TW202343973A - Wave device - Google Patents

Abstract

A wave device is provided, which includes a substrate with a top surface and a bottom surface, and a plurality of pads arranged on the periphery of the top surface; at least a electronic component is arranged on the top surface of the electronic device, so the plurality of pads on the periphery of the top surface surrounds the electronic component; a cover structure is arranged over above the substrate with the electronic device thereon, and the cover structure and the substrate forms a closed cavity, so the electronic component is arranged in the closed cavity; a first protection layer is covered on the portion surface of the substrate and on the portion surface of the plurality of pads; a conductive layer is arranged on the portion of first protection layer, the plurality of pads, the outer surface of the cover structure, and the portion top surface of the cover structure; and a plurality of bumps is arranged on the conductive layer which is located on the top surface of the cover structure.

Description

sonic components

The present invention relates to the field of semiconductor technology, and in particular, to an acoustic wave element that can improve frequency response performance.

A surface acoustic wave element (SAW) can excite sound waves by applying power to a comb-shaped electrode of an interdigital transducer (IDT) formed on a substrate. Surface acoustic wave components are widely used in various circuits that process radio signals in a bandwidth of, for example, 45 MHz to 2 GHz. Examples of these circuits are band pass filters for transmission, band pass filters for reception, local side oscillator filters, antenna duplexers, IF filters, and FM modulators (FM, Frequency Modulation).

Surface acoustic wave elements require a cavity located above the functional parts of the acoustic wave element consisting of comb electrodes, such as the electrode fingers of an interdigital transducer, to ensure the performance of the surface acoustic wave element. Conventional surface acoustic wave devices employ a ceramic bond with a groove in which the surface acoustic wave element is mounted to establish an electrical connection between the surface acoustic wave element and interconnects provided on the ceramic package.

However, the use of wires in the wire bonding process hinders the size reduction of surface acoustic wave devices. In order to reduce the size of surface acoustic wave devices, flip-chip bonding was further developed. Because flip-chip bonding does not use wires for mounting, surface acoustic wave device size reduction is achieved.

In recent years, there have been stricter requirements for reducing the size of surface acoustic wave devices. In some cases, even flip-chip bonding cannot achieve the desired size reduction. Therefore, it was proposed that the surface acoustic wave element be arranged on the substrate, and a covering layer be provided on the surface of the substrate to define a cavity above the functional components of the surface acoustic wave element. The covering layer serves as a package. This type of packaging is called a wafer level package (WLP, wafer level package), and this packaging method enables the miniaturization of surface acoustic wave components.

The main purpose of the present invention is to provide an acoustic wave component. A conductor layer is formed on the soldering pad to increase the strength between the bump and the soldering pad, so as to solve the problem that when the acoustic wave component is packaged in a flip-chip manner, the bump will be broken due to stress. The soldering pads are pulled up from the substrate, causing damage to the entire package structure.

Another object of the present invention is to provide an acoustic wave component to increase design feasibility, add power bumps or ground bumps, and improve electrical performance.

According to the above purpose, the present invention discloses an acoustic wave component, which includes: a substrate having an upper surface and a lower surface, with a plurality of soldering pads provided on the periphery of the upper surface; at least one electronic component is disposed on the upper surface of the substrate, so that on the substrate A plurality of soldering pads around the upper surface surround the electronic components; the cover structure is arranged above the substrate with electronic components, and the space between the cover structure and the substrate is defined as a closed cavity, so that the electronic components are placed in In the closed cavity; the first protective layer covers part of the upper surface of the substrate and part of the surfaces of the plurality of soldering pads, and exposes part of the surfaces of the plurality of soldering pads that are not covered by the first protective layer; The conductor layer is provided on part of the surface of the first protective layer, part of the surfaces of the plurality of pads not covered by the first protective layer, the outer surface of the cover structure and part of the upper surface of the cover structure; and a plurality of bumps, on a conductor layer located on the upper surface of the cover structure.

