TW202249307A - Sheet for optical semiconductor device encapsulation and method for manufacturing optical semiconductor device - Google Patents

Sheet for optical semiconductor device encapsulation and method for manufacturing optical semiconductor device Download PDF

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TW202249307A
TW202249307A TW111106735A TW111106735A TW202249307A TW 202249307 A TW202249307 A TW 202249307A TW 111106735 A TW111106735 A TW 111106735A TW 111106735 A TW111106735 A TW 111106735A TW 202249307 A TW202249307 A TW 202249307A
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optical semiconductor
sealing
semiconductor element
radiation
sheet
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TW111106735A
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田中俊平
浅井量子
飛永駿
植野大樹
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日商日東電工股份有限公司
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    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00Adhesives in the form of films or foils
    • C09J7/20Adhesives in the form of films or foils characterised by their carriers
    • C09J7/29Laminated material
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336Illuminating devices
    • G02F1/133602Direct backlight
    • G02F1/133603Direct backlight with LEDs
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/16Layered products comprising a layer of synthetic resin specially treated, e.g. irradiated
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    • C09J133/00Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C09J133/04Homopolymers or copolymers of esters
    • C09J133/14Homopolymers or copolymers of esters of esters containing halogen, nitrogen, sulfur or oxygen atoms in addition to the carboxy oxygen
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    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J4/00Adhesives based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; adhesives, based on monomers of macromolecular compounds of groups C09J183/00 - C09J183/16
    • C09J4/06Organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond in combination with a macromolecular compound other than an unsaturated polymer of groups C09J159/00 - C09J187/00
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00Adhesives in the form of films or foils
    • C09J7/30Adhesives in the form of films or foils characterised by the adhesive composition
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005Processes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/84Passivation; Containers; Encapsulations
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    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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    • C09J2301/00Additional features of adhesives in the form of films or foils
    • C09J2301/10Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet
    • C09J2301/12Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the arrangement of layers
    • C09J2301/122Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the arrangement of layers the adhesive layer being present only on one side of the carrier, e.g. single-sided adhesive tape
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    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00Additional features of adhesives in the form of films or foils
    • C09J2301/20Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive itself
    • C09J2301/208Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive itself the adhesive layer being constituted by at least two or more adjacent or superposed adhesive layers, e.g. multilayer adhesive
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    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2401/00Presence of cellulose
    • C09J2401/006Presence of cellulose in the substrate
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2467/00Presence of polyester
    • C09J2467/006Presence of polyester in the substrate

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nonlinear Science (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optics & Photonics (AREA)
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  • Computer Hardware Design (AREA)
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  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Light Receiving Elements (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Led Device Packages (AREA)
  • Liquid Crystal (AREA)
  • Laminated Bodies (AREA)

Abstract

The invention provides a sheet for sealing an optical semiconductor element, which has excellent sealing performance of the optical semiconductor element and is not easy to be damaged when adjacent optical semiconductor devices are separated from each other and not easy to be adhered to the adjacent optical semiconductor devices. A sheet (1) for sealing an optical semiconductor element is a sheet for sealing one or more optical semiconductor elements (6) disposed on a substrate (5). A sheet (1) for sealing an optical semiconductor element is provided with a base part (2) and a sealing part (3) provided on one surface of the base part (2). And a sealing part (3) for sealing the optical semiconductor element (6), the sealing part (3) having a radiation non-curable adhesive layer (32) and a radiation-curable resin layer (31) laminated on the radiation non-curable adhesive layer (32). The radiation-non-curable adhesive layer (32) is located on the surface on the optical semiconductor element (6) side when sealing the optical semiconductor element (6).

Description

光半導體元件密封用片材及光半導體裝置之製造方法Sheet for sealing optical semiconductor element and manufacturing method of optical semiconductor device

本發明係關於一種光半導體元件密封用片材。更具體而言,本發明係關於一種用於對配置於基板上之1個以上之光半導體元件進行密封之片材。又,本發明係關於一種光半導體裝置之製造方法。The present invention relates to a sheet for sealing an optical semiconductor element. More specifically, the present invention relates to a sheet for sealing one or more optical semiconductor elements arranged on a substrate. Also, the present invention relates to a method of manufacturing an optical semiconductor device.

例如,已知液晶顯示裝置中所使用之背光裝置具有如下構造,該構造係在基板上配置有複數個LED(Light-Emitting Diode,發光二極體),且藉由密封樹脂將上述複數個LED密封。作為使用上述密封樹脂將上述複數個LED一起密封之方法,已知有如下方法,即,使液狀樹脂流入至配置有複數個LED之區域,掩埋上述複數個LED,其後藉由熱或紫外線照射使液狀樹脂硬化(例如,參照專利文獻1)。 [先前技術文獻] [專利文獻] For example, it is known that a backlight device used in a liquid crystal display device has a structure in which a plurality of LEDs (Light-Emitting Diodes) are disposed on a substrate, and the plurality of LEDs are encapsulated by a sealing resin. seal. As a method of sealing the plurality of LEDs together using the sealing resin, there is known a method in which a liquid resin is poured into a region where the plurality of LEDs are arranged to bury the plurality of LEDs, and thereafter, the plurality of LEDs are sealed by heat or ultraviolet rays. Irradiation hardens the liquid resin (for example, refer to Patent Document 1). [Prior Art Literature] [Patent Document]

[專利文獻1]日本專利特開2017-66390號公報[Patent Document 1] Japanese Patent Laid-Open No. 2017-66390

[發明所欲解決之問題][Problem to be solved by the invention]

然而,使用液狀樹脂密封LED等光半導體元件之方法存在塗佈液狀樹脂時會引起滴液、液狀樹脂附著於非期望之區域等操作性較差之問題。However, the method of sealing optical semiconductor elements such as LEDs with a liquid resin has a problem of poor workability, such as dripping and adhesion of the liquid resin to undesired areas when the liquid resin is applied.

針對於此,業者認為,藉由不使用液狀樹脂,而採用具備用於密封光半導體元件之密封層之密封用片材之形式,可容易且以簡易之步驟並於短時間內密封光半導體元件。此處,重要的是,上述密封用片材對光半導體元件之密封性優異,且對光半導體元件或具備光半導體元件之基板之密接性優異以實現充分密封光半導體元件。In view of this, the industry thinks that by adopting the form of a sealing sheet having a sealing layer for sealing an optical semiconductor element without using a liquid resin, it is possible to seal the optical semiconductor easily and in a short time in simple steps element. Here, it is important that the said sheet|seat for sealing is excellent in sealing property to an optical-semiconductor element, and it is excellent in adhesiveness to an optical-semiconductor element or the board|substrate provided with an optical-semiconductor element, and to fully seal an optical-semiconductor element.

順便提及,隨著4K、8K等高畫質化,對更大畫面之圖像顯示裝置之需求正在增加。又,室外、公共設施等之廣告顯示或指示板等標牌中,大畫面圖像顯示裝置之利用亦不斷增加。然而,若製造大畫面之圖像顯示裝置,則會存在良率降低、製造成本上升之問題。為了以更低成本製造大畫面圖像顯示裝置,業者正在將複數個圖像顯示裝置等光半導體裝置排列成磚塊狀之拼貼型顯示器。當將複數個光半導體裝置排列成磚塊狀即拼貼時,於鄰接配置之光半導體裝置彼此發生位置偏移等之情形或需要重新排列之情形時,會進行位置修正。By the way, with the improvement of image quality such as 4K and 8K, the demand for image display devices with larger screens is increasing. In addition, the use of large-screen image display devices is also increasing in outdoor and public facility advertising displays or signs such as signage boards. However, if an image display device with a large screen is manufactured, there will be a problem of lower yield rate and higher manufacturing cost. In order to manufacture large-screen image display devices at a lower cost, the industry is arranging a plurality of optical semiconductor devices such as image display devices into a brick-shaped collage-type display. When a plurality of photo-semiconductor devices are arranged in a brick shape, that is, a collage, position correction is performed when adjacently arranged photo-semiconductor devices are displaced from each other or need to be rearranged.

此處,於在光半導體元件被密封用片材密封之狀態下拼貼光半導體裝置之情形時,為了進行位置修正,需要在拼貼時暫時拉開鄰接之光半導體裝置。然而,當拉開時,有時會產生如下等不良情況:一個光半導體裝置中之密封用片材與鄰接之另一個光半導體裝置中之密封用片材密接並相互吸引,導致一個光半導體裝置中之密封用片材產生缺損,一個密封用片材之一部分轉印並附著於另一個光半導體裝置。對光半導體元件或基板密接性優異之密封用片材特別容易產生此種不良情況。Here, when bonding the optical semiconductor devices in a state where the optical semiconductor elements are sealed by the sealing sheet, in order to perform position correction, it is necessary to temporarily pull apart the adjacent optical semiconductor devices at the time of bonding. However, when pulled apart, there are sometimes disadvantages such as that the sealing sheet in one optical semiconductor device is in close contact with the sealing sheet in another adjacent optical semiconductor device and is attracted to each other, resulting in a single optical semiconductor device. One of the sealing sheets was chipped, and a part of one sealing sheet was transferred and adhered to the other optical semiconductor device. Such a problem is particularly likely to occur in a sealing sheet having excellent adhesion to an optical semiconductor element or a substrate.

本發明係基於此種情況而構思者,其目的在於提供一種光半導體元件密封用片材,其對光半導體元件之密封性優異,並且,當將鄰接之光半導體裝置彼此拉開時,不易引起片材缺損或鄰接之光半導體裝置之片材附著。 [解決問題之技術手段] The present invention was conceived based on the above circumstances, and its object is to provide a sheet for sealing optical semiconductor elements, which has excellent sealing properties for optical semiconductor elements and is less likely to cause damage when adjacent optical semiconductor devices are pulled apart from each other. The sheet is missing or the sheet of the adjacent photo-semiconductor device is attached. [Technical means to solve the problem]

本發明者等人為了達成上述目的進行銳意研究,結果發現,藉由具備具有放射線非硬化性黏著劑層及放射線硬化性樹脂層之密封部且放射線非硬化性黏著劑層位於密封部之光半導體元件側之表面之光半導體元件密封用片材,而使光半導體元件之密封性優異,並且,當將鄰接之光半導體裝置彼此拉開時,不易引起片材缺損或鄰接之光半導體裝置之片材附著。本發明係基於該等見解而完成者。The inventors of the present invention conducted earnest research to achieve the above object, and as a result, found that an optical semiconductor having a sealing portion having a radiation non-curable adhesive layer and a radiation-curable resin layer in which the radiation non-curable adhesive layer is located in the sealing portion The optical semiconductor element sealing sheet on the surface of the element side makes the sealing performance of the optical semiconductor element excellent, and when the adjacent optical semiconductor devices are pulled apart, it is difficult to cause the sheet to be damaged or the adjacent optical semiconductor device to be damaged material attached. This invention was completed based on these knowledge.

即,本發明提供一種光半導體元件密封用片材,其係用於對配置於基板上之1個以上之光半導體元件進行密封之片材, 上述光半導體元件密封用片材具備基材部、及設置於上述基材部之一個面且用於密封上述光半導體元件之密封部;且 上述密封部具有在密封光半導體元件時位於光半導體元件側之表面之放射線非硬化性黏著劑層、及積層於上述放射線非硬化性黏著劑層之放射線硬化性樹脂層。 That is, the present invention provides a sheet for sealing an optical semiconductor element, which is a sheet for sealing one or more optical semiconductor elements arranged on a substrate, The sheet for encapsulating an optical semiconductor element includes a base portion, and a sealing portion provided on one surface of the base portion and sealing the optical semiconductor element; and The sealing portion has a radiation non-curable adhesive layer positioned on the surface of the optical semiconductor element side when sealing the optical semiconductor element, and a radiation curable resin layer laminated on the radiation non-curable adhesive layer.

如上所述,上述光半導體元件密封用片材具備使放射線非硬化性黏著劑層與放射線硬化性樹脂層積層而成之密封部。上述密封部係在上述光半導體元件密封用片材中密封光半導體元件之區域。並且,當密封光半導體元件時,放射線非硬化性黏著劑層位於成為光半導體元件側之密封部表面。藉由上述放射線非硬化性黏著劑層位於上述表面,當上述光半導體元件密封用片材密封光半導體元件時,上述放射線非硬化性黏著劑層對光半導體元件及基板之密接性優異,光半導體元件之密封性優異。並且,密封後藉由放射線照射使上述放射線硬化性樹脂層硬化,使密封用片材側面之密接性降低。藉此,於拼貼狀態下,鄰接之光半導體裝置中之密封部彼此之密接性較低,並且,當將鄰接之光半導體裝置彼此拉開時,不易引起片材缺損或鄰接之光半導體裝置之片材附著。又,上述基材部成為上述密封部之支持體,藉由具備上述基材部,而使上述光半導體元件密封用片材之操作性優異。又,藉由光半導體元件密封用片材密封光半導體元件來製作光半導體裝置,其後進行切割,此時可進一步抑制切割部分之黏膩感,可製作外觀良好之光半導體裝置。As mentioned above, the said sheet|seat for optical-semiconductor element sealing is equipped with the sealing part which laminated|stacked the radiation non-curable adhesive agent layer and a radiation curable resin. The said sealing part is a region which seals an optical-semiconductor element in the said sheet|seat for optical-semiconductor element sealing. And when sealing an optical semiconductor element, a radiation non-hardening adhesive layer is located in the surface of the sealing part which becomes an optical semiconductor element side. When the above-mentioned radiation non-curable adhesive layer is located on the above-mentioned surface, when the above-mentioned optical-semiconductor element sealing sheet seals an optical-semiconductor element, the above-mentioned radiation-non-curable adhesive layer has excellent adhesion to the optical-semiconductor element and the substrate, and the optical semiconductor The sealing performance of components is excellent. Furthermore, after sealing, the said radiation curable resin layer is cured by irradiation with radiation, and the adhesiveness of the side surface of the sheet|seat for sealing is reduced. Thereby, in the collage state, the sealing parts of the adjacent optical semiconductor devices have low adhesion to each other, and when the adjacent optical semiconductor devices are pulled apart, it is difficult to cause sheet defects or damage the adjacent optical semiconductor devices. The sheet is attached. Moreover, the said base material part becomes the support body of the said sealing part, and the handling property of the said sheet|seat for optical-semiconductor element sealing is excellent by providing the said base material part. In addition, when an optical semiconductor device is manufactured by sealing the optical semiconductor device with a sheet for sealing the optical semiconductor device, and then dicing, the stickiness of the cut part can be further suppressed, and an optical semiconductor device with a good appearance can be produced.

上述放射線硬化性樹脂層較佳為比上述放射線非硬化性黏著劑層更厚。藉由具有此種構成,相較於拼貼狀態下鄰接之光半導體裝置中之放射線非硬化性黏著劑層彼此之高密接性,鄰接之光半導體裝置中之放射線硬化性樹脂層在硬化後之低密接性成為主導,因此密封部彼此之密接性更低,並且,當將鄰接之光半導體裝置彼此拉開時,更加不易引起片材缺損或鄰接之光半導體裝置之片材附著。又,藉由光半導體元件密封用片材密封光半導體元件來製作光半導體裝置,其後進行切割,此時可進一步抑制切割部分之黏膩感,可製作外觀良好之光半導體裝置。The radiation curable resin layer is preferably thicker than the radiation non-curable adhesive layer. With such a configuration, compared with the high adhesion between the radiation non-curable adhesive layers in adjacent optical semiconductor devices in the collage state, the radiation curable resin layers in adjacent optical semiconductor devices are hardened. Low adhesion is dominant, so the adhesion between the sealing parts is lower, and when the adjacent optical semiconductor devices are pulled apart, it is less likely to cause sheet defects or adhesion of adjacent optical semiconductor devices. In addition, when an optical semiconductor device is manufactured by sealing the optical semiconductor device with a sheet for sealing the optical semiconductor device, and then dicing, the stickiness of the cut part can be further suppressed, and an optical semiconductor device with a good appearance can be produced.

上述密封部亦可含有包含著色劑之層。藉由具有此種構成,當拼貼上述光半導體裝置並應用於顯示器時,可在使用光半導體裝置時抑制各光半導體元件所發出之光之混色,在不使用光半導體裝置時調整顯示器之外觀。The said sealing part may contain the layer containing a coloring agent. By having such a structure, when the above-mentioned optical semiconductor device is combined and applied to a display, it is possible to suppress color mixing of light emitted from each optical semiconductor element when the optical semiconductor device is used, and to adjust the appearance of the display when the optical semiconductor device is not used. .

上述光半導體元件密封用片材較佳為具備具有防眩性及/或抗反射性之層。藉由具有此種構成,當拼貼上述光半導體裝置並應用於顯示器時,可抑制顯示器之光澤或光之反射,使顯示器之外觀變得良好。It is preferable that the said sheet|seat for optical-semiconductor element sealing has the layer which has antiglare property and/or antireflection property. By having such a structure, when the above-mentioned optical semiconductor device is laminated and applied to a display, glossiness or reflection of light of the display can be suppressed, and the appearance of the display can be improved.

上述光半導體元件密封用片材較佳為具備將聚酯系樹脂及/或聚醯亞胺系樹脂作為主成分之層。藉由具有此種構成,而使上述光半導體元件密封用片材之耐熱性優異,可在高溫環境下抑制光半導體元件密封用片材之熱膨脹,尺寸穩定性得到提高。又,由於可賦予作為片材之剛性,故而操作性或保持性得到提高。It is preferable that the said sheet|seat for optical-semiconductor element sealing has the layer which has a polyester resin and/or a polyimide resin as a main component. By having such a structure, the heat resistance of the said sheet|seat for optical-semiconductor element sealing is excellent, the thermal expansion of the sheet|seat for optical-semiconductor element sealing can be suppressed in a high-temperature environment, and dimensional stability improves. Moreover, since rigidity as a sheet can be imparted, handleability and holding|maintenance are improved.

在上述放射線硬化性樹脂層之硬化後截面中,在溫度23℃下利用奈米壓痕法測得之硬度較佳為1.4 MPa以上。藉由具有此種構成,而使上述放射線硬化性樹脂層在硬化後具有適度之硬度,當在拼貼狀態下將鄰接之光半導體裝置彼此拉開時,更加不易引起片材缺損或鄰接之光半導體裝置之片材附著。In the cured cross-section of the radiation-curable resin layer, the hardness measured by nanoindentation method at a temperature of 23° C. is preferably 1.4 MPa or more. With such a configuration, the radiation-curable resin layer has an appropriate hardness after curing, and when the adjacent optical semiconductor devices are pulled apart in a pasted state, it is less likely to cause chipping or adjacent light. Sheet attachment of semiconductor devices.

又,本發明提供一種光半導體裝置,其具備基板、配置於上述基板上之光半導體元件、及對上述光半導體元件進行密封之上述光半導體元件密封用片材之上述放射線硬化性樹脂層硬化而成之硬化物。此種光半導體裝置在上述放射線硬化性樹脂之硬化後,當將鄰接之光半導體裝置彼此拉開時,不易引起片材缺損或鄰接之光半導體裝置之片材附著。又,當切割時,可抑制切割部分之黏膩感,可製作外觀良好之光半導體裝置。Furthermore, the present invention provides an optical semiconductor device comprising a substrate, an optical semiconductor element disposed on the substrate, and the optical semiconductor element sealing sheet for sealing the optical semiconductor element, wherein the radiation curable resin layer is cured and formed. into a hardened object. In such an optical semiconductor device, after curing of the above-mentioned radiation curable resin, when adjacent optical semiconductor devices are separated from each other, chipping of the sheet or adhesion of adjacent optical semiconductor devices is less likely to occur. Also, when dicing, the stickiness of the cut part can be suppressed, and an optical semiconductor device with a good appearance can be produced.

上述光半導體裝置亦可為液晶畫面之背光裝置。又,上述光半導體裝置亦可為自發光型顯示裝置。上述光半導體裝置由於當應用於具有顯示器之光半導體裝置時外觀良好,故而可較佳用作液晶畫面之背光裝置或自發光型顯示裝置。The aforementioned optical semiconductor device may also be a backlight device for a liquid crystal display. Moreover, the above-mentioned optical semiconductor device may be a self-luminous display device. The above-mentioned optical semiconductor device can be preferably used as a backlight device of a liquid crystal screen or a self-luminous display device because it has a good appearance when applied to an optical semiconductor device having a display.

又,本發明提供一種具備上述背光裝置及顯示面板之圖像顯示裝置。Furthermore, the present invention provides an image display device including the above-mentioned backlight device and a display panel.

又,本發明提供一種具備上述自發光型顯示裝置之圖像顯示裝置。Furthermore, the present invention provides an image display device including the above-mentioned self-luminous display device.

又,本發明提供一種光半導體裝置之製造方法,其具備對積層體進行切割而獲得光半導體裝置之切割步驟,上述積層體具備基板、配置於上述基板上之光半導體元件、及對上述光半導體元件進行密封之上述光半導體元件密封用片材之上述放射線硬化性樹脂層硬化而成之硬化物。Also, the present invention provides a method of manufacturing an optical semiconductor device, which includes a step of dicing a laminate to obtain an optical semiconductor device, the laminate having a substrate, an optical semiconductor element arranged on the substrate, and the optical semiconductor device. A cured product obtained by curing the radiation-curable resin layer of the above-mentioned optical-semiconductor element-encapsulating sheet for element sealing.

