TW202308759A - Processing liquid supply apparatus, liquid replacement method, and storage medium - Google Patents
Processing liquid supply apparatus, liquid replacement method, and storage medium Download PDFInfo
- Publication number
- TW202308759A TW202308759A TW111113996A TW111113996A TW202308759A TW 202308759 A TW202308759 A TW 202308759A TW 111113996 A TW111113996 A TW 111113996A TW 111113996 A TW111113996 A TW 111113996A TW 202308759 A TW202308759 A TW 202308759A
- Authority
- TW
- Taiwan
- Prior art keywords
- liquid
- diaphragm
- flow path
- gas
- pump
- Prior art date
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
- F04B—POSITIVE-DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS
- F04B43/00—Machines, pumps, or pumping installations having flexible working members
- F04B43/02—Machines, pumps, or pumping installations having flexible working members having plate-like flexible members, e.g. diaphragms
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
- F04B—POSITIVE-DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS
- F04B49/00—Control, e.g. of pump delivery, or pump pressure of, or safety measures for, machines, pumps, or pumping installations, not otherwise provided for, or of interest apart from, groups F04B1/00 - F04B47/00
- F04B49/08—Regulating by delivery pressure
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Reciprocating Pumps (AREA)
- Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
- Coating Apparatus (AREA)
Abstract
Description
本揭示係關於處理液供給裝置、液體置換方法及記憶媒體。The disclosure relates to a processing liquid supply device, a liquid replacement method, and a storage medium.
在專利文獻1揭示對設置有隔膜泵之流路供給洗淨液,洗淨流路的構成。
[先前技術文獻]
[專利文獻]
[專利文獻1]日本特開2016-87546號公報[Patent Document 1] Japanese Patent Laid-Open No. 2016-87546
[發明所欲解決之課題][Problem to be Solved by the Invention]
本揭示係提供適當地進行將隔膜泵之流路內的液體置換成其他流體的技術。 [用以解決課題之手段] The present disclosure provides a technology for properly performing replacement of the liquid in the flow path of the diaphragm pump with other fluid. [Means to solve the problem]
本揭示之一態樣所涉及的處理液供給裝置係從處理液供給源經由處理液流路及噴嘴而對被處理體供給處理液的處理液供給裝置,具有:隔膜泵,其係被設置在上述處理液流路內;氣體供給部,其係對上述處理液流路內供給氣體;及控制部,其係控制上述隔膜泵及上述氣體供給部之動作,上述控制部係於排出上述隔膜泵內之液體之時,使實行成為與擴大之狀態相比上述隔膜泵中之隔膜部處於收縮之狀態的步驟,和一面維持上述隔膜部收縮之狀態,一面藉由上述氣體供給部對上述隔膜泵內供給上述氣體的步驟。 [發明之效果] A processing liquid supply device according to an aspect of the present disclosure is a processing liquid supply device that supplies a processing liquid to an object to be processed from a processing liquid supply source through a processing liquid channel and a nozzle, and includes: a diaphragm pump installed on In the above-mentioned processing liquid flow path; a gas supply part, which supplies gas to the above-mentioned processing liquid flow path; and a control part, which controls the operation of the above-mentioned diaphragm pump and the above-mentioned gas supply part. When the liquid is contained in the liquid, the steps of making the diaphragm part of the diaphragm pump in the contracted state compared with the expanded state are carried out, and while maintaining the contracted state of the diaphragm part, the diaphragm pump is supplied by the gas supply part. The step of supplying the above-mentioned gas inside. [Effect of Invention]
若藉由本揭示時,提供適當地進行將隔膜泵之流路內的液體置換成其他流體的技術。 【圖式之簡單說明】 According to the present disclosure, it is possible to provide a technology for properly replacing the liquid in the flow path of the diaphragm pump with other fluids. [Simple description of the diagram]
[圖1]為表示基板處理系統之概略構成之一例的示意圖。 [圖2]為表示塗佈顯像裝置之內部構成之一例的示意圖。 [圖3]為表示液處理單元之構成之一例的示意圖。 [圖4]為表示處理液供給部之一例的示意圖。 [圖5]為表示控制裝置之硬體上構成之一例的方塊圖。 [圖6]為表示從液體置換成氣體之時的動作方法之一例的流程圖。 [圖7(a)]、[圖7(b)]為說明隔膜泵之形狀和內部之置換狀態之關係之一例的圖。 [圖8]為表示從液體置換成另外液體之時的動作方法之一例的流程圖。 [圖9(a)]、[圖9(b)]為說明隔膜泵之形狀和內部之置換狀態之關係之一例的圖。 [ Fig. 1 ] is a schematic diagram showing an example of a schematic configuration of a substrate processing system. [FIG. 2] It is a schematic diagram which shows an example of the internal structure of a coating image development apparatus. [FIG. 3] It is a schematic diagram which shows an example of the structure of a liquid processing unit. [ Fig. 4 ] is a schematic diagram showing an example of a processing liquid supply unit. [ Fig. 5 ] is a block diagram showing an example of the hardware configuration of the control device. [FIG. 6] It is a flowchart which shows an example of the operation method at the time of replacing from liquid to gas. [FIG. 7(a)] and [FIG. 7(b)] are diagrams illustrating an example of the relationship between the shape of the diaphragm pump and the internal displacement state. [ Fig. 8 ] is a flowchart showing an example of an operation method when replacing the liquid with another liquid. [FIG. 9(a)] and [FIG. 9(b)] are diagrams illustrating an example of the relationship between the shape of the diaphragm pump and the internal displacement state.
以下,針對各種例示性實施型態予以說明。Hereinafter, various exemplary implementation forms will be described.
在一個例示實施型態中,提供處理液供給裝置。處理液供給裝置係從處理液供給源經由處理液流路及噴嘴而對被處理體供給處理液的處理液供給裝置,具有隔膜泵,其係被設置在上述處理液流路內;氣體供給部,其係對上述處理液流路內供給氣體;及控制部,其係控制上述隔膜泵及上述氣體供給部之動作,上述控制部係於將上述隔膜泵內之液體置換成氣體之時,使實行上述隔膜泵中之隔膜部比起擴大之狀態成為收縮之狀態的步驟,和一面維持上述隔膜部收縮之狀態,一面藉由上述氣體供給部對上述隔膜泵內供給上述氣體的步驟。In an exemplary embodiment, a treatment liquid supply device is provided. The processing liquid supply device is a processing liquid supply device that supplies the processing liquid to the object to be processed from the processing liquid supply source through the processing liquid flow path and the nozzle, and has a diaphragm pump, which is installed in the above-mentioned processing liquid flow path; the gas supply unit , which supplies gas to the above-mentioned processing liquid flow path; and a control part, which controls the operation of the above-mentioned diaphragm pump and the above-mentioned gas supply part, and the above-mentioned control part is when replacing the liquid in the above-mentioned diaphragm pump with gas. A step of contracting the diaphragm portion of the diaphragm pump from an expanded state, and a step of supplying the gas from the gas supply unit into the diaphragm pump while maintaining the contracted state of the diaphragm portion are carried out.
