TW202303160A - The electro-conductive contact pin and manufacturing method thereof - Google Patents

Abstract

The present invention relates to an electrically conductive contact pin formed by laminating a plurality of metal layers, and provides an electrically conductive contact pin having improved physical or electrical properties, and a manufacturing method therefor.

Description

Conductive contact pin and manufacturing method thereof

The invention relates to a conductive contact pin and its manufacturing method.

The conductive contact pins are contact pins that can be used in probe cards or test sockets that come into contact with a contact object to detect a test object. Hereinafter, as an example, a contact needle of a probe card will be illustrated and described.

The electrical characteristic test of the semiconductor device is performed by bringing the semiconductor wafer close to a probe card having a plurality of conductive contact pins and making the conductive contact pins contact corresponding electrode pads on the semiconductor wafer. When the conductive contact needles are brought into contact with the electrode pads on the semiconductor wafer, the semiconductor wafer is further brought closer to the probe card after the two have come into contact with each other. This processing is called over drive (over drive). Overdriving is a process of elastically deforming the conductive contact pins. By performing overdriving, even if the height of the electrode pads or the height of the conductive contact pins varies, all the conductive contact pins can be reliably brought into contact with the electrode pads. In addition, the conductive contact pins are elastically deformed when overdriven and their tips move on the electrode pads, thereby scrubbing. By this scraping, the oxide film on the surface of the electrode pad can be removed and the contact resistance can be reduced.

This kind of conductive contact pin can be manufactured by using Micro Electro Mechanical System (MEMS) process. The process of fabricating conductive contact pins using the MEMS process is described. First, photoresist is coated on the surface of the conductive substrate, and then the photoresist is patterned. Thereafter, the photoresist is used as a mold, the metal material is deposited in the opening by electroplating, the photoresist and the conductive substrate are removed, and the conductive contact pin is obtained. Here, a plurality of metal materials are stacked up and down to form conductive contact pins. In the case of a metal material with relatively high wear resistance, since the electrical conductivity is relatively low, there is a trade-off relationship between the wear resistance and the electrical conductivity when a plurality of metal materials are laminated to make a conductive contact pin. In order to improve the wear resistance at the end of the conductive contact pin, since the metal material with high wear resistance should be configured in a thick thickness, the content of the relatively high conductive metal material will be reduced. Therefore, there are problems that the overall conductivity of the conductive contact pin becomes low and the current carrying capacity (Current Carrying Capacity) becomes small.

On the other hand, the end portion of the conductive contact pin is a portion that is in contact with the object. In the case where a plurality of metal materials are layered along the upper and lower layers, the following problems will arise: it is difficult to make the content of the metal material at the end portion different, Instead, it is difficult to improve physical properties or electrical properties at the ends. [Prior art literature] [Patent Document]

[Patent Document 1] Registered Patent Publication of Korean Registration No. 10-0449308

[Problem to be Solved by the Invention]

The present invention is made to solve the above-mentioned problems of the prior art, and an object of the present invention is to provide a conductive contact pin having improved physical and electrical properties in a conductive contact pin formed by laminating a plurality of metal layers, and a method of manufacturing the same. [Means to solve the problem]

In order to achieve this object of the present invention, the conductive contact pin according to the present invention includes: a main body portion including a first laminated portion of a plurality of metal laminated layer configurations; and a first end portion including a second laminated layer configuration of a plurality of metal laminated layers. A build-up part, and at least one metal layer constituting the first build-up part and at least one metal layer constituting the second build-up part are not arranged on the same horizontal line.

In addition, the number of laminated layers of the metal layers constituting the second laminated portion and the number of laminated layers of the metal layers constituting the first laminated portion are different from each other.

Also, the number of metal layers constituting the second build-up portion is smaller than the number of metal layers constituting the first build-up portion.

In addition, the first layered part and the second layered part are formed by alternately layering a first metal and a second metal, and in the first layered part and the second layered part, the first metal, The number of alternately laminated layers of the second metal is different from each other.

In addition, the first metal is formed of a metal selected from rhodium (Rhodium, Rh), platinum (Platinum, Pt), iridium (Iridium, Ir), palladium (Palladium) or an alloy thereof, or palladium cobalt (palladium-cobalt, PdCo) alloy, palladium-nickel (palladium-nickel, PdNi) alloy or nickel-phosphorus (nickel-phosphor, NiP) alloy, nickel-manganese (nickel-manganese, NiMn), nickel-cobalt (nickel-cobalt, NiCo) Or a nickel-tungsten (NiW) alloy, the second metal is formed of a metal selected from copper (Cu), silver (Ag), gold (Au) or an alloy thereof.

In addition, the lowermost layer of the first build-up part includes a first end-side vertical part, and the first end-side vertical part is also continuously formed on the inner side wall of the second build-up part along the second The inner side walls of the build-up part are arranged to extend in the vertical direction.

In addition, the bottom layer of the second build-up part is formed of the same metal material as the bottom layer of the first build-up part, and the bottom layer of the first build-up part is also continuously formed inside the second build-up part. side wall.

In addition, the first metal constituting the lowermost layer of the conductive contact pin is disposed between the second metal of the first build-up part and the second metal of the second build-up part, and the first metal is formed from the second metal of the second build-up part. The lower surface to the upper surface of the conductive contact pins are arranged to extend in a vertical direction.

In addition, a third build-up part arranged at the second end of the conductive contact pin is included.

In addition, at least one metal layer constituting the first build-up part and at least one metal layer constituting the third build-up part are not arranged on the same horizontal line.

In addition, the number of laminated layers of the third laminated part is different from at least one of the number of laminated layers of the first laminated part and the number of laminated layers of the second laminated part.

In addition, the number of laminated layers of the third laminated part is the same as the number of laminated layers of the second laminated part.

In addition, the lowermost layer of the first build-up part includes a second end-side vertical part, and the second end-side vertical part is also continuously formed on the inner side wall of the third build-up part and extends along the inner side wall. configuration.

In addition, the bottom layer of the third build-up part is formed of the same metal material as the bottom layer of the first build-up part, and the bottom layer of the first build-up part is also continuously formed on the bottom of the third build-up part. Internal side walls.

In addition, the metal layer constituting the first build-up part and the metal layer constituting the third build-up part are different from each other.

In addition, the first end portion further includes an outer extension portion.

In addition, the first laminated portion is formed by a metal layer with relatively high electrical conductivity and a metal laminate layer with relatively high wear resistance, and the thickness of the metal layer with high electrical conductivity is thicker than that of the metal layer with high wear resistance, The second laminated portion is formed by a metal layer with relatively high electrical conductivity and a metal layer with relatively high wear resistance, and the metal layer with high wear resistance is thicker than the metal layer with higher electrical conductivity.

In addition, the first laminated part is formed by a metal layer with relatively high electrical conductivity and a metal laminate layer with relatively high wear resistance, and the content of the metal layer with high electrical conductivity is larger than the content of the metal layer with high wear resistance, The second laminated portion is formed by a metal layer with relatively high electrical conductivity and a metal laminate layer with relatively high wear resistance, and the content of the metal layer with high wear resistance is greater than that of the metal layer with high electrical conductivity.

On the other hand, to achieve the object of the present invention, a method of manufacturing a conductive contact pin according to the present invention is a method of manufacturing a conductive contact pin comprising: a main body including a first a laminated part; and a first end part, comprising a second laminated part configured with a plurality of metal laminated layers, wherein the first laminated part and the second laminated part are respectively formed by plating with a mold.

In addition, the mold is formed of anodized film material. [Effect of the invention]

The present invention provides a conductive contact pin having improved physical or electrical properties in a conductive contact pin formed by laminating a plurality of metal layers, and a method of manufacturing the same.

The following is merely illustrative of the principles of the invention. Therefore, even if it is not explicitly described or illustrated in this specification, those skilled in the art can realize the principle of the invention and invent various devices included in the concept and scope of the invention. In addition, all conditional terms and examples listed in this specification should be understood in principle only for the purpose of clearly understanding the concept of the invention, and should not be limited to the examples and states specifically listed above.

The above objects, features and advantages will be further clarified by the following detailed description related to the accompanying drawings, so those who have ordinary knowledge in the technical field of the invention can easily implement the technical idea of the invention.

Embodiments described in this specification will be described with reference to cross-sectional views and/or perspective views that are ideal illustrations of the present invention. In order to effectively explain the technical content, the thicknesses of the films and regions shown in these drawings are exaggerated. The shape of the illustrations may be deformed due to manufacturing techniques and/or tolerances. In addition, the number of conductive contact pins shown in the figure is only an example of a part in the figure. Thus, embodiments of the invention are not limited to the specific forms shown, but also include variations in forms resulting from manufacturing processes. The technical terms used in this specification are for describing specific examples only, and are not intended to limit the present invention. Expressions in the singular include expressions in the plural unless the context clearly dictates otherwise. In this specification, it should be understood that terms such as "comprising" or "have" are intended to designate the existence of features, numbers, steps, actions, constituent elements, parts or combinations thereof described in this specification, and do not exclude in advance Existence or additional possibility of one or more other features or numbers, steps, actions, constituent elements, components, or combinations thereof.

Hereinafter, preferred embodiments of the present invention will be specifically described with reference to the accompanying drawings. When various embodiments are described below, even if the embodiments are different, components performing the same functions are given the same names and the same reference numerals for convenience. In addition, for the sake of convenience, configurations and operations already described in other embodiments will be omitted.

First Embodiment Hereinafter, a conductive contact pin ( 100 ) according to a preferred first embodiment of the present invention will be described with reference to FIG. 1A , FIG. 1B to FIG. 8( a ) and FIG. 8 ( b ). Figure 1A is a front perspective view of a conductive contact pin (100) according to a preferred first embodiment of the present invention, Figure 1B is a rear perspective view of a conductive contact pin (100) according to a preferred first embodiment of the present invention, Figure 2 (a)-(d) of FIG. 2 to (a) of FIG. 7-(d) of FIG. 7 are diagrams showing a method of manufacturing a conductive contact pin (100) according to a preferred first embodiment of the present invention , and Figure 8(a), Figure 8(b) is a perspective view of the first end of the conductive contact pin (100) according to the preferred first embodiment of the present invention (Figure 8(a)) and the first A perspective view of both ends ( FIG. 8( b )).

Referring first to Figure 1A and Figure 1B, the conductive contact pin (100) according to the preferred first embodiment of the present invention includes a first end (102), a second end (103) and a ) and the main body portion (101) between the second end portion (103). Here, the first end (102) and the second end (103) are parts in contact with the object, preferably the first end (102) is the part in contact with the detection object, and the second end (103) It is the part that contacts or connects with the object of the detection device.

The conductive contact pin (100) includes: a main body portion (101) including a first build-up portion (110) of a plurality of metal build-up layers; and a first end portion (102) including a second build-up of a plurality of metal build-up layers Ministry (120). At least one metal layer constituting the first build-up part (110) and at least one metal layer constituting the second build-up part (120) are not arranged on the same horizontal line.

The number of laminated layers of the second laminated part (120) arranged on the first end part (102) of the conductive contact pin (100) is different from the number of laminated layers of the first laminated part (110) arranged on the main body part (101). Preferably, the number of laminated layers of the second laminated part (120) arranged at the first end part (102) of the conductive contact pin (100) is lower than that of the first laminated part (110) arranged at the main body part (101) The number of layers with a small number of layers is formed.

The second end portion (103) of the conductive contact pin (100) is formed by laminating the same metal layer as that of the main body portion (101) with the same number of lamination layers. The second end portion (103) of the conductive contact pin (100) can be formed together with the main body portion (101) when performing a plating process to form the main body portion (101).

The number of laminated layers of the metal layer changes from the main body (101) of the conductive contact pin (100) to one side, which is the first end (102) of the conductive contact pin (100). The difference in the number of layers can distinguish the first end portion (102) from the main body portion (101).

By the laminated structure of the first laminated part (110) and the second laminated part (120), the physical characteristics or electrical properties are different from each other. By making the laminated structures of the first laminated part (110) and the second laminated part (120) different from each other, the content of the metal with high conductivity contained in the main body part (101) of the conductive contact pin (100) can be increased, And the content of the metal with high wear resistance contained in the first end portion (102) of the conductive contact pin (100) can be increased. Thereby, the current carrying capacity (Current Carrying Capacity) of the conductive contact pin (100) can be improved.

