TW202345516A - A light controlled current amplifying circuit with noise reduction function - Google Patents

Abstract

The present invention provides a light controlled current amplifying circuit with noise reduction function, comprising: a first FET transistor, a light receiving unit, a functional unit and a second FET transistor. The light receiving unit is connected to a first gate terminal of the first FET transistor. The functional unit and the second FET transistor are connected in parallel with a current output terminal of the first FET transistor. The startup current through the first FET transistor forms a first branch current through the second FET transistor and a second branch current through the functional unit, and the second branch current is used to drive the functional unit.

Description

Light-controlled current amplifier circuit with noise reduction function

The present invention relates to a current amplification circuit, and in particular, to a light-controlled current amplification circuit that uses the current generated by a light sensing element to control circuit elements.

Most of the early microwave amplification components used vacuum tubes as amplification components. Vacuum tubes have a large gain-bandwidth (GBW) product and a large output power. However, due to their large size and short service life, vacuum tubes are prone to high heat and high power consumption, making them unsuitable for use in today's increasingly thin and micro portable electronic devices.

With the advancement of semiconductor manufacturing processes, transistors have gradually become components for microwave amplification. However, transistors often have the problem that the gain bandwidth ratio is too small. Taking the most commonly used BJT transistor as an example, it can only achieve a current amplification effect of about 100 times.

Here, how to provide a current amplification circuit with a good gain bandwidth ratio and allow the configured functional units to operate or detect current data more accurately is a technical issue to be solved by the present invention.

The main purpose of the present invention is to provide a current amplification circuit with good gain bandwidth magnification, which is a light-controlled current amplification circuit that uses the weak current generated by the light sensing element to control the circuit element, and can use current distribution to filter out Noise after current amplification.

In order to achieve the aforementioned purpose, the present invention provides a light-controlled current amplifier circuit with noise reduction function, including: The first FET transistor includes: a first terminal, a first gate terminal and a second terminal; The light receiving unit is connected to the first gate terminal through the first starting line. The light receiving unit generates a first photocurrent by absorbing light. The first photocurrent is transmitted to the first gate terminal through the first starting line to turn on or increase the voltage. The conductive channel at the first gate end allows the starting current to pass through the first end and the second end; Functional units, including: third end and fourth end; and The second FET transistor includes: a fifth terminal, a second gate terminal and a sixth terminal; Among them, the third terminal and the fifth terminal are connected in parallel to the second terminal. After the starting current passes through the first FET transistor, a first current passes through the second FET transistor and a second current passes through the functional unit. The second current Used to drive functional units.

In the above preferred embodiment, the first FET transistor is an enhancement mode FET transistor, and the first photocurrent is transmitted to the first gate terminal through the startup line to increase the startup voltage of the first gate terminal to turn on the first gate terminal. conductive channel.

In the above preferred embodiment, the first gate terminal can gradually accumulate the charge of the startup voltage to a limit value during the startup time, and then gradually release the charge of the startup voltage during the turn-off time.

In the above preferred embodiment, the first FET transistor is a depletion type FET transistor, and the first photocurrent is transmitted to the first gate terminal through the startup line to increase the startup voltage of the first gate terminal to increase the first gate voltage. Extremely conductive channels.

In the above preferred embodiment, the first gate terminal can gradually accumulate the charge of the startup voltage to a limit value during the expansion time, and then gradually release the charge of the startup voltage during the reduction time.

In the above preferred embodiment, the second gate terminal is connected to the light receiving unit through the second activation line, the light receiving unit generates a second photocurrent by absorbing light, and the second photocurrent is transmitted to the second through the second activation line. gate extreme.

In the above preferred embodiment, the second FET transistor is an enhancement mode FET transistor, and the second photocurrent is used to open the conductive channel of the second gate terminal to adjust the first current passing through the fifth terminal and the sixth terminal.

In the above preferred embodiment, the second FET transistor is a depletion-type FET transistor, and the second photocurrent is used to increase the conductive channel of the second gate terminal to adjust the first current passing through the fifth terminal and the sixth terminal. .

In the above preferred embodiment, the second starting circuit has a resistor.

In the above preferred embodiment, the second gate terminal is connected to the regulating signal source through the second starting line. The regulating signal source is used to generate the regulating current, and the regulating current is transmitted to the second gate terminal through the second starting line.

