TW202141593A - Electrochemical additive manufacturing of interconnection features - Google Patents

Abstract

A system and method of using electrochemical additive manufacturing to add interconnection features, such as wafer bumps or pillars, or similar structures like heatsinks, to a plate such as a silicon wafer. The plate may be coupled to a cathode, and material for the features may be deposited onto the plate by transmitting current from an anode array through an electrolyte to the cathode. Position actuators and sensors may control the position and orientation of the plate and the anode array to place features in precise positions. Use of electrochemical additive manufacturing may enable construction of features that cannot be created using current photoresist-based methods. For example, pillars may be taller and more closely spaced, with heights of 200 µm or more, diameters of 10 µm or below, and inter-pillar spacing below 20 µm. Features may also extend horizontally instead of only vertically, enabling routing of interconnections to desired locations.

Description

Electrochemical multilayer manufacturing of interconnection features

One or more embodiments of the present invention are related to the fields of electronics and three-dimensional printing. In detail, one or more embodiments of the present invention provide a system and method for adding interconnection features on a board body using electrochemical build-up manufacturing.

Laminated manufacturing, also known as 3D printing, is to produce complex structural parts and functional parts directly from CAD (Computer Aided Drawing) models through a laminating process. The build-up process is called build-up, so the process is to selectively deposit materials on the substrate to build the desired product. The build-up process also usually involves layer-by-layer stacking, which means the continuous composition of the layer system of the product to be manufactured.

Existing metal laminate manufacturing technology uses high-cost selective laser melting (SLM) and electron beam melting (EBM) systems, making it difficult to be widely used. In addition, most of the metal laminate manufacturing equipment in the industry currently melts powdered metal into one body to form the required parts. However, because most metals have high thermal conductivity, the unmelted metal powder is usually sintered at the outer edge to make the surface of the finished product. Uneven.

Emerging alternatives to the above-mentioned laminated metal manufacturing methods include electrochemical reaction manufacturing. The electrochemical process involves plating charged metal ions on the surface of an object in an electrolyte solution to construct metal parts. The focus of this technology is to make the deposition anode close to the substrate in the presence of the deposition solution (electrolyte), and then supply power to the anode to pass the charge through the anode, thereby creating an electrochemical reduction reaction on the substrate near the anode and depositing the material On the substrate. An example of a build-up manufacturing device using electroplating technology can be as described in the inventor’s US Patent No. 10,465,307 "Electrochemical build-up manufacturing device". The novel electrochemical multilayer manufacturing scheme of this device utilizes a print head with an anode array to simultaneously manufacture parts of each layer in a component, instead of moving a single anode on the component to construct parts of the layer sequentially.

This patent application is a partial continuation of the U.S. Invention Patent Application No. 16/941,372 filed on July 28, 2020. The case claims that the U.S. Provisional Patent Application No. 62/983,274 was filed on February 28, 2020 and August 2019. Priority of US Provisional Patent Application No. 62/890,815 filed on the 23rd, and the descriptions of these cases are incorporated herein by reference.

This application also claims the priority of U.S. Provisional Patent Application No. 63/069,203 filed on August 24, 2020, and the description of the case is incorporated herein by reference.

The known build-up process in this art usually adds material according to a pre-programmed pattern. For example, the print head sends out materials at a preset speed within a preset time to construct a layer of parts. In electrochemical manufacturing, the speed and pattern of material deposition depend on many dynamic factors, such as the distance between the print head and each position of the part, the local metal ion density in the electrolyte, and the electrolyte flow pattern. Therefore, it is difficult to ensure the quality of components using strict pre-programming ("open loop") control. However, the feedback control method of the electrochemical multilayer process is not yet fully developed.

One or more embodiments of the present invention relate to an electrochemical layered manufacturing method using deposition feedback control, which involves placing an array of cathodes and anodes in an electrolyte solution and constructing them on an object to be manufactured. The deposition anode in the anode array can provide a current flowing from the anode to the cathode through the electrolyte solution, so that the material is deposited on the cathode. The construction plan followed by this process includes a layer description of the multiple layers in the constructed object; each layer description can include a target map describing the presence or absence of materials at different locations in the layer, and one or more that affect the layer Program parameters established by the body. When manufacturing the layered body, the position of the cathode relative to the anode array must first be set or confirmed. Then, based on the description of the layer body, a control signal is sent to the anode array. Then, one or more feedback signals are measured on the entire anode array, and after analysis, a deposition analysis result is generated, which shows the degree of deposition progress at different positions in the layer. The deposition analysis can be used to determine whether the layer is complete and modify the program parameters associated with the layer. After one layer is completed, the subsequent layer body manufacturing can be continued.

In one or more embodiments, the corresponding layer description may be modified before one or more layers are manufactured, for example, the layer density may be changed.

The analysis of the feedback signal may include applying one or more transformations to the signal, such as morphological filtering or Boolean operators.

The feedback signal may include, for example, a current map on the anode array. Performing a threshold operation on this current map can produce a deposition analysis.

Determining whether the layer is completed can, for example, include comparing the actual number of pixels deposited in the layer with the number of pixels to be deposited. In the embodiment of the present invention, it can be determined that the layer has been completed when the actual ratio of the pixels to be deposited reaches or exceeds a threshold. In the embodiment of the present invention, when the gap between the desired segment of the pixel to be deposited and the actual deposited pixel is within a threshold, it means that the layer has been completed. In the embodiment of the present invention, the layer body can be divided into multiple component parts, and each component part can be tested for completion; when all the components of a layer body are completed, the layer body can be regarded as completed. For example, when the ratio of the actual pixel to the pixel to be deposited in a component reaches or exceeds a threshold, or when the difference between the desired segment of the pixel to be deposited and the pixel to be deposited in the component is within a threshold, it means that the The components have been completed.

In one or more embodiments, the layer description may include clarifying whether the layer has an overhang. The production of an overhanging layer may include depositing the overhanging portions sequentially so that they extend laterally from one or more previously deposited portions.

In one or more embodiments, the layer target map may be divided into different regions, and the construction of the layer body may include alternately activating the deposition anodes associated with each region.

In one or more embodiments, manufacturing a layer may include calculating a map of the desired current output from each deposition anode, so that this current output will produce a deposition corresponding to the target map of the layer. This current map calculation may involve applying one or more transformations to the layered target map.

In one or more embodiments, modifying the program parameters associated with a layer may include calculating the activation voltage, current, or time of one or more deposition anodes.

In one or more embodiments, setting or confirming the position of the cathode relative to the anode may include obtaining a sensor signal that changes based on the relative position, such as a current value or a voltage value.

In one or more embodiments, manufacturing a layer may include one or more maintenance actions for maintaining the anode array or the condition of the electrolyte solution. For example, these maintenance actions can replace one or more materials that have corroded deposited anodes. The maintenance action can activate one or more deposition anodes to remove the thin films formed thereon. Maintenance actions may include removing bubbles in the electrolyte solution.

In one or more embodiments, electrochemical build-up manufacturing can be used to fabricate one or more interconnect features, such as wafer bumps or pillars. A wafer, such as a silicon wafer or other substrate, can have one or more chip blocks, each with one or more connection points. The crystal plate may have a conductive seed layer. In order to construct the interconnection feature that is electrically coupled to the above-mentioned connection points, the conductive seed layer can be coupled to a power supply, contact the electrolyte, and align with an anode array; the current flowing from each deposition anode in the anode array The material can be deposited on the desired position on the wafer under control to form the desired interconnection feature.

When aligning the crystal plate with the anode array, one or more sensors can be used to determine the three-dimensional position and direction of the crystal plate relative to the anode array, and one or more actuators can be used to modify the three-dimensional position of the crystal plate relative to the anode array. Position and three-dimensional direction.

In one or more embodiments, after the material is deposited, the portions of the conductive seed layer that are not covered by the interconnect features can be removed. In the embodiment of the present invention, electrodeposition may be used to thicken the initial conductive seed layer.

In one or more embodiments, some or all of the interconnect features may have portions that are not substantially perpendicular to the wafer; for example, they may extend horizontally. These parts can be constructed by sequentially activating the horizontally offset anodes to increase the deposition level. In the embodiment of the present invention, the vertical part of one or more features can be deposited first, and then the inert material is deposited on the wafer to provide support for the subsequent horizontal part. In the embodiment of the present invention, the non-vertical feature can be constructed by rotating the wafer, so that the previously constructed vertical section is turned into horizontal, and then the subsequent part is deposited vertically.

In one or more embodiments, the anode arrays can be sequentially placed close to different groups of chips to construct interconnection features of each chip.

One or more embodiments of the present invention may include an electrochemical layered manufacturing system, which may be used, for example, to generate interconnect features. The system may have a reaction chamber in which an ionic solution that can be decomposed by electrolysis is contained. The system may have an anode array arranged in the reaction chamber and immersed in the ionic solution, and may have a substrate arranged in the reaction chamber, and the substrate contacts the ionic solution with a conductive seed layer on its surface. It may have a mechanical positioning system for modifying the position and/or orientation of the anode array and/or substrate, and may have a microcontroller, which can be programmed to send control signals to the mechanical positioning system to modify the anode The relative position and direction of the array and the substrate are such that the anode array and the substrate are substantially coplanar, and the anode array and the substrate are aligned with one or more features. The microcontroller can also add a three-dimensional model of interconnection features to the substrate. Based on this model, the microcontroller can control the current through each anode in the anode array to construct interconnection features on the substrate.

One or more embodiments of the electrochemical layered manufacturing system may include one or more additional devices for providing electrical connection with the conductive seed layer.

In one or more embodiments of the electrochemical layered manufacturing system, the substrate may have two or more wafer blocks. The microcontroller can position the anode array relative to the substrate one after the other and step through the wafer block. For example, it can send a first set of control signals to a mechanical positioning system to align the anode array with the first of the two or more wafers, and then control the current passing through each anode in the anode array, In this way, interconnection features are constructed on the first wafer block. Then a second set of control signals can be sent to the mechanical positioning system to align the anode array with the second of the two or more wafers, and then control the current through each anode in the anode array, thereby Build interconnection features on the second wafer block.

The following describes the system and method for adding interconnection features on wafers using electrochemical build-up manufacturing. One or more embodiments of the present invention can be used to manufacture objects, which involve depositing materials on the objects by passing an electric current through an electrolyte, and monitoring feedback signals during the deposition process to adjust process parameters in a timely manner during the process. In the embodiment of the present invention, the object to be manufactured can be, for example, a wafer with interconnection features added thereto, such as a silicon wafer with wafer bumps. In order to clarify the embodiments of the present invention in depth, many specific details are presented in the following example descriptions. However, those with general knowledge of the art should be able to implement the embodiments of the present invention, and it is not necessary to cover all aspects of the specific details listed here. In other examples, specific functions, quantities, or measurements known to those familiar with the art will not be repeated here, so as to obscure the characteristics of the present invention. Although the present invention is illustrated with examples, the limits of the present invention should be defined by the full scope of the claims and all equivalents.

