TW202324624A - Ejector pin and wafer clamping device capable of ensuring tight clamping between the ejector pin and the wafer and also reducing internal stress generated by vibration in the radial direction of the wafer - Google Patents
Ejector pin and wafer clamping device capable of ensuring tight clamping between the ejector pin and the wafer and also reducing internal stress generated by vibration in the radial direction of the wafer Download PDFInfo
- Publication number
- TW202324624A TW202324624A TW111147246A TW111147246A TW202324624A TW 202324624 A TW202324624 A TW 202324624A TW 111147246 A TW111147246 A TW 111147246A TW 111147246 A TW111147246 A TW 111147246A TW 202324624 A TW202324624 A TW 202324624A
- Authority
- TW
- Taiwan
- Prior art keywords
- wafer
- clamping rod
- memory alloy
- thimble
- ejector pin
- Prior art date
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
本發明關於半導體器件製造技術領域,具體關於一種頂針及晶圓夾持裝置。The invention relates to the technical field of semiconductor device manufacturing, in particular to a thimble and a wafer clamping device.
在半導體器件製造過程中,晶圓的濕法工藝是影響產品良率的重要工藝過程。目前的濕法工藝,一般將進行濕法刻蝕或清洗的晶圓固定在晶圓卡盤上,晶圓卡盤上設置有頂針,晶圓卡盤通過頂針夾持晶圓並帶動晶圓旋轉,同時,晶圓上方的噴嘴噴出的化學液對晶圓的表面進行濕法刻蝕或清洗。In the semiconductor device manufacturing process, the wet process of the wafer is an important process that affects the product yield. In the current wet process, the wafer to be wet-etched or cleaned is generally fixed on the wafer chuck. The wafer chuck is provided with a thimble, and the wafer chuck clamps the wafer through the thimble and drives the wafer to rotate. At the same time, the chemical liquid sprayed from the nozzle above the wafer performs wet etching or cleaning on the surface of the wafer.
然而,長時間的濕法刻蝕或清洗工藝使頂針易受到以下三個方面的影響而減少頂針的使用壽命,具體如下: 第一,頂針在夾持晶圓時,夾持的晶圓會在徑向方向上產生振動,因此,會導致頂針在晶圓的徑向方向上存在著一定的機械載荷; 第二,對晶圓表面進行濕法工藝過程中,有些需要在一定的高溫條件下進行,高溫的環境會使得頂針出現熱軟化和熱變形的現象,其中,在高溫下頂針發生熱變形現象會導致頂針內部存在著一定的熱載荷,頂針的熱軟化現象會導致頂針選用的材料的彈性模量降低; 第三,高溫清洗的過程中,噴嘴噴出的化學液會被加熱,高溫的化學液會對頂針造成一定的化學腐蝕。 However, the long wet etching or cleaning process makes the thimble vulnerable to the following three aspects and reduces the service life of the thimble, as follows: First, when the thimble clamps the wafer, the clamped wafer will vibrate in the radial direction, therefore, there will be a certain mechanical load on the thimble in the radial direction of the wafer; Second, during the wet process on the surface of the wafer, some need to be carried out under certain high temperature conditions. The high temperature environment will cause thermal softening and thermal deformation of the ejector pins. Among them, thermal deformation of the ejector pins at high temperatures will cause As a result, there is a certain thermal load inside the thimble, and the thermal softening of the thimble will lead to a decrease in the elastic modulus of the material used for the thimble; Third, during the high-temperature cleaning process, the chemical liquid sprayed from the nozzle will be heated, and the high-temperature chemical liquid will cause certain chemical corrosion on the thimble.
