TW202237689A - Curable composition, thermally conductive material, thermally conductive sheet, device with thermally conductive layer - Google Patents

Curable composition, thermally conductive material, thermally conductive sheet, device with thermally conductive layer Download PDF

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TW202237689A
TW202237689A TW111100331A TW111100331A TW202237689A TW 202237689 A TW202237689 A TW 202237689A TW 111100331 A TW111100331 A TW 111100331A TW 111100331 A TW111100331 A TW 111100331A TW 202237689 A TW202237689 A TW 202237689A
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group
compound
thermally conductive
mass
formula
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TW111100331A
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Chinese (zh)
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人見誠一
新居輝樹
林大介
高橋慶太
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日商富士軟片股份有限公司
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    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/62Alcohols or phenols
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K5/00Heat-transfer, heat-exchange or heat-storage materials, e.g. refrigerants; Materials for the production of heat or cold by chemical reactions other than by combustion
    • C09K5/08Materials not undergoing a change of physical state when used
    • C09K5/14Solid materials, e.g. powdery or granular

Abstract

The present invention addresses the problem of providing: a curable composition from which it is possible to form a thermally conductive material having excellent thermal conductivity; a thermally conductive material; a thermally conductive sheet; and a device provided with a thermally conductive layer. The curable composition according to the present invention contains a phenolic compound, an epoxy compound, an aggregated boron nitride, and an inorganic substance X. The inorganic substance X is at least one selected from the group consisting of aluminum oxide and silicon dioxide. The average particle diameter of the aggregated boron nitride is 20 [mu]m or more. The average particle diameter of the inorganic substance X is 0.30 [mu]m or less.

Description

硬化性組成物、導熱材料、導熱片、附導熱層的器件Curable composition, thermally conductive material, thermally conductive sheet, device with thermally conductive layer

本發明係有關一種硬化性組成物、導熱材料、導熱片及附導熱層的器件。The invention relates to a curable composition, a heat conduction material, a heat conduction sheet and a device with a heat conduction layer.

近年來,在個人電腦、一般家用電器及汽車等電子設備中所使用之功率半導體器件的小型化正在迅速發展。隨著小型化控制由高密度化之功率半導體器件產生之熱量成為問題。 為了解決上述問題,正在使用促進來自功率半導體器件之散熱之導熱材料。 例如,專利文獻1中揭示有一種含有氮化硼等之導熱性組成物。 In recent years, the miniaturization of power semiconductor devices used in electronic equipment such as personal computers, general household appliances, and automobiles has been rapidly progressing. Controlling heat generated by high-density power semiconductor devices becomes a problem with miniaturization. In order to solve the above-mentioned problems, thermally conductive materials that promote heat dissipation from power semiconductor devices are being used. For example, Patent Document 1 discloses a thermally conductive composition containing boron nitride or the like.

[專利文獻1]日本特開2013-177562號公報[Patent Document 1] Japanese Unexamined Patent Publication No. 2013-177562

本發明人等對如專利文獻1等中所記載之組成物進行了研究,結果發現關於所獲得之導熱材料的導熱性尚有改善的餘地。The inventors of the present invention have studied the composition described in Patent Document 1, etc., and found that there is room for improvement in the thermal conductivity of the obtained thermally conductive material.

因此,本發明的課題為提供一種能夠形成導熱性優異之導熱材料之硬化性組成物。 又,本發明的課題還在於提供一種有關上述硬化性組成物之導熱材料、導熱片及附導熱層的器件。 Therefore, an object of the present invention is to provide a curable composition capable of forming a thermally conductive material having excellent thermal conductivity. Furthermore, the object of the present invention is to provide a thermally conductive material, a thermally conductive sheet, and a device with a thermally conductive layer related to the above curable composition.

本發明人等為了解決上述課題而進行了深入研究之結果,發現了藉由以下結構能夠解決上述課題。As a result of intensive studies to solve the above-mentioned problems, the inventors of the present invention have found that the above-mentioned problems can be solved by the following configuration.

〔1〕一種硬化性組成物,其含有酚化合物、環氧化合物、凝聚狀氮化硼及無機物X, 上述無機物X為選自包括氧化鋁及二氧化矽之群組中之至少1種, 上述凝聚狀氮化硼的平均粒徑為20μm以上, 上述無機物X的平均粒徑為0.30μm以下。 〔2〕如〔1〕所述之硬化性組成物,其中 上述無機物X的平均粒徑為0.25μm以下。 〔3〕如〔1〕或〔2〕所述之硬化性組成物,其中 上述凝聚狀氮化硼的含量與上述無機物X的含量之質量比為5.0~25.0。 〔4〕如〔1〕至〔3〕之任一項所述之硬化性組成物,其進一步含有表面修飾劑, 上述凝聚狀氮化硼與吸附於上述凝聚狀氮化硼的表面上之上述表面修飾劑一起構成表面修飾凝聚狀氮化硼。 〔5〕如〔1〕至〔4〕之任一項所述之硬化性組成物,其滿足上述酚化合物包含具有三𠯤骨架之酚化合物及上述環氧化合物包含具有三𠯤骨架之環氧化合物中的至少一個要件。 〔6〕如〔1〕至〔5〕之任一項所述之硬化性組成物,其進一步含有硬化促進劑。 〔7〕如〔6〕所述之硬化性組成物,其中 上述硬化促進劑包含具有磷原子之化合物。 〔8〕如〔1〕至〔7〕之任一項所述之硬化性組成物,其進一步含有離子捕捉劑。 〔9〕如〔1〕至〔8〕之任一項所述之硬化性組成物,其進一步含有順丁烯二醯亞胺化合物。 〔10〕一種導熱材料,其藉由硬化〔1〕至〔9〕之任一項所述之硬化性組成物而獲得。 〔11〕一種導熱片,其由〔10〕所述之導熱材料構成。 〔12〕一種附導熱層的器件,其具有:器件;及配置於上述器件上之包含〔10〕所述之導熱材料之導熱層。 [發明效果] [1] A curable composition containing a phenolic compound, an epoxy compound, agglomerated boron nitride, and an inorganic substance X, The above-mentioned inorganic substance X is at least one selected from the group consisting of alumina and silicon dioxide, The aggregated boron nitride has an average particle diameter of 20 μm or more, The above-mentioned inorganic substance X has an average particle diameter of 0.30 μm or less. [2] The curable composition according to [1], wherein The above-mentioned inorganic substance X has an average particle diameter of 0.25 μm or less. [3] The curable composition according to [1] or [2], wherein The mass ratio of the content of the above-mentioned aggregated boron nitride to the content of the above-mentioned inorganic substance X is 5.0-25.0. [4] The curable composition according to any one of [1] to [3], which further contains a surface modifier, The above-mentioned condensed boron nitride together with the above-mentioned surface modification agent adsorbed on the surface of the above-mentioned condensed boron nitride constitute surface-modified condensed boron nitride. [5] The curable composition according to any one of [1] to [4], wherein the phenol compound includes a phenol compound having a three-skeleton skeleton and the epoxy compound includes an epoxy compound having a three-skeleton skeleton. at least one of the elements. [6] The curable composition according to any one of [1] to [5], which further contains a curing accelerator. [7] The curable composition according to [6], wherein The above-mentioned hardening accelerator includes a compound having a phosphorus atom. [8] The curable composition according to any one of [1] to [7], which further contains an ion-scavenging agent. [9] The curable composition according to any one of [1] to [8], further comprising a maleimide compound. [10] A thermally conductive material obtained by curing the curable composition described in any one of [1] to [9]. [11] A thermally conductive sheet comprising the thermally conductive material described in [10]. [12] A device with a heat-conducting layer, comprising: a device; and a heat-conducting layer comprising the heat-conducting material described in [10] disposed on the device. [Invention effect]

依本發明,能夠提供能夠形成導熱性優異之導熱材料之硬化性組成物。 又,依本發明,能夠提供一種有關上述硬化性組成物之導熱材料、導熱片及附導熱層的器件。 According to the present invention, it is possible to provide a curable composition capable of forming a thermally conductive material having excellent thermal conductivity. Also, according to the present invention, it is possible to provide a thermally conductive material, a thermally conductive sheet, and a device with a thermally conductive layer related to the above curable composition.

以下,對本發明的硬化性組成物、導熱材料、導熱片及附導熱層的器件詳細地進行說明。 以下所記載之構成要件的說明,有時基於本發明的代表性實施態樣來進行,但本發明並不限於該種實施態樣。 另外,本說明書中,使用“~”表示之數值範圍係指包括記載於“~”的前後之數值作為下限值及上限值之範圍。 Hereinafter, the curable composition, thermally conductive material, thermally conductive sheet, and device with a thermally conductive layer of the present invention will be described in detail. The description of the constituent requirements described below may be based on representative embodiments of the present invention, but the present invention is not limited to such embodiments. In addition, in this specification, the numerical range represented using "-" means the range which includes the numerical value described before and after "-" as a lower limit and an upper limit.

又,本說明書中,“(甲基)丙烯醯基”的記載表示“丙烯醯基及甲基丙烯醯基中的任一者或兩者”。又,“(甲基)丙烯醯胺基”的記載表示“丙烯醯胺基及甲基丙烯醯胺基中的任一者或兩者”。“(甲基)丙烯酸”的記載表示“丙烯酸及甲基丙烯酸中的一者或兩者”。Moreover, in this specification, description of "(meth)acryl group" means "any one or both of an acryl group and a methacryl group." In addition, the description of "(meth)acrylamide group" means "any one or both of acrylamide group and methacrylamide group". The description of "(meth)acrylic acid" means "one or both of acrylic acid and methacrylic acid".

本說明書中,酸酐基可以為一價基團,亦可以為二價基團。另外,在酸酐基表示一價基團之情況下,可以舉出從順丁烯二酸酐、鄰苯二甲酸酐、均苯四甲酸酐及偏苯三甲酸酐等酸酐中去除任意的氫原子而獲得之取代基。又,在酸酐基表示二價基團之情況下,意指由*-CO-O-CO-*表示之基團。*表示鍵結位置。 本說明書中,除非另有說明,否則所標記之二價基團(例如,-COO-)的鍵結方向不受限制。例如,在由“X-Y-Z”表示之化合物中的Y為-COO-的情況下,上述化合物可以為“X-O-CO-Z”,亦可以為“X-CO-O-Z”。 In this specification, an acid anhydride group may be a monovalent group or a divalent group. In addition, in the case where the acid anhydride group represents a monovalent group, examples include those obtained by removing arbitrary hydrogen atoms from acid anhydrides such as maleic anhydride, phthalic anhydride, pyromellitic anhydride, and trimellitic anhydride. the substituent. Moreover, when an acid anhydride group represents a divalent group, it means the group represented by *-CO-O-CO-*. * Indicates bond position. In this specification, unless otherwise specified, the bonding direction of the labeled divalent group (for example, -COO-) is not limited. For example, when Y in the compound represented by "X-Y-Z" is -COO-, the compound may be "X-O-CO-Z" or "X-CO-O-Z".

在本說明書中,關於未明確記載經取代或未經取代之取代基等,如果可能,在不損害作為目標之效果之範圍內,該基團可以進一步具有取代基(例如,由後述之取代基群組Y例示之基團)。例如,在不損害作為目標之效果之範圍內,“烷基”之標記係指經取代或未經取代之烷基(可以具有取代基之烷基)。 在本說明書中,在“可以具有取代基”之情況下的取代基的種類、取代基的位置及取代基的數量並無特別限制。作為取代基的數量,例如,可以舉出1個及2個以上。作為取代基,例如,可以舉出除了氫原子以外的一價非金屬原子團,選自取代基群組Y之基團為較佳。 本說明書中,作為鹵素原子,例如,可以舉出氯原子、氟原子、溴原子及碘原子。 In this specification, regarding a substituent that is not clearly described as substituted or unsubstituted, if possible, the group may further have a substituent (for example, from a substituent described later) within a range that does not impair the intended effect. Groups exemplified by group Y). For example, the notation "alkyl" refers to a substituted or unsubstituted alkyl group (an alkyl group that may have a substituent) within the range that does not impair the intended effect. In the present specification, when "may have a substituent", the kind of the substituent, the position of the substituent, and the number of the substituent are not particularly limited. As the number of substituents, for example, one or two or more are mentioned. As the substituent, for example, a monovalent non-metallic atomic group other than a hydrogen atom can be mentioned, and a group selected from the substituent group Y is preferable. In the present specification, examples of the halogen atom include a chlorine atom, a fluorine atom, a bromine atom and an iodine atom.

(取代基群組Y) 鹵素原子(-F、-Br、-Cl及-I等)、羥基、胺基、羧酸基及其共軛鹼基、羧酸酐基、氰酸酯基、不飽和聚合性基、環氧基、氧雜環丁烷基、氮丙啶基、硫醇基、異氰酸酯基、硫代異氰酸酯基、醛基、烷氧基、烯丙氧基、烷硫基、芳硫基、烷基二硫基、芳基二硫基、N-烷基胺基、N,N-二烷基胺基、N-芳基胺基、N,N-二芳基胺基、N-烷基-N-芳基胺基、醯氧基、胺甲醯氧基、N-烷基胺甲醯氧基、N-芳基胺甲醯氧基、N,N-二烷基胺甲醯氧基、N,N-二芳基胺甲醯氧基、N-烷基-N-芳基胺甲醯氧基、烷基次硫酸基、芳基次硫酸基、醯硫基、醯胺基、N-烷基醯胺基、N-芳基醯胺基、脲基、N’-烷基脲基、N’,N’-二烷基脲基、N’-芳基脲基、N’,N’-二芳基脲基、N’-烷基-N’-芳基脲基、N-烷基脲基、N-芳基脲基、N’-烷基-N-烷基脲基、N’-烷基-N-芳基脲基、N’,N’-二烷基-N-烷基脲基、N’,N’-二烷基-N-芳基脲基、N’-芳基-N-烷基脲基、N’-芳基-N-芳基脲基、N’,N’-二芳基-N-烷基脲基、N’,N’-二芳基-N-芳基脲基、N’-烷基-N’-芳基-N-烷基脲基、N’-烷基-N’-芳基-N-芳基脲基、烷氧基羰基胺基、烯丙氧基羰基胺基、N-烷基-N-烷氧基羰基胺基、N-烷基-N-烯丙氧基羰基胺基、N-芳基-N-烷氧基羰基胺基、N-芳基-N-烯丙氧基羰基胺基、甲醯基、醯基、烷氧基羰基、烯丙氧基羰基、胺甲醯基、N-烷基胺甲醯基、N,N-二烷基胺甲醯基、N-芳基胺甲醯基、N,N-二芳基胺甲醯基、N-烷基-N-芳基胺甲醯基、烷基亞磺醯基、芳基亞磺醯基、烷基磺醯基、芳基磺醯基、磺基(-SO 3H)及其共軛鹼基、烷氧基磺醯基、烯丙氧基磺醯基、胺亞磺醯基、N-烷基胺亞磺醯基、N,N-二烷基胺亞磺醯基、N-芳基胺亞磺醯基、N,N-二芳基胺亞磺醯基、N-烷基-N-芳基胺亞磺醯基、胺磺醯基、N-烷基胺磺醯基、N,N-二烷基胺磺醯基、N-芳基胺磺醯基、N,N-二芳基胺磺醯基、N-烷基-N-芳基胺磺醯基、N-醯基胺磺醯基及其共軛鹼基、N-烷基磺醯基胺磺醯基(-SO 2NHSO 2(烷基))及其共軛鹼基、N-芳基磺醯基胺磺醯基(-SO 2NHSO 2(芳基))及其共軛鹼基、N-烷基磺醯基胺甲醯基(-CONHSO 2(烷基))及其共軛鹼基、N-芳基磺醯基胺甲醯基(-CONHSO 2(芳基))及其共軛鹼基、烷氧基甲矽烷基(-Si(O-烷基) 3)、烯丙氧基甲矽烷基(-Si(O-芳基) 3)、羥基甲矽烷基(-Si(OH) 3)及其共軛鹼基、膦醯基(-PO 3H 2)及其共軛鹼基、二烷基膦醯基(-PO 3(烷基) 2)、二芳基膦醯基(-PO 3(芳基) 2)、烷基芳基膦醯基(-PO 3(烷基)(芳基))、單烷基膦醯基(-PO 3H(烷基))及其共軛鹼基、單芳基膦醯基(-PO 3H(芳基))及其共軛鹼基、膦醯氧基(-OPO 3H 2)及其共軛鹼基、二烷基膦醯氧基(-OPO 3(烷基) 2)、二芳基膦醯氧基(-OPO 3(芳基) 2)、烷基芳基膦醯氧基(-OPO 3(烷基)(芳基))、單烷基膦醯氧基(-OPO 3H(烷基))及其共軛鹼基、單芳基膦醯氧基(-OPO 3H(芳基))及其共軛鹼基、氰基、硝基、芳基、烯基、炔基及烷基。又,如果可能,上述各基團可以進一步具有取代基(例如,上述各基團中的1個以上的基團)。例如,作為能夠選自取代基群組Y之基團還包含可以具有取代基之芳基。 在選自取代基群組Y之基團具有碳原子之情況下,作為上述基團所具有之碳數,1~20為較佳。 作為選自取代基群組Y之基團所具有之除了氫原子以外的原子的數量,1~30為較佳。 又,如果可能,該等取代基可以由取代基彼此鍵結或與經取代之基團鍵結而形成環,亦可以不形成環。例如,烷基(或者如烷氧基那樣,作為部分結構而包含烷基之基團中的烷基部分)可以為環狀的烷基(環烷基),亦可以為作為部分結構而具有1個以上的環狀結構之烷基。 (Substituent group Y) Halogen atom (-F, -Br, -Cl and -I, etc.), hydroxyl group, amine group, carboxylic acid group and its conjugate base, carboxylic anhydride group, cyanate group, unsaturated Polymerization group, epoxy group, oxetanyl group, aziridine group, thiol group, isocyanate group, thioisocyanate group, aldehyde group, alkoxy group, allyloxy group, alkylthio group, arylthio group Alkyldithiol, aryldithiol, N-alkylamino, N,N-dialkylamino, N-arylamino, N,N-diarylamino, N- Alkyl-N-arylamino, acyloxy, aminoformyloxy, N-alkylaminoformyloxy, N-arylaminoformyloxy, N,N-dialkylaminoformyl Oxygen, N,N-Diarylaminoformyloxy, N-Alkyl-N-arylaminoformyloxy, Alkylsulfoxyl, Arylsulfoxyl, Acylthio, Amide , N-alkylamide group, N-arylamide group, ureido group, N'-alkylureido group, N',N'-dialkylureido group, N'-arylureido group, N',N'-diaryl ureido, N'-alkyl-N'-aryl ureido, N-alkyl ureido, N-aryl ureido, N'-alkyl-N-aryl ureido , N'-alkyl-N-aryl ureido, N',N'-dialkyl-N-alkyl ureido, N',N'-dialkyl-N-aryl ureido, N' -aryl-N-alkylureido, N'-aryl-N-arylureido, N',N'-diaryl-N-alkylureido, N',N'-diaryl -N-aryl ureido, N'-alkyl-N'-aryl-N-alkyl ureido, N'-alkyl-N'-aryl-N-aryl ureido, alkoxycarbonyl Amino, Allyloxycarbonylamino, N-Alkyl-N-Alkoxycarbonylamino, N-Alkyl-N-allyloxycarbonylamino, N-Aryl-N-Alkoxy Carbonylamino, N-aryl-N-allyloxycarbonylamino, formyl, acyl, alkoxycarbonyl, allyloxycarbonyl, aminoformyl, N-alkylaminoformyl , N,N-dialkylaminoformyl, N-arylaminoformyl, N,N-diarylaminoformyl, N-alkyl-N-arylaminoformyl, alkyl Sulfinyl, arylsulfinyl, alkylsulfonyl, arylsulfonyl, sulfo (-SO 3 H) and its conjugate base, alkoxysulfonyl, allyloxy Sulfonyl, Aminosulfinyl, N-Alkylaminesulfinyl, N,N-Dialkylaminesulfinyl, N-Arylaminesulfinyl, N,N-Diaryl Aminosulfinyl, N-Alkyl-N-arylaminesulfinyl, Aminosulfonyl, N-Alkylaminosulfonyl, N,N-Dialkylaminosulfonyl, N-aryl Aminosulfonyl, N,N-diarylsulfamoyl, N-alkyl-N-arylsulfamoyl, N-acylsulfamoyl and its conjugate base, N-alkane Sulfonylsulfamoyl (-SO 2 NHSO 2 (alkyl)) and its conjugate base, N-arylsulfamosulfonyl (-SO 2 NHSO 2 (aryl)) and its Conjugated base, N-alkylsulfonylaminoformyl (-CONHSO 2 (alkyl)) and its conjugate base, N-arylsulfonylaminoformyl (-CON HSO 2 (aryl)) and its conjugate base, alkoxysilyl (-Si(O-alkyl) 3 ), allyloxysilyl (-Si(O-aryl) 3 ) , hydroxysilyl group (-Si(OH) 3 ) and its conjugated base, phosphonyl group (-PO 3 H 2 ) and its conjugated base, dialkylphosphonyl group (-PO 3 (alkyl ) 2 ), diarylphosphinoyl (-PO 3 (aryl) 2 ), alkylarylphosphinoyl (-PO 3 (alkyl)(aryl)), monoalkylphosphinoyl (- PO 3 H (alkyl)) and its conjugated base, monoarylphosphonyl (-PO 3 H (aryl)) and its conjugated base, phosphonyloxy (-OPO 3 H 2 ) and Its conjugate base, dialkylphosphonyloxy (-OPO 3 (alkyl) 2 ), diarylphosphonyloxy (-OPO 3 (aryl) 2 ), alkylarylphosphonyloxy (-OPO 3 (alkyl) (aryl)), monoalkylphosphonyloxy (-OPO 3 H (alkyl)) and its conjugate base, monoarylphosphonyloxy (-OPO 3 H (aryl)) and their conjugated bases, cyano, nitro, aryl, alkenyl, alkynyl and alkyl. Also, each of the above-mentioned groups may further have a substituent (for example, one or more of the above-mentioned groups) if possible. For example, the group that can be selected from the substituent group Y also includes an aryl group that may have a substituent. When the group selected from the substituent group Y has carbon atoms, 1 to 20 are preferable as the carbon number of the above-mentioned group. 1-30 are preferable as the number of atoms other than a hydrogen atom which the group selected from substituent group Y has. Also, if possible, these substituents may form a ring by bonding each other or a substituted group, or may not form a ring. For example, an alkyl group (or an alkyl part in a group including an alkyl group as a partial structure such as an alkoxy group) may be a cyclic alkyl group (cycloalkyl group), or may have 1 Alkyl groups with more than one ring structure.

[組成物] 本發明的硬化性組成物(以下,亦簡稱為“組成物”。)含有酚化合物、環氧化合物、凝聚狀氮化硼及後述之無機物X,凝聚狀氮化硼的平均粒徑為20μm以上,無機物X的平均粒徑為0.30μm以下。 以下,將平均粒徑20μm以上的凝聚狀氮化硼及平均粒徑0.30μm以下的無機物X亦簡稱為特定無機物。 [composition] The curable composition of the present invention (hereinafter also simply referred to as "composition") contains a phenolic compound, an epoxy compound, agglomerated boron nitride, and an inorganic substance X described later, and the average particle size of the agglomerated boron nitride is 20 μm or more , the average particle diameter of the inorganic substance X is 0.30 μm or less. Hereinafter, the aggregated boron nitride having an average particle diameter of 20 μm or more and the inorganic substance X having an average particle diameter of 0.30 μm or less are also simply referred to as specific inorganic substances.

雖然藉由上述結構解決本發明的課題之機制尚不明確,但本發明人等如下推測。 既定的粒徑的無機物X的平均粒徑比既定的粒徑的凝聚狀氮化硼的平均粒徑小。在導熱材料中,該種無機物X能夠存在於既定的凝聚狀氮化硼彼此之間等。其結果,推測為,在導熱材料中,特定無機物之間的空隙減少,因此導熱性優異。 以下,將使用組成物而形成之導熱材料的導熱性優異,亦稱為本發明的效果優異。 Although the mechanism by which the subject of this invention is solved by the said structure is not clear, the inventors of this invention presume as follows. The average particle diameter of the inorganic substance X with the predetermined particle diameter is smaller than the average particle diameter of the aggregated boron nitride with the predetermined particle diameter. In the thermally conductive material, such an inorganic substance X can exist between predetermined condensed boron nitrides and the like. As a result, it is presumed that in the thermally conductive material, the voids between the specific inorganic substances are reduced, so that the thermal conductivity is excellent. Hereinafter, the excellent thermal conductivity of the thermally conductive material formed by using the composition is also referred to as the excellent effect of the present invention.

以下,對組成物中所包含之成分進行詳細敘述。Hereinafter, the components contained in the composition will be described in detail.

〔酚化合物〕 本發明的組成物含有酚化合物。 酚化合物係具有1個以上直接鍵結於芳香環基之羥基(例如,酚性羥基)之化合物。 直接鍵結於酚化合物所具有之芳香環基之羥基的數量為2以上為較佳,2~10為更佳。 酚化合物具有三𠯤骨架為較佳。 “具有三𠯤骨架”係指,酚化合物在化合物中具有1個以上(例如,1~5個)的三𠯤環基。 〔Phenolic compound〕 The composition of the present invention contains a phenolic compound. The phenolic compound is a compound having one or more hydroxyl groups (for example, phenolic hydroxyl groups) directly bonded to an aromatic ring group. The number of hydroxyl groups directly bonded to the aromatic ring group of the phenol compound is preferably 2 or more, more preferably 2-10. It is preferable that the phenolic compound has a three-skeleton structure. "Having a trioxane skeleton" means that the phenol compound has one or more (for example, 1 to 5) trioxane ring groups in the compound.

(由式(Z)表示之化合物) 酚化合物係由式(Z)表示之化合物為較佳。 (compound represented by formula (Z)) The phenolic compound is preferably a compound represented by formula (Z).

[化學式1]

Figure 02_image001
[chemical formula 1]
Figure 02_image001

上述式(Z)中,由相同符號表示之基團存在複數個之情況下,只要沒有特別說明,則存在複數個之由相同符號表示之基團可以分別相同亦可以不同。In the above formula (Z), when there are plural groups represented by the same symbol, unless otherwise specified, the plural groups represented by the same symbol may be the same or different, respectively.

式(Z)中,E 1~E 6分別獨立地表示單鍵、-NH-或-NR-。 作為E 1~E 6,分別獨立地為-NH-或-NR-為較佳,-NH-為更佳。 R表示取代基。作為由R表示之取代基,例如,可以舉出碳數1~5的直鏈狀或支鏈狀的烷基。 In formula (Z), E 1 to E 6 each independently represent a single bond, -NH- or -NR-. As E 1 to E 6 , each independently being -NH- or -NR- is preferable, and -NH- is more preferable. R represents a substituent. Examples of the substituent represented by R include linear or branched alkyl groups having 1 to 5 carbon atoms.

式(Z)中,B 1表示單鍵或k+1價有機基團。B 2表示單鍵或l+1價有機基團。B 3表示單鍵或m+1價有機基團。B 4表示單鍵或n+1價有機基團。 上述k+1價有機基團、上述l+1價有機基團、上述m+1價有機基團及上述n+1價有機基團中的k、l、m及n的值與式(Z)中的k、l、m及n的值相同。 另外,r為2以上且存在複數個之m的值不同的情況下,由B 3表示之m+1價有機基團中的m的值與表示其B 3所鍵結之X 3的數量之m的值相同。 In formula (Z), B 1 represents a single bond or a k+1-valent organic group. B 2 represents a single bond or a 1+1-valent organic group. B 3 represents a single bond or an m+1-valent organic group. B 4 represents a single bond or an n+1-valent organic group. The value of k, l, m and n in the above-mentioned k+1 valent organic group, the above-mentioned l+1 valent organic group, the above-mentioned m+1 valent organic group and the above-mentioned n+1 valent organic group and the formula (Z ) in k, l, m and n have the same value. In addition, when r is 2 or more and there are a plurality of different values of m, the difference between the value of m in the m+1-valent organic group represented by B3 and the number of X3 to which B3 is bonded The value of m is the same.

作為B 1~B 4所表示之有機基團,例如,可以舉出從可以具有碳數1~20的雜原子之烴中去除j個氫原子而成之基團。另外,j個係指k+1個、l+1個、m+1個或n+1個。 其中,作為去除j個氫原子之前的烴,例如,可以舉出選自包括可以具有取代基之碳數1~20的脂肪族烴、可以具有取代基之碳數3~20的脂肪族環及可以具有取代基之碳數3~20的芳香環之群組中之1個以上的烴。又,亦可以為,對從上述烴去除j個氫原子而成之基團,進一步將選自包括-O-、-S-、-CO-、-NR N-及-SO 2-之群組中之二價連結基組合1個以上而成之基團。R N表示氫原子或取代基。 作為碳數1~20的脂肪族烴,例如,可以舉出甲烷、乙烷、丙烷、丁烷、戊烷、己烷及庚烷。 作為碳數3~20的脂肪族環,例如,可以舉出環己烷環、環庚烷環、降莰烷環及金剛烷環。 作為碳數3~20的芳香環,例如,可以舉出碳數6~20的芳香族烴環及碳數3~20的芳香族雜環。 作為碳數6~20的芳香族烴環,例如,可以舉出苯環、萘環及蒽環。 作為碳數3~20的芳香族雜環,例如,可以舉出呋喃環、吡咯環、噻吩環、吡啶環、噻唑環、咔唑環、吲哚環及苯并噻唑環。 Examples of the organic groups represented by B 1 to B 4 include groups obtained by removing j hydrogen atoms from hydrocarbons which may have heteroatoms having 1 to 20 carbon atoms. In addition, j means k+1, l+1, m+1 or n+1. Among them, as the hydrocarbon before j hydrogen atoms are removed, for example, an aliphatic hydrocarbon having 1 to 20 carbon atoms which may have a substituent, an aliphatic ring having 3 to 20 carbon atoms which may have a substituent, and One or more hydrocarbons in the group of aromatic rings having 3 to 20 carbon atoms which may have a substituent. Also, for the group obtained by removing j hydrogen atoms from the above-mentioned hydrocarbon, it may be further selected from the group including -O-, -S-, -CO-, -NR N - and -SO 2 - A group formed by combining one or more of the divalent linking groups. R N represents a hydrogen atom or a substituent. Examples of the aliphatic hydrocarbons having 1 to 20 carbon atoms include methane, ethane, propane, butane, pentane, hexane and heptane. Examples of the aliphatic ring having 3 to 20 carbon atoms include a cyclohexane ring, a cycloheptane ring, a norbornane ring, and an adamantane ring. Examples of the aromatic ring having 3 to 20 carbon atoms include an aromatic hydrocarbon ring having 6 to 20 carbon atoms and an aromatic heterocyclic ring having 3 to 20 carbon atoms. Examples of the aromatic hydrocarbon ring having 6 to 20 carbon atoms include a benzene ring, a naphthalene ring, and an anthracene ring. Examples of the aromatic heterocyclic ring having 3 to 20 carbon atoms include a furan ring, a pyrrole ring, a thiophene ring, a pyridine ring, a thiazole ring, a carbazole ring, an indole ring and a benzothiazole ring.

式(Z)中,k、l、m及n分別獨立地表示0以上的整數。其中,k、l、r×m及n的合計為2以上,2~12的整數為較佳,4~8的整數為更佳。 另外,“r×m”中的m的值係能夠存在複數個之m的平均值。 k、l、m及n分別獨立地為0~5為較佳,1~2為更佳。 其中,k為1以上(例如,1~2)為較佳,l為1以上(例如,1~2)為較佳,m為1以上(例如,1~2)為較佳,n為1以上(例如,1~2)為較佳。 另外,在k為0的情況下,B 1不具有X 1。在l為0的情況下,B 2不具有X 2。在m為0的情況下,B 3不具有X 3。在n為0的情況下,B 4不具有X 4。 又,在B 1為單鍵的情況下,k為1。在B 2為單鍵的情況下,l為1。在B 3為單鍵的情況下,m為1。在B 4為單鍵的情況下,n為1。 In formula (Z), k, l, m, and n each independently represent an integer of 0 or more. However, the total of k, l, r×m, and n is 2 or more, preferably an integer of 2-12, more preferably an integer of 4-8. In addition, the value of m in "rxm" is the average value of m which may exist in plural. Preferably, k, l, m, and n are each independently 0-5, and more preferably 1-2. Among them, k is preferably 1 or more (for example, 1-2), l is 1 or more (for example, 1-2) is better, m is 1 or more (for example, 1-2) is better, n is 1 The above (for example, 1 to 2) are preferable. Also, when k is 0, B 1 does not have X 1 . When l is 0, B 2 does not have X 2 . When m is 0, B 3 does not have X 3 . When n is 0, B 4 does not have X 4 . Also, when B 1 is a single bond, k is 1. When B 2 is a single bond, l is 1. When B 3 is a single bond, m is 1. When B 4 is a single bond, n is 1.

L表示二價有機基團。 作為二價有機基團,例如,可以舉出可以具有取代基之芳香環基、可以具有取代基之脂肪族烴基、可以具有取代基之脂肪族環基、-O-、-S-、-N(R N)-、-CO-及將該等組合而成之基團。R N表示氫原子或取代基。作為R N所表示之取代基,例如,可以舉出碳數1~5的直鏈狀的烷基及支鏈狀的烷基。 又,作為由L表示之可以具有芳香環基、脂肪族烴基及脂肪族環基之取代基,例如,可以舉出碳數1~5的直鏈狀的烷基及支鏈狀的烷基。 L represents a divalent organic group. Examples of the divalent organic group include an optionally substituted aromatic ring group, an optionally substituted aliphatic hydrocarbon group, an optionally substituted aliphatic ring group, -O-, -S-, -N (R N )-, -CO- and a combination thereof. R N represents a hydrogen atom or a substituent. Examples of the substituent represented by R N include straight-chain alkyl groups and branched-chain alkyl groups having 1 to 5 carbon atoms. Moreover, as a substituent which may have an aromatic ring group, an aliphatic hydrocarbon group, and an aliphatic ring group represented by L, a C1-C5 straight-chain alkyl group and a branched-chain alkyl group are mentioned, for example.

作為芳香環基,例如,可以舉出碳數6~20的芳香族烴環基及碳數3~20的芳香族雜環基。 作為碳數6~20的芳香族烴環基,可以舉出從芳香環去除2個氫原子而成之基團。作為上述芳香環,例如,可以舉出苯環等單環的芳香環、以及、萘環及蒽環等多環的芳香環。 作為碳數3~20的芳香族雜環基,可以舉出從芳香族雜環去除2個氫原子而成之基團。作為上述芳香族雜環,例如,可以舉出呋喃環、吡咯環、噻吩環、吡啶環及噻唑環等單環的芳香族雜環、以及、苯并噻唑環、咔唑環及吲哚環等多環的芳香族雜環。 Examples of the aromatic ring group include an aromatic hydrocarbon ring group having 6 to 20 carbon atoms and an aromatic heterocyclic group having 3 to 20 carbon atoms. Examples of the aromatic hydrocarbon ring group having 6 to 20 carbon atoms include groups obtained by removing two hydrogen atoms from the aromatic ring. Examples of the aromatic ring include monocyclic aromatic rings such as benzene rings and polycyclic aromatic rings such as naphthalene rings and anthracene rings. Examples of the aromatic heterocyclic group having 3 to 20 carbon atoms include groups obtained by removing two hydrogen atoms from the aromatic heterocyclic ring. Examples of the aromatic heterocycle include monocyclic aromatic heterocycles such as a furan ring, a pyrrole ring, a thiophene ring, a pyridine ring, and a thiazole ring, and benzothiazole rings, carbazole rings, and indole rings. Polycyclic aromatic heterocycles.

作為脂肪族烴基,例如,可以舉出碳數1~12的伸烷基,具體而言,可以舉出亞甲基、伸乙基、伸丙基、伸丁基、伸戊基、伸己基、甲基伸己基及伸庚基等。Examples of aliphatic hydrocarbon groups include alkylene groups having 1 to 12 carbon atoms, specifically, methylene groups, ethylene groups, propylidene groups, butylene groups, pentylene groups, hexylene groups, Methylhexyl and heptyl, etc.

作為脂肪族環基,例如,可以舉出從脂肪族環去除2個氫原子而成之基團。 作為上述脂肪族環,例如,可以舉出環己烷環、環庚烷環、降莰烷環及金剛烷環等。 As an aliphatic ring group, the group which removed 2 hydrogen atoms from an aliphatic ring is mentioned, for example. As said aliphatic ring, a cyclohexane ring, a cycloheptane ring, a norbornane ring, an adamantane ring, etc. are mentioned, for example.

作為可以具有取代基之芳香環基、可以具有取代基之脂肪族烴基、可以具有取代基之脂肪族環基或將-O-、-S-、-NR N-或者-CO-組合而成之基團,不僅可以為由該等的2個以上的組合構成之二價連結基,而且亦可以為將相同種類的基團(例如,芳香環基)藉由單鍵組合2個以上而成之二價連結基。 An aromatic ring group that may have a substituent, an aliphatic hydrocarbon group that may have a substituent, an aliphatic ring group that may have a substituent, or a combination of -O-, -S-, -NR N - or -CO- The group may not only be a divalent linking group consisting of two or more of these combinations, but may also be a combination of two or more of the same type of group (for example, an aromatic ring group) via a single bond. bivalent linker.

