TW202314671A - Light emitting panel - Google Patents

Light emitting panel Download PDF

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TW202314671A
TW202314671A TW111109949A TW111109949A TW202314671A TW 202314671 A TW202314671 A TW 202314671A TW 111109949 A TW111109949 A TW 111109949A TW 111109949 A TW111109949 A TW 111109949A TW 202314671 A TW202314671 A TW 202314671A
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light
layer
transmitting
emitting
pixel array
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TW111109949A
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TWI796170B (en
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陳明倫
林俊佑
黃書豪
蔡玉堂
吳佳龍
田堃正
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友達光電股份有限公司
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Priority to CN202210805186.2A priority Critical patent/CN115172402A/en
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Publication of TW202314671A publication Critical patent/TW202314671A/en

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Abstract

A light emitting panel includes a pixel array substrate, a plurality of light emitting components, a black matrix layer and a transparent pattern layer. The pixel array substrate has a plurality of subpixel region and a plurality of transparent region. The light emitting components, the black matrix layer, the transparent pattern layer are disposed on the pixel array substrate. The light emitting components are located on the subpixel regions respectively. The black matrix layer is not distributed within the transparent region. The transparent pattern layer is distributed within the transparent region respectively. The black matrix layer, the transparent pattern layer and the pixel array substrate form a plurality of recesses. The recesses are located above the subpixel region. The light emitting components are located in the recesses respectively. The black matrix layer and the transparent pattern layer jointly surround the light emitting component in at least one of recesses.

Description

發光面板Luminous panel

本發明是有關於一種發光面板,且特別是有關於一種包括黑矩陣層(black matrix layer)的發光面板。The present invention relates to a light-emitting panel, and in particular to a light-emitting panel including a black matrix layer.

現有的顯示面板大多是不透明的,而這種不透明顯示面板在一些應用範圍難免受限。例如,在車用顯示器方面,不透明顯示面板會遮擋駕駛員的視線,所以不透明顯示面板不宜直接裝設於擋風玻璃上而作為抬頭顯示器(Head-Up Display,HUD)。同理,不透明顯示面板也不宜直接裝設於安全帽的面罩上或眼鏡上,從而不適用於一些穿戴裝置(wearable device)。Most of the existing display panels are opaque, and the application of such opaque display panels is inevitably limited. For example, in terms of automotive displays, the opaque display panel will block the driver's line of sight, so the opaque display panel should not be directly installed on the windshield as a Head-Up Display (HUD). Similarly, the opaque display panel is not suitable for being directly installed on the visor of the safety helmet or on the glasses, so it is not suitable for some wearable devices.

本發明至少一實施例提出一種發光面板,其利用透光區與分布於透光區的透光圖案層,以增加本發明至少一實施例所揭示的發光面板的應用範圍。At least one embodiment of the present invention provides a light-emitting panel, which utilizes a light-transmitting region and a light-transmitting pattern layer distributed in the light-transmitting region, so as to increase the application range of the light-emitting panel disclosed in at least one embodiment of the present invention.

本發明至少一實施例所提出的發光面板包括畫素陣列基板、多個發光元件、黑矩陣層以及透光圖案層。畫素陣列基板具有多個次畫素區與多個透光區,其中一個次畫素區位於其中至少兩個相鄰的透光區之間。這些發光元件設置於畫素陣列基板上,並電性連接畫素陣列基板,其中這些發光元件分別位於這些次畫素區上。黑矩陣層設置於畫素陣列基板上,且不分布於這些透光區內。透光圖案層設置於畫素陣列基板上,並分布於這些透光區內,其中黑矩陣層、透光圖案層與畫素陣列基板形成多個凹槽。這些凹槽分別位於這些次畫素區上。這些發光元件分別位於這些凹槽內。黑矩陣層與透光圖案層共同圍繞位於至少一個凹槽內的發光元件。The light-emitting panel proposed by at least one embodiment of the present invention includes a pixel array substrate, a plurality of light-emitting elements, a black matrix layer, and a light-transmitting pattern layer. The pixel array substrate has a plurality of sub-pixel regions and a plurality of light-transmitting regions, wherein one sub-pixel region is located between at least two adjacent light-transmitting regions. The light emitting elements are arranged on the pixel array substrate and electrically connected to the pixel array substrate, wherein the light emitting elements are respectively located on the sub-pixel regions. The black matrix layer is arranged on the pixel array substrate and not distributed in these light-transmitting regions. The light-transmitting pattern layer is arranged on the pixel array substrate and distributed in the light-transmitting regions, wherein the black matrix layer, the light-transmitting pattern layer and the pixel array substrate form a plurality of grooves. The grooves are respectively located on the sub-pixel regions. The light emitting elements are located in the grooves respectively. The black matrix layer and the light-transmitting pattern layer jointly surround the light-emitting element located in at least one groove.

在本發明至少一實施例中,上述發光面板更包括多個填充材料。這些填充材料分別填入於這些凹槽內,其中各個發光元件具有出光頂面,而這些填充材料未覆蓋這些發光元件的出光頂面。In at least one embodiment of the present invention, the light-emitting panel further includes a plurality of filling materials. The filling materials are respectively filled into the grooves, wherein each light-emitting element has a light-emitting top surface, and the filling materials do not cover the light-emitting top surfaces of the light-emitting elements.

在本發明至少一實施例中,這些填充材料其中至少一者為黑色膠材。In at least one embodiment of the present invention, at least one of the filling materials is black glue.

在本發明至少一實施例中,這些填充材料其中至少一者包括反光材料與吸光層。反光材料填入於凹槽內。吸光層設置於反光材料上,並覆蓋反光材料,其中吸光層圍繞凹槽內的其中一個發光元件。In at least one embodiment of the present invention, at least one of the filling materials includes a light-reflecting material and a light-absorbing layer. The reflective material is filled in the groove. The light-absorbing layer is arranged on the light-reflecting material and covers the light-reflecting material, wherein the light-absorbing layer surrounds one of the light-emitting elements in the groove.

在本發明至少一實施例中,各個發光元件具有發光層,而發光層相對於畫素陣列基板的高度小於反光材料的上表面相對於畫素陣列基板的高度。In at least one embodiment of the present invention, each light-emitting element has a light-emitting layer, and the height of the light-emitting layer relative to the pixel array substrate is smaller than the height of the upper surface of the reflective material relative to the pixel array substrate.

在本發明至少一實施例中,這些填充材料其中至少一者包括透光材料與吸光層。透光材料填入於凹槽內。吸光層設置於透光材料上,並覆蓋透光材料,其中吸光層圍繞凹槽內的其中一個發光元件。In at least one embodiment of the present invention, at least one of the filling materials includes a light-transmitting material and a light-absorbing layer. The light-transmitting material is filled in the groove. The light-absorbing layer is arranged on the light-transmitting material and covers the light-transmitting material, wherein the light-absorbing layer surrounds one of the light-emitting elements in the groove.

在本發明至少一實施例中,各個發光元件具有發光層,而發光層相對於畫素陣列基板的高度小於透光材料的上表面相對於畫素陣列基板的高度。In at least one embodiment of the present invention, each light-emitting element has a light-emitting layer, and the height of the light-emitting layer relative to the pixel array substrate is smaller than the height of the upper surface of the light-transmitting material relative to the pixel array substrate.

在本發明至少一實施例中,上述黑矩陣層凸出於透光圖案層的上表面,而黑矩陣層的上表面與透光圖案層的上表面兩者高度差小於或等於1.5微米。In at least one embodiment of the present invention, the black matrix layer protrudes from the upper surface of the transparent pattern layer, and the height difference between the upper surface of the black matrix layer and the upper surface of the transparent pattern layer is less than or equal to 1.5 microns.

在本發明至少一實施例中,上述畫素陣列基板包括基板以及多個金屬圖案層。這些金屬圖案層設置於基板之上,並且不與透光圖案層重疊,其中在同一個次畫素區中,這些金屬圖案層於基板上的垂直投影完全涵蓋發光元件於基板上的垂直投影。In at least one embodiment of the present invention, the pixel array substrate includes a substrate and a plurality of metal pattern layers. These metal pattern layers are disposed on the substrate and do not overlap with the transparent pattern layer, wherein in the same sub-pixel area, the vertical projection of the metal pattern layers on the substrate completely covers the vertical projection of the light emitting element on the substrate.

在本發明至少一實施例中,上述畫素陣列基板包括基板以及多個金屬圖案層。這些金屬圖案層設置於基板之上,並且不與透光圖案層重疊,其中在同一個次畫素區中,發光元件於基板上的垂直投影至少一部分不與這些金屬圖案層於基板上的垂直投影垂疊。In at least one embodiment of the present invention, the pixel array substrate includes a substrate and a plurality of metal pattern layers. These metal pattern layers are arranged on the substrate and do not overlap with the light-transmitting pattern layer, wherein in the same sub-pixel area, at least a part of the vertical projection of the light-emitting element on the substrate is not perpendicular to the vertical projection of these metal pattern layers on the substrate. Drop shadows.

在本發明至少一實施例中,上述畫素陣列基板包括基板以及多個金屬圖案層。這些金屬圖案層設置於基板之上,並且不與透光圖案層重疊,其中在同一個次畫素區中,這些金屬圖案層於基板上的垂直投影面積大於或等於凹槽於基板上的垂直投影面積的一半。In at least one embodiment of the present invention, the pixel array substrate includes a substrate and a plurality of metal pattern layers. These metal pattern layers are arranged on the substrate and do not overlap with the light-transmitting pattern layer. In the same sub-pixel area, the vertical projected area of these metal pattern layers on the substrate is greater than or equal to the vertical area of the groove on the substrate. half of the projected area.

在本發明至少一實施例中,上述畫素陣列基板包括基板以及多條走線。這些走線設置於基板之上,其中黑矩陣層沿著些走線而延伸,並遮蓋這些走線。In at least one embodiment of the present invention, the pixel array substrate includes a substrate and a plurality of wires. These traces are arranged on the substrate, wherein the black matrix layer extends along these traces and covers these traces.

在本發明至少一實施例中,上述透光圖案層包括多個透光層,而黑矩陣層沿著部分這些走線而圍繞出其中一個透光層,其中至少一個透光層的形狀為L形。In at least one embodiment of the present invention, the above-mentioned light-transmitting pattern layer includes a plurality of light-transmitting layers, and the black matrix layer surrounds one of the light-transmitting layers along some of these lines, wherein at least one of the light-transmitting layers has a shape of L shape.

在本發明至少一實施例中,上述透光圖案層包括多個透光層,而黑矩陣層沿著其中四條走線圍繞各個透光層,其中各個透光層的形狀為不對稱形狀。In at least one embodiment of the present invention, the light-transmitting pattern layer includes a plurality of light-transmitting layers, and the black matrix layer surrounds each light-transmitting layer along four traces, wherein the shape of each light-transmitting layer is asymmetrical.

基於上述,利用透光圖案層與這些透光區,外界光線能穿透以上實施例所揭示的發光面板。相較於現有常見的不透明顯示面板,本發明至少一實施例所揭示的發光面板可具有較廣的應用範圍。例如,以上實施例的發光面板適合製作成車用的抬頭顯示器(HUD),或是適合應用於穿戴裝置。Based on the above, by using the light-transmitting pattern layer and these light-transmitting regions, external light can penetrate the light-emitting panel disclosed in the above embodiments. Compared with conventional opaque display panels, the luminous panel disclosed in at least one embodiment of the present invention can have a wider range of applications. For example, the light-emitting panel of the above embodiments is suitable for making a head-up display (HUD) for a car, or suitable for being applied to a wearable device.

在以下的內文中,為了清楚呈現本案的技術特徵,圖式中的元件(例如層、膜、基板以及區域等)的尺寸(例如長度、寬度、厚度與深度)會以不等比例的方式放大。因此,下文實施例的說明與解釋不受限於圖式中的元件所呈現的數量、尺寸與形狀,而應涵蓋如實際製程及/或公差所導致的尺寸、形狀以及兩者的偏差。例如,圖式所示的平坦表面可以具有粗糙及/或非線性的特徵,而圖式所示的銳角可以是圓的。所以,本案圖式所呈示的元件主要是用於示意,並非旨在精準地描繪出元件的實際形狀,也非用於限制本案的申請專利範圍。In the following text, in order to clearly present the technical features of this application, the dimensions (such as length, width, thickness, and depth) of elements (such as layers, films, substrates, and regions) in the drawings will be enlarged in a non-proportional manner . Therefore, the description and explanation of the following embodiments are not limited to the quantity, size and shape of the components in the drawings, but should cover the deviations in size, shape and both caused by actual manufacturing process and/or tolerance. For example, a planar surface shown in the drawings may have rough and/or non-linear features, while acute angles shown in the drawings may be rounded. Therefore, the components shown in the drawings of this case are mainly for illustration, and are not intended to accurately depict the actual shape of the components, nor are they used to limit the scope of the patent application of this case.

其次,本案內容中所出現的「約」、「近似」或「實質上」等這類用字不僅涵蓋明確記載的數值與數值範圍,而且也涵蓋發明所屬技術領域中具有通常知識者所能理解的可允許偏差範圍,其中此偏差範圍可由測量時所產生的誤差來決定,而此誤差例如是起因於測量系統或製程條件兩者的限制。舉例而言,兩物件(例如基板的平面或走線)「實質上平行」或「實質上垂直」,其中「實質上平行」與「實質上垂直」分別代表這兩物件之間的平行與垂直可包括允許偏差範圍所導致的不平行與不垂直。Secondly, words such as "about", "approximately" or "substantially" appearing in the content of this case not only cover the clearly stated values and numerical ranges, but also cover The allowable deviation range, wherein the deviation range can be determined by the error generated during the measurement, and the error is caused by the limitation of the measurement system or process conditions, for example. For example, two objects (such as a plane or trace of a substrate) are "substantially parallel" or "substantially perpendicular", where "substantially parallel" and "substantially perpendicular" represent the parallel and perpendicular between the two objects, respectively. May include non-parallel and non-perpendicular due to tolerance range.

