TW202238809A - Wafer carrier capable of accurately adjusting temperature and thin film deposition device using the same - Google Patents

Abstract

The invention is a wafer carrier capable of accurately adjusting temperature, which mainly includes a carrying unit, a heating unit, a cooling unit, a heat conducting plate, a temperature sensing unit and a control unit. The heating unit includes a first and a second heating coil, and the cooling unit and the heating unit are stacked. The heat conduction plate is located between the cooling unit and the heating unit, and includes at least one protrusion or at least one perforation or at least one depression, so that there is at least one isolation space between the heating unit and the cooling unit disposed on both sides of the heat conduction plate. The control unit adjusts the flow rate of the cooling fluid conveyed by the cooling unit and the heating efficiency of the first and second heating coils according to the temperature sensed by the temperature sensing unit, so that the carrying unit generates a uniform and accurate temperature.

Description

Sustaining disc capable of accurately adjusting temperature and thin film deposition device using the same

The present invention relates to a carrier plate capable of accurately adjusting the temperature, especially to a film deposition device using the carrier plate, which can adjust the temperature of each area of the carrier plate according to the measured temperature, so that the carrier plate can produce uniform and accurate temperature.

Chemical Vapor Deposition (CVD), Physical Vapor Deposition (PVD) and Atomic Layer Deposition (ALD) are commonly used thin film deposition equipment, and are widely used in the manufacturing processes of integrated circuits, light-emitting diodes and displays.

The deposition equipment mainly includes a cavity and a carrier plate, wherein the carrier plate is located in the cavity and is used to carry at least one wafer. Taking physical vapor deposition as an example, a target needs to be set in the chamber, wherein the target faces the wafer on the carrier. During physical vapor deposition, the inert gas and/or reaction gas can be delivered into the chamber, and bias voltages are applied to the target and the carrier plate respectively, wherein the carrier plate also heats the loaded wafer. The inert gas in the chamber will form an ionized inert gas due to the action of the high-voltage electric field. The ionized noble gas is attracted by the bias voltage on the target and bombards the target. Target atoms or molecules sputtered from the target are attracted by the bias voltage on the susceptor plate and deposited on the surface of the heated wafer to form a thin film on the surface of the wafer.

Specifically, the bias voltage and temperature stability generated by the susceptor will have a considerable impact on the film deposition quality on the wafer surface. Therefore, how to make the susceptor produce stable temperature and bias is an important aspect in the thin film deposition process. one of the subjects.

As mentioned in the prior art, it is usually necessary to heat the susceptor during the deposition process to deposit a film on the surface of the wafer and improve the uniformity of the film deposited on the surface of the wafer. To this end, the present invention proposes a novel susceptor, which mainly adjusts the temperature of different regions of the susceptor based on the temperature of the susceptor measured by the temperature sensing unit, so that the susceptor can reach the preset temperature quickly and accurately, so as to improve the wafer temperature. The uniformity of the film formed on the surface.

An object of the present invention is to provide a carrier plate capable of accurately adjusting temperature, which mainly includes at least one heating unit, at least one cooling unit, a heat conduction plate and at least one temperature sensing unit. The heating unit, the heat conduction plate and the cooling unit are stacked, and the heat conduction plate is located between the heating unit and the cooling unit. The heating unit is closer to the wafer carried by the susceptor and used to increase the temperature of the wafer, while the cooling unit is farther away from the wafer carried by the susceptor and used to lower the temperature of the wafer.

In addition, the heat conduction plate includes at least one protrusion and/or at least one perforation portion and/or at least one depression, so that when the cooling unit is connected to the heating unit through the heat conduction plate, at least one isolation space will be formed between the cooling unit and the heating unit, In order to reduce the contact area between the heat conduction plate and the heating unit and the cooling unit. The arrangement of the heat conduction plate can prevent the cooling unit from absorbing too much heat from the heating unit, so that the heating unit cannot effectively increase the temperature of the carrier plate and the wafer.

An object of the present invention is to provide a carrier tray capable of accurately adjusting temperature, which mainly includes at least one heating unit, at least one cooling unit and at least one temperature sensing unit, wherein the cooling unit includes a first cooling pipeline. The heating unit includes two heating coils, which are respectively arranged on the radially inner area and the radially outer area of the carrier plate.

