TW202244135A - Composition for forming film, laminate obtained by applying the composition for forming film, fingerprint authentication sensor including the laminate, and method for forming cured film - Google Patents
Composition for forming film, laminate obtained by applying the composition for forming film, fingerprint authentication sensor including the laminate, and method for forming cured film Download PDFInfo
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- TW202244135A TW202244135A TW111107559A TW111107559A TW202244135A TW 202244135 A TW202244135 A TW 202244135A TW 111107559 A TW111107559 A TW 111107559A TW 111107559 A TW111107559 A TW 111107559A TW 202244135 A TW202244135 A TW 202244135A
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- Prior art keywords
- silane
- film
- based compound
- mentioned
- compound
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- 239000000203 mixture Substances 0.000 title claims abstract description 65
- 238000000034 method Methods 0.000 title claims description 18
- 229910000077 silane Inorganic materials 0.000 claims abstract description 142
- 150000001875 compounds Chemical class 0.000 claims abstract description 109
- -1 silane compound Chemical class 0.000 claims abstract description 86
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims abstract description 83
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 claims abstract description 56
- 229920000642 polymer Polymers 0.000 claims abstract description 51
- 239000000178 monomer Substances 0.000 claims abstract description 23
- 239000003960 organic solvent Substances 0.000 claims abstract description 18
- 239000000470 constituent Substances 0.000 claims abstract description 16
- 239000003505 polymerization initiator Substances 0.000 claims abstract description 15
- 125000003700 epoxy group Chemical group 0.000 claims abstract description 9
- 150000007942 carboxylates Chemical group 0.000 claims abstract description 8
- 125000000962 organic group Chemical group 0.000 claims abstract description 8
- 150000001735 carboxylic acids Chemical group 0.000 claims abstract 2
- 239000000758 substrate Substances 0.000 claims description 18
- 238000000576 coating method Methods 0.000 claims description 17
- 239000011248 coating agent Substances 0.000 claims description 16
- 150000004756 silanes Chemical class 0.000 claims description 11
- 239000004848 polyfunctional curative Substances 0.000 claims description 8
- 150000001335 aliphatic alkanes Chemical class 0.000 claims description 5
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 125000005369 trialkoxysilyl group Chemical group 0.000 claims description 2
- 239000003054 catalyst Substances 0.000 abstract description 15
- 239000003795 chemical substances by application Substances 0.000 abstract description 9
- 150000003254 radicals Chemical class 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 79
- 238000012360 testing method Methods 0.000 description 37
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 31
- 238000001723 curing Methods 0.000 description 20
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 18
- 239000000463 material Substances 0.000 description 15
- 239000000243 solution Substances 0.000 description 14
- 239000000126 substance Substances 0.000 description 11
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 10
- 238000005259 measurement Methods 0.000 description 10
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 10
- 150000001732 carboxylic acid derivatives Chemical group 0.000 description 9
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 9
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 6
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 239000007864 aqueous solution Substances 0.000 description 6
- 238000011156 evaluation Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- YKYONYBAUNKHLG-UHFFFAOYSA-N propyl acetate Chemical compound CCCOC(C)=O YKYONYBAUNKHLG-UHFFFAOYSA-N 0.000 description 6
- MUTGBJKUEZFXGO-OLQVQODUSA-N (3as,7ar)-3a,4,5,6,7,7a-hexahydro-2-benzofuran-1,3-dione Chemical compound C1CCC[C@@H]2C(=O)OC(=O)[C@@H]21 MUTGBJKUEZFXGO-OLQVQODUSA-N 0.000 description 5
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 5
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 5
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 5
- 150000001298 alcohols Chemical class 0.000 description 5
- ZZHNUBIHHLQNHX-UHFFFAOYSA-N butoxysilane Chemical compound CCCCO[SiH3] ZZHNUBIHHLQNHX-UHFFFAOYSA-N 0.000 description 5
- 239000003431 cross linking reagent Substances 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- 239000002685 polymerization catalyst Substances 0.000 description 5
- 229920005573 silicon-containing polymer Polymers 0.000 description 5
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 150000002148 esters Chemical group 0.000 description 4
- XLLIQLLCWZCATF-UHFFFAOYSA-N ethylene glycol monomethyl ether acetate Natural products COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 229920005862 polyol Polymers 0.000 description 4
- 150000003077 polyols Chemical class 0.000 description 4
- 229920001296 polysiloxane Polymers 0.000 description 4
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 4
- 238000002791 soaking Methods 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- DQZNLOXENNXVAD-UHFFFAOYSA-N trimethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](OC)(OC)OC)CCC2OC21 DQZNLOXENNXVAD-UHFFFAOYSA-N 0.000 description 4
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 4
- PUPZLCDOIYMWBV-UHFFFAOYSA-N (1R)-1,3-butanediol Natural products CC(O)CCO PUPZLCDOIYMWBV-UHFFFAOYSA-N 0.000 description 3
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 3
- BPXVHIRIPLPOPT-UHFFFAOYSA-N 1,3,5-tris(2-hydroxyethyl)-1,3,5-triazinane-2,4,6-trione Chemical compound OCCN1C(=O)N(CCO)C(=O)N(CCO)C1=O BPXVHIRIPLPOPT-UHFFFAOYSA-N 0.000 description 3
- FALRKNHUBBKYCC-UHFFFAOYSA-N 2-(chloromethyl)pyridine-3-carbonitrile Chemical compound ClCC1=NC=CC=C1C#N FALRKNHUBBKYCC-UHFFFAOYSA-N 0.000 description 3
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- MPIAGWXWVAHQBB-UHFFFAOYSA-N [3-prop-2-enoyloxy-2-[[3-prop-2-enoyloxy-2,2-bis(prop-2-enoyloxymethyl)propoxy]methyl]-2-(prop-2-enoyloxymethyl)propyl] prop-2-enoate Chemical compound C=CC(=O)OCC(COC(=O)C=C)(COC(=O)C=C)COCC(COC(=O)C=C)(COC(=O)C=C)COC(=O)C=C MPIAGWXWVAHQBB-UHFFFAOYSA-N 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 239000005380 borophosphosilicate glass Substances 0.000 description 3
- 239000007859 condensation product Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000003999 initiator Substances 0.000 description 3
- 150000002576 ketones Chemical class 0.000 description 3
- NWVVVBRKAWDGAB-UHFFFAOYSA-N p-methoxyphenol Chemical compound COC1=CC=C(O)C=C1 NWVVVBRKAWDGAB-UHFFFAOYSA-N 0.000 description 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 229940014800 succinic anhydride Drugs 0.000 description 3
- 239000004094 surface-active agent Chemical group 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 3
- JCVQKRGIASEUKR-UHFFFAOYSA-N triethoxy(phenyl)silane Chemical compound CCO[Si](OCC)(OCC)C1=CC=CC=C1 JCVQKRGIASEUKR-UHFFFAOYSA-N 0.000 description 3
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 description 3
- LTVUCOSIZFEASK-MPXCPUAZSA-N (3ar,4s,7r,7as)-3a-methyl-3a,4,7,7a-tetrahydro-4,7-methano-2-benzofuran-1,3-dione Chemical compound C([C@H]1C=C2)[C@H]2[C@H]2[C@]1(C)C(=O)OC2=O LTVUCOSIZFEASK-MPXCPUAZSA-N 0.000 description 2
- KMOUUZVZFBCRAM-OLQVQODUSA-N (3as,7ar)-3a,4,7,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1C=CC[C@@H]2C(=O)OC(=O)[C@@H]21 KMOUUZVZFBCRAM-OLQVQODUSA-N 0.000 description 2
- MWGRRMQNSQNFID-UHFFFAOYSA-N 1-(2-methylpropoxy)propan-2-ol Chemical compound CC(C)COCC(C)O MWGRRMQNSQNFID-UHFFFAOYSA-N 0.000 description 2
- JOLQKTGDSGKSKJ-UHFFFAOYSA-N 1-ethoxypropan-2-ol Chemical compound CCOCC(C)O JOLQKTGDSGKSKJ-UHFFFAOYSA-N 0.000 description 2
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 2
- FENFUOGYJVOCRY-UHFFFAOYSA-N 1-propoxypropan-2-ol Chemical compound CCCOCC(C)O FENFUOGYJVOCRY-UHFFFAOYSA-N 0.000 description 2
- UWNADWZGEHDQAB-UHFFFAOYSA-N 2,5-dimethylhexane Chemical group CC(C)CCC(C)C UWNADWZGEHDQAB-UHFFFAOYSA-N 0.000 description 2
- QQZOPKMRPOGIEB-UHFFFAOYSA-N 2-Oxohexane Chemical compound CCCCC(C)=O QQZOPKMRPOGIEB-UHFFFAOYSA-N 0.000 description 2
- WMYINDVYGQKYMI-UHFFFAOYSA-N 2-[2,2-bis(hydroxymethyl)butoxymethyl]-2-ethylpropane-1,3-diol Chemical compound CCC(CO)(CO)COCC(CC)(CO)CO WMYINDVYGQKYMI-UHFFFAOYSA-N 0.000 description 2
- SZNYYWIUQFZLLT-UHFFFAOYSA-N 2-methyl-1-(2-methylpropoxy)propane Chemical compound CC(C)COCC(C)C SZNYYWIUQFZLLT-UHFFFAOYSA-N 0.000 description 2
- SYBYTAAJFKOIEJ-UHFFFAOYSA-N 3-Methylbutan-2-one Chemical compound CC(C)C(C)=O SYBYTAAJFKOIEJ-UHFFFAOYSA-N 0.000 description 2
- NTKBNCABAMQDIG-UHFFFAOYSA-N 3-butoxypropan-1-ol Chemical compound CCCCOCCCO NTKBNCABAMQDIG-UHFFFAOYSA-N 0.000 description 2
- GBSGXZBOFKJGMG-UHFFFAOYSA-N 3-propan-2-yloxypropan-1-ol Chemical compound CC(C)OCCCO GBSGXZBOFKJGMG-UHFFFAOYSA-N 0.000 description 2
- VVBLNCFGVYUYGU-UHFFFAOYSA-N 4,4'-Bis(dimethylamino)benzophenone Chemical compound C1=CC(N(C)C)=CC=C1C(=O)C1=CC=C(N(C)C)C=C1 VVBLNCFGVYUYGU-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- YRDJQVPYMFJMCE-UHFFFAOYSA-N C1(CCCC1)[Si](OC(C)CC)(OC(C)CC)OC(C)CC Chemical compound C1(CCCC1)[Si](OC(C)CC)(OC(C)CC)OC(C)CC YRDJQVPYMFJMCE-UHFFFAOYSA-N 0.000 description 2
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 2
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- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
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- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
- 150000008065 acid anhydrides Chemical class 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- ISAOCJYIOMOJEB-UHFFFAOYSA-N benzoin Chemical compound C=1C=CC=CC=1C(O)C(=O)C1=CC=CC=C1 ISAOCJYIOMOJEB-UHFFFAOYSA-N 0.000 description 2
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 2
- 239000012965 benzophenone Substances 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- 235000019437 butane-1,3-diol Nutrition 0.000 description 2
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- 239000012043 crude product Substances 0.000 description 2
- ATGKAFZFOALBOF-UHFFFAOYSA-N cyclohexyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C1CCCCC1 ATGKAFZFOALBOF-UHFFFAOYSA-N 0.000 description 2
- PAFZNILMFXTMIY-UHFFFAOYSA-N cyclohexylamine Chemical compound NC1CCCCC1 PAFZNILMFXTMIY-UHFFFAOYSA-N 0.000 description 2
- NTABREFATMHOMD-UHFFFAOYSA-N di(butan-2-yloxy)-di(propan-2-yl)silane Chemical compound CCC(C)O[Si](C(C)C)(C(C)C)OC(C)CC NTABREFATMHOMD-UHFFFAOYSA-N 0.000 description 2
- BRUBSFJFECVMDK-UHFFFAOYSA-N di(butan-2-yloxy)-dibutylsilane Chemical compound CCCC[Si](CCCC)(OC(C)CC)OC(C)CC BRUBSFJFECVMDK-UHFFFAOYSA-N 0.000 description 2
- UMFDNQISZRRQHX-UHFFFAOYSA-N di(butan-2-yloxy)-diethylsilane Chemical compound CCC(C)O[Si](CC)(CC)OC(C)CC UMFDNQISZRRQHX-UHFFFAOYSA-N 0.000 description 2
- JJQZDUKDJDQPMQ-UHFFFAOYSA-N dimethoxy(dimethyl)silane Chemical compound CO[Si](C)(C)OC JJQZDUKDJDQPMQ-UHFFFAOYSA-N 0.000 description 2
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- 238000001035 drying Methods 0.000 description 2
- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 description 2
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 2
- FKRCODPIKNYEAC-UHFFFAOYSA-N ethyl propionate Chemical compound CCOC(=O)CC FKRCODPIKNYEAC-UHFFFAOYSA-N 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
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- 150000002430 hydrocarbons Chemical group 0.000 description 2
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- 125000001424 substituent group Chemical group 0.000 description 2
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- ZUEKXCXHTXJYAR-UHFFFAOYSA-N tetrapropan-2-yl silicate Chemical compound CC(C)O[Si](OC(C)C)(OC(C)C)OC(C)C ZUEKXCXHTXJYAR-UHFFFAOYSA-N 0.000 description 2
- ZQZCOBSUOFHDEE-UHFFFAOYSA-N tetrapropyl silicate Chemical compound CCCO[Si](OCCC)(OCCC)OCCC ZQZCOBSUOFHDEE-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 125000003396 thiol group Chemical group [H]S* 0.000 description 2
- QSQGFMKPTBYFTM-UHFFFAOYSA-N tri(butan-2-yloxy)-propan-2-ylsilane Chemical compound CCC(C)O[Si](OC(C)CC)(OC(C)CC)C(C)C QSQGFMKPTBYFTM-UHFFFAOYSA-N 0.000 description 2
- WAAWAIHPWOJHJJ-UHFFFAOYSA-N tributoxy(propyl)silane Chemical compound CCCCO[Si](CCC)(OCCCC)OCCCC WAAWAIHPWOJHJJ-UHFFFAOYSA-N 0.000 description 2
- IZRJPHXTEXTLHY-UHFFFAOYSA-N triethoxy(2-triethoxysilylethyl)silane Chemical compound CCO[Si](OCC)(OCC)CC[Si](OCC)(OCC)OCC IZRJPHXTEXTLHY-UHFFFAOYSA-N 0.000 description 2
- NIINUVYELHEORX-UHFFFAOYSA-N triethoxy(triethoxysilylmethyl)silane Chemical compound CCO[Si](OCC)(OCC)C[Si](OCC)(OCC)OCC NIINUVYELHEORX-UHFFFAOYSA-N 0.000 description 2
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 2
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- 229910052726 zirconium Inorganic materials 0.000 description 2
- 229940083957 1,2-butanediol Drugs 0.000 description 1
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- PJEMIBXFOHYKMS-UHFFFAOYSA-N tris(2-methylpropoxy)-phenylsilane Chemical compound CC(C)CO[Si](OCC(C)C)(OCC(C)C)C1=CC=CC=C1 PJEMIBXFOHYKMS-UHFFFAOYSA-N 0.000 description 1
- MOGQHPIOEFLJQH-UHFFFAOYSA-N tris(2-methylpropoxy)-propan-2-ylsilane Chemical compound CC(C)CO[Si](OCC(C)C)(OCC(C)C)C(C)C MOGQHPIOEFLJQH-UHFFFAOYSA-N 0.000 description 1
- POQYUENPWRRXNK-UHFFFAOYSA-N tris(2-methylpropoxy)-propylsilane Chemical compound CC(C)CO[Si](CCC)(OCC(C)C)OCC(C)C POQYUENPWRRXNK-UHFFFAOYSA-N 0.000 description 1
- KGOOITCIBGXHJO-UHFFFAOYSA-N tris[(2-methylpropan-2-yl)oxy]-phenylsilane Chemical compound CC(C)(C)O[Si](OC(C)(C)C)(OC(C)(C)C)C1=CC=CC=C1 KGOOITCIBGXHJO-UHFFFAOYSA-N 0.000 description 1
- DIZPPYBTFPZSGK-UHFFFAOYSA-N tris[(2-methylpropan-2-yl)oxy]-propylsilane Chemical compound CCC[Si](OC(C)(C)C)(OC(C)(C)C)OC(C)(C)C DIZPPYBTFPZSGK-UHFFFAOYSA-N 0.000 description 1
- 229930195735 unsaturated hydrocarbon Natural products 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F2/00—Processes of polymerisation
- C08F2/46—Polymerisation initiated by wave energy or particle radiation
- C08F2/48—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light
- C08F2/50—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light with sensitising agents
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F290/00—Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups
- C08F290/02—Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups on to polymers modified by introduction of unsaturated end groups
- C08F290/06—Polymers provided for in subclass C08G
- C08F290/068—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Paints Or Removers (AREA)
- Laminated Bodies (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Abstract
Description
本發明係關於一種皮膜形成用組成物、塗布該皮膜形成用組成物而成之積層體、使用該積層體而成之指紋認證感測器、及硬化皮膜之形成方法。The present invention relates to a film-forming composition, a laminate obtained by applying the film-forming composition, a fingerprint authentication sensor using the laminate, and a method for forming a cured film.
