TW202407163A - Plating method and plating device capable of reliably reducing power supply variations during plating processing and improving uniformity of the thickness of the plating formed on the substrate - Google Patents
Plating method and plating device capable of reliably reducing power supply variations during plating processing and improving uniformity of the thickness of the plating formed on the substrate Download PDFInfo
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Abstract
Description
本發明係關於一種鍍覆方法、及鍍覆裝置。The invention relates to a plating method and a plating device.
鍍覆裝置之一例習知有杯式之電解鍍覆裝置。杯式之電解鍍覆裝置係使將被鍍覆面朝向下方而保持於基板固持器之基板(例如半導體晶圓)浸漬於鍍覆液,並藉由在基板與陽極之間施加電壓,而使基板表面析出導電膜(參照專利文獻1及2)。An example of a plating device is a cup-type electrolytic plating device. Cup-type electrolytic plating equipment immerses a substrate (such as a semiconductor wafer) held in a substrate holder with the plated surface facing downwards in a plating liquid, and applies a voltage between the substrate and the anode. A conductive film is deposited on the surface (see Patent Documents 1 and 2).
在此種鍍覆裝置之基板固持器中設置有與基板接觸用於饋電之接點構件。此外,基板固持器具備在鍍覆處理中避免鍍覆液接觸接點構件而密封之密封構件。 [先前技術文獻] [專利文獻] The substrate holder of such a plating device is provided with a contact member that is in contact with the substrate for feeding power. In addition, the substrate holder is provided with a sealing member that prevents the plating liquid from contacting the contact member during the plating process and seals the contact member. [Prior technical literature] [Patent Document]
[專利文獻1]日本專利第7047200號公報 [專利文獻2]日本專利第7081063號公報 [專利文獻3]美國專利申請公開第2017/0056934號說明書 [Patent Document 1] Japanese Patent No. 7047200 [Patent Document 2] Japanese Patent No. 7081063 [Patent Document 3] U.S. Patent Application Publication No. 2017/0056934
(發明所欲解決之問題)(Invent the problem you want to solve)
當接點構件上存在污垢,或是附著有鍍覆液時,在鍍覆處理時會產生饋電偏差,所形成之鍍覆厚度的均勻性降低。專利文獻3中記載有對電接點噴出清洗液之清洗裝置。專利文獻1及2係藉由以清洗液均勻地濕潤整個接點構件,避免鍍覆處理時產生饋電偏差。因而希望不需要繁雜之作業,可更確實減少鍍覆處理時之饋電偏差。When there is dirt on the contact member or plating liquid adheres to it, feed deviation will occur during the plating process, and the uniformity of the resulting plating thickness will be reduced. Patent Document 3 describes a cleaning device that sprays cleaning fluid onto electrical contacts. Patent Documents 1 and 2 avoid feed deviation during plating by uniformly moistening the entire contact component with cleaning fluid. Therefore, it is hoped that complicated operations will not be required and the feed deviation during the plating process can be more reliably reduced.
本發明係鑑於上述問題者。其目的之一係提供一種不需要繁雜之作業,可更確實減少鍍覆處理時之饋電偏差,可使形成於基板之鍍覆厚度的均勻性提高之鍍覆方法、及鍍覆裝置。 (解決問題之手段) The present invention was made in view of the above problems. One of its purposes is to provide a plating method and a plating device that do not require complicated operations, can more reliably reduce feed deviation during plating processing, and can improve the uniformity of the plating thickness formed on a substrate. (a means of solving problems)
本發明一個形態提供一種鍍覆方法,係藉由具備基板固持器之鍍覆裝置進行基板的鍍覆處理,前述基板固持器包含可導通地接觸前述基板之接點構件。前述鍍覆方法包含以下步驟:使前述基板固持器傾斜;在前述基板固持器傾斜狀態下,使前述基板固持器以第一旋轉速度旋轉;以在前述接點構件上供給液體之方式,朝向以前述第一旋轉速度旋轉之前述基板固持器吐出前述液體;停止前述吐出前述液體;在停止前述吐出前述液體之前或以後的指定時間內,開始將前述基板固持器向水平位置減少傾斜;在前述基板固持器在前述水平位置之狀態下,使前述基板固持器以比前述第一旋轉速度快之第二旋轉速度旋轉;停止前述基板固持器的前述第二旋轉速度的旋轉;在停止了前述旋轉之前述基板固持器安裝前述基板;及對安裝後之前述基板進行前述鍍覆處理。One aspect of the present invention provides a plating method in which a substrate is plated using a plating device provided with a substrate holder. The substrate holder includes a contact member that electrically contacts the substrate. The aforementioned plating method includes the following steps: tilting the substrate holder; rotating the substrate holder at a first rotation speed while the substrate holder is tilted; and supplying liquid on the contact member toward the contact member. The substrate holder discharges the liquid before the rotation at the first rotation speed; stops the discharge of the liquid; and within a specified time before or after stopping the discharge of the liquid, starts to tilt the substrate holder less toward the horizontal position; while the substrate With the holder in the horizontal position, the substrate holder is rotated at a second rotation speed faster than the first rotation speed; the rotation of the substrate holder at the second rotation speed is stopped; after stopping the rotation, The substrate holder mounts the substrate; and performs the plating process on the mounted substrate.
本發明另外一個形態提供一種鍍覆裝置,係具備:基板固持器,其係包含可導通地接觸基板之接點構件;及控制裝置。該鍍覆裝置之控制裝置係以使前述基板固持器傾斜,在前述基板固持器傾斜狀態下,使前述基板固持器以第一旋轉速度旋轉,以在前述接點構件上供給液體之方式,朝向以前述第一旋轉速度旋轉之前述基板固持器吐出前述液體,停止前述吐出前述液體,在停止前述吐出前述液體之前或以後的指定時間內,開始將前述基板固持器向水平位置減少傾斜,在前述基板固持器在前述水平位置之狀態下,使前述基板固持器以比前述第一旋轉速度快之第二旋轉速度旋轉,停止前述基板固持器的前述第二旋轉速度的旋轉,在停止了前述旋轉之前述基板固持器安裝前述基板,對安裝後之前述基板進行前述鍍覆處理的方式而構成。Another aspect of the present invention provides a plating device, which includes: a substrate holder including a contact member that can conductively contact the substrate; and a control device. The control device of the plating device tilts the substrate holder, and in the tilted state of the substrate holder, rotates the substrate holder at a first rotational speed to supply liquid on the contact member. The substrate holder discharges the liquid before rotating at the first rotation speed, stops the discharge of the liquid, and starts to tilt the substrate holder less toward the horizontal position within a specified time before or after stopping the discharge of the liquid. With the substrate holder in the horizontal position, the substrate holder is rotated at a second rotation speed faster than the first rotation speed, and the rotation of the substrate holder at the second rotation speed is stopped. After the rotation is stopped, The substrate holder is mounted with the substrate, and is configured to perform the plating process on the mounted substrate.
以下,參照圖式說明本發明之實施形態。以下說明之圖式中,對相同或相當之構成元件註記相同符號,並省略重複之說明。 <鍍覆裝置之整體構成> Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the drawings described below, the same or equivalent components are denoted by the same symbols, and repeated descriptions are omitted. <Overall structure of plating equipment>
圖1係顯示本實施形態之鍍覆裝置1000的整體構成之立體圖。圖2係顯示鍍覆裝置1000之整體構成的俯視圖。如圖1及圖2所示,鍍覆裝置1000具備:裝載埠100、搬送機器人110、對準器120、預濕模組200、預浸模組300、鍍覆模組400、清洗模組500、自旋沖洗乾燥機600、搬送裝置700、及控制模組800。FIG. 1 is a perspective view showing the overall structure of the plating apparatus 1000 according to this embodiment. FIG. 2 is a top view showing the overall structure of the plating device 1000. As shown in FIGS. 1 and 2 , the plating device 1000 includes a loading port 100 , a transfer robot 110 , an aligner 120 , a prewet module 200 , a prepreg module 300 , a
裝載埠100係用於將收納於無圖示之FOUP等匣盒的基板搬入鍍覆裝置1000,並從鍍覆裝置1000搬出基板至匣盒的模組。本實施形態係在水平方向並列配置4台裝載埠100,不過,裝載埠100之數量及配置不拘。搬送機器人110係用於搬送基板之機器人,且係以在裝載埠100、對準器120、及搬送裝置700之間交接基板的方式而構成。搬送機器人110及搬送裝置700在搬送機器人110與搬送裝置700之間交接基板時,可經由無圖示之暫放台來進行基板的交接。The loading port 100 is a module for loading a substrate stored in a cassette such as a FOUP (not shown) into the plating apparatus 1000 and unloading the substrate from the plating apparatus 1000 to the cassette. In this embodiment, four load ports 100 are arranged side by side in the horizontal direction. However, the number and arrangement of the load ports 100 are not limited. The transfer robot 110 is a robot used to transfer substrates, and is configured to transfer substrates between the loading port 100 , the aligner 120 , and the transfer device 700 . When the transfer robot 110 and the transfer device 700 transfer the substrate between the transfer robot 110 and the transfer device 700 , the transfer of the substrate can be performed via a temporary placement table (not shown).
對準器120係用於使基板之定向平面及凹口(notch)等的位置對準指定方向之模組。本實施形態係在水平方向並列配置2台對準器120,不過對準器120之數量及配置不拘。預濕模組200藉由將鍍覆處理前之基板的被鍍覆面以純水或脫氣水等之處理液(預濕液)濕潤,而將形成於基板表面之圖案內部的空氣替換成處理液。預濕模組200在鍍覆時係實施藉由將圖案內部之處理液替換成鍍覆液,而容易在圖案內部供給鍍覆液之預濕處理的方式而構成。本實施形態係在上下方向並列配置2台預濕模組200,不過預濕模組200之數量及配置不拘。The aligner 120 is a module used to align the orientation planes and notches of the substrate in a specified direction. In this embodiment, two aligners 120 are arranged side by side in the horizontal direction, but the number and arrangement of the aligners 120 are not limited. The pre-wetting module 200 wets the plated surface of the substrate before plating treatment with a treatment liquid (pre-wet liquid) such as pure water or degassed water, thereby replacing the air inside the pattern formed on the surface of the substrate with the treatment liquid. liquid. The prewetting module 200 is configured to perform prewetting treatment by replacing the treatment liquid inside the pattern with the plating liquid during plating, thereby easily supplying the plating liquid inside the pattern. In this embodiment, two pre-moistening modules 200 are arranged side by side in the vertical direction, but the number and arrangement of the pre-moistening modules 200 are not limited.