當對放射線硬化性樹脂層照射放射線使之硬化時,於存在氧之側面中硬化受到抑制,硬化容易變得不充分。針對於此,根據具備上述切割步驟之上述製造方法,對於具備包含藉由放射線照射使上述放射線硬化性樹脂層硬化所得之硬化密封層之光半導體元件密封用片材之硬化物的積層體,藉由切除上述切割步驟中硬化不充分之側端部,可獲得因充分硬化而使密接性降低之區域露出至側面之光半導體裝置。由於以此方式所製造之光半導體裝置之硬化後之放射線硬化性樹脂層側面之密接性充分降低,故而當在拼貼狀態下將鄰接之光半導體裝置彼此拉開時,不易引起片材缺損或鄰接之光半導體裝置之片材附著。When the radiation curable resin layer is irradiated with radiation to be cured, hardening is suppressed on the side where oxygen exists, and hardening tends to become insufficient. On the other hand, according to the above-mentioned production method having the above-mentioned cutting step, for the laminate having the cured product of the optical-semiconductor element sealing sheet including the hardened sealing layer obtained by curing the above-mentioned radiation-curable resin layer by irradiation with radiation, by By cutting off the insufficiently hardened side end portion in the above-mentioned dicing step, an optical semiconductor device can be obtained in which the region where the adhesiveness has been reduced due to sufficient hardening is exposed to the side surface. Since the adhesiveness of the cured side of the radiation-curable resin layer of the photo-semiconductor device manufactured in this way is sufficiently reduced, when the adjacent photo-semiconductor devices are pulled apart from each other in the collage state, it is difficult to cause sheet defects or damage. Adjacent sheets of optical semiconductor devices are attached.

上述製造方法亦可進而具備對積層體照射放射線以使上述放射線硬化性樹脂層硬化而獲得上述硬化物之放射線照射步驟,上述積層體具備上述基板、配置於上述基板上之光半導體元件、及對上述光半導體元件進行密封之上述光半導體元件密封用片材。The above-mentioned production method may further include a radiation irradiation step of irradiating radiation to the laminated body including the above-mentioned substrate, an optical semiconductor element arranged on the above-mentioned substrate, and The said optical-semiconductor element sealing sheet which seals the said optical-semiconductor element.

上述製造方法亦可具備密封步驟:將上述光半導體元件密封用片材與設置於上述基板上之上述光半導體元件貼合,並藉由上述密封部對上述光半導體元件進行密封;其後,進行上述放射線照射步驟。The above-mentioned production method may also include a sealing step: bonding the above-mentioned optical-semiconductor element sealing sheet to the above-mentioned optical-semiconductor element provided on the above-mentioned substrate, and sealing the above-mentioned optical-semiconductor element by the above-mentioned sealing part; thereafter, performing The aforementioned radiation exposure step.

上述製造方法亦可進而具備拼貼步驟:將上述切割步驟所獲得之複數個光半導體裝置以在平面方向上接觸之方式進行排列。 [發明之效果] The above-mentioned manufacturing method may further include a tiling step of arranging the plurality of optical semiconductor devices obtained in the above-mentioned dicing step so as to be in contact with each other in the planar direction. [Effect of Invention]

根據本發明之光半導體元件密封用片材,光半導體元件之密封性優異,並且,當將鄰接之光半導體裝置彼此拉開時,不易引起片材缺損或鄰接之光半導體裝置之片材附著。因此,於光半導體裝置之拼貼後,於鄰接之光半導體裝置彼此發生位置偏移等之情形或需要重新排列之情形時,可無不良情況且容易地進行位置修正,可減輕光半導體裝置之損失,又,可經濟性良好地製造外觀良好之顯示器。According to the sheet for sealing an optical semiconductor device of the present invention, the sealing property of the optical semiconductor device is excellent, and when adjacent optical semiconductor devices are pulled apart, sheet chipping or adhesion of adjacent optical semiconductor device sheets is less likely to occur. Therefore, after the collage of optical semiconductor devices, when adjacent optical semiconductor devices are shifted from each other or rearranged, position correction can be easily performed without any trouble, and the burden of optical semiconductor devices can be reduced. On the other hand, a display with good appearance can be manufactured economically.

[光半導體元件密封用片材] 本發明之光半導體元件密封用片材至少具備基材部、及設置於上述基材部之一個面且用於密封光半導體元件之密封部。再者,於本說明書中,光半導體元件密封用片材係指用於對配置於基板上之1個以上之光半導體元件進行密封之片材。又,於本說明書中,「密封光半導體元件」係指將光半導體元件之至少一部分埋入至密封部內。 [Sheets for sealing optical semiconductor elements] The sheet|seat for optical-semiconductor element sealing of this invention is equipped with the sealing part provided in one surface of the said base part, and sealing an optical-semiconductor element at least. In addition, in this specification, the sheet|seat for optical-semiconductor element sealing means the sheet|seat for sealing one or more optical-semiconductor elements arrange|positioned on the board|substrate. Moreover, in this specification, "encapsulating an optical semiconductor element" means embedding at least a part of an optical semiconductor element in a sealing part.

本發明之光半導體元件密封用片材除了具備上述基材部及上述密封部以外,亦可具備剝離襯墊。於該情形時,上述剝離襯墊貼合於上述密封部之與上述基材部相反一側之表面。剝離襯墊用作上述密封部之保護材,在密封光半導體元件時被剝離。再者,不是必須設置剝離襯墊。The sheet for optical-semiconductor element sealing of this invention may be equipped with the release liner other than the said base material part and the said sealing part. In this case, the release liner is bonded to the surface of the sealing portion opposite to the base portion. The release liner is used as a protective material for the above-mentioned sealing portion, and is peeled when sealing the optical semiconductor element. Furthermore, it is not necessary to provide a release liner.

又,本發明之光半導體元件密封用片材亦可在上述基材部表面(與上述密封部相反一側之表面)具備表面保護膜。例如於使用下述光學膜作為上述基材部之情形時,保護膜可在光學膜之使用前加以保護。再者,不是必須設置表面保護膜。Moreover, the sheet|seat for optical-semiconductor element sealing of this invention may be equipped with the surface protection film on the said base material part surface (surface on the side opposite to the said sealing part). For example, when using the following optical film as the said base part, a protective film can be protected before using an optical film. Furthermore, it is not necessary to provide a surface protection film.

以下,對於本發明之光半導體元件密封用片材之一實施方式進行說明。圖1係表示本發明之光半導體元件密封用片材之一實施方式之剖視圖。如圖1所示,光半導體元件密封用片材1可用於對配置於基板上之1個以上之光半導體元件進行密封,且具備基材部2、密封部3及剝離襯墊4。密封部3設置於基材部2之一個面。剝離襯墊4貼附於密封部3之表面(與具有基材部2之側相反一側之表面)。換言之,光半導體元件密封用片材1依次具備基材部2、密封部3、及剝離襯墊4。Hereinafter, one Embodiment of the sheet|seat for optical-semiconductor element sealing of this invention is demonstrated. Fig. 1 is a cross-sectional view showing an embodiment of the sheet for sealing an optical semiconductor element of the present invention. As shown in FIG. 1 , the sheet 1 for optical-semiconductor element sealing can be used for sealing one or more optical-semiconductor elements arrange|positioned on the board|substrate, and is provided with the base material part 2, the sealing part 3, and the release liner 4. The sealing part 3 is provided on one surface of the base part 2 . The release liner 4 is attached to the surface of the sealing portion 3 (the surface on the opposite side to the side having the base material portion 2 ). In other words, the sheet|seat 1 for optical-semiconductor element sealing is provided with the base material part 2, the sealing part 3, and the release liner 4 in this order.

上述光半導體元件密封用片材較佳為具備具有防眩性及/或抗反射性之層。藉由具有此種構成,當拼貼上述光半導體裝置並應用於顯示器時,可抑制顯示器之光澤或光之反射,使顯示器之外觀變得良好。作為上述具有防眩性之層,可例舉防眩處理層。作為上述具有抗反射性之層,可例舉抗反射處理層。防眩處理及抗反射處理可分別藉由公知或慣用之方法實施。上述具有防眩性之層及上述具有抗反射性之層可為同一層,亦可為互不相同之層。上述具有防眩性及/或抗反射性之層可僅具有一層,亦可具有兩層以上。It is preferable that the said sheet|seat for optical-semiconductor element sealing has the layer which has antiglare property and/or antireflection property. By having such a structure, when the above-mentioned optical semiconductor device is laminated and applied to a display, glossiness or reflection of light of the display can be suppressed, and the appearance of the display can be improved. As the above-mentioned layer having anti-glare property, an anti-glare treatment layer may, for example, be mentioned. As the above-mentioned layer having antireflection properties, an antireflection treated layer may, for example, be mentioned. Antiglare treatment and antireflection treatment can be implemented by known or customary methods respectively. The above-mentioned anti-glare layer and the above-mentioned anti-reflection layer may be the same layer or different layers. The above-mentioned layer having antiglare property and/or antireflection property may have only one layer, or may have two or more layers.

上述具有防眩性及/或抗反射性之層可為上述基材部中所包含之層、上述密封部中所包含之層、或上述基材部及上述密封部中都不包含之其他任一層,較佳為上述基材部及/或上述密封部中所包含之層,更佳為上述基材部中所包含之層。The layer having antiglare and/or antireflection properties may be a layer included in the base material part, a layer included in the sealing part, or any other layer that is not included in the base material part and the sealing part. One layer is preferably a layer included in the aforementioned base material portion and/or the aforementioned sealing portion, more preferably a layer included in the aforementioned base material portion.

上述光半導體元件密封用片材較佳為具備將聚酯系樹脂及/或聚醯亞胺系樹脂作為主成分(構成樹脂中之質量比率最高之成分)之層。藉由具有此種構成,而使上述光半導體元件密封用片材之耐熱性優異,在高溫環境下可抑制光半導體元件密封用片材之熱膨脹,尺寸穩定性得到提高。又,由於可賦予作為片材之剛性,故而操作性或保持性得到提高。將上述聚酯系樹脂及/或聚醯亞胺系樹脂作為主成分之層可僅具有一層,亦可具有兩層以上。It is preferable that the said sheet|seat for optical-semiconductor element sealing has the layer which has polyester-type resin and/or polyimide-type resin as a main component (the component with the highest mass ratio among constituent resins). By having such a structure, the said sheet|seat for optical-semiconductor element sealing is excellent in heat resistance, the thermal expansion of the sheet|seat for optical-semiconductor element sealing can be suppressed in a high-temperature environment, and dimensional stability improves. Moreover, since rigidity as a sheet can be imparted, handleability and holding|maintenance are improved. The layer mainly composed of the polyester-based resin and/or polyimide-based resin may have only one layer, or may have two or more layers.

將上述聚酯系樹脂及/或聚醯亞胺系樹脂作為主成分之層可為上述基材部中所包含之層、上述密封部中所包含之層、或上述基材部及上述密封部中都不包含之其他任一層,較佳為上述基材部及/或上述密封部中所包含之層,更佳為上述基材部中所包含之層。The layer mainly composed of the polyester-based resin and/or polyimide-based resin may be a layer included in the base material part, a layer included in the sealing part, or the base material part and the sealing part. Any other layer not included in is preferably a layer included in the above-mentioned base material part and/or the above-mentioned sealing part, more preferably a layer included in the above-mentioned base material part.

(密封部) 上述密封部具備具有藉由放射線照射而硬化之性質之樹脂層(放射線硬化性樹脂層)及不具有藉由放射線照射而硬化之性質之黏著劑層(放射線非硬化性黏著劑層)。並且,當密封光半導體元件時,上述放射線非硬化性黏著劑層位於成為光半導體元件側之密封部表面。具體而言,當密封光半導體元件時,上述放射線非硬化性黏著劑層位於成為光半導體元件側之光半導體元件密封用片材表面(於具備剝離襯墊之情形時,為去除剝離襯墊後之片材表面)。例如,於圖1所示之光半導體元件密封用片材1中,密封部3包含放射線硬化性樹脂層31及放射線非硬化性黏著劑層32。放射線非硬化性黏著劑層32位於去除剝離襯墊4後之光半導體元件密封用片材1之與基材部2相反一側之表面。 (sealing part) The sealing portion includes a resin layer cured by radiation (radiation curable resin layer) and an adhesive layer not cured by radiation (radiation non-curable adhesive layer). And when sealing an optical semiconductor element, the said radiation non-hardening adhesive layer is located in the surface of the sealing part which becomes an optical semiconductor element side. Specifically, when sealing an optical semiconductor element, the radiation non-curable adhesive layer is located on the surface of the sheet for sealing an optical semiconductor element on the optical semiconductor element side (in the case of a release liner, after removing the release liner) the surface of the sheet). For example, in the sheet|seat 1 for optical-semiconductor element sealing shown in FIG. 1, the sealing part 3 contains the radiation curable resin layer 31 and the radiation non-curable adhesive agent layer 32. The radiation non-hardening adhesive layer 32 is located in the surface of the sheet|seat 1 for optical-semiconductor element sealing which remove|eliminated the release liner 4 by the side opposite to the base material part 2.

藉由上述放射線非硬化性黏著劑層位於上述表面,當上述光半導體元件密封用片材密封光半導體元件時,上述放射線非硬化性黏著劑層對光半導體元件及基板之密接性優異,光半導體元件之密封性優異。並且,密封後,藉由放射線照射使上述放射線硬化性樹脂層硬化,使密封用片材側面之密接性降低。藉此,拼貼狀態下鄰接之光半導體裝置中之密封部彼此之密接性較低,並且,當將鄰接之光半導體裝置彼此拉開時,不易引起片材缺損或鄰接之光半導體裝置之片材附著。又,上述基材部成為上述密封部之支持體,藉由具備上述基材部,而使上述光半導體元件密封用片材之操作性優異。又,藉由光半導體元件密封用片材密封光半導體元件來製作光半導體裝置,其後進行切割,此時可進一步抑制切割部分之黏膩感,可製作外觀良好之光半導體裝置。When the above-mentioned radiation non-curable adhesive layer is located on the above-mentioned surface, when the above-mentioned optical-semiconductor element sealing sheet seals an optical-semiconductor element, the above-mentioned radiation-non-curable adhesive layer has excellent adhesion to the optical-semiconductor element and the substrate, and the optical semiconductor The sealing performance of components is excellent. And after sealing, the said radiation curable resin layer is cured by radiation irradiation, and the adhesiveness of the side surface of the sheet|seat for sealing is reduced. Thereby, the adhesiveness of the sealing parts in the adjacent optical semiconductor devices in the collage state is low, and when the adjacent optical semiconductor devices are pulled apart, it is difficult to cause sheet defects or damage the adjacent optical semiconductor devices. material attached. Moreover, the said base material part becomes the support body of the said sealing part, and the handling property of the said sheet|seat for optical-semiconductor element sealing is excellent by providing the said base material part. In addition, when an optical semiconductor device is manufactured by sealing the optical semiconductor device with a sheet for sealing the optical semiconductor device, and then dicing, the stickiness of the cut part can be further suppressed, and an optical semiconductor device with a good appearance can be produced.

於上述密封部中,上述放射線非硬化性黏著劑層與上述放射線硬化性樹脂層積層。上述放射線非硬化性黏著劑層與上述放射線硬化性樹脂層可不經由其他層直接積層,亦可經由其他層積層。上述放射線非硬化性黏著劑層及上述放射線硬化性樹脂層可分別為單層,亦可為相同或者組成或厚度等不同之複層。於上述密封部具有上述放射線非硬化性黏著劑層及上述放射線硬化性樹脂層中之至少一者複數個之情形時,複數個層可連續積層,亦可經由其他層積層。再者,於具有複數個上述放射線非硬化性黏著劑層之情形時,可於光半導體元件密封用片材之與基材部相反一側之表面具有1層,其他放射線非硬化性黏著劑層之位置不受特別限定。In the sealing part, the radiation non-curable adhesive layer and the radiation curable resin are laminated. The radiation non-curable adhesive layer and the radiation curable resin layer may be directly laminated without intervening other layers, or may be interposed via other laminated layers. The above radiation non-curable adhesive layer and the above radiation curable resin layer may be a single layer, or may be multiple layers of the same or different compositions or thicknesses. When the sealing portion has a plurality of at least one of the radiation non-curable adhesive layer and the radiation curable resin layer, the plurality of layers may be laminated continuously or through other laminated layers. Furthermore, in the case of having a plurality of the above-mentioned non-radiation-curable adhesive layers, one layer may be provided on the surface of the sheet for sealing an optical semiconductor element opposite to the base portion, and the other non-radiation-curable adhesive layer The location is not particularly limited.

上述放射線硬化性樹脂層之厚度(總厚度)相對於上述放射線非硬化性黏著劑層之厚度(總厚度)之比[放射線硬化性樹脂層之厚度/放射線非硬化性黏著劑層之厚度]較佳為0.1以上,更佳為0.8以上,進而較佳為超過1.0,尤佳為4以上。若上述比率為0.1以上,則當將鄰接之光半導體裝置彼此拉開時,更加不引起片材缺損或鄰接之光半導體裝置之片材附著。又,上述比率較佳為200以下,更佳為150以下。The ratio of the thickness (total thickness) of the radiation curable resin layer to the thickness (total thickness) of the radiation non-curable adhesive layer [thickness of the radiation curable resin layer/thickness of the radiation non-curable adhesive layer] is higher than Preferably, it is 0.1 or more, More preferably, it is 0.8 or more, More preferably, it exceeds 1.0, Most preferably, it is 4 or more. When the said ratio is 0.1 or more, when adjacent optical-semiconductor devices are pulled apart, sheet|seat chipping and the sheet|seat adhesion of an adjacent optical-semiconductor device will not occur further. Moreover, the above-mentioned ratio is preferably 200 or less, more preferably 150 or less.

上述放射線硬化性樹脂層較佳為比上述放射線非硬化性黏著劑層更厚。藉由具有此種構成,相較於拼貼狀態下鄰接之光半導體裝置中之放射線非硬化性黏著劑層彼此之高密接性,鄰接之光半導體裝置中之放射線硬化性樹脂層在硬化後之低密接性成為主導,因此密封部彼此之密接性更低,並且,當將鄰接之光半導體裝置彼此拉開時,更加不易引起片材缺損或鄰接之光半導體裝置之片材附著。又,藉由光半導體元件密封用片材密封光半導體元件來製作光半導體裝置,其後進行切割,此時可進一步抑制切割部分之黏膩感,可製作外觀良好之光半導體裝置。再者,於具有複數個上述放射線硬化性樹脂層或上述放射線非硬化性黏著劑層之情形時,上述厚度為複層之合計厚度(總厚度)。The radiation curable resin layer is preferably thicker than the radiation non-curable adhesive layer. With such a configuration, compared with the high adhesion between the radiation non-curable adhesive layers in adjacent optical semiconductor devices in the collage state, the radiation curable resin layers in adjacent optical semiconductor devices are hardened. Low adhesion is dominant, so the adhesion between the sealing parts is lower, and when the adjacent optical semiconductor devices are pulled apart, it is less likely to cause sheet defects or adhesion of adjacent optical semiconductor devices. In addition, when an optical semiconductor device is manufactured by sealing the optical semiconductor device with a sheet for sealing the optical semiconductor device, and then dicing, the stickiness of the cut part can be further suppressed, and an optical semiconductor device with a good appearance can be produced. Furthermore, when there are a plurality of the above-mentioned radiation-curable resin layers or the above-mentioned non-radiation-curable adhesive layers, the above-mentioned thickness is the total thickness (total thickness) of the multiple layers.

位於上述光半導體元件密封用片材之表面(即,上述密封部之表面)之放射線非硬化性黏著劑層之厚度較佳為1 μm以上,更佳為4 μm以上,進而較佳為15 μm以上。若上述厚度為1 μm以上,則光半導體元件密封用片材對光半導體元件或基板之密接性更加優異。上述厚度較佳為500 μm以下,更佳為300 μm以下,進而較佳為200 μm以下。若上述厚度為500 μm以下,則當將鄰接之光半導體裝置彼此拉開時,更加不易引起片材缺損或鄰接之光半導體裝置之片材附著。又,當切割光半導體裝置時,可進一步抑制切割部分之黏膩感,可製作外觀良好之光半導體裝置。The thickness of the radiation non-curable adhesive layer located on the surface of the above-mentioned optical semiconductor element sealing sheet (that is, the surface of the above-mentioned sealing portion) is preferably at least 1 μm, more preferably at least 4 μm, and still more preferably at least 15 μm. above. When the said thickness is 1 micrometer or more, the adhesiveness of the sheet|seat for optical-semiconductor element sealing with respect to an optical-semiconductor element or a board|substrate will be more excellent. The aforementioned thickness is preferably at most 500 μm, more preferably at most 300 μm, and still more preferably at most 200 μm. If the above-mentioned thickness is 500 μm or less, when adjacent optical semiconductor devices are separated from each other, it is less likely to cause sheet damage or adhesion of adjacent optical semiconductor devices. In addition, when cutting an optical semiconductor device, the stickiness of the cut part can be further suppressed, and an optical semiconductor device with a good appearance can be produced.