In the above preferred embodiment, the second FET transistor is an enhancement mode FET transistor, and the current is adjusted to open or close the conductive channel at the second gate terminal to adjust the first current passing through the fifth terminal and the sixth terminal. .

In the above preferred embodiment, the second FET transistor is a depletion type FET transistor, and the adjusting current is used to increase or decrease the conductive channel at the second gate terminal to adjust the first branch through the fifth terminal and the sixth terminal. current.

In the above preferred embodiment, the second starting circuit has a resistor.

In the above preferred embodiment, the functional unit is: a light-emitting unit, a current reading unit or a current temporary storage unit.

In the above preferred embodiment, the second FET transistor is a depletion FET transistor.

The beneficial effect of the present invention is that the light-controlled current amplifier circuit provided has extremely high gain bandwidth magnification. On the other hand, through the setting of the second FET transistor, the over-amplified starting current can be effectively reduced, and noise can be filtered out, allowing the functional unit to operate or detect current data more accurately, making it very It is beneficial to be used in light amplification purposes, such as light signal detection, night vision systems and other fields.

The advantages, features and methods of achieving its objects of the present invention will be readily understood from a more detailed description with reference to the exemplary embodiments and accompanying drawings. This invention may, however, be embodied in different forms and should not be construed as limited to the embodiments set forth herein. On the contrary, the provided embodiments will make the disclosure more thorough and comprehensive and fully convey the scope of the invention to those of ordinary skill in the art.

The light amplification module provided by the present invention is mainly produced by processes related to optoelectronic semiconductors. The relevant processes are technologies known to those skilled in the art, and the details of the processes will not be described again here.

Please refer to Figures 1 and 2. Figure 1 is a cross-sectional view of the optical amplification module provided by the present invention; Figure 2 is a first embodiment of a light-controlled current amplifier circuit with noise reduction function provided by the present invention. schematic diagram. The light amplification module 1 includes: a current amplification element 10 , a light emitting element 20 and a light receiving element 30 . The main substrate 11 of the current amplification element 10 has an opposite first surface 111 and a second surface 112, wherein the first surface 111 has a plurality of first main electrodes 13, a plurality of transistors 12 and a first secondary electrode 14, Each transistor 12 is arranged on one side of each first main electrode 13 and is electrically connected to each first main electrode 13 respectively; the second surface 112 has a plurality of second main electrodes 15 and second secondary electrodes 16, each electrically connected to the first main electrode 13. The transistor 12 is electrically connected to each of the second main electrodes 15 via internal circuits 113, and the transistor 12 internally includes part of the light-controlled current amplification circuit 4 with noise reduction function shown in FIG. 2 .

The light-emitting element 20 has a first light-transmissive sub-electrode 22 and a plurality of functional units 23 corresponding to the first main electrode 13. Each functional unit 23 has a first connection electrode 24. In this embodiment, the first light-transmitting sub-electrode 22 has a layered structure; the functional unit 23 is a light-emitting unit, and the first light-transmitting sub-electrode 22 and the functional unit 23 are respectively formed on the first light-transmitting substrate 21 opposite to each other. of two surfaces. The first connection electrode 24 is formed on an end of each functional unit 23 away from the first transparent substrate 21, and each functional unit 23 is electrically coupled to each first main electrode 13 through the first connection electrode 24; A light-transmissive sub-electrode 22 is electrically coupled to the first sub-electrode 14 through the first wire W1.

The light-receiving element 30 has a second light-transmitting sub-electrode 32 and a plurality of light-receiving units 33 corresponding to the second main electrode 15 . Each light-receiving unit 33 has a second connection electrode 34 . In this embodiment, the second light-transmitting sub-electrode 32 has a layered structure, and the second light-transmitting sub-electrode 32 and each light-receiving unit 33 are respectively formed on two opposite surfaces of the second light-transmitting substrate 31 . The second connection electrode 34 is formed on an end of each light receiving unit 33 away from the second light-transmitting substrate 31 , and each light receiving unit 33 is electrically coupled to each second main electrode 15 through the second connection electrode 34; The second light-transmissive sub-electrode 32 is electrically coupled to the second sub-electrode 16 through the second wire W2.

