TW202335320A - Pixel package, method for forming the same, and display device using the same - Google Patents

Abstract

A pixel package is provided. The pixel package includes a flexible redistribution layer and a plurality of LED chips arranged on the surface of the flexible redistribution layer in a flip-chip manner. The pixel package further includes a plurality of flexible light-adjusting layers respectively disposed on the LED chips. The pixel package further includes a plurality of flexible composite laminates disposed on the surface of the flexible redistribution layer and between the LED chips.

Description

Pixel package, method of forming same and display device using same

Embodiments of the present disclosure relate to a pixel package, a method of forming the same, and a display device using the same, and in particular, to a pixel package of an active micro light-emitting diode, a method of forming the same, and a display device using the same.

In order to improve the display performance of light-emitting diode (LED) display screens, LED display screens are mainly developing towards small spacing. LED display screens can be implemented through, for example, chip on board (COB) technology or package on board (POB) technology. COB technology can, for example, stick multiple red, green, and blue light-emitting diode chips on a circuit board or substrate; POB technology can combine multiple light-emitting diode chips to form a pixel structure and form a pixel package. These pixel packages are mounted on a circuit board or substrate.

The traditional pixel package has a passive structure and cannot be controlled independently. In addition, under specific color uniformity requirements, the process yield of red and green light-emitting diode wafers is poor. Furthermore, traditional pixel packages are not easy to bend, and have shortcomings such as poor color point concentration and large color point deviation.

Some embodiments of the present disclosure provide an active micro-light emitting diode pixel package, a method of forming the same, and a display device using the same. In the embodiment of the present disclosure, the pixel packages can be controlled individually/independently. In addition, the pixel package of the embodiment of the present disclosure includes a flexible redistribution layer (RDL) and a flexible composite laminate, which can make the entire pixel package easy to bend, and the flexible composite laminate is located on multiple light-emitting diodes. The space between the pole bodies can effectively improve the luminous efficiency of the pixel package and improve the contrast.

In some embodiments, the pixel package of the embodiments of the present disclosure converts the light emitted by the light-emitting diode chip (for example, the light-emitting diode chip that emits ultraviolet light) into light of a specific wavelength through the wavelength conversion layer. Under specific color uniformity requirements, the pixel package of the embodiment of the present disclosure has a better process yield than the traditional pixel package, and has the advantages of high color point concentration and low color point deviation.

Embodiments of the present disclosure include a pixel package. The pixel package includes a flexible redistribution layer and a plurality of light-emitting diode chips. The light-emitting diode chips are disposed on the surface of the flexible redistribution layer in a flip-chip manner. The pixel package also includes a plurality of light adjustment layers, and the light adjustment layers are respectively located on the light emitting diode chip. The pixel package further includes a plurality of flexible composite laminates. The flexible composite laminates are disposed on the surface of the flexible rewiring layer and between the light-emitting diode chips.

Embodiments of the present disclosure include a method of forming a pixel package. The method of forming a pixel package includes the following steps: providing a first temporary substrate; transferring a plurality of flip-chip light-emitting diode wafers to the first temporary substrate; forming a plurality of light adjustment layers on the light-emitting diode wafer; A plurality of flexible composite laminates are formed on the first temporary substrate, wherein the flexible composite laminates are disposed between the light emitting diode wafers; a second temporary substrate is provided, wherein the second temporary substrate is bonded to the light adjustment layer and the flexible composite laminates. the top surface of the layer; removing the first temporary substrate from the backside of the light-emitting diode wafer and the flexible composite stack; forming a flexible redistribution layer on the backside of the light-emitting diode wafer and the flexible composite stack; and placing The second temporary substrate is removed from the light adjustment layer and the top surface of the light adjustment layer.

Embodiments of the present disclosure include a display device. The display device includes a circuit substrate and the aforementioned pixel package, and the pixel package is disposed on the circuit substrate.

The following disclosure provides many different embodiments or examples for implementing different features of the present invention. The following disclosure describes specific examples of each component and its arrangement to simplify the explanation. Of course, these specific examples are not limiting. For example, if the embodiment of the present disclosure describes that the first feature component is formed on or above the second feature component, it means that it may include an embodiment in which the first feature component and the second feature component are in direct contact, or may include There are embodiments in which additional features are formed between the first features and the second features such that the first features and the second features may not be in direct contact.

It should be understood that additional operational steps may be performed before, during, or after the method, and that some of the operational steps may be replaced or omitted in other embodiments of the method.

In addition, words related to space may be used, such as "under", "under", "under", "on", "above", "on" and similar These spatially related terms are used to facilitate the description of the relationship between one (some) element or feature component and another (some) element or feature component in the illustration. These spatially related terms include in use or operation. The different orientations of the device and the orientations described in the drawings. When the device is turned into a different orientation (for example, rotated 90 degrees or at any other orientation), the spatially relative adjectives used therein will also be interpreted in accordance with the rotated orientation.

In the specification, the terms "about", "approximately" and "substantially" usually mean within 20%, or within 10%, or within 5%, or within 3% of a given value or range. , or within 2%, or within 1%, or within 0.5%. The quantities given here are approximate quantities. That is to say, without specifically stating "about", "approximately" and "substantially", the terms "about", "approximately" and "substantially" can still be implied. meaning.

Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. It is understood that these terms, such as those defined in commonly used dictionaries, should be interpreted to have meanings consistent with the relevant technology and the background or context of the present disclosure, and should not be interpreted in an idealized or overly formal manner. Interpretation, unless otherwise specifically defined in the embodiments of this disclosure.

Different embodiments disclosed below may reuse the same reference symbols and/or labels. These repetitions are for the purpose of simplicity and clarity and are not intended to limit specific relationships between the various embodiments and/or structures discussed.

FIG. 1 is a partial top view of the pixel package PP according to some embodiments of the present disclosure. Figure 2 is a partial cross-sectional view of the pixel package PP according to some embodiments of the present disclosure. For example, the structure of the pixel package PP in Figure 2 may be a cross-sectional view taken along line A-A' in Figure 1, but the embodiment of the present disclosure is not limited thereto. It should be noted that for the sake of simplicity, some components of the pixel package PP have been omitted in Figures 1 and 2.

As shown in Figures 1 and 2, in some embodiments, the pixel package PP includes a flexible redistribution layer 109, a plurality of light-emitting diode chips (for example, a first light-emitting diode chip 111, a second light-emitting diode chip The diode chip 112, the third light-emitting diode chip 113), a plurality of light adjustment layers (for example, the first light adjustment layer 121, the second light adjustment layer 122 and the third light adjustment layer 123) and a plurality of flexible composite Stack 103. The first light-emitting diode chip 111, the second light-emitting diode chip 112, and the third light-emitting diode chip 113 are disposed on the surface of the flexible redistribution layer 109 in a flip-chip manner. The light adjustment layer 122 and the third light adjustment layer 123 are respectively located on the light emitting diode chips 111, 112 and 113. The flexible composite laminate 103 is provided on the surface of the flexible redistribution layer 109 and is provided on the first light emitting diode chip. 111. Between the second light-emitting diode chip 112 and the third light-emitting diode chip 113.