上述放射線硬化性樹脂層之厚度(總厚度)較佳為20~800 μm,更佳為30~700 μm,進而較佳為50~600 μm。若上述厚度20 μm以上,則當將鄰接之光半導體裝置彼此拉開時,更加不易引起片材缺損或鄰接之光半導體裝置之片材附著。若上述厚度為800 μm以下,則可使密封部之厚度變薄,可使光半導體裝置變得更薄。The thickness (total thickness) of the radiation-curable resin layer is preferably from 20 to 800 μm, more preferably from 30 to 700 μm, and still more preferably from 50 to 600 μm. If the above-mentioned thickness is 20 μm or more, when the adjacent optical semiconductor devices are separated from each other, it is less likely to cause sheet chipping or adhesion of adjacent optical semiconductor devices. When the said thickness is 800 micrometers or less, the thickness of a sealing part can be made thin, and an optical semiconductor device can be made thinner.

上述光半導體元件密封用片材較佳為具備放射線硬化性樹脂層,其1層之厚度在構成上述密封部之所有層中最厚。再者,將相同組成之複數個層直接積層而成之層視為1個層。又,於具有2個以上之最厚之層之情形時,任一層均屬於最厚之層。It is preferable that the said sheet|seat for optical-semiconductor element sealing has a radiation curable resin layer, and the thickness of one layer is the thickest among all the layers which comprise the said sealing part. In addition, the layer which laminated|stacked the several layers of the same composition as it is is regarded as 1 layer. Also, when there are two or more thickest layers, any one layer belongs to the thickest layer.

相對於光半導體元件密封用片材之總厚度(其中,剝離襯墊及表面保護膜除外)100%,上述放射線硬化性樹脂層之厚度(總厚度)之比率較佳為5~90%,更佳為10~85%,進而較佳為40~80%。若上述比率為5%以上,則當將鄰接之光半導體裝置彼此拉開時,更加不易引起片材缺損或鄰接之光半導體裝置之片材附著。若上述厚度為90%以下,則可使密封部之厚度變薄,可使光半導體裝置變得更薄。The ratio of the thickness (total thickness) of the above-mentioned radiation curable resin layer is preferably 5 to 90%, more preferably 100% of the total thickness of the sheet for sealing optical semiconductor elements (excluding the release liner and the surface protection film). Preferably it is 10-85%, More preferably, it is 40-80%. If the above-mentioned ratio is 5% or more, when the adjacent optical semiconductor devices are separated from each other, it is less likely to cause sheet damage or adhesion of adjacent optical semiconductor devices. If the said thickness is 90% or less, the thickness of a sealing part can be made thinner, and an optical semiconductor device can be made thinner.

上述放射線硬化性樹脂層在硬化後層截面中,在溫度23℃下利用奈米壓痕法測得之硬度較佳為1.4 MPa以上,更佳為11.0 MPa以上,進而較佳為63.0 MPa以上。關於上述利用奈米壓痕法測得之硬度,當將壓頭壓入至對象表面時,在負荷時及卸載時連續測定對壓頭之負荷荷重及壓入深度,根據所獲得之負荷荷重-壓入深度曲線而求出上述利用奈米壓痕法測得之硬度。若上述硬度為1.4 MPa以上,則上述放射線硬化性樹脂層在硬化後具有適度之硬度,當在拼貼狀態下將鄰接之光半導體裝置彼此拉開時,更加不易引起片材缺損或鄰接之光半導體裝置之片材附著。The radiation-curable resin layer has a hardness of at least 1.4 MPa, more preferably at least 11.0 MPa, and still more preferably at least 63.0 MPa, as measured by nanoindentation at a temperature of 23° C. in the cross section of the cured layer. Regarding the above-mentioned hardness measured by the nanoindentation method, when the indenter is pressed into the object surface, the load on the indenter and the indentation depth are continuously measured when the indenter is loaded and unloaded. According to the obtained load- The indentation depth curve is used to obtain the hardness measured by the nano-indentation method. If the above-mentioned hardness is 1.4 MPa or more, the above-mentioned radiation-curable resin layer has an appropriate hardness after curing, and when the adjacent optical semiconductor devices are pulled apart in a pasted state, it is less likely to cause sheet defects or adjacent light. Sheet attachment of semiconductor devices.

上述放射線硬化性樹脂層具有放射線硬化性。作為上述放射線,例如可例舉:電子束、紫外線、α射線、β射線、γ射線、或X射線等。The radiation curable resin layer has radiation curability. Examples of the aforementioned radiation include electron beams, ultraviolet rays, α-rays, β-rays, γ-rays, and X-rays.

作為上述放射線硬化性樹脂層,例如可例舉:含有基礎聚合物、及具有放射線聚合性碳-碳雙鍵等官能基之放射線聚合性單體成分或低聚物成分之層;包含具有放射線聚合性官能基之聚合物作為基礎聚合物之層:等。Examples of the aforementioned radiation-curable resin layer include: a layer containing a base polymer and a radiation-polymerizable monomer component or oligomer component having a functional group such as a radiation-polymerizable carbon-carbon double bond; Functional polymer as layer of base polymer: etc.

作為構成上述放射線硬化性樹脂層之樹脂,可例舉:公知或慣用之具有放射線硬化性之樹脂,例如可例舉:丙烯酸系樹脂、胺基甲酸酯丙烯酸酯系樹脂、環氧系樹脂、環氧丙烯酸酯系樹脂、氧雜環丁烷系樹脂、矽酮樹脂、矽酮丙烯酸系樹脂、聚酯系樹脂等。上述樹脂可僅使用一種,亦可使用兩種以上。As the resin constituting the above-mentioned radiation curable resin layer, there may be mentioned: known or commonly used radiation curable resins, for example, acrylic resins, urethane acrylate resins, epoxy resins, Epoxy acrylate resin, oxetane resin, silicone resin, silicone acrylic resin, polyester resin, etc. The above-mentioned resins may be used alone or in combination of two or more.

上述放射線硬化性樹脂層較佳為具有黏著性之樹脂層即放射線硬化性黏著劑層。藉由具有此種構成,當密封光半導體元件時,可容易地埋入光半導體元件,又,於放射線硬化前,基材部與位於光半導體元件側表面之放射線非硬化性黏著劑層之密接性優異,光半導體元件之密封性更加優異。The radiation-curable resin layer is preferably an adhesive resin layer, that is, a radiation-curable adhesive layer. By having such a structure, when sealing the optical semiconductor element, the optical semiconductor element can be easily buried, and before the radiation curing, the base portion and the radiation non-curable adhesive layer on the side surface of the optical semiconductor element are in close contact. Excellent performance, the sealing performance of optical semiconductor elements is even more excellent.

作為形成上述放射線非硬化性黏著劑層之黏著劑,可使用不具有放射線硬化性即不含有具有放射線硬化性之化合物的公知或慣用之感壓型黏著劑。但,可少量含有自所積層之其他層移行而侵入之不可避免之具有放射線硬化性之化合物。作為上述黏著劑,例如可例舉:丙烯酸系黏著劑、橡膠系黏著劑(天然橡膠系、合成橡膠系、該等之混合系等)、矽酮系黏著劑、聚酯系黏著劑、胺基甲酸酯系黏著劑、聚醚系黏著劑、聚醯胺系黏著劑、氟系黏著劑等。上述黏著劑可僅使用一種,亦可使用兩種以上。As the adhesive for forming the radiation non-curable adhesive layer, a known or conventional pressure-sensitive adhesive that does not have radiation curability, that is, does not contain a radiation curable compound, can be used. However, it may contain a small amount of unavoidable radiation-hardening compounds that migrate and invade from other layers of the laminated layer. Examples of the above-mentioned adhesives include: acrylic adhesives, rubber adhesives (natural rubber, synthetic rubber, and mixtures thereof), silicone adhesives, polyester adhesives, amine-based adhesives, etc. Formate-based adhesives, polyether-based adhesives, polyamide-based adhesives, fluorine-based adhesives, etc. The said adhesive agent may use only 1 type, and may use 2 or more types.

上述密封部亦可具有除上述放射線硬化性樹脂層及上述放射線非硬化性黏著劑層以外之其他層。其中,相對於上述密封部之厚度100%,上述放射線硬化性樹脂層及上述放射線非硬化性黏著劑層之合計厚度之比率較佳為70%以上,更佳為80%以上,進而較佳為90%以上,尤佳為96%以上。The sealing part may have layers other than the radiation curable resin layer and the radiation non-curable adhesive layer. Among them, the ratio of the total thickness of the radiation curable resin layer and the radiation non-curable adhesive layer to 100% of the thickness of the sealing portion is preferably 70% or more, more preferably 80% or more, and still more preferably 80% or more. More than 90%, preferably more than 96%.

上述密封部亦可含有包含著色劑之層。藉由具有此種構成,當拼貼上述光半導體裝置並應用於顯示器時,可在使用光半導體裝置時抑制各光半導體元件所發出之光之混色,在不使用光半導體裝置時調整顯示器之外觀。上述包含著色劑之層可僅具有一層,亦可具有兩層以上。The said sealing part may contain the layer containing a coloring agent. By having such a structure, when the above-mentioned optical semiconductor device is combined and applied to a display, it is possible to suppress color mixing of light emitted from each optical semiconductor element when the optical semiconductor device is used, and to adjust the appearance of the display when the optical semiconductor device is not used. . The layer containing the said coloring agent may have only one layer, and may have two or more layers.

上述包含著色劑之層可為上述放射線硬化性樹脂層、上述放射線非硬化性黏著劑層、及除該等以外之其他層,較佳為上述放射線硬化性樹脂層及/或上述放射線非硬化性黏著劑層為包含著色劑之層,更佳為上述放射線非硬化性黏著劑層為包含著色劑之層。The above-mentioned layer containing a coloring agent may be the above-mentioned radiation curable resin layer, the above-mentioned radiation non-curable adhesive layer, and other layers other than these, preferably the above-mentioned radiation-curable resin layer and/or the above-mentioned radiation non-curable adhesive layer. The adhesive layer is a layer containing a colorant, and it is more preferable that the radiation non-curable adhesive layer is a layer containing a colorant.

作為上述著色劑,較佳為黑系著色劑。作為上述黑系著色劑,可使用公知或慣用之用於呈現黑色之著色劑(顏料、染料等),例如可例舉:碳黑(爐黑、槽黑、乙炔黑、熱碳黑、燈黑、松煙等)、石墨、氧化銅、二氧化錳、苯胺黑、苝黑、鈦黑、花青黑、活性碳、鐵氧體(非磁性鐵氧體、磁性鐵氧體等)、磁鐵礦、氧化鉻、氧化鐵、二硫化鉬、鉻錯合物、蒽醌系著色劑、氮化鋯等。黑系著色劑可僅使用一種,亦可使用兩種以上。又,亦可使用如下著色劑,即,組合並調配呈現除黑色以外之色之著色劑來作為黑系著色劑發揮作用。As said coloring agent, a black coloring agent is preferable. As the above-mentioned black coloring agent, known or customary coloring agents (pigments, dyes, etc.) for presenting black can be used, for example, carbon black (furnace black, channel black, acetylene black, thermal carbon black, lamp black , pine smoke, etc.), graphite, copper oxide, manganese dioxide, aniline black, perylene black, titanium black, cyanine black, activated carbon, ferrite (non-magnetic ferrite, magnetic ferrite, etc.), magnet Ore, chromium oxide, iron oxide, molybdenum disulfide, chromium complexes, anthraquinone colorants, zirconium nitride, etc. One type of black coloring agent may be used, or two or more types may be used. Moreover, it is also possible to use a coloring agent which functions as a black-type coloring agent combining and preparing the coloring agent which expresses the color other than black.

(基材部) 上述基材部成為上述密封部之支持體,藉由具備上述基材部,而使上述光半導體元件密封用片材之操作性優異。上述基材部可為單層,可為相同或者組成或厚度等不同之複層。於上述基材部為複層之情形時,各層可藉由黏著劑層等其他層而貼合。再者,當使用光半導體元件密封用片材密封光半導體元件時,基材部中所使用之基材層係與密封部一起貼附於具備光半導體元件之基板之部分,光半導體元件密封用片材使用時(貼附時)所剝離之剝離襯墊、或僅保護基材部表面之表面保護膜不包含在「基材部」中。 (Substrate Department) The said base material part becomes the support body of the said sealing part, and the handling property of the said sheet|seat for optical-semiconductor element sealing is excellent by providing the said base material part. The above-mentioned base material portion may be a single layer, or may be multiple layers of the same or different compositions or thicknesses. In the case where the above-mentioned base material portion is multi-layered, each layer can be bonded via another layer such as an adhesive layer. Furthermore, when the optical semiconductor element is sealed with a sheet for sealing the optical semiconductor element, the base material layer used in the base portion is attached to the portion of the substrate having the optical semiconductor element together with the sealing portion, and the sealing portion for the optical semiconductor element is The release liner that is peeled off when the sheet is used (attached), or the surface protection film that only protects the surface of the base part is not included in the "base part".

作為構成上述基材部之基材層,例如可例舉:玻璃或塑膠基材(特別是塑膠膜)等。作為構成上述塑膠基材之樹脂,例如可例舉:低密度聚乙烯、直鏈狀低密度聚乙烯、中密度聚乙烯、高密度聚乙烯、超低密度聚乙烯、無規共聚聚丙烯、嵌段共聚聚丙烯、均聚聚丙烯、聚丁烯、聚甲基戊烯、離子聚合物、乙烯-(甲基)丙烯酸共聚物、乙烯-(甲基)丙烯酸酯(無規、交替)共聚物、乙烯-乙酸乙烯酯共聚物(EVA)、乙烯-丙烯共聚物、環烯系聚合物、乙烯-丁烯共聚物、乙烯-己烯共聚物等聚烯烴樹脂;聚胺基甲酸酯;聚對苯二甲酸乙二酯(PET)、聚萘二甲酸乙二酯、聚對苯二甲酸丁二酯(PBT)等聚酯;聚碳酸酯;聚醯亞胺系樹脂;聚醚醚酮;聚醚醯亞胺;芳香族聚醯胺、全芳香族聚醯胺等聚醯胺;聚苯硫醚;氟樹脂;聚氯乙烯;聚偏二氯乙烯;三乙醯纖維素(TAC)等纖維素樹脂;矽酮樹脂;聚甲基丙烯酸甲酯(PMMA)等丙烯酸系樹脂;聚碸;聚芳酯;聚乙酸乙烯酯等。上述樹脂可僅使用一種,亦可使用兩種以上。As a base material layer which comprises the said base material part, a glass or a plastic base material (especially a plastic film) etc. are mentioned, for example. As the resin constituting the above-mentioned plastic substrate, for example, low-density polyethylene, linear low-density polyethylene, medium-density polyethylene, high-density polyethylene, ultra-low-density polyethylene, random copolymerized polypropylene, intercalated Segment copolymer polypropylene, homopolypropylene, polybutene, polymethylpentene, ionomer, ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylate (random, alternating) copolymer , ethylene-vinyl acetate copolymer (EVA), ethylene-propylene copolymer, cycloolefin polymer, ethylene-butene copolymer, ethylene-hexene copolymer and other polyolefin resins; polyurethane; poly Polyesters such as polyethylene terephthalate (PET), polyethylene naphthalate, and polybutylene terephthalate (PBT); polycarbonate; polyimide resins; polyether ether ketone; Polyetherimide; polyamides such as aromatic polyamide and wholly aromatic polyamide; polyphenylene sulfide; fluororesin; polyvinyl chloride; polyvinylidene chloride; triacetyl cellulose (TAC), etc. Cellulose resins; silicone resins; acrylic resins such as polymethyl methacrylate (PMMA); polyphenols; polyarylates; polyvinyl acetate, etc. The above-mentioned resins may be used alone or in combination of two or more.

上述基材層可為抗反射(AR)膜、偏光板、相位差板等各種光學膜。於上述基材部具有光學膜之情形時,上述光半導體元件密封用片材可直接應用於光學構件。The aforementioned substrate layer can be various optical films such as an anti-reflection (AR) film, a polarizing plate, a retardation plate, and the like. When the said base material part has an optical film, the said sheet|seat for optical-semiconductor element sealing can be applied to an optical member as it is.

上述塑膠膜較佳為包含聚酯系樹脂及/或聚醯亞胺系樹脂作為主成分(構成樹脂中之質量比率最高之成分)。藉由具有此種構成,而使上述光半導體元件密封用片材之耐熱性優異,在高溫環境下可抑制光半導體元件密封用片材之熱膨脹,尺寸穩定性得到提高。又,由於可賦予作為片材之剛性,故而操作性或保持性得到提高。The above-mentioned plastic film preferably contains polyester resin and/or polyimide resin as main components (components with the highest mass ratio among the resins). By having such a structure, the said sheet|seat for optical-semiconductor element sealing is excellent in heat resistance, the thermal expansion of the sheet|seat for optical-semiconductor element sealing can be suppressed in a high-temperature environment, and dimensional stability improves. Moreover, since rigidity as a sheet can be imparted, handleability and holding|maintenance are improved.

上述塑膠膜之厚度較佳為20~200 μm,更佳為40~150 μm。若上述厚度為20 μm以上,則更加提高光半導體元件密封用片材之支持性及操作性。若上述厚度為200 μm以下,則可使光半導體元件密封用片材之厚度變薄,可使光半導體裝置變得更薄。The thickness of the plastic film is preferably 20-200 μm, more preferably 40-150 μm. When the said thickness is 20 micrometers or more, the supportability and handleability of the sheet|seat for optical-semiconductor element sealing will improve more. When the said thickness is 200 micrometers or less, the thickness of the sheet|seat for optical-semiconductor element sealing can be made thinner, and an optical-semiconductor device can be made thinner.

上述基材部較佳為包含將聚酯系樹脂及/或聚醯亞胺系樹脂作為主成分之塑膠膜、及光學膜。一般而言,偏光板等光學膜之支持性或操作性有變差之傾向,藉由與上述塑膠膜組合使用,可靈活利用兩個優點。於該情形時,特別是於上述基材部中,上述塑膠膜較佳為上述密封部側。The above-mentioned base material part preferably includes a plastic film mainly composed of a polyester-based resin and/or a polyimide-based resin, and an optical film. Generally speaking, the supportability or operability of optical films such as polarizing plates tends to deteriorate. By using them in combination with the above-mentioned plastic films, two advantages can be flexibly utilized. In this case, especially in the base material part, the plastic film is preferably on the side of the sealing part.

上述基材部較佳為具備具有防眩性及/或抗反射性之層。關於上述具有防眩性及/或抗反射性之層,例如,藉由對上述基材層之至少一個面實施防眩處理及/或抗反射處理而獲得上述防眩處理層或抗反射處理層。上述防眩處理層及上述抗反射處理層可為相同層,亦可為互不相同之層。防眩處理及抗反射處理可分別藉由公知或慣用之方法實施。It is preferable that the said base material part has the layer which has antiglare property and/or antireflection property. Regarding the above-mentioned layer having anti-glare property and/or anti-reflection property, for example, the above-mentioned anti-glare treatment layer or anti-reflection treatment layer is obtained by subjecting at least one surface of the above-mentioned substrate layer to anti-glare treatment and/or anti-reflection treatment . The above-mentioned anti-glare treatment layer and the above-mentioned anti-reflection treatment layer may be the same layer or different layers. Antiglare treatment and antireflection treatment can be implemented by known or customary methods respectively.

關於上述基材部之具備上述密封部之側之表面,為了提高與密封部之密接性、保持性等,例如可實施如下表面處理:電暈放電處理、電漿處理、磨砂加工處理、臭氧暴露處理、火焰暴露處理、高壓電擊暴露處理、離子化輻射處理等物理處理;鉻酸處理等化學處理;利用塗佈劑(底塗劑)所進行之易接著處理;等。用於提高密接性之表面處理較佳為對基材部中之密封部側之整個表面實施。Regarding the surface of the above-mentioned base material portion provided with the above-mentioned sealing portion, in order to improve the adhesion and retention with the sealing portion, for example, the following surface treatment may be performed: corona discharge treatment, plasma treatment, frosting treatment, ozone exposure Physical treatments such as flame exposure treatment, high-voltage electric shock exposure treatment, and ionizing radiation treatment; chemical treatments such as chromic acid treatment; easy-adhesive treatment using coating agents (primers); etc. The surface treatment for improving the adhesiveness is preferably performed on the entire surface of the sealing part side in the base part.

於圖1所示之光半導體元件密封用片材1中,基材部2為具有光學膜21及塑膠膜23之複層,光學膜21與塑膠膜23經由黏著劑層22貼合。又,對光學膜21之與塑膠膜23相對之面實施防眩處理及抗反射處理。In the sheet 1 for sealing optical semiconductor elements shown in FIG. 1 , the base portion 2 is a multilayer having an optical film 21 and a plastic film 23 , and the optical film 21 and the plastic film 23 are bonded via an adhesive layer 22 . Moreover, antiglare treatment and antireflection treatment are performed on the surface of the optical film 21 that faces the plastic film 23 .

關於上述基材部之厚度,就作為支持體之功能及表面之耐擦傷性優異之觀點而言,上述基材部之厚度較佳為5 μm以上,更佳為10 μm以上。關於上述基材部之厚度,就透明性更加優異之觀點而言,較佳為300 μm以下,更佳為200 μm以下。The thickness of the base material part is preferably 5 μm or more, more preferably 10 μm or more, from the viewpoint of excellent function as a support and excellent surface scratch resistance. The thickness of the base material portion is preferably 300 μm or less, more preferably 200 μm or less, from the viewpoint of more excellent transparency.