The electrochemical layering process constructs metal parts by reducing the charged metal ions of the surface in an electrolyte solution. This technology relies on placing the deposition anode in the deposition solution (electrolyte) close to the substrate, and energizing the anode to cause the charge to flow through the anode, thereby generating an electrochemical reduction reaction on the substrate near the anode and depositing the material on the substrate superior. The difficulty of electrochemical manufacturing is that the speed and quality of material deposition vary greatly, and may vary at different times and at different locations based on various factors such as current density, electrolyte composition, electrolyte flow, and the distance between the anode and the previously deposited material. . In this regard, the inventor of the present case discovered that in electrochemical layered manufacturing, an important factor in the construction of high-quality components is the use of a "closed loop" feedback control system to monitor the deposition state during the entire manufacturing process and adjust manufacturing parameters accordingly. This solution is different from the "open loop" build-up process used by most 3D printers, which builds layers sequentially based on pre-programmed instructions.

Figure 1 shows exemplary steps of an electrochemical layering process including deposition feedback control. The steps shown are merely exemplary; other embodiments may utilize different or additional steps, and operations may be performed in a different order. The manufacturing process of FIG. 1 has a planning stage 100 and a construction stage 120. In the planning stage 100, the model 101 of the object is analyzed through the planning step 102 to generate a construction plan 103 for constructing the object. The planning step 102 can be executed on any processor 222, such as but not limited to a computer, a microprocessor, a microcontroller, a desktop computer, a portable computer, a notebook computer, a server, a mobile device, a tablet computer, or Network or any such processor. In the embodiment of the present invention, the planning step 102 may, for example, divide the three-dimensional object model 101 into several layers, and formulate a construction plan 103 for each layer. The construction plan 103 may include a layer description 111 of each layer; the layer description 111 may include, for example, a target map 112 of the layer and various program parameters 113 used to construct the layer. The target map 112 may include a two-dimensional grid or image, showing the position of the material to be deposited in the layer. The process parameters 113 of the layer can include any variables that affect the physical or electrical processes of the layer’s construction; these parameters can include, for example, but not limited to, current density range, voltage range, layer height, movement parameters, overhang Control, safety threshold, leakage threshold, short circuit determination threshold, pixel mapping interval and threshold, defoaming value, fusion, anode cleaning, islanding, short circuit distance, short circuit distance percentage, pixel limit, slow current control value and maximum spot size. FIG. 1 shows an exemplary layer description 111 of the first layer of an object, which includes the target map 112 of the layer and the program parameters 113 of the layer; the subsequent layers also have the layer description 111 including the target map and the program parameters. The construction planning step 102 can also generate overall program parameters 115 for applying to all layers, or can be used as preset values for layers without special layer descriptions.

The construction stage 120 of the procedure uses equipment for performing electrochemical deposition, for example, to construct an object from the construction project 103. Hereinafter, an exemplary device that can be used in one or more embodiments of the present invention will be described with reference to FIG. 2. To start the construction process, in step 121, the surface of the cathode 220 is contacted with the electrolyte solution 210; by passing current through the anode array 201 which is also in contact with the solution, materials can be electrochemically deposited on the cathode 220 to construct an object. Afterwards, the layers in the project 103 can be constructed sequentially on the substrate of the cathode 220 or the previously constructed layers, effectively expanding the cathode 2200 to facilitate deposition. Step 122 includes obtaining or loading the layer body description 111 for each layer in the construction plan 103. The layer description 111 can, for example, be loaded into a memory that can be accessed by a controller in the electrochemical deposition device; the controller can be any type of processor. For example, when starting the object construction, the first layer body description 111 can be loaded or obtained first. Then, the controller can execute step 123 to set or confirm the relative position between the anode and the cathode 220. As the layer system is constructed one after another, the distance between the anode and the cathode 220 may need to be modified to ensure that the distance between the anode and the newly deposited surface is maintained within a range that can be fully controlled by the deposition process. For example, the electrochemical deposition apparatus may include an actuator that can move the cathode 220 and/or the anode, as described below with reference to FIG. 2. For the first layer, step 123 may, for example, involve a “return to zero” step, which sets the initial relative position between the anode and the cathode 220 to a desired initial value. The specific method used for zeroing may vary depending on the deposition equipment. For example, in one or more embodiments, the controller can move the cathode 220 or the anode 0 until one or more sensors 223 indicate that the two are in contact (or close enough), and then they can contact the position from there. Offset a desired distance. In the embodiment of the present invention, the position actuator 224 may be provided with sensors such as absolute or relative encoders to facilitate zeroing.

For the layer body after the first layer, step 123 can ensure that the relative position between the anode and the cathode 220 is correct to start the material deposition of a new layer. In some cases, it may be necessary to modify the relative position, such as using an actuator to move the anode or cathode 220. For example, in some cases, the construction of an object may include successively depositing a layer of material, and then repositioning the cathode 220 relative to the anode, so that the cathode 220 is away from the anode, ready to deposit the next layer, and then the next layer of material. In other cases, the relative movement between the anode and the cathode 220 can be continuously performed during the process of constructing a layer, which is called "sliding", so that in step 123, when a new layer is loaded, there is no need to reposition it.

After loading the layer description 111 in step 122, and after setting or confirming the relative position between the cathode 220 and the anode in step 123, the construction phase 120 enters the inner loop 140 step to construct the loading layer. As described above, the loop 140 can be a closed loop with feedback control, so that the entire loop 140 can modify the construction steps and process parameters based on the measured feedback signal. Step 125 may include various actions of depositing materials through electrochemical reactions (for example, passing current through the anode) and actions of maintaining or adjusting the state or health of the anode array 201 and the electrolyte. Exemplary maintenance actions may include, for example, but not limited to, removing bubbles in the electrolyte, stirring the electrolyte to change the flow rate or changing the ion distribution in the electrolyte, and actions to remove the film on the anode or supplement the anode surface. Any of the above maintenance actions can be interspersed with the deposition actions in any desired manner.

At a selected time or fixed period in the layer construction process, step 126 may be performed to obtain, for example, a feedback signal regarding the deposition progress. The embodiment of the present invention can use any type of sensor 223 to obtain the feedback signal. For example, in one or more embodiments, the current passing through each anode in the anode array 201 (for example, having a fixed voltage) can be measured; a higher current may mean that the impedance between the anode and the cathode 220 is lower, which is related to each anode. The amount of material deposited on the nearby cathode 220. In other embodiments, fluctuating voltage waveforms can be used, and alternating current (AC) signals can be measured. Embodiments of the present invention can use other feedback signals, such as cathode optical images or distance measurements to different positions on the cathode 220. In step 127, these feedback signals are analyzed to generate a deposition analysis 128, which may include estimates of the amount of material deposited at different positions in the layer. Based on the deposition analysis 128, a decision 129 can be made as to whether the construction of the layer has been completed. If the layer is completed and the test 132 shows that there are other layers to be constructed, the next layer is loaded in step 122, and then the layer construction loop 140 of the next layer is executed; otherwise, the construction of the object is completed. In some embodiments, the generation of the deposition map may be performed simultaneously with the deposition process. For example, when the anode array 201 is manufactured, additional sensing elements can be added to analyze the characteristics of the current passing through each deposition anode or the voltage on the surface of each deposition anode. For example, an analog-to-digital converter (ADC) can be used, and the input of the ADC is connected to successively arranged rows of deposition anodes in a multiplexing manner similar to that used for addressing the anode array 201.

If it is determined that 129 shows that the deposition of a layer has not been completed, in some cases, the parameters and control signals used to construct the layer can be modified by referring to the deposition analysis 128 or other data from the feedback signal. The decision 130 can be used to determine whether adjustment is required. If adjustment is required, one or more program parameters 131 can be modified to change the control signal 124 that drives the deposition (and maintenance) action. For example, if the deposition analysis 128 shows that a certain area in a layer has deposited enough material, the anode corresponding to this area can be turned off (or reduced).

Fig. 2 shows a structural diagram of an exemplary equipment for construction steps that can be used to implement one or more embodiments of the present invention. The print head 200 of the system includes an array of deposition anodes 201 and an array of deposition control circuits 202 corresponding to the deposition anodes. In the embodiment of the present invention, the deposition control circuit 202 may be arranged in a matrix, thereby supporting a high-resolution anode array. The deposition anode array 201 can be arranged in a two-dimensional grid; FIG. 2 shows a cross-sectional view. A grid control circuit 203 sends a control signal to the deposition control circuit 202 to control the amount of current passing through each deposition anode in the anode array 201. The current through the anode is provided by a power distribution circuit 204, which directs the power from one or more power supplies 221 to the deposition control circuit and then to the anode. The print head 200 may also include other elements, such as an insulating layer for protecting the elements of the print head 200 from contact with the electrolyte solution 210.

The deposition anode array 201 of the print head 200 can be placed in the electrolyte solution 210. Then, through electrochemical reaction, the metal is electroplated on a finished part 230 coupled to the cathode 220. By changing the current passing through each anode in the deposited anode array 201, various complicated and delicate shapes can be constructed in the component 230. For example, in FIG. 2, the anode 211 is energized to deposit metal near the anode on the component 230, but the anode 212 is not energized, so no metal deposition occurs near the anode.

In one or more embodiments, the print head 200 can be integrated with the processor 222. The processor 222 can send a signal to the grid control circuit 203, which then sends a signal to the individual deposition control circuit 202 to turn the anodes in the deposition anode array 201 on or off (or change the current intensity through each anode). The processor 222 may be, for example, but not limited to a microcontroller, microprocessor, GPU, FPGA, SoC, single board computer, portable computer, notebook computer, desktop computer, server or network or any of the above devices Any combination. The processor 222 may be the same as or different from the processor 222 used to analyze the object model to construct the construction plan 103. The processor 222 may be connected to one or more sensors 223 for providing feedback signals of the metal deposition progress on the component 230. The sensor 223 may include, for example, but not limited to, a current sensor, a voltage sensor, a timer, a camera, a rangefinder, a scale, a force sensor, or a pressure sensor. One or more sensors 223 can also be used to measure the distance between the cathode 220 and the anode, such as resetting to zero before starting to manufacture an object, or setting or confirming the relative relationship between the anode and the cathode 220 before starting to manufacture each layer. Location. The accurate positioning of the wafer plate relative to the electrode array during the initialization of the deposition process has an important impact on the success and quality of the deposition. Embodiments can utilize various types of sensors 223 to achieve accurate positioning, including, but not limited to, mechanical, electrical, or optical sensors, or a combination thereof. In the embodiment of the present invention, a mechanical sensor such as a pressure sensor, a switch, or a load cell can be used to detect when the building wafer moves to a desired position. In the embodiment of the present invention, the system may be partially energized, and the cathode 220 may be moved to approach the energized component at a known position. When a voltage or current is detected on the cathode 220 or the construction wafer, it indicates that the construction wafer is at a specific position. Embodiments of the present invention can use other types of sensors to detect, for example, capacitance, impedance, and magnetic field, or determine the position of the cathode/built wafer relative to a known part through the Hall effect. Embodiments of the present invention can utilize optical sensors, such as laser rangefinders or sensors that can detect optical path interference.

