TW202244317A - Electrochemical assembly for forming semiconductor features - Google Patents

Abstract

Methods, apparatuses, and systems for forming deposited features on workpieces are provided herein. Generally, the techniques herein employ a deposition head to define an electrical field that facilitates electrochemical deposition. Other systems and controllers can be employed, which can assist in aligning or positioning the deposition head in proximity to a workpiece and controlling the size and location of the deposited feature.

Description

Electrochemical assembly for forming semiconductor features

The present disclosure relates to substrate processing systems, and more particularly to electrochemical assemblies that provide semiconductor electrical interconnects.

The prior art description provided here is for the purpose of generally presenting the context of the disclosure. The work achievements of the inventors listed in this case, the scope of the prior art paragraphs so far, and the implementation forms that may not qualify as prior art at the time of application are not explicitly or implicitly recognized as prior art against the content of the disclosure.

Generally, it is an aspect of semiconductor processing performed using various semiconductor tools to deposit metal to form semiconductor interconnects. The semiconductor tool may include a metal deposition tool (e.g., a physical vapor deposition (PVD) tool, a chemical vapor deposition (CVD) tool, or an atomic layer deposition (ALD) tool to provide a seed metal layer and/or a bulk metal layer. ), photoresist deposition tool (for example, spin coater or dry photoresist deposition tool), lithography tool (for example, photolithography tool), photoresist development tool, descum or ashing tool (for example, photoresist descum tools), electroplating tools (eg, electroplating tools), photoresist stripping tools, and/or metal etching tools (eg, wet metal etching tools).

These semiconductor tools can be used in combination for damascene processing (additive processing to deposit metal), or through photoresist processing and metallization. Damascene processing is often used for higher aspect ratio through-silicon via (TSV) interconnects, as well as levels greater than 3 with sub-0.5 micron (μm) fluidic holes and line interconnects. Through photoresist processing and metallization are often used for package interconnect formation (redistribution layers, copper pillar bumps, controlled collapse die connectors (C4) plated solder bumps) with dimensions greater than about 1 μm and about less than 3 layers Wait).

In addition to the desired plating of current-carrying metal interconnect lines/vias, each of these semiconductor tools and processes employs a multitude of ancillary processes and hardware (photoresist coating, lithography, photoresist development, photoresist stripping and cleaning, chemical mechanical polishing, wet etching).

Damascene semiconductor processing, including the formation of through-silicon vias (TSVs), can form recessed cavities in dielectric films such as low-K silicon dioxide (SiO ₂ ). Etched areas are defined in the dielectric film using photolithography tools to provide a mask (eg, metal film). This step is followed by PVD metallization of the exposed surfaces with a PVD tool to coat the external and internal surfaces with a seed layer and a barrier layer (typically copper (Cu) and tantalum (Ta), titanium (Ti), Titanium Nitride (TiN) or Tantalum Nitride (TaN)).

PVD metallization usually has high sidewall coverage selectivity, so that the edge walls of the damascene structure (especially at the bottom of the structure) are fully covered, allowing complete electrical connection and plating bottom-up filling. The recessed structures are then plated "bottom up" and chemical mechanical polishing (CMP) of the surface can be performed using metal etch tools to leave isolated lines/vias below the surface typically.

Through photoresist processing and metallization is used to form bumps and/or lines that, at the end of the process, result in interconnect structures above the surface typically. Through photoresist processing and metallization typically involves the use of metal deposition tools to seed exposed surfaces (eg Cu/2000 Å blanketed PVD metal layer over Ta/200 Å). Next, the photoresist deposition tool can be used to apply a photoresist film or a wet photoresist layer (by spin coater where the photoresist layer is then dried/cured). The photoresist layer can be toned or toned (exposed areas are removed or retained after development). Next, a photolithography tool is used in a lithography step to expose the photoresist. Next, a photoresist developing tool is used to selectively remove the photoresist by immersion in a developing solution appropriate for the particular type and chemical formulation of the photoresist. After development, a descum tool may be used to remove residual photoresist remaining at the base of the features, which may be removed by exposing the wafer surface to an oxygen plasma (sometimes referred to as "scum removal"). step"). Typically, during this step, the oxygen end groups replace the hydrophobic organic end groups on the resist surface, making the organic resist film more hydrophilic. The wafer then has a set of photoresist openings down to the seed layer, and the plating tools plate and fill these openings to form bumps, lines, thick solder films (which reflow to form balls), or on copper A thinner layer of solder on top of the bumps to form copper/solder (eg Cu/SnAg) pillars.

Various embodiments herein relate to methods, apparatus and systems for electrochemical deposition. The techniques described herein enable photoresist-free formation of metal features, substantially simplifying the processing scheme used to form such features and minimizing associated capital and processing costs. In certain embodiments, the techniques herein use a deposition head (eg, a print head) to define an electric field that promotes electrochemical deposition. Certain embodiments optionally use a fluid distribution head (FDH) to provide a source of metal ions that can be deposited. Systems and controllers can be used that can facilitate alignment or positioning of the deposition head and/or FDH adjacent to the workpiece, replenish electrolyte near the deposition head, and/or control deposited features (e.g., printed Features) size and location.

Certain aspects of the present disclosure relate to assemblies that may be further characterized by: (a) a deposition head comprising an array of anode pixels disposed on a proximal surface of the deposition head, wherein the array of anode pixels comprises a plurality of inert electrodes, and a plurality of control devices configured to supply current to select one or more of the plurality of inert electrodes; (b) a gap measurement system comprising one or more sensing elements, wherein the gap measurement system is configured measuring the distance between the proximal surface of the deposition head and the surface of the workpiece by measuring impedance of a region between at least one of the one or more sensing elements and a lower portion of the workpiece; and (c) a controller connected to the deposition head and configured to drive the supply of current and/or voltage to the array, or to supply a potential difference between the workpiece and the array, thereby forming one or more of the anodic pixels The electric field defined by the multiple.

In some embodiments, the assembly additionally includes an alignment system comprising: a plurality of fine actuator elements attached to the deposition head, wherein the fine actuator elements are configured to The proximal surface is positioned within a first gap distance to the surface of the workpiece and/or such that the proximal surface of the deposition head lies on a plane parallel to the surface of the workpiece. In some embodiments, the alignment system is configured to control motion along five axes, including three mutually perpendicular linear axes, and two rotational axes, wherein the two rotational axes are oriented such that the deposition head The planarity can be adjusted relative to the workpiece. In some embodiments, the alignment system is configured to move along the The two rotational axes control the movement.

In some embodiments, at least one of the one or more sensing elements is disposed on the proximal surface of the deposition head and is electrically connected to circuitry for determining whether the sensing element is related to the surface of the workpiece the distance between. In some embodiments, at least one of the one or more sensing elements is electrically coupled to the power supply circuit and the sensing circuit. In some embodiments, the at least one sensing element includes one of the plurality of inert electrodes.

In some embodiments, the controller is configured to supply the current and/or the voltage, or to supply the potential difference, in a manner to provide a deposited feature, and wherein the deposited feature is through a single anode pixel or through a plurality of anodes Pixels are deposited. In some cases, the controller is configured to cause: supply of the current, the voltage, or the potential difference to a group of connected anode pixels to define the shape or size of the deposited feature.

In some embodiments, the assembly additionally includes a power supply circuit electrically coupled to the plurality of inertial electrodes, wherein the power supply circuit is configured to apply a first potential and/or current so that the inertial electrodes act as an anode, and applying a second potential and/or current to make the inert electrodes act as cathodes relative to the auxiliary electrodes. In some implementations, the auxiliary electrode includes a metal plated onto the inert electrodes.

In some embodiments, the gap measurement system is configured to measure the impedance of the region between the at least one sensing element and the lower portion of the workpiece by applying an input signal wave to the at least one sensing element.

The input signal wave may have an amplitude of about 1 to 100 millivolts. The input signal wave may have a frequency of about 100 kHz to 10 MHz. The input signal wave may have a frequency of about 1 MHz to 10 MHz.

In some embodiments, the controller is further configured to use the distance measured from the gap measurement system to maintain a distance between the proximal surface of the deposition head and the surface of a growing deposited feature on the workpiece. distance between. In certain embodiments, the controller is further configured to maintain a constant distance between the proximal surface of the deposition head and the surface of the growing deposited feature on the workpiece. In some implementations, the controller and/or the gap measurement system uses an empirical model that correlates impedance information between the proximal surface of the deposition head and the growing deposited feature on the workpiece The distance between the surfaces of .

In some embodiments, the plurality of idle electrodes are recessed within the plurality of holes in the insulating workpiece to allow electroplating of metal from the auxiliary electrode onto the plurality of idle electrodes and deelectroplating from the plurality of idle electrodes onto the workpiece. In some implementations, the holes in the insulating workpiece confine the location of the metal that is plated onto the inert electrodes.

Certain aspects of the disclosure pertain to methods of electroplating a plurality of laterally spaced features on a workpiece. The method can be characterized by the following operations: (a) positioning the deposition head in a first position, and while in the first position, electroplating metal onto the plurality of inert electrodes of the plurality of anode pixels of the deposition head; (b) Before or after (a), measuring a gap between the deposition head and the workpiece, or another substrate at the location of the workpiece, wherein measuring the gap includes determining the impedance of an electrolyte adjacent the gap; and (c) Using the gap measured from (b), the deposition head is positioned in a second position adjacent the workpiece, and while in the second position, metal is electroplated from the plurality of inert electrodes onto the workpiece to at least partially form The lateral separation features.

In some embodiments, the method additionally includes: (d) determining that the lateral separation features are not fully formed; and (e) repeating operations (a), (b) and (c). In some embodiments, the method additionally includes delivering electrolyte between the deposition head and the workpiece after positioning the deposition head at the first position and prior to electroplating metal onto the plurality of inert electrodes.

In some embodiments, the method additionally includes moving the deposition to a third location adjacent the workpiece and plating an additional plurality of features on the workpiece. In some embodiments, the method additionally includes etching a portion of the conductive seed layer on the workpiece.

In some embodiments, measuring the gap between the workpiece and the deposition head includes measuring gaps at three or more spaced locations that are not in a line. In some implementations, positioning the deposition head at the second position adjacent the workpiece includes repositioning the deposition head so that the workpiece and the deposition head are aligned on parallel planes.

In some embodiments, positioning the deposition head at a second position adjacent to the workpiece includes actuating one or more of a plurality of fine actuator elements attached to the deposition head to cause the deposition head to The proximal surface of the workpiece is positioned within a first gap distance to the surface of the workpiece, and/or the proximal surface of the deposition head is positioned on a plane parallel to the surface of the workpiece. In some implementations, positioning the deposition head at the second position adjacent the workpiece includes controlling movement along one or more of five axes, including three mutually perpendicular linear axes, and Two axes of rotation.

The following sections of this Summary identify certain alternative aspects of the disclosure. In a first such aspect, the present disclosure encompasses an assembly (eg, a deposition head assembly or a printhead assembly) comprising: a deposition head (eg, a printhead) including at least one anode disposed on a proximal surface of the deposition head; and Fluid Distribution Head (FDH). In some embodiments, the deposition head is at least partially surrounded by, or incorporated into, a FDH, wherein the FDH includes a plurality of ports in fluid communication with a proximal surface of the FDH. In other embodiments, the port is configured to supply and/or remove electrolyte proximate to at least one anode.

In a second aspect, the present disclosure encompasses components including: a gap measurement system including one or more sensing elements (eg, any described herein). In some embodiments, the gap measurement system is configured to measure the distance between the proximal surface of the deposition head or the proximal surface of the FDH to the surface of the workpiece.

In a third aspect, the present disclosure includes an assembly (e.g., a deposition head assembly or a print head assembly) including: a deposition head (e.g., a print head) including an array of anode pixels; an FDH configured to surround the array; and a gap measurement A system comprising one or more sensing elements, wherein the gap measurement system is configured to measure a distance between a proximal surface of the deposition head or a proximal surface of the FDH and a surface of the workpiece. In some embodiments, the array is disposed on the proximal surface of the deposition head, wherein each anode pixel includes a dummy electrode, an active electrode, or an inert electrode. In other embodiments, the FDH includes a plurality of ports in fluid communication with the proximal surface of the FDH, wherein the ports are configured to supply and/or remove electrolyte proximate to the anode pixel.

In a fourth aspect, the present disclosure includes an assembly (e.g., a deposition head assembly or a print head assembly) including: a deposition head (e.g., a print head or any described herein); an FDH (e.g., any of the or) configured to surround the array; a gap measurement system (eg, any described herein) including one or more sensing elements; and an alignment system. In some embodiments, an alignment system includes: a plurality of fine actuator elements attached directly or indirectly to the deposition head; and a mounting assembly attached directly or indirectly to the FDH. In a particular embodiment, the fine actuator elements are configured to position the array within a first gap distance to the surface of the workpiece and/or to bring the proximal surface of the deposition head coplanar with the surface of the workpiece. In other embodiments, the mounting assembly includes a coarse actuator to vertically position the FDH within the second clearance distance to the surface of the workpiece.