Continuing to refer to FIG. 1 , the light amplification module 1 can be installed in a night vision device, such as a night vision goggle. In some possible implementations, the light amplification module 1 can be installed on the light receiving element 30 A lens (not shown in the figure) for refracting light is also provided on one side. In addition, the power supply of the aforementioned night vision device can be connected to the main substrate 11 or the first transparent substrate 21 to provide power for the operation of the light amplification module 1 .

When ambient light L1 irradiates the light receiving element 30 , the light receiving unit 33 converts the received light into photocurrent and transmits it to the transistor 12 through the second main electrode 15 and the internal wire 113 . After the transistor 12 receives the current signal, it can use the power supplied by the night vision device to drive the built-in functional unit of the transistor 12, and then transmit the amplified starting current to the functional unit 23 through the first main electrode 13, that is, this The light-emitting unit in the embodiment enables the functional unit 23 to emit strong display light L2. The display light L2 emitted by the light-emitting element 20 will form a visible light image corresponding to the ambient light L1, which can be recognized by the user. Although this embodiment only proposes an implementation in which the functional unit 23 is a light-emitting unit, in actual application, the functional unit 23 can also be a current reading unit or a current storage unit, and the implementation proposed in this embodiment is not limit.

Please refer to Figure 1 and Figure 2 together. The light-controlled current amplifier circuit 4 with noise reduction function includes: a first FET transistor 40 , a starting circuit 41 , a guiding circuit 42 , a second FET transistor 43 , a light receiving unit 33 and a functional unit 23 . The first FET transistor 40 includes: a first terminal D ₁ , a first gate terminal G ₁ and a second terminal S ₁ ; the functional unit 23 includes: a third terminal 231 and a fourth terminal 232 ; the second terminal The FET transistor 43 includes: a fifth terminal D ₂ , a second gate terminal G ₂ and a sixth terminal S ₂ , wherein the light receiving unit 33 is connected to the first gate terminal G ₁ via the starting line 41 , and one end of the guiding line 42 Then connect the light receiving unit 33. The first terminal D ₁ of the first FET transistor 40 has a load voltage V _DS , and the third terminal 231 of the functional unit 23 and the fifth terminal D ₂ of the second FET transistor 43 are connected in parallel to the first FET transistor 40 The second end S ₁ .

The light receiving unit 33 can generate a first photocurrent I _p1 by absorbing ambient light L1 (as shown in FIG. 1 ) (the first photocurrent I _p1 can be one of a forward photocurrent or a reverse photocurrent). It should be noted here that forward photocurrent or reverse photocurrent is determined based on the electron migration direction. For example, if the first photocurrent I _p1 is a forward photocurrent, the electron migration direction is determined by the first gate. The terminal G ₁ faces the light receiving unit 33 ; if the first photocurrent I _p1 is a reverse photocurrent, the electron migration direction is from the light receiving unit 33 toward the first gate terminal G ₁ .

The first photocurrent I _p1 can be transmitted to the first gate terminal G ₁ via the activation line 41 to increase the activation voltage of the first gate terminal G ₁ to open or increase the conductive channel of the first gate terminal G ₁ . When the first gate terminal G ₁ opens or increases, the starting current I _DS generated by the load voltage V _DS of the first terminal D ₁ can pass through the first terminal D ₁ and the second terminal S ₁ , and the starting current I _DS It can gradually increase as the conductive channel gradually expands. After the starting current I _DS passes through the first FET transistor 40, it will be distributed to the second FET transistor 43 and the functional unit 23 arranged in parallel, forming a first current I _a passing through the second FET transistor 43 and passing through the functional unit 23. The second current I _b is used to drive _the functional unit 23 .

On the other hand, if you want to close or narrow the conductive channel at the first gate end _G1 , you can use a waveform generator to generate a reverse voltage (not shown in the figure) for switching, and the guide line 42 is relative to the connection light. The other end of the receiving unit 33 forms a pilot voltage V _p to guide and release the charge e of the starting voltage of the first gate terminal G ₁ , thereby reducing the starting voltage of the first gate terminal G ₁ to close or reduce the first gate terminal G 1 . Conductive channel at gate terminal G ₁ .

