TW202235688A - Plating device and plating method aiming at improving the uniformity of thickness of the plating film formed on the substrate - Google Patents

Abstract

The present invention aims at improving the uniformity of thickness of the plating film formed on the substrate. The plating module 400 of the present invention comprises: a plating tank 410 for containing a plating solution; a substrate holder 440 for holding the substrate Wf; an anode 430 received in the plating tank 410; an anode mask 460 having an opening 466 formed in the center and disposed between the substrate Wf held in the substrate holder 440 and the anode 430; and a resistor body 450 formed with a plurality of holes and disposed between the substrate Wf held in the substrate holder 440 and the anode mask 460 and spaced apart from the anode mask 460 at an interval.

Description

Plating device and plating method

This application relates to a plating device and a plating method.

As an example of a plating device, a cup-type electrolytic plating device is known. The cup-type electrolytic plating device is to immerse the substrate (such as a semiconductor wafer) held in the substrate holder with the surface to be plated facing downward in the plating solution, and by applying a voltage between the substrate and the anode, the surface of the substrate A conductive film is deposited.

For example, Patent Document 1 discloses that in a cup-type electrolytic plating apparatus, a ring-shaped frame (Shield) with an opening formed in the center is arranged between a substrate and an anode. In addition, Patent Document 1 discloses that the thickness of the plating film formed on the substrate can be made uniform by adjusting the size of the opening of the frame and adjusting the distance between the frame and the substrate. [Prior Art Literature] [Patent Document]

[Patent Document 1] US Patent No. 6,402,923

(Problem to be solved by the invention)

However, there is still room for improvement in the prior art in terms of improving the uniformity of the thickness of the plated film formed on the substrate.

That is, in the prior art, the thickness of the plating film formed on the substrate is uniformed by adjusting the size of the opening of the frame or adjusting the distance between the frame and the substrate. However, it is often difficult to sufficiently uniform the thickness of the plating film on the outer edge of the substrate only by adjusting the size of the opening of the frame or the like. Therefore, there is an urgent need for a technique for uniformizing the plating film thickness of the entire substrate including the outer edge of the substrate.

Therefore, one object of the present application is to improve the uniformity of the thickness of the plated film formed on the substrate. (a means of solving a problem)

One embodiment discloses a plating device, which includes: a plating tank, which is used to accommodate a plating solution; a substrate holder, which is used to hold a substrate; an anode, which is accommodated in the aforementioned plating tank; a cover disposed between the substrate held by the substrate holder and the anode and having an opening formed in the center; and a resistor disposed between the substrate held by the substrate holder and the anode mask, It is arranged at intervals from the anode shield, and a plurality of holes are formed therein.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the drawings described below, the same symbols are assigned to the same or corresponding components, and repeated descriptions are omitted. ＜Overall configuration of the coating equipment＞

Fig. 1 is a perspective view showing the overall configuration of a coating device according to this embodiment. Fig. 2 is a plan view showing the overall configuration of the coating device of the present embodiment. As shown in Figures 1 and 2, the plating device 1000 has: a loading port 100, a transfer robot 110, an aligner 120, a pre-wet module 200, a pre-soak module 300, a plating module 400, a cleaning module 500, Spin washing and drying machine 600 , conveying device 700 , and control module 800 .

The loading port 100 is used to load substrates stored in cassettes such as FOUPs (Front Opening Pods) not shown in the plating apparatus 1000 , or a module for unloading substrates from the plating apparatus 1000 to cassettes. In this embodiment, four loading ports 100 are arranged horizontally, but the number and arrangement of the loading ports 100 are not limited. The transfer robot 110 is a robot for transferring substrates, and is configured to transfer substrates between the load port 100 , the aligner 120 , and the transfer device 700 . When the transfer robot 110 and the transfer device 700 transfer the substrate between the transfer robot 110 and the transfer device 700 , the transfer of the substrate can be performed via a temporary stand (not shown).

The aligner 120 is a module for aligning the positions of the orientation planes or grooves of the substrate in a specified direction. In this embodiment, two aligners 120 are arranged horizontally, but the number and arrangement of the aligners 120 are not limited. The pre-wetting module 200 replaces the air inside the pattern formed on the surface of the substrate with the treatment solution by wetting the surface of the substrate to be plated before the plating treatment with a treatment solution such as pure water or degassed water. The pre-wetting module 200 is configured to perform a pre-wetting treatment that easily supplies the plating solution inside the pattern by replacing the treatment solution inside the pattern with the plating solution during plating. In this embodiment, two pre-humidity modules 200 are arranged vertically, but the number and arrangement of the pre-humidity modules 200 are not limited.

The prepreg module 300 is used to etch and remove the oxide film with high resistance formed on the surface of the seed layer of the plated surface of the substrate before the plating process, for example, by etching with sulfuric acid or hydrochloric acid to clean the surface of the plated substrate. Or the way of pre-soaking to make it activated. In this embodiment, two prepreg modules 300 are arranged vertically, but the number and arrangement of prepreg modules 300 are not limited. The plating module 400 performs plating treatment on the substrate. In this embodiment, there are two sets of 12 plating modules 400 arranged with 3 sets in the vertical direction and 4 sets in the horizontal direction. There are 24 sets of plating modules 400 in total. The quantity and configuration are not limited.

The cleaning module 500 is configured to perform cleaning processing on the substrate in order to remove the plating solution and the like remaining on the substrate after the plating processing. In this embodiment, two cleaning modules 500 are arranged vertically, but the number and arrangement of the cleaning modules 500 are not limited. The spin rinse dryer 600 is a module for drying the cleaned substrate by rotating it at high speed. In this embodiment, two spin rinsing and drying machines are arranged vertically, but the number and arrangement of the spin rinsing and drying machines are not limited. The transfer device 700 is a device for transferring substrates between a plurality of modules in the plating device 1000 . The control module 800 is configured to control a plurality of modules of the coating device 1000, and can be configured, for example, by a general computer or a dedicated computer having an input/output interface with an operator.

