TW202335139A - Heat treatment device and heat treatment method capable of maintaining the cleanliness inside a chamber and improving the quality of work-pieces without reducing productivity - Google Patents

Heat treatment device and heat treatment method capable of maintaining the cleanliness inside a chamber and improving the quality of work-pieces without reducing productivity Download PDF

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TW202335139A
TW202335139A TW112103978A TW112103978A TW202335139A TW 202335139 A TW202335139 A TW 202335139A TW 112103978 A TW112103978 A TW 112103978A TW 112103978 A TW112103978 A TW 112103978A TW 202335139 A TW202335139 A TW 202335139A
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heat treatment
heating
chamber
workpiece
gas
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TW112103978A
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TWI819961B (en
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高橋崇史
磯明典
武藤真
木村哲明
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日商芝浦機械電子裝置股份有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67109Apparatus for thermal treatment mainly by convection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67115Apparatus for thermal treatment mainly by radiation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67126Apparatus for sealing, encapsulating, glassing, decapsulating or the like

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
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  • Heating, Cooling, Or Curing Plastics Or The Like In General (AREA)

Abstract

The present invention provides a heat treatment device and a heat treatment method, which can maintain the cleanliness inside a chamber and improve the quality of work-pieces without reducing productivity. The heat treatment device (1) according to an embodiment of the present invention includes: a chamber (10) capable of maintaining an atmosphere lower than the atmospheric pressure; an exhaust part (40) connected to the chamber (10) for exhausting the inside of the chamber (10); a support part (30) for supporting the work-piece (W) accommodated in the chamber (10); a heating part (50) for performing a first heating to heat the work-piece (W) while the work-piece (W) is supported by the support part (30), and performing a second heating to heat the inside of the chamber (10) at a temperature increase rate faster than that of the first heating while the work-piece (W) is not supported by the support part (30); and a gas supply part (60) for performing cooling by supplying gas into the chamber after the first heating and after the second heating.

Description

熱處理裝置以及熱處理方法Heat treatment device and heat treatment method

本發明有關一種熱處理裝置以及熱處理方法。The present invention relates to a heat treatment device and a heat treatment method.

在平板顯示器(Flat Panel Display,FPD)的製造或半導體元件等的製造中,進行下述操作:使塗布有包含有機材料與溶劑的溶液的工件乾燥,從而在工件上形成所期望的膜。作為用於進行乾燥的裝置,例如使用下述熱處理裝置,其包括:腔室,可維持比大氣壓減壓的環境;以及加熱器,對設在腔室內部的工件進行加熱。此種熱處理裝置除了在工件的表面形成膜以外,還用於對工件的表面進行處理。In the production of flat panel displays (FPD) or semiconductor elements, a workpiece coated with a solution containing an organic material and a solvent is dried to form a desired film on the workpiece. As a device for drying, for example, a heat treatment device including a chamber capable of maintaining an environment at a pressure lower than atmospheric pressure and a heater for heating a workpiece provided inside the chamber is used. In addition to forming a film on the surface of the workpiece, this type of heat treatment device is also used to treat the surface of the workpiece.

當反復進行對工件的熱處理時,來源於工件表面所含的物質而在腔室內產生昇華物。例如,當對工件進行加熱時,工件表面所含的物質氣化,因此有時會在溫度比經加熱的工件低的腔室的內壁成為固體而附著。當像這樣附著於內壁的物質從腔室的內壁剝落時,會成為顆粒而附著於工件的表面,因此導致工件的品質下降。When the workpiece is repeatedly heat treated, sublimates are generated in the chamber originating from substances contained on the surface of the workpiece. For example, when a workpiece is heated, a substance contained on the surface of the workpiece vaporizes, and may become solid and adhere to the inner wall of a chamber whose temperature is lower than that of the heated workpiece. When the substance adhered to the inner wall peels off from the inner wall of the chamber, it becomes particles and adheres to the surface of the workpiece, thereby causing a deterioration in the quality of the workpiece.

而且,當對工件進行加熱時,腔室內成為高溫,因此腔室內的構件因熱而膨脹。進而,在加熱後進行冷卻時,腔室內的構件將收縮。當構件反復膨脹與收縮時,構件彼此摩擦而產生顆粒。此種顆粒也會在熱處理中附著於工件,或者附著於腔室內壁的顆粒剝落而附著於工件,由此成為工件的品質下降的原因。Furthermore, when the workpiece is heated, the temperature inside the chamber becomes high, so the members in the chamber expand due to heat. Furthermore, when cooling is performed after heating, the components in the chamber will shrink. As the components repeatedly expand and contract, the components rub against each other creating particles. Such particles may adhere to the workpiece during heat treatment, or the particles adhered to the inner wall of the chamber may peel off and adhere to the workpiece, thereby causing a decrease in the quality of the workpiece.

為了應對此情況,需要定期地或者根據顆粒的附著量、品質的下降程度等來去除附著於腔室內壁等的顆粒的維護。 [現有技術文獻] [專利文獻] In order to cope with this situation, maintenance is required to remove particles adhered to the inner wall of the chamber, etc. periodically or based on the amount of particles adhered, the degree of quality degradation, etc. [Prior art documents] [Patent Document]

[專利文獻1]國際公開第2019/117250號[Patent Document 1] International Publication No. 2019/117250

[發明所欲解決之課題][Problem to be solved by the invention]

在如上所述的維護的期間,無法進行工件的加熱處理。因此,若維護的時間長或次數多,則生產性會大幅下降。During maintenance as described above, heat treatment of the workpiece cannot be performed. Therefore, if maintenance takes a long time or occurs frequently, productivity will drop significantly.

本發明的實施方式是為了解決如上所述的問題而完成,其目的在於提供一種熱處理裝置以及熱處理方法,不會使生產性下降而確保腔室內的潔淨度,提高工件的品質。 [解決課題之手段] Embodiments of the present invention are made to solve the above-mentioned problems, and its purpose is to provide a heat treatment apparatus and a heat treatment method that ensure cleanliness in a chamber and improve the quality of workpieces without reducing productivity. [Means to solve the problem]

本發明的實施方式的熱處理裝置包括:腔室,能夠維持比大氣壓減壓的環境;排氣部,連接於所述腔室,對所述腔室內進行排氣;支撐部,支撐被收容在所述腔室內的工件;加熱部,進行在所述工件被支撐於所述支撐部的狀態下對所述工件進行加熱的第一加熱,且進行在所述工件未被支撐於所述支撐部的狀態下以比所述第一加熱快的升溫速度對所述腔室內進行加熱的第二加熱;以及供氣部,在所述第一加熱後以及所述第二加熱後,對腔室內供給氣體,由此來進行冷卻。The heat treatment device according to the embodiment of the present invention includes: a chamber capable of maintaining an environment at a pressure lower than atmospheric pressure; an exhaust unit connected to the chamber for exhausting the chamber; and a support unit that supports the housing accommodated therein. The workpiece in the chamber; the heating unit performs first heating for heating the workpiece while the workpiece is supported on the support unit, and performs heating when the workpiece is not supported on the support unit. a second heating that heats the chamber at a faster temperature rise rate than the first heating; and a gas supply unit that supplies gas into the chamber after the first heating and after the second heating. , thereby cooling.

本發明的實施方式的熱處理方法包括:第一熱處理,在工件被支撐於經減壓的腔室內的支撐部的狀態下,加熱部對所述工件進行加熱後,供氣部供給氣體而進行冷卻;工件排出處理,在所述第一熱處理後,從所述腔室中排出所述工件;以及第二熱處理,在所述工件未被支撐於所述支撐部的狀態下,所述加熱部通過比所述第一熱處理快的升溫速度對所述腔室內進行加熱後,所述供氣部供給所述氣體而進行冷卻,排氣部對所述腔室內進行排氣。 [發明的效果] The heat treatment method according to the embodiment of the present invention includes a first heat treatment in which a heating unit heats the workpiece while the workpiece is supported on a support portion in a depressurized chamber, and the gas supply unit supplies gas to cool the workpiece. ; Workpiece discharge processing, after the first heat treatment, the workpiece is discharged from the chamber; and second heat treatment, in a state where the workpiece is not supported by the support part, the heating part passes After the chamber is heated at a temperature rise rate faster than that of the first heat treatment, the gas supply part supplies the gas for cooling, and the exhaust part exhausts the chamber. [Effects of the invention]

根據本發明的實施方式,能夠提供一種熱處理裝置以及熱處理方法,不會使生產性下降而確保腔室內的潔淨度,提高工件的品質。According to the embodiment of the present invention, it is possible to provide a heat treatment device and a heat treatment method that ensure the cleanliness in the chamber and improve the quality of the workpiece without reducing productivity.

參照附圖來說明實施方式的熱處理裝置。 [第一實施方式] [概要] 如圖1所示,第一實施方式的熱處理裝置1是在比大氣壓減壓的環境下對工件W進行加熱,而在工件W的表面形成有機膜的裝置。加熱處理前的工件W是在表面塗布有溶液的基板。基板例如為玻璃基板或半導體晶片。溶液為包含有機材料的溶劑。例如,可將包含聚醯胺酸的清漆作為溶液。 The heat treatment apparatus according to the embodiment will be described with reference to the drawings. [First Embodiment] [summary] As shown in FIG. 1 , the heat treatment device 1 of the first embodiment is a device that heats a workpiece W in an environment at a pressure lower than atmospheric pressure to form an organic film on the surface of the workpiece W. The workpiece W before heat treatment is a substrate with a solution coated on the surface. The substrate is, for example, a glass substrate or a semiconductor wafer. A solution is a solvent containing organic materials. For example, a varnish containing polyamic acid can be used as a solution.

工件W在熱處理裝置1中進行熱處理,由此,溶液中的聚醯胺酸經醯亞胺化,而在基板的表面形成聚醯亞胺膜。另外,工件W在被搬入至熱處理裝置1之前,在上游的步驟中被搬入至未圖示的臨時煆燒裝置,溶液經臨時煆燒而成為半固化狀態。在臨時煆燒中,例如在90℃以下、100 Pa左右的壓力環境中放置三分鐘以上,由此,預先使溶劑的一部分從溶液中蒸發。When the workpiece W is heat-treated in the heat treatment apparatus 1, the polyimide in the solution is imidized, and a polyimide film is formed on the surface of the substrate. In addition, before being carried into the heat treatment apparatus 1, the workpiece W is carried into a temporary baking apparatus (not shown) in an upstream step, and the solution is temporarily baked into a semi-solidified state. In the temporary calcination, a part of the solvent is evaporated from the solution in advance by leaving it in a pressure environment of 90° C. or lower and about 100 Pa for three minutes or more.

另外,各圖中的X方向、Y方向以及Z方向表示彼此正交的三方向。本實施方式中,X方向為左右方向,Y方向為前後方向,Z方向為上下方向。但這些方向並非限定熱處理裝置1的設置方向。In addition, the X direction, the Y direction, and the Z direction in each figure represent three directions that are orthogonal to each other. In this embodiment, the X direction is the left-right direction, the Y-direction is the front-rear direction, and the Z-direction is the up-down direction. However, these directions do not limit the installation direction of the heat treatment apparatus 1 .

[結構] 如圖1至圖3所示,熱處理裝置1具有腔室10、匣盒20、支撐部30、排氣部40、加熱部50、供氣部60以及控制裝置70。 [structure] As shown in FIGS. 1 to 3 , the heat treatment apparatus 1 has a chamber 10 , a cassette 20 , a support part 30 , an exhaust part 40 , a heating part 50 , a gas supply part 60 and a control device 70 .

(腔室) 腔室10為箱狀的容器,且具有能夠以可維持比大氣壓減壓的環境的方式而設為氣密的結構。在腔室10的前後設有開口10a、開口10b,在開口10a、開口10b,分別形成有設有О型環等密封材料10c的凸緣10d、凸緣10e。 (Chamber) The chamber 10 is a box-shaped container and has a structure that can be made airtight so that an environment at a pressure lower than atmospheric pressure can be maintained. Openings 10a and 10b are provided at the front and rear of the chamber 10, and flanges 10d and 10e provided with sealing materials 10c such as О-rings are formed in the openings 10a and 10b, respectively.

相對於前方的開口10a,通過未圖示的開閉機構而驅動的開閉門11可在開位置與閉位置之間沿上下方向滑動移動地設置。當將開閉門11設為開位置時,開口10a的前方打開,能夠進行工件W的搬入搬出。With respect to the front opening 10a, an opening and closing door 11 driven by an opening and closing mechanism (not shown) is provided so as to be slidable in the up and down direction between an open position and a closed position. When the opening and closing door 11 is set to the open position, the front side of the opening 10a is opened, and the workpiece W can be loaded and unloaded.

而且,開閉機構通過使開閉門11沿前後方向移動,從而切換腔室10的密閉狀態以及開放狀態。密閉狀態是開閉門11經由開口10a的密封材料10c被按壓至開口10a,從而腔室10的內部氣密地受到密封的狀態。開放狀態是在開閉門11與開口10a的密封材料10c之間空開間隙,而腔室10的內部被大氣開放的狀態。Furthermore, the opening and closing mechanism switches the sealed state and the open state of the chamber 10 by moving the opening and closing door 11 in the front-rear direction. The sealed state is a state in which the opening and closing door 11 is pressed to the opening 10 a via the sealing material 10 c of the opening 10 a, and the inside of the chamber 10 is hermetically sealed. The open state is a state in which a gap is created between the opening and closing door 11 and the sealing material 10 c of the opening 10 a, and the inside of the chamber 10 is open to the atmosphere.

在後方的開口10b的凸緣10e,經由密封材料10c,使用未圖示的螺絲等的緊固構件而安裝有蓋15,由此,腔室10的內部氣密地受到密封。通過從腔室10拆卸蓋15,能夠使後述的匣盒20從開口10b出入以便維護。The lid 15 is attached to the flange 10e of the rear opening 10b via the sealing material 10c using a fastening member such as a screw (not shown), thereby airtightly sealing the inside of the chamber 10. By removing the cover 15 from the chamber 10, the cassette 20 described later can be put in and out through the opening 10b for maintenance.

