TW202300226A - Substrate processing apparatus and substrate processing method - Google Patents

Substrate processing apparatus and substrate processing method Download PDF

Info

Publication number
TW202300226A
TW202300226A TW110143707A TW110143707A TW202300226A TW 202300226 A TW202300226 A TW 202300226A TW 110143707 A TW110143707 A TW 110143707A TW 110143707 A TW110143707 A TW 110143707A TW 202300226 A TW202300226 A TW 202300226A
Authority
TW
Taiwan
Prior art keywords
opening
supply pipe
substrate
aforementioned
flow rate
Prior art date
Application number
TW110143707A
Other languages
Chinese (zh)
Other versions
TWI807500B (en
Inventor
東克栄
田村零央
竹本憲司
長尾大樹
Original Assignee
日商斯庫林集團股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商斯庫林集團股份有限公司 filed Critical 日商斯庫林集團股份有限公司
Publication of TW202300226A publication Critical patent/TW202300226A/en
Application granted granted Critical
Publication of TWI807500B publication Critical patent/TWI807500B/en

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • H01L21/67075Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05BSPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B13/00Machines or plants for applying liquids or other fluent materials to surfaces of objects or other work by spraying, not covered by groups B05B1/00 - B05B11/00
    • B05B13/02Means for supporting work; Arrangement or mounting of spray heads; Adaptation or arrangement of means for feeding work
    • B05B13/04Means for supporting work; Arrangement or mounting of spray heads; Adaptation or arrangement of means for feeding work the spray heads being moved during spraying operation
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05CAPPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C11/00Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
    • B05C11/10Storage, supply or control of liquid or other fluent material; Recovery of excess liquid or other fluent material
    • B05C11/1002Means for controlling supply, i.e. flow or pressure, of liquid or other fluent material to the applying apparatus, e.g. valves
    • B05C11/1007Means for controlling supply, i.e. flow or pressure, of liquid or other fluent material to the applying apparatus, e.g. valves responsive to condition of liquid or other fluent material
    • B05C11/1013Means for controlling supply, i.e. flow or pressure, of liquid or other fluent material to the applying apparatus, e.g. valves responsive to condition of liquid or other fluent material responsive to flow or pressure of liquid or other fluent material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02057Cleaning during device manufacture
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67253Process monitoring, e.g. flow or thickness monitoring
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Fluid Mechanics (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Weting (AREA)

Abstract

The present invention relates to a substrate processing apparatus and a substrate processing method. A substrate processing apparatus includes a substrate holder, a nozzle 8, a first supply pipe 114, a first opening and closing section 111, a first flow rate adjusting section 112, a second supply pipe 124, and a flow rate controller 200. The second supply pipe 124 supplies a processing liquid to the nozzle 8. The flow rate controller 200 controls the first opening and closing section 111 and the first flow rate adjusting section 112. The flow rate controller 200 determines an opening of the first flow rate adjusting section 112 to be a first opening under feedback control of the opening of the first flow rate adjusting section 112 with the first supply pipe 114 opened in a first period. The flow rate controller 200 opens and closes the first supply pipe 114 not under feedback control of the opening of the first flow adjusting section 112 with the first flow rate adjusting section 112 opened at the first opening during a second period. The first period is before the second period.

Description

基板處理裝置及基板處理方法Substrate processing apparatus and substrate processing method

本發明係關於一種基板處理裝置及基板處理方法。The invention relates to a substrate processing device and a substrate processing method.

於半導體器件之製造過程中,利用基板處理裝置對半導體晶圓進行各種處理。例如,作為基板處理裝置,業已知悉將半導體晶圓中所含之處理對象膜之膜厚設為目標膜厚之蝕刻裝置(例如,參照專利文獻1)。例如,蝕刻裝置朝向半導體晶圓自供給管供給蝕刻液,而對半導體晶圓進行蝕刻。In the manufacturing process of semiconductor devices, semiconductor wafers are processed by substrate processing equipment. For example, as a substrate processing apparatus, an etching apparatus that sets the film thickness of a film to be processed included in a semiconductor wafer to a target film thickness is known (for example, refer to Patent Document 1). For example, an etching apparatus supplies an etchant from a supply pipe toward a semiconductor wafer to etch the semiconductor wafer.

又,必須相應於各種處理,變更如蝕刻液之處理液之噴出量。因此,於供給管設置有調整處理液之流量之調整閥。  [先前技術文獻]  [專利文獻]Also, it is necessary to change the discharge amount of processing liquid such as etching liquid according to various processing. Therefore, an adjustment valve for adjusting the flow rate of the treatment liquid is provided in the supply pipe. [Prior technical literature] [Patent literature]

[專利文獻1]日本特開2017-85174號公報[Patent Document 1] Japanese Patent Laid-Open No. 2017-85174

[發明所欲解決之問題][Problem to be solved by the invention]

一般而言,為了朝基板高精度地噴出特定噴出量之處理液,而對調整閥之開度進行PID控制(回饋控制)。又,亦必須相應於半導體晶圓中之位置,變更處理液之噴出量。然而,為了對調整閥之開度進行PID控制,而產生用於將處理液之噴出量調整為特定噴出量之時間或波動,無法朝向半導體晶圓快速地噴出特定噴出量之處理液。In general, in order to accurately discharge a specific discharge amount of processing liquid onto a substrate, PID control (feedback control) is performed on the opening of the regulating valve. Also, it is necessary to change the discharge amount of the processing liquid according to the position in the semiconductor wafer. However, in order to perform PID control of the opening of the adjustment valve, time or fluctuations are generated for adjusting the discharge amount of the processing liquid to a specific discharge amount, and the specific discharge amount of the processing liquid cannot be quickly discharged toward the semiconductor wafer.

本發明係鑒於上述問題而完成者,其目的在於提供一種可朝噴嘴更快速地噴出特定噴出量之處理液之基板處理裝置及基板處理方法。  [解決問題之技術手段]The present invention was made in view of the above problems, and an object of the present invention is to provide a substrate processing apparatus and a substrate processing method that can more quickly discharge a specific discharge amount of processing liquid toward a nozzle. [Technical means to solve problems]

本發明之基板處理裝置具備:基板保持部、噴嘴、第1供給管、第1開閉部、第1流量調整部、第2供給管、及流量控制部。前述基板保持部保持基板。前述噴嘴向前述基板供給處理液。前述第1供給管將前述處理液供給至前述噴嘴。前述第1開閉部將前述第1供給管開閉。前述第1流量調整部調整前述第1供給管中流通之前述處理液之流量。前述第2供給管將前述處理液供給至前述噴嘴。前述流量控制部控制前述第1開閉部及前述第1流量調整部。前述流量控制部於第1期間內,在將前述第1供給管打開之狀態下,對前述第1流量調整部之開度進行回饋控制,將前述第1流量調整部之開度決定為第1開度。前述流量控制部於第2期間內,在將前述第1流量調整部之開度設為前述第1開度之狀態下,不對前述第1流量調整部之開度進行回饋控制,將前述第1供給管開閉。前述第1期間係較前述第2期間前面之期間。The substrate processing apparatus of the present invention includes a substrate holding unit, a nozzle, a first supply pipe, a first opening and closing unit, a first flow rate adjustment unit, a second supply pipe, and a flow control unit. The aforementioned substrate holding portion holds a substrate. The nozzle supplies the processing liquid to the substrate. The first supply pipe supplies the treatment liquid to the nozzle. The first opening and closing unit opens and closes the first supply pipe. The first flow rate regulator adjusts the flow rate of the treatment liquid flowing through the first supply pipe. The second supply pipe supplies the treatment liquid to the nozzle. The flow control unit controls the first opening and closing unit and the first flow adjustment unit. During the first period, the flow rate control unit performs feedback control on the opening degree of the first flow rate adjustment unit in the state of opening the first supply pipe, and determines the opening degree of the first flow rate adjustment unit as the first opening. During the second period, the flow rate control unit does not perform feedback control on the opening degree of the first flow rate adjustment unit while setting the opening degree of the first flow rate control unit to the first opening degree, and turns the first flow rate control unit to the first opening degree. The supply pipe opens and closes. The first period mentioned above is the period before the second period mentioned above.

於某一實施形態中,進一步具備流量計,前述流量計計測前述第1供給管中流通之前述處理液之流量。前述流量控制部朝前述第1開閉部輸出開閉信號,且朝前述第1流量調整部輸出開度信號。前述開閉信號表示前述第1供給管之打開狀態及關閉狀態內之任一狀態。前述開度信號表示前述第1流量調整部之開度。前述回饋控制包含基於前述流量計之檢測結果之比例控制、積分控制、及微分控制。In one embodiment, a flow meter is further provided, and the flow meter measures the flow rate of the treatment liquid flowing through the first supply pipe. The flow control unit outputs an opening and closing signal to the first opening and closing unit, and outputs an opening signal to the first flow adjustment unit. The opening/closing signal indicates either the open state or the closed state of the first supply pipe. The opening degree signal indicates the opening degree of the first flow rate regulator. The aforementioned feedback control includes proportional control, integral control, and differential control based on the detection results of the aforementioned flowmeter.

於某一實施形態中,於前述第2期間內,前述噴嘴向前述基板之周緣部噴出第1噴出量之前述處理液,向前述基板之中央部噴出較前述第1噴出量為多之第2噴出量之前述處理液。前述第1噴出量之前述處理液係自前述第2供給管供給之前述處理液。前述第2噴出量之前述處理液係自前述第1供給管供給之前述處理液、及自前述第2供給管供給之前述處理液。In a certain embodiment, during the second period, the nozzle sprays a first discharge amount of the treatment liquid to the peripheral portion of the substrate, and discharges a second discharge amount that is larger than the first discharge amount to the center portion of the substrate. Discharge amount of the aforementioned treatment liquid. The treatment liquid of the first discharge amount is the treatment liquid supplied from the second supply pipe. The treatment liquid of the second discharge amount is the treatment liquid supplied from the first supply pipe and the treatment liquid supplied from the second supply pipe.

於某一實施形態中,進一步具備基板旋轉部,前述基板旋轉部以沿鉛直方向延伸之旋轉軸線為中心而使前述基板旋轉。於前述第2期間內,使前述基板相對於前述噴嘴旋轉。In one embodiment, it further includes a substrate rotating unit that rotates the substrate around a rotation axis extending in the vertical direction. During the second period, the substrate is rotated relative to the nozzle.

於某一實施形態中,進一步具備驅動部,前述驅動部於前述第2期間內,使前述噴嘴相對於前述基板移動。In one embodiment, a driving unit is further provided, and the driving unit moves the nozzle with respect to the substrate during the second period.

於某一實施形態中,進一步具備檢測前述驅動部之驅動狀態之檢測部。於前述第2期間內,前述流量控制部基於前述檢測部之檢測結果,將前述第1供給管開閉。In a certain embodiment, the detection part which detects the drive state of the said drive part is further provided. During the second period, the flow control unit opens and closes the first supply pipe based on the detection result of the detection unit.

於某一實施形態中,前述驅動部可變更前述噴嘴之移動速度。前述流量控制部將前述第1供給管開閉時,減慢前述噴嘴之移動速度。In one embodiment, the driving unit can change the moving speed of the nozzle. When the flow control unit opens and closes the first supply pipe, the moving speed of the nozzle is slowed down.

於某一實施形態中,進一步具備:第2開閉部,其將前述第2供給管開閉;及第2流量調整部,其調整前述第2供給管中流通之前述處理液之流量。前述流量控制部於第3期間內,在將前述第2供給管打開之狀態下,對前述第2流量調整部之開度進行回饋控制,將前述第2流量調整部之開度決定為第2開度。於前述第2期間內,於將前述第2流量調整部之開度設為前述第2開度之狀態下,不對前述第2流量調整部之開度進行回饋控制,將前述第2供給管開閉。前述第3期間係較前述第2期間前面之期間。In one embodiment, it further includes: a second opening and closing unit that opens and closes the second supply pipe; and a second flow rate adjustment unit that adjusts the flow rate of the treatment liquid flowing through the second supply pipe. During the third period, the flow control unit performs feedback control on the opening degree of the second flow adjustment unit in the state of opening the second supply pipe, and determines the opening degree of the second flow adjustment unit to be the second opening. During the second period, in the state where the opening degree of the second flow rate adjustment part is set to the second opening degree, feedback control is not performed on the opening degree of the second flow rate adjustment part, and the second supply pipe is opened and closed. . The aforementioned third period is the period preceding the aforementioned second period.

本發明之基板處理方法包含下述步序:保持基板;自噴嘴向前述基板噴出處理液;自第1供給管將前述處理液供給至前述噴嘴;利用第1流量調整部調整前述第1供給管中流通之前述處理液之流量;自第2供給管將前述處理液供給至前述噴嘴;於將前述第1供給管打開之狀態下,對前述第1流量調整部之開度進行回饋控制,將前述第1流量調整部之開度決定為第1開度;及於將前述第1流量調整部之開度設為前述第1開度之狀態下,不對前述第1流量調整部之開度進行回饋控制,將前述第1供給管開閉。The substrate processing method of the present invention includes the following steps: holding the substrate; spraying the processing liquid from the nozzle to the substrate; supplying the processing liquid to the nozzle from the first supply pipe; adjusting the first supply pipe by the first flow rate adjustment unit The flow rate of the above-mentioned processing liquid circulating in the center; the above-mentioned processing liquid is supplied to the above-mentioned nozzle from the second supply pipe; in the state of opening the above-mentioned first supply pipe, the opening degree of the above-mentioned first flow adjustment part is feedback controlled, and the The opening degree of the first flow rate adjustment part is determined as the first opening degree; and in the state where the opening degree of the first flow rate adjustment part is set to the first opening degree, the opening degree of the first flow rate adjustment part is not adjusted. Feedback control is to open and close the aforementioned first supply pipe.

於某一實施形態中,進一步包含以沿鉛直方向延伸之旋轉軸線為中心而使前述基板旋轉之步序。In one embodiment, it further includes the step of rotating the substrate about a rotation axis extending in the vertical direction.

於某一實施形態中,進一步包含使前述噴嘴相對於前述基板移動之步序。  [發明之效果]In one embodiment, it further includes the step of moving the nozzle relative to the substrate. [Effect of Invention]

根據本發明之基板處理裝置及基板處理方法,可朝基板更快速地噴出特定噴出量之處理液。According to the substrate processing apparatus and the substrate processing method of the present invention, it is possible to more quickly discharge a specific discharge amount of processing liquid toward the substrate.

