TW202319739A - Inspection method and inspection system of electron beam inspection image - Google Patents

Inspection method and inspection system of electron beam inspection image Download PDF

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TW202319739A
TW202319739A TW110140924A TW110140924A TW202319739A TW 202319739 A TW202319739 A TW 202319739A TW 110140924 A TW110140924 A TW 110140924A TW 110140924 A TW110140924 A TW 110140924A TW 202319739 A TW202319739 A TW 202319739A
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image
electron beam
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quality
electronic device
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TWI780973B (en
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葉品君
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力晶積成電子製造股份有限公司
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Abstract

An inspection method of an electron beam inspection image including the following steps is provided. The electron beam inspection machine is used to scan a wafer to be tested to collect run time images. An electronic device is used to score image quality of each of the run time images to obtain a quality score of each of the run time images. The electronic device is used to compare each of the run time images with a standard image to obtain a matching score of each of the run time images. The electronic device is used to automatically determine whether the run time image is available according to the quality score and the matching score of the run time image.

Description

電子束檢測影像的檢測方法與檢測系統Detection method and detection system for electron beam detection image

本發明實施例是有關於一種影像的檢測方法與檢測系統,且特別是有關於一種電子束檢測影像的檢測方法與檢測系統。Embodiments of the present invention relate to an image detection method and a detection system, and in particular to an electron beam detection image detection method and detection system.

在半導體元件的缺陷檢測技術中,發展出一種利用電子束來檢測缺陷的方法。然而,在目前的電子束檢測(electron beam inspection,EBI)法中,仍有許多步驟需要使用人工判定影像是否可用,因此會增加製程時間,而造成產能下降。In defect detection technology of semiconductor elements, a method of detecting defects using electron beams has been developed. However, in the current electron beam inspection (EBI) method, there are still many steps that need to manually determine whether the image is usable, which increases the process time and reduces the throughput.

本發明提供一種電子束檢測影像的檢測方法與檢測系統,其可縮短製程時間,進而提升產能。The invention provides a detection method and a detection system for an electron beam detection image, which can shorten the process time and further increase the production capacity.

本發明提出一種電子束檢測影像的檢測方法,包括以下步驟。使用電子束檢測機台對待測晶圓進行掃描,以收集多個運行時間影像(run time image)。使用電子裝置對每個運行時間影像的影像品質進行評分,以獲得每個運行時間影像的品質分數。使用電子裝置將每個運行時間影像與標準影像(golden image)進行比對,以獲得每個運行時間影像的匹配分數。使用電子裝置依照運行時間影像的品質分數與匹配分數自動判定運行時間影像是否可用。The invention proposes a detection method for electron beam detection image, which includes the following steps. The wafer under test is scanned using an electron beam inspection tool to collect multiple run time images. The image quality of each runtime image is scored electronically to obtain a quality score for each runtime image. Each run-time image is electronically compared to a standard image (golden image) to obtain a match score for each run-time image. The electronic device is used to automatically determine whether the runtime image is available according to the quality score and the matching score of the runtime image.

依照本發明的一實施例所述,在上述電子束檢測影像的檢測方法中,使用電子束檢測機台收集多個運行時間影像的方式可包括在待測晶圓上的多個預定位置進行收集。According to an embodiment of the present invention, in the above inspection method of electron beam inspection images, the method of using the electron beam inspection machine to collect a plurality of run-time images may include collecting at a plurality of predetermined positions on the wafer to be inspected .

依照本發明的一實施例所述,在上述電子束檢測影像的檢測方法中,影像品質例如是聚焦品質、對比度品質、亮度品質或其組合。According to an embodiment of the present invention, in the detection method of the electron beam detection image, the image quality is, for example, focus quality, contrast quality, brightness quality or a combination thereof.

依照本發明的一實施例所述,在上述電子束檢測影像的檢測方法中,使用電子裝置自動判定運行時間影像是否可用的方法可包括檢查運行時間影像的品質分數是否達到要求,以及檢查運行時間影像的匹配分數是否達到要求。According to an embodiment of the present invention, in the above-mentioned electron beam detection image detection method, the method of using an electronic device to automatically determine whether the runtime image is available may include checking whether the quality score of the runtime image meets the requirements, and checking whether the runtime image is available. Whether the matching score of the image meets the requirements.

