TW202347187A - Information processing device, inference device, machine learning device, information processing method, inference method, and machine learning method - Google Patents

Information processing device, inference device, machine learning device, information processing method, inference method, and machine learning method Download PDF

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TW202347187A
TW202347187A TW112103206A TW112103206A TW202347187A TW 202347187 A TW202347187 A TW 202347187A TW 112103206 A TW112103206 A TW 112103206A TW 112103206 A TW112103206 A TW 112103206A TW 202347187 A TW202347187 A TW 202347187A
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substrate processing
fluid supply
processing fluid
information
substrate
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宮﨑充
近藤大地
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日商荏原製作所股份有限公司
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • General Factory Administration (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

An information processing device (5) comprises: an information acquisition unit (500) that acquires substrate processing fluid supply information including substrate processing fluid supply state information which indicates the state of supply of a substrate processing fluid that is supplied from a substrate processing fluid supply unit (222, 242a, 245a), in processing of a substrate (W) which is performed by a substrate processing device (2); and a state prediction unit (501) that predicts substrate processing fluid supply position information corresponding to the substrate processing fluid supply information by inputting the substrate processing fluid supply information to a learning model which has learned, by machine learning, correlations between substrate processing fluid supply information and substrate processing fluid supply position information, said substrate processing fluid supply position information indicating the supply position of the fluid that is supplied by the substrate processing fluid supply unit when the substrate processing device operates.

Description

資訊處理裝置、推論裝置、機械學習裝置、資訊處理方法、推論方法、及機械學習方法Information processing device, inference device, machine learning device, information processing method, inference method, and machine learning method

本發明係關於一種資訊處理裝置、推論裝置、機械學習裝置、資訊處理方法、推論方法、及機械學習方法。The present invention relates to an information processing device, an inference device, a machine learning device, an information processing method, an inference method, and a machine learning method.

對半導體晶圓等之基板進行各種處理的一種基板處理裝置,習知有進行化學機械研磨(CMP:Chemical Mechanical Polishing)處理之基板處理裝置。基板處理裝置例如係在使具有研磨墊之研磨台旋轉,並從液體供給噴嘴在研磨墊上供給研磨液(漿液)之狀態下,藉由稱為頂環之研磨頭將基板按壓於研磨墊,來化學性且機械性研磨基板。而後,為了除去附著於研磨後之基板的研磨屑等異物,係藉由在研磨後之基板上供給基板清洗流體並使其接觸清洗工具進行摩擦清洗,進一步乾燥基板,一連串之處理結束後,轉移至下一個基板之處理。A substrate processing apparatus that performs various processes on substrates such as semiconductor wafers, and a substrate processing apparatus that performs chemical mechanical polishing (CMP: Chemical Mechanical Polishing) processing is known. For example, the substrate processing apparatus rotates a polishing table with a polishing pad and supplies polishing liquid (slurry) on the polishing pad from a liquid supply nozzle, and presses the substrate against the polishing pad with a polishing head called a top ring. Chemically and mechanically polish the substrate. Then, in order to remove foreign matter such as grinding dust attached to the polished substrate, a substrate cleaning fluid is supplied to the polished substrate and brought into contact with a cleaning tool for friction cleaning, and the substrate is further dried. After a series of processes are completed, the fluid is transferred to the next substrate.

反覆進行上述一連串處理時,噴射流體之噴嘴在基板上的移動位置會產生偏差,流體之供給位置亦產生偏差,結果是很難將處理基板時需要的液體供給至最佳位置。過去,揭示有藉由對研磨墊相對地調整供給噴嘴之前端位置,來對晶圓適切供給研磨漿液的技術。(例如,參照專利文獻1)。 [先前技術文獻] [專利文獻] When the above series of processes are repeated, the moving position of the nozzle for ejecting the fluid on the substrate will deviate, and the supply position of the fluid will also deviate. As a result, it is difficult to supply the liquid required for processing the substrate to the optimal position. In the past, there have been disclosed techniques for appropriately supplying polishing slurry to the wafer by adjusting the position of the front end of the supply nozzle relative to the polishing pad. (For example, refer to Patent Document 1). [Prior technical literature] [Patent Document]

[專利文獻1]日本特開2007-059938號公報[Patent Document 1] Japanese Patent Application Publication No. 2007-059938

(發明所欲解決之問題)(Invent the problem you want to solve)

記載於專利文獻1之技術係依研磨漿液之供給量及晶圓的位置等適當移動供給噴嘴之前端,來調整研磨漿液之供給位置。The technology described in Patent Document 1 is to adjust the supply position of the polishing slurry by appropriately moving the front end of the supply nozzle according to the supply amount of the polishing slurry and the position of the wafer.

另一方面,將基板處理流體供給至適切位置時,流體之供給流量、流體之供給壓力、流體供給閥之開度、流體供給閥一次側之壓力等的動作狀態是影響基板處理流體之供給位置的重要因素,不過,對基板處理流體之供給位置情況複雜且相互作用。因而,正確分析各動作狀態對基板處理流體之供給位置造成何種影響實屬困難。On the other hand, when the substrate processing fluid is supplied to an appropriate position, the operating status of the fluid supply flow rate, the fluid supply pressure, the opening of the fluid supply valve, the pressure on the primary side of the fluid supply valve, etc., affects the supply position of the substrate processing fluid. Important factors, however, are complex and interacting with the substrate processing fluid supply location. Therefore, it is difficult to accurately analyze the impact of each operating state on the supply position of the substrate processing fluid.

本發明之目的係鑑於上述問題而提供一種可依基板處理流體之供給狀態將基板處理流體供給至適切位置之資訊處理裝置、推論裝置、機械學習裝置、資訊處理方法、推論方法、及機械學習方法。 (解決問題之手段) In view of the above problems, the object of the present invention is to provide an information processing device, an inference device, a machine learning device, an information processing method, an inference method, and a machine learning method that can supply a substrate processing fluid to an appropriate position according to the supply state of the substrate processing fluid. . (a means of solving problems)

為了達成上述目的,本發明一個樣態之資訊處理裝置係具備: 資訊取得部,其係取得包含在藉由具備對基板供給處理流體之一個或複數個基板處理流體供給部的基板處理裝置進行之前述基板的處理中顯示從前述基板處理流體供給部供給之基板處理流體的供給狀態之基板處理流體供給狀態資訊的基板處理流體供給資訊;及 狀態預測部,其係藉由在藉由機械學習而學習了前述基板處理流體供給資訊、與顯示前述基板處理裝置動作時前述基板處理流體供給部供給之流體的供給位置之基板處理流體供給位置資訊的相關關係之學習模型中,輸入藉由前述資訊取得部所取得之前述基板處理流體供給資訊,來預測對該基板處理流體供給資訊之前述基板處理流體供給位置資訊。 (發明之效果) In order to achieve the above object, an information processing device according to one aspect of the present invention is provided with: The information acquisition unit acquires the substrate processing shown in the substrate processing performed by the substrate processing apparatus provided with one or a plurality of substrate processing fluid supply units for supplying processing fluid to the substrate supplied from the substrate processing fluid supply unit. The substrate processing fluid supply status information of the fluid supply status is the substrate processing fluid supply information; and The state prediction unit learns the substrate processing fluid supply information through machine learning and the substrate processing fluid supply position information indicating the supply position of the fluid supplied by the substrate processing fluid supply unit when the substrate processing apparatus operates. In the learning model of the correlation, the substrate processing fluid supply information obtained by the information acquisition unit is input to predict the substrate processing fluid supply position information for the substrate processing fluid supply information. (The effect of invention)

採用本發明一個樣態之資訊處理裝置時,由於係藉由將包含基板處理流體供給狀態資訊之基板處理流體供給資訊輸入學習模型,來預測對該基板處理流體供給資訊之基板處理流體供給位置資訊,因此,可依基板處理裝置之基板處理流體供給狀態適切預測基板處理流體供給位置。When the information processing apparatus according to one aspect of the present invention is adopted, the substrate processing fluid supply information including the substrate processing fluid supply status information is input into the learning model to predict the substrate processing fluid supply position information for the substrate processing fluid supply information. , therefore, the substrate processing fluid supply position can be appropriately predicted according to the substrate processing fluid supply status of the substrate processing apparatus.

上述以外之問題、構成及效果,從後述之用於實施發明的形態即可明瞭。Problems, structures, and effects other than those described above will become apparent from the modes for carrying out the invention described below.

以下,參照圖式說明用於實施本發明之實施形態。以下係在用於達成本發明之目的的說明中模式顯示必要的範圍,本發明之該部分的說明中主要說明必要之範圍,而就省略說明之處係按照習知技術者。 (第一種實施形態) Hereinafter, embodiments for carrying out the present invention will be described with reference to the drawings. The following is a schematic representation of the necessary range in the description for achieving the object of the present invention. This part of the description of the present invention mainly describes the necessary range, and omits the description in accordance with the conventional technology. (First implementation form)

圖1係顯示基板處理系統1之一例的整體構成圖。本實施形態之基板處理系統1係作為管理包含:藉由將半導體晶圓等之基板(以下,稱「晶圓」)W按壓於研磨墊,而平坦地研磨晶圓W表面之化學機械研磨處理(以下,稱「研磨處理」);藉由使研磨處理後之晶圓W接觸清洗工具來清洗晶圓W表面之清洗處理;及藉由乾燥工具乾燥清洗後之晶圓W表面的乾燥處理等之一連串基板處理的系統而發揮功能。另外,清洗處理及乾燥處理構成加工處理。FIG. 1 is an overall structural diagram showing an example of the substrate processing system 1. The substrate processing system 1 of this embodiment includes a chemical mechanical polishing process for flatly polishing the surface of a semiconductor wafer or other substrate (hereinafter referred to as "wafer") W by pressing it against a polishing pad. (Hereinafter, referred to as "polishing process"); cleaning process of cleaning the surface of the wafer W by contacting the polished wafer W with a cleaning tool; and drying process of drying the cleaned wafer W surface by a drying tool, etc. It functions as a series of substrate processing systems. In addition, cleaning treatment and drying treatment constitute processing treatment.

基板處理系統1,其主要構成具備:基板處理裝置2、資料庫裝置3、機械學習裝置4、資訊處理裝置5、及使用者終端裝置6。各裝置2~6例如由通用或專用電腦(參照後述之圖8)而構成,並且連接於有線或無線之網路7,並可相互傳送、接收各種資料(圖1中以虛線箭頭圖示一部分資料的傳送接收)而構成。另外,各裝置2~6之數量及網路7的連接構成不限於圖1之例,亦可適當變更。The main components of the substrate processing system 1 include: a substrate processing device 2, a database device 3, a machine learning device 4, an information processing device 5, and a user terminal device 6. Each of the devices 2 to 6 is composed of, for example, a general-purpose or special-purpose computer (see FIG. 8 described later), and is connected to a wired or wireless network 7, and can transmit and receive various data to each other (part of which is shown with a dotted arrow in FIG. 1 transmission and reception of data). In addition, the number of each of the devices 2 to 6 and the connection structure of the network 7 are not limited to the example in FIG. 1 and may be appropriately changed.

基板處理裝置2由複數個單元構成,係作為對1個或複數個晶圓W進行一連串基板處理,例如分別進行裝載、研磨、清洗、乾燥、膜厚量測、卸載等各處理的裝置。此時,基板處理裝置2參照由分別設定於各單元之複數個裝置參數而構成的裝置設定資訊265、及決定研磨處理、清洗處理、乾燥處理之動作狀態等的基板處理方案資訊266,並控制各單元之動作。The substrate processing device 2 is composed of a plurality of units and is a device that performs a series of substrate processing on one or a plurality of wafers W, such as loading, polishing, cleaning, drying, film thickness measurement, and unloading. At this time, the substrate processing device 2 refers to the device setting information 265 composed of a plurality of device parameters set for each unit, and the substrate processing plan information 266 that determines the operation status of the polishing process, the cleaning process, the drying process, etc., and controls Actions of each unit.

基板處理裝置2依各單元之動作,將各種報告R傳送至資料庫裝置3、使用者終端裝置6等。各種報告R中,例如包含:認定進行基板處理時成為對象之晶圓W的工序資訊、進行各處理時顯示各單元狀態之裝置狀態資訊、基板處理裝置2所檢測之事件資訊、使用者(作業人員、生產管理者、保養管理者等)對基板處理裝置2之操作資訊等。The substrate processing apparatus 2 transmits various reports R to the database apparatus 3, the user terminal apparatus 6, etc. according to the operation of each unit. The various reports R include, for example, process information identifying the target wafer W when performing substrate processing, device status information indicating the status of each unit when performing each processing, event information detected by the substrate processing device 2, user (operation personnel, production managers, maintenance managers, etc.) to the operation information of the substrate processing device 2, etc.

資料庫裝置3係管理:關於使用本生產用之基板處理流體供給部進行基板處理時的履歷之生產履歷資訊30;及關於使用測試用之基板處理流體供給部進行基板處理流體供給的測試(以下,稱「基板處理流體供給測試」)時之履歷的基板處理流體供給測試資訊31之裝置。另外,資料庫裝置3中,除了上述之外,亦可記憶裝置設定資訊265及基板處理方案資訊266,此時,基板處理裝置2亦可參照此等資訊。另外,基板處理流體包含:研磨處理中之研磨流體、清洗處理中之清洗流體、及乾燥處理中之乾燥流體的至少1個。因此,基板處理流體供給測試包含:研磨處理之測試、清洗處理之測試、及乾燥處理之測試的至少1個。The database device 3 manages: production history information 30 regarding the history of substrate processing using the substrate processing fluid supply unit for production; and testing of substrate processing fluid supply using the substrate processing fluid supply unit for testing (hereinafter (called "Substrate Processing Fluid Supply Test") is a device for recording substrate processing fluid supply test information 31. In addition, in addition to the above, the database device 3 can also store the device setting information 265 and the substrate processing plan information 266. At this time, the substrate processing device 2 can also refer to this information. In addition, the substrate processing fluid includes at least one of a polishing fluid in a polishing process, a cleaning fluid in a cleaning process, and a drying fluid in a drying process. Therefore, the substrate processing fluid supply test includes at least one of a grinding process test, a cleaning process test, and a drying process test.

資料庫裝置3在基板處理裝置2使用本生產用之基板處理流體供給部進行基板處理時,藉由隨時從基板處理裝置2接收各種報告R,並登錄於生產履歷資訊30,而在生產履歷資訊30中儲存關於基板處理之報告R。The database device 3 receives various reports R from the substrate processing device 2 at any time and registers them in the production history information 30 when the substrate processing device 2 performs substrate processing using the substrate processing fluid supply unit for production. A report R on substrate processing is stored in 30 .

資料庫裝置3在基板處理裝置2使用測試用之基板處理流體供給部進行基板處理流體供給測試時,從基板處理裝置2隨時接收各種報告R(至少包含裝置狀態資訊),而登錄於基板處理流體供給測試資訊31,並且藉由將其基板處理流體供給測試之測試結果相對應而登錄,而在基板處理流體供給測試資訊31中儲存關於基板處理流體供給測試之報告R及測試結果。基板處理流體供給測試亦可由本生產用之基板處理裝置2來進行,亦可由可重現與基板處理裝置2同樣之基板處理流體的供給之測試用基板處理流體供給測試裝置(無圖示)來進行。When the substrate processing device 2 performs a substrate processing fluid supply test using the test substrate processing fluid supply unit, the database device 3 receives various reports R (including at least device status information) from the substrate processing device 2 at any time, and registers them in the substrate processing fluid. The test information 31 is supplied and registered by correlating the test results of the substrate processing fluid supply test, and the report R and the test results on the substrate processing fluid supply test are stored in the substrate processing fluid supply test information 31 . The substrate processing fluid supply test can also be performed by the substrate processing device 2 for production, or by a test substrate processing fluid supply test device (not shown) that can reproduce the same supply of substrate processing fluid as the substrate processing device 2 conduct.

在測試用之基板處理流體供給部及基板處理流體供給測試裝置中,作為基板處理流體供給部之條件而設置例如用於量測:從基板處理流體供給部供給之基板處理流體的流量、從基板處理流體供給部供給之基板處理流體的壓力、調整基板處理流體之流量的基板處理流體供給閥之狀態、及調整基板處理流體之流量的基板處理流體供給閥之一次側壓力的各種基板處理流體供給狀態量測設備(無圖示),並將基板處理流體供給狀態量測設備之量測值作為測試結果而登錄於基板處理流體供給測試資訊31。In the substrate processing fluid supply unit for testing and the substrate processing fluid supply test device, conditions for the substrate processing fluid supply unit are provided for measuring, for example: the flow rate of the substrate processing fluid supplied from the substrate processing fluid supply unit, the flow rate of the substrate processing fluid supplied from the substrate processing fluid supply unit, and the flow rate of the substrate processing fluid supply unit. Various substrate processing fluid supplies include the pressure of the substrate processing fluid supplied from the processing fluid supply unit, the state of the substrate processing fluid supply valve that adjusts the flow rate of the substrate processing fluid, and the primary side pressure of the substrate processing fluid supply valve that adjusts the flow rate of the substrate processing fluid. A state measuring device (not shown) is used, and the measurement value of the substrate processing fluid supply state measuring device is registered in the substrate processing fluid supply test information 31 as a test result.

機械學習裝置4作為機械學習之學習階段的主體而動作,例如,從資料庫裝置3取得基板處理流體供給測試資訊31之一部分作為第一學習用資料11A,並藉由機械學習而生成供資訊處理裝置5使用之第一學習模型10A。學習完成之第一學習模型10A經由網路7及記錄媒體等而提供至資訊處理裝置5。The machine learning device 4 operates as the main body of the learning phase of machine learning. For example, it obtains a part of the substrate processing fluid supply test information 31 from the database device 3 as the first learning data 11A, and generates information processing through machine learning. The first learning model 10A used by the device 5 . The first learning model 10A that has been learned is provided to the information processing device 5 via the network 7, a recording medium, and the like.

資訊處理裝置5作為機械學習之推論階段的主體而動作,使用藉由機械學習裝置4所生成之第一學習模型10A,並使用本生產用之基板處理流體供給部進行藉由基板處理裝置2之基板處理流體的供給時,預測該基板處理流體供給位置,並將該預測結果之基板處理流體供給位置資訊傳送至資料庫裝置3、使用者終端裝置6等。資訊處理裝置5預測基板處理流體供給位置資訊之時機亦可在進行供給基板處理流體之後(事後預測處理)、亦可在進行供給基板處理流體期間(實時預測處理)、亦可在進行供給基板處理流體之前(事前預測處理)。The information processing device 5 operates as the main body of the inference phase of machine learning, uses the first learning model 10A generated by the machine learning device 4, and performs the processing by the substrate processing device 2 using the substrate processing fluid supply unit for this production. When supplying the substrate processing fluid, the substrate processing fluid supply position is predicted, and the substrate processing fluid supply position information of the prediction result is transmitted to the database device 3, the user terminal device 6, and the like. The information processing device 5 may predict the timing of supplying the substrate processing fluid position information after supplying the substrate processing fluid (post-post prediction processing), during supplying the substrate processing fluid (real-time prediction processing), or while supplying the substrate processing fluid. before fluid (pre-predictive processing).

使用者終端裝置6係使用者使用之終端裝置,亦可係固定型之裝置,亦可係攜帶型之裝置。使用者終端裝置6例如經由應用程式、網頁瀏覽器等之顯示畫面受理各種輸入操作,並且經由顯示畫面顯示各種資訊(例如,通知事件、基板處理流體供給位置資訊、生產履歷資訊30、基板處理流體供給測試資訊31等)。 (基板處理裝置2) The user terminal device 6 is a terminal device used by the user, and may be a fixed device or a portable device. The user terminal device 6 accepts various input operations via a display screen of an application, a web browser, etc., and displays various information (for example, notification events, substrate processing fluid supply position information, production history information 30, substrate processing fluid, etc.) via the display screen. Provide test information 31, etc.). (Substrate processing device 2)

圖2係顯示基板處理裝置2之一例的俯視圖。基板處理裝置2在平面觀看為概略矩形狀之機架20的內部具備:裝載/卸載單元21、研磨單元22、基板搬送單元23、加工單元24、膜厚量測單元25、及控制單元26而構成。裝載/卸載單元21與研磨單元22、基板搬送單元23及加工單元24之間藉由第一分隔壁200A劃分,基板搬送單元23與加工單元24之間藉由第二分隔壁200B劃分。 (裝載/卸載單元) FIG. 2 is a top view showing an example of the substrate processing apparatus 2. The substrate processing apparatus 2 includes a loading/unloading unit 21, a polishing unit 22, a substrate transport unit 23, a processing unit 24, a film thickness measurement unit 25, and a control unit 26 inside a frame 20 that is generally rectangular in plan view. composition. The loading/unloading unit 21 and the polishing unit 22, the substrate transport unit 23 and the processing unit 24 are partitioned by a first partition wall 200A, and the substrate transport unit 23 and the processing unit 24 are partitioned by a second partition wall 200B. (Load/unload unit)

裝載/卸載單元21具備:裝載可在上下方向收納多片晶圓W之晶圓匣盒(FOUP等)的第一至第四前裝載部210A~210D;可沿著收納於晶圓匣盒之晶圓W的收納方向(上下方向)而上下移動之搬送機器人211;及使搬送機器人211沿著第一至第四前裝載部210A~210D之排列方向(機架20的短邊方向)而移動的水平移動機構部212。The loading/unloading unit 21 is provided with: first to fourth front loading portions 210A to 210D for loading a wafer cassette (FOUP, etc.) capable of accommodating a plurality of wafers W in the vertical direction; The transfer robot 211 moves up and down in the storage direction (up and down direction) of the wafer W; and the transfer robot 211 is moved along the arrangement direction of the first to fourth front loading sections 210A to 210D (the short side direction of the rack 20 ). The horizontal movement mechanism part 212.

搬送機器人211構成可對分別裝載於第一至第四前裝載部210A~210D之晶圓匣盒、基板搬送單元23(具體而言,係後述之升降機232)、加工單元24(具體而言,係後述之第一及第二乾燥部24E、24F)、及膜厚量測單元25存取而構成,並在此等之間具備用於交接晶圓W之上下二階的手臂(無圖示)。下側手臂使用於交接處理前之晶圓W時,上側手臂使用於交接處理後之晶圓W時。對基板搬送單元23及加工單元24交接晶圓W時,開閉設於第一分隔壁200A之快門(無圖示)。 (研磨單元) The transfer robot 211 is configured to handle the wafer cassettes loaded on the first to fourth front loading units 210A to 210D, the substrate transfer unit 23 (specifically, the elevator 232 to be described later), and the processing unit 24 (specifically, It is configured to provide access to the first and second drying sections 24E, 24F) and the film thickness measuring unit 25, which will be described later, and is provided with upper and lower arms (not shown) for transferring the wafer W between them. . The lower arm is used to transfer the wafer W before processing, and the upper arm is used to transfer the wafer W after processing. When transferring the wafer W to the substrate transfer unit 23 and the processing unit 24 , a shutter (not shown) provided in the first partition wall 200A is opened and closed. (grinding unit)

研磨單元22具備分別進行晶圓W之研磨處理(平坦化)的第一至第四研磨部22A~22D。第一至第四研磨部22A~22D係沿著機架20之長度方向排列而配置。The polishing unit 22 includes first to fourth polishing parts 22A to 22D that respectively perform polishing processing (planarization) of the wafer W. The first to fourth polishing parts 22A to 22D are arranged along the length direction of the frame 20 .

