyethylene naphthalate, polyimide (PI), etc. The resin substrate 111 is formed in a sheet shape with a thickness of 30 μm to 10 mm, for example.

可令導電性糊為例如使金、銀、銅、鋁、鎳、鋅、錫等金屬微粒子或導電性碳微粒子分散於樹脂黏合劑而成者。導電性糊例如為藤倉化成股份有限公司製的奈米銀糊。糊圖案112例如可藉由熟知的絲網印刷法形成。此外,糊圖案112可藉由噴墨法(ink-jet method)而形成。糊圖案112可定為例如厚度2~10μm。此外,依使用的樹脂黏合劑,亦可將糊圖案112的厚度定為25μm。The conductive paste may be, for example, a paste in which metal particles such as gold, silver, copper, aluminum, nickel, zinc, and tin, or conductive carbon particles are dispersed in a resin binder. The conductive paste may be, for example, nanosilver paste manufactured by Fujikura Chemicals Co., Ltd. The paste pattern 112 may be formed, for example, by a well-known screen printing method. In addition, the paste pattern 112 may be formed by an ink-jet method. The paste pattern 112 may be, for example, set to a thickness of 2 to 10 μm. In addition, depending on the resin binder used, the thickness of the paste pattern 112 may also be set to 25 μm.

其次,在第2步驟S102中,對固定於固定板101的樹脂基板111上所形成的糊圖案112照射從光源102射出的近紅外線來將糊圖案112進行燒成,而於樹脂基板111上形成導電性圖案。導電性圖案例如為金屬圖案。所照射之近紅外線的峰值波長區域定為0.8~1.7μm。Next, in the second step S102, the paste pattern 112 formed on the resin substrate 111 fixed to the fixing plate 101 is irradiated with near-infrared rays emitted from the light source 102 to burn the paste pattern 112, thereby forming a conductive pattern on the resin substrate 111. The conductive pattern is, for example, a metal pattern. The peak wavelength region of the irradiated near-infrared rays is set to 0.8-1.7 μm.

經近紅外線(峰值波長區域0.8~1.7μm)照射的糊圖案112,其所含金屬微粒子會吸收照射到的近紅外線而發熱。另一方面,由於樹脂基板111不怎麼吸收照射到的近紅外線,因而不怎麼發熱。因此,可透過照射近紅外線而選擇性地加熱糊圖案112。因此,就能在抑制樹脂基板111變高溫的狀態下提高近紅外線的照射強度而選擇性地將糊圖案112加熱至高溫。The metal particles contained in the paste pattern 112 irradiated with near-infrared rays (peak wavelength region 0.8~1.7μm) absorb the irradiated near-infrared rays and generate heat. On the other hand, the resin substrate 111 does not absorb the irradiated near-infrared rays much and therefore does not generate much heat. Therefore, the paste pattern 112 can be selectively heated by irradiating with near-infrared rays. Therefore, the irradiation intensity of the near-infrared rays can be increased while suppressing the resin substrate 111 from becoming heated, and the paste pattern 112 can be selectively heated to a high temperature.

另一方面,由於糊圖案112受到加熱,因此形成有糊圖案112之處的樹脂基板111就會受到加熱,但該樹脂基板111的熱會傳導至固定板101而擴散掉。結果就是即便在形成有糊圖案112之處的樹脂基板111亦可抑制熱的上升。On the other hand, since the paste pattern 112 is heated, the resin substrate 111 where the paste pattern 112 is formed is heated, but the heat of the resin substrate 111 is conducted to the fixing plate 101 and diffused. As a result, the heat rise of the resin substrate 111 where the paste pattern 112 is formed can be suppressed.

依實施形態來說的話,該等之結果是能夠在防止樹脂基板111發生損壞的狀態下,更迅速且短時間地實施糊圖案112的燒成。例如:能夠以處理時間30秒~1分鐘來實施糊圖案112的燒成。According to the implementation form, the result is that the paste pattern 112 can be fired more quickly and in a shorter time without damaging the resin substrate 111. For example, the paste pattern 112 can be fired in a processing time of 30 seconds to 1 minute.

其次,關於實驗結果則顯示於以下表1。實驗中,在由表1所示各材料做成的各個樹脂基板(片材),形成由導電性糊(藤倉化成股份有限公司製的奈米銀糊)做成的規定圖案,並由各燈實施1分鐘的加熱(燈退火)。Next, the experimental results are shown in the following Table 1. In the experiment, a predetermined pattern made of a conductive paste (nanosilver paste manufactured by Fujikura Chemicals Co., Ltd.) was formed on each resin substrate (sheet) made of each material shown in Table 1, and then heated for 1 minute by each lamp (lamp annealing).