依照本發明的一實施例所述,在上述電子束檢測影像的檢測方法中,更可包括以下步驟。將標準影像匯入電子裝置。According to an embodiment of the present invention, the above-mentioned electron beam detection image detection method may further include the following steps. Import standard images to electronic devices.

本發明提出一種電子束檢測影像的檢測系統,包括電子束檢測機台與電子裝置。電子束檢測機台用以對待測晶圓進行掃描,以收集多個運行時間影像。電子裝置耦接於電子束檢測機台,且至少執行以下操作。對每個運行時間影像的影像品質進行評分,以獲得每個運行時間影像的品質分數。將每個運行時間影像與標準影像進行比對,以獲得每個運行時間影像的匹配分數。依照運行時間影像的品質分數與匹配分數自動判定運行時間影像是否可用。The invention proposes a detection system for electron beam detection image, which includes an electron beam detection machine and an electronic device. The electron beam inspection tool is used to scan the wafer under test to collect multiple run-time images. The electronic device is coupled to the electron beam inspection machine and at least performs the following operations. Score the image quality of each runtime image to obtain a quality score for each runtime image. Each runtime image is compared to a standard image to obtain a match score for each runtime image. Automatically determine whether a runtime image is available or not based on the quality score and matching score of the runtime image.

依照本發明的一實施例所述,在上述電子束檢測影像的檢測系統中,電子裝置的數量可為一個。According to an embodiment of the present invention, in the detection system for detecting images with electron beams, the number of electronic devices may be one.

依照本發明的一實施例所述,在上述電子束檢測影像的檢測系統中,電子裝置的數量可為多個。According to an embodiment of the present invention, in the detection system for detecting images with electron beams, the number of electronic devices may be multiple.

依照本發明的一實施例所述,在上述電子束檢測影像的檢測系統中,電子裝置可整合於電子束檢測機台中。According to an embodiment of the present invention, in the inspection system for the above-mentioned electron beam inspection image, the electronic device can be integrated in the electron beam inspection machine.

依照本發明的一實施例所述,在上述電子束檢測影像的檢測系統中,電子裝置可位在電子束檢測機台的外部。According to an embodiment of the present invention, in the above inspection system for electron beam inspection image, the electronic device can be located outside the electron beam inspection machine.

基於上述,在本發明所提出的電子束檢測影像的檢測方法與檢測系統中,使用電子束檢測機台收集多個運行時間影像,藉由電子裝置獲得每個運行時間影像的品質分數與匹配分數,且使用電子裝置依照運行時間影像的品質分數與匹配分數自動判定運行時間影像是否可用。因此,可減少需要使用人工判定影像是否可用的步驟,因此可減少製程時間,進而提升產能。Based on the above, in the detection method and detection system of the electron beam detection image proposed by the present invention, the electron beam detection machine is used to collect a plurality of running time images, and the quality score and matching score of each running time image are obtained by the electronic device , and the electronic device is used to automatically determine whether the runtime image is available according to the quality score and the matching score of the runtime image. Therefore, it is possible to reduce the steps of manually determining whether the image is available, thereby reducing the processing time and increasing the throughput.

為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail together with the accompanying drawings.

圖1為根據本發明一實施例的電子束檢測影像的檢測系統的示意圖。FIG. 1 is a schematic diagram of an electron beam detection image detection system according to an embodiment of the present invention.

請參照圖1,電子束檢測影像的檢測系統10包括電子束檢測機台100與電子裝置102。電子束檢測機台100用以對待測晶圓進行掃描,以收集多個運行時間影像(run time image)。在本實施例中,電子束檢測機台100收集多個運行時間影像的方式可包括在待測晶圓上的多個預定位置進行收集。Referring to FIG. 1 , an inspection system 10 for electron beam inspection image includes an electron beam inspection machine 100 and an electronic device 102 . The electron beam inspection machine 100 is used for scanning the wafer to be tested to collect a plurality of run time images. In this embodiment, the method of collecting multiple run-time images by the electron beam inspection tool 100 may include collecting multiple predetermined positions on the wafer to be tested.

