TW202349739A - Light emitting device substrate and method of fabricating the same - Google Patents
Light emitting device substrate and method of fabricating the same Download PDFInfo
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Abstract
Description
本發明是有關於一種元件基板及其製造方法,且特別是有關於一種發光元件基板及其製造方法。The present invention relates to an element substrate and a manufacturing method thereof, and in particular, to a light-emitting element substrate and a manufacturing method thereof.
微型發光元件顯示器除了低耗能及材料使用壽命長的優勢外,還具有優異的光學表現,例如高色彩飽和度、應答速度快及高對比。為了取得較低的生產成本與較大的產品設計裕度,微型發光元件顯示器的製造技術係採用晶粒轉移的方式。例如:將在暫存基板上預先製作好的微型發光元件晶粒直接轉移到驅動電路背板上的巨量轉移(Mass transfer)技術。In addition to the advantages of low energy consumption and long material life, micro-light-emitting element displays also have excellent optical performance, such as high color saturation, fast response speed and high contrast. In order to achieve lower production costs and larger product design margins, the manufacturing technology of micro-light-emitting element displays uses die transfer. For example: Mass transfer technology that directly transfers micro-light-emitting element dies pre-made on the temporary storage substrate to the drive circuit backplane.
一種利用黏著層來提取晶粒並搭配雷射剝離技術的方案被提出。其中,用來黏取微型發光元件晶粒的黏著層在經過雷射光的照射後,其黏性會失效,使晶粒得以脫離黏著層。然而,在晶粒脫離黏著層後,其出光面(即提取面)上仍會殘留部分的黏著材料,導致後續微型發光元件的出光效率、光型分布、甚至是出光波長改變而影響原有的光學表現。A solution using an adhesive layer to extract crystal grains and combining it with laser lift-off technology was proposed. Among them, the adhesive layer used to adhere micro-light-emitting element chips will lose its viscosity after being irradiated by laser light, allowing the chips to separate from the adhesive layer. However, after the die is separated from the adhesive layer, part of the adhesive material will still remain on its light-emitting surface (i.e., the extraction surface), causing the light-emitting efficiency, light-type distribution, and even light-emitting wavelength of subsequent micro-light-emitting devices to change, affecting the original Optical performance.
本發明提供一種發光元件基板,其發光元件的出光性能較穩定。The present invention provides a light-emitting element substrate, the light-emitting element of which has relatively stable light extraction performance.
本發明提供一種發光元件基板的製造方法,能讓發光元件在經過轉移製程後,仍能維持其原本的出光特性。The present invention provides a method for manufacturing a light-emitting element substrate, which allows the light-emitting element to maintain its original light-emitting characteristics after undergoing a transfer process.
本發明的發光元件基板,包括基板以及設置在基板上的多個發光元件。發光元件具有背離基板的出光面。至少部分的發光元件各自的出光面的至少一邊緣設有至少一黏著圖案。The light-emitting element substrate of the present invention includes a substrate and a plurality of light-emitting elements arranged on the substrate. The light-emitting element has a light-emitting surface facing away from the substrate. At least one edge of the light-emitting surface of at least part of the light-emitting elements is provided with at least one adhesive pattern.
本發明的發光元件基板的製造方法,包括提供暫時基板以及設置在暫時基板上的多個發光元件、利用載板結構提取暫時基板上的這些發光元件以及進行一雷射剝離製程,使這些發光元件從載板結構脫離並轉移至目標基板上。載板結構包括載板、多個凸塊及黏著層。這些凸塊分散地設置在載板上,且各自具有用於承接任一發光元件的承接面。承接面的面積小於發光元件的出光面的面積。黏著層填充於這些凸塊之間,並且覆蓋各個凸塊的承接面的至少一部分。這些發光元件的提取步驟包括對重疊於這些凸塊的這些發光元件施加壓力,以將黏著層重疊於各個凸塊的部分自承接面的區域排出,並且使各個發光元件的出光面接觸對應的一個凸塊的承接面以及部分黏著層。這些發光元件在脫離載板結構的過程中,黏著層重疊於至少部分的發光元件各自的出光面的部分形成連接在出光面的至少一邊緣的至少一黏著圖案。The manufacturing method of a light-emitting element substrate of the present invention includes providing a temporary substrate and a plurality of light-emitting elements arranged on the temporary substrate, using a carrier structure to extract these light-emitting elements on the temporary substrate, and performing a laser lift-off process to make these light-emitting elements Detached from the carrier structure and transferred to the target substrate. The carrier board structure includes a carrier board, a plurality of bumps and an adhesive layer. These bumps are dispersedly arranged on the carrier board, and each has a receiving surface for receiving any light-emitting element. The area of the receiving surface is smaller than the area of the light-emitting surface of the light-emitting element. The adhesive layer is filled between the bumps and covers at least part of the receiving surface of each bump. The step of extracting the light-emitting elements includes applying pressure to the light-emitting elements overlapping the bumps, so that the portion of the adhesive layer overlapping the bumps is discharged from the area of the receiving surface, and the light-emitting surface of each light-emitting element contacts the corresponding one. The receiving surface of the bump and part of the adhesive layer. When these light-emitting elements are separated from the carrier structure, the portion of the adhesive layer that overlaps at least part of the light-emitting surface of each of the light-emitting elements forms at least one adhesive pattern connected to at least one edge of the light-emitting surface.
