TW202237690A - Perovskite photoelectric element including benzothiadiazole polymer which improves an energy level matching with fullerene derivatives - Google Patents
Perovskite photoelectric element including benzothiadiazole polymer which improves an energy level matching with fullerene derivatives Download PDFInfo
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本發明是有關於一種聚合物、包含前述聚合物的電子傳輸複合物,以及包含前述電子傳輸複合物的鈣鈦礦光電元件,特別是指一種苯并噻二唑聚合物、包含前述苯并噻二唑聚合物的電子傳輸複合物,以及包含前述電子傳輸複合物的鈣鈦礦光電元件。The present invention relates to a polymer, an electron transport compound comprising the aforementioned polymer, and a perovskite photoelectric element comprising the aforementioned electron transport compound, in particular to a benzothiadiazole polymer, comprising the aforementioned benzothiadiazole An electron transport complex of an oxadiazole polymer, and a perovskite photovoltaic element comprising the aforementioned electron transport complex.
鈣鈦礦光電材料近年發展迅速,因其具有良好的光學性質與電性且可用在濕式塗佈製程,所以被用來製作低成本且高功能性的鈣鈦礦光電元件,例如太陽能電池、發光二極體或光感測器等。Perovskite photoelectric materials have developed rapidly in recent years. Because of their good optical and electrical properties and can be used in wet coating processes, they are used to make low-cost and high-functional perovskite photoelectric components, such as solar cells, Light emitting diodes or light sensors, etc.
常見被用來作為鈣鈦礦光電元件中上載子傳輸材料為富勒烯衍生物,如[6,6]-苯基-C61-丁酸甲酯{[6,6]-phenyl-C61-butyric acid methyl ester, 簡稱PCBM}。然而,PCBM為小分子材料,其用於濕式塗佈成膜性不佳,常導致鈣鈦礦光電元件有漏電(shunt leakage)情況發生而效能低下,且也可能是造成鈣鈦礦光電元件壽命不佳的主因,阻礙其商業化之進程。Commonly used as upper carrier transport materials in perovskite photoelectric components are fullerene derivatives, such as [6,6]-phenyl-C61-butyric acid methyl ester {[6,6]-phenyl-C61-butyric acid methyl ester, referred to as PCBM}. However, PCBM is a small molecule material, which has poor film-forming properties when used in wet coating, which often leads to the occurrence of shunt leakage in perovskite photoelectric devices and low performance, and may also cause perovskite photoelectric devices The main cause of poor life expectancy hinders the process of its commercialization.
CN106449882 A與CN107994121 A已公開通過聚合物摻雜PCBM的方式改良上載子傳輸材料的成膜性。然而,聚合物所扮演的角色除了改善成膜性外,其與富勒烯衍生物的能階匹配性也很重要,其會影響著載子的傳導性與元件的電性。一般來說,該摻雜聚合物之最低未佔有分子軌域(lowest unoccupied molecular orbital, LUMO)的能量越接近富勒烯衍生物越好,反之則可能造成元件效能低落,甚至可能因能障缺陷造成電荷累積,對元件的壽命產生不良的影響。CN106449882 A and CN107994121 A have disclosed that the film-forming properties of upper carrier transport materials are improved by doping PCBM with polymers. However, in addition to improving the film-forming properties, the role of the polymer is also very important to match the energy levels of the fullerene derivatives, which will affect the conductivity of the carrier and the electrical properties of the device. Generally speaking, the closer the energy of the lowest unoccupied molecular orbital (LUMO) of the doped polymer is to that of the fullerene derivative, the better. Otherwise, the performance of the device may be reduced, and even the energy barrier defect may be caused. It causes charge accumulation and adversely affects the life of the component.
因此,如何設計一種可與富勒烯衍生物摻雜的聚合物,以改善富勒烯衍生物於濕式塗佈時的成膜性,並同時能改善材料的能階匹配性,以及提升鈣鈦礦光電元件的能量轉換效率(power conversion efficiency, PCE)與穩定性,對於鈣鈦礦光電元件的技術發展與商業化特別重要。Therefore, how to design a polymer that can be doped with fullerene derivatives to improve the film-forming properties of fullerene derivatives during wet coating, and at the same time improve the energy level matching of materials and increase the calcium The power conversion efficiency (PCE) and stability of titanium photovoltaic components are particularly important for the technological development and commercialization of perovskite photovoltaic components.
因此,本發明之第一目的,即在提供一種苯并噻二唑聚合物。本發明的苯并噻二唑聚合物為一種共聚物,其能提升與富勒烯衍生物的能階匹配性,並可與富勒烯衍生物混和成一種電子傳輸複合物。若以該電子傳輸複合物作為鈣鈦礦光電元件之上載子傳輸材料時,可同時提升鈣鈦礦光電元件的能量轉換效率(PCE)與穩定性。Therefore, the first object of the present invention is to provide a benzothiadiazole polymer. The benzothiadiazole polymer of the present invention is a copolymer, which can improve the energy level matching with the fullerene derivatives, and can be mixed with the fullerene derivatives to form an electron transport complex. If the electron transport complex is used as the carrier transport material on the perovskite photoelectric device, the power conversion efficiency (PCE) and stability of the perovskite photoelectric device can be improved at the same time.
於是,本發明苯并噻二唑聚合物,包含下式(I)所示的重複單元: [式(I)] 其中, p與q分別為0、1或2; X 1與X 2分別為H、F或Cl,且X 1與X 2至少其中一者為F或Cl;及; Ar 1、Ar 2與Ar 3分別為亞芳基(arylene)或亞雜芳基(heteroarylene)。 Thus, the benzothiadiazole polymer of the present invention comprises a repeating unit represented by the following formula (I): [Formula (I)] Wherein, p and q are 0, 1 or 2 respectively; X 1 and X 2 are H, F or Cl respectively, and at least one of X 1 and X 2 is F or Cl; and; Ar 1 , Ar 2 and Ar 3 are respectively arylene or heteroarylene.
