CN117581327A - 用于改良的高压等离子体处理的设备 - Google Patents

用于改良的高压等离子体处理的设备 Download PDF

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CN117581327A
CN117581327A CN202280044425.5A CN202280044425A CN117581327A CN 117581327 A CN117581327 A CN 117581327A CN 202280044425 A CN202280044425 A CN 202280044425A CN 117581327 A CN117581327 A CN 117581327A
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electrostatic chuck
dielectric plate
coupled
ground return
return bracket
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威廉·R·约翰逊
科里·尤金·拉福利特
克兰库玛尔·纽拉桑德拉·萨凡迪亚
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Applied Materials Inc
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Abstract

本文提供了用于高压等离子体处理的设备的实施例。在一些实施例中，该设备包括隔离板和接地支架，用于等离子体处理腔室中的基板支撑件(如静电吸盘)。在一些实施例中，一种用于高压等离子体处理的设备包括：静电吸盘；与静电吸盘间隔开的接地回程支架；及介电板，该介电板设置在静电吸盘和接地回程支架之间。

Description

用于改良的高压等离子体处理的设备
技术领域
本公开内容的实施例一般涉及基板处理设备。
背景技术
等离子体处理腔室通常包括用于支撑基板的基板支撑件和与基板支撑件相对设置的靶。靶提供了在处理期间用于溅射到基板上的材料源。RF功率被提供给等离子体处理腔室以在靶和基板支撑件之间设置的处理空间中产生等离子体。一些等离子体工艺需要高压以在基板上实现所需的膜沉积性质和位置(如，为了在基板上设置的特征中获得良好的底部覆盖)。然而，发明人已经观察到在这种高压等离子体工艺期间会发生电弧放电和等离子体泄漏。
因此，发明人提供了用于高压等离子体处理的改良设备。
发明内容
本文提供了用于高压等离子体处理的设备的实施例。在一些实施例中，该设备包括隔离板和接地支架，用于等离子体处理腔室中的基板支撑件(如静电吸盘)。在一些实施例中，等离子体处理腔室可以是物理气相沉积腔室。在一些实施例中，所公开的隔离板和接地支架构造能够在高达约480mTorr的压力下实现高达约6kW的等离子体功率，同时使用极高频(VHF)频带中的RF功率提供等离子体。与传统的基板支撑件设计相比，所公开的设备的实施例能够在减少或没有电弧和/或等离子体泄漏的情况下实现稳定的等离子体形成。
在一些实施例中，一种用于高压等离子体处理的设备包括：静电吸盘；与静电吸盘间隔开的接地回程支架；及介电板，该介电板设置在静电吸盘和接地回程支架之间。
在一些实施例中，一种用于高压等离子体处理的处理腔室包括：腔室主体，该腔室主体具有在其中的内部空间；及基板支撑件，该基板支撑件设置在内部空间中。该基板支撑件可以包括：静电吸盘；与静电吸盘间隔开的接地回程支架；及介电板，该介电板设置在静电吸盘和接地回程支架之间。在一些实施例中，该处理腔室进一步包括一靶，该靶设置在与该基板支撑件相对的该内部空间中。在一些实施例中，该处理腔室进一步包括VHF RF源，该VHF RF源耦接到该处理腔室，以将该VHF频带中的RF功率提供给该处理腔室。