Please refer to FIG. 3A. FIG. 3A is a voltage and current variation curve diagram of the first embodiment of the first FET transistor of the present invention. In Figure 3A, the bottom horizontal axis represents time in milliseconds (ms); the left vertical axis represents the value of the starting voltage V _g in volts (V); the right vertical axis represents the value of the starting current I _DS in units of Ampere (A). The first FET transistor 40 in this embodiment is an enhancement mode FET transistor. When the first photocurrent I _p1 (shown in FIG. 2 ) is transmitted to the first gate terminal G ₁ , the first gate terminal G ₁ can Within a start-up time T ₁₁ , the charges at the start-up voltage V _g are gradually accumulated to the limit value LV _g1 , and the conductive channel at the first gate terminal G ₁ will open and gradually expand as the start-up voltage V _g increases, so that the start-up current I _DS can pass through the first FET transistor 40 and gradually increase as the startup voltage V _g rises; subsequently, when the pilot voltage V _p (as shown in FIG. 2 ) is formed, it can be within a turn-off time T ₂₁ Gradually release the charge e at the starting voltage _Vg , thereby gradually narrowing and closing the conductive channel at the first gate terminal _G1 , so that the starting current I _DS gradually weakens as the starting voltage _Vg decreases. When the first gate terminal G When the conductive channel of ₁ is completely closed, the starting current I _DS can no longer pass through the first FET transistor 40 .

In this embodiment, when the light receiving unit 33 (as shown in FIG. 2 ) is under the illumination condition of 1.39E-16 W/µm ² (infrared light with a wavelength of 800 nm), the light receiving unit 33 has 0.5 A/W conversion efficiency and a light-receiving area of 225 µm ² , it can output a first photocurrent I _p1 of 1.57E-14 A. On the other hand, the first gate terminal G ₁ has a gate capacitance value of 2.16E-16F (Farad). After setting, the start-up time T ₁₁ is set to 11 ms; the turn-off time T2 is set to 1.5 ms. In this way, the start-up voltage V _g of the first gate terminal G ₁ of the first FET transistor ₄₀ will change from 0 V accumulates to the limit value LV _g1 of 0.8 V, and the startup current I _DS flowing through the first terminal D ₁ and the second terminal S ₁ between the first FET transistor 40 gradually increases. At the instant of starting time T ₁₁ (11 ms), the starting current I _DS has increased to 1.11E-6 A. Compared with the first photocurrent I _p1 output by the light receiving unit 33, the amplification factor of the current is 70700637 times.

After the start-up time T ₁₁ ends, the discharge process of the shutdown time T ₂₁ (1.5 ms) is entered. The starting current I _DS will rapidly decrease to 0 A due to the drop of the starting voltage V _g at the first gate terminal G ₁ . In this way, by repeating the operations of the startup time T ₁₁ and the shutdown time T ₂₁ , the purpose of amplifying the current can be achieved within the tolerable voltage range of the first gate terminal G ₁ of the first FET transistor 40, and one cycle (T ₁₁ and The average current value within T ₁₂ ) is 3.68E-7A, and compared with the first photocurrent I _p1 output by the light receiving unit 33, its magnification is 23439490 times.

Please continue to refer to FIG. 3B . FIG. 3B is a voltage and current variation curve diagram of the second embodiment of the first FET transistor of the present invention. The axis markings in Figure 3B are the same as those in Figure 3A, and in this embodiment, the first FET transistor 40 is a depletion-type FET transistor, and its critical voltage is -0.3 V, so in the initial state when the startup voltage V _g is 0 , there is still a constant starting current I _DS passing through.

When the first photocurrent I _p1 (as shown in Figure 2) is transmitted to the first gate terminal G ₁ , the first gate terminal G ₁ can gradually accumulate the charge of the startup voltage V _g to the limit value LV within an expansion time T _{21 g2} , and the conductive channel at the first gate terminal G ₁ will gradually expand as the starting voltage V _g increases, so that the starting current I _DS gradually increases as the starting voltage V _g rises; subsequently, when the pilot voltage V _p (as shown in Figure 2) is formed, the charge e of the starting voltage V _g can be gradually released within a reduction time T ₂₂ to narrow the conductive channel of the first gate terminal G ₁ , so that the starting current I _DS increases with the starting voltage V The decrease of _g decreases and gradually weakens.

