TW202248137A - Particle group, composition, molded article, and particle group production method - Google Patents

Particle group, composition, molded article, and particle group production method Download PDF

Info

Publication number
TW202248137A
TW202248137A TW111118831A TW111118831A TW202248137A TW 202248137 A TW202248137 A TW 202248137A TW 111118831 A TW111118831 A TW 111118831A TW 111118831 A TW111118831 A TW 111118831A TW 202248137 A TW202248137 A TW 202248137A
Authority
TW
Taiwan
Prior art keywords
particle group
mentioned
particle
composition
requirement
Prior art date
Application number
TW111118831A
Other languages
Chinese (zh)
Inventor
佐佐木眞一
松永拓也
Original Assignee
日商住友化學股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商住友化學股份有限公司 filed Critical 日商住友化學股份有限公司
Publication of TW202248137A publication Critical patent/TW202248137A/en

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G23/00Compounds of titanium
    • C01G23/04Oxides; Hydroxides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Inorganic Chemistry (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Silicates, Zeolites, And Molecular Sieves (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)

Abstract

According to the present invention, a particle group contains a group of particles containing crystal, and meets requirement 1 and at least one of requirements 2 and 3. Requirement 1: |dA(T)/dT| is 10 ppm/DEG C or more at least one temperature T1 in the range of -200 to 1200 DEG C, where A represents (lattice constant of a-axis (minor axis) of crystal)/(lattice constant of c-axis (major axis) of crystal), and each of the lattice constants is obtained by X-ray diffraction measurement of the particle group. Requirement 2: SBET/SPSD is 4.0-20.0, where SBET represents the specific surface area of the particle group as determined by BET method. SPSD represents the specific surface area of a virtual particle group, the virtual particle group has the same volume-based particle size distribution as that of the particle group obtained by a laser diffraction scattering method, and the same true density as that of the particle group, and each virtual particle has a true sphere shape. Requirement 3: a porosity is 2.0-20.0%, where the porosity (%) = (1 - apparent density of particle group/true density of particle group) * 100.

Description

粒子群、組合物、成形體、及粒子群之製造方法Particle group, composition, molded body, and method for producing particle group

本發明係關於一種粒子群、組合物、成形體、及粒子群之製造方法。The present invention relates to a particle group, a composition, a molded body, and a method for producing the particle group.

先前,已知於固體材料中添加熱線膨脹係數之值較小之填料以降低固體材料之熱線膨脹係數。Previously, it is known to add a filler having a smaller thermal expansion coefficient to the solid material to reduce the thermal linear expansion coefficient of the solid material.

例如,專利文獻1中揭示有一種作為呈負熱線膨脹係數之填料之磷酸鎢鋯。 [先前技術文獻] [專利文獻] For example, Patent Document 1 discloses tungsten-zirconium phosphate as a filler with a negative thermal expansion coefficient. [Prior Art Literature] [Patent Document]

[專利文獻1]日本專利特開2018-2577號公報[Patent Document 1] Japanese Patent Laid-Open No. 2018-2577

[發明所欲解決之問題][Problem to be solved by the invention]

然而,先前之材料未必能夠充分降低熱線膨脹係數。However, the prior materials may not be able to sufficiently reduce the coefficient of thermal expansion.

本發明係鑒於上述情況而成者,其目的在於提供一種可發揮優異之對熱線膨脹係數之控制特性之粒子群、以及使用其之組合物、成形體、及製造方法。 [解決問題之技術手段] The present invention was made in view of the above circumstances, and an object of the present invention is to provide a particle group capable of exhibiting excellent control characteristics of a thermal linear expansion coefficient, a composition, a molded article, and a production method using the same. [Technical means to solve the problem]

本發明人等經各種研究得出本發明。即,本發明係提供下述發明者。The present inventors arrived at the present invention through various studies. That is, the present invention provides the following inventors.

本發明之一態樣係一種粒子群,其中各粒子含有複數個晶體,該粒子群滿足以下要件1,且滿足以下要件2及要件3之至少一者。 要件1:於-200℃~1200℃中之至少一個溫度T1下,|dA(T)/dT|為10 ppm/℃以上。 A為(上述晶體之a軸(短軸)之晶格常數)/(上述晶體之c軸(長軸)之晶格常數),各上述晶格常數係由上述粒子群之X射線繞射測定所獲得。 要件2:S BET/S PSD為4.0~20.0。 S BET為藉由BET法所獲得之上述粒子群之比表面積。 S PSD為假想粒子群之比表面積,上述假想粒子群具有與由雷射繞射散射法而得之上述粒子群之體積基準之粒徑分佈相同之粒徑分佈、及與上述粒子群之真密度相同之真密度,且各假想粒子之形狀為真球。 要件3:下式所定義之空隙率為2.0~20.0%。 空隙率(%)=(1-粒子群之表觀密度/粒子群之真密度)×100 One aspect of the present invention is a particle group in which each particle contains a plurality of crystals, and the particle group satisfies the following requirement 1 and at least one of the following requirements 2 and 3. Requirement 1: At least one temperature T1 among -200°C to 1200°C, |dA(T)/dT| is 10 ppm/°C or more. A is (lattice constant of the a-axis (short axis) of the above-mentioned crystal)/(lattice constant of the c-axis (long axis) of the above-mentioned crystal), and each of the above-mentioned lattice constants is determined by X-ray diffraction of the above-mentioned particle group acquired. Requirement 2: S BET /S PSD is 4.0 to 20.0. S BET is the specific surface area of the above particle group obtained by the BET method. S PSD is the specific surface area of a virtual particle group that has the same particle size distribution as the volume-based particle size distribution of the above-mentioned particle group obtained by the laser diffraction scattering method, and the true density of the above-mentioned particle group The same true density, and the shape of each imaginary particle is a true sphere. Requirement 3: The porosity defined by the following formula is 2.0 to 20.0%. Porosity (%)=(1-apparent density of particle group/true density of particle group)×100

上述粒子群可滿足上述要件1~3之全部。The above-mentioned particle group can satisfy all of the above-mentioned requirements 1 to 3.

於上述粒子群中,藉由雷射繞射散射法所獲得之上述粒子群之體積基準之累積之粒徑分佈曲線中累積頻度達到50%之粒徑D50可為1~100 μm。In the above-mentioned particle group, the particle diameter D50 at which the cumulative frequency reaches 50% in the volume-based cumulative particle size distribution curve of the above-mentioned particle group obtained by the laser diffraction scattering method may be 1 to 100 μm.

上述晶體可為金屬氧化物。The aforementioned crystals may be metal oxides.

上述金屬氧化物可為含有具有d電子之金屬之金屬氧化物。The aforementioned metal oxide may be a metal oxide containing a metal having d electrons.

上述金屬氧化物可為含有鈦之金屬氧化物。The aforementioned metal oxide may be a metal oxide containing titanium.

上述含有鈦之金屬氧化物可為TiO x(x=1.30~1.66)。 The aforementioned metal oxide containing titanium may be TiO x (x=1.30˜1.66).

本發明之一態樣之組合物包含上述任一粒子群。The composition of one aspect of the present invention contains any one of the particle groups described above.

上述組合物可具有粉體形態。The above composition may have a powder form.

上述組合物進而可包含基質材料。The composition described above may in turn comprise a matrix material.

上述組合物進而可包含未硬化之硬化性樹脂。The above-mentioned composition may further contain an uncured curable resin.

本發明之一態樣之成形體係上述粒子群或具有粉體形態之組合物之成形體。A molding system of an aspect of the present invention is a molding of the above-mentioned particle group or a composition having a powder form.

本發明之一態樣之方法係上述任一粒子群之製造方法,其包括:步驟1,煅燒原料而獲得中間物;步驟2,粉碎上述中間物而獲得前驅物;及步驟3,煅燒上述前驅物,且上述步驟1及步驟3中之煅燒溫度為1000~1300℃。The method of one aspect of the present invention is a method for producing any one of the above-mentioned particle groups, which includes: step 1, calcination of raw materials to obtain intermediates; step 2, pulverization of the above-mentioned intermediates to obtain precursors; and step 3, calcination of the above-mentioned precursors material, and the calcination temperature in the above step 1 and step 3 is 1000-1300°C.

上述方法可於步驟2與步驟3之間包括藉由噴霧乾燥法將前驅物顆粒化而獲得顆粒狀前驅物之步驟。 [發明之效果] The above method may include the step of granulating the precursor by a spray drying method between step 2 and step 3 to obtain the granular precursor. [Effect of Invention]

根據本發明,可提供一種可發揮優異之對熱線膨脹係數之控制特性之粒子群、以及使用其之各種組合物及成形體。又,根據本發明,可提供一種可發揮優異之對熱線膨脹係數之控制特性之粒子群之製造方法。According to the present invention, it is possible to provide a particle group capable of exhibiting an excellent control characteristic of a thermal linear expansion coefficient, and various compositions and molded articles using the same. Also, according to the present invention, it is possible to provide a method for producing a particle group capable of exhibiting excellent control characteristics of thermal linear expansion coefficient.

以下,對本發明之較佳實施方式詳細地進行說明。然而,本發明並不限定於以下實施方式。Hereinafter, preferred embodiments of the present invention will be described in detail. However, the present invention is not limited to the following embodiments.

<粒子群P> 粒子群P包含複數個粒子。各粒子包含複數個晶體,各粒子可為複數個晶體之凝集體。各粒子可為以1個晶體作為一次粒子之二次粒子,亦可為以複數個晶體之集合體作為一次粒子之二次粒子。 <Particle Swarm P> The particle group P includes a plurality of particles. Each particle contains a plurality of crystals, and each particle can be an aggregate of a plurality of crystals. Each particle may be a secondary particle in which a single crystal is used as the primary particle, or a secondary particle in which an aggregate of a plurality of crystals is used as the primary particle.

粒子群P滿足以下要件1,進而滿足以下要件2及要件3之至少一者。粒子群P較佳為滿足下述要件1~3之全部。 要件1:於-200℃~1200℃中之至少一個溫度T1下,|dA(T)/dT|為10 ppm/℃以上。 A為(上述晶體之a軸(短軸)之晶格常數)/(上述晶體之c軸(長軸)之晶格常數),各晶格常數係由粒子群P之X射線繞射測定所獲得。 The particle group P satisfies the following requirement 1, and further satisfies at least one of the following requirements 2 and 3. The particle group P preferably satisfies all of the following requirements 1 to 3. Requirement 1: At least one temperature T1 among -200°C to 1200°C, |dA(T)/dT| is 10 ppm/°C or more. A is (lattice constant of the a-axis (short axis) of the above-mentioned crystal)/(lattice constant of the c-axis (long axis) of the above-mentioned crystal), and each lattice constant is determined by the X-ray diffraction measurement of the particle group P get.

要件2:S BET/S PSD為4.0~20.0。 S BET為藉由BET法所獲得之上述粒子群P之比表面積。 S PSD為假想粒子群V之比表面積。假想粒子群V具有與藉由雷射繞射散射法所獲得之粒子群P之體積基準之粒徑分佈相同之粒徑分佈、及與上述粒子群之真密度相同之真密度,且各假想粒子之形狀為真球。 Requirement 2: S BET /S PSD is 4.0 to 20.0. S BET is the specific surface area of the particle group P obtained by the BET method. S PSD is the specific surface area of the virtual particle group V. The virtual particle group V has the same particle size distribution as the particle size distribution based on the volume of the particle group P obtained by the laser diffraction scattering method, and the same true density as the true density of the above-mentioned particle group, and each virtual particle The shape is a true sphere.

要件3:下式所定義之空隙率為2.0~20.0%。 空隙率(%)=(1-粒子群P之表觀密度/粒子群P之真密度)×100 Requirement 3: The porosity defined by the following formula is 2.0 to 20.0%. Porosity (%)=(1-apparent density of particle group P/true density of particle group P)×100

(要件1) 對要件1詳細地進行說明。 A之定義中之晶格常數係藉由粒子群P之粉末X射線繞射測定來特定。作為分析法,存在Rietveld法、或利用基於最小平方法之擬合進行之分析。 (requirement 1) Requirement 1 will be described in detail. The lattice constant in the definition of A is specified by the powder X-ray diffraction measurement of the particle group P. As an analysis method, there is the Rietveld method, or an analysis by fitting based on the least squares method.

於本說明書中,於藉由粉末X射線繞射測定所特定出之粒子群P中之晶體之結構中,將與最小晶格常數對應之軸設為a軸,將與最大晶格常數對應之軸設為c軸。將晶格之a軸之長度及c軸之長度分別設為a軸長、c軸長。In this specification, in the crystal structure of the particle group P specified by powder X-ray diffraction measurement, the axis corresponding to the smallest lattice constant is set as the a-axis, and the axis corresponding to the largest lattice constant is The axis is set to the c-axis. Let the length of the a-axis and the length of the c-axis of the crystal lattice be the length of the a-axis and the length of the c-axis, respectively.

