TW202330226A - Wire cutting equipment and wire cutting method - Google Patents
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 68
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 68
- 239000010703 silicon Substances 0.000 claims abstract description 68
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Abstract
Description
本發明實施例屬於晶圓加工技術領域,尤其關於線切割設備和線切割方法。Embodiments of the present invention belong to the technical field of wafer processing, and in particular relate to wire cutting equipment and wire cutting methods.
矽片作為半導體電路製程載體,其品質對積體電路形成具有決定性的影響。目前,在矽片的初步成型過程中的主要步驟包括:矽棒切割,物理、化學研磨,化學刻蝕,物理化學拋光等。矽棒切割是矽片成型技術中的核心技術之一,其主要包括多線砂漿(SiC)切割和內圓切割。目前採用的主流技術為多線切割,因為相對於內圓切割,多線切割具有效率高、品質好、出片率高等優勢。As the carrier of semiconductor circuit manufacturing process, the quality of silicon wafer has a decisive influence on the formation of integrated circuits. At present, the main steps in the preliminary molding process of silicon wafers include: silicon rod cutting, physical and chemical grinding, chemical etching, physical and chemical polishing, etc. Silicon rod cutting is one of the core technologies in silicon wafer forming technology, which mainly includes multi-line mortar (SiC) cutting and inner circle cutting. The mainstream technology currently used is multi-wire cutting, because compared with inner circle cutting, multi-wire cutting has the advantages of high efficiency, good quality, and high production rate.
多線切割是目前先進的切片加工技術,其原理是將切割線依次纏繞在彼此間隔開地形成於線軸的周向表面上的導引槽內以使切割線形成切割線段陣列,在導引槽的導引作用下,利用切割線的高速往復運動把磨料帶入待切割材料(比如矽棒)的加工區域進行研磨,而待切割工件通過工作臺的升降實現垂直方向的進給,以此將工件同時切割成若干個所需尺寸形狀的薄片(比如晶圓)。通常多線切割過程中所採用的磨料可選為砂漿。Multi-wire cutting is the current advanced slicing processing technology. Its principle is to wind the cutting wires in turn in the guide grooves formed on the circumferential surface of the bobbin at intervals so that the cutting wires form an array of cutting line segments. Under the guidance of the cutting line, the abrasive material is brought into the processing area of the material to be cut (such as silicon rod) for grinding by using the high-speed reciprocating motion of the cutting line, and the workpiece to be cut is fed in the vertical direction through the lifting of the worktable, so that the The workpiece is simultaneously cut into several thin slices (such as wafers) of the desired size and shape. Usually the abrasive used in the multi-wire cutting process can be selected as mortar.
目前,在切割過程中,由於切割線沿其延伸方向以高速進給,隨著切割線不斷切入矽棒,切割線與矽棒之間的摩擦會產生大量的熱,如果這些熱不能被及時帶走將會對切割出的矽片的平坦度造成不利影響,而且隨著切割進程的繼續,切割線帶砂能力會降低,實際上能夠被切割線帶至切割位置的砂漿的量可能低於預期,這對切割效率也造成了負面影響。At present, during the cutting process, since the cutting wire is fed at high speed along its extension direction, as the cutting wire continuously cuts into the silicon rod, the friction between the cutting wire and the silicon rod will generate a lot of heat. If the heat cannot be taken away in time Walking will have an adverse effect on the flatness of the cut silicon wafer, and as the cutting process continues, the ability of the cutting line to carry sand will decrease, and the amount of mortar that can actually be carried by the cutting line to the cutting position may be lower than expected , which also has a negative impact on cutting efficiency.
有鑑於此,本發明實施例期望提供線切割設備和線切割方法;能夠減少溫度對切割出的矽片的平坦度影響並且提高切割效率。In view of this, the embodiment of the present invention expects to provide a wire cutting device and a wire cutting method, which can reduce the influence of temperature on the flatness of cut silicon wafers and improve cutting efficiency.