In a fifth aspect, the present disclosure includes a method of providing deposited features (eg, printed features), the method comprising: receiving a workpiece including a seed layer disposed on a surface thereof, wherein the seed layer is Conductive; positioning a deposition head (e.g., a print head or any of those described herein) near the workpiece surface; delivering electrolyte to the anode pixels through an FDH configured to surround the deposition head; and activating one or more anode pixels , thereby providing deposited features (eg, printed features) at the first location. In some embodiments, the deposition head includes an array of anode pixels, and the FDH is configured to surround the array.

In some embodiments, the positioning includes: determining the distance between the proximal surface of the deposition head and the surface of the workpiece; and aligning the proximal surface of the deposition head within a first gap distance to the workpiece surface and/or The proximal surface of the deposition head is made coplanar with the surface of the workpiece. In a specific embodiment, the ratio of the first gap distance to the array size is from 0.1:1 to 1:0.5. In other embodiments, the array dimension is the distance between two anode pixels, or the feature dimension (eg, width, height, or diameter) of a single anode pixel.

In some embodiments, said positioning includes (eg, prior to said aligning): vertically positioning a proximal surface of the FDH within a second clearance distance to a workpiece surface. In certain embodiments (eg, during said delivery), the first gap (between the proximal surface of the deposition head and the workpiece surface) is smaller than the second gap (between the proximal surface of the FDH and the workpiece surface).

In some embodiments, the delivering includes: flowing electrolyte through two or more ports disposed within the FDH; and removing electrolyte through one or more ports disposed within the FDH.

In some embodiments, the activation includes supplying current and/or voltage to the array, or supplying a potential difference between the workpiece and the deposition head (or array thereof). In other embodiments, the activating includes: supplying current, voltage or potential difference to an anode pixel or a plurality of anode pixels. In yet other embodiments, the supplying includes supplying a current, voltage or potential difference to groups of adjacent anode pixels to define the shape or size of the deposited features (eg, printed features).

In some embodiments, the method further includes (e.g., after said activation): moving the deposition head to a second location on the workpiece surface; further delivering the electrolyte to the second location via FDH; and further The one or more anode pixels are activated, providing further deposited features (eg, further printed features) at the second location. In certain embodiments (eg, after said activating and/or said further activating), the method further comprises: etching the crystal lacking the deposited feature and the further deposited feature at the first and second locations, respectively. part of the seed layer.

In any of the embodiments herein, the deposition head is a print head. In other embodiments, the assembly is a printhead assembly including one or more printheads.

In any of the embodiments herein, the array is disposed on the proximal surface of the deposition head.

In any of the embodiments herein, an anode or an anode pixel includes a dummy electrode, an active electrode, or an inert electrode.

In any of the embodiments herein, the deposition head includes an inner anode, an insulating substrate, and an inner chamber formed between the inner anode and the insulating substrate; wherein the insulating substrate includes a plurality of holes; and wherein each hole forms a dummy electrode.

In any of the embodiments herein, the deposition head comprises a plurality of inert electrodes, and a plurality of control means configured to supply current to the selected anode pixel or the selected plurality of anode pixels.

In any of the embodiments herein, the deposition head and the FDH may be directly or indirectly attached.

In any of the embodiments herein, the proximal surface of the deposition head extends past the proximal surface of the FDH.

In any of the embodiments herein, a plurality of ports (eg, of a FDH) surround the periphery of the deposition head. In some embodiments, an assembly (eg, a deposition head assembly or a print head assembly) further includes a valve associated with each port, wherein each valve is configurable to supply or remove pressure or flow through the port associated with each valve.

In any of the embodiments herein, the assembly (e.g., a deposition head assembly or a print head assembly) further includes: a plurality of deposition heads (e.g., a plurality of print heads) and a plurality of fluid distribution heads, wherein each FDH is configured to surround a deposition head .

In any of the embodiments herein, an assembly (eg, a deposition head assembly or a print head assembly) further includes: a plurality of deposition heads (eg, a plurality of print heads), wherein the FDH is configured to surround each of the plurality of deposition heads.

In any of the embodiments herein, an assembly (eg, a deposition head assembly or a print head assembly) includes a gap measurement system. In some embodiments, a gap measurement system includes one or more sensing elements (eg, any described herein). In other embodiments, the gap measurement system is configured to measure the distance between the proximal surface of the deposition head or the proximal surface of the FDH to the surface of the workpiece. In still other embodiments, the FDH includes a plurality of ports in fluid communication with a proximal surface of the FDH, wherein the ports are configured to supply and/or remove electrolyte proximate to the array and/or anode pixels.

In any of the embodiments herein, one or more sensing elements are disposed on the proximal surface of the deposition head and are electrically connected to circuitry that determines the distance between the sensing elements and the workpiece surface. In some embodiments, the sensing element includes one of the plurality of anode pixels.

In any of the embodiments herein, an assembly (eg, a deposition head assembly or a print head assembly) further includes an alignment system. In some embodiments, the alignment system includes a plurality of fine actuator elements attached directly or indirectly to the deposition head, wherein the fine actuator elements are configured to position the array at a first relative to the surface of the workpiece. within the gap distance, and/or make the proximal surface of the deposition head coplanar with the surface of the workpiece. In other embodiments, the alignment system further includes: a mounting assembly attached directly or indirectly to the FDH, wherein the mounting assembly further includes a coarse actuator to vertically position the FDH at a second clearance distance to the surface of the workpiece Inside.

In any of the embodiments herein, the assembly (e.g., a deposition head assembly or a print head assembly) further includes: a controller (e.g., a print head controller) connected to the deposition head (e.g., a print head), wherein the controller is Configured to drive: supply current and/or voltage to the array, or supply a potential difference between the workpiece and the array, thereby forming an electric field defined by one or more of the anode pixels. In some embodiments, the supply provides deposited features (eg, printed features), wherein the deposited features are deposited (eg, printed) through a single anode pixel or a plurality of anode pixels. In other embodiments, the controller is configured to drive: supply current, voltage or potential difference to groups of adjacent anode pixels to define the shape or size of the deposited feature.

In any of the embodiments herein, the assembly further includes: a fluid controller coupled to the FDH, wherein the fluid controller is configured to drive: electrolyte flow into and/or out of the plurality of ports, thereby replenishing reactants and removing The reaction product formed between the array and the workpiece.

In the following description, several specific details are set forth to provide a thorough understanding of the presented embodiments. The disclosed embodiments may be practiced without some or all of these specific details. In other instances, well known process operations have not been described in detail so as not to unnecessarily obscure the disclosed embodiments. While the disclosed embodiments will be described in conjunction with specific embodiments, it will be understood that these specific embodiments are not intended to limit the disclosed embodiments.

Systems and methods according to the present disclosure relate to efficient, high-rate, two-dimensional (2D) (or single layer) and/or three-dimensional (3D) (multi-level) metal printing processes utilizing semiconductor-interconnect-scale Resolution manufactures interconnects at lower cost, using less equipment, and with higher throughput. More specifically, the systems and methods described herein can be performed without the usual steps, equipment, and materials for photoresist lithography, development, dielectric etching, cleaning, and/or other steps described above.

Systems and methods according to the present disclosure relate to forming IC-scale metal interconnect wires using a direct electrochemical deposition process. In some implementations, electrochemical deposition is used to form wafer-level packaging features. Metal interconnect wires are deposited on the substrate including the metal-seed layer by supplying a metal-cation containing electrolyte in the gap between the workpiece and the deposition head.

Three-dimensional (3D) electroprinting (or 3DEP) is a process that uses micron-sized anodes to grow electroplatable metal features directly on full-area metallized (or seeded) workpieces. The growth features are formed stepwise and assume a shape and size defined by the local electrode shape, the proximity of the electrode to the surface, and various processing conditions and the composition of the electrolyte. The hardware and processing herein can allow for the generation of plated interconnect features for packaging applications, wherein the hardware and processing removes the need for complex photolithography processing hardware and processing steps. Applications in which the hardware and processes disclosed herein can be performed include depositing interconnect bumps and lines of copper, barrier metals such as nickel and cobalt, and solder balls of materials such as tin and tin-silver alloys or Lidding film. Other materials and deposition features are described herein. Certain hardware and process designs may not be sufficient to generate conditions suitable for forming defect-free, large-scale, and uniformly deposited structures on package feature scales. In particular embodiments, the components, devices, systems and processes herein overcome these deficiencies.

For some applications, conventional semiconductor packaging processing uses a series of photolithography-related hardware and processing steps to produce a plateable surface through photoresist (Figure 1). In an exemplary embodiment, there are at least 8 sequential operations to create interconnects or connection bumps, as shown by operations 101-108.

In FIG. 1, the method begins at operation 101, where a conductive seed layer is deposited on a substrate. This deposition can be performed in physical vapor deposition equipment, atomic layer deposition equipment or chemical vapor deposition equipment. Next, the substrate is transferred to a photoresist deposition device or a spin coater; in operation 102, a photoresist layer is formed on the seed layer. For example, the photoresist can be formed via a wet processing method (eg, spin coating), or the photoresist can be formed via a dry process (eg, coating a roll of preformed photoresist material over the substrate). form.

After the photoresist layer is formed, the substrate is transferred to a photoresist patterning device or lithography tool, where it is patterned in operation 103 by exposing the photoresist layer to specific light conditions. In operation 104, the substrate is transferred to a photoresist (PR) development apparatus or PR development tool, where the pattern exposed on the substrate is developed. In one example, the photoresist is developed via a wet chemical process that involves exposing the substrate to a solution with a dissolved salt (eg, potassium carbonate in water). Together, these patterning operations form recessed features in the photoresist layer. These recessed features define spaces where metal will subsequently be deposited.

Next, the substrate is transferred to a plasma etch apparatus or a descum/ashing tool; at operation 105, a descum process is performed to remove excess photoresist material from the bottom of the feature. The desmear process typically involves exposure to an oxygen-containing plasma that is used to burn off excess photoresist at the bottom of the feature.

Next, the substrate is transferred to a plating apparatus or plating tool; at operation 106, metal is plated (eg, via electroplating or electroless plating) into the features defined in the photoresist layer. Next, the substrate is transferred to a photoresist stripping device or tool; in operation 107, the photoresist layer is stripped from the substrate. The photoresist can be etched by dry plasma etching techniques (for example, exposing the substrate to an oxygen-containing plasma), or by wet techniques (for example, exposing the substrate to a photoresist solvent to dissolve or swell the photoresist film, which can then be used high flow, ultrasonic energy, or other methods to remove the photoresist) and stripped. After removing the photoresist layer, the substrate is transferred to a chemical etch apparatus or wet metal etch tool; in operation 108, the seed layer is removed in the areas previously protected by the photoresist layer.

In many cases, the equipment used to perform the process shown in FIG. 1 is distinct equipment, each configured to perform specific operations in the process flow depicted in FIG. , thin-wire interconnects) are complex, time-consuming and expensive. Many different special semiconductor processing equipment are required, each of which must be properly configured for a particular application. The large number of steps and equipment involved in conventional processing flows makes any changes or adjustments to workpiece processing techniques (including, for example, substrate design and layout) difficult because appropriate adjustments must be made to each processing equipment section. This in turn makes switching between manufacturing of one substrate type or substrate design and another difficult. Similarly, running tests, manufacturing standard substrates, etc. is difficult due to the complex process flow and the large amount of equipment involved.

Furthermore, the steps in Figure 1 not only require tooling, but also involve consumption of chemicals/materials; for example, spin-coating step 102 consumes spin-on photoresist. Each of these steps adds to the overall cost of the manufacturing operation, typically measured in $/wafer-through-the-sequence. This sequence will be run once for die-to-die or die-to-substrate bump-attachment. When creating on-die or package substrate interconnects, this sequence can be repeated as multiple interconnect layers are created. Such multi-die-level wiring (often referred to as wafer fan-out (WFO) or redistribution layer (RDL) interconnects) may include multiple horizontal and/or vertical interconnects (eg, as RDLs, wires, pillars, solder bumps, etc.) layers of multiple grains. The sequence of operations 101-108 will have to be repeated for each interconnect layer.

Alternatively, the methods herein can use 3DEP hardware and processing to provide deposited features directly on the surface of the seed/barrier layer. The techniques described herein allow for the formation of fine line interconnects, pads and other similar metallization features without many of the processing and equipment requirements described in FIG. 1 . Thus, the manufacturing process is greatly simplified, the amount of processing equipment is greatly reduced, and the costs associated with processing are similarly reduced (e.g., because fewer steps are involved, and because most of the processing costs are directly related to acquiring the processing equipment related to capital expenditures).