A control unit is electrically connected to the temperature sensing unit, and according to the temperature measured by the temperature sensing unit and a preset temperature, respectively adjusts the flow rate and/or temperature of the cooling fluid delivered by the first cooling pipeline, and adjusts the input of the two heating The magnitude of the power signal of the coil makes the carrier plate reach the preset temperature quickly and accurately.

An object of the present invention is to provide a carrier tray that can accurately adjust the temperature, wherein the first cooling pipeline is respectively connected to a first input pipeline and a first output pipeline, and a first cooling fluid is delivered to the first cooling fluid through the first input pipeline. The first cooling line then outputs the first cooling fluid out of the first cooling line via the first output line.

In addition, a cooling jacket is sheathed on the first output pipeline, wherein the cooling jacket is connected to the second input pipeline and the second output pipeline. The second input pipeline delivers a second cooling fluid to the cooling jacket, and the second cooling fluid is output from the cooling jacket through the second output pipeline, so as to reduce the temperature of the first cooling fluid in the first output pipeline, so that the connecting second The flow detector of an output pipeline will not be damaged due to the high temperature of the first cooling fluid.

In order to achieve the above object, the present invention proposes a carrier tray capable of accurately adjusting temperature, comprising: a carrier unit including a carrier surface for carrying at least one wafer; at least one heating unit including at least a first heating coil and at least A second heating coil, wherein the first heating coil is arranged on a radially outer region of the carrier plate, and the second heating coil is arranged on a radially inner region of the carrier plate, and the first heating coil and the second heating coil The coils are independently heated; at least one cooling unit includes at least one first cooling pipeline for transporting a first cooling fluid, wherein the heating unit and the cooling unit are stacked, and the heating unit is closer to the bearing surface of the bearing unit than the cooling unit; a heat conduction The plate is located between the cooling unit and the heating unit, and includes at least one raised portion or at least one perforated portion or at least one recessed portion, so that there is at least one isolation space between the heating unit and the cooling unit disposed on both sides of the heat conduction plate; At least one temperature sensing unit is arranged on the carrying unit and used to measure the temperature of the carrying unit; and a control unit is electrically connected to the temperature sensing unit and adjusts the temperature sent to the first temperature sensing unit according to the temperature measured by the temperature sensing unit. The flow rate of the first cooling fluid in the cooling line.

The present invention provides a thin film deposition device, comprising: a cavity, including an accommodating space; a carrying tray, located in the accommodating space, including: a carrying unit, including a carrying surface for carrying at least one wafer; at least one The heating unit includes at least one first heating coil and at least one second heating coil, wherein the first heating coil is arranged on a radially outer side of the carrier plate, and the second heating coil is arranged on a radially closer side of the carrier plate The inner area, and the first heating coil and the second heating coil are independently heated; at least one cooling unit includes at least one first cooling pipeline for delivering a first cooling fluid, wherein the heating unit and the cooling unit are stacked, and the heating unit The cooling unit is closer to the bearing surface of the bearing unit; a heat conduction plate is located between the cooling unit and the heating unit, and includes at least one protrusion or at least one perforation or at least one depression or at least one depression, so that it is arranged on the heat conduction plate There is at least one isolation space between the heating unit and the cooling unit on both sides of the disk; at least one temperature sensing unit is arranged on the carrying unit to measure the temperature of the carrying unit; and a control unit is electrically connected to the temperature sensing unit , and adjust the flow rate of the first cooling fluid delivered to the first cooling pipeline according to the temperature measured by the temperature sensing unit; and at least one air inlet, fluidly connected to the accommodation space of the cavity, and used to deliver a process gas to the storage space.

In the carrier plate and film deposition device, the cooling unit includes at least one second cooling pipeline for delivering a second cooling fluid, and the first cooling pipeline is arranged around the outer side of the second cooling pipeline.

The carrier plate and film deposition device include a first input pipeline, a first output pipeline and a first flow control valve, the first input pipeline and the first output pipeline are connected to the first cooling pipeline, and the first flow control valve The first input line is fluidly connected, and the control unit controls the first flow control valve according to the temperature measured by the temperature sensing unit, so as to adjust the flow rate of the first cooling fluid delivered by the first input line to the first cooling line.