電子裝置102可包括記憶體104與處理器106。記憶體104可用以儲存標準影像(golden image)與運行時間影像,以供處理器106存取,進而實現本發明各實施例所述的相關手段與電子束檢測影像的檢測方法。處理器106耦接於記憶體104。在本實施例中,處理器106可為圖形處理單元(graphics processing unit,GPU)、影像處理器(image signal processor,ISP)、中央處理單元(central processing unit,CPU)或是其他可程式化之一般用途或特殊用途的微處理器(microprocessor)、數位訊號處理器(digital signal processor,DSP)、可程式化控制器、特殊應用積體電路(application specific integrated circuits,ASIC)、可程式化邏輯裝置(programmable logic device,PLD)、其他類似處理器或這些處理器電路的組合。The electronic device 102 can include a memory 104 and a processor 106 . The memory 104 can be used to store a standard image (golden image) and a run-time image for access by the processor 106, thereby realizing the related means and the detection method of the electron beam detection image described in various embodiments of the present invention. The processor 106 is coupled to the memory 104 . In this embodiment, the processor 106 may be a graphics processing unit (graphics processing unit, GPU), an image processor (image signal processor, ISP), a central processing unit (central processing unit, CPU) or other programmable General purpose or special purpose microprocessor (microprocessor), digital signal processor (digital signal processor, DSP), programmable controller, application specific integrated circuits (application specific integrated circuits, ASIC), programmable logic device (programmable logic device, PLD), other similar processors, or a combination of these processor circuits.

電子裝置102耦接於電子束檢測機台100,且至少執行以下操作。舉例來說,可使用電子裝置102的處理器106來執行以下操作。電子裝置102對每個運行時間影像的影像品質進行評分,以獲得每個運行時間影像的品質分數,其中影像品質例如是聚焦品質、對比度品質、亮度品質或其組合。電子裝置102將每個運行時間影像與標準影像進行比對,以獲得每個運行時間影像的匹配分數。電子裝置102依照運行時間影像的品質分數與匹配分數自動判定運行時間影像是否可用。此外,電子裝置102自動判定運行時間影像是否可用的方法可包括以下步驟。電子裝置102檢測運行時間影像的品質分數是否達到要求,以及檢測所述運行時間影像的所述匹配分數是否達到要求。The electronic device 102 is coupled to the electron beam inspection machine 100 and at least performs the following operations. For example, the processor 106 of the electronic device 102 can be used to perform the following operations. The electronic device 102 scores the image quality of each runtime image to obtain a quality score for each runtime image, where the image quality is, for example, focus quality, contrast quality, brightness quality or a combination thereof. The electronic device 102 compares each runtime image with the standard image to obtain a matching score for each runtime image. The electronic device 102 automatically determines whether the runtime image is available according to the quality score and the matching score of the runtime image. In addition, the method for the electronic device 102 to automatically determine whether the runtime image is available may include the following steps. The electronic device 102 detects whether the quality score of the runtime image meets a requirement, and detects whether the matching score of the runtime image meets a requirement.

此外,電子裝置102的數量可為一個或多個。另外,電子裝置102可整合於電子束檢測機台100中或位在電子束檢測機台100的外部。在一些實施例中,電子裝置102的數量可為多個,其中部分電子裝置102可整合於電子束檢測機台100中,且部分電子裝置102可位在電子束檢測機台100的外部。在一些實施例中,電子裝置102的數量可為一個,且電子裝置102可整合於電子束檢測機台100中。在一些實施例中,電子裝置102的數量可為一個,且電子裝置102可位在電子束檢測機台100的外部。In addition, the number of electronic devices 102 may be one or more. In addition, the electronic device 102 can be integrated in the electron beam inspection machine 100 or located outside the electron beam inspection machine 100 . In some embodiments, the number of electronic devices 102 may be multiple, and some of the electronic devices 102 may be integrated in the electron beam inspection machine 100 , and some of the electronic devices 102 may be located outside the electron beam inspection machine 100 . In some embodiments, the number of the electronic device 102 may be one, and the electronic device 102 may be integrated in the electron beam inspection machine 100 . In some embodiments, the number of the electronic device 102 may be one, and the electronic device 102 may be located outside the electron beam inspection machine 100 .

