TW202328358A - 用於從一基材移除光阻劑及蝕刻殘留物之具有銅腐蝕抑制劑的組合物及其用途 - Google Patents

用於從一基材移除光阻劑及蝕刻殘留物之具有銅腐蝕抑制劑的組合物及其用途 Download PDF

Info

Publication number
TW202328358A
TW202328358A TW111146108A TW111146108A TW202328358A TW 202328358 A TW202328358 A TW 202328358A TW 111146108 A TW111146108 A TW 111146108A TW 111146108 A TW111146108 A TW 111146108A TW 202328358 A TW202328358 A TW 202328358A
Authority
TW
Taiwan
Prior art keywords
weight
etch residue
photoresist stripper
residue remover
remover solution
Prior art date
Application number
TW111146108A
Other languages
English (en)
Chinese (zh)
Inventor
遠美 曹
莉莉 王
來生 孫
愛萍 吳
Original Assignee
美商慧盛材料美國責任有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商慧盛材料美國責任有限公司 filed Critical 美商慧盛材料美國責任有限公司
Publication of TW202328358A publication Critical patent/TW202328358A/zh

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor
    • G03F7/422Stripping or agents therefor using liquids only
    • G03F7/425Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22Organic compounds
    • C11D7/32Organic compounds containing nitrogen
    • C11D7/3281Heterocyclic compounds
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04Cleaning involving contact with liquid
    • B08B3/08Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02Inorganic compounds
    • C11D7/04Water-soluble compounds
    • C11D7/06Hydroxides
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22Organic compounds
    • C11D7/26Organic compounds containing oxygen
    • C11D7/261Alcohols; Phenols
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22Organic compounds
    • C11D7/32Organic compounds containing nitrogen
    • C11D7/3209Amines or imines with one to four nitrogen atoms; Quaternized amines
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22Organic compounds
    • C11D7/32Organic compounds containing nitrogen
    • C11D7/3218Alkanolamines or alkanolimines
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50Solvents
    • C11D7/5004Organic solvents
    • C11D7/5009Organic solvents containing phosphorus, sulfur or silicon, e.g. dimethylsulfoxide
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50Solvents
    • C11D7/5004Organic solvents
    • C11D7/5022Organic solvents containing oxygen
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor
    • G03F7/422Stripping or agents therefor using liquids only
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor
    • G03F7/422Stripping or agents therefor using liquids only
    • G03F7/426Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Emergency Medicine (AREA)
  • Health & Medical Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Detergent Compositions (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
TW111146108A 2021-12-15 2022-12-01 用於從一基材移除光阻劑及蝕刻殘留物之具有銅腐蝕抑制劑的組合物及其用途 TW202328358A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US202163265439P 2021-12-15 2021-12-15
US63/265,439 2021-12-15

Publications (1)

Publication Number Publication Date
TW202328358A true TW202328358A (zh) 2023-07-16

Family

ID=84981781

Family Applications (1)

Application Number Title Priority Date Filing Date
TW111146108A TW202328358A (zh) 2021-12-15 2022-12-01 用於從一基材移除光阻劑及蝕刻殘留物之具有銅腐蝕抑制劑的組合物及其用途

Country Status (7)

Country Link
US (1) US20250002823A1 (https=)
EP (1) EP4416555A1 (https=)
JP (1) JP2024545240A (https=)
KR (1) KR20240121812A (https=)
CN (1) CN118401902A (https=)
TW (1) TW202328358A (https=)
WO (1) WO2023114638A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI885437B (zh) * 2023-08-01 2025-06-01 新應材股份有限公司 剝離劑組成物以及剝離光阻的方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003213463A (ja) 2002-01-17 2003-07-30 Sumitomo Chem Co Ltd 金属腐食防止剤および洗浄液
US20060154186A1 (en) * 2005-01-07 2006-07-13 Advanced Technology Materials, Inc. Composition useful for removal of post-etch photoresist and bottom anti-reflection coatings
JP6813596B2 (ja) * 2016-05-23 2021-01-13 フジフイルム エレクトロニック マテリアルズ ユー.エス.エー., インコーポレイテッド 半導体基板からフォトレジストを除去するための剥離組成物

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI885437B (zh) * 2023-08-01 2025-06-01 新應材股份有限公司 剝離劑組成物以及剝離光阻的方法

Also Published As

Publication number Publication date
CN118401902A (zh) 2024-07-26
US20250002823A1 (en) 2025-01-02
KR20240121812A (ko) 2024-08-09
EP4416555A1 (en) 2024-08-21
JP2024545240A (ja) 2024-12-05
WO2023114638A1 (en) 2023-06-22

Similar Documents

Publication Publication Date Title
CN115428169B (zh) 用于电子产品的表面活性剂
KR101131228B1 (ko) CoWP 및 다공성 유전체를 위한 습식 세정 조성물
CN100442449C (zh) 半导体工艺中后蚀刻残留物的去除
US7393819B2 (en) Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility
US20030228990A1 (en) Semiconductor process residue removal composition and process
JP2018093225A (ja) 窒化チタンハードマスク及びエッチ残留物除去
KR20160075577A (ko) 표면 잔류물 제거용 세정 제형
EP1520211A2 (en) Microelectronic cleaning compositions containing oxidizers and organic solvents
JP2008532289A (ja) 銅とlow−k誘電材料を有する基板からレジスト、エッチング残渣、及び酸化銅を除去する方法
IL165581A (en) Cleaning compositions for microelectronic substrates
CA2452884C (en) Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility
CN101223265A (zh) 剥离剂组合物
JP4463054B2 (ja) ホトレジスト用剥離液およびこれを用いた基板の処理方法
TWI857149B (zh) 光阻移除劑
TW202328358A (zh) 用於從一基材移除光阻劑及蝕刻殘留物之具有銅腐蝕抑制劑的組合物及其用途
JP2024519702A (ja) 基材からフォトレジストを除去するための組成物及びその組成物の使用
TW202538047A (zh) 用於移除光阻及蝕刻殘餘物之組合物、其使用方法及用途
AU2024322455A1 (en) Surfactants for electronics
JP2025517471A (ja) ポリシリコンエッチング用に配合されたアルカリ化学物質
WO2022047175A1 (en) Cleaning compositions
WO2023140345A1 (ja) フォトレジスト剥離組成物