TW202323894A - Optical interconnection device and fabrication method thereof - Google Patents

Abstract

An optical interconnection device and a fabrication method thereof are provided. The optical interconnection device includes a plurality of electrical chips, which include a first electrical chip and a second electrical chip; a first optical interconnection, which has a plurality of optical waveguides; wherein the first electrical chip and the second electrical chip are connected in communication through an optical waveguide of the first optical interconnection. According to the embodiment of the present invention, a plurality of electrical chips can realize, for example, a hybrid cube network network communication interconnection topology or other complex interconnection topologies through optical interconnection, and simultaneously process information in parallel. There is a tight information interconnection between chips and chips, which can better meet the computing power and bandwidth requirements of artificial intelligence algorithms. Compared with electrical interconnection, optical interconnection has large bandwidth, low delay, low power consumption, high integration and strong anti-electromagnetic interference ability.

Description

Optical interconnection device and manufacturing method thereof

The present invention relates to the technical field of wafers, and more specifically, relates to an optical interconnection device and a manufacturing method thereof.

VLSI technology has become a pillar supporting the development and evolution of an information society. Various types of chips widely used in information systems usually rely on the upgrade of the chip process to achieve performance improvement and power consumption optimization. However, as the wafer manufacturing process is gradually approaching the physical limit, the pace of Moore's Law is slowing down, and further development requires new ideas. Traditional information interconnection is mainly realized by electronic conduction through copper media, and the speed and distance of electronic information transmission are limited by the time constant of resistance and capacitance and electrical loss, resulting in the diameter of the required copper wire increasing with the transmission speed and transmission distance. The significant increase, coupled with signal crosstalk between electronic information channels, constrains the power consumption and bandwidth density of interconnects. On the other hand, high-speed interconnections are often required between chips. For example, with the development of the field of artificial intelligence, the application of deep learning algorithms often requires a large amount of data on the computing chip to have high-speed communication between the computing unit and the memory unit. This makes the power consumption and bandwidth density of conventional electrical interconnects a more serious problem, limiting the development of higher-performance AI chips.

The invention provides an optical interconnection device and a manufacturing method thereof. The optical interconnection is used as an interconnection medium between chips, thereby avoiding various defects caused by electrical interconnection.

According to one aspect of the present invention, an optical interconnection device is provided, which includes: a plurality of electric chips, which include a first electric chip and a second electric chip; a first optical interconnection, which has a plurality of optical chips A waveguide; wherein, the first electronic chip and the second electronic chip are connected in communication through the optical waveguide of the first optical interconnection.

In some embodiments, the optical interconnection device further includes: an electro-optical conversion unit, which is connected to the first electronic chip, and is used to carry the information carried by the electrical signal of the first electronic chip into an optical signal, and the optical signal transmission in the optical waveguide of the first optical interconnection; a photoelectric conversion unit, which is connected to the second electronic chip, converts the received optical signal into an electrical signal transmitted to the second electronic chip; wherein, the optical signal The transmission path from the electro-optical conversion unit to the photoelectric conversion unit includes: an optical waveguide in the first optical interconnection.

In some embodiments, the first optical interconnect is disposed on the carrier substrate; the electric chips are disposed on the first optical interconnect; wherein the first optical interconnect includes a photonic integrated circuit, The photonic integrated circuit includes the optical waveguides, the electro-optical conversion unit, and the photoelectric conversion unit.

In some embodiments, the optical interconnection device further includes: a plurality of optical fibers; and a second optical interconnection with a plurality of optical waveguides, the second optical interconnection and the first optical interconnection pass through the Optical fiber interconnection; wherein, the transmission path of the optical signal from the electro-optical conversion unit to the photoelectric conversion unit includes: successively passing through the optical waveguide in the first optical interconnection, at least one of the optical fibers, and the second The transmission path of the optical waveguide of the optical interconnect.

In some embodiments, the first optical interconnection and the second optical interconnection are disposed on the carrier substrate; the first chip is disposed on the first optical interconnection, and the first optical interconnection Comprising a photonic integrated circuit, the photonic integrated circuit includes the optical waveguides and the electro-optical conversion unit; the second electric chip is arranged on the second optical interconnection, and the second optical interconnection includes a photonic integrated circuit, The photonic integrated circuit of the second optical interconnection includes the photoelectric conversion unit.

In some embodiments, the photonic integrated circuit of the first optical interconnect further includes a dielectric layer, a first conductive wiring unit, and a second conductive wiring unit; a plurality of optical waveguides in the photonic integrated circuit, the electro-optic The conversion unit and the photoelectric conversion unit are covered by the dielectric layer; the first conductive wiring unit is configured to electrically connect the electro-optical conversion unit to the first wafer; the second conductive wiring unit is configured to connect the photoelectric The conversion unit is electrically connected to the second electric chip; the first conductive wiring unit includes a first electrical connection structure, and the first electrical connection structure passes through at least part of the dielectric layer; the second conductive wiring unit includes a second electrical connection structure, the second electrical connection structure passes through at least part of the dielectric layer.

In some embodiments, the electro-optic conversion unit includes a modulator array, which modulates the information carried by the electrical signal of the first transistor into optical signals of different wavelengths and transmits them in a wavelength division multiplexing manner; the photoelectric conversion The unit includes a detector array, which performs wave division multiplexing on the received optical signal and converts it into an electrical signal transmitted to the second transistor.

In some embodiments, the modulator array includes a plurality of microring modulators; and/or the detector array includes a plurality of microring filter detectors.

In some embodiments, the chips include one or more chiplets.

In some embodiments, the first die and the second die are mounted during a wafer level packaging process.

According to one aspect of the present invention, an optical interconnection device is provided, the optical interconnection device includes: a first electric chip, a second electric chip; a first optical interconnect; the first electric chip and the second electric chip are arranged on On the first optical interconnection; the first optical interconnection includes a photonic integrated circuit, and the photonic integrated circuit includes: a plurality of optical waveguides; a first electro-optical conversion unit, which is connected to the first electric chip, for Carrying the information carried by the electrical signal of the first electronic chip into the first optical signal; the first photoelectric conversion unit, which is connected to the second electronic chip, is used to convert the first optical signal into the first optical signal The electric signal of the second electric chip; the second electro-optical conversion unit, which is connected to the second electric chip, and is used to carry the information carried by the electric signal of the second electric chip into the second optical signal; and the second photoelectric conversion unit , which is connected to the first transistor for converting the second optical signal into an electrical signal transmitted to the first transistor; wherein, the first optical signal is transmitted from the first electro-optical conversion unit to the first photoelectric The transmission path of the conversion unit includes: at least one of the optical waveguides in the first optical interconnect; wherein, the transmission path of the second optical signal from the second electro-optical conversion unit to the second photoelectric conversion unit includes : at least one of the optical waveguides in the first optical interconnection.

