TW202334495A - 基座總成及噴淋頭總成 - Google Patents

基座總成及噴淋頭總成 Download PDF

Info

Publication number
TW202334495A
TW202334495A TW111149858A TW111149858A TW202334495A TW 202334495 A TW202334495 A TW 202334495A TW 111149858 A TW111149858 A TW 111149858A TW 111149858 A TW111149858 A TW 111149858A TW 202334495 A TW202334495 A TW 202334495A
Authority
TW
Taiwan
Prior art keywords
wafer
plenum
wafer support
channel
fluid communication
Prior art date
Application number
TW111149858A
Other languages
English (en)
Inventor
羅漢 雷恩
赫伯特 特后司特
艾瑞克 詹姆斯 希羅
安基特 金堤
傑瑞德 李 威克勒
麥克 史墨塞
張舒揚
陶德 羅伯特 鄧恩
舒班 加格
Original Assignee
荷蘭商Ａｓｍ Ｉｐ私人控股有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 filed Critical 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司
Publication of TW202334495A publication Critical patent/TW202334495A/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

一種半導體處理裝置包含一基座總成，基座總成包含經組態以支撐一晶圓的一晶圓支撐件。晶圓支撐件包含：經組態以支撐晶圓的一晶圓支撐件主體；自晶圓支撐件主體之一內側部份側向延伸至晶圓支撐件主體之一外側部份的一沖洗通道；設置於晶圓支撐件之外側部份且與沖洗通道流體連通的一第一充氣部通道；以及將沖洗氣體遞送至晶圓之一邊緣的一出口；出口與第一充氣部通道流體連通；在與晶圓支撐件主體對立之一表面上的一沖洗氣體供應孔。沖洗氣體供應孔與沖洗通道流體連通，以及與第一充氣部通道及沖洗通道流體連通的複數個第一沖洗孔。

