TW202338964A - Protective sheet for workpiece processing and method for manufacturing divided workpiece capable of reducing TTV of the workpiece after back grinding - Google Patents

Protective sheet for workpiece processing and method for manufacturing divided workpiece capable of reducing TTV of the workpiece after back grinding Download PDF

Info

Publication number
TW202338964A
TW202338964A TW112111480A TW112111480A TW202338964A TW 202338964 A TW202338964 A TW 202338964A TW 112111480 A TW112111480 A TW 112111480A TW 112111480 A TW112111480 A TW 112111480A TW 202338964 A TW202338964 A TW 202338964A
Authority
TW
Taiwan
Prior art keywords
workpiece
protective sheet
workpiece processing
layer
wafer
Prior art date
Application number
TW112111480A
Other languages
Chinese (zh)
Inventor
田村和幸
Original Assignee
日商琳得科股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商琳得科股份有限公司 filed Critical 日商琳得科股份有限公司
Publication of TW202338964A publication Critical patent/TW202338964A/en

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00Adhesives in the form of films or foils
    • C09J7/20Adhesives in the form of films or foils characterised by their carriers
    • C09J7/29Laminated material
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/34Accessories
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/10Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/02Physical, chemical or physicochemical properties
    • B32B7/022Mechanical properties
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00Adhesives in the form of films or foils
    • C09J7/30Adhesives in the form of films or foils characterised by the adhesive composition
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67132Apparatus for placing on an insulating substrate, e.g. tape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836Wafer tapes, e.g. grinding or dicing support tapes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00Additional features of adhesives in the form of films or foils
    • C09J2301/30Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/312Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00Additional features of adhesives in the form of films or foils
    • C09J2301/40Additional features of adhesives in the form of films or foils characterized by the presence of essential components
    • C09J2301/416Additional features of adhesives in the form of films or foils characterized by the presence of essential components use of irradiation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Dicing (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
  • Laminated Bodies (AREA)
  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)

Abstract

The present invention provides a protective sheet for workpiece processing capable of reducing TTV of the workpiece after back grinding. The protective sheet for workpiece processing has a support material and an adhesive layer arranged on a main surface of the support material. The other main surface of the support material forms the outermost surface of the protective sheet for workpiece processing. The dynamic friction coefficient between the outermost surface of the protective sheet for workpiece processing and 1200-grit sandpaper is 1.40 or less, and the tensile fracture stress of the supporting material is 250 MPa or less.

Description

工件加工用保護片和工件個片化物的製造方法Method for manufacturing protective sheet for workpiece processing and individualized workpieces

本發明涉及工件加工用保護片和工件個片化物的製造方法。特別是,本發明涉及能夠減小工件在背面研磨(back-grinding)後的TTV的工件加工用保護片以及使用該工件加工用保護片的工件個片化物的製造方法。The present invention relates to a protective sheet for workpiece processing and a method for manufacturing individual workpiece pieces. In particular, the present invention relates to a protective sheet for workpiece processing that can reduce the TTV of a workpiece after back-grinding, and a method of manufacturing a pieced workpiece using the protective sheet for workpiece processing.

半導體晶片等形成有電路的晶片是藉由對形成有多個電路的晶圓等工件進行個片化而以工件個片化物的形式得到的。隨著搭載這種晶片的電子設備的小型化和多功能化的快速發展,晶片也被要求小型化、低高度化、高密度化。為了使晶片變得小型化和低高度化,通常在工件的表面形成電路後,研磨工件的背面,從而使晶片的厚度變薄。A wafer on which a circuit is formed, such as a semiconductor wafer, is obtained by dicing a workpiece such as a wafer on which a plurality of circuits are formed, and is obtained in the form of a pieced workpiece. With the rapid development of miniaturization and multi-functionality of electronic devices equipped with such chips, chips are also required to be miniaturized, low-profile, and high-density. In order to make the wafer smaller and lower in height, usually after a circuit is formed on the surface of the workpiece, the backside of the workpiece is ground to make the wafer thinner.

在進行工件的背面研磨時,為了暫時保護工件表面的電路且保持工件,在工件表面貼附被稱為背磨膠帶的保護片。When back-grinding a workpiece, a protective sheet called a back-grinding tape is attached to the surface of the workpiece in order to temporarily protect the circuit on the surface of the workpiece and to hold the workpiece in place.

工件的表面上形成有用於保護電路的保護膜、用於將晶片和基板上的電極電連接的凸點電極(bump electrode)等的凸狀電極等,從而在工件的表面產生高低差。The surface of the workpiece is formed with a protective film for protecting the circuit, a bump electrode for electrically connecting the wafer and the electrode on the substrate, and other protruding electrodes, thereby creating a level difference on the surface of the workpiece.

由於貼附於工件的表面的保護片遵循工件的表面的形狀,因此保護片也反映出這種高低差。若在產生高低差的狀態下進行工件的背面研磨,則在研磨時施加於工件的壓力會在研磨面上變得不均勻,進而導致研磨後的工件的厚度變得不均勻。Since the protective sheet attached to the surface of the workpiece follows the shape of the surface of the workpiece, the protective sheet also reflects this height difference. If the back surface of the workpiece is ground while the level difference is generated, the pressure applied to the workpiece during grinding will become uneven on the grinding surface, resulting in uneven thickness of the polished workpiece.

研磨後的工件的厚度的最大值和研磨後的工件的厚度的最小值之差被稱為總厚度變化(Total Thickness Variation,TTV),其被視為研磨後的工件的厚度精度的標準。在研磨後的工件的厚度不均勻的情況下,存在TTV變大、在工件上容易產生裂紋,從而在進行工件的個片化時產生不良情況等問題。The difference between the maximum value of the thickness of the ground workpiece and the minimum value of the thickness of the ground workpiece is called the total thickness variation (TTV), which is regarded as a standard for the thickness accuracy of the ground workpiece. When the thickness of the polished workpiece is uneven, there are problems such as the TTV becoming larger, cracks easily occurring in the workpiece, and problems occurring when the workpiece is separated into individual pieces.

對於這種問題,專利文獻1和2中記載了在半導體晶圓的表面貼附黏著片後,研磨該黏著片的最表面,然後進行半導體晶圓的背面研磨,藉此研磨後的半導體晶圓的厚度精度因此變得良好。 [現有技術文獻] [專利文獻] Regarding this problem, Patent Documents 1 and 2 describe that after attaching an adhesive sheet to the surface of a semiconductor wafer, polishing the outermost surface of the adhesive sheet, and then polishing the back surface of the semiconductor wafer, the polished semiconductor wafer The thickness accuracy therefore becomes good. [Prior art documents] [Patent Document]

[專利文獻1]:日本專利第4261260號公報 [專利文獻2]:日本特開2014-175334號公報 [Patent Document 1]: Japanese Patent No. 4261260 [Patent Document 2]: Japanese Patent Application Publication No. 2014-175334

[本發明要解決的技術問題][Technical problem to be solved by this invention]

在專利文獻1和2中,將進行半導體晶圓的背面研磨前要研磨的黏著片的最表面的拉伸彈性模量設定在規定範圍內。In Patent Documents 1 and 2, the tensile elastic modulus of the outermost surface of an adhesive sheet to be polished before back polishing of a semiconductor wafer is set within a predetermined range.

然而,本申請的發明人發現,工件的TTV並非取決於貼附於工件的保護片的最表面的拉伸彈性模量,而是取決於其他參數。即,本申請的發明人發現,與保護片的最表面的拉伸彈性模量相比,待研磨的最表面的動摩擦係數和拉伸斷裂應力更會影響工件的TTV。However, the inventor of the present application found that the TTV of a workpiece does not depend on the tensile elastic modulus of the outermost surface of the protective sheet attached to the workpiece, but depends on other parameters. That is, the inventors of the present application found that the kinetic friction coefficient and tensile fracture stress of the outermost surface to be ground affect the TTV of the workpiece more than the tensile elastic modulus of the outermost surface of the protective sheet.

本發明是鑒於這種實際情況完成的,其目的在於,提供一種能夠減小工件在背面研磨後的TTV的工件加工用保護片。此外,其目的在於,提供一種使用該工件加工用保護片,製造出將工件個片化而得到的工件個片化物的方法。 [解決技術問題的技術手段] The present invention was made in view of this actual situation, and an object thereof is to provide a workpiece processing protective sheet that can reduce the TTV of the workpiece after back-grinding. Furthermore, the object is to provide a method of manufacturing a workpiece into individual pieces by using the protective sheet for workpiece processing. [Technical means to solve technical problems]

本發明的方案如下所示。The scheme of the present invention is as follows.

(1) 一種工件加工用保護片,其具有支撐材料和配置於支撐材料的一個主面上的黏著劑層,其中, 支撐材料的另一個主面構成工件加工用保護片的最表面,工件加工用保護片的最表面與目數為1200目的砂紙的動摩擦係數為1.40以下, 支撐材料的拉伸斷裂應力為250MPa以下。 (1) A protective sheet for workpiece processing, which has a support material and an adhesive layer arranged on one main surface of the support material, wherein, The other main surface of the support material constitutes the outermost surface of the protective sheet for workpiece processing. The dynamic friction coefficient between the outermost surface of the protective sheet for workpiece processing and the 1200-grit sandpaper is 1.40 or less. The tensile fracture stress of the support material is below 250MPa.

(2) 根據(1)所述的工件加工用保護片,其中,支撐材料由兩層以上構成。(2) The protective sheet for workpiece processing according to (1), wherein the support material is composed of two or more layers.

(3) 根據(2)所述的工件加工用保護片,其中,支撐材料具有剛性層和比剛性層更軟的軟質層,軟質層的一個主面構成工件加工用保護片的最表面。(3) The protective sheet for workpiece processing according to (2), wherein the support material has a rigid layer and a soft layer softer than the rigid layer, and one main surface of the soft layer constitutes the outermost surface of the protective sheet for workpiece processing.

(4) 根據(1)至(3)中任一項所述的工件加工用保護片,其中,所述工件加工用保護片以在研磨具有表面和背面的工件的背面的步驟前,工件的表面與黏著劑層貼合,且工件加工用保護片的最表面被研磨的方式進行使用。(4) The protective sheet for workpiece processing according to any one of (1) to (3), wherein the protective sheet for workpiece processing is based on the step of grinding the back surface of the workpiece having a front surface and a back surface. The surface is bonded to the adhesive layer and the outermost surface of the workpiece processing protective sheet is ground.

(5) 根據(4)所述的工件加工用保護片,其中,將所述工件加工用保護片使用於:對在工件的表面形成有溝槽或在工件的內部形成有改質區域的工件的背面進行研磨,從而將工件個片化為工件個片化物的步驟。(5) The protective sheet for workpiece processing according to (4), which is used for a workpiece in which a groove is formed on the surface of the workpiece or a modified region is formed in the interior of the workpiece. The step of grinding the back side of the workpiece into individual workpiece pieces.

(6) 根據(1)至(5)中任一項所述的工件加工用保護片,其中,黏著劑層為能量射線固化性。(6) The protective sheet for workpiece processing according to any one of (1) to (5), wherein the adhesive layer is energy ray curable.

(7) 一種工件個片化物的製造方法,其具有: 將(1)至(6)中任一項所述的工件加工用保護片的黏著劑層與具有表面和背面的工件的表面貼合的步驟; 研磨工件的背面的步驟;以及 對工件進行個片化,從而得到多個工件個片化物的步驟。 (7) A method for manufacturing workpiece fragments, which has: The step of bonding the adhesive layer of the workpiece processing protective sheet described in any one of (1) to (6) to the surface of the workpiece having a front surface and a back surface; The step of grinding the back side of the workpiece; and The step of dicing a workpiece to obtain multiple pieces of the workpiece.

(8) 根據(7)所述的工件個片化物的製造方法,其還具有:針對(4)或(5)所述的工件加工用保護片,研磨工件加工用保護片的最表面的步驟, 研磨工件的背面的步驟在研磨工件加工用保護片的最表面的步驟後進行。 (8) The method for manufacturing a pieced workpiece according to (7), further comprising: polishing the outermost surface of the workpiece processing protective sheet according to (4) or (5). , The step of grinding the back surface of the workpiece is performed after the step of grinding the outermost surface of the protective sheet for workpiece processing.

(9) 根據(7)或(8)所述的工件個片化物的製造方法,其還具有:在工件的表面形成溝槽的步驟、或從工件的表面或背面在工件的內部形成改質區域的步驟, 在研磨工件的背面的步驟中,以溝槽或改質區域為起點而個片化為多個工件個片化物。 (9) The method for manufacturing a pieced workpiece according to (7) or (8), which further includes the step of forming a groove on the surface of the workpiece, or forming a modification inside the workpiece from the surface or back of the workpiece. regional steps, In the step of grinding the back surface of the workpiece, the workpiece is flaked into a plurality of workpiece flakes starting from the groove or the modified area.

(10) 根據(7)至(9)中任一項所述的工件個片化物的製造方法,其還具有:從工件個片化物上剝離工件加工用保護片的步驟 [發明效果] (10) The method for manufacturing a pieced workpiece according to any one of (7) to (9), further comprising: peeling off a protective sheet for workpiece processing from the pieced workpiece. [Effects of the invention]

根據本發明,能夠提供一種減小工件在背面研磨後的TTV的工件加工用保護片。此外,根據本發明,能夠提供一種使用該工件加工用保護片,製造出將工件個片化而得到的工件個片化物的方法。According to the present invention, it is possible to provide a workpiece processing protective sheet that reduces the TTV of the workpiece after back-grinding. Furthermore, according to the present invention, it is possible to provide a method of manufacturing a workpiece into individual pieces by using the protective sheet for workpiece processing.

以下,根據具體的實施方案並利用附圖對本發明進行詳細說明。首先,對本說明書中使用的主要術語進行說明。Hereinafter, the present invention will be described in detail based on specific embodiments and using the drawings. First, the main terms used in this manual will be explained.

工件是指貼附本實施方案的工件加工用保護片後,被個片化的板狀體。作為工件,可列舉出圓形(其中,包括具有定向平面的情況)的晶圓、實施了矩形面板級封裝和模製樹脂密封的條狀物(長方形基板)等,其中,從容易得到上述效果的角度出發,較佳晶圓。晶圓例如可以是矽晶圓、砷化鎵晶圓、碳化矽晶圓、氮化鎵晶圓、磷化銦晶圓等半導體晶圓;玻璃晶圓、鉭酸鋰晶圓、鈮酸鋰晶圓等絕緣體晶圓,此外,也可以是扇出封裝等的製作中使用的由樹脂和半導體構成的重組晶圓。從容易得到上述效果的角度出發,作為晶圓,較佳半導體晶圓或絕緣體晶圓,更佳半導體晶圓。The workpiece refers to a plate-shaped body that is individually divided after the protective sheet for workpiece processing of this embodiment is attached. Examples of workpieces include circular wafers (including those with orientation planes), strips (rectangular substrates) on which rectangular panel-level packaging and molded resin sealing are implemented, and the like. Among them, the above effects are easily obtained. Starting from the perspective, the best wafer. The wafer may be, for example, a silicon wafer, a gallium arsenide wafer, a silicon carbide wafer, a gallium nitride wafer, an indium phosphide wafer and other semiconductor wafers; a glass wafer, a lithium tantalate wafer, or a lithium niobate wafer. It may be an insulator wafer such as a round, or a reconstituted wafer composed of resin and semiconductor used in the production of fan-out packages and the like. From the viewpoint of easily obtaining the above effects, the wafer is preferably a semiconductor wafer or an insulator wafer, and a semiconductor wafer is more preferred.

工件的個片化是指將工件按照電路進行分割從而得到工件個片化物。例如,在工件為晶圓的情況下,工件個片化物為晶片,在工件為實施了面板級封裝或模製樹脂密封的條狀物(長方形基板)的情況下,工件個片化物為半導體封裝。The individualization of workpieces refers to dividing the workpieces according to circuits to obtain individual workpieces. For example, when the workpiece is a wafer, the individualized workpiece is a wafer, and when the workpiece is a strip (rectangular substrate) that has been subjected to panel level packaging or molded resin sealing, the individualized workpiece is a semiconductor package. .

工件的「表面」是指形成有電路、電極等的面,工件的「背面」是指沒有形成電路等的面。電極可以是凸點(bump)等的凸狀電極。The "surface" of the workpiece refers to the surface on which circuits, electrodes, etc. are formed, and the "backside" of the workpiece refers to the surface on which circuits, etc. are not formed. The electrode may be a bump-shaped electrode such as a bump.

DBG是指在工件的表面側形成規定深度的溝槽後,從工件背面側進行研磨,藉由研磨來使工件個片化的方法。形成於工件的表面側的溝槽是藉由刀片切割、雷射切割、電漿切割等方法形成的。DBG refers to a method in which a groove of a predetermined depth is formed on the surface side of the workpiece, then ground from the back side of the workpiece, and the workpiece is cut into individual pieces by grinding. The grooves formed on the surface side of the workpiece are formed by blade cutting, laser cutting, plasma cutting, etc.