In some embodiments, the optical interconnection device further includes a second optical interconnection, a third electronic chip, and a plurality of optical fibers, wherein the third electronic chip is disposed on the second optical interconnection, and the optical fibers The first optical interconnection and the second optical interconnection are optically connected; the photonic integrated circuit of the first optical interconnection also includes a third electro-optical conversion unit, which is connected to the first electric chip, and used The information carried by the electrical signal of the first chip is carried to the third optical signal; the second optical interconnection includes a photonic integrated circuit, and the photonic integrated circuit of the second optical interconnection includes a plurality of optical waveguides , a third photoelectric conversion unit, which is connected to the third electric chip, and is used to convert the third optical signal into an electric signal transmitted to the third electric chip; wherein, the third optical signal is converted from the third electro-optic The transmission path from the unit to the third photoelectric conversion unit includes: an optical waveguide in the first optical interconnection, at least one optical fiber among the optical fibers, and an optical waveguide in the second optical interconnection.

In some embodiments, the photonic integrated circuit of the first optical interconnection further includes: a dielectric layer and a plurality of conductive wiring units; the dielectric layer covers the photonic integrated circuit of the first optical interconnection The optical waveguides, the first electro-optical conversion unit, the first photoelectric conversion unit, the second electro-optic conversion unit, the second photoelectric conversion unit; the conductive wiring units are configured to configure the first electro-optic conversion unit, The first photoelectric conversion unit, the second photoelectric conversion unit, and the second photoelectric conversion unit are electrically connected to corresponding electric chips; the conductive wiring units include a plurality of electrical connection structures, and each of the electrical connection structures Each passes through at least part of the dielectric layer.

In some embodiments, the first electro-optical conversion unit and the second electro-optic conversion unit each include one or a plurality of optical modulators, the first photoelectric conversion unit, and the second photoelectric conversion unit each include one or a plurality of Photodetector.

In some embodiments, the light modulator comprises a microring modulator; and/or the photodetector comprises a microring filtered detector.

In some embodiments, the first transistor, the second transistor, and the third transistor include chiplets.

According to one aspect of the present invention, an optical interconnection device is provided, including: a first optical interconnection, including a first photonic integrated circuit, the first photonic integrated circuit includes a plurality of first electro-optic conversion units, a plurality of first photonic integrated circuits An optical waveguide, and a plurality of first photoelectric conversion units; a second optical interconnection, including a second photonic integrated circuit, the second photonic integrated circuit includes a plurality of second electro-optical conversion units, and a plurality of second optical waveguides , and a plurality of second photoelectric conversion units; a plurality of first electric chips, arranged on the first optical interconnection; a plurality of second electric chips, arranged on the second optical interconnection; the first The electro-optical conversion unit is configured to: make each of the first electric chips correspond to at least one electro-optic conversion unit; the first photoelectric conversion units are configured to: make each of the first electric chips correspond to at least one The photoelectric conversion unit; the first optical waveguides are configured to: for any two electric chips in the first electric chips, optically connect an electric-optical conversion unit corresponding to one of the electric chips to a corresponding one of the other electric chips A photoelectric conversion unit enables any two electric chips in the first electric chips to realize communication.

In some embodiments, the first optical interconnect is optically connected to the second optical interconnect; at least one of the first chips passes through the first optical interconnect and the second optical interconnect. The interconnection communicates with at least one of the second transistors.

In some embodiments, the first optical interconnection is optically connected to the second optical interconnection through a plurality of optical fibers or a plurality of optical waveguides, so that at least one of the first transistors, and the communicate with at least one of the second transistors.

In some embodiments, the first photonic integrated circuit further includes: a dielectric layer and a plurality of conductive wiring units; the dielectric layer covers the optical waveguides, the first electro-optical integrated circuits in the first photonic integrated circuit conversion unit, the first photoelectric conversion units; each of the conductive wiring units is electrically connected to each of the first photoelectric conversion units, or is connected to each of the first photoelectric conversion units Electrically connected; the conductive wiring units include a plurality of electrical connection structures, each of which passes through at least part of the dielectric layer; and the conductive wiring units are electrically connected to the first electrical chip, so as to electrically connect each of the first photoelectric conversion units to a corresponding electric chip, or to electrically connect each of the first photoelectric conversion units to a corresponding electric chip.

According to one aspect of the present invention, there is provided a method for manufacturing an optical interconnection device, which is characterized in that it includes: providing a wafer; forming a plurality of photonic integrated circuits on the wafer; wherein, among the photonic integrated circuits Each can include a plurality of optical waveguides, and electro-optical conversion units, photoelectric conversion units; install at least one electric chip required on each of these photonic integrated circuits; divide the wafer to obtain a plurality of independent optical interconnection device.

The optical interconnects are used to connect the electronic chips, and the information on different electronic chips is loaded on the light wave, and then the light is shuttled at high speed in the optical interconnects to complete the information interconnection between different chips. Compared with electrical interconnection, optical interconnection has large bandwidth, low delay, low power consumption, high bulk density and strong anti-electromagnetic interference ability. Moreover, the optical interconnection transmission information on a chip or between chips is not sensitive to distance, allowing more data to be transmitted over a longer distance, making the design of computing device architecture more flexible. Therefore, the electric chip connected by optical interconnects can not only maintain the advantages of high yield, low cost and fast product iteration cycle of electric chip, but also solve the power consumption and bandwidth density bottleneck of interconnection between small chips. Applying to artificial intelligence chips can achieve higher system energy efficiency ratio.

Compared with the transmission of electrical signals through electrical wires, the transmission of optical signals through optical waveguides can reduce problems such as energy loss, delay, and crosstalk, and help improve the interconnection performance between chips. In particular, the present invention provides a solution for the interconnection of chiplets. By replacing a multifunctional single large chip with multiple small chips (Chiplets), the physical bottleneck of the chip area can be broken, which is an important way to achieve higher performance chips. As the area of each die becomes smaller, the number of dies that can be placed on a single wafer increases, which can improve yield and reduce cost. At the same time, the use of small chip technology can flexibly upgrade only some modules when improving system performance, so the iterative cycle of system upgrades can be accelerated. In addition, the above-mentioned optical interconnection includes a photonic integrated circuit, which is highly integrated and can be directly applied to the interconnection between chips for input/output of electrical signals, and thus facilitates the miniaturization and integration of chip packaging.