An example of a series of plating processes performed by the plating apparatus 1000 will be described below. First, the substrate stored in the cassette is loaded into the loading port 100 . Continuing, the transfer robot 110 takes out the substrate from the cassette of the loading port 100 and transfers the substrate to the aligner 120 . The aligner 120 aligns the positions of the orientation planes or grooves of the substrate in a specified direction. The transfer robot 110 transfers the substrate aligned with the direction by the aligner 120 to the transfer device 700 .

The transfer device 700 transfers the substrate received from the transfer robot 110 to the pre-humidity module 200 . The pre-wet module 200 performs pre-wet treatment on the substrate. The transfer device 700 transfers the pre-wetted substrate to the prepreg module 300 . The prepreg module 300 performs prepreg treatment on the substrate. The transport device 700 transports the prepreg-processed substrate to the plating module 400 . The plating module 400 performs plating treatment on the substrate.

The transfer device 700 transfers the plated substrate to the cleaning module 500 . The cleaning module 500 cleans the substrate. The transfer device 700 transfers the cleaned substrate to the spin rinse dryer 600 . The spin rinse dryer 600 dries the substrate. The transfer device 700 transfers the dried substrate to the transfer robot 110 . The transfer robot 110 transfers the substrate received from the transfer device 700 to the cassette of the load port 100 . Finally, the cassette containing the substrate is carried out from the loading port 100 . ＜Composition of Plating Module＞

Next, the configuration of the coating module 400 will be described. Since the 24 plating modules 400 in this embodiment have the same configuration, only one plating module 400 will be described. In addition, this embodiment is an example of a cup-type plating module that immerses the substrate with the surface to be plated facing downward in the plating solution to perform plating treatment, but the plating module is not limited to the cup type. . For example, the plating module can also be configured to perform plating treatment on substrates whose surfaces to be plated face any direction, such as laterally or upwardly. Fig. 3 is a longitudinal cross-sectional view schematically showing the composition of a coating module 400 according to an embodiment. As shown in FIG. 3 , the plating module 400 has a plating tank 410 for containing the plating solution. The plating module 400 includes a diaphragm 420 that partitions the inside of the plating tank 410 in the vertical direction. The diaphragm 420 is formed of, for example, an elastic film. The inside of the plating tank 410 is divided into a cathode region 422 where the substrate Wf is immersed and an anode region 424 where the anode is arranged, by a diaphragm 420 . Plating solutions are respectively filled in the cathode region 422 and the anode region 424 . The coating module 400 includes an anode 430 disposed on the bottom surface of the coating tank 410 in the anode region 424 .

The plating module 400 includes a substrate holder 440 for holding the substrate Wf with the surface to be plated Wf-a directed downward. The substrate holder 440 has feed contacts for feeding the substrate Wf from a power source not shown. In one embodiment, the feed contact is in contact with the outer edge of the substrate Wf, and can feed power to the outer edge of the substrate Wf. The plating module 400 includes a distance adjustment mechanism 442 for adjusting the distance between the substrate holder 440 and a resistor 450 described later. The distance adjustment mechanism 442 of this embodiment is realized by a holder elevating mechanism that raises and lowers the substrate holder 440 in order to adjust the position of the substrate holder 440 relative to the resistor 450 . The distance adjustment mechanism (holder elevating mechanism) 442 can be realized by known mechanisms such as motors, for example. The plating module 400 uses the distance adjustment mechanism (holder lifting mechanism) 442 to immerse the substrate Wf in the plating solution of the cathode area 422, and applies a voltage between the anode 430 and the substrate Wf to control the substrate Wf. The plated surface Wf-a is configured to be plated. In addition, the distance adjustment mechanism 442 is not limited to a configuration in which the substrate holder 440 is raised and lowered by a holder elevating mechanism to adjust the distance between the substrate holder 440 and the resistor 450 . For example, the distance adjusting mechanism 442 may be provided with a resistor body raising and lowering mechanism for adjusting the position of the resistor body 450 with respect to the substrate holder 440 instead of the holder raising and lowering mechanism. In addition, the distance adjusting mechanism 442 may also include both a holder lifting mechanism and a resistor lifting mechanism.

The coating module 400 includes a rotation mechanism 446 for rotating the substrate holder 440 so that the substrate Wf rotates around a virtual rotation axis extending vertically from the center of the surface to be coated Wf-a. The rotation mechanism 446 can be realized by known mechanisms such as motors, for example.

The coating module 400 includes a sensor 470 capable of measuring the coating film thickness distribution or the current density distribution along the radial direction of the surface Wf-a of the substrate Wf. Fig. 4 is a diagram schematically showing the thickness distribution of the coating film measured by the sensor. As shown in Figure 4, the sensor 470 of one embodiment is to measure a plurality of monitoring points scattered in the radial direction from the central part Ct of the substrate Wf toward the outer edge part Eg (one embodiment is n monitoring points) The thickness of the coating film or the way of current density is formed. The sensor 470 uses optical, electric field, magnetic field, potential and other methods to obtain information such as coating film thickness or current density at multiple monitoring points at certain time intervals during the coating process. The coating module 400 is configured to obtain the coating thickness distribution Th-1 of the coating surface Wf-a of the substrate Wf in the radial direction based on the information obtained by the sensor 470 . In addition, in one embodiment, the sensor 470 is arranged on the resistor 450 described later, but the arrangement position of the sensor 470 is not limited.

As shown in FIG. 3 , the plating module 400 includes an anode mask 460 disposed between the substrate Wf held by the substrate holder 440 and the anode 430 . The anode shield 460 is disposed near the anode 430 in the anode region 424 . The anode shield 460 is a ring-shaped electric field shield with an opening 466 formed in the center.