(匣盒) 本實施方式中,工件W經由匣盒20而支撐在腔室10內。即,工件W被搬入搬出至沿水平方向支撐於腔室10內的匣盒20的內部。匣盒20在腔室10內沿上下方向多段地配置。各匣盒20相對於腔室10可拆裝地設置,以使得可從腔室10取出而各別地維護。 (box) In this embodiment, the workpiece W is supported in the chamber 10 via the cassette 20 . That is, the workpiece W is carried in and out into the inside of the cassette 20 supported in the chamber 10 in the horizontal direction. The cassette 20 is arranged in multiple stages in the up-down direction in the chamber 10 . Each cartridge 20 is detachably arranged relative to the chamber 10 so that it can be taken out of the chamber 10 and maintained separately.

如圖4所示,匣盒20是在前方具有進行工件W的搬入搬出的開口部20a的箱狀體,由上下左右的四方的面以及與開口部20a相向的面包圍被支撐於內部的工件W。另外,在圖4中,為了便於說明,未示出在匣盒20的上表面以及與開口部20a相向的面上所設的均熱板22。As shown in FIG. 4 , the cassette 20 is a box-shaped body having an opening 20 a at the front for loading and unloading the workpiece W. The cassette 20 is surrounded by four upper, lower, left, and right surfaces and a surface facing the opening 20 a to surround the workpiece supported inside. W. In addition, in FIG. 4 , for convenience of explanation, the vapor chamber 22 provided on the upper surface of the cassette 20 and the surface facing the opening 20 a is not shown.

匣盒20具有匣盒框架21、均熱板22、工件支撐部23、匣盒支撐部24。匣盒框架21是包含細長的構件的骨架結構。匣盒框架21為長方體的框形狀,在上表面以及下表面,沿X方向排列有多根架設在前後方向的梁21a。梁21a的根數並無特別限定,在本實施方式中設為四根。The cassette 20 has a cassette frame 21 , a vapor chamber 22 , a workpiece support part 23 , and a cassette support part 24 . The cassette frame 21 is a skeleton structure including elongated members. The cassette frame 21 is in the shape of a rectangular parallelepiped frame, and has a plurality of beams 21a extending in the front and rear directions along the X direction on the upper surface and the lower surface. The number of beams 21a is not particularly limited, but is set to four in this embodiment.

均熱板22構成匣盒20的包圍工件W的面,抑制傳遞至工件W的熱的偏頗。均熱板22例如是包含不銹鋼等的導熱率高的金屬材料的板狀構件。均熱板22被設在匣盒框架21的上下左右以及與開口部20a相向的面,由此構成箱狀體的匣盒20。The vapor chamber 22 constitutes the surface of the cassette 20 surrounding the workpiece W, and suppresses the unevenness of the heat transmitted to the workpiece W. The vapor chamber 22 is, for example, a plate-shaped member made of a metal material with high thermal conductivity such as stainless steel. The vapor chamber 22 is provided on the upper, lower, left and right sides of the cassette frame 21 and on the surface facing the opening 20a, thereby constituting the box-shaped cassette 20.

更具體而言,以填埋匣盒框架21的外框與四根梁21a之間的方式,在上下分別設有五片均熱板22。在匣盒框架21的左右各設有一片均熱板22。進而,在匣盒框架21的與開口部20a相向的面,設有一片均熱板22。這些均熱板22可作為匣盒20而一體地出入腔室10,因此與需要各別地拆卸、安裝的以往的均熱板相比,維護變得容易。而且,在開閉門11的內側也設有均熱板22,通過開閉門11移動至閉位置,可包圍工件W的上下以及四方。另外,匣盒框架21與均熱板22並非嚴格地密接,而是空開有可供氣體通過的間隙,因此在通過排氣部40對腔室10的內部進行排氣時,對於由均熱板22所包圍的支撐工件W的區域也能夠進行排氣。More specifically, five vapor chambers 22 are provided at the top and bottom so as to be filled between the outer frame of the cassette frame 21 and the four beams 21 a. A uniform heat plate 22 is provided on the left and right sides of the box frame 21 respectively. Furthermore, one heat chamber 22 is provided on the surface of the cassette frame 21 facing the opening 20a. These vapor chambers 22 can be integrated into and out of the chamber 10 as the cassette 20, so maintenance is easier compared to conventional vapor chambers that need to be separately disassembled and installed. Moreover, a vapor chamber 22 is also provided inside the opening/closing door 11. When the opening/closing door 11 is moved to the closed position, the upper, lower and four sides of the workpiece W can be surrounded. In addition, the cassette frame 21 and the equalizing plate 22 are not strictly in close contact with each other, but have a gap for gas to pass through. Therefore, when the inside of the chamber 10 is exhausted through the exhaust part 40, the heat equalizing plate 22 is not in strict contact with the chamber 10. The area surrounded by the plate 22 supporting the workpiece W can also be vented.

工件支撐部23支撐工件W。工件支撐部23是從匣盒框架21的下表面的梁21a朝上方突出地設置,且在其前端支撐工件W的下表面的棒狀體。工件支撐部23的配置或根數並無特別限定,但在本實施方式中,在各梁21a等間隔地各設有四根。即,工件支撐部23在匣盒框架21的下表面,呈格柵狀地設有4×4根。而且,為了避免劃傷工件W的下表面,工件支撐部23的前端較佳設為例如半球狀。The workpiece support part 23 supports the workpiece W. The workpiece support portion 23 is a rod-shaped body provided to protrude upward from the beam 21 a on the lower surface of the cassette frame 21 and supports the lower surface of the workpiece W at its front end. There is no particular limitation on the arrangement or the number of the workpiece support portions 23 . However, in this embodiment, four beams 21 a are provided at equal intervals. That is, 4×4 workpiece supporting portions 23 are provided in a grid shape on the lower surface of the cassette frame 21 . Furthermore, in order to avoid scratching the lower surface of the workpiece W, the front end of the workpiece support portion 23 is preferably formed into a hemispherical shape, for example.

匣盒支撐部24是從匣盒20的側面朝側方突出,且支撐於後述的支撐部30的突出部。匣盒支撐部24的前後方向的長度例如與匣盒20的前後方向的長度相同。通過匣盒支撐部24支撐於後述的支撐部30,從而收容於腔室10內的匣盒20被支撐於腔室10內。The cassette support part 24 is a protruding part that protrudes laterally from the side surface of the cassette 20 and is supported by a support part 30 to be described later. The length of the cassette support portion 24 in the front-rear direction is, for example, the same as the length of the cassette 20 in the front-rear direction. The cassette support part 24 is supported by the support part 30 described later, so that the cassette 20 accommodated in the chamber 10 is supported in the chamber 10 .

(支撐部) 如圖1以及圖3所示,支撐部30支撐被收容於腔室10內的工件W。本實施方式的支撐部30經由前述的匣盒20來支撐工件W。支撐部30包括:框架31,豎立設置在腔室10的內部;以及支承部32,設在框架31的內部,支撐匣盒20。框架31例如是使用細長的構件而構成的骨架結構。框架31為長方體的框結構,在側面設有板狀的內壁。 (support part) As shown in FIGS. 1 and 3 , the support portion 30 supports the workpiece W accommodated in the chamber 10 . The support part 30 of this embodiment supports the workpiece W via the cassette 20 mentioned above. The support part 30 includes a frame 31 that is erected inside the chamber 10 and a support part 32 that is provided inside the frame 31 and supports the cassette 20 . The frame 31 is, for example, a skeleton structure composed of elongated members. The frame 31 has a rectangular parallelepiped frame structure and is provided with a plate-shaped inner wall on the side.

支承部32是在框架31的內壁以相同的高度而在左右以一對朝內側突出地設置的構件。一對支承部32搭載匣盒20的左右的匣盒支撐部24,由此來支撐一個匣盒20。而且,一對支承部32在框架31的內壁,沿上下方向設有與匣盒20相同的數量。支承部32例如為長方體。支承部32的形狀並不限定於長方體,也可為剖面為L字或U字的形狀。支承部32中,匣盒支撐部24的突出方向與支承部32的突出方向的長度比匣盒支撐部24短。而且,較佳的是,支承部32的前後方向的長度比匣盒支撐部24的前後方向的長度長。而且,支承部32的上下方向的長度是從匣盒支撐部24的下表面直至匣盒20的下表面為止的長度。本實施方式中,如圖1以及圖3所示,與六個匣盒20對應地設有六組的一對支承部32。The support portion 32 is a pair of members provided on the inner wall of the frame 31 at the same height on the left and right so as to protrude inward. The pair of support portions 32 supports one cassette 20 by mounting the left and right cassette support portions 24 of the cassette 20 . Furthermore, the same number of a pair of support parts 32 as that of the cassette 20 is provided on the inner wall of the frame 31 in the up-down direction. The support portion 32 is, for example, a rectangular parallelepiped. The shape of the support portion 32 is not limited to a rectangular parallelepiped, and may have an L-shaped or U-shaped cross section. In the support part 32 , the protrusion direction of the cassette support part 24 and the length of the protrusion direction of the support part 32 are shorter than the cassette support part 24 . Furthermore, it is preferable that the length of the support portion 32 in the front-rear direction is longer than the length of the cassette support portion 24 in the front-rear direction. Furthermore, the length of the support portion 32 in the up-down direction is the length from the lower surface of the cassette support portion 24 to the lower surface of the cassette 20 . In this embodiment, as shown in FIGS. 1 and 3 , six sets of a pair of support parts 32 are provided corresponding to the six cassettes 20 .

(排氣部) 排氣部40是對腔室10的內部進行排氣的結構部。如圖1所示,排氣部40具有第一排氣部41、第二排氣部42以及第三排氣部43。第一排氣部41例如連接於設在腔室10的底面的排氣口12。第一排氣部41經由排氣口12來對腔室10的內部進行排氣。 (exhaust part) The exhaust part 40 is a structural part that exhausts the inside of the chamber 10 . As shown in FIG. 1 , the exhaust part 40 includes a first exhaust part 41 , a second exhaust part 42 , and a third exhaust part 43 . The first exhaust part 41 is connected to the exhaust port 12 provided on the bottom surface of the chamber 10 , for example. The first exhaust part 41 exhausts the inside of the chamber 10 through the exhaust port 12 .

第一排氣部41例如具有配管41a、排氣泵41b以及壓力調整部41c。配管41a是連接於排氣口12的氣體流路。排氣泵41b是從大氣壓開始進行粗抽排氣直至第一規定壓力為止的泵。排氣泵41b的排氣量比後述的排氣泵42b多。作為排氣泵41b,例如可使用乾式真空泵。The first exhaust part 41 includes, for example, a pipe 41a, an exhaust pump 41b, and a pressure adjustment part 41c. The pipe 41 a is a gas flow path connected to the exhaust port 12 . The exhaust pump 41b is a pump that performs rough exhaust from atmospheric pressure to a first predetermined pressure. The exhaust volume of the exhaust pump 41b is larger than that of the exhaust pump 42b described later. As the exhaust pump 41b, for example, a dry vacuum pump can be used.

壓力調整部41c被設在排氣口12與排氣泵41b之間。壓力調整部41c基於對腔室10的內壓進行檢測的未圖示的真空計等的輸出來進行控制,以使腔室10的內壓成為第一規定壓力。作為壓力調整部41c,例如可使用自動壓力控制器(Auto Pressure Controller,APC)。The pressure adjustment part 41c is provided between the exhaust port 12 and the exhaust pump 41b. The pressure regulator 41 c controls the internal pressure of the chamber 10 to the first predetermined pressure based on the output of a vacuum gauge (not shown) or the like that detects the internal pressure of the chamber 10 . As the pressure adjustment part 41c, for example, an automatic pressure controller (Auto Pressure Controller, APC) can be used.

第二排氣部42例如連接於設在腔室10的底面的排氣口13。第二排氣部42經由排氣口13對腔室10的內部進行排氣。第二排氣部42例如具有配管42a、排氣泵42b以及壓力調整部42c。配管42a是連接於排氣口13的氣體流路。排氣泵42b在借助排氣泵41b的粗抽排氣之後,進行排氣直至更低的第二規定壓力為止。排氣泵42b例如具有可排氣至高真空的分子流區域為止的排氣能力。作為排氣泵42b,例如可使用渦輪分子泵(Turbo Molecular Pump,TMP)。The second exhaust part 42 is connected to the exhaust port 13 provided on the bottom surface of the chamber 10 , for example. The second exhaust part 42 exhausts the inside of the chamber 10 through the exhaust port 13 . The second exhaust part 42 includes, for example, a pipe 42a, an exhaust pump 42b, and a pressure adjustment part 42c. The pipe 42 a is a gas flow path connected to the exhaust port 13 . After the exhaust pump 41b performs rough exhaust, the exhaust pump 42b exhausts the air until it reaches a lower second predetermined pressure. The exhaust pump 42b has an exhaust capability capable of exhausting air to a high-vacuum molecular flow region, for example. As the exhaust pump 42b, for example, a turbo molecular pump (Turbo Molecular Pump, TMP) can be used.

壓力調整部42c被設在排氣口13與排氣泵42b之間。壓力調整部42c基於對腔室10的內壓進行檢測的未圖示的真空計等的輸出來進行控制,以使腔室10的內壓成為第二規定壓力。作為壓力調整部42c,例如可使用APC。The pressure adjustment part 42c is provided between the exhaust port 13 and the exhaust pump 42b. The pressure regulator 42 c controls the internal pressure of the chamber 10 to the second predetermined pressure based on the output of a vacuum gauge (not shown) or the like that detects the internal pressure of the chamber 10 . As the pressure regulator 42c, for example, APC can be used.

第三排氣部43例如連接於設在腔室10的頂板面的排氣口14與工廠的排氣系統之間。第三排氣部43例如具有配管43a以及閥43b。配管43a是連接於排氣口14的氣體流路。閥43b被設在排氣口14與工廠的排氣系統之間。The third exhaust part 43 is connected, for example, between the exhaust port 14 provided on the ceiling surface of the chamber 10 and the exhaust system of the factory. The third exhaust part 43 has, for example, a pipe 43a and a valve 43b. The pipe 43a is a gas flow path connected to the exhaust port 14. The valve 43b is provided between the exhaust port 14 and the exhaust system of the factory.

通過從供氣部60對腔室10內供給冷卻氣體,從而腔室10內受到冷卻,但此時一旦腔室10內成為大氣壓以上,則當將閥43b設為開狀態時,便以被所供給的冷卻氣體擠出的方式從排氣口14對腔室10內進行強制排氣。When the cooling gas is supplied from the air supply part 60 into the chamber 10, the inside of the chamber 10 is cooled. However, once the pressure in the chamber 10 becomes equal to or higher than the atmospheric pressure at this time, when the valve 43b is opened, the pressure inside the chamber 10 will be cooled. The supplied cooling gas is extruded from the exhaust port 14 to forcefully exhaust the inside of the chamber 10 .