In this embodiment, when the light receiving unit 33 is under the illumination condition of 1.39E-16 W/µm ² (infrared light with a wavelength of 800 nm), the light receiving unit 33 has a conversion efficiency of 0.5 A/W and The light-receiving area of 225 µm ² can output the first photocurrent I _p1 of 1.57E-14 A. On the other hand, the first gate terminal G ₁ has a gate capacitance value of 2.16E-16 F. After setting, the expansion time T ₂₁ is set to 11 ms; the reduction time T ₂₂ is set to 1.5 ms. In this way, the starting voltage V _g of the first gate terminal G ₁ of the first FET transistor 40 will be within the expansion time T ₂₁ It accumulates from 0 V to the limit value LV _g2 of 0.8 V, and gradually increases the start-up current I _DS flowing through the first terminal D1 and the second terminal S1 of the first FET transistor 40 . At the moment of expansion time T ₂₁ (11 ms), the starting current I _DS has increased to 2.09E-6A. After the expansion time T ₂₁ ends, the discharge process of the reduction time T ₂₂ (1.5 ms) is entered. At this time, the starting _{current I DS} will rapidly decrease to 1.55E-7A. In this way, by repeating the operations of the expansion time T ₂₁ and the contraction time T ₂₂ , the purpose of amplifying the current can be achieved within the tolerable voltage range of the first gate terminal G ₁ of the first FET transistor 40 .

Although the embodiments of FIG. 3A and FIG. 3B only propose an implementation in which the starting voltage V _g is a positive voltage, in actual applications, the starting voltage V _g can also be a negative voltage, and the implementation proposed in this embodiment is not the only one. limit.

Please refer to FIG. 3A and FIG. 4A together. FIG. 4A is a graph of current distribution according to an embodiment of the present invention. In this embodiment, the first FET transistor 40 is an enhancement mode FET transistor; the second FET transistor 43 is a depletion mode FET transistor.

It can be seen from the graph that the second gate terminal G ₂ of the second FET transistor 43 can still allow a constant current to pass when no current signal is applied. Therefore, after passing through the first FET transistor 40, the starting current I _DS will preferentially pass through the second FET transistor 43 with a smaller resistance value and form the first current I _a ; when the starting voltage V _g gradually increases, it takes about 2~4 ms. Afterwards, with the increase of the starting current I _DS , after it is greater than the current threshold I _DSL , a second current I _b will be formed through the functional unit 23 , and the second current I _b will be used to drive the functional unit 23 . In this embodiment, the current threshold I _DSL is limited so that the starting current I _DS can form the second current I _b passing through the functional unit 23 after increasing for a period of time. This design allows the light-controlled current amplification circuit 4 with noise reduction function to filter out the starting current I _DS below the current threshold I _DSL , so that it cannot form a second current I _b to drive the functional unit 23, and can filter out Noise function.

Please refer to FIG. 3B and FIG. 4B together. FIG. 4B is a graph of current distribution according to another embodiment of the present invention. In this embodiment, the first FET transistor 40 is a depletion-type FET transistor; the second FET transistor 43 is also a depletion-type FET transistor.

It can be seen from the graph that the first FET transistor 40 can still allow the startup current I _DS to pass during the initial stage when the startup voltage V _g is 0. Similarly, the second gate terminal G ₂ of the second FET transistor 43 can still allow a constant and weak current to pass without applying any current signal. Therefore, the starting current I _DS passes through the first FET transistor 40 After that, the second FET transistor 43 with the smaller resistance value will be given priority to form a constant first current I _a ; when the starting voltage V _g gradually increases, the starting current I _DS will form through the functional unit 23 with the increase. The second current I _b is used to drive _the functional unit 23 . In this embodiment, the current-passing characteristic of the second FET transistor 43 is used to eliminate the startup current I _DS of the first FET transistor 40 when the startup voltage V _g is 0, thereby eliminating the basic background current value. Function.

Please refer to FIG. 5 , which is a schematic diagram of a second embodiment of a light-controlled current amplifier circuit with noise reduction function provided by the present invention. The first FET transistor 40, starting circuit 41, guide circuit 42, second FET transistor 43, light receiving unit 33 and functional unit 23 in the light controlled current amplifier circuit 4a with noise reduction function are the same as those in Figure 2 The same as the first embodiment, and will not be described again here. The only difference is that the light-controlled current amplifier circuit 4a with noise reduction function further includes a second start-up line 44, wherein the second gate terminal _G2 of the second FET transistor 43 is connected through the second start-up line 44 The light receiving unit 33, and the second start line 44 has a resistor 441.