此外,LDBG是DBG的變形例,是指藉由雷射在工件(例如晶圓)內部設置脆弱的改質區域,藉由工件背面研磨時的應力等進行以使改質區域為起點的龜裂進展來進行工件的個片化的方法。In addition, LDBG is a modification of DBG, which uses laser to set up a fragile modified area inside the workpiece (such as a wafer), and cracks starting from the modified area are caused by the stress during back grinding of the workpiece. Develop a method for individualizing workpieces.

「工件個片化物組」是指在工件的個片化後,保持在本實施方案的工件加工用保護片上的多個工件個片化物。作為整體,這些工件個片化物構成與工件的形狀相同的形狀。此外,「晶片組」是指在作為工件的晶圓的個片化後,保持在本實施方案的工件加工用保護片上的多個晶片。作為整體,這些晶片構成與晶圓的形狀相同的形狀。The "workpiece individualized object group" refers to a plurality of workpiece individualized objects held on the workpiece processing protective sheet of this embodiment after the workpiece is fragmented. As a whole, these workpiece fragments form the same shape as the workpiece. In addition, the "wafer set" refers to a plurality of wafers held on the workpiece processing protective sheet of this embodiment after the wafers as workpieces are separated into pieces. As a whole, these wafers form the same shape as the wafer.

將「(甲基)丙烯酸酯」用作表示「丙烯酸酯」和「甲基丙烯酸酯」這兩者的術語,其他類似術語也相同。"(Meth)acrylate" is used as a term representing both "acrylate" and "methacrylate", and the same applies to other similar terms.

「能量射線」是指紫外線、電子束等,較佳為紫外線。"Energy ray" refers to ultraviolet rays, electron beams, etc., preferably ultraviolet rays.

除非另有說明,否則「重均分子量」是藉由凝膠滲透色譜(GPC)法測定的聚苯乙烯換算值。基於這種方法的測定以如下方式進行:例如,使用在TOSOH CORPORATION製造的高速GPC裝置「HLC-8120GPC」上,依次連接有高速色譜柱「TSK guard column H XL-H」、「TSK Gel GMH XL」、「TSK Gel G2000 H XL」(以上,均為TOSOH CORPORATION製造)的裝置,在色譜柱溫度:40℃、送液速度:1.0mL/分鐘的條件下,將檢測器設為示差折射率計進行。 Unless otherwise stated, "weight average molecular weight" is a polystyrene-converted value measured by gel permeation chromatography (GPC). Measurement based on this method is performed as follows: For example, a high-speed GPC device "HLC-8120GPC" manufactured by TOSOH CORPORATION is used, and high-speed chromatography columns "TSK guard column H XL -H" and "TSK Gel GMH XL" are connected in this order. ", "TSK Gel G2000 H conduct.

剝離片是可剝離地支撐黏著劑層的片。片並不限定厚度,而是用作包括膜的概念。The release sheet is a sheet that supports the adhesive layer releasably. The sheet does not define the thickness, but is used as a concept including the film.

涉及黏著劑層用組合物等組合物的說明中的質量比是基於有效成分(固體成分)的比率,除非另有說明,溶劑並不計算在內。The mass ratio in the description of compositions such as adhesive layer compositions is based on the ratio of active ingredients (solid content), and solvents are not included unless otherwise stated.

(1. 工件加工用保護片) 工件加工用保護片在加工一面(表面)形成有電路等且另一面(背面)沒有形成電路等的工件時使用。作為工件的加工,例如可例示出工件的背面研磨。藉由研磨工件的背面,能夠實現將工件個片化而得到的工件個片化物的薄型化。 (1. Protective sheet for workpiece processing) The protective sheet for workpiece processing is used when processing a workpiece with circuits etc. formed on one side (surface) and no circuits etc. formed on the other side (back surface). As the processing of the workpiece, for example, backside grinding of the workpiece can be exemplified. By grinding the back surface of the workpiece, the individual workpieces obtained by dicing the workpiece can be made thinner.

工件加工用保護片在進行工件的背面研磨前,貼附於工件的表面。工件的表面可以是露出電路的面,也可以是為了保護電路而形成在電路上的保護層的主面。此外,在電路上可以形成凸點等凸狀電極。因此,由於形成於工件的表面的要素,通常在工件的表面產生高低差。The protective sheet for workpiece processing is attached to the surface of the workpiece before backside grinding. The surface of the workpiece may be the surface on which the circuit is exposed, or it may be the main surface of a protective layer formed on the circuit to protect the circuit. In addition, convex electrodes such as bumps can be formed on the circuit. Therefore, a level difference usually occurs on the surface of the workpiece due to elements formed on the surface of the workpiece.

其結果,這種高低差也反映在貼附於工件的表面的工件加工用保護片上。在貼附於工件後,工件加工用保護片被吸附於卡盤工作臺(chuck table)等研磨用工作臺,工件的背面被研磨,若在工件加工用保護片上產生有高低差,則工件加工用保護片與卡盤工作臺之間形成空隙,在背面研磨時施加的力可能不會均勻地傳遞到工件。其結果,在工件的背面產生研磨充分進行的區域和研磨未充分進行的區域。這種研磨的進行程度的差異會導致研磨後的工件厚度不均。即,由於存在研磨後的工件厚度較厚的區域和研磨後的工件厚度較薄的區域,因此存在研磨後的TTV變大的傾向。As a result, this level difference is also reflected in the workpiece processing protective sheet attached to the surface of the workpiece. After being attached to the workpiece, the protective sheet for workpiece processing is adsorbed to a grinding table such as a chuck table, and the back side of the workpiece is ground. If a height difference occurs on the protective sheet for workpiece processing, the workpiece is processed. By creating a gap between the protective sheet and the chuck table, the force applied during back grinding may not be transmitted evenly to the workpiece. As a result, areas where polishing is sufficiently performed and areas where polishing is insufficient are generated on the back surface of the workpiece. This difference in the degree of grinding will lead to uneven thickness of the workpiece after grinding. That is, since there are areas where the thickness of the polished workpiece is thick and areas where the thickness of the polished workpiece is thin, there is a tendency for the TTV after polishing to become larger.

如上所述,若TTV變大,則存在容易在工件上產生裂紋、進行工件的個片化時產生不良情況等問題。As described above, if the TTV becomes large, cracks may easily occur in the workpiece, and problems may occur when the workpiece is separated into pieces.

如上所述,對於這種問題,已知藉由研磨貼附在工件上的工件加工用保護片的最表面來謀求TTV的改善的方法。在該方法中,將工件加工用保護片的最表面部分的拉伸彈性模量設在規定範圍內。As described above, regarding this problem, a method of improving the TTV by polishing the outermost surface of the workpiece processing protective sheet attached to the workpiece is known. In this method, the tensile elastic modulus of the outermost surface portion of the workpiece processing protective sheet is set within a predetermined range.

然而,本申請的發明人著眼於工件加工用保護片的最表面的動摩擦係數和拉伸斷裂應力,發現藉由將這些參數設為最佳狀態,會對工件的背面研磨帶來良好影響,從而能夠減小工件在背面研磨後的TTV。However, the inventor of the present application focused on the dynamic friction coefficient and tensile fracture stress of the outermost surface of the protective sheet for workpiece processing, and found that by setting these parameters to the optimal state, it would have a good influence on the back grinding of the workpiece, thereby It can reduce the TTV of the workpiece after back grinding.

以下,對本實施方案的工件加工用保護片進行詳細說明。Hereinafter, the protective sheet for workpiece processing of this embodiment will be described in detail.

如圖1A所示,本實施方案的工件加工用保護片1具有支撐材料10和配置於支撐材料10上的黏著劑層20。此外,如圖2所示,工件加工用保護片1的黏著劑層20的主面20a被貼附在工件100(例如晶圓)的表面100a上。As shown in FIG. 1A , the protective sheet 1 for workpiece processing according to this embodiment has a support material 10 and an adhesive layer 20 arranged on the support material 10 . Furthermore, as shown in FIG. 2 , the main surface 20 a of the adhesive layer 20 of the workpiece processing protective sheet 1 is attached to the surface 100 a of the workpiece 100 (for example, a wafer).

對於本實施方案的工件加工用保護片1,在研磨工件100的背面100b前,研磨工件加工用保護片1的支撐材料10的與配置有黏著劑層20的主面10a為相反側的主面10b。因此,主面10b構成工件加工用保護片1的最表面。In the workpiece processing protective sheet 1 of the present embodiment, before grinding the back surface 100 b of the workpiece 100 , the main surface of the supporting material 10 of the workpiece processing protective sheet 1 is ground opposite to the main surface 10 a on which the adhesive layer 20 is arranged. 10b. Therefore, the main surface 10b constitutes the outermost surface of the workpiece processing protective sheet 1.

(1.1. 支撐材料) 支撐材料是支撐黏著劑層的構件,在將工件加工用保護片貼附於工件後,支撐材料是支撐工件的構件。因此,較佳支撐材料具有剛性。在本實施方案中,支撐材料具有以下物性。 (1.1. Support materials) The support material is a member that supports the adhesive layer. After the workpiece processing protective sheet is attached to the workpiece, the support material is a member that supports the workpiece. Therefore, the preferred support material is rigid. In this embodiment, the support material has the following physical properties.

(1.2. 動摩擦係數) 在本實施方案中,構成工件加工用保護片的最表面的支撐材料的主面與目數為1200目的砂紙的動摩擦係數為1.40以下。動摩擦係數是在兩個物體接觸的狀態下相對運動時,在接觸面上沿與運動方向相反的方向作用的動摩擦力的比例係數。若動摩擦係數大,則表示使運動的物體停止的力大。砂紙假定是研磨支撐材料的主面的研磨手段(例如,磨輪),上述動摩擦係數是研磨支撐材料的主面的研磨手段所受的阻力的指標。 (1.2. Dynamic friction coefficient) In this embodiment, the dynamic friction coefficient between the main surface of the support material constituting the outermost surface of the workpiece processing protective sheet and the 1200-grit sandpaper is 1.40 or less. The coefficient of kinetic friction is the proportional coefficient of the kinetic friction force acting on the contact surface in the opposite direction to the direction of motion when two objects move relative to each other in contact. If the coefficient of kinetic friction is large, it means that the force that stops the moving object is large. The sandpaper is assumed to be a grinding means (for example, a grinding wheel) for grinding the main surface of the supporting material, and the dynamic friction coefficient is an index of the resistance to the grinding means for grinding the main surface of the supporting material.

藉由使動摩擦係數在上述範圍內,工件加工用保護片的最表面不會附著在研磨手段上,可適當地進行該最表面的研磨,研磨後的最表面的平滑性得到提高。若在適當進行該最表面的研磨後研磨工件的背面,則也可適當地進行工件的背面研磨,能夠減小研磨後的工件的TTV。特別是,即使在黏著劑層比較柔軟的情況下,也可適當地進行該最表面的研磨。By setting the dynamic friction coefficient within the above range, the outermost surface of the workpiece processing protective sheet does not adhere to the polishing means, and the outermost surface can be appropriately polished, thereby improving the smoothness of the polished outermost surface. If the back surface of the workpiece is polished after appropriately performing the polishing of the outermost surface, the back surface of the workpiece can also be appropriately polished, and the TTV of the polished workpiece can be reduced. In particular, even when the adhesive layer is relatively soft, the outermost surface can be polished appropriately.

上述動摩擦係數較佳為1.38以下,更佳為1.35以下,進一步較佳為1.30以下。此外,從能夠用磨輪進行研磨的角度出發,上述動摩擦係數較佳為0.1以上。The dynamic friction coefficient is preferably 1.38 or less, more preferably 1.35 or less, further preferably 1.30 or less. In addition, from the viewpoint of enabling grinding with a grinding wheel, the dynamic friction coefficient is preferably 0.1 or more.

上述動摩擦係數可以藉由公知的方法測定。例如,根據JIS K 7125測定。即,以與JIS K 7125中規定的測定方法相同的方法測定,但測定條件也可以不同。具體的測定方法將在實施例中進行說明。The above-mentioned dynamic friction coefficient can be measured by a known method. For example, measured according to JIS K 7125. That is, the measurement method is the same as the measurement method specified in JIS K 7125, but the measurement conditions may be different. Specific measurement methods will be described in the Examples.

(1.3. 拉伸斷裂應力) 在本實施方案中,支撐材料的拉伸斷裂應力為250MPa以下。拉伸斷裂應力是持續拉伸試樣而使試樣斷裂時的應力。拉伸斷裂應力是表示支撐材料是否容易研磨的指標。 (1.3. Tensile breaking stress) In this embodiment, the tensile fracture stress of the support material is 250 MPa or less. Tensile fracture stress is the stress when the sample is continuously stretched to cause the sample to break. Tensile breaking stress is an indicator of whether a support material is susceptible to grinding.

藉由使拉伸斷裂應力在上述範圍內,工件加工用保護片的最表面易於研磨,可適當地進行該最表面的研磨,研磨後的最表面的平滑性得到提高。若在適當地進行該最表面的研磨後研磨工件的背面,則也可適當地進行工件的背面研磨,能夠減小研磨後的工件的TTV。特別是,即使在黏著劑層比較柔軟的情況下,也可適當地進行該最表面的研磨。By setting the tensile fracture stress within the above range, the outermost surface of the workpiece processing protective sheet can be easily polished, the outermost surface can be appropriately polished, and the smoothness of the polished outermost surface can be improved. If the back surface of the workpiece is polished after the uppermost surface is polished appropriately, the back surface of the workpiece can also be appropriately polished, and the TTV of the polished workpiece can be reduced. In particular, even when the adhesive layer is relatively soft, the outermost surface can be polished appropriately.

另外,如後所述,在支撐材料由兩層以上構成的情況下,上述拉伸斷裂應力是構成工件加工用保護片的最表面的層的拉伸斷裂應力。In addition, as will be described later, when the support material is composed of two or more layers, the above-mentioned tensile rupture stress is the tensile rupture stress of the outermost layer constituting the workpiece processing protective sheet.

上述拉伸斷裂應力較佳為240MPa以下,更佳為230MPa以下。此外,從防止製造時的支撐材料的斷裂的角度出發,上述拉伸斷裂應力較佳為1MPa以上。The tensile breaking stress is preferably 240 MPa or less, more preferably 230 MPa or less. In addition, from the viewpoint of preventing breakage of the supporting material during production, the tensile breaking stress is preferably 1 MPa or more.

上述拉伸斷裂應力可以藉由公知的方法測定。例如,根據JIS K 7161:1994和JIS K 7127:1999測定。即,以與JIS K 7161:1994和JIS K 7127:1999所規定的測定方法相同的方法測定,但測定條件也可以不同。具體的測定方法將在實施例中進行說明。The above tensile breaking stress can be measured by a known method. For example, it is measured based on JIS K 7161:1994 and JIS K 7127:1999. That is, the measurement is performed in the same manner as the measurement method specified in JIS K 7161:1994 and JIS K 7127:1999, but the measurement conditions may be different. Specific measurement methods will be described in the Examples.

(1.4. 支撐材料的結構) 支撐材料的結構不受特別限定,只要支撐材料具有上述物性即可。以下,對支撐材料由一層構成的情況和支撐材料由兩層以上構成的情況進行說明。 (1.4. Structure of supporting materials) The structure of the supporting material is not particularly limited as long as the supporting material has the above physical properties. Hereinafter, a case where the supporting material is composed of one layer and a case where the supporting material is composed of two or more layers will be described.

(1.5. 支撐材料由一層構成的情況) 在支撐材料由一層構成的情況下,支撐材料除了滿足上述物性以外,還需要由在工件的加工中能夠支撐並保持黏著劑層和工件的材料構成。因此,在支撐材料由一層構成的情況下,對於支撐材料,較佳為支撐材料的拉伸斷裂應力在上述範圍內且剛性較高。 (1.5. When the supporting material consists of one layer) When the supporting material is composed of one layer, in addition to satisfying the above-mentioned physical properties, the supporting material needs to be composed of a material that can support and maintain the adhesive layer and the workpiece during processing of the workpiece. Therefore, when the supporting material is composed of one layer, it is preferable that the tensile fracture stress of the supporting material is within the above range and the rigidity is high.