因此,受到上述機械載荷、熱載荷和化學腐蝕三方面綜合作用的影響,頂針易產生強度失效,從而導致頂針的斷裂。另外,頂針在高溫下發生熱軟化現象導致頂針的變形量過大,最終會導致頂針無法有效夾持住晶圓,進而導致晶圓表面化學液的液膜不穩定,造成化學液飛濺。Therefore, affected by the comprehensive effects of the above three aspects of mechanical load, thermal load and chemical corrosion, the thimble is prone to strength failure, which leads to the fracture of the thimble. In addition, the thermal softening of the thimble at high temperature leads to excessive deformation of the thimble, which will eventually lead to the inability of the thimble to effectively clamp the wafer, which in turn leads to instability of the chemical liquid film on the wafer surface, resulting in splashing of the chemical liquid.
綜上所述,有必要提出一種新型的頂針及晶圓夾持裝置以解決上述問題。To sum up, it is necessary to propose a novel thimble and wafer clamping device to solve the above problems.
鑒於以上所述現有技術的缺點,本發明的目的在於提供一種頂針及晶圓夾持裝置,旨在解決傳統頂針在夾持晶圓時易發生斷裂和熱變形的缺陷。In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide an ejector pin and a wafer clamping device, aiming at solving the defects that traditional ejector pins are prone to breakage and thermal deformation when clamping a wafer.
為達到上述目的及其他相關目的,本發明提供了一種頂針,包括: 殼體,頂部設置有凸起; 夾持棒,設置於殼體內部,夾持棒的頂端延伸至凸起,並通過凸起對待夾持件進行夾持,夾持棒的材料為記憶合金。 To achieve the above purpose and other related purposes, the present invention provides a thimble, comprising: The shell is provided with a protrusion on the top; The clamping rod is arranged inside the housing. The top end of the clamping rod extends to the protrusion, and the workpiece to be clamped is clamped by the protrusion. The material of the clamping rod is memory alloy.
根據本發明的一個實施例,頂針還包括: 階梯孔,設置於殼體內部,階梯孔的上孔延伸至凸起內部,所述夾持棒與所述階梯孔的上孔過盈配合; 堵頭,設置於殼體內部,與階梯孔的下孔緊配合。 According to one embodiment of the present invention, the thimble also includes: The stepped hole is arranged inside the housing, the upper hole of the stepped hole extends to the inside of the protrusion, and the clamping rod is in interference fit with the upper hole of the stepped hole; The plug is arranged inside the housing and tightly fits with the lower hole of the stepped hole.
根據本發明的一個實施例,階梯孔的上孔直徑小於下孔的直徑。According to an embodiment of the present invention, the diameter of the upper hole of the stepped hole is smaller than the diameter of the lower hole.
根據本發明的一個實施例,夾持棒的記憶合金被預先訓練為使得夾持棒的溫度超過記憶合金的相變溫度時,由初始的豎直狀態變形為朝向待夾持件的彎曲狀態。According to an embodiment of the present invention, the memory alloy of the clamping rod is pre-trained so that when the temperature of the clamping rod exceeds the phase transition temperature of the memory alloy, the initial vertical state is deformed into a bent state toward the object to be clamped.
根據本發明的一個實施例,夾持棒的溫度超過記憶合金材料的相變溫度時,夾持棒的彎曲值根據記憶合金發生熱變形的變形量和待夾持件發生振動的位移量來共同調節。According to one embodiment of the present invention, when the temperature of the clamping rod exceeds the phase transition temperature of the memory alloy material, the bending value of the clamping rod is determined according to the deformation amount of the thermal deformation of the memory alloy and the displacement amount of the vibration of the part to be clamped. adjust.
根據本發明的一個實施例,記憶合金的材料選用雙向記憶合金鎳鈦諾。According to an embodiment of the present invention, the material of the memory alloy is Nitinol, a two-way memory alloy.
根據本發明的一個實施例,殼體選用耐腐蝕耐高溫的材料。According to an embodiment of the present invention, the casing is made of corrosion-resistant and high-temperature-resistant materials.
根據本發明的一個實施例,堵頭的材料與殼體的材料一致。According to an embodiment of the present invention, the material of the plug is consistent with the material of the housing.