(加熱部) 加熱部50進行第一加熱與第二加熱。第一加熱是在工件W被支撐於支撐部30的狀態下對工件W進行加熱的處理。即,在工件W被搬入至腔室10內且被支撐於支撐部30的狀態下,通過第一加熱來對工件W進行加熱,由此來進行溶液的乾燥處理。另外,本實施方式中,乾燥處理也包含溶液中的聚醯胺酸經脫水而產生醯亞胺化的情況。 (heating section) The heating unit 50 performs first heating and second heating. The first heating is a process of heating the workpiece W while the workpiece W is supported by the support portion 30 . That is, in a state where the workpiece W is carried into the chamber 10 and supported by the support portion 30 , the workpiece W is heated by the first heating, thereby performing the drying process of the solution. In addition, in this embodiment, the drying process also includes the case where the polyamide acid in the solution is dehydrated and imidized.

第二加熱是在工件W未被支撐於支撐部30的狀態下,以比第一加熱快的升溫速度對腔室10內進行加熱的處理。通過以比第一加熱快的升溫速度對腔室10內進行加熱,從而腔室10內的構件產生與第一加熱時不同的溫度變化。通過與第一加熱時不同的溫度變化,將殘留於腔室10內的昇華物排出至腔室10外。而且,通過與第一加熱時不同的溫度變化,腔室10內的構件彼此熱膨脹而摩擦,從而產生顆粒。通過使腔室10內的構件彼此摩擦而產生顆粒,從而抑制在第一加熱時因腔室10內的構件彼此摩擦而產生的顆粒的發生。即,通過在從腔室10內搬出了工件W的狀態下進行第二加熱,比第一加熱高速地使溫度上升而使腔室10內受到加熱,由此來抑制昇華物或顆粒向工件W的附著。第二加熱與用於工件W的乾燥的加熱不同,是在未將工件W放入腔室10內的空的狀態進行的加熱,因此也被稱作空加熱。另外,因腔室10內的零件的熱膨脹而產生的顆粒在後述的第二加熱後的冷卻中,通過第三排氣部43而排出至腔室10的外部。The second heating is a process of heating the inside of the chamber 10 at a faster temperature rise rate than the first heating in a state where the workpiece W is not supported by the support portion 30 . By heating the inside of the chamber 10 at a faster temperature rise rate than the first heating, the components in the chamber 10 undergo temperature changes that are different from those during the first heating. The sublimate remaining in the chamber 10 is discharged to the outside of the chamber 10 through a temperature change different from that during the first heating. Furthermore, due to a different temperature change from that during the first heating, the members in the chamber 10 thermally expand and rub against each other, thereby generating particles. By causing the members in the chamber 10 to rub each other to generate particles, the generation of particles caused by the friction of the members in the chamber 10 during the first heating is suppressed. That is, by performing the second heating with the workpiece W unloaded from the chamber 10 , the temperature is raised faster than the first heating and the inside of the chamber 10 is heated, thereby suppressing the transfer of sublimates or particles to the workpiece W. of attachment. The second heating is different from the heating for drying the workpiece W in that it is heated in an empty state without placing the workpiece W in the chamber 10 . Therefore, it is also called empty heating. In addition, particles generated due to thermal expansion of the components in the chamber 10 are discharged to the outside of the chamber 10 through the third exhaust part 43 in the cooling after the second heating described below.

如圖1至圖3所示,加熱部50被設在腔室10的內部的匣盒20的上下。加熱部50對被支撐於匣盒20內部的工件W的上下的面進行加熱。設在上側的匣盒20與下側的匣盒20之間的加熱部50對上側的匣盒20中的工件W的下表面進行加熱,並且對下側的匣盒20中的工件W的上表面進行加熱。As shown in FIGS. 1 to 3 , the heating unit 50 is provided above and below the cassette 20 inside the chamber 10 . The heating unit 50 heats the upper and lower surfaces of the workpiece W supported inside the cassette 20 . The heating unit 50 provided between the upper cassette 20 and the lower cassette 20 heats the lower surface of the workpiece W in the upper cassette 20 and heats the upper surface of the workpiece W in the lower cassette 20 . The surface is heated.

加熱部50具有至少一個加熱器51。本實施方式的加熱部50具有多個加熱器51。加熱器51例如可使用護套加熱器、遠紅外線加熱器、遠紅外線燈、陶瓷加熱器、筒形加熱器等。本實施方式的加熱器51為沿左右方向延伸的棒狀。而且,多根加熱器51沿前後方向排列,以使工件W的整面均等地受到加熱。The heating unit 50 has at least one heater 51 . The heating unit 50 of this embodiment has a plurality of heaters 51 . As the heater 51, for example, a sheath heater, a far-infrared heater, a far-infrared lamp, a ceramic heater, a cylindrical heater, etc. can be used. The heater 51 of this embodiment has a rod shape extending in the left-right direction. Furthermore, the plurality of heaters 51 are arranged in the front-rear direction so that the entire surface of the workpiece W is heated equally.

(供氣部) 如圖2至圖4所示,供氣部60具有配管61、配管62以及噴嘴63、噴嘴64。另外,圖2中,配管62、噴嘴64省略了圖示,圖3中,配管61、噴嘴63省略了圖示。配管61是在各匣盒20的裡側(與設有開口部20a的正面為相反側的面,為圖2、圖3中的紙面左側)沿著左右方向而設。配管62是在腔室10內的各匣盒20的後方沿著左右方向而配置。由此,配管61、配管62是在腔室10內的各匣盒20的後方以鄰接的狀態而配置。而且,配管61、配管62沿上下方向多段地設置。另外,配管61、配管62在匣盒20從腔室10被搬出時一起被搬出。即,配管61、配管62被設於匣盒20。 (Air supply department) As shown in FIGS. 2 to 4 , the air supply unit 60 includes pipes 61 , 62 , and nozzles 63 and 64 . In addition, in FIG. 2 , the piping 62 and the nozzle 64 are omitted from the illustration, and in FIG. 3 , the piping 61 and the nozzle 63 are omitted from the illustration. The piping 61 is provided along the left-right direction on the back side of each cassette 20 (the surface opposite to the front surface where the opening 20 a is provided, the left side of the paper in FIGS. 2 and 3 ). The piping 62 is arranged in the left-right direction behind each cassette 20 in the chamber 10 . Therefore, the pipes 61 and 62 are arranged in an adjacent state behind each cassette 20 in the chamber 10 . Furthermore, the piping 61 and the piping 62 are provided in multiple stages in the up-down direction. In addition, the piping 61 and the piping 62 are carried out together when the cassette 20 is carried out from the chamber 10 . That is, the pipe 61 and the pipe 62 are provided in the cassette 20 .

在配管61、配管62中,如圖4所示,從氣體供給裝置65供給氣體。本實施方式的氣體為冷卻氣體。氣體供給裝置65具有設在腔室10的外側的氣體源65a、氣體控制部65b。氣體源65a例如可設為高壓氣瓶、工廠的氣體供給管等。氣體控制部65b被設在配管61、配管62與氣體源65a之間,控制冷卻氣體對配管61、配管62的供給、停止、流量等。As shown in FIG. 4 , gas is supplied to the pipes 61 and 62 from the gas supply device 65 . The gas in this embodiment is cooling gas. The gas supply device 65 includes a gas source 65a and a gas control unit 65b provided outside the chamber 10. The gas source 65a can be, for example, a high-pressure gas bottle, a gas supply pipe in a factory, or the like. The gas control unit 65b is provided between the piping 61 and the piping 62 and the gas source 65a, and controls the supply, stop, flow rate, etc. of the cooling gas to the piping 61 and the piping 62.

冷卻氣體例如使用氮氣、稀有氣體(氬氣或氦氣等)等難以與受到加熱的工件W發生反應的氣體。冷卻氣體的溫度並無特別限定,例如設為常溫以下。As the cooling gas, a gas that is difficult to react with the heated workpiece W, such as nitrogen or a rare gas (argon, helium, etc.), is used. The temperature of the cooling gas is not particularly limited, but may be, for example, normal temperature or lower.

氣體供給裝置65經由未圖示的接頭等的連接部而拆裝自如地連接於設在匣盒20的配管61。即,配管61在將匣盒20插入至腔室10內的情況下連接於氣體供給裝置65,在從腔室10取出匣盒20的情況下解除與氣體供給裝置65的連接。而且,氣體供給裝置65連接於設在匣盒20的配管62。The gas supply device 65 is detachably connected to the pipe 61 provided in the cassette 20 via a connecting portion such as a joint (not shown). That is, the piping 61 is connected to the gas supply device 65 when the cassette 20 is inserted into the chamber 10 , and is disconnected from the gas supply device 65 when the cassette 20 is taken out of the chamber 10 . Furthermore, the gas supply device 65 is connected to the pipe 62 provided in the cassette 20 .

噴嘴63相當於第一噴嘴,是設在配管61的側面的冷卻氣體的噴出部。噴嘴63例如朝向工件W的下表面與匣盒20的下表面之間噴出冷卻氣體。由此,從噴嘴63放出的冷卻氣體以順著工件W的下表面的方式流動,而對匣盒20、工件W以及腔室10的內部進行冷卻(參照圖2的虛線箭頭)。而且,噴嘴63在第二加熱後的冷卻中,向對工件W進行處理的區域噴出冷卻氣體。工件W在被均熱板22包圍的區域內受到處理。即,噴嘴63能夠對均熱板22與支撐均熱板22的構件所接觸的部分噴出冷卻氣體。The nozzle 63 corresponds to the first nozzle and is a cooling gas ejection portion provided on the side surface of the pipe 61 . The nozzle 63 sprays the cooling gas between the lower surface of the workpiece W and the lower surface of the cassette 20 , for example. Thereby, the cooling gas discharged from the nozzle 63 flows along the lower surface of the workpiece W, thereby cooling the cassette 20 , the workpiece W, and the inside of the chamber 10 (see the dotted arrow in FIG. 2 ). Furthermore, the nozzle 63 sprays the cooling gas to the area where the workpiece W is processed during the cooling after the second heating. The workpiece W is processed in the area surrounded by the vapor chamber 22 . That is, the nozzle 63 can spray the cooling gas to the portion where the vapor chamber 22 and the member supporting the vapor chamber 22 come into contact.

噴嘴64相當於第二噴嘴,是設在配管62的側面的冷卻氣體的噴出部。噴嘴64朝向腔室10內的構件的接觸部分,即,朝向引起因熱產生的膨脹、收縮而容易發生構件彼此的摩擦的場所噴出冷卻氣體。所謂容易發生摩擦的場所,例如可設為均熱板22與支撐均熱板22的構件所接觸的部分。本實施方式中,為了避免附圖的繁瑣,圖示了朝匣盒支撐部24與支撐部30的接觸部分噴出冷卻氣體的噴嘴64。匣盒支撐部24與支撐部30的接觸部分也是易因摩擦產生顆粒的部位。The nozzle 64 corresponds to the second nozzle and is a cooling gas ejection portion provided on the side surface of the pipe 62 . The nozzle 64 injects the cooling gas toward the contact portion of the components in the chamber 10 , that is, toward a location where expansion and contraction due to heat are caused and friction between the components is likely to occur. The location where friction is likely to occur may be, for example, a portion where the vapor chamber 22 and a member supporting the vapor chamber 22 come into contact. In this embodiment, in order to avoid the complexity of the drawings, the nozzle 64 that sprays the cooling gas toward the contact portion of the cartridge support portion 24 and the support portion 30 is illustrated. The contact portion between the cassette support portion 24 and the support portion 30 is also a location where particles are easily generated due to friction.

而且,除了所述以外,噴嘴64還以噴出冷卻氣體的方向朝向腔室10中的設有排氣口14的一側的方式而設。進而,噴嘴64朝向對工件W進行處理的區域的外側噴出冷卻氣體。本實施方式中,排氣口14位於腔室10的頂板部,因此噴嘴64朝向斜上。而且,噴嘴64朝向收容工件W的區域之外。另外,所謂朝向設有排氣口14的一側,並不限定於朝向排氣口14的情況,也包含相對於設有排氣口14的面而傾斜地朝向的情況。In addition, in addition to the above, the nozzle 64 is provided so that the direction in which the cooling gas is ejected is directed toward the side of the chamber 10 on which the exhaust port 14 is provided. Furthermore, the nozzle 64 sprays the cooling gas toward the outside of the area where the workpiece W is processed. In this embodiment, since the exhaust port 14 is located on the ceiling of the chamber 10, the nozzle 64 faces obliquely upward. Furthermore, the nozzle 64 faces outside the area where the workpiece W is accommodated. In addition, the term "facing toward the side where the exhaust port 14 is provided" is not limited to the case of facing the exhaust port 14 , but also includes the case of facing obliquely with respect to the surface on which the exhaust port 14 is provided.

由此,從噴嘴64放出的冷卻氣體在匣盒20與支撐部30的接觸位置,能夠將兩構件發生熱膨脹以及收縮而因摩擦產生的顆粒吹起,而使其與朝向排氣口14的排氣一同排出(參照圖3的虛線箭頭)。而且,來自噴嘴64的冷卻氣體在收容有工件W的情況下,也朝向工件W的外側吹出,因此抑制顆粒附著於工件W。As a result, the cooling gas discharged from the nozzle 64 can blow up the particles generated due to friction due to thermal expansion and contraction of the two components at the contact position between the cartridge 20 and the support part 30 , and mix them with the exhaust gas toward the exhaust port 14 . The air is discharged together (refer to the dotted arrow in Figure 3). Furthermore, since the cooling gas from the nozzle 64 is blown toward the outside of the workpiece W even when the workpiece W is accommodated, adhesion of particles to the workpiece W is suppressed.

(控制裝置) 控制裝置70是對熱處理裝置1的各部進行控制的計算機。控制裝置70具有執行程序的處理器、存儲程序或動作條件等各種信息的存儲器、以及驅動各元件的驅動電路。另外,在控制裝置70,連接有輸入信息的輸入裝置、顯示信息的顯示裝置。 (control device) The control device 70 is a computer that controls each component of the heat treatment device 1 . The control device 70 has a processor that executes a program, a memory that stores various information such as programs and operating conditions, and a drive circuit that drives each element. In addition, the control device 70 is connected to an input device for inputting information and a display device for displaying information.

