TW202410006A - Display device and method for fabricating the same - Google Patents

Abstract

A display device includes a circuit substrate, a first transparent layer, a plurality of light-emitting elements, a light-shielding layer and a second transparent layer. The first transparent layer is disposed on the circuit substrate and has a plurality of first openings. The plurality of light-emitting elements is disposed in the plurality of first openings respectively and electrically connected to the circuit substrate. The light-shielding layer is disposed on the first transparent layer and has a plurality of second openings, wherein the plurality of second openings is overlapped with the plurality of first openings respectively. The second transparent layer is disposed in the plurality of first openings and the plurality of second openings and on the light-shielding layer. A method for fabricating a display device is also provided.

Description

Display device and manufacturing method thereof

The present invention relates to a display device and a manufacturing method thereof.

Micro-LED display devices have the advantages of power saving, high efficiency, high brightness and fast response time. Due to the extremely small size of micro-LEDs, a protective layer is generally used to cover the micro-LEDs to protect them, thereby extending the service life of the Micro-LED display devices and ensuring their performance. However, experiments have shown that compared with Micro-LED display devices that do not use a protective layer to cover the micro-LEDs, Micro-LED display devices that use a protective layer to cover the micro-LEDs will have a loss of about 40% in terms of the relative intensity of forward light, making it difficult to improve the light output efficiency of the Micro-LED display devices.

The present invention provides a display device with improved relative intensity of forward light output.

The present invention also provides a method for manufacturing a display device, which can improve the relative intensity of forward light output of the display device.

An embodiment of the present invention provides a display device, comprising: a circuit substrate; a first light-transmitting layer, located on the circuit substrate and having a plurality of first openings; a plurality of light-emitting elements, respectively disposed in the plurality of first openings and electrically connected to the circuit substrate; a light-shielding layer, located on the first light-transmitting layer and having a plurality of second openings, wherein the plurality of second openings respectively overlap the plurality of first openings; and a second light-transmitting layer, disposed in the plurality of first openings and the plurality of second openings and on the light-shielding layer.

In one embodiment of the present invention, the refractive index of the second light-transmitting layer is greater than the refractive index of the first light-transmitting layer.

In an embodiment of the present invention, the first opening has a first side wall, and an angle θ1 is formed between the first side wall and the surface of the circuit substrate, and 0＜θ1＜90°.

In one embodiment of the present invention, the first opening has a second side wall, the first side wall is located between the second side wall and the circuit substrate, an extension direction of the second side wall forms an angle θ2 with the surface of the circuit substrate, and θ1＜θ2≤90°.

In an embodiment of the present invention, the above-mentioned display device further includes a third light-transmitting layer located on the second light-transmitting layer, and the refractive index of the third light-transmitting layer is greater than the refractive index of the second light-transmitting layer.

In an embodiment of the present invention, the display device further includes a cover plate, and the third light-transmitting layer is located between the cover plate and the circuit substrate.

In an embodiment of the present invention, the above-mentioned display device further includes a light-transmitting structure located between the third light-transmitting layer and the second light-transmitting layer, and the light-transmitting structure has a plurality of third openings, wherein the plurality of third openings The openings completely overlap the plurality of second openings respectively.

In an embodiment of the present invention, the side wall and the bottom surface of the light-transmitting structure have an angle θ3, and 90＜θ3≤160°.

In an embodiment of the present invention, the refractive index of the above-mentioned third light-transmitting layer is greater than the refractive index of the light-transmitting structure.

In an embodiment of the present invention, the ratio of the diameter of the second opening to the diameter of the third opening is between 10/7 and 5/2.

In an embodiment of the present invention, the ratio of the thickness of the third light-transmitting layer to the height of the light-transmitting structure is between 25/3 and 4.

Another embodiment of the present invention provides a method for manufacturing a display device, comprising: disposing a plurality of light-emitting elements on a circuit substrate; forming a first light-transmitting layer on the circuit substrate, wherein the first light-transmitting layer has a plurality of first openings, wherein the plurality of light-emitting elements completely overlap the plurality of first openings; forming a light-shielding layer on the first light-transmitting layer, wherein the light-shielding layer has a plurality of second openings, wherein the plurality of second openings completely overlap the plurality of first openings; openings; forming a second light-transmitting layer on the light-shielding layer, and the second light-transmitting layer is filled into the plurality of first openings and the plurality of second openings; forming a third light-transmitting layer on the cover plate; forming a light-transmitting structure on the third light-transmitting layer, and the light-transmitting structure has a plurality of third openings; and assembling the circuit substrate and the cover plate so that the light-transmitting structure and the plurality of light-emitting elements are located between the circuit substrate and the cover plate, and the plurality of second openings respectively overlap the corresponding third openings.

