TW202303666A - Apparatus and method for forming coating, component and plasma apparatus - Google Patents

Abstract

The invention discloses a device and a method for forming a coating, a part and a plasma device. The device for forming the coating comprises a vacuum cavity; a first target material and a second target material; the part body is arranged opposite to the first target material and the second target material; the first target material atoms and the second target material atoms form a composite corrosion-resistant coating on the surface of the part body; the first auxiliary monitor is used for monitoring a characteristic signal of the first target material; the second auxiliary monitor is used for monitoring a characteristic signal of a second target material; the rate monitor is used for monitoring the forming rate of the composite corrosion-resistant coating and feeding back a deviation signal to the first auxiliary monitor and the second auxiliary monitor when the forming rate deviates from a target rate; the first auxiliary monitor and the second auxiliary monitor independently control the rates of the target materials according to the intensity changes of the characteristic signals of the first target material and the second target material so as to control the stability of the forming rate of the composite corrosion-resistant coating. And the uniformity in the formed composite corrosion-resistant coating is relatively good.

Description

Apparatus and method for forming composite corrosion-resistant coating, component and plasma apparatus

The invention relates to the field of semiconductors, in particular to a device for forming a composite corrosion-resistant coating, a method for forming a composite corrosion-resistant coating on the surface of a component body, a semiconductor component and a plasma treatment device.

In the manufacturing process of semiconductor components, plasma etching is a key process for processing wafers into design patterns.

In a typical plasma etching process, a process gas (such as CF ₄ , O _{2 ,} etc.) is excited by a radio frequency (Radio Frequency, RF) to form a plasma. These plasmas undergo physical bombardment and chemical reactions with the wafer surface after the electric field (capacitive coupling or inductive coupling) between the upper electrode and the lower electrode, thereby etching a wafer with a specific structure.

Relatively high plasma corrosion resistance is required for components that are exposed to the harsh corrosive environment of a plasma etch chamber. For this reason, some patents propose to coat the surface of the internal parts of the plasma etching chamber with a corrosion-resistant coating such as a yttrium-containing coating to protect the workpiece and maintain the stability of the plasma etching environment. With the continuous progress of semiconductor high-end process (below 10nm), the plasma environment used in plasma etching process is more complex, and the yttrium-containing coating with a single oxide composition shows a trend towards optimization of composite yttrium-containing coatings. To meet the requirements of more harsh plasma etching environment for corrosion-resistant coatings.

However, for composite corrosion-resistant coatings, their own stability determines that they are easy to decompose, which makes it difficult to precisely control the uniformity of their composition during the process of synthesizing composite corrosion-resistant coatings. .

In response to the above requirements, how to accurately control the uniformity of each component of the composite corrosion-resistant coating, improve the stability of the corrosion-resistant coating, and further maintain the stability of the etching chamber environment has become an important issue for further improving the application of plasma etching in advanced processes. Direction of development.

The technical problem solved by the present invention is to provide a device for forming a composite corrosion-resistant coating, a method for forming a composite corrosion-resistant coating on the surface of a component body, a semiconductor component and a plasma treatment device to improve the corrosion-resistant coating. Uniformity of ingredients in layers.

In order to solve the above technical problems, the present invention provides a device for forming a composite corrosion-resistant coating, comprising: a vacuum chamber; a first target and a second target located in the vacuum chamber; a component body located in the In the vacuum cavity, it is set opposite to the first target material and the second target material; the first excitation device is used to excite the atoms of the first target material in the first target material; the second excitation device is used to excite the first target material atoms in the first target material; The second target atoms in the second target, the first target atoms and the second target atoms form a composite corrosion-resistant coating on the surface of the component body; the first auxiliary monitor is located in the vacuum chamber, for monitoring the characteristic signal of the first target; the second auxiliary monitor, located in the vacuum chamber, for monitoring the characteristic signal of the second target; the rate monitor, located in the vacuum chamber, It is used to monitor the formation rate of the composite corrosion-resistant coating. When the formation rate deviates from the target rate, the deviation signal is fed back to the first auxiliary monitor and the second auxiliary monitor. The first auxiliary monitor and the second auxiliary monitor The two auxiliary monitors independently control the speed of each target according to the strength and weakness of the characteristic signals of the first target and the second target, so as to control the stability of the formation rate of the composite corrosion-resistant coating and maintain the stability of each composite corrosion-resistant coating. The composition has high uniformity in the thickness direction.

Preferably, the characteristic signal is a spectral signal, and the spectral signal includes: the strongest peak intensity, spectral integrated area or characteristic wavelength optical power, and the first auxiliary monitor and the second auxiliary monitor are spectrometers.

Preferably, the characteristic signal is temperature, and the first auxiliary monitor and the second auxiliary monitor are infrared thermometers.

Preferably, the material of the composite anti-corrosion coating is a rare earth element oxyfluoride crystalline compound, and the rare earth element oxyfluoride crystalline compound includes: YOF, Y ₅ O ₄ F ₇ , Y ₆ O ₅ F ₈ , Y ₇ O ₆ F _9. Y ₁₇ O ₁₄ F ₂₃ , LaOF, CeOF, CeO ₆ F ₂ , PrOF, NdOF, SmOF, EuOF, Eu ₃ O ₂ F ₅ , Eu ₅ O ₄ F ₇ , GdOF, Gd ₅ O ₄ F ₇ , TbOF , DyOF, HoOF, ErOF, Er ₃ O ₂ F ₅ , Er ₅ O ₄ F ₇ , TmOF, YbOF, Yb ₅ O ₄ F ₇ , Yb ₆ O ₅ F ₈ , LuO, Lu ₃ O ₂ F ₅ , Lu ₅ At least one of O ₄ F ₇ or Lu ₇ O ₆ F ₉ .