作為支撐材料由一層構成的情況下的支撐材料的材質,例如可例示出聚對苯二甲酸乙二醇酯、聚對苯二甲酸丁二醇酯、聚醯亞胺、聚醯胺、低密度聚乙烯、高密度聚乙烯、雙軸拉伸聚丙烯等。其中,較佳為聚對苯二甲酸乙二醇酯。另一方面,作為支撐材料由一層構成的情況下的支撐材料的材質,不佳為聚萘二甲酸乙二醇酯、聚碳酸酯、乙烯-乙酸乙烯酯共聚物(EVA)、乙烯-甲基丙烯酸共聚物等。另外,上述示例是一般的示例,即使是相同的材料,也可以藉由製造方法滿足上述支撐材料的物性。Examples of the material of the support material when the support material is composed of one layer include polyethylene terephthalate, polybutylene terephthalate, polyimide, polyamide, low-density Polyethylene, high density polyethylene, biaxially stretched polypropylene, etc. Among them, polyethylene terephthalate is preferred. On the other hand, when the supporting material is composed of one layer, the material of the supporting material is preferably polyethylene naphthalate, polycarbonate, ethylene-vinyl acetate copolymer (EVA), ethylene-methyl Acrylic copolymer, etc. In addition, the above-mentioned examples are general examples, and even if they are made of the same material, the physical properties of the above-mentioned supporting material can be satisfied by the manufacturing method.

(1.6. 支撐材料由兩層構成的情況) 在本實施方案中,支撐材料較佳由兩層以上構成。在支撐材料由兩層以上構成的情況下,較佳支撐材料具有剛性層和軟質層。在這種情況下,較佳軟質層的主面構成工件加工用保護片1的最表面。例如,如圖1B所示,支撐材料10由剛性層11和軟質層12構成,軟質層12的主面12b構成工件加工用保護片1的最表面。此外,如圖1C所示,支撐材料10由剛性層11、第一軟質層12及第二軟質層13構成,第一軟質層12的主面12b構成工件加工用保護片1的最表面。 (1.6. When the supporting material is composed of two layers) In this embodiment, the supporting material is preferably composed of two or more layers. When the supporting material is composed of two or more layers, it is preferable that the supporting material has a rigid layer and a soft layer. In this case, it is preferable that the main surface of the soft layer constitutes the outermost surface of the workpiece processing protective sheet 1 . For example, as shown in FIG. 1B , the support material 10 is composed of a rigid layer 11 and a soft layer 12 , and the main surface 12 b of the soft layer 12 constitutes the outermost surface of the workpiece processing protective sheet 1 . In addition, as shown in FIG. 1C , the support material 10 is composed of a rigid layer 11 , a first soft layer 12 and a second soft layer 13 . The main surface 12 b of the first soft layer 12 constitutes the outermost surface of the workpiece processing protective sheet 1 .

(1.6.1. 剛性層) 剛性層是承擔支撐材料的剛性的層,只要由能夠支撐黏著劑層和工件的材料構成則不受限制。例如,可例示出用作背磨膠帶的基材的各種樹脂膜。藉由使用這種樹脂膜,即使工件的厚度因研磨而變薄,也能夠保持工件而不損傷工件。剛性層可以由一個樹脂膜所構成的單層膜構成,也可以由層疊多個樹脂膜而成的多層膜構成。 (1.6.1. Rigid layer) The rigid layer is a layer that bears the rigidity of the supporting material, and is not limited as long as it is made of a material that can support the adhesive layer and the workpiece. For example, various resin films used as the base material of the back-grinding tape can be exemplified. By using this resin film, even if the thickness of the workpiece becomes thin due to polishing, the workpiece can be held without damaging it. The rigid layer may be composed of a single-layer film composed of one resin film, or may be composed of a multi-layered film in which a plurality of resin films are laminated.

在本實施方案中,作為剛性層的材料,例如可列舉出聚對苯二甲酸乙二醇酯、聚萘二甲酸乙二醇酯、聚對苯二甲酸丁二醇酯、全芳香族聚酯等聚酯;聚醯胺、聚碳酸酯、聚縮醛、改質聚苯醚、聚苯硫醚、聚碸、聚醚酮、雙軸拉伸聚丙烯等。其中,較佳為聚酯,更佳為聚對苯二甲酸乙二醇酯。In this embodiment, examples of materials for the rigid layer include polyethylene terephthalate, polyethylene naphthalate, polybutylene terephthalate, and fully aromatic polyester. and other polyesters; polyamide, polycarbonate, polyacetal, modified polyphenylene ether, polyphenylene sulfide, polypropylene, polyetherketone, biaxially stretched polypropylene, etc. Among them, polyester is preferred, and polyethylene terephthalate is more preferred.

剛性層的厚度沒有特別限定,但由於剛性層的厚度會影響工件加工用保護片的剛性,因此根據剛性層的材質進行設定即可。在本實施方案中,剛性層的厚度較佳為10μm以上200μm以下,更佳為15μm以上150μm以下,進一步較佳為20μm以上130μm以下。The thickness of the rigid layer is not particularly limited, but since the thickness of the rigid layer affects the rigidity of the workpiece processing protective sheet, it may be set according to the material of the rigid layer. In this embodiment, the thickness of the rigid layer is preferably from 10 μm to 200 μm, more preferably from 15 μm to 150 μm, and even more preferably from 20 μm to 130 μm.

為了提高與形成在主面上的層的密合性,可對剛性層的至少一個主面實施電暈處理等黏合處理。此外,為了提高與形成在該主面上的層(例如,軟質層)的密合性,可在剛性層的至少一個主面上形成易黏合層。In order to improve the adhesion with the layer formed on the main surface, at least one main surface of the rigid layer may be subjected to an adhesion treatment such as corona treatment. In addition, in order to improve the adhesion with a layer (for example, a soft layer) formed on the main surface, an easy-adhesion layer may be formed on at least one main surface of the rigid layer.

(1.6.2. 軟質層) 軟質層由比剛性層更軟的材料構成。在本實施方案中,軟質層較佳為支撐材料中構成工件加工用保護片的最表面的層。即,將工件加工用保護片貼附於工件表面後,在進行工件的背面研磨前對軟質層進行研磨。其原因在於,與比較硬的材料相比,比較軟的材料更容易滿足上述支撐材料的物性。 (1.6.2. Soft layer) The soft layer is made of softer material than the rigid layer. In this embodiment, the soft layer is preferably the outermost layer of the supporting material constituting the protective sheet for workpiece processing. That is, after the protective sheet for workpiece processing is attached to the surface of the workpiece, the soft layer is polished before polishing the back surface of the workpiece. The reason for this is that a relatively soft material can more easily satisfy the physical properties of the support material than a relatively hard material.

(1.6.3 軟質層的材質) 在本實施方案中,軟質層可以由軟質樹脂膜構成,也可以使用含有能量射線固化性化合物的軟質層用組合物形成。 (1.6.3 Material of soft layer) In this embodiment, the soft layer may be composed of a soft resin film, or may be formed using a soft layer composition containing an energy ray curable compound.

作為軟質樹脂膜,例如可例示出低密度聚乙烯(LDPE)、高密度聚乙烯(HDPE)、線性低密度聚乙烯(LLDPE)、雙軸拉伸聚丙烯、聚氨酯丙烯酸酯等樹脂膜等。其中,較佳為低密度聚乙烯(LDPE)、線性低密度聚乙烯(LLDPE)、聚氨酯丙烯酸酯等樹脂膜等。另一方面,作為軟質樹脂膜,不佳為乙烯-乙酸乙烯酯共聚物(EVA)、乙烯-(甲基)丙烯酸共聚物、氯乙烯等。另外,上述示例是一般的示例,即使是相同的材料,也可以藉由製造方法滿足上述支撐材料的物性。Examples of the soft resin film include resin films such as low-density polyethylene (LDPE), high-density polyethylene (HDPE), linear low-density polyethylene (LLDPE), biaxially stretched polypropylene, and urethane acrylate. Among them, resin films such as low-density polyethylene (LDPE), linear low-density polyethylene (LLDPE), and polyurethane acrylate are preferred. On the other hand, as the soft resin film, ethylene-vinyl acetate copolymer (EVA), ethylene-(meth)acrylic acid copolymer, vinyl chloride, etc. are not suitable. In addition, the above-mentioned examples are general examples, and even if they are made of the same material, the physical properties of the above-mentioned supporting material can be satisfied by the manufacturing method.

(1.6.4. 軟質層用組合物) 在本實施方案中,較佳軟質層用組合物包含:胺甲酸乙酯(甲基)丙烯酸酯(d1);具有成環原子數為6~20的脂環基或雜環基的聚合性化合物(d2);和/或多官能聚合性化合物(d3)。此外,除了上述(d1)至(d3)成分以外,軟質層用組合物還可以含有具有官能團的聚合性化合物(d4)。此外,除了上述成分以外,軟質層用組合物還可以含有光聚合引發劑。另外,軟質層用組合物可以在不損害上述效果的範圍內含有其他添加劑或樹脂成分。 (1.6.4. Composition for soft layer) In this embodiment, a preferred soft layer composition includes: urethane (meth)acrylate (d1); a polymerizable compound having an alicyclic group or a heterocyclic group with 6 to 20 ring atoms. (d2); and/or a polyfunctional polymerizable compound (d3). In addition to the above-mentioned components (d1) to (d3), the composition for soft layer may further contain a polymerizable compound (d4) having a functional group. In addition to the above-mentioned components, the composition for soft layer may also contain a photopolymerization initiator. In addition, the composition for a soft layer may contain other additives or resin components within the range which does not impair the above-mentioned effects.

以下,對含有能量射線固化性化合物的軟質層用組合物所包含的各成分進行詳細說明。Hereinafter, each component contained in the composition for a soft layer containing an energy ray curable compound will be described in detail.

(1.6.4.1 胺甲酸乙酯(甲基)丙烯酸酯(d1)) 胺甲酸乙酯(甲基)丙烯酸酯(d1)是至少具有(甲基)丙烯醯基和胺甲酸乙酯鍵的化合物,具有藉由能量射線照射來聚合固化的性質。胺甲酸乙酯(甲基)丙烯酸酯(d1)是低聚物或聚合物。 (1.6.4.1 Urethane (meth)acrylate (d1)) Urethane (meth)acrylate (d1) is a compound having at least a (meth)acryl group and a urethane bond, and has a property of being polymerized and cured by energy ray irradiation. Urethane (meth)acrylate (d1) is an oligomer or polymer.

成分(d1)的重均分子量(Mw)較佳為1,000~100,000,更佳為2,000~60,000,進一步較佳為3,000~20,000。此外,作為成分(d1)中的(甲基)丙烯醯基的數量(以下,也稱為「官能團數」),可以是單官能、雙官能或三官能以上,但較佳為單官能或雙官能。The weight average molecular weight (Mw) of component (d1) is preferably 1,000 to 100,000, more preferably 2,000 to 60,000, further preferably 3,000 to 20,000. In addition, the number of (meth)acrylyl groups (hereinafter, also referred to as "the number of functional groups") in component (d1) may be monofunctional, bifunctional, or trifunctional or higher, but is preferably monofunctional or bifunctional. Senses.

例如,成分(d1)可以藉由使末端異氰酸酯胺甲酸乙酯預聚物與具有羥基的(甲基)丙烯酸酯反應而得到,所述末端異氰酸酯胺甲酸乙酯預聚物藉由使多元醇化合物與多價異氰酸酯化合物反應而得到。另外,成分(d1)可以單獨使用或組合使用兩種以上。For example, the component (d1) can be obtained by reacting a terminal isocyanate urethane prepolymer by making a polyol compound and a (meth)acrylate having a hydroxyl group. Obtained by reacting with polyvalent isocyanate compounds. In addition, component (d1) can be used individually or in combination of 2 or more types.

在軟質層用組合物100質量份中,軟質層用組合物中的成分(d1)的含量較佳為10~70質量份,更佳為20~60質量份,進一步較佳為25~55質量份。In 100 parts by mass of the composition for soft layer, the content of component (d1) in the composition for soft layer is preferably 10 to 70 parts by mass, more preferably 20 to 60 parts by mass, and further preferably 25 to 55 parts by mass. share.

(1.6.4.2. 具有成環原子數為6~20的脂環基或雜環基的聚合性化合物(d2)) 成分(d2)是具有成環原子數為6~20的脂環基或雜環基的聚合性化合物,此外,較佳為具有至少一個(甲基)丙烯醯基的化合物,更佳為具有一個(甲基)丙烯醯基的化合物。藉由使用成分(d2),能夠提高所得到的軟質層用組合物的成膜性。 (1.6.4.2. Polymeric compounds (d2) having an alicyclic group or heterocyclic group with 6 to 20 ring atoms) Component (d2) is a polymerizable compound having an alicyclic group or a heterocyclic group with 6 to 20 ring atoms. In addition, it is preferably a compound having at least one (meth)acrylyl group, and more preferably has one (Meth)acrylyl compound. By using component (d2), the film-forming property of the obtained composition for soft layers can be improved.

另外,成分(d2)的定義與後述的成分(d3)、(d4)的定義存在重複的部分,但重複部分包含在成分(d3)或成分(d4)中。例如,具有至少一個(甲基)丙烯醯基、成環原子數為6~20的脂環基或雜環基以及羥基、環氧基、醯胺基、胺基等官能團的化合物雖然包含在成分(d2)和成分(d4)這兩者的定義中,但在本實施方案中,該化合物被視作包括在成分(d4)中。In addition, the definition of component (d2) has an overlapping portion with the definitions of components (d3) and (d4) described later, but the overlapping portion is included in component (d3) or component (d4). For example, compounds having at least one (meth)acrylyl group, an alicyclic group or a heterocyclic group with 6 to 20 ring atoms, and functional groups such as a hydroxyl group, an epoxy group, a amide group, and an amino group are included in the ingredients. in the definition of both (d2) and ingredient (d4), but in this embodiment the compound is deemed to be included in ingredient (d4).

作為具體的成分(d2),例如可列舉出(甲基)丙烯酸異莰基酯等含脂環基的(甲基)丙烯酸酯;(甲基)丙烯酸四氫糠基酯等含雜環基的(甲基)丙烯酸酯;等。另外,成分(d2)可以單獨使用或組合使用兩種以上。Specific components (d2) include, for example, alicyclic group-containing (meth)acrylates such as isobornyl (meth)acrylate; heterocyclic group-containing esters such as tetrahydrofurfuryl (meth)acrylate; (meth)acrylate; etc. In addition, component (d2) can be used individually or in combination of 2 or more types.

在軟質層用組合物100質量份中,軟質層用組合物中的成分(d2)的含量較佳為10~70質量份,更佳為20~60質量份,進一步較佳為25~55質量份。In 100 parts by mass of the composition for soft layer, the content of component (d2) in the composition for soft layer is preferably 10 to 70 parts by mass, more preferably 20 to 60 parts by mass, and further preferably 25 to 55 parts by mass. share.

(1.6.4.3. 多官能聚合性化合物(d3)) 多官能聚合性化合物是指具有兩個以上的能量射線固化性基團的化合物。能量射線固化性基團是含有碳-碳雙鍵的官能團,例如可列舉出(甲基)丙烯醯基、乙烯基、烯丙基、乙烯基苄基等。能量射線固化性基團可以組合兩種以上。使多官能聚合性化合物中的能量射線固化性基團與成分(d1)中的(甲基)丙烯醯基反應、或者使成分(d3)中的能量射線固化性基團彼此反應,由此形成三維網狀結構(交聯結構)。若使用多官能聚合性化合物,則與使用僅包含一個能量射線固化性基團的化合物的情況相比,藉由能量射線照射而形成的交聯結構增加,因此軟質層顯示特殊的黏彈性,最表面的動摩擦係數和拉伸斷裂應力容易成為合適的狀態。 (1.6.4.3. Polyfunctional polymerizable compound (d3)) A polyfunctional polymerizable compound refers to a compound having two or more energy ray-curable groups. The energy ray curable group is a functional group containing a carbon-carbon double bond, and examples thereof include (meth)acrylyl, vinyl, allyl, vinylbenzyl, and the like. Two or more types of energy ray curable groups may be combined. It is formed by reacting the energy ray curable group in the polyfunctional polymerizable compound with the (meth)acrylyl group in the component (d1) or reacting the energy ray curable groups in the component (d3) with each other. Three-dimensional network structure (cross-linked structure). If a polyfunctional polymerizable compound is used, the cross-linked structure formed by energy ray irradiation increases compared to the case of using a compound containing only one energy ray curable group, so the soft layer exhibits special viscoelasticity, and ultimately The surface's dynamic friction coefficient and tensile fracture stress tend to be in appropriate states.

另外,成分(d3)的定義與後述的成分(d4)的定義存在重複的部分,但重複部分包含在成分(d3)中。例如,含有羥基、環氧基、醯胺基、胺基等官能團且具有兩個以上的(甲基)丙烯醯基的化合物包含在成分(d3)和成分(d4)這兩者的定義中,但在本實施方案中,該化合物被視作包含在成分(d3)中。In addition, the definition of component (d3) has an overlapping part with the definition of component (d4) described later, but the overlapping part is included in component (d3). For example, compounds containing functional groups such as hydroxyl groups, epoxy groups, amide groups, and amine groups and having two or more (meth)acrylyl groups are included in the definitions of both component (d3) and component (d4), In this embodiment, however, the compound is considered to be included in ingredient (d3).