Either or both of the cathode 220 and the print head 200 can be attached to one or more position actuators 224 to control the relative position of the cathode 220 and the deposition anode array 201. The position actuator 224 can control the vertical movement 225, thereby enabling the cathode 220 to rise (or lower the anode) during the construction of the component 230 as a continuous layer. In the embodiment of the present invention, the position actuator 224 can also move the cathode 220 or the deposition anode array 201 horizontally relative to each other, and can, for example, produce large parts at the end of the wafer block. The wafer block may correspond to a semiconductor die. In some embodiments, the number of wafer blocks may correspond to the same semiconductor die pattern. In some embodiments, different interconnection structures can be built on top of the same type of die. In this way, even if the pattern of the underlying die is the same, the customization of the wafer can be achieved.

The print head 200 can be connected to a power supply 221 (or multiple power supplies), the current 244 of which drives the metal deposition on the component 230 through the deposition anode array 201. The current may be distributed to the entire deposition control circuit 202 array via the power distribution circuit 204, which may, for example, include one or more power bus bars.

In one or more embodiments, the system may also include a fluid chamber (not shown in FIG. 2) containing the electrolyte solution 210, and a fluid processing system (also not shown in the figure). The fluid system may include, for example, a tank, a particulate filter, chemical-resistant tubing, and pumps. The analysis equipment can use, for example, conductivity, high performance liquid chromatography, mass spectroscopy, cyclic voltammetry stripping, spectrophotometer measurement or similar methods to analyze the continuous characteristics of the pH, temperature and ion concentration of the tank. The tank conditions can be maintained by coolers and heaters and/or an automated replenishment system can be used to supplement the evaporation loss of the solution and/or the ion loss of the deposition material.

Although the system shown in FIG. 2 only has a single deposition anode array 201, other embodiments may have multiple deposition anode arrays 201. These anode arrays 201 can, for example, be operated in different electrolyte solution 210 tanks at the same time, or they can be laid to cooperate to deposit materials on a common cathode 220 or a series of cathodes 220.

FIG. 3 shows the components of the object construction plan 103 planned with reference to the object model 101a. The object model 101a can be, for example, a three-dimensional CAD model, or any description of the object shape or material properties. The construction planning program can divide the model into several layers, and can establish a layer description 111 for each layer. Figure 3 shows four exemplary layers, each corresponding to a horizontal slice of the model 101a. The construction plan 103 can have any number of layers, and the slices can have any desired thickness, shape, and direction. The layer description 111 of each layer includes a target map and one or more program parameters. The four layers shown in FIG. 3 respectively have target maps 112a to 112d, and program parameters 113a to 113d. The target map may be, for example, a two-dimensional image, showing where the material should be deposited in the layer. In the target maps 112a to 112d in FIG. 3, the black pixels indicate the material to be deposited at the corresponding layer position, and the white pixels indicate that there is no material to be deposited. In the embodiment of the present invention, the target maps 112a to 112d may have non-binary values at different positions; for example, the target maps 112a to 112d may be described as grayscale images. In the embodiment of the present invention, the target maps 112a to 112d may include other information, such as the type of material or the material to be deposited at each location.

Fig. 3 shows three exemplary program parameters 301 to 303 of the layer body. In the embodiment of the present invention, the program parameters with the layer description 111 can be any number. The program parameters can describe any factors that affect the manufacturing of the layer body or affect the maintenance activities to be performed. The example program parameter 301 defines the current density used to construct the layer, and the specified unit is, for example, a percentage of the maximum current density supported by the manufacturing equipment. The example program parameter 302 indicates whether the layer requires side deposition of material. This parameter can be based on whether the overhang is detected by the construction planning system, as described below with reference to FIG. 6. For a layer that does not require side deposition, in one or more embodiments, the manufacturing system can make the position of the cathode perpendicular to the anode during the whole process of manufacturing the layer, so that while the layer is accumulated, the deposition material and the anode can be Maintain a relatively fixed distance; this "slip" action can, for example, reduce the chance of a short circuit between the anode and the cathode 220. The example program parameter 303 is the target height of the layer. In some cases, the height of the layer may be higher than that of the initial layer (for example, the layer of the target map 112d) to remove air bubbles. The overhanging layer (for example, the layer of the target map 112b) may have a lower height, for example, to ensure dimensional stability during construction.

The program parameters of the layer body can also include the target output 1007 of each anode in the anode array 201 when the layer is constructed. In simple cases, this output 1007 can meet the target map of the layer: the anode located at the material to be deposited can be turned on, and other anodes can be turned off. The relationship between the anode output 1007 and the target map may be more complicated in other cases, as shown in FIGS. 11A, 11B, 11C, and 12.

FIG. 4 illustrates the density manipulation of the base layer 403 of the target map 112d of the object 101a. This layer system is first added to the cathode 220, and then other layers are constructed on top of the base layer 403. For the base layer 403 (or a group of base layers 403), the layer density should be reduced to make it porous, so that the object can be removed from the cathode 220 after the manufacturing is completed. By manipulating the target map to reduce the number of pixels at the material to be deposited, the density can be reduced. For example, at random locations where the probability is 100% lower than the target density, the deposition can be turned off. In FIG. 4, the density 401 parameter is applied to the original target map 112d to generate a modified target map 402, in which 70% of the pixels of the original target map have been turned off (the "off" pixels are shown in white in the figure). The modified target map 402 has the base layer 403 deposited on the cathode 220 (shown in the vertical section of FIG. 4). The additional layer 404 is constructed on top of the base layer 403 to complete the part. The porous structure of the base layer 403 facilitates the removal of the component 405 from the cathode 220.

Figures 5 and 6 show an exemplary construction plan and the manufacture of a layered body with significant overhang. Overhang refers to the feature of horizontal extension and no material support on the underlying layer. In traditional three-dimensional printing of plastic materials, these overhangs must have a clear support structure, and then be removed in a post-manufacturing step. However, in electrochemical layered manufacturing, since metal ions can accumulate laterally and fuse into an overhang structure with sufficient strength without supporting underneath, many overhangs can be directly constructed without adding support structures. Fig. 5 shows how to identify overhangs in one or more embodiments. For example, the difference operation 501 can be used to compare the target map 112b of the layer body with the target map 112c of the layer below (or multiple layers below), thereby generating an abnormal data comparison map 502, which shows the area where materials are added but no support is provided below 503. If the size of these areas in the area 503 is larger, the construction planning system can determine 504 that the overhang requires special treatment, such as side construction, as shown in FIG. 6. The illustrated manufacturing step of FIG. 6 is used to manufacture the small part 601b of the layer body of the target map 112b overhanging the area 601c of the layer body below the target map 112c. This part 601b is a "bridge" effectively erected on the two supporting columns 610. The support column 610 has been made in the previous layer, and its top corresponds to the area 601c of the target map 112c. The layered body of the bridge on the target map 112b is constructed in three exemplified sub-steps. First, the material 611 is added to the top of the support column 610; this sub-step corresponds to the subset 621 of the target map 112b. Secondly, the material 612 is added laterally from the supporting column 610, corresponding to the subset 622 of the target map 112b. Third, a material 613 is added laterally in the middle section, which corresponds to a subset 623 of the target map 112b, resulting in a final structure 614. The number of side construction steps required may vary depending on, for example, overhang size and material bonding strength.

In one or more embodiments, the overhanging treatment may also include reducing the height of the layer in the overhanging area to achieve the desired deposition. The specific method can be, for example, changing the height of the layer body so that the overhang distance matches a certain ratio of a certain pixel pitch. For example, to make a 45-degree overhang with a pixel pitch of 50 um, the layer height can be set to 50 um, so that the overhang distance will be 50 um (1 pixel width). At 60 degree overhang, the height of the layer body is within 29 um and the overhang distance can be 50 um. The above two examples are of a 1:1 ratio, where the overhang distance of each layer is increased by 1 pixel. If the ratio is 2:1, the height of the layer is doubled, so the overhang distance of each layer is 100 um or 2 pixels. In this way, a more stable and fixed overhang construction can be produced, regardless of the overhang angle.

Figures 7 to 10 show examples of feedback signals and their analysis to determine whether the layer is built or whether it is necessary to modify the parameters of the layer system. FIG. 7 shows a feedback method based on the current sensor 223a, which can be connected to the anode of the deposition anode array 201, for example. Since the impedance between the anode and the cathode 220 varies with the distance between the anode and the conductive material deposited on the cathode 220, the current sensor 223a can be used to estimate the degree of deposition closest to each anode in the anode array 201. For example, the anode can be set to a known voltage, and the current through each anode can be inversely proportional to this impedance. FIG. 7 shows exemplary anodes 701 to 706, and a partially constructed exemplary component 230a. The current sensor 223a measures the current 710 through each anode. In the case of anode 703, the anode has formed a short circuit with the deposited material; therefore, the measured current 713 is extremely high. As for the anode 704, the anode is very close to the deposited material, but is not completely short-circuited, so the measured current 714 is lower than the potential 719 of the short-circuited anode 703. The anode 701 is far away from the deposited material, so the measured current 711 is extremely small.

In one or more embodiments, the feedback signal, such as the data of the current 710 sensor, can be processed to further generate an analysis of the degree of deposition at different locations within the component. This processing can be based on the known or estimated relationship between the degree of deposition and the feedback signal, for example. FIG. 8 shows an example analysis of a two-dimensional map 801 of the current measured by the current sensor 223a. In this map 801, brighter pixels correspond to higher measured currents. The analysis of step 127 of the current map 801 can, for example, use the threshold operation 802 to select pixels that exceed a specified current intensity to generate a preliminary deposition analysis 128. This example deposition analysis 128 is a binary image, where white pixels show higher deposition areas and black pixels show lower deposition areas. The threshold operation 802 is only illustrative; other embodiments can use any suitable method to analyze the feedback signal of the map 801 to generate the sedimentation analysis 128. This deposition analysis 128 can then be used to determine whether the deposition of the layer 129 is complete, and to determine whether any program parameters need to be modified for subsequent layer construction. 9A and 9B show an example analysis of the layer completion degree of the judgment 129, and FIG. 10 shows an example analysis of the program parameter modification of the judgment 130.