Further, the plurality of optical interconnects can also be optically interconnected, so that the transistors disposed on different optical interconnects can also realize optical connection, so that the optical interconnection is not limited to the same optical interconnect.

In addition, the modulator array uses a high-efficiency and small-area micro-ring modulator array, and the detector array uses a micro-ring filter detector with wave division multiplexing function, so that a large amount of information can be transmitted between transistors without being affected. Limitations on power consumption and bandwidth density. By arranging the modulator array and the detector array at the position of the optical interconnection, a plurality of identical transistors and a plurality of identical optical interconnections can be used to realize a hybrid cube network communication interconnection topology or other complex interconnections The connection topology allows multiple chips to process information in parallel at the same time, and the chips are tightly interconnected, which can better meet the computing power and bandwidth requirements of artificial intelligence algorithms. Compared with existing artificial intelligence products, the optical interconnection device of the embodiment of the present invention can integrate more computing units (chips) and memory units (chips), and the use of optical interconnection can ensure organic information interconnection between them, Thereby providing a higher system energy efficiency ratio.

Various aspects, features, advantages, etc. of the embodiments of the present invention will be specifically described below with reference to the accompanying drawings. According to the following detailed description in conjunction with the accompanying drawings, the above-mentioned aspects, features, advantages, etc. of the present invention will become more clear.

In order to facilitate the understanding of various aspects, features and advantages of the technical solutions of the present invention, the present invention will be specifically described below in conjunction with the accompanying drawings. It should be understood that the various embodiments described below are only for illustration, rather than limiting the protection scope of the present invention.

"Including" mentioned in this article is an open term, so it should be interpreted as "including but not limited to". "Approximately" means that within an acceptable error range, those skilled in the art can solve the technical problem within a certain error range and basically achieve the technical effect.

In addition, the term "connected" herein includes any direct and indirect means of connection. Therefore, if it is described in the text that a first device is connected to a second device, it means that the first device may be directly connected to the second device, or indirectly connected to the second device through other devices.

The descriptions of "first" and "second" in this article are used to distinguish different devices, modules, structures, etc. . In addition, in the description of the application, the patent scope of the application and some processes described in the above drawings, there are multiple operations that appear in a specific order, and these operations may not be performed in the order in which they appear in this document or in parallel. . The serial numbers of the operations, such as 101, 102, etc., are only used to distinguish different operations, and the serial numbers themselves do not represent any execution order. Additionally, these processes can include more or fewer operations, and these operations can be performed sequentially or in parallel.

In one embodiment of the present invention, the optical interconnection device includes a plurality of electric chips and an optical interconnection, and any two electric chips in the plurality of electric chips perform information exchange, that is, communication connection through the optical interconnection. The optical interconnection has a plurality of optical waveguides, for example, the optical interconnection can be implemented using an optical chip. The electric chips include any first electric chip and second electric chip, and the optical interconnection device further includes an electro-optic conversion unit and a photoelectric conversion unit, wherein the electro-optical conversion unit is connected with the first electric chip for connecting the The information carried by the electrical signal of the first electric chip is carried in the optical signal, and the optical signal is transmitted in the optical waveguide of the first optical interconnection; the photoelectric conversion unit is connected with the second electric chip, and receives the optical signal converted into an electrical signal transmitted to the second electronic chip; and, the transmission path of the optical signal from the electro-optical conversion unit to the photoelectric conversion unit includes: an optical waveguide in the first optical interconnection. In some embodiments, the optical interconnect includes the electro-optical conversion unit and the photoelectric conversion unit. The electro-optic conversion unit includes a modulator, the modulator modulates the information carried by the electrical signal of the first transistor into an optical signal, and the optical signal is transmitted to the photoelectric conversion unit through the optical waveguide in the optical interconnection, the The photoelectric conversion unit converts the optical signal into an electrical signal, and the electrical signal is transmitted to the second electronic chip. That is to say, the transmission path of the optical signal from the electro-optical conversion unit to the photoelectric conversion unit includes: the optical waveguide in the optical interconnection.

In another embodiment of the present invention, the optical interconnect device includes a plurality of electric chips and a plurality of optical interconnects, different optical interconnects are interconnected via optical fibers, and the optical interconnects are provided with optical fibers connected to each other. optical coupling structures (such as grating couplers or end-face couplers). Any two electronic chips located at or adjacent to the same optical interconnection perform signal transmission, that is, communication connection through the optical interconnection, as described above, and will not be repeated here. Any two electronic chips located at or adjacent to different optical interconnects transmit signals through corresponding optical interconnects and optical fibers. Specifically, the optical interconnects include a first optical interconnect and a second optical interconnect, each having a plurality of optical waveguides. The dies include any first die located on or adjacent to the first optical interconnect and any second die located on or adjacent to the second optical interconnect. The first optical interconnection includes an electro-optical conversion unit connected to the first electric chip, and the second optical interconnection includes a photoelectric conversion unit connected to the second electric chip, wherein the electro-optic conversion unit connects the first The information carried by the electrical signal of the electric chip is carried into the optical signal, and the optical signal is transmitted to the optical fiber through the optical waveguide in the first optical interconnection, and is transmitted to the second optical interconnection through the optical fiber, and then passed through The optical waveguide of the second optical interconnection is transmitted to the photoelectric conversion unit, and the photoelectric conversion unit converts the optical signal into an electrical signal, and the electrical signal is transmitted to the second electric chip. That is to say, the transmission path of the optical signal from the electro-optical conversion unit to the photoelectric conversion unit includes: successively passing through the optical waveguide in the first optical interconnection, the optical fiber, and the optical waveguide of the second optical interconnection transfer path.

Although the above embodiments are described with the optical signal transmission from the first electronic chip to the second electronic chip, it should be understood that the optical signal transmission from the second electronic chip to the first electronic chip can also be transmitted in the same way. That is to say, for each electric chip, an electro-optical conversion unit and a photoelectric conversion unit for signal transmission with another electric chip are provided in the corresponding optical interconnection.

It should be noted that, the present invention does not specifically limit the number of electrical chips and optical interconnects. In some embodiments, two or more transistors communicate with each other through an optical interconnect. In other embodiments, two or more transistors communicate with each other through two or more optical interconnects.

FIG. 1 is a schematic structural view showing an optical interconnection device according to an exemplary embodiment of the present invention. In an exemplary embodiment of the present invention, the optical interconnection device includes a carrier substrate 100, optical interconnections 201, 202, and a plurality of electric chips, and these electric chips include electric chip A, electric chip B, and electric chip C , Chip D, Chip E, Chip F, Chip G, and Chip H.