從上述角度出發,多官能聚合性化合物中的能量射線固化性基團的數量(官能團數量)較佳為2~10,更佳為3~6。From the above point of view, the number of energy-ray curable groups (number of functional groups) in the multifunctional polymerizable compound is preferably 2 to 10, and more preferably 3 to 6.

此外,成分(d3)的重均分子量較佳為30~40000,更佳為100~10000,進一步較佳為200~1000。In addition, the weight average molecular weight of component (d3) is preferably 30 to 40,000, more preferably 100 to 10,000, and further preferably 200 to 1,000.

作為具體的成分(d3),例如可列舉出二乙二醇二(甲基)丙烯酸酯、乙二醇二(甲基)丙烯酸酯、四乙二醇二(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、1,6-己二醇二(甲基)丙烯酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、新戊四醇三(甲基)丙烯酸酯、新戊四醇四(甲基)丙烯酸酯、二新戊四醇六(甲基)丙烯酸酯、二乙烯基苯、(甲基)丙烯酸乙烯酯、己二酸二乙烯酯、N,N’-伸甲基雙(甲基)丙烯醯胺等。其中,較佳為新戊二醇二(甲基)丙烯酸酯、二新戊四醇六(甲基)丙烯酸酯。另外,成分(d3)可以單獨使用或組合使用兩種以上。Specific components (d3) include, for example, diethylene glycol di(meth)acrylate, ethylene glycol di(meth)acrylate, tetraethylene glycol di(meth)acrylate, and neopentyl glycol. Alcohol di(meth)acrylate, 1,6-hexanediol di(meth)acrylate, trimethylolpropane tri(meth)acrylate, neopentylerythritol tri(meth)acrylate, new Pentaerythritol tetra(meth)acrylate, dineopenterythritol hexa(meth)acrylate, divinylbenzene, vinyl (meth)acrylate, divinyl adipate, N,N'-extension Methyl bis(meth)acrylamide, etc. Among them, neopentyl glycol di(meth)acrylate and dineopenterythritol hexa(meth)acrylate are preferred. In addition, component (d3) can be used individually or in combination of 2 or more types.

在軟質層用組合物100質量份中,軟質層用組合物中的成分(d3)的含量較佳為2~40質量份,更佳為3~20質量份,進一步較佳為5~15質量份。In 100 parts by mass of the composition for a soft layer, the content of the component (d3) in the composition for a soft layer is preferably 2 to 40 parts by mass, more preferably 3 to 20 parts by mass, and further preferably 5 to 15 parts by mass. share.

(1.6.4.4 具有官能團的聚合性化合物(d4)) 成分(d4)是含有羥基、環氧基、醯胺基、胺基等官能團的聚合性化合物,此外,較佳為具有至少一個(甲基)丙烯醯基的化合物,更佳為具有一個(甲基)丙烯醯基的化合物。 (1.6.4.4 Polymerizable compounds with functional groups (d4)) Component (d4) is a polymerizable compound containing functional groups such as a hydroxyl group, an epoxy group, a amide group, and an amine group. In addition, it is preferably a compound having at least one (meth)acrylyl group, and more preferably a compound having one (meth)acrylyl group. base) acrylyl compound.

成分(d4)與成分(d1)的相容性良好,容易將軟質層用組合物的黏度調整在適當的範圍內。此外,即使軟質層做得比較薄,緩衝性能也良好。The component (d4) and the component (d1) have good compatibility, and it is easy to adjust the viscosity of the composition for soft layer within an appropriate range. In addition, even if the soft layer is made relatively thin, the cushioning performance is good.

作為成分(d4),例如可列舉出含羥基的(甲基)丙烯酸酯、含環氧基化合物、含醯胺基化合物、含胺基的(甲基)丙烯酸酯等。其中,較佳為含羥基的(甲基)丙烯酸酯。Examples of the component (d4) include hydroxyl group-containing (meth)acrylate, epoxy group-containing compound, amide group-containing compound, amine group-containing (meth)acrylate, and the like. Among them, hydroxyl-containing (meth)acrylate is preferred.

為了提高軟質層用組合物的成膜性,在軟質層用組合物100質量份中,軟質層用組合物中的成分(d4)的含量較佳為5~40質量份,更佳為7~35質量份,進一步較佳為10~30質量份。In order to improve the film-forming property of the composition for soft layer, the content of component (d4) in the composition for soft layer is preferably 5 to 40 parts by mass, more preferably 7 to 100 parts by mass of the composition for soft layer. 35 parts by mass, more preferably 10 to 30 parts by mass.

(1.6.4.5 成分(d1)~(d4)以外的聚合性化合物(d5)) 在不損害上述效果的範圍內,軟質層形成用組合物可以含有上述成分(d1)~(d4)以外的其他聚合性化合物(d5)。 (1.6.4.5 Polymerizable compounds (d5) other than ingredients (d1) ~ (d4)) The soft layer forming composition may contain other polymerizable compounds (d5) other than the above-mentioned components (d1) to (d4) within a range that does not impair the above-mentioned effects.

作為成分(d5),例如可列舉出具有碳原子數為1~20的烷基的(甲基)丙烯酸烷基酯;乙烯基化合物等。Examples of the component (d5) include alkyl (meth)acrylate having an alkyl group having 1 to 20 carbon atoms; vinyl compounds and the like.

在軟質層用組合物100質量份中,軟質層用組合物中的成分(d5)的含量較佳為0~20質量份,更佳為0~10質量份,進一步較佳為0~5質量份。In 100 parts by mass of the composition for a soft layer, the content of the component (d5) in the composition for a soft layer is preferably 0 to 20 parts by mass, more preferably 0 to 10 parts by mass, and further preferably 0 to 5 parts by mass. share.

(1.6.4.6 光聚合引發劑) 從在形成軟質層時,縮短基於光照射的聚合時間且減少光照射量的角度出發,軟質層用組合物較佳進一步含有光聚合引發劑。 (1.6.4.6 Photopolymerization initiator) From the viewpoint of shortening the polymerization time by light irradiation and reducing the amount of light irradiation when forming the soft layer, the composition for the soft layer preferably further contains a photopolymerization initiator.

作為光聚合引發劑,例如可列舉出苯偶姻化合物、苯乙酮化合物、醯基氧化膦化合物、二茂鈦化合物、噻噸酮化合物、過氧化物化合物以及胺或醌等光敏劑等。更具體而言,例如可列舉出1-羥基環己基苯基酮、2-羥基-2-甲基-1-苯基-丙烷-1-酮等。這些光聚合引發劑可以單獨使用或者組合使用兩種以上。Examples of the photopolymerization initiator include benzoin compounds, acetophenone compounds, phosphine oxide compounds, titanocene compounds, thioxanthone compounds, peroxide compounds, and photosensitizers such as amines and quinones. More specific examples include 1-hydroxycyclohexyl phenyl ketone, 2-hydroxy-2-methyl-1-phenyl-propan-1-one, and the like. These photopolymerization initiators can be used alone or in combination of two or more types.

相對於能量射線固化性化合物的合計量100質量份,軟質層用組合物中的光聚合引發劑的含量較佳為0.05~15質量份,更佳為0.1~10質量份,進一步較佳為0.3~5質量份。The content of the photopolymerization initiator in the composition for soft layer is preferably 0.05 to 15 parts by mass, more preferably 0.1 to 10 parts by mass, and still more preferably 0.3, based on 100 parts by mass of the total amount of energy ray curable compounds. ~5 parts by mass.

(1.6.4.7 其他添加劑) 在不損害上述效果的範圍內,軟質層用組合物可以含有其他添加劑。作為其他添加劑,例如可列舉出抗靜電劑、抗氧化劑、軟化劑(增塑劑)、填充劑、防銹劑、顏料、染料等。在摻合這些添加劑的情況下,相對於能量射線固化性化合物的合計量100質量份,軟質層用組合物中的各添加劑的含量較佳為0.01~6質量份,更佳為0.1~3質量份。 (1.6.4.7 Other additives) The composition for a soft layer may contain other additives within the range which does not impair the above-mentioned effects. Examples of other additives include antistatic agents, antioxidants, softeners (plasticizers), fillers, rust inhibitors, pigments, dyes, and the like. When these additives are blended, the content of each additive in the composition for the soft layer is preferably 0.01 to 6 parts by mass, more preferably 0.1 to 3 parts by mass relative to 100 parts by mass of the total amount of the energy ray curable compound. share.

由含有能量射線固化性化合物的軟質層用組合物形成的軟質層是藉由能量射線照射使上述組成的軟質層用組合物聚合固化而得到的。即,該軟質層是使軟質層用組合物固化而得到之物。A soft layer formed from a soft layer composition containing an energy ray curable compound is obtained by polymerizing and curing the soft layer composition having the above composition by irradiation with energy rays. That is, the soft layer is obtained by curing the composition for a soft layer.

軟質層的厚度沒有特別限定,但較佳為5μm以上100μm以下,更佳為10μm以上90μm以下,進一步較佳為15μm以上80μm以下。The thickness of the soft layer is not particularly limited, but is preferably 5 μm or more and 100 μm or less, more preferably 10 μm or more and 90 μm or less, further preferably 15 μm or more and 80 μm or less.

(2. 黏著劑層) 黏著劑層貼附在工件的表面(即形成有電路、電極等的面),保護表面並支撐工件直到從表面剝離。黏著劑層可以由一層(單層)構成,也可以由兩層以上的多個層構成。在黏著劑層具有多個層的情況下,這些多個層可以彼此相同或不同,構成這些多個層的層的組合沒有特別限制。 (2. Adhesive layer) The adhesive layer is attached to the surface of the workpiece (that is, the surface on which circuits, electrodes, etc. are formed), protecting the surface and supporting the workpiece until it is peeled off from the surface. The adhesive layer may be composed of one layer (single layer) or may be composed of two or more layers. When the adhesive layer has a plurality of layers, the plurality of layers may be the same as or different from each other, and the combination of layers constituting the plurality of layers is not particularly limited.

在本實施方案中,黏著劑層不受特別限制,只要其在常溫下具有合適的壓敏黏合性即可。黏著劑層的厚度沒有特別限定,較佳為5μm以上200μm以下,更佳為10μm以上190μm以下。In this embodiment, the adhesive layer is not particularly limited as long as it has appropriate pressure-sensitive adhesiveness at normal temperature. The thickness of the adhesive layer is not particularly limited, but is preferably from 5 μm to 200 μm, more preferably from 10 μm to 190 μm.

另外,黏著劑層的厚度是指黏著劑層整體的厚度。例如,由多個層構成的黏著劑層的厚度是指構成黏著劑層的所有層的合計厚度。In addition, the thickness of the adhesive layer refers to the thickness of the entire adhesive layer. For example, the thickness of an adhesive layer composed of a plurality of layers refers to the total thickness of all the layers constituting the adhesive layer.

只要具有能夠保護工件表面的程度的黏著性,則對黏著劑層的組成沒有限定。在本實施方案中,黏著劑層較佳由例如丙烯酸類黏著劑、胺甲酸乙酯類黏著劑、橡膠類黏著劑、矽酮類黏著劑等構成。There is no limit to the composition of the adhesive layer as long as it has adhesiveness that can protect the surface of the workpiece. In this embodiment, the adhesive layer is preferably composed of, for example, an acrylic adhesive, a urethane adhesive, a rubber adhesive, a silicone adhesive, or the like.

此外,黏著劑層較佳由能量射線固化性黏著劑形成。藉由使工件加工用保護片的黏著劑層由能量射線固化性黏著劑形成,能夠在貼附于工件時以高黏著力貼附於工件,能夠在從工件上剝離時藉由照射能量射線來降低黏著力。因此,適當地保護工件的電路等,並且在剝離工件加工用保護片時,可防止工件表面的電路、電極等的破壞,防止黏著劑附著於工件。即,由於黏著劑層是能量射線固化性,因此工件加工用保護片的剝離性良好。In addition, the adhesive layer is preferably formed of an energy ray-curable adhesive. By forming the adhesive layer of the protective sheet for workpiece processing from an energy ray-curable adhesive, it can adhere to the workpiece with high adhesion when it is attached to the workpiece, and can be irradiated with energy rays when peeled off from the workpiece. Reduce adhesion. Therefore, the circuits of the workpiece, etc. are appropriately protected, and when the protective sheet for workpiece processing is peeled off, the circuits, electrodes, etc. on the surface of the workpiece are prevented from being damaged, and the adhesive is prevented from adhering to the workpiece. That is, since the adhesive layer is energy-ray curable, the workpiece processing protective sheet has good peelability.

在本實施方案中,能量射線固化性黏著劑較佳由包含丙烯酸類黏著劑的黏著劑組合物構成。丙烯酸類黏著劑含有丙烯酸類聚合物。In this embodiment, the energy ray-curable adhesive is preferably composed of an adhesive composition containing an acrylic adhesive. Acrylic adhesives contain acrylic polymers.

丙烯酸類聚合物為公知的丙烯酸類聚合物即可,但在本實施方案中,較佳為含官能團的丙烯酸類聚合物。含官能團的丙烯酸類聚合物可以是由一種丙烯酸類單體形成的均聚物,也可以是由多種丙烯酸類單體形成的共聚物,還可以是由一種或多種丙烯酸類單體和除丙烯酸類單體以外的單體形成的共聚物。The acrylic polymer may be a known acrylic polymer, but in this embodiment, it is preferably a functional group-containing acrylic polymer. The acrylic polymer containing functional groups can be a homopolymer formed from one acrylic monomer, a copolymer formed from a variety of acrylic monomers, or a copolymer formed from one or more acrylic monomers and acrylic monomers. Copolymers formed from monomers other than monomers.

本實施方案中,含官能團的丙烯酸類聚合物較佳為將(甲基)丙烯酸烷基酯與含官能團單體共聚而成的丙烯酸類共聚物。In this embodiment, the functional group-containing acrylic polymer is preferably an acrylic copolymer obtained by copolymerizing an alkyl (meth)acrylate and a functional group-containing monomer.

作為(甲基)丙烯酸烷基酯,可列舉出(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸正丙酯、(甲基)丙烯酸異丙酯、(甲基)丙烯酸正丁酯、(甲基)丙烯酸異丁酯、(甲基)丙烯酸三級丁酯、(甲基)丙烯酸正戊酯、(甲基)丙烯酸正己酯、(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸異辛酯、(甲基)丙烯酸正辛酯等。Examples of (meth)acrylic acid alkyl esters include methyl (meth)acrylate, ethyl (meth)acrylate, n-propyl (meth)acrylate, isopropyl (meth)acrylate, and (meth)acrylate. )n-butyl acrylate, isobutyl (meth)acrylate, tertiary butyl (meth)acrylate, n-pentyl (meth)acrylate, n-hexyl (meth)acrylate, 2-ethyl (meth)acrylate Hexyl ester, isooctyl (meth)acrylate, n-octyl (meth)acrylate, etc.

含官能團單體是含有反應性官能團的單體。反應性官能團是能夠與後述的交聯劑等其他化合物反應的官能團。作為含官能團單體中的官能團,例如可列舉出羥基、羧基、環氧基,較佳為羥基。Functional group-containing monomers are monomers containing reactive functional groups. The reactive functional group is a functional group capable of reacting with other compounds such as a cross-linking agent described below. Examples of the functional group in the functional group-containing monomer include a hydroxyl group, a carboxyl group, and an epoxy group, and a hydroxyl group is preferred.

作為含羥基單體,例如可列舉出(甲基)丙烯酸羥基甲酯、(甲基)丙烯酸2-羥基乙酯、(甲基)丙烯酸2-羥基丙酯、(甲基)丙烯酸3-羥基丙酯、(甲基)丙烯酸2-羥基丁酯、(甲基)丙烯酸3-羥基丁酯、(甲基)丙烯酸4-羥基丁酯等(甲基)丙烯酸羥基烷基酯;乙烯醇、烯丙醇等非(甲基)丙烯酸類不飽和醇(不具有(甲基)丙烯醯骨架的不飽和醇)。Examples of the hydroxyl-containing monomer include hydroxymethyl (meth)acrylate, 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, and 3-hydroxypropyl (meth)acrylate. Ester, (meth)hydroxyalkyl acrylate such as 2-hydroxybutyl (meth)acrylate, 3-hydroxybutyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate; vinyl alcohol, allyl Non-(meth)acrylic unsaturated alcohols such as alcohol (unsaturated alcohols that do not have a (meth)acryl skeleton).