Preferably, the material of the composite corrosion-resistant coating is a crystalline compound formed by rare earth elements and alumina, and the crystalline compounds formed by rare earth elements and alumina include: Y ₄ Al ₂ O ₉ , YAlO ₃ , Y ₃ Al ₅ O ₁₂ , LaAlO ₃ , CeAlO ₃ , Ce ₆ AlO ₃ , Pr ₄ Al ₂ O ₉ , PrAlO ₃ , PrAl ₁₁ O ₁₈ , Nd ₄ Al ₂ O ₉ , NdAlO ₃ , NdAl ₁₁ O ₁₈ , Sm ₄ Al ₂ O ₉ , SmAlO ₃ , Eu ₄ Al ₂ O ₉ , EuAlO ₃ , Eu _{3 Al 5} O ₁₂ , Gd ₄ Al 2 O ₉ , GdAlO ₃ , Gd ₃ Al ₅ O ₁₂ , Tb ₄ Al ₂ O ₉ , TbAlO ₃ , Tb ₃ Al ₅ O ₁₂ , Dy ₄ Al ₂ O ₉ , DyAlO ₃ , Dy ₃ Al ₅ O ₁₂ , Ho ₄ Al ₂ O ₉ , HoAlO ₃ , Ho ₃ Al ₅ O ₁₂ , Er ₄ Al ₂ O ₉ , ErAlO ₃ , Er ₃ Al ₅ O ₁₂ , Tm ₄ Al ₂ O ₉ , TmAlO ₃ , Tm ₃ Al 5 O 12 , _{Yb 4} Al ₂ O ₉ , Yb ₆ Al _{10 O 24} , Lu ₄ Al ₂ O ₉ , LuAlO ₃ or Lu ₃ Al ₅ At least one of O ₁₂ .

Preferably, the material of the composite corrosion-resistant coating is a crystalline compound formed of rare earth elements and silicon oxide, and the crystalline compound formed of rare earth elements and silicon oxide includes: Y ₂ SiO ₅ , Y ₂ Si ₂ O ₇ , La ₂ SiO _5. La ₂ Si ₂ O ₇ , Ce ₂ SiO ₅ , Pr ₂ SiO ₅ , Pr ₂ Si ₂ O ₇ , Nd ₂ SiO ₅ , Nd ₄ Si ₃ O ₁₂ , Nd ₂ Si ₂ O ₇ , Sm ₂ SiO ₅ , Sm ₄ Si ₃ O ₁₂ , Sm ₂ Si ₂ O ₇ , Eu ₂ SiO ₅ , EuSiO ₃ , Eu ₂ Si ₂ O ₇ , Gd ₂ SiO ₅ , Gd ₄ Si 3 O ₁₂ , Gd _{2 Si 2 O 7} , Tb ₂ SiO ₅ , Tb ₂ Si ₂ O ₇ , Dy ₂ SiO ₅ , Dy ₄ Si ₃ O ₁₂ , Dy ₂ Si ₂ O _{7 ,} Ho ₂ SiO ₅ , Er ₂ Si ₂ O 7 , Er ₂ SiO ₅ , Er ₄ Si ₃ O _{12 ,} Er ₂ Si ₂ O ₇ , Tm ₂ SiO ₅ , Tm _{2 Si 2} O 7 , Yb 2 SiO ₅ , Yb ₄ Si ₃ O ₁₂ , Yb ₂ Si ₂ O ₇ , Lu ₂ SiO ₅ , Lu ₄ Si ₃ At least one of O ₁₂ or Lu ₂ Si ₂ O ₇ .

Preferably, the material of the composite corrosion-resistant coating is at least one of oxyfluorides of rare earth elements, and amorphous compounds formed with silicon oxide and aluminum oxide.

Preferably, the composition of the composite corrosion-resistant coating is uniform, and the fluctuation range of the composition in the thickness direction is less than 5%.

Preferably, the composition of the composite corrosion-resistant coating is uniform, and the fluctuation range of the composition in the thickness direction is less than 1%.

Correspondingly, the present invention also provides a method for forming a composite corrosion-resistant coating on the surface of a component body using a device for forming a composite corrosion-resistant coating, comprising the following steps: providing the above-mentioned device for forming a composite corrosion-resistant coating ; Use the first excitation device to excite the first target atoms in the first target; use the second excitation device to excite the second target atoms in the second target, and the first target atom nuclei and the second target Atoms form a composite corrosion-resistant coating on the surface of the component body; and, using a rate monitor to monitor the formation rate of the composite corrosion-resistant coating, when the formation rate deviates from the target rate, the deviation signal is fed back to the first auxiliary A monitor and a second auxiliary monitor, the first auxiliary monitor and the second auxiliary monitor independently control the speed of the respective targets according to the strength changes of the characteristic signals of the first target and the second target, so as to control the composite Stability of corrosion resistant coating formation rate.

Preferably, the rate monitor includes a quartz crystal oscillator; when forming a composite corrosion-resistant coating on the surface of the component body, it also includes: forming a composite corrosion-resistant coating on the surface of the quartz crystal oscillator; The change of the resonance frequency of the body can be monitored in real time to monitor the change of the formation rate of the composite corrosion-resistant coating.

Correspondingly, the present invention also provides a semiconductor component containing the corrosion-resistant coating, including: a component body; the above-mentioned composite corrosion-resistant coating is located on the surface of the component body and has uniform composition along its thickness direction.

Correspondingly, the present invention also provides a plasma processing device, comprising: a reaction chamber, in which there is a plasma environment; and the above-mentioned semiconductor components, located in the reaction chamber, exposed to the plasma environment.

Preferably, the plasma environment contains at least one of fluorine, chlorine, oxygen or hydrogen plasma.

Preferably, the plasma processing device is a plasma etching device or a plasma cleaning device.

Preferably, when the plasma processing device is an inductively coupled plasma processing device, the parts include: a ceramic plate, an inner liner, a gas nozzle, a gas distribution plate, a gas pipe flange, an electrostatic chuck element, a cover ring, a focusing At least one of a ring, an insulating ring, or a plasma confinement device.

Preferably, when the plasma processing device is a capacitively coupled plasma processing device, the components include: a shower head, an upper grounding ring, a moving ring, a gas distribution plate, a gas buffer plate, an electrostatic chuck element, and a lower grounding ring , a cover ring, a focus ring, an insulating ring, or a plasma confinement device.