FIG. 9A shows an exemplary procedure for comparing the deposition analysis 128 with the layer target map 900 to determine whether the layer has been manufactured. The target map 900 indicates where the material should be deposited in the layer, where the black pixels correspond to the material, and the white pixels correspond to no material. The deposition analysis 128 shows a high current area, which can represent, for example, a short circuit area where the anode is in contact with or in close proximity to the deposition material. In an embodiment of the invention, the deposition analysis 128 may be further processed to estimate where material has been deposited in the layer. For example, any conversion technique can be used to modify the image of the deposition analysis 128, including but not limited to morphological filtering, linear or non-linear filtering, or Bollinger operations. The operation 901 shown in FIG. 9A is an expansion operation (which is a morphological filter); this operation expands the white pixel region by adding pixels to the boundary. As a result, the revised map 911 can provide a clear indication of where there has been deposition, as the anode may also have a high degree of deposition due to, for example, a location close to the short-circuited anode. Then, the revised map 911 can be compared with the target map to determine the degree of conformity between the estimated deposition of the layer body and the desired deposition. Operation 902 first inverts the target map 900, so that the deposition analysis of the inverted target map 912 and the modified map 911 both correspond to the deposition location with white pixels. The number of white ("open") pixels 913 in the reversal target map 912 indicates how many positions in the layer body should accept material deposition. Then the modified deposition map 911 and the inverted target map 912 can be ANDed in operation 920; the generated map 921 shows the corresponding material deposition (according to the target map) and the actual material deposition (according to the deposition analysis) The pixel of the position. The number of white ("opened") pixels 922 in the map 921 can then be compared to the desired number of "opened" pixels 913; the ratio 923 of the above values is the percentage of the level of completion of the layer. In the embodiment of the present invention, the completion percentage is comparable to a threshold, and when the threshold percentage is reached or exceeded, it means that the layer is completed. The calculations 901, 902, and 920 shown in FIG. 9A are only illustrative; other embodiments can use any transformation or calculation to process the deposition analysis 128 or the target map 900 to determine whether the layer has been manufactured, including but not limited to morphological calculations. For example, operation 901, or Boolean operation, such as operation 902 and operation 920.

The limitation of the method in FIG. 9A is that the overall completion percentage of a layer may be high, but the completion of specific sub-regions is low. In some cases, all sub-areas on the first floor must reach a high completion percentage. Figure 9B shows an exemplary extension of the method of Figure 9A, which applies a completion threshold to a sub-region. In the embodiment of the present invention, any desired method can be used to define the sub-regions. For example, the layer body can be divided into regular wafer block grids with any resolution, and the completion standard can be applied to each wafer block. Figure 9B shows how to divide the target map into connected components "islands", and apply the completion criteria to each island separately. The target map 912 (inverted in FIG. 9A so that the white pixels correspond to the desired deposition) has four islands 912a to 912d; each island is a connected component, and different islands are not connected to each other. The revised sedimentary analysis map 911 is divided into these island areas, and four sets of sedimentary analysis corresponding to islands 912a to 912d are generated. In each island sedimentation analysis, the percentage of white ("open") pixels indicates the degree of completion of sedimentation on the relevant island. Then, the completion percentages of individual islands 923a to 923d can be analyzed to determine whether the layer is completed. For example, a threshold can be applied to the completion percentage of each island, and only when all islands reach or exceed the threshold can it be determined that the layer has been completed. In the embodiment of the present invention, different completion standards can be applied to different islands, and only when each island meets its respective completion standards, the entire layer can be determined to be completed.

In one or more embodiments, other factors can be used in conjunction with or instead of the completion percentage of the desired deposited pixel to be used as the criterion for determining whether the layer or individual island is completed. For example, if all or a specific number or segment of pixels to be deposited in a layer or island are within a specified threshold distance of one or more deposition pixels, it can be determined that the layer or island has been completed. The pixel group that should have material deposition and the pixel group that has material deposition (to the desired degree of completion) can be determined by the above method. In some embodiments, the elapsed time of the deposition, the material used for the deposition, the overall current and/or the impedance between the electrodes can be used to determine whether the layer is completed.

The example shown in FIG. 10 illustrates how to use the deposition analysis 128 to adjust the program parameters in the process of constructing the layer body until the layer body is determined to be completed. Regarding the completion of the analysis, the sedimentation analysis 128 can be converted first using any kind of filtering or calculation. FIG. 10 shows the deposition analysis of the modified map 1002 generated by the corrosion operation 1001 in the deposition analysis 128. The erosion operation 1001 is an example of morphological filtering, which reduces the white pixel area by removing the pixels at the boundary of the area. Therefore, the generated map 1002 can provide a more conservative estimate of the existing deposits. The corrosion operation 1001 is merely illustrative; other embodiments may apply any type of transformation to the deposition analysis 128, including but not limited to morphological filtering, linear or non-linear filtering, or Bollinger operations. The modified map 1002 can be inverted in operation 1003 to produce a map 1004 in which the black pixels correspond to the corrosion area of the deposition, and the white pixels correspond to the locations that may lack sufficient deposition. This map 1004 can then be "ANDed" with the inverted target map 912 to generate a map 1006 that can be used to modify the parameters of the subsequent construction of the layer. In the map 1006, the white ("opened") pixels correspond to locations where deposits should be made but not yet fully completed. Therefore, this map 1006 can be used to set the output 1007 of the anodes in the anode array 201 so that the anodes corresponding to the "on" pixels in the map 1006 continue to be deposited. The anode output can be set by, for example, setting anode current 1011, setting anode voltage 1012, setting anode duty cycle 1013, or using a combination of these methods.

FIG. 10 illustrates the feedback control of the binary control signal generated by the anode, such as a map 1006. The anode can then be turned on or off based on these control signals. In the embodiment of the present invention, the anode control (or the control of any other program parameters) can utilize non-binary control signals; for example, the anode current can be continuously changed from zero to the maximum value based on the analysis of the feedback signal.

Although the use of the high-resolution anode array 201 can provide fine control of the deposited material, in some cases, the material deposition pattern on the cathode may not exactly correspond to the pattern of the anode output. Therefore, one or more embodiments can deal with this effect by pre-processing the target map to achieve the effect of adjusting the anode output. For the convenience of explanation, FIGS. 11A, 11B, 11C, and 12A use a one-dimensional anode array model to explain the above procedure. Similar concepts can be applied to a two-dimensional anode array in one or more embodiments; a two-dimensional example is shown in Figure 12B.

FIG. 11A shows the deposition 1111 on the cathode 220 when only a single anode 1101 in the anode array 201 is energized. In some environments, the material can be deposited on the cathode not directly opposite the energized anode. For example, the deposition 1111 can form an approximately Gaussian pattern whose center is facing the energized anode and expands outward from the center side. FIG. 11B shows an exemplary deposition pattern 1112 when a plurality of anodes 1101, 1102, and 1103 are energized. In this scenario, the deposition pattern may be roughly the sum of the deposition patterns 1112 of each individual anode 1101, 1102, and 1103. In detail, in FIG. 11B, due to the layering effect from all three anodes 1101, 1102, and 1103, the center of the deposition (opposite the anode 1101) is higher than the edge.

If the deposition patterns of individual anodes are combined in layers, the overall effect of the phenomenon shown in FIGS. 11A and 11B will be changed by the point spread function 1140 describing the deposition diffusion of a single anode point source through convolution 1141 to change the anode output pattern. FIG. 11C shows an exemplary pattern 1130 of anode current, which remains unchanged from the boundary 1121 to 1122, and is zero outside this range. Due to the convolution 1141, the actual deposition thickness does not conform to the input shape of the pattern 1130, but produces a shape 1150 with a higher center accumulation and some depositions extending beyond the boundaries 1121 and 1122. The effect shown in FIGS. 11A and 11B smoothes the effective sharp corners of the anode current pattern 1130. Therefore, one or more embodiments can modify the anode current to correspond to this convolution 1141 or other effects that cause deformation of the deposition pattern. Figure 12A shows an exemplary solution that can be used in one or more embodiments. Based on the target map 1201 that describes the target thickness of the layer as a position function, the construction planning program can perform a convolution or other transformation to transform 1210 to reverse the deformation effect shown in FIGS. 11A to 11C. For example, the target map 1201 with a fixed thickness between the boundaries 1121 and 1122 is deconvoluted to become the anode current pattern 1211. To compensate for the spreading effect of the deposition point spread function 1140, it is illustrated that the anode current edge value 1212 is relatively high, and some anodes in the central area of the regular pattern, such as 1214, can be completely turned off. In addition, some anodes, such as anode 1213, may still have non-zero current even if it exceeds the boundaries 1121 and 1122. The above effects are only illustrative; other embodiments can generate any desired anode current pattern 1211 to achieve the desired layer thickness pattern of the target map 1201. The conversion 1210 may include any deconvolution method or any other function conversion or image processing method. These conversions can be based on any measurement or deposition process model, including, for example, a point spread function 1140 that describes how the anode current 1011 maps to the deposition pattern.

FIG. 12B shows a two-dimensional example of the target map 1220 converted into a desired anode current pattern. The target map 1220 shows the desired deposition area (black) of a specific layer in the construction of a part. As described above, for example, a transformation 1210 including deconvolution or any other type of image processing can be applied to the target map 1220 to generate a pattern 1230 showing the anode current pattern generated to achieve the desired deposition. In this example, the anode corresponding to the anode to be deposited is turned off, and the additional anodes around the edges and corners of the deposition area (shown as cross-hatched areas) are turned on. For example, the edge anodes around each outer edge are opened, such as the anode 1231 extending along the top edge, and the additional anodes around the corners are also opened, such as the anode 1232 around the upper right corner. Opening the above-mentioned extra edge and corner anodes helps to shape the current field, so that the material deposition at the edges and corners of the corresponding target map 1220 is more uniform.

One or more embodiments can also change the anode current over time according to a preset or adaptive mode, as shown in FIG. 13. For example, in one or more embodiments, different groups of anodes can be turned on sequentially during the process of manufacturing a layer. If the anode outputs a constant current during the whole process of constructing a layer, the metal ions in the electrolyte are easily depleted, and such alternation can play a compensation role at this time, and can also prevent the formation of bubbles in the electrolyte. In the example shown in FIG. 13, the material is deposited in the square central area 1301 of the target map 112e. The embodiment of the present invention can alternately provide current from the two sub-areas 1311 and 1312 in the checkerboard-shaped area 1301, instead of continuously emitting current from all anodes corresponding to the area 1301. In stage 1321, the anodes in area 1311 emit current 1331, and the anodes in area 1312 are turned off; in stage 1322, the anodes in area 1311 are turned off, and the anodes in area 1312 emit current 1332. This alternation allows the ions 1310 in the electrolyte to diffuse into the area adjacent to the shut-off anode, avoiding the depletion of ions in these areas. The checkerboard patterns of areas 1311 and 1312 are only illustrative; other embodiments can divide the anodes into any number of areas with any shape and size, and the anodes in these areas can be opened or opened in any pattern according to any desired duty cycle. Shut down.

