TW202243783A - Integrated laser and microwave annealing system and annealing method - Google Patents

Integrated laser and microwave annealing system and annealing method Download PDF

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TW202243783A
TW202243783A TW111117039A TW111117039A TW202243783A TW 202243783 A TW202243783 A TW 202243783A TW 111117039 A TW111117039 A TW 111117039A TW 111117039 A TW111117039 A TW 111117039A TW 202243783 A TW202243783 A TW 202243783A
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microwave
laser
source system
energy
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TWI843100B (en
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寇崇善
葉文勇
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日揚科技股份有限公司
明遠精密科技股份有限公司
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Priority to CN202210511315.7A priority Critical patent/CN115346891A/en
Priority to US17/742,446 priority patent/US11889609B2/en
Priority to JP2022078914A priority patent/JP7402917B2/en
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Abstract

An integrated laser and microwave annealing system and an annealing method are disclosed. The annealing system comprises a microwave power source system, a laser heating source system, and a measurement and control system. The microwave power source system provides a first microwave energy to a first region of an object to be annealed, so as to anneal the first region of the object. The laser heating source system provides a laser energy to a second area of the object to be annealed, so as to anneal the second area of the object. A measurement and control system is provided to monitor and control the microwave and/or laser power. The invention can reduce the required overall annealing time, and can avoid cracks or defects due to large stress difference.

Description

整合雷射與微波的退火系統及退火方法Annealing system and annealing method integrating laser and microwave

本發明是有關於一種退火系統及退火方法,特別是有關於一種整合雷射與微波的退火系統及退火方法。The present invention relates to an annealing system and an annealing method, in particular to an annealing system and an annealing method integrating laser and microwave.

微波退火雖然能夠提供較快速加熱及冷卻速度,然而微波共振腔之加熱速度之極限為攝氏200度/分,且不適合用來退火較大尺寸之晶圓,更不適合用於匹量式加工。目前雖然有技術採用雷射退火,然而雷射退火能量過度集中於雷射光點,容易產生注入離子過度擴散的問題,且受限於雷射光點面積,無法均勻加熱待退火物,導致其聚焦點與非聚焦點間的溫度差過大,容易產生應力以及產生裂縫或缺陷。Although microwave annealing can provide faster heating and cooling rates, the limit of the heating rate of the microwave resonant cavity is 200 degrees Celsius per minute, and it is not suitable for annealing large-sized wafers, let alone mass processing. At present, although laser annealing technology is used, the energy of laser annealing is excessively concentrated on the laser spot, which is prone to the problem of excessive diffusion of implanted ions, and is limited by the area of the laser spot, which makes it impossible to uniformly heat the object to be annealed, resulting in its focal point Excessive temperature difference from the non-focus point can easily cause stress and cracks or defects.

有鑑於此,本發明之一目的就是在提供一種整合雷射與微波的退火系統與退火方法,以解決上述習知技藝之問題。In view of this, an object of the present invention is to provide an annealing system and an annealing method integrating laser and microwave, so as to solve the above-mentioned problems in the prior art.

為達前述目的,本發明提出一種整合雷射與微波的退火系統,包含:一微波功率源系統,該微波功率源系統係提供一微波能量予一待退火物之一第一區域,藉以退火該待退火物之該第一區域;一雷射加熱源系統,該雷射加熱源系統係提供一雷射能量予該待退火物之一第二區域,藉以退火該待退火物之該第二區域;以及一測控系統,該測控系統係包含一測溫裝置、一功率量測裝置及一控制裝置,該測溫裝置係監測該待退火物之一溫度值,該功率量測裝置係量測該微波功率源系統提供該微波能量及該雷射加熱源系統提供該雷射能量之至少一者之一功率變化,其中該控制裝置係依據該溫度值及該功率變化對應地調整該微波功率源系統提供該微波能量之一第一功率及/或調整該雷射加熱源系統提供該雷射能量之一第二功率。In order to achieve the aforementioned purpose, the present invention proposes an annealing system integrating laser and microwave, including: a microwave power source system, which provides a microwave energy to a first region of an object to be annealed, so as to anneal the The first region of the object to be annealed; a laser heating source system that provides a laser energy to a second region of the object to be annealed, thereby annealing the second region of the object to be annealed ; and a measurement and control system, the measurement and control system includes a temperature measurement device, a power measurement device and a control device, the temperature measurement device is to monitor a temperature value of the object to be annealed, the power measurement device is to measure the A power change of at least one of the microwave power source system providing the microwave energy and the laser heating source system providing the laser energy, wherein the control device adjusts the microwave power source system correspondingly according to the temperature value and the power change Providing a first power of the microwave energy and/or adjusting the laser heating source system to provide a second power of the laser energy.

其中,該第一區域係包含該第二區域。Wherein, the first area includes the second area.

其中,該微波功率源系統係整體式提供該微波能量予該待退火物之該第一區域,該雷射加熱源系統係掃描式提供該雷射能量予該待退火物之該第二區域。Wherein, the microwave power source system provides the microwave energy to the first region of the object to be annealed integrally, and the laser heating source system provides the laser energy to the second region of the object to be annealed in a scanning manner.

其中,該微波功率源系統提供該微波能量予該第一區域之一第一時間區間係涵蓋該雷射加熱源系統提供該雷射能量予該第二區域之一第二時間區間。Wherein, a first time period in which the microwave power source system provides the microwave energy to the first region covers a second time period in which the laser heating source system provides the laser energy to the second region.

其中,該雷射加熱源系統提供該雷射能量予該第二區域之一第二時間區間係涵蓋該微波功率源系統提供該微波能量予該第一區域之一第一時間區間。Wherein, the second time interval of the laser heating source system providing the laser energy to the second area covers the first time interval of the microwave power source system providing the microwave energy to the first area.

其中,該微波功率源系統所提供之該微波能量係沿著一第一軸向提供予該第一區域,該雷射加熱源系統所提供之該雷射能量係沿著一第二軸向提供予該第二區域,該第一軸向與該第二軸向之夾角之範圍為0度至180度。Wherein, the microwave energy provided by the microwave power source system is provided to the first region along a first axis, and the laser energy provided by the laser heating source system is provided along a second axis For the second region, the included angle between the first axis and the second axis ranges from 0° to 180°.

其中,該雷射加熱源系統包含一雷射產生器及一透鏡組,該雷射產生器係產生一雷射,該透鏡組係將該雷射導引至該待退火物之該第二區域上。Wherein, the laser heating source system includes a laser generator and a lens group, the laser generator generates a laser, and the lens group guides the laser to the second area of the object to be annealed superior.

其中,該微波功率源系統包含至少一微波產生器及一共振腔,該微波產生器係產生一微波,且該共振腔係將該微波導引至該待退火物之該第一區域上。Wherein, the microwave power source system includes at least one microwave generator and a resonant cavity, the microwave generator generates a microwave, and the resonant cavity guides the microwave to the first region of the object to be annealed.

其中,該微波功率源系統與該雷射加熱源系統係從該待退火物之相對側分別提供該微波能量與該雷射能量。Wherein, the microwave power source system and the laser heating source system respectively provide the microwave energy and the laser energy from opposite sides of the object to be annealed.

其中,該微波功率源系統與該雷射加熱源系統係由該待退火物之同一側分別提供該微波能量與該雷射能量。Wherein, the microwave power source system and the laser heating source system respectively provide the microwave energy and the laser energy from the same side of the object to be annealed.

其中,該雷射加熱源系統之該透鏡組係同軸式設於該微波功率源系統之該共振腔上,藉以將該雷射導引至該待退火物之該第二區域上。Wherein, the lens group of the laser heating source system is coaxially arranged on the resonant cavity of the microwave power source system, so as to guide the laser to the second region of the object to be annealed.

其中,該微波功率源系統與該雷射加熱源系統係從該待退火物之垂直側分別提供該微波能量與該雷射能量予該待退火物。Wherein, the microwave power source system and the laser heating source system respectively provide the microwave energy and the laser energy to the object to be annealed from the vertical side of the object to be annealed.

其中,該微波功率源系統包含兩微波產生器及一共振腔,該兩微波產生器係產生兩微波,該共振腔係從該第一軸向之兩相對方向分別將該兩微波導引至該待退火物之該第一區域上。Wherein, the microwave power source system includes two microwave generators and a resonant cavity, the two microwave generators generate two microwaves, and the resonant cavity guides the two microwaves to the on the first region of the object to be annealed.

其中,更包含一微波吸收元件,該微波吸收元件與該微波功率源系統係位於該待退火物之相對側。Wherein, a microwave absorbing element is further included, and the microwave absorbing element and the microwave power source system are located on opposite sides of the object to be annealed.

其中,該微波功率源系統之該共振腔貫穿有一開口,該待退火物係藉由該開口於該共振腔中移動位置以接收該微波能量。Wherein, the resonance cavity of the microwave power source system runs through an opening, and the object to be annealed moves in the resonance cavity through the opening to receive the microwave energy.

其中,該功率量測裝置係量測該微波功率源系統以一微波提供該微波能量及該雷射加熱源系統以一雷射提供該雷射能量之該至少一者之一前進訊號及/或一反射訊號,藉以獲得該功率變化。Wherein, the power measurement device measures a forward signal and/or of at least one of the microwave power source system providing the microwave energy with a microwave and the laser heating source system providing the laser energy with a laser A reflected signal is used to obtain the power change.

其中,該功率量測裝置包含量測該微波功率源系統以一微波提供該微波能量之一前進訊號及一反射訊號之至少一者以及該雷射加熱源系統以一雷射提供該雷射能量之一前進訊號及一反射訊號之至少一者。Wherein, the power measuring device includes measuring at least one of the forward signal and a reflected signal of the microwave energy provided by the microwave power source system and the laser heating source system provided by a laser. at least one of a forward signal and a reflected signal.

其中,該微波功率源系統還包含一隔離器及一匹配器設於該微波產生器及該共振腔之間。Wherein, the microwave power source system also includes an isolator and a matching device arranged between the microwave generator and the resonant cavity.

其中,該第一區域或該第二區域係位於該待退火物之一深度中或一表面上。Wherein, the first region or the second region is located in a depth or on a surface of the object to be annealed.