基於上述,在本發明的一實施例的發光元件基板的製造方法中,用來提取發光元件的載板結構上設有多個凸塊,且這些凸塊之間填充有黏著層。這些凸塊的設置能讓黏著層在下壓黏取發光元件的過程中自凸塊的承接面與發光元件的出光面間排開,並且藉由承接面的面積小於發光元件的出光面的面積,使黏著層與發光元件的黏著關係大致上侷限在凸塊的周圍附近。在發光元件被轉移至目標基板並脫離載板結構後,其出光面上的黏著層的殘留程度可明顯降低,並且大致上分布在出光面的邊緣附近。據此,可避免殘留的黏著材料影響發光元件的出光效率和出光波長,有助於確保發光元件的光學表現。Based on the above, in the manufacturing method of a light-emitting element substrate according to an embodiment of the present invention, a plurality of bumps are provided on the carrier structure used to extract the light-emitting elements, and an adhesive layer is filled between the bumps. The arrangement of these bumps allows the adhesive layer to be separated from the receiving surface of the bumps and the light-emitting surface of the light-emitting element during the process of pressing down and adhering to the light-emitting element, and because the area of the receiving surface is smaller than the area of the light-emitting surface of the light-emitting element, The adhesive relationship between the adhesive layer and the light-emitting element is generally limited to the vicinity of the bumps. After the light-emitting element is transferred to the target substrate and separated from the carrier structure, the residual degree of the adhesive layer on the light-emitting surface can be significantly reduced, and is generally distributed near the edge of the light-emitting surface. Accordingly, the residual adhesive material can be prevented from affecting the light extraction efficiency and light emission wavelength of the light-emitting element, which helps ensure the optical performance of the light-emitting element.
本文使用的「約」、「近似」、「本質上」、或「實質上」包括所述值和在本領域普通技術人員確定的特定值的可接受的偏差範圍內的平均值,考慮到所討論的測量和與測量相關的誤差的特定數量(即,測量系統的限制)。例如,「約」可以表示在所述值的一個或多個標準偏差內,或例如±30%、±20%、±15%、±10%、±5%內。再者,本文使用的「約」、「近似」、「本質上」、或「實質上」可依量測性質、切割性質或其它性質,來選擇較可接受的偏差範圍或標準偏差,而可不用一個標準偏差適用全部性質。As used herein, "about," "approximately," "substantially," or "substantially" includes the stated value and an average within an acceptable range of deviations from a particular value as determined by one of ordinary skill in the art, taking into account that Discuss the measurement and the specific amount of error associated with the measurement (i.e., the limitations of the measurement system). For example, "about" can mean within one or more standard deviations of the stated value, or within ±30%, ±20%, ±15%, ±10%, ±5%, for example. Furthermore, the terms "approximately", "approximately", "substantially" or "substantially" used in this article can be used to select a more acceptable deviation range or standard deviation based on the measurement properties, cutting properties or other properties, and can Not one standard deviation applies to all properties.
在附圖中,為了清楚起見,放大了層、膜、面板、區域等的厚度。應當理解,當諸如層、膜、區域或基板的元件被稱為在另一元件「上」或「連接到」另一元件時,其可以直接在另一元件上或與另一元件連接,或者中間元件可以也存在。相反,當元件被稱為「直接在另一元件上」或「直接連接到」另一元件時,不存在中間元件。如本文所使用的,「連接」可以指物理及/或電性連接。再者,「電性連接」可為二元件間存在其它元件。In the drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity. It will be understood that when an element such as a layer, film, region or substrate is referred to as being "on" or "connected to" another element, it can be directly on or connected to the other element, or Intermediate elements may also be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intervening elements present. As used herein, "connected" may refer to physical and/or electrical connections. Furthermore, "electrical connection" can be the presence of other components between the two components.
