TW202347054A - Pattern forming method and method for manufacturing semiconductor device - Google Patents

Pattern forming method and method for manufacturing semiconductor device Download PDF

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TW202347054A
TW202347054A TW112130831A TW112130831A TW202347054A TW 202347054 A TW202347054 A TW 202347054A TW 112130831 A TW112130831 A TW 112130831A TW 112130831 A TW112130831 A TW 112130831A TW 202347054 A TW202347054 A TW 202347054A
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mass
content
particles
oxide particles
metal component
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TW112130831A
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TWI844447B (en
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上村哲也
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日商富士軟片股份有限公司
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16Coating processes; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/30Imagewise removal using liquid means
    • G03F7/32Liquid compositions therefor, e.g. developers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Materials For Photolithography (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Materials For Medical Uses (AREA)

Abstract

Provided are: a chemical solution which is less susceptible to causing metal residue defects when brought into contact with a silicon substrate or a silicon substrate equipped with a silicon oxide film; and a chemical solution container. This chemical solution is a chemical solution containing an organic solvent and a metal component, wherein the metal component contains titanium oxide particles and titanium ions, and the mass ratio of the titanium oxide particle content with respect to the titanium ion content falls within the range of 100 to 1012, inclusive.

Description

圖案形成方法及半導體元件的製造方法Pattern forming method and semiconductor element manufacturing method

本發明是有關於一種藥液及藥液收容體。The invention relates to a medicinal liquid and a medicinal liquid container.

藉由包含光微影之配線形成步驟製造半導體器件時,作為預濕液、光阻液(光阻膜形成用組成物)、顯影液、沖洗液、剝離液、化學機械研磨(CMP:Chemical Mechanical Polishing)漿料及CMP後的清洗液等或作為該等的稀釋液,可使用含有水和/或有機溶劑之藥液。 近年來,藉由光微影技術的進步,圖案的微細化不斷發展。作為圖案的微細化的方法,嘗試有作為曝光光源使用紫外線、KrF準分子雷射、ArF準分子雷射及EUV(極紫外線)等之圖案形成。 隨著所形成之圖案的微細化,對於該製程中所使用之上述藥液要求進一步的缺陷抑制性。 When manufacturing semiconductor devices through wiring formation steps including photolithography, as prewetting liquid, photoresist liquid (photoresist film forming composition), developer, rinse liquid, stripping liquid, chemical mechanical polishing (CMP: Chemical Mechanical Polishing) slurry and cleaning fluid after CMP, or as a diluent thereof, a chemical solution containing water and/or an organic solvent can be used. In recent years, through the advancement of photolithography technology, the miniaturization of patterns has continued to develop. As a method of pattern miniaturization, pattern formation using ultraviolet, KrF excimer laser, ArF excimer laser, EUV (extreme ultraviolet), etc. as the exposure light source has been attempted. As the pattern to be formed becomes finer, the above-mentioned chemical liquid used in the process is required to have further defect suppression properties.

作為用於以往的圖案形成之藥液,在專利文獻1中揭示了一種“在圖案形成技術中,能夠減少粒子的產生之、化學增幅型光阻膜的圖案形成用有機系處理液之製造方法([0010]段)”。 [先前技術文獻] [專利文獻] As a chemical solution used for conventional pattern formation, Patent Document 1 discloses a "method for producing an organic processing solution for pattern formation of a chemically amplified photoresist film that can reduce the generation of particles in pattern formation technology" ([0010] paragraph)". [Prior technical literature] [Patent Document]

[專利文獻1]日本特開2015-084122號公報[Patent Document 1] Japanese Patent Application Publication No. 2015-084122

另一方面,近年來要求使矽基板或附氧化矽膜的矽基板(表面被氧化矽膜覆蓋之矽基板)與藥液接觸時在矽基板或附氧化矽膜的矽基板上更難以產生金屬殘渣缺陷的藥液。 本發明的課題在於提供一種與矽基板或附氧化矽膜的矽基板接觸時難以產生金屬殘渣缺陷的藥液。 又,本發明的課題亦在於提供一種藥液收容體。 On the other hand, in recent years, there has been a demand to make it more difficult to generate metal on a silicon substrate or a silicon substrate with a silicon oxide film (a silicon substrate whose surface is covered with a silicon oxide film) when it comes into contact with a chemical solution. Residue defective liquid medicine. An object of the present invention is to provide a chemical solution that is less likely to generate metal residue defects when in contact with a silicon substrate or a silicon substrate with a silicon oxide film. Furthermore, another object of the present invention is to provide a medical solution container.

為了解決上述課題,本發明人等進行深入研究之結果,發現了藉由以下結構能夠解決上述課題。In order to solve the above-mentioned problems, the present inventors conducted intensive research and found that the above-mentioned problems can be solved by the following structure.

(1)一種藥液,其含有有機溶劑及金屬成分,其中, 金屬成分含有氧化鈦粒子及鈦離子, 氧化鈦粒子的含量與鈦離子的含量之質量比為10 0~10 12。 (2)如(1)所述之藥液,其中 鈦離子的含量相對於藥液總質量為0.10~100質量ppt。 (3)如(1)或(2)所述之藥液,其中 氧化鈦粒子的含量相對於金屬成分中的鈦成分的含量為5質量%以上且小於99質量%。 (4)如(1)~(3)中任一項所述之藥液,其中 氧化鈦粒子中,作為粒徑0.5~17 nm之粒子的比例為60質量%以上且小於98質量%。 (5)如(1)~(4)中任一項所述之藥液,其中 金屬成分含有鐵離子, 鐵離子的含量相對於藥液總質量為0.10~100質量ppt。 (6)如(1)~(5)中任一項所述之藥液,其中 金屬成分含有氧化鐵粒子, 氧化鐵粒子的含量相對於金屬成分中的鐵成分的含量為5質量%以上且小於99質量%。 (7)如(1)~(6)中任一項所述之藥液,其中 金屬成分含有氧化鐵粒子, 氧化鐵粒子中,作為粒徑0.5~17 nm之粒子的比例為60質量%以上且小於98質量%。 (8)如(1)~(7)中任一項所述之藥液,其中 金屬成分含有氧化鐵粒子及鐵離子, 氧化鐵粒子的含量與鐵離子的含量之質量比為10 0~10 12。 (9)如(1)~(8)中任一項所述之藥液,其中 金屬成分含有鋁離子, 鋁離子的含量相對於藥液總質量為0.10~100質量ppt。 (10)如(1)~(9)中任一項所述之藥液,其中 金屬成分含有氧化鋁粒子, 氧化鋁粒子的含量相對於金屬成分中的鋁成分的含量為5質量%以上且小於99質量%。 (11)如(1)~(10)中任一項所述之藥液,其中 金屬成分含有氧化鋁粒子, 氧化鋁粒子中,作為粒徑0.5~17 nm之粒子的比例為60質量%以上且小於98質量%。 (12)如(1)~(11)中任一項所述之藥液,其中 金屬成分含有氧化鋁粒子及鋁離子, 氧化鋁粒子的含量與鋁離子的含量之質量比為10 0~10 12。 (13)如(1)~(12)中任一項所述之藥液,其中 金屬成分含有氧化銅粒子, 氧化銅粒子的含量相對於金屬成分中的銅成分的含量為5質量%以上且小於99質量%。 (14)如(1)~(13)中任一項所述之藥液,其中 金屬成分含有氧化銅粒子, 氧化銅粒子中,作為粒徑0.5~17 nm之粒子的比例為60質量%以上且小於98質量%。 (15)如(1)~(14)中任一項所述之藥液,其中 金屬成分含有氧化銅粒子及銅離子, 氧化銅粒子的含量與銅離子的含量之質量比為10 0~10 12。 (16)如(1)~(15)中任一項所述之藥液,其還含有有機雜質, 有機雜質的含量相對於藥液總質量為1000~100000質量ppt。 (17)如(1)~(16)中任一項所述之藥液,其中 相對於藥液總質量之水的含量為500質量ppb以下。 (18)如(1)~(17)中任一項所述之藥液,其中 有機溶劑包含選自包括丙二醇單甲醚乙酸酯、丙二醇單甲醚、環己酮、乳酸乙酯、碳酸丙二酯、異丙醇、4-甲基-2-戊醇、乙酸丁酯、丙二醇單乙醚、丙二醇單丙醚、甲氧基丙酸甲酯、環戊酮、γ-丁內酯、二異戊醚、乙酸異戊酯、二甲基亞碸、N-甲基吡咯啶酮、二乙二醇、乙二醇、二丙二醇、丙二醇、碳酸乙二酯、環丁碸、環庚酮、2-庚酮、丁酸丁酯、異丁酸異丁酯、異戊基醚及十一烷之群組中之1種以上。 (19)一種藥液收容體,其含有容器及收容於容器之(1)~(18)中任一項所述之藥液。 [發明效果] (1) A medical solution containing an organic solvent and a metal component, wherein the metal component contains titanium oxide particles and titanium ions, and the mass ratio of the content of titanium oxide particles to the content of titanium ions is 10 0 to 10 12 . (2) The medical solution as described in (1), wherein the content of titanium ions is 0.10 to 100 ppt by mass relative to the total mass of the medical solution. (3) The chemical solution according to (1) or (2), wherein the content of the titanium oxide particles is 5 mass % or more and less than 99 mass % relative to the titanium component in the metal component. (4) The chemical solution according to any one of (1) to (3), wherein the proportion of particles having a particle diameter of 0.5 to 17 nm among the titanium oxide particles is 60 mass % or more and less than 98 mass %. (5) The medical solution according to any one of (1) to (4), wherein the metal component contains iron ions, and the content of iron ions is 0.10 to 100 ppt by mass relative to the total mass of the medical solution. (6) The chemical solution according to any one of (1) to (5), wherein the metal component contains iron oxide particles, and the content of the iron oxide particles is 5 mass % or more relative to the content of the iron component in the metal component, and Less than 99% by mass. (7) The chemical solution according to any one of (1) to (6), wherein the metal component contains iron oxide particles, and the proportion of the iron oxide particles as particles with a particle diameter of 0.5 to 17 nm is 60 mass % or more And less than 98% by mass. (8) The medical solution according to any one of (1) to (7), wherein the metal component contains iron oxide particles and iron ions, and the mass ratio of the iron oxide particle content to the iron ion content is 10 0 to 10 12 . (9) The medical solution according to any one of (1) to (8), wherein the metal component contains aluminum ions, and the content of aluminum ions is 0.10 to 100 ppt by mass relative to the total mass of the medical solution. (10) The chemical solution according to any one of (1) to (9), wherein the metal component contains alumina particles, and the content of the alumina particles is 5 mass % or more relative to the content of the aluminum component in the metal component, and Less than 99% by mass. (11) The chemical solution according to any one of (1) to (10), wherein the metal component contains alumina particles, and the proportion of the alumina particles as particles with a particle diameter of 0.5 to 17 nm is 60 mass % or more And less than 98% by mass. (12) The medical solution according to any one of (1) to (11), wherein the metal component contains alumina particles and aluminum ions, and the mass ratio of the content of alumina particles to the content of aluminum ions is 10 0 to 10 12 . (13) The chemical solution according to any one of (1) to (12), wherein the metal component contains copper oxide particles, and the content of the copper oxide particles is 5 mass % or more relative to the content of the copper component in the metal component, and Less than 99% by mass. (14) The chemical solution according to any one of (1) to (13), wherein the metal component contains copper oxide particles, and the proportion of the copper oxide particles as particles with a particle diameter of 0.5 to 17 nm is 60 mass % or more And less than 98% by mass. (15) The medical solution as described in any one of (1) to (14), wherein the metal component contains copper oxide particles and copper ions, and the mass ratio of the content of copper oxide particles to the content of copper ions is 10 0 to 10 12 . (16) The medical solution according to any one of (1) to (15), which further contains organic impurities, and the content of the organic impurities is 1,000 to 100,000 ppt by mass relative to the total mass of the medical solution. (17) The chemical solution according to any one of (1) to (16), wherein the water content relative to the total mass of the chemical solution is 500 ppb by mass or less. (18) The medicinal solution according to any one of (1) to (17), wherein the organic solvent is selected from the group consisting of propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether, cyclohexanone, ethyl lactate, and carbonic acid. Propylene glycol, isopropyl alcohol, 4-methyl-2-pentanol, butyl acetate, propylene glycol monoethyl ether, propylene glycol monopropyl ether, methyl methoxypropionate, cyclopentanone, γ-butyrolactone, dibutyl acetate Isoamyl ether, isopentyl acetate, dimethyl styrene, N-methylpyrrolidone, diethylene glycol, ethylene glycol, dipropylene glycol, propylene glycol, ethylene carbonate, cyclobutane, cycloheptanone, 2-Heptanone, butyl butyrate, isobutyl isobutyrate, isoamyl ether and undecane. (19) A medical solution container containing a container and the medical solution according to any one of (1) to (18) contained in the container. [Effects of the invention]

依據本發明,能夠提供一種與矽基板或附氧化矽膜的矽基板接觸時難以產生金屬殘渣缺陷的藥液。 又,依據本發明,能夠提供一種藥液收容體。 According to the present invention, it is possible to provide a chemical solution that is less likely to generate metal residue defects when in contact with a silicon substrate or a silicon substrate with a silicon oxide film. Furthermore, according to the present invention, a medical solution container can be provided.

以下,對本發明進行詳細說明。 以下所記載之構成要件的說明有時基於本發明的代表性實施形態來進行,但本發明並不限定於這樣的實施形態。 另外,本說明書中,使用“~”表示之數值範圍係指將“~”前後所記載之數值作為下限值及上限值而包含之範圍。 又,本發明中,“ppm”係指“parts-per-million:百萬分之一(10 -6)”,“ppb”係指“parts-per-billion:十億分之一(10 -9)”,“ppt”係指“parts-per-trillion:一兆分之一(10 -12)”,“ppq”係指“parts-per-quadrillion:千兆分之一(10 -15)”。 又,在本發明中的基團(原子團)的標記中,未標有取代及未取代之標記在不損害本發明的效果之範圍內不僅包含不具有取代基之基團,還包含含有取代基之基團。例如,所謂“烴基”,不僅包含不具有取代基之烴基(未取代烴基),還包含含有取代基之烴基(取代烴基)。關於該方面,對於各化合物亦相同。 又,本發明中的“放射線”例如係指遠紫外線、極紫外線(EUV;Extreme ultraviolet)、X射線或電子束等。又,本發明中“光”係指光化射線或放射線。所謂本發明中的“曝光”,除非另有說明,否則不僅包含利用遠紫外線、X射線或EUV等之曝光,還包含利用電子束或離子束等粒子束之描繪。 Hereinafter, the present invention will be described in detail. The description of the structural elements described below may be based on representative embodiments of the present invention, but the present invention is not limited to such embodiments. In addition, in this specification, the numerical range expressed using "~" means the range including the numerical value described before and after "~" as a lower limit value and an upper limit value. In addition, in the present invention, "ppm" means "parts-per-million: one part per million (10 -6 )", and "ppb" means "parts-per-billion: one part per billion (10 - 9 )", "ppt" refers to "parts-per-trillion: one part per trillion (10 -12 )", "ppq" refers to "parts-per-quadrillion: one part per trillion (10 -15 )"". Furthermore, among the labels for groups (atomic groups) in the present invention, labels indicating unsubstitution and unsubstitution include not only groups without substituents but also groups containing substituents within the scope that does not impair the effects of the present invention. of the group. For example, the term "hydrocarbon group" includes not only a hydrocarbon group having no substituent (unsubstituted hydrocarbon group) but also a hydrocarbon group having a substituent (substituted hydrocarbon group). In this regard, the same applies to each compound. In addition, the "radiation" in the present invention refers to, for example, far ultraviolet rays, extreme ultraviolet (EUV; Extreme ultraviolet), X-rays or electron beams. In addition, "light" in the present invention means actinic rays or radiation. "Exposure" in the present invention includes not only exposure using far ultraviolet rays, X-rays, EUV, etc., but also drawing using particle beams such as electron beams or ion beams, unless otherwise specified.

雖然藉由本發明的藥液來解決上述問題之機制不一定明確,但是對於該機制,本發明人推測如下。另外,以下機制為推測,即使在藉由不同的機制獲得本發明的效果之情況下,亦包含在本發明的範圍內。 本發明人等了解到,藥液含有氧化鈦粒子及鈦離子時,藉由其質量比(氧化鈦粒子的質量/鈦離子的質量),在矽基板或附氧化矽膜的矽基板(以下,將該等亦統稱為“特定基板”)上容易產生金屬殘渣缺陷(來自於金屬成分的殘渣)的程度不同。更具體而言,認為上述質量比過大之情況下,換言之,氧化鈦粒子的比例過高之情況下,來自於氧化鈦粒子的金屬殘渣缺陷容易在特定基板上變多。又,認為上述質量比過小之情況下,換言之,鈦離子的比例過高之情況下,氧化還原反應容易與屬於低於鈦離子的卑金屬的其他金屬離子之間進行,其他金屬的粒子(例如,其他金屬的氧化物粒子)增大,在特定基板上金屬殘渣缺陷容易變多。 Although the mechanism by which the above-mentioned problems are solved by the medicinal solution of the present invention is not necessarily clear, the inventors speculate as follows regarding the mechanism. In addition, the following mechanisms are speculations, and even when the effects of the present invention are obtained by different mechanisms, they are included in the scope of the present invention. The inventors of the present invention have found that when a chemical solution contains titanium oxide particles and titanium ions, based on their mass ratio (mass of titanium oxide particles/mass of titanium ions), on a silicon substrate or a silicon substrate with a silicon oxide film (hereinafter, The degree to which metal residue defects (residues derived from metal components) are likely to occur on these substrates (also collectively referred to as "specific substrates") varies. More specifically, it is considered that when the mass ratio is too large, in other words, when the ratio of titanium oxide particles is too high, metal residue defects derived from titanium oxide particles tend to increase on a specific substrate. Furthermore, it is considered that when the above mass ratio is too small, in other words, when the ratio of titanium ions is too high, redox reactions are likely to proceed with other metal ions belonging to base metals lower than titanium ions, and particles of other metals (such as , oxide particles of other metals) increase, and metal residue defects tend to increase on a specific substrate.

本發明的藥液為含有有機溶劑及金屬成分之藥液,金屬成分含有氧化鈦粒子及鈦離子,氧化鈦粒子的含量與鈦離子的含量之質量比為10 0~10 12。 以下,對本發明的藥液中所包含之成分進行詳細敘述。 The medical solution of the present invention is a medical solution containing an organic solvent and a metal component. The metal component contains titanium oxide particles and titanium ions. The mass ratio of the content of titanium oxide particles to the content of titanium ions is 10 0 to 10 12 . Hereinafter, the components contained in the medicinal solution of the present invention will be described in detail.

<有機溶劑> 本發明的藥液(以下,還簡稱為“藥液”)含有有機溶劑。 在本說明書中,所謂有機溶劑,係指相對於上述藥液的總質量,以超過10000質量ppm之含量含有每1種成分之液態有機化合物。亦即,在本說明書中,相對於上述藥液的總質量,超過10000質量ppm而含有之液態有機化合物相當於有機溶劑。 又,在本說明書中,所謂液態,係指在25℃、大氣壓下為液體。 <Organic solvent> The medical solution of the present invention (hereinafter also simply referred to as "medical solution") contains an organic solvent. In this specification, the organic solvent refers to a liquid organic compound containing each component in a content exceeding 10,000 ppm by mass relative to the total mass of the above-mentioned chemical solution. That is, in this specification, a liquid organic compound contained in an amount exceeding 10,000 ppm by mass relative to the total mass of the chemical solution is equivalent to an organic solvent. In addition, in this specification, the term "liquid state" means a liquid at 25° C. and atmospheric pressure.

作為藥液中的有機溶劑的含量,並無特別限制,但是相對於藥液的總質量,98.0質量%以上為較佳,超過99.0質量%為更佳,99.90質量%以上為進一步較佳,超過99.95質量%為尤佳。上限小於100質量%。 有機溶劑可以單獨使用1種,亦可以使用2種以上。使用2種以上的有機溶劑之情況下,合計含量在上述範圍內為較佳。 The content of the organic solvent in the medicinal solution is not particularly limited, but relative to the total mass of the medicinal solution, it is preferably 98.0 mass % or more, more preferably 99.0 mass % or more, further preferably 99.90 mass % or more, and more than 99.90 mass % is still more preferred. 99.95% by mass is particularly preferred. The upper limit is less than 100% by mass. One type of organic solvent may be used alone, or two or more types may be used. When two or more organic solvents are used, the total content is preferably within the above range.

作為有機溶劑的種類,並無特別限制,能夠使用公知的有機溶劑。關於有機溶劑,例如,可舉出伸烷基二醇單烷基醚羧酸酯、伸烷基二醇單烷基醚、乳酸烷基酯、烷氧基丙酸烷基酯、環狀內酯(較佳為碳數4~10)、可以具有環之單酮化合物(較佳為碳數4~10)、碳酸伸烷酯、烷氧基乙酸烷基酯、丙酮酸烷基酯、二烷基亞碸、環狀碸、二烷基醚、一元醇、乙二醇、乙酸烷基酯、及N-烷基吡咯啶酮等。The type of organic solvent is not particularly limited, and known organic solvents can be used. Examples of the organic solvent include alkylene glycol monoalkyl ether carboxylate, alkylene glycol monoalkyl ether, alkyl lactate, alkyl alkoxy propionate, and cyclic lactone. (preferably having 4 to 10 carbon atoms), monoketone compound which may have a ring (preferably having 4 to 10 carbon atoms), alkylene carbonate, alkyl alkoxyacetate, alkyl pyruvate, dioxane Base terine, cyclic terine, dialkyl ether, monohydric alcohol, ethylene glycol, alkyl acetate, and N-alkyl pyrrolidone, etc.

關於有機溶劑,例如,選自包括丙二醇單甲醚乙酸酯(PGMEA)、丙二醇單甲醚(PGME)、環己酮(CHN)、乳酸乙酯(EL)、碳酸丙二酯(PC)、異丙醇(IPA)、4-甲基-2-戊醇(MIBC)、乙酸丁酯(nBA)、丙二醇單乙醚、丙二醇單丙醚、甲氧基丙酸甲酯、環戊酮、γ-丁內酯、二異戊基醚、乙酸異戊酯、二甲基亞碸、N-甲基吡咯啶酮、二乙二醇、乙二醇、二丙二醇、丙二醇、碳酸伸乙酯、環丁碸、環庚酮、2-庚酮、丁酸丁酯、異丁酸異丁酯、異戊基醚及十一烷之群組中之1種以上為較佳。 作為使用2種以上的有機溶劑之例子,可舉出PGMEA和PGME的併用、及PGMEA和PC的併用。 另外,藥液中的有機溶劑的種類及含量能夠使用氣相色譜質譜儀來進行測量。 Regarding the organic solvent, for example, it is selected from the group consisting of propylene glycol monomethyl ether acetate (PGMEA), propylene glycol monomethyl ether (PGME), cyclohexanone (CHN), ethyl lactate (EL), propylene carbonate (PC), Isopropyl alcohol (IPA), 4-methyl-2-pentanol (MIBC), butyl acetate (nBA), propylene glycol monoethyl ether, propylene glycol monopropyl ether, methyl methoxypropionate, cyclopentanone, γ- Butyrolactone, diisoamyl ether, isopentyl acetate, dimethyl styrene, N-methylpyrrolidone, diethylene glycol, ethylene glycol, dipropylene glycol, propylene glycol, ethyl carbonate, cyclobutane More than one kind from the group consisting of cycloheptanone, 2-heptanone, butyl butyrate, isobutyl isobutyrate, isopentyl ether and undecane is preferred. Examples of using two or more organic solvents include the combined use of PGMEA and PGME, and the combined use of PGMEA and PC. In addition, the type and content of the organic solvent in the medical solution can be measured using a gas chromatography mass spectrometer.

<金屬成分> 藥液含有金屬成分。 金屬成分由含金屬的粒子及金屬離子構成,例如,稱為金屬成分的含量之情況下,表示含金屬的粒子及金屬離子的合計含量。 含金屬的粒子包含金屬原子即可,例如可舉出金屬氧化物粒子、金屬氮化物粒子及金屬粒子。另外,金屬粒子係指由金屬構成之粒子。 <Metal Components> The liquid medicine contains metal components. The metal component is composed of metal-containing particles and metal ions. For example, when it is called the content of the metal component, it means the total content of the metal-containing particles and metal ions. The metal-containing particles only need to contain metal atoms, and examples thereof include metal oxide particles, metal nitride particles, and metal particles. In addition, metal particles refer to particles composed of metal.

藥液中所含有之金屬成分含有氧化鈦粒子及鈦離子。 氧化鈦粒子的含量與鈦離子的含量之質量比為10 0~10 12,從金屬殘渣缺陷或後述之複合物殘渣缺陷在矽基板上或氧化矽膜上難以產生之方面而言,上述質量比為10 1~10 10為較佳,10 2~10 10為更佳,10 3~10 8為進一步較佳,10 3~10 7為特佳。 The metal component contained in the medicinal solution contains titanium oxide particles and titanium ions. The mass ratio of the content of titanium oxide particles to the content of titanium ions is 10 0 to 10 12 . From the perspective that metal residue defects or composite residue defects described below are difficult to occur on a silicon substrate or a silicon oxide film, the above mass ratio 10 1 to 10 10 is preferred, 10 2 to 10 10 is more preferred, 10 3 to 10 8 is further preferred, and 10 3 to 10 7 is particularly preferred.

鈦離子的含量並無特別限制,多為0.01~150質量ppt。其中,從金屬殘渣缺陷或後述之複合物殘渣缺陷在矽基板上或氧化矽膜上難以產生之方面而言,鈦離子的含量相對於藥液總質量為0.10~100質量ppt為較佳,1.0~70質量ppt為更佳。The content of titanium ions is not particularly limited, but is mostly 0.01 to 150 ppt by mass. Among them, from the perspective that metal residue defects or composite residue defects described below are difficult to occur on a silicon substrate or a silicon oxide film, the content of titanium ions relative to the total mass of the chemical solution is 0.10 to 100 ppt by mass, and 1.0 is preferred. ~70 quality ppt is better.

氧化鈦粒子的含量並無特別限制,多為相對於金屬成分中的鈦成分的含量為1質量%以上且小於100質量%。其中,從金屬殘渣缺陷或後述之複合物殘渣缺陷在矽基板上或氧化矽膜上難以產生之方面而言,氧化鈦粒子的含量相對於金屬成分中的鈦成分的含量為5質量%以上且小於99質量%為較佳,30~90質量%為更佳。 鈦成分係指含有鈦原子之成分,可舉出含鈦的粒子及鈦離子,例如稱為鈦成分的含量之情況下,表示含鈦的粒子及鈦離子的合計含量。 含鈦的粒子包含鈦原子即可,例如可舉出氧化鈦粒子、氮化鈦粒子及鈦粒子。另外,鈦粒子係指由金屬鈦構成之粒子。 The content of the titanium oxide particles is not particularly limited, but is often 1 mass % or more and less than 100 mass % relative to the titanium component in the metal component. Among them, the content of the titanium oxide particles relative to the content of the titanium component in the metal component is 5 mass % or more and Less than 99 mass % is preferred, and 30 to 90 mass % is more preferred. The titanium component refers to a component containing titanium atoms, and examples include titanium-containing particles and titanium ions. For example, when it is called the content of the titanium component, it means the total content of the titanium-containing particles and titanium ions. The titanium-containing particles only need to contain titanium atoms, and examples thereof include titanium oxide particles, titanium nitride particles, and titanium particles. In addition, titanium particles refer to particles composed of metallic titanium.

氧化鈦粒子中,作為粒徑0.5~17 nm之粒子的比例並無特別限制,多為40質量%以上且小於100質量%。其中,從金屬殘渣缺陷或後述之複合物殘渣缺陷在矽基板上或氧化矽膜上難以產生之方面而言,氧化鈦粒子中,作為粒徑0.5~17 nm之粒子的比例為60質量%以上且小於98質量%為較佳,60~95質量%為更佳。Among the titanium oxide particles, the proportion of particles having a particle diameter of 0.5 to 17 nm is not particularly limited, but is usually 40 mass % or more and less than 100 mass %. Among them, in terms of making it difficult for metal residue defects or composite residue defects to be described later to occur on a silicon substrate or a silicon oxide film, the proportion of particles with a particle diameter of 0.5 to 17 nm among the titanium oxide particles is 60 mass % or more Less than 98% by mass is preferred, and 60 to 95% by mass is even more preferred.

藥液中所含有之金屬成分亦可以含有鐵離子。 鐵離子的含量並無特別限制,多為相對於藥液總質量為0.01~200質量ppt。其中,從金屬殘渣缺陷或後述之複合物殘渣缺陷在矽基板上或氧化矽膜上難以產生之方面而言,鐵離子的含量相對於藥液總質量為0.1~100質量ppt為較佳,1.0~90質量ppt為更佳。 The metal component contained in the medicinal solution may also contain iron ions. The content of iron ions is not particularly limited, but is usually 0.01 to 200 ppt by mass relative to the total mass of the chemical solution. Among them, from the perspective that metal residue defects or composite residue defects described below are difficult to occur on a silicon substrate or a silicon oxide film, the content of iron ions relative to the total mass of the chemical solution is preferably 0.1 to 100 ppt by mass, and 1.0 ~90 quality ppt is better.

藥液中所含有之金屬成分亦可以含有氧化鐵粒子。 氧化鐵粒子的含量並無特別限制,多為相對於金屬成分中的鐵成分的含量為1質量%以上且小於100質量%。其中,從金屬殘渣缺陷或後述之複合物殘渣缺陷在矽基板上或氧化矽膜上難以產生之方面而言,氧化鐵粒子的含量相對於金屬成分中的鐵成分的含量為5質量%以上且小於99質量%為較佳,10~95質量%為更佳。 鐵成分係指含有鐵原子之成分,可舉出含鐵的粒子及鐵離子,例如稱為鐵成分的含量之情況下,表示含鐵的粒子及鐵離子的合計含量。 含鐵的粒子包含鐵原子即可,例如可舉出氧化鐵粒子、氮化鐵粒子及鐵粒子。另外,鐵粒子係指由金屬鐵構成之粒子。 The metal component contained in the medical solution may also contain iron oxide particles. The content of the iron oxide particles is not particularly limited, but is often 1% by mass or more and less than 100% by mass relative to the content of the iron component in the metal component. Among them, the content of the iron oxide particles relative to the content of the iron component in the metal component is 5 mass % or more and Less than 99 mass % is preferred, and 10 to 95 mass % is more preferred. The iron component refers to a component containing iron atoms, and examples thereof include iron-containing particles and iron ions. For example, when it is called the content of the iron component, it means the total content of iron-containing particles and iron ions. The iron-containing particles only need to contain iron atoms, and examples thereof include iron oxide particles, iron nitride particles, and iron particles. In addition, iron particles refer to particles composed of metallic iron.