As shown in FIG. 2, the non-limiting method begins at operation 201, where a conductive seed layer is formed on a substrate. The seed layer may be formed via physical vapor deposition (PVD) in a PVD apparatus or tool. As is known in the art to which this invention pertains, alternative methods of forming a seed layer for subsequent plating may be used, such as electroless plating; in some embodiments, electroless plating is activated from electroless (e.g., utilizing tin ion exposure to the substrate) Initially, followed by tin(II) to tin(IV) displacement/activation with a palladium-ion containing electrolyte, this leaves an electrocatalyst of palladium on the substrate surface and allows the metallization of many dielectric materials. Other seed deposition techniques may include chemical vapor deposition (CVD), atomic layer deposition (ALD), or other deposition methods of conductive materials (eg, metals or alloys). Non-limiting materials for the seed/barrier layer include copper (Cu).

The method may further include an operation 202 of performing 3D electrochemical deposition with a solution containing metal ions to be provided in the deposited feature. Any of the practical deposition heads, FDHs or assemblies described herein may be used with this solution for deposition. In some embodiments, electrolyte is provided from a source external to the deposition. For example, conventional electrolyte supply systems can provide electrolyte to the workpiece, and FDH is not used. In various embodiments, a head or other similar movable device is not used to manage electrolyte flow. After depositing the features, the workpiece may be transferred to a chemical etch apparatus or wet metal etch tool; in operation 203 the substrate is chemically etched to remove crystals in the areas between the deposited features. seed layer. In other words, the seed layer is removed in regions that experience relatively lower deposition rates during 3DEP. This etching is used to spatially isolate the metal features from each other.

The methods and apparatus herein can be used to provide deposited features, such as RDLs, for example. Using the appropriate processing of FIG. 1, the conventional method may include the steps of: depositing 101 a seed and/or barrier layer within the via formed in the dielectric layer to provide electrical connections to the pads; Spin-coat 102 photoresist on the seed/barrier layer; pattern 103 the photoresist to define trenches adjacent to the vias (i.e. define a top-to-bottom 2D pattern of RDLs); develop 104 the pattern; Descum 105 is performed to remove any remaining photoresist in the trenches or vias; metal is plated 106 in the trenches and vias to form the RDL features; the remaining photoresist is stripped 107 to release the line portion of the RDL (forming in the PR trench); and etch 108 any accessible seed/barrier layer. Conversely, using the 3DEP apparatus herein and the appropriate processing of FIG. 2, the method may include: depositing 201 a seed and/or barrier layer within the via to provide an electrical connection to the pad; 3D electrochemically deposit 202 RDL features on the surface of the /barrier layer; and etch 203 any accessible seed/barrier layer for electrical isolation. RDL feature contours can be defined by deposition rather than by patterning photoresist.

6 provides a non-limiting deposited feature, the deposited feature is RDL 605, the RDL 605 is thus electrically connected to the seed layer 604; patterned dielectric 603 has a via defined therein; Pad 602 is electrically connected to substrate 601 , seed layer 604 and RDL 605 . It should be noted that the RDL has a via portion defined by patterning the dielectric layer 603, and a trench or line portion defined by electrodeposition (or electroprinting).

The various parts of the processing apparatus can be combined in various ways. In one example, a system includes PVD equipment, DEP equipment, and chemical etch equipment, wherein each equipment is distinct and separate from each other. In another embodiment, one or more of the devices or tools shown in FIG. 2 may be provided in a module of a larger device that performs multiple processes. For example, PVD equipment may be a single equipment, while 3DEP equipment and chemical etching equipment may be provided as modules in a unified processing equipment. In another example, the chemical etching equipment is a separate and distinct equipment, while the PVD equipment and 3DEP equipment are each provided as modules in a larger and unified processing equipment. In yet other embodiments, one or more of the PVD equipment and/or the electroplating equipment may be modified to include the hardware used to perform 3DEP. Many device configurations are possible, and any such combination is considered within the scope of the embodiments herein. Tools so configured may be linear, multi-stage, carousel, conveyor, cluster, or other common tool designs, and the number of modules for each process type may be significantly greater than 1 (e.g., 10), with each process operating in parallel The mix of mod types is optimized based on the productivity/output of the tool. anode

3DEP can be implemented in many ways. In some implementations, 3DEP scales a single microelectrode plating operation to massively parallel processing by using appropriately configured hardware, controls, and processing. One common aspect of the microelectrode plating process is the act of bringing a microscale anode near a conductive (e.g., PVD metallization or electroless deposition metallization) surface of a workpiece and applying a potential difference between the anode and the workpiece ( See Figures 3A-3D). In some implementations, microanodes using consumable (active metal) are not used; repeated replenishment of anode material is not required, and if high aspect ratio structures are formed, plating to Repeat several times on the anode. Thus, in certain embodiments, a dummy distal anode or a dimensionally stable inert anode may be used.

In a dummy anode configuration (the example depicted in FIGS. 3A and 3C ), a non-conductive element (or mask) 303 has a micro-sized opening 304 therein. In use, the electrolyte system resides in and surrounds the pores. The inner chamber 302A is disposed between the non-conductive shield 303 and the inner anode 302B. The internal anode 302B may be an active (corroding metal) anode or an inert anode 302B connected to the positive pole (not shown) of a power source. In use, the inner chamber also contains an electrolyte, thereby providing a conductive medium around the hole 304 , the inner anode 302B and the workpiece 301 . In various embodiments, the dummy anode comprises a sheet electrode having a surface that is substantially larger than the opening of the non-conductive element and is separated from an overlying workpiece to be electrodeposited by the non-conductive element. In particular, openings in the non-conductive element define potential field lines and ionic current distributions that promote electrodeposition of features beneath the openings.

The mask may contain a plurality of openings or through-holes, where the openings or through-holes are spatially and electrically isolated from each other, and in many but not all implementations are not within the body of the non-conductive (or ion-resistant) element Create internal channels. The through hole typically extends in a dimension that is often (but not necessarily) perpendicular to the plated surface of the workpiece (in some embodiments, the non-connected hole is at an angle to the wafer, where the wafer typically parallel to the front surface of the ion-resistant element). In some embodiments, the vias are parallel to each other. These vias differ from 3-D porous networks (in which the channels extend in three dimensions and form interconnected hole structures) in that the vias direct ionic currents parallel to their internal surfaces and (in some cases ) fluid flow is reconstructed and the path of both the current and the fluid flow toward the workpiece surface is straightened. In some embodiments, the non-conductive mask comprises a ceramic material (eg, aluminum oxide, tin oxide, titanium oxide, or a mixture of metal oxides) or a plastic material (eg, polyethylene, polypropylene, polylidene Vinyl fluoride (PVDF), polytetrafluoroethylene, polyvinyl chloride (PVC), polycarbonate, etc.).

Located below the mask 303 and above the workpiece 301 is a small gap 307 between the dummy anode hole opening 305 and the metallization workpiece 301 . The gap can be characterized by an anode dimension (e.g., opening or electrode dimension, such as width, diameter, or other geometric parameter described herein) to the gap distance between the anode and the workpiece surface from about 0.5:1 to 1:0.1 aspect ratio. In some embodiments, the aspect ratio is about 1:1 or less. In certain embodiments, the anode dimension is the largest cross-sectional dimension of the electrode on the face or surface facing the workpiece. When the distance from the proximal surface of the shroud to the workpiece is small, the divergence of both electrical current and fluid flow is locally restricted, transmitted, and aligned with the opening.

During operation, the metallized workpiece was connected to the negative terminal of a power supply (not shown). An electrolyte containing metal ions is placed within this gap, and metal ions are reduced from the electrolyte to plate/deposit/print metal on the workpiece. Within each pore opening, the electric field is localized and collimated, and current is expelled from the pore opening in a manner similar to where the active anode is located (hence the term virtual anode).

In a dimensionally stable anode configuration (example in FIGS. 3B and 3D ), the substrate 318 contains the associated wiring and circuitry to connect, address (select) and power ( wiring not shown). The anode surface can be coated with a dimensionally stable material known in the art and used for large scale inert anodes (eg, a material that is catalytic for the electrolytic oxidation of water and does not corrode). In gap 317 is an electrolyte containing metal ions from which the metal ions are converted to plated metal by reduction at the surface of workpiece 311 .

Inert anodes can be made of corrosion resistant inert materials. An inert anode can electrochemically oxidize components of the electrolyte (eg, water) without oxidizing/corroding itself. Inert type anodes can be exposed to the electrolyte and can be made of dimensionally and oxidatively chemically-stable materials. For example, inert type electrodes can be made of one or more noble metals whose oxidation potential is positive relative to that of water (1.23 V vs. NHE) and other metals that form stable oxide films Positive so that water can be oxidized without significant corrosion of itself. For example, the anode can be made of gold, platinum, palladium, ruthenium, rhodium, niobium, vanadium, and alloys of these materials. Carbon (including various amorphous and graphite forms) can also be used as an inert anode provided the composition of the electrolyte does not cause substantial oxidation.

Dimensionally stable inert anodes provide a predictable and constant distance between the anode surface and workpiece surface over time. However, the use of an inert anode leads to depletion of the supply of metal ions in the electrolyte during deposition.

The two occurring half-reactions can be combined to produce the total reaction in the system, which can be as follows: Workpiece/substrate/cathode reduction: M ^+z +ze ^- → M (1); Slightly inert anodic oxidation: z/ 2*[2H ₂ O → O ₂ +2H ⁺ +2e ^- ] (2); and the overall reaction: M ^+z +zH ₂ O → M+z/2O ₂ +zH ⁺ (3), where M ^+z is Dissolved metal ions (eg, copper, nickel, tin, silver, etc.), which have oxidation state z (eg, z=+2 for divalent copper ions). Without replenishment, metal ions are depleted in this small gap as half-reaction (1) proceeds and metal deposits. A larger gap will allow more metal to be deposited. However, this small gap is maintained so that each split anode is only exposed in the area where it is directly opposite. With a gap greater than about 1:1 (gap distance/anode size), the electric field extends from the element while the plating area is large and can overlap the plating of adjacent anodes.

This anode can be provided within an array, thereby providing an array of anode pixels. As an aside, in some embodiments, the term anode pixel refers to a structure that includes an inert electrode. Wherein the inert electrode acts as an anode during workpiece plating, but acts as a cathode when metal is plated onto the inert electrode from an auxiliary anode. See the description of the two-step process described elsewhere in this article.

A single pixel can define the entire area of the deposited feature, or a collection of pixels can define the area of the deposited feature. In one embodiment, the single deposition area includes a plurality of pixels, which collectively define the shape and size of the single deposition area. In some embodiments, each pixel of an array is randomly actuatable to define different deposition patterns based on the set of pixels actuated at a given time.

Each anode or anode pixel may include an electrode, such as a dummy electrode, an active electrode, or an inert electrode. In addition, each electrode can be of microscopic size (eg, have a size of from about 1 to 1000 μm, or about 10 μm or less). Such dimensions may include radius, diameter, circumference, width, length, height, slope height, major axis, minor axis, perimeter, distance between two opposing vertices of a polygon, gap distance between electrodes, center between electrodes Distance to center, or other cross-sectional geometric parameters.

In one example, the electrodes are microelectrodes. The electrodes themselves may be of any practical geometric shape, such as cones, cylinders, disks, tubes, rectangular prisms, annular cylinders, hemispheres, spheres, triangular prisms, and the like. The cross-section of the electrode (eg, the cross-sectional surface of the electrode closest to the workpiece surface) can have any practical geometric shape, such as circular, oval, square, rectangular, triangular, and the like. The individual anode pixels within the array can have any practical configuration, such as periodic, staggered, or random. Furthermore, an array may include any of a number of different electrode configurations, such as a row of electrodes, or a two-dimensional configuration that may define a rectangle, circle, or the like.

For example, as shown in FIG. 3C , the cross-section of an electrode present on a workpiece is depicted as a circle, and the dimensions of the electrode may include the radius 305a or diameter 305b of the circular opening. In another example, as shown in FIG. 3D , the cross-section of the electrode present on the workpiece is depicted as a rectangle, and the dimensions of the electrode may include a width 319 a and a length 319 b , which may include an idler electrode 319 . Other dimensions may include the gap distance 305c/319c between the two electrodes, and the center-to-center distance 305d/319d between the two electrodes.

The electrodes, including microelectrodes, can be provided with or as a substrate. In one example, the electrodes can be protruding and conductive structures extending from the surface of the insulating substrate. In another example, the electrode may be a planar electrode, wherein the conductive surface is coplanar with the surrounding insulating substrate. In yet another example, the electrode may be a recessed electrode, wherein the conductive surface is recessed into an opening provided in the surrounding insulating substrate. After activating the anode, an electric field is established between the conductive structure/surface of the anode and the grounded workpiece.

In some examples, the electrode is a dummy electrode, wherein an insulating substrate having one or more openings is placed between the inert cathode and the workpiece. By applying a current or voltage between the inert cathode and the grounded workpiece, an electric field is defined by the opening in the insulating surface.