In an embodiment of the present invention, the manufacturing method of the display device further includes forming an adhesive layer on the second light-transmitting layer before assembling, and filling the adhesive layer into the plurality of third openings after assembling.

In an embodiment of the present invention, the material of the above-mentioned adhesive layer is the same as the material of the third light-transmitting layer.

In order to make the above-mentioned features and advantages of the present invention more obvious and easy to understand, embodiments are given below and described in detail with reference to the accompanying drawings.

In the drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity. Throughout this specification, the same reference numbers refer to the same elements. It will be understood that when an element such as a layer, film, region or substrate is referred to as being "on" or "connected to" another element, it can be directly on or connected to the other element, or Intermediate elements may also be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intervening elements present. As used herein, "connected" may refer to physical and/or electrical connection. Furthermore, "electrical connection" or "coupling" can mean the presence of other components between two components.

It should be understood that although the terms "first", "second", "third", etc. may be used herein to describe various elements, components, regions, layers and/or parts, these elements, components, regions, layers and/or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or part from another element, component, region, layer or part. Therefore, the first "element", "component", "region", "layer" or "part" discussed below can be referred to as a second element, component, region, layer or part without departing from the teachings of this article.

The terms used herein are for the purpose of describing specific embodiments only and are not restrictive. As used herein, unless the context clearly indicates otherwise, the singular forms "a", "an" and "the" are intended to include plural forms, including "at least one" or to mean "and/or". As used herein, the term "and/or" includes any and all combinations of one or more of the relevant listed items. It should also be understood that when used in this specification, the terms "include" and/or "include" specify the presence of the features, regions, wholes, steps, operations, elements and/or parts, but do not exclude the presence or addition of one or more other features, regions, wholes, steps, operations, elements, parts and/or combinations thereof.

In addition, relative terms such as "lower" or "bottom" and "upper" or "top" may be used herein to describe the relationship of one element to another element, as shown in the figures. It should be understood that relative terms are intended to include different orientations of the device in addition to the orientation shown in the figures. For example, if the device in one figure is flipped, the elements described as being on the "lower" side of the other elements will be oriented on the "upper" side of the other elements. Therefore, the exemplary term "lower" can include both "lower" and "upper" orientations, depending on the specific orientation of the figure. Similarly, if the device in one figure is flipped, the elements described as being "lower" or "below" other elements will be oriented as being "above" other elements. Therefore, the exemplary term "lower" or "below" can include both above and below orientations.

As used herein, "about," "approximately," or "substantially" includes the stated value and the average value within an acceptable deviation range of the particular value determined by a person of ordinary skill in the art, taking into account the measurement in question and the particular amount of error associated with the measurement (i.e., the limitations of the measurement system). For example, "about" can mean within one or more standard deviations of the stated value, or within ±30%, ±20%, ±10%, ±5%. Furthermore, as used herein, "about," "approximately," or "substantially" can select a more acceptable deviation range or standard deviation depending on the optical property, etching property, or other property, and can apply to all properties without a single standard deviation.

Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by ordinary technicians in the field to which the present invention belongs. It will be further understood that those terms as defined in commonly used dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the relevant technology and the present invention, and will not be interpreted as an idealized or overly formal meaning unless expressly defined as such in this document.

Exemplary embodiments are described herein with reference to cross-sectional views that are schematic illustrations of idealized embodiments. Therefore, variations in the shapes of the illustrations as a result of, for example, manufacturing techniques and/or tolerances are to be expected. Therefore, the embodiments described herein should not be construed as limited to the specific shapes of the regions as shown herein, but rather include shape deviations that result, for example, from manufacturing. For example, a region shown or described as flat may typically have rough and/or nonlinear features. Furthermore, sharp corners shown may be rounded. Therefore, the regions shown in the figures are schematic in nature, and their shapes are not intended to illustrate the exact shape of the regions and are not intended to limit the scope of the claims.