以下,參照圖式(圖1~圖11),說明本發明之實施形態。惟,本發明不限定於以下之實施形態。此外,有針對說明重複之部分,適宜省略說明之情形。又,圖中針對同一或相當部分賦予同一參考符號,且不再重複說明。Hereinafter, embodiments of the present invention will be described with reference to the drawings (FIGS. 1 to 11). However, the present invention is not limited to the following embodiments. In addition, there are cases where it is appropriate to omit descriptions for parts that are repeated in descriptions. In addition, the same reference numerals are given to the same or corresponding parts in the drawings, and descriptions thereof will not be repeated.

本發明之基板處理裝置及基板處理方法視為處理之對象之「基板」可應用半導體晶圓、光罩用玻璃基板、液晶顯示用玻璃基板、電漿顯示用玻璃基板、FED(Field Emission Display,場發射顯示器)用基板、光碟用基板、磁碟用基板、及光磁碟用基板等各種基板。以下,主要以將圓板狀之半導體晶圓視為處理之對象之基板處理裝置及基板處理方法為例來說明本實施形態,但本發明之基板處理裝置及基板處理方法對於上述之半導體晶圓以外之各種基板亦可同樣地應用。又,針對基板之形狀,亦不限定於圓板狀,本發明之基板處理裝置及基板處理方法可對於各種形狀之基板應用。The substrate processing apparatus and substrate processing method of the present invention can be used as the "substrate" to be processed, such as semiconductor wafers, glass substrates for photomasks, glass substrates for liquid crystal displays, glass substrates for plasma displays, and FED (Field Emission Display, Various substrates such as substrates for field emission displays, substrates for optical disks, substrates for magnetic disks, and substrates for optical magnetic disks. Hereinafter, this embodiment will be described mainly by taking a substrate processing apparatus and a substrate processing method that regard a disc-shaped semiconductor wafer as an object of processing as an example. Various other substrates can also be applied in the same way. Also, the shape of the substrate is not limited to a disc shape, and the substrate processing apparatus and substrate processing method of the present invention can be applied to substrates of various shapes.

[實施形態1]  以下,參照圖1~圖10,說明本發明之實施形態1。首先,參照圖1,說明本實施形態之基板處理裝置100。圖1係本實施形態之基板處理裝置100之示意圖。詳細而言,圖1係基板處理裝置100之示意性俯視圖。基板處理裝置100對基板W進行處理。更具體而言,基板處理裝置100係將基板W一片接一片處理之單片式裝置。[Embodiment 1] Hereinafter, Embodiment 1 of the present invention will be described with reference to Fig. 1 to Fig. 10 . First, a substrate processing apparatus 100 according to this embodiment will be described with reference to FIG. 1 . FIG. 1 is a schematic diagram of a substrate processing apparatus 100 according to this embodiment. In detail, FIG. 1 is a schematic top view of a substrate processing apparatus 100 . The substrate processing apparatus 100 processes a substrate W. As shown in FIG. More specifically, the substrate processing apparatus 100 is a monolithic apparatus that processes substrates W one by one.

如圖1所示,基板處理裝置100具備:複數個處理單元1、流體殼體100A、複數個流體箱100B、複數個加載台LP、分度器機器人IR、中心機器人CR、及控制裝置101。As shown in FIG. 1 , the substrate processing apparatus 100 includes a plurality of processing units 1 , a fluid housing 100A, a plurality of fluid tanks 100B, a plurality of load tables LP, an indexer robot IR, a center robot CR, and a control device 101 .

加載台LP各者將複數片基板W積層並收容。分度器機器人IR於加載台LP與中心機器人CR之間搬送基板W。中心機器人CR於分度器機器人IR與處理單元1之間搬送基板W。此外,可採用下述裝置構成,即:於分度器機器人IR與中心機器人CR之間設置暫時載置基板W之載置台(路徑),於分度器機器人IR與中心機器人CR之間經由載置台間接交接基板W。Each of the loading tables LP stacks and accommodates a plurality of substrates W. The indexer robot IR transfers the substrate W between the load table LP and the center robot CR. The central robot CR conveys the substrate W between the indexer robot IR and the processing unit 1 . In addition, an apparatus configuration may be employed in which a stage (path) on which the substrate W is temporarily placed is provided between the indexer robot IR and the center robot CR, and the substrate is indirectly transferred between the indexer robot IR and the center robot CR via the stage. W.

複數個處理單元1形成有以於俯視下包圍中心機器人CR之方式配置之複數個塔TW(圖1中為4個塔TW)。各塔TW包含在上下積層之複數個處理單元1(圖1中為3個處理單元1)。處理單元1各者將處理液供給至基板W,而對基板W進行處理。A plurality of processing units 1 are formed with a plurality of towers TW (four towers TW in FIG. 1 ) arranged so as to surround the central robot CR in plan view. Each tower TW includes a plurality of processing units 1 stacked up and down (three processing units 1 in FIG. 1 ). Each of the processing units 1 supplies the processing liquid to the substrate W to process the substrate W.

流體殼體100A收容處理液。流體箱100B分別對應於複數個塔TW中之1個。流體殼體100A內之處理液經由任一流體箱100B朝與流體箱100B對應之塔TW中所含之所有處理單元1供給。The fluid case 100A accommodates processing liquid. The fluid tanks 100B each correspond to one of the plurality of columns TW. The processing liquid in the fluid housing 100A is supplied to all the processing units 1 included in the tower TW corresponding to the fluid tank 100B via any fluid tank 100B.

於本實施形態中,處理液包含蝕刻液、沖洗液、SC1、及SC2。蝕刻液對基板W進行蝕刻。蝕刻液例如為氟化硝酸(氟酸(HF)與硝酸(HNO 3)之混合液)、氟酸、緩衝的氫氟酸(BHF)、氟化銨、HFEG(氟酸與乙二醇之混合液)、或磷酸(H 3PO 4)。沖洗液對基板W進行沖洗。具體而言,沖洗液係為了沖洗殘存於基板W上之蝕刻液而使用。沖洗液例如為去離子水、碳酸水、電解離子水、氫水、臭氧水、或稀釋濃度(例如,10 ppm~100 ppm左右)之鹽酸水。SC1與SC2各者將基板W洗淨。SC1例如為包含NH 4OH與H 2O 2之混合液。處理液雖然無特別限定,但以下,於實施形態1中,針對處理液為沖洗液之情形進行說明。 In this embodiment, the processing liquid includes an etching liquid, a rinse liquid, SC1, and SC2. The etchant etches the substrate W. FIG. The etchant is, for example, fluorinated nitric acid (a mixture of hydrofluoric acid (HF) and nitric acid (HNO 3 ), hydrofluoric acid, buffered hydrofluoric acid (BHF), ammonium fluoride, HFEG (a mixture of hydrofluoric acid and ethylene glycol) liquid), or phosphoric acid (H 3 PO 4 ). The rinse liquid rinses the substrate W. Specifically, the rinse solution is used to rinse the etching solution remaining on the substrate W. As shown in FIG. The rinsing solution is, for example, deionized water, carbonated water, electrolyzed ionized water, hydrogen water, ozone water, or hydrochloric acid water at a diluted concentration (for example, about 10 ppm to 100 ppm). Each of SC1 and SC2 cleans the substrate W. SC1 is, for example, a mixed solution containing NH 4 OH and H 2 O 2 . Although the processing liquid is not particularly limited, in Embodiment 1, the case where the processing liquid is a rinse liquid will be described below.

繼而,針對控制裝置101進行說明。控制裝置101控制基板處理裝置100之各部之動作。例如,控制裝置101控制加載台LP、分度器機器人IR、及中心機器人CR。控制裝置101包含控制部102、及記憶部103。Next, the control device 101 will be described. The control device 101 controls the operation of each part of the substrate processing apparatus 100 . For example, the control device 101 controls the load table LP, the indexer robot IR, and the center robot CR. The control device 101 includes a control unit 102 and a memory unit 103 .

控制部102具有處理器。控制部102例如具有CPU(Central Processing Unit,中央處理單元)、或MPU(Micro Processing Unit,微處理單元)。或,控制部102可具有泛用運算機。The control unit 102 has a processor. The control unit 102 has, for example, a CPU (Central Processing Unit, central processing unit) or an MPU (Micro Processing Unit, micro processing unit). Alternatively, the control unit 102 may have a general-purpose computer.

記憶部103記憶資料及電腦程式。資料包含製程條件資料。製程條件資料包含表示複數個製程條件之資訊。複數個製程條件各者規定基板W之處理內容及處理步序。The memory unit 103 stores data and computer programs. The data includes process condition data. The process condition data includes information representing a plurality of process conditions. Each of the plurality of process conditions defines the processing content and processing steps of the substrate W.

記憶部103具有主記憶裝置。主記憶裝置例如為半導體記憶體。記憶部103可進一步具有輔助記憶裝置。輔助記憶裝置例如包含半導體記憶體及硬碟機之至少一者。記憶部103可包含可移媒體。控制部102基於記憶於記憶部103之電腦程式及資料,控制基板處理裝置100之各部之動作。The memory unit 103 has a main memory. The main memory device is, for example, a semiconductor memory. The memory unit 103 may further have an auxiliary memory device. The auxiliary memory device includes, for example, at least one of a semiconductor memory and a hard disk drive. The storage unit 103 may include removable media. The control unit 102 controls the operation of each unit of the substrate processing apparatus 100 based on the computer programs and data stored in the storage unit 103 .

繼而,參照圖1及圖2,針對本實施形態之基板處理裝置100進一步進行說明。圖2係本實施形態之基板處理裝置100具備之處理單元1之示意圖。詳細而言,圖2係處理單元1之示意性剖視圖。Next, the substrate processing apparatus 100 of this embodiment will be further described with reference to FIGS. 1 and 2 . FIG. 2 is a schematic diagram of the processing unit 1 included in the substrate processing apparatus 100 of the present embodiment. In detail, FIG. 2 is a schematic cross-sectional view of the processing unit 1 .

如圖2所示,處理單元1具備:腔室2、旋轉卡盤3、旋轉馬達部5、噴嘴8、噴嘴移動機構9、及導引件10。又,基板處理裝置100之流體箱100B具備沖洗液供給部4。控制裝置101(控制部102)控制旋轉卡盤3、旋轉馬達部5、及噴嘴移動機構9。As shown in FIG. 2 , the processing unit 1 includes a chamber 2 , a spin chuck 3 , a spin motor unit 5 , a nozzle 8 , a nozzle moving mechanism 9 , and a guide 10 . Furthermore, the fluid tank 100B of the substrate processing apparatus 100 includes a rinse liquid supply unit 4 . The control device 101 (control unit 102 ) controls the spin chuck 3 , the spin motor unit 5 , and the nozzle moving mechanism 9 .

腔室2具有大致箱形狀。腔室2收容基板W、旋轉卡盤3、旋轉馬達部5、導引件10、噴嘴8、噴嘴移動機構9、及沖洗液供給部4之一部分。The chamber 2 has a substantially box shape. The chamber 2 accommodates the substrate W, the spin chuck 3 , the spin motor unit 5 , the guide 10 , the nozzle 8 , the nozzle moving mechanism 9 , and part of the rinse liquid supply unit 4 .

旋轉卡盤3水平地保持基板W。旋轉卡盤3係「基板保持部」之一例。具體而言,旋轉卡盤3具有複數個卡盤構件32、及旋轉基座33。複數個卡盤構件32沿基板W之周緣設置於旋轉基座33。複數個卡盤構件32以水平之姿勢保持基板W。旋轉基座33為大致圓板狀,以水平之姿勢支持複數個卡盤構件32。The spin chuck 3 holds the substrate W horizontally. The spin chuck 3 is an example of the "substrate holding part". Specifically, the spin chuck 3 has a plurality of chuck members 32 and a spin base 33 . A plurality of chuck members 32 are disposed on the rotating base 33 along the periphery of the substrate W. As shown in FIG. The plurality of chuck members 32 hold the substrate W in a horizontal posture. The rotary base 33 is substantially disc-shaped, and supports the plurality of chuck members 32 in a horizontal posture.

旋轉馬達部5以第1旋轉軸線AX1為中心而使基板W與旋轉卡盤3一體地旋轉。第1旋轉軸線AX1朝上下方向延伸。於本實施形態中,第1旋轉軸線AX1朝大致鉛直方向延伸。第1旋轉軸線AX1係中心軸之一例,旋轉馬達部5係「基板旋轉部」之一例。詳細而言,旋轉馬達部5以第1旋轉軸線AX1為中心而使旋轉基座33旋轉。因此,旋轉基座33以第1旋轉軸線AX1為中心而旋轉。其結果,由旋轉卡盤3保持之基板W以第1旋轉軸線AX1為中心而旋轉。The rotation motor unit 5 rotates the substrate W integrally with the spin chuck 3 around the first rotation axis AX1 . The first rotation axis AX1 extends in the vertical direction. In the present embodiment, the first rotation axis AX1 extends in a substantially vertical direction. The first rotation axis AX1 is an example of the central axis, and the rotation motor unit 5 is an example of the “substrate rotation unit”. Specifically, the rotation motor unit 5 rotates the rotation base 33 around the first rotation axis AX1. Therefore, the rotation base 33 rotates around the first rotation axis AX1. As a result, the substrate W held by the spin chuck 3 rotates around the first rotation axis AX1.

具體而言,旋轉馬達部5具有馬達本體51、軸53、及編碼器55。軸53與旋轉基座33結合。馬達本體51使軸53旋轉。其結果,旋轉基座33旋轉。Specifically, the rotary motor unit 5 has a motor body 51 , a shaft 53 , and an encoder 55 . The shaft 53 is combined with the rotation base 33 . The motor body 51 rotates the shaft 53 . As a result, the spin base 33 rotates.

編碼器55檢測基板W之旋轉位置,將表示基板W之旋轉位置之信號輸出至控制裝置101(控制部102)。以下,將表示基板W之旋轉位置之信號記載為「旋轉位置信號」。控制部102基於旋轉位置信號,算出基板W之旋轉速度或基板W之轉速[rpm]。The encoder 55 detects the rotational position of the substrate W, and outputs a signal indicating the rotational position of the substrate W to the control device 101 (control unit 102 ). Hereinafter, the signal indicating the rotational position of the substrate W is described as a "rotational position signal". The control unit 102 calculates the rotational speed of the substrate W or the rotational speed [rpm] of the substrate W based on the rotational position signal.