在上述處理液供給裝置中,於排出隔膜泵內之液體而置換成氣體之時,與擴大之狀態相比隔膜泵中之隔膜部處於收縮之狀態,並且一面維持其狀態,一面氣體被供給至隔膜泵內。藉由設為如此的構成,於將隔膜泵內之液體置換成氣體之時,防止液體殘留在泵浦內之情形。因此,適當地進行從隔膜泵之流路內之液體置換成氣體。In the above-mentioned treatment liquid supply device, when the liquid in the diaphragm pump is discharged and replaced with gas, the diaphragm part of the diaphragm pump is in a contracted state compared with the expanded state, and while maintaining this state, the gas is supplied to the inside the diaphragm pump. With such a configuration, when replacing the liquid in the diaphragm pump with gas, it is possible to prevent the liquid from remaining in the pump. Therefore, the replacement of the liquid in the flow path of the diaphragm pump with gas is appropriately performed.
上述控制部可以設為在將上述隔膜泵內之液體置換成另外種類的液體之時,實行一面維持上述隔膜部能夠擴大之狀態,一面對上述隔膜泵內供給上述另外種類液體的態樣。藉由設為上述構成,於將隔膜泵內之液體置換成另外種類的液體之時,促進置換前的液體,和另外種類之液體在泵浦內混合。因此,從隔膜泵之流路內之液體置換成另外種類之液體適當地被進行。The control unit may supply the different type of liquid into the diaphragm pump while maintaining the expandable state of the diaphragm when replacing the liquid in the diaphragm pump with another type of liquid. With the above configuration, when the liquid in the diaphragm pump is replaced with another type of liquid, mixing of the liquid before replacement and the different type of liquid in the pump is promoted. Therefore, replacement of the liquid in the flow path of the diaphragm pump with another type of liquid is properly performed.
可以設為上述控制部係藉由控制在上述隔膜泵中藉由加壓部加壓上述隔膜部之壓力,控制上述隔膜部之形狀的態樣。藉由設為上述構成,可以利用加壓部所致的加壓,柔軟地進行隔膜部之形狀的控制。The control unit may control the shape of the diaphragm unit by controlling the pressure of the diaphragm unit pressurized by the pressurizing unit in the diaphragm pump. With the above configuration, it is possible to flexibly control the shape of the diaphragm portion by utilizing the pressurization by the pressurizing portion.
可以設為上述控制部係於排出上述隔膜泵內之液體之時,藉由增大藉由上述加壓部加壓上述隔膜部之壓力,維持藉由上述氣體供給部供給上述氣體之時上述隔膜部收縮之狀態的態樣。藉由設為上述構成,即使在增大對泵浦內供給的氣體之流速之情況,亦可以維持隔膜部收縮之狀態,適當地進行從隔膜泵之流路內之液體置換成氣體。The control unit may maintain the diaphragm when the gas is supplied by the gas supply unit by increasing the pressure of the diaphragm unit pressurized by the pressurizing unit when the liquid in the diaphragm pump is discharged. The appearance of the state of contraction. With the above configuration, even when the flow rate of the gas supplied to the pump is increased, the contracted state of the diaphragm can be maintained, and the liquid in the flow path of the diaphragm pump can be replaced with gas appropriately.
可以設為上述氣體供給部可以與為了從上述處理液供給源朝向上述處理液流路供給上述處理液而被使用的氣體供給系統另外被設置,在較上述隔膜泵更上游,對上述處理液流路內供給上述氣體的態樣。藉由設為上述構成,可以與處理液供給源周圍的氣體供給系統獨立地進行隔膜泵內之液體的置換。再者,若藉由上述構成時,能防止氣體供給部之動作對氣體供給系統造成影響。The gas supply unit may be provided separately from a gas supply system used to supply the treatment liquid from the treatment liquid supply source to the treatment liquid flow path, and may be provided upstream of the diaphragm pump to supply the flow of the treatment liquid. The mode of supplying the above-mentioned gas in the road. By adopting the above configuration, replacement of the liquid in the diaphragm pump can be performed independently of the gas supply system around the processing liquid supply source. Furthermore, according to the above configuration, it is possible to prevent the operation of the gas supply part from affecting the gas supply system.
在另外的例示實施型態中,提供液體置換方法。液體置換方法係從處理液供給源經由處理液流路及噴嘴而對被處理體供給處理液的處理液供給裝置中之液體置換方法,具有:上述處理液供給裝置具有:隔膜泵,其係被設置在上述處理液流路內;氣體供給部,其係對上述處理液流路內供給惰性氣體;及控制部,其係控制上述隔膜泵及上述氣體供給部之動作,包含:於將上述隔膜泵內之液體置換成氣體之時,藉由上述控制部,使成為與擴大之狀態相比上述隔膜泵中之隔膜部處於收縮之狀態的步驟,和藉由上述控制部,一面維持上述隔膜部收縮之狀態,一面藉由上述氣體供給部對上述隔膜泵內供給上述惰性氣體,依此排出上述隔膜泵內之上述液體的步驟。In another exemplary embodiment, a liquid displacement method is provided. The liquid replacement method is a liquid replacement method in a processing liquid supply device that supplies a processing liquid to an object to be processed from a processing liquid supply source through a processing liquid flow path and a nozzle. The processing liquid supply device includes: a diaphragm pump, which is installed in the above-mentioned processing liquid flow path; a gas supply part, which supplies an inert gas to the above-mentioned processing liquid flow path; and a control part, which controls the operation of the above-mentioned diaphragm pump and the above-mentioned gas supply part, including: When the liquid in the pump is replaced with gas, the control unit makes the diaphragm in the diaphragm pump shrink compared to the expanded state, and the control unit maintains the diaphragm. In the contracted state, the above-mentioned inert gas is supplied into the above-mentioned diaphragm pump by the above-mentioned gas supply part, and the above-mentioned liquid in the above-mentioned diaphragm pump is discharged accordingly.
在上述液體置換方法中,排出隔膜泵內之液體而置換成氣體之時,隔膜泵中之隔膜部比起擴大之狀態被設為收縮之狀態,而且一面維持其狀態,一面氣體被供給至隔膜泵內。藉由設為如此的構成,於將隔膜泵內之液體置換成氣體之時,防止液體殘留在泵浦內之情形。因此,適當地進行從隔膜泵之流路內之液體置換成氣體。In the above-mentioned liquid replacement method, when the liquid in the diaphragm pump is discharged to replace it with gas, the diaphragm part of the diaphragm pump is contracted from the expanded state, and the gas is supplied to the diaphragm while maintaining this state. inside the pump. With such a configuration, when replacing the liquid in the diaphragm pump with gas, it is possible to prevent the liquid from remaining in the pump. Therefore, the replacement of the liquid in the flow path of the diaphragm pump with gas is appropriately performed.
可以設為進一步包含在將上述隔膜泵內之液體置換成另外種類的液體之時,藉由上述控制部一面維持上述隔膜部能夠擴大之狀態,一面對上述隔膜泵內供給上述另外種類液體的態樣。藉由設為上述構成,於將隔膜泵內之液體置換成另外種類的液體之時,促進置換前的液體,和另外種類之液體在泵浦內混合。因此,隔膜泵之流路內之液體置換成另外種類之液體適當地被進行。When replacing the liquid in the diaphragm pump with another type of liquid, the controller may further supply the different type of liquid into the diaphragm pump while maintaining the state where the diaphragm portion can be expanded. appearance. With the above configuration, when the liquid in the diaphragm pump is replaced with another type of liquid, mixing of the liquid before replacement and the different type of liquid in the pump is promoted. Therefore, replacement of the liquid in the flow path of the diaphragm pump with another type of liquid is properly performed.