In both cases of dummy and inert anodes, the 3DEP device can be configured to have a very small gap between the anode and the surface. Otherwise, the electric field and current emanating from the source or virtual source location may combine to form a blurred and out-of-focus current distribution pattern, thus resulting in a blurred plating thickness distribution. Accordingly, the system and process can use a controlled degree of proximity focus. Figure 4 shows a series of computer simulation results of the electric field and current distribution for a 1 µm anode source at increasing gap sizes. Anode width to gap ratios greater than about 1:1 have lower resolution and are out of focus. Accordingly, in certain embodiments, the devices, systems and methods herein include a gap distance characterized by anode dimensions (e.g., opening or electrode dimensions, such as width, diameter, or other geometric parameters described herein ) to the gap distance between the anode and the workpiece surface is from about 0.5:1 to 1:0.1. In certain embodiments, the anode dimension (eg, anode width) is the largest cross-sectional dimension on the workpiece-facing face or surface of the electrode. Depending on the anode shape, the anode dimension can be the diameter or the distance between two opposing vertices of a polygon.

After activation of one or more anodes or anode pixels (in the case of an array-type deposition head), deposited features can be deposited on the surface of the seed layer. The deposition is performed on the workpiece by applying a negative (cathode) potential to the seed layer relative to a positive potential applied to the anode of the deposition head or to one or more anode pixels. In general, electrodeposition of metal from metal ions in an electrolyte onto a metallized seed workpiece requires the potential of the workpiece to be below the reduction potential of the metal ions in the solution. For example, in order to plate pure copper on a copper seed layer, the electrolyte should contain copper (and no other metal with a more positive reduction potential), and the potential of the metal film should be more negative than the reduction potential of copper/cathode of. This is achieved by applying a potential difference between the seed layer and the selected anode (and electrolyte). The controller may supply control signals to control the arrangement of the deposition head and the selected anode and/or any number of anode pixels (assuming the deposition head has more than one anode) to activate them.

Still using copper as an example, the rate at which copper is deposited on the seed layer depends on the applied reduction potential and how negative the reduction potential exists at various points across the surface of the seed layer. In other words, a more negative potential generally corresponds to a faster rate of charge transfer or a higher surface reaction rate for the reduction of divalent copper ions to copper ions. The deposition rate also depends on the mass transfer resistance of the copper ions to the surface of the seed layer, where the mass transfer resistance can be reduced using flow strength and solution temperature.

The shape and size of the deposited feature will be determined by the local electrode shape, electrode configuration within the anode, proximity of the electrode to the surface, timing and magnitude of current or voltage supplied to a particular location, various electrolyte-related processing conditions, and other factor. In some examples, the shape of the anode is mapped onto the seed layer in the form of metal interconnects.

For example, factors that affect the scale and pattern of electric field lines can affect the size and shape of deposited features, where factors can include the shape of electrodes. The proximity of the electrodes to the workpiece can affect the resolution of deposited features. For example, the anode and the seed layer of the workpiece can be placed so close together that the electric field generated by the anode has no room to spread out or diffuse, and is thus focused (proximity focused) and highly selectively revealed In the immediate vicinity of the activated anode.

Electrolyte-related factors may include, for example, temperature, electrolyte flow rate, electrolyte composition, pH, and the like. In one example, the degree of convection of the electrolyte can affect the degree to which certain metals are incorporated into the electrodeposited material. For example, certain metals may bond more readily to electrodeposited materials (eg, copper-silver alloys or tin-silver alloys) with relatively high convection. In other cases, different flow patterns may be used to provide hydrodynamic conditions formulated based on the shape of the feature at any given point in time during plating. For example, one flow pattern or set of flow patterns can be used when the feature has a high aspect ratio, and another flow pattern or set of flow patterns can be used when the feature is refilled and thus has a lower aspect ratio. Another set of flowing patterns. In some embodiments, the flow pattern can be selected to achieve a relatively uniform composition (e.g., the extent of silver (or other metal)) in the deposited material during deposition (e.g., the composition of the material deposited deep into the feature is consistent with Subsequent deposited material shallower in this feature is uniform).

The deposited features may include one or more conductive materials. Non-limiting materials for deposited features may include copper (Cu), nickel (Ni), cobalt (Co), iron (Fe), tin (Sn), silver (Ag), gold (Au), zinc (Zn) , Cadmium (Cd), Chromium (Cr), Vanadium (V), Palladium (Pd), Platinum (Pt), Rhodium (Rh), Ruthenium (Ru), Iridium (Ir), Indium (In), Thallium (Tl) , bismuth, antimony (Sb), lead (Pb), and combinations or alloys thereof, such as copper/cobalt, copper/nickel, copper/iron/nickel, copper/tin/silver, nickel/gold, nickel/cobalt/iron , tin/lead, tin/indium, tin/silver or tin/bismuth. The deposited features may include any practical metallization features such as interconnect bumps, interconnects, conductive lines, wires, redistribution lines (RDLs), filling of through-silicon vias (TSVs), 2-in-1 vias, etc. Via, barrier metal, capping film, under bump metallization (UBM), pillar (e.g., with or without capping layer), macropillar, micropillar, cap, leaded or lead-free controlled collapse Die attach (C4) bumps, micro bumps, solder bumps or solder balls. In some embodiments, deposited features can be characterized by aspect ratios typically below about 1:1 (height to width), but can range up to around 2:1, while TSV structures can have very high aspect ratios. ratio (for example, around 20:1). In other embodiments, the deposited features may have dimensions greater than about 2 μm, and are typically about 5-200 μm in a major dimension. In yet other embodiments, the deposited features may have a cross-sectional dimension of from about 0.5 to 100 μm.

The deposited features can be any practical wafer level packaging (WLP) and through silicon via (TSV) electrical connection technology. For example, deposited features can include various package interconnects, along with features of various sizes, including copper wires, RDLs, and pillars of different sizes, including micropillars, standard pillars, and integrated high Density Fan-Out (HDFO) and large cylinders. The range of feature widths can be wide, with the method being particularly useful for larger features, for example, for features from about 1-300 µm in width, e.g., from 5 µm (RDL) to about 200 µm (Large column). For example, the method can be used during the manufacture of workpieces with a plurality of micropillars with a width of about 20 µm, or with a plurality of large pillars with a width of about 200 µm. The aspect ratio of the features can vary, and in some embodiments the aspect ratio of the features ranges from about 1:2 (height to width) to more than 2:1.

In this application, the terms "semiconductor wafer", "wafer", "substrate", "wafer substrate" and "partially fabricated integrated circuits" are used interchangeably. Those of ordinary skill in the art to which the present invention pertains will understand that the term "partially fabricated integrated circuit" may refer to a silicon wafer upon which any of the many stages of integrated circuit fabrication are performed. Wafers or substrates used in the semiconductor device industry typically have a diameter of 200 mm, 300 mm or 450 mm.

In addition, the terms "electrolyte", "plating bath", "bath" and "plating bath" are used interchangeably. Electrolytes include ionically conductive liquids, such as aqueous phase liquids. The electrolyte includes at least one metal ion from which the metal ion is electroplated onto the workpiece to form deposited features. The electrolyte may include other components such as pH buffers, conductivity enhancing components such as acids, metal ion complexing agents, one or more organic plating additives (e.g., accelerators, suppressors, and/or levelers), and any combination thereof. In particular embodiments, the electrolyte includes any metal herein. In some embodiments, the metal includes metals that are readily amenable to electrochemical decomposition, such as Cu, Ni, Co, Sn, and alloys including these metals. The electrolyte may include a metal salt, for example it may include an aqueous solution of copper sulphate. The electrolyte may further include an acid (e.g., sulfuric acid) to enhance solution conductivity and improve solution throwing power, and one or more electroplating additives of different additive classes (e.g., plating accelerators, suppressors, levelers, grain refining agent, etc.). Other electrolytes known in the art to which the present invention pertains can also be used.

The description herein assumes that the embodiments are implemented on any practical artifact. Workpieces can be of various shapes, sizes and materials. In addition to semiconductor wafers, other workpieces that may utilize disclosed embodiments include various articles such as printed circuit boards, magnetic recording media, magnetic recording sensors, mirrors, optical components, micromechanical devices, and the like.

In some embodiments, the workpiece includes one or more underlying layers, a barrier/adhesion layer disposed on the one or more underlying layers, and a metal seed layer disposed on the barrier/adhesion layer. In some examples, the metal seed layer includes 1000Å copper (Cu) deposited on both the barrier/attachment layer, where both the barrier/attachment layer and the copper are deposited using a PVD deposition tool. In some examples, the barrier/adhesion layer includes 100Å tantalum (Ta) deposited using PVD. One or more layers may include silicon wafers, glass substrates, organic substrates, and the like. Components and their components

In some embodiments, an economically practical 3DEP process requires simultaneous plating of multiple individual features (eg, tens of thousands of individual features) over large areas. For each of these features to be used to produce the desired structure (eg, for the same structure for each feature), they must be produced under substantially the same conditions. Variable plating conditions include different gaps and different electrolyte conditions (eg, metal ion concentration). For example, to deposit a surface with features of 50 µm width at 100 µm pitch over a 5x5 cm area (approximately 1/30 of the area of a 300 mm wafer), each of the 250,000 features could have a width of at most approximately 50 µm uniform gap, and its electrolyte concentration is high enough to support high deposition rates. Assuming a gap tolerance of 10% or less, coplanarity runout must be less than +/- 5 µm/5 cm, or less than +/-0.01%. Also, assuming a high metal content electrolyte (eg, 80g/L Cu2+ copper), calculations show that all the metal in the gap will be consumed to produce pillars/bumps with a height of only about 2.5µm. Accordingly, also described herein are hardware and controllers that flow and replenish electrolyte under the gap to maintain a continuous plating operation without separating the workpiece and anode, which can be slow and inefficient, and Need to come back to exactly the same gap and lateral position over and over again. The present disclosure describes the ability to perform high-speed, co-planar gap finding/formation to initiate growth or to continue growing features such that the workpiece-to-anode gap is controlled throughout processing and the electrolyte in the gap is efficiently replenished hardware and processing.

One of the treatments that can be used for deposition from a microanode or anode array is to first bring the deposition head into direct contact with the workpiece. The contact can be detected by simply observing the gap with a microscope, by monitoring the motor power or torque of the z-motion control device, or by having a load cell (eg, a force transducer) as part of the device. A potential difficulty with this method is damage to the workpiece where collisions between two surfaces occur on the surface of the workpiece to be plated. Scratches and missing metal can cause defective plating and yield loss. The process then continues by retracting the positioning mechanism a target amount to move the surface away, thereby creating a gap. The problem with this approach is that this first step typically imposes an unknown amount of compression on the assembly, which results in an unknown and variable amount of back movement required. Furthermore, if the two surfaces are not perfectly coplanar before being brought into contact, different parts of the surfaces will be compressed more than elsewhere, and will retain the original non-coplanarity after receding either because of the The variable compressive stress introduced in the gap zeroing step is changed. Finally, the process continues after stepping back to a specific target gap and plating begins. To replenish metal ions, this gap is periodically made very large (eg, several millimeters) to draw new fluid from around the anode array. This intermittent plating/gap widening process is repeated tens or hundreds of times to produce the desired plating height.

Described herein is an assembly including a deposition head and a flow distribution head (FDH). The FDH may include hardware configurations to generate electrolyte flow towards the gap between the deposition head and the workpiece and displace fluid flow and convection within the gap. In various embodiments, the FDH is optional or not used.

In particular, the deposition head includes one or more microanodes, which may be dimensionally stable anodes and/or dummy anodes. In some cases, the deposition head includes an array of anode pixels. In either case, one or more anodes may be disposed on a proximal surface of the deposition head, where the proximal surface faces the workpiece. The deposition head may also include various connections to the anode or anode pixel or inner anode through wiring and control electronics such as transistors/switches with terminal connections for control through an external power supply and controller. For example, a deposition head may include a substrate having an interconnect layer, an array of control devices, and an array of anode pixels. In some examples, the control device includes a switch, such as one or more transistors, a fuse, and/or other control device. In other examples, the deposition head substrate is configured once and then reused. In yet other examples, the control means includes a switch/transistor system that is configured and reconfigured depending on the desired pattern to be produced by the anode. The interconnect layer may provide routing and wiring connections, including conductors, traces, vias, etc., from the controller, power supply, and/or other devices located externally to the deposition head substrate.

The assembly may include one or more controllers. For example, the controller may include one or more connections via wiring connections to the deposition head, anode pixels, internal anodes, and/or control electronics. The controller can be used to control switching of electronic components, apply current or voltage to the anode pixel or inner anode, and/or adjust current and voltage of one or more anode pixels. In another example, the controller may include one or more connections to the FDH or to a fluid element in fluid communication with the FDH. Such fluidic components may include fluid valves, fluid pumps, flow meters, or other fluid sensors. In yet another example, the controller may include one or more connections to other systems described herein (eg, gap measurement systems or alignment systems).