丙烯酸類聚合物進一步較佳為:具有能量射線固化性基團的能量射線固化性物質與丙烯酸類聚合物所具有的官能團進行反應(例如加成反應)而得到的、具有能量射線固化性基團的能量射線固化性的丙烯酸類聚合物。作為具有能量射線固化性基團的能量射線固化性物質,較佳除了能量射線固化性基團之外,還具有選自異氰酸酯基、環氧基及羧基中的一種或兩種以上的化合物,更佳為具有異氰酸酯基的化合物。所述異氰酸酯基可以與含官能團的丙烯酸類聚合物的羥基進行加成反應。The acrylic polymer is more preferably one obtained by reacting (for example, an addition reaction) an energy-ray-curable substance having an energy-ray-curable group with a functional group of the acrylic polymer and having an energy-ray-curable group. Energy ray curable acrylic polymer. The energy ray curable substance having an energy ray curable group preferably has one or more compounds selected from an isocyanate group, an epoxy group, and a carboxyl group in addition to the energy ray curable group, and more preferably Preferred are compounds having an isocyanate group. The isocyanate group may undergo an addition reaction with the hydroxyl group of the functional group-containing acrylic polymer.

作為具有異氰酸酯基的化合物,例如可列舉出2-甲基丙烯醯氧基乙基異氰酸酯、間異丙烯基-α,α-二甲基苄基異氰酸酯、甲基丙烯醯異氰酸酯、烯丙基異氰酸酯、1,1-(雙丙烯醯氧基甲基)乙基異氰酸酯;藉由二異氰酸酯化合物或多異氰酸酯化合物與(甲基)丙烯酸羥基乙酯的反應得到的丙烯醯基單異氰酸酯化合物;藉由二異氰酸酯化合物或多異氰酸酯化合物、多元醇化合物及(甲基)丙烯酸羥基乙酯的反應得到的丙烯醯基單異氰酸酯化合物等。Examples of the compound having an isocyanate group include 2-methacryloxyethyl isocyanate, m-isopropenyl-α,α-dimethylbenzyl isocyanate, methacrylyl isocyanate, and allyl isocyanate. 1,1-(bisacrylyloxymethyl)ethyl isocyanate; an acrylyl monoisocyanate compound obtained by the reaction of a diisocyanate compound or a polyisocyanate compound and hydroxyethyl (meth)acrylate; by diisocyanate Compounds or acryl monoisocyanate compounds obtained by the reaction of polyisocyanate compounds, polyol compounds and hydroxyethyl (meth)acrylate, etc.

較佳黏著劑組合物除了丙烯酸類聚合物之外,還含有能量射線固化性化合物。作為能量射線固化性化合物,較佳為在分子內具有不飽和基團且能夠藉由能量射線照射來聚合固化的單體或低聚物。A preferred adhesive composition contains an energy ray curable compound in addition to the acrylic polymer. As the energy ray curable compound, a monomer or oligomer which has an unsaturated group in the molecule and can be polymerized and cured by energy ray irradiation is preferred.

作為這種能量射線固化性化合物,例如可列舉出三羥甲基丙烷三(甲基)丙烯酸酯、新戊四醇(甲基)丙烯酸酯、新戊四醇四(甲基)丙烯酸酯、二新戊四醇六(甲基)丙烯酸酯、1,4-丁二醇二(甲基)丙烯酸酯、1,6-己二醇(甲基)丙烯酸酯等多元(甲基)丙烯酸酯單體、胺甲酸乙酯(甲基)丙烯酸酯、聚酯(甲基)丙烯酸酯、聚醚(甲基)丙烯酸酯、環氧(甲基)丙烯酸酯等低聚物。Examples of such energy ray curable compounds include trimethylolpropane tri(meth)acrylate, neopentylerythritol (meth)acrylate, neopentylerythritol tetra(meth)acrylate, and dimethacrylate. Neopenterythritol hexa(meth)acrylate, 1,4-butanediol di(meth)acrylate, 1,6-hexanediol (meth)acrylate and other poly(meth)acrylate monomers , urethane (meth)acrylate, polyester (meth)acrylate, polyether (meth)acrylate, epoxy (meth)acrylate and other oligomers.

其中,較佳為胺甲酸乙酯(甲基)丙烯酸酯低聚物。Among them, urethane (meth)acrylate oligomer is preferred.

能量射線固化性化合物的分子量(在低聚物的情況下為重均分子量)較佳為100~12000,更佳為200~10000,進一步較佳為400~8000,特別較佳為600~6000。The molecular weight (weight average molecular weight in the case of an oligomer) of the energy ray curable compound is preferably 100 to 12,000, more preferably 200 to 10,000, further preferably 400 to 8,000, and particularly preferably 600 to 6,000.

相對於丙烯酸類聚合物100質量份,黏著劑組合物中的能量射線固化性化合物的含量較佳為5~100質量份,更佳為10~70質量份,進一步較佳為15~40質量份。The content of the energy ray curable compound in the adhesive composition is preferably 5 to 100 parts by mass, more preferably 10 to 70 parts by mass, and further preferably 15 to 40 parts by mass relative to 100 parts by mass of the acrylic polymer. .

黏著劑組合物較佳進一步含有交聯劑。交聯劑例如與官能團反應,使含官能團的丙烯酸類聚合物中所含的樹脂彼此交聯。The adhesive composition preferably further contains a cross-linking agent. The crosslinking agent reacts with a functional group, for example, to crosslink resins contained in the functional group-containing acrylic polymer.

作為交聯劑,例如可列舉出甲苯二異氰酸酯、六亞甲基二異氰酸酯、伸二甲苯基二異氰酸酯、這些二異氰酸酯的加成物等異氰酸酯類交聯劑(具有異氰酸酯基的交聯劑);乙二醇縮水甘油醚等環氧類交聯劑(具有縮水甘油基的交聯劑);六[1-(2-甲基)-氮丙啶基]三磷酸三𠯤等氮丙啶類交聯劑(具有氮丙啶基的交聯劑);鋁螯合物等金屬螯合物類交聯劑(具有金屬螯合物結構的交聯劑);異氰脲酸酯類交聯劑(具有異氰脲酸骨架的交聯劑)等。Examples of the cross-linking agent include isocyanate-based cross-linking agents (cross-linking agents having an isocyanate group) such as toluene diisocyanate, hexamethylene diisocyanate, xylylene diisocyanate, and adducts of these diisocyanates; B Epoxy cross-linking agents such as glycol glycidyl ether (cross-linking agents with glycidyl groups); aziridine cross-linking agents such as hexa[1-(2-methyl)-aziridinyl] triphosphate triphosphate agent (cross-linking agent with aziridine group); metal chelate cross-linking agent such as aluminum chelate (cross-linking agent with metal chelate structure); isocyanurate cross-linking agent (with Cross-linking agent with isocyanuric acid skeleton), etc.

從提高黏著劑的內聚力從而提高黏著劑層的黏著力的角度以及容易得到的角度出發,交聯劑較佳為異氰酸酯類交聯劑。From the perspective of improving the cohesion of the adhesive and thereby improving the adhesion of the adhesive layer and being easily available, the cross-linking agent is preferably an isocyanate cross-linking agent.

黏著劑組合物可以進一步含有光聚合引發劑。藉由使黏著劑組合物含有光聚合引發劑,即使照射紫外線等較低能量的能量射線,固化反應也充分進行。The adhesive composition may further contain a photopolymerization initiator. By including a photopolymerization initiator in the adhesive composition, the curing reaction can fully proceed even if low-energy energy rays such as ultraviolet rays are irradiated.

作為光聚合引發劑,可例示出在軟質層用組合物中說明的光聚合引發劑。Examples of the photopolymerization initiator include the photopolymerization initiators described in the composition for soft layers.

(3. 工件加工用保護片的製造方法) 製造本實施方案的工件加工用保護片的方法只要是公知的方法即可。 (3. Method of manufacturing protective sheet for workpiece processing) The method of manufacturing the workpiece processing protective sheet of this embodiment may be a known method.

首先,準備支撐材料。在支撐材料由一層構成的情況下,只要準備構成支撐材料的樹脂膜等即可。在支撐材料由兩層以上構成的情況下,例如,將構成剛性層的樹脂膜和構成軟質層的樹脂膜層疊而製造支撐材料。First, prepare the support material. When the supporting material is composed of one layer, a resin film or the like constituting the supporting material may be prepared. When the support material is composed of two or more layers, for example, a resin film constituting the rigid layer and a resin film constituting the soft layer are laminated to produce the support material.

作為層疊樹脂膜和樹脂膜的方法,可例示出經由形成在一個樹脂膜(例如,構成剛性層的樹脂膜)的一個主面上的易黏合層貼合另一個樹脂膜(例如,構成軟質層的樹脂膜)而層疊的乾式層壓法。An example of a method of laminating a resin film is to laminate another resin film (for example, a resin film constituting a soft layer) via an easy-adhesion layer formed on one main surface of the resin film (for example, a resin film constituting a rigid layer). The dry lamination method of laminating resin film).

在乾式層壓法中,可以使用具有易黏合層的樹脂膜,也可以使用在實施了電暈處理等黏合處理的面上塗佈易黏合層形成用組合物而形成有易黏合層的樹脂膜。In the dry lamination method, a resin film having an easy-adhesion layer can be used, or a resin film in which an easy-adhesion layer-forming composition is applied to a surface that has been subjected to an adhesion treatment such as corona treatment to form an easy-adhesion layer can be used. .

此外,可例示出使用T模製膜機等,將構成軟質層的樹脂熔融、混煉,使構成剛性層的樹脂膜以一定的速度移動,同時對該樹脂膜的一面側擠出熔融的樹脂而進行層壓的方法。此外,可例示出藉由熱封等將構成軟質層的樹脂膜直接層疊在構成剛性層的樹脂膜上的方法。In addition, for example, the resin constituting the soft layer is melted and kneaded using a T-molding film molding machine, the resin film constituting the rigid layer is moved at a constant speed, and the molten resin is extruded from one side of the resin film. And the method of lamination. In addition, a method of directly laminating the resin film constituting the soft layer on the resin film constituting the rigid layer by heat sealing or the like can be exemplified.

此外,在使用軟質層用組合物在剛性層的一個主面上而形成軟質層的情況下,製備軟質層用組合物或將該軟質層用組合物用溶劑稀釋而成的組合物(將這兩種組合物稱為「軟質層用塗佈劑」)。將製備的軟質層用塗佈劑塗佈在剝離膜的剝離面上,根據需要進行乾燥從而在剝離膜上形成塗佈膜,並使該塗佈膜固化(例如,能量射線的照射),由此能夠形成軟質層。然後,將剛性層的一個主面和軟質層貼合。在該軟質層仍具有能量射線固化性的情況下,也可以根據需要進一步進行固化(例如,能量射線的照射)。In addition, when a soft layer is formed on one main surface of the rigid layer using a composition for a soft layer, a composition for a soft layer or a composition in which the composition for a soft layer is diluted with a solvent is prepared (this is The two compositions are called "coating agents for soft layers"). The prepared coating agent for the soft layer is coated on the peeling surface of the release film, dried as necessary to form a coating film on the release film, and the coating film is cured (for example, irradiated with energy rays). This enables the formation of a soft layer. Then, attach one main surface of the rigid layer to the soft layer. If the soft layer still has energy ray curability, it may be further cured (for example, irradiated with energy rays) if necessary.

在製造支撐材料後,作為用於形成黏著劑層的組合物,例如製備構成黏著劑層的黏著劑層用組合物、或將該黏著劑層用組合物用溶劑稀釋而成的組合物(將這兩種組合物稱為「黏著劑層用塗佈劑」)。將製備的黏著劑層用塗佈劑塗佈在剝離膜的剝離面上,根據需要進行乾燥從而在剝離膜上形成黏著劑層。然後,將支撐材料的與砂紙的動摩擦係數被控制在上述範圍內的主面相反側的主面和黏著劑層貼合,得到在支撐材料的一個主面上形成有黏著劑層的工件加工用保護片。或者,也可以將所製備的黏著劑層用塗佈劑直接塗佈在支撐材料的與砂紙的動摩擦係數被控制在上述範圍內的主面相反側的主面上,形成黏著劑層。After the support material is produced, as the composition for forming the adhesive layer, for example, a composition for an adhesive layer constituting the adhesive layer is prepared, or a composition in which the composition for an adhesive layer is diluted with a solvent (the composition for the adhesive layer is diluted with a solvent). These two compositions are called "coating agents for adhesive layers"). The prepared adhesive layer coating agent is applied to the release surface of the release film, and dried as necessary to form an adhesive layer on the release film. Then, the main surface on the opposite side of the main surface of the support material and the adhesive layer are bonded so that the dynamic friction coefficient with the sandpaper is controlled within the above range, thereby obtaining a workpiece processing device with an adhesive layer formed on one main surface of the support material. Protective sheet. Alternatively, the prepared coating agent for the adhesive layer may be directly coated on the main surface of the supporting material on the opposite side to the main surface whose dynamic friction coefficient with the sandpaper is controlled within the above range to form an adhesive layer.

(4. 工件個片化物的製造方法) 如上所述,本實施方案的工件加工用保護片適合用於在一個面(表面)形成有電路等、在另一個面(背面)沒有形成電路等的工件的背面研磨,在進行背面研磨時或在背面研磨後,將工件個片化而得到多個工件個片化物(工件個片化物組)。 (4. Method for manufacturing workpiece fragments) As described above, the protective sheet for workpiece processing of this embodiment is suitable for back grinding of a workpiece in which a circuit or the like is formed on one surface (front surface) and no circuit or the like is formed on the other surface (back surface). When performing back grinding or After back-grinding, the workpiece is flaked to obtain a plurality of flaked workpieces (group of flaked workpieces).

作為工件加工用保護片的非限定性使用例,以下對工件個片化物(例如晶片)的製造方法進行具體說明As a non-limiting use example of a protective sheet for workpiece processing, a method for manufacturing a workpiece piece (for example, a wafer) will be specifically described below.

具體而言,工件個片化物的製造方法較佳至少具備以下的步驟1~步驟4: 步驟1:將上述工件加工用保護片貼附在具有表面和背面的工件的表面的步驟; 步驟2:研磨支撐材料中構成工件加工用保護片的最表面的主面的步驟; 步驟3:研磨工件的背面的步驟; 步驟4:將工件個片化從而得到多個工件個片化物的步驟。 Specifically, the manufacturing method of the workpiece fragments preferably has at least the following steps 1 to 4: Step 1: The step of attaching the above-mentioned protective sheet for workpiece processing to the surface of the workpiece having a front surface and a back surface; Step 2: The step of grinding the main surface of the support material that constitutes the outermost surface of the protective sheet for workpiece processing; Step 3: The step of grinding the back side of the workpiece; Step 4: The step of dicing the workpiece into pieces to obtain multiple pieces of the workpiece.

以下,對上述工件個片化物的製造方法的各步驟進行詳細說明。在說明中,作為工件的具體例使用晶圓,作為工件個片化物的具體例使用晶片。Hereinafter, each step of the manufacturing method of the above-mentioned workpiece flakes will be described in detail. In the description, a wafer is used as a specific example of the workpiece, and a wafer is used as a specific example of the workpiece piece.

(4.1. 步驟1) 在步驟1中,如圖2所示,在晶圓表面100a上貼附本實施方案的工件加工用保護片1的黏著劑層的主面20a。藉由將工件加工用保護片貼附在晶圓的表面,晶圓的表面被充分保護。 (4.1. Step 1) In step 1, as shown in FIG. 2, the main surface 20a of the adhesive layer of the workpiece processing protective sheet 1 of this embodiment is attached to the wafer surface 100a. By attaching the protective sheet for workpiece processing to the surface of the wafer, the surface of the wafer is fully protected.

本製造方法中使用的晶圓的研磨前的厚度沒有特別限定,但通常為500~1000μm左右。此外,在晶圓的表面形成有電路。可以藉由進行包括蝕刻法、剝離法等以往通用的方法在內的各種方法,在晶圓表面形成電路。The thickness of the wafer used in this manufacturing method before polishing is not particularly limited, but is usually about 500 to 1000 μm. In addition, circuits are formed on the surface of the wafer. Circuits can be formed on the wafer surface by various methods including etching, lift-off and other conventional methods.

所形成的電路可以露出,也可以為了保護電路而形成電路保護層。電路保護層通常藉由塗佈構成電路保護層的組合物並進行熱固化而形成。此外,也可以在電路中形成凸點、柱(pillar)等凸狀電極。The formed circuit may be exposed, or a circuit protection layer may be formed to protect the circuit. The circuit protective layer is usually formed by applying a composition constituting the circuit protective layer and thermally curing the composition. In addition, convex electrodes such as bumps and pillars may also be formed in the circuit.

(4.2. 步驟2) 步驟2在步驟1之後進行。在步驟2中,如圖3所示,對支撐材料中構成工件加工用保護片1的最表面的主面10b(12b)進行研磨。構成工件加工用保護片的最表面的主面在圖1A所示的工件加工用保護片中為主面10b,在圖1B和圖1C所示的工件加工用保護片中為主面12b。 (4.2. Step 2) Step 2 follows step 1. In step 2, as shown in FIG. 3, the main surface 10b (12b) constituting the outermost surface of the workpiece processing protective sheet 1 among the support materials is polished. The main surface constituting the outermost surface of the workpiece processing protective sheet is the main surface 10b in the workpiece processing protective sheet shown in FIG. 1A, and the main surface 12b in the workpiece processing protective sheet shown in FIGS. 1B and 1C.