圖3係顯示第一至第四研磨部22A~22D之一例的立體圖。第一至第四研磨部22A~22D之基本構成及功能相同。FIG. 3 is a perspective view showing an example of the first to fourth polishing parts 22A to 22D. The first to fourth polishing parts 22A to 22D have the same basic structure and function.

第一至第四研磨部22A~22D分別具備:可旋轉地支撐具有研磨面之研磨墊2200的研磨台220;保持晶圓W,且用於將晶圓W按壓於研磨台220上之研磨墊2200而研磨的頂環(研磨頭)221;對研磨墊2200供給研磨流體之研磨流體供給噴嘴222;可旋轉地支撐修整盤2230,並且使修整盤2230接觸研磨墊2200之研磨面來修整研磨墊2200之修整器223;及在研磨墊2200上噴射清洗流體之霧化器224。The first to fourth polishing sections 22A to 22D respectively include: a polishing table 220 that rotatably supports a polishing pad 2200 having a polishing surface; and a polishing pad that holds the wafer W and presses the wafer W onto the polishing table 220 2200 for grinding the top ring (polishing head) 221; the grinding fluid supply nozzle 222 that supplies grinding fluid to the grinding pad 2200; rotatably supports the dressing disc 2230, and makes the dressing disc 2230 contact the polishing surface of the polishing pad 2200 to condition the polishing pad 2200's dresser 223; and an atomizer 224 that sprays cleaning fluid on the polishing pad 2200.

研磨台220具備:藉由研磨台軸桿220a支撐,並使研磨台220在其軸心周圍旋轉驅動之旋轉移動機構部220b;及調節研磨墊2200之表面溫度的調溫機構部220c。The polishing table 220 includes a rotational movement mechanism part 220b that is supported by a polishing table shaft 220a and drives the polishing table 220 to rotate around its axis; and a temperature control mechanism part 220c that adjusts the surface temperature of the polishing pad 2200.

頂環221具備:被可在上下方向移動之頂環軸桿221a支撐,並使頂環221在其軸心周圍旋轉驅動之旋轉移動機構部221c;使頂環221在上下方向移動之上下移動機構部221d;及將支撐軸桿221b形成回轉中心,而使頂環221回轉(搖動)移動之搖動移動機構部221e。The top ring 221 is provided with: a rotational movement mechanism portion 221c that is supported by a top ring shaft 221a that can move in the vertical direction and drives the top ring 221 to rotate around its axis; and a vertical movement mechanism that moves the top ring 221 in the vertical direction. part 221d; and a swing moving mechanism part 221e that forms the support shaft 221b as a center of rotation and rotates (swings) the top ring 221.

研磨流體供給噴嘴222具備:被支撐軸桿222a支撐,將支撐軸桿222a形成回轉中心而使研磨流體供給噴嘴222回轉移動之搖動移動機構部222b;調節研磨流體之流量的流量調節部222c;及調節研磨流體之溫度的調溫機構部222d。研磨流體係研磨液(漿液)或純水,再者,亦可係包含藥液者,亦可係在研磨液中添加分散劑者。研磨流體供給噴嘴222構成基板處理流體供給部。The grinding fluid supply nozzle 222 is provided with: a rocking movement mechanism part 222b that is supported by the support shaft 222a and makes the support shaft 222a a rotation center to rotate the grinding fluid supply nozzle 222; a flow rate adjustment part 222c that adjusts the flow rate of the grinding fluid; and The temperature control mechanism part 222d adjusts the temperature of the grinding fluid. The grinding fluid system may be grinding liquid (slurry) or pure water. Furthermore, it may also contain a chemical solution, or a dispersant may be added to the grinding liquid. The polishing fluid supply nozzle 222 constitutes a substrate processing fluid supply unit.

修整器223具備:被可在上下方向移動之修整器軸桿223a支撐,並使修整器223在其軸心周圍旋轉驅動之旋轉移動機構部223c;使修整器223在上下方向移動之上下移動機構部223d;及將支撐軸桿223b形成回轉中心,而使修整器223回轉移動之搖動移動機構部223e。The dresser 223 is provided with: a rotational movement mechanism portion 223c that is supported by a dresser shaft 223a that can move in the vertical direction and drives the dresser 223 to rotate around its axis; and a vertical movement mechanism that moves the dresser 223 in the vertical direction. part 223d; and a swing movement mechanism part 223e that forms the support shaft 223b into a center of rotation to rotate the dresser 223.

霧化器224具備:被支撐軸桿224a支撐,並將支撐軸桿224a形成回轉中心,而使霧化器224回轉移動之搖動移動機構部224b;及調節清洗流體之流量的流量調節部224c。清洗流體係液體(例如,純水)與氣體(例如,氮氣)之混合流體或液體(例如,純水)。The atomizer 224 includes a swing movement mechanism part 224b that is supported by the support shaft 224a and makes the support shaft 224a form a rotation center to rotate the atomizer 224; and a flow rate adjustment part 224c that adjusts the flow rate of the cleaning fluid. The cleaning fluid system is a mixed fluid or liquid (for example, pure water) of a liquid (for example, pure water) and a gas (for example, nitrogen).

晶圓W吸附保持於頂環221之下面,移動至研磨台220上之指定研磨位置後,藉由頂環221對從研磨流體供給噴嘴222供給了研磨流體之研磨墊2200的研磨面按壓來進行研磨。 (基板搬送單元) The wafer W is adsorbed and held under the top ring 221, and after moving to a designated polishing position on the polishing table 220, the top ring 221 presses the polishing surface of the polishing pad 2200 to which the polishing fluid is supplied from the polishing fluid supply nozzle 222. Grind. (Substrate transfer unit)

基板搬送單元23如圖2所示具備:可沿著第一至第四研磨部22A~22D之排列方向(機架20之長度方向)而水平移動的第一及第二線性傳輸機230A、230B;配置於第一及第二線性傳輸機230A、230B之間的搖擺傳輸機231;配置於裝載/卸載單元21側之升降機232;及配置於加工單元24側之晶圓W的暫放台233。As shown in FIG. 2 , the substrate transfer unit 23 includes first and second linear conveyors 230A and 230B that can move horizontally along the arrangement direction of the first to fourth polishing parts 22A to 22D (the longitudinal direction of the frame 20 ). ; a swing conveyor 231 disposed between the first and second linear conveyors 230A, 230B; an elevator 232 disposed on the loading/unloading unit 21 side; and a temporary placing table 233 for the wafer W disposed on the processing unit 24 side .

第一線性傳輸機230A係鄰接於第一及第二研磨部22A、22B而配置,並在4個搬送位置(從裝載/卸載單元21側起依序為第一至第四搬送位置TP1~TP4)之間搬送晶圓W的機構。第二搬送位置TP2係對第一研磨部22A交接晶圓W之位置,第三搬送位置TP3係對第二研磨部22B交接晶圓W之位置。The first linear conveyor 230A is arranged adjacent to the first and second grinding parts 22A and 22B, and is located at four conveying positions (first to fourth conveying positions TP1 to TP1 in order from the loading/unloading unit 21 side). TP4) A mechanism for transporting wafer W between TP4). The second transfer position TP2 is a position for transferring the wafer W to the first polishing unit 22A, and the third transfer position TP3 is a position for transferring the wafer W to the second polishing unit 22B.

第二線性傳輸機230B鄰接於第三及第四研磨部22C、22D而配置,並係在3個搬送位置(從裝載/卸載單元21側起依序為第五至第七搬送位置TP5~TP7)之間搬送晶圓W的機構。第六搬送位置TP6係對第三研磨部22C交接晶圓W之位置,第七搬送位置TP7係對第四研磨部22D交接晶圓W之位置。The second linear conveyor 230B is arranged adjacent to the third and fourth polishing parts 22C and 22D, and is connected to three transfer positions (the fifth to seventh transfer positions TP5 to TP7 in order from the loading/unloading unit 21 side). ) is a mechanism for transporting wafer W between The sixth transfer position TP6 is a position for transferring the wafer W to the third polishing unit 22C, and the seventh transfer position TP7 is a position for transferring the wafer W to the fourth polishing unit 22D.

搖擺傳輸機231鄰接於第四及第五搬送位置TP4、TP5而配置,並且具有可在第四及第五搬送位置TP4、TP5之間移動的手臂。搖擺傳輸機231係在第一及第二線性傳輸機230A、230B之間交接晶圓W,並且在暫放台233上暫時放置晶圓W的機構。升降機232係鄰接於第一搬送位置TP1而配置,並在與裝載/卸載單元21的搬送機器人211之間交接晶圓W的機構。交接晶圓W時,開閉設於第一分隔壁200A之快門(無圖示)。 (加工單元) The swing conveyor 231 is arranged adjacent to the fourth and fifth transfer positions TP4 and TP5, and has an arm movable between the fourth and fifth transfer positions TP4 and TP5. The swing conveyor 231 is a mechanism that transfers the wafer W between the first and second linear conveyors 230A and 230B and temporarily places the wafer W on the temporary placement table 233 . The elevator 232 is a mechanism that is disposed adjacent to the first transfer position TP1 and transfers the wafer W to the transfer robot 211 of the loading/unloading unit 21 . When transferring the wafer W, the shutter (not shown) provided in the first partition wall 200A is opened and closed. (processing unit)

加工單元24如圖2所示,作為使用滾筒海綿2400之基板清洗裝置,而具備配置於上下二階之第一及第二滾筒海綿清洗部24A、24B;作為使用筆型海綿2401之基板清洗裝置,而具備配置於上下二階之第一及第二筆型海綿清洗部24C、24D;作為使清洗後之晶圓W乾燥的基板乾燥裝置,而具備配置於上下二階之第一及第二乾燥部24E、24F;及具備搬送晶圓W之第一及第二搬送部24G、24H。另外,滾筒海綿清洗部24A、24B、筆型海綿清洗部24C、24D、乾燥部24E、24F、及搬送部24G、24H的數量及配置不限於圖2之例,亦可適當變更。另外,滾筒海綿清洗部24A、24B及筆型海綿清洗部24C、24D構成清洗單元,乾燥部24E、24F構成乾燥單元。As shown in FIG. 2 , the processing unit 24 is a substrate cleaning device using a roller sponge 2400, and is equipped with first and second roller sponge cleaning parts 24A and 24B arranged on the upper and lower levels; and is a substrate cleaning device using a pen-type sponge 2401. It is provided with first and second pen-shaped sponge cleaning parts 24C and 24D arranged on the upper and lower levels; as a substrate drying device for drying the cleaned wafer W, it is equipped with the first and second drying parts 24E arranged on the upper and lower levels. , 24F; and equipped with first and second transport parts 24G and 24H for transporting the wafer W. In addition, the number and arrangement of the roller sponge cleaning parts 24A and 24B, the pen sponge cleaning parts 24C and 24D, the drying parts 24E and 24F, and the conveying parts 24G and 24H are not limited to the example in FIG. 2 and may be changed appropriately. In addition, the roller sponge cleaning parts 24A and 24B and the pen sponge cleaning parts 24C and 24D constitute a cleaning unit, and the drying parts 24E and 24F constitute a drying unit.

加工單元24之各部24A~24H在分別被劃分的狀態下沿著第一及第二線性傳輸機230A、230B,例如依序配置於第一及第二滾筒海綿清洗部24A、24B、第一搬送部24G、第一及第二筆型海綿清洗部24C、24D、第二搬送部24H、及第一及第二乾燥部24E、24F(自裝載/卸載單元21遠離之順序)。加工單元24對研磨處理後之晶圓W依序進行:藉由第一及第二滾筒海綿清洗部24A、24B的其中之一的一次清洗處理;藉由第一及第二筆型海綿清洗部24C、24D的其中之一的二次清洗處理;及藉由第一及第二乾燥部24E、24F的其中之一的乾燥處理。The respective parts 24A to 24H of the processing unit 24 are arranged in a divided state along the first and second linear conveyors 230A and 230B, for example, in the first and second roller sponge cleaning parts 24A and 24B, and the first conveyor in sequence. part 24G, the first and second pen-type sponge cleaning parts 24C and 24D, the second conveying part 24H, and the first and second drying parts 24E and 24F (in the order of moving away from the loading/unloading unit 21). The processing unit 24 sequentially performs a cleaning process on the polished wafer W: through one of the first and second roller sponge cleaning parts 24A and 24B; through the first and second pen-type sponge cleaning parts A secondary cleaning process in one of 24C and 24D; and a drying process in one of the first and second drying parts 24E and 24F.

滾筒海綿2400及筆型海綿2401由PVA、尼龍等合成樹脂形成,並具有多孔質構造。滾筒海綿2400及筆型海綿2401作為用於摩擦清洗晶圓W之清洗工具而發揮功能,並可更換地分別安裝於第一及第二滾筒海綿清洗部24A、24B、與第一及第二筆型海綿清洗部24C、24D。The roller sponge 2400 and the pen sponge 2401 are made of synthetic resin such as PVA, nylon, etc., and have a porous structure. The roller sponge 2400 and the pen sponge 2401 function as cleaning tools for friction cleaning the wafer W, and are replaceably installed in the first and second roller sponge cleaning parts 24A, 24B, and the first and second pen sponges, respectively. Type sponge cleaning parts 24C, 24D.

第一搬送部24G具備可在上下方向移動之第一搬送機器人246A。第一搬送機器人246A可對基板搬送單元23之暫放台233、第一及第二滾筒海綿清洗部24A、24B、與第一及第二筆型海綿清洗部24C、24D存取地構成,並具備用於在此等之間交接晶圓W的上下二階之手臂。例如,下側手臂使用在交接清洗前之晶圓W時,上側手臂使用在交接清洗後之晶圓W時。對暫放台233交接晶圓W時,開閉設於第二分隔壁200B之快門(無圖示)。The first conveyance unit 24G is provided with a first conveyance robot 246A that can move in the up-and-down direction. The first transfer robot 246A is configured to be able to access the temporary placement table 233 of the substrate transfer unit 23, the first and second roller sponge cleaning parts 24A and 24B, and the first and second pen type sponge cleaning parts 24C and 24D, and There are two upper and lower arms for transferring the wafer W between them. For example, the lower arm is used to transfer the wafer W before cleaning, and the upper arm is used to transfer the wafer W after cleaning. When transferring the wafer W to the temporary stage 233, the shutter (not shown) provided in the second partition wall 200B is opened and closed.

第二搬送部24H具備可在上下方向移動之第二搬送機器人246B。第二搬送機器人246B可對第一及第二筆型海綿清洗部24C、24D、與第一及第二乾燥部24E、24F存取地構成,並具備用於在此等之間交接晶圓W的手臂。The second conveyance unit 24H is provided with a second conveyance robot 246B that can move in the up-and-down direction. The second transfer robot 246B is configured to be able to access the first and second pen-shaped sponge cleaning units 24C and 24D and the first and second drying units 24E and 24F, and is equipped for transferring the wafer W therebetween. arm.

圖4係顯示第一及第二滾筒海綿清洗部24A、24B之一例的立體圖。第一及第二滾筒海綿清洗部24A、24B之基本構成及功能相同。圖4之例係第一及第二滾筒海綿清洗部24A、24B具有以夾著晶圓W之被清洗面(表面及背面)的方式而配置於上下之一對滾筒海綿2400。FIG. 4 is a perspective view showing an example of the first and second roller sponge cleaning parts 24A and 24B. The first and second roller sponge cleaning parts 24A and 24B have the same basic structure and function. In the example of FIG. 4 , the first and second roller sponge cleaning units 24A and 24B have a pair of roller sponges 2400 arranged up and down so as to sandwich the surface to be cleaned (front and back) of the wafer W.

第一及第二滾筒海綿清洗部24A、24B分別具備:保持晶圓W之基板保持部241;對晶圓W供給基板清洗流體之清洗流體供給部242;可旋轉地支撐滾筒海綿2400,並且使滾筒海綿2400接觸晶圓W來清洗晶圓W之基板清洗部240;以清洗工具清洗流體清洗(自清理)滾筒海綿2400之清洗工具清洗部243;及量測進行清洗處理之機架20的內部空間狀態之環境檢測器244。The first and second roller sponge cleaning parts 24A and 24B each include a substrate holding part 241 that holds the wafer W; a cleaning fluid supply part 242 that supplies a substrate cleaning fluid to the wafer W; and a roller sponge 2400 that is rotatably supported and used. The roller sponge 2400 contacts the wafer W to clean the substrate cleaning part 240 of the wafer W; the cleaning tool cleaning part 243 of the roller sponge 2400 is cleaned (self-cleaning) with a cleaning tool cleaning fluid; and the inside of the rack 20 for cleaning is measured. Space state environment detector 244.

基板保持部241具備:保持晶圓W側緣部之複數個部位的基板保持機構部241a;及使晶圓W在垂直於晶圓W之被清洗面的第三旋轉軸周圍旋轉之基板旋轉機構部241b。圖4之例係基板保持機構部241a為2個從動滾子,且至少1個從動滾子係可對晶圓W之側緣部在保持方向或離開方向移動地構成。基板旋轉機構部241b係2個驅動滾子。另外,基板保持部241可為由複數個從動滾子構成之基板保持機構部241a、與由至少1個驅動滾子構成之基板旋轉機構部241b。The substrate holding portion 241 includes a substrate holding mechanism portion 241 a that holds a plurality of side edge portions of the wafer W; and a substrate rotating mechanism that rotates the wafer W around a third rotation axis perpendicular to the surface to be cleaned of the wafer W. Section 241b. In the example of FIG. 4 , the substrate holding mechanism part 241 a has two driven rollers, and at least one driven roller is configured to be movable in the holding direction or the separation direction with respect to the side edge of the wafer W. The substrate rotation mechanism part 241b is composed of two driving rollers. In addition, the substrate holding part 241 may be a substrate holding mechanism part 241a composed of a plurality of driven rollers, and a substrate rotating mechanism part 241b composed of at least one driving roller.

清洗流體供給部242具備:在晶圓W之被清洗面供給基板清洗流體之清洗流體供給噴嘴242a;使清洗流體供給噴嘴242a回轉移動之搖動移動機構部242b;使清洗流體供給噴嘴242a上下移動之上下移動機構部242c;調節基板清洗流體之流量及壓力的流量調節部242d;及調節基板清洗流體之溫度的調溫機構部242e。清洗流體供給噴嘴242a構成基板處理流體供給部。基板清洗流體亦可係純水(沖洗液)及藥液之其中一個,清洗流體供給噴嘴242a如圖4所示,亦可分別設置純水用之噴嘴、及藥液用之噴嘴。此外,基板清洗流體亦可係液體,亦可係混合液體及氣體之雙流體,亦可係包含如乾冰之固體者。The cleaning fluid supply unit 242 includes a cleaning fluid supply nozzle 242a that supplies a substrate cleaning fluid to the surface of the wafer W to be cleaned; a swing movement mechanism unit 242b that rotates the cleaning fluid supply nozzle 242a; and a cleaning fluid supply nozzle 242a that moves the cleaning fluid supply nozzle 242a up and down. The vertical movement mechanism part 242c; the flow rate adjustment part 242d that adjusts the flow rate and pressure of the substrate cleaning fluid; and the temperature adjustment mechanism part 242e that adjusts the temperature of the substrate cleaning fluid. The cleaning fluid supply nozzle 242a constitutes a substrate processing fluid supply unit. The substrate cleaning fluid can also be one of pure water (rinsing liquid) and chemical liquid. The cleaning fluid supply nozzle 242a is shown in FIG. 4 , and a nozzle for pure water and a nozzle for chemical liquid can also be provided respectively. In addition, the substrate cleaning fluid can also be a liquid, a two-fluid mixture of liquid and gas, or a solid such as dry ice.

基板清洗部240具備:使滾筒海綿2400在與晶圓W之被清洗面平行的第一旋轉軸周圍旋轉之清洗工具旋轉機構部240a;為了變更一對滾筒海綿2400之高度及兩者的離開距離,而使一對滾筒海綿2400之至少一方在上下方向移動之上下移動機構部240b;及使一對滾筒海綿2400在水平方向直線移動之直線移動機構部240c。上下移動機構部240b及直線移動機構部240c係發揮使滾筒海綿2400與晶圓W的被清洗面之相對位置移動的清洗工具移動機構部之功能。The substrate cleaning unit 240 is provided with a cleaning tool rotating mechanism unit 240a that rotates the roller sponge 2400 around a first rotation axis parallel to the surface to be cleaned of the wafer W; in order to change the height of the pair of roller sponges 2400 and the distance between them , to move at least one of the pair of roller sponges 2400 in the up and down direction, the upper and lower moving mechanism part 240b; and the linear moving mechanism part 240c to make the pair of roller sponges 2400 linearly move in the horizontal direction. The vertical movement mechanism part 240b and the linear movement mechanism part 240c function as a cleaning tool moving mechanism part that moves the relative position between the roller sponge 2400 and the surface of the wafer W to be cleaned.

清洗工具清洗部243配置於不與晶圓W干擾之位置,且具備:可貯存及排出清洗工具清洗流體之清洗工具清洗槽243a;收容於清洗工具清洗槽243a,並按壓滾筒海綿2400之清洗工具清洗板243b;調節供給至清洗工具清洗槽243a之清洗工具清洗流體的流量及壓力之流量調節部243c;及在滾筒海綿2400內側流通,調節從滾筒海綿2400之外周面排出外部的清洗工具清洗流體之流量及壓力的流量調節部243d。清洗工具清洗流體亦可係純水(沖洗液)及藥液之其中一個。The cleaning tool cleaning part 243 is arranged in a position that does not interfere with the wafer W, and has: a cleaning tool cleaning tank 243a that can store and discharge the cleaning tool cleaning fluid; a cleaning tool that is accommodated in the cleaning tool cleaning tank 243a and presses the roller sponge 2400 The cleaning plate 243b; the flow regulating part 243c that regulates the flow rate and pressure of the cleaning tool cleaning fluid supplied to the cleaning tool cleaning tank 243a; and the flow regulating part 243c that circulates inside the roller sponge 2400 and regulates the external cleaning tool cleaning fluid discharged from the outer peripheral surface of the roller sponge 2400. The flow rate and pressure flow regulating part 243d. The cleaning fluid for cleaning tools can also be one of pure water (rinsing fluid) and chemical liquid.

環境檢測器244例如具備:溫度檢測器244a、及濕度檢測器244b。另外,環境檢測器244亦可具備在清洗處理中或清洗處理前後可拍攝晶圓W及滾筒海綿2400之表面等的攝影機(影像檢測器)。The environment detector 244 includes, for example, a temperature detector 244a and a humidity detector 244b. In addition, the environment detector 244 may also be equipped with a camera (image detector) that can photograph the surface of the wafer W and the roller sponge 2400 during or before and after the cleaning process.