The plurality of metal layers may be composed of a first metal (210) and a second metal (230). The first metal (210) is a metal having relatively high wear resistance or hardness compared to the second metal (230), and the second metal (230) may be formed of a metal having relatively high electrical conductivity compared to the first metal (210) . The first metal (210) is preferably a metal selected from the following: rhodium (rhodium, Rh), platinum (platinum, Pt), iridium (iridium, Ir), palladium (palladium) or an alloy thereof, or palladium Cobalt (palladium-cobalt, PdCo) alloy, palladium-nickel (palladium-nickel, PdNi) alloy or nickel-phosphorus (nickel-phosphor, NiP) alloy, nickel-manganese (nickel-manganese, NiMn), nickel-cobalt (nickel-cobalt, NiCo ) or a nickel-tungsten (nickel-tungsten, NiW) alloy, and the second metal ( 230 ) may be a metal selected from copper (Cu), silver (Ag), and gold (Au). Here, in addition to the above-mentioned metals or alloys, the first metal ( 210 ) and the second metal ( 230 ) may be composed of other metals or alloys, and are not limited to the above-mentioned exemplary materials.

In order to improve the wear resistance of the conductive contact pin (100), the lowermost layer and the uppermost layer of the first laminated part (110) and the second laminated part (120) are formed of the first metal (210). A plurality of metal layers can be laminated alternately in the order of the first metal (210), the second metal (230), and the first metal (210) starting from the bottom layer. The plurality of metal layers may be formed of a minimum of three layers, and may be formed of odd-numbered layers of more than three layers. However, the number of metal layers is not limited to this. The first layered part (110) and the second layered part (120) can be formed by alternately layering the first metal (210) and the second metal (230). In this case, the first layered part (110) and the second layered part In the part (120), the number of layers of alternate lamination of the first metal (210) and the second metal (230) is different from each other.

The length of the second buildup part (120) has a range of not less than 100 μm and not more than 400 μm. The conductive contact pin (100) can be inserted into the guide plate of the probe card for use, and in this case, the first end (102) of the conductive contact pin (100) protrudes to the lower part of the guide plate (lower guide plate). In this state, if the conductive contact pin (100) is used many times over a long period of time, foreign matter will adhere to the side of the first end (102), and in order to remove it, the process of grinding the first end (102) is performed. Process. Due to the grinding process of the first end portion (102), the length of the conductive contact pin (100) is shortened. The protruding length of the conductive contact pin (100) to the lower part of the guide plate (lower guide plate) is preferably in the range of 100 μm to 400 μm. If the protruding length is less than 100 μm due to the grinding process, the conductive contact pin ( 100) will be replaced with new ones. Since the length of the second laminated part (120) is in the range of 100 μm to 400 μm, even if the first end part (102) is polished within the range of 100 μm to 400 μm, the second The laminated part (120) is present at the first end part (102), so the cross-sectional shape of the conductive contact pin (100) can also be kept in an initial state.

During the polishing process, in the case that the second build-up part ( 120 ) no longer exists, it is preferably replaced with a new conductive contact pin ( 100 ). The remaining degree of the second build-up part (120) can be confirmed by the appearance of the second build-up part (120) exposed on the side of the conductive contact pin (100).

The conductive contact pin ( 100 ) according to the first embodiment is manufactured by plating the first laminated part ( 110 ) and the second laminated part ( 120 ) respectively by using a mold. Below, with reference to Figure 2(a)-Figure 2(d) to Figure 7(a)-Figure 7(d), the conductive contact pin (100) according to the preferred first embodiment of the present invention The manufacturing method will be described.

Referring to (a) of Fig. 2-(d) of Fig. 2, (a) of Fig. 2 is a plan view of a mold (10) having a first internal space (11), and (b) of Fig. 2 is (a) of Fig. 2 ) A-A' section view, Figure 2(c) is the BB' section view of Figure 2(a), and Figure 2(d) is the CC' section view of Figure 2(a) picture.

Referring to Fig. 2(a) - Fig. 2(d), a first internal space (11) is formed in the mold (10), and a seed layer (20) is arranged in the lower part of the mold (10).

The mold (10) can be formed by anodized film, photoresist, silicon wafer or similar materials. However, it is preferable that the mold (10) can be formed of anodized film material. The anodized film means a film formed by anodizing a metal as a base material, and the pores mean pores formed during the process of anodizing a metal to form an anodized film. For example, when the metal as the base material is aluminum (Al) or an aluminum alloy, anodic oxidation of the base material forms an anodized film made of aluminum oxide (Al ₂ O ₃ ) on the surface of the base material. The anodized film formed as described above is vertically divided into a barrier layer in which pores are not formed, and a porous layer in which pores are formed. In the base material on which the anodized film having the barrier layer and the porous layer is formed on the surface, if the base material is removed, only the anodized film made of aluminum oxide (Al ₂ O ₃ ) remains. The anodized film can be formed by removing the barrier layer formed when anodizing is performed and the pores penetrate along the upper and lower sides, or by leaving the barrier layer formed when anodizing as it is and leaving the upper and lower ends of the pores A closed structure is formed.

The anodized film has a thermal expansion coefficient of 2 ppm/°C to 3 ppm/°C. Therefore, in the case of being exposed in a high-temperature environment, thermal deformation due to temperature is small. Therefore, even if the manufacturing environment of the conductive contact pin (100) is a high temperature environment, the precise conductive contact pin (100) can be manufactured without thermal deformation.

In the aspect that the conductive contact pin (100) according to the preferred embodiment of the present invention is manufactured by using the mold (10) made of anodized film material instead of the photoresist mold, it can realize the shape that was once limited when realized as a photoresist mold The precision and the effect of fine shape.

A seed crystal layer (20) is arranged on the lower surface of the mold (10). The seed crystal layer (20) can be arranged on the lower surface of the mold (10) before the mold (10) forms the first internal space (11). On the other hand, a support substrate (not shown) is formed at the lower portion of the mold (10) to improve the operability of the mold (10). In addition, in this case, the seed layer (20) may also be formed on the upper surface of the supporting substrate (not shown) and the mold (10) formed with the first internal space (11) may be bonded to the supporting substrate (not shown). ) to use. The seed layer ( 20 ) can be formed of copper (Cu) material, and can be formed by a deposition method. When the second build-up part (120) is formed by electroplating, the seed layer (20) is used to improve the plating quality of the second build-up part (120).

The first internal space (11) can be formed by wet etching the mold (10) made of anodized film. To this end, a photoresist can be arranged on the upper surface of the mold (10) and patterned, and then the anodic oxide film in the area where the opening is patterned reacts with the etching solution to form the first internal space (11). To illustrate specifically, the exposure process and the development process may be performed after disposing a photosensitive material on the upper surface of the mold (10) before forming the first internal space (11). The photosensitive material can form an opening area through an exposure process and a development process, and at least a part is patterned and removed. The mold (10) made of anodic oxide film performs an etching process by using a patterning process to remove the opening area of the photosensitive material, and uses an etching solution to remove the anodic oxide film at a position corresponding to the internal space (11), thereby forming a second an inner space (11).

Next, referring to Fig. 3(a)-Fig. 3(d), Fig. 3(a) is a plan view of the mold (10) forming the second build-up part (120) in the first internal space (11), Fig. 3 (b) is a sectional view of AA' of (a) of FIG. 3 , (c) of FIG. 3 is a sectional view of BB' of (a) of FIG. 3 , and (d) of FIG. 3 is a sectional view of FIG. (a) C-C' profile.

A step of performing an electroplating process in the first internal space (11) of the mold (10) to form the second laminated part (120). Multiple electroplating processes are performed to stack multiple metal layers in the thickness direction of the conductive contact pin (100) to form the second stacked part (120). The second laminated part (120) is made of rhodium (rhodium, Rh), platinum (platinum, Pt), iridium (iridium, Ir), palladium (palladium) or alloys thereof, or palladium-cobalt (palladium-cobalt, PdCo) alloy, palladium-nickel (palladium-nickel, PdNi) alloy or nickel-phosphorus (nickel-phosphor, NiP) alloy, nickel-manganese (nickel-manganese, NiMn), nickel-cobalt (nickel-cobalt, NiCo) or nickel-tungsten (nickel-tungsten , NiW) alloy, copper (Cu), silver (Ag), gold (Au) at least two or more metal laminates to configure. For example, the first metal ( 210 ) made of palladium-cobalt (palladium-cobalt, PdCo) alloy and the second metal ( 230 ) made of copper (Cu) can be alternately laminated. Here, the first metal (210) can improve the wear resistance of the first end (102) of the conductive contact pin (100), and the second metal (230) can improve the wear resistance of the first end of the conductive contact pin (100). (102) conductivity.

Upon completion of the plating process, a planarization process may be performed. The metal protruding toward the upper surface of the mold ( 10 ) is removed and planarized by a chemical mechanical polishing (CMP) process.

Then referring to (a) of Fig. 4-(d) of Fig. 4, (a) of Fig. 4 is a plan view of a mold (10) that removes a part of the mold (10) to form a second internal space (12), and Fig. 4 (b) is the AA' sectional view of (a) in FIG. 4, (c) of FIG. 4 is the BB' sectional view of (a) in FIG. 4, and (d) of FIG. 4 is the (a) C-C' section view.

A process of removing a portion of the mold (10) is performed. A portion of the mold (10) is removed to form a second interior space (12) in the mold (10). To illustrate specifically, an exposure process and a development process may be performed after the photosensitive material is disposed on the upper surface of the mold (10). The photosensitive material can form an opening area through an exposure process and a development process, and at least a part is patterned and removed. An etching process is performed by removing the opening area of the photosensitive material through a patterning process, and a part of the mold (10) is removed using an etching solution to form a second internal space (12).

The mold (10) is exposed on three sides of the second internal space (12), and the second buildup part (120) is exposed on one side.

Next, referring to Fig. 5(a)-Fig. 5(d), Fig. 5(a) is a plan view of the mold (10) forming the first laminate part (110) in the second internal space (12), Fig. 5 (b) is the AA' sectional view of (a) in FIG. 5 , (c) of FIG. 5 is the BB' sectional view of (a) in FIG. 5 , and (d) of FIG. 5 is the sectional view of FIG. (a) C-C' section view.

A step of forming a first buildup part (110) is performed. The first build-up part (110) is formed in the second internal space (12) formed in the previous step by using an electroplating process.

The first build-up part (110) is integrated with the second build-up part (120) produced in the previous step. As explained above, the second build-up part (120) is exposed on one side of the second internal space (12), and the first build-up part (110) and the second build-up part (120) are integrated on the side.

The first laminated part (110) is made of rhodium (rhodium, Rh), platinum (platinum, Pt), iridium (iridium, Ir), palladium (palladium) or alloys thereof, or palladium-cobalt (palladium-cobalt, PdCo) alloy, palladium-nickel (palladium-nickel, PdNi) alloy or nickel-phosphorus (nickel-phosphor, NiP) alloy, nickel-manganese (nickel-manganese, NiMn), nickel-cobalt (nickel-cobalt, NiCo) or nickel-tungsten (nickel-tungsten , NiW) alloy, copper (Cu), silver (Ag), gold (Au) at least two or more metal laminates to configure. For example, the first metal ( 210 ) made of palladium-cobalt (palladium-cobalt, PdCo) alloy and the second metal ( 230 ) made of copper (Cu) can be alternately laminated. Here, the first metal (210) can improve the elastic deformation of the main body (101) of the conductive contact pin (100), and the second metal (230) can improve the conduction of the main body (101) of the conductive contact pin (100). sex.

FIG. 6 is an enlarged view of a dotted line portion (Z) in FIG. 5( a ) to FIG. 5( d ). FIG. 6 is a diagram more specifically showing a formation structure of a metal layer according to the plating process of FIG. 5( a )- FIG. 5( d ). For convenience of description, the "└" formation structure of the metal layer shown in FIG. 6 , FIG. 8( a ), and FIG. 8( b ) is omitted in other figures of the first embodiment.