因此,本發明之第二目的,即在提供一種電子傳輸複合物。Therefore, the second object of the present invention is to provide an electron transport complex.
於是,本發明電子傳輸複合物包含前述的苯并噻二唑聚合物與富勒烯衍生物。Thus, the electron transport complex of the present invention comprises the aforementioned benzothiadiazole polymer and fullerene derivatives.
因此,本發明之第三目的,即在提供一種鈣鈦礦光電元件。Therefore, the third object of the present invention is to provide a perovskite photoelectric device.
於是,本發明鈣鈦礦光電元件包含前述的電子傳輸複合物。Thus, the perovskite photovoltaic element of the present invention comprises the aforementioned electron transport complex.
本發明之功效在於:由於本發明苯并噻二唑聚合物可通過控制共聚物內分子的化學結構(Ar 1、Ar 2、Ar 3、X 1與X 2),來適當地調整材料的能階,使其與各種富勒烯衍生物具有更佳的能階匹配性。 The effect of the present invention lies in that the energy of the material can be properly adjusted by controlling the chemical structure (Ar 1 , Ar 2 , Ar 3 , X 1 and X 2 ) of the benzothiadiazole polymer of the present invention. order, so that it has better energy level matching with various fullerene derivatives.
此外,本發明苯并噻二唑聚合物可在材料合成階段中即得到所需的分子比例,所以相較於先前技術(CN107994121 A),本發明可省去還要將不同聚合物互相混合的步驟,不僅節省製程的繁雜性,同時也減少後續混合造成材料分佈不均勻的疑慮。In addition, the benzothiadiazole polymer of the present invention can obtain the required molecular ratio in the material synthesis stage, so compared with the prior art (CN107994121 A), the present invention can save the need to mix different polymers with each other. steps, not only saves the complexity of the manufacturing process, but also reduces the doubts about the uneven distribution of materials caused by subsequent mixing.
又,以本發明苯并噻二唑聚合物與富勒烯衍生物混合成電子傳輸複合物時,由該電子傳輸複合物所製得的上載子傳輸材料會具有更佳的成膜性與能階匹配性,且同時能提升鈣鈦礦光電元件的能量轉換效率(PCE)與穩定性。In addition, when the benzothiadiazole polymer of the present invention is mixed with a fullerene derivative to form an electron transport compound, the carrier transport material prepared from the electron transport compound will have better film-forming properties and energy Order matching, and at the same time, it can improve the power conversion efficiency (PCE) and stability of perovskite photovoltaic devices.
以下將就本發明內容進行詳細說明:The content of the present invention will be described in detail below:
[[ 苯并噻二唑Benzothiadiazole 聚合物polymer ]]
本發明苯并噻二唑聚合物,包含下式(I)所示的重複單元: [式(I)] 其中, p與q分別為0、1或2; X 1與X 2分別為H、F或Cl,且X 1與X 2至少其中一者為F或Cl;及; Ar 1、Ar 2和Ar 3分別為亞芳基或亞雜芳。 The benzothiadiazole polymer of the present invention comprises a repeating unit represented by the following formula (I): [Formula (I)] Wherein, p and q are 0, 1 or 2 respectively; X 1 and X 2 are H, F or Cl respectively, and at least one of X 1 and X 2 is F or Cl; and; Ar 1 , Ar 2 and Ar 3 are respectively arylene or heteroarylene.
較佳地,p與q分別為0或1。Preferably, p and q are 0 or 1 respectively.
較佳地,Ar 1為 、 、 或 , 其中, R 1至R 5分別為H、R 6、‒(CH 2)n 1OR 7、‒(CH 2)n 1SR 8、 ‒(CH 2)n 1C(=O)OR 9、‒(CH 2)n 1Si(R 10) 3、‒(CH 2)n 1N(CH 3) 2、 ‒(CH 2)n 1N +R 11(CH 3) 2X¯、‒(CH 2)n 1N +H(CH 3) 2X¯或 ‒(C 2H 4O)n 1R 11; R 6至R 10分別為未經取代或經至少一R 16取代的C 1~C 40直鏈烷基、未經取代或經至少一R 16取代的C 4~C 40支鏈烷基、未經取代或經至少一R 16取代的C 4~C 40環狀烷基、未經取代或經至少一R 16取代的C 2~C 40烯基、或未經取代或經至少一R 16取代的C 2~C 40炔基; R 11為甲基或乙基; n 1為1~8; X為Cl、Br或I; R 16為鹵素、‒CN、芳基、雜芳基或‒SiR 17R 18R 19;及 R 17至R 19分別為C 1~C 40烷基。 Preferably, Ar 1 is , , or , wherein, R 1 to R 5 are H, R 6 , ‒(CH 2 )n 1 OR 7 , ‒(CH 2 )n 1 SR 8 , ‒(CH 2 )n 1 C(=O)OR 9 , ‒(CH 2 )n 1 Si(R 10 ) 3 , ‒(CH 2 )n 1 N(CH 3 ) 2 , ‒(CH 2 )n 1 N + R 11 (CH 3 ) 2 X¯, ‒(CH 2 )n 1 N + H(CH 3 ) 2 X ¯ or ‒(C 2 H 4 O)n 1 R 11 ; R 6 to R 10 are respectively unsubstituted or substituted by at least one R 16 C 1 ~C 40 straight chain alkyl, C 4 ~C 40 branched alkyl unsubstituted or substituted by at least one R 16 , C 4 ~C 40 cyclic alkyl unsubstituted or substituted by at least one R 16 , unsubstituted C 2 ~C 40 alkenyl substituted or substituted by at least one R 16 , or C 2 ~C 40 alkynyl unsubstituted or substituted by at least one R 16 ; R 11 is methyl or ethyl; n 1 is 1 ~8; X is Cl, Br or I; R 16 is halogen, ‒CN, aryl, heteroaryl or ‒SiR 17 R 18 R 19 ; and R 17 to R 19 are respectively C 1 ~C 40 alkyl.