A(T)為表示晶軸之長度之各向異性大小之參數,且為溫度T(單位℃)之函數。A(T)之值越大,a軸長相對於c軸長越大,A之值越小,a軸長相對於c軸長越小。A(T) is a parameter representing the anisotropy of the length of the crystal axis, and is a function of temperature T (unit °C). The larger the value of A(T), the larger the length of the a-axis relative to the length of the c-axis, and the smaller the value of A, the smaller the length of the a-axis relative to the length of the c-axis.

其中,|dA(T)/dT|表示dA(T)/dT之絕對值,dA(T)/dT表示A(T)之T(溫度)之微分。 其中,於本說明書中,|dA(T)/dT|由以下(1)式定義。 |dA(T)/dT|=|A(T+50)-A(T)|/50…(1) Here, |dA(T)/dT| represents the absolute value of dA(T)/dT, and dA(T)/dT represents the differential of T (temperature) of A(T). However, in this specification, |dA(T)/dT| is defined by the following formula (1). |dA(T)/dT|=|A(T+50)-A(T)|/50...(1)

如上所述,本實施方式之粒子群P中之晶體需要於-200℃~1200℃中之至少一個溫度T1下,|dA(T)/dT|滿足10 ppm/℃以上。其中,|dA(T)/dT|係在晶體以固體狀態存在之範圍內被定義。因此,(1)式中之T之最高溫度為較晶體(粒子)之熔點低50℃之溫度。即,於附加有「-200℃~1200℃中之至少一個溫度T1」之限定之情形時,(1)式中之T之溫度範圍為-200~1150℃。As described above, the crystals in the particle group P of this embodiment need to satisfy |dA(T)/dT| of 10 ppm/°C or higher at at least one temperature T1 of -200°C to 1200°C. Here, |dA(T)/dT| is defined within the range where the crystal exists in a solid state. Therefore, the highest temperature of T in formula (1) is a temperature 50° C. lower than the melting point of crystals (particles). That is, when the limitation of "at least one temperature T1 among -200°C to 1200°C" is added, the temperature range of T in the formula (1) is -200 to 1150°C.

於-200℃~1200℃中之至少一個溫度T1下,|dA(T)/dT|較佳為20 ppm/℃以上,更佳為30 ppm/℃以上。|dA(T)/dT|之上限較佳為1000 ppm/℃以下,更佳為500 ppm/℃以下。At least one temperature T1 of -200°C to 1200°C, |dA(T)/dT| is preferably 20 ppm/°C or higher, more preferably 30 ppm/°C or higher. The upper limit of |dA(T)/dT| is preferably at most 1000 ppm/°C, more preferably at most 500 ppm/°C.

於至少一個溫度T1下,|dA(T)/dT|之值為10 ppm/℃以上意味著伴隨溫度變化之晶體結構之各向異性變化較大。A value of |dA(T)/dT| above 10 ppm/°C at at least one temperature T1 means that the anisotropy of the crystal structure varies greatly with temperature changes.

於至少一個溫度T1下,dA(T)/dT可為正亦可為負,但較佳為負。At at least one temperature T1, dA(T)/dT can be positive or negative, but preferably negative.

根據晶體之種類,有於某溫度範圍內晶體結構因結構相轉移產生變化者。於本說明書中,於某溫度下之晶體結構中,將與最小晶格常數對應之軸設為a軸,將與最大晶格常數對應之軸設為c軸。於三斜晶系、單斜晶系、直方晶系、正方晶系、六方晶系、菱面體晶系之任一晶系中,a軸、c軸均如上所定義。Depending on the type of crystal, the crystal structure may change due to structural phase transition within a certain temperature range. In this specification, in the crystal structure at a certain temperature, the axis corresponding to the minimum lattice constant is set as the a-axis, and the axis corresponding to the maximum lattice constant is set as the c-axis. In any crystal system of triclinic, monoclinic, rectangular, tetragonal, hexagonal, or rhombohedral, the a-axis and c-axis are as defined above.

若晶體滿足要件1,則於包含粒子群P之組合物、及成形體中,易降低熱線膨脹係數。If the crystal satisfies Requirement 1, it is easy to lower the coefficient of thermal expansion in the composition containing the particle group P and in the molded article.

(要件2) 繼而,對要件2進行說明。 S BET/S PSD表示粒子群P之各粒子形狀之複雜程度,並取1以上之值。 S BET為藉由BET法所獲得之粒子群P之比表面積。再者,於本說明書中,比表面積係指樣本之表面積除以樣本之質量所得之值。 (Requirement 2) Next, Requirement 2 will be described. S BET /S PSD represents the complexity of each particle shape of the particle group P, and takes a value of 1 or more. S BET is the specific surface area of the particle group P obtained by the BET method. In addition, in this specification, a specific surface area means the value obtained by dividing the surface area of a sample by the mass of a sample.

以下示出BET比表面積之測定方法。 於氮氣氛圍中以200℃將粒子群P乾燥30分鐘作為預處理。比表面積之測定中使用BET流動法。使用氮氣與氦氣之混合氣體作為吸附氣體。混合氣體中之氮氣之比率設為30體積%,混合氣體中之氦氣之比率設為70體積%。作為測定裝置,例如可使用BET比表面積測定裝置Macsorb HM-1201(Mountech公司製造)。 The method of measuring the BET specific surface area is shown below. The particle group P was dried at 200° C. for 30 minutes in a nitrogen atmosphere as a pretreatment. The BET flow method was used for the measurement of the specific surface area. A mixture of nitrogen and helium is used as the adsorption gas. The ratio of nitrogen in the mixed gas was set to 30% by volume, and the ratio of helium in the mixed gas was set to 70% by volume. As a measuring device, for example, a BET specific surface area measuring device Macsorb HM-1201 (manufactured by Mountech) can be used.

S PSD為假想粒子群V之比表面積。假想粒子群V具有與藉由雷射繞射散射法所獲得之粒子群P之體積基準之粒徑分佈相同之粒徑分佈、及與上述粒子群之真密度相同之真密度,且各假想粒子之形狀為真球。 S PSD is the specific surface area of the virtual particle group V. The virtual particle group V has the same particle size distribution as the particle size distribution based on the volume of the particle group P obtained by the laser diffraction scattering method, and the same true density as the true density of the above-mentioned particle group, and each virtual particle The shape is a true sphere.

以下示出基於雷射繞射散射法之體積基準之累積之粒子群P之粒徑分佈曲線的測定方法。The method of measuring the particle size distribution curve of the particle group P accumulated based on the volume of the laser diffraction scattering method is shown below.

關於預處理,係對1重量份粒子群P添加99重量份水進行稀釋,並藉由超音波清洗機進行超音波處理。超音波處理時間設為10分鐘。作為超音波清洗機,可使用日本精機製作所製造之NS200-6U。作為超音波之頻率,可設為28 kHz左右。The pretreatment was diluted by adding 99 parts by weight of water to 1 part by weight of the particle group P, and subjected to ultrasonic treatment with an ultrasonic cleaner. Ultrasonic treatment time was set at 10 minutes. As an ultrasonic cleaning machine, NS200-6U manufactured by Nippon Seiki Manufacturing Co., Ltd. can be used. As the frequency of ultrasonic waves, it can be set to about 28 kHz.

體積基準之粒子群P之粒徑分佈係藉由雷射繞射散射法來測定。例如可使用Malvern Instruments Ltd.製造之雷射繞射式粒度分佈測定裝置Mastersizer2000。The particle size distribution of the volume-based particle group P is measured by the laser diffraction scattering method. For example, a laser diffraction particle size distribution analyzer Mastersizer 2000 manufactured by Malvern Instruments Ltd. can be used.

於晶體為Ti 2O 3之情形時,可將Ti 2O 3之折射率設為2.40來進行測定。 When the crystal is Ti 2 O 3 , the refractive index of Ti 2 O 3 can be measured as 2.40.

認為S BET/S PSD越接近1,表示粒子群P之粒子形狀越接近真球,S BET/S PSD越大,表示粒子群P之粒子形狀越複雜。 It is considered that the closer S BET /S PSD is to 1, the closer the particle shape of particle group P is to a true sphere, and the larger S BET /S PSD is, the more complex the particle shape of particle group P is.

如上所述,於本實施方式之粒子群P中,S BET/S PSD需要為4.0以上20.0以下。S BET/S PSD較佳為4.3以上,更佳為4.5以上。S BET/S PSD可為5.0以上、6.0以上、7.0以上、8.0以上、9.0以上或10.0以上。S BET/S PSD較佳為16.0以下,更佳為15.0以下。S BET/S PSD可為14.0以下、13.0以下或12.0以下。 As described above, in the particle group P of this embodiment, S BET /S PSD needs to be 4.0 or more and 20.0 or less. S BET /S PSD is preferably at least 4.3, more preferably at least 4.5. S BET /S PSD can be 5.0 or more, 6.0 or more, 7.0 or more, 8.0 or more, 9.0 or more, or 10.0 or more. S BET /S PSD is preferably at most 16.0, more preferably at most 15.0. S BET /S PSD can be below 14.0, below 13.0 or below 12.0.

若粒子群P滿足要件2,則於包含粒子群P之組合物、及成形體中,易降低熱線膨脹係數。If the particle group P satisfies Requirement 2, the thermal linear expansion coefficient is likely to be lowered in the composition and molded article containing the particle group P.

(要件3) 繼而,對要件3進行說明。 要件3規定下式所定義之空隙率為2.0~20.0%。 空隙率(%)=(1-粒子群P之表觀密度/粒子群P之真密度)×100 (Requirement 3) Next, requirement 3 will be described. Requirement 3 stipulates that the porosity defined by the following formula is 2.0 to 20.0%. Porosity (%)=(1-apparent density of particle group P/true density of particle group P)×100

粒子群P之表觀密度係指粒子群P之質量除以構成粒子群P之固體之體積與構成粒子群P之固體內之閉氣孔之體積之合計而得之值。換言之,粒子群P之表觀密度意味著將固體所占之體積與閉氣孔之體積相加所得之體積作為密度計算用體積之密度。閉氣孔之體積越大,表觀密度之值越小,當不存在閉氣孔時,表觀密度等於真密度。The apparent density of the particle group P refers to the value obtained by dividing the mass of the particle group P by the sum of the volume of the solid constituting the particle group P and the volume of closed pores in the solid constituting the particle group P. In other words, the apparent density of the particle group P means that the volume obtained by adding the volume occupied by the solid to the volume of the closed pores is used as the density of the volume for density calculation. The larger the volume of the closed pores, the smaller the value of the apparent density. When there are no closed pores, the apparent density is equal to the true density.

粒子群P之真密度係指粒子群P之質量除以構成粒子群P之固體之體積而得者。換言之,粒子群P之真密度意味著僅將固體部分所占之體積作為密度計算用體積之密度。真密度並不取決於粒子形狀,係物質固有之值。The true density of the particle group P is obtained by dividing the mass of the particle group P by the volume of the solid constituting the particle group P. In other words, the true density of the particle group P means the density in which only the volume occupied by the solid portion is used as the volume for density calculation. The true density does not depend on the shape of the particle, it is an inherent value of matter.

粒子群P中之閉氣孔係存在於構成粒子群P之固體內部之空間。該空間於後述添加有粒子群P之組合物、及成形體等中,通常為未被其他材料填充之空間,從而可有助於降低熱膨脹率。閉氣孔可為形成於晶體內之空間,亦可為形成於晶體間之空間。例如,於粒子係在粒子內隨機配置有大量晶體之多晶粒子之情形時,粒子可於晶體間具有閉氣孔。The closed pores in the particle group P exist in the space inside the solid constituting the particle group P. This space is usually a space not filled with other materials in the composition to which the particle group P is added, the molded article, etc. mentioned later, and contributes to reducing the thermal expansion rate. The closed pores may be spaces formed in crystals or spaces formed between crystals. For example, when the particles are polycrystalline particles in which a large number of crystals are randomly arranged within the particles, the particles may have closed pores between the crystals.

圖1係本實施方式之粒子群P之粒子之一例之模式剖面圖。粒子4為具有複數個晶體2之凝集體,並且粒子4具有配置於晶體2之間之閉氣孔6。FIG. 1 is a schematic cross-sectional view of an example of particles of the particle group P according to this embodiment. The particle 4 is an aggregate having a plurality of crystals 2 , and the particle 4 has closed pores 6 arranged between the crystals 2 .

上述式所定義之空隙率意味著存在於粒子群P內之閉氣孔之合計體積相對於粒子群P之表觀體積之比率。再者,粒子群P之表觀體積係指構成粒子群P之固體之體積與構成粒子群P之固體內之閉氣孔之體積之合計。The porosity defined by the above formula means the ratio of the total volume of closed pores present in the particle group P to the apparent volume of the particle group P. Furthermore, the apparent volume of the particle group P refers to the sum of the volume of the solid constituting the particle group P and the volume of closed pores in the solid constituting the particle group P.