第一及第二滾筒海綿清洗部24A、24B之一次清洗處理,係晶圓W在藉由基板保持機構部241a保持狀態下藉由基板旋轉機構部241b來旋轉。而後,在從清洗流體供給噴嘴242a供給基板清洗流體至晶圓W之被清洗面的狀態下,藉由清洗工具旋轉機構部240a而在軸心周圍旋轉之滾筒海綿2400,藉由與晶圓W之被清洗面滑動接觸來清洗晶圓W。然後,基板清洗部240係使滾筒海綿2400移動至清洗工具清洗槽243a,例如使滾筒海綿2400旋轉,或按壓於清洗工具清洗板243b,並藉由流量調節部243d將清洗工具清洗流體供給至滾筒海綿2400來清洗滾筒海綿2400。In the primary cleaning process of the first and second roller sponge cleaning units 24A and 24B, the wafer W is rotated by the substrate rotating mechanism unit 241b while being held by the substrate holding mechanism unit 241a. Then, in a state where the substrate cleaning fluid is supplied from the cleaning fluid supply nozzle 242a to the surface to be cleaned of the wafer W, the roller sponge 2400 rotates around the axis by the cleaning tool rotation mechanism part 240a, and interacts with the wafer W. The surface to be cleaned is in sliding contact to clean the wafer W. Then, the substrate cleaning part 240 moves the roller sponge 2400 to the cleaning tool cleaning tank 243a, for example, rotates the roller sponge 2400, or presses the cleaning tool cleaning plate 243b, and supplies the cleaning tool cleaning fluid to the roller through the flow adjustment part 243d. Sponge 2400 is used to clean the roller sponge 2400.

圖5係顯示第一及第二筆型海綿清洗部24C、24D之一例的立體圖。第一及第二筆型海綿清洗部24C、24D之基本構成及功能相同。FIG. 5 is a perspective view showing an example of the first and second pen-type sponge cleaning parts 24C and 24D. The first and second pen-shaped sponge cleaning parts 24C and 24D have the same basic structure and function.

第一及第二筆型海綿清洗部24C、24D分別具備:保持晶圓W之基板保持部241;對晶圓W供給基板清洗流體之清洗流體供給部242;可旋轉地支撐筆型海綿2401,並且使筆型海綿2401接觸晶圓W來清洗晶圓W之基板清洗部240;以清洗工具清洗流體清洗(自清理)筆型海綿2401之清洗工具清洗部243;及量測進行清洗處理之機架20的內部空間狀態之環境檢測器244。以下,就筆型海綿清洗部24C、24D主要說明與滾筒海綿清洗部24A、24B不同之部分。The first and second pen-type sponge cleaning parts 24C and 24D each include a substrate holding part 241 that holds the wafer W; a cleaning fluid supply part 242 that supplies a substrate cleaning fluid to the wafer W; and a pen-type sponge 2401 that is rotatably supported. And the pen-shaped sponge 2401 is brought into contact with the wafer W to clean the substrate cleaning part 240 of the wafer W; the cleaning tool cleaning part 243 of the pen-shaped sponge 2401 is cleaned (self-cleaning) with a cleaning tool cleaning fluid; and the machine for performing the cleaning process is measured. Environment detector 244 for the internal space status of the rack 20 . Hereinafter, the differences between the pen-type sponge cleaning parts 24C and 24D and the roller sponge cleaning parts 24A and 24B will be mainly explained.

基板保持部241具備:保持晶圓W側緣部之複數個部位的基板保持機構部241c;及使晶圓W在垂直於晶圓W之被清洗面的第三旋轉軸周圍旋轉之基板旋轉機構部241d。圖5之例係基板保持機構部241c為2個從動滾子,且至少1個從動滾子係可對晶圓W之側緣部在保持方向或離開方向移動地構成,基板旋轉機構部241d係2個驅動滾子。另外,基板保持部241可為由複數個從動滾子構成之基板保持機構部241c、與由至少1個驅動滾子構成之基板旋轉機構部241d。The substrate holding portion 241 includes: a substrate holding mechanism portion 241c that holds a plurality of side edge portions of the wafer W; and a substrate rotating mechanism that rotates the wafer W around a third rotation axis perpendicular to the surface to be cleaned of the wafer W. Section 241d. In the example of FIG. 5 , the substrate holding mechanism part 241 c is composed of two driven rollers, and at least one driven roller is movable in the holding direction or the separation direction with respect to the side edge of the wafer W. The substrate rotating mechanism part 241d series has 2 driving rollers. In addition, the substrate holding part 241 may be a substrate holding mechanism part 241c composed of a plurality of driven rollers, and a substrate rotating mechanism part 241d composed of at least one driving roller.

清洗流體供給部242與圖4同樣地構成,而具備:清洗流體供給噴嘴242a、搖動移動機構部242b、上下移動機構部242c、流量調節部242d、及調溫機構部242e。清洗流體供給噴嘴242a構成基板處理流體供給部。The cleaning fluid supply part 242 is configured similarly to FIG. 4 and includes a cleaning fluid supply nozzle 242a, a swing movement mechanism part 242b, a vertical movement mechanism part 242c, a flow rate adjustment part 242d, and a temperature control mechanism part 242e. The cleaning fluid supply nozzle 242a constitutes a substrate processing fluid supply unit.

基板清洗部240具備:使筆型海綿2401在垂直於晶圓W之被清洗面的第二旋轉軸周圍旋轉之清洗工具旋轉機構部240d;使筆型海綿2401在上下方向移動之上下移動機構部240e;及使筆型海綿2401在水平方向回轉移動之搖動移動機構部240f。上下移動機構部240e及搖動移動機構部240f發揮使筆型海綿2401與晶圓W之被清洗面的相對位置移動之清洗工具移動機構部的功能。The substrate cleaning unit 240 is provided with: a cleaning tool rotation mechanism unit 240d that rotates the pen-type sponge 2401 around a second rotation axis perpendicular to the surface to be cleaned of the wafer W; and an up-and-down movement mechanism unit that moves the pen-type sponge 2401 in the up-and-down direction. 240e; and a swing movement mechanism part 240f that rotates the pen-shaped sponge 2401 in the horizontal direction. The vertical movement mechanism part 240e and the swing movement mechanism part 240f function as a cleaning tool movement mechanism part that moves the relative position of the pen sponge 2401 and the surface of the wafer W to be cleaned.

清洗工具清洗部243配置於不與晶圓W干擾之位置,且具備:可貯存及排出清洗工具清洗流體之清洗工具清洗槽243e;收容於清洗工具清洗槽243e,並按壓筆型海綿2401之清洗工具清洗板243f;調節供給至清洗工具清洗槽243e之清洗工具清洗流體的流量及壓力之流量調節部243g;及在筆型海綿2401之內側流通,調節從筆型海綿2401之外表面排出外部的清洗工具清洗流體之流量及壓力的流量調節部243h。The cleaning tool cleaning part 243 is arranged in a position that does not interfere with the wafer W, and has: a cleaning tool cleaning tank 243e that can store and discharge the cleaning tool cleaning fluid; it is accommodated in the cleaning tool cleaning tank 243e and presses the pen-shaped sponge 2401 for cleaning. Tool cleaning plate 243f; a flow regulating portion 243g that regulates the flow rate and pressure of the cleaning tool cleaning fluid supplied to the cleaning tool cleaning tank 243e; and circulates inside the pen-type sponge 2401 to adjust the flow rate discharged from the outer surface of the pen-type sponge 2401. The flow rate adjustment part 243h of the flow rate and pressure of the cleaning fluid of the cleaning tool.

環境檢測器244例如具備:溫度檢測器244a、及濕度檢測器244b。另外,環境檢測器244亦可具備在清洗處理中或清洗處理前後可拍攝晶圓W及筆型海綿2401之表面等的攝影機(影像檢測器)。The environment detector 244 includes, for example, a temperature detector 244a and a humidity detector 244b. In addition, the environment detector 244 may also be equipped with a camera (image detector) that can photograph the surface of the wafer W and the pen sponge 2401 during or before and after the cleaning process.

第一及第二筆型海綿清洗部24C、24D之二次清洗處理,係晶圓W在藉由基板保持機構部241c保持狀態下藉由基板旋轉機構部241d來旋轉。而後,在從清洗流體供給噴嘴242a供給基板清洗流體至晶圓W之被清洗面的狀態下,藉由清洗工具旋轉機構部240d而在軸心周圍旋轉之筆型海綿2401,藉由與晶圓W之被清洗面滑動接觸來清洗晶圓W。然後,基板清洗部240係使筆型海綿2401移動至清洗工具清洗槽243e,例如使筆型海綿2401旋轉,或按壓於清洗工具清洗板243f,並藉由流量調節部243h將清洗工具清洗流體供給至筆型海綿2401來清洗筆型海綿2401。In the secondary cleaning process of the first and second pen-type sponge cleaning units 24C and 24D, the wafer W is rotated by the substrate rotating mechanism unit 241d while being held by the substrate holding mechanism unit 241c. Then, in a state where the substrate cleaning fluid is supplied from the cleaning fluid supply nozzle 242a to the surface to be cleaned of the wafer W, the pen-shaped sponge 2401 rotates around the axis by the cleaning tool rotation mechanism part 240d, and interacts with the wafer W. The surface to be cleaned of W is in sliding contact to clean the wafer W. Then, the substrate cleaning part 240 moves the pen-shaped sponge 2401 to the cleaning tool cleaning tank 243e, for example, rotates the pen-shaped sponge 2401 or presses the cleaning tool cleaning plate 243f, and supplies the cleaning tool cleaning fluid through the flow regulating part 243h. to the pen-type sponge 2401 to clean the pen-type sponge 2401.

圖6係顯示第一及第二乾燥部24E、24F之一例的立體圖。第一及第二乾燥部24E、24F之基本構成及功能相同。FIG. 6 is a perspective view showing an example of the first and second drying sections 24E and 24F. The first and second drying sections 24E and 24F have the same basic structure and function.

第一及第二乾燥部24E、24F分別具備:保持晶圓W之基板保持部241;對晶圓W供給基板乾燥流體之乾燥流體供給部245;及量測進行乾燥處理之機架20的內部空間狀態之環境檢測器244。The first and second drying sections 24E and 24F each include a substrate holding section 241 that holds the wafer W; a drying fluid supply section 245 that supplies a substrate drying fluid to the wafer W; and a measurement and drying process inside the rack 20 . Space state environment detector 244.

基板保持部241具備:保持晶圓W側緣部之複數個部位的基板保持機構部241e;及使晶圓W在與晶圓W之被清洗面垂直的第三旋轉軸周圍旋轉之基板旋轉機構部241g。基板保持機構部241e係以將一端對在上下方向移動之上下移動機構部241f以水平軸為中心而轉動的方式設置,並將另一端形成可對晶圓W之周緣部接觸、離開的夾盤等之握持部。基板保持機構部241e構成隨著上下移動機構部241f向上下方向移動,握持部對晶圓W抵接或在分離方向移動之傘機構。另外,握持部亦可由滾子構成。The substrate holding portion 241 includes a substrate holding mechanism portion 241e that holds a plurality of side edge portions of the wafer W; and a substrate rotating mechanism that rotates the wafer W around a third rotation axis perpendicular to the surface of the wafer W to be cleaned. Part 241g. The substrate holding mechanism part 241e is provided such that one end of the up-and-down moving mechanism part 241f is rotated around a horizontal axis, and the other end is formed into a chuck that can contact and separate from the peripheral edge of the wafer W. Wait for the grip. The substrate holding mechanism part 241e constitutes an umbrella mechanism in which the holding part comes into contact with the wafer W or moves in the separation direction as the vertical movement mechanism part 241f moves in the vertical direction. In addition, the holding portion may also be composed of rollers.

乾燥流體供給部245具備:對晶圓W之被清洗面供給基板乾燥流體之乾燥流體供給噴嘴245a;使乾燥流體供給噴嘴245a在上下方向移動之上下移動機構部245b;使乾燥流體供給噴嘴245a在水平方向回轉移動之搖動移動機構部245c;調節基板乾燥流體之流量及壓力的流量調節部245d;及調節基板乾燥流體之溫度的調溫機構部245e。乾燥流體供給噴嘴245a構成基板處理流體供給部。上下移動機構部245b及搖動移動機構部245c發揮使乾燥流體供給噴嘴245a與晶圓W之被清洗面的相對位置移動之乾燥流體供給噴嘴移動機構部的功能。The drying fluid supply unit 245 includes a drying fluid supply nozzle 245a that supplies a substrate drying fluid to the surface of the wafer W to be cleaned; a vertical movement mechanism unit 245b that moves the drying fluid supply nozzle 245a in the vertical direction; and a vertical movement mechanism unit 245b that moves the drying fluid supply nozzle 245a in the vertical direction. The rocking movement mechanism part 245c rotates in the horizontal direction; the flow rate adjustment part 245d adjusts the flow rate and pressure of the substrate drying fluid; and the temperature adjustment mechanism part 245e adjusts the temperature of the substrate drying fluid. The drying fluid supply nozzle 245a constitutes a substrate processing fluid supply unit. The vertical movement mechanism part 245b and the swing movement mechanism part 245c function as a dry fluid supply nozzle moving mechanism part that moves the relative position of the dry fluid supply nozzle 245a and the surface of the wafer W to be cleaned.

基板乾燥流體例如係IPA蒸氣及純水(沖洗液),乾燥流體供給噴嘴245a如圖6所示,亦可分別設置IPA蒸氣用之噴嘴、與純水用之噴嘴。此外,基板乾燥流體亦可係液體,亦可係混合液體及氣體之雙流體,亦可係包含如乾冰之固體者。The substrate drying fluid is, for example, IPA vapor and pure water (rinsing liquid). The drying fluid supply nozzle 245a is shown in FIG. 6 . A nozzle for IPA vapor and a nozzle for pure water may also be provided separately. In addition, the substrate drying fluid can also be a liquid, a two-fluid mixture of liquid and gas, or a solid such as dry ice.

環境檢測器244例如具備:溫度檢測器244a、及濕度檢測器244b。另外,環境檢測器244亦可具備在乾燥處理中或乾燥處理前後可拍攝晶圓W之表面等的攝影機(影像檢測器)。The environment detector 244 includes, for example, a temperature detector 244a and a humidity detector 244b. In addition, the environment detector 244 may be equipped with a camera (image detector) that can photograph the surface of the wafer W during the drying process or before and after the drying process.

第一及第二乾燥部24E、24F執行之乾燥處理,係晶圓W在藉由基板保持機構部241e保持的狀態下藉由基板旋轉機構部241g旋轉。而後,在從乾燥流體供給噴嘴245a對晶圓W之被清洗面供給基板乾燥流體狀態下,乾燥流體供給噴嘴245a移動至晶圓W之側緣部側(徑方向外側)。然後,晶圓W藉由基板旋轉機構部241d高速旋轉來乾燥晶圓W。In the drying process performed by the first and second drying units 24E and 24F, the wafer W is rotated by the substrate rotating mechanism unit 241g while being held by the substrate holding mechanism unit 241e. Then, while the substrate drying fluid is supplied from the drying fluid supply nozzle 245a to the surface to be cleaned of the wafer W, the drying fluid supply nozzle 245a moves to the side edge side (radially outer side) of the wafer W. Then, the wafer W is rotated at high speed by the substrate rotation mechanism unit 241d, thereby drying the wafer W.

另外,圖4至圖6係省略基板保持機構部241a、241c、241e、基板旋轉機構部241b、241d、241g、上下移動機構部240b、240e、241f、242b、245b、直線移動機構部240c、搖動移動機構部240f、242c、245c、清洗工具旋轉機構部240a、240d之具體構成,不過,例如係藉由適當組合馬達、空氣汽缸等用於產生驅動力之模組;直線導軌、滾珠螺桿、齒輪、皮帶、耦合器、軸承等驅動力傳遞機構;與線性檢測器、編碼器檢測器、限位檢測器、轉矩檢測器等檢測器而構成。In addition, FIGS. 4 to 6 omit the substrate holding mechanism portions 241a, 241c, and 241e, the substrate rotation mechanism portions 241b, 241d, and 241g, the vertical movement mechanism portions 240b, 240e, 241f, 242b, and 245b, the linear movement mechanism portion 240c, and the swing mechanism portion. The specific structure of the moving mechanism parts 240f, 242c, 245c and the cleaning tool rotation mechanism parts 240a and 240d is, for example, a module for generating driving force by appropriately combining a motor, an air cylinder, etc.; a linear guide rail, a ball screw, and a gear. , belts, couplers, bearings and other driving force transmission mechanisms; and linear detectors, encoder detectors, limit detectors, torque detectors and other detectors.

此外,圖4至圖6係省略流量調節部243c、243d、243g、243h、245d之具體構成,不過,例如係藉由適當組合泵浦、閥門、調節器等用於調節流體之模組;與流量檢測器、壓力檢測器、液面檢測器等檢測器而構成。圖4至圖6係省略調溫機構部242d、245e之具體構成,不過,例如係適當組合加熱器、熱交換器等用於調節溫度(接觸式或非接觸式)之模組;與溫度檢測器、電流檢測器等檢測器而構成。 (膜厚量測單元) In addition, Figures 4 to 6 omit the specific structure of the flow adjustment portions 243c, 243d, 243g, 243h, and 245d. However, for example, they are modules for regulating fluids by appropriately combining pumps, valves, regulators, etc.; and It is composed of flow detector, pressure detector, liquid level detector and other detectors. Figures 4 to 6 omit the specific structure of the temperature control mechanism portions 242d and 245e. However, for example, a module for adjusting the temperature (contact or non-contact) such as a heater and a heat exchanger is appropriately combined; and temperature detection. It is composed of detectors such as detectors and current detectors. (Film thickness measurement unit)

膜厚量測單元25係量測研磨處理前或研磨處理後之晶圓W的膜厚之量測器,且例如由光學式膜厚量測器、渦電流式膜厚量測器等而構成。對各膜厚量測模組交接晶圓W係藉由搬送機器人211來進行。 (基板處理流體供給閥) The film thickness measuring unit 25 is a measuring device for measuring the film thickness of the wafer W before or after the polishing process, and is composed of, for example, an optical film thickness measuring device, an eddy current type film thickness measuring device, etc. . The transfer of wafer W to each film thickness measurement module is performed by a transfer robot 211 . (Substrate processing fluid supply valve)

圖7係顯示基板處理流體供給閥在基板處理流體供給系統中之配置圖。另外,圖7省略了槽、泵浦、馬達等。FIG. 7 is a diagram showing the arrangement of the substrate processing fluid supply valve in the substrate processing fluid supply system. In addition, the tank, pump, motor, etc. are omitted in FIG. 7 .

研磨流體供給系統27從研磨流體供給源270供給研磨流體至研磨流體供給噴嘴222。在研磨流體供給系統27中,將1個第一研磨流體供給閥271配置於在1個研磨流體供給源270之下游的全部基板處理裝置2之上游,將1個第二研磨流體供給閥272配置於在1個基板處理裝置2之下游的全部研磨單元22之上游,將1個第三研磨流體供給閥273配置於在1個研磨單元22之下游的全部研磨流體供給噴嘴222之上游。The grinding fluid supply system 27 supplies grinding fluid from the grinding fluid supply source 270 to the grinding fluid supply nozzle 222 . In the polishing fluid supply system 27, one first polishing fluid supply valve 271 is arranged upstream of all substrate processing apparatuses 2 downstream of one polishing fluid supply source 270, and one second polishing fluid supply valve 272 is arranged A third polishing fluid supply valve 273 is disposed upstream of all polishing fluid supply nozzles 222 downstream of one polishing unit 22 and upstream of all polishing units 22 downstream of one substrate processing apparatus 2 .

研磨流體供給系統27中,研磨流體從研磨流體供給源270通過第一研磨流體供給閥271而供給至1個或複數個基板處理裝置2,並通過第二研磨流體供給閥272而供給至1個或複數個研磨單元22,又通過第三研磨流體供給閥273供給至1個或複數個研磨流體噴嘴222,並從研磨流體噴嘴222吐出。In the polishing fluid supply system 27 , the polishing fluid is supplied from the polishing fluid supply source 270 to one or a plurality of substrate processing apparatuses 2 through the first polishing fluid supply valve 271 , and is supplied to one or more substrate processing apparatuses 2 through the second polishing fluid supply valve 272 . Or a plurality of grinding units 22 are supplied to one or a plurality of grinding fluid nozzles 222 through the third grinding fluid supply valve 273, and are discharged from the grinding fluid nozzles 222.

清洗流體供給系統28從清洗流體供給源280供給清洗流體至清洗流體供給噴嘴242a。清洗流體供給系統28中,將1個第一清洗流體供給閥281配置於在1個清洗流體供給源280之下游的全部基板處理裝置2之上游,將1個第二清洗流體供給閥282配置於在1個基板處理裝置2之下游的全部清洗單元24A~24D之上游,並將1個第三清洗流體供給閥283配置於在1個清洗單元24A~24D之下游的全部清洗流體供給噴嘴242a之上游。The cleaning fluid supply system 28 supplies cleaning fluid from the cleaning fluid supply source 280 to the cleaning fluid supply nozzle 242a. In the cleaning fluid supply system 28, one first cleaning fluid supply valve 281 is arranged upstream of all substrate processing apparatuses 2 downstream of one cleaning fluid supply source 280, and one second cleaning fluid supply valve 282 is arranged downstream of one cleaning fluid supply source 280. A third cleaning fluid supply valve 283 is disposed between all cleaning fluid supply nozzles 242a downstream of one cleaning unit 24A to 24D and upstream of all cleaning units 24A to 24D of one substrate processing apparatus 2 . upstream.

清洗流體供給系統28中,清洗流體從清洗流體供給源280通過第一清洗流體供給閥281而供給至1個或複數個基板處理裝置2,並通過第二清洗流體供給閥282供給至1個或複數個清洗單元24A~24D,又通過第三清洗流體供給閥283供給至1個或複數個清洗流體供給噴嘴242a,並從清洗流體噴嘴242a吐出。In the cleaning fluid supply system 28, the cleaning fluid is supplied from the cleaning fluid supply source 280 to one or a plurality of substrate processing apparatuses 2 through the first cleaning fluid supply valve 281, and is supplied to one or more substrate processing apparatuses 2 through the second cleaning fluid supply valve 282. The plurality of cleaning units 24A to 24D are supplied to one or a plurality of cleaning fluid supply nozzles 242a through the third cleaning fluid supply valve 283, and are discharged from the cleaning fluid nozzle 242a.

乾燥流體供給系統29從乾燥流體供給源290供給乾燥流體至乾燥流體供給噴嘴245a。乾燥流體供給系統29中,將1個第一乾燥流體供給閥291配置於在1個乾燥流體供給源290之下游的全部基板處理裝置2之上游,並將1個第二乾燥流體供給閥292配置於在1個基板處理裝置2之下游的全部乾燥單元24E、24F的上游,又將1個第三乾燥流體供給閥293配置於在1個乾燥單元24E、24F之下游的全部乾燥流體供給噴嘴245a之上游。The drying fluid supply system 29 supplies drying fluid from the drying fluid supply source 290 to the drying fluid supply nozzle 245a. In the drying fluid supply system 29, one first drying fluid supply valve 291 is arranged upstream of all substrate processing apparatuses 2 downstream of one drying fluid supply source 290, and one second drying fluid supply valve 292 is arranged. A third drying fluid supply valve 293 is disposed in all drying fluid supply nozzles 245a downstream of one drying unit 24E, 24F and upstream of all drying units 24E and 24F downstream of one substrate processing apparatus 2. Upstream.