噴嘴8自基板W之上方朝向基板W噴出沖洗液。詳細而言,噴嘴8朝向旋轉中之基板W噴出沖洗液。The nozzle 8 sprays the rinse liquid toward the substrate W from above the substrate W. As shown in FIG. Specifically, the nozzle 8 sprays the rinse liquid toward the rotating substrate W. As shown in FIG.

導引件10具有大致筒形狀。導引件10承接自基板W排出之沖洗液。The guide 10 has a substantially cylindrical shape. The guide 10 receives the rinse liquid discharged from the substrate W. As shown in FIG.

噴嘴移動機構9使噴嘴8朝大致水平方向移動。詳細而言,噴嘴移動機構9使噴嘴8沿以沿著大致鉛直方向之第2旋轉軸線AX2為中心之周向移動。The nozzle moving mechanism 9 moves the nozzle 8 substantially horizontally. Specifically, the nozzle moving mechanism 9 moves the nozzle 8 in the circumferential direction centering on the second rotation axis AX2 along the substantially vertical direction.

具體而言,噴嘴移動機構9具有:噴嘴臂91、第1旋轉軸93、驅動部95、及編碼器94。噴嘴臂91沿大致水平方向延伸。於噴嘴臂91之前端部配置噴嘴8。噴嘴臂91與第1旋轉軸93結合。第1旋轉軸93沿大致鉛直方向延伸。Specifically, the nozzle moving mechanism 9 includes a nozzle arm 91 , a first rotation shaft 93 , a drive unit 95 , and an encoder 94 . The nozzle arm 91 extends substantially horizontally. The nozzle 8 is arranged at the front end of the nozzle arm 91 . The nozzle arm 91 is coupled to the first rotation shaft 93 . The first rotation shaft 93 extends in a substantially vertical direction.

驅動部95以第2旋轉軸線AX2為中心而使第1旋轉軸93旋轉,且以第1旋轉軸93為中心而使噴嘴臂91沿大致水平面迴旋。其結果,噴嘴81沿大致水平面移動。詳細而言,噴嘴8沿以第2旋轉軸線AX2為中心之周向繞第1旋轉軸93移動。驅動部95例如包含步進馬達。或,驅動部95可包含馬達、及減速機。The drive unit 95 rotates the first rotation shaft 93 around the second rotation axis AX2, and turns the nozzle arm 91 along a substantially horizontal plane around the first rotation shaft 93. As a result, the nozzle 81 moves along a substantially horizontal plane. Specifically, the nozzle 8 moves around the first rotation shaft 93 in the circumferential direction around the second rotation axis AX2. The driving unit 95 includes, for example, a stepping motor. Alternatively, the driving unit 95 may include a motor and a speed reducer.

編碼器94檢測驅動部95之驅動狀態。編碼器94係「檢測部」之一例。具體而言,編碼器94檢測驅動部95之旋轉狀態,將表示驅動部95之旋轉量之信號輸出至控制裝置101(控制部102)。以下,將表示驅動部95之旋轉量之信號記載為「驅動部旋轉量信號」。驅動部旋轉量信號為例如脈衝信號。控制部102基於驅動部旋轉量信號,算出相對於基板W之噴嘴8之位置與噴嘴8之移動速度。The encoder 94 detects the driving state of the driving unit 95 . The encoder 94 is an example of the "detection unit". Specifically, the encoder 94 detects the rotational state of the drive unit 95, and outputs a signal indicating the amount of rotation of the drive unit 95 to the control device 101 (control unit 102). Hereinafter, the signal indicating the rotation amount of the drive unit 95 is described as a “drive unit rotation amount signal”. The drive unit rotation amount signal is, for example, a pulse signal. The control unit 102 calculates the position of the nozzle 8 relative to the substrate W and the moving speed of the nozzle 8 based on the driving unit rotation amount signal.

繼而,參照圖3(a)及圖3(b),說明噴嘴移動處理、及基板旋轉處理。圖3(a)係顯示噴嘴移動處理之俯視圖。圖3(b)係顯示基板旋轉處理之俯視圖。首先,參照圖3(a),說明噴嘴移動處理。噴嘴移動處理表示使噴嘴8移動之處理。參照圖1所說明之控制部102控制噴嘴移動機構9,使噴嘴8移動。Next, nozzle movement processing and substrate rotation processing will be described with reference to FIG. 3( a ) and FIG. 3( b ). Figure 3(a) is a top view showing the nozzle movement process. Fig. 3(b) is a top view showing substrate rotation processing. First, the nozzle movement process will be described with reference to FIG. 3( a ). The nozzle moving process indicates the process of moving the nozzle 8 . The control unit 102 described with reference to FIG. 1 controls the nozzle moving mechanism 9 to move the nozzle 8 .

如圖3(a)所示,噴嘴移動機構9可於俯視下沿圓弧狀之軌跡TJ1使噴嘴8移動。軌跡TJ1通過基板W之邊緣部EG、基板W之中心部CT、及基板W之外部PO。邊緣部EG表示基板W之周緣部。As shown in FIG. 3( a ), the nozzle moving mechanism 9 can move the nozzle 8 along the arc-shaped trajectory TJ1 in a plan view. The track TJ1 passes through the edge portion EG of the substrate W, the central portion CT of the substrate W, and the outer PO of the substrate W. The edge part EG represents the peripheral part of the board|substrate W. As shown in FIG.

進而,參照圖3(b),說明基板旋轉處理。基板旋轉處理表示將基板W旋轉之處理。如圖3(b)所示,噴嘴8於基板旋轉處理中配置於處理位置P。處理位置P表示處理基板W之位置。又,噴嘴8於基板旋轉處理中向處理位置P噴出沖洗液。因此,噴嘴8沿基板W之周向CD向處理位置P噴出沖洗液。Furthermore, referring to FIG. 3( b ), the substrate rotation process will be described. The substrate rotation process refers to a process of rotating the substrate W. As shown in FIG. 3( b ), the nozzle 8 is arranged at the processing position P during the substrate rotation processing. The processing position P represents the position where the substrate W is processed. In addition, the nozzle 8 discharges the rinse liquid to the processing position P during the substrate rotation processing. Therefore, the nozzle 8 discharges the rinse liquid toward the processing position P along the circumferential direction CD of the substrate W. As shown in FIG.

於實施形態1中,噴嘴移動機構9一面使噴嘴8沿軌跡TJ1於中心部CT與邊緣部EG之間移動,一面向旋轉中之基板W噴出沖洗液。In Embodiment 1, the nozzle moving mechanism 9 ejects the rinse liquid toward the rotating substrate W while moving the nozzle 8 along the trajectory TJ1 between the center portion CT and the edge portion EG.

繼而,參照圖4,說明沖洗液供給部4。圖4係顯示實施形態1之沖洗液供給部4之示意圖。如圖4所示,沖洗液供給部4具備第1供給部110、第2供給部120、及流量控制部200。Next, the rinse liquid supply unit 4 will be described with reference to FIG. 4 . Fig. 4 is a schematic diagram showing the rinse liquid supply unit 4 of the first embodiment. As shown in FIG. 4 , the rinse liquid supply unit 4 includes a first supply unit 110 , a second supply unit 120 , and a flow rate control unit 200 .

首先,針對第1供給部110進行說明。第1供給部110包含:第1供給管114、第1流量計113、第1調整閥112、及第1開閉閥111。第1流量計113、第1調整閥112、及第1開閉閥111係按照該順序自第1供給管114之下游朝向上游配置於第1供給管114。第1調整閥112係「第1流量調整部」之一例。第1開閉閥111係「第1開閉部」之一例。First, the first supply unit 110 will be described. The first supply unit 110 includes a first supply pipe 114 , a first flow meter 113 , a first adjustment valve 112 , and a first on-off valve 111 . The first flow meter 113 , the first regulating valve 112 , and the first on-off valve 111 are arranged in this order on the first supply pipe 114 from downstream to upstream of the first supply pipe 114 . The first adjustment valve 112 is an example of the "first flow rate adjustment unit". The first on-off valve 111 is an example of the "first on-off section".

第1供給管114向噴嘴8供給沖洗液。詳細而言,沖洗液經由第1供給管114自流體殼體100A之槽210供給至噴嘴8。第1供給管114係供沖洗液流通之管狀構件。The first supply pipe 114 supplies the rinse liquid to the nozzle 8 . Specifically, the rinse liquid is supplied to the nozzle 8 from the groove 210 of the fluid housing 100A through the first supply pipe 114 . The first supply pipe 114 is a tubular member through which the flushing fluid flows.

第1開閉閥111將第1供給管114開閉。即,第1開閉閥111切換來自第1供給管114之對噴嘴8之沖洗液之供給與供給停止。The first on-off valve 111 opens and closes the first supply pipe 114 . That is, the first on-off valve 111 switches between supply and stop of the rinse liquid from the first supply pipe 114 to the nozzle 8 .

第1調整閥112調整第1供給管114中流通之沖洗液之流量。「流量」例如表示每單位時間通過單位面積之沖洗液之流量。第1調整閥112調節開度,調整第1供給管114中流通之沖洗液之流量。第1調整閥112例如為馬達針閥。具體而言,第1調整閥112包含:於內部設置有閥座之閥體(未圖示)、將閥座開閉之閥體、及使閥體於打開位置與關閉位置之間移動之致動器(未圖示)。The first adjusting valve 112 adjusts the flow rate of the flushing liquid flowing through the first supply pipe 114 . "Flow rate" means, for example, the flow rate of flushing liquid passing through a unit area per unit time. The opening of the first regulating valve 112 is adjusted to adjust the flow rate of the flushing liquid flowing through the first supply pipe 114 . The first regulating valve 112 is, for example, a motor needle valve. Specifically, the first regulating valve 112 includes: a valve body (not shown) with a valve seat inside, a valve body that opens and closes the valve seat, and an actuator that moves the valve body between an open position and a closed position. device (not shown).

第1流量計113計測第1供給管114中流通之沖洗液之流量。第1流量計113將表示流量之信號輸出至流量控制部200。表示流量之信號係「檢測結果」之一例,表示第1供給管114中流通之沖洗液之流量。以下,將表示流量之信號記載為「第1流量信號FA」。The first flow meter 113 measures the flow rate of the flushing liquid flowing through the first supply pipe 114 . The first flowmeter 113 outputs a signal indicating the flow rate to the flow control unit 200 . The signal indicating the flow rate is an example of the "detection result", and indicates the flow rate of the flushing liquid flowing through the first supply pipe 114 . Hereinafter, the signal indicating the flow rate will be described as "the first flow rate signal FA".

繼而,針對第2供給部120進行說明。包含第2供給管124、第2流量計123、第2調整閥122、及第2開閉閥121。第2流量計123、第2調整閥122、及第2開閉閥121按照該順序自第2供給管124之下游朝向上游配置於第2供給管124。第2調整閥122係「第2流量調整部」之一例。第2開閉閥121係「第2開閉部」之一例。Next, the second supply unit 120 will be described. A second supply pipe 124 , a second flowmeter 123 , a second adjustment valve 122 , and a second on-off valve 121 are included. The second flow meter 123 , the second regulating valve 122 , and the second on-off valve 121 are arranged in this order on the second supply pipe 124 from downstream to upstream of the second supply pipe 124 . The second adjustment valve 122 is an example of the "second flow rate adjustment unit". The second on-off valve 121 is an example of the "second on-off section".

第2供給管124朝噴嘴8供給沖洗液。詳細而言,沖洗液經由第2供給管124自槽210供給至噴嘴8。第2供給管124係供沖洗液流通之管狀構件。The second supply pipe 124 supplies the rinse liquid to the nozzle 8 . Specifically, the rinse liquid is supplied from the tank 210 to the nozzle 8 through the second supply pipe 124 . The second supply pipe 124 is a tubular member through which the flushing fluid flows.

第2開閉閥121將第2供給管124開閉。即,第2開閉閥121切換來自第2供給管124之對噴嘴8之沖洗液之供給與供給停止。The second on-off valve 121 opens and closes the second supply pipe 124 . That is, the second on-off valve 121 switches between supply and stop of the rinse liquid from the second supply pipe 124 to the nozzle 8 .

第2調整閥122調整第2供給管124中流通之沖洗液之流量。第2調整閥122調節開度,調整第2供給管124中流通之沖洗液之流量。第2調整閥122例如為馬達針閥。具體而言,第2調整閥122包含:於內部設置有閥座之閥體(未圖示)、將閥座開閉之閥體、及使閥體於打開位置與關閉位置之間移動之致動器(未圖示)。The second adjusting valve 122 adjusts the flow rate of the flushing liquid flowing through the second supply pipe 124 . The opening of the second regulating valve 122 is adjusted to adjust the flow rate of the flushing liquid flowing through the second supply pipe 124 . The second regulating valve 122 is, for example, a motor needle valve. Specifically, the second regulating valve 122 includes: a valve body (not shown) with a valve seat inside, a valve body that opens and closes the valve seat, and an actuator that moves the valve body between an open position and a closed position. device (not shown).

第2流量計123計測第2供給管124中流通之沖洗液之流量。第2流量計123將表示流量之信號輸出至流量控制部200。表示流量之信號表示第2供給管124中流通之沖洗液之流量。以下,將表示流量之信號記載為「第2流量信號FB」。The second flow meter 123 measures the flow rate of the flushing liquid flowing through the second supply pipe 124 . The second flowmeter 123 outputs a signal indicating the flow rate to the flow control unit 200 . The signal indicating the flow rate indicates the flow rate of the flushing liquid flowing through the second supply pipe 124 . Hereinafter, the signal indicating the flow rate will be described as "second flow rate signal FB".

繼而,針對流量控制部200進行說明。流量控制部200控制沖洗液供給部4之各構成。流量控制部200具有處理器。流量控制部200例如具有CPU(Central Processing Unit,中央處理單元)、或MPU(Micro Processing Unit,微處理單元)。例如,流量控制部200控制第1開閉閥111、第1調整閥112、第2開閉閥121、及第2調整閥122。Next, the flow rate control unit 200 will be described. The flow control unit 200 controls each configuration of the rinse liquid supply unit 4 . The flow control unit 200 has a processor. The flow control unit 200 includes, for example, a CPU (Central Processing Unit, central processing unit) or an MPU (Micro Processing Unit, micro processing unit). For example, the flow control unit 200 controls the first on-off valve 111 , the first regulating valve 112 , the second on-off valve 121 , and the second regulating valve 122 .