In some embodiments, the light-emitting diode chip emits blue light or ultraviolet (UV) light. For example, the first light-emitting diode chip 111, the second light-emitting diode chip 112 and the third light-emitting diode chip 113 can respectively emit the first light, the second light and the third light. The second light and the third light can be blue light or ultraviolet light. As shown in Figure 2, the first light-emitting diode chip 111 includes two electrodes 111a and 111b, the second light-emitting diode chip 112 includes two electrodes 112a and 112b, and the third light-emitting diode chip 113 includes two electrodes 113a and 113a. 113b. In some embodiments, the light-emitting diode chip is a micro LED chip.

In some embodiments, the flexible redistribution layer 109 includes a thin insulating layer 110 and a plurality of conductive structures 116. Each conductive structure 116 passes through the thin insulating layer 110 from the backside 110B of the thin insulating layer 110 to communicate with the first light emitting diode. The body chip 111 , the second light-emitting diode chip 112 and the corresponding electrodes in the third light-emitting diode chip 113 are electrically connected. Furthermore, in some embodiments, the thickness of the thin insulating layer 110 ranges from about 10 to 50 microns.

As shown in FIG. 2 , in some embodiments, the first light adjustment layer 121 , the second light adjustment layer 122 and the third light adjustment layer 123 are respectively located on the first light emitting diode chip 111 and the second light emitting diode. on the bulk chip 112 and the third light-emitting diode chip 113. The first light adjustment layer 121 includes a first light extraction layer 120a and a first color conversion composite layer 131, wherein the first color conversion composite layer 131 includes a first wavelength conversion layer 131a and a first filter layer 131b. The second light adjustment layer 122 includes a second light extraction layer 120b and a second color conversion composite layer 132, wherein the second color conversion composite layer 132 includes a second wavelength conversion layer 132a and a second filter layer 132b. The third light adjustment layer 123 includes a third light extraction layer 120c and a transparent light extraction layer 133.

In more detail, the first light extraction layer 120a is disposed on the first light-emitting diode chip 111, the first wavelength conversion layer 131a is located on the first light extraction layer 120a, and the first filter layer 131b is located on the first wavelength conversion layer. layer 131a; the second light extraction layer 120b is disposed on the second light-emitting diode chip 112, the second wavelength conversion layer 132a is located on the second light extraction layer 120b, and the second filter layer 132b is located on the second wavelength conversion layer 132a; the third light extraction layer 120c is provided on the third light-emitting diode chip 113, and the transparent light extraction layer 133 is provided on the third light extraction layer 120c. The first light extraction layer 120a, the second light extraction layer 120b and the third light extraction layer 120c may be transparent layers and may be made of the same material, and the transparent light extraction layer 133 may include the same or similar material as the third light extraction layer 120c. Material.

Furthermore, the first light extraction layer 120a can cover the top surface of the first light-emitting diode chip 111, cover the top surface and four sides of the first light-emitting diode chip 111, or cover the first light-emitting diode. The top surface and four side surfaces of the bulk wafer 111 and part of the bottom surface except for the electrodes 111a and 111b. The second light extraction layer 120b can cover the top surface of the second light-emitting diode chip 112, cover the top surface and four sides of the second light-emitting diode chip 112, or cover the second light-emitting diode chip 112. The top surface, four sides and part of the bottom surface except for electrodes 112a and 112b. The third light extraction layer 120c can cover the top surface of the third light-emitting diode chip 113, cover the top surface and four sides of the third light-emitting diode chip 113, or cover the third light-emitting diode chip 113. The top surface, four sides and part of the bottom surface except for electrodes 113a and 113b.

In some embodiments, each of the first wavelength conversion layer 131a and the second wavelength conversion layer 132a includes phosphor, quantum dot material, or a combination thereof. For example, the first wavelength conversion layer 131a may include red phosphor, red quantum dot material, or a combination thereof, and the second wavelength conversion layer 132a may include a green phosphor, a green quantum dot material, or a combination thereof, but the present disclosure The embodiment is not limited thereto. Therefore, in some embodiments, the first wavelength conversion layer 131a absorbs part of the first light (blue light or ultraviolet light) emitted by the first light-emitting diode chip 111 and converts it into red light, while the second wavelength conversion layer 132a absorbs Part of the second light (blue light or ultraviolet light) emitted by the second light-emitting diode chip 112 is converted into green light. The third light emitted by the third light-emitting diode chip 113 may be blue light, and the blue light is emitted through the transparent light extraction layer 133 . Accordingly, the pixel package PP may be an RGB pixel package.

In other embodiments of the pixel package, a third color conversion composite layer (not shown) is used on the third light extraction layer 120c corresponding to the third light emitting diode chip 113 to replace the transparent light extraction layer in Figure 2 133. The third color conversion composite layer includes a third wavelength conversion layer (not shown) and a third filter layer (not shown). The third wavelength conversion layer is located on the third light extraction layer 120c, and the third filter layer is located on the third light extraction layer 120c. on the three-wavelength conversion layer. Similarly, the third wavelength conversion layer includes phosphors, quantum dot materials, or combinations thereof. For example, the third wavelength conversion layer may include blue phosphor, blue quantum dot material, or a combination thereof, but the embodiment of the present disclosure is not limited thereto. The third wavelength conversion layer absorbs part of the third light (ultraviolet light) emitted by the third light-emitting diode chip 113 and converts it into blue light.

Furthermore, the first filter layer 131b and the second filter layer 132b can, for example, filter out blue light, UV light or light with a wavelength less than about 450 nm, so that the light can be converted through the first wavelength conversion layer 131a or the second wavelength conversion layer 132a. The color of the light is closer to the color of the phosphor, quantum dot material or combination thereof, but the embodiment of the present disclosure is not limited thereto. In some other embodiments, the first filter layer 131b and the second filter layer 132b may not be provided.

In some embodiments, the pixel package PP is an active pixel package. As shown in FIGS. 1 and 2 , the pixel package PP further includes a control chip 114 , which is disposed on the surface of the flexible redistribution layer 109 and covered by one of the flexible composite laminates 103 . The control chip 114 can be used to control the first light-emitting diode chip 111 , the second light-emitting diode chip 112 and the third light-emitting diode chip 113 . As shown in FIG. 2 , the control chip 114 may have two electrodes 114 a and 114 b, but the number of electrodes is not limited thereto, and the electrodes 114 a and 114 b are electrically connected to the conductive structure 116 of the flexible redistribution layer 109 .

The control chip 114 is, for example, a control chip 114 that can control the execution of predetermined electronic functions (such as diodes, transistors, integrated circuits) or a control chip 114 with photonic functions (such as light-emitting diodes, laser diodes). , photodiode). Alternatively, the control chip 114 may also be a microchip made of silicon or a semiconductor-on-insulator (SOI) wafer and used for logic or memory applications, or a gallium arsenide (GaAs) wafer used as a material and Microchips for RF communication applications, but embodiments of the present disclosure are not limited thereto.

In order to make the overall size of the pixel package PP smaller or thinner, in some embodiments, the control chip 114 is a micro control chip. The control chip 114 is covered by the flexible composite laminate 103 in the pixel package PP, wherein the flexible reflective layer 104 covers the control chip 114 and the flexible light-shielding layer 106 is located on the flexible reflective layer 104. In some embodiments, the flexible reflective layer 104 covers the top surface of the control chip 114, the flexible reflective layer 104 covers the top surface and four sides of the control chip 114, or the flexible reflective layer 104 covers the top surface of the control chip 114, The four sides and part of the bottom except for electrodes 114a and 114b.