乾燥流體供給系統29中,乾燥流體從乾燥流體供給源290通過第一乾燥流體供給閥291供給至1個或複數個基板處理裝置2,並通過第二乾燥流體供給閥292供給至1個或複數個乾燥單元24E、24F,又通過第三乾燥流體供給閥293供給至1個或複數個乾燥流體供給噴嘴245a,並從乾燥流體噴嘴245a吐出。 (控制單元) In the drying fluid supply system 29, the drying fluid is supplied from the drying fluid supply source 290 to one or a plurality of substrate processing apparatuses 2 through the first drying fluid supply valve 291, and is supplied to one or a plurality of substrate processing apparatuses 2 through the second drying fluid supply valve 292. The drying units 24E and 24F are supplied to one or a plurality of drying fluid supply nozzles 245a through the third drying fluid supply valve 293, and are discharged from the drying fluid nozzles 245a. (control unit)

圖8係顯示基板處理裝置2之一例的方塊圖。控制單元26與各單元21~25電性連接,並作為統括控制各單元21~25之控制部而發揮功能。以下,以加工單元24之控制系統(模組、檢測器、定序器)為例作說明,不過,因為其他單元21~23、25之基本構成及功能亦相同,所以省略說明。FIG. 8 is a block diagram showing an example of the substrate processing apparatus 2. The control unit 26 is electrically connected to each unit 21 to 25, and functions as a control unit that collectively controls each unit 21 to 25. The following description takes the control system (module, detector, sequencer) of the processing unit 24 as an example. However, since the basic structures and functions of the other units 21 to 23 and 25 are also the same, the description is omitted.

加工單元24具備:分別配置於加工單元24具備之各子單元(例如,第一及第二滾筒海綿清洗部24A、24B、第一及第二筆型海綿清洗部24C、24D、第一及第二乾燥部24E、24F、第一及第二搬送部24G、24H等),而成為控制對象之複數個模組2471~247r;分別配置於複數個模組2471~247r,檢測控制各模組2471~247r所需之資料(檢測值)的複數個檢測器2481~248s;及依據各檢測器2481~248s之檢測值控制各模組2471~247r的動作之定序器249。The processing unit 24 is provided with: each sub-unit provided in the processing unit 24 (for example, the first and second roller sponge cleaning parts 24A and 24B, the first and second pen-type sponge cleaning parts 24C and 24D, the first and second roller sponge cleaning parts 24C and 24D, etc.). the two drying parts 24E, 24F, the first and second conveying parts 24G, 24H, etc.), and become the plurality of modules 2471~247r that are the control objects; they are respectively arranged in the plurality of modules 2471~247r, and detect and control each module 2471 A plurality of detectors 2481~248s that provide the data (detection values) required by ~247r; and a sequencer 249 that controls the actions of each module 2471~247r based on the detection values of each detector 2481~248s.

加工單元24之檢測器2481~248s中,例如在圖7所示之基板處理流體供給系統中包含:檢測從清洗流體供給噴嘴242a或乾燥流體供給噴嘴245a供給至晶圓W之基板處理流體的供給流量之檢測器;及檢測從清洗流體供給噴嘴242a或乾燥流體供給噴嘴245a供給至晶圓W之基板處理流體的供給壓力之檢測器;在對清洗流體供給噴嘴242a或乾燥流體供給噴嘴245a供給流體之供給系統中,包含檢測調整連接於清洗流體供給噴嘴242a或乾燥流體供給噴嘴245a之上游的基板處理流體之流量的清洗流體供給閥281~283或乾燥流體供給閥291~293之狀態的檢測器;在對清洗流體供給噴嘴242a或乾燥流體供給噴嘴245a供給流體之供給系統中,包含調整連接於清洗流體供給噴嘴242a或乾燥流體供給噴嘴245a之上游的基板處理流體之流量的清洗流體供給閥281~283或乾燥流體供給閥291~293的一次側壓力之檢測器等。The detectors 2481 to 248s of the processing unit 24 include, for example, detection of the supply of the substrate processing fluid to the wafer W from the cleaning fluid supply nozzle 242a or the drying fluid supply nozzle 245a in the substrate processing fluid supply system shown in FIG. 7 a detector for flow rate; and a detector for detecting the supply pressure of the substrate processing fluid supplied from the cleaning fluid supply nozzle 242a or the drying fluid supply nozzle 245a to the wafer W; supplying the fluid to the cleaning fluid supply nozzle 242a or the drying fluid supply nozzle 245a The supply system includes a detector that detects the status of the cleaning fluid supply valves 281 to 283 or the drying fluid supply valves 291 to 293 that adjust the flow rate of the substrate processing fluid connected upstream of the cleaning fluid supply nozzle 242a or the drying fluid supply nozzle 245a. ; The supply system that supplies fluid to the cleaning fluid supply nozzle 242a or the drying fluid supply nozzle 245a includes a cleaning fluid supply valve 281 that adjusts the flow rate of the substrate processing fluid connected upstream of the cleaning fluid supply nozzle 242a or the drying fluid supply nozzle 245a. ~283 or a primary side pressure detector of the dry fluid supply valves 291~293, etc.

控制單元26具備:控制部260、通信部261、輸入部262、輸出部263、及記憶部264。控制單元26例如由通用或專用電腦(參照後述之圖9)而構成。The control unit 26 includes a control unit 260, a communication unit 261, an input unit 262, an output unit 263, and a storage unit 264. The control unit 26 is composed of, for example, a general-purpose or special-purpose computer (see FIG. 9 to be described later).

通信部261連接於網路7,作為傳送接收各種資料之通信介面而發揮功能。輸入部262受理各種輸入操作,並且輸出部263經由顯示畫面、信號塔亮燈、蜂鳴器鳴叫輸出各種資訊,作為使用者介面而發揮功能。The communication unit 261 is connected to the network 7 and functions as a communication interface for transmitting and receiving various data. The input unit 262 accepts various input operations, and the output unit 263 outputs various information via a display screen, signal tower lighting, and buzzer sound, and functions as a user interface.

記憶部264記憶基板處理裝置2動作時使用之各種程式(作業系統(OS)、應用程式、網頁瀏覽器等)及資料(裝置設定資訊265、基板處理方案資訊266等)。裝置設定資訊265及基板處理方案資訊266係經由顯示畫面而可藉由使用者編輯的資料。The memory unit 264 stores various programs (operating system (OS), application programs, web browsers, etc.) and data (device setting information 265, substrate processing plan information 266, etc.) used when the substrate processing device 2 operates. The device setting information 265 and the substrate processing solution information 266 are data editable by the user through the display screen.

控制部260經由複數個定序器219、229、239、249、259(以下,稱「定序器群」),而取得複數個檢測器2181~218q、2281~228s、2381~238u、2481~248w、2581~258y(以下,稱「檢測器群」)之檢測值,並且藉由使複數個模組2171~217p、2271~227r、2371~237t、2471~247v、2571~257x(以下,稱「模組群」)配合動作,來進行裝載、研磨、清洗、乾燥、膜厚量測、卸載等一連串之基板處理。 (各裝置之硬體構成) The control unit 260 acquires the plurality of detectors 2181 to 218q, 2281 to 228s, 2381 to 238u, and 2481~ via the plurality of sequencers 219, 229, 239, 249, and 259 (hereinafter referred to as "sequencer group"). 248w, 2581~258y (hereinafter, referred to as "detector group"), and by using a plurality of modules 2171~217p, 2271~227r, 2371~237t, 2471~247v, 2571~257x (hereinafter, referred to as "Module Group") cooperates with the actions to perform a series of substrate processing such as loading, grinding, cleaning, drying, film thickness measurement, and unloading. (Hardware composition of each device)

圖9係顯示電腦900之一例的硬體構成圖。基板處理裝置2之控制單元26、資料庫裝置3、機械學習裝置4、資訊處理裝置5、及使用者終端裝置6分別藉由通用或專用電腦900而構成。FIG. 9 is a hardware configuration diagram showing an example of a computer 900. The control unit 26 of the substrate processing device 2, the database device 3, the machine learning device 4, the information processing device 5, and the user terminal device 6 are each configured by a general-purpose or special-purpose computer 900.

電腦900如圖9所示,其主要構成元件具備:匯流排910、處理器912、記憶體914、輸入裝置916、輸出裝置917、顯示裝置918、存儲裝置920、通信I/F(介面)部922、外部設備I/F部924、I/O(輸入輸出)裝置I/F部926、及媒體輸入輸出部928。另外,上述構成元件亦可依使用電腦900之用途而適當省略。As shown in Figure 9, the computer 900 has the following main components: a bus 910, a processor 912, a memory 914, an input device 916, an output device 917, a display device 918, a storage device 920, and a communication I/F (interface) unit. 922. External device I/F unit 924, I/O (input and output) device I/F unit 926, and media input and output unit 928. In addition, the above-mentioned components may be appropriately omitted depending on the purpose of using the computer 900 .

處理器912由1個或複數個運算處理裝置(CPU(中央處理單元(Central Processing Unit))、MPU(微處理單元(Micro-processing unit))、DSP(數位信號處理器(digital signal processor))、GPU(圖形處理單元(Graphics Processing Unit))等)構成,並作為統括整個電腦900之控制部而動作。記憶體914記憶各種資料及程式930,例如由發揮主記憶體功能之揮發性記憶體(DRAM、SRAM等)、與非揮發性記憶體(ROM)、快閃記憶體等而構成。The processor 912 consists of one or a plurality of arithmetic processing devices (CPU (Central Processing Unit), MPU (Micro-processing unit), DSP (Digital Signal Processor)) , GPU (Graphics Processing Unit), etc.) and operates as a control unit that oversees the entire computer 900 . The memory 914 stores various data and programs 930, and is composed of, for example, a volatile memory (DRAM, SRAM, etc.) that functions as a main memory, a non-volatile memory (ROM), a flash memory, etc.

輸入裝置916例如由鍵盤、滑鼠、數字鍵、電子筆等構成,而發揮輸入部之功能。輸出裝置917例如由語音(聲音)輸出裝置、振動裝置等構成,而發揮輸出部之功能。顯示裝置918例如由液晶顯示器、有機EL顯示器、電子紙張、投影機等構成,而發揮顯示部之功能。輸入裝置916及顯示裝置918如觸控面板顯示器亦可一體地構成。存儲裝置920例如由HDD、SSD(固態硬碟(Solid State Drive))等構成,而發揮記憶部之功能。存儲裝置920記憶作業系統及程式930執行時需要的各種資料。The input device 916 is composed of, for example, a keyboard, a mouse, a numeric keypad, an electronic pen, etc., and functions as an input unit. The output device 917 is composed of, for example, a voice (sound) output device, a vibration device, or the like, and functions as an output unit. The display device 918 is composed of, for example, a liquid crystal display, an organic EL display, electronic paper, a projector, etc., and functions as a display unit. The input device 916 and the display device 918 such as a touch panel display may also be formed integrally. The storage device 920 is composed of, for example, an HDD, an SSD (Solid State Drive), or the like, and functions as a memory unit. The storage device 920 stores various data required for the execution of the operating system and the program 930.

通信I/F部922藉由有線或無線而連接於網際網路及企業網路等網路940(亦可與圖1之網路7相同),並按照指定之通信規格而發揮在與其他電腦之間進行資料之傳送、接收的通信部之功能。外部設備I/F部924藉由有線或無線而連接於攝影機、列印機、掃描機、讀寫器等外部設備950,並按照指定之通信規格發揮與外部設備950之間進行資料之傳送接收的通信部之功能。I/O裝置I/F部926連接於各種檢測器、致動器等之I/O裝置960,並發揮在與I/O裝置960之間例如進行檢測器之檢測信號及對致動器之控制信號等各種信號及資料的傳送、接收之通信部的功能。媒體輸入輸出部928例如由數位光碟機(DVD drive)、光碟機(CD drive)等驅動裝置而構成,並對DVD、CD等之媒體(永久性記憶媒體)970進行資料的讀寫。The communication I/F unit 922 is connected to a network 940 such as the Internet and a corporate network through wired or wireless connections (it may also be the same as the network 7 in FIG. 1 ), and functions with other computers according to designated communication specifications. The function of the communication department that transmits and receives data between. The external device I/F unit 924 is connected to external devices 950 such as cameras, printers, scanners, and readers/writers via wires or wirelessly, and transmits and receives data with the external devices 950 according to designated communication specifications. functions of the Communications Department. The I/O device I/F portion 926 is connected to the I/O device 960 of various detectors, actuators, etc., and functions between the I/O device 960 and the I/O device 960, such as detecting signals from the detectors and communicating with the actuators. The function of the communication unit is to control the transmission and reception of various signals and data such as signals. The media input/output unit 928 is composed of a drive device such as a digital disc drive (DVD drive) or a compact disc drive (CD drive), and reads and writes data from a medium (non-volatile storage medium) 970 such as a DVD or CD.

具有上述構成之電腦900中,處理器912呼叫記憶於存儲裝置920之程式930至記憶體914來執行,並經由匯流排910控制電腦900之各部。另外,程式930亦可取代存儲裝置920而記憶於記憶體914。程式930亦可以可安裝之檔案形式或可執行之檔案形式記錄於媒體970,並經由媒體輸入輸出部928而提供至電腦900。程式930亦可經由通信I/F部922,並藉由經由網路940下載而提供至電腦900。此外,電腦900例如亦可係以FPGA(可程式化閘陣列)、ASIC(特殊用途積體電路)等硬體實現藉由處理器912執行程式930而實現之各種功能者。In the computer 900 having the above structure, the processor 912 calls the program 930 stored in the storage device 920 to the memory 914 for execution, and controls various parts of the computer 900 through the bus 910 . In addition, the program 930 can also be stored in the memory 914 instead of the storage device 920 . The program 930 may also be recorded in the media 970 in an installable file format or an executable file format, and provided to the computer 900 through the media input and output unit 928 . The program 930 can also be provided to the computer 900 via the communication I/F unit 922 and by downloading via the network 940. In addition, the computer 900 may also use hardware such as FPGA (Programmable Gate Array) or ASIC (Special Application Integrated Circuit) to implement various functions implemented by the processor 912 executing the program 930.

電腦900例如係由固定型電腦或攜帶型電腦構成之任意形態的電子設備。電腦900亦可係客戶端型電腦,亦可係伺服器型電腦或雲端型電腦。電腦900亦可適用於各裝置2~6以外之裝置。 (生產履歷資訊30) The computer 900 is, for example, any form of electronic device including a fixed computer or a portable computer. The computer 900 can also be a client computer, a server computer or a cloud computer. The computer 900 can also be applied to devices other than each device 2 to 6. (Production history information 30)

圖10係顯示藉由資料庫裝置3管理之生產履歷資訊30的一例之資料構成圖。生產履歷資訊30作為將進行用於本生產之基板處理時取得的報告R加以分類而登錄的表格,例如具備:關於各晶圓W之晶圓履歷表300;及關於包含研磨處理及加工處理之基板處理流體的供給中之裝置狀態資訊的基板處理流體供給履歷表301。另外,基板處理流體供給履歷表301包含關於供給基板處理流體中之裝置狀態資訊的基板處理流體供給履歷表。此外,生產履歷資訊30除了上述之外,還具備:關於事件資訊之事件履歷表、及關於操作資訊之操作履歷表等,不過省略詳細之說明。FIG. 10 is a data structure diagram showing an example of production history information 30 managed by the database device 3 . The production history information 30 is a table registered as a table that classifies the reports R obtained when processing the substrate used for this production, and includes, for example: a wafer history table 300 for each wafer W; and a table including polishing processing and processing. The substrate processing fluid supply history table 301 is the device status information in which the substrate processing fluid is being supplied. In addition, the substrate processing fluid supply history table 301 includes a substrate processing fluid supply history table regarding device status information in supplying the substrate processing fluid. In addition, in addition to the above, the production history information 30 also includes an event history table regarding event information, an operation history table regarding operation information, etc., but detailed explanations are omitted.

晶圓履歷表300之各記錄中,例如登錄晶圓ID、匣盒編號、批號、各工序之開始時刻、結束時刻、使用單元ID等。另外,圖10係例示研磨工序、清洗工序、乾燥工序,不過,就其他工序亦同樣地登錄。In each record of the wafer history table 300, for example, the wafer ID, cassette number, lot number, start time and end time of each process, usage unit ID, etc. are registered. In addition, FIG. 10 illustrates the grinding process, the cleaning process, and the drying process, but other processes are also registered in the same manner.

基板處理流體供給履歷表301之各記錄中,例如登錄:晶圓ID;從基板處理流體供給部222、242a、245a供給之基板處理流體的供給流量資訊;從基板處理流體供給部222、242a、245a供給之基板處理流體的供給壓力資訊;調整基板處理流體之流量的基板處理流體供給閥271~273、281~283、291~293之開度等的狀態資訊;及調整基板處理流體之流量的基板處理流體供給閥271~273、281~283、291~293之一次側壓力資訊等。In each record of the substrate processing fluid supply history table 301, for example, the following are registered: wafer ID; supply flow rate information of the substrate processing fluid supplied from the substrate processing fluid supply units 222, 242a, and 245a; Supply pressure information of the substrate processing fluid supplied by 245a; status information of the opening degrees of the substrate processing fluid supply valves 271 to 273, 281 to 283, 291 to 293 that adjust the flow rate of the substrate processing fluid; and adjustment of the flow rate of the substrate processing fluid. Primary side pressure information of substrate processing fluid supply valves 271 to 273, 281 to 283, 291 to 293, etc.

基板處理流體供給流量資訊係顯示在流體供給處理中從基板處理流體供給部222、242a、245a供給之基板處理流體的流量之資訊。基板處理流體供給流量資訊係計測從研磨處理中之研磨流體供給噴嘴222、清洗處理中之清洗流體供給噴嘴242a、或乾燥處理中之乾燥處理乾燥流體供給噴嘴245a供給至晶圓W的基板處理流體之供給流量的檢測器之檢測值等。The substrate processing fluid supply flow rate information is information showing the flow rate of the substrate processing fluid supplied from the substrate processing fluid supply units 222, 242a, and 245a during the fluid supply process. The substrate processing fluid supply flow rate information measures the substrate processing fluid supplied to the wafer W from the polishing fluid supply nozzle 222 during the polishing process, the cleaning fluid supply nozzle 242a during the cleaning process, or the drying fluid supply nozzle 245a during the drying process. The detection value of the detector supplying flow, etc.

基板處理流體供給壓力資訊係顯示在流體供給處理中從基板處理流體供給部222、242a、245a供給之基板處理流體的壓力之資訊。基板處理流體供給壓力資訊係計測從研磨處理中之研磨流體供給噴嘴222、清洗處理中之清洗流體供給噴嘴242a、或乾燥處理中之乾燥處理乾燥流體供給噴嘴245a供給至晶圓W的基板處理流體之供給壓力的檢測器之檢測值等。The substrate processing fluid supply pressure information is information showing the pressure of the substrate processing fluid supplied from the substrate processing fluid supply units 222, 242a, and 245a during the fluid supply process. The substrate processing fluid supply pressure information measures the substrate processing fluid supplied to the wafer W from the polishing fluid supply nozzle 222 during the polishing process, the cleaning fluid supply nozzle 242a during the cleaning process, or the drying fluid supply nozzle 245a during the drying process. The detection value of the supply pressure detector, etc.

基板處理流體供給閥狀態資訊係顯示調整基板處理流體之流量的基板處理流體供給閥271~273、281~283、291~293之狀態的資訊。基板處理流體供給閥狀態資訊係在對研磨流體供給噴嘴222、清洗流體供給噴嘴242a、或乾燥流體供給噴嘴245a供給流體之基板處理流體供給系統中,計測連接於研磨流體供給噴嘴222、清洗流體供給噴嘴242a、或乾燥流體供給噴嘴245a之上游,來調整基板處理流體之流量的研磨流體供給閥271~273、清洗流體供給閥281~283、或乾燥流體供給閥291~293之狀態的檢測器之檢測值等。The substrate processing fluid supply valve status information is information showing the status of the substrate processing fluid supply valves 271 to 273, 281 to 283, and 291 to 293 that adjust the flow rate of the substrate processing fluid. The substrate processing fluid supply valve status information is measured in a substrate processing fluid supply system that supplies fluid to the polishing fluid supply nozzle 222, the cleaning fluid supply nozzle 242a, or the drying fluid supply nozzle 245a. The measurement is connected to the polishing fluid supply nozzle 222 and the cleaning fluid supply. Upstream of the nozzle 242a or the dry fluid supply nozzle 245a, one of the detectors for the status of the polishing fluid supply valves 271 to 273, the cleaning fluid supply valves 281 to 283, or the dry fluid supply valves 291 to 293 to adjust the flow rate of the substrate processing fluid. Detection values, etc.

基板處理流體供給閥狀態資訊例如包含顯示基板處理流體供給閥271~273、281~283、291~293之開度的基板處理流體供給閥開度狀態資訊;及顯示基板處理流體供給閥271~273、281~283、291~293之on-off(開啟-斷開)狀態的基板處理供給閥on-off狀態資訊之至少1個。The substrate processing fluid supply valve status information includes, for example, substrate processing fluid supply valve opening status information indicating the openings of the substrate processing fluid supply valves 271 to 273, 281 to 283, and 291 to 293; and substrate processing fluid supply valve opening status information indicating the substrate processing fluid supply valves 271 to 273. , at least one of the on-off state information of the substrate processing supply valve in the on-off (open-off) state of 281 to 283 and 291 to 293.

基板處理流體供給閥一次側壓力資訊係顯示調整基板處理流體之流量的基板處理流體供給閥271~273、281~283、291~293之一次側壓力的資訊。基板處理流體供給閥一次側壓力資訊係在對研磨流體供給噴嘴222、清洗流體供給噴嘴242a或乾燥流體供給噴嘴245a供給流體之基板處理流體供給系統中,量測連接於研磨流體供給噴嘴222、清洗流體供給噴嘴242a或乾燥流體供給噴嘴245a之上游來調整基板處理流體之流量的研磨流體供給閥271~273、清洗流體供給閥281~283或乾燥流體供給閥291~293之一次側壓力的檢測器之檢測值等。The substrate processing fluid supply valve primary side pressure information displays information on the primary side pressure of the substrate processing fluid supply valves 271 to 273, 281 to 283, and 291 to 293 that adjust the flow rate of the substrate processing fluid. The primary side pressure information of the substrate processing fluid supply valve is measured in the substrate processing fluid supply system that supplies fluid to the polishing fluid supply nozzle 222, the cleaning fluid supply nozzle 242a, or the drying fluid supply nozzle 245a. Detectors for the primary side pressure of the polishing fluid supply valves 271 to 273, the cleaning fluid supply valves 281 to 283, or the drying fluid supply valves 291 to 293 upstream of the fluid supply nozzle 242a or the dry fluid supply nozzle 245a to adjust the flow rate of the substrate processing fluid The detection value, etc.

