TW202335486A - Solid-state imaging device and electronic apparatus - Google Patents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H—ELECTRICITY
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- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
- H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
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Abstract
Description
本揭示係關於一種固體攝像裝置及電子機器。The present disclosure relates to a solid-state imaging device and electronic equipment.
近年來,業已存在以矩陣狀排列之複數個像素接收構成光之三原色之紅(R)、綠(G)、藍(B)各者之波長成分並產生彩色圖像之影像感測器(亦稱為固體攝像裝置)。於如此之可拍攝彩色圖像之影像感測器中,一般而言,採用以2×2之4個像素單位重複排列將紅(R)、綠(G)、藍(B)各個波長成分選擇性地透過之彩色濾光器之所謂之拜耳排列之彩色濾光器。又,近年來,出現了將構成拜耳排列之各個彩色濾光器進一步分割成2×2之4個之所謂之四倍拜耳排列之彩色濾光器等各種彩色濾光器排列。 [先前技術文獻] [專利文獻] In recent years, there have been image sensors (also known as image sensors) in which a plurality of pixels arranged in a matrix receive the wavelength components of each of the three primary colors of light: red (R), green (G), and blue (B) and generate a color image. called a solid-state imaging device). In such an image sensor that can capture color images, generally speaking, red (R), green (G), and blue (B) wavelength components are selected by repeatedly arranging 4 pixel units of 2×2. The so-called Bayer array color filter is a color filter that transmits light naturally. In addition, in recent years, various color filter arrangements have appeared, such as a so-called quadruple Bayer array color filter in which each color filter constituting the Bayer array is further divided into 2×2/4. [Prior technical literature] [Patent Document]
[專利文獻1]日本特開2010-193200號公報 [專利文獻2]日本特開2013-143730號公報 [專利文獻3]日本特開2016-9872號公報 [Patent Document 1] Japanese Patent Application Publication No. 2010-193200 [Patent Document 2] Japanese Patent Application Publication No. 2013-143730 [Patent Document 3] Japanese Patent Application Publication No. 2016-9872
[發明所欲解決之問題][Problem to be solved by the invention]
且說,近年來,業界曾開發搭載使解析度變化之所謂之合併模式之影像感測器。然而,於先前之影像感測器中,在使解析度變化時,存在畫質劣化之可能性。例如,於對於彩色濾光器採用拜耳排列之影像感測器中,以不進行合併之全像素模式進行攝像之情形之畫質高,但於因合併而低解析度化之情形下,有可能產生鋸齒等,畫質降低至解析度之降低以上。又,例如,於對於彩色濾光器採用四倍拜耳排列之影像感測器中,以低解析度進行讀出之情形之畫質高,但存在以全像素模式進行攝像之情形之畫質較採用拜耳排列之情形之畫質降低之可能性。In addition, in recent years, the industry has developed image sensors equipped with a so-called merge mode that changes the resolution. However, in previous image sensors, when the resolution is changed, there is a possibility of image quality deterioration. For example, in an image sensor that uses a Bayer arrangement for color filters, the image quality is high when imaging is performed in full-pixel mode without binning, but when the resolution is lowered due to binning, it may Alias, etc. are generated, and the image quality is reduced beyond the reduction in resolution. Also, for example, in an image sensor using a quadruple Bayer arrangement for color filters, the image quality is high when reading out at low resolution, but the image quality when imaging is performed in full-pixel mode is sometimes poor. There is a possibility of image quality degradation when Bayer arrangement is used.
為此,於本揭示中提案一種可抑制畫質之降低之固體攝像裝置及電子機器。 [解決問題之技術手段] Therefore, this disclosure proposes a solid-state imaging device and electronic equipment that can suppress degradation of image quality. [Technical means to solve problems]
為了解決上述之問題,本揭示之一態樣之固體攝像裝置包含由複數個像素矩陣狀排列而成之像素陣列部,該複數個像素分別包含將第1波長成分之光進行光電轉換之複數個第1像素;且前述像素分別包含:光電轉換部,其將入射光進行光電轉換;傳送電晶體,其控制在前述光電轉換部產生之電荷之傳送;浮動擴散區域,其蓄積自前述光電轉換部經由前述傳送電晶體傳送之前述電荷;及放大電晶體,其使與蓄積於前述浮動擴散區域之前述電荷相應之電壓信號出現於信號線;且前述複數個第1像素於前述像素陣列部中排列於第1斜向方向;排列於前述第1斜向方向之前述複數個第1像素中之至少2個第1像素共有1個前述浮動擴散區域。In order to solve the above-mentioned problems, a solid-state imaging device according to one aspect of the present disclosure includes a pixel array section composed of a plurality of pixels arranged in a matrix. The plurality of pixels each include a plurality of photoelectric converters that photoelectrically convert light of the first wavelength component. The first pixel; and the aforementioned pixels respectively include: a photoelectric conversion portion that photoelectrically converts incident light; a transfer transistor that controls the transfer of charges generated in the aforementioned photoelectric conversion portion; and a floating diffusion region that accumulates from the aforementioned photoelectric conversion portion The aforementioned charge is transferred via the aforementioned transfer transistor; and an amplification transistor causes a voltage signal corresponding to the aforementioned charge accumulated in the aforementioned floating diffusion region to appear on a signal line; and the aforementioned plurality of first pixels are arranged in the aforementioned pixel array portion. In the first oblique direction; at least two first pixels among the plurality of first pixels arranged in the first oblique direction share one floating diffusion area.
以下,針對本揭示之一實施形態,基於圖式詳細地說明。此外,於以下之實施形態中,藉由對於同一部位賦予同一符號,而省略重複之說明。Hereinafter, one embodiment of the present disclosure will be described in detail based on the drawings. In addition, in the following embodiments, the same parts are assigned the same reference numerals, and repeated descriptions are omitted.
又,依照以下所示之項目順序說明本揭示。 1. 第1實施形態 1.1 電子機器(攝像裝置)之構成例 1.2 影像感測器之構成例 1.3 像素之構成例 1.3.1 具有FD共有構造之像素之構成例 1.4 單位像素之基本功能例 1.5 影像感測器之積層構造例 1.6 像素之基本構造例 1.7 畫質降低之要因 1.8 畫質降低之抑制 1.9 像素排列之重排馬賽克 1.10 像素間特性差之修正 1.11 對於全域快門方式之應用 1.12 對於另一彩色濾光器排列之應用 1.13 總結 2. 第2實施形態 2.1 彩色濾光器排列及像素共有構造之例 2.2 彩色濾光器排列及像素共有構造之變化例 2.2.1 第1變化例 2.2.2 第2變化例 2.2.3 第3變化例 3. 第3實施形態 3.1 變化例 4. 對於智慧型手機之應用例 5. 對於移動體之應用例 6. 對於內視鏡手術系統之應用例 In addition, this disclosure will be explained in accordance with the order of items shown below. 1. First embodiment 1.1 Example of the structure of electronic equipment (camera device) 1.2 Structure example of image sensor 1.3 Example of pixel composition 1.3.1 Example of pixel configuration with FD common structure 1.4 Basic function example of unit pixel 1.5 Example of multilayer structure of image sensor 1.6 Basic structure example of pixel 1.7 Reasons for reduced image quality 1.8 Suppression of image quality degradation 1.9 Pixel arrangement rearrangement mosaic 1.10 Correction of characteristic differences between pixels 1.11 Application of global shutter method 1.12 Application to another color filter arrangement 1.13 Summary 2. Second embodiment 2.1 Example of color filter arrangement and pixel common structure 2.2 Variation examples of color filter arrangement and pixel common structure 2.2.1 The first variation 2.2.2 Second variation 2.2.3 The third variation 3. Third embodiment 3.1 Variation examples 4. Application examples for smartphones 5. Application examples for moving objects 6. Application examples of endoscopic surgery system
1. 第1實施形態 首先,針對本揭示之第1實施形態,參照圖式,詳細地說明。此外,於本實施形態中,例示對於CMOS(Complementary Metal-Oxide-Semiconductor,互補式金屬氧化物半導體)型固體攝像裝置(以下亦稱為影像感測器)應用本實施形態之技術之情形,但不限定於此,例如可對於CCD(Charge Coupled Device,電荷耦合裝置)型影像感測器或TOF(Time of Flight,飛行時間)感測器抑或EVS(Event-based Vision Sensor,基於事件之視覺感測器)等具備光電轉換元件之各種感測器應用本實施形態之技術。 1. First embodiment First, the first embodiment of the present disclosure will be described in detail with reference to the drawings. In addition, in this embodiment, the case where the technology of this embodiment is applied to a CMOS (Complementary Metal-Oxide-Semiconductor) type solid-state imaging device (hereinafter also referred to as an image sensor) is exemplified. However, It is not limited to this. For example, it can be a CCD (Charge Coupled Device) type image sensor or a TOF (Time of Flight) sensor or an EVS (Event-based Vision Sensor). The technology of this embodiment is applied to various sensors equipped with photoelectric conversion elements, such as detectors.
1.1 電子機器(攝像裝置)之構成例 圖1係顯示搭載有第1實施形態之影像感測器之電子機器(攝像裝置)之概略構成例之方塊圖。如圖1所示,攝像裝置1例如具備攝像透鏡11、影像感測器10、記憶部14、及處理器13。 1.1 Example of the structure of electronic equipment (camera device) FIG. 1 is a block diagram showing a schematic configuration example of an electronic device (camera device) equipped with the image sensor according to the first embodiment. As shown in FIG. 1 , the imaging device 1 includes, for example, an imaging lens 11 , an image sensor 10 , a memory unit 14 , and a processor 13 .
攝像透鏡11係將入射光集光且將該像成像於影像感測器10之受光面之光學系統之一例。受光面可為影像感測器10中之供光電轉換元件排列之面。影像感測器10將入射光進行光電轉換並產生圖像資料。又,影像感測器10對產生之圖像資料執行雜訊去除或白平衡調整等特定信號處理。The imaging lens 11 is an example of an optical system that collects incident light and forms the image on the light-receiving surface of the image sensor 10 . The light-receiving surface may be a surface of the image sensor 10 on which the photoelectric conversion elements are arranged. The image sensor 10 photoelectrically converts the incident light and generates image data. In addition, the image sensor 10 performs specific signal processing such as noise removal or white balance adjustment on the generated image data.
記憶部14例如由快閃記憶體或DRAM(Dynamic Random Access Memory,動態隨機存取記憶體)、抑或SRAM(Static Random Access Memory,靜態隨機存取記憶體)等構成,記錄自影像感測器10輸入之圖像資料等。The memory unit 14 is composed of, for example, flash memory, DRAM (Dynamic Random Access Memory, dynamic random access memory), or SRAM (Static Random Access Memory, static random access memory), etc., and records data from the image sensor 10 Input image data, etc.
處理器13例如利用CPU(Central Processing Unit,中央處理單元)等構成,可包含執行操作系統或各種應用軟體等之應用處理器、或GPU(Graphics Processing Unit,圖形處理單元)、或是基頻處理器等。處理器13對自影像感測器10輸入之圖像資料或自記憶部14讀出之圖像資料等,執行根據需要之各種處理,或執行對使用者之顯示,或是經由特定之網路向外部發送。The processor 13 is composed of a CPU (Central Processing Unit), for example, and may include an application processor that executes an operating system or various application software, a GPU (Graphics Processing Unit), or baseband processing. Devices etc. The processor 13 performs various processing as needed on the image data input from the image sensor 10 or the image data read from the memory unit 14, or performs display to the user, or performs display to the user through a specific network. Send externally.
1.2 影像感測器之構成例 圖2係顯示第1實施形態之CMOS型影像感測器之概略構成例之方塊圖。此處,CMOS型影像感測器係應用CMOS製程、或部分使用其而製作之影像感測器。例如,本實施形態之影像感測器10係由背面照射型影像感測器構成。 1.2 Structure example of image sensor FIG. 2 is a block diagram showing an example of the schematic configuration of the CMOS image sensor according to the first embodiment. Here, the CMOS image sensor is an image sensor produced using a CMOS process or partially using it. For example, the image sensor 10 of this embodiment is composed of a back-illuminated image sensor.
本實施形態之影像感測器10例如具有由配置有像素陣列部21之受光晶片41(基板)、及配置有周邊電路之電路晶片42(基板)積層而成之堆疊構造(例如參照圖5)。於周邊電路中,例如可包含垂直驅動電路22、行處理電路23、水平驅動電路24及系統控制部25。The image sensor 10 of this embodiment has, for example, a stacked structure in which a light-receiving chip 41 (substrate) on which the pixel array portion 21 is arranged and a circuit chip 42 (substrate) on which peripheral circuits are arranged are laminated (for example, see FIG. 5 ). . The peripheral circuit may include, for example, a vertical drive circuit 22, a row processing circuit 23, a horizontal drive circuit 24, and a system control unit 25.
影像感測器10進一步具備信號處理部26及資料儲存部27。信號處理部26及資料儲存部27可與周邊電路設置於相同之半導體晶片,亦可設置於分別之半導體晶片。The image sensor 10 further includes a signal processing unit 26 and a data storage unit 27 . The signal processing unit 26 and the data storage unit 27 may be provided on the same semiconductor chip as the peripheral circuit, or may be provided on separate semiconductor chips.
像素陣列部21具有下述構成,即:於列方向及行方向、亦即矩陣狀地二維格子狀配置有具有產生且蓄積與受光之光量相應之電荷之光電轉換元件之像素30。此處,列方向意指像素列之像素之排列方向(圖式中為橫向方向),行方向意指像素行之像素之排列方向(圖式中為縱向方向)。於後文描述像素30之具體的電路構成及像素構造之細節。The pixel array section 21 has a structure in which pixels 30 having photoelectric conversion elements that generate and accumulate charges corresponding to the amount of light received are arranged in a two-dimensional grid in the column direction and the row direction, that is, in a matrix form. Here, the column direction means the arrangement direction of the pixels in the pixel column (horizontal direction in the figure), and the row direction means the arrangement direction of the pixels in the pixel row (the longitudinal direction in the figure). The specific circuit structure of the pixel 30 and the details of the pixel structure will be described later.
於像素陣列部21中,對於矩陣狀之像素排列,就每一像素列沿列方向配線像素驅動線LD,且就每一像素行沿行方向配線垂直信號線VSL。像素驅動線LD傳送用於進行自像素讀出信號時之驅動之驅動信號。於圖2中,像素驅動線LD顯示為1條1條之配線,但不限定於1條1條。像素驅動線LD之一端連接於與垂直驅動電路22之各列對應之輸出端。In the pixel array section 21, for a matrix-like pixel arrangement, the pixel driving lines LD are wired along the column direction for each pixel column, and the vertical signal lines VSL are wired along the row direction for each pixel row. The pixel driving line LD transmits a driving signal for driving when reading a signal from the pixel. In FIG. 2 , the pixel driving lines LD are shown as one wiring line, but are not limited to one wiring line. One end of the pixel driving line LD is connected to an output terminal corresponding to each column of the vertical driving circuit 22 .
垂直驅動電路22由移位暫存器及位址解碼器等構成,所有像素同時或以列單位等驅動像素陣列部21之各像素。亦即,垂直驅動電路22與控制該垂直驅動電路22之系統控制部25一起構成控制像素陣列部21之各像素之動作之驅動部。該垂直驅動電路22針對其具體的構成省略圖示,但一般而言,具備讀出掃描系統及排除掃描系統之2個掃描系統。The vertical driving circuit 22 is composed of a shift register, an address decoder, etc., and all pixels drive each pixel of the pixel array portion 21 simultaneously or in column units. That is, the vertical driving circuit 22 and the system control unit 25 that controls the vertical driving circuit 22 together form a driving unit that controls the operation of each pixel of the pixel array unit 21 . Although the specific structure of the vertical drive circuit 22 is not shown in the figure, generally speaking, it has two scanning systems: a read scanning system and an exclusion scanning system.
讀出掃描系統為了自像素30讀出信號,而以列單位依序選擇掃描像素陣列部21之像素30。自像素30讀出之信號為類比信號。排除掃描系統對於由讀出掃描系統進行讀出掃描之讀出列,較該讀出掃描提前曝光時間份額進行排除掃描。In order to read signals from the pixels 30 , the readout scanning system sequentially selects and scans the pixels 30 of the pixel array portion 21 in column units. The signal read from the pixel 30 is an analog signal. The exclusion scanning system performs exclusion scanning on the readout column that is readout by the readout scanning system by an exposure time portion earlier than the readout scan.
藉由該排除掃描系統所進行之排除掃描,自讀出列之像素30之光電轉換元件排除不必要之電荷,藉此將該光電轉換元件重置。而且,藉由以該排除掃描系統排除(重置)不必要之電荷,而進行所謂之電子快門動作。此處,電子快門動作意指捨棄電轉換元件之光電荷,並重新開始曝光(亦即,開始電荷之蓄積)之動作。Through the elimination scanning performed by the elimination scanning system, unnecessary charges are eliminated from the photoelectric conversion elements of the pixels 30 in the readout row, thereby resetting the photoelectric conversion elements. Furthermore, by eliminating (resetting) unnecessary charges with the elimination scanning system, a so-called electronic shutter operation is performed. Here, the electronic shutter operation means an operation of discarding the photocharge of the electrical conversion element and restarting the exposure (that is, starting the accumulation of electric charge).
藉由讀出掃描系統所進行之讀出動作而讀出之信號對應於在緊接其前之讀出動作或電子快門動作以後接收到之光量。而且,自緊接在前之讀出動作之讀出時序或電子快門動作之排除時序至此次之讀出動作之讀出時序之期間成為像素30之電荷之蓄積期間(亦稱為曝光期間)。The signal read out by the readout operation performed by the readout scanning system corresponds to the amount of light received after the immediately preceding readout operation or the electronic shutter operation. Furthermore, the period from the readout timing of the immediately preceding readout operation or the exclusion timing of the electronic shutter operation to the readout timing of the current readout operation becomes the charge accumulation period of the pixel 30 (also referred to as the exposure period).
從由垂直驅動電路22選擇掃描之像素列之各像素30輸出之信號就每一像素列經由垂直信號線VSL各者被輸入至行處理電路23。行處理電路23就像素陣列部21之每一像素行,對自選擇列之各像素經由垂直信號線VSL輸出之信號進行特定信號處理,且暫時保持信號處理後之像素信號。The signal output from each pixel 30 of the pixel column selected for scanning by the vertical drive circuit 22 is input to the row processing circuit 23 via the vertical signal line VSL for each pixel column. The row processing circuit 23 performs specific signal processing on the signal output from each pixel in the selected column through the vertical signal line VSL for each pixel row of the pixel array section 21, and temporarily retains the signal-processed pixel signal.
具體而言,行處理電路23作為信號處理,至少進行雜訊除去處理、例如CDS(Correlated Double Sampling:相關雙取樣)處理、或DDS(Double Data Sampling,雙倍資料取樣)處理。例如,藉由CDS去除處理,去除重置雜訊及像素內之放大電晶體之臨限值偏差等像素固有之固定模式雜訊。行處理電路23除此以外亦具有例如AD(類比-數位)轉換功能,將可自光電轉換元件讀出之類比之像素信號轉換為數位信號並輸出。Specifically, the line processing circuit 23 performs at least noise removal processing such as CDS (Correlated Double Sampling) processing or DDS (Double Data Sampling) processing as signal processing. For example, CDS removal processing is used to remove fixed pattern noise inherent to the pixel, such as reset noise and threshold value deviations of the amplification transistors in the pixel. In addition, the row processing circuit 23 also has, for example, an AD (analog-to-digital) conversion function to convert an analog pixel signal that can be read from a photoelectric conversion element into a digital signal and output it.
水平驅動電路24由移位暫存器及位址解碼器等構成,依序選擇與行處理電路23之像素行對應之讀出電路(以下亦稱為像素電路)。藉由該水平驅動電路24所進行之選擇掃描,依序輸出於行處理電路23中就每一像素電路予以信號處理之像素信號。The horizontal driving circuit 24 is composed of a shift register, an address decoder, etc., and sequentially selects the readout circuit (hereinafter also referred to as a pixel circuit) corresponding to the pixel row of the row processing circuit 23. Through the selective scanning performed by the horizontal driving circuit 24, the pixel signals processed by each pixel circuit in the row processing circuit 23 are sequentially output.
系統控制部25由產生各種時序信號之時序產生器等構成,基於由該時序產生器產生之各種時序,進行垂直驅動電路22、行處理電路23、及水平驅動電路24等之驅動控制。The system control unit 25 is composed of a timing generator that generates various timing signals, and performs drive control of the vertical drive circuit 22 , the row processing circuit 23 , the horizontal drive circuit 24 , etc. based on the various timings generated by the timing generator.
信號處理部26至少具有運算處理功能,對於自行處理電路23輸出之像素信號進行運算處理等各種信號處理。資料儲存部27於信號處理部26中之信號處理之際暫時儲存該處理所需之資料。The signal processing unit 26 at least has an arithmetic processing function, and performs various signal processing such as arithmetic processing on the pixel signal output from the self-processing circuit 23 . The data storage unit 27 temporarily stores data required for signal processing in the signal processing unit 26 .
此外,自信號處理部26輸出之圖像資料例如可於搭載影像感測器10之攝像裝置1之處理器13等中執行特定處理,或經由特定網路向外部發送。In addition, the image data output from the signal processing unit 26 may, for example, perform specific processing in the processor 13 of the camera device 1 equipped with the image sensor 10 or the like, or may be sent to the outside via a specific network.
1.3 像素之構成例 圖3係顯示本實施形態之像素之概略構成例之電路圖。如圖3所示,像素30例如具備光電轉換部PD、傳送電晶體31、浮動擴散區域FD、重置電晶體32、放大電晶體33及選擇電晶體34。 1.3 Example of pixel composition FIG. 3 is a circuit diagram showing an example of a schematic configuration of a pixel in this embodiment. As shown in FIG. 3 , the pixel 30 includes, for example, a photoelectric conversion part PD, a transfer transistor 31 , a floating diffusion region FD, a reset transistor 32 , an amplification transistor 33 and a selection transistor 34 .
於本說明中,亦將重置電晶體32、放大電晶體33及選擇電晶體34總稱為像素電路。於該像素電路中可包含浮動擴散區域FD與傳送電晶體31中之至少1者。In this description, the reset transistor 32, the amplification transistor 33 and the selection transistor 34 are also collectively referred to as a pixel circuit. The pixel circuit may include at least one of the floating diffusion region FD and the transfer transistor 31 .
光電轉換部PD將入射之光進行光電轉換。傳送電晶體31傳送在光電轉換部PD產生之電荷。浮動擴散區域FD蓄積傳送電晶體31傳送之電荷。放大電晶體33使與蓄積於浮動擴散區域FD之電荷相應之電壓之像素信號出現於垂直信號線VSL。重置電晶體32適宜放出蓄積於浮動擴散區域FD及光電轉換部PD之電荷。選擇電晶體34選擇讀出對象之像素30。The photoelectric conversion part PD photoelectrically converts the incident light. The transfer transistor 31 transfers charges generated in the photoelectric conversion part PD. The floating diffusion region FD accumulates charges transferred by the transfer transistor 31 . The amplifying transistor 33 causes a pixel signal of a voltage corresponding to the charge accumulated in the floating diffusion region FD to appear on the vertical signal line VSL. The reset transistor 32 is suitable for discharging the charges accumulated in the floating diffusion region FD and the photoelectric conversion part PD. The selection transistor 34 selects the pixel 30 to be read out.
光電轉換部PD之陽極接地,陰極連接於傳送電晶體31之源極。傳送電晶體31之汲極麗娜姐與重置電晶體32之源極及放大電晶體33之閘極,該連接節點構成浮動擴散區域FD。The anode of the photoelectric conversion part PD is grounded, and the cathode is connected to the source of the transfer transistor 31 . The connection node between the drain electrode of the transfer transistor 31 and the source electrode of the reset transistor 32 and the gate electrode of the amplification transistor 33 form a floating diffusion region FD.
重置電晶體32連接於浮動擴散區域FD與垂直重置輸入線VRD之間。重置電晶體32之汲極連接於垂直重置輸入線VRD,放大電晶體33之源極連接於垂直電流供給線VCOM。放大電晶體33之汲極連接於選擇電晶體34之源極。選擇電晶體34之汲極連接於垂直信號線VSL。The reset transistor 32 is connected between the floating diffusion region FD and the vertical reset input line VRD. The drain of the reset transistor 32 is connected to the vertical reset input line VRD, and the source of the amplifying transistor 33 is connected to the vertical current supply line VCOM. The drain of the amplification transistor 33 is connected to the source of the selection transistor 34 . The drain of the selection transistor 34 is connected to the vertical signal line VSL.
傳送電晶體31之閘極經由傳送電晶體驅動線LD31、重置電晶體32之閘極經由重置電晶體驅動線LD32、及選擇電晶體34之閘極經由選擇電晶體驅動線LD34,分別連接於垂直驅動電路22,分別被供給作為驅動信號之脈衝信號。The gate of the transmission transistor 31 is connected via the transmission transistor drive line LD31, the gate of the reset transistor 32 is via the reset transistor drive line LD32, and the gate of the selection transistor 34 is connected via the selection transistor drive line LD34. Pulse signals as drive signals are supplied to the vertical drive circuits 22 respectively.
於如此之構成中,浮動擴散區域FD構成之電容之電位係由蓄積於其之電荷與浮動擴散區域FD之電容決定。浮動擴散區域FD之電容除了對接地電容以外,亦由傳送電晶體31之汲極之擴散層電容、重置電晶體32之源極擴散層電容、放大電晶體33之閘極電容等決定。In such a structure, the potential of the capacitor formed by the floating diffusion region FD is determined by the electric charge accumulated therein and the capacitance of the floating diffusion region FD. In addition to the ground capacitance, the capacitance of the floating diffusion region FD is also determined by the diffusion layer capacitance of the drain of the transfer transistor 31 , the source diffusion layer capacitance of the reset transistor 32 , the gate capacitance of the amplification transistor 33 , etc.