In a preferred embodiment of the present invention, the cover structure includes in order from the substrate upward: a part of the second protective layer covers part of the surface of the plurality of solder pads adjacent to the electronic component, and is disposed on the substrate adjacent to the electronic component. the upper surface of the substrate; a first insulating layer disposed on part of the surface of the second protective layer, and the second protective layer and the first insulating layer do not cover the electronic components on the substrate; and a second insulating layer covering the first insulating layer On part of the surface of the layer, the structure composed of the second protective layer and the first insulating layer is defined as the side wall of the cover structure and the second insulating layer is defined as the top wall of the cover structure.

In a preferred embodiment of the present invention, the cover structure includes in order from the substrate upward: a part of the second protective layer covers part of the surface of the plurality of solder pads adjacent to the electronic component, and part of the second protective layer is disposed adjacent to the upper surface of the substrate of the electronic component; the first insulating layer is disposed on part of the surface of the second protective layer and covers part of the surface of the plurality of soldering pads to expose part of the surface of the plurality of soldering pads that are not covered by the first insulating layer, And the second protective layer and the first insulating layer do not cover the electronic components on the substrate; and the second insulating layer covers part of the surface of the first insulating layer, so that the structure composed of the second protective layer and the first insulating layer The side walls defined as the cover structure and the second insulation layer are defined as the top wall of the cover structure.

According to the above object, the present invention also discloses another acoustic wave component, including: a substrate having an upper surface and a lower surface, with a plurality of soldering pads provided on the periphery of the upper surface; and at least one electronic component disposed on the upper surface of the substrate so that A plurality of soldering pads around the upper surface of the substrate surround the electronic components; the cover structure is arranged above the substrate with the electronic components, and the space between the cover structure and the substrate is defined as a closed cavity, so that the electronic components are placed In the closed cavity; a first protective layer covers part of the upper surface of the substrate and a part of the surface of the plurality of soldering pads; a first insulating layer is provided on part of the surface of the first protective layer and covers a part of the surface of the plurality of soldering pads. The surface of part of the pad is to expose part of the surface of the plurality of welding pads that are not covered by the first protective layer; the conductor layer covers part of the surface of the first insulating layer and is not covered by the first protective layer. A portion of the surface, an outer surface of the cover structure and a portion of the upper surface of the cover structure; and a plurality of bumps disposed on the conductor layer located on the upper surface of the cover structure.

In a preferred embodiment of the present invention, the second insulating layer and the first insulating layer of the cover structure have a stepped structure.

In a preferred embodiment of the present invention, the height of the first insulating layer disposed on part of the surface of the first protective layer and covering the plurality of bonding pads is the same as the height of the first insulating layer of the cover structure.

In a preferred embodiment of the present invention, the conductor layer is composed of an under ball metallurgy (UBM) and a redistribution layer (RDL), where the redistribution layer is disposed on the under ball metallurgy. layer.

In a preferred embodiment of the present invention, the electronic component may be a filter, an oscillator or a sensor.

In a preferred embodiment of the present invention, the bumps may be copper pillar bumps, copper pillars or C4 bumps.

First please refer to Figure 1. FIG. 1 is a schematic cross-sectional view showing an embodiment of an acoustic wave element according to the technology disclosed in the present invention. In FIG. 1 , the acoustic wave element 1 is composed of a substrate 10 , an electronic component 20 , a cover structure 30 a , a first protective layer 40 , a conductor layer 50 a and a plurality of bumps 60 . The substrate 10 has an upper surface 102 and a lower surface 104, and a plurality of bonding pads 106 are provided around the upper surface 102. In one embodiment, the substrate 10 is made of piezoelectric material, such as quartz, lithium tantalate (LT, LiTaO ₃ ), lead titanate (PTO, PbTiO ₃ ) or lead zirconate titanate (PZT, Pb(Zr,Ti)O ₃ ). Bonding pad 106 may be an aluminum pad. The electronic component 20 is disposed on the upper surface 102 of the substrate 10 so that a plurality of bonding pads 106 around the upper surface 102 of the substrate 10 surround the electronic component 20 . In the embodiment of the present invention, the electronic component 20 may be a filter, an oscillator or a sensor.