從步驟2的效率化及簡化的角度出發,用於研磨的裝置較佳為進行晶圓的背面研磨的研磨裝置。在這樣的研磨裝置中,如圖3所示,以使磨輪50與構成工件加工用保護片1的最表面的主面10b(12b)相對的方式,將晶圓100的背面100b側保持在卡盤工作臺60上。接著,使磨輪50與晶圓100和工件加工用保護片1一邊相對旋轉一邊接觸,利用磨輪50的磨粒研磨該主面10b(12b)。From the perspective of efficiency and simplification of step 2, the device used for polishing is preferably a polishing device that performs backside polishing of the wafer. In such a polishing device, as shown in FIG. 3 , the back surface 100 b side of the wafer 100 is held on the card in such a manner that the grinding wheel 50 faces the main surface 10 b ( 12 b ) constituting the outermost surface of the workpiece processing protective sheet 1 . on the disk workbench 60. Next, the grinding wheel 50 is brought into contact with the wafer 100 and the workpiece processing protective sheet 1 while relatively rotating, and the main surface 10 b ( 12 b ) is ground using the abrasive grains of the grinding wheel 50 .

構成工件加工用保護片的最表面的支撐材料的主面具有上述物性,因此在進行研磨時,該主面容易被研磨,並且難以附著在磨輪上。其結果,該主面可被適當地研磨,得到凹凸少的面。Since the main surface of the support material constituting the outermost surface of the workpiece processing protective sheet has the above-mentioned physical properties, the main surface is easily polished during grinding and is less likely to adhere to the grinding wheel. As a result, the main surface can be appropriately polished to obtain a surface with few irregularities.

(4.3. 步驟3) 在步驟3中,如圖4所示,步驟2中被研磨的支撐材料的主面10b(12b)保持在卡盤工作臺60上,然後利用磨輪50研磨晶圓100的背面100b。、步驟2中被研磨的支撐材料的主面10b(12b)的凹凸少,因此在工件加工用保護片1的支撐材料與卡盤工作臺60之間幾乎不形成空隙。因此,進行背面研磨時施加的力均等地傳遞到晶圓100的背面100b,晶圓100的背面100b被均勻地研磨。其結果,研磨後的晶圓厚度的不均小、能夠減小研磨後的晶圓的TTV。 (4.3. Step 3) In step 3, as shown in FIG. 4, the main surface 10b (12b) of the support material ground in step 2 is held on the chuck table 60, and then the backside 100b of the wafer 100 is ground using the grinding wheel 50. The main surface 10b (12b) of the support material ground in step 2 has few irregularities, so there is almost no gap formed between the support material of the workpiece processing protective sheet 1 and the chuck table 60. Therefore, the force applied during backside grinding is evenly transmitted to the backside 100b of the wafer 100, and the backside 100b of the wafer 100 is polished uniformly. As a result, the thickness variation of the polished wafer is small, and the TTV of the polished wafer can be reduced.

(4.4. 步驟4) 在步驟4中,將晶圓個片化,得到多個晶片(晶片組)。晶圓的個片化可以在步驟3之後進行,也可以在步驟3中進行。 (4.4. Step 4) In step 4, the wafer is divided into individual wafers to obtain a plurality of wafers (wafer groups). The individualization of the wafer can be performed after step 3 or during step 3.

在步驟3之後進行晶圓的個片化的情況下,例如,解除支撐材料和卡盤工作臺的吸附,以工件加工用保護片和晶圓被貼合的狀態搬運到切割步驟。在切割步驟中,將晶圓個片化為多個晶片。作為個片化的方法,可以採用公知的方法。例如,可例示出使用切割機等的旋轉刀形成貫穿晶圓的表面和背面的溝槽,由此將晶圓切斷而得到個片化的多個晶片的方法。When wafers are to be separated into individual wafers after step 3, for example, the adsorption between the support material and the chuck table is released, and the wafer is transported to the dicing step in a state where the workpiece processing protective sheet and the wafer are bonded. In the dicing step, the wafer is sliced into multiple wafers. As a method of individualizing, a known method can be used. For example, there can be exemplified a method of forming a groove penetrating the front and back surfaces of the wafer using a rotary blade such as a dicing machine, thereby cutting the wafer to obtain a plurality of individual wafers.

在本實施方案中,步驟4較佳為藉由DBG或LDBG進行個片化的步驟。在這種情況下,步驟4在步驟3中進行。In this embodiment, step 4 is preferably a step of individualizing by DBG or LDBG. In this case, step 4 is performed in step 3.

在藉由DBG或LDBG進行個片化的情況下,除了上述步驟1~4之外,還具有從工件的表面側形成溝槽的步驟(步驟5a)、或者從該工件的表面或背面在該工件內部形成改質區域的步驟(步驟5b)。When singulating by DBG or LDBG, in addition to the above-mentioned steps 1 to 4, there is also a step of forming a groove from the surface side of the workpiece (step 5a), or forming a groove from the surface or back side of the workpiece. The step of forming a modified area inside the workpiece (step 5b).

(4.5. 步驟5a) 步驟5a在步驟1~3之前進行。在步驟5a中形成的溝槽是深度比晶圓的厚度淺的溝槽。溝槽的形成可以使用以往公知的晶圓切割裝置等藉由切割來進行。該溝槽成為晶圓分割的起點。即,沿著步驟3中晶圓被分割並個片化為晶片時的分割線形成溝槽。 (4.5. Step 5a) Step 5a is performed before steps 1 to 3. The trench formed in step 5a is a trench with a depth shallower than the thickness of the wafer. The trenches can be formed by dicing using a conventionally known wafer dicing device or the like. This trench becomes the starting point for wafer segmentation. That is, trenches are formed along the dividing lines when the wafer is divided into individual wafers in step 3.

(4.6. 步驟5b) 步驟5b在步驟3之前進行。此外,步驟5b可以在步驟1和步驟2之前進行,也可以在步驟1之後且在步驟2之前進行,還可以在步驟1和步驟2之後進行。在本實施方案中,步驟5b較佳在步驟1和步驟2之後進行。 (4.6. Step 5b) Step 5b occurs before step 3. In addition, step 5b may be performed before step 1 and step 2, may be performed after step 1 and before step 2, or may be performed after step 1 and step 2. In this embodiment, step 5b is preferably performed after step 1 and step 2.

步驟5b中形成的改質區域是晶圓中被脆化的部分。在改質區域中,容易因進行背面研磨時施加在晶圓上的剪切力和壓力而產生龜裂。這樣的龜裂成為晶圓分割的起點。即,沿著步驟3中晶圓被分割並個片化為晶片時的分割線形成改質區域。The modified area formed in step 5b is the embrittled portion of the wafer. In the modified area, cracks are likely to occur due to the shear force and pressure exerted on the wafer during back grinding. Such cracks become the starting point for wafer segmentation. That is, the modified region is formed along the dividing lines when the wafer is divided into wafers in step 3.

改質區域的形成藉由照射聚焦於晶圓內部的雷射來進行。因此,改質區域形成在晶圓的內部。雷射的照射可以從晶圓的表面側進行,也可以從背面側進行。另外,在步驟1之後進行步驟5b、從晶圓的表面進行雷射照射時,隔著工件加工用保護片向晶圓照射雷射。The modified area is formed by irradiating a laser focused on the inside of the wafer. Therefore, the modified region is formed inside the wafer. Laser irradiation can be performed from the front side or the back side of the wafer. In addition, when performing step 5b after step 1 and irradiating the laser from the surface of the wafer, the laser is irradiated to the wafer through the protective sheet for workpiece processing.

在步驟5a或步驟5b之後,進行步驟3。即,在晶圓中形成溝槽或改質區域後,研磨晶圓的背面,將晶圓個片化為多個晶片。換言之,在步驟3中進行步驟4。After step 5a or step 5b, proceed to step 3. That is, after trenches or modified areas are formed in the wafer, the back surface of the wafer is polished to separate the wafer into multiple wafers. In other words, proceed to step 4 in step 3.

在經過步驟5a的步驟3中,以將晶圓減薄至至少到達溝槽的底部的位置的方式進行背面研磨。藉由該背面研磨,溝槽成為貫穿晶圓的切口,晶圓被切口分割,被個片化為各個晶片。In step 3 after step 5a, back grinding is performed in such a manner that the wafer is thinned to at least the bottom of the trench. By this back grinding, the trenches become incisions penetrating the wafer, and the wafer is divided by the incisions and separated into individual wafers.

在經過步驟5b的步驟3中,可以進行背面研磨直至研磨面(晶圓背面)到達改質區域,但研磨面也可以不嚴格地到達改質區域。即,只要研磨到接近改質區域的位置,使得晶圓以改質區域為起點被分割從而得到被個片化的晶片即可。例如,可以研磨到接近改質區域的位置,藉由改質區域中產生的龜裂進行晶圓的完全的個片化。此外,也可以藉由改質區域中產生的龜裂進行晶圓的一部分的個片化,然後貼附後述的拾取膠帶後再拉伸拾取膠帶,由此進行晶圓的完全的個片化。此外,還可以藉由拾取膠帶的拉伸,進行晶圓的完全的個片化。In step 3 after step 5b, backside polishing may be performed until the polishing surface (wafer backside) reaches the modified region, but the polished surface may not strictly reach the modified region. That is, it is sufficient to grind the wafer to a position close to the modified region so that the wafer is divided using the modified region as a starting point to obtain individualized wafers. For example, the wafer can be polished to a position close to the modified region, and the wafer can be completely singulated by cracks generated in the modified region. Alternatively, a part of the wafer may be singulated by using cracks generated in the modified region, and then a pick-up tape described below may be attached and then the pick-up tape may be stretched, thereby completely singulating the wafer. In addition, the wafer can be completely singulated by stretching the pickup tape.

此外,在使用磨輪的背面研磨結束後,也可以進行乾式拋光等應力消除。In addition, after back grinding using a grinding wheel, stress relief such as dry polishing can also be performed.

經過步驟4個片化的晶片的形狀可以是方形,也可以是矩形等細長形狀。此外,個片化的晶片的厚度沒有特別限定,較佳為5~100μm左右,更佳為10~45μm。根據LDBG,使個片化的晶片的厚度為50μm以下較為容易,更佳設為10~45μm。此外,個片化的晶片的大小沒有特別限定。例如,晶片面積較佳小於600mm 2,更佳小於400mm 2,進一步較佳小於120mm 2The shape of the wafer that has been sliced through the four steps can be square, or it can be an elongated shape such as a rectangle. In addition, the thickness of the individualized wafers is not particularly limited, but is preferably about 5 to 100 μm, and more preferably 10 to 45 μm. According to LDBG, it is easy to set the thickness of individual wafers to 50 μm or less, and it is more preferable to set it to 10 to 45 μm. In addition, the size of individualized wafers is not particularly limited. For example, the chip area is preferably less than 600mm 2 , more preferably less than 400mm 2 , and further preferably less than 120mm 2 .

(4.7. 步驟6) 在本實施方案中,工件個片化物的製造方法較佳具有從完成了個片化的工件(即,多個工件個片化物)上剝離工件加工用保護片的步驟(步驟6)。步驟6在步驟4之後進行。步驟6例如藉由以下方法進行。 (4.7. Step 6) In this embodiment, the method for manufacturing a pieced workpiece preferably includes the step of peeling off a protective sheet for workpiece processing from the pieced workpiece (that is, a plurality of pieced workpieces) (step 6). Step 6 follows step 4. Step 6 is performed, for example, by the following method.

首先,在工件加工用保護片的黏著劑層由能量射線固化性黏著劑形成的情況下,進行照射能量射線而使黏著劑層固化的步驟(步驟6a)。如上所述,步驟6a是藉由能量射線的照射而使黏著劑層的黏著力降低的步驟。藉由進行步驟6a,能夠從步驟1~5中被黏著劑層的黏著力充分保護的晶圓的表面上剝離工件加工用保護片,同時抑制工件表面的電路、電極等的破壞、抑制黏著劑附著在工件上。First, when the adhesive layer of the workpiece processing protective sheet is formed of an energy ray-curable adhesive, a step of irradiating energy rays to solidify the adhesive layer is performed (step 6a). As described above, step 6a is a step of reducing the adhesive force of the adhesive layer by irradiating energy rays. By performing step 6a, the protective sheet for workpiece processing can be peeled off from the surface of the wafer that has been fully protected by the adhesive force of the adhesive layer in steps 1 to 5, and at the same time, the damage to the circuits, electrodes, etc. on the surface of the workpiece can be suppressed, and the adhesive can be suppressed. Attached to the work piece.

另一方面,由於能量射線固化性的黏著劑層藉由能量射線的照射而固化,因此從穩定地研磨晶圓的背面、提高研磨後的晶圓的厚度精度的角度出發,較佳進行晶圓的背面研磨時黏著劑層較硬。On the other hand, since the energy ray-curable adhesive layer is cured by irradiation with energy rays, it is preferable to polish the back surface of the wafer and improve the thickness accuracy of the polished wafer. The adhesive layer is harder when grinding the back.

即,研磨後的晶圓的厚度精度與剝離工件加工用保護片時的剝離性處於此消彼長(trade-off)的關係。That is, there is a trade-off relationship between the thickness accuracy of the polished wafer and the peelability when peeling off the protective sheet for workpiece processing.

在本實施方案中,即使固化性的黏著劑層未固化或非固化性的黏著劑層比較軟,但由於支撐材料中構成工件加工用保護片的最表面的主面具有上述物性,因此該主面會被適當地研磨,得到凹凸少的面。其結果,即使黏著劑層比較軟,也能夠減小研磨後的晶圓的TTV。即,能夠兼顧研磨後的晶圓的厚度精度和剝離工件加工用保護片時的剝離性。In this embodiment, even if the curable adhesive layer is not cured or the non-curable adhesive layer is relatively soft, since the main surface of the support material constituting the outermost surface of the workpiece processing protective sheet has the above physical properties, the main surface is The surface will be properly ground to obtain a surface with less unevenness. As a result, even if the adhesive layer is relatively soft, the TTV of the polished wafer can be reduced. That is, it is possible to achieve both thickness accuracy of the polished wafer and peelability when peeling off the protective sheet for workpiece processing.

因此,步驟6a可以在步驟1之後進行,也可以在步驟2之後進行,還可以在步驟5b之後進行,但較佳在步驟3之後進行。Therefore, step 6a can be performed after step 1, step 2, or step 5b, but is preferably performed after step 3.

對於照射能量射線時的條件,例如,較佳能量射線的照度為120~280mW/cm 2,能量射線的光量為100~1000mJ/cm 2。作為能量射線,較佳為紫外線。 Regarding the conditions when irradiating energy rays, for example, the preferred illumination intensity of energy rays is 120~280mW/cm 2 and the light amount of energy rays is 100~1000mJ/cm 2 . As the energy ray, ultraviolet rays are preferred.

在黏著劑層固化後,在多個工件個片化物的背面側貼附拾取膠帶,以能夠拾取的方式進行位置和方向對準。此時,將位於晶圓的外周側的環形框架也貼合在拾取膠帶上,將拾取膠帶的外周緣部固定在環形框架上。可以將晶圓和環形框架同時貼合在拾取膠帶上,也可以在不同的時間點貼合。接著,從保持在拾取膠帶上的多個晶片上剝離工件加工用保護片。After the adhesive layer is cured, pick-up tape is attached to the back side of the multiple workpiece pieces to align the position and direction so that they can be picked up. At this time, the annular frame located on the outer peripheral side of the wafer is also bonded to the pickup tape, and the outer peripheral edge of the pickup tape is fixed to the annular frame. The wafer and ring frame can be bonded to the pick-up tape at the same time or at different points in time. Next, the workpiece processing protective sheet is peeled off from the plurality of wafers held on the pickup tape.

另外,拾取膠帶沒有特別限定,例如是具備基材和設置在基材的一個面上的黏著劑層的黏著片。In addition, the pick-up tape is not particularly limited, and may be, for example, an adhesive sheet including a base material and an adhesive layer provided on one surface of the base material.

以上,對本實施方案進行了說明,但本發明並不限定於上述實施方案,也可以在本發明的範圍內以各種方式進行變更。 實施例 The present embodiment has been described above. However, the present invention is not limited to the above-described embodiment and may be modified in various ways within the scope of the present invention. Example

以下,使用實施例,對發明進行更詳細的說明,但本發明並不限定於這些實施例。Hereinafter, the invention will be described in more detail using examples, but the invention is not limited to these examples.