此外,「約」可表示在上述數值的一個或多個標準偏差內,例如±30%、±20%、±10%或±5%內。本案文中所出現的「約」、「近似」或「實質上」等這類用字可依光學性質、蝕刻性質、機械性質或其他性質來選擇可以接受的偏差範圍或標準偏差,並非單以一個標準偏差來套用以上光學性質、蝕刻性質、機械性質以及其他性質等所有性質。Additionally, "about" can mean within one or more standard deviations of the above numerical values, eg, within ±30%, ±20%, ±10%, or ±5%. Words such as "about", "approximately" or "substantially" appearing in this text can choose the acceptable deviation range or standard deviation according to optical properties, etching properties, mechanical properties or other properties, not a single The standard deviation is used to apply all properties such as the above optical properties, etching properties, mechanical properties and other properties.

圖1A是本發明至少一實施例的發光面板的俯視示意圖。請參閱圖1A,發光面板100包括畫素陣列基板110與黑矩陣層121,其中黑矩陣層121設置於畫素陣列基板110上,並位在畫素陣列基板110的一側。以圖1A為例,黑矩陣層121位在畫素陣列基板110的上表面。黑矩陣層121的形狀可為網狀,而黑矩陣層121覆蓋畫素陣列基板110的部分上表面,但不會完全覆蓋畫素陣列基板110的上表面。黑矩陣層121具有黑色染料(例如碳黑)而呈現黑色,所以黑矩陣層121基本上能完全吸收可見光。FIG. 1A is a schematic top view of a light-emitting panel according to at least one embodiment of the present invention. Please refer to FIG. 1A , the light-emitting panel 100 includes a pixel array substrate 110 and a black matrix layer 121 , wherein the black matrix layer 121 is disposed on the pixel array substrate 110 and located on one side of the pixel array substrate 110 . Taking FIG. 1A as an example, the black matrix layer 121 is located on the upper surface of the pixel array substrate 110 . The shape of the black matrix layer 121 can be mesh, and the black matrix layer 121 covers part of the upper surface of the pixel array substrate 110 , but does not completely cover the upper surface of the pixel array substrate 110 . The black matrix layer 121 has a black dye (such as carbon black) and is black, so the black matrix layer 121 can basically completely absorb visible light.

畫素陣列基板110具有多個次畫素區111s以及多個透光區111t,其中黑矩陣層121不分布於這些透光區111t內。換句話說,這些透光區111t形成於畫素陣列基板110未被黑矩陣層121覆蓋的區域中。這些次畫素區111s可呈規則排列。以圖1A為例,多個(例如三個)次畫素區111s可以聚集成一個群體GR1,而這些群體GR1可呈陣列排列,以使這些次畫素區111s呈規則排列。此外,在本實施例中,各個群體GR1可為畫素陣列基板110所具有的主畫素區。The pixel array substrate 110 has a plurality of sub-pixel regions 111s and a plurality of transparent regions 111t, wherein the black matrix layer 121 is not distributed in the transparent regions 111t. In other words, the light-transmitting regions 111t are formed in regions of the pixel array substrate 110 not covered by the black matrix layer 121 . These sub-pixel regions 111s can be arranged in a regular manner. Taking FIG. 1A as an example, a plurality (for example, three) sub-pixel regions 111s can be aggregated into a group GR1, and these groups GR1 can be arranged in an array, so that the sub-pixel regions 111s are arranged regularly. In addition, in this embodiment, each group GR1 can be the main pixel area of the pixel array substrate 110 .

這些次畫素區111s其中一個可位於其中至少兩個相鄰的透光區111t之間。以圖1A為例,各個次畫素區111s可以位於其中四個相鄰的透光區111t之間,並且被這四個相鄰的透光區111t圍繞,其中這四個相鄰的透光區111t更可圍繞三個次畫素區111s,如圖1A所示。One of the sub-pixel regions 111s may be located between at least two adjacent light-transmitting regions 111t. Taking FIG. 1A as an example, each sub-pixel region 111s may be located between and surrounded by four adjacent light-transmitting regions 111t, wherein the four adjacent light-transmitting regions 111t The area 111t can further surround three sub-pixel areas 111s, as shown in FIG. 1A.

圖1B是圖1A中的發光面板的局部放大示意圖。請參閱圖1A與圖1B,發光面板100還包括多個發光元件130,其中這些發光元件130設置於畫素陣列基板110上,並分別位於這些次畫素區111s上,且各個發光元件130能發出光線L1。FIG. 1B is a partially enlarged schematic view of the light emitting panel in FIG. 1A . 1A and 1B, the light emitting panel 100 also includes a plurality of light emitting elements 130, wherein these light emitting elements 130 are arranged on the pixel array substrate 110, and are respectively located on these sub-pixel regions 111s, and each light emitting element 130 can Light ray L1 is emitted.

發光元件130可以是發光二極體(Light Emitting Diode,LED),其例如是次毫米發光二極體(mini LED)或微型發光二極體(micro LED,μLED)。微型發光二極體的厚度在10微米以下,例如6微米。次毫米發光二極體可分成兩種:一種含有封裝膠,另一種則未含有封裝膠。含有封裝膠的次毫米發光二極體之厚度可在800微米以下,而未含有封裝膠的次毫米發光二極體之厚度可在100微米以下。此外,發光元件130也可以是次毫米發光二極體與微型發光二極體以外的大尺寸正規發光二極體(regular LED),所以發光元件130不限制是尺寸較小的次毫米發光二極體或微型發光二極體。The light emitting element 130 may be a light emitting diode (Light Emitting Diode, LED), such as a submillimeter light emitting diode (mini LED) or a micro light emitting diode (micro LED, μLED). The thickness of the miniature light-emitting diodes is less than 10 microns, such as 6 microns. Submillimeter LEDs can be divided into two types: one with encapsulant and the other without encapsulant. The thickness of the sub-millimeter light-emitting diode containing encapsulant can be less than 800 microns, and the thickness of the sub-millimeter light-emitting diode without encapsulant can be less than 100 microns. In addition, the light-emitting element 130 can also be a large-sized regular LED other than sub-millimeter light-emitting diodes and micro-light-emitting diodes, so the light-emitting element 130 is not limited to be a sub-millimeter light-emitting diode with a smaller size. body or miniature light-emitting diodes.

圖1C是圖1B中沿線1C-1C剖面而繪製的剖面示意圖。請參閱圖1B與圖1C,發光面板100還包括透光圖案層122,其中透光圖案層122設置於畫素陣列基板110上,並分布於這些透光區111t內。因此,透光圖案層122分布於黑矩陣層121以外的畫素陣列基板110區域內。透光圖案層122可以包括多個透光層122p,其中這些透光層122p分布於這些透光區111t內,而黑矩陣層121圍繞各個透光層122p,如圖1A與圖1B所示。透光圖案層122可以是有機材料層或無機材料層,並可以透過噴墨、印刷或光刻(photolithography)而形成。FIG. 1C is a schematic cross-sectional view taken along line 1C-1C in FIG. 1B . Referring to FIG. 1B and FIG. 1C , the light-emitting panel 100 further includes a light-transmitting pattern layer 122 , wherein the light-transmitting pattern layer 122 is disposed on the pixel array substrate 110 and distributed in the light-transmitting regions 111t. Therefore, the transparent pattern layer 122 is distributed in the area of the pixel array substrate 110 other than the black matrix layer 121 . The light-transmitting pattern layer 122 may include a plurality of light-transmitting layers 122p, wherein the light-transmitting layers 122p are distributed in the light-transmitting regions 111t, and the black matrix layer 121 surrounds each light-transmitting layer 122p, as shown in FIGS. 1A and 1B . The transparent pattern layer 122 can be an organic material layer or an inorganic material layer, and can be formed by inkjet, printing or photolithography.

在圖1B所示的實施例中,這些透光層122p可完全覆蓋這些透光區111t,即透光層122p在畫素陣列基板110上所佔據的區域基本上為透光區111t。因此,圖1B所標示的這些透光區111t可視為這些透光層122p。此外,從圖1B來看,即在發光面板100的俯視圖中,各個透光層122p的形狀為不對稱形狀。也就是說,透光層122p的形狀既不是線對稱形狀,也不是點對稱形狀。In the embodiment shown in FIG. 1B , the light-transmitting layers 122p can completely cover the light-transmitting regions 111t , that is, the area occupied by the light-transmitting layers 122p on the pixel array substrate 110 is basically the light-transmitting regions 111t . Therefore, the light-transmitting regions 111t marked in FIG. 1B can be regarded as the light-transmitting layers 122p. In addition, from FIG. 1B , that is, in the top view of the light-emitting panel 100 , the shape of each light-transmitting layer 122p is an asymmetric shape. That is to say, the shape of the light-transmitting layer 122p is neither a line-symmetric shape nor a point-symmetric shape.

黑矩陣層121、透光圖案層122與畫素陣列基板110能形成多個凹槽R1,而這些發光元件130分別位於這些凹槽R1內。其中畫素陣列基板110形成這些凹槽R1的底部,而黑矩陣層121與透光圖案層122共同形成至少一個凹槽R1的側壁,以使黑矩陣層121與透光圖案層122能共同圍繞位於至少一個凹槽R1內的發光元件130。The black matrix layer 121 , the transparent pattern layer 122 and the pixel array substrate 110 can form a plurality of grooves R1 , and the light emitting elements 130 are respectively located in the grooves R1 . Wherein the pixel array substrate 110 forms the bottom of these grooves R1, and the black matrix layer 121 and the light-transmitting pattern layer 122 jointly form the sidewall of at least one groove R1, so that the black matrix layer 121 and the light-transmitting pattern layer 122 can jointly surround The light emitting element 130 is located in at least one groove R1.

以圖1B與圖1C為例,黑矩陣層121與透光圖案層122可以共同形成各個凹槽R1的側壁,而黑矩陣層121與透光圖案層122能共同圍繞各個凹槽R1內的發光元件130。這些凹槽R1分別位於這些次畫素區111s上,但不位於透光區111t上。因此,這些凹槽R1僅分布於這些次畫素區111s內,不分布於任何透光區111t內。Taking FIG. 1B and FIG. 1C as an example, the black matrix layer 121 and the light-transmitting pattern layer 122 can jointly form the sidewalls of each groove R1, and the black matrix layer 121 and the light-transmitting pattern layer 122 can jointly surround the light emission in each groove R1. Element 130. The grooves R1 are respectively located on the sub-pixel regions 111s, but not located on the light-transmitting region 111t. Therefore, the grooves R1 are only distributed in the sub-pixel regions 111s, and not distributed in any light-transmitting region 111t.

畫素陣列基板110包括基板119、多個金屬圖案層112a、112b、112c與112d以及多個絕緣層113a、113b、113c、113d、113e、115a、115b與115c,其中這些金屬圖案層112a至112d、這些絕緣層113a至113e以及115a至115c皆堆疊及設置於基板119上。金屬圖案層112a、112b、112c與112d其中至少一者可以由一層或多層金屬層所構成。The pixel array substrate 110 includes a substrate 119, a plurality of metal pattern layers 112a, 112b, 112c, and 112d, and a plurality of insulating layers 113a, 113b, 113c, 113d, 113e, 115a, 115b, and 115c, wherein the metal pattern layers 112a to 112d , These insulating layers 113 a to 113 e and 115 a to 115 c are all stacked and disposed on the substrate 119 . At least one of the metal pattern layers 112a, 112b, 112c, and 112d may be composed of one or more metal layers.

金屬圖案層112a、112b與112c至少一者可具有三層金屬層。一層金屬層可以是鋁金屬層,而其他兩層金屬層可以是鈦金屬層,其中鋁金屬層夾置在這兩層鈦金屬層之間。或者,金屬圖案層112a、112b與112c至少一者可具有兩層金屬層:一層鋁金屬層與一層鈦金屬層,其中鋁金屬層較接近發光元件130。At least one of the metal pattern layers 112a, 112b and 112c may have three metal layers. One metal layer may be an aluminum metal layer, and the other two metal layers may be titanium metal layers, wherein the aluminum metal layer is sandwiched between the two titanium metal layers. Alternatively, at least one of the metal pattern layers 112 a , 112 b and 112 c may have two metal layers: an aluminum metal layer and a titanium metal layer, wherein the aluminum metal layer is closer to the light emitting element 130 .

在金屬圖案層112d中,這些接墊P41所具有的金屬層可包括鎳金層、鋁金屬層以及鈦金屬層,其中鎳金層最接近發光元件130。除了這些接墊P41以外,金屬圖案層112d其他部分的膜層組成也可以相同於金屬圖案層112a、112b或112c的膜層組成。In the metal pattern layer 112 d , the metal layers of the pads P41 may include a nickel-gold layer, an aluminum metal layer, and a titanium metal layer, wherein the nickel-gold layer is closest to the light emitting element 130 . Except for the pads P41 , the film composition of other parts of the metal pattern layer 112d can also be the same as that of the metal pattern layer 112a, 112b or 112c.

此外,在形成上述鎳金層以前,接墊P41也可以具有一層鋁金屬層與兩層金屬層,其中鋁金屬層夾置在這兩層鈦金屬層之間。在形成鎳金層的過程中,可以先移除最上層的鈦金屬層。之後,利用化學方式,例如化學電鍍,在鋁金屬層上沉積形成鎳金層。In addition, before forming the nickel-gold layer, the pad P41 may also have an aluminum metal layer and two metal layers, wherein the aluminum metal layer is interposed between the two titanium metal layers. In the process of forming the nickel-gold layer, the uppermost titanium metal layer may be removed first. Afterwards, a nickel-gold layer is deposited on the aluminum metal layer by chemical means, such as electroless plating.