從導熱材料的導熱性更優異之觀點考慮,L的兩個末端為碳原子為較佳。末端的碳原子可以為環狀結構的一部分。 又,從導熱材料的導熱性更優異之觀點考慮,上述式(Z)中的L為具有選自包括可以具有取代基之二價芳香環基、可以具有取代基之二價脂肪族環基及可以具有碳數2以上的支鏈之伸烷基之群組中之至少1種之二價有機基團為較佳,從導熱性更優異之理由考慮,具有可以具有取代基之二價芳香環基之二價有機基團為更佳。 From the point of view of better thermal conductivity of the thermally conductive material, it is preferable that both terminals of L are carbon atoms. The terminal carbon atoms may be part of a ring structure. Also, from the viewpoint of better thermal conductivity of the thermally conductive material, L in the above formula (Z) is a divalent aromatic ring group selected from a divalent aromatic ring group that may have a substituent, a divalent aliphatic ring group that may have a substituent, and At least one divalent organic group in the group of alkylene groups that may have a branched chain having 2 or more carbon atoms is preferred, and has a divalent aromatic ring that may have a substituent in view of better thermal conductivity. The divalent organic group of the base is more preferable.

式(Z)中,r為0以上的整數。 r為0~20的整數為較佳,0~10的整數為更佳。 In formula (Z), r is an integer of 0 or more. r is preferably an integer of 0-20, more preferably an integer of 0-10.

式(Z)中,X 1~X 4分別獨立地表示具有酚性羥基之芳香環基。 “具有酚性羥基之芳香環基”只要為具有1個以上(例如,1~4個)直接鍵結於芳香環之羥基(酚性羥基)之芳香環基即可。 上述芳香環基除了上述羥基以外可以具有或不具有取代基。上述芳香環基可以為單環,亦可以為多環,亦可以作為環員原子具有雜原子。上述芳香環基的環員原子的數量為5~15為較佳,6~10為更佳,6為進一步較佳。 作為上述芳香環基,苯環基為較佳。 作為上述芳香環基除了上述羥基以外能夠具有之取代基,碳數1~6的取代基為較佳,碳數1~6的烴基為更佳,碳數1~6的直鏈狀或支鏈狀的烷基為進一步較佳。 In formula (Z), X 1 to X 4 each independently represent an aromatic ring group having a phenolic hydroxyl group. The "aromatic ring group having a phenolic hydroxyl group" should just be an aromatic ring group having one or more (for example, 1 to 4) hydroxyl groups (phenolic hydroxyl groups) directly bonded to an aromatic ring. The above-mentioned aromatic ring group may or may not have a substituent other than the above-mentioned hydroxyl group. The aforementioned aromatic ring group may be monocyclic or polycyclic, and may have a heteroatom as a ring member atom. The number of ring member atoms of the aromatic ring group is preferably 5-15, more preferably 6-10, and still more preferably 6. As the above-mentioned aromatic ring group, a phenyl ring group is preferable. As the substituent that the above-mentioned aromatic ring group may have in addition to the above-mentioned hydroxyl group, a substituent having 1 to 6 carbons is preferable, a hydrocarbon group having 1 to 6 carbons is more preferable, and a linear or branched chain having 1 to 6 carbons is more preferable. The like alkyl group is further preferred.

式(Z)中,存在k個之X 1、存在l個之X 2、存在r×m個之X 3及存在n個之X 4中的至少1個係具有酚性羥基及配置於酚性羥基的鄰位之取代基之芳香環基亦較佳。上述取代基可以僅存在於上述酚性羥基的鄰位之一處,亦可以存在於鄰位之兩處。 另外,“r×m”中的m的值係能夠存在複數個之m的平均值。 又,“配置於鄰位之取代基”為碳數1~6的取代基為較佳,碳數1~6的烴基為更佳,碳數1~6的直鏈狀或支鏈狀的烷基為進一步較佳。 換言之,由存在(k+l+r×m+n)個之X 1~X 4中的任一個表示之“具有酚性羥基之芳香環基”中,至少1個(較佳為30%以上,更佳為50%以上,進一步較佳為65%以上。較佳為100%以下,更佳為90%以下,進一步較佳為80%以下)可以表示“具有酚性羥基及配置於酚性羥基的鄰位之取代基之芳香環基”。 In formula (Z), at least one of k X 1 , l X 2 , r×m X 3 and n X 4 has a phenolic hydroxyl group and is arranged in a phenolic hydroxyl group. The aromatic ring group of the substituent at the ortho position of the hydroxyl group is also preferable. The above-mentioned substituent may exist only in one ortho-position of the above-mentioned phenolic hydroxyl group, and may exist in two ortho-positions. In addition, the value of m in "rxm" is the average value of m which may exist in plural. In addition, the "substituent arranged at the ortho position" is preferably a substituent having 1 to 6 carbons, more preferably a hydrocarbon group having 1 to 6 carbons, and a linear or branched alkyl having 1 to 6 carbons. The base is further preferred. In other words, at least one (preferably 30% or more) of the "aromatic ring group having a phenolic hydroxyl group" represented by any one of (k+l+r×m+n) X 1 to X 4 , more preferably more than 50%, more preferably more than 65%. Preferably less than 100%, more preferably less than 90%, more preferably less than 80%) can mean "having phenolic hydroxyl and disposing in phenolic The aromatic ring group of the substituent at the ortho position of the hydroxyl group".

在具有由X 1~X 4表示之酚性羥基之芳香環基中,除了“具有酚性羥基及配置於酚性羥基的鄰位之取代基之芳香環基”以外的芳香環基,可以具有或不具有除了羥基(酚性羥基)以外的取代基。 作為除了“具有酚性羥基及配置於酚性羥基的鄰位之取代基之芳香環基”以外的芳香環基,例如,可以舉出羥苯基。 由存在(k+l+r×m+n)個之X 1~X 4中的任一個表示之“具有酚性羥基之芳香環基”中,至少1個(例如,1~2個)為除了“具有酚性羥基及配置於酚性羥基的鄰位之取代基之芳香環基”以外的芳香環基亦較佳。 認為在具有由X 1~X 4表示之酚性羥基之芳香環基中,藉由還存在除了“具有酚性羥基及配置於酚性羥基的鄰位之取代基之芳香環基”以外的芳香環基,從而會破壞作為化合物整體的對稱性、降低化合物的熔點及提高由組成物形成之半硬化膜的操作性。 Among the aromatic ring groups having phenolic hydroxyl groups represented by X 1 to X 4 , the aromatic ring group other than the "aromatic ring group having a phenolic hydroxyl group and a substituent arranged at the ortho position of the phenolic hydroxyl group" may have Or it does not have a substituent other than a hydroxyl group (phenolic hydroxyl group). As an aromatic ring group other than "the aromatic ring group which has a phenolic hydroxyl group and the substituent arrange|positioned at the ortho position of a phenolic hydroxyl group", a hydroxyphenyl group is mentioned, for example. Among the "aromatic ring groups having a phenolic hydroxyl group" represented by any one of (k+l+r×m+n) X 1 to X 4 , at least one (for example, 1 to 2) is An aromatic ring group other than "the aromatic ring group which has a phenolic hydroxyl group and the substituent arrange|positioned at the ortho position to a phenolic hydroxyl group" is also preferable. It is considered that among the aromatic ring groups having phenolic hydroxyl groups represented by X 1 to X 4 , aromatic ring groups other than "aromatic ring groups having a phenolic hydroxyl group and a substituent arranged at the ortho position of the phenolic hydroxyl group" are present. The ring group will break the symmetry of the compound as a whole, lower the melting point of the compound and improve the operability of the semi-hardened film formed by the composition.

(由式(Z1)表示之化合物) 酚化合物為由式(Z1)表示之化合物亦較佳。 酚化合物包含由式(Z1)表示之化合物為較佳,酚化合物亦可以為由式(Z1)表示之化合物其本身。 由式(Z1)表示之化合物的含量相對於酚化合物的總質量為10~100質量%為較佳,25~100質量%為更佳,50~100質量%為進一步較佳。 (compound represented by formula (Z1)) It is also preferable that the phenolic compound is a compound represented by formula (Z1). The phenolic compound preferably includes a compound represented by formula (Z1), and the phenolic compound itself may be a compound represented by formula (Z1). The content of the compound represented by the formula (Z1) is preferably from 10 to 100% by mass, more preferably from 25 to 100% by mass, and still more preferably from 50 to 100% by mass, based on the total mass of the phenolic compounds.

[化學式2]

Figure 02_image003
[chemical formula 2]
Figure 02_image003

式(Z1)中,r表示0以上的整數。r為0~20的整數為較佳,0~10的整數為更佳。 L表示二價有機基團。式(Z1)中的由L表示之二價有機基團例如與式(Z1)中的由L表示之二價有機基團相同。 R Z表示氫原子或取代基。 作為由R Z表示之取代基,碳數1~6的取代基為較佳,碳數1~6的烴基為更佳,碳數1~6的直鏈狀或支鏈狀的烷基為進一步較佳。 式(Z1)中存在(3+r)個之R Z中的至少1個(較佳為30%以上,更佳為50%以上,進一步較佳為65%以上。較佳為90%以下,更佳為80%以下)可以表示取代基。 式(Z1)中存在(3+r)個之R Z中的至少1個(例如,1~2個)可以表示氫原子。 式(Z1)中的R z(較佳為取代基R z)及OH所鍵結之苯環基中,上述R z(較佳為取代基R z)存在於與上述苯環基所鍵結之NH的對位亦較佳。 In formula (Z1), r represents an integer of 0 or more. r is preferably an integer of 0-20, more preferably an integer of 0-10. L represents a divalent organic group. The divalent organic group represented by L in formula (Z1) is, for example, the same as the divalent organic group represented by L in formula (Z1). R Z represents a hydrogen atom or a substituent. As the substituent represented by R Z , a substituent having 1 to 6 carbons is preferable, a hydrocarbon group having 1 to 6 carbons is more preferable, and a linear or branched alkyl group having 1 to 6 carbons is further preferable. better. At least one (30% or more, more preferably 50% or more, further preferably 65% or more, preferably 90% or less) of (3+r) R Z in the formula (Z1), More preferably 80% or less) may represent a substituent. At least one (eg, 1 to 2) of (3+r) R Z in the formula (Z1) may represent a hydrogen atom. Among R z (preferably substituent R z ) in formula (Z1) and the phenyl ring group bonded to OH, the above R z (preferably substituent R z ) exists in the bonded phenyl ring group The para position of NH is also better.

(由式(Z2)表示之化合物) 酚化合物為由式(Z2)表示之化合物亦較佳。 酚化合物包含由式(Z2)表示之化合物為較佳,酚化合物亦可以為由式(Z2)表示之化合物其本身。由式(Z2)表示之化合物的含量相對於酚化合物的總質量為10~100質量%為較佳,25~100質量%為更佳,50~100質量%為進一步較佳。 (compound represented by formula (Z2)) It is also preferable that the phenolic compound is a compound represented by formula (Z2). The phenolic compound preferably includes a compound represented by formula (Z2), and the phenolic compound itself may be a compound represented by formula (Z2). The content of the compound represented by the formula (Z2) is preferably from 10 to 100% by mass, more preferably from 25 to 100% by mass, and still more preferably from 50 to 100% by mass, based on the total mass of the phenolic compounds.

[化學式3]

Figure 02_image005
[chemical formula 3]
Figure 02_image005

式(Z2)中,R Z表示氫原子或取代基。 存在2個之R Z中的至少一個表示取代基亦較佳,兩個表示取代基亦較佳。 作為由R Z表示之取代基,碳數1~6的取代基為較佳,碳數1~6的烴基為更佳,碳數1~6的烷基為進一步較佳。 上述烷基可以為直鏈狀,亦可以為支鏈狀。上述烷基未經取代亦較佳。 式(Z2)中的2個R z可以分別相同亦可以不同。 In formula (Z2), R Z represents a hydrogen atom or a substituent. It is also preferable that at least one of R Z present in two represents a substituent, and it is also preferable that two represent a substituent. The substituent represented by R Z is preferably a substituent having 1 to 6 carbons, more preferably a hydrocarbon group having 1 to 6 carbons, and still more preferably an alkyl group having 1 to 6 carbons. The above-mentioned alkyl group may be linear or branched. It is also preferable that the above-mentioned alkyl group is unsubstituted. The two R z in the formula (Z2) may be the same or different.

作為酚化合物,除了上述以外,亦可以包含其他酚化合物。 作為其他酚化合物,例如,可以舉出雙酚A、F、S、AD、苯二醇及苯三醇等苯多元醇、聯苯芳烷基型酚樹脂、苯酚酚醛清漆樹脂、甲酚酚醛清漆樹脂、芳香族烴甲醛樹脂改質酚樹脂、二環戊二烯酚加成型樹脂、酚芳烷基樹脂、由多價羥基化合物和甲醛合成之多價苯酚酚醛清漆樹脂、萘酚芳烷基樹脂、三羥甲基甲烷樹脂、四苯酚基乙烷樹脂、萘苯酚酚醛清漆樹脂、萘酚酚共縮酚醛清漆樹脂、萘酚甲酚共縮酚醛清漆樹脂、聯苯改質酚樹脂、聯苯改質萘酚樹脂、胺基𠯤改質酚樹脂以及含有烷氧基的芳香環改質酚醛清漆樹脂。 As a phenolic compound, other than the above, you may contain other phenolic compounds. Examples of other phenolic compounds include bisphenol A, F, S, AD, benzene polyols such as benzenediol and benzenetriol, biphenyl aralkyl type phenol resins, phenol novolak resins, cresol novolaks, etc. Resin, aromatic hydrocarbon formaldehyde resin modified phenol resin, dicyclopentadiene phenol addition type resin, phenol aralkyl resin, polyvalent phenol novolac resin synthesized from polyvalent hydroxyl compounds and formaldehyde, naphthol aralkyl resin , trimethylolmethane resin, tetraphenol-based ethane resin, naphthol phenol novolac resin, naphthol phenol co-reduced novolac resin, naphthol-cresol co-derivative novolak resin, biphenyl modified phenol resin, biphenyl modified Quality naphthol resins, amino-modified phenol resins and aromatic ring-modified novolak resins containing alkoxy groups.

酚化合物的分子量為225~2000為較佳,225~1000為更佳。 另外,在上述分子量存在分子量分佈之情況下,上述分子量為重量平均分子量。 The molecular weight of the phenolic compound is preferably 225-2000, more preferably 225-1000. In addition, when the said molecular weight exists molecular weight distribution, the said molecular weight is a weight average molecular weight.

酚化合物的羥基含量為2.0mmol/g以上為較佳,4.0mmol/g以上為更佳。上限為25.0mmol/g以下為較佳,10.0mmol/g以下為更佳。 另外,上述羥基含量意指酚化合物1g所具有之羥基(較佳為酚性羥基)的數量。 又,酚化合物除了羥基以外亦可以具有或不具有能夠與環氧化合物進行聚合反應之含有活性氫之基團(羧酸基等)。酚化合物的活性氫的含量(羥基及羧酸基等中的氫原子的合計含量)的下限為2.0mmol/g以上為較佳,4.0mmol/g以上為更佳。上限為25.0mmol/g以下為較佳,10.0mmol/g以下為更佳。 The hydroxyl group content of the phenolic compound is preferably at least 2.0 mmol/g, more preferably at least 4.0 mmol/g. The upper limit is preferably at most 25.0 mmol/g, more preferably at most 10.0 mmol/g. In addition, the said hydroxyl group content means the number of the hydroxyl group (preferably phenolic hydroxyl group) which 1 g of phenolic compounds have. In addition, the phenol compound may or may not have an active hydrogen-containing group (carboxylic acid group, etc.) capable of polymerization reaction with the epoxy compound in addition to the hydroxyl group. The lower limit of the active hydrogen content (the total content of hydrogen atoms in hydroxyl groups, carboxylic acid groups, etc.) of the phenolic compound is preferably 2.0 mmol/g or more, more preferably 4.0 mmol/g or more. The upper limit is preferably at most 25.0 mmol/g, more preferably at most 10.0 mmol/g.

本發明的組成物除了上述酚化合物以外,亦可以包含具有能夠與環氧化合物進行反應之基團之化合物(以下,亦稱為“其他含有活性氫之化合物”)。 其他含有活性氫之化合物的含量與酚化合物的含量之質量比,0~1為較佳、0~0.1為更佳,0~0.05為進一步較佳。 The composition of the present invention may contain compounds having groups capable of reacting with epoxy compounds (hereinafter also referred to as "other active hydrogen-containing compounds") in addition to the above-mentioned phenol compounds. The mass ratio of the content of other active hydrogen-containing compounds to the content of the phenolic compound is preferably from 0 to 1, more preferably from 0 to 0.1, and even more preferably from 0 to 0.05.

酚化合物可以單獨使用1種,亦可以使用2種以上。 酚化合物的含量相對於組成物的總固體成分,3.0~90.0質量%為較佳,5.0~50.0質量%為更佳,7.0~40.0質量%為進一步較佳,7.0~15.0質量%特佳。 上述固體成分意指形成導熱材料之成分,不包含溶劑。另外,形成導熱材料之成分可以為在形成導熱材料時進行反應(聚合)而化學結構改變之成分。又,只要為形成導熱材料之成分,則即使其性狀為液體狀,亦將其視為固體成分。 A phenolic compound may be used individually by 1 type, and may use 2 or more types. The content of the phenolic compound is preferably from 3.0 to 90.0% by mass, more preferably from 5.0 to 50.0% by mass, still more preferably from 7.0 to 40.0% by mass, and particularly preferably from 7.0 to 15.0% by mass, based on the total solid content of the composition. The above-mentioned solid component means a component that forms a thermally conductive material, and does not include a solvent. In addition, the components that form the thermally conductive material may be components that react (polymerize) when forming the thermally conductive material to change the chemical structure. Moreover, as long as it is a component which forms a thermally conductive material, even if its property is liquid, it is considered as a solid component.

〔環氧化合物〕 本發明的組成物含有環氧化合物。 環氧化合物係在1個分子中具有至少1個環氧基(環氧乙烷基)之化合物。 上述環氧基係從環氧乙烷環中去除1個以上的氫原子(較佳為1個氫原子)而成之基團。如果可能,上述環氧基可以進一步具有取代基(直鏈狀或支鏈狀的碳數1~5的烷基等)。 〔Epoxy compound〕 The composition of the present invention contains an epoxy compound. The epoxy compound is a compound having at least one epoxy group (oxiranyl group) in one molecule. The epoxy group is a group obtained by removing one or more hydrogen atoms (preferably one hydrogen atom) from an oxirane ring. The above-mentioned epoxy group may further have a substituent (linear or branched C 1-5 alkyl group, etc.) if possible.

環氧化合物所具有之環氧基的數量在1個分子中為2個以上為較佳,2~1000個為更佳,2~40個為進一步較佳。It is preferable that the number of the epoxy groups which an epoxy compound has is 2 or more in 1 molecule, 2-1000 are more preferable, 2-40 are still more preferable.

環氧化合物的分子量為150以上為較佳,300以上為更佳。上限為100000以下為較佳,10000以下為更佳。 另外,在上述分子量存在分子量分佈之情況下,上述分子量為重量平均分子量。 本說明書中,數量平均分子量及重量平均分子量係藉由基於凝膠滲透層析法(GPC)之聚苯乙烯換算而求得之重量平均分子量。 The molecular weight of the epoxy compound is preferably 150 or more, more preferably 300 or more. The upper limit is preferably 100,000 or less, more preferably 10,000 or less. In addition, when the said molecular weight exists molecular weight distribution, the said molecular weight is a weight average molecular weight. In the present specification, the number average molecular weight and the weight average molecular weight are weight average molecular weights obtained in terms of polystyrene by gel permeation chromatography (GPC).

環氧化合物的環氧基含量為2.0~20.0mmol/g為較佳,5.0~15.0mmol/g為更佳。 另外,上述環氧基含量意指環氧化合物1g所具有之環氧基的數量。 環氧化合物具有芳香環基(較佳為芳香族烴環基)亦較佳。 The epoxy group content of the epoxy compound is preferably 2.0-20.0 mmol/g, more preferably 5.0-15.0 mmol/g. In addition, the said epoxy group content means the number of the epoxy group which 1g of epoxy compounds have. It is also preferable that the epoxy compound has an aromatic ring group (preferably an aromatic hydrocarbon ring group).

環氧化合物可以顯示液晶性,亦可以不顯示液晶性。 亦即,環氧化合物可以為液晶化合物。換言之,可以為具有環氧基之液晶化合物。 作為環氧化合物(亦可以為液晶性的環氧化合物),例如,可以舉出至少部分地包含棒狀結構之化合物(棒狀化合物)及至少部分地包含圓盤狀結構之化合物(圓盤狀化合物)。 以下,對棒狀化合物及圓盤狀化合物進行詳細敘述。 The epoxy compound may or may not exhibit liquid crystallinity. That is, the epoxy compound may be a liquid crystal compound. In other words, it may be a liquid crystal compound having an epoxy group. Examples of epoxy compounds (which may also be liquid crystalline epoxy compounds) include compounds at least partially containing a rod-like structure (rod-shaped compound) and compounds at least partially containing a disc-like structure (disco-shaped compound). compound). Hereinafter, the rod-shaped compound and the discotic compound will be described in detail.

(棒狀化合物) 作為成為棒狀化合物的環氧化合物,可以舉出偶氮次甲基類、氧偶氮類、氰基聯苯類、氰基苯基酯類、苯甲酸酯類、環己烷羧酸苯基酯類、氰基苯基環己烷類、氰基取代苯基嘧啶類、烷氧基取代苯基嘧啶類、苯基二噁烷類、二苯乙炔類及烯基環己基卞腈類。不僅能夠使用如上所述之低分子化合物,亦能夠使用高分子化合物。上述高分子化合物係由具有低分子的反應性基之棒狀化合物聚合而成之高分子化合物。 作為較佳的棒狀化合物,可以舉出由下述式(XXI)表示之棒狀化合物。 式(XXI):Q 1-L 111-A 111-L 113-M-L 114-A 112-L 112-Q 2 (Rod-shaped compound) Examples of the epoxy compound to be a rod-shaped compound include azomethines, oxazos, cyanobiphenyls, cyanophenyl esters, benzoate esters, cyclohexyl Phenyl alkanecarboxylates, cyanophenylcyclohexanes, cyano-substituted phenylpyrimidines, alkoxy-substituted phenylpyrimidines, phenyldioxanes, tolanylacetylenes and alkenylcyclohexyl Bian nitriles. Not only low-molecular compounds as described above but also high-molecular compounds can be used. The above-mentioned high molecular compound is a high molecular compound obtained by polymerizing rod-shaped compounds having low molecular reactive groups. Preferred rod-shaped compounds include rod-shaped compounds represented by the following formula (XXI). Formula (XXI): Q 1 -L 111 -A 111 -L 113 -ML 114 -A 112 -L 112 -Q 2

式(XXI)中,Q 1及Q 2分別獨立地為環氧基,L 111、L 112、L 113及L 114分別獨立地表示單鍵或二價連結基。A 111及A 112分別獨立地表示碳數1~20的二價連結基(間隔基)。M表示液晶基。 Q 1及Q 2的環氧基可以具有取代基,亦可以不具有取代基。 In formula (XXI), Q 1 and Q 2 are each independently an epoxy group, and L 111 , L 112 , L 113 , and L 114 each independently represent a single bond or a divalent linking group. A 111 and A 112 each independently represent a divalent linking group (spacer) having 1 to 20 carbon atoms. M represents a liquid crystal group. The epoxy groups of Q1 and Q2 may or may not have a substituent.

式(XXI)中,L 111、L 112、L 113及L 114分別獨立地表示單鍵或二價連結基。 作為由L 111、L 112、L 113及L 114表示之二價連結基,分別獨立地為選自包括-O-、-S-、-CO-、-NR 112-、-CO-O-、-O-CO-O-、-CO-NR 112-、-CH 2-O-、-O-CO-NR 112-及-NR 112-CO-NR 112-之群組中之二價連結基為較佳。上述R 112為碳數1~7的烷基或氫原子。 其中,作為L 113及L 114,分別獨立地為-O-為較佳。 作為L 111及L 112,分別獨立地為單鍵為較佳。 In formula (XXI), L 111 , L 112 , L 113 and L 114 each independently represent a single bond or a divalent linking group. The divalent linking groups represented by L 111 , L 112 , L 113 and L 114 are each independently selected from the group consisting of -O-, -S-, -CO-, -NR 112 -, -CO-O-, The divalent linking group in the group of -O-CO-O-, -CO-NR 112 -, -CH 2 -O-, -O-CO-NR 112 - and -NR 112 -CO-NR 112 - is better. The above-mentioned R 112 is an alkyl group having 1 to 7 carbon atoms or a hydrogen atom. Among them, L 113 and L 114 are preferably each independently -O-. L 111 and L 112 are preferably each independently a single bond.

式(XXI)中,A 111及A 112分別獨立地表示碳數1~20的二價連結基。 二價連結基可以包含未相鄰之氧原子及硫原子等雜原子。其中,碳數1~12的伸烷基、伸烯基或伸炔基為較佳。上述伸烷基、伸烯基或伸炔基可以具有酯基,亦可以不具有酯基。 二價連結基為直鏈狀為較佳,並且上述二價連結基可以具有取代基,亦可以不具有取代基。作為取代基,例如,可以舉出鹵素原子(氟原子、氯原子及溴原子)、氰基、甲基以及乙基。 其中,作為A 111及A 112,分別獨立地為碳數1~12的伸烷基為較佳,亞甲基為更佳。 In formula (XXI), A 111 and A 112 each independently represent a divalent linking group having 1 to 20 carbon atoms. The divalent linking group may contain non-adjacent heteroatoms such as oxygen atoms and sulfur atoms. Among them, an alkylene group, an alkenylene group or an alkynylene group having 1 to 12 carbon atoms is preferred. The above-mentioned alkylene group, alkenylene group or alkynylene group may or may not have an ester group. The divalent linking group is preferably linear, and the above-mentioned divalent linking group may or may not have a substituent. Examples of substituents include halogen atoms (fluorine atoms, chlorine atoms, and bromine atoms), cyano groups, methyl groups, and ethyl groups. Among them, A 111 and A 112 are each independently preferably an alkylene group having 1 to 12 carbon atoms, and more preferably a methylene group.

式(XXI)中,M表示液晶基。作為上述液晶基,可以舉出公知的液晶基。其中,由下述式(XXII)表示之基團為較佳。 式(XXII):-(W 1-L 115n-W 2- In the formula (XXI), M represents a liquid crystal group. Examples of the liquid crystal group include known liquid crystal groups. Among them, a group represented by the following formula (XXII) is preferable. Formula (XXII): -(W 1 -L 115 ) n -W 2 -

式(XXII)中,W 1及W 2分別獨立地表示二價環狀伸烷基、二價環狀伸烯基、伸芳基或二價雜環基。L 115表示單鍵或二價連結基。n表示1~4的整數。 In formula (XXII), W 1 and W 2 each independently represent a divalent cyclic alkylene group, a divalent cyclic alkenylene group, an arylylene group, or a divalent heterocyclic group. L 115 represents a single bond or a divalent linking group. n represents an integer of 1-4.

作為W 1及W 2,例如,可以舉出1,4-環己烯二基、1,4-環己烷二基、1,4-伸苯基、嘧啶-2,5-二基、吡啶-2,5-二基、1,3,4-噻二唑-2,5-二基、1,3,4-噁二唑-2,5-二基、萘-2,6-二基、萘-1,5-二基、噻吩-2,5-二基及嗒𠯤-3,6-二基。在1,4-環己烷二基的情況下,可以為反式體及順式體的結構異構物中的任一異構物,亦可以為任意比例的混合物。其中,反式體為較佳。 W 1及W 2可以分別具有取代基。作為取代基,例如,可以舉出在上面敘述之取代基群組Y中所例示之基團,更具體而言,可以舉出鹵素原子(氟原子、氯原子、溴原子及碘原子)、氰基、碳數1~10的烷基(例如,甲基、乙基及丙基等)、碳數1~10的烷氧基(例如,甲氧基及乙氧基等)、碳數1~10的醯基(例如,甲醯基及乙醯基等)、碳數1~10的烷氧基羰基(例如,甲氧基羰基及乙氧基羰基等)、碳數1~10的醯氧基(例如,乙醯氧基及丙醯氧基等)、硝基、三氟甲基以及二氟甲基。 在W 1存在複數個之情況下,存在複數個之W 1可以分別相同亦可以不同。 Examples of W 1 and W 2 include 1,4-cyclohexenediyl, 1,4-cyclohexanediyl, 1,4-phenylene, pyrimidine-2,5-diyl, pyridine -2,5-diyl, 1,3,4-thiadiazole-2,5-diyl, 1,3,4-oxadiazole-2,5-diyl, naphthalene-2,6-diyl , naphthalene-1,5-diyl, thiophene-2,5-diyl and thiamine-3,6-diyl. In the case of 1,4-cyclohexanediyl, it may be any one of the structural isomers of the trans-isomer and the cis-isomer, or may be a mixture in any ratio. Among them, the trans form is preferred. W 1 and W 2 may each have a substituent. As the substituent, for example, the groups exemplified in the substituent group Y described above, more specifically, halogen atoms (fluorine atom, chlorine atom, bromine atom and iodine atom), cyanide group, alkyl group with 1 to 10 carbons (for example, methyl, ethyl and propyl, etc.), alkoxy group with 1 to 10 carbons (for example, methoxy and ethoxy group, etc.), carbon number with 1 to 10 Acyl group with 10 (such as formyl and acetyl, etc.), alkoxycarbonyl with 1 to 10 carbons (such as methoxycarbonyl and ethoxycarbonyl, etc.), acyloxy with 1 to 10 carbons (for example, acetyloxy and propionyloxy, etc.), nitro, trifluoromethyl and difluoromethyl. When there are plural W 1 s, the plural W 1 present may be the same or different.

式(XXII)中,L 115表示單鍵或二價連結基。作為由L 115表示之二價連結基,可以舉出在上面敘述之由L 111~L 114表示之二價連結基的具體例,例如,可以舉出-CO-O-、-CH 2-O-。 L 115存在複數個之情況下,存在複數個之L 115可以分別相同亦可以不同。 In formula (XXII), L 115 represents a single bond or a divalent linking group. Specific examples of the divalent linking group represented by L 111 to L 114 described above as the divalent linking group represented by L 115 include -CO-O-, -CH 2 -O -. When there are plural L 115 , the plural L 115 may be the same or different.

將由上述式(XXII)表示之液晶基的基本骨架中較佳之骨架例示於以下。上述液晶基亦可以在該等骨架取代有取代基。Among the basic skeletons of the liquid crystal group represented by the above formula (XXII), preferable skeletons are shown below. The above mesogenic groups may also be substituted with substituents in these skeletons.

[化學式4]

Figure 02_image007
[chemical formula 4]
Figure 02_image007

[化學式5]

Figure 02_image009
[chemical formula 5]
Figure 02_image009

其中,作為上述液晶基,從所獲得之導熱材料的導熱性更優異之觀點考慮,聯苯骨架為較佳。 另外,由式(XXI)表示之化合物能夠參閱日本特表平11-513019號公報(WO97/00600)中所記載之方法來合成。 棒狀化合物可以為具有日本特開平11-323162號公報及日本專利4118691號中所記載之液晶基之單體。 Among them, a biphenyl skeleton is preferable as the above-mentioned liquid crystal base from the viewpoint that the thermal conductivity of the obtained thermally conductive material is more excellent. In addition, the compound represented by formula (XXI) can be synthesized by referring to the method described in JP-A-11-513019 (WO97/00600). The rod-shaped compound may be a monomer having a liquid crystal group described in JP-A-11-323162 and JP-A-4118691.

又,在由式(XXI)表示之化合物中,“Q 1-L 111-”及“-L 112-Q 2”中的一者或兩者取代為二環氧丙基胺基之化合物亦較佳。 Also, among the compounds represented by the formula (XXI), one or both of "Q 1 -L 111 -" and "-L 112 -Q 2 " is substituted by a diecidylamine group. good.

其中,棒狀化合物為由式(E1)表示之化合物為較佳。Among them, the rod-shaped compound is preferably a compound represented by formula (E1).

[化學式6]

Figure 02_image011
[chemical formula 6]
Figure 02_image011

式(E1)中,L E1分別獨立地表示單鍵或二價連結基。 其中,L E1為二價連結基為較佳。 作為二價連結基為-O-、-S-、-CO-、-NH-、-CH=CH-、-C≡C-、-CH=N-、-N=N-、可以具有取代基之伸烷基或由2個以上的該等組合構成之基團為較佳,-O-伸烷基-為更佳。 另外,上述伸烷基可以為直鏈狀、支鏈狀及環狀中的任一種,碳數1~2的直鏈狀伸烷基為較佳。 存在複數個之L E1可以分別相同亦可以不同。 In the formula (E1), L E1 each independently represent a single bond or a divalent linking group. Among them, L E1 is preferably a divalent linking group. The divalent linking group is -O-, -S-, -CO-, -NH-, -CH=CH-, -C≡C-, -CH=N-, -N=N-, and may have a substituent An alkylene group or a group consisting of two or more of these combinations is preferable, and -O-alkylene group- is more preferable. In addition, the above-mentioned alkylene group may be any of linear, branched, and cyclic, and a linear alkylene group having 1 to 2 carbon atoms is preferred. Plural L E1 may be the same or different.

式(E1)中,L E2分別獨立地表示單鍵、-CH=CH-、-CO-O-、-C(-CH 3)=CH-、-CH=N-、-N=N-、-C≡C-、-N=N +(-O -)-、-CH=N +(-O -)-、-CH=CH-CO-或-CH=C(-CN)-。 其中,L E2分別獨立地為單鍵或-CO-O-為較佳。 在L E2存在複數個之情況下,存在複數個之L E2可以分別相同亦可以不同。 In the formula (E1), L E2 independently represent a single bond, -CH=CH-, -CO-O-, -C(-CH 3 )=CH-, -CH=N-, -N=N-, -C≡C-, -N=N + (-O - )-, -CH=N + (-O - )-, -CH=CH-CO-, or -CH=C(-CN)-. Among them, it is preferable that L E2 are each independently a single bond or -CO-O-. When there are plural L E2 , the plural L E2 may be the same or different.

式(E1)中,L E3分別獨立地表示單鍵或可以具有取代基之5員環或者6員環的芳香環基、5員環或者6員環的非芳香環基或由該等環構成之多環基。 作為由L E3表示之芳香環基及非芳香環基,例如,可以舉出可以具有取代基之1,4-環己烷二基、1,4-環己烯二基、1,4-伸苯基、嘧啶-2,5-二基、吡啶-2,5-二基、1,3,4-噻二唑-2,5-二基、1,3,4-噁二唑-2,5-二基、萘-2,6-二基、萘-1,5-二基、噻吩-2,5-二基及嗒𠯤-3,6-二基。在1,4-環己烷二基的情況下,可以為反式體及順式體的結構異構物中的任一異構物,亦可以為任意比例的混合物。其中,反式體為較佳。 其中,L E3為單鍵、1,4-伸苯基或1,4-環己烯二基為較佳。 由L E3表示之基團所具有之取代基分別獨立地為烷基、烷氧基、鹵素原子、氰基、硝基或乙醯基為較佳,烷基(較佳為甲基)為更佳。 另外,取代基存在複數個之情況下,取代基可以分別相同亦可以不同。 在L E3存在複數個之情況下,存在複數個之L E3可以分別相同亦可以不同。 In formula (E1), L E3 independently represents a single bond or a 5-membered or 6-membered aromatic ring group that may have a substituent, a 5-membered or 6-membered ring non-aromatic ring group, or consists of these rings The polycyclic group. Examples of the aromatic ring group and non-aromatic ring group represented by L E3 include 1,4-cyclohexanediyl, 1,4-cyclohexenediyl, 1,4-xene Phenyl, pyrimidine-2,5-diyl, pyridine-2,5-diyl, 1,3,4-thiadiazol-2,5-diyl, 1,3,4-oxadiazole-2, 5-diyl, naphthalene-2,6-diyl, naphthalene-1,5-diyl, thiophene-2,5-diyl, and naphthalene-3,6-diyl. In the case of 1,4-cyclohexanediyl, it may be any one of the structural isomers of the trans-isomer and the cis-isomer, or may be a mixture in any ratio. Among them, the trans form is preferred. Among them, L E3 is preferably a single bond, 1,4-phenylene group or 1,4-cyclohexenediyl group. The substituents of the group represented by L E3 are independently alkyl, alkoxy, halogen atom, cyano, nitro or acetyl group, and alkyl (preferably methyl) is more preferred. good. In addition, when a plurality of substituents exist, the substituents may be respectively the same or different. When there are plural L E3s , the plural L E3s may be the same or different.

式(E1)中,pe表示0以上的整數。 在pe為2以上的整數之情況下,存在複數個之(-L E3-L E2-)可以分別相同亦可以不同。 其中,pe為0~2為較佳,0或1為更佳,0為進一步較佳。 In formula (E1), pe represents an integer of 0 or more. When pe is an integer greater than or equal to 2, there are a plurality of (-L E3 -L E2 -) which may be the same or different. Among them, pe is preferably 0 to 2, more preferably 0 or 1, and even more preferably 0.