(剝離襯墊) 上述剝離襯墊係用於被覆並保護上述密封部表面之元件,當將光半導體元件密封用片材貼合於配置有光半導體元件之基板時,可自該片材剝離上述剝離襯墊。 (peel liner) The release liner is used to cover and protect an element on the surface of the sealing portion, and when the sheet for sealing an optical semiconductor element is bonded to a substrate on which an optical semiconductor element is arranged, the release liner can be peeled off from the sheet.

作為上述剝離襯墊,例如可例舉:聚對苯二甲酸乙二酯(PET)膜、聚乙烯膜、聚丙烯膜、藉由氟系剝離劑或丙烯酸長鏈烷基酯系剝離劑等剝離劑進行表面塗佈之塑膠膜或紙類等。Examples of the above-mentioned release liner include: polyethylene terephthalate (PET) film, polyethylene film, polypropylene film, release by a fluorine-based release agent or a long-chain alkyl acrylate-based release agent, etc. Plastic films or papers that are surface-coated with agents.

上述剝離襯墊之厚度例如為10~200 μm,較佳為15~150 μm、更佳為20~100 μm。若上述厚度為10 μm以上,則剝離襯墊在加工時不易因切口而斷裂。若上述厚度為200 μm以下,則使用時更加容易自上述密封部將剝離襯墊剝離。The thickness of the release liner is, for example, 10-200 μm, preferably 15-150 μm, more preferably 20-100 μm. When the thickness is 10 μm or more, the release liner is less likely to be broken by notches during processing. When the said thickness is 200 micrometers or less, it becomes easier to peel off a release liner from the said sealing part at the time of use.

(光半導體元件密封用片材) 相對於上述光半導體元件密封用片材之厚度(其中,剝離襯墊及表面保護膜除外)100%,上述光半導體元件密封用片材中之上述基材部及上述密封部之合計厚度之比率較佳為80%以上,更佳為90%以上。又,包含基材部及密封部在內的自基材部表面至密封部表面為止之厚度之比率較佳為上述範圍內。 (Sheet for sealing optical semiconductor elements) Ratio of the total thickness of the above-mentioned base part and the above-mentioned sealing part in the above-mentioned sheet for optical-semiconductor element sealing with respect to 100% of the thickness of the above-mentioned sheet for sealing an optical-semiconductor element (excluding the release liner and the surface protection film) Preferably it is 80% or more, more preferably 90% or more. Moreover, it is preferable that the ratio of the thickness from the surface of a base part including a base part and a sealing part to the surface of a sealing part falls within the said range.

上述光半導體元件密封用片材中之上述基材部及上述密封部之合計厚度較佳為100~900 μm,更佳為200~800 μm。又,包含基材部及密封部在內的自基材部表面至密封部表面為止之厚度較佳為上述範圍內。The total thickness of the said base material part and the said sealing part in the said sheet|seat for optical-semiconductor element sealing becomes like this. Preferably it is 100-900 micrometers, More preferably, it is 200-800 micrometers. Moreover, it is preferable that the thickness from the base material part surface to the sealing part surface including a base material part and a sealing part falls within the said range.

對本發明之光半導體元件密封用片材之製造方法之一實施方式進行說明。例如,圖1所示之光半導體元件密封用片材1可藉由下述方法進行製作。首先,於構成基材部2之塑膠膜23形成放射線硬化性樹脂層31。上述放射線硬化性樹脂層31可藉由如下方式製作,即,將形成放射線硬化性樹脂層31之樹脂組成物塗佈於塑膠膜23之一個面形成樹脂組成物層,其後進行利用加熱所進行之脫溶劑或熱硬化等除放射線照射以外之硬化,使該樹脂組成物層固化。於使放射線硬化性樹脂層31之厚度變厚之情形時,亦可將另外在剝離襯墊之剝離處理面上以相同之方式所製作之放射線硬化性樹脂層重疊在形成於上述塑膠膜23上之放射線硬化性樹脂層上進行積層。One embodiment of the manufacturing method of the sheet|seat for optical-semiconductor element sealing of this invention is demonstrated. For example, the sheet|seat 1 for optical-semiconductor element sealing shown in FIG. 1 can be produced by the following method. First, the radiation curable resin layer 31 is formed on the plastic film 23 constituting the base portion 2 . The above-mentioned radiation curable resin layer 31 can be produced by applying the resin composition for forming the radiation curable resin layer 31 on one surface of the plastic film 23 to form a resin composition layer, followed by heating. The resin composition layer is cured by curing other than radiation irradiation such as solvent removal or thermal curing. When making the thickness of the radiation-curable resin layer 31 thicker, the radiation-curable resin layer formed in the same manner on the release-treated surface of the release liner can also be superimposed on the plastic film 23 formed above. Laminate on the radiation curable resin layer.

形成上述放射線硬化性樹脂層之樹脂組成物只要不損害上述放射線硬化性樹脂層之放射線硬化性,則可為任一形態。例如,黏著劑組成物可為乳液型、溶劑型(溶液型)、熱熔融型(熱熔型)等。其中,就容易獲得生產性優異之黏著劑層之方面而言,較佳為溶劑型。 The resin composition forming the radiation curable resin layer may be in any form as long as it does not impair the radiation curability of the radiation curable resin layer. For example, the adhesive composition may be an emulsion type, a solvent type (solution type), a heat-melt type (hot-melt type), or the like. Among them, a solvent type is preferable at the point that it is easy to obtain an adhesive layer excellent in productivity.

另一方面,於另外準備之剝離襯墊4之剝離處理面上形成放射線非硬化性黏著劑層32。上述放射線非硬化性黏著劑層32可藉由如下方式製作,即,將形成放射線非硬化性黏著劑層32之黏著劑組成物塗佈於剝離襯墊4之剝離處理面上形成黏著劑組成物層,其後進行利用加熱所進行之脫溶劑或硬化,使該黏著劑組成物層固化。然後,於上述放射線硬化性樹脂層上積層上述放射線非硬化性黏著劑層。如此,可獲得具有[塑膠膜23/放射線硬化性樹脂層31/放射線非硬化性黏著劑層32/剝離襯墊4]之構成之積層體。On the other hand, a radiation non-curable adhesive layer 32 is formed on the release-treated surface of the release liner 4 prepared separately. The radiation non-curable adhesive layer 32 can be produced by applying the adhesive composition forming the radiation non-curable adhesive layer 32 on the release-treated surface of the release liner 4 to form the adhesive composition layer, followed by desolvation or hardening by heating to cure the adhesive composition layer. Then, the above-mentioned radiation non-curable adhesive layer is laminated on the above-mentioned radiation-curable resin layer. In this way, a laminate having a composition of [plastic film 23/radiation curable resin layer 31/radiation non-curable adhesive layer 32/release liner 4] can be obtained.

形成上述放射線非硬化性黏著劑層之黏著劑組成物可為任一形態。例如,黏著劑組成物可為乳液型、溶劑型(溶液型)、活性能量線硬化型、熱熔融型(熱熔型)等。其中,就容易獲得生產性優異之黏著劑層之方面而言,較佳為溶劑型、活性能量線硬化型之黏著劑組成物。The adhesive composition forming the above radiation non-curable adhesive layer may be in any form. For example, the adhesive composition may be an emulsion type, a solvent type (solution type), an active energy ray hardening type, a heat-melt type (hot-melt type), or the like. Among them, solvent-based and active energy ray-curable adhesive compositions are preferable in terms of easily obtaining an adhesive layer having excellent productivity.

另一方面,製作光學膜21與黏著劑層22之積層體。具體而言,例如,可藉由如下方式製作,即,於另外準備之剝離襯墊之剝離處理面上以與放射線非硬化性黏著劑層32相同之方式形成黏著劑層22,其次將光學膜21貼合於黏著劑層22上。然後,剝離上述剝離襯墊,使黏著劑層22露出,與上述積層體之塑膠膜23之未形成有放射線硬化性樹脂層31之表面貼合。作為上述樹脂組成物或黏著劑組成物之塗佈手法,例如可採用公知或慣用之塗佈手法,可例舉:輥塗佈、絲網塗佈、凹版塗佈等。又,各種層之積層可使用公知之輥或貼合機來進行。如此,可製作圖1所示之光半導體元件密封用片材1。On the other hand, the laminated body of the optical film 21 and the adhesive layer 22 was produced. Specifically, for example, it can be produced by forming the adhesive layer 22 in the same manner as the radiation non-curable adhesive layer 32 on the release-treated surface of a separately prepared release liner, and then attaching the optical film 21 is pasted on the adhesive layer 22 . Then, the release liner was peeled off to expose the adhesive layer 22, and it was bonded to the surface of the plastic film 23 of the above-mentioned laminate on which the radiation-curable resin layer 31 was not formed. As the coating method of the above-mentioned resin composition or adhesive composition, for example, known or usual coating methods can be used, and examples thereof include roll coating, screen coating, gravure coating, and the like. Moreover, lamination|stacking of various layers can be performed using a well-known roll or laminating machine. In this way, the sheet|seat 1 for optical-semiconductor element sealing shown in FIG. 1 can be produced.

再者,本發明之光半導體元件密封用片材不限定於上述方法,於基材部包含複層之情形時,可藉由如下方式製作,即,首先,製作基材部,適當組合放射線硬化性樹脂層及放射線非硬化性黏著劑層並依次積層於基材部,使放射線非硬化性黏著劑層位於表面。Furthermore, the optical-semiconductor element sealing sheet of the present invention is not limited to the above-mentioned method, and when the substrate part includes a multilayer, it can be produced by the following method, that is, firstly, the substrate part is produced, and radiation curing is appropriately combined A resin layer and a non-radiation-curable adhesive layer are sequentially laminated on the substrate so that the non-radiation-curable adhesive layer is located on the surface.

使用本發明之光半導體裝置密封用片材,將放射線非硬化性黏著劑層貼合於配置有光半導體元件之基板上,並藉由密封部密封光半導體元件,藉此可獲得光半導體裝置。具體而言,首先,自本發明之光半導體元件密封用片材將剝離襯墊剝離使放射線非硬化性黏著劑層露出。然後,將放射線非硬化性黏著劑層面貼合於光學構件之配置有光半導體元件之基板面,上述光學構件具備基板、及配置於上述基板上之光半導體元件(較佳為複數個光半導體元件),上述放射線非硬化性黏著劑層面為本發明之光半導體元件密封用片材之露出面,且於上述光學構件具備複數個光半導體元件之情形時,進而配置為將放射線非硬化性黏著劑層填充於複數個光半導體元件間之間隙,一次性密封複數個光半導體元件。如此,可使用本發明之光半導體裝置密封用片材來密封光半導體元件。又,亦可藉由使用本發明之光半導體裝置密封用片材,於減壓環境下或一面加壓一面貼合而密封光半導體元件。作為此種方法,例如可例舉:日本專利特開2016-29689號公報或日本專利特開平6-97268所揭示之方法。Using the sheet for encapsulating optical semiconductor devices of the present invention, the radiation non-curable adhesive layer is bonded to the substrate on which the optical semiconductor elements are arranged, and the optical semiconductor elements are sealed by the sealing portion, whereby an optical semiconductor device can be obtained. Specifically, first, the release liner is peeled from the sheet for optical-semiconductor element sealing of this invention, and a radiation non-hardening adhesive layer is exposed. Then, the radiation non-hardening adhesive layer is attached to the substrate surface of the optical member on which the optical semiconductor element is arranged. The optical member has a substrate and an optical semiconductor element (preferably a plurality of optical semiconductor elements) arranged on the substrate. ), the above-mentioned non-radiation-curable adhesive layer is the exposed surface of the optical-semiconductor element sealing sheet of the present invention, and when the above-mentioned optical member has a plurality of optical-semiconductor elements, the radiation-non-curable adhesive layer is further arranged to The layer fills the gaps between a plurality of optical semiconductor elements, and seals a plurality of optical semiconductor elements at one time. In this way, an optical semiconductor element can be sealed using the sheet|seat for optical semiconductor device sealing of this invention. Moreover, the optical-semiconductor element can also be sealed by using the sheet|seat for optical-semiconductor device sealing of this invention, and bonding under reduced pressure environment or pressurization. Such a method may, for example, be the method disclosed in JP-A-2016-29689 or JP-A-6-97268.

[光半導體裝置] 可使用本發明之光半導體元件密封用片材來製作光半導體裝置。使用本發明之光半導體元件密封用片材所製造之光半導體裝置具備基板、配置於上述基板上之光半導體元件、及對上述光半導體元件進行密封之本發明之光半導體元件密封用片材硬化而成之硬化物。上述硬化物係藉由放射線照射使本發明之光半導體元件密封用片材硬化而成之硬化物,具體而言,本發明之光半導體元件密封用片材中之放射線硬化性樹脂層具備藉由放射線照射而硬化之硬化密封層。 [Optical semiconductor device] An optical semiconductor device can be produced using the sheet|seat for optical-semiconductor element sealing of this invention. An optical semiconductor device manufactured using the optical semiconductor element sealing sheet of the present invention includes a substrate, an optical semiconductor element disposed on the substrate, and the optical semiconductor element sealing sheet of the present invention that seals the optical semiconductor element is cured become hardened. The above-mentioned cured product is a cured product obtained by curing the sheet for sealing optical semiconductor elements of the present invention by irradiation with radiation. Specifically, the radiation curable resin layer in the sheet for sealing optical semiconductor elements of the present invention has Hardened sealing layer hardened by radiation exposure.

作為上述光半導體元件,例如可例舉:藍色發光二極體、綠色發光二極體、紅色發光二極體、紫外線發光二極體等發光二極體(LED)。As said optical semiconductor element, light emitting diodes (LED), such as a blue light emitting diode, a green light emitting diode, a red light emitting diode, and an ultraviolet light emitting diode, are mentioned, for example.

於上述光半導體裝置中,本發明之光半導體元件密封用片材由於當將光半導體元件設為凸部,將複數個光半導體元件間之間隙設為凹部時,對凹凸之追隨性優異,使光半導體元件之埋入性優異,故而較佳為一次性密封複數個光半導體元件。In the above-mentioned optical semiconductor device, the optical semiconductor element sealing sheet of the present invention is excellent in conformability to unevenness when the optical semiconductor element is formed as a convex portion and the gap between a plurality of optical semiconductor elements is formed as a concave portion. Since the embedding property of the optical semiconductor element is excellent, it is preferable to seal a plurality of optical semiconductor elements at once.

圖2表示使用圖1所示之光半導體元件密封用片材1之光半導體裝置之一實施方式。圖2所示之光半導體裝置10具備基板5、配置於基板5之一個面之複數個光半導體元件6、及對光半導體元件6進行密封之光半導體元件密封用片材之硬化物1'。光半導體元件密封用片材之硬化物1'係自光半導體元件密封用片材1將剝離襯墊4剝離,且形成有藉由放射線照射使放射線硬化性樹脂層31硬化所形成之硬化密封層31'者。複數個光半導體元件6被密封部一次性密封。密封部中之放射線非硬化性黏著劑層32追隨於由複數個光半導體元件6所形成之凹凸形狀而密接於光半導體元件6及基板5,將光半導體元件6埋入。FIG. 2 shows one embodiment of an optical semiconductor device using the sheet 1 for sealing an optical semiconductor element shown in FIG. 1 . An optical semiconductor device 10 shown in FIG. 2 includes a substrate 5 , a plurality of optical semiconductor elements 6 arranged on one surface of the substrate 5 , and a cured product 1 ′ of an optical semiconductor element sealing sheet that seals the optical semiconductor element 6 . The cured product 1' of the sheet for sealing optical semiconductor elements is formed by peeling the release liner 4 from the sheet 1 for sealing optical semiconductor elements, and forming a cured sealing layer formed by curing the radiation curable resin layer 31 by irradiation with radiation. 31'. The plurality of optical semiconductor elements 6 are sealed at once by the sealing portion. The radiation non-curable adhesive layer 32 in the sealing portion follows the concave-convex shape formed by the plurality of optical semiconductor elements 6 and is in close contact with the optical semiconductor elements 6 and the substrate 5 to embed the optical semiconductor elements 6 .

再者,於圖2所示之光半導體裝置10中,光半導體元件6完全埋入至放射線非硬化性黏著劑層32內被密封,且藉由硬化密封層31'被間接密封。上述光半導體裝置不限定於此種態樣,亦可為如下態樣,即,光半導體元件6之一部分自放射線非硬化性黏著劑層32突出,該一部分埋入至硬化密封層31'內,光半導體元件6被放射線非硬化性黏著劑層32及硬化密封層31'完全埋入並密封。Furthermore, in the optical semiconductor device 10 shown in FIG. 2 , the optical semiconductor element 6 is completely embedded and sealed in the radiation non-curable adhesive layer 32 , and indirectly sealed by the hardened sealing layer 31 ′. The above-mentioned optical semiconductor device is not limited to this aspect, and may be an aspect in which a part of the optical semiconductor element 6 protrudes from the radiation non-curable adhesive layer 32, and this part is embedded in the cured sealing layer 31', The optical semiconductor element 6 is completely embedded and sealed by the radiation non-curable adhesive layer 32 and the cured sealing layer 31 ′.

如上所述,上述光半導體裝置藉由放射線非硬化性黏著劑層及作為放射線硬化性樹脂層之硬化物之硬化密封層而密封光半導體元件。因此,光半導體元件與放射線非硬化性黏著劑層密接,由於光半導體元件之密封性優異,且硬化密封層之側面之黏著性較低,故而當在拼貼之狀態下,將鄰接之光半導體裝置彼此拉開時,可容易拉開,不易引起片材缺損或鄰接之光半導體裝置之片材附著。As described above, the above optical semiconductor device seals the optical semiconductor element with the radiation non-curable adhesive layer and the cured sealing layer which is the cured product of the radiation curable resin layer. Therefore, the optical semiconductor element is in close contact with the radiation non-hardening adhesive layer. Since the optical semiconductor element has excellent sealing performance, and the adhesiveness of the side surface of the hardened sealing layer is low, when the adjacent optical semiconductor element is pasted together, When the devices are pulled apart from each other, they can be easily pulled apart, and it is difficult to cause sheet defects or adhesion of adjacent optical semiconductor device sheets.

上述光半導體裝置可為各個光半導體裝置拼貼而成者。即,上述光半導體裝置可為複數個光半導體裝置在平面方向上配置成磚塊狀而成者。The above-mentioned optical semiconductor device may be a collage of individual optical semiconductor devices. That is, the above-mentioned optical semiconductor device may be one in which a plurality of optical semiconductor devices are arranged in a brick shape in the planar direction.

圖3表示配置有複數個光半導體裝置所製作之光半導體裝置之一實施方式。圖3所示之光半導體裝置20係複數個光半導體裝置10以縱方向上4個、橫方向上4個合計16個在平面方向上配置(拼貼)成磚塊狀而成者。於鄰接之2個光半導體裝置10間之交界20a,光半導體裝置10彼此雖鄰接,但可容易拉開該等,且不易引起密封部側面之缺損,或上述密封部側面中缺損之樹脂不易自鄰接之光半導體裝置之一個附著於另一個。FIG. 3 shows an embodiment of an optical semiconductor device manufactured by arranging a plurality of optical semiconductor devices. The photo-semiconductor device 20 shown in FIG. 3 is a plurality of photo-semiconductor devices 10 arranged (collaged) in a brick shape in the planar direction, with 4 in the vertical direction and 4 in the horizontal direction, a total of 16. At the junction 20a between two adjacent optical semiconductor devices 10, although the optical semiconductor devices 10 are adjacent to each other, they can be easily pulled apart, and it is not easy to cause defects on the side of the sealing part, or the missing resin on the side of the sealing part is not easy to come out. One of the adjacent photo-semiconductor devices is attached to the other.

上述光半導體裝置較佳為液晶畫面之背光裝置,尤佳為整個面正下方型之背光裝置。又,可藉由將上述背光裝置與顯示面板進行組合,而成為圖像顯示裝置。於上述光半導體裝置為液晶畫面之背光裝置之情形時,光半導體元件為LED元件。例如,於上述背光裝置中,於上述基板上積層有用於向各LED元件發送發光控制信號之金屬配線層。發出紅色(R)、綠色(G)、藍色(B)之各色之光之各LED元件經由金屬配線層而交替配列於顯示面板之基板上。金屬配線層可藉由銅等金屬而形成,反射各LED元件之發光,使圖像之視認性降低。又,由RGB之各色之各LED元件所發出之光發生混色,對比度降低。The above-mentioned optical semiconductor device is preferably a backlight device for a liquid crystal display, more preferably a backlight device of the whole-surface-direct type. In addition, an image display device can be obtained by combining the above-mentioned backlight device with a display panel. When the above-mentioned optical semiconductor device is a backlight device of a liquid crystal display, the optical semiconductor element is an LED element. For example, in the above-mentioned backlight device, a metal wiring layer for sending a light emission control signal to each LED element is laminated on the above-mentioned substrate. LED elements that emit red (R), green (G), and blue (B) lights are alternately arranged on the substrate of the display panel through metal wiring layers. The metal wiring layer can be formed of metal such as copper, which reflects the light emitted by each LED element and reduces the visibility of the image. In addition, the light emitted from each LED element of each color of RGB is mixed, and the contrast ratio is lowered.