Description

具有晶圓邊緣沖洗的半導體處理裝置
本領域係關於具有晶圓邊緣沖洗之半導體處理裝置。例如，本領域大致上與一基座總成相關，基座總成包括一或多個通道以將沖洗氣體遞送至半導體晶圓之邊緣。額外或替代地，本領域係關於一噴淋頭總成，噴淋頭總成經組態以供應反應物氣體至半導體晶圓之正面並供應沖洗氣體至晶圓之邊緣。
在半導體處理期間，各種（一或多個）汽化前驅物被饋送至反應室中。在一些應用中，在環境壓力及溫度呈固相或液相之合適源化學物在一源容器中提供。此等固體或液體源物質可被加熱至昇華或蒸發，以生成用於反應製程（諸如，氣相沉積）的汽化前驅物。化學氣相沉積(CVD)可需要將前驅物蒸氣的連續流供應至反應室，而原子層沉積(ALD)、脈衝CVD及其混合可需要至反應室的連續流或脈衝供應，取決於所欲組態。
鑒於上文提及的情形，所揭示實施例之一或多個態樣的一個目標為提供一基座總成以消除任何背側晶圓沉積。
在一些實施例中，基座總成可包括經組態以支撐一晶圓的一晶圓支撐件，晶圓支撐件可包含一晶圓支撐件主體，晶圓支撐件主體經組態以支撐晶圓在晶圓支撐件主體之一支撐表面上。晶圓支撐件可進一步包含自晶圓支撐件主體之一內側部份側向延伸至晶圓支撐件主體之一外側部份的一沖洗通道、以及設置於晶圓支撐件之外側部份與沖洗通道流體連通之一第一充氣部通道、及用以將沖洗氣體遞送至晶圓之一邊緣的一出口，出口與第一充氣部通道流體連通。基座總成可進一步包含在與晶圓支撐件主體之支撐表面對立之一表面上的一沖洗氣體供應孔，沖洗氣體供應孔與沖洗通道流體連通，且包含與第一充氣部通道及沖洗通道流體連通的複數個第一沖洗孔。晶圓支撐件可包含一圓柱體，且出口可與晶圓支撐件同心，及自內側部份對稱延伸之複數個沖洗通道。
在一些實施例中，晶圓支撐件主體可包含經組態以支撐晶圓之一凹部部份，且出口可形成於凹部部份上且與第一充氣部流體連通。晶圓支撐件可進一步包含在凹部部份上的一環形脊，且環形脊可與待處置的晶圓之一圓周同心。環形脊可經組態以設置在待處置的晶圓之一周部內。出口可沿著環形脊的一最外周邊形成。凹部部份的一深度在環形脊之一外徑側可比環形脊之一內徑側更深，且朝向圓柱體的一周部逐漸減小。
在一些實施例中，一第二充氣部通道可形成在晶圓支撐件之外側部份，其在晶圓支撐件主體之一厚度方向上定位成與第一充氣部垂直間隔開。晶圓支撐件可進一步包含複數個第二沖洗孔，其等提供與第一充氣部通道及第二充氣部通道流體連通。第一沖洗孔與第二充氣通道及各別沖洗通道流體連通。第二沖洗孔之一數目可大於第一沖洗孔之數目。
在一些實施例中，基座總成可耦接至一軸，軸包含一真空管及一內側氣體供應管，且複數個沖洗氣體供應孔可經組態以通過內側氣體供應管流體連接至一惰性氣體源。晶圓支撐件主體可包含鎳鉻鉬合金。基座總成可進一步包含設置在晶圓支撐件之內側部份的一真空卡盤凹槽，及通過真空管與複數個真空卡盤凹槽流體連通的一真空卡盤孔。真空卡盤孔可經組態以與一真空源流體連接。晶圓支撐件主體可包含Hastelloy ®C22 ®材料。
在一些實施例中，一種基座總成可包含經組態以支撐一晶圓的一晶圓支撐件，晶圓支撐件可包含經組態以支撐待處置的一晶圓的一晶圓支撐件主體、自晶圓支撐件主體之一內側部份側向延伸至晶圓支撐件主體之一外側部份的複數個沖洗通道、設置在晶圓支撐件之外側部份的一第一充氣部通道、以及與第一充氣部垂直間隔開定位的一第二充氣部通道。基座總成可進一步包含藉由複數個第一沖洗孔與沖洗通道流體連通並藉由複數個第二沖洗孔與第一充氣部流體連通的一第二充氣部通道，且包含與第一充氣部流體連通的一出口，用以將沖洗氣體遞送至晶圓之一邊緣。晶圓支撐件主體可包含經組態以支撐晶圓的一凹部部份，且出口可形成於凹部部份上並與第一充氣部流體連通。基座總成可耦接至一軸，軸包含連接至一惰性氣體源之一沖洗氣體供應管。
在一些實施例中，一種基座總成可包含一蓋及一加熱器底座，其中蓋包含晶圓支撐件，且與凹部部份對立之表面係經組態以設置於加熱器底座上。晶圓支撐件主體可包含經組態以支撐晶圓的凹部部份，且出口形成於凹部部份上並與第一充氣部流體連通。加熱器底座可耦接至一軸，軸包含一真空管及一內側氣體供應管。加熱器底座可包含經組態以耦接至各別真空卡盤孔的一或多個真空孔，及經組態以耦接至各別沖洗氣體供應孔的一或多個沖洗氣體孔。一或多個真空孔可經組態以通過真空管流體連接至一真空源，且一或多個沖洗孔可經組態以通過內側氣體供應管流體連接至一內側氣體源。 基座總成可包含三個溫度控制區，其允許對外側部份的較佳調諧並改善晶圓內(WiW)非均勻性(NU%)。