The carrier plate and film deposition device include: a first input pipeline connected to the first cooling pipeline; a first output pipeline connected to the first cooling pipeline, wherein the first input pipeline inputs the first cooling fluid into the first cooling A pipeline, and the first cooling fluid is output from the first cooling pipeline through the first output pipeline; a cooling jacket is arranged on the first output pipeline and contacts the first output pipeline; a second input pipeline is connected to the cooling jacket; a The second output pipeline is connected to the cooling jacket, wherein the second input pipeline delivers a second cooling fluid to the cooling jacket, and the second cooling fluid is output from the cooling jacket through the second output pipeline to reduce the first cooling fluid through the cooling jacket. The temperature of the first cooling fluid output by the output line.

According to the carrier plate and thin film deposition device, the control unit adjusts the magnitude of a power signal input to the first heating coil and the second heating coil respectively according to the temperature sensed by the temperature sensing unit.

The thin film deposition device includes a support connected to drive the displacement of the carrier plate, and the first input pipeline, the first output pipeline, the cooling jacket, the second input pipeline and the second output pipeline are located in the support.

Please refer to FIG. 1 to FIG. 3 , which are respectively a schematic cross-sectional view, an exploded schematic cross-sectional view and a top perspective view of an embodiment of a carrier tray capable of accurately adjusting temperature according to the present invention. As shown in the figure, the carrier plate 10 is used to carry at least one wafer 12, and mainly includes a carrier unit 11, at least one heating unit 13, a heat conduction plate 14, at least one cooling unit 15, at least one temperature sensing unit 17 and a The control unit 19, wherein the carrying unit 11 includes a carrying surface 111 for carrying the wafer 12, for example, the carrying unit 11 may be a titanium disc. The heating unit 13 and the cooling unit 15 are stacked, and the heat conduction plate 14 is located between the heating unit 13 and the cooling unit 15 , wherein the heating unit 13 is closer to the carrying surface 111 of the carrying unit 11 and the wafer 12 carried than the cooling unit 15 .

The heating unit 13 includes at least one first heating coil 131 and at least one second heating coil 133 , wherein the first heating coil 131 and the second heating coil 133 may be heating wires. In use, a current can be input into the first heating coil 131 and the second heating coil 133 respectively, and the carrier plate 10 and/or the carrier unit 11 can be heated by resistance heating through the first heating coil 131 and the second heating coil 133 . In another embodiment of the present invention, the first and second heating coils 131/133 may be induction coils.

The carrier plate 10 may be disc-shaped, wherein the first heating coil 131 is disposed on a radially outer region 101 of the carrier plate 10, and the second heating coil 133 is disposed on a radially inner region 103 of the carrier plate 10, The appearance of the radially outer region 101 and the radially inner region 103 is not necessarily circular or annular.

In actual application, a first power signal can be sent to the first heating coil 131, and a second power signal can be sent to the second heating coil 133, wherein the first power signal and the second power signal can be independent signals, And the heating efficiency of the first heating coil 131 and the second heating coil 133 can be adjusted respectively to change the radially outer zone 101 on the outer side (outer ring) of the carrier plate 10 and the radially inner area on the inner side (inner ring) 103 temperature.

The first heating coil 131 and the second heating coil 133 may have a plurality of bent portions, so as to increase the radially outer area 101 and the radially inner area 103 between the first heating coil 131 and the second heating coil 133 and the carrier plate 10 the contact area.

In practical applications, part of the first heating coil 131 may extend to the radially inner region 103 , while part of the second heating coil 133 may extend to the radially outer region 101 . Therefore, the scope of rights of the present invention is not limited to the fact that all the first heating coils 131 are located in the radially outer region 101 , or that all the second heating coils 133 are located in the radially inner region 103 .

In the embodiment of the present invention, the cooling unit 15 includes a first cooling pipeline 151 and a second cooling pipeline 153, wherein the first cooling pipeline 151 is located at the radial outer area 101 of the carrier plate 10, and the second cooling pipeline 153 is It is located at the radial inner area 103 of the carrier plate 10 . The first cooling line 151 and the second cooling line 153 are pipes and used for transporting cooling fluid, such as water. In actual application, the cooling unit 15 may also only include the first cooling pipeline 151 .