式(E1)中,L E4分別獨立地表示取代基。 作為取代基分別獨立地為烷基、烷氧基、鹵素原子、氰基、硝基或乙醯基為較佳,烷基(較佳為甲基)為更佳。 存在複數個之L E4可以分別相同亦可以不同。又,在後述之le為2以上的整數之情況下,在相同的(L E4le中存在複數個之L E4亦可以分別相同亦可以不同。 In formula (E1), L E4 each independently represent a substituent. The substituents are each independently an alkyl group, an alkoxy group, a halogen atom, a cyano group, a nitro group or an acetyl group, and an alkyl group (preferably a methyl group) is more preferable. The plural L E4 may be the same or different. In addition, when le described later is an integer of 2 or more, plural L E4 existing in the same (L E4 ) le may be the same or different.

式(E1)中,le分別獨立地表示0~4的整數。 其中,le分別獨立地為0~2為較佳。 存在複數個之le可以分別相同亦可以不同。 In formula (E1), le represents the integer of 0-4 each independently. Among them, le is preferably 0-2 each independently. Plural le may be the same or different.

又,在由式(E1)表示之化合物中,存在2個之“環氧基-L E1-”中的一者或兩者取代為二環氧丙基胺基伸烷基(較佳為二環氧丙基胺基亞甲基)之化合物亦較佳。 In addition, in the compound represented by formula (E1), one or both of the two "epoxy groups -L E1 -" are substituted by diglycidylamino alkylene (preferably bicyclic Oxypropylaminomethylene) compounds are also preferred.

在所獲得之導熱材料的導熱性更優異之觀點考慮,棒狀化合物具有聯苯骨架亦較佳。 換言之,環氧化合物具有聯苯骨架亦較佳,此時的環氧化合物為棒狀化合物為較佳。 It is also preferable that the rod-shaped compound has a biphenyl skeleton from the viewpoint of the thermal conductivity of the obtained thermally conductive material being more excellent. In other words, it is also preferable that the epoxy compound has a biphenyl skeleton, and it is preferable that the epoxy compound is a rod-shaped compound at this time.

(圓盤狀化合物) 作為圓盤狀化合物之環氧化合物至少部分地具有圓盤狀結構。 圓盤狀結構至少具有脂環或芳香環。尤其,在圓盤狀結構具有芳香環之情況下,圓盤狀化合物能夠藉由基於分子之間的π-π相互作用形成堆疊結構來形成柱狀結構。 作為圓盤狀結構,例如,可以舉出Angew.Chem.Int. Ed. 2012, 51, 7990-7993及日本特開平7-306317號公報中所記載之聯三伸苯結構以及日本特開2007-002220號公報及日本特開2010-244038號公報中所記載之三取代苯結構等。 (disc-shaped compound) Epoxy compounds which are discotic compounds at least partially have a discotic structure. The disc-shaped structure has at least an alicyclic ring or an aromatic ring. In particular, in the case where the discotic structure has an aromatic ring, the discotic compound can form a columnar structure by forming a stacked structure based on π-π interactions between molecules. As the disk-shaped structure, for example, Angew.Chem.Int.Ed. 2012, 51, 7990-7993 and the biterphenyl structure described in JP 7-306317 and JP 2007- 002220 Gazette and the trisubstituted benzene structure described in JP 2010-244038 Gazette, etc.

若作為環氧化合物使用圓盤狀化合物,則可以獲得顯示高導熱性之導熱材料。作為其理由,認為:棒狀化合物只能線性地(一維地)導熱,而圓盤狀化合物能夠沿法線方向平面地(二維地)導熱,因此導熱路徑增加,並且導熱率得以提高。When a disc-shaped compound is used as the epoxy compound, a thermally conductive material exhibiting high thermal conductivity can be obtained. The reason for this is considered to be that the rod-shaped compound can only conduct heat linearly (one-dimensionally), but the disc-shaped compound can conduct heat planarly (two-dimensionally) along the normal direction, so that the heat conduction path increases and the thermal conductivity is improved.

上述圓盤狀化合物具有3個以上的環氧基為較佳。包含具有3個以上的環氧基之圓盤狀化合物之組成物的硬化物存在玻璃轉移溫度高且耐熱性高之傾向。 圓盤狀化合物所具有之環氧基的數量為8個以下為較佳,6個以下為更佳。下限為2以上為較佳,3以上為更佳。 It is preferable that the above-mentioned discotic compound has three or more epoxy groups. A cured product of a composition containing a discotic compound having three or more epoxy groups tends to have a high glass transition temperature and high heat resistance. The number of epoxy groups that the discotic compound has is preferably 8 or less, more preferably 6 or less. The lower limit is preferably 2 or more, more preferably 3 or more.

作為圓盤狀化合物,例如,可以舉出C. Destrade et al., Mol. Crysr. Liq. Cryst., vol. 71, page 111 (1981);日本化學會編、季刊化學總說、No.22、液晶化學、第5章、第10章第2節(1994);B. Kohne et al., Angew. Chem. Soc. Chem. Comm., page 1794 (1985);J. Zhang et al., J. Am. Chem. Soc., vol. 116, page 2655 (1994)及日本專利第4592225號中所記載之化合物等中將末端中的至少1個(較佳為3個以上)作為環氧基之化合物。 作為圓盤狀化合物,例如,可以舉出Angew. Chem. Int. Ed. 2012, 51, 7990-7993及日本特開平7-306317號公報中所記載之聯三伸苯結構以及日本特開2007-002220號公報及日本特開2010-244038號公報中所記載之三取代苯結構中將末端中的至少1個(較佳為3個以上)作為環氧基之化合物。 Examples of discotic compounds include C. Destrade et al., Mol. Crysr. Liq. Cryst., vol. 71, page 111 (1981); edited by the Chemical Society of Japan, Quarterly Journal of Chemistry, No. 22 , Liquid Crystal Chemistry, Chapter 5, Chapter 10, Section 2 (1994); B. Kohne et al., Angew. Chem. Soc. Chem. Comm., page 1794 (1985); J. Zhang et al., J . Am. Chem. Soc., vol. 116, page 2655 (1994) and the compounds described in Japanese Patent No. 4592225 have at least one (preferably three or more) of the terminals as epoxy groups compound. As discotic compounds, for example, Angew. Chem. Int. Ed. 2012, 51, 7990-7993 and the biterphenyl structure described in JP-A No. 7-306317 and JP-A 2007- Among the trisubstituted benzene structures described in Publication No. 002220 and Japanese Patent Application Laid-Open No. 2010-244038, at least one (preferably three or more) of the terminals is a compound having an epoxy group.

作為圓盤狀化合物,從導熱材料的導熱性更優異之觀點考慮,在由以下示出之式(D1)~(D16)中的任一個表示之化合物為較佳。 另外,式(D1)~(D16)中,“-LQ”表示“-L-Q”,“QL-”表示“Q-L-”。 As a discotic compound, the compound represented by any one of the formulas (D1)-(D16) shown below is preferable from a viewpoint of the thermal conductivity of a thermally conductive material being more excellent. In addition, in formulas (D1) to (D16), "-LQ" represents "-L-Q", and "QL-" represents "Q-L-".

[化學式7]

Figure 02_image013
[chemical formula 7]
Figure 02_image013

[化學式8]

Figure 02_image015
[chemical formula 8]
Figure 02_image015

[化學式9]

Figure 02_image017
[chemical formula 9]
Figure 02_image017

[化學式10]

Figure 02_image019
[chemical formula 10]
Figure 02_image019

式(D1)~(D15)中,L表示二價連結基。 從導熱材料的導熱性更優異之觀點考慮,作為L,分別獨立地為伸烷基、伸烯基、伸芳基、-CO-、-NH-、-O-、-S-及選自包括該等組合之群組中之基團為較佳,組合2個以上選自包括伸烷基、伸烯基、伸芳基、-CO-、-NH-、-O-及-S-之群組中之基團而成之基團為更佳。 上述伸烷基的碳數為1~12為較佳。上述伸烯基的碳數為2~12為較佳。上述伸芳基的碳數為6~10為較佳。 上述伸烷基、上述伸烯基及上述伸芳基可以具有取代基(較佳為烷基、鹵素原子、氰基、烷氧基或醯氧基等)。 In formulas (D1) to (D15), L represents a divalent linking group. From the point of view that the thermal conductivity of the thermally conductive material is more excellent, as L, each independently is an alkylene group, an alkenylene group, an arylylene group, -CO-, -NH-, -O-, -S-, and is selected from the group consisting of The groups in the group of these combinations are preferred, and a combination of two or more groups selected from the group consisting of alkylene, alkenylene, aryl, -CO-, -NH-, -O- and -S- The group formed by the group in the group is more preferable. It is preferable that the carbon number of the said alkylene group is 1-12. It is preferable that the carbon number of the said alkenylene group is 2-12. It is preferable that the carbon number of the above-mentioned arylylene group is 6-10. The above-mentioned alkylene group, the above-mentioned alkenylene group, and the above-mentioned arylylene group may have a substituent (preferably an alkyl group, a halogen atom, a cyano group, an alkoxy group, or an acyloxy group, etc.).

作為L,例如,可以舉出由L101~L143表示之基團。在以下,左側的鍵結鍵鍵結於由式(D1)~(D15)中的任一個表示之化合物的中心結構(以下,亦簡稱為“中心環”。)側,右側的鍵結鍵鍵結於Q。 AL表示伸烷基或伸烯基,AR表示伸芳基。 由AL表示之伸烷基可以為直鏈狀,亦可以為支鏈狀。上述伸烷基的碳數為1~12為較佳。由AL表示之伸烯基可以為直鏈狀,亦可以為支鏈狀。上述伸烯基的碳數為2~12為較佳。由AR表示之伸芳基可以為單環亦可以為多環。上述伸芳基的環員原子數為6~12為較佳。 As L, the groups represented by L101-L143 are mentioned, for example. In the following, the bond on the left side is bonded to the central structure (hereinafter, also simply referred to as "central ring") of the compound represented by any of the formulas (D1) to (D15), and the bond on the right side is Ended with Q. AL represents an alkylene or alkenylene group, and AR represents an arylylene group. The alkylene group represented by AL may be linear or branched. It is preferable that the carbon number of the said alkylene group is 1-12. The alkenylene group represented by AL may be linear or branched. It is preferable that the carbon number of the said alkenylene group is 2-12. The arylylene group represented by AR may be monocyclic or polycyclic. The above-mentioned aryl group preferably has 6-12 ring member atoms.

L101:-AL-CO-O-AL- L102:-AL-CO-O-AL-O- L103:-AL-CO-O-AL-O-AL- L104:-AL-CO-O-AL-O-CO- L105:-CO-AR-O-AL- L106:-CO-AR-O-AL-O- L107:-CO-AR-O-AL-O-CO- L108:-CO-NH-AL- L109:-NH-AL-O- L110:-NH-AL-O-CO- L111:-O-AL- L112:-O-AL-O- L113:-O-AL-O-CO- L101: -AL-CO-O-AL- L102: -AL-CO-O-AL-O- L103: -AL-CO-O-AL-O-AL- L104: -AL-CO-O-AL-O-CO- L105: -CO-AR-O-AL- L106: -CO-AR-O-AL-O- L107: -CO-AR-O-AL-O-CO- L108: -CO-NH-AL- L109: -NH-AL-O- L110: -NH-AL-O-CO- L111: -O-AL- L112: -O-AL-O- L113: -O-AL-O-CO-

L114:-O-AL-O-CO-NH-AL- L115:-O-AL-S-AL- L116:-O-CO-AL-AR-O-AL-O-CO- L117:-O-CO-AR-O-AL-CO- L118:-O-CO-AR-O-AL-O-CO- L119:-O-CO-AR-O-AL-O-AL-O-CO- L120:-O-CO-AR-O-AL-O-AL-O-AL-O-CO- L121:-S-AL- L122:-S-AL-O- L123:-S-AL-O-CO- L124:-S-AL-S-AL- L125:-S-AR-AL- L126:-O-CO-AL- L127:-O-CO-AL-O- L128:-O-CO-AR-O-AL- L129:-O-CO- L130:-O-CO-AR-O-AL-O-CO-AL-S-AR- L131:-O-CO-AL-S-AR- L132:-O-CO-AR-O-AL-O-CO-AL-S-AL- L133:-O-CO-AL-S-AR- L134:-O-AL-S-AR- L135:-AL-CO-O-AL-O-CO-AL-S-AR- L136:-AL-CO-O-AL-O-CO-AL-S-AL- L137:-O-AL-O-AR- L138:-O-AL-O-CO-AR- L139:-O-AL-NH-AR- L140:-O-CO-AL-O-AR- L141:-O-CO-AR-O-AL-O-AR- L142:-AL-CO-O-AR- L143:-AL-CO-O-AL-O-AR- L114: -O-AL-O-CO-NH-AL- L115: -O-AL-S-AL- L116: -O-CO-AL-AR-O-AL-O-CO- L117: -O-CO-AR-O-AL-CO- L118: -O-CO-AR-O-AL-O-CO- L119: -O-CO-AR-O-AL-O-AL-O-CO- L120: -O-CO-AR-O-AL-O-AL-O-AL-O-CO- L121: -S-AL- L122: -S-AL-O- L123: -S-AL-O-CO- L124: -S-AL-S-AL- L125: -S-AR-AL- L126: -O-CO-AL- L127: -O-CO-AL-O- L128: -O-CO-AR-O-AL- L129: -O-CO- L130: -O-CO-AR-O-AL-O-CO-AL-S-AR- L131: -O-CO-AL-S-AR- L132: -O-CO-AR-O-AL-O-CO-AL-S-AL- L133: -O-CO-AL-S-AR- L134: -O-AL-S-AR- L135: -AL-CO-O-AL-O-CO-AL-S-AR- L136: -AL-CO-O-AL-O-CO-AL-S-AL- L137: -O-AL-O-AR- L138: -O-AL-O-CO-AR- L139: -O-AL-NH-AR- L140: -O-CO-AL-O-AR- L141: -O-CO-AR-O-AL-O-AR- L142: -AL-CO-O-AR- L143: -AL-CO-O-AL-O-AR-

式(D1)~(D15)中,Q分別獨立地表示氫原子或取代基。 作為取代基,可以舉出在上面敘述之取代基群組Y中例示之基團。更具體而言,作為取代基,可以舉出上述反應性官能基、鹵素原子、異氰酸酯基、氰基、不飽和聚合性基、環氧基、氧雜環丁烷基、氮丙啶基、硫代異氰酸酯基、醛基及磺基。 其中,在Q為除了環氧基以外的基團之情況下,Q相對於環氧基穩定為較佳。 另外,式(D1)~(D15)中,1個以上(較佳為2個以上)的Q表示環氧基。其中,從導熱材料的導熱性更優異之觀點考慮,所有的Q均表示環氧基為較佳。 另外,從環氧基的穩定性的觀點考慮,由式(D1)~(D15)表示之化合物不具有-NH-為較佳。 In formulas (D1) to (D15), Q each independently represent a hydrogen atom or a substituent. Examples of the substituent include groups exemplified in the substituent group Y described above. More specifically, examples of substituents include the above-mentioned reactive functional groups, halogen atoms, isocyanate groups, cyano groups, unsaturated polymerizable groups, epoxy groups, oxetanyl groups, aziridinyl groups, sulfur Substituted isocyanate group, aldehyde group and sulfo group. Among them, when Q is a group other than epoxy group, it is preferable that Q is stable with respect to epoxy group. In addition, in the formulas (D1) to (D15), one or more (preferably two or more) Qs represent epoxy groups. Among them, from the viewpoint that the heat conductivity of the heat conduction material is more excellent, it is preferable that all Qs represent an epoxy group. Moreover, it is preferable that the compound represented by formula (D1) - (D15) does not have -NH- from a viewpoint of the stability of an epoxy group.

其中,作為圓盤狀化合物,從導熱材料的導熱性更優異之觀點考慮,由式(D4)表示之化合物為較佳。換言之,圓盤狀化合物的中心環為聯伸三苯環為較佳。 從導熱材料的導熱性更優異之觀點考慮,作為由式(D4)表示之化合物為由式(XI)表示之化合物為較佳。 Among them, the compound represented by the formula (D4) is preferable as the disc-shaped compound from the viewpoint that the thermal conductivity of the heat-conducting material is more excellent. In other words, it is preferable that the central ring of the disc-shaped compound is a bi-extended triphenyl ring. It is preferable that the compound represented by the formula (D4) is a compound represented by the formula (XI) from the viewpoint that the thermal conductivity of the heat-conducting material is more excellent.

[化學式11]

Figure 02_image021
[chemical formula 11]
Figure 02_image021

式(XI)中,R 11、R 12、R 13、R 14、R 15及R 16分別獨立地表示*-X 11-L 11-P 11或*-X 12-L 12-Y 12。 另外,*表示與聯伸三苯環的鍵結位置。 R 11、R 12、R 13、R 14、R 15及R 16中,2個以上為*-X 11-L 11-P 11,3個以上為*-X 11-L 11-P 11為較佳。 其中,從導熱材料的導熱性更優異之觀點考慮,R 11及R 12中的任意1個以上、R 13及R 14中的任意1個以上以及R 15及R 16中的任意1個以上為*-X 11-L 11-P 11為較佳。 R 11、R 12、R 13、R 14、R 15及R 16均為*-X 11-L 11-P 11為更佳。此外,R 11、R 12、R 13、R 14、R 15及R 16均為相同為進一步較佳。 In formula (XI), R 11 , R 12 , R 13 , R 14 , R 15 and R 16 each independently represent *-X 11 -L 11 -P 11 or *-X 12 -L 12 -Y 12 . In addition, * represents the bonding position with the extended triphenyl ring. Among R 11 , R 12 , R 13 , R 14 , R 15 and R 16 , two or more are *-X 11 -L 11 -P 11 , and three or more are *-X 11 -L 11 -P 11 good. Among them, from the viewpoint of better thermal conductivity of the heat-conducting material, any one or more of R11 and R12 , any one or more of R13 and R14 , and any one or more of R15 and R16 are *-X 11 -L 11 -P 11 is preferred. R 11 , R 12 , R 13 , R 14 , R 15 and R 16 are all *-X 11 -L 11 -P 11 is more preferred. In addition, it is further preferred that R 11 , R 12 , R 13 , R 14 , R 15 and R 16 are all the same.

X 11分別獨立地表示單鍵、-O-、-CO-、-NH-、-O-CO-O-、-O-CO-NH-、-O-CO-S-、-CO-O-、-CO-NH-、-CO-S-、-NH-CO-NH-、-NH-CO-S-、-S-、-S-CO-NH-或-S-CO-S-。 其中,X 11分別獨立地為-O-、-O-CO-O-、-O-CO-NH-、-CO-O-或-CO-NH-為較佳,-O-、-CO-O-或-O-CO-NH-為更佳,-CO-O-為進一步較佳。 X 11 independently represent a single bond, -O-, -CO-, -NH-, -O-CO-O-, -O-CO-NH-, -O-CO-S-, -CO-O- , -CO-NH-, -CO-S-, -NH-CO-NH-, -NH-CO-S-, -S-, -S-CO-NH-, or -S-CO-S-. Among them, X 11 is independently -O-, -O-CO-O-, -O-CO-NH-, -CO-O- or -CO-NH- is preferably, -O-, -CO- O- or -O-CO-NH- is more preferable, and -CO-O- is still more preferable.

L 11分別獨立地表示單鍵或二價連結基。 作為二價連結基的例子,例如,可以舉出-O-、-CO-O-、-S-、-NH-、伸烷基(碳數為1~10為較佳,1~8為更佳,1~7為進一步較佳。)、伸芳基(碳數為6~20為較佳,6~14為更佳,6~10為進一步較佳。)及由該等組合構成之基團。 作為上述伸烷基,例如,可以舉出亞甲基、伸乙基、伸丙基、伸丁基、伸戊基、伸己基及伸庚基。 作為上述伸芳基,例如,可以舉出1,4-伸苯基、1,3-伸苯基、1,4-伸萘基、1,5-伸萘基及伸蒽基,1,4-伸苯基為較佳。 L 11 each independently represent a single bond or a divalent linking group. As examples of divalent linking groups, for example, -O-, -CO-O-, -S-, -NH-, alkylene groups (preferably 1 to 10 carbons, more preferably 1 to 8 carbons) Preferably, 1-7 is more preferably.), aryl (6-20 carbon number is more preferable, 6-14 is more preferable, 6-10 is further preferable.) and the group consisting of these combinations group. Examples of the above-mentioned alkylene group include methylene group, ethylene group, propylidene group, butylene group, pentylene group, hexylene group and heptylene group. As the above-mentioned arylylene group, for example, 1,4-phenylene group, 1,3-phenylene group, 1,4-naphthylene group, 1,5-naphthylene group and anthracenyl group, 1,4- -Phenylylene is preferred.

上述伸烷基及上述伸芳基可以分別具有取代基。取代基的數量為1~3個為較佳,1個為更佳。取代基的取代位置並無特別限制。作為取代基,鹵素原子或碳數1~3的烷基為較佳,甲基為更佳。 上述伸烷基及上述伸芳基未經取代亦較佳。其中,伸烷基未經取代為較佳。 The above-mentioned alkylene group and the above-mentioned arylylene group may each have a substituent. The number of substituents is preferably 1 to 3, more preferably 1. The substitution position of the substituent is not particularly limited. As the substituent, a halogen atom or an alkyl group having 1 to 3 carbon atoms is preferable, and a methyl group is more preferable. It is also preferable that the above-mentioned alkylene group and the above-mentioned arylylene group are unsubstituted. Among them, it is preferable that the alkylene group is unsubstituted.

作為-X 11-L 11-,例如,可以舉出上述L的例子L101~L143。 Examples of -X 11 -L 11 - include examples L101 to L143 of L described above.

P 11表示環氧基。上述環氧基可以具有取代基,亦可以不具有取代基。 P 11 represents an epoxy group. The said epoxy group may have a substituent, and may not have a substituent.

X 12與X 11相同,較佳條件亦相同。 L 12與L 11相同,較佳條件亦相同。 作為-X 12-L 12-的例子,可以舉出上述L的例子L101~L143。 X12 is the same as X11 , and the preferred conditions are also the same. L 12 is the same as L 11 , and the preferred conditions are also the same. Examples of -X 12 -L 12 - include examples L101 to L143 of L mentioned above.

Y 12表示氫原子、碳數1~20的直鏈狀、碳數1~20的支鏈狀或者碳數1~20的環狀的烷基或碳數1~20的直鏈狀、碳數1~20的支鏈狀或者碳數1~20的環狀的烷基中1個或者2個以上的亞甲基被-O-、-S-、-NH-、-N(CH 3)-、-CO-或者-CO-O-取代而成之基團。 在Y 12為碳數1~20的直鏈狀、碳數1~20的支鏈狀或者碳數1~20的環狀的烷基或碳數1~20的直鏈狀、碳數1~20的支鏈狀或者碳數1~20的環狀的烷基中1個或者2個以上的亞甲基被-O-、-S-、-NH-、-N(CH 3)-、-CO-或者-CO-O-取代之基團之情況下,Y 12中所包含之氫原子的1個以上可以被鹵素原子取代。 Y 12 represents a hydrogen atom, a straight chain with 1 to 20 carbons, a branched chain with 1 to 20 carbons, a cyclic alkyl group with 1 to 20 carbons, a straight chain with 1 to 20 carbons, a carbon number One or more methylene groups in a branched-chain or cyclic alkyl group with 1 to 20 carbon atoms are replaced by -O-, -S-, -NH-, -N(CH 3 )- , -CO- or -CO-O-substituted groups. In Y 12 , it is a straight chain with 1 to 20 carbons, a branched chain with 1 to 20 carbons, or a cyclic alkyl group with 1 to 20 carbons, or a straight chain with 1 to 20 carbons, with 1 to 20 carbons. One or two or more methylene groups in a 20-branched or cyclic alkyl group with 1 to 20 carbons are replaced by -O-, -S-, -NH-, -N(CH 3 )-, - In the case of a CO- or -CO-O-substituted group, one or more hydrogen atoms contained in Y 12 may be substituted with a halogen atom.

作為由式(XI)表示之化合物,例如,可以舉出日本特開平7-281028號公報的[0028]~[0036]段、日本特開平7-306317號公報、日本特開2005-156822號公報的[0016]~[0018]段、日本特開2006-301614號公報的[0067]~[0072]段及液晶便覽(2000年Maruzen Company,Limited出版)330頁~333頁中所記載之化合物中,將末端中的至少1個(較佳為3個以上)作為環氧基之化合物。Examples of the compound represented by the formula (XI) include paragraphs [0028] to [0036] of JP-A-7-281028, JP-A-7-306317, and JP-A-2005-156822. Among the compounds described in paragraphs [0016] to [0018] of Japanese Patent Application Laid-Open No. 2006-301614, paragraphs [0067] to [0072] and Liquid Crystal Handbook (published by Maruzen Company, Limited in 2000) on pages 330 to 333 , a compound in which at least one (preferably three or more) of the terminals is an epoxy group.

由式(XI)表示之化合物能夠依據日本特開平7-306317號公報、日本特開平7-281028號公報、日本特開2005-156822號公報及日本特開2006-301614號公報中所記載之方法來合成。The compound represented by formula (XI) can be obtained according to the methods described in JP-A-7-306317, JP-A-7-281028, JP-2005-156822 and JP-2006-301614 to synthesize.

又,從導熱材料的導熱性更優異之觀點考慮,作為圓盤狀化合物,由式(D16)表示之化合物亦較佳。Moreover, the compound represented by formula (D16) is also preferable as a discotic compound from a viewpoint of the thermal conductivity of a thermally conductive material being more excellent.

[化學式12]

Figure 02_image023
[chemical formula 12]
Figure 02_image023

式(D16)中,A 2X、A 3X及A 4X分別獨立地表示-CH=或-N=。其中,A 2X、A 3X及A 4X均為-CH=或者均為-N=為較佳。亦即,包含A 2X、A 3X及A 4X之6員環為苯環或三𠯤環為較佳。 R 17X、R 18X及R 19X分別獨立地表示*-X 211X-(Z 21X-X 212Xn21X-L 21X-Q。*表示與中心環的鍵結位置。 X 211X及X 212X分別獨立地表示單鍵、-O-、-CO-、-NH-、-O-CO-O-、-O-CO-S-、-CO-O-、-CO-NH-、-CO-S-、-NH-CO-O-、-NH-CO-NH-、-NH-CO-S-、-S-或-S-CO-S-。 Z 21X分別獨立地表示5員環或者6員環的芳香環基或5員環或者6員環的非芳香環基。 L 21X表示單鍵或二價連結基。 Q的含義與式(D1)~(D15)中的Q的含義相同,較佳範圍亦相同。式(D16)中,存在複數個之Q中,至少1個(較佳為全部)Q表示環氧基。 n21X表示0~3的整數。在n21X為2以上之情況下,存在複數個之(Z 21X-X 212X)可以相同亦可以不同。 In formula (D16), A 2X , A 3X and A 4X each independently represent -CH= or -N=. Among them, A 2X , A 3X and A 4X are all -CH= or all -N= are preferred. That is, it is preferable that the 6-membered ring including A 2X , A 3X and A 4X is a benzene ring or a tricyclic ring. R 17X , R 18X and R 19X each independently represent *-X 211X -(Z 21X -X 212X ) n21X -L 21X -Q. * Indicates the bonding position to the central ring. X 211X and X 212X independently represent a single bond, -O-, -CO-, -NH-, -O-CO-O-, -O-CO-S-, -CO-O-, -CO-NH -, -CO-S-, -NH-CO-O-, -NH-CO-NH-, -NH-CO-S-, -S-, or -S-CO-S-. Z 21X each independently represent a 5-membered or 6-membered aromatic ring group or a 5-membered or 6-membered non-aromatic ring group. L 21X represents a single bond or a divalent linking group. The meaning of Q is the same as that of Q in the formulas (D1) to (D15), and the preferable range is also the same. In the formula (D16), at least one (preferably all) of Q among the plural Qs represents an epoxy group. n21X represents an integer of 0-3. When n21X is 2 or more, a plurality of (Z 21X -X 212X ) that exist may be the same or different.

作為由式(D16)表示之化合物,由式(XII)表示之化合物為較佳。As the compound represented by formula (D16), a compound represented by formula (XII) is preferable.

[化學式13]

Figure 02_image025
[chemical formula 13]
Figure 02_image025

式(XII)中,A 2、A 3及A 4分別獨立地表示-CH=或-N=。其中,A 2、A 3及A 4均為-CH=或均為-N=為較佳。亦即,包含A 2、A 3及A 4之6員環為苯環或三𠯤環為較佳。 In formula (XII), A 2 , A 3 and A 4 each independently represent -CH= or -N=. Among them, A 2 , A 3 and A 4 are all -CH= or all are -N=, which is preferred. That is, it is preferable that the 6-membered ring including A 2 , A 3 and A 4 is a benzene ring or a tricyclic ring.

R 17、R 18及R 19分別獨立地表示*-X 211-(Z 21-X 212n21-L 21-P 21或*-X 221-(Z 22-X 222n22-Y 22。*表示與中心環的鍵結位置。 R 17、R 18及R 19中2個以上為*-X 211-(Z 21-X 212n21-L 21-P 21。從導熱材料的導熱性更優異之觀點考慮,R 17、R 18及R 19均為*-X 211-(Z 21-X 212n21-L 21-P 21為較佳。 此外,R 17、R 18及R 19均為相同為較佳。 R 17 , R 18 and R 19 each independently represent *-X 211 -(Z 21 -X 212 ) n21 -L 21 -P 21 or *-X 221 -(Z 22 -X 222 ) n22 -Y 22 . * Indicates the bonding position to the central ring. Two or more of R 17 , R 18 and R 19 are *-X 211 -(Z 21 -X 212 ) n21 -L 21 -P 21 . From the standpoint of better thermal conductivity of the thermally conductive material, R 17 , R 18 and R 19 are all *-X 211 -(Z 21 -X 212 ) n21 -L 21 -P 21 are preferred. In addition, it is preferable that R 17 , R 18 and R 19 are all the same.

X 211、X 212、X 221及X 222分別獨立地表示單鍵、-O-、-CO-、-NH-、-O-CO-O-、-CO-O-、-CO-NH-、-CO-S-、-NH-CO-O-、-NH-CO-NH-、-NH-CO-S-、-S-、-S-CO-O-或-S-CO-S-。 其中,作為X 211、X 212、X 221及X 222,分別獨立地為單鍵、-NH-、-O-、-CO-O-為較佳。 X 211 , X 212 , X 221 and X 222 each independently represent a single bond, -O-, -CO-, -NH-, -O-CO-O-, -CO-O-, -CO-NH-, -CO-S-, -NH-CO-O-, -NH-CO-NH-, -NH-CO-S-, -S-, -S-CO-O-, or -S-CO-S-. Among them, X 211 , X 212 , X 221 and X 222 are preferably each independently a single bond, -NH-, -O-, or -CO-O-.

Z 21及Z 22分別獨立地表示5員環或者6員環的芳香環基或5員環或者6員環的非芳香環基。例如,可以舉出苯環基(1,4-伸苯基及1,3-伸苯基等)以及芳香族雜環基。 Z 21 and Z 22 each independently represent a 5-membered or 6-membered aromatic ring group or a 5-membered or 6-membered non-aromatic ring group. For example, a phenyl ring group (1,4-phenylene group, 1,3-phenylene group, etc.) and an aromatic heterocyclic group are mentioned.

上述芳香環基及上述非芳香環基可以具有取代基。在具有取代基之情況下,取代基的數量為1~4個為較佳,1或2個為更佳,1個為進一步較佳。取代基的取代位置並無特別限制。作為取代基,鹵素原子或甲基為較佳。上述芳香環基及上述非芳香環基未經取代亦較佳。又,作為取代基,可以進一步具有由“-X 212-L 21-P 21”表示之基團。 The above-mentioned aromatic ring group and the above-mentioned non-aromatic ring group may have a substituent. When having a substituent, the number of substituents is preferably 1 to 4, more preferably 1 or 2, and still more preferably 1. The substitution position of the substituent is not particularly limited. As the substituent, a halogen atom or a methyl group is preferable. It is also preferable that the above-mentioned aromatic ring group and the above-mentioned non-aromatic ring group are unsubstituted. Also, as a substituent, it may further have a group represented by "-X 212 -L 21 -P 21 ".

作為芳香族雜環基,例如,可以舉出以下芳香族雜環基。Examples of the aromatic heterocyclic group include the following aromatic heterocyclic groups.

[化學式14]

Figure 02_image027
[chemical formula 14]
Figure 02_image027

式中,*表示與X 211或X 221鍵結之部位。**表示與X 212或X 222鍵結之部位。A 41及A 42分別獨立地表示次甲基或氮原子。X 4表示氧原子、硫原子或亞胺基。 A 41及A 42中的至少一者為氮原子為較佳,兩者均為氮原子為更佳。又,X 4為氧原子為較佳。 In the formula, * represents the site bonded to X211 or X221 . ** Indicates the site bonded to X 212 or X 222 . A 41 and A 42 each independently represent a methine group or a nitrogen atom. X 4 represents an oxygen atom, a sulfur atom or an imine group. It is preferable that at least one of A 41 and A 42 is a nitrogen atom, and it is more preferable that both are a nitrogen atom. Also, X 4 is preferably an oxygen atom.

在後述之n21及n22為2以上之情況下,存在複數個之(Z 21-X 212)及(Z 22-X 222)可以分別相同亦可以不同。 When n21 and n22 to be described later are 2 or more, there are a plurality of (Z 21 -X 212 ) and (Z 22 -X 222 ) which may be the same or different.

L 21分別獨立地表示單鍵或二價連結基,與在上面敘述之式(XI)中的L 11的含義相同。作為L 21,-O-、-CO-O-、-S-、-NH-、伸烷基(碳數為1~10為較佳,1~8為更佳,1~7為進一步較佳。)、伸芳基(碳數為6~20為較佳,6~14為更佳,6~10為進一步較佳。)或由該等組合構成之基團為較佳。 L 21 each independently represent a single bond or a divalent linking group, and have the same meaning as L 11 in the formula (XI) described above. As L 21 , -O-, -CO-O-, -S-, -NH-, alkylene group (preferably 1-10 carbon atoms, more preferably 1-8 carbon atoms, still more preferably 1-7 carbon atoms) ), an aryl group (preferably 6-20 carbons, more preferably 6-14, further preferably 6-10.) or a group consisting of these combinations is preferred.

在後述之n22為1以上之情況下,作為-X 212-L 21-的例子,可以同樣地舉出上述式(D1)~(D15)中的L的例子L101~L143。其中,L101~L143中的左側的鍵結鍵鍵結於化合物的中心結構(以下,亦簡稱為“中心環”)側,右側的鍵結鍵鍵結於P 21When n22 described later is 1 or more, examples of -X 212 -L 21 - include examples L101 to L143 of L in the above formulas (D1) to (D15) in the same manner. Among them, the bonds on the left side of L101 to L143 are bonded to the central structure (hereinafter, also simply referred to as “central ring”) side of the compound, and the bonds on the right side are bonded to P 21 .

P 21表示環氧基。上述環氧基可以具有取代基,亦可以不具有取代基。 P 21 represents an epoxy group. The said epoxy group may have a substituent, and may not have a substituent.

Y 22分別獨立地表示氫原子、碳數1~20的直鏈狀、碳數1~20的支鏈狀、或者碳數1~20的環狀的烷基或碳數1~20的直鏈狀、碳數1~20的支鏈狀或者碳數1~20的環狀的烷基中1個或者2個以上的亞甲基被-O-、-S-、-NH-、-N(CH 3)-、-CO-或者-CO-O-取代而成之基團,與式(XI)中的Y 12的含義相同,較佳範圍亦相同。 Y and 22 each independently represent a hydrogen atom, a straight chain having 1 to 20 carbons, a branched chain having 1 to 20 carbons, a cyclic alkyl group having 1 to 20 carbons, or a straight chain having 1 to 20 carbons One or two or more methylene groups in a branched-chain or cyclic alkyl group with 1 to 20 carbons are replaced by -O-, -S-, -NH-, -N( A group substituted by CH 3 )-, -CO- or -CO-O- has the same meaning as Y 12 in formula (XI), and the preferred range is also the same.

n21及n22分別獨立地表示0~3的整數,從導熱性更優異之觀點考慮,1~3的整數為較佳。其中,在A 2、A 3及A 4均為-CH=之情況下,n21及n22分別獨立地為2~3的整數為更佳,在A 2、A 3及A 4均為-N=之情況下,n21及n22分別獨立地為1為更佳。 n21 and n22 each independently represent the integer of 0-3, and the integer of 1-3 is preferable from a viewpoint of being more excellent in thermal conductivity. Among them, when A 2 , A 3 and A 4 are all -CH=, it is more preferable that n21 and n22 are independently integers of 2 to 3, and when A 2 , A 3 and A 4 are all -N= In this case, it is more preferable that n21 and n22 are each independently 1.

作為圓盤狀化合物的較佳例,可以舉出以下化合物。Preferable examples of discotic compounds include the following compounds.