可以設為上述隔膜部之形狀的控制係藉由控制在上述隔膜泵中藉由加壓部加壓上述隔膜部的壓力而被進行的態樣。藉由設為上述構成,可以利用加壓部所致的加壓,柔軟地進行隔膜部之形狀的控制。The control of the shape of the diaphragm part may be performed by controlling the pressure of the diaphragm part pressurized by the pressurizing part in the diaphragm pump. With the above configuration, it is possible to flexibly control the shape of the diaphragm portion by utilizing the pressurization by the pressurizing portion.
可以設為於排出上述隔膜泵內之液體之時,藉由增大藉由上述加壓部加壓上述隔膜部之壓力,維持藉由上述氣體供給部供給上述惰性氣體之時上述隔膜部收縮之狀態的態樣。藉由設為上述構成,即使在增大對泵浦內供給的氣體之流速之情況,亦可以維持隔膜部收縮之狀態,適當地進行從隔膜泵之流路內之液體置換成氣體。When the liquid in the diaphragm pump is discharged, the pressure of the diaphragm part pressurized by the pressurizing part can be increased so that the contraction of the diaphragm part when the inert gas is supplied by the gas supply part can be maintained. The shape of the state. With the above configuration, even when the flow rate of the gas supplied to the pump is increased, the contracted state of the diaphragm can be maintained, and the liquid in the flow path of the diaphragm pump can be replaced with gas appropriately.
可以設為上述氣體供給部係與為了從上述處理液供給源朝向上述處理液流路供給上述處理液而被使用的氣體供給系統另外被設置,在較上述隔膜泵更上游對上述處理液流路內供給惰性氣體的態樣。藉由設為上述構成,可以與處理液供給源周圍的氣體供給系統獨立地進行隔膜泵內之液體的置換。再者,若藉由上述構成時,能防止氣體供給部之動作對氣體供給系統造成影響。The gas supply unit may be provided separately from a gas supply system used to supply the treatment liquid from the treatment liquid supply source to the treatment liquid flow path, and may be provided upstream of the diaphragm pump to the treatment liquid flow path. A state in which an inert gas is supplied inside. By adopting the above configuration, replacement of the liquid in the diaphragm pump can be performed independently of the gas supply system around the processing liquid supply source. Furthermore, according to the above configuration, it is possible to prevent the operation of the gas supply part from affecting the gas supply system.
在一個例示性實施型態中,提供記憶有使裝置實行上述液體置換方法的程式的電腦可讀取的記憶媒體。上述記憶媒體具有與上述液體置換方法相同的效果。In an exemplary embodiment, a computer-readable memory medium storing a program for causing a device to perform the above-mentioned liquid replacement method is provided. The memory medium described above has the same effect as the liquid replacement method described above.
[例示性的實施型態] 以下,參照圖面,針對各種例示實施型態予以詳細說明。另外,在各圖面中,針對相同或相當之部分賦予相同符號。 [Exemplary Implementation Type] Hereinafter, various exemplary embodiments will be described in detail with reference to the drawings. In addition, in each drawing, the same code|symbol is attached|subjected to the same or equivalent part.
[基板處理系統]
首先,參照圖1~圖5說明一實施型態所涉及之基板處理系統。圖1所示的基板處理系統1係對基板,施予感光性覆膜之形成、該感光性覆膜之曝光及該感光性覆膜之顯像的系統。處理對象之工件W(基板)為例如半導體用之基板。以矽晶圓作為基板之一例。即使工件W被形成圓形亦可。再者,即使處理對象之工件W為玻璃基板、光罩基板或FPD(Flat Panel Display)等亦可。即使工件W之一部分具有被切口的缺口部亦可。即使缺口部為例如溝槽(U字形、V字形等之溝)亦可,即使為直線狀延伸的直線部(所謂的定向平面)亦可。再者,感光性覆膜為例如光阻膜。
[Substrate Processing System]
First, a substrate processing system according to an embodiment will be described with reference to FIGS. 1 to 5 . The
基板處理系統1具備塗佈顯像裝置2和曝光裝置3。曝光裝置3進行被形成在工件W(基板)上之光阻膜(感光性覆膜)之曝光處理。具體而言,藉由液浸曝光等之方法,對光阻膜之曝光對象部分照射能量線。塗佈顯像裝置2係在曝光裝置3所致的曝光處理之前,對工件W(基板)之表面進行形成光阻膜之處理,於曝光處理後,進行光阻膜之顯像處理。The
[基板處理裝置]
以下,作為基板處理裝置之一例,說明塗佈顯像裝置2之構成。如圖1及圖2所示般,塗佈顯像裝置2具備載體區塊4、處理區塊5、介面區塊6和控制裝置100。
[Substrate Processing Equipment]
Hereinafter, the configuration of the coating and developing
載體區塊4係進行工件W朝塗佈顯像裝置2內的導入及工件W從塗佈顯像裝置2內的導出。例如載體區塊4能夠支持工件W用之複數載體C,內置包含收授臂的搬運裝置A1。載體C收容例如圓形之複數片工件W。搬運裝置A1從載體C取出工件W而交給處理區塊5,從處理區塊5接取工件W而返回至載體C內。The
