TW202309662A - Photosensitive composition, photosensitive composition layer, transfer film, method for producing laminate having a conductive pattern - Google Patents

Photosensitive composition, photosensitive composition layer, transfer film, method for producing laminate having a conductive pattern Download PDF

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TW202309662A
TW202309662A TW111127071A TW111127071A TW202309662A TW 202309662 A TW202309662 A TW 202309662A TW 111127071 A TW111127071 A TW 111127071A TW 111127071 A TW111127071 A TW 111127071A TW 202309662 A TW202309662 A TW 202309662A
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photosensitive composition
acid
polymer
aforementioned
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児玉邦彦
山田悟
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日商富士軟片股份有限公司
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/029Inorganic compounds; Onium compounds; Organic compounds having hetero atoms other than oxygen, nitrogen or sulfur
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/30Imagewise removal using liquid means
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/40Treatment after imagewise removal, e.g. baking
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/02Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Materials For Photolithography (AREA)
  • Polymerisation Methods In General (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

The present invention provides a photosensitive composition capable of forming a resist pattern that is excellent in releasability and excellent in shape when used after storage for a predetermined period. Furthermore, a photosensitive composition layer, a transfer film, and a method for manufacturing a laminate having a conductive pattern are provided. A photosensitive composition comprises a polymer A1, a polymerizable compound B, a photopolymerization initiator C, and a photoacid generator D, or comprises a polymer A2, the aforementioned polymerizable compound B, the aforementioned photopolymerization initiator C, the aforementioned photoacid generator D and a compound E, wherein the polymer A1 is a polymer comprising a structural unit A1a having an acid-decomposable group X that is decomposed by the action of an acid to generate an acid group, and a structural unit A1b having a carboxyl group. The polymer A2 is a resin comprising a structural unit A1c having a carboxyl group. The compound E is a compound having the above-mentioned acid decomposable group X. The photoacid generator D is one or more photoacid generators selected from a group including onium salt compounds, oxime sulfonate compounds, triazine compounds, nitrobenzylsulfonate compounds, disulfone compounds and bissulfonyl diazomethane compounds.

Description

感光性組成物、感光性組成物層、轉印膜、具有導體圖案之積層體之製造方法Method for producing photosensitive composition, photosensitive composition layer, transfer film, laminate with conductor pattern

本發明係關於一種感光性組成物、感光性組成物層、轉印膜及具有導體圖案之積層體之製造方法。The present invention relates to a method for manufacturing a photosensitive composition, a photosensitive composition layer, a transfer film and a laminated body with a conductor pattern.

在印刷配線板的製造領域中,作為在蝕刻處理及電鍍處理時使用的光阻材料,廣泛使用感光性組成物或將由該感光性組成物形成之層(以下,亦稱為“感光性組成物層”。)配置於偽支撐體上而製成積層體之轉印膜。 例如,在專利文獻1中,揭示有“一種感光性樹脂組成物,係含有(A)包含由具有能夠藉由酸的作用及/或130℃~250℃的熱而分解之鍵之含不飽和雙鍵之化合物形成之構成單元之自由基聚合性聚合物、(B)光聚合性化合物及(C)光聚合起始劑而成。”。 在專利文獻1的實施例欄中,作為上述(A)成分,揭示有包含由甲基丙烯酸三級丁酯形成之構成單元之自由基聚合性聚合物及包含由甲基丙烯酸四氫吡喃酯形成之構成單元之自由基聚合性聚合物。又,在專利文獻1的實施例欄中,將作為光酸產生劑之N-(三氟甲基磺醯氧基)-1,8-萘二甲醯亞胺作為任意的添加成分摻合於組成物中。 In the field of manufacturing printed wiring boards, photosensitive compositions or layers to be formed of the photosensitive compositions (hereinafter also referred to as "photosensitive compositions") are widely used as photoresist materials used in etching and plating. Layer".) It is arranged on a pseudo-support to make a transfer film of a laminate. For example, in Patent Document 1, it is disclosed that "a photosensitive resin composition contains (A) an unsaturated compound having a bond that can be decomposed by the action of an acid and/or heat at 130°C to 250°C. It is composed of a free radical polymerizable polymer, (B) a photopolymerizable compound and (C) a photopolymerization initiator." In the Example column of Patent Document 1, as the above-mentioned (A) component, a radically polymerizable polymer comprising a constituent unit formed of tertiary butyl methacrylate and a radically polymerizable polymer comprising a unit formed of tetrahydropyranyl methacrylate are disclosed. A free-radically polymerizable polymer of constituent units formed. Also, in the Example column of Patent Document 1, N-(trifluoromethylsulfonyloxy)-1,8-naphthalimide as a photoacid generator is blended in the in the composition.

[專利文獻1] 日本特開2009-003000號公報[Patent Document 1] Japanese Patent Laid-Open No. 2009-003000

本發明者等嘗試使用由專利文獻1中所記載之感光性組成物形成之阻劑(負阻劑)形成導體圖案(尤其藉由半加成法(semi-additive method)形成導體圖案),其結果,明確了蝕刻步驟後或電鍍處理步驟之後的光阻圖案的剝離性良好,但在保管既定期間之後使用上述感光性組成物時,有時所形成之光阻圖案的形狀性會劣化(成為捲邊形狀)。若產生由感光性組成物的經時劣化而引起之光阻圖案的形狀劣化,則有可能對所形成之導體圖案的形狀性亦帶來影響。亦即,明確了關於維持蝕刻步驟後或電鍍處理步驟之後的優異的剝離性,並且抑制由感光性組成物的經時劣化而引起之光阻圖案的形狀劣化,有進一步改善的餘地。The inventors of the present invention tried to form a conductive pattern (especially a semi-additive method) using a resist (negative resist) formed of the photosensitive composition described in Patent Document 1, which As a result, it was found that the peelability of the photoresist pattern after the etching step or the plating treatment step was good, but when the photosensitive composition was used after a predetermined period of storage, the shape of the formed photoresist pattern might deteriorate (becoming curled shape). When the shape of the photoresist pattern deteriorates due to aging of the photosensitive composition, it may also affect the shape of the formed conductor pattern. That is, it was clarified that there is room for further improvement in terms of maintaining the excellent peelability after the etching step or the plating treatment step, and suppressing the deterioration of the shape of the photoresist pattern caused by the deterioration of the photosensitive composition over time.

因此,本發明的課題在於提供一種能夠形成剝離性優異且即使在保管既定期間之後使用時形狀性亦優異的光阻圖案之感光性組成物。 又,本發明的課題還在於提供一種感光性組成物層、轉印膜及具有導體圖案之積層體之製造方法。 Therefore, an object of the present invention is to provide a photosensitive composition capable of forming a photoresist pattern that is excellent in releasability and excellent in shape when used after storage for a predetermined period. Moreover, the subject of this invention is providing the manufacturing method of the laminated body which has a photosensitive composition layer, a transfer film, and a conductor pattern.

本發明者等對上述課題進行了深入研究之結果,發現了藉由以下的構成能夠解決上述課題。 〔1〕一種感光性組成物,其包含聚合物A1、聚合性化合物B、光聚合起始劑C及光酸產生劑D,或者包含聚合物A2、上述聚合性化合物B、上述光聚合起始劑C、上述光酸產生劑D及化合物E,其中 上述聚合物A1為包含具有藉由酸的作用分解而生成酸基之酸分解性基X之構成單元A1a及具有羧基之構成單元A1b之聚合物, 上述聚合物A2為包含具有羧基之構成單元A1c之樹脂, 上述化合物E為具有上述酸分解性基X之化合物, 上述光酸產生劑D為選自包括鎓鹽化合物、肟磺酸鹽化合物、三𠯤化合物、硝基苄基磺酸鹽化合物、二碸化合物及雙磺醯基重氮甲烷化合物之群組中之一種以上的光酸產生劑。 〔2〕如〔1〕所述之感光性組成物,其中 上述酸分解性基X具有酸基被藉由酸的作用分解之保護基保護而成之結構。 〔3〕如〔1〕或〔2〕所述之感光性組成物,其中 上述酸分解性基X具有三級酯結構或縮醛結構。 〔4〕如〔1〕至〔3〕之任一項所述之感光性組成物,其中 在上述聚合物A1中,上述構成單元A1a的含量相對於所有構成單元為5~40質量%,上述構成單元A1b的含量相對於所有構成單元為10~30質量%。 〔5〕如〔1〕至〔4〕之任一項所述之感光性組成物,其中 上述聚合物A1的來自於羧基之酸值為150mgKOH/g以下。 〔6〕如〔1〕至〔5〕中任一項所述之感光性組成物,其中 上述聚合物A1的來自於羧基之酸值與來自於上述酸分解性基X藉由酸的作用全部分解時由上述酸分解性基X生成之酸基之酸值的合計值為230mgKOH/g以下。 〔7〕如〔1〕所述之感光性組成物,其中 上述化合物E為具有2個以上的上述酸分解性基X之化合物。 〔8〕如〔1〕或〔7〕所述之感光性組成物,其中 上述化合物E為聚合物。 〔9〕一種感光性組成物層,其由〔1〕至〔8〕之任一項所述之感光性組成物形成。 〔10〕一種轉印膜,其具有:偽支撐體;及感光性組成物層,由〔1〕至〔8〕之任一項所述之感光性組成物形成。 〔11〕如〔10〕所述之轉印膜,其中 在上述偽支撐體與上述感光性組成物層之間進一步具有中間層。 〔12〕如〔11〕所述之轉印膜,其中 上述中間層包含水溶性樹脂。 〔13〕如〔12〕所述之轉印膜,其中 上述水溶性樹脂為選自包括水溶性纖維素衍生物、多元醇類、多元醇類的氧化物加成物、聚醚類、酚衍生物及醯胺化合物之群組中之一種以上。 〔14〕一種具有導體圖案之積層體之製造方法,其使用〔10〕至〔13〕之任一項所述之轉印膜,該具有導體圖案之積層體之製造方法具有: 貼合步驟,以上述轉印膜的與偽支撐體側相反之面與表面具有導電層之基板的上述導電層接觸之方式,將轉印膜和上述基板進行貼合; 曝光步驟,對上述感光性組成物層進行圖案曝光; 光阻圖案形成步驟,對經曝光之上述感光性組成物層實施顯影處理而形成光阻圖案; 蝕刻處理步驟或電鍍處理步驟,對位於未配置有上述光阻圖案之區域之上述導電層進行蝕刻處理或電鍍處理;及 光阻圖案剝離步驟,剝離上述光阻圖案, 當具有上述電鍍處理步驟時,進一步具有去除因上述光阻圖案剝離步驟而露出之上述導電層並在上述基板上形成導體圖案之去除步驟,其中 在上述貼合步驟與上述曝光步驟之間或上述曝光步驟與上述顯影步驟之間進一步具有剝離上述偽支撐體之偽支撐體剝離步驟。 〔15〕如〔14〕所述之具有導體圖案之積層體之製造方法,其中 在上述光阻圖案形成步驟與上述光阻圖案剝離步驟之間進一步具有加熱步驟。 〔16〕如〔14〕或〔15〕所述之具有導體圖案之積層體之製造方法,其中 用於上述光阻圖案剝離步驟之剝離液的pH為13以上。 〔17〕如〔14〕至〔16〕之任一項所述之具有導體圖案之積層體之製造方法,其中 用於上述光阻圖案形成步驟之顯影液的pH未達13。 〔18〕如〔14〕至〔17〕之任一項所述之具有導體圖案之積層體之製造方法,其中 從用於上述光阻圖案剝離步驟之剝離液的pH減去用於上述光阻圖案形成步驟之顯影液的pH之值為1以上。 〔19〕如〔14〕至〔18〕之任一項所述之具有導體圖案之積層體之製造方法,其中 從用於上述光阻圖案剝離步驟之剝離液的溫度減去用於上述光阻圖案形成步驟之顯影液的溫度之值為10℃以上。 〔20〕如〔14〕至〔19〕之任一項所述之具有導體圖案之積層體之製造方法,其中 上述曝光步驟中的曝光方式為遮罩曝光、直接成像曝光及投影曝光中的任一種。 〔21〕如〔14〕至〔20〕之任一項所述之具有導體圖案之積層體之製造方法,其中 上述偽支撐體的厚度未達16μm。 〔22〕如〔14〕至〔21〕之任一項所述之具有導體圖案之積層體之製造方法,其中 在上述貼合步驟與上述曝光步驟之間具有上述偽支撐體剝離步驟。 〔23〕如〔14〕至〔22〕之任一項所述之具有導體圖案之積層體之製造方法,其中 上述轉印膜在上述偽支撐體與上述感光性組成物層之間包含中間層, 在上述貼合步驟與上述曝光步驟之間具有上述偽支撐體剝離步驟, 上述曝光步驟為使因上述偽支撐體剝離步驟而露出之上述中間層與遮罩接觸而實施曝光處理之步驟。 [發明效果] As a result of intensive studies on the above-mentioned problems, the inventors of the present invention found that the above-mentioned problems can be solved by the following configurations. [1] A photosensitive composition comprising polymer A1, polymerizable compound B, photopolymerization initiator C, and photoacid generator D, or comprising polymer A2, the aforementioned polymerizable compound B, the aforementioned photopolymerizable initiator Agent C, the above-mentioned photoacid generator D and compound E, wherein The above-mentioned polymer A1 is a polymer comprising a structural unit A1a having an acid-decomposable group X that is decomposed by the action of an acid to generate an acid group, and a structural unit A1b having a carboxyl group, The above-mentioned polymer A2 is a resin comprising a structural unit A1c having a carboxyl group, The above-mentioned compound E is a compound having the above-mentioned acid decomposable group X, The above-mentioned photoacid generator D is selected from the group consisting of onium salt compounds, oxime sulfonate compounds, trisulphonate compounds, nitrobenzyl sulfonate compounds, disulfide compounds and bissulfonyldiazomethane compounds. More than one photoacid generator. [2] The photosensitive composition according to [1], wherein The above-mentioned acid-decomposable group X has a structure in which an acid group is protected by a protecting group decomposed by the action of an acid. [3] The photosensitive composition as described in [1] or [2], wherein The acid-decomposable group X has a tertiary ester structure or an acetal structure. [4] The photosensitive composition according to any one of [1] to [3], wherein In said polymer A1, content of the said structural unit A1a is 5-40 mass % with respect to all structural units, and content of the said structural unit A1b is 10-30 mass % with respect to all structural units. [5] The photosensitive composition according to any one of [1] to [4], wherein The acid value derived from the carboxyl group of the said polymer A1 is 150 mgKOH/g or less. [6] The photosensitive composition according to any one of [1] to [5], wherein The total value of the acid value derived from the carboxyl group of the above-mentioned polymer A1 and the acid value derived from the acid group generated from the above-mentioned acid-decomposable group X when the above-mentioned acid-decomposable group X is completely decomposed by the action of an acid is 230 mgKOH/g or less . [7] The photosensitive composition according to [1], wherein The above-mentioned compound E is a compound having two or more of the above-mentioned acid-decomposable groups X. [8] The photosensitive composition according to [1] or [7], wherein The above compound E is a polymer. [9] A photosensitive composition layer formed of the photosensitive composition described in any one of [1] to [8]. [10] A transfer film comprising: a pseudo-support; and a photosensitive composition layer formed of the photosensitive composition described in any one of [1] to [8]. [11] The transfer film according to [10], wherein An intermediate layer is further provided between the dummy support and the photosensitive composition layer. [12] The transfer film according to [11], wherein The above-mentioned intermediate layer contains a water-soluble resin. [13] The transfer film according to [12], wherein The water-soluble resin is at least one selected from the group consisting of water-soluble cellulose derivatives, polyols, oxide adducts of polyols, polyethers, phenol derivatives, and amide compounds. [14] A method for producing a laminate with a conductive pattern, using the transfer film described in any one of [10] to [13], the method for producing a laminate with a conductive pattern comprising: Bonding step, bonding the transfer film and the above-mentioned substrate in such a way that the surface of the above-mentioned transfer film opposite to the side of the dummy support is in contact with the above-mentioned conductive layer of the substrate having a conductive layer on the surface; Exposure step, performing pattern exposure on the photosensitive composition layer; A photoresist pattern forming step, performing a development treatment on the exposed photosensitive composition layer to form a photoresist pattern; an etching treatment step or an electroplating treatment step, performing etching treatment or electroplating treatment on the above-mentioned conductive layer located in the area where the above-mentioned photoresist pattern is not arranged; and a photoresist pattern stripping step, stripping the above photoresist pattern, When having the above-mentioned electroplating treatment step, there is further a removal step of removing the above-mentioned conductive layer exposed by the above-mentioned photoresist pattern stripping step and forming a conductive pattern on the above-mentioned substrate, wherein Between the bonding step and the exposing step or between the exposing step and the developing step, there is further a dummy support peeling step for peeling off the dummy support. [15] The method for producing a laminate having a conductor pattern according to [14], wherein A heating step is further provided between the photoresist pattern forming step and the photoresist pattern stripping step. [16] The method for producing a laminate having a conductor pattern according to [14] or [15], wherein The pH of the stripping liquid used in the stripping step of the photoresist pattern is above 13. [17] The method for producing a laminate having a conductor pattern according to any one of [14] to [16], wherein The pH of the developer used in the above photoresist pattern forming step was less than 13. [18] The method for producing a laminate having a conductor pattern according to any one of [14] to [17], wherein The value obtained by subtracting the pH of the developing solution used in the resist pattern forming step from the pH of the stripping solution used in the resist pattern stripping step is 1 or more. [19] The method for producing a laminate having a conductor pattern according to any one of [14] to [18], wherein A value obtained by subtracting the temperature of the developing solution used in the resist pattern forming step from the temperature of the stripping solution used in the resist pattern stripping step is 10° C. or more. [20] The method for producing a laminate having a conductor pattern according to any one of [14] to [19], wherein The exposure method in the above exposure step is any one of mask exposure, direct imaging exposure and projection exposure. [21] The method for producing a laminate having a conductor pattern according to any one of [14] to [20], wherein The thickness of the above pseudo-support is less than 16 μm. [22] The method for producing a laminate having a conductor pattern according to any one of [14] to [21], wherein The dummy support peeling step is provided between the bonding step and the exposing step. [23] The method for producing a laminate having a conductor pattern according to any one of [14] to [22], wherein The transfer film includes an intermediate layer between the dummy support and the photosensitive composition layer, There is the step of peeling off the dummy support between the step of laminating and the step of exposing, The exposure step is a step of exposing the intermediate layer exposed in the dummy support peeling step to a mask. [Invention effect]

依本發明,能夠提供能夠形成剝離性優異且即使在保管既定期間之後使用時形狀性亦優異的光阻圖案之感光性組成物。 又,依本發明,還能夠提供感光性組成物層、轉印膜及具有導體圖案之積層體之製造方法。 According to the present invention, it is possible to provide a photosensitive composition capable of forming a photoresist pattern that is excellent in releasability and excellent in shape when used after storage for a predetermined period. Moreover, according to this invention, the manufacturing method of the laminated body which has a photosensitive composition layer, a transfer film, and a conductor pattern can also be provided.

以下,對本發明進行詳細說明。 示出本說明書中的以下的各標記的含義。 使用“~”表示之數值範圍係指將記載於“~”的前後之數值作為下限及上限而包含之範圍。 在階段性地記載之數值範圍中,以某一數值範圍記載之上限或下限可以被替換為其他階段性地記載之數值範圍的上限或下限。又,在本說明書中所記載之數值範圍中,以某一數值範圍記載之上限或下限亦可以被替換為實施例所示之值。 “步驟”不僅包括獨立之步驟,即使在無法與其他步驟明確地區分之情況下,只要可達成該步驟的預期目的,則亦包括在本術語中。 只要沒有特別指定,則“透明”係指波長400~700nm的可見光的平均透射率為80%以上,90%以上為較佳。 可見光的平均透射率係使用分光光度計測量之值,例如能夠使用Hitachi, Ltd.製造之分光光度計U-3310進行測量。 只要沒有特別指定,則折射率係在波長550nm下使用橢圓偏光計測量之值。 只要沒有特別指定,則色相係使用色差計(CR-221,MINOLTA公司製造)測量之值。 Hereinafter, the present invention will be described in detail. The meanings of the following symbols in this specification are shown. The numerical range represented by "-" means the range which includes the numerical value described before and after "-" as a lower limit and an upper limit. In numerical ranges stated step by step, the upper limit or lower limit stated in a certain numerical range may be replaced with the upper limit or lower limit of other numerical ranges stated stepwise. In addition, in the numerical range described in this specification, the upper limit or the lower limit described in a certain numerical range may be replaced with the value shown in an Example. "Step" not only includes an independent step, but also includes in this term as long as the intended purpose of the step can be achieved even if it cannot be clearly distinguished from other steps. Unless otherwise specified, "transparent" means that the average transmittance of visible light with a wavelength of 400 to 700 nm is 80% or more, preferably 90% or more. The average transmittance of visible light is a value measured using a spectrophotometer, for example, can be measured using a spectrophotometer U-3310 manufactured by Hitachi, Ltd. Unless otherwise specified, the refractive index is a value measured using an ellipsometer at a wavelength of 550 nm. Unless otherwise specified, the hue is a value measured using a color difference meter (CR-221, manufactured by MINOLTA).

只要沒有特別指定,則重量平均分子量(Mw)及數量平均分子量(Mn)係作為管柱而使用TSKgel GMHxL、TSKgel G4000HxL、TSKgel G2000HxL(均為TOSOH CORPORATION製造之商品名)、作為洗提液而使用THF(四氫呋喃)、作為檢測器而使用示差折射計及作為標準物質而使用聚苯乙烯並利用凝膠滲透層析(GPC)分析裝置測量之使用標準物質的聚苯乙烯換算之值。 只要沒有特別指定,則具有分子量分佈之化合物的分子量係重量平均分子量(Mw)。 只要沒有特別指定,則金屬元素的含量係使用感應耦合電漿(ICP:Inductively Coupled Plasma)分光分析裝置測量之值。 “(甲基)丙烯酸基”係包含丙烯酸基及甲基丙烯酸基這兩者之概念,“(甲基)丙烯醯氧基”係包含丙烯醯氧基及甲基丙烯醯氧基這兩者之概念,“(甲基)丙烯酸酯”係包含丙烯酸酯及甲基丙烯酸酯這兩者之概念。 “鹼可溶性”係指在22℃下對碳酸鈉的1質量%水溶液100g之溶解度為0.1g以上。亦即,“鹼可溶性樹脂”係指滿足上述溶解度之樹脂。 “水溶性”係指對液溫為22℃的pH7.0的水100g之溶解度為0.1g以上。亦即,“水溶性樹脂”係指滿足上述溶解度之樹脂。 Unless otherwise specified, TSKgel GMHxL, TSKgel G4000HxL, and TSKgel G2000HxL (all are trade names manufactured by TOSOH CORPORATION) are used as columns and eluents for weight average molecular weight (Mw) and number average molecular weight (Mn). THF (tetrahydrofuran), using a differential refractometer as a detector, and using polystyrene as a standard substance, is a value in terms of polystyrene using a standard substance measured with a gel permeation chromatography (GPC) analyzer. Unless otherwise specified, the molecular weight of a compound having a molecular weight distribution is a weight average molecular weight (Mw). Unless otherwise specified, the content of metal elements is the value measured using an inductively coupled plasma (ICP: Inductively Coupled Plasma) spectroscopic analyzer. "(Meth)acryl" is a concept that includes both acryl and methacryl, and "(meth)acryloxy" is a concept that includes both acryloxy and methacryloxy. The concept, "(meth)acrylate" is a concept including both acrylate and methacrylate. "Alkali solubility" means that the solubility with respect to 100 g of 1 mass % aqueous solutions of sodium carbonate at 22 degreeC is 0.1 g or more. That is, "alkali-soluble resin" refers to a resin satisfying the above solubility. "Water solubility" means that the solubility to 100 g of water of pH 7.0 at a liquid temperature of 22° C. is 0.1 g or more. That is, "water-soluble resin" refers to a resin satisfying the above-mentioned solubility.

組成物(例如,感光性組成物等)的“固體成分”係指形成使用組成物形成之組成物層(例如,感光性組成物層等)之成分,當組成物包含溶劑(例如,有機溶劑及水等)時,係指除溶劑以外的所有成分。又,若為形成組成物層(例如,感光性組成物層等)之成分,則液體狀的成分亦視為固體成分。The "solid content" of a composition (such as a photosensitive composition, etc.) means a component that forms a composition layer (such as a photosensitive composition layer, etc.) formed using the composition. When the composition contains a solvent (such as an organic solvent and water, etc.), it refers to all components except solvents. Moreover, as long as it is a component which forms a composition layer (for example, a photosensitive composition layer etc.), a liquid component is also considered as a solid component.

[感光性組成物] 本發明的感光性組成物為包含聚合物A1、聚合性化合物B、光聚合起始劑C及光酸產生劑D,或者包含聚合物A2、上述聚合性化合物B、上述光聚合起始劑C、上述光酸產生劑D及化合物E之感光性組成物,其中 上述聚合物A1為包含具有藉由酸的作用分解而生成酸基之酸分解性基X(以下,亦有時縮寫為“酸分解性基X”。)之構成單元A1a(以下,亦有時縮寫為“構成單元A1a”。)及具有羧基之構成單元A1b(以下,亦有時縮寫為“構成單元A1b”。)之聚合物, 上述聚合物A2為包含具有羧基之構成單元A1c(以下,亦有時縮寫為“構成單元A1c”。)之樹脂, 上述化合物E為具有上述酸分解性基X之化合物, 上述光酸產生劑D為選自包括鎓鹽化合物、肟磺酸鹽化合物、三𠯤化合物、硝基苄基磺酸鹽化合物、二碸化合物及雙磺醯基重氮甲烷化合物(以下,將該等統稱為“特定光酸產生劑”。)之群組中之一種以上的光酸產生劑。 [Photosensitive composition] The photosensitive composition of the present invention contains polymer A1, polymerizable compound B, photopolymerization initiator C, and photoacid generator D, or polymer A2, the above-mentioned polymerizable compound B, and the above-mentioned photopolymerization initiator C . The photosensitive composition of the above-mentioned photoacid generator D and compound E, wherein The above-mentioned polymer A1 is composed of a structural unit A1a (hereinafter, sometimes abbreviated as "acid decomposable group X") having an acid decomposable group X (hereinafter, sometimes abbreviated as "acid decomposable group X") having an acid group that is decomposed by the action of an acid. Abbreviated as "constituent unit A1a.") and a polymer having a carboxyl group-constituent unit A1b (hereinafter, sometimes abbreviated as "constituent unit A1b".), The above-mentioned polymer A2 is a resin containing a structural unit A1c (hereinafter, sometimes abbreviated as "structural unit A1c") having a carboxyl group, The above-mentioned compound E is a compound having the above-mentioned acid decomposable group X, The above-mentioned photoacid generator D is selected from the group consisting of onium salt compounds, oxime sulfonate compounds, trisulphonate compounds, nitrobenzyl sulfonate compounds, disulfide compounds and bissulfonyldiazomethane compounds (hereinafter, the etc. are collectively referred to as "specific photoacid generators".) One or more photoacid generators in the group.

亦即,本發明的感光性組成物為下述第1實施形態的感光性組成物或為下述第2實施形態的感光性組成物。 <<第1實施形態的感光性組成物>> 一種感光性組成物,其包含聚合物A1、聚合性化合物B、光聚合起始劑C及光酸產生劑D, 上述聚合物A1為包含具有酸分解性基X之構成單元A1a及具有羧基之構成單元A1b之聚合物, 上述光酸產生劑D為選自包括特定光酸產生劑之群組中之一種以上的光酸產生劑。 <<第2實施形態的感光性組成物>> 一種感光性組成物,其包含聚合物A2、聚合性化合物B、光聚合起始劑C、光酸產生劑D及化合物E, 上述聚合物A2為包含具有羧基之構成單元A1c之樹脂, 上述化合物E為具有酸分解性基X之化合物, 上述光酸產生劑D為選自包括特定光酸產生劑之群組中之一種以上的光酸產生劑。 That is, the photosensitive composition of this invention is the photosensitive composition of the following 1st embodiment, or it is the photosensitive composition of the following 2nd embodiment. <<Photosensitive composition of the first embodiment>> A photosensitive composition comprising a polymer A1, a polymerizable compound B, a photopolymerization initiator C and a photoacid generator D, The above-mentioned polymer A1 is a polymer comprising a structural unit A1a having an acid-decomposable group X and a structural unit A1b having a carboxyl group, The above photoacid generator D is one or more photoacid generators selected from the group including specific photoacid generators. <<Photosensitive composition of the second embodiment>> A photosensitive composition comprising polymer A2, polymerizable compound B, photopolymerization initiator C, photoacid generator D and compound E, The above-mentioned polymer A2 is a resin comprising a structural unit A1c having a carboxyl group, The above-mentioned compound E is a compound having an acid decomposable group X, The above photoacid generator D is one or more photoacid generators selected from the group including specific photoacid generators.

依據具有這種構成之本發明的感光性組成物,能夠形成剝離性優異且即使在保管既定期間之後使用時形狀性亦優異的光阻圖案。According to the photosensitive composition of this invention which has such a structure, the photoresist pattern which is excellent in releasability and excellent in formability even when it is used after storage for a predetermined period can be formed.

本發明的感光性組成物發揮所期望的效果之作用機制的詳細內容雖然不明確,但本發明者等推測如下。 上述感光性組成物為所謂的負型感光性組成物,適合於鹼顯影。由上述感光性組成物形成之感光性組成物層為如下構成:在曝光部硬化而使對鹼顯影液之溶解性降低,另一方面,在未曝光部藉由聚合物A1所具有之構成單元A1b或聚合物A2所具有之構成單元A1c的存在而容易溶解於鹼顯影液。其結果,在曝光部及未曝光部產生溶解對比度,藉此能夠形成光阻圖案。在此,上述感光性組成物包含特定光酸產生劑。該特定光酸產生劑能夠在既定的曝光波長下裂解而產生酸。所生成之產生酸通常在曝光後任意實施之加熱處理(烘烤處理)時能夠在加熱的作用下擴散而使酸分解性基X分解,從而使其轉化為酸基。藉此,光阻圖案中的酸基的量增加,光阻圖案對剝離液之溶解性提高。例如,當感光性組成物中的聚合性化合物B的硬化反應和特定酸產生劑基於感光之裂解/產生酸的生成在大致相同的曝光波長的光下進行時,在形成光阻圖案之後,例如在蝕刻步驟之後或電鍍處理步驟之後且剝離光阻圖案之前,對光阻圖案實施加熱處理(烘烤處理)而進行基於產生酸之酸分解性基X的分解為較佳。又,當感光性組成物中的聚合性化合物B的硬化反應和特定酸產生劑基於感光之裂解/產生酸的生成不在大致相同的曝光波長的光下進行時(換言之,在進行感光性組成物中的聚合性化合物B的硬化反應之曝光波長的光下不產生特定酸產生劑基於感光之裂解/產生酸的生成時),在形成光阻圖案之後,例如在蝕刻步驟之後或電鍍處理步驟之後且剝離光阻圖案之前,對光阻圖案在特定光酸產生劑的感光波長下進行全面曝光且實施加熱處理(烘烤處理)而進行基於產生酸之酸分解性基X的分解為較佳。 The details of the action mechanism by which the photosensitive composition of the present invention exhibits the desired effect are not clear, but the inventors of the present invention presume as follows. The said photosensitive composition is what is called a negative photosensitive composition, and is suitable for alkali image development. The photosensitive composition layer formed of the above-mentioned photosensitive composition has the following structure: the exposed part is hardened to reduce the solubility of the alkali developer, and on the other hand, the unexposed part is formed by the structural unit of the polymer A1 The presence of A1b or the constituent unit A1c contained in the polymer A2 makes it easy to dissolve in an alkaline developing solution. As a result, a dissolution contrast is generated between the exposed portion and the unexposed portion, whereby a resist pattern can be formed. Here, the said photosensitive composition contains a specific photoacid generator. The specific photoacid generator can be cleaved at a given exposure wavelength to generate acid. The generated acid is usually able to diffuse under the action of heat to decompose the acid decomposable group X during any heat treatment (baking treatment) performed after exposure, thereby converting it into an acid group. Thereby, the amount of acid groups in the photoresist pattern increases, and the solubility of the photoresist pattern to the stripping solution is improved. For example, when the hardening reaction of the polymerizable compound B in the photosensitive composition and the photosensitive cleavage/acid generation of the specific acid generator are carried out under light of approximately the same exposure wavelength, after forming a photoresist pattern, for example It is preferable to heat-treat (baking) the resist pattern to decompose by the acid-generating acid-decomposable group X after the etching step or after the plating step and before stripping the resist pattern. Also, when the hardening reaction of the polymerizable compound B in the photosensitive composition and the photosensitive cleavage/acid generation of the specific acid generator do not proceed under light of approximately the same exposure wavelength (in other words, when the photosensitive composition The hardening reaction of the polymerizable compound B in the light of the exposure wavelength does not generate a specific acid generator based on photolysis/acid generation), after forming a photoresist pattern, such as after an etching step or a plating treatment step Before stripping the photoresist pattern, it is preferable to decompose the photoresist pattern by the acid-generating acid-decomposable group X by fully exposing the photoresist pattern at the photosensitive wavelength of a specific photoacid generator and performing heat treatment (baking treatment).

再者,藉由這次本發明者等的研究,明確了當使用特定光酸產生劑作為光酸產生劑時,能夠形成即使在將感光性組成物保管既定期間之後使用時形狀性亦優異的圖案(以下,亦稱為“經時後的形狀穩定性優異”。)。這從本說明書的實施例欄中的實施例及比較例1(使用N-(三氟甲基磺醯氧基)-1,8-萘二甲醯亞胺作為光酸產生劑。)的對比亦可明確。Furthermore, according to the studies of the present inventors, it has been clarified that when a specific photoacid generator is used as the photoacid generator, it is possible to form a pattern with excellent shape even after storing the photosensitive composition for a predetermined period of time. (Hereinafter, it is also referred to as "excellent shape stability over time".). This is from the comparison of Examples and Comparative Example 1 (using N-(trifluoromethylsulfonyloxy)-1,8-naphthalimide as a photoacid generator.) in the Example column of this specification can also be specified.

以下,將光阻圖案的剝離性更優異及/或感光性組成物的經時後的形狀穩定性更優異亦稱為“本發明的效果更優異”。Hereinafter, the more excellent peelability of the resist pattern and/or the more excellent time-lapse shape stability of the photosensitive composition are also referred to as "more excellent effects of the present invention".

〔第1實施形態的感光性組成物〕 以下,對第1實施形態的感光性組成物進行說明。第1實施形態的感光性組成物為負型的感光性組成物為較佳。 第1實施形態的感光性組成物包含聚合物A1。以下,首先對聚合物A1進行說明。 [Photosensitive composition of the first embodiment] Hereinafter, the photosensitive composition of 1st Embodiment is demonstrated. It is preferable that the photosensitive composition of 1st Embodiment is a negative photosensitive composition. The photosensitive composition of 1st Embodiment contains polymer A1. Hereinafter, polymer A1 will be described first.

<聚合物A1> 聚合物A1為包含具有酸分解性基X之構成單元A1a及具有羧基之構成單元A1b之聚合物。 聚合物A1為鹼可溶性樹脂為較佳。 <Polymer A1> Polymer A1 is a polymer including a structural unit A1a having an acid-decomposable group X and a structural unit A1b having a carboxyl group. Polymer A1 is preferably an alkali-soluble resin.

(酸分解性基X) 酸分解性基X為藉由酸的作用分解而生成酸基之基。藉由包含酸分解性基X,聚合物A1能夠藉由酸的作用分解而極性增大。 作為酸分解性基X,酸基被藉由酸的作用分解(亦包括脫離)之保護基保護而成之結構為較佳。 (acid decomposable group X) The acid-decomposable group X is a group that is decomposed by the action of an acid to generate an acid group. By including the acid-decomposable group X, the polymer A1 can be decomposed by the action of an acid to increase its polarity. As the acid decomposable group X, a structure in which an acid group is protected by a protecting group that is decomposed (including detachment) by the action of an acid is preferable.

作為酸基,鹼可溶性基為較佳,例如可以舉出羧基、酚性羥基、氟化醇基、磺酸基、磷酸基、磺醯胺基、磺醯亞胺基、(烷基磺醯基)(烷基羰基)亞甲基、(烷基磺醯基)(烷基羰基)醯亞胺基、雙(烷基羰基)亞甲基、雙(烷基羰基)醯亞胺基、雙(烷基磺醯基)亞甲基、雙(烷基磺醯基)醯亞胺基、三(烷基羰基)亞甲基及三(烷基磺醯基)亞甲基等酸性基以及醇性羥基等。其中,作為酸基,羧基或酚性羥基為較佳。As the acid group, an alkali-soluble group is preferable, for example, a carboxyl group, a phenolic hydroxyl group, a fluorinated alcohol group, a sulfonic acid group, a phosphoric acid group, a sulfonamide group, a sulfonimide group, an (alkylsulfonyl group) )(alkylcarbonyl)methylene, (alkylsulfonyl)(alkylcarbonyl)imide, bis(alkylcarbonyl)methylene, bis(alkylcarbonyl)imide, bis( Acidic groups such as alkylsulfonyl)methylene, bis(alkylsulfonyl)imide, tris(alkylcarbonyl)methylene and tris(alkylsulfonyl)methylene, and alcoholic Hydroxy etc. Among these, a carboxyl group or a phenolic hydroxyl group is preferable as an acidic group.

作為藉由酸的作用分解之保護基(藉由酸的作用脫離之脫離基),例如可以舉出式(Y1)~(Y4)所表示之基。 式(Y1):-C(Rx 1)(Rx 2)(Rx 3) 式(Y2):-C(=O)OC(Rx 1)(Rx 2)(Rx 3) 式(Y3):-C(R 36)(R 37)(OR 38) 式(Y4):-Si(Rx 1)(Rx 2)(Rx 3Examples of the protecting group decomposed by the action of an acid (a detachment group detached by the action of an acid) include groups represented by formulas (Y1) to (Y4). Formula (Y1): -C (Rx 1 ) (Rx 2 ) (Rx 3 ) Formula (Y2): -C (=O)OC (Rx 1 ) (Rx 2 ) (Rx 3 ) Formula (Y3): -C (R 36 )(R 37 )(OR 38 ) Formula (Y4): -Si(Rx 1 )(Rx 2 )(Rx 3 )

式(Y1)、式(Y2)及式(Y4)中,Rx 1~Rx 3各自獨立地表示烷基(直鏈狀或支鏈狀)、環烷基(單環或多環)、烯基(直鏈狀或支鏈狀)或芳基(單環或多環)。另外,當Rx 1~Rx 3全部為烷基(直鏈狀或支鏈狀)時,Rx 1~Rx 3中至少2個為甲基為較佳。 其中,Rx 1~Rx 3各自獨立地表示直鏈狀或支鏈狀的烷基為較佳,Rx 1~Rx 3各自獨立地表示直鏈狀的烷基為更佳。 Rx 1~Rx 3中的2個可以鍵結而形成單環或多環。 作為Rx 1~Rx 3的烷基,甲基、乙基、正丙基、異丙基、正丁基、異丁基及三級丁基等碳數1~5的烷基為較佳。 作為Rx 1~Rx 3的環烷基,環戊基及環己基等單環的環烷基以及降莰基、四環癸基、四環十二烷基及金剛烷基等多環的環烷基為較佳。 作為Rx 1~Rx 3的芳基,碳數6~10的芳基為較佳,例如可以舉出苯基、萘基及蒽基等。 作為Rx 1~Rx 3的烯基,乙烯基為較佳。 作為Rx 1~Rx 3中的2個鍵結而形成之環,環烷基為較佳。作為Rx 1~Rx 3中的2個鍵結而形成之環烷基,環戊基或環己基等單環的環烷基、或降莰基、四環癸基、四環十二烷基或金剛烷基等多環的環烷基為較佳,碳數5~6的單環的環烷基為更佳。 在Rx 1~Rx 3中的2個鍵結而形成之環烷基中,例如,構成環之亞甲基中的1個可以被氧原子等雜原子、羰基等具有雜原子之基或亞乙烯基取代。又,在該等環烷基中,構成環烷環之伸乙基中的1個以上可以被亞乙烯基取代。 作為式(Y1)、式(Y2)及式(Y4)所表示之基的較佳態樣的一例,還可以舉出Rx 1為甲基或乙基且Rx 2與Rx 3鍵結而形成上述環烷基之態樣。 In formula (Y1), formula (Y2) and formula (Y4), Rx 1 to Rx 3 each independently represent an alkyl group (linear or branched), cycloalkyl (monocyclic or polycyclic), alkenyl (linear or branched) or aryl (monocyclic or polycyclic). In addition, when all of Rx 1 to Rx 3 are alkyl groups (linear or branched), at least two of Rx 1 to Rx 3 are preferably methyl groups. Among them, Rx 1 to Rx 3 each independently represent a straight-chain or branched alkyl group is preferable, and Rx 1 to Rx 3 each independently represent a straight-chain alkyl group is more preferable. Two of Rx 1 to Rx 3 may be bonded to form a monocyclic or polycyclic ring. As the alkyl group of Rx 1 to Rx 3 , an alkyl group having 1 to 5 carbon atoms such as methyl group, ethyl group, n-propyl group, isopropyl group, n-butyl group, isobutyl group and tertiary butyl group is preferable. Cycloalkyl groups for Rx 1 to Rx 3 , monocyclic cycloalkyl groups such as cyclopentyl and cyclohexyl, and polycyclic cycloalkanes such as norbornyl, tetracyclodecanyl, tetracyclododecyl, and adamantyl base is better. As the aryl group for Rx 1 to Rx 3 , an aryl group having 6 to 10 carbon atoms is preferable, and examples thereof include phenyl, naphthyl, and anthracenyl. As the alkenyl group for Rx 1 to Rx 3 , a vinyl group is preferable. A cycloalkyl group is preferable as a ring formed by bonding two of Rx 1 to Rx 3 . Cycloalkyl formed as two bonds among Rx 1 to Rx 3 , monocyclic cycloalkyl such as cyclopentyl or cyclohexyl, or norbornyl, tetracyclodecanyl, tetracyclododecyl or Polycyclic cycloalkyl groups such as adamantyl groups are preferred, and monocyclic cycloalkyl groups having 5 to 6 carbon atoms are more preferred. In the cycloalkyl group formed by bonding two of Rx 1 to Rx 3 , for example, one of the methylene groups constituting the ring may be replaced by a heteroatom such as an oxygen atom, a group having a heteroatom such as a carbonyl group, or vinylidene base substitution. In addition, in these cycloalkyl groups, one or more ethylidene groups constituting the cycloalkane ring may be substituted with vinylidene groups. As an example of a preferred aspect of the groups represented by formula (Y1), formula (Y2) and formula (Y4), Rx 1 is a methyl or ethyl group and Rx 2 and Rx 3 are bonded to form the above-mentioned Forms of cycloalkyl groups.

式(Y3)中,R 36~R 38各自獨立地表示氫原子或1價的有機基。R 37與R 38可以相互鍵結而形成環。作為1價的有機基,可以舉出烷基、環烷基、芳基、芳烷基及烯基等。R 36為氫原子亦為較佳。 另外,上述烷基、環烷基、芳基及芳烷基中可以包含氧原子等雜原子及/或羰基等具有雜原子之基。例如,在上述烷基、環烷基、芳基及芳烷基中,例如,亞甲基中的1個以上可以被氧原子等雜原子及/或羰基等具有雜原子之基取代。 In formula (Y3), R 36 to R 38 each independently represent a hydrogen atom or a monovalent organic group. R 37 and R 38 may be bonded to each other to form a ring. As a monovalent organic group, an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group, an alkenyl group, etc. are mentioned. R 36 is also preferably a hydrogen atom. In addition, the above-mentioned alkyl group, cycloalkyl group, aryl group and aralkyl group may contain a heteroatom such as an oxygen atom and/or a group having a heteroatom such as a carbonyl group. For example, among the above-mentioned alkyl groups, cycloalkyl groups, aryl groups, and aralkyl groups, for example, one or more methylene groups may be substituted with a heteroatom such as an oxygen atom and/or a group having a heteroatom such as a carbonyl group.

作為式(Y3),下述式(Y3-1)所表示之基為較佳。As the formula (Y3), a group represented by the following formula (Y3-1) is preferable.

[化學式1]

Figure 02_image001
[chemical formula 1]
Figure 02_image001

其中,L 1及L 2各自獨立地表示氫原子、烷基、環烷基、芳基或將該等組合而成之基(例如,將烷基與芳基組合而成之基)。 M表示單鍵或2價的連結基。 Q表示可以包含雜原子之烷基、可以包含雜原子之環烷基、可以包含雜原子之芳基、胺基、銨基、巰基、氰基、醛基或將該等組合而成之基(例如,將烷基與環烷基組合而成之基)。 在烷基及環烷基中,例如,亞甲基中的1個可以被氧原子等雜原子或羰基等具有雜原子之基取代。 另外,L 1及L 2中的一者為氫原子且另一者為烷基、環烷基、芳基或將伸烷基與芳基組合而成之基為較佳。 Q、M及L 1中的至少2個可以鍵結而形成環(較佳為5員或6員環)。 在圖案的微細化的觀點上,L 2為二級或三級烷基為較佳,三級烷基為更佳。作為二級烷基,可以舉出異丙基、環己基或降莰基,作為三級烷基,可以舉出三級丁基或金剛烷基。 Wherein, L 1 and L 2 each independently represent a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, or a combination thereof (for example, a combination of an alkyl group and an aryl group). M represents a single bond or a divalent linking group. Q represents an alkyl group that may contain heteroatoms, a cycloalkyl group that may contain heteroatoms, an aryl group that may contain heteroatoms, an amino group, an ammonium group, a mercapto group, a cyano group, an aldehyde group, or a combination thereof ( For example, a combination of an alkyl group and a cycloalkyl group). In an alkyl group and a cycloalkyl group, for example, one of the methylene groups may be substituted with a heteroatom such as an oxygen atom or a group having a heteroatom such as a carbonyl group. In addition, it is preferable that one of L 1 and L 2 is a hydrogen atom and the other is an alkyl group, a cycloalkyl group, an aryl group, or a combination of an alkylene group and an aryl group. At least two of Q, M and L may be bonded to form a ring (preferably a 5-membered or 6-membered ring). From the viewpoint of pattern miniaturization, L 2 is preferably a secondary or tertiary alkyl group, more preferably a tertiary alkyl group. Examples of the secondary alkyl group include isopropyl, cyclohexyl, and norbornyl, and examples of the tertiary alkyl group include tertiary butyl or adamantyl.

作為酸分解性基X,在本發明的效果更優異的觀點上,羧基或酚性羥基被上述式(Y1)~式(Y4)所表示之任一保護基保護之結構為較佳,羧基被式(Y1)及式(Y3)所表示之任一保護基保護之結構或酚性羥基被式(Y1)~式(Y4)所表示之任一保護基保護之結構為更佳。 另外,例如,當為羧基被式(Y1)所表示之保護基保護之結構時,酸分解性基X包含三級酯結構。又,當為羧基被式(Y3)所表示之保護基保護之結構時或酚性羥基被式(Y3)所表示之保護基保護之結構時,酸分解性基X包含縮醛結構。 As the acid decomposable group X, from the viewpoint of more excellent effect of the present invention, the carboxyl group or phenolic hydroxyl group is preferably protected by any protecting group represented by the above formula (Y1) to formula (Y4), and the carboxyl group is protected by The structure protected by any protecting group represented by formula (Y1) and formula (Y3), or the structure in which the phenolic hydroxyl group is protected by any protecting group represented by formula (Y1) to formula (Y4) is more preferable. Also, for example, when the carboxyl group is protected by a protecting group represented by formula (Y1), the acid-decomposable group X includes a tertiary ester structure. Also, when the carboxyl group is protected by a protecting group represented by formula (Y3) or the phenolic hydroxyl group is protected by a protecting group represented by formula (Y3), the acid-decomposable group X includes an acetal structure.

作為酸分解性基X,在本發明的效果更優異的觀點上,具有三級酯結構或縮醛結構者亦為較佳。As the acid-decomposable group X, those having a tertiary ester structure or an acetal structure are also preferable from the viewpoint of more excellent effects of the present invention.

(構成單元A1a) 聚合物A1包含具有上述酸分解性基X之構成單元A1a。 作為構成單元A1a,並不受特別限制,例如可以舉出下述式(A1a-1)~式(A1a-3)所表示之構成單元。 (Constituent unit A1a) Polymer A1 includes a structural unit A1a having the above-mentioned acid-decomposable group X. It does not specifically limit as structural unit A1a, For example, the structural unit represented by following formula (A1a-1) - a formula (A1a-3) is mentioned.

[化學式2]

Figure 02_image003
[chemical formula 2]
Figure 02_image003

式(A1a-1)~式(A1a-3)中,Ra及Rb各自獨立地表示氫原子或取代基。Ya表示上述式(Y1)~式(Y4)所表示之任一保護基。p表示0~4的整數。Xa表示氧原子或NRc。Rc表示氫原子或取代基。La表示單鍵或2價的連結基。In formula (A1a-1) to formula (A1a-3), Ra and Rb each independently represent a hydrogen atom or a substituent. Ya represents any one of the protecting groups represented by the above formula (Y1) to formula (Y4). p represents an integer of 0-4. Xa represents an oxygen atom or NRc. Rc represents a hydrogen atom or a substituent. La represents a single bond or a divalent linking group.

作為Ra所表示之取代基,例如可以舉出鹵素原子及烷基等。作為鹵素原子,可以舉出氟原子、氯原子、溴原子及碘原子等。又,作為烷基的碳數,1~12為較佳,1~6為更佳,1~3為進一步較佳。烷基可以為直鏈狀、支鏈狀及環狀中的任一種。又,烷基可以進一步具有取代基。作為取代基,例如可以舉出鹵素原子、羥基、碳數5以下的醯基及碳數5以下的烷氧基等。作為Ra,氫原子、甲基、三氟甲基或羥基甲基為較佳。As a substituent represented by Ra, a halogen atom, an alkyl group, etc. are mentioned, for example. Examples of the halogen atom include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom. Moreover, as carbon number of an alkyl group, 1-12 are preferable, 1-6 are more preferable, 1-3 are still more preferable. The alkyl group may be any of linear, branched and cyclic. Moreover, an alkyl group may further have a substituent. Examples of the substituent include a halogen atom, a hydroxyl group, an acyl group having 5 or less carbon atoms, an alkoxy group having 5 or less carbon atoms, and the like. As Ra, a hydrogen atom, a methyl group, a trifluoromethyl group or a hydroxymethyl group is preferable.

作為Rb所表示之取代基,並不受特別限制,例如可以舉出烷基(碳數1~4)、鹵素原子、羥基、烷氧基(碳數1~4)、羧基及烷氧基羰基(碳數2~6)等。The substituent represented by Rb is not particularly limited, and examples thereof include an alkyl group (1 to 4 carbons), a halogen atom, a hydroxyl group, an alkoxy group (1 to 4 carbons), a carboxyl group, and an alkoxycarbonyl group (carbon number 2-6), etc.

p為0~2為較佳,0或1為更佳,0為進一步較佳。p is preferably from 0 to 2, more preferably 0 or 1, and still more preferably 0.