Since the first build-up part (110) is formed after the second build-up part (120) is arranged, when the first build-up part (110) is formed by plating, the lower seed layer (20) and the second build-up part (120) ) inner sidewall (122) is a seed crystal functional layer grown by plating. Therefore, the first end side vertical part (111a) is formed in the lowest layer (111) of the first buildup part (110), and the first end side vertical part (111a) is also continuously formed in the second buildup part The inner side wall (122) of (120) is arranged to extend in the vertical direction along the inner side wall (122) of the second buildup part (120). The lowermost layer ( 111 ) of the first laminated part ( 110 ) and the lowermost layer ( 121 ) of the second laminated part ( 120 ) are not formed to have the same thickness as each other, but the lowermost layer ( 111 ) of the first laminated part ( 110 ) and The lowermost layer (121) of the second laminated part (120) is formed of the same material as each other.

After forming the lowermost layer (111) of the first build-up part (110) including the first end-side vertical portion (111a), if the subsequent plating process is performed, the first end-side vertical portion (111a) includes The lowest layer (111) of the first build-up part (110) is a seed crystal functional layer grown by plating, which is arranged on the lowermost layer (111) of the first build-up part (110) including the vertical part (111a) on the first end side The metal layer on the upper surface of the first end part (102) has a "└" character side profile. If the subsequent plating process is performed, a plurality of metal layers with the side profile of the word "└" are formed on the first end (102) side of the first build-up part (110) to constitute the first build-up part (110).

The lowermost layer (121) of the second laminated part (120) is formed of the same metal material as the lowermost layer (111) of the first laminated part (110), and the lowermost layer (111) of the first laminated part (110) is also continuously It is formed on the inner side wall (122) of the second build-up part (120). In the case where the first metal (210) and the second metal (230) are alternately laminated to form a conductive contact pin, the second metal (230) of the first layered part (110) and the second layer of the second layered part (120) The first metal (210) constituting the lowermost layer (111) of the conductive contact pin (100) is disposed between the metals (230). The first metal (210) is configured to extend in a vertical direction from the lower surface to the upper surface of the conductive contact pin (100).

Since the lowest layer (111) of the first laminated part (110), the lowest layer (121) of the second laminated part (120), the uppermost layer (123) of the second laminated part (120), the second laminated part (120) The middle layer (125) and the vertical part (111a) on the first end side are formed of the first metal (210) of the same material, so that the second laminated part (120) can be prevented from being peeled off from the first laminated part (110) damage.

In addition, by forming a plurality of metal layers with the side profile of the word "└" on the first end (102) side of the first build-up part (110), it is possible to prevent damage to the first end (102) side. Shear failure is damaged.

On the other hand, the second build-up part ( 120 ) may also be formed after first disposing the first build-up part ( 110 ), which is included in the technical idea of the present invention. In this case, the inner sidewall of the first build-up part (110) becomes a seed crystal functional layer for plating growth when the second build-up part (120) is formed. However, as in the embodiment of the present invention, according to the configuration in which the second build-up part (120) constituting the first end part (102) is formed first, and then the first build-up part (110) constituting the main body part (101) is formed, due to the configuration Since the metal layer of the second buildup part (120) is formed in a planar form, it is advantageous in that the electrical or physical properties of the first end part (102) can be made uniform.

Referring next to Figure 7 (a)-Figure 7 (d), Figure 7 (a) is a plan view of the conductive contact pin (100), Figure 7 (b) is Figure 7 (a) AA' 7(c) is a BB' sectional view of FIG. 7(a), and FIG. 7(d) is a CC' sectional view of FIG. 7(a).

A process of removing the mold (10) and the seed layer (20) is performed after the previous steps. When the mold ( 10 ) is made of anodized film material, the mold ( 10 ) is removed by using a solution that selectively reacts with the material of the anodized film. In addition, when the seed crystal layer ( 20 ) is made of copper (Cu), the seed crystal layer ( 20 ) is removed using a solution that selectively reacts with copper (Cu).

Fig. 8(a) is a perspective view of the front side of the conductive contact pin (100), that is, the first end part (102) according to a preferred first embodiment of the present invention, and Fig. 8(b) is a comparison according to the present invention A perspective view of the back side of the conductive contact pin (100), that is, the second end portion (103) of the preferred first embodiment.

There is a difference in the following aspects: the metal layer of the second end part (103) is a configuration that is continuously arranged on the same horizontal line as the metal layer of the first layered part (110) constituting the main body part (101), and vice versa. The second build-up part (120) at the one end part (102) has a structure not arranged on the same horizontal line as the metal layer constituting the first build-up part (110).

Referring to Fig. 8(a) and Fig. 8(b), the second layered part (120) is in accordance with the first metal (210), the second metal (230), the first metal (210) from the lower surface to the upper surface direction. , the second metal (230) and the first metal (210) are sequentially stacked five metal layers to form a structure, the first layered part (110) is in accordance with the first metal (210), the second metal (230), the first Metal (210), Second Metal (230), First Metal (210), Second Metal (230), First Metal (210), Second Metal (230), First Metal (210), Second Metal ( 230 ), first metal ( 210 ), second metal ( 230 ) and first metal ( 210 ) are sequentially laminated to form a structure consisting of thirteen metal layers.

Although the thicknesses between the metal layers constituting the first buildup part (110) are shown as the same thickness in the figure, the thicknesses between the metal layers constituting the first buildup part (110) may be different from each other. Among the metal layers constituting the first buildup part (110), any one metal layer may be formed thicker or thinner than the other metal layers. In addition, although the thicknesses between the metal layers constituting the second buildup part (110) are shown as the same thickness in the figure, the thicknesses between the metal layers constituting the second buildup part (120) may be different from each other. Among the metal layers constituting the first buildup part (110), any one metal layer may be formed thicker or thinner than the other metal layers.

The first end (102) of the conductive contact pin (100) may be formed in a shape with a cross-sectional area decreasing toward the end thereof. However, even in this case, the laminated structure of the second laminated part ( 120 ) is maintained as it is.

Second Embodiment Next, a second embodiment according to the present invention will be described. However, in the embodiments described below, compared with the above-mentioned first embodiment, the description will focus on the characteristic components, and the description of the same or similar components as the first embodiment will be omitted as much as possible.

Hereinafter, the conductive contact pin (100) according to the preferred second embodiment of the present invention will be described with reference to Fig. 9(a), Fig. 9(b) to Fig. 17(a), Fig. 17(b) . Figure 9(a) is a front perspective view of a conductive contact pin (100) according to a preferred second embodiment of the present invention, and Figure 9(b) is a conductive contact pin (100) according to a preferred second embodiment of the present invention ( 100) rear perspective view, Figure 10 (a) - Figure 10 (e) to Figure 16 (a) - Figure 16 (e) is a conductive contact pin according to a preferred second embodiment of the present invention (100) of the manufacturing method, Figure 17 (a) is a perspective view of the first end of the conductive contact pin (100) according to the preferred second embodiment of the present invention, Figure 17 (b) is according to the present invention A perspective view of the second end of the conductive contact pin (100) of the preferred second embodiment of the invention.

The conductive contact pin (100) according to the preferred second embodiment of the present invention is the same as that according to the first embodiment in that the second end (103) of the conductive contact pin (100) is additionally equipped with a third laminated part (130). There are differences in the composition of the conductive contact pins (100). Since the configuration of the second layered part ( 120 ) disposed at the first end part ( 102 ) according to the second embodiment is the same as that of the first embodiment, a detailed description thereof will be omitted below.

The conductive contact pin (100) includes: a main body (101), a first build-up part (110) including a plurality of metal build-up layers; a first end part (102), a second build-up part including a plurality of metal build-up layers (120); and a second end portion (103) including a third buildup portion (130) of a plurality of metal buildup layer configurations. The first build-up part (110), the second build-up part (120), and the third build-up part (130) are formed by different plating processes.

At least one metal layer constituting the first build-up part (110) and at least one metal layer constituting the third build-up part (130) are not arranged on the same horizontal line.

The number of laminated layers of the third laminated part (130) arranged on the second end part (103) of the conductive contact pin (100) is different from the number of laminated layers of the first laminated part (110) arranged on the main body part (101). Preferably, the number of laminated layers of the third laminated part (130) arranged at the second end part (103) of the conductive contact pin (100) is lower than the number of laminated layers of the first laminated part (110) arranged at the main body part (101) The number of layers with a small number of layers is formed.

By the laminated structure of the first laminated part (110), the second laminated part (120) and the third laminated part (130), the main part (101) and the first end part ( 102) and the second end portion (103) are different from each other in physical or electrical characteristics. The content of the metal with high electrical conductivity contained in the main body (101) of the conductive contact pin (100) can be increased, and the metal with high wear resistance contained in the first end (102) of the conductive contact pin (100) can be increased. The content of the metal can be increased, and the content of the metal with high electrical conductivity contained in the second end portion (103) of the conductive contact pin (100) can be increased. Thereby, the current carrying capacity (Current Carrying Capacity) of the main body part (101) can be improved, the wear resistance of the first end part (102) can be improved, and the second end part (103) can be prevented from generating arc.

The plurality of metal layers may be composed of a first metal (210) and a second metal (230). The first metal (210) is a metal having relatively high wear resistance or hardness compared to the second metal (230), and the second metal (230) may be formed of a metal having relatively high electrical conductivity compared to the first metal (210) . The first metal (210) is preferably a metal selected from the following: rhodium (rhodium, Rh), platinum (platinum, Pt), iridium (iridium, Ir), palladium (palladium) or an alloy thereof, or palladium Cobalt (palladium-cobalt, PdCo) alloy, palladium-nickel (palladium-nickel, PdNi) alloy or nickel-phosphorus (nickel-phosphor, NiP) alloy, nickel-manganese (nickel-manganese, NiMn), nickel-cobalt (nickel-cobalt, NiCo ) or a nickel-tungsten (nickel-tungsten, NiW) alloy, and the second metal ( 230 ) may be a metal selected from copper (Cu), silver (Ag), and gold (Au). Here, in addition to the above-mentioned metals or alloys, the first metal ( 210 ) and the second metal ( 230 ) may be composed of other metals or alloys, and are not limited to the above-mentioned exemplary materials.

In order to improve the wear resistance of the conductive contact pin (100), the lowest layer and the uppermost layer of the first build-up part (110) and the third build-up part (130) are formed of the first metal (210). A plurality of metal layers can be laminated alternately in the order of the first metal (210), the second metal (230), and the first metal (210) starting from the bottom layer. The plurality of metal layers may be formed of a minimum of three layers, and may be formed of odd-numbered layers of more than three layers. However, the number of metal layers is not limited to this. The first build-up part (110) and the third build-up part (120) can be formed by alternately laminating the first metal (210) and the second metal (230). In this case, the first build-up part (110) and the third build-up part In the part (130), the numbers of layers of alternate lamination of the first metal (210) and the second metal (230) are different from each other.

The length of the third buildup part (130) has a range of not less than 100 μm and not more than 400 μm. Since the length of the third layered portion (130) is in the range of 100 μm to 400 μm, even if the second end portion (103) is polished within the range of 100 μm to 400 μm, the third Since the laminated part (130) is present at the second end part (103), the cross-sectional shape of the conductive contact pin (100) can also be kept in an initial state. When performing the polishing process, if the third build-up part ( 130 ) no longer exists, it is preferably replaced with a new conductive contact pin ( 100 ). The remaining degree of the third build-up part (130) can be confirmed by the appearance of the third build-up part (130) exposed on the side of the conductive contact pin (100).

The conductive contact pin (100) according to the second embodiment is manufactured by plating the first layered part (110), the second layered part (120) and the third layered part (130) respectively by using a mold. Below, with reference to Figure 10 (a) - Figure 10 (e) to Figure 16 (a) - Figure 16 (e), the conductive contact pin (100) according to the preferred second embodiment of the present invention The manufacturing method will be described.

Referring to (a) of Figure 10-(e) of Figure 10, (a) of Figure 10 is a plan view of a mold (10) having a first internal space (11), and (b) of Figure 10 is (a) of Figure 10 ), Figure 10 (c) is the BB' section view of Figure 10 (a), Figure 10 (d) is the CC' section view of Figure 10 (a) , and (e) of FIG. 10 is a DD' cross-sectional view of (a) of FIG. 10 .