1.3.1 具備FD共有構造之像素之構成例 圖4係顯示具備本實施形態之FD(Floating Diffusion,浮動擴散)共有構造之像素之概略構成例之電路圖。如圖4所示,像素30A在與在上述中使用圖3所說明之像素30同樣之構成中,具備於1個浮動擴散區域FD分別經由個別之傳送電晶體31-1-31-4連接有複數個(於本例中為4個)光電轉換部PD1-PD4之構造。此外,於浮動擴散區域FD連接有於共有該浮動擴散區域FD之像素30A共有之像素電路。 1.3.1 Example of pixel configuration with FD common structure FIG. 4 is a circuit diagram showing an example of the schematic configuration of a pixel having a common structure of FD (Floating Diffusion) in this embodiment. As shown in FIG. 4 , the pixel 30A has the same structure as the pixel 30 described above using FIG. 3 . It is provided with one floating diffusion region FD and is connected to each other through respective transfer transistors 31 - 1 - 31 - 4 . The structure of a plurality of (four in this example) photoelectric conversion parts PD1 to PD4. In addition, a pixel circuit common to the pixels 30A sharing the floating diffusion area FD is connected to the floating diffusion area FD.
於如此之構成中,傳送電晶體31L及31R分別於閘極連接不同之傳送電晶體驅動線LD31L及LD31R,構成為分別被獨立地驅動。In such a configuration, the transfer transistors 31L and 31R are respectively connected to different transfer transistor driving lines LD31L and LD31R at their gates, and are configured to be driven independently.
1.4 單位像素之基本功能例 其次,說明像素30之基本功能。重置電晶體32依照自垂直驅動電路22供給之重置信號RST,將蓄積於浮動擴散區域FD之電荷之排出導通/關斷。此時,藉由將傳送電晶體31設為導通狀態,亦可將蓄積於光電轉換部PD之電荷排出。 1.4 Basic function example of unit pixel Next, the basic functions of the pixel 30 are explained. The reset transistor 32 turns on/off the discharge of electric charge accumulated in the floating diffusion region FD in accordance with the reset signal RST supplied from the vertical drive circuit 22 . At this time, by turning on the transfer transistor 31, the charge accumulated in the photoelectric conversion part PD can also be discharged.
於在重置電晶體32之閘極輸入高位準之重置信號RST時,將浮動擴散區域FD箝位為經由垂直重置輸入線VRD施加之電壓。藉此,將蓄積於浮動擴散區域FD之電荷排出(重置)。此時,藉由在傳送電晶體31之閘極輸入高位準之傳送信號TRG,而亦將蓄積於光電轉換部PD之電荷排出(重置)。When a high-level reset signal RST is input to the gate of the reset transistor 32 , the floating diffusion region FD is clamped to the voltage applied through the vertical reset input line VRD. Thereby, the charges accumulated in the floating diffusion region FD are discharged (reset). At this time, by inputting the high-level transmission signal TRG to the gate of the transmission transistor 31, the charge accumulated in the photoelectric conversion part PD is also discharged (reset).
此外,於在重置電晶體32之閘極輸入低位準之重置信號RST時,浮動擴散區域FD自垂直重置輸入線VRD電性切斷,成為浮動狀態。In addition, when a low-level reset signal RST is input to the gate of the reset transistor 32 , the floating diffusion region FD is electrically disconnected from the vertical reset input line VRD and becomes a floating state.
光電轉換部PD將入射光進行光電轉換,並產生與該光量相應之電荷。產生之電荷蓄積於光電轉換部PD之陰極側。傳送電晶體31依照自垂直驅動電路22供給之傳送控制信號TRG,將自光電轉換部PD向浮動擴散區域FD之電荷之傳送導通/關斷。例如,於在傳送電晶體31之閘極輸入高位準之傳送控制信號TRG時,將蓄積於光電轉換部PD之電荷傳送至浮動擴散區域FD。另一方面,於對傳送電晶體31之閘極供給低位準之傳送控制信號TRG時,自光電轉換部PD之電荷之傳送停止。此外,傳送電晶體31於停止電荷向浮動擴散區域FD之傳送之期間,光電轉換而成之電荷蓄積於光電轉換部PD。The photoelectric conversion part PD photoelectrically converts incident light and generates charges corresponding to the amount of light. The generated charge is accumulated on the cathode side of the photoelectric conversion part PD. The transfer transistor 31 turns on/off the transfer of charges from the photoelectric conversion part PD to the floating diffusion region FD in accordance with the transfer control signal TRG supplied from the vertical drive circuit 22 . For example, when a high-level transfer control signal TRG is input to the gate of the transfer transistor 31, the charges accumulated in the photoelectric conversion part PD are transferred to the floating diffusion region FD. On the other hand, when the low-level transfer control signal TRG is supplied to the gate of the transfer transistor 31, the transfer of charges from the photoelectric conversion part PD is stopped. In addition, while the transfer transistor 31 stops the transfer of charges to the floating diffusion region FD, the charges resulting from photoelectric conversion are accumulated in the photoelectric conversion part PD.
浮動擴散區域FD具有蓄積自光電轉換部PD經由傳送電晶體31傳送而來之電荷並轉換成電壓之功能。因此,於重置電晶體32關斷之浮動狀態下,浮動擴散區域FD之電位相應於各自蓄積之電荷量被調變。The floating diffusion region FD has a function of accumulating charges transferred from the photoelectric conversion part PD via the transfer transistor 31 and converting them into voltages. Therefore, in the floating state in which the reset transistor 32 is turned off, the potential of the floating diffusion region FD is modulated corresponding to the amount of charge accumulated therein.
放大電晶體33作為將連接於其閘極之浮動擴散區域FD之電位變動設為輸入信號之放大器發揮功能,該輸出電壓信號經由選擇電晶體34作為像素信號輸出至垂直信號線VSL。The amplification transistor 33 functions as an amplifier that uses the potential change of the floating diffusion region FD connected to its gate as an input signal, and the output voltage signal is output to the vertical signal line VSL as a pixel signal via the selection transistor 34 .
選擇電晶體34依照自垂直驅動電路22供給之選擇控制信號SEL,將來自放大電晶體33之電壓信號向垂直信號線VSL之輸出導通/關斷。例如,於在選擇電晶體34之閘極輸入高位準之選擇控制信號SEL時,將來自放大電晶體33之電壓信號輸出至垂直信號線VSL,於輸入低位準之選擇控制信號SEL時,停止電壓信號向垂直信號線VSL之輸出。藉此,於連接有複數個像素之垂直信號線VSL中,可僅取出選擇之像素30之輸出。The selection transistor 34 turns on/off the voltage signal from the amplification transistor 33 to the output of the vertical signal line VSL in accordance with the selection control signal SEL supplied from the vertical drive circuit 22 . For example, when a high-level selection control signal SEL is input to the gate of the selection transistor 34, the voltage signal from the amplification transistor 33 is output to the vertical signal line VSL. When a low-level selection control signal SEL is input, the voltage signal is stopped. The signal is output to the vertical signal line VSL. Thereby, in the vertical signal line VSL connected to a plurality of pixels, only the output of the selected pixel 30 can be taken out.
如此,像素30依照自垂直驅動電路22供給之傳送控制信號TRG、重置信號RST、切換控制信號FDG、及選擇控制信號SEL而驅動。In this way, the pixel 30 is driven according to the transfer control signal TRG, the reset signal RST, the switching control signal FDG, and the selection control signal SEL supplied from the vertical driving circuit 22 .
1.5 影像感測器之積層構造例 圖5係顯示本實施形態之影像感測器之積層構造例之圖。如圖5所示,影像感測器10具備由受光晶片41與電路晶片42上下積層而成之構造。受光晶片41具備由受光晶片41與電路晶片42積層而成之構造。受光晶片41例如係具備由光電轉換部PD排列而成之像素陣列部21之半導體晶片,電路晶片42例如係由像素電路排列而成之半導體晶片。 1.5 Example of multilayer structure of image sensor FIG. 5 is a diagram showing an example of a multilayer structure of the image sensor according to this embodiment. As shown in FIG. 5 , the image sensor 10 has a structure in which a light-receiving chip 41 and a circuit chip 42 are stacked up and down. The light-receiving wafer 41 has a structure in which the light-receiving wafer 41 and the circuit chip 42 are laminated. The light-receiving wafer 41 is, for example, a semiconductor chip including the pixel array portion 21 in which the photoelectric conversion portions PD are arranged. The circuit chip 42 is, for example, a semiconductor wafer in which pixel circuits are arranged.
針對受光晶片41與電路晶片42之接合,例如可利用將各者之接合面平坦化並以電子間力將兩者貼合之所謂之直接接合。惟,不限定於此,例如,亦可利用將形成於相互之接合面之銅(Cu)製之電極墊彼此接合之所謂之銅-銅(Cu-Cu)接合、或其他之凸塊接合等。For the bonding of the light-receiving chip 41 and the circuit chip 42, for example, so-called direct bonding in which the bonding surfaces of the two are planarized and the two are bonded together by electron force can be used. However, it is not limited to this. For example, so-called copper-copper (Cu-Cu) bonding in which electrode pads made of copper (Cu) formed on mutual bonding surfaces are bonded to each other, or other bump bonding can also be used. .
又,受光晶片41與電路晶片42例如經由貫通半導體基板之貫通接點即TSV(Through-Silicon Via,穿矽導通體)等連接部電性連接。對於使用TSV之連接,例如可採用:將設置於受光晶片41之TSV與自受光晶片41直到電路晶片42設置之TSV之2個TSV在晶片外表連接之所謂之雙TSV方式、或以自受光晶片41貫通至電路晶片42之TSV將兩者連接之所謂之共用TSV方式等。In addition, the light-receiving chip 41 and the circuit chip 42 are electrically connected through a connection portion such as a TSV (Through-Silicon Via), which is a through contact that penetrates the semiconductor substrate. For the connection using TSV, for example, the so-called double TSV method in which the TSV provided on the light-receiving chip 41 and the TSV provided from the light-receiving chip 41 to the circuit chip 42 are connected on the surface of the chip, or the self-light-receiving chip can be used. The TSV 41 is connected to the circuit chip 42, so-called shared TSV method, etc. are used to connect the two.
惟,於對受光晶片41與電路晶片42之接合利用Cu-Cu(銅-銅)接合或凸塊接合時,經由Cu-Cu(銅-銅)接合部或凸塊接合部將兩者電性連接。However, when the light-receiving chip 41 and the circuit chip 42 are bonded using Cu-Cu (copper-copper) bonding or bump bonding, they are electrically connected through the Cu-Cu (copper-copper) bonding portion or the bump bonding portion. connection.
1.6 像素之基本構造例 其次,參照圖6,參照圖3所例示之像素30來說明第1實施形態之像素之基本構造例。此外,圖4所例示之像素30A之基本構造例亦可同樣。圖6係顯示第1實施形態之像素之基本的剖面構造例之剖視圖。此外,於圖6中顯示像素30之配置有光電轉換部PD之受光晶片41之剖面構造例。 1.6 Basic structure example of pixel Next, a basic structural example of the pixel in the first embodiment will be described with reference to FIG. 6 and the pixel 30 illustrated in FIG. 3 . In addition, the basic structural example of the pixel 30A illustrated in FIG. 4 may be the same. FIG. 6 is a cross-sectional view showing an example of the basic cross-sectional structure of the pixel in the first embodiment. In addition, an example of the cross-sectional structure of the light-receiving chip 41 provided with the photoelectric conversion part PD of the pixel 30 is shown in FIG. 6 .
如圖6所示,於影像感測器10中,光電轉換部PD接收自半導體基板58之背面(於圖中為上表面)側入射之入射光L1。於光電轉換部PD之上方設置有平坦化膜53、彩色濾光器52及晶載透鏡51,對於藉由依次經由各部而自受光面57入射至半導體基板58內之入射光L1進行光電轉換。As shown in FIG. 6 , in the image sensor 10 , the photoelectric conversion part PD receives the incident light L1 incident from the back surface (upper surface in the figure) side of the semiconductor substrate 58 . A planarizing film 53, a color filter 52, and a crystal-mounted lens 51 are provided above the photoelectric conversion part PD, and the incident light L1 incident from the light-receiving surface 57 into the semiconductor substrate 58 is photoelectrically converted by passing through each part in sequence.
對於半導體基板58,例如可使用包含含有碳(C)、矽(Si)、鍺(Ge)及錫(Sn)中之至少1種之IV族半導體之半導體基板、或包含含有硼(B)、鋁(A1)、鎵(Ga)、銦(In)、氮(N)、磷(P)、砷(As)及銻(Sb)中之至少2種之III-V族半導體之半導體基板。惟,不限定於其等,可使用各種半導體基板。For the semiconductor substrate 58, for example, a semiconductor substrate containing a Group IV semiconductor containing at least one of carbon (C), silicon (Si), germanium (Ge), and tin (Sn), or a semiconductor substrate containing boron (B), A semiconductor substrate of at least two III-V group semiconductors selected from the group consisting of aluminum (A1), gallium (Ga), indium (In), nitrogen (N), phosphorus (P), arsenic (As) and antimony (Sb). However, it is not limited to these, and various semiconductor substrates can be used.
光電轉換部PD例如可具備將N型半導體區域59形成為蓄積電荷(電子)之電荷蓄積區域之構造。於光電轉換部PD中,N型半導體區域59設置於由半導體基板58之P型半導體區域56及64包圍之區域內。於N型半導體區域59之半導體基板58之表面(下表面)側,設置有雜質濃度高於背面(上表面)側之P型半導體區域64。即,光電轉換部PD為HAD(Hole-Accumulation Diode,電動累積二極體)構造,於N型半導體區域59之上表面側與下表面側之各界面中,設置有P型半導體區域56及64,以抑制產生暗電流。For example, the photoelectric conversion part PD may have a structure in which the N-type semiconductor region 59 is formed as a charge accumulation region that accumulates charges (electrons). In the photoelectric conversion part PD, the N-type semiconductor region 59 is provided in a region surrounded by the P-type semiconductor regions 56 and 64 of the semiconductor substrate 58 . On the front surface (lower surface) side of the semiconductor substrate 58 of the N-type semiconductor region 59, a P-type semiconductor region 64 having a higher impurity concentration than the back surface (upper surface) side is provided. That is, the photoelectric conversion part PD has a HAD (Hole-Accumulation Diode) structure, and P-type semiconductor regions 56 and 64 are provided at each interface between the upper surface side and the lower surface side of the N-type semiconductor region 59 , to suppress the generation of dark current.
於半導體基板58之內部設置有將複數個像素30之間電性分離之像素分離部60,於由該像素分離部60區劃出之區域設置有光電轉換部PD。圖中,於自上表面側觀察影像感測器10之情形下,像素分離部60例如以介置於複數個像素30之間之方式設置為格子狀,光電轉換部PD配置於由該像素分離部60區劃出之區域內。A pixel separation part 60 that electrically separates the plurality of pixels 30 is provided inside the semiconductor substrate 58 , and a photoelectric conversion part PD is provided in a region defined by the pixel separation part 60 . In the figure, when the image sensor 10 is viewed from the upper surface side, the pixel separation part 60 is provided in a grid shape, for example, interposed between a plurality of pixels 30 , and the photoelectric conversion part PD is disposed in the pixel separation part 60 . Within the area designated by Section 60.
於各光電轉換部PD中,陽極接地,於影像感測器10中,光電轉換部PD蓄積之信號電荷(例如電子)經由未圖示之傳送電晶體31(參照圖3)等讀出,並作為電信號輸出至未圖示之垂直信號線VSL(參照圖3)。In each photoelectric conversion part PD, the anode is grounded. In the image sensor 10, the signal charges (for example, electrons) accumulated in the photoelectric conversion part PD are read out through the transfer transistor 31 (not shown) (see FIG. 3) and the like, and It is output as an electrical signal to a vertical signal line VSL (not shown) (see FIG. 3 ).
配線層65設置於半導體基板58中之與設置有遮光膜54、平坦化膜53、彩色濾光器52、晶載透鏡51等各部之背面(上表面)為相反側之表面(下表面)。The wiring layer 65 is provided on the surface (lower surface) of the semiconductor substrate 58 that is opposite to the back surface (upper surface) on which the light-shielding film 54 , the planarizing film 53 , the color filter 52 , the crystal-mounted lens 51 and other components are provided.
配線層65係由配線66、絕緣層67、及貫通電極(未圖示)構成。來自受光晶片41之電信號經由配線66、貫通電極(未圖示)傳送至電路晶片42。同樣,受光晶片41之基板電位亦自電路晶片42經由配線66、貫通電極(未圖示)施加。The wiring layer 65 is composed of wiring 66, an insulating layer 67, and through-electrodes (not shown). The electrical signal from the light-receiving chip 41 is transmitted to the circuit chip 42 via the wiring 66 and the through-electrode (not shown). Similarly, the substrate potential of the light-receiving chip 41 is also applied from the circuit chip 42 through the wiring 66 and the through-electrode (not shown).
於配線層65之對於設置有光電轉換部PD之側為相反側之面,例如接合圖5所例示之電路晶片42。For example, the circuit chip 42 illustrated in FIG. 5 is bonded to the surface of the wiring layer 65 that is opposite to the side where the photoelectric conversion part PD is provided.
遮光膜54設置於半導體基板58之背面(於圖中為上表面)之側,將自半導體基板58之上方往向半導體基板58之背面之入射光L1之一部分遮光。The light-shielding film 54 is provided on the back surface (upper surface in the figure) of the semiconductor substrate 58 to block part of the incident light L1 from above the semiconductor substrate 58 toward the back surface of the semiconductor substrate 58 .
遮光膜54設置於在半導體基板58之內部設置之像素分離部60之上方。此處,遮光膜54在半導體基板58之背面(上表面)上介隔著矽氧化膜等絕緣膜55以呈凸形狀突出之方式設置。對此,於設置於半導體基板58之內部之光電轉換部PD之上方,以入射光L1入射至光電轉換部PD之方式,開口而不設置遮光膜54。The light-shielding film 54 is provided above the pixel separation portion 60 provided inside the semiconductor substrate 58 . Here, the light-shielding film 54 is provided to protrude in a convex shape on the back surface (upper surface) of the semiconductor substrate 58 via an insulating film 55 such as a silicon oxide film. In contrast, the light-shielding film 54 is not provided in an opening above the photoelectric conversion portion PD provided inside the semiconductor substrate 58 so that the incident light L1 is incident on the photoelectric conversion portion PD.
即,圖中,於自上表面側觀察影像感測器10時,遮光膜54之平面形狀為格子狀,形成供入射光L1向受光面57通過之開口。That is, in the figure, when the image sensor 10 is viewed from the upper surface side, the planar shape of the light-shielding film 54 is a grid shape, forming openings for the incident light L1 to pass toward the light-receiving surface 57 .
遮光膜54係由將光遮光之遮光材料形成。例如,藉由依次積層鈦(Ti)膜與鎢(W)膜,而形成遮光膜54。此外,遮光膜54例如可藉由依次積層氮化鈦(TiN)膜與鎢(W)膜而形成。The light-shielding film 54 is formed of a light-shielding material that blocks light. For example, the light-shielding film 54 is formed by sequentially stacking a titanium (Ti) film and a tungsten (W) film. In addition, the light-shielding film 54 can be formed, for example, by sequentially stacking a titanium nitride (TiN) film and a tungsten (W) film.
遮光膜54由平坦化膜53被覆。平坦化膜53使用供光透過之絕緣材料形成。該絕緣材料例如可使用氧化矽(SiO 2)等。 The light-shielding film 54 is covered with a planarizing film 53 . The planarizing film 53 is formed using an insulating material that allows light to pass through. Examples of the insulating material include silicon oxide (SiO 2 ).
像素分離部60例如具有槽部61、固定電荷膜62、及絕緣膜63,設置為於半導體基板58之背面(上表面)之側,覆蓋將複數個像素30之間進行區劃之槽部61。The pixel separation part 60 has, for example, a groove part 61, a fixed charge film 62, and an insulating film 63. It is provided on the back surface (upper surface) side of the semiconductor substrate 58 and covers the groove part 61 that divides the plurality of pixels 30.
具體而言,固定電荷膜62設置為以一定之厚度被覆在半導體基板58中形成於背面(上表面)側之槽部61之內側之面。而且,以埋入由該固定電荷膜62被覆之槽部61之內部之方式設置(填充)絕緣膜63。Specifically, the fixed charge film 62 is provided to cover the inner surface of the groove portion 61 formed on the back surface (upper surface) side of the semiconductor substrate 58 with a certain thickness. Furthermore, the insulating film 63 is provided (filled) so as to be embedded in the groove portion 61 covered with the fixed charge film 62 .
此處,固定電荷膜62使用具有負的固定電荷之高介電體而形成,以在與半導體基板58之界面部分中形成正電荷(電洞)蓄積區域而抑制產生暗電流。藉由固定電荷膜62具有負的固定電荷,而藉由該負的固定電荷在與半導體基板58之界面施加電場,形成正電荷(電洞)蓄積區域。Here, the fixed charge film 62 is formed using a high dielectric material having a negative fixed charge to form a positive charge (hole) accumulation region in the interface portion with the semiconductor substrate 58 to suppress the generation of dark current. The fixed charge film 62 has negative fixed charges, and the negative fixed charges apply an electric field at the interface with the semiconductor substrate 58 to form a positive charge (hole) accumulation region.
固定電荷膜62例如可由鉿氧化膜(HfO 2膜)形成。又。固定電荷膜62除此以外,例如可形成為包含鉿、鋯、鋁、鉭、鈦、鎂、釔、鑭系元素等之氧化物中之至少一種。 The fixed charge film 62 may be formed of, for example, a hafnium oxide film (HfO 2 film). again. In addition, the fixed charge film 62 may be formed of at least one oxide containing, for example, hafnium, zirconium, aluminum, tantalum, titanium, magnesium, yttrium, lanthanoid series elements, or the like.
此外,像素分離部60不限定於上述構成,可進行各種變化。例如,藉由使用鎢(W)膜等反射光之反射膜取代絕緣膜63,而可將像素分離部60設為光反射構造。藉此,由於可以像素分離部60使進入光電轉換部PD內之入射光L1反射,故可增長光電轉換部PD內之入射光L1之光路長。此外,藉由將像素分離部60設為光反射構造,可降低光向相鄰像素之漏入,故而亦可進一步提高畫質及測距精度等。此外,於使用鎢(W)等金屬材料作為反射膜之材料之情形下,可於槽部61內設置矽氧化膜等絕緣膜取代固定電荷膜62。In addition, the pixel separation unit 60 is not limited to the above-mentioned configuration, and various changes are possible. For example, by using a reflective film that reflects light, such as a tungsten (W) film, instead of the insulating film 63 , the pixel separation portion 60 can be formed into a light reflective structure. Thereby, since the pixel separation part 60 can reflect the incident light L1 entering the photoelectric conversion part PD, the optical path length of the incident light L1 in the photoelectric conversion part PD can be increased. In addition, by using the pixel separation part 60 as a light reflective structure, the leakage of light to adjacent pixels can be reduced, so that the image quality, distance measurement accuracy, etc. can be further improved. In addition, when a metal material such as tungsten (W) is used as the material of the reflective film, an insulating film such as a silicon oxide film may be provided in the groove portion 61 instead of the fixed charge film 62 .
又,將像素分離部60設為光反射構造之構成不限定於使用照射膜之構成,例如,亦可藉由在槽部61內埋入較半導體基板58為高折射率或低折射率之材料來實現。In addition, the structure of forming the pixel separation part 60 into a light reflective structure is not limited to the use of an irradiation film. For example, a material having a higher refractive index or a lower refractive index than the semiconductor substrate 58 may be embedded in the groove part 61 . to achieve.
進而,於圖6中例示了於自半導體基板58之背面(上表面)側形成之槽部61內設置有像素分離部60之所謂之RDTI(Reverse Deep Trench Isolation,反向深溝渠隔離)構造之像素分離部60,但不限定於此,例如,可採用於自半導體基板58之表面(下表面)側形成之槽部內設置有像素分離部60之所謂之DTI(Deep Trench Isolation,深溝渠隔離)構造、於以貫通半導體基板58之表背面之方式形成之槽部內設置有像素分離部60之所謂之FTI(Full Trench Isolation,全溝渠隔離)構造等各種構造之像素分離部60。Furthermore, FIG. 6 illustrates a so-called RDTI (Reverse Deep Trench Isolation) structure in which a pixel isolation portion 60 is provided in a groove portion 61 formed from the back surface (upper surface) side of the semiconductor substrate 58 The pixel isolation part 60 is not limited thereto. For example, a so-called DTI (Deep Trench Isolation) in which the pixel isolation part 60 is provided in a groove formed from the surface (lower surface) side of the semiconductor substrate 58 may be used. The pixel isolation portion 60 has various structures, such as a so-called FTI (Full Trench Isolation) structure, in which the pixel isolation portion 60 is provided in a groove portion formed to penetrate the front and back of the semiconductor substrate 58 .
1.7 畫質降低之要因 其次,針對在使解析度變化時產生之畫質降低之要因,例示且說明若干個彩色濾光器排列。 1.7 Reasons for reduced image quality Next, several color filter arrangements are exemplified and explained with respect to the factors that cause image quality degradation when the resolution is changed.
圖7係顯示採用拜耳排列作為彩色濾光器排列之情形之像素配置例之俯視圖。如圖7所示,拜耳排列具備於矩陣方向規則地重複基本單元50A之構造,該基本單元50A以R:G:B=1:2:1之比率呈2×2之矩陣狀排列有:配置有主要使紅色(R)之波長成分透過之彩色濾光器52之像素30(亦將其稱為R像素30R)、配置有主要使綠色(G)之波長成分透過之彩色濾光器52之像素30(亦將其稱為G像素30G)、及配置有主要使藍色(B)之波長成分之彩色濾光器52之像素30(亦將其稱為B像素30B)。FIG. 7 is a top view showing an example of a pixel arrangement using a Bayer arrangement as a color filter arrangement. As shown in FIG. 7 , the Bayer arrangement has a structure in which basic units 50A are regularly repeated in the matrix direction. The basic units 50A are arranged in a 2×2 matrix with a ratio of R:G:B=1:2:1 and have the following configuration: A pixel 30 having a color filter 52 that mainly transmits a red (R) wavelength component (also referred to as an R pixel 30R), and a color filter 52 that mainly transmits a green (G) wavelength component. The pixel 30 (also referred to as the G pixel 30G), and the pixel 30 (also referred to as the B pixel 30B) provided with the color filter 52 that mainly emits a wavelength component of blue (B).