氧化鐵粒子中,作為粒徑0.5~17 nm之粒子的比例並無特別限制,多為40質量%以上且小於100質量%。其中,從金屬殘渣缺陷或後述之複合物殘渣缺陷在矽基板上或氧化矽膜上難以產生之方面而言,氧化鐵粒子中,作為粒徑0.5~17 nm之粒子的比例為60質量%以上且小於98質量%為較佳,60~95質量%為更佳。Among the iron oxide particles, the proportion of particles having a particle diameter of 0.5 to 17 nm is not particularly limited, but is usually 40 mass% or more and less than 100 mass%. Among them, the proportion of iron oxide particles as particles with a particle diameter of 0.5 to 17 nm is 60 mass % or more, since metal residue defects or composite residue defects described below are less likely to occur on a silicon substrate or a silicon oxide film. It is more preferable that it is less than 98 mass %, and it is more preferable that it is 60 to 95 mass %.

藥液中的氧化鐵粒子的含量與鐵離子的含量之質量比並無特別限制,多為10 -2~10 14。其中,從金屬殘渣缺陷或後述之複合物殘渣缺陷在矽基板上或氧化矽膜上難以產生之方面而言,上述質量比為10 0~10 12為較佳,10 2~10 10為更佳,10 3~10 8為進一步較佳,10 3~10 7為特佳。 The mass ratio of the content of iron oxide particles to the content of iron ions in the medical solution is not particularly limited, but is usually 10 -2 to 10 14 . Among them, the above mass ratio is preferably 10 0 to 10 12 , and more preferably 10 2 to 10 10 , in terms of making it difficult for metal residue defects or composite residue defects to be described later to occur on a silicon substrate or a silicon oxide film. , 10 3 to 10 8 are further preferred, and 10 3 to 10 7 are particularly preferred.

藥液中所含有之金屬成分亦可以含有鋁離子。 鋁離子的含量並無特別限制,多為相對於藥液總質量為0.01~200質量ppt。其中,從金屬殘渣缺陷或後述之複合物殘渣缺陷在矽基板上或氧化矽膜上難以產生之方面而言,鋁離子的含量相對於藥液總質量為0.1~100質量ppt為較佳,1.0~90質量ppt為更佳。 The metal component contained in the medical solution may also contain aluminum ions. The content of aluminum ions is not particularly limited, but is usually 0.01 to 200 ppt by mass relative to the total mass of the chemical solution. Among them, from the perspective that metal residue defects or composite residue defects described below are difficult to occur on a silicon substrate or a silicon oxide film, the content of aluminum ions relative to the total mass of the chemical solution is preferably 0.1 to 100 ppt by mass, and 1.0 ~90 quality ppt is better.

藥液中所含有之金屬成分亦可以含有氧化鋁粒子。 氧化鋁粒子的含量並無特別限制,多為相對於金屬成分中的鋁成分的含量為1質量%以上且小於100質量%。其中,從金屬殘渣缺陷或後述之複合物殘渣缺陷在矽基板上或氧化矽膜上難以產生之方面而言,氧化鋁粒子的含量相對於金屬成分中的鋁成分的含量為5質量%以上且小於99質量%為較佳,10~95質量%為更佳。 鋁成分係指含有鋁原子之成分,可舉出含鋁的粒子及鋁離子,例如稱為鋁成分的含量之情況下,表示含鋁的粒子及鋁離子的合計含量。 含鋁的粒子包含鋁原子即可,例如可舉出氧化鋁粒子、氮化鋁粒子及鋁粒子。另外,鋁粒子係指由金屬鋁構成之粒子。 The metal component contained in the medical solution may also contain aluminum oxide particles. The content of the alumina particles is not particularly limited, but is often 1% by mass or more and less than 100% by mass relative to the content of the aluminum component in the metal component. Among them, the content of the alumina particles relative to the content of the aluminum component in the metal component is 5 mass % or more and Less than 99 mass % is preferred, and 10 to 95 mass % is more preferred. The aluminum component means a component containing aluminum atoms, and examples thereof include aluminum-containing particles and aluminum ions. For example, when it is called the content of the aluminum component, it means the total content of the aluminum-containing particles and aluminum ions. The aluminum-containing particles only need to contain aluminum atoms, and examples thereof include aluminum oxide particles, aluminum nitride particles, and aluminum particles. In addition, aluminum particles refer to particles composed of metallic aluminum.

氧化鋁粒子中,作為粒徑0.5~17 nm之粒子的比例並無特別限制,多為40質量%以上且小於100質量%。其中,從金屬殘渣缺陷或後述之複合物殘渣缺陷在矽基板上或氧化矽膜上難以產生之方面而言,氧化鋁粒子中,作為粒徑0.5~17 nm之粒子的比例為60質量%以上且小於98質量%為較佳,60~95質量%為更佳。Among the alumina particles, the proportion of particles having a particle diameter of 0.5 to 17 nm is not particularly limited, but is usually 40 mass% or more and less than 100 mass%. Among them, in terms of making it difficult for metal residue defects or composite residue defects to be described later to occur on a silicon substrate or a silicon oxide film, the proportion of particles with a particle size of 0.5 to 17 nm among the alumina particles is 60 mass % or more It is more preferable that it is less than 98 mass %, and it is more preferable that it is 60 to 95 mass %.

藥液中的氧化鋁粒子的含量與鋁離子的含量之質量比並無特別限制,多為10 -2~10 14。其中,從金屬殘渣缺陷或後述之複合物殘渣缺陷在矽基板上或氧化矽膜上難以產生之方面而言,上述質量比為10 0~10 12為較佳,10 2~10 10為更佳,10 3~10 8為進一步較佳,10 3~10 7為特佳。 The mass ratio of the content of aluminum oxide particles to the content of aluminum ions in the chemical solution is not particularly limited, but is usually 10 -2 to 10 14 . Among them, the above mass ratio is preferably 10 0 to 10 12 , and more preferably 10 2 to 10 10 , in terms of making it difficult for metal residue defects or composite residue defects to be described later to occur on a silicon substrate or a silicon oxide film. , 10 3 to 10 8 are further preferred, and 10 3 to 10 7 are particularly preferred.

藥液中所含有之金屬成分亦可以含有除了上述之以外的其他金屬原子的成分。 作為其他金屬原子,例如可舉出Na(鈉)、K(鉀)、Ca(鈣)、Cu(銅)、Mg(鎂)、Mn(錳)、Li(鋰)、Cr(鉻)、Ni(鎳)及Zr(鋯)。 The metal component contained in the medical solution may also contain components of other metal atoms in addition to those mentioned above. Examples of other metal atoms include Na (sodium), K (potassium), Ca (calcium), Cu (copper), Mg (magnesium), Mn (manganese), Li (lithium), Cr (chromium), Ni (Nickel) and Zr (Zirconium).

藥液中所含有之金屬成分亦可以含有氧化銅粒子。 氧化銅粒子的含量並無特別限制,相對於金屬成分中的銅成分的含量多為1質量%以上且小於100質量%。其中,從金屬殘渣缺陷或後述之複合物殘渣缺陷在矽基板上或氧化矽膜上難以產生之方面而言,氧化銅粒子的含量相對於金屬成分中的銅成分的含量為5質量%以上且小於99質量%為較佳,10~95質量%為更佳。 銅成分係指含有銅原子之成分,可舉出含銅的粒子及銅離子,例如稱為銅成分的含量之情況下,表示含銅的粒子及銅離子的合計含量。 含銅的粒子包含銅原子即可,例如可舉出氧化銅粒子、氮化銅粒子及銅粒子。另外,銅粒子係指由金屬銅構成之粒子。 The metal component contained in the medicinal solution may also contain copper oxide particles. The content of copper oxide particles is not particularly limited, but is often 1 mass % or more and less than 100 mass % relative to the copper component in the metal component. Among them, the content of the copper oxide particles relative to the content of the copper component in the metal component is 5 mass % or more and Less than 99 mass % is preferred, and 10 to 95 mass % is more preferred. The copper component refers to a component containing copper atoms, and examples include copper-containing particles and copper ions. For example, when it is called the content of the copper component, it means the total content of the copper-containing particles and copper ions. The copper-containing particles only need to contain copper atoms, and examples thereof include copper oxide particles, copper nitride particles, and copper particles. In addition, the copper particles refer to particles composed of metallic copper.

氧化銅粒子中,作為粒徑0.5~17 nm之粒子的比例並無特別限制,多為40質量%以上且小於100質量%。其中,從金屬殘渣缺陷或後述之複合物殘渣缺陷在矽基板上或氧化矽膜上難以產生之方面而言,氧化銅粒子中,作為粒徑0.5~17 nm之粒子的比例為60質量%以上且小於98質量%為較佳,60~95質量%為更佳。Among the copper oxide particles, the proportion of particles having a particle diameter of 0.5 to 17 nm is not particularly limited, but is usually 40 mass% or more and less than 100 mass%. Among them, in terms of making it difficult for metal residue defects or composite residue defects to be described later to occur on a silicon substrate or a silicon oxide film, the proportion of particles with a particle size of 0.5 to 17 nm among the copper oxide particles is 60 mass % or more It is more preferable that it is less than 98 mass %, and it is more preferable that it is 60 to 95 mass %.

藥液中的氧化銅粒子的含量與銅離子的含量之質量比並無特別限制,多為10 -2~10 14。其中,從金屬殘渣缺陷或後述之複合物殘渣缺陷在矽基板上或氧化矽膜上難以產生之方面而言,上述質量比為10 0~10 12為較佳,10 2~10 10為更佳,10 3~10 8為進一步較佳,10 3~10 7為特佳。 The mass ratio of the content of copper oxide particles to the content of copper ions in the medicinal solution is not particularly limited, but is usually 10 -2 to 10 14 . Among them, the above mass ratio is preferably 10 0 to 10 12 , and more preferably 10 2 to 10 10 , in terms of making it difficult for metal residue defects or composite residue defects to be described later to occur on a silicon substrate or a silicon oxide film. , 10 3 to 10 8 are further preferred, and 10 3 to 10 7 are particularly preferred.

金屬成分可以為不可避免地包含在藥液中所包含之各成分(原料)中之金屬成分,亦可以為對處理液進行製造、儲存和/或移送時不可避免地被包含之金屬成分,還可以有意添加。The metal component may be a metal component that is inevitably contained in each component (raw material) contained in the chemical liquid, or may be a metal component that is inevitably contained when the treatment liquid is manufactured, stored, and/or transferred, or it may be a metal component that is inevitably contained in the chemical liquid. Can be added intentionally.

金屬成分的含量並無特別限制,但是從金屬殘渣缺陷或後述之複合物殘渣缺陷在矽基板上或氧化矽膜上難以產生之方面而言,相對於藥液的總質量為10~500000質量ppt為較佳。The content of the metal component is not particularly limited, but from the viewpoint that metal residue defects or composite residue defects described below are difficult to occur on a silicon substrate or a silicon oxide film, it is 10 to 500,000 ppt by mass relative to the total mass of the chemical solution. For better.

另外,藥液中的金屬離子及含金屬的粒子的種類及含量能夠藉由SP-ICP-MS法(Single Nano Particle Inductively Coupled Plasma Mass Spectrometry:單奈米粒子感應耦合電漿質譜法)來測量。 在此,所謂SP-ICP-MS法,使用與通常的ICP-MS法(感應耦合電漿質譜法)相同的裝置,而只有資料分析不同。SP-ICP-MS法的資料分析能夠藉由市售的軟體來實施。 ICP-MS中,對於成為測量對象之金屬成分的含量,與其存在形態無關地進行測量。因此,確定成為測量對象之含金屬的粒子和金屬離子的總質量來作為金屬成分的含量。 In addition, the types and contents of metal ions and metal-containing particles in the medical solution can be measured by SP-ICP-MS (Single Nano Particle Inductively Coupled Plasma Mass Spectrometry). Here, the so-called SP-ICP-MS method uses the same equipment as the normal ICP-MS method (inductively coupled plasma mass spectrometry), but only the data analysis is different. Data analysis by the SP-ICP-MS method can be performed using commercially available software. In ICP-MS, the content of the metal component to be measured is measured regardless of its existing form. Therefore, the total mass of the metal-containing particles and metal ions to be measured is determined as the content of the metal component.

另一方面,SP-ICP-MS法中,能夠測量含金屬的粒子的含量。因此,若自試樣中的金屬成分的含量減去含金屬的粒子的含量,則能夠算出試樣中的金屬離子的含量。 作為SP-ICP-MS法的裝置,例如可舉出Agilent Technologies公司製造,Agilent8800三重四極ICP-MS(inductively coupled plasma mass spectrometry:感應耦合電漿質譜法,用於半導體分析,選項#200),能夠藉由實施例中所記載之方法來進行測量。作為除了上述以外的其他裝置,除PerkinElmer Co., Ltd.製造NexION350S以外,還能夠使用Agilent Technologies公司製造Agilent 8900。 On the other hand, the SP-ICP-MS method can measure the content of metal-containing particles. Therefore, by subtracting the content of metal-containing particles from the content of metal components in the sample, the content of metal ions in the sample can be calculated. An example of an apparatus for the SP-ICP-MS method is the Agilent 8800 triple quadrupole ICP-MS (inductively coupled plasma mass spectrometry, for semiconductor analysis, option #200) manufactured by Agilent Technologies. Measurement was performed by the method described in the Examples. As devices other than the above, in addition to NexION350S manufactured by PerkinElmer Co., Ltd., Agilent 8900 manufactured by Agilent Technologies can also be used.

另外,由於在SP-ICP-MS中無法測量10 nm以下的含金屬的粒子,因此使用日本特開2009-188333號公報的0015~0067段中所記載的方法(以下,亦稱為“特定方法”。)。 在此,藉由特定方法,計數殘留於基板上之0.5~10 nm的粒子數,對其計數使用來自於20 nm的粒子的SNP-ICP-MS的換算值。其中,由於每種金屬的換算值不同,因此對每種金屬分別進行該換算。 換算的具體方法如下所述。 例如,在SNP-ICP-MS中藥液中的20 nm的氧化鈦粒子的數為10個,藉由特定方法算出之殘留於基板上之20 nm的氧化鈦粒子的數為1個的情況下,換算值成為10。亦即,能夠藉由特定方法確認之1 nm的氧化鈦粒子的數為100個的情況下,以換算值的10倍為基礎,在藥液中計算為1000個(100個×10)。本發明中的10 nm以下的粒子數針對任一金屬,藉由該換算方法進行推測。 In addition, since metal-containing particles of 10 nm or less cannot be measured by SP-ICP-MS, the method described in paragraphs 0015 to 0067 of Japanese Patent Application Laid-Open No. 2009-188333 (hereinafter also referred to as "specific method") was used. ".). Here, a specific method is used to count the number of particles remaining in the range of 0.5 to 10 nm on the substrate, and the SNP-ICP-MS conversion value derived from 20 nm particles is used for the counting. Among them, since the conversion value of each metal is different, the conversion is performed separately for each metal. The specific conversion method is as follows. For example, in SNP-ICP-MS, the number of 20 nm titanium oxide particles in the chemical solution is 10, and the number of 20 nm titanium oxide particles remaining on the substrate calculated by a specific method is 1. , the converted value becomes 10. That is, when the number of 1 nm titanium oxide particles that can be confirmed by a specific method is 100, it is calculated as 1000 particles (100 particles × 10) in the chemical solution based on 10 times the conversion value. The number of particles below 10 nm in the present invention is estimated based on this conversion method for any metal.

<有機雜質> 藥液亦可以含有有機雜質。 藥液中的有機雜質的含量並無特別限制,但是從在矽基板上更難以產生後述之色斑殘渣缺陷之方面而言,相對於藥液總質量為1000~100000質量ppt為較佳。 另外,有機雜質係指與有機溶劑不同之有機化合物且相對於有機溶劑的總質量以10000質量ppm以下的含量含有之有機化合物。亦即,本說明書中,相對於上述有機溶劑的總質量以10000質量ppm以下的含量含有之有機化合物相當於有機雜質,而不相當於有機溶劑。 有機雜質多為在對被純化物進行純化而得到藥液之過程中混入於藥液中或添加到藥液中。作為該等有機雜質,例如可舉出塑化劑、抗氧化劑及來自於該等之化合物(典型地為分解產物)等。 <Organic impurities> The medicinal solution may also contain organic impurities. The content of organic impurities in the chemical solution is not particularly limited, but in order to make it more difficult to produce the stain residue defect described below on the silicon substrate, 1,000 to 100,000 ppt by mass relative to the total mass of the chemical solution is preferred. In addition, organic impurities refer to organic compounds that are different from organic solvents and are contained in a content of 10,000 mass ppm or less relative to the total mass of the organic solvent. That is, in this specification, an organic compound contained in a content of 10,000 mass ppm or less with respect to the total mass of the above-mentioned organic solvent corresponds to an organic impurity and does not correspond to an organic solvent. Most of the organic impurities are mixed into or added to the medical solution during the process of purifying the object to be purified to obtain the medical solution. Examples of the organic impurities include plasticizers, antioxidants, and compounds derived from these (typically decomposition products).

<水> 藥液可以含有水。水不包括在上述有機雜質內。 作為水,並無特別限制,例如能夠使用蒸餾水、離子交換水及純水等。 水可以添加到藥液中,亦可以在藥液的製造步驟中無意間被混合到藥液中。作為在藥液的製造步驟中無意間被混合之情形,例如可舉出在製造藥液時所使用之原料(例如,有機溶劑)中含有水之情形及在藥液的製造步驟中混合(例如,污染)水之情形等,但是並不限制於上述。 <Water> The medicinal solution may contain water. Water is not included in the above mentioned organic impurities. The water is not particularly limited, and for example, distilled water, ion-exchanged water, pure water, etc. can be used. Water may be added to the medicinal solution or may be inadvertently mixed into the medicinal solution during the manufacturing step of the medicinal solution. Examples of unintentional mixing during the manufacturing step of the medical solution include the case where water is contained in the raw materials (for example, organic solvents) used when manufacturing the medical solution, and mixing during the manufacturing step of the medical solution (such as , pollution) water conditions, etc., but are not limited to the above.

作為藥液中的水的含量並無特別限制,但是相對於藥液的總質量為2.0質量%以下為較佳,500質量ppb以下為更佳。下限並無特別限制,但是可舉出0質量%。藥液中的水的含量係指使用以卡爾費休(Karl Fischer)水分測量法作為測量原理之裝置測量之水分含量。The water content in the chemical solution is not particularly limited, but it is preferably 2.0 mass % or less, and more preferably 500 mass ppb or less based on the total mass of the chemical solution. The lower limit is not particularly limited, but an example is 0 mass %. The water content in the chemical solution refers to the moisture content measured using a device based on the Karl Fischer moisture measuring method as the measuring principle.

<藥液的用途> 本發明的藥液用於半導體器件之製造為較佳。其中,使用本發明的藥液製造半導體晶片為較佳。 具體而言,在包含微影步驟、蝕刻步驟、離子植入步驟及剝離步驟等之半導體元件的製造步驟中,在結束各步驟之後或轉移至下一個步驟之前,用於處理有機物,具體而言,較佳地用作預濕液、顯影液、沖洗液及研磨液等。 除此之外,藥液還可以用作光阻膜形成用組成物所含有之樹脂的稀釋液等(換言之,為溶劑)。 <Use of liquid medicine> The chemical solution of the present invention is preferably used in the manufacture of semiconductor devices. Among them, it is preferable to use the chemical solution of the present invention to manufacture semiconductor wafers. Specifically, in the manufacturing steps of semiconductor elements including lithography steps, etching steps, ion implantation steps, and stripping steps, it is used to process organic matter after completing each step or before moving to the next step. Specifically, , preferably used as prewetting fluid, developer fluid, rinse fluid and grinding fluid, etc. In addition, the chemical solution can also be used as a diluent of the resin contained in the composition for forming a photoresist film (in other words, as a solvent).

又,上述藥液還能夠用於除了用於半導體器件之製造以外的其他用途,還能夠用作聚醯亞胺、感測器用阻劑及透鏡用阻劑等顯影液及沖洗液。 又,上述藥液還能夠用作醫療用途或清洗用途的溶劑。例如,能夠較佳地用於配管、容器及基板(例如,晶圓及玻璃等)等的清洗。 作為上述清洗用途,用作清洗與上述預濕液等液接觸之配管及容器等之清洗液(配管清洗液及容器清洗液等)亦為較佳。 In addition, the above-mentioned chemical solution can be used for purposes other than the manufacture of semiconductor devices, and can also be used as a developer and rinse solution such as polyimide, resist for sensors, and resist for lenses. In addition, the above-mentioned chemical liquid can also be used as a solvent for medical purposes or cleaning purposes. For example, it can be suitably used for cleaning pipes, containers, substrates (for example, wafers, glass, etc.). As the above-mentioned cleaning purpose, it is also preferable to use it as a cleaning liquid (pipe cleaning liquid, container cleaning liquid, etc.) for cleaning pipes and containers that are in contact with the above-mentioned prewet liquid and other liquids.

其中,藥液可較佳地用於預濕液、顯影液、沖洗液、研磨液及光阻膜形成用組成物。其中,在應用於預濕液、顯影液及沖洗液之情況下,發揮更優異之效果。尤其,應用於將曝光光源設為EUV之情況下的預濕液、顯影液及沖洗液之情況下,發揮更優異之效果。又,在應用於用於該等液的移送之配管中所使用之配管清洗液之情況下,發揮更優異之效果。Among them, the chemical solution can be preferably used in a prewet solution, a developer solution, a rinse solution, a polishing solution, and a composition for forming a photoresist film. Among them, when used in pre-wet fluid, developer fluid and rinse fluid, it can achieve better results. In particular, when the exposure light source is set to EUV, it exhibits even better effects when used in pre-wet liquids, developers, and rinse liquids. Furthermore, when applied to a pipe cleaning liquid used in pipes for transferring such liquids, a more excellent effect is exerted.

<藥液之製造方法> 作為上述藥液之製造方法,並無特別限制,能夠使用公知的製造方法。其中,可獲得顯示更優異之本發明的效果之方面而言,藥液之製造方法具有使用過濾器對含有有機溶劑之被純化物進行過濾而獲得藥液之過濾步驟為較佳。 <Method of manufacturing liquid medicine> There is no particular limitation on the method for producing the above-mentioned chemical solution, and a known production method can be used. Among them, in order to obtain a more excellent effect of the present invention, it is preferable that the method for producing a medicinal solution has a filtration step of filtering a purified substance containing an organic solvent using a filter to obtain a medicinal solution.

在過濾步驟中使用之被純化物可以藉由購買等來採購,亦可以使原料進行反應而獲得。作為被純化物,雜質的含量少為較佳。作為這樣的被純化物的市售品,例如,可舉出稱為“高純度等級產品”之市售品。The purified substance used in the filtration step can be purchased by purchasing, etc., or can be obtained by reacting raw materials. As a purified product, it is preferable that the content of impurities is small. Examples of commercially available products of such purified products include commercially available products called "high-purity grade products."

作為使原料進行反應而獲得被純化物(典型地,含有有機溶劑之被純化物)之方法,並無特別限制,能夠使用公知的方法。例如,可舉出在觸媒的存在下,使1種或複數種原料進行反應,而獲得有機溶劑之方法。 更具體而言,例如,可舉出使乙酸和正丁醇在硫酸的存在下進行反應而獲得乙酸丁酯之方法;使乙烯、氧及水在Al(C 2H 5) 3的存在下進行反應而獲得1-己醇之方法;使順式-4-甲基-2-戊烯在Ipc 2BH(Diisopinocampheylborane:二異松蒎烯基硼烷)的存在下進行反應而獲得4-甲基-2-戊醇之方法;使環氧丙烷、甲醇及乙酸在硫酸的存在下進行反應而獲得PGMEA(丙二醇1-單甲醚2-乙酸酯)之方法;使丙酮及氫在氧化銅-氧化鋅-氧化鋁的存在下進行反應而獲得IPA(isopropyl alcohol:異丙醇)之方法;及使乳酸及乙醇進行反應而獲得乳酸乙酯之方法;等。 The method of reacting raw materials to obtain a purified product (typically, a purified product containing an organic solvent) is not particularly limited, and a known method can be used. For example, there is a method of obtaining an organic solvent by reacting one or a plurality of raw materials in the presence of a catalyst. More specifically, examples include a method of reacting acetic acid and n-butanol in the presence of sulfuric acid to obtain butyl acetate; and a method of reacting ethylene, oxygen and water in the presence of Al(C 2 H 5 ) 3 The method of obtaining 1-hexanol is to react cis-4-methyl-2-pentene in the presence of Ipc 2 BH (Diisopinocampheylborane) to obtain 4-methyl- The method of 2-pentanol; the method of reacting propylene oxide, methanol and acetic acid in the presence of sulfuric acid to obtain PGMEA (propylene glycol 1-monomethyl ether 2-acetate); the oxidation of acetone and hydrogen in copper oxide A method of reacting in the presence of zinc-aluminum oxide to obtain IPA (isopropyl alcohol: isopropyl alcohol); a method of reacting lactic acid and ethanol to obtain ethyl lactate; etc.

(過濾步驟) 本發明的藥液之製造方法具有使用過濾器對上述被純化物進行過濾而獲得藥液之過濾步驟為較佳。作為使用過濾器對被純化物進行過濾之方法,並無特別限制,但是在加壓或未加壓下使被純化物通過(通液)具有殼體和容納於殼體中之過濾芯之過濾器單元為較佳。 (Filtering step) The method for producing a medicinal solution of the present invention preferably includes a filtration step of filtering the above-mentioned purified substance using a filter to obtain a medicinal solution. There is no particular limitation on the method of filtering the object to be purified using a filter. However, the method is to pass (liquid through) the object to be purified under pressure or unpressurization and has a housing and a filter element housed in the housing. The unit is better.

•過濾器的細孔直徑 作為過濾器的細孔直徑,並無特別限制,能夠使用通常用於被純化物的過濾而使用之細孔直徑的過濾器。其中,從將藥液所含有之粒子(金屬粒子等)的數更容易控制在所期望的範圍內之方面而言,過濾器的細孔徑為200 nm以下為較佳,20 nm以下為更佳,10 nm以下為進一步較佳,5 nm以下為特佳。作為下限值並無特別限制,但從生產性的方面而言,一般係1 nm以上為較佳。 另外,本說明書中,過濾器的細孔徑係指藉由異丙醇(IPA)的泡點確定之細孔徑。 •Filter pore diameter The pore diameter of the filter is not particularly limited, and a filter having a pore diameter generally used for filtration of a substance to be purified can be used. Among them, from the perspective of making it easier to control the number of particles (metal particles, etc.) contained in the chemical solution within a desired range, the pore diameter of the filter is preferably 200 nm or less, and more preferably 20 nm or less. , 10 nm or less is further preferred, and 5 nm or less is particularly preferred. The lower limit value is not particularly limited, but from the viewpoint of productivity, it is generally preferably 1 nm or more. In addition, in this specification, the pore size of the filter refers to the pore size determined by the bubble point of isopropyl alcohol (IPA).

若過濾器的細孔直徑為5.0 nm以下,則更容易控制藥液中的含有粒子數量之方面而言為較佳。以下,還將細孔直徑為5.0 nm以下的過濾器稱為“微小孔徑過濾器”。 另外,微小孔徑過濾器可以單獨使用,亦可以與具有其他細孔直徑之過濾器一起使用。其中,從生產性更優異之方面而言,與具有更大的細孔直徑之過濾器一起使用為較佳。亦即,使用2個以上的過濾器之情況下,至少1個過濾器的細孔徑為5.0 nm以下為較佳。在該情況下,若使預先藉由具有更大的細孔直徑之過濾器進行過濾而得之被純化物通過微小孔徑過濾器,則可防止微小孔徑過濾器的堵塞。 亦即,作為過濾器的細孔直徑,在使用1個過濾器之情況下,細孔直徑係5.0 nm以下為較佳,在使用2個以上的過濾器之情況下,具有最小的細孔直徑之過濾器的細孔直徑係5.0 nm以下為較佳。 If the pore diameter of the filter is 5.0 nm or less, it is preferable in terms of making it easier to control the number of particles contained in the chemical solution. Hereinafter, a filter with a pore diameter of 5.0 nm or less will also be referred to as a "micropore filter." In addition, micropore filters can be used alone or together with filters with other pore diameters. Among them, in terms of better productivity, it is preferable to use it with a filter having a larger pore diameter. That is, when using two or more filters, it is preferable that the pore diameter of at least one filter is 5.0 nm or less. In this case, if the object to be purified and previously filtered through a filter having a larger pore diameter passes through the fine pore diameter filter, clogging of the fine pore diameter filter can be prevented. That is, as the pore diameter of the filter, when one filter is used, the pore diameter is preferably 5.0 nm or less, and when two or more filters are used, the minimum pore diameter is The pore diameter of the filter is preferably 5.0 nm or less.

作為依次使用細孔直徑不同的2種以上的過濾器之形態,並無特別限制,但是可舉出沿著移送被純化物之管路,依次配置已進行說明之過濾器單元之方法。此時,若作為管路整體而欲將被純化物的每單位時間的流量設為一定,則有時與細孔直徑更大的過濾器相比,會對細孔直徑更小的過濾器施加更大的壓力。在該情況下,在過濾器之間配置壓力調節閥及阻尼器等,將對具有小的細孔直徑之過濾器施加之壓力設為一定、或者沿著管路並排配置容納有相同的過濾器之過濾器單元,從而增加過濾面積為較佳。這樣,能夠更穩定地控制藥液中的粒子的數量。There is no particular limitation on the form in which two or more filters having different pore diameters are used sequentially. However, one example is a method of sequentially arranging the already described filter units along a pipeline that transports the object to be purified. At this time, if the flow rate of the purified substance per unit time is to be constant as a whole in the pipeline, a filter with a smaller pore diameter may be subjected to a higher pressure than a filter with a larger pore diameter. More pressure. In this case, a pressure regulating valve, a damper, etc. are arranged between the filters to keep the pressure applied to the filter with a small pore diameter constant, or the same filters are arranged side by side along the pipeline. It is better to use a filter unit to increase the filtering area. In this way, the number of particles in the chemical solution can be controlled more stably.