預浸模組300係以實施以硫酸或鹽酸等處理液蝕刻除去例如形成於鍍覆處理前之基板被鍍覆面的種層表面等上存在之電阻大的氧化膜,並清洗或活化鍍覆基底表面之預浸處理的方式而構成。本實施形態係在上下方向並列配置2台預浸模組300,不過預浸模組300之數量及配置不拘。鍍覆模組400對基板實施鍍覆處理。本實施形態有兩組分別在上下方向並列3台且在水平方向並列4台而配置12台之鍍覆模組400,合計設有24台鍍覆模組400,不過鍍覆模組400之數量及配置不拘。The prepreg module 300 is etched with a treatment solution such as sulfuric acid or hydrochloric acid to remove, for example, an oxide film with high resistance existing on the surface of the seed layer formed on the plated surface of the substrate before the plating process, and to clean or activate the plated substrate. The surface is pre-impregnated. In this embodiment, two prepreg modules 300 are arranged in parallel in the up and down direction, but the number and arrangement of the prepreg modules 300 are not limited. The
清洗模組500係以為了除去殘留於鍍覆處理後之基板的鍍覆液等而對基板實施清洗處理之方式而構成。本實施形態係在上下方向並列配置2台清洗模組500,不過清洗模組500之數量及配置不拘。自旋沖洗乾燥機600係用於使清洗處理後之基板高速旋轉而乾燥的模組。本實施形態係在上下方向並列配置2台自旋沖洗乾燥機,不過自旋沖洗乾燥機之數量及配置不拘。搬送裝置700係用於在鍍覆裝置1000內之複數個模組間搬送基板的裝置。控制模組800係以控制鍍覆裝置1000之複數個模組的方式而構成,例如可由具備與作業人員之間的輸入輸出介面之一般電腦或專用電腦而構成。The cleaning module 500 is configured to perform a cleaning process on the substrate in order to remove the plating liquid and the like remaining on the substrate after the plating process. In this embodiment, two cleaning modules 500 are arranged side by side in the up and down direction, but the number and configuration of the cleaning modules 500 are not limited. The spin rinse dryer 600 is a module used to rotate and dry the cleaned substrate at high speed. In this embodiment, two spin rinse dryers are arranged side by side in the up and down direction, but the number and configuration of the spin rinse dryers are not limited. The transport device 700 is a device for transporting substrates between a plurality of modules in the plating device 1000 . The
說明鍍覆裝置1000實施之一連串鍍覆處理的一例。首先,將收納於匣盒之基板搬入裝載埠100。繼續,搬送機器人110從裝載埠100之匣盒取出基板,並將基板搬送至對準器120。對準器120將基板之定向平面及凹口(notch)等之位置對準指定的方向。搬送機器人110將經對準器120對準方向之基板送交搬送裝置700。An example of a series of plating processes performed by the plating apparatus 1000 will be described. First, the substrate stored in the cassette is loaded into the loading port 100 . Continuing, the transport robot 110 takes out the substrate from the cassette in the loading port 100 and transports the substrate to the aligner 120 . The aligner 120 aligns the position of the orientation plane, notch, etc. of the substrate in a specified direction. The transport robot 110 delivers the substrate aligned with the aligner 120 to the transport device 700 .
搬送裝置700將從搬送機器人110所接收之基板搬送至預濕模組200。預濕模組200對基板實施預濕處理。搬送裝置700將實施了預濕處理之基板搬送至預浸模組300。預浸模組300對基板實施預浸處理。搬送裝置700將實施了預浸處理之基板搬送至鍍覆模組400。鍍覆模組400對基板實施鍍覆處理。The transport device 700 transports the substrate received from the transport robot 110 to the premoistening module 200 . The pre-wetting module 200 performs pre-wetting treatment on the substrate. The transport device 700 transports the pre-wetted substrate to the prepreg module 300 . The prepreg module 300 performs prepreg treatment on the substrate. The transport device 700 transports the prepreg-processed substrate to the
搬送裝置700將實施了鍍覆處理之基板搬送至清洗模組500。清洗模組500對基板實施清洗處理。搬送裝置700將實施了清洗處理之基板搬送至自旋沖洗乾燥機600。自旋沖洗乾燥機600對基板實施乾燥處理。搬送裝置700將實施了乾燥處理之基板送交搬送機器人110。搬送機器人110將從搬送裝置700所接收之基板搬送至裝載埠100的匣盒。最後,從裝載埠100搬出收納有基板之匣盒。 <鍍覆模組之構成> The transport device 700 transports the plated substrate to the cleaning module 500 . The cleaning module 500 performs cleaning processing on the substrate. The transport device 700 transports the cleaned substrate to the spin rinse dryer 600 . The spin rinse dryer 600 performs a drying process on the substrate. The transfer device 700 transfers the dried substrate to the transfer robot 110 . The transfer robot 110 transfers the substrate received from the transfer device 700 to the cassette in the loading port 100 . Finally, the cassette containing the substrate is unloaded from the loading port 100 . <Composition of plating module>
其次,說明鍍覆模組400之構成。由於本實施形態中之24台鍍覆模組400係相同構成,因此僅說明1台鍍覆模組400。圖3係概略顯示本實施形態之鍍覆模組400的構成之縱剖面圖。如圖3所示,鍍覆模組400具備用於收容鍍覆液之鍍覆槽410。鍍覆槽410係具有圓筒狀之側壁與圓形的底壁之容器,且上部形成有圓形開口。此外,鍍覆模組400具備配置於鍍覆槽410之上部開口外側的溢流槽405。溢流槽405係用於接收從鍍覆槽410之上部開口溢出的鍍覆液之容器。Next, the structure of the
鍍覆模組400具備將鍍覆槽410之內部在上下方向隔開的隔膜420。鍍覆槽410鍍覆槽410之內部藉由隔膜420而隔開成陰極區域422與陽極區域424。陰極區域422與陽極區域424中分別裝填鍍覆液。在陽極區域424之鍍覆槽410的底面設置陽極430。並在陰極區域422中與隔膜420相對而配置抵抗體450。抵抗體450係用於在基板Wf之被鍍覆面Wf-a謀求鍍覆處理均勻化的構件,且藉由形成有許多孔之板狀構件而構成。只要可以希望之精度進行鍍覆處理,亦可不在鍍覆槽410中配置抵抗體450。The
鍍覆液只要是含有構成鍍覆皮膜之金屬元素的離子之溶液即可,其具體例並非特別限定者。鍍覆處理之一例可使用銅鍍覆處理,鍍覆液之一例可使用硫酸銅溶液。此外,本實施形態在鍍覆液中含有指定之添加劑。但是,並非限定於該構成者,鍍覆液亦可不含添加劑而構成。The plating solution is not particularly limited as long as it is a solution containing ions of metal elements constituting the plating film. As an example of the plating treatment, copper plating treatment can be used, and as an example of the plating solution, a copper sulfate solution can be used. In addition, in this embodiment, the plating solution contains specified additives. However, the structure is not limited to this, and the plating liquid may be constituted without additives.
陽極430之具體種類並非特別限定者,可使用溶解陽極或不溶解陽極。本實施形態中,陽極430係使用不溶解陽極。該不溶解陽極之具體種類並非特別限定者,可使用鉑或氧化銥等。The specific type of anode 430 is not particularly limited, and a dissolving anode or a non-dissolving anode may be used. In this embodiment, an insoluble anode is used as the anode 430 . The specific type of the insoluble anode is not particularly limited, and platinum, iridium oxide, etc. can be used.
此外,鍍覆模組400具備在將被鍍覆面Wf-a朝向下方之狀態下用於保持基板Wf的基板固持器440。鍍覆模組400具備用於使基板固持器440升降之第一升降機構442。第一升降機構442例如可藉由直動式之致動器等習知機構而實現。此外,鍍覆模組400具備基板Wf在將被鍍覆面Wf-a之中央垂直地延伸的虛擬之旋轉軸周圍旋轉的方式,用於使基板固持器440旋轉之旋轉機構446。旋轉機構446例如可藉由馬達等習知機構而實現。In addition, the
鍍覆模組400係以使用第一升降機構442將基板Wf浸漬於陰極區域422之鍍覆液,並使用旋轉機構446使基板Wf旋轉,而且藉由在陽極430與基板Wf之間施加電壓,而對基板Wf之被鍍覆面Wf-a實施鍍覆處理的方式而構成。The
此外,鍍覆模組400具備以使基板固持器440傾斜之方式而構成的傾斜機構447。傾斜機構447例如可藉由傾斜(Tilt)機構等習知機構而實現。In addition, the
鍍覆模組400具備對基板固持器440之後述的接點構件供給液體L1之液體供給裝置470。液體供給裝置470係以藉由朝向基板固持器440吐出液體L1,來對接點構件供給液體L1之方式而構成。供給至接點構件之液體L1係以覆蓋接點構件之至少一部分的方式而構成。液體供給裝置470具備:機械手臂474、驅動裝置476、托盤構件478、及液體供給噴嘴482。The
液體L1只要具有保護接點構件之效果即可,其組成不特別限定。液體L1宜具有指定值以下之電導度,或是經過脫氣處理。The composition of the liquid L1 is not particularly limited as long as it has the effect of protecting the contact member. Liquid L1 should have a conductivity below a specified value or be degassed.
液體L1之電導度宜為50μS/cm以下,更宜為10μS/cm以下。電導度高之液體存在於接點構件及基板Wf周圍時,除了通過接點構件與基板Wf之接觸部分的電流之外,還會有分路電流不通過該接觸部分,而係通過該液體在基板Wf的種層與接點構件之間流動。此時,藉由種層之銅離子化而溶解等,導致種層變薄而電阻增加,因而產生饋電偏差。當液體L1之電導度低時,可抑制此種饋電偏差。另外,關於分路電流之詳情請參照上述的專利文獻2。The conductivity of liquid L1 is preferably 50 μS/cm or less, more preferably 10 μS/cm or less. When a liquid with high electrical conductivity exists around the contact member and the substrate Wf, in addition to the current passing through the contact portion between the contact member and the substrate Wf, there will also be a shunt current that does not pass through the contact portion but passes through the liquid. There is flow between the seed layer of the substrate Wf and the contact member. At this time, due to ionization and dissolution of copper in the seed layer, the seed layer becomes thinner and the resistance increases, thereby causing a feed deviation. When the conductivity of the liquid L1 is low, this feed deviation can be suppressed. In addition, please refer to the above-mentioned Patent Document 2 for details on the shunt current.