Figure 5 is a schematic top view showing the anode shield. As shown in FIGS. 3 and 5 , the anode cover 460 has: an annular first anode cover 462 fixed to the inner wall of the plating tank 410; A plurality of second anode shields 464 . In one embodiment, the second anode shield 464 is constituted including eight second anode shields 464 - 1 to 464 - 8 , but the number of the second anode shield 464 is not limited. The plurality of second anode shields 464 are respectively configured to be movable along the radial direction of the first anode shield 462 .

The anode shield 460 can reduce the diameter of the opening 466 of the anode shield 460 by moving the plurality of second anode shields 464 to the inside in the radial direction of the first anode shield 462 . In addition, the anode shield 460 can enlarge the diameter of the opening 466 of the anode shield 460 by moving the plurality of second anode shields 464 to the outside in the radial direction of the first anode shield 462 . Anode shield 460 essentially acts to vary the diameter of anode 430 by varying the diameter of opening 466 . As a result, the anode shield 460 acts to change the overall film thickness distribution from the center to the outer edge of the substrate Wf by changing the diameter of the opening 466 . This is explained below.

Fig. 6 is a schematic diagram showing the distribution of the plating film thickness when the diameter of the opening of the anode shield is changed. In FIG. 6 , the vertical axis represents the plating film thickness, and the horizontal axis represents the radial position of the surface Wf-a to be plated of the substrate Wf from the central portion Ct to the outer edge portion Eg. In FIG. 6 , the plating film thickness distributions Th-11 to Th-17 sequentially show the plating film thickness distribution when the diameter of the opening 466 of the anode shield 460 is enlarged.

As shown in FIG. 6 , when the diameter of the opening 466 of the anode shield 460 is changed, the plating film thickness from the central portion Ct to the outer edge portion Eg of the substrate Wf changes. Specifically, when the diameter of the opening 466 of the anode shield 460 is small, since the electric field is concentrated near the central part Ct of the substrate Wf, for example, the plating film thickness distribution Th-11, the plating film thickness of the central part Ct of the substrate Wf thicker, the thickness of the plating film on the outer edge portion Eg of the substrate Wf becomes thinner. In addition, when the diameter of the opening 466 of the anode shield 460 is large, since the electric field is concentrated on the outer edge part Eg of the substrate Wf, for example, the plating film thickness distribution Th-17, the plating film thickness of the central part Ct of the substrate Wf becomes thinner. , and the plating film thickness of the outer edge portion Eg of the substrate Wf becomes thicker. The example in Fig. 6 is that the thickness distribution of the coating film is the most uniform when Th-14, but even so, since the distribution of the coating film thickness near the outer edge Eg of the substrate Wf is still somewhat uneven, it is required The thickness of the plated film near the outer edge portion Eg of the substrate Wf becomes uniform.

Regarding this point, as shown in FIG. 3 , a plating module 400 according to one embodiment is provided with a resistor arranged at a distance from the anode mask 460 between the substrate Wf held by the substrate holder 440 and the anode mask 460. Body 450. The resistor 450 is disposed in the cathode region 422 . One embodiment of the resistor 450 is constituted by a plate member (punched plate) formed with a plurality of through holes 452 penetrating the anode region 424 and the cathode region 422 . However, the shape of the resistor 450 is not limited. In addition, the resistor 450 is not limited to a punched plate, and may be formed of a porous body in which many pores are formed in a ceramic material, for example.

The resistor 450 functions as a resistor between the anode 430 and the substrate Wf. The resistor 450 has, for example, a resistivity of 1Ω‧m or more, preferably 3Ω‧m or more, but it is not limited thereto, and the resistivity of the resistor 450 is not limited. By arranging the resistor 450, since the resistance value between the anode 430 and the substrate Wf increases, the electric field is less likely to expand, and as a result, the distribution of the thickness of the plating film formed on the surface to be plated Wf-a of the substrate Wf can be made uniform.

In particular, the resistor 450 affects the thickness distribution of the plating film on the outer edge of the plated surface Wf-a of the substrate Wf. That is, the distance adjustment mechanism 442 is configured to adjust the distance between the substrate holder 440 and the resistor 450 according to the plating film thickness distribution or the current density distribution measured by the sensor 470 . Specifically, the distance adjustment mechanism (holder elevating mechanism) 442 is configured to elevate the substrate holder 440 based on the plating film thickness distribution or current density distribution measured by the sensor 470 . By raising and lowering the substrate holder 440, the distance between the substrate Wf and the resistor 450 changes.

FIG. 7 is a diagram schematically showing the distribution of plating film thickness when the distance between the substrate and the resistor is changed. In FIG. 7 , the vertical axis represents the plating film thickness, and the horizontal axis represents the radial position of the surface Wf-a to be plated of the substrate Wf from the central portion Ct to the outer edge portion Eg. In FIG. 7 , the plated film thickness distributions Th-21, Th-22, and Th-23 sequentially show the plated film thickness distributions when the distance between the substrate Wf and the resistor 450 is increased. As shown in FIG. 7 , when the distance between the substrate Wf and the resistor 450 is changed, the thickness of the plated film near the outer edge Eg of the substrate Wf greatly changes. Hereinafter, this point will be explained.

Fig. 8 is a diagram schematically showing the thickness distribution of the plating film on the outer edge of the substrate when the distance between the substrate and the resistor is changed. FIG. 8(A) shows the plated film thickness distribution when the distance between the substrate Wf and the resistor 450 is made closer, and FIG. 8(B) shows the plated film thickness distribution when the distance between the substrate Wf and the resistor 450 is made farther away. As shown in FIG. 8 , when the distance between the substrate Wf and the resistor 450 is increased, the space for expanding the electric field becomes larger. Since the feed contact of the substrate holder 440 is in contact with the outer edge of the substrate Wf, the electric field is relatively concentrated on the outer edge of the substrate Wf, and the plating film thickness of the outer edge becomes thicker.