為達前述目的,本發明提出一種整合雷射與微波的退火方法,包含:進行一微波退火程序,藉以利用一微波功率源系統以一微波能量退火一待退火物之一第一區域;進行一雷射退火程序,藉以利用一雷射加熱源系統以一雷射提供一雷射能量予於該待退火物之一第二區域;以及進行一測控程序,其係量測並依據該待退火物之一溫度值、該微波功率源系統提供該微波能量及該雷射加熱源系統提供該雷射能量之至少一者之一功率變化,藉以對應地調整該微波功率源系統提供該微波能量之一第一功率及/或該雷射加熱源系統提供該雷射能量之一第二功率。In order to achieve the aforementioned purpose, the present invention proposes an annealing method integrating laser and microwave, comprising: performing a microwave annealing procedure, thereby utilizing a microwave power source system to anneal a first region of an object to be annealed with a microwave energy; performing a A laser annealing process, whereby a laser heating source system is used to provide a laser energy to a second area of the object to be annealed; A temperature value, a power change of at least one of the microwave energy provided by the microwave power source system and the laser energy provided by the laser heating source system, so as to adjust the microwave power source system to provide one of the microwave energy accordingly The first power and/or the laser heating source system provides a second power of the laser energy.

其中,該第一區域係包含該第二區域。Wherein, the first area includes the second area.

其中,該微波功率源系統係整體式提供該微波能量予該待退火物之該第一區域,該雷射加熱源系統係掃描式提供該雷射能量予該待退火物之該第二區域。Wherein, the microwave power source system provides the microwave energy to the first region of the object to be annealed integrally, and the laser heating source system provides the laser energy to the second region of the object to be annealed in a scanning manner.

其中,該微波功率源系統提供該微波能量予該第一區域之一第一時間區間係涵蓋該雷射加熱源系統提供該雷射能量予該第二區域之一第二時間區間。Wherein, a first time period in which the microwave power source system provides the microwave energy to the first region covers a second time period in which the laser heating source system provides the laser energy to the second region.

其中,該雷射加熱源系統提供該雷射能量予該第二區域之一第二時間區間係涵蓋該微波功率源系統提供該微波能量予該第一區域之一第一時間區間。Wherein, the second time interval of the laser heating source system providing the laser energy to the second area covers the first time interval of the microwave power source system providing the microwave energy to the first area.

其中,該微波功率源系統係沿著一第一軸向提供該微波能量予該第一區域,該雷射加熱源系統係沿著一第二軸向提供該雷射能量予該第二區域,該第一軸向與該第二軸向之夾角之範圍為0度至180度。Wherein, the microwave power source system provides the microwave energy to the first region along a first axis, and the laser heating source system provides the laser energy to the second region along a second axis, The included angle between the first axis and the second axis ranges from 0° to 180°.

其中,該微波功率源系統係從該第一軸向之兩相對方向提供該微波能量予該第一區域。Wherein, the microwave power source system provides the microwave energy to the first region from two opposite directions of the first axis.

承上所述,本發明之整合雷射與微波的退火系統及退火方法,具有以下優點:Based on the above, the integrated laser and microwave annealing system and annealing method of the present invention have the following advantages:

(1) 本發明以微波能量及雷射能量進行協同式退火程序,有助於結合微波退火及雷射退火之優點。(1) The present invention uses microwave energy and laser energy to carry out a synergistic annealing procedure, which helps to combine the advantages of microwave annealing and laser annealing.

(2) 藉由微波能量升高退火物之溫度,有助於增加待退火物的雷射能量吸收率,故可降低進行雷射退火程序所需提供之雷射能量,或是可以減少整體退火所需時間。(2) Using microwave energy to increase the temperature of the annealed object helps to increase the laser energy absorption rate of the annealed object, so it can reduce the laser energy required for the laser annealing process, or reduce the overall annealing time required.

(3) 藉由微波能量升高待退火物之第二區域與其他區域(非第二區域)之溫度,可降低此兩區域的溫度差(Thermal Shock),以避免應力差異大而產生裂縫或缺陷。(3) By using microwave energy to increase the temperature of the second area and other areas (not the second area) of the object to be annealed, the temperature difference between the two areas (Thermal Shock) can be reduced to avoid cracks or cracks caused by large stress differences. defect.

(4) 本發明以微波能量對待退火物整體作退火,可避免溫度梯度大而產生缺陷,還能解決注入離子過度擴散的問題。(4) The present invention uses microwave energy to anneal the whole object to be annealed, which can avoid defects caused by large temperature gradients, and can also solve the problem of excessive diffusion of implanted ions.

(5) 本發明以微波能量對待退火物整體作退火,並選擇特定的雷射波長對應退火目標,可選擇性對特定深度的區域做雷射退火。(5) The present invention uses microwave energy to anneal the entire object to be annealed, and selects a specific laser wavelength corresponding to the annealing target, and can selectively perform laser annealing on a specific depth area.

茲為使鈞審對本發明的技術特徵及所能達到的技術功效有更進一步的瞭解與認識,謹佐以較佳的實施例及配合詳細的說明如後。Herein, in order to make Jun Shen have a further understanding and understanding of the technical characteristics of the present invention and the technical effects that can be achieved, the preferred embodiment and detailed description are as follows.

為利瞭解本創作之技術特徵、內容與優點及其所能達成之功效,茲將本創作配合圖式,並以實施例之表達形式詳細說明如下,而其中所使用之圖式,其主旨僅為示意及輔助說明書之用,未必為本創作實施後之真實比例與精準配置,故不應就所附之圖式的比例與配置關係解讀、侷限本創作於實際實施上的權利範圍。此外,為使便於理解,下述實施例中的相同元件係以相同的符號標示來說明。In order to facilitate the understanding of the technical features, content and advantages of this creation and the effects it can achieve, this creation is hereby combined with the drawings and described in detail in the form of embodiments as follows, and the ideas used in it are only for the purpose of For the purpose of illustration and auxiliary instructions, it may not be the true proportion and precise configuration of this creation after its implementation. Therefore, the scale and configuration relationship of the attached drawings should not be interpreted or limited to the scope of rights of this creation in actual implementation. In addition, for ease of understanding, the same elements in the following embodiments are described with the same symbols.

另外,在全篇說明書與申請專利範圍所使用的用詞,除有特別註明外,通常具有每個用詞使用在此領域中、在此揭露的內容中與特殊內容中的平常意義。某些用以描述本創作的用詞將於下或在此說明書的別處討論,以提供本領域技術人員在有關本創作的描述上額外的引導。In addition, the terms used in the entire specification and patent claims generally have the ordinary meanings of each term used in this field, in the disclosed content and in the special content, unless otherwise specified. Certain terms used to describe the invention are discussed below or elsewhere in this specification to provide those skilled in the art with additional guidance in describing the invention.

關於本文中如使用“第一”、“第二”、“第三”等,並非特別指稱次序或順位的意思,亦非用以限定本創作,其僅僅是為了區別以相同技術用語描述的組件或操作而已。Regarding the use of "first", "second", "third", etc. in this article, it does not specifically refer to the meaning of order or order, nor is it used to limit the creation, it is just to distinguish components described with the same technical terms or operation only.

其次,在本文中如使用用詞“包含”、“包括”、“具有”、“含有”等,其均為開放性的用語,即意指包含但不限於。Secondly, if the words "comprising", "including", "having", "containing" etc. are used in this article, they are all open terms, meaning including but not limited to.

請參閱圖1至圖3,圖1係繪示本發明之整合雷射與微波的退火系統之運作示意圖,圖2為本發明之整合雷射與微波的退火方法之運作流程圖,圖3為本發明之整合雷射與微波的退火系統之系統示意圖。本發明提出一種整合雷射與微波的退火系統與退火方法,其係利用微波功率源系統30提供微波能量予一待退火物100之第一區域,以及利用雷射加熱源系統50提供雷射能量予待退火物之第二區域,藉此可達到退火效果,還可控制所需提供之微波能量及雷射能量,並且例如可減少整體退火所需時間。此外,本發明還可藉由測控系統80監測與控制微波功率源系統30及雷射加熱源系統50之運作。此外,依據實際製程需求而定,上述之第一區域與第二區域可定義於待退火物100之任何適合的位置,可具有任何適合的面積或體積,也可具有任何適合的位置關係。微波功率源系統30可於任何適合的第一時間區間提供微波能量,雷射加熱源系統50也可於任何適合的第二時間區間提供雷射能量。Please refer to Fig. 1 to Fig. 3, Fig. 1 is the schematic diagram showing the operation of the annealing system integrating laser and microwave of the present invention, Fig. 2 is the operation flowchart of the annealing method integrating laser and microwave of the present invention, Fig. 3 is A schematic diagram of the annealing system integrating laser and microwave of the present invention. The present invention proposes an annealing system and annealing method integrating laser and microwave, which uses a microwave power source system 30 to provide microwave energy to the first region of an object to be annealed 100, and uses a laser heating source system 50 to provide laser energy The second area of the object to be annealed is provided, so that the annealing effect can be achieved, and the microwave energy and laser energy to be provided can also be controlled, and for example, the time required for the overall annealing can be reduced. In addition, the present invention can monitor and control the operation of the microwave power source system 30 and the laser heating source system 50 through the measurement and control system 80 . In addition, according to actual process requirements, the above-mentioned first region and second region can be defined at any suitable position of the object to be annealed 100 , can have any suitable area or volume, and can also have any suitable positional relationship. The microwave power source system 30 can provide microwave energy at any suitable first time interval, and the laser heating source system 50 can also provide laser energy at any suitable second time interval.