當含有氧之液體存在於接點構件及基板Wf的周圍時,氧離子化而產生種層溶解於該液體之局部電池效應。例如,種層之銅對溶解氧賦予電子,而從溶解氧產生氫氧化物離子,並且銅成為銅離子而溶解。藉由局部電池效應,種層變薄而電阻增加,因而產生饋電偏差。對液體L1實施脫氣處理時,可抑制此種饋電偏差。另外,關於局部電池效應之詳情請參照上述的專利文獻2。When a liquid containing oxygen exists around the contact member and the substrate Wf, the oxygen is ionized to produce a local battery effect in which the seed layer is dissolved in the liquid. For example, copper in the seed layer donates electrons to dissolved oxygen, thereby generating hydroxide ions from the dissolved oxygen, and the copper becomes copper ions and dissolves. Through the local cell effect, the seed layer becomes thinner and the resistance increases, thus producing a feed deviation. When the liquid L1 is degassed, such feed deviation can be suppressed. In addition, please refer to the above-mentioned Patent Document 2 for details on the local cell effect.
從此等觀點而言,液體L1更宜為純水、離子交換水或脫氣水。From these viewpoints, liquid L1 is more preferably pure water, ion exchange water or degassed water.
液體供給噴嘴482吐出液體L1。液體供給噴嘴482為了覆蓋接點構件而吐出液體L1之外,亦可將液體L1作為清洗液來適切清洗接點構件。液體供給噴嘴482上連接無圖示之配管,液體供給噴嘴482吐出從無圖示之液源經由配管導入而供給的液體L1。使用液體供給裝置470供給液體L1之詳情敘述於後。The liquid supply nozzle 482 discharges the liquid L1. In addition to discharging the liquid L1 to cover the contact members, the liquid supply nozzle 482 may also use the liquid L1 as a cleaning liquid to appropriately clean the contact members. A pipe (not shown) is connected to the liquid supply nozzle 482 , and the liquid supply nozzle 482 discharges the liquid L1 introduced through the pipe from a liquid source (not shown). Details of supplying the liquid L1 using the liquid supply device 470 will be described later.
液體供給裝置470具備以使機械手臂474迴旋之方式而構成的驅動裝置476。驅動裝置476例如可藉由馬達等習知機構而實現。機械手臂474係從驅動裝置476在水平方向延伸之板狀構件。液體供給噴嘴482保持於機械手臂474上。驅動裝置476係以藉由使機械手臂474迴旋,而使液體供給噴嘴482在鍍覆槽410與基板固持器440之間的供給位置、以及從鍍覆槽410與基板固持器440之間退避的退避位置之間移動的方式而構成。The liquid supply device 470 includes a drive device 476 configured to rotate the robot arm 474 . The driving device 476 can be implemented by a conventional mechanism such as a motor. The robot arm 474 is a plate-shaped member extending in the horizontal direction from the driving device 476 . The liquid supply nozzle 482 is held on the robot arm 474 . The driving device 476 rotates the robot arm 474 to move the liquid supply nozzle 482 to a supply position between the plating tank 410 and the substrate holder 440 and to retract the liquid supply nozzle 482 from between the plating tank 410 and the substrate holder 440 It is constructed by moving between retreat positions.
液體供給裝置470具備配置於液體供給噴嘴482下方之托盤構件478。托盤構件478係以接收從液體供給噴嘴482吐出而供給至接點構件後落下的液體L1之方式而構成。本實施形態係將液體供給噴嘴482及機械手臂474收容於托盤構件478。驅動裝置476係以使液體供給噴嘴482、機械手臂474、及托盤構件478一起在供給位置與退避位置之間迴旋的方式而構成。不過,驅動裝置476亦可分別驅動液體供給噴嘴482及機械手臂474、與托盤構件478。The liquid supply device 470 includes a tray member 478 arranged below the liquid supply nozzle 482 . The tray member 478 is configured to receive the liquid L1 discharged from the liquid supply nozzle 482 and supplied to the contact member, and then dropped. In this embodiment, the liquid supply nozzle 482 and the robot arm 474 are accommodated in the tray member 478 . The driving device 476 is configured to rotate the liquid supply nozzle 482, the robot arm 474, and the tray member 478 together between the supply position and the retracted position. However, the driving device 476 can also drive the liquid supply nozzle 482, the robot arm 474, and the tray member 478 respectively.
圖4係示意性地顯示基板固持器440之縱剖面圖。基板固持器440具備:支撐基板Wf之支撐部490;用於與支撐部490一起夾著基板Wf之背板總成492;及從背板總成492鉛直地向上延伸之旋轉軸桿491。支撐部490具備:第一上部構件493;第二上部構件496;及用於支撐基板Wf之被鍍覆面Wf-a的外周部之支撐機構494。第一上部構件493保持第二上部構件496。圖示之例係第一上部構件493在概略水平方向延伸,而第二上部構件496係在概略鉛直方向延伸,不過不限定於此等。支撐機構494係在中央具有用於使基板Wf之被鍍覆面Wf-a露出的開口之環狀構件,且藉由第二上部構件496而懸吊保持。第二上部構件496可為設置在支撐機構494之環狀上面的1個以上之柱構件。FIG. 4 schematically shows a longitudinal cross-sectional view of the substrate holder 440 . The substrate holder 440 includes a support portion 490 that supports the substrate Wf; a back plate assembly 492 that clamps the substrate Wf together with the support portion 490; and a rotation shaft 491 that extends vertically upward from the back plate assembly 492. The support portion 490 includes a first upper member 493, a second upper member 496, and a support mechanism 494 for supporting the outer peripheral portion of the plated surface Wf-a of the substrate Wf. The first upper member 493 holds the second upper member 496. In the illustrated example, the first upper member 493 extends in a substantially horizontal direction, and the second upper member 496 extends in a substantially vertical direction, but the invention is not limited thereto. The support mechanism 494 is an annular member having an opening in the center for exposing the plated surface Wf-a of the substrate Wf, and is suspended and held by the second upper member 496. The second upper member 496 may be one or more column members provided on the annular upper surface of the support mechanism 494 .
背板總成492具備用於與支撐機構494一起夾著基板Wf之圓板狀的浮動板492-2。浮動板492-2配置於基板Wf之被鍍覆面Wf-a的背面側。此外,背板總成492具備配置於浮動板492-2之上方的圓板狀之背板492-1。此外,背板總成492具備:用於對浮動板492-2在從基板Wf背面離開之方向施力的浮動機構492-4;及用於抵抗浮動機構492-4之施加力,而將浮動板492-2按壓於基板Wf之背面的按壓機構492-3。The back plate assembly 492 includes a disk-shaped floating plate 492 - 2 for sandwiching the substrate Wf together with the support mechanism 494 . The floating plate 492-2 is arranged on the back side of the plated surface Wf-a of the substrate Wf. In addition, the back plate assembly 492 includes a disc-shaped back plate 492-1 arranged above the floating plate 492-2. In addition, the back plate assembly 492 is provided with: a floating mechanism 492-4 for urging the floating plate 492-2 in a direction away from the back surface of the substrate Wf; and a floating mechanism 492-4 for resisting the force exerted by the floating mechanism 492-4 and causing the floating plate to float The plate 492-2 is pressed against the pressing mechanism 492-3 on the back surface of the substrate Wf.
浮動機構492-4包含安裝於從浮動板492-2貫穿背板492-1而向上方延伸之軸桿的上端與背板492-1之間的壓縮彈簧。浮動機構492-4係以藉由壓縮彈簧之壓縮反作用力,經由軸桿而使浮動板492-2向上方抬起,並向從基板Wf之背面離開的方向施力之方式而構成。浮動機構492-4在以後之圖中省略圖示。The floating mechanism 492-4 includes a compression spring installed between the upper end of a shaft extending upward from the floating plate 492-2 through the backing plate 492-1 and the backing plate 492-1. The floating mechanism 492-4 is configured so that the floating plate 492-2 is lifted upward via the shaft by the compression reaction force of the compression spring and biased in a direction away from the back surface of the base plate Wf. The floating mechanism 492-4 is omitted from the subsequent figures.
按壓機構492-3係以藉由經由形成於背板492-1內部之流路供給流體至浮動板492-2,而將浮動板492-2按壓於下方之方式而構成。按壓機構492-3在供給有流體時,係以比浮動機構492-4引起之施加力更強的力對支撐機構494按壓基板Wf。The pressing mechanism 492-3 is configured to press the floating plate 492-2 downward by supplying fluid to the floating plate 492-2 through a flow path formed inside the back plate 492-1. When fluid is supplied, the pressing mechanism 492-3 presses the substrate Wf against the support mechanism 494 with a force stronger than the force exerted by the floating mechanism 492-4.
第一升降機構442使整個基板固持器440上升及下降(箭頭A10)。鍍覆模組400進一步具備第二升降機構443。第二升降機構443藉由直動式之致動器等習知機構而驅動,並使旋轉軸桿491及背板總成492對支撐部490上升及下降(箭頭A20)。The first lifting mechanism 442 raises and lowers the entire substrate holder 440 (arrow A10 ). The
圖5係放大基板固持器440之構成的一部分而示意性地顯示之縱剖面圖。支撐機構494包含用於支撐基板Wf之被鍍覆面Wf-a的外周部之環狀的支撐構件494-1。支撐構件494-1具有伸出背板總成492(浮動板492-2)之下面的外周部之凸緣494-1a。在凸緣494-1a之上配置環狀之密封構件494-2。密封構件494-2係具有彈性之構件。支撐構件494-1經由密封構件494-2而支撐基板Wf之被鍍覆面Wf-a的外周部。鍍覆處理基板Wf時,藉由以密封構件494-2與浮動板492-2夾著基板Wf來密封支撐構件494-1(基板固持器440)與基板Wf之間。FIG. 5 is an enlarged longitudinal cross-sectional view schematically showing a part of the structure of the substrate holder 440. The support mechanism 494 includes an annular support member 494 - 1 for supporting the outer peripheral portion of the plated surface Wf-a of the substrate Wf. The support member 494 - 1 has a flange 494 - 1 a extending from the outer peripheral portion of the lower surface of the back plate assembly 492 (floating plate 492 - 2 ). An annular sealing member 494-2 is arranged on the flange 494-1a. The sealing member 494-2 is an elastic member. The support member 494-1 supports the outer peripheral part of the plated surface Wf-a of the substrate Wf via the sealing member 494-2. When the substrate Wf is plated, the space between the support member 494-1 (substrate holder 440) and the substrate Wf is sealed by sandwiching the substrate Wf between the sealing member 494-2 and the floating plate 492-2.
支撐機構494具備:安裝於支撐構件494-1之內周面的環狀之基座494-3;及安裝於基座494-3之上面的環狀之導電構件494-5。基座494-3係具有導電性之構件,例如可包含不銹鋼或其他金屬。導電構件494-5係具有導電性之環狀構件,例如可包含銅或其他金屬。The support mechanism 494 includes: an annular base 494-3 installed on the inner peripheral surface of the support member 494-1; and an annular conductive member 494-5 installed on the upper surface of the base 494-3. The base 494-3 is a conductive component, which may include stainless steel or other metals, for example. The conductive member 494-5 is an annular member with conductivity, and may include copper or other metals, for example.