Two optical interconnects are arranged side by side on the carrier substrate 100 , namely an optical interconnect 201 and an optical interconnect 202 . In some embodiments, the optical interconnect includes a photonic integrated circuit.

Four chips are integrated on the optical interconnect 201 , which are chip A, chip B, chip C, and chip D respectively. Four transistors are integrated on the optical interconnect 202 , which are respectively a transistor E, a transistor F, a transistor G, and a transistor H. As shown in FIG. Any one of the four electric chips on the same optical interconnection is optically interconnected with the other three electric chips through the optical interconnection, and at the same time is optically interconnected with one electric chip on another optical interconnection. FIG. 2 exemplarily shows the optical interconnection structure of the optical interconnection device and the position of the corresponding electric chips.

In a specific embodiment, the optical interconnect includes a photonic integrated circuit including a plurality of optical waveguides, an electro-optical conversion unit, and a photoelectric conversion unit. In some embodiments, the electro-optic conversion unit includes one or a plurality of optical modulators, and the plurality of modulators may constitute a modulator array. The photoelectric conversion unit includes one or a plurality of photodetectors, and the plurality of photodetectors can form a detector array. Exemplarily, the modulator can modulate the initial light based on the electrical signal, so as to generate an optical signal carrying information, that is, carry the information carried by the electrical signal into the optical signal.

In this exemplary embodiment, the respective photonic integrated circuits of the optical interconnects 201 and 202 are provided with a plurality of electro-optic conversion units and a plurality of photoelectric conversion units, each electro-optic conversion unit includes a modulator array, and each photoelectric conversion unit includes The detector array, as shown in Figure 2. In an exemplary embodiment, the photonic integrated circuit of the optical interconnection can also include a plurality of conductive wiring units (not shown in FIG. 2 ), and each modulator array and detector array can realize communication with The electrical connection of the electric chip, so as to obtain the electric signal carrying information from the electric chip, or send the electric signal carrying information to the electric chip.

In some implementations, as shown in Figure 2, for any one electric chip, it corresponds to connect four modulator arrays (four electro-optical conversion units) and four detector arrays (four photoelectric conversion units) in the optical interconnection unit), and the corresponding area on the optical interconnect is provided with an electric chip (the part pointed to by the electric chip A~H in Fig. 2, that is, the electric chip A~H corresponding to Fig. 1). Taking the transistor A as an example, the corresponding integrated body of the optical interconnection has a modulator array M1, a modulator array M2, a modulator array M3, and a modulator array M4, and the integrated body has a detector array D1 and a detector array D2. , a detector array D3, and a detector array D4. Wherein, the modulator array M1 passes through the optical waveguide in the optical interconnection 201, the optical fiber in the coupling fiber array, the optical waveguide in the optical interconnection 202, and the detector array corresponding to the electric chip F in the optical interconnection 202 For optical communication, the detector array D1 passes through the optical waveguide in the optical interconnection 201, the optical fiber in the coupling fiber array, the optical waveguide in the optical interconnection 202, and the corresponding electric chip F on another optical interconnection 202 The modulator array for optical communication; the modulator array M2 performs optical communication with the detector array corresponding to the electric chip B on the optical interconnection 201 through the optical waveguide in the optical interconnection 201, and the detector array D2 passes through the optical waveguide. The optical waveguide in the interconnection 201 performs optical communication with the modulator array corresponding to the electric chip B on the optical interconnection 201; the modulator array M3 communicates with the optical interconnection through the optical waveguide in the optical interconnection 201 The detector array corresponding to the electric chip C on 201 performs optical communication, and the detector array D3 communicates optically with the modulator array corresponding to the electric chip C on the optical interconnect 201 through the optical waveguide in the optical interconnection 201. Communication; the modulator array M4 carries out optical communication with the detector array corresponding to the electric chip D on the optical interconnection 201 through the optical waveguide in the optical interconnection 201, and the detector array D4 passes through the optical interconnection 201 The optical waveguide is in optical communication with the modulator array corresponding to the transistor D on the optical interconnect 201 .

The optical interconnects 201, 202 may also include an optical coupling structure such as a grating coupler or an end face coupler, which is used to couple the multiple wavelength lasers output by the laser module into the optical interconnect, and pass through a series of beam splitters The modulator distributes the laser energy evenly to the input port of the modulator array under different transistors. The beam splitter may be, for example, a broadband beam splitter. Taking the transistor A as an example, the multiple wavelength lasers output by the laser module are coupled into the optical interconnection 201 through the optical coupling structure 300, and the laser energy is evenly distributed to the optical interconnection 201 through a series of beam splitters 400 The optical waveguides respectively communicate with the optical modulator array M1, the modulator array M2, the modulator array M3, and the modulator array M4, so that the distributed optical signals are input to the corresponding modulator arrays through the corresponding optical waveguides. In some embodiments, a laser module and associated optical components may be provided to couple light emitted by the laser module into an optical waveguide in an optical interconnect. Optionally, the optical interconnections 201 and 202 may also be optically connected through a plurality of optical waveguides.

The information on the corresponding transistors is modulated into optical signals of different wavelengths through each modulator array and transmitted in a wavelength division multiplexing manner, and the modulation is performed through the optical waveguide of the optical interconnect or the optical fiber of the additional coupling optical fiber array The optical signal is transmitted to the detector array under other transistors. The detector array performs wave division multiplexing on the modulated signal and converts it into an electrical signal, thereby completing the information transmission between different transistors. Taking the transistor A as an example, the modulator array M1 loads the information processed and output by the transistor A into an optical signal, and the optical signal sequentially passes through the optical waveguide in the optical interconnection 201, the optical fiber in the coupling fiber array, and the optical interconnection. The optical waveguide in component 202 is transmitted and reaches a detector array under the transistor F. The detector array performs wave division and multiplexing on the received optical signal and converts it into an electrical signal. The electrical signal is input to the transistor F Processed by wafer F. The modulator array M2 loads the information processed and output by the transistor A into the optical signal, and the optical signal is transmitted to a detector array under the transistor B through the optical waveguide in the optical interconnection 201, and the detector array is sensitive to the received The optical signal undergoes wave division multiplexing and is received and converted into an electrical signal. The electrical signal is input into the electronic chip B and processed by the electronic chip B. Modulator array M3 and modulator array M4 undergo similar processing as modulator array M2. In addition, the detector array D1, the detector array D2, the detector array D4, and the detector array D4 also perform wave division multiplexing on the optical signal sent to the transistor A, receive and convert it into an electrical signal, and convert the electrical signal Number input transistor A for processing.