藉由參照基板處理流體供給履歷表301,可抽出各檢測器之時間序列資料(或各模組之時間序列資料),作為對以晶圓ID認定之晶圓W進行基板處理流體之供給時的基板處理裝置2之裝置狀態。 (基板處理流體供給測試資訊31) By referring to the substrate processing fluid supply history table 301, the time series data of each detector (or the time series data of each module) can be extracted as the supply of substrate processing fluid to the wafer W identified by the wafer ID. The device status of the substrate processing device 2. (Substrate processing fluid supply test information 31)

圖11係顯示藉由資料庫裝置3管理之基板處理流體供給測試資訊31的一例之資料構成圖。基板處理流體供給測試資訊31具備將使用用於測試之基板處理流體供給部222、242a、245a及基板處理流體供給測試裝置進行基板處理流體供給測試時取得的報告R及測試結果加以分類並登錄的基板處理流體供給測試表310。FIG. 11 is a data structure diagram showing an example of substrate processing fluid supply test information 31 managed by the database device 3 . The substrate processing fluid supply test information 31 is configured to classify and register the report R and test results obtained when the substrate processing fluid supply test is performed using the substrate processing fluid supply units 222, 242a, 245a for testing and the substrate processing fluid supply test device. Substrate processing fluid supply test table 310.

基板處理流體供給測試表310之各記錄中例如登錄測試ID、基板處理流體供給流量資訊、基板處理流體供給壓力資訊、基板處理流體供給閥狀態資訊、基板處理流體供給閥一次側壓力資訊、測試結果資訊等。基板處理流體供給測試表310之基板處理流體供給流量資訊、基板處理流體供給壓力資訊、基板處理流體供給閥狀態資訊、及基板處理流體供給閥一次側壓力資訊係顯示在基板處理流體供給測試中之各部狀態的資訊,因為其資料構成與基板處理流體供給履歷表301相同,所以省略詳細之說明。Each record in the substrate processing fluid supply test table 310 includes, for example, the registration test ID, substrate processing fluid supply flow rate information, substrate processing fluid supply pressure information, substrate processing fluid supply valve status information, substrate processing fluid supply valve primary side pressure information, and test results. Information, etc. The substrate processing fluid supply flow information, substrate processing fluid supply pressure information, substrate processing fluid supply valve status information, and substrate processing fluid supply valve primary side pressure information of the substrate processing fluid supply test table 310 are displayed in the substrate processing fluid supply test. Since the data structure of the information on the status of each part is the same as that of the substrate processing fluid supply history table 301, detailed description is omitted.

測試結果資訊係顯示在基板處理流體供給測試中進行基板處理流體之供給時的基板處理流體供給位置之資訊。測試結果資訊係使用用於測試之基板處理流體供給部及基板處理流體供給測試裝置,藉由基板處理流體供給位置量測設備以指定時間間隔抽樣的量測值。圖11所示之測試結果資訊包含從開始供給基板處理流體至結束為止之基板處理流體供給期間包含的各時刻t1, t2, …, …tm, …, tn中之基板處理流體供給位置之量測值TR1。The test result information is information showing the substrate processing fluid supply position when supplying the substrate processing fluid in the substrate processing fluid supply test. The test result information is the measurement value sampled at specified time intervals by the substrate processing fluid supply position measurement equipment using the substrate processing fluid supply unit and the substrate processing fluid supply test device used for testing. The test result information shown in Figure 11 includes the measurement of the substrate processing fluid supply position at each time t1, t2, ..., ...tm, ..., tn during the substrate processing fluid supply period from the start to the end of the substrate processing fluid supply. Value TR1.

基板處理流體供給位置之量測,例如只要在預先設定了座標之虛擬研磨台或虛擬晶圓上,從用於測試之基板處理流體供給部供給流體,量測滴下之位置即可。此外,亦可預先決定基準位置,來量測從基準位置之變化程度。To measure the substrate processing fluid supply position, for example, on a virtual polishing table or a virtual wafer with preset coordinates, the fluid is supplied from the substrate processing fluid supply part for testing and the dropped position is measured. In addition, the reference position can also be determined in advance to measure the degree of change from the reference position.

基板處理流體供給部可為基板處理流體在垂直方向落下之垂直滴下型、水平方向射出基板處理流體之水平射出型、或調整角度而設出基板處理流體之角度調整射出型的任何一個。The substrate processing fluid supply unit may be any of a vertical drip type in which the substrate processing fluid falls in a vertical direction, a horizontal injection type in which the substrate processing fluid is ejected in a horizontal direction, or an angle-adjusted injection type in which the substrate processing fluid is ejected by adjusting the angle.

另外,測試結果資訊如上述亦可係藉由基板處理流體供給位置量測設備之量測結果的量測值,亦可係依據藉由搭載於光學式顯微鏡或掃描電子顯微鏡(SEM)之攝影機以指定的時間間隔拍攝基板處理流體供給位置,對其拍攝之各圖像進行圖像處理之圖像處理結果及實驗者所分析的實驗分析結果者。此外,測試結果資訊亦可係連續進行從開始供給基板處理流體至結束為止之1次基板處理流體供給測試所收集者,亦可係藉由逐漸延長指定時刻來反覆進行從開始供給基板處理流體至到達指定時刻的基板處理流體供給測試,經複數次基板處理流體供給測試所收集者。In addition, the test result information as mentioned above can also be based on the measurement result of the substrate processing fluid supply position measurement device, or can also be based on the camera mounted on an optical microscope or a scanning electron microscope (SEM). The substrate processing fluid supply position is photographed at designated time intervals, the image processing results of each of the captured images are processed, and the experimental analysis results are analyzed by the experimenter. In addition, the test result information may be collected by continuously performing one substrate processing fluid supply test from the start to the end of the substrate processing fluid supply, or it may be repeatedly performed by gradually extending the specified time from the start of the substrate processing fluid supply to the end. The substrate processing fluid supply test that reaches the specified time is collected through multiple substrate processing fluid supply tests.

藉由參照基板處理流體供給測試表310,在以測試ID認定之基板處理流體供給測試中,可抽出顯示使用用於測試之基板處理流體供給部進行流體供給處理時的基板處理流體供給位置之時間序列資料(或各模組之時間序列資料)、與顯示當時用於測試之基板處理流體供給部的狀態之時間序列資料。 (機械學習裝置4) By referring to the substrate processing fluid supply test table 310, in the substrate processing fluid supply test identified by the test ID, it is possible to extract the time showing the substrate processing fluid supply position when the substrate processing fluid supply unit for testing is used to perform the fluid supply process. Sequence data (or time series data for each module), and time series data showing the status of the substrate processing fluid supply unit used for testing at that time. (Mechanical learning device 4)

圖12係顯示第一種實施形態之機械學習裝置4的一例之方塊圖。機械學習裝置4具備:控制部40、通信部41、學習用資料記憶部42、及學習完成模型記憶部43。FIG. 12 is a block diagram showing an example of the machine learning device 4 of the first embodiment. The machine learning device 4 includes a control unit 40 , a communication unit 41 , a learning data storage unit 42 , and a learned model storage unit 43 .

控制部40發揮學習用資料取得部400及機械學習部401之功能。通信部41經由網路7而與外部裝置(例如,基板處理裝置2、資料庫裝置3、資訊處理裝置5、及使用者終端裝置6、基板處理流體供給測試裝置(無圖示)等)連接,發揮傳送、接收各種資料之通信介面的功能。The control unit 40 functions as the learning data acquisition unit 400 and the machine learning unit 401. The communication unit 41 is connected to external devices (for example, the substrate processing device 2 , the database device 3 , the information processing device 5 , the user terminal device 6 , a substrate processing fluid supply test device (not shown), etc.) via the network 7 , which functions as a communication interface for transmitting and receiving various data.

學習用資料取得部400經由通信部41及網路7與外部裝置連接,而取得由作為輸入資料之基板處理流體供給資訊、與作為輸出資料之基板處理流體供給位置資訊所構成的第一學習用資料11A。第一學習用資料11A係用作有教師學習中之教師資料(訓練資料)、檢驗資料及測試資料的資料。此外,基板處理流體供給位置資訊係用作有教師學習中之解答標籤的資料。The learning data acquisition unit 400 is connected to an external device via the communication unit 41 and the network 7, and acquires the first learning data composed of substrate processing fluid supply information as input data, and substrate processing fluid supply position information as output data. Information 11A. The first learning data 11A is used to contain teacher data (training data), inspection data and test data for teachers to learn. In addition, the substrate processing fluid supply position information is used as data with answer labels in the teacher's study.

學習用資料記憶部42係複數組記憶學習用資料取得部400所取得之第一學習用資料11A的資料庫。另外,構成學習用資料記憶部42之資料庫的具體構成適當設計即可。The learning material storage unit 42 is a database that stores the first learning materials 11A acquired by the learning material acquisition unit 400 in a plurality of groups. In addition, the specific structure of the database constituting the learning material storage unit 42 may be appropriately designed.

機械學習部401係使用記憶於學習用資料記憶部42之複數組第一學習用資料11A實施機械學習。亦即,機械學習部401藉由在第一學習模型10A中複數組輸入第一學習用資料11A,藉由使第一學習模型10A學習第一學習用資料11A中包含之基板處理流體供給資訊與基板處理流體供給位置資訊的相關關係,而生成學習完成之第一學習模型10A。The machine learning unit 401 performs machine learning using the plurality of sets of first learning materials 11A stored in the learning data storage unit 42 . That is, the machine learning unit 401 inputs the first learning data 11A into the first learning model 10A as a plurality of sets, and causes the first learning model 10A to learn the substrate processing fluid supply information included in the first learning data 11A and The substrate processes the correlation of the fluid supply position information and generates the first learning model 10A upon completion of learning.

學習完成模型記憶部43係記憶藉由機械學習部401所生成之學習完成的第一學習模型10A(具體而言,係調整完成之加權參數群)的資料庫。記憶於學習完成模型記憶部43之學習完成的第一學習模型10A經由網路7及記錄媒體等而提供至真實系統(例如,資訊處理裝置5)。另外,圖12係將學習用資料記憶部42與學習完成模型記憶部43作為各個記憶部而顯示,不過,此等亦可以單一的記憶部而構成。The learned model storage unit 43 is a database that stores the learned first learning model 10A (specifically, the adjusted weighted parameter group) generated by the machine learning unit 401 . The learned first learning model 10A stored in the learned model storage unit 43 is provided to the real system (for example, the information processing device 5 ) via the network 7 , a recording medium, and the like. In addition, FIG. 12 shows the learning data storage unit 42 and the learning completed model storage unit 43 as separate storage units. However, these may be configured as a single storage unit.

另外,記憶於學習完成模型記憶部43之第一學習模型10A的數量不限定於1個,例如機械學習方法、基板處理流體供給部222、242a、245a之種類、基板處理流體供給部222、242a、245a之機構差異、基板處理流體供給資訊中包含之資料的種類、基板處理流體供給位置資訊中包含之資料種類等,亦可記憶條件不同之複數個學習模型。此種情況下,在學習用資料記憶部42中記憶具有分別對應於條件不同之複數個學習模型的資料構成之複數種學習用資料即可。In addition, the number of the first learning models 10A stored in the learning completed model storage unit 43 is not limited to one, for example, the mechanical learning method, the type of the substrate processing fluid supply units 222, 242a, and 245a, and the substrate processing fluid supply units 222 and 242a. , the structural differences of 245a, the types of data included in the substrate processing fluid supply information, the types of data included in the substrate processing fluid supply position information, etc., and multiple learning models with different conditions can also be memorized. In this case, a plurality of types of learning materials each having a data structure corresponding to a plurality of learning models with different conditions may be stored in the learning material storage unit 42 .

圖13係顯示第一學習模型10A及第一學習用資料11A之一例圖。用於第一學習模型10A之機械學習的第一學習用資料11A由基板處理流體供給資訊與基板處理流體供給位置資訊構成。本實施形態之第一學習模型10A及第一學習用資料11A係至少準備對應於使用滾筒海綿2400之滾筒海綿清洗部24A、24B者、對應於使用筆型海綿2401之筆型海綿清洗部24C、24D者、與對應於乾燥部24E、24F者之3種,不過,因為基本之資料構成相同,所以以下一併說明。FIG. 13 is an example diagram showing the first learning model 10A and the first learning material 11A. The first learning data 11A used for machine learning of the first learning model 10A is composed of substrate processing fluid supply information and substrate processing fluid supply position information. The first learning model 10A and the first learning material 11A of this embodiment prepare at least the roller sponge cleaning parts 24A and 24B corresponding to the use of the roller sponge 2400, and the pen-type sponge cleaning parts 24C and 24C corresponding to the use of the pen-type sponge 2401. 24D and the three types corresponding to the drying sections 24E and 24F. However, since the basic data structure is the same, they will be described together below.

構成第一學習用資料11A之基板處理流體供給資訊包含:顯示從基板處理流體供給部222、242a、245a供給之基板處理流體的流量之基板處理流體供給流量資訊;及顯示從基板處理流體供給部222、242a、245a供給之基板處理流體的壓力之基板處理流體供給壓力資訊。The substrate processing fluid supply information constituting the first learning data 11A includes: substrate processing fluid supply flow rate information indicating the flow rate of the substrate processing fluid supplied from the substrate processing fluid supply units 222, 242a, and 245a; and substrate processing fluid supply flow information indicating the flow rate of the substrate processing fluid supply unit 245a. Substrate processing fluid supply pressure information of the pressure of the substrate processing fluid supplied by 222, 242a, and 245a.

基板處理流體供給資訊中包含之基板處理流體供給流量資訊係顯示在供給基板處理流體中從基板處理流體供給部222、242a、245a供給之基板處理流體的流量之資訊。基板處理流體供給流量資訊可為從研磨處理中之研磨流體供給噴嘴222、清洗處理中之清洗流體供給噴嘴242a、或是乾燥處理中之乾燥處理乾燥流體供給噴嘴245a供給至晶圓W的基板處理流體之供給流量。The substrate processing fluid supply flow rate information included in the substrate processing fluid supply information is information indicating the flow rate of the substrate processing fluid supplied from the substrate processing fluid supply units 222, 242a, and 245a in supplying the substrate processing fluid. The substrate processing fluid supply flow information may be the substrate processing supplied to the wafer W from the polishing fluid supply nozzle 222 in the polishing process, the cleaning fluid supply nozzle 242a in the cleaning process, or the drying fluid supply nozzle 245a in the drying process. Fluid supply flow rate.

基板處理流體供給資訊中包含之基板處理流體供給壓力資訊係顯示在供給基板處理流體中從基板處理流體供給部222、242a、245a供給之基板處理流體的壓力之資訊。基板處理流體供給壓力資訊可為從研磨處理中之研磨流體供給噴嘴222、清洗處理中之清洗流體供給噴嘴242a、或乾燥處理中之乾燥處理乾燥流體供給噴嘴245a供給至晶圓W的基板處理流體之供給壓力。The substrate processing fluid supply pressure information included in the substrate processing fluid supply information is information indicating the pressure of the substrate processing fluid supplied from the substrate processing fluid supply units 222, 242a, and 245a in supplying the substrate processing fluid. The substrate processing fluid supply pressure information may be the substrate processing fluid supplied to the wafer W from the polishing fluid supply nozzle 222 in the polishing process, the cleaning fluid supply nozzle 242a in the cleaning process, or the drying fluid supply nozzle 245a in the drying process. supply pressure.

基板處理流體供給資訊中包含之基板處理流體供給閥狀態資訊,係顯示調整基板處理流體之流量的基板處理流體供給閥271~273、281~283、291~293之狀態的資訊。基板處理流體供給閥狀態資訊在對研磨流體供給噴嘴222、清洗流體供給噴嘴242a、或乾燥流體供給噴嘴245a供給流體之基板處理流體供給系統中,可為連接於研磨流體供給噴嘴222、清洗流體供給噴嘴242a、或乾燥流體供給噴嘴245a之上游來調整基板處理流體的流量之研磨流體供給閥271~273、清洗流體供給閥281~283、或乾燥流體供給閥291~293的狀態。The substrate processing fluid supply valve status information included in the substrate processing fluid supply information is information showing the status of the substrate processing fluid supply valves 271 to 273, 281 to 283, and 291 to 293 that adjust the flow rate of the substrate processing fluid. The substrate processing fluid supply valve status information may be connected to the polishing fluid supply nozzle 222, the cleaning fluid supply nozzle 242a, or the drying fluid supply nozzle 245a in the substrate processing fluid supply system. The status of the polishing fluid supply valves 271 to 273, the cleaning fluid supply valves 281 to 283, or the drying fluid supply valves 291 to 293 upstream of the nozzle 242a or the dry fluid supply nozzle 245a to adjust the flow rate of the substrate processing fluid.

另外,基板處理流體供給閥狀態資訊例如可為顯示基板處理流體供給閥271~273、281~283、291~293之開度的基板處理流體供給閥開度狀態資訊;及顯示基板處理流體供給閥271~273、281~283、291~293之on-off狀態的基板處理供給閥on-off狀態資訊之至少1個。In addition, the substrate processing fluid supply valve status information may be, for example, substrate processing fluid supply valve opening status information that displays the openings of the substrate processing fluid supply valves 271 to 273, 281 to 283, and 291 to 293; and substrate processing fluid supply valve display. At least one of the on-off status information of the substrate processing supply valves 271 to 273, 281 to 283, and 291 to 293 is provided.

基板處理流體供給資訊中包含之基板處理流體供給閥一次側壓力資訊,係顯示調整基板處理流體之流量的基板處理流體供給閥271~273、281~283、291~293之一次側壓力的資訊。基板處理流體供給閥一次側壓力資訊在對清洗流體供給噴嘴242a或乾燥流體供給噴嘴245a供給流體之基板處理流體供給系統中,可為連接於清洗流體供給噴嘴242a或乾燥流體供給噴嘴245a之上游來調整基板處理流體的流量之清洗流體供給閥281~283或乾燥流體供給閥291~293的一次側壓力。The substrate processing fluid supply valve primary side pressure information included in the substrate processing fluid supply information is information indicating the primary side pressure of the substrate processing fluid supply valves 271 to 273, 281 to 283, and 291 to 293 that adjust the flow rate of the substrate processing fluid. The substrate processing fluid supply valve primary side pressure information can be obtained from the substrate processing fluid supply system that supplies fluid to the cleaning fluid supply nozzle 242a or the drying fluid supply nozzle 245a, which is connected upstream of the cleaning fluid supply nozzle 242a or the drying fluid supply nozzle 245a. The primary side pressure of the cleaning fluid supply valves 281 to 283 or the drying fluid supply valves 291 to 293 adjusts the flow rate of the substrate processing fluid.

另外,基板處理流體供給資訊亦可為進一步包含顯示進行基板處理流體之供給的空間環境之裝置內環境資訊者,基板處理流體供給資訊中包含之裝置內環境資訊包含藉由機架20所形成之內部空間的溫度、及濕度之至少1個。此外,基板處理流體供給資訊亦可係進一步包含顯示供給基板處理流體之成效的處理成效資訊者,基板處理流體供給資訊中包含之處理成效資訊例如係包含更換基板處理流體供給部222、242a、245a後,使用該基板處理流體供給部222、242a、245a進行基板處理流體之供給時晶圓W的累積使用片數、及累積使用時間的至少1個。In addition, the substrate processing fluid supply information may further include in-device environment information indicating the spatial environment in which the substrate processing fluid is supplied. The in-device environment information included in the substrate processing fluid supply information includes the environment information formed by the rack 20 At least one of the temperature and humidity of the internal space. In addition, the substrate processing fluid supply information may further include processing effect information showing the effect of supplying the substrate processing fluid. The processing effect information included in the substrate processing fluid supply information may include, for example, replacement of the substrate processing fluid supply units 222, 242a, and 245a. Then, at least one of the cumulative number of used wafers W and the cumulative usage time when supplying the substrate processing fluid using the substrate processing fluid supply units 222, 242a, and 245a.

構成第一學習用資料11A之基板處理流體供給位置資訊係顯示依基板處理流體供給資訊顯示之動作狀態而基板處理裝置2動作時從基板處理流體供給部222、242a、245a供給之流體的供給位置之資訊。The substrate processing fluid supply position information constituting the first learning data 11A shows the supply positions of the fluid supplied from the substrate processing fluid supply units 222, 242a, and 245a when the substrate processing apparatus 2 operates according to the operation state displayed by the substrate processing fluid supply information. information.

學習用資料取得部400藉由參照基板處理流體供給測試資訊31,並且必要時受理使用者藉由使用者終端裝置6之輸入操作,而取得第一學習用資料11A。例如學習用資料取得部400藉由參照基板處理流體供給測試資訊31之基板處理流體供給測試表310,而取得進行以測試ID認定之基板處理流體供給測試時的基板處理流體供給流量資訊、基板處理流體供給壓力資訊、基板處理流體供給閥狀態資訊、及基板處理流體供給閥一次側壓力資訊作為基板處理流體供給資訊。The learning data acquisition unit 400 acquires the first learning data 11A by referring to the substrate processing fluid supply test information 31 and accepting the user's input operation through the user terminal device 6 if necessary. For example, the learning data acquisition unit 400 refers to the substrate processing fluid supply test table 310 of the substrate processing fluid supply test information 31 to obtain the substrate processing fluid supply flow rate information and the substrate processing when performing the substrate processing fluid supply test identified by the test ID. The fluid supply pressure information, the substrate processing fluid supply valve status information, and the substrate processing fluid supply valve primary side pressure information are used as the substrate processing fluid supply information.

另外,本實施形態係說明取得基板處理流體供給資訊作為如圖13所示之檢測器群的時間序列資料之情況,不過,亦可依基板處理流體供給部222、242a、245a之構成來適當變更。此外,基板處理流體供給資訊亦可使用對模組之指令值,亦可使用從檢測器之檢測值或對模組之指令值換算的參數,亦可使用依據複數個檢測器之檢測值算出的參數。再者,基板處理流體供給資訊亦可作為基板處理流體之整個供給期間的時間序列資料來取得,亦可作為基板處理流體之供給期間的一部分之對象期間的時間序列資料來取得,亦可作為在特定對象時間之時間資料來取得。如上述,變更基板處理流體供給資訊之定義情況下,只須適當變更第一學習模型10A及第一學習用資料11A中之輸入資料的資料構成即可。In addition, this embodiment describes the case where the substrate processing fluid supply information is obtained as time-series data of the detector group as shown in FIG. 13. However, it may be appropriately changed depending on the configuration of the substrate processing fluid supply units 222, 242a, and 245a. . In addition, the substrate processing fluid supply information can also use the command value of the module, can also use parameters converted from the detection value of the detector or the command value of the module, or can also use the detection value of a plurality of detectors. parameters. Furthermore, the substrate processing fluid supply information may be obtained as time series data for the entire supply period of the substrate processing fluid, may be obtained as time series data for a target period that is part of the supply period of the substrate processing fluid, or may be obtained as time series data for the entire supply period of the substrate processing fluid. To obtain the time data of a specific object time. As described above, when changing the definition of the substrate processing fluid supply information, it is only necessary to appropriately change the data structure of the input data in the first learning model 10A and the first learning data 11A.