Please continue to refer to Figure 1. A cover structure 30a is provided above the substrate 10 with the electronic component 20. The space between the cover structure 30a and the substrate 10 can be defined as a closed cavity 32a. Therefore, the electronic component 20 is disposed on the upper surface 102 of the substrate 10. in this closed cavity 32a. The cover structure 30a can prevent moisture in the external environment from entering the closed cavity 32a, thereby increasing the service life of the electronic component 20 and the reliability of the entire acoustic wave component 1 through the cover structure 30a.

In an embodiment of the present invention, the cover structure 30a includes: a second protective layer 302a, a first insulating layer 304a and a second insulating layer 306a in order from the substrate 10 upward, wherein the second protective layer 302a covers adjacent areas Partial surfaces of the plurality of bonding pads 106 of the electronic component 20 and the second protective layer 302 a are disposed on a part of the upper surface 102 of the substrate 10 adjacent to the electronic component 20 . The first insulating layer 304a is disposed on part of the surface of the second protective layer 302a, and the second protective layer 302a and the first insulating layer 304a above the substrate 10 do not cover the electronic components 20 on the substrate 10. The second insulating layer 306a covers part of the surface of the first insulating layer 304a, so that the structure composed of the second protective layer 302a and the first insulating layer 304a can be defined as the side walls of the cover structure 30a and the second insulating layer 306a. It is the top wall of the cover structure 30a. In one embodiment, the second insulating layer 306a and the first insulating layer 304a in the cover structure 30a have a stepped structure.

Please continue to refer to Figure 1 as well. The acoustic wave element 1 also includes a first protective layer 40, which simultaneously covers part of the upper surface 102 of the substrate 10 and part of the surfaces of the plurality of solder pads 106, and exposes other parts of the surfaces of the plurality of solder pads 106, that is, is not exposed. The first protective layer 40 covers part of the surfaces of the plurality of bonding pads 106 . It should be noted that the first protective layer 40 and the cover structure cover part of the upper surface 102 of the substrate 10 and part of the surface of the plurality of soldering pads 106, and expose other parts of the surfaces of the plurality of soldering pads 106. The second protective layer 302a in 30a is formed simultaneously using a semiconductor process. Next, the conductor layer 50a covers part of the surface of the first protective layer 40, part of the surfaces of the plurality of bonding pads 106 that are not covered by the first protective layer 40, and the outer surface 34a of the cover structure 30a and the part of the cover structure 30a. Upper surface 36a. In one embodiment, the conductor layer 50a is composed of an under bump metallurgy (UBM) 502a and a redistribution layer (RDL) 504a, wherein the redistribution layer 504a is disposed in the UBM. on layer 502a. Specifically, the under-bump metal layer 502a serving as the conductor layer 50a covers part of the surface of the first protective layer 40, part of the surfaces of the plurality of bonding pads 106 that are not covered by the first protective layer 40, and parts of the cover structure 30a. The outer surface 34a and part of the upper surface 36a of the cover structure 30a are then disposed on the under-bump metal layer 502a as the redistribution layer 504a as the conductor layer 50a. Finally, a plurality of bumps 60 are disposed on the conductor layer 50a covering the upper surface 36a of the cover structure 30a to complete the acoustic wave device 1. In one embodiment, the bumps 60 may be copper pillar bumps (Copper Pillar Bump). , copper pillars or C4 bumps. In addition, it should be noted that the acoustic wave element 1 in the present invention is formed by using existing semiconductor process technology. The process flow and the materials constituting the acoustic wave element 1 are not included in the technical solution to be discussed in the present invention, so no additional details will be given. statement.