In an exemplary embodiment, the four transistors on each optical interconnect are connected to the nearest neighbor and the next neighbor through optical signals, and then optically interconnected with the other four transistors through a coupling fiber array, finally forming a hybrid The cubic network topology communication interconnection structure is shown in Figure 3. The hybrid cube network topology multiplexes two optical interconnects and eight transistors to improve system energy efficiency. In some embodiments, the electric chip can use a reduced size electric chip, thereby reducing the cost of chip design and processing, and effectively improving the yield of the chip.

FIG. 4 exemplarily shows an electro-optical conversion unit, which includes a modulator array. In some implementations, the modulator array includes a plurality of microring modulators. As shown in Figure 4, the modulator array is composed of a series of microring modulators 401, which are based on the carrier depletion effect and can support high modulation rates. This type of waveguide structure is in different regions of the ridge waveguide Doping is performed to form a horizontal or vertical PN junction structure (including a horizontal or vertical PN junction) 402 . The PN junction works in the reverse bias mode. When the reverse bias voltage is applied, the depletion region in the PN junction increases and the built-in electric field increases. There are no free carriers in the depletion region, and the corresponding refractive index of the ring waveguide 403 changes, causing its resonance wavelength to shift, and the intensity of a specific wavelength near the resonance peak will change greatly, so as to achieve the purpose of intensity modulation . The microring modulator has small size, low power consumption and high modulation efficiency. When modulating the electrical information data from the electric chip, the heating electrode 404 on the microring modulator can be adjusted to correspond to the carrier wave of a specific wavelength, and the modulated optical signals of different wavelengths propagate independently on the optical waveguide 407, realizing multiple Channel WDM signal transmission. Wherein, a plurality of microrings can correspond to a plurality of different wavelengths. The monitoring photodetectors 405 are used to detect whether the performance of the device is normal. For example, if the optical interconnection is faulty, these monitoring photodetectors 405 can be used for analysis. The waveguide terminal 406 can be a dummy photodetector not coupled to an external transistor, which can absorb residual light energy at the end of the waveguide so as not to affect the transmission of optical signals by other optical waveguides. It should be pointed out that the term modulator array only means that it is arranged in a certain position. On the basis of meeting the functional requirements, the term array does not specifically limit the arrangement form and arrangement rules of each modulator, nor is it limited to a two-dimensional form. array.

Fig. 5 exemplarily shows a photoelectric conversion unit, which includes a detector array. In some embodiments, as shown in Fig. 5, the detector array includes a plurality of microring filter detectors 501, and the microring filter detectors 501 includes a heating electrode 502 , a ring waveguide 503 , and a signal light detector 504 . By adjusting the heating electrode 502 on the microring filter detector 501 to adjust the ring waveguide 503, the optical signal of a specific wavelength is filtered from the optical waveguide 507, and downloaded to the signal optical detector 504 coupled with the electric chip to realize the optical signal to the Conversion of electrical signals. Wherein, a plurality of microrings can correspond to a plurality of different wavelengths. Moreover, the residual optical energy at the end of the waveguide is absorbed by the waveguide terminal 505 connected with the optical waveguide 507 and the signal light detector 504, so that it does not affect the signal transmission of other optical waveguides. It should be pointed out that the term detector array only means that it is arranged in a certain position. On the basis of meeting the functional requirements, the term array does not specifically limit the arrangement form and arrangement rules of each detector, nor is it limited to a two-dimensional form. array.

In some embodiments, the electronic chip of the optical interconnection device may be selected from CPU, GPU, memory chip, etc., and may include digital circuits or analog circuits.

An exemplary embodiment of the present invention provides a method for manufacturing an optical interconnection device, which can be used to manufacture the optical interconnection device in the foregoing embodiments. The method includes:

S601. Providing a wafer.

S602. Form a plurality of photonic integrated circuits on the wafer.

Wherein, each of the plurality of photonic integrated circuits may include a plurality of optical waveguides, electro-optical conversion units, and photoelectric conversion units, and the plurality of optical waveguides may be used to form an optical waveguide unit, that is, the optical waveguide unit includes a plurality of optical waveguides. Each photonic integrated circuit in these photonic integrated circuits can also include a plurality of conductive wiring units, and a plurality of conductive wiring units can connect the electro-optical conversion unit and/or the photoelectric conversion unit to the corresponding electric chip, so as to receive signals from the The electrical signal of the chip to be communicated and/or the electrical signal sent to the chip for communication. Typically, multiple photonic integrated circuits are formed in multiple areas on the wafer, and in a subsequent step, the wafer is diced to form individual photonic integrated circuits, which are used to form optical interconnects , that is, the optical interconnect includes the photonic integrated circuit.

S603. Install at least one required electric chip on each of the photonic integrated circuits. For example, a first electric chip and a second electric chip are arranged so that the first electric chip is electrically connected to the first conductive wiring unit, the second electric chip is electrically connected to the second conductive wiring unit, and the first electro-optical conversion unit passes through The first conductive wiring unit receives the first electrical signal of the first electronic chip, and codes to generate a first optical signal; the first photoelectric converter is used to convert the first optical signal into an electrical signal and transmit it to the second conductive wiring unit.

S604, dividing the wafer to obtain a plurality of independent optical interconnection devices.

In some embodiments, a single optical interconnect device includes a single photonic integrated circuit and the first and second dies mounted (disposed) on the photonic integrated circuit. Wherein, the first electric chip and the second electric chip can be carried out through the first conductive wiring unit, the first electro-optic conversion unit, at least one optical waveguide in the plurality of optical waveguides, the first photoelectric conversion unit and the second conductive wiring unit. communication. An independent single optical interconnection device specifically includes one photonic integrated circuit.

In the above S601, the wafer includes a semiconductor layer. In an example, the above-mentioned wafer may be a semiconductor-on-insulator wafer, such as an SOI (Silicon-On-Insulator, silicon-on-insulator) wafer. As shown in FIG. 6 , the semiconductor-on-insulator wafer may include: an insulating layer 602 , a semiconductor layer 603 formed on the insulating layer 602 , and a back substrate layer 601 located below the insulating layer 602 .

In the above S602, a photonic integrated circuit may be formed by performing processes such as patterning, deposition, and doping on the semiconductor layer 603 .

In the above S603, in one example, the first electric chip can be electrically connected to the first conductive wiring unit, and the second electric chip can be electrically connected to the second conductive wiring unit by means of electrical connection such as bonding or welding.