Compared with the prior art, the technical solutions of the embodiments of the present invention have the following beneficial effects: In the device for forming a composite corrosion-resistant coating provided by the technical solution of the present invention, a rate monitor, a first auxiliary monitor and a second auxiliary monitor are provided in the vacuum chamber, wherein the rate monitor is used to monitor the The formation rate of the composite corrosion-resistant coating, when the formation rate deviates from the target rate, the deviation signal is fed back to the first auxiliary monitor and the second auxiliary monitor, the first auxiliary monitor and the second auxiliary monitor The speed of each target is independently controlled according to the strength and weakness of the characteristic signals of the first target and the second target, so that the composition uniformity in the composite corrosion-resistant coating formed by the device is better, so as to improve the composite corrosion resistance. The stability of the coating against plasma corrosion in the plasma environment maintains the stability of the plasma etching environment.

As mentioned in the previous technology, there is an urgent need to prepare a composite corrosion-resistant coating with high compositional uniformity on the surface of the component body to meet the requirements of advanced manufacturing processes. For this reason, the present invention is committed to providing a device for forming a composite corrosion-resistant coating, a method for forming a composite corrosion-resistant coating on the surface of a component body, a semiconductor component and a plasma treatment device, which are described in detail below:

FIG. 1 is a schematic structural diagram of a plasma processing device of the present invention.

Please refer to Fig. 1, the plasma processing device comprises: reaction chamber 100, is plasma environment in the reaction chamber 100, semiconductor parts and reaction chamber 100 internal cavity walls are exposed in the plasma environment, and institute plasma comprises F plasma, At least one of Cl-containing plasma, H-containing plasma, or O-containing plasma.

The plasma processing device also includes: a base 101, an electrostatic chuck 103 is arranged above the base 101, and an electrode (not shown in the figure) is arranged inside the electrostatic chuck 103, and the electrode is electrically connected to a direct current power supply DC , used to generate electrostatic attraction to fix the substrate W to be processed, and the plasma is used to process the substrate W to be processed. Due to the strong corrosiveness of plasma, in order to prevent the surface of semiconductor components from being corroded by plasma, it is necessary to coat the surface of the component body with a corrosion-resistant coating.

In this embodiment, the plasma processing device is a capacitively coupled plasma reaction device, and correspondingly, the semiconductor components exposed to the plasma environment include: a shower head 102, an upper grounding ring 104, a moving ring, and a gas distribution plate 105 , a gas buffer plate, an electrostatic chuck 103 , a lower grounding ring 106 , a cover ring 107 , a focusing ring 108 , an insulating ring, and a plasma confinement device 109 .

FIG. 2 is a schematic structural diagram of another plasma processing device of the present invention.

In this embodiment, the plasma reaction device is an inductively coupled plasma reaction device. Correspondingly, the semiconductor components exposed to the plasma environment include: a ceramic plate, an inner liner 200, a gas nozzle 201, a gas distribution plate, and a gas pipe At least one of a flange, an electrostatic chuck 202 , a cover ring 203 , a focus ring 204 , an insulating ring, and a plasma confinement device 205 .

In other embodiments, the plasma processing device may also be a plasma cleaning device.

With the continuous progress of high-end semiconductor manufacturing process (below 10nm), the plasma environment used in plasma etching process is more complex, and the yttrium-containing coating with a single oxide component shows a trend towards optimization of composite corrosion-resistant coatings. To meet the requirements of more harsh plasma etching environment for corrosion-resistant coatings.

The device for forming the composite corrosion-resistant coating is described in detail below:

Fig. 3 is a schematic diagram of a device for forming a composite corrosion-resistant coating according to the present invention.

Please refer to FIG. 3 , which is used to form a composite corrosion-resistant coating including: a vacuum chamber 300; a first target 301a and a second target 301b located in the vacuum chamber 300; a component body 400 located in the vacuum chamber 300 Inside, set opposite to the first target 301a and the second target 301b; the first excitation device is used to excite the first target atoms in the first target 301a; the second excitation device is used to excite the atoms of the first target in the first target 301a; The second target atoms in the second target 301b, the first target atoms and the second target atoms form a composite corrosion-resistant coating 401 on the surface of the component body; the first auxiliary monitor 303a is located in the The vacuum chamber 300 is used to monitor the characteristic signal of the first target 301a; the second auxiliary monitor 303b is located in the vacuum chamber 300 and is used to monitor the characteristic signal of the second target 303b; speed monitoring A device 302, located in the vacuum chamber 300, is used to monitor the formation rate of the composite corrosion-resistant coating 401, and when the formation rate deviates from the target rate, the deviation signal is fed back to the first auxiliary monitor 303a and the second auxiliary monitor 303a. Auxiliary monitor 303b, the first auxiliary monitor 303a and the second auxiliary monitor 303b independently control the speed of the respective targets according to the strength changes of the characteristic signals of the first target 301a and the second target 301b respectively, so as to control the recombination The stability of the rate during the formation of the corrosion-resistant coating 401 realizes the uniformity of each composition in the composite coating.

The first target 301a excites the atoms in the first target 301a under the action of the first excitation device, and the second target 301b excites the atoms in the second target 301b under the action of the second excitation device. Atoms, atoms of the first target 301 a and atoms of the second target 301 b form a composite corrosion-resistant coating 401 on the surface of the component body 401 .

After the target is excited, it emits a certain characteristic signal into the environment, such as: thermoradiation spectrum, which is related to the material of each target material, and different materials have different thermoradiation spectra. Since the materials of the first target 301a and the second target 301b are different, the spectra of the emitted thermal radiation after the excitation of the first target 301a and the second target 301b are different, as specifically shown in FIG. 4 . 1 in 4 represents the schematic diagram of the thermal radiation spectrum and wavelength of the first target 301a, and 2 represents the schematic diagram of the thermal radiation spectrum and wavelength of the second target 301b, where yttrium oxide is used as the first target The material, yttrium fluoride as the second target material is used as an example to illustrate, the radiation intensity of each band can be measured by a spectrometer, and the control characteristic signal is selected as the control signal, such as: the strongest peak intensity, integrated intensity or characteristic wavelength optical power.