The plating module 400 utilizes this property to adjust the thickness of the plating film on the outer edge of the substrate Wf through the distance adjustment mechanism 442 . For example, when the thickness distribution of the plating film on the outer edge of the substrate Wf is uneven like the thickness distribution Th-24 of the plating film, the distance adjustment mechanism (holder elevating mechanism) 442 reduces the distance between the substrate Wf and the resistor 450 (The substrate holder 440 is lowered), and the uniform plating film thickness distribution such as the plating film thickness distribution Th-25 can be adjusted. In addition, for example, when the thickness distribution of the plating film on the outer edge of the substrate Wf is uneven such as the thickness distribution Th-26 of the plating film, the distance adjustment mechanism (holder elevating mechanism) 442 increases the distance between the substrate Wf and the resistor 450 The distance between (to raise the substrate holder 440) can be adjusted to a uniform plating film thickness distribution such as the plating film thickness distribution Th-27. In addition, what kind of plating film thickness distribution becomes depends on the size of the opening 466 of the anode shield 460, the type of plating solution, and the current density on the surface to be plated Wf-a.

As described above, the plating module 400 of one embodiment includes both the anode shield 460 and the resistor 450 . Therefore, the plating module 400 can utilize the characteristics of the anode mask 460 and the resistor 450 to improve the uniformity of the thickness distribution of the plating film on the entire substrate Wf. For example, during the plating process of the substrate Wf, the plating module 400 uses the sensor 470 to measure the plating film thickness distribution or current density distribution along the radial direction of the plated surface Wf-a of the substrate Wf.

Next, the coating module 400 adjusts the diameter of the opening 466 of the anode cover 460 according to the coating thickness distribution or current density distribution measured by the sensor 470 . Specifically, the plated film between the central portion Ct of the surface to be plated Wf-a shown in FIG. The diameter of the opening 466 of the anode cover 460 is adjusted in such a way that the thickness or the difference in current density becomes smaller. Thereby, the uniformity of the plating film thickness between the center part Ct and the midpoint Md of the surface Wf-a to be plated of the board|substrate Wf improves.

In addition, the coating module 400 adjusts the distance between the substrate Wf and the resistor 450 by raising and lowering the substrate holder 440 according to the coating thickness distribution or current density distribution measured by the sensor 470 . Specifically, the coating film between the midpoint Md between the central part Ct and the outer edge Eg of the surface to be plated Wf-a shown in FIG. 7 and the outer edge Eg of the surface to be plated Wf-a The substrate holder 440 is raised and lowered in such a way that the thickness or the difference in current density becomes smaller. Thereby, the uniformity of the plating film thickness between the midpoint Md of the surface to be plated Wf-a of the substrate Wf and the outer edge portion Eg is improved.

As described above, the coating module 400 adjusts the diameter of the opening 466 of the anode cover 460 while performing the coating process, and adjusts the distance between the substrate Wf and the resistor 450, so that the surface Wf to be coated of the substrate Wf can be − The uniformity of the coating film thickness distribution of a is improved. In addition, one embodiment shows an example in which the diameter of the opening 466 of the anode shield 460 is adjusted while the plating process is performed, and the distance between the substrate Wf and the resistor 450 is adjusted, but the present invention is not limited thereto. For example, the diameter of the opening 466 of the anode shield 460 and the optimum value of the distance between the substrate Wf and the resistor 450 are obtained in advance, and when these are set to optimum values, the anode shield may not be adjusted during the plating process. The diameter of the opening 466 of the cover 460 and the lifting of the substrate holder 440.

Next, other embodiments of the plating module 400 will be described. Fig. 9 is a longitudinal sectional view schematically showing the composition of a coating module in one embodiment. The embodiment shown in FIG. 9 has the same configuration as the embodiment shown in FIG. 3 except that it includes paddles, a paddle stirring mechanism, and the like. Therefore, the description overlapping with the embodiment shown in FIG. 3 is omitted.

As shown in FIG. 9, the plating module 400 includes: a paddle 480 arranged between the substrate Wf held by the substrate holder 440 and the resistor 450; and a paddle for stirring the paddle 480 in the plating solution. Leaf stirring mechanism 482. The paddle stirring mechanism 482 is configured to stir the plating solution by reciprocating the paddle 480 parallel to the surface Wf-a to be plated of the substrate Wf.

Here, as in the above-mentioned embodiment, when the substrate holder 440 is raised and lowered (the height of the substrate holder 440 is changed) in order to change the distance between the substrate Wf and the resistor 450 during the plating process, the paddle 480 and the The distance between the substrates Wf also varies. Therefore, the stirring strength of the plating solution on the surface Wf-a to be plated of the substrate Wf also changes, which affects the uniformity of the thickness distribution of the plating film on the surface Wf-a to be plated. Hereinafter, this point will be explained.

FIG. 10 is a graph showing the flow velocity of the plating solution on the surface to be plated when the distance between the substrate and the resistor is changed. In FIG. 10 , the vertical axis represents the flow velocity of the plating solution on the surface to be plated Wf-a, and the horizontal axis represents the distance between the substrate Wf and the resistor 450 . As shown in FIG. 10, when the distance between the substrate Wf and the resistor 450 is changed by about 10%, the flow velocity of the plating solution on the surface to be plated Wf-a is changed by about 8%. When the flow velocity of the plating solution on the surface Wf-a to be plated changes, the uniformity of the thickness distribution of the plated film will be affected.