The first cooling line 151 and the second cooling line 153 can be fluidly separated, wherein the first cooling line 151 is used to transport a first cooling fluid, while the second cooling line 153 is used to transport a second cooling fluid, and can be respectively The flow rates of the first cooling fluid and the second cooling fluid are controlled to adjust the cooling efficiency of the first cooling pipeline 151 and the second cooling pipeline 153 .

In the present invention, the heating unit 13 and the cooling unit 15 are mainly installed on the carrier plate 10 at the same time, so the temperature of the carrier plate 10 can be adjusted at a relatively fast speed, whether it is heating up or cooling down. In addition, the heating unit 13 respectively heats the temperature of different regions of the susceptor 10 through the first and second heating coils 131/133, and the cooling unit 15 respectively cools the temperature of different regions of the susceptor 10 through the first and second cooling lines 151/153. , can make the temperature of the carrier plate 10 more uniform and accurate.

The heat conduction plate 14 is located between the cooling unit 15 and the heating unit 13 , wherein the cooling unit 15 can reduce the temperature of the heating unit 13 and/or the carrying unit 11 through heat conduction through the heat conduction plate 14 . The heat conducting plate 14 can be made of a material with high thermal conductivity, such as metal.

In actual application, the cooling unit 15 often absorbs too much heat from the heating unit 13 and the carrier unit 11 through the heat conduction plate 14 , so that the heating unit 13 cannot effectively increase the temperature of the carrier unit 11 and the wafer 12 .

For this reason, the present invention designs the heat conduction plate 14 to have at least one raised portion 141 and/or at least one perforated portion 143 and/or at least one recessed portion, as shown in FIG. 4 , wherein the raised portion 141 and/or at least one through hole The portion 143 and/or at least one recessed portion is disposed on the surface of the heat conducting plate 14 in contact with the heating unit 13 and/or the cooling unit 15 . By providing the raised portion 141 and/or the perforated portion 143 and/or at least one recessed portion on the heat conduction plate 14, at least one isolation space 142 can be formed between the cooling unit 15 and the heating unit 13 disposed on both sides of the heat conduction plate 14 , and reduce the contact area between the cooling unit 15 and the heat conduction plate 14 , and reduce the contact area between the heat conduction plate 14 and the heating unit 13 .

Through the use of the heat conduction plate 14 , the excessive heat absorbed by the cooling unit 15 from the heating unit 13 and the carrier unit 11 via the heat conduction plate 14 can be reduced, and it is beneficial for the heating unit 13 to increase the temperature of the carrier unit 11 and/or the wafer 12 . In actual application, according to the requirements of the process temperature, different numbers and/or areas of raised portions 141 and/or perforated portions 143 can be selected on the heat conduction plate 14 to change the heat conduction plate 14 and cooling unit 15 and/or heating Contact area of unit 13.

The temperature sensing unit 17 is disposed in the susceptor 10 and used for measuring the temperature of the susceptor 10 . Specifically, the temperature sensing unit 17 can be disposed on the carrying unit 11 and close to the carrying surface 111 of the carrying unit 11 to accurately measure the temperature of the wafer 12 .

The control unit 19 is electrically connected to the temperature sensing unit 17 and receives the temperature measured by the temperature sensing unit 17 , wherein the control unit 19 may be a computer, a microprocessor, or the like. In addition, the control unit 19 can adjust the flow rate and/or temperature of the cooling fluid in the first cooling pipeline 151 and/or the second cooling pipeline 153 according to the temperature measured by the temperature sensing unit 17, so as to reduce the radially outer zone 101 and the diameter. to the temperature of the inner zone 103.