The optical power of the characteristic wavelength is selected as the control signal for detailed description as follows.

Please refer to Figure 5, (a) represents the schematic diagram of the relationship between the formation rate of the composite corrosion-resistant coating with time; (b) represents the thermal radiation spectrum emitted by the first target after being excited as the characteristic wavelength optical power, the first Schematic diagram of the relationship between the characteristic wavelength optical power time of a target; (c) represents the characteristic wavelength optical power time of the second target when the thermal radiation spectrum emitted by the second target after being excited is the characteristic wavelength optical power Relationship diagram.

It can be seen from Fig. 5 that the formation rate of the composite corrosion-resistant coating decreases within the time t1~t2 by using the rate monitor, and by comparing with the target rate, the deviation signal is fed back to the first auxiliary A monitor and a second auxiliary monitor, the first auxiliary monitor monitors that the optical power of the characteristic wavelength of the first target material drops within time t1~t2, and the second auxiliary monitor monitors that the optical power of the second target material When the optical power of the characteristic wavelength increases within the time t1~t2, the first auxiliary monitor increases the speed of the first target according to the feedback information of the optical power of the characteristic wavelength of the first target, and reduces the speed of the second target. In order to maintain the stability of the overall rate and further improve the uniformity of each component of the composite corrosion-resistant coating.

Figure 5 shows that the formation rate of the composite corrosion-resistant coating decreases within the time period t1~t2, and the first auxiliary monitor detects that the characteristic wavelength optical power of the first target decreases within the time period t1~t2, so The second auxiliary monitor detects that the optical power of the characteristic wavelength of the second target rises within the time t1~t2 as an example for illustration, but it is not limited to this in fact. As long as the rate monitor monitors the formation rate of the composite corrosion-resistant coating, when the formation rate deviates from the target rate, the deviation signal is fed back to the first auxiliary monitor and the second auxiliary monitor, and the first auxiliary monitor and the second auxiliary monitor independently control the speeds of the respective targets according to the intensity changes of the characteristic signals of the first target and the second target, so that the uniformity of the components in the composite corrosion-resistant coating can be improved. The uniformity of the components in the composite corrosion-resistant coating improves the stability of the composite corrosion-resistant coating in the plasma environment against plasma corrosion and the stability of plasma etching performance. In other words, when the formation rate of the composite corrosion-resistant coating decreases within the time period t1~t2, the first auxiliary monitor detects that the optical power of the characteristic wavelength of the first target decreases within the time period t1~t2 , the second auxiliary monitor monitors that the optical power of the characteristic wavelength of the second target rises within the time t1~t2, if there is no function of the first auxiliary detector and the second auxiliary detector, it is only controlled according to the total rate , it will be misjudged that the speed of the two targets needs to be increased at the same time, which actually causes large fluctuations in the composition of the second target in the composite corrosion-resistant coating. The effect of using the present invention is that the speed of each target can be independently controlled according to the actual change of each target, and the uniformity of the components of each target in the composite corrosion-resistant coating can be maintained.

In addition to the thermal radiation spectrum, after the target is excited, the temperature of the target itself will also change. Generally, the higher the temperature, the greater the speed of the target. Therefore, the temperature of each target can be used as an auxiliary detection signal. During the formation of the composite corrosion-resistant coating, an infrared thermometer is used to monitor the first target and the second target in real time.

Please refer to Figure 6, (d) represents the schematic diagram of the relationship between the formation rate of the composite corrosion-resistant coating with time; (e) represents the schematic diagram of the relationship between the temperature and time after the first target is excited; (f) represents the relationship between the first target Schematic diagram of the relationship between temperature and time after the two targets are excited.

It can be seen from Fig. 6 that the formation rate of the composite corrosion-resistant coating decreases within the time t1~t2 by using the rate monitor, and by comparing with the target rate, the deviation signal is fed back to the first auxiliary A monitor and a second auxiliary monitor, the first auxiliary monitor monitors that the temperature of the first target material drops within time t1~t2, and the second auxiliary monitor monitors that the temperature of the second target material drops within time t1 ~t2 rises, the first auxiliary monitor adjusts the speed of the first target according to the temperature information of the first target, and reduces the speed of the second target to maintain the stability of the overall speed and further control The uniformity of the components of the composite coating.

Fig. 6 shows that the formation rate of the composite corrosion-resistant coating decreases within the time period t1~t2, the first auxiliary monitor detects that the temperature of the first target drops within the time period t1~t2, and the second The auxiliary monitor detects that the temperature of the second target rises within the time t1~t2 as an example for illustration, but it is actually not limited thereto. As long as the rate monitor monitors the formation rate of the composite corrosion-resistant coating, when the formation rate deviates from the target rate, the deviation signal is fed back to the first auxiliary monitor and the second auxiliary monitor, and the first auxiliary monitor and the second auxiliary monitor are independently controlled according to the temperature changes of the first target material and the second target material, so that the uniformity of the components in the composite corrosion-resistant coating can be improved. The uniformity of the components in the composite corrosion-resistant coating improves the stability of the composite corrosion-resistant coating in the plasma environment against plasma corrosion and the stability of plasma etching performance. If there is no function of the first auxiliary detector and the second auxiliary detector, if the control is only based on the total rate, it will be misjudged that the speed of the two targets needs to be increased at the same time at this time, which will actually cause a composite corrosion-resistant coating. The composition of the second target material fluctuates greatly. The effect of using the present invention is that the speed of each target can be independently controlled according to the actual change of each target, and the uniformity of the components of each target in the composite coating can be maintained.

Fig. 7 is a flow chart of the process of forming the composite corrosion-resistant coating by using the device for forming the composite corrosion-resistant coating according to the present invention.