Furthermore, as shown in Figure 1, the first light-emitting diode chip 111 (only the first filter layer 131b is shown in Figure 1), the second light-emitting diode chip 112 (only the first filter layer 131b is shown in Figure 1) It is shown that the second filter layer 132b), the third light emitting diode chip 113 and the control chip 114 can form a 2×2 array, but the disclosed embodiment is not limited to this. In some other embodiments, the first light-emitting diode chip 111, the second light-emitting diode chip 112, the third light-emitting diode chip 113 and the control chip 114 are arranged along the same direction (ie, can form a 1 ×4 array).

As shown in FIG. 2 , in some embodiments, the flexible composite stack 103 includes a flexible reflective layer 104 disposed on the flexible redistribution layer 109 , and a flexible light-shielding layer 106 is disposed on the flexible reflective layer 104 . The flexible reflective layer 104 can be used to reflect light to improve luminous efficiency, and the flexible light-shielding layer 106 can be used to increase contrast. The flexible reflective layer 104 may be a flexible white reflective layer and is flexible. The flexible light-shielding layer 106 can be a flexible black light-absorbing layer and is flexible. The top surface of the flexible reflective layer 104 is higher than the top surface of the first wavelength conversion layer 131a and the top surface of the second wavelength conversion layer 132a, and the top surface 106T of the flexible light shielding layer 106 and the top surface 131bT of the first filter layer 131b and the top surface 132bT of the second filter layer 132b are flush with each other.

As shown in Figure 2, in some embodiments, the flexible reflective layer 104 surrounds at least two-thirds of the thickness of the first filter layer 131b and the second filter layer 132b, and the thickness is determined by the first filter layer 131b and the second filter layer 132b. starting from the bottom surface of the layer 131b or the bottom surface of the second filter layer 132b. The ratio of the thickness of the flexible light-shielding layer 106 to the thickness of the first filter layer 131b or the second filter layer 132b is less than or equal to about 1/3. It can be seen that the flexible reflective layer 104 covers the side surfaces of the first light extraction layer 120a, the second light extraction layer 120b and the third light extraction layer 120c, and covers the side surfaces of the first wavelength conversion layer 131a and the second wavelength conversion layer 132a. , and covering part of the side surfaces of the first filter layer 131b and the second filter layer 132b.

The flexible composite laminate 103 can effectively improve the luminous efficiency of the pixel package PP and improve the color contrast. Taking the area where the first light-emitting diode chip 111 is located and the first wavelength conversion layer 131a as a red wavelength conversion layer as an example, the blue light or ultraviolet light emitted by the first light-emitting diode chip 111 passes through the first light extraction layer After 120a emits light, the lateral blue light or ultraviolet light can be reflected by the flexible reflective layer 104 on the side, for example, reflected to the red wavelength conversion layer 131a and converted into red light. The lateral blue light or ultraviolet light can be filtered if it is reflected to the first filter layer 131b. The red wavelength conversion layer 131a absorbs part of the blue light or ultraviolet light and converts it into red light. The lateral red light can be reflected by the flexible reflective layer 104 on the side. The first filter layer 131b is used to filter the unconverted blue light or ultraviolet light, so that the red light can emit light through the top surface 131bT of the first filter layer 131b. The lateral red light can be reflected by the flexible reflective layer 104 on the side. The first filter layer 131b is filtered and emits light.

It can be seen from this that the pixel package PP of the present disclosure is a flexible pixel package, and the flexible rewiring layer 109 and the flexible composite laminate 103 make the entire pixel package PP easy to bend. In some embodiments, when the light-emitting diode wafers (eg, the first light-emitting diode wafer 111 , the second light-emitting diode wafer 112 , and the third light-emitting diode wafer 113 ) are micro light-emitting diode wafers , it is possible to realize a small-sized and easy-to-bend pixel package PP.

Figures 3 to 5 and Figures 7 to 15 are partial cross-sectional views illustrating various stages of forming the pixel package PP according to some embodiments of the present disclosure. It should be particularly noted that for the sake of simplicity, some components of the plain package PP have been omitted from Figures 3 to 5 and Figures 7 to 15 .

Referring to Figure 3, in some embodiments, a first temporary substrate 100 is provided. For example, the first temporary substrate 100 is a carrier substrate, which may include a plastic substrate, a glass substrate, a sapphire substrate or other wireless substrates, but the embodiment of the present disclosure is not limited thereto.

Next, in some embodiments, a plurality of flip-chip light emitting diode wafers are transferred to the first temporary substrate 100 . For example, the light emitting diode wafer may be a micro light emitting diode wafer and is transferred to the first temporary substrate 100 through a mass transfer technology. The mass transfer technology may, for example, use a pick-up device that can pick up a plurality of micro-LED wafers at one time and place the micro-LED wafers on the first temporary substrate 100 . In some embodiments, the pickup device includes an adhesive and patterned transfer head for picking up the micro-LED wafers. The pick-up device includes, for example, a polydimethylsiloxane (PDMS) transfer head with multiple protruding structures. After the micro-LED wafer is adhered through the protruding structure of the transfer head, the micro-LEDs are The wafer is transferred to the first temporary substrate 100, but the embodiment of the present disclosure is not limited thereto.

In some embodiments, the flip-chip LED chip includes a first LED chip 111 , a second LED chip 112 and a third LED chip 113 . The first LED chip 111 , the second light-emitting diode chip 112 and the third light-emitting diode chip 113 respectively emit the first light, the second light and the third light. For example, the first light, the second light, and the third light can be blue light or ultraviolet light. In some embodiments, the first LED chip 111 and the second LED chip 112 emit ultraviolet light, and the third LED chip 113 emits blue light. In some other embodiments, the first LED chip 111 , the second LED chip 112 and the third LED chip 113 all emit blue light. In addition, the first light-emitting diode chip 111 , the second light-emitting diode chip 112 and the third light-emitting diode chip 113 are, for example, small-sized micro light-emitting diode chips.

The micro light-emitting diode chip may include an N-type semiconductor layer, a light-emitting layer and a P-type semiconductor layer. The light-emitting layer is disposed between the N-type semiconductor layer and the P-type semiconductor layer. The light emitted by the micro-LED chip is determined by the light-emitting layer. For example, the light-emitting layers of the first light-emitting diode chip 111 and the second light-emitting diode chip 112 can emit ultraviolet light, and the light-emitting layer of the third light-emitting diode chip 113 can emit blue light. However, the embodiment of the present disclosure It is not limited to this. Alternatively, the light-emitting layers of the first light-emitting diode chip 111, the second light-emitting diode chip 112 and the third light-emitting diode chip 113 can all emit blue light, but the embodiment of the present disclosure is not limited thereto.

The N-type semiconductor layer may include group II-VI materials (for example, zinc selenide (ZnSe)) or group III-V materials (for example, gallium nitride (GaN), aluminum nitride (AlN), indium nitride (InN) , indium gallium nitride (InGaN), aluminum gallium nitride (AlGaN) or aluminum indium gallium nitride (AlInGaN)), and the N-type semiconductor layer may contain dopants such as silicon (Si) or germanium (Ge), but this The disclosed embodiments are not limited thereto.