[化學式15]

Figure 02_image029
[chemical formula 15]
Figure 02_image029

[化學式16]

Figure 02_image031
[chemical formula 16]
Figure 02_image031

[化學式17]

Figure 02_image033
Figure 02_image035
Figure 02_image037
[chemical formula 17]
Figure 02_image033
Figure 02_image035
Figure 02_image037

[化學式18]

Figure 02_image039
Figure 02_image041
Figure 02_image043
[chemical formula 18]
Figure 02_image039
Figure 02_image041
Figure 02_image043

[化學式19]

Figure 02_image045
Figure 02_image047
Figure 02_image049
[chemical formula 19]
Figure 02_image045
Figure 02_image047
Figure 02_image049

[化學式20]

Figure 02_image051
Figure 02_image053
Figure 02_image055
[chemical formula 20]
Figure 02_image051
Figure 02_image053
Figure 02_image055

另外,下述結構式中,R表示-X 212-L 21-P 21In addition, in the following structural formulas, R represents -X 212 -L 21 -P 21 .

[化學式21]

Figure 02_image057
[chemical formula 21]
Figure 02_image057

[化學式22]

Figure 02_image059
[chemical formula 22]
Figure 02_image059

關於由式(XII)表示之化合物的詳細內容及具體例,能夠參閱日本特開2010-244038號公報的[0013]~[0077]段中所記載之化合物中,將末端中的至少1個(較佳為3個以上)作為環氧基之化合物,且該內容被編入到本說明書中。For details and specific examples of the compound represented by formula (XII), see the compounds described in paragraphs [0013] to [0077] of JP-A-2010-244038, wherein at least one of the terminals ( Preferably 3 or more) as the compound of the epoxy group, and this content is incorporated into this specification.

由式(XII)表示之化合物能夠依據日本特開2010-244038號公報、日本特開2006-076992號公報及日本特開2007-002220號公報中所記載之方法來合成。The compound represented by formula (XII) can be synthesized according to the methods described in JP-A-2010-244038, JP-A-2006-076992, and JP-A-2007-002220.

另外,從降低電子密度來增強堆疊,並且容易形成柱狀集合體之觀點考慮,圓盤狀化合物係具有氫鍵性官能基之化合物亦較佳。作為氫鍵結性官能基,例如,可以舉出-O-CO-NH-、-CO-NH-、-NH-CO-NH-及-NH-CO-S-。In addition, the discotic compound is also preferably a compound having a hydrogen-bonding functional group from the viewpoint of reducing the electron density to enhance stacking and easily forming columnar aggregates. Examples of the hydrogen-bonding functional group include -O-CO-NH-, -CO-NH-, -NH-CO-NH-, and -NH-CO-S-.

(其他環氧化合物) 環氧化合物除了在上面敘述之環氧化合物以外,亦可以包含其他環氧化合物。 作為其他環氧化合物,例如,在上面敘述之由式(Z)表示之化合物、由式(Z1)表示之化合物或由式(Z2)表示之化合物中,亦能夠使用將酚性羥基替換為含環氧基之化合物。 含環氧基係作為環氧基本身之基團或係部分地包含環氧基之一價基團。 部分地包含上述環氧基之一價基團係在整個基團中具有1個以上(較佳為1~8個)環氧基之基團。 部分地包含上述環氧基之一價基團為由“-(二價烴基) M1-(-O-二價烴基-) M2-環氧基”表示之基團為較佳。在上述基團中,M1表示0或1。M2表示1以上(較佳為1~10)的整數。作為上述基團中的二價烴基,例如,可以舉出伸烷基(較佳為碳數1~6)、伸烯基(-CH=CH-等。較佳為碳數2~6)、伸炔基(-C≡C-等。較佳為碳數2~6)、伸芳基(伸苯基等。較佳為碳數6~15)及將該等組合而成之基團。上述二價烴基可以具有取代基,亦可以不具有取代基,上述二價烴基可以進一步具有含環氧基來作為取代基。可以存在複數個之上述二價烴基可以分別相同亦可以不同。 (Other Epoxy Compounds) The epoxy compound may contain other epoxy compounds in addition to the above-mentioned epoxy compounds. As other epoxy compounds, for example, in the compound represented by formula (Z), the compound represented by formula (Z1) or the compound represented by formula (Z2) described above, it is also possible to use Epoxy compounds. The epoxy group-containing group is a group that is an epoxy group itself or is a valent group partially containing an epoxy group. The valent group partly containing the said epoxy group is a group which has 1 or more (preferably 1-8) epoxy groups in the whole group. It is preferable that the valent group partly including the above epoxy group is a group represented by "-(divalent hydrocarbon group) M1 -(-O-divalent hydrocarbon group-) M2 -epoxy group". In the above groups, M1 represents 0 or 1. M2 represents an integer of 1 or more (preferably 1 to 10). Examples of divalent hydrocarbon groups in the above groups include alkylene groups (preferably having 1 to 6 carbon atoms), alkenylene groups (-CH=CH-, etc., preferably having 2 to 6 carbon atoms), Alkynylene group (-C≡C-, etc., preferably having 2 to 6 carbon atoms), arylylene group (phenylene group, etc., preferably having 6 to 15 carbon atoms), and a combination thereof. The above-mentioned divalent hydrocarbon group may or may not have a substituent, and the above-mentioned divalent hydrocarbon group may further have an epoxy-containing group as a substituent. A plurality of the above-mentioned divalent hydrocarbon groups may be present and may be the same or different.

作為其他環氧化合物,例如,亦可以舉出由式(DN)表示之環氧化合物。As other epoxy compounds, for example, epoxy compounds represented by formula (DN) can also be mentioned.

[化學式23]

Figure 02_image061
[chemical formula 23]
Figure 02_image061

式(DN)中,n DN表示0以上的整數,0~5為較佳,1為更佳。 R DN表示單鍵或二價連結基。作為二價連結基,-O-、-CO-O-、-S-、伸烷基(較佳為碳數1~10)、伸芳基(較佳為碳數6~20)或將該等組合而成之基團為較佳,伸烷基為更佳,亞甲基為進一步較佳。 In the formula (DN), n DN represents an integer of 0 or more, preferably 0 to 5, and more preferably 1. R DN represents a single bond or a divalent linking group. As a divalent linking group, -O-, -CO-O-, -S-, alkylene (preferably 1 to 10 carbons), arylylene (preferably 6 to 20 carbons) or the Groups formed by combining such groups are preferred, alkylene groups are more preferred, and methylene groups are further preferred.

作為其他環氧化合物,還可以舉出由式(E2)表示之環氧化合物。 (V-) 4-UC(-W) U(E2) As another epoxy compound, the epoxy compound represented by formula (E2) is also mentioned. (V-) 4-U C (-W) U (E2)

式(E2)中,C表示碳原子。In formula (E2), C represents a carbon atom.

式(E2)中,U表示3或4的整數。 在式(E2)中,表示V的數之“4-U”中的“U”和表示W的數之“U”表示相同的值。亦即,式(E2)係“V-C(-W) 3”或“C(-W) 4”。 In formula (E2), U represents an integer of 3 or 4. In the formula (E2), "U" in "4-U" representing the number of V and "U" representing the number of W represent the same value. That is, the formula (E2) is "VC(-W) 3 " or "C(-W) 4 ".

式(E2)中,V表示氫原子或不具有環氧基之取代基。 上述不具有環氧基之取代基係除了環氧基以外的取代基,並且係作為取代基的一部分亦不包含環氧基之取代基。 作為上述不具有環氧基之取代基,例如,可以舉出選自取代基群組Y且除了環氧基及部分地包含環氧基之基團之基團。 上述不具有環氧基之取代基為烷基為較佳,直鏈狀或支鏈狀的烷基為更佳。上述烷基的碳數為1~5為較佳。 In formula (E2), V represents a hydrogen atom or a substituent not having an epoxy group. The above-mentioned substituent not having an epoxy group is a substituent other than an epoxy group, and is a substituent not including an epoxy group as a part of the substituent. As the substituent not having the above-mentioned epoxy group, for example, a group selected from the substituent group Y and a group other than an epoxy group and a group partially containing an epoxy group can be mentioned. The above-mentioned substituent not having an epoxy group is preferably an alkyl group, and more preferably a straight-chain or branched-chain alkyl group. It is preferable that the carbon number of the said alkyl group is 1-5.

式(E2)中,W表示含環氧基。 含環氧基係作為環氧基本身之基團或係部分地包含環氧基之一價基團。 部分地包含上述環氧基之一價基團係在整個基團中具有1個以上(較佳為1~8個)環氧基之基團。 部分地包含上述環氧基之一價基團為由“-(二價烴基) M1-(-O-二價烴基-) M2-環氧基”表示之基團為較佳。在上述基團中,M1表示0或1。M2表示1以上(較佳為1~10)的整數。作為上述基團中的二價烴基,例如,可以舉出伸烷基(較佳為碳數1~6)、伸烯基(-CH=CH-等。較佳為碳數2~6)、伸炔基(-C≡C-等。較佳為碳數2~6)、伸芳基(伸苯基等。較佳為碳數6~15)及將該等組合而成之基團。上述二價烴基可以具有取代基,亦可以不具有取代基,上述二價烴基可以進一步具有含環氧基來作為取代基。可以存在複數個之上述二價烴基可以分別相同亦可以不同。 式(E2)中存在複數個之W可以分別相同亦可以不同。 In the formula (E2), W represents an epoxy group-containing group. The epoxy group-containing group is a group that is an epoxy group itself or is a valent group partially containing an epoxy group. The valent group partly containing the said epoxy group is a group which has 1 or more (preferably 1-8) epoxy groups in the whole group. It is preferable that the valent group partly including the above epoxy group is a group represented by "-(divalent hydrocarbon group) M1 -(-O-divalent hydrocarbon group-) M2 -epoxy group". In the above groups, M1 represents 0 or 1. M2 represents an integer of 1 or more (preferably 1 to 10). Examples of divalent hydrocarbon groups in the above groups include alkylene groups (preferably having 1 to 6 carbon atoms), alkenylene groups (-CH=CH-, etc., preferably having 2 to 6 carbon atoms), Alkynylene group (-C≡C-, etc., preferably having 2 to 6 carbon atoms), arylylene group (phenylene group, etc., preferably having 6 to 15 carbon atoms), and a combination thereof. The above-mentioned divalent hydrocarbon group may or may not have a substituent, and the above-mentioned divalent hydrocarbon group may further have an epoxy-containing group as a substituent. A plurality of the above-mentioned divalent hydrocarbon groups may be present and may be the same or different. In the formula (E2), there are a plurality of Ws which may be the same or different.

作為其他環氧化合物,例如,還可以舉出環氧基縮環之化合物。作為這種化合物,例如,可以舉出3,4:8,9-二環氧雙環[4.3.0]壬烷。As another epoxy compound, the compound which epoxy group condensed ring can also be mentioned, for example. Such a compound includes, for example, 3,4:8,9-diepoxybicyclo[4.3.0]nonane.

作為其他環氧化合物,例如,可以舉出雙酚A、F、S及AD等作為環氧丙基醚之雙酚A型環氧化合物、雙酚F型環氧化合物、雙酚S型環氧化合物以及雙酚AD型環氧化合物;添加了氫之雙酚A型環氧化合物及添加了氫之雙酚AD型環氧化合物;苯酚酚醛清漆型的環氧丙基醚(苯酚酚醛清漆型環氧化合物)、甲酚酚醛清漆型的環氧丙基醚(甲酚酚醛清漆型環氧化合物)及雙酚A酚醛清漆型的環氧丙基醚;二環戊二烯型的環氧丙基醚(二環戊二烯型環氧化合物);二羥基戊二烯型的環氧丙基醚(二羥基戊二烯型環氧化合物);如間苯二酚等二羥基苯的環氧丙基醚那樣的聚羥基苯型的環氧丙基醚(聚羥基苯型環氧化合物);苯聚羧酸型的環氧丙酯(苯聚羧酸型環氧化合物);三酚甲烷型環氧化合物;苯氧基樹脂;以及在側鏈具有環氧基之丙烯酸樹脂。可以將上述各化合物中的環氧丙基醚基及/或環氧丙酯基中的1個或2個以上被取代為二環氧丙基胺基或二環氧丙基胺基伸烷基(二環氧丙基胺基亞甲基等)之化合物用作環氧化合物。 上述各化合物可以具有取代基。例如,上述各化合物中所包含之芳香環基、環烷環基及/或伸烷基等可以具有除了環氧丙基醚基、環氧丙酯基、二環氧丙基胺基及/或二環氧丙基胺基伸烷基以外的取代基。 Examples of other epoxy compounds include bisphenol A type epoxy compounds, bisphenol F type epoxy compounds, bisphenol S type epoxy compounds such as bisphenol A, F, S, and AD as glycidyl ethers. Compounds and bisphenol AD-type epoxy compounds; hydrogen-added bisphenol A-type epoxy compounds and hydrogen-added bisphenol AD-type epoxy compounds; phenol novolac-type glycidyl ethers (phenol novolac-type ring Oxygen compounds), cresol novolak type glycidyl ether (cresol novolak type epoxy compound) and bisphenol A novolak type glycidyl ether; dicyclopentadiene type glycidyl ether Ethers (dicyclopentadiene-type epoxy compounds); dihydroxypentadiene-type epoxypropyl ethers (dihydroxypentadiene-type epoxy compounds); dihydroxybenzenes such as resorcinol, etc. Polyhydroxybenzene type glycidyl ether (polyhydroxybenzene type epoxy compound) such as base ether; benzene polycarboxylate type glycidyl ester (benzene polycarboxylate type epoxy compound); triphenolmethane type ring Oxygen compounds; phenoxy resins; and acrylic resins having epoxy groups in side chains. One or more of the glycidyl ether groups and/or glycidyl ester groups in the above-mentioned compounds can be substituted with a diecidylamino group or a dielycidylamino alkylene group ( Diglycidylaminomethylene, etc.) compounds are used as epoxy compounds. Each of the above compounds may have a substituent. For example, the aromatic ring group, cycloalkane ring group and/or alkylene group contained in each of the above-mentioned compounds may have Substituents other than diglycidylaminoalkylene.

環氧化合物可以單獨使用1種,亦可以使用2種以上。 環氧化合物的含量相對於組成物的總固體成分為1.0~90.0質量%為較,3.0~50.0質量%為更佳,5.0~40.0質量%為進一步較佳,5.0~10.0質量%為特佳。 An epoxy compound may be used individually by 1 type, and may use 2 or more types. The content of the epoxy compound is preferably 1.0 to 90.0% by mass, more preferably 3.0 to 50.0% by mass, further preferably 5.0 to 40.0% by mass, and particularly preferably 5.0 to 10.0% by mass, based on the total solid content of the composition.

〔酚化合物與環氧化合物的關係性〕 滿足酚化合物包含具有三𠯤骨架之酚化合物(要件1)及環氧化合物包含具有三𠯤骨架之環氧化合物(要件2)中的至少一個要件為較佳,酚化合物包含具有三𠯤骨架之酚化合物(要件1)及環氧化合物包含具有三𠯤骨架之環氧化合物(要件2)中的任一個要件為更佳,滿足酚化合物包含具有三𠯤骨架之酚化合物(要件1)且不滿足環氧化合物包含具有三𠯤骨架之環氧化合物(要件2)為進一步較佳。 組成物可以僅滿足要件1,亦可以僅滿足要件2,亦可以滿足要件1及要件2兩者。 [Relationship between phenolic compounds and epoxy compounds] It is preferable to satisfy at least one of the conditions that the phenol compound contains a phenolic compound having a three-skeleton (requirement 1) and the epoxy compound contains an epoxy compound having a three-skeleton (requirement 2), and the phenol compound contains a phenol having a three-skeleton Compound (requirement 1) and epoxy compound containing epoxy compound (requirement 2) with three-skeleton is more preferable, satisfying phenolic compound containing phenol compound with three-skeleton (requirement 1) and not satisfying ring It is still more preferable that the oxygen compound contains an epoxy compound (requirement 2) having a three-skeleton. The composition may satisfy only requirement 1, may satisfy only requirement 2, or may satisfy both requirement 1 and requirement 2.

酚化合物及環氧化合物“具有三𠯤骨架”係指,在化合物中具有1個以上(例如,1~5個)的三𠯤環基。 作為具有三𠯤骨架之酚化合物,例如,可以舉出上述的由式(Z)表示之化合物、由式(Z1)表示之化合物及由式(Z2)表示之化合物。 作為具有三𠯤骨架之環氧化合物,例如,可以舉出上述的由式(D16)表示之化合物中A 2X、A 3X及A 4X均為-N=之形態的化合物、由式(XII)表示之化合物中A 2、A 3及A 4均為-N=之形態的化合物、式(Z)中將酚性羥基替換為含環氧基之化合物、式(Z1)中將酚性羥基替換為含環氧基之化合物及式(Z2)中將酚性羥基替換為含環氧基之化合物。 The phenolic compound and the epoxy compound "having a tri-skeleton skeleton" means having one or more (for example, 1 to 5) tri-skeletal ring groups in the compound. Examples of the phenol compound having a three-skeleton structure include the compound represented by the formula (Z), the compound represented by the formula (Z1), and the compound represented by the formula (Z2). As an epoxy compound having a three-skeleton, for example, a compound in which A 2X , A 3X and A 4X are all in the form of -N= among the compounds represented by the above-mentioned formula (D16), represented by the formula (XII) Among the compounds, A 2 , A 3 and A 4 are all compounds in the form of -N=. In formula (Z), the phenolic hydroxyl group is replaced by a compound containing an epoxy group. In formula (Z1), the phenolic hydroxyl group is replaced by In the epoxy-group-containing compound and the formula (Z2), the phenolic hydroxyl group is replaced by an epoxy-group-containing compound.

在酚化合物包含具有三𠯤骨架之酚化合物之情況下(滿足要件1之情況下),具有三𠯤骨架之酚化合物的含量相對於酚化合物的總質量為超過0質量%且100質量%以下為較佳,30~100質量%為更佳,60~100質量%為進一步較佳,90~100質量%為特佳。另外,在組成物含有環氧化合物、上述環氧化合物包含具有三𠯤骨架之環氧化合物之情況下(滿足要件2之情況下),具有三𠯤骨架之環氧化合物的含量在上述較佳範圍的範圍之外亦較佳。 在環氧化合物包含具有三𠯤骨架之環氧化合物之情況下(滿足要件2之情況下),具有三𠯤骨架之環氧化合物含量相對於環氧化合物的總質量為超過0質量%且100質量%以下為較佳,30~100質量%為更佳,60~100質量%為進一步較佳,90~100質量%為特佳。另外,酚化合物包含具有三𠯤骨架之酚化合物之情況下(滿足要件1之情況下),具有三𠯤骨架之酚化合物的含量在上述較佳範圍的範圍之外亦較佳。 When the phenolic compound contains a phenolic compound having a three-skeleton structure (condition 1 is satisfied), the content of the phenol compound having a three-skeleton structure is more than 0% by mass and not more than 100% by mass relative to the total mass of the phenolic compound. Preferably, 30-100 mass % is more preferable, 60-100 mass % is further more preferable, and 90-100 mass % is especially preferable. In addition, when the composition contains an epoxy compound, and the epoxy compound includes an epoxy compound with a three-skeleton skeleton (condition 2 is satisfied), the content of the epoxy compound with a three-skeleton skeleton is within the above-mentioned preferred range It is also better to be outside the range. When the epoxy compound contains an epoxy compound having a three-skeleton skeleton (condition 2 is satisfied), the content of the epoxy compound having a three-skeleton skeleton is more than 0% by mass and 100% by mass relative to the total mass of the epoxy compound % or less is preferable, 30-100 mass % is more preferable, 60-100 mass % is still more preferable, and 90-100 mass % is especially preferable. In addition, when the phenolic compound contains a phenol compound having a three-skeleton structure (when Requirement 1 is satisfied), it is also preferable that the content of the phenol compound having a three-skeleton structure is outside the above-mentioned preferred range.

酚化合物和環氧化合物的至少一部分不是具有三𠯤骨架之化合物亦較佳。 酚化合物的全部或一部分可以不是具有三𠯤骨架之化合物,環氧化合物的全部或一部分亦可以不是具有三𠯤骨架之化合物。 從調整交聯密度以進一步提高本發明的效果之觀點考慮,具有三𠯤骨架之酚化合物和具有三𠯤骨架之環氧化合物的合計含量相對於所有酚化合物和所有環氧化合物的合計含量為超過0質量%且小於100質量%為較佳,1~90質量%為更佳,5~80質量%為進一步較佳。 It is also preferable that at least a part of the phenolic compound and the epoxy compound is not a compound having a triple skeleton. All or part of the phenolic compound does not have to be a compound having a three-skeleton structure, and all or a part of the epoxy compound does not have to be a compound having a three-skeleton structure. From the viewpoint of adjusting the crosslink density to further enhance the effect of the present invention, the total content of the phenolic compound having a three-skeleton skeleton and the epoxy compound having a three-skeleton skeleton is more than the total content of all phenolic compounds and all epoxy compounds. 0 mass % to less than 100 mass % is preferable, 1-90 mass % is more preferable, 5-80 mass % is still more preferable.

環氧化合物和酚化合物的合計含量相對於組成物的總固體成分為3~90質量%為較佳,5~50質量%為更佳,7~40質量%為進一步較佳。The total content of the epoxy compound and the phenol compound is preferably 3 to 90% by mass, more preferably 5 to 50% by mass, and still more preferably 7 to 40% by mass, based on the total solid content of the composition.

環氧化合物中所包含之環氧基的數量與酚化合物中所包含之羥基(較佳為酚性羥基)的數量之比(環氧基的數量/羥基的數量)為3/97~97/3為較佳,30/70~70/30為更佳,40/60~60/40為進一步較佳,45/55~55/45為特佳。 亦即,酚化合物與環氧化合物的含量之比成為上述“環氧基的數量/酚性羥基的數量”在上述範圍內之比為較佳。 The ratio of the number of epoxy groups contained in the epoxy compound to the number of hydroxyl groups (preferably phenolic hydroxyl groups) contained in the phenolic compound (number of epoxy groups/number of hydroxyl groups) is 3/97 to 97/ 3 is preferred, 30/70 to 70/30 is more preferred, 40/60 to 60/40 is further preferred, and 45/55 to 55/45 is particularly preferred. That is, it is preferable that the ratio of the content of the phenol compound and the epoxy compound is such that the above-mentioned "the number of epoxy groups/the number of phenolic hydroxyl groups" is within the above-mentioned range.

環氧化合物的環氧基與活性氫(可以為來自於酚性羥基之活性氫,亦可以為其他含有活性氫之化合物的活性氫)的當量比(環氧基的數量/活性氫的數量)為3/97~97/3為較佳,30/70~70/30為更佳,40/60~60/40為進一步較佳,45/55~55/45為特佳。The equivalent ratio of epoxy groups to active hydrogens (the active hydrogens from phenolic hydroxyl groups or other active hydrogen-containing compounds) of epoxy compounds (the number of epoxy groups/the number of active hydrogens) 3/97 to 97/3 is preferable, 30/70 to 70/30 is more preferable, 40/60 to 60/40 is still more preferable, and 45/55 to 55/45 is particularly preferable.

〔凝聚狀氮化硼〕 本發明的組成物含有凝聚狀氮化硼。 凝聚狀氮化硼係藉由使氮化硼(例如,鱗片狀氮化硼)的一次粒子凝聚而形成之二次凝聚粒子。 凝聚狀氮化硼的平均粒徑為20μm以上,30μm以上為較佳,40μm以上為更佳。上限為500μm以下為較佳,300μm以下為更佳,200μm以下為進一步較佳,100μm以下為特佳。 “粒徑”係指藉由以下方法測量之粒子的平均粒徑。平均粒徑能夠使用掃描型電子顯微鏡(Scanning Electron Microscope、SEM)或雷射繞射式粒徑分佈測量裝置進行測量。作為掃描型電子顯微鏡,例如,能夠使用 Hitachi High-Technologies Corporation製造之透過型顯微鏡HT7700。 對使用掃描型電子顯微鏡而獲得之粒子圖像的最大長度(Dmax:粒子圖像的輪廓上的兩個點中的最大長度)及最大長度的垂直長度(DV-max:用與最大長度平行之兩條直線夾住圖像時,垂直連接兩條直線之間之最短的長度)進行測量,將其幾何平均值(Dmax×DV-max) 1/2作為粒徑。用該方法測量100個粒子的粒徑,將其算術平均值作為粒子的平均粒徑。 凝聚狀氮化硼包含後述之表面修飾凝聚狀氮化硼為較佳。 [Aggregated Boron Nitride] The composition of the present invention contains aggregated boron nitride. Aggregated boron nitride is secondary aggregated particles formed by aggregating primary particles of boron nitride (for example, scaly boron nitride). The average particle size of the aggregated boron nitride is 20 μm or more, preferably 30 μm or more, more preferably 40 μm or more. The upper limit is preferably 500 μm or less, more preferably 300 μm or less, still more preferably 200 μm or less, and particularly preferably 100 μm or less. "Particle diameter" means the average particle diameter of particles measured by the following method. The average particle size can be measured using a scanning electron microscope (Scanning Electron Microscope, SEM) or a laser diffraction particle size distribution measuring device. As a scanning electron microscope, for example, a transmission microscope HT7700 manufactured by Hitachi High-Technologies Corporation can be used. The maximum length (Dmax: the maximum length between two points on the contour of the particle image) and the vertical length of the maximum length (DV-max: parallel to the maximum length) of the particle image obtained using a scanning electron microscope When the image is clamped by two straight lines, the shortest length between the two straight lines is vertically connected) for measurement, and the geometric mean value (Dmax×DV-max) 1/2 is taken as the particle size. The particle diameters of 100 particles are measured by this method, and the arithmetic mean thereof is taken as the average particle diameter of the particles. The condensed boron nitride preferably includes surface-modified condensed boron nitride described later.

可以對凝聚狀氮化硼進行表面處理。 另外,表面處理意指與使用了後述之表面修飾劑之表面修飾不同的處理。 推測為,藉由進行該等處理,在凝聚狀氮化硼的表面導入官能基,凝聚狀氮化硼容易與酚化合物、環氧化合物及/或後述的表面修飾劑等進行相互作用,從而所形成之導熱材料的導熱性及峰強度等得到進一步改善。 作為表面處理,例如,可以舉出電漿處理(真空電漿處理、大氣壓電漿處理及水電漿處理等)、紫外線照射處理、電暈處理、電子束照射處理、臭氧處理、燒成處理、火焰處理及氧化劑處理。作為上述氧化劑處理,可以在酸性條件下進行,亦可以在鹼性條件(pH12以上等)下進行。 Agglomerated boron nitride can be surface treated. In addition, surface treatment means a treatment different from surface modification using a surface modifying agent described later. It is presumed that by performing these treatments, functional groups are introduced into the surface of the aggregated boron nitride, and the aggregated boron nitride easily interacts with phenolic compounds, epoxy compounds, and/or surface modifiers described later, and the resulting The thermal conductivity and peak strength of the formed thermal conductive material are further improved. Examples of surface treatment include plasma treatment (vacuum plasma treatment, atmospheric pressure plasma treatment, hydroplasma treatment, etc.), ultraviolet irradiation treatment, corona treatment, electron beam irradiation treatment, ozone treatment, firing treatment, flame treatment, etc. treatment and oxidant treatment. The oxidizing agent treatment may be performed under acidic conditions, or may be performed under alkaline conditions (pH 12 or higher, etc.).

凝聚狀氮化硼可以單獨使用1種,亦可以使用2種以上。 凝聚狀氮化硼的含量相對於組成物的總固體成分為20質量%以上為較佳,50質量%以上為更佳,60質量%以上為進一步較佳。上限相對於組成物的總固體成分小於100質量%為較佳,95質量%以下為更佳,80質量%以下為進一步較佳。 Agglomerated boron nitride may be used alone or in combination of two or more. The content of the aggregated boron nitride is preferably at least 20% by mass, more preferably at least 50% by mass, and still more preferably at least 60% by mass, based on the total solid content of the composition. The upper limit is preferably less than 100 mass % with respect to the total solid content of the composition, more preferably 95 mass % or less, still more preferably 80 mass % or less.

〔無機物X〕 本發明的組成物含有無機物X。 無機物X係指選自包括氧化鋁及二氧化矽之群組中之至少1種。 無機物X的平均粒徑(氧化鋁的平均粒徑或二氧化矽的平均粒徑)為0.30μm以下,小於0.30μm為較佳、0.25μm以下為更佳,0.20μm以下為進一步較佳,0.15μm以下為特佳。下限為0.001μm以上為較佳,0.01μm以上為更佳。 上述粒徑的含義與在上面敘述之凝聚狀氮化硼中的粒徑含義相同,測量方法亦相同。 作為無機物X,氧化鋁或二氧化矽為較佳,後述之表面修飾氧化鋁或後述之表面修飾二氧化矽為更佳。 〔Inorganic substance X〕 The composition of the present invention contains an inorganic substance X. The inorganic substance X refers to at least one selected from the group consisting of alumina and silica. The average particle size of inorganic substance X (average particle size of alumina or average particle size of silica) is 0.30 μm or less, preferably less than 0.30 μm, more preferably 0.25 μm or less, more preferably 0.20 μm or less, 0.15 Below μm is particularly preferred. The lower limit is preferably at least 0.001 μm, more preferably at least 0.01 μm. The meaning of the above-mentioned particle diameter is the same as that of the above-mentioned condensed boron nitride, and the measurement method is also the same. As the inorganic substance X, alumina or silica is preferable, and surface-modified alumina described later or surface-modified silica described later is more preferable.

(氧化鋁) 氧化鋁的形狀可以為粒子狀或板狀。 作為粒子狀,例如,可以舉出米粒狀、球形狀、立方體狀、紡錘形狀、鱗片狀、凝聚狀及不定形狀。 氧化鋁亦可以為作為非氧化物所準備之鋁金屬在環境下等被氧化而產生之氧化鋁。 氧化鋁包含後述之表面修飾氧化鋁為較佳。 (alumina) The shape of alumina may be granular or plate-like. Examples of the particle shape include a rice grain shape, a spherical shape, a cubic shape, a spindle shape, a scale shape, an aggregated shape, and an indeterminate shape. Alumina may also be alumina produced by oxidizing aluminum metal prepared as a non-oxide under ambient conditions. Alumina preferably includes surface-modified alumina described later.

(二氧化矽) 二氧化矽的形狀可以為粒子狀或板狀。 作為粒子狀,例如,可以舉出米粒狀、球形狀、立方體狀、紡錘形狀、鱗片狀、凝聚狀及不定形狀,球形狀為較佳。 二氧化矽包含後述之表面修飾二氧化矽為較佳。 (silicon dioxide) The shape of silicon dioxide may be granular or plate-like. The particle shape includes, for example, a rice grain shape, a spherical shape, a cubic shape, a spindle shape, a scaly shape, an aggregated shape, and an indeterminate shape, and a spherical shape is preferable. Silica preferably includes surface-modified silica described later.

〔其他無機物〕 本發明的組成物除了在上面敘述之特定無機物以外,亦可以含有其他無機物。 作為其他無機物,只要是在上面敘述之特定無機物以外的物質,則並無特別限制。作為其他無機物,例如,可以舉出公知的無機物,亦可以使用先前用作導熱材料的無機填料之無機物。換言之,其他無機物亦可以包含選自包括平均粒徑小於20μm的凝聚狀氮化硼、平均粒徑超過0.30μm的氧化鋁及平均粒徑超過0.30μm的二氧化矽之群組中之至少1種。其中,作為其他無機物,包含選自包括平均粒徑超過0.30μm的氧化鋁及平均粒徑超過0.30μm的二氧化矽之群組中之至少1種為較佳。 〔Other inorganic substances〕 The composition of the present invention may contain other inorganic substances in addition to the specific inorganic substances described above. The other inorganic substances are not particularly limited as long as they are substances other than the specific inorganic substances described above. As another inorganic substance, a well-known inorganic substance is mentioned, for example, and the inorganic substance used as the inorganic filler of a thermally-conductive material beforehand can also be used. In other words, other inorganic substances may also contain at least one selected from the group consisting of agglomerated boron nitride with an average particle size of less than 20 μm, alumina with an average particle size of more than 0.30 μm, and silicon dioxide with an average particle size of more than 0.30 μm. . Among them, as the other inorganic substances, it is preferable to contain at least one selected from the group consisting of alumina having an average particle diameter of more than 0.30 μm and silica having an average particle diameter of more than 0.30 μm.

作為其他無機物,例如,可以舉出無機氮化物及無機氧化物。 其他無機物的形狀可以為粒子狀、膜狀或板狀。作為粒子狀,例如,可以舉出米粒狀、球形狀、立方體狀、紡錘形狀、鱗片狀、凝聚狀及不定形狀。 其他無機物可以包含後述之其他表面修飾無機物。 Examples of other inorganic substances include inorganic nitrides and inorganic oxides. The shape of other inorganic substances may be particle, film or plate. Examples of the particle shape include a rice grain shape, a spherical shape, a cubic shape, a spindle shape, a scale shape, an aggregated shape, and an indeterminate shape. Other inorganic substances may include other surface-modifying inorganic substances described later.

作為無機氮化物,例如,可以舉出氮化硼(BN)、氮化碳(C 3N 4)、氮化矽(Si 3N 4)、氮化鎵(GaN)、氮化銦(InN)、氮化鋁(AlN)、氮化鉻(Cr 2N)、氮化銅(Cu 3N)、氮化鐵(Fe 4N)、氮化鐵(Fe 3N)、氮化鑭(LaN)、氮化鋰(Li 3N)、氮化鎂(Mg 3N 2)、氮化鉬(Mo 2N)、氮化鈮(NbN)、氮化鉭(TaN)、氮化鈦(TiN)、氮化鎢(W 2N)、二氮化鎢(WN 2)、氮化釔(YN)及氮化鋯(ZrN)。 Examples of inorganic nitrides include boron nitride (BN), carbon nitride (C 3 N 4 ), silicon nitride (Si 3 N 4 ), gallium nitride (GaN), and indium nitride (InN). , aluminum nitride (AlN), chromium nitride (Cr 2 N), copper nitride (Cu 3 N), iron nitride (Fe 4 N), iron nitride (Fe 3 N), lanthanum nitride (LaN) , lithium nitride (Li 3 N), magnesium nitride (Mg 3 N 2 ), molybdenum nitride (Mo 2 N), niobium nitride (NbN), tantalum nitride (TaN), titanium nitride (TiN), Tungsten nitride (W 2 N), tungsten dinitride (WN 2 ), yttrium nitride (YN) and zirconium nitride (ZrN).

作為無機氧化物,例如,可以舉出氧化鋯(ZrO 2)、氧化鈦(TiO 2)、氧化鐵(Fe 2O 3、FeO、Fe 3O 4)、氧化銅(CuO、Cu 2O)、氧化鋅(ZnO)、氧化釔(Y 2O 3)、氧化鈮(Nb 2O 5)、氧化鉬(MoO 3)、氧化銦(In 2O 3、In 2O)、氧化錫(SnO 2)、氧化鉭(Ta 2O 5)、氧化鎢(WO 3、W 2O 5)、氧化鉛(PbO、PbO 2)、氧化鉍(Bi 2O 3)、氧化鈰(CeO 2、Ce 2O 3)、氧化銻(Sb 2O 3、Sb 2O 5)、氧化鍺(GeO 2、GeO)、氧化鑭(La 2O 3)及氧化釕(RuO 2)。 無機氧化物與後述之無機系離子捕捉劑不同亦較佳。 無機氧化物亦可以為作為非氧化物所準備之金屬在環境下等被氧化而產生之氧化物。 其他無機物可以單獨使用1種,亦可以使用2種以上。 Examples of inorganic oxides include zirconium oxide (ZrO 2 ), titanium oxide (TiO 2 ), iron oxide (Fe 2 O 3 , FeO, Fe 3 O 4 ), copper oxide (CuO, Cu 2 O), Zinc oxide (ZnO), yttrium oxide (Y 2 O 3 ), niobium oxide (Nb 2 O 5 ), molybdenum oxide (MoO 3 ), indium oxide (In 2 O 3 , In 2 O), tin oxide (SnO 2 ) , tantalum oxide (Ta 2 O 5 ), tungsten oxide (WO 3 , W 2 O 5 ), lead oxide (PbO, PbO 2 ), bismuth oxide (Bi 2 O 3 ), cerium oxide (CeO 2 , Ce 2 O 3 ), antimony oxide (Sb 2 O 3 , Sb 2 O 5 ), germanium oxide (GeO 2 , GeO), lanthanum oxide (La 2 O 3 ) and ruthenium oxide (RuO 2 ). It is also preferable that the inorganic oxide is different from the inorganic ion-scavenging agent described later. The inorganic oxide may be an oxide produced by oxidizing a metal prepared as a non-oxide under ambient conditions or the like. The other inorganic substances may be used alone or in combination of two or more.

無機物X可以單獨使用1種,亦可以使用2種以上。 無機物X的含量相對於組成物的總固體成分為0.1質量%以上為較佳,1質量%以上為更佳,2質量%以上為進一步較佳。上限相對於組成物的總固體成分為50質量%以下為較佳,30質量%以下為更佳,20質量%以下為進一步較佳,15質量%以下為特佳,8質量%以下為最佳。 The inorganic substance X may be used alone or in combination of two or more. The content of the inorganic substance X is preferably at least 0.1% by mass, more preferably at least 1% by mass, and still more preferably at least 2% by mass, based on the total solid content of the composition. The upper limit is preferably 50% by mass or less, more preferably 30% by mass or less, still more preferably 20% by mass or less, particularly preferably 15% by mass or less, most preferably 8% by mass or less, relative to the total solid content of the composition. .