Please refer to Figure 7, step S1: provide the above-mentioned device for forming a composite corrosion-resistant coating; step S2: use the first excitation device to excite the first target atoms in the first target, and use the second excitation device to excite The second target atoms in the second target, the first target atoms and the second target atoms form a composite corrosion-resistant coating on the surface of the component body; step S3: use a rate monitor to monitor the composite corrosion-resistant coating The formation rate of the corrosion coating, when the formation rate deviates from the target rate, the deviation signal is fed back to the first auxiliary monitor and the second auxiliary monitor, and the first auxiliary monitor and the second auxiliary monitor are respectively based on the first auxiliary monitor The change of the characteristic signal of the first target and the second target independently controls the rate of each target, so as to control the stability of the formation rate of the composite corrosion-resistant coating.

The rate monitor includes a quartz crystal oscillator. During the process of forming a composite corrosion-resistant coating on the surface of the component body by using the first excitation device and the second excitation device, a composite corrosion-resistant coating will also be formed on the surface of the quartz crystal oscillator. coating. Along with the variation of described composite corrosion-resistant coating thickness, the resonant frequency of quartz crystal resonator body can shift, therefore, by measuring the change situation of the resonant frequency of quartz crystal resonator body, just can reflect the change of composite corrosion-resistant coating formation rate Changes can be made to monitor the rate of composite corrosion-resistant coating formation in real time.

In one embodiment, the rate ratio between the first target and the second target is 10:1, although the rate of the first target is quite different from the rate of the second target, but for The device for forming the composite corrosion-resistant coating is provided with a first auxiliary monitor and a second auxiliary monitor. When the rate monitor detects that the formation rate of the composite corrosion-resistant coating deviates from the target rate, the deviation signal is fed back to the first auxiliary monitor. The first auxiliary monitor and the second auxiliary monitor independently control the adjustment deviation of the speed of each target according to the strength change of the characteristic signal of the first target and the second target, so as to Rapidly control the stability of the formation rate of the composite corrosion-resistant coating, thereby further improving the uniformity of components in the composite corrosion-resistant coating. Fig. 8 is a schematic structural diagram of a semiconductor component of the present invention.

Please refer to FIG. 8 , the semiconductor component includes: a component body 400 , and a composite corrosion-resistant coating 401 located on the surface of the component body 400 , with uniform composition along its thickness direction.

In one embodiment, the material of the composite corrosion-resistant coating 401 is a rare earth element oxyfluoride crystalline compound, and the rare earth element oxyfluoride crystalline compound includes: YOF (yttrium oxyfluoride), Y ₅ O ₄ F ₇ (heptafluorotetroxide five yttrium), Y ₆ O ₅ F ₈ (octafluoro hexa yttrium oxide), Y ₇ O ₆ F ₉ (nonafluoro hexa yttrium oxide), Y ₁₇ O ₁₄ F ₂₃ (23 Yttrium), LaOF (lanthanum oxyfluoride), CeOF (cerium oxyfluoride), CeO ₆ F ₂ (cerium hexaoxide difluoride), PrOF (magnesium oxyfluoride), NdOF (neodymium oxyfluoride), SmOF (samarium oxyfluoride), EuOF (europium oxyfluoride), Eu ₃ O ₂ F ₅ (trieuropium pentafluorooxide), Eu ₅ O ₄ F ₇ (pentaeuropium heptafluorotetraoxide), GdOF (gionium oxyfluoride), Gd ₅ O ₄ F ₇ (pentafluoride tetraoxide), TbOF (cerium oxyfluoride), DyOF (dysprosium oxyfluoride), HoOF (fluorine oxide), ErOF (erbium oxyfluoride), Er ₃ O ₂ F ₅ (trierbium dioxide pentafluoride ), Er ₅ O ₄ F ₇ (erbium heptafluoride tetraoxide), TmOF (urbium oxyfluoride), YbOF (ytterbium oxyfluoride), Yb ₅ O ₄ F ₇ (ytterbium heptafluoride tetraoxide), Yb ₆ O ₅ F ₈ (hexytterium octafluoropentoxide), LuO (thulium oxide), Lu ₃ O ₂ F ₅ (trimentium pentafluoropentoxide), Lu ₅ O ₄ F ₇ (pentafluoropentatetoxide) or Lu ₇ O At least one of ₆ F ₉ (nonafluorine heptoxide).

In another embodiment, the material of the composite corrosion-resistant coating 401 is a crystalline compound formed by rare earth elements and alumina, and the crystalline compound formed by rare earth elements and alumina includes: Y ₄ Al ₂ O ₉ (dialuminum nine oxide Tetrayttrium), YAlO ₃ (aluminum yttrium trioxide), Y ₃ Al ₅ O ₁₂ (pentaluminum dodeca triyttrium oxide), LaAlO ₃ (aluminum lanthanum trioxide), CeAlO ₃ (aluminum cerium oxide), Ce ₆ AlO ₃ (monoaluminum hexacerium oxide), Pr ₄ Al ₂ O ₉ (dialuminum nonaluminum oxide), PrAlO ₃ (monoaluminum trioxide), PrAl ₁₁ O ₁₈ (undecylaluminum octadecoxide) ), Nd ₄ Al ₂ O ₉ (tetraneodymium dialuminum nonoxide), NdAlO ₃ (aluminum neodymium trioxide), NdAl ₁₁ O ₁₈ (11th aluminum 18th neodymium oxide), Sm ₄ Al ₂ O ₉ (dialuminum Samarium nonoxide), SmAlO ₃ (Samarium trioxide of aluminum), Eu ₄ Al ₂ O ₉ (Tetraeuropium of dialuminum nonoxide), EuAlO ₃ (Eurium trioxide of aluminum), Eu ₃ Al ₅ O ₁₂ (Pentaluminum Europium dodecaoxide), Gd ₄ Al ₂ O ₉ (tetragimonium dialuminum nonoxide), GdAlO ₃ (trigerium dialuminum oxide), Gd ₃ Al ₅ O ₁₂ (trigerium pentaaluminum dodecaoxide), Tb ₄ Al ₂ O ₉ (tetraurium dialuminum nonoxide), TbAlO ₃ (aluminum trioxide), Tb ₃ Al ₅ O ₁₂ (pentaluminum dodecaoxide), Dy ₄ Al ₂ O ₉ (dialuminum nonoxide Dysprosium tetraoxide), DyAlO ₃ (aluminum dysprosium trioxide), Dy ₃ Al ₅ O ₁₂ (tridysprosium pentaaluminum dodecaoxide), Ho ₄ Al ₂ O ₉ (dialuminum nine oxide tetra-), HoAlO ₃ (aluminum Trioxide†), Ho ₃ Al ₅ O ₁₂ (pentaluminum dodecoxide‧), Er ₄ Al ₂ O ₉ (two aluminum nine oxide four erbium), ErAlO ₃ (one aluminum erbium trioxide), Er ₃ Al ₅ O ₁₂ (erbium pentaaluminum dodecoxide), Tm ₄ Al ₂ O ₉ (tetracerium dialuminum nonoxide), TmAlO ₃ (aluminum trioxide), Tm ₃ Al ₅ O ₁₂ (pentaluminum trioxide銩), Yb ₄ Al ₂ O ₉ (four ytterbium dialuminum nine oxides), Yb ₆ Al ₁₀ O ₂₄ (decaaluminum twenty-four tetrachtium oxide six ytterbium), Lu ₄ Al ₂ O ₉ (two aluminum nine oxide tetrathium), At least one of LuAlO ₃ (monoaluminum trioxide) or Lu ₃ Al ₅ O ₁₂ (pentaluminum dodecaoxide).

