TW202306103A - Light-emitting diode device with common electrode and packaging structure thereof comprising a substrate, a plurality of light-emitting diode units, a plurality of electrode units, and a wavelength conversion unit, and is convenient for connecting an electrical component - Google Patents

Abstract

A light-emitting diode device with a common electrode is a common cathode electrode structure, comprising a substrate, a plurality of light-emitting diode units, a plurality of electrode units, and a wavelength conversion unit. Each light-emitting diode unit includes a plurality of light-emitting sources and an epitaxial support structure, each having an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer formed upwardly in sequence from the substrate. The epitaxial support structure has a groove. Each electrode unit has a plurality of p-type electrodes correspondingly arranged on the p-type semiconductor layer of the light emitting source, and at least one common N electrode extending from the n-type semiconductor layer of the light-emitting diode unit to the top surface of the epitaxial support structure. The wavelength conversion unit is arranged on the other side of the substrate and is used for converting the wavelength of the light emitted by the light emitting source. In addition, the present application also provides a light-emitting diode device with a common anode structure.

Description

Light-emitting diode device with common electrode and packaging structure thereof

The present invention relates to a light-emitting diode device and its package structure, in particular to a light-emitting diode device with a common electrode structure and its package structure.

Light-emitting diodes are often used in display panels due to their advantages of small size and high brightness. With the development of the industry, people have higher and higher requirements for display image quality such as pixels, color brightness, etc., and the light-emitting diodes are gradually developing in the direction of shrinking the grain size and increasing the number of grains per unit area. However, in the case of increasing the number of crystal grains of the light-emitting diode, the development of size reduction still has its limit. This reduces the number of pins for external electrical connection of the die, which can further reduce the volume of the LED in the case of a plurality of dies.

However, in the common cathode or common anode light-emitting diode structure, because many crystal grains are connected to the same common electrode in parallel, it is easy to have different heights of the joints of the respective crystal grains, which is not conducive to connecting the same common electrode. electrode, and stress is easily generated at the joint between the common electrode and the substrate. Therefore, subsequent application is likely to cause peeling problems due to poor adhesion between the common electrode and the substrate.

Therefore, the purpose of the present invention is to provide a light-emitting diode device with a common electrode, which is beneficial to bonding with an electronic component and increases the adhesion with the electronic component.

Therefore, the light-emitting diode device with the common electrode of the present invention includes a substrate, a plurality of light-emitting diode units, a plurality of electrode units, and a wavelength conversion unit.

The substrate is transparent.

The light-emitting diode units are formed on one of the surfaces of the substrate, and each light-emitting diode unit includes an n-type semiconductor layer sequentially upward from the surface of the substrate, and a plurality of intervals are formed on the n-type semiconductor layer A light-emitting layer on the surface, a central light-emitting layer surrounded by the light-emitting layers, and a plurality of p-type semiconductor layers correspondingly formed on the surface of the light-emitting layers and the center light-emitting layer, the n-type semiconductor layer and each layer of light-emitting layer and the corresponding p-type semiconductor layer formed on each light-emitting layer jointly define a light-emitting source, and the n-type semiconductor layer together with the central light-emitting layer and the p-type semiconductor layer formed on the central light-emitting layer jointly define a A supporting epitaxial structure, and the supporting epitaxial structure has a groove formed downward from the p-type semiconductor layer.

The electrode units are arranged corresponding to each light-emitting diode unit, and each electrode unit has a plurality of p-type electrodes corresponding to the surface of the p-type semiconductor layer of each light source, and at least one from the surface of the n-type semiconductor layer and The common N-type electrodes extending along the peripheral surface of the supporting epitaxial structure to the top surface of the supporting epitaxial layer, and the at least one common N-type electrode is connected to each other at the position of the top surface of the supporting epitaxial structure.

The wavelength conversion unit is arranged on the other surface of the substrate opposite to the light-emitting diode units, and has a plurality of wavelength conversion members respectively facing the light-emitting layers of the light-emitting diode units. The components are used to convert the excitation light emitted by the corresponding light-emitting layers into different wavelengths.

In addition, another object of the present invention is to provide a light-emitting diode device with a common electrode, which facilitates bonding with an electronic component and increases the adhesion with the electronic component.

Therefore, the light-emitting diode device with a common electrode of the present invention includes a substrate, a plurality of light-emitting diode units, a plurality of electrode units, a plurality of insulating support units, and a wavelength conversion unit.

The substrate is transparent.