本發明實施例的技術方案是這樣實現的: 第一方面,本發明實施例提供了一種線切割設備,該線切割設備包括: 承載模組,該承載模組用於承載矽棒在進給方向上進行運動; 切割模組,該切割模組包括切割線和切割線驅動單元,該切割線驅動單元設置成驅動該切割線運動以對該矽棒進行切割; 第一砂漿供給模組,該第一砂漿供給模組設置成能夠始終向該切割線切割該矽棒的切割位置噴射砂漿。 The technical scheme of the embodiment of the present invention is realized like this: In a first aspect, an embodiment of the present invention provides a wire cutting device, which includes: A carrying module, the carrying module is used to carry the movement of the silicon rod in the feeding direction; A cutting module, the cutting module includes a cutting wire and a cutting wire driving unit, the cutting wire driving unit is configured to drive the cutting wire to move so as to cut the silicon rod; A first mortar supply module, the first mortar supply module is configured to always spray mortar to the cutting position where the silicon rod is cut by the cutting line.
第二方面,本發明實施例提供了一種線切割方法,該線切割方法通過使用根據第一方面的線切割設備執行。In a second aspect, an embodiment of the present invention provides a wire cutting method, which is performed by using the wire cutting device according to the first aspect.
本發明實施例提供了線切割設備和線切割方法;該線切割設備包括能夠始終向切割線切割矽棒的切割位置噴射砂漿的第一砂漿供給模組,通過由第一砂漿供給模組直接將砂漿噴射至切割位置,可以利用砂漿帶走切割位置處由於切割線與矽棒的摩擦產生的熱,並且可以使更多的砂漿參與切割操作,從而提高切割效率。Embodiments of the present invention provide a wire cutting device and a wire cutting method; the wire cutting device includes a first mortar supply module that can always spray mortar to the cutting position where the wire cuts the silicon rod, and the first mortar supply module directly sends The mortar is sprayed to the cutting position, and the heat generated by the friction between the cutting line and the silicon rod can be taken away by the mortar, and more mortar can be involved in the cutting operation, thereby improving the cutting efficiency.
通過以下結合附圖對本發明的示例性實施方式的詳細說明,本發明的上述特徵和優點以及其他特徵和優點將更加清楚。The above-mentioned features and advantages and other features and advantages of the present invention will be more apparent through the following detailed description of exemplary embodiments of the present invention in conjunction with the accompanying drawings.
為了使本發明的目的、技術方案及優點更加清楚明白,下面結合附圖及實施例,對本發明進行進一步詳細說明。應當理解,此處所描述的具體實施例僅用以解釋本發明,但並不用於限定本發明。In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, but not to limit the present invention.
為使本發明實施例的目的、技術方案和優點更加清楚,下面將結合本發明實施例中的附圖,對本發明實施例中的技術方案進行清楚、完整地描述,顯然,所描述的實施例僅僅是本發明一部分實施例,而不是全部的實施例。基於本發明中的實施例,本領域之具有通常知識者在沒有作出進步性改良前提下所獲得的所有其他實施例,都屬於本發明保護的範圍。In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is only some embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without progressive improvements fall within the protection scope of the present invention.
另外需要說明的是:本發明實施例中術語“第一”、“第二”等是用於區別類似的物件,而不用於描述特定的順序或先後次序。應該理解這樣使用的術語在適當情況下可以互換,以便本發明的實施例能夠以除了在這裡圖示或描述的那些以外的順序實施,且“第一”、“第二”所區別的對象通常為一類,並不限定物件的個數,例如第一物件可以是一個,也可以是多個。In addition, it should be noted that the terms “first” and “second” in the embodiments of the present invention are used to distinguish similar items, and are not used to describe a specific order or sequence. It is to be understood that the terms so used are interchangeable under appropriate circumstances such that the embodiments of the invention are capable of practice in sequences other than those illustrated or described herein and that what is distinguished by "first" and "second" are generally As a category, the number of objects is not limited. For example, there may be one or more first objects.