首先,針對第1供給部110之控制方法進行說明。流量控制部200朝第1開閉閥111輸出開閉信號SNA。開閉信號SNA表示第1供給管114之打開狀態及關閉狀態內之任一狀態。詳細而言,流量控制部200藉由將表示打開狀態之開閉信號SNA輸出至第1開閉閥111,而第1開閉閥111將第1供給管114打開。另一方面,流量控制部200藉由將表示關閉狀態之開閉信號SNA輸出至第1開閉閥111,而第1開閉閥111將第1供給管114關閉。First, a method of controlling the first supply unit 110 will be described. The flow control unit 200 outputs an opening and closing signal SNA to the first opening and closing valve 111 . The opening/closing signal SNA indicates either the open state or the closed state of the first supply pipe 114 . Specifically, the flow control unit 200 outputs the opening and closing signal SNA indicating the open state to the first on-off valve 111 , and the first on-off valve 111 opens the first supply pipe 114 . On the other hand, the flow control unit 200 outputs the opening and closing signal SNA indicating the closed state to the first on-off valve 111 , and the first on-off valve 111 closes the first supply pipe 114 .

又,流量控制部200朝第1調整閥112輸出開度信號SMA。開度信號SMA表示第1調整閥112之開度。例如,於執行噴嘴8朝向基板W噴出第1特定流量之沖洗液之處理之情形下,開度信號SMA包含第1特定開度量,前述第1特定開度量用於以第1供給管114中流通之沖洗液之流量成為第1特定流量之方式將第1調整閥112打開。詳細而言,流量控制部200藉由將包含第1特定開度量之開度信號AMA輸出至第1調整閥112,而第1調整閥112以第1特定開度量打開。Furthermore, the flow rate control unit 200 outputs an opening degree signal SMA to the first regulating valve 112 . The opening degree signal SMA indicates the opening degree of the first regulating valve 112 . For example, in the case where the nozzle 8 ejects a rinse liquid of a first specific flow rate toward the substrate W, the opening degree signal SMA includes the first specific opening amount, and the first specific opening amount is used to flow through the first supply pipe 114. The first regulating valve 112 is opened so that the flow rate of the flushing liquid becomes the first specific flow rate. Specifically, the flow control unit 200 outputs the opening signal AMA including the first specific opening amount to the first regulating valve 112, and the first regulating valve 112 opens with the first specific opening amount.

進而,流量控制部200可對第1調整閥112之開度進行回饋控制。詳細而言,流量控制部200自第1流量計113接收第1流量信號FA。流量控制部200於第1流量信號FA所示之流量多於第1特定流量時,將表示較第1特定開度量為小之開度量之開度信號AMA輸出至第1調整閥112。另一方面,流量控制部200於第1流量信號FA所示之流量少於第1特定流量時,將表示較第1特定開度量為大之開度量之開度信號AMA輸出至第1調整閥112。其結果,流量控制部200將第1流量信號FA所示之流量與第1特定流量進行比較,第1供給管114中流通之沖洗液之流量成為第1特定流量。Furthermore, the flow control unit 200 can perform feedback control on the opening degree of the first regulating valve 112 . Specifically, the flow control unit 200 receives the first flow signal FA from the first flow meter 113 . The flow rate control unit 200 outputs an opening signal AMA indicating an opening amount smaller than the first specific opening amount to the first regulating valve 112 when the flow rate indicated by the first flow rate signal FA is greater than the first specific flow rate. On the other hand, when the flow rate indicated by the first flow signal FA is less than the first specified flow rate, the flow control unit 200 outputs the opening signal AMA indicating an opening amount larger than the first specified opening amount to the first regulating valve. 112. As a result, the flow rate control unit 200 compares the flow rate indicated by the first flow rate signal FA with the first specific flow rate, and the flow rate of the flushing liquid flowing through the first supply pipe 114 becomes the first specific flow rate.

更詳細而言,回饋控制包含基於第1流量信號FA之比例控制、積分控制及微分控制。流量控制部200基於第1流量信號FA所示之流量,執行比例控制、積分控制及微分控制,將表示執行比例控制、積分控制及微分控制後之開度量之開度信號AMA輸出至第1調整閥112。回饋控制為例如PID控制。More specifically, the feedback control includes proportional control, integral control, and differential control based on the first flow signal FA. The flow control unit 200 performs proportional control, integral control, and differential control based on the flow rate indicated by the first flow signal FA, and outputs the opening degree signal AMA indicating the opening amount after the execution of the proportional control, integral control, and differential control to the first regulator. Valve 112. Feedback control is, for example, PID control.

又,於執行噴嘴8朝向基板W噴出與第1特定流量不同之第2特定流量之沖洗液之處理之情形下,開度信號SMA包含第2特定開度量,前述第2特定開度量用於以第1供給管114中流通之沖洗液之流量成為第2特定流量之方式將第1調整閥112打開。詳細而言,流量控制部200藉由將包含第2特定開度量之開度信號AMA輸出至第1調整閥112,而第1調整閥112以第2特定開度量打開。而且,流量控制部200對第1調整閥112之開度進行回饋控制。其結果,流量控制部200將第1流量信號FA所示之流量與第2特定流量進行比較,第1供給管114中流通之沖洗液之流量成為第2特定流量。In addition, in the case where the nozzle 8 ejects a rinse liquid at a second specific flow rate different from the first specific flow rate toward the substrate W, the opening degree signal SMA includes the second specific opening amount, and the second specific opening amount is used to The first regulating valve 112 is opened so that the flow rate of the flushing liquid flowing through the first supply pipe 114 becomes the second specific flow rate. Specifically, the flow rate control unit 200 outputs the opening signal AMA including the second specific opening amount to the first regulating valve 112, and the first regulating valve 112 opens with the second specific opening amount. Furthermore, the flow control unit 200 performs feedback control on the opening degree of the first regulating valve 112 . As a result, the flow rate control unit 200 compares the flow rate indicated by the first flow rate signal FA with the second specific flow rate, and the flow rate of the flushing liquid flowing through the first supply pipe 114 becomes the second specific flow rate.

繼而,針對第2供給部120之控制方法進行說明。流量控制部200朝第2開閉閥121輸出開閉信號SNB。開閉信號SNB表示第2供給管124之打開狀態及關閉狀態內之任一狀態。詳細而言,流量控制部200藉由將表示打開狀態之開閉信號SNB輸出至第2開閉閥121,而第2開閉閥121將第2供給管124打開。另一方面,流量控制部200藉由將表示關閉狀態之開閉信號SNB輸出至第2開閉閥121,而第2開閉閥121將第2供給管124關閉。Next, the control method of the 2nd supply part 120 is demonstrated. The flow control unit 200 outputs an opening and closing signal SNB to the second on-off valve 121 . The opening and closing signal SNB indicates either the open state or the closed state of the second supply pipe 124 . Specifically, the flow control unit 200 outputs the opening and closing signal SNB indicating the open state to the second on-off valve 121 , and the second on-off valve 121 opens the second supply pipe 124 . On the other hand, the flow control unit 200 outputs the opening and closing signal SNB indicating the closed state to the second on-off valve 121 , and the second on-off valve 121 closes the second supply pipe 124 .

又,流量控制部200朝第2調整閥122輸出開度信號SMB。開度信號SMB表示第2調整閥122之開度。例如,於執行噴嘴8朝向基板W噴出第3特定流量之沖洗液之處理之情形下,開度信號SMB包含第3特定開度量,前述第3特定開度量用於以第2供給管124中流通之沖洗液之流量成為第3特定流量之方式將第2調整閥122打開。詳細而言,流量控制部200藉由將包含第3特定開度量之開度信號AMB輸出至第2調整閥122,而第2調整閥122以第2特定開度量打開。而且,流量控制部200可對第2調整閥122之開度進行回饋控制。其結果,流量控制部200將第2流量信號FB所示之流量與第3特定流量進行比較,第2供給管124中流通之沖洗液之流量成為第3特定流量。Also, the flow rate control unit 200 outputs an opening degree signal SMB to the second regulating valve 122 . The opening degree signal SMB indicates the opening degree of the second regulating valve 122 . For example, in the case where the nozzle 8 ejects a rinse liquid of a third specific flow rate toward the substrate W, the opening degree signal SMB includes a third specific opening amount for flowing through the second supply pipe 124. The second regulating valve 122 is opened so that the flow rate of the flushing liquid becomes the third specific flow rate. Specifically, the flow rate control unit 200 outputs the opening degree signal AMB including the third specific opening amount to the second regulating valve 122, and the second regulating valve 122 opens at the second specific opening amount. Furthermore, the flow control unit 200 can perform feedback control on the opening degree of the second regulating valve 122 . As a result, the flow rate control unit 200 compares the flow rate indicated by the second flow rate signal FB with the third specific flow rate, and the flow rate of the flushing liquid flowing through the second supply pipe 124 becomes the third specific flow rate.

繼而,參照圖5,說明基板處理裝置100執行之「第1基板處理(模式1)」。圖5係顯示實施形態1之沖洗液供給部4之示意圖。此外,圖5係顯示流量控制部200執行「第1基板處理」之狀態之圖。「第1基板處理」係噴嘴8朝向基板W之上表面噴出第1特定流量之沖洗液。又,以白色表示打開之閥,以黑色表示關閉之閥。Next, "first substrate processing (mode 1)" performed by the substrate processing apparatus 100 will be described with reference to FIG. 5 . Fig. 5 is a schematic diagram showing the rinse liquid supply unit 4 of the first embodiment. In addition, FIG. 5 is a diagram showing a state in which the flow control unit 200 executes the "first substrate processing". "First substrate processing" means that the nozzle 8 sprays the rinse liquid at a first specific flow rate toward the upper surface of the substrate W. Also, open valves are shown in white, and closed valves are shown in black.

於「第1基板處理」中,控制部102將噴嘴8配置於基板W之中心部CT。而且,流量控制部200藉由將表示關閉狀態之開閉信號SNB輸出至第2開閉閥121,而第2開閉閥121將第2供給管124關閉。另一方面,流量控制部200藉由將表示打開狀態之開閉信號SNA輸出至第1開閉閥111,而第1開閉閥111將第1供給管114打開。換言之,於「第1基板處理」中不利用第2供給部120。In the "first substrate processing", the control unit 102 arranges the nozzle 8 at the center portion CT of the substrate W. Furthermore, the flow control unit 200 outputs the opening and closing signal SNB indicating the closed state to the second on-off valve 121 , and the second on-off valve 121 closes the second supply pipe 124 . On the other hand, the flow control unit 200 outputs the opening and closing signal SNA indicating an open state to the first on-off valve 111 , and the first on-off valve 111 opens the first supply pipe 114 . In other words, the second supply unit 120 is not used in the "first substrate processing".

而且,流量控制部200藉由將表示第1特定開度量之開度信號AMA輸出至第1調整閥112,而第1調整閥112以第1特定開度量打開。流量控制部200自第1流量計113接收第1流量信號FA。流量控制部200將第1流量信號FA所示之流量與第1特定流量進行比較,第1供給管114中流通之沖洗液之流量成為第1特定流量。若第1供給管114中流通之沖洗液之流量成為第1特定流量,則流量控制部200停止將開度信號AMA輸出至第1調整閥112。其結果,噴嘴8朝向基板W之上表面持續噴出第1特定流量之沖洗液。而且,噴嘴移動機構9使噴嘴8沿軌跡TJ1於中心部CT與邊緣部EG之間移動。Furthermore, the flow control unit 200 outputs the opening degree signal AMA indicating the first specific opening amount to the first regulating valve 112, so that the first regulating valve 112 is opened at the first specific opening amount. The flow control unit 200 receives the first flow signal FA from the first flow meter 113 . The flow rate control unit 200 compares the flow rate indicated by the first flow rate signal FA with the first specific flow rate, and the flow rate of the flushing liquid flowing through the first supply pipe 114 becomes the first specific flow rate. When the flow rate of the flushing liquid flowing through the first supply pipe 114 becomes the first specific flow rate, the flow rate control unit 200 stops outputting the opening degree signal AMA to the first regulating valve 112 . As a result, the nozzle 8 continuously sprays the rinse liquid at the first specific flow rate toward the upper surface of the substrate W. As shown in FIG. And the nozzle moving mechanism 9 moves the nozzle 8 between the center part CT and the edge part EG along trajectory TJ1.

繼而,參照圖3(a)至圖7,說明與「第1基板處理(模式1)」不同之「第2基板處理(模式2)」。「第2基板處理」係噴嘴8朝向基板W之上表面之包含邊緣部EG之周緣區域噴出第1噴出量之沖洗液,且噴嘴8朝向基板W之上表面之包含中心部CT之中央區域噴出第2噴出量之沖洗液之處理。基板W之上表面之包含邊緣部EG之周緣區域係「基板之周緣部」之一例。具體而言,基板W之上表面之包含邊緣部EG之周緣區域為例如基板W徑向之特定值以上緣側。基板W之上表面之包含中心部CT之中央區域係「基板之中央部」之一例。換言之,切換噴出第1噴出量之沖洗液之狀態、與噴出第2噴出量之沖洗液之狀態。第2噴出量多於第1噴出量。其結果,可防止沖洗液向基板W之背面迂迴繞入。第1噴出量為例如500 ml/分,第2噴出量為例如2000 ml/分。Next, "second substrate processing (mode 2)" different from "first substrate processing (mode 1)" will be described with reference to Fig. 3(a) to Fig. 7 . "Second substrate processing" is that the nozzle 8 sprays the rinse liquid of the first discharge amount toward the peripheral area including the edge portion EG on the upper surface of the substrate W, and the nozzle 8 ejects toward the central area including the central portion CT on the upper surface of the substrate W The treatment of the flushing liquid of the second spray volume. The peripheral region including the edge portion EG on the upper surface of the substrate W is an example of “the peripheral portion of the substrate”. Specifically, the peripheral area including the edge portion EG on the upper surface of the substrate W is, for example, the upper edge side of a certain value in the radial direction of the substrate W. The central region including the central portion CT on the upper surface of the substrate W is an example of the “central portion of the substrate”. In other words, the state of spraying the rinse liquid of the first discharge amount and the state of spraying the rinse liquid of the second discharge amount are switched. The second discharge amount is larger than the first discharge amount. As a result, it is possible to prevent the rinse liquid from detouring to the back surface of the substrate W. FIG. The first discharge amount is, for example, 500 ml/min, and the second discharge amount is, for example, 2000 ml/min.

於實施形態1中,為了於第2期間內執行「第2基板處理」,而於第1期間內執行「第1準備處理」。第1期間係較第2期間前面之期間。第1期間雖然無特別限定,但為緊鄰在執行「第2基板處理」之前之期間。In the first embodiment, in order to execute the "second substrate processing" in the second period, the "first preparatory processing" is executed in the first period. The first period is the period preceding the second period. Although the first period is not particularly limited, it is a period immediately before performing the "second substrate processing".