本實施例中的測定方法和評價方法如下。The measurement method and evaluation method in this example are as follows.

(支撐材料與砂紙的動摩擦係數) 將實施例和比較例中製作的支撐材料切割成長度200mm、寬度80mm的尺寸,得到用於測定動摩擦係數的測定用試樣。將測定用試樣放置在目數為1200目的砂紙上,在測定用試樣上放置一邊的長度為63mm、與測定用試樣的接觸面為毛氈的滑動片,進一步以與滑動片的合計質量為1000g的方式在滑動片上放置砝碼。以100mm/分鐘的速度,沿測定用試樣的長度方向拉測定用試樣,不考慮測定用試樣開始移動時的載荷,將從測定用試樣與砂紙的接觸面間的相對偏移運動開始的時刻到移動60mm為止的載荷的平均值作為動摩擦力。用得到的動摩擦力除以因滑動片和砝碼的合計質量而產生的法向力,由此計算出動摩擦係數。將結果示於表1。 (dynamic friction coefficient between support material and sandpaper) The support materials produced in Examples and Comparative Examples were cut into sizes of 200 mm in length and 80 mm in width to obtain measurement samples for measuring the dynamic friction coefficient. The measurement sample is placed on 1200-grit sandpaper, and a sliding piece with a side length of 63 mm and a felt contact surface with the measuring sample is placed on the measurement sample. Further, the total mass of the measuring sample and the sliding piece is Place a weight on the slide for 1000g. Pull the measurement sample along the length direction of the measurement sample at a speed of 100 mm/min. Regardless of the load when the measurement sample starts to move, the relative offset movement between the contact surface of the measurement sample and the sandpaper will The average value of the load from the beginning to the time of movement of 60 mm is used as the dynamic friction force. The kinetic friction coefficient is calculated by dividing the resulting kinetic friction force by the normal force due to the combined mass of the sliding plate and weight. The results are shown in Table 1.

(支撐材料的拉伸斷裂應力) 將實施例和比較例中製作的支撐材料切割成長度140mm、寬度15mm的尺寸,得到用於測定拉伸斷裂應力的測定用試樣。在所得到的測定用試樣的兩端20mm的部分貼附膜拉伸用的標籤,製作測定物件部分為15mm×100mm的樣品。對於該樣品,使用拉伸試驗機(Shimadzu Corporation製造,裝置名稱「Autograph AG-IS 1kN」),在夾具間距為100mm、拉伸速度為200mm/分鐘的條件下測定拉伸斷裂應力。將結果示於表1。另外,在支撐材料由兩層以上構成的實施例1~3和5與比較例1、3和4中,作為拉伸斷裂應力,測定構成工件加工用保護片的最表面的層、即軟質層的拉伸斷裂應力。 (tensile fracture stress of support material) The support materials prepared in Examples and Comparative Examples were cut into a size of 140 mm in length and 15 mm in width to obtain a measurement sample for measuring tensile fracture stress. Labels for film stretching were attached to the 20 mm portions of both ends of the obtained measurement sample to prepare a sample with a measurement object portion of 15 mm × 100 mm. For this sample, a tensile testing machine (manufactured by Shimadzu Corporation, device name "Autograph AG-IS 1kN") was used to measure the tensile breaking stress under the conditions of a clamp distance of 100 mm and a tensile speed of 200 mm/min. The results are shown in Table 1. In addition, in Examples 1 to 3 and 5 and Comparative Examples 1, 3 and 4 in which the support material is composed of two or more layers, the soft layer, which is the outermost layer constituting the workpiece processing protective sheet, was measured as the tensile fracture stress. tensile breaking stress.

(研磨後的晶圓的TTV評價) 在實施例1至4和比較例1至4中,使用背磨用膠帶層壓機(LINTEC Corporation製造,裝置名稱「RAD-3510F/12」),將實施例和比較例中製作的工件加工用保護片貼附在直徑為12英寸、厚度為775μm的矽晶圓上。接著,使用研磨機(DISCO Corporation製造,裝置名稱「DGP8760」),將工件加工用保護片的最表面研磨12μm。 (TTV evaluation of polished wafers) In Examples 1 to 4 and Comparative Examples 1 to 4, a tape laminator for back grinding (manufactured by LINTEC Corporation, device name "RAD-3510F/12") was used to process the workpieces produced in the Examples and Comparative Examples. The protective sheet is attached to a silicon wafer with a diameter of 12 inches and a thickness of 775 μm. Next, a grinder (manufactured by DISCO Corporation, device name "DGP8760") was used to grind the outermost surface of the workpiece processing protective sheet to 12 μm.

接著,使用背面研磨裝置(DISCO Corporation製造,裝置名稱「DGP8761」)進行研磨(包括乾式拋光)至厚度成為30μm。Next, a back polishing device (manufactured by DISCO Corporation, device name "DGP8761") was used to perform polishing (including dry polishing) until the thickness became 30 μm.

在實施例5中,如上所述,在矽晶圓上貼附工件加工用保護片,將工件加工用保護片的最表面研磨12μm後,使用雷射切割機(DISCO Corporation製造,裝置名稱「DFL7361」),以格子尺寸為10mm×10mm的方式在晶圓形成改質區域。接著,如上所述,對晶圓進行背面研磨直至厚度成為30μm,將晶圓個片化為多個晶片。In Example 5, as described above, a protective sheet for workpiece processing was attached to the silicon wafer, and after grinding the outermost surface of the protective sheet for workpiece processing to 12 μm, a laser cutting machine (manufactured by DISCO Corporation, device name "DFL7361" "), a modified area is formed on the wafer with a grid size of 10mm × 10mm. Next, as described above, the wafer is back-polished until the thickness becomes 30 μm, and the wafer is divided into multiple wafers.

針對研磨後的晶圓或個片化的多個晶片的整個面,使用晶圓厚度映射系統(Hamamatsu Photonics K.K.製造,裝置名稱「C8870-02」),以10mm的測定間距測定晶圓的厚度,根據厚度的最大值和厚度的最小值,計算研磨後的晶圓的TTV,以以下標準進行評價。將結果示於表1。 ◎:工件加工用保護片的最表面可研磨,TTV小於5μm ○:工件加工用保護片的最表面可研磨,TTV為5μm以上且小於10μm ×:工件加工用保護片的最表面可研磨,TTV為10μm以上 ××:工件加工用保護片的最表面不可研磨 A wafer thickness mapping system (manufactured by Hamamatsu Photonics K.K., device name "C8870-02") is used to measure the thickness of the wafer at a measurement pitch of 10 mm over the entire surface of the polished wafer or multiple individual wafers. The TTV of the polished wafer is calculated based on the maximum thickness and the minimum thickness, and evaluated based on the following criteria. The results are shown in Table 1. ◎: The outermost surface of the protective sheet for workpiece processing can be ground, and the TTV is less than 5 μm. ○: The outermost surface of the protective sheet for workpiece processing can be polished, and the TTV is 5 μm or more and less than 10 μm. ×: The outermost surface of the protective sheet for workpiece processing can be polished, and the TTV is 10 μm or more ××: The outermost surface of the protective sheet for workpiece processing cannot be ground.

(實施例1) (1)支撐材料 首先,作為剛性層,準備聚對苯二甲酸乙二醇酯(PET)膜(厚度:50μm)。 (Example 1) (1)Supporting material First, as a rigid layer, a polyethylene terephthalate (PET) film (thickness: 50 μm) is prepared.

接著,使低密度聚乙烯熔融,藉由T模法擠出熔融物,使用冷卻輥對擠出物進行雙軸拉伸,由此得到厚度為25μm的LDPE膜(拉伸彈性模量:420MPa)。在準備的PET膜的一個面上,設置厚度為2.5μm的易黏合層,藉由乾式層壓法貼合作為軟質層的所得到的LDPE膜。接著,在PET膜的另一個面上形成厚度為2.5μm的易黏合層,藉由乾式層壓法貼合作為軟質層的所得到的LDPE膜,得到由剛性層和軟質層層疊而成的由軟質層/剛性層/軟質層這三層構成的支撐材料。支撐材料的厚度為105μm。Next, low-density polyethylene is melted, the melt is extruded by the T-die method, and the extrudate is biaxially stretched using a cooling roll to obtain an LDPE film with a thickness of 25 μm (tensile elastic modulus: 420 MPa). . On one side of the prepared PET film, an easy-adhesion layer with a thickness of 2.5 μm was provided, and the obtained LDPE film was laminated as a soft layer by a dry lamination method. Next, an easy-adhesion layer with a thickness of 2.5 μm was formed on the other side of the PET film, and the obtained LDPE film as a soft layer was laminated by a dry lamination method to obtain a laminated rigid layer and a soft layer. The support material consists of three layers: soft layer/rigid layer/soft layer. The thickness of the support material is 105 μm.

(2)黏著劑層 (黏著劑層用組合物的製備) 使65質量份的丙烯酸正丁酯(BA)、20質量份的甲基丙烯酸甲酯(MMA)及15質量份的丙烯酸2-羥基乙酯(2HEA)共聚而得到的丙烯酸類聚合物與2-甲基丙烯醯氧基乙基異氰酸酯(MOI)反應,使得丙烯酸類聚合物的總羥基(100當量)中的80當量的羥基被加成,由此得到能量射線固化性的丙烯酸類共聚物(Mw:50萬)。 (2)Adhesive layer (Preparation of composition for adhesive layer) An acrylic polymer obtained by copolymerizing 65 parts by mass of n-butyl acrylate (BA), 20 parts by mass of methyl methacrylate (MMA) and 15 parts by mass of 2-hydroxyethyl acrylate (2HEA) and 2- Methacryloyloxyethyl isocyanate (MOI) reacts to add 80 equivalents of hydroxyl groups out of the total hydroxyl groups (100 equivalents) of the acrylic polymer, thereby obtaining an energy-ray curable acrylic copolymer (Mw : 500,000).

向100質量份的該能量射線固化性的丙烯酸類共聚物中,摻合10質量份的多官能胺甲酸乙酯丙烯酸酯類紫外線固化性化合物(Mitsubishi Chemical Corporation製造,產品名稱「UT-4332」)、0.38質量份的異氰酸酯類交聯劑(TOSOH CORPORATION製造,產品名稱「Coronate L」)、1質量份的作為光聚合引發劑的苯基雙(2,4,6-三甲基苯甲醯基)氧化膦,用甲基乙基酮進行稀釋,製備固體成分濃度為34質量%的黏著劑層用組合物的塗佈劑。To 100 parts by mass of this energy ray-curable acrylic copolymer, 10 parts by mass of a polyfunctional urethane acrylate ultraviolet curable compound (manufactured by Mitsubishi Chemical Corporation, product name "UT-4332") was blended. , 0.38 parts by mass of an isocyanate cross-linking agent (manufactured by TOSOH CORPORATION, product name "Coronate L"), 1 part by mass of phenylbis(2,4,6-trimethylbenzoyl) as a photopolymerization initiator ) phosphine oxide was diluted with methyl ethyl ketone to prepare a coating agent of a composition for an adhesive layer having a solid content concentration of 34% by mass.

(工件加工用保護片的製作) 在剝離片(LINTEC Corporation製造,商品名稱「SP-PET381031」)的矽酮剝離處理面上塗佈上述得到的黏著劑層用組合物的塗佈劑,進行加熱乾燥,在剝離片上形成厚度為20μm的黏著劑層。 (Production of protective sheets for workpiece processing) The coating agent of the adhesive layer composition obtained above was applied to the silicone release-treated surface of a release sheet (manufactured by LINTEC Corporation, trade name "SP-PET381031"), and heated and dried to form a 20 μm-thick layer on the release sheet. adhesive layer.

然後,將支撐材料的一個軟質層和黏著劑層貼合,製作工件加工用保護片。即,製造圖1C所示的工件加工用保護片。Then, a soft layer of the support material and an adhesive layer are bonded together to create a protective sheet for workpiece processing. That is, the workpiece processing protective sheet shown in FIG. 1C is manufactured.

(實施例2) 除了以下述方式製作由軟質層/剛性層這兩層構成的支撐材料以外,藉由與實施例1相同的方法,製造圖1B所示的工件加工用保護片。 (Example 2) The workpiece processing protective sheet shown in FIG. 1B was produced in the same manner as in Example 1, except that a support material composed of two layers of soft layer/rigid layer was produced in the following manner.

作為剛性層,準備PET膜(厚度:50μm)。接著,以下述方式製備用於形成軟質層的軟質層用組合物。As a rigid layer, a PET film (thickness: 50 μm) was prepared. Next, a soft layer composition for forming a soft layer is prepared in the following manner.

首先,使聚酯二醇與異佛爾酮二異氰酸酯反應而得到的末端異氰酸酯胺甲酸乙酯預聚物同丙烯酸2-羥基乙酯反應,得到重均分子量(Mw)為5000的雙官能的胺甲酸乙酯丙烯酸酯類低聚物(UA-1)。First, the terminal isocyanate urethane prepolymer obtained by reacting polyester diol and isophorone diisocyanate is reacted with 2-hydroxyethyl acrylate to obtain a bifunctional amine with a weight average molecular weight (Mw) of 5000 Ethyl formate acrylate oligomer (UA-1).

作為能量射線固化性化合物,摻合50質量份的上述合成的胺甲酸乙酯丙烯酸酯類低聚物(UA-1)、45質量份的丙烯酸異莰基酯(IBXA)及5質量份的聚乙二醇600二丙烯酸酯,進一步摻合2質量份的作為光聚合引發劑的1-羥基環己基苯基酮(IGM Resins公司製造,產品名稱「OMNIRAD 1173」),製備軟質層用組合物。As the energy ray curable compound, 50 parts by mass of the above-synthesized urethane acrylate oligomer (UA-1), 45 parts by mass of isobornyl acrylate (IBXA), and 5 parts by mass of poly Ethylene glycol 600 diacrylate was further blended with 2 parts by mass of 1-hydroxycyclohexyl phenyl ketone (manufactured by IGM Resins, product name "OMNIRAD 1173") as a photopolymerization initiator to prepare a composition for a soft layer.

在剝離片(LINTEC Corporation製造,SP-PET381031,厚度:38μm)的矽酮剝離處理面上塗佈上述軟質層用組合物而形成塗佈膜。然後,對該塗佈膜照射紫外線,使該塗佈膜半固化,形成厚度為55μm的軟質層的半固化膜。The above-described composition for soft layer was applied to the silicone release-treated surface of a release sheet (manufactured by LINTEC Corporation, SP-PET381031, thickness: 38 μm) to form a coating film. Then, the coating film was irradiated with ultraviolet rays to semi-cure the coating film, thereby forming a semi-cured film of a soft layer having a thickness of 55 μm.

另外,使用傳送帶式紫外線照射裝置(EYE GRAPHICS Co., Ltd.製造,ECS-401GX)以及高壓水銀燈(EYE GRAPHICS Co., Ltd.製造,H04-L41),在燈高度為260mm、輸出為80W/cm、照度為70mW/cm 2、照射量為30mW/cm 2的照射條件下進行上述紫外線照射。然後,將形成的半固化膜的表面和作為剛性層的PET膜的一個主面貼合,從半固化膜上的剝離片側再次照射紫外線,使該半固化膜完全固化,形成厚度為55μm的軟質層。 In addition, a conveyor-type ultraviolet irradiation device (manufactured by EYE GRAPHICS Co., Ltd., ECS-401GX) and a high-pressure mercury lamp (manufactured by EYE GRAPHICS Co., Ltd., H04-L41) were used, with a lamp height of 260mm and an output of 80W/ cm, the illumination intensity is 70 mW/cm 2 , and the irradiation dose is 30 mW/cm 2 , the above-mentioned ultraviolet irradiation is performed. Then, the surface of the formed semi-cured film was bonded to one main surface of the PET film as a rigid layer, and ultraviolet rays were irradiated again from the release sheet side of the semi-cured film to completely cure the semi-cured film, forming a soft 55 μm thick film. layer.

(實施例3) 在由軟質層/剛性層/軟質層這三層構成的支撐材料中,將線性低密度聚乙烯(LLDPE)形成為厚度為25μm的軟質層,除此以外,藉由與實施例1相同的方法,製造圖1C所示的工件加工用保護片。LLDPE藉由使線性低密度聚乙烯熔融,利用T模法擠出熔融物,使用冷卻輥將擠出物雙軸拉伸而得到。LLDPE的拉伸彈性模量為90MPa。 (Example 3) In the support material composed of three layers: soft layer/rigid layer/soft layer, linear low density polyethylene (LLDPE) was formed into a soft layer with a thickness of 25 μm. The same method as in Example 1 was used. , manufacturing the protective sheet for workpiece processing shown in Figure 1C. LLDPE is obtained by melting linear low-density polyethylene, extruding the melt using the T-die method, and biaxially stretching the extrudate using a cooling roll. The tensile elastic modulus of LLDPE is 90MPa.