The assembly may include a gap measurement system. The system may include hardware (eg, one or more sensing elements) capable of measuring the gap distance between the surface of the deposition head and the anode pixel elements relative to the workpiece. Further details of this system are described herein.

The assembly can include an alignment system. The system may include hardware (eg, one or more actuators) capable of moving and positioning the component into alignment with the workpiece surface. This alignment may include not only x-, y-, and/or z-positioning of the deposition head to the workpiece, but may also include making the surface or array of deposition heads coplanar with the surface of the workpiece. Further details of this system are described herein.

In some embodiments, the gap measurement system and the alignment system use sensing elements, actuators (e.g., mechanical actuators and/or piezoelectric actuators), and the sensing elements are associated with the actuators. feedback between the controllers of the actuators to achieve alignment and/or coplanarity.

In certain embodiments, the use of a deposition head with FDH, gap measurement system, and alignment system may allow high-speed plating of semiconductor-scale interconnects over large area devices, including packaged copper pillars (with or without capping layer ), redistribution wiring, high-density fan-out (HDFO) "around the die" high-aspect-ratio interconnects (sometimes called large pillars (typically 200 µm in height)), C4 solder bumps, etc.

Optionally FDH can be used to supplement the fluid flow of the electrolyte to avoid depletion of metal ions, and to remove anode reaction products (including oxygen) as needed to avoid bubble formation or other deleterious effects. In particular, the FDH allows fluid to be introduced into and removed from the area surrounding the deposition head. As shown in FIG. 5A , in some embodiments, the FDH 502 is attached to the deposition head 501 itself, either a) permanently, or b) in a manner that allows the FDH to be removed and reattached ( Attachment such as using screws or other fixed hardware), or c) allows the FDH to be moved towards or away from the deposition head in some way and using its own individual positioning control hardware. This combination may be referred to as deposition head assembly (DHA) 500 .

The FDH can have a plurality of ports, which can be used as input ports or output ports in use. In FIGS. 5A-5B , the FDH includes one or more input port ( 503 ) and output port ( 504 ) located in the outer region of the deposition head 501 . This port is used to introduce the electrolyte into the first gap 506 (between the workpiece surface 509 and the FDH 502) and into the second gap 507 (between the workpiece surface 509 and the deposition head 501), and to generate the The reaction products remove and supplement the flow of reactants in the deposition head gap.

Generally speaking, the FDH gap 506 will be equal to or larger than the deposition head gap 507, at least in part because the FDH gap 506 can be higher than the deposited workpiece area, and the deposited features remaining there can be larger than that of the subsequent electroplating operation. Desired starting gap. As previously mentioned, it may often be desirable to start processing at a gap size equal to or smaller than the smallest planar size of the plated or deposited feature. For example, this may be the width of the target post feature, which may be less than 25 µm in one example for a 25 µm wide feature. For features having more than one critical dimension or long-line variation dimension, the gap may be less than the minimum lateral length. For example, a feature that is 200 µm long and 10 µm wide may have a gap that is less than or equal to 10 µm.

In yet another example, if the plated structure on the workpiece surface is 100 µm high and 25 µm wide, the initial gap of the deposition head gap 507 should be below 25 µm. However, if the area that would fall under the FDH gap 506 has been plated with a 100 µm feature by this or another deposition assembly, the FDH gap 506 should be larger than the 100 µm feature size to avoid damaging the deposited The characteristic department. In embodiments where the two gap settings can be set independently via independent automated actuation, different FDH gaps can be used for previously processed and initial (undeposited) regions of the same substrate. The fluid system is introduced into the gap through the input port 503 and impacts the underlying substrate. The fluid may then follow one of three paths: 1) move to and enter the deposition head gap 507 located below the deposition head 501, and enter the FDH gap near the output port 504 at the opposite side of the FDH, 2) ) substantially around the deposition head in the FDH gap region, and 3) through the FDH gap 506 into the open space 508 surrounding the FDH and back into the FDH gap at the opposite side of the deposition head and flow distribution head. One or more inlets and outlets can be used simultaneously in any combination and relative position, useful for creating a more uniform flow under the deposition head gap, and changing the amount, location and direction of flow between the various inlets and outlets over time ( Each input port can be used as an output port by changing a valve (not shown) external to the DHA). One such use is provided in Figure 8, which is described below.

Figures 7A-7D show hardware and process variations for producing deposited structures on a workpiece. The workpiece can be of any practical material and/or geometry. Non-limiting workpieces may include silicon semiconductor wafers or panels. The workpiece may include a silicon oxide layer and/or a conductive seed layer thereon. The conductive seed layer is typically metallic and often includes copper, tantalum, nickel or mixtures thereof. Other metals may also be used in some cases. The seed layer may have a thickness between about 50-2000 Å. After deposition and before etching, the preferentially plated feature may have a thickness between about 0.25-250 μm. The undesired seed layer between deposited features may be etched away using chemical etching after deposition. After etching, the deposited features are spatially isolated from each other. The isolated features may have a height between about 0.20-200 μm.

Referring to FIG. 7A , a workpiece 701 (eg, a circular wafer) can be electroplated using one or more deposition head assemblies, wherein each DHA is independently movable in three dimensions. These include movement in a plane parallel to the workpiece plane (x- and y-directions) to position the region under the deposition head to perform deposition operations, and in and out of the workpiece plane (z-direction) to control the various anode pixels and The gap between the workpieces. A deposition head assembly (DHA) 703 can move over the workpiece and treat regions of the surface, while different DHAs treat different regions simultaneously, thereby reducing the time to complete deposition on the entire workpiece. Each of the DHA 703 or the deposition head 705 can move independently in three dimensions.

In other embodiments, the DHA is a deposition bar (eg, a print bar) with a single FDH surrounding a plurality of deposition heads. The single FDH may be a single macroframe having a plurality of local flow distribution regions and associated plurality of deposition heads, microanodes or anode arrays, each surrounded by the input and output of its associated local flow distribution ports. In some embodiments, a deposition head may include a single electrode or an array of electrodes. In certain embodiments, deposition rods may be used to deposit on circular wafer or panel workpieces.

7B-7C show workpieces of a wafer 701 or a panel substrate 702 electroplated using a plurality of deposition head bars 704, which are examples of deposition head assemblies. The deposition head assembly 704 may comprise a single macrostructure having a plurality of local flow distribution regions 706 and an associated plurality of microanodes or anode arrays 705, each surrounded by the input and output of its associated local flow distribution port.

In the depicted embodiment, the deposition head assembly 704 (deposition rod) includes a plurality of deposition heads 705, and a single rod that provides the function of a single large FDH. Each deposition head 705 can be a dimensionally stable anode, a dummy anode, or an array of anode pixels. In one embodiment, the relative positions of the plurality of deposition heads 705 constituting the rod 704 are arranged in the plane of the frame and are fixed with respect to the rod and each other. However, each deposition head may include independent mechanisms for positioning in and out of the plane of the workpiece surface and relative to the frame. The use of a plurality of smaller deposition heads (which are co-movable in a plane, but whose deposition head gaps are independently controllable, and often operate in parallel in the workpiece) allows for more local and precise control over large distances between the anode array elements and the workpiece surface , while operating in a linear processing (bottom-to-top) approach with a relatively simple organization. Forming and maintaining non-planar runouts of less than a few microns on the substrate or deposition head alone is difficult, and achieving a long range of fixed gap sizes and coplanarity across 300 mm wafers or larger slabs can be extremely difficult. Therefore, it may be practical to break down the processing bay into smaller groups of processing areas, each with its own mechanical control to achieve fine resolution coplanarity over a single deposition head. Depending on the desired mode of operation of the film construction, the rod can be scanned from the bottom to the top of the substrate in a continuous or stepwise fashion.

In the rod embodiment of FIGS. 7B-7C and around each deposition head 705 of the rod, the DHA 704 may be surrounded by a set of fluid ports (input and output) to separate the workpiece from the DHA 704. A flow is created below the gap between the deposition heads 705 . Please refer to Figure 7D for details. The rod DHA includes a repeating fluid flow structure 706 with input and output ports for and around each deposition head 705 . In one embodiment, the process of changing the input and output flow channels (to change the direction of flow across the gap) is repeated for all active deposition heads simultaneously. For example, all inlet channels 706 at the 12 o'clock position (relative to deposition head 705) in Figure 7D may be configured and operated to have flow at the same time. The inlet channels 706 can further be configured to have the same inlet flow rate. One or more inlet channels may operate simultaneously around various rod arrays. Similarly, one or more outlet channels located in the same location can operate at the same time and flow rate. In the case of configurational symmetry (in Figure 7D, the input port/output port has a double symmetry of 90 degree separation), elements with the same symmetrical position can operate simultaneously.

Please refer to FIG. 8 , the input ports/output ports can be organized into three sets of equal and symmetrical array input port/output port structures 801-804. Each deposition head within the FDH may have a first array of ports 801 operating as an input port for a period of "A" seconds, with fluid flowing from a second array of ports 802 . Then, in another time period A, the input port and the output port can be switched to the third port array 803 and the second port array 802 respectively; then the input port and the output port can be respectively switched to the fourth port array 804 and The first array 801; finally, the input port and the output port are switched to the second array 802 and the third array 803 respectively. In this way, systematic fluid flow can be achieved for the entire array of deposition heads within a single frame of the FDH. In this case, the length of segment A should be short enough that at the end of the cycle after all the inlet/outlet flow configurations used (e.g., four times A seconds), the length of the feature during this segment The growth may be less than about 10%, 5%, 3%, 1% or less of the desired total feature size, dimension or height.

As a final note, each of the flow inlets and outlets need not operate in the same orientation at all times, but must be between the deposition head and the workpiece during the entire plating process (e.g., four times the time period A) experience substantially the same time-variable flow direction profile in the gap. Thus, in some embodiments, the cycle period used for the flow configuration associated with each deposition head should be the same, which may be out of phase between the flow distribution heads (or flow distribution regions in the rod embodiment) . In the example of FIG. 8, each of several deposition heads may flow from 801-804 at any one time, but have the same duration in flow direction and cycle through all combined groups with the same cycle. To emphasize, ideally the flow under the gap and deposition head will experience uniform flow from all directions and the same intensity during the time period in which the crystal plating features do not substantially change height, for example during which the features change their The height is less than about 10%, 5%, 3%, 1% or less. The sources of inlets and outlets for the various flow channels in the array of deposition heads, which are used to control flow rates and create variable flow directions in time (using a set of plural independently moving heads or moving heads fixed to a single rod), can come from relatively small A set of time-varying flow sources and feeds a large number of inlets and outlets.

The DHA may include a gap measurement system 900 that includes a sensing element (eg, a sensing electrode or a microswitch). An example is shown in FIGS. 9A-9C in which one or more microelectrode sensing elements are used to generate one or more signals useful for determining the local distance between the deposition head and the workpiece (gap 902a/ 902b). Deposition head 901 may include sensing element 903a, and current carrying leads 906a that operate in conjunction with metallized workpiece 904 and surface 904a of the workpiece. The deposition head 901 may also include power and sensing circuitry. Electrolyte fills the gap between sensing element 903a and surface 904a. In this embodiment, the impedance of the area (gap) between the sensing element 903a and the lower portion of the workpiece 904 is measured; this impedance allows the gap distance 902a to be determined based on the resistance of the electrolyte. In some embodiments, there is a current carrying lead 906a to the surface of the sensing element 903a, and a second parallel non-current carrying lead 906b to sense the voltage near the sensing element 903a. Sensing the voltage response with the non-current carrying lead 906b eliminates the voltage drop in the current lead (which can be significant and equal to or greater than the resistance across gap 902a), making it more difficult to measure the gap. For example, it avoids having to include the contribution of the ohmic voltage drop across any switching transistor (if present, for example, if this element is also used in plated features), as well as any in-manufacture line resistance variation of the power lead 906b resistance characteristics, making the judgment of the gap signal more complicated or even impossible to simplify. Alternatively, the monitoring circuit uses a single lead 906a to carry the current, but the sense lead connected to the current carrying line follows the switching transistor.

Input signal waves to one or more sensing elements can be used to determine local gaps. The input can be a voltage control or a current control input, wherein the corresponding circuit is monitored and analyzed in response to an electrical signal (voltage - current used by the input, or vice versa). In some embodiments, a staggered or pulsed electrical input wave or train is used and the response is analyzed. In another embodiment, white noise is the input, and the input signal and the Follier transform of the response are analyzed.