支撐機構494具備用於對基板Wf饋電之接點構件494-4。接點構件494-4藉由螺絲等而環狀地安裝於基座494-3之內周面。接點構件494-4之形狀只要可對基板Wf饋電即可,並無特別限定。例如,亦可環狀地並列配置拱狀之複數個接點構件494-4。支撐構件494-1經由基座494-3而保持接點構件494-4。接點構件494-4係具有用於從無圖示之電源對保持於基板固持器440的基板Wf饋電之導電性構件。接點構件494-4具有:與基板Wf之被鍍覆面Wf-a的外周部接觸之複數個基板接點494-4a;與延伸至比基板接點494-4a上方之本體部494-4b。接點構件494-4經由基板接點494-4a可導通地與基板Wf接觸。The support mechanism 494 is provided with a contact member 494-4 for feeding power to the substrate Wf. The contact member 494-4 is annularly attached to the inner peripheral surface of the base 494-3 by screws or the like. The shape of the contact member 494-4 is not particularly limited as long as it can feed power to the substrate Wf. For example, a plurality of arch-shaped contact members 494 - 4 may be arranged side by side in an annular shape. The support member 494-1 holds the contact member 494-4 via the base 494-3. The contact member 494 - 4 has a conductive member for feeding power from a power source (not shown) to the substrate Wf held by the substrate holder 440 . The contact member 494-4 has a plurality of substrate contacts 494-4a that are in contact with the outer peripheral portion of the plated surface Wf-a of the substrate Wf, and a body portion 494-4b that extends above the substrate contacts 494-4a. The contact member 494-4 is in conductive contact with the substrate Wf via the substrate contact 494-4a.
圖6係用於說明控制模組800之概念圖。控制模組800發揮控制鍍覆模組400之動作的控制裝置之功能。控制模組800備有微電腦等之電腦,該電腦具備:作為處理器之CPU(中央處理單元(Central Processing Unit))801;及作為暫時性或非暫時性記憶媒體之記憶體802等。控制模組800藉由CPU801動作來控制鍍覆模組400之被控制部。CPU801執行記憶於記憶體802之程式,或是藉由將記憶於無圖示之記憶媒體的程式讀入記憶體802來執行,可進行各種處理。程式例如包含:搬送機器人、搬送裝置之搬送控制、各處理模組中之處理的控制、在鍍覆模組400中之鍍覆處理的控制、執行液體供給處理之控制的程式;及檢測各種設備異常之程式。記憶媒體例如可使用可以電腦讀取之ROM、RAM、快閃記憶體等之記憶體、硬碟、CD-ROM、DVD-ROM及軟式磁碟等碟狀記憶媒體;或固態硬碟等之習知者。控制模組800可與統括控制鍍覆裝置1000及其他相關裝置之無圖示的上層控制器通信而構成,並在與上層控制器具有的資料庫之間可進行資料交換。控制模組800之一部分或全部功能亦可以ASIC等之硬體構成。控制模組800之一部分或全部功能亦可由PLC、定序器等構成。控制模組800之一部分或全部可配置於鍍覆裝置的框體內部及/或外部。控制模組800之一部分或全部可藉由有線及/或無線而與鍍覆裝置之各部通信地連接。FIG. 6 is a conceptual diagram illustrating the
圖7係顯示本實施形態之鍍覆方法的流程之流程圖。該鍍覆方法係藉由控制模組800之控制來進行。FIG. 7 is a flow chart showing the flow of the plating method according to this embodiment. The plating method is controlled by the
步驟S11係在預濕模組200中,對於在被鍍覆面Wf-a上設有種層之基板Wf進行預濕處理。預濕處理係藉由將鍍覆處理前之基板Wf的被鍍覆面Wf-a以純水或脫氣水等處理液濕潤,而將形成於基板表面之抗蝕圖案內部的空氣替換成處理液。步驟S11之後進行步驟S12。Step S11 is to perform pre-wetting treatment on the substrate Wf provided with the seed layer on the plated surface Wf-a in the pre-wet module 200. The pre-wet treatment is to wet the plated surface Wf-a of the substrate Wf before plating treatment with a treatment liquid such as pure water or degassed water, thereby replacing the air inside the resist pattern formed on the substrate surface with the treatment liquid. . After step S11, step S12 is performed.
步驟S12係在預浸模組300中對基板Wf進行預浸處理。預浸處理係以硫酸及鹽酸等處理液蝕刻除去例如存在於種層表面等之電阻大的氧化膜,並清洗或活化鍍覆基底表面。另外,預浸處理後,亦可以純水或脫氣水等之處理液清洗基板Wf。預濕處理後之基板Wf以此等處理液濕潤,基板Wf表面之抗蝕圖案的開口內以此等處理液填滿。在步驟S12之後進行步驟S13。步驟S12亦可省略,鍍覆裝置1000亦可不具備預浸模組300。Step S12 is to perform a prepreg process on the substrate Wf in the prepreg module 300 . The prepreg treatment is to use treatment solutions such as sulfuric acid and hydrochloric acid to etch and remove the oxide film with high resistance existing on the surface of the seed layer, etc., and clean or activate the surface of the plating substrate. In addition, after the pre-soaking process, the substrate Wf can also be cleaned with a treatment liquid such as pure water or degassed water. The pre-wetted substrate Wf is wetted with the processing liquid, and the openings of the resist pattern on the surface of the substrate Wf are filled with the processing liquid. Step S13 is performed after step S12. Step S12 may be omitted, and the plating device 1000 may not include the prepreg module 300 .
步驟S13係在鍍覆模組400中對基板Wf進行鍍覆處理。藉由控制模組800之控制,第一升降機構442及使基板固持器440水平移動之無圖示的水平移動機構使基板固持器440移動至基板Wf之位置,而將在步驟S11或S12以處理液濕潤之基板Wf安裝於基板固持器440。此時,基板固持器440藉由後述之步驟S15液體L1供給至接點構件494-4,形成接點構件494-4之至少一部分被液體L1覆蓋的狀態。在基板固持器440已安裝基板Wf後,基板固持器440藉由第一升降機構442下降,因而基板Wf浸漬於鍍覆液。然後,在陽極430與基板Wf之間施加電壓,來進行鍍覆處理。Step S13 is to perform a plating process on the substrate Wf in the
本實施形態之鍍覆處理因為係以液體L1覆蓋接點構件494-4之基板接點494-4a等,所以可抑制因局部電池效應或分路電流(shunt current)造成的饋電偏差。再者,基板Wf已安裝於基板固持器440時,在基板Wf之外周部與接點構件494-4碰觸的區域中若有濕潤之部分與乾燥之部分時,會成為饋電偏差的原因,而本實施形態是藉由液體L1均勻地覆蓋接點構件494-4來抑制。此外,為了抑制產生濕潤之部分與乾燥之部分,亦不需要使藉由預濕處理或預浸處理而濕潤之基板Wf乾燥,亦可防止因為該乾燥連被鍍覆面Wf-a亦乾燥而造成鍍覆不良。除此之外,還可藉由液體L1清洗或覆蓋接點構件494-4抑制基板Wf之外周部與接點構件494-4碰觸的區域的局部污垢造成饋電偏差。在步驟S13之後進行步驟S14。In the plating process of this embodiment, since the substrate contact 494-4a of the contact member 494-4 and the like are covered with the liquid L1, feed deviation caused by the local cell effect or shunt current can be suppressed. Furthermore, when the substrate Wf is mounted on the substrate holder 440, if there are wet parts and dry parts in the area where the outer peripheral part of the substrate Wf contacts the contact member 494-4, it may cause power supply deviation. , and this embodiment suppresses it by uniformly covering the contact member 494-4 with the liquid L1. In addition, in order to suppress the occurrence of wet parts and dry parts, it is not necessary to dry the substrate Wf that has been wetted by pre-wetting or pre-impregnation, and it is also possible to prevent the plated surface Wf-a from drying due to this drying. Poor plating. In addition, the liquid L1 can also be used to clean or cover the contact member 494-4 to prevent local dirt in the area where the outer peripheral portion of the substrate Wf contacts the contact member 494-4 from causing power feed deviation. Step S14 is performed after step S13.
步驟S14係進行清洗進行了鍍覆處理之基板Wf的基板清洗處理。鍍覆處理後使基板固持器440上升至鍍覆槽410之鍍覆液的液面上方,並藉由從無圖示之清洗液噴嘴供給的清洗液清洗基板Wf之被鍍覆面Wf-a。此時,亦可使基板固持器440及/或清洗液噴嘴旋轉,而將清洗液均勻地施加於基板Wf。藉由該基板清洗處理,可回收附著於基板Wf之鍍覆液而適切再利用,及/或藉由濕潤基板Wf之被鍍覆面Wf-a而防止被鍍覆面Wf-a乾燥。清洗液例如除了純水、脫氣水之外,還可為使用於預濕處理、預浸處理、清洗等之處理的液體。供基板清洗處理之基板Wf從基板固持器440拆卸,依序搬送至清洗模組500及自旋沖洗乾燥機600,供清洗處理及乾燥處理後搬送至裝載埠100之匣盒。在步驟S14之後進行步驟S15。Step S14 is a substrate cleaning process for cleaning the plated substrate Wf. After the plating process, the substrate holder 440 is raised above the liquid level of the plating liquid in the plating tank 410, and the plated surface Wf-a of the substrate Wf is cleaned by the cleaning liquid supplied from the cleaning liquid nozzle (not shown). At this time, the substrate holder 440 and/or the cleaning liquid nozzle may also be rotated to apply the cleaning liquid uniformly to the substrate Wf. Through this substrate cleaning process, the plating liquid adhering to the substrate Wf can be recovered and appropriately reused, and/or the plated surface Wf-a of the substrate Wf can be moistened to prevent the plated surface Wf-a from drying out. The cleaning liquid may be, for example, pure water or degassed water, or a liquid used for processes such as prewetting, presoaking, and cleaning. The substrate Wf for substrate cleaning processing is detached from the substrate holder 440 and transported to the cleaning module 500 and the spin rinse dryer 600 in sequence, and then transported to the cassette of the loading port 100 for cleaning and drying processing. Step S15 is performed after step S14.