基板119以及這些絕緣層113a、113b、113c、113d、113e、115a、115b與115c可以是透明的,其中基板119例如是玻璃板或透明高分子材料基板。前述透明高分子材料基板例如是由聚對苯二甲酸乙二酯(Polyethylene Terephthalate,PET)或聚醯亞胺(Polyimide,PI)所製成。或者,透明高分子材料基板也可以是由其他高分子材料所製成。The substrate 119 and the insulating layers 113a, 113b, 113c, 113d, 113e, 115a, 115b, and 115c may be transparent, wherein the substrate 119 is, for example, a glass plate or a transparent polymer material substrate. The aforementioned transparent polymer material substrate is made of, for example, polyethylene terephthalate (PET) or polyimide (Polyimide, PI). Alternatively, the transparent polymer material substrate can also be made of other polymer materials.

這些金屬圖案層112a、112b、112c與112d每一者可位在這些絕緣層113a、113b、113c、113d、113e、115a、115b與115c其中相鄰兩者之間。以圖1C為例,金屬圖案層112a位於絕緣層113a與113b之間,而金屬圖案層112b位於絕緣層113b與115a之間。金屬圖案層112c位於絕緣層115a與115b之間,而金屬圖案層112d位於絕緣層113c與113d之間。Each of the metal pattern layers 112a, 112b, 112c and 112d may be located between adjacent two of the insulating layers 113a, 113b, 113c, 113d, 113e, 115a, 115b and 115c. Taking FIG. 1C as an example, the metal pattern layer 112a is located between the insulating layers 113a and 113b, and the metal pattern layer 112b is located between the insulating layers 113b and 115a. The metal pattern layer 112c is located between the insulating layers 115a and 115b, and the metal pattern layer 112d is located between the insulating layers 113c and 113d.

金屬圖案層112a設置在基板119上,而金屬圖案層112b與112c位於金屬圖案層112a與112d之間,其中金屬圖案層112c位於金屬圖案層112b與112d之間,而金屬圖案層112b位於金屬圖案層112a與112c之間。此外,畫素陣列基板110還可包括多個半導體層TC1,其中這些半導體層TC1位在基板119上,而絕緣層113a覆蓋這些半導體層TC1與基板119。The metal pattern layer 112a is disposed on the substrate 119, and the metal pattern layers 112b and 112c are positioned between the metal pattern layers 112a and 112d, wherein the metal pattern layer 112c is positioned between the metal pattern layers 112b and 112d, and the metal pattern layer 112b is positioned between the metal pattern layers 112b and 112d. between layers 112a and 112c. In addition, the pixel array substrate 110 may further include a plurality of semiconductor layers TC1 , wherein the semiconductor layers TC1 are located on the substrate 119 , and the insulating layer 113 a covers the semiconductor layers TC1 and the substrate 119 .

金屬圖案層112a位於絕緣層113a上,而絕緣層113b覆蓋金屬圖案層112a。金屬圖案層112b位於絕緣層113b上,而絕緣層115a覆蓋金屬圖案層112b。金屬圖案層112c位於絕緣層115a上,而絕緣層115b覆蓋覆蓋金屬圖案層112c。The metal pattern layer 112a is located on the insulating layer 113a, and the insulating layer 113b covers the metal pattern layer 112a. The metal pattern layer 112b is located on the insulating layer 113b, and the insulating layer 115a covers the metal pattern layer 112b. The metal pattern layer 112c is located on the insulating layer 115a, and the insulating layer 115b covers the metal pattern layer 112c.

金屬圖案層112d與絕緣層113c皆位於絕緣層115b上,而絕緣層113d覆蓋金屬圖案層112d與絕緣層113c,以使絕緣層113c夾置於絕緣層115b與113d之間。絕緣層115c與113e位於絕緣層113d上,其中絕緣層115c夾置於絕緣層113e與113d之間,而這些透光層122p位於絕緣層113e上。The metal pattern layer 112d and the insulating layer 113c are located on the insulating layer 115b, and the insulating layer 113d covers the metal pattern layer 112d and the insulating layer 113c, so that the insulating layer 113c is interposed between the insulating layers 115b and 113d. The insulating layers 115c and 113e are located on the insulating layer 113d, wherein the insulating layer 115c is interposed between the insulating layers 113e and 113d, and the transparent layers 122p are located on the insulating layer 113e.

在本實施例中,絕緣層115a、115b與115c可以是有機材料層,而絕緣層113a、113b、113c、113d與113e可以是無機材料層,其例如是由氧化矽、氮化矽或其他無機材料所製成。這些絕緣層113a、113b、113c、113d與113e具有阻擋水氣的功效,以阻礙或避免水氣滲入至發光面板100,進而防止發光元件130與畫素陣列基板110受到水氣的影響而失效。In this embodiment, the insulating layers 115a, 115b and 115c can be organic material layers, and the insulating layers 113a, 113b, 113c, 113d and 113e can be inorganic material layers, which are made of silicon oxide, silicon nitride or other inorganic materials, for example. made of materials. These insulating layers 113a, 113b, 113c, 113d, and 113e have the function of blocking water vapor, so as to prevent or prevent water vapor from penetrating into the light-emitting panel 100, thereby preventing the light-emitting element 130 and the pixel array substrate 110 from being damaged by water vapor.

畫素陣列基板110還可以包括多個接觸窗114b與114c,其中這些接觸窗114b與114c連接這些金屬圖案層112b、112c與112d,以使這些金屬圖案層112b、112c與112d能彼此電性連接。具體而言,這些接觸窗114b與114c每一者實質上為導電柱,並且連接這些金屬圖案層112b、112c與112d其中相鄰兩層。The pixel array substrate 110 may also include a plurality of contact windows 114b and 114c, wherein the contact windows 114b and 114c are connected to the metal pattern layers 112b, 112c and 112d, so that the metal pattern layers 112b, 112c and 112d can be electrically connected to each other . Specifically, each of the contact windows 114b and 114c is substantially a conductive column, and connects two adjacent layers of the metal pattern layers 112b, 112c, and 112d.

以圖1C為例,這些接觸窗114b貫穿絕緣層115a,並連接金屬圖案層112b與112c,以使金屬圖案層112b與112c能彼此電性連接。這些接觸窗114c貫穿絕緣層113c與115b,並連接金屬圖案層112c與112d,以使金屬圖案層112c與112d能彼此電性連接。如此,透過接觸窗114b與114c,這些金屬圖案層112b、112c與112d能彼此電性連接。Taking FIG. 1C as an example, the contact holes 114b penetrate the insulating layer 115a and connect the metal pattern layers 112b and 112c, so that the metal pattern layers 112b and 112c can be electrically connected to each other. The contact windows 114c penetrate through the insulating layers 113c and 115b, and connect the metal pattern layers 112c and 112d, so that the metal pattern layers 112c and 112d can be electrically connected to each other. In this way, through the contact windows 114b and 114c, the metal pattern layers 112b, 112c and 112d can be electrically connected to each other.

在圖1C所示的實施例中,畫素陣列基板110可以是主動元件陣列基板,並且具有多個主動元件TT1,其可以是多個薄膜電晶體(Thin Film Transistor,TFT)。具體而言,畫素陣列基板110還可以包括多個半導體層TC1,其中這些半導體層TC1設置在基板119上,並且被絕緣層113a覆蓋。金屬圖案層112a可包括多個閘極TG1,其中這些閘極TG1設置在絕緣層113a上,並且分別與這些半導體層TC1重疊,以使彼此重疊的閘極TG1與半導體層TC1以及夾置在閘極TG1與半導體層TC1之間的部分絕緣層113a能形成電容。In the embodiment shown in FIG. 1C , the pixel array substrate 110 may be an active device array substrate, and has a plurality of active devices TT1 , which may be a plurality of thin film transistors (Thin Film Transistor, TFT). Specifically, the pixel array substrate 110 may further include a plurality of semiconductor layers TC1, wherein the semiconductor layers TC1 are disposed on the substrate 119 and covered by the insulating layer 113a. The metal pattern layer 112a may include a plurality of gates TG1, wherein these gates TG1 are disposed on the insulating layer 113a, and respectively overlap with these semiconductor layers TC1, so that the mutually overlapping gates TG1 and the semiconductor layer TC1 are sandwiched between the gates. Part of the insulating layer 113a between the pole TG1 and the semiconductor layer TC1 can form a capacitor.

畫素陣列基板110還可包括多個接觸窗114d與114s,其中接觸窗114d與114s皆貫穿絕緣層113a與113b,並連接半導體層TC1與金屬圖案層112b。接觸窗114d與114s不會直接電性連接閘極TG1,以避免發生短路。各個半導體層TC1會連接一個接觸窗114d與一個接觸窗114s,如圖1C所示。如此,半導體層TC1、接觸窗114d與114s、閘極TG1以及部分絕緣層113a得以形成主動元件TT1,其可為薄膜電晶體,其中接觸窗114d與114s可分別作為主動元件TT1的汲極與源極。The pixel array substrate 110 may further include a plurality of contact windows 114d and 114s, wherein the contact windows 114d and 114s both penetrate the insulating layers 113a and 113b, and connect the semiconductor layer TC1 and the metal pattern layer 112b. The contact windows 114d and 114s are not directly electrically connected to the gate TG1 to avoid a short circuit. Each semiconductor layer TC1 is connected to a contact window 114d and a contact window 114s, as shown in FIG. 1C . In this way, the semiconductor layer TC1, the contact windows 114d and 114s, the gate TG1 and part of the insulating layer 113a can form an active device TT1, which can be a thin film transistor, wherein the contact windows 114d and 114s can be used as the drain and source of the active device TT1 respectively pole.

利用這些接觸窗114d與114s,這些半導體層TC1能電性連接金屬圖案層112b的多個接墊(未標示)。由於金屬圖案層112b、112c以及112d能透過接觸窗114b與114c而彼此電性連接,因此這些半導體層TC1可以透過接觸窗114d、114s與金屬圖案層112b而電性連接金屬圖案層112c與112d。Using the contact windows 114d and 114s, the semiconductor layer TC1 can be electrically connected to a plurality of pads (not shown) of the metal pattern layer 112b. Since the metal pattern layers 112b, 112c and 112d can be electrically connected to each other through the contact windows 114b and 114c, these semiconductor layers TC1 can be electrically connected to the metal pattern layers 112c and 112d through the contact windows 114d, 114s and the metal pattern layer 112b.

須說明的是,圖1C所描繪的這些金屬圖案層112a、112b、112c與112d、絕緣層113a、113b、113c、113d、113e、115a、115b與115c以及接觸窗114b、114c、114d與114s僅是用來舉例說明,並非限制畫素陣列基板110所包括的金屬圖案層、絕緣層與接觸窗的數量。舉例而言,在其他實施例中,絕緣層113e可以被省略。或者,絕緣層115a與金屬圖案層112c可以被省略,以使絕緣層115b能直接覆蓋金屬圖案層112b。It should be noted that the metal pattern layers 112a, 112b, 112c and 112d, the insulating layers 113a, 113b, 113c, 113d, 113e, 115a, 115b and 115c and the contact windows 114b, 114c, 114d and 114s depicted in FIG. It is used for illustration, and is not intended to limit the number of metal pattern layers, insulating layers and contact windows included in the pixel array substrate 110 . For example, in other embodiments, the insulating layer 113e may be omitted. Alternatively, the insulating layer 115a and the metal pattern layer 112c can be omitted, so that the insulating layer 115b can directly cover the metal pattern layer 112b.

金屬圖案層112d可包括多條走線T41與多個接墊P41,而金屬圖案層112a可包括多條走線T11(僅繪示於圖1B)。這些走線T41與T11以及這些接墊P41皆設置於基板119之上,其中走線T41與接墊P41皆位於走線T11的上方,所以走線T41與T11彼此不共平面。The metal pattern layer 112d may include a plurality of traces T41 and a plurality of pads P41 , and the metal pattern layer 112a may include a plurality of traces T11 (only shown in FIG. 1B ). The traces T41 and T11 and the pads P41 are disposed on the substrate 119 , wherein the traces T41 and the pads P41 are located above the traces T11 , so the traces T41 and T11 are not coplanar with each other.

走線T11與T41走向彼此不同。以圖1B為例,這些走線T11皆沿著第一方向D1而延伸,而這些走線T41皆沿著第二方向D2而延伸,其中第一方向D1不同於第二方向D2。例如,在圖1B中,第一方向D1可以是水平方向,而第二方向D2可以是垂直方向,所以第一方向D1與第二方向D2可以是實質上彼此垂直。The directions of the traces T11 and T41 are different from each other. Taking FIG. 1B as an example, the traces T11 all extend along the first direction D1, and the traces T41 all extend along the second direction D2, wherein the first direction D1 is different from the second direction D2. For example, in FIG. 1B , the first direction D1 may be a horizontal direction, and the second direction D2 may be a vertical direction, so the first direction D1 and the second direction D2 may be substantially perpendicular to each other.

這些走線T11連接這些閘極TG1,而這些走線T41可透過接觸窗114c、114b與金屬圖案層112c、112b而電性連接接觸窗114s,其中接觸窗114s相當於主動元件TT1的源極。這些發光元件130分別電性連接這些接墊P41。例如,發光元件130可透過連接件SB1而電性連接接墊P41,以使這些發光元件130能電性連接畫素陣列基板110,其中連接件SB1例如是焊料或銦粒。The traces T11 are connected to the gates TG1, and the traces T41 are electrically connected to the contact window 114s through the contact windows 114c, 114b and the metal pattern layers 112c, 112b, wherein the contact window 114s is equivalent to the source of the active device TT1. The light emitting elements 130 are electrically connected to the pads P41 respectively. For example, the light-emitting elements 130 can be electrically connected to the pads P41 through the connector SB1 , such that the light-emitting elements 130 can be electrically connected to the pixel array substrate 110 , wherein the connector SB1 is, for example, solder or indium grains.