1A to 3B are partial cross-sectional schematic diagrams of the steps of a manufacturing method of the display device 10 according to an embodiment of the present invention. Hereinafter, the manufacturing method of the display device 10 will be described with reference to FIGS. 1A to 3B .

First, referring to FIG. 1A , a plurality of light-emitting elements 120 are disposed on the circuit substrate 110 . For example, the plurality of light-emitting elements 120 are manufactured on a growth substrate and then transferred to the circuit substrate 110 through mass transfer technology. In some embodiments, the mass transfer technology includes laser transfer technology, where the laser transfer technology realizes the separation of the light-emitting element 120 by using a laser to generate a light-matter reaction between the light-emitting element 120 and the growth substrate, and simultaneously generates The impact force or driving force can detach the light-emitting element 120 and push the light-emitting element 120 to move toward the circuit substrate 110 . In some embodiments, the plurality of light-emitting elements 120 may be arranged in an array on the circuit substrate 110, but the invention is not limited thereto.

For example, the circuit substrate 110 may include a base plate 112 and a driving circuit layer 114. The base plate 112 may be a transparent substrate or a non-transparent substrate, and its material may be a quartz substrate, a glass substrate, a polymer substrate or other appropriate materials, but the present invention is not limited thereto. The driving circuit layer 114 may include components or circuits required by the display device 10, such as driving components, switching components, storage capacitors, power lines, driving signal lines, timing signal lines, current compensation lines, detection signal lines, etc. In some embodiments, the driving circuit layer 114 may be formed on the base plate 112 by a thin film deposition process, a mask process, and an etching process, and the driving circuit layer 114 may include an active element array, wherein the active element array includes a plurality of active elements arranged in an array. The active element is, for example, a thin film transistor, but the present invention is not limited thereto.

Specifically, the light emitting element 120 may be formed on a growth substrate, such as a sapphire substrate. In some embodiments, the method of forming the light-emitting element 120 may include performing an epitaxial process using appropriate reactants to deposit a required film, and then patterning the film through a photolithography process and an etching process to form the light-emitting element. Various sub-layers of 120. In some embodiments, a doping process can also be selectively performed on some sub-layers of the light-emitting element 120 . In some embodiments, the light emitting element 120 may be a micro light emitting diode (Micro-LED). The light-emitting element 120 may include two electrodes (not shown), and the two electrodes may be electrically connected to two pads (not shown) provided on the driving circuit layer 114 of the circuit substrate 110 respectively. In this way, the display device 10 can control the light emission of the light-emitting element 120 through the circuit substrate 110 .

Next, referring to FIG. 1B to FIG. 1D , a first transparent layer 130 is formed on the circuit substrate 110 , and the first transparent layer 130 has a plurality of openings O1 , wherein the orthographic projections of the plurality of light emitting elements 120 on the circuit substrate 110 completely overlap the orthographic projections of the plurality of openings O1 on the circuit substrate 110 .

In detail, referring to FIG. 1B , the first light-transmitting layer 130 may be formed on the circuit substrate 110 and the light-emitting element 120. The first light-transmitting layer 130 may be formed by a spin coating process or other similar processes, but the present invention is not limited thereto. In some embodiments, the refractive index of the first light-transmitting layer 130 may be between 1.3 and 1.45, for example, the refractive index of the first light-transmitting layer 130 may be approximately 1.4.

Next, please refer to FIG. 1C , an opening PO1 can be formed in the first light-transmitting layer 130 , the opening PO1 does not expose the light-emitting element 120 , and the orthographic projection of the light-emitting element 120 on the circuit substrate 110 completely overlaps the opening PO1 on the orthographic projection of the circuit substrate 110 . projection. Next, please refer to FIG. 1D , an opening PO2 can be formed below the opening PO1 to expose the light-emitting element 120 and part of the circuit substrate 110 , and the side wall W2 of the opening PO2 is located between the side wall W1 of the opening PO1 and the circuit substrate 110 . Therefore, the opening O1 of the first light-transmitting layer 130 may include the opening PO1 and the opening PO2. In some embodiments, the opening PO1 and the opening PO2 can be formed through an etching process or an exposure and development process. In some embodiments, there may be an included angle θ1 between the side wall W2 of the opening PO2 and the surface F1 of the circuit substrate 110, and 0<θ1<90°. For example, the included angle θ1 is about 60°. In some embodiments, there may be an included angle θ2 between the extending direction of the side wall W1 of the opening PO1 and the surface F1 of the circuit substrate 110, and θ1<θ2≤90°. For example, the included angle θ2 is approximately 85° or 90°.