The light-emitting diode units are formed on one surface of the substrate, and each light-emitting diode unit has a plurality of light-emitting diodes spaced apart from each other, and a supporting epitome surrounded by the light-emitting diodes Each of the light emitting diodes and the supporting epitaxial structure has an n-type semiconductor layer upward from the surface of the substrate, a light emitting layer formed on the surface of the n-type semiconductor layer, and a The p-type semiconductor layer on the light-emitting layer, wherein the supporting epitaxial structure has a groove formed downward from the p-type semiconductor layer to expose the n-type semiconductor layer, and each light-emitting diode is a light-emitting source , and the light-emitting layer of each light-emitting diode is formed on a part of the surface of the n-type semiconductor layer so that the n-type semiconductor layer is exposed, and the exposed parts of the n-type semiconductor layer of the light-emitting diode units are far away from each other .

The electrode units are set corresponding to each light-emitting diode unit, and each electrode unit has a plurality of N-type electrodes respectively arranged on the surface of the n-type semiconductor layer of each light-emitting diode, and a plurality of electrodes from each light-emitting diode. The p-type semiconductor layer of a light-emitting diode extends to the common p-type electrodes on the top surface of the supporting epitaxial structure, and the common p-type electrodes are connected to each other at the top surface of the supporting epitaxial structure.

The wavelength conversion unit is arranged on the other surface of the substrate opposite to the light-emitting diode units, and has a plurality of wavelength conversion parts respectively arranged on the light-emitting diode units, and the wavelength conversion parts are used for In order to convert the excitation light emitted by the corresponding light-emitting diode units into different wavelengths.

Furthermore, another object of the present invention is to provide a light emitting diode packaging structure with a common electrode.

Therefore, the light emitting diode package structure with the common electrode of the present invention includes a light emitting diode device with the common electrode as mentioned above, and a circuit board.

The LED device has a common N-type electrode and a plurality of P-type electrodes.

The circuit board has a circuit structure and is electrically connected to the P-type electrodes and the common N-type electrode through a plurality of solder balls.

Furthermore, another object of the present invention is to provide a light emitting diode package with a common electrode.

Therefore, the light emitting diode package structure with the common electrode of the present invention includes a light emitting diode device with the common electrode as mentioned above, and a circuit board.

The light emitting diode device has a plurality of common P-type electrodes and a plurality of N-type electrodes.

The circuit board has a circuit structure and is electrically connected to the N-type electrodes and the common P-type electrodes through a plurality of solder balls.

The effect of the present invention is that the electrode unit can be located at the same height or at a position close to the height through the supporting epitaxial structure, which is beneficial to the connection with the external electronic components. In addition, when electrically connected to the outside through the solder, The grooves formed in the supporting epitaxial structure can be further filled with solder or adhesive to improve the adhesion between the light emitting diode device and external electronic components.

The relevant technical contents, features and effects of the present invention will be clearly presented in the following detailed description of the embodiments with reference to the drawings. In addition, it should be noted that the drawings of the present invention only represent the structure and/or relative positional relationship between components, and are not related to the actual size of each component.

Referring to Fig. 1, Fig. 2 and Fig. 3, a first embodiment of the light emitting diode device 2 having a common electrode of the present invention is illustrated by taking the light emitting diode device 2 having a common cathode as an example, the light emitting diode The device 2 includes a substrate 21 , a plurality of LED units 22 , a plurality of electrode units 23 , an insulation unit 24 , a wavelength conversion unit 25 , and a protection layer 26 .

The substrate 21 is light-transmissive, and defines a plurality of light-emitting regions 211 on the surface of the substrate 21 , and a non-light-emitting region 212 that surrounds the light-emitting regions 211 and separates them from each other.

The light emitting diode units 22 are formed on one surface of the substrate 21 (see FIG. 1 ) in an array arrangement, and only one of the light emitting diode units 22 is shown in FIGS. 2 and 3 . 3, each light emitting diode unit 22 includes an n-type semiconductor layer 221 upwards from the surface of the substrate 21, a plurality of light emitting layers 222a formed on the surface of the n-type semiconductor layer 221 at intervals, a bit by A central light emitting layer 222b surrounded by the light emitting layers 222a, and a plurality of p-type semiconductor layers 223 correspondingly formed on the surfaces of the light emitting layers 222a and the center light emitting layer 222b.