更佳地,Ar 1為 。 More preferably, Ar 1 is .
又更佳地,R 1與R 2分別為R 6。又更佳地,R 1與R 2分別為未經取代或經至少一R 16取代的C 1~C 40直鏈烷基、未經取代或經至少一R 16取代的C 4~C 40支鏈烷基、或未經取代或經至少一R 16取代的C 4~C 40環狀烷基。又更佳地,R 1與R 2分別為未經取代或經至少一R 16取代的C 1~C 40直鏈烷基。又更佳地,R 1與R 2分別為未經取代的C 1~C 40直鏈烷基。又更佳地,R 1與R 2分別為未經取代的C 1~C 15直鏈烷基。又更佳地,R 1與R 2分別為未經取代的C 5~C 13直鏈烷基。 Still more preferably, R 1 and R 2 are R 6 . Still more preferably, R 1 and R 2 are respectively unsubstituted or substituted by at least one R 16 C 1 ~C 40 straight chain alkyl, unsubstituted or substituted by at least one R 16 C 4 ~C 40 branched Alkanyl, or C 4 ~C 40 cyclic alkyl that is unsubstituted or substituted by at least one R 16 . Still more preferably, R 1 and R 2 are C 1 -C 40 linear alkyl groups that are unsubstituted or substituted by at least one R 16 . Still more preferably, R 1 and R 2 are respectively unsubstituted C 1 -C 40 linear alkyl groups. Still more preferably, R 1 and R 2 are respectively unsubstituted C 1 -C 15 linear alkyl groups. Still more preferably, R 1 and R 2 are respectively unsubstituted C 5 -C 13 linear alkyl groups.
更佳地,Ar 2與Ar 3分別為 或 ,其中,n 2與n 3分別為1、2或3;及R 12至R 15分別為H、F、Cl、Br、R 6、‒CN、‒OR 7、‒SR 8、‒C(=O)OR 9、‒Si(R 10) 3、芳基或雜芳基。 More preferably, Ar 2 and Ar 3 are or , wherein, n 2 and n 3 are 1, 2 or 3 respectively; and R 12 to R 15 are H, F, Cl, Br, R 6 , ‒CN, ‒OR 7 , ‒SR 8 , ‒C (= O)OR 9 , -Si(R 10 ) 3 , aryl or heteroaryl.
又更佳地,Ar 2與Ar 3分別為 。 And more preferably, Ar 2 and Ar 3 are respectively .
又更佳地,R 12與R 13分別為H或R 6。又更佳地,R 12與R 13分別為H、未經取代或經至少一R 16取代的C 1~C 40直鏈烷基、未經取代或經至少一R 16取代的C 4~C 40支鏈烷基、或未經取代或經至少一R 16取代的C 4~C 40環狀烷基。又更佳地,R 12與R 13分別為H、或未經取代或經至少一R 16取代的C 1~C 40直鏈烷基。又更佳地,R 12與R 13分別為H或未經取代的C 1~C 40直鏈烷基。又更佳地,R 12與R 13分別為H或未經取代的C 1~C 11直鏈烷基。又更佳地,R 12與R 13分別為H或未經取代的C 3~C 9直鏈烷基。 Still more preferably, R 12 and R 13 are H or R 6 respectively. Still more preferably, R 12 and R 13 are H, unsubstituted or substituted by at least one R 16 C 1 ~ C 40 linear alkyl, unsubstituted or substituted by at least one R 16 C 4 ~ C 40 branched chain alkyl, or C 4 ~C 40 cyclic alkyl unsubstituted or substituted by at least one R 16 . Still more preferably, R 12 and R 13 are respectively H, or C 1 -C 40 linear alkyl groups that are unsubstituted or substituted by at least one R 16 . Still more preferably, R 12 and R 13 are H or unsubstituted C 1 -C 40 linear alkyl groups respectively. Still more preferably, R 12 and R 13 are H or unsubstituted C 1 -C 11 linear alkyl groups respectively. Still more preferably, R 12 and R 13 are H or unsubstituted C 3 ~C 9 straight chain alkyl, respectively.
[[ 電子傳輸複合物electron transport complex ]]
本發明電子傳輸複合物,包含前述的苯并噻二唑聚合物與富勒烯衍生物。The electron transport complex of the present invention comprises the aforementioned benzothiadiazole polymer and fullerene derivatives.
該富勒烯衍生物例如但不限於是[6,6]-苯基-C61-丁酸甲酯(PCBM)、[6,6]-苯基-C71-丁酸甲酯{[6,6]-phenyl- C71-butyric acid methyl ester , 簡稱PC71BM}、雙[6,6]-苯基-C62-丁酸甲酯{Bis(1-[3-(methoxycarbonyl)propyl]-1- phenyl)-[6,6]C62, 簡稱Bis-PCBM}、茚-碳六十之雙加成物{1',1'',4',4''-tetrahydro-di[1,4]methanonaphthaleno[5,6]fullerene-C60, 簡稱ICBA}或前述的組合。The fullerene derivatives are, for example but not limited to, [6,6]-phenyl-C61-butyric acid methyl ester (PCBM), [6,6]-phenyl-C71-butyric acid methyl ester {[6,6 ]-phenyl- C71-butyric acid methyl ester , referred to as PC71BM}, bis[6,6]-phenyl-C62-butyric acid methyl ester {Bis(1-[3-(methoxycarbonyl)propyl]-1-phenyl)- [6,6]C62, referred to as Bis-PCBM}, indene-carbon sixty double adduct {1',1'',4',4''-tetrahydro-di[1,4]methanonaphthaleno[5, 6] fullerene-C60, referred to as ICBA} or a combination of the aforementioned.