凝聚狀氮化硼的含量與無機物X的含量之質量比(凝聚狀氮化硼的含量/無機物X的含量)為0.6~99.0為較佳,1.0~30.0為更佳,3.0~25.0為進一步較佳,5.0~25.0為特佳,7.0~25.0為最佳。The mass ratio of the content of condensed boron nitride to the content of inorganic substance X (content of condensed boron nitride/content of inorganic substance X) is preferably 0.6 to 99.0, more preferably 1.0 to 30.0, and more preferably 3.0 to 25.0. Good, 5.0-25.0 is very good, 7.0-25.0 is the best.

其他無機物的含量相對於組成物的總固體成分為1質量%以上為較佳,3質量%以上為更佳。上限相對於組成物的總固體成分為30質量%以下為較佳,20質量%以下為更佳,15質量%以下為進一步較佳。 凝聚狀氮化硼的含量與其他無機物及無機物X的合計含量之質量比(凝聚狀氮化硼的含量/其他無機物及無機物X的合計含量)為1.0~50.0為較佳,1.0~30.0為更佳,1.0~10.0為進一步較佳。 The content of other inorganic substances is preferably at least 1% by mass, more preferably at least 3% by mass, based on the total solid content of the composition. The upper limit is preferably 30% by mass or less, more preferably 20% by mass or less, and still more preferably 15% by mass or less with respect to the total solid content of the composition. The mass ratio of the content of condensed boron nitride to the total content of other inorganic substances and inorganic substances X (content of condensed boron nitride/total content of other inorganic substances and inorganic substances X) is preferably 1.0 to 50.0, more preferably 1.0 to 30.0 Good, and 1.0 to 10.0 is still more preferable.

〔表面修飾劑、表面修飾凝聚狀氮化硼及表面修飾無機物X〕 本發明的組成物可以進一步含有表面修飾劑作為與上述成分不同的成分。 表面修飾劑係對上述的凝聚狀氮化硼、無機物X及其他無機物進行表面修飾之成分。 表面修飾係指在特定無機物的表面的至少一部分吸附有有機物之狀態。吸附的形態並無特別限定,只要為鍵結狀態即可。亦即,表面修飾亦包括有機物的一部分脫離而獲得之有機基團鍵結於特定無機物的表面之狀態。鍵結可以為共價鍵、配位鍵、離子鍵、氫鍵、範德華鍵(van der Waals bond)及金屬鍵中的任一種。可以進行表面修飾以在表面的至少一部分形成單分子膜。單分子膜為藉由有機分子的化學吸附而形成之單層膜,被稱為Self-Assembled Mono Layer(自組裝單分子層)(SAM)。另外,本說明書中,表面修飾可以僅對無機物的表面的一部分進行,亦可以對無機物的整個表面進行。 〔Surface modification agent, surface modification condensed boron nitride and surface modification inorganic substance X〕 The composition of the present invention may further contain a surface modifier as a component other than the above components. The surface modifier is a component for surface modification of the above-mentioned condensed boron nitride, inorganic substance X and other inorganic substances. Surface modification refers to a state in which an organic substance is adsorbed on at least a part of the surface of a specific inorganic substance. The form of adsorption is not particularly limited, as long as it is in a bonded state. That is, surface modification also includes a state in which an organic group obtained by detaching a part of an organic substance is bonded to the surface of a specific inorganic substance. The bond may be any of covalent bond, coordinate bond, ionic bond, hydrogen bond, van der Waals bond (van der Waals bond) and metallic bond. Surface modification may be performed to form a monomolecular film on at least a portion of the surface. Monomolecular film is a monolayer film formed by chemical adsorption of organic molecules, which is called Self-Assembled Mono Layer (SAM). In addition, in the present specification, surface modification may be performed on only a part of the surface of the inorganic substance, or may be performed on the entire surface of the inorganic substance.

(表面修飾特定無機物) 經表面修飾之特定無機物係指用表面修飾劑進行了表面修飾之特定無機物(以下,亦稱為“表面修飾特定無機物”。)。 亦即,表面修飾無機物係包含特定無機物及吸附於上述特定無機物的表面上之表面修飾劑之材料。亦即,特定無機物可以與吸附於特定無機物的表面上之表面修飾劑一起構成表面修飾特定無機物。 又,本發明中,藉由組成物含有表面修飾特定無機物,組成物可以含有特定無機物及表面修飾劑。 組成物中的特定無機物的其一部分或全部可以與表面修飾劑一起構成表面修飾特定無機物。例如,在組成物中可以存在構成一部分特定無機物的表面修飾特定無機物的同時不參與表面修飾特定無機物的構成之特定無機物。 組成物中的表面修飾劑的其一部分或全部可以與特定無機物一起構成表面修飾特定無機物。例如,在組成物中可以存在由一部分表面修飾劑構成表面修飾特定無機物的同時不參與表面修飾特定無機物的構成之表面修飾劑。 表面修飾特定無機物例如能夠使特定無機物與表面修飾劑接觸而形成。 具體而言,可以在將特定無機物、表面修飾劑及構成本發明的組成物之其他成分進行混合並製造本發明的組成物之過程中在組成物中形成表面修飾特定無機物。又,可以藉由在溶劑中混合特定無機物及表面修飾劑而製備包含表面修飾特定無機物之混合液並藉由濾出等方法從上述混合液中分離表面修飾特定無機物以獲得被分離之表面修飾特定無機物。可以使用被分離之表面修飾特定無機物來製備本發明的組成物。 (Specific inorganic substances for surface modification) The surface-modified specific inorganic substance refers to a specific inorganic substance surface-modified with a surface modifying agent (hereinafter, also referred to as "surface-modified specific inorganic substance"). That is, the surface-modifying inorganic substance is a material including a specific inorganic substance and a surface modifier adsorbed on the surface of the above-mentioned specific inorganic substance. That is, the specific inorganic substance can constitute a surface-modified specific inorganic substance together with a surface modifying agent adsorbed on the surface of the specific inorganic substance. Also, in the present invention, since the composition contains the specific inorganic substance for surface modification, the composition may contain the specific inorganic substance and the surface modifying agent. Part or all of the specific inorganic substance in the composition may constitute the surface-modifying specific inorganic substance together with the surface modifier. For example, the specific inorganic substance that does not participate in the composition of the specific inorganic substance for surface modification may exist in the composition while constituting a part of the specific inorganic substance for surface modification. A part or all of the surface modifying agent in the composition may constitute the specific inorganic substance for surface modification together with the specific inorganic substance. For example, a surface-modifying agent may be present in the composition while constituting a part of the surface-modifying specific inorganic substance and not participating in the constitution of the specific surface-modifying inorganic substance. The surface-modified specific inorganic substance can be formed, for example, by bringing the specific inorganic substance into contact with a surface modifier. Specifically, the specific inorganic substance for surface modification can be formed in the composition during the process of mixing the specific inorganic substance, a surface modifier, and other components constituting the composition of the present invention to produce the composition of the present invention. In addition, it is possible to prepare a mixed liquid containing a surface-modified specific inorganic substance by mixing a specific inorganic substance and a surface modifying agent in a solvent, and separate the surface-modified specific inorganic substance from the above-mentioned mixed liquid by a method such as filtration to obtain the separated surface-modified specific inorganic substance. Inorganic matter. The composition of the present invention can be prepared using the isolated surface-modifying specific inorganic substance.

(表面修飾劑) 作為表面修飾劑,可以舉出、長鏈烷基脂肪酸等羧酸、有機膦酸、有機磷酸酯及有機矽烷分子(矽烷偶合劑)等公知的表面修飾劑、日本特開2009-502529號公報、日本特開2001-192500號公報以及日本專利4694929號公報中所記載之表面修飾劑。 (surface modifier) Examples of surface modifiers include known surface modifiers such as carboxylic acids such as long-chain alkyl fatty acids, organic phosphonic acids, organic phosphoric acid esters, and organosilane molecules (silane coupling agents), JP-A-2009-502529, A surface modifier described in Japanese Patent Application Laid-Open No. 2001-192500 and Japanese Patent No. 4694929.

作為上述矽烷偶合劑,例如,可以舉出具有直接鍵結於Si原子之水解性基之化合物。 作為上述水解性基,例如,可以舉出烷氧基(較佳為碳數1~10)及氯原子等鹵素原子。 矽烷偶合劑所具有之直接鍵結於Si原子之水解性基的數量為1個以上為較佳,2個以上為更佳,3個以上為進一步更佳。上限為10000為較佳。 矽烷偶合劑具有反應性基亦較佳。 作為上述反應性基,例如,可以舉出環氧基、氧雜環丁烷基、乙烯基、(甲基)丙烯醯基、苯乙烯基、胺基、異氰酸酯基、巰基及酸酐基。 矽烷偶合劑所具有之反應性基的數量為1個以上為較佳,2個以上為更佳,3個以上為進一步更佳。上限為10000以下為較佳。 作為矽烷偶合劑,例如,可以舉出3-胺基丙基三乙氧基矽烷、3-(2-胺基乙基)胺基丙基三乙氧基矽烷、3-胺基丙基三甲氧基矽烷、3-(2-胺基乙基)胺基丙基三甲氧基矽烷、N-苯基-3-胺基丙基三甲氧基矽烷、3-巰基三乙氧基矽烷及3-脲丙基三乙氧基矽烷。 As said silane coupling agent, the compound which has the hydrolyzable group directly bonded to Si atom is mentioned, for example. Examples of the hydrolyzable group include alkoxy groups (preferably having 1 to 10 carbon atoms) and halogen atoms such as chlorine atoms. The number of hydrolyzable groups directly bonded to Si atoms that the silane coupling agent has is preferably 1 or more, more preferably 2 or more, and still more preferably 3 or more. The upper limit is preferably 10000. It is also preferable that the silane coupling agent has a reactive group. Examples of the above reactive group include epoxy group, oxetanyl group, vinyl group, (meth)acryl group, styryl group, amine group, isocyanate group, mercapto group and acid anhydride group. The number of reactive groups that the silane coupling agent has is preferably 1 or more, more preferably 2 or more, and still more preferably 3 or more. The upper limit is preferably 10000 or less. As the silane coupling agent, for example, 3-aminopropyltriethoxysilane, 3-(2-aminoethyl)aminopropyltriethoxysilane, 3-aminopropyltrimethoxysilane, 3-(2-aminoethyl)aminopropyltrimethoxysilane, N-phenyl-3-aminopropyltrimethoxysilane, 3-mercaptotriethoxysilane and 3-urea Propyltriethoxysilane.

在本發明的組成物含有表面修飾劑之情況下,可以預先製作表面修飾特定無機物,並將其作為組成物的原料的一部分而使用。亦即,可以將預先製作之表面修飾特定無機物與組成物的其他各種成分進行混合,藉此作為包含於預先製作之表面修飾無機物中之形態而將表面修飾劑及特定無機物的全部或一部分導入到組成物中。 又,可以將除了以包含於表面修飾特定無機物中之形態導入之表面修飾劑及無機物以外的、未形成有表面修飾無機物之狀態的表面修飾劑及/或特定無機物與組成物的其他成分進行混合,並在組成物中導入表面修飾劑及/或特定無機物的全部或一部分。在該情況下,在進行混合的過程中,表面修飾劑吸附於特定無機物的表面,在組成物中形成表面修飾特定無機物亦較佳。又,在該情況下,表面修飾劑的一部分可以以並非有助於形成表面修飾特定無機物之狀態存在於組成物中。 另外,在上面對特定無機物的態樣進行了敘述,但在上述說明中可以將特定無機物替換為其他無機物。亦即,其他無機物亦可以依據上述態樣進行表面修飾。 When the composition of the present invention contains a surface modifying agent, the specific inorganic substance for surface modification can be prepared in advance and used as a part of the raw materials of the composition. That is, it is possible to mix the prefabricated surface-modifying inorganic substance with other various components of the composition, thereby introducing all or part of the surface modifying agent and the specific inorganic substance into the form contained in the prefabricated surface-modifying inorganic substance. in the composition. In addition, other than the surface modifying agent and the inorganic substance introduced in the form contained in the surface-modifying specific inorganic substance, the surface modifying agent and/or the specific inorganic substance in the state where the surface-modifying inorganic substance is not formed may be mixed with other components of the composition , and introduce all or part of the surface modifier and/or specific inorganic substances into the composition. In this case, it is also preferable that the surface modifier is adsorbed on the surface of the specific inorganic substance during the mixing process, and that the surface-modified specific inorganic substance is formed in the composition. Also, in this case, a part of the surface modifier may exist in the composition in a state that does not contribute to the formation of the specific inorganic substance for surface modification. In addition, although the aspect of the specific inorganic substance was described above, the specific inorganic substance may be replaced with another inorganic substance in the above description. That is, other inorganic substances can also be surface-modified according to the above-mentioned aspects.

表面修飾劑可以單獨使用1種,亦可以使用2種以上。 表面修飾劑的含量相對於組成物的總固體成分為0.005~5質量%為較佳,0.05~3質量%為更佳。 表面修飾劑的含量相對於所有無機物的總質量為0.01~10質量%為較佳,0.10~5質量%為更佳。另外,所有無機物係指在上面敘述之特定無機物及其他無機物的合計含量。 表面修飾劑的質量與特定無機物的質量之質量比(吸附於特定無機物表面上之表面修飾劑的質量/特定無機物的質量)為0.00001~0.5為較佳,0.0001~0.1為更佳。 表面修飾特定無機物的含量相對於組成物的總固體成分為20質量%以上為較佳,50質量%以上為更佳,60質量%以上為進一步較佳,75質量%以上為特佳。上限為小於100質量%為較佳,95質量%以下為更佳,85質量%以下為進一步較佳。 A surface modifier may be used individually by 1 type, and may use 2 or more types. The content of the surface modifier is preferably 0.005 to 5% by mass, more preferably 0.05 to 3% by mass, based on the total solid content of the composition. The content of the surface modifier is preferably 0.01 to 10% by mass, more preferably 0.10 to 5% by mass, based on the total mass of all inorganic substances. In addition, all inorganic substances refer to the total content of the above-mentioned specific inorganic substances and other inorganic substances. The mass ratio of the mass of the surface modifier to the mass of the specific inorganic substance (mass of the surface modifier adsorbed on the surface of the specific inorganic substance/mass of the specific inorganic substance) is preferably 0.00001-0.5, more preferably 0.0001-0.1. The content of the specific surface-modifying inorganic substance is preferably 20% by mass or more, more preferably 50% by mass or more, still more preferably 60% by mass or more, and particularly preferably 75% by mass or more, based on the total solid content of the composition. The upper limit is preferably less than 100% by mass, more preferably at most 95% by mass, and still more preferably at most 85% by mass.

〔酸酐〕 組成物可以含有酸酐。 酸酐係具有1個以上的酸酐基(由-CO-O-CO-表示之基團)之化合物。 〔Acid anhydride〕 The composition may contain an acid anhydride. An acid anhydride is a compound having one or more acid anhydride groups (groups represented by -CO-O-CO-).

具有酸酐之酸酐基的數量為1個以上,2個以上為較佳,3個以上為更佳。作為上述數的上限,例如為1000以下。 酸酐的分子量(存在分子量分佈時為重量平均分子量)為100以上為較佳,2000以上為更佳,6000以上為進一步較佳。上述分子量的上限為100000以下為較佳,30000以下為更佳,17000以下為進一步較佳。 酸酐可以為低分子化合物亦可以為高分子化合物。 作為低分子化合物之酸酐,例如,可以舉出順丁烯二酸酐、鄰苯二甲酸酐、均苯四甲酸酐及偏苯三甲酸酐。 作為高分子化合物之酸酐中,酸酐基可以嵌入於主鏈而存在,亦可以存在於側鏈。另外,例如,在上述高分子化合物具有基於順丁烯二酸之重複單元之情況下,上述重複單元中所包含之酸酐基嵌入於主鏈中。 The number of acid anhydride groups having an acid anhydride is 1 or more, preferably 2 or more, more preferably 3 or more. As an upper limit of the said number, it is 1000 or less, for example. The molecular weight of the acid anhydride (weight average molecular weight when there is a molecular weight distribution) is preferably 100 or more, more preferably 2,000 or more, and still more preferably 6,000 or more. The upper limit of the molecular weight is preferably at most 100,000, more preferably at most 30,000, and still more preferably at most 17,000. The acid anhydride may be a low-molecular compound or a high-molecular compound. Examples of acid anhydrides of low molecular weight compounds include maleic anhydride, phthalic anhydride, pyromellitic anhydride, and trimellitic anhydride. In the acid anhydride which is a polymer compound, the acid anhydride group may exist embedded in the main chain, or may exist in the side chain. In addition, for example, when the above-mentioned polymer compound has a maleic acid-based repeating unit, the acid anhydride group contained in the above-mentioned repeating unit is embedded in the main chain.

酸酐基可以與酸酐基中所包含之原子以外的原子共同形成環,亦可以不形成環。其中,酸酐基形成環為較佳。上述環可以為單環亦可以為多環,環員原子數例如為5~15。 例如,酸酐具有由式(A)表示之基團為較佳。 The acid anhydride group may form a ring together with atoms other than the atoms included in the acid anhydride group, or may not form a ring. Among them, it is preferable that the acid anhydride group forms a ring. The aforementioned ring may be monocyclic or polycyclic, and the number of ring member atoms is, for example, 5-15. For example, it is preferable that the acid anhydride has a group represented by the formula (A).

[化學式24]

Figure 02_image063
[chemical formula 24]
Figure 02_image063

式(A)中,* S及* T表示與碳原子的鍵結位置。 其中,以* S鍵結之碳原子與以* T鍵結之碳原子為相互直接鍵結之相鄰之原子。 亦即,由式(A)表示之基團、以* S鍵結之碳原子與以* T鍵結之碳原子共同形成5員環。 又,以* S鍵結之碳原子與以* T鍵結之碳原子的鍵結的種類並無限制,例如,可以為單鍵(Single Bond),亦可以為雙鍵。又,可以為由式(A)表示之基團、以* S鍵結之碳原子與以* T鍵結之碳原子共同形成之5員環縮環成芳香環(苯環等),從而以* S鍵結之碳原子與以* T鍵結之碳原子成為在相同的芳香環中相鄰之環員原子。 上述芳香環可以為單環亦可以為多環,可以具有雜原子亦可以不具有雜原子,環員原子數例如為5~15。 In formula (A), * S and * T represent the bonding position with a carbon atom. Among them, the carbon atom bonded by * S and the carbon atom bonded by * T are adjacent atoms directly bonded to each other. That is, the group represented by the formula (A), the carbon atoms bonded by * S and the carbon atoms bonded by * T jointly form a 5-membered ring. Also, the type of bond between the carbon atom bonded by * S and the carbon atom bonded by * T is not limited, for example, it may be a single bond (Single Bond) or a double bond. Also, the group represented by the formula (A), the carbon atom bonded by * S and the carbon atom bonded by * T can be condensed into an aromatic ring (benzene ring, etc.) with a 5-membered ring, so that The carbon atom bonded by * S and the carbon atom bonded by * T become adjacent ring member atoms in the same aromatic ring. The above-mentioned aromatic ring may be monocyclic or polycyclic, may or may not have heteroatoms, and the number of ring members is, for example, 5-15.

酸酐具有選自包括由式(B)表示之基團、由式(C)表示之基團及由式(D)表示之基團之群組中之基團為較佳。The acid anhydride preferably has a group selected from the group consisting of the group represented by the formula (B), the group represented by the formula (C), and the group represented by the formula (D).

[化學式25]

Figure 02_image065
[chemical formula 25]
Figure 02_image065

式(B)中,R A1~R A4中的1個或2個表示鍵結位置,其他分別獨立地表示氫原子或取代基。 在R A1~R A4中的2個為鍵結位置之情況下,例如,可以為R A1及R A2成為鍵結位置,亦可以為R A1及R A2中的任一個和R A3及R A4中的任一個分別成為鍵結位置。 作為可以由R A1~R A4表示之取代基,例如,可以舉出選自上述的取代基群組Y之基團。又,上述取代基中的除了氫原子以外的原子的總數例如為1~20。 In the formula (B), one or two of R A1 to R A4 represent bonding positions, and the others each independently represent a hydrogen atom or a substituent. When two of R A1 to R A4 are binding positions, for example, R A1 and R A2 may be binding positions, or any one of R A1 and R A2 and R A3 and R A4 may be used. Any one of them becomes the bonding position respectively. Examples of substituents that may be represented by R A1 to R A4 include groups selected from the substituent group Y described above. Moreover, the total number of atoms other than a hydrogen atom in the said substituent is 1-20, for example.

式(C)中,R B1及R B2分別獨立地表示氫原子、取代基或鍵結位置。其中,R B1及R B2中的一個或兩個為鍵結位置。 作為可以由R B1及R B2表示之取代基,例如,可以舉出選自上述的取代基群組Y之基團。又,上述取代基中的除了氫原子以外的原子的總數例如為1~20。 In formula (C), R B1 and R B2 each independently represent a hydrogen atom, a substituent, or a bonding position. Wherein, one or both of R B1 and R B2 are bonding positions. Examples of substituents that may be represented by R B1 and R B2 include groups selected from the substituent group Y described above. Moreover, the total number of atoms other than a hydrogen atom in the said substituent is 1-20, for example.

式(D)中,*表示鍵結位置。上述鍵結位置可以為相對於氫原子之鍵結位置。 式(D)中,m表示1或2。 式(D)中,Ar表示可以具有取代基之芳香環。上述芳香環可以為單環亦可以為多環,可以具有雜原子亦可以不具有雜原子,環員原子數例如為5~15。其中,上述芳香環為苯環為較佳。 式(DN)中,n表示0以上的整數,0~2的整數為較佳,0或1為更佳。 式(D)中,存在(n+1)個具有由-CO-O-CO-表示之基團之5員環,(n+1)個5員環縮環成由Ar表示之芳香環。 例如,在n為0的情況下,由式(D)表示之基團為由下述式(D0)表示之基團,在n為1的情況下,由式(D)表示之基團為由下述式(D1)表示之基團。 下述式(D0)及下述式(D1)中的*、m及Ar的含義與式(D)中的*、m及Ar的含義相同。 In the formula (D), * represents a bonding position. The aforementioned bonding position may be a bonding position to a hydrogen atom. In formula (D), m represents 1 or 2. In formula (D), Ar represents an aromatic ring which may have a substituent. The above-mentioned aromatic ring may be monocyclic or polycyclic, may or may not have heteroatoms, and the number of ring members is, for example, 5-15. Among them, the above-mentioned aromatic ring is preferably a benzene ring. In the formula (DN), n represents an integer of 0 or more, preferably an integer of 0-2, and more preferably 0 or 1. In formula (D), there are (n+1) 5-membered rings having a group represented by -CO-O-CO-, and (n+1) 5-membered rings are condensed into an aromatic ring represented by Ar. For example, when n is 0, the group represented by the formula (D) is a group represented by the following formula (D0), and when n is 1, the group represented by the formula (D) is A group represented by the following formula (D1). The meanings of *, m, and Ar in the following formula (D0) and the following formula (D1) are the same as those of *, m, and Ar in the formula (D).

[化學式26]

Figure 02_image067
[chemical formula 26]
Figure 02_image067

具有酸酐之由式(A)表示之基團的數量為1個以上為較佳,2個以上為更佳。作為上述數的上限,例如為1000以下。 又,具有酸酐之、選自包括由式(B)表示之基團及由式(C)表示之基團之群組中之基團的數量為1個以上為較佳,2個以上為更佳,3個以上為進一步較佳。作為上述數的上限,例如為1000以下。 具有酸酐之、由式(D)表示之基團的數量為1個以上為較佳。作為上述數的上限,例如為1000以下。 The number of groups represented by the formula (A) having an acid anhydride is preferably 1 or more, more preferably 2 or more. As an upper limit of the said number, it is 1000 or less, for example. Also, the number of groups selected from the group including the group represented by the formula (B) and the group represented by the formula (C) having an acid anhydride is preferably 1 or more, more preferably 2 or more. Excellent, 3 or more are further preferred. As an upper limit of the said number, it is 1000 or less, for example. The number of groups represented by the formula (D) having an acid anhydride is preferably one or more. As an upper limit of the said number, it is 1000 or less, for example.

其中,酸酐為高分子化合物為較佳。 又,酸酐具有由下述式(X)表示之重複單元為較佳,具有由式(X)表示之重複單元及由式(Y)表示之重複單元為更佳。 Among them, it is preferable that the acid anhydride is a polymer compound. Also, the acid anhydride preferably has a repeating unit represented by the following formula (X), and more preferably has a repeating unit represented by the formula (X) and a repeating unit represented by the formula (Y).

[化學式27]

Figure 02_image069
[chemical formula 27]
Figure 02_image069

式(Y)中,R Y表示可以具有取代基之芳香環基。 作為上述芳香環基,可以為單環亦可以為多環,可以為芳香族烴環基亦可以為芳香族雜環基。作為上述芳香族雜環基中的雜原子,例如,可以舉出氧原子、硫原子及氮原子。 上述芳香環基的環員原子數為5~15為較佳。 作為上述芳香環基可以具有之取代基,例如,可以舉出選自上述的取代基群組Y之基團。又,上述取代基中的除了氫原子以外的原子的總數例如為1~20。 上述芳香環基可以具有之取代基的數量例如為0~5。 其中,R Y為未經取代之苯環基為較佳。 由式(Y)表示之重複單元可以單獨使用1種,亦可以使用2種以上。 In formula ( Y ), RY represents an aromatic ring group which may have a substituent. The aromatic ring group may be monocyclic or polycyclic, and may be an aromatic hydrocarbon ring group or an aromatic heterocyclic group. As a hetero atom in the said aromatic heterocyclic group, an oxygen atom, a sulfur atom, and a nitrogen atom are mentioned, for example. The above aromatic ring group preferably has 5 to 15 ring member atoms. As a substituent which the said aromatic ring group may have, the group selected from the said substituent group Y is mentioned, for example. Moreover, the total number of atoms other than a hydrogen atom in the said substituent is 1-20, for example. The number of substituents which the said aromatic ring group may have is 0-5, for example. Among them, RY is preferably an unsubstituted phenyl ring group. The repeating unit represented by formula (Y) may be used alone or in combination of two or more.

在酸酐具有由式(X)表示之重複單元之情況下,其他含量相對於酸酐的所有全重複單元為1~70質量%為較佳,5~60質量%為更佳,10~50質量%為進一步較佳。 在酸酐具有由式(Y)表示之重複單元之情況下,其他含量相對於酸酐的所有重複單元為10~90質量%為較佳。 When the acid anhydride has a repeating unit represented by formula (X), the other content is preferably 1 to 70% by mass, more preferably 5 to 60% by mass, and 10 to 50% by mass relative to all the repeating units of the acid anhydride for further improvement. When the acid anhydride has a repeating unit represented by the formula (Y), the other content is preferably 10 to 90 mass % with respect to all the repeating units of the acid anhydride.

酸酐可以具有由式(X)或式(Y)表示之重複單元以外的重複單元,例如,可以具有由下述式(Z)表示之重複單元。The acid anhydride may have a repeating unit other than the repeating unit represented by formula (X) or formula (Y), for example, may have a repeating unit represented by the following formula (Z).

[化學式28]

Figure 02_image071
[chemical formula 28]
Figure 02_image071

式(Z)中,R Z1~R Z4分別獨立地表示氫原子或取代基。R Z1~R Z4中,0~2個為上述取代基為較佳。 作為上述取代基,例如,可以舉出選自上述的取代基群組Y之基團。又,上述取代基中的除了氫原子以外的原子的總數例如為1~20。 其中,作為上述取代基,分別獨立地為-COOH、-O-CO-R或直鏈狀或者支鏈狀的烷基為較佳。-O-CO-R中的R表示有機基團,直鏈狀或支鏈狀的烷基為較佳,碳數1~4的直鏈狀或支鏈狀的烷基為更佳。 作為由式(Z)表示之重複單元,例如,可以舉出R Z1~R Z4均為氫原子之重複單元、R Z1及R Z3為氫原子且R Z2及R Z4為-COOH之重複單元及R Z1~R Z3為氫原子且R Z4為-O-CO-R之重複單元。 其中,由式(Z)表示之重複單元為與由式(Y)表示之重複單元不同的重複單元。具體而言,R Z1~R Z4中的3個為氫原子、1個為芳香環基之形態不包括在由式(Z)表示之重複單元中。 由式(Z)表示之重複單元可以單獨使用1種,亦可以使用2種以上。 在酸酐具有由式(Z)表示之重複單元之情況下,其他含量相對於酸酐的所有重複單元為1~70質量%為較佳,5~60質量%為更佳,10~50質量%為進一步較佳。 In formula (Z), R Z1 to R Z4 each independently represent a hydrogen atom or a substituent. Among R Z1 to R Z4 , 0 to 2 are preferably the above substituents. As said substituent, the group selected from the said substituent group Y is mentioned, for example. Moreover, the total number of atoms other than a hydrogen atom in the said substituent is 1-20, for example. Among them, as the above-mentioned substituents, each independently -COOH, -O-CO-R or linear or branched alkyl group is preferable. R in -O-CO-R represents an organic group, and a linear or branched alkyl group is preferred, and a linear or branched alkyl group having 1 to 4 carbon atoms is more preferred. As the repeating unit represented by the formula (Z), for example, repeating units in which R Z1 to R Z4 are hydrogen atoms, R Z1 and R Z3 are hydrogen atoms, R Z2 and R Z4 are -COOH repeating units, and R Z1 to R Z3 are hydrogen atoms and R Z4 is a repeating unit of -O-CO-R. However, the repeating unit represented by formula (Z) is a repeating unit different from the repeating unit represented by formula (Y). Specifically, the form in which three of R Z1 to R Z4 are hydrogen atoms and one is an aromatic ring group is not included in the repeating unit represented by formula (Z). The repeating unit represented by formula (Z) may be used alone or in combination of two or more. When the acid anhydride has a repeating unit represented by the formula (Z), the other content is preferably 1 to 70% by mass, more preferably 5 to 60% by mass, and 10 to 50% by mass relative to all the repeating units of the acid anhydride. Further better.

作為酸酐,可以使用市售品。作為市售品的酸酐,例如,可以舉出TOMOE ENGINEERING CO.,LTD.製造的SMA系列(Polyscope Polymers B.V.製造的XIRAN系列)、Arkema S.A.製造的OREVAC T系列及Arakawa Chemical Industries, Ltd.製造的ARASTAR系列。As the acid anhydride, a commercially available item can be used. Examples of commercially available acid anhydrides include SMA series manufactured by TOMOE ENGINEERING CO., LTD. (XIRAN series manufactured by Polyscope Polymers B.V.), OREVAC T series manufactured by Arkema S.A., and ARASTAR manufactured by Arakawa Chemical Industries, Ltd. series.

酸酐可以僅使用1種,亦可以使用2種以上。 酸酐的含量相對於組成物的總固體成分為0.01~40質量%為較佳,0.1~10質量%為更佳,0.6~5質量%為進一步較佳。 酸酐的含量相對於環氧化合物和酚化合物的合計含量為0.1~100質量%為較佳,1~70質量%為更佳,5~60質量%為進一步較佳。 Acid anhydride may use only 1 type, and may use 2 or more types. The content of the acid anhydride is preferably from 0.01 to 40% by mass, more preferably from 0.1 to 10% by mass, and still more preferably from 0.6 to 5% by mass, based on the total solid content of the composition. The content of the acid anhydride is preferably from 0.1 to 100% by mass, more preferably from 1 to 70% by mass, and still more preferably from 5 to 60% by mass, based on the total content of the epoxy compound and the phenol compound.

[順丁烯二醯亞胺化合物] 從導熱材料的耐熱性(玻璃轉移溫度Tg)優異之觀點考慮,本發明的組成物進一步含有順丁烯二醯亞胺化合物為較佳。 認為,在組成物含有順丁烯二醯亞胺化合物之情況下,順丁烯二醯亞胺化合物與酚化合物進行加成反應及/或由上述加成反應所產生之高分子結構相對於由組成物中的其他成分形成之高分子結構形成如互穿型網狀結構(interpenetrating polymer network),從而更提高導熱材料的高分子結構的密度,且更提高導熱材料的導熱性及耐熱性(Tg)。 又,由於在導熱材料中形成更緻密的高分子結構,因此水變得不易滲入導熱材料中而吸濕性亦得到抑制,並且導熱材料暴露於高溫之情況下,亦可以抑制構成成分熱分解而在導熱材料中生成揮發性低分子。其結果,認為即使在將導熱材料置於高溫下之情況下,亦可以抑制揮發性成分從導熱材料氣化而降低接著性,從而更提高導熱材料的焊錫耐熱性。 [Maleimide compound] From the viewpoint of excellent heat resistance (glass transition temperature Tg) of the heat conductive material, it is preferable that the composition of the present invention further contains a maleimide compound. It is considered that, when the composition contains a maleimide compound, the maleimide compound and the phenolic compound undergo an addition reaction and/or the polymer structure produced by the above addition reaction is compared with that produced by the The polymer structure formed by other components in the composition forms such as an interpenetrating polymer network, thereby increasing the density of the polymer structure of the thermally conductive material, and further improving the thermal conductivity and heat resistance of the thermally conductive material (Tg ). In addition, since a denser polymer structure is formed in the heat-conducting material, water becomes less likely to penetrate into the heat-conducting material and the hygroscopicity is also suppressed, and when the heat-conducting material is exposed to high temperature, thermal decomposition of constituent components can also be suppressed. Generates volatile low molecules in thermally conductive materials. As a result, it is considered that even when the heat conduction material is exposed to high temperature, it is possible to suppress the vaporization of volatile components from the heat conduction material to reduce the adhesiveness, thereby further improving the solder heat resistance of the heat conduction material.

順丁烯二醯亞胺化合物係指具有1個以上的順丁烯二醯亞胺基之順丁烯二醯亞胺化合物。 其中,作為順丁烯二醯亞胺化合物,具有1個或2個順丁烯二醯亞胺基之順丁烯二醯亞胺化合物為較佳,具有2個順丁烯二醯亞胺基之順丁烯二醯亞胺化合物(雙順丁烯二醯亞胺化合物)為更佳。 The maleimide compound refers to a maleimide compound having one or more maleimide groups. Among them, as the maleimide compound, a maleimide compound having 1 or 2 maleimide groups is preferable, and a maleimide compound having 2 maleimide groups is preferable. The maleimide compound (bismaleimide compound) is more preferable.

順丁烯二醯亞胺化合物所具有之順丁烯二醯亞胺基的數量為1個以上,1~100個為較佳,2~10個為更佳,2個為進一步較佳。 順丁烯二醯亞胺化合物可以為高分子化合物及低分子化合物中的任一種。 順丁烯二醯亞胺化合物的分子量為100~3000為較佳,200~2000為更佳,300~1000為進一步較佳。 The number of the maleimide groups which the maleimide compound has is 1 or more, Preferably it is 1-100, More preferably, it is 2-10, More preferably, it is 2. The maleimide compound may be either a high-molecular compound or a low-molecular compound. The molecular weight of the maleimide compound is preferably from 100 to 3,000, more preferably from 200 to 2,000, and still more preferably from 300 to 1,000.

作為順丁烯二醯亞胺化合物所具有之順丁烯二醯亞胺基,由式(M)表示之基團為較佳。As the maleimide group which the maleimide compound has, a group represented by the formula (M) is preferable.

[化學式29]

Figure 02_image073
[chemical formula 29]
Figure 02_image073

式(M)中,*表示鍵結位置。X及Y分別獨立地表示氫原子或取代基。In the formula (M), * represents a bonding position. X and Y each independently represent a hydrogen atom or a substituent.

X及Y分別獨立地表示氫原子或取代基。 作為上述取代基,例如,可以舉出在上面敘述之取代基群組Y中例示之基團。 作為X及Y氫原子為較佳。 X and Y each independently represent a hydrogen atom or a substituent. Examples of the above-mentioned substituent include groups exemplified in the substituent group Y described above. Hydrogen atoms are preferred as X and Y.

順丁烯二醯亞胺化合物為具有1個以上(較佳為1~10個)的芳香環基(苯環基等)之化合物亦較佳。 順丁烯二醯亞胺化合物為由下述式(1)表示之化合物為較佳。 It is also preferable that the maleimide compound is a compound having one or more (preferably 1 to 10) aromatic ring groups (phenyl ring groups, etc.). The maleimide compound is preferably a compound represented by the following formula (1).

[化學式30]

Figure 02_image075
[chemical formula 30]
Figure 02_image075

式(1)中,m表示0或1。作為m,1為較佳。 n表示0或1。作為n,1為較佳。 In formula (1), m represents 0 or 1. As m, 1 is preferable. n represents 0 or 1. As n, 1 is preferable.