Wherein, the n-type semiconductor layer 221 and each light-emitting layer 222 a and the p-type semiconductor layer 223 formed on the light-emitting layer 222 a jointly define a light-emitting source 220 . The n-type semiconductor layer 221, the central light-emitting layer 222b and the corresponding p-type semiconductor layer 223 formed on the central light-emitting layer 222b jointly define a supporting epitaxial structure 224 having the same height as the light-emitting sources 220 (see FIG. 3). The supporting epitaxial structure 224 has a barrier wall 2241 extending downward from the corresponding top surface of the p-type semiconductor layer 223 to the n-type semiconductor layer 221 to define a groove for exposing the n-type semiconductor layer 221 225.

In some embodiments, the barrier wall 2241 can also extend downward from the corresponding p-type semiconductor layer 223 to the substrate 21 , so that the substrate 21 is exposed through the groove 225 . Since the related materials and detailed film structure of the light emitting diode units 22 are well known in the technical field, and are not the focus of this case, no more details are given here.

In this embodiment, the light emitting sources 220 are respectively formed in alignment with the light emitting regions 211, so that the excitation light energy emitted by the light emitting sources 220 after the light emitting diode units 22 are flip-chip packaged Light is emitted from the light emitting regions 211 respectively.

Each light emitting diode unit 22 can have at least three light emitting sources 220 so that each light emitting diode unit 22 can emit at least three colors of red, blue, and green light, so that full-color display can be performed by using these colors of light. In this embodiment, it is taken that each light emitting diode unit 22 has four light emitting layers 222a arranged at intervals on the surface of the n-type semiconductor layer 221 as an example, therefore, each light emitting diode unit 22 will include Four light emitting sources 220 are arranged at intervals of 2×2 and correspondingly disposed in the light emitting regions 211 . In addition, it should be noted that in this embodiment, the light emitting sources 220 all emit blue light of the same wavelength as an example, but in actual implementation, the number, arrangement, or light emitting wavelength of the light emitting sources 220 are not the same. This is the limit.

The electrode units 23 are arranged corresponding to each light emitting diode unit 22 . Each electrode unit 23 has a plurality of p-type electrodes 231 correspondingly arranged on the surface of the p-type semiconductor layer 223 of each light emitting source 220, and at least one from the surface of the n-type semiconductor layer 221 and along the supporting epitaxial structure 224 The peripheral surface extends to the common N-type electrode 232 on the top surface of the supporting epitaxial structure 224 , and the at least one common N-type electrode 232 is correspondingly disposed in the non-light emitting region 212 . In this embodiment, each electrode unit 23 has four P-type electrodes 231 correspondingly disposed on the surface of each p-type semiconductor layer 223 and a plurality of common N-type electrodes 232 (see FIG. 2 ). The common N-type electrodes 232 extend from the surface of the n-type semiconductor layer 221 between the light emitting sources 220 to the top surface of the supporting epitaxial structure 224, and are connected to each other on the top surface of the supporting epitaxial structure 224, and Further extending downward from the top surface of the supporting epitaxial structure 224 along the epitaxial wall surface 2241 and covering the n-type semiconductor layer 221 exposed from the groove 225 .

It should be noted that, in some embodiments, the common N-type electrodes 232 may also only extend to the top surface of the supporting epitaxial structure 224, or only extend to cover the epitaxial wall surface 2241 without covering itself. The surface of the n-type semiconductor layer 221 is exposed at the bottom of the groove 225 . As long as the common N-type electrodes 232 can have a bonding portion on the top surface of the supporting epitaxial structure 224 and be at the same height as the P-type electrodes 231 .

In addition, it should be further explained that no matter whether the common N-type electrodes 232 have epitaxial wall surfaces 2241 extending to the grooves 225, the grooves 225 will not be filled up, and the grooves 225 can maintain a constant state. The space available to accommodate solder.

The present invention utilizes the supporting epitaxial structure 224 as the supporting structure of the common N-type electrodes 232, so that the common N-type electrodes 232 can be located at the same height as the P-type electrodes 231, and there are more advantages in subsequent applications. It is helpful for external electrical connection, and when joining other electronic components, solder can also be used to fill the groove 225 of the supporting epitaxial structure 224 to increase the adhesion of the joint. In addition, the common N-type electrodes 232 are disposed between the light-emitting diode units 22 and connected to the top surface of the supporting epitaxial structure 224, which can be regarded as a hollow structure. The hollow structure can be used as a space for stress buffering, so that the light-emitting diode device 2 can be placed between the common N-type electrode 232 and the substrate 21 during the manufacturing process or when it is subsequently arranged on the display element. The stress generated at the junction between the electrode 232 and other external packaging components can be released through the hollow structure, so as to prevent the common N-type electrode 232 from peeling off, or the light-emitting sources 220 connected to the common N-type electrode 232 , peeled off or damaged due to force. Preferably, the common N-type electrodes 232 are symmetrically and evenly spaced on the n-type semiconductor layer 221 as shown in FIG. Evenly distributed.