較佳地,該苯并噻二唑聚合物的最低未佔有分子軌域(LUMO)與該富勒烯衍生物的最低未佔有分子軌域(LUMO)之能量差小於1.0 eV。更佳地,該苯并噻二唑聚合物的最低未佔有分子軌域(LUMO)與該富勒烯衍生物的最低未佔有分子軌域(LUMO)之能量差小於0.4 eVPreferably, the energy difference between the lowest unoccupied molecular orbital (LUMO) of the benzothiadiazole polymer and the lowest unoccupied molecular orbital (LUMO) of the fullerene derivative is less than 1.0 eV. More preferably, the energy difference between the lowest unoccupied molecular orbital (LUMO) of the benzothiadiazole polymer and the lowest unoccupied molecular orbital (LUMO) of the fullerene derivative is less than 0.4 eV
較佳地,以該電子傳輸複合物的總重為100 wt%計,該苯并噻二唑聚合物的重量範圍為0.1~99 wt%。更佳地,以該電子傳輸複合物的總重為100 wt%計,該苯并噻二唑聚合物的重量範圍為0.5~20 wt%。Preferably, based on 100 wt% of the total weight of the electron transport complex, the weight range of the benzothiadiazole polymer is 0.1-99 wt%. More preferably, based on the total weight of the electron transport complex being 100 wt%, the weight range of the benzothiadiazole polymer is 0.5-20 wt%.
[[ 鈣鈦礦光電元件Perovskite Photovoltaics ]]
本發明鈣鈦礦光電元件,包含如前述的電子傳輸複合物。The perovskite photoelectric element of the present invention comprises the aforementioned electron transport complex.
較佳地,該鈣鈦礦光電元件包括一基板、一積層於該基板上的下電極、一積層於該下電極上的下載子傳輸層、一積層於該下載子傳輸層上的鈣鈦礦活性層、一積層於該鈣鈦礦活性層上的上載子傳輸單元、一積層於該上載子傳輸單元上的上電極,該上載子傳輸單元包含該電子傳輸複合物。Preferably, the perovskite photoelectric element comprises a substrate, a lower electrode laminated on the substrate, a carrier transport layer laminated on the lower electrode, a perovskite laminated on the carrier transport layer Active layer, an upper carrier transport unit stacked on the perovskite active layer, an upper electrode stacked on the upper carrier transport unit, the upper carrier transport unit includes the electron transport complex.
更佳地,該上載子傳輸單元包括一上載子傳輸層,該上載子傳輸層包含該電子傳輸複合物。More preferably, the upper carrier transport unit includes an upper carrier transport layer, and the upper carrier transport layer contains the electron transport complex.
又更佳地,該上載子傳輸單元還包括至少一上載子修飾層,該上載子傳輸層積層於該鈣鈦礦活性層上,該上載子修飾層積層於該上載子傳輸層上,該上電極積層於該上載子修飾層上。Still more preferably, the upper carrier transport unit further includes at least one upper carrier modification layer, the upper carrier modification layer is laminated on the perovskite active layer, the upper carrier modification layer is laminated on the upper carrier transport layer, the upper Electrodes are stacked on the upper carrier modification layer.
又更佳地,前述上載子傳輸層的厚度範圍為0.1~200 nm。又更佳地,前述上載子傳輸層的厚度範圍為1~100 nm。Still more preferably, the aforementioned upper carrier transport layer has a thickness ranging from 0.1 to 200 nm. Still more preferably, the aforementioned upper carrier transport layer has a thickness ranging from 1 to 100 nm.
<< 比較例comparative example 1>1>
製備苯并噻二唑聚合物Preparation of Benzothiadiazole Polymers
比較例 1的苯并噻二唑聚合物包含下列所示的重複單元。 比較例 1 The benzothiadiazole polymer of Comparative Example 1 contained repeating units shown below. Comparative example 1
比較例
1的苯并噻二唑聚合物是依據下列方法所製得。
化合物 1 芴 化合物 1化合物
1的製備方法:
將芴(50 g, 300.8 mmol)與N-溴代丁二醯亞胺(160.6 g, 902.4 mmol)溶於二甲基甲醯胺(250 mL)中,並加熱至50℃攪拌6小時。待反應結束後,將產物倒入冰水中沉澱出固體。經過濾後,使用甲醇洗滌產物,再經真空乾燥後得到白色固體化合物
1(83.7 g, 產率:86%)。
化合物 2 化合物 1 化合物 2化合物
2的製備方法:
將化合物
1(7.3 g, 22.5 mmol)與1-溴辛烷(13.1 g, 67.5 mmol)溶解於四氫呋喃中。接著,在冰浴下加入叔丁醇鉀(12.6 g. 112.5 mmol)並回到室溫反應1小時。待反應結束後,先以1N鹽酸水溶液中和,再加入二氯甲烷進行萃取。有機層以無水硫酸鎂乾燥後,迴旋濃縮機去除溶劑。最後再以矽膠管柱層析(正庚烷為沖提液)純化,得白色固體化合物
2(9.7 g, 產率:79%)。
化合物 3 化合物 2 化合物 3化合物
3的製備方法:
將化合物
2(9.6 g, 16.4 mmol)入料於250 mL反應瓶中後,加入100 mL的無水四氫呋喃並降至-78℃。接著,逐滴加入2.5 M的正丁基鋰的正己烷溶液(22 mL, 54.1 mmol)並維持-78℃ 1小時後,再逐滴加入硼酸三甲酯(17.0 g, 164 mmol)。回到室溫後加入4N鹽酸水溶液攪拌1小時。結束後,加入水並用正庚烷萃取及用無水硫酸鎂乾燥。經過濾後,濃縮去除溶劑。以四氫呋喃與正庚烷進行再結晶純化得到中間體白色固體。接著,將中間體與頻哪醇(pinacol)(3.9 g, 32.8 mmol)和甲苯 (100 mL)置入圓底瓶中攪拌隔夜。反應結束後,加入無水硫酸鎂乾燥、濃縮去除溶劑。粗產物以甲苯與甲醇進行再結晶純化得到白色固體化合物
3(4.5 g, 產率:43%)。
比較例
1的製備方法:
在氮氣下將化合物
3(500 mg, 0.78 mmol)、化合物
4(229 mg, 0.78 mmol)、三(2-呋喃基)膦(24 mg, 0.08 mmol)、Pd
2(dba)
3(20 mg, 0.02 mmol)、K
3PO
4(1.65 g, 7.78 mmol)、Aliquat336 (1mL)溶於甲苯(20 mL)與水(4 mL)的混合液中。接著,加熱迴流攪拌隔夜。待反應結束後,降溫至室溫,先以水與三氯甲烷進行萃取,再使用無水硫酸鎂乾燥。經過濾後,濃縮去除溶劑。以三氯甲烷與甲醇進行再沉澱析出固體。最後,收集沉澱物並將該固體依序以甲醇、丙酮洗滌後,經真空乾燥得到比較例
1(264 mg, 產率:61%)。
The benzothiadiazole polymer of Comparative Example 1 was prepared according to the following method.