When the light receiving unit 33 generates a first photocurrent I _p1 by absorbing light, it also generates a second photocurrent I _p2 simultaneously, and the second photocurrent I _p2 is then transmitted to the second gate terminal G through the second activation line 44 ₂ to open or increase the conductive channel of the second gate terminal G ₂ to adjust the first current _I a passing through the fifth terminal D ₂ and the sixth terminal S ₂ of the second FET transistor 43 .

Please refer to FIG. 5 , FIG. 3A and FIG. 6A together. FIG. 6A is a graph of current distribution according to another embodiment of the present invention. In this embodiment, the first FET transistor 40 is an enhancement mode FET transistor; the second FET transistor 43 is also an enhancement mode FET transistor, but compared with the first FET transistor 40 , the second FET transistor 43 It has high critical voltage characteristics, so it requires a high gate voltage to turn on.

It can be seen from the curve that the first photocurrent I _p1 is transmitted to the first gate terminal G ₁ through the first starting line 41 to increase the starting voltage V _g of the first gate terminal G ₁ to open and increase the first gate terminal. The conductive channel of G ₁ gradually increases the starting current I _DS . On the other hand, the second photocurrent I _p2 is transmitted to the second gate terminal G ₂ via the second activation line 44 to open and increase the conductive channel of the second gate terminal G ₂ , so that the conductive channel allocated to the second FET transistor 43 The first current I _a can also gradually increase. Since both the starting current I _DS and the first current _I a gradually increase with the accumulation of current signals (I _p1 and I _p2 ), the increasing trend of the second current I _b allocated to the functional unit 23 is compared with The starting current I _DS is gentler, and the amplitude of the increase of the second current I _b passing through the functional unit 23 is more consistent with the proportional relationship corresponding to time. For example, if the functional unit 23 is a light-emitting unit, it increases linearly. When the large second current I _b drives the functional unit 23, the functional unit 23 can more accurately enhance and present the visible light image corresponding to the brightness of the environmental image.

Please refer to FIG. 5 , FIG. 3B and FIG. 6B together. FIG. 6B is a graph of current distribution according to another embodiment of the present invention. In this embodiment, the first FET transistor 40 is a depletion mode FET transistor; the second FET transistor 43 is an enhancement mode FET transistor.

It can be seen from the graph that the first FET transistor 40 can already pass the startup current I _DS in the initial stage when the startup voltage V _g is 0. The first photocurrent I _p1 is transmitted to the first gate terminal G ₁ through the first starting line 41 to increase the starting voltage V _g of the first gate terminal G ₁ to increase the conductive channel of the first gate terminal G ₁ and increase the starting current. I _DS gradually increases. On the other hand, the second photocurrent I _p2 is transmitted to the second gate terminal G ₂ via the second activation line 44 to open and increase the conductive channel of the second gate terminal G ₂ , so that the conductive channel allocated to the second FET transistor 43 The first current I _a also gradually increases. Since both the starting current I _DS and the first current _I a gradually increase with the accumulation of signals (I _p1 and I _p2 ), the second current I _b allocated to the functional unit 23 increases in a gentler trend. This also allows the amplitude of the increase of the second current I _b passing through the functional unit 23 to be more consistent with the proportional relationship corresponding to time.

Although the embodiment of FIG. 6A and FIG. 6B only proposes an implementation in which the second FET transistor 43 is an enhancement mode FET transistor, in actual application, the second FET transistor 43 can also be a depletion mode FET transistor, and The second gate terminal G ₂ can also be connected to the light receiving unit 33 via the second activation line 44 to receive the second photocurrent I _p2 generated by the light receiving unit 33 .

Please refer to FIG. 7 , which is a schematic diagram of a third embodiment of a light-controlled current amplifier circuit with noise reduction function provided by the present invention. The first FET transistor 40, the starting circuit 41, the guiding circuit 42, the second FET transistor 43, the light receiving unit 33 and the functional unit 23 and the second starting circuit in the light-controlled current amplifier circuit 4b with the noise reduction function The line 44 is the same as the second embodiment of FIG. 5 and will not be described again. The only difference is that the light-controlled current amplifier circuit 4b with noise reduction function further includes an adjustment signal source 45, in which the second gate terminal _G2 of the second FET transistor 43 is connected to the adjustment signal through the second start line 44. The signal source 45, and the second start line 44 has a resistor 441.