The insulating unit 24 is disposed on at least part of the peripheral surface of the supporting epitaxial structure 224 and has a plurality of insulating coating layers 241 . The insulating coating layers 241 cover at least part of the peripheral surface of the supporting epitaxial structure 224 and the epitaxial wall surface 2241 , so as to insulate and isolate the common N-type electrodes 232 from the peripheral surface of the supporting epitaxial structure 224 . The insulating unit 24 can be selected from insulating materials such as oxides or nitrides, and can be formed by deposition or sputtering. Since the selection and manufacturing methods of these insulating materials are known in the art, further description will be given here.

The wavelength conversion unit 25 is disposed on the other surface of the substrate 21 opposite to the light emitting diode units 22 , and has a plurality of wavelength conversion elements 251 , a light shielding layer 252 , and a plurality of filter elements 253 . The wavelength conversion elements 251 are respectively arranged at the positions of the light emitting sources 220 (that is, the light emitting layers 222a) of the corresponding light emitting diode unit 22, and are used to convert the corresponding light emitting sources 220 The excitation light is converted to a different wavelength. Wherein, the wavelength conversion elements 251 can be selected from applicable fluorescent materials or quantum dots of different sizes and types depending on the wavelength to be converted. Since the selection of the relevant materials of these fluorescent materials and quantum dots is determined by this technology Know, therefore, no more details.

In this embodiment, the arrangement of the wavelength converting elements 251 corresponding to the four light emitting sources 220 of each light emitting diode unit 22 is to set a position corresponding to one of the light emitting sources 220 so that the light emitting source can 220 to convert the light emitted by the light source 220 into a wavelength conversion member 251 of green light, corresponding to the positions of two of the light emitting sources 220, the wavelength conversion member 251 that can convert the light emitted by the two light emitting sources 220 into red light, and in the fourth The position of the light emitting source 220 is provided with a penetrating member (not shown) that does not affect the wavelength of the emitted light, so that the light emitted by the corresponding light emitting source 220 can pass through without changing the wavelength. Taking the light-emitting sources 220 all emitting blue light of the same wavelength as an example, the light-emitting sources 220 emit light from the corresponding light-emitting area 211 through the substrate 21, and convert the blue light into green light through the corresponding wavelength conversion elements 251. Therefore, the light emitted by each light-emitting diode unit 22 can emit three colors of blue light, green light and red light after passing through the wavelength conversion unit 25 .

In some embodiments, the light emitting sources 220 can also emit ultraviolet light of the same wavelength. At this time, the ultraviolet light can be converted into green light, red light, and blue light by the corresponding wavelength conversion elements 251, so that The light emitted by each light emitting diode unit 22 can emit three colors of blue light, green light and red light after passing through the wavelength conversion unit 25 .

The optical filters 253 are respectively formed in alignment with the wavelength converting members 251 and the light-transmitting member on the side opposite to the substrate 21, and can be used to filter specific wavelengths of light emitted by the corresponding wavelength converting members 251 of light. In detail, the light emitted by the light emitting sources 220 will be converted into the color light of a specific wavelength through the corresponding wavelength conversion member 251 or the light-transmitting member. However, in order to avoid that the light emitting sources 220 are not The light of the wavelength converted by 251 is also emitted to the outside at the same time, and affects the light color of the light. Therefore, by setting the filter 253 on the wavelength conversion member 251 to filter out the light emitted from the light source 220 and not received by the wavelength conversion member 251 Converting the wavelength of the light (for example: filtering the wavelength of the non-visible light range) to further ensure that the light color emitted by the light emitting diode device 2 can be more in line with expectations.

In some embodiments, the optical filters 253 may not be provided according to requirements, as long as the wavelength conversion unit 25 can use the wavelength conversion components 251 to convert the wavelength of light as much as possible.

The light-shielding layer 252 is disposed corresponding to the position of the non-light-exiting region 212 to frame the wavelength converting elements 251 , the penetrating element and the corresponding filter elements 253 to make them spaced apart from each other. The light-shielding layer 252 is made of non-transparent material, such as black photoresist material (black matrix) or black ink, and can be formed by lithography, screen printing, spraying, etc. The surface is used to provide a shading effect to prevent the colored lights emitted by the light sources 220 from interfering with each other.