以下例示的第一規定壓力以及第二規定壓力、第一規定溫度至第三規定溫度、規定升溫速度、第一規定時間至第四規定時間、第一規定次數以及第二規定次數、規定時機、規定基準時等是通過輸入裝置而預先將所期望的值輸入至控制裝置70。所輸入的所期望的值被存儲至存儲器。輸入裝置、輸出裝置包含與外部裝置之間收發各種信號的接口。例如,輸入裝置包含從上游裝置接收通知工件W到來的信號的接收部,輸出裝置包含向上游裝置發送通知可接納工件W的信號的發送部。The following examples include the first prescribed pressure and the second prescribed pressure, the first prescribed temperature to the third prescribed temperature, the prescribed temperature rising rate, the first prescribed time to the fourth prescribed time, the first prescribed number of times and the second prescribed number of times, and the prescribed timing. The desired value is input in advance to the control device 70 through the input device for specifying the reference time and the like. The entered desired value is stored in memory. Input devices and output devices include interfaces for sending and receiving various signals to and from external devices. For example, the input device includes a receiving unit that receives a signal notifying the arrival of the workpiece W from an upstream device, and the output device includes a transmitting unit that sends a signal notifying that the workpiece W can be accommodated to the upstream device.

本實施方式的控制裝置70具有開閉控制部71、排氣控制部72、第一熱處理部73、第二熱處理部74以及中斷處理部75。開閉控制部71控制開閉門11的開閉機構。即,開閉控制部71進行使開閉門11移動至開位置以及閉位置的控制、或者切換密閉狀態及開放狀態的控制。The control device 70 of this embodiment includes an opening and closing control unit 71 , an exhaust control unit 72 , a first heat treatment unit 73 , a second heat treatment unit 74 , and an interruption processing unit 75 . The opening and closing control unit 71 controls the opening and closing mechanism of the opening and closing door 11 . That is, the opening and closing control unit 71 performs control to move the opening and closing door 11 to the open position and the closed position, or to switch the closed state and the open state.

開閉控制部71控制開閉機構將開閉門11設為開放狀態而使其移動至開位置,向腔室10內搬入工件W之後,使開閉門11移動至閉位置而設為密閉狀態。在搬出工件W時,在將腔室10內設為大氣壓後,控制開閉機構將開閉門11設為開放狀態而使其移動至開位置,從腔室10搬出工件W後,使開閉門11移動至閉位置而設為密閉狀態。The opening and closing control unit 71 controls the opening and closing mechanism to open the opening and closing door 11 and move it to the open position. After loading the workpiece W into the chamber 10, the opening and closing door 11 moves to the closed position and sets it in a sealed state. When unloading the workpiece W, after setting the inside of the chamber 10 to atmospheric pressure, the opening and closing mechanism is controlled to open the opening and closing door 11 and move it to the open position. After unloading the workpiece W from the chamber 10, the opening and closing door 11 is moved. to the closed position and set to a sealed state.

排氣控制部72通過控制排氣部40的壓力調整部41c、壓力調整部42c、閥43b等,從而控制腔室10內的壓力。第一熱處理部73通過控制排氣部40、加熱部50、供氣部60,從而對工件W進行包含第一加熱以及冷卻的第一熱處理。本實施方式中的第一熱處理為乾燥處理。第一熱處理部73所進行的溫度控制是通過基於設在腔室10內的未圖示的溫度計的檢測值來控制對加熱器51供給的電力量而進行。The exhaust control part 72 controls the pressure adjustment part 41c, the pressure adjustment part 42c, the valve 43b, etc. of the exhaust part 40, and controls the pressure in the chamber 10. The first heat treatment unit 73 controls the exhaust unit 40 , the heating unit 50 , and the air supply unit 60 to perform the first heat treatment including first heating and cooling on the workpiece W. The first heat treatment in this embodiment is drying treatment. The temperature control by the first heat treatment unit 73 is performed by controlling the amount of electric power supplied to the heater 51 based on the detection value of a thermometer (not shown) provided in the chamber 10 .

在第一熱處理中,在進行了排氣而減壓的狀態下進行第一加熱以及冷卻。如圖5的圖表的一點鏈線所示,第一加熱是以第一升溫步驟以及第一溫度維持步驟、第二升溫步驟以及第二溫度維持步驟這兩步驟來進行。在第一升溫步驟中,使工件W上升至第一規定溫度為止,在第一溫度維持步驟中一邊維持第一規定溫度,一邊進行第一規定時間的熱處理。第一規定溫度可設為使溶液中所含的水分或溶劑排出的溫度例如100℃~200℃。第一規定時間例如可設為15分鐘~60分鐘。In the first heat treatment, the first heating and cooling are performed in a state where exhaust is performed and the pressure is reduced. As shown by the one-dot chain line in the graph of FIG. 5 , the first heating is performed in two steps: a first temperature increasing step and a first temperature maintaining step, a second temperature increasing step, and a second temperature maintaining step. In the first temperature increasing step, the workpiece W is raised to a first predetermined temperature, and in the first temperature maintaining step, the heat treatment is performed for a first predetermined time while maintaining the first predetermined temperature. The first predetermined temperature can be a temperature at which water or solvent contained in the solution is discharged, for example, 100°C to 200°C. The first predetermined time can be set to 15 minutes to 60 minutes, for example.

在第二升溫步驟中,使工件W從第一升溫步驟的第一規定溫度上升至更高的第二規定溫度為止,在第二溫度維持步驟中一邊維持第二規定溫度,一邊進行第二規定時間的熱處理。第二規定溫度可設為引起醯亞胺化的溫度例如300℃~500℃。第二規定時間例如可設為15分鐘~60分鐘。為了獲得分子鏈的填充度高的有機膜,更佳將500℃維持15分鐘。另外,第一升溫步驟、第二升溫步驟可均將升溫速度設為例如5℃/分鐘。In the second temperature increasing step, the workpiece W is raised from the first predetermined temperature in the first temperature increasing step to a higher second predetermined temperature, and in the second temperature maintaining step, the second predetermined temperature is maintained while maintaining the second predetermined temperature. Time of heat treatment. The second predetermined temperature can be a temperature that causes imidization, for example, 300°C to 500°C. The second predetermined time can be set to 15 minutes to 60 minutes, for example. In order to obtain an organic film with a high filling degree of molecular chains, it is better to maintain 500°C for 15 minutes. In addition, both the first temperature rising step and the second temperature rising step may set the temperature rising rate to, for example, 5° C./min.

進而,冷卻是通過第一熱處理部73控制供氣部60,由此從氣體供給裝置65供給冷卻氣體並使冷卻氣體從噴嘴63、噴嘴64噴出,從而使腔室10內降溫至第三規定溫度為止的降溫步驟,來將腔室10設為待機狀態。所述第三規定溫度例如可設為50℃~140℃。Furthermore, the cooling is performed by controlling the gas supply unit 60 through the first heat treatment unit 73, thereby supplying cooling gas from the gas supply device 65 and ejecting the cooling gas from the nozzles 63 and 64, thereby cooling the inside of the chamber 10 to the third predetermined temperature. The cooling steps up to this point set the chamber 10 in a standby state. The third predetermined temperature may be, for example, 50°C to 140°C.

例如,在第一熱處理後,若所搬出的工件W的溫度為常溫,則容易進行工件W的搬出。然而,在熱處理裝置1中,工件W是連續地受到加熱處理。而且,有時繼第一熱處理之後還要進行第二熱處理。因此,若每當搬出工件W時使工件W的溫度成為常溫,則使下個工件W升溫的時間、第二加熱的升溫時間將變長,生產性有可能下降。因此,較佳將使其降溫的第三規定溫度設為如上。For example, after the first heat treatment, if the temperature of the workpiece W to be carried out is normal temperature, the workpiece W can be easily carried out. However, in the heat treatment apparatus 1, the workpiece W is continuously subjected to heat treatment. Furthermore, a second heat treatment may be performed after the first heat treatment. Therefore, if the temperature of the workpiece W is brought to normal temperature each time the workpiece W is unloaded, the time required to raise the temperature of the next workpiece W and the temperature rise time of the second heating will become longer, and productivity may decrease. Therefore, it is preferable to set the third predetermined temperature for cooling as above.

另外,若在降溫至第三規定溫度之前便將開閉門11設為開放狀態,則經由開口10a流入至腔室10內部的氧與塗布於工件W的基板上的膜的成分會發生反應,從而有可能得不到具有所期望的膜質的工件W。因而,第三規定溫度要低於產生此種反應的溫度。In addition, if the opening and closing door 11 is opened before the temperature is lowered to the third predetermined temperature, the oxygen flowing into the inside of the chamber 10 through the opening 10 a will react with the components of the film coated on the substrate of the workpiece W, so that There is a possibility that the workpiece W having the desired film quality cannot be obtained. Therefore, the third stipulated temperature is lower than the temperature at which such reaction occurs.

第二熱處理部74通過控制排氣部40、加熱部50、供氣部60,從而在無工件W的狀態下進行包含排氣、第二加熱以及冷卻的第二熱處理。本實施方式的第二熱處理包含第二加熱即空加熱。第二熱處理部74所進行的第二熱處理是在規定的時機進行。規定的時機例如是從規定的基準時經過了第三規定時間的情況、第一熱處理的次數達到第一規定次數的情況、作業員從輸入裝置輸入了指示的情況等。規定的基準時例如是將通知可接納工件W的信號發送至上游裝置時。The second heat treatment unit 74 controls the exhaust unit 40 , the heating unit 50 , and the air supply unit 60 to perform the second heat treatment including exhaust, second heating, and cooling without the workpiece W. The second heat treatment in this embodiment includes second heating, that is, air heating. The second heat treatment performed by the second heat treatment unit 74 is performed at a predetermined timing. The predetermined timing is, for example, when a third predetermined time has elapsed from a predetermined reference time, when the number of times of the first heat treatment reaches the first predetermined number of times, when an operator inputs an instruction from the input device, and the like. The predetermined reference time is, for example, when a signal notifying that the workpiece W can be accepted is sent to the upstream device.

第二熱處理中,如圖6的圖表的實線所示,以一步驟來進行包含第二加熱的升溫步驟。在升溫步驟中,將腔室10內加熱至與第一加熱相同的第二規定溫度為止。但是,第二加熱中的升溫速度比第一加熱快。例如,在第二加熱中,以10℃/分鐘的速度升溫至300℃~500℃為止。In the second heat treatment, as shown by the solid line in the graph of FIG. 6 , the temperature increasing step including the second heating is performed in one step. In the temperature raising step, the inside of the chamber 10 is heated to the second predetermined temperature that is the same as the first heating. However, the temperature rise rate in the second heating is faster than that in the first heating. For example, in the second heating, the temperature is raised to 300°C to 500°C at a rate of 10°C/min.

而且,第二加熱與第一加熱同樣地,是在通過第一排氣部41、第二排氣部42進行了減壓的狀態下進行。這是因為,若在大氣壓或低真空等存在氧的狀態下使其升溫,則腔室內的物質有可能發生氧化。另外,在第一加熱與第二加熱中,儘管升溫速度不同,但加熱的最高溫度即第二規定溫度以及減壓時的壓力相同。Moreover, the second heating is performed in a state in which the pressure is reduced by the first exhaust part 41 and the second exhaust part 42, similarly to the first heating. This is because if the temperature is raised in a state where oxygen exists, such as atmospheric pressure or low vacuum, the substances in the chamber may be oxidized. In addition, in the first heating and the second heating, although the temperature increase rates are different, the second predetermined temperature, which is the highest temperature of heating, and the pressure during pressure reduction are the same.

另外,第二熱處理並非以工件W的乾燥為目的,而是用於使腔室10內的零件膨脹、收縮的加熱。因此,與第一熱處理不同,一旦到達第二規定溫度,便立即進行使其冷卻的降溫步驟。即,在第二熱處理中,不需要長時間維持最高溫度。通過像這樣高速地進行加熱以及冷卻,能夠使第二熱處理的時間縮短化。In addition, the second heat treatment is not intended to dry the workpiece W, but is used to heat the parts in the chamber 10 to expand and contract. Therefore, unlike the first heat treatment, once the second predetermined temperature is reached, a cooling step of cooling is immediately performed. That is, in the second heat treatment, it is not necessary to maintain the maximum temperature for a long time. By performing heating and cooling at such a high speed, the time of the second heat treatment can be shortened.

在降溫步驟中,氣體供給裝置65供給冷卻氣體,從供氣部60的噴嘴63、噴嘴64噴出冷卻氣體,由此,使腔室10內降溫至第三規定溫度為止。所述第三規定溫度可設為50℃~140℃。在所述降溫步驟中,當通過冷卻氣體的噴出而腔室10內的氣壓達到大氣壓以上時,打開閥43b而從第三排氣部43進行排氣。由此,因熱膨脹以及收縮引起的摩擦產生的顆粒與被噴出至匣盒20和支撐部30的接觸位置的冷卻氣體一同朝向排氣口14排出至腔室10外。為了促進顆粒的運動而易於排出,來自噴嘴63、噴嘴64的冷卻氣體的噴出量(每單位時間的噴出量)被設定得比第一加熱後的冷卻中的冷卻氣體的噴出量多。In the cooling step, the gas supply device 65 supplies cooling gas, and the cooling gas is sprayed from the nozzles 63 and 64 of the gas supply part 60, thereby cooling the inside of the chamber 10 to the third predetermined temperature. The third prescribed temperature may be set to 50°C to 140°C. In the temperature lowering step, when the air pressure in the chamber 10 reaches the atmospheric pressure or higher due to the ejection of the cooling gas, the valve 43 b is opened to exhaust gas from the third exhaust part 43 . Thereby, the particles generated by friction due to thermal expansion and contraction are discharged toward the exhaust port 14 and out of the chamber 10 together with the cooling gas ejected to the contact position between the cassette 20 and the support part 30 . In order to promote the movement of the particles and facilitate their discharge, the ejection amount of the cooling gas from the nozzles 63 and 64 (the ejection amount per unit time) is set to be larger than the ejection amount of the cooling gas during cooling after the first heating.