In yet another embodiment, the material of the composite corrosion-resistant coating 401 is that the composite corrosion-resistant coating includes a crystalline compound formed of rare earth elements and silicon oxide, and the crystalline compound formed of rare earth elements and silicon oxide includes: Y ₂ SiO ₅ (silicon pentoxide), Y ₂ Si ₂ O ₇ (disilicon heptoxide), La ₂ SiO ₅ (silicon pentoxide), La ₂ Si ₂ O ₇ (disilicon heptoxide dilanthanum), Ce ₂ SiO ₅ (a silicon pentoxide), Pr ₂ SiO ₅ (a silicon pentoxide), Pr ₂ Si ₂ O ₇ (disilicon heptaoxide), Nd ₂ SiO ₅ ( Nd ₄ Si ₃ O ₁₂ (neodymium trisilicon pentoxide), Nd ₂ Si ₂ O ₇ (neodymium disilicon pentoxide), Sm ₂ SiO ₅ (samarium disilicon pentoxide ), Sm ₄ Si ₃ O ₁₂ (tetrasarium trisilicon dodecoxide), Sm ₂ Si ₂ O ₇ (sarmarium disilicon heptoxide), Eu ₂ SiO ₅ (dieuropium monosilicon pentoxide), EuSiO ₃ (one Europium trioxide), Eu ₂ Si ₂ O ₇ (dieuropium disilicon heptaoxide), Gd ₂ SiO ₅ (gimonium pentoxide), Gd ₄ Si ₃ O ₁₂ (tetrazirium trisilicon dodecaoxide), Gd ₂ Si ₂ O ₇ (dizincium disilicon heptaoxide), Tb ₂ SiO ₅ (dicerium monosilicon pentoxide), Tb ₂ Si ₂ O ₇ (dicerium disilicon heptaoxide), Dy ₂ SiO ₅ (dicerium monosilicon pentoxide Dysprosium oxide), Dy ₄ Si ₃ O ₁₂ (tetradysprosium trisilicon dodecoxide), Dy ₂ Si ₂ O ₇ (dysprosium disilicon heptaoxide), Ho ₂ SiO ₅ (silicon pentoxide), Er ₂ Si ₂ O ₇ (erbium disilicon heptoxide), Er ₂ SiO ₅ (erbium pentoxide), Er ₄ Si ₃ O ₁₂ (erbium trisilicon dodecoxide), Tm ₂ SiO ₅ (erbium Dicerium pentoxide), Tm ₂ Si ₂ O ₇ (dicerium disilicon heptaoxide), Yb ₂ SiO ₅ (2 ytterbium pentoxide), Yb ₄ Si ₃ O ₁₂ (4 ytterbium trisilicon dodecoxide), Yb ₂ Si ₂ O ₇ (ytterbium disilicon heptoxide), Lu ₂ SiO ₅ (dithium monosilicon pentoxide), Lu ₄ Si ₃ O ₁₂ (tetrathium trisilicon dodecoxide), or Lu ₂ Si ₂ O ₇ (At least one of the two silicon heptaoxide dithium).

In yet another embodiment, the material of the composite corrosion-resistant coating 401 includes at least one of oxyfluorides of rare earth elements, and amorphous compounds formed with silicon oxide and aluminum oxide.

Since the composition of the composite corrosion-resistant coating 401 is relatively uniform, in one embodiment, the fluctuation range of the composition of the composite corrosion-resistant coating 401 in its thickness direction is less than 5%, so that the composition of the composite corrosion-resistant coating 401 The corrosion resistance is relatively stable, which is beneficial to improve the stability of plasma etching.

In another embodiment, the fluctuation range of the composition of the composite corrosion-resistant coating 401 in its thickness direction is less than 1%, so that the composition uniformity of the composite corrosion-resistant coating 401 is higher, which is conducive to further improving the corrosion-resistant coating. performance stability.

It should be pointed out that the method of the present invention is not limited to the situation with only two targets, and for the situation with multiple targets and multiple corresponding auxiliary detectors, those with ordinary knowledge in the technical field of the present invention have no Under the condition of making progressive changes, it still belongs to the limited scope of the present invention.