再次參照圖3(a)及圖5,說明「第1準備處理」。「第1準備處理」係預先調整第1供給管114中流通之沖洗液之流量之處理。於圖5所示之「第1基板處理」中,將噴嘴8配置於基板W之中心部CT,但於「第1準備處理」中,例如,將噴嘴8配置於特定位置(HOME位置)。特定位置雖然無特別限定,但為例如基板W之外部PO。Referring again to FIG. 3( a ) and FIG. 5 , the "first preparation process" will be described. The "first preparation process" is a process of adjusting the flow rate of the flushing liquid flowing through the first supply pipe 114 in advance. In the "first substrate processing" shown in FIG. 5 , the nozzle 8 is arranged at the center portion CT of the substrate W, but in the "first preparatory processing", for example, the nozzle 8 is arranged at a specific position (HOME position). Although the specific position is not particularly limited, it is, for example, the outer PO of the substrate W.

於「第1準備處理」中,控制部102將噴嘴8配置於基板W之外部PO。而且,流量控制部200藉由將表示關閉狀態之開閉信號SNB輸出至第2開閉閥121,而第2開閉閥121將第2供給管124關閉。另一方面,流量控制部200藉由將表示打開狀態之開閉信號SNA輸出至第1開閉閥111,而第1開閉閥111將第1供給管114打開。In the "first preparation process", the control unit 102 arranges the nozzle 8 on the outer PO of the substrate W. Furthermore, the flow control unit 200 outputs the opening and closing signal SNB indicating the closed state to the second on-off valve 121 , and the second on-off valve 121 closes the second supply pipe 124 . On the other hand, the flow control unit 200 outputs the opening and closing signal SNA indicating an open state to the first on-off valve 111 , and the first on-off valve 111 opens the first supply pipe 114 .

而且,流量控制部200藉由將包含第1開度量之開度信號AMA輸出至第1調整閥112,而第1調整閥112以第1開度量打開,且前述第1開度量用於以第1供給管114中流通之沖洗液之流量成為第1流量之方式將第1調整閥112打開。第1流量係第1噴出量與第2噴出量之差分。第1流量為例如1500 ml/分。Moreover, the flow control unit 200 outputs the opening signal AMA including the first opening amount to the first regulating valve 112, and the first regulating valve 112 is opened at the first opening amount, and the first opening amount is used to control the first opening amount by the first opening amount. 1. The first regulating valve 112 is opened so that the flow rate of the flushing liquid flowing through the supply pipe 114 becomes the first flow rate. The first flow rate is the difference between the first discharge amount and the second discharge amount. The first flow rate is, for example, 1500 ml/min.

流量控制部200自第1流量計113接收第1流量信號FA。流量控制部200將第1流量信號所示之流量與第1流量進行比較,第1供給管114中流通之沖洗液之流量成為第1流量。其結果,噴嘴8朝向外部PO噴出第1流量之沖洗液。此時,第1調整閥112之開度為第1開度。換言之,第1開度表示用於在第1供給管114中流通第1流量之沖洗液之第1調整閥112之開度。而且,流量控制部200將執行「第2基板處理」時之第1調整閥112之開度決定為第1開度。The flow control unit 200 receives the first flow signal FA from the first flow meter 113 . The flow rate control unit 200 compares the flow rate indicated by the first flow rate signal with the first flow rate, and the flow rate of the flushing liquid flowing through the first supply pipe 114 becomes the first flow rate. As a result, the nozzle 8 ejects the rinse liquid at the first flow rate toward the outside PO. At this time, the opening degree of the first regulating valve 112 is the first opening degree. In other words, the first opening degree represents the opening degree of the first regulating valve 112 for passing the flushing fluid of the first flow rate through the first supply pipe 114 . Furthermore, the flow control unit 200 determines the opening degree of the first regulating valve 112 at the time of performing the "second substrate processing" as the first opening degree.

流量控制部200於將第1調整閥112之開度決定為第1開度之後,流量控制部200藉由將表示關閉狀態之開閉信號SNA輸出至第1開閉閥111,而第1開閉閥111將第1供給管114關閉。其結果,第1供給管114中流通之沖洗液之流量成為0。After the flow control unit 200 determines the opening degree of the first regulating valve 112 as the first opening degree, the flow control unit 200 outputs the opening and closing signal SNA indicating the closed state to the first opening and closing valve 111, and the first opening and closing valve 111 The first supply pipe 114 is closed. As a result, the flow rate of the flushing liquid flowing through the first supply pipe 114 becomes zero.

繼而,參照圖6及圖7,說明「第2基板處理」。圖6及圖7係顯示實施形態1之沖洗液供給部4之示意圖。此外,圖6係顯示噴嘴8朝向基板W之上表面之包含邊緣部EG之周緣區域噴出第1噴出量之沖洗液之狀態之圖。又,圖7係顯示噴嘴8朝向基板W之上表面之包含中心部CT之中央區域噴出第2噴出量之沖洗液之狀態之圖。Next, "second substrate processing" will be described with reference to FIGS. 6 and 7 . 6 and 7 are schematic diagrams showing the rinse liquid supply unit 4 of the first embodiment. In addition, FIG. 6 is a diagram showing a state in which the nozzle 8 sprays the first discharge amount of rinse liquid toward the peripheral region including the edge portion EG on the upper surface of the substrate W. As shown in FIG. 7 is a diagram showing a state in which the nozzle 8 sprays the rinse liquid of the second discharge amount toward the central region including the central portion CT on the upper surface of the substrate W. As shown in FIG.

如圖6所示,流量控制部200藉由將表示打開狀態之開閉信號SNB輸出至第2開閉閥121,而第2開閉閥121將第2供給管124打開。又,流量控制部200將表示第2開度量之開度信號SMB輸出至第2調整閥122,前述第2開度量用於以第2供給管124中流通之沖洗液之流量成為第2流量之方式將第2調整閥122打開。於第2供給管124中流通第2流量之沖洗液。第2流量為第1噴出量。As shown in FIG. 6 , the flow control unit 200 outputs the opening and closing signal SNB indicating the open state to the second on-off valve 121 , and the second on-off valve 121 opens the second supply pipe 124 . Furthermore, the flow control unit 200 outputs to the second regulating valve 122 an opening signal SMB indicating a second opening amount for making the flow rate of the flushing liquid flowing through the second supply pipe 124 the second flow rate. In this way, the second regulating valve 122 is opened. The flushing liquid of the second flow rate flows through the second supply pipe 124 . The second flow rate is the first discharge amount.

流量控制部200預先將表示第1開度之開度信號SMA輸出至第1調整閥112。又,流量控制部200藉由將表示關閉狀態之開閉信號SNA輸出至第1開閉閥111,而第1開閉閥111將第1供給管114關閉。換言之,流量控制部200於將第1調整閥112之開度設為第1開度之狀態下,將表示關閉狀態之開閉信號輸出至第1開閉閥111。其結果,噴嘴8朝向基板W噴出第1噴出量之沖洗液。The flow control unit 200 outputs an opening degree signal SMA indicating the first opening degree to the first regulating valve 112 in advance. Furthermore, the flow control unit 200 outputs the opening and closing signal SNA indicating the closed state to the first on-off valve 111 , and the first on-off valve 111 closes the first supply pipe 114 . In other words, the flow control unit 200 outputs an opening/closing signal indicating a closed state to the first opening/closing valve 111 in a state where the opening degree of the first regulating valve 112 is set to the first opening degree. As a result, the nozzle 8 discharges the rinse liquid in the first discharge amount toward the substrate W. As shown in FIG.

另一方面,如圖7所示,流量控制部200藉由將表示打開狀態之開閉信號SNB輸出至第2開閉閥121,而第2開閉閥121將第2供給管124打開。又,流量控制部200將表示第2開度量之開度信號SMB輸出至第2調整閥122,前述第2開度量用於以第2供給管124中流通之沖洗液之流量成為第2流量之方式將第2調整閥122打開。於第2供給管124中流通第2流量之沖洗液。On the other hand, as shown in FIG. 7 , the flow control unit 200 outputs the opening and closing signal SNB indicating the open state to the second on-off valve 121 , and the second on-off valve 121 opens the second supply pipe 124 . Furthermore, the flow control unit 200 outputs to the second regulating valve 122 an opening signal SMB indicating a second opening amount for making the flow rate of the flushing liquid flowing through the second supply pipe 124 the second flow rate. In this way, the second regulating valve 122 is opened. The flushing liquid of the second flow rate flows through the second supply pipe 124 .

又,流量控制部200預先將表示第1開度之開度信號SMA輸出至第1調整閥112。又,流量控制部200藉由將表示打開狀態之開閉信號SNA輸出至第1開閉閥111,而第1開閉閥111將第1供給管114打開。換言之,流量控制部200於將第1調整閥112之開度設為第1開度之狀態下,將表示打開狀態之開閉信號輸出至第1開閉閥111。其結果,噴嘴8朝向基板W噴出第2噴出量之沖洗液。Furthermore, the flow rate control unit 200 outputs an opening degree signal SMA indicating the first opening degree to the first regulating valve 112 in advance. Moreover, the flow rate control part 200 outputs the opening-closing signal SNA which shows an open state to the 1st on-off valve 111, and the 1st on-off valve 111 opens the 1st supply pipe 114. In other words, the flow control unit 200 outputs an opening/closing signal indicating an open state to the first on-off valve 111 in a state where the opening degree of the first regulating valve 112 is set to the first opening degree. As a result, the nozzle 8 discharges the rinse liquid in the second discharge amount toward the substrate W. As shown in FIG.

此處,參照圖8,針對噴出第1噴出量之沖洗液之狀態、與噴出第2噴出量之沖洗液之狀態之切換,進行說明。圖8係顯示沖洗液自噴嘴8之噴出量與時間之關係之一例之圖(曲線圖)。如圖8所示,橫軸表示時間,縱軸表示噴出量。Here, referring to FIG. 8 , the switching between the state of ejecting the rinse liquid of the first ejection amount and the state of ejecting the rinse liquid of the second ejection amount will be described. FIG. 8 is a graph (graph) showing an example of the relationship between the discharge amount of the flushing liquid from the nozzle 8 and time. As shown in FIG. 8 , the horizontal axis represents time, and the vertical axis represents discharge amount.

時間T1表示流量控制部200將表示打開狀態之開閉信號SNA輸出至第1開閉閥111之時間。時間T2表示流量控制部200將表示關閉狀態之開閉信號SNA輸出至第1開閉閥111之時間。時間T3表示流量控制部200將表示關閉狀態之開閉信號SNB輸出至第2開閉閥121之時間。The time T1 represents the time when the flow control unit 200 outputs the opening and closing signal SNA indicating the open state to the first opening and closing valve 111 . The time T2 represents the time when the flow control unit 200 outputs the opening and closing signal SNA indicating the closed state to the first opening and closing valve 111 . Time T3 represents the time when the flow control unit 200 outputs the opening and closing signal SNB indicating the closed state to the second opening and closing valve 121 .

又,第1噴出量X1為例如500 ml/分。第2噴出量X2為例如2000 ml/分。Also, the first discharge amount X1 is, for example, 500 ml/min. The second discharge amount X2 is, for example, 2000 ml/min.

自時間T1起於短期間ΔT(例如1秒以內)內,沖洗液之噴出量自第1噴出量X1變化至第2噴出量X2。又,沖洗液之噴出量無波動地自第1噴出量X1變化至第2噴出量X2。波動例如意指沖洗液之噴出量重複多於或少於第2噴出量X2。換言之,波動意指噴出量不穩定。Within a short period ΔT (for example, within 1 second) from the time T1, the discharge amount of the rinse liquid changes from the first discharge amount X1 to the second discharge amount X2. Also, the discharge amount of the rinse liquid is changed from the first discharge amount X1 to the second discharge amount X2 without fluctuation. The fluctuation means, for example, that the discharge amount of the flushing liquid is repeatedly greater or less than the second discharge amount X2. In other words, fluctuation means that the ejection amount is not stable.

以上,針對本發明之實施形態1進行了說明。根據實施形態1,流量控制部200於第2期間(「第2基板處理」)內,在將第1調整閥112之開度設為第1開度之狀態下,不對第1調整閥112之開度進行回饋控制,將表示打開狀態之開閉信號輸出至第1開閉閥111。其結果,與對第1調整閥112之開度進行回饋控制時進行比較,可朝基板W更快速地供給第2噴出量X2之沖洗液。又,與對第1調整閥112之開度進行回饋控制時進行比較,可將第2噴出量X2之沖洗液無波動地供給至基板W。In the above, Embodiment 1 of the present invention has been described. According to Embodiment 1, the flow rate control unit 200 does not control the opening of the first regulating valve 112 during the second period ("second substrate processing") with the opening degree of the first regulating valve 112 at the first opening degree. The opening degree is feedback-controlled, and an on-off signal indicating the open state is output to the first on-off valve 111 . As a result, the rinse liquid of the second discharge amount X2 can be supplied to the substrate W more quickly than when the opening degree of the first regulating valve 112 is feedback-controlled. Moreover, compared with the case where the opening degree of the first regulating valve 112 is feedback-controlled, the rinse liquid of the second discharge amount X2 can be supplied to the substrate W without fluctuation.

又,回饋控制由於包含基於第1流量信號FA之比例控制、積分控制及微分控制,故流量控制部200可將第1調整閥112之開度決定為精度更高之第1開度。Also, since the feedback control includes proportional control, integral control, and differential control based on the first flow signal FA, the flow control unit 200 can determine the opening degree of the first regulating valve 112 as the first opening degree with higher accuracy.

又,由於第1噴出量X1之沖洗液係自第2供給管124供給之沖洗液,第2噴出量X2之沖洗液係自第1供給管114供給之沖洗液、與自第2供給管124供給之沖洗液,故於第2期間內,可抑制波動且更快速地切換:將第1噴出量X1之沖洗液朝向基板W之上表面之包含邊緣部EG之周緣區域噴出、及將第2噴出量X2之沖洗液朝向基板W之上表面之包含中心部CT之中央區域噴出。Also, since the flushing liquid of the first ejection amount X1 is the flushing liquid supplied from the second supply pipe 124, the flushing liquid of the second ejection amount X2 is the flushing liquid supplied from the first supply pipe 114 and the flushing liquid supplied from the second supply pipe 124. The supplied rinsing liquid, therefore, can suppress fluctuations and switch more quickly during the second period: the rinsing liquid of the first ejection amount X1 is ejected toward the peripheral region of the upper surface of the substrate W including the edge portion EG, and the second ejection amount X1 The rinsing liquid of the ejection amount X2 is ejected toward the central region of the upper surface of the substrate W including the central portion CT.