如上所述,於本實施方式之粒子中,上述空隙率需要為2.0%以上20%以下。該空隙率較佳為2.3%以上,更佳為2.5%以上。空隙率可為2.7%以上、2.8%以上、2.9%以上、3.0%以上、3.2%以上、3.5%以上、3.7%以上或4.0%以上。空隙率較佳為16%以下,更佳為14%以下。空隙率可為13.0%以下、12.0%以下、11.0%以下、10.0%以下、9.0%以下、8.0%以下、7.0%以下、6.0%以下或5.0%以下。As mentioned above, in the particle|grains of this embodiment, the said porosity needs to be 2.0 % or more and 20 % or less. The porosity is preferably at least 2.3%, more preferably at least 2.5%. The porosity may be 2.7% or more, 2.8% or more, 2.9% or more, 3.0% or more, 3.2% or more, 3.5% or more, 3.7% or more, or 4.0% or more. The porosity is preferably at most 16%, more preferably at most 14%. The porosity may be 13.0% or less, 12.0% or less, 11.0% or less, 10.0% or less, 9.0% or less, 8.0% or less, 7.0% or less, 6.0% or less, or 5.0% or less.

若粒子滿足要件3,則於包含粒子群P之組合物等、及成形體中,易降低熱線膨脹係數。If the particles satisfy Requirement 3, the coefficient of thermal expansion is likely to be lowered in a composition containing the particle group P, etc., and in a molded article.

本說明書中,於粒子群P之體積基準之累積之粒徑分佈曲線中,自粒徑較小者起計算累積頻度,將累積頻度達到50%時之粒徑設為D50。In this specification, in the cumulative particle size distribution curve based on the volume of the particle group P, the cumulative frequency is calculated from the smaller particle size, and the particle size when the cumulative frequency reaches 50% is set as D50.

就保證添加有粒子群P之液體組合物之流動性之觀點而言,D50較佳為1 μm以上,更佳為3 μm以上,進而較佳為5 μm以上,極佳為7 μm以上。就保證添加有粒子群P之液體組合物對狹小間隙之易滲入性之觀點而言,D50較佳為100 μm以下,更佳為80 μm以下,進而較佳為60 μm以下。D50可為50 μm以下、40 μm以下、30 μm以下、25 μm以下、20 μm以下或15 μm以下。From the viewpoint of ensuring the fluidity of the liquid composition added with the particle group P, D50 is preferably at least 1 μm, more preferably at least 3 μm, further preferably at least 5 μm, and most preferably at least 7 μm. From the viewpoint of ensuring the ease of penetration into narrow gaps of the liquid composition added with the particle group P, D50 is preferably 100 μm or less, more preferably 80 μm or less, further preferably 60 μm or less. D50 may be 50 μm or less, 40 μm or less, 30 μm or less, 25 μm or less, 20 μm or less, or 15 μm or less.

晶體較佳為氧化物。尤其是,晶體更佳為金屬氧化物。金屬氧化物可含有複數個金屬。The crystal is preferably an oxide. In particular, the crystal is more preferably a metal oxide. Metal oxides may contain a plurality of metals.

作為金屬氧化物,並無特別限定,較佳為含有具有d電子之金屬之金屬氧化物,更佳為含有僅具有d電子中之3d電子之金屬的金屬氧化物。The metal oxide is not particularly limited, but is preferably a metal oxide containing a metal having d electrons, more preferably a metal oxide containing a metal having only 3d electrons among d electrons.

作為含有具有d電子之金屬之金屬氧化物,並無特別限定,例如可例舉含有Sc、Ti、V、Cr、Mn、Fe、Co、Ni、Cu、Y、Zr、Nb、Mo之金屬氧化物。The metal oxide containing a metal having d electrons is not particularly limited, and examples include metal oxides containing Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Y, Zr, Nb, and Mo. thing.

作為含有僅具有d電子中之3d電子之金屬的金屬氧化物,例如可例舉含有Sc、Ti、V、Cr、Mn、Fe、Co、Ni、Cu之金屬氧化物。其中,就資源性之觀點而言,較佳為含有鈦之金屬氧化物。Examples of the metal oxide containing a metal having only 3d electrons among d electrons include metal oxides containing Sc, Ti, V, Cr, Mn, Fe, Co, Ni, and Cu. Among them, metal oxides containing titanium are preferable from the viewpoint of resource availability.

更具體而言,含有鈦之金屬氧化物較佳為以組成式TiO x(x=1.30~1.66)來表示,進而較佳為以TiO x(x=1.40~1.60)這一組成式來表示。於TiO x中,Ti原子之一部分可被取代為其他元素。 More specifically, the metal oxide containing titanium is preferably represented by the composition formula TiO x (x=1.30-1.66), and more preferably represented by the composition formula TiO x (x=1.40-1.60). In TiOx , a part of Ti atoms may be replaced by other elements.

再者,含有鈦之金屬氧化物除TiO x以外,亦可為LaTiO 3之類的含有鈦及鈦以外之金屬原子之氧化物。 Furthermore, the metal oxide containing titanium may be an oxide containing titanium and metal atoms other than titanium, such as LaTiO 3 , in addition to TiO x .

作為上述晶體之晶體結構,較佳為具有鈣鈦礦結構或鋼玉結構,更佳為具有鋼玉結構。As the crystal structure of the above-mentioned crystal, it is preferable to have a perovskite structure or a corundum structure, and it is more preferable to have a corundum structure.

作為晶系,並無特別限定,較佳為菱面體晶系。作為空間群,較佳為歸屬於R-3c。Although it does not specifically limit as a crystal system, Rhombohedral crystal system is preferable. As a space group, it is preferably assigned to R-3c.

<粒子群P之製造方法> 接下來,對上述粒子群P之製造方法之一例進行說明。 本實施方式之粒子群P之製造方法包括煅燒原料而獲得中間物之步驟1、粉碎上述中間物而獲得前驅物之步驟2、及煅燒上述前驅物之步驟3,上述步驟1及步驟3中之煅燒溫度為1000℃以上1300℃以下。 <Manufacturing method of particle group P> Next, an example of a method for producing the above-mentioned particle group P will be described. The method for producing particle group P according to this embodiment includes step 1 of calcining raw materials to obtain intermediates, step 2 of pulverizing the intermediates to obtain precursors, and step 3 of calcining the precursors. The calcination temperature is not less than 1000°C and not more than 1300°C.

步驟1 原料係指經後序步驟可轉化為上述晶體之物質。原料之種類並無特別限定,可為單一物質亦可為混合物。例如,於所製造之粒子群P之晶體為含有鈦之金屬氧化物之情形時,原料可為金屬鈦與鈦氧化物之混合物。 step 1 The raw material refers to a substance that can be converted into the above-mentioned crystals through subsequent steps. The type of raw material is not particularly limited, and may be a single substance or a mixture. For example, when the crystal of the particle group P to be produced is a metal oxide containing titanium, the raw material may be a mixture of metal titanium and titanium oxide.

原料之煅燒較佳為用電爐來進行。電爐之構造例有箱型、坩堝型、管狀型、連續型、爐底升降型、旋轉窯、台車型等。作為箱型電爐,例如有FD-40×40×60-1Z4-18TMP(NEMS股份有限公司製造)。作為管狀型電爐,例如有PCR(MOTOYAMA股份有限公司製造)及DSPSH28(MOTOYAMA股份有限公司製造)。 步驟1中,可將原料全部轉化為上述晶體,亦可僅將原料之一部分轉化為上述晶體。換言之,只要所得之中間物含有上述粒子群P中之晶體即可,可含有未反應之原料,亦可不含未反應之原料。 Calcination of raw materials is preferably carried out in an electric furnace. Examples of electric furnace structures include box type, crucible type, tubular type, continuous type, bottom lift type, rotary kiln, platform type, etc. As a box-type electric furnace, there exists FD-40*40*60-1Z4-18TMP (made by NEMS Co., Ltd.), for example. Examples of tubular electric furnaces include PCR (manufactured by MOTOYAMA Co., Ltd.) and DSPSH28 (manufactured by MOTOYAMA Co., Ltd.). In step 1, all the raw materials can be converted into the above-mentioned crystals, or only a part of the raw materials can be converted into the above-mentioned crystals. In other words, as long as the obtained intermediate contains the crystals in the above-mentioned particle group P, unreacted raw materials may or may not be contained.

步驟2 步驟1中所得之中間物之粉碎方法並無特別限定,例如可例舉將粉碎物放入研缽中使用杵進行粉碎之方法、及使用球磨機或珠磨機進行粉碎之方法。粉碎可為乾式粉碎亦可為濕式粉碎。藉由適當變更粉碎之條件,例如所施加之力之強度及進行粉碎之時間,可調整所得之前驅物之粒子群之平均粒徑。 step 2 The method of pulverizing the intermediate obtained in Step 1 is not particularly limited, and examples include a method of pulverizing the pulverized product in a mortar with a pestle, and a method of pulverizing with a ball mill or bead mill. The crushing can be dry crushing or wet crushing. By appropriately changing the crushing conditions, such as the intensity of the applied force and the time for performing the crushing, the average particle diameter of the particle group of the obtained precursor can be adjusted.

於上述步驟2與步驟3之間,進而可包括藉由噴霧乾燥法將粉碎後之前驅物顆粒化而獲得顆粒狀前驅物之步驟。Between the above step 2 and step 3, a step of granulating the pulverized precursor by spray drying to obtain the granular precursor may be further included.

步驟3 前驅物之煅燒可藉由與步驟1中之煅燒同樣之方法來進行。 step 3 The calcination of the precursor can be carried out by the same method as the calcination in step 1.

如上所述,步驟1及步驟3中之煅燒溫度為1000℃以上1300℃以下。就提高粒子群P中之結晶性之觀點而言,煅燒溫度例如可為1025℃以上,可為1040℃以上,亦可為1050℃以上。就防止晶體粒徑及粒子群之各粒徑增大之觀點而言,煅燒溫度例如可為1275℃以下,可為1260℃以下,亦可為1250℃以下。步驟1中之煅燒溫度與步驟3中之煅燒溫度可相同亦可不同。As mentioned above, the calcination temperature in step 1 and step 3 is not less than 1000°C and not more than 1300°C. From the viewpoint of improving the crystallinity in the particle group P, the firing temperature may be, for example, 1025°C or higher, 1040°C or higher, or 1050°C or higher. From the viewpoint of preventing the increase of the crystal particle size and each particle size of the particle group, the calcination temperature may be, for example, 1275°C or lower, 1260°C or lower, or 1250°C or lower. The calcination temperature in step 1 and the calcination temperature in step 3 can be the same or different.

若煅燒溫度處於上述範圍,則有易控制粒子群之S BET/S PSD及上述空隙率之傾向。其結果,易製作可發揮優異之熱線膨脹控制特性之粒子群。 When the calcination temperature is in the above-mentioned range, it tends to be easy to control the S BET /S PSD of the particle group and the above-mentioned porosity. As a result, it is easy to produce a particle group that can exhibit excellent thermal expansion control characteristics.

<含有粒子群P之組合物> <第1組合物(填料用粉體組合物)> 本發明之一實施方式為含有上述粒子群P及其他粉體之粉體組合物。此種粉體組合物可適宜用作用於控制後述固體組合物之熱膨脹率之填料。粉體組合物中之粒子群P之含量並無限定,可根據含量來發揮控制熱膨脹量之功能。就高效率地控制熱膨脹量之觀點而言,上述粒子群P之含量可為75質量%以上,可為85質量%以上,亦可為95質量%以上。 <Composition containing particle group P> <First composition (powder composition for filler)> One embodiment of the present invention is a powder composition containing the above-mentioned particle group P and other powders. Such a powder composition can be suitably used as a filler for controlling the coefficient of thermal expansion of a solid composition described later. The content of the particle group P in the powder composition is not limited, and the function of controlling the amount of thermal expansion can be exerted according to the content. From the viewpoint of efficiently controlling the amount of thermal expansion, the content of the particle group P may be 75% by mass or more, 85% by mass or more, or 95% by mass or more.

粉體組合物中之粒子群P以外之其他粉體之例為碳酸鈣、滑石、雲母、氧化矽、黏土、矽灰石、鈦酸鉀、硬矽鈣石、石膏纖維、硼酸鋁、芳香族聚醯胺纖維、碳纖維、玻璃纖維、玻璃鱗片、聚氧苯甲醯鬚晶、玻璃氣球、碳黑、石墨、氧化鋁、氮化鋁、氮化硼、氧化鈹、鐵氧體、氧化鐵、鈦酸鋇、鋯鈦酸鉛、沸石、鐵粉、鋁粉、硫酸鋇、硼酸鋅、紅磷、氧化鎂、鋁碳酸鎂、氧化銻、氫氧化鋁、氫氧化鎂、碳酸鋅、TiO 2、TiO。 Examples of powders other than particle group P in the powder composition are calcium carbonate, talc, mica, silicon oxide, clay, wollastonite, potassium titanate, xonotlite, gypsum fiber, aluminum borate, aromatic Polyamide fiber, carbon fiber, glass fiber, glass flake, polyoxybenzoyl whisker, glass balloon, carbon black, graphite, alumina, aluminum nitride, boron nitride, beryllium oxide, ferrite, iron oxide, Barium titanate, lead zirconate titanate, zeolite, iron powder, aluminum powder, barium sulfate, zinc borate, red phosphorus, magnesium oxide, aluminum magnesium carbonate, antimony oxide, aluminum hydroxide, magnesium hydroxide, zinc carbonate, TiO 2 , TiO.