舉例而言,本發明之第一區域不限於部份重疊、完全重疊或未重疊於第二區域,本發明之第一區域之面積或體積不限於大於、等於或小於第二區域。舉例而言,第一區域可包含第二區域,或第二區域可包含第一區域,或者是第一區域也可為鄰接第二區域,甚至第一區域與第二區域也可為分別獨立定義於待退火物100上。而且,微波功率源系統30提供微波能量的第一時間區間可部份重疊、完全重疊或未重疊於雷射加熱源系統50提供雷射能量的第二時間區間。舉例而言,第一時間區間可包含第二時間區間,或第二時間區間可包含第一時間區間,或者是第一時間區間及第二時間區間係彼此緊鄰,或者是第一時間區間及第二時間區間可為分別獨立。第一時間區間之長度也可例如為大於、小於或等於第二時間區間。For example, the first region of the present invention is not limited to partially overlap, completely overlap or not overlap with the second region, and the area or volume of the first region of the present invention is not limited to be greater than, equal to or smaller than the second region. For example, the first area may include the second area, or the second area may include the first area, or the first area may also be adjacent to the second area, or even the first area and the second area may be independently defined on the object to be annealed 100 . Moreover, the first time interval during which the microwave power source system 30 provides microwave energy may partially overlap, completely overlap or not overlap with the second time interval during which the laser heating source system 50 provides laser energy. For example, the first time interval may include the second time interval, or the second time interval may include the first time interval, or the first time interval and the second time interval are immediately adjacent to each other, or the first time interval and the second time interval The two time intervals may be independent. The length of the first time interval may also be, for example, greater than, less than or equal to the length of the second time interval.

續言之,舉例而言,本發明提出一種整合雷射與微波的退火系統與退火方法,藉由微波之微波能量對待退火物之第一區域進行微波退火程序以提升溫度,並且搭配雷射之雷射能量對此第一區域中之第二區域作雷射退火程序。本發明藉由微波能量升高待退火物之溫度,因此有助於增加待退火物 (如矽或碳化矽等半導體材料)的雷射能量吸收率,故本發明可降低進行雷射退火程序所需提供之雷射能量,或是可以減少整體退火所需時間。反之,本發明也可藉由雷射能量升高待退火物之溫度,有助於待退火物吸收微波能量。而且,本發明針對非第二區域與第二區域整體式提供微波能量,可降低非第二區域(即非雷射退火區)與第二區域(即雷射退火區)的溫度差(Thermal Shock),以避免應力差異大而產生裂縫或缺陷。To continue, for example, the present invention proposes an annealing system and annealing method that integrates laser and microwave, using microwave energy to perform microwave annealing on the first region of the object to be annealed to increase the temperature, and with laser The laser energy performs laser annealing on the second region in the first region. The present invention uses microwave energy to increase the temperature of the object to be annealed, thus helping to increase the laser energy absorption rate of the object to be annealed (semiconductor materials such as silicon or silicon carbide), so the present invention can reduce the cost of the laser annealing process The laser energy that needs to be provided may reduce the time required for the overall annealing. Conversely, the present invention can also use laser energy to increase the temperature of the object to be annealed, which helps the object to be annealed to absorb microwave energy. Moreover, the present invention provides microwave energy integrally for the non-second region and the second region, which can reduce the temperature difference (Thermal Shock ) to avoid cracks or defects due to large stress differences.

上述之第一區域係定義於部份或全部之待退火物上,上述之第二區域則係例如定義於部份或全部之第一區域上。上述之第一區域及第二區域均不限於位於待退火物之一深度或一表面上。而且,本發明之第一區域與第二區域之面積、體積及位置關係並不侷限於後述之範例,只要能夠減少整體退火所需時間、降低應力差異或是降低進行雷射退火程序所需提供之雷射能量,均屬於本發明請求保護之範圍。上述之待退火物可例如為任何適合進行退火處理之材料,例如經過改質處理、分離處理、離子佈植處理或其他半導體製程處理的基材,此基材可例如為晶圓或晶錠等半導體製程材料,例如,但不限於,Si、SiC、SiGe、Ge、GaAs、GaN或InP等基板材料。舉例而言,待退火物100例如為完成離子佈植的矽基材,對於第一區域(表面的源極、閘極)使用微波退火,對於第二區域(較深的井(deep P或N well))使用雷射退火。或者,也可以是基材因改質或外力剝離後,改質區或剝離面(第一區域/第二區域)的退火,同時以微波及雷射做退火達到缺陷修補、晶格重置的效果。此外,本發明之微波功率源系統並不侷限於使待退火物之溫度提升至特定溫度,任何提升之溫度值只要可增加待退火物的雷射能量吸收率或降低應力差異,就可適用於本發明。The above-mentioned first region is defined on part or all of the object to be annealed, and the above-mentioned second region is, for example, defined on part or all of the first region. The above-mentioned first region and second region are not limited to be located on a depth or a surface of the object to be annealed. Moreover, the area, volume, and positional relationship between the first region and the second region of the present invention are not limited to the examples described later, as long as the time required for the overall annealing can be reduced, the stress difference can be reduced, or the laser annealing process can be reduced. The laser energy, all belong to the scope of protection of the present invention. The above-mentioned object to be annealed can be, for example, any material suitable for annealing treatment, such as a substrate that has undergone modification treatment, separation treatment, ion implantation treatment, or other semiconductor manufacturing processes. This substrate can be, for example, a wafer or crystal ingot, etc. Semiconductor process materials, such as, but not limited to, substrate materials such as Si, SiC, SiGe, Ge, GaAs, GaN or InP. For example, the object to be annealed 100 is, for example, a silicon substrate that has completed ion implantation. Microwave annealing is used for the first region (surface source, gate), and for the second region (deep P or N well)) using laser annealing. Alternatively, after the substrate is stripped due to modification or external force, the modified area or the stripped surface (first area/second area) is annealed, and microwave and laser are used for annealing at the same time to achieve defect repair and lattice reset. Effect. In addition, the microwave power source system of the present invention is not limited to raising the temperature of the object to be annealed to a specific temperature. Any elevated temperature value can be applied to the this invention.

請參閱圖2及圖3,本發明之退火系統10係包含至少一微波功率源系統30、一雷射加熱源系統50及一測控系統80。如步驟S10所示,首先進行微波退火程序,其中微波功率源系統30係產生微波33,並使此微波33照射在待退火物100之第一區域110上,藉以利用微波33之微波能量提升此第一區域110之溫度,可達到進行微波退火程序之效果。待退火物100係例如承載於載台150上,此載台例如為移動式載台,但不限於此,此載台亦可例如為固定式載台。微波功率源系統30係以第一功率提供微波能量,且微波能量係沿著第一軸向D1提供予第一區域110。如步驟S20所示,本發明之雷射加熱源系統50係產生雷射54,並使此雷射照射在待退火物100之第二區域120上。微波功率源系統30係以第一功率提供微波能量。雷射加熱源系統50係以第二功率提供雷射能量,且雷射能量係沿著第二軸向D2提供予第二區域120。上述第一軸向與第二軸向之夾角之範圍為約0度至180度。舉例而言,第一軸向可例如為平行(如同方向或反方向)或垂直於第二軸向。微波功率源系統30之輸出模式可為連續式的微波源或脈衝寬度介於約1 μs至約1 ms之範圍的間歇性的微波源。微波功率源系統30提供微波能量予第一區域110之第一時間區間可為涵蓋雷射加熱源系統50提供雷射能量予第二區域120之第二時間區間,即第二時間區間較佳完全重疊於第一時間區間。或者是,雷射加熱源系統50提供雷射能量予第二區域120之第二時間區間可為涵蓋微波功率源系統30提供微波能量予第一區域110之第一時間區間。惟,此僅為舉例並非用以限定本發明,亦即第二時間區間亦可例如為僅部分重疊於第一時間區間,或者甚至未完全重疊於第一時間區間。微波功率源系統30提供微波能量與雷射加熱源系統50提供雷射能量之任何時間對應關係,只要能夠達到減少整體退火所需時間、降低應力差異或是降低進行雷射退火程序所需提供之雷射能量,均屬於本發明請求保護之範圍。Please refer to FIG. 2 and FIG. 3 , the annealing system 10 of the present invention includes at least one microwave power source system 30 , a laser heating source system 50 and a measurement and control system 80 . As shown in step S10, a microwave annealing procedure is first carried out, wherein the microwave power source system 30 generates microwaves 33, and makes the microwaves 33 irradiate on the first region 110 of the object to be annealed 100, so as to use the microwave energy of the microwaves 33 to enhance the first region 110. The temperature of the first region 110 can achieve the effect of microwave annealing process. The object to be annealed 100 is, for example, carried on a carrier 150 , which is, for example, a mobile carrier, but is not limited thereto. The carrier can also be, for example, a fixed carrier. The microwave power source system 30 provides microwave energy with a first power, and the microwave energy is provided to the first region 110 along the first axis D1. As shown in step S20 , the laser heating source system 50 of the present invention generates a laser 54 and irradiates the second region 120 of the object to be annealed 100 with the laser. The microwave power source system 30 provides microwave energy at a first power. The laser heating source system 50 provides laser energy with the second power, and the laser energy is provided to the second region 120 along the second axis D2. The included angle between the first axis and the second axis ranges from about 0° to 180°. For example, the first axis can be, for example, parallel (like the direction or opposite direction) or perpendicular to the second axis. The output mode of the microwave power source system 30 can be a continuous microwave source or an intermittent microwave source with a pulse width ranging from about 1 μs to about 1 ms. The first time interval in which the microwave power source system 30 provides microwave energy to the first region 110 can cover the second time interval in which the laser heating source system 50 provides laser energy to the second region 120, that is, the second time interval is preferably completely Overlaps the first time interval. Alternatively, the second time interval during which the laser heating source system 50 provides laser energy to the second region 120 may cover the first time interval during which the microwave power source system 30 provides microwave energy to the first region 110 . However, this is just an example and not intended to limit the present invention, that is, the second time interval may also, for example, only partially overlap the first time interval, or even not completely overlap the first time interval. Any time correspondence relationship between the microwave energy provided by the microwave power source system 30 and the laser energy provided by the laser heating source system 50, as long as it can reduce the time required for the overall annealing, reduce the stress difference, or reduce the amount of energy required for the laser annealing process. Laser energy all belong to the scope of protection claimed by the present invention.

