TW202406299A - 聲響多層膜、高頻濾波器裝置及體彈性波濾波器裝置 - Google Patents

聲響多層膜、高頻濾波器裝置及體彈性波濾波器裝置 Download PDF

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Publication number
TW202406299A
TW202406299A TW112111958A TW112111958A TW202406299A TW 202406299 A TW202406299 A TW 202406299A TW 112111958 A TW112111958 A TW 112111958A TW 112111958 A TW112111958 A TW 112111958A TW 202406299 A TW202406299 A TW 202406299A
Authority
TW
Taiwan
Prior art keywords
layer
multilayer film
acoustic
acoustic multilayer
thickness
Prior art date
Application number
TW112111958A
Other languages
English (en)
Chinese (zh)
Inventor
青木優津希
中村大輔
圓岡岳
黒瀬愛美
待永広宣
Original Assignee
日商日東電工股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商日東電工股份有限公司 filed Critical 日商日東電工股份有限公司
Publication of TW202406299A publication Critical patent/TW202406299A/zh

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/02133—Means for compensation or elimination of undesirable effects of stress
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02157—Dimensional parameters, e.g. ratio between two dimension parameters, length, width or thickness
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/175—Acoustic mirrors

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
TW112111958A 2022-03-31 2023-03-29 聲響多層膜、高頻濾波器裝置及體彈性波濾波器裝置 TW202406299A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022058814 2022-03-31
JP2022-058814 2022-03-31

Publications (1)

Publication Number Publication Date
TW202406299A true TW202406299A (zh) 2024-02-01

Family

ID=88202021

Family Applications (1)

Application Number Title Priority Date Filing Date
TW112111958A TW202406299A (zh) 2022-03-31 2023-03-29 聲響多層膜、高頻濾波器裝置及體彈性波濾波器裝置

Country Status (4)

Country Link
US (1) US20250219611A1 (https=)
JP (1) JPWO2023190677A1 (https=)
TW (1) TW202406299A (https=)
WO (1) WO2023190677A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118249774A (zh) * 2024-05-21 2024-06-25 河源市艾佛光通科技有限公司 一种体声波谐振器及其制备方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025205107A1 (ja) * 2024-03-28 2025-10-02 日東電工株式会社 圧電デバイス及び電子機器

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005197983A (ja) * 2004-01-07 2005-07-21 Tdk Corp 薄膜バルク波共振器
JP4693407B2 (ja) * 2004-12-28 2011-06-01 京セラキンセキ株式会社 圧電薄膜デバイス及びその製造方法
JP4846477B2 (ja) * 2006-07-26 2011-12-28 パナソニック株式会社 薄膜音響共振器の製造方法
JP2008187303A (ja) * 2007-01-26 2008-08-14 Matsushita Electric Works Ltd 共振装置の製造方法
US8586195B2 (en) * 2007-07-11 2013-11-19 Avago Technologies General Ip (Singapore) Pte. Ltd. Method for forming an acoustic mirror with reduced metal layer roughness and related structure
US7869187B2 (en) * 2007-09-04 2011-01-11 Paratek Microwave, Inc. Acoustic bandgap structures adapted to suppress parasitic resonances in tunable ferroelectric capacitors and method of operation and fabrication therefore

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118249774A (zh) * 2024-05-21 2024-06-25 河源市艾佛光通科技有限公司 一种体声波谐振器及其制备方法

Also Published As

Publication number Publication date
WO2023190677A1 (ja) 2023-10-05
JPWO2023190677A1 (https=) 2023-10-05
US20250219611A1 (en) 2025-07-03

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