•過濾器的材料 作為過濾器的材料,並無特別限制,作為過濾器的材料,能夠使用公知的材料。具體而言,在樹脂之情況下,可舉出尼龍(例如,6-尼龍及6,6-尼龍)等聚醯胺;聚乙烯及聚丙烯等聚烯烴;聚苯乙烯;聚醯亞胺;聚醯胺醯亞胺;聚(甲基)丙烯酸酯;聚四氟乙烯、全氟烷氧基烷烴、全氟乙烯丙烯共聚物、乙烯•四氟乙烯共聚物、乙烯-三氟氯乙烯共聚物、聚三氟氯乙烯、聚偏二氟乙烯及聚氟乙烯等聚氟碳化物;聚乙烯醇;聚酯;纖維素;醋酸纖維素等。 其中,就具有更優異之耐溶劑性,且所獲得之藥液具有更優異之缺陷抑制性之方面而言,選自包含尼龍(其中,6,6-尼龍為較佳)、聚烯烴(其中,聚乙烯為較佳)、聚(甲基)丙烯酸酯及聚氟碳化物(其中,聚四氟乙烯(PTFE)、全氟烷氧基烷烴(PFA)為較佳。)之群組中之至少1種為較佳。該等聚合物能夠單獨使用或者組合使用2種以上。 又,除了樹脂以外,亦可以為矽藻土及玻璃等。 此外,還可以將使聚烯烴(後述之UPE(超高分子量聚乙烯)等)與聚醯胺(例如,尼龍-6或尼龍-6,6等尼龍)接枝共聚而成之聚合物(尼龍接枝UPE等)設為過濾器的材料。 •Filter material The material of the filter is not particularly limited, and known materials can be used as the material of the filter. Specifically, in the case of resin, polyamides such as nylon (for example, 6-nylon and 6,6-nylon); polyolefins such as polyethylene and polypropylene; polystyrene; polyimide; Polyamide imide; poly(meth)acrylate; polytetrafluoroethylene, perfluoroalkoxyalkane, perfluoroethylene propylene copolymer, ethylene·tetrafluoroethylene copolymer, ethylene-chlorotrifluoroethylene copolymer , polyfluorocarbons such as polychlorotrifluoroethylene, polyvinylidene fluoride and polyvinyl fluoride; polyvinyl alcohol; polyester; cellulose; cellulose acetate, etc. Among them, in terms of having more excellent solvent resistance and the obtained chemical solution having more excellent defect suppression properties, it is selected from the group consisting of nylon (among them, 6,6-nylon is preferred), polyolefin (among them, , polyethylene is preferred), poly(meth)acrylate and polyfluorocarbon (of which polytetrafluoroethylene (PTFE) and perfluoroalkoxyalkane (PFA) are preferred.) At least one type is preferred. These polymers can be used individually or in combination of 2 or more types. In addition to resin, diatomaceous earth, glass, etc. may also be used. In addition, polymers (nylon) obtained by graft copolymerizing polyolefins (UPE (ultra-high molecular weight polyethylene), etc. to be described later) and polyamides (for example, nylons such as nylon-6 or nylon-6,6) can also be used. Grafted UPE, etc.) as the filter material.

又,過濾器可以為經表面處理之過濾器。作為表面處理的方法並無特別限制,能夠使用公知的方法。作為表面處理的方法,例如可舉出化學修飾處理、電漿處理、疏水處理、塗層、氣體處理及燒結等。In addition, the filter may be a surface-treated filter. The surface treatment method is not particularly limited, and a known method can be used. Examples of surface treatment methods include chemical modification treatment, plasma treatment, hydrophobic treatment, coating, gas treatment, and sintering.

電漿處理會使過濾器的表面親水化,因此為較佳。作為電漿處理而被親水化之過濾器的表面上的水接觸角並無特別限制,但用接觸角測量量之在25℃下之靜態接觸角係60°以下為較佳,50°以下為更佳,30°以下為進一步較佳。Plasma treatment makes the surface of the filter hydrophilic and is therefore preferred. The water contact angle on the surface of the filter that has been hydrophilized as a result of plasma treatment is not particularly limited, but the static contact angle measured by the contact angle at 25°C is preferably 60° or less, and 50° or less. Better still, 30° or less is even better.

作為化學修飾處理,將離子交換基導入到過濾器之方法為較佳。 亦即,作為過濾器,具有離子交換基之過濾器為較佳。 作為離子交換基,可舉出陽離子交換基及陰離子交換基,作為陽離子交換基,可舉出磺酸基、羧基及磷酸基等,作為陰離子交換基,可舉出4級銨基等。作為將離子交換基導入到過濾器之方法並無特別限制,但是可舉出使含有離子交換基及聚合性基之化合物與過濾器進行反應而進行典型地接枝化之方法。 As a chemical modification treatment, a method of introducing an ion exchange group into the filter is preferred. That is, as a filter, a filter having an ion exchange group is preferable. Examples of the ion exchange group include a cation exchange group and an anion exchange group. Examples of the cation exchange group include a sulfonic acid group, a carboxyl group, a phosphate group, and the like. Examples of an anion exchange group include a quaternary ammonium group and the like. The method of introducing an ion exchange group into the filter is not particularly limited, but a typical method of grafting is to react a compound containing an ion exchange group and a polymerizable group with the filter.

作為離子交換基的導入方法並無特別限制,但是向過濾器照射電離放射線(α射線、β射線、γ射線、X射線及電子束等)而產生活性部分(自由基)。將該照射後的過濾器浸漬於含單體的溶液中,使單體與過濾器接枝聚合。其結果,聚合該單體而得到之聚合物與過濾器接枝。使該產生之聚合物與含有陰離子交換基或陽離子交換基之化合物接觸反應而能夠將離子交換基導入到聚合物中。The introduction method of the ion exchange group is not particularly limited, but the filter is irradiated with ionizing radiation (α rays, β rays, γ rays, X rays, electron beams, etc.) to generate active moieties (free radicals). The irradiated filter is immersed in a solution containing a monomer, and the monomer and the filter are graft-polymerized. As a result, the polymer obtained by polymerizing the monomer is grafted with the filter. The produced polymer can be brought into contact with a compound containing an anion exchange group or a cation exchange group to introduce the ion exchange group into the polymer.

又,過濾器亦可以為將藉由放射線接枝聚合法而形成有離子交換基之織布或不織布與以往的玻璃棉、織布或不織布的過濾材料組合之構成。Furthermore, the filter may be composed of a combination of woven fabric or nonwoven fabric having an ion exchange group formed by radiation graft polymerization and conventional glass wool, woven fabric, or nonwoven fabric filter materials.

若使用具有離子交換基之過濾器,則將含金屬的粒子及金屬離子的藥液中的含量更容易控制在所期望的範圍內。作為構成具有離子交換基之過濾器之材料,並無特別限制,但是可舉出將離子交換基導入到聚氟碳化物及聚烯烴中之材料等,將離子交換基導入到聚氟碳化物中之材料為更佳。 具有離子交換基之過濾器的細孔徑並無特別限制,但是1~30 nm為較佳,5~20 nm為更佳。具有離子交換基之過濾器可以兼作已說明之具有最小的細孔直徑之過濾器,亦可以別於具有最小的細孔直徑之過濾器而使用。其中,可獲得顯示更優異之本發明的效果之方面而言,過濾步驟中使用具有離子交換基之過濾器及不具有離子交換基且具有最小的細孔直徑之過濾器之形態為較佳。 作為已說明之具有最小的細孔直徑之過濾器的材料,並無特別限制,但是從耐溶劑性等的方面而言,通常,選自包含聚氟碳化物及聚烯烴之群組中之至少1種為較佳,聚烯烴為更佳。 If a filter having an ion exchange group is used, it is easier to control the content of metal-containing particles and metal ions in the chemical solution within a desired range. The material constituting the filter having an ion exchange group is not particularly limited, but examples thereof include materials in which ion exchange groups are introduced into polyfluorocarbons and polyolefins, and materials in which ion exchange groups are introduced into polyfluorocarbons. The material is better. The pore diameter of the filter having an ion exchange group is not particularly limited, but 1 to 30 nm is preferred, and 5 to 20 nm is more preferred. The filter with an ion exchange base can double as the filter with the smallest pore diameter as described above, or can be used separately from the filter with the smallest pore diameter. Among them, in order to obtain a more excellent effect of the present invention, it is preferable to use a filter having an ion exchange group and a filter having the smallest pore diameter without an ion exchange group in the filtration step. The material of the filter having the smallest pore diameter described above is not particularly limited, but in terms of solvent resistance and the like, usually at least one selected from the group consisting of polyfluorocarbons and polyolefins is used. One type is preferred, and polyolefin is even more preferred.

因此,作為在過濾步驟中使用之過濾器,可以使用不同材料的2種以上的過濾器,例如,可以使用選自包含聚烯烴、聚氟碳化物、聚醯胺及將離子交換基導入到該等中之材料的過濾器之群組中之2種以上。Therefore, as the filter used in the filtration step, two or more types of filters of different materials can be used. For example, a filter selected from the group consisting of polyolefin, polyfluorocarbon, and polyamide, and an ion exchange group introduced into the filter can be used. Two or more types of filters in the same material group.

•過濾器的細孔結構 作為過濾器的細孔結構,並無特別限制,可以依據被純化物中的成分而適當地選擇。在本說明書中,過濾器的細孔結構係指細孔直徑分佈、過濾器中的細孔的位置分佈及細孔的形狀等,典型地,能夠藉由過濾器之製造方法來進行控制。 例如,若對樹脂等的粉末進行燒結來形成則可獲得多孔膜、以及若藉由電紡絲(electrospinning)、電吹(electroblowing)及熔吹(meltblowing)等方法來形成則可獲得纖維膜。該等的細孔結構分別不同。 •Filter pore structure The pore structure of the filter is not particularly limited and can be appropriately selected depending on the components in the object to be purified. In this specification, the pore structure of the filter refers to the pore diameter distribution, the position distribution of the pores in the filter, the shape of the pores, etc., and can typically be controlled by a manufacturing method of the filter. For example, a porous membrane can be obtained by sintering powder of a resin or the like, and a fiber membrane can be obtained by forming it by methods such as electrospinning, electroblowing, and meltblowing. The pore structures of these are respectively different.

“多孔膜”係指保持凝膠、粒子、膠體、細胞及低聚物等被純化物中的成分,但實質上小於細孔的成分通過細孔之膜。有時基於多孔膜的被純化物中的成分的保持依賴於動作條件,例如面速度、界面活性劑的使用、pH及該等的組合,且有可能依賴於多孔膜的孔徑、結構及應被去除之粒子的尺寸及結構(硬質粒子或凝膠等)。"Porous membrane" refers to a membrane that retains components in the object to be purified, such as gels, particles, colloids, cells, and oligomers, but allows components that are substantially smaller than the pores to pass through the pores. Sometimes the retention of components in the purified object based on a porous membrane depends on operating conditions, such as surface speed, use of surfactants, pH and combinations thereof, and may also depend on the pore size, structure and should be used of the porous membrane. The size and structure of the particles to be removed (hard particles or gel, etc.).

在被純化物含有帶負電之粒子之情況下,為了去除這樣的粒子,聚醯胺製過濾器發揮非篩膜的功能。典型的非篩膜包括尼龍-6膜及尼龍-6,6膜等尼龍膜,但並不限制於該等。 另外,本說明書中所使用之基於“非篩”之保持機構係指由與過濾器的壓力降低或細孔徑無關之妨礙、擴散及吸附等機構而產生之保持。 When the object to be purified contains negatively charged particles, the polyamide filter functions as a non-sieve membrane in order to remove such particles. Typical non-sieve membranes include nylon membranes such as nylon-6 membrane and nylon-6,6 membrane, but are not limited to these. In addition, the retention mechanism based on "non-sieve" used in this specification refers to retention by mechanisms such as obstruction, diffusion, and adsorption that are not related to the pressure drop of the filter or the pore size.

非篩保持包括與過濾器的壓力降低或過濾器的細孔徑無關地去除被純化物中的去除對象粒子之妨礙、擴散及吸附等保持機構。粒子在過濾器表面上的吸附例如能夠藉由分子間的範德華及靜電力等來介導。在具有蛇行狀的通路之非篩膜層中移動之粒子在無法充分迅速地改變方向以免與非篩膜接觸時產生妨礙效果。基於擴散的粒子輸送係由形成粒子與過濾材料碰撞之一定的概率之、主要由小粒子的無規運動或布朗運動產生。當在粒子與過濾器之間不存在排斥力時,非篩保持機構能夠變得活躍。Non-sieve holding includes holding mechanisms such as obstruction, diffusion, and adsorption that remove removal target particles in the object to be purified regardless of the pressure drop of the filter or the pore size of the filter. The adsorption of particles on the filter surface can be mediated, for example, by van der Waals and electrostatic forces between molecules. Particles moving in the non-sieve membrane layer with the serpentine-like passages have a hindering effect when they cannot change direction quickly enough to avoid contact with the non-sieve membrane. Particle transport based on diffusion is formed by a certain probability of collision between particles and filter materials, mainly caused by the random motion or Brownian motion of small particles. The non-sieve retention mechanism can become active when there are no repulsive forces between the particles and the filter.

UPE(超高分子量聚乙烯)過濾器典型地為篩膜。篩膜主要係指通過篩保持機構捕獲粒子之膜或為了通過篩保持機構捕獲粒子而被最優化之膜。 作為篩膜的典型例,包括聚四氟乙烯(PTFE)膜和UPE膜,但並不限制於該等。 另外,“篩保持機構”係指保持去除對象粒子大於多孔膜的細孔徑的結果。關於篩保持力,可藉由形成濾餅(膜的表面上的成為去除對象之粒子的凝聚)來提高。濾餅有效地發揮二級過濾器的功能。 UPE (ultra high molecular weight polyethylene) filters are typically mesh membranes. Screen membrane mainly refers to a membrane that captures particles through a screen holding mechanism or a membrane that is optimized to capture particles through a screen holding mechanism. Typical examples of sieve membranes include, but are not limited to, polytetrafluoroethylene (PTFE) membranes and UPE membranes. In addition, the "sieve holding mechanism" refers to the result of holding particles to be removed larger than the pore size of the porous membrane. The screen retention force can be improved by forming a filter cake (aggregation of particles to be removed on the surface of the membrane). The filter cake effectively functions as a secondary filter.

纖維膜的材質只要為能夠形成纖維膜之聚合物,則並無特別限制。作為聚合物,例如可舉出聚醯胺等。作為聚醯胺,例如可舉出尼龍6及尼龍6,6等。作為形成纖維膜之聚合物,可以為聚(醚碸)。當纖維膜位於多孔膜的一次側時,纖維膜的表面能比位於二次側的多孔膜的材質之聚合物高為較佳。作為這樣的組合,例如可舉出纖維膜的材料為尼龍且多孔膜為聚乙烯(UPE)之情況。The material of the fiber membrane is not particularly limited as long as it is a polymer capable of forming a fiber membrane. Examples of the polymer include polyamide and the like. Examples of polyamide include nylon 6, nylon 6,6, and the like. As the polymer forming the fiber membrane, poly(ether ether) may be used. When the fiber membrane is located on the primary side of the porous membrane, the surface energy of the fiber membrane is preferably higher than the polymer material of the porous membrane located on the secondary side. An example of such a combination is a case where the material of the fiber membrane is nylon and the porous membrane is polyethylene (UPE).

作為纖維膜的製造方法並無特別限制,能夠使用公知的方法。作為纖維膜之製造方法,例如可舉出電紡絲、電吹及熔噴等。There is no particular limitation on the method for producing the fiber membrane, and a known method can be used. Examples of methods for producing fiber membranes include electrospinning, electroblowing, melt blowing, and the like.

作為多孔膜(例如,包含UPE及PTFE等之多孔膜)的細孔結構並無特別限制,作為細孔的形狀,例如可舉出蕾絲狀、串狀及節點狀等。 多孔膜中之細孔的大小分佈和該膜中之位置分佈並無特別限制。可以為大小分佈更小且該膜中之分佈位置對稱。又,可以為大小分佈更大,且該膜中的分佈位置不對稱(還將上述膜稱為“非對稱多孔膜”。)。非對稱多孔膜中,孔的大小在膜中發生變化,典型地,孔徑從膜的一個表面向膜的另一個表面變大。此時,將孔徑大的細孔多的一側的表面稱為“開放(open)側”,將孔徑小的細孔多的一側的表面稱為“密集(tite)側”。 又,作為非對稱多孔膜,例如可舉出細孔的大小在膜的厚度內的某一位置上為最小之膜(將其亦稱為“沙漏形狀”。)。 The pore structure of the porous membrane (for example, a porous membrane containing UPE, PTFE, etc.) is not particularly limited. Examples of the shape of the pores include lace-like, string-like, node-like, and the like. The size distribution of pores in the porous film and the position distribution in the film are not particularly limited. The size distribution can be smaller and the distribution position in the film symmetrical. In addition, the size distribution may be larger, and the distribution position in the membrane may be asymmetric (the above-mentioned membrane is also called an "asymmetric porous membrane."). In asymmetric porous membranes, the size of the pores changes within the membrane, typically with the pore size becoming larger from one surface of the membrane to the other surface of the membrane. At this time, the surface on the side with large pores and many pores is called the "open side", and the surface on the side with small pores and many pores is called the "tite side". An example of an asymmetric porous membrane is a membrane in which the size of the pores is smallest at a certain position within the thickness of the membrane (this is also called an "hourglass shape").

若使用非對稱多孔膜將一次側設為更大尺寸的孔,換言之,若將一次側設為開放側,則使其產生預過濾效果。If an asymmetric porous membrane is used and the primary side is made into a larger pore size, in other words, if the primary side is made into an open side, it will produce a pre-filtration effect.

多孔膜可以包含PESU(聚醚碸)、PFA(全氟烷氧基烷烴、四氟化乙烯與全氟烷氧基烷烴的共聚物)、聚醯胺及聚烯烴等熱塑性聚合物,亦可以包含聚四氟乙烯等。 其中,作為多孔膜的材料,超高分子量聚乙烯為較佳。超高分子量聚乙烯係指具有極長的鏈之熱塑性聚乙烯,分子量為百萬以上、典型地200~600萬為較佳。 The porous membrane can contain thermoplastic polymers such as PESU (polyether styrene), PFA (copolymer of perfluoroalkoxyalkane, tetrafluoroethylene and perfluoroalkoxyalkane), polyamide and polyolefin, and can also contain PTFE, etc. Among them, as the material of the porous membrane, ultra-high molecular weight polyethylene is preferred. Ultra-high molecular weight polyethylene refers to thermoplastic polyethylene with extremely long chains, with a molecular weight of one million or more, typically 2 to 6 million.

作為在過濾步驟中使用之過濾器,可以使用細孔結構不同的2種以上的過濾器,亦可以併用多孔膜及纖維膜的過濾器。作為具體例,可舉出使用尼龍纖維膜的過濾器和UPE多孔膜的過濾器之方法。As the filter used in the filtration step, two or more types of filters with different pore structures may be used, or a porous membrane and a fiber membrane may be used in combination. Specific examples include a method using a nylon fiber membrane filter and a UPE porous membrane filter.

又,關於過濾器,在使用之前充分清洗之後使用為較佳。 在使用未清洗的過濾器(或未進行充分清洗之過濾器)之情況下,過濾器所含有之雜質容易進入藥液中。 Also, regarding the filter, it is best to wash it thoroughly before use. When an uncleaned filter (or a filter that has not been adequately cleaned) is used, impurities contained in the filter can easily enter the chemical solution.

如上所述,本發明的實施形態之過濾步驟可以為使被純化物通過選自包含過濾器的材料、細孔直徑及細孔結構之群組中之至少1種不同的2種以上的過濾器之多級過濾步驟。 又,可以使被純化物經複數次通過相同的過濾器,亦可以使被純化物經複數次通過相同種類的過濾器。 As described above, the filtration step in the embodiment of the present invention may be to pass the object to be purified through at least one different filter selected from the group consisting of filter material, pore diameter, and pore structure. multi-stage filtering steps. Furthermore, the object to be purified may be passed through the same filter a plurality of times, or the object to be purified may be passed through the same type of filter a plurality of times.

另外,在製備本發明的藥液之基礎上,作為過濾器,使用能夠選擇性地去除“Purasol SN 200nm”等金屬成分(尤其,金屬離子)之過濾器(金屬成分去除過濾器)為較佳。In addition, after preparing the chemical solution of the present invention, it is preferable to use a filter (metal component removal filter) that can selectively remove metal components (especially metal ions) such as "Purasol SN 200nm" .

作為在過濾步驟中使用之純化裝置的接液部(係指有可能與被純化物及藥液接觸之內壁面等)的材料,並無特別限制,但是由選自包含非金屬材料(氟系樹脂等)及經電解研磨之金屬材料(不鏽鋼等)之群組中之至少1種(以下,還將該等統稱為“耐腐蝕材料”。)形成為較佳。例如,所謂製造罐的接液部由耐腐蝕材料形成,可舉出製造罐本身由耐腐蝕材料形成、或製造罐的內壁面等被耐腐蝕材料被覆之情形。The material for the wetted part of the purification device used in the filtration step (referring to the inner wall surface that may come into contact with the object to be purified and the chemical solution) is not particularly limited, but it must be selected from non-metallic materials (fluorine-based materials). It is preferable to form at least one of the group consisting of electrolytically ground metal materials (stainless steel, etc.) (hereinafter, these will also be collectively referred to as "corrosion-resistant materials".). For example, the liquid contact part of the production tank is formed of a corrosion-resistant material. The production tank itself is formed of a corrosion-resistant material, or the inner wall surface of the production tank is covered with a corrosion-resistant material.

作為上述非金屬材料,並無特別限制,能夠使用公知的材料。 作為非金屬材料,例如,可舉出選自包含聚乙烯樹脂、聚丙烯樹脂、聚乙烯-聚丙烯樹脂以及氟系樹脂(例如,四氟乙烯樹脂、四氟乙烯-全氟烷基乙烯基醚共聚合樹脂、四氟乙烯-六氟丙烯共聚合樹脂、四氟乙烯-乙烯共聚合樹脂、三氟氯乙烯-乙烯共聚合樹脂、偏二氟乙烯樹脂、三氟氯乙烯共聚合樹脂及氟乙烯樹脂等)之群組中之至少1種,但並不限制於此。 There are no particular limitations on the non-metallic material, and known materials can be used. Examples of the non-metal material include polyethylene resins, polypropylene resins, polyethylene-polypropylene resins, and fluorine-based resins (eg, tetrafluoroethylene resin, tetrafluoroethylene-perfluoroalkyl vinyl ether). Copolymer resin, tetrafluoroethylene-hexafluoropropylene copolymer resin, tetrafluoroethylene-ethylene copolymer resin, chlorotrifluoroethylene-ethylene copolymer resin, vinylidene fluoride resin, chlorotrifluoroethylene copolymer resin and vinyl fluoride resin, etc.), but is not limited to this.

作為上述金屬材料,並無特別限制,能夠使用公知的材料。 作為金屬材料,例如,可舉出鉻及鎳的含量的合計相對於金屬材料總質量超過25質量%之金屬材料,其中,30質量%以上為更佳。作為金屬材料中的鉻及鎳的含量的合計的上限值,並無特別限制,但通常係90質量%以下為較佳。 作為金屬材料,例如,可舉出不鏽鋼及鎳-鉻合金等。 The metal material is not particularly limited, and known materials can be used. Examples of the metal material include metal materials in which the total content of chromium and nickel exceeds 25% by mass based on the total mass of the metal material. Among them, 30% by mass or more is more preferred. The upper limit of the total content of chromium and nickel in the metal material is not particularly limited, but is generally preferably 90% by mass or less. Examples of metal materials include stainless steel, nickel-chromium alloy, and the like.

作為不銹鋼並無特別限制,能夠使用公知的不銹鋼。其中,含有8質量%以上的鎳之合金為較佳,含有8質量%以上的鎳之奧氏體系不銹鋼為更佳。作為奧氏體系不鏽鋼,例如可舉出SUS(Steel Use Stainless:鋼用不鏽鋼)304(Ni含量為8質量%,Cr含量為18質量%)、SUS304L(Ni含量為9質量%,Cr含量為18質量%)、SUS316(Ni含量為10質量%,Cr含量為16質量%)及SUS316L(Ni含量為12質量%,Cr含量為16質量%)等。The stainless steel is not particularly limited, and known stainless steel can be used. Among them, an alloy containing 8 mass % or more of nickel is preferable, and an austenitic stainless steel containing 8 mass % or more of nickel is more preferable. Examples of austenitic stainless steel include SUS (Steel Use Stainless) 304 (Ni content: 8 mass%, Cr content: 18 mass%), SUS304L (Ni content: 9 mass%, Cr content: 18% by mass), SUS316 (Ni content is 10% by mass, Cr content is 16% by mass) and SUS316L (Ni content is 12% by mass, Cr content is 16% by mass), etc.

作為鎳-鉻合金,並無特別限制,能夠使用公知的鎳-鉻合金。其中,鎳含量係40~75質量%,且鉻含量係1~30質量%的鎳-鉻合金為較佳。 作為鎳-鉻合金,例如,可舉出赫史特合金(產品名稱,以下相同。)、蒙乃爾合金(產品名稱,以下相同)及英高鎳合金(產品名稱,以下相同)。更具體而言,可舉出赫史特合金C-276(Ni含量為63質量%、Cr含量為16質量%)、赫史特合金-C(Ni含量為60質量%、Cr含量為17質量%)及赫史特合金C-22(Ni含量為61質量%、Cr含量為22質量%)。 又,除了上述之合金以外,鎳-鉻合金依需要還可以含有硼、矽、鎢、鉬、銅及鈷等。 The nickel-chromium alloy is not particularly limited, and a known nickel-chromium alloy can be used. Among them, a nickel-chromium alloy with a nickel content of 40 to 75 mass% and a chromium content of 1 to 30 mass% is preferred. Examples of nickel-chromium alloys include Hoechst alloy (product name, the same below), Monel alloy (product name, the same below), and Inconel alloy (product name, the same below). More specifically, Hoechst Alloy C-276 (Ni content: 63 mass%, Cr content: 16 mass%), Hoechst Alloy-C (Ni content: 60 mass%, Cr content: 17 mass%) %) and Hoechst Alloy C-22 (Ni content: 61 mass%, Cr content: 22 mass%). In addition, in addition to the above-mentioned alloys, the nickel-chromium alloy may also contain boron, silicon, tungsten, molybdenum, copper, cobalt, etc. as needed.

對金屬材料進行電解研磨之方法並無特別限制,能夠使用公知的方法。例如,能夠使用日本特開2015-227501號公報的[0011]~[0014]段及日本特開2008-264929號公報的[0036]~[0042]段等中所記載之方法。The method of electrolytic polishing of metal materials is not particularly limited, and known methods can be used. For example, the methods described in paragraphs [0011] to [0014] of Japanese Patent Application Laid-Open No. 2015-227501 and paragraphs [0036] to [0042] of Japanese Patent Application Laid-Open No. 2008-264929 can be used.

關於金屬材料,推測藉由電解研磨而表面的鈍化層中的鉻的含量變得比母相的鉻的含量多。因此,推測若使用接液部由經電解研磨之金屬材料形成之純化裝置,則含金屬的粒子難以流出到被純化液中。 另外,金屬材料亦可以進行拋光。拋光的方法並無特別限制,能夠使用公知的方法。精拋中所使用之研磨粒的尺寸並無特別限制,但在金屬材料的表面的凹凸容易變得更小之方面而言,#400以下為較佳。另外,拋光在電解研磨之前進行為較佳。 Regarding metal materials, it is presumed that the chromium content in the passivation layer on the surface becomes larger than the chromium content in the matrix due to electrolytic polishing. Therefore, it is presumed that if a purification device in which the liquid contact part is made of an electrolytically polished metal material is used, the metal-containing particles will be less likely to flow out into the liquid to be purified. In addition, metal materials can also be polished. The polishing method is not particularly limited, and a known method can be used. The size of the abrasive grains used for fine polishing is not particularly limited, but since the unevenness on the surface of the metal material tends to become smaller, #400 or less is preferred. In addition, polishing is preferably performed before electrolytic polishing.

(其他步驟) 藥液之製造方法還可以具有除了過濾步驟以外的步驟。作為除了過濾步驟以外的步驟,例如,可舉出蒸餾步驟、反應步驟及除電步驟等。 (additional steps) The method of producing a medical solution may include steps other than the filtration step. Examples of steps other than the filtration step include a distillation step, a reaction step, a static removal step, and the like.

(蒸餾步驟) 蒸餾步驟為對含有有機溶劑之被純化物進行蒸餾而獲得經蒸餾之被純化物之步驟。作為對被純化物進行蒸餾之方法,並無特別限制,能夠使用公知的方法。典型地,可舉出在供於過濾步驟之純化裝置的一次側配置蒸餾塔,且將經蒸餾之被純化物導入到製造罐中之方法。 此時,蒸餾塔的接液部,並無特別限制,但是由已說明之耐腐蝕材料形成為較佳。 (distillation step) The distillation step is a step of distilling a purified substance containing an organic solvent to obtain a distilled purified substance. There is no particular limitation on the method of distilling the object to be purified, and a known method can be used. Typically, there is a method in which a distillation column is disposed on the primary side of the purification device used in the filtration step, and the distilled purified product is introduced into a production tank. At this time, the liquid contact part of the distillation tower is not particularly limited, but it is preferably formed of the corrosion-resistant material as described above.

(反應步驟) 反應步驟為使原料進行反應而產生作為反應物之含有有機溶劑之被純化物之步驟。作為產生被純化物之方法,並無特別限制,能夠使用公知的方法。典型地,可舉出在供於過濾步驟之純化裝置的製造罐(或蒸餾塔)的一次側配置反應槽,且將反應物導入到製造罐(或蒸餾塔)中之方法。 此時,作為製造罐的接液部,並無特別限制,但是由已說明之耐腐蝕材料形成為較佳。 (reaction steps) The reaction step is a step of reacting raw materials to produce a purified product containing an organic solvent as a reactant. There is no particular limitation on the method for producing the purified product, and a known method can be used. Typically, a reaction tank is disposed on the primary side of a production tank (or distillation column) of a purification device used in the filtration step, and a reactant is introduced into the production tank (or distillation column). At this time, the liquid contact part of the manufacturing tank is not particularly limited, but it is preferably formed of the corrosion-resistant material as described above.