作為Rc所表示之取代基,例如可以舉出碳數1~6的烷基(較佳為直鏈狀或支鏈狀)等。烷基可以進一步具有取代基。作為取代基,例如可以舉出鹵素原子、羥基、碳數5以下的醯基及碳數5以下的烷氧基等。作為Rc,氫原子、甲基或乙基為較佳。Examples of the substituent represented by Rc include alkyl groups having 1 to 6 carbon atoms (preferably linear or branched) and the like. An alkyl group may further have a substituent. Examples of the substituent include a halogen atom, a hydroxyl group, an acyl group having 5 or less carbon atoms, an alkoxy group having 5 or less carbon atoms, and the like. As Rc, a hydrogen atom, a methyl group or an ethyl group is preferable.

作為La所表示之2價的連結基,並不受特別限制,例如可以舉出-CO-、-O-、-SO-、-SO 2-、-NR A-、伸烷基(較佳為碳數1~6。可以為直鏈狀,亦可以為支鏈狀)、伸環烷基(較佳為碳數3~15)、伸芳基(6~10員環為較佳,6員環為進一步較佳。)及將該等中的複數個組合而成之2價的連結基。又,上述伸烷基、上述伸環烷基及伸芳基可以具有取代基。作為取代基,例如可以舉出鹵素原子(較佳為氟原子)及羥基等。作為R A,可以舉出氫原子或碳數1~6的烷基。 The divalent linking group represented by La is not particularly limited, for example -CO-, -O-, -SO-, -SO 2 -, -NR A -, alkylene (preferably The carbon number is 1-6. It can be straight chain or branched), cycloalkyl (preferably 3-15 carbon), aryl (preferably 6-10 membered ring, 6-membered A ring is further preferred.) and a divalent linking group formed by combining a plurality of these. In addition, the above-mentioned alkylene group, the above-mentioned cycloalkylene group, and arylylene group may have a substituent. As a substituent, a halogen atom (preferably a fluorine atom), a hydroxyl group, etc. are mentioned, for example. Examples of R A include a hydrogen atom or an alkyl group having 1 to 6 carbon atoms.

以下示出式(A1a-1)所表示之構成單元的具體例,但並不限於此。另外,Ra如已敘述。Although the specific example of the structural unit represented by Formula (A1a-1) is shown below, it is not limited to this. In addition, Ra is as described above.

[化學式3]

Figure 02_image005
[chemical formula 3]
Figure 02_image005

以下示出式(A1a-2)或式(A1a-3)所表示之構成單元的具體例,但並不限於此。另外,Ra如已敘述。Although the specific example of the structural unit represented by formula (A1a-2) or formula (A1a-3) is shown below, it is not limited to this. In addition, Ra is as described above.

[化學式4]

Figure 02_image007
[chemical formula 4]
Figure 02_image007

聚合物A1可以包含一種構成單元A1a,亦可以包含兩種以上。 在聚合物A1中,構成單元A1a的含量(當包含複數種時為其合計含量)相對於聚合物A1的所有構成單元為1~70質量%為較佳,5~60質量%為更佳,5~40質量%為進一步較佳。 Polymer A1 may contain one kind of structural unit A1a, or may contain two or more kinds. In the polymer A1, the content of the structural unit A1a (total content when plural types are included) is preferably 1 to 70% by mass, more preferably 5 to 60% by mass, relative to all the structural units of the polymer A1, 5-40 mass % is still more preferable.

(構成單元A1b) 聚合物A1包含具有羧基之構成單元A1b。另外,構成單元A1b不包含上述酸分解性基X。 作為形成構成單元A1b之單體,只要為在分子中具有羧基之單體,則不受特別限制。作為上述單體,例如可以舉出(甲基)丙烯酸、反丁烯二酸、桂皮酸、巴豆酸、衣康酸及4-乙烯基苯甲酸等,其中(甲基)丙烯酸為較佳。 (Constituent unit A1b) Polymer A1 contains structural unit A1b having a carboxyl group. In addition, the structural unit A1b does not contain the above-mentioned acid decomposable group X. The monomer forming the constituent unit A1b is not particularly limited as long as it has a carboxyl group in the molecule. Examples of the aforementioned monomers include (meth)acrylic acid, fumaric acid, cinnamic acid, crotonic acid, itaconic acid, and 4-vinylbenzoic acid, among which (meth)acrylic acid is preferred.

聚合物A1可以包含一種構成單元A1b,亦可以包含兩種以上。 在聚合物A1中,構成單元A1b的含量(當包含複數種時為其合計含量)相對於聚合物A1的所有構成單元為5~50質量%為較佳,10~40質量%為更佳,10~30質量%為進一步較佳。 Polymer A1 may contain one type of structural unit A1b, or may contain two or more types. In the polymer A1, the content of the structural unit A1b (total content when plural types are included) is preferably 5 to 50% by mass, more preferably 10 to 40% by mass, relative to all the structural units of the polymer A1, 10-30 mass % is still more preferable.

(其他構成單元) 聚合物A1可以包含除上述構成單元A1a及構成單元A1b以外的其他構成單元。 (other constituent units) Polymer A1 may contain other structural units other than the aforementioned structural unit A1a and structural unit A1b.

從抑制曝光時焦點位置產生偏移時的線寬粗細及解析度的惡化之觀點而言,聚合物A1包含來自於具有芳香族烴基之單體之構成單元為較佳。另外,來自於具有芳香族烴基之單體之構成單元不包括上述構成單元A1a及構成單元A1b。 作為上述芳香族烴基,例如可以舉出可以具有取代基之苯基及可以具有取代基之芳烷基。 來自於具有芳香族烴基之單體之構成單元的含量相對於聚合物A1的所有構成單元為10質量%以上為較佳,20質量%以上為更佳,25質量%以上為進一步較佳。上限相對於聚合物A1的所有構成單元為80質量%以下為較佳,60質量%以下為更佳,55質量%以下為進一步較佳。當感光性組成物包含複數種聚合物A1時,來自於具有芳香族烴基之單體之構成單元的含量的質量平均值在上述範圍內為較佳。 It is preferable that polymer A1 contains a structural unit derived from a monomer having an aromatic hydrocarbon group from the viewpoint of suppressing deterioration of line width and resolution when the focal position shifts during exposure. In addition, the structural unit derived from a monomer having an aromatic hydrocarbon group does not include the above-mentioned structural unit A1a and structural unit A1b. As said aromatic hydrocarbon group, the phenyl group which may have a substituent, and the aralkyl group which may have a substituent are mentioned, for example. The content of the structural unit derived from a monomer having an aromatic hydrocarbon group is preferably at least 10% by mass, more preferably at least 20% by mass, and still more preferably at least 25% by mass, based on all the structural units of the polymer A1. The upper limit is preferably 80% by mass or less, more preferably 60% by mass or less, and still more preferably 55% by mass or less with respect to all the constituent units of the polymer A1. When the photosensitive composition contains a plurality of polymers A1, it is preferable that the mass average value of the content of the constituent unit derived from the monomer having an aromatic hydrocarbon group is within the above-mentioned range.

作為具有芳香族烴基之單體,例如可以舉出具有芳烷基之單體、苯乙烯及能夠聚合之苯乙烯衍生物(例如,甲基苯乙烯、乙烯基甲苯、三級丁氧基苯乙烯、乙醯氧基苯乙烯、苯乙烯二聚物及苯乙烯三聚物等),具有芳烷基之單體或苯乙烯為較佳,苯乙烯為更佳。 當具有芳香族烴基之單體為苯乙烯時,來自於苯乙烯之構成單元的含量相對於聚合物A1的所有構成單元為10~80質量%為較佳,20~60質量%為更佳,25~55質量%為進一步較佳。當感光性組成物包含複數種聚合物A1時,來自於具有芳香族烴基之單體之構成單元的含量的質量平均值在上述範圍內為較佳。 As monomers having an aromatic hydrocarbon group, for example, monomers having an aralkyl group, styrene and polymerizable styrene derivatives (for example, methylstyrene, vinyltoluene, tertiary butoxystyrene , Acetyloxystyrene, styrene dimer and styrene trimer, etc.), monomers with aralkyl groups or styrene are preferred, and styrene is more preferred. When the monomer having an aromatic hydrocarbon group is styrene, the content of the structural units derived from styrene is preferably 10 to 80% by mass, more preferably 20 to 60% by mass, relative to all the structural units of the polymer A1, 25-55 mass % is still more preferable. When the photosensitive composition contains a plurality of polymers A1, it is preferable that the mass average value of the content of the constituent unit derived from the monomer having an aromatic hydrocarbon group is within the above-mentioned range.

作為芳烷基,例如可以舉出可以具有取代基之苯基烷基(但是,苄基除外)及可以具有取代基之苄基,可以具有取代基之苄基為較佳。Examples of the aralkyl group include a phenylalkyl group which may have a substituent (except for a benzyl group) and a benzyl group which may have a substituent, and a benzyl group which may have a substituent is preferable.

作為具有苯基烷基之單體,例如可以舉出(甲基)丙烯酸苯基乙酯。As a monomer which has a phenylalkyl group, phenyl ethyl (meth)acrylate is mentioned, for example.

作為具有苄基之單體,例如可以舉出(甲基)丙烯酸苄酯及(甲基)丙烯酸氯苄酯等具有苄基之(甲基)丙烯酸酯;乙烯基苄基氯及乙烯基苄醇等具有苄基之乙烯基單體,具有苄基之(甲基)丙烯酸酯為較佳,(甲基)丙烯酸苄酯為更佳。 當具有芳香族烴基之單體為(甲基)丙烯酸苄酯時,來自於(甲基)丙烯酸苄酯之構成單元的含量相對於聚合物A1的所有構成單元為10~90質量%為較佳,20~80質量%為更佳,30~70質量%為進一步較佳。 Examples of monomers having a benzyl group include (meth)acrylates having a benzyl group such as benzyl (meth)acrylate and benzyl chloride (meth)acrylate; vinylbenzyl chloride and vinylbenzyl alcohol Among vinyl monomers having a benzyl group, benzyl (meth)acrylate is preferred, and benzyl (meth)acrylate is more preferred. When the monomer having an aromatic hydrocarbon group is benzyl (meth)acrylate, the content of constituent units derived from benzyl (meth)acrylate is preferably 10 to 90% by mass relative to all constituent units of polymer A1 , 20-80 mass % is more preferable, and 30-70 mass % is still more preferable.

聚合物A1包含來自於非酸性且在分子中具有聚合性基之單體之構成單元為較佳。另外,聚合性基的含義與後述之聚合性化合物B所具有之聚合性基相同,較佳態樣亦相同。 作為上述單體,例如可以舉出(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸正丙酯、(甲基)丙烯酸異丙酯、(甲基)丙烯酸正丁酯、(甲基)丙烯酸異丁酯、(甲基)丙烯酸三級丁酯、(甲基)丙烯酸2-羥基乙酯、(甲基)丙烯酸2-羥基丙酯、(甲基)丙烯酸環己酯、(甲基)丙烯酸2-乙基己酯等(甲基)丙烯酸酯類;乙酸乙烯酯等乙烯醇的酯類;(甲基)丙烯腈。 其中,(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸2-乙基己酯或(甲基)丙烯酸正丁酯為較佳,(甲基)丙烯酸甲酯或(甲基)丙烯酸乙酯為更佳。 來自於上述單體之構成單元的含量相對於聚合物A1的所有構成單元為1~80質量%為較佳,1~60質量%為更佳,1~50質量%為進一步較佳。 Polymer A1 preferably contains a constituent unit derived from a non-acidic monomer having a polymerizable group in the molecule. In addition, the meaning of a polymeric group is the same as the polymeric group which the polymeric compound B mentioned later has, and a preferable aspect is also the same. Examples of the aforementioned monomers include methyl (meth)acrylate, ethyl (meth)acrylate, n-propyl (meth)acrylate, isopropyl (meth)acrylate, n-butyl (meth)acrylate ester, isobutyl (meth)acrylate, tertiary butyl (meth)acrylate, 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, cyclohexyl (meth)acrylate (meth)acrylic acid esters such as esters, 2-ethylhexyl (meth)acrylate; esters of vinyl alcohol such as vinyl acetate; (meth)acrylonitrile. Among them, methyl (meth)acrylate, ethyl (meth)acrylate, 2-ethylhexyl (meth)acrylate or n-butyl (meth)acrylate are preferred, methyl (meth)acrylate or Ethyl (meth)acrylate is more preferred. The content of the structural units derived from the above monomers is preferably from 1 to 80% by mass, more preferably from 1 to 60% by mass, and still more preferably from 1 to 50% by mass, based on all the structural units of the polymer A1.

聚合物A1可以在側鏈中具有直鏈結構、分支結構及脂環結構中的任一種。 藉由使用包含在側鏈中具有分支結構之基之單體或包含在側鏈中具有脂環結構之基之單體,能夠將分支結構或脂環結構導入到聚合物A1的側鏈中。具有脂環結構之基可以為單環及多環中的任一種。 “側鏈”係指從主鏈分支之原子團。“主鏈”係指在構成樹脂之高分子化合物的分子中相對最長的鍵結鏈。 作為包含在側鏈中具有分支結構之基之單體,例如可以舉出(甲基)丙烯酸異丙酯、(甲基)丙烯酸異丁酯、(甲基)丙烯酸二級丁酯、(甲基)丙烯酸三級丁酯、(甲基)丙烯酸異戊酯、(甲基)丙烯酸三級戊酯、(甲基)丙烯酸二級戊酯、(甲基)丙烯酸2-辛酯、(甲基)丙烯酸3-辛酯及(甲基)丙烯酸三級辛酯。 其中,(甲基)丙烯酸異丙酯、(甲基)丙烯酸異丁酯或甲基丙烯酸三級丁酯為較佳,甲基丙烯酸異丙酯或甲基丙烯酸三級丁酯為更佳。 作為包含在側鏈中具有脂環結構之基之單體,例如可以舉出具有單環的脂肪族烴基之單體及具有多環的脂肪族烴基之單體。又,可以舉出具有碳數5~20的脂環式烴基之(甲基)丙烯酸酯。 具體而言,可以舉出(甲基)丙烯酸(雙環〔2.2.1〕庚基-2)酯、(甲基)丙烯酸-1-金剛烷基酯、(甲基)丙烯酸-2-金剛烷基酯、(甲基)丙烯酸-3-甲基-1-金剛烷基酯、(甲基)丙烯酸-3,5-二甲基-1-金剛烷基酯、(甲基)丙烯酸-3-乙基金剛烷基酯、(甲基)丙烯酸-3-甲基-5-乙基-1-金剛烷基酯、(甲基)丙烯酸-3,5,8-三乙基-1-金剛烷基酯、(甲基)丙烯酸-3,5-二甲基-8-乙基-1-金剛烷基酯、(甲基)丙烯酸2-甲基-2-金剛烷基酯、(甲基)丙烯酸2-乙基-2-金剛烷基酯、(甲基)丙烯酸3-羥基-1-金剛烷基酯、(甲基)丙烯酸八氫-4,7-甲橋茚(methanoinden)-5-基酯、(甲基)丙烯酸八氫-4,7-甲橋茚-1-基甲酯、(甲基)丙烯酸-1-薄荷腦基酯、(甲基)丙烯酸三環癸烷、(甲基)丙烯酸-3-羥基-2,6,6-三甲基-雙環〔3.1.1〕庚酯、(甲基)丙烯酸-3,7,7-三甲基-4-羥基-雙環〔4.1.0〕庚酯、(甲基)丙烯酸(降)莰基酯、(甲基)丙烯酸異莰基酯、(甲基)丙烯酸葑酯、(甲基)丙烯酸-2,2,5-三甲基環己酯及(甲基)丙烯酸環己酯。 其中,(甲基)丙烯酸環己酯、(甲基)丙烯酸(降)莰基酯、(甲基)丙烯酸異莰基酯、(甲基)丙烯酸-1-金剛烷基酯、(甲基)丙烯酸-2-金剛烷基酯、(甲基)丙烯酸葑酯、(甲基)丙烯酸-1-薄荷腦基酯或(甲基)丙烯酸三環癸烷為較佳,(甲基)丙烯酸環己酯、(甲基)丙烯酸(降)莰基酯、(甲基)丙烯酸異莰基酯、(甲基)丙烯酸-2-金剛烷基酯或(甲基)丙烯酸三環癸烷為更佳。 Polymer A1 may have any of a linear structure, a branched structure, and an alicyclic structure in a side chain. By using a monomer containing a group having a branched structure in the side chain or a monomer containing a group having an alicyclic structure in the side chain, a branched structure or an alicyclic structure can be introduced into the side chain of the polymer A1. The group having an alicyclic structure may be either monocyclic or polycyclic. "Side chain" refers to a group of atoms branching from the main chain. "Main chain" refers to the relatively longest bonded chain in the molecules of the polymer compound constituting the resin. Examples of monomers containing a group having a branched structure in the side chain include isopropyl (meth)acrylate, isobutyl (meth)acrylate, secondary butyl (meth)acrylate, (meth)acrylate ) tertiary butyl acrylate, isopentyl (meth) acrylate, tertiary pentyl (meth) acrylate, secondary pentyl (meth) acrylate, 2-octyl (meth) acrylate, (meth) 3-octyl acrylate and tertiary octyl (meth)acrylate. Among them, isopropyl (meth)acrylate, isobutyl (meth)acrylate or tertiary butyl methacrylate is preferred, and isopropyl methacrylate or tertiary butyl methacrylate is more preferred. As a monomer containing the group which has an alicyclic structure in a side chain, the monomer which has a monocyclic aliphatic hydrocarbon group, and the monomer which has a polycyclic aliphatic hydrocarbon group are mentioned, for example. Moreover, (meth)acrylate which has an alicyclic hydrocarbon group with 5-20 carbon atoms is mentioned. Specifically, (meth)acrylate (bicyclo[2.2.1]heptyl-2), (meth)acrylate-1-adamantyl, (meth)acrylate-2-adamantyl Esters, 3-methyl-1-adamantyl (meth)acrylate, 3,5-dimethyl-1-adamantyl (meth)acrylate, 3-ethyl (meth)acrylate Adamantyl ester, 3-methyl-5-ethyl-1-adamantyl (meth)acrylate, 3,5,8-triethyl-1-adamantyl (meth)acrylate ester, 3,5-dimethyl-8-ethyl-1-adamantyl (meth)acrylate, 2-methyl-2-adamantyl (meth)acrylate, (meth)acrylic acid 2-Ethyl-2-adamantyl ester, 3-hydroxy-1-adamantyl (meth)acrylate, octahydro-4,7-methanoinden-5-yl (meth)acrylate ester, octahydro-4,7-inden-1-ylmethyl (meth)acrylate, 1-menthol (meth)acrylate, tricyclodecane (meth)acrylate, (methyl ) Acrylic acid-3-hydroxy-2,6,6-trimethyl-bicyclo[3.1.1]heptyl ester, (meth)acrylic acid-3,7,7-trimethyl-4-hydroxy-bicyclo[4.1. 0) Heptyl ester, (nor)bornyl (meth)acrylate, isobornyl (meth)acrylate, fecundyl (meth)acrylate, 2,2,5-trimethyl (meth)acrylate Cyclohexyl and cyclohexyl (meth)acrylate. Among them, cyclohexyl (meth)acrylate, (nor)bornyl (meth)acrylate, isobornyl (meth)acrylate, 1-adamantyl (meth)acrylate, (meth) 2-adamantyl acrylate, fenzyl (meth)acrylate, 1-menthol (meth)acrylate or tricyclodecane (meth)acrylate are preferred, cyclohexyl (meth)acrylate (meth)acrylate, (nor)bornyl (meth)acrylate, isobornyl (meth)acrylate, 2-adamantyl (meth)acrylate, or tricyclodecane (meth)acrylate are more preferable.

作為聚合物A1的較佳的一態樣,可以舉出具有聚合性基之態樣。作為這種聚合物A1,包含具有聚合性基之構成單元為較佳,包含在側鏈中具有乙烯性不飽和基之構成單元為更佳。 作為聚合性基,可以舉出後述之聚合性化合物B所具有之聚合性基,乙烯性不飽和基為較佳,丙烯醯基或甲基丙烯醯基為更佳。 又,聚合性基為能夠與聚合性化合物B的聚合性基進行聚合反應之聚合性基亦為較佳。 As a preferable aspect of polymer A1, the aspect which has a polymeric group is mentioned. Such polymer A1 preferably includes a structural unit having a polymerizable group, and more preferably includes a structural unit having an ethylenically unsaturated group in a side chain. Examples of the polymerizable group include those possessed by the polymerizable compound B described later, preferably an ethylenically unsaturated group, and more preferably an acryl group or a methacryl group. Furthermore, it is also preferable that the polymerizable group is a polymerizable group capable of a polymerization reaction with the polymerizable group of the polymerizable compound B.

包含具有聚合性基之構成單元之聚合物A1藉由使構成單元A1b或包含羥基之聚合物與下述單體(以下,亦稱為“單體X”。)進行反應而得到為較佳。Polymer A1 containing a structural unit having a polymerizable group is preferably obtained by reacting a structural unit A1b or a hydroxyl group-containing polymer with the following monomer (hereinafter also referred to as "monomer X").

單體X為在分子中具有2個以上的聚合性基之單體,在分子中具有2個聚合性基之單體為更佳。 作為聚合性基,例如可以舉出後述之聚合性化合物B所具有之聚合性基。其中,單體X具有兩種聚合性基為較佳,具有乙烯性不飽和基和陽離子性聚合性基為更佳,具有丙烯醯基或甲基丙烯醯基和環氧基為進一步較佳。 The monomer X is a monomer having two or more polymerizable groups in the molecule, more preferably a monomer having two polymerizable groups in the molecule. As a polymeric group, the polymeric group which the polymeric compound B mentioned later has is mentioned, for example. Among them, the monomer X preferably has two kinds of polymerizable groups, more preferably has an ethylenically unsaturated group and a cationic polymerizable group, and is still more preferably has an acryl group or a methacryl group and an epoxy group.

作為單體X,例如可以舉出(甲基)丙烯酸縮水甘油酯及(甲基)丙烯酸烯丙酯等。Examples of the monomer X include glycidyl (meth)acrylate, allyl (meth)acrylate, and the like.

作為具有聚合性基之構成單元,式(P)所表示之構成單元為較佳。As a structural unit having a polymerizable group, a structural unit represented by formula (P) is preferable.

[化學式5]

Figure 02_image009
[chemical formula 5]
Figure 02_image009

式(P)中,R P表示氫原子或甲基。L P表示2價的連結基。P表示聚合性基。 In the formula (P), R P represents a hydrogen atom or a methyl group. LP represents a divalent linking group. P represents a polymerizable group.

R P表示氫原子或甲基。 作為R P,氫原子為較佳。 R P represents a hydrogen atom or a methyl group. As R P , a hydrogen atom is preferable.

L P表示2價的連結基。 作為上述2價的連結基,例如可以舉出-CO-、-O-、-S-、-SO-、-SO 2-、-NR N-、烴基及將該等組合而成之基。R N表示氫原子或取代基。 作為上述烴基,例如可以舉出伸烷基、伸環烷基及伸芳基。 上述伸烷基可以為直鏈狀及支鏈狀中的任一種。上述伸烷基的碳數為1~10為較佳,2~8為更佳,3~5為進一步較佳。上述伸烷基可以具有雜原子,上述伸烷基中的亞甲基可以被雜原子取代。作為上述雜原子,氧原子、硫原子或氮原子為較佳,氧原子為更佳。 上述伸環烷基可以為單環及多環中的任一種。上述伸環烷基的碳數為3~20為較佳,5~10為更佳,6~8為進一步較佳。 上述伸芳基可以為單環及多環中的任一種。上述伸芳基的碳數為6~20為較佳,6~15為更佳,6~10為進一步較佳。作為上述伸芳基,伸苯基為較佳。 上述伸環烷基及上述伸芳基可以具有雜原子作為環員原子。作為上述雜原子,氧原子、硫原子或氮原子為較佳,氧原子為更佳。 上述烴基可以進一步具有取代基。 作為上述取代基,例如可以舉出鹵素原子(例如,氟原子等)、羥基、硝基、氰基、烷基、烷氧基、烷氧基羰基及烯基,羥基為較佳。 作為L P,可以具有雜原子之伸烷基為較佳。 LP represents a divalent linking group. Examples of the divalent linking group include -CO-, -O-, -S-, -SO-, -SO 2 -, -NR N -, hydrocarbon groups, and combinations thereof. R N represents a hydrogen atom or a substituent. As said hydrocarbon group, an alkylene group, a cycloalkylene group, and an arylylene group are mentioned, for example. The above-mentioned alkylene group may be either linear or branched. The number of carbon atoms in the alkylene group is preferably 1-10, more preferably 2-8, and still more preferably 3-5. The above-mentioned alkylene group may have a heteroatom, and the methylene group in the above-mentioned alkylene group may be substituted with a heteroatom. As the above-mentioned hetero atom, an oxygen atom, a sulfur atom or a nitrogen atom is preferable, and an oxygen atom is more preferable. The above-mentioned cycloalkylene group may be either monocyclic or polycyclic. The number of carbon atoms in the cycloalkylene group is preferably from 3 to 20, more preferably from 5 to 10, and still more preferably from 6 to 8. The aforementioned aryl group may be either monocyclic or polycyclic. The number of carbon atoms in the arylylene group is preferably from 6 to 20, more preferably from 6 to 15, and still more preferably from 6 to 10. A phenylene group is preferable as the above-mentioned arylylene group. The above-mentioned cycloalkylene group and the above-mentioned arylylene group may have a hetero atom as a ring member atom. As the above-mentioned hetero atom, an oxygen atom, a sulfur atom or a nitrogen atom is preferable, and an oxygen atom is more preferable. The above-mentioned hydrocarbon group may further have a substituent. Examples of the above-mentioned substituents include halogen atoms (for example, fluorine atoms, etc.), hydroxyl groups, nitro groups, cyano groups, alkyl groups, alkoxy groups, alkoxycarbonyl groups, and alkenyl groups, with hydroxyl groups being preferred. As L P , an alkylene group which may have a heteroatom is preferable.

P表示聚合性基。 上述聚合性基如上所述。 P represents a polymerizable group. The aforementioned polymerizable group is as described above.

作為具有聚合性基之構成單元,例如可以舉出以下的構成單元。另外,下述式中,Rx及Ry各自獨立地表示氫原子或甲基。As a structural unit which has a polymeric group, the following structural units are mentioned, for example. In addition, in the following formulae, Rx and Ry each independently represent a hydrogen atom or a methyl group.

[化學式6]

Figure 02_image011
[chemical formula 6]
Figure 02_image011

當聚合物A1包含具有聚合性基之構成單元時,具有聚合性基之構成單元的含量相對於聚合物A1的所有構成單元為5~70質量%為較佳,10~50質量%為更佳,15~40質量%為進一步較佳。When the polymer A1 contains a structural unit having a polymerizable group, the content of the structural unit having a polymeric group is preferably 5 to 70% by mass, more preferably 10 to 50% by mass, relative to all the structural units of the polymer A1. , 15 to 40% by mass is still more preferable.

作為將聚合性基導入到聚合物A1中之方法,例如可以舉出使環氧化合物、封端異氰酸酯化合物、異氰酸酯化合物、乙烯基碸化合物、醛化合物、羥甲基化合物及羧酸酐與聚合物A1所具有之羧基以及可以任意包含之羥基、羧基、一級胺基、二級胺基、乙醯乙醯基(acetoacetyl group)及磺基等基進行反應之方法。 作為將聚合性基導入到聚合物A1中之方法的較佳態樣,例如可以舉出如下方法:藉由聚合反應合成包含構成單元A1a及構成單元A1b之聚合物A1之後,使單體X((甲基)丙烯酸縮水甘油酯等具有環氧基之(甲基)丙烯酸酯)與所得到之聚合物A1的構成單元A1b的羧基的一部分進行高分子反應而將聚合性基(較佳為(甲基)丙烯醯氧基)導入到聚合物A1中。作為另一種方法,可以舉出如下方法:藉由聚合反應合成具有構成單元A1a、構成單元A1b及羥基之聚合物之後,藉由高分子反應,使具有異氰酸酯基之(甲基)丙烯酸酯與所得到之聚合物的羥基的一部分進行反應而將(甲基)丙烯醯氧基導入到聚合物中。上述高分子反應的反應溫度為80~110℃為較佳。上述高分子反應中使用觸媒為較佳,使用銨鹽(溴化四乙銨)為更佳。 上述聚合反應的反應溫度為70~100℃為較佳,80~90℃為更佳。上述聚合反應中使用聚合起始劑為較佳,作為聚合起始劑,使用偶氮系起始劑為更佳,作為聚合起始劑,V-601(FUJIFILM Wako Pure Chemical Corporation製造)或V-65(FUJIFILM Wako Pure Chemical Corporation製造)為進一步較佳。 As a method for introducing a polymerizable group into polymer A1, for example, an epoxy compound, a blocked isocyanate compound, an isocyanate compound, a vinylidene compound, an aldehyde compound, a methylol compound, and a carboxylic acid anhydride are mixed with polymer A1. The method of reacting the carboxyl group and the optionally included hydroxyl group, carboxyl group, primary amino group, secondary amino group, acetoacetyl group and sulfo group. As a preferable aspect of the method of introducing a polymerizable group into polymer A1, for example, the following method can be mentioned: After polymer A1 including constituent unit A1a and constituent unit A1b is synthesized by polymerization reaction, monomer X ( A (meth)acrylate having an epoxy group such as glycidyl (meth)acrylate) reacts with a part of the carboxyl group of the constituent unit A1b of the obtained polymer A1 to polymerize the polymerizable group (preferably ( meth)acryloxy) was introduced into polymer A1. As another method, the following method can be mentioned: After synthesizing the polymer having the structural unit A1a, the structural unit A1b and the hydroxyl group by polymerization reaction, the (meth)acrylic acid ester having the isocyanate group and the polymer reaction are used. A part of the hydroxyl groups of the obtained polymer is reacted to introduce (meth)acryloyloxy groups into the polymer. The reaction temperature of the above polymer reaction is preferably 80-110°C. It is better to use a catalyst in the above polymer reaction, and it is more preferable to use an ammonium salt (tetraethylammonium bromide). The reaction temperature of the above polymerization reaction is preferably 70-100°C, more preferably 80-90°C. It is better to use a polymerization initiator in the above-mentioned polymerization reaction. As a polymerization initiator, it is more preferable to use an azo initiator. As a polymerization initiator, V-601 (manufactured by FUJIFILM Wako Pure Chemical Corporation) or V- 65 (manufactured by FUJIFILM Wako Pure Chemical Corporation) is further preferred.

作為聚合物A1的較佳態樣的一例,可以舉出包含構成單元A1a、構成單元A1b、來自於苯乙烯之構成單元或來自於甲基丙烯酸苄酯之構成單元及來自於甲基丙烯酸甲酯之構成單元之聚合物。 又,作為聚合物A1的較佳態樣的另一例,可以舉出包含構成單元A1a、構成單元A1b、來自於苯乙烯之構成單元或來自於甲基丙烯酸苄酯之構成單元、來自於包含在側鏈中具有分支結構之基之單體或包含在側鏈中具有脂環結構之基之單體之構成單元之聚合物。 又,作為聚合物A1的較佳態樣的另一例,可以舉出包含構成單元A1a、構成單元A1b、來自於苯乙烯之構成單元或來自於甲基丙烯酸苄酯之構成單元及具有聚合性基之構成單元之聚合物。 又,作為聚合物A1的較佳態樣的另一例,可以舉出由構成單元A1a和構成單元A1b這兩種構成之聚合物。 As an example of a preferable aspect of the polymer A1, a structural unit derived from a structural unit A1a, a structural unit A1b, a structural unit derived from styrene, a structural unit derived from benzyl methacrylate, and a polymer derived from methyl methacrylate can be mentioned. A polymer of constituent units. In addition, as another example of a preferable aspect of the polymer A1, there can be mentioned the constituent units including the constituent unit A1a, the constituent unit A1b, the constituent unit derived from styrene, or the constituent unit derived from benzyl methacrylate, the constituent unit derived from the A polymer comprising a monomer having a branched structure group in the side chain or a monomer having an alicyclic structure group in the side chain. In addition, as another example of a preferable aspect of the polymer A1, there may be mentioned polymeric polymers containing a structural unit A1a, a structural unit A1b, a structural unit derived from styrene, or a structural unit derived from benzyl methacrylate, and having a polymerizable group. A polymer of constituent units. Moreover, as another example of a preferable aspect of polymer A1, the polymer which consists of two types of structural unit A1a and structural unit A1b is mentioned.

聚合物A1的Tg為30~180℃為較佳,40~150℃為更佳,50~120℃為進一步較佳。The Tg of the polymer A1 is preferably from 30 to 180°C, more preferably from 40 to 150°C, and still more preferably from 50 to 120°C.

從本發明的效果更優異的觀點而言,聚合物A1的酸值為220mgKOH/g以下為較佳,200mgKOH/g以下為更佳,190mgKOH/g以下為進一步較佳,170mgKOH/g以下為特佳,150mgKOH/g以下為最佳。從本發明的效果更優異的觀點而言,下限為10mgKOH/g以上為較佳,50mgKOH/g以上為更佳,80mgKOH/g以上為進一步較佳,90mgKOH/g以上為特佳。From the viewpoint of more excellent effects of the present invention, the acid value of polymer A1 is preferably 220 mgKOH/g or less, more preferably 200 mgKOH/g or less, still more preferably 190 mgKOH/g or less, and especially 170 mgKOH/g or less. Good, below 150mgKOH/g is the best. From the standpoint of more excellent effects of the present invention, the lower limit is preferably 10 mgKOH/g or more, more preferably 50 mgKOH/g or more, still more preferably 80 mgKOH/g or more, and particularly preferably 90 mgKOH/g or more.

聚合物A1的酸值由聚合物A1的合成時的裝入值進行計算。另外,以下將具有酸基之構成單元亦稱為“構成單元Ac”。 當聚合物A1中的構成單元Ac僅為一種時,由數式(1)進行計算,當聚合物A1中的構成單元Ac為兩種以上時,按各構成單元Ac依據數式(1)計算酸值並求出其合計值。 數式(1):{(構成單元Ac的原料單體相對於所有原料單體之裝入比(質量%))/(構成單元Ac的原料單體的分子量)}×10×56.1 聚合物的酸值能夠利用聚合物所具有之構成單元的種類及/或包含酸基之構成單元的含量進行調整。 The acid value of polymer A1 was calculated from the charge value at the time of synthesis of polymer A1. In addition, the structural unit which has an acidic group is also called "structural unit Ac" below. When there is only one kind of structural unit Ac in polymer A1, calculate it by formula (1); when there are two or more structural units Ac in polymer A1, calculate according to formula (1) for each structural unit Ac Acid value and calculate its total value. Equation (1): {(the charge ratio of raw material monomers constituting unit Ac to all raw material monomers (mass %))/(molecular weight of raw material monomers constituting unit Ac)}×10×56.1 The acid value of a polymer can be adjusted by the kind of structural unit which a polymer has, and/or content of the structural unit containing an acid group.

當感光性組成物包含兩種以上的聚合物A1時,滿足上述酸值的範圍之聚合物A1的含量相對於所有聚合物A1的含量為10~100質量%為較佳,60~100質量%為更佳,90~100質量%為進一步較佳。When the photosensitive composition contains two or more polymers A1, the content of the polymer A1 satisfying the range of the above-mentioned acid value is preferably 10-100% by mass, 60-100% by mass relative to the total content of the polymer A1 It is more preferable, and 90-100 mass % is more preferable.

從本發明的效果更優異的觀點而言,聚合物A1的來自於羧基之酸值為220mgKOH/g以下為較佳,200mgKOH/g以下為更佳,190mgKOH/g以下為進一步較佳,170mgKOH/g以下為特佳,150mgKOH/g以下為最佳。從本發明的效果更優異的觀點而言,下限為10mgKOH/g以上為較佳,50mgKOH/g以上為更佳,80mgKOH/g以上為進一步較佳,90mgKOH/g以上為特佳。 聚合物A1的來自於羧基之酸值能夠由上述數式(1)中將“構成單元Ac”替換為“具有羧基之構成單元”之數式算出。 From the standpoint of more excellent effects of the present invention, the acid value derived from the carboxyl group of polymer A1 is preferably 220 mgKOH/g or less, more preferably 200 mgKOH/g or less, more preferably 190 mgKOH/g or less, and 170 mgKOH/g or less. It is especially good if it is less than g, and the best is less than 150mgKOH/g. From the standpoint of more excellent effects of the present invention, the lower limit is preferably 10 mgKOH/g or more, more preferably 50 mgKOH/g or more, still more preferably 80 mgKOH/g or more, and particularly preferably 90 mgKOH/g or more. The acid value derived from the carboxyl group of the polymer A1 can be calculated from the formula in which "constituent unit Ac" is replaced with "constituent unit having a carboxyl group" in the above formula (1).

又,在本發明的效果更優異的觀點上,聚合物A1的來自於羧基之酸值與來自於構成單元A1a中的酸分解性基X藉由酸的作用全部分解時由酸分解性基X生成之酸基之酸值的合計值例如為265mgKOH/g以下,從本發明的效果更優異的觀點而言,230mgKOH/g以下為較佳,220mgKOH/g以下為更佳,200mgKOH/g以下為進一步較佳。從本發明的效果更優異的觀點而言,下限為90mgKOH/g以上為較佳,100mgKOH/g以上為更佳,110mgKOH/g以上為進一步較佳,120mgKOH/g以上為特佳。 來自於構成單元A1a中的酸分解性基X藉由酸的作用全部分解時由酸分解性基X生成之酸基之酸值由聚合物A1的合成時的裝入值進行計算。 當聚合物A1中的構成單元A1a僅為一種時,由數式(2)計算,當聚合物A1中的構成單元A1a為兩種以上時,按各構成單元A1a依據數式(2)計算來自於酸分解性基X藉由酸的作用全部分解時由酸分解性基X生成之酸基之酸值並求出其合計值。 數式(2):{(構成單元A1a的原料單體相對於所有原料單體之裝入比(質量%))/(構成單元A1a的原料單體的分子量)}×10×56.1 In addition, from the viewpoint that the effect of the present invention is more excellent, when the acid value derived from the carboxyl group of the polymer A1 and the acid decomposable group X derived from the structural unit A1a are all decomposed by the action of an acid, the acid value decomposable group X The total value of the acid value of the generated acid groups is, for example, 265 mgKOH/g or less, preferably 230 mgKOH/g or less, more preferably 220 mgKOH/g or less, and 200 mgKOH/g or less from the viewpoint of more excellent effects of the present invention. Further better. From the standpoint of more excellent effects of the present invention, the lower limit is preferably 90 mgKOH/g or more, more preferably 100 mgKOH/g or more, still more preferably 110 mgKOH/g or more, and particularly preferably 120 mgKOH/g or more. The acid value of the acid group generated from the acid decomposable group X when the acid decomposable group X in the constituent unit A1a is completely decomposed by the action of an acid is calculated from the loaded value at the time of synthesis of the polymer A1. When there is only one kind of constituent unit A1a in polymer A1, it can be calculated by formula (2); when there are more than two kinds of constituent units A1a in polymer A1, it can be calculated according to formula (2) for each constituent unit A1a. When the acid decomposable group X is completely decomposed by the action of acid, the acid value of the acid group generated from the acid decomposable group X is calculated and the total value thereof is obtained. Equation (2): {(the charge ratio of raw material monomers constituting unit A1a to all raw material monomers (mass %))/(molecular weight of raw material monomers constituting unit A1a)}×10×56.1

又,在本發明的效果更優異的觀點上,聚合物A1的來自於構成單元A1a中的酸分解性基X藉由酸的作用全部分解時由酸分解性基X生成之酸基之酸值例如為15~170mgKOH/g為較佳,15~130mgKOH/g為更佳。In addition, from the viewpoint of more excellent effects of the present invention, the acid value of the polymer A1 derived from the acid group generated from the acid decomposable group X when all the acid decomposable groups X in the constituent unit A1a are decomposed by the action of an acid For example, it is preferably 15 to 170 mgKOH/g, more preferably 15 to 130 mgKOH/g.

作為聚合物A1的重量平均分子量,500,000以下為較佳,100,000以下為更佳,50,000以下為進一步較佳。作為聚合物A1的重量平均分子量,3,000以上為較佳,4,000以上為更佳,5,000以上為進一步較佳,10,000以上為特佳。 當重量平均分子量為500,000以下時,能夠提高解析性及顯影性。又,當重量平均分子量為3,000以上時,能夠控制顯影凝聚物的性狀以及轉印膜的邊緣熔融性及切屑性等未曝光膜的性狀。“邊緣熔融性”係指將轉印膜捲取為卷狀時感光性組成物層從卷的端面溢出之容易程度。“切屑性”係指用切刀切斷未曝光膜時切屑飛散之容易程度。若該切屑附著於轉印膜的上表面等,則在其後的曝光步驟等中轉印到遮罩(光罩)而成為不良品的原因。 聚合物A1的分散度為1.0~6.0為較佳,1.0~5.0為更佳,1.0~4.0為進一步較佳,1.0~3.0為特佳。 當感光性組成物包含兩種以上的聚合物A1時,滿足上述重量平均分子量及/或分散度的範圍之聚合物A1的含量相對於所有聚合物A1的含量為10~100質量%為較佳,60~100質量%為更佳,90~100質量%為進一步較佳。 The weight average molecular weight of the polymer A1 is preferably at most 500,000, more preferably at most 100,000, and still more preferably at most 50,000. The weight average molecular weight of polymer A1 is preferably at least 3,000, more preferably at least 4,000, still more preferably at least 5,000, and particularly preferably at least 10,000. When the weight average molecular weight is 500,000 or less, resolution and developability can be improved. Moreover, when the weight average molecular weight is 3,000 or more, the property of the image development aggregate and the property of an unexposed film, such as the edge melting property of a transfer film, and chipping property, can be controlled. "Edge meltability" refers to the ease with which the photosensitive composition layer protrudes from the end surface of the roll when the transfer film is wound up into a roll. "Cutting property" refers to the ease with which shavings are scattered when the unexposed film is cut with a cutter. If this swarf adheres to the upper surface of the transfer film, etc., it will be transferred to a mask (reticle) in the subsequent exposure process etc., and will become a cause of defective products. The degree of dispersion of polymer A1 is preferably from 1.0 to 6.0, more preferably from 1.0 to 5.0, still more preferably from 1.0 to 4.0, and particularly preferably from 1.0 to 3.0. When the photosensitive composition contains two or more polymers A1, the content of the polymer A1 satisfying the range of the above-mentioned weight average molecular weight and/or degree of dispersion is preferably 10 to 100% by mass relative to the total content of the polymer A1 , 60-100 mass % is more preferable, and 90-100 mass % is still more preferable.

聚合物A1可以單獨使用一種,亦可以使用兩種以上。 當使用兩種以上的聚合物A1時,混合使用兩種包含來自於具有芳香族烴基之單體之構成單元之聚合物A1或者混合使用包含來自於具有芳香族烴基之單體之構成單元之聚合物A1和不包含來自於具有芳香族烴基之單體之構成單元之聚合物A1為較佳。在後者的情況下,包含來自於具有芳香族烴基之單體之構成單元之聚合物A1的含量相對於聚合物A1的所有構成單元為50質量%以上為較佳,70質量%以上為更佳,80質量%以上為進一步較佳,90質量%以上為特佳。上限相對於聚合物A1的所有構成單元為100質量%以下為較佳。 One type of polymer A1 may be used alone, or two or more types may be used. When two or more polymers A1 are used, two polymers A1 containing constituent units derived from monomers having an aromatic hydrocarbon group are used in combination, or polymers containing constituent units derived from monomers having an aromatic hydrocarbon group are used in combination. The substance A1 and the polymer A1 which does not contain the structural unit derived from the monomer which has an aromatic hydrocarbon group are preferable. In the latter case, the content of the polymer A1 containing structural units derived from monomers having an aromatic hydrocarbon group is preferably 50% by mass or more, more preferably 70% by mass or more, based on all the structural units of the polymer A1. , 80% by mass or more is further preferred, and 90% by mass or more is particularly preferred. The upper limit is preferably 100% by mass or less with respect to all the constituent units of the polymer A1.

聚合物A1的含量相對於感光性組成物的總固體成分為10.0~90.0質量%為較佳,20.0~80.0質量%為更佳,30.0~70.0質量%為進一步較佳,40.0~60.0質量%為特佳。當聚合物A1的含量相對於感光性組成物的總固體成分為90.0質量%以下時,能夠控制顯影時間。又,當聚合物A1的含量相對於感光性組成物的總固體成分為10.0質量%以上時,能夠提高耐邊緣熔融性。The content of the polymer A1 is preferably 10.0 to 90.0% by mass, more preferably 20.0 to 80.0% by mass, more preferably 30.0 to 70.0% by mass, and still more preferably 40.0 to 60.0% by mass, based on the total solid content of the photosensitive composition. Excellent. When content of polymer A1 is 90.0 mass % or less with respect to the total solid content of a photosensitive composition, developing time can be controlled. Moreover, when content of polymer A1 is 10.0 mass % or more with respect to the total solid content of a photosensitive composition, edge melting resistance can be improved.

作為聚合物A1的合成方法,例如可以舉出在將聚合物A1的各構成單元的原料單體用溶劑稀釋而成之溶液中添加適量自由基聚合起始劑並進行加熱攪拌之方法。亦可以一邊將混合物的一部分滴加到反應液中一邊進行合成。又,反應結束後,可以進一步加入溶劑而調整為所期望的濃度。 作為聚合物A1的合成方法,除了上述以外,例如可以舉出塊狀聚合、懸浮聚合及乳化聚合。 As a synthesis method of the polymer A1, for example, a method of adding an appropriate amount of a radical polymerization initiator to a solution obtained by diluting the raw material monomers of each constituent unit of the polymer A1 with a solvent, followed by heating and stirring is mentioned. It is also possible to synthesize while adding a part of the mixture dropwise to the reaction liquid. Moreover, after completion|finish of reaction, you may further add a solvent and adjust to desired density|concentration. As a synthesis method of the polymer A1, in addition to the above, block polymerization, suspension polymerization, and emulsion polymerization are mentioned, for example.

感光性組成物除了上述聚合物A1以外,可以包含其他樹脂。 作為其他樹脂,例如可以舉出丙烯酸樹脂、苯乙烯-丙烯酸系共聚物、聚胺酯樹脂、聚乙烯醇、聚乙烯甲醛、聚醯胺樹脂、聚酯樹脂、環氧樹脂、聚縮醛樹脂、聚羥基苯乙烯樹脂、聚醯亞胺樹脂、聚苯并㗁唑樹脂、聚矽氧烷樹脂、聚乙亞胺、聚烯丙基胺及聚伸烷基二醇。 The photosensitive composition may contain other resins other than the above-mentioned polymer A1. Examples of other resins include acrylic resins, styrene-acrylic copolymers, polyurethane resins, polyvinyl alcohol, polyvinyl formaldehyde, polyamide resins, polyester resins, epoxy resins, polyacetal resins, polyhydroxy Styrene resin, polyimide resin, polybenzoxazole resin, polysiloxane resin, polyethyleneimine, polyallylamine and polyalkylene glycol.

<聚合性化合物B> 感光性組成物包含聚合性化合物。 “聚合性化合物”係指具有聚合性基且在後述之光聚合起始劑C的作用下聚合之與上述聚合物A1不同的化合物。 <Polymerizable compound B> The photosensitive composition contains a polymerizable compound. The "polymerizable compound" means a compound different from the above-mentioned polymer A1 which has a polymerizable group and polymerizes under the action of the photopolymerization initiator C described later.

作為聚合性化合物所具有之聚合性基,只要為參與聚合反應之基即可,例如可以舉出乙烯基、丙烯醯基、甲基丙烯醯基、苯乙烯基及順丁烯二醯亞胺基等具有乙烯性不飽和基之基;環氧基及氧環丁烷基等具有陽離子性聚合性基之基,具有乙烯性不飽和基之基為較佳,丙烯醯基或甲基丙烯醯基為更佳。The polymerizable group possessed by the polymerizable compound may be any group as long as it participates in the polymerization reaction, and examples thereof include vinyl, acryl, methacryl, styryl, and maleimide groups. Groups with ethylenically unsaturated groups such as epoxy groups and oxetanyl groups with cationic polymerizable groups, preferably groups with ethylenically unsaturated groups, acryl or methacryl groups for better.

作為聚合性化合物,在進一步提高感光性之觀點上,在分子中具有1個以上的乙烯性不飽和基之化合物(以下,亦稱為“乙烯性不飽和化合物”。)為較佳,在分子中具有2個以上的乙烯性不飽和基之化合物(以下,亦稱為“多官能乙烯性不飽和化合物”。)為更佳。 又,在解析性及剝離性更優異的觀點上,乙烯性不飽和化合物在分子中所具有之乙烯性不飽和基的數量為1以上,1~6為較佳,1~3為更佳,2~3為進一步較佳。 As a polymerizable compound, a compound having one or more ethylenically unsaturated groups in the molecule (hereinafter also referred to as "ethylenically unsaturated compound") is preferable from the viewpoint of further improving photosensitivity. Compounds having two or more ethylenically unsaturated groups (hereinafter also referred to as "polyfunctional ethylenically unsaturated compounds") are more preferred. Also, from the standpoint of better resolving properties and exfoliation properties, the number of ethylenically unsaturated groups in the molecule of the ethylenically unsaturated compound is 1 or more, preferably 1-6, and more preferably 1-3. 2 to 3 are further preferred.

聚合性化合物可以具有伸烷氧基。 作為上述伸烷氧基,伸乙氧基或伸丙氧基為較佳,伸乙氧基為更佳。加成於聚合性化合物之伸烷氧基的加成數在每1分子中為2~30為較佳,2~20為更佳。 The polymerizable compound may have an alkyleneoxy group. As the above-mentioned alkyleneoxy group, ethoxyl or propoxyl is preferable, and ethoxyl is more preferable. The number of additions of the alkyleneoxy groups added to the polymerizable compound is preferably 2-30 per molecule, more preferably 2-20.

從感光性組成物的感光性與解析性及剝離性的平衡更優異的觀點而言,聚合性化合物包含在分子中具有2或3個乙烯性不飽和基之2官能或3官能乙烯性不飽和化合物為較佳。From the standpoint of a better balance between photosensitivity, resolving power, and peelability of the photosensitive composition, the polymerizable compound contains bifunctional or trifunctional ethylenically unsaturated groups having 2 or 3 ethylenically unsaturated groups in the molecule. compounds are preferred.