The protective layer 26 is transparent, and can be coated on the light-shielding layer 252 and the wavelength conversion elements 251 by coating or deposition to provide protection.

Referring to FIG. 4 and FIG. 5, a second embodiment of the light-emitting diode device with a common electrode of the present invention is different from the first embodiment in that the light-emitting diode device 3 of the second embodiment is a common anode structure.

The light emitting diode device 3 includes a substrate 31 , a plurality of light emitting diode units 32 , a plurality of electrode units 33 , an insulating unit 34 , a wavelength conversion unit 35 , and a protection layer 36 . Wherein, the structure of the substrate 31, the wavelength conversion unit 35 (including the wavelength conversion element 351, the light shielding layer 352, and the filter element 353) and the protective layer 36 is the same as that of the substrate 21 of the first embodiment (refer to FIG. 3 ). 1. The structure and material of the wavelength conversion unit 25 and the protection layer 26 are the same, so no further description is given here.

The light-emitting diode units 32 are formed on one surface of the substrate 31, and each light-emitting diode unit 32 has a plurality of light-emitting diodes 320 spaced from each other and correspondingly arranged in the light-emitting region 311 of the substrate 31. , and a supporting epitaxial structure 324 surrounded by the light emitting diodes 320, and each light emitting diode 320 is a light source. Each of the light emitting diodes 320 has an n-type semiconductor layer 321 upward from the surface of the substrate 31, a light emitting diode formed on a part of the surface of the n-type semiconductor layer 321 and partially exposed to the n-type semiconductor layer 321. Layer 322, and a p-type semiconductor layer 323 disposed on the light-emitting layer 322, and the exposed parts of the n-type semiconductor layer 321 of the light-emitting diodes 320 are far away from each other. The supporting epitaxial structure 324 is correspondingly formed on the non-light emitting region 312 of the substrate 31, and also has the n-type semiconductor layer 321 upward from the surface of the substrate 31, and the light emitting layer formed on the surface of the n-type semiconductor layer 321. layer 322, and the p-type semiconductor layer 323 disposed on the light-emitting layer 322, and can have the same height as the light-emitting diodes 320, the difference is that the supporting epitaxial structure 324 has a Layer 323 forms the groove 315 downwards, the depth of the groove 315 can be to expose the n-type semiconductor layer 321 or to expose the surface of the substrate 2. In this embodiment, the groove The depth of 312 can expose the n-type semiconductor layer 321 as an example.

Each light-emitting diode unit 32 can have at least three light-emitting diodes 320, so that each light-emitting diode unit 32 can at least emit three colors of red, blue, and green, so that the full range of light-emitting diodes can be realized by using these colors. color display. In this second embodiment, each light emitting diode unit 32 includes four light emitting diodes 320 arranged at intervals in the form of 2×2, that is, each light emitting diode unit 32 has four light emitting sources 320 (see Figure 4), and the light emitting diodes 320 (light sources) all emit blue light of the same wavelength as an example, but in actual implementation, the number, arrangement or light emitting wavelength of the light emitting diodes 320, etc. It is not limited to this.

The electrode units 33 are arranged corresponding to each light emitting diode unit 32 . And in this embodiment, each electrode unit 33 has four N-type electrodes 331 respectively arranged on the surface of the exposed n-type semiconductor layer 321 of each light-emitting source (light-emitting diode) 320, and a plurality of The common P-type electrode 332 is used to connect the p-type semiconductor layers 323 of the light emitting diodes 320 at the same time. Wherein, the common P-type electrodes 332 respectively extend from the p-type semiconductor layer 323 of each light-emitting diode 320 along the peripheral surface of the light-emitting diode 320 , and then extend to the supporting epitaxial structure 324 via the surface of the substrate 3 the top surface and are connected to each other on the top surface. The supporting epitaxial structure 324 connects the common P-type electrodes 332 so that the common P-type electrodes 332 and the N-type electrodes 331 can be located at similar heights, which facilitates external connection to other electronic components. In this embodiment, the common P-type electrodes 332 further extend from the top surface of the supporting epitaxial structure 324 to cover the epitaxial wall surface 3241 and the surface of the n-type semiconductor layer 321 exposed from the groove 325 (see Figure 5). It should be noted that, when the common P-type electrodes 332 extend to the groove 325 , they only cover the epitaxial wall surface 3241 and do not fill up the inner space of the groove 315 .

In some embodiments, the common P-type electrodes 332 can also only extend to the top surface of the supporting epitaxial structure 324 without extending to cover the epitaxial wall 3241, as long as the common P-type electrodes 332 can have The bonding portion located on the top surface of the supporting epitaxial structure 324 may be at a similar height or at the same height as the N-type electrodes 331 .