本技術領域之具有通常知識者可以理解,除非特意聲明,這裡使用的單數形式“一”、“一個”、“所述”和“該”也可包括複數形式。應該進一步理解的是,本發明的說明書中使用的措辭“包括”是指存在所述特徵、整數、步驟、操作、元件和/或元件,但是並不排除存在或添加一個或多個其他特徵、整數、步驟、操作、元件、元件和/或它們的組。應該理解,當我們稱元件被“連接”或“耦接”到另一元件時,它可以直接連接或耦接到其他元件,或者也可以存在中間元件。此外,這裡使用的“連接”或“耦接”可以包括無線連接或無線耦接。這裡使用的措辭“和/或”包括一個或更多個相關聯的列出項的全部或任一單元和全部組合。Those skilled in the art will understand that the singular forms "a", "an", "said" and "the" used herein may also include plural forms unless otherwise specified. It should be further understood that the word "comprising" used in the description of the present invention refers to the presence of the stated features, integers, steps, operations, elements and/or components, but does not exclude the presence or addition of one or more other features, Integers, steps, operations, elements, components, and/or groups thereof. It will be understood that when an element is referred to as being "connected" or "coupled" to another element, it can be directly connected or coupled to the other element or intervening elements may also be present. Additionally, "connected" or "coupled" as used herein may include wireless connection or wireless coupling. The expression "and/or" used herein includes all or any elements and all combinations of one or more associated listed items.
本發明實施例中術語“和/或”,描述關聯物件的關聯關係,表示可以存在三種關係,例如,A和/或B,可以表示:單獨存在A,同時存在A和B,單獨存在B這三種情況。字元“/”一般表示前後關聯物件是一種“或”的關係。The term "and/or" in the embodiment of the present invention describes the relationship between associated objects, indicating that there may be three relationships, for example, A and/or B, which may mean: A exists alone, A and B exist simultaneously, and B exists alone. three conditions. The character "/" generally indicates that the contextual objects are an "or" relationship.
本發明實施例中術語“多個”是指兩個或兩個以上,其它量詞與之類似。The term "plurality" in the embodiments of the present invention refers to two or more, and other quantifiers are similar.
本發明中的“基於A確定B”表示確定B時要考慮A這個因素。並不限於“只基於A就可以確定出B”,還應包括:“基於A和C確定B”、“基於A、C和E確定B”、基於“A確定C,基於C進一步確定B”等。另外還可以包括將A作為確定B的條件,例如,“當A滿足第一條件時,使用第一方法確定B”;再例如,“當A滿足第二條件時,確定B”等;再例如,“當A滿足第三條件時,基於第一參數確定B”等。當然也可以是將A作為確定B的因素的條件,例如,“當A滿足第一條件時,使用第一方法確定C,並進一步基於C確定B”等。"Determine B based on A" in the present invention means that the factor A should be considered when determining B. It is not limited to "B can be determined only based on A", but also includes: "Determine B based on A and C", "Determine B based on A, C and E", "determine C based on A, further determine B based on C" wait. In addition, it may also include A as the condition for determining B, for example, "when A meets the first condition, use the first method to determine B"; another example, "when A meets the second condition, determine B"; another example , "when A satisfies the third condition, determine B based on the first parameter" and so on. Of course, it may also be a condition that takes A as a factor for determining B, for example, "when A satisfies the first condition, use the first method to determine C, and further determine B based on C" and so on.
