TW202312220A - 用於改良的高壓電漿處理的設備 - Google Patents
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Abstract
本文提供了用於高壓電漿處理的設備的實施例。在一些實施例中,該設備包括隔離板和接地支架,用於電漿處理腔室中的基板支撐件(如靜電吸盤)。在一些實施例中,一種用於高壓電漿處理的設備包括:靜電吸盤;與靜電吸盤間隔開的接地回程支架;及介電板,該介電板設置在靜電吸盤和接地回程支架之間。
Description
本揭示案的實施例一般係關於基板處理設備。
電漿處理腔室通常包括用於支撐基板的基板支撐件和與基板支撐件相對設置的靶。靶提供了在處理期間用於濺射到基板上的材料源。RF功率被提供給電漿處理腔室以在靶和基板支撐件之間設置的處理空間中產生電漿。一些電漿製程需要高壓以在基板上實現所需的膜沉積性質和位置(如,為了在基板上設置的特徵中獲得良好的底部覆蓋)。然而,發明人已經觀察到在這種高壓電漿製程期間會發生電弧放電和電漿洩漏。
因此,發明人提供了用於高壓電漿處理的改良設備。
本文提供了用於高壓電漿處理的設備的實施例。在一些實施例中,該設備包括隔離板和接地支架,用於電漿處理腔室中的基板支撐件(如靜電吸盤)。在一些實施例中,電漿處理腔室可以是物理氣相沉積腔室。在一些實施例中,所揭露的隔離板和接地支架配置能夠在高達約480 mTorr的壓力下實現高達約6kW的電漿功率,同時使用極高頻(VHF)頻帶中的RF功率提供電漿。與傳統的基板支撐件設計相比,所揭露的設備的實施例能夠在減少或沒有電弧和/或電漿洩漏的情況下實現穩定的電漿形成。
在一些實施例中,一種用於高壓電漿處理的設備包括:靜電吸盤;與靜電吸盤間隔開的接地回程支架;及介電板,該介電板設置在靜電吸盤和接地回程支架之間。
在一些實施例中,一種用於高壓電漿處理的處理腔室包括:腔室主體,該腔室主體具有內部空間在其中;及基板支撐件,該基板支撐件設置在內部空間中。該基板支撐件可以包括:靜電吸盤;與靜電吸盤間隔開的接地回程支架;及介電板,該介電板設置在靜電吸盤和接地回程支架之間。在一些實施例中,該處理腔室進一步包括一靶,該靶設置在與該基板支撐件相對的該內部空間中。在一些實施例中,該處理腔室進一步包括VHF RF源,該VHF RF源耦接到該處理腔室,以將該VHF頻帶中的RF功率提供給該處理腔室。
本揭示案的其他和進一步的實施例描述如下。
本文提供了用於高壓電漿處理的設備的實施例。在一些實施例中,該設備包括隔離板和接地支架,用於電漿處理腔室中的基板支撐件(如靜電吸盤)。在一些實施例中,電漿處理腔室可以是物理氣相沉積腔室。在一些實施例中,所揭露的隔離板和接地支架配置能夠在高達約480mTorr的壓力下實現高達約6或高達約9kW的電漿功率,同時使用VHF頻帶中(如在約30至約300MHz之間,或在一些實施例中,約100-200MHz)的RF功率提供電漿。與傳統的基板支撐件設計相比,所揭露的設備的實施例能夠在減少或沒有電弧和/或電漿洩漏的情況下實現穩定的電漿形成。在實施例中,隔離板和接地支架的設計藉由增加RF熱訊號到靜電吸盤和射頻回程之間的距離來有利地增加射頻路徑之間的電容,以減少和/或消除雜散電漿,同時在較高的腔室壓力與VHF功率下操作。所揭露的設備的一個合適應用的實例是用於在特徵中沉積鎢,這需要高壓電漿以用於良好的底部覆蓋和最小的通道懸垂(channel overhang)。發明人已經觀察到,當使用傳統的RF接地回程支架在所需壓力下施行此等製程時,會有電弧和不穩定電漿。
圖1繪示根據本揭示案的至少一些實施例的經配置用於高壓電漿處理的處理腔室100(如電漿處理腔室)的示意性側視圖。在一些實施例中,處理腔室100是物理氣相沉積腔室。然而,經配置用於不同製程的其他類型的處理腔室也可以與本案所述之實施例一起使用或是經修改而用於本案所述之實施例。
處理腔室100是真空腔室,該真空腔室適合於在基板處理期間將內部空間120內維持在次大氣壓(sub-atmospheric)的壓力。處理腔室100包括由蓋組件104覆蓋的腔室主體106,蓋組件104包圍位於內部空間120的上半部中的處理空間119。腔室主體106和蓋組件104可由金屬製成,如鋁。腔室主體106可經由與地115耦接的方式來接地。