The insulating units 34 are made of insulating materials, have a plurality of insulating coating layers 341, and are respectively arranged on the light emitting diodes 320, at least the peripheral surface of the supporting epitaxial structure 324 and/or the epitaxial epitaxial structure 324. On the wall surface 3241 , the common P-type electrodes 332 are insulated from the surrounding surfaces of the light emitting diodes 320 and the supporting epitaxial structure 324 .

In addition, it should be further explained that the aforementioned first and second embodiments are described by taking each light emitting diode unit 22, 32 having a supporting epitaxial structure 224, 324 as an example. However, in actual implementation, it can also be seen that Design and requirements and set multiple supporting epitaxial structures 224, 324 in each light-emitting diode unit 22, 32, as long as it can be used for common electrodes (shared N-type electrodes 232 or shared P-type electrodes 332 ) can extend to the top surfaces of the supporting epitaxial structures 224 , 324 and be electrically connected to each other, and the number of the supporting epitaxial structures 224 , 324 is not particularly limited.

Since the electrode units 23, 33 of the light-emitting diode devices 2, 3 of this case are located at the same height or close to the height, it is helpful to join other electronic components. Referring to Fig. 6, Fig. 6 is the structure shown in Fig. 3 The light-emitting diode device 2 is bonded to a circuit board 4 with a circuit structure through a bonding unit 5 to obtain a light-emitting diode package structure with a common electrode as an example. The bonding unit 5 has a plurality of solder balls 51, The P-type electrodes 231 and the shared N-type electrodes 232 are respectively electrically connected to the circuit structure of the circuit board 4 through the solder balls 51 . Wherein, the part used to connect the common N-type electrode 232 and the solder ball 51 of the circuit board 4 will be filled in the groove 225, so as to improve the adhesion of surface soldering (Surface Mount Technology, SMT), and these The common N-type electrode 232 is partly disposed on the supporting epitaxial structure 224 and is at the same height as the P-type electrode 231 , which facilitates electrical connection with the circuit board 4 .

Referring to FIG. 7 , FIG. 7 is used to illustrate that the light emitting diode device 3 shown in FIG. 5 is bonded to the circuit board 4 through the solder balls 51 to form a light emitting diode package structure. Specifically, the N-type electrodes 331 and the common P-type electrodes 332 are electrically connected to the circuit structure of the circuit board 4 through the solder balls 51 . Wherein, the portion used to connect the common P-type electrodes 332 and the solder ball 51 of the circuit board 4 will be filled in the groove 325 to improve the adhesion of the surface soldering, and the common P-type electrodes 332 parts It is disposed on the supporting epitaxial structure 324 and is located at a position close to the height of the N-type electrode 331 , thus facilitating electrical connection with the circuit board 4 .

To sum up, the light-emitting diode devices 2 and 3 with a common electrode of the present invention make the electrode units 23 and 33 at the same height or at a similar height through the supporting epitaxial structure 224 and 324, which is beneficial to and through cooperation with The external electronic components are connected, and the grooves 225, 325 can be filled with solder or adhesive, so as to improve the adhesion between the light emitting diode devices 2, 3 and the external electronic components. In addition, the hollow structure of the common N-type electrode 232 or the common P-type electrode 332 can also release the stress pull from the joints at different positions, so that the light-emitting diode devices 2 and 3 can be used during the manufacturing process or It is to prevent the common N-type electrodes 232 or the common P-type electrodes 332 from peeling off or being damaged when they are subsequently arranged on display elements, so the purpose of the present invention can be achieved.

But the above-mentioned ones are only embodiments of the present invention, and should not limit the scope of the present invention. All simple equivalent changes and modifications made according to the patent scope of the present invention and the content of the patent specification are still within the scope of the present invention. Within the scope covered by the patent of the present invention.