從剝離性優異的觀點而言,2官能乙烯性不飽和化合物的含量相對於聚合性化合物的總質量為20.0質量%以上為較佳,40.0質量%以上為更佳,50.0質量%以上為進一步較佳。上限為100.0質量%以下為較佳,80.0質量%以下為更佳。亦即,感光性組成物中所包含中所有聚合性化合物可以為2官能乙烯性不飽和化合物。 3官能乙烯性不飽和化合物的含量相對於聚合性化合物的總質量為10.0質量%以上為較佳,15.0質量%以上為更佳。上限為100.0質量%以下為較佳,80.0質量%以下為更佳,50.0質量%以下為進一步較佳。亦即,感光性組成物中所包含之所有聚合性化合物可以為3官能乙烯性不飽和化合物。 又,作為乙烯性不飽和化合物,具有(甲基)丙烯醯基作為聚合性基之(甲基)丙烯酸酯化合物為較佳。 From the viewpoint of excellent releasability, the content of the bifunctional ethylenically unsaturated compound is preferably 20.0% by mass or more, more preferably 40.0% by mass or more, and still more preferably 50.0% by mass or more, relative to the total mass of the polymerizable compound. good. The upper limit is preferably at most 100.0 mass %, more preferably at most 80.0 mass %. That is, all polymeric compounds contained in the photosensitive composition may be bifunctional ethylenically unsaturated compounds. The content of the trifunctional ethylenically unsaturated compound is preferably at least 10.0% by mass, more preferably at least 15.0% by mass, based on the total mass of the polymerizable compound. The upper limit is preferably at most 100.0 mass %, more preferably at most 80.0 mass %, and still more preferably at most 50.0 mass %. That is, all polymeric compounds contained in the photosensitive composition may be trifunctional ethylenically unsaturated compounds. Also, as the ethylenically unsaturated compound, a (meth)acrylate compound having a (meth)acryl group as a polymerizable group is preferable.

(聚合性化合物B1) 作為聚合性化合物,包含具有1個以上的芳香環及2個乙烯性不飽和基之聚合性化合物B1亦為較佳。 作為聚合性化合物B1,可以舉出上述聚合性化合物之中具有1個以上的芳香環之2官能乙烯性不飽和化合物。 (polymerizable compound B1) As the polymerizable compound, it is also preferable to include a polymerizable compound B1 having one or more aromatic rings and two ethylenically unsaturated groups. Examples of the polymerizable compound B1 include bifunctional ethylenically unsaturated compounds having one or more aromatic rings among the above-mentioned polymerizable compounds.

作為聚合性化合物B1所具有之芳香環,例如可以舉出苯環、萘環及蒽環等芳香族烴環;噻吩環、呋喃環、吡咯環、咪唑環、三唑環及吡啶環等芳香族雜環;將該等組合而之縮合環,芳香族烴環為較佳,苯環為更佳。上述芳香環可以進一步具有取代基。Examples of the aromatic ring possessed by the polymerizable compound B1 include aromatic hydrocarbon rings such as benzene rings, naphthalene rings, and anthracene rings; aromatic rings such as thiophene rings, furan rings, pyrrole rings, imidazole rings, triazole rings, and pyridine rings; Heterocyclic ring; the condensed ring formed by combining these rings is preferably an aromatic hydrocarbon ring, and more preferably a benzene ring. The above-mentioned aromatic ring may further have a substituent.

從藉由抑制感光性組成物層的由顯影液引起之膨潤來提高解析性之觀點而言,聚合性化合物B1具有雙酚結構為較佳。 作為雙酚結構,例如可以舉出來自於雙酚A(2,2-雙(4-羥基苯基)丙烷)之雙酚A結構、來自於雙酚F(2,2-雙(4-羥基苯基)甲烷)之雙酚F結構及來自於雙酚B(2,2-雙(4-羥基苯基)丁烷)之雙酚B結構,雙酚A結構為較佳。 It is preferable that the polymerizable compound B1 has a bisphenol structure from the viewpoint of improving resolution by suppressing swelling of the photosensitive composition layer by a developer. As the bisphenol structure, for example, the bisphenol A structure derived from bisphenol A (2,2-bis(4-hydroxyphenyl)propane), the structure derived from bisphenol F (2,2-bis(4-hydroxyphenyl) phenyl)methane) and bisphenol B structure from bisphenol B (2,2-bis(4-hydroxyphenyl)butane), bisphenol A structure is better.

作為具有雙酚結構之聚合性化合物B1,例如可以舉出具有雙酚結構和分別鍵結於該雙酚結構的兩端之2個聚合性基(較佳為(甲基)丙烯醯基)之化合物。 雙酚結構的兩端與上述聚合性基可以直接鍵結,亦可以經由1個以上的伸烷氧基而鍵結。 作為能夠加成於雙酚結構的兩端之伸烷氧基,伸乙氧基或伸丙氧基為較佳,伸乙氧基為更佳。加成於雙酚結構之伸烷氧基(較佳為伸乙氧基)的加成數在每1分子中為2~30為較佳,2~20為更佳。 作為具有雙酚結構之聚合性化合物B1,例如可以舉出日本特開2016-224162號公報的[0072]~[0080]段落,該等內容被編入本說明書中。 Examples of the polymerizable compound B1 having a bisphenol structure include those having a bisphenol structure and two polymerizable groups (preferably (meth)acryl groups) bonded to both ends of the bisphenol structure. compound. Both ends of the bisphenol structure may be directly bonded to the polymerizable group, or may be bonded via one or more alkyleneoxy groups. As the alkyleneoxy group which can be added to both ends of the bisphenol structure, an ethoxyl group or a propoxyl group is preferable, and an ethoxyl group is more preferable. The number of alkyleneoxy groups (preferably ethoxylate groups) added to the bisphenol structure is preferably 2 to 30 per molecule, more preferably 2 to 20. Examples of the polymerizable compound B1 having a bisphenol structure include paragraphs [0072] to [0080] of JP-A-2016-224162, and these contents are incorporated in the present specification.

作為聚合性化合物B1,具有雙酚A結構之2官能乙烯性不飽和化合物為較佳,2,2-雙(4-((甲基)丙烯醯氧基聚烷氧基)苯基)丙烷為更佳。 作為2,2-雙(4-((甲基)丙烯醯氧基聚烷氧基)苯基)丙烷,例如可以舉出2,2-雙(4-(甲基丙烯醯氧基二乙氧基)苯基)丙烷(FA-324M,Hitachi Chemical Co.,Ltd.製造)、2,2-雙(4-(甲基丙烯醯氧基乙氧基丙氧基)苯基)丙烷及2,2-雙(4-(甲基丙烯醯氧基五乙氧基)苯基)丙烷等乙氧基化雙酚A二甲基丙烯酸酯(BPE系列,Shin-Nakamura Chemical Co.,Ltd.製造)、2,2-雙(4-(甲基丙烯醯氧基十二乙氧基四丙氧基)苯基)丙烷(FA-3200MY,Hitachi Chemical Co.,Ltd.製造)以及乙氧基化(10)雙酚A二丙烯酸酯(NK Ester A-BPE-10,Shin-Nakamura Chemical Co.,Ltd.製造)。 As the polymerizable compound B1, a bifunctional ethylenically unsaturated compound having a bisphenol A structure is preferable, and 2,2-bis(4-((meth)acryloxypolyalkoxy)phenyl)propane is better. Examples of 2,2-bis(4-((meth)acryloxypolyalkoxy)phenyl)propane include 2,2-bis(4-(methacryloxydiethoxy) yl)phenyl)propane (FA-324M, manufactured by Hitachi Chemical Co., Ltd.), 2,2-bis(4-(methacryloxyethoxypropoxy)phenyl)propane and 2, Ethoxylated bisphenol A dimethacrylate such as 2-bis(4-(methacryloxypentaethoxy)phenyl)propane (BPE series, manufactured by Shin-Nakamura Chemical Co., Ltd.) , 2,2-bis(4-(methacryloxydodecyloxytetrapropoxy)phenyl)propane (FA-3200MY, manufactured by Hitachi Chemical Co., Ltd.), and ethoxylated ( 10) Bisphenol A diacrylate (NK Ester A-BPE-10, manufactured by Shin-Nakamura Chemical Co., Ltd.).

作為聚合性化合物B1,式(B1)所表示之化合物亦為較佳。As the polymerizable compound B1, a compound represented by the formula (B1) is also preferable.

[化學式7]

Figure 02_image013
[chemical formula 7]
Figure 02_image013

式(B1)中,R 1及R 2分別獨立地表示氫原子或甲基。A表示伸乙基。B表示伸丙基。n1及n3分別獨立地表示1~39的整數。n1+n3表示2~40的整數。n2及n4分別獨立地表示0~29的整數。n2+n4表示0~30的整數。 -(A-O)-及-(B-O)-的構成單元的排列可以為無規及嵌段中的任一種。在嵌段的情況下,-(A-O)-及-(B-O)-中的任一者可以在聯苯基(bisphenyl)側。 作為n1+n2+n3+n4,2~20為較佳,2~16為更佳,4~12為進一步較佳。又,n2+n4為0~10為較佳,0~4為更佳,0~2為進一步較佳,0為特佳。 In formula (B1), R 1 and R 2 each independently represent a hydrogen atom or a methyl group. A represents an ethylene group. B represents a propylene group. n1 and n3 each independently represent the integer of 1-39. n1+n3 represents the integer of 2-40. n2 and n4 each independently represent the integer of 0-29. n2+n4 represents an integer of 0-30. The arrangement of the constituent units of -(AO)- and -(BO)- may be either random or block. In the case of a block, any of -(AO)- and -(BO)- may be on the side of a bisphenyl group. As n1+n2+n3+n4, 2-20 are preferable, 2-16 are more preferable, 4-12 are still more preferable. Also, n2+n4 is preferably 0-10, more preferably 0-4, still more preferably 0-2, and particularly preferably 0.

從解析性更優異的觀點而言,聚合性化合物B1的含量相對於感光性組成物的總固體成分為10.0質量%以上為較佳,20.0質量%以上為更佳,25.0質量%以上為進一步較佳。從轉印性及邊緣熔融(感光性組成物從轉印構件的端部滲出之現象)的觀點而言,上限相對於感光性組成物的總固體成分為70.0質量%以下為較佳,60.0質量%以下為更佳。From the standpoint of better resolution, the content of the polymerizable compound B1 is preferably 10.0% by mass or more, more preferably 20.0% by mass or more, and still more preferably 25.0% by mass or more, relative to the total solid content of the photosensitive composition. good. From the viewpoint of transferability and edge melting (a phenomenon in which the photosensitive composition bleeds from the end of the transfer member), the upper limit is preferably 70.0% by mass or less, 60.0% by mass relative to the total solid content of the photosensitive composition Below % is better.

從解析性更優異的觀點而言,聚合性化合物B1的含量相對於聚合性化合物的總質量為40.0質量%以上為較佳,45.0質量%以上為更佳,50.0質量%以上為進一步較佳。從剝離性的觀點而言,上限相對於聚合性化合物的總質量為100.0質量%以下為較佳,99.0質量%以下為更佳,95.0質量%以下為進一步較佳,90.0質量%以下為特佳,85.0質量%以下為最佳。From the viewpoint of better resolution, the content of the polymerizable compound B1 is preferably 40.0% by mass or more, more preferably 45.0% by mass or more, and still more preferably 50.0% by mass or more, based on the total mass of the polymerizable compound. From the viewpoint of detachability, the upper limit is preferably 100.0% by mass or less, more preferably 99.0% by mass or less, still more preferably 95.0% by mass or less, and particularly preferably 90.0% by mass or less with respect to the total mass of the polymerizable compound. , below 85.0% by mass is the best.

(其他聚合性化合物) 感光性組成物除了上述以外,可以包含其他聚合性化合物。 作為其他聚合性化合物,例如可以舉出公知的聚合性化合物。 具體而言,可以舉出在分子中具有1個乙烯性不飽和基之化合物(單官能乙烯性不飽和化合物)、不具有芳香環之2官能乙烯性不飽和化合物及3官能以上的乙烯性不飽和化合物。 (other polymeric compounds) The photosensitive composition may contain other polymerizable compounds in addition to the above. As another polymeric compound, a well-known polymeric compound is mentioned, for example. Specifically, compounds having one ethylenically unsaturated group in the molecule (monofunctional ethylenically unsaturated compound), bifunctional ethylenically unsaturated compounds not having an aromatic ring, and trifunctional or more functional ethylenically unsaturated compounds include saturated compounds.

作為單官能乙烯性不飽和化合物,例如可以舉出(甲基)丙烯酸乙酯、(甲基)丙烯酸乙基己酯、2-(甲基)丙烯醯氧基乙基琥珀酸酯、聚乙二醇單(甲基)丙烯酸酯、聚丙二醇單(甲基)丙烯酸酯及(甲基)丙烯酸苯氧基乙酯。Examples of monofunctional ethylenically unsaturated compounds include ethyl (meth)acrylate, ethylhexyl (meth)acrylate, 2-(meth)acryloxyethylsuccinate, polyethylene glycol Alcohol Mono(meth)acrylate, Polypropylene Glycol Mono(meth)acrylate and Phenoxyethyl(meth)acrylate.

作為不具有芳香環之2官能乙烯性不飽和化合物,例如可以舉出伸烷基二醇二(甲基)丙烯酸酯、聚伸烷基二醇二(甲基)丙烯酸酯、胺酯二(甲基)丙烯酸酯及三羥甲基丙烷二丙烯酸酯。 作為伸烷基二醇二(甲基)丙烯酸酯,例如可以舉出三環癸烷二甲醇二丙烯酸酯(A-DCP,Shin-Nakamura Chemical Co.,Ltd.製造)、三環癸烷二甲醇二甲基丙烯酸酯(DCP,Shin-Nakamura Chemical Co.,Ltd.製造)、1,9-壬二醇二丙烯酸酯(A-NOD-N,Shin-Nakamura Chemical Co.,Ltd.製造)、1,6-己二醇二丙烯酸酯(A-HD-N,Shin-Nakamura Chemical Co.,Ltd.製造)、乙二醇二甲基丙烯酸酯、1,10-癸二醇二丙烯酸酯及新戊二醇二(甲基)丙烯酸酯。 作為聚伸烷基二醇二(甲基)丙烯酸酯,例如可以舉出聚乙二醇二(甲基)丙烯酸酯、二丙二醇二丙烯酸酯、三丙二醇二丙烯酸酯及聚丙二醇二(甲基)丙烯酸酯。 作為胺酯二(甲基)丙烯酸酯,例如可以舉出環氧丙烷改質胺酯二(甲基)丙烯酸酯以及環氧乙烷及環氧丙烷改質胺酯二(甲基)丙烯酸酯。又,作為胺基甲酸酯二(甲基)丙烯酸酯的市售品,例如可以舉出8UX-015A(Taisei Fine Chemical Co.,Ltd.製造)、UA-32P(Shin-Nakamura Chemical Co.,Ltd.製造)及UA-1100H(Shin-Nakamura Chemical Co.,Ltd.製造)。 Examples of bifunctional ethylenically unsaturated compounds not having an aromatic ring include alkylene glycol di(meth)acrylate, polyalkylene glycol di(meth)acrylate, urethane di(meth)acrylate, and urethane di(meth)acrylate. base) acrylate and trimethylolpropane diacrylate. Examples of alkylene glycol di(meth)acrylates include tricyclodecane dimethanol diacrylate (A-DCP, manufactured by Shin-Nakamura Chemical Co., Ltd.), tricyclodecane dimethanol Dimethacrylate (DCP, manufactured by Shin-Nakamura Chemical Co., Ltd.), 1,9-nonanediol diacrylate (A-NOD-N, manufactured by Shin-Nakamura Chemical Co., Ltd.), 1 , 6-hexanediol diacrylate (A-HD-N, manufactured by Shin-Nakamura Chemical Co., Ltd.), ethylene glycol dimethacrylate, 1,10-decanediol diacrylate, and neopentyl Glycol di(meth)acrylate. Examples of the polyalkylene glycol di(meth)acrylate include polyethylene glycol di(meth)acrylate, dipropylene glycol diacrylate, tripropylene glycol diacrylate, and polypropylene glycol di(meth)acrylate. Acrylate. Examples of the urethane di(meth)acrylate include propylene oxide modified urethane di(meth)acrylate, and ethylene oxide and propylene oxide modified urethane di(meth)acrylate. Moreover, examples of commercially available urethane di(meth)acrylates include 8UX-015A (manufactured by Taisei Fine Chemical Co., Ltd.), UA-32P (manufactured by Shin-Nakamura Chemical Co., Ltd.) and UA-1100H (manufactured by Shin-Nakamura Chemical Co., Ltd.).

作為3官能以上的乙烯性不飽和化合物,例如可以舉出二新戊四醇(三/四/五/六)(甲基)丙烯酸酯、新戊四醇(三/四)(甲基)丙烯酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、二三羥甲基丙烷四(甲基)丙烯酸酯、三羥甲基乙烷三(甲基)丙烯酸酯、異三聚氰酸三(甲基)丙烯酸酯、甘油三(甲基)丙烯酸酯及該等的環氧烷改質物。 “(三/四/五/六)(甲基)丙烯酸酯”係包含三(甲基)丙烯酸酯、四(甲基)丙烯酸酯、五(甲基)丙烯酸酯及六(甲基)丙烯酸酯之概念。又,“(三/四)(甲基)丙烯酸酯”係包含三(甲基)丙烯酸酯及四(甲基)丙烯酸酯之概念。 Examples of ethylenically unsaturated compounds having a trifunctional or higher function include diperythritol (tri/tetra/penta/hexa)(meth)acrylate, neopentylthritol (tri/tetra)(meth)acrylic acid ester, trimethylolpropane tri(meth)acrylate, ditrimethylolpropane tetra(meth)acrylate, trimethylolethane tri(meth)acrylate, isocyanuric acid tri(meth)acrylate Meth)acrylate, glycerol tri(meth)acrylate and their alkylene oxide modified substances. "(Three/four/five/six) (meth)acrylates" include tri(meth)acrylates, tetra(meth)acrylates, penta(meth)acrylates and hexa(meth)acrylates concept. Also, "(tri/tetra)(meth)acrylate" is a concept including tri(meth)acrylate and tetra(meth)acrylate.

作為3官能以上的乙烯性不飽和化合物的環氧烷改質物,例如可以舉出己內酯改質(甲基)丙烯酸酯化合物(例如,Nippon Kayaku Co.,Ltd.製造之KAYARAD(註冊商標)DPCA-20及Shin-Nakamura Chemical Co.,Ltd.製造之A-9300-1CL等)、環氧烷改質(甲基)丙烯酸酯化合物(例如,Nippon Kayaku Co.,Ltd.製造之KAYARAD RP-1040、Shin-Nakamura Chemical Co.,Ltd.製造之ATM-35E及A-9300、DAICEL-ALLNEX LTD.製造之EBECRYL(註冊商標)135、TOMOE Engineering Co.,Ltd.製造之SR454等)、乙氧基化甘油三丙烯酸酯(例如,Shin-Nakamura Chemical Co.,Ltd.製造之A-GLY-9E等)、ARONIX(註冊商標)系列(例如,TOAGOSEI CO.,LTD.製造之TO-2349、M-270、M-520及M-510等)。Examples of alkylene oxide modified products of trifunctional or higher ethylenically unsaturated compounds include caprolactone-modified (meth)acrylate compounds (for example, KAYARAD (registered trademark) manufactured by Nippon Kayaku Co., Ltd. DPCA-20 and A-9300-1CL manufactured by Shin-Nakamura Chemical Co., Ltd., etc.), alkylene oxide modified (meth)acrylate compounds (for example, KAYARAD RP- 1040, ATM-35E and A-9300 manufactured by Shin-Nakamura Chemical Co., Ltd., EBECRYL (registered trademark) 135 manufactured by DAICEL-ALLNEX LTD., SR454 manufactured by TOMOE Engineering Co., Ltd., etc.), ethoxy Glyceryl triacrylate (for example, A-GLY-9E manufactured by Shin-Nakamura Chemical Co., Ltd., etc.), ARONIX (registered trademark) series (for example, TO-2349 manufactured by TOAGOSEI CO., LTD., M -270, M-520 and M-510, etc.).

聚合性化合物可以為具有酸基(例如,羧基等)之聚合性化合物。上述酸基可以形成來自於酸酐之基。 作為具有酸基之聚合性化合物,例如可以舉出ARONIX(註冊商標)TO-2349(TOAGOSEI CO.,LTD.製造)、ARONIX(註冊商標)M-520(TOAGOSEI CO.,LTD.製造)及ARONIX(註冊商標)M-510(TOAGOSEI CO.,LTD.製造)。 作為具有酸基之聚合性化合物,例如可以舉出日本特開2004-239942號公報的[0025]~[0030]段落中所記載之具有酸基之聚合性化合物。 The polymeric compound may be a polymeric compound having an acid group (eg, carboxyl group, etc.). The above-mentioned acid groups may form groups derived from acid anhydrides. Examples of the polymerizable compound having an acid group include ARONIX (registered trademark) TO-2349 (manufactured by TOAGOSEI CO., LTD.), ARONIX (registered trademark) M-520 (manufactured by TOAGOSEI CO., LTD.) and ARONIX (registered trademark) M-510 (manufactured by TOAGOSEI CO., LTD.). Examples of the polymerizable compound having an acid group include those described in paragraphs [0025] to [0030] of JP-A-2004-239942.

聚合性化合物的分子量為3,000以下為較佳,200~3,000為更佳,280~2,200為進一步較佳,300~2,200為特佳。The molecular weight of the polymerizable compound is preferably at most 3,000, more preferably 200 to 3,000, still more preferably 280 to 2,200, and most preferably 300 to 2,200.

聚合性化合物可以單獨使用一種或者使用兩種以上。 聚合性化合物的含量相對於感光性組成物的總固體成分為10.0~70.0質量%為較佳,15.0~70.0質量%為更佳,20.0~70.0質量%為進一步較佳。 A polymeric compound can be used individually by 1 type or in 2 or more types. The content of the polymerizable compound is preferably from 10.0 to 70.0% by mass, more preferably from 15.0 to 70.0% by mass, and still more preferably from 20.0 to 70.0% by mass, relative to the total solid content of the photosensitive composition.

<光聚合起始劑C> 感光性組成物包含光聚合起始劑。 光聚合起始劑係接受紫外線、可見光線及X射線等活性光線而引發已敘述的聚合性化合物B的聚合之化合物。作為光聚合起始劑,例如可以舉出公知的光自由基聚合起始劑。 <Photopolymerization initiator C> The photosensitive composition contains a photopolymerization initiator. The photopolymerization initiator is a compound that initiates the polymerization of the above-mentioned polymerizable compound B by receiving active rays such as ultraviolet rays, visible rays, and X-rays. As a photopolymerization initiator, a well-known photoradical polymerization initiator is mentioned, for example.

作為光自由基聚合起始劑,例如可以舉出具有肟酯結構之光聚合起始劑、具有α-胺基烷基苯酮結構之光聚合起始劑、具有α-羥基烷基苯酮結構之光聚合起始劑、具有醯基氧化膦結構之光聚合起始劑及具有N-苯基甘胺酸結構之光聚合起始劑。Examples of photoradical polymerization initiators include photopolymerization initiators having an oxime ester structure, photopolymerization initiators having an α-aminoalkylphenone structure, and photopolymerization initiators having an α-hydroxyalkylphenone structure. A photopolymerization initiator, a photopolymerization initiator with an acyl phosphine oxide structure, and a photopolymerization initiator with an N-phenylglycine structure.

從感光性、曝光部及非曝光部的可見性及解析性的觀點而言,光自由基聚合起始劑包含選自包括2,4,5-三芳基咪唑二聚物及其衍生物之群組中之至少一種為較佳。另外,2,4,5-三芳基咪唑二聚物及其衍生物中之2個2,4,5-三芳基咪唑結構可以相同亦可以不同。 作為2,4,5-三芳基咪唑二聚物的衍生物,例如可以舉出2-(鄰氯苯基)-4,5-二苯基咪唑二聚物、2-(鄰氯苯基)-4,5-二(甲氧基苯基)咪唑二聚物、2-(鄰氟苯基)-4,5-二苯基咪唑二聚物、2-(鄰甲氧基苯基)-4,5-二苯基咪唑二聚物及2-(對甲氧基苯基)-4,5-二苯基咪唑二聚物。 From the viewpoints of photosensitivity, visibility and resolution of exposed and non-exposed parts, the photoradical polymerization initiator is selected from the group consisting of 2,4,5-triaryl imidazole dimers and derivatives thereof. At least one of the group is preferred. In addition, the two 2,4,5-triarylimidazole structures in the 2,4,5-triarylimidazole dimer and its derivatives may be the same or different. Examples of derivatives of 2,4,5-triaryl imidazole dimers include 2-(o-chlorophenyl)-4,5-diphenylimidazole dimer, 2-(o-chlorophenyl) -4,5-bis(methoxyphenyl)imidazole dimer, 2-(o-fluorophenyl)-4,5-diphenylimidazole dimer, 2-(o-methoxyphenyl)- 4,5-diphenylimidazole dimer and 2-(p-methoxyphenyl)-4,5-diphenylimidazole dimer.

作為光自由基聚合起始劑,例如可以舉出日本特開2011-095716號公報的[0031]~[0042]段落及日本特開2015-014783號公報的[0064]~[0081]段落中所記載之光自由基聚合起始劑。Examples of photoradical polymerization initiators include those described in paragraphs [0031] to [0042] of JP-A-2011-095716 and paragraphs [0064]-[0081] of JP-A-2015-014783. Recorded photoradical polymerization initiator.

作為光自由基聚合起始劑,例如可以舉出二甲基胺基苯甲酸乙酯(DBE)、安息香甲醚、(p,p’-二甲氧基苄基)大茴香酯、TAZ-110(Midori Kagaku Co.,Ltd.製造)、二苯甲酮、4,4’-雙(二乙基胺基)二苯甲酮、TAZ-111(Midori Kagaku Co.,Ltd.製造)、1-[4-(苯硫基)]-1,2-辛二酮-2-(O-苯甲醯肟)(IRGACURE(註冊商標)OXE-01,BASF公司製造)、1-[9-乙基-6-(2-甲基苯甲醯基)-9H-咔唑-3-基]乙酮-1-(O-乙醯肟)(IRGACURE OXE-02,BASF公司製造)、IRGACURE OXE-03(BASF公司製造)、IRGACURE OXE-04(BASF公司製造)、2-(二甲基胺基)-2-[(4-甲基苯基)甲基]-1-[4-(4-口末啉基)苯基]-1-丁酮(Omnirad 379EG,IGM Resins B.V.公司製造)、2-甲基-1-(4-甲硫基苯基)-2-口末啉基丙-1-酮(Omnirad 907,IGM Resins B.V.公司製造)、2-羥基-1-{4-[4-(2-羥基-2-甲基丙醯基)苄基]苯基}-2-甲基丙-1-酮(Omnirad 127,IGM Resins B.V.公司製造)、2-苄基-2-二甲基胺基-1-(4-口末啉基苯基)丁酮-1(Omnirad 369,IGM Resins B.V.公司製造)、2-羥基-2-甲基-1-苯基丙-1-酮(Omnirad 1173,IGM Resins B.V.公司製造)、1-羥基環己基苯基酮(Omnirad 184,IGM Resins B.V.公司製造)、2,2-二甲氧基-1,2-二苯基乙-1-酮(Omnirad 651,IGM Resins B.V.公司製造)、2,4,6-三甲基苯甲醯基-二苯基氧化膦(Omnirad TPO H,IGM Resins B.V.公司製造)、雙(2,4,6-三甲基苯甲醯基)苯基氧化膦(Omnirad 819,IGM Resins B.V.公司製造)、肟酯系的光聚合起始劑(Lunar 6,DKSH Japan K.K.製造)、2,2’-雙(2-氯苯基)-4,4’,5,5’-四苯基聯咪唑(2-(2-氯苯基)-4,5-二苯基咪唑二聚物)(B-CIM,Hampford公司製造)、2-(鄰氯苯基)-4,5-二苯基咪唑二聚物(BCTB,Tokyo Chemical Industry Co.,Ltd.製造)、1-[4-(苯硫基)苯基]-3-環戊基丙烷-1,2-二酮-2-(O-苯甲醯肟)(TR-PBG-305,Changzhou Tronly New Electronic Materials CO.,LTD.製造)、1,2-丙二酮,3-環己基-1-[9-乙基-6-(2-呋喃基羰基)-9H-咔唑-3-基]-,2-(O-乙醯肟)(TR-PBG-326,Changzhou Tronly New Electronic Materials CO.,LTD.製造)及3-環己基-1-(6-(2-(苯甲醯氧基亞胺基)己醯基)-9-乙基-9H-咔唑-3-基)-丙烷-1,2-二酮-2-(O-苯甲醯肟)(TR-PBG-391,Changzhou Tronly New Electronic Materials CO.,LTD.製造)。Examples of photoradical polymerization initiators include dimethylaminobenzoic acid ethyl ester (DBE), benzoin methyl ether, (p,p'-dimethoxybenzyl) anisyl ester, TAZ-110 (manufactured by Midori Kagaku Co., Ltd.), benzophenone, 4,4'-bis(diethylamino)benzophenone, TAZ-111 (manufactured by Midori Kagaku Co., Ltd.), 1- [4-(Phenylthio)]-1,2-octanedione-2-(O-benzoyl oxime) (IRGACURE (registered trademark) OXE-01, manufactured by BASF Corporation), 1-[9-ethyl -6-(2-Methylbenzoyl)-9H-carbazol-3-yl]ethanone-1-(O-acetyloxime) (IRGACURE OXE-02, manufactured by BASF), IRGACURE OXE-03 (manufactured by BASF Corporation), IRGACURE OXE-04 (manufactured by BASF Corporation), 2-(dimethylamino)-2-[(4-methylphenyl)methyl]-1-[4-(4- Endolinyl)phenyl]-1-butanone (Omnirad 379EG, manufactured by IGM Resins B.V.), 2-methyl-1-(4-methylthiophenyl)-2-enderinylpropan-1- Ketone (Omnirad 907, manufactured by IGM Resins B.V.), 2-hydroxy-1-{4-[4-(2-hydroxy-2-methylpropionyl)benzyl]phenyl}-2-methylpropane- 1-keto (Omnirad 127, manufactured by IGM Resins B.V.), 2-benzyl-2-dimethylamino-1-(4-portolinylphenyl)butanone-1 (Omnirad 369, manufactured by IGM Resins B.V. company), 2-hydroxy-2-methyl-1-phenylpropan-1-one (Omnirad 1173, manufactured by IGM Resins B.V.), 1-hydroxycyclohexyl phenyl ketone (Omnirad 184, manufactured by IGM Resins B.V. ), 2,2-dimethoxy-1,2-diphenylethan-1-one (Omnirad 651, manufactured by IGM Resins B.V.), 2,4,6-trimethylbenzoyl-diphenyl phosphine oxide (Omnirad TPO H, manufactured by IGM Resins B.V.), bis(2,4,6-trimethylbenzoyl)phenylphosphine oxide (Omnirad 819, manufactured by IGM Resins B.V.), oxime ester-based Photopolymerization initiator (Lunar 6, manufactured by DKSH Japan K.K.), 2,2'-bis(2-chlorophenyl)-4,4',5,5'-tetraphenylbiimidazole (2-(2- Chlorophenyl)-4,5-diphenylimidazole dimer) (B-CIM, manufactured by Hampford), 2-(o-chlorophenyl)-4,5-diphenylimidazole dimer (BCTB, Tokyo Chemical Industry Co., Ltd.), 1-[4-(phenylthio)phenyl]-3-cyclopentylpropane-1,2-dione-2-(O-benzoyl oxime) ( TR-PBG-305, manufactured by Changzhou Tronly New Electronic Materials CO., LTD.), 1,2-propanedione, 3-cyclohexyl-1-[9-ethyl-6-(2-furylcarbonyl)- 9H-carbazol-3-yl]-,2-(O-acetyloxime) (TR-PBG-326, manufactured by Changzhou Tronly New Electronic Materials CO., LTD.) and 3-cyclohexyl-1-(6- (2-(Benzyloxyimino)hexyl)-9-ethyl-9H-carbazol-3-yl)-propane-1,2-dione-2-(O-benzoyl oxime) (TR-PBG-391, manufactured by Changzhou Tronly New Electronic Materials CO., LTD.).

聚合起始劑可以單獨使用一種,亦可以使用兩種以上。 聚合起始劑的含量相對於感光性組成物的總固體成分為0.1質量%以上為較佳,0.5質量%以上為更佳。上限相對於感光性組成物的總固體成分為20質量%以下為較佳,15.0質量%以下為更佳,10.0質量%以下為進一步較佳。 One kind of polymerization initiator may be used alone, or two or more kinds may be used. The content of the polymerization initiator is preferably at least 0.1% by mass, more preferably at least 0.5% by mass, based on the total solid content of the photosensitive composition. The upper limit is preferably at most 20 mass %, more preferably at most 15.0 mass %, and still more preferably at most 10.0 mass %, with respect to the total solid content of the photosensitive composition.

<光酸產生劑D> 感光性組成物包含光酸產生劑。 光酸產生劑為選自包括鎓鹽化合物、肟磺酸鹽化合物、三𠯤化合物、硝基苄基磺酸鹽化合物、二碸化合物及雙磺醯基重氮甲烷化合物(統稱為特定光酸產生劑)之群組中之一種以上的光酸產生劑。 <Photoacid generator D> The photosensitive composition contains a photoacid generator. Photoacid generators are selected from the group consisting of onium salt compounds, oxime sulfonate compounds, trioxane compounds, nitrobenzylsulfonate compounds, disulfide compounds and bissulfonyl diazomethane compounds (collectively referred to as specific photoacid generators). one or more photoacid generators in the group of agents).

作為特定光酸產生劑,能夠使用公知的化合物。 作為鎓鹽,可以舉出鋶鹽、錪鹽及重氮鹽等,鋶鹽或錪鹽為較佳,可以舉出下述式(D1)或式(D2)所表示之化合物。 作為肟磺酸鹽化合物,可以舉出下述式(D3)所表示之化合物。 作為三𠯤化合物,可以舉出下述式(D7)所表示之化合物。 作為硝基苄基磺酸鹽化合物,可以舉出下述式(D4)所表示之化合物。 作為二碸化合物,可以舉出下述式(D6)所表示之化合物。 作為雙磺醯基重氮甲烷化合物,可以舉出下述式(D5)所表示之化合物。 作為特定光酸產生劑,在本發明的效果更優異的觀點上,鋶鹽或肟磺酸鹽為較佳。 Known compounds can be used as the specific photoacid generator. Examples of onium salts include percite salts, iodonium salts, diazonium salts, etc., preferably permeium salts or iodonium salts, and examples thereof include compounds represented by the following formula (D1) or formula (D2). Examples of the oxime sulfonate compound include compounds represented by the following formula (D3). The compound represented by the following formula (D7) is mentioned as a trioxane compound. Examples of the nitrobenzylsulfonate compound include compounds represented by the following formula (D4). Examples of disulfide compounds include compounds represented by the following formula (D6). Examples of the bissulfonyldiazomethane compound include compounds represented by the following formula (D5). As the specific photoacid generator, a permeic acid salt or an oxime sulfonate is preferable from the viewpoint that the effect of the present invention is more excellent.

[化學式8]

Figure 02_image015
[chemical formula 8]
Figure 02_image015

Rd 1~Rd 15各自獨立地表示有機基。m表示0~2的整數。X -表示相對陰離子。Rd 16及Rd 17各自獨立地表示氫原子或烷基。 式(D1)中,Rd 1~Rd 3各自獨立地為芳基或烷基(可以為直鏈狀、支鏈狀及環狀中的任一種。)為較佳。又,Rd 1~Rd 3中的2個以上可以相互鍵結而形成環。 Rd 1 to Rd 15 each independently represent an organic group. m represents an integer of 0-2. X - indicates relative anion. Rd 16 and Rd 17 each independently represent a hydrogen atom or an alkyl group. In the formula (D1), Rd 1 to Rd 3 are each independently an aryl group or an alkyl group (any of linear, branched and cyclic may be possible.) It is preferable. In addition, two or more of Rd 1 to Rd 3 may be bonded to each other to form a ring.

作為芳基,可以為單環,亦可以為多環。作為芳基,苯基或萘基為較佳,苯基為更佳。 芳基可以具有取代基。作為取代基,例如可以舉出烷基(例如碳數1~15)、環烷基(例如碳數3~15)、芳基(例如碳數6~14)、烷氧基(例如碳數1~15)、鹵素原子、羥基、苯硫基及-S +(R A)(R B)等。 作為R A及R B,其含義與Rd 1~Rd 3相同,較佳態樣亦相同。 The aryl group may be monocyclic or polycyclic. As the aryl group, phenyl or naphthyl is preferable, and phenyl is more preferable. The aryl group may have a substituent. Examples of substituents include alkyl (eg, 1 to 15 carbons), cycloalkyl (eg, 3 to 15 carbons), aryl (eg, 6 to 14 carbons), alkoxy (eg, 1 to 15 carbons), ~15), halogen atom, hydroxyl group, phenylthio group and -S + ( RA ) ( RB ), etc. R A and R B have the same meanings as Rd 1 to Rd 3 , and preferred embodiments are also the same.

作為烷基,可以為直鏈狀、支鏈狀及環狀中的任一種,例如可以舉出碳數1~15的直鏈狀烷基、碳數3~15的支鏈狀烷基或碳數3~15的環烷基,具體而言,可以舉出甲基、乙基、丙基、正丁基、二級丁基、三級丁基、環丙基、環丁基及環己基等。另外,烷基中的CH 2可以取代為氧原子等雜原子及羰基等雜原子團。 烷基可以具有取代基。作為取代基,例如可以舉出芳基(例如碳數6~14)、烷氧基(例如碳數1~15)、鹵素原子、羥基及苯硫基等。 The alkyl group may be any of linear, branched and cyclic, for example, a linear alkyl group having 1 to 15 carbons, a branched alkyl group having 3 to 15 carbons, or a carbon Cycloalkyl groups with a number of 3 to 15, specifically, methyl, ethyl, propyl, n-butyl, secondary butyl, tertiary butyl, cyclopropyl, cyclobutyl, and cyclohexyl, etc. . In addition, CH 2 in the alkyl group may be substituted with a heteroatom such as an oxygen atom or a heteroatom group such as a carbonyl group. An alkyl group may have a substituent. Examples of substituents include aryl groups (eg, having 6 to 14 carbon atoms), alkoxy groups (eg, having 1 to 15 carbon atoms), halogen atoms, hydroxyl groups, and thiophenyl groups.

又,作為Rd 1~Rd 3中的2個以上相互鍵結而形成之環,可以為芳香族環及脂環中的任一種,且可以為單環,亦可以為多環。作為環員數,例如為3~10,4~8為較佳,5或6為更佳。又,上述環可以包含氧原子、氮原子、硫原子、酮基、醚鍵、酯鍵或醯胺鍵。 In addition, the ring formed by bonding two or more of Rd 1 to Rd 3 to each other may be any of an aromatic ring and an alicyclic ring, and may be a monocyclic ring or a polycyclic ring. The number of ring members is, for example, 3 to 10, preferably 4 to 8, more preferably 5 or 6. In addition, the above-mentioned ring may contain an oxygen atom, a nitrogen atom, a sulfur atom, a keto group, an ether bond, an ester bond, or an amide bond.

作為X -,並不受特別限制,例如可以舉出BF 4 -、PF 6 -、ClO 4 -、AsF 6 -、經取代或未經取代之烷烴磺酸陰離子(例如,CF 3SO 2 -、C 3F 7SO 3 -、C 4F 9SO 3 -及樟腦磺酸陰離子等)、經取代之苯磺酸陰離子(例如,對甲苯磺酸陰離子及均三甲苯磺酸陰離子等)及雙磺醯亞胺陰離子(例如,雙(三氟甲磺醯亞胺陰離子及環六氟丙烷-1,3-雙(磺醯基)醯亞胺陰離子等)等。 X - is not particularly limited, and examples include BF 4 - , PF 6 - , ClO 4 - , AsF 6 - , substituted or unsubstituted alkanesulfonate anions (for example, CF 3 SO 2 - , C 3 F 7 SO 3 - , C 4 F 9 SO 3 - and camphorsulfonic acid anion, etc.), substituted benzenesulfonic acid anions (such as p-toluenesulfonic acid anion and mesitylenesulfonic acid anion, etc.) and disulfonic acid anion Imide anion (for example, bis(trifluoromethanesulfonylimide anion, cyclohexafluoropropane-1,3-bis(sulfonyl)imide anion, etc.), etc.

以下示出式(D1)所表示之光酸產生劑的具體例。下述具體例中,tBu表示三級丁基,Ph表示苯基。又,X -表示選自包括BF 4 -、PF 6 -、ClO 4 -、AsF 6 -、經取代或未經取代之烷烴磺酸陰離子(例如,CF 3SO 2 -、C 3F 7SO 3 -、C 4F 9SO 3 -及樟腦磺酸陰離子等)、經取代之苯磺酸陰離子(例如,對甲苯磺酸陰離子及均三甲苯磺酸陰離子等)及雙磺醯亞胺陰離子(例如,雙(三氟甲磺醯亞胺陰離子及環六氟丙烷-1,3-雙(磺醯基)醯亞胺陰離子等)之群組中之相對陰離子。 Specific examples of the photoacid generator represented by the formula (D1) are shown below. In the following specific examples, tBu represents a tertiary butyl group, and Ph represents a phenyl group. In addition, X - represents an ion selected from BF 4 - , PF 6 - , ClO 4 - , AsF 6 - , substituted or unsubstituted alkanesulfonic acid anions (for example, CF 3 SO 2 - , C 3 F 7 SO 3 - , C 4 F 9 SO 3 - and camphorsulfonic acid anions, etc.), substituted benzenesulfonic acid anions (such as p-toluenesulfonic acid anions and mesitylenesulfonic acid anions, etc.) and bissulfonimide anions (such as , the relative anion in the group of bis(trifluoromethanesulfonylimide anion and cyclohexafluoropropane-1,3-bis(sulfonyl)imide anion, etc.).

[化學式9]

Figure 02_image017
[chemical formula 9]
Figure 02_image017

式(D2)中,作為Rd 4及Rd 5,其含義與Rd 1~Rd 3相同,較佳態樣亦相同。作為Rd 4及Rd 5,其中經取代或未經取代之芳基為較佳,經取代或未經取代之苯基為更佳。 In the formula (D2), Rd 4 and Rd 5 have the same meanings as Rd 1 to Rd 3 , and preferred embodiments are also the same. As Rd 4 and Rd 5 , a substituted or unsubstituted aryl group is preferred, and a substituted or unsubstituted phenyl group is more preferred.

以下示出式(D2)所表示之光酸產生劑的具體例。在下述具體例中,,X -表示選自包括BF 4 -、PF 6 -、ClO 4 -、AsF 6 -、經取代或未經取代之烷烴磺酸陰離子(例如,CF 3SO 2 -、C 3F 7SO 3 -、C 4F 9SO 3 -及樟腦磺酸陰離子等)、經取代之苯磺酸陰離子(例如,對甲苯磺酸陰離子及均三甲苯磺酸陰離子等)及雙磺醯亞胺陰離子(例如,雙(三氟甲磺醯亞胺陰離子及環六氟丙烷-1,3-雙(磺醯基)醯亞胺陰離子等)之群組中之相對陰離子。 Specific examples of the photoacid generator represented by the formula (D2) are shown below. In the following specific examples, X - represents an ion selected from BF 4 - , PF 6 - , ClO 4 - , AsF 6 - , substituted or unsubstituted alkanesulfonate anions (for example, CF 3 SO 2 - , C 3 F 7 SO 3 - , C 4 F 9 SO 3 - and camphorsulfonic acid anion, etc.), substituted benzenesulfonic acid anion (for example, p-toluenesulfonic acid anion and mesitylenesulfonic acid anion, etc.) and bissulfonyl A counter anion in the group of iminium anions (for example, bis(trifluoromethanesulfonylimide anion and cyclohexafluoropropane-1,3-bis(sulfonyl)imide anion, etc.).

[化學式10]

Figure 02_image019
[chemical formula 10]
Figure 02_image019

式(D3)中,作為Rd 6,其含義與Rd 1~Rd 3相同,較佳態樣亦相同。 作為Rd 7,芳基為較佳。 作為芳基,可以為單環及多環中的任一種,環員原子數為6~20為較佳,6~15為更佳。作為芳基,具體而言,可以舉出苯基、萘基、蒽基及茀基等。 芳基可以具有取代基。作為取代基,例如可以舉出烷基(例如碳數1~15)、環烷基(例如碳數3~15)、芳基(例如碳數6~14)、烷氧基(例如碳數1~15)、鹵素原子及羥基等。 In the formula (D3), Rd 6 has the same meaning as Rd 1 to Rd 3 , and preferred embodiments are also the same. An aryl group is preferable as Rd 7 . The aryl group may be either monocyclic or polycyclic, and the number of ring member atoms is preferably 6-20, more preferably 6-15. Specific examples of the aryl group include phenyl, naphthyl, anthracenyl, and perylene. The aryl group may have a substituent. Examples of substituents include alkyl (eg, 1 to 15 carbons), cycloalkyl (eg, 3 to 15 carbons), aryl (eg, 6 to 14 carbons), alkoxy (eg, 1 to 15 carbons), ~15), halogen atoms and hydroxyl groups, etc.

作為Rd 8,芳基、烷基或氰基為較佳。 作為Rd 8所表示之芳基,可以舉出與Rd 7所表示之芳基相同者。 作為Rd 8所表示之烷基,可以為直鏈狀、支鏈狀、環狀中的任一種,例如可以舉出碳數1~15的直鏈狀烷基、碳數3~15的支鏈狀烷基或碳數3~15的環烷基,具體而言,可以舉出甲基、乙基、丙基、正丁基、二級丁基、三級丁基、環丙基、環丁基及環己基等。另外,烷基中的CH 2可以取代為氧原子等雜原子及羰基等雜原子團。 烷基可以具有取代基。作為取代基,例如可以舉出芳基(例如碳數6~14)、烷氧基(例如碳數1~15)、鹵素原子(較佳為氟原子)及羥基等。另外,烷基為全氟烷基亦為較佳。 又,作為Rd 7與Rd 8相互鍵結而形成之環,可以為芳香族環及脂環中的任一種,且可以為單環,亦可以為多環。作為環員數,例如為3~20,4~15為較佳,6~15為更佳。又,上述環可以包含氧原子、氮原子、硫原子、酮基、醚鍵、酯鍵或醯胺鍵。 As Rd 8 , an aryl group, an alkyl group or a cyano group is preferable. Examples of the aryl group represented by Rd 8 include the same ones as those represented by Rd 7 . The alkyl group represented by Rd 8 may be linear, branched, or cyclic, and examples include linear alkyl groups having 1 to 15 carbons and branched alkyl groups having 3 to 15 carbons. Alkyl groups or cycloalkyl groups with 3 to 15 carbon atoms, specifically, methyl, ethyl, propyl, n-butyl, secondary butyl, tertiary butyl, cyclopropyl, cyclobutyl base and cyclohexyl etc. In addition, CH 2 in the alkyl group may be substituted with a heteroatom such as an oxygen atom or a heteroatom group such as a carbonyl group. An alkyl group may have a substituent. Examples of substituents include aryl groups (eg, having 6 to 14 carbon atoms), alkoxy groups (eg, having 1 to 15 carbon atoms), halogen atoms (preferably fluorine atoms), hydroxyl groups, and the like. In addition, it is also preferable that the alkyl group is a perfluoroalkyl group. In addition, the ring formed by bonding Rd 7 and Rd 8 to each other may be any of an aromatic ring and an alicyclic ring, and may be a monocyclic ring or a polycyclic ring. The number of ring members is, for example, 3 to 20, preferably 4 to 15, more preferably 6 to 15. In addition, the above-mentioned ring may contain an oxygen atom, a nitrogen atom, a sulfur atom, a keto group, an ether bond, an ester bond, or an amide bond.

以下示出式(D3)所表示之光酸產生劑的具體例。Specific examples of the photoacid generator represented by the formula (D3) are shown below.

[化學式11]

Figure 02_image021
[chemical formula 11]
Figure 02_image021

式(D4)中,作為Rd 10,烷基或芳基為較佳。作為Rd 10所表示之烷基及芳基,與Rd 6所表示之烷基及芳基相同,較佳態樣亦相同。 作為Rd 9,烷基或硝基為較佳。作為Rd 9所表示之烷基,可以舉出與Rd 1~Rd 3所表示之烷基相同者。 Rd 16及Rd 17分別獨立地表示氫原子或烷基。作為Rd 16及Rd 17所表示之烷基,可以舉出與Rd 1~Rd 3所表示之烷基相同者。作為Rd 16及Rd 17,其中氫原子為較佳。以下示出式(D4)所表示之光酸產生劑的具體例。 In formula (D4), an alkyl group or an aryl group is preferable as Rd 10 . The alkyl group and aryl group represented by Rd 10 are the same as the alkyl group and aryl group represented by Rd 6 , and preferred embodiments are also the same. As Rd 9 , an alkyl group or a nitro group is preferable. Examples of the alkyl group represented by Rd 9 include the same ones as those represented by Rd 1 to Rd 3 . Rd 16 and Rd 17 each independently represent a hydrogen atom or an alkyl group. Examples of the alkyl group represented by Rd 16 and Rd 17 include the same ones as those represented by Rd 1 to Rd 3 . As Rd 16 and Rd 17 , hydrogen atoms are preferred. Specific examples of the photoacid generator represented by the formula (D4) are shown below.

[化學式12]

Figure 02_image023
[chemical formula 12]
Figure 02_image023

式(D5)中,作為Rd 11及Rd 12,烷基或芳基為較佳。作為Rd 11及Rd 12所表示之烷基及芳基,與Rd 6所表示之烷基及芳基相同,較佳態樣亦相同。 以下示出式(D5)所表示之光酸產生劑的具體例。 In formula (D5), Rd 11 and Rd 12 are preferably alkyl or aryl. The alkyl group and aryl group represented by Rd 11 and Rd 12 are the same as the alkyl group and aryl group represented by Rd 6 , and preferred embodiments are also the same. Specific examples of the photoacid generator represented by the formula (D5) are shown below.

[化學式13]

Figure 02_image025
[chemical formula 13]
Figure 02_image025

式(D6)中,作為Rd 13及Rd 14,芳基為較佳。作為Rd 13及Rd 14所表示之芳基,與Rd 6所表示之芳基相同,較佳態樣亦相同。 以下示出式(D6)所表示之光酸產生劑的具體例。 In formula (D6), Rd 13 and Rd 14 are preferably aryl groups. The aryl group represented by Rd 13 and Rd 14 is the same as the aryl group represented by Rd 6 , and the preferred embodiment is also the same. Specific examples of the photoacid generator represented by the formula (D6) are shown below.