Next, referring to FIG. 1E , a light shielding layer 140 is formed on the surface F2 of the first light-transmitting layer 130 . The light shielding layer 140 may have a plurality of openings O2 , and the plurality of openings O2 overlap the plurality of openings O1 respectively, so as not to affect the light emission of the light-emitting element 120 . In some embodiments, the light shielding layer 140 may be formed by an ink jet printing process. The light shielding layer 140 may include a dark light-absorbing material, such as a black resin or a metal oxide, but the present invention is not limited thereto.

Next, referring to FIG. 1F , a second light-transmitting layer 150 is formed on the light-shielding layer 140, the first light-transmitting layer 130, the light-emitting element 120, and the circuit substrate 110, and the second light-transmitting layer 150 is filled into the plurality of openings O1 and the plurality of openings O2, so that the second light-transmitting layer 150 can cover the light-emitting element 120, thereby providing protection for the light-emitting element 120. In some embodiments, the second light-transmitting layer 150 can be formed by a spin coating process or other similar processes. The second light-transmitting layer 150 can include a transparent dielectric material, such as an acrylic resin or polyurethane, and the refractive index of the second light-transmitting layer 150 can be between 1.45 and 1.6, for example, the refractive index of the second light-transmitting layer 150 can be about 1.488.

Next, referring to FIG. 1G , an adhesive layer AH is formed on the second light-transmitting layer 150, and the adhesive layer AH can completely cover the second light-transmitting layer 150. In some embodiments, the adhesive layer AH can be formed by a spin coating process or other similar processes. The adhesive layer AH can include an adhesive material such as an acrylic resin.

Next, referring to FIG. 2A , a cover plate CV is provided, and a third light-transmitting layer 160 is formed on the cover plate CV. The third light-transmitting layer 160 may be formed on the cover plate CV by a spin coating process or other similar processes, but the present invention is not limited thereto. In some embodiments, the refractive index of the third light-transmitting layer 160 may be between 1.6 and 2, for example, the refractive index of the third light-transmitting layer 160 may be approximately 1.7.

Next, referring to FIGS. 2A to 2C , a light-transmitting structure TS is formed on the third light-transmitting layer 160 , and the light-transmitting structure TS has a plurality of openings O3 . Specifically, please refer to FIG. 2A . The fourth light-transmitting layer 170 may be formed on the third light-transmitting layer 160 by, for example, a spin coating process. Next, please refer to FIG. 2B. The mask MK and the light beam LB can be used to pattern the fourth light-transmitting layer 170, that is, the fourth light-transmitting layer 170 can be transformed into a light-transmitting layer having a plurality of openings O3 as shown in FIG. 2C. StructureTS. For example, the mask MK may have an opening OP1, and the portion of the fourth light-transmitting layer 170 corresponding to the opening OP1 may be hardened after being exposed to the light beam LB (eg, ultraviolet light). Then, the hardened portion of the fourth light-transmitting layer 170 can be removed through a development process, thereby forming the opening O3 in the fourth light-transmitting layer 170 . In some embodiments, the refractive index of the light-transmitting structure TS may be between 1.35 and 1.45. For example, the refractive index of the light-transmitting structure TS may be approximately 1.4.

Next, please refer to FIGS. 3A to 3B to pair the structure carried by the circuit substrate 110 shown in FIG. 1G with the structure carried by the cover CV shown in FIG. 2C , so that the light-emitting element 120 , the first light-transmitting layer 130 , and the light-shielding layer are The layer 140, the second light-transmitting layer 150, the third light-transmitting layer 160 and the light-transmitting structure TS are located between the circuit substrate 110 and the cover plate CV, and the plurality of openings O2 respectively overlap the corresponding openings O3. In some embodiments, after the assembly, the adhesive layer AH can be filled into the plurality of openings O3, so that there is a very small amount of adhesive layer AH between the light-transmitting structure TS and the second light-transmitting layer 150. Therefore, the light-transmitting structure The TS may be very close to the second light-transmitting layer 150 . In some embodiments, the light-transmitting structure TS may contact the second light-transmitting layer 150 such that the light-transmitting structure TS is located between the second light-transmitting layer 150 and the third light-transmitting layer 160 . In some embodiments, the material of the adhesive layer AH may be the same as the material of the third light-transmitting layer 160 , so that the adhesive layer AH becomes a part of the third light-transmitting layer 160 . In other words, the third light-transmitting layer 160 may include an adhesive layer AH.

