TW202410744A - Plasma-assisted condensation device and plasma-assisted condensation method - Google Patents

Abstract

A plasma-assisted condensation device and a plasma-assisted condensation method are described. The plasma-assisted condensation device includes a reaction chamber and an atmospheric pressure plasma device. The reaction chamber is configured for at least one object to be treated to react in the reaction chamber. A surface of the object includes several reactive functional groups. The surface of the object is coated with a film material layer, and the film material layer includes several functional groups. The atmospheric pressure plasma device is configured to generate plasma in the reaction chamber to perform an atmospheric pressure plasma treatment, so as to transfer energy of the plasma to the film material layers and the surface of the object to promote a condensation reaction between the functional groups of the film material layers and the reactive functional groups on the surface of the object.

Description

Plasma-assisted condensation device and plasma-assisted condensation method

The present disclosure relates to a plasma processing technology, and more particularly to a plasma-assisted condensation device and a plasma-assisted condensation method.

A common antifouling coating production technology is based on wet atmospheric pressure spraying of perfluorosilicone. This technology first sprays perfluorochemicals with silane functional groups onto the surface of the substrate. Subsequently, it is baked in an oven to cause a dehydration reaction between the silane functional group and the hydroxyl group (-OH) on the surface of the substrate to form a covalent bond. This anti-fouling coating spraying technology is widely adopted due to its high productivity.

The oven baking time after spraying must reach 30 minutes. Generally, tunnel ovens and multi-layer ovens are selected. Tunnel ovens require tens of meters of floor space, and in order to maintain temperature uniformity over a wide range, the energy consumption of the equipment is also considerable. The multi-layer furnace oven needs to be operated with a robotic arm, and it needs to be equipped with a multi-layer furnace oven, a multi-layer cooling furnace, and a dust-free fenced-in space for the robotic arm operation. The equipment cost is high.

Since it takes enough time for the product to reach the reaction temperature when using an oven for heating, it is not only time-consuming but also energy-consuming. In addition, the equipment cost of the oven is high to meet the process requirements. Moreover, when using an oven for heating, the substrate needs to be heated to the reaction temperature, and the choice of the substrate fixture is limited by its temperature resistance and durability. In addition, since the substrate will also be heated to the reaction temperature in the oven, the choice of the substrate material is also limited by its temperature resistance.

Therefore, one purpose of the present disclosure is to provide a plasma-assisted condensation device and a plasma-assisted condensation method, which utilize active substances in the plasma to directly contact the thin film material layer to transfer energy to the thin film material layer, and further Conduct energy to the surface of the object to be treated. In this way, energy can be concentrated on the surface of the object, and the condensation reaction time between the functional groups of the thin film material layer and the surface of the object can be greatly reduced, thereby improving the coating efficiency.

Another object of the present disclosure is to provide a plasma-assisted condensation device and a plasma-assisted condensation method that use plasma to provide energy, which can effectively shorten the time of the condensation reaction, thereby significantly reducing the equipment footprint and having Helps reduce equipment costs.

Another object of the present disclosure is to provide a plasma-assisted condensation device and a plasma-assisted condensation method, wherein the object and the carrier are kept at room temperature during the condensation process, so that the subsequent process can be continued without cooling. Therefore, the application of the present disclosure can not only save the cost of the cooling device, but also improve the coating efficiency, and the selection of the object and the carrier is more diverse.

According to the above-mentioned purpose of the present disclosure, a plasma-assisted condensation device is proposed. The plasma-assisted condensation device includes a reaction chamber and a normal-pressure plasma device. The reaction chamber is configured for at least one object to be processed to react in the reaction chamber. The surface of the object includes a plurality of active functional groups, and a thin film material layer is coated on the surface of the object, and the thin film material layer includes a plurality of functional groups. The normal-pressure plasma device is configured to generate plasma in the reaction chamber to perform normal-pressure plasma treatment, so as to transfer the energy of the plasma to the thin film material layer and the surface of the object, and promote the condensation reaction between the functional groups of the thin film material layer and the active functional groups on the surface of the object.