Figure 14 shows exemplary maintenance actions that can be performed during the manufacturing process in one or more embodiments. These actions can be interleaved with deposition, for example, or can be performed between the production of two layers. The actions shown in the figure are merely illustrative; other embodiments can perform any desired maintenance activities at any point in the manufacturing process. Figure 14 shows the three problems that may require maintenance activities during the manufacturing process. First, the anodes in the anode array 201 may corrode, such as the anode 1401, so the surface needs to be supplemented or re-treated. Second, the thin film 1402 may be formed on the anode, impairing the efficiency of the formation and deposition of the anode on the cathode 220. Third, bubbles 1403 may be generated in the electrolyte between the anode array 201 and the deposition material 230.

With the prolonged use time, even if most of them are constructed of insoluble materials, anodes such as the anode 1401 may still be corroded. Embodiments of the present invention may use auxiliary anode 1410 to reverse corrosion periodically or as needed. At this time, the deposition process can be suspended, and the switches 1411 and 1412 are used to reverse the power supply 221, so that the anode array temporarily functions as the cathode 220, and the auxiliary anode 1410 functions as the anode. The current from the auxiliary anode 1410 can cause the material 1413 to flow from the auxiliary anode 1410 to the anode in the anode array 201 where corrosion occurs. The auxiliary anode 1410 may be a bulk anode made of an inert material 2112 such as platinum. The auxiliary anode 1410 can be made of a metal used for electrodeposition, such as copper; this metal can be dissolved and attached to the anode of the anode array 201 without consuming the metal in the electrolyte solution 210. When the switches 1411 and 1412 are reversed again, the metal covering the anode array 201 turns to cover the cathode 220.

In some cases, the target deposition material (for example, copper in a copper electrolyte tank) may form a thin film 1402 on the surface of the electrode array and bridge between multiple deposition electrodes, which may affect the individual addressing effect of the electrodes. For example, when the current of a group of adjacent anodes is abnormally high, the existence of this thin film 1402 can be detected in the self-feedback signal. The film 1402 can be removed by, for example, moving the cathode 220 away from the anode array 201 and activating the anode covered by the film 1402. This action can dissolve the thin film 1402 and will not cause accidental deposition on the cathode 220.

During the electrolysis, air bubbles 1403 may form in the space between the anode array 201 and the component 230. Ways to remove air bubbles include, for example, using a pump or agitator to control or change the flow of the electrolyte 1420, or introduce vibration 1421 into the electrolyte to eliminate air bubbles 1403. The introduction method of the vibration 1421 can be to contact the electrolyte with an oscillator, or to vibrate the cathode 220, the anode array 201 or the reaction chamber. The fluid flow control can also include deliberately increasing the distance between the structure and the anode array 201 to increase the flow rate and/or remove air bubbles 1403, while keeping the anode energized or de-energized until the flow control is completed.

In one or more embodiments, all or part of the feedback signals, control parameters, and deposition analysis measured or generated during the construction of the component may be retained as a quality control record. This data can be used for a variety of purposes, including, for example, facilitating or omitting component inspections, supporting component or process certification, and post-analysis when component failures or component performance problems occur. In addition to providing detailed tracking of specific manufacturing steps and the parameters of each component, the above-mentioned quality control data can be accumulated across components, batches or facilities, and used for statistical process control and continuous process improvement. For example, component field performance data (such as failure rate or component service life) can be connected to component quality control data to confirm the correlation between process parameters and component performance; these correlations can be used to improve future component construction procedures. In the embodiment of the present invention, machine learning technology or other artificial intelligence technology can be used to confirm the correlation between construction record information and component performance. For example, analysis of a large number of parts and their related quality control records may show that the lower current density of a particular type of layer may be the reason for the higher failure rate of the parts; manufacturers can use this information to adjust the construction process to reduce future failures Rate. When the relationship between construction parameters and component performance is confirmed, the component construction quality information database can be used to predict the failure of previously manufactured components to facilitate recall or early replacement.

Figure 15 shows an exemplary component 1501 manufactured using an embodiment of the present invention. The process feedback control using the above-mentioned technology is conducive to achieving excellent resolution and quality of the finished part 1501.

In one or more embodiments, the process described above may be used to add interconnect features, heat sinks, or similar structures to wafers such as silicon wafers. The interconnect structure may be called, for example, "wafer bumps" or "pillars." Precisely formed conductive interconnect structures are a key component of semiconductor and electronic packaging. Due to the increase in technical requirements, the interconnection density of each area increases, or more and more slender and dense features need to be placed in the package. Electrochemical build-up manufacturing is more capable of constructing effective interconnection structures than currently known procedures in the art.

The traditional wafer bumping process involves many steps and is relatively complicated. First, a conductive thin film is deposited, usually a metal material, called a "seed" layer. Second, a photoresist is applied, exposed, and established to define the bump placement position. Then, the material is deposited on the photoresist through an electrodeposition step. In the defined opening. Finally, the photoresist and the seed layer are removed, leaving an independent electrical insulating structure on the substrate.

Due to the defined area of the photoresist and the sidewalls of the deposited bump material, the main limitations of the shape and spacing of the bumps depend on the photoresist ability, including the aspect ratio (vertical feature dimension relative to the horizontal feature dimension) that the photoresist can distinguish, minimum diameter, and maximum Overall height and spacing between adjacent bumps. Another problem with photoresist processing is that a new mask must be made every time a new connection pattern is added. Therefore, the wafer bumping process that does not need to rely on or reduce the photoresist step not only helps to reduce manufacturing costs and improve time efficiency, but also helps to achieve better interconnect structure performance.

FIG. 16 shows a technique of using electrochemical layered manufacturing to add wafer bumps, which can provide, for example, the above-mentioned advantages. One purpose is to add wafer bumps or similar structures on the wafer 1601. The wafer 1601 can be, for example, a silicon wafer or any substrate on which circuits or components can be provided. The crystal plate 1601 can be of any size or shape, and can be made of any material. It may include one or more wafer blocks, such as the exemplified wafer block 1602; each wafer block may, for example, include one or more circuits, or insulated electronic or electrical components. The crystal plate usually adds conductive structures on one or more surfaces. These structures can have electrical conductivity, thermal conductivity, or both, for example. Its function can be, for example, used to connect to other circuits or devices, serve as a heat sink to help the circuit on the wafer 1601 dissipate heat, or perform mechanical functions such as alignment or addition. To construct such a structure, the wafer 1601 can be connected to the cathode 220 in the device shown in FIG. 2. The anodes in the self-deposited anode array 201 contact the surface of the wafer through the current of the electrolyte solution 210, and the interconnection structure, such as bump 1603, is generated by deposition. The amount of current from each anode deposits the connection structure material in a precise pattern under controlled operation. The completed wafer 1611 may include multiple interconnect structures on the entire wafer. The completed chip block 1612 illustrated on the wafer 1611 has five wafer bumps, each of which is connected to a corresponding connection point on the circuit 1613 inside or adjacent to the chip block; for example, the bump 1603 is connected to the connection point of the circuit 1613 1614.

Figure 17 shows a flowchart of exemplary steps that can be used to fabricate interconnect structures or similar features on a wafer in one or more embodiments. In step 1701, a wafer is obtained; the wafer may include one or more wafer blocks, each including one or more connection points. The crystal plate may have a conductive seed layer, which may be deposited on the surface of the crystal plate, for example. In step 1702, the wafer is coupled to a power supply (for example, connected to the cathode 220 in FIG. 16 via an additional device); for example, the additional device can be electrically connected to the conductive seed layer of the wafer. In step 1703, the surface of the crystal plate, such as the surface of the seed layer, is placed in and in contact with the electrolyte solution 210. In step 1704, the crystal plate is accurately aligned with the anode array 201; this alignment can be adjusted by adjusting the crystal plate and/or the anode array 201 to set the relative position and direction between the two. In step 1705, current flows from the anodes in the anode array 201 through the electrolyte to construct interconnection features.

Step 1705 can construct features layer by layer, as described above. The layer body can be any height. The inventor of this case found that the deposition quality is better when the layer height is smaller, and the voltage and current density required for electroplating are smaller. The exemplary layer height used in one or more embodiments of the present invention is less than 5 micrometers; other embodiments may use a layer height of less than 1 micrometer to improve control and deposition quality. In some cases, adding a higher current density or anode voltage to the initial layers and/or shortening the height of the layer helps to form localization of the initial deposition. In some cases, the use of different parameters in the final (top) layers of the deposition helps to improve the surface quality of the sides and top of the deposition structure. Specifically, the working distance can be increased beyond that of the structure. The rest and reduce the current. For example, if the working distance of each layer of most buildings is 10 microns, it can be increased to more than 25 microns here. In this way, the deposited structure can be covered with a low-localized high-quality material layer.

In step 1705, the above feedback control technology can be used to control the manufacturing process. An exemplary feedback control method may include, for example, measuring the current through each anode. The current measurement method can be to turn on one anode at a time and measure the current through the entire anode array 201. Alternatively, in one or more embodiments, a voltage-sensing digital-to-analog-to-digital converter can be connected to the surface of each anode. When the voltage drops, it means that the deposition has approached or touched the anode, and the anode is in a grounded state. By knowing the resistance of the pixel, the voltage drop at the anode (surface voltage minus the supply voltage) can be divided by the anode resistance to calculate the anode current. The advantage of this technology is that it can provide current mapping data without stopping the deposition process, and can provide the actual anode current during the deposition process, so that it can reveal information that cannot be found by sensing the anode at a single time, such as the solution attenuation effect.

Based on feedback signals (such as current or voltage measurements), the system can modify the current through individual anodes. The anode can be turned on or off (binary control), or the amount of current passing through the anode can be changed (continuous control). When the anode is turned off, the anode can be switched to high impedance mode (non-grounded) to stop the current passing through the electrode. Alternatively, in one or more embodiments, the way to turn off the anode may be to set the anode to a predetermined voltage instead of entering a high impedance state. This voltage can be specially selected to be greater than 0 V or ground potential, but lower than the voltage through the anode current. Generally speaking, the electrochemical system is defined by the combination of anode material, plating solution composition and electrode shape (size/interval), and a nonlinear relationship is generated between anode voltage and system current. For each electrode and plating solution combination, the above-mentioned relationship can be analyzed with characteristics to grasp the voltage at which an electrode can maintain the potential without significant current flow or material deposition. More specifically, when used as an anode, platinum has a higher voltage than copper. When a copper film appears on the platinum electrode, the electrode can be set to the copper threshold voltage; the copper will pass the current and dissolve into the solution, but when the copper is all removed, the potential will drop to the point where no significant current flows through the system. Therefore, the anode or system current can be measured to analyze when the removal of the copper film is completed. In some cases, even after a short circuit is measured on the anode, the anode can be kept energized for a period of time. This method may affect the top surface conditions of the deposition and the resulting feature diameters.