<< 實施例Example 1>1>
製備苯并噻二唑聚合物Preparation of Benzothiadiazole Polymers
實施例 1的苯并噻二唑聚合物包含下列所示的重複單元。 實施例 1 The benzothiadiazole polymer of Example 1 contained the repeating units shown below. Example 1
實施例 1的苯并噻二唑聚合物是依據下列方法所製得。 實施例 1的製備方法: 在氮氣下,將化合物 3(500 mg, 0.78 mmol)、化合物 5(256 mg, 0.78 mmol)、三(2-呋喃基)膦(24 mg, 0.08 mmol)、Pd 2(dba) 3(20 mg, 0.02 mmol)、K 3PO 4(1.65 g, 7.78 mmol)、Aliquat336 (1mL)溶於甲苯 (20 mL)與水(4 mL)的混合液中。接著,加熱迴流攪拌隔夜。待反應結束後,降溫至室溫,先以水與三氯甲烷進行萃取,再使用無水硫酸鎂乾燥。經過濾後,濃縮去除溶劑。以三氯甲烷與甲醇進行再沉澱析出固體。收集沉澱物,並將該固體依序以甲醇、丙酮洗滌後,以真空乾燥得到實施例 1(283 mg, 產率:62%)。 The benzothiadiazole polymer of Example 1 was prepared according to the following method. Preparation method of Example 1 : Under nitrogen, compound 3 (500 mg, 0.78 mmol), compound 5 (256 mg, 0.78 mmol), tris(2-furyl)phosphine (24 mg, 0.08 mmol), Pd 2 (dba) 3 (20 mg, 0.02 mmol), K 3 PO 4 (1.65 g, 7.78 mmol), and Aliquat336 (1 mL) were dissolved in a mixture of toluene (20 mL) and water (4 mL). Then, it was heated to reflux and stirred overnight. After the reaction, cool down to room temperature, extract with water and chloroform, and then dry with anhydrous magnesium sulfate. After filtration, it was concentrated to remove the solvent. A solid was precipitated by reprecipitation with chloroform and methanol. The precipitate was collected, and the solid was washed sequentially with methanol and acetone, and dried in vacuo to obtain Example 1 (283 mg, yield: 62%).
<< 實施例Example 2>2>
製備苯并噻二唑聚合物Preparation of Benzothiadiazole Polymers
實施例 2的苯并噻二唑聚合物包含下列所示的重複單元。 實施例 2 The benzothiadiazole polymer of Example 2 contained the repeating units shown below. Example 2
實施例
2的苯并噻二唑聚合物是依據下列方法所製得。
化合物 6 3- 六烷基噻吩 化合物 6化合物
6的製備方法:
將3-六烷基噻吩(10 g, 59 mmol)與150 mL的無水四氫呋喃混合圓底瓶中。在-10
oC下,緩慢的加入2.5M正丁基鋰(26 mL, 65 mmol)並在-10
oC下持續攪拌1小時。接著,將三甲基氯化錫(15.4 g, 77 mmol)緩慢的加入反應當中,並在0
oC下持續攪拌30分鐘。回至室溫後,加入庚烷與去離子水萃取三次。有機層先以無水硫酸鎂乾燥,再經過濾後,以迴旋濃縮機濃縮抽乾得到黃色液體化合物
6(19.6 g, 產率:99%)。
化合物
7的製備方法:
將化合物
5(8.5. g, 25 mmol)、化合物
6(19.6 g, 59 mmol)、三(2-呋喃基)膦(840 mg, 2.7 mmol)及Pd
2(dba)
3(710 mg, 0.7 mmol)加入至圓底瓶中。隨後加入85 mL的甲苯,在氮氣保護下50
oC下攪拌3小時。冷卻後,先使用迴旋濃縮機移除甲苯,再以矽膠管住層析(石油醚/二氯甲烷)進行純化。最後,經真空乾燥後得到橘黃色固體化合物
7(8.85 g, 產率:68%)。
化合物 8 化合物 7 化合物 8化合物
8的製備方法:
將化合物
7(8.85 g, 17.6 mmol)加入至100 mL的圓底瓶當中後,加入90 mL的四氫呋喃。在避光的條件下,逐步加入NBS(7,45 g, 41.9 mmol),隨後加熱至55
oC攪拌1小時。待反應結束後,先使用迴旋濃縮機移除溶劑,再以矽膠管住層析(石油醚/二氯甲烷)進行純化。最後,經真空乾燥後得到橘紅色固體化合物
8(8.65 g, 產率:74%)。
實施例
2的製備方法:
在氮氣下,將化合物
3(486 mg, 0.75 mmol)、化合物
8(500 mg, 0.76 mmol)、三(2-呋喃基)膦(24 mg, 0.08 mmol)、Pd
2(dba)
3(17 mg, 0.018 mmol)、K
3PO
4(1.65 g, 7.78 mmol)、Aliquat336 (1mL)溶於甲苯(15 mL)與水(3 mL)的混合液中。接著,加熱迴流攪拌隔夜。待反應結束後,降溫至室溫,先以水與三氯甲烷進行萃取,再使用無水硫酸鎂乾燥。經過濾後,濃縮去除溶劑。以三氯甲烷與甲醇進行再沉澱析出固體。收集沉澱物,並將該固體依序以甲醇、丙酮洗滌後,以真空乾燥得到實施例
2(500 mg, 產率:72%)。
The benzothiadiazole polymer of Example 2 was prepared according to the following method.