又,上述光半導體裝置較佳為自發光型顯示裝置。又,可藉由將上述自發光型顯示裝置與視需要之顯示面板進行組合而成為圖像顯示裝置。於上述光半導體裝置為自發光型顯示裝置之情形時,光半導體元件為LED元件。作為上述自發光型顯示裝置,可例舉:有機電致發光(有機EL)顯示裝置等。例如,於上述自發光型顯示裝置中,於上述基板上積層有用於對各LED元件發送發光控制信號之金屬配線層。發出紅色(R)、綠色(G)、藍色(B)之各色之光之各LED元件經由金屬配線層而交替配列於基板上。金屬配線層可藉由銅等金屬而形成,調整各LED元件之發光程度來顯示各色。In addition, the above-mentioned optical semiconductor device is preferably a self-luminous display device. Furthermore, an image display device can be obtained by combining the above-mentioned self-luminous display device with an optional display panel. When the above-mentioned optical semiconductor device is a self-luminous display device, the optical semiconductor element is an LED element. As said self-luminous display device, an organic electroluminescence (organic EL) display device etc. are mentioned, for example. For example, in the above-mentioned self-luminous display device, a metal wiring layer for sending a light-emission control signal to each LED element is laminated on the above-mentioned substrate. LED elements that emit light of each color of red (R), green (G), and blue (B) are alternately arranged on the substrate through metal wiring layers. The metal wiring layer can be formed of metals such as copper, and adjusts the luminescence level of each LED element to display various colors.

本發明之光半導體元件密封用片材可用於彎曲使用之光半導體裝置,例如,具有可彎曲之圖像顯示裝置(軟性顯示器)(特別是可摺疊之圖像顯示裝置(可摺疊顯示器))之光半導體裝置。具體而言,可用於可摺疊之背光裝置及可摺疊之自發光型顯示裝置等。The sheet for encapsulating optical semiconductor elements of the present invention can be used for optical semiconductor devices that are bent and used, for example, those with a bendable image display device (flexible display) (especially a foldable image display device (foldable display)) Optical semiconductor device. Specifically, it can be used in a foldable backlight device, a foldable self-luminous display device, and the like.

由於本發明之光半導體元件密封用片材之光半導體元件之埋入性優異,故而可較佳用於如下任一情形:上述光半導體裝置為小型LED顯示裝置之情形及上述光半導體裝置為微型LED顯示裝置之情形。Since the photo-semiconductor element sealing sheet of the present invention has excellent embedding properties of the photo-semiconductor element, it can be preferably used in any of the following cases: the case where the above-mentioned photo-semiconductor device is a small LED display device and the above-mentioned photo-semiconductor device is a miniature The situation of LED display device.

[光半導體裝置之製造方法] 上述光半導體裝置例如可藉由如下製造方法而製造,上述製造方法至少具備對積層體進行切割而獲得光半導體裝置之切割步驟,上述積層體具備基板、配置於上述基板上之光半導體元件、及對上述光半導體元件進行密封之本發明之光半導體元件密封用片材之上述放射線硬化性樹脂層硬化而成之硬化物。上述硬化物係藉由放射線照射使本發明之光半導體元件密封用片材硬化而成之硬化物,具體而言,本發明之光半導體元件密封用片材中之放射線硬化性樹脂層具備藉由放射線照射而硬化之硬化密封層。 [Manufacturing method of optical semiconductor device] The above-mentioned optical semiconductor device can be manufactured, for example, by a manufacturing method comprising at least a dicing step of obtaining an optical semiconductor device by dicing a laminate comprising a substrate, an optical-semiconductor element arranged on the substrate, and A cured product obtained by curing the above-mentioned radiation-curable resin layer of the sheet for sealing an optical-semiconductor element of the present invention that seals the above-mentioned optical-semiconductor element. The above-mentioned cured product is a cured product obtained by curing the sheet for sealing optical semiconductor elements of the present invention by irradiation with radiation. Specifically, the radiation curable resin layer in the sheet for sealing optical semiconductor elements of the present invention has Hardened sealing layer hardened by radiation exposure.

當對放射線硬化性樹脂層進行放射線照射使之硬化時,於存在氧之側面中硬化受到抑制,硬化容易變得不充分。針對於此,根據具備上述切割步驟之上述製造方法,對於具備包含藉由放射線照射使上述放射線硬化性樹脂層硬化所得之硬化密封層之光半導體元件密封用片材之硬化物的積層體,藉由切除上述切割步驟中硬化不充分之側端部,可獲得因充分硬化而使密接性降低之區域露出至側面之光半導體裝置。由於以此方式所製造之光半導體裝置之硬化後之放射線硬化性樹脂層側面之密接性充分降低,故而當在拼貼狀態下將鄰接之光半導體裝置彼此拉開時,不易引起片材缺損或鄰接之光半導體裝置之片材附著。When the radiation-curable resin layer is irradiated with radiation to be cured, hardening is suppressed on the side where oxygen exists, and hardening tends to become insufficient. On the other hand, according to the above-mentioned production method having the above-mentioned cutting step, for the laminate having the cured product of the optical-semiconductor element sealing sheet including the hardened sealing layer obtained by curing the above-mentioned radiation-curable resin layer by irradiation with radiation, by By cutting off the insufficiently hardened side end portion in the above-mentioned dicing step, an optical semiconductor device can be obtained in which the region where the adhesiveness has been reduced due to sufficient hardening is exposed to the side surface. Since the adhesiveness of the cured side of the radiation-curable resin layer of the photo-semiconductor device manufactured in this way is sufficiently reduced, when the adjacent photo-semiconductor devices are pulled apart from each other in the collage state, it is difficult to cause sheet defects or damage. Adjacent sheets of optical semiconductor devices are attached.

上述製造方法亦可進而具備對積層體照射放射線以使上述放射線硬化性樹脂層硬化而獲得上述硬化物之放射線照射步驟,上述積層體具備上述基板、配置於上述基板上之光半導體元件、及對上述光半導體元件進行密封之上述光半導體元件密封用片材。The above-mentioned production method may further include a radiation irradiation step of irradiating radiation to the laminated body including the above-mentioned substrate, an optical semiconductor element arranged on the above-mentioned substrate, and The said optical-semiconductor element sealing sheet which seals the said optical-semiconductor element.

上述製造方法亦可在上述放射線照射步驟之前具備密封步驟:將上述光半導體元件密封用片材與設置於上述基板上之上述光半導體元件貼合,並藉由上述密封部對上述光半導體元件進行密封。The aforementioned production method may include, before the aforementioned radiation irradiation step, a sealing step of bonding the aforementioned optical-semiconductor element sealing sheet to the aforementioned optical-semiconductor element provided on the aforementioned substrate, and sealing the aforementioned optical-semiconductor element through the aforementioned sealing portion. seal.

又,上述製造方法亦可進而具備拼貼步驟:將上述切割步驟所獲得之複數個光半導體裝置以在平面方向上接觸之方式進行排列。以下,適當參酌圖2所示之光半導體裝置10及圖3所示之光半導體裝置20之製造方法進行說明。In addition, the above-mentioned manufacturing method may further include a tiling step of arranging the plurality of optical semiconductor devices obtained in the above-mentioned dicing step so as to be in contact with each other in the planar direction. Hereinafter, the method of manufacturing the optical semiconductor device 10 shown in FIG. 2 and the optical semiconductor device 20 shown in FIG. 3 will be described as appropriate.

(密封步驟) 於上述密封步驟中,將本發明之光半導體元件密封用片材與配置有光半導體元件之基板貼合,並藉由密封部對光半導體元件進行密封。於上述密封步驟中,具體而言,如圖4所示,將剝離了剝離襯墊4之光半導體元件密封用片材1之放射線非硬化性黏著劑層32以與基板5之配置有光半導體元件6之面相對之方式進行配置,將光半導體元件密封用片材1貼合於基板5之配置有光半導體元件6之面,如圖5所示,將光半導體元件6埋入至密封部3中。如圖4所示,用於貼合之基板5相較圖2所示之光半導體裝置10中之基板5,在平面方向上延伸更廣,於基板5之端部附近未配置有光半導體元件6。又,貼合之光半導體元件密封用片材1相較用於貼合之基板5,在平面方向上延伸更廣。即,密封步驟中所貼合之光半導體元件密封用片材1之與基板5相對之面之面積大於密封步驟中所貼合之基板5之與光半導體元件密封用片材1相對之面之面積。其原因在於,於光半導體元件密封用片材1及基板5之積層體中光半導體裝置所使用之區域中,光半導體元件密封用片材1及基板5在之後之放射線照射步驟中得到充分硬化,其等之有可能硬化不充分之端部附近會在之後之切割步驟中被切割去除。 (sealing step) In the said sealing process, the sheet|seat for optical-semiconductor element sealing of this invention is bonded to the board|substrate in which the optical-semiconductor element was arrange|positioned, and the optical-semiconductor element is sealed by the sealing part. In the above-mentioned sealing step, specifically, as shown in FIG. 4 , the radiation non-curable adhesive layer 32 of the sheet 1 for sealing an optical semiconductor element from which the release liner 4 has been peeled off is placed on the substrate 5 on which the optical semiconductor element is arranged. The faces of the elements 6 are arranged facing each other, and the optical semiconductor element sealing sheet 1 is bonded to the surface of the substrate 5 on which the optical semiconductor elements 6 are arranged, and the optical semiconductor elements 6 are embedded in the sealing part as shown in FIG. 5 3 in. As shown in FIG. 4 , the substrate 5 for lamination extends wider in the plane direction than the substrate 5 in the optical semiconductor device 10 shown in FIG. 2 , and no optical semiconductor elements are arranged near the end of the substrate 5. 6. Moreover, the sheet|seat 1 for optical-semiconductor element sealing to be bonded is extended in the planar direction rather than the board|substrate 5 used for bonding. That is, the area of the surface of the sheet 1 for sealing optical-semiconductor elements bonded in the sealing step that faces the substrate 5 is larger than the area of the surface of the substrate 5 bonded in the sealing step that faces the sheet 1 for sealing optical-semiconductor elements. area. The reason for this is that, in the laminated body of the optical semiconductor element sealing sheet 1 and the substrate 5, the optical semiconductor element sealing sheet 1 and the substrate 5 are sufficiently cured in the subsequent radiation irradiation step in the region where the optical semiconductor device is used. , and the vicinity of the ends that may be insufficiently hardened will be cut and removed in a subsequent cutting step.

上述貼合時之溫度例如為自室溫至110℃之範圍內。又,上述貼合時,亦可進行減壓或加壓。藉由減壓或加壓,可抑制在密封部與基板或光半導體元件之間形成空隙。又,於上述密封步驟中,較佳為在減壓下貼合光半導體元件密封用片材,其後進行加壓。進行減壓時之壓力例如為1~100 Pa,減壓時間例如為5~600秒。又,進行加壓時之壓力例如為0.05~0.5 MPa,減壓時間例如為5~600秒。The temperature at the time of the above lamination is, for example, within a range from room temperature to 110°C. In addition, at the time of the above-mentioned bonding, decompression or pressurization may be performed. By reducing or increasing the pressure, it is possible to suppress the formation of voids between the sealing portion and the substrate or the optical semiconductor element. Moreover, in the said sealing process, it is preferable to bond the sheet|seat for optical-semiconductor element sealing together under reduced pressure, and to pressurize after that. The pressure at the time of decompression is, for example, 1 to 100 Pa, and the decompression time is, for example, 5 to 600 seconds. In addition, the pressure at the time of pressurization is, for example, 0.05 to 0.5 MPa, and the decompression time is, for example, 5 to 600 seconds.

(放射線照射步驟) 於上述放射線照射步驟中,對於在配置有上述光半導體元件之上述基板上貼合上述光半導體元件密封用片材而成之積層體(例如,上述密封步驟所獲得之積層體),照射放射線,使上述放射線硬化性樹脂層硬化。於上述放射線照射步驟中,具體而言,如圖6所示,可使放射線硬化性樹脂層31硬化而形成硬化密封層31',獲得光半導體元件密封用片材1之硬化物1'。作為上述放射線,如上所述,可例舉:電子束、紫外線、α射線、β射線、γ射線、X射線等。其中,較佳為紫外線。放射線照射時之溫度例如為自室溫至100℃之範圍內,照射時間例如為1分鐘~1小時。 (Radiation Exposure Procedure) In the above-mentioned radiation irradiation step, radiation is irradiated to the laminate obtained by bonding the above-mentioned optical-semiconductor element sealing sheet on the above-mentioned substrate on which the above-mentioned optical-semiconductor element is arranged (for example, the laminate obtained in the above-mentioned sealing step), The aforementioned radiation curable resin layer is cured. In the above-mentioned radiation irradiation step, specifically, as shown in FIG. 6 , the radiation-curable resin layer 31 is cured to form a cured sealing layer 31 ′ to obtain a cured product 1 ′ of the sheet 1 for sealing an optical semiconductor element. As the radiation, electron beams, ultraviolet rays, α-rays, β-rays, γ-rays, X-rays and the like are mentioned above. Among them, ultraviolet rays are preferred. The temperature during radiation irradiation is, for example, in the range from room temperature to 100° C., and the irradiation time is, for example, 1 minute to 1 hour.

(切割步驟) 於上述切割步驟中,對積層體(例如,經由上述放射線照射步驟之積層體)進行切割,上述積層體具備基板、配置於上述基板上之光半導體元件、及對上述光半導體元件進行密封之本發明之光半導體元件密封用片材之硬化物。此處,於經由過切割步驟之積層體中,光半導體元件密封用片材之硬化物1'及基板5如上所述相較最終所獲得之光半導體裝置10在平面方向上延伸更廣。然後,於上述切割步驟中,切割並去除光半導體元件密封用片材之硬化物及基板之側端部。具體而言,於圖7所示之鏈線之位置進行切割,去除側端部。上述切割可藉由公知或慣用之方法進行,例如可藉由使用切割刀片之方法、雷射照射而進行。如此,例如,可製造圖2所示之光半導體裝置10。 (cutting step) In the dicing step, a laminate (for example, the laminate passed through the radiation irradiation step) is cut, and the laminate includes a substrate, an optical semiconductor element arranged on the substrate, and a substrate for sealing the optical semiconductor element. The cured product of the invention's sealing sheet for optical semiconductor devices. Here, in the laminated body which passed through the dicing process, the hardened|cured material 1' of the sheet|seat for optical-semiconductor element sealing, and the board|substrate 5 are extended in the plane direction more widely than the optical-semiconductor device 10 finally obtained as mentioned above. Then, in the above-mentioned cutting step, the cured product of the sheet for optical-semiconductor element sealing and the side end portion of the substrate are cut and removed. Specifically, cutting is performed at the position of the chain line shown in FIG. 7 to remove the side end. The above-mentioned cutting can be performed by a known or customary method, for example, a method using a dicing blade or laser irradiation. In this way, for example, the optical semiconductor device 10 shown in FIG. 2 can be manufactured.

此處,於上述製造方法中,重要的是,例如在藉由經由上述放射線照射步驟等所呈現之放射線硬化性樹脂層硬化之狀態下進行切割。於在放射線硬化性樹脂層未硬化之狀態下進行切割之情形時,當想要在切割後拉開光半導體元件密封用片材之側端部並將其去除時,存在產生如下不良情況之情形:所要去除之側端部及餘留之光半導體裝置中之放射線硬化性樹脂層彼此之黏著性較高,兩者密接並相互吸引,導致餘留之光半導體裝置中之放射線硬化性樹脂層產生缺損,所要去除之側端部之放射線硬化性樹脂層之一部分轉印並附著於餘留之光半導體裝置。針對於此,藉由具備在放射線硬化性樹脂層硬化之狀態下進行切割之上述切割步驟,而使放射線硬化性樹脂層硬化成為硬化密封層,因此切割部分之側面之密接性較低,可抑制上述不良情況之產生。Here, in the above-mentioned manufacturing method, it is important to perform dicing in a state where the radiation-curable resin layer presented by passing through the above-mentioned radiation irradiation step and the like is cured, for example. When dicing is performed in an uncured state of the radiation-curable resin layer, when it is attempted to remove the side end of the optical-semiconductor element sealing sheet after dicing, the following disadvantages may occur : The side end to be removed and the radiation-curable resin layer in the remaining optical semiconductor device have high adhesion to each other, and the two are closely connected and attracted to each other, resulting in the generation of radiation-curable resin layer in the remaining optical semiconductor device. In the defect, a part of the radiation curable resin layer at the side end to be removed is transferred and attached to the remaining optical semiconductor device. On the other hand, by having the cutting step in which the radiation-curable resin layer is cured, the radiation-curable resin layer is cured to form a hardened sealing layer, so that the side surface of the cut portion has low adhesion and can suppress Occurrence of the above adverse conditions.

又,當對放射線硬化性樹脂層進行放射線照射使之硬化時,於存在氧之側面中硬化受到抑制,硬化容易變得不充分。針對於此,根據具備上述切割步驟之上述製造方法,藉由在上述放射線硬化性樹脂層硬化之狀態下,切除上述切割步驟中硬化不充分之端部,可獲得側面經充分硬化而使密接性降低之光半導體裝置。由於以此方式所製造之光半導體裝置在放射線硬化性樹脂層之硬化後,側面之密接性得到充分降低,故而當在拼貼狀態下將鄰接之光半導體裝置彼此拉開時,不易引起片材缺損或鄰接之光半導體裝置之片材附著。另一方面,於不具備上述切割步驟之情形時,由於拼貼時,硬化不充分之側面與鄰接之光半導體裝置接觸,故而當想要將鄰接之光半導體裝置彼此拉開時,容易產生如下不良情況:側面彼此密接並相互吸引,導致一個光半導體裝置中之放射線硬化性樹脂層產生缺損,或另一個光半導體裝置中之放射線硬化性樹脂層之一部分轉印並附著於一個光半導體裝置。Also, when the radiation-curable resin layer is irradiated with radiation to be cured, hardening is suppressed on the side where oxygen exists, and hardening tends to be insufficient. In view of this, according to the above-mentioned manufacturing method having the above-mentioned cutting step, by cutting off the end portion that is insufficiently hardened in the above-mentioned cutting step in the state where the above-mentioned radiation curable resin layer is hardened, it is possible to obtain a side surface that is sufficiently hardened so that the adhesiveness can be obtained. Lower light semiconductor device. Since the adhesiveness of the side surface of the photo-semiconductor device manufactured in this way is sufficiently reduced after the radiation-curable resin layer is cured, when the adjacent photo-semiconductor devices are pulled apart from each other in a collage state, it is not easy to cause sheet damage. Defective or adjacent photo-semiconductor device sheet adhesion. On the other hand, in the absence of the above-mentioned dicing step, since the insufficiently hardened side surface is in contact with the adjacent optical semiconductor device during lamination, when trying to pull the adjacent optical semiconductor devices apart, the following is likely to occur: Disadvantages: The side surfaces are closely attached to each other and attract each other, resulting in a defect in the radiation curable resin layer in one optical semiconductor device, or part of the radiation curable resin layer in the other optical semiconductor device is transferred and attached to one optical semiconductor device.

(拼貼步驟) 於上述拼貼步驟中,將上述切割步驟所獲得之複數個光半導體裝置以在平面方向上接觸之方式排列,進行拼貼。如此,例如可製造圖3所示之光半導體裝置20。拼貼後獲得之光半導體裝置之光半導體元件之密封性優異,並且,當將鄰接之光半導體裝置彼此拉開時,不易引起片材缺損或鄰接之光半導體裝置之片材附著。 [實施例] (collage step) In the above-mentioned bonding step, the plurality of optical semiconductor devices obtained in the above-mentioned cutting step are arranged so as to be in contact with each other in the planar direction, and bonded together. In this way, for example, the optical semiconductor device 20 shown in FIG. 3 can be manufactured. The photo-semiconductor elements of the photo-semiconductor devices obtained after bonding are excellent in sealing properties, and when the adjacent photo-semiconductor devices are pulled apart, it is difficult to cause sheet defects or adhesion of the sheets of adjacent photo-semiconductor devices. [Example]

以下,例舉實施例更加詳細地說明本發明,但本發明並不受該等實施例任何限定。Hereinafter, the present invention will be described in more detail with examples given, but the present invention is not limited by these examples.