(除電步驟) 除電步驟為對被純化物進行除電而使被純化物的帶電電位下降之步驟。 作為除電方法並無特別限制,能夠使用公知的除電方法。作為除電方法,例如可舉出使被純化物與導電性材料接觸之方法。 作為使被純化物與導電性材料接觸之接觸時間係0.001~60秒為較佳,0.001~1秒為更佳,0.01~0.1秒為進一步較佳。作為導電性材料,可舉出不銹鋼、金、鉑、金剛石及玻璃碳。 作為使被純化物與導電性材料接觸之方法,例如可舉出如下方法等:將由導電性材料形成且經接地之網格(mesh)配置於管路內,並使被純化物在其中通過。 (Electrification removal step) The destaticizing step is a step of decharging the object to be purified to reduce the charging potential of the object to be purified. There is no particular limitation on the static elimination method, and a known static elimination method can be used. An example of the method of removing electricity is a method of bringing the object to be purified into contact with a conductive material. The contact time for bringing the object to be purified into contact with the conductive material is preferably 0.001 to 60 seconds, more preferably 0.001 to 1 second, and further preferably 0.01 to 0.1 seconds. Examples of conductive materials include stainless steel, gold, platinum, diamond, and glassy carbon. An example of a method for bringing the object to be purified into contact with a conductive material is to arrange a grounded mesh made of a conductive material in a pipeline and allow the object to be purified to pass therethrough.

關於被純化物的純化,隨附於其之容器的開封、容器及裝置的清洗、溶液的收容、以及分析等全部在無塵室中進行為較佳。無塵室係在國際標準化組織所規定之國際標準ISO14644-1:2015中規定之等級4以上的清淨度的無塵室為較佳。具體而言,滿足ISO等級1、ISO等級2、ISO等級3及ISO等級4中的任一個為較佳,滿足ISO等級1或ISO等級2為更佳,滿足ISO等級1為進一步較佳。Regarding the purification of the object to be purified, it is preferable to perform all the opening of the accompanying container, cleaning of the container and equipment, storage of the solution, and analysis in a clean room. The clean room is preferably a clean room with a cleanliness level of level 4 or above specified in the international standard ISO14644-1:2015 stipulated by the International Organization for Standardization. Specifically, it is more preferable that it satisfies any one of ISO level 1, ISO level 2, ISO level 3, and ISO level 4, it is more preferred that it satisfies ISO level 1 or ISO level 2, and it is still more preferred that it satisfies ISO level 1.

作為藥液的保管溫度,並無特別限制,但是在藥液中以少量含有之雜質等難以溶出,其結果,可獲得更優異之本發明的效果之方面而言,作為保管溫度係4℃以上為較佳。The storage temperature of the medical solution is not particularly limited. However, since impurities and the like contained in a small amount in the medical solution are difficult to dissolve and, as a result, more excellent effects of the present invention can be obtained, the storage temperature is 4°C or higher. For better.

<藥液收容體> 利用上述純化方法製造之藥液可以收容於容器中而保管至使用時為止。 將這樣的容器和收容於容器中之藥液統稱為藥液收容體。從所保管之藥液收容體中取出藥液後進行使用。 <Medical liquid container> The medicinal solution produced by the above purification method can be stored in a container until use. Such a container and the medical solution contained in the container are collectively referred to as a medical solution container. Take out the medicinal solution from the stored medicinal solution container and use it.

作為保管上述藥液之容器,對於半導體器件製造用途,容器內的潔淨度高,且雜質的溶出少為較佳。 作為能夠使用之容器,具體而言,可舉出AICELLO CHEMICAL CO., LTD.製造之“Clean Bottle”系列及KODAMA PLASTICS CO.,LTD.製造之“Pure Bottle”等,但並不限制於該等。 As a container for storing the above-mentioned chemical solution, for semiconductor device manufacturing purposes, it is preferable that the cleanliness inside the container is high and the elution of impurities is small. Specific examples of containers that can be used include the "Clean Bottle" series manufactured by AICELLO CHEMICAL CO., LTD. and the "Pure Bottle" manufactured by KODAMA PLASTICS CO., LTD., but are not limited thereto. .

作為容器,以防止向藥液中之雜質混入(污染)為目的而使用將容器內壁設為基於6種樹脂之6層結構之多層瓶或設為基於6種樹脂之7層結構之多層瓶亦為較佳。作為該等容器,例如可舉出日本特開2015-123351號公報中所記載的容器。As a container, a multi-layer bottle with a 6-layer structure based on 6 types of resins or a multi-layer bottle with a 7-layer structure based on 6 types of resins are used for the purpose of preventing the mixing (contamination) of impurities into the medicinal solution. It is also better. Examples of such containers include those described in Japanese Patent Application Laid-Open No. 2015-123351.

該容器的接液部可以為已說明之耐腐蝕材料(較佳為經電解研磨之不鏽鋼或氟系樹脂)或玻璃。可獲得更優異之本發明的效果之方面而言,接液部的90%以上的面積由上述材料形成為較佳,整個接液部由上述材料形成為更佳。The liquid-contacting part of the container may be made of the corrosion-resistant material already described (preferably electrolytically ground stainless steel or fluorine-based resin) or glass. In order to obtain more excellent effects of the present invention, it is preferable that more than 90% of the area of the liquid contact part is formed of the above-mentioned material, and it is even more preferable that the entire liquid contact part is formed of the above-mentioned material.

藥液收容體的、容器內的孔隙率係2~80體積%為較佳,2~50體積%為更佳,5~30體積%為進一步較佳。 另外,上述孔隙率依據式(1)來進行計算。 式(1):孔隙率={1-(容器內的藥液的體積/容器的容器體積)}×100 所謂上述容器體積,與容器的內部容積(容量)的含義相同。 將孔隙率設定在該範圍內,藉此能夠藉由限制雜質等的污染來確保保管穩定性。 [實施例] The porosity of the chemical liquid container in the container is preferably 2 to 80 volume %, more preferably 2 to 50 volume %, and still more preferably 5 to 30 volume %. In addition, the above-mentioned porosity is calculated based on equation (1). Formula (1): Porosity = {1-(Volume of the liquid in the container/Volume of the container)}×100 The volume of the container mentioned above has the same meaning as the internal volume (capacity) of the container. By setting the porosity within this range, storage stability can be ensured by limiting contamination by impurities and the like. [Example]

以下,基於實施例對本發明進行進一步詳細的說明。以下實施例所示之材料、使用量、比例、處理內容及處理步驟等,只要不脫離本發明的主旨便能夠適當地變更。從而,本發明的範圍不應被以下所示之實施例限定地解釋。Hereinafter, the present invention will be described in further detail based on examples. The materials, usage amounts, ratios, treatment contents, treatment steps, etc. shown in the following examples can be appropriately changed as long as they do not deviate from the gist of the present invention. Therefore, the scope of the present invention should not be construed to be limited by the examples shown below.

又,在製備實施例及比較例的藥液時,容器的處理、藥液的製備、填充、保管及分析測量全部在滿足ISO等級2或1之無塵室中進行。In addition, when preparing the chemical solutions of Examples and Comparative Examples, container handling, preparation, filling, storage, and analysis and measurement of the chemical solution were all performed in a clean room that satisfies ISO Class 2 or 1.

(過濾器) 作為過濾器,使用了以下過濾器。 •“Purasol SN200nm”:UPE膜(材質)Entegris,Inc.製造,孔徑為200nm •“PP 200nm”:聚丙烯製過濾器、Entegris,Inc.製造,孔徑為200nm •“Purasol SP200nm”:UPE膜(材質)Entegris,Inc.製造,孔徑為200nm •“Octolex 5nm”:UPE製Nylon過濾器接枝、Entegris,Inc.製造,孔徑為5nm •“IEX 15nm”:離子交換樹脂過濾器、Entegris,Inc.製造,孔徑為15nm •“IEX 16nm”:離子交換樹脂製過濾器、Entegris,Inc.製造,孔徑為16nm •“IEX 50nm”:離子交換樹脂過濾器、Entegris,Inc.製造,孔徑為50nm •“IEX 200nm”:離子交換樹脂過濾器、Entegris,Inc.製造,孔徑為200nm •“PTFE 5nm”:聚四氟乙烯製過濾器,Entegris,Inc.製造,孔徑為5nm •“PTFE 7nm”:聚四氟乙烯製過濾器,Entegris,Inc.製造,孔徑為7nm •“PTFE 10nm”:聚四氟乙烯製過濾器,Entegris,Inc.製造,孔徑為10nm •“PTFE 20nm”:聚四氟乙烯製過濾器,Entegris,Inc.製造,孔徑為20nm •“Nylon 5nm”:尼龍製過濾器,Pall公司製造,孔徑為5nm •“UPE 1nm”:超高分子量聚乙烯製過濾器,Pall公司製造,孔徑為1nm •“UPE 3nm”:超高分子量聚乙烯製過濾器,Pall公司製造,孔徑為3nm •“UPE 5nm”:超高分子量聚乙烯製過濾器,Pall公司製造,孔徑為5nm (filter) As filters, the following filters were used. • "Purasol SN200nm": UPE membrane (material) manufactured by Entegris, Inc., pore diameter is 200nm •"PP 200nm": Polypropylene filter, manufactured by Entegris, Inc., pore size is 200nm •"Purasol SP200nm": UPE membrane (material) manufactured by Entegris, Inc., pore diameter 200nm • "Octolex 5nm": Nylon filter grafted from UPE, manufactured by Entegris, Inc., pore size is 5nm •"IEX 15nm": Ion exchange resin filter, manufactured by Entegris, Inc., pore size is 15nm •"IEX 16nm": Ion exchange resin filter, manufactured by Entegris, Inc., pore size is 16nm •"IEX 50nm": Ion exchange resin filter, manufactured by Entegris, Inc., pore size is 50nm •"IEX 200nm": Ion exchange resin filter, manufactured by Entegris, Inc., pore size is 200nm • "PTFE 5nm": polytetrafluoroethylene filter, manufactured by Entegris, Inc., pore size 5nm • “PTFE 7nm”: polytetrafluoroethylene filter, manufactured by Entegris, Inc., pore size 7nm • “PTFE 10nm”: polytetrafluoroethylene filter, manufactured by Entegris, Inc., pore size 10nm • “PTFE 20nm”: polytetrafluoroethylene filter, manufactured by Entegris, Inc., pore size 20nm •“Nylon 5nm”: Nylon filter, manufactured by Pall Company, pore size is 5nm •"UPE 1nm": ultra-high molecular weight polyethylene filter, manufactured by Pall Company, pore size 1nm •"UPE 3nm": Ultra-high molecular weight polyethylene filter, manufactured by Pall Company, with a pore size of 3nm •"UPE 5nm": Ultra-high molecular weight polyethylene filter, manufactured by Pall Company, with a pore size of 5nm

<被純化物> 為了製造實施例及比較例的藥液,使用了以下有機溶劑作為被純化物。 •CyHe:環己酮 •PGMEA:丙二醇單甲醚乙酸酯 •MIBC:4-甲基-2-戊醇 •nBA:乙酸丁酯 •EL:乳酸乙酯 •PC:碳酸丙二酯 •IPA:異丙醇 •PGMEE:丙二醇單乙醚 •PGMPE:丙二醇單丙醚 •CPN:環戊酮 又,表中的“原料1”~“原料8”表示各實施例及比較例中所使用之有機溶劑為來自於以下的廠商的購入品。 “原料1”:Honeywell公司 “原料2”:Toyo Gosei Co.,Ltd. “原料3”:KH Neochem Co.,Ltd. “原料4”:SHOWA DENKO K.K. “原料5”:KH Neochem Co.,Ltd. “原料6”:SANWAYUKA INDUSTRY CORPORATION “原料7”:CCP公司 “原料8”:BASF公司 <Purified substance> In order to produce the chemical solutions of Examples and Comparative Examples, the following organic solvents were used as purified substances. •CyHe: cyclohexanone •PGMEA: propylene glycol monomethyl ether acetate •MIBC: 4-methyl-2-pentanol •nBA: butyl acetate •EL: Ethyl lactate •PC: propylene carbonate •IPA: Isopropyl alcohol •PGMEE: propylene glycol monoethyl ether •PGMPE: propylene glycol monopropyl ether •CPN: cyclopentanone In addition, "raw materials 1" to "raw materials 8" in the table indicate that the organic solvents used in each example and comparative example were purchased from the following manufacturers. "Raw material 1": Honeywell Company "Raw material 2": Toyo Gosei Co.,Ltd. "Raw material 3": KH Neochem Co.,Ltd. "Raw Material 4": SHOWA DENKO K.K. "Raw material 5": KH Neochem Co.,Ltd. "Raw material 6": SANWAYUKA INDUSTRY CORPORATION "Raw material 7": CCP Company "Raw material 8": BASF Company

<容器> 作為容納藥液之容器,使用了下述容器。 •EP-SUS:接液部為經電解研磨之不鏽鋼之容器 •PFA:接液部被全氟烷氧基烷烴塗佈之容器 另外,藥液在各容器中的填充率為95體積%(孔隙率為5體積%)。 填充率藉由以下式來求出。 填充率=(藥液在容器內的體積/容器的容器體積)×100 <Container> As a container for containing the medical solution, the following containers were used. •EP-SUS: A container with the wetted part made of electrolytically ground stainless steel •PFA: Containers whose wetted parts are coated with perfluoroalkoxyalkanes In addition, the filling rate of the chemical solution in each container was 95% by volume (the porosity was 5% by volume). The filling rate is calculated by the following formula. Filling rate = (volume of medicinal solution in the container/container volume of the container) × 100

<純化步驟> 選擇選自上述被純化物中之1種,並進行了表1中所記載之蒸餾純化處理。 另外,表中的“蒸餾純化”欄的“有-1”表示實施了使用蒸餾塔(理論塔板數:15個塔板)之減壓蒸餾,“有-2”表示實施了2次使用蒸餾塔(理論塔板數:30個塔板)之減壓蒸餾,“有-3”表示實施了使用蒸餾塔(理論塔板數:8個塔板)之減壓蒸餾。 <Purification steps> One of the above-mentioned objects to be purified was selected, and the distillation purification treatment described in Table 1 was performed. In addition, "-1" in the "Distillation Purification" column in the table indicates that vacuum distillation using a distillation column (number of theoretical plates: 15 plates) was performed, and "-2" indicates that distillation was performed twice. For vacuum distillation of a column (number of theoretical plates: 30 plates), "Y-3" means that vacuum distillation using a distillation column (number of theoretical plates: 8 plates) was performed.

接著,將經蒸餾純化之被純化物儲存於儲存罐,依次將儲存於儲存罐之被純化物通液到表1中所記載的過濾器1~5而進行過濾,並儲存於儲存罐。 接著,實施了如下循環過濾處理:利用表1中所記載之過濾器6~7對儲存於儲存罐中之被純化物進行過濾,並使利用過濾器7進行過濾之後的被純化物在過濾器6的上游側進行循環,再次利用過濾器6~7進行過濾。 循環過濾處理之後,將藥液收容於容器中。 另外,針對實施例85~88,以水分量成為規定的值的方式,向藥液中添加了水。 Next, the purified substance that has been distilled and purified is stored in a storage tank. The purified substance stored in the storage tank is sequentially passed through the filters 1 to 5 listed in Table 1 to be filtered and stored in the storage tank. Next, the following circulation filtration process was performed: the purified substances stored in the storage tank were filtered using filters 6 to 7 listed in Table 1, and the purified substances filtered by filter 7 were filtered in the filter. The upstream side of 6 is circulated, and filters 6 to 7 are used for filtration again. After the circulating filtration process, the chemical solution is stored in a container. In addition, regarding Examples 85 to 88, water was added to the chemical solution so that the water content became a predetermined value.

另外,在上述之一系列的純化過程中,與被純化物接觸之各種裝置(例如,蒸餾塔、配管、儲存罐等)的接液部由經電解研磨之不鏽鋼構成。In addition, in the above series of purification processes, the liquid contact parts of various devices (for example, distillation towers, piping, storage tanks, etc.) that come into contact with the object to be purified are made of electrolytically polished stainless steel.

藉由下述所示之方法測量了藥液的有機成分及金屬成分的含量。The contents of organic components and metal components in the chemical solution were measured by the method shown below.

<金屬成分的含量> 關於藥液中的金屬成分(金屬離子、含金屬的粒子)的含量,藉由使用ICP-MS及SP-ICP-MS之方法進行了測量。 關於裝置,使用了以下裝置。 •製造商:PerkinElmer Co.,Ltd. •型號:NexION350S 在解析中使用了以下解析軟體。 •“SP-ICP-MS”專用Syngistix奈米應用模組 •Syngistix for ICP-MS軟體 但是,由於在SP-ICP-MS中無法測量10 nm以下的含金屬的粒子,因此使用了上述之特定方法。 <Content of metal components> The content of metal components (metal ions, metal-containing particles) in the chemical solution was measured using ICP-MS and SP-ICP-MS. Regarding the equipment, the following equipment was used. •Manufacturer: PerkinElmer Co.,Ltd. •Model: NexION350S The following analysis software was used in the analysis. •"SP-ICP-MS" dedicated Syngistix nano application module •Syngistix for ICP-MS software However, since metal-containing particles below 10 nm cannot be measured in SP-ICP-MS, the specific method described above was used.

<有機雜質的含量> 關於各種藥液中的有機雜質的含量,使用氣相層析法質量分析(GC/MS)裝置(Agilent公司製造,GC:7890B、MS:5977B EI/CI MSD K.K.)來進行了分析。 <Content of organic impurities> The contents of organic impurities in various chemical solutions were analyzed using a gas chromatography mass spectrometry (GC/MS) device (manufactured by Agilent, GC: 7890B, MS: 5977B EI/CI MSD K.K.).

<試驗> [預濕液或沖洗液] 藉由以下所示之方法,對所製造之藥液的、用作預濕液或沖洗液時的缺陷抑制性進行了評價。 首先,將藥液旋轉吐出到直徑300 mm的矽基板或直徑300 mm的附氧化矽膜的矽基板(表面被氧化矽膜覆蓋之矽基板),一邊使基板旋轉,一邊將0.5 cc的各藥液吐出到基板的表面。然後,對基板進行了旋轉乾燥。接著,使用KLA-Tencor Corporation公司製造的晶圓檢查裝置“SP-5”,對存在於塗佈藥液之後的基板上之缺陷數量進行了測量(將其設為測量值。)。 接著,使用EDAX(energy-dispersive X-ray spectroscopy),將缺陷的種類分類成金屬殘渣缺陷、複合物殘渣缺陷及色斑殘渣缺陷。金屬殘渣缺陷係指來自於金屬成分的殘渣,複合物殘渣缺陷係指來自於有機物與金屬成分的複合體的殘渣,色斑殘渣缺陷係指來自於有機物的殘渣。 另外,只要“Si上的金屬殘渣”及“SiO 2上的金屬殘渣”均為“D”以上,則較佳地用作預濕液或沖洗液。 <Test> [Pre-wetting liquid or rinsing liquid] The defect-inhibiting properties of the produced chemicals when used as pre-wetting liquid or rinsing liquid were evaluated by the method shown below. First, the chemical liquid is rotated and discharged onto a silicon substrate with a diameter of 300 mm or a silicon substrate with a silicon oxide film (a silicon substrate whose surface is covered with a silicon oxide film) with a diameter of 300 mm. While rotating the substrate, 0.5 cc of each drug is added. The liquid is discharged onto the surface of the substrate. Then, the substrate was spin-dried. Next, the number of defects existing on the substrate after the chemical solution was applied was measured using a wafer inspection device "SP-5" manufactured by KLA-Tencor Corporation (this was set as a measured value). Next, EDAX (energy-dispersive X-ray spectroscopy) is used to classify the types of defects into metal residue defects, composite residue defects, and stain residue defects. Metal residue defects refer to residues originating from metal components, composite residue defects refer to residues originating from a complex of organic matter and metal components, and stain residue defects refer to residues originating from organic matter. In addition, as long as both "metal residue on Si" and "metal residue on SiO2 " are "D" or above, it is preferably used as a prewetting liquid or a rinse liquid.

<個別評價(金屬殘渣缺陷、複合物殘渣缺陷、色斑殘渣缺陷)> A:所對應之缺陷數為20個/基板以下。 B:所對應之缺陷數大於20個/基板且為50個/基板以下。 C:所對應之缺陷數大於50個/基板且為100個/基板以下。 D:所對應之缺陷數大於100個/基板且為150個/基板以下。 E:所對應之缺陷數大於150個/基板。 <Individual evaluation (metal residue defects, composite residue defects, stain residue defects)> A: The corresponding number of defects is less than 20/substrate. B: The corresponding number of defects is greater than 20/substrate and less than 50/substrate. C: The corresponding number of defects is greater than 50/substrate and less than 100/substrate. D: The corresponding number of defects is greater than 100/substrate and less than 150/substrate. E: The corresponding number of defects is greater than 150/substrate.

[顯影液] 藉由以下所示之方法,對所製造之藥液的、用作顯影液之情況進行了評價。 首先,藉由以下所示之操作形成了光阻圖案。 在直徑300 mm矽基板或直徑300 mm的附氧化矽膜的矽基板塗佈後述之感光化射線性或感放射線性樹脂組成物,在100℃下經60秒鐘進行預烘烤(PB),從而形成了膜厚150 nm的光阻膜。 [Developer] The use of the produced chemical solution as a developer was evaluated by the method shown below. First, a photoresist pattern is formed by the operation shown below. Coat the photosensitive radiation or radiation-sensitive resin composition described below on a 300 mm diameter silicon substrate or a 300 mm diameter silicon substrate with a silicon oxide film, and pre-bake (PB) at 100°C for 60 seconds. Thus, a photoresist film with a film thickness of 150 nm was formed.

(感光化射線性或感放射線性樹脂組成物) 酸分解性樹脂(由下述式表示之樹脂(重量平均分子量(Mw):7500):各重複單元中所記載之數值表示莫耳%。):100質量份 (Photosensitive radiation or radiation-sensitive resin composition) Acid-decomposable resin (resin represented by the following formula (weight average molecular weight (Mw): 7500): the numerical value described in each repeating unit represents mol%.): 100 parts by mass

[化1] [Chemical 1]

下述所示之光酸產生劑:8質量份Photoacid generator shown below: 8 parts by mass

[化2] [Chemicalization 2]

下述所示之淬滅劑:5質量份(質量比從左依次設為0.1:0.3:0.3:0.2。)。另外,在下述淬滅劑中,聚合物類型的淬滅劑的重量平均分子量(Mw)為5000。又,各重複單元中所記載之數值表示莫耳比。The quenching agent shown below: 5 parts by mass (the mass ratio is 0.1:0.3:0.3:0.2 from the left.). In addition, among the quenching agents described below, the weight average molecular weight (Mw) of the polymer type quenching agent is 5,000. In addition, the numerical value described in each repeating unit represents the molar ratio.

[化3] [Chemical 3]

下述所示之疏水性樹脂:4質量份(質量比從左依次為0.5:0.5。)。另外,下述疏水性樹脂中,左側的疏水性樹脂的重量平均分子量(Mw)為7000,右側的疏水性樹脂的重量平均分子量(Mw)為8000。另外,在各疏水性樹脂中,各重複單元中所記載之數值表示莫耳比。Hydrophobic resin shown below: 4 parts by mass (mass ratio from left to right is 0.5:0.5.). Among the hydrophobic resins described below, the hydrophobic resin on the left has a weight average molecular weight (Mw) of 7,000, and the hydrophobic resin on the right has a weight average molecular weight (Mw) of 8,000. In addition, in each hydrophobic resin, the numerical value described in each repeating unit represents a molar ratio.

[化4] [Chemical 4]

溶劑: PGMEA(丙二醇單甲醚乙酸酯):3質量份 環己酮:600質量份 γ-BL(γ-丁內酯):100質量份 Solvent: PGMEA (propylene glycol monomethyl ether acetate): 3 parts by mass Cyclohexanone: 600 parts by mass γ-BL (γ-butyrolactone): 100 parts by mass

對於形成有光阻膜之晶圓,使用ArF準分子雷射掃描儀(Numerical Aperture(數值孔徑):0.75),以25 mJ/cm 2進行了圖案曝光。然後,在120℃的條件下加熱了60秒鐘。接著,用各顯影液(藥液)經30秒鐘進行了覆液顯影。接著,使晶圓以4000 rpm的轉速旋轉30秒鐘而形成了負型光阻圖案。之後,將所得到之負型光阻圖案在200℃下加熱了300秒鐘。經由上述步驟,獲得了線/空間為1:1的L/S圖案(平均圖案寬度:45 nm)。 所得到之樣品的空間部中,依據上述方法,對上述之金屬殘渣缺陷、複合物殘渣缺陷及色斑殘渣缺陷的有無進行了評價。 The wafer with the photoresist film formed on it was pattern-exposed using an ArF excimer laser scanner (Numerical Aperture (numerical aperture): 0.75) at 25 mJ/cm 2 . Then, it was heated at 120°C for 60 seconds. Next, liquid development was performed for 30 seconds using each developing solution (chemical solution). Next, the wafer was rotated at 4000 rpm for 30 seconds to form a negative photoresist pattern. After that, the obtained negative photoresist pattern was heated at 200°C for 300 seconds. Through the above steps, an L/S pattern with a line/space ratio of 1:1 was obtained (average pattern width: 45 nm). In the space portion of the obtained sample, the presence or absence of the above-mentioned metal residue defects, composite residue defects, and stain residue defects was evaluated based on the above method.

另外,各實施例中,各過濾器之間的壓力差為0.01~0.03 MPa。 表1中,“用途”欄的“用途1”係指將各實施例及比較例中所記載之藥液用作預濕液及沖洗液而實施了上述試驗。“用途”欄的“用途2”係指將各實施例及比較例中所記載之藥液用作顯影液而實施了上述試驗。 另外,表中,“Si上的金屬殘渣”中示出矽基板上的金屬殘渣缺陷的評價結果,“Si上的複合物殘渣”中示出矽基板上的複合物殘渣缺陷的評價結果,“Si上的色斑殘渣”中示出矽基板上的色斑殘渣缺陷的評價結果,“SiO 2上的金屬殘渣”中示出附氧化矽膜的矽基板上的金屬殘渣缺陷的評價結果,“SiO 2上的複合物殘渣”中示出附氧化矽膜的矽基板上的複合物殘渣缺陷的評價結果。 In addition, in each embodiment, the pressure difference between the filters is 0.01 to 0.03 MPa. In Table 1, "Application 1" in the "Application" column means that the above-mentioned test was carried out using the chemical liquid described in each example and comparative example as a prewetting liquid and a flushing liquid. "Use 2" in the "Application" column means that the chemical solution described in each Example and Comparative Example was used as a developer and the above-mentioned test was carried out. In addition, in the table, "Metal residue on Si" shows the evaluation results of metal residue defects on the silicon substrate, "Composite residue on Si" shows the evaluation results of the composite residue defects on the silicon substrate, ""Color stain residue on Si" shows the evaluation results of stain residue defects on silicon substrates, and "Metal residue on SiO 2 " shows the evaluation results of metal residue defects on silicon substrates with silicon oxide films, " The evaluation results of composite residue defects on a silicon substrate with a silicon oxide film are shown in "Composite Residue on SiO2 ".

表1中。“氧化Ti粒子/Ti離子”欄表示氧化鈦粒子的含量與鈦離子的含量之質量比。“Ti離子量(質量ppt)”欄表示相對於藥液總質量之鈦離子的含量(質量ppt)。“氧化Fe粒子/Fe離子”欄表示氧化鐵粒子的含量與鐵離子的含量之質量比。“Fe離子量(質量ppt)”欄表示相對於藥液總質量之鐵離子的含量(質量ppt)。“氧化Al粒子/Al離子”欄表示氧化鋁粒子的含量與鋁離子的含量之質量比。“Al離子量(質量ppt)”欄表示相對於藥液總質量之鋁離子的含量(質量ppt)。“氧化Ti粒子比例(質量%)”欄表示相對於金屬成分中的鈦成分的含量之氧化鈦粒子的含量(質量%)。“氧化Fe粒子比例(質量%)”欄表示相對於金屬成分中的鐵成分的含量之氧化鐵粒子的含量(質量%)。“氧化Al粒子比例(質量%)”欄表示相對於金屬成分中的鋁成分的含量之氧化鋁粒子的含量(質量%)。“0.5-17 nm的氧化Ti粒子的比例(質量%)”欄表示在氧化鈦粒子中作為粒徑0.5~17 nm之粒子的比例(質量%)。“0.5-17 nm的氧化Fe粒子的比例(質量%)”欄表示在氧化鐵粒子中作為粒徑0.5~17 nm之粒子的比例(質量%)。“0.5-17 nm的氧化Al粒子的比例(質量%)”欄表示在氧化鋁粒子中作為粒徑0.5~17 nm之粒子的比例(質量%)。“氧化Cu粒子比例(質量%)”欄表示相對於金屬成分中的銅成分的含量之氧化銅粒子的含量(質量%)。“0.5-17 nm的氧化Cu粒子的比例(質量%)”欄表示在氧化銅粒子中作為粒徑0.5~17 nm之粒子的比例(質量%)。“水分量”欄表示相對於藥液總質量之藥液中的水的含量(質量ppb)。 又,表1中,“E+數字”表示“10 數字”,例如。“3.5E+04”表示“3.5×10 4”。 表1中,“>99”表示大於99。“<1”表示小於1。 表1中,“<500ppb”表示小於500質量ppb。 in FIG. 1. The "Ti oxide particles/Ti ions" column indicates the mass ratio of the content of titanium oxide particles to the content of titanium ions. The "Ti ion amount (mass ppt)" column indicates the titanium ion content (mass ppt) relative to the total mass of the chemical solution. The "Fe oxide particles/Fe ions" column indicates the mass ratio of the content of iron oxide particles to the content of iron ions. The "Fe ion amount (mass ppt)" column indicates the iron ion content (mass ppt) relative to the total mass of the chemical solution. The column "Oxidized Al particles/Al ions" indicates the mass ratio of the content of aluminum oxide particles to the content of aluminum ions. The "Al ion amount (mass ppt)" column indicates the aluminum ion content (mass ppt) relative to the total mass of the chemical solution. The "Ti oxide particle ratio (mass %)" column indicates the content (mass %) of titanium oxide particles relative to the titanium component content in the metal component. The "Fe oxide particle ratio (mass %)" column indicates the content (mass %) of iron oxide particles relative to the content of the iron component in the metal component. The "Al oxide particle ratio (mass %)" column indicates the content of aluminum oxide particles (mass %) relative to the content of the aluminum component in the metal component. The column "Proportion of Ti oxide particles 0.5 to 17 nm (mass %)" indicates the proportion (mass %) of particles with a particle diameter of 0.5 to 17 nm among titanium oxide particles. The column "Proportion of 0.5-17 nm Fe oxide particles (mass %)" indicates the proportion (mass %) of particles with a particle diameter of 0.5 to 17 nm among the iron oxide particles. The "Proportion of 0.5-17 nm Al oxide particles (mass %)" column indicates the proportion (mass %) of particles with a particle diameter of 0.5 to 17 nm among the alumina particles. The "Oxidized Cu particle ratio (mass %)" column indicates the content (mass %) of copper oxide particles relative to the content of the copper component in the metal component. The "Proportion of 0.5-17 nm oxidized Cu particles (mass %)" column indicates the proportion (mass %) of particles with a particle diameter of 0.5 to 17 nm among the copper oxide particles. The "moisture content" column indicates the water content (mass ppb) in the chemical solution relative to the total mass of the chemical solution. In addition, in Table 1, "E+number" means "10 numbers ", for example. "3.5E+04" means "3.5×10 4 ". In Table 1, ">99" means greater than 99. "<1" means less than 1. In Table 1, "<500 ppb" means less than 500 ppb by mass.