此外,諸如「下」或「底部」和「上」或「頂部」的相對術語可在本文中用於描述一個元件與另一元件的關係,如圖所示。應當理解,相對術語旨在包括除了圖中所示的方位之外的裝置的不同方位。例如,如果一個附圖中的裝置翻轉,則被描述為在其它元件的「下」側的元件將被定向在其它元件的「上」側。因此,示例性術語「下」可以包括「下」和「上」的取向,取決於附圖的特定取向。類似地,如果一個附圖中的裝置翻轉,則被描述為在其它元件「下方」或「下方」的元件將被定向為在其它元件「上方」。因此,示例性術語「上面」或「下面」可以包括上方和下方的取向。Additionally, relative terms, such as "lower" or "bottom" and "upper" or "top," may be used herein to describe one element's relationship to another element as illustrated in the Figures. It will be understood that relative terms are intended to encompass different orientations of the device in addition to the orientation illustrated in the figures. For example, if the device in one of the figures is turned over, elements described as "lower" than other elements would then be oriented "above" the other elements. Thus, the exemplary term "lower" may include both "lower" and "upper" orientations, depending on the particular orientation of the drawing. Similarly, if the device in one of the figures is turned over, elements described as "below" or "beneath" other elements would then be oriented "above" the other elements. Thus, the exemplary terms "upper" or "lower" may include both upper and lower orientations.
本文參考作為理想化實施例的示意圖的截面圖來描述示例性實施例。因此,可以預期到作為例如製造技術及/或(and/or)公差的結果的圖示的形狀變化。因此,本文所述的實施例不應被解釋為限於如本文所示的區域的特定形狀,而是包括例如由製造導致的形狀偏差。例如,示出或描述為平坦的區域通常可以具有粗糙及/或非線性特徵。此外,所示的銳角可以是圓的。因此,圖中所示的區域本質上是示意性的,並且它們的形狀不是旨在示出區域的精確形狀,並且不是旨在限制權利要求的範圍。Example embodiments are described herein with reference to cross-sectional illustrations that are schematic illustrations of idealized embodiments. Accordingly, variations in the shapes illustrated in the illustrations are to be expected as a result of, for example, manufacturing techniques and/or tolerances. Thus, embodiments described herein should not be construed as limited to the particular shapes of regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. For example, regions shown or described as flat may typically have rough and/or non-linear characteristics. Additionally, the acute angles shown may be rounded. Accordingly, the regions shown in the figures are schematic in nature and their shapes are not intended to show the precise shapes of the regions and are not intended to limit the scope of the claims.
現將詳細地參考本發明的示範性實施方式,示範性實施方式的實例說明於所附圖式中。只要有可能,相同元件符號在圖式和描述中用來表示相同或相似部分。Reference will now be made in detail to the exemplary embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Whenever possible, the same reference numbers are used in the drawings and descriptions to refer to the same or similar parts.
圖1是本發明的第一實施例的發光元件基板的俯視示意圖。圖2是圖1的發光元件基板的側視示意圖。圖3A至圖3E是圖1的發光元件基板的製造流程的剖視示意圖。圖4是圖3C的載板結構與多個發光元件的下視示意圖。FIG. 1 is a schematic top view of a light-emitting element substrate according to the first embodiment of the present invention. FIG. 2 is a schematic side view of the light emitting element substrate of FIG. 1 . 3A to 3E are schematic cross-sectional views of the manufacturing process of the light-emitting element substrate of FIG. 1 . FIG. 4 is a schematic bottom view of the carrier structure and multiple light-emitting elements of FIG. 3C.