圖8係顯示採用四倍拜耳排列作為彩色濾光器排列之情形之平面配置例之圖。如圖8所示,四倍拜耳排列之像素陣列部21B具備於矩陣方向重複基本單元50B之構造,該基本單元50B為將拜耳排列之各像素30分割成2×2之矩陣狀排列之同色之4個像素30之構成。FIG. 8 is a diagram showing an example of a planar arrangement in a case where a quadruple Bayer arrangement is used as a color filter arrangement. As shown in FIG. 8 , the quadruple Bayer array pixel array portion 21B has a structure in which a basic unit 50B is repeated in the matrix direction. The basic unit 50B is a matrix arrangement of the same color in which each pixel 30 of the Bayer array is divided into 2×2. Composed of 4 pixels and 30.
此外,本實施形態可採用之彩色濾光器排列不限定於例示之拜耳排列及四倍拜耳排列,可採用各種彩色濾光器排列。In addition, the color filter arrangement that can be used in this embodiment is not limited to the illustrated Bayer arrangement and the quadruple Bayer arrangement, and various color filter arrangements can be used.
於採用如該等之彩色濾光器排列之先前之影像感測器中,存在當使解析度變化時畫質降低之可能性。例如,於對於彩色濾光器採用拜耳排列之情形下,以不進行合併之全像素模式進行攝像之情形之畫質高,但於因合併而低解析度化之情形下,有可能產生鋸齒等,畫質降低至解析度之降低以上。另一方面,例如,於對於彩色濾光器採用四倍拜耳排列之情形下,以低解析度讀出之情形之畫質高,但存在以全像素模式進行攝像之情形之畫質較採用拜耳排列之情形之畫質降低之可能性。In previous image sensors using color filter arrangements such as these, there was a possibility that image quality would be degraded when the resolution was changed. For example, when a Bayer arrangement is used for color filters, the image quality is high when shooting in full-pixel mode without binning, but when the resolution is reduced by binning, aliasing, etc. may occur. , the image quality is reduced beyond the resolution reduction. On the other hand, for example, when a quadruple Bayer arrangement is used for color filters, the image quality is higher when reading out at low resolution, but the image quality when imaging is performed in full-pixel mode is higher than when using Bayer. There is a possibility that the image quality will be degraded due to the arrangement.
又,於經高解析度化之影像感測器中,若以全像素模式進行讀出,則產生訊框率之低速化或消耗電力之增大等問題。為了應對如此之問題,於影像感測器中,例如,有時搭載在攝影前之監視或動畫攝影等中藉由像素加算而降低解析度並讀出之合併模式。In addition, in high-resolution image sensors, if readout is performed in full-pixel mode, problems such as a decrease in frame rate or an increase in power consumption may occur. In order to cope with such a problem, image sensors are sometimes equipped with a binning mode that reduces the resolution by adding pixels and reads it out, for example, during monitoring before photography or animation photography.
圖9係用於說明採用拜耳排列之先前之影像感測器之像素加算之圖。此處,像素加算例如存在以下制約,即:必須以同色像素相加、及為了抑制畫質降低而必須以同一基本單元50A內或相鄰之基本單元50A內之像素相加等。為此,如圖9(A)所示,於採用拜耳排列之先前之影像感測器中,一般而言,將於垂直方向(亦稱為行方向)隔著一像素排列之同色像素相加。FIG. 9 is a diagram illustrating pixel addition of a conventional image sensor using a Bayer arrangement. Here, the pixel addition has the following constraints, for example, pixels of the same color must be added, and pixels in the same basic unit 50A or adjacent basic units 50A must be added in order to suppress degradation of image quality. For this reason, as shown in Figure 9(A), in previous image sensors using the Bayer arrangement, generally speaking, pixels of the same color arranged one pixel apart in the vertical direction (also called the row direction) are added together. .
然而,於將在垂直方向隔著一像素排列之同色像素相加之情形下,如圖9(B)所示,由於讀出之像素之空間座標為相加之像素30之平均值,故於垂直方向(行方向)上在同色像素間產生間隙,於垂直方向與水平方向上同色像素之空間頻率變得不均一。其結果,於輸出圖像產生鋸齒等,產生畫質降低等不良狀況。又,於畫質因鋸齒等而降低之圖像中,亦可能產生辨識處理精度之降低等不良狀況。However, in the case where pixels of the same color arranged one pixel apart in the vertical direction are added, as shown in FIG. 9(B) , since the spatial coordinates of the read pixels are the average of the added pixels 30, Gaps are generated between pixels of the same color in the vertical direction (row direction), and the spatial frequencies of pixels of the same color become non-uniform in the vertical and horizontal directions. As a result, aliasing occurs in the output image, resulting in problems such as reduced image quality. In addition, in images whose image quality is reduced due to aliasing, etc., problems such as reduced accuracy of recognition processing may also occur.
1.8 畫質降低之抑制 為此,於本實施形態中,藉由適當配置加算之像素30之組合,而抑制加算後之像素之空間頻率變得不均一。圖10係用於說明本實施形態之加算像素之組合例之圖。如圖10(A)所示,於本實施形態中,針對R像素30R、G像素30G及B像素30B中之至少G像素30G,將在基本單元50A內相鄰地排列於斜向方向之G像素30G相加。藉此,如圖10(B)所示,由於可將自G像素30G經加算讀出之像素之空間頻率於垂直方向與水平方向設為均一,故可抑制因鋸齒等所致之畫質之降低。 1.8 Suppression of image quality degradation Therefore, in this embodiment, by appropriately arranging the combination of the added pixels 30, the spatial frequency of the added pixels is suppressed from becoming non-uniform. FIG. 10 is a diagram illustrating a combination example of added pixels in this embodiment. As shown in FIG. 10(A) , in this embodiment, at least G pixels 30G among R pixels 30R, G pixels 30G, and B pixels 30B are arranged adjacent to G in the oblique direction in the basic unit 50A. Pixel 30G adds up. Thereby, as shown in FIG. 10(B) , since the spatial frequency of the pixels added and read out from the G pixel 30G can be made uniform in the vertical and horizontal directions, it is possible to suppress deterioration in image quality due to aliasing, etc. reduce.
又,於解馬賽克或重排馬賽克之處理中,通常執行插補G像素且產生RGB之全像素之處理,但可如本實施形態般,藉由適當配置加算像素之組合,以使垂直方向與水平方向之G像素之空間頻率變得均一,而可省略如上述之處理。又,於拜耳排列中,亦可取得特性非常佳之縮小圖像。In addition, in the process of demosaic or rearrangement of mosaic, the process of interpolating G pixels and generating full RGB pixels is usually performed. However, as in this embodiment, by appropriately arranging the combination of the added pixels, the vertical direction and The spatial frequencies of G pixels in the horizontal direction become uniform, and the above-mentioned processing can be omitted. In addition, in the Bayer arrangement, a reduced image with excellent characteristics can also be obtained.
此外,於圖10中例示了2像素相加之情形,但不限定於此,於將3像素以上相加之情形下,針對R像素30R、G像素30G及B像素30B中之至少1個色成分像素,亦可調整加算像素之組合,以使垂直方向與水平方向之加算後之空間頻率為均一或大致均一。In addition, FIG. 10 illustrates the case of adding 2 pixels, but it is not limited thereto. In the case of adding 3 or more pixels, for at least one color among the R pixel 30R, the G pixel 30G and the B pixel 30B, For the component pixels, the combination of the added pixels can also be adjusted so that the added spatial frequencies in the vertical and horizontal directions are uniform or approximately uniform.
惟,為了進行像素加算,必須於相加之像素30間共有浮動擴散區域FD。例如,於如圖11所例示般,在構成排列於垂直方向之2個基本單元50A之共計8個像素30共有1個浮動擴散區域FD之情形下,可使用以圖10所例示之加算像素之組合,但於如圖12所例示般,在構成1個基本單元50A之共計4個像素30共有1個浮動擴散區域FD之情形下,則無法將於垂直方向隔著一像素排列之R像素30R與B像素30B分別作為加算像素而組合。However, in order to perform pixel addition, the floating diffusion area FD must be shared among the pixels 30 to be added. For example, as illustrated in FIG. 11 , when a total of eight pixels 30 constituting two basic units 50A arranged in the vertical direction share one floating diffusion area FD, the method of adding pixels illustrated in FIG. 10 can be used. However, as shown in the example of FIG. 12 , when a total of four pixels 30 constituting one basic unit 50A share one floating diffusion area FD, it is impossible to arrange the R pixels 30R with one pixel apart in the vertical direction. and the B pixel 30B are respectively combined as additional pixels.
為此,於本實施形態中,如圖13所例示般,構成為排列於垂直方向之3個像素30、及相對於位於該3個像素30之一端之像素30於水平方向相鄰之1個像素30之總計4個像素30(以下亦稱為L字狀排列之4個像素30),共有1個浮動擴散區域FD。於以下之說明中,亦將共有相同之1個浮動擴散區域FD之像素30之集合稱為共有單元。Therefore, in this embodiment, as illustrated in FIG. 13 , three pixels 30 are arranged in the vertical direction, and one pixel 30 adjacent to the pixel 30 located at one end of the three pixels 30 in the horizontal direction is configured. A total of four pixels 30 (hereinafter also referred to as four pixels 30 arranged in an L shape) have one floating diffusion area FD. In the following description, a set of pixels 30 sharing the same floating diffusion area FD is also called a common unit.
於如此之共有構造中,構成有:於L字狀排列之2個R像素30R及2個G像素30G共有1個浮動擴散區域FD之共有單元50ar、及於L字狀排列之2個B像素30B及2個G像素30G共有1個浮動擴散區域FD之共有單元50ab。In such a shared structure, there are two R pixels 30R and two G pixels 30G arranged in an L shape, a common unit 50ar sharing a floating diffusion area FD, and two B pixels arranged in an L shape. 30B and the two G pixels 30G share a common unit 50ab of one floating diffusion area FD.
如此,藉由排列於垂直方向之3個像素30、及相對於位於該3個像素30之一端之像素30於水平方向相鄰之1個像素30來構成共有單元50ar及50ab,而可實現於垂直方向隔著一個像素而排列之同色像素(R像素30R或B像素30B)之組合、及於斜向方向相鄰之同色像素(G像素30G)之組合,故而可進行如使用圖10所例示之加算像素之組合。In this way, by configuring the common units 50ar and 50ab by three pixels 30 arranged in the vertical direction and one pixel 30 adjacent in the horizontal direction with respect to the pixel 30 located at one end of the three pixels 30, it is possible to realize The combination of same-color pixels (R pixels 30R or B pixels 30B) arranged one pixel apart in the vertical direction, and the combination of same-color pixels (G pixels 30G) adjacent in the diagonal direction can be performed as shown in FIG. 10 The combination of added pixels.
又,如以下之式(1)所示般,浮動擴散區域FD之電容(FD電容)C FD係與構成浮動擴散區域FD之配線長(FD配線長)成比例,又,如以下之式(2)所示般,浮動擴散區域FD將電荷轉換成電壓時之轉換效率μ係與FD電容C FD成反比例。此外,於式(2)中,q為電量。 FD電容C FD FD配線長 (1) 轉換效率μ=q/C FD(2) Furthermore, as shown in the following formula (1), the capacitance (FD capacitance) C FD of the floating diffusion region FD is proportional to the wiring length (FD wiring length) constituting the floating diffusion region FD, and as shown in the following formula ( 2) As shown, the conversion efficiency μ when the floating diffusion region FD converts charges into voltage is inversely proportional to the FD capacitance C FD . In addition, in formula (2), q is the electric quantity. FD capacitor C FD FD wiring length (1) Conversion efficiency μ=q/C FD (2)
因而,越縮短FD配線長,越可提高轉換效率μ,但如圖13所例示般,藉由設為於L字狀之像素排列之內側之角部配置有浮動擴散區域FD之構造,換言之,藉由在排列於斜向方向之加算像素之間(於本例中為G像素30G之間)配置浮動擴散區域FD,而可將自浮動擴散區域FD相連至各像素30之傳送電晶體31之配線長縮短為與圖12所例示之2×2像素之通常之FD共有構造相同之程度。藉此,可維持較高之轉換效率μ,故而亦可抑制因轉換效率μ之降低所致之畫質之劣化。Therefore, the shorter the FD wiring length is, the more the conversion efficiency μ can be improved. However, as illustrated in FIG. 13 , by setting the floating diffusion region FD at the inner corner of the L-shaped pixel array, in other words, By arranging the floating diffusion region FD between the addition pixels arranged in the oblique direction (in this example, between the G pixels 30G), it is possible to connect the transfer transistor 31 from the floating diffusion region FD to each pixel 30 The wiring length is shortened to the same extent as the common FD common structure of 2×2 pixels illustrated in FIG. 12 . Thereby, a high conversion efficiency μ can be maintained, and thus the deterioration of image quality caused by a decrease in conversion efficiency μ can be suppressed.
1.9 像素排列之重排馬賽克 惟,如圖14(A)所示,於在L字狀排列之4個像素30共有浮動擴散區域FD之情形下,若使用與對於應用拜耳排列之像素陣列部21A之驅動方式同樣之驅動方式,執行圖像資料之讀出,則如圖14(B)所示般,將L字狀排列之4個像素30作為排列成2×2之拜耳排列之基本單元而讀出。 1.9 Pixel arrangement rearrangement mosaic However, as shown in FIG. 14(A) , in the case where the four pixels 30 arranged in an L shape share the floating diffusion area FD, the same driving method as that used for the pixel array portion 21A applying the Bayer arrangement is used. To read out image data, four pixels 30 arranged in an L shape are read out as the basic unit of a 2×2 Bayer array, as shown in FIG. 14(B) .
為此,於本實施形態中,可如圖14(C)所示,於讀出之圖像資料中,執行將包含2個R像素30R之共有單元50ar之#4之R像素30R、與包含2個B像素30B之共有單元50ab之#1之B像素30B替換之重排馬賽克處理。藉此,由於可將圖像資料之R像素、G像素及B像素之排列設為拜耳排列,故於後段可利用對於一般性拜耳排列之處理。To this end, in this embodiment, as shown in FIG. 14(C), in the read image data, the R pixel 30R of #4 of the shared unit 50ar including the two R pixels 30R and the Rearrangement and mosaic processing of replacing B pixel 30B of #1 of unit 50ab shared by two B pixels 30B. With this, the arrangement of the R pixels, G pixels, and B pixels of the image data can be set as a Bayer arrangement, so that the processing of the general Bayer arrangement can be used in the later stage.
圖15係顯示用於執行本實施形態之重排馬賽克處理之構成之方塊圖。如圖15所示,自像素陣列部21讀出且於行處理電路23之AD轉換電路23a中經AD轉換之RAW圖像資料就每一列輸入至重排馬賽克處理部102。此時,包含替換對象之像素之列資料於暫時儲存於列記憶體101-1、…、101-n之後,輸入至重排馬賽克處理部102。此外,列資料可為列方向之1列份額之圖像資料。FIG. 15 is a block diagram showing a structure for executing the rearrangement mosaic processing of this embodiment. As shown in FIG. 15 , the RAW image data read from the pixel array section 21 and AD-converted in the AD conversion circuit 23 a of the row processing circuit 23 is input to the rearrangement mosaic processing section 102 for each column. At this time, the column data including the pixels to be replaced are temporarily stored in the column memories 101-1, ..., 101-n, and then input to the rearrangement mosaic processing unit 102. In addition, the column data may be image data of one column in the column direction.
重排馬賽克處理部102針對不包含替換對象之像素之列資料,直接輸出。另一方面,針對包含替換對象之像素之列資料,以為正確之順序之方式自列記憶體101-1、…、101-n讀出像素值並輸出。The rearrangement mosaic processing unit 102 directly outputs the column data that does not include pixels to be replaced. On the other hand, for the column data including the pixels to be replaced, the pixel values are read from the column memories 101-1, ..., 101-n in the correct order and output.
對此,使用圖14之例進行說明。此外,為了便於說明,於RAW圖像資料中,將共有單元50ar之包含#1及#2之像素值之列資料設為第1列資料,將共有單元50ar之包含#3及#4之像素值之列資料設為第2列資料,將共有單元50ab之包含#1及#2之像素值之列資料設為第3列資料,將共有單元50ab之包含#3及#4之像素值之列資料設為第1列資料。This is explained using the example of Figure 14 . In addition, for the convenience of explanation, in the RAW image data, the column data containing the pixel values of #1 and #2 in the common unit 50ar is set as the first column data, and the pixels containing #3 and #4 in the common unit 50ar are The value column data is set as the 2nd column data, the column data containing the pixel values of #1 and #2 in the shared unit 50ab is set as the 3rd column data, and the column data containing the pixel values #3 and #4 in the shared unit 50ab is set The column data is set to column 1 data.
於圖14中,例示在RAW圖像資料中,將應位於基本單元50A之右下方之B像素30B(#1)替換為應位於對於該基本單元50A位於垂直方向下側之基本單元50A之左上方之R像素30R(#4)之情形,換言之第2列資料之#4之R像素、與第3列資料之#1之B像素替換之情形(參照圖14(B))。In FIG. 14 , for example, in the RAW image data, the B pixel 30B (#1) that should be located at the lower right of the basic unit 50A is replaced with the upper left of the basic unit 50A that is located on the lower side in the vertical direction with respect to the basic unit 50A. The case of the square R pixel 30R (#4), in other words, the case where the R pixel #4 of the second column data is replaced with the B pixel #1 of the third column data (see FIG. 14(B) ).
於圖14所示之例之情形下,首先,自像素陣列部21A讀出且經AD轉換之第1列資料經由重排馬賽克處理部102直至輸出。其次,包含替換對象之像素之第2列資料暫時儲存於列記憶體101-1,相同地包含替換對象之像素之第3列資料暫時儲存於列記憶體101-2。如是,重排馬賽克處理部102自儲存於列記憶體101-1及101-2之第2列資料及第3列資料,以為正確之像素順序之方式讀出2列份額之列資料,並依次輸出讀出之列資料。而後,重排馬賽克處理部102直接輸出後續輸入之第4列資料。藉此,可將輸出圖像資料之像素排列設為正確之拜耳排列。In the case of the example shown in FIG. 14 , first, the data in the first column read from the pixel array unit 21A and AD-converted pass through the rearrangement mosaic processing unit 102 until output. Next, the second column data including the pixels to be replaced is temporarily stored in the column memory 101-1, and similarly the third column data including the pixels to be replaced is temporarily stored in the column memory 101-2. If so, the rearrangement mosaic processing unit 102 reads out the column data of the two columns in the correct pixel order from the second column data and the third column data stored in the column memories 101-1 and 101-2, and sequentially Output the read column data. Then, the rearrangement mosaic processing unit 102 directly outputs the subsequently input data in the fourth column. By this, the pixel arrangement of the output image data can be set to the correct Bayer arrangement.
此外,該重排馬賽克處理例如可於行處理電路23內執行,亦可於信號處理部26內執行,還可於影像感測器10外之例如處理器13內執行。惟,於以自像素陣列部21A讀出之圖像資料之像素排列為通常之拜耳排列之方式驅動像素陣列部21A之情形下,可省略上述之重排馬賽克處理。In addition, the remosaic processing can be executed in the row processing circuit 23, the signal processing unit 26, or outside the image sensor 10, such as the processor 13. However, when the pixel array portion 21A is driven so that the pixel arrangement of the image data read out from the pixel array portion 21A is a normal Bayer arrangement, the above-mentioned rearrangement mosaic processing can be omitted.
1.10 像素間特性差之修正 如圖13所例示般,於在L字狀之像素排列之內側之角部配置有浮動擴散區域FD之情形下,針對4個像素30中之1個像素(例如共有單元50ar之左下方之R像素30R),與浮動擴散區域FD相隔之距離和與其他像素30相隔之距離不同。因而,即便為相同之共有單元50ar或50ab中所含之同色之像素30,亦有可能於像素間產生特性差。為此,於本實施形態中,可安裝修正如以上般產生之同色像素間之特性差之處理。 1.10 Correction of characteristic differences between pixels As illustrated in FIG. 13 , when the floating diffusion area FD is arranged at the inner corner of the L-shaped pixel array, for one pixel among the four pixels 30 (for example, the R in the lower left corner of the common unit 50ar The distance between the pixel 30R) and the floating diffusion area FD is different from the distance between the pixel 30R and the other pixels 30 . Therefore, even if the pixels 30 of the same color are included in the same shared unit 50ar or 50ab, differences in characteristics may occur between the pixels. Therefore, in this embodiment, a process for correcting the characteristic difference between pixels of the same color generated in the above manner can be implemented.
對於同色像素間之特性差之修正處理,考量像修正素間之感度差之處理、及修正因來自周圍像素之影響所致之混色差之處理等。以下,使用圖16說明修正處理之例。此外,為了明確化,於使用圖16之說明中,將R像素30R稱為像素R 0、R 1,將G像素30G稱為像素G 0、G 1,將B像素30B稱為像素B 0、B 1。 For the correction process of the characteristic difference between pixels of the same color, consider the process of correcting the sensitivity difference between pixels, and the process of correcting the color mixing difference caused by the influence from surrounding pixels, etc. Hereinafter, an example of the correction process will be described using FIG. 16 . In addition, for the sake of clarity, in the description using FIG. 16 , the R pixel 30R is called pixels R 0 and R 1 , the G pixel 30G is called pixels G 0 and G 1 , and the B pixel 30B is called pixels B 0 and B 0 . B1 .
修正像素間之感度差之處理例如可為將同色且不同相位之像素30之像素值乘以增益來修正之處理。例如,可針對像素R 0,將自該像素R 0讀出之像素值(RAW資料)設為R 0,將修正後之像素值R 0設為R 0’,將對於像素值R 0之修正增益係數設為g R0,針對像素R 1,將自該像素R 1讀出之像素值(RAW資料)設為R 1,將修正後之像素值R 1設為R 1’,將對於像素值R 1之修正增益係數設為g R1,執行如以下之式(3)及式(4)所示之修正處理。此外,該修正處理對於像素B 0、B 1、G 0、G 1亦可為同樣。 The process of correcting the sensitivity difference between pixels may be, for example, a process of correcting the pixel values of the pixels 30 of the same color and different phases by multiplying them by a gain. For example, for the pixel R 0 , the pixel value (RAW data) read from the pixel R 0 can be set to R 0 , the corrected pixel value R 0 can be set to R 0 ', and the correction to the pixel value R 0 can be set to R 0 . The gain coefficient is set to g R0 . For pixel R 1 , the pixel value (RAW data) read from the pixel R 1 is set to R 1 . The corrected pixel value R 1 is set to R 1 '. For the pixel value The correction gain coefficient of R 1 is set to g R1 , and the correction processing shown in the following equations (3) and (4) is performed. In addition, this correction process may be the same for pixels B 0 , B 1 , G 0 , and G 1 .
修正因來自周圍像素之影響所致之混色差之處理例如可為利用周邊之像素30之像素值進行修正之處理。例如,可將自像素G 0讀出之像素值(RAW資料)設為G 0,將修正後之像素值G 0設為G 0’,將自像素G 1讀出之像素值(RAW資料)設為G 1,將修正後之像素值G 1設為G 1’,將像素G 0與像素R 0之間之混色修正係數設為C G0R0,將像素G 0與像素B 1之間之混色修正係數設為C G0B1,將像素G 1與像素R 0之間之混色修正係數設為C G1R0,將像素G 1與像素B 0之間之混色修正係數設為C G1B0,執行如以下之式(5)及式(6)所示之修正處理。 The process of correcting the color mixture difference caused by the influence from surrounding pixels may be, for example, a process of correcting using the pixel values of the surrounding pixels 30 . For example, the pixel value (RAW data) read from the pixel G 0 can be set to G 0 , the corrected pixel value G 0 can be set to G 0 ', and the pixel value (RAW data) read from the pixel G 1 can be set to G 0 . Set as G 1 , set the corrected pixel value G 1 as G 1 ', set the color mixing correction coefficient between pixel G 0 and pixel R 0 as C G0R0 , set the color mixing between pixel G 0 and pixel B 1 Set the correction coefficient to C G0B1 , set the color mixing correction coefficient between pixel G 1 and pixel R 0 to C G1R0 , and set the color mixing correction coefficient between pixel G 1 and pixel B 0 to C G1B0 . The execution is as follows: (5) and the correction processing shown in equation (6).
藉由執行如以上之修正處理,而可降低同色像素間之特性差,故而可進一步抑制畫質之降低。此外,該修正處理可由行處理電路23執行,亦可由信號處理部26執行。By performing the above correction process, the characteristic difference between pixels of the same color can be reduced, so that the degradation of image quality can be further suppressed. In addition, this correction process may be performed by the row processing circuit 23 or the signal processing unit 26 .
1.11 對於全域快門方式之應用 於上述中,作為影像感測器10之驅動方式,例示可就水平方向之每一列讀出像素值(列資料)之所謂之滾動快門方式,但不限定於此,例如,可採用將所有像素30同時驅動之所謂之全域快門方式。 1.11 Application of global shutter method In the above, as an example of the driving method of the image sensor 10, the so-called rolling shutter method can be used to read pixel values (column data) for each column in the horizontal direction. However, it is not limited to this. For example, all pixels can be used. 30 simultaneous drives of the so-called global shutter method.
圖17係顯示採用作為全域快門方式之一之VDGS(電壓域型全域快門)方式之像素100之概略構成例之電路圖。如圖3所示,像素100具備:前段電路110、電容元件121及122、選擇電路130、後段重置電晶體141、及後段電路150。於該構成中,後段重置電晶體141及後段電路150可於複數個像素100中共有。FIG. 17 is a circuit diagram showing an example of the schematic configuration of a pixel 100 using the VDGS (Voltage Domain Global Shutter) method, which is one of the global shutter methods. As shown in FIG. 3 , the pixel 100 includes a front-end circuit 110 , capacitive elements 121 and 122 , a selection circuit 130 , a back-end reset transistor 141 , and a back-end circuit 150 . In this structure, the rear-end reset transistor 141 and the rear-end circuit 150 can be shared among a plurality of pixels 100 .