在本發明之微波功率源系統30中,微波之波長範圍為約1mm至約1m,微波之頻率範圍為約300GHz至約0.3GHz。微波之功率範圍為約200瓦至約5,000瓦。本發明屬於工業應用,其可用之頻率屬於ISM頻段(Industrial Scientific Medical Band)。依據國際電聯無線電規則規定屬於微波頻率範圍有:433.05-434.79 MHz、902-928 MHz、2400-2483.5 MHz….等等。本發明可使用約2400-2483.5 MHz的微波頻率,甚至使用不屬於國際電聯無線電規則規定之頻率,例如需要申請使用許可之500 MHz或其他頻率。在本發明之雷射加熱源系統50中,雷射波長例如為約150nm至約1600nm、移動速率之範圍為約10毫米/秒至約1000毫米/秒、功率範圍為約10mW至約100kW、焦點直徑 (spot size) 之範圍為約1μm至約50μm;雷射可為脈衝雷射,其頻率之範圍可為約1Hz至約1MHz、脈衝寬度之範圍可為約100fs至約100ns。In the microwave power source system 30 of the present invention, the microwave wavelength ranges from about 1 mm to about 1 m, and the microwave frequency ranges from about 300 GHz to about 0.3 GHz. Microwave power ranges from about 200 watts to about 5,000 watts. The present invention belongs to industrial application, and its available frequency belongs to ISM frequency band (Industrial Scientific Medical Band). According to the ITU Radio Regulations, the microwave frequency ranges are: 433.05-434.79 MHz, 902-928 MHz, 2400-2483.5 MHz...etc. The present invention can use microwave frequencies of about 2400-2483.5 MHz, and even use frequencies that are not regulated by ITU Radio Regulations, such as 500 MHz or other frequencies that need to apply for a license. In the laser heating source system 50 of the present invention, the laser wavelength is, for example, about 150nm to about 1600nm, the range of moving speed is about 10 mm/s to about 1000 mm/s, the power range is about 10 mW to about 100 kW, the focus The diameter (spot size) ranges from about 1 μm to about 50 μm; the laser can be pulsed laser, its frequency can range from about 1 Hz to about 1 MHz, and the pulse width can range from about 100 fs to about 100 ns.

本發明之退火系統10之測控系統80係包含一測溫裝置82、一功率量測裝置84及一控制裝置86。如步驟S30,本發明更包含進行測控程序,其中測溫裝置82係監測待退火物100之一溫度值,功率量測裝置84係量測微波功率源系統30及雷射加熱源系統50之至少一者之一功率變化,其中控制裝置86則係依據上述之溫度值及功率變化對應地調整微波功率源系統30提供微波能量之第一功率以及/或者調整雷射加熱源系統50提供雷射能量之第二功率。例如,本發明可依據監測得到之待退火物100之溫度值及微波功率源系統30及/或雷射加熱源系統50之功率變化,提升微波功率源系統30之第一功率,或者是降低雷射加熱源系統50之第二功率。由此可知,本發明可以減少整體退火所需時間,或是可降低進行雷射退火程序所需提供之雷射能量。The measurement and control system 80 of the annealing system 10 of the present invention includes a temperature measurement device 82 , a power measurement device 84 and a control device 86 . As in step S30, the present invention further includes a measurement and control program, wherein the temperature measuring device 82 monitors a temperature value of the object to be annealed 100, and the power measuring device 84 measures at least the microwave power source system 30 and the laser heating source system 50. One of the power changes, wherein the control device 86 correspondingly adjusts the first power of the microwave power source system 30 to provide microwave energy and/or adjusts the laser heating source system 50 to provide laser energy according to the above-mentioned temperature value and power change the second power. For example, the present invention can increase the first power of the microwave power source system 30 or reduce the first power of the microwave power source system 30 according to the monitored temperature value of the object to be annealed 100 and the power change of the microwave power source system 30 and/or the laser heating source system 50. Radiate the second power of the heat source system 50. It can be seen that the present invention can reduce the time required for the overall annealing, or can reduce the laser energy required for the laser annealing process.

測溫裝置82係例如為光學測溫裝置(Optical Pyrometer),如紅外線高溫計,用以較佳為即時監測待退火物100之溫度值。控制裝置86係例如為電腦,控制裝置86係接收測溫裝置82之監測訊號及功率量測裝置84量測之功率變化,藉以控制微波功率源系統30及雷射加熱源系統50,例如提升微波功率源系統30之第一功率,或者是降低雷射加熱源系統50之第二功率。功率量測裝置84更例如包含方向耦合器(Directional Coupler)84a及功率計(Power Meter)84b,方向耦合器84a係用於檢測輸入和反射的微波/雷射訊號,檢測到的訊號再送到功率計84b,用於監測微波/雷射與待退火物100的耦合。亦即,方向耦合器84a可用以檢測微波功率源系統30所提供之微波之前進訊號及來自待退火物100之反射訊號,以及/或者檢測雷射加熱源系統50所提供之雷射之前進訊號及來自待退火物100之反射訊號。然後,方向耦合器84a再將這些檢測到的訊號再送到功率計84b,用於即時監測微波及/或雷射與待退火物100的耦合變化(如功率變化)。藉此控制裝置86可接收此功率變化數據並依據上述之功率變化而即時對應地產生一調整指令,以便控制微波功率源系統30及雷射加熱源系統50之至少一者之運作。此外,本發明之測控系統80可選擇性更例如包含一監視器電性連接控制裝置86,藉以即時顯示測控系統80之各個組件之監測結果,例如所有微波、雷射和溫度數據可輸入電腦記錄及處理並立即顯示在監視器上。The temperature measuring device 82 is, for example, an optical pyrometer, such as an infrared pyrometer, which is preferably used to monitor the temperature of the object to be annealed 100 in real time. The control device 86 is, for example, a computer, and the control device 86 receives the monitoring signal of the temperature measuring device 82 and the power change measured by the power measuring device 84, so as to control the microwave power source system 30 and the laser heating source system 50, such as raising the microwave The first power of the power source system 30, or the second power of the laser heating source system 50 is reduced. The power measurement device 84 further includes, for example, a directional coupler (Directional Coupler) 84a and a power meter (Power Meter) 84b. The directional coupler 84a is used to detect input and reflected microwave/laser signals, and the detected signals are sent to the power meter. A meter 84b is used to monitor the coupling of microwave/laser and the object 100 to be annealed. That is, the directional coupler 84a can be used to detect the forward signal of the microwave provided by the microwave power source system 30 and the reflected signal from the object to be annealed 100, and/or detect the forward signal of the laser provided by the laser heating source system 50 And the reflected signal from the object 100 to be annealed. Then, the directional coupler 84a sends the detected signals to the power meter 84b for real-time monitoring of coupling changes (such as power changes) between the microwave and/or laser and the object to be annealed 100 . In this way, the control device 86 can receive the power change data and generate an adjustment command accordingly in real time according to the above power change, so as to control the operation of at least one of the microwave power source system 30 and the laser heating source system 50 . In addition, the measurement and control system 80 of the present invention may optionally include, for example, a monitor electrically connected to the control device 86, so as to display the monitoring results of each component of the measurement and control system 80 in real time, for example, all microwave, laser and temperature data can be input into the computer for recording and processed and displayed on the monitor immediately.