本公开内容的其他和进一步的实施例描述如下。
附图说明
本公开内容之实施例已简要概述于前，并在以下有更详尽之讨论，可以借由参考所附图式中绘示之本公开内容的示例性实施例以作了解。然而，所附图式仅绘示了本公开内容的典型实施例，而由于本公开内容可允许其他等效之实施例，因此所附图式并不会视为本公开范围之限制。
图1绘示根据本公开内容的至少一些实施例的被构造用于改良的高压等离子体处理的处理腔室的示意性侧视图。
图2绘示根据本公开内容的至少一些实施例的被构造用于改良的高压等离子体处理的处理腔室的示意性侧视图。
为便于理解，在可能的情况下，使用相同的附图标记代表图标中相同的组件。为求清楚，图式未依比例绘示且可能被简化。一个实施例的组件和特征可以有益地结合在其他实施例中而无需进一步叙述。
具体实施方式
本文提供了用于高压等离子体处理的设备的实施例。在一些实施例中，该设备包括隔离板和接地支架，用于等离子体处理腔室中的基板支撑件(如静电吸盘)。在一些实施例中，等离子体处理腔室可以是物理气相沉积腔室。在一些实施例中，所公开的隔离板和接地支架构造能够在高达约480mTorr的压力下实现高达约6或高达约9kW的等离子体功率，同时使用VHF频带中(如在约30至约300MHz之间，或在一些实施例中，约100-200MHz)的RF功率提供等离子体。与传统的基板支撑件设计相比，所公开的设备的实施例能够在减少或没有电弧和/或等离子体泄漏的情况下实现稳定的等离子体形成。在实施例中，隔离板和接地支架的设计借由增加RF热信号到静电吸盘和射频回程之间的距离来有利地增加射频路径之间的电容，以减少和/或消除杂散等离子体，同时在较高的腔室压力与VHF功率下操作。所公开的设备的一个合适应用的实例是用于在特征中沉积钨，这需要高压等离子体以用于良好的底部覆盖和最小的通道凸起(channel overhang)。发明人已经观察到，当使用传统的RF接地回程支架在所需压力下施行这些工艺时，会有电弧和不稳定等离子体。
图1绘示根据本公开内容的至少一些实施例的被构造用于高压等离子体处理的处理腔室100(如等离子体处理腔室)的示意性侧视图。在一些实施例中，处理腔室100是物理气相沉积腔室。然而，被构造用于不同工艺的其他类型的处理腔室也可以与本案所述之实施例一起使用或是经修改而用于本案所述之实施例。
处理腔室100是真空腔室，该真空腔室适合于在基板处理期间将内部空间120内维持在次大气压(sub-atmospheric)的压力。处理腔室100包括由盖组件104覆盖的腔室主体106，盖组件104包围位于内部空间120的上半部中的处理空间119。腔室主体106和盖组件104可由金属制成，如铝。腔室主体106可经由与地115耦接的方式来接地。
基板支撑件124设置在内部空间120内，以支撑和固持基板122(如半导体晶片)或其他可静电固持的基板。基板支撑件124通常可包括设置在基座136上的静电吸盘150以及用于支撑基座136和静电吸盘150的中空支撑轴112。静电吸盘150包括介电板，介电板具有设置在其中的一个或多个电极154。基座136一般由金属(如不锈钢)制成。基座136可以包括接地回程支架129，以用于针对供应给处理腔室的RF提供RF回程路径。接地回程支架129有利地设置为远离(away from)静电吸盘150的背部，且远离一个或多个电极154，这有利地最小化电弧。介电板128设置在接地回程支架129和静电吸盘150之间以防止等离子体在该区域中发光(light up)。介电板128将接地回程支架129自处理凹部和静电吸盘150隔离。
在一些实施例中，介电板128可直接耦接到接地回程支架129和静电吸盘150中的一者或两者或者抵靠在接地回程支架129和静电吸盘150中的一者或两者设置。介电板128可以是单个部件或可以由多个部件制成，这些多个部件提供接地回程支架129和静电吸盘150之间的介电间隙，如本文所公开的。在一些实施例中，介电板128的外直径大于静电吸盘150的外直径。