本發明之一或多個態樣的另一目標係用以提供一種用於處置一晶圓的噴淋頭總成，其防止逆回擴散使得背側晶圓沉積被消除。
在一些實施例中，噴淋頭總成可包含一噴淋頭充氣部、與噴淋頭充氣部流體連通之複數個開口、及經組態以設置在待處置的晶圓的一周部之外並與一沖洗氣體源流體連通的邊緣沖洗注入孔。開口可經組態以傳達來自噴淋頭充氣部的（多個）汽化前驅物並至經組態以支撐晶圓之一晶圓支撐件上，且邊緣沖洗注入孔可經配置以引導一沖洗氣體，以防止氣體逆回擴散至晶圓。
在一些實施例中，噴淋頭總成可包括複數個邊緣沖洗注入孔，其等相對於待處置的晶圓周向地向外引導。噴淋頭總成可進一步包含複數個邊緣沖洗注入孔。邊緣沖洗注入孔可不與噴淋頭充氣部流體連通。
在一些實施例中，一種用於處置一晶圓之噴淋頭總成可包含一噴淋頭充氣部、與噴淋頭充氣部流體連通之複數個開口，開口經組態以傳達來自噴淋頭充氣部的一汽化前驅物且至晶圓上，且噴淋頭總成包含經組態以設置在待處置的晶圓之一周部之外且與一沖洗氣體源流體連通的一邊緣沖洗注入孔。沖洗氣體可相對於晶圓支撐件周向地向外引導。噴淋頭總成可進一步包含複數個邊緣沖洗注入孔。
在一些實施例中，一種用於處置一晶圓之噴淋頭總成可包含一噴淋頭充氣部、經組態以支撐晶圓之一基材支撐件、及與噴淋頭充氣部流體連通且設置於基材支撐件上方之複數個開口。開口可經組態以傳達來自噴淋頭充氣部的一汽化前驅物且至晶圓上。在噴淋頭總成與基材支撐件之間的一間隙可在噴淋頭總成之一外側邊緣窄於基材支撐件上方。間隙可至少部分地由一凹部部份定義，且凹部部份之一深度朝向噴淋頭之一外側邊緣逐漸變化（例如，減小）。
然而，本發明之一或多個態樣的另一目標係提供一種用於沖洗一晶圓之邊緣的方法。
在一些實施例中，方法可包括將待處置的一晶圓放置在一晶圓支撐件之一支撐表面上、側向沿著晶圓支撐件之一沖洗氣體通道遞送一沖洗氣體至晶圓支撐件之一外側部份、及將沖洗氣體自沖洗通道向上引導通過一第一充氣部並通過一出口至晶圓之一外側邊緣。方法可進一步包含藉由將真空施加至一真空卡盤來將晶圓固持至晶圓支撐件上，以及將前驅物氣體施加至晶圓。沖洗氣體可經引導自沖洗通道通過第一充氣部、一第二充氣部、及一出口。
在一些實施例中，方法可包含將待處置的一晶圓放置於一基材支撐件上、自一噴淋頭提供一前驅物氣體至晶圓、及通過待處置的晶圓之一周部之外的一邊緣沖洗注入孔遞送一沖洗氣體。沖洗氣體可周向地向外引導。
在一些實施例中，方法可包含將待處置的一晶圓放置於一基材支撐件上、自一噴淋頭提供一前驅物氣體至晶圓、及相對於噴淋頭側向引導前驅物氣體通過在噴淋頭與基材支撐件之間的一間隙，間隙在噴淋頭之一外側邊緣窄於晶圓上方。
在下列詳細描述中，提出許多具體細節以便提供對實施例之通透理解。然而，對於本領域具有通常知識者顯而易見的是實施例可無須此等具體細節而實踐。在其他例子中，未詳細描述熟知的方法、程序、組件、及機構，以免不必要地模糊化本發明的態樣。
大致上，在半導體製造步驟中的膜形成中使用的此等設備中，基座及熱源可配置在晶圓下，且使用可自頂部供應均勻製程氣體的後表面加熱方法，其可在晶圓背側上產生膜生長。在沉積製程期間，由於來自晶圓後的無效體積(dead volume)的前驅物逆回擴散所造成的背側沉積，對於一些製程在晶圓邊緣上觀測到一高厚度。從晶圓的背側沖洗晶圓邊緣將消除晶圓背側上的沉積，並且亦允許更好的晶圓邊緣厚度調諧。為了能夠在處理期間背側沖洗並將晶圓牢固至基座，可使用/可提供真空卡盤基座或靜電卡盤基座以在沖洗背側時固持晶圓。基座亦可包含或充當加熱器以在處理期間加熱晶圓。
例如，可使用真空卡盤氮化鋁(AlN)基座加熱器，然而由於可加工性及耐久性差，專用邊緣沖洗通道可能不可用於AlN加熱器。可利用介於上部室與下部室之間的壓力差異所造成的來自下部室之流動來防止背側沉積。然而，控制流動係困難的，且僅可使用壓力差分來提供控制受限的流動速率範圍。進一步言，因為AlN加熱器之幾何形體係陶瓷，AlN加熱器無法具有大於10°C的邊緣偏差而無斷裂，且可能具有僅2區的溫度控制。對於某些製程，此造成放射率退化及厚度非均勻性(NU%)，其無法由外側區基座溫度調諧來恢復。因此，本領域中對提供晶圓邊緣厚度之增強調諧的基座總成存在一需求。