FIG. 4 is a partial top view schematic diagram of a display device 10 according to an embodiment of the present invention. FIG. 3B may be a cross-sectional schematic diagram taken along the section line A-A' of FIG. 4A. Referring to FIG. 4 and FIG. 3B simultaneously, the display device 10 includes: a circuit substrate 110, a plurality of light-emitting elements 120, a first light-transmitting layer 130, a light-shielding layer 140, and a second light-transmitting layer 150. The first light-transmitting layer 130 is located on the circuit substrate 110, and the first light-transmitting layer 130 has a plurality of openings O1. The plurality of light-emitting elements 120 are respectively disposed in the plurality of openings O1, and the plurality of light-emitting elements 120 are respectively electrically connected to the circuit substrate 110. For example, two electrodes (not shown) of each light emitting element 120 may be electrically connected to two pads (not shown) disposed on the circuit substrate 110 , respectively.

The light shielding layer 140 is disposed on the first light-transmitting layer 130, and the light shielding layer 140 may have a plurality of openings O2, wherein the plurality of openings O2 may overlap the plurality of openings O1 respectively. In some embodiments, the opening O2 completely overlaps the opening O1, and the size of the opening O2 is similar to or equal to the size of the opening O1. In some embodiments, the size of the opening O2 is smaller than the size of the opening O1. In some embodiments, the size of the opening O2 is larger than the size of the opening O1.

The second light-transmitting layer 150 is provided on the light-shielding layer 140, and the second light-transmitting layer 150 is provided in the opening O1 and the opening O2. In this way, the second light-transmitting layer 150 can cover the light-emitting element 120 to protect the light-emitting element 120 from environmental damage. In some embodiments, the refractive index of the second light-transmitting layer 150 is greater than the refractive index of the first light-transmitting layer 130 , thereby increasing the forward light extraction ratio of the light-emitting element 120 .

The display device 10 may further include a third light-transmitting layer 160 . The third light-transmitting layer 160 may be located on the second light-transmitting layer 150 , and the refractive index of the third light-transmitting layer 160 is greater than that of the second light-transmitting layer 150 , so as to increase the forward light emission ratio of the light-emitting element 120 .

The display device 10 may further include a light-transmitting structure TS. The light-transmitting structure TS may be disposed between the third light-transmitting layer 160 and the second light-transmitting layer 150 , and the light-transmitting structure TS has a plurality of openings O3, wherein the plurality of openings O3 The orthographic projection of the circuit substrate 110 completely overlaps the plurality of openings O2 with the orthographic projection of the circuit substrate 110 . In other words, the diameter D3 of the opening O3 is not larger than the diameter D2 of the opening O2. In addition, the side wall SW of the light-transmitting structure TS and the bottom surface BS may have an included angle θ3, and 90<θ3≤160°. For example, the included angle θ3 may be 95°, 120° or 150°. In some embodiments, the included angle θ3 may be between 110° and 120°, for example, the included angle θ3 may be 115°. In this way, the opening O3 may have a diameter that tapers in a direction away from the light-emitting element 120, thereby enhancing the guiding effect of the light-transmitting structure TS on the forward light emission.

In some embodiments, the refractive index of the third light-transmitting layer 160 is greater than the refractive index of the light-transmitting structure TS, thereby increasing the forward light emission ratio of the light-emitting element 120 . In addition, the relationship between the refractive index of the light-transmitting structure TS and the refractive index of the second light-transmitting layer 150 is not particularly limited, and the refractive index of the light-transmitting structure TS can be greater than, equal to, or less than the refractive index of the second light-transmitting layer 150 .

The display device 10 may further include a cover CV, which may be located on the third light-transmitting layer 160, such that the third light-transmitting layer 160 is located between the cover CV and the light-transmitting structure TS, and the light-emitting element 120, the first transparent layer 160, and the light-transmitting structure TS. The light layer 130 , the light-shielding layer 140 and the second light-transmitting layer 150 may be located between the light-transmitting structure TS and the third light-transmitting layer 160 and the circuit substrate 110 .