The light-emitting layer may include at least one undoped semiconductor layer or at least one low-doped layer. For example, the light-emitting layer may be a quantum well (QW) layer, which may include indium gallium nitride (In _x Ga _1-x N), gallium nitride (GaN), nitrogen Aluminum gallium nitride (AlGaN) or aluminum indium gallium nitride (AlInGaN), but the embodiments of the present disclosure are not limited thereto. Alternatively, the light-emitting layer may also be a multiple quantum well (MQW) layer.

The P-type semiconductor layer may include group II-VI materials (for example, zinc selenide (ZnSe)) or group III-V materials (for example, gallium nitride (GaN), aluminum nitride (AlN), indium nitride (InN) , indium gallium nitride (InGaN), aluminum gallium nitride (AlGaN) or aluminum indium gallium nitride (AlInGaN)), and the P-type semiconductor layer may contain magnesium (Mg), carbon (C) and other dopants, but this The disclosed embodiments are not limited thereto. In addition, the N-type semiconductor layer and the P-type semiconductor layer may have a single-layer or multi-layer structure.

As shown in Figure 3, the first light-emitting diode chip 111 has two electrodes 111a and 111b, one of which serves as a positive electrode and is electrically connected to the P-type semiconductor layer of the first light-emitting diode chip 111, and the other serves as a negative electrode. Electrically connected to the N-type semiconductor layer of the first light-emitting diode chip 111 . The second light-emitting diode chip 112 has two electrodes 112a and 112b, one of which serves as a positive electrode and is electrically connected to the P-type semiconductor layer of the second light-emitting diode chip 112, and the other serves as a negative electrode and electrically connects to the second light-emitting diode chip 112. N-type semiconductor layer of diode wafer 112 . The third light-emitting diode chip 113 has two electrodes 113a and 113b, one of which serves as a positive electrode and is electrically connected to the P-type semiconductor layer of the third light-emitting diode chip 113, and the other serves as a negative electrode and electrically connects to the third light-emitting diode chip 113. N-type semiconductor layer of diode wafer 113.

The electrodes 111a, 111b, 112a, 112b, 113a and 113b include conductive materials, such as metal, metal silicide, similar materials or combinations thereof, but the embodiment of the disclosure is not limited thereto. For example, metals may include gold (Au), nickel (Ni), platinum (Pt), palladium (Pd), iridium (Ir), titanium (Ti), chromium (Cr), tungsten (W), aluminum (Al ), copper (Cu), similar materials, the aforementioned alloys, or combinations of the aforementioned, but the embodiments of the present disclosure are not limited thereto.

In addition, as shown in FIG. 3 , a debonding layer 102 may be formed on the first temporary substrate 100 and located between the first temporary substrate 100 and the first light-emitting diode chip 111 (, second light-emitting diode chip). wafer 112 or the third light-emitting diode wafer 113). The release layer 102 may include an epitaxial material (eg, gallium nitride (GaN)) or a high molecular polymer with light-absorbing groups. Taking polymers as an example, under the corresponding wavelength (for example, 100 nm~400 nm) and energy, the chain segments of the light-absorbing groups in the polymer can be photocleaved into small molecular fragments to release the adhered molecules. components, but the embodiments of the present disclosure are not limited thereto.

Referring to FIG. 3 , in some embodiments, after the light-emitting diode wafer (eg, the first light-emitting diode wafer 111 , the second light-emitting diode wafer 112 or the third light-emitting diode wafer 113 ) is transferred to When the first temporary substrate 100 is placed on the first temporary substrate 100 , the plurality of control chips 114 are also transferred to the first temporary substrate 100 . As shown in FIG. 3 , the control chip 114 may have two electrodes 114a and 114b, but the embodiment of the present disclosure is not limited thereto. Similarly, control wafer 114 may be transferred to first temporary substrate 100 using bulk transfer technology.

Referring to Figure 4, in some embodiments, the first light extraction layer 120a, the second light extraction layer 120b and the third light extraction layer 120c are respectively formed on the first light emitting diode chip 111 and the second light emitting diode. on the chip 112 and the third light-emitting diode chip 113 . For example, the first light extraction layer 120a, the second light extraction layer 120b and the third light extraction layer 120c may include transparent layers, and the materials thereof may include silicone or epoxy resin. However, this embodiment of the disclosure is not based on This is the limit. In some embodiments, the first light extraction layer 120a, the second light extraction layer 120b, and the third light extraction layer 120c are compliantly formed on the first light-emitting diode chip 111, the second light-emitting diode chip 112, and on the top and side surfaces of the third light emitting diode chip 113 . For example, the first light extraction layer 120a, the second light extraction layer 120b, and the third light extraction layer 120c can be respectively coated and covered on the first light emitting diode by spin-on coating. (five) surfaces of the chip 111, the second light-emitting diode chip 112 and the third light-emitting diode chip 113 except the bottom surface, but the disclosed embodiment is not limited thereto.

Referring to Figure 5, in some embodiments, the first color conversion composite layer 131 is transferred to the first light extraction layer 120a corresponding to the first light emitting diode chip 111, and the second color conversion composite layer 132 is transferred to the second light extraction layer 120b corresponding to the second light-emitting diode chip 112, wherein the first color conversion composite layer 131 includes a first wavelength conversion layer 131a and a first filter layer 131b, and the second color conversion composite layer 132 includes a second wavelength conversion layer 132a and a second filter layer 132b. Specifically, the first wavelength conversion layer 131a is on the first light extraction layer 120a corresponding to the first light emitting diode chip 111 (for example, can emit ultraviolet light), and the first filter layer 131b is on the first wavelength conversion layer. 131a; the second wavelength conversion layer 132a is on the second light extraction layer 120b corresponding to the second light-emitting diode chip 112 (for example, can emit ultraviolet light), and the second filter layer 132b is on the second wavelength conversion layer 132a superior.

6A to 6E are schematic diagrams illustrating various stages of forming the first color conversion composite layer 131 and transferring it according to some embodiments of the present disclosure. In order to more clearly represent the characteristics of these steps, Figures 6A to 6C are shown in perspective views, while Figures 6D to 6E are shown in cross-sectional views. It is important to note that some components may be omitted from Figures 6A to 6E for the sake of simplicity.

Referring to Figure 6A, in some embodiments, a filter layer 131b' is formed on a red quantum dot (QD) film 131a'. Next, referring to Figure 6B, the red quantum dot film 131a' and the filter layer 131b' are tested and sorted, and multiple bins (Bin) are measured through the multiple backlight points B on the carrier substrate CS. Next, referring to Figures 6B and 6C, based on the plurality of backlight points B, the red quantum dot film 131a' and the filter layer 131b' are cut into a plurality of first color conversion composite layers 131 by, for example, laser. Next, referring to Figure 6D, a plurality of first color conversion composite layers 131 are picked up through the transfer head TH. Finally, referring to FIG. 6E , the first color conversion composite layer 131 is transferred to the first temporary substrate 100 and corresponds to the first light extraction layer 120 a of the first light-emitting diode chip 111 .

The second color conversion composite layer 132 can be transferred to the first temporary substrate 100 in a manner similar to that shown in FIGS. 6A to 6E and correspond to the second light extraction layer 120b of the second light emitting diode chip 112. This will not be repeated.