請參閱圖1至圖4所示,圖4為本發明之第一實施例之退火系統中微波能量與雷射能量從相對側提供至待退火物之結構示意圖。在第一實施例中,微波功率源系統30係整體式提供微波能量予第一區域110中之待退火物100,雷射加熱源系統50係掃描式提供雷射能量予第二區域120中之待退火物150。在第一實施例中,第一區域110係包含第二區域120,即第一區域110之面積及體積大於第二區域120。而且在第一實施例中,微波功率源系統30提供微波能量予第一區域110之第一時間區間可為涵蓋雷射加熱源系統50提供雷射能量予第二區域120之第二時間區間,即第二時間區間完全重疊於第一時間區間。其中,微波能量係由第一軸向D1(如圖4所示之由下往上)提供至待退火物之第一區域110上,雷射能量係由第二軸向D2(如圖4所示之由上往下)提供至待退火物之第二區域120上,且第一軸向D1係重疊於第二軸向D2。本發明之退火系統10包含一微波功率源系統30、一雷射加熱源系統50及一測控系統80。微波功率源系統30係包含至少一微波產生器32及一共振腔34,微波產生器32係例如為用以產生上述之微波33之磁控管。共振腔34例如為同軸共振腔。舉例來說,共振腔34係例如為TE 10模式共振腔,且其內部可為中空或實心之波導元件,端視實際使用而調整,只要能導引微波並使微波在其中產生共振,即可適用於本發明中。微波產生器32所產生之微波例如經由金屬桿31之導引而傳輸至共振腔34,共振腔34再將微波產生器32所產生之微波導引至待退火物100之第一區域110上,藉以整體式加熱待退火物100之第一區域110,使其溫度提昇。微波功率源系統30還選擇性例如包含一隔離器(Isolator)36及一匹配器38設於微波產生器32及共振腔34之間。微波功率源系統30係藉由微波產生器32(如磁控管)產生微波33,且經由共振腔(Coaxial Resonator)34之導引而傳遞至待退火物100之第一區域110上,藉以進行微波退火程序。其中,微波的傳輸路徑(如共振腔34)上較佳還設有匹配器38,其可降低微波反射量,使得微波能夠有效進入共振腔34中,藉以沿著共振腔34中之腔室(如環柱狀腔室)傳遞至待退火物100上。其中,共振腔34之軸心不限於中空或為實心結構,只要可導引微波均適合用於本發明。匹配器38係例如由同軸管38a、金屬板38b及金屬桿38c組成。隔離器36較佳為設於微波產生器32與共振腔34之間,其可提供單向傳輸微波的效果,且隔離器36較佳為設於微波產生器32與匹配器38之間。惟,上述之微波功率源系統30之構件與其配置僅為一舉例,並非用以限定本發明,微波功率源系統30可為任何形式之微波源,只要能提供微波,即屬於本發明請求保護之範圍。 Please refer to FIG. 1 to FIG. 4 . FIG. 4 is a structural schematic view of microwave energy and laser energy supplied to the object to be annealed from opposite sides in the annealing system according to the first embodiment of the present invention. In the first embodiment, the microwave power source system 30 provides microwave energy to the object to be annealed 100 in the first region 110 in an integrated manner, and the laser heating source system 50 provides laser energy to the objects in the second region 120 in a scanning manner. 150 objects to be annealed. In the first embodiment, the first region 110 includes the second region 120 , that is, the area and volume of the first region 110 are larger than the second region 120 . Moreover, in the first embodiment, the first time interval during which the microwave power source system 30 provides microwave energy to the first region 110 may cover the second time interval during which the laser heating source system 50 provides laser energy to the second region 120, That is, the second time interval completely overlaps the first time interval. Wherein, the microwave energy is supplied to the first region 110 of the object to be annealed from the first axis D1 (from bottom to top as shown in FIG. 4 ), and the laser energy is supplied from the second axis D2 (as shown in FIG. 4 ). (shown from top to bottom) is provided on the second region 120 of the object to be annealed, and the first axis D1 is overlapped with the second axis D2. The annealing system 10 of the present invention includes a microwave power source system 30 , a laser heating source system 50 and a measurement and control system 80 . The microwave power source system 30 includes at least one microwave generator 32 and a resonant cavity 34. The microwave generator 32 is, for example, a magnetron for generating the microwave 33 mentioned above. The resonant cavity 34 is, for example, a coaxial resonant cavity. For example, the resonant cavity 34 is, for example, a TE 10 mode resonant cavity, and its interior can be a hollow or solid waveguide element, which can be adjusted depending on the actual use, as long as it can guide the microwave and make the microwave resonate therein. applicable to the present invention. The microwaves generated by the microwave generator 32 are transmitted to the resonant cavity 34, for example, guided by the metal rod 31, and the resonant cavity 34 guides the microwaves generated by the microwave generator 32 to the first region 110 of the object to be annealed 100, The first region 110 of the object to be annealed 100 is heated integrally to increase its temperature. The microwave power source system 30 also optionally includes, for example, an isolator (Isolator) 36 and a matcher 38 disposed between the microwave generator 32 and the resonant cavity 34 . The microwave power source system 30 generates microwaves 33 by a microwave generator 32 (such as a magnetron), and transmits them to the first region 110 of the object to be annealed 100 through the guidance of a resonant cavity (Coaxial Resonator) 34, thereby performing Microwave annealing procedure. Wherein, the microwave transmission path (such as the resonant cavity 34) is preferably also provided with a matching device 38, which can reduce the amount of microwave reflection, so that the microwave can effectively enter the resonant cavity 34, so as to follow the cavity in the resonant cavity 34 ( such as a ring columnar chamber) is transferred to the object to be annealed 100 . Wherein, the axis of the resonant cavity 34 is not limited to a hollow or solid structure, as long as it can guide microwaves, it is suitable for use in the present invention. The adapter 38 is, for example, composed of a coaxial tube 38a, a metal plate 38b and a metal rod 38c. The isolator 36 is preferably disposed between the microwave generator 32 and the resonant cavity 34 , which can provide the effect of one-way transmission of microwaves, and the isolator 36 is preferably disposed between the microwave generator 32 and the matching device 38 . However, the components and configurations of the above-mentioned microwave power source system 30 are only an example, and are not intended to limit the present invention. The microwave power source system 30 can be any form of microwave source, as long as it can provide microwaves, it belongs to the claimed protection of the present invention. scope.

在第一實施例之退火系統中,雷射加熱源系統50係藉由雷射產生器52產生一雷射54,此雷射54係一種脈衝光,且此雷射54係經由透鏡組56傳遞至待退火物100之一第二區域120上。本發明可利用移動式載台水平式移動待退火物100(如圖4的橫向雙箭頭C1所示)或者是雷射產生器52水平式移動脈衝光(如圖4的橫向雙箭頭L1所示),藉以使得脈衝光水平式掃描照射待退火物100之第二區域120。此外,本發明還可例如利用移動式載台垂直式移動待退火物100(即,雷射產生器52縱向固定,而載台縱向可移動,如圖4右側的縱向雙箭頭C2所示)或者是雷射產生器52垂直式移動脈衝光(即,雷射產生器52縱向可移動,而載台縱向固定,如圖4的縱向雙箭頭L2所示),藉以使得脈衝光垂直式掃描照射待退火物100之第二區域120。換言之,本發明可選擇性在退火程序中依據待退火物100之形態(例如外型)對應地上下調整雷射產生器52所產生之脈衝光之聚焦點照射待退火物100之深度,以達較佳退火效果。In the annealing system of the first embodiment, the laser heating source system 50 generates a laser 54 by the laser generator 52, the laser 54 is a kind of pulsed light, and the laser 54 is transmitted through the lens group 56 onto the second region 120 of the object to be annealed 100 . The present invention can use the mobile stage to move the object to be annealed 100 horizontally (as shown by the horizontal double arrow C1 in FIG. 4 ) or the laser generator 52 to horizontally move the pulsed light (as shown by the horizontal double arrow L1 in FIG. 4 ), so that the pulsed light scans horizontally to irradiate the second region 120 of the object to be annealed 100 . In addition, the present invention can also vertically move the object 100 to be annealed by using a mobile stage (that is, the laser generator 52 is fixed longitudinally, and the stage is movable longitudinally, as shown by the vertical double arrow C2 on the right side of FIG. 4 ) or It is the laser generator 52 that moves the pulsed light vertically (that is, the laser generator 52 is movable longitudinally, and the stage is fixed longitudinally, as shown by the vertical double arrow L2 in FIG. The second region 120 of the annealed object 100 . In other words, the present invention can selectively adjust the depth of the focus point of the pulsed light generated by the laser generator 52 to irradiate the object 100 to be annealed according to the form (such as the shape) of the object to be annealed 100 during the annealing process, so as to achieve Better annealing effect.

承上所述,第二區域120可選擇性位於部份或全部之第一區域110上,端視實際需求而定。雷射產生器52所產生之雷射54可例如沿著徑向截面(Radial Section)或軸向截面(Axial Section)之方向掃描以提供能量予待退火物100之第二區域120,其中雷射54也可例如為沿著徑向截面或軸向截面之方向掃描,且其掃描路徑並無特別限定,只要能夠提供雷射能量予待退火物100之第二區域120,即可適用於本發明。而且,由於第二區域120位於第一區域110中,且本發明已藉由微波功率源系統30所提供之微波能量升高第一區域110(包含第二區域120)之溫度,因此有助於增加第二區域120中的待退火物100的雷射能量吸收率,故本發明可降低進行雷射退火程序所需提供之雷射能量,或是可以減少整體退火所需時間。而且,本發明針對第一區域110與第二區域120整體式提供微波能量,可降低第二區域120(即雷射退火區)與非第二區域(即非雷射退火區)之間的溫度差,以避免應力差異大而產生裂縫或缺陷。Based on the above, the second area 120 can be selectively located on part or all of the first area 110, depending on actual needs. The laser 54 generated by the laser generator 52 can, for example, scan along the direction of the radial section (Radial Section) or the direction of the axial section (Axial Section) to provide energy to the second region 120 of the object to be annealed 100, wherein the laser 54 can also be scanned along the direction of the radial section or the axial section, and the scanning path is not particularly limited, as long as it can provide laser energy to the second region 120 of the object to be annealed 100, it can be applied to the present invention . Moreover, since the second region 120 is located in the first region 110, and the present invention has raised the temperature of the first region 110 (including the second region 120) by the microwave energy provided by the microwave power source system 30, it contributes to The laser energy absorptivity of the object to be annealed 100 in the second region 120 is increased, so the present invention can reduce the required laser energy for the laser annealing process, or can reduce the time required for the overall annealing. Moreover, the present invention provides integrated microwave energy for the first region 110 and the second region 120, which can reduce the temperature between the second region 120 (ie, the laser annealing area) and the non-second area (ie, the non-laser annealing area). Poor to avoid cracks or defects due to large stress differences.

此外,本發明之退火系統10可選擇性設有微波吸收(Microwave Absorbing)元件70,微波吸收元件70與微波功率源系統30(如微波產生器32)係位於待退火物100之相對側,其目的在於減少微波從另一側反射回來,避免不必要的散射,以提升微波吸收的均勻度。若微波吸收元件70係位於雷射加熱源系統50與待退火物100之間,則微波吸收元件70可依據實際狀況,設置有穿孔,以供透鏡組56或雷射穿透。微波吸收元件70可為由任何微波吸收材料組成之微波吸收元件層,只要能夠提供吸收微波的效果,均屬於本發明請求保護之範圍。In addition, the annealing system 10 of the present invention can optionally be provided with a microwave absorbing (Microwave Absorbing) element 70, and the microwave absorbing element 70 and the microwave power source system 30 (such as the microwave generator 32) are located on the opposite side of the object to be annealed 100, which The purpose is to reduce the reflection of microwaves from the other side, avoid unnecessary scattering, and improve the uniformity of microwave absorption. If the microwave absorbing element 70 is located between the laser heating source system 50 and the object to be annealed 100, the microwave absorbing element 70 may be provided with perforations according to actual conditions for the lens group 56 or the laser to penetrate. The microwave absorbing element 70 can be a microwave absorbing element layer composed of any microwave absorbing material, as long as it can provide the effect of absorbing microwaves, it all belongs to the protection scope of the present invention.