Referring to FIG. 4 , in this embodiment, the display device 10 may include multiple pixels PX, and the multiple pixels PX may be arranged in an array, but the invention is not limited thereto. In some embodiments, each pixel PX may also include three sub-pixels PX1, PX2, and PX3, and the three sub-pixels PX1, PX2, and PX3 may be arranged along the first direction C1. In some embodiments, the three sub-pixels PX1, PX2, and PX3 may be arranged along the second direction C2. For example, the sub-pixels PX1, PX2, and PX3 can respectively present different colors. For example, the light-emitting element 120 in the sub-pixel PX1 is a red light-emitting diode, and the light-emitting element 120 in the sub-pixel PX2 is a green light-emitting diode. body, the light-emitting element 120 in the sub-pixel PX3 is a blue light-emitting diode, but the invention is not limited to this. In some embodiments, each sub-pixel PX1, PX2, PX3 may have two openings O3 of the light-transmitting structure TS, where the first opening O3 corresponds to the massively transferred light-emitting element 120, and the second opening O3 O3 corresponds to the re-installed light emitting element 120 . For example, when a large amount of the light-emitting elements 120 that are transferred to the position corresponding to the first opening O3 on the circuit substrate 110 cannot operate normally, the light-emitting elements 120 can be re-installed in the position corresponding to the second opening O3 on the circuit substrate 110 .

FIG. 5 is a simulation diagram of the relative intensity of light emitted by the display device 10 according to an embodiment of the present invention. As can be seen from Figure 5, compared with the display device (#1) that is only provided with light-emitting elements and no protective layer, the relative intensity of the light emitted by the conventional display device (#3) with a protective layer is lost by 40%. However, compared with the display device (#1), the display device 10 (#2) according to an embodiment of the present invention further improves the relative intensity of light emission by 10%, confirming that the display device 10 according to the present invention indeed has improved The relative intensity of forward light emission.

Table 1 below shows simulation data of the ratio of the diameter D2 of the opening O2 to the diameter D3 of the opening O3 and the relative intensity of the light emitted by the display device 10 . It can be seen from Table 1 below that when D2/D3 is between 10/7 and 10/4 (ie, 10/7 and 5/2), the relative intensity of the light emitted by the display device 10 is significantly improved. D2/D3 Relative intensity of light output 10:8.5 0.085 10:7.6 0.94 10:6.7 1.04 10:5.6 1.07 10:4.7 1.09 10:3.6 0.91 10:2.4 0.94 10:0.97 0.899 [Table I]

Table 2 below shows the simulation data of the ratio of the thickness H1 of the third light-transmitting layer 160 to the height H2 of the light-transmitting structure TS and the relative intensity of light emitted by the display device 10. As can be seen from Table 2 below, when H1/H2 is between 10/1.2 and 10/2.5 (i.e., 25/3 to 4), the relative intensity of light emitted by the display device 10 is significantly improved. H1/H2 Relative light intensity 10 : 0.9 0.855559 10 : 1.1 0.93337 10 : 1.3 1.031462 10 : 1.5 1.104831 10 : 1.7 1.105934 10 : 1.9 1.06614 10 : 2.1 1.055663 10 : 2.3 1.048219 10 : 2.5 1.100328 [Table II]

In the following, other embodiments of the present invention are further described using FIGS. 6A to 6C , and the component numbers and related contents of the embodiments of FIGS. 1A to 3B are used, wherein the same numbers are used to represent the same or similar components, and the description of the same technical contents is omitted. For the description of the omitted parts, reference can be made to the embodiments of FIGS. 1A to 3B , and they will not be repeated in the following description.

6A to 6C are partial cross-sectional schematic diagrams of the steps of a manufacturing method of the display device 20 according to an embodiment of the present invention. Compared with the step flow of the manufacturing method of the display device 10 shown in FIGS. 1A to 3B , the step flow of the manufacturing method of the display device 20 shown in FIGS. 6A to 6C is mainly different in: The manufacturing method uses the step flow shown in FIG. 6A to replace the step flow of FIGS. 1C to 1D, and uses the step flow shown in FIG. 6B to replace the step flow of FIG. 2B, to obtain the display device 20 shown in FIG. 6C.