基板支撐件124設置在內部空間120內,以支撐和固持基板122(如半導體晶圓)或其他可靜電固持的基板。基板支架124通常可包括設置在基座136上的靜電吸盤150以及用於支撐基座136和靜電吸盤150的中空支撐軸112。靜電吸盤150包括介電板,介電板具有設置在其中的一個或多個電極154。基座136一般由金屬(如不銹鋼)製成。基座136可以包括接地回程支架129,以用於針對供應給處理腔室的RF提供RF回程路徑。接地回程支架129有利地設置為遠離(away from)靜電吸盤150的背部,且遠離一個或多個電極154,這有利地最小化電弧。介電板128設置在接地回程支架129和靜電吸盤150之間以防止電漿在該區域中發光(light up)。介電板128將接地回程支架129自處理凹部和靜電吸盤150隔離。
在一些實施例中,介電板128可直接耦接到接地回程支架129和靜電吸盤150中的一者或兩者或者抵靠在接地回程支架129和靜電吸盤150中的一者或兩者設置。介電板128可以是單個部件或可以由多個部件製成,這些多個部件提供接地回程支架129和靜電吸盤150之間的介電間隙,如本文所揭露的。在一些實施例中,介電板128的外直徑大於靜電吸盤150的外直徑。
例如,在一些實施例中,選擇一個或多個電極154與接地回程支架129之間的距離以防止RF耦合,且一個或多個電極154與接地回程支架129之間的距離將取決於腔室中的條件(如RF功率、腔室壓力或類似條件)。對於給定的腔室壓力、偏壓功率等,在某些閾值距離的情況下,會有RF耦合。在一些實施例中,閾值距離係在若干mm的量級。在一些實施例中,介電板128可以在較大的量級(如至少10mm、至少20mm、或至少30mm、或在某些實施例中約為30mm)以將靜電吸盤150與接地回程支架129分隔開。介電板128的更大厚度(以及因此靜電吸盤150和接地回程支架129之間的分離)有利於增強電弧和/或雜散電漿保護,即使在比典型的 PVD 製程高得多的壓力/功率範圍下操作時(例如,在約350 mTorr或約480 mTorr,或更高,高達6或高達約9kW RF功率,以及在約30至約300MHz之間的RF頻率,或在一些實施例中,約100-200 MHz)。
中空支撐軸112提供導管,以向靜電吸盤150提供如背部氣體、處理氣體、流體、冷卻劑、電力等。在一些實施例中,中空支撐軸112耦接至升舉機構113(如致動器或馬達),升舉機構113提供在上部處理位置(如圖1所示)與下部移送位置(未圖示)之間靜電吸盤150的垂直運動。波紋管組件110設置在中空支撐軸112周圍,並耦接在靜電吸盤150和處理腔室100的底表面126之間,以提供彈性密封,該彈性密封允許靜電吸盤150垂直運動,同時防止處理腔室100內的真空損失。波紋管組件110亦包括與O形環165接觸的下部波紋管凸緣164或其他合適的密封元件,下部波紋管凸緣164或其他合適的密封元件接觸底表面126以幫助防止腔室真空損失。
中空支撐軸112提供用於將吸盤電源供應140和RF源(如RF電源供應174和RF偏壓電源供應117)耦接到靜電吸盤150的導管。在一些實施例中,RF電源供應174和RF偏壓電源供應117經由個別的RF匹配網路(僅圖示RF匹配網路116)耦接到靜電吸盤150。在一些實施例中,基板支撐件124可替代地包括AC或DC偏壓功率。
基板升降機(substrate lift)130可以包括安裝在平臺108上的升舉銷109,該平臺108連接到軸111,該軸111耦接到第二升舉機構132,第二升舉機構132用於升高和降低基板升降機130,使得可將基板122放置在靜電吸盤150上或從靜電吸盤150移除。平臺108可以是環形升降機的形式。靜電吸盤150可包括通孔以接收升舉銷109。波紋管組件131耦接在基板升降機130和底表面126之間,以提供彈性密封,該彈性密封在基板升降機130的垂直運動期間維持腔室真空。
在處理期間,(作為陰極的)靶138設置在處理空間119中,與基板支撐件124相對,以至少部分地界定其間的處理空間。靶138包括陰極表面,該陰極表面由靶138的面向處理空間的表面界定。基板支撐件124具有支撐表面,該支撐表面具有實質平行於靶138的濺射表面的一平面。靶138連接到DC電源190和/或RF電源供應174之一者或兩者。DC電源190可以相對於設置在腔室中並圍繞處理空間119的處理屏蔽件105向靶138施加偏壓電壓。