參見圖1,其示出了一種相關技術中的線切割設備1的示意圖,可以理解地,圖1所示結構僅用於進行原理性說明,並不表示本領域之具有通常知識者不會根據具體的實施狀態在圖1所示的組成結構上增加或減少元件,本發明實施例對此不做具體限制。由圖1所示,線切割設備1可以包括線切割單元11和承載單元12;線切割單元11可以在一些示例中如圖1所示置於承載單元12的垂直方向下方,也可以在一些示例中如圖2所示置於承載單元12的垂直方向上方。具體而言,線切割單元11可以包括多個線軸111以及切割線112,切割線112纏繞於線軸111上以形成由相互平行的切割線段構成的陣列;在圖1中,線軸111的數量以2個為例進行說明,並且線軸111和切割線112朝向和遠離承載單元12的往復運動方向如圖1中的實線箭頭所示,往復運動速度示例性地可以為10m/s至15m/s。承載單元12用於裝載並固定待加工矽棒2,在圖1和圖2所示的示例中,承載單元12可以包括基台121以及仲介軟體122,仲介軟體122可以將待加工矽棒2固定至基台121,例如待加工矽棒可以通過其周向表面利用樹脂黏接至基台的下表面(圖1)或上表面(圖2)從而固定至基台。Referring to FIG. 1, it shows a schematic diagram of a
對於圖1和圖2中所示的線切割設備1,可以通過移動線切割單元11或者承載單元12以使切割線112與待加工矽棒2之間沿垂直方向的相向運動,待切割線112與待加工矽棒2相互接觸之後,利用切割線112沿其延伸方向的運動實現對待加工矽棒2的切割。在如圖1所示的示例中,可以將線切割單元11沿黑色箭頭所示方向移動,也可以將承載單元12沿虛線白色箭頭方向移動,以實現切割線112與待加工矽棒2之間沿垂直方向的相向運動。在如圖2所示的示例中,可以將承載單元12沿黑色箭頭所示方向移動,也可以將線切割單元11沿虛線白色箭頭方向移動,以實現切割線112與待加工矽棒2之間沿垂直方向的相向運動。需要說明的是,本發明實施例通過加裝升降裝置(圖中未示出)以實現線切割單元11或者承載單元12的移動,可以理解地,本領域之具有通常知識者還可以根據實際需要及實施場景通過其他方式實現線切割單元11或者承載單元12的移動,本發明實施例對此不做贅述。For the
在相關方案中,線軸111上設置有用於導引切割線112的多個導引槽,切割線112依次纏繞在每個線軸111的每個導引槽內,使得切割線112形成為由多個切割線段組成的陣列,在該陣列中,各切割線段彼此平行以期將矽棒一次性切割成多個矽片。在切割操作的開始階段,線上切割單元11和承載單元12朝向彼此運動之前,線切割單元11首先被啟動運行,使得切割線繞線軸111進行高速往復運動,同時通過砂漿噴管向切割線噴淋切割砂漿,該過程被稱為“預熱過程”,通常,切割線的兩端分別纏繞在放線輪和收線輪上並且切割線的往復運動由放線輪和收線輪配合驅動。一旦切割線的往復運動平穩並且切割線已經被均勻噴淋砂漿之後,預熱過程結束。然後,在切割線繼續進行高速往復運動的同時使線切割單元11和承載單元12朝向彼此運動以進行切割操作。In a related solution, the
在使用相關技術中的線切割設備的切割過程中,由於切割線以高速進行往復運動,因此在與矽棒摩擦時會迅速產生大量的熱,隨著切割位置的不斷深入,這些熱愈來愈多地積聚在正在被切割的矽棒內部,並且在整個切割過程持續對矽棒造成影響直至切割過程結束,最終導致剛剛被切割出的矽片受這部分熱的影響而具有不佳的平坦度。另外,隨著切割進程的繼續,切割產生的矽渣可能堆積在矽棒上的切割位置附近,晶棒對切割位置的擠壓也會隨切割深度的增加而增大,切割線因磨損帶砂能力不斷降低,這些因素會導致切割線無法將充足的砂漿攜帶至切割位置處,從而使切割能力下降,整體切割效率降低。In the cutting process using the wire cutting equipment in the related art, because the cutting wire reciprocates at high speed, it will quickly generate a large amount of heat when it rubs against the silicon rod. As the cutting position continues to deepen, these heats become more and more A lot of it accumulates inside the silicon rod being cut, and continues to affect the silicon rod throughout the cutting process until the end of the cutting process, eventually resulting in poor flatness of the silicon wafer that has just been cut out due to the influence of this part of the heat . In addition, as the cutting process continues, the silicon slag generated by the cutting may accumulate near the cutting position on the silicon rod, and the extrusion of the crystal rod to the cutting position will also increase with the increase of the cutting depth, and the cutting line will be sandy due to wear. These factors result in the cutting wire not being able to carry sufficient mortar to the cutting position, resulting in reduced cutting capacity and overall cutting efficiency.
鑒於上述情況,本發明實施例期望提供線切割設備和線切割方法;能夠減少溫度對切割出的矽片的平坦度影響並且提高切割效率。In view of the above situation, the embodiment of the present invention expects to provide a wire cutting device and a wire cutting method; which can reduce the influence of temperature on the flatness of cut silicon wafers and improve cutting efficiency.