在圖1C的實施例中,發光元件130的陽極(anode,未標示)透過連接件SB1、接墊P41、接觸窗114c、114b與金屬圖案層112c與112b而電性連接接觸窗114d。接觸窗114d相當於主動元件TT1的汲極,所以發光元件130的陽極電性連接主動元件TT1的汲極。In the embodiment of FIG. 1C , the anode (anode, not shown) of the light emitting element 130 is electrically connected to the contact window 114d through the connector SB1 , the pad P41 , the contact windows 114c, 114b and the metal pattern layers 112c and 112b. The contact window 114d is equivalent to the drain of the active device TT1, so the anode of the light emitting device 130 is electrically connected to the drain of the active device TT1.

由於走線T11連接閘極TG1,且走線T41電性連接接觸窗114s(即主動元件TT1的源極),因此這些走線T11所傳輸的開關訊號能開啟或關閉主動元件TT1,以使走線T41所傳輸的電訊號能經由開啟的主動元件TT1而輸入至發光元件130,從而讓此發光元件130發光。如此,這些走線T11、T41與這些主動元件TT1能控制這些發光元件130發光。Since the trace T11 is connected to the gate TG1, and the trace T41 is electrically connected to the contact window 114s (that is, the source of the active element TT1), the switching signal transmitted by these traces T11 can turn on or off the active element TT1, so that the trace The electrical signal transmitted by the line T41 can be input to the light-emitting element 130 through the turned-on active element TT1, so that the light-emitting element 130 emits light. In this way, the wires T11 , T41 and the active elements TT1 can control the light emitting elements 130 to emit light.

在本實施例中,這些發光元件130能發出不同顏色的色光,例如紅光、綠光與藍光。以圖1B為例,位於三個彼此相鄰的次畫素區111s內的三個發光元件130可以分別是紅光發光二極體、綠光發光二極體與藍光發光二極體。如此,這些走線T11、T41與這些主動元件TT1能控制這些發光元件130發出不同顏色的色光(例如紅光、綠光與藍光),以使發光面板100能產生影像。此外,上述三個彼此相鄰的次畫素區111s可形成一個群體GR1,而各個群體GR1可為主畫素。In this embodiment, the light emitting elements 130 can emit different colors of light, such as red light, green light and blue light. Taking FIG. 1B as an example, the three light emitting elements 130 located in three adjacent sub-pixel regions 111s may be red light emitting diodes, green light emitting diodes and blue light emitting diodes respectively. In this way, the wires T11 , T41 and the active elements TT1 can control the light emitting elements 130 to emit different colors of light (such as red light, green light and blue light), so that the light emitting panel 100 can generate images. In addition, the above three sub-pixel regions 111s adjacent to each other can form a group GR1, and each group GR1 can be a main pixel.

另外,各個接墊P41的形狀可以是長條狀。以圖1B為例,位於各個次畫素區111s內的兩個接墊P41可沿著第二方向D2延伸,並沿著第一方向D1排列。在這些發光元件130設置於畫素陣列基板110上之後,發光元件130可沿著第一方向D1延伸,以使位於單一個次畫素區111s內的發光元件130不會覆蓋所有接墊P41,而未被發光元件130覆蓋的部分接墊P41可形成保留區RA1。In addition, the shape of each pad P41 may be a strip shape. Taking FIG. 1B as an example, the two pads P41 located in each sub-pixel region 111s may extend along the second direction D2 and be arranged along the first direction D1. After these light emitting elements 130 are disposed on the pixel array substrate 110, the light emitting elements 130 may extend along the first direction D1, so that the light emitting elements 130 located in a single sub-pixel region 111s will not cover all the pads P41, The part of the pad P41 not covered by the light emitting element 130 can form the reserved area RA1.

一個保留區RA1可以容納至少一個發光元件130設置。當有次畫素區111s內的發光元件130故障而無法發出光線L1時,可將正常的發光元件130設置在故障發光元件130鄰近的保留區RA1內,以取代故障發光元件130。如此,原本故障的發光元件130所處的次畫素區111s仍可以發出光線L1,以降低或避免故障發光元件130對發光面板100影像品質所造成的不良影響。One reserved area RA1 may accommodate at least one light emitting element 130 arrangement. When a light-emitting element 130 in the sub-pixel area 111s fails to emit light L1 , a normal light-emitting element 130 can be placed in the reserved area RA1 adjacent to the failed light-emitting element 130 to replace the failed light-emitting element 130 . In this way, the sub-pixel region 111s where the originally faulty light-emitting element 130 is located can still emit light L1, so as to reduce or avoid the adverse effect of the faulty light-emitting element 130 on the image quality of the light-emitting panel 100 .

須說明的是,在本實施例中,金屬圖案層112d包括多條走線T41,而金屬圖案層112a包括多條走線T11。然而,在其他實施例中,也可以是其他金屬圖案層包括走線T41與T11。例如,金屬圖案層112c可包括這些走線T41,其中走線T41可透過接觸窗114b與金屬圖案層112b而電性連接接觸窗114s。因此,圖1B與圖1C僅供舉例說明,不限制金屬圖案層112d要包括走線T41,金屬圖案層112a要包括走線T11。It should be noted that, in this embodiment, the metal pattern layer 112d includes a plurality of traces T41, and the metal pattern layer 112a includes a plurality of traces T11. However, in other embodiments, other metal pattern layers may also include the traces T41 and T11. For example, the metal pattern layer 112c may include these traces T41, wherein the traces T41 may electrically connect the contact window 114s through the contact window 114b and the metal pattern layer 112b. Therefore, FIG. 1B and FIG. 1C are for illustration only, and do not limit the metal pattern layer 112d to include the trace T41, and the metal pattern layer 112a to include the trace T11.

黑矩陣層121與透光圖案層122皆位於絕緣層113e上,其中黑矩陣層121會沿著這些走線T11與T41而延伸,並遮蓋這些走線T11與T41。如此,黑矩陣層121能減少或防止這些走線T11與T41反射外界光線,提升發光面板100的影像品質。此外,在圖1B所示的實施例中,黑矩陣層121可沿著其中四條走線,即兩條走線T11與兩條走線T41,圍繞各個透光層122p。Both the black matrix layer 121 and the transparent pattern layer 122 are located on the insulating layer 113e, wherein the black matrix layer 121 extends along the traces T11 and T41 and covers the traces T11 and T41. In this way, the black matrix layer 121 can reduce or prevent the traces T11 and T41 from reflecting external light, so as to improve the image quality of the light-emitting panel 100 . In addition, in the embodiment shown in FIG. 1B , the black matrix layer 121 can surround each light-transmitting layer 122p along four of the traces, namely two traces T11 and two traces T41 .

這些金屬圖案層112a、112b、112c與112d以及這些半導體層TC1皆不與透光圖案層122重疊。換句話說,這些金屬圖案層112a、112b、112c與112d以及這些半導體層TC1不會分布於任何透光區111t。如此,外界光線能穿透透光圖案層122與透光區111t而不被金屬圖案層112a、112b、112c與112d以及半導體層TC1所阻擋,以使發光面板100適合製作成透明顯示器。此外,由於各個透光層122p的形狀為不對稱形狀(如圖1B所示),因此透光圖案層122可以減輕對光線的繞射效果,以減輕或防止光學繞射對影像所造成的不良影響。The metal pattern layers 112 a , 112 b , 112 c and 112 d and the semiconductor layer TC1 do not overlap with the transparent pattern layer 122 . In other words, the metal pattern layers 112a, 112b, 112c, and 112d and the semiconductor layers TC1 are not distributed in any light-transmitting region 111t. In this way, external light can pass through the light-transmitting pattern layer 122 and the light-transmitting region 111t without being blocked by the metal pattern layers 112a, 112b, 112c, and 112d and the semiconductor layer TC1, so that the light-emitting panel 100 is suitable for making a transparent display. In addition, since the shape of each light-transmitting layer 122p is an asymmetric shape (as shown in FIG. 1B ), the light-transmitting pattern layer 122 can reduce the diffraction effect on light, so as to reduce or prevent the defects caused by optical diffraction on the image. Influence.

發光面板100更包括多個填充材料140,其中這些填充材料140分別填入於這些凹槽R1內。填充材料140可以是黑色膠材,並具有黑色染料,例如碳黑。因此,填充材料140的顏色為黑色,且填充材料140基本上能完全吸收可見光。換句話說,填充材料140能吸收外界光線,並能減少對外界光線的反射,以提升發光面板100的影像品質。此外,填充材料140可以利用印刷,例如噴墨(inkjet),而形成於凹槽R1內。The light emitting panel 100 further includes a plurality of filling materials 140, wherein the filling materials 140 are respectively filled in the grooves R1. The filling material 140 may be a black rubber material with a black dye, such as carbon black. Therefore, the color of the filling material 140 is black, and the filling material 140 can absorb visible light substantially completely. In other words, the filling material 140 can absorb external light and reduce the reflection of external light, so as to improve the image quality of the light-emitting panel 100 . In addition, the filling material 140 may be formed in the groove R1 by printing, such as inkjet.

各個發光元件130具有出光頂面131與發光層132,其中發光層132能產生光線L1,而光線L1能從出光頂面131出射。這些填充材料140未覆蓋這些發光元件130的出光頂面131。以圖1C為例,各個發光元件130可以凸出填充材料140的上表面。所以,填充材料140基本上不會遮擋從出光頂面131出射的光線L1,以避免對發光面板100的影像品質造成不良影響。Each light-emitting element 130 has a light-emitting top surface 131 and a light-emitting layer 132 , wherein the light-emitting layer 132 can generate light L1 , and the light L1 can exit from the light-emitting top surface 131 . The filling materials 140 do not cover the light emitting top surfaces 131 of the light emitting elements 130 . Taking FIG. 1C as an example, each light emitting element 130 may protrude from the upper surface of the filling material 140 . Therefore, the filling material 140 basically does not block the light L1 emitted from the light-emitting top surface 131 , so as to avoid adverse effects on the image quality of the light-emitting panel 100 .

由於這些發光元件130能發出不同顏色的色光,例如紅光、綠光與藍光,所以這些發光元件130的發光層132能產生不同顏色的光線L1。從圖1C來看,發光層132相對於畫素陣列基板110的高度小於填充材料140的上表面相對於畫素陣列基板110的高度,所以填充材料140可以覆蓋發光層132的側邊,如圖1C所示。Since the light emitting elements 130 can emit light of different colors, such as red light, green light and blue light, the light emitting layers 132 of the light emitting elements 130 can generate light L1 of different colors. From FIG. 1C, the height of the light-emitting layer 132 relative to the pixel array substrate 110 is smaller than the height of the upper surface of the filling material 140 relative to the pixel array substrate 110, so the filling material 140 can cover the sides of the light-emitting layer 132, as shown in FIG. 1C.

黑矩陣層121與透光圖案層122兩者的上表面可以彼此不切齊。例如,黑矩陣層121可以凸出於透光圖案層122的上表面。黑矩陣層121的上表面與透光圖案層122(即透光層122p)的上表面兩者的高度差G1可以小於或等於1.5微米。當高度差G1大於1.5微米時,在形成填充材料140的過程中,容易出現填充材料140溢出或填充材料140厚度不足的風險。因此,小於或等於1.5微米的高度差G1可以減少上述風險,從而有助於提升發光面板100的良率。此外,在其他實施例中,高度差G1可以等於或近似於0,即黑矩陣層121與透光圖案層122兩者的上表面可以實質上彼此切齊。The upper surfaces of the black matrix layer 121 and the transparent pattern layer 122 may not be aligned with each other. For example, the black matrix layer 121 may protrude from the upper surface of the light-transmitting pattern layer 122 . The height difference G1 between the upper surface of the black matrix layer 121 and the upper surface of the transparent pattern layer 122 (ie, the transparent layer 122 p ) may be less than or equal to 1.5 micrometers. When the height difference G1 is greater than 1.5 μm, the filling material 140 may overflow or the filling material 140 may not be thick enough during the process of forming the filling material 140 . Therefore, the height difference G1 of less than or equal to 1.5 microns can reduce the above risks, thereby helping to improve the yield of the light emitting panel 100 . In addition, in other embodiments, the height difference G1 may be equal to or close to 0, that is, the upper surfaces of the black matrix layer 121 and the transparent pattern layer 122 may be substantially aligned with each other.

發光面板100還可以包括透明層151,其中透明層151設置於畫素陣列基板110上,並且全面性覆蓋畫素陣列基板110的上表面。因此,透明層151能覆蓋這些發光元件130、這些填充材料140、黑矩陣層121以及透光圖案層122,如圖1C所示,以保護這些發光元件130。The light-emitting panel 100 may further include a transparent layer 151 , wherein the transparent layer 151 is disposed on the pixel array substrate 110 and completely covers the upper surface of the pixel array substrate 110 . Therefore, the transparent layer 151 can cover the light-emitting elements 130 , the filling materials 140 , the black matrix layer 121 and the light-transmitting pattern layer 122 , as shown in FIG. 1C , to protect the light-emitting elements 130 .