According to one embodiment of the present disclosure, the above-mentioned objects are a plurality of substrates, and the plasma-assisted compaction device further comprises a carrier configured to carry the substrates.

According to an embodiment of the present disclosure, the atmospheric pressure plasma device is a jet plasma (JET) device, a rotary jet plasma device, a dielectric layer discharge (DBD) plasma device, or a corona plasma device.

According to an embodiment of the present disclosure, the plasma-assisted condensation device further comprises a moving mechanism. The atmospheric pressure plasma device is disposed in the moving mechanism, and the moving mechanism is configured to drive the atmospheric pressure plasma device to move along one axis, two axes, or three axes. The moving speed of the moving mechanism is about 300 mm/s to about 1000 mm/s.

According to one embodiment of the present disclosure, the plasma-assisted compacting device further comprises a transfer mechanism, wherein the transfer mechanism is configured to carry and move a carrier.

According to an embodiment of the present disclosure, the above-mentioned objects are several powders, and these powders are several nanopowders and/or several micron powders.

According to one embodiment of the present disclosure, the particle size of the powder is equal to or less than about 50 μm.

According to an embodiment of the present disclosure, the above-mentioned normal pressure plasma device is a jet plasma device or a dielectric layer discharge plasma device.

According to an embodiment of the present disclosure, the dielectric layer discharge plasma device comprises a first electrode, a second electrode, and a dielectric cavity. The second electrode and the first electrode are opposite to each other. The dielectric cavity is between the first electrode and the second electrode, wherein the dielectric cavity defines a reaction chamber.

According to an embodiment of the present disclosure, the material of the dielectric cavity is ceramic or quartz.

According to the above object of the present disclosure, a plasma-assisted condensation method is further proposed. In this method, at least one object is provided, wherein the surface of the object contains several reactive functional groups. A thin film material layer is coated on the surface of the object, where the thin film material layer contains several functional groups. Perform normal pressure plasma treatment to generate plasma and transfer the energy of the plasma to the film material layer and the surface of the object, thereby promoting the condensation reaction of the functional groups of the film material layer and the active functional groups on the surface of the object.

According to one embodiment of the present disclosure, providing the object further includes performing a normal pressure plasma activation treatment on the object to form active functional groups on the surface of the object.

According to an embodiment of the present disclosure, the above-mentioned coating of the thin film material layer on the surface of the object includes using a two-fluid spraying method, a single-fluid spraying method, an ultrasonic spraying method, a rotary cup spraying method, or a rotary coating method.

According to an embodiment of the present disclosure, the thickness of the thin film material layer is equal to or less than 1 μm.

According to one embodiment of the present disclosure, the functional group includes silane, siloxane, hydroxyl group, or carboxyl group.

According to an embodiment of the present disclosure, the material of the above-mentioned thin film material layer is perfluorosiloxane.

According to one embodiment of the present disclosure, the condensation reaction is a curing reaction, a dehydration reaction, or a dealcoholization reaction.

According to an embodiment of the present disclosure, the above-mentioned objects are several base materials, and the materials of these base materials are glass, stainless steel, aluminum alloy, or plastic.

According to an embodiment of the present disclosure, the above-mentioned atmospheric pressure plasma treatment includes using an atmospheric pressure plasma device, and the atmospheric pressure plasma device is a jet plasma device, a rotary jet plasma device, a dielectric layer discharge plasma device, or a corona plasma device.

According to an embodiment of the present disclosure, the working height of the jet plasma device is about 2 mm to about 30 mm, the plasma power of the jet plasma device is about 200 W to about 1000 W, and the working gas for the atmospheric pressure plasma treatment is clean dry air (CDA), nitrogen (N ₂ , argon (Ar), oxygen (O ₂ ), or a mixture thereof.

According to one embodiment of the present disclosure, the working height of the dielectric layer discharge plasma device is about 2 mm to about 20 mm, the processing speed of the dielectric layer discharge plasma device is about 0.5 m/min to about 5 m/min, and the working gas for atmospheric pressure plasma processing is clean dry air, nitrogen, argon, oxygen, or a mixture thereof.