靶138通常包括安裝於背板144的濺射板142,儘管也可以使用單塊(monolithic)靶(如沒有背板的濺射板)。濺射板142包括待濺射到基板122上的材料。背板144由金屬製成,如不銹鋼、鋁、銅鉻或銅鋅。背板144可以由具有足夠高的熱導率以消散在靶138中產生的熱之材料製成,靶138中產生的熱由濺射板142和背板144中產生的渦流形成以及亦來自電漿產生的高能離子撞擊到濺射板142上。
在一些實施例中,處理腔室100包括磁場發生器156以使靶138周圍的磁場成形以改善靶138的濺射。可藉由磁場產生器156提升電容產生的電漿,在磁場產生器156中,例如複數個磁鐵151(如永久磁鐵或電磁線圈)可提供磁場於處理腔室100中,處理腔室100具有旋轉磁場,該旋轉磁場具有垂直於基板122平面的旋轉軸。處理腔室100可附加地或替代地包括磁場產生器156,磁場產生器156在靶138附近產生磁場以增加處理空間119中的離子密度以改善靶料的濺射。複數個磁鐵151可設置在蓋組件104的凹部153中。冷卻劑(如水)可設置在凹部153中或透過凹部153循環以冷卻靶138。
處理腔室100包括處理套組102,該處理套組102繞接(circumscribing)各種腔室部件以防止這些部件與離子化處理材料之間發生不必要的反應。處理套組102包括圍繞基板支撐件124和靶138的處理屏蔽件105,以至少部分地界定處理空間119。例如,處理屏蔽件105可界定處理空間119的外邊界。處理屏蔽件105包括陽極表面,該陽極表面由處理屏蔽件105的面向處理空間的表面界定。在一些實施例中,處理屏蔽件105由諸如鋁的金屬製成。處理屏蔽件105可以包括外凸緣,該外凸緣靜置在腔室主體106上以將處理屏蔽件支撐在適當位置。隔離環114可以設置在處理屏蔽件105和靶138之間的處理屏蔽件105的外凸緣頂部,以避免在靶138和處理屏蔽件105之間提供接地路徑。
在一些實施例中,處理套組102包括靜置在靜電吸盤150的外邊緣上的沉積環170。在一些實施例中,處理套組102包括設置在處理屏蔽件105上的蓋環180,以在其間形成迂曲的氣體流動路徑。在一些實施例中,在處理位置,蓋環180的徑向內部部分靜置在沉積環170上以減少或防止其間的電漿洩漏。
在一些實施例中,當基板支撐件124處於處理位置時,靶138與基板支撐件124之間的距離158為約60.0mm至約160.0mm,但也可使用其他間距。
在一些實施例中,複數個接地迴路172設置在處理屏蔽件105和基座136之間。例如,接地迴路172可以耦接到接地回程支架129。接地迴路172通常可包括導電材料(或者替代地,導電帶、彈簧構件或類似物)的迴路,其經配置當基板支撐件124處於處理位置,將處理屏蔽件105電耦接到基座136,例如,電耦接到接地回程支架129。在一些實施例中,複數個接地迴路172耦接到基座136的外唇部,例如沿著接地回程支架129的外邊緣,使得在處理位置,接地迴路172接觸處理屏蔽件105以電耦接處理屏蔽件105和基座136或接地回程支架129。在一些實施例中,在移送位置中,接地迴路172與處理屏蔽件105分隔開。
處理腔室100耦接至真空系統184並與真空系統184流體連通,該真空系統184包括用於為處理腔室100排氣的閘閥或節流閥(未圖示)和真空泵(未圖示)。可藉由調整節流閥和/或真空泵來調節處理腔室100內部的壓力。處理腔室100亦耦接到氣體供應118並與處理氣體供應118流體連通,氣體供應118可向處理腔室100供應一個或多個處理氣體,以用於處理設置在其中的基板122。狹縫閥148可耦接到腔室主體106並與腔室主體106的側壁中的開口對準,以利於將基板122移送進出腔室主體106。
在使用中,DC電源190向靶138和連接到DC電源190的其他腔室部件供電,並與RF電源供應174結合,為濺射氣體提供能量(例如,來自處理氣體供應118)以形成濺射氣體的電漿。形成的電漿碰撞到靶138的濺射表面上且撞擊靶138的濺射表面,以將材料自靶138濺射掉而濺射於基板122上。在一些實施例中,由RF電源供應174所提供的RF能量可在VHF頻帶中的頻率範圍內(如約30到約300MHz)。在一些實施例中,可提供複數個RF電源(即,兩個或更多個)以提供複數個頻率(包括VHF頻帶之外的頻率)的RF能量。額外的RF電源(如RF偏壓電源供應117)也可以用於向基板支撐件124提供偏壓電壓以吸引離子形成電漿往基板122。