請參閱圖1、圖2及圖5,圖5為本發明之第二實施例之退火系統中微波能量與雷射能量從同一側提供至待退火物之結構示意圖。第二實施例與第一實施例之差異在於第二實施例之微波能量與雷射能量係由第一軸向之同一方向提供至待退火物100上,且雷射加熱源系統50所產生之雷射54係同軸於微波功率源系統30所提供之微波33。例如,微波33係沿著第一軸向D1(如圖5所示之由上而下)穿過共振腔34並傳輸至待退火物100之第一區域110上,而雷射54係沿著 第二軸向D2(如圖5所示之由上而下,同第一軸向D1)穿過共振腔34並傳輸至待退火物100之第二區域120上。舉例而言,雷射加熱源系統50之透鏡組56係同軸式設於微波功率源系統30之共振腔34上,透鏡組56較佳為位於共振腔34之軸心上,且不限於位於共振腔34之外部或穿透至其內部(如圖5所示),因此共振腔34不限於為透明或不透明材質,只要可允許雷射照射至待退火物100之第二區域120,均屬於本發明請求保護之範圍。Please refer to FIG. 1 , FIG. 2 and FIG. 5 . FIG. 5 is a schematic diagram of the structure of the annealing system in which microwave energy and laser energy are provided from the same side to the object to be annealed in the second embodiment of the present invention. The difference between the second embodiment and the first embodiment is that the microwave energy and the laser energy of the second embodiment are provided to the object to be annealed 100 from the same direction of the first axis, and the laser heating source system 50 produces The laser 54 is coaxial with the microwave 33 provided by the microwave power source system 30 . For example, the microwave 33 passes through the resonant cavity 34 along the first axis D1 (from top to bottom as shown in FIG. The second axis D2 (same as the first axis D1 from top to bottom as shown in FIG. 5 ) passes through the resonant cavity 34 and is transmitted to the second region 120 of the object to be annealed 100 . For example, the lens group 56 of the laser heating source system 50 is coaxially arranged on the resonant cavity 34 of the microwave power source system 30. The lens group 56 is preferably located on the axis of the resonant cavity 34, and is not limited to being located at the resonant cavity. The outside of the cavity 34 or penetrates into it (as shown in FIG. 5 ), so the resonant cavity 34 is not limited to transparent or opaque material, as long as it can allow the laser to irradiate to the second region 120 of the object to be annealed 100, all belong to this invention. The scope of protection claimed for the invention.

請參閱圖1、圖2及圖6,圖6為本發明之第三實施例之退火系統中微波能量與雷射能量從垂直側提供至待退火物之結構示意圖。第三實施例與其他實施例之差異在於微波功率源系統30之設計不同,且其中微波能量係由第一軸向D1(如圖6所示之由右往左)提供至待退火物之第一區域110上,雷射能量係由第二軸向D2(如圖6所示之由上往下)提供至待退火物之第二區域120上,且第一軸向D1係垂直於第二軸向D2。第三實施例之微波功率源系統30係包含同軸設置之至少一微波產生器32及共振腔34。微波功率源系統30還選擇性包含上述之隔離器36設於微波產生器32及共振腔34之間,其可提供單向傳輸微波以及吸收反射微波的效果。此外,微波功率源系統30還可選擇性包含上述之匹配器(未繪示)位於微波產生器32及共振腔34之間,且較佳為設於隔離器36及共振腔34之間,其可降低微波反射量,使得微波能夠有效進入共振腔34中,藉以傳遞至待退火物100上。第三實施例之共振腔34更選擇性具有開口35,藉以使得載台150可利用此開口35將待退火物100上欲處理之第一區域110送入共振腔34中,或在共振腔34中移動位置。藉此,共振腔34亦可同時作為微波反應腔,藉以在共振腔34中進行微波退火。雷射加熱源系統50之透鏡組56係設於微波功率源系統30之共振腔34上,透鏡組56可位於共振腔34上,且不限於位於共振腔34之外部或穿透至其內部,因此共振腔34可為透明或不透明材質,或者共振腔34也可以具有孔洞以讓雷射通過,只要可允許雷射由第二軸向D2照射至待退火物100之第二區域120,均屬於本發明請求保護之範圍。Please refer to FIG. 1 , FIG. 2 and FIG. 6 . FIG. 6 is a schematic diagram of the structure of the annealing system in which microwave energy and laser energy are provided from the vertical side to the object to be annealed in the third embodiment of the present invention. The difference between the third embodiment and other embodiments is that the design of the microwave power source system 30 is different, and wherein the microwave energy is provided from the first axis D1 (from right to left as shown in FIG. 6 ) to the first annealing object. On a region 110, the laser energy is provided from the second axis D2 (from top to bottom as shown in FIG. 6 ) to the second region 120 of the object to be annealed, and the first axis D1 is perpendicular to the second Axial D2. The microwave power source system 30 of the third embodiment includes at least one microwave generator 32 and a resonant cavity 34 arranged coaxially. The microwave power source system 30 also optionally includes the above-mentioned isolator 36 disposed between the microwave generator 32 and the resonant cavity 34 , which can provide the effects of one-way transmission of microwaves and absorption of reflected microwaves. In addition, the microwave power source system 30 can also optionally include the above-mentioned matching device (not shown) located between the microwave generator 32 and the resonant cavity 34, and preferably between the isolator 36 and the resonant cavity 34, which The amount of microwave reflection can be reduced, so that the microwave can effectively enter the resonant cavity 34 so as to be transmitted to the object to be annealed 100 . The resonant cavity 34 of the third embodiment has an opening 35 more selectively, so that the carrier 150 can use the opening 35 to send the first region 110 to be processed on the object to be annealed 100 into the resonant cavity 34, or in the resonant cavity 34 Move position. In this way, the resonant cavity 34 can also be used as a microwave reaction cavity at the same time, so that microwave annealing can be performed in the resonant cavity 34 . The lens group 56 of the laser heating source system 50 is arranged on the resonant cavity 34 of the microwave power source system 30. The lens group 56 can be located on the resonant cavity 34, and is not limited to being located outside the resonant cavity 34 or penetrating into it. Therefore, the resonant cavity 34 can be made of transparent or opaque material, or the resonant cavity 34 can also have a hole to allow the laser to pass through, as long as the laser can be irradiated from the second axis D2 to the second region 120 of the object to be annealed 100, all belong to the The scope of protection claimed by the present invention.

請參閱圖1、圖2、圖7及圖8,圖7為本發明之第四實施例之退火系統中微波能量與雷射能量從垂直側提供至待退火物之結構示意圖。圖8為由圖7另一視角所得之示意圖。本發明之第四實施例與第三實施例之差異在於第四實施例之微波功率源系統30係具有雙微波產生器(即兩個微波產生器32),其中雙微波產生器係產生雙微波且從共振腔34之兩相對方向分別導入共振腔34中,藉以將雙微波導引至待退火物100之第一區域110上,使得待退火物100之第一區域110受熱均勻。Please refer to FIG. 1 , FIG. 2 , FIG. 7 and FIG. 8 . FIG. 7 is a schematic diagram of the structure of microwave energy and laser energy supplied to the object to be annealed from the vertical side in the annealing system of the fourth embodiment of the present invention. FIG. 8 is a schematic diagram obtained from another viewing angle of FIG. 7 . The difference between the fourth embodiment of the present invention and the third embodiment is that the microwave power source system 30 of the fourth embodiment has dual microwave generators (i.e. two microwave generators 32), wherein the dual microwave generators generate dual microwave And the two opposite directions of the resonant cavity 34 are respectively introduced into the resonant cavity 34, so as to guide the double microwaves to the first region 110 of the object to be annealed 100, so that the first region 110 of the object to be annealed 100 is evenly heated.

在上述之各實施例中,本發明之載台150例如具有承載基座160,用以承載待退火物100。承載基座160並不侷限於特定材質,其可由任何合適之材質組成,且承載基座160之外型也無特別限定,其可為板狀、槽狀或盒狀,只要能夠承載待退火物100,均可適用於本發明。舉例而言,承載基座160可由微波吸收材料構成,且可允許超過50%的微波穿透以加熱待退火物100。孔隙率為 20% 至 30% 的多孔性、燒結而成的碳化矽是一種合適的承載基座160之材料,對於燒結製造的多孔性碳化矽穿透深度更大,可以達到上述承載基座160的功能,同時它可以多次加熱和冷卻而不會破裂,使用壽命長。另外亦可使用石墨做為承載基座160的材料。以待退火物100為碳化矽晶圓為例,由於碳化矽晶圓的厚度很薄,如果直接暴露在微波中,其邊緣很容易產生高電場強度的分佈,會造成過熱甚至尖端放電。因此承載基座160可為包覆待退火之碳化矽晶圓之邊緣,藉以防止碳化矽晶圓邊緣過熱的現象。舉例而言,承載基座160例如為包含底座及上蓋,其中上蓋係例如可拆卸式覆蓋於底座上,藉以圍繞出容室,待退火物100係可卸式定位於底座及上蓋所圍繞出之容室中。上述雖舉例承載基座160作說明,惟其並非用以限定本發明,只要承載基座160可供放置待退火物100,即屬於本發明請求保護之範圍。In the above-mentioned embodiments, the carrier 150 of the present invention, for example, has a carrier base 160 for carrying the object to be annealed 100 . The bearing base 160 is not limited to a specific material, it can be made of any suitable material, and the shape of the bearing base 160 is not particularly limited, it can be a plate shape, a groove shape or a box shape, as long as it can carry the object to be annealed 100, can be applicable to the present invention. For example, the carrying base 160 may be made of a microwave absorbing material, and allow more than 50% of the microwave to penetrate to heat the object to be annealed 100 . Porosity and sintered silicon carbide with a porosity of 20% to 30% is a suitable material for the supporting base 160. The porous silicon carbide manufactured by sintering has a greater penetration depth and can reach the above-mentioned supporting base 160. function, at the same time it can be heated and cooled many times without cracking, and has a long service life. In addition, graphite can also be used as the material of the supporting base 160 . Taking the silicon carbide wafer as an example of the object to be annealed 100, since the thickness of the silicon carbide wafer is very thin, if it is directly exposed to microwaves, it is easy to generate a high electric field intensity distribution at its edge, which will cause overheating and even tip discharge. Therefore, the supporting base 160 can cover the edge of the silicon carbide wafer to be annealed, so as to prevent the edge of the silicon carbide wafer from overheating. For example, the carrying base 160 includes a base and an upper cover, wherein the upper cover is detachably covered on the base so as to surround the chamber, and the object to be annealed 100 is detachably positioned on the base and the upper cover surrounded by it. In the containment room. Although the carrying base 160 is used for illustration above, it is not intended to limit the present invention. As long as the carrying base 160 can place the object to be annealed 100, it belongs to the protection scope of the present invention.