基於此,參見圖3,其示出了本發明實施提供的一種線切割設備200,該線切割設備200包括:承載模組201,該承載模組201用於承載矽棒S在進給方向上進行運動;切割模組202,該切割模組202包括切割線2021和切割線驅動單元2022,該切割線驅動單元2022設置成驅動該切割線2021運動以對該矽棒S進行切割;第一砂漿供給模組203,該第一砂漿供給模組203設置成能夠始終向該切割線2021切割該矽棒S的切割位置噴射砂漿。Based on this, referring to Fig. 3, it shows a kind of
如圖3所示,線切割設備200包括承載模組201、切割模組202和第一砂漿供給模組203,承載模組201承載矽棒S並且能夠驅動矽棒S沿朝向切割模組202的進給方向運動,於此同時,切割模組202的切割線驅動單元2022使切割線2021在切割線的延伸方向上進行運動,例如進行往復運動,以在與矽棒S接觸時對矽棒S進行切割,在圖3中,切割線驅動單元2022為收線輪和放線輪,在切割過程中,第一砂漿供給模組203始終向切割線2021切割矽棒S的切割位置噴射砂漿,也就是說,向正在執行切割操作的切割線部段和正在被切割的矽棒部分二者噴射砂漿,以使砂漿直達切割位置參與切割操作,提高切割效率,而且參與過切割操作的砂漿會通過重力流動離開矽棒和切割線,從而帶走切割操作產生的一部分熱,減少熱在矽棒處的積聚。As shown in Figure 3, the
本發明實施例提供了一種線切割設備200;該線切割設備200包括能夠始終向切割線2021切割矽棒S的切割位置噴射砂漿的第一砂漿供給模組203,通過由第一砂漿供給模組203直接將砂漿噴射至切割位置,可以利用砂漿帶走切割位置處由於切割線2021與矽棒S的摩擦產生的熱,並且可以使更多的砂漿參與切割操作,從而提高切割效率。The embodiment of the present invention provides a kind of
當承載模組201驅動矽棒S沿垂直方向向下朝向切割線2021進給時,切割線2021向從矽棒S的下方開始進行切割,對此,參見圖3,可選地,該第一砂漿供給模組203設置在該矽棒和該切割線2021的下方並且包括朝向上方噴射砂漿的噴嘴2031,也就是說,第一砂漿供給模組203通過噴嘴2031從矽棒和正在執行切割操作的切割線部段的下方向上噴射砂漿,這種設置可使砂漿以較短的路徑直達切割位置處,不僅僅是在切割初始階段,在切割進程的任何階段,噴嘴2031都可以將砂漿從即將被切割成型的相鄰矽片之間送達切割位置,具有較好的噴射效率。可選地,該第一砂漿供給模組203設置在該矽棒和該切割線2021的正下方。When the carrying
為了使足夠的砂漿能夠參與切割操作,可選地,該噴嘴2031設置成使得噴射出的砂漿始終能夠覆蓋該切割位置,具體而言,噴嘴2031設置成不僅僅是對正在執行切割操作的切割線部段和正在被切割的矽棒部分上的某個點或某個區域噴射砂漿,而是使砂漿能夠覆蓋上述切割線部段和矽棒部分,以確保充分的切割能力。In order to enable enough mortar to participate in the cutting operation, optionally, the
在切割過程中,切割線2021切割矽棒的切割位置始終隨著切割進程而變化,繼續以矽棒S沿垂直方向向下朝向切割線2021進給的情況為例,切割位置從矽棒的下邊緣逐漸深入,切割位置的長度則是按照先變長再變短的方式變化,為了能夠根據切割位置的變化適應性地提供砂漿,可選地,參見圖4和圖5,該線切割設備200還包括控制器204,該控制器204用於根據該切割位置的變化控制該噴嘴2031的壓力和噴射範圍變化,具體而言,當切割位置距噴嘴2031較近時,可以使噴嘴2031以較低的壓力噴射砂漿,並且隨著切割位置逐漸遠離噴嘴2031,逐漸升高噴嘴2031的噴射壓力;當切割位置較短時,例如在切割初始階段和末尾階段,可以使噴嘴2031的擴散角θ較小,參見圖5,而在切割位置較長時,例如在切割至矽棒的直徑位置處時,則需要擴大噴嘴2031的擴散角,以使得在整個切割過程中,砂漿始終能夠覆蓋切割位置,由此不僅可以精準地將砂漿送達切割位置,而且合理地使用砂漿的量,避免了砂漿浪費或砂漿不足的情況發生。During the cutting process, the cutting position where the
為了實現多線切割,參見圖3,該線切割設備200還包括線軸205,該線軸205的周向表面上形成有沿著該線軸205的周向方向延伸的多個導引槽2051,該切割線2021纏繞在該線軸205的該多個導引槽2051內以形成由彼此平行的多個切割線段SE組成的陣列。In order to realize multi-wire cutting, referring to FIG. 3 , the
針對多線切割的情況,為了向每個切割線段SE對應的切割位置都提供充分的砂漿,可選地,參見圖3,該第一砂漿供給模組203包括沿該矽棒的軸向方向排列的多個該噴嘴2031,以使得噴射出的砂漿能夠覆蓋每個切割線段SE切割該矽棒的切割位置,作為示例而非限制性地,噴嘴2031的數目可以與切割線段SE的數目相同或者大於切割線段SE的數目,並且各個噴嘴2031的位置設置成與各個切割位置相對應,比如與纏繞線上軸205上的各個切割線段SE相對應,由此針對一個切割線段SE可以由一個或更多個噴嘴2031噴射砂漿,避免砂漿在噴射路徑上被阻擋而無法到達切割位置的情況發生。For the situation of multi-wire cutting, in order to provide sufficient mortar to the cutting position corresponding to each cutting line segment SE, optionally, referring to FIG. 3 , the first