近年來,有時將指紋認證用於安全保護。尤其於智慧型手機等行動式用途中,具備此種指紋認證功能者於市場上大量流通。In recent years, fingerprint authentication is sometimes used for security protection. Especially in mobile applications such as smart phones, those with such fingerprint authentication functions are widely circulated in the market.
具備此種指紋認證功能之感測器有時使用矽化物作為接合墊。 例如,於專利文獻1中揭示有一種接合結構體,其特徵在於:於Si上形成有SiO 2膜,於上述SiO 2膜上形成有BPSG膜或PSG膜,於上述BPSG膜或PSG膜上形成有SiN膜,於上述SiN膜上形成有Poly-Si膜,於上述Poly-Si膜上接合有Al系導線。 [先前技術文獻] [專利文獻] Sensors with this type of fingerprint authentication sometimes use silicide as the bonding pad. For example, Patent Document 1 discloses a junction structure characterized in that an SiO 2 film is formed on Si, a BPSG film or PSG film is formed on the SiO 2 film , and a BPSG film or PSG film is formed on the BPSG film or PSG film. There is a SiN film, a Poly-Si film is formed on the SiN film, and an Al-based wire is bonded to the Poly-Si film. [Prior Art Document] [Patent Document]
[專利文獻1]日本特開2009-105291號公報[Patent Document 1] Japanese Patent Laid-Open No. 2009-105291
[發明所欲解決之課題][Problem to be Solved by the Invention]
上述接合墊(於專利文獻1中相當於Poly-Si膜)可藉由光微影法形成。因此,要求形成接合墊之皮膜形成用組成物具有優異之顯影性。The aforementioned bonding pad (corresponding to the Poly-Si film in Patent Document 1) can be formed by photolithography. Therefore, it is required that the film-forming composition for forming a bonding pad has excellent developability.
又,於指紋認證之用途中,由於有於距表面較近之位置具有接合墊之情況,故就防止意外損傷之觀點而言,要求硬化皮膜具有較高之硬度。In addition, in the application of fingerprint authentication, since there may be bonding pads near the surface, from the viewpoint of preventing accidental damage, the cured film is required to have high hardness.
為了實現此種較高之硬度,研究了使用多官能光聚合性化合物作為形成接合墊之皮膜形成用組成物之方法、或於高溫下使皮膜形成用組成物熱硬化之方法,但此種方法亦存在引起硬化收縮而產生龜裂等課題。In order to achieve such a high hardness, a method of using a polyfunctional photopolymerizable compound as a film-forming composition for forming a bonding pad, or a method of thermally curing a film-forming composition at a high temperature has been studied, but this method There are also problems such as cracking due to hardening shrinkage.
另一方面,指紋認證之用途需要優異之聚光性能,為了實現此種聚光性能,必須增加接合墊之膜厚(例如為10 μm以上)。On the other hand, fingerprint authentication requires excellent light-gathering performance. In order to realize this light-gathering performance, it is necessary to increase the film thickness of the bonding pad (for example, 10 μm or more).
因此,希望有一種即便增加膜厚,顯影性亦優異,並且能夠抑制硬化收縮,能夠形成硬度較高之硬化皮膜之皮膜形成用組成物。Therefore, a film-forming composition that is excellent in developability even when the film thickness is increased, and capable of suppressing curing shrinkage and forming a cured film with high hardness is desired.
因此,本發明之目的在於提供一種即便增加硬化皮膜之膜厚,顯影性亦優異,並且能夠抑制硬化收縮,能夠形成硬度較高之硬化皮膜之皮膜形成用組成物。 [解決課題之技術手段] Therefore, an object of the present invention is to provide a film-forming composition that is excellent in developability even when the film thickness of the cured film is increased, and capable of suppressing curing shrinkage and forming a cured film with high hardness. [Technical means to solve the problem]
本發明人等經過努力研究,結果發現:於含有矽氧烷聚合物、具有兩個以上自由基聚合性不飽和雙鍵之光聚合性化合物、聚合起始劑、硬化劑、光酸產生劑、硬化觸媒及有機溶劑之皮膜形成用組成物中,著眼於矽氧烷聚合物,作為構成上述矽氧烷聚合物之材料,含有下述矽烷系化合物作為構成單體:矽烷系化合物(A),其於分子中包含具有醯胺鍵、及下述羧酸部分之有機基;矽烷系化合物(B),其具有自由基聚合性不飽和雙鍵;及矽烷系化合物(C),其於分子內具有環氧基;將上述矽烷系化合物(A)及上述矽烷系化合物(B)之摻合量設定於規定之範圍內,將相對於構成矽氧烷聚合物之全部構成單體之上述矽烷系化合物(C)之摻合量設定於規定之範圍內,藉此即便增加硬化皮膜之膜厚,顯影性亦優異,並且能夠抑制硬化收縮,能夠形成硬度較高之硬化皮膜,可解決上述所有課題,從而完成本發明。As a result of diligent research, the inventors of the present invention found that: a photopolymerizable compound containing a siloxane polymer, a photopolymerizable compound having two or more radically polymerizable unsaturated double bonds, a polymerization initiator, a hardener, a photoacid generator, In the film-forming composition of a curing catalyst and an organic solvent, focus is placed on a siloxane polymer, and as a material constituting the siloxane polymer, the following silane-based compound is contained as a constituent monomer: silane-based compound (A) , which contains an organic group having an amide bond and the following carboxylic acid moiety in the molecule; a silane compound (B), which has a free radical polymerizable unsaturated double bond; and a silane compound (C), which has a molecular There is an epoxy group in it; the blending amount of the above-mentioned silane-based compound (A) and the above-mentioned silane-based compound (B) is set within the specified range, and the above-mentioned silane By setting the compounding amount of the compound (C) within a specified range, even if the film thickness of the cured film is increased, the developability is excellent, and shrinkage on hardening can be suppressed, and a cured film with high hardness can be formed, solving all the above problems. Problem, thus complete the present invention.
即,本發明係一種皮膜形成用組成物,其特徵在於含有矽氧烷聚合物、具有兩個以上自由基聚合性不飽和雙鍵之光聚合性化合物、聚合起始劑、硬化劑、光酸產生劑、硬化觸媒及有機溶劑,上述矽氧烷聚合物含有下述矽烷系化合物作為構成單體:矽烷系化合物(A),其於分子中包含具有醯胺鍵與羧酸部分或羧酸酯部分或其兩者之有機基;矽烷系化合物(B),其具有自由基聚合性不飽和雙鍵;及矽烷系化合物(C),其於分子內具有環氧基;上述矽烷系化合物(A)與上述矽烷系化合物(B)之莫耳比[上述矽烷系化合物(A):上述矽烷系化合物(B)]為1:0.8~2.4,上述矽烷系化合物(C)相對於構成上述矽氧烷聚合物之全部構成單體之莫耳比[上述矽烷系化合物(C)/構成上述矽氧烷聚合物之全部構成單體]為7~50。That is, the present invention is a film-forming composition characterized by containing a siloxane polymer, a photopolymerizable compound having two or more radically polymerizable unsaturated double bonds, a polymerization initiator, a curing agent, a photoacid Generating agent, hardening catalyst and organic solvent, the above-mentioned siloxane polymer contains the following silane compound as a constituent monomer: silane compound (A), which contains amide bond and carboxylic acid moiety or carboxylic acid moiety in its molecule The organic group of the ester moiety or both; the silane compound (B), which has a radically polymerizable unsaturated double bond; and the silane compound (C), which has an epoxy group in the molecule; the above silane compound ( The molar ratio of A) to the above-mentioned silane-based compound (B) [the above-mentioned silane-based compound (A): the above-mentioned silane-based compound (B)] is 1:0.8 to 2.4, and the above-mentioned silane-based compound (C) is relatively The molar ratio of all the monomers constituting the oxane polymer [the silane-based compound (C)/the total monomers constituting the siloxane polymer] is 7-50.
於本發明之皮膜形成用組成物中,上述矽氧烷聚合物較佳為進而含有下述矽烷系化合物作為構成單體:矽烷系化合物(D),其係選自四烷氧基矽烷及雙(三烷氧基矽基)烷烴之群之至少1種;及/或矽烷系化合物(E),其係選自烷基三烷氧基矽烷、二烷基二烷氧基矽烷、環烷基三烷氧基矽烷、乙烯基三烷氧基矽烷、及苯基三烷氧基矽烷之群之至少1種。 又,上述矽烷系化合物(D)與上述矽烷系化合物(E)之莫耳比[上述矽烷系化合物(D):上述矽烷系化合物(E)]較佳為1:0.1~10。 又,本發明亦係一種積層體,其特徵在於:於基材上具有上述皮膜形成用組成物之硬化皮膜。 又,本發明亦係一種指紋認證感測器,其特徵在於:其係使用上述積層體而成。 又,本發明亦係一種硬化皮膜之形成方法,其特徵在於具有下述步驟:塗布步驟,將上述皮膜形成用組成物塗布於基材;曝光步驟,對曝光部照射活性能量線,形成硬化皮膜;及顯影步驟,利用顯影液將未曝光部之塗布液溶解去除。 [發明之效果] In the film-forming composition of the present invention, the above-mentioned siloxane polymer preferably further contains the following silane-based compound as a constituent monomer: a silane-based compound (D) selected from tetraalkoxysilane and bis At least one of the group of (trialkoxysilyl)alkanes; and/or silane compound (E), which is selected from the group consisting of alkyltrialkoxysilane, dialkyldialkoxysilane, cycloalkyl At least one kind selected from the group of trialkoxysilane, vinyltrialkoxysilane, and phenyltrialkoxysilane. Moreover, it is preferable that the molar ratio [the said silane type compound (D): the said silane type compound (E)] of the said silane type compound (D) and the said silane type compound (E) is 1:0.1-10. Furthermore, the present invention is also a laminate characterized by having a cured film of the above-mentioned film-forming composition on a base material. In addition, the present invention is also a fingerprint authentication sensor, which is characterized in that it is formed by using the above-mentioned laminated body. Furthermore, the present invention is also a method for forming a cured film, which is characterized by comprising the following steps: a coating step of applying the above-mentioned film-forming composition to a substrate; an exposure step of irradiating the exposed portion with active energy rays to form a cured film and a developing step, using a developing solution to dissolve and remove the coating solution on the unexposed portion. [Effect of Invention]
本發明可提供一種即便增加硬化皮膜之膜厚,顯影性亦優異,並且能夠抑制硬化收縮,能夠形成硬度較高之硬化皮膜之皮膜形成用組成物。The present invention can provide a film-forming composition that is excellent in developability even if the film thickness of the cured film is increased, can suppress curing shrinkage, and can form a cured film with high hardness.
本發明之皮膜形成用組成物之特徵在於含有矽氧烷聚合物、具有兩個以上自由基聚合性不飽和雙鍵之光聚合性化合物、聚合起始劑、硬化劑、光酸產生劑、硬化觸媒及有機溶劑,上述矽氧烷聚合物含有下述矽烷系化合物作為構成單體:矽烷系化合物(A),其於分子中包含具有醯胺鍵與羧酸部分或羧酸酯部分或其兩者之有機基;矽烷系化合物(B),其具有自由基聚合性不飽和雙鍵;及矽烷系化合物(C),其於分子內具有環氧基;上述矽烷系化合物(A)與上述矽烷系化合物(B)之莫耳比[上述矽烷系化合物(A):上述矽烷系化合物(B)]為1:0.8~2.4,上述矽烷系化合物(C)相對於構成上述矽氧烷聚合物之全部構成單體之莫耳比[上述矽烷系化合物(C)/構成上述矽氧烷聚合物之全部構成單體]為7~50。The film-forming composition of the present invention is characterized by containing a siloxane polymer, a photopolymerizable compound having two or more radically polymerizable unsaturated double bonds, a polymerization initiator, a hardener, a photoacid generator, a hardener Catalyst and organic solvent, the above-mentioned siloxane polymer contains the following silane compound as a constituent monomer: silane compound (A), which contains an amide bond and a carboxylic acid moiety or carboxylate moiety or its The organic groups of the two; the silane compound (B), which has a free radical polymerizable unsaturated double bond; and the silane compound (C), which has an epoxy group in the molecule; the above silane compound (A) and the above The molar ratio of the silane-based compound (B) [the above-mentioned silane-based compound (A): the above-mentioned silane-based compound (B)] is 1:0.8 to 2.4, and the above-mentioned silane-based compound (C) is relative to the composition of the above-mentioned siloxane polymer The molar ratio [the above-mentioned silane-based compound (C)/all the constituent monomers constituting the above-mentioned siloxane polymer] of the total constituent monomers is 7-50.