Since the deposition in different locations may require varying current densities, the anode current can continue to vary. For example, in a bump array where all anodes meet the same current density, the bumps inside the array are built faster and thicker, with less deposited material at the edges and less at the corners. Based on the anode's position, size, or other measured values (if ions are exhausted at one location, even real-time current measurement can be considered), different voltage/current densities are assigned to it to analyze and compensate for the above-mentioned differences. However, in some embodiments, the anodes in the anode array 201 may be controlled in batches or collectively. In these types of embodiments, each interconnection pillar may correspond to an anode in the anode array 201. In some embodiments, for devices requiring the deposition of thousands of features, the corresponding anode array 201 includes thousands of anodes that can be individually controlled. This setting is different from multiple anode applications when the number of anodes is much smaller than the number of features, such as those used in some shielded systems.

In some embodiments, several anodes in the array can be energized to form continuous deposition. For example, a 3x3 grid anode activated on a uniform grid with 15 micron intervals can also achieve a size of 45 micrometers x 45 micrometers. Single square deposit. Alternatively, various sub-pixel shapes can be used to assist electric field control and improve the control of deposition growth. For example, a central anode element and an external anode element can be used to compensate for the uniform variation of the deposition from the center to the outer diameter.

Figures 22A, 22B and 22C show three example types of electrode configurations: Figure 22A shows a non-independently controlled independent electrode; Figure 22B shows a non-independently controlled non-independent electrode; Figure 22C shows an independently controlled independent electrode, which can For example, an anode array 201 is used for implementation.

In the embodiment shown in FIG. 22A, the anode is not electrically independent and not independently controlled. The three exemplified anodes 2201, 2202, and 2203 can be made of a conductor 2204, for example, and simply cover the surface of the openings 2205 and 2206. When approaching the substrate, independent deposition begins to form, but since the electrode is not electrically insulated, when the deposition grows enough to cause a short-circuit contact between the anode and the cathode 220, the current flows preferentially through the deposition rather than through the solution to form the remaining deposition. By carefully paying attention to the deposition current after adjusting the anode/cathode 220 gap to detect the impending contact, the above-mentioned short-circuit effect can be alleviated.

In the embodiment shown in FIG. 22B, the exemplary anodes 2211, 2212, and 2213 are electrically independent, but not independently controlled. The electrodes can be electrically independent using, for example, resistors, so they are isolated from other anodes. For example, the anodes 2211, 2212, and 2213 are separated by resistors 2214, 2215, and 2216, respectively. When a group of anodes is activated, its deposition grows, and when the deposition grows and touches the corresponding anode, the insulating resistor can limit the short-circuit current through the anode, and allow current to pass through the remaining anodes and continue to increase their individual deposition.

In the embodiment shown in FIG. 22C, the example anodes 2221, 2222, and 2223 can be individually and independently controlled via corresponding switches 2224, 2225, and 2226, respectively. It should be noted that although the blade symbol is used to represent the switch in the figure, the switch can be of different types and can provide an independently controlled non-binary (analogous) control signal to the anode.

Figure 18 shows a variation of the device of Figure 16 that can be used in one or more embodiments to construct interconnect features or other structures. In this exemplary device, the anode array 201 is vertically located above the crystal plate 1601 and the cathode. The positioning of the wafer 1601 can be done in a manner known in the semiconductor manufacturing field, including mechanical clamping, vacuum chuck, and so on. In some cases, the electrical connection leads to the surface of the substrate. The electrical connection can be through a clamping assembly or a separate chip. The wafer can be pre-covered with a conductive "seed" layer 1601a for power connection. In the example shown in FIG. 18, the wafer 1601 is held in position by clamps 1801a and 1802a, and 1801b and 1802b or clamps. Any number of clamping points can be used in one or more embodiments. The solid lines of the connectors of the clamps 1801a and 1801b are in electrical contact with the conductive seed layer 1601a of the crystal plate 1601, so that the seed layer is coupled to the ground of the power supply circuit and can be used as a cathode for electrodeposition.

The mechanical positioning system can be used to set, modify and maintain the relative position and direction between the anode array 201 and the wafer 1601. In some embodiments, it can be used to maintain a fixed gap between the surface of the deposition material and the anode array 201 during the deposition process. It can also align the anode array 201 and the crystal plate 1601 to ensure that the structure deposition occurs at a set position. The direction of the anode array 201 relative to the crystal plate 1601 can be controlled to ensure that the anode array 201 and the crystal plate 1601 are substantially coplanar. The mechanical positioning system may also include a sensor 223 to determine the relative position between the anode array 201 and the crystal plate 1601, including but not limited to linear potentiometer, linear variable differential transformer (LVDT), Hall effect capacitive Laser rangefinders, lasers and other similar linear encoder types. The sensor 223 can inspect the position or direction of the crystal plate 1601 relative to the anode array 201 by optical or electrical methods, for example. For example, in some embodiments, a high-magnification optical system can be used to observe the positions of the alignment marks on the anode array 201 and the wafer 1601, and determine their relative offset. In one or more embodiments, the grooves or straight sections on the wafer 1601 can be used to align the device to the wafer 1601 and roughly locate the features on the wafer 1601. In some embodiments, the anode array 201 itself can be used for measurement to determine the coplanarity of the anode and the substrate. These measurements can include, for example, using the capacitance readings of the substrate seed layer, or voltage or current, or the A/C impedance measurement value between the anode and the substrate in the air or in the electroplating bath to determine the different positions of the construction support column The distance from the surface. The coplanar alignment of the anode array 201 with respect to the substrate is also extremely important. To ensure alignment, multiple sensors 223 can be used to analyze the gaps between the anode and cathode 220, for example, capacitive sensors or laser sensors. With reference to these gap measurements, the anode array 201 or the substrate (or both) can be moved to align the respective planes. The standard substrate size is a 300 mm wafer. If the feature to be manufactured is a column with a diameter of 30 μm and a height of less than 100 μm, the pre-deposition alignment may require the gap measurement value and the alignment accuracy to be less than about one micron.

According to the embodiment of the present invention, when the material is deposited on the crystal plate 1601, the anode array 201 and the crystal plate 1601 can be placed in appropriate starting positions through the initial zeroing procedure. For example, in one or more embodiments, the zeroing can use a position sensor to sense the gap between the anode and the cathode 220. Then the mechanical positioning system is activated to move the anode array 201 closer to the cathode 220; when the position sensor starts to sense that the displacement is less than the instruction distance, the system determines that the wafer 1601 and the anode array 201 have begun to contact each other. This measurement can also be achieved through optical methods, such as using lasers, magnetic or electrical sensors. The coplanarity of the anode array 201 and the cathode 220 also has an absolute influence on the quality and consistency of the deposition. A similar zero-return technique can be implemented at multiple positions on the cathode plane, with the adjustment of the anode holder, the cathode holder, or both to ensure coplanarity.

The mechanical positioning system can move the anode array 201, the crystal plate 1601, or both. In the illustrated device of FIG. 18, the actuator 224a can move the anode array 201, and the actuator 224b can move the wafer 1601. For example, the actuator 224b can affect the positioning of the clamps 1801a/1802a and 1801b/1802b to adjust the position or direction of the wafer 1601. The embodiment of the present invention may use only one of the actuators 224a and 224b; other embodiments may have both. The movement of the anode array 201 can have a maximum of six degrees of freedom 225a, so that the anode array 201 can be placed in any desired position and direction. In the same way, the movement of the crystal plate 1601 can also have the maximum six degrees of freedom 225b, so that the crystal plate 1601 can be placed in any desired position and direction. The actuators 224a and 224b can be controlled by the processor 222. The sensor 223 data obtained by the processor 222 can display the relative position and direction of the anode array 201 and the wafer 1601, and can control the actuators 224a and 224b to Set the relative position and direction to the desired value.

In one or more embodiments, the crystal plate 1601 may have a horizontal extension that exceeds the size of the anode array 201. Under these conditions, the anode array 201 can move horizontally relative to the wafer 1601 to successfully construct interconnection structures in different sub-regions of the wafer 1601. For example, in FIG. 18, the horizontal shift 1810 of the anode array 201 can be performed after the feature of the wafer block 1602 is constructed on the right side of the wafer 1601.

One or more embodiments may also include a fluid system to manage the flow and state of the electrolyte solution 210. For example, in FIG. 18, the fluid system draws fluid 1803 from the right side across the gap between the anode array 201 and the wafer 1601, and the fluid flows out at a position 1804 for recirculation. The fluid system can have, for example, any or all of the following: pumps, filters, temperature control systems (thermometers, heaters, coolers), pipelines, such as pH and ion concentration sensors (conductivity, spectrophotometer, Analysis equipment such as mass spectrometer, inductively coupled plasma mass spectrometry, etc., leaching system used to absorb unfavorable by-products, and supplementary system used to add consumable components in the electrolyte tank. All system components can be designed to withstand corrosive electrodeposition environments. The action of liquid flow or system components can also be used to prevent or reduce the generation of bubbles 1403 during electrodeposition. The bubble 1403 cleaning cycle can be started regularly, or executed when the deposition efficiency is measured to be reduced. For example, the measured current of all or individual anodes is reduced, which means that there is a lack of conduction path or the bubble 1403 isolates the anode. The embodiment of the present invention can use the ultrasonic effect of the fluid to wash away the bubbles 1403, providing a pulsed liquid flow instead of a constant flow rate. For example, the ultrasonic transducer can be contacted with any combination of fluid, anode and cathode 220; it can easily inject ultrasonic energy, so that bubbles 1403 in the solution are released from the substrate and broken into smaller bubbles. This two-state This helps to encourage bubbles 1403 to leave the current build area with the flowing solution. One or more embodiments may also include shaking the entire assembly to remove air bubbles 1403.

The liquid flow shown in FIG. 18 from the fluid 1803 to the position 1804 is parallel to the plane of the wafer 1601 and the anode array 201. In the embodiment of the present invention, the liquid flow can be perpendicular to these planes, for example, through the fluid supply holes in the anode array 201 and/or the cathode 220; this vertical liquid flow is more effective in some cases and can improve air bubbles 1403 Remove. Embodiments of the present invention may include features such as ridges on the surface of the anode array 201 that are aligned with the liquid flow to improve liquid flow and remove bubbles 1403.

In some embodiments, multiple materials can be deposited on the wafer 1601. For example, one material can be deposited on top of a column of another material to extend the column. One example can be copper depositing solder (such as tin or tin alloy). When the common components cannot be used for different materials due to material incompatibility, the deposition of different materials can be achieved by moving the substrate to different machines equipped with different materials, or using parallel fluid processing with independent components for each type of material System to achieve the above purpose. For example, each material can be loaded into an independent trough, with independent temperature control, filtration, pH management, and so on. In addition, a fluid flushing system can be used to flush common components (building chambers, electrode arrays), and flushing when replacing materials. This system can be, for example, a clean water supply, which flows into a sump or drain pipe after flushing the system. In some embodiments, multiple building cabins may be used, for example, the crystal plate 1601 is moved between the building cabins.