粉體組合物之D50可與上述粒子之D50同樣地設定。The D50 of the powder composition can be set in the same manner as the D50 of the above-mentioned particles.

粉體組合物之製造方法並無特別限定,例如只要將上述粒子群P與其他粉體加以混合,並視需要藉由壓碎、篩分、粉碎等來調整粒徑分佈即可。The method for producing the powder composition is not particularly limited. For example, the above-mentioned particle group P is mixed with other powders, and the particle size distribution can be adjusted by crushing, sieving, pulverizing, etc. as necessary.

<第2組合物(固體組合物)> 本實施方式之固體組合物包含基質材料、及上述粒子群P。 <Second composition (solid composition)> The solid composition of the present embodiment includes a matrix material and the particle group P mentioned above.

[基質材料] 作為基質材料,並無特別限定,可例舉樹脂、鹼金屬矽酸鹽、陶瓷、金屬等。基質材料可於常溫(20℃)下以固體狀態保持上述粒子群P即可。 [Matrix material] The base material is not particularly limited, and examples thereof include resins, alkali metal silicates, ceramics, and metals. The matrix material may maintain the above-mentioned particle group P in a solid state at normal temperature (20° C.).

樹脂之例為熱塑性樹脂、及熱或活性能量線硬化型樹脂之硬化物。Examples of resins are thermoplastic resins and cured products of thermal or active energy ray curable resins.

熱塑性樹脂之例為聚烯烴(聚乙烯、聚丙烯等)、ABS(Acrylonitrile-Butadiene-Styrene,丙烯腈-丁二烯-苯乙烯)樹脂、聚醯胺(尼龍6、尼龍6,6等)、聚醯胺醯亞胺、聚酯(聚對苯二甲酸乙二酯、聚萘二甲酸乙二酯)、液晶聚合物、聚苯醚、聚縮醛、聚碳酸酯、聚苯硫醚、聚醯亞胺、聚醚醯亞胺、聚醚碸、聚酮、聚苯乙烯、及聚醚醚酮。Examples of thermoplastic resins are polyolefins (polyethylene, polypropylene, etc.), ABS (Acrylonitrile-Butadiene-Styrene, acrylonitrile-butadiene-styrene) resins, polyamides (nylon 6, nylon 6,6, etc.), Polyamide imide, polyester (polyethylene terephthalate, polyethylene naphthalate), liquid crystal polymer, polyphenylene oxide, polyacetal, polycarbonate, polyphenylene sulfide, poly imide, polyetherimide, polyethersulfone, polyketone, polystyrene, and polyetheretherketone.

熱硬化型樹脂之例為環氧樹脂、氧雜環丁烷樹脂、不飽和聚酯樹脂、醇酸樹脂、酚樹脂(酚醛樹脂、可溶酚醛樹脂等)、丙烯酸樹脂、胺基甲酸酯樹脂、矽酮樹脂、聚醯亞胺樹脂、及三聚氰胺樹脂等。 活性能量線硬化型樹脂之例為紫外線硬化型樹脂、電子束硬化型樹脂,例如可為胺基甲酸酯丙烯酸酯樹脂、環氧丙烯酸酯樹脂、丙烯酸丙烯酸酯樹脂、聚酯丙烯酸酯樹脂、甲基丙烯酸苯酚酯樹脂。樹脂之其他例為矽酮系、胺基甲酸酯系、橡膠系、丙烯酸系等黏著劑。 Examples of thermosetting resins are epoxy resins, oxetane resins, unsaturated polyester resins, alkyd resins, phenolic resins (phenolic resins, resole resins, etc.), acrylic resins, and urethane resins. , silicone resin, polyimide resin, and melamine resin, etc. Examples of active energy ray curable resins include ultraviolet curable resins and electron beam curable resins, such as urethane acrylate resins, epoxy acrylate resins, acrylic acrylate resins, polyester acrylate resins, phenolic acrylate resin. Other examples of resins include adhesives such as silicone-based, urethane-based, rubber-based, and acrylic-based.

基質材料可包含1種上述樹脂,亦可包含2種以上。A matrix material may contain 1 type of said resin, and may contain 2 or more types.

就可提高耐熱性之觀點而言,基質材料較佳為環氧樹脂、聚醚碸、液晶聚合物、聚醯亞胺、聚醯胺醯亞胺、矽酮。From the standpoint of improving heat resistance, the base material is preferably epoxy resin, polyethersulfone, liquid crystal polymer, polyimide, polyamideimide, or silicone.

作為鹼金屬矽酸鹽,可例舉矽酸鋰、矽酸鈉、矽酸鉀。第一材料可包含1種鹼金屬矽酸鹽,亦可包含2種以上。該等材料之耐熱性高,故而較佳。Examples of the alkali metal silicate include lithium silicate, sodium silicate, and potassium silicate. The first material may contain one type of alkali metal silicate, or may contain two or more types. Such materials are preferable because of their high heat resistance.

作為陶瓷,並無特別限定,可例舉:氧化鋁、氧化矽(包括矽氧化物、氧化矽玻璃)、氧化鈦、氧化鋯、氧化鎂、氧化鈰、氧化釔、氧化鋅、氧化鐵等氧化物系陶瓷;氮化矽、氮化鈦、氮化硼等氮化物系陶瓷;碳化矽、碳酸鈣、硫酸鋁、硫酸鋇、氫氧化鋁、鈦酸鉀、滑石、高嶺黏土、高嶺土、多水高嶺土、葉蠟石、蒙脫石、絹雲母、雲母、鎂綠泥石、膨潤土、石綿、沸石、矽酸鈣、矽酸鎂、矽藻土、石英砂等陶瓷。第一材料可包含1種陶瓷,亦可包含2種以上。 陶瓷可提高耐熱性,故而較佳。可藉由放電電漿燒結等而製作燒結體。 The ceramics are not particularly limited, and examples include alumina, silicon oxide (including silicon oxide, silica glass), titanium oxide, zirconium oxide, magnesium oxide, cerium oxide, yttrium oxide, zinc oxide, and iron oxide. Material-based ceramics; silicon nitride, titanium nitride, boron nitride and other nitride-based ceramics; silicon carbide, calcium carbonate, aluminum sulfate, barium sulfate, aluminum hydroxide, potassium titanate, talc, kaolin clay, kaolin, polyhydrate Kaolin, pyrophyllite, montmorillonite, sericite, mica, magnesium chlorite, bentonite, asbestos, zeolite, calcium silicate, magnesium silicate, diatomaceous earth, quartz sand and other ceramics. The 1st material may contain 1 type of ceramics, and may contain 2 or more types. Ceramics are preferable because they improve heat resistance. A sintered body can be produced by discharge plasma sintering or the like.

作為金屬,並無特別限定,可例舉鋁、鉭、鈮、鈦、鉬、鐵、鎳、鈷、鉻、銅、銀、金、鉑、鉛、錫、鎢等金屬單質、不鏽鋼(SUS)等合金、及該等之混合物。第一材料可包含1種金屬,亦可包含2種以上。此類金屬可提高耐熱性,故而較佳。The metal is not particularly limited, and examples include aluminum, tantalum, niobium, titanium, molybdenum, iron, nickel, cobalt, chromium, copper, silver, gold, platinum, lead, tin, tungsten and other simple metals, stainless steel (SUS) Such alloys, and such mixtures. The first material may contain one type of metal, or may contain two or more types. Such metals are preferable because they improve heat resistance.

[其他成分] 固體組合物可包含除基質材料及上述粒子群P以外之其他成分。作為該成分,例如可例舉觸媒。作為觸媒,並無特別限定,可例舉酸性化合物、鹼性化合物、有機金屬化合物等。作為酸性化合物,可使用鹽酸、硫酸、硝酸、磷酸、磷酸、甲酸、乙酸、草酸等酸。作為鹼性化合物,可使用氫氧化銨、氫氧化四甲基銨、氫氧化四乙基銨等。作為有機金屬化合物,可例舉包含鋁、鋯、錫、鈦或鋅之化合物等。又,可包含第1組合物(粉體組合物)中所例示之除粒子群P以外之其他粉體。 [other ingredients] The solid composition may contain other components than the matrix material and the above-mentioned particle group P. As this component, a catalyst is mentioned, for example. It does not specifically limit as a catalyst, An acidic compound, a basic compound, an organometallic compound etc. are mentioned. As the acidic compound, acids such as hydrochloric acid, sulfuric acid, nitric acid, phosphoric acid, phosphoric acid, formic acid, acetic acid, and oxalic acid can be used. As the basic compound, ammonium hydroxide, tetramethylammonium hydroxide, tetraethylammonium hydroxide, or the like can be used. As an organometallic compound, the compound containing aluminum, zirconium, tin, titanium, or zinc, etc. are mentioned. In addition, powders other than the particle group P exemplified in the first composition (powder composition) may be contained.

固體組合物中之上述粒子群P之含量並無特別限定,可根據含量來發揮控制熱膨脹之功能。固體組合物中之上述粒子群P之含量例如可設為1重量%以上,可為3重量%以上,可為5重量%以上,可為10重量%以上,可為20重量%以上,可為40重量%以上,亦可為70重量%以上。若上述粒子群P之含量變高,則易發揮熱線膨脹係數之降低效果。固體組合物中之上述粒子群P之含量例如可設為99重量%以下。固體組合物中之上述粒子群P之含量可為95重量%以下,亦可為90重量%以下。The content of the above-mentioned particle group P in the solid composition is not particularly limited, and the function of controlling thermal expansion can be exerted according to the content. The content of the particle group P in the solid composition may be, for example, 1% by weight or more, 3% by weight or more, 5% by weight or more, 10% by weight or more, 20% by weight or more, or 40% by weight or more, or 70% by weight or more. When the content of the above-mentioned particle group P becomes high, the effect of reducing the coefficient of thermal linear expansion is likely to be exhibited. The content of the particle group P in the solid composition can be, for example, 99% by weight or less. The content of the above-mentioned particle group P in the solid composition may be 95% by weight or less, or may be 90% by weight or less.

固體組合物中之基質材料之含量例如可設為1重量%以上。固體組合物中之基質材料之含量可為5重量%以上,亦可為10重量%以上。固體組合物中之基質材料之含量例如可設為99重量%以下。固體組合物中之基質材料之含量可為97重量%以下,可為95重量%以下,可為90重量%以下,可為80重量%以下,可為60重量%以下,亦可為30重量%以下。The content of the matrix material in the solid composition can be, for example, 1% by weight or more. The content of the matrix material in the solid composition may be more than 5% by weight, or more than 10% by weight. The content of the matrix material in the solid composition can be, for example, 99% by weight or less. The content of the matrix material in the solid composition may be less than 97% by weight, less than 95% by weight, less than 90% by weight, less than 80% by weight, less than 60% by weight, or less than 30% by weight the following.

本實施方式之固體組合物包含上述粒子群P,故而與未添加該粒子群P之情形相比,可降低固體組合物之熱線膨脹係數。因此,根據該固體組合物,可獲得溫度變化時之尺寸變化極少之構件。因此,可適宜用於對溫度所引起之尺寸變化尤其敏感之光學構件及半導體製造裝置用構件。Since the solid composition of the present embodiment contains the above-mentioned particle group P, the thermal linear expansion coefficient of the solid composition can be reduced compared to the case where the particle group P is not added. Therefore, according to this solid composition, it is possible to obtain a member with little dimensional change when the temperature changes. Therefore, it can be suitably used for optical members and members for semiconductor manufacturing equipment that are particularly sensitive to dimensional changes due to temperature.

<第3組合物(液體組合物)> 本實施方式之液體組合物包含上述粒子群P、及液態材料。本實施方式之液體組合物係於25℃下具有流動性之組合物。該液體組合物可為上述固體組合物之原料。 「於25℃下具有流動性」係指於向規定容器內供給組合物並使液面水平後,使該容器傾斜45度,該液面於1小時後移動或變形。 <The third composition (liquid composition)> The liquid composition of the present embodiment includes the above-mentioned particle group P and a liquid material. The liquid composition of this embodiment is a fluid composition at 25°C. The liquid composition can be a raw material for the above-mentioned solid composition. "Having fluidity at 25°C" means that after supplying the composition into a predetermined container and making the liquid level level, the container is tilted at 45 degrees, and the liquid level moves or deforms one hour later.

[液態材料] 液態材料為液態,可為可使上述粒子群P分散者。液態材料可為基質材料之原料。 [Liquid Material] The liquid material is in a liquid state and may be capable of dispersing the particle group P described above. The liquid material can be the raw material of the matrix material.

例如,於基質材料為鹼金屬矽酸鹽之情形時,液態材料可包含鹼金屬矽酸鹽、及可使鹼金屬矽酸鹽溶解或分散之溶劑。於基質材料為熱塑性樹脂之情形時,液態材料可包含熱塑性樹脂、及可使熱塑性樹脂溶解或分散之溶劑。於基質材料為熱或活性能量線硬化型樹脂之硬化物之情形時,液態材料為硬化前之熱或活性能量線硬化型樹脂。For example, when the matrix material is an alkali metal silicate, the liquid material may include the alkali metal silicate and a solvent capable of dissolving or dispersing the alkali metal silicate. When the matrix material is a thermoplastic resin, the liquid material may include a thermoplastic resin and a solvent capable of dissolving or dispersing the thermoplastic resin. In the case where the base material is a cured product of heat or active energy ray curable resin, the liquid material is heat or active energy ray curable resin before hardening.