而且,於旋轉馬達部5使基板W與旋轉卡盤3一體地旋轉之情形下,可朝基板W之所期望之位置更快速地噴出第2噴出量X2之沖洗液。進而,於噴嘴移動機構9使噴嘴8移動之情形下,可朝基板W之所期望之位置更快速地噴出第2噴出量X2之沖洗液。Furthermore, when the rotation motor unit 5 rotates the substrate W and the spin chuck 3 integrally, the rinse liquid of the second discharge amount X2 can be discharged toward a desired position of the substrate W more quickly. Furthermore, when the nozzle moving mechanism 9 moves the nozzle 8, the rinse liquid of the second discharge amount X2 can be discharged toward a desired position of the substrate W more quickly.

更詳細而言,編碼器94將驅動部旋轉量信號輸出至控制裝置101,且輸出至流量控制部200。流量控制部200於第2期間內,基於編碼器94之驅動部旋轉量信號,將第1供給管114開閉。例如,於驅動部旋轉量信號所示之旋轉量未達特定旋轉量時,將表示關閉狀態之開閉信號SNA輸出至第1開閉閥111。具體而言,於驅動部旋轉量信號所示之脈衝數未達臨限值時,不將表示打開狀態之開閉信號SNA輸出至第1開閉閥111。其結果,噴嘴8將第1噴出量X1之沖洗液朝向基板W之包含邊緣部EG之周緣區域噴出。More specifically, the encoder 94 outputs the drive unit rotation amount signal to the control device 101 and outputs it to the flow rate control unit 200 . The flow control unit 200 opens and closes the first supply pipe 114 based on the drive unit rotation amount signal from the encoder 94 during the second period. For example, when the rotation amount indicated by the rotation amount signal of the driving part is less than a specific rotation amount, the on-off signal SNA indicating the closed state is output to the first on-off valve 111 . Specifically, when the number of pulses indicated by the rotation amount signal of the drive unit does not reach the threshold value, the on-off signal SNA indicating the open state is not output to the first on-off valve 111 . As a result, the nozzle 8 discharges the rinse liquid in the first discharge amount X1 toward the peripheral region of the substrate W including the edge portion EG.

另一方面,於驅動部旋轉量信號表示之旋轉量為特定旋轉量以上時,將表示打開狀態之開閉信號SNA輸出至第1開閉閥111。具體而言,於驅動部旋轉量信號所示之脈衝數為臨限值以上時,將表示打開狀態之開閉信號SNA輸出至第1開閉閥111。換言之,於噴嘴8配置於基板W之包含中心部CT之中央區域之上方時將表示打開狀態之開閉信號SNA輸出至第1開閉閥111。其結果,噴嘴8將第2噴出量X2之沖洗液朝向基板W之包含中心部CT之中央區域噴出。因此,流量控制部200可不自控制部102(控制基板處理裝置100之各部之動作之電腦)接收控制信號,基於驅動部旋轉量信號而控制第1開閉閥111。On the other hand, when the rotation amount indicated by the drive unit rotation amount signal is equal to or greater than a specific rotation amount, the opening/closing signal SNA indicating an open state is output to the first on/off valve 111 . Specifically, when the number of pulses indicated by the drive unit rotation amount signal is equal to or greater than the threshold value, the on-off signal SNA indicating the open state is output to the first on-off valve 111 . In other words, when the nozzle 8 is arranged above the central region including the central portion CT of the substrate W, the on-off signal SNA indicating the open state is output to the first on-off valve 111 . As a result, the nozzle 8 discharges the rinse liquid of the second discharge amount X2 toward the central region of the substrate W including the central portion CT. Therefore, the flow control unit 200 can control the first on-off valve 111 based on the drive unit rotation amount signal without receiving a control signal from the control unit 102 (computer that controls the operation of each unit of the substrate processing apparatus 100 ).

此外,於自第1期間變為第2期間時,自進行第1調整閥112之開度之回饋控制之狀態切換為不進行回饋控制之狀態,但自進行第1調整閥112之開度之回饋控制之狀態切換為不進行回饋控制之狀態之時序,可為例如自第1期間起經過一定期間之時序,又可為噴嘴8移動至特定位置(處理開始位置)之時序。移動至特定位置之具體的時序,可為例如圖3(a)之噴嘴8之自基板W之外部PO配置於中心部CT之時序。In addition, when changing from the first period to the second period, the state of feedback control of the opening of the first regulating valve 112 is switched to the state of not performing feedback control, but the state of performing feedback control of the opening of the first regulating valve 112 The timing at which the feedback control state is switched to the non-feedback control state may be, for example, the timing at which a certain period elapses from the first period, or the timing at which the nozzle 8 moves to a specific position (processing start position). The specific timing of moving to a specific position can be, for example, the timing of disposing the nozzle 8 from the outer PO of the substrate W to the central portion CT of FIG. 3( a ).

繼而,參照圖9及圖10,說明本實施形態之基板處理方法。本實施形態之基板處理方法,係由參照圖1~圖7所說明之基板處理裝置100執行。圖9及圖10係顯示藉由本實施形態之基板處理裝置100具備之控制部102與流量控制部200進行之處理之流程圖。Next, the substrate processing method according to this embodiment will be described with reference to FIGS. 9 and 10 . The substrate processing method of this embodiment is performed by the substrate processing apparatus 100 described with reference to FIGS. 1 to 7 . 9 and 10 are flowcharts showing processes performed by the control unit 102 and the flow rate control unit 200 included in the substrate processing apparatus 100 of the present embodiment.

首先,流量控制部200藉由將表示關閉狀態之開閉信號SNA輸出至第1開閉閥111,使第1開閉閥111將第1供給管114關閉。又,流量控制部200藉由將表示關閉狀態之開閉信號SNB輸出至第2開閉閥121,使第2開閉閥121將第2供給管124關閉(步驟S101)。First, the flow control unit 200 outputs the opening/closing signal SNA indicating the closed state to the first opening/closing valve 111 so that the first opening/closing valve 111 closes the first supply pipe 114 . Moreover, the flow control unit 200 outputs the opening and closing signal SNB indicating the closed state to the second opening and closing valve 121, so that the second opening and closing valve 121 closes the second supply pipe 124 (step S101).

其次,以噴嘴8移動至特定位置之方式,控制部102控制噴嘴移動機構9(步驟S2)。特定位置為例如基板W之外部PO。Next, the control part 102 controls the nozzle moving mechanism 9 so that the nozzle 8 may move to a specific position (step S2). The specific location is, for example, the outer PO of the substrate W.

其次,流量控制部200藉由將表示打開狀態之開閉信號SNB輸出至第1開閉閥111,使第1開閉閥111將第1供給管114打開(步驟S103)。Next, the flow control unit 200 outputs the opening and closing signal SNB indicating the open state to the first opening and closing valve 111, so that the first opening and closing valve 111 opens the first supply pipe 114 (step S103).

其次,流量控制部200自第1流量計113接收第1流量信號FA(步驟S104)。Next, the flow control unit 200 receives the first flow signal FA from the first flow meter 113 (step S104).

其次,流量控制部200判定第1流量信號FA所示之流量與第1流量之差是否為臨限值以上(步驟S105)。於控制部102判定為第1流量信號FA所示之流量與第1流量之差為臨限值以上時(步驟S105之是),流量控制部200基於第1流量信號FA所示之流量,執行比例控制、積分控制及微分控制,並將表示執行比例控制、積分控制及微分控制後之開度量之開度信號AMA,輸出至第1調整閥112(步驟S106)。Next, the flow rate control unit 200 determines whether the difference between the flow rate indicated by the first flow rate signal FA and the first flow rate is equal to or greater than a threshold value (step S105). When the control unit 102 determines that the difference between the flow rate indicated by the first flow signal FA and the first flow rate is greater than the threshold value (Yes in step S105), the flow control unit 200 executes the flow rate based on the flow rate indicated by the first flow signal FA. Proportional control, integral control, and differential control, and an opening degree signal AMA indicating the opening amount after proportional control, integral control, and differential control is output to the first adjusting valve 112 (step S106).

另一方面,於控制部102判定為第1流量信號FA所示之流量與第1流量之差非為臨限值以上時(步驟S105之否),流量控制部200藉由將表示關閉狀態之開閉信號SNA輸出至第1開閉閥111,使第1開閉閥111將第1供給管114關閉。又,流量控制部200藉由將表示打開狀態之開閉信號SNB輸出至第2開閉閥121,使第2開閉閥121將第2供給管124打開(步驟S107)。換言之,流量控制部200將執行「第2基板處理」時之第1調整閥112之開度定為第1開度。On the other hand, when the control unit 102 determines that the difference between the flow rate indicated by the first flow rate signal FA and the first flow rate is not greater than the threshold value (NO in step S105), the flow rate control unit 200 sets the closed state to The on-off signal SNA is output to the first on-off valve 111 so that the first on-off valve 111 closes the first supply pipe 114 . Furthermore, the flow control unit 200 outputs the opening and closing signal SNB indicating the open state to the second opening and closing valve 121, so that the second opening and closing valve 121 opens the second supply pipe 124 (step S107). In other words, the flow control unit 200 sets the opening degree of the first regulating valve 112 at the time of performing the "second substrate processing" as the first opening degree.

而後,流量控制部200於「第2基板處理」之執行中,判定噴嘴8之位置是否為基板W之包含中心部CT之中央區域(步驟S108)。於流量控制部200判定為噴嘴8之位置為基板W之包含中心部CT之中央區域時(步驟S108之是),流量控制部200藉由將表示打開狀態之開閉信號SNA輸出至第1開閉閥111,而第1開閉閥111將第1供給管114打開(步驟S109)。其結果,噴嘴8朝向基板W噴出第2噴出量X2之沖洗液。Then, the flow rate control unit 200 determines whether or not the position of the nozzle 8 is in the central region including the central portion CT of the substrate W during execution of the "second substrate processing" (step S108 ). When the flow control unit 200 determines that the position of the nozzle 8 is the central region including the central portion CT of the substrate W (Yes in step S108), the flow control unit 200 outputs the opening and closing signal SNA indicating the open state to the first opening and closing valve. 111, and the first on-off valve 111 opens the first supply pipe 114 (step S109). As a result, the nozzle 8 discharges the rinse liquid of the second discharge amount X2 toward the substrate W. As shown in FIG.

另一方面,於流量控制部200判定為噴嘴8之位置非為基板W之包含中心部CT之中央區域時(步驟S108之否),流量控制部200將表示關閉狀態之開閉信號SNA輸出至第1開閉閥111,而第1開閉閥111將第1供給管114關閉(步驟S110)。其結果,噴嘴8朝向基板W噴出第1噴出量X1之沖洗液。On the other hand, when the flow control unit 200 determines that the position of the nozzle 8 is not the central area including the center portion CT of the substrate W (No in step S108), the flow control unit 200 outputs the switch signal SNA indicating the closed state to the first 1 on-off valve 111, and the first on-off valve 111 closes the first supply pipe 114 (step S110). As a result, the nozzle 8 discharges the rinse liquid in the first discharge amount X1 toward the substrate W. As shown in FIG.

[實施形態2]  再次,參照圖4,針對本發明之實施形態2進行說明。惟,說明與實施形態1不同之事項,省略針對與實施形態1相同之事項之說明。實施形態2就將沖洗液之噴出量切換於0、第1噴出量、第2噴出量及第3噴出量之4種之點,與實施形態1不同。[Embodiment 2] Again, referring to FIG. 4, Embodiment 2 of the present invention will be described. However, matters different from those in Embodiment 1 will be described, and descriptions of matters that are the same as those in Embodiment 1 will be omitted. Embodiment 2 differs from Embodiment 1 in that the discharge amount of the rinse liquid is switched to four types: 0, the first discharge amount, the second discharge amount, and the third discharge amount.

於實施形態2中,為了於第2期間內執行「第2基板處理」,而於第3期間內執行「第2準備處理」。第3期間係較第2期間前面之期間。第3期間可與第1期間相同。In the second embodiment, in order to execute the "second substrate processing" in the second period, the "second preparatory processing" is executed in the third period. The third period is the period preceding the second period. The third period may be the same as the first period.

「第2準備處理」係預先調整第2供給管124中流通之沖洗液之流量之處理。於「第2準備處理」中,例如,將噴嘴8配置於特定位置。The "second preparation process" is a process of adjusting the flow rate of the rinse liquid flowing through the second supply pipe 124 in advance. In the "second preparation process", for example, the nozzle 8 is arranged at a specific position.

於「第2準備處理」中,控制部102將噴嘴8配置於基板W之外部PO。而且,流量控制部200藉由將表示關閉狀態之開閉信號SNA輸出至第1開閉閥111,而第1開閉閥111將第1供給管114關閉。另一方面,流量控制部200藉由將表示打開狀態之開閉信號SNB輸出至第2開閉閥121,而第2開閉閥121將第2供給管124打開。In the "second preparation process", the control unit 102 arranges the nozzle 8 on the outer PO of the substrate W. Furthermore, the flow control unit 200 outputs the opening and closing signal SNA indicating the closed state to the first on-off valve 111 , and the first on-off valve 111 closes the first supply pipe 114 . On the other hand, the flow control unit 200 outputs the opening and closing signal SNB indicating the open state to the second on-off valve 121 , and the second on-off valve 121 opens the second supply pipe 124 .

而且,流量控制部200藉由將包含第2開度量之開度信號AMB輸出至第2調整閥122,而第2調整閥122以第2開度量打開,且前述第2開度量用於以第2供給管124中流通之沖洗液之流量成為第2流量之方式將第2調整閥122打開。流量控制部200自第2流量計123接收第2流量信號FB。流量控制部200將第2流量信號FB所示之流量與第2流量進行比較,第2供給管124中流通之沖洗液之流量成為第2流量。其結果,噴嘴8朝向外部PO噴出第2流量之沖洗液。此時,第2調整閥122之開度為第2開度。換言之,第2開度表示用於在第2供給管124中流通第2流量之沖洗液之第2調整閥122之開度。流量控制部200將第2調整閥122之開度決定為第2開度。Furthermore, the flow control unit 200 outputs the opening signal AMB including the second opening amount to the second regulating valve 122, and the second regulating valve 122 is opened at the second opening amount, and the second opening amount is used to control the second opening amount by the second opening amount. 2. Open the second regulating valve 122 so that the flow rate of the flushing liquid flowing through the supply pipe 124 becomes the second flow rate. The flow rate control unit 200 receives the second flow rate signal FB from the second flow meter 123 . The flow rate control unit 200 compares the flow rate indicated by the second flow rate signal FB with the second flow rate, and the flow rate of the flushing liquid flowing through the second supply pipe 124 becomes the second flow rate. As a result, the nozzle 8 ejects the rinse liquid of the second flow rate toward the outside PO. At this time, the opening degree of the second regulating valve 122 is the second opening degree. In other words, the second opening degree represents the opening degree of the second regulating valve 122 for passing the flushing fluid of the second flow rate through the second supply pipe 124 . The flow control unit 200 determines the opening degree of the second regulating valve 122 as the second opening degree.