處理區塊5具有複數處理模組11、12、13、14。處理模組11、12、13、14係內置有液處理單元U1、熱處理單元U2、包含將工件W搬運至該些單元之搬運臂的搬運裝置A3。The
處理模組11係藉由液處理單元U1及熱處理單元U2在工件W之表面上形成下層膜。處理模組11之液處理單元U1係在工件W上塗佈下層膜形成用之處理液。處理模組11之熱處理單元U2係進行伴隨著下層膜之形成的各種熱處理。The
處理模組12係藉由液處理單元U1及熱處理單元U2,在下層膜上形成光阻膜。處理模組12之液處理單元U1係在下層膜上塗佈光阻膜形成用之處理液。處理模組12之熱處理單元U2係進行伴隨著光阻膜之形成的各種熱處理。The
處理模組13係藉由液處理單元U1及熱處理單元U2,在光阻膜上形成上層膜。處理模組13之液處理單元U1係在光阻膜上塗佈上層膜形成用之液體。處理模組13之熱處理單元U2係進行伴隨著上層膜之形成的各種熱處理。The
處理模組14係藉由液處理單元U1及熱處理單元U2,進行曝光後之光阻膜的顯像處理。液處理單元U1係在曝光完的工件W之表面上塗佈顯像液。再者,液處理單元U1係藉由沖洗液沖洗被塗佈的顯像液。熱處理單元U2係進行伴隨著顯像處理的各種熱處理。作為熱處理之具體例,可舉出顯像處理前之加熱處理(PEB:Post Exposure Bake)、顯像處理後之加熱處理(PB:Post Bake)等。The
在處理區塊5內之載體區塊4側,設置有棚架單元U10。棚架單元U10被區劃成在上下方向排列之複數的單元。在棚架單元U10之附近設置有包含升降臂的搬運裝置A7。搬運裝置A7在棚架單元U10之單元彼此之間使工件W升降。On the side of the
在處理區塊5內之介面區塊6側,設置有棚架單元U11。棚架單元U11被區劃成在上下方向排列之複數的單元。On the side of the
介面區塊6係在與曝光裝置3之間進行工件W之收授。例如,介面區塊6內置包含收授臂的搬運裝置A8,被連接於曝光裝置3。搬運裝置A8係將被配置在棚架單元U11的工件W轉交至曝光裝置3。搬運裝置A8係從曝光裝置3接取工件W而返回至棚架單元U11。The
控制裝置100係以例如以下之順序實行塗佈顯像處理之方式,控制塗佈顯像裝置2。首先,控制裝置100係以使將載體C內之工件W搬運至棚架單元U10之方式控制搬運裝置A1,以將該工件W配置在處理模組11用之單元之方式,控制搬運裝置A7。The
接著,控制裝置100係以將棚架單元U10之工件W搬運至處理模組11內之液處理單元U1及熱處理單元U2之方式,控制搬運裝置A3。再者,控制裝置100係以在該工件W之表面上形成下層膜之方式,控制液處理單元U1及熱處理單元U2。之後,控制裝置100係以將形成有下層膜的工件W返回至棚架單元U10之方式,控制搬運裝置A3,以將該工件W配置在處理模組12用之單元之方式,控制搬運裝置A7。Next, the
接著,控制裝置100係以將棚架單元U10之工件W搬運至處理模組12內之液處理單元U1及熱處理單元U2之方式,控制搬運裝置A3。再者,控制裝置100係以在該工件W之下層膜上形成光阻膜之方式,控制液處理單元U1及熱處理單元U2。之後,控制裝置100係以將工件W返回至棚架單元U10之方式,控制搬運裝置A3,以將該工件W配置在處理模組13用之單元之方式,控制搬運裝置A7。Then, the
接著,控制裝置100係以將棚架單元U10之工件W搬運至處理模組13內之各單元之方式,控制搬運裝置A3。再者,控制裝置100係以在該工件W之光阻膜上形成上層膜之方式,控制液處理單元U1及熱處理單元U2。之後,控制裝置100係以將工件W搬運至棚架單元U11之方式,控制搬運裝置A3。Next, the
接著,控制裝置100係以將棚架單元U11之工件W送出至曝光裝置3之方式,控制搬運裝置A8。之後,控制裝置100係以從曝光裝置3接收被施予曝光處理之工件W而配置在棚架單元U11中之處理模組14用之單元之方式,控制搬運裝置A8,Next, the
接著,控制裝置100係以將棚架單元U11之工件W搬運至處理模組14內之各單元之方式,控制搬運裝置A3,以對該工件W之光阻膜施予顯像處理之方式,控制液處理單元U1及熱處理單元U2。之後,控制裝置100係以將工件W返回至棚架單元U10之方式,控制搬運裝置A3,以將該工件W返回至載體C內之方式,控制搬運裝置A7及搬運裝置A1。以上,完成塗佈顯像處理。Next, the
另外,基板處理裝置之具體構成不限定於上述例示的塗佈顯像裝置2之構成。若基板處理裝置具備對工件W吐出處理液而進行液處理的液處理單元,和能夠控制此的控制裝置時,無論何者亦可。In addition, the specific structure of a substrate processing apparatus is not limited to the structure of the coating
(液處理單元)
接著,參照圖3及圖4,針對在處理模組12的液處理單元U1之一例予以詳細說明。液處理單元U1具備旋轉保持部20、處理液供給部30。液處理單元U1及控制液處理單元U1的控制裝置100(控制部)具有對應於本實施型態中之處理液供給裝置的構成。
(liquid handling unit)
Next, an example of the liquid processing unit U1 in the
旋轉保持部20係根據控制裝置100之動作指示,保持工件W並使旋轉。旋轉保持部20具有保持部21和驅動部22。保持部21係使表面Wa朝向上方而支持被水平配置之工件W之中心部,藉由吸附(例如真空吸附)等保持該工件W。驅動部22係包含例如電動馬達等的動力源之旋轉致動器,使保持部21繞垂直的旋轉軸旋轉。依此,工件W繞垂直的旋轉軸旋轉。The
處理液供給部30係對被旋轉保持於旋轉保持部20的工件W供給處理液。處理液供給部30係如圖3及圖4所示般,具有吐出部40、處理液供給源50和送液系統60。送液系統60係包含供給處理液之流路及流路中之送液用的泵浦、閥體等而被構成。而且,送液系統60也包含供給能被使用於送液之調整等的惰性氣體之氣體供給系統80而被構成。The processing
吐出部40係朝向工件W之表面Wa而吐出處理液。吐出部40具備噴嘴41和送液管42。噴嘴41係對工件W吐出處理液。噴嘴41係如圖3所示般,例如被配置在工件W之上方,對下方吐出處理液。送液管42係將處理液引導至噴嘴41。藉由從噴嘴41朝向工件W吐出處理液,在工件W塗佈(供給)處理液。The
如圖4所示般,處理液能從處理液供給源50被供給。處理液供給源50為貯留處理液的液槽,相對於送液系統60能夠裝卸。另外,於洗淨送液系統60之時,能夠代替處理液供給源50,在相同位置設置貯留洗淨液的洗淨液供給源。As shown in FIG. 4 , the treatment liquid can be supplied from a treatment
處理液供給源50係經由設置有閥體V81之氣體供給路R81而被連接於供給例如氮(N
2)等之惰性氣體的氣體供給源81。氣體供給源81及氣體供給路R81係構成加壓處理液供給源50內之液面而使處理液從處理液供給源50移動的加壓機構。再者,即使在氣體供給路R81另外設置用以排氣惰性氣體的路徑亦可。氣體供給源81及氣體供給路R81係氣體供給系統80之一部分。另外,氣體供給源81及氣體供給路R81具有作為用以使處理液從處理液供給源50(或代替被連接的供給源)對下游的流路L移動的氣體供給系統之功能。
The processing
在被連接於處理液供給源50之流路L1,作為送液系統60,從上游側依序設置有閥體V1、中間槽61、輔助泵62、泵浦流路系統70、分配閥(液吐出用閥)V2及閥體V3。分配閥V2具有吐出事先被設定的液量的處理液的功能。In the flow path L1 connected to the processing
中間槽61係經由對其上游之流路L1連接的設置有閥體V82的氣體供給路R82而被連接於供給例如氮(N