Next, the present invention also discloses another acoustic wave element, as shown in FIG. 2 . FIG. 2 is a schematic cross-sectional view showing another embodiment of an acoustic wave element according to the technology disclosed in the present invention. In FIG. 2 , the acoustic wave element 2 is composed of a substrate 10 , an electronic component 20 , a cover structure 30 b , a first protective layer 40 , a conductor layer 50 b and a plurality of bumps 60 . The substrate 10 has an upper surface 102 and a lower surface 104, and a plurality of bonding pads 106 are provided around the upper surface 102. The materials of the substrate 10 , the bonding pads 106 and the electronic components 20 are the same as those mentioned above and will not be further described. The electronic component 20 is disposed on the upper surface 102 of the substrate 10 so that the plurality of bonding pads 106 at the periphery of the upper surface 102 of the substrate 10 surround the electronic component 20 .

Please continue to refer to Figure 2. A cover structure 30b is provided above the substrate 10 with the electronic component 20. The space between the cover structure 30b and the substrate 10 can be defined as a closed cavity 32b. Therefore, the electronic component 20 is provided on the upper surface 102 of the substrate 10. in this closed cavity 32b. The cover structure 30b can prevent moisture in the external environment from entering the closed cavity 32b, thereby increasing the service life of the electronic component 20 and the reliability of the entire acoustic wave component 2 through the cover structure 30b.

In another embodiment of the present invention, the cover structure 30b sequentially includes: a second protective layer 302b, a first insulating layer 304b and a second insulating layer 306b from the substrate 10 upward, wherein the second protective layer 302b covers adjacent A portion of the surface of the plurality of bonding pads 106 of the electronic component 20 and the second protective layer 302b are disposed on a portion of the upper surface 102 of the substrate 10 adjacent to the electronic component 20 . The first insulating layer 304b is disposed on part of the surface of the second protective layer 302b and covers part of the plurality of bonding pads 106, and the second protective layer 302b and the first insulating layer 304b above the substrate 10 are not covered on the substrate 10. electronic components 20. The second insulating layer 306b covers part of the surface of the first insulating layer 304b, so that the structure composed of the second protective layer 302b and the first insulating layer 304b is defined as the side wall of the cover structure 30b and the second insulating layer 306b. The top wall of the cover structure 30b. Similarly, in one embodiment, the second insulating layer 306b and the first insulating layer 304b in the cover structure 30b have a stepped structure.

Please continue to refer to Figure 2. The acoustic wave element 2 also includes a first protective layer 40, which simultaneously covers part of the upper surface 102 of the substrate 10 and part of the surfaces of the plurality of solder pads 106, and exposes other parts of the surfaces of the plurality of solder pads 106, that is, it is not exposed to the second protective layer 40. A protective layer 40 covers part of the surface of the plurality of bonding pads 106 . It should be noted that the first protective layer 40 and the cover structure cover part of the upper surface 102 of the substrate 10 and part of the surface of the plurality of soldering pads 106, and expose other parts of the surfaces of the plurality of soldering pads 106. The second protective layer 302b in 30b is formed simultaneously using a semiconductor process. Next, the conductor layer 50b covers part of the surface of the first protective layer 40, part of the surfaces of the plurality of bonding pads 106 that are not covered by the first protective layer 40, and the outer surface 34b of the cover structure 30b and the part of the cover structure 30b. Upper surface 36b. In one embodiment, the conductor layer 50b is composed of an under-bump metal layer 502b and a redistribution layer 504b, wherein the redistribution layer 504b is disposed on the under-bump metal layer 502b. Specifically, the under-bump metal layer 502b serving as the conductor layer 50b covers part of the surface of the first protective layer 40, part of the surfaces of the plurality of bonding pads 106 that are not covered by the first protective layer 40, and the cover structure 30b. The outer surface 34b and part of the upper surface 36b of the cover structure 30b are then disposed on the under-bump metal layer 502b as the redistribution layer 504b as the conductor layer 50b. Finally, a plurality of bumps 60 are disposed on the conductor layer 50b covering the upper surface 36b of the cover structure 30b to complete the acoustic wave element 2. In one embodiment, the bumps 60 may be copper pillar bumps, copper pillars or C4 bumps. . In addition, it should be noted that the acoustic wave element 2 in the present invention is formed by using existing semiconductor process technology. The process flow and the materials constituting the acoustic wave element 10 are not included in the technical solution to be discussed in the present invention, so no additional details will be given. statement.