[化學式14]

Figure 02_image027
[chemical formula 14]
Figure 02_image027

式(D7)中,Rd 15為*-L X1-Rd X1所表示之基為較佳。L X1表示單鍵或2價的連結基。Rd X1可以舉出芳香族烴環基或芳香族雜環基。 作為L X1所表示之2價的連結基,例如可以舉出-CO-、-O-、-SO-、-SO 2-、-NR A-、伸烷基(較佳為碳數1~6。可以為直鏈狀,亦可以為支鏈狀)、伸烯基(較佳為碳數2~6。可以為直鏈狀,亦可以為支鏈狀)、伸炔基(較佳為碳數2~6。可以為直鏈狀,亦可以為支鏈狀)及將該等中的複數個組合而成之2價的連結基。又,上述伸烷基、伸烯基及伸炔基可以具有取代基。作為取代基,例如可以舉出鹵素原子(較佳為氟原子)及羥基等。作為R A,可以舉出氫原子或碳數1~6的烷基。 其中,L X1為單鍵或伸烯基為較佳,單鍵或碳數2~4的伸烯基為更佳。 作為Rd X1所表示之芳香族烴環基,例如可以舉出苯基及萘基。 作為Rd X1所表示之芳香族雜環基,可以舉出吡咯環基、呋喃環基、噻吩環基、吲哚環基、苯并呋喃環基及苯并噻吩呋喃環基等,其中呋喃環基為較佳。 Rd X1所表示之芳香族烴環基及芳香族雜環基可以進一步具有取代基。作為取代基,例如可以舉出烷基(例如碳數1~15)、環烷基(例如碳數3~15)、芳基(例如碳數6~14)、烷氧基(例如碳數1~15)、鹵素原子及羥基等。 以下示出式(D7)所表示之光酸產生劑的具體例。 In formula (D7), Rd 15 is preferably a group represented by *-L X1 -Rd X1 . L X1 represents a single bond or a divalent linking group. Rd X1 includes an aromatic hydrocarbon ring group or an aromatic heterocyclic group. Examples of the divalent linking group represented by L X1 include -CO-, -O-, -SO-, -SO 2 -, -NR A -, alkylene (preferably having 1 to 6 carbon atoms) It can be linear or branched), alkenyl (preferably carbon number 2 to 6. It can be linear or branched), alkynyl (preferably carbon The number is 2 to 6. It may be a straight chain or a branched chain) and a divalent linking group formed by combining a plurality of these. Moreover, the above-mentioned alkylene group, alkenylene group and alkynylene group may have a substituent. As a substituent, a halogen atom (preferably a fluorine atom), a hydroxyl group, etc. are mentioned, for example. Examples of R A include a hydrogen atom or an alkyl group having 1 to 6 carbon atoms. Among them, L X1 is preferably a single bond or an alkenylene group, more preferably a single bond or an alkenylene group having 2 to 4 carbon atoms. Examples of the aromatic hydrocarbon ring group represented by Rd X1 include phenyl and naphthyl. The aromatic heterocyclic group represented by Rd X1 includes pyrrole ring group, furan ring group, thiophene ring group, indole ring group, benzofuran ring group and benzothiophene furan ring group, etc., wherein the furan ring group is better. The aromatic hydrocarbon ring group and aromatic heterocyclic group represented by Rd X1 may further have a substituent. Examples of substituents include alkyl (eg, 1 to 15 carbons), cycloalkyl (eg, 3 to 15 carbons), aryl (eg, 6 to 14 carbons), alkoxy (eg, 1 to 15 carbons), ~15), halogen atoms and hydroxyl groups, etc. Specific examples of the photoacid generator represented by the formula (D7) are shown below.

[化學式15]

Figure 02_image029
[chemical formula 15]
Figure 02_image029

光酸產生劑可以單獨使用一種,亦可以使用兩種以上。 光酸產生劑的含量相對於感光性組成物的總固體成分為0.1質量%以上為較佳,0.5質量%以上為更佳。上限相對於感光性組成物的總固體成分為10.0質量%以下為較佳,8.0質量%以下為更佳,6.0質量%以下為進一步較佳。 A photoacid generator may be used individually by 1 type, and may use 2 or more types. The content of the photoacid generator is preferably at least 0.1% by mass, more preferably at least 0.5% by mass, based on the total solid content of the photosensitive composition. The upper limit is preferably at most 10.0 mass %, more preferably at most 8.0 mass %, and still more preferably at most 6.0 mass %, with respect to the total solid content of the photosensitive composition.

<色素> 從曝光部及非曝光部的可見性以及顯影後的圖案可見性及解析性的觀點而言,感光性組成物可以包含顯色時的波長範圍400~780nm中的最大吸收波長為450nm以上且最大吸收波長藉由酸、鹼或自由基而發生變化之色素(以下,亦稱為“色素N”。)。 當包含色素N時,詳細機制雖然不明確,但與鄰接之層(例如,中間層)的密接性提高而解析性更優異。 <Pigment> From the viewpoint of the visibility of the exposed portion and the non-exposed portion, and the pattern visibility and resolution after development, the photosensitive composition may contain a color having a maximum absorption wavelength of 450 nm or more and a maximum absorption wavelength of 400 nm to 780 nm during color development. A dye whose absorption wavelength is changed by acid, alkali, or free radicals (hereinafter also referred to as "dye N"). When the dye N is contained, although the detailed mechanism is not clear, the adhesiveness with the adjacent layer (for example, the intermediate layer) improves and resolution becomes more excellent.

色素的“最大吸收波長藉由酸、鹼或自由基而發生變化”可以指處於顯色狀態之色素藉由酸、鹼或自由基而脫色之態樣、處於脫色狀態之色素藉由酸、鹼或自由基而顯色之態樣及處於顯色狀態之色素變為其他色相的顯色狀態之態樣中的任一態樣。 具體而言,色素N可以為藉由曝光由脫色狀態發生變化而顯色之化合物及藉由曝光由顯色狀態發生變化而脫色之化合物中的任一種。在上述的情況下,可以為藉由曝光而在感光性組成物層內產生酸、鹼或自由基且該等起作用,從而顯色或脫色的狀態發生變化之色素,亦可以為感光性組成物層內的狀態(例如,pH等)藉由酸、鹼或自由基發生變化而顯色或脫色的狀態發生變化之色素。又,亦可以為不經過曝光而直接接受酸、鹼或自由基作為刺激而顯色或脫色的狀態發生變化之色素。 The "maximum absorption wavelength of the pigment is changed by acid, alkali or free radical" can refer to the state that the pigment in the color development state is decolorized by acid, alkali or free radical, and the pigment in the decolorized state is decolorized by acid or alkali. Any of the state in which the color is developed by free radicals and the state in which the pigment in the color state changes to another color state. Specifically, the dye N may be any of a compound that develops color by changing from a decolorized state by exposure and a compound that decolorizes by changing from a color-developed state by exposure. In the above case, it may be a pigment that generates acid, alkali, or free radicals in the photosensitive composition layer by exposure, and these acts to change the state of color development or decolorization, or it may be a photosensitive composition. A pigment in which the state (for example, pH, etc.) in the material layer is changed to develop or decolorize due to changes in acid, alkali, or free radicals. In addition, it may be a pigment that undergoes a change in the state of color development or decolorization by directly being stimulated by an acid, an alkali, or a free radical without exposure to light.

其中,從曝光部及非曝光部的可見性及解析性的觀點而言,色素N係最大吸收波長藉由酸或自由基而發生變化之色素為較佳,最大吸收波長藉由自由基而發生變化之色素為更佳。 從曝光部及非曝光部的可見性及解析性的觀點而言,感光性組成物包含最大吸收波長藉由自由基而發生變化之色素作為色素N及光自由基聚合起始劑這兩者為較佳。又,從曝光部及非曝光部的可見性的觀點而言,色素N為藉由酸、鹼或自由基而顯色之色素為較佳。 Among them, from the viewpoint of the visibility and resolution of the exposed part and the non-exposed part, dye N is a dye whose maximum absorption wavelength is changed by acid or free radicals, and the maximum absorption wavelength is generated by free radicals. Varying pigments are more preferred. From the viewpoint of the visibility and resolution of the exposed part and the non-exposed part, the photosensitive composition contains a dye whose maximum absorption wavelength is changed by radicals as a dye N and a photoradical polymerization initiator. better. Moreover, it is preferable that dye N is a dye which develops color by acid, alkali, or a radical from the viewpoint of the visibility of an exposure part and a non-exposure part.

作為色素N的顯色機構,例如可以舉出自由基反應性色素、酸反應性色素或鹼反應性色素(例如,無色色素等)藉由向感光性組成物中添加光自由基聚合起始劑、光陽離子聚合起始劑(光酸產生劑)或光鹼產生劑並進行曝光之後由光自由基聚合起始劑、光陽離子聚合起始劑或光鹼產生劑產生之自由基、酸或鹼而顯色之態樣。As the color development mechanism of the dye N, for example, a radical-reactive dye, an acid-reactive dye, or an alkali-reactive dye (for example, a leuco dye, etc.) , photocationic polymerization initiator (photoacid generator) or photobase generator and free radicals, acids or bases generated by photoradical polymerization initiators, photocationic polymerization initiators or photobase generators after exposure And the appearance of color.

從曝光部及非曝光部的可見性的觀點而言,作為色素N的顯色時的波長範圍400~780nm中的最大吸收波長,波長550nm以上為較佳,波長550~700nm為更佳,波長550~650nm為進一步較佳。 又,色素N可以具有1個或2個以上顯色時的波長範圍400~780nm中的最大吸收波長。當色素N具有2個以上顯色時的波長範圍400~780nm中之最大吸收波長時,2個以上的最大吸收波長中吸光度最高的最大吸收波長為波長450nm以上即可。 From the viewpoint of the visibility of the exposed part and the non-exposed part, as the maximum absorption wavelength in the wavelength range of 400 to 780 nm in the color development of the dye N, a wavelength of 550 nm or more is preferable, and a wavelength of 550 to 700 nm is more preferable. 550-650 nm is still more preferable. In addition, the dye N may have one or more maximum absorption wavelengths in the wavelength range of 400 to 780 nm for color development. When the dye N has two or more maximum absorption wavelengths in the wavelength range of 400 to 780 nm for color development, the maximum absorption wavelength with the highest absorbance among the two or more maximum absorption wavelengths may be at least 450 nm.

色素N的最大吸收波長能夠藉由在大氣環境下使用分光光度計:UV3100(Shimadzu Corporation製造)在波長400~780nm的範圍測量包含色素N之溶液(液溫25℃)的透射光譜並檢測光的強度成為極小之波長(最大吸收波長)而測量。The maximum absorption wavelength of pigment N can be measured by measuring the transmission spectrum of a solution (liquid temperature 25° C.) containing pigment N in the wavelength range of 400 to 780 nm and detecting the intensity of light by using a spectrophotometer: UV3100 (manufactured by Shimadzu Corporation) in an atmospheric environment. Intensity is measured at an extremely small wavelength (maximum absorption wavelength).

作為藉由曝光而顯色或脫色之色素,例如可以舉出無色化合物。 作為藉由曝光而脫色之色素,例如可以舉出無色化合物、二芳基甲烷系色素、㗁𠯤系色素、口山口星系色素、亞胺基萘醌系色素、偶氮次甲基系色素及蒽醌系色素。 作為色素N,從曝光部及非曝光部的可見性的觀點而言,無色化合物為較佳。 As a coloring matter which develops or decolorizes by exposure, a colorless compound is mentioned, for example. Examples of dyes that decolorize by exposure include leuco compounds, diarylmethane-based dyes, 㗁𠯤-based dyes, Kuchi Yamaguchi-based dyes, iminonaphthoquinone-based dyes, azomethine-based dyes, and anthracene-based dyes. Quinone pigments. As the dye N, a colorless compound is preferable from the viewpoint of the visibility of the exposed portion and the non-exposed portion.

作為無色化合物,例如可以舉出具有三芳基甲烷骨架之無色化合物(三芳基甲烷系色素)、具有螺旋哌喃骨架之無色化合物(螺旋哌喃系色素)、具有螢光黃母體骨架之無色化合物(螢光黃母體系色素)、具有二芳基甲烷骨架之無色化合物(二芳基甲烷系色素)、具有羅丹明內醯胺骨架之無色化合物(羅丹明內醯胺系色素)、具有吲哚基酞內酯骨架之無色化合物(吲哚基酞內酯系色素)及具有無色金黃胺骨架之無色化合物(無色金黃胺系色素)。 其中,三芳基甲烷系色素或螢光黃母體系色素為較佳,具有三苯基甲烷骨架之無色化合物(三苯基甲烷系色素)或螢光黃母體系色素為更佳。 As the colorless compound, for example, a colorless compound having a triarylmethane skeleton (triarylmethane dye), a colorless compound having a helicopyran skeleton (helicopyran dye), and a colorless compound having a fluorescent yellow mother skeleton ( Fluorescent yellow parent system pigment), colorless compound with diarylmethane skeleton (diarylmethane pigment), colorless compound with rhodamine lactam skeleton (rhodamine lactamide pigment), indolyl A colorless compound with a phthalide skeleton (indolylphthalide pigment) and a colorless compound with a colorless aureamine skeleton (colorless aureamine pigment). Among them, triarylmethane-based pigments or fluorescent yellow parent system pigments are preferred, and colorless compounds (triphenylmethane-based pigments) with triphenylmethane skeletons or fluorescent yellow parent system pigments are more preferred.

從曝光部及非曝光部的可見性的觀點而言,無色化合物具有內酯環、亞磺內酯環(sultine ring)或磺內酯環為較佳。藉此,能夠使無色化合物所具有之內酯環、亞磺內酯環或磺內酯環與由光自由基聚合起始劑產生之自由基或由光陽離子聚合起始劑產生之酸進行反應使無色化合物變為閉環狀態而使其脫色,或者使無色化合物變為開環狀態而使其顯色。作為無色化合物,具有內酯環、亞磺內酯環或磺內酯環且內酯環、亞磺內酯環或磺內酯環藉由自由基或酸開環而顯色之化合物為較佳,具有內酯環且內酯環藉由自由基或酸開環而顯色之化合物為更佳。The colorless compound preferably has a lactone ring, a sultone ring, or a sultone ring from the viewpoint of the visibility of the exposed portion and the non-exposed portion. Thereby, the lactone ring, sultone ring or sultone ring of the colorless compound can be reacted with the free radical generated by the photoradical polymerization initiator or the acid generated by the photocationic polymerization initiator Decolorize a colorless compound by closing its ring, or develop a color by opening its ring. As a colorless compound, a compound having a lactone ring, a sultone ring or a sultone ring and the lactone ring, a sultone ring or a sultone ring is colored by free radicals or acid ring opening is preferable , a compound that has a lactone ring and the lactone ring is opened by free radicals or acid to develop color is more preferred.

作為色素N,例如可以舉出染料及無色化合物。 作為染料,例如可以舉出亮綠(brilliant green)、乙基紫、甲基綠、結晶紫、鹼性品紅(basic fuchsine)、甲基紫2B、喹納啶紅(quinaldine red)、孟加拉玫瑰紅(rose bengal)、米塔尼爾黃(metanil yellow)、百里酚磺酞(thymol sulfonphthalein)、二甲酚(xylenol)藍、甲基橙、對甲基紅、剛果紅、苯并紅紫素(benzopurpurine)4B、α-萘基紅、尼羅藍(nile blue)2B、尼羅藍A、甲基紫、孔雀綠(malachite green)、副品紅(parafuchsin)、維多利亞純藍(victoria pure blue)-萘磺酸鹽、維多利亞純藍BOH(Hodogaya Chemical Co.,Ltd.製造)、油藍#603(Orient Chemical Industries Co.,Ltd.製造)、油粉紅#312(Orient Chemical Industries Co.,Ltd.製造)、油紅5B(Orient Chemical Industries Co.,Ltd.製造)、油猩紅(oil scarlet)#308(Orient Chemical Industries Co.,Ltd.製造)、油紅OG(Orient Chemical Industries Co.,Ltd.製造)、油紅RR(Orient Chemical Industries Co.,Ltd.製造)、油綠#502(Orient Chemical Industries Co.,Ltd.製造)、史必隆紅(spilon red)BEH特殊(Hodogaya Chemical Co.,Ltd.製造)、間甲酚紫、甲酚紅、羅丹明B、羅丹明6G、磺基羅丹明B、金黃胺、4-對二乙基胺基苯基亞胺基萘醌、2-羧基苯胺基-4-對二乙基胺基苯基亞胺基萘醌、2-羧基硬脂基胺基-4-對-N,N-雙(羥基乙基)胺基-苯基亞胺基萘醌、1-苯基-3-甲基-4-對二乙基胺基苯基亞胺基-5-吡唑啉酮及1-β-萘基-4-對二乙基胺基苯基亞胺基-5-吡唑啉酮。 Examples of the dye N include dyes and colorless compounds. Examples of dyes include brilliant green, ethyl violet, methyl green, crystal violet, basic fuchsine, methyl violet 2B, quinaldine red, rose bengal Rose bengal, metanil yellow, thymol sulfonphthalein, xylenol blue, methyl orange, p-methyl red, Congo red, benzorubin (benzopurpurine) 4B, α-naphthyl red, nile blue (nile blue) 2B, nile blue A, methyl violet, malachite green, parafuchsin, victoria pure blue )-Naphthalenesulfonate, Victoria Pure Blue BOH (manufactured by Hodogaya Chemical Co., Ltd.), Oil Blue #603 (manufactured by Orient Chemical Industries Co., Ltd.), Oil Pink #312 (manufactured by Orient Chemical Industries Co., Ltd. .), oil red 5B (manufactured by Orient Chemical Industries Co., Ltd.), oil scarlet (oil scarlet) #308 (manufactured by Orient Chemical Industries Co., Ltd.), oil red OG (manufactured by Orient Chemical Industries Co., Ltd. .), oil red RR (manufactured by Orient Chemical Industries Co., Ltd.), oil green #502 (manufactured by Orient Chemical Industries Co., Ltd.), spilon red (manufactured by Orient Chemical Industries Co., Ltd.) BEH special (Hodogaya Chemical Co., Ltd. Manufactured), m-cresyl violet, cresyl red, rhodamine B, rhodamine 6G, sulforhodamine B, auretamine, 4-p-diethylaminophenyliminonaphthoquinone, 2-carboxyanilino -4-p-diethylaminophenyliminonaphthoquinone, 2-carboxystearylamino-4-p-N,N-bis(hydroxyethyl)amino-phenyliminonaphthoquinone , 1-phenyl-3-methyl-4-p-diethylaminophenylimino-5-pyrazolone and 1-β-naphthyl-4-p-diethylaminophenylene Amino-5-pyrazolone.

作為無色化合物,例如可以舉出p,p’,p”-六甲基三胺基三苯基甲烷(無色結晶紫)、Pergascript Blue SRB(Ciba-Geigy公司製造)、結晶紫內酯、孔雀綠內酯、苯甲醯無色亞甲基藍、2-(N-苯基-N-甲基胺基)-6-(N-對甲苯基-N-乙基)胺基螢光黃母體、2-苯胺基-3-甲基-6-(N-乙基-對甲苯胺基)螢光黃母體、3,6-二甲氧基螢光黃母體、3-(N,N-二乙基胺基)-5-甲基-7-(N,N-二苄基胺基)螢光黃母體、3-(N-環己基-N-甲基胺基)-6-甲基-7-苯胺基螢光黃母體、3-(N,N-二乙基胺基)-6-甲基-7-苯胺基螢光黃母體、3-(N,N-二乙基胺基)-6-甲基-7-茬胺基螢光黃母體、3-(N,N-二乙基胺基)-6-甲基-7-氯螢光黃母體、3-(N,N-二乙基胺基)-6-甲氧基-7-胺基螢光黃母體、3-(N,N-二乙基胺基)-7-(4-氯苯胺基)螢光黃母體、3-(N,N-二乙基胺基)-7-氯螢光黃母體、3-(N,N-二乙基胺基)-7-苄基胺基螢光黃母體、3-(N,N-二乙基胺基)-7,8-苯并螢光黃母體、3-(N,N-二丁基胺基)-6-甲基-7-苯胺基螢光黃母體、3-(N,N-二丁基胺基)-6-甲基-7-茬胺基螢光黃母體、3-哌啶基-6-甲基-7-苯胺基螢光黃母體、3-吡咯啶基-6-甲基-7-苯胺基螢光黃母體、3,3-雙(1-乙基-2-甲基吲哚-3-基)酞內酯、3,3-雙(1-正丁基-2-甲基吲哚-3-基)酞內酯、3,3-雙(對二甲基胺基苯基)-6-二甲基胺基酞內酯、3-(4-二乙基胺基-2-乙氧基苯基)-3-(1-乙基-2-甲基吲哚-3-基)-4-氮雜酞內酯、3-(4-二乙基胺基苯基)-3-(1-乙基-2-甲基吲哚-3-基)酞內酯及3’,6’-雙(二苯基胺基)螺異苯并呋喃-1(3H),9’-[9H]口山口星-3-酮。Examples of colorless compounds include p,p',p"-hexamethyltriaminotriphenylmethane (colorless crystal violet), Pergascript Blue SRB (manufactured by Ciba-Geigy), crystal violet lactone, malachite green Lactone, benzoyl leuco methylene blue, 2-(N-phenyl-N-methylamino)-6-(N-p-tolyl-N-ethyl)amino fluorescent yellow precursor, 2-anilino -3-Methyl-6-(N-ethyl-p-toluidyl) fluorescent yellow precursor, 3,6-dimethoxy fluorescent yellow precursor, 3-(N,N-diethylamino) -5-methyl-7-(N,N-dibenzylamino) fluorescent yellow precursor, 3-(N-cyclohexyl-N-methylamino)-6-methyl-7-anilinofluorescent Luminous yellow precursor, 3-(N,N-diethylamino)-6-methyl-7-anilinofluorescent yellow precursor, 3-(N,N-diethylamino)-6-methyl -7-stibamidofluorescent yellow precursor, 3-(N,N-diethylamino)-6-methyl-7-chlorofluorescent yellow precursor, 3-(N,N-diethylamino )-6-methoxy-7-amino fluorescent yellow precursor, 3-(N,N-diethylamino)-7-(4-chloroanilino) fluorescent yellow precursor, 3-(N, N-diethylamino)-7-chlorofluorescent yellow precursor, 3-(N,N-diethylamino)-7-benzylamino fluorescent yellow precursor, 3-(N,N-di Ethylamino)-7,8-benzofluorescent yellow precursor, 3-(N,N-dibutylamino)-6-methyl-7-anilinofluorescent yellow precursor, 3-(N, N-dibutylamino)-6-methyl-7-stibamidofluorescent yellow precursor, 3-piperidinyl-6-methyl-7-anilinyl fluorescent yellow precursor, 3-pyrrolidinyl- 6-Methyl-7-anilinofluorescent yellow precursor, 3,3-bis(1-ethyl-2-methylindol-3-yl)phthalide, 3,3-bis(1-n-butyl -2-methylindol-3-yl)phthalide, 3,3-bis(p-dimethylaminophenyl)-6-dimethylaminophthalide, 3-(4-di Ethylamino-2-ethoxyphenyl)-3-(1-ethyl-2-methylindol-3-yl)-4-azaphthalide, 3-(4-diethyl Aminophenyl)-3-(1-ethyl-2-methylindol-3-yl)phthalide and 3',6'-bis(diphenylamino)spiroisobenzofuran-1 (3H), 9'-[9H]koukousing-3-one.

作為色素N,從曝光部及非曝光部的可見性、顯影後的圖案可見性及解析性優異的觀點而言,最大吸收波長藉由自由基而發生變化之色素為較佳,藉由自由基而顯色之色素為更佳。 作為色素N,無色結晶紫、結晶紫內酯、亮綠或維多利亞純藍-萘磺酸鹽為較佳。 As the dye N, a dye whose maximum absorption wavelength is changed by radicals is preferable from the viewpoint of the visibility of the exposed part and the non-exposed part, the visibility of the pattern after development, and the resolution. And the color pigment is better. As the dye N, leuco crystal violet, crystal violet lactone, brilliant green or Victoria pure blue-naphthalenesulfonate are preferable.

色素N可以單獨使用一種或者使用兩種以上。 從曝光部及非曝光部的可見性以及顯影後的圖案可見性及解析性優異之觀點而言,色素N的含量相對於感光性組成物的總固體成分為0.1質量%以上為較佳,0.1~10.0質量%為更佳,0.1~5.0質量%為進一步較佳,0.1~1.0質量%為特佳。 Pigment N can be used alone or in combination of two or more. From the viewpoint of the visibility of the exposed portion and the non-exposed portion, and the pattern visibility and resolution after development, the content of the pigment N is preferably 0.1% by mass or more with respect to the total solid content of the photosensitive composition, and 0.1% by mass is preferable. -10.0 mass % is more preferable, 0.1-5.0 mass % is still more preferable, and 0.1-1.0 mass % is especially preferable.

色素N的含量係指使感光性組成物的總固體成分中所包含之色素N全部成為顯色狀態時之色素的含量。以下,以藉由自由基而顯色之色素為例子,對色素N的含量的定量方法進行說明。 製備向甲基乙基酮(100mL)中溶解色素N(0.001g)而成之溶液及溶解色素N(0.01g)而成之溶液。向所得到之各溶液中加入光自由基聚合起始劑(Irgacure OXE01,BASF Japan Ltd.製造),並照射波長365nm的光,藉此產生自由基而使所有色素N成為顯色狀態。然後,在大氣環境下,使用分光光度計(UV3100,Shimadzu Corporation製造)測量液溫為25℃的各溶液的吸光度,並製作校準曲線。 接著,代替色素N而將感光性組成物的總固體成分(3g)溶解於甲基乙基酮中,除此以外,利用與上述相同的方法測量使色素全部顯色之溶液的吸光度。依據校準曲線,由所得到之包含感光性組成物的總固體成分(3g)之溶液的吸光度算出感光性組成物的總固體成分(3g)中所包含之色素N的含量。“感光性組成物的總固體成分(3g)”的含義與感光性組成物層3g相同。 The content of the dye N means the content of the dye when all the dye N contained in the total solid content of the photosensitive composition is in a colored state. Hereinafter, a method for quantifying the content of the dye N will be described by taking a dye that develops color by radicals as an example. A solution obtained by dissolving dye N (0.001 g) in methyl ethyl ketone (100 mL) and a solution obtained by dissolving dye N (0.01 g) were prepared. A photoradical polymerization initiator (Irgacure OXE01, manufactured by BASF Japan Ltd.) was added to each of the obtained solutions, and irradiated with light having a wavelength of 365 nm, thereby generating radicals and bringing all the dyes N into a colored state. Then, under an atmospheric environment, the absorbance of each solution at a liquid temperature of 25° C. was measured using a spectrophotometer (UV3100, manufactured by Shimadzu Corporation), and a calibration curve was prepared. Next, except that the total solid content (3 g) of the photosensitive composition was dissolved in methyl ethyl ketone instead of the dye N, the absorbance of the solution in which all the dye was developed was measured by the same method as above. Based on the calibration curve, the content of the dye N contained in the total solid content (3 g) of the photosensitive composition was calculated from the absorbance of the obtained solution containing the total solid content (3 g) of the photosensitive composition. The "total solid content (3 g) of the photosensitive composition" has the same meaning as that of the photosensitive composition layer 3 g.

<熱交聯性化合物> 從所得到之硬化膜的強度及所得到之未硬化膜的黏著性的觀點而言,感光性組成物可以包含熱交聯性化合物。 後述之具有乙烯性不飽和基之熱交聯性化合物不作為聚合性化合物來處理,而作為熱交聯性化合物來處理。 作為熱交聯性化合物,例如可以舉出羥甲基化合物及封端異氰酸酯化合物,從所得到之硬化膜的強度及所得到之未硬化膜的黏著性的觀點而言,封端異氰酸酯化合物為較佳。 封端異氰酸酯化合物與羥基及羧基進行反應,因此例如當樹脂及/或聚合性化合物具有羥基及羧基中的至少一者時,所形成之膜的親水性下降,具有將使感光性組成物層硬化而成之膜用作硬化膜時的功能增強之傾向。 “封端異氰酸酯化合物”係指具有異氰酸酯的異氰酸酯基被封端劑保護之結構之化合物。 <Heat-crosslinkable compound> From the viewpoint of the strength of the cured film to be obtained and the adhesiveness of the uncured film to be obtained, the photosensitive composition may contain a heat-crosslinkable compound. The heat-crosslinkable compound which has an ethylenically unsaturated group mentioned later is handled not as a polymeric compound, but as a heat-crosslinkable compound. Examples of thermally crosslinkable compounds include methylol compounds and blocked isocyanate compounds, and blocked isocyanate compounds are preferred from the viewpoint of the strength of the obtained cured film and the adhesiveness of the obtained uncured film. good. The blocked isocyanate compound reacts with the hydroxyl group and the carboxyl group. Therefore, for example, when the resin and/or the polymerizable compound has at least one of the hydroxyl group and the carboxyl group, the hydrophilicity of the film formed will decrease, which will harden the photosensitive composition layer. The resulting film tends to enhance its function when used as a hardened film. "Blocked isocyanate compound" means a compound having a structure in which the isocyanate group of isocyanate is protected by a blocking agent.

作為封端異氰酸酯化合物的解離溫度,100~160℃為較佳,130~150℃為更佳。 作為封端異氰酸酯化合物的解離溫度的測量方法,例如可以舉出使用示差掃描熱量計(例如,DSC6200,Seiko Instruments Inc.製造等),藉由DSC(Differential scanning calorimetry:差示掃描熱量法)分析,將伴隨封端異氰酸酯化合物的脫保護反應之吸熱峰值的溫度作為解離度之測量方法。 The dissociation temperature of the blocked isocyanate compound is preferably from 100 to 160°C, more preferably from 130 to 150°C. As a method of measuring the dissociation temperature of the blocked isocyanate compound, for example, using a differential scanning calorimeter (for example, DSC6200, manufactured by Seiko Instruments Inc., etc.), by DSC (Differential scanning calorimetry: differential scanning calorimetry) analysis, The temperature of the endothermic peak accompanying the deprotection reaction of the blocked isocyanate compound was used as a measure of the degree of dissociation.

作為解離溫度為100~160℃的封端劑,例如可以舉出丙二酸二酯等活性亞甲基化合物及肟化合物。 作為丙二酸二酯,例如可以舉出丙二酸二甲酯、丙二酸二乙酯、丙二酸二正丁酯及丙二酸二2-乙基己酯。 作為肟化合物,例如可以舉出甲醛肟、乙醛肟、乙醯肟、甲基乙基酮肟及環己酮肟等在分子中具有-C(=N-OH)-所表示之結構之化合物。 其中,作為解離溫度為100~160℃的封端劑,從保存穩定性的觀點而言,肟化合物為較佳。 As a terminal blocking agent whose dissociation temperature is 100-160 degreeC, active methylene compounds, such as malonate diester, and an oxime compound are mentioned, for example. Examples of the malonate diester include dimethyl malonate, diethyl malonate, di-n-butyl malonate and di-2-ethylhexyl malonate. Examples of oxime compounds include compounds having a structure represented by -C(=N-OH)- in the molecule, such as formaldehyde oxime, acetaldehyde oxime, acetoxime, methyl ethyl ketone oxime, and cyclohexanone oxime. . Among them, an oxime compound is preferred as a terminal blocking agent having a dissociation temperature of 100 to 160° C. from the viewpoint of storage stability.

從改善膜的脆性及提高與被轉印體的密接力的觀點而言,封端異氰酸酯化合物具有異氰脲酸酯結構為較佳。 具有異氰脲酸酯結構之封端異氰酸酯化合物例如可藉由將六亞甲基二異氰酸酯進行異氰脲酸酯化以對其加以保護而得到。 其中,從與不具有肟結構之化合物相比容易將解離溫度調整在較佳的範圍且能夠減少顯影殘渣之觀點而言,作為具有異氰脲酸酯結構之封端異氰酸酯化合物,具有將肟化合物用作封端劑之肟結構之化合物為較佳。 It is preferable that the blocked isocyanate compound has an isocyanurate structure from the viewpoint of improving the brittleness of the film and improving the adhesive force with the transfer target. A blocked isocyanate compound having an isocyanurate structure can be obtained, for example, by isocyanurating and protecting hexamethylene diisocyanate. Among them, as a blocked isocyanate compound having an isocyanurate structure, there are oxime compounds having Compounds with an oxime structure used as a blocking agent are preferred.

封端異氰酸酯化合物可以具有聚合性基。 作為聚合性基,例如其含義與上述聚合性化合物所具有之聚合性基相同,較佳態樣亦相同。 The blocked isocyanate compound may have a polymerizable group. As a polymeric group, the meaning is the same as the polymeric group which the said polymeric compound has, for example, and a preferable aspect is also the same.

作為封端異氰酸酯化合物,例如可以舉出AOI-BM、MOI-BM及MOI-BP等Karenz系列(註冊商標)(SHOWA DENKO K.K.製造);TPA-B80E及WT32-B75P等封端型的Duranate系列(註冊商標)(Asahi Kasei Chemicals Corporation製造)。 作為封端異氰酸酯化合物,下述化合物為較佳。 Examples of blocked isocyanate compounds include Karenz series (registered trademarks) such as AOI-BM, MOI-BM, and MOI-BP (manufactured by SHOWA DENKO K.K.); blocked duranate series such as TPA-B80E and WT32-B75P ( registered trademark) (manufactured by Asahi Kasei Chemicals Corporation). As the blocked isocyanate compound, the following compounds are preferred.

[化學式16]

Figure 02_image031
[chemical formula 16]
Figure 02_image031

熱交聯性化合物可以單獨使用一種或者使用兩種以上。 熱交聯性化合物的含量相對於感光性組成物的總固體成分為1.0~50.0質量%為較佳,5.0~30.0質量%為更佳。 The heat-crosslinkable compound can be used individually by 1 type, or may use 2 or more types. The content of the heat-crosslinkable compound is preferably 1.0 to 50.0% by mass, more preferably 5.0 to 30.0% by mass, relative to the total solid content of the photosensitive composition.

<顏料> 感光性組成物可以包含顏料。 當感光性組成物包含顏料時,感光性組成物層對應於著色樹脂層。 近年來,電子設備所具有之液晶顯示窗上有時為了保護液晶顯示窗而安裝有在透明的玻璃基板等的背面周緣部形成有黑色的框狀遮光層之蓋玻璃(cover glass)。為了形成這種遮光層,可以使用著色樹脂層。 作為顏料,只要根據所期望的色相適當選擇即可,例如可以舉出黑色顏料、白色顏料以及除黑色及白色以外的彩色顏料,當形成黑色系的圖案時,作為顏料,黑色顏料為較佳。 <Pigment> The photosensitive composition may contain a pigment. When the photosensitive composition contains a pigment, the photosensitive composition layer corresponds to the colored resin layer. In recent years, a cover glass having a black frame-shaped light-shielding layer formed on the back peripheral portion of a transparent glass substrate or the like may be attached to a liquid crystal display window of an electronic device in order to protect the liquid crystal display window. In order to form such a light-shielding layer, a colored resin layer can be used. As a pigment, what is necessary is just to select suitably according to a desired hue, For example, black pigment, a white pigment, and color pigments other than black and white are mentioned. When forming a black pattern, a black pigment is preferable as a pigment.

(黑色顏料) 作為黑色顏料,例如可以舉出公知的黑色顏料(例如,有機顏料及無機顏料等)。 其中,從光學濃度的觀點而言,作為黑色顏料,碳黑、氧化鈦、碳化鈦、氧化鐵或石墨為較佳,碳黑為更佳。作為碳黑,從表面電阻的觀點而言,表面的至少一部分被樹脂包覆之表面修飾碳黑為較佳。 (black pigment) As a black pigment, a well-known black pigment (for example, an organic pigment, an inorganic pigment, etc.) is mentioned, for example. Among these, carbon black, titanium oxide, titanium carbide, iron oxide, or graphite are preferred as the black pigment, and carbon black is more preferred, from the viewpoint of optical density. As the carbon black, a surface-modified carbon black in which at least a part of the surface is covered with a resin is preferable from the viewpoint of surface resistance.

從分散穩定性的觀點而言,黑色顏料的粒徑(數量平均粒徑)為0.001~0.1μm為較佳,0.01~0.08μm為更佳。 “粒徑”係指從用電子顯微鏡拍攝之顏料粒子的照片圖像求出顏料粒子的面積並考慮與顏料粒子的面積相同面積的圓時的圓的直徑。又,“數量平均粒徑”係指對任意100個粒子求出上述粒徑並對所求出之100個粒徑進行平均而得到之平均值。 From the viewpoint of dispersion stability, the particle diameter (number average particle diameter) of the black pigment is preferably 0.001 to 0.1 μm, more preferably 0.01 to 0.08 μm. "Particle size" refers to the diameter of a circle when the area of the pigment particle is calculated from a photographic image of the pigment particle taken with an electron microscope and a circle having the same area as the area of the pigment particle is considered. In addition, the "number average particle diameter" means the average value obtained by obtaining the said particle diameter for arbitrary 100 particles, and averaging the obtained 100 particle diameters.

作為白色顏料,例如可以舉出無機顏料、日本特開2005-007765號公報的[0015]及[0114]段落中所記載之白色顏料。 作為無機顏料,氧化鈦、氧化鋅、鋅鋇白、輕質碳酸鈣、白碳、氧化鋁、氫氧化鋁或硫酸鋇為較佳,氧化鈦或氧化鋅為更佳,氧化鈦為進一步較佳,金紅石型或銳鈦礦型的氧化鈦為特佳,金紅石型的氧化鈦為最佳。 又,氧化鈦的表面可以實施二氧化矽處理、氧化鋁處理、二氧化鈦處理、二氧化鋯處理或有機物處理,亦可以實施該等中的兩種以上的處理。藉此,氧化鈦的觸媒活性得到抑制,能夠改善耐熱性及褪光性。 從減薄加熱後的感光性組成物層的厚度之觀點而言,作為對氧化鈦的表面之表面處理,實施氧化鋁處理及二氧化鋯處理中的至少一者為較佳,實施氧化鋁處理及二氧化鋯處理這兩者為更佳。 Examples of white pigments include inorganic pigments and white pigments described in paragraphs [0015] and [0114] of JP-A-2005-007765. As the inorganic pigment, titanium oxide, zinc oxide, lithopone, light calcium carbonate, white carbon, aluminum oxide, aluminum hydroxide or barium sulfate are preferred, titanium oxide or zinc oxide is more preferred, titanium oxide is further preferred , rutile-type or anatase-type titanium oxide is particularly preferred, and rutile-type titanium oxide is most preferred. In addition, the surface of titanium oxide may be treated with silica, alumina, titania, zirconia, or organic matter, or two or more of these treatments may be performed. Thereby, the catalytic activity of titanium oxide is suppressed, and heat resistance and delustering properties can be improved. From the viewpoint of reducing the thickness of the photosensitive composition layer after heating, it is preferable to perform at least one of alumina treatment and zirconia treatment as the surface treatment on the surface of titanium oxide, and to perform alumina treatment and zirconium dioxide treatment are both better.

當將感光性組成物層作為著色樹脂層時,從轉印性的觀點而言,感光性組成物包含除黑色顏料及白色顏料以外的彩色顏料亦為較佳。 作為彩色顏料的粒徑(數量平均粒徑),從分散性更優異的觀點而言,0.1μm以下為較佳,0.08μm以下為更佳。下限為10nm以上為較佳。 作為彩色顏料,例如可以舉出維多利亞純藍BO(Color Index(比色指數)(以下,亦稱為“C.I.”)42595)、金黃胺(C.I.41000)、脂肪黑(fat black)HB(C.I.26150)、莫諾萊特黃(monolight yellow)GT(C.I.顏料黃12)、永久黃(permanent yellow)GR(C.I.顏料黃17)、永久黃HR(C.I.顏料黃83)、永久胭脂紅(permanent carmine)FBB(C.I.顏料紅146)、赫斯塔巴姆紅(hostaperm red)ESB(C.I.顏料紫19)、永久寶石紅(permanent ruby)FBH(C.I.顏料紅11)、法斯特爾粉紅(pastel pink)B司普拉(supura)(C.I.顏料紅81)、莫納斯特拉堅牢藍(monastral fast blue)(C.I.顏料藍15)、莫諾萊特堅牢黑B(C.I.顏料黑1)及碳、C.I.顏料紅97、C.I.顏料紅122、C.I.顏料紅149、C.I.顏料紅168、C.I.顏料紅177、C.I.顏料紅180、C.I.顏料紅192、C.I.顏料紅215、C.I.顏料綠7、C.I.顏料藍15:1、C.I.顏料藍15:4、C.I.顏料藍22、C.I.顏料藍60、C.I.顏料藍64及C.I.顏料紫23,C.I.顏料紅177為較佳。 When the photosensitive composition layer is used as the colored resin layer, it is also preferable that the photosensitive composition contains color pigments other than black pigments and white pigments from the viewpoint of transferability. The particle size (number average particle size) of the color pigment is preferably 0.1 μm or less, more preferably 0.08 μm or less, from the viewpoint of better dispersibility. The lower limit is preferably at least 10 nm. Examples of color pigments include Victoria Pure Blue BO (Color Index (Color Index) (hereinafter, also referred to as "C.I.") 42595), auretamine (C.I. 41000), fat black (fat black) HB (C.I. 26150 ), monolight yellow GT (C.I. Pigment Yellow 12), permanent yellow GR (C.I. Pigment Yellow 17), permanent yellow HR (C.I. Pigment Yellow 83), permanent carmine (permanent carmine) FBB (C.I. Pigment Red 146), Hestaperm Red (hostaperm red) ESB (C.I. Pigment Violet 19), Permanent Ruby (permanent ruby) FBH (C.I. Pigment Red 11), Fastel Pink (pastel pink) B Supura (C.I. Pigment Red 81), monastral fast blue (C.I. Pigment Blue 15), Monolette Fast Black B (C.I. Pigment Black 1) and Carbon, C.I. Pigment Red 97, C.I. Pigment Red 122, C.I. Pigment Red 149, C.I. Pigment Red 168, C.I. Pigment Red 177, C.I. Pigment Red 180, C.I. Pigment Red 192, C.I. Pigment Red 215, C.I. Pigment Green 7, C.I. Pigment Blue 15:1, C.I. Pigment Blue 15:4, C.I. Pigment Blue 22, C.I. Pigment Blue 60, C.I. Pigment Blue 64, C.I. Pigment Violet 23, and C.I. Pigment Red 177 are preferred.

顏料可以單獨使用一種,亦可以使用兩種以上。 顏料的含量相對於感光性組成物的總固體成分超過3.0質量%且40.0質量%以下為較佳,超過3.0質量%且35.0質量%以下為更佳,超過5.0質量%且35.0質量%以下為進一步較佳,10.0~35.0質量%為特佳。 One kind of pigment may be used alone, or two or more kinds may be used. The content of the pigment is preferably more than 3.0% by mass and not more than 40.0% by mass relative to the total solid content of the photosensitive composition, more preferably more than 3.0% by mass and not more than 35.0% by mass, and more preferably more than 5.0% by mass and not more than 35.0% by mass. More preferably, 10.0 to 35.0% by mass is particularly preferred.

當感光性組成物包含除黑色顏料以外的顏料(例如,白色顏料及彩色顏料等)時,除黑色顏料以外的顏料的含量相對於黑色顏料的總質量為30.0質量%以下為較佳,1.0~20.0質量%為更佳,3.0~15.0質量%為進一步較佳。When the photosensitive composition contains pigments other than black pigments (for example, white pigments and color pigments, etc.), the content of pigments other than black pigments is preferably 30.0% by mass or less relative to the total mass of black pigments, and 1.0~ 20.0 mass % is more preferable, and 3.0-15.0 mass % is further more preferable.

當感光性組成物包含黑色顏料時,黑色顏料(較佳為碳黑)以顏料分散液的形態導入到感光性組成物中為較佳。 分散液可以為藉由將事先混合黑色顏料和顏料分散劑而得到之混合物加入到有機溶劑(或媒液(vehicle))中並利用分散機分散而製備者。顏料分散劑只要根據顏料及溶劑選擇即可,例如能夠使用市售的分散劑。 “媒液”係指製成顏料分散液時使顏料分散之媒質部分。上述媒液為液狀,包含以分散狀態保持黑色顏料之黏合劑成分和溶解及稀釋黏合劑成分之溶劑成分(有機溶劑)。 When the photosensitive composition contains a black pigment, it is preferred that the black pigment (preferably carbon black) be introduced into the photosensitive composition in the form of a pigment dispersion. The dispersion liquid may be prepared by adding a mixture obtained by mixing a black pigment and a pigment dispersant in advance to an organic solvent (or vehicle) and dispersing with a disperser. What is necessary is just to select a pigment dispersant according to a pigment and a solvent, For example, a commercially available dispersant can be used. "Vehicle" refers to the part of the medium that disperses the pigment when preparing the pigment dispersion. The above-mentioned vehicle is liquid and contains a binder component that maintains the black pigment in a dispersed state and a solvent component (organic solvent) that dissolves and dilutes the binder component.

作為分散機,例如可以舉出捏合機、輥磨機、磨碎機(attritor)、超級研磨機(super mill)、溶解器、均質混合器及砂磨機等公知的分散機。 又,亦可以藉由機械式磨碎,利用摩擦力進行微粉碎。作為分散機及微粉碎,例如可以舉出“顏料詞典”(朝倉邦造著、第一版、朝倉書店、2000年、438頁、310頁)的記載。 Examples of the dispersing machine include known dispersing machines such as a kneader, a roll mill, an attritor, a super mill, a dissolver, a homomixer, and a sand mill. In addition, fine pulverization can also be carried out by mechanical grinding using frictional force. Examples of the disperser and fine pulverization include the descriptions in "Paint Dictionary" (by Kunizo Asakura, first edition, Asakura Shoten, 2000, pages 438 and 310).

<其他添加劑> 感光性組成物除了上述成分以外,根據需要可以包含其他添加劑。 作為其他添加劑,例如可以舉出除聚合物A1以外的樹脂、自由基聚合抑制劑、抗氧化劑(例如,菲尼酮等)、防銹劑(例如,苯并三唑類及羧基苯并三唑類等)、增感劑、界面活性劑、塑化劑、雜環狀化合物(例如,三唑等)、吡啶類(例如,異菸鹼醯胺等)及嘌呤鹼(例如,腺嘌呤等)。 又,作為其他添加劑,例如可以舉出金屬氧化物粒子、鏈轉移劑、抗氧化劑、分散劑、酸增殖劑、顯影促進劑、導電性纖維、紫外線吸收劑、增黏劑、交聯劑、有機或無機的沈澱防止劑及日本特開2014-085643號公報的[0165]~[0184]段落,該等內容被編入本說明書中。 其他添加劑可以單獨使用一種或者使用兩種以上。 <Other additives> The photosensitive composition may contain other additives as needed in addition to the above components. As other additives, for example, resins other than polymer A1, radical polymerization inhibitors, antioxidants (for example, phenidone, etc.), rust inhibitors (for example, benzotriazoles and carboxybenzotriazoles, etc.) class, etc.), sensitizers, surfactants, plasticizers, heterocyclic compounds (e.g., triazoles, etc.), pyridines (e.g., isonicotinamide, etc.), and purine bases (e.g., adenine, etc.) . In addition, examples of other additives include metal oxide particles, chain transfer agents, antioxidants, dispersants, acid multiplying agents, development accelerators, conductive fibers, ultraviolet absorbers, thickeners, crosslinking agents, organic or inorganic precipitation inhibitors and paragraphs [0165] to [0184] of JP-A-2014-085643, the contents of which are incorporated in this specification. Other additives may be used alone or in combination of two or more.

<自由基聚合抑制劑> 作為自由基聚合抑制劑,例如可以舉出日本專利第4502784號公報的[0018]段落中所記載之熱聚合抑制劑,啡噻𠯤、啡㗁𠯤或4-甲氧基苯酚為較佳。 作為自由基聚合抑制劑,例如可以舉出萘胺、氯化銅(I)、亞硝基苯基羥基胺鋁鹽及二苯基亞硝基胺,從不損害感光性組成物的靈敏度之觀點而言,亞硝基苯基羥基胺鋁鹽為較佳。 自由基聚合抑制劑的含量相對於感光性組成物的總固體成分為0.001~5.0質量%為較佳,0.01~3.0質量%為更佳,0.02~2.0質量%為進一步較佳。 自由基聚合抑制劑的含量相對於聚合性化合物的總質量為0.005~5.0質量%為較佳,0.01~3.0質量%為更佳,0.01~1.0質量%為進一步較佳。 <Radical polymerization inhibitor> Examples of radical polymerization inhibitors include thermal polymerization inhibitors described in paragraph [0018] of Japanese Patent No. 4502784, among which phenthiazine, phenanthrene, or 4-methoxyphenol are preferable. Examples of radical polymerization inhibitors include naphthylamine, copper (I) chloride, nitrosophenylhydroxylamine aluminum salt, and diphenylnitrosoamine, from the viewpoint of not impairing the sensitivity of the photosensitive composition For this purpose, aluminum salt of nitrosophenylhydroxylamine is preferred. The content of the radical polymerization inhibitor is preferably from 0.001 to 5.0% by mass, more preferably from 0.01 to 3.0% by mass, and still more preferably from 0.02 to 2.0% by mass, relative to the total solid content of the photosensitive composition. The content of the radical polymerization inhibitor is preferably from 0.005 to 5.0% by mass, more preferably from 0.01 to 3.0% by mass, and still more preferably from 0.01 to 1.0% by mass, based on the total mass of the polymerizable compound.

(苯并三唑類) 作為苯并三唑類,例如可以舉出1,2,3-苯并三唑、1-氯-1,2,3-苯并三唑、雙(N-2-乙基己基)胺基亞甲基-1,2,3-苯并三唑、雙(N-2-乙基己基)胺基亞甲基-1,2,3-甲苯基三唑及雙(N-2-羥基乙基)胺基亞甲基-1,2,3-苯并三唑。 (benzotriazoles) Examples of benzotriazoles include 1,2,3-benzotriazole, 1-chloro-1,2,3-benzotriazole, bis(N-2-ethylhexyl)amino Methyl-1,2,3-benzotriazole, bis(N-2-ethylhexyl)aminomethylene-1,2,3-tolyltriazole and bis(N-2-hydroxyethyl ) Aminomethylene-1,2,3-benzotriazole.

(羧基苯并三唑類) 作為羧基苯并三唑類,例如可以舉出4-羧基-1,2,3-苯并三唑、5-羧基-1,2,3-苯并三唑、N-(N,N-二-2-乙基己基)胺基亞甲基羧基苯并三唑、N-(N,N-二-2-羥基乙基)胺基亞甲基羧基苯并三唑及N-(N,N-二-2-乙基己基)胺基伸乙基羧基苯并三唑。 作為羧基苯并三唑類的市售品,例如可以舉出CBT-1(JOHOKU CHEMICAL CO.,LTD.製造)。 (Carboxybenzotriazoles) Examples of carboxybenzotriazoles include 4-carboxy-1,2,3-benzotriazole, 5-carboxy-1,2,3-benzotriazole, N-(N,N-di -2-ethylhexyl)aminomethylenecarboxybenzotriazole, N-(N,N-di-2-hydroxyethyl)aminomethylenecarboxybenzotriazole and N-(N,N - Di-2-ethylhexyl)aminoethylenylcarboxybenzotriazole. As a commercial item of carboxybenzotriazoles, CBT-1 (made by JOHOKU CHEMICAL CO., LTD.) is mentioned, for example.