圖2為根據本發明一實施例的電子束檢測影像的檢測方法的流程圖。圖3A為根據本發明一實施例的在待測晶圓上的多個預定位置的多個運行時間影像的品質分數的示意圖。圖3B為根據本發明一實施例的在待測晶圓上的多個預定位置的多個運行時間影像的匹配分數的示意圖。圖4A為根據本發明一實施例的標準影像的示意圖。圖4B為根據本發明一實施例的運行時間影像的示意圖。FIG. 2 is a flowchart of an electron beam detection image detection method according to an embodiment of the present invention. FIG. 3A is a schematic diagram of quality scores of multiple run-time images at multiple predetermined locations on the wafer under test according to an embodiment of the present invention. FIG. 3B is a schematic diagram of matching scores of multiple run-time images at multiple predetermined locations on the wafer under test according to an embodiment of the present invention. FIG. 4A is a schematic diagram of a standard image according to an embodiment of the invention. FIG. 4B is a schematic diagram of a runtime image according to an embodiment of the invention.

請參照圖1與圖2,可進行步驟S100,將標準影像匯入電子裝置102。舉例來說,可將標準影像儲存在電子裝置102的記憶體104中。Referring to FIG. 1 and FIG. 2 , step S100 can be performed to import the standard image into the electronic device 102 . For example, the standard image can be stored in the memory 104 of the electronic device 102 .

接著,進行步驟S102,使用電子束檢測機台100對待測晶圓進行掃描,以收集多個運行時間影像。此外,使用電子束檢測機台100收集多個運行時間影像的方式可包括在待測晶圓上的多個預定位置進行收集。Next, proceed to step S102 , using the electron beam inspection machine 100 to scan the wafer to be tested to collect a plurality of runtime images. In addition, collecting multiple run-time images using the electron beam inspection tool 100 may include collecting multiple predetermined locations on the wafer to be tested.

然後,進行步驟S104,使用電子裝置102對每個運行時間影像的影像品質進行評分,以獲得每個運行時間影像的品質分數。影像品質例如是聚焦品質、對比度品質、亮度品質或其組合。舉例來說,運行時間影像的品質分數可依據運行時間影像的影像品質評定為0分至10分,且品質分數越高表示運行時間影像的影像品質越好,但本發明並不以此為限。請參照圖3A,圖3A示出在待測晶圓W上的多個預定位置的運行時間影像的品質分數。在一些實施例中,品質分數可為聚焦品質、對比度品質與亮度品質的綜合評分。在一些實施例中,品質分數可為聚焦品質、對比度品質或亮度品質的個別評分。Then, proceed to step S104 , using the electronic device 102 to score the image quality of each runtime image to obtain a quality score of each runtime image. The image quality is, for example, focus quality, contrast quality, brightness quality or a combination thereof. For example, the quality score of the runtime image can be rated from 0 to 10 according to the image quality of the runtime image, and the higher the quality score, the better the image quality of the runtime image, but the invention is not limited thereto. . Please refer to FIG. 3A . FIG. 3A shows quality scores of runtime images of multiple predetermined locations on the wafer W to be tested. In some embodiments, the quality score may be a composite score of focus quality, contrast quality and brightness quality. In some embodiments, the quality scores may be individual scores for focus quality, contrast quality, or brightness quality.