In a specific example, "forming a plurality of photonic integrated circuits on the wafer" in the above-mentioned step S602 can be specifically implemented by the following steps:

S21. Form an optical waveguide unit, the first electro-optical conversion unit, the first electro-optic conversion unit, and the first photoelectric conversion unit on the wafer.

S22. Deposit a dielectric layer on the wafer formed with the optical waveguide unit, the first electro-optical conversion unit, the first electro-optical conversion unit, and the first photoelectric conversion unit, so as to cover the optical waveguide unit, the first electro-optical conversion unit, The first photoelectric conversion unit and the wafer.

S23, forming a first opening and a second opening in the dielectric layer.

S24, forming a first electrical connection structure in the first opening and forming a second electrical connection structure in the second opening.

Wherein, the first conductive wiring unit includes the first electrical connection structure; the second conductive wiring unit includes the second electrical connection structure.

In the above S21, as shown in FIG. 6 and FIG. 7 , the semiconductor layer 603 of the wafer can be patterned to obtain the corresponding regions of the optical waveguide unit 103 , the first electro-optical conversion unit 104 and the first photoelectric conversion unit 105 . Specifically, lithography and etching techniques are used to remove unnecessary materials for patterning. In some embodiments, the above insulating layer may serve as an etch stop layer. In some embodiments, the electro-optic conversion unit includes one or a plurality of modulators, and the plurality of modulators may constitute a modulator array. The photoelectric conversion unit includes one or a plurality of photodetectors, and the plurality of photodetectors can form a detector array. For simplicity, only one modulator and one detector are shown in FIG. 7 .

In the above S22, as shown in FIG. 8, a dielectric layer 106 is deposited on the wafer on which the optical waveguide unit 103, the first electro-optical conversion unit 104 and the first photoelectric conversion unit 105 are formed, so as to cover the optical waveguide unit 103 , the first electro-optical conversion unit 104 , the first photoelectric conversion unit 105 and the wafer. Specifically, the dielectric layer 106 is formed on the optical waveguide unit 103 , the first electro-optical conversion unit 104 , the first photoelectric conversion unit 105 , and the insulating layer 602 by deposition. The material of the above-mentioned dielectric layer and the material of the insulating layer may be the same.

In the above S23, as shown in FIG. 8 , a first opening and a second opening are formed in the dielectric layer 106 . The above-mentioned first opening and second opening may be formed by using an etching technique, and the number of the first opening and the second opening may be one or plural according to connection requirements.

In some embodiments, the dielectric layer 106 is a multi-layer structure formed by a plurality of sub-dielectric layers, multiple conductive layers may be formed in the dielectric layer, and the conductive layers are connected by conductive materials in the openings. For example, the first sub-dielectric layer is deposited first, then the first conductive layer is formed, then the second sub-dielectric layer is deposited, then the second conductive layer is formed, then the third sub-dielectric layer is formed, and the third conductive layer is formed. , and then form the fourth sub-dielectric layer. Wherein, in the first to third conductive layers, different conductive layers are interconnected through the conductive material in the opening, and each conductive layer may be a patterned metal material layer.

In the above S24, as shown in FIG. 8, the first electrical connection structure 101a of the first conductive wiring unit 101 can be formed in the first opening and the second conductive wiring can be formed in the second opening by depositing conductive material. The second electrical connection structure 102 a of the unit 102 . The first electrical connection structure passes through at least part of the dielectric layer 106 ; the first electrical connection structure passes through at least part of the dielectric layer 106 .

After the conductive material is deposited, the excess conductive material can be removed along the mounting surface of the dielectric layer through a planarization process of chemical mechanical polishing or mechanical grinding, so that the first electrical connection structure and the second electrical connection structure are connected to the dielectric layer. The mounting surface is flush.

Subsequently, the first electric chip and the second electric chip are mounted on each photonic integrated circuit on the wafer, specifically, on the mounting surface of the dielectric layer 106/photonic integrated circuit corresponding to each photonic integrated circuit The first electric chip and the second electric chip are installed in the region, that is, the area corresponding to each photonic integrated circuit on the mounting surface of the dielectric layer 106/photonic integrated circuit, the first electric chip and the second electric chip The wafer is electrically connected to the first electrical connection structure and the second electrical connection structure in the area.

Subsequently, an encapsulant may also be formed on the dielectric layer 106 to bury or cover the first transistor and the second transistor. Afterwards, the encapsulant can be cured and can be planarized.

In some embodiments, a process of thinning the back base layer 601 may be included.

In some embodiments, S604 can be performed after S603, that is, before dividing the photonic integrated circuit wafer, the first electric chip and the second electric chip are installed in batches. The first electric chip and the second electric chip are packaged in batches. At this time, only the photonic integrated circuit wafer needs to be manufactured, and the photonic integrated circuit does not need to be formed into a single chip.

In addition, optionally, the process of dividing the wafer can be carried out first, so as to first form an independent photonic integrated circuit/an independent optical interconnect including a photonic integrated circuit, and then perform the first electric chip and the second electric chip The installation process is to install the first electronic chip and the second electronic chip on the independent photonic integrated circuit.

Optionally, a plurality of independent photonic integrated circuits can be packaged to a certain extent to form a plurality of independent photonic integrated circuit chips (including bare chips), and the photonic integrated circuit chip is used as a chip for optical interconnection, namely Optical interconnects may use photonic integrated circuit chips. Specifically, as shown in Figure 10, the method includes:

S1001. Providing a wafer.

S1002. Form a plurality of photonic integrated circuits on the wafer.

Wherein, each of the plurality of photonic integrated circuits includes a first conductive wiring unit, a second conductive wiring unit, an optical waveguide unit, a first electro-optical conversion unit, and a first photoelectric conversion unit; the first electro-optical conversion unit and the The first photoelectric conversion unit is respectively coupled to the optical waveguide unit; the first conductive wiring unit is electrically connected to the first electro-optic conversion unit; the second conductive wiring unit is electrically connected to the first photoelectric conversion unit.

S1003, dividing the wafer to obtain a plurality of independent photonic integrated circuits.

Wherein, the plurality of photonic integrated circuits are divided into independent photonic integrated circuits, so that each photonic integrated circuit chip includes an independent photonic integrated circuit.

S1004. Install a first electric chip and a second electric chip on each of the independent photonic integrated circuit chips, so that the first electric chip is electrically connected to the first conductive wiring unit, and the second electric chip It is electrically connected with the second conductive wiring unit.

As an example, S1004 is not performed after S1003.

Wherein, the first electric chip and the second electric chip can communicate through the first conductive wiring unit, the first electro-optical conversion unit, the optical waveguide unit, the first photoelectric conversion unit and the second conductive wiring unit.