According to an embodiment of the present disclosure, the aforementioned objects are a plurality of powders, and these powders are a plurality of nanopowders and/or a plurality of micron powders.

According to an embodiment of the present disclosure, the particle size of the above-mentioned powder is equal to or less than about 50 μm.

According to an embodiment of the present disclosure, the above-mentioned atmospheric pressure plasma treatment includes using a jet plasma device or a dielectric layer discharge plasma device.

According to an embodiment of the present disclosure, the dielectric layer discharge plasma device comprises a first electrode, a second electrode, and a dielectric chamber. The second electrode and the first electrode are opposite to each other. The dielectric chamber is between the first electrode and the second electrode, wherein the atmospheric pressure plasma treatment is performed in the dielectric chamber.

Please refer to FIG. 1, which is a schematic diagram of a plasma-assisted condensation device according to an embodiment of the present disclosure. The plasma-assisted condensation device 100 can generate plasma and use the plasma to provide energy to promote the condensation reaction. In some embodiments, the plasma-assisted condensation device 100 mainly includes a reaction chamber 110 and an atmospheric pressure plasma device 130. The reaction chamber 110 can be used for atmospheric pressure plasma treatment.

In some exemplary examples, the plasma-assisted condensation device 100 further includes a carrier plate 120 . The carrier tray 120 may carry at least one object to be processed in the reaction chamber 110 . For example, at least one object carried by the carrier 120 can be several substrates 140, so that these substrates 140 can be treated with normal pressure plasma in the reaction chamber 110 at the same time. For example, the material of the base material 140 may be glass, stainless steel, aluminum alloy, or plastic. The base material 140 may also be a base material obtained by surface modification treatment or surface hardening treatment of the above-mentioned materials. The surface 140a of each substrate 140 includes a plurality of active functional groups. In some embodiments, before loading the substrates 140 into the reaction chamber 110 through the carrier tray 120, another normal pressure plasma device (not shown) can be used to perform normal pressure plasma activation on the surfaces 140a of the substrates 140. Treatment, thereby forming many active functional groups on the surface 140a of the substrate 140. In addition to forming active functional groups on the surface 140a of the substrate 140, this normal pressure plasma activation treatment also has the function of cleaning the surface 140a of the substrate 140.

After the plasma activation treatment and before loading the substrate 140 into the reaction chamber 110, a coating device (not shown) may be used to coat the thin film material layer 150 on the surface 140a of each substrate 140. For example, the coating device may be a two-fluid spray device, a single fluid spray device, an ultrasonic spray device, a rotary cup spray device, or a spin coating device. Each thin film material layer 150 contains several functional groups. In some embodiments, the functional groups include silanes, siloxanes, hydroxyl groups, or carboxyl groups. For example, the material of the thin film material layer 150 may be perfluorosiloxane.

As shown in FIG. 1 , the atmospheric pressure plasma device 130 is disposed in the reaction chamber 110 and can be located, for example, at the upper portion of the reaction chamber 110. After the tray 120 carrying the substrates 140 is loaded into the reaction chamber 110, the atmospheric pressure plasma device 130 is located above the substrates 140. The atmospheric pressure plasma device 130 can generate plasma to perform atmospheric pressure plasma treatment using the generated plasma. The atmospheric pressure plasma device 130 includes a plasma nozzle 132. The plasma generated by the atmospheric pressure plasma device 130 can be sprayed toward the substrate 140 through the plasma nozzle 132. There are many active substances in the plasma, and these active substances directly contact the thin film material layer 150 and can transfer energy to the thin film material layer 150. The thin film material layer 150 can further transfer energy to the surface 140a of the substrate 140, and concentrate the energy on the surface 140a of the substrate 140. Thereby, the functional groups of the thin film material layer 150 and the active functional groups on the surface 140a of the substrate 140 can use this energy to quickly undergo a condensation reaction to form a bond. In other words, the plasma generated by the atmospheric pressure plasma device 130 can promote the condensation reaction between the functional groups of the thin film material layer 150 and the active functional groups on the surface 140a of the substrate 140, and can effectively shorten the reaction time.