圖1係半導體處理裝置 100之示意圖，其繪示作為整體半導體處理裝置 100的部分之歧管 50。歧管 50可包括鑽孔 51，鑽孔向下朝向噴淋頭總成 40注入汽化前驅物。應理解，歧管 50可包括多個連接在一起的組塊，或可包含一單體(unitary body)。歧管 50可在反應室 52的上游連接。特定言之，鑽孔的出口可與反應物注入器連通，尤其是採噴淋頭總成 40形式的分散機構。如圖7至圖9中所示出，噴淋頭總成 40可包括噴淋頭充氣部 41。噴淋頭總成 40將汽化前驅物從歧管 50遞送到噴淋頭 40下方的反應空間。反應室 52包括經組態以在反應空間中支撐基材 W（例如，半導體晶圓）的晶圓支撐件 10。真空源 25可耦接至用於牢固晶圓之晶圓支撐件 10，且內側氣體源 24可通過閥(CV、PV)耦接至晶圓支撐件用於晶圓邊緣沖洗。雖然以單一晶圓噴淋頭類型的反應室示出，所屬技術領域中具有通常知識者將瞭解，歧管亦可連接至具有其他類型之注入器的其他類型之反應室（例如，批次類型或熔爐類型、水平或交叉流動反應器等）。
圖2係依據一個實施例之基座總成 1的示意圖。基座總成 1可經組態以在一處理處置期間支撐晶圓 W。基座總成 1可包含晶圓支撐件 10，其可包含晶圓支撐件主體 11，晶圓支撐件主體 11經組態以支撐待處置晶圓 W於晶圓支撐件主體 11的支撐表面上。晶圓支撐件主體 11之支撐表面可包含一凹部部份以支撐晶圓 W。基座總成 1可進一步包含複數個第一沖洗孔 19，其等與第一充氣部通道 15及沖洗通道 12流體連通。
圖3係晶圓支撐件 10之示意圖，其示出自內側部份 13延伸至晶圓支撐件 10之外側部份 14之沖洗通道 12。晶圓支撐件可包含自內側部份對稱延伸之複數個沖洗通道。
晶圓支撐件 10可進一步包含形成於晶圓支撐件 10之外側部份 14的一或多個第一充氣部通道 15。如圖4中所指示，可將用以遞送沖洗氣體至晶圓 W的邊緣之出口 17提供在晶圓支撐件主體 11之支撐表面的凹部部份處或形成於其上。出口 17可與第一充氣部通道 15流體連通。一或多個沖洗氣體供應孔 18（例如，複數個）可形成於與晶圓支撐件主體 11之支撐表面的凹部部份對立之晶圓支撐件 10的表面上，晶圓支撐件主體支撐晶圓 W。沖洗氣體供應孔 18可與複數個沖洗通道 12及各別內側氣體供應管 32流體連通。晶圓支撐件 10可進一步包含複數個第一沖洗孔 19，其等與第一充氣部通道 15及各別沖洗通道 12流體連通。晶圓支撐件 10可包含圓柱體或盤形體，且出口 17可與晶圓支撐件 10同心。晶圓支撐件主體 11之支撐表面的凹部部份可經成形以收容晶圓 W，使得晶圓支撐件主體 11之支撐表面的凹部部份可大致呈圓形形狀。
如圖3中所示出，沖洗氣體供應孔 18可形成在與晶圓支撐件主體 11之支撐表面的凹部部份對立的表面上。沖洗氣體供應孔 18可通過一或多個環形通道 30與複數個沖洗通道 12連通。複數個沖洗通道 12可自設置在內側部份 13中之環形通道 30徑向延伸。在所繪示之實施例中，沖洗通道 12可自內側部份 13對稱延伸用於沖洗氣體之平均分配。複數個第一沖洗孔 19可設置在各別沖洗通道 12的一端，並與第一充氣部通道 15流體連通，如圖4中所示出。
圖4繪示具有單一充氣部通道（例如，第一充氣部通道 15）之基座總成。如圖4中所示出，環形脊 21可設置在晶圓支撐件主體 11的支撐表面的凹部部份上，且可與待處置的晶圓之圓周同心，並經組態以設置在待處置的晶圓 W的周部內。出口 17可沿著環形脊 21之最外周邊形成，並可圍繞環形脊 21之圓周完整地打開。晶圓支撐件主體 11之支撐表面之凹部部份的深度在環形脊 21之外徑側可比環形脊 21之內徑側更深，且朝向圓柱體之周部逐漸減小。
圖5繪示具有複數個充氣部通道（例如，第一充氣部通道 15及第二充氣部通道 16）之基座總成。第二充氣部通道 16可形成在晶圓支撐件 10之外側部份 14處，其在晶圓支撐件 10之厚度方向上定位成與第一充氣部 15垂直間隔開。第一充氣部通道 15及第二充氣部通道 16可通過複數個第二沖洗孔 20流體連通，其等可經形成通過晶圓支撐件 10之主體，如圖2及圖5所示出。第二充氣部通道 16允許氣體組合用於更佳地分配的流動，且亦可藉由出口 17提供連續流體連接至晶圓邊緣。任何數目的第一沖洗孔 19可係合適，但可較佳地具有大量的沖洗孔用於增加均勻性。充氣部 15、 16可呈至少部分環形（例如，完全環形）形狀，且可經組態以圍繞待處置晶圓 W的周邊設置。在一些實施例中，第一沖洗孔 19之數目可等於對稱沖洗通道 12之數目，且第二沖洗孔 20之數目可大於第一沖洗孔 19之數目。例如，第一沖洗孔 19之數目及對稱沖洗通道 12之數目可係6，而第二沖洗孔 20之數目之數目可係36。至少兩個沖洗氣體供應孔 18可經組態以流體連接至惰性氣體源 24。