(實施例4) 除了使用由一層PET膜(東麗尖端素材公司製造,產品名稱「XG7PH8」,厚度:50μm)構成的支撐材料以外,藉由與實施例1相同的方法製造工件加工用保護片。即,製造圖1A所示的工件加工用保護片。 (Example 4) A protective sheet for workpiece processing was manufactured in the same manner as in Example 1, except that a support material composed of a layer of PET film (manufactured by Toray Advanced Materials Co., Ltd., product name "XG7PH8", thickness: 50 μm) was used. That is, the protective sheet for workpiece processing shown in FIG. 1A is manufactured.

(實施例5) 藉由與實施例2相同的方法製造工件加工用保護片。 (Example 5) A protective sheet for workpiece processing was produced in the same manner as in Example 2.

(比較例1) 在由軟質層/剛性層這兩層構成的支撐材料中,使用以下所示的軟質層用組合物形成軟質層,除此以外,藉由與實施例2相同的方法,製造圖1B所示的工件加工用保護片。 (Comparative example 1) In the supporting material composed of two layers of soft layer/rigid layer, except that the soft layer composition shown below was used to form the soft layer, the same method as in Example 2 was used to produce the support material shown in FIG. 1B Protective sheet for workpiece processing.

使聚碳酸酯二醇與異佛爾酮二異氰酸酯反應而得到的末端異氰酸酯胺甲酸乙酯預聚物同丙烯酸2-羥基乙酯反應,得到重均分子量(Mw)為約25000的胺甲酸乙酯丙烯酸酯類低聚物(UA-2)。The terminal isocyanate urethane prepolymer obtained by reacting polycarbonate diol and isophorone diisocyanate is reacted with 2-hydroxyethyl acrylate to obtain urethane with a weight average molecular weight (Mw) of about 25,000 Acrylate oligomer (UA-2).

作為能量射線固化性化合物,摻合25質量份的上述合成的胺甲酸乙酯丙烯酸酯類低聚物(UA-2)、65質量份的丙烯酸異莰基酯(IBXA)及10質量份的丙烯酸苯基羥丙酯(HPPA),進一步摻合2.0質量份的作為光聚合引發劑的2-羥基-2-甲基-1-苯基-丙烷-1-酮(IGM Resins公司製造,產品名稱「Omnirad 1173」),製備軟質層用組合物。As the energy ray curable compound, 25 parts by mass of the above-synthesized urethane acrylate oligomer (UA-2), 65 parts by mass of isobornyl acrylate (IBXA), and 10 parts by mass of acrylic acid were blended. Phenyl hydroxypropyl ester (HPPA) was further blended with 2.0 parts by mass of 2-hydroxy-2-methyl-1-phenyl-propan-1-one as a photopolymerization initiator (manufactured by IGM Resins, product name " Omnirad 1173"), a composition for preparing a soft layer.

(比較例2) 除了使用由一層聚萘二甲酸乙二醇酯(PEN)膜(厚度:50μm)構成的支撐材料以外,藉由與實施例4相同的方法製造工件加工用保護片。 (Comparative example 2) A protective sheet for workpiece processing was manufactured in the same manner as in Example 4, except that a support material composed of a layer of polyethylene naphthalate (PEN) film (thickness: 50 μm) was used.

(比較例3) 在由軟質層/剛性層/軟質層這三層構成的支撐材料中,將無色透明的乙烯-甲基丙烯酸共聚物形成為厚度為25μm的軟質層,除此以外,藉由與實施例1相同的方法,製造圖1C所示的工件加工用保護片。 (Comparative example 3) In the support material composed of three layers: soft layer/rigid layer/soft layer, the colorless and transparent ethylene-methacrylic acid copolymer was formed into a soft layer with a thickness of 25 μm. The same method as in Example 1 was used. The method shown in Figure 1C is used to manufacture the protective sheet for workpiece processing.

(比較例4) 在由軟質層/剛性層/軟質層這三層構成的支撐材料中,將無色透明的乙烯-醋酸乙烯酯共聚物形成為厚度為25μm的軟質層,除此以外,藉由與實施例1相同的方法,製造圖1C所示的工件加工用保護片。 (Comparative example 4) In the support material composed of three layers: soft layer/rigid layer/soft layer, the same process as in Example 1 was performed except that a colorless and transparent ethylene-vinyl acetate copolymer was formed into a soft layer with a thickness of 25 μm. The method shown in Figure 1C is used to manufacture the protective sheet for workpiece processing.

對所得到的試樣(實施例1~5和比較例1~4)進行上述的測定和評價。將結果示於表1。The above-described measurement and evaluation were performed on the obtained samples (Examples 1 to 5 and Comparative Examples 1 to 4). The results are shown in Table 1.

[表1]    支撐材料 評價 構成 動摩擦係數 最表面構成層的 拉伸斷裂應力 (MPa) 研磨後的 晶圓的TTV 實施例1 軟質層/剛性層/軟質層 1.09 11 實施例2 軟質層/剛性層 1.27 24 實施例3 軟質層/剛性層/軟質層 1.11 17 實施例4 一層 0.69 220 實施例5 軟質層/剛性層 1.27 24 比較例1 軟質層/剛性層 1.44 61 ×× 比較例2 一層 0.68 270 ×× 比較例3 軟質層/剛性層/軟質層 1.46 28 ×× 比較例4 軟質層/剛性層/軟質層 1.56 16 ×× [Table 1] support material Evaluation constitute dynamic friction coefficient Tensile fracture stress of the outermost layer (MPa) TTV of polished wafer Example 1 Soft layer/rigid layer/soft layer 1.09 11 Example 2 Soft layer/rigid layer 1.27 twenty four Example 3 Soft layer/rigid layer/soft layer 1.11 17 Example 4 first floor 0.69 220 Example 5 Soft layer/rigid layer 1.27 twenty four Comparative example 1 Soft layer/rigid layer 1.44 61 ×× Comparative example 2 first floor 0.68 270 ×× Comparative example 3 Soft layer/rigid layer/soft layer 1.46 28 ×× Comparative example 4 Soft layer/rigid layer/soft layer 1.56 16 ××

根據表1確認到,在支撐材料與砂紙的動摩擦係數及支撐材料的拉伸斷裂應力在上述範圍內的情況下,藉由在研磨支撐材料中構成工件加工用保護片的最表面的主面後,對晶圓進行背面研磨,背面研磨後的晶圓的TTV小。It was confirmed from Table 1 that when the dynamic friction coefficient between the support material and the sandpaper and the tensile fracture stress of the support material are within the above ranges, by polishing the main surface of the outermost surface of the workpiece processing protective sheet in the support material , perform back-grinding on the wafer, and the TTV of the wafer after back-grinding is small.

1:工件加工用保護片 10:支撐材料 11:剛性層 12:軟質層 20:黏著劑層 1: Protective sheet for workpiece processing 10: Support material 11: Rigid layer 12:Soft layer 20: Adhesive layer

圖1A為示出本實施方案的工件加工用保護片的一個實例的剖面示意圖。 圖1B為示出本實施方案的工件加工用保護片的另一實例的剖面示意圖。 圖1C為示出本實施方案的工件加工用保護片的另一實例的剖面示意圖。 圖2為用於說明將本實施方案的工件加工用保護片和工件貼合的步驟的剖面示意圖。 圖3為用於說明針對本實施方案的工件加工用保護片,研磨工件加工用保護片的最表面的步驟的剖面示意圖。 圖4為用於說明針對本實施方案的工件加工用保護片,研磨工件的背面的步驟的剖面示意圖。 1A is a schematic cross-sectional view showing an example of the protective sheet for workpiece processing according to this embodiment. 1B is a schematic cross-sectional view showing another example of the protective sheet for workpiece processing according to this embodiment. 1C is a schematic cross-sectional view showing another example of the protective sheet for workpiece processing according to this embodiment. 2 is a schematic cross-sectional view for explaining the step of bonding the workpiece processing protective sheet and the workpiece according to this embodiment. 3 is a schematic cross-sectional view for explaining the step of grinding the outermost surface of the protective sheet for workpiece processing of the protective sheet for workpiece processing according to this embodiment. 4 is a schematic cross-sectional view for explaining the step of grinding the back surface of the workpiece according to the protective sheet for workpiece processing according to this embodiment.

1:工件加工用保護片 1: Protective sheet for workpiece processing

10:支撐材料 10: Support material

11:剛性層 11: Rigid layer

12:軟質層 12:Soft layer

12b:主面 12b: Main side

13:軟質層 13:Soft layer

20:黏著劑層 20: Adhesive layer

20a:主面 20a: Main side

Claims (10)

一種工件加工用保護片,其具有支撐材料和配置於所述支撐材料的一個主面上的黏著劑層,其中, 所述支撐材料的另一個主面構成所述工件加工用保護片的最表面,所述工件加工用保護片的最表面與目數為1200目的砂紙的動摩擦係數為1.40以下, 所述支撐材料的拉伸斷裂應力為250MPa以下。 A protective sheet for workpiece processing, which has a support material and an adhesive layer arranged on one main surface of the support material, wherein: The other main surface of the support material constitutes the outermost surface of the protective sheet for workpiece processing, and the dynamic friction coefficient between the outermost surface of the protective sheet for workpiece processing and the 1200-mesh sandpaper is 1.40 or less, The tensile fracture stress of the support material is below 250 MPa. 如請求項1所述的工件加工用保護片,其中, 所述支撐材料由兩層以上構成。 The protective sheet for workpiece processing according to claim 1, wherein, The support material is composed of two or more layers. 如請求項2所述的工件加工用保護片,其中, 所述支撐材料具有剛性層和比所述剛性層更軟的軟質層,所述軟質層的一個主面構成所述工件加工用保護片的最表面。 The protective sheet for workpiece processing as described in claim 2, wherein, The support material has a rigid layer and a soft layer that is softer than the rigid layer, and one main surface of the soft layer constitutes the outermost surface of the workpiece processing protective sheet. 如請求項1至3中任一項所述的工件加工用保護片,其中, 所述工件加工用保護片以在研磨具有表面和背面的工件的背面的步驟前,所述工件的表面與所述黏著劑層貼合,且所述工件加工用保護片的最表面被研磨的方式進行使用。 The protective sheet for workpiece processing according to any one of claims 1 to 3, wherein, The protective sheet for workpiece processing is such that before the step of grinding the back surface of the workpiece having a front surface and a back surface, the surface of the workpiece is bonded to the adhesive layer, and the outermost surface of the protective sheet for workpiece processing is ground. method to use. 如請求項4所述的工件加工用保護片,其中, 將所述工件加工用保護片使用於:對在所述工件的表面形成有溝槽或在所述工件的內部形成有改質區域的工件的背面進行研磨,從而將所述工件個片化為工件個片化物的步驟。 The protective sheet for workpiece processing as described in claim 4, wherein, The protective sheet for workpiece processing is used to grind the back surface of a workpiece having grooves formed on the surface of the workpiece or a modified region formed inside the workpiece, thereby dividing the workpiece into individual pieces. The step of individualizing the workpiece. 如請求項1至5中任一項所述的工件加工用保護片,其中, 所述黏著劑層為能量射線固化性。 The protective sheet for workpiece processing according to any one of claims 1 to 5, wherein, The adhesive layer is energy ray curable. 一種工件個片化物的製造方法,其具有: 將如請求項1至6中任一項所述的工件加工用保護片的黏著劑層與具有表面和背面的工件的表面貼合的步驟; 研磨所述工件的背面的步驟;以及 對所述工件進行個片化,從而得到多個工件個片化物的步驟。 A method for manufacturing workpiece fragments, which has: The step of bonding the adhesive layer of the workpiece processing protective sheet as described in any one of claims 1 to 6 to the surface of the workpiece having a front surface and a back surface; the step of grinding the back side of said workpiece; and The step of dicing the workpiece into pieces to obtain a plurality of diced workpieces. 如請求項7所述的工件個片化物的製造方法,其還具有:針對如請求項4或5所述的工件加工用保護片,研磨所述工件加工用保護片的最表面的步驟, 研磨所述工件的背面的步驟在研磨所述工件加工用保護片的最表面的步驟後進行。 The method for manufacturing a pieced workpiece according to claim 7, further comprising the step of grinding the outermost surface of the protective sheet for workpiece processing according to claim 4 or 5, The step of grinding the back surface of the workpiece is performed after the step of grinding the outermost surface of the workpiece processing protective sheet. 如請求項7或8所述的工件個片化物的製造方法,其還具有:在所述工件的表面形成溝槽的步驟、或從所述工件的表面或背面在所述工件的內部形成改質區域的步驟, 在研磨所述工件的背面的步驟中,以所述溝槽或所述改質區域為起點而個片化為多個工件個片化物。 The method for manufacturing a pieced workpiece according to claim 7 or 8, which further includes the step of forming a groove on the surface of the workpiece, or forming a groove inside the workpiece from the surface or back of the workpiece. Steps in the qualitative area, In the step of grinding the back surface of the workpiece, the groove or the modified region is used as a starting point to slice the workpiece into a plurality of workpiece slices. 如請求項7至9中任一項所述的工件個片化物的製造方法,其還具有:從所述工件個片化物上剝離所述工件加工用保護片的步驟。The method for manufacturing a pieced workpiece according to any one of claims 7 to 9, further comprising: peeling off the protective sheet for workpiece processing from the pieced workpiece.
TW112111480A 2022-03-30 2023-03-27 Protective sheet for workpiece processing and method for manufacturing divided workpiece capable of reducing TTV of the workpiece after back grinding TW202338964A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022056786A JP2023148645A (en) 2022-03-30 2022-03-30 Protective sheet for workpiece processing and manufacturing method for singulated workpiece
JP2022-056786 2022-03-30

Publications (1)

Publication Number Publication Date
TW202338964A true TW202338964A (en) 2023-10-01

Family

ID=88287612

Family Applications (1)

Application Number Title Priority Date Filing Date
TW112111480A TW202338964A (en) 2022-03-30 2023-03-27 Protective sheet for workpiece processing and method for manufacturing divided workpiece capable of reducing TTV of the workpiece after back grinding

Country Status (4)

Country Link
JP (1) JP2023148645A (en)
KR (1) KR20230141501A (en)
CN (1) CN116890299A (en)
TW (1) TW202338964A (en)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014175334A (en) 2013-03-06 2014-09-22 Furukawa Electric Co Ltd:The Adhesive tape for semiconductor wafer surface protection

Also Published As

Publication number Publication date
JP2023148645A (en) 2023-10-13
CN116890299A (en) 2023-10-17
KR20230141501A (en) 2023-10-10

Similar Documents

Publication Publication Date Title
JP7207778B2 (en) Adhesive tape for semiconductor processing and method for manufacturing semiconductor device
CN109743877B (en) Adhesive tape for semiconductor processing and method for manufacturing semiconductor device
TWI823944B (en) Adhesive tape for semiconductor processing and method of manufacturing semiconductor device
TWI809120B (en) Adhesive tape for semiconductor processing and method for manufacturing semiconductor device
JP6018747B2 (en) Wafer processing adhesive sheet and semiconductor wafer processing method using the sheet
JPWO2019181730A1 (en) Manufacturing method of adhesive tape and semiconductor device
JP7326249B2 (en) Adhesive tape and method for manufacturing semiconductor device
TWI744468B (en) Adhesive tape for semiconductor processing and manufacturing method of semiconductor device
JP5016703B2 (en) Method for manufacturing adhesive sheet and electronic component
TW202338964A (en) Protective sheet for workpiece processing and method for manufacturing divided workpiece capable of reducing TTV of the workpiece after back grinding
KR102642081B1 (en) Manufacturing method of adhesive tape and semiconductor device
WO2022201789A1 (en) Semiconductor processing adhesive tape, and method for manufacturing semiconductor device
WO2022209118A1 (en) Semiconductor processing adhesive tape, and method for manufacturing semiconductor device
WO2022201788A1 (en) Semiconductor processing adhesive tape, and method for manufacturing semiconductor device
WO2022201790A1 (en) Pressure-sensitive adhesive tape for semiconductor processing and semiconductor device fabrication method
WO2022209119A1 (en) Semiconductor processing adhesive tape, and method for manufacturing semiconductor device
TW202334361A (en) Protective sheet for workpiece processing and manufacturing method of singulated workpiece reducing defective singulated workpieces after grinding even when the singulated workpieces are obtained by grinding the workpieces using LDBG
WO2023189168A1 (en) Workpiece processing method
WO2024070692A1 (en) Workpiece processing method
TW202344659A (en) Protective sheet for workpiece processing and manufacturing method for singulated workpiece
TW202336852A (en) Method for manufacturing protective sheet for workpiece processing and workpiece individualized article wherein protective sheet for workpiece processing includes a buffer layer whose stress relaxation rate at 23 DEG C is 50% or less, and whose Young's modulus at 23 DEG C is 400 MPa or more