In some embodiments, the sense current flows from the one or more sense elements 903a across the gap 902a or 902b, and across the workpiece surface 904a. In other embodiments (as in FIG. 9B ), the sense current flows through the sense element 903a, and a bump or protrusion 904b on the surface (optionally created by electrodes previously operated in feature growth mode). /growth) and the underlying monolithic workpiece 904. In other embodiments (as in FIG. 9C ), the sense current flows through the electrolyte between two or more sense elements 903a/b, and to a lesser extent in a general direction parallel to the deposition head and the workpiece. In, across and out of the surface 904a of the metallized workpiece 904 to provide a gap 902a/c between the sensing elements 903a/c and the surface 904a of the workpiece 904. In the first case (a single electrode with a signal through the substrate), the main resistance to current flow in the gap in the electrolyte is related to the specific resistance of the electrolyte, the cross-sectional area of the sensing element, and the sensing element's response to the surface gap 902a (FIG. 9A). The capacitance of this configuration is related to the dielectric constant of the electrolyte, and the size of the electrodes, and the gap between the electrode and the workpiece and/or the gap between the electrode sensing pairs. These methods may be sensitive to the presence of features 904b and gaps 902b and, to a lesser extent, gaps 902a of workpiece 904 if the electrodes are also used in individual operations of growing features. In general, the resistance of the electrolyte in the gap is approximately proportional to the concentration of dissolved ionic species (ionic strength) of the electrolyte, but the capacitance of the system gap and feature configuration is related to the fundamental dielectric constant of the solvent (eg, water). By analyzing the in-phase (resistive or real part of the resistance) and out-of-phase (capacitive/imaginary part of the resistance) components of the response to the input electrical disturbance wave, enough information can usually be obtained to determine the difference between the protruding feature 904b and the sensing element 903a. The gap 902b to reach the workpiece 904, and the gap 902a to reach the workpiece 904.

The magnitude (amplitude) of the voltage or current perturbation of the sensing wave may be small, such as an input voltage wave of several millivolts to tens of millivolts, such as about 10 mV or less, or one that results in a response of tens of millivolts A current wave of appropriate size. For example, relatively small current perturbations drive small voltage differences between the inert anode surface and the substrate or features on the substrate. By keeping the voltage small relative to the potential required to drive the plating on the anode array electrode or substrate, only polarized charge will accumulate on each surface in the form of an electrical double layer. This avoids unwanted charge transfer reactions (eg, metal plating or corrosion), and modification of the substrate or sensing electrodes with plated metal or metal corrosion. Since the gap between the electrode pixel and the surface and the electrolyte resistance are small relative to the interfacial charge transfer resistance, the fundamental time constant of the equivalent circuit is very small/short and very high frequencies are required to exceed this time constant and Measure gap resistance. Therefore, it is common to use high frequency input waves, such as waves in the mid to high radio frequency range. For example, frequencies of about 100 kHz to 10 MHz, or about 1 Mhz to 5 MHz, or about 2 MHz to 5 MHz are preferred.

In order to be able to automatically set up and control the gap between the workpiece and the deposition head to be small (eg, less than about 100 or 50 µm) dimensions are the same, requiring precise positioning hardware and processing to work with the gap sensing devices described above. For DHAs containing one or more small anodes or arrays of inert anodes (as deposition heads), coarse positioning actuators (e.g., linear screw-based actuators or stepper drives) can be used to move the DHA away from the surface Sufficient distance to allow insertion and removal of workpieces such as wafers or panels. Such a DHA may also include one or more fine positioning actuators, such as piezoelectric actuators or high precision linear screw based actuators. Thus, DHA can be used in conjunction with alignment systems comprising coarse and fine actuator elements. In some embodiments, the one or more fine positioning actuators have an accuracy of at least about 5 µm or at least about 1 µm.

Please refer to FIGS. 10A-10B and 11A-11B , which show components of the DHA 1000 with vertical positioning and coplanar control capabilities, while certain internal component details are not shown for simplicity and clarity. The DHA 1000 includes an array 1001a of anode pixels (e.g., an array of inert anodes) disposed on the proximal surface of the deposition head 1001 facing the workpiece 1007; either on the proximal surface of the deposition head 1001 or as part of the deposition head 1001 One or more gap sensing elements (not specifically shown) (not specifically shown) having an array of inert anodes 1001a on their surface; peripheral FDH 1002 (not shown for fluid control systems) connector details); a mounting assembly 1005 with a longer distance vertical position actuator 1003 comprising a set screw 1004 with a motor and a gear 1006; wherein the mounting assembly 1005 is further attached to a lift base plate 1009, The lift base plate 1009 can be moved up and down. The lift base plate 1009 can thus be attached to the FDH 1002 and three or more fine (eg, less than about 1 μm) resolution actuator elements 1010a/b/c. The actuator element is thus attached to the deposition head 1001, allowing the deposition head 1001 to move up and down, and also capable of changing the spatial plane of the front surface of the anode array 1001a with respect to the workpiece and the remaining DHA by changing each of 1010a/b/c independently . The vertical position actuator 1003 is used to move the entire DHA (deposition head 1001, FDH 1002 and others) towards or away from the workpiece 1007, allowing relatively coarse adjustments in the size of the gap 1008a between the deposition head 1001 and the workpiece 1007 . Likewise, the deposition head 1001 is attached to the lift base plate 1009 via fine actuators 1010a/b/c only, allowing the movement of the deposition head 1001 to be independent of the rest of the DHA and perpendicular to its mean plane. In a preferred embodiment, the fine positioning actuator may be a piezoelectric actuator or a series combination of plural actuators (to extend the range of motion of the device). In certain embodiments, the use of coarse and fine adjustments can provide a desired FDH gap 1008b (between the proximal surface of the FDH 1002 and the surface of the workpiece 1007) and/or a desired deposition head gap 1108a (between the deposition head 1001 between the proximal surface of and the surface of the workpiece 1007). In certain embodiments, the FDH gap is larger than the deposition head gap.

In a typical operation (eg, as in FIGS. 10A-10B ), after a workpiece is placed beneath the DHA, the DHA is moved near the surface and the gap between the workpiece 1007 and the DHA 1000 is reduced using the long distance vertical positioning actuator 1003. Gap sizes as small as 200 to 2000 µm. If electrolyte was not on the surface to fill the gap prior to this step, the gap between the workpiece and the anode array is now flooded by flowing fluid and delivering the fluid from the FDH to the gap. Using sensing elements, including those previously described and with reference to FIGS. 9A-9C , can be used to determine the gap size. In one embodiment, at least three sensors (each adjacent to the piezoelectric actuator 1010a/b/c in FIGS. 11A-11B at different points on the deposition head or within the anode pixel array) Measure the gap while charging to reduce the gap until the target gap size is reached. For example, the movement of the piezoelectric element continues until each sensor gap indicates a target gap 1008 (eg, from 10 to 50 µm or 10 to 25 µm). The actions of each pair of sensors and actuators can be independent, and each pair has a controller with an algorithm for reducing the size and maintaining the gap size at the target size.

For embodiments employing inert or dummy anodes, a deposition head may be configured with an array of anode pixels (as shown in Figures 12A-12B). With this configuration, each anode 1201 can be configured or activated to deposit a single feature 1204 , or configured or activated such that groups of smaller anodes are turned on 1202 or off 1203 together to deposit a single feature 1205 . The previous configuration in Figure 12A allows the use of anodes with relatively large dimensions on the order of the feature size, but deposition heads produced in this way can only be used for a single mold design or a small selection of very similar mold designs because each The location of feature 1204 is determined by the location of the corresponding anode.

By using a deposition head with a greater number of relatively small anode pixels (as shown in FIG. 12B ), features can be deposited by groups of these anodes, so the position of feature 1205 is determined only by the programming of the deposition process. , and region 1206 can be left empty simply by leaving pixels there. The latter approach has several advantages: 1) the flexibility of feature size and location allows a single deposition head design to be used for any mold design, and 2) which anodes are active can be changed during the deposition process to vary the diameter of features, location etc. In particular, feature dimensions may need to be varied in the optimization of the deposition process. As discussed herein, the extent of current distribution between the anode and workpiece can be an important issue, especially at the beginning of the process. Therefore, it may be beneficial to start the deposition process with a smaller active anode area to localize the current flow to a smaller area on the workpiece. Then, after the feature begins to form, more anodes around the initial location can be turned on to widen the feature to the desired size without substantially increasing the deposition in the field around the deposited feature. Similar methods can be used where multiple metals are to be deposited. The second metal may be deposited using a smaller set of anodes than the first metal to facilitate deposition on top of the first metal and minimize deposition on the sides of deposited features.

Referring to Figures 13A-C, in some embodiments, a two-step electroplating process is used to create structures on a substrate. In these cases, the device contains additional auxiliary electrode elements for electroplating metal onto the pixels of the deposited array. During operation, the DHA is in electrolytic connection and communication with the substrate, the auxiliary electrode, or both, but communicates with the auxiliary electrode during DHA electroplating, and communicates with the substrate during electroplating onto the substrate. In certain embodiments, the anode array comprises an auxiliary anode at the periphery of, or in some cases attached to, a portion of the anode array assembly.

An example of this embodiment is depicted in FIG. 13A , where a deposition head 1321 includes an auxiliary electrode 1325 attached. Therefore, the auxiliary electrode 1325 moves together with the deposition head 1321 . In this embodiment, the deposition head 1321 is positioned farther from the substrate 1325 during plating to the inert electrode of the deposition head than during plating from the deposition head to the substrate. Movement between these positions is depicted by the vertical arrows in Figure 13A.

In other embodiments, the deposition head is separate from the second anode. An example of this embodiment is depicted in FIG. 13B , which shows a top view illustrating deposition head 1321 above substrate 1323 . As shown, the auxiliary electrodes 1327 are laterally offset from the substrate 1323 . During the first step, the deposition head 1321 is over the auxiliary electrode 1327 while its pixel is operating as the cathode and the metal being plated onto the inert electrode. In a second step, the deposition head 1321 moves over the substrate 1323 while its pixels operate as anodes and electroplate metal from the inert electrode onto the substrate.

Other configurations are contemplated. For example, the auxiliary electrode may be separated from the deposition head and provided above the deposition head. During operation, the deposition head is movable in the z-direction between a position close to the auxiliary electrode (for plating onto the inert electrode) and a position close to the substrate (for plating from the inert electrode onto the substrate). In other examples, the auxiliary electrode is attached to the deposition head, and the deposition head is moved laterally between positions above the substrate (for plating from the inert electrode onto the substrate) and laterally offset from the substrate (for electroplating onto the inert electrode).

In operation, after the device receives the workpiece with the seed layer, the system can be flooded with electrolyte, and in the area between the substrate, the workpiece, and the auxiliary electrode. The auxiliary electrode can be an inert anode or an active metal electrode consisting of an electroplatable metal in an electrolyte to be electroplated onto the substrate. In addition, an inert electrode (of the anode pixel) is disposed in the cavity or well of the dielectric material that is filled and removed by the plating metal in this process. Please refer to FIG. 13C , where the substrate 1331 made of insulating dielectric material has a plurality of cavities or wells. Each cavity or well has an inert electrode 1333 disposed at one end. Each inertial electrode 1333 is independently electrically addressable through a separate electrical lead 1335.

In a first step, metal is plated onto one or more inert electrodes of the anodic pixel to a target thickness, which is typically equal to or less than the depth of the pixel well. In the embodiment of FIG. 13C , this plated metal is shown by layer 1337 . As shown, the pixel dimensionally stable metal (ie, the inert electrode) can be surrounded by a patterned dielectric material with the metal exposed at its bottom. During this step, the position of the head assembly is set not close to the first target position of the substrate. In certain embodiments, during this step, this distance between the substrate and the DHA may be greater than the smallest in-plane dimension of the DHA and allow current to pass freely and in a substantially uniform manner from the auxiliary electrode between the substrate and the DHA. in the interstitial space. For example, if the DHA has a width of 25 cm and a length of 100 cm, a gap of 25 cm is appropriate. During electroplating into pixels, the separation between the print head and the workpiece can be greater than the maximum distance the current must travel (thus at least the smallest lateral dimension of the print head) without inducing a voltage gradient in the workpiece.

A constant current density across all pixels is used to plate the electrolyte metal from the ionic metal in the electrolyte onto various inert electrodes. This produces a constant amount of metal plating on all inert electrodes. In other cases, the amount of metal plated in this step may be non-uniform across the inert electrodes, eg, to allow correction for process variable pixel-to-pixel current efficiency.