在步驟S15中,對接點構件494-4進行液體供給處理。圖8係顯示液體供給處理之流程的流程圖。在步驟S1501中,控制模組800控制傾斜機構447,並使未配置基板Wf之基板固持器440傾斜。只要可以後述之步驟S1503對接點構件494-4供給液體L1即可,傾斜之角度並無特別限定。例如,基板固持器440可從水平傾斜3度~7度,並宜至傾斜5度之狀態。此處,所謂基板固持器440之傾斜,係指可配置於基板固持器440之基板Wf的傾斜,例如藉由浮動板492-2下面之從水平起的角度來表示。In step S15, liquid supply processing is performed on the contact point member 494-4. FIG. 8 is a flowchart showing the flow of liquid supply processing. In step S1501, the
圖9係用於說明步驟S1501之概念圖。包含支撐部490及背板總成492之整個基板固持器440藉由傾斜機構447而傾斜。在步驟S1501之後進行步驟S1502。FIG. 9 is a conceptual diagram for explaining step S1501. The entire substrate holder 440 including the support portion 490 and the back plate assembly 492 is tilted by the tilting mechanism 447 . Step S1502 is performed after step S1501.
在步驟S1502中,控制模組800控制旋轉機構446,使傾斜狀態之基板固持器440以第一旋轉速度旋轉。以下,將在步驟S1502之旋轉稱為第一旋轉。第一旋轉速度宜為8rpm以上,更宜為10rpm以上。第一旋轉速度變小時,大部分之液體L1藉由重力而從基板固持器440沿著傾斜落下,有時候無法藉由液體L1充分覆蓋接點構件494-4。第一旋轉速度宜為15rpm以下,更宜為12rpm以下。第一旋轉速度變大時,溢出之液體L1會從密封構件494-2上方之配置有接點構件494-4的區域飛散至更廣範圍。此時,會產生液體L1偏離托盤構件478而落下到鍍覆槽410,造成鍍覆液稀薄等之不良影響。從此等觀點而言,第一旋轉速度宜為8rpm以上,15rpm以下,更宜為10rpm以上,12rpm以下。In step S1502, the
圖10係用於說明步驟S1502之概念圖。圖10係以箭頭A30示意性地顯示基板固持器440之第一旋轉。在步驟S1502之後進行步驟S1503。FIG. 10 is a conceptual diagram for explaining step S1502. FIG. 10 schematically shows the first rotation of the substrate holder 440 with arrow A30. Step S1503 is performed after step S1502.
在步驟S1503中,控制模組800控制液體供給裝置470,並朝向基板固持器440吐出液體L1。液體L1之吐出係以對接點構件494-4供給液體L1之方式來進行。例如,係以液體L1直接接觸接點構件494-4之方式而從液體供給噴嘴482朝向接點構件494-4吐出液體L1。在吐出了液體L1狀態下,宜以第一旋轉速度旋轉基板固持器440至少1周以上。已供給之液體L1覆蓋接點構件494-4之至少一部分。In step S1503, the
圖11係用於說明步驟S1503之概念圖。藉由驅動裝置476驅動機械手臂474及托盤構件478,而液體供給噴嘴482移動至供給位置時,係以供給液體L1至接點構件494-4之方式,從液體供給噴嘴482吐出液體L1。在步驟S1503之後進行步驟S1504。步驟S1503除了供給液體至接點構件494-4之外,亦可以簡單之構成清洗接點構件494-4。FIG. 11 is a conceptual diagram for explaining step S1503. When the robot arm 474 and the tray member 478 are driven by the driving device 476, and the liquid supply nozzle 482 moves to the supply position, the liquid L1 is discharged from the liquid supply nozzle 482 in such a manner that the liquid L1 is supplied to the contact member 494-4. Step S1504 is performed after step S1503. In step S1503, in addition to supplying liquid to the contact member 494-4, the contact member 494-4 may also be simply cleaned.
在步驟S1504中,控制模組800控制液體供給裝置470停止吐出液體L1,並且控制傾斜機構447開始將基板固持器440向水平位置減少傾斜。此處,基板固持器440之開始減少傾斜係在停止吐出液體L1之前或在以後的指定時間內進行。In step S1504, the
將停止吐出液體L1之步驟稱為停止吐出步驟,並將開始減少基板固持器440之傾斜的步驟稱為減少傾斜步驟。停止吐出步驟之後,當不進行減少傾斜步驟而一定程度時間經過時,與接點構件494-4接觸之液體L1藉由重力而從傾斜之基板固持器440落下,導致接點構件494-4無法被液體L1充分覆蓋。另外,減少傾斜步驟之後,當不進行停止吐出步驟而一定程度時間經過時,吐出之液體L1從基板固持器440溢出,並偏離托盤構件478而向鍍覆槽410落下,造成鍍覆液稀薄。上述指定時間宜以不致產生此等問題之方式而預先設定。從該觀點而言,上述指定之時間宜為2秒以下,更宜為1秒以下,進一步更宜為0.5秒以下。停止吐出步驟與減少傾斜步驟更宜概略同時進行。The step of stopping discharging the liquid L1 is called a discharging stop step, and the step of starting to reduce the tilt of the substrate holder 440 is called a tilt reducing step. After stopping the discharging step, when a certain amount of time passes without performing the tilt reduction step, the liquid L1 in contact with the contact member 494-4 falls from the tilted substrate holder 440 by gravity, causing the contact member 494-4 to fail. Fully covered by liquid L1. In addition, after the tilt reduction step, when a certain amount of time elapses without performing the discharging stop step, the discharged liquid L1 overflows from the substrate holder 440 and deviates from the tray member 478 and falls toward the plating tank 410 , causing the plating liquid to become thin. The specified time mentioned above should be set in advance in a way that does not cause such problems. From this point of view, the above-specified time is preferably 2 seconds or less, more preferably 1 second or less, further more preferably 0.5 seconds or less. It is better to perform the steps of stopping discharging and reducing tilt at approximately the same time.
此處,所謂水平位置,為了希望程度均勻地形成鍍覆,而可藉由液體L1覆蓋充分範圍之接點構件494-4時,傾斜程度並無特別限定,不過,例如係指基板固持器440之傾斜小於1度等基板固持器440的姿態。Here, the horizontal position is not particularly limited when a sufficient range of the contact member 494 - 4 can be covered with the liquid L1 in order to achieve a desired degree of uniform plating. However, for example, it refers to the substrate holder 440 The tilt of the substrate holder 440 is less than 1 degree.
圖12係用於說明步驟S1504之後在水平位置之基板固持器440的概念圖。圖13係圖12中之接點構件494-4附近的放大剖面圖。圖示之例係在凸緣494-1a及密封構件494-2的上方,且基座494-3內側之配置有接點構件494-4的空間配置有液體L1。圖示之例係密封構件494-2發揮保持與接點構件494-4接觸之液體L1的液體保持部494L之功能。液體保持部494L係保持與接點構件494-4接觸之液體L1,不過不限定於此。在緊接步驟S1504之後,液體L1有的時候雖有接觸接點構件494-4之一部分,但是並非均勻地分布,而基板接點494-4a未被充分覆蓋。此時,當基板Wf已碰觸接點構件494-4而安裝於基板固持器440時,可能因為局部電池效應或分路電流(shunt current)等造成饋電偏差。在步驟S1504之後進行步驟S1505。FIG. 12 is a conceptual diagram illustrating the substrate holder 440 in a horizontal position after step S1504. FIG. 13 is an enlarged cross-sectional view of the vicinity of the contact member 494 - 4 in FIG. 12 . In the illustrated example, the liquid L1 is placed above the flange 494-1a and the sealing member 494-2, and in the space inside the base 494-3 where the contact member 494-4 is placed. In the illustrated example, the sealing member 494-2 functions as a liquid holding portion 494L that holds the liquid L1 in contact with the contact member 494-4. The liquid holding portion 494L holds the liquid L1 in contact with the contact member 494-4, but is not limited to this. Immediately after step S1504, although the liquid L1 sometimes contacts a part of the contact member 494-4, it is not evenly distributed, and the substrate contact 494-4a is not fully covered. At this time, when the substrate Wf has contacted the contact member 494-4 and is mounted on the substrate holder 440, the feed deviation may be caused by local cell effect or shunt current. Step S1505 is performed after step S1504.
在步驟S1505中,控制模組800控制旋轉機構446,停止基板固持器440之旋轉。在步驟S1505之後進行步驟S1506。In step S1505, the
在步驟S1506中,控制模組800控制第二升降機構443使背板總成492上升。背板總成492對支撐部490上升。當液體L1與背板總成492等接觸時,在後述之步驟S1507中,液體L1藉由表面張力而不均勻地分布,無法均勻地覆蓋接點構件494-4,因而成為饋電偏差的原因。藉由本步驟,背板總成492與接點構件494-4之間的距離增大,與接點構件494-4接觸之液體L1不易與背板總成492之例如浮動板492-2接觸。因而,在後述之步驟S1507中已使基板固持器440以第二旋轉速度而旋轉時,積存於液體保持部494L之液體L1藉由離心力而在全周更均勻地分布,因而更均勻地覆蓋接點構件494-4。另外,不限於背板總成492,亦可使與接點構件494-4相對之構件以從接點構件494-4離開之方式而移動。In step S1506, the
在步驟S1506之後進行步驟S1507。另外,只要可希望程度地均勻形成鍍覆,亦可省略步驟S1505及步驟S1506。Step S1507 is performed after step S1506. In addition, steps S1505 and S1506 may be omitted as long as the plating can be formed as uniformly as desired.
在步驟S1507中,控制模組800控制旋轉機構446,使基板固持器440以第二旋轉速度旋轉。將該旋轉稱為第二旋轉。第二旋轉速度設定成比第一旋轉速度大的速度。此處,第一旋轉速度及第二旋轉速度不受旋轉方向之影響而顯示旋轉速度大小的正值。第一旋轉與第二旋轉之方向亦可相同,亦可相反。In step S1507, the
第一旋轉速度雖然從步驟S1502所說明之觀點可設定旋轉速度,不過如圖13之說明,有的時候無法以液體L1充分覆蓋接點構件494-4。本案發明人發現藉由使基板固持器440以比第一旋轉速度大之第二旋轉速度旋轉,可更均勻地以液體L1覆蓋接點構件494-4。從該觀點而言,第二旋轉速度宜為30rpm以上。由於同樣之觀點及第二旋轉速度過大時係無效率使用電力,因此,例如第二旋轉速度更宜設定成40rpm以上,60rpm以下。The first rotation speed can be set from the viewpoint of step S1502. However, as illustrated in FIG. 13, the contact member 494-4 may not be fully covered with the liquid L1. The inventor of the present invention found that by rotating the substrate holder 440 at a second rotational speed that is greater than the first rotational speed, the contact member 494 - 4 can be covered with the liquid L1 more uniformly. From this point of view, the second rotation speed is preferably 30 rpm or more. From the same viewpoint and when the second rotation speed is too high, power is used inefficiently. Therefore, for example, the second rotation speed is more preferably set to 40 rpm or more and 60 rpm or less.