硬化前之熱硬化型樹脂於室溫下具有流動性,一加熱便會因交聯反應等硬化。硬化前之熱硬化型樹脂可包含1種樹脂,亦可包含2種以上。The thermosetting resin before hardening has fluidity at room temperature, and will harden due to cross-linking reaction when heated. The thermosetting resin before hardening may contain 1 type of resin, and may contain 2 or more types.

硬化前之活性能量線硬化型樹脂於室溫下具有流動性,藉由照射光(UV(Ultraviolet,紫外線)等)或電子束等活性能量線,發生交聯反應等而硬化。硬化前之活性能量線硬化型樹脂包含硬化性單體及/或硬化性低聚物,視需要進而可包含溶劑及/或光起始劑。硬化性單體及硬化性低聚物之例為光硬化性單體及光硬化性低聚物。光硬化性單體之例為單官能或多官能丙烯酸酯單體。光硬化性低聚物之例為胺基甲酸酯丙烯酸酯、環氧丙烯酸酯、丙烯酸丙烯酸酯、聚酯丙烯酸酯、甲基丙烯酸苯酚酯。Active energy ray-curable resins before curing have fluidity at room temperature, and are cured by irradiating active energy rays such as light (UV (Ultraviolet, ultraviolet rays) etc.) or electron beams to cause cross-linking reactions. The active energy ray-curable resin before curing contains a curable monomer and/or a curable oligomer, and may further contain a solvent and/or a photoinitiator as necessary. Examples of curable monomers and curable oligomers are photocurable monomers and photocurable oligomers. Examples of photocurable monomers are monofunctional or polyfunctional acrylate monomers. Examples of photocurable oligomers are urethane acrylate, epoxy acrylate, acrylate acrylate, polyester acrylate, phenol methacrylate.

溶劑之例可例舉醇溶劑、醚溶劑、酮溶劑、二醇溶劑、烴溶劑、非質子性極性溶劑等有機溶劑、水。又,鹼金屬矽酸鹽之情形時之溶劑例如為水。Examples of the solvent include organic solvents such as alcohol solvents, ether solvents, ketone solvents, glycol solvents, hydrocarbon solvents, aprotic polar solvents, and water. Moreover, the solvent in the case of an alkali metal silicate is water, for example.

[其他成分] 本實施方式之液體組合物可包含除液態材料及上述粒子群P以外之其他成分。例如可包含第1組合物(粉體組合物)中所例舉之除粒子群P以外之其他粉體。 [other ingredients] The liquid composition of this embodiment may contain other components other than the liquid material and the particle group P mentioned above. For example, powders other than the particle group P mentioned in the first composition (powder composition) may be included.

本實施方式之液體組合物中之上述粒子群P之含量並無特別限定,就控制硬化後之固體組合物中之熱膨脹率之觀點而言,可適當設定。具體而言,可與第2組合物(固體組合物)中之上述粒子群P之含量相同。The content of the particle group P in the liquid composition of the present embodiment is not particularly limited, and may be appropriately set from the viewpoint of controlling the coefficient of thermal expansion in the solid composition after hardening. Specifically, it may be the same as the content of the particle group P in the second composition (solid composition).

<液體組合物之製造方法> 液體組合物之製造方法並無特別限制。例如,可藉由將上述粒子群P或粉體組合物與液態材料進行攪拌混合而獲得液體組合物。作為攪拌方法,例如可例舉利用混合機所進行之攪拌混合。或者可藉由超音波處理將粒子群P等分散於液態材料中。 <Manufacturing method of liquid composition> The production method of the liquid composition is not particularly limited. For example, a liquid composition can be obtained by stirring and mixing the above-mentioned particle group P or powder composition with a liquid material. As a stirring method, the stirring mixing by a mixer is mentioned, for example. Alternatively, the particle group P and the like can be dispersed in the liquid material by ultrasonic treatment.

作為混合步驟可使用之混合方法,例如可例舉球磨機法、自轉-公轉混合機、葉輪迴轉法、葉片迴轉法、迴轉薄膜法、轉子/定子式混合機法、膠體磨機法、高壓均質機法、超音波分散法。於混合步驟中,可依序進行複數種混合方法,亦可同時進行複數種混合方法。 藉由於混合步驟中將組合物均質化同時施加剪切,可提高組合物之流動性及變形性。 As a mixing method that can be used in the mixing step, for example, ball mill method, self-rotation-revolution mixer, impeller rotation method, blade rotation method, rotary film method, rotor/stator type mixer method, colloid mill method, high-pressure homogenizer method, ultrasonic dispersion method. In the mixing step, multiple mixing methods may be performed sequentially, or multiple mixing methods may be performed simultaneously. By homogenizing the composition while applying shear during the mixing step, the flowability and deformability of the composition can be improved.

<固體組合物之製造方法> 於將上述液體組合物成形為所需形狀後,將液體組合物中之液態材料轉化為基質材料,藉此可製造將上述粒子群P或粉體組合物與基質材料複合化而成之固體組合物。 <Manufacturing method of solid composition> After the liquid composition is shaped into the desired shape, the liquid material in the liquid composition is converted into a matrix material, so that a solid composition composed of the above-mentioned particle group P or powder composition and matrix material can be produced. thing.

例如,於液態材料包含鹼金屬矽酸鹽及可使鹼金屬矽酸鹽溶解或分散之溶劑之情形、以及包含熱塑性樹脂及可使熱塑性樹脂溶解或分散之溶劑之情形時,藉由將液體組合物製成所需形狀後,自液體組合物中去除溶劑,可獲得包含上述粒子群等及基質材料(鹼金屬鹽或熱塑性樹脂)之固體組合物。For example, when the liquid material includes an alkali metal silicate and a solvent capable of dissolving or dispersing the alkali metal silicate, and a case of including a thermoplastic resin and a solvent capable of dissolving or dispersing the thermoplastic resin, by combining the liquid After the object is formed into a desired shape, the solvent is removed from the liquid composition to obtain a solid composition comprising the above-mentioned particle group and a matrix material (alkali metal salt or thermoplastic resin).

溶劑之去除方法可應用藉由自然乾燥、真空乾燥、加熱等使溶劑蒸發之方法。就抑制產生粗大氣泡之觀點而言,較佳為在去除溶劑時,一面將混合物之溫度維持在溶劑之沸點以下一面去除溶劑。As a method for removing the solvent, a method of evaporating the solvent by natural drying, vacuum drying, heating, or the like can be applied. From the viewpoint of suppressing the generation of coarse bubbles, it is preferable to remove the solvent while maintaining the temperature of the mixture below the boiling point of the solvent when removing the solvent.

於液態材料為硬化前之熱或活性能量線硬化型樹脂之情形時,將液體組合物製成所需形狀後,藉由熱或活性能量線(UV等)進行液體組合物之硬化處理即可。When the liquid material is heat or active energy ray hardening type resin before hardening, after forming the liquid composition into a desired shape, harden the liquid composition by heat or active energy rays (UV, etc.) .

將液體組合物製成規定形狀之方法之例如下:注入模具內;以及塗佈於基板表面而製成膜形狀。Examples of methods for forming a liquid composition into a predetermined shape are as follows: injecting into a mold; and coating on the surface of a substrate to form a film shape.

又,於基質材料為陶瓷或金屬之情形時,可以如下方式來進行。製備基質材料之原料粉與上述粒子群P等之混合物,對混合物進行熱處理以燒結基質材料之原料粉,藉此可獲得包含作為燒結體之基質材料、及上述粒子群P等之固體組合物。視需要,可藉由退火等熱處理來調整固體組合物之細孔。作為燒結方法,可採用通常之加熱、熱壓、放電電漿燒結等方法。Also, when the base material is ceramic or metal, it can be carried out as follows. A mixture of the raw material powder of the matrix material and the above-mentioned particle group P, etc. is prepared, and the mixture is heat-treated to sinter the raw material powder of the matrix material, whereby a solid composition comprising the matrix material as a sintered body and the above-mentioned particle group P, etc. can be obtained. If necessary, the pores of the solid composition can be adjusted by heat treatment such as annealing. As the sintering method, methods such as general heating, hot pressing, and discharge plasma sintering can be used.

放電電漿燒結係指一面對基質材料之原料粉與上述粒子群P等之混合物加壓,一面對混合物通入脈衝狀電流。藉此,基質材料之原料粉之間產生放電,從而可加熱基質材料之原料粉而將其燒結。Discharge plasma sintering refers to pressurizing the mixture of the raw material powder of the matrix material and the above-mentioned particle group P, etc., and passing a pulse-like current to the mixture. Thereby, electric discharge is generated between the raw material powder of the matrix material, and the raw material powder of the matrix material can be heated and sintered.

為防止所得之化合物與空氣接觸而變質,電漿燒結步驟較佳為於氬氣、氮氣、真空等惰性氣體下進行。In order to prevent the obtained compound from deteriorating due to contact with air, the plasma sintering step is preferably performed under an inert gas such as argon, nitrogen, or vacuum.

電漿燒結步驟中之加壓壓力較佳為處於超過0 MPa且100 MPa以下之範圍。為了獲得高密度之第一材料,電漿燒結步驟中之加壓壓力較佳為設為10 MPa以上,更佳為設為30 MPa以上。The applied pressure in the plasma sintering step is preferably within a range of more than 0 MPa and not more than 100 MPa. In order to obtain a high-density first material, the pressurized pressure in the plasma sintering step is preferably set at 10 MPa or above, more preferably at 30 MPa or above.

電漿燒結步驟之加熱溫度較佳為充分低於作為目標物之基質材料之熔點。The heating temperature in the plasma sintering step is preferably sufficiently lower than the melting point of the target host material.

進而,可藉由對所得之固體組合物進行熱處理而調整細孔之大小及分佈等。Furthermore, the size and distribution of fine pores can be adjusted by heat-treating the obtained solid composition.

<粒子群P或粉體組合物之成形體> 本實施方式之成形體係上述粒子群P或粉體組合物之成形體。本實施方式中之成形體可為藉由上述粒子群P或粉體組合物之燒結所獲得之燒結體。 <Molded body of particle group P or powder composition> The molding system of this embodiment is a molded body of the particle group P or powder composition described above. The molded body in this embodiment may be a sintered body obtained by sintering the above-mentioned particle group P or powder composition.

通常,藉由燒結上述粒子群P或粉體組合物而獲得成形體。於該情形時,較佳為於可以維持粒子群P中之晶體結構之溫度範圍內進行燒結。Usually, a molded body is obtained by sintering the above-mentioned particle group P or powder composition. In this case, it is preferable to perform sintering within a temperature range in which the crystal structure in the particle group P can be maintained.

可應用公知之各種燒結方法以獲得燒結體。作為獲得燒結體之方法,可採用通常之加熱、熱壓、放電電漿燒結等方法。Various known sintering methods can be applied to obtain a sintered body. As a method for obtaining a sintered body, common methods such as heating, hot pressing, and discharge plasma sintering can be used.

再者,本實施方式之成形體並不限於燒結體,例如亦可為藉由上述粒子群P或粉體組合物之加壓成形所獲得之加壓粉體。Furthermore, the molded body of this embodiment is not limited to a sintered body, and may be, for example, a pressurized powder obtained by press-molding the above-mentioned particle group P or powder composition.

根據本實施方式之上述粒子群P或粉體組合物之成形體,可提供熱膨脹較少之構件,可使溫度變化時之構件之尺寸變化極小。因此,可適宜用於對溫度所引起之尺寸變化尤其敏感之裝置所使用之各種構件。因此,可適宜用於對溫度所引起之尺寸變化尤其敏感之光學構件及半導體製造裝置用構件。According to the molded body of the above-mentioned particle group P or powder composition of this embodiment, a member with less thermal expansion can be provided, and the dimensional change of the member when the temperature changes can be minimized. Therefore, it can be suitably used for various members used in devices that are particularly sensitive to dimensional changes due to temperature. Therefore, it can be suitably used for optical members and members for semiconductor manufacturing equipment that are particularly sensitive to dimensional changes due to temperature.

接下來,對上述固體組合物及成形體之具體使用形態進行說明。 上述實施方式之固體組合物及成形體由於電絕緣性優異,故而可為電子裝置用構件、機械構件、容器、光學構件、接著劑。 Next, specific usage forms of the above-mentioned solid composition and molded body will be described. The solid composition and molded article of the above-mentioned embodiment are excellent in electrical insulation, so they can be used as components for electronic devices, mechanical components, containers, optical components, and adhesives.

[電子裝置用構件] 電子裝置用構件之例為密封構件、導電性接著劑、電路基板、預浸料、絕緣片。 [Components for electronic devices] Examples of members for electronic devices include sealing members, conductive adhesives, circuit boards, prepregs, and insulating sheets.