此外,在上述之各較佳實施例中,如圖9所示,本發明之退火裝置更可例如包含一熱源,用以在進行上述之退火程序時加熱待退火物100。其中,熱源例如為雷射加熱源系統50、微波功率源系統30、加熱液體槽90、另一雷射加熱源系統及/或一紅外光源。以熱源為加熱液體槽90為例,加熱液體槽90中係具有一液體92,以使待退火物100浸泡於液體92中。加熱液體槽90可例如為熱油槽且係具有一油,較佳為一熱油,更佳為耐高溫油,例如氟素油,且在上述之退火程序之全部步驟或部分步驟中,待退火物100可浸泡於油中,藉此可減少熱衝擊產生不必要的裂縫或裂縫擴大,並能增加熱均勻性,另,加熱液體槽90中也可不限於上述之油,也可視需求選擇可加熱之液體放於槽中作為熱源。In addition, in each of the above-mentioned preferred embodiments, as shown in FIG. 9 , the annealing device of the present invention may further include, for example, a heat source for heating the object to be annealed 100 when performing the above-mentioned annealing procedure. Wherein, the heat source is, for example, a laser heating source system 50 , a microwave power source system 30 , a heating liquid tank 90 , another laser heating source system and/or an infrared light source. Taking the heat source as the heating liquid tank 90 as an example, there is a liquid 92 in the heating liquid tank 90 so that the object to be annealed 100 is immersed in the liquid 92 . The heating liquid tank 90 can be, for example, a hot oil tank and has an oil, preferably a hot oil, more preferably a high temperature resistant oil, such as fluorine oil, and in all or some steps of the above-mentioned annealing procedure, the object to be annealed 100 can be soaked in oil, which can reduce unnecessary cracks or crack expansion caused by thermal shock, and can increase thermal uniformity. In addition, the heating liquid tank 90 is not limited to the above-mentioned oil, and can also be selected according to requirements. The liquid is placed in the tank as a heat source.

綜上所述,本發明之整合雷射與微波的退火系統及退火方法,具有以下優點:In summary, the annealing system and annealing method integrating laser and microwave of the present invention have the following advantages:

(1) 本發明以微波能量及雷射能量進行協同式退火程序,有助於結合微波退火及雷射退火之優點。(1) The present invention uses microwave energy and laser energy to carry out a synergistic annealing procedure, which helps to combine the advantages of microwave annealing and laser annealing.

(2) 藉由微波能量升高退火物之溫度,有助於增加待退火物的雷射能量吸收率,故可降低進行雷射退火程序所需提供之雷射能量,或是可以減少整體退火所需時間。(2) Using microwave energy to increase the temperature of the annealed object helps to increase the laser energy absorption rate of the annealed object, so it can reduce the laser energy required for the laser annealing process, or reduce the overall annealing time required.

(3) 藉由微波能量升高待退火物之第二區域與其他區域(非第二區域)之溫度,可降低此兩區域的溫度差(Thermal Shock),以避免應力差異大而產生裂縫或缺陷。(3) By using microwave energy to increase the temperature of the second area and other areas (not the second area) of the object to be annealed, the temperature difference between the two areas (Thermal Shock) can be reduced to avoid cracks or cracks caused by large stress differences. defect.

(4) 本發明以微波能量對待退火物整體作退火,可避免溫度梯度大而產生缺陷,還能解決注入離子過度擴散的問題。(4) The present invention uses microwave energy to anneal the whole object to be annealed, which can avoid defects caused by large temperature gradients, and can also solve the problem of excessive diffusion of implanted ions.

(5) 本發明以微波能量對待退火物整體作退火,並選擇特定的雷射波長對應退火目標,可選擇性對特定深度的區域做雷射退火。(5) The present invention uses microwave energy to anneal the entire object to be annealed, and selects a specific laser wavelength corresponding to the annealing target, and can selectively perform laser annealing on a specific depth area.

以上所述僅為舉例性,而非為限制性者。任何未脫離本發明之精神與範疇,而對其進行之等效修改或變更,均應包含於後附之申請專利範圍中。The above descriptions are illustrative only, not restrictive. Any equivalent modification or change made without departing from the spirit and scope of the present invention shall be included in the scope of the appended patent application.

10:退火系統 30:微波功率源系統 31:金屬桿 32:微波產生器 33:微波 34:共振腔 35:開口 36:隔離器 38:匹配器 38a:同軸管 38b:金屬板 38c:金屬桿 50:雷射加熱源系統 52:雷射產生器 54:雷射 56:透鏡組 70:微波吸收元件 80:測控系統 82:測溫裝置 84:功率量測裝置 84a:方向耦合器 84b:功率計 86:控制裝置 90:加熱液體槽 92:液體 100:待退火物 110:第一區域 120:第二區域 150:載台 160:承載基座 L1:橫向雙箭頭 L2:縱向雙箭頭 C1:橫向雙箭頭 C2:縱向雙箭頭 S10:進行微波退火程序 S20:進行雷射退火程序 S30:進行測控程序 D1:第一軸向 D2:第二軸向 10: Annealing system 30:Microwave power source system 31: metal rod 32:Microwave generator 33: microwave 34: Resonant cavity 35: opening 36: Isolator 38: Matcher 38a: coaxial tube 38b: metal plate 38c: metal rod 50:Laser heating source system 52:Laser generator 54:Laser 56: Lens group 70:Microwave absorbing element 80:Measurement and control system 82:Temperature measuring device 84: Power measurement device 84a: Directional coupler 84b:Power meter 86: Control device 90: Heated liquid tank 92: liquid 100: object to be annealed 110: The first area 120: Second area 150: carrier 160: carrying base L1: horizontal double arrow L2: vertical double arrow C1: Horizontal double arrow C2: vertical double arrow S10: Perform microwave annealing procedure S20: Perform laser annealing procedure S30: Carry out measurement and control program D1: the first axis D2: second axis

圖1為本發明之整合雷射與微波的退火方法之運作示意圖。FIG. 1 is a schematic diagram of the operation of the integrated laser and microwave annealing method of the present invention.

圖2為本發明之整合雷射與微波的退火系統之運作流程圖。FIG. 2 is a flowchart of the operation of the integrated laser and microwave annealing system of the present invention.

圖3為本發明之整合雷射與微波的退火系統之系統示意圖。FIG. 3 is a system schematic diagram of an annealing system integrating laser and microwave according to the present invention.

圖4為本發明之第一實施例之退火系統之結構示意圖。FIG. 4 is a schematic structural view of the annealing system of the first embodiment of the present invention.

圖5為本發明之第二實施例之退火系統之結構示意圖。FIG. 5 is a schematic structural view of an annealing system according to a second embodiment of the present invention.

圖6為本發明之第三實施例之退火系統之結構示意圖。FIG. 6 is a schematic structural view of an annealing system according to a third embodiment of the present invention.

圖7為本發明之第四實施例之退火系統之結構示意圖。FIG. 7 is a schematic structural view of an annealing system according to a fourth embodiment of the present invention.

圖8為由圖7另一視角所得之示意圖。FIG. 8 is a schematic diagram obtained from another viewing angle of FIG. 7 .

圖9為本發明之退火裝置於熱源中進行退火之示意圖。Fig. 9 is a schematic diagram of the annealing device of the present invention performing annealing in a heat source.

10:退火系統 10: Annealing system

30:微波功率源系統 30:Microwave power source system

50:雷射加熱源系統 50:Laser heating source system

80:測控系統 80:Measurement and control system

82:測溫裝置 82:Temperature measuring device

84:功率量測裝置 84: Power measurement device

84a:方向耦合器 84a: Directional coupler

84b:功率計 84b:Power meter

86:控制裝置 86: Control device

100:待退火物 100: object to be annealed

Claims (26)