Referring to Fig. 10(a) - Fig. 10(e), the first internal space (11) is formed in the mold (10), and the seed layer (20) is arranged in the lower part of the mold (10).

In the aspect that the conductive contact pin (100) according to the preferred embodiment of the present invention is manufactured by using the mold (10) made of anodized film material instead of the photoresist mold, it can realize the shape that was once limited when realized as a photoresist mold The precision and the effect of fine shape.

A seed crystal layer (20) is arranged on the lower surface of the mold (10). The seed crystal layer (20) can be arranged on the lower surface of the mold (10) before the mold (10) forms the first internal space (11). On the other hand, a support substrate (not shown) is formed at the lower portion of the mold (10) to improve the operability of the mold (10). In addition, in this case, the seed layer (20) may also be formed on the upper surface of the supporting substrate (not shown) and the mold (10) formed with the first internal space (11) may be bonded to the supporting substrate (not shown). ) to use. The seed layer ( 20 ) can be formed of copper (Cu) material, and can be formed by a deposition method. When the second build-up part (120) is formed by electroplating, the seed layer (20) is used to improve the plating quality of the second build-up part (120).

The first internal space (11) can be formed by wet etching the mold (10) made of anodized film. To this end, a photoresist can be arranged on the upper surface of the mold (10) and patterned, and then the anodic oxide film in the area where the opening is patterned reacts with the etching solution to form the first internal space (11). To illustrate specifically, the exposure process and the development process may be performed after disposing a photosensitive material on the upper surface of the mold (10) before forming the first internal space (11). The photosensitive material can form an opening area through an exposure process and a development process, and at least a part is patterned and removed. The mold (10) made of anodic oxide film performs an etching process by using a patterning process to remove the opening area of the photosensitive material, and uses an etching solution to remove the anodic oxide film at a position corresponding to the internal space (11), thereby forming a second an inner space (11).

Next, referring to Fig. 11(a)-Fig. 11(e), Fig. 11(a) is a plan view of the mold (10) forming the second laminate part (120) in the first internal space (11), Fig. 11 (b) is the AA' sectional view of (a) in FIG. 11, (c) of FIG. 11 is the BB' sectional view of (a) in FIG. 11, and (d) of FIG. 11 is the (a) is a sectional view of CC', and (e) of FIG. 11 is a sectional view of DD' of (a) of FIG. 11 .

A step of performing an electroplating process in the first internal space (11) of the mold (10) to form the second laminated part (120). Multiple electroplating processes are performed to stack multiple metal layers in the thickness direction of the conductive contact pin (100) to form the second stacked part (120). The second laminated part (120) is made of rhodium (rhodium, Rh), platinum (platinum, Pt), iridium (iridium, Ir), palladium (palladium) or alloys thereof, or palladium-cobalt (palladium-cobalt, PdCo) alloy, palladium-nickel (palladium-nickel, PdNi) alloy or nickel-phosphorus (nickel-phosphor, NiP) alloy, nickel-manganese (nickel-manganese, NiMn), nickel-cobalt (nickel-cobalt, NiCo) or nickel-tungsten (nickel-tungsten , NiW) alloy, copper (Cu), silver (Ag), gold (Au) at least two or more metal laminates to configure. For example, the first metal ( 210 ) made of palladium-cobalt (palladium-cobalt, PdCo) alloy and the second metal ( 230 ) made of copper (Cu) can be alternately laminated to form. Here, the first metal (210) can improve the wear resistance of the first end (102) of the conductive contact pin (100), and the second metal (230) can improve the wear resistance of the first end of the conductive contact pin (100). (102) conductivity. Thereby, compared with the case where only the first metal (210) is formed, the current allowable capacity of the conductive contact pin (100) can be increased.

Upon completion of the plating process, a planarization process may be performed. Metal protruding towards the upper surface of the mold (10) is removed and planarized by a chemical mechanical polishing (CMP) process.

Next, referring to (a)-(e) of FIG. 12, (a) of FIG. 12 is a plan view of a mold (10) forming a third build-up part (130) in a third internal space, and (b) of FIG. 12 It is the AA' sectional view of Fig. 12(a), Fig. 12(c) is the BB' sectional view of Fig. 12(a), and Fig. 12(d) is the sectional view of Fig. 12(a) CC' sectional view, and (e) of FIG. 12 is a DD' sectional view of (a) in FIG. 12 .

A process of removing a part of the mold (10) is performed to form a third inner space in the mold (10). The third internal space is formed at a position corresponding to the second end portion (103), and can be formed by the same process as that for forming the first internal space (11) above.

A step of performing an electroplating process in the third inner space of the mold (10) to form a third buildup part (130). Multiple electroplating processes are performed to stack multiple metal layers in the thickness direction of the conductive contact pin (100) to form a third stacked part (130). The third laminated part (130) is made of rhodium (rhodium, Rh), platinum (platinum, Pt), iridium (iridium, Ir), palladium (palladium) or alloys thereof, or palladium-cobalt (palladium-cobalt, PdCo) alloy, palladium-nickel (palladium-nickel, PdNi) alloy or nickel-phosphorus (nickel-phosphor, NiP) alloy, nickel-manganese (nickel-manganese, NiMn), nickel-cobalt (nickel-cobalt, NiCo) or nickel-tungsten (nickel-tungsten , NiW) alloy, copper (Cu), silver (Ag), gold (Au) at least two or more metal laminates to configure. For example, the first metal ( 210 ) made of palladium-cobalt (PdCo) alloy and the second metal ( 230 ) made of copper (Cu) and gold (Au) can be formed by lamination. The layered structure shown in (a)-(e) of Figure 12 is based on palladium-cobalt (palladium-cobalt, PdCo) alloy, copper (Cu), gold (Au), copper (Cu) and palladium-cobalt ( palladium-cobalt, PdCo) alloy sequential layered structure. Here, the first metal (210) can improve the wear resistance of the second end (102) of the conductive contact pin (100), and the second metal (230) can improve the wear resistance of the second end of the conductive contact pin (100). (102) conductivity. In particular, by containing gold (Au) at the center, it is possible to more effectively prevent arcing at the second end (103).

Upon completion of the plating process, a planarization process may be performed. Metal protruding towards the upper surface of the mold (10) is removed and planarized by a chemical mechanical polishing (CMP) process.

Referring next to (a) of Figure 13-(e) of Figure 13, (a) of Figure 13 is a plan view of a mold (10) that removes a part of the mold (10) to form a second internal space (12), and of Figure 13 (b) is the AA' sectional view of (a) in FIG. 13, (c) of FIG. 13 is the BB' sectional view of (a) in FIG. 13, and (d) of FIG. 13 is ( a) The CC' sectional view, and FIG. 13( e ) is the DD' sectional view of FIG. 13( a ).

A process of removing a portion of the mold (10) is performed. A portion of the mold (10) is removed to form a second interior space (12) in the mold (10). To illustrate specifically, an exposure process and a development process may be performed after the photosensitive material is disposed on the upper surface of the mold (10). The photosensitive material can form an opening area through an exposure process and a development process, and at least a part is patterned and removed. An etching process is performed by removing the opening area of the photosensitive material through a patterning process, and a part of the mold (10) is removed using an etching solution, thereby forming a second internal space (12).

The mold (10) is exposed on two sides of the second internal space (12), and the second build-up part (120) and the third build-up part (130) are exposed on two sides.

Next, referring to Fig. 14(a)-Fig. 14(e), Fig. 14(a) is a plan view of the mold (10) forming the first laminate part (110) in the second internal space (12), and Fig. 14 (b) is the AA' sectional view of (a) of FIG. 14, (c) of FIG. 14 is the BB' sectional view of (a) of FIG. 14, and (d) of FIG. 14 is ( a) is a cross-sectional view of CC', and (e) of FIG. 14 is a cross-sectional view of DD' of (a) of FIG. 14 .

A step of forming a first buildup part (110) is performed. The first build-up part (110) is formed in the second internal space (12) formed in the previous step by using an electroplating process.

The first build-up part (110) is integrated with the second build-up part (120) and the third build-up part (130) produced in the previous step. As explained above, the second build-up part (120) is exposed on one side of the second internal space (12), and the first build-up part (110) and the second build-up part (120) are integrated on the one side. In addition, the third build-up part (130) is exposed on the other side of the second internal space (12), and the first build-up part (110) and the third build-up part (130) are integrated on the other side.

The first laminated part (110) is made of rhodium (rhodium, Rh), platinum (platinum, Pt), iridium (iridium, Ir), palladium (palladium) or alloys thereof, or palladium-cobalt (palladium-cobalt, PdCo) alloy, palladium-nickel (palladium-nickel, PdNi) alloy or nickel-phosphorus (nickel-phosphor, NiP) alloy, nickel-manganese (nickel-manganese, NiMn), nickel-cobalt (nickel-cobalt, NiCo) or nickel-tungsten (nickel-tungsten , NiW) alloy, copper (Cu), silver (Ag), gold (Au) at least two or more metal laminates to configure. For example, it can be formed by alternate lamination of the first metal ( 210 ) made of palladium-cobalt (PdCo) alloy and the second metal ( 230 ) made of copper (Cu). Here, the first metal (210) can improve the elastic deformation of the main body (101) of the conductive contact pin (100), and the second metal (230) can improve the conduction of the main body (101) of the conductive contact pin (100). sex.

FIG. 15( a ) and FIG. 15( b ) are enlarged views of dotted line portions ( Z1 , Z2 ) in FIG. 14( a ) to FIG. 14( e ). FIG. 15( a ) and FIG. 15( b ) are diagrams showing more specifically the formation structure of the metal layer according to the plating process of FIG. 14( a ) to FIG. 14( e ). For the convenience of description, the "└" and "┘" formation structures of the metal layer shown in Fig. 15(a), Fig. 15(b), Fig. 17(a), Fig. 17(b) will be described in the second Other figures of the examples are omitted.

Since the first build-up part (110) is formed after the second build-up part (120) and the third build-up part (130) are arranged, when the first build-up part (110) is formed by plating, the lower seed layer (20) , the inner side wall (122) of the second build-up part (120) and the inner side wall (132) of the third build-up part (130) are seed crystal functional layers grown by plating. Thus, the lowest layer (111) of the first build-up part (110) is also continuously formed on the inner side wall (122) of the second build-up part (120) and the inner side wall (132) of the third build-up part (130). The lowest layer (111) of the first build-up part (110) has a first end-side vertical part (111a) extending in the vertical direction along the inner side wall (122) of the second build-up part (120), and has a The inner side wall (132) of the third build-up part (130) is a second end side vertical part (111b) extending in the vertical direction.

The lowest layer ( 111 ) of the first laminated part ( 110 ), the lowest layer ( 121 ) of the second laminated part ( 120 ) and the lowest layer ( 131 ) of the third laminated part ( 130 ) are not formed to have the same thickness as each other, but The lowermost layer (111) of the first laminated part (110), the lowermost layer (121) of the second laminated part (120) and the third laminated part (130) are formed of the same material as each other.

After forming the lowermost layer (111) of the first buildup part (110) including the first end-side vertical part (111a) and the second end-side vertical part (111b), if the subsequent plating process is performed, it includes The lowermost layer (111) of the first stacked part (110) of the vertical part (111a) on the first end side (111a) and the vertical part (111b) on the second end side is the seed crystal functional layer grown by plating, so it is arranged on the The metal layer on the upper surface of the lowermost layer (111) of the first stacked part (110) of the one end side vertical part (111a) and the second end side vertical part (111b) has a The profile of the character "└", and the profile of the character "┘" on the side of the second end (103). If the subsequent plating process is performed, a plurality of metal layers having a side surface of the word "└" are formed on the first end (102) side of the first build-up part (110) to constitute the first build-up part (110).