例如，在一些实施例中，选择一个或多个电极154与接地回程支架129之间的距离以防止RF耦合，且一个或多个电极154与接地回程支架129之间的距离将取决于腔室中的条件(如RF功率、腔室压力或类似条件)。对于给定的腔室压力、偏压功率等，在某些阈值距离的情况下，会有RF耦合。在一些实施例中，阈值距离是在若干mm的量级。在一些实施例中，介电板128可以在较大的量级(如至少10mm、至少20mm、或至少30mm、或在某些实施例中约为30mm)以将静电吸盘150与接地回程支架129分隔开。介电板128的更大厚度(以及因此静电吸盘150和接地回程支架129之间的分离)有利于增强电弧和/或杂散等离子体保护，即使在比典型的PVD工艺高得多的压力/功率范围下操作时(例如，在约350mTorr或约480mTorr，或更高，高达6或高达约9kW RF功率，以及在约30至约300MHz之间的RF频率，或在一些实施例中，约100-200MHz)。
中空支撑轴112提供导管，以向静电吸盘150提供如背部气体、处理气体、流体、冷却剂、电力等。在一些实施例中，中空支撑轴112耦接至升降机构113(如致动器或电机)，升降机构113提供在上部处理位置(如图1所示)与下部移送位置(未图标)之间静电吸盘150的垂直运动。波纹管组件110设置在中空支撑轴112周围，并耦接在静电吸盘150和处理腔室100的底表面126之间，以提供弹性密封，该弹性密封允许静电吸盘150垂直运动，同时防止处理腔室100内的真空损失。波纹管组件110亦包括与O形环165接触的下部波纹管凸缘164或其他合适的密封组件，下部波纹管凸缘164或其他合适的密封组件接触底表面126以帮助防止腔室真空损失。
中空支撑轴112提供用于将吸盘功率供应器140和RF源(如RF功率供应器174和RF偏压功率供应器117)耦接到静电吸盘150的导管。在一些实施例中，RF功率供应器174和RF偏压功率供应器117经由个别的RF匹配网络(仅图标RF匹配网络116)耦接到静电吸盘150。在一些实施例中，基板支撑件124可替代地包括AC或DC偏压功率。
基板升降机(substrate lift)130可以包括安装在平台108上的升降杆109，该平台108连接到轴111，该轴111耦接到第二升降机构132，第二升降机构132用于升高和降低基板升降机130，使得可将基板122放置在静电吸盘150上或从静电吸盘150移除。平台108可以是环形升降机的形式。静电吸盘150可包括通孔以接收升降杆109。波纹管组件131耦接在基板升降机130和底表面126之间，以提供弹性密封，该弹性密封在基板升降机130的垂直运动期间维持腔室真空。
(在处理期间作为阴极的)靶138设置在处理空间119中，与基板支撑件124相对，以至少部分地界定其间的处理空间。靶138包括阴极表面，该阴极表面由靶138的面向处理空间的表面界定。基板支撑件124具有支撑表面，该支撑表面具有实质平行于靶138的溅射表面的平面。靶138连接到DC功率源190和/或RF功率供应器174之一者或两者。DC功率源190可以相对于设置在腔室中并围绕处理空间119的处理屏蔽件105向靶138施加偏压电压。
靶138通常包括安装于背板144的溅射板142，尽管也可以使用单块(monolithic)靶(如没有背板的溅射板)。溅射板142包括待溅射到基板122上的材料。背板144由金属制成，如不锈钢、铝、铜铬或铜锌。背板144可以由具有足够高的导热率以消散在靶138中产生的热之材料制成，靶138中产生的热由溅射板142和背板144中产生的涡流形成以及亦来自等离子体产生的高能离子撞击到溅射板142上。
在一些实施例中，处理腔室100包括磁场发生器156以使靶138周围的磁场成形以改善靶138的溅射。可借由磁场产生器156提升电容产生的等离子体，在磁场产生器156中，例如多个磁体151(如永久磁体或电磁线圈)可于处理腔室100中提供磁场，处理腔室100具有旋转磁场，该旋转磁场具有垂直于基板122平面的旋转轴。处理腔室100可附加地或替代地包括磁场产生器156，磁场产生器156在靶138附近产生磁场以增加处理空间119中的离子密度以改善靶料的溅射。多个磁体151可设置在盖组件104的凹部153中。冷却剂(如水)可设置在凹部153中或通过凹部153循环以冷却靶138。