發光面板100還可包括至少一層抗反射層152。以圖1C為例,發光面板100包括兩層抗反射層152,其中這兩層抗反射層152分別位於畫素陣列基板110的相對兩側。換句話說,畫素陣列基板110位於這兩層抗反射層152之間。其中一層抗反射層152可設置於透明層151與這些發光元件130的上方,而另一層抗反射層152可設置於基板119的下表面。The light emitting panel 100 may further include at least one anti-reflection layer 152 . Taking FIG. 1C as an example, the light-emitting panel 100 includes two layers of anti-reflection layers 152 , wherein the two layers of anti-reflection layers 152 are respectively located on opposite sides of the pixel array substrate 110 . In other words, the pixel array substrate 110 is located between the two anti-reflection layers 152 . One of the antireflection layers 152 can be disposed on the transparent layer 151 and the light emitting elements 130 , and the other antireflection layer 152 can be disposed on the lower surface of the substrate 119 .

抗反射層152能讓光線L1以及外界光線穿透,並且可以減少對光線L1與外界光線的反射,其中下方的抗反射層152更可以讓大部分穿透透光圖案層122的外界光線從發光面板100出射,以降低透光區111t對外界光線的反射,從而提升發光面板100的影像品質。The anti-reflection layer 152 can allow light L1 and external light to penetrate, and can reduce the reflection of light L1 and external light. The anti-reflection layer 152 below can allow most of the external light that penetrates the light-transmitting pattern layer 122 to emit light The panel 100 emits light to reduce the reflection of the light from the light-transmitting area 111t to the outside light, thereby improving the image quality of the light-emitting panel 100 .

在同一個次畫素區111s中,例如在各個次畫素區111s中,這些金屬圖案層112a、112b、112c與112d以及這些半導體層TC1於基板119上的垂直投影面積MP1可以大於或等於凹槽R1於基板119上的垂直投影面積(相當於圖1C所示的次畫素區111s)的一半,而且這些金屬圖案層112a、112b、112c與112d以及這些半導體層TC1於基板119上的垂直投影可以完全涵蓋發光元件130於基板119上的垂直投影。換句話說,這些金屬圖案層112a、112b、112c與112d能遮蓋發光元件130的整個底面(未標示),如圖1C所示。In the same sub-pixel region 111s, for example, in each sub-pixel region 111s, the vertical projected area MP1 of these metal pattern layers 112a, 112b, 112c and 112d and these semiconductor layers TC1 on the substrate 119 may be greater than or equal to the concave The vertical projected area of the groove R1 on the substrate 119 (corresponding to the sub-pixel region 111s shown in FIG. The projection can completely cover the vertical projection of the light emitting element 130 on the substrate 119 . In other words, the metal pattern layers 112 a , 112 b , 112 c and 112 d can cover the entire bottom surface (not shown) of the light emitting element 130 , as shown in FIG. 1C .

圖1D是圖1C的局部放大示意圖。請參閱圖1C與圖1D,黑矩陣層121可以凸出或切齊於畫素陣列基板110最外層金屬圖案層112d(包括走線T41)的邊緣。以圖1D所示的走線T41為例,黑矩陣層121凸出於走線T41邊緣E12而具有多個凸出長度121g。各個凸出長度121g是鄰近的黑矩陣層121邊緣與金屬圖案層112d邊緣(例如邊緣E12)兩者之間的距離垂直投影於基板119上而成的長度,其中各個凸出長度121g會垂直於基板119的法線方向119n。此外,為了增加發光面板100的開口率,在可允許的公差範圍下,凸出長度121g可以大於0微米,並小於或等於10微米。FIG. 1D is a partially enlarged schematic view of FIG. 1C . Referring to FIG. 1C and FIG. 1D , the black matrix layer 121 may protrude or be aligned with the edge of the outermost metal pattern layer 112 d (including the trace T41 ) of the pixel array substrate 110 . Taking the trace T41 shown in FIG. 1D as an example, the black matrix layer 121 protrudes from the edge E12 of the trace T41 and has a plurality of protruding lengths 121g. Each protruding length 121g is the length of the vertical projection of the distance between the adjacent black matrix layer 121 edge and the metal pattern layer 112d edge (for example, edge E12) on the substrate 119, wherein each protruding length 121g will be perpendicular to The normal direction 119n of the substrate 119 . In addition, in order to increase the aperture ratio of the light-emitting panel 100 , the protrusion length 121g may be greater than 0 micrometers and less than or equal to 10 micrometers within an allowable tolerance range.

圖2是本發明另一實施例的發光面板的剖面示意圖。請參閱圖2,本實施例的發光面板200相似於前述發光面板100,且發光面板200與100兩者也包括一些相同元件,例如畫素陣列基板110與多個發光元件130。以下主要說明發光面板200與100之間的差異。發光面板200與100兩者相同特徵原則上不再重複敘述。FIG. 2 is a schematic cross-sectional view of a light-emitting panel according to another embodiment of the present invention. Please refer to FIG. 2 , the light emitting panel 200 of this embodiment is similar to the above light emitting panel 100 , and both the light emitting panels 200 and 100 also include some same elements, such as the pixel array substrate 110 and the plurality of light emitting elements 130 . The differences between the light emitting panels 200 and 100 are mainly described below. In principle, the same features of the light emitting panels 200 and 100 will not be described repeatedly.

發光面板200包括至少一個填充材料240。以圖2為例,發光面板200可包括多個填充材料240,其中這些填充材料240分別填入於這些凹槽R1內。有別於前述填充材料140,各個填充材料240可包括透光材料241與吸光層242。透光材料241填入於凹槽R1內,而吸光層242設置於透光材料241上,並覆蓋透光材料241。The light emitting panel 200 includes at least one filling material 240 . Taking FIG. 2 as an example, the light emitting panel 200 may include a plurality of filling materials 240, wherein the filling materials 240 are respectively filled in the grooves R1. Different from the aforementioned filling material 140 , each filling material 240 may include a light-transmitting material 241 and a light-absorbing layer 242 . The light-transmitting material 241 is filled in the groove R1 , and the light-absorbing layer 242 is disposed on the light-transmitting material 241 and covers the light-transmitting material 241 .

填充材料240與前述填充材料140兩者形成方法可以彼此相同,例如透光材料241與吸光層242可以利用印刷(例如噴墨)而形成。吸光層242與前述填充材料140兩者可以是黑色膠材,並且具有黑色染料,例如碳黑。所以,吸光層242的顏色為黑色,且吸光層242基本上能完全吸收可見光。因此,吸光層242能減少對外界光線的反射,以提升發光面板200的影像品質。The methods for forming the filling material 240 and the aforementioned filling material 140 may be the same. For example, the light-transmitting material 241 and the light-absorbing layer 242 may be formed by printing (eg, inkjet). Both the light absorbing layer 242 and the aforementioned filling material 140 may be black glue material with black dye, such as carbon black. Therefore, the color of the light absorbing layer 242 is black, and the light absorbing layer 242 can basically completely absorb visible light. Therefore, the light absorbing layer 242 can reduce the reflection of external light, so as to improve the image quality of the light emitting panel 200 .

此外,吸光層242圍繞凹槽R1內的發光元件130,並且不覆蓋出光頂面131。例如,各個發光元件130可以凸出吸光層242的上表面。如此,吸光層242基本上不會遮擋從出光頂面131出射的光線L1,以避免對發光面板200影像品質所造成的不良影響。In addition, the light absorbing layer 242 surrounds the light emitting element 130 in the groove R1 and does not cover the light emitting top surface 131 . For example, each light emitting element 130 may protrude from the upper surface of the light absorbing layer 242 . In this way, the light-absorbing layer 242 basically does not block the light L1 emitted from the light-emitting top surface 131 , so as to avoid adverse effects on the image quality of the light-emitting panel 200 .

從圖2來看,發光層132相對於畫素陣列基板110的高度小於透光材料241的上表面相對於畫素陣列基板110的高度。換句話說,透光材料241可以覆蓋發光層132的側邊(未標示),但吸光層242不覆蓋發光層132的側邊。其次,光線L1能穿透透光材料241,並且在透光材料241內傳遞。From FIG. 2 , the height of the light-emitting layer 132 relative to the pixel array substrate 110 is smaller than the height of the upper surface of the light-transmitting material 241 relative to the pixel array substrate 110 . In other words, the light-transmitting material 241 can cover the sides (not shown) of the light-emitting layer 132 , but the light-absorbing layer 242 does not cover the sides of the light-emitting layer 132 . Secondly, the light L1 can pass through the light-transmitting material 241 and pass through the light-transmitting material 241 .

因此,發光層132所產生的光線L1能從發光元件130側邊與底面入射於透光材料241內。在透光材料241內傳遞的光線L1可以入射於凹槽R1下方的金屬圖案層112a、112b、112c與112d,以使光線L1能被金屬圖案層112a、112b、112c與112d反射,以增加發光面板200的亮度。Therefore, the light L1 generated by the light-emitting layer 132 can enter the light-transmitting material 241 from the side and bottom of the light-emitting element 130 . The light L1 transmitted in the light-transmitting material 241 can be incident on the metal pattern layers 112a, 112b, 112c, and 112d below the groove R1, so that the light L1 can be reflected by the metal pattern layers 112a, 112b, 112c, and 112d to increase luminescence The brightness of the panel 200.

值得一提的是,發光面板200包括畫素陣列基板110,因此在同一個次畫素區111s中,例如在各個次畫素區111s中,這些金屬圖案層112a、112b、112c與112d會遮蓋發光元件130的整個底面。如此,從發光元件130側邊與底面入射於透光材料241的光線L1會被金屬圖案層112a、112b、112c與112d遮擋與反射,以使發光面板200僅在其中一側呈現影像。It is worth mentioning that the light-emitting panel 200 includes the pixel array substrate 110, so in the same sub-pixel region 111s, for example, in each sub-pixel region 111s, these metal pattern layers 112a, 112b, 112c and 112d will cover The entire bottom surface of the light emitting element 130 . In this way, the light L1 incident on the light-transmitting material 241 from the side and bottom of the light-emitting element 130 will be blocked and reflected by the metal pattern layers 112a, 112b, 112c, and 112d, so that only one side of the light-emitting panel 200 presents an image.

圖3是本發明另一實施例的發光面板的剖面示意圖。請參閱圖3,本實施例的發光面板300相似於前述發光面板200,惟發光面板300與200兩者之間的唯一差異僅在於發光面板300所包括的填充材料340不同於填充材料240。以下主要說明發光面板300與200之間的差異。發光面板300與200兩者相同特徵原則上不再重複敘述。FIG. 3 is a schematic cross-sectional view of a light-emitting panel according to another embodiment of the present invention. Referring to FIG. 3 , the light emitting panel 300 of this embodiment is similar to the light emitting panel 200 mentioned above, but the only difference between the light emitting panels 300 and 200 is that the filling material 340 included in the light emitting panel 300 is different from the filling material 240 . The differences between the light emitting panels 300 and 200 are mainly described below. In principle, the same features of the light-emitting panels 300 and 200 will not be described repeatedly.

發光面板300包括至少一個填充材料340。以圖3為例,發光面板300可包括多個填充材料340,其中這些填充材料340分別填入於這些凹槽R1內。有別於前述填充材料240,各個填充材料340可包括反光材料341與吸光層242。反光材料341填入於凹槽R1內,而吸光層242設置於反光材料341上,並覆蓋反光材料341。吸光層242也圍繞凹槽R1內的發光元件130,且不覆蓋出光頂面131,以避免遮擋從出光頂面131出射的光線L1。The light emitting panel 300 includes at least one filling material 340 . Taking FIG. 3 as an example, the light emitting panel 300 may include a plurality of filling materials 340, wherein the filling materials 340 are respectively filled in the grooves R1. Different from the aforementioned filling material 240 , each filling material 340 may include a reflective material 341 and a light absorbing layer 242 . The reflective material 341 is filled in the groove R1 , and the light absorbing layer 242 is disposed on the reflective material 341 and covers the reflective material 341 . The light absorbing layer 242 also surrounds the light emitting element 130 in the groove R1 and does not cover the light emitting top surface 131 to avoid blocking the light L1 emitted from the light emitting top surface 131 .

反光材料341與吸光層242兩者形成方法可以彼此相同,其中反光材料341與吸光層242兩者可以利用印刷(例如噴墨)而形成。不同於吸光層242,反光材料341可以是白色膠材,並具有白色染料,例如二氧化鈦。因此,反光材料341的顏色為白色,並能反射可見光。The forming methods of the reflective material 341 and the light absorbing layer 242 may be the same, wherein both the reflective material 341 and the light absorbing layer 242 may be formed by printing (such as inkjet). Different from the light-absorbing layer 242, the reflective material 341 can be a white rubber material with a white dye, such as titanium dioxide. Therefore, the reflective material 341 is white in color and can reflect visible light.

在圖3所示的實施例中,發光層132相對於畫素陣列基板110的高度小於反光材料341的上表面相對於畫素陣列基板110的高度。換句話說,反光材料341可覆蓋發光層132的側邊,但吸光層242不覆蓋發光層132的側邊,以使發光層132所產生的光線L1能從發光元件130側邊入射於反光材料341。由於反光材料341能反射可見光,因此反光材料341能反射從發光元件130側邊而來的光線L1,從而增加發光面板300的亮度。In the embodiment shown in FIG. 3 , the height of the light emitting layer 132 relative to the pixel array substrate 110 is smaller than the height of the upper surface of the reflective material 341 relative to the pixel array substrate 110 . In other words, the reflective material 341 can cover the sides of the light-emitting layer 132, but the light-absorbing layer 242 does not cover the sides of the light-emitting layer 132, so that the light L1 generated by the light-emitting layer 132 can enter the light-reflecting material from the side of the light-emitting element 130 341. Since the reflective material 341 can reflect visible light, the reflective material 341 can reflect the light L1 coming from the side of the light emitting element 130 , thereby increasing the brightness of the light emitting panel 300 .