In one embodiment of the present invention, the first cooling pipeline 151 is fluidly connected to a first input pipeline 1511 and a first output pipeline 1513, wherein the first input pipeline 1511 delivers the first cooling fluid to the first cooling pipeline 151, and the first A cooling pipeline 151 delivers the first cooling fluid to the first output pipeline 1513 . The first input line 1511 can be fluidly connected to a first flow control valve 161 , and the control unit 19 can be connected to and control the first flow control valve 161 to adjust the flow of the first cooling fluid delivered to the first cooling line 151 . Specifically, the control unit 19 can control the first flow control valve 161 according to the temperature measured by the temperature sensing unit 17 to adjust the flow of the first cooling fluid delivered from the first input line 1511 to the first cooling line 151 . In addition, the control unit 19 can also adjust the flow rate of the second cooling fluid input into the second cooling pipeline 153 through a similar structure and method, and can reduce the temperature of different regions on the susceptor 10 respectively.

In addition, the control unit 19 can also adjust the magnitude of the power signal input to the first heating coil 131 and the second heating coil 133 according to the temperature measured by the temperature sensing unit 17, so as to adjust the first heating coil 131 and the second heating coil 133 respectively. heating efficiency.

In actual application, a preset temperature can be input to the control unit 19, and the control unit 19 can adjust the cooling efficiency of the first cooling pipeline 151 and the second cooling pipeline 153 according to the preset temperature and the temperature measured by the temperature sensing unit 17 , and adjust the heating efficiencies of the first heating coil 131 and the second heating coil 133 , so that the susceptor 10 , the susceptor unit 11 and the wafer 12 quickly reach the preset temperature.

In an embodiment of the present invention, the number of temperature sensing units 17 can be multiple, for example, the number of temperature sensing units 17 can be two, wherein the first and second temperature sensing units 171/173 are respectively arranged on the carrier The radially outer region 101 and the radially inner region 103 of the disc 10 and/or the carrier unit 11 .

In an embodiment of the present invention, the appearance of the carrying unit 11 can be a cover, and includes a setting space 110 . The heating unit 13, the heat conduction plate 14 and/or the cooling unit 15 can be arranged in the installation space 110 of the carrier unit 11, and the carrier unit 11 can be connected with a chassis 115 to cover the installation space 110 of the carrier unit 11, and the heating unit 13 , the heat conduction plate 14 and/or the cooling unit 15 are limited in the installation space 110 between the carrying unit 11 and the chassis 115 .

In another embodiment of the present invention, the carrier plate 10 may be provided with a conductive portion under the heating unit 13 and the cooling unit 15 , wherein the conductive portion may be a plate-shaped conductor. The conductive part can be connected with a bias power supply, and a bias voltage is formed on the conductive part through the bias power supply to attract the plasma above the wafer 12 . The bias power supply can be an AC power supply or a DC power supply, and is used to form an AC bias voltage or a DC bias voltage on the conductive part. In different embodiments, an insulating heat conduction unit may also be disposed between the conductive part and the heating unit 13 to electrically isolate the heating unit 13 and the conductive part.

Please refer to FIG. 5 and FIG. 6 , which are respectively a schematic cross-sectional view and a top perspective view of an embodiment of a carrier tray capable of accurately adjusting temperature according to the present invention. As shown in the figure, the carrier plate 30 is used to carry at least one wafer 12, and mainly includes a carrier unit 11, at least one heating unit 13, a heat conduction plate 14, at least one cooling unit 35, at least one temperature sensing unit 17 and a The control unit 19, wherein the carrying unit 11 includes a carrying surface 111 for carrying the wafer 12, for example, the carrying unit 11 may be a titanium plate. The heating unit 13 and the cooling unit 35 are stacked, and the heat conduction plate 14 is located between the heating unit 13 and the cooling unit 35 , wherein the heating unit 13 is closer to the carrying surface 111 of the carrying unit 11 and the wafer 12 carried than the cooling unit 35 .

In an embodiment of the present invention, the cooling unit 35 includes a first cooling pipeline 351, wherein the first cooling pipeline 351 is fluidly connected to a first input pipeline 3511 and a first output pipeline 3513, wherein the first input pipeline 3511 transfers the first cooling fluid to the first cooling line 351 , and the first cooling line 351 delivers the first cooling fluid to the first output line 3513 . The first cooling fluid delivered to the first cooling pipeline 351 absorbs heat from the heating unit 13 and the carrying unit 11 through the heat conduction plate 14 , so that the temperature of the cooling fluid output from the first output pipeline 3513 is higher than that of the first input pipeline 3511 .