圖2繪示根據本揭示案的至少一些實施例的經配置用於高壓電漿處理的處理腔室200(如電漿處理腔室)的示意性側視圖。處理腔室200類似於圖1中描述的處理腔室100,除了如下所述之外。
處理腔室200亦包括基板支撐件124,基板支撐件124設置在內部空間120內,以支撐和固持基板122(如半導體晶圓)或其他可靜電固持的基板。基板支架124亦可以包括設置在基座136上的靜電吸盤150以及用於支撐基座136和靜電吸盤150的中空支撐軸112。靜電吸盤150包括介電板,介電板具有設置在其中的一個或多個電極。基座136可以包括接地回程支架129或者可以耦接到接地回程支架129,以用於針對供應給處理腔室的RF提供RF回程路徑。接地回程支架129有利地設置為遠離靜電吸盤150的背部,這有利地最小化電弧。
在一些實施例中,接地回程支架129通常是碗形的,其具有凹陷的中心部分202和徑向延伸的外凸緣204。在一些實施例中,徑向延伸的外凸緣為實質平坦的,如水平的。凹陷的中央部分進一步可以包括中心開口206,中空支撐軸112和波紋管組件110可以延伸穿過該中心開口206。
基座136的殼體208至少部分地包圍設置在靜電吸盤150下方的內部空間210,以用於設置或佈置基板支撐件124的其他部件。殼體包括基部212和側壁214,基部212具有耦接到中空支撐軸112的中心開口,側壁214從基部212延伸到靜電吸盤150的背部。接地回程支架129可以與殼體208介接(interface)或耦接,例如,在基部212的周邊周圍。波紋管組件110可以耦接到中空支撐軸112周圍的基部212的底部。
接地迴路172可設置在接地回程支架129上或耦接到接地回程支架129,例如在徑向延伸的外凸緣204上。例如,接地迴路172可以藉由板216和螺栓218沿徑向延伸的外凸緣204的外周邊栓接或以其他方式緊固。例如,在一些實施例中,介電板128的外直徑大於靜電吸盤150的外直徑,接地回程支架129(如徑向延伸的外凸緣204)徑向延伸超過介電板128的外直徑,以及接地迴路192設置在自介電板128的徑向向外設置的接地回程支架129(如徑向延伸的外凸緣204)或耦接到接地回程支架129。
介電板128設置在接地回程支架129和靜電吸盤150之間以防止電漿在該區域中發光。介電板128將接地回程支架129自處理凹部和靜電吸盤150隔離。在一些實施例中,介電板128是環形的或者包括中心開口,該中心開口的尺寸經調整貼合圍繞(fit around)基座136的殼體208(如殼體208的側壁214)。複數個通孔220可以在與中心開口相同的方向上(如垂直地)穿過介電板提供,以接收緊固件222(如螺栓),以透過接地回程支架129中的相應開口將介電板128固定於接地回程支架129。
對準的開口224、226、228可以分別穿過介電板128、接地回程支架129和靜電吸盤150形成,以利於升舉銷通過其中的移動,以相對於靜電吸盤150的支撐表面升高或降低基板(如上所述)。
雖然前面所述係針對本揭示案的實施例,但在不背離本揭示案基本範圍下,可設計本揭示案揭露的其他與進一步的實施例。
100:處理腔室
102:處理套組
104:蓋組件
105:處理屏蔽件
106:腔室主體
108:平臺
109:升舉銷
110:波紋管組件
111:軸
112:中空支撐軸
113:升舉機構
114:隔離環
115:地
116:RF匹配網路
117:RF偏壓電源供應
118:處理氣體供應
119:處理空間
120:內部空間
122:基板
124:基板支撐件
126:底表面
128:介電板
129:接地回程支架
130:基板升降機
132:第二升舉機構
136:基座
138:靶
140:吸盤電源供應
142:濺射板
144:背板
148:狹縫閥
150:靜電吸盤
151:複數個磁鐵
153:凹部
154:電極
156:磁場產生器
158:距離
164:下部波紋管凸緣
165:O形環
170:沉積環
172:接地迴路
174:RF電源供應
180:蓋環
184:真空系統
190:DC電源供應
200:處理腔室