前段電路110具備:光電轉換部PD、傳送電晶體112、FD(Floating Diffusion,浮動擴散)重置電晶體113、浮動擴散區域FD、前段放大電晶體115及電流源電晶體116。The front-stage circuit 110 includes a photoelectric conversion part PD, a transfer transistor 112, an FD (Floating Diffusion, floating diffusion) reset transistor 113, a floating diffusion region FD, a front-stage amplification transistor 115, and a current source transistor 116.
光電轉換部PD係藉由光電轉換而產生電荷者。傳送電晶體112依照來自垂直掃描電路211之傳送信號trg,自光電轉換部PD向浮動擴散區域FD傳播電荷者。The photoelectric conversion part PD generates electric charges through photoelectric conversion. The transfer transistor 112 transfers charges from the photoelectric conversion part PD to the floating diffusion region FD in accordance with the transfer signal trg from the vertical scanning circuit 211.
FD重置電晶體113係依照來自垂直掃描電路211之FD重置信號rst,自浮動擴散區域FD抽除電荷而初始化者。浮動擴散區域FD係蓄積電荷並產生與電荷量相應之電壓者。前段放大電晶體115係將浮動擴散區域FD之電壓之位準放大並輸出至前段節點120者。The FD reset transistor 113 is initialized by extracting charges from the floating diffusion region FD according to the FD reset signal rst from the vertical scanning circuit 211 . The floating diffusion region FD accumulates electric charges and generates a voltage corresponding to the amount of electric charges. The front-stage amplifying transistor 115 amplifies the voltage level of the floating diffusion region FD and outputs it to the front-stage node 120 .
又,FD重置電晶體113及前段放大電晶體115之源極連接於電源電壓VDD。電流源電晶體116連接於前段放大電晶體115之汲極。該電流源電晶體116依照垂直掃描電路211之控制而供給電流id1。In addition, the sources of the FD reset transistor 113 and the front-stage amplification transistor 115 are connected to the power supply voltage VDD. The current source transistor 116 is connected to the drain of the front-stage amplification transistor 115 . The current source transistor 116 supplies the current id1 according to the control of the vertical scanning circuit 211 .
電容元件121及122各者之一端共通地連接於前段節點120,各者之另一端連接於選擇電路130。One end of each of the capacitive elements 121 and 122 is commonly connected to the previous node 120 , and the other end of each is connected to the selection circuit 130 .
選擇電路130具備選擇電晶體131及選擇電晶體132。選擇電晶體131係依照來自垂直掃描電路211之選擇信號ϕr,將電容元件121與後段節點140之間之路徑開閉者。選擇電晶體132係依照來自垂直掃描電路211之選擇信號ϕs,將電容元件122與後段節點140之間之路徑開閉者。The selection circuit 130 includes a selection transistor 131 and a selection transistor 132 . The selection transistor 131 switches the path between the capacitive element 121 and the subsequent node 140 in accordance with the selection signal ϕr from the vertical scanning circuit 211. The selection transistor 132 switches the path between the capacitive element 122 and the subsequent node 140 according to the selection signal ϕs from the vertical scanning circuit 211.
後段重置電晶體141係依照來自垂直掃描電路211之後段重置信號rstb,將後段節點140之位準初始化為特定之電位Vreg者。對於電位Vreg,設定與電源電位VDD不同之電位(例如,較VDD為低之電位)。The rear-stage reset transistor 141 initializes the level of the rear-stage node 140 to a specific potential Vreg according to the rear-stage reset signal rstb from the vertical scanning circuit 211. As for the potential Vreg, a potential different from the power supply potential VDD is set (for example, a potential lower than VDD).
後段電路150具備後段放大電晶體151及後段選擇電晶體152。後段放大電晶體151係將後段節點140之位準放大者。後段選擇電晶體152係依照來自垂直掃描電路211之後段選擇信號selb,將由後段放大電晶體151放大之位準之信號作為像素信號輸出至垂直信號線VSL者。The rear-stage circuit 150 includes a rear-stage amplification transistor 151 and a rear-stage selection transistor 152 . The rear-stage amplification transistor 151 amplifies the level of the rear-stage node 140 . The rear-stage selection transistor 152 outputs a signal of a level amplified by the rear-stage amplification transistor 151 as a pixel signal to the vertical signal line VSL according to the rear-stage selection signal selb from the vertical scanning circuit 211.
此外,使用例如nMOS(n-channel Metal Oxide Semiconductor,n通道金屬氧化物半導體)電晶體,作為像素100內之各種電晶體(傳送電晶體112等)。In addition, nMOS (n-channel Metal Oxide Semiconductor, n-channel metal oxide semiconductor) transistors, for example, are used as various transistors (transfer transistor 112 and so on) in the pixel 100 .
垂直掃描電路211於曝光開始時向所有像素供給高位準之FD重置信號rst及傳送信號trg。藉此,將光電轉換部PD初始化。以下,將該控制稱為「PD重置」。The vertical scanning circuit 211 supplies the high-level FD reset signal rst and the transmission signal trg to all pixels at the beginning of exposure. Thereby, the photoelectric conversion part PD is initialized. Hereinafter, this control is called "PD reset".
而後,垂直掃描電路211於曝光即將結束之前,針對所有像素將後段重置信號rstb及選擇信號ϕr設為高位準,且於整個脈衝期間供給高位準之FD重置信號rst。藉此,將浮動擴散區域FD初始化,將與此時之浮動擴散區域FD之位準相應之位準保持於電容元件121。以下將該控制稱為「FD重置」。以下將該控制稱為「FD重置」。Then, the vertical scanning circuit 211 sets the rear-stage reset signal rstb and the selection signal ϕr to a high level for all pixels just before the exposure is completed, and supplies the high-level FD reset signal rst during the entire pulse period. Thereby, the floating diffusion area FD is initialized, and a level corresponding to the current level of the floating diffusion area FD is held in the capacitive element 121 . This control is referred to as "FD reset" below. This control is referred to as "FD reset" below.
以下將FD重置時之浮動擴散區域FD之位準、和與該位準對應之位準(電容元件121之保持位準、或垂直信號線VSL之位準)總稱為「P相」或「重置位準」。Hereinafter, the level of the floating diffusion region FD when FD is reset and the level corresponding to this level (the holding level of the capacitive element 121 or the level of the vertical signal line VSL) are collectively referred to as "P phase" or "P phase". Reset level".
垂直掃描電路211於曝光結束時,針對所有像素將後段重置信號rstb及選擇信號ϕs設為高位準,且於整個脈衝期間供給高位準之傳送信號trg。藉此,向浮動擴散區域FD傳送與曝光量相應之信號電荷,將與此時之浮動擴散區域FD之位準相應之位準保持於電容元件122。At the end of the exposure, the vertical scanning circuit 211 sets the rear-stage reset signal rstb and the selection signal ϕs to a high level for all pixels, and supplies a high-level transmission signal trg during the entire pulse period. Thereby, signal charges corresponding to the exposure amount are transferred to the floating diffusion area FD, and a level corresponding to the level of the floating diffusion area FD at that time is held in the capacitive element 122 .
以下將信號電荷傳送時之浮動擴散區域FD之位準、和與該位準對應之位準(電容元件122之保持位準、或垂直信號線VSL之位準)總稱為「D相」或「信號位準」。Hereinafter, the level of the floating diffusion region FD during signal charge transfer and the level corresponding to this level (the holding level of the capacitive element 122 or the level of the vertical signal line VSL) are collectively referred to as "D phase" or "D phase". signal level".
將如此般針對所有像素同時開始、結束曝光之曝光控制稱為全域快門方式。藉由該曝光控制,所有像素之前段電路110依序產生重置位準及信號位準。重置位準被保持於電容元件121,信號位準被保持於電容元件122。Exposure control that starts and ends exposure for all pixels at the same time is called the global shutter method. Through this exposure control, the front-end circuit 110 of all pixels sequentially generates reset levels and signal levels. The reset level is held by the capacitive element 121 , and the signal level is held by the capacitive element 122 .
於曝光結束後,垂直掃描電路211依序選擇列,並依序輸出該列之重置位準及信號位準。於輸出重置位準時,垂直掃描電路211將選擇之列之FD重置信號rst及後段選擇信號selb設為高位準,且於整個特定期間供給高位準之選擇信號ϕr。藉此,將電容元件121連接於後段節點140,並讀出重置位準。After the exposure is completed, the vertical scanning circuit 211 selects the column in sequence and outputs the reset level and signal level of the column in sequence. When outputting the reset level, the vertical scanning circuit 211 sets the FD reset signal rst of the selected column and the subsequent selection signal selb to a high level, and supplies a high level selection signal ϕr throughout the specific period. Thereby, the capacitive element 121 is connected to the subsequent node 140, and the reset level is read.
於讀出重置位準後,垂直掃描電路211於將選擇之列之FD重置信號rst及後段選擇信號selb設為高位準不變下,於整個脈衝期間供給高位準之後段重置信號rstb。藉此,將後段節點140之位準初始化。此時,選擇電晶體131及選擇電晶體132兩者均為斷開狀態,電容元件121及122自後段節點140切離。After reading the reset level, the vertical scanning circuit 211 supplies the high-level rear segment reset signal rstb during the entire pulse period without setting the FD reset signal rst and the rear segment selection signal selb of the selected column to a high level. . Thereby, the level of the subsequent node 140 is initialized. At this time, both the selection transistor 131 and the selection transistor 132 are in an off state, and the capacitive elements 121 and 122 are disconnected from the subsequent node 140 .
於後段節點140之初始化後,垂直掃描電路211於將選擇之列之FD重置信號rst及後段選擇信號selb設為高位準不變下,於整個特定期間供給高位準之選擇信號ϕs。藉此,將電容元件122連接於後段節點140,並讀出信號位準。After the initialization of the back-stage node 140, the vertical scanning circuit 211 supplies the high-level selection signal ϕs throughout the specific period while setting the FD reset signal rst and the back-stage selection signal selb of the selected column to a high level. Thereby, the capacitive element 122 is connected to the subsequent node 140, and the signal level is read out.
藉由上述之讀出控制,所選擇之列之選擇電路130依序進行:將電容元件121連接於後段節點140之控制、將電容元件121及122自後段節點140切離之控制、及將電容元件122連接於後段節點140之控制。又,於將電容元件121及122自後段節點140切離時,所選擇之列之後段重置電晶體141將後段節點140之位準初始化。又,所選擇之列之後段電路150經由後段節點140自電容元件121及122依序讀出重置位準及信號位準並向垂直信號線VSL輸出。Through the above readout control, the selection circuit 130 of the selected column sequentially performs the control of connecting the capacitive element 121 to the subsequent node 140, the control of disconnecting the capacitive elements 121 and 122 from the subsequent node 140, and the control of connecting the capacitor 121 to the subsequent node 140. The component 122 is connected to the control of the subsequent node 140 . In addition, when the capacitive elements 121 and 122 are disconnected from the rear node 140, the selected row rear reset transistor 141 initializes the level of the rear node 140. In addition, the subsequent stage circuit 150 of the selected column sequentially reads out the reset level and the signal level from the capacitive elements 121 and 122 through the subsequent node 140 and outputs them to the vertical signal line VSL.
於如以上之構中,例如,可行的是,包含光電轉換部PD、傳送電晶體112、FD重置電晶體113、及前段放大電晶體115之受光電路配置於受光晶片41,其以外之電路構成302配置於電路晶片42。In the above structure, for example, it is possible to arrange the light-receiving circuit including the photoelectric conversion part PD, the transfer transistor 112, the FD reset transistor 113, and the front-stage amplification transistor 115 on the light-receiving chip 41, and other circuits Structure 302 is disposed on circuit chip 42 .
又,後段重置電晶體141及後段電路150係對浮動擴散區域FD之轉換效率μ不造成影響之電路構成。為此,於本實施形態中,於構成基本單元之複數個像素共有後段重置電晶體141及後段電路150,且變更該共有部分之配線長。藉此,可維持各像素100之轉換效率μ,且實現像素共有構造。In addition, the rear-stage reset transistor 141 and the rear-stage circuit 150 are circuit structures that do not affect the conversion efficiency μ of the floating diffusion region FD. Therefore, in this embodiment, the rear-stage reset transistor 141 and the rear-stage circuit 150 are shared among the plurality of pixels constituting the basic unit, and the wiring length of the shared portion is changed. Thereby, the conversion efficiency μ of each pixel 100 can be maintained, and a pixel sharing structure can be achieved.
此外,於前段電路110中,自傳送電晶體112之汲極至前段放大電晶體115之閘極及FD重置電晶體113之源極之配線長由於可能對浮動擴散區域FD之轉換效率μ造成影響,故較佳為於共有相同之浮動擴散區域FD之像素100間為相同之配線長。In addition, in the front-end circuit 110, the wiring length from the drain of the transfer transistor 112 to the gate of the front-end amplification transistor 115 and the source of the FD reset transistor 113 may affect the conversion efficiency μ of the floating diffusion region FD. , so it is preferable to have the same wiring length among the pixels 100 sharing the same floating diffusion region FD.
如此,於以配置於電路晶片42之電路構成302實現像素共有之構成中,自如圖18所示之以拜耳排列之基本單元50A構成像素共有之構造向如圖19所例示之以L字狀排列之共有單元50ar(或共有單元50ab)構成像素共有之構造的設計變更、例如自於矩形區域內佈局之電路構成302向於L字狀之區域內佈局之電路構成302a之設計變更,主要可藉由變更對轉換效率μ不造成影響之後段重置電晶體141及後段電路150之配線長來實現,故而可維持各像素100之轉換效率μ,且藉由非常容易之作業來實現。In this way, in the structure in which pixels are shared by the circuit structure 302 arranged on the circuit chip 42, the pixels are shared from the Bayer arrangement of the basic units 50A as shown in FIG. 18 to the L-shaped arrangement as shown in FIG. 19 The design change of the common unit 50ar (or the common unit 50ab) that constitutes the common structure of the pixels, such as the design change from the circuit structure 302 laid out in a rectangular area to the circuit structure 302a laid out in an L-shaped area, can mainly be achieved by This is achieved by changing the wiring lengths of the rear-stage reset transistor 141 and the rear-stage circuit 150 without affecting the conversion efficiency μ. Therefore, the conversion efficiency μ of each pixel 100 can be maintained and is achieved by a very easy operation.
1.12 對於另一彩色濾光器排列之應用 於上述中例示之共有單元之像素排列形狀不限定於L字狀,可考量與採用之彩色濾光器排列之組合來採用最佳之排列形狀。為此,此處,說明採用RGBW排列(W為白色)而改變拜耳排列之情形之像素排列形狀之例。 1.12 Application to another color filter arrangement The pixel arrangement shape of the common unit illustrated above is not limited to the L shape, and the optimal arrangement shape can be adopted by considering the combination with the color filter arrangement used. Therefore, here, an example of a pixel arrangement shape using an RGBW arrangement (W is white) and changing the Bayer arrangement will be described.
圖20係顯示對於採用RGBW排列(W為白色)之影像感測器可應用之共有單元之一例之圖。如圖20(A)所示,於除了R像素30R、G像素30G及B像素30B以外,亦配置有W像素30W之情形下,且該W像素30W設置有對於可見光域具備寬透過特性之彩色濾光器52,針對RGBW中之至少1個(於圖20中除了G以外),藉由以垂直方向與水平方向之空間頻率變得均一之方式適當配置加算像素之組合,亦可抑制畫質之降低。例如,於圖20(B)所示之例中,可將W像素、R像素及B像素各者之垂直方向與水平方向之空間頻率設為均一。FIG. 20 is a diagram showing an example of a common unit applicable to an image sensor using an RGBW arrangement (W is white). As shown in FIG. 20(A) , in addition to the R pixel 30R, the G pixel 30G, and the B pixel 30B, a W pixel 30W is also arranged, and the W pixel 30W is provided with a color having wide transmission characteristics in the visible light range. The filter 52 can also suppress image quality by appropriately arranging a combination of addition pixels for at least one of RGBW (except G in FIG. 20 ) so that the spatial frequencies in the vertical and horizontal directions become uniform. decrease. For example, in the example shown in FIG. 20(B) , the spatial frequencies in the vertical direction and the horizontal direction of each of the W pixels, R pixels, and B pixels can be set to be uniform.
1.13 總結 如以上般,根據本實施形態,針對自像素陣列部21讀出之圖像資料中之至少1個色成分,可將垂直方向與水平方向之空間頻率均一化,故而可抑制產生鋸齒等,而抑制畫質之降低。 1.13 Summary As described above, according to this embodiment, the spatial frequencies in the vertical direction and the horizontal direction can be equalized for at least one color component in the image data read out from the pixel array unit 21, so that the occurrence of aliasing, etc. can be suppressed. Suppress image quality degradation.
2. 第2實施形態 其次,針對本揭示之第2實施形態,參照圖式,詳細地說明。此外,針對與上述之實施形態同樣之構成、動作及效果,藉由引用其等,而省略重複之說明。 2. Second embodiment Next, the second embodiment of the present disclosure will be described in detail with reference to the drawings. In addition, the same structures, operations, and effects as those in the above-mentioned embodiments are cited, and repeated descriptions are omitted.
於上述之第1實施形態中,說明了以下情形,即:藉由適當配置共有浮動擴散區域FD之共有單元之像素排列、亦即加算像素之組合,而針對圖像資料中之至少1個色成分,將垂直方向及水平方向之空間頻率均一化,抑制畫質之降低。對此,於第2實施形態中,適當配置像素驅動線LD、像素共有構造(亦即共有單元之像素排列)、彩色濾光器排列等。藉此,由於可取得針對圖像資料中之至少1個色成分將垂直方向及水平方向之空間頻率均一化之對於後段處理而言較佳之圖像資料,故可抑制畫質之降低。In the above-described first embodiment, a case has been described in which at least one color in the image data is obtained by appropriately arranging the pixel arrangement of the common units sharing the floating diffusion area FD, that is, by adding a combination of pixels. components to uniformize the spatial frequencies in the vertical and horizontal directions and suppress the degradation of image quality. In this regard, in the second embodiment, the pixel driving lines LD, the pixel sharing structure (that is, the pixel arrangement of the shared units), the color filter arrangement, and the like are appropriately arranged. This makes it possible to obtain image data that is better for post-processing in which the spatial frequencies in the vertical direction and the horizontal direction are uniformized for at least one color component in the image data, so that degradation of image quality can be suppressed.
於本實施形態中,針對電子機器及影像感測器,可與第1實施形態所例示之電子機器及影像感測器同樣。惟,於本實施形態中,將彩色濾光器排列及像素共有構造置換成以下所例示者In this embodiment, the electronic equipment and the image sensor can be the same as the electronic equipment and the image sensor illustrated in the first embodiment. However, in this embodiment, the color filter arrangement and pixel common structure are replaced with those illustrated below
2.1 彩色濾光器排列及像素共有構造之例 圖21係顯示採用本實施形態之彩色濾光器排列及像素共有構造之像素配置例之俯視圖。如圖21所示,於本實施形態中,像素陣列部221具備將R像素30R、G像素30G、及B像素30B分別於斜向方向排列之像素配置構造。 2.1 Example of color filter arrangement and pixel common structure FIG. 21 is a top view showing an example of pixel arrangement using the color filter arrangement and pixel common structure of this embodiment. As shown in FIG. 21 , in this embodiment, the pixel array unit 221 has a pixel arrangement structure in which R pixels 30R, G pixels 30G, and B pixels 30B are arranged in an oblique direction.
於如此之構成中,共有單元如圖22(A)所示般由2×2之共有單元50r及2×2之共有單元50b構成,且該2×2之共有單元50r包含排列於右斜下方向之2個R像素30R及排列於右斜上方向之2個G像素30G,該2×2之共有單元50b包含排列於右斜下方向之2個B像素30B及排列於右斜上方向之2個G像素30G。In such a structure, the common unit is composed of a 2×2 common unit 50r and a 2×2 common unit 50b as shown in FIG. 22(A) , and the 2×2 common unit 50r includes a Two R pixels 30R in the right direction and two G pixels 30G arranged in the right diagonally upward direction. The 2×2 shared unit 50b includes two B pixels 30B arranged in the right diagonally downward direction and two B pixels 30B arranged in the right diagonally upward direction. 2G pixels 30G.
如此,藉由將位於2×2之像素排列之對角之同色像素設為加算像素之組合,而如圖22(B)所示般,可將加算後之R像素、B像素及G像素各者之空間頻率於垂直方向與水平方向兩方向均一化,故而可抑制因鋸齒等所致之畫質之降低。In this way, by setting the pixels of the same color located at the opposite corners of the 2×2 pixel arrangement as a combination of the added pixels, as shown in Figure 22(B), the added R pixels, B pixels and G pixels can be The spatial frequency is uniformized in both the vertical and horizontal directions, thus reducing image quality degradation caused by aliasing and the like.
又,根據本實施形態,由於R像素或B像素與G像素之加算後之空間座標一致,故可容易提高R像素及B像素之像素插補之精度。Furthermore, according to this embodiment, since the added spatial coordinates of R pixels or B pixels and G pixels are consistent, the accuracy of pixel interpolation of R pixels and B pixels can be easily improved.
進而,根據本實施形態,亦存在可於不變更浮動擴散區域FD之配線構造下構成共有單元50r及50b之優點。Furthermore, according to this embodiment, there is also an advantage that the common units 50r and 50b can be configured without changing the wiring structure of the floating diffusion region FD.
此外,於全像素讀出之情形下,可藉由如使用圖14及圖15所說明之方法,執行像素排列之重排馬賽克處理,將圖像資料中之R像素、G像素及B像素之排列設為拜耳排列。惟,不限定於此,可執行與本例之像素排列對應之解馬賽克處理。In addition, in the case of full pixel readout, the rearrangement mosaic processing of the pixel arrangement can be performed by using the method illustrated in Figures 14 and 15 to convert the R pixels, G pixels and B pixels in the image data. The arrangement is set to Bayer arrangement. However, it is not limited to this, and demosaic processing corresponding to the pixel arrangement in this example can be performed.
根據本實施形態,可獲得亮度解析度之品質較於第1實施形態中使用圖8所例示之四倍拜耳排列為佳之圖像資料。又,根據本實施形態,可使進行完像素加算之情形之畫質較採用拜耳排列或四倍拜耳排列之情形之畫質提高。如此,於全像素模式及合併模式中均可抑制畫質之降低。According to this embodiment, it is possible to obtain image data with better brightness resolution than in the first embodiment using the quadruple Bayer arrangement illustrated in FIG. 8 . Furthermore, according to this embodiment, the image quality when pixel addition is completed can be improved compared with the image quality when the Bayer arrangement or the quadruple Bayer arrangement is used. In this way, the degradation of image quality can be suppressed in both full pixel mode and merge mode.
其他構成、動作及效果由於可與上述之實施形態同樣,故此處省略詳細之說明。Since other structures, operations, and effects are the same as those in the above-described embodiment, detailed descriptions are omitted here.
2.2 彩色濾光器排列及像素共有構造之變化例 第2實施形態之彩色濾光器排列及像素共有構造由於與將排列於斜向方向之像素設為加算像素之組合之構造親和性較高,故可採用同色像素排列於斜向方向之各種彩色濾光器排列。為此,以下,針對於上述中使用圖21及圖22所說明之第2實施形態之彩色濾光器排列及像素共有構造之變化例,以下舉出若干個例子進行說明。此外,針對於以下之說明中未特別提及之構成、動作及效果,可與上述之實施形態或其他變化例同樣。 2.2 Variation examples of color filter arrangement and pixel common structure The color filter arrangement and pixel sharing structure of the second embodiment are highly compatible with the structure in which pixels arranged in the diagonal direction are used as additive pixels. Therefore, various colors in which pixels of the same color are arranged in the diagonal direction can be used. Filter arrangement. Therefore, several examples of modifications of the color filter arrangement and pixel sharing structure of the second embodiment described above using FIGS. 21 and 22 will be described below. In addition, the configuration, operations, and effects not specifically mentioned in the following description may be the same as those in the above-mentioned embodiment or other modified examples.
2.2.1 第1變化例 圖23係顯示採用第1變化例之彩色濾光器排列及像素共有構造之像素配置例之俯視圖。如圖23(A)所示,第1變化例之像素陣列部221A具備除了R像素30R、G像素30G及B像素30B以外,W像素30W亦分別排列於斜向方向之像素配置構造。 2.2.1 The first variation FIG. 23 is a top view showing a pixel arrangement example using the color filter arrangement and the pixel common structure of the first variation. As shown in FIG. 23(A) , the pixel array section 221A of the first modification example has a pixel arrangement structure in which in addition to the R pixels 30R, G pixels 30G, and B pixels 30B, W pixels 30W are also arranged in the oblique direction.
於如此之構成中,共有單元如圖23(A)所示般由2×2之共有單元50rw、2×2之共有單元50gw、及2×2之共有單元50bw構成,且該2×2之共有單元50rw包含排列於右斜下方向之2個R像素30R及排列於右斜上方向之2個W像素30W,該2×2之共有單元50gw包含排列於右斜下方向之2個G像素30G及排列於右斜上方向之2個W像素30W,該2×2之共有單元50bw包含排列於右斜下方向之2個B像素30B及排列於右斜上方向之2個W像素30W。In such a configuration, the common unit is composed of a 2×2 common unit 50rw, a 2×2 common unit 50gw, and a 2×2 common unit 50bw, as shown in FIG. 23(A) , and the 2×2 The shared unit 50rw includes two R pixels 30R arranged in the diagonally lower right direction and two W pixels 30W arranged in the upper right direction. The 2×2 shared unit 50gw includes two G pixels arranged in the diagonally lower right direction. 30G and two W pixels 30W arranged in the diagonally upward direction to the right. The 2×2 shared unit 50bw includes two B pixels 30B arranged in the diagonally downward direction to the right and two W pixels 30W arranged in the diagonally upward direction to the right.