進而,第二熱處理中,將第二加熱與冷卻的循環進行第二規定次數,由此,反復進行腔室10內的零件的膨脹、收縮而產生顆粒。第二規定次數為兩次以上,例如,如圖6所示,較佳進行三次。第二熱處理後,腔室10處於待機狀態。另外,也可不設為待機狀態,而繼續第二加熱與冷卻的循環,直至收到通知下個工件W到來的信號為止。Furthermore, in the second heat treatment, the second heating and cooling cycle is performed a second predetermined number of times, whereby expansion and contraction of the parts in the chamber 10 are repeated to generate particles. The second predetermined number of times is two or more times. For example, as shown in FIG. 6 , it is preferably performed three times. After the second heat treatment, the chamber 10 is in a standby state. In addition, the second heating and cooling cycle may not be set to the standby state until a signal notifying the arrival of the next workpiece W is received.

中斷處理部75在第二加熱中的升溫步驟中收到通知工件W到來的信號時,使第二加熱中斷。如上所述,工件W通過熱處理裝置1更上游的裝置例如臨時煆燒裝置對溶液進行臨時煆燒而被設為半固化狀態。中斷處理部75在第二加熱中達到最高溫度之前,從此種上游裝置收到通知工件W到來的信號時,停止加熱部50所進行的加熱,並通過來自噴嘴63、噴嘴64的冷卻氣體的噴出冷卻至第三規定溫度為止,由此設為待機狀態。另外,即便在降溫步驟中收到信號,在接納工件W時,也必須進行冷卻直至成為待機狀態為止,因此繼續降溫步驟。When receiving a signal notifying the arrival of the workpiece W in the temperature rising step in the second heating, the interruption processing unit 75 interrupts the second heating. As described above, the workpiece W is brought into a semi-solidified state by temporarily calcining the solution by a device further upstream of the heat treatment device 1, such as a temporary calcining device. When the interruption processing unit 75 receives a signal notifying the arrival of the workpiece W from such an upstream device before reaching the maximum temperature in the second heating, the interruption processing unit 75 stops the heating by the heating unit 50 and ejects the cooling gas from the nozzles 63 and 64 It is cooled to the third predetermined temperature, thereby setting the standby state. In addition, even if a signal is received in the cooling step, when the workpiece W is received, cooling must be performed until the workpiece W reaches the standby state, so the cooling step is continued.

[動作] 除了所述的圖1至圖6以外,還參照圖7的流程圖來說明如上所述的本實施方式的動作流程。首先,匣盒20將開口部20a設為跟前而插入至腔室10內的各支撐部30的位置,並支撐於支承部32。本實施方式中,通過支撐於各支承部32而收容有六個匣盒20。另外,在匣盒20內未支撐有工件W。 [action] In addition to the above-described FIGS. 1 to 6 , the operation flow of the present embodiment as described above will be described with reference to the flowchart of FIG. 7 . First, the cassette 20 is inserted into the position of each support portion 30 in the chamber 10 with the opening 20 a facing forward, and is supported by the support portion 32 . In this embodiment, six cassettes 20 are accommodated by being supported on each support portion 32 . In addition, the workpiece W is not supported in the cassette 20 .

在此狀態下,開閉控制部71控制開閉機構,由此將開閉門11設為開放狀態,使其移動至上方而設為開位置(步驟S01)。繼而,通過未圖示的機械臂,按照從腔室10內的上段的匣盒20往下段的匣盒20的順序搬入工件W(步驟S02)。所搬入的工件W被支撐於設在匣盒20內部的工件支撐部23。In this state, the opening and closing control unit 71 controls the opening and closing mechanism to bring the opening and closing door 11 into the open state and move it upward to the open position (step S01 ). Next, the workpiece W is loaded in by a robot arm (not shown) in order from the upper cassette 20 to the lower cassette 20 in the chamber 10 (step S02 ). The loaded workpiece W is supported by the workpiece support portion 23 provided inside the cassette 20 .

當工件W的搬入作業完成時,開閉控制部71控制開閉機構,由此,使開閉門11朝下方移動而設為閉位置後,使其移動以按壓至開口10a,由此,將腔室10的內部設為密閉狀態(步驟S03)。When the loading operation of the workpiece W is completed, the opening and closing control unit 71 controls the opening and closing mechanism, thereby moving the opening and closing door 11 downward to the closed position, and then moves it to press the opening 10 a, thereby closing the chamber 10 The inside of is set to a sealed state (step S03).

進而,通過排氣控制部72來控制排氣部40,對腔室10的內部進行減壓(步驟S04)。所述減壓首先是在關閉了第三排氣部43的閥43b的狀態下,通過第一排氣部41的排氣泵41b從大氣壓開始進行粗抽排氣,直至第一規定壓力為止。接下來,通過第二排氣部42的排氣泵42b進行排氣,直至比第一規定壓力更低的第二規定壓力為止。由此減壓至例如1×10 -2Pa~100 Pa左右的壓力為止。 Furthermore, the exhaust control unit 72 controls the exhaust unit 40 to depressurize the inside of the chamber 10 (step S04 ). The pressure reduction is first performed by using the exhaust pump 41b of the first exhaust part 41 to perform rough exhaust from atmospheric pressure to the first predetermined pressure with the valve 43b of the third exhaust part 43 closed. Next, exhaust is performed by the exhaust pump 42b of the second exhaust unit 42 up to a second predetermined pressure lower than the first predetermined pressure. Thereby, the pressure is reduced to a pressure of about 1×10 -2 Pa to 100 Pa, for example.

當腔室10的內部空間被減壓至第二規定壓力為止時,第一熱處理部73對加熱部50的加熱器51施加電力,以開始第一熱處理(步驟S05)。在所述第一熱處理中,如圖5所示,首先進行使工件W升溫至第一規定溫度為止的第一升溫步驟(步驟S06)。接下來,進行將通過升溫而達到的第一規定溫度維持第一規定時間的第一溫度維持步驟(步驟S07)。由此,工件W的溶液中所含的水分或氣體等被排出。When the internal space of the chamber 10 is depressurized to the second predetermined pressure, the first heat treatment unit 73 applies power to the heater 51 of the heating unit 50 to start the first heat treatment (step S05 ). In the first heat treatment, as shown in FIG. 5 , a first temperature increasing step (step S06 ) is performed to increase the temperature of the workpiece W to a first predetermined temperature. Next, a first temperature maintenance step of maintaining the first predetermined temperature reached by the temperature increase for a first predetermined time is performed (step S07 ). Thereby, moisture, gas, etc. contained in the solution of the workpiece W are discharged.

繼而,第一熱處理部73控制對加熱部50的加熱器51的施加電力,由此來進行使其升溫至比第一升溫步驟中的第一規定溫度高的第二規定溫度為止的第二升溫步驟(步驟S08)。接下來,進行將通過升溫而達到的第二規定溫度維持第二規定時間的第二溫度維持步驟(步驟S09)。利用此加熱,在工件W的基板的表面通過醯亞胺化而形成有機膜。Next, the first heat treatment unit 73 controls the application of electric power to the heater 51 of the heating unit 50 to perform a second temperature increase up to a second predetermined temperature higher than the first predetermined temperature in the first temperature increase step. step (step S08). Next, a second temperature maintenance step of maintaining the second predetermined temperature reached by the temperature increase for a second predetermined time is performed (step S09 ). This heating forms an organic film on the surface of the substrate of the workpiece W through imidization.

當第二規定時間經過時,第一熱處理部73使加熱部50的加熱器51停止,進行使形成了有機膜的工件W的溫度冷卻至第三規定溫度為止的降溫步驟(步驟S10)。即,停止排氣部40所進行的排氣,使供氣部60供給來自氣體供給裝置65的冷卻氣體。由此,腔室10的內部逐漸接近大氣壓,並且工件W受到冷卻。When the second predetermined time has elapsed, the first heat treatment unit 73 stops the heater 51 of the heating unit 50 and performs a cooling step to cool the workpiece W on which the organic film is formed to a third predetermined temperature (step S10 ). That is, exhaust by the exhaust unit 40 is stopped, and the cooling gas from the gas supply device 65 is supplied by the gas supply unit 60 . Thereby, the inside of the chamber 10 gradually approaches atmospheric pressure, and the workpiece W is cooled.

當腔室10的內部成為大氣壓時,通過排氣控制部72來打開閥43b,經由第三排氣部43將冷卻氣體排出至腔室10的外部。當腔室10內冷卻至可搬出工件W的第三規定溫度為止時,停止供氣部60對冷卻氣體的供給,成為待機狀態(步驟S11)。When the inside of the chamber 10 reaches atmospheric pressure, the exhaust control unit 72 opens the valve 43 b and discharges the cooling gas to the outside of the chamber 10 through the third exhaust unit 43 . When the inside of the chamber 10 is cooled to the third predetermined temperature at which the workpiece W can be unloaded, the supply of the cooling gas by the air supply unit 60 is stopped and the system enters a standby state (step S11 ).

接下來,開閉控制部71控制開閉門11的開閉機構,由此將腔室10的內部設為開放狀態,進而使開閉門11移動至開位置而打開開口10a(步驟S12)。接下來,通過未圖示的機械臂,從下段的匣盒20開始依次搬出工件W(步驟S13)。Next, the opening and closing control unit 71 controls the opening and closing mechanism of the opening and closing door 11 to bring the inside of the chamber 10 into an open state, and further moves the opening and closing door 11 to the open position to open the opening 10 a (step S12 ). Next, the workpiece W is sequentially carried out from the lower cassette 20 by a robot arm (not shown) (step S13).

當從腔室10內搬出所有的工件W時,開閉控制部71通過開閉門11的開閉機構,由此使開閉門11移動至閉位置,並使其移動以按壓至開口10a而設為密閉狀態(步驟S14)。接下來,控制裝置70將通知可接納工件W的信號發送至上游裝置(步驟S15)。另外,在輸入有熱處理裝置1的停止指示時(步驟S16的是),結束處理。When all the workpieces W are carried out from the chamber 10 , the opening and closing control unit 71 moves the opening and closing door 11 to the closed position through the opening and closing mechanism of the opening and closing door 11 , and moves the opening and closing door 11 to press the opening 10 a to establish a sealed state. (Step S14). Next, the control device 70 sends a signal notifying that the workpiece W can be accommodated to the upstream device (step S15 ). In addition, when the stop instruction of the heat treatment apparatus 1 is input (YES in step S16), the process is terminated.

第二熱處理部74在熱處理裝置1繼續運轉的情況下(步驟S16的否),從上游裝置接收通知下個工件W到來的信號(步驟S17的是),當下個工件W到來時,進行所述步驟S01以後的處理。另一方面,在從輸出通知可接納工件W的信號開始,即從規定的基準時開始,未收到通知下個工件W到來的信號(步驟S17的否),而經過了第三規定時間的情況下(步驟S18的是),開始第二熱處理(步驟S19)。即,在從第一熱處理結束起規定時間(第三規定時間)工件W未來到的情況下,認為無法進行接下來的第一熱處理,因此利用此時間來進行空加熱。例如在上游的裝置中引起某些問題而工件W長時間未來到熱處理裝置1等的情況下,可進行空加熱。When the heat treatment device 1 continues to operate (No in step S16), the second heat treatment unit 74 receives a signal notifying the arrival of the next workpiece W from the upstream device (Yes in step S17), and when the next workpiece W arrives, performs the above-mentioned Processing after step S01. On the other hand, after the signal notifying that the workpiece W can be accepted is output, that is, from the predetermined reference time, the signal notifying the arrival of the next workpiece W is not received (NO in step S17), and the third predetermined time has elapsed. In this case (YES in step S18), the second heat treatment is started (step S19). That is, if the workpiece W does not arrive within a predetermined time (third predetermined time) from the end of the first heat treatment, it is considered that the next first heat treatment cannot be performed, so this time is used to perform idle heating. For example, if some problem occurs in the upstream device and the workpiece W does not arrive at the heat treatment device 1 for a long time, empty heating can be performed.

首先,第二熱處理部74通過排氣控制部72來控制排氣部40,對腔室10的內部進行減壓(步驟S20)。所述減壓與第一熱處理中的減壓同樣地,關閉閥43b,通過排氣泵41b進行粗抽排氣後,通過排氣泵42b進行排氣,直至第二規定壓力為止。由此減壓至例如1×10 -2Pa~100 Pa左右的壓力為止。 First, the second heat treatment unit 74 controls the exhaust unit 40 through the exhaust control unit 72 to depressurize the inside of the chamber 10 (step S20 ). The pressure reduction is similar to the pressure reduction in the first heat treatment. The valve 43b is closed, rough exhaust is performed by the exhaust pump 41b, and then exhaust is performed by the exhaust pump 42b until the second predetermined pressure is reached. Thereby, the pressure is reduced to a pressure of about 1×10 -2 Pa to 100 Pa, for example.

當腔室10的內部空間被減壓至第二規定壓力為止時,對加熱部50的加熱器51施加電力,進行使腔室10內上升至第二規定溫度為止的升溫步驟(步驟S21)。由此,匣盒20以及支撐部30等的腔室10內的構件產生熱膨脹。When the internal space of the chamber 10 is depressurized to the second predetermined pressure, electric power is applied to the heater 51 of the heating unit 50 to perform a temperature raising step to raise the inside of the chamber 10 to the second predetermined temperature (step S21 ). As a result, components in the chamber 10 such as the cassette 20 and the support portion 30 undergo thermal expansion.

此種第二熱處理中,在升溫中未達到第二規定溫度的情況(步驟S22的否)且未從上游裝置收到通知下個工件W到來的信號的情況下(步驟S23的否),繼續升溫。第二熱處理部74在達到第二規定溫度時(步驟S22的是),進行降溫步驟(步驟S24)。In this second heat treatment, if the second predetermined temperature is not reached during the temperature rise (No in step S22) and if a signal notifying the arrival of the next workpiece W is not received from the upstream device (No in step S23), the process continues. heat up. When the second heat treatment unit 74 reaches the second predetermined temperature (YES in step S22), the second heat treatment unit 74 performs a temperature reduction step (step S24).

即,第二熱處理部74在降溫步驟中停止加熱部50的加熱器51,使氣體供給裝置65供給冷卻氣體,由此,使冷卻氣體從供氣部60的噴嘴63、噴嘴64噴出。一旦腔室10內成為大氣壓,則打開閥43b而進行借助第三排氣部43的排氣。此時也繼續冷卻氣體的供給。由此,腔室10的內部受到冷卻,因此匣盒20以及支撐部30等的腔室10內的構件收縮。來自噴嘴64的冷卻氣體朝向上方噴吹至匣盒20與支撐部30的接觸部分,因此因匣盒20與支撐部30的熱膨脹與收縮而產生的顆粒與朝向排氣口14的排氣一同被排出。That is, in the cooling step, the second heat treatment unit 74 stops the heater 51 of the heating unit 50 and causes the gas supply device 65 to supply the cooling gas, thereby causing the cooling gas to be ejected from the nozzles 63 and 64 of the gas supply unit 60 . Once the inside of the chamber 10 reaches atmospheric pressure, the valve 43b is opened and exhaust is performed through the third exhaust portion 43 . The supply of cooling gas is also continued at this time. As a result, the inside of the chamber 10 is cooled, so that components in the chamber 10 such as the cassette 20 and the support portion 30 shrink. The cooling gas from the nozzle 64 is blown upward to the contact portion of the cartridge 20 and the support part 30 , so the particles generated due to the thermal expansion and contraction of the cartridge 20 and the support part 30 are expelled together with the exhaust gas toward the exhaust port 14 discharge.

