TW202329333A - 半導體裝置、半導體裝置的製造方法 - Google Patents

半導體裝置、半導體裝置的製造方法 Download PDF

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TW202329333A
TW202329333A TW111143756A TW111143756A TW202329333A TW 202329333 A TW202329333 A TW 202329333A TW 111143756 A TW111143756 A TW 111143756A TW 111143756 A TW111143756 A TW 111143756A TW 202329333 A TW202329333 A TW 202329333A
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Taiwan
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insulator
conductor
oxide
region
oxygen
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TW111143756A
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Chinese (zh)
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方堂涼太
齋藤暁
國武寛司
山崎舜平
弘
濱田俊樹
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日商半導體能源研究所股份有限公司
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Publication of TW202329333A publication Critical patent/TW202329333A/zh

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    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
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    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
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  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
TW111143756A 2021-11-30 2022-11-16 半導體裝置、半導體裝置的製造方法 TW202329333A (zh)

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JP2021-194809 2021-11-30
JP2021194809 2021-11-30
JP2022-030009 2022-02-28
JP2022030009 2022-02-28
JP2022080079 2022-05-16
JP2022-080079 2022-05-16

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TW202329333A true TW202329333A (zh) 2023-07-16

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US (1) US20250048676A1 (https=)
JP (1) JPWO2023100013A1 (https=)
KR (1) KR20240116754A (https=)
TW (1) TW202329333A (https=)
WO (1) WO2023100013A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI871138B (zh) * 2023-12-18 2025-01-21 國立清華大學 半導體功率元件
TWI918028B (zh) 2024-05-30 2026-03-11 台灣積體電路製造股份有限公司 電晶體結構和用於形成其的方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12581747B2 (en) * 2022-06-20 2026-03-17 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102265405B (zh) * 2008-12-24 2015-09-23 3M创新有限公司 金属氧化物半导体薄膜晶体管中的稳定性增强
KR101870119B1 (ko) 2009-12-25 2018-06-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN107947763B (zh) 2010-08-06 2021-12-28 株式会社半导体能源研究所 半导体集成电路
US10056497B2 (en) * 2015-04-15 2018-08-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US12142693B2 (en) * 2019-09-20 2024-11-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP7594550B2 (ja) * 2020-01-16 2024-12-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN115244713A (zh) * 2020-03-31 2022-10-25 株式会社半导体能源研究所 半导体装置、半导体装置的制造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI871138B (zh) * 2023-12-18 2025-01-21 國立清華大學 半導體功率元件
TWI918028B (zh) 2024-05-30 2026-03-11 台灣積體電路製造股份有限公司 電晶體結構和用於形成其的方法

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US20250048676A1 (en) 2025-02-06
KR20240116754A (ko) 2024-07-30
WO2023100013A1 (ja) 2023-06-08

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