202:凹陷的中心部分
204:徑向延伸的外凸緣
206:中心開口
208:殼體
210:內部空間
212:基部
214:側壁
216:板
218:螺栓
220:通孔
222:緊固件
224:對準的開口
226:對準的開口
228:對準的開口
本揭示案之實施例已簡要概述於前,並在以下有更詳盡之討論,可以藉由參考所附圖式中繪示之本揭示案的示例性實施例以作瞭解。然而,所附圖式僅繪示了本揭示案的典型實施例,而由於本揭示案可允許其他等效之實施例,因此所附圖式並不會視為本揭示範圍之限制。
圖1繪示根據本揭示案的至少一些實施例的經配置用於改良的高壓電漿處理的處理腔室的示意性側視圖。
圖2繪示根據本揭示案的至少一些實施例的經配置用於改良的高壓電漿處理的處理腔室的示意性側視圖。
為便於理解,在可能的情況下,使用相同的數字編號代表圖示中相同的元件。為求清楚,圖式未依比例繪示且可能被簡化。一個實施例的元件和特徵可以有益地結合在其他實施例中而無需進一步敘述。
國內寄存資訊(請依寄存機構、日期、號碼順序註記)
無
國外寄存資訊(請依寄存國家、機構、日期、號碼順序註記)
無
100:處理腔室
102:處理套組
104:蓋組件
105:處理屏蔽件
106:腔室主體
108:平臺
109:升舉銷
110:波紋管組件
111:軸
112:中空支撐軸
113:升舉機構
114:隔離環
115:地
116:RF匹配網路
117:RF偏壓電源供應
118:處理氣體供應
119:處理空間
120:內部空間
122:基板
124:基板支撐件
126:底表面
128:介電板
129:接地回程支架
130:基板升降機
132:第二升舉機構
136:基座
138:靶
140:吸盤電源供應
142:濺射板
144:背板
148:狹縫閥
150:靜電吸盤
151:複數個磁鐵
153:凹部
154:電極
156:磁場產生器
158:距離
164:下部波紋管凸緣
165:O形環
170:沉積環
172:接地迴路
174:RF電源供應
180:蓋環
184:真空系統
190:DC電源供應
Claims (20)
- 一種用於高壓電漿處理的設備,包括: 一靜電吸盤; 一接地回程支架,該接地回程支架與該靜電吸盤間隔開;及 一介電板,該介電板設置在該靜電吸盤和該接地回程支架之間。
- 如請求項1所述之設備,其中該介電板將該靜電吸盤與該接地回程支架分開至少10mm。
- 如請求項1所述之設備,進一步包括: 一殼體,該殼體至少部分地包圍設置在該靜電吸盤正下方的一內部空間。
- 如請求項3所述之設備,其中該殼體進一步包括: 一基部;及 側壁,該等側壁從該基部延伸到該靜電吸盤的一背部。
- 如請求項4所述之設備,進一步包括: 一中空支撐軸,其中該基部包括一中心開口,該中心開口耦接到該中空支撐軸,使得該中空支撐軸的一內部耦接到該內部空間。
- 如請求項3所述之設備,其中該介電板是環形的或者包括一中心開口,該中心開口的尺寸經調整貼合圍繞(fit around)該殼體。
- 如請求項3所述之設備,其中該接地回程支架耦接到該殼體。
- 如請求項1至7中任一項所述之設備,其中該接地回程支架通常為碗形,其具有一凹陷的中心部分和一徑向延伸的外凸緣。
- 如請求項8所述之設備,其中該徑向延伸的外凸緣是實質平坦的,且其中該凹陷的中心部分包括一中心開口,支撐該靜電吸盤的一中空支撐軸可以延伸穿過該中心開口。
- 如請求項1至7中任一項所述之設備,進一步包括複數個接地迴路,該複數個接地迴路耦接到該接地回程支架。
- 如請求項10所述之設備,其中該介電板的一外直徑大於該靜電吸盤的該外直徑,該接地回程支架徑向延伸超過該介電板的該外直徑,且該複數個接地迴路耦接到該接地回程支架,該接地回程支架係自該介電板的徑向向外。
- 如請求項1至7中任一項所述之設備,進一步包括複數個通孔,該複數個通孔穿過該介電板,以接收一緊固件以透過該接地回程支架中的複數個對應開口將該介電板固定到該接地回程支架。
- 如請求項1至7中任一項所述之設備,進一步包括對準的開口,該等對準的開口穿過該介電板、該接地回程支架和該靜電吸盤設置,以利於升舉銷通過其中的移動,以相對於該靜電吸盤的一支撐表面升高或降低一基板。