光源「近紅外線」係使用3隻峰值波長0.8~1.7μm的近紅外線燈,並把條件定為總輸出13kw、能量密度380kw/m 2。光源「Xe燈」係使用(峰值波長0.4~0.6μm的Xe燈。光源「遠紅外線」係使用1隻峰值波長3~4μm的遠紅外線燈,並定為總輸出1.25kw、能量密度40kw/m 2As the light source "near infrared", three near infrared lamps with a peak wavelength of 0.8~1.7μm were used, and the conditions were set to a total output of 13kw and an energy density of 380kw/ m2 . As the light source "Xe lamp", a Xe lamp with a peak wavelength of 0.4~0.6μm was used. As the light source "far infrared", one far infrared lamp with a peak wavelength of 3~4μm was used, and the conditions were set to a total output of 1.25kw and an energy density of 40kw/ m2 .

此外,圖案尺寸「30μm以下」:定為線寬30μm以下的配線圖案,圖案尺寸「1000μm」:定為線寬1000μm以下的配線圖案,圖案尺寸「10mm」:定為1邊10mm的正方形圖案。此外,各圖案的厚度定為2~10μm。In addition, the pattern size "30μm or less" is defined as a wiring pattern with a line width of 30μm or less, the pattern size "1000μm" is defined as a wiring pattern with a line width of 1000μm or less, and the pattern size "10mm" is defined as a square pattern with a side of 10mm. In addition, the thickness of each pattern is set to 2~10μm.

在上述條件下,針對處理時間在1分鐘以內、確認各圖案有導通且未觀察到樹脂基板(片材)變形的試料,將判定結果定為「○」。此外,未滿足上述條件的情況,將判定結果定為「×」。導通係以藉由熱風乾燥爐燒成90%以上的電阻值定為基準。Under the above conditions, for samples where the treatment time is within 1 minute, the conduction of each pattern is confirmed, and no deformation of the resin substrate (sheet) is observed, the judgment result is determined as "○". In addition, if the above conditions are not met, the judgment result is determined as "×". The conduction is determined based on the resistance value of 90% or more after baking in a hot air drying furnace.

[表1] [Table 1]

如表1所示般,由每單位體積的熱容量為3000[kJ/m 3・K]以上且熱導率為45[W/m・K]以上的金屬構成的基板,其判定結果為「○」。 As shown in Table 1, the evaluation result of a substrate made of a metal having a heat capacity per unit volume of 3000 [kJ/m 3 ·K] or more and a thermal conductivity of 45 [W/m·K] or more is "○".

如以上說明般,依據本發明,係在由每單位體積的熱容量為3000[kJ/m 3・K]以上且熱導率為45[W/m・K]以上的金屬構成的固定板上照射近紅外線來實施燒成,因此即便使用低耐熱性樹脂做成的基板,亦能以更短時間來實施導電性糊的燒成。 As described above, according to the present invention, the firing is performed by irradiating a fixing plate made of a metal having a heat capacity per unit volume of 3000 [kJ/m 3 ·K] or more and a thermal conductivity of 45 [W/m·K] or more, so that even if a substrate made of a low heat-resistant resin is used, the conductive paste can be fired in a shorter time.

例如在印刷基板等形成配線圖案(導電性圖案),係藉由絲網印刷來實施,形成1層配線圖案需要的時間為1分鐘左右。相對於此,為了燒成配線圖案而做成配線,現在一般進行的燒成乾燥步驟要花費數十分鐘到一小時以上的時間,縮短在該燒成乾燥步驟花費的時間已成為一個課題。For example, the formation of wiring patterns (conductive patterns) on printed circuit boards is carried out by screen printing, and it takes about 1 minute to form one layer of wiring patterns. In contrast, in order to bake the wiring patterns and make wiring, the baking and drying step generally takes tens of minutes to more than an hour, and shortening the time spent in this baking and drying step has become a problem.

此外,現已使用PET、PEN、PI等合成樹脂來作為新的可撓性基板的素材,但PI以外的合成樹脂耐熱性低,有因燒成及乾燥時的高溫而發生製造上的不良(印刷部分的破裂、剝離、基板的穿孔、變形等)的情況。相對於此,依據本發明的話,就可抑制樹脂基板製造時的熱變形,並可有效率地以短時間進行基板的製造。In addition, synthetic resins such as PET, PEN, and PI are currently used as materials for new flexible substrates, but synthetic resins other than PI have low heat resistance and may cause manufacturing defects (cracks and peeling of printed parts, perforations and deformation of substrates, etc.) due to high temperatures during sintering and drying. In contrast, according to the present invention, thermal deformation during the manufacture of resin substrates can be suppressed, and substrates can be manufactured efficiently in a short time.

再者,本發明並非受限於以上說明的實施形態,應知凡是該領域具有通常知識者可在本發明技術思想內實施許多變形及組合。Furthermore, the present invention is not limited to the above-described implementation forms, and it should be understood that anyone with ordinary knowledge in this field can implement many variations and combinations within the technical concept of the present invention.

101:固定板 102:光源 111:樹脂基板 112:糊圖案 113:固定機構 S101,S102:步驟 101: Fixing plate 102: Light source 111: Resin substrate 112: Paste pattern 113: Fixing mechanism S101, S102: Steps

圖1係構造圖,其顯示本發明實施形態之燒成裝置的構造。 圖2係流程圖,其說明本發明實施形態之圖案形成方法。 FIG1 is a structural diagram showing the structure of a sintering device according to an embodiment of the present invention. FIG2 is a flow chart illustrating a pattern forming method according to an embodiment of the present invention.