2)等之惰性氣體的氣體供給源82。再者,即使針對輔助泵62,也經由對其上游之流路L1連接的設置有閥體V83之氣體供給路R83而被連接於氣體供給源82。該些氣體供給源82及氣體供給路R82、R83係被使用於將包含中間槽61及輔助泵62之送液系統60內之液體置換成氣體之情況。針對該點於後述。氣體供給源82及氣體供給路R82、R83係氣體供給系統80之一部分。再者,氣體供給源82及氣體供給路R82、R83具有用以將作為將輔助泵62內之液體排出且置換成氣體的氣體供給部的功能。針對該點,氣體供給源82及氣體供給路R82、R83之功能係與氣體供給源81及氣體供給路R81之功能不同。
The
中間槽61係貯留處理液供給源50內之處理液,吸入,將吸入後的處理液朝向下游送出。即使在中間槽61之上面連接從處理液供給源50而來的流路,在下面連接朝向下游之輔助泵62的流路亦可。中間槽61具有例如收容處理液的收容室,即使具有作為泵浦的功能,且該泵浦具有使收容室予以收縮的收縮部亦可。在此情況,即使中間槽61使用例如管式隔膜泵、隔膜泵或波紋管泵亦可。另外,即使在中間槽61設置用以排出內部之氣體的排出管61a亦可。即使排出管61a被使用於例如在收容室排出從處理液中被分離的氣體亦可。The
輔助泵62具有在泵浦流路系統70之上游進行朝泵浦流路系統70的送液的功能。輔助泵62係由例如隔膜泵構成。輔助泵62包含加壓部621及泵浦內流路622。加壓部621係使用例如壓縮空氣G1而加壓泵浦內流路622。再者,泵浦內流路622具有隔膜部622a,能夠藉由加壓部621之加壓強制性地變更其形狀。藉由調整壓縮空氣G1,泵浦內流路622之隔膜部622a變形。如此一來,輔助泵62係使藉由加壓部621對泵浦內流路622的加壓之程度變化而變更泵浦內流路622之大小(容積)。即是,藉由在縮小加壓部621所致的加壓的狀態,擴大泵浦內流路622之隔膜,容納處理液,增大加壓部621所致的加壓,使泵浦內流路622之隔膜收縮而送出處理液。在輔助泵62設置液供給用之閥體V61及液排出用之閥體V62。The
泵浦流路系統70係從下游側依序包含泵浦71、捕集部72、過濾器部73和閥體V70。在過濾器部73,安裝用以除去處理液中之微粒的過濾器。The
泵浦71係用以對噴嘴41吐出處理液,由例如隔膜泵構成。泵浦71包含加壓部711及泵浦內流路712。加壓部711係使用例如壓縮空氣G1而加壓泵浦內流路712。再者,泵浦內流路712具有隔膜部712a,能夠藉由加壓部711之加壓強制性地變更其形狀。藉由調整壓縮空氣G2,泵浦內流路712之隔膜部712a變形。藉由在縮小加壓部711所致的加壓的狀態,擴大泵浦內流路712之隔膜,容納處理液,增大加壓部711所致的加壓,使泵浦內流路712之隔膜收縮而送出處理液。The
再者,在泵浦71,設置液供給用之閥體V71、液排出用之閥體V72及排氣用之閥體V73。排氣用之閥體V73和捕集部72之間藉由流路L71被連接。再者,在流路L1中之閥體V70之上游側和泵浦71之間,設置經由捕集部72而旁通過濾器部73,同時具有閥體V75的旁通路L72。過濾器部73及捕集部72分別被連接於具有排氣用之閥體(無圖示)的排出路L73。另外,在以下的實施型態中,有包含作為主要流路的流路L1,和流路L71和旁通路L72而稱為「流路L」之情況。Furthermore, the
被設置在上述送液系統60之閥體之中,分配閥V2之外的閥體可以使用例如空氣操作機閥。但是,閥體之構成不限定於此。Among the valve bodies provided in the above-mentioned
接著,參照圖4及圖5,針對控制裝置100予以詳細說明。控制裝置100具有使用處理液供給部30,使處理液從處理液供給源50朝後段的吐出部40(噴嘴41)送出的功能。再者,被構成於進行處理液供給源50之更換、送液系統60之洗淨之情況,控制送液系統60之各部。Next, the
如圖4所示般,控制裝置100包含泵浦控制部101、氣體供給控制部102、液體供給控制部103和動作指令保持部104,作為功能上之模組(以下,稱為「功能模組」)。As shown in FIG. 4, the
泵浦控制部101係進行送液系統60中之「與液體有關的置換動作」之情況,以使輔助泵62動作之方式,控制處理液供給部30。具體的動作係在動作指令保持部104中被保持的動作指令中被指定。泵浦控制部101係根據動作指令,控制輔助泵62。與液體有關的置換動作係指將送液系統60中之液體置換成氣體或另外種類的液體的動作。在送液系統60內之洗淨、維修等的情況,會發生排出送液系統60之流路L內之處理液,置換成氣體或另外種類的液體之作業。另外,置換成氣體之情況,成為置換對象的氣體,成為在氣體供給系統80中被使用的氣體。具體而言,例如使用惰性氣體(例如,氮)。再者,成為置換成另外液體之情況之對象的液體,成為例如代替處理液供給源50連接液源的液體(例如,作為洗淨液被使用的稀釋劑等)。再者,置換前的液體也使用作為洗淨液被使用的稀釋劑,例如也假設從彼此不同的種類之稀釋劑A置換成稀釋劑B的情況。泵浦控制部101進行如此之動作之情況的控制。The
氣體供給控制部102係進行送液系統60中之「與液體有關的置換動作」之情況,以使氣體供給系統80動作之方式,控制處理液供給部30。具體的動作係在動作指令保持部104中被保持的動作指令中被指定。氣體供給控制部102係根據動作指令,控制氣體供給系統80之各部。The gas
液體供給控制部103主要係以從噴嘴41吐出處理液之方式,控制處理液供給部30。即是,液體供給控制部103係進行對工件W供給處理液之時之動作的通常動作的控制。再者,液體供給控制部103也具有控制更換處理液供給源50之時之處理液供給部30的功能。針對該些動作時之各部之動作,在動作指令保持部104中被保持的動作指令被指定。液體供給控制部103係根據動作指令,控制處理液供給部30之各部。The liquid
動作指令保持部104係保持規定在液處理單元U1中被實行的液處理順序的動作指令。即使在該動作指令中,包含規定從噴嘴41對工件W吐出處理液之時的各部之動作的資訊、規定更換處理液供給源50之時的各部之動作的資訊,規定進行送液系統60之洗淨動作之情況之各部之動作的資訊等亦可。The operation
控制裝置100係藉由一個或複數控制用電腦而構成。例如,控制裝置100具有圖5所示之電路120。電路120具有一個或複數處理器121、記憶體122、儲存器123、輸出入埠124和計時器125。The
儲存器123具有例如硬碟等、藉由電腦可讀取的記憶媒體。記憶媒體係記錄使塗佈顯像裝置2實行後述液處理步驟的程式。即使記憶媒體為非揮發性之半導體記憶體、磁碟及光碟等之能取出的媒體亦可。記憶體122係暫時性地記錄從儲存器123之記憶媒體載入的程式及處理器121所致的運算結果。處理器121藉由與記憶體122合作而實行上述程式,構成上述各功能模組。輸入輸出埠124係在與處理液供給部30之各部之間進行電訊號的輸入輸出。The
另外,控制裝置100之硬體構成不一定要限定在藉由程式構成各功能模組者。例如,控制裝置100之各功能模組即使藉由專用的邏輯電路或將此予以積體的ASIC(Application Specific Integrated Circuit)而被構成亦可。In addition, the hardware configuration of the
[液體置換方法] 作為上述基板處理裝置之控制方法之一例,針對置換送液系統60中之液體的方法(液體置換方法)予以說明。 [Liquid replacement method] As an example of the control method of the substrate processing apparatus described above, a method of replacing the liquid in the liquid feeding system 60 (liquid replacement method) will be described.