[表1] 表1 [其1] <1> 有機溶劑 用途 原料 蒸餾純化 過濾器1 實施例1 CyHe 用途1 原料1 有-1 Purasol SN 200nm 實施例85 CyHe 用途1 原料1 有-1 Purasol SN 200nm 實施例2 CyHe 用途1 原料2 有-1 Purasol SN 200nm 實施例3 CyHe 用途1 原料1 有-1 Purasol SN 200nm 實施例4 CyHe 用途1 原料1 有-1 Purasol SN 200nm 實施例5 CyHe 用途1 原料1 有-1 Purasol SN 200nm 實施例6 CyHe 用途1 原料1 有-1 Purasol SN 200nm 實施例7 CyHe 用途1 原料1 有-1 Purasol SN 200nm 實施例8 CyHe 用途1 原料1 有-1 Purasol SN 200nm 實施例9 CyHe 用途1 原料1 有-1 Purasol SN 200nm 實施例10 CyHe 用途1 原料1 有-1 Purasol SN 200nm 實施例11 CyHe 用途1 原料1 有-1 Purasol SN 200nm 實施例12 CyHe 用途1 原料1 有-1 Purasol SN 200nm 實施例13 CyHe 用途1 原料1 有-1 Purasol SN 200nm 實施例14 CyHe 用途1 原料1 有-1 Purasol SN 200nm 實施例15 CyHe 用途1 原料1 有-1 Purasol SN 200nm 實施例16 CyHe 用途1 原料1 有-1 Purasol SN 200nm 實施例17 CyHe 用途1 原料1 有-1 Purasol SN 200nm 實施例18 CyHe 用途1 原料1 有-1 Purasol SN 200nm 實施例19 CyHe 用途1 原料1 有-1 Purasol SN 200nm 實施例20 CyHe 用途1 原料2 有-2 Purasol SN 200nm 實施例21 CyHe 用途1 原料2 有-3 Purasol SN 200nm 實施例22 PGMEA 用途1 原料3 有-1 Purasol SN 200nm 實施例86 PGMEA 用途1 原料3 有-1 Purasol SN 200nm 實施例23 PGMEA 用途1 原料4 有-1 Purasol SN 200nm 實施例24 PGMEA 用途1 原料3 有-1 Purasol SN 200nm 實施例25 PGMEA 用途1 原料3 有-1 Purasol SN 200nm 實施例26 PGMEA 用途1 原料3 有-1 Purasol SN 200nm 實施例27 PGMEA 用途1 原料3 有-1 Purasol SN 200nm 實施例28 PGMEA 用途1 原料3 有-1 Purasol SN 200nm 實施例29 PGMEA 用途1 原料3 有-1 Purasol SN 200nm 實施例30 PGMEA 用途1 原料3 有-1 Purasol SN 200nm 實施例31 PGMEA 用途1 原料3 有-1 Purasol SN 200nm 實施例32 PGMEA 用途1 原料3 有-1 Purasol SN 200nm [Table 1] Table 1 [Part 1] <1> organic solvent use raw material Distillation and purification filter 1 Example 1 cH Purpose 1 Raw material 1 There is -1 Purasol SN 200nm Example 85 cH Purpose 1 Raw material 1 There is -1 Purasol SN 200nm Example 2 cH Purpose 1 Raw material 2 There is -1 Purasol SN 200nm Example 3 cH Purpose 1 Raw material 1 There is -1 Purasol SN 200nm Example 4 cH Purpose 1 Raw material 1 There is -1 Purasol SN 200nm Example 5 cH Purpose 1 Raw material 1 There is -1 Purasol SN 200nm Example 6 cH Purpose 1 Raw material 1 There is -1 Purasol SN 200nm Example 7 cH Purpose 1 Raw material 1 There is -1 Purasol SN 200nm Example 8 cH Purpose 1 Raw material 1 There is -1 Purasol SN 200nm Example 9 cH Purpose 1 Raw material 1 There is -1 Purasol SN 200nm Example 10 cH Purpose 1 Raw material 1 There is -1 Purasol SN 200nm Example 11 cH Purpose 1 Raw material 1 There is -1 Purasol SN 200nm Example 12 cH Purpose 1 Raw material 1 There is -1 Purasol SN 200nm Example 13 cH Purpose 1 Raw material 1 There is -1 Purasol SN 200nm Example 14 cH Purpose 1 Raw material 1 There is -1 Purasol SN 200nm Example 15 cH Purpose 1 Raw material 1 There is -1 Purasol SN 200nm Example 16 cH Purpose 1 Raw material 1 There is -1 Purasol SN 200nm Example 17 cH Purpose 1 Raw material 1 There is -1 Purasol SN 200nm Example 18 cH Purpose 1 Raw material 1 There is -1 Purasol SN 200nm Example 19 cH Purpose 1 Raw material 1 There is -1 Purasol SN 200nm Example 20 cH Purpose 1 Raw material 2 There are -2 Purasol SN 200nm Example 21 cH Purpose 1 Raw material 2 There are 3 Purasol SN 200nm Example 22 PGMEA Purpose 1 Raw material 3 There is -1 Purasol SN 200nm Example 86 PGMEA Purpose 1 Raw material 3 There is -1 Purasol SN 200nm Example 23 PGMEA Purpose 1 Raw material 4 There is -1 Purasol SN 200nm Example 24 PGMEA Purpose 1 Raw material 3 There is -1 Purasol SN 200nm Example 25 PGMEA Purpose 1 Raw material 3 There is -1 Purasol SN 200nm Example 26 PGMEA Purpose 1 Raw material 3 There is -1 Purasol SN 200nm Example 27 PGMEA Purpose 1 Raw material 3 There is -1 Purasol SN 200nm Example 28 PGMEA Purpose 1 Raw material 3 There is -1 Purasol SN 200nm Example 29 PGMEA Purpose 1 Raw material 3 There is -1 Purasol SN 200nm Example 30 PGMEA Purpose 1 Raw material 3 There is -1 Purasol SN 200nm Example 31 PGMEA Purpose 1 Raw material 3 There is -1 Purasol SN 200nm Example 32 PGMEA Purpose 1 Raw material 3 There is -1 Purasol SN 200nm

[表2] 表1 [其1] <2> 過濾器2 過濾器3 過濾器4 過濾器5 過濾器6 過濾器7 實施例1 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm 實施例85 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm 實施例2 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm 實施例3 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm UPE1nm 實施例4 IEX 15nm PTFE 10nm Nylon 5nm UPE1nm UPE1nm 實施例5 IEX 15nm PTFE 10nm PTFE 5nm Nylon 5nm UPE1nm UPE1nm 實施例6 IEX 15nm IEX 15nm PTFE 10nm PTFE 5nm 實施例7 IEX 15nm IEX 15nm PTFE 10nm PTFE 7nm 實施例8 IEX 15nm IEX 15nm PTFE 10nm PTFE 10nm 實施例9 IEX 15nm Oktolex 5nm PTFE 10nm Nylon 5nm UPE3nm 實施例10 IEX 15nm Nylon 5nm Nylon 5nm Nylon 5nm UPE3nm 實施例11 IEX 15nm IEX 15nm PTFE 10nm Nylon 5nm UPE3nm 實施例12 IEX 15nm PTFE 10nm PTFE 7nm PTFE 5nm UPE3nm 實施例13 IEX 15nm IEX 15nm Nylon 5nm Nylon 5nm UPE1nm 實施例14 PTFE 10nm PTFE 10nm Nylon 5nm UPE3nm 實施例15 IEX 15nm IEX 15nm PTFE 10nm UPE3nm UPE3nm UPE1nm 實施例16 IEX 15nm PTFE 5nm UPE3nm UPE1nm UPE1nm UPE1nm 實施例17 IEX 15nm PTFE 10nm PTFE 5nm Nylon 5nm 實施例18 IEX 15nm IEX 15nm IEX 16nm Nylon 5nm Nylon 5nm UPE1nm 實施例19 IEX 15nm PTFE 10nm UPE3nm UPE3nm UPE3nm 實施例20 IEX 15nm PTFE 10nm Nylon 5nm UPE5nm UPE3nm 實施例21 IEX 15nm PTFE 10nm Nylon 5nm UPE5nm UPE3nm 實施例22 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm 實施例86 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm 實施例23 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm 實施例24 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm UPE1nm 實施例25 IEX 15nm PTFE 10nm Nylon 5nm UPE1nm UPE1nm 實施例26 IEX 15nm PTFE 10nm PTFE 5nm Nylon 5nm UPE1nm UPE1nm 實施例27 IEX 15nm IEX 15nm PTFE 10nm PTFE 5nm 實施例28 IEX 15nm IEX 15nm PTFE 10nm PTFE 7nm 實施例29 IEX 15nm IEX 15nm PTFE 10nm PTFE 10nm 實施例30 IEX 15nm Oktolex 5nm PTFE 10nm Nylon 5nm UPE3nm 實施例31 IEX 15nm Nylon 5nm Nylon 5nm Nylon 5nm UPE3nm 實施例32 IEX 15nm IEX 15nm PTFE 10nm Nylon 5nm UPE3nm [Table 2] Table 1 [Part 1] <2> filter 2 filter 3 filter 4 filter 5 filter 6 filter 7 Example 1 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm Example 85 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm Example 2 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm Example 3 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm UPE1nm Example 4 IEX 15nm PTFE 10nm Nylon 5nm UPE1nm UPE1nm Example 5 IEX 15nm PTFE 10nm PTFE 5nm Nylon 5nm UPE1nm UPE1nm Example 6 IEX 15nm IEX 15nm PTFE 10nm PTFE 5nm Example 7 IEX 15nm IEX 15nm PTFE 10nm PTFE 7nm Example 8 IEX 15nm IEX 15nm PTFE 10nm PTFE 10nm Example 9 IEX 15nm Oktolex 5nm PTFE 10nm Nylon 5nm UPE3nm Example 10 IEX 15nm Nylon 5nm Nylon 5nm Nylon 5nm UPE3nm Example 11 IEX 15nm IEX 15nm PTFE 10nm Nylon 5nm UPE3nm Example 12 IEX 15nm PTFE 10nm PTFE 7nm PTFE 5nm UPE3nm Example 13 IEX 15nm IEX 15nm Nylon 5nm Nylon 5nm UPE1nm Example 14 PTFE 10nm PTFE 10nm Nylon 5nm UPE3nm Example 15 IEX 15nm IEX 15nm PTFE 10nm UPE3nm UPE3nm UPE1nm Example 16 IEX 15nm PTFE 5nm UPE3nm UPE1nm UPE1nm UPE1nm Example 17 IEX 15nm PTFE 10nm PTFE 5nm Nylon 5nm Example 18 IEX 15nm IEX 15nm IEX 16nm Nylon 5nm Nylon 5nm UPE1nm Example 19 IEX 15nm PTFE 10nm UPE3nm UPE3nm UPE3nm Example 20 IEX 15nm PTFE 10nm Nylon 5nm UPE5nm UPE3nm Example 21 IEX 15nm PTFE 10nm Nylon 5nm UPE5nm UPE3nm Example 22 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm Example 86 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm Example 23 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm Example 24 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm UPE1nm Example 25 IEX 15nm PTFE 10nm Nylon 5nm UPE1nm UPE1nm Example 26 IEX 15nm PTFE 10nm PTFE 5nm Nylon 5nm UPE1nm UPE1nm Example 27 IEX 15nm IEX 15nm PTFE 10nm PTFE 5nm Example 28 IEX 15nm IEX 15nm PTFE 10nm PTFE 7nm Example 29 IEX 15nm IEX 15nm PTFE 10nm PTFE 10nm Example 30 IEX 15nm Oktolex 5nm PTFE 10nm Nylon 5nm UPE3nm Example 31 IEX 15nm Nylon 5nm Nylon 5nm Nylon 5nm UPE3nm Example 32 IEX 15nm IEX 15nm PTFE 10nm Nylon 5nm UPE3nm

[表3] 表1 [其1] <3> 藥液 氧化Ti粒子/ Ti離子 Ti離子量 (質量ppt) 氧化Fe粒子/ Fe離子 Fe離子量 (質量ppt) 氧化Al粒子/ Al離子 實施例1 3.5E+04 15 5.1E+04 22 7.4E+04 實施例85 3.5E+04 15 5.1E+04 22 7.4E+04 實施例2 2.1E+02 12 3.1E+02 17 4.5E+02 實施例3 1.2E+01 8 1.7E+01 12 2.5E+01 實施例4 5.0E+00 1 7.3E+00 1 1.1E+01 實施例5 2.0E+00 1 6.7E-01 1 9.7E-01 實施例6 5.1E+06 8 7.4E+06 12 1.1E+07 實施例7 1.5E+09 32 2.2E+09 46 3.2E+09 實施例8 3.5E+11 51 1.7E+12 74 3.1E+12 實施例9 2.8E+04 13 6.7E-01 2 4.6E+04 實施例10 4.1E+04 12 5.1E+12 85 3.8E+04 實施例11 4.5E+04 15 4.7E+04 19 9.7E-01 實施例12 4.5E+04 15 6.5E+04 27 1.3E+13 實施例13 4.0E+00 0.08 5.8E+00 0.06 8.4E+00 實施例14 3.3E+10 113 4.7E+10 164 6.9E+10 實施例15 2.9E+04 16 4.3E+04 15 6.2E+04 實施例16 2.7E+04 12 3.8E+04 11 5.6E+04 實施例17 2.6E+03 13 3.7E+03 12 5.4E+03 實施例18 1.7E+03 9 2.5E+03 8 3.6E+03 實施例19 1.7E+03 9 2.5E+03 8 3.6E+03 實施例20 3.8E+04 16 5.5E+04 23 8.0E+04 實施例21 4.1E+04 12 5.9E+04 17 8.6E+04 實施例22 3.3E+04 14 4.8E+04 21 7.0E+04 實施例86 3.3E+04 14 4.8E+04 21 7.0E+04 實施例23 2.0E+02 11 2.9E+02 17 4.2E+02 實施例24 1.1E+01 8 1.7E+01 11 2.4E+01 實施例25 4.8E+00 1 6.9E+00 1 1.0E+01 實施例26 1.9E+00 1 6.3E-01 1 9.2E-01 實施例27 4.8E+06 8 7.0E+06 11 1.0E+07 實施例28 1.5E+09 30 2.1E+09 44 3.1E+09 實施例29 3.3E+11 48 1.6E+12 70 2.9E+12 實施例30 2.7E+04 12 6.3E-01 2 4.3E+04 實施例31 3.9E+04 11 4.8E+12 81 3.6E+04 實施例32 4.3E+04 14 4.5E+04 18 9.2E-01 [table 3] Table 1 [Part 1] <3> liquid medicine Oxidized Ti particles/Ti ions Ti ion amount (mass ppt) Oxidized Fe particles/Fe ions Fe ion amount (mass ppt) Oxidized Al particles/Al ions Example 1 3.5E+04 15 5.1E+04 twenty two 7.4E+04 Example 85 3.5E+04 15 5.1E+04 twenty two 7.4E+04 Example 2 2.1E+02 12 3.1E+02 17 4.5E+02 Example 3 1.2E+01 8 1.7E+01 12 2.5E+01 Example 4 5.0E+00 1 7.3E+00 1 1.1E+01 Example 5 2.0E+00 1 6.7E-01 1 9.7E-01 Example 6 5.1E+06 8 7.4E+06 12 1.1E+07 Example 7 1.5E+09 32 2.2E+09 46 3.2E+09 Example 8 3.5E+11 51 1.7E+12 74 3.1E+12 Example 9 2.8E+04 13 6.7E-01 2 4.6E+04 Example 10 4.1E+04 12 5.1E+12 85 3.8E+04 Example 11 4.5E+04 15 4.7E+04 19 9.7E-01 Example 12 4.5E+04 15 6.5E+04 27 1.3E+13 Example 13 4.0E+00 0.08 5.8E+00 0.06 8.4E+00 Example 14 3.3E+10 113 4.7E+10 164 6.9E+10 Example 15 2.9E+04 16 4.3E+04 15 6.2E+04 Example 16 2.7E+04 12 3.8E+04 11 5.6E+04 Example 17 2.6E+03 13 3.7E+03 12 5.4E+03 Example 18 1.7E+03 9 2.5E+03 8 3.6E+03 Example 19 1.7E+03 9 2.5E+03 8 3.6E+03 Example 20 3.8E+04 16 5.5E+04 twenty three 8.0E+04 Example 21 4.1E+04 12 5.9E+04 17 8.6E+04 Example 22 3.3E+04 14 4.8E+04 twenty one 7.0E+04 Example 86 3.3E+04 14 4.8E+04 twenty one 7.0E+04 Example 23 2.0E+02 11 2.9E+02 17 4.2E+02 Example 24 1.1E+01 8 1.7E+01 11 2.4E+01 Example 25 4.8E+00 1 6.9E+00 1 1.0E+01 Example 26 1.9E+00 1 6.3E-01 1 9.2E-01 Example 27 4.8E+06 8 7.0E+06 11 1.0E+07 Example 28 1.5E+09 30 2.1E+09 44 3.1E+09 Example 29 3.3E+11 48 1.6E+12 70 2.9E+12 Example 30 2.7E+04 12 6.3E-01 2 4.3E+04 Example 31 3.9E+04 11 4.8E+12 81 3.6E+04 Example 32 4.3E+04 14 4.5E+04 18 9.2E-01

[表4] 表1 [其1] <4> 藥液 Al離子量 (質量ppt) 氧化Cu粒子/Cu離子 Cu離子量 (質量ppt) 氧化Ti粒子比例 (質量%) 氧化Fe粒子比例 (質量%) 氧化Al粒子比例 (質量%) 氧化Cu粒子比例 (質量%) 0.5-17nm的氧化Ti粒子的比例 (質量%) 實施例1 32 4.4E+05 27 90 81 90 81 90 實施例85 32 4.4E+05 27 90 81 90 81 90 實施例2 25 2.7E+03 21 80 72 84 77 85 實施例3 8 1.5E+02 7 80 72 84 81 90 實施例4 9 6.3E+01 8 75 68 79 85 90 實施例5 2 5.8E-01 2 75 68 79 84 90 實施例6 35 6.4E+07 30 80 72 84 58 80 實施例7 69 1.9E+10 59 90 81 75 66 90 實施例8 102 1.8E+13 87 80 85 80 85 90 實施例9 26 2.7E+05 22 90 45 90 45 84 實施例10 41 2.3E+05 35 90 90 90 90 78 實施例11 2 6.0E-01 2 90 81 95 81 66 實施例12 145 7.6E+13 123 90 81 98 81 85 實施例13 0.09 5.0E+01 0.08 98 88 95 72 95 實施例14 238 4.1E+11 202 90 85 80 85 85 實施例15 14 3.7E+05 12 20 18 21 68 80 實施例16 10 3.3E+05 9 4 3 5 3 90 實施例17 11 3.2E+04 10 >99 >99 >99 >99 90 實施例18 8 2.1E+04 7 95 86 96 50 45 實施例19 8 2.1E+04 7 94 85 99 89 >99 實施例20 34 4.8E+05 29 90 81 90 81 90 實施例21 25 5.2E+05 21 90 81 90 81 90 實施例22 30 4.2E+05 25 86 77 86 77 86 實施例86 30 4.2E+05 25 86 77 86 73 86 實施例23 24 2.5E+03 20 74 67 78 71 79 實施例24 8 1.4E+02 6 74 67 78 75 84 實施例25 9 6.0E+01 7 70 63 73 79 84 實施例26 2 4.0E-01 2 70 63 73 78 84 實施例27 33 6.1E+07 28 74 67 78 54 74 實施例28 66 1.8E+10 56 84 75 70 61 84 實施例29 97 1.7E+13 82 74 79 74 79 84 實施例30 25 2.6E+05 21 84 42 84 42 78 實施例31 39 2.1E+05 33 84 84 84 84 73 實施例32 2 5.5E-01 2 84 75 88 75 61 [Table 4] Table 1 [Part 1] <4> liquid medicine Al ion amount (mass ppt) Oxidized Cu particles/Cu ions Cu ion amount (mass ppt) Proportion of Ti oxide particles (mass %) Proportion of oxidized Fe particles (mass %) Proportion of oxidized Al particles (mass %) Proportion of oxidized Cu particles (mass %) Proportion of 0.5-17nm Ti oxide particles (mass %) Example 1 32 4.4E+05 27 90 81 90 81 90 Example 85 32 4.4E+05 27 90 81 90 81 90 Example 2 25 2.7E+03 twenty one 80 72 84 77 85 Example 3 8 1.5E+02 7 80 72 84 81 90 Example 4 9 6.3E+01 8 75 68 79 85 90 Example 5 2 5.8E-01 2 75 68 79 84 90 Example 6 35 6.4E+07 30 80 72 84 58 80 Example 7 69 1.9E+10 59 90 81 75 66 90 Example 8 102 1.8E+13 87 80 85 80 85 90 Example 9 26 2.7E+05 twenty two 90 45 90 45 84 Example 10 41 2.3E+05 35 90 90 90 90 78 Example 11 2 6.0E-01 2 90 81 95 81 66 Example 12 145 7.6E+13 123 90 81 98 81 85 Example 13 0.09 5.0E+01 0.08 98 88 95 72 95 Example 14 238 4.1E+11 202 90 85 80 85 85 Example 15 14 3.7E+05 12 20 18 twenty one 68 80 Example 16 10 3.3E+05 9 4 3 5 3 90 Example 17 11 3.2E+04 10 >99 >99 >99 >99 90 Example 18 8 2.1E+04 7 95 86 96 50 45 Example 19 8 2.1E+04 7 94 85 99 89 >99 Example 20 34 4.8E+05 29 90 81 90 81 90 Example 21 25 5.2E+05 twenty one 90 81 90 81 90 Example 22 30 4.2E+05 25 86 77 86 77 86 Example 86 30 4.2E+05 25 86 77 86 73 86 Example 23 twenty four 2.5E+03 20 74 67 78 71 79 Example 24 8 1.4E+02 6 74 67 78 75 84 Example 25 9 6.0E+01 7 70 63 73 79 84 Example 26 2 4.0E-01 2 70 63 73 78 84 Example 27 33 6.1E+07 28 74 67 78 54 74 Example 28 66 1.8E+10 56 84 75 70 61 84 Example 29 97 1.7E+13 82 74 79 74 79 84 Example 30 25 2.6E+05 twenty one 84 42 84 42 78 Example 31 39 2.1E+05 33 84 84 84 84 73 Example 32 2 5.5E-01 2 84 75 88 75 61

[表5] 表1 [其1] <5> 藥液 填充容器 0.5-17nm的 氧化Fe粒子的比例 (質量%) 0.5-17nm的 氧化Al粒子的比例 (質量%) 0.5-17nm的 氧化Cu粒子的比例 (質量%) 水分量 有機雜質量 (質量ppt) 實施例1 81 95 81 <500ppb 11330 EP-SUS 實施例85 81 95 81 700ppb 11330 EP-SUS 實施例2 85 85 85 <500ppb 10987 EP-SUS 實施例3 90 90 90 <500ppb 9613 EP-SUS 實施例4 81 94 81 <500ppb 8583 EP-SUS 實施例5 81 93 81 <500ppb 8240 EP-SUS 實施例6 72 65 72 <500ppb 10987 EP-SUS 實施例7 81 73 81 <500ppb 15450 EP-SUS 實施例8 81 85 81 <500ppb 13047 EP-SUS 實施例9 85 90 85 <500ppb 10987 EP-SUS 實施例10 85 90 85 <500ppb 9613 EP-SUS 實施例11 59 65 59 <500ppb 8583 EP-SUS 實施例12 80 80 80 <500ppb 8927 EP-SUS 實施例13 86 80 86 <500ppb 16480 EP-SUS 實施例14 75 85 75 <500ppb 10643 PFA 實施例15 80 75 80 <500ppb 10300 EP-SUS 實施例16 85 80 85 <500ppb 9613 PFA 實施例17 80 72 80 <500ppb 12017 EP-SUS 實施例18 40 55 40 <500ppb 11673 EP-SUS 實施例19 >99 >99 >99 <500ppb 10987 EP-SUS 實施例20 90 90 90 <500ppb <1 EP-SUS 實施例21 90 90 90 <500ppb 164800 EP-SUS 實施例22 77 90 77 <500ppb 12733 EP-SUS 實施例86 77 90 81 700ppb 12733 EP-SUS 實施例23 79 79 79 <500ppb 13131 EP-SUS 實施例24 84 84 84 <500ppb 15007 EP-SUS 實施例25 75 87 75 <500ppb 16808 EP-SUS 實施例26 75 86 75 <500ppb 17508 EP-SUS 實施例27 67 60 67 <500ppb 13131 EP-SUS 實施例28 75 68 75 <500ppb 9338 EP-SUS 實施例29 75 79 75 <500ppb 11058 EP-SUS 實施例30 79 84 79 <500ppb 13131 PFA 實施例31 79 84 79 <500ppb 15007 EP-SUS 實施例32 55 60 55 <500ppb 16808 PFA [table 5] Table 1 [Part 1] <5> liquid medicine fill container Proportion of 0.5-17nm Fe oxide particles (mass %) Proportion of 0.5-17 nm oxidized Al particles (mass %) Proportion of 0.5-17nm oxidized Cu particles (mass %) Moisture content Amount of organic impurities (mass ppt) Example 1 81 95 81 <500ppb 11330 EP-SUS Example 85 81 95 81 700 ppb 11330 EP-SUS Example 2 85 85 85 <500ppb 10987 EP-SUS Example 3 90 90 90 <500ppb 9613 EP-SUS Example 4 81 94 81 <500ppb 8583 EP-SUS Example 5 81 93 81 <500ppb 8240 EP-SUS Example 6 72 65 72 <500ppb 10987 EP-SUS Example 7 81 73 81 <500ppb 15450 EP-SUS Example 8 81 85 81 <500ppb 13047 EP-SUS Example 9 85 90 85 <500ppb 10987 EP-SUS Example 10 85 90 85 <500ppb 9613 EP-SUS Example 11 59 65 59 <500ppb 8583 EP-SUS Example 12 80 80 80 <500ppb 8927 EP-SUS Example 13 86 80 86 <500ppb 16480 EP-SUS Example 14 75 85 75 <500ppb 10643 PFA Example 15 80 75 80 <500ppb 10300 EP-SUS Example 16 85 80 85 <500ppb 9613 PFA Example 17 80 72 80 <500ppb 12017 EP-SUS Example 18 40 55 40 <500ppb 11673 EP-SUS Example 19 >99 >99 >99 <500ppb 10987 EP-SUS Example 20 90 90 90 <500ppb <1 EP-SUS Example 21 90 90 90 <500ppb 164800 EP-SUS Example 22 77 90 77 <500ppb 12733 EP-SUS Example 86 77 90 81 700ppb 12733 EP-SUS Example 23 79 79 79 <500ppb 13131 EP-SUS Example 24 84 84 84 <500ppb 15007 EP-SUS Example 25 75 87 75 <500ppb 16808 EP-SUS Example 26 75 86 75 <500ppb 17508 EP-SUS Example 27 67 60 67 <500ppb 13131 EP-SUS Example 28 75 68 75 <500ppb 9338 EP-SUS Example 29 75 79 75 <500ppb 11058 EP-SUS Example 30 79 84 79 <500ppb 13131 PFA Example 31 79 84 79 <500ppb 15007 EP-SUS Example 32 55 60 55 <500ppb 16808 PFA

[表6] 表1 [其1] <6> 評價 Si上的金屬殘渣 Si上的複合物殘渣 Si上的色斑殘渣 SiO 2上的金屬殘渣 SiO 2上的複合物殘渣 實施例1 A A A A A 實施例85 B A A B A 實施例2 A A A A A 實施例3 A B A A B 實施例4 A C A A C 實施例5 A D A A C 實施例6 A A A B A 實施例7 B B A C A 實施例8 C B A D B 實施例9 A B A A C 實施例10 B A A D A 實施例11 A B A A C 實施例12 B A A D A 實施例13 A D A A D 實施例14 B C A B C 實施例15 B A A A B 實施例16 C B A B C 實施例17 B D A D D 實施例18 B B A C B 實施例19 A C A D C 實施例20 A A D A A 實施例21 A A D A A 實施例22 A A A A A 實施例86 B A A B A 實施例23 A A A A A 實施例24 A B A A B 實施例25 A C A A C 實施例26 A D A A C 實施例27 A A A B A 實施例28 B B A C A 實施例29 C B A D B 實施例30 A B A A C 實施例31 B A A D A 實施例32 A B A A C [Table 6] Table 1 [Part 1] <6> Evaluation Metal residue on Si Complex residue on Si stain residue on Si Metal residue on SiO2 Complex residue on SiO2 Example 1 A A A A A Example 85 B A A B A Example 2 A A A A A Example 3 A B A A B Example 4 A C A A C Example 5 A D A A C Example 6 A A A B A Example 7 B B A C A Example 8 C B A D B Example 9 A B A A C Example 10 B A A D A Example 11 A B A A C Example 12 B A A D A Example 13 A D A A D Example 14 B C A B C Example 15 B A A A B Example 16 C B A B C Example 17 B D A D D Example 18 B B A C B Example 19 A C A D C Example 20 A A D A A Example 21 A A D A A Example 22 A A A A A Example 86 B A A B A Example 23 A A A A A Example 24 A B A A B Example 25 A C A A C Example 26 A D A A C Example 27 A A A B A Example 28 B B A C A Example 29 C B A D B Example 30 A B A A C Example 31 B A A D A Example 32 A B A A C