After the pixel wells are filled with metal, the head is moved and positioned to a second target position close to the workpiece. As discussed with reference to FIG. 4, the distance between the head and the plated surface may be smaller than the dimension of the feature being plated. For example, to plate a 50 µm cylinder, the gap in this step can be less than about 50 µm. This distance is initially the distance between the seeded substrate and the DHA, but later in the process (when the structure has grown) it is the distance between the DHA and the top of the deposited structure. The gap need not be the same throughout each cycle of the process, but can be programmed to vary in response to various programmable desired requirements. Next, the inert electrodes are activated by a suitable power source, rendering the substrate anodic, and metal is deposited on the substrate below the surface of each active pixel, which surface may be bounded by the surface of the insulating substrate with holes. If the target thickness of the structure is not reached before the metal plated on the inert electrode is depleted (or otherwise required), the plating step on the substrate is terminated and the head is moved away from the surface and to the first target location, Repeat the process on that location. The process is thereby performed in a cyclic step-by-step fashion until the target feature thickness is reached. system

Also disclosed herein are systems using DHA. Figure 14 provides a system 1400 comprising a deposition head 1401 with an anode pixel array 1401a, an FDH 1402, a sensing element 1403, an actuator element 1404, a mounting assembly 1405 attached to a lifting base plate 1409, a mounting assembly 1405 attached to a deposition head 1401 lifts base plate 1409 , and controller 1410 . Alternatively, sensing element 1403 is replaced by one or more electrodes configured as array 1401a of one or more sensing electrodes. System 1401 may further include an electrolyte source 1424 in fluid communication with FDH 1402 via pump 1422 and valve 1420 . Controller 1410 can be electrically connected to any components of system 1400 (e.g., valve 1420 and/or pump 1422) to provide electrolyte to FDH 1402; The element or anode pixel operates to function as a circuit for the sensing element; the actuator element 1404 to align and position the proximal surface of the deposition head relative to the metallized surface 1407a of the workpiece 1407 (which is grounded); and/or Assembly 1405 is mounted to operate actuators, screws and/or motors to position the DHA.

The system may include hardware (eg, pumps, tubes, filters, etc.) for the controlled delivery of electrolyte from the bulk storage vessel to the FDH. The device may include a plurality of features that support simultaneous and independent fluid access to ports within the FDH. The system may include elements for controlled heat removal or addition, and elements for temperature control of the electrolyte, workpiece, deposition head, or both. The apparatus can be designed such that the area above the deposition head and workpiece is substantially sealed (e.g., forming a chamber) such that the space around the head and/or the atmosphere in the gap between the deposition head and the wafer is at a temperature and/or the presence of gases is controlled. For example, an environmental chamber can be used to remove unwanted gases (eg, oxygen). In these or other examples, one or more gases (eg, reactive gases or inert gases) may be added to the chamber, eg, to react with the workpiece or to create an inert atmosphere (eg, argon). In these or other examples, the apparatus may include hardware for adjusting the atmosphere to contain a controlled amount of evaporated electrolyte and/or to perform deposition under controlled conditions. Other common device features may include fluid condition delivery control devices (e.g., heater/coolers and heat exchangers, level controllers, etc.), and feedback control metering, such as for regulating fluid delivery (e.g., using on-board Optical analysis of liquid films). Multi-channel power and/or power switching devices are also contemplated to enable on-off control of arrays of deposition heads for individual operation within larger deposition heads.

The controller may be used to control the state of control devices or other circuitry associated with the deposition head, valves, pumps, gap sensing elements, or actuators of the alignment system. An alignment system or another positioning system may be used to position the workpiece, deposition head and/or anode pixel array. In some examples, an alignment or positioning system positions the workpiece, deposition head, and/or anode pixel array prior to performing deposition of metal interconnects. An alignment or positioning system then repositions the workpiece, deposition head, and/or anode pixel array before performing metal interconnect deposition on the same workpiece. The process may involve plating, stopping plating, moving, and then plating again. Alternatively, the process may involve simply moving the workpiece continuously at a constant velocity relative to the deposition head, with the anode being energized/turned on or moving at a time-varying velocity. The direction of relative motion can also be changed during the electroplating process. These processing steps may be repeated one or more times on the same workpiece to create the metal interconnect pattern.

In some implementations, the controller is part of a system and the system can be part of the examples described above. The system may include semiconductor processing equipment including one or more processing tools, one or more chambers, one or more processing platforms, and/or specific processing components (wafer susceptors, gas flow systems, etc. ). These systems can be integrated with electronic components to control the operation of semiconductor wafers or substrates before, during and after processing them. The electronic components may be referred to as "controllers," which may control various components or subcomponents of one or more systems. Depending on the treatment requirements and/or system type, the controller can be programmed to control any of the treatments disclosed herein, including delivery of electrolytes, positioning of DHA or components thereof, activation of one or more anodic pixels or groups of anodic pixels, One or more gaps, etched seed/barrier layers, etc. between the DHA and the workpiece are sensed.

Broadly speaking, a controller can be defined as an electronic component having various integrated circuits, logic, memory, and/or software to receive commands, send commands, control operations, enable cleaning operations, enable endpoint measurements, and the like. The integrated circuits may include chips storing program instructions in the form of firmware, digital signal processors (DSPs), chips defined as application specific integrated circuits (ASICs), and/or chips that execute program instructions (e.g., software) One or more microprocessors or microcontrollers. Program instructions may be instructions transmitted to the controller in the form of various individual settings (or program files) defining operating parameters for performing specific steps on or for the semiconductor wafer or for the system. In some embodiments, the operating parameters may be part of a recipe defined by a process engineer to process one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and/or wafers One or more processing steps are performed during the fabrication of a die or another workpiece.

In some implementations, the controller can be part of, or coupled to, a computer that is integrated and coupled to the system, or otherwise networked with the system, or a combination thereof. For example, the controller can reside in the "cloud," or in all or part of the FAB's main computer system, allowing remote access for substrate processing. The computer enables remote access to the system to monitor the current progress of the machining operation, view the history of past machining operations, view trends or performance metrics from multiple machining operations, change the parameters of the current process, set the processing steps after the current process, Or start a new process. In some examples, a remote computer (eg, a server) may provide processing recipes to the system over a network, which may include a local area network or the Internet. The remote computer may include a user interface to enable input or programming of parameters and/or settings which are then transmitted from the remote computer to the system. In some examples, the controller receives instructions in the form of data specifying parameters for various processing steps to be performed during one or more operations. It should be understood that the parameters may be specific to the type of step to be performed, and the type of implement the controller is configured to connect to or control. Thus, as noted above, the controllers may be distributed, for example, by including one or more discrete controllers networked with each other and directed toward a common purpose, such as the steps and controls described herein. ) to operate. An example of a controller distributed for this purpose would be one or more integrated circuits located on the chamber that are located remotely (e.g., at the platform level or as part of a remote computer) and combined to control the chamber One or more integrated circuits for the above processing are connected.

Without limitation, exemplary systems may include a 3DEP chamber with a deposition head assembly, a plasma etch chamber or module, a deposition chamber or module, a spin-rinse chamber or module, a metal plating chamber or module group, cleaning chamber or module, edge etch chamber or module, physical vapor deposition (PVD) chamber or module, chemical vapor deposition (CVD) chamber or module, atomic layer deposition (ALD) Chambers or modules, atomic layer etching (ALE) chambers or modules, ion implantation chambers or modules, orbital chambers or modules, and which may relate to or be used in the processing and/or fabrication of semiconductor wafers any other semiconductor processing system.

As noted above, depending on one or more processing steps to be performed by the tool, the controller may communicate to one or more other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, A tool location and/or a load port adjacent to a tool, a tool throughout the fab, a host computer, another controller, or a tool used in material handling to bring containers of substrates into and out of a semiconductor fabrication facility. method

Also disclosed herein are methods in which any of the described devices, components, or systems may be employed. In some embodiments, referring to FIG. 15 , the method begins by receiving 1501 a workpiece including a seed layer disposed on its surface, wherein the seed layer is electrically conductive; positioning 1502 a deposition head proximate to the surface of the workpiece, wherein The deposition head optionally includes an array of anode pixels; the electrolyte is delivered 1503 to the anode pixels by a fluid distribution head (FDH), wherein the FDH is configured to surround the array; and by supplying current and/or voltage to the array, or at A potential difference is supplied between the workpiece and the array to activate 1504 one or more anode pixels to provide deposited features at a first location.

The method can include determining 1505 whether the first deposited feature meets a target feature size and/or target shape. If the target feature is not met, operations 1502-1505 may be repeated any n times until the desired condition is met. If the target characteristics are met, the deposition head may be repositioned to another location on the workpiece to expand the first deposited feature (e.g., extend a wire connected between the first location to another location), or Yes providing a second deposited feature. For continued deposition, operations 1503-1504 may be performed, and if the target feature is not deposited, operations 1502-1504 may be repeated. After deposition is complete, residual or unwanted seed/barrier layer can be removed by etching, thereby isolating the deposited features.

FIG. 16 illustrates a process 1601 using a two-step plating-deplating process to plate features onto a workpiece. As shown, the process begins at operation 1603, where the electroplating system receives a workpiece having a conductive seed layer formed on at least one surface. As shown, the workpiece may be a semiconductor-containing wafer, or other substrate having one or more electronic devices or partially fabricated electronic devices thereon. After receiving the workpiece, the electroplating system delivers electrolyte between the deposition head (as described herein) and the auxiliary anode. Please refer to operation 1605 . The auxiliary anode may comprise a consumable metal, such as copper, or it may comprise a metal that is remarkably inert to the electrochemical environment encountered in subsequent operation.

If the deposition head is not already close to the auxiliary electrode, it is placed nearby in operation 1607 . In this position, the deposition head can electrochemically interact with the auxiliary electrode, but not electrochemically interact with the workpiece, or it can electrochemically interact with both the auxiliary electrode and the workpiece. The gap measurement system and/or alignment system described herein may be employed to ensure proper movement and positioning of the deposition head relative to the auxiliary electrode. In this position, the deposition head is not close to the workpiece to ensure that no voltage gradient is created across the workpiece during the next operation 1609 .

After the deposition head is positioned in the defined proximity of the auxiliary electrode, the electroplating system electrically activates the auxiliary electrode and/or the inert electrode of the deposition head. See operation 1609. This activation allows the metal to be plated onto the inert electrode of the deposition head. In other words, the inert electrode acts as the cathode of the anode of the auxiliary electrode. As described elsewhere, the deposition head may include grooves or cavities that confine the plated metal to a defined space adjacent to the inert electrode. In some cases, the combination of the inert electrode, adjacent grooves in the dielectric material on the deposition head, and associated electrical leads define an anode pixel of the deposition head.

Next, the system moves the deposition head away from the auxiliary electrode and closer to the workpiece. See operation 1611. Gap measurement systems and/or alignment systems as described herein may be used to ensure proper movement and positioning of the deposition head relative to the workpiece.

In this position, the system can again electroactivate the passive electrode, but this time in such a way that the passive electrode acts as the anode and the workpiece acts as the cathode. See operation 1613. This causes metal previously deposited on the inert electrode (when they are activated near the auxiliary electrode) to plate onto the workpiece.

After some or all of the consumable metal has been plated from the inert electrode onto the workpiece, the electrical activation is stopped. During or after plating onto a substrate, the plating system determines whether plated features (sometimes referred to as printed features) meet target specifications for size and/or shape. See operation 1615. This determination can be made using the gap measurement system or process described herein.

If the judgment indicates that the characteristic part conforms to the specification, the main processing is terminated. If the determination indicates that the feature has not grown to meet specification, then an additional loop is performed. In other words, process control returns to operation 1607, where the deposition head is again positioned near the auxiliary electrode (away from the workpiece). Here, operations 1607-1615 are repeated.

At some point after performing one or more such cycles, the system determines that the plated features on the workpiece meet appropriate size and/or shape specifications. At this point, the process can be terminated. However, in some embodiments, one or more additional operations are performed by the system (or associated downstream systems).

In some embodiments, the deposition head is only large enough (or has only a sufficient number of anodic pixels) to plate a subset of features that must be plated on the workpiece. In such embodiments, the process optionally includes additional operations in which operations 1607-1615 are performed one or more times again, but at different regions of the workpiece to deposit a different subset of features on the workpiece. See operation 1617. Depending on the relative sizes of the workpiece and deposition head, this process can be repeated several times. For example, if a process requires electroplating 400,000 features on a workpiece, and the deposition head contains only 120,000 anodic pixels, the process performed by operations 1607-1615 may be performed four times, each for the difference in the deposition head relative to the workpiece. Location.

In some embodiments, after completion of the previous operations described herein, the system etches some or all of the seed layer on the workpiece outside of the region where the features were deposited. See operation 1619.

In general, the measurement of the gap can be completely separated from the plating process, that is, the surface gap can be measured and the alignment can be achieved without plating, then the head can be moved to the pixel filling step, and then the head can be moved to start on the substrate Target starting gap for plating. Thereafter, another measurement may (or may not) be performed. Whether the process is sufficiently consistent and the positioning hardware is accurate and reproducible is a minimum requirement for the process.

In some embodiments, the system measures the gap based on measurements of the dummy wafer or the first wafer, or if the head is smaller than the wafer, based on measurements across various locations over the dummy wafer/first wafer, making any suitable alignment, store this information. Thereafter, if the reproducibility of the system is very good (eg, it can stay within about 1 um), the overall mechanical position can be determined and reused for subsequent workpieces. Thus, the workpiece used for initial alignment may be a dedicated alignment substrate, or a previously processed production workpiece. in conclusion

The techniques described herein enable the formation of fine line interconnects, pads, and other metal features at very small scales with high accuracy and precision (eg, <0.5 μm). Advantageously, these techniques can be practiced without many of the conventional processes, equipment, and materials used in the conventional process flow described with respect to FIG. 1 . For example, the techniques herein do not require the use of photoresist, lithography tools, photoresist baking equipment, photoresist curing equipment, photomasks, development chemicals and tools, oxygen plasma descum equipment, or photoresist cleaning and stripping equipment. As a result, ownership and handling costs associated with the formation of fine line interconnects, pads, and other metal features are substantially reduced.