於對工件W進行處理液供給動作之通常動作之情況,在送液系統60之流路L(流路L1、流路L71、旁通路L72)存在從處理液供給源50被供給的處理液。另一方面,如上述般,在進行「與液體有關的置換動作」之情況,將送液系統60內液體置換成氣體或另外種類的液體。In the normal operation of supplying the processing liquid to the workpiece W, the processing liquid supplied from the processing
首先,一面參照圖6所示的流程圖,一面說明將流路L中之液體置換成氣體之情況的輔助泵62周圍之動作之步驟的一例。該作業對應於所謂的去液作業。First, an example of the operation procedure around the
首先,在步驟S01中,控制裝置100開始將流路L中之液體(例如,處理液)置換成氣體(gas)的動作。具體而言,控制裝置100係讀取例如對應於在動作指令保持部104中被保持的從液體置換成氣體的動作指令。First, in step S01 , the
接著,在步驟S02及步驟S03中,控制裝置100之泵浦控制部101係加壓輔助泵62之加壓部621(步驟S02)、限制泵浦內流路622之形狀變化(步驟S03)。具體而言,增加對加壓部621供給的壓縮空氣G1之量,增大加壓部621之內壓。其結果,在泵浦內流路622稍微收縮的狀態下,隔膜部622a之變形所致的泵浦內流路622之剖面積之增大被限制,泵浦內流路622全體之容量的增大也被限制。因此,即使在內部流動的流體增加的情況,並非泵浦內流路622自由變化的狀態,也會引起內部之流體的壓力之變化或流體朝下游移動。Next, in step S02 and step S03, the
作為相對於加壓部621的加壓之程度,例如與通常使用時(朝工件W吐出處理液時)相比,為泵浦內流路622之形狀被限制的程度。再者,與泵浦內流路622之容積成為最大之情況的容積相比,能調整為泵浦內流路622內之容積成為15%~25%程度。防止由於藉由加壓部621加壓成容積成為該範圍,而成為例如隔膜部622a與周圍的泵浦內流路622密接而無法簡單地剝離之狀態。The degree of pressurization to the pressurizing
通常使用時,在輔助泵62中,於處理液朝輔助泵62導入時,成為縮小壓縮空氣G1之導入量而不進行加壓部621所致的泵浦內流路622之加壓(或是幾乎不加壓)的狀態。將此情況的加壓部621所致的加壓之大小設為例如第1壓力。另一方面,於從輔助泵62朝下游側排出處理液之時,增大壓縮空氣G1之導入量而藉由加壓部621加壓並使泵浦內流路622收縮。將此情況的加壓部621所致的加壓之大小設為例如第2壓力。即是,通常使用時,加壓部621所致的加壓之大小能在第1壓力和第2壓力之間調整。第1壓力例如為0kPa,第2壓力例如為35kPa。In normal use, when the treatment liquid is introduced into the
另一方面,雖然在上述步驟S02、S03中之加壓的大小較大於第1壓力,但是能以小於第2壓力之程度設定。但是,如上述般,設為泵浦內流路622之形狀被限制的程度,成為即使朝泵浦內流路622供給的流體之流量增加,泵浦內流路622之變形也被限制的狀態。作為一例,在步驟S02、S03中之加壓的大小能設為相對於第2壓力為50%~80%程度。當步驟S02、S03中之加壓之大小接近於第2壓力之值時,有在泵浦內流路622之容積接近於0之狀態下被維持的可能性。在此情況,如上述般,會發生例如隔膜部622a與周圍之泵浦內流路622密接而無法簡單剝離之狀況。當發生該狀況時,有可能在後段實施的泵浦內流路622內之氣體的流通本身變得困難。另一方面,藉由將加壓之程度事先設定為大於某程度,於導入在後段實施的氣體之時,除了無問題地進行氣體的流通外,也能夠將泵浦內流路622之變形抑制成某程度。On the other hand, although the magnitude of the pressurization in the above-mentioned steps S02 and S03 is larger than the first pressure, it can be set to be smaller than the second pressure. However, as described above, assuming that the shape of the pump
接著,在步驟S04中,控制裝置100之氣體供給控制部102係在將輔助泵62維持在上述狀態的原樣下,供給惰性氣體。具體而言,從氣體供給源82經由氣體供給路R82或氣體供給路R83,而對流路L內導入惰性氣體,朝輔助泵62內供給惰性氣體。要使用氣體供給路R82及氣體供給路R83中之哪一個能根據要將送液系統60中之哪一個區域置換成氣體等而變更。Next, in step S04, the gas
藉由對輔助泵62內導入惰性氣體,滯留在內部的液體朝下游側被排出。此時,當一增大惰性氣體之流速(增大沖洗壓)時,朝輔助泵62之泵浦內流路622內供給惰性氣體的速度就變化。防止當一面將惰性氣體之流速增大至某程度,一面朝泵浦內流路622內一導入時,將泵浦內流路622內之液體置換成惰性氣體之時,置換前的液體殘留在泵浦內流路622內之情形。再者,如上述般,在藉由加壓部621限制泵浦內流路622之變形之狀態下導入惰性氣體之情況,因在泵浦內流路622內惰性氣體的壓力變高,故液體朝下游側的移動進一步被促進。另一方面,當惰性氣體之流速過小時,有不進行與在泵浦內流路622內的液體之置換而惰性氣體朝下游側移動的可能性。By introducing the inert gas into the
圖7(a)及圖7(b)係示意性地表示有無泵浦內流路622變形所致的液體之殘留量的變化圖。實際上,雖然僅有隔膜部622a變形,但是在圖7中,示意性地表示隔膜部622a之變形所致的泵浦內流路622之容積之變化。圖7(a)係表示如上述般在藉由加壓部621,限制泵浦內流路622之變形的狀態(抑制隔膜部之擴大的狀態)下,導入惰性氣體之狀態的例。如圖7(a)之左圖所示般,在泵浦內流路622內滯留當初置換前之液體F。在該狀態下,當一面抑制泵浦內流路622之形狀變化一面導入惰性氣體時,如中央圖所示般,泵浦內流路622內之液體F朝下游側移動,如右圖所示般,在液體F之殘留被抑制的狀態下,內部被置換成惰性氣體。另一方面,在容許泵浦內流路622之變形之狀態的情況,泵浦內流路622會藉由被導入的惰性氣體之壓力而變形。具體而言,如圖7(b)之左圖所示般,在泵浦內流路622內滯留當初置換前之液體F。在該狀態下,當不抑制泵浦內流路622之形狀的變化而導入惰性氣體時,如中央圖所示般,雖然泵浦內流路622內之液體F朝下游側移動,但是在惰性氣體之壓力並不相當高的情況,液體F之一部分會殘留在泵浦內流路622內。其結果,如右圖所示般,在泵浦內流路622內殘留液體F之一部分之狀態下被置換成惰性氣體。7( a ) and FIG. 7( b ) are diagrams schematically showing changes in the residual amount of liquid caused by the deformation of the pump
如此一來,在限制(抑制)泵浦內流路622之變形之狀態,當從液體置換成氣體(例如,惰性氣體)時,隨著氣體的導入,液體F朝下游側的移動被促進。因此,容易防止液體在泵浦內流路622內殘留。因此,可以一面縮小置換前之液體的殘留量,一面進行朝氣體的置換。In this way, when the deformation of the pump