For the specific implementation of the above step S1002, reference may be made to the corresponding content in the above embodiments, and details are not repeated here.

In some embodiments, the optical interconnects mentioned above, such as the first optical interconnect, and the photonic integrated circuit in the second optical interconnect can all adopt the manufacturing steps of related photonic integrated circuits in the above method formed, and according to the method mentioned above, at least one transistor is disposed on the first optical interconnection, and at least one transistor is disposed on the second optical interconnection.

In some embodiments, further comprising the step of optically connecting the first optical interconnection with the second optical interconnection using a plurality of optical fibers. Alternatively, the optical fibers may be replaced with a plurality of optical waveguides for realizing the optical connection between the first optical interconnection and the second optical interconnection.

In some embodiments, a method of manufacturing an optical interconnect device includes disposing an optical interconnect on a carrier substrate. Exemplarily, the first optical interconnection and the second optical interconnection may be disposed on the carrier substrate.

What needs to be explained here is that for the details of the steps in the method provided in the embodiments of the present application that are not described in detail, refer to the corresponding contents in the above embodiments, and details are not repeated here. In addition, in addition to the above-mentioned steps, the methods provided in the embodiments of the present application may also include some or all of the other steps in the above-mentioned embodiments. For details, please refer to the corresponding content of the above-mentioned embodiments, and details will not be repeated here.

Those skilled in the art should understand that what is disclosed above is only the embodiment of the present invention, and of course the scope of rights of the present invention cannot be limited by this. The equivalent changes made according to the embodiment of the present invention still fall within the scope of the patent application of the present invention. range.

100: Carrier substrate 101: the first conductive wiring unit 101a: first electrical connection structure 102: the second conductive wiring unit 102a: second electrical connection structure 103: semiconductor layer 603 104: The first electro-optic conversion unit 105: The first photoelectric conversion unit 106: Dielectric layer 201, 202: optical interconnection A, B, C, D, E, F, G, H: electric chip 300: Optical coupling structure 400: beam splitter M1, M2, M3, M4: modulator array D1, D2, D3, D4: detector array 401: Microring modulator 402: PN junction structure 403: Ring waveguide 404: heating electrode 405: Light detector 406: waveguide terminal 407: Optical waveguide 501: Microring filter detector 502: heating electrode 503: Ring waveguide 504: signal light detector 505:Waveguide terminal 507: Optical waveguide 601: back base layer 601 602: back base layer 601 603: semiconductor layer 603

FIG. 1 is a schematic structural view showing an optical interconnection device according to an exemplary embodiment of the present invention. FIG. 2 is a schematic diagram showing an optical interconnection of the optical interconnection device shown in FIG. 1 . FIG. 3 shows the connection topology of the transistors in the optical interconnection device shown in FIG. 2 . Fig. 4 is a schematic structural diagram showing a modulator array in an exemplary electro-optical conversion unit according to an embodiment of the present invention. FIG. 5 is a schematic structural diagram showing a detector array in an exemplary photoelectric conversion unit according to an embodiment of the present invention. FIG. 6 is a schematic cross-sectional view of a related structure when manufacturing a photonic integrated circuit according to an embodiment of the present application. FIG. 7 is a schematic cross-sectional view of a related structure when manufacturing a photonic integrated circuit according to an embodiment of the present application. FIG. 8 is a schematic cross-sectional view of a related structure when manufacturing a photonic integrated circuit according to an embodiment of the present application.

100: Carrier substrate

201, 202: optical interconnection

A, B, C, D, E, F, G, H: electric chips

Claims (21)