此外,學習用資料取得部400藉由參照基板處理流體供給測試資訊31之基板處理流體供給測試表310,取得進行以相同測試ID認定之基板處理流體供給測試時的測試結果資訊(基板處理流體供給位置量測設備之時間序列資料(圖11)),作為對上述基板處理流體供給資訊之基板處理流體供給位置資訊。基板處理流體供給位置量測設備係可對基板處理流體供給部222、242a、245a面性量測的量測設備情況下,學習用資料取得部400取得面性量測值作為基板處理流體供給位置資訊。In addition, the learning data acquisition unit 400 obtains test result information (substrate processing fluid supply) when a substrate processing fluid supply test identified with the same test ID is performed by referring to the substrate processing fluid supply test table 310 of the substrate processing fluid supply test information 31 The time series data of the position measuring device (Fig. 11)) serves as the substrate processing fluid supply position information for the above substrate processing fluid supply information. When the substrate processing fluid supply position measuring device is a measuring device capable of measuring the surface properties of the substrate processing fluid supply parts 222, 242a, and 245a, the learning data acquisition unit 400 obtains the surface properties measurement value as the substrate processing fluid supply position. information.

另外,本實施形態係就基板處理流體供給位置資訊係圖13所示之情況作說明,不過亦可係包含從用於測試之基板處理流體供給部供給流體至預先設定了座標之虛擬研磨台或虛擬晶圓的位置者。此外,基板處理流體供給位置資訊亦可藉由將基板處理流體供給位置量測設備之量測值帶入指定的計算公式而算出。再者,基板處理流體供給資訊例如作為整個基板處理流體供給期間之時間序列資料或基板處理流體供給期間之一部分的對象期間之時間序列資料而取得情況下,基板處理流體供給位置資訊亦可作為整個基板處理流體供給期間之時間序列資料或對象期間之時間序列資料而取得,亦可作為基板處理流體供給結束時間的時間資料或對象時間之時間資料而取得。此外,基板處理流體供給資訊例如作為在特定之對象時間的時間資料而取得情況下,基板處理流體供給位置資訊亦可作為在其特定之對象時間的時間資料而取得。如上述,變更基板處理流體供給位置資訊之定義情況下,只須適當變更第一學習模型10A及第一學習用資料11A中之輸出資料的資料構成即可。In addition, this embodiment describes the case where the substrate processing fluid supply position information is as shown in FIG. 13 , but it may also include supplying fluid from the substrate processing fluid supply unit for testing to a virtual polishing table with preset coordinates or Virtual wafer positioner. In addition, the substrate processing fluid supply position information can also be calculated by adding the measurement value of the substrate processing fluid supply position measuring device into a specified calculation formula. Furthermore, when the substrate processing fluid supply information is obtained as time series data for the entire substrate processing fluid supply period or as time series data for a target period that is a part of the substrate processing fluid supply period, the substrate processing fluid supply position information may also be obtained as the entire substrate processing fluid supply period. It can be obtained as time series data of the substrate processing fluid supply period or time series data of the target period. It can also be obtained as time data of the substrate processing fluid supply end time or time data of the target time. In addition, when the substrate processing fluid supply information is acquired as time data at a specific target time, for example, the substrate processing fluid supply position information may also be acquired as time data at the specific target time. As described above, when changing the definition of the substrate processing fluid supply position information, it is only necessary to appropriately change the data structure of the output data in the first learning model 10A and the first learning data 11A.

第一學習模型10A例如係採用類神經網路之構造者,且具備:輸入層100、中間層101、及輸出層102。在各層之間鋪設有分別連接各神經元之突觸(無圖示),各突觸中分別對應有權值。由各突觸之權值構成的加權參數群藉由機械學習來調整。The first learning model 10A is constructed using a neural network, for example, and includes an input layer 100, an intermediate layer 101, and an output layer 102. Synapses (not shown) connecting each neuron are laid between each layer, and each synapse corresponds to a weighted value. The weighted parameter group composed of the weights of each synapse is adjusted through machine learning.

輸入層100具有對應於作為輸入資料之基板處理流體供給資訊的數量之神經元,基板處理流體供給資訊之各值分別輸入各神經元。輸出層102具有對應於作為輸出資料之基板處理流體供給位置資訊的數量之神經元,基板處理流體供給位置資訊對基板處理流體供給資訊之預測結果(推論結果)作為輸出資料而輸出。The input layer 100 has a number of neurons corresponding to the substrate processing fluid supply information as input data, and each value of the substrate processing fluid supply information is input to each neuron. The output layer 102 has a number of neurons corresponding to the substrate processing fluid supply position information as output data, and a prediction result (inference result) of the substrate processing fluid supply position information on the substrate processing fluid supply information is output as the output data.

而後,分別比較作為推論結果而輸出至輸出層之各神經元的值、與對應於學習用資料中包含之各個輸出資料的教師資料之值而求出誤差,並實施以其誤差變小之方式調整對應於各突觸之權值的處理(倒傳遞)。Then, the error is obtained by comparing the value of each neuron output to the output layer as the inference result with the value of the teacher data corresponding to each output data included in the learning material, and the method is implemented to reduce the error. Adjust the processing corresponding to the weight of each synapse (backward pass).

反覆指定次數實施上述一連串工序,或滿足了上述誤差比容許值小等之指定的學習結束條件情況下,結束機械學習,而生成學習完成之類神經網路模型(對應於各個突觸之全部權值)。 (機械學習方法) When the above-mentioned series of processes are repeated a specified number of times, or when the specified learning end condition is satisfied such that the above-mentioned error is smaller than the allowable value, the mechanical learning is ended, and a neural network model that has completed learning is generated (corresponding to the ownership of each synapse value). (machine learning method)

圖14係顯示機械學習裝置4實施之機械學習方法的一例之流程圖。FIG. 14 is a flowchart showing an example of the machine learning method implemented by the machine learning device 4.

首先,在步驟S100中,學習用資料取得部400從基板處理流體供給測試資訊31等取得希望數量之第一學習用資料11A,並將該取得之第一學習用資料11A記憶於學習用資料記憶部42,作為用於開始機械學習之事前準備。關於此時準備之第一學習用資料11A的數量,考慮最後獲得之第一學習模型10A要求的推論精度來設定即可。First, in step S100 , the learning data acquisition unit 400 acquires a desired number of first learning data 11A from the substrate processing fluid supply test information 31 and the like, and stores the acquired first learning data 11A in the learning data memory. Part 42 serves as a preliminary preparation for starting machine learning. The number of first learning materials 11A to be prepared at this time may be set in consideration of the inference accuracy required for the finally obtained first learning model 10A.

其次,在步驟S110中,機械學習部401為了開始機械學習而準備學習前之第一學習模型10A。此時準備之學習前的第一學習模型10A由類神經網路模型構成,並將各突觸之權值設定成初始值。Next, in step S110, the machine learning unit 401 prepares the first learning model 10A before learning in order to start machine learning. The first learning model 10A before learning prepared at this time is composed of a neural network-like model, and the weights of each synapse are set to initial values.

其次,在步驟S120中,機械學習部401從記憶於學習用資料記憶部42之複數組第一學習模型10A,例如隨機取得1組第一學習用資料11A。Next, in step S120 , the machine learning unit 401 randomly obtains, for example, one set of first learning materials 11A from the plurality of sets of first learning models 10A stored in the learning data storage unit 42 .

其次,在步驟S130中,機械學習部401將1組第一學習用資料11A中包含之基板處理流體供給資訊(輸入資料)輸入準備之學習前(或學習中)的第一學習模型10A之輸入層100。結果,從第一學習模型10A之輸出層102輸出基板處理流體供給位置資訊(輸出資料)作為推論結果,不過,該輸出資料係藉由學習前(或學習中)之第一學習模型10A而生成者。因而,學習前(或學習中)之狀態係作為推論結果所輸出之輸出資料,顯示與第一學習用資料11A中包含之基板處理流體供給位置資訊(解答標籤)不同的資訊。Next, in step S130 , the machine learning unit 401 inputs the substrate processing fluid supply information (input data) included in one set of first learning data 11A into the prepared input of the first learning model 10A before learning (or during learning). Layer 100. As a result, the substrate processing fluid supply position information (output data) is output from the output layer 102 of the first learning model 10A as the inference result. However, the output data is generated by the first learning model 10A before learning (or during learning). By. Therefore, the state before learning (or during learning) is the output data output as the inference result, and displays information different from the substrate processing fluid supply position information (answer label) included in the first learning data 11A.

其次,在步驟S140中,機械學習部401比較在步驟S120中取得之1組第一學習用資料11A中包含的基板處理流體供給位置資訊(解答標籤)、與在步驟S130中從輸出層作為推論結果而輸出的基板處理流體供給位置資訊(輸出資料),並藉由實施調整各突觸之權值的處理(倒傳遞)來實施機械學習。藉此,機械學習部401使第一學習模型10A學習基板處理流體供給資訊與基板處理流體供給位置資訊之相關關係。Next, in step S140, the machine learning unit 401 compares the substrate processing fluid supply position information (answer label) included in the set of first learning data 11A acquired in step S120 with the inference from the output layer in step S130. The substrate processing fluid output as a result supplies position information (output data), and machine learning is performed by performing processing (backward pass) that adjusts the weight of each synapse. Thereby, the machine learning unit 401 causes the first learning model 10A to learn the correlation between the substrate processing fluid supply information and the substrate processing fluid supply position information.

其次,在步驟S150中,機械學習部401例如依據第一學習用資料11A中包含之基板處理流體供給位置資訊(解答標籤)、與作為推論結果而輸出之狀態資訊(輸出資料)的誤差函數之評估值;及記憶於學習用資料記憶部42內之未學習的第一學習用資料11A之剩餘數量判定是否滿足指定之學習結束條件。Next, in step S150 , the machine learning unit 401 uses, for example, the error function between the substrate processing fluid supply position information (answer label) included in the first learning data 11A and the state information (output data) output as the inference result. The evaluation value; and the remaining number of unlearned first learning materials 11A stored in the learning material storage unit 42 are used to determine whether the specified learning end condition is satisfied.

步驟S150中,機械學習部401判定為不滿足學習結束條件,而繼續進行機械學習時(步驟S150之否(No)),返回步驟S120,對學習中之第一學習模型10A使用未學習之第一學習用資料11A複數次實施步驟S120~S140的工序。另外,在步驟S150中,機械學習部401判斷為滿足學習結束條件,而結束機械學習時(步驟S150之是(Yes)),進入步驟S160。In step S150, when the mechanical learning unit 401 determines that the learning end condition is not satisfied and continues mechanical learning (No in step S150), it returns to step S120 and uses the unlearned first learning model 10A. One learning material 11A performs the steps S120 to S140 a plurality of times. In addition, in step S150 , when the machine learning unit 401 determines that the learning end condition is satisfied and ends the machine learning (Yes in step S150 ), the process proceeds to step S160 .

而後,在步驟S160中,機械學習部401將藉由調整與各突觸相對應之權值所生成的學習完成之第一學習模型10A(調整完成之加權參數群)記憶於學習完成模型記憶部43,並結束圖14所示之一連串機械學習方法。機械學習方法中,步驟S100相當於學習用資料記憶工序,步驟S110~S150相當於機械學習工序,步驟S160相當於學習完成模型記憶工序。Then, in step S160 , the machine learning unit 401 stores the learned first learning model 10A (the adjusted weighted parameter group) generated by adjusting the weights corresponding to each synapse in the learned model memory unit. 43, and ends the series of machine learning methods shown in Figure 14. In the mechanical learning method, step S100 corresponds to the learning data storage process, steps S110 to S150 correspond to the machine learning process, and step S160 corresponds to the learning completion model storage process.

如以上,採用本實施形態之機械學習裝置4及機械學習方法時,可提供可從包含基板處理流體供給流量資訊、基板處理流體供給壓力資訊、基板處理流體供給閥狀態資訊、及基板處理流體供給閥一次側壓力資訊之基板處理流體供給資訊預測(推論)顯示基板處理流體之供給位置的基板處理流體供給位置資訊之第一學習模型10A。 (資訊處理裝置5) As described above, when the machine learning device 4 and the machine learning method of this embodiment are used, it is possible to provide information including substrate processing fluid supply flow rate information, substrate processing fluid supply pressure information, substrate processing fluid supply valve status information, and substrate processing fluid supply information. Prediction (inference) of the substrate processing fluid supply information based on the valve primary side pressure information is the first learning model 10A of the substrate processing fluid supply position information showing the supply position of the substrate processing fluid. (Information processing device 5)

圖15係顯示第一種實施形態之資訊處理裝置5的一例之方塊圖。圖16係顯示第一種實施形態之資訊處理裝置5的一例之功能說明圖。資訊處理裝置5具備:控制部50、通信部51、及學習完成模型記憶部52。FIG. 15 is a block diagram showing an example of the information processing device 5 of the first embodiment. FIG. 16 is a functional explanatory diagram showing an example of the information processing device 5 of the first embodiment. The information processing device 5 includes a control unit 50 , a communication unit 51 , and a learned model storage unit 52 .

控制部50發揮資訊取得部500、狀態預測部501及輸出處理部502之功能。通信部51經由網路7而與外部裝置(例如,基板處理裝置2、資料庫裝置3、機械學習裝置4、及使用者終端裝置6等)連接,而發揮傳送、接收各種資料之通信介面的功能。The control unit 50 functions as an information acquisition unit 500, a state prediction unit 501, and an output processing unit 502. The communication unit 51 is connected to external devices (for example, the substrate processing device 2, the database device 3, the machine learning device 4, the user terminal device 6, etc.) via the network 7, and functions as a communication interface for transmitting and receiving various data. Function.

資訊取得部500經由通信部51及網路7與外部裝置連接,取得包含基板處理流體供給流量資訊、基板處理流體供給壓力資訊、基板處理流體供給閥狀態資訊、及基板處理流體供給閥一次側壓力資訊之基板處理流體供給資訊。The information acquisition unit 500 is connected to an external device via the communication unit 51 and the network 7, and acquires substrate processing fluid supply flow information, substrate processing fluid supply pressure information, substrate processing fluid supply valve status information, and substrate processing fluid supply valve primary side pressure. The information substrate processing fluid supplies the information.

例如,對已經進行過基板處理流體之供給後的晶圓W進行基板處理流體供給位置資訊之「事後預測處理」情況下,資訊取得部500藉由參照生產履歷資訊30之基板處理流體供給履歷表301,取得對該晶圓W進行基板處理流體之供給時的基板處理流體供給流量資訊、基板處理流體供給壓力資訊、基板處理流體供給閥狀態資訊、及基板處理流體供給閥一次側壓力資訊作為基板處理流體供給資訊。For example, when performing "post prediction processing" of substrate processing fluid supply position information on the wafer W that has been supplied with the substrate processing fluid, the information acquisition unit 500 refers to the substrate processing fluid supply history table of the production history information 30 301. Obtain the substrate processing fluid supply flow rate information, the substrate processing fluid supply pressure information, the substrate processing fluid supply valve status information, and the substrate processing fluid supply valve primary side pressure information when supplying the substrate processing fluid to the wafer W as the substrate. Process fluid supply information.

對進行基板處理流體之供給的期間之晶圓W進行基板處理流體供給位置資訊的「實時預測處理」情況下,資訊取得部500藉由從進行該基板處理流體之供給的基板處理裝置2隨時接收關於裝置狀態資訊的報告R,而隨時取得對該晶圓W進行基板處理流體之供給的期間之基板處理流體供給流量資訊、基板處理流體供給壓力資訊、基板處理流體供給閥狀態資訊、及基板處理流體供給閥一次側壓力資訊作為基板處理流體供給資訊。When "real-time prediction processing" of substrate processing fluid supply position information is performed on the wafer W during which the substrate processing fluid is being supplied, the information acquisition unit 500 receives the information at any time from the substrate processing apparatus 2 that supplies the substrate processing fluid. Regarding the report R of the device status information, the substrate processing fluid supply flow rate information, substrate processing fluid supply pressure information, substrate processing fluid supply valve status information, and substrate processing information during the supply of the substrate processing fluid to the wafer W can be obtained at any time The fluid supply valve primary side pressure information is used as the substrate to process the fluid supply information.

對進行基板處理流體之供給前的晶圓W進行基板處理流體供給位置資訊之「事前預測處理」情況下,資訊取得部500從預定進行該基板處理流體之供給的基板處理裝置2接收基板處理方案資訊266,並藉由按照該基板處理方案資訊266模擬基板處理裝置2動作時之裝置狀態資訊,取得對該晶圓W進行基板處理流體之供給時的基板處理流體供給流量資訊、基板處理流體供給壓力資訊、基板處理流體供給閥狀態資訊、及基板處理流體供給閥一次側壓力資訊作為基板處理流體供給資訊。When performing "advance prediction processing" of substrate processing fluid supply position information on the wafer W before the substrate processing fluid is supplied, the information acquisition unit 500 receives the substrate processing plan from the substrate processing apparatus 2 scheduled to supply the substrate processing fluid. information 266, and by simulating the device status information when the substrate processing device 2 operates according to the substrate processing plan information 266, the substrate processing fluid supply flow rate information and the substrate processing fluid supply when supplying the substrate processing fluid to the wafer W are obtained. The pressure information, the substrate processing fluid supply valve status information, and the substrate processing fluid supply valve primary side pressure information are used as the substrate processing fluid supply information.

狀態預測部501如上述,藉由將藉由資訊取得部500取得之基板處理流體供給資訊作為輸入資料而輸入第一學習模型10A,來預測顯示基板處理裝置2以該基板處理流體供給資訊顯示之狀態而動作時的基板處理流體供給部222、242a、245a之狀態的基板處理流體供給位置資訊。As described above, the state prediction unit 501 inputs the substrate processing fluid supply information acquired by the information acquisition unit 500 as input data into the first learning model 10A, thereby predicting and displaying the substrate processing fluid supply information displayed by the substrate processing apparatus 2 The substrate processing fluid supply position information of the status of the substrate processing fluid supply units 222, 242a, and 245a when the substrate processing fluid supply units 222, 242a, and 245a are operating.

學習完成模型記憶部52係記憶狀態預測部501使用之學習完成的第一學習模型10A之資料庫。另外,記憶於學習完成模型記憶部52之第一學習模型10A數量不限定於1個,例如,機械學習之方法、基板處理流體供給部222、242a、245a之種類、基板處理流體供給部222、242a、245a之機構差異、基板處理流體供給資訊中包含之資料種類、基板處理流體供給位置資訊中包含之資料種類等,亦可記憶條件不同之複數個學習完成模型,並選擇性利用。學習完成模型記憶部52亦可由外部電腦(例如,伺服器型電腦及雲端型電腦)之記憶部來代用,此種情況下,狀態預測部501只須存取該外部電腦即可。The learned model storage unit 52 is a database that stores the learned first learning model 10A used by the state prediction unit 501 . In addition, the number of the first learning model 10A stored in the learning completed model storage unit 52 is not limited to one. For example, the method of mechanical learning, the types of the substrate processing fluid supply units 222, 242a, and 245a, the substrate processing fluid supply unit 222, Due to the structural differences between 242a and 245a, the types of data included in the substrate processing fluid supply information, the types of data included in the substrate processing fluid supply position information, etc., multiple learning completion models with different conditions can also be memorized and selectively used. The learning completion model memory unit 52 can also be replaced by the memory unit of an external computer (for example, a server computer or a cloud computer). In this case, the state prediction unit 501 only needs to access the external computer.

輸出處理部502係進行用於輸出藉由狀態預測部501所生成之基板處理流體供給位置資訊的輸出處理。例如,輸出處理部502亦可藉由將該基板處理流體供給位置資訊傳送至使用者終端裝置6,而將依據該基板處理流體供給位置資訊之顯示畫面顯示於使用者終端裝置6,亦可藉由將該基板處理流體供給位置資訊傳送至資料庫裝置3,並將該基板處理流體供給位置資訊登錄於生產履歷資訊30。 (資訊處理方法) The output processing unit 502 performs output processing for outputting the substrate processing fluid supply position information generated by the state prediction unit 501 . For example, the output processing unit 502 may also transmit the substrate processing fluid supply position information to the user terminal device 6, and display a display screen based on the substrate processing fluid supply position information on the user terminal device 6, or may use The substrate processing fluid supply position information is transmitted to the database device 3 , and the substrate processing fluid supply position information is registered in the production history information 30 . (Information processing method)

圖17係顯示資訊處理裝置5實施之資訊處理方法的一例之流程圖。以下,係說明關於使用者操作使用者終端裝置6,對特定之晶圓W進行基板處理流體供給位置資訊的「事後預測處理」時之動作例。FIG. 17 is a flowchart showing an example of the information processing method implemented by the information processing device 5 . The following is a description of an operation example when the user operates the user terminal device 6 to perform "post prediction processing" of the substrate processing fluid supply position information on a specific wafer W.

首先,在步驟S200中,使用者對使用者終端裝置6進行輸入認定預測對象之晶圓W的晶圓ID之輸入操作時,使用者終端裝置6將該晶圓ID傳送至資訊處理裝置5。First, in step S200 , when the user inputs the wafer ID of the wafer W to be identified as a prediction target into the user terminal device 6 , the user terminal device 6 transmits the wafer ID to the information processing device 5 .

其次,在步驟S210中,資訊處理裝置5之資訊取得部500接收在步驟S200所傳送之晶圓ID。在步驟S211中,資訊取得部500藉由使用在步驟S210所接收之晶圓ID,參照生產履歷資訊30之流體供給履歷表301,而取得對以該晶圓ID認定之晶圓W進行流體供給處理時的基板處理流體供給資訊。Next, in step S210, the information acquisition unit 500 of the information processing device 5 receives the wafer ID transmitted in step S200. In step S211, the information acquisition unit 500 refers to the fluid supply history table 301 of the production history information 30 using the wafer ID received in step S210, and obtains the fluid supply to the wafer W identified by the wafer ID. Substrate processing fluid supply information during processing.

其次,在步驟S220中,狀態預測部501藉由將在步驟S211取得之基板處理流體供給資訊作為輸入資料而輸入第一學習模型10A,生成對該基板處理流體供給資訊之基板處理流體供給位置資訊作為輸出資料,來預測該基板處理流體供給位置。Next, in step S220, the state prediction unit 501 inputs the substrate processing fluid supply information acquired in step S211 into the first learning model 10A as input data, and generates substrate processing fluid supply position information for the substrate processing fluid supply information. As output data, the substrate processing fluid supply position is predicted.

其次,在步驟S230中,輸出處理部502作為用於輸出在步驟S220所生成之基板處理流體供給位置資訊的輸出處理,而將該基板處理流體供給位置資訊傳送至使用者終端裝置6。另外,基板處理流體供給位置資訊之傳送對象除了使用者終端裝置6之外,亦可為或是取代其之資料庫裝置3。Next, in step S230 , the output processing unit 502 transmits the substrate processing fluid supply position information generated in step S220 to the user terminal device 6 as an output process. In addition, in addition to the user terminal device 6 , the transmission object of the substrate processing fluid supply position information may also be the database device 3 or instead of the user terminal device 6 .