Specifically, the range and/or area of the first cooling pipeline 351 distributed on the carrying unit 11 in the embodiment of the present invention is wider than that of the first cooling pipeline 151 , so the second cooling pipeline 153 does not need to be provided in the embodiment of the present invention.

In actual application, the first output pipeline 3513 is usually fluidly connected to a flow detector 3515, wherein the flow detector 3515 is used to detect the flow rate of the first cooling fluid on the first output pipeline 3513, so as to ensure that the first cooling fluid is in the first Normal flow in cooling line 351 . However, when the temperature of the first cooling fluid in the first output pipeline 3513 is too high, the flow detector 3515 will often be damaged.

In order to avoid the above situation, the present invention further arranges a cooling jacket 353 on the first output pipeline 3513, and makes the cooling jacket 353 contact the first output pipeline 3513, wherein the cooling jacket 353 is connected to a second input pipeline 3531 and a Second output line 3533 . The second input line 3531 delivers a second cooling fluid to the cooling jacket 353 , and the second cooling fluid outputs the cooling jacket 353 through the second output line 3533 . The second cooling fluid in the cooling jacket 353 contacts the first output pipeline 3513 and absorbs the heat of the first cooling fluid in the first output pipeline 3513 through heat conduction to reduce the first cooling fluid in the first output pipeline 3153. Cool the temperature of the fluid and avoid damage to the flow detector 3515.

Please refer to FIG. 7 , which is a schematic cross-sectional view of an embodiment of a thin film deposition device using a susceptor according to the present invention. As shown in the figure, the thin film deposition device 20 mainly includes at least one carrier plate 10/30 and a cavity 21, wherein the cavity 21 includes an accommodating space 26, and the carrier plate 10/30 is located in the accommodating space 26, and uses to carry at least one wafer 12 .

In an embodiment of the present invention, the thin film deposition device 20 may be a physical vapor deposition device, and a target 24 is disposed in the cavity 21 , wherein the target 24 faces the susceptor 10 / 30 and/or the wafer 12 . In an embodiment of the present invention, the cavity 21 may include a top plate 213 and a lower cavity 215, wherein the top plate 213 is connected to the lower cavity 215 through an insulating portion 217 to form an accommodating space 26 therebetween, and the target The material 24 is disposed on the top plate 213 and faces the susceptor 10 / 30 and/or the wafer 12 .

The chamber 21 is provided with at least one gas inlet 211, wherein the gas inlet 211 is fluidly connected to the accommodating space 26 of the chamber 21, and is used to transport a process gas into the accommodating space 26 to perform a deposition process. For example, the process gas can be Is an inert gas or reactive gas. In addition, a gas extraction port can also be provided on the cavity 21, and the gas in the cavity 21 can be drawn out through the pump through the gas extraction port.

The stopper 27 is disposed in the accommodating space 26 of the cavity 21 and located in the surrounding area of the carrier tray 10/30. Specifically, one end of the blocking member 27 is connected to the cavity 21 , and the other end forms an opening. In one embodiment of the present invention, an annular flange 271 can be formed at one end of the blocking member 27 that is not connected to the cavity 21, wherein the annular flange 271 is located around the opening of the blocking member 27, and the cover ring 25 can be arranged on the blocking member 27. On the annular flange 271.

The cavity 21 may include an inlet and outlet 212 for transporting the wafer 12 . The supporting plate 10 / 30 can be connected to a supporting member 23 , wherein the driving unit 28 is connected through the supporting member 23 and drives the supporting plate 10 / 30 to move relative to the blocking member 27 . In one embodiment of the present invention, a plurality of conductive circuits, first/second input pipelines 1511/3511/3531, cooling jacket 353, flow detector 3515, first/second output pipelines can be arranged in the support member 23 1513/3513/3533, signal transmission lines and/or heat transfer gas delivery pipelines 18, wherein the conductive lines are respectively connected and input power signals to the first heating coil 131 and the second heating coil 133, and the signal transmission lines are connected to the temperature sensing unit 17 and control unit 19.

In the embodiment of the present invention, the physical vapor deposition device is used as an embodiment of the invention, but the physical vapor deposition device is not a limitation of the scope of the present invention, and the carrier plate 10/30 described in the present invention can also be used in practical applications In the chemical vapor deposition device or the atomic layer deposition device, basically as long as the carrier plate 10/30 of the thin film deposition device needs to be heated and biased, the carrier plate 10/30 of the present invention is applicable.