The lowermost layer (121) of the second laminated part (120) and the lowermost layer (131) of the third laminated part (130) are formed of the same metal material as the lowermost layer (111) of the first laminated part (110). The lowest layer (111) of the buildup part (110) is also continuously formed on the inner sidewall (122) of the second buildup part (120) and the inner sidewall (132) of the third buildup part (120). In the case where the first metal (210) and the second metal (230) are laminated to form a conductive contact pin, the second metal (230) of the first layered part (110) and the second metal of the second layered part (120) The first metal (210) constituting the lowermost layer (111) of the conductive contact pin (100) is arranged between (230). The first metal (210) is configured to extend in a vertical direction from the lower surface to the upper surface of the conductive contact pin (100). In addition, between the second metal (230) of the first build-up part (110) and the second metal (230) of the third build-up part (130), the bottom layer (111) of the conductive contact pin (100) is arranged. First Metals (210). The first metal (210) is configured to extend in a vertical direction from the lower surface to the upper surface of the conductive contact pin (100).

Since the lowest layer (111) of the first laminated part (110), the lowest layer (121) of the second laminated part (120), the uppermost layer (123) of the second laminated part (120), the third laminated part (130) The lowermost layer (131) of the third buildup part (120) and the uppermost layer (133) of the third buildup part (120) are formed of the first metal (210) of the same material, so that the second buildup part (120) and the third buildup part (130) can be prevented from ) is peeled off from the first lamination part (110) and is damaged.

In addition, by forming a plurality of metal layers with the side profile of the word "└" on the first end (102) side of the first build-up part (110), it is possible to prevent damage to the first end (102) side. Shear failure is damaged, and by forming a plurality of metal layers with the side surface of the character "┘" on the second end (103) side of the first laminated part (110), it can prevent the second end ( 103) The side is damaged due to shear failure.

On the other hand, the first build-up part (110) may also be arranged first, and then the second build-up part (120) and the third build-up part (130) are formed thereafter. In this case, the inner sidewall of the first build-up part (110) becomes a seed crystal functional layer for plating growth when forming the second build-up part (120) or the third build-up part.

Referring next to Figure 16 (a)-Figure 16 (e), Figure 16 (a) is a plan view of the conductive contact pin (100), Figure 16 (b) is Figure 16 (a) AA' Section view, Figure 16 (c) is the BB' section view of Figure 16 (a), Figure 16 (d) is the CC' section view of Figure 16 (a), and Figure 16 ( e) is a DD' sectional view of (a) of FIG. 16 .

A process of removing the mold (10) and the seed layer (20) is performed after the previous steps. In the case that the mold ( 10 ) is made of anodized film material, the mold ( 10 ) is removed by using a solution that selectively reacts with the material of the anodized film. In addition, when the seed crystal layer ( 20 ) is made of copper (Cu), the seed crystal layer ( 20 ) is removed using a solution that selectively reacts with copper (Cu).

(a) of Fig. 17 is a perspective view of the front side of the conductive contact pin (100), that is, the first end (102) according to a preferred second embodiment of the present invention, and (b) of Fig. 17 is a comparative A perspective view of the back side of the conductive contact pin (100), that is, the second end portion (103) of the preferred second embodiment.

The second build-up part (120) of the first end part (102) and the metal layer constituting the first build-up part (110) are not arranged on the same horizontal line, and the third build-up part (130) of the second end part (103) and the composition The metal layers are not configured on the same horizontal line.

Referring to Fig. 17 (a) and Fig. 17 (b), the first layered part (110) is according to the first metal (210), the second metal (230), the first metal (210), the second metal (230 ), first metal (210), second metal (230), first metal (210), second metal (230), first metal (210), second metal (230), first metal (210) 1. The second metal (230) and the first metal (210) are sequentially laminated to form a structure consisting of thirteen metal layers. The second laminated part (120) and the third laminated part (130) are in accordance with the direction of the first metal (210), the second metal (230), the first metal (210), and the second metal (230) from the lower surface to the upper surface. And the first metal (210) is a structure formed by sequentially laminating five metal layers. The second metal ( 230 ) constituting the second build-up part ( 120 ) and the second metal ( 230 ) constituting the third build-up part ( 130 ) may be different from each other. For example, the second metal (230) constituting the second buildup part (120) can be copper (Cu), and the second metal (230) constituting the third buildup part (130) can be copper (Cu) and gold (Au). .

Although the thicknesses between the metal layers constituting the first buildup part (110) are shown as the same thickness in the figure, the thicknesses between the metal layers constituting the first buildup part (110) may be different from each other. Among the metal layers constituting the first buildup part (110), any metal layer may be formed thicker or thinner than the other metal layers. In addition, in the figure, the thickness between the metal layers constituting the second build-up part (110) and the third build-up part (130) is shown as the same thickness, but the second build-up part (120) and the third build-up part (130) The thickness of the metal layers can be different from each other. Among the metal layers constituting the first buildup part (110), any metal layer may be formed thicker or thinner than the other metal layers.

The first end (102) and the second end (103) of the conductive contact pin (100) can be formed by a shape whose cross-sectional area decreases toward the end. However, even in this case, the laminated structure of the second laminated part (120) and the third laminated part (130) is maintained as it is.

Third Embodiment Next, a third embodiment according to the present invention will be described. However, in the embodiments described below, compared with the above-mentioned first embodiment, the description will focus on the characteristic components, and the description of the same or similar components as the first embodiment will be omitted as much as possible.

Hereinafter, the conductive contact pin (100) according to the preferred third embodiment of the present invention will be described with reference to Fig. 18(a), Fig. 18(b) to Fig. 26(a), Fig. 26(b) . (a) of Fig. 18 is a front perspective view of a conductive contact pin (100) according to a preferred third embodiment of the present invention, and (b) of Fig. 18 is a conductive contact pin (100) according to a preferred third embodiment of the present invention ( 100) back perspective view, Figure 19 (a) - Figure 19 (e) to Figure 25 (a) - Figure 25 (e) is a conductive contact pin according to a preferred third embodiment of the present invention (100) of the manufacturing method, Figure 26 (a) is a perspective view of the first end of the conductive contact pin (100) according to the preferred third embodiment of the present invention, Figure 26 (b) is according to the present invention A perspective view of the second end of the conductive contact pin (100) of the preferred third embodiment of the invention.

The second build-up part (120) and the third build-up part (130) according to the third embodiment include: an inner extension part (310), extending toward the inner side of the conductive contact pin (100) along the length direction of the conductive contact pin (100) forming; and an outer extension part (320), extending to the outside of the conductive contact pin (100) along the length direction of the conductive contact pin (100) and protruding toward the end side of the conductive contact pin (100).

More specifically, the second build-up part (120) includes: a first inner extension part (310a), formed by extending toward the inner side of the conductive contact pin (100) along the length direction of the conductive contact pin (100); and a first outer extension part (320a), connected with the first inner extension part (310a), extending to the outside of the conductive contact pin (100) along the length direction of the conductive contact pin (100) and protruding toward the end side of the conductive contact pin (100) . In addition, the third laminated part (130) includes: a second inner extension part (310b), formed by extending toward the inner side of the conductive contact pin (100) along the length direction of the conductive contact pin (100); and a second outer extension part (320b ), connected to the second inner extension part (310b), extending to the outside of the conductive contact pin (100) along the length direction of the conductive contact pin (100) and protruding toward the end side of the conductive contact pin (100).

The outer extension part (320) of the conductive contact pin (100) has a length of not less than 100 μm and not more than 400 μm. Even if the first end portion (111) is shortened to a length between 100 μm and 400 μm due to the grinding process, the same cross-sectional structure is also achieved. With this configuration, the first end ( 111 ) can be polished within the length range of 100 μm to 400 μm for reuse.

Hereinafter, referring to Fig. 19 (a) - Fig. 19 (e) to Fig. 25 (a) - Fig. 25 (e), the conductive contact pin (100) according to the preferred third embodiment of the present invention The manufacturing method will be described.

Referring to Fig. 19 (a) - Fig. 19 (e), Fig. 19 (a) is a plan view of a mold (10) having a first internal space (11) and a third internal space (13), and Fig. 19 ( b) is the AA' sectional view of (a) in Fig. 19, (c) of Fig. 19 is the BB' sectional view of (a) in Fig. 19, and (d) of Fig. 19 is (a) of Fig. 19 ), and (e) of FIG. 19 is a DD' cross-sectional view of (a) of FIG. 19 .

Referring to Fig. 19 (a) - Fig. 19 (e), the first internal space (11) and the third internal space (13) are formed in the mold (10), and the seed layer is arranged in the lower part of the mold (10) (20).

In the aspect that the conductive contact pin (100) according to the preferred embodiment of the present invention is manufactured by using the mold (10) made of anodized film material instead of the photoresist mold, it can realize the shape that was once limited when realized as a photoresist mold The precision and fine shape effect.

A seed crystal layer (20) is arranged on the lower surface of the mold (10). The seed crystal layer (20) can be arranged on the lower surface of the mold (10) before forming the first inner space (11) and the third inner space (13) in the mold (10). On the other hand, a support substrate (not shown) is formed at the lower portion of the mold (10) to improve the operability of the mold (10). In addition, in this case, the seed layer (20) may also be formed on the upper surface of the supporting substrate (not shown) and the mold (10) with the first internal space (11) and the third internal space (13) formed therein Used in conjunction with a supporting substrate (not shown). The seed layer ( 20 ) can be formed of copper (Cu) material, and can be formed by a deposition method. When the second build-up part (120) and the third build-up part (130) are formed by electroplating, the seed layer (20) is used to improve the plating quality of the second build-up part (120) and the third build-up part (130) .

The first internal space (11) and the third internal space (13) can be formed simultaneously by performing wet etching on the mold (10) made of anodized film material. To this end, a photoresist can be placed on the upper surface of the mold (10) and patterned, and then the anodic oxide film in the area where the opening is patterned reacts with the etching solution, thereby forming the first internal space (11) And the third interior space (13). Specifically, before forming the first internal space (11) and the third internal space (13), the exposure process and the development process may be performed after disposing a photosensitive material on the upper surface of the mold (10). The photosensitive material can form an opening area through an exposure process and a development process, and at least a part is patterned and removed. The mold (10) made of anodized film material performs an etching process by using a patterning process to remove the opening area of the photosensitive material, and uses an etching solution to remove the anodized film at a position corresponding to the internal space (11), thereby simultaneously forming The first internal space (11) and the third internal space (13).

Next, referring to Fig. 20 (a) - Fig. 20 (e), Fig. 20 (a) is to form the second lamination part ( 120 ) and the second The plan view of the mold (10) of the three-layer part (130), Fig. 20 (b) is the AA' sectional view of Fig. 20 (a), Fig. 20 (c) is the B of Fig. 20 (a) -B' sectional view, (d) of FIG. 20 is a CC' sectional view of (a) of FIG. 20 , and (e) of FIG. 20 is a DD' sectional view of (a) of FIG. 20 .

A step of performing an electroplating process in the first internal space (11) and the third internal space (13) of the mold (10) to form the second build-up part (120) and the third build-up part (130). A plurality of electroplating processes are performed to laminate a plurality of metal layers in the thickness direction of the conductive contact pin (100) to form a second laminate part (120) and a third laminate part (130). The second laminated part (120) is made of rhodium (rhodium, Rh), platinum (platinum, Pt), iridium (iridium, Ir), palladium (palladium) or alloys thereof, or palladium-cobalt (palladium-cobalt, PdCo) alloy, palladium-nickel (palladium-nickel, PdNi) alloy or nickel-phosphorus (nickel-phosphor, NiP) alloy, nickel-manganese (nickel-manganese, NiMn), nickel-cobalt (nickel-cobalt, NiCo) or nickel-tungsten (nickel-tungsten , NiW) alloy, copper (Cu), silver (Ag), gold (Au) at least two or more metal laminates to configure. For example, the first metal ( 210 ) made of palladium-cobalt (palladium-cobalt, PdCo) alloy and the second metal ( 230 ) made of copper (Cu) can be alternately laminated to form. Here, the first metal (210) can improve the wear resistance of the first end (102) and the second end (103) of the conductive contact pin (100), and the second metal (230) can improve the wear resistance of the conductive contact pin (100). The electrical conductivity of the first end (102) and the second end (103) of (100). Thereby, compared with the case where only the first metal (210) constitutes the end portion, the current allowable capacity of the conductive contact pin (100) can be increased.

Upon completion of the plating process, a planarization process may be performed. Metal protruding towards the upper surface of the mold (10) is removed and planarized by a chemical mechanical polishing (CMP) process.