- 如請求項1或2中任一項所述之設備,進一步包括: 一殼體,該殼體至少部分地包圍設置在該靜電吸盤正下方的一內部空間,其中該殼體進一步包含一基部與側壁,該基部具有一中心開口,該等側壁從該基部延伸到該靜電吸盤的一背部,其中該介電板是環形的或者包含一中心開口,該中心開口的尺寸經調整以貼合圍繞該殼體; 一中空支撐軸,該中空支撐軸耦接到該中心開口周圍的該基部,使得該中空支撐軸的一內部耦接到該內部空間,其中該接地回程支架耦接到該殼體且通常為碗形,其具有一凹陷的中心部分和一徑向延伸的外凸緣,該凹陷的中心部分具有一中心開口,該中空支撐軸延伸穿過該中心開口;及 複數個接地迴路,該複數個接地迴路耦接到該接地回程支架的該徑向延伸的外凸緣。
- 一種用於高壓電漿處理的設備,包括: 一靜電吸盤; 一接地回程支架,該接地回程支架與該靜電吸盤間隔開; 一介電板,該介電板具有一中心開口,該中心開口設置在該靜電吸盤和該接地回程支架之間,其中該介電板將該靜電吸盤與該接地回程支架分隔開至少10mm; 一殼體,該殼體至少部分地包圍設置在該靜電吸盤正下方的一內部空間,該殼體包含一基部和側壁,該基部具有一中心開口,該等側壁從該基部延伸到該介電板的該中心開口內的該靜電吸盤的一背部; 一中空支撐軸,該中空支撐軸耦接到該中心開口周圍的該基部,使得該中空支撐軸的一內部耦接到該內部空間,其中該接地回程支架耦接到該殼體且通常為碗形,其具有一凹陷的中心部分和一徑向延伸的外凸緣,該凹陷的中心部分具有一中心開口,該中空支撐軸延伸穿過該中心開口; 對準的開口,該等對準的開口穿過該介電板、該接地回程支架和該靜電吸盤設置,以利於升舉銷通過其中的移動,以相對於該靜電吸盤的一支撐表面升高或降低一基板;及 複數個接地迴路,該複數個接地迴路耦接到該接地回程支架的該徑向延伸的外凸緣。
- 一種用於高壓電漿處理的處理腔室,包括: 一腔室主體,該腔室主體具有一內部空間在其中;及 如請求項1至7中任一項所述之基板支撐件,該基板支撐件設置在該內部空間中。
- 如請求項16所述之處理腔室,進一步包括: 一靶,該靶設置在與該基板支撐件相對的該內部空間中。
- 如請求項16所述之處理腔室,進一步包括: 一VHF RF源,該VHF RF源耦接到該處理腔室,以將該VHF頻帶中的RF功率提供給該處理腔室。
- 如請求項16至18中任一項所述之處理腔室,進一步包括複數個接地迴路,該複數個接地迴路耦接到該接地回程支架。
- 如請求項19所述之處理腔室,其中該介電板的一外直徑大於該靜電吸盤的該外直徑,該接地回程支架徑向延伸超過該介電板的該外直徑,且該複數個接地迴路耦接到該接地回程支架,該接地回程支架係自該介電板的徑向向外。
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US17/737,536 US20220359171A1 (en) | 2021-05-07 | 2022-05-05 | Apparatus for improved high pressure plasma processing |
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US9171702B2 (en) * | 2010-06-30 | 2015-10-27 | Lam Research Corporation | Consumable isolation ring for movable substrate support assembly of a plasma processing chamber |
KR102330092B1 (ko) * | 2015-03-20 | 2021-11-24 | 주성엔지니어링(주) | 플라즈마 발생 장치 |
US11434569B2 (en) * | 2018-05-25 | 2022-09-06 | Applied Materials, Inc. | Ground path systems for providing a shorter and symmetrical ground path |
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US20220359171A1 (en) | 2022-11-10 |
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