In addition, the present invention discloses an acoustic wave element, as shown in FIG. 3 . 3 is a schematic cross-sectional view showing yet another embodiment of an acoustic wave element according to the technology disclosed in the present invention. In FIG. 3 , the acoustic wave element 2 is composed of a substrate 10 , an electronic component 20 , a cover structure 30 c , a first protective layer 40 , a conductor layer 50 c and a plurality of bumps 60 . The substrate 10 has an upper surface 102 and a lower surface 104, and a plurality of bonding pads 106 are provided around the upper surface 102. The materials of the substrate 10 , the bonding pads 106 and the electronic components 20 are the same as those mentioned above and will not be further described. The electronic component 20 is disposed on the upper surface 102 of the substrate 10 so that the plurality of bonding pads 106 at the periphery of the upper surface 102 of the substrate 10 surround the electronic component 20 .

Please continue to refer to Figure 3. A cover structure 30c is provided above the substrate 10 with the electronic component 20. The space between the cover structure 30c and the substrate 10 can be defined as a closed cavity 32c. Therefore, the electronic component 20 is provided on the upper surface 102 of the substrate 10. in this closed cavity 32c. The cover structure 30c can prevent moisture in the external environment from entering the closed cavity 32c, thereby increasing the service life of the electronic component 20 and the reliability of the entire acoustic wave component 3 through the cover structure 30c.

In another embodiment of the present invention, the cover structure 30c includes: a second protective layer 302c, a first insulating layer 304c and a second insulating layer 306c in order from the substrate 10 upward, wherein the second protective layer 302c covers adjacent A portion of the surface of the plurality of bonding pads 106 of the electronic component 20 and the second protective layer 302c are disposed on a portion of the upper surface 102 of the substrate 10 adjacent to the electronic component 20 . The first insulating layer 304c is disposed on part of the surface of the second protective layer 302c and covers part of the surfaces of the plurality of bonding pads 106, and the second protective layer 302c and the first insulating layer 304c above the substrate 10 are not covered on the substrate 10 electronic components 20. The second insulating layer 306c covers part of the surface of the first insulating layer 304c, so that the structure composed of the second protective layer 302c and the first insulating layer 304c is defined as the side wall of the cover structure 30c and the second insulating layer 306b. The top wall of the cover structure 30c. Similarly, in one embodiment, the second insulating layer 306c and the first insulating layer 304c in the cover structure 30c have a stepped structure.

Please continue to refer to Figure 3. The acoustic wave element 3 also includes a first protective layer 40 that covers part of the upper surface 102 of the substrate 10 and part of the surfaces of the plurality of soldering pads 106, and exposes other parts of the surfaces of the plurality of soldering pads 106. Partial surfaces of the plurality of bonding pads 106 are covered by the first protective layer 40 . It should be noted that the first protective layer 40 and the cover structure cover part of the upper surface 102 of the substrate 10 and part of the surface of the plurality of soldering pads 106, and expose other parts of the surfaces of the plurality of soldering pads 106. The second protective layer 302c in 30c is formed simultaneously using a semiconductor process. Next, the first insulating layer 304c is disposed on part of the surface of the first protective layer 40 and covers part of the surfaces of the plurality of soldering pads 106 to expose part of the surfaces of the plurality of soldering pads 106 that are not covered by the first protective layer 40 . It should be noted that the first insulating layer 304c disposed on part of the surface of the first protective layer 40 and covering part of the surfaces of the plurality of bonding pads 106 is made of the same material as the first insulating layer 304c in the cover structure 30c. Semiconductor processes are formed simultaneously, and both have the same height.