基座總成 1可耦接至軸 31，軸包含真空管 33及一或多個內側氣體供應管 32。沖洗氣體供應孔 18可經組態以通過內側氣體供應管 32流體連接至惰性氣體源 24。惰性氣體可通過軸內之供應管 32自惰性氣體源垂直向上遞送，且通過供應孔 18至沖洗通道 12。可通過沖洗通道 12將惰性氣體側向向外遞送至複數個第一沖洗孔 19。惰性氣體可通過複數個第一沖洗孔 19供應至第一充氣部 15，且對於圖5的多個充氣部實施例，通過複數個第二沖洗孔 20遞送至第二充氣部通道 16。對於圖4之單一充氣部實施例，通道 12可藉由第一沖洗孔 19將惰性氣體傳達至第一充氣部 15。所遞送的惰性氣體可通過出口 17擴散，以遞送均勻流動至晶圓 W之邊緣。狹窄的出口設計幫助避免晶圓邊緣的稀釋。因此，所揭示實施例有益地可將惰性沖洗氣體遞送至晶圓的邊緣以沖洗晶圓 W的背側沉積物。
基座總成 1可進一步包含設置於晶圓支撐件 10之內側部份 13的一個或複數個真空卡盤凹槽 22。複數個真空卡盤凹槽 22可通過軸 31中的真空管 32與至少兩個真空卡盤孔 23流體連通，使得真空卡盤凹槽 22施加吸力至待處置晶圓 W。在其他實施例中，基座總成 1可包含靜電卡盤以支撐晶圓 W。
晶圓支撐件 10可包含具有良好可加工性、耐久性之鎳鉻鉬合金。所揭示之合金相較於基座加熱器之其他材料（諸如氮化鋁(AlN))可具有較高的每分鐘溫度升降速率，其允許出口 17的狹窄狹縫設計以遞送均勻流動至晶圓邊緣以及複數個（例如，三個）溫度控制區，亦即，內側部份、外側部份、及其等之間的部份，此允許外側部份的較佳調諧並改善晶圓內(WiW)非均勻性(NU%)。在一些實施例中，鎳鉻鉬合金可包含Hastelloy ®C22 ®材料，其由密蘇里州春田市的Central States Industrial所售。
圖6繪示基座總成1之另一實施例。除非另有註明，圖6之組件可相同於或大致上類似於圖1至圖4之相似編號的組件。在圖6中所描繪之實施例中，晶圓支撐件10可包含耦接至加熱器底座 29之蓋部份 26。如所示出，與晶圓支撐件 10之晶圓支撐件主體 11之支撐表面的凹部部份對立的蓋部份 26之表面可經組態以設置於加熱器底座 29上。加熱器底座 29可包含經組態以耦接至各別真空卡盤孔 23的一或多個真空孔 35，以及經組態以耦接至各別沖洗氣體供應孔 18的一或多個沖洗氣體孔 34。真空孔 35可經組態以與真空源 25流體連通，且沖洗氣體孔 34可經組態以流體連接至惰性氣體源 24。加熱器底座 29可包含鎳鉻鉬合金。鎳鉻鉬合金可包含Hastelloy ®C22 ®材料。以此方式，可避免從加熱器移除沉積物的昂貴且麻煩的清潔製程，且可消除晶圓加熱器無效體積的效應。蓋 26可藉由本領域中已知之任何合適方式（例如，藉由機械連接器、黏著劑等）耦接至加熱器底座 29。
圖7繪示防止反應物氣體以非均勻方式沉積至晶圓 W之邊緣上的另一實施例。在圖7中，用於處置晶圓 W之噴淋頭總成 40可設置在基材支撐件 42上方。噴淋頭總成 40可包含設置在噴淋頭總成 40之內側部份中的噴淋頭充氣部 41及形成於面向待處置晶圓 W之表面上的複數個開口 45。複數個開口 45係與噴淋頭充氣部 41流體連通，使得（多個）汽化前驅物可饋送至噴淋頭充氣部 41中並通過複數個開口 45沉積至晶圓 W上。複數個邊緣沖洗注入孔 43可提供於或形成於面向待處置晶圓 W的表面上。複數個邊緣沖洗注入孔 43可位於待處置晶圓 W的周部之外並與內側氣體源 24流體連通。在所繪示之實施例中，邊緣沖洗注入孔 43可設置在噴淋頭充氣部 41之外（且不對其暴露）。可通過邊緣沖洗分配穿孔板 44在晶圓 W的周部之外側上提供沖洗氣體，以便防止來自脫附製程的逆回擴散，其可遷移到晶圓 W的邊緣產生非均勻性問題。遞送至晶圓之邊緣的惰性沖洗氣體可有益地產生惰性氣體之幕以阻擋逆回擴散，以免暴露晶圓並充分稀釋前驅物以降低或防止背側沉積。
如圖8中所示出，複數個邊緣沖洗注入孔 43可經引導朝向外側周向側，以防止逆回擴散而無背側沉積。邊緣沖洗注入孔 43可周向向外成角度，以便產生擴散幕以防止氣體逆回擴散。進一步言，如圖9中指示，噴淋頭總成 40可包含凹部部份 46，且凹部部份 46的深度可朝向噴淋頭之外側邊緣逐漸減小。所繪示組態提供扼流圈以壓縮氣體之流線，以便使用速度來在無邊緣沖洗注入孔 43的情況下阻止逆回擴散。在噴淋頭總成 40與基材支撐件之間的間隙在噴淋頭總成 40之外側邊緣可窄於基材支撐件上方。在扼流部份處，可達成經汽化前驅物之較高速度及較低滯留時間。因此，前驅物可更快地移動，其可防止前驅物非均勻沉積至晶圓 W上。