請參照圖1及圖2,發光元件基板10包括基板SUB及多個發光元件100。舉例來說,這些發光元件100可分別沿著方向X和方向Y排成多列與多行,即發光元件100可陣列排列於基板SUB上,但不以此為限。Referring to FIGS. 1 and 2 , the light-emitting
基板SUB例如是具有驅動元件層(未繪示)的電路板,其中驅動元件層可包含多種訊號線(例如資料線、電源線和掃描線)、多個主動元件(例如薄膜電晶體)以及多個接墊組。每一個發光元件100適於接合至對應的一個接墊組以電性連接電路板。至少一主動元件適於接收來自不同訊號線的開關信號、數據信號或驅動信號,以控制對應的發光元件100出光。也就是說,接合至基板SUB上的這些發光元件100能個別地經由對應的主動元件的控制來出光,以達到顯示影像的效果。The substrate SUB is, for example, a circuit board with a driving element layer (not shown), where the driving element layer may include a variety of signal lines (such as data lines, power lines, and scan lines), a plurality of active components (such as thin film transistors), and multiple pad set. Each light-
然而,本發明不限於此。在另一些實施例中,基板SUB也可以是設有附著層的暫時基板,以作為這些發光元件100在轉移至上述電路板前的中介基板。However, the present invention is not limited to this. In other embodiments, the substrate SUB may also be a temporary substrate provided with an adhesion layer to serve as an intermediary substrate before these light-
在本實施例中,發光元件100例如是覆晶型發光二極體(lateral-type light emitting diode),其可包含磊晶結構ES及設置在磊晶結構ES同一側的第一電極E1和第二電極E2,其中第一電極E1與第二電極E2分別電性連接磊晶結構ES的不同半導體層(例如未繪示的P型半導體層與N型半導體層)。舉例來說,可經由發光元件100的兩電極與前述接墊組的兩個接墊的接合關係來實現發光元件100與基板SUB的電性連接,但不以此為限。In this embodiment, the light-
特別注意的是,發光元件100具有背離基板SUB的出光面100es,且出光面100es的至少一邊緣設有至少一黏著圖案。舉例來說,發光元件100的出光面100es具有沿著方向Y排列的第一邊緣100e1與第二邊緣100e2以及連接第一邊緣100e1與第二邊緣100e2並且沿著方向X排列的第三邊緣100e3與第四邊緣100e4。It is particularly important to note that the light-emitting
在本實施例中,出光面100es的第一邊緣100e1與第二邊緣100e2分別設有第一黏著圖案200P1與第二黏著圖案200P2,而第三邊緣100e3和第四邊緣100e4則未設有任何的黏著圖案,其中第一黏著圖案200P1的延伸方向平行於第一邊緣100e1的延伸方向,第二黏著圖案200P2的延伸方向平行於第二邊緣100e2的延伸方向。據此,可明顯降低黏著圖案對於發光元件100的出光效率和出光波長的影響,有助於確保發光元件100在經過轉移製程後的光學表現。In this embodiment, the first edge 100e1 and the second edge 100e2 of the light-emitting surface 100es are respectively provided with the first adhesive pattern 200P1 and the second adhesive pattern 200P2, while the third edge 100e3 and the fourth edge 100e4 are not provided with any Adhesion pattern, wherein the extension direction of the first adhesion pattern 200P1 is parallel to the extension direction of the first edge 100e1, and the extension direction of the second adhesion pattern 200P2 is parallel to the extension direction of the second edge 100e2. Accordingly, the impact of the adhesion pattern on the light extraction efficiency and light emission wavelength of the light-emitting
為了更清楚地說明上述的黏著圖案如何形成在發光元件100的出光面100es的邊緣上,以下將針對發光元件基板10的製造方法進行示例性地說明。請參照圖3A,首先,提供一暫時基板80,其上設有前述的多個發光元件100,其中發光元件100的出光面100es背離暫時基板80。利用由載板CS、多個凸塊BP及黏著層200所構成的載板結構來提取暫時基板80上的這些發光元件100,其中這些凸塊BP分散地設置在載板CS上,且黏著層200填充在這些凸塊BP之間。凸塊BP的材質例如包括高分子材料、光阻、金屬、或任一具有平整度和厚度的材質。In order to explain more clearly how the above-mentioned adhesive pattern is formed on the edge of the light-emitting surface 100es of the light-emitting