Next, the conductor layer 50c is covered on part of the surface of the first insulating layer 304c, part of the surfaces of the plurality of bonding pads 10 that are not covered by the first protective layer 40, the outer surface 34c of the cover structure 30c and part of the cover structure 30c. Upper surface 36c. In one embodiment, the conductor layer 50c is composed of an under-bump metal layer 502c and a redistribution layer 504c, where the redistribution layer 504c is disposed on the under-bump metal layer 502c. Specifically, the under-bump metal layer 502c of the conductor layer 50c is first formed on part of the surface of the first insulating layer 304c, part of the surface of the plurality of bonding pads 106 not covered by the first protective layer 40, and part of the cover structure 30c. The outer surface 34c and part of the upper surface 36c of the cover structure 30c are then disposed on the redistribution layer 504c of the conductor layer 5c0 on the under-bump metal layer 502c. Finally, a plurality of bumps 60 are disposed on the conductor layer 50c covering the upper surface 36c of the cover structure 30c to complete the acoustic wave element 3. In one embodiment, the bumps 60 can be copper pillar bumps, copper pillars or C4 bump.

To sum up, according to the acoustic wave components 1, 2, and 3 disclosed in the present invention, in the subsequent flip-chip assembly process, the conductor layers 50a, 50b, and 50c are used to add bumps 60 and solder joints during the mold flow process. The strength between the pads 106 is to solve the problem that when the acoustic wave components 1, 2, and 3 are packaged in a flip-chip manner, when the bumps 60 are broken due to stress, the soldering pads 106 will be pulled up from the substrate 10 together, resulting in The entire packaging structure is damaged. In addition, the cover structures 30a and 30b in FIGS. 1 and 2 and the cover structure 30c in FIG. 3 are disposed on part of the surface of the first protective layer 40 and cover part of the surface of the plurality of bonding pads 106 . An insulating layer 304c can block moisture from the external environment from entering the cavities 32a, 32b, and 32c to increase the reliability of the entire acoustic wave components 1, 2, and 3 during operation.

1, 2, 3: Acoustic components 10:Substrate 102: Upper surface 104: Lower surface 106: Solder pad 20:Electronic components 30a, 30b, 30c: Cover structure 302a, 302b, 302c: second protective layer 304a, 304b, 304c: first insulation layer 306a, 306b, 306c: second insulation layer 32a, 32b, 32c: closed cavity 34a, 34b, 34c: outer surface 36a, 36b, 36c: upper surface 40: First protective layer 50a, 50b, 50c: conductor layer 502a, 502b, 502c: Under-bump metal layer 504a, 504b, 504c: rewiring layer 60: Bump

FIG. 1 is a schematic cross-sectional view showing an embodiment of an acoustic wave element according to the technology disclosed in the present invention. FIG. 2 is a schematic cross-sectional view showing another embodiment of an acoustic wave element according to the technology disclosed in the present invention. 3 is a schematic cross-sectional view showing yet another embodiment of an acoustic wave element according to the technology disclosed in the present invention.

1: Sonic components

10:Substrate

102: Upper surface

104: Lower surface

106: Solder pad

20: Electronic components

30a: Cover structure

302a: Second protective layer

304a: First insulation layer

306a: Second insulation layer

32a: closed cavity

34a: Outside surface

36a: Upper surface

40: First protective layer

50a: Conductor layer

502a: Under-bump metal layer

504a:Rewiring layer

60: Bump

Claims (10)