圖4是本發明另一實施例的發光面板的剖面示意圖。請參閱圖4,本實施例的發光面板400相似於前述發光面板300,而發光面板400與300兩者之間的主要差異在於發光面板400所包括的畫素陣列基板410。以下主要說明發光面板400與300之間的差異。發光面板400與300兩者相同特徵原則上不再重複敘述。FIG. 4 is a schematic cross-sectional view of a light-emitting panel according to another embodiment of the present invention. Please refer to FIG. 4 , the light emitting panel 400 of this embodiment is similar to the aforementioned light emitting panel 300 , and the main difference between the light emitting panels 400 and 300 lies in the pixel array substrate 410 included in the light emitting panel 400 . The differences between the light emitting panels 400 and 300 are mainly described below. In principle, the same features of the light-emitting panels 400 and 300 will not be described repeatedly.

本實施例的畫素陣列基板410相似於前述實施例的畫素陣列基板110。例如,畫素陣列基板410也包括多個金屬圖案層112a、112b、112c與112d以及基板119。不過,有別於畫素陣列基板110,畫素陣列基板410包括較少數量的絕緣層。具體而言,畫素陣列基板410也包括絕緣層113a、113b、113c、113d、115a與115b,但未包括絕緣層113e與115c。因此,相較於畫素陣列基板110,畫素陣列基板410所包括的絕緣層的數量較少。The pixel array substrate 410 of this embodiment is similar to the pixel array substrate 110 of the previous embodiment. For example, the pixel array substrate 410 also includes a plurality of metal pattern layers 112 a , 112 b , 112 c and 112 d and a substrate 119 . However, different from the pixel array substrate 110, the pixel array substrate 410 includes a smaller number of insulating layers. Specifically, the pixel array substrate 410 also includes the insulating layers 113a, 113b, 113c, 113d, 115a and 115b, but does not include the insulating layers 113e and 115c. Therefore, compared with the pixel array substrate 110 , the number of insulating layers included in the pixel array substrate 410 is less.

由於畫素陣列基板410未包括絕緣層113e與115c,因此在本實施例中,透光圖案層122與黑矩陣層121皆設置於絕緣層113d上,並可直接接觸絕緣層113d。比較圖3與圖4,也可看出圖4中的透光圖案層122與黑矩陣層121的厚度分別大於圖3中的透光圖案層122與黑矩陣層121的厚度。另外,有別於圖3所示的發光面板300,圖4實施例所示的發光面板400還包括平坦層460,其中平坦層460覆蓋透光圖案層122與黑矩陣層121,但可不覆蓋發光元件130與填充材料340。Since the pixel array substrate 410 does not include the insulating layers 113e and 115c, in this embodiment, the transparent pattern layer 122 and the black matrix layer 121 are both disposed on the insulating layer 113d and can directly contact the insulating layer 113d. Comparing FIG. 3 and FIG. 4 , it can also be seen that the thicknesses of the light-transmitting pattern layer 122 and the black matrix layer 121 in FIG. 4 are respectively greater than the thicknesses of the light-transmitting pattern layer 122 and the black matrix layer 121 in FIG. 3 . In addition, different from the light-emitting panel 300 shown in FIG. 3, the light-emitting panel 400 shown in the embodiment of FIG. Component 130 and filler material 340 .

圖5是本發明另一實施例的發光面板的剖面示意圖。請參閱圖5,本實施例的發光面板500與前述實施例的發光面板200相似。以下僅說明發光面板500不同於發光面板200的差異特徵。發光面板500與200相同特徵原則上不再重複敘述。FIG. 5 is a schematic cross-sectional view of a light-emitting panel according to another embodiment of the present invention. Please refer to FIG. 5 , the light emitting panel 500 of this embodiment is similar to the light emitting panel 200 of the previous embodiment. Only the different features of the light emitting panel 500 from the light emitting panel 200 will be described below. In principle, the same features of the light-emitting panels 500 and 200 will not be repeated.

發光面板500包括畫素陣列基板510。與畫素陣列基板110相似,畫素陣列基板510包括多個金屬圖案層512a、512b、512c與512d以及基板119,其中這些金屬圖案層512a、512b、512c與512d分別與前述實施例中的金屬圖案層112a、112b、112c與112d相似。然而,不同前述畫素陣列基板110,在畫素陣列基板510的同一個次畫素區511s中,例如在各個次畫素區511s中,發光元件130於基板119上的垂直投影至少一部分不與這些金屬圖案層512a、512b、512c以及512d於基板119上的垂直投影垂疊。The light emitting panel 500 includes a pixel array substrate 510 . Similar to the pixel array substrate 110, the pixel array substrate 510 includes a plurality of metal pattern layers 512a, 512b, 512c, and 512d and a substrate 119, wherein these metal pattern layers 512a, 512b, 512c, and 512d are respectively the same as the metal pattern layers in the foregoing embodiments. The pattern layers 112a, 112b, 112c are similar to 112d. However, unlike the aforementioned pixel array substrate 110, in the same sub-pixel region 511s of the pixel array substrate 510, for example, in each sub-pixel region 511s, at least a part of the vertical projection of the light-emitting element 130 on the substrate 119 is not consistent with The vertical projections of the metal pattern layers 512 a , 512 b , 512 c and 512 d on the substrate 119 overlap.

具體而言,在圖5所示的實施例中,這些金屬圖案層512a、512b、512c與512d於基板119上的垂直投影出多個投影區域MP5,而各個發光元件130也會於基板119上的垂直投影出多個投影區域CP5(圖5僅繪示一個),其中投影區域MP5與投影區域CP5部分重疊,而投影區域CP5中的透光區域LA5未與投影區域MP5重疊。換句話說,投影區域CP5有一部分(即透光區域LA5)並未與投影區域CP5重疊。Specifically, in the embodiment shown in FIG. 5 , the metal pattern layers 512a, 512b, 512c, and 512d vertically project a plurality of projection areas MP5 on the substrate 119, and each light emitting element 130 is also formed on the substrate 119. The vertical projection of multiple projection areas CP5 (only one is shown in FIG. 5 ), wherein the projection area MP5 partially overlaps with the projection area CP5, and the light-transmitting area LA5 in the projection area CP5 does not overlap with the projection area MP5. In other words, a part of the projection area CP5 (ie, the light-transmitting area LA5 ) does not overlap with the projection area CP5 .

因此,這些金屬圖案層512a、512b、512c以及512d不會遮蓋發光元件130的整個底面,以使從發光元件130底面進入透光材料241內的光線L1能穿透這些金屬圖案層512a、512b、512c與512d而從下方的基板119與抗反射層152出射。如此,發光面板500的相對兩側可以同時顯示影像。Therefore, these metal pattern layers 512a, 512b, 512c, and 512d do not cover the entire bottom surface of the light-emitting element 130, so that the light L1 entering the light-transmitting material 241 from the bottom surface of the light-emitting element 130 can pass through these metal pattern layers 512a, 512b, 512c and 512d are emitted from the substrate 119 and the anti-reflection layer 152 below. In this way, images can be displayed on opposite sides of the light emitting panel 500 at the same time.

以下表(一)與表(二)是根據以上實施例,設計多種發光面板,並量測這些發光面板的反射率而得到的結果。須先說明的是,在表(一)與表(二)中,這些發光面板所採用的發光元件130為兩種尺寸不同的微型發光二極體。一種是尺寸較大,寬度與長度為34微米×58微米的微型發光二極體。另一種是尺寸較小,寬度與長度為20微米×40微米的微型發光二極體。Tables (1) and (2) below are the results obtained by designing various light-emitting panels and measuring the reflectance of these light-emitting panels according to the above embodiments. It should be noted that in Table (1) and Table (2), the light-emitting elements 130 used in these light-emitting panels are two types of miniature light-emitting diodes with different sizes. One is a miniature light-emitting diode with a larger size, with a width and length of 34 microns x 58 microns. The other is a miniature light-emitting diode with a smaller size, width and length of 20 microns x 40 microns.

另外,表(一)與表(二)所示的這些發光面板更採用兩種不同的黑矩陣層121,其中一種黑矩陣層121具有較高的折射率,並在表(一)與表(二)中以「BM高折射率」來表示。另一種黑矩陣層121具有較低的折射率,並在表(一)與表(二)中以「BM低折射率」來表示。In addition, the light-emitting panels shown in Table (1) and Table (2) use two different black matrix layers 121, one of which has a higher refractive index, and is shown in Table (1) and Table ( 2) is represented by "BM high refractive index". Another type of black matrix layer 121 has a lower refractive index, and is represented by "BM low refractive index" in Table (1) and Table (2).

高折射率的黑矩陣層121(即BM高折射率)成分含有折射率偏高的材料,其可以是無機粒子,其中此無機粒子例如是由二氧化鈦所製成。低折射率的黑矩陣層121(即BM低折射率)成分含有折射率偏低的材料,其可以是氣體。例如,低折射率的黑矩陣層121可含有多個微氣泡,其中各個微氣泡的寬度(即粒徑)可在550奈米以下,而微氣泡內的氣體可以是空氣或氮氣。The composition of the black matrix layer 121 with a high refractive index (ie, BM high refractive index) contains a material with a relatively high refractive index, which may be inorganic particles, wherein the inorganic particles are made of titanium dioxide, for example. The black matrix layer 121 with a low refractive index (ie BM low refractive index) contains a material with a relatively low refractive index, which may be a gas. For example, the low-refractive-index black matrix layer 121 may contain a plurality of microbubbles, wherein the width (ie particle size) of each microbubble may be below 550 nm, and the gas inside the microbubbles may be air or nitrogen.

組別 黑矩陣層 121 填充材料 140 抗反射層 152 發光元件130 34微米×58微米 20微米×40微米 BM高 折射率 BM低 折射率 BM高 折射率 BM低 折射率 0 22.0% 21.8% 1 12.3% 12.2% 11.9% 11.8% 2 20.2% 18.6% 3 單層 19.2% 19.0% 4 雙層 16.8% 16.6% 5 10.5% 10.4% 8.8% 8.6% 6 單層 8.3% 8.1% 7.9% 7.7% 7 雙層 5.9% 5.7% 5.5% 5.3% 8 單層 6.5% 6.2% 4.7% 4.4% 9 雙層 4.1% 3.8% 2.3% 2.0% 表(一) group Black matrix layer 121 Filling material 140 Anti-reflection layer 152 Light emitting element 130 34 microns x 58 microns 20 microns x 40 microns BM High Refractive Index BM Low Refractive Index BM High Refractive Index BM Low Refractive Index 0 none none none 22.0% 21.8% 1 have none none 12.3% 12.2% 11.9% 11.8% 2 none have none 20.2% 18.6% 3 none none single layer 19.2% 19.0% 4 none none double layer 16.8% 16.6% 5 have have none 10.5% 10.4% 8.8% 8.6% 6 have none single layer 8.3% 8.1% 7.9% 7.7% 7 have none double layer 5.9% 5.7% 5.5% 5.3% 8 have have single layer 6.5% 6.2% 4.7% 4.4% 9 have have double layer 4.1% 3.8% 2.3% 2.0% Table I)

表(一)中的組別0為對照組,而組別0的發光面板不包括黑矩陣層121、填充材料140及抗反射層152,即組別0的發光面板基本上僅包括發光元件130與畫素陣列基板110。從表(一)來看,在無黑矩陣層121、填充材料140與抗反射層152的條件下,大尺寸的發光元件130(寬度為34微米,長度為58微米)具有22%的反射率,而小尺寸的發光元件130(寬度為20微米,長度為40微米)具有21.8%的反射率。Group 0 in Table (1) is the control group, and the light-emitting panel of group 0 does not include the black matrix layer 121, the filling material 140 and the anti-reflection layer 152, that is, the light-emitting panel of group 0 basically only includes the light-emitting element 130 and the pixel array substrate 110 . From Table (1), under the condition of no black matrix layer 121, filling material 140 and anti-reflection layer 152, the large-sized light-emitting element 130 (34 microns in width and 58 microns in length) has a reflectivity of 22%. , while the small-sized light-emitting element 130 (with a width of 20 micrometers and a length of 40 micrometers) has a reflectivity of 21.8%.

組別1及5至9為包括黑矩陣層121的發光面板。相較於組別0的對照組,組別1及5至9的發光面板明顯具有偏低的反射率,其可在12.5%以下。例如,在組別1中,具有「BM高折射率」與大尺寸發光元件130(34微米×58微米)的發光面板具有12.3%的反射率。Groups 1 and 5 to 9 are light emitting panels including a black matrix layer 121 . Compared with the control group of group 0, the light-emitting panels of groups 1 and 5 to 9 obviously have lower reflectance, which can be below 12.5%. For example, in group 1, the light-emitting panel with "BM high refractive index" and large-sized light-emitting elements 130 (34 microns x 58 microns) has a reflectivity of 12.3%.

其他包括填充材料140與抗反射層152其中至少一者,但不包括任何黑矩陣層121的發光面板,即組別2至4,具有16.6%的最小反射率以及20.2%的最大反射率。由此可知,相較於填充材料140與抗反射層152,黑矩陣層121更能有效地大幅降低反射率。Other light-emitting panels including at least one of the filling material 140 and the anti-reflection layer 152 but not including any black matrix layer 121 , ie groups 2 to 4, had a minimum reflectance of 16.6% and a maximum reflectance of 20.2%. It can be seen that, compared with the filling material 140 and the anti-reflection layer 152 , the black matrix layer 121 is more effective in greatly reducing the reflectivity.