實施例1 <TAC膜/黏合劑黏著劑層> 將作為單體成分之丙烯酸2-乙基己酯(2EHA)69.7質量份、丙烯酸2-甲氧基乙酯(MEA)10質量份、丙烯酸2-羥基乙酯(HEA)13質量份、N-乙烯基-2-吡咯啶酮(NVP)6質量份、N-羥乙基丙烯醯胺(HEAA)1.3質量份、作為聚合起始劑之2,2'-偶氮二異丁腈0.1質量份、及作為聚合溶劑之乙酸乙酯200質量份投入至可分離式燒瓶,一面導入氮氣,一面攪拌1小時。如此,去除聚合系內之氧後,升溫至63℃,反應10小時,加入乙酸乙酯,獲得固形物成分濃度30質量%之丙烯酸系聚合物溶液。相對於上述丙烯酸系聚合物100質量份,加入作為交聯劑之異氰酸酯系交聯劑(商品名「Takenate D110N」,三井化學股份有限公司製造)0.2質量份、作為矽烷偶合劑之γ-縮水甘油氧基丙基三甲氧基矽烷(商品名「KBM-403」,信越化學工業股份有限公司製造)0.15質量份、作為交聯促進劑之使環氧丙烷與乙二胺加成而成之多元醇(商品名「EDP-300」,ADEKA股份有限公司製造)0.2質量份,製備黏著劑組成物(溶液)。其次,以乾燥後之厚度成為25 μm之方式將上述黏著劑組成物(溶液)塗佈於剝離襯墊(隔離件)(商品名「MRF38」,Mitsubishi Chemical股份有限公司製造)之剝離處理面上,於常壓下,於60℃下加熱乾燥1分鐘,並於155℃下加熱乾燥1分鐘,獲得作為黏合劑黏著劑層之雙面黏著片。並且,對於三乙醯纖維素(TAC)膜(商品名「DSR3-LR」,大日本印刷股份有限公司製造,總厚45 μm,防眩/抗反射處理)之非處理面,使用手動輥,以不會殘留氣泡之方式貼合黏合劑黏著劑層之黏著面。如此,製作具有[TAC膜/黏合劑黏著劑層/剝離襯墊]之構成之積層體。 Example 1 <TAC film/adhesive adhesive layer> 69.7 parts by mass of 2-ethylhexyl acrylate (2EHA), 10 parts by mass of 2-methoxyethyl acrylate (MEA), 13 parts by mass of 2-hydroxyethyl acrylate (HEA), N- 6 parts by mass of vinyl-2-pyrrolidone (NVP), 1.3 parts by mass of N-hydroxyethylacrylamide (HEAA), 0.1 part by mass of 2,2'-azobisisobutyronitrile as a polymerization initiator , and 200 parts by mass of ethyl acetate as a polymerization solvent were charged into a separable flask, and stirred for 1 hour while introducing nitrogen gas. In this way, after removing oxygen in the polymerization system, the temperature was raised to 63° C., and the reaction was carried out for 10 hours, and ethyl acetate was added to obtain an acrylic polymer solution with a solid content concentration of 30% by mass. With respect to 100 parts by mass of the above-mentioned acrylic polymer, 0.2 parts by mass of an isocyanate-based crosslinking agent (trade name "Takenate D110N", manufactured by Mitsui Chemicals Co., Ltd.) as a crosslinking agent, and γ-glycidol as a silane coupling agent were added Oxypropyltrimethoxysilane (trade name "KBM-403", manufactured by Shin-Etsu Chemical Co., Ltd.) 0.15 parts by mass, a polyol obtained by adding propylene oxide and ethylenediamine as a crosslinking accelerator (trade name "EDP-300", manufactured by ADEKA Co., Ltd.) 0.2 parts by mass to prepare an adhesive composition (solution). Next, the above-mentioned adhesive composition (solution) was applied to the release-treated surface of a release liner (separator) (trade name "MRF38", manufactured by Mitsubishi Chemical Co., Ltd.) so that the thickness after drying became 25 μm. , under normal pressure, heat and dry at 60°C for 1 minute, and heat and dry at 155°C for 1 minute to obtain a double-sided adhesive sheet as an adhesive layer. Also, for the non-treated surface of a triacetyl cellulose (TAC) film (trade name "DSR3-LR", manufactured by Dainippon Printing Co., Ltd., total thickness 45 μm, anti-glare/anti-reflective treatment), a manual roller was used, Attach the adhesive surface of the adhesive adhesive layer in such a way that no air bubbles remain. In this way, a laminate having a configuration of [TAC film/adhesive adhesive layer/release liner] was produced.

<PET膜/紫外線硬化性黏著劑層/放射線非硬化性黏著劑層> (紫外線硬化性黏著劑層) 向1 L圓底可分離式燒瓶裝備有可分離式罩、分液漏斗、溫度計、氮氣導入管、李比希冷卻器、真空密封、攪拌棒、攪拌葉片之聚合用實驗裝置中,投入丙烯酸丁酯(BA)189.77質量份、丙烯酸環己酯(CHA)38.04質量份、丙烯酸2-羥基乙酯(HEA)85.93質量份、作為聚合起始劑之2,2'-偶氮二異丁腈0.94質量份、及作為聚合溶劑之甲基乙基酮379.31質量份,一面進行攪拌,一面於常溫下進行6小時氮氣置換。其後,在通入氮氣之條件下一面攪拌,一面在65℃下保持4小時使之聚合並在75℃下保持2小時使之聚合,獲得樹脂溶液。 其次,將所獲得之樹脂溶液冷卻至室溫。其後,於上述樹脂溶液中加入作為具有聚合性碳-碳雙鍵之化合物之甲基丙烯酸2-異氰酸酯基乙酯(商品名「Karenz MOI」,昭和電工股份有限公司製造)57.43質量份。進而添加二月桂酸二丁基錫(IV)(富士膠片和光純藥股份有限公司製造)0.29質量份,於空氣環境下,於50℃下攪拌24小時,獲得基礎聚合物。 相對於所獲得之基礎聚合物之固形物成分100質量份,將異氰酸酯化合物(商品名「Coronate L」,東曹股份有限公司製造,固形物成分75質量%)1.5質量份、及2,2-二甲氧基-1,2-二苯基-1-酮(商品名「omnirad 651」,IGM Resins Italia Srl公司製造)1質量份加以混合。使用甲苯作為稀釋溶劑,以固形物成分率成為20~40質量%之方式進行調整,獲得黏著劑溶液(1)。 <PET film/ultraviolet curable adhesive layer/radiation non-curable adhesive layer> (ultraviolet curable adhesive layer) Put butyl acrylate ( 189.77 parts by mass of BA), 38.04 parts by mass of cyclohexyl acrylate (CHA), 85.93 parts by mass of 2-hydroxyethyl acrylate (HEA), 0.94 parts by mass of 2,2'-azobisisobutyronitrile as a polymerization initiator , and 379.31 parts by mass of methyl ethyl ketone as a polymerization solvent, while stirring, nitrogen replacement was performed at room temperature for 6 hours. Thereafter, the mixture was kept at 65° C. for 4 hours for polymerization and kept at 75° C. for 2 hours while stirring while blowing nitrogen gas, to obtain a resin solution. Next, the obtained resin solution was cooled to room temperature. Thereafter, 57.43 parts by mass of 2-isocyanatoethyl methacrylate (trade name "Karenz MOI", manufactured by Showa Denko Co., Ltd.) as a compound having a polymerizable carbon-carbon double bond was added to the resin solution. Further, 0.29 parts by mass of dibutyltin(IV) dilaurate (manufactured by Fujifilm Wako Pure Chemical Industries, Ltd.) was added, and stirred at 50° C. for 24 hours in an air atmosphere to obtain a base polymer. With respect to 100 parts by mass of the solid content of the obtained base polymer, 1.5 parts by mass of an isocyanate compound (trade name "Coronate L", manufactured by Tosoh Co., Ltd., 75 mass % of solid content), and 2,2- 1 part by mass of dimethoxy-1,2-diphenyl-1-one (trade name "omnirad 651", manufactured by IGM Resins Italia Srl) was mixed. Using toluene as a diluting solvent, it adjusted so that the solid content rate might become 20-40 mass %, and obtained the adhesive agent solution (1).

以乾燥後之厚度成為112.5 μm之方式將該黏著劑溶液(1)塗佈於PET膜(商品名「T912E75(UE80-)」,Mitsubishi Chemical股份有限公司製造,厚度75 μm)之處理面上,於常壓下,於50℃下加熱乾燥1分鐘,並於125℃下加熱乾燥5分鐘,形成紫外線硬化性黏著劑層(1)。另一方面,以乾燥後之厚度成為112.5 μm之方式將上述所獲得之黏著劑溶液(1)塗佈於剝離襯墊(商品名「MRF38」,Mitsubishi Chemical股份有限公司製造)之剝離處理面上,於常壓下,於50℃下加熱乾燥1分鐘,並於125℃下加熱乾燥5分鐘,形成紫外線硬化性黏著劑層(2)。This adhesive solution (1) was applied to the treated surface of a PET film (trade name "T912E75(UE80-)", manufactured by Mitsubishi Chemical Co., Ltd., thickness 75 μm) so that the thickness after drying became 112.5 μm. Under normal pressure, heat and dry at 50° C. for 1 minute, and heat and dry at 125° C. for 5 minutes to form an ultraviolet curable adhesive layer (1). On the other hand, the adhesive solution (1) obtained above was applied to the release-treated surface of a release liner (trade name "MRF38", manufactured by Mitsubishi Chemical Co., Ltd.) so that the thickness after drying became 112.5 μm. , under normal pressure, heat and dry at 50° C. for 1 minute, and heat and dry at 125° C. for 5 minutes to form an ultraviolet curable adhesive layer (2).

然後,使用手動輥,以不會殘留氣泡之方式將形成於PET膜上之紫外線硬化性黏著劑層(1)與形成於剝離襯墊上之紫外線硬化性黏著劑層(2)之黏著劑層面彼此貼合,形成1個紫外線硬化性黏著劑層。其後,將剝離襯墊剝離。如此,製作具有[PET膜/紫外線硬化性黏著劑層]之構成之積層體。Then, use a manual roller to separate the UV-curable adhesive layer (1) formed on the PET film and the adhesive layer of the UV-curable adhesive layer (2) formed on the release liner so that no air bubbles remain. They are attached to each other to form a UV-curable adhesive layer. Thereafter, the release liner was peeled off. Thus, the laminated body which has the structure of [PET film/ultraviolet curable adhesive layer] was produced.

(放射線非硬化性黏著劑層) 向1 L圓底可分離式燒瓶裝備有可分離式罩、分液漏斗、溫度計、氮氣導入管、李比希冷卻器、真空密封、攪拌棒、攪拌葉片之聚合用實驗裝置中,投入丙烯酸丁酯(BA)189.77質量份、丙烯酸環己酯(CHA)38.04質量份、丙烯酸2-羥基乙酯(HEA)85.93質量份、作為聚合起始劑之2,2'-偶氮二異丁腈0.94質量份、及作為聚合溶劑之甲基乙基酮379.31質量份,一面進行攪拌,一面於常溫下進行6小時氮氣置換。其後,在通入氮氣之條件下一面攪拌,一面在65℃下保持4小時使之聚合並在75℃下保持2小時使之聚合,獲得樹脂溶液。 將相對於基礎聚合物之固形物成分100質量份為1.5質量份之異氰酸酯化合物(商品名「Coronate L」,東曹股份有限公司製造,固形物成分75質量%)混合於所獲得之樹脂溶液中。使用甲苯作為稀釋溶劑,以固形物成分率成為20~40質量%之方式進行調整,獲得黏著劑溶液(2)。 (Radiation non-hardening adhesive layer) Put butyl acrylate ( 189.77 parts by mass of BA), 38.04 parts by mass of cyclohexyl acrylate (CHA), 85.93 parts by mass of 2-hydroxyethyl acrylate (HEA), 0.94 parts by mass of 2,2'-azobisisobutyronitrile as a polymerization initiator , and 379.31 parts by mass of methyl ethyl ketone as a polymerization solvent, while stirring, nitrogen replacement was performed at room temperature for 6 hours. Thereafter, the mixture was kept at 65° C. for 4 hours for polymerization and kept at 75° C. for 2 hours while stirring while blowing nitrogen gas, to obtain a resin solution. 1.5 parts by mass of an isocyanate compound (trade name "Coronate L", manufactured by Tosoh Co., Ltd., solid content 75% by mass) based on 100 parts by mass of the solid content of the base polymer was mixed with the obtained resin solution . Using toluene as a diluting solvent, it adjusted so that the solid content rate might become 20-40 mass %, and obtained the adhesive agent solution (2).

以乾燥後之厚度成為25 μm之方式將該黏著劑溶液(2)塗佈於剝離襯墊(商品名「MRF38」,Mitsubishi Chemical股份有限公司製造)之剝離處理面上,於常壓下,於125℃下加熱乾燥2分鐘,形成放射線非硬化性黏著劑層。The adhesive solution (2) was applied to the release surface of a release liner (trade name "MRF38", manufactured by Mitsubishi Chemical Co., Ltd.) so that the thickness after drying became 25 μm, and the adhesive solution (2) was placed under normal pressure on Heat and dry at 125°C for 2 minutes to form a radiation non-hardening adhesive layer.

(PET膜/紫外線硬化性黏著劑層/放射線非硬化性黏著劑層) 使用手動輥,以不會殘留氣泡之方式將上述放射線非硬化性黏著劑層貼合於具有[PET膜/紫外線硬化性黏著劑層]之構成之積層體之紫外線硬化性黏著劑層面。如此,製作具有[PET膜/紫外線硬化性黏著劑層/放射線非硬化性黏著劑層/剝離襯墊]之構成之積層體。 (PET film/ultraviolet curable adhesive layer/radiation non-curable adhesive layer) Using a manual roller, the above-mentioned radiation non-curable adhesive layer was attached to the ultraviolet curable adhesive layer of the laminate having the composition of [PET film/ultraviolet curable adhesive layer] so that no air bubbles remained. In this manner, a laminate having a configuration of [PET film/ultraviolet curable adhesive layer/radiation non-curable adhesive layer/release liner] was produced.

<光半導體元件密封用片材> 使用手動輥,以不會殘留氣泡之方式將自具有[TAC膜/黏合劑黏著劑層/剝離襯墊]之構成之積層體剝離了剝離襯墊所露出之黏合劑黏著劑層面貼合於具有[PET膜/紫外線硬化性黏著劑層/放射線非硬化性黏著劑層/剝離襯墊]之構成之積層體之PET膜面。其後,於50℃下進行48小時老化,製作具有[TAC膜/黏合劑黏著劑層/PET膜/紫外線硬化性黏著劑層/放射線非硬化性黏著劑層/剝離襯墊]之層構成的實施例1之光半導體元件密封用片材。 <Sheet for optical semiconductor device sealing> Using a manual roller, peel off the adhesive adhesive layer exposed by the release liner from the laminate having the composition of [TAC film/adhesive adhesive layer/release liner] so that no air bubbles remain. The PET film surface of the laminate composed of [PET film/ultraviolet curable adhesive layer/radiation non-curable adhesive layer/release liner]. Thereafter, aging was carried out at 50°C for 48 hours to produce a layer consisting of [TAC film/adhesive adhesive layer/PET film/ultraviolet curable adhesive layer/radiation non-curable adhesive layer/release liner] The sheet for encapsulating an optical semiconductor element of Example 1.

實施例2 將紫外線硬化性黏著劑層(1)之厚度設為100 μm,將紫外線硬化性黏著劑層(2)之厚度設為100 μm(紫外線硬化性黏著劑層之總厚度:200 μm),將放射線非硬化性黏著劑層之厚度設為50 μm,除此以外,以與實施例1相同之方式製作實施例2之光半導體元件密封用片材。 Example 2 The thickness of the UV curable adhesive layer (1) was set to 100 μm, the thickness of the UV curable adhesive layer (2) was set to 100 μm (total thickness of the UV curable adhesive layer: 200 μm), and the radiation Except having set the thickness of the non-hardening adhesive layer to 50 micrometers, it carried out similarly to Example 1, and produced the sheet|seat for optical-semiconductor element sealing of Example 2.

實施例3 <PET膜/紫外線硬化性黏著劑層/放射線非硬化性黏著劑層> (紫外線硬化性黏著劑層) 以乾燥後之厚度成為125 μm之方式將實施例1所製作之黏著劑溶液(1)塗佈於PET膜(商品名「T912E75(UE80-)」,Mitsubishi Chemical股份有限公司製造,厚度75 μm)之處理面上,於常壓下,於50℃下加熱乾燥1分鐘,並於125℃下加熱乾燥5分鐘,形成紫外線硬化性黏著劑層。 Example 3 <PET film/ultraviolet curable adhesive layer/radiation non-curable adhesive layer> (ultraviolet curable adhesive layer) The adhesive solution (1) prepared in Example 1 was applied to a PET film (trade name "T912E75(UE80-)", manufactured by Mitsubishi Chemical Co., Ltd., thickness 75 μm) so that the thickness after drying became 125 μm. On the treated surface, heat-dry at 50°C for 1 minute and at 125°C for 5 minutes under normal pressure to form a UV curable adhesive layer.

(放射線非硬化性黏著劑層) 以乾燥後之厚度成為125 μm之方式將實施例1所製作之黏著劑溶液(2)塗佈於剝離襯墊(商品名「MRF38」,Mitsubishi Chemical股份有限公司製造)之剝離處理面上,於常壓下,於50℃下加熱乾燥1分鐘,並於125℃下加熱乾燥5分鐘,形成放射線非硬化性黏著劑層。 (Radiation non-hardening adhesive layer) The adhesive solution (2) prepared in Example 1 was applied to the release-treated surface of a release liner (trade name "MRF38", manufactured by Mitsubishi Chemical Co., Ltd.) so that the thickness after drying became 125 μm. Under normal pressure, heat and dry at 50° C. for 1 minute, and heat and dry at 125° C. for 5 minutes to form a radiation non-hardening adhesive layer.

<光半導體元件密封用片材> 使用上述所獲得之放射線非硬化性黏著劑層及紫外線硬化性黏著劑層,除此以外,以與實施例1相同之方式製作實施例3之光半導體元件密封用片材。 <Sheet for optical semiconductor device sealing> The sheet|seat for optical-semiconductor element sealing of Example 3 was produced in the same manner as Example 1 except having used the radiation non-curable adhesive layer and ultraviolet curable adhesive layer obtained above.

實施例4 以乾燥後之厚度成為125 μm之方式將實施例1所製作之黏著劑溶液(1)塗佈於PET膜(商品名「T912E75(UE80-)」,Mitsubishi Chemical股份有限公司製造,厚度75 μm)之處理面上,於常壓下,於50℃下加熱乾燥1分鐘,並於125℃下加熱乾燥5分鐘,形成紫外線硬化性黏著劑層(1)。另一方面,以乾燥後之厚度成為125 μm之方式將實施例1所製作之黏著劑溶液(1)塗佈於剝離襯墊(商品名「MRF38」,Mitsubishi Chemical股份有限公司製造)之剝離處理面上,於常壓下,於50℃下加熱乾燥1分鐘,並於125℃下加熱乾燥5分鐘,形成紫外線硬化性黏著劑層(2)。 然後,於上述紫外線硬化性黏著劑層(1)依次積層3層另外製作之上述紫外線硬化性黏著劑層(2),製作總厚度500 μm之紫外線硬化性黏著劑層。 Example 4 The adhesive solution (1) prepared in Example 1 was applied to a PET film (trade name "T912E75(UE80-)", manufactured by Mitsubishi Chemical Co., Ltd., thickness 75 μm) so that the thickness after drying became 125 μm. The treated surface was heated and dried at 50°C for 1 minute and at 125°C for 5 minutes under normal pressure to form an ultraviolet curable adhesive layer (1). On the other hand, peeling treatment of applying the adhesive solution (1) prepared in Example 1 to a release liner (trade name "MRF38", manufactured by Mitsubishi Chemical Co., Ltd.) so that the thickness after drying becomes 125 μm On the surface, under normal pressure, heat-dry at 50°C for 1 minute, and heat-dry at 125°C for 5 minutes to form an ultraviolet curable adhesive layer (2). Then, three layers of the separately produced above-mentioned ultraviolet-curable adhesive layer (2) were sequentially laminated on the above-mentioned ultraviolet-curable adhesive layer (1) to prepare an ultraviolet-curable adhesive layer with a total thickness of 500 μm.

以乾燥後之厚度成為5 μm之方式將實施例1所製作之黏著劑溶液(2)塗佈於剝離襯墊(商品名「MRF38」,Mitsubishi Chemical股份有限公司製造)之剝離處理面上,於常壓下,於125℃下加熱乾燥2分鐘,形成放射線非硬化性黏著劑層。The adhesive solution (2) prepared in Example 1 was applied to the release-treated surface of a release liner (trade name "MRF38", manufactured by Mitsubishi Chemical Co., Ltd.) so that the thickness after drying became 5 μm. Under normal pressure, heat and dry at 125° C. for 2 minutes to form a radiation non-hardening adhesive layer.

使用上述所獲得之放射線非硬化性黏著劑層及紫外線硬化性黏著劑層,除此以外,以與實施例1相同之方式製作實施例4之光半導體元件密封用片材。The sheet|seat for optical-semiconductor element sealing of Example 4 was produced in the same manner as Example 1 except having used the radiation non-curable adhesive layer and ultraviolet curable adhesive layer obtained above.

實施例5 以乾燥後之厚度成為25 μm之方式將實施例1所製作之黏著劑溶液(1) 塗佈於PET膜(商品名「T912E75(UE80-)」,Mitsubishi Chemical股份有限公司製造,厚度75 μm)之處理面上,於常壓下,於50℃下加熱乾燥1分鐘,並於125℃下加熱乾燥2分鐘,形成紫外線硬化性黏著劑層。 Example 5 The adhesive solution (1) prepared in Example 1 was applied to a PET film (trade name "T912E75(UE80-)", manufactured by Mitsubishi Chemical Co., Ltd., thickness 75 μm) so that the thickness after drying became 25 μm. The treated surface was heated and dried at 50°C for 1 minute and at 125°C for 2 minutes under normal pressure to form an ultraviolet curable adhesive layer.