如此,於除了R像素30R、G像素30G及B像素30B以外,亦設置W像素30W之情形下,藉由將位於2×2之像素排列之對角之同色像素設為加算像素之組合,而亦可如圖23(B)所示般,將加算後之R像素、B像素、G像素及W像素各者之空間頻率於垂直方向與水平方向之兩方向均一化。藉此,可與上述之實施形態同樣地,抑制因鋸齒等所致之畫質之降低。In this way, in the case where in addition to the R pixels 30R, G pixels 30G and B pixels 30B, the W pixels 30W are also provided, by setting the same color pixels located at the opposite corners of the 2×2 pixel arrangement as a combination of additive pixels, Alternatively, as shown in FIG. 23(B) , the added spatial frequencies of each of the R pixels, B pixels, G pixels, and W pixels can be normalized in both the vertical and horizontal directions. Thereby, like the above-mentioned embodiment, it is possible to suppress deterioration in image quality due to aliasing or the like.
2.2.2 第2變化例 圖24係顯示採用第2變化例之彩色濾光器排列及像素共有構造之像素配置例之俯視圖。如圖24(A)所示,第2變化例之像素陣列部221B具備下述像素配置構造,即:在與作為第1變化例而說明之像素陣列部221A同樣之構成中,將W像素30W置換成設置有對於紅外光(包含近紅外光)具備透過特性之彩色濾光器52的IR像素30IR。 2.2.2 Second variation FIG. 24 is a top view showing a pixel arrangement example using a color filter arrangement and a pixel sharing structure according to the second variation. As shown in FIG. 24(A) , the pixel array section 221B of the second modification example has a pixel arrangement structure in which the W pixels 30W are arranged in the same configuration as the pixel array section 221A described as the first modification example. It is replaced with an IR pixel 30IR provided with a color filter 52 having transmission characteristics for infrared light (including near-infrared light).
因此,本變化例之像素陣列部221B如圖24(A)所示般由2×2之共有單元50rir、2×2之共有單元50gir、及2×2之共有單元50bir構成,且該2×2之共有單元50rir包含排列於右斜下方向之2個R像素30R及排列於右斜上方向之2個IR像素30IR,該2×2之共有單元50gir包含排列於右斜下方向之2個G像素30G及排列於右斜上方向之2個IR像素30IR,該2×2之共有單元50bir包含排列於右斜下方向之2個B像素30B及排列於右斜上方向之2個IR像素30IR。Therefore, the pixel array section 221B of this modification example is composed of a 2×2 shared unit 50rir, a 2×2 shared unit 50gir, and a 2×2 shared unit 50bir, as shown in FIG. 24(A) , and the 2×2 shared unit 50bir The common unit 50rir of 2 includes two R pixels 30R arranged in the diagonally lower right direction and two IR pixels 30IR arranged in the upper right direction. The common unit 50gir of 2×2 includes two R pixels 30R arranged in the diagonally lower right direction. G pixel 30G and two IR pixels 30IR arranged in the right diagonally upward direction. The 2×2 shared unit 50bir includes two B pixels 30B arranged in the right diagonally downward direction and two IR pixels arranged in the right diagonally upward direction. 30IR.
如此,於除了R像素30R、G像素30G及B像素30B以外,亦設置IR像素30IR之情形下,藉由將位於2×2之像素排列之對角之同色像素設為加算像素之組合,而亦可如圖24(B)所示般,將加算後之R像素、B像素、G像素及IR像素各者之空間頻率於垂直方向與水平方向之兩方向均一化。藉此,可與上述之實施形態同樣地,抑制因鋸齒等所致之畫質之降低。In this way, in the case where in addition to the R pixels 30R, G pixels 30G and B pixels 30B, the IR pixel 30IR is also provided, by setting the same color pixels located at the diagonal corners of the 2×2 pixel arrangement as a combination of additive pixels, Alternatively, as shown in FIG. 24(B) , the added spatial frequencies of each of the R pixels, B pixels, G pixels, and IR pixels can be normalized in both the vertical and horizontal directions. Thereby, like the above-mentioned embodiment, it is possible to suppress deterioration in image quality due to aliasing or the like.
2.2.3 第3變化例 如上述之第1變化例及第2變化例般,於除了R像素30R、G像素30G及B像素30B以外,W像素30W及IR像素30IR亦包含於像素陣列部21之情形下,藉由至少將加算後之G像素30G、或W像素30W或IR像素30IR之垂直方向及水平方向之空間頻率設為均一,而可抑制畫質之降低。因而,例如,於如圖25~圖28所例示之共有單元具備m×n(m、n為3以上之整數)個像素排列之情形(圖25~圖28之例為3×3之像素排列)下,不限定於同色2像素之像素加算,可進行同色4像素或同色5像素之像素加算等各種變化。 2.2.3 The third variation As in the above-mentioned first variation and second variation, in the case where in addition to the R pixel 30R, G pixel 30G, and B pixel 30B, the W pixel 30W and the IR pixel 30IR are also included in the pixel array portion 21, by at least By setting the vertical and horizontal spatial frequencies of the added G pixels 30G, W pixels 30W, or IR pixels 30IR to be uniform, degradation of image quality can be suppressed. Therefore, for example, in the case where the common unit illustrated in FIGS. 25 to 28 has m×n (m and n are integers of 3 or more) pixel arrangements (the examples in FIGS. 25 to 28 are 3×3 pixel arrangements) ), the calculation is not limited to pixel addition of 2 pixels of the same color, and various changes such as pixel addition of 4 pixels of the same color or 5 pixels of the same color can be performed.
此外,圖25所例示之像素陣列部221C由3×3之共有單元50r4及3×3之共有單元50b4構成,且該3×3之共有單元50r4包含分別位於四角隅與中央之5個G像素30G、及位於4邊各者之中央之4個R像素30R,該3×3之共有單元50b4包含分別位於四角隅與中央之5個G像素30G、及位於4邊各者之中央之4個B像素30B。In addition, the pixel array portion 221C illustrated in FIG. 25 is composed of a 3×3 shared unit 50r4 and a 3×3 shared unit 50b4, and the 3×3 shared unit 50r4 includes 5 G pixels located at the four corners and the center respectively. 30G, and four R pixels 30R located in the center of each of the four sides. The 3×3 total unit 50b4 includes five G pixels 30G located at the four corners and the center, and four R pixels 30R located in the center of each of the four sides. Bpixel 30B.
圖26所例示之像素陣列部221D由3×3之共有單元50r5及3×3之共有單元50b5構成,且該3×3之共有單元50r5包含分別位於四角隅與中央之5個R像素30R、及位於4邊各者之中央之4個G像素30G,該3×3之共有單元50b5包含分別位於四角隅與中央之5個B像素30B、及位於4邊各者之中央之4個G像素30G。The pixel array portion 221D illustrated in FIG. 26 is composed of a 3×3 shared unit 50r5 and a 3×3 shared unit 50b5, and the 3×3 shared unit 50r5 includes five R pixels 30R located at the four corners and the center respectively. and 4 G pixels 30G located in the center of each of the four sides. The 3×3 shared unit 50b5 includes 5 B pixels 30B located at the four corners and the center respectively, and 4 G pixels located in the center of each of the four sides. 30G.
圖27所例示之像素陣列部221E由3×3之共有單元50r4w及3×3之共有單元50b4構成,且該3×3之共有單元50r4w包含分別位於四角隅與中央之5個W像素30W、及位於4邊各者之中央之4個R像素30R,該3×3之共有單元50b4包含分別位於四角隅與中央之5個G像素30G、及位於4邊各者之中央之4個B像素30B。The pixel array portion 221E illustrated in FIG. 27 is composed of a 3×3 shared unit 50r4w and a 3×3 shared unit 50b4, and the 3×3 shared unit 50r4w includes five W pixels 30W located at the four corners and the center respectively. and 4 R pixels 30R located at the center of each of the four sides. The 3×3 shared unit 50b4 includes 5 G pixels 30G located at the four corners and the center respectively, and 4 B pixels located at the center of each of the four sides. 30B.
圖28所例示之像素陣列部221F由3×3之共有單元50r5w、3×3之共有單元50g5w及3×3之共有單元50b5w構成,且該3×3之共有單元50r5w包含分別位於四角隅與中央之5個R像素30R、及位於4邊各者之中央之4個W像素30W,該3×3之共有單元50g5w包含分別位於四角隅與中央之5個G像素30G、及位於4邊各者之中央之4個W像素30W,該3×3之共有單元50b5w包含分別位於四角隅與中央之5個B像素30B、及位於4邊各者之中央之4個W像素30W。The pixel array portion 221F illustrated in FIG. 28 is composed of a 3×3 shared unit 50r5w, a 3×3 shared unit 50g5w, and a 3×3 shared unit 50b5w. The 3×3 shared unit 50r5w includes four corners respectively. There are 5 R pixels 30R in the center and 4 W pixels 30W located in the center of each of the four sides. The 3×3 total unit 50g5w includes 5 G pixels 30G located in the four corners and the center, and 5 G pixels 30G located in the four sides. There are 4 W pixels 30W in the center. The 3×3 shared unit 50b5w includes 5 B pixels 30B located at the four corners and the center respectively, and 4 W pixels 30W located in the center of each of the four sides.
如此,於共有單元具備m×n(m、n為3以上之整數)個像素排列之情形下,藉由針對至少1個波長成分,將加算後之像素之垂直方向及水平方向之空間頻率設為均一,而亦可與上述之實施形態同樣地,抑制因鋸齒等所致之畫質之降低。In this way, when the total unit has m×n (m, n is an integer of 3 or more) pixel arrangements, by setting the vertical and horizontal spatial frequencies of the added pixels for at least one wavelength component. It is uniform, and like the above-mentioned embodiment, it is also possible to suppress deterioration in image quality due to aliasing or the like.
3. 第3實施形態 其次,針對本揭示之第3實施形態,參照圖式,詳細地說明。此外,針對與上述之實施形態同樣之構成、動作及效果,藉由引用其等,而省略重複之說明。 3. Third embodiment Next, the third embodiment of the present disclosure will be described in detail with reference to the drawings. In addition, the same structures, operations, and effects as those in the above-mentioned embodiments are cited, and repeated descriptions are omitted.
如圖29所示,例如,於採用滾動快門方式之影像感測器中,就每一列執行快門控制。具體而言,藉由沿列方向就每一列配線之像素驅動線(亦稱為水平信號線)LD,進行浮動擴散區域FD(及光電轉換部PD)之重置(重置信號)及像素信號之讀出(選擇信號)等之時序控制,於像素30之浮動擴散區域FD蓄積電荷。As shown in FIG. 29 , for example, in an image sensor using a rolling shutter method, shutter control is performed for each column. Specifically, the reset (reset signal) and pixel signal of the floating diffusion region FD (and photoelectric conversion part PD) are performed by pixel driving lines (also called horizontal signal lines) LD wired in each column along the column direction. The timing control of readout (selection signal), etc. accumulates charges in the floating diffusion region FD of the pixel 30.
於如此之構成中,在就每一像素30改變快門時間地進行HDR(High Dynamic Range,高動態範圍)攝影等之情形下,例如,必須如圖30所例示般,以使電荷蓄積時間短之像素(以下亦稱為短蓄像素)30S排列於奇數行(或偶數行),使電荷蓄積時間長之像素(以下亦稱為長蓄像素)30L排列於偶數行(或奇數行)之方式就每一列改變控制,或如圖31所例示般,以於短蓄像素30S與長蓄像素30L設置分別之像素驅動線LD(例如重置線)之方式增加水平信號線之條數。In such a configuration, when HDR (High Dynamic Range) photography is performed by changing the shutter time for each pixel 30, for example, it is necessary to shorten the charge accumulation time as shown in FIG. 30. The pixels (hereinafter also referred to as short-storage pixels) 30S are arranged in odd-numbered rows (or even-numbered rows), and the pixels 30L with long charge storage time (hereinafter also referred to as long-storage pixels) are arranged in even-numbered rows (or odd-numbered rows). Each column changes the control, or as illustrated in FIG. 31 , the number of horizontal signal lines is increased by setting separate pixel driving lines LD (for example, reset lines) in the short storage pixels 30S and the long storage pixels 30L.
此處,於就每一列改變控制之情形下,可將配線構造等簡單化,但解析度於水平方向與垂直方向不同,因此,有產生鋸齒等而畫質降低之虞。另一方面,由於在增加水平信號線之情形下,可對水平方向與垂直方向均一地取樣,故可抑制畫質之降低,但由於配線構造等複雜化,故產生難以搭載於經高解析度化之影像感測器之問題。Here, when the control is changed for each column, the wiring structure and the like can be simplified, but the resolution is different in the horizontal direction and the vertical direction, so there is a risk that aliasing etc. will occur and the image quality will be reduced. On the other hand, when horizontal signal lines are added, the horizontal and vertical directions can be sampled uniformly, so the degradation of image quality can be suppressed. However, due to the complexity of the wiring structure, etc., it is difficult to mount it on a high-resolution system. image sensor problem.
為此,於本實施形態中,如圖32或圖33所例示般,將先前利用1條像素驅動線LD控制1列份額之像素30之構造,以利用1條像素驅動線LD控制分散配置於2列之長蓄像素30L或短蓄像素30S之方式變更。具體而言,將電荷蓄積時間不同之短蓄像素30S與長蓄像素30L分別於斜向方向(亦即以於列方向及行方向為交替之方式)排列,且將1條水平信號線連接於分成2列而配置之相同之電荷蓄積時間之像素30(短蓄像素30S或長蓄像素30L)。Therefore, in this embodiment, as illustrated in FIG. 32 or FIG. 33 , the previous structure of using one pixel driving line LD to control one column of pixels 30 is replaced with using one pixel driving line LD to control the distributed arrangement of the pixels 30 . Change the format of 2 rows of long storage pixels 30L or short storage pixels 30S. Specifically, the short storage pixels 30S and the long storage pixels 30L with different charge accumulation times are arranged in the oblique direction (that is, in an alternating manner in the column direction and row direction), and a horizontal signal line is connected to The pixels 30 (short storage pixels 30S or long storage pixels 30L) with the same charge storage time are divided into two columns and arranged.
藉此,由於可抑制水平信號線之條數増加,將不同之電荷蓄積時間之像素30(短蓄像素30S或長蓄像素30L)遍及像素陣列部321之整體無遺漏地均等地配置,故可將短蓄像素30S及長蓄像素30L各者之垂直方向及水平方向之空間頻率設為均一。其結果,可取得抑制畫質之降低之HDR圖像。Thereby, the increase in the number of horizontal signal lines can be suppressed, and the pixels 30 with different charge storage times (short storage pixels 30S or long storage pixels 30L) can be evenly arranged throughout the entire pixel array portion 321 without missing a beat. The vertical and horizontal spatial frequencies of each of the short storage pixel 30S and the long storage pixel 30L are set to be uniform. As a result, it is possible to obtain an HDR image in which degradation of image quality is suppressed.
惟,如圖34(A)所示,若對於以遍及上下2列互不相鄰之方式交替排列之短蓄像素30S或長蓄像素30L,使用與對於應用拜耳排列之像素陣列部21A之驅動方式同樣之驅動方式來執行讀出,則如圖34(B)所示般,將相同之電荷蓄積時間之像素30作為一列份額之圖像資料而交替讀出,故而像素陣列部321之短蓄像素30S及長蓄像素30L之實際之像素排列、與讀出之圖像資料中之短蓄像素30S及長蓄像素30L之像素排列不同。However, as shown in FIG. 34(A) , if the short storage pixels 30S or the long storage pixels 30L are alternately arranged in two upper and lower columns so as not to be adjacent to each other, the same driving method as that used for the pixel array unit 21A applying the Bayer arrangement is used. When reading is performed using the same driving method, as shown in FIG. 34(B) , the pixels 30 with the same charge accumulation time are alternately read out as image data of one column. Therefore, the short storage time of the pixel array portion 321 The actual pixel arrangement of the pixels 30S and the long storage pixels 30L is different from the pixel arrangement of the short storage pixels 30S and the long storage pixels 30L in the read image data.
為此,於本實施形態中,如圖34(C)所示,於讀出之圖像資料中,可執行每隔一行替換短蓄像素30S與長蓄像素30L之重排馬賽克處理。於圖34所示之例中,可執行將自左側起第偶數列之#2之長蓄像素30L與#4之短蓄像素30S替換之重排馬賽克處理。藉此,可使像素陣列部321中之短蓄像素30S及長蓄像素30L之實際之像素排列、與讀出之圖像資料中之短蓄像素30S及長蓄像素30L之像素排列一致,故而可將短蓄像素30S及長蓄像素30L各者之垂直方向及水平方向之空間頻率設為均一,藉此可取得抑制畫質之降低之HDR圖像。Therefore, in this embodiment, as shown in FIG. 34(C) , in the read image data, a rearrangement mosaic process of replacing the short storage pixels 30S and the long storage pixels 30L in every other row can be performed. In the example shown in FIG. 34 , the rearrangement mosaic process of replacing the long storage pixel 30L of #2 with the short storage pixel 30S of #4 in the even-numbered column from the left can be performed. Thereby, the actual pixel arrangement of the short storage pixels 30S and the long storage pixels 30L in the pixel array part 321 can be consistent with the pixel arrangement of the short storage pixels 30S and the long storage pixels 30L in the read image data. Therefore, The vertical and horizontal spatial frequencies of each of the short storage pixel 30S and the long storage pixel 30L can be made uniform, thereby obtaining an HDR image that suppresses degradation in image quality.
此外,本實施形態之重排馬賽克處理例如可使用與在第1實施形態中使用圖15所說明之用於執行重排馬賽克處理之構成同樣之構成來實現。例如,於圖34所示之例中,首先,自像素陣列部321讀出且經AD轉換之第1列資料暫時儲存於列記憶體101-1,相同地第2列資料暫時儲存於列記憶體101-2。如是,重排馬賽克處理部102藉由自儲存於列記憶體101-1及101-2之第2列資料及第3列資料,交替讀出短蓄像素30S之像素值與長蓄像素30L之像素值,而產生1列份額之圖像資料並輸出。以後,藉由將同樣之動作每次重複2列,而輸出與像素陣列部321中之實際之像素排列一致之像素排列之輸出圖像資料。In addition, the rearrangement mosaic process of this embodiment can be realized using the structure similar to the structure for executing the rearrangement mosaic process demonstrated using FIG. 15 in 1st Embodiment, for example. For example, in the example shown in FIG. 34 , first, the first column data read from the pixel array unit 321 and AD-converted are temporarily stored in the column memory 101 - 1 , and similarly, the second column data are temporarily stored in the column memory. Body 101-2. In this case, the rearrangement mosaic processing unit 102 alternately reads the pixel value of the short storage pixel 30S and the long storage pixel 30L from the second column data and the third column data stored in the column memories 101-1 and 101-2. The pixel value is used to generate 1 column of image data and output it. Thereafter, by repeating the same operation two columns at a time, output image data having a pixel arrangement consistent with the actual pixel arrangement in the pixel array unit 321 is output.
此外,該重排馬賽克處理例如可於行處理電路23內執行,亦可於信號處理部26內執行,還可於影像感測器10外之例如處理器13內執行。惟,於以自像素陣列部321讀出之圖像資料中之像素排列與像素陣列部321之實際之像素排列一致之方式驅動像素陣列部321之情形下,可省略上述之重排馬賽克處理。In addition, the remosaic processing can be executed in the row processing circuit 23, the signal processing unit 26, or outside the image sensor 10, such as the processor 13. However, when the pixel array unit 321 is driven in such a manner that the pixel arrangement in the image data read out from the pixel array unit 321 is consistent with the actual pixel arrangement of the pixel array unit 321, the above-mentioned rearrangement mosaic processing may be omitted.
其他構成、動作及效果由於可與上述之實施形態同樣,故此處省略詳細之說明。Since other structures, operations, and effects are the same as those in the above-described embodiment, detailed descriptions are omitted here.
3.1 變化例 如上述之第3實施形態般,電荷蓄積時間不同之像素30S以遍及上下複數列互不相鄰之方式排列於斜向方向之構成,不限於如上述之第2實施形態所例示之如圖35所示之具備將電荷蓄積時間不同之單色之像素(於本例中為電荷蓄積時間不同之W像素30WS及30WL)於上下左右交替排列之構造(例如參照圖32或圖33)之像素陣列部321A,例如,對於如圖36~圖39所例示之將排列於斜向方向之同色像素相加之構成(參照上述之第2實施形態)亦為合用。 3.1 Variation examples As in the above-mentioned third embodiment, the pixels 30S having different charge accumulation times are arranged in the diagonal direction in a non-adjacent manner throughout the upper and lower plurality of columns. The pixel array shown has a structure in which monochromatic pixels with different charge accumulation times (in this example, W pixels 30WS and 30WL with different charge accumulation times) are alternately arranged up, down, left, and right (see, for example, FIG. 32 or FIG. 33 ). For example, the portion 321A is also applicable to a structure in which pixels of the same color arranged in the diagonal direction are added together as shown in FIGS. 36 to 39 (refer to the above-mentioned second embodiment).
此外,圖36所例示之像素陣列部321B與於第2實施形態中使用圖21所說明之像素陣列部221同樣地,具備R像素30R、G像素30G、及B像素30B分別排列於斜向方向之像素配置構造。In addition, the pixel array section 321B illustrated in FIG. 36 is equipped with R pixels 30R, G pixels 30G, and B pixels 30B, which are respectively arranged in the oblique direction, similarly to the pixel array section 221 explained using FIG. 21 in the second embodiment. The pixel configuration structure.
圖37所例示之像素陣列部321C具備以於第1實施形態中使用圖8所說明之四倍拜耳排列為基本單元之像素配置構造。The pixel array section 321C illustrated in FIG. 37 has a pixel arrangement structure using the quadruple Bayer arrangement described using FIG. 8 in the first embodiment as a basic unit.
圖38所例示之像素陣列部321D與作為第2實施形態之第1變化例且使用圖23所說明之像素陣列部221A同樣地,具備除了R像素30R、G像素30G及B像素30B以外,W像素30W亦分別排列於斜向方向之像素配置構造。The pixel array section 321D illustrated in FIG. 38 is equipped with, in addition to the R pixel 30R, the G pixel 30G, and the B pixel 30B, W The pixels 30W are also arranged in a pixel arrangement structure in an oblique direction.
圖39所例示之像素陣列部321E與作為第2實施形態之第2變化例且使用圖24所說明之像素陣列部221B同樣地,具備除了R像素30R、G像素30G及B像素30B以外,IR像素30IR亦分別排列於斜向方向之像素配置構造。The pixel array section 321E illustrated in FIG. 39 is equipped with an IR pixel in addition to the R pixel 30R, the G pixel 30G, and the B pixel 30B, similarly to the pixel array section 221B explained using FIG. 24 as a second modification example of the second embodiment. The pixels 30IR are also arranged in a pixel arrangement structure in an oblique direction.
如此,將一條像素驅動線LD連接於複數列之像素30之構成對於將加算對象之同色像素遍及複數列地配置於斜向方向之像素配置構造,亦為合用。而且,藉由將一條像素驅動線LD連接於複數列之像素30之構成對於將加算對象之同色像素遍及複數列地配置於斜向方向之像素配置構造應用,而可縮小像素節距,故而可取得解析度高之更高畫質之圖像。此外,可應用將一條像素驅動線LD連接於複數列之像素30之構成之像素配置構造不限定於上述之例,可進行各種變化。In this way, the structure in which one pixel drive line LD is connected to the pixels 30 in a plurality of columns is also applicable to a pixel arrangement structure in which pixels of the same color to be added are arranged in a diagonal direction throughout a plurality of columns. Furthermore, the configuration in which one pixel driving line LD is connected to the pixels 30 in a plurality of columns can be applied to a pixel arrangement structure in which pixels of the same color to be added are arranged in a diagonal direction throughout a plurality of columns, so that the pixel pitch can be reduced, so that the pixel pitch can be reduced. Get higher quality images with high resolution. In addition, the pixel arrangement structure in which one pixel driving line LD is connected to a plurality of columns of pixels 30 is not limited to the above example, and can be variously modified.
4. 對於智慧型手機之應用例 本揭示之技術(本技術)可進一步對於各種產品應用。例如,本揭示之技術可應用於智慧型手機等。為此,參照圖40,說明作為應用本技術之電子機器之智慧型手機900之構成例。圖40係顯示可應用本揭示之技術(本技術)之智慧型手機900之概略性功能構成之一例之方塊圖。 4. Application examples for smartphones The technology disclosed herein (the technology) can further be applied to a variety of products. For example, the technology disclosed herein can be applied to smartphones and the like. To this end, a structural example of a smartphone 900 as an electronic device to which the present technology is applied will be described with reference to FIG. 40 . FIG. 40 is a block diagram showing an example of a schematic functional configuration of a smartphone 900 to which the technology of the present disclosure (the present technology) can be applied.
如圖40所示,智慧型手機900包含CPU(Central Processing Unit,中央處理單元)901、ROM(Read Only Memory,唯讀記憶體)902、及RAM(Random Access Memory,隨機存取記憶體)903。又,智慧型手機900包含:儲存裝置904、通訊模組905、及感測器模組907。進而,智慧型手機900包含:攝像裝置1、顯示裝置910、揚聲器911、麥克風912、輸入裝置913、及匯流排914。又,智慧型手機900可取代CPU 901、或與其一起具有DSP(Digital Signal Processor,數位信號處理器)等處理電路。As shown in Figure 40, a smartphone 900 includes a CPU (Central Processing Unit) 901, a ROM (Read Only Memory) 902, and a RAM (Random Access Memory) 903 . In addition, the smart phone 900 includes a storage device 904, a communication module 905, and a sensor module 907. Furthermore, the smartphone 900 includes the camera device 1 , a display device 910 , a speaker 911 , a microphone 912 , an input device 913 , and a bus 914 . In addition, the smartphone 900 may replace the CPU 901 or have a processing circuit such as a DSP (Digital Signal Processor) together with the CPU 901 .