在本實施例中,黏著層200可選擇性地完全覆蓋凸塊BP用於承接發光元件100的承接面BPs,但不以此為限。如圖3B所示,當載板結構碰觸到暫時基板80上的多個發光元件100時,其黏著層200會接觸發光元件100的出光面100es。為了將存在於凸塊BP與發光元件100之間的部分黏著層200自凸塊BP的承接面BPs的區域排出,對載板結構施加壓力PSR,使沿著方向D3重疊於多個發光元件100的多個凸塊BP繼續朝向這些發光元件100移動。過程中,黏著層夾設在相重疊的凸塊BP與發光元件100之間的部分會受擠壓而往凸塊BP的四周排出,並且使發光元件100的出光面100es接觸凸塊BP的承接面BPs以及部分的黏著層200,如圖3C所示。In this embodiment, the
當載板結構的凸塊BP的承接面BPs接觸到發光元件100的出光面100es後,令載板結構朝著方向D2遠離暫時基板80。過程中,載板結構可藉由黏著層200與發光元件100的出光面100es的邊緣區域的連接關係帶動發光元件100遠離暫時基板80。也就是說,載板結構並非利用黏著層200與發光元件100的出光面100es間的整面性接觸來形成提取發光元件100的黏著力。When the receiving surface BPs of the bump BP of the carrier structure contacts the light emitting surface 100es of the
為了達到上述的連接方式,凸塊BP的承接面BPs的面積小於發光元件100的出光面100es的面積。請同參照圖4,在本實施例中,凸塊BP的承接面BPs沿著方向D1的寬度w1a小於發光元件100的出光面100es沿著方向D1的寬度w2a。然而,凸塊BP的承接面BPs沿著方向D2的寬度w1b可大致上等於發光元件100的出光面100es沿著方向D2的寬度w2b,但不以此為限。In order to achieve the above-mentioned connection mode, the area of the receiving surface BPs of the bump BP is smaller than the area of the light-emitting surface 100es of the light-emitting
也就是說,在本實施例中,在提取發光元件100的過程中,載板結構大致上是利用黏著層200中沿著方向D3重疊於出光面100es在方向D1上排列且相遠離的第一邊緣100e1和第二邊緣100e2的兩部分來黏取發光元件100。That is to say, in this embodiment, during the process of extracting the light-emitting
請參照圖3D,接著,利用載板結構將多個發光元件100轉移至一目標基板(例如基板SUB)上。舉例來說,在本實施例中,在載板CS上的多個發光元件100與基板SUB上的多個接墊組(未繪示)的對位步驟完成後,可進行一熱接合製程,使發光元件100的第一電極E1和第二電極E2與相對應的接墊組電性接合,並固定在基板SUB上。Referring to FIG. 3D , a plurality of light-emitting
進行一雷射剝離製程,使這些發光元件100與載板結構分離。詳細地,其步驟可包括利用雷射光LB照射黏著層200,使黏著層200與發光元件100間的連接關係弱化(例如黏性失效)。亦即,黏著層200例如是高分子材料層,其可經由加熱、雷射照射、或是其他合適的製程加工手段,使得材料本身的特性改變來達到發光元件100轉移的目的。然而,在發光元件100脫離載板結構的過程中,仍會有部分的黏著層200殘留在發光元件100的出光面100es上,並形成連接在出光面100es的第一邊緣100e1和第二邊緣100e2的第一黏著圖案200P1和第二黏著圖案200P2,如圖3E所示。於此,便完成本實施例的發光元件基板10的製作。A laser lift-off process is performed to separate the light-emitting
由於載板結構的載板CS上對應多個發光元件100的位置設有多個凸塊BP,黏著層200與發光元件100的接觸面大致上可侷限在發光元件100的出光面100es的邊緣附近。因此,在發光元件100與載板結構的分離過程中,可避免其出光面100es上殘留過多的黏著材料而影響到發光元件100在後續操作時的出光效率和出光波長。換言之,可確保發光元件100在轉移製程後仍能維持其原有的光學表現。Since the carrier CS of the carrier structure is provided with a plurality of bumps BP at positions corresponding to the plurality of light-emitting
以下將列舉另一些實施例以詳細說明本揭露,其中相同的構件將標示相同的符號,並且省略相同技術內容的說明,省略部分請參考前述實施例,以下不再贅述。Other embodiments will be enumerated below to describe the present disclosure in detail, in which the same components will be marked with the same symbols, and the description of the same technical content will be omitted. Please refer to the previous embodiments for the omitted parts, which will not be described again below.
圖5是本發明的第二實施例的發光元件基板的俯視示意圖。圖6是圖5的發光元件基板的側視示意圖。圖7是圖5的發光元件基板的製造流程中載板結構提取發光元件的下視示意圖。FIG. 5 is a schematic top view of the light-emitting element substrate according to the second embodiment of the present invention. FIG. 6 is a schematic side view of the light emitting element substrate of FIG. 5 . FIG. 7 is a schematic bottom view of the light-emitting element extracted from the carrier structure in the manufacturing process of the light-emitting element substrate of FIG. 5 .