The adjustment signal source 45 is used to generate the adjustment current I _con , and the adjustment current I _con can be transmitted to the second gate terminal G ₂ through the second start line 44 . If the second FET transistor 43 is an enhancement mode FET transistor, the adjusting current I _con is used to open or close the conductive channel of the second gate terminal G ₂ of the second FET transistor 43 to adjust the conductive channel through the fifth terminal D ₂ and The first current I _a at the sixth terminal S ₂ ; if the second FET transistor 43 is a depletion-type FET transistor, the adjustment current I _con is used to increase or decrease the conductive channel of the second gate terminal G ₂ to adjust The first current I _a passes through the fifth terminal D ₂ and the sixth terminal S ₂ . For example, when the brightness of the ambient light L1 (shown in FIG. 1 ) rises and is determined to exceed the allowable current amplification range of the light control current amplification circuit 4b with noise reduction function, the adjustment signal source 45 can synchronously output dense The adjustment current I _con allows the second FET transistor 43 to distribute more of the first current I _a to reduce the second current I _b distributed to the functional unit 23 so that the functional unit 23 can operate more accurately. Or detect current data.

Compared with the conventional technology, the present invention provides a light-controlled current amplification circuit with a simple circuit composition and extremely high gain bandwidth magnification. On the other hand, through the setting of the second FET transistor, the over-amplified starting current can be effectively reduced, and noise can be filtered out, allowing the functional unit to operate or detect current data more accurately, making it very It is advantageous to be used in light amplification applications, such as light signal detection, night vision systems and other fields; therefore, the present invention is actually a creation of great industrial value.

The present invention may be modified in various ways as desired by those skilled in the art, without departing from the intended protection within the scope of the appended patent application.

D ₁ : first terminal D ₂ : fifth terminal e: charge G ₁ : first gate terminal G ₂ : second gate terminal I _con : adjustment current I _p1 : first photocurrent I _p2 : second photocurrent I _DS : Starting current L1: Ambient light L2: Display light LV _g1 , LV _g2 : Limit value S ₁ : Second terminal S ₂ : Sixth terminal T ₁₁ : Starting time T ₂₁ : Closing time T ₂₁ : Expansion time T ₂₂ : Reduction Time V _DS : Load voltage V _g : Starting voltage V _p : Pilot voltage W1: First wire W2: Second wire 1: Optical amplification module 10: Current amplification element 11: Main substrate 111: First surface 112: No. Two surfaces 113: internal circuit 12: transistor 13: first main electrode 14: first sub-electrode 15: second main electrode 16: second sub-electrode 20: light-emitting element 21: first light-transmitting substrate 22: first transparent Optical sub-electrode 23: functional unit 231: third end 232: fourth end 24: first connection electrode 30: light receiving element 31: second light-transmitting substrate 32: second light-transmitting sub-electrode 33: light receiving unit 34: Second connection electrodes 4, 4a, 4b: light-controlled current amplifier circuit with noise reduction function 40: first FET transistor 41: first start line 42: guide line 43: second FET transistor 44: second start Line 441: Resistor 45: Adjust signal source

Figure 1: is a cross-sectional view of the light amplification module provided by the present invention;

Figure 2 is a schematic diagram of the first embodiment of the light-controlled current amplifier circuit with noise reduction function provided by the present invention;

Figure 3A: is a voltage and current change curve diagram of the first embodiment of the first FET transistor of the present invention;

Figure 3B: is a voltage and current change curve diagram of the second embodiment of the first FET transistor of the present invention;

Figure 4A: is a graph showing an embodiment of current distribution according to the present invention;

Figure 4B: is a graph of another embodiment of current distribution according to the present invention;

Figure 5: is a schematic diagram of the second embodiment of the light-controlled current amplifier circuit with noise reduction function provided by the present invention;

Figure 6A: is a graph showing another embodiment of current distribution according to the present invention;

Figure 6B: is a graph of another embodiment of current distribution according to the present invention; and

Figure 7 is a schematic diagram of a third embodiment of a light-controlled current amplifier circuit with noise reduction function provided by the present invention.