CPU 901作為運算處理裝置及控制裝置發揮功能,依照記錄於ROM 902、RAM 903、或儲存裝置904等之各種程式,控制智慧型手機900內之所有動作或其一部分。ROM 902記憶CPU 901使用之程式及運算參數等。RAM 903暫時儲存在CPU 901之執行中使用之程式、及在其執行中適宜變化之參數等。CPU 901、ROM 902、及RAM 903藉由匯流排914而被相互連接。又,儲存裝置904係作為智慧型手機900之記憶部之一例而構成之資料儲存用之裝置。儲存裝置904例如由HDD(Hard Disk Drive,硬碟機)等磁性記憶裝置、半導體記憶裝置、光記憶裝置等構成。該儲存裝置904儲存CPU 901執行之程式及各種資料、及自外部取得之各種資料等。The CPU 901 functions as a computing processing device and a control device, and controls all operations or part thereof in the smartphone 900 according to various programs recorded in the ROM 902, RAM 903, or storage device 904, etc. The ROM 902 stores programs and operation parameters used by the CPU 901. The RAM 903 temporarily stores programs used in the execution of the CPU 901, parameters appropriately changed during its execution, and the like. The CPU 901, ROM 902, and RAM 903 are connected to each other through a bus 914. In addition, the storage device 904 is a data storage device configured as an example of the memory unit of the smartphone 900 . The storage device 904 is composed of, for example, a magnetic memory device such as an HDD (Hard Disk Drive), a semiconductor memory device, an optical memory device, or the like. The storage device 904 stores programs and various data executed by the CPU 901, as well as various data obtained from the outside.
通訊模組905例如係由用於連接於通訊網路906之通訊裝置等構成之通訊介面。通訊模組905例如可為有線或無線LAN(Local Area Network,區域網路)、藍芽(Bluetooth)(註冊商標)、WUSB(Wireless USB,無線USB)用之通訊卡等。又,通訊模組905可為光通訊用之路由器、ADSL(Asymmetric Digital Subscriber Line,非對稱數位用戶線)用之路由器、或各種通訊用之數據機等。通訊模組905例如在與網際網路或其他之通訊機器之間,利用TCP(Transmission Control Protocol,傳輸控制協定)/IP(Internet Protocol,網際網路協定)等特定之協定收發信號等。又,連接於通訊模組905之通訊網路906為藉由有線或無線而連接之網路,例如為網際網路、家庭內LAN、紅外線通訊或衛星通訊等。The communication module 905 is, for example, a communication interface composed of communication devices used to connect to the communication network 906 . The communication module 905 may be, for example, a communication card for wired or wireless LAN (Local Area Network), Bluetooth (registered trademark), WUSB (Wireless USB, Wireless USB), etc. In addition, the communication module 905 can be a router for optical communication, a router for ADSL (Asymmetric Digital Subscriber Line, asymmetric digital subscriber line), or a modem for various communications, etc. For example, the communication module 905 uses specific protocols such as TCP (Transmission Control Protocol)/IP (Internet Protocol) to send and receive signals with the Internet or other communication machines. In addition, the communication network 906 connected to the communication module 905 is a network connected by wire or wireless, such as the Internet, home LAN, infrared communication or satellite communication, etc.
感測器模組907例如包含運動感測器(例如加速度感測器、陀螺儀感測器、地磁感測器等)、生物體資訊感測器(例如脈搏感測器、血壓感測器、指紋感測器等)、或位置感測器(例如GNSS(Global Navigation Satellite System,全球導航衛星系統)接收機等)等各種感測器。The sensor module 907 includes, for example, motion sensors (such as acceleration sensors, gyroscope sensors, geomagnetic sensors, etc.), biological information sensors (such as pulse sensors, blood pressure sensors, Various sensors such as fingerprint sensors, etc.), or position sensors (such as GNSS (Global Navigation Satellite System) receivers, etc.).
攝像裝置1設置於智慧型手機900之正面,可拍攝位於智慧型手機900之背側或正側之對象物等。詳細而言,攝像裝置1係可包含可應用本揭示之技術(本技術)之CMOS(Complementary MOS,互補MOS)影像感測器等攝像元件(省略圖示)、及對以攝像元件進行光電轉換後之信號施以攝像信號處理之信號處理電路(省略圖示)而構成。進而,攝像裝置1可進一步具有:由攝像透鏡、變焦透鏡、及對焦透鏡等構成之光學系統機構(省略圖示)、及控制上述光學系統機構之動作之驅動系統機構(省略圖示)。而且,上述攝像元件將來自對象物之入射光集光為光學像,上述信號處理電路藉由以像素單位將經成像之光學像進行光電轉換,將各像素之信號作為攝像信號讀出並進行圖像處理,而可取得攝像圖像。The camera device 1 is installed on the front of the smartphone 900 and can capture objects located on the back or front of the smartphone 900 . Specifically, the imaging device 1 may include an imaging element (not shown) such as a CMOS (Complementary MOS, complementary MOS) image sensor to which the technology of the present disclosure (this technology) can be applied, and photoelectric conversion of the imaging element. The latter signal is formed by applying a signal processing circuit (not shown) for imaging signal processing. Furthermore, the imaging device 1 may further include an optical system mechanism (not shown) composed of an imaging lens, a zoom lens, a focus lens, and the like, and a drive system mechanism (not shown) that controls the operation of the optical system mechanism. Furthermore, the above-mentioned imaging element collects the incident light from the object into an optical image, and the above-mentioned signal processing circuit performs photoelectric conversion on the formed optical image in units of pixels, reads out the signal of each pixel as an imaging signal, and performs image processing. image processing to obtain camera images.
顯示裝置910設置於智慧型手機900之正面,例如,可為LCD(Liquid Crystal Display,液晶顯示器)、有機EL(Electro Luminescence,電激發光)顯示器等顯示裝置。顯示裝置910可顯示操作畫面、及上述之攝像裝置1所取得之攝像圖像等。The display device 910 is disposed on the front of the smart phone 900, and may be, for example, an LCD (Liquid Crystal Display), an organic EL (Electro Luminescence) display, or other display device. The display device 910 can display the operation screen, the photographed image obtained by the above-mentioned imaging device 1, and the like.
揚聲器911係例如可向使用者輸出通話聲音、或附隨於上述之顯示裝置910顯示之映像內容之聲音等。The speaker 911 may, for example, output a call sound to the user, or a sound accompanying the image content displayed on the display device 910 , or the like.
麥克風912例如可採集使用者之通話聲音、包含啟動智慧型手機900之功能之指令之聲音、或智慧型手機900之周圍環境之聲音。The microphone 912 may, for example, collect the user's call sound, the sound including instructions for activating functions of the smartphone 900 , or the sounds of the surrounding environment of the smartphone 900 .
輸入裝置913例如為按鈕、鍵盤、觸控面板、滑鼠等由使用者操作之裝置。輸入裝置913包含基於使用者輸入之資訊產生輸入信號,並輸出至CPU 901之輸入控制電路。使用者藉由操作該輸入裝置913,而可對智慧型手機900輸入各種資料、及指示處理動作。The input device 913 is, for example, a button, keyboard, touch panel, mouse, or other device operated by the user. The input device 913 includes an input control circuit that generates an input signal based on information input by the user and outputs it to the CPU 901 . By operating the input device 913, the user can input various data and instruct processing actions to the smartphone 900.
以上,顯示了智慧型手機900之構成例。上述之各構成要素可利用泛用之構件來構成,亦可藉由特化用於各構成要素之功能之硬體來構成。上述之構成可相應於實施之時之技術水平而適宜變更。The above shows an example of the configuration of the smartphone 900 . Each of the above-mentioned components may be constructed using general-purpose components, or may be constructed using hardware specialized for the functions of each component. The above-mentioned structure can be appropriately changed according to the technical level at the time of implementation.
5. 對於移動體之應用例 本揭示之技術(本技術)可應用於各種產品。例如,本揭示之技術可作為搭載於汽車、電動汽車、油電混合汽車、機車、自行車、個人移動性裝置、飛機、無人機、船舶、機器人等任一種類之移動體之裝置而實現。 5. Application examples for moving objects The technology disclosed herein (the technology) can be applied to a variety of products. For example, the technology disclosed in the present disclosure can be implemented as a device mounted on any type of mobile object such as cars, electric cars, hybrid cars, motorcycles, bicycles, personal mobility devices, airplanes, drones, ships, and robots.
圖41係顯示作為可應用本揭示之技術之移動體控制系統之一例之車輛控制系統之概略性構成例之方塊圖。41 is a block diagram showing a schematic configuration example of a vehicle control system as an example of a mobile body control system to which the technology of the present disclosure can be applied.
車輛控制系統12000具備經由通信網路12001連接之複數個電子控制單元。在圖41所示之例中,車輛控制系統12000具備:驅動系統控制單元12010、車體系統控制單元12020、車外資訊檢測單元12030、車內資訊檢測單元12040、及整合控制單元12050。又,作為整合控制單元12050之功能構成,圖示微電腦12051、聲音圖像輸出部12052、及車載網路I/F(Interface,介面)12053。The vehicle control system 12000 includes a plurality of electronic control units connected via a communication network 12001. In the example shown in FIG. 41 , the vehicle control system 12000 includes a drive system control unit 12010 , a vehicle body system control unit 12020 , an exterior information detection unit 12030 , an interior information detection unit 12040 , and an integrated control unit 12050 . In addition, as the functional configuration of the integrated control unit 12050, a microcomputer 12051, an audio and video output unit 12052, and an in-vehicle network I/F (Interface) 12053 are shown.
驅動系統控制單元12010依照各種程式控制與車輛之驅動系統關聯之裝置之動作。例如,驅動系統控制單元12010作為內燃機或驅動用馬達等用於產生車輛之驅動力之驅動力產生裝置、用於將驅動力傳遞至車輪之驅動力傳遞機構、調節車輛之舵角之轉向機構、及產生車輛之制動力之制動裝置等的控制裝置而發揮功能。The drive system control unit 12010 controls the actions of devices associated with the vehicle's drive system according to various programs. For example, the drive system control unit 12010 serves as a driving force generating device for generating the driving force of the vehicle such as an internal combustion engine or a driving motor, a driving force transmission mechanism for transmitting the driving force to the wheels, a steering mechanism for adjusting the rudder angle of the vehicle, And the control device of the braking device that generates the braking force of the vehicle functions.
車體系統控制單元12020依照各種程式控制裝備於車體之各種裝置之動作。例如,車體系統控制單元12020作為無鑰匙門禁系統、智慧型鑰匙系統、電動車窗裝置、或頭燈、尾燈、煞車燈、方向燈或霧燈等各種燈之控制裝置發揮功能。該情形下,可對車體系統控制單元12020輸入自代替鑰匙之可攜式機發出之電波或各種開關之信號。車體系統控制單元12020受理該等電波或信號之輸入,控制車輛之門鎖裝置、電動車窗裝置、燈等。The vehicle body system control unit 12020 controls the operations of various devices equipped on the vehicle body according to various programs. For example, the vehicle body system control unit 12020 functions as a control device for a keyless entry system, a smart key system, an electric window device, or various lights such as headlights, taillights, brake lights, direction lights, or fog lights. In this case, radio waves or signals from various switches emitted from a portable device that replaces the key can be input to the vehicle body system control unit 12020. The vehicle body system control unit 12020 accepts the input of such radio waves or signals and controls the door lock device, electric window device, lights, etc. of the vehicle.
車外資訊檢測單元12030檢測搭載車輛控制系統12000之車輛外部之資訊。例如,於車外資訊檢測單元12030連接有攝像部12031。車外資訊檢測單元12030使攝像部12031拍攝車外之圖像,且接收拍攝到之圖像。車外資訊檢測單元12030可基於接收到之圖像,進行人、車、障礙物、標識或路面上之文字等之物體檢測處理或距離檢測處理。The vehicle exterior information detection unit 12030 detects information outside the vehicle equipped with the vehicle control system 12000. For example, the camera unit 12031 is connected to the vehicle exterior information detection unit 12030. The vehicle exterior information detection unit 12030 causes the camera unit 12031 to capture images of the exterior of the vehicle and receives the captured images. The off-vehicle information detection unit 12030 can perform object detection processing or distance detection processing of people, vehicles, obstacles, signs, or text on the road based on the received images.
攝像部12031係接收光且輸出與該光之受光量相應之電信號之光感測器。攝像部12031可將電信號作為圖像而輸出,亦可作為測距之資訊而輸出。又,攝像部12031所接收之光可為可見光,也可為紅外線等之非可見光。The imaging unit 12031 is a photo sensor that receives light and outputs an electrical signal corresponding to the received amount of light. The imaging unit 12031 can output the electrical signal as an image or as distance measurement information. In addition, the light received by the imaging unit 12031 may be visible light or invisible light such as infrared rays.
車內資訊檢測單元12040檢測車內之資訊。於車內資訊檢測單元12040例如連接有檢測駕駛者之狀態之駕駛者狀態檢測部12041。駕駛者狀態檢測部12041包含例如拍攝駕駛者之相機,車內資訊檢測單元12040基於自駕駛者狀態檢測部12041輸入之檢測資訊,可算出駕駛者之疲勞度或注意力集中度,亦可判別駕駛者是否打瞌睡。The in-vehicle information detection unit 12040 detects the information in the vehicle. For example, the in-vehicle information detection unit 12040 is connected to a driver status detection unit 12041 that detects the driver's status. The driver's state detection unit 12041 includes, for example, a camera that takes pictures of the driver. The in-vehicle information detection unit 12040 can calculate the driver's fatigue or concentration based on the detection information input from the driver's state detection unit 12041, and can also determine driving Whether the person dozed off.
微電腦12051可基於由車外資訊檢測單元12030或車內資訊檢測單元12040取得之車內外之資訊,運算驅動力產生裝置、轉向機構或制動裝置之控制目標值,且對驅動系統控制單元12010輸出控制指令。例如,微電腦12051可進行以實現包含車輛之避免碰撞或緩和衝擊、基於車距之追隨行駛、車速維持行駛、車輛之碰撞警告、或車輛之車道偏離警告等的ADAS(Advanced Driver Assistance Systems,先進駕駛輔助系統)之功能為目的之協調控制。The microcomputer 12051 can calculate the control target value of the driving force generating device, the steering mechanism or the braking device based on the information inside and outside the vehicle obtained by the vehicle exterior information detection unit 12030 or the vehicle interior information detection unit 12040, and output a control command to the drive system control unit 12010 . For example, the microcomputer 12051 can implement ADAS (Advanced Driver Assistance Systems, advanced driving) including vehicle collision avoidance or impact mitigation, following driving based on vehicle distance, vehicle speed maintenance, vehicle collision warning, or vehicle lane departure warning, etc. The function of the auxiliary system is coordinated control for the purpose.
又,微電腦12051藉由基於由車外資訊檢測單元12030或車內資訊檢測單元12040取得之車輛之周圍之資訊而控制驅動力產生裝置、轉向機構或制動裝置等,而可進行以不依賴駕駛者之操作而自律行駛之自動駕駛等為目的之協調控制。In addition, the microcomputer 12051 controls the driving force generating device, the steering mechanism, the braking device, etc. based on the information around the vehicle acquired by the vehicle exterior information detection unit 12030 or the vehicle interior information detection unit 12040, thereby making it possible to perform operations that do not rely on the driver. Coordinated control for the purpose of autonomous driving and autonomous driving.
又,微電腦12051可基於由車外資訊檢測單元12030取得之車外之資訊,對車體系統控制單元12020輸出控制指令。例如,微電腦12051可進行根據由車外資訊檢測單元12030檢測出之前方車或對向車之位置而控制頭燈,而將遠光燈切換為近光燈等之以謀求防眩為目的之協調控制。In addition, the microcomputer 12051 can output control instructions to the vehicle body system control unit 12020 based on the information outside the vehicle obtained by the vehicle outside information detection unit 12030. For example, the microcomputer 12051 can perform coordinated control for the purpose of anti-glare, such as controlling the headlights based on the position of the vehicle ahead or the oncoming vehicle detected by the vehicle exterior information detection unit 12030, and switching the high beam to low beam. .
聲音圖像輸出部12052朝可針對車輛之乘客或車外以視覺性或聽覺性通知資訊之輸出裝置,發送聲音及圖像中至少一者之輸出信號。在圖41之例中,作為輸出裝置,例示有音訊揚聲器12061、顯示部12062及儀表板12063。顯示部12062例如可包含車載顯示器及抬頭顯示器之至少一者。The sound and image output unit 12052 sends an output signal of at least one of sound and image to an output device capable of visually or audibly notifying information to passengers of the vehicle or outside the vehicle. In the example of FIG. 41 , an audio speaker 12061, a display unit 12062, and an instrument panel 12063 are illustrated as output devices. The display portion 12062 may include, for example, at least one of a vehicle-mounted display and a head-up display.
圖42係顯示攝像部12031之設置位置之例之圖。FIG. 42 is a diagram showing an example of the installation position of the imaging unit 12031.
於圖42中,具有攝像部12101、12102、12103、12104、12105作為攝像部12031。In FIG. 42 , imaging units 12101, 12102, 12103, 12104, and 12105 are provided as the imaging unit 12031.
攝像部12101、12102、12103、12104、12105例如設置於車輛12100之前保險桿、後照鏡、後保險桿、尾門及車廂內之擋風玻璃之上部等位置。前保險桿所具備之攝像部12101及車廂內之擋風玻璃之上部所具備之攝像部12105主要取得車輛12100前方之圖像。後照鏡所具備之攝像部12102、12103主要取得車輛12100側方之圖像。後保險桿或尾門所具備之攝像部12104主要取得車輛12100後方之圖像。車廂內之擋風玻璃之上部所具備之攝像部12105主要用於前方車輛或行人、障礙物、號誌機、交通標誌或車道線等之檢測。The camera units 12101, 12102, 12103, 12104, and 12105 are, for example, disposed at positions such as the front bumper, rear mirror, rear bumper, tailgate, and upper part of the windshield in the cabin of the vehicle 12100. The camera unit 12101 provided on the front bumper and the camera unit 12105 provided on the upper part of the windshield in the vehicle cabin mainly acquire images of the front of the vehicle 12100. The camera units 12102 and 12103 provided in the rear view mirror mainly acquire images of the side of the vehicle 12100. The camera unit 12104 provided in the rear bumper or tailgate mainly acquires images of the rear of the vehicle 12100 . The camera unit 12105 provided on the upper part of the windshield in the car is mainly used to detect vehicles or pedestrians in front, obstacles, traffic signals, traffic signs or lane lines, etc.
再者,在圖42中,顯示攝像部12101至12104之攝像範圍之一例。攝像範圍12111表示設置於前保險桿之攝像部12101之攝像範圍,攝像範圍12112、12113表示分別設置於後照鏡之攝像部12102、12103之攝像範圍,攝像範圍12114表示設置於後保險桿或尾門之攝像部12104之攝像範圍。例如,藉由重疊由攝像部12101至12104拍攝之圖像資料,可獲得自上方觀察車輛12100之俯瞰圖像。Furthermore, FIG. 42 shows an example of the imaging range of the imaging units 12101 to 12104. The camera range 12111 represents the camera range of the camera unit 12101 provided on the front bumper, the camera ranges 12112 and 12113 represent the camera ranges of the camera units 12102 and 12103 respectively provided on the rear view mirror, and the camera range 12114 represents the camera range provided on the rear bumper or tailgate. The camera range of the door camera unit 12104. For example, by overlapping the image data captured by the imaging units 12101 to 12104, an overhead image of the vehicle 12100 viewed from above can be obtained.
攝像部12101至12104之至少1者可具有取得距離資訊之功能。例如,攝像部12101至12104之至少1者可為包含複數個攝像元件之立體攝影機,亦可為具有相位差檢測用之像素之攝像元件。At least one of the imaging units 12101 to 12104 may have a function of acquiring distance information. For example, at least one of the imaging units 12101 to 12104 may be a stereo camera including a plurality of imaging elements, or may be an imaging element having pixels for phase difference detection.
例如,微電腦12051藉由基於自攝像部12101至12104獲得之距離資訊,求得與攝像範圍12111至12114內之各立體物相隔之距離、及該距離之時間性變化(對於車輛12100之相對速度),而可尤其將位於車輛12100之行進路上最近之立體物、且為在與車輛12100大致相同之方向以特定之速度(例如,0 km/h以上)行駛之立體物擷取作為前方車。進而,微電腦12051可設定針對前方車於近前應預先確保之車距,進行自動煞車控制(亦包含停止追隨控制)、自動加速控制(亦包含追隨起步控制)等。如此般可進行以不依賴駕駛者之操作而自律行駛之自動駕駛等為目的之協調控制。For example, the microcomputer 12051 obtains the distance to each three-dimensional object within the imaging range 12111 to 12114 and the temporal change of the distance (relative speed to the vehicle 12100) based on the distance information obtained from the imaging units 12101 to 12104. , and in particular, the nearest three-dimensional object located on the traveling path of the vehicle 12100 and traveling in approximately the same direction as the vehicle 12100 at a specific speed (for example, 0 km/h or more) can be captured as the preceding vehicle. Furthermore, the microcomputer 12051 can set the distance between vehicles ahead that should be ensured in advance, and perform automatic braking control (including stop following control), automatic acceleration control (including following start control), etc. In this way, coordinated control can be carried out for the purpose of autonomous driving that does not rely on the driver's operation.
例如,微電腦12051可基於自攝像部12101至12104取得之距離資訊,將與立體物相關之立體物資料分類為機車、普通車輛、大型車輛、行人、電線桿等其他立體物而加以擷取,用於自動躲避障礙物。例如,微電腦12051可將車輛12100周邊之障礙物辨識為車輛12100之駕駛員可視認之障礙物及難以視認之障礙物。且,微電腦12051判斷表示與各障礙物碰撞之危險度之碰撞風險,當遇到碰撞風險為設定值以上而有可能發生碰撞之狀況時,藉由經由音訊揚聲器12061或顯示部12062對駕駛員輸出警報,或經由驅動系統控制單元12010進行強制減速或迴避操舵,而可進行用於避免碰撞之駕駛支援。For example, the microcomputer 12051 can classify the three-dimensional object data related to the three-dimensional object into other three-dimensional objects such as motorcycles, ordinary vehicles, large vehicles, pedestrians, telephone poles, etc. based on the distance information obtained from the camera units 12101 to 12104. to automatically avoid obstacles. For example, the microcomputer 12051 can identify obstacles around the vehicle 12100 as obstacles that are visible to the driver of the vehicle 12100 and obstacles that are difficult to see. Furthermore, the microcomputer 12051 determines the collision risk indicating the risk of collision with each obstacle, and when encountering a situation where the collision risk is above a set value and a collision is likely to occur, it outputs an output to the driver through the audio speaker 12061 or the display unit 12062 Alarm, or forced deceleration or avoidance steering through the drive system control unit 12010, and driving support for avoiding collisions can be performed.
攝像部12101至12104之至少1個可為檢測紅外線之紅外線相機。例如,微電腦12051可藉由判定在攝像部12101至12104之攝像圖像中是否存在有行人而辨識行人。如此之行人之辨識藉由例如擷取作為紅外線相機之攝像部12101至12104之攝像圖像之特徵點之程序、及針對表示物體之輪廓之一系列特徵點進行圖案匹配處理而判別是否為行人之程序而進行。當微電腦12051判定為在攝像部12101至12104之攝像圖像中存在有行人,且辨識行人時,聲音圖像輸出部12052以對該被辨識出之行人重疊顯示用於強調之方形輪廓線之方式控制顯示部12062。又,聲音圖像輸出部12052亦可控制顯示部12062而將顯示行人之圖標等顯示於所期望之位置。At least one of the imaging units 12101 to 12104 may be an infrared camera that detects infrared rays. For example, the microcomputer 12051 can identify pedestrians by determining whether there are pedestrians in the captured images of the imaging units 12101 to 12104. Such identification of pedestrians is performed by, for example, a program that captures feature points of the image captured by the imaging units 12101 to 12104 of the infrared camera, and performs pattern matching processing on a series of feature points representing the outline of the object to determine whether the pedestrian is a pedestrian. proceed with the procedure. When the microcomputer 12051 determines that there is a pedestrian in the image captured by the imaging units 12101 to 12104 and recognizes the pedestrian, the audio image output unit 12052 displays a square outline for emphasis overlaid on the recognized pedestrian. Control display unit 12062. In addition, the audio image output unit 12052 may control the display unit 12062 to display an icon or the like showing pedestrians at a desired position.
以上,說明了可適用本揭示之技術之移動體控制系統之一例。本揭示之技術可適用於以上所說明之構成中之例如攝像部12031。由於藉由對攝像部12031應用本發明之技術,可獲得更易於觀察之攝影圖像,故能夠減輕駕駛員之疲勞。The above has described an example of a mobile body control system to which the technology of the present disclosure is applicable. The technology of the present disclosure can be applied to, for example, the imaging unit 12031 in the structure described above. By applying the technology of the present invention to the imaging unit 12031, a photographic image that is easier to observe can be obtained, thereby reducing driver fatigue.
6. 對於內視鏡手術系統之應用例 本揭示之技術(本技術)可對於各種產品應用。例如,本發明之技術可應用於內視鏡手術系統。 6. Application examples of endoscopic surgery system The technology disclosed herein (the technology) can be applied to a variety of products. For example, the technology of the present invention may be applied to endoscopic surgical systems.
圖43係顯示可應用本揭示之技術(本技術)之內視鏡手術系統之概略性構成之一例之圖。FIG. 43 is a diagram showing an example of the schematic configuration of an endoscopic surgery system to which the technology of the present disclosure (the present technology) can be applied.
於圖43中,圖示施術者(醫師)11131使用內視鏡手術系統11000,對病床11133上之患者11132進行手術狀況。如圖示般,內視鏡手術系統11000包含:內視鏡11100、氣腹管11111或能量處置具11112等其他手術器具11110、支持內視鏡11100之支持臂裝置11120、及搭載有用於內視鏡下手術之各種裝置之手推車11200。In FIG. 43 , the operator (physician) 11131 uses the endoscopic surgery system 11000 to perform surgery on the patient 11132 on the hospital bed 11133 . As shown in the figure, the endoscopic surgery system 11000 includes: an endoscope 11100, a tracheostomy tube 11111 or an energy treatment device 11112 and other surgical instruments 11110, a support arm device 11120 that supports the endoscope 11100, and a device for endoscopic surgery. Trolley 11200 with various devices for microscopic surgery.