While the foregoing embodiments have been described in some detail for purposes of clarity of understanding, it will be apparent that certain changes and modifications may be made within the purview of the appended claims. It should be noted that there are many alternative ways of implementing the processes, systems and apparatus of the presented embodiments. Accordingly, the presented embodiments are to be regarded as illustrative rather than restrictive, and the embodiments are not limited to the details given herein.

101~108: Operation 201~203: Operation 301: Workpiece 302A: inner chamber 302B: inner anode 303: mask 304: hole 305: hole opening 305a: Radius 305b: diameter 305c: Gap distance 305d: center to center distance 307: Gap 311: Workpiece 317: Gap 318: Substrate 319: Inert anode 319a: width 319b: Length 319c: Gap distance 319d: center to center distance 500: Deposition Head Assembly (DHA) 501: deposition head 502:FDH 503: input port port port 504: output port port 506: First gap 507:Second gap 508: opening interval 509: workpiece surface 601: Substrate 602: Pad 603: dielectric 604: Seed layer 605: RDL 701: Workpiece 702: panel substrate 703: Deposition Head Assembly (DHA) 704: deposition head rod 705: deposition head 706:Local flow distribution area 801: The first port array 802: Second port array 803: The third port array 804: The fourth port array 900: Gap measurement system 901: deposition head 902a, 902b: clearance 903a, 903b, 903c: sensing elements 904: Workpiece 904a: surface 904b: protrusion 906a: Current carrying leads 906b: Second parallel non-current carrying lead 1000:DHA 1001: deposition head 1001a: Array of Anode Pixels 1002:FDH 1003: Vertical position actuator 1004: set screw 1005: Install components 1006: gear 1007: Workpiece 1008: target clearance 1008a/b: Clearance 1009: lift base plate 1010a/b/c: Actuator element 1108a: deposition head clearance 1201: anode 1202: open 1203: off 1204,1205: Characteristic part 1206: area 1321: deposition head 1323: Substrate 1325: auxiliary electrode 1327: Auxiliary electrode 1331: Substrate 1333: Inert electrode 1335: Electric lead wire 1337: layer 1400: system 1401: deposition head 1401a: Anode Pixel Array 1402:FDH 1403: sensing element 1404: Actuator element 1405: Install components 1407: Artifact 1407a: metallized surface 1409: lifting base plate 1410: controller 1420: valve 1422: pump 1424: Electrolyte source 1501-1507: Operation 1601: processing 1603-1619: Operation

FIG. 1 is a flowchart describing a method of forming metal features using photoresist-based techniques.

Figure 2 is a method of forming deposited features according to embodiments herein.

Figures 3A to 3D show non-limiting devices with multiple anodes. Provided is a device having (A, C) dummy electrodes and (B, D) inert electrodes.

Figure 4 shows simulation results for non-limiting 1x1 deposited features fabricated with various microelectrode-to-workpiece gaps (from 0.75 µm to 3.5 µm).

5A-5B show non-limiting schematic diagrams of an assembly having a deposition head 501 and a flow distribution head (FDH) 502 . Provided are (A) a cross-sectional view showing flow creation and concentric flow restriction between deposition head 501 and workpiece 509; and (B) a top view showing deposition head 501, FDH configured to surround the deposition head 502, and the port 503 set in the FDH.

Figure 6 shows a non-limiting structure with a redistribution layer (RDL, 1505), where the RDL can be a deposited feature according to embodiments herein.

7A-7D show a non-limiting example of an assembly using a plurality of deposition heads. Presented are (A) a deposition operation using a plurality of independently positioned deposition heads; (B) a deposition operation on wafer 701 using a plurality of deposition heads, with a single FDH surrounding each deposition head; Deposition operation on the face plate 702 of the head; and (D) a close-up view of the deposition head 705 and the FDH 705 with the port 706.

Figure 8 shows a non-limiting example of a FDH with a configuration of fluid ports.

9A to 9C show non-limiting examples of sensing elements for different current flow schemes. Provided are (A) a sensing operation for judging the gap distance 902a by sensing the current flow between the sensing element 903a and the conductive layer 904; (B) sensing operation between the sensing element 903a and the conductive layer Another sensing operation to determine gap distance 902b by current flow between protrusions or other features provided on 904; The current flows to determine yet another sensing operation of the gap distance 902b.

10A-10B illustrate a non-limiting embodiment of an assembly having components of an alignment system. Provided are alignment operations for (A) bringing the assembly to a first location on the workpiece 1007; and (B) using the mounting assembly 1005 to position the assembly vertically.

11A-11B show non-limiting examples of components of an alignment system with further components. Provided is (A) an alignment operation for aligning the deposition head within the gap distance 1008 to the surface of the workpiece 1007, and/or for aligning the plane of the proximal surface of the deposition head parallel to the plane of the workpiece 1007. the plane of the surface; and (B) a top view of the deposition head 1001 with a plurality of fine actuator elements 1010a/b/c.

12A-12B show non-limiting embodiments of deposition heads with (A) single anode and (B) multiple anode pixels. Provided are (A) an anode 1201 configured to provide a single deposited feature 1204 and (B) a plurality of anode pixels configured as an active cluster 1202 of anodic pixels to provide a single deposited feature 1205 .

13A-13B show embodiments in which a deposition head interacts with an auxiliary electrode to plate metal onto the deposition head, and a deposition head interacts with a workpiece to plate metal from the deposition head onto features of the workpiece.

Figure 13C shows an example of an anodic pixel with an inert electrode and metal associated with electroplating onto a feature of a workpiece.

FIG. 14 shows a non-limiting embodiment of a system 1400 comprising an assembly having a deposition head 1401 , an FDH 1402 , a mounting assembly 1405 and a controller 1410 .

15 is a flowchart describing a method of forming deposited features according to embodiments herein.

Figure 16 is a flowchart describing a method of forming deposited features according to a two-step embodiment herein.

201~203: Operation

Claims (29)

A component comprising: a deposition head comprising an array of anode pixels disposed on a proximal surface of the deposition head, wherein the array of anode pixels comprises a plurality of inert electrodes and a plurality of control means configured to supply current to the plurality of inert electrodes one or more of the selected ones; a gap measurement system comprising one or more sensing elements, wherein the gap measurement system is configured to measure impedance of a region between at least one sensing element of the one or more sensing elements and a lower portion of the workpiece, thereby measuring the distance between the proximal surface of the deposition head and the surface of the workpiece; and a controller connected to the deposition head and configured to drive the supply of current and/or voltage to the array, or to supply a potential difference between the workpiece and the array, thereby forming defined electric field. If the component of claim 1 further includes an alignment system, the alignment system includes: a plurality of fine actuator elements attached to the deposition head, wherein the fine actuator elements are configured to position the proximal surface of the deposition head within a first gap distance to the surface of the workpiece, and /or having the proximal surface of the deposition head lie on a plane parallel to the surface of the workpiece. The assembly of claim 2, wherein the alignment system is configured to control motion along five axes, including three mutually perpendicular linear axes, and two rotational axes, wherein the two rotational axes are oriented such that the The planarity of the deposition head can be adjusted relative to the workpiece. The assembly of claim 3, wherein the alignment system is configured to pass through a set of three fine actuator elements arranged in a triangle, or two fine actuator elements and a third fixed point arranged in a triangle, and Movement along the two axes of rotation is controlled. The assembly of any one of claims 1 to 4, wherein at least one of the one or more sensing elements is disposed on the proximal surface of the deposition head and is electrically connected to a circuit to determine the sensing The distance between the component and the surface of the workpiece. The assembly according to any one of claims 1 to 4, wherein at least one of the one or more sensing elements is electrically coupled to the power supply circuit and the sensing circuit. The assembly of claim 6, wherein the at least one sensing element includes one of the plurality of inert electrodes. The assembly of any one of claims 1 to 4, wherein the controller is configured to supply the current and/or the voltage, or supply the potential difference, in a manner that provides a deposited feature, and wherein the deposited feature is Deposition can be through a single anode pixel or through a plurality of anode pixels. The component of claim 8, wherein the controller is configured to drive: The current, the voltage or the potential difference is supplied to a group of connected anode pixels to define the shape or size of the deposited feature. The component according to any one of claims 1 to 4, further comprising a power supply circuit electrically coupled to the plurality of inert electrodes, wherein the power supply circuit is configured to apply a first potential and/or current to make the inert electrodes face each other The workpiece acts as an anode, and applying a second potential and/or current causes the inert electrodes to act as cathodes relative to the auxiliary electrode. The assembly of claim 10, wherein the auxiliary electrode comprises a metal plated onto the inert electrodes. The assembly of any one of claims 1 to 4, wherein the gap measurement system is configured to measure the gap between the at least one sensing element and the lower portion of the workpiece by applying an input signal wave to the at least one sensing element The impedance of the area. The component of claim 12, wherein the input signal wave has an amplitude of about 1 to 100 millivolts. The component of claim 12, wherein the input signal wave has a frequency of about 100 kHz to 10 MHz. The component of claim 12, wherein the input signal wave has a frequency of about 1 MHz to 10 MHz. The assembly of any one of claims 1 to 4, wherein the controller is further configured to use the distance measured from the gap measurement system to keep the proximal surface of the deposition head from the growing The distance between the surfaces of the deposited features. The assembly of claim 16, wherein the controller is further configured to maintain a constant distance between the proximal surface of the deposition head and the surface of the growing deposited feature on the workpiece. The component of claim 16, wherein the controller and/or the gap measurement system uses an empirical model that correlates impedance information between the proximal surface of the deposition head and the growing deposited on the workpiece The distance between the surfaces of the features. The assembly of any one of claims 1 to 4, wherein the plurality of inert electrodes are recessed within the plurality of holes in the insulating workpiece to allow metal to be electroplated from the auxiliary electrode onto the plurality of inert electrodes, and from the plurality of inert electrodes In addition to electroplating to the workpiece. The assembly of claim 19, wherein the holes in the insulating workpiece define the location of the metal that is plated onto the plurality of inert electrodes. A method of electroplating a plurality of laterally spaced features on a workpiece comprising: (a) positioning a deposition head in a first position, and while in the first position, electroplating metal onto a plurality of inert electrodes of a plurality of anode pixels of the deposition head; (b) before or after (a), measuring the gap between the deposition head and the workpiece, or another substrate at the location of the workpiece, wherein measuring the gap includes determining the impedance of the electrolyte adjacent the gap; and (c) using the gap measured from (b), positioning the deposition head in a second position adjacent the workpiece and, while in the second position, electroplating metal from the plurality of inert electrodes onto the workpiece, The lateral separation features are at least partially formed. The method for electroplating a plurality of laterally separated features on a workpiece as claimed in claim 21, further comprising: (d) it is judged that the transverse dividing features have not been fully formed; and (e) Repeat operations (a), (b) and (c). The method of electroplating a plurality of laterally separated features on a workpiece as claimed in claim 21 or 22, further comprising, after positioning the deposition head at the first position and before electroplating metal onto the plurality of inert electrodes, between the deposition head and the plurality of inert electrodes. Electrolyte is transported between the workpieces. The method of electroplating a plurality of laterally spaced features on a workpiece as claimed in claim 21 or 22, further comprising moving the deposition head to a third position adjacent the workpiece and electroplating the additional plurality of features on the workpiece. The method of electroplating a plurality of laterally spaced features on a workpiece as claimed in claim 21 or 22, further comprising etching a portion of the conductive seed layer on the workpiece. The method of electroplating a plurality of laterally spaced features on a workpiece as claimed in claim 21 or 22, wherein measuring the gap between the workpiece and the deposition head comprises measuring gaps at three or more spaced locations that are not in a line. The method of electroplating a plurality of laterally spaced features on a workpiece as claimed in claim 26, wherein positioning the deposition head at a second position adjacent the workpiece includes changing the position of the deposition head such that the workpiece and the deposition head are aligned in parallel on flat surface. The method of electroplating a plurality of laterally spaced features on a workpiece as claimed in claim 21 or 22, wherein positioning the deposition head at a second position adjacent the workpiece comprises attaching to one of the plurality of fine actuator elements of the deposition head One or more are actuated to position the proximal surface of the deposition head within a first gap distance to the surface of the workpiece, and/or to position the proximal surface of the deposition head parallel to the surface of the workpiece on the surface plane. The method of electroplating a plurality of laterally spaced features on a workpiece as claimed in claim 21 or 22, wherein positioning the deposition head at a second position adjacent the workpiece includes controlling movement along one or more of five axes, The five axes include three mutually perpendicular linear axes and two rotational axes.

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