<< 比較比較例Comparative example 11 與實施例with example 1~21~2 的能階匹配性energy level matching >>
比較例1、實施例1與實施例2之材料能階是以下述方法所測得:先以循環伏安法測得材料之最高佔有分子軌域(highest occupied molecular orbital, HOMO),再以紫外光-可見光光譜儀測得材料之能隙(bandgap),並藉此推算出材料之LUMO。圖1為鈣鈦礦(Perovskite)、PCBM、比較例1、實施例1~2的能階圖。The energy levels of the materials in Comparative Example 1, Example 1 and Example 2 were measured by the following method: First, the highest occupied molecular orbital (HOMO) of the material was measured by cyclic voltammetry, and then the ultraviolet The light-visible light spectrometer measures the energy gap (bandgap) of the material, and uses it to calculate the LUMO of the material. Fig. 1 is the energy level diagram of Perovskite (Perovskite), PCBM, Comparative Example 1, and Examples 1-2.
參閱圖1,實施例1與實施例2的LUMO分別為-3.53 eV與-3.86 eV。相較於比較例1(-3.42eV),實施例1與實施例2更接近PCBM與鈣鈦礦活性層的LUMO(-3.90 eV),因此有助於減少材料界面的能障缺陷。Referring to FIG. 1 , the LUMOs of Example 1 and Example 2 are -3.53 eV and -3.86 eV, respectively. Compared with Comparative Example 1 (-3.42eV), Example 1 and Example 2 are closer to the LUMO (-3.90 eV) of the PCBM and perovskite active layer, thus helping to reduce the energy barrier defects at the material interface.
<< 鈣鈦礦光電元件結構Perovskite photoelectric element structure >>
參閱圖2,本發明鈣鈦礦光電元件的第一種結構包括一基板1、一積層於該基板1上的下電極2、一積層於該下電極2上的下載子傳輸層3、一積層於該下載子傳輸層3上的鈣鈦礦活性層4、一積層於該鈣鈦礦活性層4上的上載子傳輸單元5,及一積層於該上載子傳輸單元5上的上電極6。該上載子傳輸單元5包括一上載子傳輸層51。Referring to Fig. 2, the first structure of the perovskite photoelectric element of the present invention comprises a
參閱圖3,本發明鈣鈦礦光電元件的第二種結構包括一基板1、一積層於該基板1上的下電極2、一積層於該下電極2上的下載子傳輸層3、一積層於該下載子傳輸層3上的鈣鈦礦活性層4、一積層於該鈣鈦礦活性層4上的上載子傳輸單元5,及一積層於該上載子傳輸單元5上的上電極6。該上載子傳輸單元5包括一上載子傳輸層51及一上載子修飾層52。該上載子傳輸層51積層於該鈣鈦礦活性層4上,該上載子修飾層52積層於該上載子傳輸層51上,該上電極6積層於該上載子修飾層52上。Referring to Fig. 3, the second structure of the perovskite photoelectric element of the present invention comprises a
<< 比較應用例Comparative application example 1~21~2 與應用例and application examples 1~2>1~2>
製備鈣鈦礦光電元件Preparation of perovskite photoelectric components
比較應用例1~2與應用例1~2的鈣鈦礦光電元件(結構參閱圖3)是依據下表1所示電子傳輸複合物(作為上載子傳輸材料)中所包含的苯并噻二唑聚合物與下列方法所製得。
表1
將氧化銦錫(ITO)玻璃基板(12 Ω/□)依序使用清潔劑、去離子水、丙酮及異丙醇經超音波震盪清洗15分鐘後,再經由UV ozone清潔機進行基板表面清潔30分鐘。其中,玻璃基板即為該基板1,氧化銦錫(ITO)即為該下電極2。Clean the indium tin oxide (ITO) glass substrate (12 Ω/□) sequentially with detergent, deionized water, acetone and isopropanol by ultrasonic vibration for 15 minutes, and then clean the surface of the substrate with a UV ozone cleaner for 30 minutes minute. Wherein, the glass substrate is the
將聚[雙(4-苯基)(2,4,6-三甲基苯基)胺]{poly [bis(4-phenyl)(2,4,6-trimethylphenyl)amine], PTAA}與溶劑甲苯混和,形成固含量為1.5 wt%的溶液。將該溶液塗佈於該下電極2上,並於100~120℃烘烤10~30分鐘後,形成厚度約10 nm的下載子傳輸層3。Poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine]{poly [bis(4-phenyl)(2,4,6-trimethylphenyl)amine], PTAA} with solvent Toluene was mixed to form a solution with a solid content of 1.5 wt%. The solution is coated on the
將鈣鈦礦原料成份HC(NH
2)
2I、CsI、PbI
2、PbBr
2依照莫耳比例0.83:0.17:0.85:0.15與溶劑DMF/DMSO (9:1 v/v)混和,形成固含量為49 wt%的鈣鈦礦前驅液。先將該鈣鈦礦前驅液塗佈於該下載子傳輸層3上,再利用真空減壓法去除溶劑,並於100~110℃下烘烤30~60分鐘後,形成厚度約400 nm的鈣鈦礦活性層4。
Mix the perovskite raw material components HC(NH 2 ) 2 I, CsI, PbI 2 , and PbBr 2 with the solvent DMF/DMSO (9:1 v/v) according to the molar ratio of 0.83:0.17:0.85:0.15 to form a solid content It is 49 wt% perovskite precursor solution. First apply the perovskite precursor solution on the