[表7] 表1 [其2] <1> 有機溶劑 用途 原料 蒸餾純化 過濾器1 實施例33 PGMEA 用途1 原料3 有-1 Purasol SN 200nm 實施例34 PGMEA 用途1 原料3 有-1 Purasol SN 200nm 實施例35 PGMEA 用途1 原料3 有-1 Purasol SN 200nm 實施例36 PGMEA 用途1 原料3 有-1 Purasol SN 200nm 實施例37 PGMEA 用途1 原料3 有-1 Purasol SN 200nm 實施例38 PGMEA 用途1 原料3 有-1 Purasol SN 200nm 實施例39 PGMEA 用途1 原料3 有-1 Purasol SN 200nm 實施例40 PGMEA 用途1 原料3 有-1 Purasol SN 200nm 實施例41 PGMEA 用途1 原料3 有-2 Purasol SN 200nm 實施例42 PGMEA 用途1 原料3 有-3 Purasol SN 200nm 實施例43 MIBC 用途1 原料5 有-1 Purasol SP 200nm 實施例87 MIBC 用途1 原料5 有-1 Purasol SP 200nm 實施例44 MIBC 用途1 原料6 有-1 Purasol SP 200nm 實施例45 MIBC 用途1 原料5 有-1 Purasol SP 200nm 實施例46 MIBC 用途1 原料5 有-1 Purasol SP 200nm 實施例47 MIBC 用途1 原料5 有-1 Purasol SP 200nm 實施例48 MIBC 用途1 原料5 有-1 Purasol SP 200nm 實施例49 MIBC 用途1 原料5 有-1 Purasol SP 200nm 實施例50 MIBC 用途1 原料5 有-1 Purasol SP 200nm 實施例51 MIBC 用途1 原料5 有-1 Purasol SP 200nm 實施例52 MIBC 用途1 原料5 有-1 Purasol SP 200nm 實施例53 MIBC 用途1 原料5 有-1 Purasol SP 200nm 實施例54 MIBC 用途1 原料5 有-1 Purasol SP 200nm 實施例55 MIBC 用途1 原料5 有-1 Purasol SP 200nm 實施例56 MIBC 用途1 原料5 有-1 Purasol SP 200nm 實施例57 MIBC 用途1 原料5 有-1 Purasol SP 200nm 實施例58 MIBC 用途1 原料5 有-1 Purasol SP 200nm 實施例59 MIBC 用途1 原料5 有-1 Purasol SP 200nm 實施例60 MIBC 用途1 原料5 有-1 Purasol SP 200nm 實施例61 MIBC 用途1 原料5 有-1 Purasol SP 200nm 實施例62 MIBC 用途1 原料6 有-2 Purasol SP 200nm 實施例63 MIBC 用途1 原料6 有-3 Purasol SP 200nm 比較例1 CyHe 用途1 原料1 有-1 PP 200nm 比較例2 CyHe 用途1 原料1 有-1 Purasol SP 200nm [Table 7] Table 1 [Part 2] <1> organic solvent use raw material Distillation and purification filter 1 Example 33 PGMEA Purpose 1 Raw material 3 There is -1 Purasol SN 200nm Example 34 PGMEA Purpose 1 Raw material 3 There is -1 Purasol SN 200nm Example 35 PGMEA Purpose 1 Raw material 3 There is -1 Purasol SN 200nm Example 36 PGMEA Purpose 1 Raw material 3 There is -1 Purasol SN 200nm Example 37 PGMEA Purpose 1 Raw material 3 There is -1 Purasol SN 200nm Example 38 PGMEA Purpose 1 Raw material 3 There is -1 Purasol SN 200nm Example 39 PGMEA Purpose 1 Raw material 3 There is -1 Purasol SN 200nm Example 40 PGMEA Purpose 1 Raw material 3 There is -1 Purasol SN 200nm Example 41 PGMEA Purpose 1 Raw material 3 There are -2 Purasol SN 200nm Example 42 PGMEA Purpose 1 Raw material 3 There are 3 Purasol SN 200nm Example 43 MIBC Purpose 1 Raw material 5 There is -1 Purasol SP 200nm Example 87 MIBC Purpose 1 Raw material 5 There is -1 Purasol SP 200nm Example 44 MIBC Purpose 1 Raw material 6 There is -1 Purasol SP 200nm Example 45 MIBC Purpose 1 Raw material 5 There is -1 Purasol SP 200nm Example 46 MIBC Purpose 1 Raw material 5 There is -1 Purasol SP 200nm Example 47 MIBC Purpose 1 Raw material 5 There is -1 Purasol SP 200nm Example 48 MIBC Purpose 1 Raw material 5 There is -1 Purasol SP 200nm Example 49 MIBC Purpose 1 Raw material 5 There is -1 Purasol SP 200nm Example 50 MIBC Purpose 1 Raw material 5 There is -1 Purasol SP 200nm Example 51 MIBC Purpose 1 Raw material 5 There is -1 Purasol SP 200nm Example 52 MIBC Purpose 1 Raw material 5 There is -1 Purasol SP 200nm Example 53 MIBC Purpose 1 Raw material 5 There is -1 Purasol SP 200nm Example 54 MIBC Purpose 1 Raw material 5 There is -1 Purasol SP 200nm Example 55 MIBC Purpose 1 Raw material 5 There is -1 Purasol SP 200nm Example 56 MIBC Purpose 1 Raw material 5 There is -1 Purasol SP 200nm Example 57 MIBC Purpose 1 Raw material 5 There is -1 Purasol SP 200nm Example 58 MIBC Purpose 1 Raw material 5 There is -1 Purasol SP 200nm Example 59 MIBC Purpose 1 Raw material 5 There is -1 Purasol SP 200nm Example 60 MIBC Purpose 1 Raw material 5 There is -1 Purasol SP 200nm Example 61 MIBC Purpose 1 Raw material 5 There is -1 Purasol SP 200nm Example 62 MIBC Purpose 1 Raw material 6 There are -2 Purasol SP 200nm Example 63 MIBC Purpose 1 Raw material 6 There are 3 Purasol SP 200nm Comparative example 1 cH Purpose 1 Raw material 1 There is -1 PP 200nm Comparative example 2 cH Purpose 1 Raw material 1 There is -1 Purasol SP 200nm

[表8] 表1 [其2] <2> 過濾器2 過濾器3 過濾器4 過濾器5 過濾器6 過濾器7 實施例33 IEX 15nm PTFE 10nm PTFE 7nm PTFE 5nm UPE3nm 實施例34 IEX 15nm IEX 15nm Nylon 5nm Nylon 5nm UPE1nm 實施例35 PTFE 10nm PTFE 10nm Nylon 5nm UPE3nm 實施例36 IEX 15nm IEX 15nm PTFE 10nm UPE3nm UPE3nm UPE1nm 實施例37 IEX 15nm PTFE 5nm UPE3nm UPE1nm UPE1nm UPE1nm 實施例38 IEX 15nm PTFE 10nm PTFE 5nm Nylon 5nm 實施例39 IEX 15nm IEX 15nm IEX 16nm Nylon 5nm Nylon 5nm UPE1nm 實施例40 IEX 15nm PTFE 10nm UPE3nm UPE3nm UPE3nm 實施例41 IEX 15nm PTFE 10nm Nylon 5nm UPE5nm UPE3nm 實施例42 IEX 15nm PTFE 10nm Nylon 5nm UPE5nm UPE3nm 實施例43 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm 實施例87 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm 實施例44 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm 實施例45 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm UPE1nm 實施例46 IEX 15nm PTFE 10nm Nylon 5nm UPE1nm UPE1nm 實施例47 IEX 15nm PTFE 10nm PTFE 5nm Nylon 5nm UPE1nm UPE1nm 實施例48 IEX 15nm IEX 15nm PTFE 10nm PTFE 5nm 實施例49 IEX 15nm IEX 15nm PTFE 10nm PTFE 7nm 實施例50 IEX 15nm IEX 15nm PTFE 10nm PTFE 10nm 實施例51 IEX 15nm Oktolex 5nm PTFE 10nm Nylon 5nm UPE3nm 實施例52 IEX 15nm Nylon 5nm Nylon 5nm Nylon 5nm UPE3nm 實施例53 IEX 15nm IEX 15nm PTFE 10nm Nylon 5nm UPE3nm 實施例54 IEX 15nm PTFE 10nm PTFE 7nm PTFE 5nm UPE3nm 實施例55 IEX 15nm IEX 15nm Nylon 5nm Nylon 5nm UPE1nm 實施例56 PTFE 10nm PTFE 10nm Nylon 5nm UPE3nm 實施例57 IEX 15nm IEX 15nm PTFE 10nm UPE3nm UPE3nm UPE1nm 實施例58 IEX 15nm PTFE 5nm UPE3nm UPE1nm UPE1nm UPE1nm 實施例59 IEX 15nm PTFE 10nm PTFE 5nm Nylon 5nm 實施例60 IEX 15nm IEX 15nm IEX 16nm Nylon 5nm Nylon 5nm UPE1nm 實施例61 IEX 15nm PTFE 10nm UPE3nm UPE3nm UPE3nm 實施例62 IEX 15nm PTFE 10nm Nylon 5nm UPE5nm UPE3nm 實施例63 IEX 15nm PTFE 10nm Nylon 5nm UPE5nm UPE3nm 比較例1 PTFE 10nm PTFE 10nm PTFE 7nm PTFE 5nm UPE1nm UPE1nm 比較例2 IEX 15nm IEX 15nm PTFE 50nm PTFE 50nm UPE5nm [Table 8] Table 1 [Part 2] <2> filter 2 filter 3 filter 4 filter 5 filter 6 filter 7 Example 33 IEX 15nm PTFE 10nm PTFE 7nm PTFE 5nm UPE3nm Example 34 IEX 15nm IEX 15nm Nylon 5nm Nylon 5nm UPE1nm Example 35 PTFE 10nm PTFE 10nm Nylon 5nm UPE3nm Example 36 IEX 15nm IEX 15nm PTFE 10nm UPE3nm UPE3nm UPE1nm Example 37 IEX 15nm PTFE 5nm UPE3nm UPE1nm UPE1nm UPE1nm Example 38 IEX 15nm PTFE 10nm PTFE 5nm Nylon 5nm Example 39 IEX 15nm IEX 15nm IEX 16nm Nylon 5nm Nylon 5nm UPE1nm Example 40 IEX 15nm PTFE 10nm UPE3nm UPE3nm UPE3nm Example 41 IEX 15nm PTFE 10nm Nylon 5nm UPE5nm UPE3nm Example 42 IEX 15nm PTFE 10nm Nylon 5nm UPE5nm UPE3nm Example 43 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm Example 87 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm Example 44 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm Example 45 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm UPE1nm Example 46 IEX 15nm PTFE 10nm Nylon 5nm UPE1nm UPE1nm Example 47 IEX 15nm PTFE 10nm PTFE 5nm Nylon 5nm UPE1nm UPE1nm Example 48 IEX 15nm IEX 15nm PTFE 10nm PTFE 5nm Example 49 IEX 15nm IEX 15nm PTFE 10nm PTFE 7nm Example 50 IEX 15nm IEX 15nm PTFE 10nm PTFE 10nm Example 51 IEX 15nm Oktolex 5nm PTFE 10nm Nylon 5nm UPE3nm Example 52 IEX 15nm Nylon 5nm Nylon 5nm Nylon 5nm UPE3nm Example 53 IEX 15nm IEX 15nm PTFE 10nm Nylon 5nm UPE3nm Example 54 IEX 15nm PTFE 10nm PTFE 7nm PTFE 5nm UPE3nm Example 55 IEX 15nm IEX 15nm Nylon 5nm Nylon 5nm UPE1nm Example 56 PTFE 10nm PTFE 10nm Nylon 5nm UPE3nm Example 57 IEX 15nm IEX 15nm PTFE 10nm UPE3nm UPE3nm UPE1nm Example 58 IEX 15nm PTFE 5nm UPE3nm UPE1nm UPE1nm UPE1nm Example 59 IEX 15nm PTFE 10nm PTFE 5nm Nylon 5nm Example 60 IEX 15nm IEX 15nm IEX 16nm Nylon 5nm Nylon 5nm UPE1nm Example 61 IEX 15nm PTFE 10nm UPE3nm UPE3nm UPE3nm Example 62 IEX 15nm PTFE 10nm Nylon 5nm UPE5nm UPE3nm Example 63 IEX 15nm PTFE 10nm Nylon 5nm UPE5nm UPE3nm Comparative example 1 PTFE 10nm PTFE 10nm PTFE 7nm PTFE 5nm UPE1nm UPE1nm Comparative example 2 IEX 15nm IEX 15nm PTFE 50nm PTFE 50nm UPE5nm

[表9] 表1 [其2] <3> 藥液 氧化Ti粒子/ Ti離子 Ti離子量 (質量ppt) 氧化Fe粒子/ Fe離子 Fe離子量 (質量ppt) 氧化Al粒子/ Al離子 實施例33 4.3E+04 14 6.2E+04 26 1.2E+13 實施例34 3.8E+00 0.08 5.5E+00 0.06 8.0E+00 實施例35 3.1E+10 107.35 4.5E+10 156 6.5E+10 實施例36 2.8E+04 15 4.1E+04 14 5.9E+04 實施例37 2.5E+04 11 3.7E+04 11 5.3E+04 實施例38 2.4E+03 12 3.5E+03 11 5.1E+03 實施例39 1.7E+03 9 2.5E+03 8 3.6E+03 實施例40 1.7E+03 9 2.5E+03 8 3.6E+03 實施例41 3.8E+04 16 5.5E+04 23 8.0E+04 實施例42 4.1E+04 12 5.9E+04 17 8.6E+04 實施例43 4.2E+04 18 6.0E+04 26 8.7E+04 實施例87 4.2E+04 18 6.0E+04 26 8.7E+04 實施例44 2.5E+02 14 3.7E+02 21 5.3E+02 實施例45 1.4E+01 10 2.1E+01 14 3.0E+01 實施例46 5.9E+00 1 8.6E+00 2 1.2E+01 實施例47 2.4E+00 1 7.9E-01 2 7.8E-01 實施例48 6.1E+06 10 8.8E+06 14 1.3E+07 實施例49 1.8E+09 38 2.6E+09 55 3.8E+09 實施例50 4.2E+11 61 2.0E+12 88 3.6E+12 實施例51 3.3E+04 15 7.9E-01 2 5.4E+04 實施例52 4.9E+04 14 6.0E+12 101 4.5E+04 實施例53 5.3E+04 18 5.6E+04 23 8.7E-01 實施例54 5.3E+04 18 7.7E+04 32 1.5E+13 實施例55 4.8E+00 0.08 6.9E+00 0.08 1.0E+01 實施例56 3.9E+10 134.19 5.6E+10 195 8.2E+10 實施例57 3.5E+04 19 5.1E+04 18 7.4E+04 實施例58 3.1E+04 14 4.6E+04 13 6.6E+04 實施例59 3.0E+03 15 4.4E+03 14 6.4E+03 實施例60 2.1E+03 11 3.1E+03 10 4.5E+03 實施例61 2.1E+03 11 3.1E+03 10 4.5E+03 實施例62 4.8E+04 20 6.9E+04 29 1.0E+05 實施例63 5.1E+04 15 7.4E+04 22 1.1E+05 比較例1 6.0E-01 22 5.4E-01 32 4.9E-01 比較例2 1.3E+12 18 1.2E+12 26 1.0E+12 [Table 9] Table 1 [Part 2] <3> liquid medicine Oxidized Ti particles/Ti ions Ti ion amount (mass ppt) Oxidized Fe particles/Fe ions Fe ion amount (mass ppt) Oxidized Al particles/Al ions Example 33 4.3E+04 14 6.2E+04 26 1.2E+13 Example 34 3.8E+00 0.08 5.5E+00 0.06 8.0E+00 Example 35 3.1E+10 107.35 4.5E+10 156 6.5E+10 Example 36 2.8E+04 15 4.1E+04 14 5.9E+04 Example 37 2.5E+04 11 3.7E+04 11 5.3E+04 Example 38 2.4E+03 12 3.5E+03 11 5.1E+03 Example 39 1.7E+03 9 2.5E+03 8 3.6E+03 Example 40 1.7E+03 9 2.5E+03 8 3.6E+03 Example 41 3.8E+04 16 5.5E+04 twenty three 8.0E+04 Example 42 4.1E+04 12 5.9E+04 17 8.6E+04 Example 43 4.2E+04 18 6.0E+04 26 8.7E+04 Example 87 4.2E+04 18 6.0E+04 26 8.7E+04 Example 44 2.5E+02 14 3.7E+02 twenty one 5.3E+02 Example 45 1.4E+01 10 2.1E+01 14 3.0E+01 Example 46 5.9E+00 1 8.6E+00 2 1.2E+01 Example 47 2.4E+00 1 7.9E-01 2 7.8E-01 Example 48 6.1E+06 10 8.8E+06 14 1.3E+07 Example 49 1.8E+09 38 2.6E+09 55 3.8E+09 Example 50 4.2E+11 61 2.0E+12 88 3.6E+12 Example 51 3.3E+04 15 7.9E-01 2 5.4E+04 Example 52 4.9E+04 14 6.0E+12 101 4.5E+04 Example 53 5.3E+04 18 5.6E+04 twenty three 8.7E-01 Example 54 5.3E+04 18 7.7E+04 32 1.5E+13 Example 55 4.8E+00 0.08 6.9E+00 0.08 1.0E+01 Example 56 3.9E+10 134.19 5.6E+10 195 8.2E+10 Example 57 3.5E+04 19 5.1E+04 18 7.4E+04 Example 58 3.1E+04 14 4.6E+04 13 6.6E+04 Example 59 3.0E+03 15 4.4E+03 14 6.4E+03 Example 60 2.1E+03 11 3.1E+03 10 4.5E+03 Example 61 2.1E+03 11 3.1E+03 10 4.5E+03 Example 62 4.8E+04 20 6.9E+04 29 1.0E+05 Example 63 5.1E+04 15 7.4E+04 twenty two 1.1E+05 Comparative example 1 6.0E-01 twenty two 5.4E-01 32 4.9E-01 Comparative example 2 1.3E+12 18 1.2E+12 26 1.0E+12

[表10] 表1 [其2] <4> 藥液 Al離子量 (質量ppt) 氧化Fe粒子/Fe離子 Fe離子量 (質量ppt) 氧化Ti粒子比例 (質量%) 氧化Fe粒子比例 (質量%) 氧化Al粒子比例 (質量%) 氧化Cu粒子比例 (質量%) 0.5-17nm的氧化Ti粒子的比例 (質量%) 實施例33 138 7.2E+13 117 84 75 91 75 79 實施例34 0.09 4.8E+01 0.07 91 82 88 67 88 實施例35 226 3.9E+11 192 84 79 74 79 79 實施例36 13 3.5E+05 11 19 17 20 64 76 實施例37 10 3.2E+05 8 4 3 5 3 86 實施例38 11 3.1E+04 9 >99 >99 >99 >99 86 實施例39 8 2.1E+04 7 90 81 91 47 45 實施例40 8 2.1E+04 7 89 80 94 94 >99 實施例41 34 4.8E+05 29 90 90 90 90 90 實施例42 25 5.2E+05 21 90 90 90 90 90 實施例43 37 5.2E+05 32 90 81 90 81 90 實施例87 37 5.2E+05 32 90 81 90 75 90 實施例44 30 3.2E+03 25 78 70 82 70 83 實施例45 10 1.8E+02 8 78 70 82 70 88 實施例46 11 7.5E+01 9 73 66 77 66 88 實施例47 2 4.7E-01 2 73 66 77 66 88 實施例48 42 7.6E+07 35 78 70 82 70 78 實施例49 82 2.3E+10 70 88 79 73 79 88 實施例50 121 2.2E+13 103 78 83 78 83 88 實施例51 31 3.2E+05 26 88 44 88 44 82 實施例52 49 2.7E+05 41 88 88 88 88 76 實施例53 2 5.2E-01 2 88 79 93 79 64 實施例54 172 9.0E+13 146 88 79 96 79 83 實施例55 0.08 6.0E+01 0.07 96 86 93 70 93 實施例56 282 4.9E+11 240 88 83 78 83 83 實施例57 16 4.4E+05 14 16 15 17 55 65 實施例58 12 4.0E+05 10 3 2 4 2 73 實施例59 13 3.8E+04 11 >99 >99 >99 >99 90 實施例60 10 2.7E+04 8 77 69 78 40 45 實施例61 10 2.7E+04 8 76 68 80 76 >99 實施例62 42 6.0E+05 36 80 86 79 86 90 實施例63 32 6.5E+05 27 85 78 80 78 90 比較例1 47 2.9E+00 40 94 85 94 85 90 比較例2 37 6.3E+12 32 82 74 86 74 90 [Table 10] Table 1 [Part 2] <4> liquid medicine Al ion amount (mass ppt) Oxidized Fe particles/Fe ions Fe ion amount (mass ppt) Proportion of Ti oxide particles (mass %) Proportion of oxidized Fe particles (mass %) Proportion of oxidized Al particles (mass %) Proportion of oxidized Cu particles (mass %) Proportion of 0.5-17nm Ti oxide particles (mass %) Example 33 138 7.2E+13 117 84 75 91 75 79 Example 34 0.09 4.8E+01 0.07 91 82 88 67 88 Example 35 226 3.9E+11 192 84 79 74 79 79 Example 36 13 3.5E+05 11 19 17 20 64 76 Example 37 10 3.2E+05 8 4 3 5 3 86 Example 38 11 3.1E+04 9 >99 >99 >99 >99 86 Example 39 8 2.1E+04 7 90 81 91 47 45 Example 40 8 2.1E+04 7 89 80 94 94 >99 Example 41 34 4.8E+05 29 90 90 90 90 90 Example 42 25 5.2E+05 twenty one 90 90 90 90 90 Example 43 37 5.2E+05 32 90 81 90 81 90 Example 87 37 5.2E+05 32 90 81 90 75 90 Example 44 30 3.2E+03 25 78 70 82 70 83 Example 45 10 1.8E+02 8 78 70 82 70 88 Example 46 11 7.5E+01 9 73 66 77 66 88 Example 47 2 4.7E-01 2 73 66 77 66 88 Example 48 42 7.6E+07 35 78 70 82 70 78 Example 49 82 2.3E+10 70 88 79 73 79 88 Example 50 121 2.2E+13 103 78 83 78 83 88 Example 51 31 3.2E+05 26 88 44 88 44 82 Example 52 49 2.7E+05 41 88 88 88 88 76 Example 53 2 5.2E-01 2 88 79 93 79 64 Example 54 172 9.0E+13 146 88 79 96 79 83 Example 55 0.08 6.0E+01 0.07 96 86 93 70 93 Example 56 282 4.9E+11 240 88 83 78 83 83 Example 57 16 4.4E+05 14 16 15 17 55 65 Example 58 12 4.0E+05 10 3 2 4 2 73 Example 59 13 3.8E+04 11 >99 >99 >99 >99 90 Example 60 10 2.7E+04 8 77 69 78 40 45 Example 61 10 2.7E+04 8 76 68 80 76 >99 Example 62 42 6.0E+05 36 80 86 79 86 90 Example 63 32 6.5E+05 27 85 78 80 78 90 Comparative example 1 47 2.9E+00 40 94 85 94 85 90 Comparative example 2 37 6.3E+12 32 82 74 86 74 90

[表11] 表1 [其2] <5> 藥液 填充容器 0.5-17nm的 氧化Fe粒子的比例 (質量%) 0.5-17nm的 氧化Al粒子的比例 (質量%) 0.5-17nm的 氧化Cu粒子的比例 (質量%) 水分量 有機雜質量 (質量ppt) 實施例33 74 74 74 <500ppb 16161 EP-SUS 實施例34 80 74 80 <500ppb 8754 EP-SUS 實施例35 70 79 70 <500ppb 13555 EP-SUS 實施例36 76 71 76 <500ppb 14007 EP-SUS 實施例37 81 76 81 <500ppb 15007 EP-SUS 實施例38 76 68 76 <500ppb 12006 EP-SUS 實施例39 40 55 40 <500ppb 12359 EP-SUS 實施例40 >99 >99 >99 <500ppb 13131 EP-SUS 實施例41 90 90 90 <500ppb <1 EP-SUS 實施例42 90 90 90 <500ppb 1521525 EP-SUS 實施例43 81 95 81 <500ppb 11030 EP-SUS 實施例87 81 95 83 600ppb 11030 EP-SUS 實施例44 83 83 83 <500ppb 11375 EP-SUS 實施例45 88 88 88 <500ppb 12999 EP-SUS 實施例46 79 92 79 <500ppb 14559 EP-SUS 實施例47 79 91 79 <500ppb 15166 EP-SUS 實施例48 70 63 70 <500ppb 11375 EP-SUS 實施例49 79 71 79 <500ppb 8089 EP-SUS 實施例50 79 83 79 <500ppb 9579 EP-SUS 實施例51 83 88 83 <500ppb 11375 PFA 實施例52 83 88 83 <500ppb 12999 EP-SUS 實施例53 58 63 58 <500ppb 14559 PFA 實施例54 78 78 78 <500ppb 13999 PFA 實施例55 83 78 83 <500ppb 7583 PFA 實施例56 73 83 73 <500ppb 11741 PFA 實施例57 65 61 65 <500ppb 12133 PFA 實施例58 69 65 69 <500ppb 12999 PFA 實施例59 80 72 80 <500ppb 10400 PFA 實施例60 40 55 40 <500ppb 10705 PFA 實施例61 >99 >99 >99 <500ppb 11375 PFA 實施例62 90 90 90 <500ppb <1 PFA 實施例63 90 90 90 <500ppb 1502701 PFA 比較例1 81 95 81 <500ppb 12825 EP-SUS 比較例2 81 95 81 <500ppb 10590 EP-SUS [Table 11] Table 1 [Part 2] <5> liquid medicine fill container Proportion of 0.5-17nm Fe oxide particles (mass %) Proportion of 0.5-17 nm oxidized Al particles (mass %) Proportion of 0.5-17nm oxidized Cu particles (mass %) Moisture content Amount of organic impurities (mass ppt) Example 33 74 74 74 <500ppb 16161 EP-SUS Example 34 80 74 80 <500ppb 8754 EP-SUS Example 35 70 79 70 <500ppb 13555 EP-SUS Example 36 76 71 76 <500ppb 14007 EP-SUS Example 37 81 76 81 <500ppb 15007 EP-SUS Example 38 76 68 76 <500ppb 12006 EP-SUS Example 39 40 55 40 <500ppb 12359 EP-SUS Example 40 >99 >99 >99 <500ppb 13131 EP-SUS Example 41 90 90 90 <500ppb <1 EP-SUS Example 42 90 90 90 <500ppb 1521525 EP-SUS Example 43 81 95 81 <500ppb 11030 EP-SUS Example 87 81 95 83 600ppb 11030 EP-SUS Example 44 83 83 83 <500ppb 11375 EP-SUS Example 45 88 88 88 <500ppb 12999 EP-SUS Example 46 79 92 79 <500ppb 14559 EP-SUS Example 47 79 91 79 <500ppb 15166 EP-SUS Example 48 70 63 70 <500ppb 11375 EP-SUS Example 49 79 71 79 <500ppb 8089 EP-SUS Example 50 79 83 79 <500ppb 9579 EP-SUS Example 51 83 88 83 <500ppb 11375 PFA Example 52 83 88 83 <500ppb 12999 EP-SUS Example 53 58 63 58 <500ppb 14559 PFA Example 54 78 78 78 <500ppb 13999 PFA Example 55 83 78 83 <500ppb 7583 PFA Example 56 73 83 73 <500ppb 11741 PFA Example 57 65 61 65 <500ppb 12133 PFA Example 58 69 65 69 <500ppb 12999 PFA Example 59 80 72 80 <500ppb 10400 PFA Example 60 40 55 40 <500ppb 10705 PFA Example 61 >99 >99 >99 <500ppb 11375 PFA Example 62 90 90 90 <500ppb <1 PFA Example 63 90 90 90 <500ppb 1502701 PFA Comparative example 1 81 95 81 <500ppb 12825 EP-SUS Comparative example 2 81 95 81 <500ppb 10590 EP-SUS

[表12] 表1 [其2] <6> 評價 Si上的金屬殘渣 Si上的複合物殘渣 Si上的色斑殘渣 SiO 2上的金屬殘渣 SiO 2上的複合物殘渣 實施例33 B A A D A 實施例34 A D A A D 實施例35 B C A B C 實施例36 B A A A B 實施例37 C B A B C 實施例38 B D A D D 實施例39 B B A C B 實施例40 A C A D C 實施例41 A A D A A 實施例42 A A D A A 實施例43 A A A A A 實施例87 B A A B A 實施例44 A A A A A 實施例45 A B A A B 實施例46 A C A A C 實施例47 A D A A C 實施例48 A A A B A 實施例49 B B A C A 實施例50 C B A D B 實施例51 A B A A C 實施例52 B A A D A 實施例53 A B A A C 實施例54 B A A D A 實施例55 A D A A D 實施例56 B C A B C 實施例57 B A A A B 實施例58 C B A B C 實施例59 B D A D D 實施例60 B B A C B 實施例61 A C A D C 實施例62 A A D A A 實施例63 A A D A A 比較例1 E D A E C 比較例2 D E A E D [Table 12] Table 1 [Part 2] <6> Evaluation Metal residue on Si Complex residue on Si stain residue on Si Metal residue on SiO2 Complex residue on SiO2 Example 33 B A A D A Example 34 A D A A D Example 35 B C A B C Example 36 B A A A B Example 37 C B A B C Example 38 B D A D D Example 39 B B A C B Example 40 A C A D C Example 41 A A D A A Example 42 A A D A A Example 43 A A A A A Example 87 B A A B A Example 44 A A A A A Example 45 A B A A B Example 46 A C A A C Example 47 A D A A C Example 48 A A A B A Example 49 B B A C A Example 50 C B A D B Example 51 A B A A C Example 52 B A A D A Example 53 A B A A C Example 54 B A A D A Example 55 A D A A D Example 56 B C A B C Example 57 B A A A B Example 58 C B A B C Example 59 B D A D D Example 60 B B A C B Example 61 A C A D C Example 62 A A D A A Example 63 A A D A A Comparative example 1 E D A E C Comparative example 2 D E A E D