圖14係用於說明步驟S1507之基板固持器440的概念圖。步驟S1507係以第二旋轉速度旋轉在水平位置之基板固持器440。將第二旋轉以箭頭A40示意性地顯示。圖示之例因為係在步驟S1506,背板總成492已上升,所以在接點構件494-4附近不存在構件之空間擴大,可抑制因為液體L1與其他構件接觸造成的液體L1偏一邊。另外,省略步驟S1506時,在背板總成492已下降的狀態下進行第二旋轉,即使此時仍可獲得抑制液體L1偏一邊的一定效果。FIG. 14 is a conceptual diagram for explaining the substrate holder 440 in step S1507. Step S1507 is to rotate the substrate holder 440 in the horizontal position at the second rotation speed. The second rotation is shown schematically with arrow A40. In the example shown in the figure, because the back plate assembly 492 has been raised in step S1506, there is no space expansion of the component near the contact member 494-4, which can suppress the deflection of the liquid L1 caused by the contact of the liquid L1 with other components. In addition, when step S1506 is omitted, the second rotation is performed in a state where the back plate assembly 492 has been lowered. Even at this time, a certain effect of suppressing the liquid L1 from deflecting to one side can still be obtained.
圖15係步驟S1507之後在接點構件494-4附近的放大剖面圖。第二旋轉結果,接點構件494-4在遍及更廣的範圍抑制偏一邊且被液體L1覆蓋。例如,包含整個環狀之接點構件494-4可藉由液體L1覆蓋基板接點494-4a。在步驟S1507之後進行步驟S1508。FIG. 15 is an enlarged cross-sectional view of the vicinity of the contact member 494-4 after step S1507. As a result of the second rotation, the contact member 494 - 4 is suppressed from being deflected over a wider range and is covered with the liquid L1 . For example, the entire annular contact member 494 - 4 can cover the substrate contact 494 - 4 a with the liquid L1. Step S1508 is performed after step S1507.
在步驟S1508中,控制模組800控制旋轉機構446,停止基板固持器440之第二旋轉。在步驟S1508之後進行步驟S13(圖7)。In step S1508, the
本實施形態之鍍覆裝置及鍍覆方法係以控制模組800使基板固持器440傾斜,並在基板固持器440傾斜狀態下使基板固持器440以第一旋轉速度旋轉,並以供給液體L1至接點構件494-4之方式,朝向以第一旋轉速度旋轉之基板固持器440吐出液體L1,然後,停止吐出液體L1,並在停止吐出液體L1之前或以後的指定時間內,開始將基板固持器440向水平位置減少傾斜,於基板固持器440在水平位置狀態下,使基板固持器440以比第一旋轉速度快之第二旋轉速度旋轉,然後停止基板固持器440的第二旋轉速度之旋轉,並在停止旋轉之基板固持器440安裝基板Wf,再對安裝之基板Wf進行鍍覆處理的方式而構成。藉此,不需要繁雜之作業,可更確實減少鍍覆處理時之饋電偏差,可使形成於基板Wf之鍍覆厚度的均勻性提高。The plating device and plating method of this embodiment use the
以下之變化亦在本發明之範圍內,並可與上述實施形態或其他變化組合。以下之變化例中,關於顯示與上述實施形態同樣之構造、功能的部位等,以相同符號參照,並適切省略說明。 (變化例1) The following changes are also within the scope of the present invention and can be combined with the above-described embodiments or other changes. In the following modification examples, parts showing the same structures and functions as those in the above-mentioned embodiment are referred to with the same reference numerals, and descriptions thereof are omitted as appropriate. (Modification 1)
在上述實施形態之步驟S1503中,液體L1亦可朝向背板總成492吐出。特別是液體供給噴嘴482可將液體L1朝向浮動板492-2吐出,該浮動板492-2是在基板Wf已配置於基板固持器440時按壓基板Wf之板。In step S1503 of the above embodiment, the liquid L1 may also be discharged toward the back plate assembly 492 . In particular, the liquid supply nozzle 482 can discharge the liquid L1 toward the floating plate 492 - 2 that presses the substrate Wf when the substrate Wf is placed on the substrate holder 440 .
圖16係示意性地顯示藉由本變化例之鍍覆方法對接點構件494-4供給液體的方法之剖面圖。步驟S1503係背板總成492之浮動板492-2可配置於被接點構件494-4包圍的位置。液體供給噴嘴482係以朝向背板總成492之下面而從排出口482a吐出液體L1,並且接觸背板總成492下面而濺起之液體L1朝向本體部494-4b的方式而構成。接觸背板總成492下面而濺起之液體L1與本體部494-4b碰撞後,藉由重力從本體部494-4b流到下方。藉此,液體L1流入液體保持部494L。或是,附著於本體部494-4b及基板接點494-4a之鍍覆液與液體L1一起落下,而回收至托盤構件478。FIG. 16 is a cross-sectional view schematically showing a method of supplying liquid to the contact point member 494 - 4 by the plating method of this modification. Step S1503 is that the floating plate 492-2 of the back plate assembly 492 can be disposed at a position surrounded by the contact member 494-4. The liquid supply nozzle 482 is configured to discharge liquid L1 from the discharge port 482a toward the lower surface of the back plate assembly 492, and to contact the lower surface of the back plate assembly 492 and splash the liquid L1 toward the main body 494-4b. The liquid L1 splashed by contacting the lower surface of the back plate assembly 492 collides with the main body part 494-4b, and then flows downward from the main body part 494-4b by gravity. Thereby, the liquid L1 flows into the liquid holding part 494L. Alternatively, the plating liquid adhered to the main body part 494 - 4 b and the substrate contact 494 - 4 a falls together with the liquid L1 and is recovered to the tray member 478 .
採用本變化例時,與上述實施形態同樣地不需要繁雜之作業,可更確實地減少鍍覆處理時之饋電偏差。除此之外,採用本變化例時,可抑制安裝於基板固持器440之金屬構件(例如導電構件494-5)生鏽。亦即,將液體L1供給至接點構件494-4時,在接點構件494-4之上方或側方配置液體供給噴嘴482的技術,可能導致液體供給噴嘴482與背板總成492接觸,因此要將背板總成492退避到高的位置。如此,從液體供給噴嘴482吐出而與接點構件494-4碰撞之液體L1跳躍而附著於金屬構件(例如導電構件494-5)可能發生鏽蝕。為了避免液體L1跳躍而附著於金屬構件,需要精密控制液體供給噴嘴482之配置位置、液體L1之吐出角度、液體L1之吐出強度等,因此並不適宜。When this variation is adopted, complicated operations are not required as in the above-mentioned embodiment, and the feed deviation during the plating process can be more reliably reduced. In addition, when this modification is adopted, the metal members (such as the conductive members 494 - 5 ) mounted on the substrate holder 440 can be inhibited from rusting. That is, when the liquid L1 is supplied to the contact member 494-4, the technique of arranging the liquid supply nozzle 482 above or to the side of the contact member 494-4 may cause the liquid supply nozzle 482 to come into contact with the back plate assembly 492. Therefore, the back plate assembly 492 should be retreated to a high position. In this way, the liquid L1 discharged from the liquid supply nozzle 482 and colliding with the contact member 494 - 4 jumps and adheres to the metal member (for example, the conductive member 494 - 5 ), which may cause corrosion. In order to prevent the liquid L1 from jumping and adhering to metal members, it is necessary to precisely control the arrangement position of the liquid supply nozzle 482, the discharge angle of the liquid L1, the discharge intensity of the liquid L1, etc., so it is not suitable.
相對而言,本變化例係在基板固持器440之下方配置液體供給噴嘴482,並從基板固持器440之下方吐出液體L1。因此,由於可在被接點構件494-4包圍之位置形成空間,因此可在該空間內配置背板總成492。如圖16所示,由於背板總成492係成為面對比接點構件494-4上方之金屬構件(例如導電構件494-5)的牆壁,因此可抑制從液體供給噴嘴482吐出之液體L1跳躍到金屬構件。結果,採用本變化例時,不需要精密控制液體供給噴嘴482之配置位置、液體L1之吐出角度、液體L1之吐出強度等,而可簡單地供給液體L1至接點構件494-4。 (變化例2) In contrast, in this variation, the liquid supply nozzle 482 is disposed below the substrate holder 440 and discharges the liquid L1 from below the substrate holder 440 . Therefore, since a space can be formed at a position surrounded by the contact member 494 - 4 , the back plate assembly 492 can be disposed in the space. As shown in FIG. 16 , since the back plate assembly 492 serves as a wall facing the metal member (for example, the conductive member 494 - 5 ) above the contact member 494 - 4 , the liquid L1 ejected from the liquid supply nozzle 482 can be suppressed. Jump to the metal structure. As a result, according to this modification, there is no need to precisely control the arrangement position of the liquid supply nozzle 482, the discharge angle of the liquid L1, the discharge intensity of the liquid L1, etc., and the liquid L1 can be simply supplied to the contact member 494-4. (Modification 2)
上述實施形態中,液體供給噴嘴482亦可係直射噴嘴。In the above embodiment, the liquid supply nozzle 482 may be a direct injection nozzle.
圖17係示意性地顯示本變化例之液體供給噴嘴4820的圖。如圖17所示,液體供給噴嘴4820係直線狀吐出液體L1的直射噴嘴。藉由使用直射噴嘴,可在瞄準接點構件494-4之本體部494-4b的位置吐出液體L1。圖示之例係以液體L1直接接觸接點構件494-4之方式而從液體供給噴嘴4820吐出液體L1。 (變化例3) FIG. 17 is a diagram schematically showing the liquid supply nozzle 4820 of this modification. As shown in FIG. 17 , the liquid supply nozzle 4820 is a direct nozzle that discharges the liquid L1 linearly. By using the direct injection nozzle, the liquid L1 can be ejected at a position aimed at the main body portion 494-4b of the contact member 494-4. In the illustrated example, the liquid L1 is discharged from the liquid supply nozzle 4820 so that the liquid L1 directly contacts the contact member 494 - 4 . (Modification 3)
上述實施形態中,亦可調整吐出液體L1時之基板固持器440的旋轉方向等。In the above embodiment, the rotation direction of the substrate holder 440 when discharging the liquid L1 may also be adjusted.