2, 3: Light-emitting diode device 21, 31: Substrate 211, 311: light emitting area 212, 312: Non-light-emitting area 22, 32: light emitting diode unit 220, 320: light source 221, 321: n-type semiconductor layer 222a, 322: light emitting layer 222b: central light-emitting layer 223, 323: p-type semiconductor layer 224, 324: supporting epitaxial structure 2241, 3241: epitaxy wall 225, 325: Groove 23, 33: electrode unit 231: P-type electrode 232: Shared N-type electrode 331: N-type electrode 332: Common P-type electrode 24, 34: insulation unit 241, 341: insulating coating layer 25, 35: wavelength conversion unit 251, 351: wavelength conversion parts 252, 352: shading layer 253, 353: filter 26, 36: protective layer 4: Circuit board 5: Joining unit 51: Solder ball

Other features and effects of the present invention will be clearly presented in the implementation manner with reference to the drawings, wherein: FIG. 1 is a schematic plan view illustrating a first embodiment of the light-emitting diode device with a common electrode of the present invention; Fig. 2 is a schematic top view illustrating one of the light-emitting diode units of the first embodiment; Fig. 3 is a schematic cross-sectional view to assist in explaining the cross-sectional structure along the line III-III in Fig. 2; Fig. 4 is a top view Schematic diagram illustrating a second embodiment of the light-emitting diode device with a common electrode of the present invention; FIG. 5 is a schematic cross-sectional view to assist in explaining the cross-sectional structure along the V-V section line of FIG. 4; FIG. 6 is a cross-sectional view A schematic diagram illustrating that the light emitting diode device of the first embodiment is combined on a circuit board; and FIG. 7 is a schematic cross-sectional view illustrating that the light emitting diode device of the second embodiment is combined on a circuit board.

2: Light-emitting diode device

21: Substrate

211: light area

212: Non-light-emitting area

22: Light emitting diode unit

220: light source

221: n-type semiconductor layer

222a: light emitting layer

222b: central light-emitting layer

223: p-type semiconductor layer

224:Supporting epitaxial structure

2241: epitaxy wall

225: Groove

23: Electrode unit

231: P-type electrode

232: Shared N-type electrode

24: Insulation unit

241: insulation covering layer

25:Wavelength conversion unit

251:Wavelength conversion part

252: shading layer

253: Filter

26: Protective layer

Claims (17)