本揭露亦關於用於在氣相反應器中使用本文中所描述之基座總成或噴淋頭總成來沖洗晶圓（諸如半導體晶圓）之邊緣的方法，氣相反應器諸如化學氣相沉積(CVD)反應器，包括電漿增強CVD (PECVD)反應器、低壓CVD (LPCVD)反應器、原子層沉積(ALD)反應器、及類似者。舉實例而言，本文中所描述之總成及組件可用在噴淋頭類型氣相反應器系統中，其中氣體大致上在向下方向上自噴淋頭並朝向基材流動。
為了本揭露之目的，本文中描述某些態樣、優點、及新式特徵。不必然可依據任何特定實施例達成所有此類優點。因此，例如，所屬技術領域具有通常知識者將認知到，可用達成如本文中所教示之一個優點或一組優點而不必然達成本文中可教示或建議之其他優點的方式來體現或實行本揭露。
除非另外具體陳述，或另外在如所使用的前後文下所理解，條件語言（諸如「可（can、could、might、或may）」)大致上係意欲傳達某些實施例包括而其他實施例不包括某些特徵、元件、及/或步驟。因此，此類條件語言大致上並非意欲暗指特徵、元件、及/或步驟以任何方式為一或多個實施例所要求，或者在有無使用者輸入或提示的情況下，一或多個實施例必然包括用於決定此等特徵、元件、及/或步驟是否包括或是否欲在任何特定實施例中進行的邏輯。
除非另外具體陳述，否則諸如短語「X、Y及Z中之至少一者」的連接語言如所使用之前後文下理解為大致上傳達一項目、項等可係X、Y或Z。因此，此類連接語言大致上並非意欲暗指某些實施例要求至少一個X、至少一個Y、以及至少一個Z的存在。
本文中所使用之程度語言（諸如如本文中所使用之用語「大約(approximately)」、「約(about)」、「大致上(generally)」、及「實質上(substantially)」代表接近所陳述的值、量、或特性之值、量、或特性，值、量、或特性仍進行所欲功能或達成所欲結果。例如，用語「大約(approximately)」、「約(about)」、「大體上(generally)」及「實質上(substantially)」可指在所述量之小於10%內、小於5%內、小於1%內、小於0.1%內及小於0.01%內的量。
本揭露的範疇並非意欲受此節或本說明書中別處之較佳實施例的特定揭露所限制，並可如此節或本說明書中別處所呈現或如未來所呈現的申請專利範圍所定義。申請專利範圍之語言應基於申請專利範圍中所採用之語言作公正解讀，且不限於本說明書中或在本申請案之審查期間所描述之實例，實例應詮釋為非排他性。
1:基座總成 10:晶圓支撐件 11:晶圓支撐件主體 12:沖洗通道 13:內側部份 14:外側部份 15:第一充氣部通道 16:第二充氣部通道 17:出口 18:氣體供應孔 19:第一沖洗孔 20:第二沖洗孔 21:環形脊 22:真空卡盤凹槽 23:真空卡盤孔 24:惰性氣體源 25:真空源 26:蓋部份 29:加熱器底座 30:環形通道 31:軸 32:氣體供應管 33:真空管 34:沖洗氣體孔 35:真空孔 40:噴淋頭總成 41:噴淋頭充氣部 42:基材支撐件 43:邊緣沖洗注入孔 44:邊緣沖洗分配穿孔板 45:開口 46:凹部部份 50:歧管 51:鑽孔 52:反應室 100:半導體處理裝置 W:基材
前述及其他目標及優點將出現於下列描述中。在描述中參照所附圖示，圖示形成本文之部分，且在圖示中藉由繪示其中可實踐所揭示實施例的具體實施例來示出。將足夠詳細地描述此等實施例，以使本領域具有通常知識者能夠實踐所揭示實施例，且應理解，可利用其他實施例並可作出結構更換而不離開所揭示實施例之範疇。因此，所附圖示僅提交作為示出所揭示實施例之較佳例示。據此，下列詳細描述不作為限制意義，且所揭示實施例的範疇係最佳地由隨附申請專利範圍來定義。 圖1係半導體處理裝置之整體系統的綜觀之示意圖。 圖2係依據一個實施例之基座總成的示意圖。 圖3係晶圓支撐件的示意圖，示出沖洗通道。 圖4係沿著圖3之線A-A所取之單一充氣部實施例的橫截面視圖。 圖5係沿著圖3之線A-A所取的雙充氣部實施例的橫截面視圖。 圖6係依據一個實施例之設置在加熱器底座的基座總成的示意圖。 圖7係根據一個實施例之具有邊緣沖洗注入孔的噴淋頭總成之示意圖。 圖8係根據一個實施例之噴淋頭總成之示意圖，噴淋頭總成具有經引導朝向外側周向側的邊緣沖洗注入孔。 圖9係根據一個實施例之無邊緣沖洗注入孔的噴淋頭總成之示意圖。
1:基座總成
10:晶圓支撐件12:沖洗通道
15:第一充氣部通道
16:第二充氣部通道
18:氣體供應孔
19:第一沖洗孔
20:第二沖洗孔
22:真空卡盤凹槽
23:真空卡盤孔
24:惰性氣體源
25:真空源
31:軸
32:氣體供應管
33:真空管
W:基材