內視鏡11100包含:鏡筒11101,其自前端起特定長度之區域插入患者11132之體腔內;及相機頭11102,其連接於鏡筒11101之基端。在圖示之例中,圖示構成為具有硬性鏡筒11101之所謂硬性鏡之內視鏡11100,但內視鏡11100亦可構成為具有軟性鏡筒之所謂軟性鏡。The endoscope 11100 includes: a lens barrel 11101, a region of a specific length from the front end of which is inserted into the body cavity of the patient 11132; and a camera head 11102, which is connected to the base end of the lens barrel 11101. In the illustrated example, the endoscope 11100 is configured as a so-called rigid endoscope having a rigid barrel 11101. However, the endoscope 11100 may also be configured as a so-called flexible endoscope having a soft barrel 11101.
在鏡筒11101之前端設置有嵌入有物鏡之開口部。於內視鏡11100連接有光源裝置11203,由該光源裝置11203產生之光由在鏡筒11101之內部延伸設置之光導件導光至該鏡筒之前端,並經由物鏡向患者11132之體腔內之觀察對象照射。再者,內視鏡11100可為直視鏡,亦可為斜視鏡或側視鏡。The front end of the lens barrel 11101 is provided with an opening in which an objective lens is embedded. A light source device 11203 is connected to the endoscope 11100. The light generated by the light source device 11203 is guided to the front end of the lens barrel by a light guide extending inside the lens barrel 11101, and is directed to the body cavity of the patient 11132 through the objective lens. Observe subject irradiation. Furthermore, the endoscope 11100 can be a straight-view mirror, a strabismus mirror or a side-view mirror.
在相機頭11102之內部設置有光學系統及攝像元件,來自觀察對象之反射光(觀察光)由該光學系統集光於該攝像元件。藉由該攝像元件對觀察光進行光電轉換,而產生與觀察光對應之電信號、即與觀察像對應之圖像信號。該圖像信號作為RAW資料被發送至相機控制單元(CCU:Camera Control Unit)11201。An optical system and an imaging element are provided inside the camera head 11102, and the reflected light (observation light) from the observation object is collected by the optical system on the imaging element. The imaging element photoelectrically converts the observation light to generate an electrical signal corresponding to the observation light, that is, an image signal corresponding to the observation image. This image signal is sent to the camera control unit (CCU: Camera Control Unit) 11201 as RAW data.
CCU 11201包含CPU(Central Processing Unit,中央處理器)或GPU(Graphics Processing Unit,圖形處理器)等,統括地控制內視鏡11100及顯示裝置11202之動作。進而,CCU 11201自相機頭11102接收圖像信號,對該圖像信號實施例如顯影處理(解馬賽克處理)等用於顯示基於該圖像信號之圖像之各種圖像處理。The CCU 11201 includes a CPU (Central Processing Unit, central processing unit) or a GPU (Graphics Processing Unit, graphics processing unit), etc., and collectively controls the operations of the endoscope 11100 and the display device 11202. Furthermore, the CCU 11201 receives an image signal from the camera head 11102 and performs various image processing on the image signal for displaying an image based on the image signal, such as development processing (demosaic processing).
顯示裝置11202藉由來自CCU 11201之控制而顯示基於由該CCU 11201實施圖像處理後之圖像信號的圖像。The display device 11202 displays an image based on an image signal subjected to image processing by the CCU 11201 under control from the CCU 11201 .
光源裝置11203例如包含LED(Light emitting diode,發光二極體)等光源,將拍攝手術部位等時之照射光供給至內視鏡11100。The light source device 11203 includes, for example, a light source such as an LED (Light Emitting Diode), and supplies irradiation light when photographing a surgical site or the like to the endoscope 11100 .
輸入裝置11204係對於內視鏡手術系統11000之輸入介面。使用者可經由輸入裝置11204對於內視鏡手術系統11000進行各種資訊之輸入或指示輸入。例如,使用者輸入變更內視鏡11100之攝像條件(照射光之種類、倍率及焦距等)之意旨之指示等。The input device 11204 is an input interface for the endoscopic surgery system 11000. The user can input various information or instructions to the endoscopic surgery system 11000 through the input device 11204. For example, the user inputs an instruction to change the imaging conditions of the endoscope 11100 (type of irradiation light, magnification, focal length, etc.).
處置具控制裝置11205控制用於燒灼、切開組織或血管之封堵等之能量處置具11112之驅動。氣腹裝置11206出於確保內視鏡11100之視野及確保施術者之作業空間之目的,為了使患者11132之體腔膨脹,而經由氣腹管11111將氣體送入該體腔內。種形式予以印刷之裝置。記錄器11207係可記錄與手術相關之各種資訊之裝置。印表機11208係可將與手術相關之各種資訊以文字、圖像或圖表等各The treatment tool control device 11205 controls the driving of the energy treatment tool 11112 used for cauterization, incision of tissue, sealing of blood vessels, etc. For the purpose of ensuring the field of view of the endoscope 11100 and ensuring the operating space of the operator, the insufficiency device 11206 inflates the body cavity of the patient 11132, and sends gas into the body cavity through the insufficiency tube 11111. A device for printing in a form. The recorder 11207 is a device that can record various information related to surgery. Printer 11208 can convert various information related to surgery into text, images, charts, etc.
此外,對內視鏡11100供給拍攝手術部位時之照射光之光源裝置11203可包含例如LED、雷射光源或由該等之組合構成之白色光源。在由RGB雷射光源之組合構成白色光源時,由於可高精度地控制各色(各波長)之輸出強度及輸出時序,故在光源裝置11203中可進行攝像圖像之白平衡之調整。又,該情形下,藉由分時地對觀察對象照射來自RGB雷射光源各者之雷射光,與該照射時序同步地控制相機頭11102之攝像元件之驅動,而亦可分時地拍攝與RGB各者對應之圖像。根據該方法,即便於該攝像元件未設置彩色濾光器,亦可獲得彩色圖像。In addition, the light source device 11203 that provides illumination light to the endoscope 11100 when photographing the surgical site may include, for example, a white light source composed of an LED, a laser light source, or a combination thereof. When a white light source is constituted by a combination of RGB laser light sources, the output intensity and output timing of each color (each wavelength) can be controlled with high precision, so the white balance of the captured image can be adjusted in the light source device 11203. Furthermore, in this case, by irradiating the observation object with laser light from each of the RGB laser light sources in a time-sharing manner, and controlling the drive of the imaging element of the camera head 11102 in synchronization with the irradiation timing, it is also possible to capture and photograph in a time-sharing manner. RGB corresponding images. According to this method, a color image can be obtained even if the imaging element is not provided with a color filter.
又,光源裝置11203可以每隔特定之時間變更所輸出之光之強度之方式控制該驅動。藉由與該光之強度之變更之時序同步地控制相機頭11102之攝像元件之驅動且分時地取得圖像,且將該圖像合成,而可產生無所謂欠曝及過曝之高動態範圍之圖像。In addition, the light source device 11203 can control the driving in such a manner that the intensity of the light output is changed every specific time. By controlling the drive of the imaging element of the camera head 11102 in synchronization with the timing of changes in the intensity of light, acquiring images in a time-sharing manner, and synthesizing the images, a high dynamic range without underexposure and overexposure can be generated. image.
又,光源裝置11203可構成為可供給與特殊光觀察對應之特定之波長頻帶之光。在特殊光觀察中,例如,進行藉由利用生物體組織之光之吸收之波長依存性,照射與通常之觀察時之照射光(亦即,白色光)相比更窄頻帶之光,而高對比度地拍攝黏膜表層之血管等特定之組織之所謂窄頻帶光觀察(Narrow Band Imaging,內鏡窄帶成像術)。或,在特殊光觀察中,可進行利用藉由照射激發光產生之螢光而獲得圖像之螢光觀察。在螢光觀察中,可進行對生物體組織照射激發光而觀察來自該生物體組織之螢光(自身螢光觀察)、或對生物體組織局部注射靛氰綠(ICG)等之試劑且對該生物體組織照射與該試劑之螢光波長對應之激發光而獲得螢光像等。光源裝置11203可構成為可供給與如此之特殊光觀察對應之窄頻光及/或激發光。In addition, the light source device 11203 may be configured to supply light of a specific wavelength band corresponding to special light observation. In special light observation, for example, by utilizing the wavelength dependence of light absorption by biological tissues, light with a narrower frequency band is irradiated compared to the irradiation light (that is, white light) during normal observation, and high Endoscopic narrow-band imaging (Narrow Band Imaging) is a technique that captures specific tissues such as blood vessels on the mucosal surface with contrast. Alternatively, in special light observation, fluorescence observation using fluorescence generated by irradiation with excitation light to obtain an image can be performed. In fluorescence observation, the biological tissue can be irradiated with excitation light to observe the fluorescence from the biological tissue (autofluorescence observation), or a reagent such as indocyanine green (ICG) can be locally injected into the biological tissue and the The biological tissue is irradiated with excitation light corresponding to the fluorescence wavelength of the reagent to obtain a fluorescence image or the like. The light source device 11203 may be configured to provide narrow-band light and/or excitation light corresponding to such special light observation.
圖44係顯示圖43所示之相機頭11102及CCU 11201之功能構成之一例之方塊圖。FIG. 44 is a block diagram showing an example of the functional configuration of the camera head 11102 and CCU 11201 shown in FIG. 43 .
相機頭11102具有:透鏡單元11401、攝像部11402、驅動部11403、通訊部11404、及相機頭控制部11405。CCU 11201具有:通訊部11411、圖像處理部11412、及控制部11413。相機頭11102與CCU 11201由傳送纜線11400可相互通訊地連接。The camera head 11102 includes a lens unit 11401, an imaging unit 11402, a drive unit 11403, a communication unit 11404, and a camera head control unit 11405. The CCU 11201 includes a communication unit 11411, an image processing unit 11412, and a control unit 11413. The camera head 11102 and the CCU 11201 are communicatively connected by a transmission cable 11400.
透鏡單元11401係設置於與鏡筒11101之連接部之光學系統。自鏡筒11101之前端擷取入之觀察光被導光至相機頭11102,而入射至該透鏡單元11401。透鏡單元11401構成為組合有包含變焦透鏡及對焦透鏡之複數個透鏡。The lens unit 11401 is an optical system provided at a connection portion with the lens barrel 11101. The observation light captured from the front end of the lens barrel 11101 is guided to the camera head 11102 and then incident on the lens unit 11401. The lens unit 11401 is configured by combining a plurality of lenses including a zoom lens and a focus lens.
構成攝像部11402之攝像元件既可為1個(所謂之單板式),亦可為複數個(所謂之多板式)。在攝像部11402由多板式構成時,例如可藉由利用各攝像元件產生與RGB各者對應之圖像信號,且將其等合成,而獲得彩色圖像。或,攝像部11402亦可構成為具有用於分別取得與3D(Dimensional,維度)顯示對應之右眼用及左眼用之圖像信號的1對攝像元件。藉由進行3D顯示,而施術者11131可更準確地掌握手術部位之生物體組織之深度。此外,在攝像部11402由多板式構成時,亦可與各攝像元件對應地,將透鏡單元11401設置複數個系統。The imaging element constituting the imaging unit 11402 may be one (so-called single-board type) or a plurality of imaging elements (so-called multi-board type). When the imaging unit 11402 has a multi-plate structure, for example, a color image can be obtained by using each imaging element to generate an image signal corresponding to each of RGB and combining them. Alternatively, the imaging unit 11402 may be configured to include a pair of imaging elements for respectively acquiring right-eye and left-eye image signals corresponding to 3D (Dimensional) display. By performing 3D display, the operator 11131 can more accurately grasp the depth of the biological tissue at the surgical site. In addition, when the imaging unit 11402 is configured of a multi-plate type, a plurality of lens units 11401 may be provided corresponding to each imaging element.
又,攝像部11402可未必一定設置於相機頭11102。例如,攝像部11402可在鏡筒11101之內部設置於物鏡之正後方。In addition, the imaging unit 11402 does not necessarily need to be provided in the camera head 11102. For example, the imaging unit 11402 may be provided inside the lens barrel 11101 directly behind the objective lens.
驅動部11403係由致動器構成,藉由來自相機頭控制部11405之控制,使透鏡單元11401之變焦透鏡及對焦透鏡沿光軸移動特定之距離。藉此,可適宜地調整由攝像部11402拍攝之攝像圖像之倍率及焦點。The driving part 11403 is composed of an actuator, and moves the zoom lens and the focus lens of the lens unit 11401 by a specific distance along the optical axis under control from the camera head control part 11405. Thereby, the magnification and focus of the captured image captured by the imaging unit 11402 can be appropriately adjusted.
通訊部11404係由用於在與CCU 11201之間收發各種資訊之通訊裝置構成。通訊部11404將自攝像部11402獲得之圖像信號作為RAW資料經由傳送纜線11400發送至CCU 11201。The communication unit 11404 is composed of a communication device for sending and receiving various information to and from the CCU 11201. The communication unit 11404 sends the image signal obtained from the camera unit 11402 as RAW data to the CCU 11201 via the transmission cable 11400.
又,通訊部11404自CCU 11201接收用於控制相機頭11102之驅動之控制信號,並供給至相機頭控制部11405。在該控制信號中例如包含指定攝像圖像之訊框率之意旨之資訊、指定攝像時之曝光值之意旨之資訊、及/或指定攝像圖像之倍率及焦點之意旨之資訊等與攝像條件相關之資訊。In addition, the communication unit 11404 receives a control signal for controlling the driving of the camera head 11102 from the CCU 11201 and supplies it to the camera head control unit 11405. The control signal includes, for example, information that specifies the frame rate of the captured image, information that specifies the exposure value when capturing, and/or information that specifies the magnification and focus of the captured image, and the imaging conditions. Related information.
此外,上述之訊框率或曝光值、倍率、焦點等攝像條件可由使用者適宜地指定,亦可基於取得之圖像信號由CCU 11201之控制部11413自動設定。如為後者,需在內視鏡11100搭載所謂之AE(Auto Exposure,自動曝光)功能、AF(Auto Focus,自動對焦)功能及AWB(Auto White Balance,自動白平衡)功能。In addition, the above-mentioned imaging conditions such as frame rate, exposure value, magnification, and focus can be appropriately specified by the user, or can be automatically set by the control unit 11413 of the CCU 11201 based on the acquired image signal. If it is the latter, the endoscope 11100 needs to be equipped with the so-called AE (Auto Exposure, automatic exposure) function, AF (Auto Focus, automatic focus) function and AWB (Auto White Balance, automatic white balance) function.
相機頭控制部11405基於經由通訊部11404接收之來自CCU 11201之控制信號而控制相機頭11102之驅動。The camera head control unit 11405 controls the driving of the camera head 11102 based on the control signal received from the CCU 11201 via the communication unit 11404.
通訊部11411係由用於在與相機頭11102之間收發各種資訊之通訊裝置構成。通訊部11411接收自相機頭11102經由傳送纜線11400發送之圖像信號。The communication unit 11411 is composed of a communication device for sending and receiving various information to and from the camera head 11102 . The communication unit 11411 receives the image signal sent from the camera head 11102 via the transmission cable 11400.
又,通訊部11411對相機頭11102發送用於控制相機頭11102之驅動之控制信號。圖像信號或控制信號可藉由電性通訊或光通訊等發送。Furthermore, the communication unit 11411 sends a control signal for controlling the drive of the camera head 11102 to the camera head 11102 . Image signals or control signals can be sent through electrical communication or optical communication.
圖像處理部11412對自相機頭11102發送之作為RAW資料之圖像信號實施各種圖像處理。The image processing unit 11412 performs various image processing on the image signal sent as RAW data from the own camera 11102 .
控制部11413進行與內視鏡11100對手術部位等之攝像、及藉由手術部位等之攝像而獲得之攝像圖像之顯示相關之各種控制。例如,控制部11413產生用於控制相機頭11102之驅動之控制信號。The control unit 11413 performs various controls related to the imaging of the surgical site and the like by the endoscope 11100 and the display of the captured image obtained by imaging the surgical site and the like. For example, the control unit 11413 generates a control signal for controlling the driving of the camera head 11102 .
又,控制部11413基於由圖像處理部11412實施圖像處理後之圖像信號使顯現有手術部位等之攝像圖像顯示於顯示裝置11202。此時,控制部11413可利用各種圖像辨識技術辨識攝像圖像內之各種物體。例如,控制部11413藉由檢測攝像圖像中所含之物體之邊緣之形狀或顏色等,而可辨識鑷子等手術器具、特定之生物體部位、出血、能量處置具11112之使用時之霧氣等。控制部11413可在使顯示裝置11202顯示攝像圖像時,使用該辨識結果使各種手術支援資訊重疊顯示於該手術部位之圖像。藉由重疊顯示手術支援資訊,對施術者11131予以提示,而可減輕施術者11131之負擔,而施術者11131準確地進行手術。Furthermore, the control unit 11413 causes the display device 11202 to display the captured image showing the surgical site or the like based on the image signal processed by the image processing unit 11412 . At this time, the control unit 11413 can use various image recognition technologies to identify various objects in the captured image. For example, by detecting the shape or color of the edges of objects included in the captured image, the control unit 11413 can identify surgical instruments such as forceps, specific biological parts, bleeding, mist when using the energy treatment tool 11112, etc. . When causing the display device 11202 to display the captured image, the control unit 11413 may use the recognition result to display various surgical support information overlayed on the image of the surgical site. By overlaying and displaying the surgical support information, the surgeon 11131 is reminded, thereby reducing the burden on the surgeon 11131 and allowing the surgeon 11131 to perform the surgery accurately.
連接相機頭11102及CCU 11201之傳送纜線11400可為與電信號之通訊對應之電信號纜線、與光通訊對應之光纖、或其等之複合纜線。The transmission cable 11400 connecting the camera head 11102 and the CCU 11201 may be an electrical signal cable corresponding to the communication of electrical signals, an optical fiber corresponding to the optical communication, or a composite cable thereof.
此處,於圖示之例中,可使用傳送纜線11400以有線進行通訊,但相機頭11102與CCU 11201之間之通訊亦可以無線進行。Here, in the example shown in the figure, the transmission cable 11400 can be used for wired communication, but the communication between the camera head 11102 and the CCU 11201 can also be performed wirelessly.
以上,說明了可應用本揭示之技術之內視鏡手術系統之一例。本揭示之技術可應用於以上所說明之構成中之例如相機頭11102之攝像部11402。由於藉由將本揭示之技術應用於相接頭11102,而可獲得更鮮明之手術部位圖像,故手術者可準確地確認手術部位。The above has described an example of the endoscopic surgery system to which the technology of the present disclosure can be applied. The technology of the present disclosure can be applied to the imaging unit 11402 of the camera head 11102 in the structure described above. By applying the technology of the present disclosure to the connector 11102, a clearer image of the surgical site can be obtained, so the operator can accurately confirm the surgical site.
此外,此處,作為一例,說明了內視鏡手術系統,但本揭示之技術此外可應用於例如顯微鏡手術系統等。In addition, here, as an example, the endoscopic surgery system is described, but the technology of the present disclosure can also be applied to, for example, a microscope surgery system.
以上,說明了本揭示之實施形態,但本揭示之技術範圍不限定於上述之實施形態本身,於不脫離本揭示之要旨之範圍內,可進行各種變更。又,可適宜組合不同之實施形態及變化例之構成要素。The embodiments of the present disclosure have been described above. However, the technical scope of the present disclosure is not limited to the above-described embodiment itself, and various changes can be made within the scope that does not deviate from the gist of the present disclosure. In addition, the constituent elements of different embodiments and modifications can be appropriately combined.
又,本說明書所記載之各實施形態之效果終極而言僅為例示,而非限定性效果,可具有其他效果。In addition, the effects of each embodiment described in this specification are only illustrative in the final analysis, and are not limiting effects, and may have other effects.