依據表1所示的苯并噻二唑聚合物,將電子傳輸複合物(包含苯并噻二唑聚合物與PCBM)與溶劑氯苯混合,形成固含量2.5 wt%的溶液。其中,以該電子傳輸複合物的總重為100 wt%計,該苯并噻二唑聚合物的重量為5 wt%。將該溶液塗佈於鈣鈦礦活性層4上,並於80~100℃烘烤10分鐘後,形成厚度約50 nm的上載子傳輸層51。According to the benzothiadiazole polymers shown in Table 1, the electron transport complex (including benzothiadiazole polymer and PCBM) was mixed with the solvent chlorobenzene to form a solution with a solid content of 2.5 wt%. Wherein, based on the total weight of the electron transport complex being 100 wt%, the weight of the benzothiadiazole polymer is 5 wt%. The solution is coated on the perovskite
將PEI與溶劑二丁醇混合,形成固含量0.05 wt%的溶液。將該溶液塗佈於上載子傳輸層51上,並於90~100℃烘烤6分鐘後,形成厚度約2 nm的上載子修飾層52。PEI was mixed with the solvent dibutanol to form a solution with a solid content of 0.05 wt%. The solution is coated on the upper
先將前述所得的樣品送入真空腔體內,再於1.0×10
‒6torr下蒸鍍銀金屬,形成厚度約100 nm的上電極6後,得到鈣鈦礦光電元件。
The above-mentioned obtained samples were first sent into a vacuum chamber, and then silver metal was evaporated at 1.0×10 ‒6 torr to form an
<< 鈣鈦礦光電元件的能量轉換效率Energy Conversion Efficiency of Perovskite Photovoltaics (PCE)(PCE) 分析analyze >>
鈣鈦礦光伏元件的工作區域經由金屬遮罩定義為0.04 cm 2。Keithley 2400作為電源供應器,以Lab-View程式控制,在光強度100 mW/cm 2的AM1.5G模擬太陽光(SAN-EI XES-40S3)的照射下量測鈣鈦礦光電元件的電性,並以電腦程式記錄,得到電流-電壓特性參數。 The working area of the perovskite photovoltaic element is defined as 0.04 cm 2 via a metal mask. Keithley 2400 is used as a power supply, controlled by Lab-View program, under the irradiation of AM1.5G simulated sunlight (SAN-EI XES-40S3) with a light intensity of 100 mW/cm 2 to measure the electrical properties of perovskite photoelectric components , and recorded with a computer program to obtain the current-voltage characteristic parameters.
應用例1~2與比較應用例1~2之鈣鈦礦光電元件所使用的電子傳輸複合物,以及由前述電性分析結果所得之開路電壓(open voltage;V
oc)、短路電流(short-circuit current;J
sc)、填充因子(fill factor;FF)與能量轉換效率(PCE)分別整理於下表2中。需補充說明的是,填充因子FF被認為與元件的界面缺陷有關,一般來說,缺陷越少,載子傳遞越無障礙,FF值則越高。
表2
由表2可以發現,相較於電子傳輸複合物中不包含任何聚合物的鈣鈦礦光電元件(比較應用例1)及電子傳輸複合物中包含比較例1之苯并噻二唑聚合物與PCBM的鈣鈦礦光電元件(比較應用例2),採用電子傳輸複合物中包含本發明苯并噻二唑聚合物與PCBM的鈣鈦礦光電元件(應用例1~2)會具有更高的能量轉換效率(PCE)。It can be found from Table 2 that, compared with the perovskite photoelectric element (comparative application example 1) that does not contain any polymer in the electron transport compound and the benzothiadiazole polymer of Comparative Example 1 in the electron transport compound and The perovskite optoelectronic element (comparative application example 2) of PCBM, the perovskite optoelectronic element (application example 1 ~ 2) that comprises the benzothiadiazole polymer of the present invention and PCBM in the electronic transport compound will have higher Power Conversion Efficiency (PCE).
特別說明的是,應用例1~2之填充因子FF相較於比較應用例2有明顯的增加(增加幅度約15~20%),顯示材料界面的能障缺陷減少,而有助於載子的傳遞能力提升。前述結果充分說明包含本發明苯并噻二唑聚合物與PCBM之電子傳輸複合物更適合作為鈣鈦礦光電元件之上載子傳輸材料。It is particularly noted that the fill factor FF of application examples 1-2 is significantly increased compared with comparative application example 2 (the increase range is about 15-20%), which shows that the energy barrier defects at the material interface are reduced, which is conducive to the carrier The transmission ability is improved. The foregoing results fully demonstrate that the electron transport complex comprising the benzothiadiazole polymer of the present invention and PCBM is more suitable as the carrier transport material on the perovskite photoelectric element.