於第2期間內,流量控制於部200預先將表示第2開度之開度信號SMB輸出至第2調整閥122。又,流量控制部200藉由將開閉信號SNB輸出至第2開閉閥121,而第2開閉閥121將第2供給管124開閉。換言之,流量控制部200於第2期間內,在將第2調整閥122之開度設為第2開度之狀態下,將開閉信號輸出至第2開閉閥121。During the second period, the flow control unit 200 outputs an opening degree signal SMB indicating the second opening degree to the second regulating valve 122 in advance. Moreover, the flow rate control part 200 outputs the opening and closing signal SNB to the 2nd opening and closing valve 121, and the 2nd opening and closing valve 121 opens and closes the 2nd supply pipe 124. In other words, the flow rate control unit 200 outputs an opening and closing signal to the second on-off valve 121 in a state where the opening degree of the second regulating valve 122 is set to the second opening degree during the second period.

以上,針對本發明之實施形態2進行了說明。根據實施形態2,流量控制部200於第2期間(「第2基板處理」)內,在將第1調整閥112之開度設為第1開度、將第2調整閥122之開度設為第2開度之狀態下,將表示打開狀態之開閉信號輸出至第1開閉閥111與第2開閉閥121。其結果,可朝基板W更快速地供給0、第1噴出量、第2噴出量、及第3噴出量之4種噴出量之沖洗液。In the above, Embodiment 2 of the present invention has been described. According to Embodiment 2, the flow control unit 200 sets the opening degree of the first regulating valve 112 to the first opening degree and the opening degree of the second regulating valve 122 to the second period ("second substrate processing"). In the state of the second opening degree, an opening and closing signal indicating the open state is output to the first on-off valve 111 and the second on-off valve 121 . As a result, the rinse liquid can be supplied to the substrate W in four types of discharge amounts: 0, the first discharge amount, the second discharge amount, and the third discharge amount.

[實施形態3]  繼而,參照圖11,針對本發明之實施形態3進行說明。圖11係顯示實施形態3之沖洗液供給部4之示意圖。惟,說明與實施形態2不同之事項,省略針對與實施形態2相同之事項之說明。實施形態3就沖洗液供給部4進一步具備第3供給部130之點與實施形態2不同。[Embodiment 3] Next, Embodiment 3 of the present invention will be described with reference to FIG. 11 . Fig. 11 is a schematic diagram showing the rinse liquid supply unit 4 of the third embodiment. However, matters different from those in Embodiment 2 will be described, and descriptions of matters that are the same as those in Embodiment 2 will be omitted. The third embodiment differs from the second embodiment in that the rinse liquid supply unit 4 further includes a third supply unit 130 .

具體而言,第3供給部130包含:第3供給管134、第3流量計133、第3調整閥132、及第3開閉閥131。第3流量計133、第3調整閥132、及第3開閉閥131按照該順序自第3供給管134之下游朝向上游配置於第3供給管134。Specifically, the third supply unit 130 includes a third supply pipe 134 , a third flow meter 133 , a third adjustment valve 132 , and a third on-off valve 131 . The third flow meter 133 , the third regulating valve 132 , and the third on-off valve 131 are arranged in this order on the third supply pipe 134 from downstream to upstream of the third supply pipe 134 .

第3供給管134朝噴嘴8供給沖洗液。詳細而言,沖洗液經由第3供給管134自槽210供給至噴嘴8。第3供給管134係供沖洗液流通之管狀構件。The third supply pipe 134 supplies the rinse liquid to the nozzle 8 . Specifically, the rinse liquid is supplied from the tank 210 to the nozzle 8 through the third supply pipe 134 . The third supply pipe 134 is a tubular member through which the flushing liquid flows.

第3開閉閥131將第3供給管134開閉。即,第3開閉閥131切換來自第3供給管134之對噴嘴8之沖洗液之供給與供給停止。The third on-off valve 131 opens and closes the third supply pipe 134 . That is, the third on-off valve 131 switches between supply and stop of the rinse liquid from the third supply pipe 134 to the nozzle 8 .

第3調整閥132調整第3供給管134中流通之沖洗液之流量。第3調整閥132調節開度,調整第3供給管134中流通之沖洗液之流量。第3調整閥132例如為馬達針閥。具體而言,第3調整閥132包含:於內部設置有閥座之閥體(未圖示)、將閥座開閉之閥體、及使閥體於打開位置與關閉位置之間移動之致動器(未圖示)。The third adjusting valve 132 adjusts the flow rate of the flushing liquid flowing through the third supply pipe 134 . The opening of the third regulating valve 132 is adjusted to adjust the flow rate of the flushing liquid flowing through the third supply pipe 134 . The third regulating valve 132 is, for example, a motor needle valve. Specifically, the third regulating valve 132 includes: a valve body (not shown) with a valve seat inside, a valve body that opens and closes the valve seat, and an actuator that moves the valve body between an open position and a closed position. device (not shown).

第3流量計133計測第3供給管134中流通之沖洗液之流量。第3流量計133將表示流量之信號輸出至流量控制部200。表示流量之信號表示第3供給管134中流通之沖洗液之流量。以下,將表示流量之信號記載為「第3流量信號」。The third flowmeter 133 measures the flow rate of the flushing liquid flowing through the third supply pipe 134 . The third flowmeter 133 outputs a signal indicating the flow rate to the flow control unit 200 . The signal indicating the flow rate indicates the flow rate of the flushing liquid flowing through the third supply pipe 134 . Hereinafter, the signal indicating the flow rate will be referred to as "the third flow rate signal".

流量控制部200進一步控制第3開閉閥131、及第3調整閥132。The flow control unit 200 further controls the third on-off valve 131 and the third adjustment valve 132 .

以上,針對本發明之實施形態3進行了說明。根據實施形態3,可朝基板W更快速地供給0、第1噴出量、第2噴出量、第3噴出量、第4噴出量、第5噴出量、及第6噴出量之7種噴出量之沖洗液。0、第1噴出量、第2噴出量、第3噴出量、第4噴出量、第5噴出量、及第6噴出量互不相同。其結果,關於噴出量,可執行詳細之控制。In the above, Embodiment 3 of the present invention has been described. According to Embodiment 3, seven kinds of discharge amounts of 0, the first discharge amount, the second discharge amount, the third discharge amount, the fourth discharge amount, the fifth discharge amount, and the sixth discharge amount can be supplied to the substrate W more quickly. of rinse solution. 0. The first discharge amount, the second discharge amount, the third discharge amount, the fourth discharge amount, the fifth discharge amount, and the sixth discharge amount are different from each other. As a result, detailed control can be performed regarding the discharge amount.

以上,參照圖式(圖1~圖11),針對本發明之實施形態進行了說明。惟,本發明並非係限定於上述之實施形態者,可於不脫離該要旨之範圍內於各種態樣中實施。又,上述之實施形態所揭示之複數個構成要素可適宜改變。例如,可將某一實施形態所示之所有構成要素中之某一構成要素追加至另一實施形態之構成要素,或可自實施形態削除某一實施形態所示之所有構成要素中之若干個構成要素。The embodiments of the present invention have been described above with reference to the drawings (FIGS. 1 to 11). However, this invention is not limited to the above-mentioned embodiment, It can implement in various forms in the range which does not deviate from the said summary. In addition, the plurality of components disclosed in the above-mentioned embodiments can be appropriately changed. For example, one of all the constituent elements shown in a certain embodiment may be added to the constituent elements of another embodiment, or some of all the constituent elements shown in a certain embodiment may be deleted from the embodiment. constituent elements.

圖式為了使發明易於理解,而於主體上示意性顯示各個構成要素,所圖示之各構成要素之厚度、長度、個數、間隔等有於方便製作圖式上與實際不同之情形。又,上述之實施形態所示之各構成要素之構成係一例,無特別限定,當然可於不實質上脫離本發明之效果之範圍內進行各種變更。In order to make the invention easy to understand, the drawings schematically show each constituent element on the main body, and the thickness, length, number, interval, etc. of each constituent element shown in the illustration may be different from the actual situation for the convenience of making the drawing. Moreover, the structure of each component shown in the above-mentioned embodiment is an example, and is not specifically limited, It goes without saying that various changes can be made in the range which does not substantially deviate from the effect of this invention.

(1)例如,參照圖3所說明之噴嘴8沿以第2旋轉軸線AX2為中心之周向繞第1旋轉軸93以一定速度移動,但無特別限定。可行的是,噴嘴移動機構9(驅動部95)可變更噴嘴8之移動速度。例如,於流量控制部200將第1供給管114開閉時,噴嘴移動機構9(驅動部95)可減慢噴嘴8之移動速度。其結果,可更高精度地朝基板W中之所期望之位置噴出沖洗液。(1) For example, the nozzle 8 described with reference to FIG. 3 moves at a constant speed around the first rotation axis 93 in the circumferential direction centered on the second rotation axis AX2, but it is not particularly limited. It is possible that the nozzle moving mechanism 9 (drive unit 95 ) can change the moving speed of the nozzle 8 . For example, when the flow control unit 200 opens and closes the first supply pipe 114 , the nozzle moving mechanism 9 (drive unit 95 ) can slow down the moving speed of the nozzle 8 . As a result, the rinse liquid can be ejected toward a desired position on the substrate W with higher precision.

(2)例如,流量控制部200基於來自編碼器94之驅動部旋轉量信號,檢測到噴嘴8之位置,但可基於驅動部95之驅動時間而檢測噴嘴8之位置。(2) For example, the flow control unit 200 detects the position of the nozzle 8 based on the driving unit rotation amount signal from the encoder 94 , but can detect the position of the nozzle 8 based on the driving time of the driving unit 95 .

(3)例如,參照圖2所說明之旋轉卡盤3係使複數個卡盤構件32與基板W之周端面接觸之夾持式卡盤,但保持基板W之方式只要可水平地基板W,則無特別限定。例如,旋轉卡盤3可為真空式卡盤,亦可為伯努利式卡盤。  [產業上之可利用性](3) For example, the spin chuck 3 described with reference to FIG. 2 is a clamping chuck in which a plurality of chuck members 32 are brought into contact with the peripheral end surface of the substrate W. However, as long as the method of holding the substrate W can hold the substrate W horizontally, There is no particular limitation. For example, the spin chuck 3 can be a vacuum chuck or a Bernoulli chuck. [Industrial availability]

本發明於處理基板之領域中是有用的。The invention is useful in the field of processing substrates.

1:處理單元 2:腔室 3:旋轉卡盤 4:沖洗液供給部 5:旋轉馬達部 8:噴嘴 9:噴嘴移動機構 10:導引件 32:卡盤構件 33:第3調整閥 51:馬達本體 53:軸 55:編碼器 91:噴嘴臂 93:第1旋轉軸 94:編碼器 95:驅動部 100:基板處理裝置 100A:流體殼體 100B:流體箱 101:控制裝置 102:控制部 103:記憶部 110:第1供給部 111:第1開閉閥(第1開閉部) 112:第1調整閥(第1流量調整部) 113:第1流量計 114:第1供給管 120:第2供給部 121:第2開閉閥(第2開閉部) 122:第2調整閥(第2流量調整部) 123:第2流量計 124:第2供給管 130:第3供給部 131:第3開閉閥 132:第3調整閥 133:第3流量計 134:第3供給管 200:流量控制部 210:槽 AX1:第1旋轉軸線 AX2:第2旋轉軸線 CD:基板之周向 CR:中心機器人 CT:基板=之中心部 EG:邊緣部 FA:第1流量信號 FB:第2流量信號 IR:分度器機器人 LP:加載台 MP: P:處理位置 PO:基板之外部 SMA,SMB:開度信號 SNA,SNB:開閉信號 T1~T3:時間 TJ1:軌跡 TW:塔 W:基板 X1:第1噴出量 X2:第2噴出量 ΔT:短期間1: Processing unit 2: Chamber 3: Rotary chuck 4: Rinse liquid supply unit 5: Rotary motor unit 8: Nozzle 9: Nozzle moving mechanism 10: Guide 32: Chuck member 33: Third adjustment valve 51: Motor body 53: Shaft 55: Encoder 91: Nozzle arm 93: First rotating shaft 94: Encoder 95: Drive unit 100: Substrate processing apparatus 100A: Fluid case 100B: Fluid tank 101: Control unit 102: Control unit 103 : memory unit 110: first supply unit 111: first on-off valve (first on-off unit) 112: first adjustment valve (first flow rate adjustment unit) 113: first flow meter 114: first supply pipe 120: second Supply part 121: Second on-off valve (Second on-off part) 122: Second regulating valve (Second flow rate adjustment part) 123: Second flow meter 124: Second supply pipe 130: Third supply part 131: Third on-off Valve 132: 3rd adjustment valve 133: 3rd flowmeter 134: 3rd supply pipe 200: Flow rate control unit 210: Groove AX1: 1st rotation axis AX2: 2nd rotation axis CD: Circumferential direction of substrate CR: Center robot CT : Central part of substrate = EG: Edge part FA: First flow signal FB: Second flow signal IR: Indexer robot LP: Loading table MP: P: Processing position PO: External SMA of the substrate, SMB: Opening signal SNA, SNB: open Close signal T1~T3: Time TJ1: Trajectory TW: Tower W: Substrate X1: 1st discharge amount X2: 2nd discharge amount ΔT: Short period

圖1係本發明之實施形態1之基板處理裝置之示意圖。  圖2係實施形態1之基板處理裝置具備之處理單元之示意圖。  圖3(a)係顯示噴嘴移動處理之俯視圖。(b)係顯示基板旋轉處理之俯視圖。  圖4係顯示實施形態1之沖洗液供給部之示意圖。  圖5係顯示實施形態1之沖洗液供給部之示意圖。  圖6係顯示實施形態1之沖洗液供給部之示意圖。  圖7係顯示實施形態1之沖洗液供給部之示意圖。  圖8係顯示沖洗液自噴嘴之噴出量與時間之關係之一例之圖。  圖9係顯示由實施形態1之基板處理裝置具備之控制部與流量控制部進行之處理之流程圖。  圖10係顯示由實施形態1之基板處理裝置具備之控制部與流量控制部進行之處理之流程圖。  圖11係顯示本發明之實施形態3之沖洗液供給部之示意圖。FIG. 1 is a schematic diagram of a substrate processing apparatus according to Embodiment 1 of the present invention. FIG. 2 is a schematic diagram of a processing unit included in the substrate processing device of Embodiment 1. Figure 3(a) is a top view showing the nozzle movement process. (b) is a top view showing substrate rotation processing. Fig. 4 is a schematic diagram showing the flushing liquid supply part of Embodiment 1. Fig. 5 is a schematic diagram showing the flushing liquid supply part of Embodiment 1. Fig. 6 is a schematic diagram showing the flushing liquid supply part of Embodiment 1. Fig. 7 is a schematic diagram showing the flushing liquid supply part of Embodiment 1. Fig. 8 is a graph showing an example of the relationship between the amount of flushing liquid ejected from the nozzle and time. FIG. 9 is a flow chart showing the processing performed by the control unit and the flow control unit included in the substrate processing apparatus according to the first embodiment. FIG. 10 is a flow chart showing processing performed by the control unit and the flow control unit included in the substrate processing apparatus according to the first embodiment. Fig. 11 is a schematic diagram showing the flushing liquid supply part of Embodiment 3 of the present invention.