On the other hand, as shown in FIG. 9 , a coating module 400 according to one embodiment includes a paddle position adjustment mechanism 484 that moves up and down the paddle 480 in order to adjust the position of the paddle 480 . The paddle position adjustment mechanism 484 is to adjust the position of the paddle 480 (make it go up and down) synchronously with the adjustment of the position (lift up) of the substrate holder 440 by the distance adjustment mechanism (holder elevating mechanism) 442 during the plating process. way constituted. According to one embodiment, during the plating process, the distance between the paddle 480 and the substrate Wf can be kept constant by moving the paddle 480 up and down in synchronization with the up and down of the substrate holder 440 . As a result, according to the plating module 400 of one embodiment, even if the height of the substrate holder 440 is changed during the plating process, the flow velocity of the plating solution on the surface Wf-a to be plated can be kept constant, so that The uniformity of coating film thickness distribution is improved.

Next, other embodiments of the plating module 400 will be described. Fig. 11 is a longitudinal sectional view schematically showing the composition of a coating module in one embodiment. The embodiment shown in FIG. 11 has the same configuration as the embodiment shown in FIG. 3 except that it includes paddles, a paddle stirring mechanism, and the like. Therefore, the description overlapping with the embodiment shown in FIG. 3 is omitted.

As shown in FIG. 11 , the plating module 400 includes: a paddle 480 arranged between the substrate Wf held by the substrate holder 440 and the resistor 450; and a paddle for stirring the paddle 480 in the plating solution. Leaf stirring mechanism 482. The paddle stirring mechanism 482 is configured to stir the plating solution by reciprocating the paddle 480 parallel to the surface Wf-a to be plated of the substrate Wf.

As shown in FIG. 11 , the paddle 480 is fixed to the substrate holder 440 by the paddle support mechanism 486 . Therefore, the distance between the substrate Wf and the paddle 480 is constant because the paddle 480 is raised and lowered in conjunction with the up and down of the substrate holder 440 . As a result, according to the plating module 400 of one embodiment, even if the height of the substrate holder 440 is changed during the plating process, the flow rate of the plating solution on the surface Wf-a to be plated can be kept constant, so that the plating The uniformity of film thickness distribution is improved.

Next, other embodiments of the plating module 400 will be described. Fig. 12 is a longitudinal sectional view schematically showing the composition of a coating module in one embodiment. The embodiment shown in FIG. 12 has the same configuration as the embodiment shown in FIG. 3 except that it includes paddles, a paddle stirring mechanism, and the like. Therefore, the description overlapping with the embodiment shown in FIG. 3 is omitted.

As shown in FIG. 12, the plating module 400 includes: a paddle 480 arranged between the substrate Wf held by the substrate holder 440 and the resistor 450; and a paddle for stirring the paddle 480 in the plating solution. Leaf stirring mechanism 482. The paddle stirring mechanism 482 is configured to stir the plating solution by reciprocating the paddle 480 parallel to the surface Wf-a to be plated of the substrate Wf.

In one embodiment, the paddle stirring mechanism 482 is configured to adjust the stirring speed of the paddle 480 according to the position adjustment (lifting) of the substrate holder 440 by the distance adjustment mechanism (holder elevating mechanism) 442 . More specifically, the paddle agitation mechanism 482 is in a manner to keep the flow velocity of the plating solution on the surface to be plated Wf-a constant by corresponding to the lifting and lowering of the substrate holder 440 by the distance adjustment mechanism (holder elevating mechanism) 442 , to adjust the stirring speed of the paddle 480. Hereinafter, this point will be explained.

Fig. 13 is a graph showing the flow velocity of the plating solution on the surface to be plated when the distance between the substrate and the resistor is changed at various stirring speeds of the paddles. In FIG. 13 , the vertical axis represents the flow velocity of the plating solution on the surface to be plated Wf-a, and the horizontal axis represents the distance between the substrate Wf and the resistor 450 . In addition, in Fig. 13, curve 490 shows the flow rate of plating solution on the surface Wf-a to be plated when stirring paddle 480 at a standard speed, and curve 492 shows the flow rate of plating solution on the surface Wf-a to be plated when stirring paddle 480 at a speed lower than the standard speed. The flow velocity of the plating surface Wf-a, the curve 494 shows the flow velocity of the plating solution on the surface Wf-a to be plated when the paddle 480 is stirred at a speed higher than the standard speed.

As shown in FIG. 13, when the paddle stirring mechanism 482 stirs the paddle 480 at a standard speed as shown in the curve 490, when the distance between the substrate Wf and the resistor 450 becomes larger, as shown in the curve 494, by Adjusting the stirring speed of the paddle 480 to a high speed can keep the flow rate of the plating solution on the surface Wf-a to be plated constant. In addition, when the paddle stirring mechanism 482 stirs the paddle 480 at a standard speed as shown in the curve 490, when the distance between the substrate Wf and the resistor 450 becomes smaller, as shown in the curve 492, the paddle 480 The stirring speed is adjusted to a low speed, so that the flow rate of the plating solution on the surface Wf-a to be plated can be kept constant. As a result, according to the plating module 400 of one embodiment, even if the height of the substrate holder 440 is changed during the plating process, since the flow rate of the plating solution on the surface Wf-a to be plated can be kept constant, the plating can be performed The uniformity of film thickness distribution is improved.

Next, the plating method of this embodiment will be described. Fig. 14 is a flowchart showing the plating method of this embodiment. The coating method described below uses the coating module 400 of the embodiment shown in Figure 12 to perform, but is not limited thereto, and can also use the coating mold of the embodiment shown in Figure 3, Figure 9, or Figure 11 Group 400 to execute. As shown in FIG. 14 , in the plating method, first, the substrate Wf with the surface to be plated Wf - a facing downward is set on the substrate holder 440 (setting step 110 ). Continuing, the plating method dips the substrate Wf in the plating tank 410 by lowering the substrate holder 440 (dipping step 112 ).