The control system including the processor 222 can collect the sensor 223 information, and implement the structure deposition according to the construction plan 103 input in advance before deposition. The control system can receive data from the electrolyte tank monitoring equipment, mechanical positioning sensors and electroplating power system. For example, voltage and current can be measured at the system level (monolithic) and/or at each individual anode, or at certain anode groups.

The collected information can be used in automated construction quality determination procedures. For example, this information can be used to determine whether a feature is broken or not correctly formed during the construction process, and to report manufacturing output, thereby omitting subsequent inspection steps.

In a standard deposition cycle, the control system can set the current and/or voltage of each anode element according to the construction plan 103, position the anode array 201 relative to the wafer 1601, activate the pump to drive the liquid flow, and perform the overall operation of the individual anode system. Layer measurement current, voltage and deposition time. When a specific threshold is met, such as the calculated charge (anode current that varies with time), or current/voltage spikes indicating a short circuit, the system can deactivate the specific anode and/or move the anode array 201 relative to the crystal plate 1601 to continue program. At a specific location in the construction process, a mechanical system can be used to deliberately increase the gap to increase the fluid velocity, for example, to clear the generated bubbles and/or refresh the electrolyte inactivation construction area.

In another embodiment, an anode may be added to make fluid contact with the electroplatable tank for subsequent deposition of the tank material on the anode array 201. In this way, the surface of the anode array 201 can become soluble from the insoluble electrode material, and can help reduce secondary gas formation, reduce unfavorable secondary reactions, and/or extend the life of the anode itself.

Under certain conditions, if the wafer 1601 stays in the electrolyte solution 210, the electroplating solution may slowly erode the deposits, causing damage to the deposits. In order to offset the above effects, in one or more embodiments, any technique can be used to maintain the potential on the cathode 220 to avoid material loss. The first technique can use a sacrificial zinc anode that is electrically connected to the cathode and placed in the tank. Zinc is easier to dissolve into the solution than copper deposits, so it can protect deposits. This electrode can be used with auxiliary tank and salt bridge/ion membrane to avoid zinc ion contamination of the liquid tank. Another technique can use active cathode 220 current protection to maintain the potential of the cathode 220 slightly lower than that of the anode and the electrolyte to ensure a constant but very small forward current always acts on the cathode 220.

Exemplary materials locked for deposition are In, Cu, Sn, Ni, Co, Ag, Au, Pb, and alloys of the foregoing materials, such as SnAg, NiCo. Additives can be used in electrolyte chemicals to improve the deposition quality, such as surface texture, density, residual stress, and so on. For example, in one or more embodiments, additives with inhibitory effects may be added to the electrolyte. The effect of these additives is to slow down or stop the deposition of the lower current density area on the cathode 220, and their advantage is that they can produce a more defined edge of the deposit substrate. Without inhibitory additives, there may be a diffused edge at each deposited substrate.

Although this procedure can eliminate the mask processing on the wafer, in one or more embodiments, the mask can also be used to help improve the resolution and the initial formation of the structure.

One or more embodiments may deposit interconnect features on the conductive seed layer 1601a disposed on the wafer 1601. An exemplary procedure for using the seed layer 1601a is shown in FIG. 19. In step 1901, the initial conductive seed layer 1601a is disposed on the crystal plate 1601. This step 1901 can be performed using physical vapor deposition ("PVD"), for example. In the embodiment of the present invention, the initial seed layer 1601a can be thinner than the generally deposited seed layer in wafer electroplating applications. Then in step 1902, electrochemical deposition can be used to thicken the layer body. Specifically, the crystal plate 1601 and the seed layer 1601a are placed in the electrolyte solution 210, and the material is plated on the entire seed layer 1601a to thicken it. , Resulting in a thickened conductive seed layer 1601b. The advantage of initially using a thinner seed layer 1601a and then thickening by electrodeposition is that it can reduce the use of PVD tools when the seed layer is deposited, improve the control of the thickness of the seed layer, and can change the seed layer at different locations on the substrate. Thickness can achieve a thicker seed layer than the PVD process and build a multi-material seed layer. Subsequent step 1903 deposits interconnect features, such as bumps 1603, on the thickened conductive seed layer 1601b, as described above. Finally, step 1904 removes the seed layer 1601b between the interconnection structures to electrically isolate the individual interconnections.

Figures 20A, 20B, and 20C illustrate the advantages of using electrodeposition to construct interconnect structures over existing techniques. FIG. 20A shows an exemplary wafer bump 1603 or pillar, such as pillar 1603a, which can be constructed using electrodeposition or existing techniques, such as a photoresist process. Three important dimensions include column diameter 2001, column height 2002 and column interval 2003 (between centers). In terms of the latest technology processing using photoresist, the column diameter 2001 is about 50 µm, the column height 2002 is about 50 µm to 100 µm, and the column spacing 2003 is about 100 µm. FIG. 20B shows an exemplary size that can be achieved by depositing an interconnect structure such as a pillar 1603b using an embodiment of the present invention: the pillar diameter 2011 can be less than 10 µm, and the pillar height 2012 can be 200 µm or more at a diameter of 10 µm. And the column spacing 2013 can be as small as 10 µm to 20 µm. These numerical values show a significant improvement to the existing technology, and can be made into taller, thinner, and smaller-spaced cylinders. The aspect ratio (height to diameter) of the column achievable by using one or more embodiments of the present invention is greater than 10:1, which is the limit of the thickness of the photoresist process photoresist in application and contact and cannot be achieved.

FIG. 20C shows another exemplary advantage of the embodiment of the present invention: the interconnection structure may include a shape with diagonal, inclined or horizontal segments. The wafer bumps 1603 commonly used in this art are vertically raised from the surface of the semiconductor die. These vertical structures allow the die pad to directly connect to the connection point across the corresponding die pad position. However, in some cases it may be necessary to make non-vertical interconnect features. Due to the flexibility of the electrochemical build-up process, the die pad connection structure is not limited to simple vertical pillars. In some embodiments, horizontal structures can be fabricated to connect discrete signals for reasons including customized chips based on the same die, discrete signal interconnection that is not suitable for on-die interconnection, and so on. For example, these techniques can be used to bring the die signal out to the edge of the package for connection. In some embodiments, one or more pillars may be inclined rather than perpendicular to the surface of the die. For example, part or all of the pillars can be inclined in the same direction, so that the crystal grains deviate from the connection point horizontally. In some embodiments, the inclination direction of some pillars can be opposite (expanded) to other pillars to create more scattered connection points than the spacers on the die. In the illustrative example shown in FIG. 20C, the vertical segment 2021 of the pillar 1603c is connected to a substantially horizontal segment 2020; this shape moves the connection point to the edge of the wafer. The non-vertical shape is also a suitable heat sink structure, which can be constructed on the wafer with or in place of the interconnect structure. In some embodiments, the heat sink can be deposited on one or both sides of the integrated circuit die by electrodeposition, together with the interconnect structure, or independently.

FIG. 21 shows an exemplary technique that can be used in one or more embodiments to construct horizontal (or inclined, non-vertical) interconnection features or heat sink feature sections, such as the one shown in FIG. 20C. First, in step 2101, the vertical segments 2021 of features are deposited on the wafer 1601, such as segments 2110a and 2111a, the wafer 1601 may have a conductive seed layer 1601a. Then, the anodes selected in step 2103 can be sequentially activated to deposit and build horizontal sections 2110b and 2111b parallel to the anode array 201. This procedure is as described above with reference to FIG. 6. In certain embodiments, the active anode is activated until a current short circuit is found. At this time, the current active anode is disabled, and subsequent anodes are activated to continue construction.

The construction of a horizontal structure can introduce an overhanging effect, especially for a slender structure. When manufacturing such a three-dimensional interconnect structure, various techniques can be used to improve the overhang effect, for example, to reduce the stress on the overhang structure. Performing deposition in a microgravity environment is also a way to avoid stress due to gravity. Other techniques can also be used.

In some embodiments, in order to reduce the overhang stress, a multi-material construction may be performed, with or without material removal between steps. For example, in one or more embodiments, the process can build support columns, supporting troughs at the top of the support columns (filled with inert materials such as epoxy or the like 2112), and then build horizontal structures and more support columns and troughs , Build right-angle horizontal structures and so on. This technique is shown in step 2102 of FIG. 21, in which the inert material 2112 is deposited around the sections 2110a and 2111a of the straight column. This inert material 2112 can provide support for the horizontal structure sections 2110b and 2111b constructed in step 2103.

Although the present invention is illustrated by specific embodiments and applications, those skilled in the art should be able to implement various modifications and changes without departing from the scope of the present invention as defined by the following claims.

100: Planning stage 1001: Corrosion calculation 1002: Map 1003: Operation 1004: Map 1006: map 1007: output 101: Model 1011: anode current 101a: model 1012: anode voltage 1013: anode duty cycle 102: Planning steps 103: Construction Plan 1101: anode 1102: anode 1103: anode 111: layer description 1111: deposition 1112: deposition pattern 112: Target Map 1121: boundary 1122: boundary 112a: target map 112b: target map 112c: target map 112d: target map 112e: target map 113: Program Parameters 1130: pattern 113a: Program parameters 113b: Program parameters 113c: program parameters 113d: Program parameters 1140: Point spread function 1141: Convolution 115: program parameters 1150: shape 120: Construction phase 1201: Target Map 121: Step 1210: Conversion 1211: pattern 1212: Numerical value 1213: anode 1214: anode 122: Step 123: Steps 1230: pattern 1231: anode 1232: anode 124: Control signal 125: step 126: Step 127: Step 128: Sedimentation analysis 129: Judgment 130: Judgment 1301: area 131: Program parameters 1310: ion 1311: sub-area 1312: sub-area 132: test 1331: current 1332: current 140: loop 1401: anode 1402: Film 1403: Bubble 1410: auxiliary anode 1411: switch 1412: switch 1413: material 1420: flow 1421: Vibration 1501: parts 1601: crystal board 1601a: seed layer 1601b: seed layer 1602: wafer block 1603: bump 1603a: cylinder 1603b: cylinder 1603c: cylinder 1611: crystal board 1612: wafer block 1613: circuit 1614: connection point 1701: Step 1702: Step 1703: step 1704: step 1705: step 1801a: clamp 1801b: clamp 1802a: clamp 1802b: clamp 1803: fluid 1804: location 1810: Horizontal shift 1901: steps 1902: steps 200: print head 2001: cylinder diameter 2002: column height 2003: Cylinder spacing 201: Anode Array 2011: cylinder diameter 2012: column height 2013: column interval 202: control circuit 2020: horizontal paragraphs 2021: vertical paragraph 203: Grid Control Circuit 204: Power Distribution Circuit 210: Electrolyte solution 2101: Step 2102: step 2103: step 211: Anode 2110a: Paragraph 2110b: Paragraph 2111a: Paragraph 2111b: Paragraph 2112: inert materials 212: Anode 220: cathode 2201: anode 2202: anode 2203: anode 2204: Conductor 2205: opening 2206: opening 221: power supply 2211: anode 2212: anode 2213: anode 2214: resistor 2215: resistor 2216: resistor 222: processor 2221: anode 2222: anode 2223: anode 2224: switch 2225: switch 2226: switch 223: Sensor 223a: Current sensor 224: Position Actuator 224a: Actuator 224b: Actuator 225: Vertical movement 225a: Maximum six degrees of freedom 230: parts 230a: Parts 301: program parameters 302: program parameters 303: Program Parameters 401: Density 402: Target Map 403: basal layer 404: Extra layer body 405: Parts 501: Difference Operation 502: Change data comparison map 503: area 504: Judgment 601b: Partial 601c: area 610: Support Column 611: Material 613: Material 614: structure 621: Subset 622: Subset 623: Subset 701: anode 702: anode 703: anode 704: Anode 705: anode 706: anode 710: Current 711: current 713: current 714: current 801: Map 802: Threshold Operation 900: target map 901: Operation 902: calculation 911: Map 912: Target Map 912a: island 912b: island 912c: island 912d: island 913: Number of pixels 920: Operation 921: Map 922: Number of pixels 923: ratio 923a: Percent complete 923b: Percent complete 923c: Percent complete 923d: Percent complete