本發明還提供了一種晶圓夾持裝置,包括: 晶圓卡盤,用於放置晶圓; 上述的頂針,設置於晶圓卡盤的外周,用於抵住晶圓的側壁以夾持晶圓。 The present invention also provides a wafer clamping device, comprising: Wafer chuck for placing wafers; The above-mentioned thimble pins are arranged on the outer periphery of the wafer chuck, and are used to abut against the side wall of the wafer to clamp the wafer.
根據本發明的一個實施例,頂針為多個,多個頂針均勻分佈於晶圓卡盤的外周。According to an embodiment of the present invention, there are multiple ejector pins, and the plurality of ejector pins are evenly distributed on the outer periphery of the wafer chuck.
如上所述,相對於現有技術,本發明提供了一種頂針及晶圓夾持裝置,具有以下有益效果: 本發明提供的頂針及晶圓夾持裝置,利用記憶合金在相變溫度恢復為受訓形狀的特性,在頂針內部壓入記憶合金材料的夾持棒,使得頂針能夠在高溫工藝的環境下主動補償了其自身的熱變形量,從而保證了頂針和晶圓之間的緊密夾持,同時也降低了頂針夾持晶圓時在晶圓徑向方向上振動產生的內應力,有效提升了晶圓夾持裝置的使用壽命。 As mentioned above, compared with the prior art, the present invention provides a thimble and wafer clamping device, which has the following beneficial effects: The thimble and wafer clamping device provided by the present invention utilize the characteristic that the memory alloy returns to the trained shape at the phase transition temperature, and press the clamping rod of the memory alloy material inside the thimble, so that the thimble can actively compensate in the high-temperature process environment It reduces its own thermal deformation, thereby ensuring the tight clamping between the thimble and the wafer, and also reducing the internal stress generated by the vibration of the thimble in the radial direction of the wafer when the thimble clamps the wafer, effectively improving the quality of the wafer. Service life of the clamping device.
以下通過特定的具體實例說明本發明的實施方式,本領域技術人員可由本說明書所揭露的內容輕易地瞭解本發明的其他優點與功效。本發明還可以通過另外不同的具體實施方式加以實施或應用,本說明書中的各項細節也可以基於不同觀點與應用,在沒有背離本發明的精神下進行各種修飾或改變。Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.
請參閱圖1至圖4B。需要說明的是,本實施例中所提供的圖示僅以示意方式說明本發明的基本構想,雖圖示中僅顯示與本發明中有關的組件而非按照實際實施時的元件數目、形狀及尺寸繪製,其實際實施時各元件的形態、數量及比例可為一種隨意的改變,且其元件佈局形態也可能更為複雜。See Figures 1 through 4B. It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of the present invention, although only the components related to the present invention are shown in the diagrams rather than the number, shape and Dimensional drawing, the shape, quantity and proportion of each component can be changed arbitrarily during actual implementation, and the layout of the components may also be more complex.