於本發明之皮膜形成用組成物中,藉由不僅具有矽氧烷聚合物中之羧酸部分或羧酸酯部分或其兩者,而且進而具有特定當量之醯胺鍵,從而即便為高膜厚(10 μm以上),亦具有良好之顯影性,藉由以特定當量比率具有自由基聚合性不飽和雙鍵及環氧基,從而即便為高膜厚亦能夠為高硬度,同時能夠對硬化皮膜賦予可抑制硬化收縮之效果。 然而,本發明亦可不必限定於上述機制來解釋。 In the film-forming composition of the present invention, by having not only the carboxylic acid moiety or the carboxylate moiety or both in the siloxane polymer, but also having an amide bond of a specific equivalent, even a high film It is thick (10 μm or more) and has good developability. By having a radically polymerizable unsaturated double bond and an epoxy group in a specific equivalent ratio, it can have high hardness even at a high film thickness, and can resist hardening at the same time. The film imparts the effect of inhibiting hardening shrinkage. However, the present invention can also be interpreted without being limited to the above mechanism.
(矽氧烷聚合物) 上述矽氧烷聚合物含有下述矽烷系化合物作為構成單體:矽烷系化合物(A),其於分子中包含具有醯胺鍵與羧酸部分或羧酸酯部分或其兩者之有機基;矽烷系化合物(B),其具有自由基聚合性不飽和雙鍵;及矽烷系化合物(C),其於分子內具有環氧基。 (Silicone polymer) The above-mentioned siloxane polymer contains the following silane compound as a constituent monomer: a silane compound (A), which contains an organic group having an amide bond and a carboxylic acid part or a carboxylate part or both in the molecule; A silane-based compound (B) having a radically polymerizable unsaturated double bond; and a silane-based compound (C) having an epoxy group in a molecule.
<矽烷系化合物(A)> 上述矽烷系化合物(A)於分子中包含具有醯胺鍵與羧酸部分或羧酸酯部分或其兩者之有機基。 所謂上述於分子中包含具有醯胺鍵與羧酸部分或羧酸酯部分或其兩者之有機基,意指於矽烷分子中具有醯胺鍵與羧酸部分之組合(醯胺酸結構)、或醯胺鍵與羧酸酯部分(醯胺酸酯結構)之任一者、或其雙方。 作為上述矽烷系化合物(A),可適當選擇及使用國際公開第2011/105368號中所揭示之水解性有機矽烷、及其製造方法。 <Silane compound (A)> The above-mentioned silane-based compound (A) contains an organic group having an amide bond, a carboxylic acid moiety or a carboxylate moiety or both in the molecule. The so-called organic group having an amide bond and a carboxylic acid moiety or a carboxylate moiety or both in the molecule above means that the silane molecule has a combination of an amide bond and a carboxylic acid moiety (amic acid structure), Either one of an amide bond and a carboxylate moiety (amido ester structure), or both. As the above-mentioned silane compound (A), the hydrolyzable organosilane disclosed in International Publication No. 2011/105368 and its production method can be appropriately selected and used.
作為上述矽烷系化合物(A),較佳為胺基丙基三乙氧基矽烷與琥珀酸酐、六氫鄰苯二甲酸酐或伊康酸反應所得之反應物,更佳為胺基丙基三乙氧基矽烷與琥珀酸酐反應所得之反應物。 具體而言,其具有下述化學式(1)所表示之結構。 As the above-mentioned silane compound (A), it is preferably the reactant obtained by reacting aminopropyltriethoxysilane with succinic anhydride, hexahydrophthalic anhydride or itaconic acid, more preferably aminopropyltriethoxysilane The reaction product of ethoxysilane and succinic anhydride. Specifically, it has a structure represented by the following chemical formula (1).
<矽烷系化合物(B)> 上述矽烷系化合物(B)具有自由基聚合性不飽和雙鍵。 作為上述矽烷系化合物(B),可例舉:3-(甲基)丙烯醯氧基丙基甲基二甲氧基矽烷、3-(甲基)丙烯醯氧基丙基三甲氧基矽烷、3-(甲基)丙烯醯氧基丙基乙基二乙氧基矽烷、3-(甲基)丙烯醯氧基丙基三乙氧基矽烷等3-(甲基)丙烯醯氧基丙基矽烷化合物;烯丙基三甲氧基矽烷、烯丙基三乙氧基矽烷等烯丙基矽烷化合物。 其中,就較高之水解反應性、及交聯密度之觀點而言,較佳為3-甲基丙烯醯氧基丙基三甲氧基矽烷。 <Silane compound (B)> The above-mentioned silane compound (B) has a radically polymerizable unsaturated double bond. Examples of the silane compound (B) include: 3-(meth)acryloxypropylmethyldimethoxysilane, 3-(meth)acryloxypropyltrimethoxysilane, 3-(meth)acryloxypropylethyldiethoxysilane, 3-(meth)acryloxypropyltriethoxysilane, etc. 3-(meth)acryloxypropyl Silane compounds; allyl silane compounds such as allyl trimethoxysilane and allyl triethoxysilane. Among these, 3-methacryloxypropyltrimethoxysilane is preferred from the viewpoint of high hydrolysis reactivity and crosslink density.
<矽氧烷系化合物(A)與矽烷系化合物(B)之莫耳比> 上述矽氧烷聚合物中上述矽烷系化合物(A)與上述矽烷系化合物(B)之莫耳比[上述矽烷系化合物(A):上述矽烷系化合物(B)]為1:0.8~2.4。 <Molar ratio of siloxane compound (A) to silane compound (B)> The molar ratio of the silane compound (A) to the silane compound (B) in the siloxane polymer [the silane compound (A): the silane compound (B)] is 1:0.8 to 2.4.
若上述莫耳比[上述矽烷系化合物(A):上述矽烷系化合物(B)]未達1:0.8,則無法充分地賦予硬化皮膜與基材或ITO電極之密接性,顯影性(於後述之L/S顯影性試驗中線較粗)降低,若超過1:2.4,則未硬化之皮膜對於顯影液之溶解性、尤其是對於稀鹼性顯影液之溶解性變得不充分(於後述之L/S顯影性試驗中無法形成適當之間隙)。If the above-mentioned molar ratio [the above-mentioned silane-based compound (A): the above-mentioned silane-based compound (B)] is less than 1:0.8, the adhesion between the cured film and the substrate or the ITO electrode cannot be sufficiently provided, and the developability (described later) The middle line of the L/S developability test is thicker) decreases, if it exceeds 1:2.4, the solubility of the unhardened film to the developer, especially the solubility to the dilute alkaline developer becomes insufficient (described later Appropriate gaps cannot be formed in the L/S developability test).
上述矽烷系化合物(A)與上述矽烷系化合物(B)之莫耳比[上述矽烷系化合物(A):上述矽烷系化合物(B)]較佳為1:1.0~2.0,更佳為1:1.5~1.8。The molar ratio of the above-mentioned silane-based compound (A) to the above-mentioned silane-based compound (B) [the above-mentioned silane-based compound (A): the above-mentioned silane-based compound (B)] is preferably 1:1.0-2.0, more preferably 1: 1.5~1.8.
<矽氧烷系化合物(C)> 上述矽氧烷系化合物(C)於分子內具有環氧基。 作為上述矽氧烷系化合物(C),可例舉:3-環氧丙氧基丙基三甲氧基矽烷、3-環氧丙氧基丙基甲基二甲氧基矽烷、3-環氧丙氧基丙基三乙氧基矽烷、3-環氧丙氧基丙基甲基二乙氧基矽烷、2-(3,4-環氧基環己基)乙基三甲氧基矽烷、2-(3,4-環氧基環己基)乙基三乙氧基矽烷、2-(3,4-環氧基環己基)乙基甲基二甲氧基矽烷、及2-(3,4-環氧基環己基)乙基甲基二乙氧基矽烷等。 其中,就交聯密度及較高之水解反應性之觀點而言,較佳為2-(3,4-環氧基環己基)乙基三甲氧基矽烷、3-環氧丙氧基丙基三甲氧基矽烷。 <Siloxane compound (C)> The said siloxane compound (C) has an epoxy group in a molecule|numerator. Examples of the siloxane-based compound (C) include: 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldimethoxysilane, 3-epoxypropylmethyldimethoxysilane, Propoxypropyltriethoxysilane, 3-glycidoxypropylmethyldiethoxysilane, 2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, 2- (3,4-Epoxycyclohexyl)ethyltriethoxysilane, 2-(3,4-Epoxycyclohexyl)ethylmethyldimethoxysilane, and 2-(3,4- Epoxycyclohexyl)ethylmethyldiethoxysilane, etc. Among them, 2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, 3-glycidoxypropyl Trimethoxysilane.
<矽氧烷系化合物(C)之莫耳比> 上述矽氧烷系化合物(C)相對於構成上述矽氧烷聚合物之全部構成單體之莫耳比[上述矽烷系化合物(C)/構成上述矽氧烷聚合物之全部構成單體]為7~50。 <Molar ratio of siloxane compound (C)> The molar ratio of the siloxane-based compound (C) to all the monomers constituting the siloxane polymer [the silane-based compound (C)/the total monomers constituting the siloxane polymer] is 7~50.
若上述矽氧烷系化合物(C)之莫耳比未達7,則於使上述皮膜形成用組成物硬化時引起硬化收縮,若上述矽氧烷系化合物(C)之莫耳比超過50,則未硬化之皮膜對於顯影液之溶解性、尤其是對於稀鹼性顯影液之溶解性變得不充分(於後述之L/S顯影性試驗中無法形成適當之間隙)。If the molar ratio of the above-mentioned siloxane-based compound (C) is less than 7, curing shrinkage will occur when the above-mentioned film-forming composition is cured, and if the molar ratio of the above-mentioned siloxane-based compound (C) exceeds 50, Then, the solubility of the unhardened film to the developer, especially the solubility to the dilute alkaline developer becomes insufficient (the appropriate gap cannot be formed in the L/S developability test described later).
上述矽氧烷系化合物(C)相對於構成上述矽氧烷聚合物之全部構成單體之莫耳比較佳為15~35。The siloxane compound (C) preferably has a molar ratio of 15 to 35 with respect to all the monomers constituting the siloxane polymer.
就良好地賦予硬化皮膜與基材或ITO電極之密接性之觀點而言,上述矽烷系化合物(A)與上述矽氧烷系化合物(C)之莫耳比[上述矽烷系化合物(A):上述矽氧烷系化合物(C)]較佳為1:0.1~1.0,更佳為1:0.2~0.7,進而較佳為1:0.3~0.6。From the viewpoint of providing good adhesion between the cured film and the base material or the ITO electrode, the molar ratio of the above-mentioned silane-based compound (A) to the above-mentioned siloxane-based compound (C) [the above-mentioned silane-based compound (A): The above-mentioned siloxane-based compound (C)] is preferably 1:0.1-1.0, more preferably 1:0.2-0.7, and still more preferably 1:0.3-0.6.
<矽烷化合物(D)及矽烷化合物(E)> 上述矽氧烷聚合物較佳為進而含有下述矽烷系化合物作為構成單體:矽烷系化合物(D),其係選自四烷氧基矽烷及雙(三烷氧基矽基)烷烴之群之至少1種;及/或矽烷系化合物(E),其係選自烷基三烷氧基矽烷、二烷基二烷氧基矽烷、環烷基三烷氧基矽烷、乙烯基三烷氧基矽烷、及苯基三烷氧基矽烷之群之至少1種。 <Silane compound (D) and silane compound (E)> The above-mentioned siloxane polymer preferably further contains the following silane-based compound as a constituent monomer: a silane-based compound (D), which is selected from the group of tetraalkoxysilane and bis(trialkoxysilyl)alkane and/or silane compound (E), which is selected from alkyltrialkoxysilane, dialkyldialkoxysilane, cycloalkyltrialkoxysilane, vinyltrialkoxysilane At least one of the group of alkyl silanes and phenyl trialkoxy silanes.
上述矽烷系化合物(D)係選自四烷氧基矽烷及雙(三烷氧基矽基)烷烴之群之至少1種。The said silane type compound (D) is at least 1 sort(s) chosen from the group of tetraalkoxysilane and bis(trialkoxysilyl)alkane.
作為上述四烷氧基矽烷,可例舉:四甲氧基矽烷、四乙氧基矽烷、四正丙氧基矽烷、四異丙氧基矽烷、四正丁氧基矽烷、四異丁氧基矽烷、乙氧基三甲氧基矽烷、二甲氧基二乙氧基矽烷、及甲氧基三乙氧基矽烷等。Examples of the aforementioned tetraalkoxysilane include: tetramethoxysilane, tetraethoxysilane, tetra-n-propoxysilane, tetraisopropoxysilane, tetra-n-butoxysilane, tetraisobutoxysilane Silane, ethoxytrimethoxysilane, dimethoxydiethoxysilane, and methoxytriethoxysilane, etc.
又,作為上述雙(三烷氧基矽基)烷烴,可例舉:雙(三甲氧基矽基)甲烷、雙(三乙氧基矽基)甲烷、1,2-雙(三甲氧基矽基)乙烷、及1,2-雙(三乙氧基矽基)乙烷等。In addition, examples of the bis(trialkoxysilyl)alkane include bis(trimethoxysilyl)methane, bis(triethoxysilyl)methane, 1,2-bis(trimethoxysilyl) base) ethane, and 1,2-bis(triethoxysilyl)ethane, etc.
其中,就通用性之方面而言,較佳為四甲氧基矽烷、四乙氧基矽烷、四正丙氧基矽烷、四異丙氧基矽烷、四正丁氧基矽烷、四異丁氧基矽烷、雙(三乙氧基矽基)甲烷、及1,2-雙(三乙氧基矽基)乙烷,更佳為四甲氧基矽烷、四乙氧基矽烷、及四異丙氧基矽烷。Among them, in terms of versatility, tetramethoxysilane, tetraethoxysilane, tetra-n-propoxysilane, tetraisopropoxysilane, tetra-n-butoxysilane, tetraisobutoxysilane are preferred. silane, bis(triethoxysilyl)methane, and 1,2-bis(triethoxysilyl)ethane, more preferably tetramethoxysilane, tetraethoxysilane, and tetraisopropyl Oxysilane.