此外,進行步驟S106,使用電子裝置102將每個運行時間影像與標準影像進行比對,以獲得每個運行時間影像的匹配分數。舉例來說,運行時間影像的匹配分數可依據運行時間影像與標準影像的匹配程度評定為0分至10分,且匹配分數越高表示運行時間影像與標準影像的匹配程度越高,但本發明並不以此為限。舉例來說,圖4B的運行時間影像300與圖4A的標準影像200具有很大的差異,亦即圖4B的運行時間影像300與圖4A的標準影像200的匹配程度低,因此可將運行時間影像300的匹配分數評為0分。請參照圖3B,圖3B示出在待測晶圓W上的多個預定位置的運行時間影像的匹配分數。In addition, step S106 is performed, using the electronic device 102 to compare each runtime image with the standard image to obtain a matching score for each runtime image. For example, the matching score of the runtime image can be rated from 0 to 10 according to the degree of matching between the runtime image and the standard image, and a higher matching score indicates a higher degree of matching between the runtime image and the standard image, but the present invention It is not limited to this. For example, the running time image 300 of FIG. 4B is very different from the standard image 200 of FIG. 4A , that is, the matching degree between the running time image 300 of FIG. 4B and the standard image 200 of FIG. Image 300 has a matching score of 0. Please refer to FIG. 3B . FIG. 3B shows matching scores of run-time images at multiple predetermined locations on the wafer W to be tested.

在一些實施例中,可先進行步驟S104,再進行步驟S106。在一些實施例中,可先進行步驟S106,再進行步驟S104。在一些實施例中,可同時進行步驟S104與步驟S106。在本實施例中,在進行步驟S102之前,進行步驟S100,但本發明並不以此為限。只要在進行步驟S106之前,進行步驟S100,即屬於本發明所涵蓋的範圍。In some embodiments, step S104 may be performed first, and then step S106 may be performed. In some embodiments, step S106 may be performed first, and then step S104 may be performed. In some embodiments, step S104 and step S106 can be performed simultaneously. In this embodiment, step S100 is performed before step S102 is performed, but the present invention is not limited thereto. As long as step S100 is performed before step S106 is performed, it falls within the scope of the present invention.

接下來,進行步驟S108,使用電子裝置102依照運行時間影像的品質分數與匹配分數自動判定運行時間影像是否可用。使用電子裝置102自動判定運行時間影像是否可用的方法可包括檢查運行時間影像的品質分數是否達到要求,以及檢查運行時間影像的匹配分數是否達到要求。若運行時間影像的品質分數與匹配分數同時達到所要求的合格分數以上,則判定此運行時間影像為可用的影像。若運行時間影像的品質分數與匹配分數未同時達到所要求的合格分數以上,則判定此運行時間影像為不可用的影像。此外,可分別設定品質分數的合格分數與匹配分數的合格分數。亦即,品質分數的合格分數與匹配分數的合格分數可為相同或不同。Next, proceed to step S108 , using the electronic device 102 to automatically determine whether the runtime image is available according to the quality score and the matching score of the runtime image. The method of using the electronic device 102 to automatically determine whether the runtime image is available may include checking whether the quality score of the runtime image meets a requirement, and checking whether the matching score of the runtime image meets a requirement. If both the quality score and the matching score of the runtime image are above the required passing score, the runtime image is determined to be an available image. If the quality score and the matching score of the runtime image do not both reach the required passing score, the runtime image is determined to be an unusable image. In addition, the passing score of the quality score and the passing score of the matching score may be set separately. That is, the qualifying score for the Quality Score and the qualifying score for the Matching Score may be the same or different.

舉例來說,請參照圖3A與圖3B,在將品質分數的合格分數與匹配分數的合格分數均設定為6分的情況下,在待測晶圓W的預定位置P1~P3上收集的運行時間影像為不可用的影像(即,圖3A的品質分數與圖3B的匹配分數中的至少一者未達6分),且在待測晶圓W的其餘預定位置上收集的運行時間影像為可用的影像(即,圖3A的品質分數與圖3B的匹配分數均達到6分以上)。For example, please refer to FIG. 3A and FIG. 3B , under the condition that both the qualified score of the quality score and the qualified score of the matching score are set to 6 points, the operation collected on the predetermined positions P1-P3 of the wafer W to be tested The temporal image is an unusable image (i.e., at least one of the quality score of FIG. 3A and the matching score of FIG. 3B does not reach 6 points), and the run-time images collected on the remaining predetermined positions of the wafer W to be tested are Available images (ie, the quality score of Figure 3A and the matching score of Figure 3B are both above 6 points).