自由基聚合抑制劑、苯并三唑類及羧基苯并三唑類的合計含量相對於感光性組成物的總固體成分為0.01~3.0質量%為較佳,0.05~1.0質量%為更佳。當上述合計含量為0.01質量%以上時,感光性組成物的保存穩定性更優異。另一方面,當上述合計含量為3.0質量%以下時,靈敏度的維持及染料的脫色的抑制更優異。The total content of the radical polymerization inhibitor, benzotriazoles, and carboxybenzotriazoles is preferably from 0.01 to 3.0% by mass, more preferably from 0.05 to 1.0% by mass, based on the total solid content of the photosensitive composition. When the said total content is 0.01 mass % or more, the storage stability of a photosensitive composition becomes more excellent. On the other hand, when the above-mentioned total content is 3.0% by mass or less, the maintenance of sensitivity and the suppression of decolorization of the dye are more excellent.

(增感劑) 作為增感劑,例如可以舉出公知的增感劑、染料及顏料。 作為增感劑,例如可以舉出二烷基胺基二苯甲酮化合物、吡唑啉化合物、蒽化合物、香豆素化合物、氧蒽酮(xanthone)化合物、噻噸酮(thioxanthone)化合物、吖啶酮化合物、㗁唑化合物、苯并㗁唑化合物、噻唑化合物、苯并噻唑化合物、三唑化合物(例如,1,2,4-三唑等)、茋化合物、三𠯤化合物、噻吩化合物、萘二甲醯亞胺化合物、三芳基胺化合物及胺基吖啶化合物。 (sensitizer) As a sensitizer, a well-known sensitizer, dye, and a pigment are mentioned, for example. Examples of sensitizers include dialkylaminobenzophenone compounds, pyrazoline compounds, anthracene compounds, coumarin compounds, xanthone (xanthone) compounds, thioxanthone (thioxanthone) compounds, Pyridone compound, oxazole compound, benzoxazole compound, thiazole compound, benzothiazole compound, triazole compound (for example, 1,2,4-triazole, etc.), stilbene compound, trioxazole compound, thiophene compound, naphthalene Diformimide compounds, triarylamine compounds and aminoacridine compounds.

從提高對光源之靈敏度及藉由聚合速度與鏈轉移的平衡提高硬化速度之觀點而言,增感劑的含量相對於感光性組成物的總固體成分為0.01~5.0質量%為較佳,0.05~1.0質量%為更佳。From the standpoint of improving the sensitivity to the light source and improving the hardening speed by balancing the polymerization speed and chain transfer, the content of the sensitizer is preferably 0.01 to 5.0% by mass relative to the total solid content of the photosensitive composition, and 0.05 ~1.0% by mass is more preferable.

(界面活性劑) 作為界面活性劑,例如可以舉出日本專利第4502784號公報的[0017]段落及日本特開2009-237362號公報的[0060]~[0071]段落中所記載之界面活性劑。 (surfactant) Examples of the surfactant include those described in paragraph [0017] of Japanese Patent No. 4502784 and paragraphs [0060] to [0071] of Japanese Patent Application Laid-Open No. 2009-237362.

作為界面活性劑,非離子系界面活性劑、氟系界面活性劑或矽酮系界面活性劑為較佳。 作為氟系界面活性劑,例如可以舉出MEGAFACE F-171、F-172、F-173、F-176、F-177、F-141、F-142、F-143、F-144、F-437、F-475、F-477、F-479、F-482、F-551-A、F-552、F-554、F-555-A、F-556、F-557、F-558、F-559、F-560、F-561、F-565、F-563、F-568、F-575、F-780、EXP、MFS-330、MFS-578、MFS-579、MFS-586、MFS-587、R-41、R-41-LM、R-01、R-40、R-40-LM、RS-43、TF-1956、RS-90、R-94及DS-21(以上為DIC Corporation製造);Fluorad FC430、FC431及FC171(以上為Sumitomo 3M Limited製造);Surflon S-382、SC-101、SC-103、SC-104、SC-105、SC-1068、SC-381、SC-383、S-393及KH-40(以上為AGC Inc.製造);PolyFox PF636、PF656、PF6320、PF6520及PF7002(以上為OMNOVA Solutions Inc.製造);Ftergent 710FL、710FM、610FM、601AD、601ADH2、602A、215M、245F、251、212M、250、209F、222F、208G、710LA、710FS、730LM、650AC、681及683(以上為Neos Corporation製造)。 As the surfactant, a nonionic surfactant, a fluorine-based surfactant, or a silicone-based surfactant is preferable. Examples of fluorine-based surfactants include MEGAFACE F-171, F-172, F-173, F-176, F-177, F-141, F-142, F-143, F-144, F- 437, F-475, F-477, F-479, F-482, F-551-A, F-552, F-554, F-555-A, F-556, F-557, F-558, F-559, F-560, F-561, F-565, F-563, F-568, F-575, F-780, EXP, MFS-330, MFS-578, MFS-579, MFS-586, MFS-587, R-41, R-41-LM, R-01, R-40, R-40-LM, RS-43, TF-1956, RS-90, R-94 and DS-21 (the above are DIC Corporation); Fluorad FC430, FC431, and FC171 (the above are manufactured by Sumitomo 3M Limited); Surflon S-382, SC-101, SC-103, SC-104, SC-105, SC-1068, SC-381, SC -383, S-393 and KH-40 (manufactured by AGC Inc. above); PolyFox PF636, PF656, PF6320, PF6520 and PF7002 (manufactured by OMNOVA Solutions Inc. above); Ftergent 710FL, 710FM, 610FM, 601AD, 601ADH2, 602A, 215M, 245F, 251, 212M, 250, 209F, 222F, 208G, 710LA, 710FS, 730LM, 650AC, 681, and 683 (manufactured by Neos Corporation).

又,作為氟系界面活性劑,具有含有包含氟原子之官能基之分子結構且施加熱時包含氟原子之官能基部分被斷裂而氟原子揮發之丙烯酸系化合物亦為較佳。 作為這種氟系界面活性劑,例如可以舉出DIC Corporation製造之MEGAFACE DS系列(化學工業日報(2016年2月22日)及日經產業新聞(2016年2月23日))。 又,作為氟系界面活性劑,使用具有氟化烷基或氟化伸烷基醚基之含氟原子之乙烯醚化合物與親水性乙烯醚化合物的共聚物亦為較佳。 作為氟系界面活性劑,亦能夠使用封端聚合物。 作為氟系界面活性劑,含氟高分子化合物亦為較佳,該含氟高分子化合物包含來自於具有氟原子之(甲基)丙烯酸酯化合物之構成單元和來自於具有2個以上(較佳為5個以上)伸烷氧基(較佳為伸乙氧基、伸丙氧基)之(甲基)丙烯酸酯化合物之構成單元。 又,作為氟系界面活性劑,例如還可以舉出在側鏈中具有乙烯性不飽和基之含氟聚合物,可以舉出MEGAFACE RS-101、RS-102、RS-718K及RS-72-K(以上為DIC Corporation製造)。 Also, as the fluorine-based surfactant, an acrylic compound having a molecular structure containing a functional group containing a fluorine atom, wherein the functional group containing a fluorine atom is partially broken when heat is applied, and the fluorine atom volatilizes is also preferable. Examples of such fluorine-based surfactants include MEGAFACE DS series manufactured by DIC Corporation (Chemical Industry Daily (February 22, 2016) and Nikkei Sangyo Shimbun (February 23, 2016)). Furthermore, it is also preferable to use a copolymer of a fluorine atom-containing vinyl ether compound having a fluorinated alkyl group or a fluorinated alkylene ether group and a hydrophilic vinyl ether compound as the fluorine-based surfactant. As the fluorine-based surfactant, a blocked polymer can also be used. As a fluorine-based surfactant, a fluorine-containing polymer compound is also preferred, and the fluorine-containing polymer compound includes a structural unit derived from a (meth)acrylate compound having a fluorine atom and a structure unit derived from a (meth)acrylate compound having two or more (preferably It is a constituent unit of (meth)acrylate compound having 5 or more) alkoxyl groups (preferably ethoxyl groups, propoxyl groups). In addition, examples of fluorine-based surfactants include fluorine-containing polymers having ethylenically unsaturated groups in side chains, such as MEGAFACE RS-101, RS-102, RS-718K, and RS-72- K (the above are manufactured by DIC Corporation).

從提高環境適性之觀點而言,作為氟系界面活性劑,來自於全氟辛酸(PFOA)及全氟辛烷磺酸(PFOS)等具有碳數為7以上的直鏈狀全氟烷基之化合物的替代材料之界面活性劑為較佳。From the viewpoint of improving environmental suitability, fluorine-based surfactants are derived from compounds having a linear perfluoroalkyl group with 7 or more carbon atoms, such as perfluorooctanoic acid (PFOA) and perfluorooctanesulfonic acid (PFOS). The surfactant of the alternative material is preferred.

作為非離子系界面活性劑,例如可以舉出甘油、三羥甲基丙烷、三羥甲基乙烷、該等的乙氧基化物及丙氧基化物(例如,甘油丙氧基化物及甘油乙氧基化物等)、聚氧乙烯月桂基醚、聚氧乙烯硬脂基醚、聚氧乙烯油基醚、聚氧乙烯辛基苯基醚、聚氧乙烯壬基苯基醚、聚乙二醇二月桂酸酯、聚乙二醇二硬脂酸酯以及脫水山梨糖醇脂肪酸酯;Pluronic(註冊商標)L10、L31、L61、L62、10R5、17R2及25R2(以上為BASF公司製造);Tetronic 304、701、704、901、904及150R1(以上為BASF公司製造);Solsperse 20000(以上為Lubrizol Japan Limited.製造);NCW-101、NCW-1001及NCW-1002(以上為FUJIFILM Wako Pure Chemical Corporation製造);PIONIN D-6112、D-6112-W及D-6315(以上為Takemoto Oil & Fat Co.,Ltd.製造);Olfine E1010、Surfynol 104、400及440(以上為Nissin Chemical Co.,Ltd.製造)。Examples of nonionic surfactants include glycerin, trimethylolpropane, trimethylolethane, and their ethoxylates and propoxylates (for example, glycerin propoxylate and glycerol ethyl oxides, etc.), polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene oleyl ether, polyoxyethylene octylphenyl ether, polyoxyethylene nonylphenyl ether, polyethylene glycol Dilaurate, polyethylene glycol distearate, and sorbitan fatty acid ester; Pluronic (registered trademark) L10, L31, L61, L62, 10R5, 17R2, and 25R2 (manufactured by BASF Corporation); Tetronic 304, 701, 704, 901, 904 and 150R1 (the above are manufactured by BASF Corporation); Solsperse 20000 (the above are manufactured by Lubrizol Japan Limited); NCW-101, NCW-1001 and NCW-1002 (the above are manufactured by FUJIFILM Wako Pure Chemical Corporation Manufactured); PIONIN D-6112, D-6112-W and D-6315 (manufactured by Takemoto Oil & Fat Co., Ltd. above); Olfine E1010, Surfynol 104, 400 and 440 (manufactured by Nissin Chemical Co., Ltd. .manufacture).

作為矽酮系界面活性劑,例如可以舉出由矽氧烷鍵形成之直鏈狀聚合物以及在側鏈及/或末端導入有有機基之改質矽氧烷聚合物。Examples of silicone-based surfactants include linear polymers formed of siloxane bonds and modified siloxane polymers having organic groups introduced into side chains and/or terminals.

作為矽酮系界面活性劑,具體而言,可以舉出DOWSIL 8032 ADDITIVE、Toray Silicone DC3PA、Toray Silicone SH7PA、Toray Silicone DC11PA、Toray Silicone SH21PA、Toray Silicone SH28PA、Toray Silicone SH29PA、Toray Silicone SH30PA及Toray Silicone SH8400(以上為Dow Corning Toray Co.,Ltd.製造);X-22-4952、X-22-4272、X-22-6266、KF-351A、K354L、KF-355A、KF-945、KF-640、KF-642、KF-643、X-22-6191、X-22-4515、KF-6004、KP-341、KF-6001及KF-6002(以上為Shin-Etsu Silicone Co.,Ltd.製造);F-4440、TSF-4300、TSF-4445、TSF-4460及TSF-4452(以上為Momentive Performance Materials Inc.製造);BYK307、BYK323及BYK330(以上為BYK Chemie公司製造)。Examples of silicone-based surfactants include DOWSIL 8032 ADDITIVE, Toray Silicone DC3PA, Toray Silicone SH7PA, Toray Silicone DC11PA, Toray Silicone SH21PA, Toray Silicone SH28PA, Toray Silicone SH29PA, Toray Silicone SH30PA, and Toray Silicone SH8400. (The above are manufactured by Dow Corning Toray Co., Ltd.); X-22-4952, X-22-4272, X-22-6266, KF-351A, K354L, KF-355A, KF-945, KF-640, KF-642, KF-643, X-22-6191, X-22-4515, KF-6004, KP-341, KF-6001 and KF-6002 (the above are manufactured by Shin-Etsu Silicone Co., Ltd.); F-4440, TSF-4300, TSF-4445, TSF-4460, and TSF-4452 (the above are manufactured by Momentive Performance Materials Inc.); BYK307, BYK323, and BYK330 (the above are manufactured by BYK Chemie).

界面活性劑的含量相對於感光性組成物的總固體成分為0.01~3.0質量%為較佳,0.01~1.0質量%為更佳,0.05~0.8質量%為進一步較佳。The content of the surfactant is preferably from 0.01 to 3.0% by mass, more preferably from 0.01 to 1.0% by mass, and still more preferably from 0.05 to 0.8% by mass, relative to the total solid content of the photosensitive composition.

作為塑化劑及雜環狀化合物,例如可以舉出國際公開第2018/179640號的[0097]~[0103]段落及[0111]~[0118]段落中所記載之化合物。Examples of the plasticizer and the heterocyclic compound include compounds described in paragraphs [0097] to [0103] and paragraphs [0111] to [0118] of International Publication No. 2018/179640.

<雜質> 感光性組成物有時包含雜質。 作為雜質,例如可以舉出金屬雜質或其離子、鹵化物離子、殘餘有機溶劑、殘餘單體及水。 <Impurities> The photosensitive composition may contain impurities. Examples of impurities include metal impurities or ions thereof, halide ions, residual organic solvents, residual monomers, and water.

(金屬雜質及鹵化物離子) 作為金屬雜質,例如可以舉出鈉、鉀、鎂、鈣、鐵、錳、銅、鋁、鈦、鉻、鈷、鎳、鋅、錫及該等的離子以及鹵化物離子。 其中,從容易混入之觀點而言,鈉離子、鉀離子及鹵化物離子較佳為設為下述含量。 金屬雜質係與可以包含於轉印膜中之上述粒子(例如,金屬氧化物粒子)不同的化合物。 (Metal impurities and halide ions) Examples of metal impurities include sodium, potassium, magnesium, calcium, iron, manganese, copper, aluminum, titanium, chromium, cobalt, nickel, zinc, tin, and their ions and halide ions. Among these, sodium ions, potassium ions, and halide ions are preferably contained at the following contents from the viewpoint of easy mixing. The metal impurities are compounds different from the above-mentioned particles (for example, metal oxide particles) that may be contained in the transfer film.

金屬雜質的含量相對於感光性組成物的總固體成分為80質量ppm以下為較佳,10質量ppm以下為更佳,2質量ppm以下為進一步較佳。下限相對於感光性組成物的總固體成分為1質量ppb以上為較佳,0.1質量ppm以上為更佳。The content of metal impurities is preferably 80 mass ppm or less, more preferably 10 mass ppm or less, and still more preferably 2 mass ppm or less with respect to the total solid content of the photosensitive composition. The lower limit is preferably at least 1 mass ppb with respect to the total solid content of the photosensitive composition, more preferably at least 0.1 mass ppm.

作為調整雜質的含量之方法,例如可以舉出選擇雜質的含量少者作為感光性組成物的原料之方法以及在形成感光性組成物時防止雜質的混入之方法及洗滌去除之方法。 雜質的含量例如能夠藉由ICP發光分光分析法、原子吸光分光法及離子層析法等公知的方法來定量。 As a method of adjusting the content of impurities, for example, a method of selecting a material with a low content of impurities as a raw material of the photosensitive composition, a method of preventing contamination of impurities when forming a photosensitive composition, and a method of washing and removing them can be mentioned. The content of impurities can be quantified by known methods such as ICP emission spectrometry, atomic absorption spectrometry, and ion chromatography, for example.

(殘餘單體) 感光性組成物有時包含來自於感光性組成物所包含之聚合物(樹脂)的各構成單元之殘餘單體。 從圖案化性及可靠性的觀點而言,殘餘單體的含量相對於聚合物的總質量為5000質量ppm以下為較佳,2000質量ppm以下為更佳,500質量ppm以下為進一步較佳。下限相對於聚合物的總質量為1質量ppm以上為較佳,10質量ppm以上為更佳。 從圖案化性及可靠性的觀點而言,來自於聚合物的各構成單元之殘餘單體相對於感光性組成物的總固體成分為3000質量ppm以下為較佳,600質量ppm以下為更佳,100質量ppm以下為進一步較佳。下限相對於感光性組成物的總固體成分為0.1質量ppm以上為較佳,1質量ppm以上為更佳。 作為調整殘餘單體的含量之方法,例如可以舉出調整上述雜質的含量之方法。 殘餘單體的含量能夠利用液相層析及氣相層析等公知的方法來測量。 (residual monomer) The photosensitive composition may contain residual monomers derived from each structural unit of the polymer (resin) contained in the photosensitive composition. From the viewpoint of patternability and reliability, the residual monomer content is preferably at most 5,000 mass ppm, more preferably at most 2,000 mass ppm, and still more preferably at most 500 mass ppm, based on the total mass of the polymer. The lower limit is preferably at least 1 mass ppm with respect to the total mass of the polymer, more preferably at least 10 mass ppm. From the viewpoint of patternability and reliability, the residual monomer derived from each constituent unit of the polymer is preferably 3000 mass ppm or less, more preferably 600 mass ppm or less, based on the total solid content of the photosensitive composition , 100 mass ppm or less is still more preferable. The lower limit is preferably 0.1 mass ppm or more with respect to the total solid content of the photosensitive composition, more preferably 1 mass ppm or more. As a method of adjusting the content of residual monomers, for example, a method of adjusting the content of the above-mentioned impurities is mentioned. The content of residual monomers can be measured by known methods such as liquid chromatography and gas chromatography.

〔第2實施形態的感光性組成物〕 以下,對第2實施形態的感光性組成物進行說明。第2實施形態的感光性組成物為負型的感光性組成物為較佳。 第2實施形態的感光性組成物除了代替聚合物A1而使用聚合物A2之點和進一步包含化合物E之點以外,能夠設為與已敘述的第1實施形態的感光性組成物相同的組成。因此,以下僅對聚合物A2及化合物E進行說明。 [Photosensitive composition of the second embodiment] Hereinafter, the photosensitive composition of 2nd Embodiment is demonstrated. It is preferable that the photosensitive composition of 2nd Embodiment is a negative photosensitive composition. The photosensitive composition of 2nd Embodiment can be made into the same composition as the photosensitive composition of 1st Embodiment already described except the point which used polymer A2 instead of polymer A1, and the point which further contains compound E. Therefore, only polymer A2 and compound E will be described below.

<聚合物A2> 感光性組成物包含聚合物A2。聚合物A2為包含具有羧基之構成單元A1c之樹脂。作為具有羧基之構成單元A1c,具體而言,可以舉出來自於後述之第1單體之構成單元。 作為聚合物A2,鹼可溶性樹脂為較佳。 <Polymer A2> The photosensitive composition contains polymer A2. Polymer A2 is resin containing structural unit A1c which has a carboxyl group. As structural unit A1c which has a carboxyl group, the structural unit derived from the 1st monomer mentioned later is mentioned specifically,. As the polymer A2, alkali-soluble resins are preferred.

從抑制曝光時焦點位置產生偏移時的線寬粗細及解析度的惡化之觀點而言,聚合物A2包含來自於具有芳香族烴基之單體之構成單元為較佳。 作為上述芳香族烴基,例如可以舉出可以具有取代基之苯基及可以具有取代基之芳烷基。 來自於具有芳香族烴基之單體之構成單元的含量相對於聚合物A2的所有構成單元為10質量%以上為較佳,20質量%以上為更佳,30質量%以上為進一步較佳。上限相對於聚合物A2的所有構成單元為80質量%以下為較佳,60質量%以下為更佳,55質量%以下為進一步較佳。當感光性組成物包含複數種聚合物A2時,來自於具有芳香族烴基之單體之構成單元的含量的質量平均值在上述範圍內為較佳。 It is preferable that polymer A2 contains a structural unit derived from a monomer having an aromatic hydrocarbon group from the viewpoint of suppressing deterioration of line width and resolution when the focal position shifts during exposure. As said aromatic hydrocarbon group, the phenyl group which may have a substituent, and the aralkyl group which may have a substituent are mentioned, for example. The content of the structural unit derived from a monomer having an aromatic hydrocarbon group is preferably at least 10% by mass, more preferably at least 20% by mass, and still more preferably at least 30% by mass, based on all the structural units of the polymer A2. The upper limit is preferably 80% by mass or less, more preferably 60% by mass or less, and still more preferably 55% by mass or less with respect to all the constituent units of the polymer A2. When the photosensitive composition contains several kinds of polymers A2, it is preferable that the mass average value of the content of the structural unit derived from the monomer which has an aromatic hydrocarbon group exists in the said range.

作為具有芳香族烴基之單體,例如可以舉出具有芳烷基之單體、苯乙烯及能夠聚合之苯乙烯衍生物(例如,甲基苯乙烯、乙烯基甲苯、三級丁氧基苯乙烯、乙醯氧基苯乙烯、4-乙烯基苯甲酸、苯乙烯二聚物及苯乙烯三聚物等),具有芳烷基之單體或苯乙烯為較佳,苯乙烯為更佳。 當具有芳香族烴基之單體為苯乙烯時,來自於苯乙烯之構成單元的含量相對於聚合物A2的所有構成單元為10~80質量%為較佳,20~60質量%為更佳,30~55質量%為進一步較佳。當感光性組成物包含複數種聚合物A2時,來自於具有芳香族烴基之單體之構成單元的含量的質量平均值在上述範圍內為較佳。 As monomers having an aromatic hydrocarbon group, for example, monomers having an aralkyl group, styrene and polymerizable styrene derivatives (for example, methylstyrene, vinyltoluene, tertiary butoxystyrene , Acetyloxystyrene, 4-vinylbenzoic acid, styrene dimer and styrene trimer, etc.), monomers with aralkyl groups or styrene are preferred, and styrene is more preferred. When the monomer having an aromatic hydrocarbon group is styrene, the content of the structural units derived from styrene is preferably 10 to 80% by mass, more preferably 20 to 60% by mass, relative to all the structural units of the polymer A2, 30-55 mass % is more preferable. When the photosensitive composition contains several kinds of polymers A2, it is preferable that the mass average value of the content of the structural unit derived from the monomer which has an aromatic hydrocarbon group exists in the said range.

作為芳烷基,例如可以舉出可以具有取代基之苯基烷基(但是,苄基除外)及可以具有取代基之苄基,可以具有取代基之苄基為較佳。Examples of the aralkyl group include a phenylalkyl group which may have a substituent (except for a benzyl group) and a benzyl group which may have a substituent, and a benzyl group which may have a substituent is preferable.

作為具有苯基烷基之單體,例如可以舉出(甲基)丙烯酸苯基乙酯。As a monomer which has a phenylalkyl group, phenyl ethyl (meth)acrylate is mentioned, for example.

作為具有苄基之單體,例如可以舉出(甲基)丙烯酸苄酯及(甲基)丙烯酸氯苄酯等具有苄基之(甲基)丙烯酸酯;乙烯基苄基氯及乙烯基苄醇等具有苄基之乙烯基單體,具有苄基之(甲基)丙烯酸酯為較佳,(甲基)丙烯酸苄酯為更佳。 當具有芳香族烴基之單體為(甲基)丙烯酸苄酯時,來自於(甲基)丙烯酸苄酯之構成單元的含量相對於聚合物A2的所有構成單元為10~90質量%為較佳,20~80質量%為更佳,30~70質量%為進一步較佳。 Examples of monomers having a benzyl group include (meth)acrylates having a benzyl group such as benzyl (meth)acrylate and benzyl chloride (meth)acrylate; vinylbenzyl chloride and vinylbenzyl alcohol Among vinyl monomers having a benzyl group, benzyl (meth)acrylate is preferred, and benzyl (meth)acrylate is more preferred. When the monomer having an aromatic hydrocarbon group is benzyl (meth)acrylate, the content of constituent units derived from benzyl (meth)acrylate is preferably 10 to 90% by mass relative to all constituent units of polymer A2 , 20-80 mass % is more preferable, and 30-70 mass % is still more preferable.

當聚合物A2包含來自於具有芳香族烴基之單體之構成單元時,作為聚合物A2,藉由使具有芳香族烴基之單體與至少一種後述之第1單體聚合而得到之聚合物或藉由使具有芳香族烴基之單體、至少一種後述之第1單體及至少一種後述之第2單體聚合而得到之聚合物為較佳。When the polymer A2 includes a constituent unit derived from a monomer having an aromatic hydrocarbon group, as the polymer A2, a polymer obtained by polymerizing a monomer having an aromatic hydrocarbon group and at least one first monomer described later or A polymer obtained by polymerizing a monomer having an aromatic hydrocarbon group, at least one first monomer described below, and at least one second monomer described below is preferred.

當聚合物A2不包含來自於具有芳香族烴基之單體之構成單元時,作為聚合物A2,藉由使至少一種後述之第1單體聚合而得到為較佳,藉由使至少一種第1單體與至少一種後述之第2單體聚合而得到為更佳。When the polymer A2 does not contain a constituent unit derived from a monomer having an aromatic hydrocarbon group, it is preferable that the polymer A2 is obtained by polymerizing at least one first monomer described later, by making at least one first monomer It is more preferable that the monomer is obtained by polymerizing at least one second monomer described later.

第1單體為在分子中具有羧基之單體。 作為第1單體,例如可以舉出(甲基)丙烯酸、反丁烯二酸、桂皮酸、巴豆酸、衣康酸、4-乙烯基苯甲酸、順丁烯二酸酐及順丁烯二酸半酯,(甲基)丙烯酸為較佳。 來自於第1單體之構成單元的含量相對於聚合物A2的所有構成單元為5~50質量%為較佳,10~40質量%為更佳,10~30質量%為進一步較佳。 當上述含量為5質量%以上時,能夠實現優異的顯影性及邊緣熔融性的控制等。當上述含量為50質量%以下時,能夠實現光阻圖案的高解析性、捲邊形狀的控制及光阻圖案的高耐藥品性。 The first monomer is a monomer having a carboxyl group in the molecule. Examples of the first monomer include (meth)acrylic acid, fumaric acid, cinnamic acid, crotonic acid, itaconic acid, 4-vinylbenzoic acid, maleic anhydride, and maleic acid. Half ester, (meth)acrylic acid is preferred. The content of the structural unit derived from the first monomer is preferably 5 to 50% by mass, more preferably 10 to 40% by mass, and still more preferably 10 to 30% by mass, based on all the structural units of the polymer A2. When the above content is 5% by mass or more, excellent developability, control of edge melting properties, and the like can be achieved. When the above-mentioned content is 50% by mass or less, high resolution of the photoresist pattern, control of bead shape, and high chemical resistance of the photoresist pattern can be realized.

第2單體為非酸性且在分子中具有聚合性基之單體。 聚合性基的含義與後述之聚合性化合物所具有之聚合性基相同,較佳態樣亦相同。 作為第2單體,例如可以舉出(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸正丙酯、(甲基)丙烯酸異丙酯、(甲基)丙烯酸正丁酯、(甲基)丙烯酸異丁酯、(甲基)丙烯酸三級丁酯、(甲基)丙烯酸2-羥基乙酯、(甲基)丙烯酸2-羥基丙酯、(甲基)丙烯酸環己酯、(甲基)丙烯酸2-乙基己酯等(甲基)丙烯酸酯類;乙酸乙烯酯等乙烯醇的酯類;以及(甲基)丙烯腈等。 其中,(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸2-乙基己酯或(甲基)丙烯酸正丁酯為較佳,(甲基)丙烯酸甲酯或(甲基)丙烯酸乙酯為更佳。 來自於上述單體之構成單元的含量相對於聚合物A2的所有構成單元為1~80質量%為較佳,1~60質量%為更佳,1~50質量%為進一步較佳。 The second monomer is a non-acidic monomer having a polymerizable group in the molecule. The meaning of the polymerizable group is the same as that of the polymerizable group described later in the polymerizable compound, and the preferred aspects are also the same. Examples of the second monomer include methyl (meth)acrylate, ethyl (meth)acrylate, n-propyl (meth)acrylate, isopropyl (meth)acrylate, n-propyl (meth)acrylate, Butyl ester, isobutyl (meth)acrylate, tertiary butyl (meth)acrylate, 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, ring (meth)acrylate (Meth)acrylates such as hexyl ester and 2-ethylhexyl (meth)acrylate; esters of vinyl alcohol such as vinyl acetate; and (meth)acrylonitrile, etc. Among them, methyl (meth)acrylate, ethyl (meth)acrylate, 2-ethylhexyl (meth)acrylate or n-butyl (meth)acrylate are preferred, methyl (meth)acrylate or Ethyl (meth)acrylate is more preferred. The content of the structural units derived from the above-mentioned monomers is preferably 1 to 80% by mass, more preferably 1 to 60% by mass, and still more preferably 1 to 50% by mass, based on all the structural units of the polymer A2.

聚合物A2可以在側鏈中具有直鏈結構、分支結構及脂環結構中的任一種。 例如,藉由使用包含在側鏈中具有分支結構之基之單體或包含在側鏈中具有脂環結構之基之單體,能夠將分支結構或脂環結構導入到聚合物A2的側鏈中。具有脂環結構之基可以為單環及多環中的任一種。 “側鏈”係指從主鏈分支之原子團。“主鏈”係指在構成樹脂之高分子化合物的分子中相對最長的鍵結鏈。 作為包含在側鏈中具有分支結構之基之單體,例如可以舉出(甲基)丙烯酸異丙酯、(甲基)丙烯酸異丁酯、(甲基)丙烯酸二級丁酯、(甲基)丙烯酸三級丁酯、(甲基)丙烯酸異戊酯、(甲基)丙烯酸三級戊酯、(甲基)丙烯酸二級戊酯、(甲基)丙烯酸2-辛酯、(甲基)丙烯酸3-辛酯及(甲基)丙烯酸三級辛酯。 其中,(甲基)丙烯酸異丙酯、(甲基)丙烯酸異丁酯或甲基丙烯酸三級丁酯為較佳,甲基丙烯酸異丙酯或甲基丙烯酸三級丁酯為更佳。 作為包含在側鏈中具有脂環結構之基之單體,例如可以舉出具有單環的脂肪族烴基之單體及具有多環的脂肪族烴基之單體。又,可以舉出具有碳數5~20的脂環式烴基之(甲基)丙烯酸酯。 具體而言,可以舉出(甲基)丙烯酸(雙環〔2.2.1〕庚基-2)酯、(甲基)丙烯酸-1-金剛烷基酯、(甲基)丙烯酸-2-金剛烷基酯、(甲基)丙烯酸-3-甲基-1-金剛烷基酯、(甲基)丙烯酸-3,5-二甲基-1-金剛烷基酯、(甲基)丙烯酸-3-乙基金剛烷基酯、(甲基)丙烯酸-3-甲基-5-乙基-1-金剛烷基酯、(甲基)丙烯酸-3,5,8-三乙基-1-金剛烷基酯、(甲基)丙烯酸-3,5-二甲基-8-乙基-1-金剛烷基酯、(甲基)丙烯酸2-甲基-2-金剛烷基酯、(甲基)丙烯酸2-乙基-2-金剛烷基酯、(甲基)丙烯酸3-羥基-1-金剛烷基酯、(甲基)丙烯酸八氫-4,7-甲橋茚-5-基酯、(甲基)丙烯酸八氫-4,7-甲橋茚-1-基甲酯、(甲基)丙烯酸-1-薄荷腦基酯、(甲基)丙烯酸三環癸烷、(甲基)丙烯酸-3-羥基-2,6,6-三甲基-雙環〔3.1.1〕庚酯、(甲基)丙烯酸-3,7,7-三甲基-4-羥基-雙環〔4.1.0〕庚酯、(甲基)丙烯酸(降)莰基酯、(甲基)丙烯酸異莰基酯、(甲基)丙烯酸葑酯、(甲基)丙烯酸-2,2,5-三甲基環己酯及(甲基)丙烯酸環己酯。 其中,(甲基)丙烯酸環己酯、(甲基)丙烯酸(降)莰基酯、(甲基)丙烯酸異莰基酯、(甲基)丙烯酸-1-金剛烷基酯、(甲基)丙烯酸-2-金剛烷基酯、(甲基)丙烯酸葑酯、(甲基)丙烯酸-1-薄荷腦基酯或(甲基)丙烯酸三環癸烷為較佳,(甲基)丙烯酸環己酯、(甲基)丙烯酸(降)莰基酯、(甲基)丙烯酸異莰基酯、(甲基)丙烯酸-2-金剛烷基酯或(甲基)丙烯酸三環癸烷為更佳。 Polymer A2 may have any of a linear structure, a branched structure, and an alicyclic structure in a side chain. For example, by using a monomer containing a group having a branched structure in the side chain or a monomer containing a group having an alicyclic structure in the side chain, a branched structure or an alicyclic structure can be introduced into the side chain of polymer A2 middle. The group having an alicyclic structure may be either monocyclic or polycyclic. "Side chain" refers to a group of atoms branching from the main chain. "Main chain" refers to the relatively longest bonded chain in the molecules of the polymer compound constituting the resin. Examples of monomers containing a group having a branched structure in the side chain include isopropyl (meth)acrylate, isobutyl (meth)acrylate, secondary butyl (meth)acrylate, (meth)acrylate ) tertiary butyl acrylate, isopentyl (meth) acrylate, tertiary pentyl (meth) acrylate, secondary pentyl (meth) acrylate, 2-octyl (meth) acrylate, (meth) 3-octyl acrylate and tertiary octyl (meth)acrylate. Among them, isopropyl (meth)acrylate, isobutyl (meth)acrylate or tertiary butyl methacrylate is preferred, and isopropyl methacrylate or tertiary butyl methacrylate is more preferred. As a monomer containing the group which has an alicyclic structure in a side chain, the monomer which has a monocyclic aliphatic hydrocarbon group, and the monomer which has a polycyclic aliphatic hydrocarbon group are mentioned, for example. Moreover, (meth)acrylate which has an alicyclic hydrocarbon group with 5-20 carbon atoms is mentioned. Specifically, (meth)acrylate (bicyclo[2.2.1]heptyl-2), (meth)acrylate-1-adamantyl, (meth)acrylate-2-adamantyl Esters, 3-methyl-1-adamantyl (meth)acrylate, 3,5-dimethyl-1-adamantyl (meth)acrylate, 3-ethyl (meth)acrylate Adamantyl ester, 3-methyl-5-ethyl-1-adamantyl (meth)acrylate, 3,5,8-triethyl-1-adamantyl (meth)acrylate ester, 3,5-dimethyl-8-ethyl-1-adamantyl (meth)acrylate, 2-methyl-2-adamantyl (meth)acrylate, (meth)acrylic acid 2-Ethyl-2-adamantyl ester, 3-hydroxy-1-adamantyl (meth)acrylate, octahydro-4,7-inden-5-yl (meth)acrylate, ( Octahydro-4,7-inden-1-ylmethyl methacrylate, 1-menthol (meth)acrylate, tricyclodecane (meth)acrylate, (meth)acrylate- 3-Hydroxy-2,6,6-trimethyl-bicyclo[3.1.1]heptyl ester, (meth)acrylic acid-3,7,7-trimethyl-4-hydroxy-bicyclo[4.1.0]heptyl Esters, (nor)bornyl (meth)acrylate, isobornyl (meth)acrylate, fecundyl (meth)acrylate, 2,2,5-trimethylcyclohexyl (meth)acrylate and cyclohexyl (meth)acrylate. Among them, cyclohexyl (meth)acrylate, (nor)bornyl (meth)acrylate, isobornyl (meth)acrylate, 1-adamantyl (meth)acrylate, (meth) 2-adamantyl acrylate, fenzyl (meth)acrylate, 1-menthol (meth)acrylate or tricyclodecane (meth)acrylate are preferred, cyclohexyl (meth)acrylate (meth)acrylate, (nor)bornyl (meth)acrylate, isobornyl (meth)acrylate, 2-adamantyl (meth)acrylate, or tricyclodecane (meth)acrylate are more preferable.

從本發明的效果更優異的觀點而言,聚合物A2具有聚合性基為較佳,包含具有聚合性基之構成單元為更佳,包含在側鏈中具有乙烯性不飽和基之構成單元為進一步較佳。聚合物A2中的具有聚合性基之構成單元可以較佳地舉出在聚合物A1中舉出之具有聚合性基之構成單元。From the standpoint of more excellent effect of the present invention, it is preferable that polymer A2 has a polymerizable group, and it is more preferably composed of a constituent unit having a polymerizable group, and the constituent unit containing an ethylenically unsaturated group in a side chain is Further better. As the structural unit having a polymeric group in the polymer A2, preferably the structural unit having a polymeric group mentioned in the polymer A1 is mentioned.

聚合物A2的Tg為30~180℃為較佳,40~150℃為更佳,50~120℃為進一步較佳。The Tg of the polymer A2 is preferably from 30 to 180°C, more preferably from 40 to 150°C, and still more preferably from 50 to 120°C.

從本發明的效果更優異的觀點而言,聚合物A2的酸值為220mgKOH/g以下為較佳,200mgKOH/g以下為更佳,190mgKOH/g以下為進一步較佳,170mgKOH/g以下為特佳,150mgKOH/g以下為最佳。從本發明的效果更優異的觀點而言,下限為10mgKOH/g以上為較佳,50mgKOH/g以上為更佳,80mgKOH/g以上為進一步較佳,90mgKOH/g以上為特佳。 又,從本發明的效果更優異的觀點而言,聚合物A2的來自於羧基之酸值為220mgKOH/g以下為較佳,200mgKOH/g以下為更佳,190mgKOH/g以下為進一步較佳,170mgKOH/g以下為特佳,150mgKOH/g以下為最佳。從本發明的效果更優異的觀點而言,下限為10mgKOH/g以上為較佳,50mgKOH/g以上為更佳,80mgKOH/g以上為進一步較佳,90mgKOH/g以上為特佳。 上述的聚合物A2的酸值及聚合物A2中的來自於羧基之酸值能夠藉由與上述聚合物A1的酸值及聚合物A1中的來自於羧基之酸值相同的方法算出。 聚合物A2的酸值能夠利用聚合物A2所具有之構成單元的種類及/或包含酸基之構成單元的含量進行調整。 From the viewpoint of more excellent effects of the present invention, the acid value of polymer A2 is preferably 220 mgKOH/g or less, more preferably 200 mgKOH/g or less, still more preferably 190 mgKOH/g or less, and especially 170 mgKOH/g or less. Good, below 150mgKOH/g is the best. From the standpoint of more excellent effects of the present invention, the lower limit is preferably 10 mgKOH/g or more, more preferably 50 mgKOH/g or more, still more preferably 80 mgKOH/g or more, and particularly preferably 90 mgKOH/g or more. Also, from the viewpoint of more excellent effect of the present invention, the acid value derived from the carboxyl group of the polymer A2 is preferably 220 mgKOH/g or less, more preferably 200 mgKOH/g or less, and still more preferably 190 mgKOH/g or less. Below 170mgKOH/g is especially preferred, and below 150mgKOH/g is the best. From the standpoint of more excellent effects of the present invention, the lower limit is preferably 10 mgKOH/g or more, more preferably 50 mgKOH/g or more, still more preferably 80 mgKOH/g or more, and particularly preferably 90 mgKOH/g or more. The acid value of the above-mentioned polymer A2 and the acid value derived from the carboxyl group in the polymer A2 can be calculated by the same method as the acid value of the above-mentioned polymer A1 and the acid value derived from the carboxyl group in the polymer A1. The acid value of polymer A2 can be adjusted by the kind of the structural unit which polymer A2 has, and/or content of the structural unit containing an acid group.

當感光性組成物包含兩種以上的聚合物A2時,滿足上述酸值的範圍之聚合物A2的含量相對於所有聚合物A2為10~100質量%為較佳,60~100質量%為更佳,90~100質量%為進一步較佳。When the photosensitive composition contains two or more polymers A2, the content of the polymer A2 satisfying the range of the above-mentioned acid value is preferably 10 to 100% by mass, more preferably 60 to 100% by mass, based on all the polymers A2. Preferably, 90 to 100% by mass is more preferably.

作為聚合物A2的重量平均分子量,500,000以下為較佳,100,000以下為更佳,50,000以下為進一步較佳,30,000以下為特佳。作為聚合物A2的重量平均分子量,3,000以上為較佳,4,000以上為更佳,5,000以上為進一步較佳,10,000以上為特佳。 當重量平均分子量為500,000以下時,能夠提高解析性及顯影性。又,當重量平均分子量為3,000以上時,能夠控制顯影凝聚物的性狀以及轉印膜的邊緣熔融性及切屑性等未曝光膜的性狀。 聚合物A2的分散度為1.0~6.0為較佳,1.0~5.0為更佳,1.0~4.0為進一步較佳,1.0~3.0為特佳。 滿足上述重量平均分子量及/或分散度的範圍之聚合物A2進一步滿足如上述或後述的較佳要件亦為較佳。 當感光性組成物包含兩種以上的聚合物A2時,滿足上述重量平均分子量及/或分散度的範圍之聚合物A2的含量相對於所有聚合物A2為10~100質量%為較佳,60~100質量%為更佳,90~100質量%為進一步較佳。 The weight average molecular weight of the polymer A2 is preferably at most 500,000, more preferably at most 100,000, still more preferably at most 50,000, and particularly preferably at most 30,000. The weight average molecular weight of the polymer A2 is preferably at least 3,000, more preferably at least 4,000, still more preferably at least 5,000, and particularly preferably at least 10,000. When the weight average molecular weight is 500,000 or less, resolution and developability can be improved. Moreover, when the weight average molecular weight is 3,000 or more, the property of the image development aggregate and the property of an unexposed film, such as the edge melting property of a transfer film, and chipping property, can be controlled. The degree of dispersion of the polymer A2 is preferably 1.0 to 6.0, more preferably 1.0 to 5.0, still more preferably 1.0 to 4.0, and particularly preferably 1.0 to 3.0. It is also preferable that the polymer A2 which satisfies the ranges of the above-mentioned weight average molecular weight and/or dispersity further satisfies the above-mentioned or hereinafter-mentioned preferable requirements. When the photosensitive composition contains two or more polymers A2, the content of the polymer A2 satisfying the above range of weight average molecular weight and/or dispersity is preferably 10 to 100% by mass relative to all the polymers A2, 60 -100 mass % is more preferable, and 90-100 mass % is still more preferable.

聚合物A2可以單獨使用一種,亦可以使用兩種以上。 當使用兩種以上的聚合物A2時,混合使用兩種包含來自於具有芳香族烴基之單體之構成單元之聚合物A2或者混合使用包含來自於具有芳香族烴基之單體之構成單元之聚合物A2和不包含來自於具有芳香族烴基之單體之構成單元之聚合物A2為較佳。在後者的情況下,包含來自於具有芳香族烴基之單體之構成單元之聚合物A2的含量相對於聚合物A2的所有構成單元為50質量%以上為較佳,70質量%以上為更佳,80質量%以上為進一步較佳,90質量%以上為特佳。上限相對於聚合物A2的所有構成單元為100質量%以下為較佳。 One type of polymer A2 may be used alone, or two or more types may be used. When two or more polymers A2 are used, two polymers A2 containing constituent units derived from monomers having an aromatic hydrocarbon group are used in combination, or polymers containing constituent units derived from monomers having an aromatic hydrocarbon group are used in combination. The substance A2 and the polymer A2 which does not contain the structural unit derived from the monomer which has an aromatic hydrocarbon group are preferable. In the latter case, the content of the polymer A2 containing structural units derived from monomers having an aromatic hydrocarbon group is preferably 50% by mass or more, more preferably 70% by mass or more, based on all the structural units of the polymer A2. , 80% by mass or more is further preferred, and 90% by mass or more is particularly preferred. The upper limit is preferably 100% by mass or less with respect to all the constituent units of the polymer A2.

聚合物A2的含量相對於感光性組成物的總固體成分為10.0~90.0質量%為較佳,20.0~80.0質量%為更佳,30.0~70.0質量%為進一步較佳,40.0~60.0質量%為特佳。當聚合物A2的含量相對於感光性組成物的總固體成分為90.0質量%以下時,能夠控制顯影時間。又,當聚合物A2的含量相對於感光性組成物的總固體成分為10.0質量%以上時,能夠提高耐邊緣熔融性。The content of the polymer A2 is preferably 10.0 to 90.0% by mass, more preferably 20.0 to 80.0% by mass, still more preferably 30.0 to 70.0% by mass, and still more preferably 40.0 to 60.0% by mass, based on the total solid content of the photosensitive composition. Excellent. When content of polymer A2 is 90.0 mass % or less with respect to the total solid content of a photosensitive composition, developing time can be controlled. Moreover, when content of polymer A2 is 10.0 mass % or more with respect to the total solid content of a photosensitive composition, edge melting resistance can be improved.

作為聚合物A2的合成方法,例如可以舉出向將上述單體用溶劑稀釋而成之溶液中添加適量自由基聚合起始劑並進行加熱攪拌之方法。亦可以一邊將混合物的一部分滴加到反應液中一邊進行合成。又,反應結束後,可以進一步加入溶劑而調整為所期望的濃度。 作為聚合物A2的合成方法,除了上述以外,例如可以舉出塊狀聚合、懸浮聚合及乳化聚合。 As a synthesis method of polymer A2, the method of adding an appropriate amount of radical polymerization initiator to the solution which diluted the said monomer with a solvent, and heating and stirring is mentioned, for example. It is also possible to synthesize while adding a part of the mixture dropwise to the reaction liquid. Moreover, after completion|finish of reaction, you may further add a solvent and adjust to desired density|concentration. As a synthesis method of the polymer A2, in addition to the above, block polymerization, suspension polymerization, and emulsion polymerization are mentioned, for example.

<化合物E> 化合物E為具有酸分解性基X之化合物。 關於酸分解性基X,如已敘述。 化合物E可以為低分子化合物,亦可以為高分子化合物(聚合物)。當化合物E為低分子化合物時,作為分子量,3000以下為較佳,500~3000為更佳,1000~2500為進一步較佳。 <Compound E> Compound E is a compound having an acid decomposable group X. The acid-decomposable group X is as already described. Compound E may be a low-molecular compound or a high-molecular compound (polymer). When the compound E is a low molecular weight compound, the molecular weight is preferably 3000 or less, more preferably 500-3000, and still more preferably 1000-2500.

(作為低分子化合物之化合物E) 關於作為低分子化合物之化合物E中的酸分解性基X的個數,並不受特別限制,例如2個以上為較佳。作為上限值,例如為20個以下。 (Compound E as a low-molecular compound) The number of acid-decomposable groups X in compound E which is a low-molecular compound is not particularly limited, for example, two or more are preferable. As an upper limit, it is 20 or less, for example.

關於作為低分子化合物之化合物E的較佳的一態樣,可以舉出多酚化合物的羥基的一部分或全部被選自包括縮醛基、三級丁氧基羰基及三級烷氧基羰基甲基之群組中之基取代之化合物以及聚羧酸的羧基的一部分或全部被三級酯化之三級酯化合物。 又,關於作為低分子化合物之化合物E的較佳的一態樣,例如還可以舉出下述式(E1)所表示之化合物。 式(E1):M-(Ya)q 式中,M表示q價的連結基。Ya表示酸分解性基X。q表示2~20的整數。 Regarding a preferred aspect of Compound E as a low-molecular compound, it can be mentioned that a part or all of the hydroxyl groups of polyphenol compounds are selected from the group consisting of acetal, tertiary butoxycarbonyl and tertiary alkoxycarbonylmethyl A compound substituted with a group in the group group, and a tertiary ester compound in which a part or all of the carboxyl groups of the polycarboxylic acid is tertiary esterified. Moreover, the compound represented by following formula (E1) is also mentioned about a preferable aspect of the compound E which is a low molecular weight compound, for example. Formula (E1): M-(Ya)q In the formula, M represents a q-valent linking group. Ya represents an acid decomposable group X. q represents the integer of 2-20.

式(E1)中,作為M,表示2~10的整數為較佳,表示2~6的整數為更佳。In formula (E1), as M, it is preferable to represent the integer of 2-10, and it is more preferable to represent the integer of 2-6.

作為M的具體例,可以舉出C(R Tm1(-L T-*) m2所表示之m2價的連結基及Ph(R Tn1(-L T-*) n2所表示之n2價的連結基等。 其中,m1+m2表示4,m1表示0~2的整數,m2表示2~4的整數。又,n1+n2表示6,m1表示0~4的整數,n2表示2~6的整數。 R T表示氫原子或取代基。作為R T所表示之取代基,並不受特別限制,表示羥基、烷基、烷氧基、醯基、醯氧基、芳基、芳氧基、芳烷基、芳烷氧基、鹵素原子、硝基、羧基、氰基及經取代或未經取代之胺基等。 L T表示單鍵或2價的連結基。 作為L T所表示之2價的連結基,例如可以舉出伸烷基(較佳為碳數1~20。可以為直鏈狀亦可以為支鏈狀。)、伸環烷基(較佳為碳數6~20)、伸芳基(較佳為環員數6~10的芳香環基)及將該等中的複數個組合而成之2價的連結基。伸烷基中的亞甲基及構成伸環烷基中的環之亞甲基可以被-O-、-NR A-及-S-等雜原子以及>C(=O)及-SO 2-等具有雜原子之基取代。又,伸烷基、伸環烷基及伸芳基可以進一步具有取代基。作為取代基,例如可以舉出鹵素原子(較佳為氟原子)及羥基等。作為R A,可以舉出氫原子或碳數1~6的烷基。 作為L T所表示之2價的連結基的原子數,例如1~100個為較佳,1~50個為更佳,1~30個為進一步較佳。 Specific examples of M include m2-valent linking groups represented by C(R T ) m1 (-L T -*) m2 and n2 represented by Ph(R T ) n1 (-L T -*) n2 Valence linking base, etc. However, m1+m2 represents 4, m1 represents an integer of 0-2, and m2 represents an integer of 2-4. Moreover, n1+n2 represents 6, m1 represents the integer of 0-4, and n2 represents the integer of 2-6. R T represents a hydrogen atom or a substituent. The substituent represented by R T is not particularly limited, and represents hydroxyl, alkyl, alkoxy, acyl, acyloxy, aryl, aryloxy, aralkyl, aralkyloxy, halogen atom , nitro, carboxyl, cyano and substituted or unsubstituted amino, etc. L T represents a single bond or a divalent linking group. As the divalent linking group represented by L T , for example, an alkylene group (preferably having 1 to 20 carbon atoms. It may be linear or branched.), a cycloalkylene group (preferably It is a carbon number of 6 to 20), an aryl group (preferably an aromatic ring group with a ring member of 6 to 10), and a divalent linking group formed by combining a plurality of these. The methylene group in the alkylene group and the methylene group forming the ring in the cycloalkylene group can be replaced by heteroatoms such as -O-, -NR A - and -S-, and >C (=O) and -SO 2 - etc. are substituted with heteroatom groups. Moreover, an alkylene group, a cycloalkylene group, and an arylylene group may have a substituent further. As a substituent, a halogen atom (preferably a fluorine atom), a hydroxyl group, etc. are mentioned, for example. Examples of R A include a hydrogen atom or an alkyl group having 1 to 6 carbon atoms. The number of atoms of the divalent linking group represented by L T is, for example, preferably 1 to 100, more preferably 1 to 50, and still more preferably 1 to 30.