上述矽烷系化合物(E)係選自烷基三烷氧基矽烷、二烷基二烷氧基矽烷、環烷基三烷氧基矽烷、乙烯基三烷氧基矽烷、及苯基三烷氧基矽烷之群之至少1種。 關於上述矽烷系化合物(E),作為具有飽和烴基者,較佳為烷基三烷氧基矽烷,作為具有不飽和烴基者,較佳為苯基三烷氧基矽烷。 The above-mentioned silane compound (E) is selected from the group consisting of alkyltrialkoxysilane, dialkyldialkoxysilane, cycloalkyltrialkoxysilane, vinyltrialkoxysilane, and phenyltrialkoxysilane At least one of the group of silanes. As for the said silane compound (E), it is preferable that it is an alkyltrialkoxysilane as what has a saturated hydrocarbon group, and it is preferable that it is a phenyltrialkoxysilane as what has an unsaturated hydrocarbon group.
作為上述烷基三烷氧基矽烷,可例舉:甲基三甲氧基矽烷、甲基三乙氧基矽烷、甲基三正丙氧基矽烷、甲基三異丙氧基矽烷、甲基三正丁氧基矽烷、甲基三異丁氧基矽烷、甲基三第二丁氧基矽烷、甲基三第三丁氧基矽烷、乙基三甲氧基矽烷、乙基三乙氧基矽烷、乙基三正丙氧基矽烷、乙基三異丙氧基矽烷、乙基三正丁氧基矽烷、乙基三異丁氧基矽烷、正丙基三甲氧基矽烷、正丙基三乙氧基矽烷、正丙基三正丙氧基矽烷、正丙基三異丙氧基矽烷、正丙基三正丁氧基矽烷、正丙基三異丁氧基矽烷、正丙基三第二丁氧基矽烷、正丙基三第三丁氧基矽烷、異丙基三甲氧基矽烷、異丙基三乙氧基矽烷、異丙基三正丙氧基矽烷、異丙基三異丙氧基矽烷、異丙基三正丁氧基矽烷、異丙基三異丁氧基矽烷、異丙基三第二丁氧基矽烷、及異丙基三第三丁氧基矽烷等。Examples of the above-mentioned alkyltrialkoxysilane include: methyltrimethoxysilane, methyltriethoxysilane, methyltri-n-propoxysilane, methyltriisopropoxysilane, methyltrimethoxysilane, n-butoxysilane, methyl triisobutoxysilane, methyl tri-second butoxysilane, methyl tri-tertiary butoxysilane, ethyl trimethoxysilane, ethyl triethoxysilane, Ethyltri-n-propoxysilane, ethyltriisopropoxysilane, ethyltri-n-butoxysilane, ethyltriisobutoxysilane, n-propyltrimethoxysilane, n-propyltriethoxysilane N-propyl silane, n-propyl tri-n-propoxysilane, n-propyl tri-isopropoxy silane, n-propyl tri-n-butoxy silane, n-propyl tri-isobutoxy silane, n-propyl tri-butyl Oxysilane, n-propyltri-tert-butoxysilane, isopropyltrimethoxysilane, isopropyltriethoxysilane, isopropyltri-n-propoxysilane, isopropyltriisopropoxysilane Silane, isopropyltri-n-butoxysilane, isopropyltriisobutoxysilane, isopropyltri-2-butoxysilane, isopropyltri-3-butoxysilane, etc.
作為上述二烷基二烷氧基矽烷,可例舉:二甲基二甲氧基矽烷、二甲基二乙氧基矽烷、二甲基二正丙氧基矽烷、二甲基二異丙氧基矽烷、二甲基二正丁氧基矽烷、二甲基二異丁氧基矽烷、二甲基二第二丁氧基矽烷、二甲基二第三丁氧基矽烷、二乙基二甲氧基矽烷、二乙基二乙氧基矽烷、二乙基二正丙氧基矽烷、二乙基二異丙氧基矽烷、二乙基二正丁氧基矽烷、二乙基二異丁氧基矽烷、二乙基二第二丁氧基矽烷、二乙基二第三丁氧基矽烷、二正丙基二甲氧基矽烷、二正丙基二乙氧基矽烷、二正丙基二正丙氧基矽烷、二正丙基二異丙氧基矽烷、二正丙基二正丁氧基矽烷、二正丙基二異丁氧基矽烷、二正丙基二第二丁氧基矽烷、二正丙基二第三丁氧基矽烷、二異丙基二甲氧基矽烷、二異丙基二乙氧基矽烷、二異丙基二正丙氧基矽烷、二異丙基二異丙氧基矽烷、二異丙基二正丁氧基矽烷、二異丙基二異丁氧基矽烷、二異丙基二第二丁氧基矽烷、二異丙基二第三丁氧基矽烷、二正丁基二甲氧基矽烷、二正丁基二乙氧基矽烷、二正丁基二正丙氧基矽烷、二正丁基二異丙氧基矽烷、二正丁基二正丁氧基矽烷、二正丁基二異丁氧基矽烷、二正丁基二第二丁氧基矽烷、二正丁基二第三丁氧基矽烷、二異丁基二甲氧基矽烷、二異丁基二乙氧基矽烷、二異丁基二正丙氧基矽烷、二異丁基二異丙氧基矽烷、二異丁基二正丁氧基矽烷、二異丁基二異丁氧基矽烷、二異丁基二第二丁氧基矽烷、二異丁基二第三丁氧基矽烷、二第二丁基二甲氧基矽烷、二第二丁基二乙氧基矽烷、二第二丁基二正丙氧基矽烷、二第二丁基二異丙氧基矽烷、二第二丁基二正丁氧基矽烷、二第二丁基二異丁氧基矽烷、二第二丁基二第二丁氧基矽烷、二第二丁基二第三丁氧基矽烷、二第三丁基二甲氧基矽烷、二第三丁基二乙氧基矽烷、二第三丁基二正丙氧基矽烷、二第三丁基二異丙氧基矽烷、二第三丁基二正丁氧基矽烷、二第三丁基二異丁氧基矽烷、二第三丁基二第二丁氧基矽烷、及二第三丁基二第三丁氧基矽烷等。Examples of the above-mentioned dialkyldialkoxysilane include: dimethyldimethoxysilane, dimethyldiethoxysilane, dimethyldi-n-propoxysilane, dimethyldiisopropoxysilane dimethylsilane, dimethyldi-n-butoxysilane, dimethyldiisobutoxysilane, dimethyldisecond-butoxysilane, dimethyldi-tertiary-butoxysilane, diethyldimethylsilane Oxysilane, diethyldiethoxysilane, diethyldi-n-propoxysilane, diethyldiisopropoxysilane, diethyldi-n-butoxysilane, diethyldiisobutoxysilane Diethylsilane, diethyldi-2-butoxysilane, diethyldi-3-butoxysilane, di-n-propyldimethoxysilane, di-n-propyldiethoxysilane, di-n-propyldi n-propoxysilane, di-n-propyldiisopropoxysilane, di-n-propyldi-butoxysilane, di-n-propyldiisobutoxysilane, di-n-propyldi-2-butoxysilane , Di-n-propyl di-tert-butoxysilane, diisopropyldimethoxysilane, diisopropyldiethoxysilane, diisopropyldi-n-propoxysilane, diisopropyldiiso Propoxysilane, Diisopropyldi-n-butoxysilane, Diisopropyldiisobutoxysilane, Diisopropyldi-2-butoxysilane, Diisopropyldi-3-butoxysilane , Di-n-butyldimethoxysilane, di-n-butyldiethoxysilane, di-n-butyldi-n-propoxysilane, di-n-butyldiisopropoxysilane, di-n-butyldi-n-butyl Oxysilane, di-n-butyldiisobutoxysilane, di-n-butyldi-2-butoxysilane, di-n-butyldi-3-butoxysilane, diisobutyldimethoxysilane, Isobutyldiethoxysilane, diisobutyldi-n-propoxysilane, diisobutyldiisopropoxysilane, diisobutyldi-n-butoxysilane, diisobutyldiisobutoxysilane base silane, diisobutyl di-second butoxysilane, diisobutyl di-tertiary butoxysilane, di-second butyldimethoxysilane, di-second butyldiethoxysilane, di- 2nd butyldi-n-propoxysilane, 2nd butyldiisopropoxysilane, 2nd butyldi-n-butoxysilane, 2nd butyldiisobutoxysilane, 2nd Butyl di-2-butoxysilane, di-2-butyl di-3-butoxysilane, di-3-butyldimethoxysilane, di-3-butyldiethoxysilane, di-3-butyl Di-n-propoxysilane, di-tertiary butyldiisopropoxysilane, di-tertiary butyldi-n-butoxysilane, di-tertiary butyldiisobutoxysilane, di-tertiary butyl di- Dibutoxysilane, and di-tertiary butyldi-tertiary butoxysilane, etc.
作為上述環烷基三烷氧基矽烷,可例舉:環戊基三甲氧基矽烷、環戊基三乙氧基矽烷、環戊基三正丙氧基矽烷、環戊基三異丙氧基矽烷、環戊基三正丁氧基矽烷、環戊基三異丁氧基矽烷、環戊基三第二丁氧基矽烷、環戊基三第二丁氧基矽烷、環己基三甲氧基矽烷、環己基三乙氧基矽烷、環己基三正丙氧基矽烷、環己基三異丙氧基矽烷、環己基三正丁氧基矽烷、環己基三異丁氧基矽烷、環己基三第二丁氧基矽烷、及環己基三第三丁氧基矽烷等。 作為上述乙烯基三烷氧基矽烷,可例舉:乙烯基三甲氧基矽烷、乙烯基三乙氧基矽烷、乙烯基三正丙氧基矽烷、乙烯基三異丙氧基矽烷、乙烯基三正丁氧基矽烷、乙烯基三異丁氧基矽烷、乙烯基三第二丁氧基矽烷、及乙烯基三第三丁氧基矽烷等。 Examples of the cycloalkyltrialkoxysilane include: cyclopentyltrimethoxysilane, cyclopentyltriethoxysilane, cyclopentyltri-n-propoxysilane, cyclopentyltriisopropoxysilane Silane, Cyclopentyltri-n-butoxysilane, Cyclopentyltriisobutoxysilane, Cyclopentyltri-2-butoxysilane, Cyclopentyltri-2-butoxysilane, Cyclohexyltrimethoxysilane , cyclohexyltriethoxysilane, cyclohexyltri-n-propoxysilane, cyclohexyltriisopropoxysilane, cyclohexyltri-n-butoxysilane, cyclohexyltriisobutoxysilane, cyclohexyltri-n-propoxysilane Butoxysilane, and cyclohexyl tri-tertiary butoxysilane, etc. Examples of the above-mentioned vinyltrialkoxysilane include: vinyltrimethoxysilane, vinyltriethoxysilane, vinyltri-n-propoxysilane, vinyltriisopropoxysilane, vinyltris- n-butoxysilane, vinyl triisobutoxysilane, vinyl tri-second butoxysilane, vinyl tri-tertiary butoxysilane, etc.
作為上述苯基三烷氧基矽烷,可例舉:苯基三甲氧基矽烷、苯基三乙氧基矽烷、苯基三正丙氧基矽烷、苯基三異丙氧基矽烷、苯基三正丁氧基矽烷、苯基三異丁氧基矽烷、苯基三第二丁氧基矽烷、及苯基三第三丁氧基矽烷等。 其中,較佳為選自甲基三乙氧基矽烷、二甲基二甲氧基矽烷、環己基三乙氧基矽烷、乙烯基三乙氧基矽烷、苯基三乙氧基矽烷之群之至少1種,更佳為甲基三乙氧基矽烷及苯基三乙氧基矽烷。 Examples of the above-mentioned phenyltrialkoxysilane include: phenyltrimethoxysilane, phenyltriethoxysilane, phenyltri-n-propoxysilane, phenyltriisopropoxysilane, phenyltriisopropoxysilane, N-butoxysilane, phenyl triisobutoxysilane, phenyl tri-second butoxysilane, and phenyl tri-tertiary butoxysilane, etc. Among them, preferably selected from the group of methyltriethoxysilane, dimethyldimethoxysilane, cyclohexyltriethoxysilane, vinyltriethoxysilane, phenyltriethoxysilane At least one kind, more preferably methyltriethoxysilane and phenyltriethoxysilane.
上述矽烷系化合物(D)與上述矽烷系化合物(E)之莫耳比[上述矽烷系化合物(D):上述矽烷系化合物(E)]較佳為1:0.1~10。 若上述矽烷系化合物(D)與上述矽烷系化合物(E)之莫耳比處於上述範圍內,則可兼顧硬化皮膜之密接性、及未硬化之皮膜之顯影性。 上述矽烷系化合物(D)與上述矽烷系化合物(E)之莫耳比更佳為1:1.2~3。 The molar ratio of the silane-based compound (D) to the silane-based compound (E) [the silane-based compound (D): the silane-based compound (E)] is preferably 1:0.1-10. When the molar ratio of the silane-based compound (D) to the silane-based compound (E) is within the above range, both the adhesion of the cured film and the developability of the uncured film can be achieved. The molar ratio of the above-mentioned silane-based compound (D) to the above-mentioned silane-based compound (E) is more preferably 1:1.2-3.
就硬化皮膜與基材或ITO電極之密接性、及未硬化之皮膜於顯影液中之溶解性之觀點而言,上述矽烷系化合物(A)與上述矽烷系化合物(E)之莫耳比[上述矽烷系化合物(A):上述矽烷系化合物(E)]較佳為1:0.1~5.0。 上述莫耳比[上述矽烷系化合物(A):上述矽烷系化合物(E)]更佳為1:0.8~3.0,進而較佳為1:1.0~2.5。 From the viewpoint of the adhesion between the cured film and the substrate or the ITO electrode, and the solubility of the uncured film in the developer solution, the molar ratio of the above-mentioned silane-based compound (A) to the above-mentioned silane-based compound (E) [ The above-mentioned silane-based compound (A): the above-mentioned silane-based compound (E)] is preferably 1:0.1-5.0. The said molar ratio [the said silane compound (A): the said silane compound (E)] is more preferably 1:0.8-3.0, More preferably, it is 1:1.0-2.5.