In some embodiments, the atmospheric pressure plasma device 130 is a jet plasma device, a rotary jet plasma device, a dielectric layer discharge plasma device, or a corona plasma device. In the example where the normal pressure plasma device 130 is a rotary jet plasma device, the nozzle 132 may, for example, have a rotating mechanism, and may rotate at an angle relative to the central axis of the normal pressure plasma device 130 to increase the amount of plasma. treatment area.

In some embodiments, the plasma-assisted condensation device 100 further includes a moving mechanism 160. As shown in FIG. 1 , the moving mechanism 160 is movably disposed at the upper portion of the reaction chamber 110. The moving mechanism 160 can move along at least one axis, such as axis X, axis Y, or axis Z. In FIG. 1 , axis Y is perpendicular to the paper plane. Alternatively, the moving mechanism 160 can move along two axes, such as any two of axis X, axis Y, and axis Z. Alternatively, the moving mechanism 160 can move along three axes, such as axis X, axis Y, and axis Z. Axis X, axis Y, and axis Z can be, for example, perpendicular to each other. The atmospheric pressure plasma device 130 is installed in the moving mechanism 160. Thus, the movement of the moving mechanism 160 can drive the atmospheric pressure plasma device 130 to move along one axis, two axes, or three axes to control the processing trajectory of the atmospheric pressure plasma device 130. In some exemplary examples, the moving speed of the moving mechanism 160 is about 300 mm/s to about 1000 mm/s.

Please continue to refer to FIG. 1 , the plasma-assisted condensation device 100 may optionally include a transfer mechanism 170. The carrier 120 may be placed on the transfer mechanism 170, and the transfer mechanism 170 may carry the carrier 120 and the substrate 140 and the film material layer 150 thereon, and move the carrier 120 and the substrate 140 and the film material layer 150 thereon. Specifically, the transfer mechanism 170 may load the carrier 120 and the substrate 140 and the film material layer 150 thereon from the coating device of the upstream process into the plasma-assisted condensation device 100, and after the condensation reaction, carry the carrier 120 and the substrate 140 and the film material layer 150 thereon to the downstream unloading station. 1, the transfer mechanism 170 may include a plurality of rollers 172. In other embodiments, the transfer mechanism may be a conveyor belt, or a combination of a conveyor belt and a plurality of rollers.

Please refer to FIG. 2 , which is a flow chart of a plasma-assisted condensation method according to an embodiment of the present disclosure. In some embodiments, the plasma-assisted condensation device 100 of FIG. 1 can be used to perform the plasma-assisted condensation method. Please refer to FIG. 1 as well. First, step 200 can be performed to provide at least one object. For example, several substrates 140 may be provided and placed on the carrier 120 . As described above regarding the plasma-assisted condensation device 100, the surface 140a of each substrate 140 includes several active functional groups. In some embodiments, when providing the substrate 140, another normal pressure plasma device can be used to perform normal pressure plasma activation treatment on the substrate 140 to clean the surface 140a of each substrate 140, and perform a normal pressure plasma activation treatment on each substrate 140. Active functional groups are formed on the surface 140a of the substrate 140.

Next, step 210 may be performed to coat the surface of the provided object, i.e., the surface 140a of each substrate 140, with a thin film material layer 150. For example, the thin film material layer 150 may be coated on the surface 140a of each substrate 140 using a two-fluid spraying method, a single-fluid spraying method, an ultrasonic spraying method, a rotary cup spraying method, or a rotary coating method. In some exemplary embodiments, the thickness TH of each thin film material layer 150 is equal to or less than about 1 μm, so as to facilitate rapid conduction of heat on the surface of the thin film material layer 150 to the surface 140a of the substrate 140. The functional groups and materials that may be included in the thin film material layer 150 have been described above and will not be described again here.