請參照圖5及圖6,本實施例的發光元件基板10A與圖1的發光元件基板10的差異在於:本實施例的黏著圖案200P-A還延伸分布在發光元件100的出光面100es的第三邊緣100e3與第四邊緣100e4。更具體地說,本實施例的黏著圖案200P-A是圍繞出光面100es設置。Please refer to FIGS. 5 and 6 . The difference between the light-emitting
為了形成上述黏著圖案200P-A的分布,在發光元件基板10A的製造過程中,用於轉移發光元件100的載板結構,其凸塊BP-A的承接面BPs除了沿著方向D1的寬度w1a小於發光元件100(或出光面100es)沿著方向D1的寬度w2a外,承接面BPs沿著方向D2的寬度w1b”也小於發光元件100沿著方向D2的寬度w2b”,如圖7所示。在本實施例中,方向D1與方向D2相交(例如相互垂直)。In order to form the distribution of the above-mentioned
因此,在發光元件100的轉移過程中,黏著層與發光元件100的接觸面大致上被侷限在發光元件100的出光面100es的四個邊緣100e1~100e4附近。在發光元件100被轉移至目標基板並脫離載板結構後,其出光面100es上的黏著層的殘留程度可明顯降低,且殘留的黏著圖案200P-A大致上分布在出光面100es的四周邊緣附近(如圖5所示)。據此,可避免殘留的黏著材料影響發光元件100的出光效率和出光波長,有助於確保發光元件100的光學表現。Therefore, during the transfer process of the light-emitting
圖8是本發明的第三實施例的發光元件基板的俯視示意圖。圖9是圖8的發光元件基板的製造流程中載板結構提取發光元件的下視示意圖。請參照圖8及圖9,本實施例的發光元件基板10B與圖5的發光元件基板10A的差異在於:本實施例的多個黏著圖案僅位在發光元件100的出光面100es的四個角落。FIG. 8 is a schematic top view of a light-emitting element substrate according to the third embodiment of the present invention. FIG. 9 is a schematic bottom view of the light-emitting element extracted from the carrier structure in the manufacturing process of the light-emitting element substrate of FIG. 8 . Please refer to Figures 8 and 9. The difference between the light-emitting
詳細地,在本實施例中,殘留在發光元件100上的黏著圖案數量為四個,分別為第一黏著圖案200P1-B、第二黏著圖案200P2-B、第三黏著圖案200P3-B及第四黏著圖案200P4-B。第一黏著圖案200P1-B位在第一邊緣100e1與第三邊緣100e3的連接處。第二黏著圖案200P2-B位在第二邊緣100e2與第三邊緣100e3的連接處。第三黏著圖案200P3-B位在第一邊緣100e1與第四邊緣100e4的連接處。第四黏著圖案200P4-B位在第二邊緣100e2與第四邊緣100e4的連接處。Specifically, in this embodiment, the number of adhesive patterns remaining on the light-emitting
為了形成上述四個黏著圖案的分布,在發光元件基板10B的製造過程中,用於轉移發光元件100的載板結構,其凸塊BP-B的承接面BPs-B的四個角落各自具有一個缺口。舉例來說,凸塊BP-B的承接面BPs-B具有沿著方向D1排列的第一邊緣BPe1與第二邊緣BPe2、沿著方向D2排列的第三邊緣BPe3與第四邊緣BPe4、鄰設在第一邊緣BPe1與第三邊緣BPe3的第一缺口BPn1、鄰設在第二邊緣BPe2與第三邊緣BPe3的第二缺口BPn2、鄰設在第一邊緣BPe1與第四邊緣BPe4的第三缺口BPn3以及鄰設在第二邊緣BPe2與第四邊緣BPe4的第四缺口BPn4(如圖9所示)。在本實施例中,方向D1與方向D2相交(例如相互垂直)。In order to form the distribution of the above four adhesion patterns, during the manufacturing process of the light-emitting
因此,在發光元件100的轉移過程中,黏著層與發光元件100的接觸面大致上被侷限在發光元件100的出光面100es的四個角落。在發光元件100被轉移至目標基板並脫離載板結構後,其出光面100es上的黏著層的殘留程度相較於圖5的實施例可進一步降低,且殘留的四個黏著圖案200P1-B~200P4-B大致上分布在出光面100es的四個角落(如圖8所示)。據此,可避免殘留的黏著材料影響發光元件100的出光效率和出光波長,有助於確保發光元件100的光學表現。Therefore, during the transfer process of the light-emitting
圖10是本發明的第四實施例的發光元件基板的製造流程中載板結構提取發光元件的下視示意圖。圖11A至圖11D是本發明的第四實施例的發光元件基板的製造流程的剖視示意圖。請參照圖10,本實施例的載板結構與前述實施例的載板結構的主要差異在於:本實施例的載板結構的黏著層200A具有對應多個凸塊BP-C設置的多個開口OP。10 is a schematic bottom view of the light-emitting element extracted from the carrier structure during the manufacturing process of the light-emitting element substrate according to the fourth embodiment of the present invention. 11A to 11D are schematic cross-sectional views of the manufacturing process of the light-emitting element substrate according to the fourth embodiment of the present invention. Please refer to Figure 10. The main difference between the carrier structure of this embodiment and the carrier structure of the previous embodiment is that the