处理腔室100包括处理套组102，该处理套组102绕接(circumscribing)各种腔室部件以防止这些部件与离子化处理材料之间发生不必要的反应。处理套组102包括围绕基板支撑件124和靶138的处理屏蔽件105，以至少部分地界定处理空间119。例如，处理屏蔽件105可界定处理空间119的外边界。处理屏蔽件105包括阳极表面，该阳极表面由处理屏蔽件105的面向处理空间的表面界定。在一些实施例中，处理屏蔽件105由诸如铝的金属制成。处理屏蔽件105可以包括外凸缘，该外凸缘置于腔室主体106上以将处理屏蔽件支撑在适当位置。隔离环114可以设置在处理屏蔽件105和靶138之间的处理屏蔽件105的外凸缘顶部，以避免在靶138和处理屏蔽件105之间提供接地路径。
在一些实施例中，处理套组102包括置于静电吸盘150的外边缘上的沉积环170。在一些实施例中，处理套组102包括设置在处理屏蔽件105上的盖环180，以在其间形成迂曲的气体流动路径。在一些实施例中，在处理位置，盖环180的径向内部部分置于沉积环170上以减少或防止其间的等离子体泄漏。
在一些实施例中，当基板支撑件124处于处理位置时，靶138与基板支撑件124之间的距离158为约60.0mm至约160.0mm，但也可使用其他间距。
在一些实施例中，多个接地回路172设置在处理屏蔽件105和基座136之间。例如，接地回路172可以耦接到接地回程支架129。接地回路172通常可包括导电材料(或者替代地，导电带、弹簧构件或类似物)的回路，其被构造当基板支撑件124处于处理位置，将处理屏蔽件105电耦接到基座136，例如，电耦接到接地回程支架129。在一些实施例中，多个接地回路172耦接到基座136的外唇部，例如沿着接地回程支架129的外边缘，使得在处理位置，接地回路172接触处理屏蔽件105以电耦接处理屏蔽件105和基座136或接地回程支架129。在一些实施例中，在移送位置中，接地回路172与处理屏蔽件105分隔开。
处理腔室100耦接至真空系统184并与真空系统184流体连通，该真空系统184包括用于为处理腔室100排气的栅阀或节流阀(未图示)和真空泵(未图示)。可借由调整节流阀和/或真空泵来调节处理腔室100内部的压力。处理腔室100亦耦接到气体供应118并与处理气体供应118流体连通，气体供应118可向处理腔室100供应一个或多个处理气体，以用于处理设置在其中的基板122。狭缝阀148可耦接到腔室主体106并与腔室主体106的侧壁中的开口对准，以利于将基板122移送进出腔室主体106。
在使用中，DC功率源190向靶138和连接到DC功率源190的其他腔室部件提供功率，并与RF功率供应器174结合，为溅射气体(例如，来自处理气体供应118)提供能量以形成溅射气体的等离子体。形成的等离子体碰撞到靶138的溅射表面上且撞击靶138的溅射表面，以将材料自靶138溅射掉而溅射于基板122上。在一些实施例中，由RF功率供应器174所提供的RF能量可在VHF频带中的频率范围内(如约30到约300MHz)。在一些实施例中，可提供多个RF功率源(即，两个或更多个)以提供多个频率(包括VHF频带之外的频率)的RF能量。额外的RF功率源(如RF偏压功率供应器117)也可以用于向基板支撑件124提供偏压电压以吸引离子形成等离子体朝向基板122。
图2绘示根据本公开内容的至少一些实施例的被构造用于高压等离子体处理的处理腔室200(如等离子体处理腔室)的示意性侧视图。处理腔室200类似于图1中描述的处理腔室100，除了如下所述之外。