Referring next to (a) of Figure 21-(e) of Figure 21, (a) of Figure 21 is a plan view of a mold (10) that removes a part of the mold (10) to form a second internal space (12), and of Figure 21 (b) is the AA' sectional view of (a) of FIG. 21 , (c) of FIG. 21 is the BB' sectional view of (a) of FIG. 21 , and (d) of FIG. 21 is ( a) is a cross-sectional view of CC', and (e) of FIG. 21 is a cross-sectional view of DD' of (a) of FIG. 21 .

A process of removing a portion of the mold (10) is performed. A portion of the mold (10) is removed to form a second interior space (12) in the mold (10). To illustrate specifically, an exposure process and a development process may be performed after the photosensitive material is disposed on the upper surface of the mold (10). The photosensitive material can form an opening area through an exposure process and a development process, and at least a part is patterned and removed. An etching process is performed by removing the opening area of the photosensitive material through a patterning process, and a part of the mold (10) is removed using an etching solution to form a second internal space (12).

The second internal space (12) is formed to surround at least a part of the second build-up part (120) and the third build-up part (130).

Next, referring to Fig. 22(a)-Fig. 22(e), Fig. 22(a) is a plan view of the mold (10) forming the first laminate part (110) in the second internal space (12), and Fig. 22 (b) is the AA' sectional view of (a) of FIG. 22 , (c) of FIG. 22 is the BB' sectional view of (a) of FIG. 22 , and (d) of FIG. 22 is ( a) is a CC' sectional view, and FIG. 22(e) is a DD' sectional view of FIG. 22(a).

A step of forming a first buildup part (110) is performed. The first build-up part (110) is formed in the second internal space (12) formed in the previous step by using an electroplating process.

The first build-up part (110) is integrated with the second build-up part (120) and the third build-up part (130) produced in the previous step. As described above, the second build-up part (120) is exposed in at least a part of the side of the second internal space (12), and the first build-up part (110) and the second build-up part (120) are integrated in this part of the side . In addition, the third build-up part (130) is exposed in at least a part of the side of the second internal space (12), and the first build-up part (110) and the third build-up part (130) are integrated in the part of the side.

The first laminated part (110) is made of rhodium (rhodium, Rh), platinum (platinum, Pt), iridium (iridium, Ir), palladium (palladium) or alloys thereof, or palladium-cobalt (palladium-cobalt, PdCo) alloy, palladium-nickel (palladium-nickel, PdNi) alloy or nickel-phosphorus (nickel-phosphor, NiP) alloy, nickel-manganese (nickel-manganese, NiMn), nickel-cobalt (nickel-cobalt, NiCo) or nickel-tungsten (nickel-tungsten , NiW) alloy, copper (Cu), silver (Ag), gold (Au) at least two or more metal laminates to configure. For example, the first metal ( 210 ) made of palladium-cobalt (palladium-cobalt, PdCo) alloy and the second metal ( 230 ) made of copper (Cu) can be alternately laminated. Here, the first metal (210) can improve the elastic deformation of the main body (101) of the conductive contact pin (100), and the second metal (230) can improve the conduction of the main body (101) of the conductive contact pin (100). sex.

FIG. 23( a ) and FIG. 23( b ) are enlarged views of dotted line portions ( Z1 , Z2 ) in FIG. 22( a )- FIG. 22( e ). FIG. 23( a ) and FIG. 23( b ) are diagrams showing more specifically the formation structure of the metal layer according to the plating process of FIG. 22( a )- FIG. 22( e ). For the convenience of description, the "└" and "┘" formation structures of the metal layers shown in Fig. 23(a), Fig. 23(b), Fig. 24 and Fig. 26(a), and Fig. 26(b) will be It is omitted in other figures of the third embodiment.

Since the first build-up part (110) is formed after the second build-up part (120) and the third build-up part (130) are arranged, when the first build-up part (110) is formed by plating, the lower seed layer (20) , the inner side wall (122) of the second build-up part (120) and the inner side wall (132) of the third build-up part (130) are seed crystal functional layers grown by plating. Therefore, the lowest layer (111) of the first build-up part (110) is also continuously formed on the inner side wall (122) of the second build-up part (120) and the inner side wall (132) of the third build-up part (130). The lowest layer (111) of the first build-up part (110) has a first end-side vertical part (111a) extending in the vertical direction along the inner side wall (122) of the second build-up part (120), and has a The inner side wall (132) of the third build-up part (130) is a second end side vertical part (111b) extending in the vertical direction.

The lowest layer ( 111 ) of the first laminated part ( 110 ), the lowest layer ( 121 ) of the second laminated part ( 120 ) and the lowest layer ( 131 ) of the third laminated part ( 130 ) are not formed to have the same thickness as each other, but The lowermost layer (111) of the first laminated part (110), the lowermost layer (121) of the second laminated part (120) and the third laminated part (130) are formed of the same material as each other.

After forming the lowermost layer (111) of the first buildup part (110) including the first end-side vertical part (111a) and the second end-side vertical part (111b), if the subsequent plating process is performed, it includes The lowermost layer (111) of the first stacked part (110) of the vertical part (111a) on the first end side (111a) and the vertical part (111b) on the second end side is the seed crystal functional layer grown by plating, so it is arranged on the The metal layer on the upper surface of the lowermost layer (111) of the first stacked part (110) of the one end side vertical part (111a) and the second end side vertical part (111b) has a The profile of the character "└", and the profile of the character "┘" on the side of the second end (103). If the subsequent plating process is performed, a plurality of metal layers having a side surface of the word "└" are formed on the first end (102) side of the first build-up part (110) to constitute the first build-up part (110).

The lowermost layer (121) of the second laminated part (120) and the lowermost layer (131) of the third laminated part (130) are formed of the same metal material as the lowermost layer (111) of the first laminated part (110). The lowest layer (111) of the buildup part (110) is also continuously formed on the inner sidewall (122) of the second buildup part (120) and the inner sidewall (132) of the third buildup part (120). In the case where the first metal (210) and the second metal (230) are laminated to form a conductive contact pin, the second metal (230) of the first layered part (110) and the second metal of the second layered part (120) The first metal (210) constituting the lowermost layer (111) of the conductive contact pin (100) is arranged between (230). The first metal (210) is configured to extend in a vertical direction from the lower surface to the upper surface of the conductive contact pin (100). In addition, between the second metal (230) of the first build-up part (110) and the second metal (230) of the third build-up part (130), the bottom layer (111) of the conductive contact pin (100) is arranged. First Metals (210). The first metal (210) is configured to extend in a vertical direction from the lower surface to the upper surface of the conductive contact pin (100).

Since the lowest layer (111) of the first laminated part (110), the lowest layer (121) of the second laminated part (120), the uppermost layer (123) of the second laminated part (120), the third laminated part (130) The lowermost layer (131) of the third buildup part (120) and the uppermost layer (133) of the third buildup part (120) are formed of the first metal (210) of the same material, so that the second buildup part (120) and the third buildup part (130) can be prevented from ) is peeled off from the first lamination part (110) and is damaged.

In addition, by forming a plurality of metal layers with the side profile of the word "└" on the first end (102) side of the first build-up part (110), it is possible to prevent damage to the first end (102) side. Shear failure is damaged, and by forming a plurality of metal layers with the side surface of the character "┘" on the second end (103) side of the first laminated part (110), it can prevent the second end ( 103) The side is damaged due to shear failure.

FIG. 24 is an enlarged view of a dotted line portion ( Z3 ) in FIG. 22( a ) to FIG. 22( e ). FIG. 24 is a diagram more specifically showing a formation structure of a metal layer according to the plating process of FIG. 22( a )- FIG. 22( e ).

As shown in FIG. 24 , the metal layer constituting the first build-up part ( 110 ) is formed to surround the second build-up part ( 120 ). Likewise, the metal layer constituting the first build-up part (110) is formed to surround the third build-up part (130).

Referring next to Figure 25 (a)-Figure 25 (e), Figure 25 (a) is a plan view of the conductive contact pin (100), Figure 25 (b) is Figure 25 (a) AA' Sectional view, Figure 25 (c) is the BB' section view of Figure 25 (a), Figure 25 (d) is the CC' section view of Figure 25 (a), and Figure 25 ( e) is a DD' cross-sectional view of Fig. 16a.

A process of removing the mold (10) and the seed layer (20) is performed after the previous steps. In the case that the mold ( 10 ) is made of anodized film material, the mold ( 10 ) is removed by using a solution that selectively reacts with the material of the anodized film. In addition, when the seed crystal layer ( 20 ) is made of copper (Cu), the seed crystal layer ( 20 ) is removed using a solution that selectively reacts with copper (Cu).

(a) of Fig. 26 is a perspective view of the front side of the conductive contact pin (100), that is, the first end (102) according to a preferred third embodiment of the present invention, and (b) of Fig. 26 is a comparative A perspective view of the back side of the conductive contact pin (100), that is, the second end portion (103) of the preferred third embodiment.

The second build-up part (120) of the first end part (102) and the metal layer constituting the first build-up part (110) are not arranged on the same horizontal line, and the third build-up part (130) of the second end part (103) and the composition The metal layers are not configured on the same horizontal line.

Referring to Fig. 26 (a) and Fig. 26 (b), the first layered part (110) is according to the first metal (210), the second metal (230), the first metal (210), the second metal (230 ), first metal (210), second metal (230), first metal (210), second metal (230), first metal (210), second metal (230), first metal (210) 1. The second metal (230) and the first metal (210) are sequentially laminated to form a structure consisting of thirteen metal layers. The second laminated part (120) and the third laminated part (130) are in accordance with the direction of the first metal (210), the second metal (230), the first metal (210), and the second metal (230) from the lower surface to the upper surface. And the first metal (210) is a structure formed by sequentially laminating five metal layers.

The second laminated part (120) includes: a first inner extension part (310a), formed by extending toward the inner side of the conductive contact pin (100) along the length direction of the conductive contact pin (100); and a first outer extension part (320a), It is connected with the first inner extension part (310a), extends to the outside of the conductive contact pin (100) along the length direction of the conductive contact pin (100) and protrudes toward the end side of the conductive contact pin (100). In addition, the third laminated part (130) includes: a second inner extension part (310b), formed by extending toward the inner side of the conductive contact pin (100) along the length direction of the conductive contact pin (100); and a second outer extension part (320b ), connected to the second inner extension part (310b), extending to the outside of the conductive contact pin (100) along the length direction of the conductive contact pin (100) and protruding toward the end side of the conductive contact pin (100).

The second build-up part (120) formed by the first inner extension part (310a) and the first outer extension part (320a) is formed to be surrounded layer by layer by metal layers constituting the first build-up part (110), The third build-up part (130) formed by the second inner extension part (310b) and the second outer extension part (320b) is also formed to be surrounded layer by layer by the metal layers constituting the first build-up part (100).

Thereby, the bonding strength between the second build-up part (120), the third build-up part (130) and the first build-up part (110) can be improved, and the bonding strength between the first end part (102) and the second end part (103) can be improved. ) at the electrical or physical properties.

Fourth Embodiment Next, a fourth embodiment according to the present invention will be explained. However, in the embodiments described below, compared with the above-mentioned first embodiment, the description will focus on the characteristic components, and the description of the same or similar components as the first embodiment will be omitted as much as possible.

Hereinafter, the conductive contact pin (100) according to the preferred fourth embodiment of the present invention will be described with reference to Fig. 27(a), Fig. 27(b) to Fig. 34(a), Fig. 34(b) . (a) of Fig. 27 is a front perspective view of a conductive contact pin (100) according to a preferred fourth embodiment of the present invention, and (b) of Fig. 27 is a conductive contact pin (100) according to a preferred fourth embodiment of the present invention ( 100) rear perspective view, Figure 28 (a) - Figure 28 (d) to Figure 33 (a) - Figure 33 (d) is a conductive contact pin according to a preferred fourth embodiment of the present invention (100) of the manufacturing method, Figure 34 (a) is a perspective view of the first end of the conductive contact pin (100) according to the preferred fourth embodiment of the present invention, and Figure 34 (b) is based on A perspective view of the second end of the conductive contact pin (100) of the preferred fourth embodiment of the present invention.