尤其,較佳的是,支撐部30的支承部32的突出方向的長度比匣盒支撐部24的突出方向的長度短。此時,從噴嘴64噴出的冷卻氣體噴吹至匣盒支撐部24與支承部32相接觸的部分。因此,能夠進一步排出顆粒。而且,如前所述,支承部32的前後方向的長度比匣盒支撐部24的前後方向的長度長。並且,支承部32的上下方向的長度是從匣盒支撐部24的下表面直至匣盒20的下表面為止的長度。因此,支承部32具有對來自噴嘴64的冷卻氣體進行引導的作用。In particular, it is preferable that the length of the support portion 32 of the support portion 30 in the protruding direction is shorter than the length of the cassette support portion 24 in the protruding direction. At this time, the cooling gas sprayed from the nozzle 64 is sprayed to the portion where the cassette support portion 24 and the support portion 32 are in contact. Therefore, particles can be further discharged. Furthermore, as mentioned above, the length of the support portion 32 in the front-rear direction is longer than the length of the cassette support portion 24 in the front-rear direction. Furthermore, the length of the support portion 32 in the up-down direction is the length from the lower surface of the cassette support portion 24 to the lower surface of the cassette 20 . Therefore, the support portion 32 has a role of guiding the cooling gas from the nozzle 64 .

來自噴嘴64的冷卻氣體沿著支承部32而在前後方向上流動。其結果,冷卻氣體流動至匣盒20的開口部20a附近的匣盒支撐部24與支承部32所接觸的部分為止。即,在前後方向上,冷卻氣體噴吹至匣盒支撐部24與支承部32所接觸的部分。因此,能夠進一步排出顆粒。第二熱處理部74在冷卻至第三規定溫度為止時,停止供氣部60對冷卻氣體的供給。The cooling gas from the nozzle 64 flows in the front-rear direction along the support portion 32 . As a result, the cooling gas flows to the portion where the cartridge support portion 24 and the support portion 32 are in contact near the opening 20 a of the cartridge 20 . That is, the cooling gas is blown to the part where the cassette support part 24 and the support part 32 contact in the front-back direction. Therefore, particles can be further discharged. When the second heat treatment unit 74 is cooled to the third predetermined temperature, the supply of the cooling gas by the air supply unit 60 is stopped.

若所述第二熱處理中的加熱與冷卻的一循環未達到第二規定次數(步驟S25的否),則如上所述在減壓後再次進行升溫步驟與降溫步驟(步驟S20~步驟S24)。若第二熱處理中的加熱與冷卻的次數已達到第二規定次數(步驟S25的是),則腔室10處於待機狀態,當下個工件W到來時,進行所述步驟S01以後的處理。If the cycle of heating and cooling in the second heat treatment does not reach the second predetermined number of times (NO in step S25 ), the temperature increasing step and the temperature decreasing step are performed again after the pressure is reduced (steps S20 to S24 ) as described above. If the number of times of heating and cooling in the second heat treatment has reached the second predetermined number (YES in step S25 ), the chamber 10 is in a standby state, and when the next workpiece W arrives, the processing after step S01 is performed.

另外,在第二加熱中,若在升溫步驟中從上游裝置收到下個工件W到來的信號(步驟S23的是),則中斷處理部75停止加熱部50所進行的加熱,並與所述同樣地進行降溫步驟(步驟S26)。然後,成為處於待機狀態的第三規定溫度,停止供氣部60對冷卻氣體的供給後,進行所述步驟S01以後的處理。In addition, in the second heating, if a signal indicating the arrival of the next workpiece W is received from the upstream device in the temperature rising step (Yes in step S23 ), the interruption processing unit 75 stops the heating by the heating unit 50 and continues the process with the above-mentioned heating unit 50 . The temperature lowering step (step S26) is performed similarly. Then, the temperature reaches the third predetermined temperature in the standby state, and the supply of the cooling gas by the air supply unit 60 is stopped, and then the processing after step S01 is performed.

[效果] (1)本實施方式的熱處理裝置1包括:腔室10,能夠維持比大氣壓減壓的環境;排氣部40,連接於腔室10,對腔室10內進行排氣;支撐部30,支撐被收容在腔室10內的工件W;加熱部50,進行在工件W被支撐於支撐部30的狀態下對工件W進行加熱的第一加熱,且進行在工件W未被支撐於支撐部30的狀態下以比第一加熱快的升溫速度對腔室10內進行加熱的第二加熱;以及供氣部60,在所述第一加熱後以及所述第二加熱後,對腔室內供給氣體,由此來進行冷卻。 [Effect] (1) The heat treatment device 1 of this embodiment includes: a chamber 10 capable of maintaining an environment at a reduced pressure than atmospheric pressure; an exhaust part 40 connected to the chamber 10 to exhaust the inside of the chamber 10; and a support part 30 that supports The heating unit 50 performs first heating for heating the workpiece W accommodated in the chamber 10 while the workpiece W is supported by the support unit 30 , and performs first heating when the workpiece W is not supported by the support unit 30 . A second heating that heats the inside of the chamber 10 at a faster temperature rise rate than the first heating; and a gas supply part 60 that supplies gas into the chamber after the first heating and after the second heating. , thereby cooling.

而且,本實施方式的熱處理裝置1具有對排氣部40、加熱部50、供氣部60進行控制的控制裝置70,控制裝置70具有:第一熱處理部73,使加熱部50以及供氣部60執行進行第一加熱以及冷卻的第一熱處理;以及第二熱處理部74,在進行了第一熱處理的工件W從腔室10排出後,使加熱部50、供氣部60以及排氣部40執行進行第二加熱、冷卻以及排氣的第二熱處理。Furthermore, the heat treatment apparatus 1 of this embodiment includes a control device 70 that controls the exhaust part 40, the heating part 50, and the air supply part 60. The control device 70 has a first heat treatment part 73 that controls the heating part 50 and the air supply part. 60 performs the first heat treatment of performing first heating and cooling; and the second heat treatment part 74 makes the heating part 50 , the air supply part 60 and the exhaust part 40 A second heat treatment of second heating, cooling, and exhaust is performed.

進而,本實施方式的熱處理方法包括:第一熱處理,在工件W被支撐於經減壓的腔室10內的支撐部30的狀態下,加熱部50對工件W進行加熱後,供氣部60供給氣體而進行冷卻;工件排出處理,在第一熱處理後,從腔室10中排出工件W;以及第二熱處理,在工件W未被支撐於支撐部30的狀態下,加熱部50通過比第一熱處理快的升溫速度對腔室10內進行加熱後,供氣部60供給氣體而進行冷卻,排氣部40對腔室10內進行排氣。Furthermore, the heat treatment method of this embodiment includes: a first heat treatment, in which the heating unit 50 heats the workpiece W while the workpiece W is supported by the support portion 30 in the depressurized chamber 10, and then the gas supply unit 60 The gas is supplied for cooling; the workpiece discharge process is to discharge the workpiece W from the chamber 10 after the first heat treatment; and the second heat treatment is to pass the heating part 50 through the heating part 50 in a state where the workpiece W is not supported by the support part 30. After heating the inside of the chamber 10 at a fast temperature rise rate during heat treatment, the air supply part 60 supplies gas for cooling, and the exhaust part 40 exhausts the inside of the chamber 10 .

因此,在未進行對工件W的第一加熱的期間進行第二加熱以及冷卻,能夠使因腔室10內部的構件的膨脹與收縮產生的顆粒或因加熱軟化而變得易排出的昇華物與排氣部40的排氣一同排出至腔室10外,從而維持腔室10內的潔淨度。因而,能夠降低因顆粒附著於工件W的表面造成的品質下降,成品率也提高。尤其,在第二加熱中,升溫速度比第一加熱快,因此易產生因熱膨脹造成的構件彼此的摩擦,從而能夠去除可能產生的顆粒。Therefore, by performing the second heating and cooling while the first heating of the workpiece W is not being performed, particles generated due to expansion and contraction of the components inside the chamber 10 or sublimates that are easily discharged due to heating and softening can be removed from each other. The exhaust gas from the exhaust part 40 is discharged to the outside of the chamber 10 together, thereby maintaining the cleanliness in the chamber 10 . Therefore, quality deterioration caused by particles adhering to the surface of the workpiece W can be reduced, and the yield can also be improved. In particular, in the second heating, the temperature rise rate is faster than that in the first heating, so friction between members due to thermal expansion is likely to occur, so that particles that may be generated can be removed.

而且,昇華物或顆粒是通過排氣被去除,因此能夠降低用於停止熱處理裝置1而進行的清潔的維護的頻率,抑制生產性的下降。進而,能夠降低腔室10內的附著物,因此能夠縮短維護所需的時間,從而能夠提高生產效率。另外,進行第二加熱也達成為直至下個工件W到來為止的腔室10內的溫度維持,因此能量效率也佳。Furthermore, since sublimates and particles are removed by the exhaust gas, the frequency of maintenance for stopping the heat treatment apparatus 1 for cleaning can be reduced, thereby suppressing a decrease in productivity. Furthermore, since deposits in the chamber 10 can be reduced, the time required for maintenance can be shortened, thereby improving production efficiency. In addition, performing the second heating also maintains the temperature in the chamber 10 until the arrival of the next workpiece W, so the energy efficiency is also good.

(2)本實施方式的熱處理裝置1中,加熱部50以及供氣部60多次進行第二加熱以及冷卻。因此,反復進行腔室10內的構件的膨脹與收縮而使顆粒產生並予以去除,因此能夠在隨後的處理中降低腔室10內產生的顆粒。(2) In the heat treatment apparatus 1 of this embodiment, the heating unit 50 and the air supply unit 60 perform the second heating and cooling multiple times. Therefore, the expansion and contraction of the member in the chamber 10 are repeated to generate and remove particles, so that the particles generated in the chamber 10 can be reduced in subsequent processing.

(3)本實施方式的熱處理裝置1中,設有噴嘴63,所述噴嘴63與供氣部60連接,朝向工件W的下表面噴出氣體。因此,能夠對被均熱板22包圍而對工件W進行處理的區域噴吹氣體。其結果,能夠對均熱板22與支撐均熱板22的構件所接觸的部分噴吹氣體,從而能夠將顆粒與排氣一同予以去除。(3) The heat treatment apparatus 1 of the present embodiment is provided with a nozzle 63 connected to the gas supply unit 60 for ejecting gas toward the lower surface of the workpiece W. Therefore, the gas can be blown into the area surrounded by the vapor chamber 22 where the workpiece W is processed. As a result, the gas can be blown to the portion where the vapor chamber 22 and the member supporting the vapor chamber 22 are in contact, and the particles can be removed together with the exhaust gas.

(4)本實施方式的熱處理裝置1中,設有噴嘴64,所述噴嘴64與供氣部60連接,對腔室10內的構件的接觸部分噴吹氣體。因此,能夠對易產生顆粒的部位噴吹氣體並將其與排氣一同予以去除。(4) The heat treatment apparatus 1 of the present embodiment is provided with a nozzle 64 connected to the gas supply unit 60 for blowing gas to the contact portion of the components in the chamber 10 . Therefore, the gas can be blown to the location where particles are likely to be generated, and the gas can be removed together with the exhaust gas.

(5)在腔室10,設有進行借助排氣部40的排氣的排氣口14,噴嘴64朝向腔室10中的設有排氣口14的一側噴出氣體。因此,能夠產生朝向排氣的氣流而容易地排出顆粒。(5) The chamber 10 is provided with an exhaust port 14 for performing exhaust via the exhaust unit 40 , and the nozzle 64 injects gas toward the side of the chamber 10 on which the exhaust port 14 is provided. Therefore, it is possible to generate an airflow toward the exhaust gas and easily discharge particles.

(6)來自噴嘴63的氣體的噴出量在第二加熱後的冷卻中比在第一加熱後的冷卻中多。因此,朝向接觸部分的噴吹氣體的流量、用於排氣的氣體的流量變多,因此顆粒易被排出。噴嘴63為了對工件W的下表面進行冷卻而噴出口朝向斜上。要對被安裝於匣盒20的下表面的均熱板22噴吹氣體,必須對被安裝於匣盒20的上表面的均熱板22噴吹氣體。通過增多來自噴嘴63的氣體的噴出量,對設在匣盒20的下表面的均熱板22噴吹的氣體的流量變多,從而進一步排出顆粒。(6) The amount of gas ejected from the nozzle 63 is larger in the cooling after the second heating than in the cooling after the first heating. Therefore, the flow rate of the blowing gas toward the contact portion and the flow rate of the exhaust gas increase, so that the particles are easily discharged. In order to cool the lower surface of the workpiece W, the nozzle 63 has an ejection port facing obliquely upward. In order to blow gas to the vapor chamber 22 attached to the lower surface of the cassette 20 , it is necessary to blow gas to the vapor chamber 22 attached to the upper surface of the cassette 20 . By increasing the amount of gas ejected from the nozzle 63, the flow rate of the gas ejected onto the vapor chamber 22 provided on the lower surface of the cassette 20 increases, thereby further ejecting particles.

(7)來自噴嘴64的氣體的噴出量在第二加熱後的冷卻中比在第一加熱後的冷卻中多。因此,朝向接觸部分的噴吹氣體的流量、用於排氣的氣體的流量變多,因此顆粒容易被排出。(7) The amount of gas ejected from the nozzle 64 is larger in the cooling after the second heating than in the cooling after the first heating. Therefore, the flow rate of the blowing gas toward the contact portion and the flow rate of the exhaust gas increase, so that the particles are easily discharged.

(8)第一加熱以及第二加熱中的加熱的最高溫度相同。因此,能夠預先去除在第一加熱的溫度條件下有可能產生的顆粒。(8) The maximum heating temperatures in the first heating and the second heating are the same. Therefore, particles that may be generated under the temperature conditions of the first heating can be removed in advance.