处理腔室200亦包括基板支撑件124，基板支撑件124设置在内部空间120内，以支撑和固持基板122(如半导体晶片)或其他可静电固持的基板。基板支撑件124亦可以包括设置在基座136上的静电吸盘150以及用于支撑基座136和静电吸盘150的中空支撑轴112。静电吸盘150包括介电板，介电板具有设置在其中的一个或多个电极。基座136可以包括接地回程支架129或者可以耦接到接地回程支架129，以用于针对供应给处理腔室的RF提供RF回程路径。接地回程支架129有利地设置为远离静电吸盘150的背部，这有利地最小化电弧。
在一些实施例中，接地回程支架129通常是碗形的，其具有凹陷的中心部分202和径向延伸的外凸缘204。在一些实施例中，径向延伸的外凸缘为实质平坦的，如水平的。凹陷的中央部分进一步可以包括中心开口206，中空支撑轴112和波纹管组件110可以延伸穿过该中心开口206。
基座136的壳体208至少部分地包围设置在静电吸盘150下方的内部空间210，以用于设置或布置基板支撑件124的其他部件。壳体包括基部212和侧壁214，基部212具有耦接到中空支撑轴112的中心开口，侧壁214从基部212延伸到静电吸盘150的背部。接地回程支架129可以与壳体208介接(interface)或耦接，例如，在基部212的周边周围。波纹管组件110可以耦接到中空支撑轴112周围的基部212的底部。
接地回路172可设置在接地回程支架129上或耦接到接地回程支架129，例如在径向延伸的外凸缘204上。例如，接地回路172可以借由板216和螺栓218沿径向延伸的外凸缘204的外周边栓接或以其他方式紧固。例如，在一些实施例中，介电板128的外直径大于静电吸盘150的外直径，接地回程支架129(如径向延伸的外凸缘204)径向延伸超过介电板128的外直径，以及接地回路172设置在自介电板128的径向向外设置的接地回程支架129(如径向延伸的外凸缘204)上或耦接到接地回程支架129。
介电板128设置在接地回程支架129和静电吸盘150之间以防止等离子体在该区域中发光。介电板128将接地回程支架129自处理凹部和静电吸盘150隔离。在一些实施例中，介电板128是环形的或者包括中心开口，该中心开口的尺寸经调整贴合围绕(fit around)基座136的壳体208(如壳体208的侧壁214)。多个通孔220可以在与中心开口相同的方向上(如垂直地)穿过介电板提供，以接收紧固件222(如螺栓)，以通过接地回程支架129中的相应开口将介电板128固定于接地回程支架129。
对准的开口224、226、228可以分别穿过介电板128、接地回程支架129和静电吸盘150形成，以利于升降杆通过其中的移动，以相对于静电吸盘150的支撑表面升高或降低基板(例如，如上所述)。
虽然前面所述针对本公开内容的实施例，但在不背离本公开内容基本范围下，可设计本公开内容公开的其他与进一步的实施例。

Claims (20)

1.一种用于高压等离子体处理的设备，包括：
静电吸盘；
接地回程支架，所述接地回程支架与所述静电吸盘间隔开；及
介电板，所述介电板设置在所述静电吸盘和所述接地回程支架之间。
2.如权利要求1所述的设备，其中所述介电板将所述静电吸盘与所述接地回程支架分开至少10mm。
3.如权利要求1所述的设备，进一步包括：
壳体，所述壳体至少部分地包围设置在所述静电吸盘正下方的内部空间。
4.如权利要求3所述的设备，其中所述壳体进一步包括：
基部；及
侧壁，所述侧壁从所述基部延伸到所述静电吸盘的背部。
5.如权利要求4所述的设备，进一步包括：
中空支撑轴，其中所述基部包括中心开口，所述中心开口耦接到所述中空支撑轴，使得所述中空支撑轴的内部耦接到所述内部空间。
6.如权利要求3所述的设备，其中所述介电板是环形的或者包括中心开口，所述中心开口的尺寸经调整贴合围绕(fit around)所述壳体。
7.如权利要求3所述的设备，其中所述接地回程支架耦接到所述壳体。
8.如权利要求1至7中任一项所述的设备，其中所述接地回程支架通常为具有凹陷的中心部分和径向延伸的外凸缘的碗形。