The conductive contact pin (100) according to the fourth embodiment comprises: a main body part (101) including a first build-up part (110) configured with a plurality of metal build-up layers; a first end part (102) including a plurality of metal build-up layers The second build-up part (120) is arranged, and at least one metal layer constituting the first build-up part (110) and at least one metal layer constituting the second build-up part (120) are not disposed on the same horizontal line.

In addition, the first laminated part (110) is formed by a metal layer with relatively high electrical conductivity and a metal laminate layer with relatively high wear resistance, and the thickness of the metal layer with high electrical conductivity is thicker than that of the metal layer with high wear resistance. , the second laminated part (120) has a configuration in which a metal layer with relatively high electrical conductivity and a metal layer with relatively high wear resistance are laminated, and the thickness of the metal layer with high wear resistance is thicker than the thickness of the metal layer with high electrical conductivity .

In addition, the first laminated part (110) is formed by a metal layer with relatively high electrical conductivity and a metal laminate layer with relatively high wear resistance, and the content of the metal layer with high electrical conductivity is greater than the content of the metal layer with high wear resistance. , the second laminated part (120) has a configuration in which a metal layer with relatively high electrical conductivity and a metal layer with relatively high wear resistance are laminated, and the content of the metal layer with high wear resistance is larger than the content of the metal layer with high electrical conductivity .

With such a configuration of the first layered part (110) and the second layered part (120), the physical properties or The electrical characteristics are different from each other. Thereby, the current carrying capacity (Current Carrying Capacity) of the main body part (101) can be improved, and the wear resistance of the first end part (102) can be improved.

The conductive contact pin ( 100 ) according to the fourth embodiment is manufactured by plating the first laminated part ( 110 ) and the second laminated part ( 120 ) respectively by using a mold. Hereinafter, referring to Fig. 28 (a) - Fig. 28 (d) to Fig. 33 (a) - Fig. 33 (d), the conductive contact pin (100) according to the preferred fourth embodiment of the present invention The manufacturing method will be described.

Referring to (a) of Figure 28-(d) of Figure 28, (a) of Figure 28 is a plan view of a mold (10) having a first internal space (11), and (b) of Figure 28 is (a) of Figure 28 ), (c) of Figure 28 is a BB' section view of Figure 28 (a), and Figure 28 (d) is a CC' section of Figure 28 (a) picture.

Referring to (a)-(d) of FIG. 28 , a first internal space ( 11 ) is formed in the mold ( 10 ), and a seed layer ( 20 ) is disposed in the lower part of the mold ( 10 ).

In the aspect that the conductive contact pin (100) according to the preferred embodiment of the present invention is manufactured by using the mold (10) made of anodized film material instead of the photoresist mold, it can realize the shape that was once limited when realized as a photoresist mold The precision and the effect of fine shape.

A seed crystal layer (20) is arranged on the lower surface of the mold (10). The seed crystal layer (20) can be arranged on the lower surface of the mold (10) before the mold (10) forms the first internal space (11). On the other hand, a support substrate (not shown) is formed at the lower portion of the mold (10) to improve the operability of the mold (10). In addition, in this case, the seed layer (20) may also be formed on the upper surface of the supporting substrate (not shown), and the mold (10) formed with the first internal space (11) is bonded to the supporting substrate (not shown). shown) to use. The seed layer ( 20 ) can be formed of copper (Cu) material, and can be formed by a deposition method. When the second build-up part (120) is formed by electroplating, the seed layer (20) is used to improve the plating quality of the second build-up part (120).

The first internal space (11) can be formed by wet etching the mold (10) made of anodized film. To this end, a photoresist can be arranged on the upper surface of the mold (10) and patterned, and then the anodic oxide film in the area where the opening is patterned reacts with the etching solution to form the first internal space (11). To illustrate specifically, the exposure process and the development process may be performed after disposing a photosensitive material on the upper surface of the mold (10) before forming the first internal space (11). The photosensitive material can form an opening area through an exposure process and a development process, and at least a part is patterned and removed. The mold (10) made of anodic oxide film performs an etching process by using a patterning process to remove the opening area of the photosensitive material, and uses an etching solution to remove the anodic oxide film at a position corresponding to the internal space (11), thereby forming a second an inner space (11).

Next, referring to Fig. 29(a) - Fig. 29(d), Fig. 29(a) is a plan view of the mold (10) forming the second laminated part (120) in the first internal space (11), Fig. 29 (b) is an AA' sectional view of (a) of FIG. 29 , FIG. 3c is a BB' sectional view of FIG. 3a , and FIG. 3d is a CC' sectional view of FIG. 3a .

A step of performing an electroplating process in the first internal space (11) of the mold (10) to form the second laminated part (120). Multiple electroplating processes are performed to stack multiple metal layers in the thickness direction of the conductive contact pin (100) to form the second stacked part (120). The second laminated part (120) is made of rhodium (rhodium, Rh), platinum (platinum, Pt), iridium (iridium, Ir), palladium (palladium) or alloys thereof, or palladium-cobalt (palladium-cobalt, PdCo) alloy, palladium-nickel (palladium-nickel, PdNi) alloy or nickel-phosphorus (nickel-phosphor, NiP) alloy, nickel-manganese (nickel-manganese, NiMn), nickel-cobalt (nickel-cobalt, NiCo) or nickel-tungsten (nickel-tungsten , NiW) alloy, copper (Cu), silver (Ag), gold (Au) at least two or more metal laminates to configure. For example, the first metal ( 210 ) made of palladium-cobalt (palladium-cobalt, PdCo) alloy and the second metal ( 230 ) made of copper (Cu) can be alternately laminated. Here, the first metal (210) can improve the wear resistance of the first end (102) of the conductive contact pin (100), and the second metal (230) can improve the wear resistance of the first end of the conductive contact pin (100). (102) conductivity.

The first laminated part (110) can be formed such that a metal layer with relatively high electrical conductivity and a metal layer with relatively high wear resistance are laminated, and the thickness of the metal layer with high electrical conductivity is greater than the thickness of the metal layer with high wear resistance. Alternatively, the first laminated part (110) is formed in such a way that a metal layer with relatively high electrical conductivity and a metal layer with relatively high wear resistance are laminated, and the content of the metal layer with high electrical conductivity is greater than the content of the metal layer with high wear resistance. .

Upon completion of the plating process, a planarization process may be performed. Metal protruding towards the upper surface of the mold (10) is removed and planarized by a chemical mechanical polishing (CMP) process.

Referring next to (a) of Figure 30-(d) of Figure 30, (a) of Figure 30 is a plan view of a mold (10) that removes a part of the mold (10) to form a second internal space (12), and of Figure 30 (b) is the AA' sectional view of (a) of FIG. 30 , (c) of FIG. 30 is the BB' sectional view of (a) of FIG. 30 , and (d) of FIG. 30 is the (a) C-C' section view.

A process of removing a portion of the mold (10) is performed. A portion of the mold (10) is removed to form a second interior space (12) in the mold (10). To illustrate specifically, an exposure process and a development process may be performed after the photosensitive material is disposed on the upper surface of the mold (10). The photosensitive material can form an opening area through an exposure process and a development process, and at least a part is patterned and removed. An etching process is performed by removing the opening area of the photosensitive material through a patterning process, and a part of the mold (10) is removed using an etching solution, thereby forming a second internal space (12).

The mold (10) is exposed on three sides of the second internal space (12), and the second buildup part (120) is exposed on one side.

Referring next to Figure 31 (a)-Figure 31 (d), Figure 31 (a) is a plan view of the mold (10) that forms the first laminated part (110) in the second internal space (12), and Figure 31 (b) is the AA' sectional view of (a) of FIG. 31 , (c) of FIG. 31 is the BB' sectional view of (a) of FIG. 31 , and (d) of FIG. 31 is the (a) C-C' section view.

A step of forming a first buildup part (110) is performed. The first build-up part (110) is formed in the second internal space (12) formed in the previous step by using an electroplating process.

The first build-up part (110) is integrated with the second build-up part (120) produced in the previous step. As explained above, the second build-up part (120) is exposed on one side of the second internal space (12), and the first build-up part (110) and the second build-up part (120) are integrated on the side.

The first laminated part (110) is made of rhodium (rhodium, Rh), platinum (platinum, Pt), iridium (iridium, Ir), palladium (palladium) or alloys thereof, or palladium-cobalt (palladium-cobalt, PdCo) alloy, palladium-nickel (palladium-nickel, PdNi) alloy or nickel-phosphorus (nickel-phosphor, NiP) alloy, nickel-manganese (nickel-manganese, NiMn), nickel-cobalt (nickel-cobalt, NiCo) or nickel-tungsten (nickel-tungsten , NiW) alloy, copper (Cu), silver (Ag), gold (Au) at least two or more metal laminates to configure. For example, the first metal ( 210 ) made of palladium-cobalt (palladium-cobalt, PdCo) alloy and the second metal ( 230 ) made of copper (Cu) can be alternately laminated. Here, the first metal (210) can improve the elastic deformation of the main body (101) of the conductive contact pin (100), and the second metal (230) can improve the conduction of the main body (101) of the conductive contact pin (100). sex.

The second laminated part (120) is formed by laminating a metal layer with relatively high electrical conductivity and a metal layer with relatively high wear resistance, and the thickness of the metal layer with high wear resistance is larger than the thickness of the metal layer with high electrical conductivity, Alternatively, the second laminated part (120) is formed by laminating a metal layer with relatively high electrical conductivity and a metal layer with relatively high wear resistance, and the content of the metal layer with high wear resistance is greater than the content of the metal layer with high electrical conductivity. .

FIG. 32 is an enlarged view of a dotted line portion (Z) in FIG. 31( a ) to FIG. 31( d ). FIG. 32 is a view more specifically showing a formation structure of a metal layer according to the plating process of FIGS. 31( a ) to 31 ( d ). For convenience of description, the "└" forming structure of the metal layer shown in FIG. 32 , (a) of FIG. 34 , and (b) of FIG. 34 is omitted in other figures of the fourth embodiment.

Since the first build-up part (110) is formed after the second build-up part (120) is arranged, when the first build-up part (110) is formed by plating, the lower seed layer (20) and the second build-up part (120) The inner side wall (122) is the seed crystal functional layer grown by plating. Therefore, the first end side vertical part (111a) is formed in the lowest layer (111) of the first buildup part (110), and the first end side vertical part (111a) is also continuously formed in the second buildup part The inner side wall (122) of (120) is arranged to extend in the vertical direction along the inner side wall (122) of the second buildup part (120). The lowermost layer ( 111 ) of the first laminated part ( 110 ) and the lowermost layer ( 121 ) of the second laminated part ( 120 ) are not formed to have the same thickness as each other, but the lowermost layer ( 111 ) of the first laminated part ( 110 ) and The lowermost layer (121) of the second laminated part (120) is formed of the same material as each other.

After forming the lowermost layer (111) of the first build-up part (110) including the first end-side vertical portion (111a), if the subsequent plating process is performed, the first end-side vertical portion (111a) includes The lowest layer (111) of the first build-up part (110) is a seed crystal functional layer grown by plating, which is arranged on the lowermost layer (111) of the first build-up part (110) including the vertical part (111a) on the first end side The metal layer on the upper surface of the first end part (102) has a "└" character side profile. If the subsequent plating process is performed, a plurality of metal layers having a side surface of the word "└" are formed on the first end (102) side of the first build-up part (110) to constitute the first build-up part (110).

The lowermost layer (121) of the second laminated part (120) is formed of the same metal material as the lowermost layer (111) of the first laminated part (110), and the lowermost layer (111) of the first laminated part (110) is also continuously It is formed on the inner side wall (122) of the second build-up part (120). In the case where the first metal (210) and the second metal (230) are alternately laminated to form a conductive contact pin, the second metal (230) of the first layered part (110) and the second layer of the second layered part (120) The first metal (210) constituting the lowermost layer (111) of the conductive contact pin (100) is disposed between the metals (230). The first metal (210) is configured to extend in a vertical direction from the lower surface to the upper surface of the conductive contact pin (100).