此外,本技術亦可採取如以下之構成。 (1) 一種固體攝像裝置,其包含由複數個像素矩陣狀排列而成之像素陣列部,該複數個像素分別包含將第1波長成分之光進行光電轉換之複數個第1像素,且 前述像素分別包含: 光電轉換部,其將入射光進行光電轉換; 傳送電晶體,其控制在前述光電轉換部產生之電荷之傳送; 浮動擴散區域,其蓄積自前述光電轉換部經由前述傳送電晶體傳送之前述電荷;及 放大電晶體,其使與蓄積於前述浮動擴散區域之前述電荷相應之電壓信號出現於信號線; 前述複數個第1像素於前述像素陣列部中排列於第1斜向方向; 排列於前述第1斜向方向之前述複數個第1像素中之至少2個第1像素共有1個前述浮動擴散區域。 (2) 如前述(1)之固體攝像裝置,其中前述像素陣列部包含複數個共有1個浮動擴散區域之至少2個第1像素之組合;且 前述至少2個第1像素之組合於前述像素陣列部中規則地排列。 (3) 如前述(1)或(2)之固體攝像裝置,其中前述浮動擴散區域配置於共有該浮動擴散區域之前述至少2個第1像素之間。 (4) 如前述(1)至(3)中任一項之固體攝像裝置,其中前述複數個像素分別包含將與前述第1波長成分不同之第2波長成分之光進行光電轉換之複數個第2像素;且 前述複數個第2像素於前述像素陣列部中排列於行方向; 前述複數個第2像素中之於前述行方向每隔1個像素而排列之至少2個第2像素共有1個前述浮動擴散區域。 (5) 如前述(4)之固體攝像裝置,其中前述至少2個第1像素共有之前述1個浮動擴散區域、與前述至少2個第2像素共有之前述1個浮動擴散區域係相同之浮動擴散區域。 (6) 如前述(4)或(5)之固體攝像裝置,其進一步具備處理部,該處理部將自前述像素陣列部讀出之圖像資料之像素排列重新排列。 (7) 如前述(1)至(6)中任一項之固體攝像裝置,其進一步具備修正部,該修正部修正自前述複數個像素各者讀出之圖像值。 (8) 如前述(1)至(7)中任一項之固體攝像裝置,其進一步具備驅動電路,該驅動電路以同時開始前述複數個像素之曝光之方式驅動前述複數個像素。 (9) 如前述(1)至(8)中任一項之固體攝像裝置,其中前述像素陣列部具備以拜耳排列為重複之單位之彩色濾光器排列。 (10) 如前述(1)至(8)中任一項之固體攝像裝置,其中前述像素陣列部具備以四倍拜耳排列為重複之單位之彩色濾光器排列。 (11) 如前述(1)至(8)中任一項之固體攝像裝置,其中前述像素陣列部具備以RGBW排列為重複之單位之彩色濾光器排列。 (12) 如前述(1)至(3)中任一項之固體攝像裝置,其中前述複數個像素分別包含將與前述第1波長成分不同之第2波長成分之光進行光電轉換之複數個第2像素;且 前述複數個第2像素於前述像素陣列部中排列於與前述第1斜向方向交叉之第2斜向方向; 排列於前述第2斜向方向之前述複數個第2像素中之至少2個第2像素共有1個前述浮動擴散區域。 (13) 如前述(12)之固體攝像裝置,其中前述至少2個第1像素共有之前述1個浮動擴散區域、與前述至少2個第2像素共有之前述1個浮動擴散區域係相同之浮動擴散區域。 (14) 如前述(12)或(13)之固體攝像裝置,其中前述複數個像素分別包含將與前述第1波長成分及前述第2波長成分不同之第3波長成分之光進行光電轉換之複數個第3像素;且 前述複數個第3像素於前述像素陣列部中排列於行方向及列方向; 前述複數個第3像素中之於前述行方向及列方向每隔1個像素而排列之至少2個第3像素共有1個前述浮動擴散區域。 (15) 如前述(12)或(13)之固體攝像裝置,其中前述複數個像素包含:前述複數個第1像素、前述複數個第2像素、及分別將與前述第1波長成分及前述第2波長成分不同之第3波長成分之光進行光電轉換之複數個第3像素;且 前述像素陣列部具備以1個以上之前述第1像素與1個以上之前述第2像素矩陣狀排列之第1單元、及1個以上之前述第1像素與1個以上之前述第3像素矩陣狀排列之第2單元為重複之單位之彩色濾光器排列。 (16) 如前述(1)至(15)中任一項之固體攝像裝置,其進一步具備: 驅動電路,其驅動前述複數個像素;及 複數條驅動線,其等自前述驅動電路延伸,且連接於前述複數個像素;且 排列於前述第1斜向方向且共有前述1個浮動擴散區域之前述至少2個第1像素連接於相同之驅動線。 (17) 一種電子機器,其具備: 前述(1)至(16)中任一項之固體攝像裝置;及 處理器,其對於自前述固體攝像裝置輸出之圖像資料執行特定處理。 (18) 一種固體攝像裝置,其具備: 像素陣列部,其具備矩陣狀排列之複數個像素; 驅動電路,其驅動前述複數個像素;及 複數條驅動線,其等自前述驅動電路延伸,且連接於前述複數個像素;且 前述像素分別包含: 光電轉換部,其將入射光進行光電轉換; 傳送電晶體,其控制在前述光電轉換部產生之電荷之傳送; 浮動擴散區域,其蓄積自前述光電轉換部經由前述傳送電晶體傳送之前述電荷;及 放大電晶體,其使與蓄積於前述浮動擴散區域之前述電荷相應之電壓信號出現於信號線; 前述複數個像素包含複數個第1像素、及複數個第2像素; 前述第1像素於前述第2像素分別於前述像素陣列部中排列於斜向方向; 於前述像素陣列部中排列於相鄰之2列之前述第1像素連接於同一第1驅動線; 於前述像素陣列部中排列於相鄰之2列之前述第2像素連接於與前述第1驅動線不同之同一第2驅動線。 (19) 如前述(18)之固體攝像裝置,其中前述驅動電路將連接於前述第1驅動線之前述第1像素之電荷蓄積時間設為第1期間,將連接於前述第2驅動線之前述第2像素之電荷蓄積時間設為與前述第1期間不同之第2期間。 (20) 如前述(18)之固體攝像裝置,其中前述第1像素將第1波長成分之光進行光電轉換;且 前述第2像素將與前述第1波長成分不同之第2波長成分之光進行光電轉換。 (21) 如前述(18)至(20)中任一項之固體攝像裝置,其中排列於前述2列之第1像素中之排列於前述斜向方向之2個第1像素各者共有1個前述浮動擴散區域;且 排列於前述2列之第2像素中之排列於前述斜向方向之2個第2像素各者共有1個前述浮動擴散區域。 (22) 如前述(21)之固體攝像裝置,其中前述2個第1像素共有之前述1個浮動擴散區域、與前述2個第2像素共有之前述1個浮動擴散區域係相同之浮動擴散區域。 (23) 如前述(18)至(22)中任一項之固體攝像裝置,其進一步具備處理部,該處理部將自前述像素陣列部讀出之圖像資料之像素排列重新排列。 (24) 如前述(18)至(23)中任一項之固體攝像裝置,其進一步具備修正部,該修正部修正自前述複數個像素各者讀出之圖像值。 (25) 一種電子機器,其具備: 前述(18)至(24)中任一項之固體攝像裝置;及 處理器,其對於自前述固體攝像裝置輸出之圖像資料執行特定處理。 In addition, this technology may also adopt the following configuration. (1) A solid-state imaging device including a pixel array section composed of a plurality of pixels arranged in a matrix, each of the plurality of pixels including a plurality of first pixels that photoelectrically convert light of a first wavelength component, and The aforementioned pixels include: a photoelectric conversion part that photoelectrically converts incident light; A transfer transistor that controls the transfer of charges generated in the aforementioned photoelectric conversion part; a floating diffusion region that accumulates the aforementioned charge transferred from the aforementioned photoelectric conversion portion through the aforementioned transfer transistor; and an amplifying transistor that causes a voltage signal corresponding to the electric charge accumulated in the floating diffusion region to appear on the signal line; The plurality of first pixels are arranged in the first oblique direction in the pixel array portion; At least two first pixels among the plurality of first pixels arranged in the first oblique direction share one floating diffusion area. (2) The solid-state imaging device of (1) above, wherein the pixel array section includes a plurality of combinations of at least two first pixels that share one floating diffusion area; and The combination of the at least two first pixels is regularly arranged in the pixel array portion. (3) The solid-state imaging device according to the above (1) or (2), wherein the floating diffusion area is arranged between the at least two first pixels sharing the floating diffusion area. (4) The solid-state imaging device according to any one of the above (1) to (3), wherein the plurality of pixels respectively include a plurality of second pixels that photoelectrically convert light of a second wavelength component that is different from the first wavelength component; and The plurality of second pixels are arranged in the row direction in the pixel array section; Among the plurality of second pixels, at least two second pixels arranged every other pixel in the row direction share one floating diffusion area. (5) The solid-state imaging device of (4) above, wherein the at least two first pixels share the one floating diffusion area, and the floating diffusion area is the same as the at least two second pixels sharing the one floating diffusion area. (6) The solid-state imaging device of (4) or (5) above further includes a processing unit that rearranges the pixel arrangement of the image data read from the pixel array unit. (7) The solid-state imaging device according to any one of the above (1) to (6), further including a correction unit that corrects the image value read from each of the plurality of pixels. (8) The solid-state imaging device according to any one of the above (1) to (7) further includes a drive circuit that drives the plurality of pixels to start exposure of the plurality of pixels simultaneously. (9) The solid-state imaging device according to any one of the above (1) to (8), wherein the pixel array section includes a color filter array with a Bayer array as a repeating unit. (10) The solid-state imaging device according to any one of the above (1) to (8), wherein the pixel array section includes a color filter array with a quadruple Bayer array as a repeating unit. (11) The solid-state imaging device according to any one of the above (1) to (8), wherein the pixel array section includes a color filter array with an RGBW array as a repeating unit. (12) The solid-state imaging device according to any one of the above (1) to (3), wherein the plurality of pixels respectively include a plurality of second pixels that photoelectrically convert light of a second wavelength component that is different from the first wavelength component; and The plurality of second pixels are arranged in a second oblique direction intersecting the first oblique direction in the pixel array portion; At least two of the plurality of second pixels arranged in the second oblique direction share one floating diffusion area. (13) The solid-state imaging device of (12) above, wherein the at least two first pixels share the one floating diffusion area, and the floating diffusion area is the same as the at least two second pixels sharing the one floating diffusion area. (14) The solid-state imaging device of (12) or (13) above, wherein the plurality of pixels respectively include a plurality of third pixels that photoelectrically convert light of a third wavelength component that is different from the aforementioned first wavelength component and the aforementioned second wavelength component. pixels; and The plurality of third pixels are arranged in the row direction and the column direction in the pixel array section; Among the plurality of third pixels, at least two third pixels arranged every other pixel in the row direction and column direction share one floating diffusion area. (15) The solid-state imaging device of (12) or (13) above, wherein the plurality of pixels include: the plurality of first pixels, the plurality of second pixels, and the plurality of first wavelength components and the aforementioned second wavelength components respectively. A plurality of third pixels for photoelectric conversion of light with different third wavelength components; and The pixel array section includes a first unit in which one or more first pixels and one or more second pixels are arranged in a matrix, and one or more first pixels and one or more third pixel matrices The second unit of the pattern arrangement is a repeating unit of color filter arrangement. (16) The solid-state imaging device according to any one of the above (1) to (15), further includes: A driving circuit that drives the aforementioned plurality of pixels; and A plurality of driving lines extending from the aforementioned driving circuit and connected to the aforementioned plurality of pixels; and The at least two first pixels arranged in the first oblique direction and sharing the one floating diffusion area are connected to the same driving line. (17) An electronic machine having: The solid-state imaging device according to any one of the above (1) to (16); and A processor that performs specific processing on image data output from the solid-state imaging device. (18) A solid-state camera device having: A pixel array section, which has a plurality of pixels arranged in a matrix; A driving circuit that drives the aforementioned plurality of pixels; and A plurality of driving lines extending from the aforementioned driving circuit and connected to the aforementioned plurality of pixels; and The aforementioned pixels include: a photoelectric conversion part that photoelectrically converts incident light; A transfer transistor that controls the transfer of charges generated in the aforementioned photoelectric conversion part; a floating diffusion region that accumulates the aforementioned charge transferred from the aforementioned photoelectric conversion portion through the aforementioned transfer transistor; and an amplifying transistor that causes a voltage signal corresponding to the electric charge accumulated in the floating diffusion region to appear on the signal line; The aforementioned plurality of pixels includes a plurality of first pixels and a plurality of second pixels; The first pixel and the second pixel are respectively arranged in the oblique direction in the pixel array portion; The first pixels arranged in two adjacent columns in the pixel array section are connected to the same first driving line; The second pixels arranged in two adjacent columns in the pixel array section are connected to the same second driving line that is different from the first driving line. (19) The solid-state imaging device of (18) above, wherein the drive circuit sets the charge accumulation time of the first pixel before the first drive line is connected to the first period, and sets the charge accumulation time of the second pixel before the second drive line is connected to the first period. The charge accumulation time is a second period that is different from the first period. (20) The solid-state imaging device of (18) above, wherein the first pixel photoelectrically converts the light of the first wavelength component; and The second pixel photoelectrically converts light with a second wavelength component that is different from the first wavelength component. (twenty one) The solid-state imaging device according to any one of the above (18) to (20), wherein each of the two first pixels arranged in the oblique direction among the first pixels arranged in the two columns has one floating diffusion in total. area; and Each of the two second pixels arranged in the oblique direction among the second pixels arranged in the two columns has one floating diffusion area. (twenty two) The solid-state imaging device of (21) above, wherein the two first pixels share the one floating diffusion area, and the two second pixels share the same floating diffusion area. (twenty three) The solid-state imaging device according to any one of (18) to (22) above, further including a processing unit that rearranges the pixel arrangement of the image data read from the pixel array unit. (twenty four) The solid-state imaging device according to any one of (18) to (23) above, further including a correction unit that corrects the image value read from each of the plurality of pixels. (25) An electronic machine having: The solid-state imaging device according to any one of the above (18) to (24); and A processor that performs specific processing on image data output from the solid-state imaging device.
1:電子機器(攝像裝置) 10:固體攝像裝置(影像感測器) 11:攝像透鏡 13:處理器 14:記憶部 21,21A,21B,221,221A,221B,221C,221D,221E,221F,321,321A,321B,321C,321D,321E:像素陣列部 22:垂直驅動電路 23:行處理電路 23a:AD轉換電路 24:水平驅動電路 25:系統控制部 26:信號處理部 27:資料儲存部 30,30A,100,B 0,B 1,G 0,G 1,R 0,R 1:像素 30B:B像素 30G:G像素 30IR:IR像素 30L:長蓄像素 30R:R像素 30S:短蓄像素/像素 30W,30WL,30WS:W像素 31,31-1~31-4,112:傳送電晶體 32:重置電晶體 33:放大電晶體 34,131,132:選擇電晶體 41:受光晶片 42:電路晶片 50A,50B:基本單元 50ab,50ar,50arw,50abw,50b,50b4,50b5,50b5w,50bir,50bw,50g5w,50gir,50gw,50r,50r4,50r4w,50r5,50r5w,50rir,50rw:共有單元 51:晶載透鏡 52:彩色濾光器 53:平坦化膜 54:遮光膜 55,63:絕緣膜 56,64:P型半導體區域 57:受光面 58:半導體基板 59:N型半導體區域 60:像素分離部 61:槽部 62:固定電荷膜 65:配線層 66:配線 67:絕緣層 101-1~101-n:列記憶體 102:重排馬賽克處理部 110:前段電路 113:FD重置電晶體 115:前段放大電晶體 116:電流源電晶體 120:前段節點 121,122:電容元件 130:選擇電路 140:後段節點 141:後段重置電晶體 150:後段電路 151:後段放大電晶體 152:後段選擇電晶體 302,302a:電路構成 900:智慧型手機 901:CPU 902:ROM 903:RAM 904:儲存裝置 905:通訊模組 906:通訊網路 907:感測器模組 910:顯示裝置 911:揚聲器 912:麥克風 913:輸入裝置 914:匯流排 11000:內視鏡手術系統 11100:內視鏡 11101:鏡筒 11102:相機頭 11110:手術器具 11111:氣腹管 11112:能量處置具 11120:支持臂裝置 11131:施術者(醫生) 11132:患者 11133:病床 11200:手推車 11201:相機控制單元/CCU 11202:顯示裝置 11203:光源裝置 11204:輸入裝置 11205:處置具控制裝置 11206:氣腹裝置 11207:記錄器 11208:印表機 11400:傳送纜線 11401:透鏡單元 11402,12031,12101,12102,12103,12104,12105:攝像部 11403:驅動部 11404:通訊部 11405:相機頭控制部 11411:通訊部 11412:圖像處理部 11413:控制部 12000:車輛控制系統 12001:通訊網路 12010:驅動系統控制單元 12020:車體系統控制單元 12030:車外資訊檢測單元 12040:車內資訊檢測單元 12041:駕駛者狀態檢測部 12050:整合控制單元 12051:微電腦 12052:聲音圖像輸出部 12053:車載網路I/F 12061:音訊揚聲器 12062:顯示部 12063:儀表板 12100:車輛 12111,12112,12113,12114:攝像範圍 B:藍色 FD:浮動擴散區域 G:綠色 id1:電流 L1:入射光 LD:像素驅動線/水平信號線 LD31:傳送電晶體驅動線 LD32:重置電晶體驅動線 LD34:選擇電晶體驅動線 PD,PD1~PD4:光電轉換部 R:紅色 RST:重置信號 rst:FD重置信號 rstb:後段重置信號 SEL:選擇控制信號 selb:後段選擇信號 TRG:傳送信號/傳送控制信號 trg:傳送信號 VDD:電源電壓 VRD:垂直重置輸入線 Vreg:電位 VSL:垂直信號線 VCOM:垂直電流供給線 W:白色 ϕr,ϕs:選擇信號 1: Electronic equipment (camera device) 10: Solid-state imaging device (image sensor) 11: Imaging lens 13: Processor 14: Memory unit 21, 21A, 21B, 221, 221A, 221B, 221C, 221D, 221E, 221F, 321, 321A, 321B, 321C, 321D, 321E: Pixel array section 22: Vertical drive circuit 23: Line processing circuit 23a: AD conversion circuit 24: Horizontal drive circuit 25: System control section 26: Signal processing section 27: Data storage section 30 ,30A,100,B 0 ,B 1 ,G 0 ,G 1 ,R 0, R 1 :pixel 30B:B pixel 30G:G pixel 30IR:IR pixel 30L:long storage pixel 30R:R pixel 30S:short storage pixel /Pixels 30W, 30WL, 30WS: W pixels 31, 31-1~31-4, 112: Transmission transistor 32: Reset transistor 33: Amplification transistor 34, 131, 132: Selection transistor 41: Light-receiving chip 42: Circuit chip 50A, 50B : Basic unit 50ab, 50ar, 50arw, 50abw, 50b, 50b4, 50b5, 50b5w, 50bir, 50bw, 50g5w, 50gir, 50gw, 50r, 50r4, 50r4w, 50r5, 50r5w, 50rir, 50rw: Total unit 51: Crystal-loaded lens 52: Color filter 53: Planarizing film 54: Light-shielding film 55, 63: Insulating film 56, 64: P-type semiconductor region 57: Light-receiving surface 58: Semiconductor substrate 59: N-type semiconductor region 60: Pixel separation part 61: Groove 62: Fixed charge film 65: Wiring layer 66: Wiring 67: Insulating layer 101-1~101-n: Column memory 102: Rearrangement mosaic processing unit 110: Front-end circuit 113: FD reset transistor 115: Front-end Amplification transistor 116: current source transistor 120: front-stage node 121, 122: capacitor element 130: selection circuit 140: rear-stage node 141: rear-stage reset transistor 150: rear-stage circuit 151: rear-stage amplification transistor 152: rear-stage selection transistor 302, 302a :Circuit composition 900:Smartphone 901:CPU 902:ROM 903:RAM 904:Storage device 905:Communication module 906:Communication network 907:Sensor module 910:Display device 911:Speaker 912:Microphone 913:Input Device 914: Bus 11000: Endoscopic surgery system 11100: Endoscope 11101: Lens barrel 11102: Camera head 11110: Surgical instrument 11111: Verestroperitoneum tube 11112: Energy disposal instrument 11120: Support arm device 11131: Operator (doctor) ) 11132: Patient 11133: Hospital bed 11200: Trolley 11201: Camera control unit/CCU 11202: Display device 11203: Light source device 11204: Input device 11205: Treatment device control device 11206: Insemination device 11207: Recorder 11208: Printer 11400 :Transmission cable 11401: Lens unit 11402, 12031, 12101, 12102, 12103, 12104, 12105: Camera section 11403: Drive section 11404: Communication section 11405: Camera head control section 11411: Communication section 11412: Image processing section 11413: Control unit 12000: Vehicle control system 12001: Communication network 12010: Drive system control unit 12020: Vehicle body system control unit 12030: Outside vehicle information detection unit 12040: Inside vehicle information detection unit 12041: Driver status detection unit 12050: Integrated control unit 12051 : Microcomputer 12052: Sound and image output unit 12053: Vehicle network I/F 12061: Audio speaker 12062: Display unit 12063: Instrument panel 12100: Vehicle 12111, 12112, 12113, 12114: Camera range B: Blue FD: Floating diffusion Area G: Green id1: Current L1: Incident light LD: Pixel drive line/horizontal signal line LD31: Transfer transistor drive line LD32: Reset transistor drive line LD34: Select transistor drive line PD, PD1~PD4: Photoelectric conversion Part R: red RST: reset signal rst: FD reset signal rstb: rear section reset signal SEL: selection control signal selb: rear section selection signal TRG: transmission signal/transmission control signal trg: transmission signal VDD: power supply voltage VRD: vertical Reset input line Vreg: potential VSL: vertical signal line VCOM: vertical current supply line W: white ϕr, ϕs: selection signal
圖1係顯示搭載有本揭示之第1實施形態之固體攝像裝置之電子機器之概略構成例之方塊圖。 圖2係顯示本揭示之第1實施形態之CMOS型固體攝像裝置之概略構成例之方塊圖。 圖3係顯示本揭示之第1實施形態之像素之概略構成例之電路圖。 圖4係顯示具備本揭示之第1實施形態之FD共有構造之像素之概略構成例之電路圖。 圖5係顯示本揭示之第1實施形態之影像感測器之積層構造例之圖。 圖6係顯示本揭示之第1實施形態之像素之基本的剖面構造例之剖視圖。 圖7係顯示採用拜耳排列作為彩色濾光器排列之情形之本揭示之第1實施形態之像素配置例之俯視圖。 圖8係顯示採用四倍拜耳排列作為彩色濾光器排列之情形之本揭示之第1實施形態之像素配置例之俯視圖。 圖9(A)、(B)係用於說明採用拜耳排列之先前之影像感測器之像素加算之圖。 圖10(A)、(B)係用於說明本揭示之第1實施形態之加算像素之組合之例之圖。 圖11係用於說明8像素共有構造之情形之像素加算例之圖。 圖12係用於說明4像素共有構造之情形之像素加算例之圖。 圖13係用於說明本揭示之第1實施形態之共有單元之構成例之圖。 圖14(A)~(C)係用於說明本揭示之第1實施形態之重排馬賽克處理之圖。 圖15係顯示用於執行本揭示之第1實施形態之重排馬賽克處理之構成之方塊圖。 圖16係用於說明本揭示之第1實施形態之修正處理之圖。 圖17係顯示採用作為本揭示之第1實施形態之全域快門方式之一之VDGS(電壓域型全域快門)方式之像素之概略構成例之電路圖。 圖18係顯示以拜耳排列之基本單元構成像素共有之情形之電路配置例之圖。 圖19係顯示構成本揭示之第1實施形態之像素共有之情形之電路配置例之圖。 圖20(A)、(B)係顯示對於採用本揭示之第1實施形態之RGBW排列(W為白色)之影像感測器可應用之共有單元之一例之圖。 圖21係顯示採用本揭示之第2實施形態之彩色濾光器排列及像素共有構造之像素配置例之俯視圖。 圖22(A)、(B)係用於說明本揭示之第2實施形態之加算像素之組合例之圖。 圖23(A)、(B)係顯示採用本揭示之第2實施形態之第1變化例之彩色濾光器排列及像素共有構造之像素配置例之俯視圖。 圖24(A)、(B)係顯示採用本揭示之第2實施形態之第2變化例之彩色濾光器排列及像素共有構造之像素配置例之俯視圖。 圖25係顯示採用本揭示之第2實施形態之第3變化例之彩色濾光器排列及像素共有構造之像素配置例之俯視圖(其1)。 圖26係顯示採用本揭示之第2實施形態之第3變化例之彩色濾光器排列及像素共有構造之像素配置例之俯視圖(其2)。 圖27係顯示採用本揭示之第2實施形態之第3變化例之彩色濾光器排列及像素共有構造之像素配置例之俯視圖(其3)。 圖28係顯示採用本揭示之第2實施形態之第3變化例之彩色濾光器排列及像素共有構造之像素配置例之俯視圖(其4)。 圖29係用於說明採用滾動快門方式之影像感測器之快門控制之圖。 圖30係顯示採用滾動快門方式之影像感測器之像素驅動線之連接例之圖。 圖31係顯示採用滾動快門方式之影像感測器之像素驅動線之另一連接例之圖。 圖32係顯示本揭示之第3實施形態之像素驅動線之連接例之圖。 圖33係顯示本揭示之第3實施形態之像素驅動線之另一連接例之圖。 圖34(A)~(C)係顯示用於執行本揭示之第3實施形態之重排馬賽克處理之構成之方塊圖。 圖35係顯示本揭示之第3實施形態之像素配置例之俯視圖。 圖36係顯示本揭示之第3實施形態之另一像素配置例之俯視圖(其1)。 圖37係顯示本揭示之第3實施形態之又一像素配置例之俯視圖(其2)。 圖38係顯示本揭示之第3實施形態之再一像素配置例之俯視圖(其3)。 圖39係顯示本揭示之第3實施形態之又再一像素配置例之俯視圖(其4)。 圖40係顯示智慧型手機之概略性功能構成之一例之方塊圖。 圖41係顯示車輛控制系統之概略構成之一例之方塊圖。 圖42係顯示車外資訊檢測部及攝像部之設置位置之一例之說明圖。 圖43係顯示內視鏡手術系統之概略性構成之一例之圖。 圖44係顯示相機頭及CCU之功能構成之一例之方塊圖。 FIG. 1 is a block diagram showing a schematic configuration example of an electronic device equipped with the solid-state imaging device according to the first embodiment of the present disclosure. FIG. 2 is a block diagram showing a schematic configuration example of the CMOS solid-state imaging device according to the first embodiment of the present disclosure. FIG. 3 is a circuit diagram showing an example of a schematic configuration of a pixel according to the first embodiment of the present disclosure. FIG. 4 is a circuit diagram showing a schematic configuration example of a pixel having the FD common structure according to the first embodiment of the present disclosure. FIG. 5 is a diagram showing an example of a multilayer structure of the image sensor according to the first embodiment of the present disclosure. FIG. 6 is a cross-sectional view showing an example of a basic cross-sectional structure of a pixel according to the first embodiment of the present disclosure. 7 is a top view showing a pixel arrangement example of the first embodiment of the present disclosure in which a Bayer arrangement is adopted as a color filter arrangement. FIG. 8 is a top view showing a pixel arrangement example of the first embodiment of the present disclosure in which a quadruple Bayer arrangement is used as the color filter arrangement. 9(A) and (B) are diagrams for explaining pixel addition of a conventional image sensor using the Bayer arrangement. FIGS. 10(A) and 10(B) are diagrams illustrating an example of a combination of addition pixels according to the first embodiment of the present disclosure. FIG. 11 is a diagram illustrating a pixel addition calculation example in the case of a shared structure of 8 pixels. FIG. 12 is a diagram illustrating a pixel addition calculation example in the case of a 4-pixel shared structure. FIG. 13 is a diagram illustrating a configuration example of a common unit according to the first embodiment of the present disclosure. FIGS. 14(A) to 14(C) are diagrams for explaining the rearrangement mosaic processing according to the first embodiment of the present disclosure. FIG. 15 is a block diagram showing a structure for executing the rearrangement mosaic processing according to the first embodiment of the present disclosure. FIG. 16 is a diagram for explaining the correction process in the first embodiment of the present disclosure. FIG. 17 is a circuit diagram showing an example of the schematic configuration of a pixel using the VDGS (Voltage Domain Global Shutter) method, which is one of the global shutter methods according to the first embodiment of the present disclosure. FIG. 18 is a diagram showing an example of a circuit configuration in a case where pixels are shared by basic units in a Bayer arrangement. FIG. 19 is a diagram showing an example of a circuit configuration in the case of sharing pixels constituting the first embodiment of the present disclosure. 20(A) and (B) are diagrams showing an example of a common unit applicable to an image sensor using an RGBW arrangement (W is white) according to the first embodiment of the present disclosure. 21 is a top view showing a pixel arrangement example using a color filter arrangement and a pixel sharing structure according to the second embodiment of the present disclosure. 22(A) and 22(B) are diagrams illustrating a combination example of addition pixels according to the second embodiment of the present disclosure. 23 (A) and (B) are plan views showing a pixel arrangement example using a color filter arrangement and a pixel sharing structure according to the first variation of the second embodiment of the present disclosure. 24(A) and (B) are plan views showing a pixel arrangement example using a color filter arrangement and a pixel sharing structure according to the second variation of the second embodiment of the present disclosure. FIG. 25 is a top view (part 1) showing a pixel arrangement example of a color filter arrangement and a pixel sharing structure according to the third variation of the second embodiment of the present disclosure. FIG. 26 is a top view (Part 2) showing a pixel arrangement example of a color filter arrangement and a pixel sharing structure using a third variation of the second embodiment of the present disclosure. FIG. 27 is a top view (part 3) showing a pixel arrangement example of a color filter arrangement and a pixel sharing structure using a third variation of the second embodiment of the present disclosure. FIG. 28 is a top view (Part 4) showing a pixel arrangement example of a color filter arrangement and a pixel sharing structure using a third variation of the second embodiment of the present disclosure. FIG. 29 is a diagram illustrating shutter control of an image sensor using a rolling shutter method. Figure 30 is a diagram showing a connection example of pixel driving lines of an image sensor using a rolling shutter method. FIG. 31 is a diagram showing another connection example of pixel driving lines of an image sensor using a rolling shutter method. FIG. 32 is a diagram showing a connection example of pixel driving lines according to the third embodiment of the present disclosure. FIG. 33 is a diagram showing another connection example of pixel driving lines according to the third embodiment of the present disclosure. 34(A) to 34(C) are block diagrams showing a structure for executing the rearrangement mosaic processing according to the third embodiment of the present disclosure. FIG. 35 is a top view showing a pixel arrangement example according to the third embodiment of the present disclosure. FIG. 36 is a top view (part 1) showing another pixel arrangement example according to the third embodiment of the present disclosure. FIG. 37 is a top view (part 2) showing another pixel arrangement example according to the third embodiment of the present disclosure. FIG. 38 is a top view (Part 3) showing yet another pixel arrangement example according to the third embodiment of the present disclosure. FIG. 39 is a top view (Part 4) showing yet another pixel arrangement example according to the third embodiment of the present disclosure. FIG. 40 is a block diagram showing an example of a schematic functional configuration of a smartphone. FIG. 41 is a block diagram showing an example of the schematic configuration of the vehicle control system. FIG. 42 is an explanatory diagram showing an example of the installation positions of the vehicle exterior information detection unit and the camera unit. FIG. 43 is a diagram showing an example of the schematic configuration of the endoscopic surgery system. Figure 44 is a block diagram showing an example of the functional configuration of the camera head and CCU.
21A:像素陣列部 21A: Pixel array section
30B:B像素 30B:B pixel
30G:G像素 30G:G pixels
30R:R像素 30R:R pixels
50ab,50ar:共有單元 50ab,50ar:shared units
FD:浮動擴散區域 FD: floating diffusion area
VSL:垂直信號線 VSL: vertical signal line
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