Ph表示苯環。苯環的環員原子具有n1個R T和n2個-L T-*。 Ph represents a benzene ring. The ring member atoms of the benzene ring have n1 R Ts and n2 -L T -*.

*表示與Ya所表示之酸分解性基X的鍵結鍵。* represents a bond with the acid-decomposable group X represented by Ya.

作為式(E1)所表示之化合物,例如可以舉出下述式(EX)所表示之化合物。Examples of the compound represented by the formula (E1) include compounds represented by the following formula (EX).

[化學式17]

Figure 02_image033
[chemical formula 17]
Figure 02_image033

存在複數個之Ya各自獨立地表示酸分解性基X。R T1~R T4各自獨立地表示取代基。當存在複數個R T1時,存在複數個之R T1各自可以相同亦可以不同。當存在複數個R T2時,存在複數個之R T2各自可以相同亦可以不同。當存在複數個R T3時,存在複數個之R T3各自可以相同亦可以不同。當存在複數個R T4時,存在複數個之R T4各自可以相同亦可以不同。 j1、k1及l1各自獨立地表示0~5的整數。又,m1表示0~3的整數。其中,j1、k1、l1及m1的合計數為2以上。 j1、k1及l1為0~2的整數為較佳,1為更佳。又,m1為0~2的整數為較佳,0為更佳。 j2、k2及l2各自獨立地表示0~5的整數。又,m2表示0~3的整數。 L T1~L T3各自獨立地表示伸烷基。伸烷基為直鏈狀或支鏈狀為較佳。伸烷基的碳數為1~12為較佳,1~6為更佳。 The presence of a plurality of Ya each independently represents an acid-decomposable group X. R T1 to R T4 each independently represent a substituent. When a plurality of R T1 exists, each of the plurality of R T1 may be the same or different. When there are plural R T2s , the plural R T2s may be the same or different. When a plurality of R T3 exists, each of the plurality of R T3 may be the same or different. When a plurality of R T4 exists, each of the plurality of R T4 may be the same or different. j1, k1, and l1 each independently represent the integer of 0-5. Moreover, m1 represents the integer of 0-3. However, the total number of j1, k1, l1, and m1 is 2 or more. It is preferable that j1, k1, and l1 are integers of 0-2, and 1 is more preferable. Moreover, it is preferable that m1 is an integer of 0-2, and 0 is more preferable. j2, k2, and l2 each independently represent the integer of 0-5. Moreover, m2 represents the integer of 0-3. L T1 to L T3 each independently represent an alkylene group. The alkylene group is preferably linear or branched. The number of carbon atoms in the alkylene group is preferably 1-12, more preferably 1-6.

關於作為低分子化合物之化合物E,例如亦能夠使用日本特開平8-123031號公報的[0028]~[0063]段落中所記載之化合物。As the compound E which is a low molecular weight compound, for example, compounds described in paragraphs [0028] to [0063] of JP-A-8-123031 can also be used.

(作為高分子化合物之化合物E) 當化合物E為高分子化合物時,化合物E為與已敘述的聚合物A1不同的聚合物為較佳,含有包含酸分解性基X之構成單元(對應於已敘述的聚合物A1所具有之構成單元A1a。)且不含有包含羧基之構成單元(對應於已敘述的聚合物A1所具有之構成單元A1b。)之聚合物為較佳。 (Compound E as a polymer compound) When the compound E is a polymer compound, it is preferable that the compound E is a polymer different from the polymer A1 already described, and contains a structural unit comprising an acid-decomposable group X (corresponding to the structure of the polymer A1 already described. Unit A1a.) and a polymer that does not contain a structural unit containing a carboxyl group (corresponding to the structural unit A1b of the polymer A1 already described) is preferred.

關於作為高分子化合物之化合物E的具體態樣,可以舉出除了不含有包含羧基之構成單元之點以外,與已敘述的聚合物A1相同的構成的聚合物。又,關於該聚合物中的各構成單元的含量,亦與聚合物A1中的各構成單元的含量相同。Specific examples of the compound E as a high molecular compound include polymers having the same configuration as the polymer A1 described above except for not including a structural unit including a carboxyl group. Moreover, also about content of each structural unit in this polymer, it is the same as content of each structural unit in polymer A1.

關於作為高分子化合物之化合物E的較佳態樣的一例,可以舉出包含構成單元A1a、來自於苯乙烯之構成單元或來自於甲基丙烯酸苄酯之構成單元及來自於甲基丙烯酸甲酯之構成單元之聚合物。 又,關於作為高分子化合物之化合物E的較佳態樣的另一例,可以舉出包含構成單元A1a、來自於苯乙烯之構成單元或來自於甲基丙烯酸苄酯之構成單元及來自於包含在側鏈中具有分支結構之基之單體或包含在側鏈中具有脂環結構之基之單體之構成單元之聚合物。 又,關於作為高分子化合物之化合物E的較佳態樣的另一例,可以舉出包含構成單元A1a、來自於苯乙烯之構成單元或來自於甲基丙烯酸苄酯之構成單元及具有聚合性基之構成單元之聚合物。 又,關於作為高分子化合物之化合物E的較佳態樣的另一例,可以舉出僅由構成單元A1a構成之聚合物。 As an example of a preferable aspect of Compound E as a high molecular compound, there can be mentioned a constituent unit derived from structural unit A1a, a constituent unit derived from styrene, a constituent unit derived from benzyl methacrylate, and a constituent unit derived from methyl methacrylate. A polymer of constituent units. In addition, as another example of a preferable aspect of Compound E as a polymer compound, a structural unit derived from styrene or benzyl methacrylate comprising a structural unit A1a, and a structural unit derived from a compound contained in A polymer comprising a monomer having a branched structure group in the side chain or a monomer having an alicyclic structure group in the side chain. In addition, as another example of a preferable aspect of Compound E as a polymer compound, it is possible to include structural units including structural units A1a, structural units derived from styrene, or structural units derived from benzyl methacrylate and polymerizable groups. A polymer of constituent units. Moreover, as another example of the preferable aspect of the compound E which is a high molecular compound, the polymer which consists only of structural unit A1a is mentioned.

關於作為高分子化合物之化合物E的重量平均分子量,100000以下為較佳,80000以下為更佳,50000以下為進一步較佳,30000以下為特佳。關於作為高分子化合物之化合物E的重量平均分子量,5000以上為較佳,6000以上為更佳,8000以上為進一步較佳,10000以上為特佳。The weight average molecular weight of Compound E which is a polymer compound is preferably at most 100,000, more preferably at most 80,000, still more preferably at most 50,000, and particularly preferably at most 30,000. The weight average molecular weight of Compound E which is a polymer compound is preferably 5,000 or more, more preferably 6,000 or more, still more preferably 8,000 or more, and particularly preferably 10,000 or more.

化合物E的含量相對於感光性組成物的總固體成分為1.0~50.0質量%為較佳,2.0~40.0質量%為更佳,3.0~30.0質量%為進一步較佳,5.0~20.0質量%為特佳。The content of Compound E is preferably 1.0 to 50.0% by mass, more preferably 2.0 to 40.0% by mass, still more preferably 3.0 to 30.0% by mass, particularly preferably 5.0 to 20.0% by mass, based on the total solid content of the photosensitive composition. good.

[轉印膜] 本發明還係關於轉印膜。 本發明的轉印膜具有偽支撐體及由已敘述的感光性組成物形成之感光性組成物層。 [Transfer film] The invention also relates to transfer films. The transfer film of the present invention has a pseudo-support and a photosensitive composition layer formed of the above-described photosensitive composition.

轉印膜除了後述之感光性組成物層以外,可以具有其他層。 作為其他層,例如可以舉出後述之中間層。又,轉印膜可以具有後述之其他構件(例如,保護膜等)。 The transfer film may have other layers other than the photosensitive composition layer described later. As another layer, the intermediate|middle layer mentioned later is mentioned, for example. Moreover, the transfer film may have other members (for example, a protective film etc.) mentioned later.

作為轉印膜的實施態樣,例如可以舉出以下的構成(1)或(2),構成(2)為較佳。 (1)“偽支撐體/感光性組成物層/保護膜” (2)“偽支撐體/中間層/感光性組成物層/保護膜” 轉印膜具有中間層為較佳。 As an embodiment of the transfer film, for example, the following constitution (1) or (2) can be mentioned, and constitution (2) is preferable. (1) "pseudo-support/photosensitive composition layer/protective film" (2) "pseudo-support/intermediate layer/photosensitive composition layer/protective film" It is preferable that the transfer film has an intermediate layer.

從抑制在後述之貼合步驟中產生氣泡之觀點而言,轉印膜的波紋的最大寬度為300μm以下為較佳,200μm以下為更佳,60μm以下為進一步較佳。下限為0μm以上為較佳,0.1μm以上為更佳,1μm以上為進一步較佳。 轉印膜的波紋的最大寬度為藉由以下的程序測量之值。 將轉印膜沿著與主面垂直的方向裁斷為長20cm×寬20cm的尺寸而製作出試驗樣品。另外,當轉印膜具有保護膜時,從轉印膜剝離保護膜。接著,在表面平滑且水平的工作臺上,將上述試驗樣品以使偽支撐體的表面與工作臺對向之方式靜置。靜置後,對試驗樣品的中心10cm見方的範圍,用雷射顯微鏡(例如,KEYENCE CORPORATION製造之VK-9700SP)掃描試驗樣品的表面而得到三維表面圖像,從在所得到之三維表面圖像中觀察到之最大凸面高度減去最低凹面高度。對10個試驗樣品進行上述操作,將其算術平均值作為轉印膜的波紋最大寬度。 From the viewpoint of suppressing generation of air bubbles in a bonding step described later, the maximum width of the ripples of the transfer film is preferably 300 μm or less, more preferably 200 μm or less, and still more preferably 60 μm or less. The lower limit is preferably at least 0 μm, more preferably at least 0.1 μm, and still more preferably at least 1 μm. The maximum width of the ripples of the transfer film is a value measured by the following procedure. The transfer film was cut into a size of 20 cm in length x 20 cm in width in a direction perpendicular to the main surface to prepare a test sample. In addition, when the transfer film has a protective film, the protective film is peeled from the transfer film. Next, the above-mentioned test sample was left still on a table with a smooth and horizontal surface so that the surface of the dummy support faced the table. After standing still, scan the surface of the test sample with a laser microscope (for example, VK-9700SP manufactured by KEYENCE CORPORATION) to obtain a three-dimensional surface image of the center of the test sample within a 10 cm square area. From the obtained three-dimensional surface image The height of the largest convexity minus the height of the lowest concave. The above-mentioned operation was performed on 10 test samples, and the arithmetic mean thereof was used as the maximum corrugation width of the transfer film.

在轉印膜的感光性組成物層中,當在感光性組成物層的與偽支撐體相反的一側的表面進一步具有其他組成物層(例如,感光性組成物層及中間層等)時,其他組成物層的合計厚度相對於感光性組成物層的厚度為0.1~30%為較佳,0.1~20%為更佳。In the photosensitive composition layer of the transfer film, when there are further composition layers (for example, a photosensitive composition layer and an intermediate layer, etc.) on the surface of the photosensitive composition layer opposite to the dummy support , The total thickness of the other composition layers is preferably 0.1 to 30%, more preferably 0.1 to 20%, of the thickness of the photosensitive composition layer.

從密接性更優異的觀點而言,感光性組成物層的波長365nm的光的透射率為10%以上為較佳,30%以上為更佳,50%以上為進一步較佳。上限為99.9%以下為較佳,99.0%以下為更佳。From the viewpoint of better adhesion, the transmittance of light having a wavelength of 365 nm of the photosensitive composition layer is preferably 10% or more, more preferably 30% or more, and still more preferably 50% or more. The upper limit is preferably 99.9% or less, more preferably 99.0% or less.

對轉印膜的實施形態的例子進行說明。 圖1所示之轉印膜10依序具有偽支撐體11、包含中間層13及感光性組成物層15之組成物層17以及保護膜19。 圖1所示之轉印膜10為具有中間層13及保護膜19之形態,但亦可以不具有中間層13及保護膜19。 在圖1中,將可以配置於偽支撐體11上之除保護膜19以外的各層(例如,感光性組成物層及中間層等)亦稱為“組成物層”。 An example of embodiment of the transfer film will be described. The transfer film 10 shown in FIG. 1 has a dummy support 11 , a composition layer 17 including an intermediate layer 13 and a photosensitive composition layer 15 , and a protective film 19 in this order. Although the transfer film 10 shown in FIG. 1 has the intermediate layer 13 and the protective film 19, it does not need to have the intermediate layer 13 and the protective film 19. In FIG. 1 , each layer (for example, a photosensitive composition layer, an intermediate layer, etc.) that can be disposed on the dummy support 11 other than the protective film 19 is also referred to as a “composition layer”.

以下,關於轉印膜,對各構件及各成分進行詳細說明。 另外,以下所記載之構成要件的說明有時根據本發明的代表性實施態樣而進行,但本發明並不限定於這種實施態樣。 Hereinafter, with regard to the transfer film, each member and each component will be described in detail. In addition, the description of the constituent requirements described below may be based on representative embodiments of the present invention, but the present invention is not limited to such embodiments.

〔偽支撐體〕 轉印膜具有偽支撐體。 偽支撐體係支撐感光性組成物層之構件,最終藉由剝離處理而被去除。 〔Pseudo-support body〕 The transfer film has a pseudo-support. The member of the pseudo support system supporting the photosensitive composition layer is finally removed by peeling treatment.

偽支撐體可以為單層結構及多層結構中的任一種。 作為偽支撐體,薄膜為較佳,樹脂薄膜為更佳。又,作為偽支撐體,具有可撓性且在加壓下或加壓下及加熱下不產生明顯的變形、收縮或伸長之薄膜亦為較佳,沒有褶皺等變形及刮痕之薄膜亦為較佳。 作為薄膜,例如可以舉出聚對酞酸乙二酯薄膜(例如,雙軸拉伸聚對酞酸乙二酯薄膜)、聚甲基丙烯酸甲酯薄膜、三乙酸纖維素薄膜、聚苯乙烯薄膜、聚醯亞胺薄膜及聚碳酸酯薄膜,聚對酞酸乙二酯薄膜為較佳。 The pseudo-support may be any of a single-layer structure and a multi-layer structure. As the pseudo-support, a thin film is preferable, and a resin thin film is more preferable. Also, as a pseudo-support, a film that is flexible and does not undergo significant deformation, shrinkage or elongation under pressure or under pressure and heat is also preferred, and a film without deformation such as wrinkles and scratches is also preferred. better. Examples of films include polyethylene terephthalate films (for example, biaxially stretched polyethylene terephthalate films), polymethyl methacrylate films, cellulose triacetate films, polystyrene films , polyimide film and polycarbonate film, polyethylene terephthalate film is preferred.

從能夠經由偽支撐體進行圖案曝光之觀點而言,偽支撐體的透明性高為較佳。具體而言,波長365nm下的偽支撐體的透射率為60%以上為較佳,70%以上為更佳。上限未達100%為較佳。 從經由偽支撐體之圖案曝光時的圖案形成性及偽支撐體的透明性的觀點而言,偽支撐體的霧度小為較佳。具體而言,偽支撐體的霧度為2%以下為較佳,0.5%以下為更佳,0.1%以下為進一步較佳。下限為0%以上為較佳。 From the viewpoint of enabling pattern exposure through the dummy support, it is preferable that the dummy support has high transparency. Specifically, the transmittance of the pseudo-support at a wavelength of 365 nm is preferably 60% or more, more preferably 70% or more. It is better if the upper limit is less than 100%. It is preferable that the haze of the dummy support is small from the viewpoint of the pattern formability at the time of pattern exposure through the dummy support and the transparency of the dummy support. Specifically, the haze of the pseudo-support is preferably 2% or less, more preferably 0.5% or less, and still more preferably 0.1% or less. The lower limit is preferably 0% or more.

從經由偽支撐體之圖案曝光時的圖案形成性及偽支撐體的透明性的觀點而言,偽支撐體中的微粒、異物及缺陷的數量少為較佳。具體而言,偽支撐體中的微粒(例如,直徑1μm的微粒)、異物及缺陷的數量為50個/10mm 2以下為較佳,10個/10mm 2以下為更佳,3個/10mm 2以下為進一步較佳,未達1個/10mm 2為特佳。下限為0個/10mm 2以上為較佳。 It is preferable that the number of fine particles, foreign matter, and defects in the dummy support is small from the viewpoint of pattern formation properties during pattern exposure through the dummy support and transparency of the dummy support. Specifically, the number of particles (for example, particles with a diameter of 1 μm), foreign matter and defects in the pseudo-support is preferably 50 pieces/10mm 2 or less, more preferably 10 pieces/10mm 2 or less, and 3 pieces/10mm 2 The following are more preferable, and less than 1 piece/10mm 2 is particularly preferable. The lower limit is preferably 0 piece/10mm 2 or more.

偽支撐體的厚度為5μm以上為較佳,10μm以上為更佳。上限為200μm以下為較佳,從操作容易性及通用性的觀點而言,150μm以下為更佳,50μm以下為進一步較佳,25μm以下為特佳,未達16μm為最佳。 偽支撐體的厚度作為藉由基於SEM(掃描型電子顯微鏡:Scanning Electron Microscope)之剖面觀察測量之任意5點的平均值而算出。 The thickness of the dummy support is preferably 5 μm or more, more preferably 10 μm or more. The upper limit is preferably 200 μm or less, more preferably 150 μm or less, more preferably 50 μm or less, particularly preferably 25 μm or less, and most preferably less than 16 μm from the viewpoint of ease of handling and versatility. The thickness of the pseudo-support was calculated as an average value of arbitrary five points measured by cross-sectional observation with SEM (Scanning Electron Microscope).

從處理性的觀點而言,偽支撐體可以在偽支撐體的單面或兩面具有包含微粒之層(潤滑劑層)。 潤滑劑層中所包含之微粒的直徑為0.05~0.8μm為較佳。 潤滑劑層的厚度為0.05~1.0μm為較佳。 From the viewpoint of handleability, the pseudo-support may have a layer (lubricant layer) containing fine particles on one or both surfaces of the pseudo-support. The fine particles contained in the lubricant layer preferably have a diameter of 0.05 to 0.8 μm. The thickness of the lubricant layer is preferably 0.05 to 1.0 μm.

從提高偽支撐體與感光性組成物層的密接性之觀點而言,偽支撐體的與感光性組成物層接觸之面可以進行表面改質處理。 作為表面改質處理,例如可以舉出使用UV照射、電暈放電及電漿等之處理。 UV照射中的曝光量為10~2000mJ/cm 2為較佳,50~1000mJ/cm 2為更佳。 若曝光量在上述範圍內,則燈輸出及照度不受特別限制。 作為UV照射中的光源,例如可以舉出發出150~450nm波長帶的光之低壓水銀燈、高壓水銀燈、超高壓水銀燈、碳弧燈、金屬鹵化物燈、氙燈、化學燈、無電極放電燈及發光二極體(LED)。 From the viewpoint of improving the adhesiveness between the dummy support and the photosensitive composition layer, the surface of the dummy support that is in contact with the photosensitive composition layer may be subjected to a surface modification treatment. Examples of the surface modification treatment include treatment using UV irradiation, corona discharge, and plasma. The exposure amount in UV irradiation is preferably 10 to 2000 mJ/cm 2 , more preferably 50 to 1000 mJ/cm 2 . As long as the exposure amount is within the above-mentioned range, the lamp output and the illuminance are not particularly limited. Examples of light sources for UV irradiation include low-pressure mercury lamps, high-pressure mercury lamps, ultra-high-pressure mercury lamps, carbon arc lamps, metal halide lamps, xenon lamps, chemical lamps, electrodeless discharge lamps, and luminescent lamps that emit light in the 150-450 nm wavelength band. Diodes (LEDs).

作為偽支撐體,例如可以舉出厚度16μm的雙軸拉伸聚對酞酸乙二酯薄膜、厚度12μm的雙軸拉伸聚對酞酸乙二酯薄膜及厚度9μm的雙軸拉伸聚對酞酸乙二酯薄膜。 又,作為偽支撐體,例如還可以舉出日本特開2014-085643號公報的[0017]~[0018]段落、日本特開2016-027363號公報的[0019]~[0026]段落、國際公開第2012/081680號的[0041]~[0057]段落及國際公開第2018/179370號的[0029]~[0040]段落,該等內容被編入本說明書中。 作為偽支撐體的市售品,例如可以舉出註冊商標LUMIRROR 16KS40及註冊商標LUMIRROR 16FB40(以上為TORAY INDUSTRIES, INC.製造);Cosmoshine A4100、Cosmoshine A4300及Cosmoshine A8300(以上為Toyobo Co.,Ltd.製造)。 Examples of pseudo-supports include biaxially stretched polyethylene terephthalate film with a thickness of 16 μm, biaxially stretched polyethylene terephthalate film with a thickness of 12 μm, and biaxially stretched polyethylene terephthalate film with a thickness of 9 μm. Ethylene phthalate film. In addition, as the pseudo-support, for example, paragraphs [0017] to [0018] of JP-A 2014-085643, paragraphs [0019]-[0026] of JP-A 2016-027363, international publications Paragraphs [0041] to [0057] of No. 2012/081680 and paragraphs [0029] to [0040] of International Publication No. 2018/179370 are incorporated into this specification. Examples of commercially available pseudo-supports include registered trademark LUMIRROR 16KS40 and registered trademark LUMIRROR 16FB40 (the above are manufactured by TORAY INDUSTRIES, INC.); Cosmoshine A4100, Cosmoshine A4300, and Cosmoshine A8300 (the above are Toyobo Co., Ltd. manufacture).

〔感光性組成物層〕 轉印膜具有感光性組成物層。 感光性組成物層為由已敘述的感光性組成物形成之層。 〔Photosensitive composition layer〕 The transfer film has a photosensitive composition layer. The photosensitive composition layer is a layer formed of the above-mentioned photosensitive composition.

感光性組成物層的厚度(膜厚)為0.1~300μm的情況多,0.2~100μm為較佳,0.5~50μm為更佳,0.5~30μm為進一步較佳,1~20μm為特佳。藉此,感光性組成物層的顯影性提高,從而能夠提高解析性。The thickness (film thickness) of the photosensitive composition layer is often 0.1 to 300 μm, preferably 0.2 to 100 μm, more preferably 0.5 to 50 μm, still more preferably 0.5 to 30 μm, and particularly preferably 1 to 20 μm. Thereby, the developability of a photosensitive composition layer improves and resolution can be improved.

<殘餘有機溶劑> 感光性組成物層可以包含殘餘有機溶劑。 作為殘餘有機溶劑,例如可以舉出苯、甲醛、三氯乙烯、1,3-丁二烯、四氯化碳、氯仿、N,N-二甲基甲醯胺、N,N-二甲基乙醯胺及己烷。 殘餘有機溶劑的含量相對於感光性組成物層的總質量為100質量ppm以下為較佳,20質量ppm以下為更佳,4質量ppm以下為進一步較佳。下限相對於感光性組成物層的總質量為10質量ppb以上為較佳,100質量ppb以上為更佳。 作為調整殘餘有機溶劑的含量之方法,可以舉出調整後述之轉印膜的製造方法中的乾燥處理條件之方法。又,殘餘有機溶劑的含量例如能夠藉由氣相層析分析等公知的方法來定量。 <Residual organic solvents> The photosensitive composition layer may contain residual organic solvents. Examples of residual organic solvents include benzene, formaldehyde, trichloroethylene, 1,3-butadiene, carbon tetrachloride, chloroform, N,N-dimethylformamide, N,N-dimethyl Acetamide and hexane. The content of the residual organic solvent is preferably at most 100 mass ppm with respect to the total mass of the photosensitive composition layer, more preferably at most 20 mass ppm, still more preferably at most 4 mass ppm. The lower limit is preferably at least 10 mass ppb with respect to the total mass of the photosensitive composition layer, more preferably at least 100 mass ppb. As a method of adjusting content of a residual organic solvent, the method of adjusting the drying process conditions in the manufacturing method of the transfer film mentioned later is mentioned. Moreover, content of a residual organic solvent can be quantified by a well-known method, such as a gas chromatography analysis, for example.

〔中間層〕 轉印膜可以在偽支撐體與感光性組成物層之間具有中間層。 作為中間層,例如可以舉出水溶性樹脂層及在日本特開平5-072724號公報中作為“分離層”而記載之具有阻氧功能之阻氧層。 作為中間層,從曝光時的靈敏度提高而曝光機的時間負荷降低從而生產性提高之觀點而言,阻氧層為較佳,顯示出低氧透過性且分散或溶解於水或鹼水溶液(22℃的碳酸鈉的1質量%水溶液)之阻氧層為更佳。 以下,對中間層可以包含之各成分進行說明。 〔middle layer〕 The transfer film may have an intermediate layer between the dummy support and the photosensitive composition layer. Examples of the intermediate layer include a water-soluble resin layer and an oxygen barrier layer having an oxygen barrier function described as a "separation layer" in JP-A-5-072724. As an intermediate layer, an oxygen barrier layer is preferable from the standpoint of improving the sensitivity during exposure and reducing the time load of the exposure machine, thereby improving productivity. It exhibits low oxygen permeability and is dispersed or dissolved in water or an aqueous alkali solution (22 1 mass % aqueous solution of sodium carbonate at ℃) the oxygen barrier layer is more preferable. Hereinafter, each component which may be contained in an intermediate|middle layer is demonstrated.

<水溶性樹脂> 中間層可以包含水溶性樹脂。 作為水溶性樹脂,例如可以舉出聚乙烯醇系樹脂、聚乙烯吡咯啶酮系樹脂、纖維素系樹脂、聚醚系樹脂、明膠及聚醯胺樹脂。 水溶性樹脂包含選自包括聚乙烯醇系樹脂、聚乙烯吡咯啶酮系樹脂、纖維素系樹脂、丙烯醯胺系樹脂、聚環氧乙烷系樹脂、明膠、乙烯醚系樹脂及聚醯胺樹脂之群組中之至少一種為較佳。 <Water-soluble resin> The intermediate layer may contain a water-soluble resin. Examples of water-soluble resins include polyvinyl alcohol-based resins, polyvinylpyrrolidone-based resins, cellulose-based resins, polyether-based resins, gelatin, and polyamide resins. The water-soluble resin comprises polyvinyl alcohol-based resins, polyvinylpyrrolidone-based resins, cellulose-based resins, acrylamide-based resins, polyethylene oxide-based resins, gelatin, vinyl ether-based resins, and polyamide At least one of the group of resins is preferred.

作為纖維素系樹脂,例如可以舉出水溶性纖維素衍生物。 作為水溶性纖維素衍生物,例如可以舉出羥乙基纖維素、羥丙基甲基纖維素、羥丙基纖維素、羧甲基纖維素、甲基纖維素及乙基纖維素。 Examples of cellulose-based resins include water-soluble cellulose derivatives. Examples of water-soluble cellulose derivatives include hydroxyethylcellulose, hydroxypropylmethylcellulose, hydroxypropylcellulose, carboxymethylcellulose, methylcellulose, and ethylcellulose.

作為聚醚系樹脂,例如可以舉出聚乙二醇、聚丙二醇及該等的環氧烷加成物以及乙烯醚系樹脂。 作為聚醯胺樹脂,例如可以舉出丙烯醯胺系樹脂、乙烯基醯胺系樹脂及烯丙基醯胺系樹脂。 Examples of polyether-based resins include polyethylene glycol, polypropylene glycol, and their alkylene oxide adducts, and vinyl ether-based resins. Examples of polyamide resins include acrylamide resins, vinylamide resins, and allylamide resins.

作為水溶性樹脂,例如還可以舉出(甲基)丙烯酸/乙烯基化合物的共聚物,(甲基)丙烯酸與(甲基)丙烯酸烯丙酯的共聚物為較佳,甲基丙烯酸與甲基丙烯酸烯丙酯的共聚物為更佳。 當水溶性樹脂為(甲基)丙烯酸與乙烯基化合物的共聚物時,作為各組成比((甲基)丙烯酸的mol%/乙烯基化合物的mol%),90/10~20/80為較佳,80/20~30/70為更佳。 Examples of water-soluble resins include (meth)acrylic acid/vinyl compound copolymers, preferably (meth)acrylic acid and allyl (meth)acrylate copolymers, and methacrylic acid and methacrylic acid copolymers. Copolymers of allyl acrylate are more preferred. When the water-soluble resin is a copolymer of (meth)acrylic acid and vinyl compound, as each composition ratio (mol% of (meth)acrylic acid/mol% of vinyl compound), 90/10 to 20/80 is relatively Good, 80/20~30/70 is better.

水溶性樹脂的重量平均分子量為5,000以上為較佳,7,000以上為更佳,10,000以上為進一步較佳。上限為200,000以下為較佳,100,000以下為更佳,50,000以下為進一步較佳。 水溶性樹脂的分散度為1~10為較佳,1~5為更佳,1~3為進一步較佳。 The weight average molecular weight of the water-soluble resin is preferably at least 5,000, more preferably at least 7,000, and still more preferably at least 10,000. The upper limit is preferably at most 200,000, more preferably at most 100,000, and further preferably at most 50,000. The degree of dispersion of the water-soluble resin is preferably 1-10, more preferably 1-5, and still more preferably 1-3.

水溶性樹脂可以單獨使用一種或者使用兩種以上。 在進一步提高阻氧性及層間混合抑制能力之觀點上,水溶性樹脂的含量相對於中間層的總質量為50.0質量%以上為較佳,70.0質量%以上為更佳,80.0質量%以上為進一步較佳,90.0質量%以上為特佳。上限相對於中間層的總質量為100質量%以下為較佳,99.9質量%以下為更佳,99.8質量%以下為進一步較佳,99.0質量%以下為特佳。 The water-soluble resins may be used alone or in combination of two or more. From the viewpoint of further improving the oxygen barrier properties and interlayer mixing suppression ability, the content of the water-soluble resin is preferably 50.0% by mass or more, more preferably 70.0% by mass or more, and furthermore 80.0% by mass or more with respect to the total mass of the intermediate layer. Preferably, 90.0% by mass or more is particularly preferred. The upper limit is preferably 100% by mass or less, more preferably 99.9% by mass or less, still more preferably 99.8% by mass or less, and particularly preferably 99.0% by mass or less with respect to the total mass of the intermediate layer.

<其他成分> 中間層除了上述水溶性樹脂以外,可以包含其他成分。 <Other ingredients> The intermediate layer may contain other components in addition to the above-mentioned water-soluble resin.

作為其他成分,多元醇類、多元醇類的環氧烷加成物、酚衍生物或醯胺化合物為較佳,多元醇類、酚衍生物或醯胺化合物為更佳。 又,作為其他成分,例如還可以舉出公知的界面活性劑。 As other components, polyols, alkylene oxide adducts of polyols, phenol derivatives, or amide compounds are preferable, and polyols, phenol derivatives, or amide compounds are more preferable. Moreover, as another component, a well-known surfactant is also mentioned, for example.

作為多元醇類,例如可以舉出甘油、二甘油及二乙二醇。 作為多元醇類所具有之羥基的數量,2~10為較佳。 作為多元醇類的環氧烷加成物,例如可以舉出在上述多元醇類上加成有伸乙氧基及伸丙氧基等之化合物。 伸烷氧基的平均加成數為1~100為較佳,2~50為更佳,2~20為進一步較佳。 作為酚衍生物,例如可以舉出雙酚A及雙酚S。 作為醯胺化合物,例如可以舉出N-甲基吡咯啶酮。 Examples of polyhydric alcohols include glycerin, diglycerin, and diethylene glycol. As the number of the hydroxyl groups which polyols have, 2-10 are preferable. Examples of the alkylene oxide adducts of polyols include compounds in which ethoxyl groups, propoxyl groups, and the like are added to the above polyols. The average addition number of alkyleneoxy groups is preferably from 1 to 100, more preferably from 2 to 50, and still more preferably from 2 to 20. As a phenol derivative, bisphenol A and bisphenol S are mentioned, for example. As an amide compound, N-methylpyrrolidone is mentioned, for example.

中間層包含選自包括水溶性纖維素衍生物、多元醇類、多元醇類的氧化物加成物、聚醚系樹脂、酚衍生物及醯胺化合物之群組中之至少一種為較佳。The intermediate layer preferably contains at least one selected from the group consisting of water-soluble cellulose derivatives, polyols, oxide adducts of polyols, polyether resins, phenol derivatives, and amide compounds.

其他成分的分子量未達5,000為較佳,4,000以下為更佳,3,000以下為進一步較佳,2,000以下為特佳,1,500以下為最佳。下限為60以上為較佳。The molecular weight of other components is preferably not more than 5,000, more preferably not more than 4,000, still more preferably not more than 3,000, particularly preferably not more than 2,000, and most preferably not more than 1,500. The lower limit is preferably 60 or more.

其他成分可以單獨使用一種,亦可以使用兩種以上。 其他成分的含量相對於中間層的總質量為0.1質量%以上為較佳,0.5質量%以上為更佳,1.0質量%以上為進一步較佳。上限未達30.0質量%為較佳,10.0質量%以下為更佳,5.0質量%以下為進一步較佳。 The other components may be used alone or in combination of two or more. The content of other components is preferably at least 0.1% by mass, more preferably at least 0.5% by mass, and still more preferably at least 1.0% by mass, based on the total mass of the intermediate layer. The upper limit is preferably less than 30.0 mass %, more preferably 10.0 mass % or less, and still more preferably 5.0 mass % or less.

<雜質> 中間層可以包含雜質。 作為雜質,例如可以舉出上述感光性組成物層中所包含之雜質。 <Impurities> The intermediate layer may contain impurities. As an impurity, the impurity contained in the said photosensitive composition layer is mentioned, for example.

中間層的厚度為0.1~5μm為較佳,0.5~3μm為更佳。當中間層的厚度在上述範圍內時,不會降低阻氧性,且層間混合抑制能力優異。又,能夠進一步縮短顯影時的中間層去除時間。The thickness of the intermediate layer is preferably 0.1 to 5 μm, more preferably 0.5 to 3 μm. When the thickness of the intermediate layer is within the above range, the oxygen barrier property is not lowered, and the interlayer mixing suppression ability is excellent. In addition, the intermediate layer removal time during development can be further shortened.

〔其他構件〕 轉印膜除了上述構件以外,可以具有其他構件。 作為其他構件,例如可以舉出保護膜。 [other components] The transfer film may have other members in addition to the above-mentioned members. As another member, a protective film is mentioned, for example.

作為保護膜,例如可以舉出具有耐熱性及耐溶劑性之樹脂薄膜。具體而言,可以舉出聚丙烯薄膜及聚乙烯薄膜等聚烯烴薄膜、聚對酞酸乙二酯薄膜等聚酯薄膜、聚碳酸酯薄膜以及聚苯乙烯薄膜。又,作為保護膜,可以使用由與上述偽支撐體相同的材料構成之樹脂薄膜。 其中,作為保護膜,聚烯烴薄膜為較佳,聚丙烯薄膜或聚乙烯薄膜為更佳。 As a protective film, the resin film which has heat resistance and solvent resistance is mentioned, for example. Specifically, polyolefin films, such as a polypropylene film and a polyethylene film, polyester films, such as a polyethylene terephthalate film, a polycarbonate film, and a polystyrene film are mentioned. In addition, as the protective film, a resin film made of the same material as the dummy support described above can be used. Among them, as the protective film, a polyolefin film is preferable, and a polypropylene film or a polyethylene film is more preferable.

作為保護膜的厚度,1~100μm為較佳,5~50μm為更佳,5~40μm為進一步較佳,15~30μm為特佳。 從機械強度優異的觀點而言,保護膜的厚度為1μm以上為較佳,從比較廉價的觀點而言,100μm以下為較佳。 The thickness of the protective film is preferably from 1 to 100 μm, more preferably from 5 to 50 μm, still more preferably from 5 to 40 μm, and particularly preferably from 15 to 30 μm. From the viewpoint of excellent mechanical strength, the thickness of the protective film is preferably 1 μm or more, and from the viewpoint of relatively low cost, it is preferably 100 μm or less.

保護膜中所包含之直徑80μm以上的魚眼(fisheye)數為5個/m 2以下為較佳。下限為0個/m 2以上為較佳。 “魚眼”係指使材料熱熔融,並進行混煉、擠出,並且藉由雙軸拉伸及流延法等方法製造薄膜時,材料的異物、未溶解物及氧化劣化物等被取入薄膜中者。 The number of fisheyes with a diameter of 80 μm or more included in the protective film is preferably 5 or less/m 2 . The lower limit is preferably 0 piece/m 2 or more. "Fish eye" means that when the material is thermally melted, kneaded, extruded, and produced by biaxial stretching and casting methods, foreign matter, undissolved matter, and oxidative deterioration of the material are taken in. Those in the film.

保護膜中所包含之直徑3μm以上的粒子的數量為30個/mm 2以下為較佳,10個/mm 2以下為更佳,5個/mm 2以下為進一步較佳。下限為0個/mm 2以上為較佳。當在上述範圍內時,能夠抑制由保護膜中所包含之粒子引起之凹凸轉印到感光性組成物層或導電層而產生之缺陷。 The number of particles with a diameter of 3 μm or more contained in the protective film is preferably 30 particles/mm 2 or less, more preferably 10 particles/mm 2 or less, still more preferably 5 particles/mm 2 or less. The lower limit is preferably 0 piece/mm 2 or more. When it is in the said range, the defect which arises by transcribe|transferring the unevenness|corrugation by the particle|grains contained in a protective film to a photosensitive composition layer or a conductive layer can be suppressed.

從賦予捲取性之觀點而言,保護膜的和與感光性組成物層接觸之面相反的一側的表面或接觸之面的算術平均粗糙度Ra為0.01μm以上為較佳,0.02μm以上為更佳,0.03μm以上為進一步較佳。上限未達0.50μm為較佳,0.40μm以下為更佳,0.30μm以下為進一步較佳。From the viewpoint of imparting windability, the surface of the protective film opposite to the surface in contact with the photosensitive composition layer or the contact surface has an arithmetic average roughness Ra of 0.01 μm or more, preferably 0.02 μm or more More preferably, 0.03 μm or more is still more preferable. The upper limit is preferably less than 0.50 μm, more preferably 0.40 μm or less, and still more preferably 0.30 μm or less.

[轉印膜的製造方法] 作為轉印膜的製造方法,並不受特別限制,可以舉出公知的方法。 作為上述轉印膜10的製造方法,例如可以舉出包括如下步驟之方法:在偽支撐體11的表面塗佈中間層形成用組成物而形成塗膜,進一步對該塗膜進行乾燥而形成中間層13之步驟;及在中間層13的表面塗佈感光性組成物而形成塗膜,進一步對該塗膜進行乾燥而形成感光性組成物層15之步驟。 [Manufacturing method of transfer film] It does not specifically limit as a manufacturing method of a transfer film, A well-known method is mentioned. As a method for producing the above-mentioned transfer film 10, for example, a method including the steps of applying a composition for forming an intermediate layer on the surface of the dummy support 11 to form a coating film, and further drying the coating film to form an intermediate layer The step of layer 13; and the step of coating the photosensitive composition on the surface of the intermediate layer 13 to form a coating film, and further drying the coating film to form the photosensitive composition layer 15.

當轉印膜10具有保護膜19時,可以在藉由上述製造方法製造之轉印膜10的組成物層17上壓接保護膜19。 作為轉印膜10的製造方法,藉由包括以與組成物層17的與偽支撐體11側相反的一側的面接觸之方式設置保護膜19之步驟來製造具備偽支撐體11、中間層13、感光性組成物層15及保護膜19之轉印膜10為較佳。 藉由上述製造方法製造轉印膜10之後,可以藉由捲取轉印膜10而製作及保管卷形態的轉印膜。卷形態的轉印膜10能夠以保持原樣的形態提供給後述之以卷對卷方式與基板貼合之步驟。 When the transfer film 10 has the protective film 19, the protective film 19 can be crimped on the composition layer 17 of the transfer film 10 manufactured by the above-mentioned manufacturing method. As a method of manufacturing the transfer film 10, a process including a dummy support 11, an intermediate layer, and a process including the step of providing the protective film 19 in contact with the surface of the composition layer 17 opposite to the dummy support 11 is provided. 13. The photosensitive composition layer 15 and the transfer film 10 of the protective film 19 are preferred. After the transfer film 10 is produced by the above-mentioned production method, the transfer film in roll form can be produced and stored by winding up the transfer film 10 . The transfer film 10 in the form of a roll can be provided as it is in the step of bonding to a substrate by a roll-to-roll system described later.

又,上述轉印膜10的製造方法可以為在保護膜19上形成組成物層17之方法。In addition, the method of manufacturing the transfer film 10 described above may be a method of forming the composition layer 17 on the protective film 19 .

<水溶性樹脂組成物及中間層(水溶性樹脂層)的形成方法> 水溶性樹脂組成物包含形成上述中間層(水溶性樹脂層)之各種成分和溶劑為較佳。另外,在水溶性樹脂組成物中,各成分相對於組成物的總固體成分之含量的較佳範圍與各成分相對於上述水溶性樹脂層的總質量之含量的較佳範圍相同。 作為溶劑,只要能夠溶解或分散水溶性樹脂,則不受特別限制,選自包括水及水混合性有機溶劑之群組中之至少一種為較佳,水或水與水混合性有機溶劑的混合溶劑為更佳。 作為水混合性有機溶劑,例如可以舉出碳數1~3的醇、丙酮、乙二醇及甘油,碳數1~3的醇為較佳,甲醇或乙醇為更佳。 溶劑可以單獨使用一種,亦可以使用兩種以上。 溶劑的含量相對於組成物的總固體成分100質量份為50~2,500質量份為較佳,50~1,900質量份為更佳,100~900質量份為進一步較佳。 <Method for forming water-soluble resin composition and intermediate layer (water-soluble resin layer)> The water-soluble resin composition preferably contains various components and a solvent that form the above-mentioned intermediate layer (water-soluble resin layer). In addition, in the water-soluble resin composition, the preferable range of the content of each component with respect to the total solid content of the composition is the same as the preferable range of the content of each component with respect to the total mass of the above-mentioned water-soluble resin layer. The solvent is not particularly limited as long as it can dissolve or disperse the water-soluble resin. At least one selected from the group consisting of water and water-miscible organic solvents is preferred. Water or a mixture of water and water-miscible organic solvents A solvent is more preferred. Examples of the water-miscible organic solvent include alcohols having 1 to 3 carbon atoms, acetone, ethylene glycol, and glycerin, and alcohols having 1 to 3 carbon atoms are preferred, and methanol or ethanol is more preferred. One kind of solvent may be used alone, or two or more kinds may be used. The content of the solvent is preferably from 50 to 2,500 parts by mass, more preferably from 50 to 1,900 parts by mass, and still more preferably from 100 to 900 parts by mass, based on 100 parts by mass of the total solid content of the composition.

水溶性樹脂層的形成方法只要為能夠形成包含上述成分之層之方法,則不受特別限制,例如可以舉出公知的塗佈方法(例如,狹縫塗佈、旋塗、簾塗及噴墨塗佈等)。The formation method of the water-soluble resin layer is not particularly limited as long as it is a method capable of forming a layer comprising the above-mentioned components, for example, known coating methods (such as slit coating, spin coating, curtain coating and inkjet coating) coating, etc.).

<感光性組成物及感光性組成物層的形成方法> 作為感光性組成物,如上所述。 在生產性優異的觀點上,使用已敘述的感光性組成物並藉由塗佈法形成為較佳。 作為轉印膜的製造方法,具體而言,在中間層上塗佈感光性組成物而形成塗膜,並對該塗膜在既定溫度下實施乾燥處理而形成感光性組成物層之方法為較佳。 <Formation method of photosensitive composition and photosensitive composition layer> As a photosensitive composition, it is as above-mentioned. From the viewpoint of excellent productivity, it is preferable to use the photosensitive composition described above and form it by a coating method. As a method for producing a transfer film, specifically, a method of coating a photosensitive composition on an intermediate layer to form a coating film, and drying the coating film at a predetermined temperature to form a photosensitive composition layer is relatively good.

作為感光性組成物的塗佈方法,例如可以舉出印刷法、噴塗法、輥塗法、棒塗法、簾塗法、旋塗法及模塗法(亦即,狹縫塗佈法)。Examples of coating methods for the photosensitive composition include printing, spray coating, roll coating, bar coating, curtain coating, spin coating, and die coating (ie, slit coating).

作為感光性組成物的塗膜的乾燥方法,加熱乾燥及減壓乾燥為較佳。 乾燥溫度為80℃以上為較佳,90℃以上為更佳。上限為130℃以下為較佳,120℃以下為更佳。 又,乾燥時間為20秒以上為較佳,40秒以上為更佳,60秒以上為進一步較佳。上限為600秒以下為較佳,300秒以下為更佳。 As a method of drying the coating film of the photosensitive composition, heat drying and reduced-pressure drying are preferable. The drying temperature is preferably 80°C or higher, more preferably 90°C or higher. The upper limit is preferably 130°C or lower, more preferably 120°C or lower. Also, the drying time is preferably at least 20 seconds, more preferably at least 40 seconds, and still more preferably at least 60 seconds. The upper limit is preferably 600 seconds or less, more preferably 300 seconds or less.

再者,藉由將保護膜貼合於感光性組成物層,能夠製造轉印膜。 作為將保護膜貼合於感光性組成物層之方法,例如可以舉出公知的方法。 作為將保護膜貼合於感光性組成物層之裝置,例如可以舉出真空層壓機及自動切割層壓機等公知的層壓機。 層壓機為具備橡膠輥等任意的能夠加熱之輥且能夠加壓及加熱者為較佳。 Furthermore, a transfer film can be manufactured by bonding a protective film to a photosensitive composition layer. As a method of bonding a protective film to a photosensitive composition layer, a well-known method is mentioned, for example. As an apparatus which bonds a protective film to a photosensitive composition layer, well-known laminators, such as a vacuum laminator and an automatic cutting laminator, are mentioned, for example. The laminator is preferably equipped with any heatable roll such as a rubber roll, and is capable of pressurization and heating.

[具有導體圖案之積層體之製造方法] 藉由使用上述轉印膜,還能夠製造具有導體圖案之積層體。 具有導體圖案之積層體之製造方法只要為使用上述轉印膜之具有導體圖案之積層體之製造方法,則不受特別限制。 其中,本發明的具有導體圖案之積層體之製造方法為如下的具有導體圖案之積層體之製造方法為較佳,其具有: 貼合步驟,以轉印膜的與偽支撐體側相反之面與表面具有導電層之基板的導電層接觸之方式,將轉印膜和基板進行貼合; 曝光步驟,對感光性組成物層進行圖案曝光; 光阻圖案形成步驟,對經曝光之感光性組成物層實施顯影處理而形成光阻圖案; 蝕刻步驟或電鍍處理步驟,對位於未配置有光阻圖案之區域之導電層進行蝕刻處理或電鍍處理;及 光阻圖案剝離步驟,剝離光阻圖案, 當具有電鍍處理步驟時,進一步具有去除因光阻圖案剝離步驟而露出之導電層並在基板上形成導體圖案之去除步驟,其中 在貼合步驟與曝光步驟之間或曝光步驟與顯影步驟之間進一步具有剝離偽支撐體之偽支撐體剝離步驟。 又,具有導體圖案之積層體之製造方法依序具有上述貼合步驟、上述曝光步驟、上述光阻圖案形成步驟、上述蝕刻步驟或上述電鍍處理步驟、上述光阻圖案剝離步驟、上述去除步驟(當具有上述電鍍處理步驟時)為較佳。 [Manufacturing method of laminated body having conductive pattern] By using the above transfer film, it is also possible to manufacture a laminate having a conductor pattern. The method of manufacturing the layered body having a conductive pattern is not particularly limited as long as it is a method of manufacturing a layered body having a conductive pattern using the transfer film described above. Among them, the method for manufacturing a laminate with a conductor pattern of the present invention is preferably the following method for manufacturing a laminate with a conductor pattern, which has: A bonding step, bonding the transfer film and the substrate in such a way that the surface of the transfer film opposite to the side of the dummy support is in contact with the conductive layer of the substrate having a conductive layer on the surface; Exposure step, pattern exposure of the photosensitive composition layer; Photoresist pattern forming step, performing development treatment on the exposed photosensitive composition layer to form a photoresist pattern; Etching step or electroplating treatment step, performing etching treatment or electroplating treatment on the conductive layer located in the area where the photoresist pattern is not arranged; and a photoresist pattern stripping step, stripping the photoresist pattern, When there is an electroplating treatment step, there is further a removal step of removing the conductive layer exposed due to the photoresist pattern stripping step and forming a conductive pattern on the substrate, wherein Between the bonding step and the exposure step or between the exposure step and the development step, there is further a dummy support peeling step for peeling off the dummy support. In addition, the method for manufacturing a laminate having a conductive pattern includes the above lamination step, the above exposure step, the above photoresist pattern formation step, the above etching step or the above plating treatment step, the above photoresist pattern stripping step, and the above removal step ( When having the above electroplating treatment step) is preferred.

又,在具有導體圖案之積層體之製造方法中,在光阻圖案形成步驟與光阻圖案剝離步驟之間以進行基於特定光酸產生劑的擴散之酸分解性基X的酸分解為目的而進一步具有加熱步驟為較佳。加熱步驟只要在光阻圖案形成步驟與光阻圖案剝離步驟之間實施,則其實施時期不受特別限制,其中,在蝕刻步驟或電鍍步驟與光阻圖案剝離步驟之間實施為較佳。In addition, in the method of manufacturing a laminate having a conductive pattern, between the photoresist pattern forming step and the photoresist pattern stripping step, acid decomposition of the acid-decomposable group X based on the diffusion of a specific photoacid generator is performed. It is preferable to further have a heating step. The heating step is not particularly limited as long as it is performed between the photoresist pattern forming step and the photoresist pattern stripping step, and it is preferably performed between the etching step or the electroplating step and the photoresist pattern stripping step.

以下,對具有導體圖案之積層體之製造方法的各步驟進行說明。Hereinafter, each step of the manufacturing method of the laminated body which has a conductor pattern is demonstrated.