Since the lowest layer (111) of the first laminated part (110), the lowest layer (121) of the second laminated part (120), the uppermost layer (123) of the second laminated part (120), the second laminated part (120) The middle layer (125) and the vertical part (111a) on the first end side are formed of the first metal (210) of the same material, so that the second laminated part (120) can be prevented from being peeled off from the first laminated part (110) damage.

In addition, by forming a plurality of metal layers with the side profile of the word "└" on the first end (102) side of the first build-up part (110), it is possible to prevent damage to the first end (102) side. Shear failure is damaged.

On the other hand, the first build-up part (110) may also be arranged first, and then the second build-up part (120) may be formed. In this case, the inner sidewall of the first build-up part (110) becomes a seed crystal functional layer for plating growth when the second build-up part (120) is formed.

Next, referring to (a) of 33-(d) of FIG. 33, (a) of FIG. 33 is a plan view of the conductive contact pin (100), and (b) of FIG. 33 is an AA' section of (a) of FIG. 33 (c) of FIG. 33 is a BB' sectional view of (a) of FIG. 33 , and (d) of FIG. 33 is a CC' sectional view of (a) of FIG. 33 .

A process of removing the mold (10) and the seed layer (20) is performed after the previous steps. In the case that the mold ( 10 ) is made of anodized film material, the mold ( 10 ) is removed by using a solution that selectively reacts with the material of the anodized film. In addition, when the seed crystal layer ( 20 ) is made of copper (Cu), the seed crystal layer ( 20 ) is removed using a solution that selectively reacts with copper (Cu).

(a) of Fig. 34 is a perspective view of the front side of the conductive contact pin (100), that is, the first end (102) according to a preferred fourth embodiment of the present invention, and (b) of Fig. 34 is a comparative A perspective view of the back side of the conductive contact pin (100), that is, the second end portion (103) of the preferred fourth embodiment.

There is a difference in the following aspects: the metal layer of the second end part (103) is a configuration that is continuously arranged on the same horizontal line as the metal layer of the first layered part (110) constituting the main body part (101), and vice versa. The second build-up part (120) at the one end part (102) has a structure not arranged on the same horizontal line as the metal layer constituting the first build-up part (110).

Referring to Fig. 34 (a) and Fig. 34 (b), in the following aspects, the number of metal layers of the first build-up part (110) and the second build-up part (120) are the same: the second build-up part (120) is By stacking five metal layers sequentially from the lower surface to the upper surface according to the first metal (210), the second metal (230), the first metal (210), the second metal (230) and the first metal (210) The structure formed, the first layered part (110) is also from the lower surface to the upper surface direction according to the first metal (210), the second metal (230), the first metal (210), the second metal (230) and the first Metal (210) is a structure formed by sequentially laminating five metal layers. However, the thickness of the metal layer with high electrical conductivity in the first buildup part (110) is thicker than the thickness of the metal layer with high wear resistance, and the thickness of the metal layer with high wear resistance in the second buildup part (120) is thicker than that of the metal layer with high conductivity. The configuration that the thickness of the high metal layer is thick. Thereby, the content of the metal with high wear resistance at the first end portion (102) can be made higher than that at the main body portion (101), and the content of the metal with high electrical conductivity in the main body portion (101) can be made higher than at the second end portion (101). One end (102). Therefore, it is possible to provide a conductive contact pin (100) that further increases the allowable current capacity and improves wear resistance.

On the other hand, as a modified example of the fourth embodiment, the configuration of the third buildup part ( 130 ) of the second end part ( 103 ) may be configured differently from the configuration of the first buildup part ( 110 ). For example, in order to prevent arcing, the third laminated part (130) of the second end part (103) may be formed such that the thickness of the metal layer with high electrical conductivity is thicker than the thickness of the metal layer with high wear resistance.

In order to further improve the current carrying capacity (Current Carrying Capacity) on the surface of the conductive contact pin ( 100 ) according to various embodiments described above, a gold (Au) plating film may be additionally formed. In this case, no gold (Au) plating film may be formed at the first end portion ( 102 ).

As mentioned above, although the description is made with reference to the preferred embodiments of the present invention, those of ordinary skill in the corresponding technical field can implement various modifications to the present invention within the scope of the ideas and fields of the present invention described in the scope of the following claims or out of shape.

10: Mold 11: The first interior space 12: Second inner space 13: The third inner space 20: Seed layer 100: Conductive contact pin 101: Main body 102: first end 103: second end 110: The first lamination department 111, 121, 131: the lowest layer 111a: first end side vertical portion 111b: second end side vertical portion 120:Second lamination department 122, 132: inner side wall 123, 133: the top floor 125: middle layer 130: The third laminated part 210: First Metal 230:Second metal Z, Z1, Z2, Z3: dotted line part

FIG. 1A is a front perspective view of a conductive contact pin according to a preferred first embodiment of the present invention. FIG. 1B is a rear perspective view of a conductive contact pin according to a preferred first embodiment of the present invention. 2(a)-2(d) to 7(a)-7(d) are diagrams illustrating a method of manufacturing a conductive contact pin according to a preferred first embodiment of the present invention. (a) of FIG. 8 is a perspective view of the first end of the conductive contact pin according to the preferred first embodiment of the present invention. (a) of FIG. 8 is a perspective view of the second end portion of the conductive contact pin according to the preferred first embodiment of the present invention. (a) of FIG. 9 is a front perspective view of a conductive contact pin according to a preferred second embodiment of the present invention. (b) of FIG. 9 is a rear perspective view of a conductive contact pin according to a preferred second embodiment of the present invention. 10( a )- FIG. 10( e ) to FIG. 16( a )- FIG. 16( e ) are diagrams illustrating a method of manufacturing a conductive contact pin according to a preferred second embodiment of the present invention. (a) of FIG. 17 is a perspective view of the first end of the conductive contact pin according to the preferred second embodiment of the present invention. (b) of FIG. 17 is a perspective view of the second end portion of the conductive contact pin according to the preferred second embodiment of the present invention. (a) of FIG. 18 is a front perspective view of a conductive contact pin according to a preferred third embodiment of the present invention. (b) of FIG. 18 is a rear perspective view of a conductive contact pin according to a preferred third embodiment of the present invention. 19( a )- FIG. 19( e ) to FIG. 25( a )- FIG. 25( e ) are diagrams illustrating a method of manufacturing a conductive contact pin according to a preferred third embodiment of the present invention. (a) of FIG. 26 is a perspective view of the first end of the conductive contact pin according to the preferred third embodiment of the present invention. (b) of FIG. 26 is a perspective view of the second end of the conductive contact pin according to the preferred third embodiment of the present invention. (a) of FIG. 27 is a front perspective view of a conductive contact pin according to a preferred fourth embodiment of the present invention. (b) of FIG. 27 is a rear perspective view of a conductive contact pin according to a preferred fourth embodiment of the present invention. Fig. 28(a)-Fig. 28(d) to Fig. 33(a)-Fig. 33(d) show the manufacturing method of the conductive contact pin (100) according to the preferred fourth embodiment of the present invention diagram. (a) of FIG. 34 is a perspective view of a first end portion of a conductive contact pin according to a preferred fourth embodiment of the present invention. (b)- of FIG. 34 is a perspective view of the second end of the conductive contact pin according to the preferred fourth embodiment of the present invention.

100: Conductive contact pin

101: Main body

102: first end

103: second end

110: The first lamination department

120:Second lamination department

Claims (20)

A conductive contact pin comprising: a body portion including a first build-up portion of a plurality of metal build-up layer configurations; and a first end portion including a second buildup portion configured with a plurality of metal buildup layers, At least one metal layer constituting the first build-up part and at least one metal layer constituting the second build-up part are not arranged on the same horizontal line. The conductive contact pin as claimed in claim 1, wherein The number of laminated layers of the metal layers constituting the second laminated portion is different from the number of laminated layers of the metal layers constituting the first laminated portion. The conductive contact pin as claimed in claim 1, wherein The number of stacked metal layers constituting the second stacked portion is smaller than the number of stacked metal layers constituting the first stacked portion. The conductive contact pin as claimed in claim 1, wherein The first layered part and the second layered part are formed by alternately layering a first metal and a second metal, In the first layered part and the second layered part, the number of alternately laminated layers of the first metal and the second metal is different from each other. The conductive contact pin as claimed in item 4, wherein The first metal is formed of a metal selected from rhodium (Rhodium, Rh), platinum (Platinum, Pt), iridium (Iridium, Ir), palladium (Palladium) or alloys thereof, or palladium cobalt (Palladium -cobalt, PdCo) alloy, palladium-nickel (PdNi) alloy or nickel-phosphor (NiP) alloy, nickel-manganese (nickel-manganese, NiMn), nickel-cobalt (nickel-cobalt, NiCo) or nickel Tungsten (nickel-tungsten, NiW) alloy, The second metal is formed of a metal selected from an alloy of copper (Cu), silver (Ag), gold (Au), or the like. The conductive contact pin as claimed in claim 1, wherein The lowermost layer of the first build-up part includes a first end-side vertical part, and the first end-side vertical part is also continuously formed on the inner side wall of the second build-up part and along the second build-up part. The internal side walls of the configuration are extended in the vertical direction. The conductive contact pin as claimed in claim 1, wherein The lowermost layer of the second build-up part is formed of the same metal material as the lowermost layer of the first build-up part, The lowermost layer of the first build-up part is also continuously formed on the inner sidewall of the second build-up part. The conductive contact pin as claimed in claim 1, wherein Between the second metal of the first build-up part and the second metal of the second build-up part, the first metal constituting the lowermost layer of the conductive contact pin is arranged, and the first metal is separated from the conductive contact pin. The contact pins are arranged to extend vertically from the lower surface to the upper surface. The conductive contact pin as described in claim 1, comprising: The third layered part is arranged at the second end part of the conductive contact pin. The conductive contact pin as claimed in claim 9, wherein At least one metal layer constituting the first build-up part and at least one metal layer constituting the third build-up part are not arranged on the same horizontal line. The conductive contact pin as claimed in claim 9, wherein The number of laminated layers of the third laminated part is different from at least one of the number of laminated layers of the first laminated part and the number of laminated layers of the second laminated part. The conductive contact pin as claimed in claim 9, wherein The number of laminated layers of the third laminated part is the same as the number of laminated layers of the second laminated part. The conductive contact pin as claimed in claim 9, wherein The lowermost layer of the first build-up part includes a second end-side vertical part, and the second end-side vertical part is also continuously formed on the inner side wall of the third build-up part and extends along the inner side wall. The conductive contact pin as claimed in claim 9, wherein The lowermost layer of the third build-up part is formed of the same metal material as the lowermost layer of the first build-up part, The lowermost layer of the first build-up part is also continuously formed on the inner sidewall of the third build-up part. The conductive contact pin as claimed in claim 9, wherein The metal layer constituting the first build-up part and the metal layer constituting the third build-up part are different from each other. The conductive contact pin as claimed in claim 1, wherein The first end further includes an outer extension. The conductive contact pin as claimed in claim 1, wherein The first layered part is formed by a metal layer with relatively high electrical conductivity and a metal layer with relatively high wear resistance, and the thickness of the metal layer with high electrical conductivity is thicker than that of the metal layer with high wear resistance, The second laminated portion is formed by a metal layer with relatively high electrical conductivity and a metal layer with relatively high wear resistance, and the metal layer with high wear resistance is thicker than the metal layer with higher electrical conductivity. The conductive contact pin as claimed in claim 1, wherein The first layered part is formed by a metal layer with relatively high electrical conductivity and a metal laminate layer with relatively high wear resistance, and the content of the metal layer with high electrical conductivity is larger than the content of the metal layer with high wear resistance, The second laminated portion is formed by a metal layer with relatively high electrical conductivity and a metal laminate layer with relatively high wear resistance, and the content of the metal layer with high wear resistance is greater than that of the metal layer with high electrical conductivity. A method of manufacturing a conductive contact pin. In the method of manufacturing a conductive contact pin, the conductive contact pin includes: a main body part including a first laminated part configured by a plurality of metal laminated layers; and a first end part including a plurality of metal laminated layers. a second buildup portion of the buildup configuration, wherein The first build-up part and the second build-up part are respectively plated and formed by using a mold. The method of manufacturing a conductive contact pin as claimed in claim 19, wherein The mold is formed of anodized film material.

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