Claims (20)

  1. 一基座總成，其包含： 一晶圓支撐件，其經組態以支撐一晶圓，該晶圓支撐件包含： 一晶圓支撐件主體，其經組態以支撐該晶圓在該晶圓支撐件主體之一支撐表面上； 一沖洗通道，其自該晶圓支撐件主體之一內側部份側向延伸至該晶圓支撐件主體之一外側部份； 一第一充氣部通道，其設置於該晶圓支撐件之該外側部份且與該沖洗通道流體連通；及 一出口，其將一沖洗氣體遞送至該晶圓之一邊緣，該出口與該第一充氣部通道流體連通。
  2. 如請求項1之基座總成，其進一步包含： 一沖洗氣體供應孔，其在與該晶圓支撐件主體之該支撐表面對立的一表面上，該沖洗氣體供應孔與該沖洗通道流體連通；及 複數個第一沖洗孔，其等提供在該第一充氣部通道與該沖洗通道之間的流體連通。
  3. 如請求項1之基座總成，其中該晶圓支撐件包含一圓柱體，且該出口與該晶圓支撐件同心。
  4. 如請求項1之基座總成，其中該晶圓支撐件包含自該內側部份對稱延伸的複數個該沖洗通道。
  5. 如請求項1之基座總成，其中該晶圓支撐件主體包含經組態以支撐該晶圓之一凹部部份，且 該出口係形成於該凹部部份上並與該第一充氣部流體連通。
  6. 如請求項5之基座總成，其中該晶圓支撐件進一步包含該凹部部份上的一環形脊，且 該環形脊與待處置的該晶圓的一圓周同心。
  7. 如請求項6之真空基座總成，其中該環形脊係經組態以設置在待處置的該晶圓之一周部內。
  8. 如請求項6之基座總成，其中該出口係沿著該環形脊之一最外周邊形成。
  9. 如請求項6之基座總成，其中該凹部部份的一深度在該環形脊之一外徑側比該環形脊之一內徑側更深，且朝向該圓柱體的一周部逐漸減小。
  10. 如請求項5之基座總成，其進一步包含： 一第二充氣部通道，其形成在該晶圓支撐件之該外側部份，該第二充氣部通道在該晶圓支撐件主體之一厚度方向上定位成與該第一充氣部垂直間隔開，及 複數個第二沖洗孔，其等提供在該第一充氣部通道與該第二充氣部通道之間的流體連通， 其中複數個第一沖洗孔與該第二充氣部通道及各別的該沖洗通道流體連通。
  11. 如請求項10之基座總成，其中該等第二沖洗孔之一數目大於該等第一沖洗孔之一數目。
  12. 如請求項2之基座總成，其中該基座總成耦接至一軸，該軸包含一真空管及一內側氣體供應管，且 複數個沖洗氣體供應孔經組態以通過該內側氣體供應管流體連接至一惰性氣體源。
  13. 如請求項12之基座總成，其進一步包含： 一真空卡盤凹槽，其設置於該晶圓支撐件之該內側部份；及 一真空卡盤孔，其通過該真空管與該真空卡盤凹槽流體連通，其中該真空卡盤孔經組態以與一真空源流體連接。
  14. 一基座總成，其包含： 一晶圓支撐件，其經組態以支撐一晶圓，其中該晶圓支撐件包含： 一晶圓支撐件主體，其經組態以支撐待處置的一晶圓； 複數個沖洗通道，其等自該晶圓支撐件主體之一內側部份側向延伸至該晶圓支撐件主體之一外側部份； 一第一充氣部通道，其設置於該晶圓支撐件之該外側部份； 一第二充氣部通道，其定位成與該第一充氣部垂直間隔開，其中該第二充氣部通道係藉由複數個第一沖洗孔與該等沖洗通道流體連通，且藉由複數個第二沖洗孔與該第一充氣部流體連通；及 一出口，其與該第一充氣部流體連通，以將一沖洗氣體遞送至該晶圓的一邊緣。
  15. 如請求項14之基座總成，其中該晶圓支撐件主體包含經組態以支撐該晶圓的一凹部部份，且 該出口係形成於該凹部部份上並與該第一充氣部流體連通。
  16. 如請求項14之基座總成，其中該基座總成耦接至一軸，該軸包含連接至一惰性氣體源之一沖洗氣體供應管。
  17. 如請求項16之基座總成，更包括： 一加熱器底座，耦接至該軸，該軸包含一或多個真空管及一或多個內側氣體供應管，且其中該加熱器底座包含： 一或多個真空孔，其經組態以耦接至該軸中的該一或多個真空管中相應的一者，及 一或多個沖洗氣體孔，其經組態以耦接至該軸中的該一或多個內側氣體供應管中相應的一者。
  18. 如請求項17之基座總成，其中該一或多個真空孔經組態以通過該一或多個真空管中相應的該者流體連接至一真空源，且 其中該一或多個沖洗氣體孔經組態以通過該一或多個內側氣體供應管中相應的該者流體連接至一內側氣體源。
  19. 一種用於處置一晶圓之噴淋頭總成，其包含： 一噴淋頭充氣部； 複數個開口，其等與該噴淋頭充氣部流體連通，該等開口經組態以傳達來自該噴淋頭充氣部的一或多個汽化前驅物並到經組態以支撐該晶圓的一晶圓支撐件上；及 複數個邊緣沖洗注入孔，其等經組態以設置於待處置的該晶圓之一周部之外，並與一沖洗氣體源流體連通，該等邊緣沖洗注入孔經配置以引導一沖洗氣體，用以防止氣體逆回擴散至該晶圓。
  20. 如請求項19之噴淋頭總成，其中該等邊緣沖洗注入孔不與該噴淋頭充氣部流體連通。
TW111149858A 2021-12-28 2022-12-26 基座總成及噴淋頭總成 TW202334495A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US202163266099P 2021-12-28 2021-12-28
US63/266,099 2021-12-28