<貼合步驟> 貼合步驟為如下步驟:對於具有偽支撐體和感光性組成物層之轉印膜,以上述感光性組成物層與表面具有導電層之基板的上述導電層接觸之方式,將轉印膜和上述基板進行貼合。 當轉印膜具有後述之保護膜時,在剝離保護膜之後實施貼合步驟為較佳。 轉印膜在偽支撐體與感光性組成物層之間進一步具有中間層亦為較佳。 關於轉印膜,如上所述。 <Fitting procedure> The bonding step is as follows: For the transfer film having a pseudo-support and a photosensitive composition layer, the transfer film and The above substrates are bonded together. When the transfer film has a protective film described later, it is preferable to carry out the bonding step after peeling the protective film. It is also preferable that the transfer film further has an intermediate layer between the dummy support and the photosensitive composition layer. About the transfer film, it is as above-mentioned.

在貼合中,使轉印膜的感光性組成物層側(與偽支撐體側相反的一側的表面)與基板上的導電層接觸而進行壓接為較佳。 作為壓接方法,例如可以舉出公知的轉印方法及層壓方法,將轉印膜的感光性組成物層的與偽支撐體側相反的一側的表面重疊於基板並利用輥等進行加壓及加熱之方法為較佳。 作為貼合方法,例如可以舉出使用真空層壓機及自動切割層壓機等公知的層壓機之方法。 層壓溫度為70~130℃為較佳。 In bonding, it is preferable to press-bond the photosensitive composition layer side (the surface opposite to the dummy support side) of the transfer film in contact with the conductive layer on the substrate. As the pressure-bonding method, for example, a known transfer method and a lamination method can be mentioned. The surface of the photosensitive composition layer of the transfer film on the side opposite to the dummy support is superimposed on the substrate and applied with a roller or the like. The methods of pressing and heating are preferred. As a bonding method, the method of using a well-known laminator, such as a vacuum laminator and an automatic cutting laminator, is mentioned, for example. The lamination temperature is preferably 70-130°C.

表面具有導電層之基板(附有導電層之基板)具有基板和配置於基板的表面之導電層。 附有導電層之基板可以在基板上根據需要形成有除上述導電層以外的任意的層。亦即,附有導電層之基板至少具有基板和配置於基板的表面之導電層為較佳。 作為基板,例如可以舉出樹脂基板、玻璃基板、陶瓷基板及半導體基板,國際公開第2018/155193號的[0140]段落中所記載之基板為較佳。 作為樹脂基板的材料,聚對酞酸乙二酯、環烯烴聚合物或聚醯亞胺為較佳。 樹脂基板的厚度為5~200μm為較佳,10~100μm為更佳。 A substrate having a conductive layer on its surface (a substrate with a conductive layer) has a substrate and a conductive layer arranged on the surface of the substrate. Substrate with conductive layer Any layer other than the above-mentioned conductive layer may be formed on the substrate as needed. That is, it is preferable that the substrate with a conductive layer has at least a substrate and a conductive layer arranged on the surface of the substrate. Examples of the substrate include resin substrates, glass substrates, ceramic substrates, and semiconductor substrates, and the substrates described in paragraph [0140] of International Publication No. 2018/155193 are preferred. As the material of the resin substrate, polyethylene terephthalate, cycloolefin polymer, or polyimide is preferable. The thickness of the resin substrate is preferably 5 to 200 μm, more preferably 10 to 100 μm.

作為導電層,從導電性及細線形成性的觀點而言,選自包括金屬層、導電性金屬氧化物層、石墨層、碳奈米管層及導電聚合物層之群組中之至少一種層為較佳。 又,基板上可以僅配置1層導電層,亦可以配置2層以上。當配置2層以上的導電層時,具有不同材質的導電層為較佳。 作為導電層的較佳態樣,例如在國際公開第2018/155193號的[0141]段落中有記載,其內容被編入本說明書中。 As the conductive layer, at least one layer selected from the group consisting of a metal layer, a conductive metal oxide layer, a graphite layer, a carbon nanotube layer, and a conductive polymer layer from the viewpoint of conductivity and thin line formability is better. In addition, only one conductive layer may be arranged on the substrate, or two or more layers may be arranged. When disposing two or more conductive layers, conductive layers having different materials are preferred. As a preferred aspect of the conductive layer, for example, it is described in paragraph [0141] of International Publication No. 2018/155193, and the content thereof is incorporated in this specification.

導電層為金屬層為較佳。 金屬層係包含金屬之層,作為金屬,並不受特別限制,能夠使用公知的金屬。 作為金屬層的主成分(所謂的主金屬),例如可以舉出銅、鉻、鉛、鎳、金、銀、錫及鋅。另外,“主成分”係指金屬層中所包含之金屬中含量最大的金屬。 The conductive layer is preferably a metal layer. The metal layer is a layer containing metal, and the metal is not particularly limited, and known metals can be used. Examples of the main component (so-called main metal) of the metal layer include copper, chromium, lead, nickel, gold, silver, tin, and zinc. In addition, the "main component" refers to the metal with the largest content among the metals contained in the metal layer.

作為金屬層的形成方法,並不受特別限制,例如可以舉出塗佈分散有金屬微粒之分散液並對塗膜進行燒結之方法、濺射法及蒸鍍法等公知的方法。The method of forming the metal layer is not particularly limited, and examples thereof include known methods such as a method of applying a dispersion liquid in which fine metal particles are dispersed and firing the coating film, sputtering, and vapor deposition.

金屬層的厚度並不受特別限制,50nm以上為較佳,100nm以上為更佳。上限為2μm以下為較佳。The thickness of the metal layer is not particularly limited, and is preferably greater than 50 nm, more preferably greater than 100 nm. The upper limit is preferably 2 μm or less.

基板上可以配置1層或2層以上的金屬層。 當配置2層以上的金屬層時,配置2層以上之金屬層彼此可以相同或不同,不同材質的金屬層為較佳。 One or more metal layers may be disposed on the substrate. When two or more metal layers are arranged, the two or more metal layers may be the same or different from each other, and metal layers of different materials are preferred.

作為具有導電層之基板,可以為具有透明電極及佈置配線中的至少一者之基板。如上所述的基板能夠較佳地用作觸控面板用基板。 透明電極能夠較佳地作為觸控面板用電極發揮作用。 透明電極由ITO(氧化銦錫)及IZO(氧化銦鋅)等金屬氧化膜以及金屬網及金屬奈米線等金屬細線構成為較佳。 作為金屬細線,可以舉出銀、銅等的細線。其中,銀網及銀奈米線等銀導電性材料為較佳。 The substrate having a conductive layer may be a substrate having at least one of transparent electrodes and wiring. Such a substrate can be suitably used as a substrate for a touch panel. A transparent electrode can function preferably as an electrode for touch panels. The transparent electrodes are preferably composed of metal oxide films such as ITO (indium tin oxide) and IZO (indium zinc oxide), and thin metal wires such as metal meshes and metal nanowires. Examples of thin metal wires include thin wires of silver, copper, and the like. Among them, silver conductive materials such as silver mesh and silver nanowires are preferred.

作為佈置配線的材質,金屬為較佳。 關於作為佈置配線的材質的金屬,可以舉出金、銀、銅、鉬、鋁、鈦、鉻、鋅及錳以及由該等金屬元素的兩種以上形成之合金。作為佈置配線的材質,銅、鉬、鋁或鈦為較佳,銅為特佳。 As a material for laying out wiring, metal is preferable. The metal used as the material of the wiring includes gold, silver, copper, molybdenum, aluminum, titanium, chromium, zinc and manganese, and alloys of two or more of these metal elements. As a material for laying out wiring, copper, molybdenum, aluminum or titanium are preferable, and copper is particularly preferable.

<曝光步驟> 曝光步驟為對感光性組成物層進行曝光之步驟,進行圖案曝光之步驟為較佳。 “圖案曝光”為以圖案狀曝光之形態,係指存在曝光部和未曝光部之形態的曝光。 圖案曝光中的曝光部(曝光區域)與未曝光部(未曝光區域)的位置關係能夠適當調整。 關於曝光方向,可以從感光性組成物層側或與感光性組成物層側相反的一側(基板側)進行曝光。 作為曝光步驟中的曝光方式,例如可以舉出遮罩曝光、直接成像曝光及投影曝光,遮罩曝光為較佳。 <Exposure steps> The exposure step is a step of exposing the photosensitive composition layer, preferably a step of pattern exposure. "Pattern exposure" means exposure in a patterned form, and refers to exposure in a form in which exposed parts and unexposed parts exist. The positional relationship between the exposed part (exposed area) and the unexposed part (unexposed area) in pattern exposure can be adjusted suitably. Regarding the exposure direction, exposure may be performed from the side of the photosensitive composition layer or the side (substrate side) opposite to the side of the photosensitive composition layer. Examples of the exposure method in the exposure step include mask exposure, direct imaging exposure, and projection exposure, and mask exposure is preferred.

當在貼合步驟與曝光步驟之間進行了後述之偽支撐體剝離步驟時,作為曝光步驟,使偽支撐體剝離步驟中所得到之偽支撐體已被剝離之積層體的與基板側相反的一側的表面與遮罩接觸而進行圖案曝光之曝光步驟為較佳。換言之,使偽支撐體已被剝離之積層體的因剝離偽支撐體而露出之表面(感光層的表面或中間層的表面等)與遮罩接觸而對感光性組成物層進行圖案曝光之曝光步驟為較佳。另外,作為上述露出之表面,當轉印膜為偽支撐體與感光性組成物層的2層構成時,感光性組成物層的表面對應於此,當轉印膜為偽支撐體、中間層及感光性組成物層的3層構成時,中間層的表面對應於此。 若採用這種曝光步驟,則可得到更高精細的光阻圖案,最終可得到更高精細的導體圖案。 尤其在貼合步驟與曝光步驟之間進行了後述之偽支撐體剝離步驟時,採用這種曝光步驟為較佳。 When the dummy support peeling step described later is carried out between the bonding step and the exposure step, as the exposure step, the side of the layered body from which the dummy support has been peeled off in the dummy support peeling step is made to be opposite to the substrate side The exposure step of performing pattern exposure by contacting one surface with a mask is preferable. In other words, the exposure of the photosensitive composition layer by bringing the exposed surface (the surface of the photosensitive layer, the surface of the intermediate layer, etc.) steps are better. In addition, as the above-mentioned exposed surface, when the transfer film is composed of two layers of a dummy support and a photosensitive composition layer, the surface of the photosensitive composition layer corresponds to this, and when the transfer film is a dummy support, an intermediate layer In the case of a three-layer constitution of the photosensitive composition layer, the surface of the intermediate layer corresponds to this. If this exposure step is adopted, a higher-definition photoresist pattern can be obtained, and a higher-definition conductor pattern can be finally obtained. In particular, it is preferable to use such an exposure step when the dummy support peeling step described later is performed between the bonding step and the exposure step.

當為上述進行圖案曝光之曝光步驟時,在感光性組成物層的曝光區域(相當於遮罩的開口部之區域)中,有可能產生感光性組成物層中所包含之成分的硬化反應。藉由在曝光之後實施顯影步驟,感光性組成物層的未曝光區域被去除而形成圖案。In the exposure step of performing pattern exposure as described above, a curing reaction of components contained in the photosensitive composition layer may occur in the exposed region (region corresponding to the opening of the mask) of the photosensitive composition layer. By performing a developing step after exposure, unexposed regions of the photosensitive composition layer are removed to form a pattern.

在曝光步驟與顯影處理之間具有剝離曝光步驟中所使用之遮罩之遮罩剝離步驟亦為較佳。 作為遮罩剝離步驟,例如可以舉出公知的剝離步驟。 It is also preferable to have a mask stripping step of stripping the mask used in the exposure step between the exposure step and the development treatment. As a mask peeling process, a well-known peeling process can be mentioned, for example.

作為圖案曝光的光源,只要能夠照射至少能夠使感光性組成物層硬化之波長區域的光(例如,波長365nm或波長405nm等的光)即可,主波長為365nm為較佳。“主波長”係指強度最高的波長。As a light source for pattern exposure, any light in the wavelength range capable of curing the photosensitive composition layer (for example, light with a wavelength of 365 nm or 405 nm) can be irradiated, and the dominant wavelength is preferably 365 nm. "Dominant wavelength" means the wavelength of highest intensity.

作為光源,例如可以舉出各種雷射、發光二極體(LED)、超高壓水銀燈、高壓水銀燈及金屬鹵化物燈。 曝光量為5~200mJ/cm 2為較佳,10~200mJ/cm 2為更佳。 作為光源、曝光量及曝光方法,例如可以舉出國際公開第2018/155193號的[0146]~[0147]段落,該等內容被編入本說明書中。 Examples of light sources include various lasers, light emitting diodes (LEDs), ultra-high pressure mercury lamps, high pressure mercury lamps, and metal halide lamps. The exposure amount is preferably 5 to 200 mJ/cm 2 , more preferably 10 to 200 mJ/cm 2 . Examples of the light source, exposure amount, and exposure method include paragraphs [0146] to [0147] of International Publication No. 2018/155193, and these contents are incorporated in this specification.

<偽支撐體剝離步驟> 在貼合步驟與曝光步驟之間或曝光步驟與顯影步驟之間進行偽支撐體剝離步驟。 其中,在上述貼合步驟與上述曝光步驟之間具有剝離步驟為較佳。 剝離步驟為從轉印膜與附有導電層之基板的積層體剝離偽支撐體之步驟。 作為偽支撐體的剝離方法,例如可以舉出公知的剝離方法。具體而言,可以舉出日本特開2010-072589號公報的[0161]~[0162]段落中所記載之覆蓋膜剝離機構。 <Pseudo-support stripping step> The dummy support stripping step is performed between the bonding step and the exposure step or between the exposure step and the development step. Among them, it is preferable to have a peeling step between the bonding step and the exposing step. The peeling step is a step of peeling off the dummy support from the laminate of the transfer film and the substrate with the conductive layer. As the method of peeling off the pseudo-support, for example, known peeling methods can be mentioned. Specifically, there may be mentioned the cover film peeling mechanism described in paragraphs [0161] to [0162] of JP-A-2010-072589.

<光阻圖案形成步驟> 光阻圖案形成步驟為對經曝光之感光性組成物層實施顯影處理而形成光阻圖案之步驟。 顯影處理使用顯影液來實施為較佳。 藉由使用上述顯影液進行顯影,感光性組成物層的未曝光區域被去除而形成將遮罩的開口部作為凸部之光阻圖案。 <Resist pattern formation process> The step of forming a photoresist pattern is a step of performing a development process on the exposed photosensitive composition layer to form a photoresist pattern. It is preferable to carry out the development process using a developer. By developing using the above-mentioned developing solution, the unexposed region of the photosensitive composition layer is removed, and a resist pattern having the openings of the mask as protrusions is formed.

作為顯影液,包含鹼金屬鹽之鹼性水溶液為較佳。 顯影液中所包含之鹼金屬鹽為溶解於水中並顯示出鹼性之化合物為較佳。 作為鹼金屬鹽,例如可以舉出氫氧化鈉、氫氧化鉀、碳酸鈉、碳酸鉀、碳酸氫鈉及碳酸氫鉀。 顯影液可以包含除鹼金屬鹽以外的溶解於水中並顯示出鹼性之化合物。作為上述化合物,例如可以舉出氫氧化四甲基銨、氫氧化四乙基銨、氫氧化四丙基銨、氫氧化四丁基銨及膽鹼(2-羥基乙基三甲基氫氧化銨)。 As a developing solution, an alkaline aqueous solution containing an alkali metal salt is preferable. The alkali metal salt contained in the developer is preferably a compound that dissolves in water and exhibits basicity. Examples of alkali metal salts include sodium hydroxide, potassium hydroxide, sodium carbonate, potassium carbonate, sodium hydrogencarbonate, and potassium hydrogencarbonate. The developer may contain a compound that dissolves in water and exhibits basicity other than alkali metal salts. As the above compound, for example, tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide and choline (2-hydroxyethyltrimethylammonium hydroxide ).

進行顯影處理時的顯影液的液溫為10~50℃為較佳,15~40℃為更佳,20~35℃為進一步較佳。 進行顯影處理時的顯影液的pH為9以上為較佳,10以上為更佳,11以上為進一步較佳。上限為14以下為較佳,未達13為更佳。pH能夠使用公知的pH計並利用遵照JIS Z8802-1984之方法來測量。pH的測量溫度設為25℃。 As for the liquid temperature of the developer at the time of developing processing, 10-50 degreeC is preferable, 15-40 degreeC is more preferable, 20-35 degreeC is still more preferable. The pH of the developer at the time of developing is preferably 9 or higher, more preferably 10 or higher, and still more preferably 11 or higher. The upper limit is preferably 14 or less, more preferably less than 13. pH can be measured by the method based on JIS Z8802-1984 using a well-known pH meter. The measurement temperature of pH was set at 25°C.

在顯影液中,水的含量相對於顯影液的總質量為50.0質量%以上且未達100質量%為較佳,90.0質量%以上且未達100質量%為更佳。 在顯影液中,鹼金屬鹽的含量相對於顯影液的總質量為0.01~20.0質量%為較佳,0.1~10.0質量%為更佳。 The content of water in the developer is preferably at least 50.0% by mass and less than 100% by mass, more preferably at least 90.0% by mass and less than 100% by mass, based on the total mass of the developer. In the developer, the content of the alkali metal salt is preferably 0.01 to 20.0% by mass, more preferably 0.1 to 10.0% by mass, based on the total mass of the developer.

作為顯影方法,例如可以舉出公知的顯影方法。 具體而言,可以舉出旋覆浸沒顯影、噴淋顯影、旋轉顯影及浸漬顯影。 作為顯影方法,國際公開第2015/093271號的[0195]段落中所記載之顯影方法為較佳。 As an image development method, a well-known image development method is mentioned, for example. Specifically, spin-on-dip image development, shower image development, spin image development, and immersion image development are mentioned. As a developing method, the developing method described in paragraph [0195] of International Publication No. 2015/093271 is preferable.

在顯影之後且轉移到下一個步驟之前,實施去除殘留於附有導電層之基板上之顯影液之沖洗處理亦為較佳。沖洗處理中能夠使用水等。 在顯影及/或沖洗處理之後,可以進行從附有導電層之基板上去除多餘的液體之乾燥處理。 It is also preferable to perform a rinsing process for removing the developing solution remaining on the substrate with the conductive layer after the development and before transferring to the next step. Water or the like can be used for the rinsing treatment. After the developing and/or rinsing process, a drying process may be performed to remove excess liquid from the substrate with the conductive layer.

形成於附有導電層之基板上之光阻圖案的位置及大小並不受特別限制,但細線狀為較佳。 具體而言,光阻圖案的線寬為20μm以下為較佳,15μm以下為更佳,10μm以下為進一步較佳,5μm以下為特佳。下限為1.0μm以上的情況多。 The position and size of the photoresist pattern formed on the substrate with the conductive layer are not particularly limited, but a thin line shape is preferred. Specifically, the line width of the photoresist pattern is preferably 20 μm or less, more preferably 15 μm or less, further preferably 10 μm or less, and particularly preferably 5 μm or less. The lower limit is often 1.0 μm or more.

<後曝光步驟> 在顯影步驟與後述之蝕刻步驟之間可以具有進一步對在附有導電層之基板上得到之光阻圖案進行曝光之步驟(以下,亦稱為“後曝光步驟”。)。 後曝光步驟中的曝光量為100~5000mJ/cm 2為較佳,200~3000mJ/cm 2為更佳。 <Post-exposure step> A step of further exposing the photoresist pattern obtained on the substrate with a conductive layer (hereinafter also referred to as "post-exposure step") may be provided between the development step and the etching step described later. The exposure amount in the post-exposure step is preferably 100 to 5000 mJ/cm 2 , more preferably 200 to 3000 mJ/cm 2 .

<蝕刻步驟> 蝕刻步驟為對位於未配置有光阻圖案之區域之上述導電層進行蝕刻處理之步驟。 具體而言,為如下步驟:在蝕刻步驟中,將直至上述步驟為止得到之光阻圖案用作蝕刻阻劑,對導電層進行蝕刻處理。 若實施蝕刻步驟,則在光阻圖案的開口部,導電層被去除,導電層會具有與光阻圖案相同的圖案形狀。 <Etching step> The etching step is a step of etching the above-mentioned conductive layer in the region where the photoresist pattern is not arranged. Specifically, in an etching process, it is a process of performing an etching process on a conductive layer using the photoresist pattern obtained up to the said process as an etching resist. If the etching step is performed, the conductive layer will be removed at the opening of the photoresist pattern, and the conductive layer will have the same pattern shape as the photoresist pattern.

作為蝕刻處理的方法,例如可以舉出公知的蝕刻方法。 具體而言,可以舉出日本特開2017-120435號公報的[0209]~[0210]段落中所記載之方法、日本特開2010-152155號公報的[0048]~[0054]段落中所記載之方法、浸漬於蝕刻液中之濕式蝕刻及電漿蝕刻等乾式蝕刻。 As a method of the etching treatment, for example, a known etching method can be mentioned. Specifically, the method described in paragraphs [0209] to [0210] of JP-A-2017-120435 and the method described in paragraphs [0048]-[0054] of JP-A-2010-152155 can be mentioned. method, wet etching immersed in etching solution, and dry etching such as plasma etching.

用於濕式蝕刻之蝕刻液能夠根據蝕刻的對象而適當選擇酸性或鹼性的蝕刻液。 作為酸性蝕刻液,例如可以舉出包含至少一種酸性化合物之酸性水溶液以及酸性化合物與選自包括氯化鐵、氟化銨及過錳酸鉀之群組中之至少一種的酸性混合水溶液。 作為酸性水溶液中所包含之酸性化合物(溶解於水中並顯示出酸性之化合物),選自包括鹽酸、硫酸、硝酸、乙酸、氟酸、草酸及磷酸之群組中之至少一種為較佳。 作為鹼性蝕刻液,例如可以舉出包含至少一種鹼性化合物之鹼性水溶液及鹼性化合物與鹽(例如,過錳酸鉀等)的鹼性混合水溶液。 作為鹼性水溶液中所包含之鹼性化合物(溶解於水中並顯示出鹼性之化合物),例如選自包括氫氧化鈉、氫氧化鉀、氨、有機胺及有機胺的鹽(例如,氫氧化四甲基銨等)之群組中之至少一種為較佳。 蝕刻液不溶解光阻圖案為較佳。 顯影步驟中使用之顯影液可以兼作用於蝕刻處理之蝕刻液。在該情況下,可以同時實施顯影步驟和蝕刻步驟。 As the etchant used for wet etching, an acidic or alkaline etchant can be appropriately selected according to the object to be etched. Examples of the acidic etching solution include an acidic aqueous solution containing at least one acidic compound and an acidic mixed aqueous solution of an acidic compound and at least one selected from the group consisting of ferric chloride, ammonium fluoride, and potassium permanganate. At least one selected from the group consisting of hydrochloric acid, sulfuric acid, nitric acid, acetic acid, hydrofluoric acid, oxalic acid and phosphoric acid is preferred as the acidic compound (a compound that dissolves in water and exhibits acidity) contained in the acidic aqueous solution. Examples of the alkaline etching solution include an alkaline aqueous solution containing at least one alkaline compound and an alkaline mixed aqueous solution of an alkaline compound and a salt (for example, potassium permanganate, etc.). As the basic compound contained in the alkaline aqueous solution (a compound that dissolves in water and exhibits basicity), for example, it is selected from sodium hydroxide, potassium hydroxide, ammonia, organic amines, and salts of organic amines (for example, hydroxide At least one of the group of tetramethylammonium, etc.) is preferred. It is preferable that the etching solution does not dissolve the photoresist pattern. The developing solution used in the developing step can also be used as an etching solution for etching. In this case, the developing step and the etching step may be performed simultaneously.

在蝕刻處理之後且轉移到下一個步驟之前,實施去除殘留於附有導電層之基板上之蝕刻液之沖洗處理亦為較佳。沖洗處理中能夠使用水等。 在蝕刻處理及/或沖洗處理之後,可以進行從附有導電層之基板上去除多餘的液體之乾燥處理。 It is also preferable to perform a rinsing process for removing the etching solution remaining on the substrate with the conductive layer after the etching process and before transferring to the next step. Water or the like can be used for the rinsing treatment. After the etching process and/or the rinsing process, a drying process may be performed to remove excess liquid from the substrate with the conductive layer.

<電鍍處理步驟> 電鍍處理步驟為如下步驟;在位於未配置有光阻圖案之區域之導電層(因顯影步驟而於表面露出之導電層)上藉由電鍍處理形成電鍍層。 作為電鍍處理的方法,例如可以舉出電解電鍍法及無電解電鍍法,從生產性的觀點而言,電解電鍍法為較佳。 若實施電鍍步驟,則可得到在附有導電層之基板上具有與未配置有光阻圖案之區域(光阻圖案的開口部)相同的圖案形狀之電鍍層。 <Plating treatment steps> The electroplating treatment step is the following step; an electroplating layer is formed by electroplating treatment on the conductive layer (conductive layer exposed on the surface due to the development step) located in the area where the photoresist pattern is not arranged. As a method of electroplating treatment, an electrolytic plating method and an electroless plating method are mentioned, for example, The electrolytic plating method is preferable from a viewpoint of productivity. If the electroplating step is performed, an electroplating layer having the same pattern shape as the region (opening of the photoresist pattern) on which the photoresist pattern is not arranged on the substrate with the conductive layer can be obtained.

作為電鍍層中所包含之金屬,例如可以舉出公知的金屬。 具體而言,可以舉出銅、鉻、鉛、鎳、金、銀、錫及鋅等金屬以及該等金屬的合金。 其中,從導電圖案的導電性更優異的觀點而言,電鍍層包含銅或其合金為較佳。又,從導電圖案的導電性更優異的觀點而言,電鍍層包含銅作為主成分為較佳。 As a metal contained in a plating layer, a well-known metal is mentioned, for example. Specifically, metals such as copper, chromium, lead, nickel, gold, silver, tin, and zinc, and alloys of these metals are mentioned. Among these, it is preferable that the electroplating layer contains copper or its alloy from the viewpoint that the electroconductivity of a conductive pattern is more excellent. Moreover, it is preferable that an electroplating layer contains copper as a main component from a viewpoint of the electroconductivity of a conductive pattern being more excellent.

電鍍層的厚度為0.1μm以上為較佳,1μm為更佳。上限為20μm以下為較佳。The thickness of the plating layer is preferably at least 0.1 μm, more preferably 1 μm. The upper limit is preferably 20 μm or less.

<保護層形成步驟> 在電鍍處理步驟與後述之光阻圖案剝離步驟之間具有保護層形成步驟亦為較佳。 保護層形成步驟為在電鍍層上形成保護層之步驟。 作為保護層的材料,具有針對光阻圖案剝離步驟及/或去除步驟中的剝離液及/或蝕刻液之耐性之材料為較佳。例如,可以舉出鎳、鉻、錫、鋅、鎂、金、銀等金屬、該等的合金及樹脂,鎳或鉻為較佳。 <Protective layer formation process> It is also preferable to have a protective layer forming step between the plating treatment step and the resist pattern stripping step described later. The protective layer forming step is a step of forming a protective layer on the plating layer. As a material of the protective layer, a material having resistance to the stripping liquid and/or etching liquid in the resist pattern stripping step and/or removing step is preferable. Examples thereof include metals such as nickel, chromium, tin, zinc, magnesium, gold, and silver, alloys thereof, and resins, with nickel or chromium being preferred.

作為保護層的形成方法,例如可以舉出無電解電鍍法、電鍍法等,電鍍法為較佳。As a method of forming the protective layer, for example, an electroless plating method, an electroplating method, etc. are mentioned, and an electroplating method is preferable.

保護層的厚度為0.3μm以上為較佳,0.5μm以上為更佳。上限為3.0μm以下為較佳,2.0μm以下為更佳。The thickness of the protective layer is preferably at least 0.3 μm, more preferably at least 0.5 μm. The upper limit is preferably 3.0 μm or less, more preferably 2.0 μm or less.

<蝕刻步驟或電鍍步驟之後的曝光步驟> 在蝕刻步驟或電鍍步驟之後且實施後述之剝離步驟之前(換言之,在蝕刻步驟或電鍍步驟之後與後述之剝離步驟之間),可以具有對在附有導電層之基板上得到之光阻圖案進行曝光之步驟(較佳為進行全面曝光之步驟)。 蝕刻步驟或電鍍步驟之後的曝光波長為光阻圖案中所包含之特定光酸產生劑的感光波長且為能夠使特定酸產生劑裂解而產生酸之波長(例如,波長254nm、313nm、365nm)為較佳。 作為光源,例如可以舉出各種雷射、發光二極體(LED)、超高壓水銀燈、高壓水銀燈及金屬鹵化物燈。 上述曝光步驟中的曝光量為100~5000mJ/cm 2為較佳,200~3000mJ/cm 2為更佳。 尤其,在光阻圖案形成中,當感光性組成物層中的聚合性化合物的硬化反應和特定酸產生劑基於感光之裂解/產生酸的生成不在大致相同的曝光波長的光下進行時(換言之,當在進行感光性組成物層中的聚合性化合物的硬化反應之曝光波長的光下不發生特定酸產生劑基於感光之裂解/產生酸的生成時),具有本曝光步驟為較佳。 <Exposure Step After Etching Step or Plating Step> After the etching step or plating step and before carrying out the peeling step described later (in other words, between the etching step or plating step and the peeling step described later), there may be A step of exposing the photoresist pattern obtained on the substrate of the conductive layer (preferably a step of performing full-scale exposure). The exposure wavelength after the etching step or the plating step is the photosensitive wavelength of the specific photoacid generator contained in the photoresist pattern and is a wavelength capable of cleaving the specific acid generator to generate acid (for example, wavelength 254nm, 313nm, 365nm) is better. Examples of light sources include various lasers, light emitting diodes (LEDs), ultra-high pressure mercury lamps, high pressure mercury lamps, and metal halide lamps. The exposure amount in the above exposure step is preferably 100-5000 mJ/cm 2 , more preferably 200-3000 mJ/cm 2 . In particular, in photoresist pattern formation, when the hardening reaction of the polymerizable compound in the photosensitive composition layer and the photosensitive cleavage/acid generation of a specific acid generator do not proceed under light of approximately the same exposure wavelength (in other words , when the photosensitive cleavage/acid generation of the specific acid generator does not occur under the light of the exposure wavelength for the hardening reaction of the polymerizable compound in the photosensitive composition layer), it is preferable to have this exposure step.

<蝕刻步驟或電鍍步驟之後的加熱步驟> 在蝕刻步驟或電鍍步驟之後且實施後述之剝離步驟之前(換言之,在蝕刻步驟或電鍍步驟之後與後述之剝離步驟之間),可以具有對在附有導電層之基板上得到之光阻圖案進行加熱處理(烘烤處理)之步驟。另外,當實施了上述蝕刻步驟或電鍍步驟之後的曝光步驟時,在上述曝光步驟之後實施為較佳。 烘烤的溫度為60~200℃為較佳,80~180℃為更佳,、90~150℃為進一步較佳。 烘烤時間為20秒~10分鐘為較佳,30秒~5分鐘為更佳,30秒~2分鐘為進一步較佳。 藉由實施本加熱步驟,由特定酸產生劑產生之產生酸擴散而進行基於酸分解性基X的分解之酸基的生成。其結果,在接下來的光阻圖案剝離步驟中,容易從基板剝離光阻圖案。 <Heating step after etching step or plating step> After the etching step or the electroplating step and before the stripping step described later (in other words, between the etching step or the electroplating step and the stripping step described later), it is possible to carry out the photoresist pattern obtained on the substrate with the conductive layer. Step of heat treatment (baking treatment). In addition, when the exposure step after the above-mentioned etching step or plating step is performed, it is preferably performed after the above-mentioned exposure step. The baking temperature is preferably 60 to 200°C, more preferably 80 to 180°C, and still more preferably 90 to 150°C. The baking time is preferably 20 seconds to 10 minutes, more preferably 30 seconds to 5 minutes, and still more preferably 30 seconds to 2 minutes. By performing this heating step, the generated acid generated by the specific acid generator diffuses to generate an acid group based on the decomposition of the acid decomposable group X. As a result, the resist pattern is easily peeled from the substrate in the subsequent resist pattern peeling step.

<光阻圖案剝離步驟> 光阻圖案剝離步驟為去除蝕刻步驟之後殘留之光阻圖案之步驟。 作為去除殘留之光阻圖案之方法,例如可以舉出藉由藥品處理來去除之方法,使用剝離液去除之方法為較佳。 作為去除殘留之光阻圖案之方法,例如可以舉出使用剝離液並藉由噴塗法、噴淋法及旋覆浸沒法等公知的方法去除之方法。 <Resist Pattern Stripping Step> The photoresist pattern stripping step is a step of removing the photoresist pattern remaining after the etching step. As a method of removing the remaining photoresist pattern, for example, a method of removing by chemical treatment is mentioned, and a method of removing using a stripper is preferable. As a method of removing the remaining photoresist pattern, for example, a method of removing by a known method such as a spray method, a shower method, and a spin-on-dip method using a stripping liquid is mentioned.

作為剝離液,例如可以舉出將鹼性化合物溶解於選自包括水、二甲基亞碸及N-甲基吡咯啶酮之群組中之至少一種而成之剝離液。 作為鹼性化合物(溶解於水中並顯示出鹼性之化合物),例如可以舉出氫氧化鈉及氫氧化鉀等鹼性無機化合物以及一級胺化合物、二級胺化合物、三級胺化合物及四級銨鹽化合物等鹼性有機化合物。 As a stripping liquid, for example, a stripping liquid obtained by dissolving a basic compound in at least one selected from the group consisting of water, dimethylsulfoxide, and N-methylpyrrolidone is mentioned. Examples of basic compounds (compounds that dissolve in water and exhibit basicity) include basic inorganic compounds such as sodium hydroxide and potassium hydroxide, primary amine compounds, secondary amine compounds, tertiary amine compounds, and quaternary amine compounds. Basic organic compounds such as ammonium salt compounds.

作為去除方法的較佳態樣,可以舉出在液溫為50~80℃的攪拌中的剝離液中將具有去除對象的圖案之基板浸漬1~30分鐘之方法。 剝離液不溶解導電層亦為較佳。 As a preferable aspect of the removal method, a method of immersing a substrate having a pattern to be removed in a stripping liquid having a liquid temperature of 50 to 80° C. under stirring for 1 to 30 minutes is mentioned. It is also preferable that the stripping solution does not dissolve the conductive layer.

進行剝離處理時的剝離液的液溫為30~80℃為較佳,50~80℃為更佳。 進行剝離處理時的剝離液的pH為11以上為較佳,12以上為更佳,13以上為進一步較佳。上限為14以下為較佳,13.8以下為更佳。pH能夠使用公知的pH計並利用遵照JIS Z8802-1984之方法來測量。pH的測量溫度設為25℃。 進行剝離處理時的剝離液的液溫℃高於進行顯影處理時的顯影液的液溫℃為較佳。具體而言,從上述剝離液的液溫℃減去上述顯影液的液溫℃之值(上述剝離液的液溫℃-上述顯影液的液溫℃)為10℃以上為較佳,20℃以上為更佳。上限為100℃以下為較佳,80℃以下為更佳。 進行剝離處理時的剝離液的pH高於進行顯影處理時的顯影液的pH為較佳。具體而言,從上述剝離液的pH減去上述顯影液的pH之值(上述剝離液的pH-上述顯影液的pH)為1以上為較佳,1.5以上為更佳。上限為5以下為較佳,4以下為更佳。 The liquid temperature of the stripping liquid at the time of performing the stripping treatment is preferably 30 to 80°C, more preferably 50 to 80°C. The pH of the stripping liquid at the time of the stripping treatment is preferably 11 or higher, more preferably 12 or higher, and still more preferably 13 or higher. The upper limit is preferably 14 or less, more preferably 13.8 or less. pH can be measured by the method based on JIS Z8802-1984 using a well-known pH meter. The measurement temperature of pH was set at 25°C. It is preferable that the liquid temperature °C of the stripping solution when performing the stripping treatment is higher than the liquid temperature °C of the developing solution when performing the developing treatment. Specifically, the value obtained by subtracting the liquid temperature °C of the above-mentioned developer from the liquid temperature °C of the above-mentioned stripping liquid (the liquid temperature °C of the above-mentioned stripping liquid-the liquid temperature °C of the above-mentioned developer) is preferably 10 °C or more, and 20 °C The above is better. The upper limit is preferably 100°C or lower, more preferably 80°C or lower. It is preferable that the pH of the stripping solution when performing the stripping treatment is higher than the pH of the developing solution when performing the developing treatment. Specifically, the value obtained by subtracting the pH of the developer from the pH of the stripping solution (pH of the stripping solution−pH of the developer) is preferably 1 or more, more preferably 1.5 or more. The upper limit is preferably 5 or less, more preferably 4 or less.

在利用剝離液剝離光阻圖案之後,實施去除殘留於基板上之剝離液之沖洗處理亦為較佳。沖洗處理中能夠使用水等。 基於剝離液之光阻圖案的剝離及/或沖洗處理之後,可以進行從基板上去除多餘的液體之乾燥處理。 After stripping the photoresist pattern with the stripping solution, it is also preferable to perform a rinse process for removing the stripping solution remaining on the substrate. Water or the like can be used for the rinsing treatment. After the stripping and/or rinsing process of the photoresist pattern by the stripping liquid, a drying process for removing excess liquid from the substrate may be performed.

<去除步驟> 當具有導體圖案之積層體之製造方法具有電鍍處理步驟時,具有導體圖案之積層體之製造方法具有去除步驟。 去除步驟為去除因光阻圖案剝離步驟而露出之導電層而在基板上得到導體圖案之步驟。 另外,在去除步驟中,將藉由電鍍步驟形成之電鍍層用作蝕刻阻劑而進行位於非圖案形成區域(換言之,未被電鍍層保護之區域)之導電層的蝕刻處理。 <Removal procedure> When the method of manufacturing a laminate having a conductor pattern has a plating treatment step, the method of manufacturing a laminate having a conductor pattern has a removal step. The removing step is a step of removing the conductive layer exposed by the stripping step of the photoresist pattern to obtain a conductive pattern on the substrate. In addition, in the removal step, etching treatment of the conductive layer located in the non-pattern formation region (in other words, the region not protected by the plating layer) is performed using the plating layer formed by the plating step as an etching resist.

作為去除導電層的一部分之方法,並不受特別限制,使用公知的蝕刻液為較佳。 作為公知的蝕刻液的一態樣,例如可以舉出氯化鐵溶液、氯化銅溶液、氨鹼溶液、硫酸-過氧化氫混合液及磷酸-過氧化氫混合液等。 The method of removing a part of the conductive layer is not particularly limited, and it is preferable to use a known etching solution. Examples of known etching solutions include ferric chloride solution, copper chloride solution, ammonia-alkali solution, sulfuric acid-hydrogen peroxide mixed solution, phosphoric acid-hydrogen peroxide mixed solution, and the like.

若進行去除步驟,則於表面露出之導電層從基板上被去除,並且具有圖案形狀之電鍍層(導體圖案)殘留,從而可得到具有導體圖案之積層體。When the removal step is performed, the conductive layer exposed on the surface is removed from the substrate, and the plated layer (conductor pattern) having a pattern shape remains, so that a laminate having a conductor pattern can be obtained.

所形成之導體圖案的線寬為8μm以下為較佳,6μm以下為更佳。下限為1μm以上的情況多。The line width of the formed conductor pattern is preferably 8 μm or less, more preferably 6 μm or less. The lower limit is often 1 μm or more.

<其他步驟> 具有導體圖案之積層體之製造方法除了上述各步驟以外,可以具有其他步驟。 作為其他步驟,例如可以舉出國際公開第2019/022089號的[0172]段落中所記載之降低可見光線反射率之步驟及國際公開第2019/022089號的[0172]段落中所記載之在絕緣膜的表面形成新的導電層之步驟。 <Other steps> The method of manufacturing a laminate having a conductor pattern may include other steps in addition to the above-mentioned steps. As other steps, for example, the step of reducing the reflectance of visible light described in paragraph [0172] of International Publication No. 2019/022089 and the step of reducing the reflectance of visible light described in paragraph [0172] of International Publication No. The step of forming a new conductive layer on the surface of the film.

(降低可見光線反射率之步驟) 具有導體圖案之積層體之製造方法可以具有進行降低積層體所具有之導體圖案的一部分或全部的可見光線反射率之處理之步驟。 作為降低可見光線反射率之處理,例如可以舉出氧化處理。當積層體具有包含銅之導體圖案時,對銅進行氧化處理而使其成為氧化銅,並使導體圖案黑化,藉此能夠降低積層體的可見光線反射率。 作為降低可見光線反射率之處理,例如可以舉出日本特開2014-150118號公報的[0017]~[0025]段落以及日本特開2013-206315號公報的[0041]、[0042]、[0048]及[0058]段落,該等內容被編入本說明書中。 (Steps to reduce reflectance of visible light) The manufacturing method of the laminated body which has a conductor pattern may have the process of performing the process which reduces the visible light reflectance of a part or all of the conductor pattern which a laminated body has. As a treatment for lowering the reflectance of visible light, for example, an oxidation treatment is mentioned. When the laminate has a conductor pattern made of copper, the visible light reflectance of the laminate can be reduced by oxidizing the copper to become copper oxide and blackening the conductor pattern. As a treatment for reducing the reflectance of visible light, for example, paragraphs [0017] to [0025] of JP-A-2014-150118 and paragraphs [0041], [0042], and [0048] of JP-A-2013-206315 can be cited. ] and [0058] paragraphs, which are incorporated into this specification.

(形成絕緣膜之步驟、在絕緣膜的表面上形成新的導電層之步驟) 具有導體圖案之積層體之製造方法可以具有在具有導體圖案之積層體的表面形成絕緣膜之步驟和在絕緣膜的表面形成新的導電層(導體圖案等)之步驟。 藉由上述步驟,能夠形成第1電極圖案和絕緣之第2電極圖案。 作為形成絕緣膜之步驟,例如可以舉出形成公知的永久膜之方法。又,亦可以使用具有絕緣性之感光性組成物並藉由光微影形成所期望的圖案的絕緣膜。 作為在絕緣膜的表面形成新的導電層之步驟,例如可以使用具有導電性之感光性組成物並藉由光微影形成所期望的圖案的新的導電層。 (The step of forming an insulating film, the step of forming a new conductive layer on the surface of the insulating film) The method of manufacturing a laminate having a conductive pattern may include a step of forming an insulating film on the surface of the laminate having a conductive pattern and a step of forming a new conductive layer (conductive pattern, etc.) on the surface of the insulating film. Through the above steps, the first electrode pattern and the insulated second electrode pattern can be formed. As a step of forming an insulating film, for example, a method of forming a known permanent film can be mentioned. In addition, an insulating film having a desired pattern can also be formed by photolithography using a photosensitive composition having insulating properties. As a step of forming a new conductive layer on the surface of the insulating film, for example, a photosensitive composition having conductivity can be used to form a new conductive layer of a desired pattern by photolithography.

具有導體圖案之積層體之製造方法中使用在積層體的兩個表面分別具有複數個導電層(導電層等)之基板,利用形成於基材的兩個表面之導電層逐次或同時形成導體圖案亦為較佳。 藉由上述構成,能夠形成在一個基板表面形成有第1導電圖案且在另一個基板表面形成有第2導電圖案之觸控面板用電路配線。又,以卷對卷方式從基板的兩面形成上述構成的觸控面板用電路配線亦為較佳。 In the method of manufacturing a laminate with a conductor pattern, a substrate having a plurality of conductive layers (conductive layers, etc.) is used on both surfaces of the laminate, and a conductor pattern is formed sequentially or simultaneously using the conductive layers formed on both surfaces of the substrate Also better. With the above configuration, it is possible to form circuit wiring for a touch panel in which the first conductive pattern is formed on one substrate surface and the second conductive pattern is formed on the other substrate surface. Moreover, it is also preferable to form the circuit wiring for touch panels of the said structure from both surfaces of a board|substrate in a roll-to-roll system.

[具有導體圖案之積層體的用途] 藉由上述製造方法製造之具有導體圖案之積層體例如用於半導體封裝、印刷基板及中介層(interposer)再配線層的製造工藝膜(process film)為較佳。 作為具備藉由上述製造方法製造之具有導體圖案之積層體之裝置,例如可以舉出輸入裝置,觸控面板為較佳,靜電電容型觸控面板為更佳。又,上述輸入裝置能夠適用於有機EL顯示裝置及液晶顯示裝置等顯示裝置。 [實施例] [Applications of laminates having conductor patterns] The laminated body having a conductor pattern manufactured by the above-mentioned manufacturing method is preferably used for a semiconductor package, a printed circuit board, and a process film of an interposer rewiring layer, for example. As a device provided with a layered body having a conductive pattern manufactured by the above-mentioned manufacturing method, for example, an input device is mentioned, and a touch panel is preferable, and a capacitive type touch panel is more preferable. In addition, the input device described above can be applied to display devices such as organic EL display devices and liquid crystal display devices. [Example]

以下,根據實施例對本發明進行進一步詳細的說明。以下實施例所示之材料、使用量、比例、處理內容、處理程序等只要不脫離本發明的趣旨,則能夠適當進行變更。因此,本發明的範圍不應藉由以下所示之實施例進行限定性解釋。Hereinafter, the present invention will be described in further detail based on examples. Materials, usage amounts, ratios, processing contents, processing procedures, etc. shown in the following examples can be appropriately changed unless departing from the spirit of the present invention. Therefore, the scope of the present invention should not be limitedly interpreted by the Examples shown below.

[聚合物的合成] 〔聚合物A1-1的合成〕 將丙二醇單甲醚9.7g及丙二醇單甲醚乙酸酯9.7g裝入燒瓶中,並在氮氣流下加熱至90℃。向該液體中耗時2小時滴加了將苯乙烯26.9g、甲基丙烯酸甲酯6.7g、甲基丙烯酸11.9g、甲基丙烯酸三級丁酯6.2g及聚合起始劑V-601(FUJIFILM Wako Pure Chemical Corporation製造)1.7g溶解於丙二醇單甲醚5g及丙二醇單甲醚乙酸酯5g而成之溶液和將聚合起始劑V-601(FUJIFILM Wako Pure Chemical Corporation製造)1.7g溶解於丙二醇單甲醚9.7g及丙二醇單甲醚乙酸酯9.7g而成之溶液。滴加結束後,每1小時添加了0.6g的V-601共3次。其後,使其進一步反應了3小時。 接著,用丙二醇單甲醚乙酸酯稀釋所得到之反應液,得到了固體成分濃度30%的聚合物A1-1的溶液。GPC中的標準聚苯乙烯換算的重量平均分子量為23000,分散度為2.3,聚合物的酸值為150mgKOH/g。使用氣相層析而測量之殘餘單體的量在任一單體中相對於聚合物固體成分均未達0.1質量%。 [Synthesis of Polymer] [Synthesis of Polymer A1-1] 9.7 g of propylene glycol monomethyl ether and 9.7 g of propylene glycol monomethyl ether acetate were put into a flask, and it heated to 90 degreeC under nitrogen stream. To this liquid, 26.9 g of styrene, 6.7 g of methyl methacrylate, 11.9 g of methacrylic acid, 6.2 g of tertiary butyl methacrylate, and polymerization initiator V-601 (FUJIFILM A solution prepared by dissolving 1.7 g of propylene glycol monomethyl ether and 5 g of propylene glycol monomethyl ether acetate and 1.7 g of polymerization initiator V-601 (manufactured by FUJIFILM Wako Pure Chemical Corporation) dissolved in propylene glycol A solution of 9.7 g of monomethyl ether and 9.7 g of propylene glycol monomethyl ether acetate. After the dropwise addition was completed, 0.6 g of V-601 was added three times every hour. Thereafter, it was further reacted for 3 hours. Next, the obtained reaction liquid was diluted with propylene glycol monomethyl ether acetate to obtain a solution of polymer A1-1 having a solid content concentration of 30%. The weight average molecular weight in terms of standard polystyrene in GPC was 23,000, the degree of dispersion was 2.3, and the acid value of the polymer was 150 mgKOH/g. The amount of residual monomers measured by gas chromatography did not reach 0.1% by mass with respect to the polymer solid content in any of the monomers.

〔聚合物A1-2~A1-5、A1-8、A1-9、A2-1及A2-2的合成〕 使用與聚合物A1-1相同的方法合成了聚合物A1-2~A1-5、A1-8、A1-9、A2-1及A2-2。使用氣相層析而測量之殘餘單體的量在任一單體中相對於聚合物固體成分均未達0.1質量%。另外,對於聚合物A1-2~A1-5、A1-8、A1-9、A2-1及A2-2,亦作為固體成分濃度30%的聚合物溶液而得到。 [Synthesis of polymers A1-2 to A1-5, A1-8, A1-9, A2-1 and A2-2] Polymers A1-2 to A1-5, A1-8, A1-9, A2-1, and A2-2 were synthesized by the same method as that of polymer A1-1. The amount of residual monomers measured by gas chromatography did not reach 0.1% by mass with respect to the polymer solid content in any of the monomers. In addition, polymers A1-2 to A1-5, A1-8, A1-9, A2-1, and A2-2 were also obtained as a polymer solution having a solid content concentration of 30%.

〔聚合物A1-6的合成〕 將丙二醇單甲醚38.6g裝入到燒瓶中,並在氮氣流下加熱至90℃。向該液體中耗時3小時滴加了將苯乙烯53.8g、甲基丙烯酸三級丁酯6.1g、甲基丙烯酸38.0g、聚合起始劑V-601(FUJIFILM Wako Pure Chemical Corporation製造)9.2g溶解於丙二醇單甲醚29.8g而成之溶液。滴加結束後,每1小時添加了0.8g的V-601共3次。其後,使其進一步反應了3小時。然後,用丙二醇單甲醚乙酸酯54.5g、丙二醇單甲醚79.0g進行了稀釋。在空氣氣流下,將反應液升溫至100℃,並添加了溴化四乙銨0.59g、對甲氧基苯酚0.11g。向其中耗時20分鐘滴加了甲基丙烯酸縮水甘油酯(NOF CORPORATION製造之BLEMMER G)24.4g。使其在100℃下反應7小時,其後,用丙二醇單甲醚乙酸酯進行稀釋,得到了固體成分濃度30%的聚合物A1-6的溶液。使用氣相層析而測量之殘餘單體的量在任一單體中相對於聚合物固體成分均未達0.1質量%。 [Synthesis of Polymer A1-6] 38.6 g of propylene glycol monomethyl ether was put into the flask, and it heated to 90 degreeC under nitrogen flow. To this liquid, 53.8 g of styrene, 6.1 g of tert-butyl methacrylate, 38.0 g of methacrylic acid, and 9.2 g of polymerization initiator V-601 (manufactured by FUJIFILM Wako Pure Chemical Corporation) were added dropwise over 3 hours. A solution obtained by dissolving 29.8 g of propylene glycol monomethyl ether. After the dropwise addition was completed, 0.8 g of V-601 was added three times every hour. Thereafter, it was further reacted for 3 hours. Thereafter, it was diluted with 54.5 g of propylene glycol monomethyl ether acetate and 79.0 g of propylene glycol monomethyl ether. Under air flow, the temperature of the reaction liquid was raised to 100° C., and 0.59 g of tetraethylammonium bromide and 0.11 g of p-methoxyphenol were added thereto. 24.4 g of glycidyl methacrylate (BLEMMER G manufactured by NOF CORPORATION) was added dropwise thereto over 20 minutes. It was made to react at 100 degreeC for 7 hours, after that, it diluted with propylene glycol monomethyl ether acetate, and obtained the solution of polymer A1-6 with a solid content concentration of 30%. The amount of residual monomers measured by gas chromatography did not reach 0.1% by mass with respect to the polymer solid content in any of the monomers.