An optical interconnection device, comprising: a plurality of wafers, including a first wafer and a second wafer; and a first optical interconnect having a plurality of optical waveguides; Wherein, the first electric chip and the second electric chip realize the communication connection through the optical waveguide of the first optical interconnection. The optical interconnection device as claimed in item 1, wherein the optical interconnection device further comprises: an electro-optical conversion unit, which is connected to the first electronic chip, and is used to carry the information carried by the electrical signal of the first electronic chip into an optical signal, and the optical signal is transmitted in the optical waveguide of the first optical interconnect; as well as A photoelectric conversion unit, which is connected to the second electric chip, and converts the received optical signal into an electrical signal transmitted to the second electric chip; \wherein, the transmission path of the optical signal from the electro-optical conversion unit to the photoelectric conversion unit It includes: an optical waveguide in the first optical interconnection. The optical interconnection device as claimed in claim 2, wherein the optical interconnection device further includes a carrier substrate; the first optical interconnect is disposed on the carrier substrate; and The transistors are disposed on the first optical interconnect; Wherein, the first optical interconnection includes a photonic integrated circuit, and the photonic integrated circuit includes the optical waveguides, the electro-optical conversion unit, and the photoelectric conversion unit. The optical interconnection device as claimed in item 2, wherein the optical interconnection device further comprises: a plurality of optical fibers; and A second optical interconnection having a plurality of optical waveguides, the second optical interconnection is interconnected with the first optical interconnection through the optical fibers; Wherein, the transmission path of the optical signal from the electro-optical conversion unit to the photoelectric conversion unit includes: successively passing through the optical waveguide in the first optical interconnection, at least one of the optical fibers, and the second optical interconnection The transmission path of the optical waveguide. The optical interconnection device as claimed in claim 4, wherein the optical interconnection device further includes a carrier substrate; The first optical interconnect and the second optical interconnect are disposed on the carrier substrate; The first electric chip is disposed on the first optical interconnection, the first optical interconnection includes a photonic integrated circuit, and the photonic integrated circuit includes the optical waveguides and the electro-optical conversion unit; and The second transistor is disposed on the second optical interconnection, the second optical interconnection includes a photonic integrated circuit, and the photonic integrated circuit of the second optical interconnection includes the photoelectric conversion unit. The optical interconnection device as claimed in item 3, wherein the photonic integrated circuit of the first optical interconnection further includes a dielectric layer, a first conductive wiring unit, and a second conductive wiring unit; The plurality of optical waveguides, the electro-optic conversion unit and the photoelectric conversion unit in the photonic integrated circuit are covered by the dielectric layer; The first conductive wiring unit is configured to electrically connect the electro-optical conversion unit to the first electronic chip; The second conductive wiring unit is configured to electrically connect the photoelectric conversion unit to the second electronic chip; The first conductive wiring unit includes a first electrical connection structure passing through at least part of the dielectric layer; and The second conductive wiring unit includes a second electrical connection structure, and the second electrical connection structure passes through at least part of the dielectric layer. The optical interconnection device as claimed in claim 6, wherein The electro-optical conversion unit includes a modulator array, which modulates the information carried by the electrical signal of the first transistor into optical signals of different wavelengths and transmits them in a wavelength division multiplexing manner; and The photoelectric conversion unit includes a detector array, which performs wave division and multiplexing on the received optical signal and converts it into an electrical signal transmitted to the second electric chip. The optical interconnection device as claimed in any one of claims 1, 6-7, wherein the modulator array includes a plurality of microring modulators; and/or The detector array includes a plurality of microring filter detectors. The optical interconnection device as recited in claim 8, wherein the electrical chips comprise one or more chiplets. The optical interconnection device as claimed in claim 9, wherein the first and second chips are mounted in a wafer-level packaging process. An optical interconnection device, comprising: The first transistor, the second transistor; a first optical interconnect; The first transistor and the second transistor are disposed on the first optical interconnect; The first optical interconnect comprises a photonic integrated circuit comprising: a plurality of optical waveguides; a first electro-optical conversion unit, which is connected to the first electric chip, and is used to carry the information carried by the electric signal of the first electric chip into the first optical signal; a first photoelectric conversion unit connected to the second transistor and used to convert the first optical signal into an electrical signal transmitted to the second transistor; a second electro-optical conversion unit, which is connected to the second electric chip, and is used to carry the information carried by the electric signal of the second electric chip into the second optical signal; and a second photoelectric conversion unit connected to the first transistor for converting the second optical signal into an electrical signal transmitted to the first transistor; Wherein, the transmission path of the first optical signal from the first electro-optical conversion unit to the first photoelectric conversion unit includes: at least one of the optical waveguides in the first optical interconnection; and Wherein, the transmission path of the second optical signal from the second electro-optical conversion unit to the second photoelectric conversion unit includes: at least one of the optical waveguides in the first optical interconnection. The optical interconnection device as claimed in item 11, wherein the optical interconnection device further comprises a second optical interconnection, a third transistor and a plurality of optical fibers, wherein the third transistor is arranged on the second optical interconnection On the connector, the optical fibers optically connect the first optical interconnection and the second optical interconnection; The photonic integrated circuit of the first optical interconnection further includes a third electro-optic conversion unit connected to the first electric chip, and used to carry information carried by the electric signal of the first electric chip to a third optical signal; as well as The second optical interconnection includes a photonic integrated circuit, the photonic integrated circuit of the second optical interconnection includes a plurality of optical waveguides, and a third photoelectric conversion unit, which is connected to the third transistor, is used to connect the converting the third optical signal into an electrical signal transmitted to the third transistor; Wherein, the transmission path of the third optical signal from the third electro-optical conversion unit to the third photoelectric conversion unit includes: the optical waveguide in the first optical interconnection, at least one optical fiber in the optical fibers, the second Optical waveguides in optical interconnects. The optical interconnection device as claimed in claim 11 or 12, wherein the photonic integrated circuit of the first optical interconnection further includes: a dielectric layer, a plurality of conductive wiring units; The dielectric layer covers the optical waveguides, the first electro-optical conversion unit, the first photoelectric conversion unit, the second electro-optic conversion unit, and the second photoelectric conversion unit in the photonic integrated circuit of the first optical interconnection unit; The conductive wiring units are configured to electrically connect the first electro-optical conversion unit, the first photoelectric conversion unit, the second electro-optic conversion unit, and the second photoelectric conversion unit with corresponding electric chips; and The conductive wiring units include a plurality of electrical connection structures, and each of the electrical connection structures passes through at least part of the dielectric layer. The optical interconnection device according to claim 13, wherein the first electro-optical conversion unit and the second electro-optic conversion unit each include one or a plurality of optical modulators, the first photoelectric conversion unit, and the second photoelectric conversion unit Each includes one or a plurality of photodetectors. The optical interconnection device of claim 14, wherein the optical modulator comprises a microring modulator; and/or the photodetector comprises a microring filter detector. The optical interconnection device as claimed in claim 14, wherein the first die, the second die, and the third die include chiplets. An optical interconnection device, comprising: The first optical interconnection includes a first photonic integrated circuit, the first photonic integrated circuit includes a first plurality of electro-optical conversion units, a first plurality of optical waveguides, and a first plurality of photoelectric conversion units; The second optical interconnection includes a second photonic integrated circuit, the second photonic integrated circuit includes a second plurality of electro-optical conversion units, a second plurality of optical waveguides, and a second plurality of photoelectric conversion units; a first plurality of transistors disposed on the first optical interconnect; a second plurality of transistors disposed on the second optical interconnect; The first electro-optic conversion units are configured such that each of the first electro-optic chips corresponds to at least one electro-optic conversion unit; The first photoelectric conversion units are configured such that each of the first transistors corresponds to at least one photoelectric conversion unit; and The first optical waveguides are configured to: for any two electric chips among the first electric chips, optically connect an electro-optic conversion unit corresponding to one of the electric chips to a photoelectric conversion unit corresponding to another electric chip , so that any two of the first transistors can communicate. The optical interconnection device of claim 17, wherein the first optical interconnection is optically connected to the second optical interconnection; and At least one of the first chips communicates with at least one of the second chips through the first optical interconnect and the second optical interconnect. The optical interconnection device as claimed in claim 18, wherein the first optical interconnection is optically connected to the second optical interconnection through a plurality of optical fibers or a plurality of optical waveguides, so that the At least one electric chip communicates with at least one electric chip among the second electric chips. The optical interconnection device according to any one of claims 18 or 19, wherein the first photonic integrated circuit further comprises: a dielectric layer, a plurality of conductive wiring units; The dielectric layer covers the optical waveguides, the first electro-optical conversion units, and the first photoelectric conversion units in the first photonic integrated circuit; Each of the conductive wiring units is electrically connected to each of the first electro-optical conversion units, or is electrically connected to each of the first photoelectric conversion units; the conductive wiring units include a plurality of electrical connection structures each passing through at least part of the dielectric layer; and The conductive wiring units are electrically connected to the first plurality of electric chips, so as to electrically connect each of the first photoelectric conversion units to the corresponding electric chip, or to connect each of the first photoelectric conversion units to the corresponding electric chip. Electrically connected to the corresponding transistor. The method for manufacturing an optical interconnection device according to any one of claims 1-20, comprising: provide wafers; forming a plurality of photonic integrated circuits on the wafer; Wherein, each of these photonic integrated circuits may include a plurality of optical waveguides, and an electro-optical conversion unit and a photoelectric conversion unit; mounting the required at least one die on each of the photonic integrated circuits; and The wafer is divided to obtain a plurality of independent optical interconnection devices.

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