圖18及圖19分別係示意性地顯示本變化例中在步驟S1503之吐出液體L1的俯視圖及側視圖。圖18係以虛線之圓示意性地顯示從鉛直方向上側觀看之基板固持器440。圖示之例係基板固持器440為逆時鐘方向旋轉(箭頭A50)。在傾斜之基板固持器440中,將傾斜的上側之端設為上端Hi,並將傾斜的下側之端設為下端Lo。18 and 19 are respectively a top view and a side view schematically showing the discharge of liquid L1 in step S1503 in this variation. FIG. 18 schematically shows the substrate holder 440 viewed from the upper side in the vertical direction as a dotted circle. In the illustrated example, the substrate holder 440 rotates in the counterclockwise direction (arrow A50 ). In the inclined substrate holder 440 , the inclined upper end is referred to as the upper end Hi, and the inclined lower end is referred to as the lower end Lo.
將吐出之液體L1碰撞基板固持器440的位置設為碰撞位置P1。基板固持器440之第一旋轉宜以在碰撞位置P1具有從傾斜之基板固持器440的下端Ho朝向上端Hi之方向的速度成分之方式而旋轉。藉此,不易對液體L1賦予向下之速度成分,液體L1以覆蓋接點構件494-4之方式容易積存於液體保持部494L。圖示之例為基板固持器440之圖中右側的半圓係基板固持器440具有從下端Ho朝向上端Hi之速度成分,碰撞位置P1配置於該半圓。The position where the discharged liquid L1 collides with the substrate holder 440 is set as the collision position P1. The first rotation of the substrate holder 440 is preferably performed in such a manner that the substrate holder 440 has a velocity component in the direction from the lower end Ho toward the upper end Hi of the inclined substrate holder 440 at the collision position P1. This makes it difficult to impart a downward velocity component to the liquid L1, and the liquid L1 is easily accumulated in the liquid holding portion 494L so as to cover the contact member 494-4. The illustrated example is a semicircular substrate holder 440 on the right side of the figure. The semicircular substrate holder 440 has a velocity component from the lower end Ho to the upper end Hi, and the collision position P1 is arranged in this semicircle.
此外,液體L1在碰撞位置P1宜以具有與基板固持器440之旋轉方向相同方向的速度成分之方式而吐出。藉此,液體L1容易向液體保持部494L移動,液體L1以覆蓋接點構件494-4之方式更容易積存。圖示之例係液體L1以具有朝向上端Hi方向之速度成分(箭頭V10)的方式吐出,並以具有與基板固持器440在碰撞位置P1之旋轉方向相同方向的速度成分之方式而構成。In addition, it is preferable that the liquid L1 is ejected at the collision position P1 so as to have a velocity component in the same direction as the rotation direction of the substrate holder 440 . Thereby, the liquid L1 can easily move to the liquid holding part 494L, and the liquid L1 can be more easily accumulated by covering the contact member 494-4. In the illustrated example, the liquid L1 is discharged to have a velocity component (arrow V10 ) toward the upper end Hi direction, and is configured to have a velocity component in the same direction as the rotation direction of the substrate holder 440 at the collision position P1.
液體L1宜從液體供給噴嘴482之排出口482a半扇狀地擴散的方式吐出。更具體而言,液體L1從排出口482a沿著朝向上端Hi側延伸之平面擴散。因此,吐出之液體L1分布在通過排出口482a之鉛直面Vp的一側空間。藉由如此構成,可以容易積存於液體保持部494L之樣態吐出更多的液體L1。 (變化例4) The liquid L1 is preferably ejected from the discharge port 482a of the liquid supply nozzle 482 in a semi-fan shape. More specifically, the liquid L1 spreads from the discharge port 482a along a plane extending toward the upper end Hi side. Therefore, the discharged liquid L1 is distributed in the space on one side of the vertical plane Vp passing through the discharge port 482a. With such a configuration, more liquid L1 can be discharged in a manner that it is easily accumulated in the liquid holding portion 494L. (Modification 4)
上述實施形態中,鍍覆模組400亦可具備對接點構件494-4供給液體L1時抑制鍍覆槽410內之鍍覆液氣氛釋放至鍍覆模組400內的護蓋構件。護蓋構件例如可為包圍基板固持器440之圓筒狀構件。亦可將液體供給噴嘴482、護蓋構件、及用於清洗基板Wf之清洗液噴嘴中的至少2個一體地構成。In the above-mentioned embodiment, the
本發明亦可作為以下形態來記載。 [形態1]形態1提供一種鍍覆方法,係藉由具備基板固持器之鍍覆裝置進行基板的鍍覆處理,前述基板固持器包含可導通地接觸前述基板之接點構件,前述鍍覆方法包含以下步驟:使前述基板固持器傾斜;在前述基板固持器傾斜狀態下,使前述基板固持器以第一旋轉速度旋轉;以在前述接點構件上供給液體之方式,朝向以前述第一旋轉速度旋轉之前述基板固持器吐出前述液體;停止前述吐出前述液體;在停止前述吐出前述液體之前或以後的指定時間內,開始將前述基板固持器向水平位置減少傾斜;在前述基板固持器在前述水平位置之狀態下,使前述基板固持器以比前述第一旋轉速度快之第二旋轉速度旋轉;停止前述基板固持器的前述第二旋轉速度的旋轉;在停止了前述旋轉之前述基板固持器安裝前述基板;及對安裝後之前述基板進行前述鍍覆處理。採用形態1時,不需要繁雜之作業,可更確實地減少鍍覆處理時之饋電偏差,而使形成於基板之鍍覆厚度的均勻性提高。 The present invention can also be described as the following forms. [Form 1] Form 1 provides a plating method in which a substrate is plated by a plating device provided with a substrate holder, the substrate holder including a contact member conductively contacting the substrate, the plating method The method includes the following steps: tilting the substrate holder; rotating the substrate holder at a first rotation speed while the substrate holder is tilted; and rotating the substrate toward the first rotation in a manner of supplying liquid on the contact member. Before the speed rotation, the substrate holder spits out the liquid; stops spitting out the liquid; before stopping the spitting out the liquid or within a specified time after, start tilting the substrate holder less toward the horizontal position; while the substrate holder is in the In a horizontal position, the substrate holder is rotated at a second rotational speed faster than the first rotational speed; the rotation of the substrate holder at the second rotational speed is stopped; and the substrate holder is stopped before the rotation. Install the aforementioned substrate; and perform the aforementioned plating treatment on the aforementioned substrate after installation. When adopting the form 1, complicated operations are not required, the feed deviation during the plating process can be more reliably reduced, and the uniformity of the plating thickness formed on the substrate can be improved.
[形態2]形態2如形態1,其中前述指定時間係2秒以下。採用形態2時,可抑制液體從接點構件附近之液體保持部落下,並可抑制液體從基板固持器440溢出,導致鍍覆液稀薄。[Form 2] Form 2 is the same as form 1, in which the aforementioned specified time is less than 2 seconds. When the form 2 is adopted, the liquid can be suppressed from falling from the liquid holding portion near the contact member, and the liquid can be suppressed from overflowing from the substrate holder 440 and causing the plating liquid to become thin.
[形態3]形態3如形態1或形態2,其中前述第二旋轉速度係30rpm以上。採用形態3時,可以液體L1更均勻地覆蓋接點構件,進一步減少鍍覆處理時之饋電偏差。[Form 3] Form 3 is the same as form 1 or form 2, wherein the second rotation speed is 30 rpm or more. When using Form 3, the liquid L1 can cover the contact components more evenly, further reducing the feed deviation during the plating process.
[形態4]形態4如形態1至形態3中任何一種形態,其中第一旋轉速度係8rpm以上,15rpm以下。採用形態4時,可抑制液體從接點構件附近之液體保持部落下,並可抑制液體從基板固持器飛散,導致鍍覆液稀薄。[Form 4] Form 4 is any one of forms 1 to 3, wherein the first rotation speed is 8 rpm or more and 15 rpm or less. When the form 4 is adopted, it is possible to prevent the liquid from falling from the liquid holding area near the contact member and to prevent the liquid from scattering from the substrate holder, causing the plating liquid to become thin.
[形態5]形態5如形態1至形態4中任何一種形態,其中在形成前述基板固持器在前述水平位置之狀態後,使前述基板固持器以前述第二旋轉速度旋轉之前,進一步包含在前述基板固持器中,使與前述接點構件相對之構件從前述接點構件離開的方式而移動的步驟。採用形態5時,可抑制因為液體與其他構件接觸造成偏一邊分布,接觸構件覆蓋不均而產生饋電偏差。[Mode 5] Mode 5 is any one of modes 1 to 4, wherein after the substrate holder is in the horizontal position and before the substrate holder is rotated at the second rotation speed, it further includes: In the substrate holder, a step of moving a member facing the contact member away from the contact member. When using form 5, it is possible to suppress feed deviation caused by uneven distribution of liquid due to contact with other components and uneven coverage of contact components.
[形態6]形態6如形態1至形態5中任何一種形態,其中在進行前述吐出前述液體之前述步驟,係前述液體在前述基板已配置於前述基板固持器時,朝向按壓前述基板之板而吐出。採用形態6時,可抑制因為液體附著造成安裝於基板固持器之金屬構件生鏽。[Form 6] Form 6 is any one of forms 1 to 5, wherein before performing the step of discharging the liquid, the liquid is discharged toward the plate that presses the substrate when the substrate is placed in the substrate holder. spit out. When using form 6, it is possible to suppress rusting of the metal components mounted on the substrate holder due to liquid adhesion.
[形態7]形態7如形態1至形態6中任何一種形態,其中進行前述吐出前述液體之前述步驟,係使前述基板固持器在吐出之前述液體碰撞的前述基板固持器之碰撞位置,以具有從傾斜之前述基板固持器的下端朝向上端方向之速度成分的方式而旋轉。採用形態7時,不易對與基板固持器碰撞之液體賦予向下的速度成分,且液體以覆蓋接點構件之方式容易積存。[Mode 7] Mode 7 is any one of modes 1 to 6, wherein the step before discharging the liquid is performed by placing the substrate holder at a collision position of the substrate holder where the liquid collides before discharging, so as to have The substrate holder is rotated in such a manner that the speed component is tilted from the lower end toward the upper end direction. When the form 7 is adopted, it is difficult to impart a downward velocity component to the liquid that collides with the substrate holder, and the liquid is easily accumulated so as to cover the contact member.
[形態8]形態8如形態7,其中進行前述吐出前述液體之前述步驟,係前述液體在前述碰撞位置,以具有與前述基板固持器之旋轉方向相同方向的速度成分之方式而吐出。採用形態8時,與基板固持器碰撞之液體容易向接點構件移動,液體以覆蓋接點構件之方式更容易積存。[Aspect 8] Aspect 8 is the same as aspect 7, in which, before performing the step of discharging the liquid, the liquid is discharged at the collision position in such a manner that the liquid has a velocity component in the same direction as the rotation direction of the substrate holder. When the form 8 is adopted, the liquid that collides with the substrate holder is likely to move toward the contact member, and the liquid is more likely to accumulate by covering the contact member.