值得一提的是,34微米×58微米的發光元件130之尺寸大於20微米×40微米的發光元件130之尺寸,所以在同一組別中,34微米×58微米的發光元件130反射率必然會大於20微米×40微米的發光元件130反射率。此外,兩兩比較表(一)中的組別3與4、組別6與7,以及組別8與9,可以看出抗反射層152確實能有效降低反射率,其中雙層抗反射層152降低反射率的效果比單層抗反射層152降低反射率的效果較為顯著。It is worth mentioning that the size of the light-emitting element 130 of 34 microns x 58 microns is larger than that of the light-emitting element 130 of 20 microns x 40 microns, so in the same group, the reflectivity of the light-emitting element 130 of 34 microns x 58 microns is bound to be higher. The reflectance of the light emitting element 130 is larger than 20 microns×40 microns. In addition, comparing groups 3 and 4, groups 6 and 7, and groups 8 and 9 in Table (1), it can be seen that the anti-reflection layer 152 can effectively reduce the reflectivity, and the double-layer anti-reflection layer The effect of reducing the reflectivity of the anti-reflective layer 152 is more significant than that of the single-layer anti-reflection layer 152 .

低折射率的黑矩陣層121能促使發光面板的反射率下降,所以在同一組別中,在尺寸相同的條件下,「BM低折射率」具有較低的反射率。雖然低折射率的黑矩陣層121能促使發光面板的反射率下降,但從表(一)來看,在反射率未小於5%的情況下,低折射率的黑矩陣層121降低反射率的效果有限,例如組別1、5至7及組別8的34微米×58微米發光元件130。在反射率小於5%的情況下,例如組別9以及組別8的20微米×40微米發光元件130,低折射率的黑矩陣層121能比較顯著地降低反射率。The low refractive index black matrix layer 121 can reduce the reflectivity of the light-emitting panel, so in the same group, under the condition of the same size, "BM low refractive index" has a lower reflectivity. Although the black matrix layer 121 with a low refractive index can reduce the reflectivity of the light-emitting panel, as shown in Table (1), when the reflectivity is not less than 5%, the black matrix layer 121 with a low refractive index reduces the reflectivity. The effect is limited, such as the 34 micron×58 micron light-emitting element 130 of Group 1, 5-7 and Group 8. When the reflectance is less than 5%, such as the 20 micron×40 micron light-emitting elements 130 of Group 9 and Group 8, the low refractive index black matrix layer 121 can significantly reduce the reflectance.

組別 填充材料 發光元件下方的金屬圖案層 抗反射層 152 發光元件130 34微米×58微米 34微米×58微米 BM高 折射率 BM高 折射率 BM高 折射率 BM高 折射率 10-1 140 單層 6.5% 6.2% 4.7% 4.4% 10-2 140 雙層 4.1% 3.8% 2.3% 2.0% 11-1 340 鈦/鋁/鈦 單層 7.1% 6.9% 4.9% 4.6% 11-2 340 鈦/鋁/鈦 雙層 4.7% 4.5% 2.5% 2.2% 12-1 340 鋁/鈦 單層 7.9% 7.6% 5.2% 4.9% 12-2 340 鋁/鈦 雙層 5.5% 5.2% 2.8% 2.5% 表(二) group Filler Metal pattern layer under the light emitting element Anti-reflection layer 152 Light emitting element 130 34 microns x 58 microns 34 microns x 58 microns BM High Refractive Index BM High Refractive Index BM High Refractive Index BM High Refractive Index 10-1 140 single layer 6.5% 6.2% 4.7% 4.4% 10-2 140 double layer 4.1% 3.8% 2.3% 2.0% 11-1 340 Titanium/Aluminum/Titanium single layer 7.1% 6.9% 4.9% 4.6% 11-2 340 Titanium/Aluminum/Titanium double layer 4.7% 4.5% 2.5% 2.2% 12-1 340 Aluminum/Titanium single layer 7.9% 7.6% 5.2% 4.9% 12-2 340 Aluminum/Titanium double layer 5.5% 5.2% 2.8% 2.5% Table II)

表(二)中的所有組別都有採用黑矩陣層121、填充材料140與340。可以看出,採用填充材料140(例如黑色膠材)的組別10-1與10-2皆具有偏低的反射率。雖然採用填充材料340(包括反光材料341)的組別11-1、11-2、12-1與12-2具有較高的反射率,但組別11-1、11-2、12-1與12-2的反射率都在8%以下,例如在組別12-1中,具有「BM高折射率」與34微米×58微米發光元件130的發光面板具有7.9%的反射率。因此,填充材料340依然能幫助降低發光面板的反射率。All groups in Table (2) use the black matrix layer 121 and the filling materials 140 and 340 . It can be seen that both the groups 10-1 and 10-2 using the filling material 140 (such as black glue) have relatively low reflectivity. Although the groups 11-1, 11-2, 12-1, and 12-2 using the filling material 340 (including the reflective material 341) have higher reflectivity, the groups 11-1, 11-2, and 12-1 The reflectivity of both group 12-2 and 12-2 is below 8%. For example, in group 12-1, the light-emitting panel with "BM high refractive index" and 34 micron x 58 micron light-emitting elements 130 has a reflectance of 7.9%. Therefore, the filling material 340 can still help reduce the reflectivity of the light emitting panel.

雖然填充材料340降低反射率的效果不及於填充材料140,但填充材料340的反光材料341能反射光線L1。因此,填充材料340能增加發光面板的亮度,並提升50%至70%的光學效率。此外,填充材料240降低反射率的效果也不及於填充材料140,但填充材料240的透光材料241能使光線L1被金屬圖案層112a、112b、112c與112d(或圖5中的金屬圖案層512a、512b、512c與512d)反射,以增加發光面板的亮度,並提升30%至40%的光學效率。Although the effect of the filling material 340 on reducing the reflectivity is not as good as that of the filling material 140 , the reflective material 341 of the filling material 340 can reflect the light L1 . Therefore, the filling material 340 can increase the brightness of the light-emitting panel and improve the optical efficiency by 50% to 70%. In addition, the effect of the filling material 240 on reducing the reflectivity is not as good as that of the filling material 140, but the light-transmitting material 241 of the filling material 240 can make the light L1 be transmitted by the metal pattern layers 112a, 112b, 112c and 112d (or the metal pattern layer in FIG. 5 512a, 512b, 512c, and 512d) to increase the brightness of the light-emitting panel and increase the optical efficiency by 30% to 40%.

在表(二)中,「發光元件下方的金屬圖案層」,例如是金屬圖案層112c(或是圖5中的金屬圖案層512c),可以是三層結構或兩層結構。三層結構包括一層鋁金屬層與兩層鈦金屬層,其中鋁金屬層夾置在這兩層鈦金屬層之間,而表(二)所示的「鈦/鋁/鈦」代表上述三層結構。兩層結構包括一層鋁金屬層與一層鈦金屬層,其中鋁金屬層較接近發光元件130,而表(二)所示的「鋁/鈦」代表上述兩層結構。由於鋁金屬本身的反射率比鈦金屬高,所以組別12-1與12-2的發光面板反射率普遍會比組別11-1與11-2的發光面板反射率高,如表(二)所示。In Table (2), "the metal pattern layer under the light-emitting element", such as the metal pattern layer 112c (or the metal pattern layer 512c in FIG. 5 ), can be a three-layer structure or a two-layer structure. The three-layer structure includes one aluminum metal layer and two titanium metal layers, wherein the aluminum metal layer is sandwiched between the two titanium metal layers, and the "titanium/aluminum/titanium" shown in Table (2) represents the above three layers structure. The two-layer structure includes an aluminum metal layer and a titanium metal layer, wherein the aluminum metal layer is closer to the light-emitting element 130, and the "aluminum/titanium" shown in Table (2) represents the above two-layer structure. Since the reflectivity of aluminum itself is higher than that of titanium, the reflectivity of the luminous panels of groups 12-1 and 12-2 is generally higher than that of luminous panels of groups 11-1 and 11-2, as shown in Table (2) ) shown.

圖6是本發明另一實施例的發光面板的俯視示意圖。請參閱圖6,本實施例的發光面板600與前述實施例的發光面板100相似,而以下主要敘述發光面板600不同於前述實施例的差異特徵。發光面板600與100兩者相同特徵原則上不再重複敘述。FIG. 6 is a schematic top view of a light-emitting panel according to another embodiment of the present invention. Please refer to FIG. 6 , the light-emitting panel 600 of this embodiment is similar to the light-emitting panel 100 of the previous embodiment, and the differences between the light-emitting panel 600 and the previous embodiment are mainly described below. In principle, the same features of the light emitting panels 600 and 100 will not be described again.

發光面板600包括畫素陣列基板610、黑矩陣層621以及透光圖案層(未標示),其中畫素陣列基板610具有多個次畫素區111s、多個透光區611t、多條走線DL6與SL6。透光圖案層包括多個分布於透光區611t的透光層622p。走線SL6沿著第一方向D1延伸,而走線DL6沿著第二方向D2延伸。此外,走線DL6與走線T41兩者的結構與功能可以相同,而走線SL6與走線T11兩者的結構與功能也可以相同。The light-emitting panel 600 includes a pixel array substrate 610, a black matrix layer 621, and a light-transmitting pattern layer (not shown), wherein the pixel array substrate 610 has a plurality of sub-pixel regions 111s, a plurality of light-transmitting regions 611t, and a plurality of routing lines DL6 and SL6. The transparent pattern layer includes a plurality of transparent layers 622p distributed in the transparent region 611t. The trace SL6 extends along the first direction D1, and the trace DL6 extends along the second direction D2. In addition, the structure and function of the line DL6 and the line T41 may be the same, and the structure and function of the line SL6 and the line T11 may also be the same.

有別於前述發光面板100,在發光面板600中,黑矩陣層621覆蓋這些走線DL6與SL6,並沿著部分這些走線DL6與SL6而圍繞出一個透光層622p,其中至少一個透光層622p的形狀為L形。以圖6為例,各個透光區611t與各個透光層622p兩者的形狀都是L形。Different from the aforementioned light-emitting panel 100, in the light-emitting panel 600, the black matrix layer 621 covers these wirings DL6 and SL6, and surrounds a light-transmitting layer 622p along some of these wirings DL6 and SL6, at least one of which is light-transmitting Layer 622p is L-shaped in shape. Taking FIG. 6 as an example, the shapes of each light-transmitting region 611t and each light-transmitting layer 622p are L-shaped.

各個L形的透光層622p可被八個群體GR1(相當於主畫素區),其中透光區611t與透光層622p兩者尺寸皆大於前述實施例中的透光區111t與透光層122p。因此,本實施例的透光圖案層能降低光的繞射,減少多階光與高頻光的強度,以降低穿透影像的邊緣模糊程度,從而提升發光面板600的影像品質。Each L-shaped light-transmitting layer 622p can be divided into eight groups GR1 (equivalent to the main pixel area), wherein both the light-transmitting area 611t and the light-transmitting layer 622p are larger than the light-transmitting area 111t and the light-transmitting area 111t in the previous embodiment. Layer 122p. Therefore, the light-transmitting pattern layer of this embodiment can reduce the diffraction of light, reduce the intensity of multi-order light and high-frequency light, so as to reduce the edge blur of the transmitted image, thereby improving the image quality of the light-emitting panel 600 .

圖7A至圖7C是本發明其他多個實施例的發光面板的俯視示意圖。圖7A至圖7C所揭露的發光面板700a、700b與700c皆與前述實施例相似,其中發光面板700a、700b與700c每一者也包括多條走線DL6與SL6以及黑矩陣層(例如黑矩陣層621,圖7A至圖7C未繪示),而黑矩陣層覆蓋這些走線DL6與SL6。下文僅說明發光面板700a、700b與700c不同於前述實施例的差異特徵。至於前述實施例與圖7A至圖7C實施例的相同特徵,以下不再重複敘述。7A to 7C are schematic top views of light-emitting panels in other embodiments of the present invention. The light-emitting panels 700a, 700b and 700c disclosed in FIGS. 7A to 7C are similar to the foregoing embodiments, wherein each of the light-emitting panels 700a, 700b and 700c also includes a plurality of wiring lines DL6 and SL6 and a black matrix layer (such as a black matrix layer 621 , not shown in FIGS. 7A to 7C ), and the black matrix layer covers these wires DL6 and SL6 . Only the different features of the light emitting panels 700a, 700b and 700c from the previous embodiments will be described below. As for the same features of the aforementioned embodiment and the embodiment of FIG. 7A to FIG. 7C , they will not be repeated below.

不同於前述實施例,發光面板700a、700b與700c三者所具有的主畫素區的形狀皆不同於前述實施例。請參閱圖7A,例如,圖7A中的主畫素區M71之形狀為矩形,其中主畫素區M71的長邊沿著第一方向D1延伸,短邊則沿著第二方向D2延伸。不過,在其他實施例中,主畫素區M71的長邊可沿著第二方向D2延伸,短邊可沿著第一方向D1延伸。請參閱圖7B與圖7C,其他圖7B與圖7C分別呈現形狀為圓形的主畫素區M72與不規則形狀的主畫素區M73。Different from the foregoing embodiments, the shapes of the main pixel regions of the light emitting panels 700a, 700b and 700c are all different from the foregoing embodiments. Please refer to FIG. 7A , for example, the shape of the main pixel area M71 in FIG. 7A is a rectangle, wherein the long side of the main pixel area M71 extends along the first direction D1, and the short side extends along the second direction D2. However, in other embodiments, the long side of the main pixel region M71 may extend along the second direction D2, and the short side may extend along the first direction D1. Please refer to FIG. 7B and FIG. 7C . Other FIG. 7B and FIG. 7C respectively present a circular main pixel area M72 and an irregular main pixel area M73 .