本發明揭示的實施例提供了一種頂針1,頂針1包括殼體101、凸起102和夾持棒104。其中,凸起102設置於殼體101的頂部,夾持棒104設置於殼體101內部,且夾持棒104的頂端延伸至凸起102,並通過凸起102對待夾持件進行夾持。The disclosed embodiment of the present invention provides a
較佳的,如圖1和圖2所示,頂針1還可以包括階梯孔103及堵頭105。具體地,階梯孔103設置於殼體101內部,如圖2所示,階梯孔103的上孔1031延伸至凸起102內部,夾持棒104設置於殼體101內部,且與階梯孔103的上孔1031過盈配合,堵頭105設置於殼體101內部,且與階梯孔103的下孔1032緊配合,夾持棒104的頂端延伸至凸起102,並通過凸起102對待夾持件進行夾持。Preferably, as shown in FIG. 1 and FIG. 2 , the
夾持棒104的材料為記憶合金,其中,記憶合金材料所處的溫度超過記憶合金材料發生相變的相變溫度
T
c 時,能夠實現奧氏體狀態和馬氏體狀態之間相的轉變。因此,對記憶合金進行訓練,使夾持棒104的記憶合金被預先訓練為使得夾持棒104的溫度超過記憶合金的相變溫度T
c時,由初始的豎直狀態變形為朝向待夾持件的彎曲狀態,以對待夾持件進行夾持。
The material of the
在本實施例中,階梯孔103的上孔1031的直徑小於下孔1032的直徑。在殼體101內部設置階梯孔103,使得夾持棒104與上孔1031的過盈配合加工容易實現。由於夾持棒104在壓入殼體101內部時易發生屈曲,故將殼體101內部設置為上孔1031直徑較小、下孔1032直徑較大的階梯孔103,可以方便夾持棒104順利壓入上孔1031內,且與上孔1031過盈配合,進而再採用堵頭105壓入下孔1032內,使得堵頭105與下孔1032緊配合,來支撐堵頭105頂部的夾持棒104。In this embodiment, the diameter of the
本發明揭示的實施例還提供了一種晶圓夾持裝置,如圖3所示,該晶圓夾持裝置包括頂針1和晶圓卡盤2,如圖3所示,晶圓卡盤2用於放置晶圓
w,頂針1設置於晶圓卡盤2的外周,用於抵住晶圓
w的側壁,以夾持晶圓
w。
The disclosed embodiment of the present invention also provides a wafer clamping device, as shown in Figure 3, the wafer clamping device includes a
其中,在本實施例中,頂針1為多個,多個頂針1均勻分佈於晶圓卡盤2的外周,如圖3所示,頂針1為6個,均勻分佈在晶圓卡盤2的外周。根據圖3中虛線框部分的放大圖可知,6個頂針1分別抵住晶圓
w的側壁,用以共同夾持晶圓
w,避免晶圓
w在工藝過程中發生振動。
Wherein, in this embodiment, there are a plurality of
在本實施例中,如圖4A所示,當濕法工藝開始之前,工藝溫度T為室溫,工藝溫度T低於記憶合金材料發生相變的相變溫度T c,此時,夾持棒104的頂端處於豎直狀態。 In this embodiment, as shown in Figure 4A, before the wet process starts, the process temperature T is room temperature, and the process temperature T is lower than the phase transition temperature T c at which the memory alloy material undergoes phase transition. At this time, the clamping rod The top of 104 is in vertical state.
如圖4B所示,當濕法工藝的工藝溫度
T逐漸升溫,熱量通過化學液和晶圓
w傳導至夾持棒104,使得夾持棒104的自身溫度升高並超過其記憶合金材料發生相變的相變溫度T
c,夾持棒104的頂端變為其訓練時的形狀,即,夾持棒104由豎直狀態向晶圓
w的圓心方向彎曲,以帶動凸起102向晶圓
w的圓心方向彎曲,來抵住晶圓
w的側壁,以補償頂針1的凸起102在高溫下發生熱變形的變形量,從而避免了高溫工藝環境下頂針1產生熱變形,同時,抵消晶圓
w在徑向方向上發生振動的位移量,以保證晶圓
w夾持的穩定性,從而降低頂針1受機械載荷產生的應力,有效提高頂針1的使用壽命。
As shown in Figure 4B, when the process temperature T of the wet process is gradually increased, the heat is conducted to the
如圖4A所示,當濕法工藝的工藝溫度T逐漸恢復至室溫時,夾持棒104的頂端逐漸恢復為初始的豎直狀態。As shown in FIG. 4A , when the process temperature T of the wet process gradually returns to room temperature, the tops of the
在本實施例中,濕法工藝的工藝溫度T為60°~170°。記憶合金的材料可選用雙向記憶合金鎳鈦諾,雙向記憶合金鎳鈦諾的相變溫度T c為90°,雙向記憶合金鎳鈦諾的疲勞壽命滿足:記憶合金鎳鈦諾的形變量為2%時,其形變次數為10 5次;記憶合金鎳鈦諾的形變量為0.5%時,其形變次數為10 7次。然而,需要注意的是,當雙向記憶合金鎳鈦諾在長時間處於250°的環境下,其塑性形變記憶復原的強度將會大大降低。 In this embodiment, the process temperature T of the wet process is 60°-170°. The material of memory alloy can be selected two-way memory alloy Nitinol, and the phase transition temperature Tc of two-way memory alloy Nitinol is 90 °, and the fatigue life of two-way memory alloy Nitinol satisfies: the deformation amount of memory alloy Nitinol is 2 %, the number of deformations is 10 5 times; when the deformation of memory alloy Nitinol is 0.5%, the number of deformations is 10 7 times. However, it should be noted that when the two-way memory alloy Nitinol is placed in an environment of 250° for a long time, the strength of its plastic deformation memory recovery will be greatly reduced.