式(1)中,R 1及R 2分別獨立地表示氫原子或取代基。 作為上述取代基,烷基為較佳。上述烷基可以為直鏈狀,亦可以為支鏈狀,作為上述烷基的碳數1~10為較佳。 在R 1及/或R 2表示取代基之情況下,R 1及/或R 2在苯環基上存在於與順丁烯二醯亞胺基相鄰之位置亦較佳。 在R 1及R 2兩個均表示取代基之情況下,R 1及R 2為分別不同的取代基為較佳、R 1表示甲基、R 2表示乙基為更佳。 In formula (1), R 1 and R 2 each independently represent a hydrogen atom or a substituent. As the above-mentioned substituent, an alkyl group is preferable. The above-mentioned alkyl group may be linear or branched, and the number of carbon atoms in the above-mentioned alkyl group is preferably 1 to 10. In the case where R 1 and/or R 2 represent a substituent, it is also preferred that R 1 and/or R 2 exist at a position adjacent to the maleimide group on the phenyl ring group. When both R 1 and R 2 represent substituents, R 1 and R 2 are preferably different substituents, R 1 represents methyl, and R 2 represents ethyl.

式(1)中,L 1表示二價連結基。 作為上述二價連結基,例如,可以舉出醚基(-O-)、羰基(-CO-)、酯基(-COO-)、硫醚基(-S-)、-SO 2-、-NR-(R為氫原子或烷基)、二價脂肪族烴基(例如,伸烷基、伸環烷基、伸烯基(-CH=CH-等)及伸炔基(-C≡C-等))、二價芳香環基(伸芳基及雜伸芳基)以及將該等組合而成之基團。 式(1)中,由L 1表示之二價連結基的碳數為1以上為較佳,1~100為更佳,3~15為進一步較佳。 In formula (1), L 1 represents a divalent linking group. Examples of the divalent linking group include ether group (-O-), carbonyl group (-CO-), ester group (-COO-), thioether group (-S-), -SO 2 -, - NR- (R is a hydrogen atom or an alkyl group), divalent aliphatic hydrocarbon groups (for example, alkylene, cycloalkylene, alkenylene (-CH=CH-, etc.) and alkynylene (-C≡C- etc.)), divalent aromatic ring groups (arylylene and heteroarylylene) and groups formed by combining them. In formula (1), the carbon number of the divalent linking group represented by L 1 is preferably 1 or more, more preferably 1-100, and still more preferably 3-15.

其中,L 1為由“* p-(L 2-Ar) k-* q”表示之基團為較佳。 * q表示與順丁烯二醯亞胺基直接鍵結之側的鍵結位置,* p表示相反側的鍵結位置。 k表示1以上的整數,1~10為較佳,1為更佳。 L 2表示單鍵、-C(R 3)(R 4)-、-O-或-CO-,-C(R 3)(R 4)-為較佳。 R 3及R 4分別獨立地表示氫原子或取代基,烷基(可以為直鏈狀,亦可以為支鏈狀,碳數為1~10)為較佳。 Ar表示伸芳基。上述伸芳基的環員原子的數量為6~15個為較佳,6個為更佳。上述伸芳基具有取代基之情況下,取代基的數量為1~4個為較佳,1~2個為更佳。作為上述伸芳基可以具有之取代基,烷基(可以為直鏈狀,亦可以為支鏈狀,碳數為1~10)為較佳。作為Ar能夠採用之結構,例如,亦可以舉出式(1)中所明示之與R 1及R 2鍵結之苯環基可形成之結構。 在L 2及Ar存在複數個之情況下,存在複數個之L 2彼此及存在複數個之Ar彼此可以分別相同亦可以不同。 Among them, L 1 is preferably a group represented by "* p -(L 2 -Ar) k -* q ". * q represents the bonding position on the side directly bonded to the maleimide group, and * p represents the bonding position on the opposite side. k represents an integer of 1 or more, preferably 1 to 10, more preferably 1. L 2 represents a single bond, -C(R 3 )(R 4 )-, -O- or -CO-, preferably -C(R 3 )(R 4 )-. R 3 and R 4 each independently represent a hydrogen atom or a substituent, preferably an alkyl group (which may be linear or branched, having 1 to 10 carbon atoms). Ar represents an aryl group. The number of ring member atoms of the arylylene group is preferably 6 to 15, more preferably 6. When the above-mentioned aryl group has a substituent, the number of substituents is preferably 1 to 4, more preferably 1 to 2. As a substituent which the above-mentioned arylylene group may have, an alkyl group (which may be linear or branched and has 1 to 10 carbon atoms) is preferable. As the structure that Ar can adopt, for example, a structure that can be formed by the phenyl ring group bonded to R 1 and R 2 shown in formula (1) can also be mentioned. When there are plural L 2 and Ar, the plural L 2 and the plural Ar may be the same as or different from each other.

在n為1之情況下,在與R 1及R 2鍵結之苯環基上,順丁烯二醯亞胺基和由“-(L 1m-順丁烯二醯亞胺基”表示之基團這2個基團可以相互配置於鄰位,亦可以配置於間位,亦可以配置於對位。其中,上述2個基團配置於間位或對位為較佳。 When n is 1, on the phenyl ring group bonded to R 1 and R 2 , the maleimide group and the "-(L 1 ) m -maleimide group" The two groups represented by the group may be arranged in the ortho position, the meta position, or the para position. Among them, it is preferred that the above two groups are arranged at the meta-position or the para-position.

其中,關於由式(1)表示之化合物,m表示1、n表示1且由L 1表示之二價連結基的碳數為3~15為較佳。 Among them, regarding the compound represented by formula (1), m represents 1, n represents 1, and the carbon number of the divalent linking group represented by L 1 is preferably 3-15.

順丁烯二醯亞胺化合物可以儘使用1種,亦可以使用2種以上。 順丁烯二醯亞胺化合物的含量相對於組成物的總固體成分為0.1~40質量%為較佳,1~15質量%為更佳,3.5~8質量%為進一步較佳。 順丁烯二醯亞胺化合物的含量相對於環氧化合物和酚化合物的合計含量為1~200質量%為較佳,5~100質量%為較佳,10~70質量%為更佳,20~60質量%為進一步較佳。 順丁烯二醯亞胺化合物的含量相對於酚化合物的含量,例如為1~500質量%為較佳,20~300質量%為更佳,50~200質量%為進一步較佳,70~130質量%為特佳。 As for the maleimide compound, only one type may be used, or two or more types may be used. The content of the maleimide compound is preferably from 0.1 to 40% by mass, more preferably from 1 to 15% by mass, and still more preferably from 3.5 to 8% by mass, based on the total solid content of the composition. The content of the maleimide compound is preferably from 1 to 200% by mass, more preferably from 5 to 100% by mass, more preferably from 10 to 70% by mass, with respect to the total content of the epoxy compound and the phenolic compound, and 20% by mass. -60 mass % is still more preferable. The content of the maleimide compound relative to the content of the phenolic compound is, for example, preferably 1 to 500% by mass, more preferably 20 to 300% by mass, further preferably 50 to 200% by mass, and 70 to 130% by mass. Quality % is especially good.

〔硬化促進劑〕 組成物進一步含有硬化促進劑為較佳。 作為硬化促進劑,例如,可以舉出三鄰甲苯基膦、三苯基膦、三氟化硼胺錯合物、日本特開2012-067225號公報的[0052]段中所記載之化合物、四苯基鏻四苯基硼酸鹽(Tetraphenylphosphonium tetraphenylborate)(TPP-K)、四苯基鏻四對甲苯基硼酸鹽(Tetraphenylphosphonium Tetra-p-tolylborate)(TPP-MK)、四正丁基月桂酸鏻(Tetra-n-butylphosphonium laurate)(TBP-LA)、雙(四正丁基鏻)均苯四甲酸酯及四苯基鏻的雙(萘-2,3-二氧基)苯基矽酸鹽加成物等四級鏻系化合物(鏻鹽)等鎓鹽系硬化促進劑。 又,作為硬化促進劑,例如,可以舉出2-甲基咪唑(產品名稱;2MZ)、2-十一基咪唑(產品名稱;C11-Z)、2-十七烷基咪唑(產品名稱;C17Z)、1,2-二甲基咪唑(產品名稱;1.2DMZ)、2-乙基-4-甲基咪唑(產品名稱;2E4MZ)、2-苯基咪唑(產品名稱;2PZ)、2-苯基-4-甲基咪唑(產品名稱;2P4MZ)、1-芐基-2-甲基咪唑(產品名稱;1B2MZ)、1-芐基-2-苯基咪唑(產品名稱;1B2PZ)、1-氰乙基-2-甲基咪唑(產品名稱;2MZ-CN)、1-氰乙基-2-十一基咪唑(產品名稱;C11Z-CN)、1-氰乙基-2-苯咪唑三聚體(產品名稱;2PZCNS-PW)、2,4-二胺基-6-[2’-甲基咪唑基-(1’)]-乙基-均三𠯤(產品名稱;2MZ-A)、2,4-二胺基-6-[2’-十一基咪唑基-(1’)]-乙基-均三𠯤(產品名稱;C11Z-A)、2,4-二胺基-6-[2’-乙基-4’-甲基咪唑基-(1’)]-乙基-均三𠯤(產品名稱;2E4MZ-A)、2,4-二胺基-6-[2’-甲基咪唑基-(1’)]-乙基-均三𠯤異三聚氰酸加成物(產品名稱;2MA-OK)、2-苯基-4,5-二羥基甲基咪唑(產品名稱;2PHZ-PW)、2-苯基-4-甲基-5-羥基甲基咪唑(產品名稱;2P4MHZ-PW)、1-氰乙基-2-苯基咪唑(產品名稱;2PZ-CN)、2,4-二胺基-6-[2’-甲基咪唑基-(1’)]-乙基-均三𠯤(產品名稱;2MZA-PW)及2,4-二胺基-6-[2’-甲基咪唑基-(1’)]-乙基-均三𠯤異三聚氰酸加成物(產品名稱;2MAOK-PW)等咪唑系硬化促進劑(均為SHIKOKU CHEMICALS CORPORATION製造)。此外,作為三芳基膦系的硬化促進劑,例如,亦可以舉出日本特開2004-043405號公報的[0052]段中所記載之化合物。作為對三芳基膦加成三苯基硼烷而得之磷系硬化促進劑,例如,亦可以舉出日本特開2014-005382號公報的[0024]段中所記載之化合物。 〔Hardening Accelerator〕 It is preferable that the composition further contains a curing accelerator. Examples of the hardening accelerator include tri-o-tolylphosphine, triphenylphosphine, boron trifluoride amine complexes, compounds described in paragraph [0052] of JP-A-2012-067225, four Tetraphenylphosphonium tetraphenylborate (TPP-K), tetraphenylphosphonium tetra-p-tolylborate (TPP-MK), tetra-n-butylphosphonium laurate ( Tetra-n-butylphosphonium laurate) (TBP-LA), bis(tetra-n-butylphosphonium) pyromellitic acid ester and bis(naphthalene-2,3-dioxy)phenylsilicate of tetraphenylphosphonium Onium salt-based hardening accelerators such as quaternary phosphonium-based compounds (phosphonium salts) such as adducts. Also, as the hardening accelerator, for example, 2-methylimidazole (product name; 2MZ), 2-undecylimidazole (product name; C11-Z), 2-heptadecylimidazole (product name; C17Z), 1,2-dimethylimidazole (product name; 1.2DMZ), 2-ethyl-4-methylimidazole (product name; 2E4MZ), 2-phenylimidazole (product name; 2PZ), 2- Phenyl-4-methylimidazole (product name; 2P4MZ), 1-Benzyl-2-methylimidazole (product name; 1B2MZ), 1-Benzyl-2-phenylimidazole (product name; 1B2PZ), 1 -Cyanoethyl-2-methylimidazole (product name; 2MZ-CN), 1-cyanoethyl-2-undecylimidazole (product name; C11Z-CN), 1-cyanoethyl-2-benzimidazole Trimer (product name; 2PZCNS-PW), 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-same trisylamine (product name; 2MZ-A ), 2,4-diamino-6-[2'-undecylimidazolyl-(1')]-ethyl-sesame (product name; C11Z-A), 2,4-diamino -6-[2'-Ethyl-4'-methylimidazolyl-(1')]-ethyl-sestrimethanone (product name; 2E4MZ-A), 2,4-diamino-6-[ 2'-Methylimidazolyl-(1')]-Ethyl-Mes-3-Isocyanuric Acid Adduct (Product Name; 2MA-OK), 2-Phenyl-4,5-Dihydroxymethyl Imidazole (product name; 2PHZ-PW), 2-phenyl-4-methyl-5-hydroxymethylimidazole (product name; 2P4MHZ-PW), 1-cyanoethyl-2-phenylimidazole (product name; 2PZ-CN), 2,4-Diamino-6-[2'-methylimidazolyl-(1')]-Ethyl-Mestrisulfone (product name; 2MZA-PW) and 2,4-Diamino Amino-6-[2'-methylimidazolyl-(1')]-ethyl-isocyanuric acid adduct (product name; 2MAOK-PW) and other imidazole-based hardening accelerators (homogeneous Manufactured for SHIKOKU CHEMICALS CORPORATION). In addition, examples of the triarylphosphine-based curing accelerator include compounds described in paragraph [0052] of JP-A-2004-043405. Examples of the phosphorus-based hardening accelerator obtained by adding triphenylborane to triarylphosphine include compounds described in paragraph [0024] of JP-A-2014-005382.

其中,硬化促進劑含有具有磷原子之化合物或鏻鹽為較佳,含有具有磷原子之化合物為更佳。 硬化促進劑可以為包含磷原子之化合物或鏻鹽其本身。在作為硬化促進劑使用鏻鹽之情況下,由組成物形成之半硬化膜的保存穩定性優異。 Among them, the curing accelerator preferably contains a compound having a phosphorus atom or a phosphonium salt, and more preferably contains a compound having a phosphorus atom. The hardening accelerator may be a compound containing a phosphorus atom or a phosphonium salt itself. When using a phosphonium salt as a hardening accelerator, the storage stability of the semi-cured film formed from a composition is excellent.

硬化促進劑可以單獨使用1種,亦可以使用2種以上。 硬化促進劑的含量相對於組成物的總固體成分為0.002質量%以上為較佳,0.02質量%以上為更佳,0.07質量%以上為進一步較佳。上限相對於組成物的總固體成分為5質量%以下為較佳,2質量%以下為更佳,1質量%以下為進一步較佳。 硬化促進劑的含量相對於所有環氧化合物為0.01質量%以上為較佳,0.10質量%以上為更佳,0.55質量%以上為進一步較佳。上限相對於所有環氧化合物,40質量%以下為較佳,12質量%以下為更佳,10質量%以下為進一步較佳,5質量%以下為特佳。 具有磷原子之化合物或鏻鹽的含量相對於硬化促進劑的總質量為10~100質量%為較佳,50~100質量%為更佳,80~100質量%為進一步較佳。 A hardening accelerator may be used individually by 1 type, and may use 2 or more types. The content of the hardening accelerator is preferably at least 0.002% by mass, more preferably at least 0.02% by mass, and still more preferably at least 0.07% by mass, based on the total solid content of the composition. The upper limit is preferably 5% by mass or less, more preferably 2% by mass or less, and still more preferably 1% by mass or less with respect to the total solid content of the composition. The content of the hardening accelerator is preferably at least 0.01% by mass, more preferably at least 0.10% by mass, and still more preferably at least 0.55% by mass, based on all the epoxy compounds. The upper limit is preferably at most 40% by mass, more preferably at most 12% by mass, further preferably at most 10% by mass, and particularly preferably at most 5% by mass, based on all epoxy compounds. The content of the compound having a phosphorus atom or the phosphonium salt is preferably from 10 to 100% by mass, more preferably from 50 to 100% by mass, and still more preferably from 80 to 100% by mass, based on the total mass of the hardening accelerator.

〔離子捕捉劑〕 從導熱材料的絕緣性優異之觀點考慮,本發明的組成物進一步含有離子捕捉劑為較佳。 離子捕捉劑在組成物中或使用組成物而形成之導熱材料中吸附離子性的雜質。 作為離子捕捉劑,例如,可以舉出無機系離子捕捉劑及有機系離子捕捉劑。 另外,上述的特定無機物及其他無機物的全部或一部分可以兼具作為離子捕捉劑之作用。 〔Ion Scavenger〕 It is preferable that the composition of the present invention further contains an ion-scavenging agent from the viewpoint of excellent insulating properties of the heat-conducting material. The ion scavenger adsorbs ionic impurities in the composition or in the thermally conductive material formed using the composition. As an ion trapping agent, an inorganic type ion trapping agent and an organic type ion trapping agent are mentioned, for example. In addition, all or a part of the above-mentioned specific inorganic substances and other inorganic substances may also function as an ion-scavenging agent.

作為無機系離子捕捉劑,例如,可以舉出藉由離子交換而捕捉陽離子之陽離子吸附劑、藉由離子交換而捕捉陰離子之陰離子吸附劑及藉由離子交換而捕捉陽離子及陰離子這兩者之雙離子捕捉劑等無機離子吸附劑。Examples of inorganic ion capture agents include cation adsorbents that capture cations by ion exchange, anion adsorbents that capture anions by ion exchange, and dual combinations that capture both cations and anions by ion exchange. Inorganic ion adsorbents such as ion traps.

作為無機系離子捕捉劑,例如,可以舉出包含選自包括銻、鉍、鋯、鈦、錫及鎂之群組中之1種以上(較佳為2種以上)之無機物(較佳為複合無機物)。作為包含上述1種以上(較佳為2種以上)之無機物(較佳為複合無機物),例如,可以舉出氧化物(較佳為複合氧化物)、氧化水合物(較佳為複合氧化水合物)及氫氧化物(較佳為複合氫氧化物)。 又,作為無機系離子捕捉劑,例如,亦可以舉出選自包括銻、鉍、鋯、鈦、錫及鎂之群組中之1種以上與鋁的複合無機物(複合氧化物、複合氧化水合物及複合氫氧化物等)。 作為複合氧化物,例如,可以舉出氧化鋁/氧化鎂固溶體。 As an inorganic ion-scavenging agent, for example, an inorganic substance (preferably a composite) containing one or more (preferably two or more) selected from the group consisting of antimony, bismuth, zirconium, titanium, tin, and magnesium can be mentioned. Inorganic matter). Examples of inorganic substances (preferably composite inorganic substances) containing one or more (preferably two or more) of the above include oxides (preferably composite oxides), oxidized hydrates (preferably composite oxidized hydrated substances) and hydroxides (preferably composite hydroxides). Also, as the inorganic ion-scavenging agent, for example, composite inorganic substances (composite oxides, composite oxide hydrates) and aluminum of one or more selected from the group consisting of antimony, bismuth, zirconium, titanium, tin, and magnesium can also be mentioned. substances and composite hydroxides, etc.). As a composite oxide, for example, an alumina/magnesia solid solution is mentioned.

作為複合物之無機系離子捕捉劑為選自包括銻、鉍、鋯、鎂及鋁之群組中之2種以上的、氧化物(複合氧化物)、氧化水合物(複合氧化水合物)或氫氧化物(複合氫氧化物)為較佳。 其中,作為無機系離子捕捉劑為鎂、鋁及鋯3成分系複合物(複合氧化物、複合氧化水合物及複合氫氧化物等)、鉍及鋯2成分系複合物(複合氧化物、複合氧化水合物及複合氫氧化物等)、鉍及銻2成分系複合物(複合氧化物、複合氧化水合物及複合氫氧化物等)或包含鎂及鋁之複合物(複合氧化物、複合氧化水合物及複合氫氧化物等)為較佳,鉍及鋯2成分系複合物或鎂及鋁2成分系複合物為更佳。 The inorganic ion scavenger as a composite is two or more selected from the group consisting of antimony, bismuth, zirconium, magnesium and aluminum, an oxide (composite oxide), an oxide hydrate (composite oxide hydrate) or Hydroxide (composite hydroxide) is preferred. Among them, the inorganic ion-scavenging agent is a three-component composite of magnesium, aluminum, and zirconium (composite oxide, composite oxide hydrate, composite hydroxide, etc.), a two-component composite of bismuth and zirconium (composite oxide, composite oxide hydrate, composite hydroxide, etc.), bismuth and antimony two-component composites (composite oxides, composite oxide hydrates, composite hydroxides, etc.), or composites containing magnesium and aluminum (composite oxides, composite oxides Hydrate and composite hydroxide, etc.) are preferable, bismuth and zirconium two-component composites or magnesium and aluminum two-component composites are more preferable.

在無機系離子捕捉劑含有2種以上的金屬原子之情況下,無機系離子捕捉劑的含量相對於無機系離子捕捉劑的所有金屬原子,含有2種以上(例如,2~4種)成為1~99莫耳%之金屬原子為較佳、含有2種以上(例如,2~4種)成為5~95莫耳%之金屬原子為更佳。 無機系離子捕捉劑的含量相對於所有無機物為0.01~40質量%為較佳,0.1~20質量%為更佳,0.2~10質量%為進一步較佳。 When the inorganic ion scavenger contains two or more metal atoms, the content of the inorganic ion scavenger contains two or more (for example, 2 to 4 types) to 1 with respect to all the metal atoms in the inorganic ion scavenger. It is preferably ∼99 mole % of metal atoms, and it is more preferable to contain 2 or more types (for example, 2 to 4 types) so as to be 5 to 95 mole % of metal atoms. The content of the inorganic ion-scavenging agent is preferably 0.01 to 40% by mass, more preferably 0.1 to 20% by mass, and still more preferably 0.2 to 10% by mass, based on all the inorganic substances.

作為有機系離子捕捉劑,例如,可以舉出三𠯤硫醇化合物、三𠯤胺化合物、苯并咪唑化合物、苯并三唑化合物、胺基三唑化合物及雙酚系還原劑。Examples of the organic ion-scavenging agent include tristhiol compounds, trisanthamine compounds, benzimidazole compounds, benzotriazole compounds, aminotriazole compounds, and bisphenol-based reducing agents.

作為三𠯤硫醇化合物,例如,可以舉出2-二丁基胺基-4,6-二巰基-均三𠯤。 作為苯并咪唑化合物,例如,可以舉出苯并咪唑。 作為苯并三唑化合物,例如,可以舉出1H-苯并三唑、羧基苯并三唑、2-(2’-羥基-5’-三級辛基苯基)苯并三唑、2-(2’-羥基-5’-甲基苯基)苯并三唑及2,2’-亞甲基雙[6-(2H-苯并三唑-2-基)-4-三級辛基苯酚]。 作為胺基三唑化合物,例如,可以舉出3-胺基-1,2,4-三唑及3,5-二胺基-1,2,4-三唑。 作為雙酚系還原劑,例如,可以舉出2,2’-亞甲基雙-(4-乙基-6-三級丁基苯酚)及4,4’-亞丁基雙-(6-三級丁基-3-甲基苯酚)。 Examples of the tristhiol compound include 2-dibutylamino-4,6-dimercapto-siotrithiol. Examples of the benzimidazole compound include benzimidazole. Examples of benzotriazole compounds include 1H-benzotriazole, carboxybenzotriazole, 2-(2'-hydroxy-5'-tertiary octylphenyl)benzotriazole, 2- (2'-Hydroxy-5'-methylphenyl)benzotriazole and 2,2'-methylenebis[6-(2H-benzotriazol-2-yl)-4-tertiary octyl phenol]. Examples of the aminotriazole compound include 3-amino-1,2,4-triazole and 3,5-diamino-1,2,4-triazole. Examples of bisphenol-based reducing agents include 2,2'-methylenebis-(4-ethyl-6-tert-butylphenol) and 4,4'-butylenebis-(6-tri-butylphenol) grade butyl-3-methylphenol).

離子捕捉劑可以使用市售品離子捕捉劑。 作為市售品離子捕捉劑,例如,可以舉出DHF-4A、DHT-4A、DHT-4A-2、DHT-4C、Kyoward500、KW-2000及KW-2100(產品名稱、Kyowa Chemical Industry Co. Ltd.製造);IXE-100、IXE-500、IXE-600、IXE-700F、IXE-800、IXE-6107、IXEPLAS-A1、IXEPLAS-A2及IXEPLAS-B1(產品名稱、TOAGOSEI CO.,LTD.製造);Gisnet DB(產品名稱、Sankyo Pharmaceutical Co.,Ltd.製造);VD-3及VD-5(產品名稱、SHIKOKU CHEMICALS CORPORATION製造);以及Yoshinox BB(產品名稱、YOSHITOMI PHARMACEUTICAL INDUSTRIES, LTD.製造)。 As the ion trapping agent, a commercially available ion trapping agent can be used. Examples of commercially available ion traps include DHF-4A, DHT-4A, DHT-4A-2, DHT-4C, Kyoward500, KW-2000, and KW-2100 (product name, Kyowa Chemical Industry Co. Ltd. .manufactured); IXE-100, IXE-500, IXE-600, IXE-700F, IXE-800, IXE-6107, IXEPLAS-A1, IXEPLAS-A2 and IXEPLAS-B1 (product name, manufactured by TOAGOSEI CO.,LTD. ); Gisnet DB (product name, manufactured by Sankyo Pharmaceutical Co., Ltd.); VD-3 and VD-5 (product name, manufactured by SHIKOKU CHEMICALS CORPORATION); and Yoshinox BB (product name, manufactured by YOSHITOMI PHARMACEUTICAL INDUSTRIES, LTD.) .

離子捕捉劑可以單獨使用1種,亦可以使用2種以上。 在組成物含有離子捕捉劑之情況下,離子捕捉劑(無機系離子捕捉劑及/或有機系離子捕捉劑)的含量相對於組成物的總固體成分為0.01~10質量%為較佳,0.1~20質量%為更佳,0.2~10質量%為進一步較佳。 另外,在離子捕捉劑包含無機系離子捕捉劑之情況下,離子捕捉劑的一部分或全部可以同時屬於在上面敘述之特定無機物或其他無機物。 Ion trapping agents may be used alone or in combination of two or more. When the composition contains an ion scavenger, the content of the ion scavenger (inorganic ion scavenger and/or organic ion scavenger) is preferably 0.01 to 10% by mass relative to the total solid content of the composition, and 0.1 -20 mass % is more preferable, and 0.2-10 mass % is still more preferable. In addition, when the ion scavenger includes an inorganic ion scavenger, a part or all of the ion scavenger may belong to the above-mentioned specific inorganic substance or other inorganic substances at the same time.

〔溶劑〕 組成物可以含有溶劑。 作為溶劑,有機溶劑為較佳。作為有機溶劑,例如,可以舉出環戊酮、環己酮、乙酸乙酯、甲基乙基酮、二氯甲烷及四氫呋喃。 在組成物含有溶劑之情況下,溶劑的含量為將組成物的固體成分濃度設為20~90質量%之量為較佳,設為30~85質量%之量為更佳,設為50~80質量%之量為進一步較佳。 溶劑的含量相對於組成物的總質量為10~80質量%為較佳,15~70質量%為更佳,20~50質量%為進一步較佳。 〔Solvent〕 The composition may contain a solvent. As a solvent, an organic solvent is preferable. Examples of organic solvents include cyclopentanone, cyclohexanone, ethyl acetate, methyl ethyl ketone, methylene chloride and tetrahydrofuran. When the composition contains a solvent, the content of the solvent is such that the solid content concentration of the composition is preferably 20 to 90% by mass, more preferably 30 to 85% by mass, and 50 to 50% by mass. The amount of 80% by mass is further more preferable. The content of the solvent is preferably from 10 to 80% by mass, more preferably from 15 to 70% by mass, and still more preferably from 20 to 50% by mass, based on the total mass of the composition.

〔組成物的製造方法〕 組成物的製造方法並無特別限制,能夠採用公知的方法,例如,能夠藉由混合在上面敘述之各種成分來製造。在進行混合時,可以一次性混合各種成分,亦可以依次混合各種成分。 混合成分之方法並無特別限制,能夠使用公知的方法。用於混合之混合裝置為液中分散機為較佳,例如,可以舉出自轉公轉混合機、高速旋轉剪切型攪拌機等攪拌機、膠磨機、輥磨機、高壓噴射式分散機、超聲波分散機、珠磨機及均質機。混合裝置可以單獨使用1種,亦可以使用2種以上。可以在進行混合的前後及/或同時進行脫氣處理。 〔Manufacturing method of the composition〕 The method for producing the composition is not particularly limited, and a known method can be used, for example, it can be produced by mixing the above-mentioned various components. When mixing, various components may be mixed at once, or may be mixed sequentially. The method of mixing the components is not particularly limited, and known methods can be used. The mixing device used for mixing is preferably a liquid disperser, for example, mixers such as self-rotating mixers, high-speed rotary shear mixers, rubber mills, roller mills, high-pressure jet dispersers, ultrasonic dispersers, etc. machine, bead mill and homogenizer. One type of mixing device may be used alone, or two or more types may be used. The degassing treatment may be performed before and after mixing and/or simultaneously.

〔組成物的硬化方法〕 本發明的組成物為導熱材料形成用組成物為較佳。 能夠藉由對本發明的組成物進行硬化處理而獲得導熱材料。 組成物的硬化方法並無特別限制,熱硬化反應為較佳。 熱硬化反應時的加熱溫度並無特別限制。例如,只要在50~250℃的範圍內適當選擇即可。又,在進行熱硬化反應時,可以經過複數次溫度不同的加熱處理來實施。 硬化處理對製成為薄膜狀或片狀之組成物進行為較佳。具體而言,例如,只要將組成物塗佈成膜並進行硬化反應即可。 進行硬化處理時,藉由在基材上塗佈組成物而形成塗膜之後使其硬化為較佳。此時,亦可以使不同的基材與形成於基材上之塗膜進一步接觸之後進行硬化處理。硬化後所獲得之硬化物(導熱材料)可以與基材的一者或兩者分離,亦可以不分離。 又,在進行硬化處理時,亦可以在各個基材上塗佈組成物而分別形成塗膜並在使所獲得之塗膜彼此接觸之狀態下進行硬化處理。硬化後所獲得之硬化物(導熱材料)可以與基材的一者或兩者分離,亦可以不分離。 〔How to harden the composition〕 The composition of the present invention is preferably a composition for forming a thermally conductive material. A thermally conductive material can be obtained by hardening the composition of the present invention. The curing method of the composition is not particularly limited, and thermal curing reaction is preferred. The heating temperature during the thermosetting reaction is not particularly limited. For example, what is necessary is just to select suitably within the range of 50-250 degreeC. In addition, when the thermosetting reaction is performed, it may be performed through plural times of heat treatment at different temperatures. Hardening treatment is preferably performed on a film-like or sheet-like composition. Specifically, for example, what is necessary is just to apply a composition to form a film, and to perform hardening reaction. When hardening is performed, it is preferable to harden after forming a coating film by coating a composition on a base material. At this time, the curing treatment may be performed after bringing a different base material into contact with the coating film formed on the base material. The cured product (thermally conductive material) obtained after curing may be separated from one or both of the base materials, or may not be separated. In addition, when the hardening treatment is performed, the composition may be applied to each substrate to form coating films, and the hardening treatment may be performed in a state where the obtained coating films are in contact with each other. The cured product (thermally conductive material) obtained after curing may be separated from one or both of the base materials, or may not be separated.

硬化處理可以在組成物成為半硬化狀態之時點結束。又,亦可以使組成物成為半硬化狀態之後,進一步實施硬化處理而完成硬化。 亦可以將用於使組成物成為半硬化狀態之硬化處理(以下,亦稱為“半硬化處理”。)和用於完全使其硬化之硬化處理(以下,亦稱為“主硬化處理”。)分為單獨的步驟來進行。 The hardening treatment can be terminated when the composition becomes a semi-hardened state. In addition, after the composition is brought into a semi-cured state, a curing treatment may be further performed to complete the curing. Hardening treatment for bringing the composition into a semi-hardened state (hereinafter, also referred to as "semi-hardening treatment") and hardening treatment for completely hardening it (hereinafter, also referred to as "main curing treatment") may be used. ) are carried out in separate steps.

在半硬化處理中,例如,在基材上塗佈組成物而形成塗膜之後,可以直接在無加壓狀態下對基材上的塗膜進行加熱等而使其成為半硬化狀態的導熱材料(亦稱為“半硬化膜”或“半硬化片”),亦可以在一邊併用沖壓加工,一邊對基材上的塗膜進行加熱等而使其成為半硬化膜。在沖壓加工時,沖壓加工可以在上述加熱等之前或之後實施,亦可以在加熱期間進行。若在半硬化處理中實施沖壓加工,則有時會容易調整所獲得之半硬化膜的膜厚及/或容易降低半硬化膜中的空隙量。 在半硬化處理中,可以在將形成於各個基材上之塗膜彼此積層之狀態下進行半硬化處理,亦可以不積層塗膜彼此而進行半硬化處理。可以在使由組成物形成之塗膜與除了上述塗膜以外的材料進一步接觸之狀態下實施半硬化處理。 In the semi-hardening treatment, for example, after coating the composition on the base material to form a coating film, the coating film on the base material can be directly heated in a non-pressurized state to make it a heat-conducting material in a semi-hardened state. (Also known as "semi-cured film" or "semi-hardened sheet"), it is also possible to heat the coating film on the base material while stamping to make it a semi-cured film. In the pressing process, the pressing process may be performed before or after the above-mentioned heating or the like, or may be performed during the heating. When press working is performed during the semi-cured treatment, it may be easy to adjust the film thickness of the obtained semi-cured film and/or to easily reduce the amount of voids in the semi-cured film. In the semi-curing treatment, the semi-curing treatment may be performed in a state where the coating films formed on the respective substrates are laminated, or the semi-curing treatment may be performed without laminating the coating films. The semi-curing treatment may be performed in a state where the coating film formed of the composition is further brought into contact with a material other than the above-mentioned coating film.

可以將所獲得之半硬化膜直接用作導熱材料,亦可以對半硬化膜進一步實施主硬化處理之後將其用作完全硬化之導熱材料。 在主硬化處理中,可以將半硬化膜直接在無加壓狀態下進行加熱等,亦可以在進行沖壓加工之後,或者一邊進行沖壓,一邊進行加熱等。此時,在主硬化處理中,可以在使各個半硬化膜彼此積層之狀態下進行主硬化處理,亦可以不積層半硬化膜彼此而進行主硬化處理。 又,主硬化處理可以在將半硬化膜配置成與所使用之器件等接觸之狀態下實施。藉由主硬化處理使器件與本發明的導熱材料接著亦較佳。 The obtained semi-cured film can be directly used as a heat-conducting material, or it can be used as a fully cured heat-conducting material after the main curing treatment is performed on the semi-cured film. In the main hardening treatment, the semi-cured film may be directly heated without pressurization, or may be heated after pressing or while pressing. At this time, in the main curing treatment, the main curing treatment may be performed in a state where the semi-cured films are laminated, or the main curing treatment may be performed without laminating the semi-cured films. In addition, the main curing treatment can be performed in a state where the semi-cured film is placed in contact with the device or the like to be used. It is also preferred to bond the device to the thermally conductive material of the present invention by a main hardening process.

在半硬化處理及/或主硬化處理等中的硬化處理時可以實施之使用於沖壓加工之壓機並無限制,例如,可以使用平板壓機,亦可以使用輥壓機。 在使用輥壓機之情況下,例如,將在基材上形成塗膜而獲得之附塗膜之基材夾在兩根輥相對向之一對輥之間,一邊旋轉上述一對輥並使上述附塗膜之基材通過,一邊沿上述附塗膜之基材的膜厚方向施加壓力為較佳。關於上述附塗膜之基材,可以僅在塗膜的一表面上存在基材,亦可以在塗膜的兩個表面上存在基材。上述附塗膜之基材在輥壓機中可以僅通過1次,亦可以通過複數次。 在半硬化處理及/或主硬化處理等中進行硬化處理時,可以僅實施利用平板壓機之處理及利用輥壓機之處理中的一者,亦可以實施兩者。 There is no limitation to the press used for the press working during the hardening treatment in the semi-hardening treatment and/or the main hardening treatment, for example, a flat press machine or a roll press machine may be used. In the case of using a roll press machine, for example, a substrate with a coating film obtained by forming a coating film on a substrate is sandwiched between a pair of rollers facing each other, while rotating the pair of rollers and making It is preferable to apply pressure along the film thickness direction of the above-mentioned substrate with a coating film while passing the substrate with a coating film. Regarding the above-mentioned base material with a coating film, the base material may be present on only one surface of the coating film, or may be present on both surfaces of the coating film. The above-mentioned substrate with a coated film may pass through the roller press only once, or may pass through multiple times. When the hardening treatment is performed in the semi-hardening treatment and/or the main hardening treatment, only one of the treatment by a plate press and the treatment by a roll press may be performed, or both may be performed.

關於包括硬化反應之導熱材料的製作,亦能夠參閱“高導熱性複合材料”(CMC出版、竹澤由高著)。Regarding the production of thermally conductive materials including hardening reactions, see "High Thermally Conductive Composite Materials" (published by CMC, written by Yutaka Takezawa).

導熱材料的形狀依據用途能夠成形為各種形狀。作為所成形之導熱材料的典型的形狀,例如,可以舉出片狀。 亦即,使用本發明的組成物而獲得之導熱材料為導熱片亦較佳。 又,使用本發明的組成物而獲得之導熱材料的導熱性為各向同性而非各向異性為較佳。 The shape of the thermally conductive material can be formed into various shapes depending on the usage. As a typical shape of the molded thermally conductive material, for example, a sheet shape is mentioned. That is, it is also preferable that the thermally conductive material obtained by using the composition of the present invention is a thermally conductive sheet. Furthermore, it is preferable that the thermal conductivity of the thermally conductive material obtained by using the composition of the present invention is isotropic rather than anisotropic.