接著,一面參照圖8所示的流程圖,一面說明將流路L中之液體置換成另外種類的液體之情況的輔助泵62周圍之動作之步驟的一例。該作業會於例如洗淨流路L之時發生。Next, an example of the operation procedure around the
首先,在步驟S11中,控制裝置100開始將流路L中之液體(例如,第1洗淨液)置換成另外的液體(例如,第2洗淨液)的動作。具體而言,控制裝置100係讀取例如對應於在動作指令保持部104中被保持的液體間的置換的動作指令。First, in step S11, the
接著,在步驟S12及步驟S13中,控制裝置100之泵浦控制部101係加壓輔助泵62之加壓部621(步驟S12)、縮小對泵浦內流路622之加壓,成為形狀變化容易的狀態(步驟S13)。具體而言,減少對加壓部621供給的壓縮空氣G1之量,形成加壓部621不加壓泵浦內流路622之程度的狀態。其結果,液體被導入至泵浦內流路622之情況,泵浦內流路622成為可以自由變形的狀態。實際上,因在泵浦內流路622內存在置換前之液體的狀態,故泵浦內流路622成為容積大的狀態。在步驟S12、S13之加壓的大小能設為上述第1壓力程度。具體而言,泵浦內流路622可以因應泵浦內流路622內之液體的量而自由變形的程度。Next, in step S12 and step S13, the
接著,在步驟S14中,控制裝置100之泵浦控制部101係在將輔助泵62維持在上述狀態的原樣下,供給置換後之液體。具體而言,在對應於處理液供給源50之位置,設置置換後之液體的供給源,將置換後之液體導入至流路L。依此,即使在輔助泵62內也被供給置換後的液體。Next, in step S14, the
當朝輔助泵62內供給置換後之液體時,在泵浦內流路622內首先混合置換前之液體和置換後之液體。而且,當置換後的液體被導入時,在泵浦內流路622內的置換後之液體之比例緩緩地變高,最終被置換成置換後的液體。此時,因藉由先將加壓部621所致的加壓縮小成泵浦內流路622可以自由變形的程度,在將泵浦內流路622內之容積確保成較大之狀態下進行液體的置換,故能有效率地進行在泵浦內流路622內的液體之置換。When the substituted liquid is supplied into the
圖9(a)及圖9(b)係示意性地表示液體之移動的狀態,作為有無泵浦內流路622變形所致的液體之置換的狀態的圖。即使在圖9中,也示意性地表示隔膜部622a之變形所致的泵浦內流路622之容積的變化。圖9(a)係如上述般表示不藉由加壓部621加壓泵浦內流路622之狀態。此情況,因在泵浦內流路622內存在置換前之液體F,故泵浦內流路622形成容積大的狀態。當在該狀態,導入另外種類的液體(置換後的液體)時,如圖中所示之箭號般,在泵浦內流路622之中心部及外周部會發生液體容易混合的亂流。其結果,成為容易在泵浦內流路622內進行液體的混合及置換。另一方面,圖9(b)係表示在藉由加壓部621限制泵浦內流路622之變形的狀態,進行液體之置換之情況的例。在此情況,從在泵浦內流路622內存在置換前之液體F的階段,成為泵浦內流路622之容積小的狀態。當在該狀態,導入另外種類的液體(置換後的液體)時,如圖中所示之箭號般,在泵浦內流路622之中心部及外周部,被導入的液體容易快速地流向下游側。即是,因成為在泵浦內流路622內難發生液體的混合的狀況,故成為難進行液體的置換的狀態。如此一來,在液體彼此之置換的情況,認為藉由在泵浦內流路622內形成於液體之流動產生亂流的狀態,內部之液體的置換更適當地進行。9( a ) and FIG. 9( b ) are diagrams schematically showing the state of movement of the liquid as the state of liquid replacement due to the deformation of the pump
[作用]
在上述處理液供給裝置及液置換方法中,藉由作為控制部的控制裝置100所致的控制,排出作為隔膜泵的輔助泵62內的液體而置換成氣體。此時,作為控制部的控制裝置100係控制成與擴大之狀態相比,輔助泵62中之隔膜部622a處於收縮之狀態。而且,藉由控制裝置100所致的控制,一面維持上述狀態,一面對輔助泵62內供給氣體。藉由設為如此的構成,於將作為隔膜泵的輔助泵62內之液體置換成氣體之時,防止液體殘留在泵浦內之情形。因此,適當地進行從隔膜泵之流路內之液體置換成氣體。
[effect]
In the processing liquid supply apparatus and the liquid replacement method described above, the liquid in the
在此,作為控制部的控制裝置100係將作為隔膜泵的輔助泵62內的液體置換成另外種類的液體之時,實行一面維持隔膜部622a能擴大的狀態,一面對輔助泵62內供給另外種類的液體。藉由設為上述構成,於將輔助泵62內之液體置換成另外種類的液體之時,促進置換前的液體,和另外種類之液體在泵浦內混合。因此,作為隔膜泵之輔助泵62之流路內之液體置換成另外種類之液體適當地被進行。Here, when the
再者,藉由作為控制部的控制裝置100控制在作為隔膜泵的輔助泵62中藉由加壓部621加壓隔膜部622a的壓力,可以設為控制隔膜部622a之形狀的態樣。在此情況,可以利用加壓部621所致的加壓,柔軟地進行隔膜部622a之形狀的控制。Furthermore, by controlling the pressure of the
再者,作為控制部的控制裝置100即使於排出作為隔膜泵的輔助泵62內的液體之時,增大加壓部621所致的隔膜部622a的壓力亦可。再者,即使藉由如此的動作,維持供給氣體之時隔膜部622a收縮的狀態亦可。藉由設為上述構成,即使在增大對泵浦內供給的氣體之流速之情況,亦可以維持隔膜部622a收縮之狀態,適當地進行從作為隔膜泵之輔助泵62之流路內之液體置換成氣體。In addition, the
另外,即使作為氣體供給部而揮發功能的氣體供給源82及氣體供給路R82、R83與作為從處理液供給源50而來的氣體供給系統而被使用的氣體供給源81及氣體供給路R81另外地被設置亦可。再者,即使氣體供給源82及氣體供給路R82、R83在較作為隔膜泵之輔助泵62更上游對流路L內供給氣體亦可。藉由設為與從處理液供給源而來的氣體供給系統另外設置氣體供給部,對較隔膜泵更上游的流路L供給氣體的構成,可以與處理液供給源周圍的氣體供給系統獨立地進行隔膜泵內之液體的置換。再者,若藉由上述構成時,能防止氣體供給部之動作對氣體供給系統造成影響。In addition, even if the
以上,雖然針對各種例示實施型態予以說明,但是不限定於上述例示性實施型態,即使進行各種省略、置換及變更亦可。再者,能夠組合不同實施型態中的要素而形成其他實施型態。In the above, although various exemplary embodiments have been described, it is not limited to the above-mentioned exemplary embodiments, and various omissions, substitutions, and changes are possible. Furthermore, elements in different implementation forms can be combined to form other implementation forms.