The above and other aspects, features and advantages of the present invention will be illustrated by the following detailed description with the following drawings: FIG. 1 is a flowchart of an embodiment of the present invention, which uses feedback control to evaluate the completion of the layer body and adjust the parameters during the manufacturing process to sequentially manufacture multiple layer bodies. FIG. 2 shows a block diagram of an exemplary electrodeposition apparatus that can be used to implement one or more embodiments of the present invention. Fig. 3 shows a layered example construction plan of an object, in which the target area of each layer is indicated by the desired material deposition area and the process parameters describing the method of manufacturing the layer. Figure 4 shows how to use density control to create a porous base layer that facilitates subsequent removal. Figure 5 shows the detection of the overhanging part of the layer body. FIG. 6 shows the manufacturing steps of the overhang shown in FIG. 5. FIG. Fig. 7 shows an exemplary embodiment of feedback obtained by a current sensor on the anode array. FIG. 8 shows an example of the feedback signals from the current map sensor, and the situation where these signals are processed to form a map of the deposition area in the layer. FIG. 9A shows an example method for testing the layer body based on the current sensor data of FIG. 8. Fig. 9B is an extension of the completion test of the layer body of Fig. 9A, which respectively tests the completion of all connected components in the layer body. FIG. 10 shows the anode output update based on the feedback signal of the current sensor of FIG. 8. FIG. 11A, 11B, and 11C illustrate the possible complicated relationship between anode current and deposition material, and pretreatment may be required to obtain the desired deposition pattern. FIG. 12A shows the process of obtaining the desired deposition pattern through anode current calculation. The two-dimensional example of FIG. 12B illustrates the process of calculating the anode current pattern to obtain the desired deposition pattern. Figure 13 shows an exemplary embodiment of alternate anode output in different areas. Figure 14 shows exemplary maintenance actions that can be performed on the anode array or electrolyte during the manufacture of the layered body. Figure 15 shows an exemplary component manufactured using an embodiment of the present invention. FIG. 16 shows an exemplary application of an embodiment of the present invention, which uses electrochemical build-up manufacturing to deposit and form wafer bumps on a wafer. FIG. 17 shows an exemplary flow chart of a method of adding wafer bumps or similar features on a wafer using electrochemical build-up manufacturing. Figure 18 shows an exemplary device that can be used to implement the method shown in Figure 17. FIG. 19 shows an exemplary procedure for adding interconnect features on a wafer, which is to remove the seed layer after the features are created on top of the seed layer. FIG. 20A is an exemplary outline view of a wafer bump. FIG. 20B shows the enhanced encryption feature that can be added by the embodiment of the present invention. Figure 20C shows exemplary features of horizontal paragraphs that can be generated using embodiments of the present invention. Figure 21 shows exemplary steps that can be used in one or more embodiments to construct the horizontal features shown in Figure 20C. 22A, 22B, and 22C illustrate different types of electrode configurations that can be used in one or more embodiments Figure 22A shows independent electrodes that are not independently controlled. Figure 22B shows a non-independent electrode that is not independently controlled. Figure 22C shows an independent electrode controlled independently.

100: Planning stage

101: Model

102: Planning steps

103: Construction Plan

111: layer description

112: Target Map

113: Program Parameters

115: program parameters

121: Step

122: Step

123: Steps

124: Control signal

125: step

126: Step

127: Step

128: Sedimentation analysis

129: Judgment

130: Judgment

131: Program parameters

132: test

140: loop

Claims (23)

An electrochemical layered manufacturing method for manufacturing interconnection features, which includes: Obtain a wafer board including one or more wafer blocks, each of the one or more wafer blocks includes one or more connection points, wherein the wafer board further includes a conductive seed layer; Electrically coupling the conductive seed layer to a power supply; Contacting one surface of the conductive seed layer with an electrolyte solution; An anode array is brought into contact with the electrolyte solution, wherein The anode array includes a plurality of deposition anodes; and Each deposition anode of the plurality of deposition anodes is configured to independently provide a current, and the current flows from the power supply through the electrolyte solution to the crystal plate through the deposition anode, Deposition of materials produced on the board; Aligning the crystal plate with the anode array; and Manufacturing one or more interconnection features, each electrically coupled to a corresponding connection point among the one or more connection points on each wafer block, wherein the step of manufacturing the one or more interconnection features Include The amount of the current flowing from each deposition anode is controlled to deposit the material on the wafer to form the one or more interconnect features. The method of claim 1, wherein the one or more interconnect features include one or more wafer bumps. The method of claim 1, wherein the one or more interconnection features include one or more pillars. The method according to claim 1, wherein the step of aligning the crystal plate with the anode array comprises Using one or more sensors to determine a three-dimensional position and a three-dimensional direction of the crystal plate relative to the anode array; and One or more actuators are used to set or modify the three-dimensional position and the three-dimensional direction of the crystal plate relative to the anode array. The method described in claim 1, which also includes Remove the portion covered by the one or more interconnected features. The method described in claim 1, which also includes The amount of the current flowing from each deposition anode is controlled to increase the thickness of one of the conductive seed layers in one or more regions of the crystal plate. The method of claim 1, wherein one or more of the one or more interconnection features includes a portion that is not substantially perpendicular to the wafer. The method described in claim 7, which also includes The horizontally offset anodes of the plurality of deposition anodes are sequentially activated to construct the part substantially perpendicular to the crystal plate. The method described in claim 8, which also includes Constructing vertical portions of the one or more of the one or more interconnection features, the vertical portions being substantially perpendicular to the wafer; Depositing an inert material on the wafer between the vertical portions; and The horizontal offset anode is activated after depositing the inert material. The method described in claim 1, wherein The material includes a first material and a second material; and The step of depositing the material on the wafer to form the one or more interconnect features includes Depositing the first material on the crystal plate; and The second material is deposited on top of the first material. The method according to claim 10, wherein: The first material includes copper; and The second material includes one or more of tin, silver, and lead. The method according to claim 1, wherein: The wafer includes two or more wafer blocks; and The step of manufacturing the one or more interconnect features further includes One or more actuators are used to position the anode array closest to each of the two or more wafers to produce interconnect features associated with each of the wafers. The method of claim 1, wherein the step of manufacturing the one or more interconnection features comprises Obtain a construction plan that includes a layer description of each of the plurality of layers of the one or more interconnected features, wherein the layer description includes A target map, which contains the desired existence or non-existence of a plurality of positions of the material in an associated layer; and One or more program parameter values, which affect a process of the associated layer; Manufacturing each of the plurality of layer bodies, wherein the step of manufacturing one of the plurality of layer bodies includes Setting or confirming a position of the crystal plate relative to the anode array to start the manufacture of the layer body; Based on the layer description of the layer body, transmit a control signal to the anode array; Measuring one or more feedback signals on the anode array; Analyzing the one or more feedback signals to generate a deposition analysis, the deposition analysis including the degree of deposition progress at the plurality of locations in the layer; Based on the deposition analysis, determine whether the deposition of the layer body is completed; When the deposition of the layer is not completed, Determine whether to modify one or more program parameter values associated with the layer among the one or more program parameter values; and When the deposition of the layer body is completed and when one of the subsequent layer bodies of the plurality of layer bodies has not been manufactured, the subsequent layer body is manufactured. The method according to claim 13, wherein the one or more feedback signals include a map of the current on the anode array. The method according to claim 13, wherein the step of manufacturing one of the plurality of layer bodies further comprises Calculate the desired current output map from each deposition anode in the anode array, and the current will generate a deposition corresponding to the target map associated with the layer. The method of claim 15, wherein the step of calculating the desired current output map from each deposition anode includes applying one or more transformations to the target map associated with the layer. The method according to claim 13, wherein the step of manufacturing the layer body of the plurality of layer bodies further comprises Perform one or more maintenance actions to maintain the condition of one or more of the anode array and the electrolyte solution. The method of claim 17, wherein the one or more maintenance actions include returning the material to the one or more corroded deposition anodes. The method according to claim 17, wherein the one or more maintenance actions include activating one or more deposition anodes on which a thin film has been formed to remove the thin film. The method of claim 17, wherein the one or more maintenance actions include removing bubbles in the electrolyte solution. An interconnected characteristic electrochemical layered manufacturing system, which includes: A reaction chamber, configured to contain an ionic solution that can be deposited by electrolysis; An anode array arranged in the reaction chamber and configured to be immersed in the ionic solution; A substrate arranged in the reaction chamber; A conductive seed layer disposed on a surface of the substrate and configured to contact the ionic solution; A mechanical positioning system configured to modify one or more of one or more of the position and orientation of the anode array and the substrate; and A microcontroller, which is programmed as Send a control signal to the mechanical positioning system to modify the relative position and direction of the anode array and the substrate, so that The anode array and the substrate are substantially coplanar; and The anode array is aligned with one or more features of the substrate; Accept a three-dimensional model of interconnection features to be added to the substrate; Based on the three-dimensional model of the interconnection feature, the current passing through each anode in the anode array is controlled to construct the interconnection feature on the substrate. The system according to claim 21 further includes one or more additional devices configured to provide an electrical connection to the conductive seed layer. The system according to claim 21, wherein: The substrate includes two or more wafer blocks; and The microcontroller is more programmed as Transmitting a first set of control signals to the mechanical positioning system to align the anode array with a first die block of the two or more die blocks; Controlling the current through each anode in the anode array to construct the interconnection feature on the first wafer block; Transmitting a second set of control signals to the mechanical positioning system to align the anode array with the second chip block of one of the two or more chip blocks; and The current through each anode in the anode array is controlled to construct the interconnection feature on the second wafer block.

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