(9)第二熱處理部74在從第一熱處理後的規定的基準時直至經過規定時間為止的期間,未收到通知工件W來到腔室10的信號的情況下,使加熱部50、供氣部60以及排氣部40執行第二熱處理。因此,在工件W未到來的空閒時間,能夠進行排出顆粒的空加熱,不會為了第二熱處理而妨礙工件W的生產,因此能夠抑制生產性的下降。(9) When the second heat treatment unit 74 does not receive a signal notifying that the workpiece W has arrived in the chamber 10 from the predetermined reference time after the first heat treatment until the predetermined time has elapsed, the second heat treatment unit 74 causes the heating unit 50 and the supply unit 74 to operate. The gas part 60 and the exhaust part 40 perform the second heat treatment. Therefore, during idle time when the workpiece W has not arrived, it is possible to perform idle heating to discharge particles, and the production of the workpiece W is not hindered for the second heat treatment. Therefore, a decrease in productivity can be suppressed.

(10)控制裝置70具有中斷處理部75,所述中斷處理部75在第二加熱中的升溫過程中收到通知工件W到來的信號的情況下,使第二加熱中斷。因此,能夠防止工件W的生產受到妨礙而導致生產效率下降。(10) The control device 70 has an interruption processing unit 75 that interrupts the second heating when a signal notifying the arrival of the workpiece W is received during the temperature rise process in the second heating. Therefore, it is possible to prevent the production of the workpiece W from being hindered and causing a decrease in production efficiency.

[第二實施方式] 對本發明的第二實施方式進行說明。第二實施方式的基本結構與所述第一實施方式相同。但是,第二實施方式中,第二熱處理部74在從第一熱處理後的規定的基準時開始直至經過為了進行第二熱處理所需的時間為止的期間,工件W未來到腔室10的情況下,使加熱部50、供氣部60以及排氣部40執行第二熱處理。 [Second Embodiment] The second embodiment of the present invention will be described. The basic structure of the second embodiment is the same as that of the first embodiment. However, in the second embodiment, when the workpiece W does not arrive in the chamber 10 in the second heat treatment unit 74 from the predetermined reference time after the first heat treatment until the time required to perform the second heat treatment has elapsed, , causing the heating unit 50 , the air supply unit 60 and the exhaust unit 40 to perform the second heat treatment.

更具體而言,所述第一實施方式中的流程圖的步驟S15中,將通知可接納工件W的信號發送至上游裝置。接下來,從收到信號的上游裝置發送通知下個工件W到來的預定時間的信號。另外,所謂下個工件W到來的預定時間,是指在下個工件W來到熱處理裝置1之前需要多少時間這一時間間隔。而且,也有時將下個工件W到來的預定時間稱作t1。一旦收到從上游裝置發送的信號,則對下個工件W到來的預定時間與為了進行第二熱處理所需的時間進行比較。若比較的結果是判斷為在下個工件W來到熱處理裝置1之前能夠進行第二熱處理,則進行步驟S19以後的處理。但是,若直至下個工件W到來為止的預定時間比為了進行第二熱處理所需的時間短,則將腔室10設為待機狀態,當下個工件W到來時,進行步驟S01以後的處理。另外,也有時將為了進行第二熱處理所需的時間稱作t2。More specifically, in step S15 of the flowchart in the first embodiment, a signal notifying that the workpiece W can be accepted is sent to the upstream device. Next, a signal notifying a predetermined time of the arrival of the next workpiece W is transmitted from the upstream device that received the signal. In addition, the scheduled time for the arrival of the next workpiece W refers to a time interval of how much time is required before the next workpiece W arrives at the heat treatment apparatus 1 . Furthermore, the scheduled time for the arrival of the next workpiece W may be called t1. Once the signal sent from the upstream device is received, the scheduled time of arrival of the next workpiece W is compared with the time required to perform the second heat treatment. If the result of the comparison is that it is determined that the second heat treatment can be performed before the next workpiece W comes to the heat treatment apparatus 1, then the processing after step S19 is performed. However, if the predetermined time until the arrival of the next workpiece W is shorter than the time required to perform the second heat treatment, the chamber 10 is put into a standby state, and when the next workpiece W arrives, the processing from step S01 onward is performed. In addition, the time required to perform the second heat treatment may be referred to as t2.

t2例如是為了進行第二熱處理中的加熱與冷卻的一個循環所需的時間。對t1與t2進行比較,若t1≧t2,則進行第二熱處理。另外,在規定的基準時為時刻的情況下,也可根據下個工件W來到熱處理裝置1的預定時刻與規定的基準時來求出t1。t2 is, for example, the time required to perform one cycle of heating and cooling in the second heat treatment. Compare t1 and t2, and if t1≧t2, perform the second heat treatment. In addition, when the predetermined reference time is the time, t1 may be obtained based on the predetermined time when the next workpiece W comes to the heat treatment apparatus 1 and the predetermined reference time.

而且,若t1≧t2,則算出第二熱處理的重複次數。重複次數是通過將t1除以t2,並舍去除算所得的值的小數點以後而算出。此處,若所獲得的重複次數的值小於第二規定次數的值,則將第二規定次數的值變更為重複次數的值。由此,能夠在工件W未到來的空閒時間進行排出顆粒的空加熱,不會為了第二熱處理而妨礙工件W的生產,因此能夠抑制生產性的下降。Furthermore, if t1≧t2, the number of repetitions of the second heat treatment is calculated. The number of repetitions is calculated by dividing t1 by t2 and discarding the calculated value after the decimal point. Here, if the obtained value of the number of repetitions is smaller than the value of the second predetermined number of times, the value of the second predetermined number of times is changed to the value of the number of repetitions. This makes it possible to perform idle heating to discharge particles during idle time before the arrival of the workpiece W. This prevents the second heat treatment from interfering with the production of the workpiece W. Therefore, it is possible to suppress a decrease in productivity.

[變形例] (1)第二熱處理中的第二加熱與冷卻的次數並不限定於上文例示的次數。而且,如所述的第二實施方式中所例示的那樣,在預先知曉了直至下個工件W到來為止的時間的情況下,第二熱處理部74也可根據此時間來變更次數。例如,若時間相對較短,則可減少次數,若時間長,則可增多次數。此時間可根據來自上游裝置的信號、實際的運用結果來設定。 [Modification] (1) The number of times of second heating and cooling in the second heat treatment is not limited to the number of times illustrated above. Furthermore, as illustrated in the second embodiment, if the time until the arrival of the next workpiece W is known in advance, the second heat treatment unit 74 may change the number of times based on this time. For example, if the time is relatively short, the number of reps can be reduced, and if the time is long, the number of reps can be increased. This time can be set based on the signal from the upstream device and the actual operation results.

(2)也可在第二熱處理中的冷卻後,具體而言,成為第三規定溫度後使開閉門11移動至開位置,並在第四規定時間的期間維持開位置。在第四規定時間的期間,冷卻氣體繼續從噴嘴63以及噴嘴64噴出。因此,通過在第四規定時間的期間將開閉門11設為開位置,能夠將腔室10的內部產生的顆粒從開口10a排出至熱處理裝置1的外部。(2) After cooling in the second heat treatment, specifically, after reaching the third predetermined temperature, the opening and closing door 11 may be moved to the open position and maintained in the open position during the fourth predetermined time. During the fourth predetermined time period, the cooling gas continues to be ejected from the nozzles 63 and 64 . Therefore, by setting the opening and closing door 11 to the open position during the fourth predetermined time period, the particles generated inside the chamber 10 can be discharged to the outside of the heat treatment apparatus 1 from the opening 10 a.

冷卻氣體從開口10a排出至熱處理裝置1的外部,由此,腔室10內的冷卻氣體的流動方式發生變化。因此,在第二加熱後的冷卻時,氣體也會流至氣體未流動而淤塞的部分。因此,進一步排出顆粒。而且,開口10a的開口面積比設在腔室10的頂板面的排氣口14大。因此,開口10a的流導(conductance)比排氣口14的流導小。其結果,排出的氣體的量增加,因此進一步排出顆粒。因此,能夠提高顆粒的排出能力。The cooling gas is discharged from the opening 10 a to the outside of the heat treatment device 1 , thereby changing the flow pattern of the cooling gas in the chamber 10 . Therefore, during cooling after the second heating, the gas also flows to the portion where the gas does not flow and becomes clogged. Therefore, particles are further discharged. Furthermore, the opening area of the opening 10 a is larger than the exhaust port 14 provided on the ceiling surface of the chamber 10 . Therefore, the conductance of the opening 10 a is smaller than the conductance of the exhaust port 14 . As a result, the amount of discharged gas increases, so particles are further discharged. Therefore, the particle discharge capability can be improved.

另外,第四規定時間可通過進行模擬或實驗等來適當決定。第四規定時間例如可設為30秒至10分鐘左右。而且,也可求出下個工件W到來的預定時刻與規定的基準時的差值時間,若差值時間少於為了進行第二熱處理所需的時間,則使開閉門11移動至開位置,從噴嘴63以及噴嘴64繼續冷卻氣體的噴出,直至下個工件W到來為止。而且,在使開閉門11移動至開位置時,設於排氣口14的閥43b既可關閉,也可仍保持打開。In addition, the fourth predetermined time can be appropriately determined by conducting simulations, experiments, or the like. The fourth predetermined time can be set to about 30 seconds to 10 minutes, for example. Furthermore, the difference time between the scheduled time of arrival of the next workpiece W and a predetermined reference time may be obtained. If the difference time is less than the time required to perform the second heat treatment, the opening and closing door 11 is moved to the open position. The cooling gas continues to be ejected from the nozzles 63 and 64 until the next workpiece W arrives. Furthermore, when the opening and closing door 11 is moved to the open position, the valve 43b provided in the exhaust port 14 may be closed or may remain open.

(3)工件W的基板、溶液並不限定於上文例示的基板、溶液。溶液也包含液體經臨時煆燒而成為半固化狀態(不流動的狀態)的溶液。有機材料只要可通過溶劑來溶解,則並無特別限定。加熱前的工件W也可僅為基板。而且,也可適用於對工件W進行加熱而在工件W的表面形成無機膜等,或者對工件W的表面進行處理的熱處理裝置1。(3) The substrate and solution of the workpiece W are not limited to the substrate and solution illustrated above. The solution also includes a solution in which the liquid is temporarily burned and becomes a semi-solidified state (non-flowing state). The organic material is not particularly limited as long as it can be dissolved with a solvent. The workpiece W before heating may be only the substrate. Furthermore, it is also applicable to the heat treatment apparatus 1 which heats the workpiece W to form an inorganic film or the like on the surface of the workpiece W, or processes the surface of the workpiece W.

(4)通過使用匣盒20,多個均熱板22的出入變得容易,因此可實現維護的容易化。但是本發明的熱處理裝置1中,匣盒20並非必需。即,在支撐部30對工件W的支撐既包含直接支撐工件W的情況,也包含間接支撐工件W的情況。(4) By using the cassette 20, the plurality of vapor chambers 22 can be easily put in and out, so maintenance can be facilitated. However, in the heat treatment apparatus 1 of the present invention, the cassette 20 is not essential. That is, the support of the workpiece W by the support part 30 includes both the case where the workpiece W is directly supported and the case where the workpiece W is indirectly supported.

(5)對於加熱部50的加熱器51,也可將進行第一熱處理的加熱器與進行第二熱處理的加熱器設為獨立的加熱器。但是通過如前述那樣使用共同的加熱器51,能夠實現消耗電力的降低、製造成本的降低、省空間化等。而且,加熱器51只要能夠在比大氣壓減壓的環境中加熱工件W,則並不限定於前述中例示的加熱器。(5) The heater 51 of the heating unit 50 may be a heater for performing the first heat treatment and a heater for performing the second heat treatment as independent heaters. However, by using the common heater 51 as described above, it is possible to reduce power consumption, reduce manufacturing costs, save space, and the like. In addition, the heater 51 is not limited to the heater illustrated above as long as it can heat the workpiece W in an environment with a pressure lower than the atmospheric pressure.

(6)氣體控制部65b被設在配管61、配管62與氣體源65a之間,控制冷卻氣體對配管61、配管62的供給、停止、流量等,但也可在配管61與配管62分別設置氣體控制部,從而各別地控制冷卻氣體從噴嘴63與噴嘴64的噴出。例如,也可在第一熱處理中不進行冷卻氣體從噴嘴64的噴出,而僅在第二熱處理中的降溫步驟中進行冷卻氣體從噴嘴64的噴出。(6) The gas control unit 65b is provided between the piping 61 and the piping 62 and the gas source 65a to control the supply, stop and flow rate of the cooling gas to the piping 61 and the piping 62. However, it may be provided separately in the piping 61 and the piping 62. The gas control unit thereby controls the ejection of the cooling gas from the nozzles 63 and 64 respectively. For example, the cooling gas may not be ejected from the nozzle 64 in the first heat treatment, and the cooling gas may be ejected from the nozzle 64 only in the temperature lowering step in the second heat treatment.

(7)第一加熱是以兩步驟來進行,但並不限定於此。可根據工件W的種類或塗布於工件W的表面的溶液的成分或狀態來選擇,也可為一步驟,還可為三步驟以上。(7) The first heating is performed in two steps, but it is not limited to this. The process may be selected based on the type of the workpiece W or the composition or state of the solution applied to the surface of the workpiece W, and may be one step or three or more steps.

(8)噴嘴64是相對於腔室10內的構件彼此易產生摩擦的部分而使噴出口朝向腔室10中的設有排氣口14的一側噴出冷卻氣體,但並不限定於此。噴嘴64也可使噴出口朝向腔室10中的與設有排氣口14的一側為相反側噴出冷卻氣體。進而,噴嘴64是朝向對工件W進行處理的區域的外側噴出冷卻氣體,但並不限定於此。噴嘴64也可對被安裝在匣盒20的上表面或者匣盒20的下表面的均熱板噴出冷卻氣體。或者,噴嘴64也可對被安裝在匣盒20的側面的均熱板噴出冷卻氣體。(8) The nozzle 64 is configured to eject the cooling gas toward the side of the chamber 10 where the exhaust port 14 is provided with respect to the parts in the chamber 10 where friction is likely to occur. However, the nozzle 64 is not limited to this. The nozzle 64 may have its ejection port ejecting the cooling gas toward the side opposite to the side where the exhaust port 14 is provided in the chamber 10 . Furthermore, the nozzle 64 injects the cooling gas toward the outside of the area where the workpiece W is processed, but is not limited to this. The nozzle 64 may also spray the cooling gas to the vapor chamber installed on the upper surface of the cassette 20 or the lower surface of the cassette 20 . Alternatively, the nozzle 64 may spray the cooling gas toward the vapor chamber installed on the side of the cassette 20 .