其次,在步驟S240中,使用者終端裝置6作為對於步驟S200之傳送處理的回應,而接收在步驟S230所傳送之基板處理流體供給位置資訊時,藉由依據該基板處理流體供給位置資訊顯示顯示畫面,而藉由使用者認識該基板處理流體供給位置資訊。上述之資訊處理方法中,步驟S210、S211相當於資訊取得工序,步驟S220相當於狀態預測工序,步驟S230相當於輸出處理工序。Next, in step S240, when the user terminal device 6 receives the substrate processing fluid supply position information transmitted in step S230 in response to the transmission process in step S200, it displays the substrate processing fluid supply position information based on the substrate processing fluid supply position information. The user can recognize the substrate processing fluid supply position information through the screen. In the above information processing method, steps S210 and S211 are equivalent to the information acquisition process, step S220 is equivalent to the state prediction process, and step S230 is equivalent to the output processing process.

如以上,採用本實施形態之資訊處理裝置5及資訊處理方法時,由於係藉由將流體供給處理中之包含基板處理流體供給流量資訊、基板處理流體供給壓力資訊、基板處理流體供給閥狀態資訊、及基板處理流體供給閥一次側壓力資訊輸入第一學習模型10A,來預測對該基板處理流體供給資訊之基板處理流體供給位置資訊,因此可依基板處理裝置2之動作狀態適切預測處理流體供給位置。 (第二種實施形態) As mentioned above, when the information processing device 5 and the information processing method of this embodiment are used, the fluid supply process includes the substrate processing fluid supply flow rate information, the substrate processing fluid supply pressure information, and the substrate processing fluid supply valve status information. , and the substrate processing fluid supply valve primary side pressure information is input into the first learning model 10A to predict the substrate processing fluid supply position information for the substrate processing fluid supply information. Therefore, the processing fluid supply can be appropriately predicted according to the operating state of the substrate processing device 2 Location. (Second implementation form)

第二種實施形態與第一種實施形態不同之處為基板處理流體供給位置資訊係顯示基板處理流體供給部222、242a、245a之流體吐出位置及流體吐出方向的基板處理流體供給部位置方向資訊。以下,就第二種實施形態之機械學習裝置4a及資訊處理裝置5a,主要說明與第一種實施形態不同的部分。The difference between the second embodiment and the first embodiment is that the substrate processing fluid supply position information is substrate processing fluid supply part position and direction information that displays the fluid discharge positions and fluid discharge directions of the substrate processing fluid supply parts 222, 242a, and 245a. . Hereinafter, the differences between the machine learning device 4a and the information processing device 5a of the second embodiment and the first embodiment will be mainly explained.

圖18係顯示第二種實施形態之機械學習裝置4a的一例之方塊圖。圖19係顯示第二學習模型10B及第二學習用資料11B之一例圖。第二學習用資料11B用於第二學習模型10B之機械學習。FIG. 18 is a block diagram showing an example of the machine learning device 4a according to the second embodiment. FIG. 19 is an example diagram showing the second learning model 10B and the second learning material 11B. The second learning data 11B is used for machine learning of the second learning model 10B.

構成第二學習用資料11B之基板處理流體供給位置資訊係顯示基板處理流體供給部222、242a、245a之位置及方向的基板處理流體供給部位置方向資訊。基板處理流體供給部222、242a、245a之位置及方向例如以基板處理流體供給部222、242a、245a之立體位置與立體方向來規定。另外,因為構成第二學習用資料11B之基板處理流體供給資訊與第一種實施形態相同,所以省略說明。The substrate processing fluid supply position information constituting the second learning data 11B is substrate processing fluid supply part position and direction information showing the positions and directions of the substrate processing fluid supply parts 222, 242a, and 245a. The positions and directions of the substrate processing fluid supply parts 222, 242a, and 245a are defined, for example, by the three-dimensional positions and three-dimensional directions of the substrate processing fluid supply parts 222, 242a, and 245a. In addition, since the substrate processing fluid supply information constituting the second learning data 11B is the same as that in the first embodiment, description thereof is omitted.

量測基板處理流體之供給位置及供給方向時,例如,在預先設定了立體座標之虛擬空間中,從用於測試之噴嘴等的基板處理流體供給部供給流體,並量測在滴下虛擬研磨台或虛擬晶圓之最佳位置時的供給位置及供給方向即可。基板處理流體之供給位置及供給方向量測流體之吐出位置與吐出方向即可。吐出方向以立體之角度等表示吐出口的中心線方向即可。When measuring the supply position and direction of the substrate processing fluid, for example, in a virtual space with preset three-dimensional coordinates, the fluid is supplied from a substrate processing fluid supply part such as a nozzle for testing, and the drop on the virtual polishing table is measured. Or the supply position and supply direction of the optimal position of the virtual wafer can be used. The supply position and supply direction of the substrate processing fluid can be measured by measuring the discharge position and discharge direction of the fluid. The discharge direction may be expressed in terms of a three-dimensional angle or the like as the direction of the center line of the discharge port.

此外,例如,亦可將吐出口之剖面與中心線交叉的位置作為基準位置,並將吐出口之中心線的方向作為基準方向,來量測從基準位置及基準方向在立體方向的變化程度。In addition, for example, the position where the cross section of the discharge port intersects the center line can be used as the reference position, and the direction of the center line of the discharge port can be used as the reference direction to measure the degree of change in the three-dimensional direction from the reference position and the reference direction.

基板處理流體供給部可為基板處理流體在垂直方向落下之垂直滴下型、在水平方向射出基板處理流體之水平射出型、調整角度而射出基板處理流體之角度調整射出型的任何一個。The substrate processing fluid supply unit may be any of a vertical drip type in which the substrate processing fluid falls in a vertical direction, a horizontal injection type in which the substrate processing fluid is ejected in a horizontal direction, or an angle-adjusted injection type in which the angle is adjusted to eject the substrate processing fluid.

學習用資料取得部400藉由參照基板處理流體供給測試資訊31,並且必要時受理使用者藉由使用者終端裝置6之輸入操作,而取得第二學習用資料11B。在基板處理流體供給測試資訊31中,例如作為基板處理流體供給測試而使用測試用之基板處理流體供給部反覆進行基板處理流體供給處理時,登錄基板處理流體供給部222、242a、245a之吐出口的吐出位置與吐出方向作為測試結果資訊。而後,學習用資料取得部400藉由從基板處理流體供給測試資訊31之基板處理流體供給測試表310取得進行以測試ID認定之基板處理流體供給測試時的測試結果資訊,而取得基板處理流體供給位置資訊。The learning data acquisition unit 400 acquires the second learning data 11B by referring to the substrate processing fluid supply test information 31 and accepting the user's input operation through the user terminal device 6 if necessary. In the substrate processing fluid supply test information 31, for example, when a substrate processing fluid supply unit for testing is used to repeatedly perform a substrate processing fluid supply process as a substrate processing fluid supply test, the discharge ports of the substrate processing fluid supply units 222, 242a, and 245a are registered. The discharge position and discharge direction are used as test result information. Then, the learning data acquisition unit 400 acquires the substrate processing fluid supply by acquiring the test result information when the substrate processing fluid supply test identified by the test ID is performed from the substrate processing fluid supply test table 310 of the substrate processing fluid supply test information 31 Location information.

機械學習部401在第二學習模型10B中輸入複數組第二學習用資料11B,並藉由使第二學習模型10B學習第二學習用資料11B中包含之基板處理流體供給資訊與基板處理流體供給位置資訊的相關關係,而生成學習完成之第二學習模型10B。The machine learning unit 401 inputs a plurality of sets of second learning data 11B into the second learning model 10B, and causes the second learning model 10B to learn the substrate processing fluid supply information and substrate processing fluid supply included in the second learning data 11B. The correlation relationship of the location information is generated to generate a second learning model 10B that has completed learning.

圖20係顯示作為第二種實施形態之資訊處理裝置5a而發揮功能的資訊處理裝置5a之一例的方塊圖。圖21係顯示第二種實施形態之資訊處理裝置5a的一例之功能說明圖。FIG. 20 is a block diagram showing an example of the information processing device 5a functioning as the information processing device 5a of the second embodiment. FIG. 21 is a functional explanatory diagram showing an example of the information processing device 5a according to the second embodiment.

資訊取得部500與第一種實施形態同樣地取得包含基板處理流體供給流量資訊、基板處理流體供給壓力資訊、基板處理流體供給閥狀態資訊、及基板處理流體供給閥一次側壓力資訊之基板處理流體供給資訊。The information acquisition unit 500 acquires the substrate processing fluid including substrate processing fluid supply flow rate information, substrate processing fluid supply pressure information, substrate processing fluid supply valve status information, and substrate processing fluid supply valve primary side pressure information in the same manner as in the first embodiment. Provide information.

狀態預測部501如上述,藉由將藉由資訊取得部500所取得之基板處理流體供給資訊作為輸入資料而輸入第二學習模型10B,來預測基板處理裝置2以該基板處理流體供給資訊顯示之動作狀態而動作時的基板處理流體供給部222、242a、245a之立體位置與立體方向,作為基板處理流體供給位置方向資訊。As described above, the state prediction unit 501 inputs the substrate processing fluid supply information acquired by the information acquisition unit 500 as input data into the second learning model 10B, thereby predicting the state of the substrate processing apparatus 2 displayed based on the substrate processing fluid supply information. The three-dimensional positions and three-dimensional directions of the substrate processing fluid supply units 222, 242a, and 245a when operating in the operating state serve as the substrate processing fluid supply position and direction information.

如以上,採用本實施形態之資訊處理裝置5a及資訊處理方法時,由於係藉由將基板處理流體供給處理中之包含基板處理流體供給流量資訊、基板處理流體供給壓力資訊、基板處理流體供給閥狀態資訊、及基板處理流體供給閥一次側壓力資訊的基板處理流體供給資訊輸入第二學習模型10B,來預測對該基板處理流體供給資訊之基板處理流體供給位置方向資訊,因此可依基板處理裝置2之供給狀態適切預測基板處理流體供給部222、242a、245a之吐出口的位置及方向。 (其他實施形態) As mentioned above, when the information processing device 5a and the information processing method of this embodiment are used, the substrate processing fluid supply process includes the substrate processing fluid supply flow rate information, the substrate processing fluid supply pressure information, and the substrate processing fluid supply valve. The substrate processing fluid supply information of the status information and the substrate processing fluid supply valve primary side pressure information are input to the second learning model 10B to predict the substrate processing fluid supply position and direction information for the substrate processing fluid supply information, so that the substrate processing fluid supply information can be determined according to the substrate processing device 2, the position and direction of the discharge ports of the substrate processing fluid supply parts 222, 242a, and 245a can be appropriately predicted. (Other implementation forms)

本發明並非受上述實施形態約束者,在不脫離本發明之主旨的範圍內可進行各種變更來實施。而此等之全部係包含於本發明之技術思想者。The present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the gist of the present invention. All of these are included in the technical thinking of the present invention.

上述實施形態係說明資料庫裝置3、機械學習裝置4及資訊處理裝置5分別由不同裝置構成,不過,此等3個裝置亦可由單一的裝置構成,亦可此等3個裝置中之任意2個裝置由單一的裝置構成。此外,機械學習裝置4及資訊處理裝置5之至少一方亦可插入基板處理裝置2之控制單元26或是使用者終端裝置6。The above embodiment illustrates that the database device 3, the machine learning device 4 and the information processing device 5 are each composed of different devices. However, these three devices may also be composed of a single device, or any two of these three devices may be used. A device consists of a single device. In addition, at least one of the machine learning device 4 and the information processing device 5 can also be inserted into the control unit 26 of the substrate processing device 2 or the user terminal device 6 .

上述實施形態係說明基板處理裝置2為具備各單元21~25者,不過,基板處理裝置2只要是具備在進行研磨單元22之研磨處理時對晶圓W供給研磨處理流體的功能;進行加工單元24之清洗處理時對晶圓W供給清洗處理流體的功能;及進行加工單元24之乾燥處理時對晶圓W供給處理流體的功能中之至少1個即可,亦可省略其他單元。The above embodiment describes the substrate processing apparatus 2 as having each of the units 21 to 25. However, the substrate processing apparatus 2 only needs to have the function of supplying the polishing fluid to the wafer W during the polishing process of the polishing unit 22; the processing unit At least one of the function of supplying the cleaning fluid to the wafer W during the cleaning process of 24 and the function of supplying the processing fluid to the wafer W during the drying process of the processing unit 24 is sufficient, and the other units may be omitted.

上述實施形態係說明實現藉由機械學習部401之機械學習的學習模型為採用類神經網路之情況,不過亦可採用其他機械學習之模型。其他機械學習之模型,例如舉出:決策樹、迴歸樹等樹木型、裝袋(Bagging)、推升(Boosting)等整合學習、循環型類神經網路、堆疊類神經網路、LSTM等之類神經網型(包含深度學習)、等級型聚類(Clustering)、非等級型聚類、k鄰近法、k平均法等之聚類型、主成分分析、因子分析、邏輯迴歸等之多變量解析、支援向量機等。The above embodiment illustrates the case where the learning model for realizing machine learning by the machine learning unit 401 is a neural network, but other machine learning models may also be used. Other machine learning models include, for example: tree models such as decision trees and regression trees, integrated learning such as bagging and boosting, recurrent neural networks, stacked neural networks, LSTM, etc. Multivariate analysis of clustering types such as neural network type (including deep learning), hierarchical clustering (Clustering), non-hierarchical clustering, k neighbor method, k mean method, etc., principal component analysis, factor analysis, logistic regression, etc. , support vector machine, etc.

上述實施形態之測試結果資訊係顯示在測試裝置中於使用虛擬研磨台或虛擬晶圓的基板處理流體供給測試中進行基板處理流體之供給時的基板處理流體供給位置之資訊,不過亦可作為顯示使用設置了檢測基板處理流體供給部222、242a、245a之狀態的檢測器之實際的研磨單元22及加工單元24進行實際對晶圓W供給基板處理流體時之狀態的資訊而繼續取得。繼續取得之測試結果資訊藉由機械學習裝置4繼續學習。The test result information of the above embodiment is displayed on the substrate processing fluid supply position information when the substrate processing fluid is supplied in the substrate processing fluid supply test using a virtual polishing table or a virtual wafer in the test device, but it can also be used as a display Information on the state when the substrate processing fluid is actually supplied to the wafer W is continuously obtained using the actual polishing unit 22 and the processing unit 24 equipped with detectors for detecting the states of the substrate processing fluid supply units 222, 242a, and 245a. The test result information that continues to be obtained continues to be learned through the machine learning device 4.

此外,測試結果資訊在未設置檢測器之研磨單元22及加工單元24中,亦可由人來判斷基板處理流體供給位置,並對資料附上標籤以便可繼續取得。In addition, in the grinding unit 22 and the processing unit 24 that are not equipped with detectors, the test result information can also be determined by humans at the substrate processing fluid supply position, and the data can be tagged so that it can be continuously obtained.

再者,亦可使用實際的研磨單元22及加工單元24將繼續取得之資訊上載至雲端,由雲端機械學習後,將學習後之模型向基板處理裝置2展開。此外,亦可不上載至雲端,而係在基板處理裝置2內學習處理方法。 (機械學習程式及資訊處理程式) Furthermore, the actual grinding unit 22 and the processing unit 24 can also be used to upload the continuously acquired information to the cloud. After mechanical learning from the cloud, the learned model is deployed to the substrate processing device 2 . In addition, the processing method may be learned in the substrate processing apparatus 2 without uploading to the cloud. (Machine learning programs and information processing programs)

本發明之機械學習裝置4具備的各部亦可以使電腦900發揮功能之程式(機械學習程式);及用於使電腦900執行機械學習方法具備之各工序的程式(機械學習程式)之樣態來提供。此外,本發明之資訊處理裝置5具備的各部亦可以用於使電腦900發揮功能之程式(資訊處理程式);及用於使電腦900執行上述實施形態之資訊處理方法具備的各工序之程式(資訊處理程式)的樣態來提供。 (推論裝置、推論方法及推論程式) Each component of the machine learning device 4 of the present invention can also be in the form of a program (machine learning program) that causes the computer 900 to function; and a program (machine learning program) that causes the computer 900 to execute each process included in the machine learning method. supply. In addition, each component of the information processing device 5 of the present invention can also be used for a program (information processing program) that causes the computer 900 to function; and a program (information processing program) for causing the computer 900 to execute each process of the information processing method of the above embodiment. information processing program). (Inference device, inference method and inference program)

本發明不僅為藉由上述實施形態之資訊處理裝置5(資訊處理方法或資訊處理程式)的樣態者,亦可以為了推論基板處理流體供給位置資訊而使用之推論裝置(推論方法或推論程式)的樣態來提供。此時,推論裝置(推論方法或推論程式)為包含:記憶體、與處理器,其中之處理器可為執行一連串處理者。該所謂一連串處理包含:取得基板處理流體供給資訊之資訊取得處理(資訊取得工序);藉由資訊取得處理而取得基板處理流體供給資訊;及推論顯示基板處理裝置2藉由該基板處理流體供給資訊顯示之基板處理流體供給狀態而動作時的基板處理流體供給位置之基板處理流體供給位置資訊的推論處理(推論工序)。The present invention is not limited to the information processing device 5 (information processing method or information processing program) of the above-described embodiment, but can also be used as an inference device (inference method or inference program) for inferring substrate processing fluid supply position information. Provided in the form of. At this time, the inference device (inference method or inference program) includes: a memory, and a processor, where the processor can be a person who executes a series of processes. This so-called series of processes includes: information acquisition processing (information acquisition process) for acquiring substrate processing fluid supply information; acquisition of substrate processing fluid supply information through the information acquisition processing; and inference display that the substrate processing fluid supply information is used by the substrate processing device 2 An inference process (inference process) for the substrate processing fluid supply position information of the substrate processing fluid supply position when the substrate processing fluid supply state is displayed and operated.

藉由以推論裝置(推論方法或推論程式)之樣態提供,與安裝資訊處理裝置5時比較,可簡單地對各種裝置適用。熟悉本技術之業者當然可理解推論裝置(推論方法或推論程式)推論基板處理流體供給位置資訊時,亦可使用藉由上述實施形態之機械學習裝置4及機械學習方法所生成的學習完成之學習模型,來適用狀態預測部501實施之推論方法。 [產業上之可利用性] By providing it in the form of an inference device (inference method or inference program), it can be applied to various devices more easily than when the information processing device 5 is installed. Those skilled in the art can of course understand that when the inference device (inference method or inference program) infers the substrate processing fluid supply position information, the learning generated by the machine learning device 4 and the machine learning method of the above embodiment can also be used. model to apply the inference method implemented by the state prediction unit 501. [Industrial availability]

本發明可利用於資訊處理裝置、推論裝置、機械學習裝置、資訊處理方法、推論方法、及機械學習方法。The present invention can be used in information processing devices, inference devices, machine learning devices, information processing methods, inference methods, and machine learning methods.