A light emitting diode device having a common electrode, comprising: A substrate, with light transmission; A plurality of light-emitting diode units are formed on one surface of the substrate, and each light-emitting diode unit includes an n-type semiconductor layer sequentially upward from the surface of the substrate, and a plurality of intervals are formed on the n-type semiconductor layer A light-emitting layer on the surface of the light-emitting layer, a central light-emitting layer surrounded by these light-emitting layers, and a plurality of p-type semiconductor layers correspondingly formed on the surface of the light-emitting layers and the center light-emitting layer, the n-type semiconductor layer and each layer of light-emitting layer and the corresponding p-type semiconductor layer formed on each light-emitting layer jointly define a light-emitting source, and the n-type semiconductor layer together with the central light-emitting layer and the p-type semiconductor layer formed on the central light-emitting layer jointly define a a supporting epitaxial structure, and the supporting epitaxial structure has a groove formed downward from the p-type semiconductor layer; A plurality of electrode units are arranged corresponding to each light-emitting diode unit, each electrode unit has a plurality of p-type electrodes corresponding to the surface of the p-type semiconductor layer of each light emitting source, and at least one electrode from the surface of the n-type semiconductor layer And extending along the peripheral surface of the supporting epitaxial structure to the common N-type electrode on the top surface of the supporting epitaxial layer, and the at least one common N-type electrode is connected to each other at the position of the top surface of the supporting epitaxial structure; and A wavelength conversion unit is arranged on the other surface of the substrate opposite to the light-emitting diode units, and has a plurality of wavelength conversion members respectively corresponding to the light-emitting layers of the light-emitting diode units, and the wavelength The conversion element is used for converting the excitation light emitted by the corresponding light-emitting layers into different wavelengths. The light-emitting diode device with a common electrode as described in claim 1, further comprising an insulating unit disposed on at least the peripheral surface of the supporting epitaxial structure, and the at least one common N-type electrode is connected to the at least one common N-type electrode by the insulating unit The surrounding surface of the supporting epitaxial structure is insulated and isolated. The light-emitting diode device with a common electrode as claimed in claim 2, wherein the groove is defined by an epitaxial wall, and the n-type semiconductor layer is exposed, and the insulating unit is disposed on the epitaxial wall surface, the at least one common N-type electrode also extends downward from the top surface of the supporting epitaxial structure along the epitaxial wall surface and covers the n-type semiconductor layer exposed from the groove, and the at least one common N-type electrode is borrowed The insulating unit is isolated from the epitaxial wall. The light-emitting diode device with a common electrode as claimed in claim 1, wherein each electrode unit has a plurality of common N-type electrodes, and the common N-type electrodes are obtained from an n-type semiconductor between the light-emitting sources Layer surfaces extend to the top surface of the supporting epitaxial structure and are connected to each other. The light-emitting diode device with a common electrode as claimed in claim 1, wherein the wavelength conversion unit further has a light-shielding layer for surrounding the wavelength conversion elements to make them spaced apart from each other. The light-emitting diode device with a common electrode as described in Claim 5, wherein the wavelength conversion unit further has a plurality of optical filters formed in alignment on the side of the wavelength conversion members opposite to the substrate, for The light emitted from the light emitting source and whose wavelength is not converted by the corresponding wavelength conversion element is filtered out. The light-emitting diode device with a common electrode as claimed in claim 1 further comprises a protection layer covering the wavelength conversion unit, and the protection layer is light-transmissive. The light-emitting diode device with a common electrode as described in claim 1, wherein the light-emitting sources emit blue light or ultraviolet light, and the wavelength conversion components can be used to convert the wavelength of the light emitted by the light-emitting sources, So that each light emitting diode unit can emit at least three kinds of colored light, blue light, green light and red light. A light emitting diode device having a common electrode, comprising: A substrate, with light transmission; A plurality of light-emitting diode units are formed on one surface of the substrate, and each light-emitting diode unit has a plurality of light-emitting diodes arranged at intervals from each other, and a support surrounded by the light-emitting diodes An epitaxial structure, each of the light emitting diodes and the supporting epitaxial structure has an n-type semiconductor layer upward from the surface of the substrate, a light-emitting layer formed on the surface of the n-type semiconductor layer, and a The p-type semiconductor layer on the light-emitting layer, wherein the supporting epitaxial structure has a groove formed downward from the p-type semiconductor layer to expose the n-type semiconductor layer, and each light-emitting diode is a light-emitting diode. source, and the light-emitting layer of each light-emitting diode is formed on a part of the surface of the n-type semiconductor layer so that the n-type semiconductor layer is exposed, and the exposed parts of the n-type semiconductor layer of the light-emitting diode units are mutually keep away; A plurality of electrode units are set corresponding to each light-emitting diode unit, and each electrode unit has a plurality of N-type electrodes respectively arranged on the surface of the n-type semiconductor layer of each light-emitting diode, and a plurality of self- The p-type semiconductor layer of each light-emitting diode extends to a common p-type electrode on the top surface of the supporting epitaxial structure, and the common p-type electrodes are connected to each other at the top surface of the supporting epitaxial structure; and A wavelength conversion unit, which is arranged on the other surface of the substrate opposite to the light-emitting diode units, and has a plurality of wavelength conversion elements respectively arranged on the light-emitting diode units, and the wavelength conversion elements It is used for converting the excitation light emitted by the corresponding light-emitting diode units into different wavelengths. The light-emitting diode device with a common electrode as described in claim 9 further has an insulating unit disposed on at least the peripheral surface of the light-emitting diodes and the supporting epitaxial structure, and the common P-type electrodes The insulating unit is isolated from the surrounding surfaces of the light emitting diodes and the supporting epitaxy structure. The light emitting diode device with a common electrode as claimed in claim 10, wherein the groove is defined by an epitaxial wall, and the insulating unit is further disposed on a surface of the epitaxial wall. The light-emitting diode device with a common electrode as claimed in Claim 9, wherein the conversion unit further has a light-shielding layer for surrounding the wavelength conversion elements so that they are separated from each other. The light-emitting diode device with a common electrode as claimed in claim 12, wherein the wavelength conversion unit further has a plurality of optical filters formed in alignment on the side of the wavelength conversion members opposite to the substrate, for The light emitted from the light emitting source and whose wavelength is not converted by the corresponding wavelength conversion element is filtered out. The light-emitting diode device with a common electrode as claimed in claim 9 further comprises a protection layer covering the wavelength conversion unit, and the protection layer has light transmission. The light-emitting diode device with a common electrode as described in Claim 9, wherein the light-emitting sources emit blue light or ultraviolet light, and the wavelength conversion components can be used to convert the wavelength of the light emitted by the light-emitting sources, So that each light emitting diode unit can emit at least three kinds of colored light, blue light, green light and red light. A light-emitting diode packaging structure with a common electrode, comprising: A light-emitting diode device as described in claim 1; and A circuit board has a circuit structure and is electrically connected to the P-type electrodes and the common N-type electrode through a plurality of solder balls. A light-emitting diode packaging structure with a common electrode, comprising: A light-emitting diode device as described in Claim 9; and A circuit board has a circuit structure and is electrically connected to the N-type electrodes and the common P-type electrodes through a plurality of solder balls.

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