Publications (1)

Publication Number Publication Date
TW202334495A true TW202334495A (zh) 2023-09-01

Family

ID=86897246

Family Applications (1)

Application Number Title Priority Date Filing Date
TW111149858A TW202334495A (zh) 2021-12-28 2022-12-26 基座總成及噴淋頭總成

Country Status (5)

Country Link
US (1) US20230207377A1 (zh)
JP (1) JP2023098701A (zh)
KR (1) KR20230100634A (zh)
CN (1) CN116364628A (zh)
TW (1) TW202334495A (zh)

Also Published As

Publication number Publication date
KR20230100634A (ko) 2023-07-05
US20230207377A1 (en) 2023-06-29
CN116364628A (zh) 2023-06-30
JP2023098701A (ja) 2023-07-10

Similar Documents

Publication Publication Date Title
US20200149166A1 (en) Flow control features of cvd chambers
US11932939B2 (en) Lids and lid assembly kits for atomic layer deposition chambers
JP7254762B2 (ja) 垂直炉用のライナーおよびフランジ組立品ならびにライナーおよび垂直炉
KR101474879B1 (ko) 고온 원자층 증착용 인렛 매니폴드
US8443756B2 (en) Showerhead electrodes and showerhead electrode assemblies having low-particle performance for semiconductor material processing apparatuses
TW201841208A (zh) 基板處理設備
US11420217B2 (en) Showerhead for ALD precursor delivery
US20080072821A1 (en) Small volume symmetric flow single wafer ald apparatus
TWI801413B (zh) 具有加熱的噴淋頭組件之基板處理腔室
KR20010052904A (ko) 이중 채널식 가스 분배 판
US20120135609A1 (en) Apparatus and Process for Atomic Layer Deposition
TWI803753B (zh) 具有背側泵送的熱處理腔室蓋
US20190048467A1 (en) Showerhead and process chamber incorporating same
TW202334495A (zh) 基座總成及噴淋頭總成
TW202410157A (zh) 雙通道噴淋頭組件
US11421322B2 (en) Blocker plate for use in a substrate process chamber
US20240254629A1 (en) Semiconductor processing device with edge purging