例如,能適當變更處理液供給源50和噴嘴41之間之流路L的構成。作為一例,在上述實施型態中,針對從處理液供給源50對一個噴嘴41供給處理液,對工件W供給的構成予以說明。但是,實際上,能對一個處理液供給源50連接複數噴嘴41,流路L在途中分歧而對各噴嘴41供給處理液。因此,流路L之構成能因應從處理液供給源50供給處理液的噴嘴41之數量而變更。再者,即使針對包含泵浦流路系統70的送液系統60之構成亦能適當變更。即使在送液系統60之構成變更之情況,於在其流路L上設置隔膜泵之情況,亦可以適用上述構成。For example, the configuration of the flow path L between the processing
再者,在上述實施型態中,針對在作為隔膜泵之輔助泵62中,使用壓縮空氣G1而加壓泵浦內流路622之構成予以說明。但是,即使隔膜泵以與使用壓縮空氣的所謂空氣驅動不同的方式使隔膜動作亦可。例如,可以使用油壓式驅動、馬達直動式驅動等的眾知手法。In addition, in the above-mentioned embodiment, the structure in which the
從上述說明,應能理解出於說明之目的,在本說明書中說明本揭示的各種實施型態,在不脫離本揭示的範圍和要旨的情況下可以進行各種變更。因此,本說明書所揭示的各種實施型態並無意圖性地加以限定,實質的範圍和要旨藉由所附的申請專利範圍表示。From the above description, it should be understood that various embodiments of the present disclosure are described in the present specification for the purpose of illustration, and that various changes can be made without departing from the scope and gist of the present disclosure. Therefore, the various implementation forms disclosed in this specification are not intended to be limited, and the essential scope and gist are indicated by the appended claims.
1:基板處理系統
20:旋轉保持部
21:保持部
22:驅動部
30:處理液供給部
40:吐出部
41:噴嘴
42:送液管
50:處理液供給源
60:送液系統
61:中間槽
62:輔助泵
70:泵浦流路系統
80:氣體供給系統
81,82:氣體供給源
100:控制裝置
621:加壓部
622:泵浦內流路
622a:隔膜部
R81~83:氣體供給路
1: Substrate processing system
20: Rotation holding part
21: Keeping Department
22: Drive Department
30: Treatment liquid supply part
40: spit out part
41: Nozzle
42: liquid delivery pipe
50: Treatment liquid supply source
60: Liquid delivery system
61: middle slot
62: Auxiliary pump
70: Pump flow system
80:
40:吐出部 40: spit out part
41:噴嘴 41: Nozzle
42:送液管 42: liquid delivery pipe
50:處理液供給源 50: Treatment liquid supply source
60:送液系統 60: Liquid delivery system
61:中間槽 61: middle slot
61a:排出管 61a: discharge pipe
62:輔助泵 62: Auxiliary pump
621:加壓部 621: pressurized part
622:泵浦內流路 622: Pump internal flow path
622a:隔膜部 622a: Diaphragm
70:泵浦流路系統 70: Pump flow system
71:泵浦 71: pump
711:加壓部 711: pressurized part
712:泵浦內流路 712: Pump internal flow path
712a:隔膜部 712a: Diaphragm
72:捕集部 72: capture department
73:過濾器部 73:Filter department
80:氣體供給系統 80: Gas supply system
81,82:氣體供給源 81,82: Gas supply source
100:控制裝置 100: Control device
101:泵浦控制部 101: Pump Control Department
102:氣體供給控制部 102: Gas supply control department
103:液體供給控制部 103: Liquid supply control department
104:動作指令保持部 104: Action command holding unit
G1:壓縮空氣 G1: compressed air
G2:壓縮空氣 G2: compressed air
L1:流路 L1: flow path
L71:流路 L71: flow path
L72:旁通路 L72: bypass channel
L73:排出路 L73: Discharge path
R81~83:氣體供給路 R81~83: gas supply path
V1:閥體 V1: valve body
V2:分配閥 V2: distribution valve
V3:閥體 V3: valve body
V61,V62:閥體 V61, V62: valve body
V70:閥體 V70: valve body
V71:閥體 V71: valve body
V72:閥體 V72: valve body
V73:閥體 V73: valve body
V75:閥體 V75: valve body
V81~83:閥體 V81~83: valve body
Claims (11)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2021-075086 | 2021-04-27 | ||
JP2021075086A JP2022169207A (en) | 2021-04-27 | 2021-04-27 | Process liquid supply device, liquid replacement method, and storage medium |
Publications (1)
Publication Number | Publication Date |
---|---|
TW202308759A true TW202308759A (en) | 2023-03-01 |
Family
ID=83698175
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW111113996A TW202308759A (en) | 2021-04-27 | 2022-04-13 | Processing liquid supply apparatus, liquid replacement method, and storage medium |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP2022169207A (en) |
KR (1) | KR20220147524A (en) |
CN (1) | CN115249627A (en) |
TW (1) | TW202308759A (en) |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6330624B2 (en) | 2014-11-04 | 2018-05-30 | 東京エレクトロン株式会社 | Processing liquid supply device and cleaning method of processing liquid supply device |
-
2021
- 2021-04-27 JP JP2021075086A patent/JP2022169207A/en active Pending
-
2022
- 2022-04-13 TW TW111113996A patent/TW202308759A/en unknown
- 2022-04-20 CN CN202210414789.XA patent/CN115249627A/en active Pending
- 2022-04-25 KR KR1020220050910A patent/KR20220147524A/en unknown
Also Published As
Publication number | Publication date |
---|---|
JP2022169207A (en) | 2022-11-09 |
CN115249627A (en) | 2022-10-28 |
KR20220147524A (en) | 2022-11-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8216390B2 (en) | Cleaning and drying-preventing method, and cleaning and drying-preventing apparatus | |
US7393566B2 (en) | Substrate treatment method and substrate treatment apparatus | |
US8398320B2 (en) | Non-transitory storage medium for rinsing or developing sequence | |
KR0167481B1 (en) | Method and apparatus for processing substrate | |
JP2006216794A (en) | Cleaning, application and development device, and cleaning method | |
US10121685B2 (en) | Treatment solution supply method, non-transitory computer-readable storage medium, and treatment solution supply apparatus | |
JP5018255B2 (en) | Chemical supply system, chemical supply method, and storage medium | |
JP2006080404A (en) | Application/developing device, exposure device and resist pattern forming method | |
JP3189821U (en) | Treatment liquid supply piping circuit | |
JP2003347205A (en) | Mechanism and method for supplying treatment liquid | |
TW202308759A (en) | Processing liquid supply apparatus, liquid replacement method, and storage medium | |
JP2010171295A (en) | Out-of-liquid control method in process liquid supply system | |
JP4024639B2 (en) | Chemical liquid pump, piping system, substrate processing unit, substrate processing apparatus, chemical liquid discharging method, liquid distribution method, and substrate processing method | |
JP3760131B2 (en) | Processing method | |
JP6318012B2 (en) | Substrate processing method | |
JP6244324B2 (en) | Substrate processing apparatus and substrate processing method | |
JP2010141162A (en) | Method of processing substrate, program, computer storage medium and substrate processing system | |
JP3002942B2 (en) | Processing method and processing apparatus | |
KR20240077077A (en) | Liquid supllying apparatus and substrate treating apparatus including the same | |
JP4191421B2 (en) | Substrate processing apparatus and substrate processing method | |
JP7274356B2 (en) | LIQUID PROCESSING APPARATUS, LIQUID PROCESSING METHOD AND STORAGE MEDIA | |
JP7202817B2 (en) | Liquid delivery system | |
WO2022014329A1 (en) | Liquid treatment device, liquid supply mechanism, liquid treatment method, and computer storage medium | |
US20240178010A1 (en) | Liquid supply apparatus and substrate treatment apparatus including the same | |
KR20240030864A (en) | Control method for substrate processing apparatus and substrate processing method |