綜上所述,由於外界光線能穿透分布於透光區內的透光圖案層,因此相較於現有常見的不透明顯示面板,本發明至少一實施例所揭示的發光面板可具有較廣的應用範圍。例如,在車用顯示器方面,以上實施例的發光面板因為能讓外界光線穿透,所以不會遮擋駕駛員的視線,從而適合直接裝設於擋風玻璃上而作為抬頭顯示器(HUD)。同理,上述實施例的發光面板也適合直接裝設於安全帽的面罩上或眼鏡上,故也適用於穿戴裝置。To sum up, since external light can pass through the light-transmitting pattern layer distributed in the light-transmitting area, compared with the existing common opaque display panels, the light-emitting panel disclosed in at least one embodiment of the present invention can have a wider application range. For example, in terms of vehicle displays, the luminescent panels of the above embodiments do not block the driver's line of sight because they allow external light to pass through, so they are suitable for being directly installed on the windshield as a head-up display (HUD). Similarly, the light-emitting panels of the above embodiments are also suitable for being directly installed on the visor of a safety helmet or glasses, and thus are also suitable for wearing devices.

雖然本發明已以實施例揭露如上,然其並非用以限制本發明,本發明所屬技術領域中具有通常知識者,在不脫離本發明精神和範圍內,當可作些許更動與潤飾,因此本發明保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed above with the embodiments, it is not intended to limit the present invention. Those with ordinary knowledge in the technical field of the present invention can make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, this The protection scope of the invention shall be defined by the scope of the appended patent application.

100、200、300、400、500、600、700a、700b、700c:發光面板 110、410、510、610:畫素陣列基板 111s、511s:次畫素區 111t、611t:透光區 112a、112b、112c、112d、512a、512b、512c、512d:金屬圖案層 113a、113b、113c、113d、113e、115a、115b、115c:絕緣層 114b、114c、114d、114s:接觸窗 119:基板 119n:法線方向 121、621:黑矩陣層 121g:凸出長度 122:透光圖案層 122p、622p:透光層 130:發光元件 131:出光頂面 132:發光層 140、240、340:填充材料 151:透明層 152:抗反射層 241:透光材料 242:吸光層 341:反光材料 460:平坦層 CP5:投影區域 D1:第一方向 D2:第二方向 DL6、SL6、T11、T41:走線 E12:邊緣 G1:高度差 GR1:群體 L1:光線 LA5:透光區域 M71、M72、M73:主畫素區 MP1:垂直投影面積 MP5:投影區域 P41:接墊 R1:凹槽 RA1:保留區 SB1:連接件 TC1:半導體層 TG1:閘極 TT1:主動元件 100, 200, 300, 400, 500, 600, 700a, 700b, 700c: Luminous panel 110, 410, 510, 610: pixel array substrate 111s, 511s: sub-pixel area 111t, 611t: Translucent area 112a, 112b, 112c, 112d, 512a, 512b, 512c, 512d: metal pattern layer 113a, 113b, 113c, 113d, 113e, 115a, 115b, 115c: insulating layer 114b, 114c, 114d, 114s: contact window 119: Substrate 119n: normal direction 121, 621: black matrix layer 121g: protruding length 122: Light-transmitting pattern layer 122p, 622p: transparent layer 130: Light emitting element 131: light top surface 132: luminescent layer 140, 240, 340: filling material 151: transparent layer 152: anti-reflection layer 241: Translucent material 242: light absorbing layer 341: reflective material 460: flat layer CP5: projection area D1: the first direction D2: Second direction DL6, SL6, T11, T41: wiring E12: Edge G1: height difference GR1: group L1: light LA5: Translucent area M71, M72, M73: main pixel area MP1: vertical projected area MP5: Projection area P41: Pad R1: Groove RA1: reserved area SB1: connector TC1: Semiconductor layer TG1: gate TT1: active component

圖1A是本發明至少一實施例的發光面板的俯視示意圖。 圖1B是圖1A中的發光面板的局部放大示意圖。 圖1C是圖1B中沿線1C-1C剖面而繪製的剖面示意圖。 圖1D是圖1C的局部放大示意圖。 圖2是本發明另一實施例的發光面板的剖面示意圖。 圖3是本發明另一實施例的發光面板的剖面示意圖。 圖4是本發明另一實施例的發光面板的剖面示意圖。 圖5是本發明另一實施例的發光面板的剖面示意圖。 圖6是本發明另一實施例的發光面板的俯視示意圖。 圖7A是本發明另一實施例的發光面板的俯視示意圖。 圖7B是本發明另一實施例的發光面板的俯視示意圖。 圖7C是本發明另一實施例的發光面板的俯視示意圖。 FIG. 1A is a schematic top view of a light-emitting panel according to at least one embodiment of the present invention. FIG. 1B is a partially enlarged schematic view of the light emitting panel in FIG. 1A . FIG. 1C is a schematic cross-sectional view taken along line 1C-1C in FIG. 1B . FIG. 1D is a partially enlarged schematic view of FIG. 1C . FIG. 2 is a schematic cross-sectional view of a light-emitting panel according to another embodiment of the present invention. FIG. 3 is a schematic cross-sectional view of a light-emitting panel according to another embodiment of the present invention. FIG. 4 is a schematic cross-sectional view of a light-emitting panel according to another embodiment of the present invention. FIG. 5 is a schematic cross-sectional view of a light-emitting panel according to another embodiment of the present invention. FIG. 6 is a schematic top view of a light-emitting panel according to another embodiment of the present invention. FIG. 7A is a schematic top view of a light-emitting panel according to another embodiment of the present invention. FIG. 7B is a schematic top view of a light-emitting panel according to another embodiment of the present invention. FIG. 7C is a schematic top view of a light-emitting panel according to another embodiment of the present invention.

100:發光面板 100: Luminous panel

110:畫素陣列基板 110:Pixel array substrate

111s:次畫素區 111s: sub-pixel area

111t:透光區 111t: Translucent area

121:黑矩陣層 121: Black matrix layer

122p:透光層 122p: transparent layer

130:發光元件 130: Light emitting element

D1:第一方向 D1: the first direction

D2:第二方向 D2: Second direction

GR1:群體 GR1: group

P41:接墊 P41: Pad

RA1:保留區 RA1: reserved area

T11、T41:走線 T11, T41: wiring

Claims (14)

一種發光面板,包括: 一畫素陣列基板,具有多個次畫素區與多個透光區,其中一該次畫素區位於其中至少兩個相鄰的該透光區之間; 多個發光元件,設置於該畫素陣列基板上,並電性連接該畫素陣列基板,其中該些發光元件分別位於該些次畫素區上; 一黑矩陣層,設置於該畫素陣列基板上,且不分布於該些透光區內;以及 一透光圖案層,設置於該畫素陣列基板上,並分布於該些透光區內,其中該黑矩陣層、該透光圖案層與該畫素陣列基板形成多個凹槽,該些凹槽分別位於該些次畫素區上,該些發光元件分別位於該些凹槽內,該黑矩陣層與該透光圖案層共同圍繞位於至少一該凹槽內的該發光元件。 A light emitting panel comprising: A pixel array substrate having a plurality of sub-pixel regions and a plurality of light-transmitting regions, wherein one of the sub-pixel regions is located between at least two adjacent ones of the light-transmitting regions; A plurality of light-emitting elements are arranged on the pixel array substrate and electrically connected to the pixel array substrate, wherein the light-emitting elements are respectively located on the sub-pixel regions; A black matrix layer is arranged on the pixel array substrate and not distributed in the light-transmitting regions; and A light-transmitting pattern layer is arranged on the pixel array substrate and distributed in the light-transmitting regions, wherein the black matrix layer, the light-transmitting pattern layer and the pixel array substrate form a plurality of grooves, and these Grooves are respectively located on the sub-pixel areas, and the light-emitting elements are respectively located in the grooves. The black matrix layer and the light-transmitting pattern layer jointly surround the light-emitting elements located in at least one of the grooves. 如請求項1所述的發光面板,更包括: 多個填充材料,分別填入於該些凹槽內,其中各該發光元件具有一出光頂面,而該些填充材料未覆蓋該些發光元件的該出光頂面。 The luminescent panel as described in claim 1, further comprising: A plurality of filling materials are respectively filled in the grooves, wherein each of the light-emitting elements has a light-emitting top surface, and the filling materials do not cover the light-emitting top surfaces of the light-emitting elements. 如請求項2所述的發光面板,其中該些填充材料其中至少一者為黑色膠材。The light-emitting panel as claimed in claim 2, wherein at least one of the filling materials is a black adhesive material. 如請求項2所述的發光面板,其中該些填充材料其中至少一者包括: 一反光材料,填入於該凹槽內;以及 一吸光層,設置於該反光材料上,並覆蓋該反光材料,其中該吸光層圍繞該凹槽內的其中一該發光元件。 The light-emitting panel as claimed in item 2, wherein at least one of the filling materials includes: a reflective material filled in the groove; and A light-absorbing layer is arranged on the light-reflecting material and covers the light-reflecting material, wherein the light-absorbing layer surrounds one of the light-emitting elements in the groove. 如請求項4所述的發光面板,其中各該發光元件具有一發光層,而該發光層相對於該畫素陣列基板的高度小於該反光材料的上表面相對於該畫素陣列基板的高度。The light-emitting panel as claimed in claim 4, wherein each of the light-emitting elements has a light-emitting layer, and the height of the light-emitting layer relative to the pixel array substrate is smaller than the height of the upper surface of the reflective material relative to the pixel array substrate. 如請求項2所述的發光面板,其中該些填充材料其中至少一者包括: 一透光材料,填入於該凹槽內;以及 一吸光層,設置於該透光材料上,並覆蓋該透光材料,其中該吸光層圍繞該凹槽內的其中一該發光元件。 The light-emitting panel as claimed in item 2, wherein at least one of the filling materials includes: A light-transmitting material is filled in the groove; and A light-absorbing layer is arranged on the light-transmitting material and covers the light-transmitting material, wherein the light-absorbing layer surrounds one of the light-emitting elements in the groove. 如請求項6所述的發光面板,其中各該發光元件具有一發光層,而該發光層相對於該畫素陣列基板的高度小於該透光材料的上表面相對於該畫素陣列基板的高度。The light-emitting panel as described in Claim 6, wherein each of the light-emitting elements has a light-emitting layer, and the height of the light-emitting layer relative to the pixel array substrate is smaller than the height of the upper surface of the light-transmitting material relative to the pixel array substrate . 如請求項1所述的發光面板,其中該黑矩陣層凸出於該透光圖案層的上表面,而該黑矩陣層的上表面與該透光圖案層的上表面兩者高度差小於或等於1.5微米。The light-emitting panel as claimed in item 1, wherein the black matrix layer protrudes from the upper surface of the light-transmitting pattern layer, and the height difference between the upper surface of the black matrix layer and the upper surface of the light-transmitting pattern layer is less than or Equal to 1.5 microns. 如請求項1所述的發光面板,其中該畫素陣列基板包括: 一基板;以及 多個金屬圖案層,設置於該基板之上,並且不與該透光圖案層重疊,其中在同一該次畫素區中,該些金屬圖案層於該基板上的垂直投影完全涵蓋該發光元件於該基板上的垂直投影。 The light-emitting panel as claimed in item 1, wherein the pixel array substrate comprises: a substrate; and A plurality of metal pattern layers are arranged on the substrate and do not overlap with the light-transmitting pattern layer, wherein in the same sub-pixel area, the vertical projection of the metal pattern layers on the substrate completely covers the light emitting element Vertical projection on the substrate. 如請求項1所述的發光面板,其中該畫素陣列基板包括: 一基板;以及 多個金屬圖案層,設置於該基板之上,並且不與該透光圖案層重疊,其中在同一該次畫素區中,該發光元件於該基板上的垂直投影至少一部分不與該些金屬圖案層於該基板上的垂直投影垂疊。 The light-emitting panel as claimed in item 1, wherein the pixel array substrate comprises: a substrate; and A plurality of metal pattern layers are arranged on the substrate and do not overlap with the light-transmitting pattern layer, wherein in the same sub-pixel area, at least a part of the vertical projection of the light-emitting element on the substrate does not overlap with the metal pattern layers. The vertical projection of the pattern layer on the substrate is vertically overlapped. 如請求項1所述的發光面板,其中該畫素陣列基板包括: 一基板;以及 多個金屬圖案層,設置於該基板之上,並且不與該透光圖案層重疊,其中在同一該次畫素區中,該些金屬圖案層於該基板上的垂直投影面積大於或等於該凹槽於該基板上的垂直投影面積的一半。 The light-emitting panel as claimed in item 1, wherein the pixel array substrate comprises: a substrate; and A plurality of metal pattern layers are arranged on the substrate and do not overlap with the light-transmitting pattern layer, wherein in the same sub-pixel area, the vertical projected area of the metal pattern layers on the substrate is greater than or equal to the half of the vertical projected area of the groove on the substrate. 如請求項1所述的發光面板,其中該畫素陣列基板包括: 一基板;以及 多條走線,設置於該基板之上,其中該黑矩陣層沿著該些走線而延伸,並遮蓋該些走線。 The light-emitting panel as claimed in item 1, wherein the pixel array substrate comprises: a substrate; and Multiple traces are arranged on the substrate, wherein the black matrix layer extends along the traces and covers the traces. 如請求項12所述的發光面板,其中該透光圖案層包括多個透光層,而該黑矩陣層沿著部分該些走線而圍繞出其中一該透光層,其中至少一該透光層的形狀為L形。The light-emitting panel as claimed in claim 12, wherein the light-transmitting pattern layer includes a plurality of light-transmitting layers, and the black matrix layer surrounds one of the light-transmitting layers along some of the lines, and at least one of the light-transmitting layers The shape of the photosphere is L-shaped. 如請求項12所述的發光面板,其中該透光圖案層包括多個透光層,而該黑矩陣層沿著其中四條該走線圍繞各該透光層,其中各該透光層的形狀為不對稱形狀。The light-emitting panel as claimed in claim 12, wherein the light-transmitting pattern layer includes a plurality of light-transmitting layers, and the black matrix layer surrounds each of the light-transmitting layers along four of the lines, wherein each of the light-transmitting layers has a shape is an asymmetric shape.
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