為了確保充足的砂漿能夠參與切割操作,可選地,參見圖6,該線切割設備200還包括第二砂漿供給模組206,該第二砂漿供給模組206設置成向該線軸205的纏繞有該切割線的部分噴淋砂漿。可選地,該第二砂漿供給模組206沿該線軸205的軸向方向設置在該線軸205和該切割線2021的上方。In order to ensure that sufficient mortar can participate in the cutting operation, optionally, referring to FIG. Part of the cutting line is sprayed with mortar. Optionally, the second mortar supply module 206 is disposed above the spool 205 and the
如圖6中所示,在兩個線軸205的上方分別設置有一個沿線軸205的軸向方向佈置的第二砂漿供給模組206,第二砂漿供給模組206大致呈長方體形狀,其長度大於線軸205的纏繞有切割線的部分的長度並且設有向下敞開的噴淋口(圖中未示出),使得能夠對位於下方的線軸205和線軸205上的每個切割線段SE的一部分噴淋砂漿,借助於線軸205,砂漿能夠在切割線段SE上停留一段時間,使得砂漿能夠與切割線段SE充分接觸,從而更有利於切割線段SE攜帶更多的砂漿到達切割位置,以參與切割操作。As shown in Fig. 6, a second mortar supply module 206 arranged along the axial direction of the bobbin 205 is respectively provided above the two spools 205, the second mortar supply module 206 is roughly in the shape of a cuboid, and its length is greater than The length of the portion of the bobbin 205 that is wound with the cutting wire and is provided with a downwardly open spray port (not shown), so that a part of the bobbin 205 positioned below and each cutting wire segment SE on the bobbin 205 can be sprayed. Spraying mortar, by means of the spool 205, the mortar can stay on the cutting line segment SE for a period of time, so that the mortar can fully contact the cutting line segment SE, which is more conducive to the cutting line segment SE carrying more mortar to the cutting position to participate in the cutting operation.
線上切割領域,砂漿是能夠循環利用的,對此,可選地,該第一砂漿供給模組203還包括砂漿回收部,該砂漿回收部用於回收噴射出的砂漿以進行循環利用,具體而言,在第一砂漿供給模組203設置在矽棒下方的情況下,由噴嘴2031噴射出的砂漿無論是否已經參與了切割操作都會由於重力回落至第一砂漿供給模組203,如圖7所示,第一砂漿供給模組203包括位於底部的收集部2032以及與收集部2032連通的回收口2033,收集部2032呈弧形板狀,用於收集噴射出的砂漿並且能夠將收集的砂漿引流至回收口2033,流入回收口2033的砂漿經過過濾、性能調節等處理後便可用於後續的切割操作,由此可以降低線切割操作的成本。In the field of online cutting, mortar can be recycled. For this, optionally, the first
本發明實施例還提供了一種線切割方法,該線切割方法通過使用本發明所描述的線切割設備200執行。The embodiment of the present invention also provides a wire cutting method, which is executed by using the
需要說明,本說明書中的各個實施例均採用遞進的方式描述,各個實施例之間相同相似的部分互相參見即可,每個實施例重點說明的都是與其他實施例的不同之處。尤其,對於實施例而言,由於其基本相似於產品實施例,所以描述得比較簡單,相關之處參見產品實施例的部分說明即可。It should be noted that each embodiment in this specification is described in a progressive manner, the same and similar parts of each embodiment can be referred to each other, and each embodiment focuses on the differences from other embodiments. In particular, as for the embodiment, since it is basically similar to the product embodiment, the description is relatively simple, and for related parts, please refer to the description of the product embodiment.