[形態9]形態9如形態8,其中進行前述吐出前述液體之前述步驟,係前述液體從排出口沿著朝向前述基板固持器之上端側而延伸的平面吐出。採用形態9時,可以容易積存於接點構件附近之液體保持部的樣態吐出更多液體。[Aspect 9] Aspect 9 is the same as aspect 8, wherein before the step of discharging the liquid is performed, the liquid is discharged from the discharge port along a plane extending toward the upper end side of the substrate holder. When the form 9 is adopted, more liquid can be discharged in a manner that it is easy to accumulate in the liquid holding portion near the contact member.
[形態10]形態10如形態1至形態9中任何一種形態,其中前述液體之電導度在指定值以下,或是進行了脫氣處理。採用形態10時,可抑制因分路電流或局部電池效應而發生饋電偏差。[Form 10] Form 10 is any one of forms 1 to 9, wherein the conductivity of the aforementioned liquid is below a specified value or has been degassed. When using mode 10, feed deviation due to shunt current or local cell effects can be suppressed.
[形態11]形態11提供一種鍍覆裝置,係具備:基板固持器,其係包含可導通地接觸基板之接點構件;及控制裝置;前述控制裝置係以使前述基板固持器傾斜,在前述基板固持器傾斜狀態下,使前述基板固持器以第一旋轉速度旋轉,以在前述接點構件上供給液體之方式,朝向以前述第一旋轉速度旋轉之前述基板固持器吐出前述液體,停止前述吐出前述液體,在停止前述吐出前述液體之前或以後的指定時間內,開始將前述基板固持器向水平位置減少傾斜,在前述基板固持器在前述水平位置之狀態下,使前述基板固持器以比前述第一旋轉速度快之第二旋轉速度旋轉,停止前述基板固持器的前述第二旋轉速度的旋轉,在停止了前述旋轉之前述基板固持器安裝前述基板,對安裝後之前述基板進行前述鍍覆處理的方式而構成。採用形態11時,不需要繁雜之作業,可更確實地減少鍍覆處理時之饋電偏差,而使形成於基板之鍍覆厚度的均勻性提高。[Mode 11] Aspect 11 provides a plating device, which is provided with: a substrate holder including a contact member that can conductively contact the substrate; and a control device; the control device is configured to tilt the substrate holder, and in the above In the tilted state of the substrate holder, the substrate holder is rotated at a first rotation speed to supply the liquid on the contact member, and the liquid is discharged toward the substrate holder rotating at the first rotation speed, and the above process is stopped. The liquid is discharged, and before or within a specified time after stopping the discharge of the liquid, the substrate holder is tilted downward toward the horizontal position, and while the substrate holder is in the horizontal position, the substrate holder is tilted at a ratio of The first rotation speed is faster than the second rotation speed, the rotation of the substrate holder at the second rotation speed is stopped, the substrate holder is installed with the substrate before the rotation is stopped, and the substrate is plated after installation. It is composed of overlay processing method. When adopting the form 11, complicated operations are not required, the feed deviation during the plating process can be more reliably reduced, and the uniformity of the plating thickness formed on the substrate can be improved.
以上,說明了本發明之實施形態,不過上述發明之實施形態係為了容易理解本發明者,而並非限定本發明者。本發明在不脫離其旨趣下可變更及改良,並且本發明中當然包含其等效物。此外,在可解決上述問題之至少一部分的範圍,或是可達成效果之至少一部分的範圍內,實施形態及變化例可任意組合,且申請專利範圍及說明書所記載之各構成元件可任意組合或省略。The embodiments of the present invention have been described above. However, the above-described embodiments of the present invention are provided for easy understanding of the present invention and do not limit the present invention. The present invention can be changed and improved without departing from the spirit thereof, and the equivalents thereof are naturally included in the present invention. In addition, the embodiments and modifications may be arbitrarily combined within the scope that can solve at least part of the above problems or achieve at least part of the effects, and the constituent elements described in the patent application and the specification may be arbitrarily combined or Omit.
100:裝載埠 110:搬送機器人 120:對準器 200:預濕模組 300:預浸模組 400:鍍覆模組 405:溢流槽 410:鍍覆槽 420:隔膜 422:陰極區域 424:陽極區域 430:陽極 440:基板固持器 442:第一升降機構 443:第二升降機構 446:旋轉機構 447:傾斜機構 450:抵抗體 470:液體供給裝置 474:機械手臂 476:驅動裝置 478:托盤構件 482,4820:液體供給噴嘴 482a:排出口 490:支撐部 491:旋轉軸桿 492:背板總成 492-1:背板 492-2:浮動板 492-3:按壓機構 493:第一上部構件 494:支撐機構 494L:液體保持部 494-1:支撐構件 494-1a:凸緣 494-2:密封構件 494-3:基座 494-4:接點構件 494-4a:基板接點 494-4b:本體部 494-5:導電構件 496:第二上部構件 500:清洗模組 600:自旋沖洗乾燥機 700:搬送裝置 800:控制模組 801:CPU(中央處理單元) 802:記憶體 1000:鍍覆裝置 A10,A20,A40,V10:箭頭 Hi:上端 L1:液體 Lo:下端 P1:碰撞位置 Vp:鉛直面 Wf:基板 Wf-a:被鍍覆面 100:Loading port 110:Transport robot 120:Aligner 200: Pre-wet module 300:Prepreg module 400: Plating module 405: Overflow tank 410:Plating tank 420: Diaphragm 422:Cathode area 424: Anode area 430:Anode 440:Substrate holder 442:The first lifting mechanism 443: Second lifting mechanism 446: Rotating mechanism 447:Tilt mechanism 450: Resistance body 470:Liquid supply device 474:Robotic arm 476:Driving device 478:Pallet components 482,4820: Liquid supply nozzle 482a: Discharge outlet 490:Support part 491:Rotating shaft 492:Back plate assembly 492-1:Back plate 492-2: Floating board 492-3: Pressing mechanism 493:First upper member 494:Support mechanism 494L: Liquid holding part 494-1:Supporting members 494-1a: Flange 494-2:Sealing components 494-3: Base 494-4: Contact components 494-4a:Substrate contact 494-4b: Ontology part 494-5: Conductive components 496:Second upper member 500:Cleaning module 600: Spin rinse dryer 700:Conveying device 800:Control module 801:CPU (Central Processing Unit) 802:Memory 1000:Plating device A10,A20,A40,V10: arrow Hi: upper end L1: liquid Lo:lower end P1: collision position Vp: vertical surface Wf: substrate Wf-a: plated surface
圖1係顯示本實施形態之鍍覆裝置的整體構成之立體圖。 圖2係顯示本實施形態之鍍覆裝置的整體構成之俯視圖。 圖3係示意性地顯示本實施形態之鍍覆模組的構成之縱剖面圖。 圖4係示意性地顯示本實施形態之基板固持器的剖面圖。 圖5係示意性地顯示本實施形態之接點構件的基板固持器之剖面圖。 圖6係顯示本實施形態之控制模組的構成之概念圖。 圖7係顯示本實施形態之鍍覆方法的流程之流程圖。 圖8係顯示對本實施形態中之接點構件供給液體的處理流程之流程圖。 圖9係示意性地顯示使基板固持器傾斜之步驟的剖面圖。 圖10係示意性地顯示使基板固持器以第一旋轉速度旋轉之步驟的剖面圖。 圖11係示意性地顯示朝向基板固持器吐出液體之步驟的剖面圖。 圖12係示意性地顯示使基板固持器之傾斜減少,而基板固持器在水平位置之狀態的剖面圖。 圖13係示意性地顯示供給至接點構件之液體的剖面圖。 圖14係示意性地顯示使基板固持器以第一旋轉速度旋轉之步驟的剖面圖。 圖15係示意性地顯示供給至接點構件之液體的剖面圖。 圖16係示意性地顯示對變化例1中之基板固持器吐出液體的剖面圖。 圖17係示意性地顯示對變化例2中之基板固持器吐出液體的剖面圖。 圖18係示意性地顯示對變化例3中之基板固持器吐出液體的俯視圖。 圖19係示意性地顯示對變化例3中之基板固持器吐出液體的側視圖。 FIG. 1 is a perspective view showing the overall structure of the plating apparatus according to this embodiment. FIG. 2 is a plan view showing the overall structure of the plating apparatus according to this embodiment. FIG. 3 is a longitudinal sectional view schematically showing the structure of the plating module according to this embodiment. FIG. 4 is a cross-sectional view schematically showing the substrate holder of this embodiment. FIG. 5 is a cross-sectional view schematically showing the substrate holder of the contact member of this embodiment. FIG. 6 is a conceptual diagram showing the structure of the control module of this embodiment. FIG. 7 is a flow chart showing the flow of the plating method according to this embodiment. FIG. 8 is a flowchart showing a process flow for supplying liquid to the contact member in this embodiment. FIG. 9 is a cross-sectional view schematically showing the step of tilting the substrate holder. FIG. 10 is a cross-sectional view schematically showing a step of rotating the substrate holder at a first rotation speed. FIG. 11 is a cross-sectional view schematically showing a step of discharging liquid toward the substrate holder. FIG. 12 is a cross-sectional view schematically showing a state in which the inclination of the substrate holder is reduced and the substrate holder is in a horizontal position. FIG. 13 is a cross-sectional view schematically showing liquid supplied to the contact member. FIG. 14 is a cross-sectional view schematically showing a step of rotating the substrate holder at a first rotation speed. FIG. 15 is a cross-sectional view schematically showing liquid supplied to the contact member. FIG. 16 is a cross-sectional view schematically showing liquid discharged from the substrate holder in Modification 1. FIG. FIG. 17 is a cross-sectional view schematically showing liquid discharged from the substrate holder in Modification 2. FIG. 18 is a top view schematically showing liquid discharged from the substrate holder in Modification 3. FIG. FIG. 19 is a side view schematically showing liquid discharged from the substrate holder in Modification 3. FIG.
440:基板固持器 440:Substrate holder
442:第一升降機構 442:The first lifting mechanism
443:第二升降機構 443: Second lifting mechanism
446:旋轉機構 446: Rotating mechanism
447:傾斜機構 447:Tilt mechanism
491:旋轉軸桿 491:Rotating shaft
492:背板總成 492:Back plate assembly
492-1:背板 492-1:Back plate
492-2:浮動板 492-2: Floating board
492-3:按壓機構 492-3:Pressing mechanism
494-4:接點構件 494-4: Contact components
A40:箭頭 A40:Arrow
L1:液體 L1: liquid
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