[表13] 表1 [其3] <1> 有機溶劑 用途 原料 蒸餾純化 過濾器1 實施例64 nBA 用途2 原料7 有-1 Purasol SP 200nm 實施例88 nBA 用途2 原料7 有-1 Purasol SP 200nm 實施例65 nBA 用途2 原料7 有-1 Purasol SP 200nm 實施例66 nBA 用途2 原料8 有-1 Purasol SP 200nm 實施例67 nBA 用途2 原料7 有-1 Purasol SP 200nm 實施例68 nBA 用途2 原料7 有-1 Purasol SP 200nm 實施例69 nBA 用途2 原料7 有-1 Purasol SP 200nm 實施例70 nBA 用途2 原料7 有-1 Purasol SP 200nm 實施例71 nBA 用途2 原料7 有-1 Purasol SP 200nm 實施例72 nBA 用途2 原料7 有-1 Purasol SP 200nm 實施例73 nBA 用途2 原料7 有-1 Purasol SP 200nm 實施例74 nBA 用途2 原料7 有-1 Purasol SP 200nm 實施例75 nBA 用途2 原料7 有-1 Purasol SP 200nm 實施例76 nBA 用途2 原料7 有-1 Purasol SP 200nm 實施例77 nBA 用途2 原料7 有-1 Purasol SP 200nm 實施例78 nBA 用途2 原料7 有-1 Purasol SP 200nm 實施例79 nBA 用途2 原料7 有-1 Purasol SP 200nm 實施例80 nBA 用途2 原料7 有-1 Purasol SP 200nm 實施例81 nBA 用途2 原料7 有-1 Purasol SP 200nm 實施例82 nBA 用途2 原料7 有-1 Purasol SP 200nm 實施例83 nBA 用途2 原料8 有-2 Purasol SP 200nm 實施例84 nBA 用途2 原料8 有-3 Purasol SP 200nm 比較例3 nBA 用途2 原料7 有-1 PP 200nm 比較例4 nBA 用途2 原料7 有-1 Purasol SP 200nm [Table 13] Table 1 [Part 3] <1> organic solvent use raw material Distillation and purification filter 1 Example 64 nBA Purpose 2 Raw material 7 There is -1 Purasol SP 200nm Example 88 nBA Purpose 2 Raw material 7 There is -1 Purasol SP 200nm Example 65 nBA Purpose 2 Raw material 7 There is -1 Purasol SP 200nm Example 66 nBA Purpose 2 Ingredients 8 There is -1 Purasol SP 200nm Example 67 nBA Purpose 2 Raw material 7 There is -1 Purasol SP 200nm Example 68 nBA Purpose 2 Raw material 7 There is -1 Purasol SP 200nm Example 69 nBA Purpose 2 Raw material 7 There is -1 Purasol SP 200nm Example 70 nBA Purpose 2 Raw material 7 There is -1 Purasol SP 200nm Example 71 nBA Purpose 2 Raw material 7 There is -1 Purasol SP 200nm Example 72 nBA Purpose 2 Raw material 7 There is -1 Purasol SP 200nm Example 73 nBA Purpose 2 Raw material 7 There is -1 Purasol SP 200nm Example 74 nBA Purpose 2 Raw material 7 There is -1 Purasol SP 200nm Example 75 nBA Purpose 2 Raw material 7 There is -1 Purasol SP 200nm Example 76 nBA Purpose 2 Raw material 7 There is -1 Purasol SP 200nm Example 77 nBA Purpose 2 Raw material 7 There is -1 Purasol SP 200nm Example 78 nBA Purpose 2 Raw material 7 There is -1 Purasol SP 200nm Example 79 nBA Purpose 2 Raw material 7 There is -1 Purasol SP 200nm Example 80 nBA Purpose 2 Raw material 7 There is -1 Purasol SP 200nm Example 81 nBA Purpose 2 Raw material 7 There is -1 Purasol SP 200nm Example 82 nBA Purpose 2 Raw material 7 There is -1 Purasol SP 200nm Example 83 nBA Purpose 2 Ingredients 8 There are -2 Purasol SP 200nm Example 84 nBA Purpose 2 Ingredients 8 There are 3 Purasol SP 200nm Comparative example 3 nBA Purpose 2 Raw material 7 There is -1 PP 200nm Comparative example 4 nBA Purpose 2 Raw material 7 There is -1 Purasol SP 200nm

[表14] 表1 [其3] <2> 過濾器2 過濾器3 過濾器4 過濾器5 過濾器6 過濾器7 實施例64 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm 實施例88 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm 實施例65 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm 實施例66 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm UPE1nm 實施例67 IEX 15nm PTFE 10nm Nylon 5nm UPE1nm UPE1nm 實施例68 IEX 15nm PTFE 10nm PTFE 5nm Nylon 5nm UPE1nm UPE1nm 實施例69 IEX 15nm IEX 15nm PTFE 10nm PTFE 5nm 實施例70 IEX 15nm IEX 15nm PTFE 10nm PTFE 7nm 實施例71 IEX 15nm IEX 15nm PTFE 10nm PTFE 10nm 實施例72 IEX 15nm Oktolex 5nm PTFE 10nm Nylon 5nm UPE3nm 實施例73 IEX 15nm Nylon 5nm Nylon 5nm Nylon 5nm UPE3nm 實施例74 IEX 15nm IEX 15nm PTFE 10nm Nylon 5nm UPE3nm 實施例75 IEX 15nm PTFE 10nm PTFE 7nm PTFE 5nm UPE3nm 實施例76 IEX 15nm IEX 15nm Nylon 5nm Nylon 5nm UPE1nm 實施例77 PTFE 10nm PTFE 10nm Nylon 5nm UPE3nm 實施例78 IEX 15nm IEX 15nm PTFE 10nm UPE3nm UPE3nm UPE1nm 實施例79 IEX 15nm PTFE 5nm UPE3nm UPE1nm UPE1nm UPE1nm 實施例80 IEX 15nm PTFE 10nm PTFE 5nm Nylon 5nm 實施例81 IEX 15nm IEX 15nm IEX 16nm Nylon 5nm Nylon 5nm UPE1nm 實施例82 IEX 15nm PTFE 10nm UPE3nm UPE3nm UPE3nm 實施例83 IEX 15nm PTFE 10nm Nylon 5nm UPE5nm UPE3nm 實施例84 IEX 15nm PTFE 10nm Nylon 5nm UPE5nm UPE3nm 比較例3 PTFE 10nm PTFE 10nm PTFE 7nm PTFE 5nm UPE1nm UPE1nm 比較例4 IEX 15nm IEX 15nm PTFE 50nm PTFE 50nm UPE5nm [Table 14] Table 1 [Part 3] <2> filter 2 filter 3 filter 4 filter 5 filter 6 filter 7 Example 64 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm Example 88 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm Example 65 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm Example 66 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm UPE1nm Example 67 IEX 15nm PTFE 10nm Nylon 5nm UPE1nm UPE1nm Example 68 IEX 15nm PTFE 10nm PTFE 5nm Nylon 5nm UPE1nm UPE1nm Example 69 IEX 15nm IEX 15nm PTFE 10nm PTFE 5nm Example 70 IEX 15nm IEX 15nm PTFE 10nm PTFE 7nm Example 71 IEX 15nm IEX 15nm PTFE 10nm PTFE 10nm Example 72 IEX 15nm Oktolex 5nm PTFE 10nm Nylon 5nm UPE3nm Example 73 IEX 15nm Nylon 5nm Nylon 5nm Nylon 5nm UPE3nm Example 74 IEX 15nm IEX 15nm PTFE 10nm Nylon 5nm UPE3nm Example 75 IEX 15nm PTFE 10nm PTFE 7nm PTFE 5nm UPE3nm Example 76 IEX 15nm IEX 15nm Nylon 5nm Nylon 5nm UPE1nm Example 77 PTFE 10nm PTFE 10nm Nylon 5nm UPE3nm Example 78 IEX 15nm IEX 15nm PTFE 10nm UPE3nm UPE3nm UPE1nm Example 79 IEX 15nm PTFE 5nm UPE3nm UPE1nm UPE1nm UPE1nm Example 80 IEX 15nm PTFE 10nm PTFE 5nm Nylon 5nm Example 81 IEX 15nm IEX 15nm IEX 16nm Nylon 5nm Nylon 5nm UPE1nm Example 82 IEX 15nm PTFE 10nm UPE3nm UPE3nm UPE3nm Example 83 IEX 15nm PTFE 10nm Nylon 5nm UPE5nm UPE3nm Example 84 IEX 15nm PTFE 10nm Nylon 5nm UPE5nm UPE3nm Comparative example 3 PTFE 10nm PTFE 10nm PTFE 7nm PTFE 5nm UPE1nm UPE1nm Comparative example 4 IEX 15nm IEX 15nm PTFE 50nm PTFE 50nm UPE5nm

[表15] 表1 [其3] <3> 藥液 氧化Ti粒子/ Ti離子 Ti離子量 (質量ppt) 氧化Fe粒子/ Fe離子 Fe離子量 (質量ppt) 氧化Al粒子/ Al離子 實施例64 3.4E+04 15 4.9E+04 21 7.1E+04 實施例88 3.4E+04 15 4.9E+04 21 7.1E+04 實施例65 2.1E+02 12 3.0E+02 17 4.3E+02 實施例66 1.2E+01 8 1.7E+01 11 2.4E+01 實施例67 4.9E+00 1 7.0E+00 1 1.0E+01 實施例68 1.9E+00 1 6.5E-01 1 9.4E-01 實施例69 4.9E+06 8 7.2E+06 11 1.0E+07 實施例70 1.5E+09 31 2.2E+09 45 3.1E+09 實施例71 3.4E+11 49 1.6E+12 72 3.0E+12 實施例72 2.7E+04 13 6.5E-01 2 4.4E+04 實施例73 4.0E+04 12 4.9E+12 82 3.6E+04 實施例74 4.4E+04 15 4.6E+04 18 9.4E-01 實施例75 4.4E+04 15 6.3E+04 26 1.2E+13 實施例76 3.9E+00 0.08 5.6E+00 0.06 8.2E+00 實施例77 3.2E+10 109.61 4.6E+10 159 6.7E+10 實施例78 2.9E+04 16 4.1E+04 14 6.0E+04 實施例79 2.6E+04 12 3.7E+04 11 5.4E+04 實施例80 2.5E+03 13 3.6E+03 12 5.2E+03 實施例81 1.6E+03 9 2.4E+03 8 3.5E+03 實施例82 1.6E+03 9 2.4E+03 8 3.5E+03 實施例83 3.7E+04 16 5.3E+04 23 7.7E+04 實施例84 4.0E+04 12 5.8E+04 17 8.4E+04 比較例3 6.0E-01 18 5.4E-01 26 4.9E-01 比較例4 1.3E+12 15 1.2E+12 21 1.0E+12 [Table 15] Table 1 [Part 3] <3> liquid medicine Oxidized Ti particles/Ti ions Ti ion amount (mass ppt) Oxidized Fe particles/Fe ions Fe ion amount (mass ppt) Oxidized Al particles/Al ions Example 64 3.4E+04 15 4.9E+04 twenty one 7.1E+04 Example 88 3.4E+04 15 4.9E+04 twenty one 7.1E+04 Example 65 2.1E+02 12 3.0E+02 17 4.3E+02 Example 66 1.2E+01 8 1.7E+01 11 2.4E+01 Example 67 4.9E+00 1 7.0E+00 1 1.0E+01 Example 68 1.9E+00 1 6.5E-01 1 9.4E-01 Example 69 4.9E+06 8 7.2E+06 11 1.0E+07 Example 70 1.5E+09 31 2.2E+09 45 3.1E+09 Example 71 3.4E+11 49 1.6E+12 72 3.0E+12 Example 72 2.7E+04 13 6.5E-01 2 4.4E+04 Example 73 4.0E+04 12 4.9E+12 82 3.6E+04 Example 74 4.4E+04 15 4.6E+04 18 9.4E-01 Example 75 4.4E+04 15 6.3E+04 26 1.2E+13 Example 76 3.9E+00 0.08 5.6E+00 0.06 8.2E+00 Example 77 3.2E+10 109.61 4.6E+10 159 6.7E+10 Example 78 2.9E+04 16 4.1E+04 14 6.0E+04 Example 79 2.6E+04 12 3.7E+04 11 5.4E+04 Example 80 2.5E+03 13 3.6E+03 12 5.2E+03 Example 81 1.6E+03 9 2.4E+03 8 3.5E+03 Example 82 1.6E+03 9 2.4E+03 8 3.5E+03 Example 83 3.7E+04 16 5.3E+04 twenty three 7.7E+04 Example 84 4.0E+04 12 5.8E+04 17 8.4E+04 Comparative example 3 6.0E-01 18 5.4E-01 26 4.9E-01 Comparative example 4 1.3E+12 15 1.2E+12 twenty one 1.0E+12

[表16] 表1 [其3] <4> 藥液 Al離子量 (質量ppt) 氧化Fe粒子/Fe離子 Fe離子量 (質量ppt) 氧化Ti粒子比例 (質量%) 氧化Fe粒子比例 (質量%) 氧化Al粒子比例 (質量%) 氧化Cu粒子比例 (質量%) 0.5-17nm的氧化Ti粒子的比例 (質量%) 實施例64 31 4.3E+05 26 86 77 86 77 86 實施例88 31 4.3E+05 26 86 77 86 73 86 實施例65 24 2.6E+03 21 76 80 80 80 81 實施例66 8 1.5E+02 7 76 68 80 77 86 實施例67 9 6.1E+01 7 71 64 75 80 86 實施例68 2 8.0E-01 2 71 64 75 80 86 實施例69 34 6.2E+07 29 76 68 80 55 76 實施例70 67 1.9E+10 57 86 77 71 62 86 實施例71 99 1.8E+13 84 76 81 76 81 86 實施例72 25 2.7E+05 21 86 43 86 43 80 實施例73 40 2.2E+05 34 86 86 86 86 74 實施例74 2 5.6E+00 2 86 77 90 77 63 實施例75 141 7.3E+13 120 86 77 93 77 81 實施例76 0.09 4.9E+01 0.08 93 84 90 68 90 實施例77 230 4.0E+11 196 86 81 76 81 81 實施例78 13 3.6E+05 11 20 18 21 18 80 實施例79 10 3.2E+05 9 4 3 5 3 90 實施例80 11 3.1E+04 9 >99 >99 >99 >99 90 實施例81 8 2.1E+04 6 90 81 91 47 45 實施例82 8 2.1E+04 6 89 80 94 89 >99 實施例83 33 4.6E+05 28 86 77 86 77 86 實施例84 24 5.0E+05 21 86 77 86 77 86 比較例3 1 2.9E+00 1 81 73 81 73 81 比較例4 1 6.3E+12 1 71 64 74 68 75 [Table 16] Table 1 [Part 3] <4> liquid medicine Al ion amount (mass ppt) Oxidized Fe particles/Fe ions Fe ion amount (mass ppt) Proportion of Ti oxide particles (mass %) Proportion of oxidized Fe particles (mass %) Proportion of oxidized Al particles (mass %) Proportion of oxidized Cu particles (mass %) Proportion of 0.5-17nm Ti oxide particles (mass %) Example 64 31 4.3E+05 26 86 77 86 77 86 Example 88 31 4.3E+05 26 86 77 86 73 86 Example 65 twenty four 2.6E+03 twenty one 76 80 80 80 81 Example 66 8 1.5E+02 7 76 68 80 77 86 Example 67 9 6.1E+01 7 71 64 75 80 86 Example 68 2 8.0E-01 2 71 64 75 80 86 Example 69 34 6.2E+07 29 76 68 80 55 76 Example 70 67 1.9E+10 57 86 77 71 62 86 Example 71 99 1.8E+13 84 76 81 76 81 86 Example 72 25 2.7E+05 twenty one 86 43 86 43 80 Example 73 40 2.2E+05 34 86 86 86 86 74 Example 74 2 5.6E+00 2 86 77 90 77 63 Example 75 141 7.3E+13 120 86 77 93 77 81 Example 76 0.09 4.9E+01 0.08 93 84 90 68 90 Example 77 230 4.0E+11 196 86 81 76 81 81 Example 78 13 3.6E+05 11 20 18 twenty one 18 80 Example 79 10 3.2E+05 9 4 3 5 3 90 Example 80 11 3.1E+04 9 >99 >99 >99 >99 90 Example 81 8 2.1E+04 6 90 81 91 47 45 Example 82 8 2.1E+04 6 89 80 94 89 >99 Example 83 33 4.6E+05 28 86 77 86 77 86 Example 84 twenty four 5.0E+05 twenty one 86 77 86 77 86 Comparative example 3 1 2.9E+00 1 81 73 81 73 81 Comparative example 4 1 6.3E+12 1 71 64 74 68 75

[表17] 表1 [其3] <5> 藥液 填充容器 0.5-17nm的氧化 Fe粒子的比例 (質量%) 0.5-17nm的氧化 Al粒子的比例 (質量%) 0.5-17nm的氧化 Cu粒子的比例 (質量%) 水分量 有機雜質量 (質量ppt) 實施例64 77 90 77 <500ppb 18317 EP-SUS 實施例88 77 90 81 750ppb 18317 EP-SUS 實施例65 81 81 81 <500ppb 18488 EP-SUS 實施例66 86 86 86 <500ppb 23110 EP-SUS 實施例67 77 89 77 <500ppb 27733 EP-SUS 實施例68 77 88 77 <500ppb 33279 EP-SUS 實施例69 68 62 68 <500ppb 33279 EP-SUS 實施例70 77 69 77 <500ppb 33279 EP-SUS 實施例71 77 81 77 <500ppb 31713 EP-SUS 實施例72 81 86 81 <500ppb 23880 EP-SUS 實施例73 81 86 81 <500ppb 22553 EP-SUS 實施例74 56 62 56 <500ppb 16539 EP-SUS 實施例75 76 76 76 <500ppb 16335 EP-SUS 實施例76 81 76 81 <500ppb 15835 EP-SUS 實施例77 71 81 71 <500ppb 13972 EP-SUS 實施例78 80 75 80 <500ppb 17008 EP-SUS 實施例79 85 80 85 <500ppb 18631 PFA 實施例80 80 72 80 <500ppb 17568 EP-SUS 實施例81 40 55 40 <500ppb 28693 EP-SUS 實施例82 >99 >99 >99 <500ppb 23984 EP-SUS 實施例83 86 86 86 <500ppb <1 EP-SUS 實施例84 86 86 86 <500ppb 1451800 EP-SUS 比較例3 73 86 73 <500ppb 21980 EP-SUS 比較例4 75 75 75 <500ppb 17401 EP-SUS [Table 17] Table 1 [Part 3] <5> liquid medicine fill container Proportion of 0.5-17nm Fe oxide particles (mass %) Proportion of 0.5-17nm oxidized Al particles (mass %) Proportion of 0.5-17nm oxidized Cu particles (mass %) Moisture content Amount of organic impurities (mass ppt) Example 64 77 90 77 <500ppb 18317 EP-SUS Example 88 77 90 81 750 ppb 18317 EP-SUS Example 65 81 81 81 <500ppb 18488 EP-SUS Example 66 86 86 86 <500ppb 23110 EP-SUS Example 67 77 89 77 <500ppb 27733 EP-SUS Example 68 77 88 77 <500ppb 33279 EP-SUS Example 69 68 62 68 <500ppb 33279 EP-SUS Example 70 77 69 77 <500ppb 33279 EP-SUS Example 71 77 81 77 <500ppb 31713 EP-SUS Example 72 81 86 81 <500ppb 23880 EP-SUS Example 73 81 86 81 <500ppb 22553 EP-SUS Example 74 56 62 56 <500ppb 16539 EP-SUS Example 75 76 76 76 <500ppb 16335 EP-SUS Example 76 81 76 81 <500ppb 15835 EP-SUS Example 77 71 81 71 <500ppb 13972 EP-SUS Example 78 80 75 80 <500ppb 17008 EP-SUS Example 79 85 80 85 <500ppb 18631 PFA Example 80 80 72 80 <500ppb 17568 EP-SUS Example 81 40 55 40 <500ppb 28693 EP-SUS Example 82 >99 >99 >99 <500ppb 23984 EP-SUS Example 83 86 86 86 <500ppb <1 EP-SUS Example 84 86 86 86 <500ppb 1451800 EP-SUS Comparative example 3 73 86 73 <500ppb 21980 EP-SUS Comparative example 4 75 75 75 <500ppb 17401 EP-SUS

[表18] 表1 [其3] <6> 評價 Si上的金屬殘渣 Si上的複合物殘渣 Si上的色斑殘渣 SiO 2上的金屬殘渣 SiO 2上的複合物殘渣 實施例64 A A A A A 實施例88 B A A B A 實施例65 A A A A A 實施例66 A B A A B 實施例67 A C A A C 實施例68 A C A A D 實施例69 B A A A A 實施例70 C A A B A 實施例71 D B A C B 實施例72 A C A A B 實施例73 D A A B A 實施例74 A C A A B 實施例75 D A A B A 實施例76 A D A A D 實施例77 B C A B C 實施例78 A B A B A 實施例79 B C A C B 實施例80 D D A B D 實施例81 C B A B B 實施例82 D C A A C 實施例83 A A D A A 實施例84 A A D A A 比較例3 E C A E D 比較例4 E D A D E [Table 18] Table 1 [Part 3] <6> Evaluation Metal residue on Si Complex residue on Si stain residue on Si Metal residue on SiO2 Complex residue on SiO2 Example 64 A A A A A Example 88 B A A B A Example 65 A A A A A Example 66 A B A A B Example 67 A C A A C Example 68 A C A A D Example 69 B A A A A Example 70 C A A B A Example 71 D B A C B Example 72 A C A A B Example 73 D A A B A Example 74 A C A A B Example 75 D A A B A Example 76 A D A A D Example 77 B C A B C Example 78 A B A B A Example 79 B C A C B Example 80 D D A B D Example 81 C B A B B Example 82 D C A A C Example 83 A A D A A Example 84 A A D A A Comparative example 3 E C A E D Comparative example 4 E D A D E

[表19] 表1 [其4] <1> 有機溶劑 用途 原料 蒸餾純化 過濾器1 實施例89 EL 用途1 原料8 有-1 Purasol SP 200nm 實施例90 PC 用途1 原料8 有-1 Purasol SP 200nm 實施例91 IPA 用途1 原料8 有-1 Purasol SP 200nm 實施例92 PGMEE 用途1 原料8 有-1 Purasol SP 200nm 實施例93 PGMPE 用途1 原料8 有-1 Purasol SP 200nm 實施例94 甲氧基丙酸甲酯 用途1 原料8 有-1 Purasol SP 200nm 實施例95 CPN 用途1 原料8 有-1 Purasol SP 200nm 實施例96 γ-丁內酯 用途1 原料8 有-1 Purasol SP 200nm 實施例97 二異戊醚 用途1 原料8 有-1 Purasol SP 200nm 實施例98 乙酸異戊酯 用途1 原料8 有-1 Purasol SP 200nm 實施例99 二甲基亞碸 用途1 原料8 有-1 Purasol SP 200nm 實施例100 N-甲基吡咯啶酮 用途1 原料8 有-1 Purasol SP 200nm 實施例101 二乙二醇 用途1 原料8 有-1 Purasol SP 200nm 實施例102 乙二醇 用途1 原料8 有-1 Purasol SP 200nm 實施例103 二丙二醇 用途1 原料8 有-1 Purasol SP 200nm 實施例104 丙二醇 用途1 原料8 有-1 Purasol SP 200nm 實施例105 碳酸乙二酯 用途1 原料8 有-1 Purasol SP 200nm 實施例106 環丁碸 用途1 原料8 有-1 Purasol SP 200nm 實施例107 環庚酮 用途1 原料8 有-1 Purasol SP 200nm 實施例108 2-庚酮 用途1 原料8 有-1 Purasol SP 200nm 實施例109 丁酸丁酯 用途1 原料8 有-1 Purasol SP 200nm 實施例110 異丁酸異丁酯 用途1 原料8 有-1 Purasol SP 200nm 實施例111 異戊基醚 用途1 原料8 有-1 Purasol SP 200nm 實施例112 十一烷 用途1 原料8 有-1 Purasol SP 200nm [Table 19] Table 1 [Part 4] <1> organic solvent use raw material Distillation and purification filter 1 Example 89 EL Purpose 1 Ingredients 8 There is -1 Purasol SP 200nm Example 90 PC Purpose 1 Ingredients 8 There is -1 Purasol SP 200nm Example 91 IPA Purpose 1 Ingredients 8 There is -1 Purasol SP 200nm Example 92 PGMEE Purpose 1 Ingredients 8 There is -1 Purasol SP 200nm Example 93 PGMPE Purpose 1 Ingredients 8 There is -1 Purasol SP 200nm Example 94 Methyl methoxypropionate Purpose 1 Ingredients 8 There is -1 Purasol SP 200nm Example 95 CPN Purpose 1 Ingredients 8 There is -1 Purasol SP 200nm Example 96 γ-butyrolactone Purpose 1 Ingredients 8 There is -1 Purasol SP 200nm Example 97 Diisoamyl ether Purpose 1 Ingredients 8 There is -1 Purasol SP 200nm Example 98 Isoamyl acetate Purpose 1 Ingredients 8 There is -1 Purasol SP 200nm Example 99 DMSO Purpose 1 Ingredients 8 There is -1 Purasol SP 200nm Example 100 N-methylpyrrolidone Purpose 1 Ingredients 8 There is -1 Purasol SP 200nm Example 101 diethylene glycol Purpose 1 Ingredients 8 There is -1 Purasol SP 200nm Example 102 Ethylene glycol Purpose 1 Ingredients 8 There is -1 Purasol SP 200nm Example 103 dipropylene glycol Purpose 1 Ingredients 8 There is -1 Purasol SP 200nm Example 104 propylene glycol Purpose 1 Ingredients 8 There is -1 Purasol SP 200nm Example 105 Ethylene carbonate Purpose 1 Ingredients 8 There is -1 Purasol SP 200nm Example 106 cyclotenine Purpose 1 Ingredients 8 There is -1 Purasol SP 200nm Example 107 Cycloheptanone Purpose 1 Ingredients 8 There is -1 Purasol SP 200nm Example 108 2-Heptanone Purpose 1 Ingredients 8 There is -1 Purasol SP 200nm Example 109 Butyl butyrate Purpose 1 Ingredients 8 There is -1 Purasol SP 200nm Example 110 Isobutyl isobutyrate Purpose 1 Ingredients 8 There is -1 Purasol SP 200nm Example 111 Isoamyl ether Purpose 1 Ingredients 8 There is -1 Purasol SP 200nm Example 112 undecane Purpose 1 Ingredients 8 There is -1 Purasol SP 200nm

[表20] 表1 [其4] <2> 過濾器2 過濾器3 過濾器4 過濾器5 過濾器6 過濾器7 實施例89 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm 實施例90 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm 實施例91 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm 實施例92 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm 實施例93 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm 實施例94 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm 實施例95 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm 實施例96 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm 實施例97 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm 實施例98 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm 實施例99 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm 實施例100 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm 實施例101 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm 實施例102 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm 實施例103 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm 實施例104 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm 實施例105 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm 實施例106 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm 實施例107 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm 實施例108 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm 實施例109 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm 實施例110 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm 實施例111 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm 實施例112 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm [Table 20] Table 1 [Part 4] <2> filter 2 filter 3 filter 4 filter 5 filter 6 filter 7 Example 89 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm Example 90 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm Example 91 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm Example 92 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm Example 93 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm Example 94 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm Example 95 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm Example 96 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm Example 97 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm Example 98 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm Example 99 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm Example 100 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm Example 101 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm Example 102 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm Example 103 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm Example 104 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm Example 105 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm Example 106 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm Example 107 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm Example 108 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm Example 109 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm Example 110 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm Example 111 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm Example 112 IEX 15nm PTFE 10nm Nylon 5nm UPE3nm

[表21] 表1 [其4] <3> 藥液 氧化Ti粒子/ Ti離子 Ti離子量 (質量ppt) 氧化Fe粒子/ Fe離子 Fe離子量 (質量ppt) 氧化Al粒子/ Al離子 實施例89 3.3E+04 15 3.9E+04 21 7.1E+04 實施例90 3.8E+04 17 4.6E+04 23 7.1E+04 實施例91 3.3E+04 15 3.9E+04 21 7.1E+04 實施例92 3.6E+04 16 4.3E+04 22 7.1E+04 實施例93 3.3E+04 15 3.9E+04 21 7.1E+04 實施例94 3.2E+04 14 3.8E+04 20 7.1E+04 實施例95 2.9E+04 13 3.5E+04 19 7.1E+04 實施例96 2.7E+04 12 3.2E+04 18 7.1E+04 實施例97 3.4E+04 15 4.1E+04 21 7.1E+04 實施例98 3.8E+04 17 4.6E+04 23 7.1E+04 實施例99 4.1E+04 18 4.9E+04 24 7.1E+04 實施例100 4.3E+04 19 5.1E+04 25 7.1E+04 實施例101 3.2E+04 14 3.8E+04 20 7.1E+04 實施例102 2.9E+04 13 3.5E+04 19 7.1E+04 實施例103 3.8E+04 17 4.6E+04 23 7.1E+04 實施例104 3.2E+04 14 3.8E+04 20 7.1E+04 實施例105 3.2E+04 14 3.8E+04 20 7.1E+04 實施例106 3.4E+04 15 4.1E+04 21 7.1E+04 實施例107 4.1E+04 18 4.9E+04 24 7.1E+04 實施例108 3.4E+04 15 4.1E+04 21 7.1E+04 實施例109 3.2E+04 14 3.8E+04 20 7.1E+04 實施例110 3.4E+04 15 4.1E+04 21 7.1E+04 實施例111 3.6E+04 16 4.3E+04 22 7.1E+04 實施例112 2.9E+04 13 3.5E+04 19 7.1E+04 [Table 21] Table 1 [Part 4] <3> liquid medicine Oxidized Ti particles/Ti ions Ti ion amount (mass ppt) Oxidized Fe particles/Fe ions Fe ion amount (mass ppt) Oxidized Al particles/Al ions Example 89 3.3E+04 15 3.9E+04 twenty one 7.1E+04 Example 90 3.8E+04 17 4.6E+04 twenty three 7.1E+04 Example 91 3.3E+04 15 3.9E+04 twenty one 7.1E+04 Example 92 3.6E+04 16 4.3E+04 twenty two 7.1E+04 Example 93 3.3E+04 15 3.9E+04 twenty one 7.1E+04 Example 94 3.2E+04 14 3.8E+04 20 7.1E+04 Example 95 2.9E+04 13 3.5E+04 19 7.1E+04 Example 96 2.7E+04 12 3.2E+04 18 7.1E+04 Example 97 3.4E+04 15 4.1E+04 twenty one 7.1E+04 Example 98 3.8E+04 17 4.6E+04 twenty three 7.1E+04 Example 99 4.1E+04 18 4.9E+04 twenty four 7.1E+04 Example 100 4.3E+04 19 5.1E+04 25 7.1E+04 Example 101 3.2E+04 14 3.8E+04 20 7.1E+04 Example 102 2.9E+04 13 3.5E+04 19 7.1E+04 Example 103 3.8E+04 17 4.6E+04 twenty three 7.1E+04 Example 104 3.2E+04 14 3.8E+04 20 7.1E+04 Example 105 3.2E+04 14 3.8E+04 20 7.1E+04 Example 106 3.4E+04 15 4.1E+04 twenty one 7.1E+04 Example 107 4.1E+04 18 4.9E+04 twenty four 7.1E+04 Example 108 3.4E+04 15 4.1E+04 twenty one 7.1E+04 Example 109 3.2E+04 14 3.8E+04 20 7.1E+04 Example 110 3.4E+04 15 4.1E+04 twenty one 7.1E+04 Example 111 3.6E+04 16 4.3E+04 twenty two 7.1E+04 Example 112 2.9E+04 13 3.5E+04 19 7.1E+04