As shown in Figure 5, in some embodiments, a transparent light extraction layer 133 is formed on the third light extraction layer 120c corresponding to the third light emitting diode chip 113 (which can emit blue light). The transparent light extraction layer 133 may include the same or similar material as the third light extraction layer 120c (or the first light extraction layer 120a or the second light extraction layer 120b), but the embodiment of the present disclosure is not limited thereto. In some other embodiments, the third color conversion composite layer composed of the third wavelength conversion layer (not shown) and the third filter layer (not shown) is transferred to the third light extraction layer 120c. The third wavelength conversion layer is on the third light extraction layer 120c corresponding to the third light emitting diode chip 113 (which can emit blue light, ultraviolet light or other colored light), and the third filter layer is on the third wavelength conversion layer.

In this embodiment, the first light extraction layer 120a and the first color conversion composite layer 131 (including the first wavelength conversion layer 131a and the first filter layer 131b) can be regarded as the first light adjustment layer 121, and the second light extraction layer 120b and the second color conversion composite layer 132 (including the second wavelength conversion layer 132a and the second filter layer 132b) can be regarded as the second light adjustment layer 122, while the third light extraction layer 120c and the transparent light extraction layer 133 (or the third The three-color conversion composite layer) can be regarded as the third light adjustment layer 123 .

That is, as shown in FIG. 5 , in some embodiments, the first light adjustment layer 121 , the second light adjustment layer 122 and the third light adjustment layer 123 are formed on the first light emitting diode chip 111 and the third light adjustment layer 123 respectively. on the second light-emitting diode chip 112 and the third light-emitting diode chip 113 . The first light adjustment layer 121, the second light adjustment layer 122 and the third light adjustment layer 123 can be used to adjust the first light emitting diode chip 111, the second light emitting diode chip 112 and the third light emitting diode chip 113. The first ray, the second ray and the third ray are emitted.

Referring to Figure 7, in some embodiments, a semi-cured reflective film 104' is provided. In some embodiments, the semi-cured reflective film 104' includes a reflective material and a semi-cured state (B-stage) adhesive (eg, thermosetting resin). The reflective material includes, for example, titanium dioxide (TiO ₂ ) or silicon oxide (SiO _x ), but the embodiments of the present disclosure are not limited thereto. For example, the semi-cured reflective film 104' may be a white semi-cured state (B-stage) glue material. Here, B-stage adhesive is a two-stage thermosetting adhesive that requires a second bake to be fully cured. B-stage refers to the reaction between the resin and the curing agent to form a semi-cured solid, which can become fully cured after being heated and cured.

Referring to Figures 7 and 8, in some embodiments, the semi-cured reflective film 104' is pressed down to directly contact the top surface 131bT of the first filter layer 131b, the top surface 132bT of the second filter layer 132b, and the transparent film 104'. The top surface 133T of the light extraction layer 133 and the top surface 114T of the control chip 114 split the semi-cured reflective film 104' onto the first temporary substrate 100 and cover the side surfaces of the first light extraction layer 120a and the second light extraction layer 120b. The side surface of the third light extraction layer 120c, the side surface of the first wavelength conversion layer 131a, the side surface of the second wavelength conversion layer 132a, part of the side surface of the first filter layer 131b, part of the side surface of the second filter layer 131b, Part of the side surface of the transparent light extraction layer 133 and the top surface and side surface of the control chip 114 .

Next, as shown in Figure 8, in some embodiments, the semi-cured reflective film 104' is cured (e.g., re-baked) to form a flexible reflective layer 104 between the light-emitting diode wafers. Specifically, the flexible reflective layer 104 may be located between the first light-emitting diode chip 111 and the second light-emitting diode chip 112, and between the second light-emitting diode chip 112 and the third light-emitting diode chip 113. And the control chip 114 can be covered.

In addition, as shown in FIG. 8 , in some embodiments, the top surface 104T of the flexible reflective layer 104 is higher than the top surfaces of the first wavelength conversion layer 131 a and the second wavelength conversion layer 131 b but lower than the first filter layer 131 a and the top surface of the second wavelength conversion layer 131 b. The top surface 131bT of the optical layer 131b and the top surface 132bT of the second filter layer 132b. In some embodiments, the flexible reflective layer 104 surrounds at least two-thirds of the thickness of the first filter layer 131b and the second filter layer 132b, and the aforementioned thickness is determined by the bottom surface of the first filter layer 131b or the second filter layer 131b. Starting from the bottom surface of layer 132b. For example, the thickness H104 of the flexible reflective layer 104 is about 44 to 87 microns, but the embodiment of the present disclosure is not limited thereto.

Referring to Figure 9, in some embodiments, a semi-cured light-absorbing film 106' is provided. In some embodiments, the semi-cured light-absorbing film 106' includes a light-absorbing material and a semi-cured state (B-stage) glue material (for example, thermosetting resin). The light-absorbing material includes, for example, black carbon powder, but the embodiment of the present disclosure is not limited thereto. For example, the semi-cured light-absorbing film 106' can be a black semi-cured state (B-stage) glue material. The example of B-stage adhesive material is as mentioned above and will not be repeated here.

Referring to Figures 9 and 10, in some embodiments, the semi-cured light-absorbing film 106' is pressed down to directly contact the first filter layer 131b, the second filter layer 132b, and the transparent light-trapping layer 133, so that the semi-cured light-absorbing film 106' The light-absorbing film 106' is shunted to the top surface 104T of the flexible reflective layer 104 and covers the first filter layer 131b, the second filter layer 132b and the remaining exposed side surfaces of the transparent light-trapping layer 133.

Next, as shown in Figure 10, in some embodiments, the semi-cured light-absorbing film 106' is cured to form a flexible light-shielding layer 106 on the flexible reflective layer 104. Specifically, the flexible light shielding layer 106 may be located between the first filter layer 131b and the second filter layer 132b, between the second filter layer 132b and the transparent light extraction layer 133, and may be located above the control chip 114.

In addition, as shown in Figure 10, in some embodiments, the top surface 106T of the flexible light-shielding layer 106, the top surface 131bT of the first filter layer 131b, and the top surface 132bT of the second filter layer 132b are substantially flush with each other. . In some embodiments, the ratio of the thickness of the flexible light-shielding layer 106 to the thickness of the first filter layer 131b or the second filter layer 132b is less than or equal to about 1/3. For example, the thickness H106 of the flexible light-shielding layer 106 is about 3 to 6 microns, but the embodiment of the present disclosure is not limited thereto.

Here, the flexible reflective layer 104 and the flexible light-shielding layer 106 can be regarded as the flexible composite laminate 103 . That is, as shown in FIGS. 7 to 10 , in some embodiments, a plurality of flexible composite laminates 103 are formed on the first temporary substrate 100 , and the flexible composite laminates 103 are disposed on the first light emitting diode. between the bulk chip 111 and the second light-emitting diode chip 112, and between the second light-emitting diode chip 112 and the third light-emitting diode chip 113. Additionally, in some embodiments, the control die 114 is covered by some flexible composite laminates 103 .

Referring to Figure 11, in some embodiments, a second temporary substrate 108 is provided, and the second temporary substrate 108 is bonded to the first light adjustment layer 121, the second light adjustment layer 122, the third light adjustment layer 123 and the flexible composite laminate. The top surface of layer 103. The second temporary substrate 108 may be made of the same or similar material as the first temporary substrate 100 , but the embodiment of the present disclosure is not limited thereto. In addition, as shown in FIG. 11 , the release layer 120 may be formed between the second temporary substrate 108 and the first light adjustment layer 121 (the second light adjustment layer 122 , the third light adjustment layer 123 or the flexible composite laminate 103 ). between.