密封構件之例為半導體元件之密封構件、底部填充構件、3D-LSI(three-dimensional large-scale integration,三維大規模積體電路)用芯片間填充物。半導體元件之例為功率電晶體、功率IC(Integrated Circuit,積體電路)等功率半導體;LED(Light Emitting Diode,發光二極體)元件等發光元件。根據使用上述固體組合物及成形體之密封構件,可抑制因熱線膨脹係數之差所導致之裂縫。Examples of sealing members are sealing members for semiconductor elements, underfill members, and interchip fillers for 3D-LSI (three-dimensional large-scale integration). Examples of semiconductor elements include power semiconductors such as power transistors and power ICs (Integrated Circuits), and light emitting elements such as LEDs (Light Emitting Diodes, light emitting diodes). According to the sealing member using the above solid composition and molded body, cracks due to differences in thermal expansion coefficients can be suppressed.

導電性接著劑之例為各向異性導電膜、各向異性導電膏。藉由使導電性接著劑含有本實施方式之粒子,可降低接著構件之熱線膨脹,可消除異質材料接觸部分中之裂縫及翹曲之問題,又,可提高電絕緣性。Examples of the conductive adhesive are anisotropic conductive film and anisotropic conductive paste. By including the particles of the present embodiment in the conductive adhesive, thermal expansion of the adhesive member can be reduced, problems of cracks and warpage in the contact portion of different materials can be eliminated, and electrical insulation can be improved.

電路基板具備金屬層、及設置於金屬層上之電絕緣層。藉由於電絕緣層上使用上述固體組合物及成形體,可於維持電絕緣性之狀態下降低熱線膨脹係數,減小與金屬層之熱線膨脹係數之差,從而可消除翹曲及裂縫等問題。作為電路基板之具體例,可例舉印刷電路基板、多層印刷配線基板、增層基板、電容器內置基板等。The circuit substrate has a metal layer and an electrical insulating layer arranged on the metal layer. By using the above-mentioned solid composition and molded body on the electrical insulation layer, the coefficient of thermal expansion can be reduced while maintaining electrical insulation, and the difference between the thermal expansion coefficient and the metal layer can be reduced, thereby eliminating problems such as warping and cracks . As a specific example of a circuit board, a printed circuit board, a multilayer printed wiring board, a buildup board, a capacitor built-in board, etc. are mentioned.

預浸料為含有補強基材及含浸於該補強基材中之基質材料之含浸基材之半硬化物。藉由使預浸料含有本實施方式之粒子,硬化後之預浸料即使於施加有熱負載之環境下亦可發揮較高之尺寸穩定性。A prepreg is a semi-hardened material impregnated with a base material comprising a reinforcing base material and a matrix material impregnated in the reinforcing base material. By making the prepreg contain the particles of this embodiment, the cured prepreg can exhibit high dimensional stability even in an environment where a thermal load is applied.

絕緣片之例為聚氯乙烯等樹脂片。藉由使絕緣片含有上述粒子,可保持電絕緣性並提昇尺寸精度。An example of the insulating sheet is a resin sheet such as polyvinyl chloride. By making the insulating sheet contain the above-mentioned particles, electrical insulation can be maintained and dimensional accuracy can be improved.

[機械構件] 機械構件係指構成各種機械裝置之構件。機械裝置之例為切削裝置等機床、處理裝置、半導體製造裝置。機械構件之例為固定機構、移動機構、工具等。根據使用上述固體組合物及成形體之散熱構件,可抑制由熱膨脹引起之尺寸偏差,可提昇工作精度、加工精度等精度。又,亦適宜用於不同材料之構件間之接合部分。 [Mechanical components] Mechanical components refer to the components that constitute various mechanical devices. Examples of mechanical devices include machine tools such as cutting devices, processing devices, and semiconductor manufacturing devices. Examples of mechanical components are fixed mechanisms, moving mechanisms, tools, and the like. According to the heat dissipation member using the above-mentioned solid composition and molded body, dimensional deviation due to thermal expansion can be suppressed, and precision such as working precision and machining precision can be improved. In addition, it is also suitable for use in joints between members made of different materials.

又,機械構件可為旋轉構件。旋轉構件係指例如齒輪般一面旋轉一面與其他構件相互施加力學作用之構件。於旋轉構件中,若尺寸因熱膨脹而發生變化,則會產生嚙合不良、磨耗等問題,故而適宜應用上述固體組合物及成形體。Also, the mechanical member may be a rotating member. A rotating member refers to a member that rotates while interacting with other members, such as a gear. In a rotating member, if the size changes due to thermal expansion, problems such as meshing failure and wear will occur, so the above-mentioned solid composition and molded body are preferably used.

又,機械構件可為基板。於基板中,若尺寸因熱膨脹而發生變化,則會產生錯位等問題,故而適宜應用上述固體組合物及成形體。Also, the mechanical component may be a substrate. In the substrate, if the size changes due to thermal expansion, there will be problems such as dislocation, so the above-mentioned solid composition and molded body are preferably used.

[容器] 容器係指用於收容氣體、液體、固體等之構件。例如,容器之例為用於製作成形體之模具。例如若模具因熱膨脹而尺寸發生變化,則會產生無法保證成形體之尺寸精度等問題,故而適宜應用上述固體組合物及成形體。 [container] A container refers to a component used to contain gas, liquid, solid, etc. An example of a container is, for example, a mold for making a molded body. For example, if the size of the mold changes due to thermal expansion, there will be problems such as the dimensional accuracy of the molded body cannot be guaranteed, so the above-mentioned solid composition and molded body are suitable for use.

[光學構件] 光學構件之例為光纖、光波導、透鏡、反射鏡、稜鏡、濾光器、繞射光柵、光纖光柵、波長轉換構件。透鏡之例為光學拾取透鏡、相機用透鏡。光波導之例為陣列波導及平面光路。 [Optical components] Examples of optical components are optical fibers, optical waveguides, lenses, mirrors, filters, optical filters, diffraction gratings, fiber gratings, and wavelength conversion components. Examples of the lens are an optical pickup lens and a camera lens. Examples of optical waveguides are arrayed waveguides and planar optical circuits.

光學構件具有如下問題,即,若光柵間隔、折射率、光程長度等隨溫度變化而產生變化,則特性會產生變動。根據使用上述固體組合物及成形體之光學構件或光學構件之固定構件或支持基材,可減小此種基於溫度之光學構件之特性變動。The optical member has a problem in that if the grating interval, the refractive index, the optical path length, and the like change with changes in temperature, the characteristics will fluctuate. According to the optical member or the fixing member or the support substrate of the optical member using the above-mentioned solid composition and molded body, such variation in characteristics of the optical member due to temperature can be reduced.

[接著劑] 接著劑之例包含作為基質材料之環氧樹脂、矽酮樹脂等熱硬化性樹脂,及上述粒子。接著劑於硬化前可為液態,亦可為固態。該接著劑之硬化物由於可具有較低之熱線膨脹係數,故而可抑制裂縫。適宜應用於尤其是施加有熱負載之耐熱接著構件等。 [實施例] [adhesive] Examples of adhesives include thermosetting resins such as epoxy resins and silicone resins as matrix materials, and the above-mentioned particles. The adhesive can be liquid or solid before hardening. The cured product of the adhesive can suppress cracks due to its low coefficient of thermal expansion. It is suitable for heat-resistant adhesive members, etc., which are subjected to heat loads. [Example]

以下藉由實施例來進一步詳細地說明本發明。 1.粒子群之晶體結構分析 關於晶體結構之分析,使用粉末X射線繞射測定裝置SmartLab(Rigaku股份有限公司製造),於下述條件下改變溫度,對粒子群進行粉末X射線繞射測定,而獲得粉末X射線繞射圖案。對於構成晶體之化合物,基於所得之粉末X射線繞射圖案,使用PDXL2(Rigaku股份有限公司製造)軟體進行基於最小平方法之晶格常數精密化,求出2個晶格常數,即a軸長及c軸長。 The present invention will be described in further detail below by means of examples. 1. Crystal structure analysis of particle swarms For the analysis of the crystal structure, use a powder X-ray diffraction measurement device SmartLab (manufactured by Rigaku Co., Ltd.), change the temperature under the following conditions, perform powder X-ray diffraction measurement on the particle group, and obtain a powder X-ray diffraction pattern . For the compound constituting the crystal, based on the obtained powder X-ray diffraction pattern, the software PDXL2 (manufactured by Rigaku Co., Ltd.) was used to refine the lattice constant by the least square method, and two lattice constants, that is, the length of the a-axis, were obtained. and the c-axis length.

測定裝置:粉末X射線繞射測定裝置SmartLab(Rigaku股份有限公司製造) X射線產生器:CuKα射線源 電壓45 kV、電流200 mA 狹縫:狹縫寬度2 mm 掃描步長:0.02 deg 掃描範圍:5-80 deg 掃描速度:10 deg/min X射線檢測器:一維半導體檢測器 測定氣體:Ar 100 mL/min 試樣台:專用玻璃基板SiO 2製造 Measuring device: powder X-ray diffraction measuring device SmartLab (manufactured by Rigaku Co., Ltd.) X-ray generator: CuKα ray source voltage 45 kV, current 200 mA Slit: slit width 2 mm Scanning step: 0.02 deg Scanning range: 5-80 deg Scanning speed: 10 deg/min X-ray detector: One-dimensional semiconductor detector Measuring gas: Ar 100 mL/min Sample stage: Made of special glass substrate SiO 2

2.粒子群之BET比表面積(S BET)測定 藉由以下方法測定粒子之BET比表面積。 預處理:於氮氣氛圍中以200℃乾燥粒子群30分鐘。 測定:藉由BET流動法進行測定。 測定條件:使用氮氣與氦氣之混合氣體。混合氣體中之氮氣之比率設為30體積%,混合氣體中之氦氣之比率設為70體積%。 測定裝置:BET比表面積測定裝置Macsorb HM-1201(Mountech股份有限公司製造) 2. Measurement of BET specific surface area (S BET ) of particle population The BET specific surface area of particles was measured by the following method. Pretreatment: dry the particle group at 200° C. for 30 minutes in a nitrogen atmosphere. Measurement: Measurement was performed by BET flow method. Measuring conditions: use the mixed gas of nitrogen and helium. The ratio of nitrogen in the mixed gas was set to 30% by volume, and the ratio of helium in the mixed gas was set to 70% by volume. Measuring device: BET specific surface area measuring device Macsorb HM-1201 (manufactured by Mountech Co., Ltd.)

3.粒子群之粒徑分佈測定 藉由以下方法測定粒子群之粒徑分佈。 預處理:對1重量份粒子群添加99重量份水來進行稀釋,並藉由超音波清洗機進行超音波處理。超音波處理時間設為10分鐘,作為超音波清洗機,使用日本精機製作所股份有限公司製造之NS200-6U。作為超音波之頻率,以約28 kHz來實施。 測定:藉由雷射繞射散射法測定體積基準之粒子群之粒徑分佈。 測定條件:將Ti 2O 3之折射率設為2.40。 測定裝置:雷射繞射式粒度分佈測定裝置Mastersizer 2000(Malvern Instruments Ltd.製造) 基於所得之粒子群之粒徑分佈、及各粒子之形狀為球形這一假設算出S PSD。又,求出粒子群之D50。 3. Measurement of Particle Size Distribution of Particle Group The particle size distribution of the particle group was measured by the following method. Pretreatment: Add 99 parts by weight of water to 1 part by weight of the particle group for dilution, and perform ultrasonic treatment with an ultrasonic cleaning machine. The ultrasonic treatment time was set to 10 minutes, and as an ultrasonic cleaning machine, NS200-6U manufactured by Nippon Seiki Seisakusho Co., Ltd. was used. As the frequency of ultrasonic waves, it is implemented at about 28 kHz. Measurement: Measure the particle size distribution of the volume-based particle group by the laser diffraction scattering method. Measuring conditions: The refractive index of Ti 2 O 3 was set to 2.40. Measuring device: laser diffraction particle size distribution measuring device Mastersizer 2000 (manufactured by Malvern Instruments Ltd.) S PSD was calculated based on the obtained particle size distribution of the particle group and the assumption that each particle is spherical. Also, D50 of the particle swarm was obtained.