Continuing, the plating method uses the paddle stirring mechanism 482 to agitate the plating solution by shaking the paddle 480 parallel to the plated surface Wf-a of the substrate Wf (stirring step 113 ). Next, in the plating method, by applying a voltage between the anode 430 and the substrate Wf via the anode mask 460 and the resistor 450 , a plating film is formed on the surface to be plated Wf-a (plating step 114 ).

Next, in the plating method, in the plating step 114 , the thickness distribution of the plating film or the current density distribution is measured by the sensor 470 along the radial direction of the surface to be plated Wf-a (measurement step 116 ). Continuing, in the plating method, in the plating step 114, the diameter of the opening 466 of the anode shield 460 is adjusted according to the thickness distribution of the coating film or the current density distribution measured in the measurement step 116 (opening adjustment step 118) . Specifically, the opening adjustment step 118 is to adjust the anode so that the difference between the coating film thickness or the current density between the central part Ct of the surface to be plated Wf-a measured in the measurement step 116 and the midpoint Md becomes smaller. The diameter of the opening 466 of the mask 460 .

Next, in the plating method, in the plating step 114, the distance between the substrate holder 440 and the resistor 450 is adjusted according to the thickness distribution of the plating film or the current density distribution measured in the measurement step 116 (distance adjustment step 120) . Specifically, the distance adjustment step 120 is performed in such a way that the difference between the plating film thickness or the current density between the midpoint Md of the surface to be plated Wf-a measured in the measurement step 116 and the outer edge portion Eg becomes smaller. Adjust the distance between the substrate holder 440 and the resistor 450 . Adjustment of the distance between the substrate holder 440 and the resistor 450 in the distance adjustment step 120 is performed by raising and lowering the substrate holder 440 using the distance adjustment mechanism (holder elevating mechanism) 442 .

Continuing, the plating method corresponds to adjusting the distance between the substrate holder 440 and the resistor 450 through the distance adjusting step 120 , and adjusting the stirring speed of the paddle 480 (speed adjusting step 122 ). Specifically, the speed adjustment step 122 corresponds to adjusting the distance between the substrate holder 440 and the resistor 450 through the distance adjustment step 120, and using the paddle so that the flow rate of the plating solution on the surface Wf-a to be plated is constant. The stirring mechanism 482 adjusts the stirring speed of the paddle 480 .

Next, the plating method judges whether or not a plating film with a desired thickness is formed on the surface to be plated Wf-a based on the plating film thickness distribution or current density distribution measured in the measurement step 116 (judgment step 124 ). In the plating method, when it is judged that the plating film of the desired thickness is not formed on the surface to be plated Wf-a (judgment step 124 , No (No)), the process returns to the measurement step 116 to continue the process. In addition, when the plating method determines that a plated film having a desired thickness is formed on the surface to be plated Wf-a (Yes (Yes) in determination step 124 ), the process ends.

According to the plating method of one embodiment, the diameter of the opening 466 of the anode shield 460 is adjusted while the plating process is performed, and the distance between the substrate Wf and the resistor 450 is adjusted so that the surface Wf to be plated of the substrate Wf can be − The uniformity of the coating film thickness distribution on a is improved. In addition, according to the plating method of one embodiment, since the stirring speed of the paddle 480 is adjusted corresponding to the lifting and lowering of the substrate holder 440 during the plating process, the plating solution can be spread on the surface to be plated Wf- The flow velocity above a is kept constant, and as a result, the uniformity of the coating film thickness distribution can be improved.

In addition, when performing the plating method using the plating module 400 of the embodiment shown in FIG. 3 , the stirring step 113 and the speed adjustment step 122 are not executed. In addition, in the case of performing the plating method using the plating module 400 of the embodiment shown in FIG. , execute the blade position adjustment step of adjusting the position of the blade 480 (making it lift) by means of the blade position adjustment mechanism 484 . In addition, when the coating method is performed using the coating module 400 of the embodiment shown in FIG. 11 , since the distance between the substrate Wf and the paddle 480 is constant, the speed adjustment step 122 is not performed.

Some embodiments of the present invention have been described above. However, the embodiments of the invention described above are intended to facilitate the understanding of the present invention and are not intended to limit the present invention. The present invention can be changed and improved without departing from the gist thereof, and of course equivalents thereof are included in the present invention. In addition, each constituent element described in the scope of claims and the specification can be arbitrarily combined or omitted within the scope of solving at least part of the above problems, or achieving at least part of the effect.

One embodiment of the present application discloses a plating device, which includes: a plating tank, which is used to accommodate the plating solution; a substrate holder, which is used to hold the substrate; an anode, which is accommodated in the aforementioned plating tank Inside; an anode mask, which is arranged between the substrate held by the aforementioned substrate holder and the aforementioned anode, and has an opening formed in the center; and a resistor, which is arranged between the substrate held by the aforementioned substrate holder and the aforementioned anode mask Between the covers, it is arranged at intervals from the above-mentioned anode cover, and a plurality of holes are formed therein.

In addition, one embodiment of the present application discloses a coating device, wherein the anode shield is configured by adjusting the diameter of the opening.

In addition, one embodiment of the present application discloses a plating device, which further includes a sensor capable of measuring the thickness distribution of the plating film or the current along the radial direction of the surface to be plated of the substrate held by the substrate holder Density distribution, the anode mask is configured in such a way that the diameter of the opening is adjusted according to the coating thickness distribution or current density distribution measured by the sensor.

In addition, one embodiment of the present application discloses a plating device, which further includes a distance adjustment mechanism, which is used to adjust the distance between the aforementioned substrate holder and the aforementioned resistor body.

In addition, one embodiment of the present application discloses a plating device, which further includes a sensor capable of measuring the thickness distribution of the plating film or the current along the radial direction of the surface to be plated of the substrate held by the substrate holder Density distribution, the distance adjustment mechanism is configured to adjust the distance between the substrate holder and the resistor according to the coating thickness distribution or current density distribution measured by the sensor.