Next, step 220 may be performed to perform atmospheric pressure plasma treatment using the atmospheric pressure plasma device 130 . Please also refer to FIG. 3 , which is a schematic diagram of a plasma-assisted condensation process according to an embodiment of the present disclosure. The atmospheric pressure plasma device 130 can generate plasma 180 . When the plasma 180 contacts the surface 150a of the thin film material layer 150, the active material in the plasma 180 will transfer energy to the thin film material layer 150. The thin film material layer 150 can further conduct energy to the surface 140a of the substrate 140. The energy provided by the plasma 180 can promote the condensation reaction between the functional groups of the thin film material layer 150 and the active functional groups on the surface 140a of the substrate 140, and accelerate the condensation reaction. In addition, the plasma 180 generated by the gas phase collision only acts on the surface 140a of the substrate 140, so the energy efficiency can be greatly improved. In some embodiments, the condensation reaction may be a curing reaction, a dehydration reaction, or a dealcoholization reaction.

In some embodiments, the atmospheric pressure plasma device 130 is a jet plasma device. When performing atmospheric pressure plasma treatment, the operating height of the jet plasma device can be controlled at about 2mm to about 30mm. The plasma power of the jet plasma device can be controlled from about 200W to about 1000W. The working gas used in atmospheric pressure plasma treatment can be clean dry air, nitrogen, argon, oxygen, or a mixture thereof.

In some embodiments, the atmospheric pressure plasma device 130 is a dielectric layer discharge plasma device. When performing atmospheric pressure plasma treatment, the operating height of the dielectric layer discharge plasma device can be controlled at about 2 mm to about 20 mm. The processing speed of the dielectric layer discharge plasma device can be controlled at about 0.5m/min to about 5m/min. The working gas used for atmospheric pressure plasma treatment can be clean dry air, nitrogen, argon, oxygen, or a mixture thereof.

The plasma-assisted condensation method disclosed herein can also be applied to the processing of nano-scale powders or micron-scale powders. Please refer to FIG. 4 , which is a schematic diagram of another plasma-assisted condensation processing device according to an embodiment of the present disclosure. This embodiment utilizes a plasma-assisted condensation device 100a to perform plasma-assisted condensation processing on a plurality of powders 300. Therefore, the object provided to the plasma-assisted condensation device 100a is the powder 300. In some embodiments, the reaction chamber 110a of the plasma-assisted condensation device 100a can be connected to a powder raw material tank 310 and a powder collector 320. For example, the powder material tank 310 and the powder collector 320 are respectively connected to the opposite sides of the reaction chamber 110a. The powder material tank 310 supplies the powder 300 to the reaction chamber 110a. After the powder 300 is processed by the normal pressure plasma in the reaction chamber 110a, it is collected by the powder collector 320 on the other side. The powder 300 can be nano powder or micro powder. In some exemplary embodiments, the particle size of the powder 300 is equal to or less than about 50 μm.

In some embodiments, before being introduced into the reaction chamber 110a, these powders 300 can be surface modified, such as the substrate 140 in FIG. 1, so that the surface of the powder 300 contains several active functional groups. For example, the surface of the powder 300 can be subjected to normal pressure plasma activation treatment to form many active functional groups on the surface of the powder 300 . In addition, after the plasma activation treatment and before introducing the powder 300 into the reaction chamber 110a, a coating device can be used to coat a thin film material layer on the surface of the powder 300. The thickness of the thin film material layer is equal to or less than about 1 μm to facilitate rapid conduction of heat on the surface of the thin film material layer to the surface of the powder 300 . The film material layer contains several functional groups. In some embodiments, the functional groups include silanes, siloxanes, hydroxyl groups, or carboxyl groups. For example, the material of the thin film material layer may be perfluorosiloxane.