9.如权利要求8所述的设备，其中所述径向延伸的外凸缘是实质平坦的，且其中所述凹陷的中心部分包括中心开口，支撑所述静电吸盘的中空支撑轴可以延伸穿过所述中心开口。
10.如权利要求1至7中任一项所述的设备，进一步包括多个接地回路，所述多个接地回路耦接到所述接地回程支架。
11.如权利要求10所述的设备，其中所述介电板的外直径大于所述静电吸盘的所述外直径，所述接地回程支架径向延伸超过所述介电板的所述外直径，且所述多个接地回路耦接到所述接地回程支架，所述接地回程支架自所述介电板的径向向外。
12.如权利要求1至7中任一项所述的设备，进一步包括多个通孔，所述多个通孔穿过所述介电板，以接收紧固件以通过所述接地回程支架中的多个对应开口将所述介电板固定到所述接地回程支架。
13.如权利要求1至7中任一项所述的设备，进一步包括对准的开口，所述对准的开口穿过所述介电板、所述接地回程支架和所述静电吸盘设置，以利于升降杆通过所述对准的开口的移动，以相对于所述静电吸盘的支撑表面升高或降低基板。
14.如权利要求1或2中任一项所述的设备，进一步包括：
壳体，所述壳体至少部分地包围设置在所述静电吸盘正下方的内部空间，其中所述壳体进一步包含基部与侧壁，所述基部具有中心开口，所述侧壁从所述基部延伸到所述静电吸盘的背部，其中所述介电板是环形的或者包含中心开口，所述中心开口的尺寸经调整以贴合围绕所述壳体；
中空支撑轴，所述中空支撑轴耦接到所述中心开口周围的所述基部，使得所述中空支撑轴的内部耦接到所述内部空间，其中所述接地回程支架耦接到所述壳体且通常为具有凹陷的中心部分和径向延伸的外凸缘的碗形，所述凹陷的中心部分具有中心开口，所述中空支撑轴延伸穿过所述中心开口；及
多个接地回路，所述多个接地回路耦接到所述接地回程支架的所述径向延伸的外凸缘。
15.如权利要求2所述的设备，进一步包括：
壳体，所述壳体至少部分地包围设置在所述静电吸盘正下方的内部空间，所述壳体包含基部和侧壁，所述基部具有中心开口，所述侧壁在所述介电板的所述中心开口内从所述基部延伸到所述静电吸盘的背部，其中所述介电板是环形的或者包含中心开口，所述中心开口的尺寸经调整以贴合围绕所述壳体；
中空支撑轴，所述中空支撑轴耦接到所述中心开口周围的所述基部，使得所述中空支撑轴的内部耦接到所述内部空间，其中所述接地回程支架耦接到所述壳体且通常为具有凹陷的中心部分和径向延伸的外凸缘的碗形，所述凹陷的中心部分具有中心开口，所述中空支撑轴延伸穿过所述中心开口；
对准的开口，所述对准的开口穿过所述介电板、所述接地回程支架和所述静电吸盘设置，以利于升降杆通过所述对准的开口的移动，以相对于所述静电吸盘的支撑表面升高或降低基板；及
多个接地回路，所述多个接地回路耦接到所述接地回程支架的所述径向延伸的外凸缘。
16.一种用于高压等离子体处理的处理腔室，包括：
腔室主体，所述腔室主体在其中具有内部空间；及
如权利要求1至7中任一项所述的基板支撑件，所述基板支撑件设置在所述内部空间中。
17.如权利要求16所述的处理腔室，进一步包括：
靶，所述靶设置在与所述基板支撑件相对的所述内部空间中。
18.如权利要求16所述的处理腔室，进一步包括：
VHF RF源，所述VHF RF源耦接到所述处理腔室，以将所述VHF频带中的RF功率提供给所述处理腔室。
19.如权利要求16至18中任一项所述的处理腔室，进一步包括多个接地回路，所述多个接地回路耦接到所述接地回程支架。
20.如权利要求19所述的处理腔室，其中所述介电板的外直径大于所述静电吸盘的所述外直径，所述接地回程支架径向延伸超过所述介电板的所述外直径，且所述多个接地回路耦接到所述接地回程支架，所述接地回程支架自所述介电板的径向向外。
CN202280044425.5A 2021-05-07 2022-05-05 用于改良的高压等离子体处理的设备 Pending CN117581327A (zh)

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