<其他矽烷系化合物> 上述矽氧烷聚合物亦可含有其他矽烷系化合物。 作為其他矽烷系化合物,可例舉具有巰基之矽烷系化合物,例如可例舉:3-巰基丙基三甲氧基矽烷、3-巰基丙基甲基二甲氧基矽烷、2-巰基乙基三甲氧基矽烷等巰基烷基三烷氧基矽烷化合物。 <Other silane compounds> The above-mentioned siloxane polymer may also contain other silane-based compounds. As other silane-based compounds, silane-based compounds having a mercapto group can be mentioned, for example: 3-mercaptopropyltrimethoxysilane, 3-mercaptopropylmethyldimethoxysilane, 2-mercaptoethyltrimethoxysilane Mercaptoalkyltrialkoxysilane compounds such as oxysilane.
就良好地賦予硬化皮膜與基材或ITO電極之密接性之觀點而言,上述矽烷系化合物(A)與上述其他矽烷系化合物之莫耳比[上述矽烷系化合物(A):上述其他矽烷系化合物]較佳為1:0.1~1.0,更佳為1:0.2~0.7,進而較佳為1:0.3~0.6。From the viewpoint of providing good adhesion between the cured film and the substrate or the ITO electrode, the molar ratio of the above-mentioned silane-based compound (A) to the above-mentioned other silane-based compound [the above-mentioned silane-based compound (A): the above-mentioned other silane-based compound Compound] is preferably 1:0.1-1.0, more preferably 1:0.2-0.7, and still more preferably 1:0.3-0.6.
<矽氧烷聚合物之製造方法> 其次,對上述矽氧烷聚合物之製造方法進行說明。 作為上述矽氧烷聚合物之製造方法,例如可利用下述方法:於適當之容器內將上述矽烷系化合物(A)及上述矽烷系化合物(B)混合後,將上述矽烷系化合物(C)、視需要之上述矽烷系化合物(D)、上述矽烷系化合物(E)、及上述其他矽烷系化合物混合,添加水、聚合觸媒、視需要之反應溶劑,使其等水解並縮合。 於上述縮合反應後,利用萃取、脫水、溶劑去除等方法將上述矽氧烷聚合物以外之無用之副生成物去除,藉此可得到上述矽氧烷聚合物。 <Production method of siloxane polymer> Next, the manufacturing method of the said siloxane polymer is demonstrated. As a method for producing the above-mentioned siloxane polymer, for example, the following method can be used: after mixing the above-mentioned silane-based compound (A) and the above-mentioned silane-based compound (B) in a suitable container, the above-mentioned silane-based compound (C) . If necessary, the above-mentioned silane-based compound (D), the above-mentioned silane-based compound (E), and the above-mentioned other silane-based compound are mixed, and water, a polymerization catalyst, and an optional reaction solvent are added to make them hydrolyze and condense. After the above-mentioned condensation reaction, use extraction, dehydration, solvent removal and other methods to remove unnecessary by-products other than the above-mentioned siloxane polymer, thereby obtaining the above-mentioned siloxane polymer.
作為上述水之量,較佳為使水之分子與添加於容器內之矽烷系化合物之全部水解性取代基之數量成為相同數量之程度之量。 並且,由於本發明所利用之主要之矽烷系化合物中,每個分子具有3或4個水解性取代基,故於包含大量此種矽烷系化合物時,可簡單地將水之量設為水之分子數相對於添加於容器內之矽烷系化合物之全部分子數為3~4倍(莫耳比為矽烷系化合物之總量:水=1:3~4)之程度之量。 As the quantity of the said water, it is preferable that it is the quantity which makes the quantity of the molecule|numerator of water equal to the quantity of all the hydrolyzable substituents of the silane type compound added in a container. And, since each molecule of the main silane compounds utilized in the present invention has 3 or 4 hydrolyzable substituents, when a large amount of such silane compounds are included, the amount of water can be simply set as the amount of water. The number of molecules is 3 to 4 times the total number of molecules of the silane compound added in the container (the molar ratio is the total amount of the silane compound: water = 1:3 to 4).
作為上述聚合觸媒,例如可使用:乙酸、鹽酸等酸觸媒;氨、三乙胺、環己胺、氫氧化四甲基銨等鹼性觸媒。 作為上述聚合觸媒之量,較佳為聚合觸媒之分子數相對於添加於容器內之矽烷系化合物之全部分子數為0.05~0.2倍(莫耳比為矽烷系化合物之總量:聚合觸媒=1:0.05~0.2)之程度之量。 As the above-mentioned polymerization catalyst, for example, acid catalysts such as acetic acid and hydrochloric acid; alkaline catalysts such as ammonia, triethylamine, cyclohexylamine and tetramethylammonium hydroxide, can be used. As the amount of the above-mentioned polymerization catalyst, it is preferable that the number of molecules of the polymerization catalyst is 0.05 to 0.2 times that of the total number of molecules of the silane compound added in the container (the molar ratio is the total amount of the silane compound: polymerization catalyst Medium = 1: the amount of the degree of 0.05 ~ 0.2).
作為上述反應溶劑,較佳為乙醇、正丙醇、異丙醇等低級醇、丙酮、甲基乙基酮等酮化合物、乙酸乙酯、乙酸正丙酯等酯化物,其中更佳為低級醇,就可維持適度之反應溫度,容易蒸餾去除之觀點而言,進而較佳為乙醇、異丙醇。 反應溫度較佳為60~80℃,為了使反應充分進行,反應時間較佳為大致2~24小時。 As the above-mentioned reaction solvent, lower alcohols such as ethanol, n-propanol and isopropanol, ketone compounds such as acetone and methyl ethyl ketone, esterified products such as ethyl acetate and n-propyl acetate are preferable, and among them, lower alcohols are more preferable. , from the viewpoint of being able to maintain a moderate reaction temperature and being easily distilled off, ethanol and isopropanol are more preferred. The reaction temperature is preferably 60-80° C., and the reaction time is preferably roughly 2-24 hours in order to fully proceed the reaction.
<矽氧烷聚合物> 上述矽氧烷聚合物之重量平均分子量(Mw)較佳為1000~1萬。若上述重量平均分子量(Mw)未達1000,則有皮膜形成用組成物之硬化性降低之情形,若上述重量平均分子量(Mw)超過1萬,則有皮膜形成用組成物之溶解性降低之情形。 上述矽氧烷聚合物之重量平均分子量(Mw)更佳為1500~8000,進而較佳為2000~4000。 <Siloxane Polymer> The weight average molecular weight (Mw) of the above-mentioned siloxane polymer is preferably 1,000 to 10,000. If the above-mentioned weight average molecular weight (Mw) is less than 1000, the curability of the film-forming composition may decrease, and if the above-mentioned weight-average molecular weight (Mw) exceeds 10,000, the solubility of the film-forming composition may decrease. situation. The weight average molecular weight (Mw) of the said siloxane polymer is more preferably 1,500-8,000, and still more preferably 2,000-4,000.
再者,作為上述重量平均分子量(Mw),可使上述矽氧烷聚合物溶解,製作0.02質量%之溶液,通過過濾器(GL Science Inc.製造,GL層析盤(GL chromatodisc),水系25A,孔徑0.2 μm)後,使用由尺寸排除層析儀、折射率檢測器所構成之Semi-Micro GPC/SEC分析系統(日本分光公司製造),按照以下條件進行測定。 管柱:KF-603、KF-604(昭和電工公司製造) RI檢測器:RI-4035(日本分光公司製造) PDA檢測器:MD-4015(日本分光公司製造) 溶離液:THF 流速:1.0 ml/min 注入量:100 μl In addition, as the above-mentioned weight average molecular weight (Mw), the above-mentioned siloxane polymer can be dissolved to prepare a 0.02% by mass solution, which is passed through a filter (manufactured by GL Science Inc., GL chromatodisc (GL chromatodisc), water system 25A , pore diameter 0.2 μm), using a Semi-Micro GPC/SEC analysis system (manufactured by JASCO Corporation) consisting of a size exclusion chromatograph and a refractive index detector, the measurement was carried out under the following conditions. String: KF-603, KF-604 (manufactured by Showa Denko) RI detector: RI-4035 (manufactured by JASCO Corporation) PDA detector: MD-4015 (manufactured by JASCO Corporation) Eluent: THF Flow rate: 1.0ml/min Injection volume: 100 μl
(具有兩個以上自由基聚合性不飽和雙鍵之光聚合性化合物) 本發明之皮膜形成用組成物含有具有兩個以上自由基聚合性不飽和雙鍵之光聚合性化合物。 (Photopolymerizable compounds having two or more radically polymerizable unsaturated double bonds) The film-forming composition of the present invention contains a photopolymerizable compound having two or more radically polymerizable unsaturated double bonds.
作為上述具有兩個以上自由基聚合性不飽和雙鍵之光聚合性化合物,可例舉二價以上之含羥基之化合物與(甲基)丙烯酸之酯化物,例如1,3-丁二醇二(甲基)丙烯酸酯、1,4-丁二醇二(甲基)丙烯酸酯、1,6-己二醇二(甲基)丙烯酸酯、1,9-壬二醇二(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、三環癸烷二甲醇二(甲基)丙烯酸酯、二乙二醇二(甲基)丙烯酸酯、三乙二醇二(甲基)丙烯酸酯、四乙二醇二(甲基)丙烯酸酯、二丙二醇二(甲基)丙烯酸酯、三丙二醇二(甲基)丙烯酸酯、四丙二醇二(甲基)丙烯酸酯、雙酚A二(甲基)丙烯酸酯、三(2-羥基乙基)異三聚氰酸二(甲基)丙烯酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、甘油三(甲基)丙烯酸酯、新戊四醇三(甲基)丙烯酸酯、三(2-羥基乙基)異三聚氰酸三(甲基)丙烯酸酯、二-三羥甲基丙烷四(甲基)丙烯酸酯、新戊四醇四(甲基)丙烯酸酯、二新戊四醇五(甲基)丙烯酸酯、及二新戊四醇六(甲基)丙烯酸酯等。As the above-mentioned photopolymerizable compound having two or more radically polymerizable unsaturated double bonds, esterification products of hydroxyl-containing compounds having a divalent or higher price and (meth)acrylic acid, such as 1,3-butanediol diol (Meth)acrylate, 1,4-butanediol di(meth)acrylate, 1,6-hexanediol di(meth)acrylate, 1,9-nonanediol di(meth)acrylate ester, neopentyl glycol di(meth)acrylate, tricyclodecane dimethanol di(meth)acrylate, diethylene glycol di(meth)acrylate, triethylene glycol di(meth)acrylate ester, tetraethylene glycol di(meth)acrylate, dipropylene glycol di(meth)acrylate, tripropylene glycol di(meth)acrylate, tetrapropylene glycol di(meth)acrylate, bisphenol A di(meth)acrylate base) acrylate, tris(2-hydroxyethyl)isocyanuric acid di(meth)acrylate, trimethylolpropane tri(meth)acrylate, glycerol tri(meth)acrylate, neopentyl Tetraol tri(meth)acrylate, Tris(2-hydroxyethyl)isocyanuric acid tri(meth)acrylate, Di-trimethylolpropane tetra(meth)acrylate, Neopentylthritol Tetra(meth)acrylate, diperythritol penta(meth)acrylate, dipenteoerythritol hexa(meth)acrylate, and the like.
其中,就可提高交聯密度,對優異之硬化皮膜賦予硬度之觀點而言,較佳為具有三官能以上之反應性官能基之化合物,例如三羥甲基丙烷三(甲基)丙烯酸酯、甘油三(甲基)丙烯酸酯、新戊四醇三(甲基)丙烯酸酯、三(2-羥基乙基)異三聚氰酸三(甲基)丙烯酸酯、二-三羥甲基丙烷四(甲基)丙烯酸酯、新戊四醇四(甲基)丙烯酸酯、二新戊四醇五(甲基)丙烯酸酯、及二新戊四醇六(甲基)丙烯酸酯,更佳為三(2-羥基乙基)異三聚氰酸三(甲基)丙烯酸酯、及二新戊四醇六(甲基)丙烯酸酯。Among them, from the viewpoint of increasing the crosslinking density and imparting hardness to an excellent cured film, compounds having reactive functional groups with more than three functions are preferred, such as trimethylolpropane tri(meth)acrylate, Glycerin tri(meth)acrylate, Neopentylthritol tri(meth)acrylate, Tris(2-hydroxyethyl)isocyanuric acid tri(meth)acrylate, Di-trimethylolpropane tetra (Meth) acrylate, neopentylthritol tetra(meth)acrylate, diperythritol penta(meth)acrylate, and diperythritol hexa(meth)acrylate, more preferably three (2-Hydroxyethyl)isocyanuric acid tri(meth)acrylate, and diperythritol hexa(meth)acrylate.
(聚合起始劑) 本發明之皮膜形成用組成物含有聚合起始劑。 作為上述聚合起始劑,較佳為使用於藉由後述光微影法來形成硬化皮膜時,可獲得充分之光硬化反應之光聚合起始劑。 作為此種光聚合起始劑,例如可例舉:二苯乙二酮、安息香、二苯甲酮、樟腦醌、2,2-二甲氧基-1,2-二苯基乙烷-1-酮、4,4'-雙(二甲基胺基)二苯甲酮、4,4'-雙(二乙基胺基)二苯甲酮、2-羥基-2-甲基-1-苯基丙烷-1-酮、1-羥基環己基苯基酮、2,2-二甲氧基-2-苯基苯乙酮、2-甲基-[4'-(甲硫基)苯基]-2-啉基-1-丙酮、2-苄基-2-二甲基胺基-1-(4-啉基苯基)-丁烷-1-酮、2,4,6-三甲基苯甲醯基-二苯基氧化膦、雙(2,4,6-三甲基苯甲醯基)-苯基氧化膦等羰化物;1,3-雙(三氯甲基)-5-(2'-氯苯基)-1,3,5-三及2-[2-(2-呋喃基)乙烯基]-4,6-雙(三氯甲基)-1,3,5-三等三鹵甲烷類;2,2'-雙(2-氯苯基)4,5,4',5'-四苯基1,2'-聯咪唑(2,2'-bis(2-chlorophenyl)4,5,4',5'-tetraphenyl 1,2'-biimidazole)等咪唑二聚物;2-異丙基9-氧硫 、2,4-二甲基9-氧硫 、2,4-二乙基9-氧硫 、2,4-二氯9-氧硫 等9-氧硫 系化合物等。 該等光聚合起始劑可單獨使用或組合兩種以上使用。又,亦可與任意光敏劑組合。 (Polymerization initiator) The film-forming composition of the present invention contains a polymerization initiator. As the above-mentioned polymerization initiator, it is preferable to use a photopolymerization initiator that can obtain a sufficient photocuring reaction when forming a cured film by the photolithography method described later. Examples of such photopolymerization initiators include benzophenone, benzoin, benzophenone, camphorquinone, 2,2-dimethoxy-1,2-diphenylethane-1 -ketone, 4,4'-bis(dimethylamino)benzophenone, 4,4'-bis(diethylamino)benzophenone, 2-hydroxy-2-methyl-1- Phenylpropan-1-one, 1-hydroxycyclohexyl phenyl ketone, 2,2-dimethoxy-2-phenylacetophenone, 2-methyl-[4'-(methylthio)phenyl ]-2- Linyl-1-acetone, 2-benzyl-2-dimethylamino-1-(4- Linylphenyl)-butan-1-one, 2,4,6-trimethylbenzoyl-diphenylphosphine oxide, bis(2,4,6-trimethylbenzoyl)- Carbonyl compounds such as phenylphosphine oxide; 1,3-bis(trichloromethyl)-5-(2'-chlorophenyl)-1,3,5-tri And 2-[2-(2-furyl)ethenyl]-4,6-bis(trichloromethyl)-1,3,5-tri 2,2'-bis(2-chlorophenyl) 4,5,4',5'-tetraphenyl 1,2'-biimidazole (2,2'-bis(2-chlorophenyl )4,5,4',5'-tetraphenyl 1,2'-biimidazole) and other imidazole dimers; 2-isopropyl 9-oxosulfur , 2,4-Dimethyl 9-oxosulfur , 2,4-Diethyl 9-oxosulfur , 2,4-dichloro-9-oxosulfur 9-oxosulfur Department of compounds, etc. These photopolymerization initiators can be used individually or in combination of 2 or more types. Moreover, it can also combine with arbitrary photosensitizers.