The above is only one of the preferred embodiments of the present invention, and is not used to limit the scope of the present invention, that is, all changes and equal changes made according to the shape, structure, characteristics and spirit described in the patent scope of the present invention Modifications should be included in the patent application scope of the present invention.

10: carrying plate 101: radial outer area 103: radial inner area 11: Bearing unit 110: Setting space 111: bearing surface 115: Chassis 12:Wafer 13: Heating unit 131: the first heating coil 133: Second heating coil 14: Heat conduction plate 141: Raised part 142: Isolation space 143: Perforation 15: cooling unit 151: The first cooling pipeline 1511: First input pipeline 1513: first output pipeline 153: Second cooling pipeline 161: the first flow control valve 17: Temperature sensing unit 171: the first temperature sensing unit 173: the second temperature sensing unit 18: Heat transfer gas delivery pipeline 19: Control unit 20: Thin film deposition device 21: Cavity 211: air inlet 212: inlet and outlet 213: top plate 215: lower cavity 217: Insulation department 23: Support 24: target 25: cover ring 26:Accommodating space 27: block 271: ring flange 28: Drive unit 30: carrying plate 35: cooling unit 351: The first cooling pipeline 3511: first input pipeline 3513: First output pipeline 3515: flow detector 353: cooling jacket 3531: Second input pipeline 3533: Second output pipeline

[ FIG. 1 ] is a schematic cross-sectional view of an embodiment of a carrier plate capable of accurately adjusting temperature according to the present invention.

[ FIG. 2 ] is an exploded cross-sectional schematic view of an embodiment of the carrier plate capable of accurately adjusting the temperature of the present invention.

[ Fig. 3 ] is a top perspective view of an embodiment of the carrying tray capable of accurately adjusting the temperature of the present invention.

[ Fig. 4 ] is a top view of an embodiment of the heat conduction plate of the carrying plate capable of accurately adjusting the temperature of the present invention.

[ Fig. 5 ] is a schematic cross-sectional view of another embodiment of the carrier plate capable of accurately adjusting the temperature of the present invention.

[ Fig. 6 ] is a top perspective view of another embodiment of the carrying tray capable of accurately adjusting the temperature of the present invention.

[ FIG. 7 ] is a schematic cross-sectional view of an embodiment of a thin film deposition apparatus using a carrier plate according to the present invention.

10: carrying plate

11: Bearing unit

111: bearing surface

115: Chassis

12:Wafer

13: Heating unit

131: the first heating coil

133: Second heating coil

14: Heat conduction plate

142: Isolation space

15: cooling unit

151: The first cooling pipeline

1511: First input pipeline

1513: first output pipeline

153: Second cooling pipeline

161: the first flow control valve

17: Temperature sensing unit

18: Heat transfer gas delivery pipeline

19: Control unit

Claims (10)