Next, as shown in FIG. 11 , in some embodiments, the first temporary substrate 100 is removed from the first light-emitting diode chip 111 , the second light-emitting diode chip 112 , and the third light-emitting diode chip 113 (, The control die 114) and the backside of the flexible composite stack 103 are removed. For example, the first temporary substrate 100 can be detached by irradiating the detachment layer 102 with light of a specific wavelength, but the embodiment of the present disclosure is not limited thereto.

Referring to Figure 12, in some embodiments, the first light-emitting diode chip 111, the second light-emitting diode chip 112, the third light-emitting diode chip 113 (, control chip 114) and the flexible composite stack 103 A thin insulating layer 110 is formed on the back side. For example, the thin insulating layer 110 may include an insulating material, such as an oxide of silicon oxide, a nitride such as silicon nitride, similar materials, or a combination of the foregoing, but the embodiment of the present disclosure is not limited thereto. The insulating material can be deposited on the first light-emitting diode chip 111 and the second light-emitting diode through, for example, metal organic chemical vapor deposition, atomic layer deposition, molecular beam epitaxy, liquid phase epitaxy, similar processes or a combination of the above. A thin insulating layer 110 is formed on the back side of the chip 112, the third light emitting diode chip 113 (and the control chip 114) and the flexible composite laminate 103, but the embodiment of the present disclosure is not limited thereto.

Referring to Figure 13, in some embodiments, the thin insulating layer 110 is patterned to expose at least a portion of the electrodes 111a, 111b of the first light-emitting diode chip 111, the electrodes 112a, 112a, and 112 of the second light-emitting diode chip 112. At least a part of 112b, at least a part of the electrodes 113a, 113b of the third light emitting diode chip 113, and at least a part of the electrodes 114a, 114b of the control chip 114. In some embodiments, the thickness of the thin insulating layer 110 ranges from about 10 to 50 microns.

For example, a mask layer HM can be disposed on the thin insulating layer 110, and then the mask layer HM is used as an etching mask to perform an etching process to etch a plurality of trenches into the thin insulating layer 110. The mask layer HM may include a photoresist, such as a negative photoresist (or a positive photoresist in other examples). In addition, the mask layer HM may include a hard mask, and may be made of silicon oxide (SiO ₂ ), silicon nitride (SiN), silicon oxynitride (SiON), silicon carbide (SiC), silicon nitride carbide (SiCN), or the like. Materials or a combination of the foregoing. The mask layer HM may be a single layer or a multi-layer structure.

Referring to FIG. 14 , in some embodiments, a plurality of conductive structures 116 are formed in a plurality of trenches of the patterned thin insulating layer 110 . As shown in FIG. 14 , in some embodiments, each conductive structure 16 passes through the thin insulating layer 110 from the backside 110B of the thin insulating layer 110 and is connected to the corresponding first light emitting diode chip 111 and the second light emitting diode. Corresponding electrodes in the pole chip 112, the third light-emitting diode chip 113 or the control chip 114 are electrically connected.

For example, the conductive structure 16 can pass through the thin insulating layer 110 from the backside 110B of the thin insulating layer 110 and be electrically connected to the electrodes 111a and 111b of the first light-emitting diode chip 111 and to the second light-emitting diode chip 112 The electrodes 112a and 112b are electrically connected to the electrodes 113a and 113b of the third light-emitting diode chip 113 and to the electrodes 114a and 114b of the control chip 114, but the embodiment of the disclosure is not limited thereto. . The conductive structure 116 may include metal. Examples of metal are as mentioned above and will not be repeated here, but the embodiment of the present disclosure is not limited thereto.

Here, the thin insulating layer 110 and the conductive structure 116 can be regarded as the flexible redistribution layer 109 . That is, as shown in FIGS. 12 to 14 , in some embodiments, the first light-emitting diode chip 111 , the second light-emitting diode chip 112 , and the third light-emitting diode chip 113 (, control A flexible redistribution layer 109 is formed on the backside of the wafer 114) and the flexible composite stack 103.

Referring to FIGS. 14 and 15 , the second temporary substrate 108 is removed from the top surfaces of the first light adjustment layer 121 , the second light adjustment layer 122 , the third light adjustment layer 123 and the flexible composite stack 103 . Next, the first LED chip 111 , the second LED chip 112 , the third LED chip 113 , the control chip 114 , the flexible composite stack 103 and the flexible redistribution layer 109 are transferred to the cutting substrate 118 superior. The cutting substrate 118 may be the same as or similar to the first temporary substrate 100 or the second temporary substrate 108 and will not be repeated here, but the embodiment of the present disclosure is not limited thereto.

As shown in Figure 15, the first light-emitting diode chip 111, the second light-emitting diode chip 112, the third light-emitting diode chip 113, the control chip 114, the flexible composite laminate 103 and the flexible redistribution layer 109 Cut into multiple pixel packages PP. In some embodiments, the pixel package PP is a flexible pixel package. As shown in FIG. 15 , in some embodiments, the flexible reflective layer 104 is disposed on the flexible redistribution layer 109 , and the flexible light-shielding layer 106 is disposed on the flexible reflective layer 104 .

FIG. 16 is a partial top view of a display device 1 using a pixel package PP according to some embodiments of the present disclosure. Referring to FIG. 16 , after forming a plurality of pixel packages PP (for example, after completing the cutting step of FIG. 15 ), the plurality of pixel packages PP are transferred to the circuit substrate 10 in large quantities.

For example, the circuit substrate 10 may be a rigid circuit substrate, which may include elemental semiconductors (eg, silicon or germanium), compound semiconductors (eg, silicon carbide (SiC), gallium arsenide (GaAs), indium arsenide (InAs) Or indium phosphide (InP)), alloy semiconductors (for example, SiGe, SiGeC, GaAsP or GaInP), other suitable semiconductors or combinations of the foregoing. The circuit substrate 10 may also be a flexible circuit substrate, a semiconductor-on-insulator (SOI) substrate, a glass substrate, or the like. In addition, the circuit substrate 10 may include various conductive components (eg, conductive lines or vias) (not shown). For example, the aforementioned conductive component may include aluminum (Al), copper (Cu), tungsten (W), their respective alloys, other appropriate conductive materials, or combinations thereof.

FIG. 17 is a partial cross-sectional view of the display device 1 when the circuit substrate 10 is a flexible circuit substrate according to some embodiments of the present disclosure. In some embodiments, since the flexible redistribution layer is very thin (eg, about 10 to 50 microns thick), the flexible composite laminate is an elastic material, and the first light-emitting diode chip 111 and the second light-emitting diode chip 112. The third light-emitting diode chip 113 and the control chip 114 are both very small (for example, a microchip with a thickness of about 6 to 15 microns), so that the overall thickness of the pixel package PP can be less than or equal to about 100 microns. Therefore, the pixel package PP can be regarded as a flexible pixel package, which is beneficial for application in flexible display devices, such as wearable display devices.