(有機溶劑) 本發明之皮膜形成用組成物含有有機溶劑。 作為上述有機溶劑,可使用醇類、多元醇類及其衍生物、酮系有機溶劑、酯系有機溶劑等有機溶劑。 (Organic solvents) The film-forming composition of the present invention contains an organic solvent. As the above-mentioned organic solvent, organic solvents such as alcohols, polyols and derivatives thereof, ketone-based organic solvents, and ester-based organic solvents can be used.
作為上述醇類,可例舉:甲醇、乙醇、正丙醇、異丙醇、正丁醇、異丁醇、第二丁醇等低級醇。As said alcohols, lower alcohols, such as methanol, ethanol, n-propanol, isopropanol, n-butanol, isobutanol, and di-butanol, are mentioned.
作為上述多元醇類,可例舉:乙二醇、丙二醇、1,2-丁二醇、1,3-丁二醇、二乙二醇及二丙二醇等。As said polyols, ethylene glycol, propylene glycol, 1, 2- butanediol, 1, 3- butanediol, diethylene glycol, dipropylene glycol, etc. are mentioned.
作為上述多元醇類之衍生物,可例舉:乙二醇單甲醚、乙二醇單乙醚、乙二醇單正丙醚、乙二醇單異丙醚、乙二醇單正丁醚、乙二醇單異丁醚、乙二醇單苯醚、丙二醇單甲醚、丙二醇單乙醚、丙二醇單正丙醚、丙二醇單異丙醚、丙二醇單正丁醚、丙二醇單異丁醚、丙二醇單苯醚、二乙二醇單甲醚、二乙二醇單乙醚、二乙二醇單正丙醚、二乙二醇單異丙醚、二乙二醇單正丁醚、二乙二醇單異丁醚、二丙二醇單甲醚、二丙二醇單乙醚、二丙二醇正丙醚、二丙二醇異丙醚、二丙二醇正丁醚、二丙二醇異丁醚等二醇單醚類。 又,可例舉:乙二醇單甲醚乙酸酯、乙二醇單甲醚丙酸酯、乙二醇單乙醚乙酸酯、乙二醇單正丙醚乙酸酯、乙二醇單異丙醚乙酸酯、乙二醇單正丁醚乙酸酯、乙二醇單異丁醚乙酸酯、丙二醇單甲醚乙酸酯、丙二醇單乙醚乙酸酯、丙二醇單正丙醚乙酸酯、丙二醇單異丙醚乙酸酯、丙二醇單正丁醚乙酸酯、丙二醇單異丁醚乙酸酯、二乙二醇單甲醚乙酸酯、二乙二醇單乙醚乙酸酯、二乙二醇單正丙醚乙酸酯、二乙二醇單異丙醚乙酸酯、二乙二醇單正丁醚乙酸酯、二乙二醇單異丁醚乙酸酯、二丙二醇單甲醚乙酸酯、二丙二醇單乙醚乙酸酯、二丙二醇單正丙醚乙酸酯、二丙二醇單異丙醚乙酸酯、二丙二醇單正丁醚乙酸酯、二丙二醇單異丁醚乙酸酯等二醇單醚醯化物類。 Examples of derivatives of the above polyols include ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol mono-n-propyl ether, ethylene glycol monoisopropyl ether, ethylene glycol mono-n-butyl ether, Ethylene glycol monoisobutyl ether, ethylene glycol monophenyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol mono-n-propyl ether, propylene glycol monoisopropyl ether, propylene glycol mono-n-butyl ether, propylene glycol monoisobutyl ether, propylene glycol mono Phenyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol mono-n-propyl ether, diethylene glycol monoisopropyl ether, diethylene glycol mono-n-butyl ether, diethylene glycol mono Glycol monoethers such as isobutyl ether, dipropylene glycol monomethyl ether, dipropylene glycol monoethyl ether, dipropylene glycol n-propyl ether, dipropylene glycol isopropyl ether, dipropylene glycol n-butyl ether, and dipropylene glycol isobutyl ether. Also, ethylene glycol monomethyl ether acetate, ethylene glycol monomethyl ether propionate, ethylene glycol monoethyl ether acetate, ethylene glycol mono-n-propyl ether acetate, ethylene glycol monomethyl ether acetate, Isopropyl ether acetate, ethylene glycol mono-n-butyl ether acetate, ethylene glycol mono-isobutyl ether acetate, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, propylene glycol mono-n-propyl ether Ester, propylene glycol monoisopropyl ether acetate, propylene glycol mono-n-butyl ether acetate, propylene glycol monoisobutyl ether acetate, diethylene glycol monomethyl ether acetate, diethylene glycol monoethyl ether acetate , diethylene glycol mono-n-propyl ether acetate, diethylene glycol mono-isopropyl ether acetate, diethylene glycol mono-n-butyl ether acetate, diethylene glycol mono-isobutyl ether acetate, two Propylene glycol monomethyl ether acetate, dipropylene glycol monoethyl ether acetate, dipropylene glycol mono-n-propyl ether acetate, dipropylene glycol monoisopropyl ether acetate, dipropylene glycol mono-n-butyl ether acetate, dipropylene glycol monoisopropyl ether Diol monoether acyl compounds such as butyl ether acetate.
作為上述酮系有機溶劑,可例舉:丙酮、甲基乙基酮、甲基正丙基酮、甲基異丙基酮、甲基正丁基酮、甲基異丁基酮、及環己酮等。Examples of the ketone-based organic solvent include acetone, methyl ethyl ketone, methyl n-propyl ketone, methyl isopropyl ketone, methyl n-butyl ketone, methyl isobutyl ketone, and cyclohexane Ketones etc.
作為上述酯系有機溶劑,可例舉:乙酸乙酯、乙酸正丙酯、乙酸異丙酯、乙酸正丁酯、乙酸異丁酯、乙酸正戊酯、乙酸異戊酯、丙酸甲酯、丙酸乙酯、乳酸甲酯、乳酸乙酯、及乳酸正丙酯等。Examples of the ester-based organic solvents include ethyl acetate, n-propyl acetate, isopropyl acetate, n-butyl acetate, isobutyl acetate, n-pentyl acetate, isopentyl acetate, methyl propionate, Ethyl propionate, methyl lactate, ethyl lactate, and n-propyl lactate, etc.
上述有機溶劑可單獨使用或組合兩種以上使用。 就上述矽氧烷聚合物之溶解性及塗布適性之方面而言,較佳為多元醇類之衍生物或酯系有機溶劑,更佳為丙二醇單甲醚、丙二醇單乙醚、丙二醇單正丙醚、丙二醇單異丙醚、丙二醇單正丁醚、丙二醇單異丁醚、丙二醇單甲醚乙酸酯、乙酸正丙酯、及乙酸異丙酯。 The above organic solvents can be used alone or in combination of two or more. In terms of the solubility and coating suitability of the aforementioned siloxane polymers, polyol derivatives or ester-based organic solvents are preferred, and propylene glycol monomethyl ether, propylene glycol monoethyl ether, and propylene glycol mono-n-propyl ether are more preferred. , propylene glycol monoisopropyl ether, propylene glycol mono-n-butyl ether, propylene glycol monoisobutyl ether, propylene glycol monomethyl ether acetate, n-propyl acetate, and isopropyl acetate.
(硬化劑) 本發明之皮膜形成用組成物含有硬化劑。 作為上述硬化劑,可例舉:芳香族胺硬化劑、酸酐、苯酚酚醛清漆樹脂聚矽氧系等硬化劑。 其中較佳為酸酐,例如可例舉:甲基四氫鄰苯二甲酸酐、甲基六氫鄰苯二甲酸酐、甲基耐地酸酐(methylnadic anhydride)、氫化甲基耐地酸酐(hydrogenated methylnadic anhydride)、三烷基四氫鄰苯二甲酸酐、四氫鄰苯二甲酸酐、六氫鄰苯二甲酸酐、十二烯基琥珀酸酐、及二苯甲酮四羧酸二酐等。 (hardener) The film-forming composition of the present invention contains a curing agent. Examples of the curing agent include aromatic amine curing agents, acid anhydrides, and phenol novolak resin polysiloxane-based curing agents. Among them, acid anhydrides are preferred, for example, methyl tetrahydrophthalic anhydride, methyl hexahydrophthalic anhydride, methylnadic anhydride (methylnadic anhydride), hydrogenated methylnadic anhydride (hydrogenated methylnadic anhydride) anhydride), trialkyl tetrahydrophthalic anhydride, tetrahydrophthalic anhydride, hexahydrophthalic anhydride, dodecenyl succinic anhydride, and benzophenone tetracarboxylic dianhydride, etc.
(光酸產生劑) 本發明之皮膜形成用組成物含有光酸產生劑。 作為上述光酸產生劑,可例舉:鎓鹽化合物、三氯甲基對稱三類、鋶鹽、錪鹽、四級銨鹽類、重氮甲烷化合物、醯亞胺基磺酸鹽化合物、及肟磺酸鹽化合物等。 (Photoacid Generator) The film-forming composition of the present invention contains a photoacid generator. Examples of the above-mentioned photoacid generators include onium salt compounds, trichloromethyl symmetrical tris Classes, perium salts, iodonium salts, quaternary ammonium salts, diazomethane compounds, imidosulfonate compounds, and oxime sulfonate compounds, etc.
(硬化觸媒) 本發明之皮膜形成用組成物含有硬化觸媒。 作為上述硬化觸媒,可例舉鋁、鋯、鈦等金屬之螯合化合物。 (hardening catalyst) The composition for film formation of this invention contains a hardening catalyst. As said hardening catalyst, the chelate compound of metals, such as aluminum, zirconium, and titanium, is mentioned.
(其他材料) 於不使本發明之效果降低之範圍內,本發明之皮膜形成用組成物可含有添加劑。 作為上述添加劑,例如可添加:碳化二亞胺系、異氰酸酯系、具有環氧基或硫醇基等交聯性官能基之交聯劑;氟系、聚矽氧系等界面活性劑;芳香族烴系、胺基化合物系、硝基化合物系、醌類、酮類等光敏劑;對苯二酚、對甲氧基苯酚(methoquinone)、受阻胺系、受阻酚系、二第三丁基對苯二酚、4-甲氧基苯酚、丁基羥基甲苯、亞硝胺鹽等聚合抑制劑;無機金屬氧化物、有機微粒子等填充劑等。 (Other materials) The composition for film formation of this invention may contain an additive within the range which does not reduce the effect of this invention. As the above-mentioned additives, for example, carbodiimide-based, isocyanate-based, cross-linking agents having cross-linkable functional groups such as epoxy groups or thiol groups; surfactants such as fluorine-based and polysiloxane-based surfactants; aromatic Hydrocarbons, amino compounds, nitro compounds, quinones, Photosensitizers such as ketones; hydroquinone, p-methoxyphenol (methoquinone), hindered amine series, hindered phenol series, di-tert-butylhydroquinone, 4-methoxyphenol, butylhydroxytoluene, Polymerization inhibitors such as nitrosamine salts; fillers such as inorganic metal oxides and organic microparticles, etc.
(皮膜形成用組成物中各材料之含量) 相對於上述矽氧烷聚合物100質量份,較佳為含有10~50質量份之上述具有兩個以上自由基聚合性不飽和雙鍵之光聚合性化合物。 若上述具有兩個以上自由基聚合性不飽和雙鍵之光聚合性化合物之含量相對於上述矽氧烷聚合物100質量份未達10質量份,則有硬化皮膜之硬化性或與基材或ITO電極之密接性變得不充分之情況,若相對於上述矽氧烷聚合物100質量份超過50質量份,則有未硬化之皮膜對於顯影液之溶解性變得不充分之情況。 (Content of each material in the film-forming composition) It is preferable to contain 10-50 mass parts of said photopolymerizable compound which has 2 or more radically polymerizable unsaturated double bonds with respect to 100 mass parts of said siloxane polymers. If the content of the above-mentioned photopolymerizable compound having two or more radically polymerizable unsaturated double bonds is less than 10 parts by mass relative to 100 parts by mass of the above-mentioned siloxane polymer, the hardening of the cured film or the substrate or Adhesiveness of the ITO electrode may become insufficient, and if it exceeds 50 parts by mass with respect to 100 parts by mass of the above-mentioned siloxane polymer, the solubility of the unhardened film to the developer may become insufficient.
於將上述矽氧烷聚合物與上述具有兩個以上自由基聚合性不飽和雙鍵之聚合性單體之合計量作為100質量份時,上述聚合起始劑較佳為含有0.5~40質量份。 若上述聚合起始劑之含量未達0.5質量份,則有光聚合性降低,於光微影法之曝光部殘存未反應成分之情況,若超過40質量份,則有皮膜形成用組成物之保存穩定性下降之可能性。 於將上述矽氧烷聚合物與上述具有兩個以上自由基聚合性不飽和雙鍵之聚合性單體之合計量作為100質量份時,上述聚合起始劑更佳為含有1~20質量份。 When the total amount of the above-mentioned siloxane polymer and the above-mentioned polymerizable monomer having two or more radically polymerizable unsaturated double bonds is taken as 100 parts by mass, the above-mentioned polymerization initiator preferably contains 0.5 to 40 parts by mass . If the content of the above-mentioned polymerization initiator is less than 0.5 parts by mass, the photopolymerizability may decrease, and unreacted components may remain in the exposed part of the photolithography method. If it exceeds 40 parts by mass, the film-forming composition may be damaged. Possibility of decreased storage stability. When the total amount of the above-mentioned siloxane polymer and the above-mentioned polymerizable monomer having two or more radically polymerizable unsaturated double bonds is 100 parts by mass, it is more preferable that the above-mentioned polymerization initiator contains 1 to 20 parts by mass .