In this embodiment, the normal pressure plasma device 330 is a jet plasma device. The normal pressure plasma device 330 can be, for example, installed in the upper part of the reaction chamber 110a. The normal pressure plasma device 330 can generate plasma 340 in the reaction chamber 110a, so as to use the generated plasma 340 to perform normal pressure plasma treatment on the powder 300. There are many active substances in the plasma, and these active substances directly contact the thin film material layer coated on the surface of the powder 300, and can transfer energy to the thin film material layer. The thin film material layer can further transfer energy to the surface of the powder 300, and concentrate the energy on the surface of the powder 300. Thus, the functional groups of the thin film material layer and the active functional groups on the surface of the powder 300 can use this energy to quickly undergo a condensation reaction to form a bond. Therefore, the plasma 340 generated by the atmospheric pressure plasma device 330 can promote the condensation reaction between the functional groups of the thin film material layer and the active functional groups on the surface of the powder 300, and can effectively shorten the condensation reaction time. In some embodiments, the condensation reaction can be a curing reaction, a dehydration reaction, or a de-alcoholization reaction.

Please refer to FIG. 5 , which is a schematic diagram of another plasma-assisted condensation treatment device according to an embodiment of the present disclosure. This embodiment is roughly the same as the embodiment described based on FIG. 4. Both embodiments perform plasma-assisted condensation treatment on the powder 300. The difference between the two is that the plasma-assisted condensation device 100b of this embodiment uses The dielectric layer discharge plasma device 350 provides plasma.

The dielectric layer discharge plasma device 350 mainly includes a first electrode 352, a second electrode 354, and a dielectric cavity 356. The first electrode 352 and the second electrode 354 are arranged opposite to each other. The dielectric cavity 356 is between the first electrode 352 and the second electrode 354 . Dielectric cavity 356 defines reaction chamber 110b. In some embodiments, dielectric cavity 356 is ceramic or quartz. The powder raw material tank 310 and the powder collector 320 are respectively coupled to two opposite sides of the dielectric cavity 356 and communicate with the reaction chamber 110b.

The normal pressure plasma device 350 can generate plasma in the reaction chamber 110b in the dielectric cavity 356, and use the generated plasma to perform normal pressure plasma treatment on the powder 300 in the dielectric cavity 356. The active material in the plasma directly contacts the thin film material layer coated on the surface of the powder 300 and can transfer energy to the thin film material layer. The thin film material layer can further conduct energy to the surface of the powder 300 and concentrate the energy on the surface of the powder 300, thereby promoting the condensation reaction between the functional groups of the thin film material layer and the active functional groups on the surface of the powder 300. , such as curing reaction, dehydration reaction, or dealcoholization reaction.

Table 1 below is a comparison of the jet plasma device and the dielectric layer discharge plasma device used in the embodiments of the present disclosure, and the traditional multi-layer oven and tunnel oven heating for condensation processing. Table 1 jet plasma dielectric layer discharge plasma multi-layer oven tunnel oven Estimated total power (kW) 4~50 8~50 200~400 300~600 Equipment area (m ² ) 1~5 1~5 6~20 20~100 Substrate temperature after treatment (℃) <80 <50 >120 >120 Note Requires cooling furnace Need to include heating section and cooling section

As shown in Table 1 above, the power required by the jet plasma device and the dielectric layer discharge plasma device used in the embodiments of the present disclosure is much less than that of the traditional multi-layer furnace oven and the tunnel oven. In addition, the equipment of the present disclosure also occupies less space than the traditional oven, especially the tunnel oven. The temperature of the substrate after the plasma-assisted condensation treatment of the present disclosure is also lower than the temperature of the substrate heated by the traditional oven. In addition, the traditional multi-layer furnace oven needs to be equipped with an additional cooling furnace, resulting in high equipment costs. The tunnel oven needs to include an additional heating section and a cooling section, resulting in a significant increase in the equipment area.

From the above-mentioned implementation method, it can be seen that one advantage of the present disclosure is that the implementation method of the present disclosure utilizes the active substance in the plasma to directly contact the thin film material layer, thereby transferring energy to the thin film material layer, and further transferring energy to the surface of the object to be processed. In this way, the energy can be concentrated on the surface of the object, and the condensation reaction time between the functional groups of the thin film material layer and the surface of the object can be greatly shortened, thereby improving the coating efficiency.

Another advantage of the present disclosure is that the implementation of the present disclosure uses plasma to provide energy, which can effectively shorten the time of the condensation reaction, thereby significantly reducing the equipment footprint and helping to reduce the equipment cost.