一種整合雷射與微波的退火系統,包含: 一微波功率源系統,該微波功率源系統係提供一微波能量予一待退火物之一第一區域,藉以退火該待退火物之該第一區域; 一雷射加熱源系統,該雷射加熱源系統係提供一雷射能量予該待退火物之一第二區域,藉以退火該待退火物之該第二區域;以及 一測控系統,該測控系統係包含一測溫裝置、一功率量測裝置及一控制裝置,該測溫裝置係監測該待退火物之一溫度值,該功率量測裝置係量測該微波功率源系統提供該微波能量及該雷射加熱源系統提供該雷射能量之至少一者之一功率變化,其中該控制裝置係依據該溫度值及該功率變化對應地調整該微波功率源系統提供該微波能量之一第一功率及/或調整該雷射加熱源系統提供該雷射能量之一第二功率。 An annealing system integrating laser and microwave, including: A microwave power source system that provides a microwave energy to a first region of an object to be annealed, thereby annealing the first region of the object to be annealed; A laser heating source system, which provides a laser energy to a second region of the object to be annealed, thereby annealing the second region of the object to be annealed; and A measurement and control system, the measurement and control system includes a temperature measurement device, a power measurement device and a control device, the temperature measurement device monitors a temperature value of the object to be annealed, the power measurement device measures the microwave power A power change of at least one of the microwave energy provided by the source system and the laser heating source system provided by the laser energy, wherein the control device adjusts the microwave power source system to provide the microwave power correspondingly according to the temperature value and the power change A first power of microwave energy and/or adjusting the laser heating source system to provide a second power of laser energy. 如請求項1所述之整合雷射與微波的退火系統,其中該第一區域係包含該第二區域。The integrated laser and microwave annealing system as claimed in claim 1, wherein the first region includes the second region. 如請求項1所述之整合雷射與微波的退火系統,其中該微波功率源系統係整體式提供該微波能量予該待退火物之該第一區域,該雷射加熱源系統係掃描式提供該雷射能量予該待退火物之該第二區域。The integrated laser and microwave annealing system as described in Claim 1, wherein the microwave power source system provides the microwave energy to the first region of the object to be annealed integrally, and the laser heating source system provides scanning The laser energy is given to the second region of the object to be annealed. 如請求項1、2或3所述之整合雷射與微波的退火系統,其中該微波功率源系統提供該微波能量予該第一區域之一第一時間區間係涵蓋該雷射加熱源系統提供該雷射能量予該第二區域之一第二時間區間。The integrated laser and microwave annealing system as described in claim 1, 2 or 3, wherein the microwave power source system provides the microwave energy to the first region for a first time interval covering the laser heating source system The laser energy is given to a second time interval in the second area. 如請求項1、2或3所述之整合雷射與微波的退火系統,其中該雷射加熱源系統提供該雷射能量予該第二區域之一第二時間區間係涵蓋該微波功率源系統提供該微波能量予該第一區域之一第一時間區間。The integrated laser and microwave annealing system as described in claim 1, 2 or 3, wherein the laser heating source system provides the laser energy to the second region for a second time interval covering the microwave power source system The microwave energy is provided to the first region for a first time interval. 如請求項1所述之整合雷射與微波的退火系統,其中該微波功率源系統所提供之該微波能量係沿著一第一軸向提供予該第一區域,該雷射加熱源系統所提供之該雷射能量係沿著一第二軸向提供予該第二區域,該第一軸向與該第二軸向之夾角之範圍為0度至180度。The integrated laser and microwave annealing system as described in Claim 1, wherein the microwave energy provided by the microwave power source system is provided to the first region along a first axis, and the laser heating source system is provided The laser energy provided is provided to the second region along a second axis, and the included angle between the first axis and the second axis ranges from 0° to 180°. 如請求項1所述之整合雷射與微波的退火系統,其中該雷射加熱源系統包含一雷射產生器及一透鏡組,該雷射產生器係產生一雷射,該透鏡組係將該雷射導引至該待退火物之該第二區域上。An annealing system integrating laser and microwave as described in Claim 1, wherein the laser heating source system includes a laser generator and a lens group, the laser generator generates a laser, and the lens group will The laser is directed onto the second region of the object to be annealed. 如請求項7所述之整合雷射與微波的退火系統,其中該微波功率源系統包含至少一微波產生器及一共振腔,該微波產生器係產生一微波,且該共振腔係將該微波導引至該待退火物之該第一區域上。An annealing system integrating laser and microwave as described in Claim 7, wherein the microwave power source system includes at least one microwave generator and a resonant cavity, the microwave generator generates a microwave, and the resonant cavity is the microwave directed onto the first region of the object to be annealed. 如請求項6所述之整合雷射與微波的退火系統,其中該微波功率源系統與該雷射加熱源系統係從該待退火物之相對側分別提供該微波能量與該雷射能量。The integrated laser and microwave annealing system as described in Claim 6, wherein the microwave power source system and the laser heating source system respectively provide the microwave energy and the laser energy from opposite sides of the object to be annealed. 如請求項6所述之整合雷射與微波的退火系統,其中該微波功率源系統與該雷射加熱源系統係由該待退火物之同一側分別提供該微波能量與該雷射能量。The integrated laser and microwave annealing system as described in Claim 6, wherein the microwave power source system and the laser heating source system respectively provide the microwave energy and the laser energy from the same side of the object to be annealed. 如請求項8所述之整合雷射與微波的退火系統,其中該雷射加熱源系統之該透鏡組係同軸式設於該微波功率源系統之該共振腔上,藉以將該雷射導引至該待退火物之該第二區域上。The integrated laser and microwave annealing system as described in Claim 8, wherein the lens group of the laser heating source system is coaxially arranged on the resonant cavity of the microwave power source system, so as to guide the laser onto the second region of the object to be annealed. 如請求項6所述之整合雷射與微波的退火系統,其中該微波功率源系統與該雷射加熱源系統係從該待退火物之垂直側分別提供該微波能量與該雷射能量予該待退火物。The integrated laser and microwave annealing system as described in Claim 6, wherein the microwave power source system and the laser heating source system respectively provide the microwave energy and the laser energy to the object from the vertical side of the object to be annealed to be annealed. 如請求項6所述之整合雷射與微波的退火系統,其中該微波功率源系統包含兩微波產生器及一共振腔,該兩微波產生器係產生兩微波,該共振腔係從該第一軸向之兩相對方向分別將該兩微波導引至該待退火物之該第一區域上。An annealing system integrating laser and microwave as described in Claim 6, wherein the microwave power source system includes two microwave generators and a resonant cavity, the two microwave generators generate two microwaves, and the resonant cavity is obtained from the first Two opposite axial directions guide the two microwaves to the first region of the object to be annealed respectively. 如請求項6、9、10、12或13所述之整合雷射與微波的退火系統,更包含一微波吸收元件,該微波吸收元件與該微波功率源系統係位於該待退火物之相對側。The integrated laser and microwave annealing system as described in claim 6, 9, 10, 12 or 13 further comprises a microwave absorbing element, the microwave absorbing element and the microwave power source system are located on opposite sides of the object to be annealed . 如請求項8或13所述之整合雷射與微波的退火系統,其中該微波功率源系統之該共振腔貫穿有一開口,該待退火物係藉由該開口於該共振腔中移動位置以接收該微波能量。The annealing system integrating laser and microwave as described in claim 8 or 13, wherein the resonant cavity of the microwave power source system runs through an opening, and the object to be annealed is moved in the resonant cavity through the opening to receive the microwave energy. 如請求項1所述之整合雷射與微波的退火系統,其中該功率量測裝置係量測該微波功率源系統以一微波提供該微波能量及該雷射加熱源系統以一雷射提供該雷射能量之該至少一者之一前進訊號及/或一反射訊號,藉以獲得該功率變化。The integrated laser and microwave annealing system as described in Claim 1, wherein the power measurement device measures the microwave power source system provides the microwave energy with a microwave and the laser heating source system provides the microwave energy with a laser A forward signal and/or a reflected signal of the at least one of laser energy to obtain the power variation. 如請求項1所述之整合雷射與微波的退火系統,其中該功率量測裝置包含量測該微波功率源系統以一微波提供該微波能量之一前進訊號及一反射訊號之至少一者以及該雷射加熱源系統以一雷射提供該雷射能量之一前進訊號及一反射訊號之至少一者。The integrated laser and microwave annealing system as described in Claim 1, wherein the power measuring device includes measuring at least one of a forward signal and a reflected signal of the microwave energy provided by the microwave power source system and The laser heating source system uses a laser to provide at least one of a forward signal and a reflected signal of the laser energy. 如請求項8或13所述之整合雷射與微波的退火系統,其中該微波功率源系統還包含一隔離器及一匹配器設於該微波產生器及該共振腔之間。The integrated laser and microwave annealing system as described in claim 8 or 13, wherein the microwave power source system further includes an isolator and a matching device arranged between the microwave generator and the resonant cavity. 如請求項1所述之整合雷射與微波的退火系統,其中該第一區域或該第二區域係位於該待退火物之一深度中或一表面上。The integrated laser and microwave annealing system as described in claim 1, wherein the first region or the second region is located in a depth or on a surface of the object to be annealed. 一種整合雷射與微波的退火方法,包含: 進行一微波退火程序,藉以利用一微波功率源系統以一微波能量退火一待退火物之一第一區域; 進行一雷射退火程序,藉以利用一雷射加熱源系統以一雷射提供一雷射能量予於該待退火物之一第二區域;以及 進行一測控程序,其係量測並依據該待退火物之一溫度值、該微波功率源系統提供該微波能量及該雷射加熱源系統提供該雷射能量之至少一者之一功率變化,藉以對應地調整該微波功率源系統提供該微波能量之一第一功率及/或該雷射加熱源系統提供該雷射能量之一第二功率。 An annealing method integrating laser and microwave, comprising: performing a microwave annealing procedure whereby a first region of an object to be annealed is annealed with a microwave energy using a microwave power source system; performing a laser annealing process, whereby a laser heating source system is used to provide a laser energy to a second region of the object to be annealed; and Carrying out a measurement and control program, which is to measure and depend on a power change of at least one of the temperature value of the object to be annealed, the microwave energy provided by the microwave power source system, and the laser energy provided by the laser heating source system, Thereby correspondingly adjusting the microwave power source system to provide the first power of the microwave energy and/or the laser heating source system to provide the second power of the laser energy. 如請求項20所述之整合雷射與微波的退火方法,其中該第一區域係包含該第二區域。The integrated laser and microwave annealing method as claimed in claim 20, wherein the first region includes the second region. 如請求項20所述之整合雷射與微波的退火方法,其中該微波功率源系統係整體式提供該微波能量予該待退火物之該第一區域,該雷射加熱源系統係掃描式提供該雷射能量予該待退火物之該第二區域。The integrated laser and microwave annealing method as described in Claim 20, wherein the microwave power source system provides the microwave energy to the first region of the object to be annealed in an integrated manner, and the laser heating source system provides scanning The laser energy is given to the second region of the object to be annealed. 如請求項20、21或22所述之整合雷射與微波的退火方法,其中該微波功率源系統提供該微波能量予該第一區域之一第一時間區間係涵蓋該雷射加熱源系統提供該雷射能量予該第二區域之一第二時間區間。The annealing method integrating laser and microwave as described in claim 20, 21 or 22, wherein the microwave power source system provides the microwave energy to the first region for a first time interval covering the laser heating source system provided The laser energy is given to a second time interval in the second area. 如請求項20、21或22所述之整合雷射與微波的退火方法,其中該雷射加熱源系統提供該雷射能量予該第二區域之一第二時間區間係涵蓋該微波功率源系統提供該微波能量予該第一區域之一第一時間區間。The integrated laser and microwave annealing method as described in claim 20, 21 or 22, wherein the laser heating source system provides the laser energy to the second region for a second time interval covering the microwave power source system The microwave energy is provided to the first region for a first time interval. 如請求項20所述之整合雷射與微波的退火方法,其中該微波功率源系統係沿著一第一軸向提供該微波能量予該第一區域,該雷射加熱源系統係沿著一第二軸向提供該雷射能量予該第二區域,該第一軸向與該第二軸向之夾角之範圍為0度至180度。The integrated laser and microwave annealing method as described in claim 20, wherein the microwave power source system provides the microwave energy to the first region along a first axis, and the laser heating source system is along a The second axis provides the laser energy to the second region, and the angle between the first axis and the second axis ranges from 0° to 180°. 如請求項25所述之整合雷射與微波的退火方法,其中該微波功率源系統係從該第一軸向之兩相對方向提供該微波能量予該第一區域。The integrated laser and microwave annealing method as described in claim 25, wherein the microwave power source system provides the microwave energy to the first region from two opposite directions of the first axis.
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