Specifically, please refer to FIG. 6A , an opening O4 can be formed in the first light-transmitting layer 130 , the opening O4 exposes the light-emitting element 120 and part of the circuit substrate 110 , and the orthographic projection of the light-emitting element 120 on the circuit substrate 110 completely overlaps the opening O4 Orthographic projection on the circuit substrate 110 . In this embodiment, the sidewall W4 of the opening O4 of the first light-transmitting layer 130 may have only one slope. In addition, there may be an included angle θ4 between the side wall W4 of the opening O4 and the surface F1 of the circuit substrate 110, and 0<θ4<90°. For example, the included angle θ4 may be about 40°, 60° or 80°.

In addition, referring to FIG. 6B , in this embodiment, the mold MD can be used to heat cure the fourth light-transmitting layer 170 to form the light-transmitting structure TS. For example, the mold MD can have an appearance that complements the light-transmitting structure TS. After forming the fourth light-transmitting layer 170 on the third light-transmitting layer 160, the mold MD can be placed in the fourth light-transmitting layer 170 and the mold MD can be in contact with the third light-transmitting layer 160. Then, the fourth light-transmitting layer 170 can be heated to cure the fourth light-transmitting layer 170 to form the light-transmitting structure TS.

6C , the display device 20 includes: a circuit substrate 110, a plurality of light-emitting elements 120, a first light-transmitting layer 130, a light-shielding layer 140, a second light-transmitting layer 150, a light-transmitting structure TS, a third light-transmitting layer 160, and a cover plate CV. The plurality of light-emitting elements 120 are respectively disposed in the plurality of openings O1 of the first light-transmitting layer 130, and the orthographic projection of the light-emitting element 120 on the circuit substrate 110 completely overlaps the orthographic projection of the opening O3 of the light-transmitting structure TS on the circuit substrate 110.

Compared with the display device 10 shown in FIG. 3B , the display device 20 shown in FIG. 6C is different mainly in that the side wall W4 of the opening O4 in the first light-transmitting layer 130 of the display device 20 may have only one slope, that is, the angle θ2 shown in FIG. 1D may be equal to the angle θ1. In this embodiment, the relative intensity of the forward light output of the display device 20 can be improved by the structural design of the first light-transmitting layer 130, the light-shielding layer 140, and the second light-transmitting layer 150. In addition, by making the refractive index of the second light-transmitting layer 150 greater than the refractive index of the first light-transmitting layer 130, the relative intensity of the forward light output of the display device 20 can also be improved. In addition, the improvement effect of the relative intensity of the forward light output of the display device 20 can be further enhanced through the structural design of the light-transmitting structure TS and the third light-transmitting layer 160 and the design of the angle θ3 of the light-transmitting structure TS.

To sum up, the display device of the present invention can improve the relative intensity of forward light emission of the display device through the structural design of the first light-transmitting layer, the light-shielding layer and the second light-transmitting layer. Furthermore, the display device of the present invention can also increase the relative intensity of forward light emission of the display device by making the refractive index of the second light-transmitting layer greater than the refractive index of the first light-transmitting layer. In addition, the display device of the present invention can further enhance the improvement effect of the relative intensity of forward light emission of the display device through the structural design of the light-transmitting structure and the third light-transmitting layer and the angle design of the light-transmitting structure.

Although the present invention has been disclosed as above by the embodiments, they are not intended to limit the present invention. Any person with ordinary knowledge in the relevant technical field can make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be defined by the scope of the attached patent application.

10,20: display device 110: circuit substrate 112: bottom plate 114: driving circuit layer 120: light-emitting element 130: first light-transmitting layer 140: light-shielding layer 150: second light-transmitting layer 160: third light-transmitting layer 170: fourth light-transmitting layer A-A’: section line AH: adhesive layer BS: bottom surface C1: first direction C2: second direction CV: cover plate D2,D3: aperture F1,F2: surface H1: thickness H2: height LB: beam MD: mold MK: mask O1,O2,O3,O4,OP1,PO1,PO2: opening PX: pixel PX1,PX2,PX3: sub-pixel SW: side wall TS: light-transmitting structure W1, W2, W4: side wall θ1, θ2, θ3, θ4: angle

1A to 3B are partial cross-sectional schematic diagrams of the steps of a manufacturing method of the display device 10 according to an embodiment of the present invention. FIG. 4 is a partial top view of the display device 10 according to an embodiment of the present invention. FIG. 5 is a simulation diagram of the relative intensity of light emitted by the display device 10 according to an embodiment of the present invention. 6A to 6C are partial cross-sectional schematic diagrams of the steps of a manufacturing method of the display device 20 according to an embodiment of the present invention.