Based on the above description, the pixel package of the embodiment of the present disclosure may be an active micro light-emitting diode pixel package, which may be controlled individually/independently. In addition, the pixel package of the embodiment of the present disclosure includes a flexible composite laminate, which can effectively improve the luminous efficiency of the pixel package and enhance the contrast ratio. In some embodiments, the pixel package of the present disclosure converts the light emitted by the light-emitting diode chip (for example, the light-emitting diode chip that emits ultraviolet light) into light of a specific wavelength through the wavelength conversion layer. Under the requirements of color uniformity, compared with traditional pixel packages, the process yield is better, and it has the advantages of high color point concentration and low color point deviation.

The components of several embodiments are summarized above so that those with ordinary skill in the technical field to which the present disclosure belongs can better understand the concepts of the embodiments of the present disclosure. Those with ordinary skill in the art to which this disclosure belongs should understand that they can design or modify other processes and structures based on the embodiments of this disclosure to achieve the same purposes and/or advantages as the embodiments introduced here. Those with ordinary knowledge in the technical field to which this disclosure belongs should also understand that such equivalent structures do not deviate from the spirit and scope of this disclosure, and they can do various things without departing from the spirit and scope of this disclosure. Various changes, substitutions and substitutions. Therefore, the protection scope of the present disclosure shall be subject to the scope of the appended patent application. In addition, although the disclosure has been disclosed with several preferred embodiments as above, this is not intended to limit the disclosure.

Reference throughout this specification to features, advantages, or similar language does not imply that all features and advantages that may be realized with the present disclosure should or can be realized in any single embodiment of the present disclosure. In contrast, language referring to features and advantages is to be understood to mean that a particular feature, advantage, or characteristic described in connection with the embodiment is included in at least one embodiment of the present disclosure. Thus, discussions of features and advantages, and similar language, throughout this specification may, but are not necessarily, representative of the same embodiments.

Furthermore, the described features, advantages, and characteristics of the disclosure may be combined in any suitable manner in one or more embodiments. From the description herein, those skilled in the relevant art will appreciate that the present disclosure may be practiced without one or more of the specific features or advantages of a particular embodiment. In other instances, additional features and advantages may be identified in certain embodiments that may not be present in all embodiments of the present disclosure.

1:Display device 10:Circuit substrate 100: First temporary substrate 102: Detachment layer 103:Flexible composite laminate 104:Flexible reflective layer 104’: semi-cured reflective film 106: Flexible light shielding layer 106’: Semi-cured light-absorbing film 106T: Top surface of flexible light shielding layer 108: Second temporary substrate 109:Flexible rewiring layer 110:Thin insulation layer 110B: Back side of thin insulation layer 111: The first light-emitting diode chip 111a,111b:Electrode 112: The second light-emitting diode chip 112a,112b:Electrode 113: The third light-emitting diode chip 113a,113b:Electrode 114:Control chip 114a,114b:Electrode 114T: Control the top surface of the chip 116:Conductive structure 118: Cutting the substrate 120a: First light extraction layer 120b: Second light extraction layer 120c: The third light extraction layer 121: First light adjustment layer 122: Second light adjustment layer 123: The third light adjustment layer 131: First color conversion composite layer 131a: First wavelength conversion layer 131a’: red quantum dot film 131b: First filter layer 131b’: filter layer 131bT: Top surface of the first filter layer 132: Second color conversion composite layer 132a: Second wavelength conversion layer 132b: Second filter layer 132bT: Top surface of the second filter layer 133:Transparent light-taking layer 133T: The top surface of the transparent light-taking layer A-A’: line B: backlight point CS: Carrier substrate H104: Thickness of flexible reflective layer H106: Thickness of flexible light-shielding layer HM: mask layer PP: pixel package TH: transfer head

The embodiments of the disclosure will be described in detail below with reference to the accompanying drawings. It should be noted that various features are not drawn to scale and are for illustrative purposes only. In fact, the dimensions of the components may be enlarged or reduced to clearly demonstrate the technical features of the embodiments of the present disclosure. Figure 1 is a partial top view of a pixel package according to some embodiments of the present disclosure. Figure 2 is a partial cross-sectional view of a pixel package according to some embodiments of the present disclosure. Figures 3 to 5 are partial cross-sectional views illustrating various stages of forming a pixel package according to some embodiments of the present disclosure. Figures 6A to 6E are schematic diagrams illustrating various stages of forming and transferring a first color conversion composite layer according to some embodiments of the present disclosure. 7 to 15 are partial cross-sectional views illustrating various stages of forming a pixel package according to some embodiments of the present disclosure. FIG. 16 is a partial top view of a display device using a pixel package according to some embodiments of the present disclosure. FIG. 17 is a partial cross-sectional view of a display device when the circuit substrate is a flexible circuit substrate according to some embodiments of the present disclosure.

103:Flexible composite laminate

104:Flexible reflective layer

106: Flexible light shielding layer

106T: Top surface of flexible light shielding layer

109:Flexible rewiring layer

110:Thin insulation layer

110B: Back side of thin insulation layer

111: The first light-emitting diode chip

111a,111b:Electrode

112: The second light-emitting diode chip

112a,112b:Electrode

113: The third light-emitting diode chip

113a,113b:Electrode

114:Control chip

114a,114b:Electrode

116:Conductive structure

120a: First light extraction layer

120b: Second light extraction layer

120c: The third light extraction layer

121: First light adjustment layer

122: Second light adjustment layer

123: The third light adjustment layer

131: First color conversion composite layer

131a: First wavelength conversion layer

131b: First filter layer

131bT: Top surface of the first filter layer

132: Second color conversion composite layer

132a: Second wavelength conversion layer

132b: Second filter layer

132bT: Top surface of the second filter layer

133:Transparent light-taking layer

PP: pixel package

Claims (25)