A sonic component including: A substrate having an upper surface and a lower surface, with a plurality of soldering pads provided on a periphery of the upper surface; At least one electronic component is disposed on the upper surface of the substrate such that the soldering pads on the periphery of the upper surface of the substrate surround the electronic component; A cover structure is disposed above the substrate with the electronic component, and a space between the cover structure and the substrate is defined as a closed cavity, so that the electronic component is disposed in the closed cavity ; A first protective layer covering part of the upper surface of the substrate and part of the surfaces of the soldering pads, and exposing part of the surfaces of the soldering pads that are not covered by the first protective layer; A conductor layer covering part of the surface of the first protective layer, part of the surfaces of the soldering pads not covered by the first protective layer, an outer surface of the cover structure and part of the upper surface of the cover structure; as well as A plurality of bumps are provided on the conductor layer located on the upper surface of the cover structure. The acoustic wave element according to claim 1, wherein the cover structure includes in order from the substrate upward: a second protective layer that simultaneously covers part of the surface of the soldering pads adjacent to the electronic component and is disposed on the upper surface of the substrate adjacent to the electronic component; A first insulating layer is disposed on part of the surface of the second protective layer, and the second protective layer and the first insulating layer do not cover the electronic component on the substrate; and A second insulating layer covers part of the surface of the first insulating layer, so that a structure composed of the second protective layer and the first insulating layer is defined as a side wall of the cover structure and the second The insulation layer is a top wall of the cover structure. The acoustic wave element according to claim 1, wherein the cover structure includes in order from the substrate upward: a second protective layer that simultaneously covers part of the surface of the soldering pads adjacent to the electronic component and is disposed on the upper surface of the substrate adjacent to the electronic component; a first insulating layer, disposed on part of the surface of the second protective layer and covering part of the surface of the soldering pads to expose part of the surface of the soldering pads that are not covered by the first insulating layer, and the second protection layer layer and the first insulating layer do not cover the electronic component on the substrate; and A second insulating layer covers part of the surface of the first insulating layer, so that a structure composed of the second protective layer and the first insulating layer is defined as a side wall of the cover structure and the second The insulation layer is a top wall of the cover structure. A sonic component including: A substrate having an upper surface and a lower surface, with a plurality of soldering pads provided on a periphery of the upper surface; At least one electronic component is disposed on the upper surface of the substrate such that the soldering pads on the periphery of the upper surface of the substrate surround the electronic component; A cover structure is disposed above the substrate with the electronic component, and a space between the cover structure and the substrate is defined as a closed cavity, so that the electronic component is disposed in the closed cavity ; a first protective layer covering part of the upper surface of the substrate and part of the surfaces of the soldering pads; a first insulating layer, disposed on part of the surface of the first protective layer and covering part of the surface of the soldering pads to expose part of the surface of the soldering pads that are not covered by the first protective layer; A conductor layer covering part of the surface of the first insulating layer, part of the surfaces of the soldering pads not covered by the first protective layer, an outer surface of the cover structure and part of the upper surface of the cover structure; as well as A plurality of bumps are provided on the conductor layer located on the upper surface of the cover structure. The acoustic wave element according to claim 4, wherein the cover structure includes in order from the substrate upward: a second protective layer that simultaneously covers part of the surface of the solder pads adjacent to the electronic component and is disposed on the upper surface of the substrate adjacent to the electronic component; The first insulating layer is disposed on part of the surface of the second protective layer and covers part of the surface of the soldering pads to expose part of the surface of the soldering pads that are not covered by the first insulating layer, and the second protective layer The second protective layer and the first insulating layer do not cover the electronic component on the substrate, and the second protective layer and the first insulating layer do not cover the electronic component on the substrate; and A second insulating layer covers part of the surface of the first insulating layer, so that a structure composed of the second protective layer and the first insulating layer is defined as a side wall of the cover structure and the second The insulation layer is a top wall of the cover structure. The acoustic wave element according to claim 2, 3 or 5, wherein the second insulating layer and the first insulating layer of the cover structure have a stepped structure. The acoustic wave element according to claim 5, wherein the height of the first insulating layer disposed on part of the surface of the first protective layer and covering part of the soldering pads is consistent with the height of the first part of the cover structure. The height of the insulation layer is the same. The acoustic wave component according to claim 1 or 4, wherein the conductor layer is composed of an under bump metallurgy (UBM) and a redistribution layer (RDL), wherein the redistribution layer is provided on the under-bump metal layer. The acoustic wave component according to claim 1 or 4, wherein the electronic component can be a filter, an oscillator or a sensor. The acoustic wave component according to claim 1 or 4, wherein the bump can be a copper pillar bump, a copper pillar or a C4 bump.

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