以乾燥後之厚度成為112.5 μm之方式將實施例1所製作之黏著劑溶液(2)塗佈於剝離襯墊(商品名「MRF38」,Mitsubishi Chemical股份有限公司製造)之剝離處理面上,於常壓下,於50℃下加熱乾燥1分鐘,並於125℃下加熱乾燥5分鐘,形成放射線非硬化性黏著劑層(1)。The adhesive solution (2) prepared in Example 1 was applied to the release-treated surface of a release liner (trade name "MRF38", manufactured by Mitsubishi Chemical Co., Ltd.) so that the thickness after drying became 112.5 μm. Under normal pressure, heat and dry at 50° C. for 1 minute, and then heat and dry at 125° C. for 5 minutes to form a radiation non-hardening adhesive layer (1).

然後,使用手動輥,以不會殘留氣泡之方式將形成於PET膜上之紫外線硬化性黏著劑層及形成於剝離襯墊上之放射線非硬化性黏著劑層(1)之黏著劑層面彼此貼合,其後,將剝離襯墊剝離。如此,製作具有[PET膜/紫外線硬化性黏著劑層/放射線非硬化性黏著劑層(1)]之構成之積層體。Then, using a manual roller, the adhesive layers of the ultraviolet curable adhesive layer formed on the PET film and the radiation non-curable adhesive layer (1) formed on the release liner were attached to each other in such a manner that air bubbles would not remain. and then peel off the release liner. In this manner, a laminate having a composition of [PET film/ultraviolet curable adhesive layer/radiation non-curable adhesive layer (1)] was produced.

另一方面,以乾燥後之厚度成為112.5 μm之方式將實施例1所製作之黏著劑溶液(2)塗佈於剝離襯墊(商品名「MRF38」,Mitsubishi Chemical股份有限公司製造)之剝離處理面上,於常壓下,於50℃下加熱乾燥1分鐘,並於125℃下加熱乾燥5分鐘,形成放射線非硬化性黏著劑層(2)。On the other hand, peeling treatment of applying the adhesive solution (2) prepared in Example 1 to a release liner (trade name "MRF38", manufactured by Mitsubishi Chemical Co., Ltd.) so that the thickness after drying becomes 112.5 μm On the surface, under normal pressure, heat-dry at 50°C for 1 minute and at 125°C for 5 minutes to form a radiation non-hardening adhesive layer (2).

然後,使用手動輥,以不會殘留氣泡之方式將具有[PET膜/紫外線硬化性黏著劑層/放射線非硬化性黏著劑層(1)]之構成之積層體中之放射線非硬化性黏著劑層(1)與形成於剝離襯墊上之放射線非硬化性黏著劑層(2)之黏著劑層面彼此貼合,形成1個放射線非硬化性黏著劑層。如此,製作具有[PET膜/紫外線硬化性黏著劑層/放射線非硬化性黏著劑層/剝離襯墊]之構成之積層體。Then, the non-radiation-curable adhesive in the laminate having the composition of [PET film/ultraviolet-curable adhesive layer/radiation-non-curable adhesive layer (1)] was placed using a hand roller so that air bubbles would not remain. The layer (1) and the adhesive layer of the radiation non-curable adhesive layer (2) formed on the release liner are attached to each other to form a radiation non-curable adhesive layer. In this manner, a laminate having a configuration of [PET film/ultraviolet curable adhesive layer/radiation non-curable adhesive layer/release liner] was produced.

使用手動輥,以不會殘留氣泡之方式將自實施例1所製作之具有[TAC膜/黏合劑黏著劑層/剝離襯墊]之構成之積層體剝離了剝離襯墊所露出之黏合劑黏著劑層面貼合於具有[PET膜/紫外線硬化性黏著劑層/放射線非硬化性黏著劑層/剝離襯墊]之構成之積層體之PET膜面。其後,於50℃下進行48小時老化,製作具有[TAC膜/黏合劑黏著劑層/PET膜/紫外線硬化性黏著劑層/放射線非硬化性黏著劑層/剝離襯墊]之層構成的實施例5之光半導體元件密封用片材。Using a manual roller, peel off the adhesive exposed on the release liner from the laminate having the composition of [TAC film/adhesive adhesive layer/release liner] produced in Example 1, and adhere without leaving air bubbles. The adhesive layer is bonded to the PET film surface of a laminate having a composition of [PET film/ultraviolet curable adhesive layer/radiation non-curable adhesive layer/release liner]. Thereafter, aging was carried out at 50°C for 48 hours to produce a layer consisting of [TAC film/adhesive adhesive layer/PET film/ultraviolet curable adhesive layer/radiation non-curable adhesive layer/release liner] The sheet for encapsulating an optical semiconductor element of Example 5.

比較例1 以乾燥後之厚度成為125 μm之方式將實施例1所製作之黏著劑溶液(2)塗佈於PET膜(商品名「T912E75(UE80-)」,Mitsubishi Chemical股份有限公司製造,厚度75 μm)之處理面上,於常壓下,於50℃下加熱乾燥1分鐘,並於125℃下加熱乾燥5分鐘,形成放射線非硬化性黏著劑層(1)。另一方面,以乾燥後之厚度成為125 μm之方式將實施例1所製作之黏著劑溶液(2)塗佈於剝離襯墊(商品名「MRF38」,Mitsubishi Chemical股份有限公司製造)之剝離處理面上,於常壓下,於50℃下加熱乾燥1分鐘,並於125℃下加熱乾燥5分鐘,形成放射線非硬化性黏著劑層(2)。 Comparative example 1 The adhesive solution (2) prepared in Example 1 was applied to a PET film (trade name "T912E75(UE80-)", manufactured by Mitsubishi Chemical Co., Ltd., thickness 75 μm) so that the thickness after drying became 125 μm. The treated surface was heated and dried at 50°C for 1 minute and at 125°C for 5 minutes under normal pressure to form a radiation non-hardening adhesive layer (1). On the other hand, peeling treatment of applying the adhesive solution (2) produced in Example 1 to a release liner (trade name "MRF38", manufactured by Mitsubishi Chemical Co., Ltd.) so that the thickness after drying becomes 125 μm On the surface, under normal pressure, heat-dry at 50°C for 1 minute and at 125°C for 5 minutes to form a radiation non-hardening adhesive layer (2).

然後,使用手動輥,以不會殘留氣泡之方式將形成於PET膜上之放射線非硬化性黏著劑層(1)與形成於剝離襯墊上之放射線非硬化性黏著劑層(2)之黏著劑層面彼此貼合,形成1個放射線非硬化性黏著劑層。如此,製作具有[PET膜/放射線非硬化性黏著劑層/剝離襯墊]之構成之積層體。Then, using a hand roller, adhere the radiation non-curable adhesive layer (1) formed on the PET film to the radiation non-curable adhesive layer (2) formed on the release liner so that air bubbles do not remain. The adhesive layers are attached to each other to form a radiation non-hardening adhesive layer. In this way, a laminate having a configuration of [PET film/radiation non-curable adhesive layer/release liner] was produced.

使用手動輥,以不會殘留氣泡之方式將自實施例1所製作之具有[TAC膜/黏合劑黏著劑層/剝離襯墊]之構成之積層體剝離了剝離襯墊所露出之黏合劑黏著劑層面貼合於具有[PET膜/放射線非硬化性黏著劑層/剝離襯墊]之構成之積層體之PET膜面。其後,於50℃下進行48小時老化,製作具有[TAC膜/黏合劑黏著劑層/PET膜/放射線非硬化性黏著劑層/剝離襯墊]之層構成的比較例1之光半導體元件密封用片材。Using a manual roller, peel off the adhesive exposed on the release liner from the laminate having the composition of [TAC film/adhesive adhesive layer/release liner] produced in Example 1, and adhere without leaving air bubbles. The agent layer was bonded to the PET film surface of the laminate having the composition of [PET film/radiation non-hardening adhesive layer/release liner]. Thereafter, aging was carried out at 50° C. for 48 hours, and an optical semiconductor element of Comparative Example 1 having a layer composition of [TAC film/adhesive adhesive layer/PET film/radiation non-curable adhesive layer/release liner] was produced. Sealing sheet.

比較例2 以乾燥後之厚度成為125 μm之方式將實施例1所製作之黏著劑溶液(1)塗佈於PET膜(商品名「T912E75(UE80-)」,Mitsubishi Chemical股份有限公司製造,厚度75 μm)之處理面上,於常壓下,於50℃下加熱乾燥1分鐘,並於125℃下加熱乾燥5分鐘,形成紫外線硬化性黏著劑層(1)。另一方面,以乾燥後之厚度成為125 μm之方式將實施例1所製作之黏著劑溶液(1)塗佈於剝離襯墊(商品名「MRF38」,Mitsubishi Chemical股份有限公司製造)之剝離處理面上,於常壓下,於50℃下加熱乾燥1分鐘,並於125℃下加熱乾燥5分鐘,形成紫外線硬化性黏著劑層(2)。 Comparative example 2 The adhesive solution (1) prepared in Example 1 was applied to a PET film (trade name "T912E75(UE80-)", manufactured by Mitsubishi Chemical Co., Ltd., thickness 75 μm) so that the thickness after drying became 125 μm. The treated surface was heated and dried at 50°C for 1 minute and at 125°C for 5 minutes under normal pressure to form an ultraviolet curable adhesive layer (1). On the other hand, peeling treatment of applying the adhesive solution (1) prepared in Example 1 to a release liner (trade name "MRF38", manufactured by Mitsubishi Chemical Co., Ltd.) so that the thickness after drying becomes 125 μm On the surface, under normal pressure, heat-dry at 50°C for 1 minute, and heat-dry at 125°C for 5 minutes to form an ultraviolet curable adhesive layer (2).

然後,使用手動輥,以不會殘留氣泡之方式將形成於PET膜上之紫外線硬化性黏著劑層(1)與形成於剝離襯墊上之紫外線硬化性黏著劑層(2)之黏著劑層面彼此貼合,形成1個紫外線硬化性黏著劑層。如此,製作具有[PET膜/紫外線硬化性黏著劑層/剝離襯墊]之構成之積層體。Then, use a manual roller to separate the UV-curable adhesive layer (1) formed on the PET film and the adhesive layer of the UV-curable adhesive layer (2) formed on the release liner so that no air bubbles remain. They are attached to each other to form a UV-curable adhesive layer. Thus, the laminated body which has the structure of [PET film/ultraviolet curable adhesive layer/release liner] was produced.

使用手動輥,以不會殘留氣泡之方式將自實施例1所製作之具有[TAC膜/黏合劑黏著劑層/剝離襯墊]之構成之積層體剝離了剝離襯墊所露出之黏合劑黏著劑層面貼合於具有[PET膜/紫外線硬化性黏著劑層/剝離襯墊]之構成之積層體之PET膜面。其後,於50℃下進行48小時老化,製作具有[TAC膜/黏合劑黏著劑層/PET膜/紫外線硬化性黏著劑層/剝離襯墊]之層構成的比較例2之光半導體元件密封用片材。Using a manual roller, peel off the adhesive exposed on the release liner from the laminate having the composition of [TAC film/adhesive adhesive layer/release liner] produced in Example 1, and adhere without leaving air bubbles. The adhesive layer was bonded to the PET film surface of the laminate having the composition of [PET film/ultraviolet curable adhesive layer/release liner]. Thereafter, aging was carried out at 50° C. for 48 hours, and the photo-semiconductor element sealing of Comparative Example 2 having a layer composition of [TAC film/adhesive adhesive layer/PET film/ultraviolet curable adhesive layer/release liner] was produced. Use sheet.

比較例3 以乾燥後之厚度成為25 μm之方式將實施例1所製作之黏著劑溶液(2)塗佈於PET膜(商品名「T912E75(UE80-)」,Mitsubishi Chemical股份有限公司製造,厚度75 μm)之處理面上,於常壓下,於50℃下加熱乾燥1分鐘,並於125℃下加熱乾燥2分鐘,形成放射線非硬化性黏著劑層。 Comparative example 3 The adhesive solution (2) prepared in Example 1 was applied to a PET film (trade name "T912E75(UE80-)", manufactured by Mitsubishi Chemical Co., Ltd., thickness 75 μm) so that the thickness after drying became 25 μm. The treated surface was heated and dried at 50°C for 1 minute and at 125°C for 2 minutes under normal pressure to form a radiation non-hardening adhesive layer.

以乾燥後之厚度成為112.5 μm之方式將實施例1所製作之黏著劑溶液(1)塗佈於剝離襯墊(商品名「MRF38」,Mitsubishi Chemical股份有限公司製造)之剝離處理面上,於常壓下,於50℃下加熱乾燥1分鐘,並於125℃下加熱乾燥5分鐘,形成紫外線硬化性黏著劑層(1)。The adhesive solution (1) prepared in Example 1 was applied to the release-treated surface of a release liner (trade name "MRF38", manufactured by Mitsubishi Chemical Co., Ltd.) so that the thickness after drying became 112.5 μm. Under normal pressure, heat and dry at 50° C. for 1 minute, and heat and dry at 125° C. for 5 minutes to form an ultraviolet curable adhesive layer (1).

然後,使用手動輥,以不會殘留氣泡之方式將形成於PET膜上之放射線非硬化性黏著劑層及形成於剝離襯墊上之紫外線硬化性黏著劑層(1)之黏著劑層面彼此貼合,其後,將剝離襯墊剝離。如此,製作具有[PET膜/放射線非硬化性黏著劑層/紫外線硬化性黏著劑層(1)]之構成之積層體。Then, using a manual roller, the adhesive layers of the radiation non-curable adhesive layer formed on the PET film and the ultraviolet curable adhesive layer (1) formed on the release liner were attached to each other in such a manner that air bubbles would not remain. and then peel off the release liner. In this manner, a laminate having a constitution of [PET film/radiation non-curable adhesive layer/ultraviolet curable adhesive layer (1)] was produced.

另一方面,以乾燥後之厚度成為112.5 μm之方式將實施例1所製作之黏著劑溶液(1)塗佈於剝離襯墊(商品名「MRF38」,Mitsubishi Chemical股份有限公司製造)之剝離處理面上,於常壓下,於50℃下加熱乾燥1分鐘,並於125℃下加熱乾燥5分鐘,形成紫外線硬化性黏著劑層(2)。On the other hand, peeling treatment of applying the adhesive solution (1) prepared in Example 1 to a release liner (trade name "MRF38", manufactured by Mitsubishi Chemical Co., Ltd.) so that the thickness after drying becomes 112.5 μm On the surface, under normal pressure, heat-dry at 50°C for 1 minute, and heat-dry at 125°C for 5 minutes to form an ultraviolet curable adhesive layer (2).

然後,使用手動輥,以不會殘留氣泡之方式將具有[PET膜/放射線非硬化性黏著劑層/紫外線硬化性黏著劑層(1)]之構成之積層體中之紫外線硬化性黏著劑層(1)與形成於剝離襯墊上之紫外線硬化性黏著劑層(2)之黏著劑層面彼此貼合,形成1個紫外線硬化性黏著劑層。如此,製作具有[PET膜/放射線非硬化性黏著劑層/紫外線硬化性黏著劑層/剝離襯墊]之構成之積層體。Then, using a hand roller, place the ultraviolet curable adhesive layer in the laminate having the composition of [PET film/radiation non-curable adhesive layer/ultraviolet curable adhesive layer (1)] so that no air bubbles remain. (1) The adhesive layers of the ultraviolet curable adhesive layer (2) formed on the release liner are attached to each other to form one ultraviolet curable adhesive layer. In this manner, a laminate having a configuration of [PET film/radiation non-curable adhesive layer/ultraviolet curable adhesive layer/release liner] was produced.

使用手動輥,以不會殘留氣泡之方式將自實施例1所製作之具有[TAC膜/黏合劑黏著劑層/剝離襯墊]之構成之積層體剝離了剝離襯墊所露出之黏合劑黏著劑層面貼合於具有[PET膜/放射線非硬化性黏著劑層/紫外線硬化性黏著劑層/剝離襯墊]之構成之積層體之PET膜面。其後,於50℃下進行48小時老化,製作具有[TAC膜/黏合劑黏著劑層/PET膜/放射線非硬化性黏著劑層/紫外線硬化性黏著劑層/剝離襯墊]之層構成的比較例3之光半導體元件密封用片材。Using a manual roller, peel off the adhesive exposed on the release liner from the laminate having the composition of [TAC film/adhesive adhesive layer/release liner] produced in Example 1, and adhere without leaving air bubbles. The adhesive layer is bonded to the PET film surface of a laminate having a composition of [PET film/radiation non-curable adhesive layer/ultraviolet curable adhesive layer/release liner]. Thereafter, aging was carried out at 50°C for 48 hours to produce a layer consisting of [TAC film/adhesive adhesive layer/PET film/radiation non-curable adhesive layer/ultraviolet curable adhesive layer/release liner] The sheet for encapsulating an optical semiconductor element of Comparative Example 3.

<評價> 對於實施例及比較例所獲得之紫外線硬化性黏著劑層及光半導體元件密封用片材,進行以下評價。將結果示於表。 <Evaluation> The following evaluation was performed about the ultraviolet curable adhesive layer and the sheet|seat for optical-semiconductor element sealing obtained in the Example and the comparative example. The results are shown in the table.

(1)利用奈米壓痕法測得之硬度 對於實施例及比較例所分別獲得之光半導體元件密封用片材,自TAC膜側於下述紫外線照射條件下進行紫外線照射,使紫外線硬化性黏著劑層硬化。其後,於-40℃~-30℃下冷凍10~15分鐘後,於該冷凍條件下使用超薄切片機在厚度方向上進行切斷,使硬化後之紫外線硬化性黏著劑層之截面露出。然後,藉由使Pentel修正液(商品號「XEZL1-W」)凝固而將露出有截面之光半導體元件密封用片材固定於裝置所配備之金屬製平台,其後,將聚醯亞胺膜貼附於裝置之窗等進行遮光,進行評價。使用奈米壓痕儀(商品名「TriboIndenter」,HYSITRON Inc.公司製造),於下述奈米壓痕測定條件下,進行硬化後之紫外線硬化性黏著劑層之表面之奈米壓痕測定。然後,將所獲得之硬度示於表1。 <紫外線照射條件> 紫外線照射裝置:商品名「UM810」,日東精機股份有限公司製造 光源:高壓水銀燈 照射強度:50 mW/cm 2(測定機器:商品名「紫外線照度計UT-101」,牛尾電機股份有限公司製造) 照射時間:100秒 累計光量:5000 mJ/cm 2<奈米壓痕測定條件> 使用壓頭:Berkovich(三角錐型) 測定方法:單壓入測定 測定溫度:23℃ 壓入深度設定:3.0 μm 負荷速度:500 nm/s 卸載速度:500 nm/s (1) Hardness measured by nanoindentation method Regarding the sheets for sealing optical semiconductor elements obtained in Examples and Comparative Examples, ultraviolet irradiation was carried out under the following ultraviolet irradiation conditions from the TAC film side to make the ultraviolet curable The adhesive layer hardens. Thereafter, after freezing at -40°C to -30°C for 10 to 15 minutes, cut in the thickness direction using an ultramicrotome under the freezing conditions to expose the cross-section of the cured UV-curable adhesive layer . Then, by solidifying Pentel correction fluid (article number "XEZL1-W"), the photo-semiconductor element sealing sheet with the cross section exposed was fixed on the metal platform equipped with the device, and then the polyimide film Stick it on the window of the device, etc. to shield it from light, and then evaluate it. Using a nanoindenter (trade name "TriboIndenter", manufactured by HYSITRON Inc.), nanoindentation measurement was performed on the surface of the cured ultraviolet curable adhesive layer under the following nanoindentation measurement conditions. Then, the obtained hardness is shown in Table 1. <Ultraviolet irradiation conditions> Ultraviolet irradiation device: product name "UM810", manufactured by Nitto Seiki Co., Ltd. Light source: high-pressure mercury lamp Irradiation intensity: 50 mW/cm 2 (measurement device: product name "Ultraviolet Illuminance Meter UT-101", Ushio Electric Manufactured by Co., Ltd.) Irradiation time: 100 seconds Cumulative light intensity: 5000 mJ/cm 2 <Nanoindentation measurement conditions> Indenter used: Berkovich (triangular pyramid type) Measurement method: Single indentation measurement Measurement temperature: Indentation at 23°C Depth setting: 3.0 μm Loading speed: 500 nm/s Unloading speed: 500 nm/s