In addition, an embodiment of the present application discloses a coating device, which further includes paddles disposed between the substrate held by the substrate holder and the resistor, and the paddles are fixed to the substrate holder.

In addition, one embodiment of the present application discloses a coating device, which further includes: paddles arranged between the substrate held in the substrate holder and the resistors; and a paddle position adjustment mechanism, which is It is used to adjust the position of the aforementioned paddles; the aforementioned paddle position adjustment mechanism is configured to adjust the position of the aforementioned paddles synchronously with the adjustment of the position of the aforementioned substrate holder by the aforementioned distance adjustment mechanism.

In addition, one embodiment of the present application discloses a coating device, which further includes: a paddle disposed between the substrate held in the substrate holder and the resistor; and a paddle stirring mechanism for The aforementioned paddle is stirred in the plating solution; the aforementioned paddle stirring mechanism is configured by adjusting the position of the aforementioned substrate holder corresponding to the aforementioned distance adjustment mechanism to adjust the stirring speed of the aforementioned paddle.

In addition, one embodiment of the present application discloses a plating device, wherein the resistance system is formed with a punched plate with a plurality of holes penetrating the substrate side and the anode side, or a porous body with a plurality of pores formed .

In addition, one embodiment of the present application discloses a coating device, which further includes a diaphragm that separates the inside of the coating tank into a cathode area where the substrate is immersed and an anode area where the anode is arranged, and the anode mask The resistor is arranged in the anode region, and the resistor is arranged in the cathode region.

In addition, one embodiment of the present application discloses a plating method, which includes: a setting step, which is to set the substrate on the substrate holder; a dipping step, which is to adjust the position of the substrate holder to dip the substrate In the plating tank containing the plating solution; and the plating step through: an anode mask arranged between the anode contained in the aforementioned plating tank and the substrate immersed in the aforementioned plating solution, and an opening is formed in the center; and a resistor is disposed between the anode cover and the substrate immersed in the plating solution, spaced apart from the anode cover, and a plurality of holes are formed; A plating film is formed on the surface to be plated of the substrate by applying a voltage between the anode and the substrate.

In addition, one embodiment of the present application discloses a plating method, which further includes in the aforementioned plating step: The measuring step is to measure the coating film thickness distribution or current density distribution along the radial direction of the plated surface of the aforementioned substrate by the sensor; and The opening adjustment step is to adjust the diameter of the opening of the anode shield according to the coating thickness distribution or current density distribution measured in the measurement step in the coating step.

In addition, one embodiment of the present application discloses a plating method, wherein the opening adjustment step is based on the central portion of the surface to be plated, and the central portion and the outer edge of the surface to be plated measured by the measurement step The diameter of the opening of the anode shield is adjusted so that the thickness of the plating film or the difference in current density between the midpoints becomes smaller.

In addition, one embodiment of the present application discloses a plating method, wherein the distance adjustment step is further included in the aforementioned plating step, which is based on the coating film thickness distribution or current density distribution measured by the aforementioned measuring step. Adjusting the distance between the aforementioned substrate holder and the aforementioned resistor body.

In addition, one embodiment of the present application discloses a plating method, wherein the aforementioned distance adjustment step is based on the midpoint between the central portion and the outer edge portion of the aforementioned surface to be plated measured by the aforementioned measuring step, and the aforementioned The thickness of the plating film or the difference in current density between the outer edge portions of the plating surface is reduced, and the distance between the substrate holder and the resistor body is adjusted.

In addition, one embodiment of the present application discloses a plating method, which further includes a stirring step, which is arranged between the substrate immersed in the plating solution and the resistor body, and fixed to the substrate holding The paddle of the device is shaken to stir the aforementioned plating solution.

In addition, one embodiment of the present application discloses a plating method, which further includes: a stirring step, which is to shake the paddle arranged between the substrate immersed in the plating solution and the resistor body, to stirring the aforementioned plating solution; and a paddle position adjusting step, which is to adjust the position of the aforementioned paddle synchronously with adjusting the distance between the aforementioned substrate holder and the aforementioned resistor body through the aforementioned distance adjusting step.

In addition, one embodiment of the present application discloses a plating method, which further includes: a stirring step, which is to shake the paddle arranged between the substrate immersed in the plating solution and the resistor body, to Stirring the aforementioned plating solution; and a speed adjusting step, which corresponds to adjusting the distance between the aforementioned substrate holder and the aforementioned resistor body through the aforementioned distance adjusting step to adjust the stirring speed of the aforementioned paddles.

100: Loading port 110:Transfer robot 120: aligner 200: pre-wet module 300: Prepreg module 400: Plating module 410: Plating tank 420: Diaphragm 422: cathode area 424: anode area 430: anode 440: Substrate holder 442: Distance adjustment mechanism 446: Rotary Mechanism 450: resistor body 452: Through hole 460: Anode mask 462: The first anode mask 464, 464－1～464－8: the second anode cover 466: opening 470: sensor 480: paddle 482: paddle stirring mechanism 484: Paddle position adjustment mechanism 486: Blade Support Mechanism 500: cleaning module 600: spin rinse dryer 700: Conveyor 800: Control module 1000: Plating device Ct: central part Eg: outer edge Md: Midpoint Th－11～17, Th－21～23: Thickness distribution of coating film Wf: Substrate Wf－a: plated surface