基於上述實施例可知,在電子束檢測影像的檢測方法與電子束檢測影像的檢測系統10中,使用電子束檢測機台100收集多個運行時間影像,藉由電子裝置102獲得每個運行時間影像的品質分數與匹配分數,且使用電子裝置102依照運行時間影像的品質分數與匹配分數自動判定運行時間影像是否可用。因此,可減少需要使用人工判定影像是否可用的步驟,因此可減少製程時間,進而提升產能。此外,若發現不可用的運行時間影像,則表示電子束檢測影像的檢測系統10可能存在的硬體問題(如,電子槍衰退、晶圓載台偏移或其組合等)及/或軟體問題(如,程式問題、參數設定問題或其組合等)。藉此,使用者可及早查明問題並盡速解決問題。Based on the above embodiments, it can be seen that in the electron beam inspection image inspection method and the electron beam inspection image inspection system 10, the electron beam inspection machine 100 is used to collect a plurality of runtime images, and each runtime image is obtained by the electronic device 102. The quality score and the matching score of the runtime image are automatically determined by the electronic device 102 according to the quality score and the matching score of the runtime image. Therefore, it is possible to reduce the steps of manually determining whether the image is available, thereby reducing the processing time and increasing the throughput. In addition, if an unusable run-time image is found, it may indicate a possible hardware problem (e.g., electron gun degradation, wafer stage offset, or a combination thereof) and/or software problem (e.g., e.g. , programming problems, parameter setting problems, or combinations thereof, etc.). In this way, users can identify problems early and solve them as soon as possible.

綜上所述,由於上述實施例的電子束檢測影像的檢測方法與檢測系統可減少需要使用人工判定影像是否可用的步驟,因此可減少製程時間,進而提升產能。To sum up, since the detection method and detection system of the electron beam detection image in the above embodiments can reduce the steps of manually determining whether the image is available, the process time can be reduced, and the production capacity can be increased.

雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed above with the embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the technical field may make some changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention should be defined by the scope of the appended patent application.

10:電子束檢測影像的檢測系統 100:電子束檢測機台 102:電子裝置 104:記憶體 106:處理器 200:標準影像 300:運行時間影像 S100、S102、S104、S106、S108:步驟 W:待測晶圓 P1~P3:預定位置 10: Detection system for electron beam detection image 100:Electron beam inspection machine 102:Electronic device 104: memory 106: Processor 200: standard image 300: runtime image S100, S102, S104, S106, S108: steps W: Wafer to be tested P1~P3: predetermined position

圖1為根據本發明一實施例的電子束檢測影像的檢測系統的示意圖。 圖2為根據本發明一實施例的電子束檢測影像的檢測方法的流程圖。 圖3A為根據本發明一實施例的在待測晶圓上的多個預定位置的多個運行時間影像的品質分數的示意圖。 圖3B為根據本發明一實施例的在待測晶圓上的多個預定位置的多個運行時間影像的匹配分數的示意圖。 圖4A為根據本發明一實施例的標準影像的示意圖。 圖4B為根據本發明一實施例的運行時間影像的示意圖。 FIG. 1 is a schematic diagram of an electron beam detection image detection system according to an embodiment of the present invention. FIG. 2 is a flowchart of an electron beam detection image detection method according to an embodiment of the present invention. FIG. 3A is a schematic diagram of quality scores of multiple run-time images at multiple predetermined locations on the wafer under test according to an embodiment of the present invention. FIG. 3B is a schematic diagram of matching scores of multiple run-time images at multiple predetermined locations on the wafer under test according to an embodiment of the present invention. FIG. 4A is a schematic diagram of a standard image according to an embodiment of the invention. FIG. 4B is a schematic diagram of a runtime image according to an embodiment of the invention.