D ₁ : first end

D ₂ : fifth end

e: charge

G ₁ : first gate terminal

G ₂ : Second gate terminal

I _p1 : first photocurrent

I _DS : starting current

S ₁ : Second end

S ₂ : Sixth end

V _DS :Load voltage

V _p : pilot voltage

23: Functional unit

231:Third end

232:Fourth end

33:Light receiving unit

4: Light-controlled current amplification circuit with noise reduction function

40:The first FET transistor

41: First start line

42:Guide line

43: Second FET transistor

Claims (15)

A light-controlled current amplification circuit with noise reduction function, including: A first FET transistor includes: a first terminal, a first gate terminal and a second terminal; A light receiving unit is connected to the first gate terminal through a first starting line. The light receiving unit generates a first photocurrent by absorbing light. The first photocurrent is transmitted to the first through the first starting line. A gate terminal to open or increase the conductive channel of the first gate terminal so that a starting current can pass through the first terminal and the second terminal; A functional unit including: a third end and a fourth end; and a second FET transistor, including: a fifth terminal, a second gate terminal and a sixth terminal; Wherein, the third terminal and the fifth terminal are connected in parallel to the second terminal, and the starting current passes through the first FET transistor to form a first current passing through the second FET transistor and a first current passing through the functional unit. The second current is used to drive the functional unit. As described in item 1 of the patent application, the light-controlled current amplification circuit with noise reduction function, wherein the first FET transistor is an enhancement mode FET transistor, and the first photocurrent is transmitted to the first gate through the activation line. extreme to increase a starting voltage of the first gate terminal to open the conductive channel of the first gate terminal. As described in item 2 of the patent application, the light-controlled current amplifier circuit with noise reduction function, wherein the first gate terminal can gradually accumulate the charge of the startup voltage to a limit value during a startup time, and then can be turned off during a shutdown time. The charge at the starting voltage is gradually released over time. As described in item 1 of the patent application, the light-controlled current amplifier circuit with noise reduction function, wherein the first FET transistor is a depletion-type FET transistor, and the first photocurrent is transmitted to the first gate through the activation line. extreme, to increase a starting voltage of the first gate terminal to increase the conductive path of the first gate terminal. As described in item 4 of the patent application, the light-controlled current amplifier circuit with noise reduction function, wherein the first gate terminal can gradually accumulate the charge of the startup voltage to a limit value during an expansion time, and then can gradually accumulate the charge of the startup voltage to a limit value during a reduction time. The charge at the starting voltage is gradually released over time. As described in item 1 of the patent application, the light-controlled current amplifier circuit with noise reduction function, wherein the second gate terminal is connected to the light-receiving unit through a second activation line, and the light-receiving unit generates a light-receiving unit by absorbing light. A second photocurrent is transmitted to the second gate terminal via the second activation line. As described in item 6 of the patent application, the light-controlled current amplification circuit with noise reduction function, wherein the second FET transistor is an enhancement-mode FET transistor, and the second photocurrent is used to open the conductive channel of the second gate terminal , to adjust the first current passing through the fifth terminal and the sixth terminal. As described in item 6 of the patent application, the light-controlled current amplification circuit with noise reduction function, wherein the second FET transistor is a depletion-type FET transistor, and the second photocurrent is used to increase the conduction of the second gate terminal. channel to adjust the first current passing through the fifth terminal and the sixth terminal. In the light-controlled current amplification circuit with noise reduction function described in item 6 of the patent application, the second starting line has a resistor. As described in item 1 of the patent application, the light-controlled current amplifier circuit with noise reduction function, wherein the second gate terminal is connected to an adjustment signal source through a second start line, and the adjustment signal source is used to generate an adjustment current. , the regulating current is transmitted to the second gate terminal via the second starting line. As described in item 10 of the patent application, the light-controlled current amplification circuit with noise reduction function, wherein the second FET transistor is an enhancement-type FET transistor, and the adjustment current is used to turn on or off the conduction of the second gate terminal. channel to adjust the first current passing through the fifth terminal and the sixth terminal. As described in item 10 of the patent application, the light-controlled current amplifier circuit with noise reduction function, wherein the second FET transistor is a depletion type FET transistor, and the adjustment current is used to increase or decrease the second gate terminal. A conductive channel to regulate the first current passing through the fifth terminal and the sixth terminal. In the light-controlled current amplification circuit with noise reduction function described in item 10 of the patent application, the second starting line has a resistor. As described in item 1 of the patent application, the light-controlled current amplification circuit with noise reduction function is a light-emitting unit, a current reading unit or a current temporary storage unit. In the light-controlled current amplification circuit with noise reduction function described in item 1 of the patent application, the second FET transistor is a depletion-type FET transistor.

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