A pixel package including: a flexible rewiring layer; A plurality of light-emitting diode chips are arranged on the surface of the flexible redistribution layer in a flip-chip manner; A plurality of light adjustment layers are respectively located on the light-emitting diode chips; and A plurality of flexible composite laminates are disposed on the surface of the flexible redistribution layer and between the light-emitting diode wafers. For example, the pixel package of request item 1 further includes: A control chip is disposed on the surface of the flexible redistribution layer and covered by one of the flexible composite stacks. The pixel package of claim 1, wherein the light-emitting diode chips emit blue light or ultraviolet light. The pixel package of claim 3, wherein the light-emitting diode chips include a first light-emitting diode chip, a second light-emitting diode chip and a third light-emitting diode chip, and the first light-emitting diode chip The polar body chip, the second light-emitting diode chip and the third light-emitting diode chip respectively emit a first light, a second light and a third light, and the light adjustment layers include a first light adjustment layer , a second light adjustment layer and a third light adjustment layer, the first light adjustment layer, the second light adjustment layer and the third light adjustment layer are respectively provided on the first light emitting diode chip, the second light adjustment layer on the light-emitting diode chip and the third light-emitting diode chip. The pixel package of claim 4, wherein the first light adjustment layer, the second light adjustment layer and the third light adjustment layer each include a first light extraction layer, a second light extraction layer and a third light extraction layer. Extraction layer, the first light extraction layer, the second light extraction layer and the third light extraction layer are respectively provided on the first light-emitting diode chip, the second light-emitting diode chip and the third light-emitting diode on the bulk chip. Such as the pixel package of request item 5, wherein The first light adjustment layer further includes a first wavelength conversion layer and a first filter layer. The first wavelength conversion layer is located on the first light extraction layer and absorbs part of the first light and converts it into a red light. The first filter layer is located on the first wavelength conversion layer; and The second light adjustment layer further includes a second wavelength conversion layer and a second filter layer. The second wavelength conversion layer is located on the second light extraction layer and absorbs part of the second light and converts it into a green light. The second filter layer is located on the second wavelength conversion layer; The first wavelength conversion layer and the second wavelength conversion layer include phosphor, quantum dot material or a combination thereof. The pixel package of claim 6, wherein each flexible composite laminate includes a flexible reflective layer and a flexible light-shielding layer, the flexible reflective layer is disposed on the flexible rewiring layer, and the flexible light-shielding layer is disposed on the flexible reflective layer. layer, and the top surface of the flexible reflective layer is higher than the top surface of the first wavelength conversion layer and the top surface of the second wavelength conversion layer. The pixel package of claim 7, wherein the top surface of the flexible light-shielding layer, the top surface of the first filter layer and the top surface of the second filter layer are flush with each other. The pixel package of claim 7, wherein the flexible reflective layer surrounds at least two-thirds of the thickness of the first filter layer and the second filter layer, and the thickness is determined by the thickness of the first filter layer. starting from the bottom surface or the bottom surface of the second filter layer. The pixel package of claim 9, wherein the ratio of the thickness of the flexible light-shielding layer to the thickness of the first filter layer or the thickness of the second filter layer is less than or equal to 1/3. As in the pixel package of claim 7, the material of the flexible reflective layer includes reflective material and thermosetting resin, and the material of the flexible light-shielding layer includes light-absorbing material and thermosetting resin. The pixel package of claim 1, wherein the flexible redistribution layer includes a thin insulating layer and a plurality of conductive structures, and each of the conductive structures passes through the insulating layer and the light-emitting diodes from the back side of the thin insulating layer. A corresponding electrical connection in the chip, and the thickness of the thin insulating layer ranges from 10 to 50 microns. For example, the pixel package of request item 6 further includes: A transparent light extraction layer is provided on the third light extraction layer, wherein the top surface of the transparent light extraction layer, the top surface of the first filter layer, the top surface of the second filter layer and the flexible light shielding layer The top surfaces of the LEDs are flush with each other, and the third LED emits blue light. For example, the pixel package of request item 6 further includes: A third wavelength conversion layer is provided on the third light extraction layer, wherein the third wavelength conversion layer absorbs part of the third light and converts it into a blue light, and the third wavelength conversion layer includes phosphor or quantum dot material or its combination. A method for forming a pixel package, including: providing a first temporary substrate; Transfer a plurality of flip-chip light-emitting diode wafers to the first temporary substrate; Form a plurality of light adjustment layers on the light-emitting diode wafers; Forming a plurality of flexible composite laminates on the first temporary substrate, wherein the flexible composite laminates are disposed between the light-emitting diode wafers; Provide a second temporary substrate, wherein the second temporary substrate is bonded to the top surfaces of the light adjustment layers and the flexible composite laminates; removing the first temporary substrate from the backside of the light emitting diode wafers and the flexible composite stacks; Forming a flexible redistribution layer on the backside of the light-emitting diode wafers and the flexible composite stacks; and The second temporary substrate is removed from the light adjustment layers and the top surfaces of the light adjustment layers. For example, the method for forming the pixel package of claim 15 further includes: When the light emitting diode wafers are transferred to the first temporary substrate, a plurality of control wafers are transferred to the first temporary substrate, wherein the control wafers are respectively covered by some of the flexible composite stacks. The method for forming a pixel package as claimed in claim 15, wherein forming the light adjustment layers includes: forming a plurality of light extraction layers on the light-emitting diode wafers; The first color conversion composite layer composed of a first wavelength conversion layer and a first filter layer is transferred to a part of the light extraction layers, wherein the first wavelength conversion layer is on the light extraction layer, and the The first filter layer is on the first wavelength conversion layer; transferring a second color conversion composite layer composed of a second wavelength conversion layer and a second filter layer to another part of the light extraction layers, wherein the second wavelength conversion layer is on the light extraction layer, And the second filter layer is on the second wavelength conversion layer. The method for forming a pixel package of claim 17, wherein the light extraction layers are compliantly formed on the top and side surfaces of the light emitting diode wafers. The method of forming a pixel package according to claim 17, wherein the first wavelength conversion layer and the second wavelength conversion layer each include phosphor, quantum dot material or a combination thereof. The method for forming a pixel package of claim 19, wherein the light-emitting diode chips emit blue light or ultraviolet light, and the first wavelength conversion layer is used to convert a first light-emitting diode from the light-emitting diode chips. A first light portion of the polar body chip is converted into red light, and the second wavelength conversion layer is used to convert a second light portion from a second light-emitting diode chip among the light-emitting diode chips. For green light. As in claim 20, the method for forming a pixel package, wherein forming the light adjustment layers further includes: The third color conversion composite layer composed of a third wavelength conversion layer and a third filter layer is transferred to part of the light extraction layers, wherein the third wavelength conversion layer is on the light extraction layer, and the third color conversion composite layer is The filter layer is on the third wavelength conversion layer, and the third wavelength conversion layer is used to convert a third light portion from a third light-emitting diode chip among the light-emitting diode chips into blue light. The method of forming a pixel package as claimed in claim 18, wherein the method of forming the flexible composite laminates includes: Provide half-cured reflective film; The semi-cured reflective film is pressed down to directly contact the first filter layer and the second filter layer, so that the semi-cured reflective film is shunted onto the first temporary substrate and covers the sides of the light extraction layers, The side surfaces of the first filter layer and the side surfaces of the second filter layer; The semi-cured reflective film is cured to form a flexible reflective layer between the light-emitting diode chips, wherein the top surface of the flexible reflective layer is higher than the top surface of the first wavelength conversion layer and the second wavelength conversion layer The top surface is but lower than the top surface of the first filter layer and the top surface of the second filter layer; Provide half-cured light-absorbing film; The semi-cured light-absorbing film is pressed down to directly contact the first filter layer and the second filter layer, so that the semi-cured light-absorbing film is shunted onto the flexible reflective layer and covers the first filter layer and the second filter layer. The remaining exposed sides of the second filter layer; and The semi-cured light-absorbing film is cured to form a flexible light-shielding layer on the flexible reflective layer, wherein the top surface of the flexible light-shielding layer, the top surface of the first filter layer and the top surface of the second filter layer are aligned with each other. flat. The method for forming a pixel package of claim 22, wherein the semi-cured reflective film includes a reflective material and a semi-cured adhesive material, and the semi-cured light-absorbing film includes a light-absorbing material and a semi-cured adhesive material. The method for forming a pixel package of claim 20, wherein the flexible redistribution layer includes a thin insulating layer and a plurality of conductive structures, each of the conductive structures passes through the thin insulating layer from the back side of the thin insulating layer and is connected to the thin insulating layer. Corresponding one of the light-emitting diode chips is electrically connected, and the thickness of the thin insulating layer ranges from 10 to 50 microns. A display device including: a circuit substrate; and A plurality of pixel packages as in any one of claims 1 to 14 are provided on the circuit substrate.

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