Simultaneously, method of the present invention can also further provide a kind of non-destructive indirect quantitative detection method for the uniformity deviation size of each component in the composite corrosion-resistant coating, that is: 1. provide a standard sample, coat this composite corrosion-resistant coating on the standard sample, Record the change of the characteristic signal of each target during the formation of the composite corrosion-resistant coating; 2. Characterize the deviation of the composition uniformity of the standard sample (such as EDS, XPS, etc.), and establish the deviation of the characteristic signal and the deviation of the composition Standard correspondence; 3. Provide the parts to be coated, coat the composite corrosion-resistant coating on the parts, record the changes in the characteristic signals of each target during the formation of the composite corrosion-resistant coating; 4. The deviation of the signal is proportional to the standard correspondence, so that the deviation of each component can be deduced. Using this method, non-destructive measurement and quantitative measurement of sample composition can be realized, which is suitable for parts with large shapes (it is not convenient for direct measurement of EDS, XPS, etc.), and is also suitable for the detection of composite coatings in the production process of parts Quality control.

Although the present invention is disclosed above, the present invention is not limited thereto. Anyone with ordinary knowledge in the technical field to which the present invention pertains will not depart from it. Various changes and modifications can be made within the spirit and scope of the present invention. Therefore, the scope of protection of the present invention should be based on the scope defined by the scope of the patent application.

100: reaction chamber 101: base 102: sprinkler head 103, 202: electrostatic chuck 104: Upper grounding ring 105: Gas distribution plate 106: Lower grounding ring 107,203: cover ring 108,204: focus ring 109,205: Plasma Confinement Devices 200: inner bushing 201: gas nozzle 300: vacuum chamber 301a: The first target 301b: Second target 302: Rate Monitor 303a: First Auxiliary Monitor 303b: Second auxiliary monitor 400: Part body 401: Composite corrosion-resistant coating W: Substrate S1～S3: Steps

Fig. 1 is a schematic structural view of a plasma processing device of the present invention; 2 is a schematic structural view of another plasma processing device of the present invention; Fig. 3 is a kind of device schematic diagram for forming composite corrosion-resistant coating of the present invention; Fig. 4 is a schematic diagram of the thermal radiation spectrum and wavelength of the first target material and the second target material of the present invention; 5 is a schematic diagram of the relationship between the formation rate of the composite corrosion-resistant coating of the present invention, the thermal radiation spectrum of the first target material and the second target material, and time; 6 is a schematic diagram of the relationship between the formation rate of the composite corrosion-resistant coating of the present invention, the temperature and time of the first target material and the second target material; Fig. 7 is the process flow chart of the present invention utilizing the device for forming the composite corrosion-resistant coating to form the composite corrosion-resistant coating; and Fig. 8 is a schematic structural diagram of a semiconductor component of the present invention.

S1~S3: steps

Claims (17)