Another advantage of the present disclosure is that the object and the carrier are kept at room temperature during the condensation process, so the subsequent process can be continued without cooling. Therefore, the application of the present disclosure can not only save the cost of cooling equipment, but also improve the coating efficiency, and the selection of objects and carriers is more diverse.

Although the present disclosure has been disclosed through embodiments, they are not intended to limit the present disclosure. Anyone with ordinary knowledge in this technical field can make various changes and modifications without departing from the spirit and scope of the present disclosure. Therefore, the scope of protection of the present disclosure shall be subject to the scope of the appended patent application.

100: plasma-assisted condensation device 100a: plasma-assisted condensation device 100b: plasma-assisted condensation device 110: reaction chamber 110a: reaction chamber 110b: reaction chamber 120: carrier plate 130: atmospheric pressure plasma device 132: plasma nozzle 140: substrate 140a: surface 150: film material layer 160: moving mechanism 170: transfer mechanism 172: roller 180: plasma 200: step 210: step 220: step 300: powder 310: powder raw material tank 320: Powder collector 330: Normal pressure plasma device 340: Plasma 350: Dielectric layer discharge plasma device 352: First electrode 354: Second electrode 356: Dielectric cavity X: axis Y: axis Z: axis

In order to make the above and other purposes, features, advantages and embodiments of the present disclosure more clearly understandable, the attached drawings are described as follows: [Figure 1] is a schematic diagram of a plasma-assisted condensation device according to an embodiment of the present disclosure; [Figure 2] is a flow chart of a plasma-assisted condensation method according to an embodiment of the present disclosure; [Figure 3] is a schematic diagram of a plasma-assisted condensation process according to an embodiment of the present disclosure; [Figure 4] is a schematic diagram of another plasma-assisted condensation process according to an embodiment of the present disclosure; and [Figure 5] is a schematic diagram of another plasma-assisted condensation process according to an embodiment of the present disclosure.

Domestic storage information (please note in the order of storage institution, date, and number) None Foreign storage information (please note in the order of storage country, institution, date, and number) None

100: Plasma assisted condensation device

110:Reaction room

120: Load disk

130: Normal pressure plasma device

132:Plasma nozzle

140: Base material

140a: Surface

150:Thin film material layer

160:Mobile mechanism

170:Transfer mechanism

172: Roller

X: axis

Y: axis

Z: axis

Claims (25)