〔聚合物A1-7、聚合物A2-3的合成〕 使用與聚合物A1-6相同的方法合成了聚合物A1-7及聚合物A2-3。使用氣相層析而測量之殘餘單體的量在任一單體中相對於聚合物固體成分均未達0.1質量%。另外,對於聚合物A1-7及聚合物A2-3,亦作為固體成分濃度30%的聚合物溶液而得到。 [Synthesis of Polymer A1-7 and Polymer A2-3] Polymer A1-7 and polymer A2-3 were synthesized by the same method as polymer A1-6. The amount of residual monomers measured by gas chromatography did not reach 0.1% by mass with respect to the polymer solid content in any of the monomers. In addition, polymer A1-7 and polymer A2-3 were also obtained as a polymer solution having a solid content concentration of 30%.

[化學式18]

Figure 02_image035
[chemical formula 18]
Figure 02_image035

[化學式19]

Figure 02_image037
[chemical formula 19]
Figure 02_image037

以下示出各聚合物的重量平均分子量、分散度及酸值。 酸值1表示酸分解性基X藉由酸的作用進行酸分解之前的狀態下的聚合物的酸值(mgKOH/g),且表示藉由已敘述的方法測量之值。 酸值2表示來自於酸分解性基X藉由酸的作用全部分解時由上述酸分解性基X生成之酸基之酸值(mgKOH/g),且表示藉由已敘述的方法測量之值。 The weight average molecular weight, degree of dispersion, and acid value of each polymer are shown below. The acid value 1 represents the acid value (mgKOH/g) of the polymer in the state before the acid-decomposable group X is acid-decomposed by the action of an acid, and represents a value measured by the method already described. Acid value 2 represents the acid value (mgKOH/g) derived from the acid group generated from the above-mentioned acid-decomposable group X when the acid-decomposable group X is completely decomposed by the action of acid, and represents the value measured by the method described .

[表1] 聚合物 重量平均 分子量 分散度 酸值1 (mgKOH/g) 酸值2 (mgKOH/g) (來自於藉由酸分解性基X的分解而生成之酸基之酸值) 酸值1與酸值2的合計值 (mgKOH/g) A1-1 23000 2.3 150 47 197 A1-2 27000 2.8 130 97 227 A1-3 40000 2.5 98 126 224 A1-4 46000 2.6 137 45 182 A1-5 12000 2.1 150 64 214 A1-6 24000 2.8 101 20 121 A1-7 24000 2.8 124 98 222 A1-8 23000 2.3 163 66 229 A1-9 23000 2.3 163 75 262 A2-1 22000 2.1 150 - - A2-2 22000 2.1 190 - - A2-3 18000 2.6 124 - - [Table 1] polymer Weight average molecular weight Dispersion Acid value1 (mgKOH/g) Acid value 2 (mgKOH/g) (Acid value derived from the acid group generated by the decomposition of the acid decomposable group X) Total value of acid value 1 and acid value 2 (mgKOH/g) A1-1 23000 2.3 150 47 197 A1-2 27000 2.8 130 97 227 A1-3 40000 2.5 98 126 224 A1-4 46000 2.6 137 45 182 A1-5 12000 2.1 150 64 214 A1-6 24000 2.8 101 20 121 A1-7 24000 2.8 124 98 222 A1-8 23000 2.3 163 66 229 A1-9 23000 2.3 163 75 262 A2-1 22000 2.1 150 - - A2-2 22000 2.1 190 - - A2-3 18000 2.6 124 - -

[實施例及比較例的感光性組成物] 〔感光性組成物的製備〕 使用感光性組成物形成了轉印膜所具有之感光性組成物層。 感光性組成物的製備中所使用之成分如下,將以下所示之各成分以如後段所示的表2那樣的配方混合而得到了實施例或比較例中使用之各感光性組成物。 [Photosensitive Compositions of Examples and Comparative Examples] [Preparation of photosensitive composition] The photosensitive composition layer which the transfer film has was formed using the photosensitive composition. The components used in the preparation of the photosensitive composition are as follows, and the respective components shown below were mixed in the formulation shown in Table 2 shown in the following paragraph to obtain the respective photosensitive compositions used in Examples or Comparative Examples.

〔感光性組成物的各成分〕 以下示出感光性組成物的製備中所使用之各種成分。 [Components of photosensitive composition] Various components used for preparation of the photosensitive composition are shown below.

<聚合物A1/A2> 使用了上段部的合成例欄中所合成之聚合物。另外,當進行摻合時,以聚合物溶液的形態投入到組成物中。 <Polymer A1/A2> The polymer synthesized in the synthesis example column of the above paragraph was used. In addition, when blending, it is added to the composition in the form of a polymer solution.

<光酸產生劑D> 以下示出所使用之光酸產生劑D。 <Photoacid generator D> The photoacid generator D used is shown below.

[化學式20]

Figure 02_image039
[chemical formula 20]
Figure 02_image039

<化合物E> 以下示出所使用之化合物E。 E-1:聚(甲基丙烯酸三級丁酯) E-2:下述化合物(藉由日本特開平8-123031號公報中所記載之方法進行了合成。) <Compound E> Compound E used is shown below. E-1: Poly(tertiary butyl methacrylate) E-2: The following compound (synthesized by the method described in JP-A-8-123031.)

[化學式21]

Figure 02_image041
[chemical formula 21]
Figure 02_image041

<聚合性化合物B> 以下示出所使用之聚合性化合物B。 ·SR454:乙氧基化(3)三羥甲基丙烷三甲基丙烯酸酯,TOMOE Engineering Co.,Ltd.製造 ·BPE-500:乙氧基化雙酚A二甲基丙烯酸酯,Shin-Nakamura Chemical Co.,Ltd.製造 ·BPE-100:乙氧基化雙酚A二甲基丙烯酸酯,Shin-Nakamura Chemical Co.,Ltd.製造 ·M-270:ARONIX M-270,聚丙二醇二丙烯酸酯(n≈12),TOAGOSEI CO.,LTD.製造 ·4G:NK Ester 4G,聚乙二醇#200二甲基丙烯酸酯,Shin-Nakamura Chemical Co.,Ltd.製造 <Polymerizable compound B> The polymerizable compound B used is shown below. SR454: Ethoxylated (3) trimethylolpropane trimethacrylate, manufactured by TOMOE Engineering Co., Ltd. ・BPE-500: Ethoxylated bisphenol A dimethacrylate, manufactured by Shin-Nakamura Chemical Co., Ltd. ・BPE-100: Ethoxylated bisphenol A dimethacrylate, manufactured by Shin-Nakamura Chemical Co., Ltd. ・M-270: ARONIX M-270, polypropylene glycol diacrylate (n≈12), manufactured by TOAGOSEI CO.,LTD. 4G: NK Ester 4G, polyethylene glycol #200 dimethacrylate, manufactured by Shin-Nakamura Chemical Co., Ltd.

<光聚合起始劑C> 以下示出所使用之聚合性化合物C。 ·2-(鄰氯苯基)-4,5-二苯基咪唑二聚物 <Photopolymerization initiator C> The polymerizable compound C used is shown below. ·2-(o-chlorophenyl)-4,5-diphenylimidazole dimer

<其他摻合物> 以下示出所使用之其他摻合物。 (增感劑) ·4,4′-雙(二乙基胺基)二苯甲酮 <Other blends> Other blends used are shown below. (sensitizer) 4,4′-bis(diethylamino)benzophenone

(聚合抑制劑) ·啡噻𠯤 (polymerization inhibitor) · Phenothiophene 𠯤

(抗氧化劑) ·菲尼酮 (Antioxidants) ·Phenidone

(顯色劑) ·無色結晶紫:Tokyo Chemical Industry Co.,Ltd.製造 (Reagent) · Colorless crystal violet: manufactured by Tokyo Chemical Industry Co., Ltd.

(防銹劑) ·CBT-1:羧基苯并三唑,JOHOKU CHEMICAL CO.,LTD.製造 (Rust inhibitor) ・CBT-1: carboxybenzotriazole, manufactured by JOHOKU CHEMICAL CO.,LTD.

(界面活性劑) ·F552:MEGAFACE F-552,DIC Corporation製造 (surfactant) ・F552: MEGAFACE F-552, manufactured by DIC Corporation

(溶劑) ·MMPGAc:1-甲氧基-2-丙基乙酸酯 ·MEK:甲基乙基酮 (solvent) MMPGAc: 1-methoxy-2-propyl acetate MEK: methyl ethyl ketone

[轉印膜的製作及評價-1] 〔中間層形成用組成物〕 使用中間層形成用組成物形成了轉印膜所具有之中間層。 中間層形成用組成物的製備中所使用中成分如下,將以下所示之各成分以如後段所示之表2那樣的配方混合而得到了實施例或比較例中使用之各中間層形成用組成物。 [Production and Evaluation of Transfer Film-1] 〔Composition for intermediate layer formation〕 The intermediate layer which the transfer film has was formed using the composition for intermediate layer formation. The components used in the preparation of the composition for forming an intermediate layer are as follows, and each component for forming an intermediate layer used in an example or a comparative example was obtained by mixing the components shown below in the formulation shown in Table 2 in the latter paragraph. Composition.

〔中間層形成用組成物的各成分〕 <樹脂> ·PVA:聚乙烯醇,產品名“KURARAY POVAL PVA-205”,Kuraray Co.,Ltd.製造 ·PVP:聚乙烯吡咯啶酮,產品名“聚乙烯吡咯啶酮K-30”,NIPPON SHOKUBAI CO.,LTD.製造 ·HPMC:羥丙基甲基纖維素,產品名“METOLOSE 60SH-03”,Shin-Etsu Chemical Co.,Ltd.製造 [Components of the intermediate layer forming composition] <Resin> ・PVA: Polyvinyl alcohol, product name "KURARAY POVAL PVA-205", manufactured by Kuraray Co., Ltd. ・PVP: Polyvinylpyrrolidone, product name "Polyvinylpyrrolidone K-30", manufactured by NIPPON SHOKUBAI CO.,LTD. ・HPMC: hydroxypropyl methylcellulose, product name "METOLOSE 60SH-03", manufactured by Shin-Etsu Chemical Co., Ltd.

<界面活性劑> ·F444:MEGAFACE F444,氟系界面活性劑,DIC Corporation製造 <Surfactant> ・F444: MEGAFACE F444, fluorine-based surfactant, manufactured by DIC Corporation

<溶劑> ·水 ·甲醇 <Solvent> ·water · Methanol

〔轉印膜的製作及評價〕 使用上述感光性組成物及中間層形成用組成物,依據表2所示之構成按以下的程序製作出轉印膜。 〔Production and evaluation of transfer film〕 Using the photosensitive composition and the composition for intermediate layer formation mentioned above, the transfer film was produced according to the following procedure according to the structure shown in Table 2.

<轉印膜的製作> 製作出由偽支撐體、中間層及感光性組成物層構成之各轉印膜。具體如下。 首先,使用棒塗機在偽支撐體(厚度16μm的聚對酞酸乙二酯薄膜(LUMIRROR 16KS40,TORAY INDUSTRIES, INC.製造))上以乾燥後的厚度成為1.0μm之方式塗佈中間層形成用組成物,使用烘箱使其在90℃下而形成了中間層。 進一步,使用棒塗機在中間層上以乾燥後的厚度成為3.0μm之方式塗佈感光性組成物,使用烘箱使其在80℃下乾燥而形成了感光性組成物層(負型感光性組成物層)。 在所得到之感光性組成物層上壓接厚度16μm的聚對酞酸乙二酯(16KS40,TORAY INDUSTRIES, INC.製造)作為保護膜,製作出各實施例或比較例中使用之轉印膜。 <Preparation of transfer film> Each transfer film composed of a dummy support, an intermediate layer and a photosensitive composition layer was produced. details as follows. First, an intermediate layer is formed by applying a bar coater on a dummy support (polyethylene terephthalate film with a thickness of 16 μm (LUMIRROR 16KS40, manufactured by TORAY INDUSTRIES, INC.)) so that the thickness after drying becomes 1.0 μm. Using the composition, an intermediate layer was formed at 90° C. using an oven. Furthermore, a photosensitive composition was coated on the intermediate layer with a bar coater so that the thickness after drying became 3.0 μm, and dried at 80° C. using an oven to form a photosensitive composition layer (negative photosensitive composition layer). On the obtained photosensitive composition layer, polyethylene terephthalate (16KS40, manufactured by TORAY INDUSTRIES, INC.) with a thickness of 16 μm was crimped as a protective film, and the transfer film used in each example or comparative example was produced. .

<試驗程序(積層體製作、第1圖案形成)及各種評價> 使用了藉由濺射法在厚度188μm的PET薄膜(聚對酞酸乙二酯薄膜)上製作出厚度500nm的銅層之附有銅層之PET基板。 將所製作之轉印膜切割為50cm見方,剝下保護膜,以感光性組成物層與PET基板表面的銅層接觸之方式,在輥溫度90℃、線壓0.8MPa、線速度3.0m/min.的層壓條件下層壓於附有銅層之PET基板而得到了積層體。 在該時點,積層體具有“PET薄膜-銅層-感光性組成物層-中間層-偽支撐體”的構成。 將直至目前為止設為積層體製作階段。 接合,從所得到之積層體剝離偽支撐體,使中間層於積層體的表面露出。使線(μm)/間隔(μm)為1/1的比率且以1μm步長具有1~10μm的線的線寬的光罩與積層體中的於表面露出之中間層密接。使用超高壓水銀燈曝光機(主波長:365nm)照射了光。曝光量設為顯影後得到之光阻圖案再現5μm的線與間隔形狀之曝光量。 其後,將28℃的1.0%碳酸鈉水溶液(pH=11.4)用作顯影液進行了顯影。具體而言,顯影中進行30秒鐘噴淋處理而進行氣刀(AirKnife)處理從而甩掉顯影液之後,用純水進行30秒鐘噴淋處理而進一步進行了氣刀處理。 藉此,得到了具有線寬度:間隔寬度=1:1的線與間隔形狀的光阻圖案之積層體。 將直至目前為止設為第1圖案形成階段。 在該時點,積層體具有“PET薄膜-銅層-光阻圖案”的構成。 <Test procedures (laminate production, 1st pattern formation) and various evaluations> A PET substrate with a copper layer in which a copper layer with a thickness of 500 nm was formed on a PET film (polyethylene terephthalate film) with a thickness of 188 μm by sputtering was used. Cut the produced transfer film into 50cm squares, peel off the protective film, and make the photosensitive composition layer contact with the copper layer on the surface of the PET substrate, at a roller temperature of 90°C, a line pressure of 0.8MPa, and a line speed of 3.0m/ The laminated body was obtained by laminating on a PET substrate with a copper layer under lamination conditions of min. At this point, the laminate has a configuration of "PET film-copper layer-photosensitive composition layer-intermediate layer-dummy support". Let the present be the stage of producing laminates. For bonding, the dummy support is peeled off from the obtained laminate to expose the intermediate layer on the surface of the laminate. The ratio of line (μm)/space (μm) is 1/1 and a photomask having a line width of 1 to 10 μm in steps of 1 μm is brought into close contact with the intermediate layer exposed on the surface of the laminate. Light was irradiated using an ultra-high pressure mercury lamp exposure machine (main wavelength: 365 nm). The exposure amount was set as the exposure amount for reproducing a 5 μm line-and-space shape in the resist pattern obtained after development. Then, image development was performed using 28 degreeC 1.0% sodium carbonate aqueous solution (pH=11.4) as a developing solution. Specifically, after performing shower processing for 30 seconds during image development and performing air knife (Air Knife) processing to shake off the developing solution, shower processing was performed with pure water for 30 seconds and further air knife processing was performed. Thereby, a laminate having a resist pattern in a line and space shape with line width:space width=1:1 was obtained. Let the up to now be the first pattern formation stage. At this point, the laminate has a configuration of "PET film-copper layer-photoresist pattern".

(光阻解析性(最小解析線寬)及光阻圖案形狀的評價) 將能夠在不產生圖案崩塌等的情況下形成之最小的線寬設為最小解析線寬。 又,利用掃描型電子顯微鏡(SEM)觀察光阻圖案的剖面形狀,評價了最小解析線寬下有無捲邊。 A:無捲邊的圖案形狀 B:稍微呈捲邊形狀 C:捲邊形狀 將結果示於表2。 (Evaluation of resist resolution (minimum resolution line width) and resist pattern shape) The smallest line width that can be formed without causing pattern collapse or the like is set as the minimum analysis line width. Also, the cross-sectional shape of the resist pattern was observed with a scanning electron microscope (SEM), and the presence or absence of curling at the minimum analytical line width was evaluated. A: Pattern shape without curling B: Slightly curled C: curled shape The results are shown in Table 2.

(基於電鍍之導體圖案形成及光阻圖案剝離性以及導體圖案形成(銅圖案)形狀評價) 將上述積層體(藉由實施至第1圖案形成階段而得到之形成有光阻圖案之基板(具有光阻圖案之積層體))放入硫酸銅電鍍液(硫酸銅75g/L,硫酸190g/L,氯離子50質量ppm,Meltex Inc.製造,“Copper Glyme PCM”,5mL/L)中,在1A/dm 2的條件下進行了銅電鍍處理。 水洗並乾燥銅電鍍處理後的上述積層體之後,利用120℃的烘箱加熱了2分鐘。另外,在包含D1-1、D2-1、D4-1、D5-1、D6-1作為光酸產生劑之組成物的評價中,在120℃的烘箱中加熱2分鐘之前,使用高壓水銀燈(主波長254nm、313nm)以50mJ/cm 2的曝光量進行了全面曝光。該等光酸產生劑在365nm處不具有吸收,因此在第1圖案形成階段不產生酸,而在該全面曝光時產生酸。 藉由浸漬於50℃的1質量%氫氧化鉀水溶液(pH=13.5)而剝離了光阻圖案。改變剝離時間而進行剝離,並以如下方式評價了在5μm的線與間隔圖案中阻劑被剝離之時間。時間愈短,則剝離性愈良好。將結果示於表2。 A:未達30秒 B:30秒以上且未達60秒 C:60秒以上且未達120秒 D:120秒以上 (Evaluation of Conductor Pattern Formation and Resist Pattern Removal by Electroplating and Conductor Pattern Formation (Copper Pattern) Shape) The above-mentioned laminate (a substrate with a resist pattern (with The layered body of the photoresist pattern)) was placed in a copper sulfate plating solution (copper sulfate 75g/L, sulfuric acid 190g/L, chloride ion 50 mass ppm, manufactured by Meltex Inc., "Copper Glyme PCM", 5mL/L), in Under the condition of 1A/dm 2 , the copper electroplating treatment was carried out. After washing with water and drying the said laminated body after copper electroplating process, it heated for 2 minutes in the oven of 120 degreeC. In addition, in the evaluation of compositions containing D1-1, D2-1, D4-1, D5-1, and D6-1 as photoacid generators, a high-pressure mercury lamp ( Dominant wavelengths 254nm, 313nm) were fully exposed at an exposure amount of 50mJ/cm 2 . These photoacid generators do not have absorption at 365 nm, and therefore do not generate acid in the first patterning stage, but generate acid in the overall exposure. The photoresist pattern was peeled off by immersing in 50 degreeC 1 mass % potassium hydroxide aqueous solution (pH=13.5). The peeling was performed while changing the peeling time, and the time for the resist to be peeled in a 5 μm line-and-space pattern was evaluated as follows. The shorter the time, the better the detachability. The results are shown in Table 2. A: Less than 30 seconds B: More than 30 seconds and less than 60 seconds C: More than 60 seconds and less than 120 seconds D: More than 120 seconds

其後,用包含0.1質量%硫酸及0.1質量%過氧化氫之水溶液去除積層體所具有之銅層(晶種層),得到了導體圖案(銅圖案)。利用掃描型電子顯微鏡(SEM)觀察導體圖案的剖面形狀,並評價了在5μm的圖案中導體圖案的底部有無咬邊(under cut)。將結果示於表2。 A:無咬邊的圖案形狀 B:稍微呈咬邊形狀 C:咬邊形狀 Then, the copper layer (seed layer) which the laminated body had was removed with the aqueous solution containing 0.1 mass % of sulfuric acid and 0.1 mass % of hydrogen peroxide, and the conductor pattern (copper pattern) was obtained. The cross-sectional shape of the conductor pattern was observed with a scanning electron microscope (SEM), and the presence or absence of undercut at the bottom of the conductor pattern in the 5 μm pattern was evaluated. The results are shown in Table 2. A: Pattern shape without undercut B: Slightly undercut shape C: undercut shape

(基於蝕刻之導體圖案形成及導體圖案直線性(LWR)的評價) 直至第1圖案形成階段為止同樣地實施而得到了形成有光阻圖案之基板(具有光阻圖案之積層體)。 將上述具有光阻圖案之積層體利用銅蝕刻液(Cu-02:Kanto Chemical Co.,Inc.製造)在23℃下蝕刻30秒鐘,並利用120℃的烘箱加熱2分鐘之後,使用單乙醇胺水溶液系剝離液(pH=13.1)在40℃下剝離光阻圖案,藉此得到了銅配線被圖案化之基板(具有導體圖案之積層體)。 另外,在包含D1-1、D2-1、D4-1、D5-1、D6-1作為光酸產生劑之組成物的評價中,在120℃的烘箱中加熱2分鐘之前,使用高壓水銀燈(主波長254nm、313nm)以50mJ/cm 2的曝光量進行了全面曝光。該等光酸產生劑在365nm處不具有吸收,因此在第1圖案形成階段不產生酸,而在該全面曝光時產生酸。 關於從5μm的線與間隔的銅配線圖案隨機選擇之部位的線寬,在100個部位進行了測量。求出所得到之線寬的標準偏差(單位:nm),將標準偏差的值定義為LWR(Line Width Roughness:線寬粗糙度)。 依據下述區分來分類所得到之LWR的值,並評價了導體圖案的直線性。 LWR愈小,則線寬變動愈小,因此為較佳。將結果示於表2。 A:LWR未達150nm B:LWR為150nm以上且未達200nm C:LWR為200nm以上且未達300nm D:LWR為300nm以上 (Conductor Pattern Formation by Etching and Conductor Pattern Linearity (LWR) Evaluation) The same procedure was carried out up to the first pattern formation stage to obtain a substrate on which a resist pattern was formed (a laminate having a resist pattern). The laminated body with the photoresist pattern above was etched with a copper etchant (Cu-02: manufactured by Kanto Chemical Co., Inc.) at 23°C for 30 seconds, heated in an oven at 120°C for 2 minutes, and then monoethanolamine was used to An aqueous solution-based stripping solution (pH=13.1) was used to strip the photoresist pattern at 40°C to obtain a substrate on which copper wiring was patterned (a laminate with a conductor pattern). In addition, in the evaluation of compositions containing D1-1, D2-1, D4-1, D5-1, and D6-1 as photoacid generators, a high-pressure mercury lamp ( Dominant wavelengths 254nm, 313nm) were fully exposed at an exposure amount of 50mJ/cm 2 . These photoacid generators do not have absorption at 365 nm, and therefore do not generate acid in the first patterning stage, but generate acid in the overall exposure. The measurement was performed at 100 locations about the line widths at locations randomly selected from the 5 μm line-and-space copper wiring pattern. The standard deviation (unit: nm) of the obtained line width was obtained, and the value of the standard deviation was defined as LWR (Line Width Roughness: line width roughness). The obtained LWR values were classified according to the following classification, and the linearity of the conductor pattern was evaluated. The smaller the LWR is, the smaller the variation in the line width is, which is preferable. The results are shown in Table 2. A: LWR is less than 150nm B: LWR is more than 150nm and less than 200nm C: LWR is more than 200nm and less than 300nm D: LWR is more than 300nm

<經時評價> 使所製作之轉印膜在溫度50℃/濕度50%的條件下經過10天。接著,使用該轉印膜實施了在上段部的<試驗程序(積層體製作、第1圖案形成)及各種評價>中說明之各種評價試驗(光阻解析性(最小解析線寬)及光阻圖案形狀的評價;基於電鍍之導體圖案形成及光阻圖案剝離性以及導體圖案形狀評價;基於蝕刻之導體圖案形成及導體圖案直線性(LWR)的評價)。將結果示於表2。 <Evaluation over time> The produced transfer film was allowed to pass for 10 days under the conditions of temperature 50° C./humidity 50%. Next, various evaluation tests (resist resolution (minimum resolution line width) and resist Evaluation of pattern shape; conductor pattern formation based on electroplating and photoresist pattern peelability and conductor pattern shape evaluation; conductor pattern formation based on etching and conductor pattern linearity (LWR) evaluation). The results are shown in Table 2.

以下示出表2。Table 2 is shown below.

[表2] 表2 組成(摻合量:質量份) 實施例 1 2 3 4 5 6 7 8 9 感光性 組成物 聚合物A1/A2 (30質量%溶液) A1-1 25.2 25.2 25.2 25.2 25.2 25.2 25.2       A1-2                            A1-3                            A1-4                            A1-5                            A1-6                            A1-7                            A1-8                            A1-9                            A2-1                            A2-2                      23.2    A2-3                         23.2 光酸產生劑D D1-1 0.2                         D2-1    0.2                      D3-1       0.2             0.2 0.2 D4-1          0.2                D5-1             0.2             D6-1                0.2          D7-1                   0.2       DX(比較用)                            化合物E E-1                      2    E-2                         2 聚合性化合物B SR454 2.8 2.8 2.8 2.8 2.8 2.8 2.8 2.8 2.8 BPE500 2.8 2.8 2.8 2.8 2.8 2.8 2.8 2.8 2.8 BPE100                            M270 0.6 0.6 0.6 0.6 0.6 0.6 0.6 0.6 0.6 4G                            光聚合起始劑C 2-(鄰氯苯基)-4,5-二苯基咪唑二聚物 1 1 1 1 1 1 1 1 1 增感劑 4,4’-雙(二乙基胺基)二苯甲酮 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 聚合抑制劑 啡噻𠯤 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 抗氧化劑 菲尼酮 0.002 0.002 0.002 0.002 0.002 0.002 0.002 0.002 0.002 色素 無色結晶紫 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 防銹劑 CBT-1 0.02 0.02 0.02 0.02 0.02 0.02 0.02 0.02 0.02 界面活性劑 F552 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 溶劑 MMPGAc 37.3 37.3 37.3 37.3 37.3 37.3 37.3 37.3 37.3 MEK 30 30 30 30 30 30 30 30 30 中間層 形成用 組成物 樹脂 PVA 67.5 67.5 67.5 67.5 67.5 67.5 67.5 67.5 67.5 PVP 31.5 31.5 31.5 31.5 31.5 31.5 31.5 31.5 31.5 HPMC 1 1 1 1 1 1 1 1 1 界面活性劑 F444 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 溶劑 甲醇 630 630 630 630 630 630 630 630 630 270 270 270 270 270 270 270 270 270 最小解析線寬(μm) 1 2 1 2 2 2 2 1 1 最小解析線寬(μm) 經時後 1 2 1 2 2 2 2 1 1 光阻圖案形狀 A A A A A A A A A 光阻圖案形狀 經時後 A A A A A A A A A 剝離性 A A A A A A A B B 導體圖案形狀 A A A A A A A A A 導體圖案形狀 經時後 A A A A A A A A A 導體圖案LWR(nm) A A A A A A A A A 導體圖案LWR(nm) 經時後 A A A A A A A A A [Table 2] Table 2 Composition (blending amount: parts by mass) Example 1 2 3 4 5 6 7 8 9 photosensitive composition Polymer A1/A2 (30% by mass solution) A1-1 25.2 25.2 25.2 25.2 25.2 25.2 25.2 A1-2 A1-3 A1-4 A1-5 A1-6 A1-7 A1-8 A1-9 A2-1 A2-2 23.2 A2-3 23.2 photoacid generator D D1-1 0.2 D2-1 0.2 D3-1 0.2 0.2 0.2 D4-1 0.2 D5-1 0.2 D6-1 0.2 D7-1 0.2 DX (for comparison) Compound E E-1 2 E-2 2 polymeric compound B SR454 2.8 2.8 2.8 2.8 2.8 2.8 2.8 2.8 2.8 BPE500 2.8 2.8 2.8 2.8 2.8 2.8 2.8 2.8 2.8 BPE100 M270 0.6 0.6 0.6 0.6 0.6 0.6 0.6 0.6 0.6 4G Photopolymerization initiator C 2-(o-chlorophenyl)-4,5-diphenylimidazole dimer 1 1 1 1 1 1 1 1 1 Sensitizer 4,4'-Bis(diethylamino)benzophenone 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 polymerization inhibitor phenothiophene 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 Antioxidants Phenidone 0.002 0.002 0.002 0.002 0.002 0.002 0.002 0.002 0.002 pigment colorless crystal violet 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 Rust inhibitor CBT-1 0.02 0.02 0.02 0.02 0.02 0.02 0.02 0.02 0.02 Surfactant F552 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 solvent MMPGAc 37.3 37.3 37.3 37.3 37.3 37.3 37.3 37.3 37.3 MEK 30 30 30 30 30 30 30 30 30 Composition for intermediate layer formation resin PVA 67.5 67.5 67.5 67.5 67.5 67.5 67.5 67.5 67.5 pvp 31.5 31.5 31.5 31.5 31.5 31.5 31.5 31.5 31.5 HPMC 1 1 1 1 1 1 1 1 1 Surfactant F444 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 solvent Methanol 630 630 630 630 630 630 630 630 630 water 270 270 270 270 270 270 270 270 270 Minimum analytical line width (μm) 1 2 1 2 2 2 2 1 1 Minimum analytical line width (μm) after time 1 2 1 2 2 2 2 1 1 Photoresist pattern shape A A A A A A A A A Photoresist pattern shape after time A A A A A A A A A Stripping A A A A A A A B B Conductor pattern shape A A A A A A A A A Conductor pattern shape after time A A A A A A A A A Conductor pattern LWR (nm) A A A A A A A A A Conductor pattern LWR (nm) after time A A A A A A A A A

[表3] 表2(續) 組成(摻合量:質量份) 實施例 比較例 10 11 12 13 14 15 16 17 18 19 1 2 感光性 組成物 聚合物A1/A2 (30質量%溶液) A1-1                         25.2 25.2 25.2    A1-2 25.2                                  A1-3    25.2                               A1-4       25.2                            A1-5          25.2                         A1-6             25.2                      A1-7                25.2                   A1-8                   25.2                A1-9                      25.2             A2-1                                  25.2 A2-2                                     A2-3                                     光酸產生劑D D1-1    0.2 0.2                            D2-1                                     D3-1 0.2       0.2 0.2 0.2 0.2 0.2 0.2 0.2       D4-1                                     D5-1                                     D6-1                                     D7-1                                     DX(比較用)                               0.2    化合物E E-1                                     E-2                                     聚合性化合物B SR454 2.8 2.8 2.8 2.8 2.8 2.8 2.8 2.8       2.8 2.8 BPE500 2.8 2.8 2.8 2.8 2.8 2.8 2.8 2.8    2.8 2.8 2.8 BPE100                         2.8 2.8       M270 0.6 0.6 0.6 0.6 0.6 0.6 0.6 0.6 0.6 0.6 0.6 0.6 4G                         2.8          光聚合起始劑C 2-(鄰氯苯基)-4,5-二苯基咪唑二聚物 1 1 1 1 1 1 1 1 1 1 1 1 增感劑 4,4’-雙(二乙基胺基)二苯甲酮 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 聚合抑制劑 啡噻𠯤 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 抗氧化劑 菲尼酮 0.002 0.002 0.002 0.002 0.002 0.002 0.002 0.002 0.002 0.002 0.002 0.002 色素 無色結晶紫 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 防銹劑 CBT-1 0.02 0.02 0.02 0.02 0.02 0.02 0.02 0.02 0.02 0.02 0.02 0.02 界面活性劑 F552 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 溶劑 MMPGAc 37.3 37.3 37.3 37.3 37.3 37.3 37.3 37.3 37.3 37.3 37.3 37.3 MEK 30 30 30 30 30 30 30 30 30 30 30 30 中間層 形成用 組成物 樹脂 PVA 67.5 67.5 67.5 67.5 67.5 67.5 67.5 67.5 67.5 67.5 67.5 67.5 PVP 31.5 31.5 31.5 31.5 31.5 31.5 31.5 31.5 31.5 31.5 31.5 31.5 HPMC 1 1 1 1 1 1 1 1 1 1 1 1 界面活性劑 F444 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 溶劑 甲醇 630 630 630 630 630 630 630 630 630 630 630 630 270 270 270 270 270 270 270 270 270 270 270 270 最小解析線寬(μm) 1 1 1 1 1 1 2 2 1 1 2 2 最小解析線寬(μm) 經時後 1 1 1 1 1 1 2 2 1 1 3 2 光阻圖案形狀 A A A A A A B B A A B B 光阻圖案形狀 經時後 A A A A A A B B A A C B 剝離性 A A A A A A A A A A B D 導體圖案形狀 A A A A A A A B A A C B 導體圖案形狀 經時後 A A A A A A A B A A C B 導體圖案LWR(nm) A A A A A A A B A A C B 導體圖案LWR(nm) 經時後 A A A A A A A B A A D B [table 3] Table 2 (continued) Composition (blending amount: parts by mass) Example comparative example 10 11 12 13 14 15 16 17 18 19 1 2 photosensitive composition Polymer A1/A2 (30% by mass solution) A1-1 25.2 25.2 25.2 A1-2 25.2 A1-3 25.2 A1-4 25.2 A1-5 25.2 A1-6 25.2 A1-7 25.2 A1-8 25.2 A1-9 25.2 A2-1 25.2 A2-2 A2-3 photoacid generator D D1-1 0.2 0.2 D2-1 D3-1 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 D4-1 D5-1 D6-1 D7-1 DX (for comparison) 0.2 Compound E E-1 E-2 polymeric compound B SR454 2.8 2.8 2.8 2.8 2.8 2.8 2.8 2.8 2.8 2.8 BPE500 2.8 2.8 2.8 2.8 2.8 2.8 2.8 2.8 2.8 2.8 2.8 BPE100 2.8 2.8 M270 0.6 0.6 0.6 0.6 0.6 0.6 0.6 0.6 0.6 0.6 0.6 0.6 4G 2.8 Photopolymerization initiator C 2-(o-chlorophenyl)-4,5-diphenylimidazole dimer 1 1 1 1 1 1 1 1 1 1 1 1 Sensitizer 4,4'-Bis(diethylamino)benzophenone 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 polymerization inhibitor phenothiophene 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 Antioxidants Phenidone 0.002 0.002 0.002 0.002 0.002 0.002 0.002 0.002 0.002 0.002 0.002 0.002 pigment colorless crystal violet 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 Rust inhibitor CBT-1 0.02 0.02 0.02 0.02 0.02 0.02 0.02 0.02 0.02 0.02 0.02 0.02 Surfactant F552 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 solvent MMPGAc 37.3 37.3 37.3 37.3 37.3 37.3 37.3 37.3 37.3 37.3 37.3 37.3 MEK 30 30 30 30 30 30 30 30 30 30 30 30 Composition for intermediate layer formation resin PVA 67.5 67.5 67.5 67.5 67.5 67.5 67.5 67.5 67.5 67.5 67.5 67.5 pvp 31.5 31.5 31.5 31.5 31.5 31.5 31.5 31.5 31.5 31.5 31.5 31.5 HPMC 1 1 1 1 1 1 1 1 1 1 1 1 Surfactant F444 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 solvent Methanol 630 630 630 630 630 630 630 630 630 630 630 630 water 270 270 270 270 270 270 270 270 270 270 270 270 Minimum analytical line width (μm) 1 1 1 1 1 1 2 2 1 1 2 2 Minimum analytical line width (μm) after time 1 1 1 1 1 1 2 2 1 1 3 2 Photoresist pattern shape A A A A A A B B A A B B Photoresist pattern shape after time A A A A A A B B A A C B Stripping A A A A A A A A A A B D. Conductor pattern shape A A A A A A A B A A C B Conductor pattern shape after time A A A A A A A B A A C B Conductor pattern LWR (nm) A A A A A A A B A A C B Conductor pattern LWR (nm) after time A A A A A A A B A A D. B

由表2的結果確認到,依本發明的感光性組成物,能夠形成剝離性優異且即使在保管既定期間之後使用時形狀性亦優異的光阻圖案。 又,由實施例的對比(例如,實施例1~7的對比)確認到,當光酸產生劑D為鋶鹽或肟磺酸鹽時,經時前及經時後的最小解析線寬變得更小。 又,由實施例的對比(例如,實施例4、10~17與實施例8及9的對比)確認到,與第2實施形態的感光性組成物相比,第1實施形態的感光性組成物的剝離性更優異。 又,由實施例的對比(例如,實施例4、10~15與實施例16及17的對比)確認到,當在聚合物A1中來自於羧基之酸值為150mgKOH/g以下時(較佳為來自於羧基之酸值為150mgKOH/g以下時且來自於羧基之酸值與來自於酸分解性基X藉由酸的作用全部分解時由酸分解性基X生成之酸基之酸值的合計值為230mgKOH/g以下時),經時前及經時後的最小解析線寬變得更小,並且經時前及經時後的光阻圖案形狀、經時前及經時後的導體圖案形狀及其LWR性能更優異。 From the results in Table 2, it was confirmed that according to the photosensitive composition of the present invention, a photoresist pattern having excellent releasability and excellent formability can be formed even after storage for a predetermined period of time. Also, from the comparison of the Examples (for example, the comparison of Examples 1 to 7), it has been confirmed that when the photoacid generator D is a columium salt or an oxime sulfonate, the minimum analytical line width before and after the passage of time changes. smaller. Also, from the comparison of the examples (for example, the comparison of Examples 4, 10 to 17 and Examples 8 and 9), it was confirmed that the photosensitive composition of the first embodiment was more effective than the photosensitive composition of the second embodiment. The peelability of the material is more excellent. Also, from the comparison of Examples (for example, the comparison of Examples 4, 10-15 and Examples 16 and 17), it is confirmed that when the acid value derived from the carboxyl group in Polymer A1 is 150 mgKOH/g or less (preferably When the acid value derived from the carboxyl group is 150 mgKOH/g or less and the acid value derived from the carboxyl group and the acid value derived from the acid group generated from the acid decomposable group X when the acid decomposable group X is completely decomposed by the action of an acid When the total value is 230mgKOH/g or less), the minimum analytical line width before and after aging becomes smaller, and the shape of the photoresist pattern before and after aging, and the conductor before and after aging The pattern shape and its LWR performance are more excellent.

[轉印膜的製作-2] 偽支撐體使用了日本特開2000-309650號公報的實施例1中所記載之聚酯薄膜(厚度6.9微米),除此以外,以相同的方式以實施例1~19中所記載之構成製作轉印膜,並對所得到之轉印膜實施了上述評價,其結果,任一評價結果均為與實施例1~19等同的良好的結果。 [Production of transfer film-2] The dummy support was produced in the same manner as in Examples 1 to 19, except that the polyester film (thickness: 6.9 μm) described in Example 1 of JP-A-2000-309650 was used. As a result of carrying out the above-mentioned evaluation on the transfer film and the obtained transfer film, all evaluation results were good results equivalent to Examples 1-19.

10:轉印膜 11:偽支撐體 13:中間層 15:感光性組成物層 17:組成物層 19:保護膜 10: transfer film 11: Pseudo-support 13: middle layer 15: Photosensitive composition layer 17: Composition layer 19: Protective film

圖1係表示轉印膜的構成的一例之概略圖。FIG. 1 is a schematic diagram showing an example of the structure of a transfer film.

10:轉印膜 10: transfer film

11:偽支撐體 11: Pseudo-support

13:中間體 13: Intermediate

15:感光性組成物層 15: Photosensitive composition layer

17:組成物層 17: Composition layer

19:保護膜 19: Protective film

Claims (23)

一種感光性組成物,其包含聚合物A1、聚合性化合物B、光聚合起始劑C及光酸產生劑D,或者包含聚合物A2、前述聚合性化合物B、前述光聚合起始劑C、前述光酸產生劑D及化合物E,其中 前述聚合物A1為包含具有藉由酸的作用分解而生成酸基之酸分解性基X之構成單元A1a及具有羧基之構成單元A1b之聚合物, 前述聚合物A2為包含具有羧基之構成單元A1c之樹脂, 前述化合物E為具有前述酸分解性基X之化合物, 前述光酸產生劑D為選自包括鎓鹽化合物、肟磺酸鹽化合物、三𠯤化合物、硝基苄基磺酸鹽化合物、二碸化合物及雙磺醯基重氮甲烷化合物之群組中之一種以上的光酸產生劑。 A photosensitive composition comprising a polymer A1, a polymerizable compound B, a photopolymerization initiator C, and a photoacid generator D, or comprising a polymer A2, the aforementioned polymerizable compound B, the aforementioned photopolymerization initiator C, The aforementioned photoacid generator D and compound E, wherein The aforementioned polymer A1 is a polymer comprising a structural unit A1a having an acid decomposable group X that is decomposed by the action of an acid to generate an acid group, and a structural unit A1b having a carboxyl group, The aforementioned polymer A2 is a resin comprising a structural unit A1c having a carboxyl group, The aforementioned compound E is a compound having the aforementioned acid decomposable group X, The aforementioned photoacid generator D is selected from the group comprising onium salt compounds, oxime sulfonate compounds, trisulphonate compounds, nitrobenzyl sulfonate compounds, disulfide compounds and bissulfonyl diazomethane compounds More than one photoacid generator. 如請求項1所述之感光性組成物,其中 前述酸分解性基X具有酸基被藉由酸的作用分解之保護基保護而成之結構。 The photosensitive composition as described in Claim 1, wherein The aforementioned acid-decomposable group X has a structure in which an acid group is protected by a protecting group decomposed by the action of an acid. 如請求項1或請求項2所述之感光性組成物,其中 前述酸分解性基X為三級酯結構或縮醛結構。 The photosensitive composition as described in Claim 1 or Claim 2, wherein The aforementioned acid-decomposable group X is a tertiary ester structure or an acetal structure. 如請求項1或請求項2所述之感光性組成物,其中 在前述聚合物A1中,前述構成單元A1a的含量相對於所有構成單元為5~40質量%,前述構成單元A1b的含量相對於所有構成單元為10~30質量%。 The photosensitive composition as described in Claim 1 or Claim 2, wherein In said polymer A1, content of said structural unit A1a is 5-40 mass % with respect to all structural units, and content of said structural unit A1b is 10-30 mass % with respect to all structural units. 如請求項1或請求項2所述之感光性組成物,其中 前述聚合物A1的來自於羧基之酸值為150mgKOH/g以下。 The photosensitive composition as described in Claim 1 or Claim 2, wherein The acid value derived from the carboxyl group of the said polymer A1 is 150 mgKOH/g or less. 如請求項1或請求項2所述之感光性組成物,其中 前述聚合物A1的來自於羧基之酸值與來自於前述酸分解性基X藉由酸的作用全部分解時由前述酸分解性基X生成之酸基之酸值的合計值為230mgKOH/g以下。 The photosensitive composition as described in Claim 1 or Claim 2, wherein The total value of the acid value derived from the carboxyl group of the polymer A1 and the acid value derived from the acid group generated from the acid decomposable group X when the acid decomposable group X is completely decomposed by the action of an acid is 230 mgKOH/g or less . 如請求項1所述之感光性組成物,其中 前述化合物E為具有2個以上的前述酸分解性基X之化合物。 The photosensitive composition as described in Claim 1, wherein The above-mentioned compound E is a compound having two or more of the above-mentioned acid-decomposable groups X. 如請求項1或請求項7所述之感光性組成物,其中 前述化合物E為聚合物。 The photosensitive composition as described in Claim 1 or Claim 7, wherein The aforementioned compound E is a polymer. 一種感光性組成物層,其由請求項1至請求項8之任一項所述之感光性組成物形成。A photosensitive composition layer formed of the photosensitive composition described in any one of claim 1 to claim 8. 一種轉印膜,其具有:偽支撐體;及感光性組成物層,由請求項1至請求項8之任一項所述之感光性組成物形成。A transfer film comprising: a dummy support; and a photosensitive composition layer formed of the photosensitive composition described in any one of claim 1 to claim 8. 如請求項10所述之轉印膜,其在前述偽支撐體與前述感光性組成物層之間進一步具有中間層。The transfer film according to claim 10, further comprising an intermediate layer between the dummy support and the photosensitive composition layer. 如請求項11所述之轉印膜,其中 前述中間層包含水溶性樹脂。 The transfer film as described in Claim 11, wherein The aforementioned intermediate layer contains a water-soluble resin. 如請求項12所述之轉印膜,其中 前述水溶性樹脂為選自包括水溶性纖維素衍生物、多元醇類、多元醇類的氧化物加成物、聚醚類、酚衍生物及醯胺化合物之群組中之一種以上。 The transfer film as described in claim 12, wherein The water-soluble resin is at least one selected from the group consisting of water-soluble cellulose derivatives, polyols, oxide adducts of polyols, polyethers, phenol derivatives, and amide compounds. 一種具有導體圖案之積層體之製造方法,其使用請求項10至請求項13之任一項所述之轉印膜,前述具有導體圖案之積層體之製造方法具有: 貼合步驟,以前述轉印膜的與偽支撐體側相反之面與表面具有導電層之基板的前述導電層接觸之方式,將轉印膜和前述基板進行貼合; 曝光步驟,對前述感光性組成物層進行圖案曝光; 光阻圖案形成步驟,對經曝光之前述感光性組成物層實施顯影處理而形成光阻圖案; 蝕刻處理步驟或電鍍處理步驟,對位於未配置有前述光阻圖案之區域之前述導電層進行蝕刻處理或電鍍處理;及 光阻圖案剝離步驟,剝離前述光阻圖案, 當具有前述電鍍處理步驟時,進一步具有去除因前述光阻圖案剝離步驟而露出之前述導電層並在前述基板上形成導體圖案之去除步驟,其中 在前述貼合步驟與前述曝光步驟之間或前述曝光步驟與前述顯影步驟之間進一步具有剝離前述偽支撐體之偽支撐體剝離步驟。 A method for manufacturing a laminate with a conductive pattern, which uses the transfer film described in any one of claim 10 to claim 13, the method for manufacturing a laminate with a conductive pattern has: Bonding step, bonding the transfer film and the aforementioned substrate in such a way that the surface of the aforementioned transfer film opposite to the side of the dummy support is in contact with the aforementioned conductive layer of the substrate having a conductive layer on the surface; Exposure step, performing pattern exposure on the aforementioned photosensitive composition layer; A photoresist pattern forming step, performing a development treatment on the exposed photosensitive composition layer to form a photoresist pattern; an etching treatment step or an electroplating treatment step, performing etching treatment or electroplating treatment on the aforementioned conductive layer located in the region where the aforementioned photoresist pattern is not arranged; and Photoresist pattern stripping step, stripping the aforementioned photoresist pattern, When there is the aforementioned electroplating treatment step, there is further a removal step of removing the aforementioned conductive layer exposed due to the aforementioned photoresist pattern stripping step and forming a conductive pattern on the aforementioned substrate, wherein Between the laminating step and the exposing step or between the exposing step and the developing step, there is further a dummy support peeling step for peeling off the dummy support. 如請求項14所述之具有導體圖案之積層體之製造方法,其在前述光阻圖案形成步驟與前述光阻圖案剝離步驟之間進一步具有加熱步驟。The method of manufacturing a laminate having a conductor pattern according to claim 14, further comprising a heating step between the step of forming the photoresist pattern and the step of stripping the photoresist pattern. 如請求項14或請求項15所述之具有導體圖案之積層體之製造方法,其中 用於前述光阻圖案剝離步驟之剝離液的pH為13以上。 The method for manufacturing a laminate having a conductor pattern according to Claim 14 or Claim 15, wherein The pH of the stripping solution used in the aforementioned photoresist pattern stripping step is above 13. 如請求項14或請求項15所述之具有導體圖案之積層體之製造方法,其中 用於前述光阻圖案形成步驟之顯影液的pH未達13。 The method for manufacturing a laminate having a conductor pattern according to Claim 14 or Claim 15, wherein The pH of the developer used in the aforementioned photoresist pattern forming step is less than 13. 如請求項14或請求項15所述之具有導體圖案之積層體之製造方法,其中 從用於前述光阻圖案剝離步驟之剝離液的pH減去用於前述光阻圖案形成步驟之顯影液的pH之值為1以上。 The method for manufacturing a laminate having a conductor pattern according to Claim 14 or Claim 15, wherein The value obtained by subtracting the pH of the developing solution used in the resist pattern forming step from the pH of the stripping solution used in the resist pattern stripping step is 1 or more. 如請求項14或請求項15所述之具有導體圖案之積層體之製造方法,其中 從用於前述光阻圖案剝離步驟之剝離液的溫度減去用於前述光阻圖案形成步驟之顯影液的溫度之值為10℃以上。 The method for manufacturing a laminate having a conductor pattern according to Claim 14 or Claim 15, wherein A value obtained by subtracting the temperature of the developing solution used in the resist pattern forming step from the temperature of the stripping solution used in the resist pattern stripping step is 10° C. or higher. 如請求項14或請求項15所述之具有導體圖案之積層體之製造方法,其中 前述曝光步驟中的曝光方式為遮罩曝光、直接成像曝光及投影曝光中的任一種。 The method for manufacturing a laminate having a conductor pattern according to Claim 14 or Claim 15, wherein The exposure method in the foregoing exposure step is any one of mask exposure, direct imaging exposure and projection exposure. 如請求項14或請求項15所述之具有導體圖案之積層體之製造方法,其中 前述偽支撐體的厚度未達16μm。 The method for manufacturing a laminate having a conductor pattern according to Claim 14 or Claim 15, wherein The thickness of the aforementioned pseudo-support was less than 16 μm. 如請求項14或請求項15所述之具有導體圖案之積層體之製造方法,其在前述貼合步驟與前述曝光步驟之間具有前述偽支撐體剝離步驟。The method for manufacturing a laminate having a conductor pattern according to Claim 14 or Claim 15, which includes the step of peeling off the dummy support between the bonding step and the exposing step. 如請求項14或請求項15所述之具有導體圖案之積層體之製造方法,其中 前述轉印膜在前述偽支撐體與前述感光性組成物層之間包含中間層, 在前述貼合步驟與前述曝光步驟之間具有前述偽支撐體剝離步驟, 前述曝光步驟為使因前述偽支撐體剝離步驟而露出之前述中間層與遮罩接觸而實施曝光處理之步驟。 The method for manufacturing a laminate having a conductor pattern according to Claim 14 or Claim 15, wherein The transfer film includes an intermediate layer between the dummy support and the photosensitive composition layer, There is the aforementioned dummy support stripping step between the aforementioned laminating step and the aforementioned exposing step, The exposure step is a step of exposing the intermediate layer exposed by the dummy support stripping step to a mask.
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