具體地,雙向記憶合金鎳鈦諾的化學成分及機械性能分別如下表1和表2所示:
表1 雙向記憶合金鎳鈦諾的化學成分表56.2%
在本實施例中,夾持棒104處於超過記憶合金材料發生相變的相變溫度T
c的工藝溫度T時,夾持棒104的彎曲值根據記憶合金發生熱變形的變形量和晶圓
w在徑向方向上發生振動的位移量來共同調節。
In this embodiment, when the
在本實施例中,將夾持棒104包裹在殼體101內部,有效避免了記憶合金材料受到外界高溫化學液的腐蝕。殼體101選用耐腐蝕耐高溫的材料,堵頭105的材料與殼體101一致,以避免高溫化學液的腐蝕。In this embodiment, the
本發明提供了一種頂針及晶圓夾持裝置,利用記憶合金在相變溫度恢復為受訓形狀的特性,在頂針內部壓入記憶合金材料的夾持棒,使得頂針能夠在高溫工藝環境下主動補償了其自身的熱變形量,從而保證了頂針和晶圓之間的緊密夾持,同時也降低了頂針夾持晶圓時在晶圓徑向方向上振動產生的內應力,有效提升了晶圓夾持裝置的使用壽命。The invention provides a thimble and a wafer clamping device, which utilizes the property that the memory alloy returns to a trained shape at a phase transition temperature, and presses a clamping rod of a memory alloy material into the thimble, so that the thimble can actively compensate in a high-temperature process environment It reduces its own thermal deformation, thereby ensuring the tight clamping between the thimble and the wafer, and also reducing the internal stress generated by the vibration of the thimble in the radial direction of the wafer when the thimble clamps the wafer, effectively improving the quality of the wafer. Service life of the clamping device.
儘管本發明的內容已經通過上述優選實施例作了詳細介紹,但應當認識到上述的描述不應被認為是對本發明的限制。在本領域技術人員閱讀了上述內容後,對於本發明的多種修改和替代都將是顯而易見的。因此,本發明的保護範圍應由所附的申請專利範圍來限定。Although the content of the present invention has been described in detail through the above preferred embodiments, it should be understood that the above description should not be considered as limiting the present invention. Various modifications and alterations to the present invention will become apparent to those skilled in the art upon reading the above disclosure. Therefore, the protection scope of the present invention should be defined by the appended patent application scope.