特別注意的是,在本實施例中,開口OP沿著方向D2的寬度w3b大於凸塊BP-C沿著方向D2的寬度w1b。據此,載板結構在提取發光元件100的過程中,可增加黏著層200A受發光元件100擠壓時的溢流空間(如圖11C及圖11D所示),同時避免黏著層200A沿著方向D2或其反向溢流至發光元件100的出光面100es與凸塊BP-C的承接面BPs的交界處。因此,在發光元件100脫離載板結構後,得以將殘留在發光元件100的出光面100es的黏著材料侷限在出光面100es的邊緣區域,以避免影響發光元件100的出光效率和出光波長,有助於確保發光元件100的光學表現。It is particularly noted that in this embodiment, the width w3b of the opening OP along the direction D2 is greater than the width w1b of the bump BP-C along the direction D2. Accordingly, during the process of extracting the light-emitting
為了取得上述的載板結構,發光元件基板的製造方法還可選擇性地包括:在黏著層200的形成步驟完成後,對黏著層200進行一圖案化製程,以形成具有前述多個開口OP的黏著層200A(如圖11A及圖11B所示)。圖案化製程例如是微影蝕刻製程、微接觸式印刷(microcontact printing)、網板印刷(screen printing)、或奈米印刷(nanoimprinting),但不以此為限。In order to obtain the above-mentioned carrier structure, the manufacturing method of the light-emitting element substrate may also optionally include: after the formation step of the
圖12是本發明的第五實施例的發光元件基板的製造流程中載板結構提取發光元件的下視示意圖。請參照圖12,本實施例的載板結構與圖10的載板結構的差異在於:黏著層的開口配置不同。相較於圖10的載板結構,本實施例的載板結構,其黏著層200B的開口OP”除了沿著方向D2的寬度w3b大於凸塊BP-C沿著方向D2的寬度w1b外,開口OP”沿著方向D1的寬度w3a也大於凸塊BP-C沿著方向D1的寬度w1a。12 is a schematic bottom view of the light-emitting element extracted from the carrier structure during the manufacturing process of the light-emitting element substrate according to the fifth embodiment of the present invention. Please refer to Figure 12. The difference between the carrier structure of this embodiment and the carrier structure of Figure 10 is that the opening configuration of the adhesive layer is different. Compared with the carrier structure of Figure 10, in the carrier structure of this embodiment, in addition to the width w3b of the opening OP" of the
因此,載板結構在提取發光元件100的過程中,可增加黏著層200B受發光元件100擠壓時的溢流空間,同時避免黏著層200B溢流至發光元件100的出光面100es與凸塊BP-C的承接面BPs的交界處。因此,在發光元件100脫離載板結構後,得以將殘留在發光元件100的出光面100es的黏著材料侷限在出光面100es的邊緣區域,以避免影響發光元件100的出光效率和出光波長,有助於確保發光元件100的光學表現。Therefore, during the process of extracting the light-emitting
綜上所述,在本發明的一實施例的發光元件基板及其製造方法中,用來提取發光元件的載板結構上設有多個凸塊,且這些凸塊之間填充有黏著層。這些凸塊的設置能讓黏著層在下壓黏取發光元件的過程中自凸塊的承接面與發光元件的出光面間排開,並且藉由承接面的面積小於發光元件的出光面的面積,使黏著層與發光元件的黏著關係大致上侷限在凸塊的周圍附近。在發光元件被轉移至目標基板並脫離載板結構後,其出光面上的黏著層的殘留程度可明顯降低,並且大致上殘留在出光面的邊緣附近。據此,可避免殘留的黏著材料影響發光元件的出光效率和出光波長,有助於確保發光元件的光學表現。To sum up, in the light-emitting element substrate and the manufacturing method thereof according to an embodiment of the present invention, the carrier structure for extracting the light-emitting element is provided with a plurality of bumps, and an adhesive layer is filled between the bumps. The arrangement of these bumps allows the adhesive layer to be separated from the receiving surface of the bumps and the light-emitting surface of the light-emitting element during the process of pressing down and adhering to the light-emitting element, and because the area of the receiving surface is smaller than the area of the light-emitting surface of the light-emitting element, The adhesive relationship between the adhesive layer and the light-emitting element is generally limited to the vicinity of the bumps. After the light-emitting element is transferred to the target substrate and separated from the carrier structure, the degree of residue of the adhesive layer on the light-emitting surface can be significantly reduced, and remains substantially near the edge of the light-emitting surface. Accordingly, the residual adhesive material can be prevented from affecting the light extraction efficiency and light emission wavelength of the light-emitting element, which helps ensure the optical performance of the light-emitting element.