在上述實施方式的描述中,具體特徵、結構、材料或者特點可以在任何的一個或多個實施例或示例中以合適的方式結合。In the description of the above embodiments, specific features, structures, materials or characteristics may be combined in any one or more embodiments or examples in an appropriate manner.
顯然,本領域的具有通常知識者可以對本發明進行各種改動和變型而不脫離本發明的精神和範圍。這樣,倘若本發明的這些修改和變型屬本發明申請專利範圍及其等同技術的範圍之內,則本發明也意圖包含這些改動和變型在內。It is obvious that those skilled in the art can make various changes and modifications to the present invention without departing from the spirit and scope of the present invention. Thus, if these modifications and variations of the present invention fall within the patent scope of the present invention and the scope of equivalent technologies, the present invention is also intended to include these modifications and variations.
1:線切割設備 11:線切割單元 111:線軸 112:切割線 12:承載單元 121:基台 122:仲介軟體 2:待加工矽棒 200:線切割設備 201:承載模組 202:切割模組 2021:切割線 2022:切割線驅動單元 203:第一砂漿供給模組 2031:噴嘴 2032:收集部 2033:回收口 204:控制器 205:線軸 2051:導引槽 206:第二砂漿供給模組 S:矽棒 SE:切割線段 θ:擴散角 1: Wire cutting equipment 11: Wire cutting unit 111: Spool 112: cutting line 12: Bearing unit 121: Abutment 122: Intermediary software 2: Silicon rod to be processed 200: wire cutting equipment 201: carrying module 202: Cutting module 2021: Cutting Lines 2022: Cutting wire drive unit 203: The first mortar supply module 2031: nozzle 2032: Collection Department 2033: Recovery port 204: Controller 205: Spool 2051: guide groove 206: The second mortar supply module S: silicon rod SE: cut line segment θ: Diffusion angle
圖1為一種相關技術中的線切割設備的示意圖; 圖2為另一種相關技術中的線切割設備的示意圖; 圖3為本發明實施例提供的線切割設備的示意圖; 圖4為本發明的另一實施例提供的線切割設備的示意圖; 圖5為本發明的又一實施例提供的線切割設備的示意圖; 圖6為本發明的再一實施例提供的線切割設備的示意圖; 圖7為本發明實施例提供的第一砂漿供給模組的結構示意圖。 Fig. 1 is a schematic diagram of a wire cutting device in the related art; Fig. 2 is the schematic diagram of the wire cutting equipment in another kind of related art; 3 is a schematic diagram of a wire cutting device provided by an embodiment of the present invention; 4 is a schematic diagram of a wire cutting device provided by another embodiment of the present invention; 5 is a schematic diagram of a wire cutting device provided by another embodiment of the present invention; 6 is a schematic diagram of a wire cutting device provided by another embodiment of the present invention; Fig. 7 is a schematic structural diagram of a first mortar supply module provided by an embodiment of the present invention.
200:線切割設備 200: wire cutting equipment
201:承載模組 201: carrying module
202:切割模組 202: Cutting module
2021:切割線 2021: Cutting Lines
2022:切割線驅動單元 2022: Cutting wire drive unit
203:第一砂漿供給模組 203: The first mortar supply module
2031:噴嘴 2031: nozzle
205:線軸 205: Spool
2051:導引槽 2051: guide groove
S:矽棒 S: silicon rod
SE:切割線段 SE: cut line segment
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