A plasma-assisted condensation device comprises: a reaction chamber configured for at least one object to be treated to react in the reaction chamber, wherein a surface of the at least one object comprises a plurality of active functional groups, a thin film material layer is coated on the surface of the at least one object, and the thin film material layer comprises a plurality of functional groups; and a normal pressure plasma device, wherein the normal pressure plasma device is configured to generate a plasma in the reaction chamber to perform a normal pressure plasma treatment, so as to transfer the energy of the plasma to the thin film material layer and the surface of the at least one object, so as to promote a condensation reaction between the functional groups of the thin film material layer and the active functional groups on the surface of the at least one object. A plasma-assisted compaction apparatus as described in claim 1, wherein the at least one object is a plurality of substrates, and the plasma-assisted compaction apparatus further comprises a carrier configured to carry the substrates. A plasma-assisted condensation device as described in claim 2, wherein the atmospheric pressure plasma device is a jet plasma (JET) device, a rotary jet plasma device, a dielectric layer discharge (DBD) plasma device, or a corona plasma device. The plasma-assisted condensation device as described in claim 2 further includes a moving mechanism, wherein the normal-pressure plasma device is disposed in the moving mechanism, and the moving mechanism is configured to drive the normal-pressure plasma device to move along one axis, two axes, or three axes, and a moving speed of the moving mechanism is 300 mm/s to 1000 mm/s. The plasma-assisted compacting device as described in claim 2 further includes a transfer mechanism, wherein the transfer mechanism is configured to carry and move the carrier. A plasma-assisted condensation device as described in claim 1, wherein the at least one object is a plurality of powders, and the powders are a plurality of nanopowders and/or a plurality of micron powders. A plasma-assisted condensation apparatus as described in claim 6, wherein the particle size of the powders is equal to or less than 50 μm. The plasma-assisted condensation device of claim 6, wherein the normal pressure plasma device is a jet plasma device or a dielectric layer discharge plasma device. The plasma-assisted condensation device of claim 8, wherein the dielectric layer discharge plasma device includes: a first electrode; a second electrode opposite to the first electrode; and A dielectric cavity is between the first electrode and the second electrode, wherein the dielectric cavity defines the reaction chamber. A plasma-assisted condensation device as described in claim 9, wherein the material of the dielectric cavity is ceramic or quartz. A plasma-assisted condensation method, including: Provide at least one object, wherein a surface of the at least one object includes a plurality of reactive functional groups; Coating the surface of the at least one object with a thin film material layer, wherein the thin film material layer includes a plurality of functional groups; and Performing a normal pressure plasma treatment to generate a plasma and transfer the energy of the plasma to the thin film material layer and the surface of the at least one object, thereby promoting the interaction between the functional groups of the thin film material layer and the at least one object. The condensation reaction of the active functional groups on the surface of the object proceeds. The plasma-assisted condensation method as described in claim 11, wherein providing the at least one object further comprises subjecting the at least one object to a normal pressure plasma activation treatment to form the active functional groups on the surface of the at least one object. The plasma-assisted condensation method as described in claim 11, wherein coating the surface of the at least one object with the thin film material layer comprises utilizing a two-fluid spraying method, a single-fluid spraying method, an ultrasonic spraying method, a rotary cup spraying method, or a rotary coating method. The plasma-assisted condensation method as claimed in claim 11, wherein a thickness of the thin film material layer is equal to or less than 1 μm. The plasma-assisted condensation method as described in claim 11, wherein the functional groups include silane, siloxane, hydroxyl, or carboxyl groups. The plasma-assisted condensation method as claimed in claim 11, wherein the material of the thin film material layer is perfluorosiloxane. The plasma-assisted condensation method as claimed in claim 11, wherein the condensation reaction is a curing reaction, a dehydration reaction, or a dealcoholization reaction. The plasma-assisted condensation method of claim 11, wherein the at least one object is a plurality of substrates, and the materials of the substrates are glass, stainless steel, aluminum alloy, or plastic. A plasma-assisted condensation method as described in claim 18, wherein the atmospheric pressure plasma treatment includes utilizing a atmospheric pressure plasma device, and the atmospheric pressure plasma device is a jet plasma device, a rotary jet plasma device, a dielectric layer discharge plasma device, or a corona plasma device. The plasma-assisted condensation method as described in claim 19, wherein the operating height of the jet plasma device is 2 mm to 30 mm, the plasma power of the jet plasma device is 200 W to 1000 W, and the normal pressure plasma is performed The working gases processed are clean dry air (CDA), nitrogen (N ₂ , argon (Ar), oxygen (O ₂ ), or a mixture thereof. A plasma-assisted condensation method as described in claim 19, wherein the operating height of the dielectric layer discharge plasma device is 2 mm to 20 mm, the processing speed of the dielectric layer discharge plasma device is 0.5 m/min to 5 m/min, and the working gas for the atmospheric pressure plasma treatment is clean dry air, nitrogen, argon, oxygen, or a mixture thereof. The plasma-assisted condensation method of claim 11, wherein the at least one object is a plurality of powders, and the powders are a plurality of nanopowders and/or a plurality of micron powders. The plasma-assisted condensation method as described in claim 22, wherein the particle size of the powders is equal to or less than 50 μm. A plasma-assisted condensation method as described in claim 22, wherein the atmospheric pressure plasma treatment includes utilizing a jet plasma device or a dielectric discharge plasma device. A plasma-assisted condensation method as described in claim 24, wherein the dielectric layer discharge plasma device comprises: a first electrode; a second electrode, opposite to the first electrode; and a dielectric cavity, between the first electrode and the second electrode, wherein the atmospheric pressure plasma treatment is performed in the dielectric cavity.

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