<< 鈣鈦礦光電元件的連續照光穩定性測試Continuous Illumination Stability Test of Perovskite Photovoltaic Components >>
將應用例1~2與比較應用例1~2的鈣鈦礦光電元件持續照光作模擬實際應用情況,測試結果見圖4。The perovskite photoelectric elements of application examples 1~2 and comparative application examples 1~2 were continuously illuminated to simulate the actual application situation, and the test results are shown in Figure 4.
由圖4可以發現,相較於電子傳輸複合物中不包含任何聚合物的鈣鈦礦光電元件(比較應用例1)及電子傳輸複合物中包含比較例1與PCBM的元件(比較應用例2),採用電子傳輸複合物中包含本發明苯并噻二唑聚合物與PCBM的鈣鈦礦光電元件(應用例1~2)會具有更穩定的能量轉換效率(PCE)。It can be found from Figure 4 that, compared with the perovskite photoelectric element (comparative application example 1) that does not contain any polymer in the electron transport compound and the element that includes comparative example 1 and PCBM in the electron transport compound (comparative application example 2 ), the perovskite photoelectric element (application examples 1-2) comprising the benzothiadiazole polymer of the present invention and PCBM in the electron transport compound will have a more stable power conversion efficiency (PCE).
前述情況是因為包含本發明苯并噻二唑聚合物與富勒烯衍生物的電子傳輸複合物除了具有優秀的成膜性之外,相較於比較例1之苯并噻二唑聚合物,本發明苯并噻二唑聚合物具有與富勒烯衍生物更匹配的能階特性,因此利於減少材料能障缺陷而有助於提升元件的使用壽命。The foregoing is because the electron transport complex comprising the benzothiadiazole polymer of the present invention and a fullerene derivative has excellent film-forming properties, compared to the benzothiadiazole polymer of Comparative Example 1, The benzothiadiazole polymer of the present invention has energy level characteristics that are more compatible with the fullerene derivatives, so it is beneficial to reduce material energy barrier defects and help to improve the service life of components.
綜上所述,由於本發明苯并噻二唑聚合物可通過控制共聚物內分子的化學結構(Ar 1、Ar 2、Ar 3、X 1與X 2),來適當地調整材料的能階,使其與各種富勒烯衍生物具有更佳的能階匹配性。此外,本發明苯并噻二唑聚合物可在材料合成階段中即得到所需的分子比例,所以相較於先前技術本發明可省去還要將不同聚合物互相混合的步驟,不僅節省製程的繁雜性,同時也減少後續混合造成材料分佈不均勻的疑慮。又,以本發明苯并噻二唑聚合物與富勒烯衍生物混合成電子傳輸複合物時,由該電子傳輸複合物所製得的上載子傳輸材料會具有更佳的成膜性與能階匹配性,且同時能提升鈣鈦礦光電元件的能量轉換效率(PCE)與穩定性,故確實能達成本發明之目的。 In summary, since the benzothiadiazole polymer of the present invention can properly adjust the energy level of the material by controlling the chemical structure (Ar 1 , Ar 2 , Ar 3 , X 1 and X 2 ) of the molecules in the copolymer , so that it has better energy level matching with various fullerene derivatives. In addition, the benzothiadiazole polymer of the present invention can obtain the required molecular ratio in the material synthesis stage, so compared with the prior art, the present invention can save the step of mixing different polymers with each other, not only saving the production process At the same time, it also reduces the doubts about the uneven distribution of materials caused by subsequent mixing. In addition, when the benzothiadiazole polymer of the present invention is mixed with a fullerene derivative to form an electron transport compound, the carrier transport material prepared from the electron transport compound will have better film-forming properties and energy Order matching, and at the same time can improve the power conversion efficiency (PCE) and stability of the perovskite photoelectric element, so the purpose of the present invention can indeed be achieved.
惟以上所述者,僅為本發明之實施例而已,當不能以此限定本發明實施之範圍,凡是依本發明申請專利範圍及專利說明書內容所作之簡單的等效變化與修飾,皆仍屬本發明專利涵蓋之範圍內。But what is described above is only an embodiment of the present invention, and should not limit the scope of the present invention. All simple equivalent changes and modifications made according to the patent scope of the present invention and the content of the patent specification are still within the scope of the present invention. Within the scope covered by the patent of the present invention.
1:基板 2:下電極 3:下載子傳輸層 4:鈣鈦礦活性層 5:上載子傳輸單元 51:上載子傳輸層 52:上載子修飾層 6:上電極 1: Substrate 2: Bottom electrode 3: Download sub-transport layer 4: Perovskite active layer 5: Upload subtransmission unit 51:Upload sub-transport layer 52:Upload sub-modification layer 6: Upper electrode
本發明之其他的特徵及功效,將於參照圖式的實施方式中清楚地呈現,其中:
圖1說明鈣鈦礦(Perovskite)、PCBM、比較例1、實施例1~2的能階圖;
圖2是一剖面示意圖,說明本發明鈣鈦礦光電元件的第一種結構;
圖3是一剖面示意圖,說明本發明鈣鈦礦光電元件的第二種結構;及
圖4是一曲線圖,說明應用例1~2與比較應用例1~2的鈣鈦礦光電元件持續照光作模擬後的穩定性結果。
Other features and effects of the present invention will be clearly presented in the implementation manner with reference to the drawings, wherein:
Fig. 1 illustrates the energy level diagram of perovskite (Perovskite), PCBM, comparative example 1,
1:基板 1: Substrate
2:下電極 2: Bottom electrode
3:下載子傳輸層 3: Download sub-transport layer
4:鈣鈦礦活性層 4: Perovskite active layer
5:上載子傳輸單元 5: Upload subtransmission unit
51:上載子傳輸層 51:Upload sub-transport layer
52:上載子修飾層 52:Upload sub-modification layer
6:上電極 6: Upper electrode
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