導熱材料具有絕緣性(電絕緣性)為較佳。換言之,本發明的組成物為導熱性絕緣組成物為較佳。 導熱材料在23℃相對濕度65%下的體積電阻率為10 10Ω・cm以上為較佳,10 12Ω・cm以上為更佳,10 14Ω・cm以上為進一步較佳。上限為10 18Ω・cm以下為較佳。 Thermally conductive materials are preferably insulating (electrically insulating). In other words, it is preferable that the composition of the present invention is a thermally conductive insulating composition. The volume resistivity of the thermally conductive material at 23°C and a relative humidity of 65% is preferably 10 10 Ω·cm or higher, more preferably 10 12 Ω·cm or higher, and still more preferably 10 14 Ω·cm or higher. The upper limit is preferably 10 18 Ω·cm or less.

〔導熱材料的用途〕 使用本發明的組成物而獲得之導熱材料能夠用作散熱片等散熱材料,並且能夠使用於各種器件的散熱用途。更具體而言,在器件上配置包含本發明的導熱材料之導熱層(或包含導熱片之導熱層)來製作附導熱層的器件,從而能夠將來自器件之熱量利用導熱層有效地進行散熱。上述導熱層可以為包含後述之導熱性多層片之導熱層。 由於使用本發明的組成物而獲得之導熱材料具有充分的導熱性並且具有高耐熱性,因此適用於在個人電腦、一般家用電器及汽車等電子設備中所使用之功率半導體器件的散熱用途。 此外,由於使用本發明的組成物而獲得之導熱材料即使在半硬化狀態下亦具有充分的導熱性,因此亦能夠用作配置於各種裝置的構件間隙等、用於光硬化之光難以到達之部位之散熱材料。又,由於接著性亦優異,因此亦能夠用作具有導熱性之黏合劑。 〔Applications of thermally conductive materials〕 The thermally conductive material obtained by using the composition of the present invention can be used as a heat dissipation material such as a heat sink, and can be used for heat dissipation of various devices. More specifically, a device with a thermally conductive layer is fabricated by disposing a thermally conductive layer containing the thermally conductive material of the present invention (or a thermally conductive layer containing a thermally conductive sheet) on the device, so that the heat from the device can be effectively dissipated by the thermally conductive layer. The above-mentioned heat conduction layer may be a heat conduction layer including a heat conduction multilayer sheet described later. Since the thermally conductive material obtained by using the composition of the present invention has sufficient thermal conductivity and high heat resistance, it is suitable for heat dissipation of power semiconductor devices used in electronic equipment such as personal computers, general household appliances, and automobiles. In addition, since the thermally conductive material obtained by using the composition of the present invention has sufficient thermal conductivity even in a semi-hardened state, it can also be used as a gap between components placed in various devices, etc. Parts of the heat dissipation material. Moreover, since adhesiveness is also excellent, it can also be used as an adhesive agent which has thermal conductivity.

使用本發明的組成物而獲得之導熱材料可以與除了由本組成物形成之構件以外的其他構件組合而使用。 例如,導熱材料(導熱片等)可以與除了由本組成物形成之層以外的其他的支撐體(被黏著材料)組合。 作為支撐體(被黏著材料),例如,可以舉出塑膠材料、金屬材料及玻璃。作為塑膠材料,例如,可以舉出聚對酞酸乙二酯(PET)等聚酯、聚碳酸酯、丙烯酸樹脂、環氧樹脂、聚胺酯、聚醯胺、聚烯烴、纖維素衍生物及矽酮(silicone)。作為金屬材料,例如,可以舉出銅及鋁。 支撐體(被黏著材料)為片狀亦較佳。 片狀的導熱材料(導熱片)的膜厚為100~300μm為較佳,150~250μm為更佳。 The thermally conductive material obtained by using the composition of the present invention can be used in combination with members other than members formed from the composition. For example, a thermally conductive material (thermally conductive sheet, etc.) may be combined with a support (material to be adhered) other than the layer formed of this composition. Examples of the support (material to be adhered) include plastic materials, metal materials, and glass. Examples of plastic materials include polyesters such as polyethylene terephthalate (PET), polycarbonates, acrylic resins, epoxy resins, polyurethanes, polyamides, polyolefins, cellulose derivatives, and silicones. (silicone). Examples of metal materials include copper and aluminum. It is also preferable that the support (material to be adhered) is in the form of a sheet. The film thickness of the sheet-shaped thermally conductive material (thermally conductive sheet) is preferably 100 to 300 μm, more preferably 150 to 250 μm.

又,對導熱材料(較佳為導熱片),可以組合黏合劑層及/或黏著劑層。 藉由將導熱材料經由上述黏合劑層及/或黏著劑層而與如器件那樣的需要轉移熱量之對象物接合,能夠實現導熱材料與對象物之間的更牢固的接合。由本發明的組成物形成之導熱材料與黏合劑層及黏著劑層的黏附性良好,並且亦能夠抑制導熱材料與黏合劑層或黏著劑層的界面處的剝離。 例如,作為導熱性多層片,可以製作具有導熱片及設置於上述導熱片的單面或雙面之黏合劑層或黏著劑層之導熱性多層片。 另外,在上述導熱片的單面或雙面,可以分別設置有黏合劑層及黏著劑層中的一者,亦可以設置有兩者。可以在上述導熱片的一個面設置黏合劑層,而在另一個面設置黏著劑層。又,在上述導熱片的單面或雙面,可以部分地設置黏合劑層及/或黏著劑層,亦可以在整個面設置。 另外,如上所述,本發明中,導熱片等導熱材料可以為半硬化狀態(半硬化膜),導熱性多層片中的導熱片可以為半硬化狀態。導熱性多層片中的黏合劑層可以被硬化,亦可以為半硬化狀態,亦可以為未硬化狀態。 [實施例] Also, for the thermally conductive material (preferably a thermally conductive sheet), an adhesive layer and/or an adhesive layer can be combined. By bonding the thermally conductive material to an object that needs to transfer heat, such as a device, through the above-mentioned adhesive layer and/or adhesive layer, stronger bonding between the thermally conductive material and the object can be achieved. The thermally conductive material formed from the composition of the present invention has good adhesion to the adhesive layer and the adhesive layer, and can also suppress peeling at the interface between the thermally conductive material and the adhesive layer or the adhesive layer. For example, as a thermally conductive multilayer sheet, a thermally conductive multilayer sheet having a thermally conductive sheet and an adhesive layer or an adhesive layer provided on one or both sides of the thermally conductive sheet can be produced. In addition, one or both of the adhesive layer and the adhesive layer may be respectively provided on one side or both sides of the above-mentioned heat conduction sheet, or both may be provided. An adhesive layer may be provided on one surface of the thermally conductive sheet, and an adhesive layer may be provided on the other surface. In addition, an adhesive layer and/or an adhesive layer may be partially provided on one or both surfaces of the above-mentioned thermally conductive sheet, or may be provided on the entire surface. In addition, as described above, in the present invention, the thermally conductive material such as the thermally conductive sheet may be in a semi-cured state (semi-cured film), and the thermally conductive sheet in the thermally conductive multilayer sheet may be in a semi-cured state. The adhesive layer in the heat conductive multilayer sheet may be cured, may be in a semi-cured state, or may be in an uncured state. [Example]

以下,基於實施例對本發明進一步詳細地進行說明。以下實施例中所示之材料、使用量、比例、處理內容及處理順序等,只要不脫離本發明的宗旨,則能夠適當地變更。故,本發明的範圍不應藉由以下所示之實施例進行限定性解釋。Hereinafter, the present invention will be described in further detail based on examples. Materials, usage amounts, ratios, processing contents, processing procedures, etc. shown in the following examples can be appropriately changed unless departing from the gist of the present invention. Therefore, the scope of the present invention should not be limitedly interpreted by the examples shown below.

[組成物的製備及評價] 〔各種成分〕 以下示出實施例及比較例中所使用之各種成分。 [Preparation and Evaluation of Composition] [various ingredients] Various components used in Examples and Comparative Examples are shown below.

<酚化合物><Phenolic compounds>

[化學式31]

Figure 02_image077
[chemical formula 31]
Figure 02_image077

<環氧化合物> B-8的重量平均分子量為3000,B-9的n值的平均值為10。 <Epoxy compound> The weight average molecular weight of B-8 was 3000, and the average value of the n value of B-9 was 10.

[化學式32]

Figure 02_image079
[chemical formula 32]
Figure 02_image079

<硬化促進劑> ・C-1:三鄰甲苯基膦 ・C-2:三苯基膦 ・C-3:2PHZ-PW(2-苯基-4,5-二羥基甲基咪唑) ・C-4:TPP-MK(四苯基鏻四對甲苯基硼酸鹽) <Hardening Accelerator> ・C-1: Tri-o-tolylphosphine ・C-2: Triphenylphosphine ・C-3: 2PHZ-PW (2-phenyl-4,5-dihydroxymethylimidazole) ・C-4: TPP-MK (tetraphenylphosphonium tetra-p-tolyl borate)

<特定無機物或表面修飾特定無機物> 以下示出各實施例及各比較例中所使用之特定無機物或表面修飾特定無機物。另外,在任意的表面修飾特定無機物中,表面修飾劑的含量相對於表面修飾特定無機物的總質量,亦超過0質量%且小於1質量%。 <Specified inorganic substances or surface-modified specified inorganic substances> Specific inorganic substances or surface-modifying specific inorganic substances used in each of Examples and Comparative Examples are shown below. Also, in any specific surface-modified inorganic substance, the content of the surface-modifying agent is more than 0% by mass and less than 1% by mass relative to the total mass of the specified surface-modified inorganic substance.

<凝聚狀氮化硼> ・HP-40:凝聚狀氮化硼(HP-40 MF100、平均粒徑:40μm、Mizushima Ferroalloy Co.,Ltd.製造) ・BN-A:藉由下述中示出之製造方法A製造之表面修飾凝聚狀氮化硼 ・BN-B:藉由下述中示出之製造方法B製造之表面修飾凝聚狀氮化硼 ・BN-C:藉由下述中示出之製造方法C製造之表面修飾凝聚狀氮化硼 ・BN-D:藉由下述中示出之製造方法D製造之表面修飾凝聚狀氮化硼 ・BN-E:藉由下述中示出之製造方法E製造之表面修飾凝聚狀氮化硼 <Condensed Boron Nitride> ・HP-40: Condensed boron nitride (HP-40 MF100, average particle size: 40 μm, manufactured by Mizushima Ferroalloy Co., Ltd.) ・BN-A: Surface-modified agglomerated boron nitride produced by the production method A shown below ・BN-B: Surface-modified agglomerated boron nitride produced by the production method B shown below ・BN-C: Surface-modified condensed boron nitride produced by the production method C shown below ・BN-D: Surface-modified agglomerated boron nitride produced by the production method D shown below ・BN-E: Surface-modified agglomerated boron nitride produced by the production method E shown below

(製造方法A) 使用電漿清潔機PDC210(Yamato Scientific co., ltd.製造),對凝聚狀氮化硼(HP-40 MF100)(15g)進行了真空電漿處理(氣體種類:O 2、壓力:30Pa、輸出:500W)。每進行5分鐘真空電漿處理時,攪拌待處理之凝聚狀氮化硼,進行真空電漿處理直至合計處理時間達到30分鐘,獲得了改質氮化硼粒子A。 在乙腈(30ml)中攪拌所獲得之改質氮化硼粒子A,在上述乙腈中進一步添加了矽烷偶合劑(Shin-Etsu Chemical Co.,Ltd.製造:X12-984S)的水解調整液(0.42g)。在室溫下將上述乙腈攪拌3小時,進行了吸附處理。 在過濾並取出上述乙腈中的改質氮化硼粒子A之後,用乙腈(30ml)清洗經過濾並取出之改質氮化硼粒子A,在40℃的烘箱中進行乾燥,從而獲得了BN-A。 另外,藉由將矽烷偶合劑(1g)、乙醇(500μl)、2-丙醇(500μl)、水(720μl)及乙酸(100μl)進行混合,並且攪拌1小時以製備了矽烷偶合劑的水解調整液。在以下實施例或比較例中,只要沒有特別說明,則矽烷偶合劑的水解調整液的摻合亦相同。 又,“X12-984S”係具有環氧基及乙氧基甲矽烷基之、聚合物類型的矽烷偶合劑。 (Manufacturing method A) Condensed boron nitride (HP-40 MF100) (15 g) was subjected to vacuum plasma treatment (gas types: O 2 , Pressure: 30Pa, output: 500W). When the vacuum plasma treatment was performed for 5 minutes, the condensed boron nitride to be treated was stirred, and the vacuum plasma treatment was performed until the total treatment time reached 30 minutes, and modified boron nitride particles A were obtained. The obtained modified boron nitride particles A were stirred in acetonitrile (30 ml), and a hydrolysis adjustment solution (0.42 g). The above-mentioned acetonitrile was stirred at room temperature for 3 hours to carry out adsorption treatment. After filtering and taking out the above-mentioned modified boron nitride particles A in acetonitrile, the filtered and taken-out modified boron nitride particles A were washed with acetonitrile (30 ml), and dried in an oven at 40° C., thereby obtaining BN- a. In addition, a hydrolysis-adjusted silane coupling agent was prepared by mixing silane coupling agent (1 g), ethanol (500 μl), 2-propanol (500 μl), water (720 μl) and acetic acid (100 μl) and stirring for 1 hour. liquid. In the following examples or comparative examples, unless otherwise specified, the blending of the hydrolysis adjustment solution of the silane coupling agent is also the same. Also, "X12-984S" is a polymer-type silane coupling agent having an epoxy group and an ethoxysilyl group.

(製造方法B) 向NaOH水溶液(NaOH:40g/水:400ml)中添加凝聚狀氮化硼(HP-40 MF-100、50g)並進行了攪拌。向上述NaOH水溶液中進一步添加過硫酸鈉水(過硫酸鈉:9.6g/水:100ml)之後,將上述NaOH水溶液升溫至50℃,進一步攪拌了3小時。攪拌時使用三合一馬達(Shinto Scientific Co., Ltd.製造)以轉速150rpm進行了攪拌。將上述NaOH水溶液冷卻至室溫之後,過濾並取出上述NaOH水溶液中的凝聚狀氮化硼粒子B,用水(500ml)及乙腈(250ml)清洗經過濾並取出之凝聚狀氮化硼粒子B,從而獲得了改質氮化硼粒子B。 在乙腈(100ml)中攪拌所獲得之改質氮化硼粒子B,在上述乙腈中進一步添加了矽烷偶合劑(Shin-Etsu Chemical Co.,Ltd.製造:X12-984S)的水解調整液(1.25g)。在室溫下將上述乙腈攪拌3小時,進行了吸附處理。在過濾並取出上述乙腈中的改質氮化硼粒子B之後,用乙腈(100ml)清洗經過濾並取出之改質氮化硼粒子B,在40℃的烘箱中進行乾燥,從而獲得了BN-B。 (Manufacturing method B) Agglomerated boron nitride (HP-40 MF-100, 50 g) was added to an aqueous NaOH solution (NaOH: 40 g/water: 400 ml) and stirred. After further adding sodium persulfate water (sodium persulfate: 9.6 g/water: 100 ml) to the above NaOH aqueous solution, the above NaOH aqueous solution was heated to 50° C. and further stirred for 3 hours. Stirring was performed at a rotation speed of 150 rpm using a three-in-one motor (manufactured by Shinto Scientific Co., Ltd.). After cooling the above-mentioned NaOH aqueous solution to room temperature, filter and take out the agglomerated boron nitride particles B in the above-mentioned NaOH aqueous solution, wash the filtered and taken-out agglomerated boron nitride particles B with water (500ml) and acetonitrile (250ml), thereby Modified boron nitride particles B were obtained. The obtained modified boron nitride particles B were stirred in acetonitrile (100 ml), and a hydrolysis adjustment solution (1.25 g). The above-mentioned acetonitrile was stirred at room temperature for 3 hours, and adsorption treatment was performed. After filtering and taking out the above-mentioned modified boron nitride particles B in acetonitrile, the filtered and taken-out modified boron nitride particles B were washed with acetonitrile (100 ml), and dried in an oven at 40° C., thereby obtaining BN- b.

(製造方法C) 藉由向水(400ml)中添加氮化硼(HP-40 MF-100、50g)並進行攪拌而獲得了混合液。向上述混合液中進一步添加次氯酸鈉水(次氯酸鈉五水合物:48g/水:100ml)之後,將上述混合液升溫至50℃,進一步攪拌了3小時。攪拌時使用三合一馬達(Shinto Scientific Co.,Ltd.製造),以150rpm進行了攪拌。 將上述混合液冷卻至室溫之後,過濾並取出上述混合液中的凝聚狀氮化硼粒子,用水(500ml)及乙腈(250ml)清洗經過濾並取出之凝聚狀氮化硼粒子,從而獲得了改質氮化硼粒子C。 在乙腈(100ml)中攪拌所獲得之改質氮化硼粒子C,在上述乙腈中進一步添加了矽烷偶合劑(X12-984S)的水解調整液(1.25g)。在室溫下將上述乙腈攪拌3小時,進行了吸附處理。在過濾並取出上述乙腈中的改質氮化硼粒子C之後,用乙腈(100ml)清洗經過濾並取出之改質氮化硼粒子C,在40℃的烘箱中進行乾燥,從而獲得了BN-C。 (Manufacturing method C) A mixed solution was obtained by adding and stirring boron nitride (HP-40 MF-100, 50 g) to water (400 ml). After sodium hypochlorite water (sodium hypochlorite pentahydrate: 48 g/water: 100 ml) was further added to the above mixed liquid, the temperature of the above mixed liquid was raised to 50° C. and further stirred for 3 hours. Stirring was performed at 150 rpm using a three-in-one motor (manufactured by Shinto Scientific Co., Ltd.) during stirring. After the above-mentioned mixed solution is cooled to room temperature, filter and take out the agglomerated boron nitride particles in the above-mentioned mixed solution, wash the filtered and taken-out agglomerated boron nitride particles with water (500ml) and acetonitrile (250ml), thereby obtaining Modified boron nitride particles C. The obtained modified boron nitride particles C were stirred in acetonitrile (100 ml), and a hydrolysis adjustment solution (1.25 g) of a silane coupling agent (X12-984S) was further added to the acetonitrile. The above-mentioned acetonitrile was stirred at room temperature for 3 hours, and adsorption treatment was performed. After filtering and taking out the above-mentioned modified boron nitride particles C in acetonitrile, the filtered and taken-out modified boron nitride particles C were washed with acetonitrile (100 ml), and dried in an oven at 40° C., thereby obtaining BN- c.

(製造方法D) 將凝聚狀氮化硼(HP-40 MF-100、50g)在1000℃下加熱1小時而獲得了改質氮化硼粒子D。用水(500ml)進行再漿料化清洗並過濾所獲得之改質氮化硼粒子D之後,在乙腈(100ml)中進行攪拌,在上述乙腈中進一步添加了矽烷偶合劑(KBM-403)的水解調整液(1.25g)。在室溫下將上述乙腈攪拌3小時,進行了吸附處理。在過濾並取出上述乙腈中的改質氮化硼粒子D之後,用乙腈(100ml)清洗經過濾並取出之改質氮化硼粒子D,在40℃的烘箱中進行乾燥,從而獲得了BN-D。 (Manufacturing method D) Agglomerated boron nitride (HP-40 MF-100, 50 g) was heated at 1000° C. for 1 hour to obtain modified boron nitride particles D. After reslurrying and washing with water (500ml) and filtering the obtained modified boron nitride particles D, they were stirred in acetonitrile (100ml) and hydrolyzed by adding a silane coupling agent (KBM-403) to the acetonitrile Adjusting solution (1.25g). The above-mentioned acetonitrile was stirred at room temperature for 3 hours, and adsorption treatment was performed. After filtering and taking out the above-mentioned modified boron nitride particles D in acetonitrile, the filtered and taken-out modified boron nitride particles D were washed with acetonitrile (100 ml), and dried in an oven at 40° C., thereby obtaining BN- d.

(製造方法E) 將凝聚狀氮化硼(HP-40 MF-100、50g)在900℃下加熱4小時而獲得了改質氮化硼粒子E。用水(500ml)進行再漿料化清洗並過濾所獲得之改質氮化硼粒子E之後,在乙腈(100ml)中進行攪拌,在上述乙腈中進一步添加了矽烷偶合劑(KBM-403)的水解調整液(1.25g)。在室溫下將上述乙腈攪拌3小時,進行了吸附處理。在過濾並取出上述乙腈中的改質氮化硼粒子E之後,用乙腈(100ml)清洗經過濾並取出之改質氮化硼粒子E,在40℃的烘箱中進行乾燥,從而獲得了BN-E。 (Manufacturing method E) Agglomerated boron nitride (HP-40 MF-100, 50 g) was heated at 900° C. for 4 hours to obtain modified boron nitride particles E. After reslurrying and washing with water (500ml) and filtering the obtained modified boron nitride particles E, they were stirred in acetonitrile (100ml) and hydrolyzed by adding a silane coupling agent (KBM-403) to the acetonitrile Adjusting solution (1.25g). The above-mentioned acetonitrile was stirred at room temperature for 3 hours, and adsorption treatment was performed. After filtering and taking out the above-mentioned modified boron nitride particles E in acetonitrile, the filtered and taken-out modified boron nitride particles E were washed with acetonitrile (100 ml), and dried in an oven at 40° C., thereby obtaining BN- e.

<無機物X> ・AA-03F:氧化鋁(平均粒徑:0.25μm、Sumitomo Chemical Co., Ltd.製造) ・表面修飾AA-03F:表面修飾氧化鋁(平均粒徑:0.25μm、Sumitomo Chemical Co., Ltd.製造) ・QSG-100:表面修飾二氧化矽(平均粒徑:0.11μm、 Shin-Etsu Chemical Co., Ltd.製造) ・QSG-10:表面修飾二氧化矽(平均粒徑:0.015μm、 Shin-Etsu Chemical Co., Ltd.製造) <Inorganic X> ・AA-03F: Aluminum oxide (average particle size: 0.25μm, manufactured by Sumitomo Chemical Co., Ltd.) ・Surface modification AA-03F: Surface modification alumina (average particle size: 0.25 μm, manufactured by Sumitomo Chemical Co., Ltd.) ・QSG-100: Surface-modified silica (average particle size: 0.11 μm, manufactured by Shin-Etsu Chemical Co., Ltd.) ・QSG-10: Surface-modified silica (average particle size: 0.015μm, manufactured by Shin-Etsu Chemical Co., Ltd.)

<無機物Y> ・表面修飾AA-3:表面修飾氧化鋁(平均粒徑:3μm、Sumitomo Chemical Co., Ltd.製造、相當於其他表面修飾無機物) ・AA-04:氧化鋁(平均粒徑:0.40μm、Sumitomo Chemical Co., Ltd.製造) <Inorganic substance Y> ・Surface modification AA-3: Surface modification alumina (average particle size: 3 μm, manufactured by Sumitomo Chemical Co., Ltd., equivalent to other surface modification inorganic substances) ・AA-04: Aluminum oxide (average particle size: 0.40 μm, manufactured by Sumitomo Chemical Co., Ltd.)

<順丁烯二醯亞胺化合物> ・F-1:雙(3-乙基-5-甲基-4-順丁烯二醯亞胺苯基)甲烷(Bis(3-ethyl-5-methyl-4-maleimidophenyl)methane)(FUJIFILM Corporation製造) <Maleimide compound> ・F-1: Bis(3-ethyl-5-methyl-4-maleimidophenyl)methane (Bis(3-ethyl-5-methyl-4-maleimidophenyl)methane) (FUJIFILM Corporation manufacture)

<酸酐> ・H-1:苯乙烯順丁烯二酸酐共聚物(XIRAN EF-40、Polyscope Polymers B.V.製造) <Acid anhydride> ・H-1: Styrene maleic anhydride copolymer (XIRAN EF-40, manufactured by Polyscope Polymers B.V.)

<離子捕捉劑> ・G-1:KW-2000、氧化鋁/氧化鎂固溶體(Mg 0.7Al 0.3O 1.15)、Kyowa Chemical Industry Co. Ltd.製造 ・G-2:IXE-6107、Zr,Bi系(TOAGOSEI CO.,LTD.製造) <Ion Scavenger> ・G-1: KW-2000, alumina/magnesia solid solution (Mg 0.7 Al 0.3 O 1.15 ), manufactured by Kyowa Chemical Industry Co. Ltd. ・G-2: IXE-6107, Zr, Bi-based (manufactured by TOAGOSEI CO.,LTD.)

<溶劑> 作為溶劑,使用了環戊酮。 <Solvent> As a solvent, cyclopentanone was used.

〔組成物的製備〕 製備了將下述表1所示之組合的環氧化合物與酚化合物以當量(環氧化合物的環氧基的數量與酚化合物的羥基的數量相等之量)摻合而成之混合體。 按照上述混合體、溶劑、依需使用之離子捕捉劑、依需使用之酸酐、依需使用之順丁烯二醯亞胺化合物及硬化促進劑的順序進行混合之後,添加了特定無機物、表面修飾特定無機物或依需添加了無機物Y。利用自轉公轉混合機(THINKY CORPORATION.製造、Awatori Netaro ARE-310)對所獲得之混合物進行5分鐘的處理,獲得了各實施例或各比較例的組成物(硬化性組成物)。 〔Preparation of composition〕 A mixture in which epoxy compounds and phenol compounds in combinations shown in Table 1 below were blended in an equivalent amount (an amount in which the number of epoxy groups of the epoxy compound is equal to the number of hydroxyl groups of the phenol compound) was prepared. After mixing the above-mentioned mixture, solvent, ion scavenger if necessary, acid anhydride if necessary, maleimide compound and hardening accelerator if necessary, specific inorganic substances and surface modification are added Specific inorganic substances or inorganic substance Y added as needed. The obtained mixture was processed for 5 minutes with an autorotation-revolving mixer (manufactured by THINKY CORPORATION., Awatori Netaro ARE-310) to obtain compositions (curable compositions) of each Example or each Comparative Example.

各實施例及各比較例中的溶劑的添加量設為使各實施例及各比較例的組成物的固體成分濃度成為50~80質量%之量。 另外,關於組成物的固體成分濃度,在上述範圍內對每個組成物進行了調整,以使組成物的黏度大致相同。 調整添加量,以使環氧化合物和酚化合物的合計含量相對於組成物的總固體成分成為在表1中的“合計量(質量%)”欄中示出之量,並且環氧化合物和酚化合物分別成為當量(環氧化合物的環氧基的數量與酚化合物的羥基的數量成為相等之量)。 The addition amount of the solvent in each Example and each comparative example was made into the amount which made the solid content concentration of the composition of each Example and each comparative example 50-80 mass %. In addition, the solid content concentration of the composition was adjusted for each composition within the above-mentioned range so that the viscosity of the composition was substantially the same. Adjust the addition amount so that the total content of the epoxy compound and the phenolic compound becomes the amount shown in the "total amount (mass %)" column in Table 1 with respect to the total solid content of the composition, and the epoxy compound and the phenolic compound The compounds are equivalent (the number of epoxy groups of the epoxy compound and the number of hydroxyl groups of the phenol compound are equal).

[評價] 〔半硬化片(半硬化膜)的製作〕 使用付測微器之塗敷器,在經脫模處理之PET薄膜(PET756501 LINTEC Corporation製造、膜厚75μm)的脫模面上均勻地塗佈所製備之組成物,並且在120℃下乾燥4分鐘而製作了半硬化片(半硬化膜)。 [Evaluation] 〔Production of semi-hardened sheet (semi-hardened film)〕 Using an applicator attached to a micrometer, the prepared composition was uniformly coated on the release surface of a release-treated PET film (PET756501 manufactured by LINTEC Corporation, film thickness 75 μm), and dried at 120° C. for 4 The semi-hardened sheet (semi-hardened film) was produced in minutes.

〔導熱片(半硬化膜)的製作〕 在所獲得之半硬化片上覆蓋經脫模處理之PET薄膜,並在空氣下進行了熱壓(在熱板溫度180℃、壓力5MPa下處理5分鐘)。然後,在常壓下,且在180℃下加熱處理90分鐘而獲得了樹脂片。剝離存在於樹脂片的兩面之PET薄膜,獲得了平均膜厚為120μm的導熱片(導熱材料)。 〔Production of thermally conductive sheet (semi-cured film)〕 The obtained semi-hardened sheet was covered with a release-treated PET film, and hot-pressed in air (at a hot plate temperature of 180° C. and a pressure of 5 MPa for 5 minutes). Then, it heat-processed at 180 degreeC for 90 minutes under normal pressure, and obtained the resin sheet. The PET films present on both sides of the resin sheet were peeled off to obtain a heat conduction sheet (heat conduction material) with an average film thickness of 120 μm.

〔導熱性的評價〕 使用在上述〔導熱片(半硬化膜)的製作〕中獲得之導熱片評價了導熱性。 (1)使用NETZSCH公司製造之“LFA467”,並使用雷射閃光法測量了導熱片的厚度方向上的熱擴散率。 (2)使用METTLER TOLEDO公司製造之天秤“XS204”,並使用阿基米德法測量了導熱片的比重(使用“固體比重測量套組”)。 (3)使用Seiko Instruments Inc.製造之“DSC320/6200”,在10℃/分鐘的升溫條件下,求出了25℃下之導熱片的比熱。 (4)對所獲得之熱擴散率乘以比重及比熱,而計算出導熱片的導熱率。 〔Evaluation of thermal conductivity〕 Thermal conductivity was evaluated using the thermally conductive sheet obtained in the above [Preparation of thermally conductive sheet (semi-cured film)]. (1) Using "LFA467" manufactured by NETZSCH, the thermal diffusivity in the thickness direction of the thermally conductive sheet was measured by the laser flash method. (2) Using the balance "XS204" manufactured by METTLER TOLEDO, the specific gravity of the thermal conductive sheet was measured using the Archimedes method (using the "solid specific gravity measurement kit"). (3) Using "DSC320/6200" manufactured by Seiko Instruments Inc., the specific heat of the thermally conductive sheet at 25°C was determined under the temperature rise condition of 10°C/min. (4) Calculate the thermal conductivity of the heat conduction sheet by multiplying the obtained thermal diffusivity by the specific gravity and specific heat.

參照下述基準將導熱片的導熱率進行區分,以作為使用各實施例或各比較例的組成物而獲得之導熱片(導熱材料)的導熱性的評價。 A +:17W/mK以上 A:15W/mK以上且小於17W/mK B:13W/mK以上且小於15W/mK C:10W/mK以上且小於13W/mK D:小於10W/mK The thermal conductivity of the thermally conductive sheet was classified with reference to the following criteria to evaluate the thermal conductivity of the thermally conductive sheet (thermally conductive material) obtained using the composition of each Example or each comparative example. A + : above 17W/mK A: above 15W/mK and less than 17W/mK B: above 13W/mK and below 15W/mK C: above 10W/mK and below 13W/mK D: below 10W/mK

〔耐熱性(Tg)的評價〕 對在上述〔導熱片(半硬化膜)的製作〕中獲得之導熱片的Tg進行了測量。 測量時使用Universal Building Materials Co.,Ltd.製造之動態黏彈性測量裝置“Rheogel-E4000”,將頻率為1Hz時之tanδ峰設為Tg。升溫速度為5℃/分鐘、在25~300℃的範圍內實施了測量。 [Evaluation of heat resistance (Tg)] The Tg of the thermally conductive sheet obtained in the above [Production of the thermally conductive sheet (semi-cured film)] was measured. For the measurement, a dynamic viscoelasticity measuring device "Rheogel-E4000" manufactured by Universal Building Materials Co., Ltd. was used, and the tan δ peak at a frequency of 1 Hz was defined as Tg. The temperature increase rate was 5°C/min, and the measurement was carried out in the range of 25 to 300°C.

參照下述基準將導熱片的Tg進行區分,以作為使用各實施例或各比較例的組成物而獲得之導熱片(導熱材料)的耐熱性的評價。 A:170℃以上 B:160℃以上且小於170℃ C:小於160℃ The Tg of the thermally conductive sheet was classified with reference to the following criteria to evaluate the heat resistance of the thermally conductive sheet (thermally conductive material) obtained using the composition of each Example or each Comparative Example. A: Above 170°C B: Above 160°C and below 170°C C: less than 160°C

〔絕緣性的評價〕 使用在上述〔導熱片(半硬化膜)的製作〕中所獲得之導熱片,在85℃、85%RH的環境下施加1kV的電壓,測量了試樣的絕緣破壞為止的時間。 參照下述基準將試樣的絕緣破壤為止的時間進行區分,以作為使用各實施例或各比較例的組成物而獲得之導熱片(導熱材料)的絕緣性的評價。 A:500小時以上 B:100小時以上且小於500小時 C:小於100小時 〔Evaluation of insulation〕 Using the thermally conductive sheet obtained in the above [Preparation of thermally conductive sheet (semi-cured film)], a voltage of 1 kV was applied in an environment of 85° C. and 85% RH, and the time until the dielectric breakdown of the sample was measured. The time until the insulation of the samples broke the soil was classified with reference to the following criteria to evaluate the insulation properties of the thermally conductive sheets (thermally conductive materials) obtained using the compositions of each Example or each Comparative Example. A: More than 500 hours B: More than 100 hours and less than 500 hours C: less than 100 hours

〔焊錫耐熱性的評價〕 將在上述〔半硬化片(半硬化膜)的製作〕中所獲得之半硬化片夾在厚度2mm的銅基板與厚度0.15mm的銅箔之間,在空氣下進行熱壓(在熱板溫度180℃、壓力5MPa下處理5分鐘),從而獲得了具有“銅基板-導熱片-銅箔”的結構之積層體。 對所獲得之積層體中的0.15mm的銅箔進行蝕刻處理,使其成為直徑為2cm的圓形狀,並且將上述積層體作為具有“銅基板-導熱片-直徑2cm的圓形狀的銅箔”的結構之用於焊錫耐熱性試驗之樣品。 對上述樣品實施了3次在300℃下將其加熱5分鐘之後冷卻至室溫(25℃)之加熱處理。然後,在所獲得之樣品中,剝離了直徑2cm的圓形狀的銅箔。 目視觀察經剝離之樣品的破壞狀態,確認了在“銅基板-導熱片”之間的一部分或整個表面上是否發生了界面剝離,參照下述區分評價了導熱片的焊錫耐熱性。 A:在“銅基板-導熱片”之間的一部分或整個表面上,未確認到界面剝離。 B:在“銅基板-導熱片”之間的一部分確認到界面剝離。 C:在“銅基板-導熱片”之間的整個表面確認到界面剝離。 〔Evaluation of solder heat resistance〕 The semi-hardened sheet obtained in the above [production of semi-hardened sheet (semi-hardened film)] is sandwiched between a copper substrate with a thickness of 2mm and a copper foil with a thickness of 0.15mm, and hot-pressed under air (at the temperature of the hot plate 180°C, 5 minutes at a pressure of 5MPa), thus obtaining a laminate with a structure of "copper substrate-heat conduction sheet-copper foil". The 0.15 mm copper foil in the obtained laminate was etched to a circular shape with a diameter of 2 cm, and the above laminate was used as "copper substrate-heat conduction sheet-circular copper foil with a diameter of 2 cm" The structure of the sample used in the solder heat resistance test. The above sample was heated at 300° C. for 5 minutes and then cooled to room temperature (25° C.) for three times. Then, in the obtained sample, a circular copper foil having a diameter of 2 cm was peeled off. The fractured state of the peeled sample was visually observed to confirm whether interfacial peeling had occurred on a part or the entire surface between the "copper substrate and the thermally conductive sheet", and the solder heat resistance of the thermally conductive sheet was evaluated referring to the following classification. A: Interfacial peeling was not confirmed on a part or the entire surface between the "copper substrate and the heat transfer sheet". B: Interfacial delamination was confirmed in a part between "copper substrate-heat conduction sheet". C: Interfacial peeling was confirmed on the entire surface between the "copper substrate and the thermally conductive sheet".

[結果] 以下,將評價結果示於表1。 表中,“(D)/(E)”的欄表示凝聚狀氮化硼的含量與無機物X的含量之質量比(凝聚狀氮化硼的含量/無機物X的含量)。 [result] The evaluation results are shown in Table 1 below. In the table, the column of "(D)/(E)" indicates the mass ratio of the content of the aggregated boron nitride to the content of the inorganic substance X (content of aggregated boron nitride/content of the inorganic substance X).