10、10A、10B:發光元件基板
80:暫時基板
100:發光元件
100e1、BPe1:第一邊緣
100e2、BPe2:第二邊緣
100e3、BPe3:第三邊緣
100e4、BPe4:第四邊緣
100es:出光面
200、200A、200B:黏著層
200P-A:黏著圖案
200P1、200P1-B:第一黏著圖案
200P2、200P2-B:第二黏著圖案
200P3-B:第三黏著圖案
200P4-B:第四黏著圖案
BP、BP-A、BP-B、BP-C:凸塊
BPn1、BPn2、BPn3、BPn4:缺口
BPs:承接面
CS:載板
D1、D2、D3、X、Y、Z:方向
E1:第一電極
E2:第二電極
ES:磊晶結構
LB:雷射光
OP、OP”:開口
PSR:壓力
SUB:基板
w1a、w2a、w1b、w2b、w1b”、w2b”、w3a、w3b:寬度
10, 10A, 10B: Light emitting element substrate
80: Temporary substrate
100:Light-emitting components
100e1, BPe1: first edge
100e2, BPe2: second edge
100e3, BPe3: The third edge
100e4, BPe4: The fourth edge
100es: light-emitting
圖1是本發明的第一實施例的發光元件基板的俯視示意圖。 圖2是圖1的發光元件基板的側視示意圖。 圖3A至圖3E是圖1的發光元件基板的製造流程的剖視示意圖。 圖4是圖3C的載板結構與多個發光元件的下視示意圖。 圖5是本發明的第二實施例的發光元件基板的俯視示意圖。 圖6是圖5的發光元件基板的側視示意圖。 圖7是圖5的發光元件基板的製造流程中載板結構提取發光元件的下視示意圖。 圖8是本發明的第三實施例的發光元件基板的俯視示意圖。 圖9是圖8的發光元件基板的製造流程中載板結構提取發光元件的下視示意圖。 圖10是本發明的第四實施例的發光元件基板的製造流程中載板結構提取發光元件的下視示意圖。 圖11A至圖11D是本發明的第四實施例的發光元件基板的製造流程的剖視示意圖。 圖12是本發明的第五實施例的發光元件基板的製造流程中載板結構提取發光元件的下視示意圖。 FIG. 1 is a schematic top view of a light-emitting element substrate according to the first embodiment of the present invention. FIG. 2 is a schematic side view of the light emitting element substrate of FIG. 1 . 3A to 3E are schematic cross-sectional views of the manufacturing process of the light-emitting element substrate of FIG. 1 . FIG. 4 is a schematic bottom view of the carrier structure and multiple light-emitting elements of FIG. 3C. FIG. 5 is a schematic top view of the light-emitting element substrate according to the second embodiment of the present invention. FIG. 6 is a schematic side view of the light emitting element substrate of FIG. 5 . FIG. 7 is a schematic bottom view of the light-emitting element extracted from the carrier structure in the manufacturing process of the light-emitting element substrate of FIG. 5 . FIG. 8 is a schematic top view of a light-emitting element substrate according to the third embodiment of the present invention. FIG. 9 is a schematic bottom view of the light-emitting element extracted from the carrier structure in the manufacturing process of the light-emitting element substrate of FIG. 8 . 10 is a schematic bottom view of the light-emitting element extracted from the carrier structure during the manufacturing process of the light-emitting element substrate according to the fourth embodiment of the present invention. 11A to 11D are schematic cross-sectional views of the manufacturing process of the light-emitting element substrate according to the fourth embodiment of the present invention. 12 is a schematic bottom view of the light-emitting element extracted from the carrier structure during the manufacturing process of the light-emitting element substrate according to the fifth embodiment of the present invention.
10:發光元件基板 10:Light-emitting element substrate
100:發光元件 100:Light-emitting components
100e1:第一邊緣 100e1: first edge
100e2:第二邊緣 100e2: Second edge
100es:出光面 100es: light-emitting surface
200P1:第一黏著圖案 200P1: First adhesive pattern
200P2:第二黏著圖案 200P2: Second adhesive pattern
E1:第一電極 E1: first electrode
E2:第二電極 E2: second electrode
ES:磊晶結構 ES: epitaxial structure
SUB:基板 SUB:Substrate
X、Y、Z:方向 X, Y, Z: direction
Claims (12)
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