1:基板處理系統 2:基板處理裝置 3:資料庫裝置 4:4a:機械學習裝置 5:5a:資訊處理裝置 6:使用者終端裝置 7:網路 10A:第一學習模型 10B:第二學習模型 11A:第一學習用資料 11B:第二學習用資料 20:機架 21:裝載/卸載單元 22:研磨單元 22A~22D:第一至第四研磨部 23:基板搬送單元 24:加工單元 24A、24B:第一及第二滾筒海綿清洗部 24C、24D:第一及第二筆型海綿清洗部 24E、24F:第一及第二乾燥部 24G、24H:第一及第二搬送部 25:膜厚量測單元 26:控制單元 30:生產履歷資訊 31:基板處理流體供給測試資訊 40:控制部 41:通信部 42:學習用資料記憶部 43:學習完成模型記憶部 50:控制部 51:通信部 52:學習完成模型記憶部 100:輸入層 101:中間層 102:輸出層 200A:第一分隔壁 200B:第二分隔壁 210A~210D:第一至第四前裝載部 211:搬送機器人 212:水平移動機構部 220:研磨台 220a:研磨台軸桿 220b:旋轉移動機構部 220c:調溫機構部 221:頂環 221a:頂環軸桿 221b:支撐軸桿 221c:旋轉移動機構部 221d:上下移動機構部 221e:搖動移動機構部 222:研磨流體供給噴嘴(基板處理流體供給部) 222a:支撐軸桿 222b:搖動移動機構部 222c:流量調節部 222d:調溫機構部 223:修整器 223a:修整器軸桿 223b:支撐軸桿 223c:旋轉移動機構部 223d:上下移動機構部 223e:搖動移動機構部 224:霧化器 224a:支撐軸桿 224b:搖動移動機構部 224c:流量調節部 230A、230B:第一及第二線性傳輸機 231:搖擺傳輸機 232:升降機 233:暫放台 240:基板清洗部 240a:清洗工具旋轉機構部 240b:上下移動機構部 240c:直線移動機構部 241:基板保持部 241a:基板保持機構部 241b:基板旋轉機構部 241c:基板保持機構部 241d:基板旋轉機構部 241e:基板保持機構部 241f:上下移動機構部 241g:基板旋轉機構部 242:清洗流體供給部(基板處理流體供給部) 242a:清洗流體供給噴嘴 242b:搖動移動機構部 242c:流量調節部 242d:調溫機構部 243:清洗工具清洗部 243a:清洗工具清洗槽 243b:清洗工具清洗板 243c:流量調節部 243d:流量調節部 243e:清洗工具清洗槽 243f:清洗工具清洗板 243g:流量調節部 244:環境檢測器 244a:溫度檢測器 244b:濕度檢測器 245:乾燥流體供給部(基板處理流體供給部) 245a:乾燥流體供給噴嘴 245b:上下移動機構部 245c:搖動移動機構部 245d:流量調節部 245e:調溫機構部 246A:第一搬送機器人 246B:第二搬送機器人 2471~247r:模組 2481~248s:檢測器 260:控制部 261:通信部 262:輸入部 263:輸出部 264:記憶部 265:裝置設定資訊 266:基板處理方案資訊 219:229:239:249:259:定序器 271~273:研磨流體供給閥 281~283:清洗流體供給閥 291~293:乾燥流體供給閥 2181~218q:2281~228s:2381~238u:2481~248w:2581~258y:檢測器 2171~217p:2271~227r:2371~237t:2471~247v:2571~257x:模組 300:晶圓履歷表 301:基板處理流體供給履歷表 310:基板處理流體供給測試表 400:學習用資料取得部 401:機械學習部 500:資訊取得部 501:狀態預測部 502:輸出處理部 900:電腦 910:匯流排 912:處理器 914:記憶體 916:輸入裝置 917:輸出裝置 918:顯示裝置 920:存儲裝置 922:通信I/F(介面)部 924:外部設備I/F部 926:I/O(輸入輸出)裝置I/F部 928:媒體輸入輸出部 930:程式 940:網路 950:外部設備 960:I/O裝置 970:媒體 2200:研磨墊 2230:修整盤 2400:滾筒海綿 2401:筆型海綿 TP1~TP7:第一至第七搬送位置 W:晶圓 1:Substrate processing system 2:Substrate processing device 3: Database installation 4:4a: Machine learning device 5:5a:Information processing device 6: User terminal device 7:Internet 10A: First learning model 10B: Second learning model 11A: First learning materials 11B: Second study materials 20:Rack 21:Loading/unloading unit 22:Grinding unit 22A~22D: First to fourth grinding sections 23:Substrate transfer unit 24: Processing unit 24A, 24B: The first and second roller sponge cleaning parts 24C, 24D: The first and second pen-type sponge cleaning parts 24E, 24F: The first and second drying sections 24G, 24H: First and second transport departments 25: Film thickness measurement unit 26:Control unit 30:Production history information 31:Substrate processing fluid supply test information 40:Control Department 41:Ministry of Communications 42: Learning materials memory department 43: Learning to complete the model memory department 50:Control Department 51: Ministry of Communications 52: Learning to complete the model memory department 100:Input layer 101:Middle layer 102:Output layer 200A: First dividing wall 200B: Second dividing wall 210A~210D: The first to fourth front loading parts 211:Transport robot 212: Horizontal moving mechanism department 220:Grinding table 220a: Grinding table shaft 220b: Rotary movement mechanism department 220c: Temperature regulating mechanism department 221:Top ring 221a:Top ring shaft 221b: Support shaft 221c: Rotary movement mechanism department 221d: Up and down movement mechanism part 221e: Shake movement mechanism department 222: Polishing fluid supply nozzle (substrate processing fluid supply part) 222a: Support shaft 222b: Shaking moving mechanism part 222c: Flow adjustment part 222d: Temperature regulating mechanism department 223: Dresser 223a: Dresser shaft 223b:Support shaft 223c: Rotary movement mechanism part 223d: Up and down movement mechanism part 223e: Shake movement mechanism department 224:Atomizer 224a: Support shaft 224b: Shaking moving mechanism part 224c: Flow adjustment part 230A, 230B: first and second linear conveyor 231:Swing conveyor 232: Lift 233: temporarily released 240:Substrate cleaning department 240a: Cleaning tool rotating mechanism part 240b: Up and down movement mechanism part 240c:Linear moving mechanism department 241:Substrate holding part 241a:Substrate holding mechanism part 241b:Substrate rotation mechanism part 241c:Substrate holding mechanism part 241d:Substrate rotation mechanism part 241e:Substrate holding mechanism part 241f: Up and down movement mechanism part 241g:Substrate rotating mechanism part 242: Cleaning fluid supply unit (substrate processing fluid supply unit) 242a: Cleaning fluid supply nozzle 242b: Shaking moving mechanism part 242c: Flow adjustment part 242d: Temperature regulating mechanism department 243: Cleaning tool cleaning department 243a: Cleaning tool cleaning tank 243b: Cleaning tool cleaning plate 243c: Flow adjustment part 243d: Flow adjustment department 243e: Cleaning tool cleaning tank 243f: Cleaning tool cleaning plate 243g: Flow adjustment part 244:Environment detector 244a: Temperature detector 244b: Humidity detector 245: Drying fluid supply unit (substrate processing fluid supply unit) 245a: Drying fluid supply nozzle 245b: Up and down movement mechanism part 245c: Shaking moving mechanism part 245d: Flow adjustment part 245e: Temperature regulating mechanism department 246A:The first transport robot 246B: Second transfer robot 2471~247r:Module 2481~248s: Detector 260:Control Department 261: Ministry of Communications 262:Input part 263:Output Department 264:Memory Department 265:Device setting information 266:Substrate processing solution information 219:229:239:249:259:Sequencer 271~273: Grinding fluid supply valve 281~283: Cleaning fluid supply valve 291~293: Drying fluid supply valve 2181~218q:2281~228s:2381~238u:2481~248w:2581~258y: detector 2171~217p:2271~227r:2371~237t:2471~247v:2571~257x:module 300:Wafer history 301:Substrate processing fluid supply history 310: Substrate Processing Fluid Supply Test Chart 400: Learning materials acquisition department 401: Machine Learning Department 500:Information Acquisition Department 501: Status prediction department 502: Output processing department 900:Computer 910:Bus 912: Processor 914:Memory 916:Input device 917:Output device 918:Display device 920:Storage device 922: Communication I/F (Interface) Department 924: External device I/F part 926: I/O (input and output) device I/F section 928:Media input and output department 930:Program 940:Internet 950:External device 960:I/O device 970:Media 2200: Polishing pad 2230:Trimming disk 2400:Roller sponge 2401: Pen type sponge TP1~TP7: 1st to 7th transfer position W:wafer

圖1係顯示基板處理系統1之一例的整體構成圖。 圖2係顯示基板處理裝置2之一例的俯視圖。 圖3係顯示第一至第四研磨部22A~22D之一例的立體圖。 圖4係顯示第一及第二滾筒海綿清洗部24A、24B之一例的立體圖。 圖5係顯示第一及第二筆型海綿清洗部24C、24D之一例的立體圖。 圖6係顯示第一及第二乾燥部24E、24F之一例的立體圖。 圖7係顯示基板處理流體供給閥在基板處理流體供給系統中之配置圖。 圖8係顯示基板處理裝置2之一例的方塊圖。 圖9係顯示電腦900之一例的硬體構成圖。 圖10係顯示藉由資料庫裝置3管理之生產履歷資訊30的一例之資料構成圖。 圖11係顯示藉由資料庫裝置3管理之加工測試資訊31的一例之資料構成圖。 圖12係顯示第一種實施形態之機械學習裝置4的一例之方塊圖。 圖13係顯示第一學習模型10A及第一學習用資料11A之一例圖。 圖14係顯示機械學習裝置4實施之機械學習方法的一例之流程圖。 圖15係顯示第一種實施形態之資訊處理裝置5的一例之方塊圖。 圖16係顯示第一種實施形態之資訊處理裝置5的一例之功能說明圖。 圖17係顯示資訊處理裝置5實施之資訊處理方法的一例之流程圖。 圖18係顯示第二種實施形態之機械學習裝置4a的一例之方塊圖。 圖19係顯示第二學習模型10B及第二學習用資料11B之一例圖。 圖20係顯示作為第二種實施形態之資訊處理裝置5a而發揮功能的資訊處理裝置5a之一例的方塊圖。 圖21係顯示第二種實施形態之資訊處理裝置5a的一例之功能說明圖。 FIG. 1 is an overall structural diagram showing an example of the substrate processing system 1. FIG. 2 is a top view showing an example of the substrate processing apparatus 2. FIG. 3 is a perspective view showing an example of the first to fourth polishing parts 22A to 22D. FIG. 4 is a perspective view showing an example of the first and second roller sponge cleaning parts 24A and 24B. FIG. 5 is a perspective view showing an example of the first and second pen-type sponge cleaning parts 24C and 24D. FIG. 6 is a perspective view showing an example of the first and second drying sections 24E and 24F. FIG. 7 is a diagram showing the arrangement of the substrate processing fluid supply valve in the substrate processing fluid supply system. FIG. 8 is a block diagram showing an example of the substrate processing apparatus 2. FIG. 9 is a hardware configuration diagram showing an example of a computer 900. FIG. 10 is a data structure diagram showing an example of production history information 30 managed by the database device 3 . FIG. 11 is a data structure diagram showing an example of the processing test information 31 managed by the database device 3. FIG. 12 is a block diagram showing an example of the machine learning device 4 of the first embodiment. FIG. 13 is an example diagram showing the first learning model 10A and the first learning material 11A. FIG. 14 is a flowchart showing an example of the machine learning method implemented by the machine learning device 4. FIG. 15 is a block diagram showing an example of the information processing device 5 of the first embodiment. FIG. 16 is a functional explanatory diagram showing an example of the information processing device 5 of the first embodiment. FIG. 17 is a flowchart showing an example of the information processing method implemented by the information processing device 5 . FIG. 18 is a block diagram showing an example of the machine learning device 4a according to the second embodiment. FIG. 19 is an example diagram showing the second learning model 10B and the second learning material 11B. FIG. 20 is a block diagram showing an example of the information processing device 5a functioning as the information processing device 5a of the second embodiment. FIG. 21 is a functional explanatory diagram showing an example of the information processing device 5a according to the second embodiment.

5:資訊處理裝置 5:Information processing device

10A:第一學習模型 10A: First learning model

500:資訊取得部 500:Information Acquisition Department

501:狀態預測部 501: Status prediction department

Claims (15)

一種資訊處理裝置,係具備: 資訊取得部,其係取得包含在藉由具備對基板供給處理流體之一個或複數個基板處理流體供給部的基板處理裝置進行之前述基板的處理中顯示從前述基板處理流體供給部供給之基板處理流體的供給狀態之基板處理流體供給狀態資訊的基板處理流體供給資訊;及 狀態預測部,其係藉由在藉由機械學習而學習了前述基板處理流體供給資訊、與顯示前述基板處理裝置動作時前述基板處理流體供給部供給之流體的供給位置之基板處理流體供給位置資訊的相關關係之學習模型中,輸入藉由前述資訊取得部所取得之前述基板處理流體供給資訊,來預測對該基板處理流體供給資訊之前述基板處理流體供給位置資訊。 An information processing device having: The information acquisition unit acquires the substrate processing shown in the substrate processing performed by the substrate processing apparatus provided with one or a plurality of substrate processing fluid supply units for supplying processing fluid to the substrate supplied from the substrate processing fluid supply unit. The substrate processing fluid supply status information of the fluid supply status is the substrate processing fluid supply information; and The state prediction unit learns the substrate processing fluid supply information through machine learning and the substrate processing fluid supply position information indicating the supply position of the fluid supplied by the substrate processing fluid supply unit when the substrate processing apparatus operates. In the learning model of the correlation, the substrate processing fluid supply information obtained by the information acquisition unit is input to predict the substrate processing fluid supply position information for the substrate processing fluid supply information. 如請求項1之資訊處理裝置,其中前述基板處理流體供給資訊中包含之基板處理流體供給狀態資訊係包含以下的至少1個: 基板處理流體供給流量資訊,其係顯示從前述基板處理流體供給部供給至前述基板之前述基板處理流體的供給流量;及 基板處理流體供給壓力資訊,其係顯示從前述基板處理流體供給部供給至前述基板之前述基板處理流體的供給壓力。 The information processing device of claim 1, wherein the substrate processing fluid supply status information included in the substrate processing fluid supply information includes at least one of the following: Substrate processing fluid supply flow rate information showing the supply flow rate of the substrate processing fluid before it is supplied from the substrate processing fluid supply part to the substrate; and The substrate processing fluid supply pressure information displays the supply pressure of the substrate processing fluid before it is supplied from the substrate processing fluid supply unit to the substrate. 如請求項1或2之資訊處理裝置,其中前述基板處理流體供給資訊進一步包含基板處理流體供給閥狀態資訊,其係在對前述基板處理流體供給部供給流體之供給系統中,連接於前述基板處理流體供給部之上游,而取得調整前述基板處理流體之流量的基板處理流體供給閥之狀態。The information processing device of claim 1 or 2, wherein the substrate processing fluid supply information further includes substrate processing fluid supply valve status information, which is connected to the substrate processing system in a supply system that supplies fluid to the substrate processing fluid supply unit. Upstream of the fluid supply unit, the state of the substrate processing fluid supply valve that adjusts the flow rate of the substrate processing fluid is obtained. 如請求項3之資訊處理裝置,其中前述基板處理流體供給閥狀態資訊包含以下之至少1個: 基板處理流體供給閥開度狀態資訊,其係顯示前述基板處理流體供給閥之開度;及 基板處理流體供給閥on-off狀態資訊,其係顯示前述基板處理流體供給閥之on-off狀態。 The information processing device of claim 3, wherein the substrate processing fluid supply valve status information includes at least one of the following: Substrate processing fluid supply valve opening status information, which displays the opening of the aforementioned substrate processing fluid supply valve; and The substrate processing fluid supply valve on-off status information displays the on-off status of the substrate processing fluid supply valve. 如請求項1之資訊處理裝置,其中前述基板處理流體供給資訊進一步包含基板處理流體供給閥一次側壓力資訊,其係在對前述基板處理流體供給部供給流體之供給系統中,連接於前述基板處理流體供給部之上游,而取得調整前述基板處理流體之流量的基板處理流體供給閥之一次側壓力。The information processing device of claim 1, wherein the substrate processing fluid supply information further includes substrate processing fluid supply valve primary side pressure information, which is connected to the substrate processing system in a supply system that supplies fluid to the substrate processing fluid supply unit. Upstream of the fluid supply part, the primary side pressure of the substrate processing fluid supply valve that adjusts the flow rate of the substrate processing fluid is obtained. 如請求項3之資訊處理裝置,其中前述基板處理裝置具備1個或複數個單元,此等分別具有1個或複數個前述基板處理流體供給部, 在對前述基板處理流體供給部供給流體之供給系統中,前述基板處理流體供給閥比1個前述單元中之全部前述基板處理流體供給部設置於上游。 The information processing device of claim 3, wherein the substrate processing device has one or a plurality of units, each of which has one or a plurality of the substrate processing fluid supply parts, In the supply system for supplying fluid to the substrate processing fluid supply unit, the substrate processing fluid supply valve is provided upstream of all the substrate processing fluid supply units in one unit. 如請求項3之資訊處理裝置,其中在對前述基板處理流體供給部供給流體之供給系統中,前述基板處理流體供給閥比1個前述基板處理裝置中之全部前述單元設置於上游。The information processing apparatus according to claim 3, wherein in the supply system for supplying fluid to the substrate processing fluid supply unit, the substrate processing fluid supply valve is provided upstream of all the units in the substrate processing apparatus. 如請求項3之資訊處理裝置,其中在設置1個或複數個前述基板處理裝置之基板處理系統中, 在對前述基板處理流體供給部供給流體之供給系統中,前述基板處理流體供給閥比1個前述基板處理系統中之全部前述基板處理裝置設置於上游。 The information processing device of claim 3, wherein in a substrate processing system equipped with one or a plurality of the aforementioned substrate processing devices, In the supply system for supplying fluid to the substrate processing fluid supply unit, the substrate processing fluid supply valve is provided upstream of one of all the substrate processing devices in the substrate processing system. 如請求項1之資訊處理裝置,其中前述基板處理流體供給位置資訊包含以下之至少1個: 設定於前述基板之座標上的位置資訊、及 對預先設定之基準位置的變化程度資訊。 The information processing device of claim 1, wherein the substrate processing fluid supply position information includes at least one of the following: position information set on the coordinates of the aforementioned substrate, and Information on the degree of change of the preset reference position. 如請求項1之資訊處理裝置,其中前述基板處理流體供給位置資訊包含基板處理流體供給部位置方向資訊,其係顯示前述基板處理流體供給部之流體吐出位置及流體吐出方向。The information processing device of claim 1, wherein the substrate processing fluid supply position information includes substrate processing fluid supply part position and direction information, which indicates the fluid discharge position and fluid discharge direction of the substrate processing fluid supply part. 一種推論裝置,係具備:記憶體、與處理器, 前述處理器就具備對基板供給處理流體之1個或複數個基板處理流體供給部的基板處理裝置動作時之動作狀態,係執行: 資訊取得處理,其係取得包含顯示從前述基板處理流體供給部供給之基板處理流體的供給狀態之基板處理流體供給狀態資訊;及 推論處理,其係藉由前述資訊取得處理而取得前述基板處理流體供給資訊時,推論顯示前述基板處理裝置以前述基板處理流體供給資訊顯示之前述基板處理流體的供給狀態處理時之前述基板處理流體供給部供給的流體之供給位置之基板處理流體供給位置資訊。 An inference device having: a memory, and a processor, The above-mentioned processor is in an operating state when a substrate processing apparatus having one or a plurality of substrate processing fluid supply units for supplying processing fluid to a substrate is in operation, and executes: Information acquisition processing for acquiring substrate processing fluid supply status information including a supply status of the substrate processing fluid supplied from the substrate processing fluid supply unit; and An inference process that, when the substrate processing fluid supply information is obtained through the information acquisition process, infers that the substrate processing apparatus displays the supply state of the substrate processing fluid by using the substrate processing fluid supply information to process the substrate processing fluid. The substrate processing fluid supply position information of the supply position of the fluid supplied by the supply unit. 一種機械學習裝置,係具備: 學習用資料記憶部,其係複數組記憶學習用資料,該學習用資料係由在藉由具備對基板供給基板清洗流體之基板處理流體供給部的基板處理裝置進行之前述基板的處理中,包含顯示從前述基板處理流體供給部供給之基板處理流體的供給狀態之基板處理流體供給狀態資訊的基板處理流體供給資訊;及顯示前述基板處理裝置以前述基板處理流體供給資訊顯示之前述基板處理流體的供給狀態而處理時之前述基板處理流體供給部供給的流體之供給位置的基板處理流體供給位置資訊而構成; 機械學習部,其係藉由將複數組前述學習用資料輸入學習模型,而使前述學習模型學習前述基板處理流體供給資訊與前述基板處理流體供給位置資訊之相關關係;及 學習完成模型記憶部,其係記憶藉由前述機械學習部學習了前述相關關係之前述學習模型。 A machine learning device having: A learning data storage unit that stores a plurality of sets of learning data that are processed by a substrate processing apparatus having a substrate processing fluid supply unit that supplies a substrate cleaning fluid to the substrate, including Substrate processing fluid supply information indicating the supply status of the substrate processing fluid supplied from the substrate processing fluid supply unit; and displaying the substrate processing fluid supply information displayed by the substrate processing apparatus using the substrate processing fluid supply information. The substrate processing fluid supply position information of the supply position of the fluid supplied by the aforementioned substrate processing fluid supply unit during processing is configured in the supply state; A mechanical learning unit that causes the learning model to learn the correlation between the substrate processing fluid supply information and the substrate processing fluid supply position information by inputting a plurality of sets of the learning data into the learning model; and The learning completion model memory unit memorizes the aforementioned learning model that learned the aforementioned correlation through the aforementioned mechanical learning unit. 一種資訊處理方法,係具備: 資訊取得工序,其係取得包含在藉由具備對基板供給基板清洗流體之基板處理流體供給部的基板處理裝置進行之前述基板的處理中,顯示從前述基板處理流體供給部供給之基板處理流體的供給狀態之基板處理流體供給狀態資訊的基板處理流體供給資訊;及 狀態預測工序,其係藉由在藉由機械學習而學習了前述基板處理流體供給資訊;與前述基板處理裝置以前述基板處理流體供給資訊顯示之前述基板處理流體的供給狀態而處理時之前述基板處理流體供給部供給的流體之供給位置的基板處理流體供給位置資訊之相關關係的學習模型中,輸入藉由前述資訊取得工序所取得之前述基板處理流體供給資訊,來預測對該基板處理流體供給資訊之基板處理流體供給位置資訊。 An information processing method that has: The information acquisition step is to acquire information indicating the substrate processing fluid supplied from the substrate processing fluid supply unit during processing of the substrate by a substrate processing apparatus having a substrate processing fluid supply unit that supplies a substrate cleaning fluid to the substrate. substrate processing fluid supply information of supply status of substrate processing fluid supply status information; and The state prediction process is performed by learning the substrate processing fluid supply information through machine learning and displaying the substrate processing fluid supply state using the substrate processing fluid supply information with the substrate processing apparatus while processing the substrate. In the learning model of the correlation between the supply position of the fluid supplied by the processing fluid supply unit and the substrate processing fluid supply position information, the substrate processing fluid supply information acquired in the above information acquisition step is input to predict the supply of the substrate processing fluid. Information about substrate processing fluid supply location information. 一種推論方法,係藉由具備:記憶體、與處理器之推論裝置來執行, 前述處理器執行: 資訊取得工序,其係取得包含在藉由具備對基板供給基板清洗流體之基板處理流體供給部的基板處理裝置進行之前述基板的處理中,顯示從前述基板處理流體供給部供給之基板處理流體的供給狀態之基板處理流體供給狀態資訊的基板處理流體供給資訊;及 推論工序,其係藉由前述資訊取得工序而取得前述基板處理流體供給資訊時,推論顯示前述基板處理裝置以前述基板處理流體供給資訊顯示之前述基板處理流體的供給狀態處理時之前述基板處理流體供給部供給的流體之供給位置之基板處理流體供給位置資訊。 An inference method that is executed by an inference device having: a memory and a processor, The aforementioned processor executes: The information acquisition step is to acquire information indicating the substrate processing fluid supplied from the substrate processing fluid supply unit during processing of the substrate by a substrate processing apparatus having a substrate processing fluid supply unit that supplies a substrate cleaning fluid to the substrate. substrate processing fluid supply information of supply status of substrate processing fluid supply status information; and An inference step in which, when the substrate processing fluid supply information is obtained through the information acquisition step, the substrate processing fluid is inferred and displayed when the substrate processing fluid supply information is displayed by the substrate processing fluid supply information, and the substrate processing fluid is processed. The substrate processing fluid supply position information of the supply position of the fluid supplied by the supply unit. 一種機械學習方法,係具備: 學習用資料記憶工序,其係將學習用資料複數組記憶於學習用資料記憶部,該學習用資料係由在藉由具備對基板供給基板清洗流體之清洗流體供給部的基板處理裝置進行之前述基板的處理中,包含顯示從前述基板處理流體供給部供給之基板處理流體的供給狀態之基板處理流體供給狀態資訊的基板處理流體供給資訊;及顯示前述基板處理裝置以前述基板處理流體供給資訊顯示之前述基板處理流體的供給狀態而處理時之前述基板處理流體供給部供給的流體之供給位置的基板處理流體供給位置資訊而構成; 機械學習工序,其係藉由將複數組前述學習用資料輸入學習模型,而使前述學習模型學習前述基板處理流體供給資訊與前述基板處理流體供給位置資訊之相關關係;及 學習完成模型記憶工序,其係將藉由前述機械學習工序學習了前述相關關係之前述學習模型記憶於學習完成模型記憶部。 A machine learning method that has: The learning data storage step is to store a plurality of sets of learning data in a learning data storage unit, and the learning data is performed by a substrate processing device having a cleaning fluid supply unit that supplies a substrate cleaning fluid to the substrate. In the processing of the substrate, the substrate processing fluid supply information includes substrate processing fluid supply status information indicating the supply status of the substrate processing fluid supplied from the substrate processing fluid supply unit; and displaying the substrate processing fluid supply information displayed by the substrate processing device. It is composed of substrate processing fluid supply position information of a supply position of the fluid supplied by the substrate processing fluid supply unit during processing in the supply state of the substrate processing fluid; A mechanical learning process that causes the learning model to learn the correlation between the substrate processing fluid supply information and the substrate processing fluid supply position information by inputting a plurality of sets of the learning data into the learning model; and The learning completion model memory process memorizes the learning model that has learned the aforementioned correlation through the aforementioned mechanical learning process in the learning completion model memory unit.
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