(9)氣體供給裝置65是供給冷卻氣體,但並不限定於此。氣體供給裝置65也可具有多個氣體源65a,從而可根據腔室10內的溫度來變更對腔室10內供給的氣體。例如也可為,一旦腔室10內的溫度達到200℃以下,則取代冷卻氣體而將清潔乾燥空氣(Clean Dry Air,CDA)供給至腔室10內。例如也可在第二熱處理中的冷卻後,在將開閉門11打開的期間即第四規定時間的期間,將CDA供給至腔室10內。(9) The gas supply device 65 supplies cooling gas, but is not limited to this. The gas supply device 65 may have a plurality of gas sources 65 a so that the gas supplied to the chamber 10 can be changed according to the temperature in the chamber 10 . For example, once the temperature in the chamber 10 reaches 200° C. or lower, clean dry air (Clean Dry Air, CDA) may be supplied into the chamber 10 instead of the cooling gas. For example, after cooling in the second heat treatment, CDA may be supplied into the chamber 10 while the door 11 is open, that is, during the fourth predetermined time.

[其他實施方式] 本發明並不限定於所述實施方式,也包含下述所示的其他實施方式。而且,本發明也包含將所述實施方式以及下述的其他實施方式全部或任一個組合而成的形態。進而,對於這些實施方式,可在不脫離發明範圍的範圍內進行各種省略或置換、變更,其變形也包含於本發明。 [Other embodiments] The present invention is not limited to the above-described embodiments, but also includes other embodiments shown below. Furthermore, the present invention also includes a combination of all or any of the above-described embodiments and other embodiments described below. Furthermore, various omissions, substitutions, and changes can be made to these embodiments without departing from the scope of the invention, and modifications thereof are also included in the present invention.

1:熱處理裝置 10:腔室 10a、10b:開口 10c:密封材料 10d、10e:凸緣 11:開閉門 12、13、14:排氣口 15:蓋 20:匣盒 20a:開口部 21:匣盒框架 21a:梁 22:均熱板 23:工件支撐部 24:匣盒支撐部 30:支撐部 31:框架 32:支承部 40:排氣部 41:第一排氣部 41a:配管 41b:排氣泵 41c:壓力調整部 42:第二排氣部 42a:配管 42b:排氣泵 42c:壓力調整部 43:第三排氣部 43a:配管 43b:閥 50:加熱部 51:加熱器 60:供氣部 61、62:配管 63、64、65:氣體供給裝置 65a:氣體源 65b:氣體控制部 70:控制裝置 71:開閉控制部 72:排氣控制部 73:第一熱處理部 74:第二熱處理部 75:中斷處理部 S01~S26:步驟 W:工件 1:Heat treatment device 10: Chamber 10a, 10b: opening 10c:Sealing material 10d, 10e: flange 11:Open and close the door 12, 13, 14: Exhaust port 15: cover 20:Box 20a: opening 21: Box frame 21a:Liang 22:Vapor chamber 23: Workpiece support part 24: Cassette support part 30: Support part 31:Frame 32:Support part 40:Exhaust part 41:First exhaust part 41a:Piping 41b:Exhaust pump 41c: Pressure adjustment part 42:Second exhaust part 42a:Piping 42b:Exhaust pump 42c: Pressure adjustment part 43:Third exhaust part 43a:Piping 43b: valve 50:Heating part 51:Heater 60:Air supply department 61, 62: Piping 63, 64, 65: Gas supply device 65a:Gas source 65b: Gas control department 70:Control device 71: Opening and closing control part 72: Exhaust control department 73:First heat treatment department 74:Second Heat Treatment Department 75: Interrupt processing department S01~S26: Steps W: workpiece

圖1是用於例示實施方式的熱處理裝置的示意正面圖。 圖2是圖1中的熱處理裝置的A-A箭頭示意剖面圖。 圖3是圖1中的熱處理裝置的B-B箭頭示意剖面圖。 圖4是表示匣盒的內部以及供氣部的配管及噴嘴的示意立體圖。 圖5是表示第一熱處理中的溫度變化的圖表。 圖6是表示第二熱處理中的溫度變化的圖表。 圖7是表示第一實施方式的熱處理裝置的處理流程的流程圖。 FIG. 1 is a schematic front view of a heat treatment apparatus illustrating the embodiment. FIG. 2 is a schematic cross-sectional view of the heat treatment device taken along arrow A-A in FIG. 1 . FIG. 3 is a schematic cross-sectional view of the heat treatment device taken along arrow B-B in FIG. 1 . FIG. 4 is a schematic perspective view showing the inside of the cassette and the piping and nozzle of the air supply unit. FIG. 5 is a graph showing temperature changes in the first heat treatment. FIG. 6 is a graph showing temperature changes in the second heat treatment. FIG. 7 is a flowchart showing the processing flow of the heat treatment apparatus according to the first embodiment.

1:熱處理裝置 1:Heat treatment device

10:腔室 10: Chamber

10a:開口 10a: Open your mouth

10c:密封材料 10c:Sealing material

10d:凸緣 10d: flange

11:開閉門 11:Open and close the door

12、13、14:排氣口 12, 13, 14: Exhaust port

20:匣盒 20:Box

20a:開口部 20a: opening

23:工件支撐部 23: Workpiece support part

24:匣盒支撐部 24: Cassette support part

30:支撐部 30: Support part

31:框架 31:Frame

32:支承部 32:Support part

40:排氣部 40:Exhaust part

41:第一排氣部 41:First exhaust part

41a:配管 41a:Piping

41b:排氣泵 41b:Exhaust pump

41c:壓力調整部 41c: Pressure adjustment part

42:第二排氣部 42:Second exhaust part

42a:配管 42a:Piping

42b:排氣泵 42b:Exhaust pump

42c:壓力調整部 42c: Pressure adjustment part

43:第三排氣部 43:Third exhaust part

43a:配管 43a:Piping

43b:閥 43b: valve

50:加熱部 50:Heating part

51:加熱器 51:Heater

60:供氣部 60:Air supply department

61、62:配管 61, 62: Piping

63、64:氣體供給裝置 63, 64: Gas supply device

70:控制裝置 70:Control device

71:開閉控制部 71: Opening and closing control part

72:排氣控制部 72: Exhaust control department

73:第一熱處理部 73:First heat treatment department

74:第二熱處理部 74:Second Heat Treatment Department

75:中斷處理部 75: Interrupt processing department

W:工件 W: workpiece

Claims (14)

一種熱處理裝置,包括: 腔室,能夠維持比大氣壓減壓的環境; 排氣部,連接於所述腔室,對所述腔室內進行排氣; 支撐部,支撐被收容在所述腔室內的工件; 加熱部,進行在所述工件被支撐於所述支撐部的狀態下對所述工件進行加熱的第一加熱,且進行在所述工件未被支撐於所述支撐部的狀態下以比所述第一加熱快的升溫速度對所述腔室內進行加熱的第二加熱;以及 供氣部,在所述第一加熱後以及所述第二加熱後,對腔室內供給氣體,由此來進行冷卻。 A heat treatment device including: Chamber, capable of maintaining an environment at reduced pressure than atmospheric pressure; An exhaust part, connected to the chamber, exhausts the chamber; a support part that supports the workpiece accommodated in the chamber; The heating unit performs first heating for heating the workpiece in a state where the workpiece is supported by the support unit, and performs heating at a temperature higher than the said workpiece when the workpiece is not supported by the support unit. The fast heating rate of the first heating is used to heat the second heating in the chamber; and The gas supply unit supplies gas into the chamber after the first heating and after the second heating, thereby cooling the chamber. 如請求項1所述的熱處理裝置,其中 所述加熱部以及所述供氣部多次進行所述第二加熱以及所述第二加熱後的冷卻。 The heat treatment device according to claim 1, wherein The heating part and the air supply part perform the second heating and the cooling after the second heating multiple times. 如請求項1所述的熱處理裝置,其中 設有第一噴嘴,所述第一噴嘴與所述供氣部連接,朝向所述工件的下表面噴出所述氣體。 The heat treatment device according to claim 1, wherein A first nozzle is provided, and the first nozzle is connected to the gas supply part and ejects the gas toward the lower surface of the workpiece. 如請求項3所述的熱處理裝置,其中 設有第二噴嘴,所述第二噴嘴與所述供氣部連接,對所述腔室內的構件的接觸部分噴吹所述氣體。 The heat treatment device according to claim 3, wherein A second nozzle is provided, and the second nozzle is connected to the gas supply part and blows the gas to the contact portion of the component in the chamber. 如請求項4所述的熱處理裝置,其中 在所述腔室,設有進行借助所述排氣部的排氣的排氣口, 所述第二噴嘴朝向所述腔室中的設有所述排氣口的一側噴出所述氣體。 The heat treatment device according to claim 4, wherein The chamber is provided with an exhaust port for performing exhaust via the exhaust portion, The second nozzle sprays the gas toward the side of the chamber where the exhaust port is provided. 如請求項3所述的熱處理裝置,其中 來自所述第一噴嘴的所述氣體的噴出量在所述第二加熱後的冷卻中比在所述第一加熱後的冷卻中多。 The heat treatment device according to claim 3, wherein The amount of gas ejected from the first nozzle is larger in the cooling after the second heating than in the cooling after the first heating. 如請求項4所述的熱處理裝置,其中 來自所述第二噴嘴的所述氣體的噴出量在所述第二加熱後的冷卻中比在所述第一加熱後的冷卻中多。 The heat treatment device according to claim 4, wherein The ejection amount of the gas from the second nozzle is larger in the cooling after the second heating than in the cooling after the first heating. 如請求項1所述的熱處理裝置,其中 所述第一加熱以及所述第二加熱中的加熱的最高溫度相同。 The heat treatment device according to claim 1, wherein The highest heating temperatures in the first heating and the second heating are the same. 如請求項1至請求項8中任一項所述的熱處理裝置,其中 在所述腔室設有開口,且具有開閉門,所述開閉門相對於所述開口而移動至開位置與閉位置,由此來切換所述腔室的密閉狀態以及開放狀態, 在所述第二加熱以及所述第二加熱後的冷卻結束後,繼續所述氣體的噴出且使所述開閉門移動至開位置。 The heat treatment device according to any one of claims 1 to 8, wherein The chamber is provided with an opening and has an opening and closing door. The opening and closing door moves to an open position and a closed position relative to the opening, thereby switching the closed state and the open state of the chamber, After the second heating and the cooling after the second heating are completed, the gas is continued to be ejected and the opening and closing door is moved to the open position. 如請求項1所述的熱處理裝置, 具有對所述排氣部、所述加熱部、所述供氣部進行控制的控制裝置, 所述控制裝置具有: 第一熱處理部,使所述加熱部以及所述供氣部執行進行所述第一加熱以及冷卻的第一熱處理;以及 第二熱處理部,在進行了所述第一熱處理的所述工件從所述腔室排出後,使所述加熱部、所述供氣部以及所述排氣部執行進行所述第二加熱、冷卻的第二熱處理。 The heat treatment device as claimed in claim 1, having a control device for controlling the exhaust part, the heating part, and the air supply part, The control device has: a first heat treatment unit that causes the heating unit and the air supply unit to perform the first heat treatment of performing the first heating and cooling; and The second heat treatment part causes the heating part, the air supply part and the exhaust part to perform the second heating after the workpiece that has been subjected to the first heat treatment is discharged from the chamber. Cooling second heat treatment. 如請求項10所述的熱處理裝置,其中 所述第二熱處理部在從所述第一熱處理後的規定的基準時直至經過規定時間為止的期間,未收到通知所述工件來到所述腔室的信號的情況下,使所述加熱部、所述供氣部以及所述排氣部執行所述第二熱處理。 The heat treatment device according to claim 10, wherein When the second heat treatment unit does not receive a signal notifying that the workpiece has arrived in the chamber from a predetermined reference time after the first heat treatment until a predetermined time has elapsed, the second heat treatment unit causes the heating The second heat treatment is performed on the air supply part and the exhaust part. 如請求項10所述的熱處理裝置,其中 所述第二熱處理部在從所述第一熱處理後的規定的基準時直至經過為了進行所述第二熱處理所需的時間為止的期間,所述工件尚未來到所述腔室的情況下,使所述加熱部、所述供氣部以及所述排氣部執行所述第二熱處理。 The heat treatment device according to claim 10, wherein In the second heat treatment section, when the workpiece has not yet arrived in the chamber from a predetermined reference time after the first heat treatment until the time required to perform the second heat treatment has elapsed, The heating part, the air supply part, and the exhaust part are caused to perform the second heat treatment. 如請求項10至請求項12中任一項所述的熱處理裝置,其中 所述控制裝置具有中斷處理部,所述中斷處理部在所述第二加熱中的升溫過程中收到通知所述工件到來的信號的情況下,使所述第二加熱中斷。 The heat treatment device according to any one of claims 10 to 12, wherein The control device includes an interruption processing unit that interrupts the second heating when a signal notifying the arrival of the workpiece is received during a temperature rise in the second heating. 一種熱處理方法,包括: 第一熱處理,在工件被支撐於經減壓的腔室內的支撐部的狀態下,加熱部對所述工件進行加熱後,供氣部供給氣體而進行冷卻; 工件排出處理,在所述第一熱處理後,從所述腔室中排出所述工件;以及 第二熱處理,在所述工件未被支撐於所述支撐部的狀態下,所述加熱部通過比所述第一熱處理快的升溫速度對所述腔室內進行加熱後,所述供氣部供給所述氣體而進行冷卻,排氣部對所述腔室內進行排氣。 A heat treatment method including: In the first heat treatment, in a state where the workpiece is supported on the support part in the depressurized chamber, the heating part heats the workpiece, and the gas supply part supplies gas to cool it; a workpiece discharge process to discharge the workpiece from the chamber after the first heat treatment; and In the second heat treatment, in a state where the workpiece is not supported by the support part, the heating part heats the chamber at a faster temperature rise rate than the first heat treatment, and the air supply part supplies The gas is cooled, and the exhaust part exhausts the chamber.
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