相對於上述矽氧烷聚合物100質量份,上述硬化劑、光酸產生劑及硬化觸媒之含量分別為0.1質量份~10質量份左右。 又,作為上述添加劑之含量,例如相對於上述矽氧烷聚合物100質量份為0.1質量份~10質量份左右。 The contents of the curing agent, the photoacid generator, and the curing catalyst are each about 0.1 to 10 parts by mass relative to 100 parts by mass of the siloxane polymer. Moreover, as content of the said additive, it is about 0.1 mass part - 10 mass parts with respect to 100 mass parts of said siloxane polymers, for example.
(皮膜形成用組成物之製造方法) 作為本發明之皮膜形成用組成物之製造方法,可利用下述方法:於適當之容器內添加有機溶劑,例如一面利用高速攪拌機等進行攪拌,一面添加上述矽氧烷聚合物、上述具有兩個以上自由基聚合性不飽和雙鍵之光聚合性化合物、上述聚合起始劑、上述硬化劑、上述光酸產生劑、上述硬化觸媒及視需要而定之其他材料並進行混合。 再者,本發明之皮膜形成用組成物之製造方法並不限定於上述方法,添加各材料之順序可為任意。 又,若固體狀態之材料可溶於有機溶劑中,則可於添加前預先溶解,若可直接分散於有機溶劑中或利用分散劑等進行分散,則可於添加前預先進行分散。 (Manufacturing method of film-forming composition) As a method for producing the film-forming composition of the present invention, the following method can be used: adding an organic solvent to an appropriate container, for example, while stirring with a high-speed mixer, adding the above-mentioned siloxane polymer, the above-mentioned two The above-mentioned photopolymerizable compound with a radically polymerizable unsaturated double bond, the above-mentioned polymerization initiator, the above-mentioned curing agent, the above-mentioned photoacid generator, the above-mentioned curing catalyst, and other materials as necessary are mixed together. In addition, the manufacturing method of the composition for film formation of this invention is not limited to the said method, The order of adding each material may be arbitrary. Also, if the material in a solid state is soluble in an organic solvent, it may be predissolved before addition, and if it can be directly dispersed in an organic solvent or dispersed with a dispersant, it may be predistributed before addition.
(皮膜形成用組成物之物性) <顯影性> 本發明之皮膜形成用組成物之顯影性優異。 上述顯影性例如可藉由以下L/S顯影性試驗進行判斷。 (Physical properties of the film-forming composition) <Development> The film-forming composition of the present invention is excellent in developability. The above-mentioned developability can be judged by the following L/S developability test, for example.
利用(丙二醇單甲醚乙酸酯)稀釋皮膜形成用組成物,使不揮發成分之濃度達到45%,使用旋轉塗布機(MS-A100,Mikasa公司製造),於200 rpm、60秒之塗布條件下以使硬化皮膜之厚度達到10 μm之方式塗布於玻璃基板上。 其次,於80℃進行3分鐘加熱(預烤)處理後,使用安裝了刻有線與間隙之光罩之紫外線平行曝光裝置TPE-200SI(TECHNOPOST公司製造),於100 mJ/cm 2之照射條件下進行曝光處理,將一部分浸漬於用作顯影液之1%Na 2CO 3/1%Nonal水溶液中90秒後,利用離子交換水清洗,於150℃進行30分鐘加熱(後烘烤)處理,進行水洗、乾燥,製作皮膜形成用組成物之L/S顯影性評價用試片。 使用膜厚測定裝置(Alpha-Step IQ表面輪廓儀,KLM-Tencor公司製造)對該試片進行L/S評價。 The film-forming composition was diluted with (propylene glycol monomethyl ether acetate) so that the concentration of non-volatile components became 45%, and the coating conditions were 200 rpm and 60 seconds using a spin coater (MS-A100, manufactured by Mikasa Co., Ltd.) Then apply it on the glass substrate so that the thickness of the cured film becomes 10 μm. Next, after heating (pre-baking) at 80°C for 3 minutes, use an ultraviolet parallel exposure device TPE-200SI (manufactured by TECHNOPOST) equipped with a mask engraved with lines and spaces, under the irradiation condition of 100 mJ/cm 2 For exposure treatment, immerse a part in 1%Na 2 CO 3 /1%Nonal aqueous solution used as a developer for 90 seconds, wash with ion-exchanged water, and heat (post-bake) at 150°C for 30 minutes. After washing with water and drying, a test piece for evaluating the L/S developability of the film-forming composition was produced. The L/S evaluation of the test piece was performed using a film thickness measuring device (Alpha-Step IQ surface profiler, manufactured by KLM-Tencor).
於上述L/S顯影性試驗中,若L(線)及S(間隙)之雙方均為40 μm以下,則可判斷為顯影性優異。In the above-mentioned L/S developability test, when both L (line) and S (space) are 40 μm or less, it can be judged that the developability is excellent.
<硬化收縮> 本發明之皮膜形成用組成物可於硬化時抑制硬化收縮。 上述硬化收縮例如可藉由以下應力測定試驗來進行判斷。 <Hardening shrinkage> The film-forming composition of the present invention can suppress curing shrinkage during curing. The aforementioned curing shrinkage can be judged by, for example, the following stress measurement test.
利用(丙二醇單甲醚乙酸酯)稀釋皮膜形成用組成物,使不揮發成分之濃度達到45%,使用旋轉塗布機(MS-A100,Mikasa公司製造),於200 rpm、60秒之塗布條件下以使硬化皮膜之厚度達到10 μm之方式塗布於矽晶圓上。 其次,於80℃進行3分鐘加熱(預烤)處理後,於100 mJ/cm 2之照射條件下進行曝光處理,將一部分浸漬於用作顯影液之1%Na 2CO 3/1%Nonal水溶液中90秒後,於150℃進行30分鐘加熱(後烘烤)處理,進行水洗、乾燥,製作硬化皮膜之應力測定用試片。 使用薄膜應力測定裝置FLX-2320(Yamato Material公司製造)對該試片進行應力測定。 The film-forming composition was diluted with (propylene glycol monomethyl ether acetate) so that the concentration of non-volatile components became 45%, and the coating conditions were 200 rpm and 60 seconds using a spin coater (MS-A100, manufactured by Mikasa Co., Ltd.) Next, apply it on the silicon wafer in such a way that the thickness of the hardened film reaches 10 μm. Next, after heating (pre-baking) at 80°C for 3 minutes, exposure treatment was performed under the irradiation condition of 100 mJ/cm 2 , and a part was immersed in 1% Na 2 CO 3 /1% Nonal aqueous solution used as a developer. After soaking for 90 seconds, heat (post-bake) at 150°C for 30 minutes, wash with water, and dry to make a test piece for stress measurement of the hardened film. Stress measurement was performed on this test piece using a thin film stress measurement device FLX-2320 (manufactured by Yamato Material Co., Ltd.).
於上述應力測定試驗中,若應力未達10 mPa,則可判斷為能夠充分地抑制硬化收縮。In the above-mentioned stress measurement test, if the stress is less than 10 mPa, it can be judged that the hardening shrinkage can be sufficiently suppressed.
<硬度> 本發明之皮膜形成用組成物可形成硬度較高之硬化皮膜。 上述硬化皮膜之硬度例如可藉由以下鉛筆劃痕試驗來進行判斷。 <Hardness> The film-forming composition of the present invention can form a cured film with high hardness. The hardness of the said cured film can be judged by the following pencil scratch test, for example.
利用(丙二醇單甲醚乙酸酯)稀釋皮膜形成用組成物,使不揮發成分之濃度達到45%,使用旋轉塗布機(MS-A100,Mikasa公司製造),於200 rpm、60秒之塗布條件下以使硬化皮膜之厚度達到10 μm之方式塗布於玻璃基板上。 其次,於80℃進行3分鐘加熱(預烤)處理後,於100 mJ/cm 2之照射條件下進行曝光處理,將一部分浸漬於用作顯影液之1%Na 2CO 3/1%Nonal水溶液中90秒後,於150℃進行30分鐘加熱(後烘烤)處理,進行水洗、乾燥,製作硬化皮膜之硬度測定用試片。 依據JIS K 5600-5-4:1999對該試片進行鉛筆劃痕試驗(鉛筆硬度試驗)之評價。 The film-forming composition was diluted with (propylene glycol monomethyl ether acetate) so that the concentration of non-volatile components became 45%, and the coating conditions were 200 rpm and 60 seconds using a spin coater (MS-A100, manufactured by Mikasa Co., Ltd.) Then apply it on the glass substrate so that the thickness of the cured film becomes 10 μm. Next, after heating (pre-baking) at 80°C for 3 minutes, exposure treatment was performed under the irradiation condition of 100 mJ/cm 2 , and a part was immersed in 1% Na 2 CO 3 /1% Nonal aqueous solution used as a developer. After soaking for 90 seconds, heat (post-bake) at 150°C for 30 minutes, wash with water, and dry to make a test piece for measuring the hardness of the hardened film. The evaluation of the pencil scratch test (pencil hardness test) was performed on this test piece in accordance with JIS K 5600-5-4:1999.
於上述鉛筆劃痕試驗中,若硬度為4H以上,則可判斷為具有充分之硬度。In the above-mentioned pencil scratch test, if the hardness is 4H or more, it can be judged to have sufficient hardness.
(硬化皮膜之形成方法) 作為使用本發明之皮膜形成用組成物來形成硬化皮膜之方法,較佳為具有下述步驟:塗布步驟,將上述皮膜形成用組成物塗布於基材;曝光步驟,對曝光部照射活性能量線,形成硬化皮膜;及顯影步驟,利用顯影液將未曝光部之塗布液溶解去除。 此種硬化皮膜之形成方法亦係本發明之一態樣。 (How to form hardened film) The method of forming a cured film using the film-forming composition of the present invention preferably includes the following steps: a coating step of applying the above-mentioned film-forming composition to a substrate; an exposure step of irradiating the exposed portion with active energy rays , forming a hardened film; and a developing step, using a developing solution to dissolve and remove the coating solution on the unexposed portion. The method for forming such a cured film is also an aspect of the present invention.
上述塗布步驟中之塗布方法、上述曝光步驟中之對曝光部照射之活性能量線及其照射方法、及去除曝光部之塗布液之顯影液可適當選擇習知之光微影法中使用者及方法。 例如,可稀釋皮膜形成用組成物,使不揮發成分之濃度達到45%,使用旋轉塗布機進行塗布,於80℃、3分鐘等條件下進行加熱(預烤)處理後,使用光罩對準曝光機,於100 mJ/cm 2之照射條件下對測試圖案進行曝光處理,於顯影液中浸漬1分鐘後,於150℃、30分鐘等條件進行加熱(後烘烤)處理,藉此得到硬化皮膜。 The coating method in the above-mentioned coating step, the active energy ray irradiated to the exposed part and its irradiation method in the above-mentioned exposure step, and the developer for removing the coating solution of the exposed part can be appropriately selected from the known photolithography method. . For example, the film-forming composition can be diluted so that the concentration of non-volatile components reaches 45%, coated with a spin coater, heated (pre-baked) at 80°C for 3 minutes, and aligned using a photomask Exposure machine, under the irradiation condition of 100 mJ/ cm2 , the test pattern is exposed, immersed in the developer solution for 1 minute, and then heated (post-baked) at 150°C for 30 minutes to obtain hardening film.
作為上述預烤之條件,較佳為於80~100℃進行1~3分鐘處理。 作為上述照射條件,較佳為20~120 mJ/cm 2。 作為上述後烘烤之條件,較佳為於120~180℃、30~60分鐘之條件下進行處理。 As the conditions for the above-mentioned pre-baking, it is preferable to perform the treatment at 80-100° C. for 1-3 minutes. The irradiation conditions are preferably 20 to 120 mJ/cm 2 . As the conditions of the above-mentioned post-baking, it is preferable to process under the conditions of 120-180 degreeC and 30-60 minutes.
又,作為上述基材,只要具有透光性,則無限定,可適當使用作為觸控面板或指紋認證感測器中使用之玻璃基材、塑膠基材而習知公知者,亦可為於表面形成有透明電極之基材。 再者,於在表面具有透明電極之情形時,較佳為於形成有透明電極之面上形成本發明之皮膜形成用組成物之硬化皮膜。 以於上述基材上具有本發明之皮膜形成用組成物之硬化皮膜為特徵的積層體亦係本發明之一態樣。 又,上述積層體可良好地用作指紋認證感測器,使用上述積層體而成之指紋認證感測器亦係本發明之一態樣。 [實施例] In addition, as the above-mentioned substrate, as long as it has light transmittance, it is not limited, and conventionally known ones such as glass substrates and plastic substrates used in touch panels or fingerprint authentication sensors can be used appropriately, and can also be used in A substrate with transparent electrodes formed on its surface. Furthermore, in the case of having a transparent electrode on the surface, it is preferable to form a cured film of the film-forming composition of the present invention on the surface on which the transparent electrode is formed. A laminate characterized by having a cured film of the film-forming composition of the present invention on the aforementioned substrate is also an aspect of the present invention. Moreover, the above-mentioned laminate can be favorably used as a fingerprint authentication sensor, and a fingerprint authentication sensor using the above-mentioned laminate is also an aspect of the present invention. [Example]
以下,揭示實施例進而詳細地對本發明進行說明,但本發明並不僅限定於該等實施例。再者,若無特別說明,「%」意為「質量%」,「份」意為「質量份」。Hereinafter, although an Example is disclosed and this invention is demonstrated in detail, this invention is not limited only to these Examples. In addition, unless otherwise specified, "%" means "mass %", and "part" means "mass part".
<矽烷系化合物(A)之製作> 於200 ml之三口燒瓶中放入胺基丙基三乙氧基矽烷20.00 g,一面藉由水浴進行冷卻,一面加入琥珀酸酐粉末9.04 g,於室溫進行20分鐘攪拌。其後,將所得之粗產物濃縮,得到上述化學式(1)所表示之化合物。將其用於後述之矽氧烷聚合物之合成。 <Production of silane compound (A)> Put 20.00 g of aminopropyltriethoxysilane into a 200 ml three-necked flask, and while cooling in a water bath, add 9.04 g of succinic anhydride powder, and stir at room temperature for 20 minutes. Thereafter, the obtained crude product is concentrated to obtain the compound represented by the above chemical formula (1). This was used for the synthesis of the siloxane polymer described later.