(無)(without)

Claims (8)

一種圖案形成方法,係將形成有由導電性糊做成的糊圖案的樹脂基板固定於固定板上,該固定板係由每單位體積的熱容量為3000[kJ/m 3・K]以上且熱導率為45[W/m・K]以上的金屬構成,並且 對固定於前述固定板的前述樹脂基板上所形成的前述糊圖案照射近紅外線來將前述糊圖案進行燒成,而於前述樹脂基板上形成導電性圖案。 A pattern forming method is provided, wherein a resin substrate having a paste pattern made of a conductive paste is fixed to a fixing plate, wherein the fixing plate is made of a metal having a heat capacity per unit volume of 3000 [kJ/m 3・K] or more and a thermal conductivity of 45 [W/m・K] or more, and the paste pattern formed on the resin substrate fixed to the fixing plate is irradiated with near-infrared rays to burn the paste pattern, thereby forming a conductive pattern on the resin substrate. 如請求項1之圖案形成方法,其中,前述近紅外線的峰值波長區域定為0.8~1.7μm。The pattern forming method of claim 1, wherein the peak wavelength region of the near-infrared ray is set to 0.8-1.7 μm. 如請求項1或2之圖案形成方法,其中,前述樹脂基板係透過固定機構而固定於前述固定板。A pattern forming method as claimed in claim 1 or 2, wherein the resin substrate is fixed to the fixing plate via a fixing mechanism. 如請求項3之圖案形成方法,其中,前述固定機構係用以將前述樹脂基板固定於前述固定板的黏著層。As in claim 3, the pattern forming method, wherein the fixing mechanism is used to fix the resin substrate to the adhesive layer of the fixing plate. 一種燒成裝置,具備: 固定板,其係由每單位體積的熱容量為3000[kJ/m 3・K]以上且熱導率為45[W/m・K]以上的金屬構成;及 光源,其係用以對固定於前述固定板上且形成有由導電性糊做成的糊圖案的樹脂基板的前述糊圖案照射近紅外線。 A sintering device comprises: a fixing plate made of a metal having a heat capacity per unit volume of 3000 [kJ/m 3 ·K] or more and a thermal conductivity of 45 [W/m·K] or more; and a light source for irradiating a resin substrate fixed to the fixing plate and having a paste pattern formed thereon with near-infrared rays. 如請求項5之燒成裝置,其中,前述近紅外線的峰值波長區域定為0.8~1.7μm。As in claim 5, the sintering device, wherein the peak wavelength region of the aforementioned near-infrared rays is set to 0.8~1.7μm. 如請求項5或6之燒成裝置,其具備用以將前述樹脂基板固定於前述固定板的固定機構。The firing device of claim 5 or 6 is provided with a fixing mechanism for fixing the resin substrate to the fixing plate. 如請求項7之燒成裝置,其中前述固定機構係由黏著層構成。As in claim 7, the sintering device, wherein the aforementioned fixing mechanism is composed of an adhesive layer.
TW111132943A 2022-08-31 Pattern forming method and firing device TW202412569A (en)

Publications (1)

Publication Number Publication Date
TW202412569A true TW202412569A (en) 2024-03-16

Family

ID=

Similar Documents

Publication Publication Date Title
TWI569700B (en) Conductive pattern formation method
US10561025B2 (en) Method of manufacturing polymer printed circuit board
TWI661752B (en) Method and system for manufaturing pulsed-mode direct-write laser metallization
CN211241762U (en) Heating element with surface anti-adhesion function and low-temperature smoking set with heating element
TW201505037A (en) Production method of conductive pattern
CN108243575A (en) The manufacturing method of polymeric printing circuit board
DE60021850T2 (en) CERAMIC HEATING ELEMENT
TW202412569A (en) Pattern forming method and firing device
JP7357099B2 (en) Pattern forming method and baking device
WO2024047728A1 (en) Pattern forming method and baking device
JP2015179849A5 (en) FPC with electromagnetic shielding material for FPC
JP2010105217A (en) Method for manufacturing printing intaglio plate, printing intaglio plate and conductor pattern
JP6351938B2 (en) Manufacturing method of bonded structure, bonded structure and apparatus
JP2009016570A (en) Method of manufacturing electromagnetic wave shield member having transparency
JP2013012510A (en) Method of forming conductive pattern
JP2008126475A (en) Genuineness determining medium with conductivity information and its manufacturing method
JP6269285B2 (en) Pattern formation method
CN105393650B (en) The manufacture method and conducting wiring of conducting wiring
KR20130014929A (en) Electrical sintering method for metal nanoparticle pattern using heat treating
JP6997524B2 (en) How to manufacture wiring pattern sheet
JPH03153308A (en) Manufacture of ceramic complex
JP2015111606A (en) Solar cell manufacturing method
JP2015195329A (en) Manufacturing method of conductive wiring, and conductive wiring
KR101743986B1 (en) Printing method using area height conquest film and manufacturing method of double layered prrinted circuit board
JP2017212311A (en) Wiring board manufacturing method