4.粒子群之空隙率測定 使用容積10 mL之比重瓶(AS ONE股份有限公司製造)並藉由依據JISZ 8807之方法來測定粒子群之表觀密度。使用水作為液體。 於粒子群之材料為Ti 2O 3之情形時,將Ti 2O 3之真密度設為4.49 g/cm 3來計算。 使用粒子群之表觀密度及粒子群之真密度並根據(2)式來算出粒子群之空隙率。 空隙率(%)=(1-粒子群之表觀密度/粒子群之真密度)×100…(2) 4. Measurement of porosity of particle group The apparent density of the particle group was measured by a method based on JISZ 8807 using a pycnometer with a capacity of 10 mL (manufactured by AS ONE Co., Ltd.). Use water as the liquid. When the material of the particle group is Ti 2 O 3 , the true density of Ti 2 O 3 is assumed to be 4.49 g/cm 3 for calculation. Using the apparent density of the particle group and the true density of the particle group to calculate the porosity of the particle group according to formula (2). Porosity (%)=(1-apparent density of particle group/true density of particle group)×100…(2)

5.熱膨脹控制特性(環氧樹脂複合材料)之評估 藉由以下方法製作粒子群與環氧樹脂之複合材料,並評估熱線膨脹控制特性。 藉由將57.5 g環氧樹脂(住友化學股份有限公司製造,ELM-100)、26.4 g硬化劑(東京化成股份有限公司製造,雙(4-胺基苯基)碸)、及0.3 g硬化促進劑(東京化成股份有限公司製造,哌啶鎓三氟硼酸鹽)混合而獲得未硬化之環氧樹脂組合物。藉由將5.0 g實施例及比較例之粒子群與1.3 g未硬化之環氧樹脂組合物混合而獲得混合物。 將所得之混合物放入鑄模中,一面施加壓力一面於180℃下硬化5分鐘後,冷卻至室溫,自鑄模中取出,進而於220℃下硬化2小時,而獲得環氧樹脂複合材料。 5. Evaluation of thermal expansion control characteristics (epoxy resin composite materials) The composite material of particle group and epoxy resin was produced by the following method, and the thermal expansion control characteristics were evaluated. By adding 57.5 g of epoxy resin (manufactured by Sumitomo Chemical Co., Ltd., ELM-100), 26.4 g of hardener (manufactured by Tokyo Chemical Co., Ltd., bis(4-aminophenyl) sulfide), and 0.3 g of hardening accelerator (Tokyo Chemical Co., Ltd., piperidinium trifluoroborate) was mixed to obtain an uncured epoxy resin composition. A mixture was obtained by mixing 5.0 g of the particle groups of Examples and Comparative Examples with 1.3 g of an unhardened epoxy resin composition. The resulting mixture was put into a mold and cured at 180° C. for 5 minutes while applying pressure, cooled to room temperature, taken out from the mold, and cured at 220° C. for 2 hours to obtain an epoxy resin composite material.

使用以下裝置來測定所得之環氧樹脂複合材料之熱線膨脹係數。 測定裝置:Thermo plus EVO2 TMA系列 Thermo plus 8311 測定條件設為溫度區域:-10℃~160℃、溫度變化速度:10℃/min、採樣間隔:2.7秒。 參考固體:氧化矽 The thermal linear expansion coefficient of the obtained epoxy resin composite material was measured using the following apparatus. Measuring device: Thermo plus EVO2 TMA series Thermo plus 8311 As measurement conditions, temperature range: -10°C to 160°C, temperature change rate: 10°C/min, sampling interval: 2.7 seconds. Reference Solid: Silicon Oxide

作為固體組合物之測定試樣之代表性大小,設為15 mm×4 mm×4 mm。 將固體組合物之測定試樣之最長邊設為試樣長度L,測定於溫度T下之試樣長度L(T)。藉由下述式算出相對於30℃之試樣長度(L(30℃))之尺寸變化率ΔL(T)/L(30℃)。 ΔL(100℃)/L(30℃)=(L(100℃)-L(30℃))/L(30℃) As a representative size of a measurement sample of a solid composition, it is set at 15 mm×4 mm×4 mm. The longest side of the solid composition measurement sample is set as the sample length L, and the sample length L(T) at the temperature T is measured. The dimensional change rate ΔL(T)/L(30°C) with respect to the sample length (L(30°C)) at 30°C was calculated by the following formula. ΔL(100℃)/L(30℃)=(L(100℃)-L(30℃))/L(30℃)

於100℃下之尺寸變化率即ΔL(100℃)/L(30℃)未達0.1%之情形時,評估為熱膨脹控制特性良好。When the rate of dimensional change at 100°C, ie, ΔL(100°C)/L(30°C), is less than 0.1%, it is evaluated that the thermal expansion control property is good.

(實施例1~2及比較例1~2) 藉由以下方法獲得實施例1~2及比較例1~2之粒子群。 (Examples 1-2 and Comparative Examples 1-2) The particle groups of Examples 1-2 and Comparative Examples 1-2 were obtained by the following method.

<實施例1> <步驟1> 向塑膠製之1 L聚乙烯瓶(外徑97.4 mm)中加入1000 g之2 mm ϕ氧化鋯球、166.7 g之TiO 2(石原產業股份有限公司製造,CR-EL)、及33.3 g之Ti(高純度化學研究所股份有限公司製造,<38 μm),將1 L聚乙烯瓶放置於球磨機台座上,以轉速60 rpm進行4小時球磨機混合,從而製作原料混合粉1。 <Example 1><Step1> 1000 g of 2 mmϕ zirconia balls and 166.7 g of TiO 2 (manufactured by Ishihara Sangyo Co., Ltd., CR -EL), and 33.3 g of Ti (manufactured by High Purity Chemical Research Institute Co., Ltd., <38 μm), a 1 L polyethylene bottle was placed on the ball mill stand, and the ball mill was mixed at a speed of 60 rpm for 4 hours to produce raw materials Mix powder 1.

將上述原料混合粉1填充於煅燒用容器(NIKKATO股份有限公司製造,SSA-T SAYA 90方形)中,再放入電爐(MOTOYAMA股份有限公司製造,PCR)中,用Ar置換電爐內之氣體,對原料混合粉進行煅燒。將煅燒程式設定為如下:歷時11小時自0℃升溫至1100℃,於1100℃下保持1小時,再歷時11小時自1100℃降溫至0℃。煅燒程式作動過程中,以5 L/分吹入Ar氣體。煅燒後,獲得中間物粉末1。Fill the above-mentioned raw material mixed powder 1 into a container for calcination (manufactured by NIKKATO Co., Ltd., SSA-T SAYA 90 square), and then put it into an electric furnace (manufactured by MOTOYAMA Co., Ltd., PCR), and replace the gas in the electric furnace with Ar, The raw material mixed powder is calcined. The calcination program was set as follows: the temperature was raised from 0° C. to 1100° C. over 11 hours, kept at 1100° C. for 1 hour, and the temperature was lowered from 1100° C. to 0° C. over 11 hours. During the operation of the calcination program, Ar gas was blown in at 5 L/min. After calcination, intermediate powder 1 was obtained.

<步驟2> 使用批次式Ready Mill(AIMEX股份有限公司製造,RM B-08)將中間物粉末1粉碎。使用800 cm 3之容器,於1348 rpm、周速5 m/s之條件下進行粉碎。使用0.5 mm粒徑之ZrO 2珠,以乙醇113 g、ZrO 2675 g、中間物粉末1 80 g之比率進行混合,粉碎60分鐘。粉碎後,獲得粉末A1。 <Step 2> The intermediate powder 1 was pulverized using a batch type Ready Mill (manufactured by AIMEX Co., Ltd., RM B-08). Use an 800 cm 3 container to pulverize at 1348 rpm and a peripheral speed of 5 m/s. Using ZrO 2 beads with a particle diameter of 0.5 mm, they were mixed at a ratio of 113 g of ethanol, 675 g of ZrO 2 , and 180 g of intermediate powder, and pulverized for 60 minutes. After pulverization, powder A1 was obtained.

將50 g粉末A1、200 g純水、10 g聚乙烯醇(富士膠片和光純藥股份有限公司製造,PVA-3500)之10wt%水溶液、及聚二醇(富士膠片和光純藥股份有限公司製造,PEG-400)混合,獲得漿料B1。50 g of powder A1, 200 g of pure water, 10 g of a 10 wt % aqueous solution of polyvinyl alcohol (manufactured by Fujifilm Wako Pure Chemical Industries, Ltd., PVA-3500), and polyglycol (manufactured by Fujifilm Wako Pure Chemical Industries, Ltd. , PEG-400) mixed to obtain slurry B1.

使用小型噴霧乾燥器(Yamato Scientific股份有限公司製造)對漿料B1進行噴霧乾燥。於壓力1.0 MPa、出口溫度85℃、吸出器顯示值40之條件下,以出口溫度恆定之方式適當調節輸液泵之輸出,進行噴霧乾燥。噴霧乾燥後,獲得前驅物粉末1。The slurry B1 was spray-dried using a small spray dryer (manufactured by Yamato Scientific Co., Ltd.). Under the conditions of a pressure of 1.0 MPa, an outlet temperature of 85°C, and a display value of 40 on the aspirator, the output of the infusion pump is properly adjusted in such a way that the outlet temperature is constant, and spray drying is carried out. After spray drying, precursor powder 1 was obtained.

<步驟3> 將前驅物粉末1填充於煅燒用容器(AS ONE股份有限公司製造,煅燒晶舟No.5)中,再放入管狀爐(MOTOYAMA股份有限公司製造,DSPSH28)中,用Ar置換管狀爐內之氣體,對前驅物粉末進行煅燒。將煅燒程式設定為如下:歷時11.5小時自0℃升溫至1150℃,於1150℃下保持1小時,再歷時11.5小時自1150℃降溫至0℃。煅燒程式作動過程中,以100 mL/分吹入Ar氣體。煅燒後,獲得實施例1之粒子群。 <Step 3> Fill the precursor powder 1 into a calcination container (manufactured by AS ONE Co., Ltd., calcined crystal boat No. 5), and then put it into a tubular furnace (manufactured by MOTOYAMA Co., Ltd., DSPSH28), and replace the inside of the tubular furnace with Ar. gas to calcine the precursor powder. The calcination program was set as follows: the temperature was raised from 0° C. to 1150° C. over 11.5 hours, kept at 1150° C. for 1 hour, and then the temperature was lowered from 1150° C. to 0° C. over 11.5 hours. During the operation of the calcination program, Ar gas was blown in at 100 mL/min. After calcination, the particle group of Example 1 was obtained.

<實施例2> <步驟1> 利用實施例1記載之方法製作原料混合粉1。 <Example 2> <Step 1> Raw material mixed powder 1 was produced by the method described in Example 1.

將上述原料混合粉1填充於煅燒用容器(NIKKATO股份有限公司製造,SSA-T SAYA 150方形)中,再放入電爐(NEMS股份有限公司製造,FD-40×40×60-1Z4-18TMP)中,用Ar置換電爐內之氣體,對原料混合粉進行煅燒。將煅燒程式設定為如下:歷時11.5小時自0℃升溫至1150℃,於1150℃下保持1小時,再歷時11.5小時自1150℃降溫至0℃。煅燒程式作動過程中,以2 L/分吹入Ar氣體。煅燒後,獲得中間物粉末2。Fill the above-mentioned raw material mixed powder 1 into a container for calcination (manufactured by NIKKATO Co., Ltd., SSA-T SAYA 150 square), and then put it into an electric furnace (manufactured by NEMS Co., Ltd., FD-40×40×60-1Z4-18TMP) In the process, the gas in the electric furnace is replaced with Ar, and the raw material mixed powder is calcined. The calcination program was set as follows: the temperature was raised from 0° C. to 1150° C. over 11.5 hours, kept at 1150° C. for 1 hour, and then the temperature was lowered from 1150° C. to 0° C. over 11.5 hours. During the operation of the calcination program, Ar gas was blown in at 2 L/min. After calcination, intermediate powder 2 was obtained.

<步驟2> 使用批次式Ready Mill(AIMEX股份有限公司製造,RM B-08)將中間物粉末2粉碎。使用800 cm 3之容器,於1348 rpm、周速5 m/s之條件下進行粉碎。使用0.5 mm粒徑之ZrO 2珠,以乙醇113 g、ZrO 2675 g、中間物粉末2 80 g之比率進行混合,粉碎60分鐘。粉碎後,獲得粉末A2。 <Step 2> The intermediate powder 2 was pulverized using a batch type Ready Mill (manufactured by AIMEX Co., Ltd., RM B-08). Use an 800 cm 3 container to pulverize at 1348 rpm and a peripheral speed of 5 m/s. Using ZrO 2 beads with a particle diameter of 0.5 mm, they were mixed at a ratio of 113 g of ethanol, 675 g of ZrO 2 , and 2 80 g of intermediate powder, and pulverized for 60 minutes. After pulverization, powder A2 was obtained.

將50 g粉末A、200 g純水、10 g聚乙烯醇(富士膠片和光純藥股份有限公司製造,PVA-3500)之10wt%水溶液、及聚二醇(富士膠片和光純藥股份有限公司製造,PEG-400)混合,獲得漿料B2。50 g of powder A, 200 g of pure water, 10 g of a 10 wt % aqueous solution of polyvinyl alcohol (manufactured by Fujifilm Wako Pure Chemical Industries, Ltd., PVA-3500), and polyglycol (manufactured by Fujifilm Wako Pure Chemical Industries, Ltd. , PEG-400) mixed to obtain slurry B2.

利用實施例1記載之方法對漿料B2進行噴霧乾燥,獲得前驅物粉末2。The slurry B2 was spray-dried by the method described in Example 1 to obtain the precursor powder 2.