S100、S102、S104、S106、S108:步驟 S100, S102, S104, S106, S108: steps

Claims (10)

一種電子束檢測影像的檢測方法,包括: 使用電子束檢測機台對待測晶圓進行掃描,以收集多個運行時間影像; 使用電子裝置對每個所述運行時間影像的影像品質進行評分,以獲得每個所述運行時間影像的品質分數; 使用所述電子裝置將每個所述運行時間影像與標準影像進行比對,以獲得每個所述運行時間影像的匹配分數;以及 使用所述電子裝置依照所述運行時間影像的所述品質分數與所述匹配分數自動判定所述運行時間影像是否可用。 A detection method for an electron beam detection image, comprising: Scan the wafer under test using an electron beam inspection tool to collect multiple run-time images; scoring the image quality of each of the runtime images using an electronic device to obtain a quality score for each of the runtime images; comparing each of said run-time images to a standard image using said electronic device to obtain a match score for each of said run-time images; and Using the electronic device to automatically determine whether the runtime image is available according to the quality score and the matching score of the runtime image. 如請求項1所述的電子束檢測影像的檢測方法,其中使用所述電子束檢測機台收集多個所述運行時間影像的方式包括在所述待測晶圓上的多個預定位置進行收集。The detection method of the electron beam inspection image according to claim 1, wherein the method of using the electron beam inspection machine to collect a plurality of the runtime images includes collecting at a plurality of predetermined positions on the wafer to be inspected . 如請求項1所述的電子束檢測影像的檢測方法,其中所述影像品質包括聚焦品質、對比度品質、亮度品質或其組合。The inspection method for electron beam inspection image according to claim 1, wherein the image quality includes focus quality, contrast quality, brightness quality or a combination thereof. 如請求項1所述的電子束檢測影像的檢測方法,其中使用電子裝置自動判定所述運行時間影像是否可用的方法包括: 檢查所述運行時間影像的所述品質分數是否達到要求;以及 檢查所述運行時間影像的所述匹配分數是否達到要求。 The detection method of electron beam detection image according to claim 1, wherein the method of using an electronic device to automatically determine whether the runtime image is available includes: checking whether the quality score of the runtime image meets a requirement; and Checking whether the matching score of the runtime image meets a requirement. 如請求項1所述的電子束檢測影像的檢測方法,更包括: 將所述標準影像匯入所述電子裝置。 The detection method of the electron beam detection image as described in claim 1, further comprising: Importing the standard image into the electronic device. 一種電子束檢測影像的檢測系統,包括: 電子束檢測機台,用以對待測晶圓進行掃描,以收集多個運行時間影像;以及 電子裝置,耦接於所述電子束檢測機台,且至少執行以下操作: 對每個所述運行時間影像的影像品質進行評分,以獲得每個所述運行時間影像的品質分數; 將每個所述運行時間影像與標準影像進行比對,以獲得每個所述運行時間影像的匹配分數;以及 依照所述運行時間影像的所述品質分數與所述匹配分數自動判定所述運行時間影像是否可用。 A detection system for electron beam detection image, comprising: An electron beam inspection tool to scan the wafer under test to collect multiple run-time images; and An electronic device, coupled to the electron beam inspection machine, at least performs the following operations: scoring the image quality of each of the runtime images to obtain a quality score for each of the runtime images; comparing each of said run-time images to a standard image to obtain a match score for each of said run-time images; and Whether the runtime image is available is automatically determined according to the quality score and the matching score of the runtime image. 如請求項6所述的電子束檢測影像的檢測系統,其中所述電子裝置的數量為一個。The detection system for electron beam detection image as claimed in claim 6, wherein the number of said electronic device is one. 如請求項6所述的電子束檢測影像的檢測系統,其中所述電子裝置的數量為多個。The detection system for electron beam detection image as claimed in claim 6, wherein the number of said electronic devices is multiple. 如請求項6所述的電子束檢測影像的檢測系統,其中所述電子裝置整合於所述電子束檢測機台中。The inspection system for electron beam inspection image according to claim 6, wherein the electronic device is integrated in the electron beam inspection machine. 如請求項6所述的電子束檢測影像的檢測系統,其中所述電子裝置位在所述電子束檢測機台的外部。The inspection system for electron beam inspection image according to claim 6, wherein the electronic device is located outside the electron beam inspection machine.
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