矽氧烷聚合物之合成中使用了以下材料。 <矽烷系化合物(B)> 3-甲基丙烯醯氧基丙基三甲氧基矽烷(東京化成工業公司製造) <矽烷系化合物(C)> 2-(3,4-環氧基環己基)乙基三甲氧基矽烷(東京化成工業公司製造) 3-環氧丙氧基丙基三甲氧基矽烷(東京化成工業公司製造) <矽烷系化合物(D)> 四乙氧基矽烷(東京化成工業公司製造) <矽烷系化合物(E)> 苯基三甲氧基矽烷(東京化成工業公司製造) 甲基三乙氧基矽烷(東京化成工業公司製造) The following materials were used in the synthesis of the silicone polymer. <Silane compound (B)> 3-Methacryloxypropyltrimethoxysilane (manufactured by Tokyo Chemical Industry Co., Ltd.) <Silane compound (C)> 2-(3,4-Epoxycyclohexyl)ethyltrimethoxysilane (manufactured by Tokyo Chemical Industry Co., Ltd.) 3-Glycidoxypropyltrimethoxysilane (manufactured by Tokyo Chemical Industry Co., Ltd.) <Silane compound (D)> Tetraethoxysilane (manufactured by Tokyo Chemical Industry Co., Ltd.) <Silane compound (E)> Phenyltrimethoxysilane (manufactured by Tokyo Chemical Industry Co., Ltd.) Methyltriethoxysilane (manufactured by Tokyo Chemical Industry Co., Ltd.)
(矽氧烷聚合物之合成) 於安裝有攪拌裝置、回流冷卻器、溫度計及滴液漏斗之反應容器中,將矽烷系化合物(A)之粗產物、及表1中記載之摻合比之各材料溶解於丙酮中,製成均勻之溶液。 於其中滴加水及硝酸,一面進行回流一面進行60分鐘混合後,將所得之反應溶液冷卻至室溫。 其後,於反應溶液中加入丙二醇單甲醚乙酸酯20.00 g,將作為反應副生物之乙醇、水、鹽酸減壓蒸餾去除,得到水解縮合物溶液。 其後,於水解縮合物溶液中加入丙二醇二乙醚,得到矽氧烷聚合物1~13之固形物成分濃度為45質量%之水解縮合物溶液。 再者,按照本說明書中記載之條件對上述矽氧烷聚合物1~13之重量平均分子量(Mw)進行測定,均處於1000~1萬之範圍內。 (Synthesis of siloxane polymers) In a reaction vessel equipped with a stirring device, a reflux cooler, a thermometer and a dropping funnel, dissolve the crude product of the silane compound (A) and the materials in the blending ratios listed in Table 1 in acetone to prepare homogeneous solution. Water and nitric acid were added dropwise thereto, and after mixing for 60 minutes while refluxing, the obtained reaction solution was cooled to room temperature. Thereafter, 20.00 g of propylene glycol monomethyl ether acetate was added to the reaction solution, and ethanol, water, and hydrochloric acid, which were reaction by-products, were distilled off under reduced pressure to obtain a hydrolysis-condensation product solution. Then, propylene glycol diethyl ether was added to the hydrolysis-condensation product solution, and the hydrolysis-condensation product solution whose solid content concentration of siloxane polymers 1-13 was 45 mass % was obtained. Furthermore, the weight average molecular weights (Mw) of the above-mentioned siloxane polymers 1 to 13 were measured according to the conditions described in this specification, and all of them were in the range of 1,000 to 10,000.
[表1]
(實施例1~9、比較例1~10之皮膜形成用組成物之製作) 於具備高速攪拌裝置之容器內,加入聚矽氧烷系化合物1~13之水解縮合物溶液及表2及3中記載之摻合比之各材料並進行攪拌,製作皮膜形成用組成物。 (Production of film-forming compositions of Examples 1-9 and Comparative Examples 1-10) In a container equipped with a high-speed stirring device, the hydrolyzed condensate solutions of polysiloxane-based compounds 1 to 13 and the materials in the blending ratios listed in Tables 2 and 3 were added and stirred to prepare a film-forming composition.
實施例及比較例之皮膜形成用組成物之製作中使用了以下材料。 <具有兩個以上自由基聚合性不飽和雙鍵之光聚合性化合物> 三(2-羥基乙基)異三聚氰酸三丙烯酸酯(記為THITA,東京化成工業公司製造) 二新戊四醇六丙烯酸酯(記為DPHA,東京化成工業公司製造) <硬化劑> 六氫鄰苯二甲酸酐(新日本理化公司製造) <交聯劑> Karenz MT PE-1(硫醇系交聯劑,SHOWA DENKO Karenz公司製造) <聚合起始劑> 雙(2,4,6-三甲基苯甲醯基)-苯基氧化膦(記為Omnirad819,IGM Resins B.V.公司製造) <光酸產生劑> CPI-100P(三洋化成工業公司製造) <硬化觸媒> K-KAT5218(鋁系硬化觸媒,楠本化成公司製造) ZC-700(鋯系硬化觸媒,Matsumoto Fine Chemical公司製造) <其他材料> BYK-307(聚矽氧系界面活性劑,BYK股份有限公司製造) The following materials were used in the production of the film-forming compositions of Examples and Comparative Examples. <Photopolymerizable compounds having two or more radically polymerizable unsaturated double bonds> Tris(2-hydroxyethyl)isocyanuric acid triacrylate (referred to as THITA, manufactured by Tokyo Chemical Industry Co., Ltd.) Dineopenylthritol hexaacrylate (referred to as DPHA, manufactured by Tokyo Chemical Industry Co., Ltd.) <Hardener> Hexahydrophthalic anhydride (manufactured by Nippon Chemical Co., Ltd.) <Crosslinking agent> Karenz MT PE-1 (thiol-based crosslinking agent, manufactured by SHOWA DENKO Karenz Co., Ltd.) <Polymerization initiator> Bis(2,4,6-trimethylbenzoyl)-phenylphosphine oxide (referred to as Omnirad819, manufactured by IGM Resins B.V.) <Photoacid generator> CPI-100P (manufactured by Sanyo Chemical Industry Co., Ltd.) <Hardening catalyst> K-KAT5218 (aluminum-based hardening catalyst, manufactured by Kusumoto Kasei Co., Ltd.) ZC-700 (zirconium-based hardening catalyst, manufactured by Matsumoto Fine Chemical Co., Ltd.) <Other materials> BYK-307 (polysiloxane-based surfactant, manufactured by BYK Co., Ltd.)
<L/S顯影性試驗> 利用(丙二醇單甲醚乙酸酯)稀釋實施例、比較例各自之皮膜形成用組成物,使不揮發成分之濃度達到45%,使用旋轉塗布機(MS-A100,Mikasa公司製造),於200 rpm、60秒之塗布條件下以使硬化皮膜之厚度達到10 μm之方式塗布於玻璃基板上。 其次,於80℃進行3分鐘加熱(預烤)處理後,使用安裝了刻有線與間隙之光罩之紫外線平行曝光裝置TPE-200SI(TECHNOPOST公司製造),於100 mJ/cm 2之照射條件下進行曝光處理,將一部分浸漬於用作顯影液之1%Na 2CO 3/1%Nonal水溶液中90秒後,利用離子交換水清洗,於150℃進行30分鐘加熱(後烘烤)處理,進行水洗、乾燥,製作皮膜形成用組成物之L/S顯影性評價用試片。 使用膜厚測定裝置(Alpha-Step IQ表面輪廓儀,KLM-Tencor公司製造)對該試片進行L/S評價。將其結果示於表2及3。 再者,於L/S顯影性試驗中,將L(線)及S(間隙)之雙方均為40 μm以下者判斷為顯影性優異。對於比較例5之皮膜形成用組成物,由於不溶於顯影液,無法進行圖案化,故評價記為「-」。 <L/S Developability Test> The film-forming compositions of Examples and Comparative Examples were diluted with (propylene glycol monomethyl ether acetate) so that the concentration of non-volatile components reached 45%, and a spin coater (MS-A100 , manufactured by Mikasa Corporation), and coated on the glass substrate under the coating conditions of 200 rpm and 60 seconds so that the thickness of the hardened film reaches 10 μm. Next, after heating (pre-baking) at 80°C for 3 minutes, use an ultraviolet parallel exposure device TPE-200SI (manufactured by TECHNOPOST) equipped with a mask engraved with lines and spaces, under the irradiation condition of 100 mJ/cm 2 For exposure treatment, immerse a part in 1%Na 2 CO 3 /1%Nonal aqueous solution used as a developer for 90 seconds, wash with ion-exchanged water, and heat (post-bake) at 150°C for 30 minutes. After washing with water and drying, a test piece for evaluating the L/S developability of the film-forming composition was produced. The L/S evaluation of the test piece was performed using a film thickness measuring device (Alpha-Step IQ surface profiler, manufactured by KLM-Tencor). The results are shown in Tables 2 and 3. In addition, in the L/S developability test, when both L (line) and S (space) are 40 micrometers or less, it was judged that it was excellent in developability. The film-forming composition of Comparative Example 5 was evaluated as "-" because it was insoluble in the developer and could not be patterned.
<應力測定試驗> 利用(丙二醇單甲醚乙酸酯)稀釋實施例、比較例各者之皮膜形成用組成物,使不揮發成分之濃度達到45%,使用旋轉塗布機(MS-A100,Mikasa公司製造),於200 rpm、60秒之塗布條件下以使硬化皮膜之厚度達到10 μm之方式塗布於矽晶圓上。 其次,於80℃進行3分鐘加熱(預烤)處理後,於100 mJ/cm 2之照射條件下進行曝光處理,將一部分浸漬於用作顯影液之1%Na 2CO 3/1%Nonal水溶液中90秒後,於150℃進行30分鐘加熱(後烘烤)處理,進行水洗、乾燥,製作硬化皮膜之應力測定用試片。 使用薄膜應力測定裝置FLX-2320(Yamato Material公司製造)對該試片進行應力測定,按照以下基準進行評價。將其結果示於表2及3。 (評價基準) 〇:應力未達10 mPa ×:應力為10 mPa以上 <Stress measurement test> Dilute the film-forming compositions of Examples and Comparative Examples with (propylene glycol monomethyl ether acetate) so that the concentration of non-volatile components becomes 45%, and use a spin coater (MS-A100, Mikasa Manufactured by the company), and coated on the silicon wafer under the coating conditions of 200 rpm and 60 seconds so that the thickness of the hardened film reaches 10 μm. Next, after heating (pre-baking) at 80°C for 3 minutes, exposure treatment was performed under the irradiation condition of 100 mJ/cm 2 , and a part was immersed in 1% Na 2 CO 3 /1% Nonal aqueous solution used as a developer. After soaking for 90 seconds, heat (post-bake) at 150°C for 30 minutes, wash with water, and dry to make a test piece for stress measurement of the hardened film. The test piece was subjected to stress measurement using a thin film stress measurement device FLX-2320 (manufactured by Yamato Material Co., Ltd.), and evaluated according to the following criteria. The results are shown in Tables 2 and 3. (Evaluation criteria) 〇: The stress is less than 10 mPa ×: The stress is more than 10 mPa
<鉛筆硬度試驗> 利用(丙二醇單甲醚乙酸酯)稀釋實施例、比較例各者之皮膜形成用組成物,使不揮發成分之濃度達到45%,使用旋轉塗布機(MS-A100,Mikasa公司製造),於200 rpm、60秒之塗布條件下以使硬化皮膜之厚度達到10 μm之方式塗布於玻璃基板上。 其次,於80℃進行3分鐘加熱(預烤)處理後,於100 mJ/cm 2之照射條件下進行曝光處理,將一部分浸漬於用作顯影液之1%Na 2CO 3/1%Nonal水溶液中90秒後,於150℃進行30分鐘加熱(後烘烤)處理,進行水洗、乾燥,製作硬化皮膜之硬度測定用試片。 依據JIS K 5600-5-4:1999對試片進行鉛筆劃痕試驗(pencil scratch test) (鉛筆硬度試驗)之評價。將其結果示於表2及3。 再者,將鉛筆硬度試驗中硬度為4H以上者判斷為具有充分之硬度。 <Pencil Hardness Test> Dilute the film-forming compositions of Examples and Comparative Examples with (propylene glycol monomethyl ether acetate) so that the concentration of non-volatile components becomes 45%, and use a spin coater (MS-A100, Mikasa Co., Ltd.) was coated on the glass substrate under the coating conditions of 200 rpm and 60 seconds so that the thickness of the hardened film reached 10 μm. Next, after heating (pre-baking) at 80°C for 3 minutes, exposure treatment was performed under the irradiation condition of 100 mJ/cm 2 , and a part was immersed in 1% Na 2 CO 3 /1% Nonal aqueous solution used as a developer. After soaking for 90 seconds, heat (post-bake) at 150°C for 30 minutes, wash with water, and dry to make a test piece for measuring the hardness of the hardened film. The test pieces were evaluated by a pencil scratch test (pencil hardness test) in accordance with JIS K 5600-5-4:1999. The results are shown in Tables 2 and 3. In addition, those whose hardness was 4H or more in the pencil hardness test were judged as having sufficient hardness.
[表2]
[表3]
於本發明之皮膜形成用組成物之實施例1~9中,確認到即便硬化皮膜之膜厚為10 μm,顯影性亦優異,並且能夠抑制硬化收縮,能夠形成硬度較高之硬化皮膜。 尤其是以規定之莫耳比含有矽烷化合物(D)及矽烷系化合物(E)之實施例4及5於顯影性方面極為優異。 [產業上之可利用性] In Examples 1 to 9 of the film-forming composition of the present invention, it was confirmed that even when the film thickness of the cured film was 10 μm, the developability was excellent, shrinkage on curing was suppressed, and a cured film with high hardness could be formed. In particular, Examples 4 and 5 containing the silane compound (D) and the silane-based compound (E) at a predetermined molar ratio were extremely excellent in developability. [Industrial availability]
本發明之皮膜形成用組成物即增加硬化皮膜之膜厚,顯影性亦優異,並且能夠抑制硬化收縮,能夠形成硬度較高之硬化皮膜,因此可良好地用作塗布於觸控面板等透光性基板上之絕緣性皮膜。The film-forming composition of the present invention increases the film thickness of the cured film, has excellent developability, and can suppress curing shrinkage, and can form a cured film with high hardness, so it can be well used as a light-transmitting coating on touch panels and the like. Insulating film on a permanent substrate.
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