10:Display device

110:Circuit substrate

112: Base plate

114: Driver circuit layer

120:Light-emitting component

130: First light-transmitting layer

140:Light shielding layer

150: Second light-transmitting layer

160: The third light-transmitting layer

AH: Adhesive layer

BS: bottom surface

CV: cover

D2,D3: caliber

F1, F2: surface

H1:Thickness

H2: height

O1,O2,O3: opening

SW: side wall

TS: Translucent structure

θ3: included angle

Claims (14)

A display device includes: a circuit substrate; a first light-transmitting layer, located on the circuit substrate and having a plurality of first openings; a plurality of light-emitting elements, respectively disposed in the plurality of first openings and electrically connected to the circuit substrate; a light-shielding layer, located on the first light-transmitting layer and having a plurality of second openings, wherein the plurality of second openings respectively overlap the plurality of first openings; and a second light-transmitting layer, disposed in the plurality of first openings and the plurality of second openings and on the light-shielding layer. The display device according to claim 1, wherein the refractive index of the second light-transmitting layer is greater than the refractive index of the first light-transmitting layer. The display device according to claim 1, wherein the first opening has a first side wall, and there is an included angle θ1 between the first side wall and the surface of the circuit substrate, and 0<θ1<90°. The display device according to claim 3, wherein the first opening has a second side wall, the first side wall is located between the second side wall and the circuit substrate, and the extension direction of the second side wall is consistent with the second side wall. There is an included angle θ2 between the surfaces of the circuit substrate, and θ1<θ2≤90°. The display device as described in claim 1 further includes a third light-transmitting layer located on the second light-transmitting layer, and the refractive index of the third light-transmitting layer is greater than the refractive index of the second light-transmitting layer. The display device according to claim 5, further comprising a cover plate, and the third light-transmitting layer is located between the cover plate and the circuit substrate. The display device as described in claim 5 further includes a light-transmitting structure located between the third light-transmitting layer and the second light-transmitting layer, and the light-transmitting structure has a plurality of third openings, wherein the plurality of third openings respectively completely overlap the plurality of second openings. The display device according to claim 7, wherein there is an included angle θ3 between the side wall and the bottom surface of the light-transmitting structure, and 90<θ3≤160°. A display device as described in claim 7, wherein the refractive index of the third light-transmitting layer is greater than the refractive index of the light-transmitting structure. The display device according to claim 7, wherein the ratio of the diameter of the second opening to the diameter of the third opening is between 10/7 and 5/2. A display device as described in claim 7, wherein the ratio of the thickness of the third light-transmitting layer to the height of the light-transmitting structure is between 25/3 and 4. A manufacturing method of a display device, including: Arrange multiple light-emitting elements on the circuit substrate; Forming a first light-transmitting layer on the circuit substrate, and the first light-transmitting layer has a plurality of first openings, wherein the plurality of light-emitting elements respectively completely overlap the plurality of first openings; A light-shielding layer is formed on the first light-transmitting layer, and the light-shielding layer has a plurality of second openings, wherein the plurality of second openings respectively overlap the plurality of first openings; Forming a second light-transmitting layer on the light-shielding layer, and filling the second light-transmitting layer into the plurality of first openings and the plurality of second openings; Form a third light-transmitting layer on the cover plate; Forming a light-transmitting structure on the third light-transmitting layer, and the light-transmitting structure has a plurality of third openings; and The circuit substrate and the cover are paired so that the light-transmitting structure and the plurality of light-emitting elements are located between the circuit substrate and the cover, and the plurality of second openings overlap and correspond to each other. of the third opening. The manufacturing method of the display device as described in claim 12 further includes forming an adhesive layer on the second light-transmitting layer before the pairing, and after the pairing, filling the adhesive layer into the plurality of third openings. The manufacturing method of a display device according to claim 13, wherein the material of the adhesive layer is the same as the material of the third light-transmitting layer.

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