(2)切割評價 對於實施例及比較例所獲得之光半導體元件密封用片材,藉由手動輥將剝離了剝離襯墊所露出之黏著劑層面整個面貼合於基板(商品名「Lead Free Universal Board ICB93SGPBF」,Sunhayato股份有限公司製造)之圖案面,製作試驗樣品。再者,光半導體元件密封用片材之黏著劑層面積大於所貼合之基板之面積。貼合係在溫度22℃、濕度50%之環境下,以不會殘留氣泡之方式進行。其後,對於上述試驗樣品,自TAC膜側於下述紫外線照射條件(1)下進行紫外線照射,使紫外線硬化性黏著劑層硬化。再者,對於使用不具有紫外線硬化性黏著劑層之比較例1之光半導體元件密封用片材之試驗樣品,未進行紫外線照射。 <紫外線照射條件(1)> 紫外線照射裝置:商品名「UM810」,日東精機股份有限公司製造 光源:高壓水銀燈 照射強度:50 mW/cm 2(測定機器:商品名「紫外線照度計UT-101」,牛尾電機股份有限公司製造) 照射時間:100秒 累計光量:5000 mJ/cm 2 (2) Cutting evaluation For the optical semiconductor element sealing sheets obtained in Examples and Comparative Examples, the entire surface of the adhesive layer exposed by peeling off the release liner was bonded to the substrate (trade name "Lead Free") with a manual roller. Universal Board ICB93SGPBF", manufactured by Sunhayato Co., Ltd.), and made test samples. Furthermore, the area of the adhesive layer of the sheet for optical semiconductor element sealing is larger than the area of the substrate to be bonded. The bonding system is carried out in an environment with a temperature of 22°C and a humidity of 50%, in such a way that no air bubbles remain. Thereafter, the above test sample was irradiated with ultraviolet rays under the following ultraviolet irradiation conditions (1) from the TAC film side to harden the ultraviolet curable adhesive layer. In addition, ultraviolet irradiation was not performed about the test sample using the sheet|seat for optical-semiconductor element sealing of the comparative example 1 which does not have an ultraviolet curable adhesive layer. <Ultraviolet irradiation conditions (1)> Ultraviolet irradiation device: Product name " UM810 ", manufactured by Nitto Seiki Co., Ltd. Light source: High-pressure mercury lamp Irradiation intensity: 50 mW/cm , manufactured by Ushio Electric Co., Ltd.) Irradiation time: 100 seconds Cumulative light intensity: 5000 mJ/cm 2

紫外線照射後,將切割膠帶(商品名「NBD-5172K」,日東電工股份有限公司製造)貼附至作為試驗樣品之未貼附有光半導體元件密封用片材之側之基板表面。將用於切割之切割環貼附於切割膠帶之黏著劑面。貼附後,於遮光下及溫度22℃之環境下放置30分鐘。其後,於下述切割條件下,對於試驗樣品及切割膠帶之積層體,進行自基板之側端向內側5 mm之位置之刀片切割。 <切割條件> 切割裝置:商品名「DFD-6450」,DISCO股份有限公司製造 切割方式:單切 切割速度:30 mm/秒 切割刀片:商品名「P1A861 SDC400N75BR597」,DISCO股份有限公司製造 切割刀片轉速:30,000 rpm 刀片高度:85 μm 水量:1.5 L/分鐘 切割間隔:10 mm 1次切割之距離:試驗樣品之全長 After ultraviolet irradiation, a dicing tape (trade name "NBD-5172K", manufactured by Nitto Denko Co., Ltd.) was attached to the substrate surface of the test sample on the side where the optical-semiconductor element sealing sheet was not attached. Attach the dicing ring for dicing to the adhesive side of the dicing tape. After attaching, place it under shading and at a temperature of 22°C for 30 minutes. Thereafter, the laminate of the test sample and the dicing tape was diced with a blade at a position 5 mm inward from the side end of the substrate under the following dicing conditions. <Cutting conditions> Cutting device: Trade name "DFD-6450", manufactured by DISCO Co., Ltd. Cutting method: single cut Cutting speed: 30 mm/sec Cutting blade: Product name "P1A861 SDC400N75BR597", manufactured by DISCO Co., Ltd. Cutting blade speed: 30,000 rpm Blade height: 85 μm Water volume: 1.5 L/min Cutting interval: 10 mm The distance of 1 cut: the full length of the test sample

再者,切割所使用之刀片使用藉由以下方法進行打磨切割而得者。 將切割環、及板(商品名「DRESSER BOARD BGCA0172」,DISCO股份有限公司製造)貼附於切割膠帶(商品名「NBD-7163K」,日東電工股份有限公司製造)之黏著劑層,製作處理用之工件。其次,於下述打磨切割條件下切割所獲得之工件,獲得上述刀片切割用之刀片。 <打磨切割條件> 切割裝置:製品名「DFD-6450」,DISCO股份有限公司製造 切割方式:單切 切割速度:55 mm/秒 切割刀片:商品名「P1A861 SDC400N75BR597」(新品),DISCO股份有限公司製造 切割刀片轉速:35,000 rpm 刀片高度:500 μm 水量:1.5 L/分鐘 1次切割之距離:板之全長 切割間隔:以1 mm為單位 切割次數:100次 Furthermore, the blade used for cutting was obtained by grinding and cutting by the following method. A dicing ring and a plate (trade name "DRESSER BOARD BGCA0172", manufactured by DISCO Co., Ltd.) were attached to the adhesive layer of a dicing tape (trade name "NBD-7163K", manufactured by Nitto Denko Co., Ltd.) to prepare a handle The workpiece. Next, the obtained workpiece was cut under the grinding and cutting conditions described below to obtain the above-mentioned blade for cutting the blade. <Grinding and cutting conditions> Cutting device: product name "DFD-6450", manufactured by DISCO Co., Ltd. Cutting method: single cut Cutting speed: 55 mm/sec Cutting blade: Product name "P1A861 SDC400N75BR597" (new product), manufactured by DISCO Co., Ltd. Cutting blade speed: 35,000 rpm Blade height: 500 μm Water volume: 1.5 L/min The distance of 1 cut: the whole length of the board Cutting interval: in units of 1 mm Cutting times: 100 times

刀片切割後,於下述紫外線照射條件(2)下,自切割膠帶基材側照射紫外線,降低切割膠帶對基板之剝離強度。 <紫外線照射條件(2)> 紫外線照射裝置:商品名「UM810」,日東精機股份有限公司製造 光源:高壓水銀燈 照射強度:50 mW/cm 2(測定機器:商品名「紫外線照度計UT-101」,牛尾電機股份有限公司製造) 照射時間:10秒 累計光量:500 mJ/cm 2 After cutting with the blade, under the following ultraviolet irradiation condition (2), irradiate ultraviolet light from the substrate side of the dicing tape to reduce the peel strength of the dicing tape to the substrate. <Ultraviolet irradiation conditions ( 2 )> Ultraviolet irradiation device: Product name "UM810", manufactured by Nitto Seiki Co., Ltd. , manufactured by Ushio Electric Co., Ltd.) Irradiation time: 10 seconds Cumulative light intensity: 500 mJ/cm 2

其後,將藉由刀片切割切斷成短條狀之試驗樣品及基板之積層體自切割膠帶剝離,將切割中確認有自試驗樣品之基板剝離者評價為「B」,將未確認有剝離者評價為「A」。Thereafter, the laminate of the test sample and the substrate cut into short strips by blade dicing was peeled off from the dicing tape, and those whose peeling was confirmed from the substrate of the test sample during dicing were evaluated as "B", and those whose peeling was not confirmed were rated as "B". Rated "A".

(3)拉絲評價 將2片上述切割評價中切斷成短條狀之試驗樣品及基板之積層體自切割膠帶剝離。其次,使上述2片積層體之因切割而露出之切斷面彼此接著,於該狀態下,於溫度50℃之環境下放置24小時。其後,取出所接著之上述2片短條,於溫度22℃、濕度50%之環境下放置3小時。其後,嘗試用手將接著之切斷面彼此剝離,將未剝離者或雖剝離但明顯確認有黏著劑層之拉絲者評價為「D」,將雖剝離但略微確認有黏著劑層之拉絲者評價為「C」,將雖需要用力剝離但可於無黏著劑層之拉絲之情況下剝離者評價為「B」,將無需特別用力剝離且可於無黏著劑層之拉絲之情況下剝離者評價為「A」。 (3) Drawing evaluation The laminate of two test samples cut into short strips and the substrate in the above-mentioned dicing evaluation was peeled off from the dicing tape. Next, the cut surfaces exposed by dicing of the above-mentioned two laminates were adhered to each other, and in this state, they were left to stand in an environment at a temperature of 50° C. for 24 hours. Thereafter, the above-mentioned 2 short strips were taken out and placed in an environment with a temperature of 22° C. and a humidity of 50% for 3 hours. Afterwards, try to peel off the bonded cut surfaces by hand, and evaluate as "D" those who have not peeled off or those who have been peeled but have a string of adhesive layer clearly confirmed, and those who have peeled off but have a slight adhesive layer. Those who need to be peeled off forcefully but can be peeled off without stringing of the adhesive layer are rated as "B", those who do not need to be peeled off with special force and can be peeled off without stringing of the adhesive layer rated as "A".

[表1] (表1)    實施例1 實施例2 實施例3 實施例4 實施例5 比較例1 比較例2 比較例3 紫外線硬化性黏著劑層之厚度[μm] 225 200 125 500 25 - 250 225 放射線非硬化性黏著劑層之厚度[μm] 25 50 125 5 225 250 - 25 光半導體元件密封用片材之厚度[μm] 395 395 395 650 395 395 395 395 紫外線硬化性樹脂層之厚度之比率[%] 57 51 32 77 6 0 63 57 [紫外線硬化性樹脂層厚度/放射線非硬化性黏著劑層厚度] 9 4 1 100 0.11 0 - 9 具備紫外線硬化性樹脂層及放射線非硬化性黏著劑層 具備 具備 具備 具備 具備 不具備 不具備 具備 光半導體元件側之黏著劑層 放射線非硬化性黏著劑層 放射線非硬化性黏著劑層 放射線非硬化性黏著劑層 放射線非硬化性黏著劑層 放射線非硬化性黏著劑層 放射線非硬化性黏著劑層 紫外線硬化性黏著劑層 紫外線硬化性黏著劑層 最厚之層 紫外線硬化性黏著劑層 紫外線硬化性黏著劑層 紫外線硬化性黏著劑層 紫外線硬化性黏著劑層 放射線非硬化性黏著劑層 放射線非硬化性黏著劑層 紫外線硬化性黏著劑層 紫外線硬化性黏著劑層 利用奈米壓痕法測得之硬度[MPa] 63.9 63.9 63.9 63.9 63.9 - 63.9 63.9 切割評價 A A A A A A B B 拉絲評價 A A B A C D A A [Table 1] (Table 1) Example 1 Example 2 Example 3 Example 4 Example 5 Comparative example 1 Comparative example 2 Comparative example 3 Thickness of UV curable adhesive layer [μm] 225 200 125 500 25 - 250 225 Thickness of radiation non-hardening adhesive layer [μm] 25 50 125 5 225 250 - 25 Thickness of sheet for optical semiconductor element sealing [μm] 395 395 395 650 395 395 395 395 Ratio of thickness of ultraviolet curable resin layer [%] 57 51 32 77 6 0 63 57 [UV curable resin layer thickness/radiation non-curable adhesive layer thickness] 9 4 1 100 0.11 0 - 9 Equipped with ultraviolet curable resin layer and radiation non-curable adhesive layer have have have have have Do not have Do not have have Adhesive layer on the side of optical semiconductor element Radiation non-hardening adhesive layer Radiation non-hardening adhesive layer Radiation non-hardening adhesive layer Radiation non-hardening adhesive layer Radiation non-hardening adhesive layer Radiation non-hardening adhesive layer UV curable adhesive layer UV curable adhesive layer thickest layer UV curable adhesive layer UV curable adhesive layer UV curable adhesive layer UV curable adhesive layer Radiation non-hardening adhesive layer Radiation non-hardening adhesive layer UV curable adhesive layer UV curable adhesive layer Hardness measured by nanoindentation method [MPa] 63.9 63.9 63.9 63.9 63.9 - 63.9 63.9 cut evaluation A A A A A A B B Drawing evaluation A A B A C D. A A

如表1所示,本發明之光半導體元件密封用片材(實施例)之評價為,切割評價之結果良好,片材對光半導體元件及基板之密接性優異,光半導體元件之密封性優異。又,評價為,拉絲評價之結果良好,密封部側面之密接性較低,並且,當將鄰接之光半導體裝置彼此拉開時,不易引起片材缺損或鄰接之光半導體裝置之片材附著。As shown in Table 1, the evaluation of the sheet for sealing an optical semiconductor element of the present invention (Example) is that the result of the cutting evaluation is good, the sheet is excellent in adhesion to the optical semiconductor element and the substrate, and the sealing property of the optical semiconductor element is excellent. . In addition, it was evaluated that the result of the stringing evaluation was good, the adhesiveness of the side surface of the sealing part was low, and when the adjacent optical semiconductor devices were pulled apart, it was difficult to cause sheet chipping or adhesion of adjacent optical semiconductor devices.

另一方面,於不具有紫外線硬化性黏著劑層之情形時(比較例1),拉絲評價之結果較差。又,於不具有放射線非硬化性黏著劑層之情形時(比較例2),及於位於光半導體元件側之表面之層為紫外線硬化性黏著劑層之情形時(比較例3),切割評價之結果較差,評價為光半導體元件之密封性較差。On the other hand, in the case of not having an ultraviolet curable adhesive layer (Comparative Example 1), the result of stringiness evaluation was poor. Also, when there is no radiation non-curable adhesive layer (Comparative Example 2), and when the layer located on the surface of the optical semiconductor element side is an ultraviolet curable adhesive layer (Comparative Example 3), cutting evaluation The result was poor, and it was evaluated that the sealing property of the optical semiconductor element was poor.

1:光半導體元件密封用片材 1':光半導體元件密封用片材之硬化物 2:基材部 3:密封部 4:剝離襯墊 5:基板 6:光半導體裝置 10:光半導體裝置 20:光半導體裝置 20a:交界 21:光學膜 22:黏著劑層 23:塑膠膜 31:放射線硬化性樹脂層 31':硬化密封層 32:放射線非硬化性黏著劑層 1: Sheet for sealing optical semiconductor elements 1': Hardened sheet for sealing optical semiconductor elements 2: Substrate part 3: Sealing part 4: Peel off the liner 5: Substrate 6: Optical semiconductor device 10: Optical semiconductor device 20: Optical semiconductor device 20a: Junction 21: Optical film 22: Adhesive layer 23: plastic film 31: radiation curable resin layer 31': hardened sealant 32: Radiation non-hardening adhesive layer

圖1係本發明之一實施方式之光半導體元件密封用片材之剖視圖。 圖2係使用本發明之一實施方式之光半導體元件密封用片材的光半導體裝置之剖視圖。 圖3係表示將圖2所示之光半導體裝置拼貼而製成之光半導體裝置之一實施方式之外觀圖。 圖4表示示出光半導體裝置之製造方法之一實施方式中的密封步驟之情況之剖視圖。 圖5表示示出在圖4所示之密封步驟後所獲得之積層體之剖視圖。 圖6表示示出對圖5所示之積層體實施放射線照射步驟所獲得之積層體之剖視圖。 圖7表示示出圖6所示之積層體之切割步驟中之切割位置的剖視圖。 Fig. 1 is a cross-sectional view of a sheet for sealing an optical semiconductor element according to an embodiment of the present invention. Fig. 2 is a cross-sectional view of an optical semiconductor device using the sheet for sealing an optical semiconductor element according to one embodiment of the present invention. FIG. 3 is an external view showing an embodiment of an optical semiconductor device fabricated by laminating the optical semiconductor devices shown in FIG. 2 . FIG. 4 is a cross-sectional view showing the state of a sealing step in one embodiment of the method of manufacturing an optical semiconductor device. FIG. 5 shows a cross-sectional view showing the laminate obtained after the sealing step shown in FIG. 4 . FIG. 6 is a cross-sectional view showing a laminate obtained by irradiating the laminate shown in FIG. 5 with radiation. Fig. 7 is a cross-sectional view showing cutting positions in the cutting step of the laminate shown in Fig. 6 .

1:光半導體元件密封用片材 1: Sheet for sealing optical semiconductor elements

2:基材部 2: Substrate part

3:密封部 3: Sealing part

4:剝離襯墊 4: Peel off the liner

21:光學膜 21: Optical film

22:黏著劑層 22: Adhesive layer

23:塑膠膜 23: plastic film

31:放射線硬化性樹脂層 31: radiation curable resin layer

32:放射線非硬化性黏著劑層 32: Radiation non-hardening adhesive layer

Claims (15)

一種光半導體元件密封用片材,其係用於對配置於基板上之1個以上之光半導體元件進行密封之片材, 上述光半導體元件密封用片材具備基材部、及設置於上述基材部之一個面且用於密封上述光半導體元件之密封部;且 上述密封部具有在密封光半導體元件時位於光半導體元件側之表面之放射線非硬化性黏著劑層、及積層於上述放射線非硬化性黏著劑層之放射線硬化性樹脂層。 A sheet for sealing an optical semiconductor element, which is a sheet for sealing one or more optical semiconductor elements arranged on a substrate, The sheet for encapsulating an optical semiconductor element includes a base portion, and a sealing portion provided on one surface of the base portion and sealing the optical semiconductor element; and The sealing portion has a radiation non-curable adhesive layer positioned on the surface of the optical semiconductor element side when sealing the optical semiconductor element, and a radiation curable resin layer laminated on the radiation non-curable adhesive layer. 如請求項1之光半導體元件密封用片材,其中上述放射線硬化性樹脂層比上述放射線非硬化性黏著劑層更厚。The sheet for encapsulating an optical semiconductor element according to claim 1, wherein the radiation curable resin layer is thicker than the radiation non-curable adhesive layer. 如請求項1或2之光半導體元件密封用片材,其中上述密封部含有包含著色劑之層。The sheet for encapsulating an optical semiconductor element according to claim 1 or 2, wherein the sealing portion contains a layer containing a coloring agent. 如請求項1或2之光半導體元件密封用片材,其具備具有防眩性及/或抗反射性之層。The sheet for encapsulating an optical semiconductor element according to claim 1 or 2, which is provided with a layer having anti-glare properties and/or anti-reflection properties. 如請求項1或2之光半導體元件密封用片材,其具備將聚酯系樹脂及/或聚醯亞胺系樹脂作為主成分之層。The sheet for encapsulating an optical semiconductor element according to claim 1 or 2, which includes a layer mainly composed of a polyester resin and/or a polyimide resin. 如請求項1或2之光半導體元件密封用片材,其中在上述放射線硬化性樹脂層之硬化後截面中,在溫度23℃下利用奈米壓痕法測得之硬度為1.4 MPa以上。The sheet for encapsulating optical semiconductor elements according to claim 1 or 2, wherein the hardness of the hardened cross-section of the radiation-curable resin layer at 23° C. measured by nanoindentation method is 1.4 MPa or more. 一種光半導體裝置,其具備基板、配置於上述基板上之光半導體元件、及對上述光半導體元件進行密封之如請求項1至6中任一項之光半導體元件密封用片材之上述放射線硬化性樹脂層硬化而成之硬化物。An optical semiconductor device comprising a substrate, an optical semiconductor element disposed on the substrate, and the radiation curing of the optical semiconductor element sealing sheet according to any one of claims 1 to 6 for sealing the optical semiconductor element A hardened product formed by hardening the permanent resin layer. 如請求項7之光半導體裝置,其為液晶畫面之背光裝置。The optical semiconductor device according to Claim 7, which is a backlight device for a liquid crystal display. 一種圖像顯示裝置,其具備如請求項8之背光裝置及顯示面板。An image display device comprising a backlight device and a display panel according to Claim 8. 如請求項7之光半導體裝置,其為自發光型顯示裝置。The optical semiconductor device according to claim 7, which is a self-luminous display device. 一種圖像顯示裝置,其具備如請求項10之自發光型顯示裝置。An image display device comprising the self-luminous display device according to claim 10. 一種光半導體裝置之製造方法,其具備對積層體進行切割而獲得光半導體裝置之切割步驟,上述積層體具備基板、配置於上述基板上之光半導體元件、及對上述光半導體元件進行密封之如請求項1至6中任一項之光半導體元件密封用片材之上述放射線硬化性樹脂層硬化而成之硬化物。A method for manufacturing an optical semiconductor device, comprising a step of dicing a laminate to obtain an optical semiconductor device, wherein the laminate includes a substrate, an optical semiconductor element arranged on the substrate, and a device for sealing the optical semiconductor element. A cured product obtained by curing the radiation-curable resin layer of the sheet for encapsulating an optical semiconductor element according to any one of claims 1 to 6. 如請求項12之光半導體裝置之製造方法,其進而具備對積層體照射放射線以使上述放射線硬化性樹脂層硬化而獲得上述硬化物之放射線照射步驟,上述積層體具備上述基板、配置於上述基板上之光半導體元件、及對上述光半導體元件進行密封之上述光半導體元件密封用片材。The method for manufacturing an optical semiconductor device according to claim 12, further comprising a radiation irradiation step of irradiating the laminated body with radiation to harden the radiation-curable resin layer to obtain the cured product, the laminated body having the substrate and being disposed on the substrate The optical-semiconductor element above, and the said optical-semiconductor element sealing sheet which seals the said optical-semiconductor element. 如請求項13之光半導體裝置之製造方法,其具備密封步驟:將上述光半導體元件密封用片材與設置於上述基板上之上述光半導體元件貼合,並藉由上述密封部對上述光半導體元件進行密封;其後進行上述放射線照射步驟。The method for manufacturing an optical semiconductor device according to claim 13, which includes a sealing step: bonding the optical semiconductor element sealing sheet to the optical semiconductor element provided on the substrate, and sealing the optical semiconductor with the sealing part The element is sealed; thereafter, the above-mentioned radiation irradiation step is performed. 如請求項12之光半導體裝置之製造方法,其進而具備拼貼步驟:將上述切割步驟所獲得之複數個光半導體裝置以在平面方向上接觸之方式進行排列。The method for manufacturing an optical semiconductor device according to Claim 12, which further includes a collage step: arranging the plurality of optical semiconductor devices obtained in the cutting step so as to be in contact with each other in the planar direction.
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