A device for forming a composite corrosion-resistant coating, comprising: a vacuum chamber; A first target material and a second target material are located in the vacuum cavity; a part body, located in the vacuum chamber, opposite to the first target and the second target; A first excitation device, used to excite a first target atom in the first target; A second excitation device is used to excite a second target atom in the second target, and the first target atom and the second target atom form a composite corrosion-resistant coating on the surface of the component body layer; a first auxiliary monitor, located in the vacuum chamber, for monitoring the characteristic signal of the first target; a second auxiliary monitor, located in the vacuum chamber, for monitoring the characteristic signal of the second target; A rate monitor, located in the vacuum chamber, is used to monitor a formation rate of the composite corrosion-resistant coating, and when the formation rate deviates from a target rate, a deviation signal is fed back to the first auxiliary monitor and the second auxiliary monitor. Two auxiliary monitors, the first auxiliary monitor and the second auxiliary monitor are independently controlled according to the strength changes of the characteristic signals of the first target and the second target, so that the composite corrosion-resistant coating is formed rate stability control. The device for forming a composite corrosion-resistant coating as described in Claim 1, wherein the characteristic signal is a spectral signal, and the spectral signal includes: the strongest peak intensity, spectral integrated area or characteristic wavelength optical power, the first auxiliary monitoring The detector and the second auxiliary monitor are spectrometers. The device for forming a composite corrosion-resistant coating as claimed in claim 2, wherein the characteristic signal is temperature, and the first auxiliary monitor and the second auxiliary monitor are infrared thermometers. The device for forming a composite corrosion-resistant coating as described in Claim 1, wherein the material of the composite corrosion-resistant coating is a rare earth element oxyfluoride crystalline compound, and the rare earth element oxyfluorine crystalline compound includes: YOF, Y ₅ O ₄ F ₇ , Y ₆ O ₅ F ₈ , Y ₇ O ₆ F ₉ , Y ₁₇ O ₁₄ F ₂₃ , LaOF, CeOF, CeO ₆ F ₂ , PrOF, NdOF, SmOF, EuOF, Eu ₃ O ₂ F ₅ , Eu ₅ O ₄ F ₇ , GdOF, Gd ₅ O ₄ F ₇ , TbOF, DyOF, HoOF, ErOF, Er ₃ O ₂ F ₅ , Er ₅ O ₄ F ₇ , TmOF, YbOF, Yb ₅ O ₄ F ₇ , Yb ₆ O At least one of ₅ F ₈ , LuO, Lu ₃ O ₂ F ₅ , Lu ₅ O ₄ F ₇ or Lu ₇ O ₆ F ₉ . The device for forming a composite corrosion-resistant coating as described in Claim 1, wherein the material of the composite corrosion-resistant coating is a crystalline compound formed of a rare earth element and alumina, and the crystalline compound formed of a rare earth element and alumina includes: Y ₄ Al ₂ O ₉ , YAlO ₃ , Y ₃ Al ₅ O ₁₂ , LaAlO ₃ , CeAlO ₃ , Ce ₆ AlO ₃ , Pr ₄ Al ₂ O ₉ , PrAlO ₃ , PrAl ₁₁ O ₁₈ , Nd ₄ Al ₂ O ₉ , NdAlO ₃ , NdAl ₁₁ O ₁₈ , Sm ₄ Al ₂ O ₉ , SmAlO ₃ , Eu ₄ Al ₂ O ₉ , EuAlO ₃ , Eu ₃ Al ₅ O ₁₂ , Gd ₄ Al ₂ O ₉ , GdAlO ₃ , Gd ₃ Al ₅ O ₁₂ , Tb ₄ Al ₂ O ₉ , _{TbAlO 3} , Tb ₃ Al ₅ O ₁₂ , Dy ₄ Al 2 O ₉ , DyAlO ₃ , Dy ₃ Al ₅ O ₁₂ , Ho ₄ Al ₂ O ₉ , HoAlO ₃ , Ho ₃ Al ₅ O ₁₂ , Er ₄ Al ₂ O ₉ , _{ErAlO 3} , _{Er 3} Al ₅ O ₁₂ , Tm 4 Al 2 O ₉ , TmAlO ₃ , Tm ₃ Al ₅ O ₁₂ , Yb ₄ Al ₂ O ₉ , Yb ₆ Al ₁₀ O ₂₄ , at least one of Lu ₄ Al ₂ O ₉ , LuAlO ₃ or Lu ₃ Al ₅ O ₁₂ . The device for forming a composite corrosion-resistant coating as described in claim 1, wherein the material of the composite corrosion-resistant coating is a crystalline compound formed of rare earth elements and silicon oxide, and the crystalline compound formed of rare earth elements and silicon oxide includes: Y ₂ SiO ₅ , Y ₂ Si ₂ O ₇ , La ₂ SiO ₅ , La ₂ Si ₂ O ₇ , Ce ₂ SiO ₅ , Pr ₂ SiO ₅ , Pr ₂ Si ₂ O ₇ , Nd ₂ SiO ₅ , Nd ₄ Si ₃ O ₁₂ , Nd ₂ Si ₂ O ₇ , Sm ₂ SiO ₅ , Sm ₄ Si ₃ O ₁₂ , Sm ₂ Si ₂ O ₇ , Eu ₂ SiO ₅ , EuSiO ₃ , Eu ₂ Si ₂ O ₇ , Gd ₂ SiO ₅ , Gd ₄ Si ₃ O ₁₂ , Gd ₂ Si ₂ O ₇ , Tb ₂ SiO ₅ , Tb ₂ Si ₂ O ₇ , Dy ₂ SiO ₅ , Dy ₄ Si ₃ O ₁₂ , Dy ₂ Si ₂ O ₇ , Ho ₂ SiO ₅ , Er ₂ Si ₂ O ₇ , Er _{2 SiO 5} , Er ₄ Si ₃ O ₁₂ , Er ₂ Si 2 O ₇ , Tm ₂ SiO ₅ , Tm ₂ Si ₂ O 7 , Yb ₂ SiO ₅ , Yb _{4 Si 3 O 12} , Yb At least one of ₂ Si ₂ O ₇ , Lu ₂ SiO ₅ , Lu ₄ Si ₃ O ₁₂ or Lu ₂ Si ₂ O ₇ . The device for forming a composite corrosion-resistant coating as described in Claim 1, wherein the material of the composite corrosion-resistant coating is oxyfluoride of rare earth elements, and amorphous compounds formed with silicon oxide and aluminum oxide at least one. The device for forming a composite corrosion-resistant coating according to claim 1, wherein the composition of the composite corrosion-resistant coating is uniform, and the fluctuation range of the composition in the thickness direction is less than 5%. The device for forming a composite corrosion-resistant coating as claimed in claim 8, wherein the composition of the composite corrosion-resistant coating is uniform, and the fluctuation range of the composition in the thickness direction is less than 1%. A method for forming a composite corrosion-resistant coating on the surface of a component body, comprising the following steps: Provide a device for forming a composite corrosion-resistant coating as described in any one of claims 1 to 9; Use the first excitation device to excite the first target atoms in the first target, use the second excitation device to excite the second target atoms in the second target, and the first target atoms forming the composite corrosion-resistant coating on the surface of the component body with the second target atoms; and Utilize the rate monitor to monitor the formation rate of the composite corrosion-resistant coating, and when the formation rate deviates from the target rate, the deviation signal is fed back to the first auxiliary monitor and the second auxiliary monitor, the first auxiliary The monitor and the second auxiliary monitor independently control the speed of the respective targets according to the strength of the characteristic signal of the first target and the second target, so as to control the stability of the formation rate of the composite corrosion-resistant coating sex. The method for forming a composite corrosion-resistant coating as described in claim 10, wherein the rate monitor includes a quartz crystal oscillator; when forming the composite corrosion-resistant coating on the surface of the component body, it also includes: The composite corrosion-resistant coating is formed on the surface of the crystal oscillator; the formation rate of the composite corrosion-resistant coating is monitored by measuring the change of the resonant frequency of the quartz crystal oscillator. A semiconductor component, comprising: a component body; The composite anti-corrosion coating formed by the method described in any one of claim 10 or 11 is located on the surface of the part body, and its composition is uniform along its thickness direction. A plasma processing device, including: A reaction chamber, which is a plasma environment; A semiconductor component as claimed in claim 12 is located in the reaction chamber and exposed to the plasma environment. The plasma processing apparatus according to claim 13, wherein the plasma environment contains at least one of fluorine, chlorine, oxygen or hydrogen plasma. The plasma processing device as claimed in claim 13, wherein the plasma processing device is a plasma etching device or a plasma cleaning device. The plasma processing device as claimed in claim 15, wherein, when the plasma processing device is an inductively coupled plasma processing device, the components include: a ceramic plate, an inner liner, a gas nozzle, a gas distribution plate, and a gas pipe method At least one of a blue, an electrostatic chuck element, a cover ring, a focus ring, an insulating ring, or a plasma confinement device. The plasma processing device as claimed in claim 15, wherein when the plasma processing device is a capacitively coupled plasma processing device, the parts include: a shower head, an upper grounding ring, a moving ring, a gas distribution plate, a gas At least one of a buffer plate, an electrostatic chuck element, a lower ground ring, a cover ring, a focus ring, an insulating ring, or a plasma confinement device.

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