8:噴嘴 8: Nozzle

91:噴嘴臂 91: nozzle arm

94:編碼器 94: Encoder

95:驅動部 95: drive unit

100A:流體殼體 100A: Fluid housing

100B:流體箱 100B: Fluid tank

101:控制裝置 101: Control device

110:第1供給部 110: The first supply department

111:第1開閉閥(第1開閉部) 111: The first opening and closing valve (the first opening and closing part)

112:第1調整閥(第1流量調整部) 112: 1st adjustment valve (1st flow adjustment part)

113:第1流量計 113: 1st flow meter

114:第1供給管 114: No. 1 supply pipe

120:第2供給部 120: The 2nd supply department

121:第2開閉閥(第2開閉部) 121: The second opening and closing valve (the second opening and closing part)

122:第2調整閥(第2流量調整部) 122: The second adjustment valve (the second flow adjustment part)

123:第2流量計 123: The second flow meter

124:第2供給管 124: The second supply pipe

200:流量控制部 200: flow control department

210:槽 210: slot

FA:第1流量信號 FA: 1st flow signal

FB:第2流量信號 FB: 2nd flow signal

SMA,SMB:開度信號 SMA, SMB: opening signal

SNA,SNB:開閉信號 SNA, SNB: open and close signal

Claims (11)

一種基板處理裝置,其包含:  基板保持部,其保持基板;  噴嘴,其向前述基板噴出處理液;  第1供給管,其將前述處理液供給至前述噴嘴;  第1開閉部,其將前述第1供給管開閉;  第1流量調整部,其調整前述第1供給管中流通之前述處理液之流量;  第2供給管,其將供給前述處理液供給至前述噴嘴;及  流量控制部,其控制前述第1開閉部及前述第1流量調整部;且  前述流量控制部,  於第1期間內,在將前述第1供給管打開之狀態下,對前述第1流量調整部之開度進行回饋控制,將前述第1流量調整部之開度定為第1開度,  於第2期間內,在將前述第1流量調整部之開度設為前述第1開度之狀態下,不對前述第1流量調整部之開度進行回饋控制,將前述第1供給管開閉,  前述第1期間,係較前述第2期間前面之期間。A substrate processing device, comprising: a substrate holding part that holds a substrate; a nozzle that sprays a processing liquid onto the substrate; a first supply pipe that supplies the processing liquid to the nozzle; a first opening and closing part that feeds the first 1 opening and closing of the supply pipe; a first flow adjustment part, which adjusts the flow rate of the aforementioned processing liquid circulating in the aforementioned first supply pipe; a second supply pipe, which supplies the aforementioned processing liquid to the aforementioned nozzle; and a flow control part, which controls The aforementioned first opening and closing portion and the aforementioned first flow rate adjusting portion; and The aforementioned flow rate control portion performs feedback control on the opening degree of the aforementioned first flow rate adjusting portion while opening the aforementioned first supply pipe during the first period , set the opening degree of the first flow adjustment part as the first opening degree, during the second period, in the state where the opening degree of the first flow adjustment part is set as the first opening degree The opening of the flow adjustment part is feedback-controlled to open and close the aforementioned first supply pipe, and the aforementioned first period is a period earlier than the aforementioned second period. 如請求項1之基板處理裝置,其進一步包含流量計,該流量計計測前述第1供給管中流通之前述處理液之流量;且  前述流量控制部朝前述第1開閉部輸出開閉信號,且朝前述第1流量調整部輸出開度信號;  前述開閉信號表示前述第1供給管之打開狀態及關閉狀態內之任一狀態;  前述開度信號表示前述第1流量調整部之開度;  前述回饋控制包含基於前述流量計之檢測結果之比例控制、積分控制、及微分控制。The substrate processing device according to claim 1, further comprising a flow meter, the flow meter measures the flow rate of the aforementioned processing liquid circulating in the aforementioned first supply pipe; The aforementioned first flow adjustment part outputs an opening signal; The aforementioned opening and closing signal indicates either the open state or the closed state of the aforementioned first supply pipe; The aforementioned opening signal indicates the opening degree of the aforementioned first flow adjustment part; The aforementioned feedback control It includes proportional control, integral control, and differential control based on the detection results of the aforementioned flowmeter. 如請求項1或2之基板處理裝置,其中於前述第2期間,前述噴嘴係  向前述基板之周緣部,噴出第1噴出量之前述處理液;  向前述基板之中央部,噴出較前述第1噴出量為多之第2噴出量之前述處理液,前述第1噴出量之前述處理液,係自前述第2供給管供給之前述處理液;  前述第2噴出量之前述處理液,係自前述第1供給管供給之前述處理液、與自前述第2供給管供給之前述處理液。The substrate processing device according to claim 1 or 2, wherein during the second period, the nozzle sprays the first discharge amount of the treatment liquid toward the peripheral portion of the substrate; The above-mentioned processing liquid of the second discharge amount with the largest discharge amount, the above-mentioned processing liquid of the first discharge amount is the above-mentioned processing liquid supplied from the second supply pipe; the above-mentioned processing liquid of the second discharge amount is from the above-mentioned The processing liquid supplied from the first supply pipe, and the processing liquid supplied from the second supply pipe. 如請求項3之基板處理裝置,其進一步包含基板旋轉部,該基板旋轉部係以沿鉛直方向延伸之旋轉軸線為中心而使前述基板旋轉;且  於前述第2期間內,使前述基板相對於前述噴嘴旋轉。The substrate processing apparatus according to claim 3, further comprising a substrate rotating unit that rotates the substrate centering on a rotation axis extending in the vertical direction; and during the second period, rotates the substrate relative to The aforementioned nozzles rotate. 如請求項3之基板處理裝置,其進一步包含驅動部,前述驅動部於前述第2期間內,使前述噴嘴相對於前述基板移動。The substrate processing apparatus according to claim 3, further comprising a drive unit configured to move the nozzle relative to the substrate during the second period. 如請求項5之基板處理裝置,其進一步包含檢測前述驅動部之驅動狀態之檢測部;且  於前述第2期間內,前述流量控制部基於前述檢測部之檢測結果,將前述第1供給管開閉。The substrate processing apparatus according to claim 5, further comprising a detection unit that detects the driving state of the driving unit; and During the second period, the flow control unit opens and closes the first supply pipe based on the detection result of the detection unit . 如請求項6之基板處理裝置,其中前述驅動部可變更前述噴嘴之移動速度;且  前述流量控制部將前述第1供給管開閉時,減慢前述噴嘴之移動速度。The substrate processing apparatus according to claim 6, wherein the driving unit can change the moving speed of the nozzle; and the flow control unit slows down the moving speed of the nozzle when opening and closing the first supply pipe. 如請求項1或2之基板處理裝置,其進一步包含:  第2開閉部,其將前述第2供給管開閉;及  第2流量調整部,其調整前述第2供給管中流通之前述處理液之流量;且  前述流量控制部,  於第3期間內,在將前述第2供給管打開之狀態下,對前述第2流量調整部之開度進行回饋控制,將前述第2流量調整部之開度定為第2開度,  於前述第2期間內,在將前述第2流量調整部之開度設為前述第2開度之狀態下,不對前述第2流量調整部之開度進行回饋控制,將前述第2供給管開閉,  前述第3期間,係較前述第2期間前面之期間。The substrate processing device according to claim 1 or 2, which further includes: a second opening and closing part, which opens and closes the aforementioned second supply pipe; flow rate; and the above-mentioned flow control part, during the third period, in the state of opening the above-mentioned second supply pipe, performs feedback control on the opening of the above-mentioned second flow adjustment part, and the opening of the above-mentioned second flow adjustment part Set as the second opening, during the second period, in the state where the opening of the second flow adjustment part is set to the second opening, feedback control is not performed on the opening of the second flow adjustment part, The aforementioned 2nd supply pipe is opened and closed, and the aforementioned 3rd period is a period before the aforementioned 2nd period. 一種基板處理方法,其包含下述步序:  保持基板;  自噴嘴向前述基板噴出處理液;  自第1供給管將前述處理液供給至前述噴嘴;  利用第1流量調整部調整前述第1供給管中流通之前述處理液之流量;  自第2供給管將前述處理液供給至前述噴嘴;  於將前述第1供給管打開之狀態下,對前述第1流量調整部之開度進行回饋控制,將前述第1流量調整部之開度定為第1開度;及  於將前述第1流量調整部之開度設為前述第1開度之狀態下,不對前述第1流量調整部之開度進行回饋控制,將前述第1供給管開閉。A substrate processing method comprising the following steps: holding a substrate; spraying a processing liquid from a nozzle to the substrate; supplying the processing liquid to the nozzle from a first supply pipe; adjusting the first supply pipe by a first flow rate adjustment unit The flow rate of the aforementioned processing liquid circulating in the center; The aforementioned processing liquid is supplied to the aforementioned nozzle from the second supply pipe; In the state where the aforementioned first supply pipe is opened, feedback control is performed on the opening degree of the aforementioned first flow rate adjustment part, and the The opening degree of the first flow adjustment part is set as the first opening degree; and In the state where the opening degree of the first flow adjustment part is set as the first opening degree, the opening degree of the first flow adjustment part is not adjusted The feedback control is to open and close the aforementioned first supply pipe. 如請求項9之基板處理方法,其進一步包含以沿鉛直方向延伸之旋轉軸線為中心而使前述基板旋轉的步序。The substrate processing method according to claim 9, further comprising a step of rotating the substrate around a rotation axis extending in the vertical direction. 如請求項9或10之基板處理方法,其進一步包含使前述噴嘴相對於前述基板移動的步序。The substrate processing method according to claim 9 or 10, further comprising the step of moving the nozzle relative to the substrate.
TW110143707A 2021-03-04 2021-11-24 Substrate processing apparatus and substrate processing method TWI807500B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021-034582 2021-03-04
JP2021034582A JP2022135022A (en) 2021-03-04 2021-03-04 Substrate processing apparatus and substrate processing method

Publications (2)

Publication Number Publication Date
TW202300226A true TW202300226A (en) 2023-01-01
TWI807500B TWI807500B (en) 2023-07-01

Family

ID=83064493

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110143707A TWI807500B (en) 2021-03-04 2021-11-24 Substrate processing apparatus and substrate processing method

Country Status (4)

Country Link
JP (1) JP2022135022A (en)
KR (1) KR102657209B1 (en)
CN (1) CN115020272A (en)
TW (1) TWI807500B (en)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6091193B2 (en) * 2011-12-27 2017-03-08 芝浦メカトロニクス株式会社 Substrate processing apparatus and processing method
JP6625385B2 (en) * 2015-09-28 2019-12-25 株式会社Screenホールディングス Substrate processing apparatus and substrate processing method
JP6669560B2 (en) * 2016-03-30 2020-03-18 株式会社Screenホールディングス Substrate processing equipment
JP6861553B2 (en) * 2017-03-24 2021-04-21 株式会社Screenホールディングス Board processing equipment
CN211993637U (en) * 2020-04-17 2020-11-24 京隆科技(苏州)有限公司 Wafer cutting system capable of adjusting two fluids

Also Published As

Publication number Publication date
CN115020272A (en) 2022-09-06
TWI807500B (en) 2023-07-01
KR20220125152A (en) 2022-09-14
KR102657209B1 (en) 2024-04-12
JP2022135022A (en) 2022-09-15

Similar Documents

Publication Publication Date Title
US20230256479A1 (en) Substrate processing method and substrate processing device
CN109545704B (en) Chemical liquid generating method, chemical liquid generating apparatus, and substrate processing apparatus
US20080035610A1 (en) Substrate processing apparatus and substrate processing method
TW201438089A (en) Substrate processing method and substrate processing apparatus
KR102182116B1 (en) Substrate processing method and substrate processing apparatus
CN111819668A (en) Substrate processing method and substrate processing apparatus
JP2010123709A (en) Substrate processing apparatus
TWI807500B (en) Substrate processing apparatus and substrate processing method
JP2011135014A (en) Substrate processing apparatus
TWI809652B (en) Substrate processing method and substrate processing apparatus
JP2017183568A (en) Wafer processing apparatus and wafer processing method
CN114664694A (en) Substrate processing method and substrate processing apparatus
JP7176936B2 (en) Substrate processing method and substrate processing apparatus
TW202117961A (en) Semiconductor process system
TW202036703A (en) Substrate processing apparatus, substrate processing method, and semiconductor manufacturing method
JP7409956B2 (en) Substrate processing equipment and substrate processing method
JP2005166792A (en) Substrate processing equipment
WO2023182218A1 (en) Substrate treatment device and substrate treatment method
JP2024017777A (en) Suckback method and substrate processing equipment
JP2022155739A (en) Substrate processing apparatus and substrate processing method
US11819872B2 (en) Substrate processing apparatus and method of machining tubular guard
WO2023048064A1 (en) Substrate processing apparatus and substrate processing method
JP2007266554A (en) Device and method for substrate processing
KR20230044940A (en) Substrate processing apparatus
JP2022176662A (en) Substrate processing method and substrate processing apparatus