A carrier plate capable of accurately adjusting temperature, comprising: A carrying unit including a carrying surface for carrying at least one wafer; At least one heating unit, including at least one first heating coil and at least one second heating coil, wherein the first heating coil is arranged on a radially outer area of the carrier, and the second heating coil is arranged on the carrier a radially inner region of the disk, and the first heating coil and the second heating coil are independently heated; At least one cooling unit, including at least one first cooling pipeline for transporting a first cooling fluid, wherein the heating unit and the cooling unit are stacked, and the heating unit is closer to the bearing surface of the bearing unit than the cooling unit; A heat conduction plate, located between the cooling unit and the heating unit, and includes at least one raised portion or at least one perforated portion or at least one recessed portion, so that the heating unit and the cooling unit disposed on both sides of the heat conduction plate There is at least one isolation space between them; At least one temperature sensing unit is arranged on the bearing unit and used to measure the temperature of the bearing unit; and A control unit is electrically connected to the temperature sensing unit, and adjusts the flow rate of the first cooling fluid sent to the first cooling pipeline according to the temperature measured by the temperature sensing unit. The carrier tray as claimed in claim 1, wherein the cooling unit includes at least one second cooling pipeline for delivering a second cooling fluid, and the first cooling pipeline is disposed around the outer side of the second cooling pipeline. The carrier tray as described in claim 1, comprising a first input pipeline, a first output pipeline and a first flow control valve, the first input pipeline and the first output pipeline are connected to the first cooling pipeline, the first A flow control valve is fluidly connected to the first input pipeline, and the control unit controls the first flow control valve according to the temperature measured by the temperature sensing unit, so as to adjust the flow of the first input pipeline to the first cooling pipeline. The flow rate of the first cooling fluid. The carrying tray as described in claim 1, comprising: a first input pipeline connected to the first cooling pipeline; a first output pipeline, connected to the first cooling pipeline, wherein the first input pipeline inputs the first cooling fluid into the first cooling pipeline, and the first cooling fluid outputs the first cooling pipeline through the first output pipeline ; a cooling jacket disposed on the first output pipeline and contacting the first output pipeline; a second input pipeline connected to the cooling jacket; a second output line connected to the cooling jacket, wherein the second input line delivers a second cooling fluid to the cooling jacket, and the second cooling fluid exits the cooling jacket through the second output line to The temperature of the first cooling fluid output from the first output pipeline is reduced through the cooling jacket. The carrier tray as claimed in claim 1, wherein the control unit adjusts the magnitude of a power signal input to the first heating coil and the second heating coil respectively according to the temperature sensed by the temperature sensing unit. A thin film deposition device, comprising: A cavity, including an accommodating space; A carrying tray, located in the accommodating space, includes: A carrying unit including a carrying surface for carrying at least one wafer; At least one heating unit, including at least one first heating coil and at least one second heating coil, wherein the first heating coil is arranged on a radially outer area of the carrier, and the second heating coil is arranged on the carrier a radially inner region of the disk, and the first heating coil and the second heating coil are independently heated; At least one cooling unit, including at least one first cooling pipeline for transporting a first cooling fluid, wherein the heating unit and the cooling unit are stacked, and the heating unit is closer to the bearing surface of the bearing unit than the cooling unit; A heat conduction plate, located between the cooling unit and the heating unit, and includes at least one raised portion or at least one perforated portion or at least one recessed portion, so that the heating unit and the cooling unit disposed on both sides of the heat conduction plate There is at least one isolation space between them; At least one temperature sensing unit is arranged on the bearing unit and used to measure the temperature of the bearing unit; and a control unit, electrically connected to the temperature sensing unit, and adjusts the flow rate of the first cooling fluid delivered to the first cooling pipeline according to the temperature measured by the temperature sensing unit; and At least one gas inlet is fluidly connected to the accommodating space of the cavity, and is used for delivering a process gas to the accommodating space. The thin film deposition apparatus as claimed in claim 6, wherein the cooling unit includes at least one second cooling pipeline for delivering a second cooling fluid, and the first cooling pipeline is disposed around the outside of the second cooling pipeline. The film deposition device as described in Claim 6, comprising a first input pipeline, a first output pipeline and a first flow control valve, the first input pipeline and the second output pipeline are connected to the first cooling pipeline, the The first flow control valve is fluidly connected to the first input pipeline, and the control unit controls the first flow control valve according to the temperature measured by the temperature sensing unit, so as to adjust the flow rate delivered from the first input pipeline to the first cooling pipeline. The flow rate of the first cooling fluid. The thin film deposition device as described in Claim 6, comprising: a first input pipeline connected to the first cooling pipeline; a first output pipeline, connected to the first cooling pipeline, wherein the first input pipeline inputs the first cooling fluid into the first cooling pipeline, and the first cooling fluid outputs the first cooling pipeline through the first output pipeline ; a cooling jacket sleeved on the first output pipeline; a second input pipeline connected to the cooling jacket; a second output line connected to the cooling jacket, wherein the second input line delivers a second cooling fluid to the cooling jacket, and the second cooling fluid exits the cooling jacket through the second output line to The temperature of the first cooling fluid output from the first output pipeline is reduced through the cooling jacket. The thin film deposition device as described in Claim 9, comprising a supporting member connected and driving the displacement of the susceptor, and the first input pipeline, the first output pipeline, the cooling jacket, the second input pipeline and the second An output line is located within the support.

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