1:頂針 101:殼體 102:凸起 103:階梯孔 1031:上孔 1032:下孔 104:夾持棒 105:堵頭 2:晶圓卡盤 w:晶圓 1: ejector pin 101: shell 102: protrusion 103: stepped hole 1031: upper hole 1032: lower hole 104: clamping rod 105: plug 2: wafer chuck w : wafer
圖1為本發明實施例中提供的頂針結構示意圖; 圖2為本發明實施例中提供的頂針結構剖視圖; 圖3為本發明實施例中提供的晶圓夾持裝置夾持晶圓的結構示意圖; 圖4A為本發明實施例中提供的頂針在室溫下保持初始的豎直狀態的剖視圖; 圖4B為本發明實施例中提供的頂針在臨界狀態以上成彎曲狀態的剖視圖。 Fig. 1 is a schematic structural diagram of a thimble provided in an embodiment of the present invention; Fig. 2 is a sectional view of the ejector pin structure provided in the embodiment of the present invention; 3 is a schematic structural view of a wafer clamping device provided in an embodiment of the present invention; FIG. 4A is a cross-sectional view of the thimble provided in the embodiment of the present invention in an initial vertical state at room temperature; Fig. 4B is a cross-sectional view of the thimble provided in the embodiment of the present invention in a bent state above the critical state.
101:殼體 101: shell
102:凸起 102: Raised
103:階梯孔 103: Ladder hole
1031:上孔 1031: upper hole
1032:下孔 1032: Bottom hole
104:夾持棒 104: Clamping rod
105:堵頭 105: Plug
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202111497655.0A CN116259572A (en) | 2021-12-09 | 2021-12-09 | Thimble and wafer clamping device |
CN202111497655.0 | 2021-12-09 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW202324624A true TW202324624A (en) | 2023-06-16 |
Family
ID=86681161
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW111147246A TW202324624A (en) | 2021-12-09 | 2022-12-08 | Ejector pin and wafer clamping device capable of ensuring tight clamping between the ejector pin and the wafer and also reducing internal stress generated by vibration in the radial direction of the wafer |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN116259572A (en) |
TW (1) | TW202324624A (en) |
-
2021
- 2021-12-09 CN CN202111497655.0A patent/CN116259572A/en active Pending
-
2022
- 2022-12-08 TW TW111147246A patent/TW202324624A/en unknown
Also Published As
Publication number | Publication date |
---|---|
CN116259572A (en) | 2023-06-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5893760A (en) | Method of heat treating a semiconductor wafer to reduce stress | |
US5154301A (en) | Wafer carrier | |
CN2597491Y (en) | Heat treatment device | |
TWI235741B (en) | Process for manufacturing a product of glassy carbon | |
JP2009170822A (en) | Placement table device, processing apparatus, temperature control method, and storage medium | |
TW202324624A (en) | Ejector pin and wafer clamping device capable of ensuring tight clamping between the ejector pin and the wafer and also reducing internal stress generated by vibration in the radial direction of the wafer | |
US10890382B2 (en) | Heat dissipation device | |
US11065671B2 (en) | Method of manufacturing a heat dissipation device | |
CN107910248A (en) | A kind of method for improving the brilliant back of the body defect of bonding wafer | |
US20180361460A1 (en) | Method of manufacturing a heat dissipation unit | |
JP5530653B2 (en) | Substrate holding jig and cleaning device | |
JP2010056294A (en) | Thermal processing apparatus | |
JP3827563B2 (en) | Mold for superplastic processing of aluminum alloy sheet | |
CN108565206B (en) | Cleaning method of silicon chip surface soldering flux | |
JPH0465376A (en) | Si impregnated sic product coated by cvd and production thereof | |
US20180372431A1 (en) | Heat dissipation device | |
JP2002076580A (en) | Method and device for correcting warpage of printed resin board | |
TWI628732B (en) | Gripping equipment for wafer and gripping method thereof | |
KR20040105796A (en) | Nitrided Mo alloy worked material having high corrosion resistance, high strenth and high toughness and method for prodution thereof | |
TWI481737B (en) | Bearing fixture | |
JP7155200B2 (en) | Substrate transfer unit for heat treatment equipment | |
CN220651977U (en) | Wafer boat and semiconductor device | |
KR20060119555A (en) | Heating equipment for semiconductor manufacturing | |
KR100820216B1 (en) | The process of the partial gilting for back ferrule | |
JP2012009647A (en) | Thermal processing apparatus and method |