[表1]    硬化性組成物 評價 酚化合物和環氧化合物 硬化促進劑(C) 凝聚狀氮化硼 (D) 無機物Y (I) 無機物X (E) (D) /(E) (D) /(E+I) 添加劑 酚化合物(A) 環氧化合物(B) 合計量(質量%) 順丁烯二醯亞胺化合物(F) 酸酐 (H) 離子捕捉劑 (G) 導熱性 耐熱性 絕緣性 焊錫耐熱性 種類 種類 種類 含量(質量%) 種類 平均粒徑(μm) 含量(質量%) 種類 平均粒徑(μm) 含量(質量%) 種類 平均粒徑(μm) 含量(質量%) 種類 含量(質量%) 種類 含量(質量%) 種類 含量(質量%) 實施例1 A-2 B-3 13.9 C-1 0.1 HP-40 40 60 - - - AA-03F 0.25 20 3.0 - F-1 5 - - G-1 1 C A A A 實施例2 A-2 B-3 13.9 C-1 0.1 HP-40 40 70 - - - AA-03F 0.25 10 7.0 - F-1 5 - - G-1 1 B A A A 實施例3 A-2 B-3 13.9 C-1 0.1 HP-40 40 75 - - - AA-03F 0.25 5 15.0 - F-1 5 - - G-1 1 A A A A 實施例4 A-2 B-3 13.9 C-1 0.1 HP-40 40 75 - - - 表面修飾AA-03F 0.25 5 15.0 - F-1 5 - - G-1 1 A A A A 實施例5 A-2 B-3 18.9 C-1 0.1 HP-40 40 75 - - - 表面修飾AA-03F 0.25 5 15.0 - - - - - G-1 1 A B A A 實施例6 A-2 B-3 19.9 C-1 0.1 HP-40 40 70 - - - 表面修飾AA-03F 0.25 5 14.0 - F-1 5 - - - - A A B A 實施例7 A-1 B-3 13.9 C-1 0.1 HP-40 40 75 - - - 表面修飾AA-03F 0.25 5 15.0 - F-1 5 - - G-1 1 A A A A 實施例8 A-2 B-1 13.9 C-1 0.1 HP-40 40 75 - - - 表面修飾AA-03F 0.25 5 15.0 - F-1 5 - - G-1 1 A A A A 實施例9 A-2 B-2 13.9 C-1 0.1 HP-40 40 75 - - - 表面修飾AA-03F 0.25 5 15.0 - F-1 5 - - G-1 1 A A A A 實施例10 A-2 B-4 13.9 C-1 0.1 HP-40 40 75 - - - 表面修飾AA-03F 0.25 5 15.0 - F-1 5 - - G-1 1 A A A A 實施例11 A-2 B-5 13.9 C-1 0.1 HP-40 40 75 - - - 表面修飾AA-03F 0.25 5 15.0 - F-1 5 - - G-1 1 A A A A 實施例12 A-2 B-6 13.9 C-1 0.1 HP-40 40 75 - - - 表面修飾AA-03F 0.25 5 15.0 - F-1 5 - - G-1 1 A A A A 實施例13 A-2 B-7 13.9 C-1 0.1 HP-40 40 75 - - - 表面修飾AA-03F 0.25 5 15.0 - F-1 5 - - G-1 1 A A A A 實施例14 A-2 B-8 13.9 C-1 0.1 HP-40 40 75 - - - 表面修飾AA-03F 0.25 5 15.0 - F-1 5 - - G-1 1 A A A A 實施例15 A-2 B-9 13.9 C-1 0.1 HP-40 40 75 - - - 表面修飾AA-03F 0.25 5 15.0 - F-1 5 - - G-1 1 A A A A 實施例16 A-2 B-10 13.9 C-1 0.1 HP-40 40 75 - - - 表面修飾AA-03F 0.25 5 15.0 - F-1 5 - - G-1 1 A A A A 實施例17 A-2 B-11 13.9 C-1 0.1 HP-40 40 75 - - - 表面修飾AA-03F 0.25 5 15.0 - F-1 5 - - G-1 1 B B B B 實施例18 A-2 B-3 13.9 C-1 0.1 HP-40 40 75 - - - 表面修飾AA-03F 0.25 5 15.0 - F-1 5 - - G-2 1 A A A A 實施例19 A-2 B-3 13.9 C-2 0.1 HP-40 40 75    - - 表面修飾AA-03F 0.25 5 15.0 - F-1 5 - - G-1 1 A A A A 實施例20 A-2 B-3 13.9 C-3 0.1 HP-40 40 75 - - - 表面修飾AA-03F 0.25 5 15.0 - F-1 5 - - G-1 1 A A A A 實施例21 A-2 B-3 13.9 C-4 0.1 HP-40 40 75 - - - 表面修飾AA-03F 0.25 5 15.0 - F-1 5 - - G-1 1 A A A A 實施例22 A-2 B-3 13.9 C-1 0.1 BN-A 40 75 - - - 表面修飾AA-03F 0.25 5 15.0 - F-1 5 - - G-1 1 A + A A A 實施例23 A-2 B-3 13.9 C-1 0.1 BN-B 40 75 - - - 表面修飾AA-03F 0.25 5 15.0 - F-1 5 - - G-1 1 A + A A A 實施例24 A-2 B-3 13.9 C-1 0.1 BN-C 40 75 - - - 表面修飾AA-03F 0.25 5 15.0 - F-1 5 - - G-1 1 A + A A A [Table 1] hardening composition Evaluation Phenolic Compounds and Epoxy Compounds Hardening Accelerator (C) Condensed boron nitride (D) Inorganic Y (I) Inorganic X (E) (D) /(E) (D) /(E+I) additive Phenolic compounds (A) Epoxy compound (B) Total amount (mass%) Maleimide compound (F) Anhydride (H) Ion Scavenger (G) thermal conductivity heat resistance insulation Solder heat resistance type type type Content (mass%) type Average particle size (μm) Content (mass%) type Average particle size (μm) Content (mass%) type Average particle size (μm) Content (mass%) type Content (mass%) type Content (mass%) type Content (mass%) Example 1 A-2 B-3 13.9 C-1 0.1 HP-40 40 60 - - - AA-03F 0.25 20 3.0 - F-1 5 - - G-1 1 C A A A Example 2 A-2 B-3 13.9 C-1 0.1 HP-40 40 70 - - - AA-03F 0.25 10 7.0 - F-1 5 - - G-1 1 B A A A Example 3 A-2 B-3 13.9 C-1 0.1 HP-40 40 75 - - - AA-03F 0.25 5 15.0 - F-1 5 - - G-1 1 A A A A Example 4 A-2 B-3 13.9 C-1 0.1 HP-40 40 75 - - - Surface modification AA-03F 0.25 5 15.0 - F-1 5 - - G-1 1 A A A A Example 5 A-2 B-3 18.9 C-1 0.1 HP-40 40 75 - - - Surface modification AA-03F 0.25 5 15.0 - - - - - G-1 1 A B A A Example 6 A-2 B-3 19.9 C-1 0.1 HP-40 40 70 - - - Surface modification AA-03F 0.25 5 14.0 - F-1 5 - - - - A A B A Example 7 A-1 B-3 13.9 C-1 0.1 HP-40 40 75 - - - Surface modification AA-03F 0.25 5 15.0 - F-1 5 - - G-1 1 A A A A Example 8 A-2 B-1 13.9 C-1 0.1 HP-40 40 75 - - - Surface modification AA-03F 0.25 5 15.0 - F-1 5 - - G-1 1 A A A A Example 9 A-2 B-2 13.9 C-1 0.1 HP-40 40 75 - - - Surface modification AA-03F 0.25 5 15.0 - F-1 5 - - G-1 1 A A A A Example 10 A-2 B-4 13.9 C-1 0.1 HP-40 40 75 - - - Surface modification AA-03F 0.25 5 15.0 - F-1 5 - - G-1 1 A A A A Example 11 A-2 B-5 13.9 C-1 0.1 HP-40 40 75 - - - Surface modification AA-03F 0.25 5 15.0 - F-1 5 - - G-1 1 A A A A Example 12 A-2 B-6 13.9 C-1 0.1 HP-40 40 75 - - - Surface modification AA-03F 0.25 5 15.0 - F-1 5 - - G-1 1 A A A A Example 13 A-2 B-7 13.9 C-1 0.1 HP-40 40 75 - - - Surface modification AA-03F 0.25 5 15.0 - F-1 5 - - G-1 1 A A A A Example 14 A-2 B-8 13.9 C-1 0.1 HP-40 40 75 - - - Surface modification AA-03F 0.25 5 15.0 - F-1 5 - - G-1 1 A A A A Example 15 A-2 B-9 13.9 C-1 0.1 HP-40 40 75 - - - Surface modification AA-03F 0.25 5 15.0 - F-1 5 - - G-1 1 A A A A Example 16 A-2 B-10 13.9 C-1 0.1 HP-40 40 75 - - - Surface modification AA-03F 0.25 5 15.0 - F-1 5 - - G-1 1 A A A A Example 17 A-2 B-11 13.9 C-1 0.1 HP-40 40 75 - - - Surface modification AA-03F 0.25 5 15.0 - F-1 5 - - G-1 1 B B B B Example 18 A-2 B-3 13.9 C-1 0.1 HP-40 40 75 - - - Surface modification AA-03F 0.25 5 15.0 - F-1 5 - - G-2 1 A A A A Example 19 A-2 B-3 13.9 C-2 0.1 HP-40 40 75 - - Surface modification AA-03F 0.25 5 15.0 - F-1 5 - - G-1 1 A A A A Example 20 A-2 B-3 13.9 C-3 0.1 HP-40 40 75 - - - Surface modification AA-03F 0.25 5 15.0 - F-1 5 - - G-1 1 A A A A Example 21 A-2 B-3 13.9 C-4 0.1 HP-40 40 75 - - - Surface modification AA-03F 0.25 5 15.0 - F-1 5 - - G-1 1 A A A A Example 22 A-2 B-3 13.9 C-1 0.1 BN-A 40 75 - - - Surface modification AA-03F 0.25 5 15.0 - F-1 5 - - G-1 1 A + A A A Example 23 A-2 B-3 13.9 C-1 0.1 BN-B 40 75 - - - Surface modification AA-03F 0.25 5 15.0 - F-1 5 - - G-1 1 A + A A A Example 24 A-2 B-3 13.9 C-1 0.1 BN-C 40 75 - - - Surface modification AA-03F 0.25 5 15.0 - F-1 5 - - G-1 1 A + A A A

[表2]    硬化性組成物 評價 酚化合物和環氧化合物 硬化促進劑(C) 凝聚狀氮化硼 (D) 無機物Y (I) 無機物X (E) (D) /(E) (D) /(E+I) 添加劑 酚化合物(A) 環氧化合物(B) 合計量(質量%) 順丁烯二醯亞胺化合物(F) 酸酐 (H) 離子捕捉劑 (G) 導熱性 耐熱性 絕緣性 焊錫耐熱性 種類 種類 種類 含量(質量%) 種類 平均粒徑(μm) 含量(質量%) 種類 平均粒徑(μm) 含量(質量%) 種類 平均粒徑(μm) 含量(質量%) 種類 含量(質量%) 種類 含量(質量%) 種類 含量(質量%) 實施例25 A-2 B-3 13.9 C-1 0.1 BN-D 40 75 - - - 表面修飾AA-03F 0.25 5 15.0 - F-1 5 - - G-1 1 A + A A A 實施例26 A-2 B-3 13.9 C-1 0.1 BN-E 40 75 - - - 表面修飾AA-03F 0.25 5 15.0 - F-1 5 - - G-1 1 A + A A A 實施例27 A-2 B-3 13.9 C-1 0.1 BN-A 40 75 - - - 表面修飾AA-03F 0.25 5 15.0 - - - H-1 5 G-1 1 A + B A A 實施例28 A-2 B-3 13.9 C-1 0.1 BN-B 40 75 - - - 表面修飾AA-03F 0.25 5 15.0 - - - H-1 5 G-1 1 A + B A A 實施例29 A-2 B-3 13.9 C-1 0.1 BN-C 40 75 - - - 表面修飾AA-03F 0.25 5 15.0 - - - H-1 5 G-1 1 A + B A A 實施例30 A-2 B-3 13.9 C-1 0.1 BN-D 40 75 - - - 表面修飾AA-03F 0.25 5 15.0 - - - H-1 5 G-1 1 A + B A A 實施例31 A-2 B-3 13.9 C-1 0.1 BN-E 40 75 - - - 表面修飾AA-03F 0.25 5 15.0 - - - H-1 5 G-1 1 A + B A A 實施例32 A-2 B-3 8.9 C-1 0.1 BN-A 40 75 - - - 表面修飾AA-03F 0.25 5 15.0 - F-1 5 H-1 5 G-1 1 A + A A A 實施例33 A-2 B-3 8.9 C-1 0.1 BN-B 40 75 - - - 表面修飾AA-03F 0.25 5 15.0 - F-1 5 H-1 5 G-1 1 A + A A A 實施例34 A-2 B-3 8.9 C-1 0.1 BN-C 40 75 - - - 表面修飾AA-03F 0.25 5 15.0 - F-1 5 H-1 5 G-1 1 A + A A A 實施例35 A-2 B-3 8.9 C-1 0.1 BN-D 40 75 - - - 表面修飾AA-03F 0.25 5 15.0 - F-1 5 H-1 5 G-1 1 A + A A A 實施例36 A-2 B-3 8.9 C-1 0.1 BN-E 40 75 - - - 表面修飾AA-03F 0.25 5 15.0 - F-1 5 H-1 5 G-1 1 A + A A A 實施例37 A-2 B-3 13.9 C-1 0.1 BN-A 40 68 - - - 表面修飾AA-03F 0.25 12 5.7 - - - H-1 5 G-1 1 A + B A A 實施例38 A-2 B-3 13.9 C-1 0.1 BN-A 40 68 表面修飾AA-3 3 4 表面修飾AA-03F 0.25 8 8.5 5.7 - - H-1 5 G-1 1 A + B A A 實施例39 A-2 B-3 13.9 C-1 0.1 BN-A 40 68 表面修飾AA-3 3 6 表面修飾AA-03F 0.25 6 11.3 5.7 - - H-1 5 G-1 1 A + B A A 實施例40 A-2 B-3 13.9 C-1 0.1 BN-A 40 68 表面修飾AA-3 3 8 表面修飾AA-03F 0.25 4 17.0 5.7 - - H-1 5 G-1 1 A + B A A 實施例41 A-2 B-3 13.9 C-1 0.1 BN-A 40 68 表面修飾AA-3 3 9 表面修飾AA-03F 0.25 3 22.7 5.7 - - H-1 5 G-1 1 A + B A A 實施例42 A-2 B-3 13.9 C-1 0.1 BN-B 40 68 -    - 表面修飾AA-03F 0.25 12 5.7 - - - H-1 5 G-1 1 A + B A A 實施例43 A-2 B-3 13.9 C-1 0.1 BN-B 40 68 表面修飾AA-3 3 4 表面修飾AA-03F 0.25 8 8.5 5.7 - - H-1 5 G-1 1 A + B A A 實施例44 A-2 B-3 13.9 C-1 0.1 BN-B 40 68 表面修飾AA-3 3 6 表面修飾AA-03F 0.25 6 11.3 5.7 - - H-1 5 G-1 1 A + B A A 實施例45 A-2 B-3 13.9 C-1 0.1 BN-B 40 68 表面修飾AA-3 3 8 表面修飾AA-03F 0.25 4 17.0 5.7 - - H-1 5 G-1 1 A + B A A 實施例46 A-2 B-3 13.9 C-1 0.1 BN-B 40 68 表面修飾AA-3 3 9 表面修飾AA-03F 0.25 3 22.7 5.7 - - H-1 5 G-1 1 A + B A A 實施例47 A-2 B-3 13.9 C-1 0.1 BN-C 40 68 - - - 表面修飾AA-03F 0.25 12 5.7 - - - H-1 5 G-1 1 A + B A A 實施例48 A-2 B-3 13.9 C-1 0.1 BN-C 40 68 表面修飾AA-3 3 4 表面修飾AA-03F 0.25 8 8.5 5.7 - - H-1 5 G-1 1 A + B A A [Table 2] hardening composition Evaluation Phenolic Compounds and Epoxy Compounds Hardening Accelerator (C) Condensed boron nitride (D) Inorganic Y (I) Inorganic X (E) (D) /(E) (D) /(E+I) additive Phenolic compounds (A) Epoxy compound (B) Total amount (mass%) Maleimide compound (F) Anhydride (H) Ion Scavenger (G) thermal conductivity heat resistance insulation Solder heat resistance type type type Content (mass%) type Average particle size (μm) Content (mass%) type Average particle size (μm) Content (mass%) type Average particle size (μm) Content (mass%) type Content (mass%) type Content (mass%) type Content (mass%) Example 25 A-2 B-3 13.9 C-1 0.1 BN-D 40 75 - - - Surface modification AA-03F 0.25 5 15.0 - F-1 5 - - G-1 1 A + A A A Example 26 A-2 B-3 13.9 C-1 0.1 BN-E 40 75 - - - Surface modification AA-03F 0.25 5 15.0 - F-1 5 - - G-1 1 A + A A A Example 27 A-2 B-3 13.9 C-1 0.1 BN-A 40 75 - - - Surface modification AA-03F 0.25 5 15.0 - - - H-1 5 G-1 1 A + B A A Example 28 A-2 B-3 13.9 C-1 0.1 BN-B 40 75 - - - Surface modification AA-03F 0.25 5 15.0 - - - H-1 5 G-1 1 A + B A A Example 29 A-2 B-3 13.9 C-1 0.1 BN-C 40 75 - - - Surface modification AA-03F 0.25 5 15.0 - - - H-1 5 G-1 1 A + B A A Example 30 A-2 B-3 13.9 C-1 0.1 BN-D 40 75 - - - Surface modification AA-03F 0.25 5 15.0 - - - H-1 5 G-1 1 A + B A A Example 31 A-2 B-3 13.9 C-1 0.1 BN-E 40 75 - - - Surface modification AA-03F 0.25 5 15.0 - - - H-1 5 G-1 1 A + B A A Example 32 A-2 B-3 8.9 C-1 0.1 BN-A 40 75 - - - Surface modification AA-03F 0.25 5 15.0 - F-1 5 H-1 5 G-1 1 A + A A A Example 33 A-2 B-3 8.9 C-1 0.1 BN-B 40 75 - - - Surface modification AA-03F 0.25 5 15.0 - F-1 5 H-1 5 G-1 1 A + A A A Example 34 A-2 B-3 8.9 C-1 0.1 BN-C 40 75 - - - Surface modification AA-03F 0.25 5 15.0 - F-1 5 H-1 5 G-1 1 A + A A A Example 35 A-2 B-3 8.9 C-1 0.1 BN-D 40 75 - - - Surface modification AA-03F 0.25 5 15.0 - F-1 5 H-1 5 G-1 1 A + A A A Example 36 A-2 B-3 8.9 C-1 0.1 BN-E 40 75 - - - Surface modification AA-03F 0.25 5 15.0 - F-1 5 H-1 5 G-1 1 A + A A A Example 37 A-2 B-3 13.9 C-1 0.1 BN-A 40 68 - - - Surface modification AA-03F 0.25 12 5.7 - - - H-1 5 G-1 1 A + B A A Example 38 A-2 B-3 13.9 C-1 0.1 BN-A 40 68 Surface modification AA-3 3 4 Surface modification AA-03F 0.25 8 8.5 5.7 - - H-1 5 G-1 1 A + B A A Example 39 A-2 B-3 13.9 C-1 0.1 BN-A 40 68 Surface modification AA-3 3 6 Surface modification AA-03F 0.25 6 11.3 5.7 - - H-1 5 G-1 1 A + B A A Example 40 A-2 B-3 13.9 C-1 0.1 BN-A 40 68 Surface modification AA-3 3 8 Surface modification AA-03F 0.25 4 17.0 5.7 - - H-1 5 G-1 1 A + B A A Example 41 A-2 B-3 13.9 C-1 0.1 BN-A 40 68 Surface modification AA-3 3 9 Surface modification AA-03F 0.25 3 22.7 5.7 - - H-1 5 G-1 1 A + B A A Example 42 A-2 B-3 13.9 C-1 0.1 BN-B 40 68 - - Surface modification AA-03F 0.25 12 5.7 - - - H-1 5 G-1 1 A + B A A Example 43 A-2 B-3 13.9 C-1 0.1 BN-B 40 68 Surface modification AA-3 3 4 Surface modification AA-03F 0.25 8 8.5 5.7 - - H-1 5 G-1 1 A + B A A Example 44 A-2 B-3 13.9 C-1 0.1 BN-B 40 68 Surface modification AA-3 3 6 Surface modification AA-03F 0.25 6 11.3 5.7 - - H-1 5 G-1 1 A + B A A Example 45 A-2 B-3 13.9 C-1 0.1 BN-B 40 68 Surface modification AA-3 3 8 Surface modification AA-03F 0.25 4 17.0 5.7 - - H-1 5 G-1 1 A + B A A Example 46 A-2 B-3 13.9 C-1 0.1 BN-B 40 68 Surface modification AA-3 3 9 Surface modification AA-03F 0.25 3 22.7 5.7 - - H-1 5 G-1 1 A + B A A Example 47 A-2 B-3 13.9 C-1 0.1 BN-C 40 68 - - - Surface modification AA-03F 0.25 12 5.7 - - - H-1 5 G-1 1 A + B A A Example 48 A-2 B-3 13.9 C-1 0.1 BN-C 40 68 Surface modification AA-3 3 4 Surface modification AA-03F 0.25 8 8.5 5.7 - - H-1 5 G-1 1 A + B A A

[表3]    硬化性組成物 評價 酚化合物和環氧化合物 硬化促進劑(C) 凝聚狀氮化硼 (D) 無機物Y (I) 無機物X (E) (D) /(E) (D) /(E+I) 添加劑 酚化合物(A) 環氧化合物(B) 合計量(質量%) 順丁烯二醯亞胺化合物(F) 酸酐 (H) 離子捕捉劑 (G) 導熱性 耐熱性 絕緣性 焊錫耐熱性 種類 種類 種類 含量(質量%) 種類 平均粒徑(μm) 含量(質量%) 種類 平均粒徑(μm) 含量(質量%) 種類 平均粒徑(μm) 含量(質量%) 種類 含量(質量%) 種類 含量(質量%) 種類 含量(質量%) 實施例49 A-2 B-3 13.9 C-1 0.1 BN-C 40 68 表面修飾AA-3 3 6 表面修飾AA-03F 0.25 6 11.3 5.7 - - H-1 5 G-1 1 A + B A A 實施例50 A-2 B-3 13.9 C-1 0.1 BN-C 40 68 表面修飾AA-3 3 8 表面修飾AA-03F 0.25 4 17.0 5.7 - - H-1 5 G-1 1 A + B A A 實施例51 A-2 B-3 13.9 C-1 0.1 BN-C 40 68 表面修飾AA-3 3 9 表面修飾AA-03F 0.25 3 22.7 5.7 - - H-1 5 G-1 1 A + B A A 實施例52 A-2 B-3 13.9 C-1 0.1 BN-D 40 68 - - - 表面修飾AA-03F 0.25 12 5.7 - - - H-1 5 G-1 1 A + B A A 實施例53 A-2 B-3 13.9 C-1 0.1 BN-D 40 68 表面修飾AA-3 3 4 表面修飾AA-03F 0.25 8 8.5 5.7 - - H-1 5 G-1 1 A + B A A 實施例54 A-2 B-3 13.9 C-1 0.1 BN-D 40 68 表面修飾AA-3 3 6 表面修飾AA-03F 0.25 6 11.3 5.7 - - H-1 5 G-1 1 A + B A A 實施例55 A-2 B-3 13.9 C-1 0.1 BN-D 40 68 表面修飾AA-3 3 8 表面修飾AA-03F 0.25 4 17.0 5.7 - - H-1 5 G-1 1 A + B A A 實施例56 A-2 B-3 13.9 C-1 0.1 BN-D 40 68 表面修飾AA-3 3 9 表面修飾AA-03F 0.25 3 22.7 5.7 - - H-1 5 G-1 1 A + B A A 實施例57 A-2 B-3 13.9 C-1 0.1 BN-E 40 68 - - - 表面修飾AA-03F 0.25 12 5.7 - - - H-1 5 G-1 1 A + B A A 實施例58 A-2 B-3 13.9 C-1 0.1 BN-E 40 68 表面修飾AA-3 3 4 表面修飾AA-03F 0.25 8 8.5 5.7 - - H-1 5 G-1 1 A + B A A 實施例59 A-2 B-3 13.9 C-1 0.1 BN-E 40 68 表面修飾AA-3 3 6 表面修飾AA-03F 0.25 6 11.3 5.7 - - H-1 5 G-1 1 A + B A A 實施例60 A-2 B-3 13.9 C-1 0.1 BN-E 40 68 表面修飾AA-3 3 8 表面修飾AA-03F 0.25 4 17.0 5.7 - - H-1 5 G-1 1 A + B A A 實施例61 A-2 B-3 13.9 C-1 0.1 BN-E 40 68 表面修飾AA-3 3 9 表面修飾AA-03F 0.25 3 22.7 5.7 - - H-1 5 G-1 1 A + B A A 實施例62 A-2 B-3 13.9 C-1 0.1 BN-A 40 75 - - - QSG-100 0.11 5 15.0 - F-1 5 - - G-1 1 A + A A A 實施例63 A-2 B-3 13.9 C-1 0.1 BN-B 40 75 - - - QSG-100 0.11 5 15.0 - F-1 5 - - G-1 1 A + A A A 實施例64 A-2 B-3 13.9 C-1 0.1 BN-C 40 75 - - - QSG-100 0.11 5 15.0 - F-1 5 - - G-1 1 A + A A A 實施例65 A-2 B-3 13.9 C-1 0.1 BN-D 40 75 - - - QSG-100 0.11 5 15.0 - F-1 5 - - G-1 1 A + A A A 實施例66 A-2 B-3 13.9 C-1 0.1 BN-E 40 75 - - - QSG-100 0.11 5 15.0 - F-1 5 - - G-1 1 A + A A A 實施例67 A-2 B-3 13.9 C-1 0.1 BN-A 40 75 - - - QSG-100 0.015 5 15.0 - F-1 5 - - G-1 1 A + A A A 實施例68 A-2 B-3 13.9 C-1 0.1 BN-B 40 75 - - - QSG-10 0.015 5 15.0 - F-1 5 - - G-1 1 A + A A A 實施例69 A-2 B-3 13.9 C-1 0.1 BN-C 40 75 - - - QSG-10 0.015 5 15.0 - F-1 5 - - G-1 1 A + A A A 實施例70 A-2 B-3 13.9 C-1 0.1 BN-D 40 75 - - - QSG-10 0.015 5 15.0 - F-1 5 - - G-1 1 A + A A A 實施例71 A-2 B-3 13.9 C-1 0.1 BN-E 40 75 - - - QSG-10 0.015 5 15.0 - F-1 5 - - G-1 1 A + A A A 比較例1 A-1 B-9 19.9 C-4 0.1 HP-40 40 80 - - - - - - - - - - - - - - D C C C 比較例2 A-1 B-9 19.9 C-1 0.1 HP-40 40 75 AA-04 0.40 5 - - - - - - - - - - - D C C C [table 3] hardening composition Evaluation Phenolic Compounds and Epoxy Compounds Hardening Accelerator (C) Condensed boron nitride (D) Inorganic Y (I) Inorganic X (E) (D) /(E) (D) /(E+I) additive Phenolic compounds (A) Epoxy compound (B) Total amount (mass%) Maleimide compound (F) Anhydride (H) Ion Scavenger (G) thermal conductivity heat resistance insulation Solder heat resistance type type type Content (mass%) type Average particle size (μm) Content (mass%) type Average particle size (μm) Content (mass%) type Average particle size (μm) Content (mass%) type Content (mass%) type Content (mass%) type Content (mass%) Example 49 A-2 B-3 13.9 C-1 0.1 BN-C 40 68 Surface modification AA-3 3 6 Surface modification AA-03F 0.25 6 11.3 5.7 - - H-1 5 G-1 1 A + B A A Example 50 A-2 B-3 13.9 C-1 0.1 BN-C 40 68 Surface modification AA-3 3 8 Surface modification AA-03F 0.25 4 17.0 5.7 - - H-1 5 G-1 1 A + B A A Example 51 A-2 B-3 13.9 C-1 0.1 BN-C 40 68 Surface modification AA-3 3 9 Surface modification AA-03F 0.25 3 22.7 5.7 - - H-1 5 G-1 1 A + B A A Example 52 A-2 B-3 13.9 C-1 0.1 BN-D 40 68 - - - Surface modification AA-03F 0.25 12 5.7 - - - H-1 5 G-1 1 A + B A A Example 53 A-2 B-3 13.9 C-1 0.1 BN-D 40 68 Surface modification AA-3 3 4 Surface modification AA-03F 0.25 8 8.5 5.7 - - H-1 5 G-1 1 A + B A A Example 54 A-2 B-3 13.9 C-1 0.1 BN-D 40 68 Surface modification AA-3 3 6 Surface modification AA-03F 0.25 6 11.3 5.7 - - H-1 5 G-1 1 A + B A A Example 55 A-2 B-3 13.9 C-1 0.1 BN-D 40 68 Surface modification AA-3 3 8 Surface modification AA-03F 0.25 4 17.0 5.7 - - H-1 5 G-1 1 A + B A A Example 56 A-2 B-3 13.9 C-1 0.1 BN-D 40 68 Surface modification AA-3 3 9 Surface modification AA-03F 0.25 3 22.7 5.7 - - H-1 5 G-1 1 A + B A A Example 57 A-2 B-3 13.9 C-1 0.1 BN-E 40 68 - - - Surface modification AA-03F 0.25 12 5.7 - - - H-1 5 G-1 1 A + B A A Example 58 A-2 B-3 13.9 C-1 0.1 BN-E 40 68 Surface modification AA-3 3 4 Surface modification AA-03F 0.25 8 8.5 5.7 - - H-1 5 G-1 1 A + B A A Example 59 A-2 B-3 13.9 C-1 0.1 BN-E 40 68 Surface modification AA-3 3 6 Surface modification AA-03F 0.25 6 11.3 5.7 - - H-1 5 G-1 1 A + B A A Example 60 A-2 B-3 13.9 C-1 0.1 BN-E 40 68 Surface modification AA-3 3 8 Surface modification AA-03F 0.25 4 17.0 5.7 - - H-1 5 G-1 1 A + B A A Example 61 A-2 B-3 13.9 C-1 0.1 BN-E 40 68 Surface modification AA-3 3 9 Surface modification AA-03F 0.25 3 22.7 5.7 - - H-1 5 G-1 1 A + B A A Example 62 A-2 B-3 13.9 C-1 0.1 BN-A 40 75 - - - QSG-100 0.11 5 15.0 - F-1 5 - - G-1 1 A + A A A Example 63 A-2 B-3 13.9 C-1 0.1 BN-B 40 75 - - - QSG-100 0.11 5 15.0 - F-1 5 - - G-1 1 A + A A A Example 64 A-2 B-3 13.9 C-1 0.1 BN-C 40 75 - - - QSG-100 0.11 5 15.0 - F-1 5 - - G-1 1 A + A A A Example 65 A-2 B-3 13.9 C-1 0.1 BN-D 40 75 - - - QSG-100 0.11 5 15.0 - F-1 5 - - G-1 1 A + A A A Example 66 A-2 B-3 13.9 C-1 0.1 BN-E 40 75 - - - QSG-100 0.11 5 15.0 - F-1 5 - - G-1 1 A + A A A Example 67 A-2 B-3 13.9 C-1 0.1 BN-A 40 75 - - - QSG-100 0.015 5 15.0 - F-1 5 - - G-1 1 A + A A A Example 68 A-2 B-3 13.9 C-1 0.1 BN-B 40 75 - - - QSG-10 0.015 5 15.0 - F-1 5 - - G-1 1 A + A A A Example 69 A-2 B-3 13.9 C-1 0.1 BN-C 40 75 - - - QSG-10 0.015 5 15.0 - F-1 5 - - G-1 1 A + A A A Example 70 A-2 B-3 13.9 C-1 0.1 BN-D 40 75 - - - QSG-10 0.015 5 15.0 - F-1 5 - - G-1 1 A + A A A Example 71 A-2 B-3 13.9 C-1 0.1 BN-E 40 75 - - - QSG-10 0.015 5 15.0 - F-1 5 - - G-1 1 A + A A A Comparative example 1 A-1 B-9 19.9 C-4 0.1 HP-40 40 80 - - - - - - - - - - - - - - D. C C C Comparative example 2 A-1 B-9 19.9 C-1 0.1 HP-40 40 75 AA-04 0.40 5 - - - - - - - - - - - D. C C C

從表中所示之結果確認到,若使用本發明的組成物,則能夠實現本發明的效果。 確認到,在凝聚狀氮化硼的含量與無機物X的含量之質量比為5.0~25.0的情況下,本發明的效果更優異(實施例1~3及37~61的比較)。 確認到,在組成物進一步含有表面修飾劑且凝聚狀氮化硼與吸附於凝聚狀氮化硼的表面上之表面修飾劑一起構成表面修飾凝聚狀氮化硼之情況下,本發明的效果更優異(實施例22~26及實施例4的比較)。 確認到,在滿足酚化合物包含具有三𠯤骨架之酚化合物及環氧化合物包含具有三𠯤骨架之環氧化合物中的任一個要件之情況下,本發明的效果更優異(實施例4及實施例17的比較)。 確認到,在組成物進一步含有離子捕捉劑之情況下,絕緣性更優異(實施例4及6的比較)。 確認到,在組成物進一步含有順丁烯二醯亞胺化合物之情況下,Tg(耐熱性)更優異(實施例4及5的比較)。 From the results shown in the table, it was confirmed that the effect of the present invention can be achieved by using the composition of the present invention. It was confirmed that the effect of the present invention is more excellent when the mass ratio of the content of the aggregated boron nitride to the content of the inorganic substance X is 5.0 to 25.0 (comparison of Examples 1 to 3 and 37 to 61). It was confirmed that the effect of the present invention is more effective when the composition further contains a surface modifier and the aggregated boron nitride constitutes the surface-modified aggregated boron nitride together with the surface modifier adsorbed on the surface of the aggregated boron nitride. Excellent (comparison of Examples 22 to 26 and Example 4). It was confirmed that the effect of the present invention is more excellent when the phenolic compound contains a phenolic compound having a three-skeleton skeleton and the epoxy compound contains an epoxy compound having a three-skeleton skeleton is satisfied (Example 4 and Example 17 comparison). It was confirmed that when the composition further contained an ion-scavenging agent, the insulation was more excellent (comparison of Examples 4 and 6). It was confirmed that when the composition further contained a maleimide compound, Tg (heat resistance) was more excellent (comparison of Examples 4 and 5).

無。none.

Claims (12)

一種硬化性組成物,其含有酚化合物、環氧化合物、凝聚狀氮化硼及無機物X, 前述無機物X為選自包括氧化鋁及二氧化矽之群組中之至少1種, 前述凝聚狀氮化硼的平均粒徑為20μm以上, 前述無機物X的平均粒徑為0.30μm以下。 A curable composition containing phenolic compound, epoxy compound, condensed boron nitride and inorganic substance X, The aforementioned inorganic substance X is at least one selected from the group consisting of alumina and silicon dioxide, The average particle size of the agglomerated boron nitride is 20 μm or more, The average particle diameter of the above-mentioned inorganic substance X is 0.30 μm or less. 如請求項1所述之硬化性組成物,其中 前述無機物X的平均粒徑為0.25μm以下。 The curable composition as described in Claim 1, wherein The average particle diameter of the above-mentioned inorganic substance X is 0.25 μm or less. 如請求項1或請求項2所述之硬化性組成物,其中 前述凝聚狀氮化硼的含量與前述無機物X的含量之質量比為5.0~25.0。 The curable composition as described in Claim 1 or Claim 2, wherein The mass ratio of the content of the aforementioned aggregated boron nitride to the content of the aforementioned inorganic substance X is 5.0-25.0. 如請求項1或請求項2所述之硬化性組成物,其進一步含有表面修飾劑, 前述凝聚狀氮化硼與吸附於前述凝聚狀氮化硼的表面上之前述表面修飾劑一起構成表面修飾凝聚狀氮化硼。 The curable composition according to claim 1 or claim 2, which further contains a surface modifier, The condensed boron nitride and the surface modifier adsorbed on the surface of the condensed boron nitride constitute surface-modified condensed boron nitride. 如請求項1或請求項2所述之硬化性組成物,其滿足前述酚化合物包含具有三𠯤骨架之酚化合物及前述環氧化合物包含具有三𠯤骨架之環氧化合物中的至少一個要件。The curable composition according to claim 1 or claim 2, which satisfies at least one of the requirements that the phenol compound includes a phenol compound having a three-skeleton skeleton and the epoxy compound includes an epoxy compound having a three-skeleton skeleton. 如請求項1或請求項2所述之硬化性組成物,其進一步含有硬化促進劑。The curable composition according to Claim 1 or Claim 2, further comprising a curing accelerator. 如請求項6所述之硬化性組成物,其中 前述硬化促進劑含有具有磷原子之化合物。 The curable composition as described in Claim 6, wherein The aforementioned hardening accelerator contains a compound having a phosphorus atom. 如請求項1或請求項2所述之硬化性組成物,其進一步含有離子捕捉劑。The curable composition according to Claim 1 or Claim 2, further comprising an ion-scavenging agent. 如請求項1或請求項2所述之硬化性組成物,其進一步含有順丁烯二醯亞胺化合物。The curable composition according to Claim 1 or Claim 2, further comprising a maleimide compound. 一種導熱材料,其藉由硬化請求項1至請求項9之任一項所述之硬化性組成物而獲得。A thermally conductive material obtained by curing the curable composition described in any one of claim 1 to claim 9. 一種導熱片,其由請求項10所述之導熱材料構成。A thermally conductive sheet made of the thermally conductive material described in Claim 10. 一種附導熱層的器件,其具有:器件;及配置於前述器件上之包含請求項10所述之導熱材料之導熱層。A device with a heat-conducting layer, comprising: a device; and a heat-conducting layer comprising the heat-conducting material described in Claim 10 disposed on the aforementioned device.
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