<步驟3> 將前驅物粉末2填充於煅燒用容器(AS ONE股份有限公司製造,煅燒晶舟No.5)中,再放入管狀爐(MOTOYAMA股份有限公司製造,DSPSH28)中,用Ar置換管狀爐內之氣體,對前驅物粉末進行煅燒。將煅燒程式設定為如下:歷時12.2小時自0℃升溫至1220℃,於1220℃下保持5小時,再歷時12.2小時自1220℃降溫至0℃。煅燒程式作動過程中,以100 mL/分吹入Ar氣體。煅燒後,獲得實施例2之粒子群。 <Step 3> Fill the precursor powder 2 into a calcination container (manufactured by AS ONE Co., Ltd., calcined crystal boat No. 5), and then put it into a tubular furnace (manufactured by MOTOYAMA Co., Ltd., DSPSH28), and replace the inside of the tubular furnace with Ar. gas to calcine the precursor powder. The calcination program was set as follows: the temperature was raised from 0° C. to 1220° C. over 12.2 hours, kept at 1220° C. for 5 hours, and then the temperature was lowered from 1220° C. to 0° C. over 12.2 hours. During the operation of the calcination program, Ar gas was blown in at 100 mL/min. After calcination, the particle group of Example 2 was obtained.

<比較例1> 利用實施例1記載之方法獲得原料混合粉。將1000 g上述原料混合粉填充於煅燒用容器(NIKKATO股份有限公司製造,SSA-T SAYA 150方形)中,再放入電爐(NEMS股份有限公司製造,FD-40×40×60-1Z4-18TMP)中,用Ar置換電爐內之氣體,對原料混合粉進行煅燒。將煅燒程式設定為如下:歷時15小時自0℃升溫至1500℃,於1500℃下保持3小時,再歷時15小時自1500℃降溫至0℃。煅燒程式作動過程中,以2 L/分吹入Ar氣體。煅燒後,獲得粉末C。 <Comparative example 1> Utilize the method described in embodiment 1 to obtain raw material mixed powder. Fill 1000 g of the above-mentioned raw material mixed powder into a container for calcination (manufactured by NIKKATO Co., Ltd., SSA-T SAYA 150 square), and then put it into an electric furnace (manufactured by NEMS Co., Ltd., FD-40×40×60-1Z4-18TMP ), the gas in the electric furnace is replaced with Ar, and the raw material mixed powder is calcined. The calcination program was set as follows: the temperature was raised from 0° C. to 1500° C. over 15 hours, kept at 1500° C. for 3 hours, and the temperature was lowered from 1500° C. to 0° C. over 15 hours. During the operation of the calcination program, Ar gas was blown in at 2 L/min. After calcination, powder C is obtained.

向塑膠製之1 L聚乙烯瓶(外徑97.4 mm)中加入1000 g之2 mm ϕ氧化鋯球、及161 g之粉末C,將1 L聚乙烯瓶放置於球磨機台座上,以轉速60 rpm進行4小時球磨機粉碎,從而粉碎中間物粉末。粉碎後,獲得粉末D。將粉碎後之粉末撒於45 μm之網眼篩上,將通過篩之粉末設為比較例1之粉末。 Add 1000 g of 2 mm ϕ zirconia balls and 161 g of powder C to a plastic 1 L polyethylene bottle (outer diameter 97.4 mm), place the 1 L polyethylene bottle on the ball mill stand, and rotate at 60 rpm Ball mill pulverization was performed for 4 hours to pulverize the intermediate powder. After pulverization, powder D was obtained. The pulverized powder was sprinkled on a 45 μm mesh sieve, and the powder that passed through the sieve was defined as the powder of Comparative Example 1.

<比較例2> 將Ti 2O 3(高純度化學研究所股份有限公司製造,<45 μm)設為比較例2之粉末。 <Comparative Example 2> Ti 2 O 3 (manufactured by High Purity Chemical Laboratory Co., Ltd., <45 μm) was used as the powder of Comparative Example 2.

將所得之實施例1~2及比較例1~2之各測定之結果彙總於表1中。Table 1 summarizes the results of each measurement in Examples 1-2 and Comparative Examples 1-2 obtained.

[表1]    |dA(T)/dT| T=150℃ (ppm/℃) S BET/S PSD 空隙率 (%) D50 (μm) ∆L(100℃) /L(30℃) (%) 實施例1 40 11.0 4.4 11 0.07 實施例2 36 4.9 2.5 11 0.08 比較例1    2.5 1.8 16 0.10 比較例2    3.3 0.4 27 0.10 [Table 1] |dA(T)/dT| T=150℃ (ppm/℃) S BET /S PSD Porosity (%) D50 (μm) ∆L(100℃) /L(30℃) (%) Example 1 40 11.0 4.4 11 0.07 Example 2 36 4.9 2.5 11 0.08 Comparative example 1 2.5 1.8 16 0.10 Comparative example 2 3.3 0.4 27 0.10

根據實施例之粒子群,降低了固體組合物中之尺寸變化率。即,實施例之粒子群係熱膨脹控制特性優異之粒子群。According to the particle group of the embodiment, the rate of dimensional change in the solid composition is reduced. That is, the particle group of the embodiment is a particle group excellent in thermal expansion control characteristics.

2:晶體 4:粒子 6:閉氣孔 2: crystal 4: Particles 6: closed air hole

圖1係本發明之一實施方式之粒子之剖面模式圖。Fig. 1 is a schematic cross-sectional view of particles according to one embodiment of the present invention.

2:晶體 2: crystal

4:粒子 4: Particles

6:閉氣孔 6: closed air hole

Claims (14)

一種粒子群,其中各粒子含有複數個晶體,該粒子群滿足以下要件1,且滿足以下要件2及要件3之至少一者; 要件1:於-200℃~1200℃中之至少一個溫度T1下,|dA(T)/dT|為10 ppm/℃以上; A為(上述晶體之a軸(短軸)之晶格常數)/(上述晶體之c軸(長軸)之晶格常數),各晶格常數係由上述粒子群之X射線繞射測定獲得; 要件2:S BET/S PSD為4.0~20.0; S BET為藉由BET法所獲得之上述粒子群之比表面積; S PSD為假想粒子群之比表面積,上述假想粒子群具有與藉由雷射繞射散射法所獲得之上述粒子群之體積基準之粒徑分佈相同之粒徑分佈、及與上述粒子群之真密度相同之真密度,且各上述假想粒子具有真球之形狀; 要件3:下式所定義之空隙率為2.0~20.0%; 空隙率(%)=(1-上述粒子群之表觀密度/上述粒子群之真密度)×100。 A particle group, wherein each particle contains a plurality of crystals, and the particle group satisfies the following requirement 1, and at least one of the following requirements 2 and 3; Requirement 1: At least one temperature T1 among -200°C to 1200°C , |dA(T)/dT| is above 10 ppm/°C; A is (lattice constant of the a-axis (short axis) of the above-mentioned crystal)/(lattice constant of the c-axis (long axis) of the above-mentioned crystal), Each lattice constant is obtained by X-ray diffraction measurement of the above-mentioned particle group; Requirement 2: S BET /S PSD is 4.0 to 20.0; S BET is the specific surface area of the above-mentioned particle group obtained by the BET method; S PSD is The specific surface area of the virtual particle group, the virtual particle group has the same particle size distribution as the volume-based particle size distribution of the above-mentioned particle group obtained by the laser diffraction scattering method, and the same as the true density of the above-mentioned particle group True density, and each of the above-mentioned imaginary particles has the shape of a true sphere; Requirement 3: The porosity defined by the following formula is 2.0-20.0%; Porosity (%)=(1-apparent density of the above-mentioned particle group/the above-mentioned particle group True density) × 100. 如請求項1之粒子群,其滿足上述要件1~3之全部。The particle swarm as claimed in claim 1 satisfies all of the above-mentioned requirements 1-3. 如請求項1或2之粒子群,其中藉由雷射繞射散射法所獲得之上述粒子群之體積基準之粒徑分佈曲線中累積頻度達到50%之徑D50為1~100 μm。The particle group according to claim 1 or 2, wherein the diameter D50 at which the cumulative frequency reaches 50% in the volume-based particle size distribution curve of the above-mentioned particle group obtained by the laser diffraction scattering method is 1-100 μm. 如請求項1至3中任一項之粒子群,其中上述晶體為金屬氧化物。The particle group according to any one of claims 1 to 3, wherein the above-mentioned crystals are metal oxides. 如請求項4之粒子群,其中上述金屬氧化物為含有具有d電子之金屬之金屬氧化物。The particle group according to claim 4, wherein the metal oxide is a metal oxide containing a metal having d electrons. 如請求項4或5之粒子群,其中上述金屬氧化物為含有鈦之金屬氧化物。The particle group according to claim 4 or 5, wherein the metal oxide is a metal oxide containing titanium. 如請求項6之粒子群,其中上述含有鈦之金屬氧化物為TiO x(x=1.30~1.66)。 The particle group according to claim 6, wherein the metal oxide containing titanium is TiOx (x=1.30-1.66). 一種組合物,其含有如請求項1至7中任一項之粒子群。A composition comprising the particle group according to any one of claims 1 to 7. 如請求項8之組合物,其具有粉體形態。The composition as claimed in item 8, which has a powder form. 如請求項8之組合物,其進而包含基質材料。The composition according to claim 8, further comprising a matrix material. 如請求項8之組合物,其進而包含未硬化之硬化性樹脂。The composition according to claim 8, further comprising an uncured curable resin. 一種成形體,其係如請求項1至7中任一項之粒子群或者如請求項8或9之組合物之成形體。A shaped body, which is the particle group according to any one of claims 1 to 7 or the shaped body of the composition according to claim 8 or 9. 一種如請求項1至7中任一項之粒子群之製造方法,其包括: 步驟1,煅燒原料而獲得中間物;步驟2,粉碎上述中間物而獲得前驅物;及步驟3,煅燒上述前驅物,且上述步驟1及步驟3中之煅燒溫度為1000~1300℃。 A method for manufacturing the particle swarm according to any one of claims 1 to 7, comprising: Step 1, calcining the raw material to obtain an intermediate; step 2, pulverizing the above intermediate to obtain a precursor; and step 3, calcining the above precursor, and the calcination temperature in the above step 1 and step 3 is 1000-1300°C. 如請求項13之方法,其於上述步驟2與步驟3之間進而包括藉由噴霧乾燥法將上述前驅物顆粒化而獲得顆粒狀前驅物之步驟。The method according to claim 13, further comprising the step of granulating the precursor by spray drying to obtain the granular precursor between the above step 2 and step 3.
TW111118831A 2021-05-24 2022-05-20 Particle group, composition, molded article, and particle group production method TW202248137A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021-086959 2021-05-24
JP2021086959A JP2022180056A (en) 2021-05-24 2021-05-24 Particle group, composition, molded article, and method for producing particle group

Publications (1)

Publication Number Publication Date
TW202248137A true TW202248137A (en) 2022-12-16

Family

ID=84230044

Family Applications (1)

Application Number Title Priority Date Filing Date
TW111118831A TW202248137A (en) 2021-05-24 2022-05-20 Particle group, composition, molded article, and particle group production method

Country Status (4)

Country Link
JP (1) JP2022180056A (en)
CN (1) CN117460700A (en)
TW (1) TW202248137A (en)
WO (1) WO2022249967A1 (en)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002273236A (en) * 2001-03-22 2002-09-24 Mitsui Kozan Material Kk Method for manufacturing photocatalyst
KR101013223B1 (en) * 2010-09-06 2011-02-10 주식회사 정관 A glass-ceramics having a negative coefficient of thermal expansion and method thereof
JP7346115B2 (en) * 2019-07-12 2023-09-19 住友化学株式会社 solid composition

Also Published As

Publication number Publication date
CN117460700A (en) 2024-01-26
JP2022180056A (en) 2022-12-06
WO2022249967A1 (en) 2022-12-01

Similar Documents

Publication Publication Date Title
JP7397590B2 (en) Powder compacts and filler powders
KR101136665B1 (en) Composite dielectric material
JP2022040270A (en) Powder for ceramic shaping, ceramic shaped article, and method for manufacturing the same
WO2020179662A1 (en) Hexagonal boron nitride powder, resin composition, resin sheet, and method for producing hexagonal boron nitride powder
KR102498656B1 (en) Dielectric ceramic material, method for manufacturing same, and composite dielectric material
JP4999091B2 (en) Method for producing zirconium tungstate-silicon oxide composite sintered body
JP7346115B2 (en) solid composition
TW202248137A (en) Particle group, composition, molded article, and particle group production method
JP2005306662A (en) Method for producing dielectric ceramic powder, and method for producing composite dielectric material
WO2021200507A1 (en) Titanium oxide, powder, powder composition, solid composition, liquid composition, and molded body
CN115335328B (en) Particle, powder composition, solid composition, liquid composition, and molded article
US20230128381A1 (en) Particle group, powder composition, solid composition, liquid composition, and compact
JP6903538B2 (en) Dielectric composite
WO2021200319A1 (en) Titanium compound, powder, and method for manufacturing titanium compound
WO2021010096A1 (en) Powder and solid composition
JP7486666B2 (en) Heat dissipation member and heat sink
Zhou et al. Preparation of high thermal conductivity vat photopolymerization used UV-curable resin synergistically enhanced by silicon nitride and boron nitride
JP2005015694A (en) Dielectric-resin composite material and method for producing the same
Joseph et al. Influence of Photo-initiator concentration on photoactivation of composites prepared with LTCC and silver powders for DLP based 3D printing and their characterization