[表22] 表1 [其4] <4> 藥液 Al離子量 (質量ppt) 氧化Fe粒子/ Fe離子 Fe離子量 (質量ppt) 氧化Ti粒子比例 (質量%) 氧化Fe粒子比例 (質量%) 氧化Al粒子比例 (質量%) 氧化Cu粒子比例 (質量%) 0.5-17nm的氧化Ti粒子的比例 (質量%) 實施例89 29 3.9E+04 21 89 79 89 82 94 實施例90 32 4.6E+04 23 92 82 92 85 97 實施例91 29 3.9E+04 21 89 79 89 82 94 實施例92 31 4.3E+04 22 91 81 91 84 96 實施例93 29 3.9E+04 21 89 79 89 82 94 實施例94 28 3.8E+04 20 88 78 88 81 93 實施例95 27 3.5E+04 19 87 77 87 80 92 實施例96 25 3.2E+04 18 85 75 85 78 90 實施例97 29 4.1E+04 21 89 79 89 82 94 實施例98 32 4.6E+04 23 92 82 92 85 97 實施例99 34 4.9E+04 24 94 84 94 87 98 實施例100 35 5.1E+04 25 95 85 95 88 95 實施例101 28 3.8E+04 20 88 78 88 81 93 實施例102 27 3.5E+04 19 87 77 87 80 92 實施例103 32 4.6E+04 23 92 82 92 85 97 實施例104 28 3.8E+04 20 88 78 88 81 93 實施例105 28 3.8E+04 20 88 78 88 81 93 實施例106 29 4.1E+04 21 89 79 89 82 94 實施例107 34 4.9E+04 24 94 84 94 87 99 實施例108 29 4.1E+04 21 89 79 89 82 94 實施例109 28 3.8E+04 20 88 78 88 81 93 實施例110 29 4.1E+04 21 89 79 89 82 94 實施例111 31 4.3E+04 22 91 81 91 84 96 實施例112 27 3.5E+04 19 87 77 87 80 92 [Table 22] Table 1 [Part 4] <4> liquid medicine Al ion amount (mass ppt) Oxidized Fe particles/Fe ions Fe ion amount (mass ppt) Proportion of Ti oxide particles (mass %) Proportion of oxidized Fe particles (mass %) Proportion of oxidized Al particles (mass %) Proportion of oxidized Cu particles (mass %) Proportion of 0.5-17nm Ti oxide particles (mass %) Example 89 29 3.9E+04 twenty one 89 79 89 82 94 Example 90 32 4.6E+04 twenty three 92 82 92 85 97 Example 91 29 3.9E+04 twenty one 89 79 89 82 94 Example 92 31 4.3E+04 twenty two 91 81 91 84 96 Example 93 29 3.9E+04 twenty one 89 79 89 82 94 Example 94 28 3.8E+04 20 88 78 88 81 93 Example 95 27 3.5E+04 19 87 77 87 80 92 Example 96 25 3.2E+04 18 85 75 85 78 90 Example 97 29 4.1E+04 twenty one 89 79 89 82 94 Example 98 32 4.6E+04 twenty three 92 82 92 85 97 Example 99 34 4.9E+04 twenty four 94 84 94 87 98 Example 100 35 5.1E+04 25 95 85 95 88 95 Example 101 28 3.8E+04 20 88 78 88 81 93 Example 102 27 3.5E+04 19 87 77 87 80 92 Example 103 32 4.6E+04 twenty three 92 82 92 85 97 Example 104 28 3.8E+04 20 88 78 88 81 93 Example 105 28 3.8E+04 20 88 78 88 81 93 Example 106 29 4.1E+04 twenty one 89 79 89 82 94 Example 107 34 4.9E+04 twenty four 94 84 94 87 99 Example 108 29 4.1E+04 twenty one 89 79 89 82 94 Example 109 28 3.8E+04 20 88 78 88 81 93 Example 110 29 4.1E+04 twenty one 89 79 89 82 94 Example 111 31 4.3E+04 twenty two 91 81 91 84 96 Example 112 27 3.5E+04 19 87 77 87 80 92

[表23] 表1 [其4] <5> 藥液 填充容器 0.5-17nm的 氧化Fe粒子的比例 (質量%) 0.5-17nm的 氧化Al粒子的比例 (質量%) 0.5-17nm的 氧化Cu粒子的比例 (質量%) 水分量 有機雜質量 (質量ppt) 實施例89 76 93 93 21098 <500ppb EP-SUS 實施例90 79 96 96 21870 <500ppb EP-SUS 實施例91 76 93 93 21098 <500ppb EP-SUS 實施例92 78 95 95 21555 <500ppb EP-SUS 實施例93 76 93 93 21098 <500ppb EP-SUS 實施例94 75 92 92 20925 <500ppb EP-SUS 實施例95 74 91 91 20610 <500ppb EP-SUS 實施例96 72 89 89 20295 <500ppb EP-SUS 實施例97 76 93 93 21240 <500ppb EP-SUS 實施例98 79 96 96 21870 <500ppb EP-SUS 實施例99 81 97 97 22050 <500ppb EP-SUS 實施例100 82 94 94 21375 <500ppb EP-SUS 實施例101 75 92 92 20925 <500ppb EP-SUS 實施例102 74 91 91 20610 <500ppb EP-SUS 實施例103 79 96 96 21870 <500ppb EP-SUS 實施例104 75 92 92 20925 <500ppb EP-SUS 實施例105 75 92 92 20925 <500ppb EP-SUS 實施例106 76 93 93 21240 <500ppb EP-SUS 實施例107 81 98 98 22185 <500ppb EP-SUS 實施例108 76 93 93 21240 <500ppb EP-SUS 實施例109 75 92 92 20925 <500ppb EP-SUS 實施例110 76 93 93 21240 <500ppb EP-SUS 實施例111 78 95 95 21555 <500ppb EP-SUS 實施例112 74 91 91 20610 <500ppb EP-SUS [Table 23] Table 1 [Part 4] <5> liquid medicine fill container Proportion of 0.5-17nm Fe oxide particles (mass %) Proportion of 0.5-17nm oxidized Al particles (mass %) Proportion of 0.5-17nm oxidized Cu particles (mass %) Moisture content Amount of organic impurities (mass ppt) Example 89 76 93 93 21098 <500ppb EP-SUS Example 90 79 96 96 21870 <500ppb EP-SUS Example 91 76 93 93 21098 <500ppb EP-SUS Example 92 78 95 95 21555 <500ppb EP-SUS Example 93 76 93 93 21098 <500ppb EP-SUS Example 94 75 92 92 20925 <500ppb EP-SUS Example 95 74 91 91 20610 <500ppb EP-SUS Example 96 72 89 89 20295 <500ppb EP-SUS Example 97 76 93 93 21240 <500ppb EP-SUS Example 98 79 96 96 21870 <500ppb EP-SUS Example 99 81 97 97 22050 <500ppb EP-SUS Example 100 82 94 94 21375 <500ppb EP-SUS Example 101 75 92 92 20925 <500ppb EP-SUS Example 102 74 91 91 20610 <500ppb EP-SUS Example 103 79 96 96 21870 <500ppb EP-SUS Example 104 75 92 92 20925 <500ppb EP-SUS Example 105 75 92 92 20925 <500ppb EP-SUS Example 106 76 93 93 21240 <500ppb EP-SUS Example 107 81 98 98 22185 <500ppb EP-SUS Example 108 76 93 93 21240 <500ppb EP-SUS Example 109 75 92 92 20925 <500ppb EP-SUS Example 110 76 93 93 21240 <500ppb EP-SUS Example 111 78 95 95 21555 <500ppb EP-SUS Example 112 74 91 91 20610 <500ppb EP-SUS

[表24] 表1 [其4] <6> 藥液 Si上的金屬殘渣 Si上的複合物殘渣 Si上的色斑殘渣 SiO 2上的金屬殘渣 SiO 2上的複合物殘渣 實施例89 A A A A A 實施例90 A A A A A 實施例91 A A A A A 實施例92 A A A A A 實施例93 A A A A A 實施例94 A A A A A 實施例95 A A A A A 實施例96 A A A A A 實施例97 A A A A A 實施例98 A A A A A 實施例99 A A A A A 實施例100 A A A A A 實施例101 A A A A A 實施例102 A A A A A 實施例103 A A A A A 實施例104 A A A A A 實施例105 A A A A A 實施例106 A A A A A 實施例107 A A A A A 實施例108 A A A A A 實施例109 A A A A A 實施例110 A A A A A 實施例111 A A A A A 實施例112 A A A A A [Table 24] Table 1 [Part 4] <6> liquid medicine Metal residue on Si Complex residue on Si stain residue on Si Metal residue on SiO2 Complex residue on SiO2 Example 89 A A A A A Example 90 A A A A A Example 91 A A A A A Example 92 A A A A A Example 93 A A A A A Example 94 A A A A A Example 95 A A A A A Example 96 A A A A A Example 97 A A A A A Example 98 A A A A A Example 99 A A A A A Example 100 A A A A A Example 101 A A A A A Example 102 A A A A A Example 103 A A A A A Example 104 A A A A A Example 105 A A A A A Example 106 A A A A A Example 107 A A A A A Example 108 A A A A A Example 109 A A A A A Example 110 A A A A A Example 111 A A A A A Example 112 A A A A A

表1中,各實施例及比較例之資料示於表1[其1]<1>~<6>、表1[其2]<1>~<6>、表1[其3]<1>~<6>及表1[其4]<1>~<6>的各行中。 例如,實施例1中,如表1[其1]<1>所示,使用CyHe作為有機溶劑,如表1[其1]<2>所示,過濾器2為“IEX 15nm”,如表1[其1]<3>所示,藥液中的氧化Ti粒子/Ti離子為3.5E+04,如表1[其1]<4>所示,Al離子量為32質量ppt,如表1[其1]<5>所示,0.5-17nm的氧化Fe粒子的比例為81質量%,如表1[其1]<6>所示,“Si上的金屬殘渣”為“A”。關於其他實施例及比較例,亦相同。 In Table 1, the data of each Example and Comparative Example are shown in Table 1 [Part 1] <1> to <6>, Table 1 [Part 2] <1> to <6>, Table 1 [Part 3] <1 >~<6> and each row of Table 1 [Part 4]<1>~<6>. For example, in Example 1, as shown in Table 1 [Part 1] <1>, CyHe is used as the organic solvent, as shown in Table 1 [Part 1] <2>, and the filter 2 is "IEX 15nm", as shown in Table 1 As shown in 1 [Part 1]<3>, the oxidized Ti particles/Ti ions in the chemical solution are 3.5E+04, as shown in Table 1 [Part 1]<4>, and the amount of Al ions is 32 mass ppt, as shown in the table As shown in 1 [Part 1] <5>, the proportion of 0.5-17 nm Fe oxide particles is 81 mass %. As shown in Table 1 [Part 1] <6>, the "metal residue on Si" is "A". The same applies to other Examples and Comparative Examples.

從表中所示之結果,確認了只要為本發明的藥液則可得到預定的效果。 尤其,從實施例1~8的比較,確認了氧化鈦粒子的含量與鈦離子的含量之質量比為10 1~10 10之情況下,效果更優異。 又,從實施例9及10,確認了氧化鐵粒子的含量與鐵離子的含量之質量比為10 0~10 12之情況下,效果更優異。 又,從實施例11及12,確認了氧化鋁粒子的含量與鋁離子的含量之質量比為10 0~10 12之情況下,效果更優異。 又,從實施例13及14(34及35、55及56、76及77),確認了鈦離子(或鐵離子、鋁離子)的含量相對於藥液總質量為0.10~100質量ppt之情況下,效果更優異。 又,從實施例16及17(37及38、58及59、79及80),確認了氧化鈦粒子(或氧化鐵粒子、氧化鋁粒子)的含量相對於金屬成分中的鈦成分的含量為5質量%以上且小於99質量%之情況下,效果更優異。 又,從實施例18及19(39及40、60及61、81及82),確認了在氧化鈦粒子(或氧化鐵粒子、氧化鋁粒子)中作為粒徑0.5~17 nm之粒子的比例為60質量%以上且小於98質量%之情況下,效果更優異。 又,從實施例20及21(41及42、62及63、83及84),確認了有機雜質的含量相對於藥液總質量為1000~100000質量ppt之情況下,效果更優異。 From the results shown in the table, it was confirmed that the chemical solution of the present invention can obtain the intended effect. In particular, from the comparison of Examples 1 to 8, it was confirmed that when the mass ratio of the titanium oxide particle content to the titanium ion content is 10 1 to 10 10 , the effect is more excellent. Furthermore, from Examples 9 and 10, it was confirmed that when the mass ratio of the content of iron oxide particles to the content of iron ions is 10 0 to 10 12 , the effect is more excellent. Furthermore, from Examples 11 and 12, it was confirmed that when the mass ratio of the content of alumina particles to the content of aluminum ions is 10 0 to 10 12 , the effect is more excellent. Furthermore, from Examples 13 and 14 (34 and 35, 55 and 56, 76 and 77), it was confirmed that the content of titanium ions (or iron ions, aluminum ions) was 0.10 to 100 ppt by mass relative to the total mass of the chemical solution. down, the effect is better. Furthermore, from Examples 16 and 17 (37 and 38, 58 and 59, 79 and 80), it was confirmed that the content of titanium oxide particles (or iron oxide particles, aluminum oxide particles) relative to the content of the titanium component in the metal component is When the content is 5% by mass or more and less than 99% by mass, the effect is even better. Furthermore, from Examples 18 and 19 (39 and 40, 60 and 61, 81 and 82), it was confirmed that the proportion of particles with a particle diameter of 0.5 to 17 nm in titanium oxide particles (or iron oxide particles, aluminum oxide particles) When it is 60 mass % or more and less than 98 mass %, the effect will be more excellent. Furthermore, from Examples 20 and 21 (41 and 42, 62 and 63, 83 and 84), it was confirmed that when the content of organic impurities is 1,000 to 100,000 ppt by mass relative to the total mass of the chemical solution, the effect is more excellent.

使用實施例22的藥液(100L),對容器(EP-SUS)及<純化步驟>中所使用之各種裝置進行了清洗之後,使另外準備之實施例22的藥液流過上述經清洗之裝置,並回收於經清洗之容器,從而在容器中得到了溶液A。 又,使用實施例38的藥液(100L),對容器(EP-SUS)及<純化步驟>中所使用之各種裝置進行了清洗之後,使另外準備之實施例22的藥液流過上述經清洗之裝置,並回收於經清洗之容器,從而在容器中得到了溶液B。 使用溶液A及溶液B,對“Si上的金屬殘渣缺陷”進行了評價之結果,得到了溶液A為更良好的結果。 After cleaning the container (EP-SUS) and various devices used in the <Purification Step> using the chemical solution (100L) of Example 22, the separately prepared chemical solution of Example 22 was allowed to flow through the above-mentioned cleaned device and recovered in the cleaned container, thereby obtaining solution A in the container. In addition, the chemical solution (100L) of Example 38 was used, and after cleaning the container (EP-SUS) and various devices used in the <purification step>, the separately prepared chemical solution of Example 22 was passed through the above process. Clean the device and recover it in the cleaned container, thereby obtaining solution B in the container. Solution A and solution B were used to evaluate "metal residue defects on Si", and solution A was found to be more favorable.

<實施例(EUV曝光)> 首先,將各成分以下述組成進行混合而獲得了光阻組成物1。 •樹脂(A-1):0.77g •光酸產生劑(B-1):0.03g •鹼性化合物(E-3):0.03g •PGMEA(市售品,高純度等級):67.5g •乳酸乙酯(市售品,高純度等級):75g <Example (EUV exposure)> First, each component was mixed with the following composition, and the photoresist composition 1 was obtained. •Resin (A-1): 0.77g •Photoacid generator (B-1): 0.03g •Basic compound (E-3): 0.03g •PGMEA (commercially available, high purity grade): 67.5g •Ethyl lactate (commercially available, high purity grade): 75g

•樹脂(A-1) 作為樹脂(A-1),使用了以下樹脂。 •Resin (A-1) As the resin (A-1), the following resins were used.

[化5] [Chemistry 5]

•光酸產生劑(B-1) 作為光酸產生劑(B-1),使用了以下化合物。 •Photoacid generator (B-1) As the photoacid generator (B-1), the following compounds were used.

[化6] [Chemical 6]

•鹼性化合物(E-3) 作為鹼性化合物(E-3),使用了以下化合物。 •Basic compounds (E-3) As the basic compound (E-3), the following compounds were used.

[化7] [Chemical 7]

(圖案的形成及評價) 首先,將光阻組成物1塗佈於直徑300 mm的矽晶圓上,在100℃下進行烘烤(PB:Prebake)60秒鐘,從而形成了膜厚30 nm的光阻膜。 (Pattern formation and evaluation) First, the photoresist composition 1 is coated on a silicon wafer with a diameter of 300 mm, and baked (PB: Prebake) at 100°C for 60 seconds to form a photoresist film with a film thickness of 30 nm.

對於該光阻膜,使用EUV曝光機(ASML公司製造;NXE3350,NA0.33,Dipole(偶極)90°,外西格瑪0.87,內西格瑪0.35),並隔著反射型遮罩進行了曝光。然後,在85℃下加熱(PEB:Post Exposure Bake)了60秒鐘。接著,藉由噴塗法經30秒鐘噴射顯影液(乙酸丁酯/FETW製造)並進行顯影,藉由旋轉塗佈法經20秒鐘將沖洗液噴射於矽晶圓上並進行了沖洗。接著,使矽晶圓以2000 rpm的轉速旋轉40秒鐘,形成了空間寬度為20 nm且圖案線寬度為15 nm的線與空間的圖案。 作為上述沖洗液,分別使用了上述之實施例44中所使用之藥液。另外,實施了上述之各種評價之結果,得到了與表1相同的傾向的所期望的效果。 This photoresist film was exposed through a reflective mask using an EUV exposure machine (manufactured by ASML; NXE3350, NA0.33, Dipole (dipole) 90°, outer sigma 0.87, inner sigma 0.35). Then, heat (PEB: Post Exposure Bake) at 85°C for 60 seconds. Next, a developer (manufactured by butyl acetate/FETW) was sprayed by the spray coating method for 30 seconds and developed, and a rinse liquid was sprayed on the silicon wafer by the spin coating method for 20 seconds and rinsed. Next, the silicon wafer was rotated at 2000 rpm for 40 seconds to form a line and space pattern with a space width of 20 nm and a pattern line width of 15 nm. As the above-mentioned rinse liquid, the chemical liquid used in the above-mentioned Example 44 was used. In addition, as a result of conducting various evaluations as described above, the desired effects in the same direction as Table 1 were obtained.

Claims (20)

一種圖案形成方法,包括: 光阻膜形成步驟,使用感光化射線性或感放射線性樹脂組成物形成光阻膜; 曝光步驟,對該光阻膜進行曝光;以及 顯影步驟,使用藥液對經曝光的該光阻膜進行顯影, 該藥液含有有機溶劑及金屬成分, 該金屬成分含有氧化鈦粒子及鈦離子, 該氧化鈦粒子的含量與該鈦離子的含量之質量比為10 0~10 12, 該鈦離子的含量相對於該藥液總質量為0.10~100質量ppt, 該氧化鈦粒子的含量相對於該金屬成分中的鈦成分的含量為5質量%以上且小於99質量%。 A pattern forming method, including: a photoresist film forming step, using a photosensitive radioactive or radiation-sensitive resin composition to form a photoresist film; an exposure step, exposing the photoresist film; and a developing step, using a chemical solution to The exposed photoresist film is developed. The chemical solution contains an organic solvent and a metal component. The metal component contains titanium oxide particles and titanium ions. The mass ratio of the content of the titanium oxide particles to the content of the titanium ions is 10 0 to 10 12. The titanium ion content is 0.10 to 100 mass ppt relative to the total mass of the chemical solution, and the titanium oxide particle content is 5 mass% or more and less than 99 mass% relative to the titanium component in the metal component. 一種圖案形成方法,包括: 光阻膜形成步驟,使用感光化射線性或感放射線性樹脂組成物形成光阻膜; 曝光步驟,對該光阻膜進行曝光;以及 顯影步驟,使用藥液對經曝光的該光阻膜進行顯影, 該藥液含有有機溶劑及金屬成分, 該金屬成分含有氧化鈦粒子及鈦離子, 該氧化鈦粒子的含量與該鈦離子的含量之質量比為10 0~10 12, 該鈦離子的含量相對於該藥液總質量為0.10~100質量ppt。 A pattern forming method, including: a photoresist film forming step, using a photosensitive radioactive or radiation-sensitive resin composition to form a photoresist film; an exposure step, exposing the photoresist film; and a developing step, using a chemical solution to The exposed photoresist film is developed. The chemical solution contains an organic solvent and a metal component. The metal component contains titanium oxide particles and titanium ions. The mass ratio of the content of the titanium oxide particles to the content of the titanium ions is 10 0 to 10 12. The content of the titanium ions is 0.10 to 100 ppt by mass relative to the total mass of the chemical solution. 一種圖案形成方法,包括: 光阻膜形成步驟,使用感光化射線性或感放射線性樹脂組成物形成光阻膜; 曝光步驟,對該光阻膜進行曝光;以及 顯影步驟,使用藥液對經曝光的該光阻膜進行顯影, 該藥液含有有機溶劑及金屬成分, 該金屬成分含有氧化鈦粒子及鈦離子, 該氧化鈦粒子的含量與該鈦離子的含量之質量比為10 0~10 12, 該氧化鈦粒子的含量相對於該金屬成分中的鈦成分的含量為5質量%以上且小於99質量%。 A pattern forming method, including: a photoresist film forming step, using a photosensitive radioactive or radiation-sensitive resin composition to form a photoresist film; an exposure step, exposing the photoresist film; and a developing step, using a chemical solution to The exposed photoresist film is developed. The chemical solution contains an organic solvent and a metal component. The metal component contains titanium oxide particles and titanium ions. The mass ratio of the content of the titanium oxide particles to the content of the titanium ions is 10 0 to 10 12. The content of the titanium oxide particles is 5 mass% or more and less than 99 mass% relative to the titanium component in the metal component. 如請求項1至3中任一項所述的圖案形成方法,其中 該曝光步驟中,對該光阻膜進行EUV曝光。 The pattern forming method according to any one of claims 1 to 3, wherein In this exposure step, the photoresist film is exposed to EUV. 如請求項1至3中任一項所述的圖案形成方法,其中 該氧化鈦粒子中,作為粒徑0.5~17 nm之粒子的比例為60質量%以上且小於98質量%。 The pattern forming method according to any one of claims 1 to 3, wherein Among the titanium oxide particles, the proportion of particles having a particle diameter of 0.5 to 17 nm is 60 mass% or more and less than 98 mass%. 如請求項1至3中任一項所述的圖案形成方法,其中 該金屬成分含有鐵離子, 該鐵離子的含量相對於該藥液總質量為0.10~100質量ppt。 The pattern forming method according to any one of claims 1 to 3, wherein This metal component contains iron ions, The content of the iron ions is 0.10 to 100 ppt by mass relative to the total mass of the chemical solution. 如請求項1至3中任一項所述的圖案形成方法,其中 該金屬成分含有氧化鐵粒子, 該氧化鐵粒子的含量相對於該金屬成分中的鐵成分的含量為5質量%以上且小於99質量%。 The pattern forming method according to any one of claims 1 to 3, wherein The metal component contains iron oxide particles, The content of the iron oxide particles is 5% by mass or more and less than 99% by mass relative to the content of the iron component in the metal component. 如請求項1至3中任一項所述的圖案形成方法,其中 該金屬成分含有氧化鐵粒子, 該氧化鐵粒子中,作為粒徑0.5~17 nm之粒子的比例為60質量%以上且小於98質量%。 The pattern forming method according to any one of claims 1 to 3, wherein The metal component contains iron oxide particles, Among the iron oxide particles, the proportion of particles having a particle diameter of 0.5 to 17 nm is 60 mass% or more and less than 98 mass%. 如請求項1至3中任一項所述的圖案形成方法,其中 該金屬成分含有氧化鐵粒子及鐵離子, 該氧化鐵粒子的含量與該鐵離子的含量之質量比為10 0~10 12The pattern forming method according to any one of claims 1 to 3, wherein the metal component contains iron oxide particles and iron ions, and the mass ratio of the content of the iron oxide particles to the content of the iron ions is 10 0 to 10 12 . 如請求項1至3中任一項所述的圖案形成方法,其中 該金屬成分含有鋁離子, 該鋁離子的含量相對於該藥液總質量為0.10~100質量ppt。 The pattern forming method according to any one of claims 1 to 3, wherein This metal component contains aluminum ions, The content of the aluminum ions is 0.10 to 100 ppt by mass relative to the total mass of the chemical solution. 如請求項1至3中任一項所述的圖案形成方法,其中 該金屬成分含有氧化鋁粒子, 該氧化鋁粒子的含量相對於該金屬成分中的鋁成分的含量為5質量%以上且小於99質量%。 The pattern forming method according to any one of claims 1 to 3, wherein The metal component contains aluminum oxide particles, The content of the alumina particles is 5% by mass or more and less than 99% by mass relative to the content of the aluminum component in the metal component. 如請求項1至3中任一項所述的圖案形成方法,其中 該金屬成分含有氧化鋁粒子, 該氧化鋁粒子中,作為粒徑0.5~17 nm之粒子的比例為60質量%以上且小於98質量%。 The pattern forming method according to any one of claims 1 to 3, wherein The metal component contains aluminum oxide particles, Among the alumina particles, the proportion of particles having a particle diameter of 0.5 to 17 nm is 60 mass% or more and less than 98 mass%. 如請求項1至3中任一項所述的圖案形成方法,其中 該金屬成分含有氧化鋁粒子及鋁離子, 該氧化鋁粒子的含量與該鋁離子的含量之質量比為10 0~10 12The pattern forming method according to any one of claims 1 to 3, wherein the metal component contains alumina particles and aluminum ions, and the mass ratio of the content of the alumina particles to the content of the aluminum ions is 10 0 to 10 12 . 如請求項1至3中任一項所述的圖案形成方法,其中 該金屬成分含有氧化銅粒子, 該氧化銅粒子的含量相對於該金屬成分中的銅成分的含量為5質量%以上且小於99質量%。 The pattern forming method according to any one of claims 1 to 3, wherein The metal component contains copper oxide particles, The content of the copper oxide particles is 5% by mass or more and less than 99% by mass relative to the content of the copper component in the metal component. 如請求項1至3中任一項所述的圖案形成方法,其中 該金屬成分含有氧化銅粒子, 該氧化銅粒子中,作為粒徑0.5~17 nm之粒子的比例為60質量%以上且小於98質量%。 The pattern forming method according to any one of claims 1 to 3, wherein The metal component contains copper oxide particles, In the copper oxide particles, the proportion of particles having a particle diameter of 0.5 to 17 nm is 60 mass% or more and less than 98 mass%. 如請求項1至3中任一項所述的圖案形成方法,其中 該金屬成分含有氧化銅粒子及銅離子, 該氧化銅粒子的含量與該銅離子的含量之質量比為10 0~10 12The pattern forming method according to any one of claims 1 to 3, wherein the metal component contains copper oxide particles and copper ions, and the mass ratio of the content of the copper oxide particles to the content of the copper ions is 10 0 to 10 12 . 如請求項1至3中任一項所述的圖案形成方法,其中, 該藥液還含有有機雜質, 該有機雜質的含量相對於該藥液總質量為1000~100000質量ppt。 The pattern forming method according to any one of claims 1 to 3, wherein, The medicinal solution also contains organic impurities, The content of the organic impurities is 1,000 to 100,000 mass ppt relative to the total mass of the chemical liquid. 如請求項1至3中任一項所述的圖案形成方法,其中 相對於該藥液總質量之水的含量為500質量ppb以下。 The pattern forming method according to any one of claims 1 to 3, wherein The water content relative to the total mass of the chemical solution is 500 ppb by mass or less. 如請求項1至3中任一項所述的圖案形成方法,其中 該有機溶劑包含選自包括丙二醇單甲醚乙酸酯、丙二醇單甲醚、環己酮、乳酸乙酯、碳酸丙二酯、異丙醇、4-甲基-2-戊醇、乙酸丁酯、丙二醇單乙醚、丙二醇單丙醚、甲氧基丙酸甲酯、環戊酮、γ-丁內酯、二異戊醚、乙酸異戊酯、二甲基亞碸、N-甲基吡咯啶酮、二乙二醇、乙二醇、二丙二醇、丙二醇、碳酸乙二酯、環丁碸、環庚酮、2-庚酮、丁酸丁酯、異丁酸異丁酯、異戊基醚及十一烷之群組中之1種以上。 The pattern forming method according to any one of claims 1 to 3, wherein The organic solvent contains propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether, cyclohexanone, ethyl lactate, propylene carbonate, isopropyl alcohol, 4-methyl-2-pentanol, butyl acetate. , Propylene glycol monoethyl ether, propylene glycol monopropyl ether, methyl methoxypropionate, cyclopentanone, γ-butyrolactone, diisoamyl ether, isopentyl acetate, dimethyl styrene, N-methylpyrrolidine Ketone, diethylene glycol, ethylene glycol, dipropylene glycol, propylene glycol, ethylene carbonate, cyclobutanone, cycloheptanone, 2-heptanone, butyl butyrate, isobutyl isobutyrate, isoamyl ether And one or more species from the group of undecane. 一種半導體元件的製造方法,其含有如請求項1至19中任一項所述的圖案形成方法。A method of manufacturing a semiconductor element, including the pattern forming method according to any one of claims 1 to 19.
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