Fig. 1 is a perspective view showing the overall configuration of a coating device according to this embodiment. Fig. 2 is a plan view showing the overall configuration of the coating device of the present embodiment. Fig. 3 is a longitudinal sectional view schematically showing the composition of a coating module of an embodiment. Fig. 4 is a diagram schematically showing the thickness distribution of the coating film measured by the sensor. Figure 5 is a schematic top view showing the anode shield. Fig. 6 is a schematic diagram showing the distribution of the plating film thickness when the diameter of the opening of the anode shield is changed. FIG. 7 is a diagram schematically showing the distribution of plating film thickness when the distance between the substrate and the resistor is changed. Fig. 8 is a diagram schematically showing the thickness distribution of the plating film on the outer edge of the substrate when the distance between the substrate and the resistor is changed. Fig. 9 is a longitudinal sectional view schematically showing the composition of a coating module in one embodiment. FIG. 10 is a graph showing the flow velocity of the plating solution on the surface to be plated when the distance between the substrate and the resistor is changed. Fig. 11 is a longitudinal sectional view schematically showing the composition of a coating module in one embodiment. Fig. 12 is a longitudinal sectional view schematically showing the composition of a coating module in one embodiment. Fig. 13 is a graph showing the flow velocity of the plating solution on the surface to be plated when the distance between the substrate and the resistor is changed. Fig. 14 is a flowchart showing the plating method of this embodiment.

400: Plating module

410: Plating tank

420: Diaphragm

422: cathode area

424: anode area

430: anode

440: Substrate holder

442: Distance adjustment mechanism

446: Rotary Mechanism

450: resistor body

452: Through hole

460: Anode mask

462: The first anode mask

464: second anode mask

466: opening

470: sensor

Wf: Substrate

Wf-a: plated surface

Claims (18)

A coating device, comprising: A plating tank, which is used to accommodate the plating solution; a substrate holder for holding a substrate; an anode, which is accommodated in the aforementioned coating tank; an anode mask disposed between the substrate held by the substrate holder and the anode and having an opening formed in the center; and The resistor is disposed between the substrate held by the substrate holder and the anode mask at intervals from the anode mask, and has a plurality of holes formed therein. The coating device according to claim 1, wherein the aforementioned anode shield is formed by adjusting the diameter of the aforementioned opening. The coating device according to claim 2, further comprising a sensor capable of measuring the coating film thickness distribution or current density distribution along the radial direction of the coated surface of the substrate held in the aforementioned substrate holder, The anode mask is configured to adjust the diameter of the opening according to the coating thickness distribution or current density distribution measured by the sensor. The coating device according to claim 1, further comprising a distance adjustment mechanism, which is used to adjust the distance between the aforementioned substrate holder and the aforementioned resistor. The coating device according to claim 4, further comprising a sensor capable of measuring the thickness distribution or current density distribution of the coating film along the radial direction of the surface to be coated of the substrate held in the substrate holder, The distance adjustment mechanism is configured to adjust the distance between the substrate holder and the resistor according to the coating thickness distribution or current density distribution measured by the sensor. The coating device as claimed in claim 1, further comprising paddles disposed between the substrate held in the substrate holder and the resistor, The paddle is fixed on the substrate holder. As the coating device of claim 4, which further comprises: a paddle disposed between the substrate held by the substrate holder and the resistor; and Blade position adjustment mechanism, which is used to adjust the position of the aforementioned blades; The paddle position adjustment mechanism is configured to adjust the position of the paddle synchronously with the adjustment of the position of the substrate holder by the distance adjustment mechanism. As the coating device of claim 4, which further comprises: a paddle disposed between the substrate held by the substrate holder and the resistor; and Paddle stirring mechanism, which is used to stir the aforementioned paddles in the plating solution; The aforementioned paddle stirring mechanism is configured by adjusting the position of the aforementioned substrate holder corresponding to the aforementioned distance adjustment mechanism to adjust the stirring speed of the aforementioned paddle. The coating device according to claim 1, wherein the resistive system is formed with a punched plate with a plurality of holes penetrating through the substrate side and the anode side, or a porous body with a plurality of fine holes formed therein. The coating device according to claim 1, further comprising a diaphragm, which separates the inside of the coating tank into a cathode area where the substrate is immersed and an anode area where the anode is arranged, The aforementioned anode mask is arranged in the aforementioned anode region, The aforementioned resistor is disposed in the aforementioned cathode region. A plating method comprising: a setting step of setting the substrate on the substrate holder; A dipping step, which is to dip the substrate into the plating tank containing the plating solution by adjusting the position of the aforementioned substrate holder; and The plating step passes through: an anode mask, which is arranged between the anode accommodated in the aforementioned plating tank and the substrate immersed in the aforementioned plating solution, and has an opening formed in the center; and a resistor, which Between the aforementioned anode mask and the substrate immersed in the aforementioned plating solution, it is arranged at a distance from the aforementioned anode mask, and a plurality of holes are formed; by applying a voltage between the aforementioned anode and the aforementioned substrate. A plated film is formed on the surface to be plated of the aforementioned substrate. As the plating method of claim 11, wherein in the aforementioned plating step, further comprising: The measuring step is to measure the coating film thickness distribution or current density distribution along the radial direction of the plated surface of the aforementioned substrate by the sensor; and The opening adjustment step is to adjust the diameter of the opening of the anode shield according to the coating thickness distribution or current density distribution measured in the measurement step in the coating step. The plating method according to claim 12, wherein the aforementioned opening adjustment step is based on the center portion of the aforementioned surface to be plated measured by the aforementioned measuring step, and the midpoint between the center portion and the outer edge of the aforementioned plated surface The diameter of the opening of the anode shield is adjusted in such a way that the difference in coating film thickness or current density between them becomes smaller. The plating method according to claim 12, wherein the distance adjustment step is further included in the aforementioned plating step, which is to adjust the aforementioned substrate holder and the distance adjustment step based on the coating film thickness distribution or current density distribution measured by the aforementioned measuring step. The distance between the aforementioned resistors. The plating method of claim 14, wherein the distance adjustment step is based on the midpoint between the central part and the outer edge of the aforementioned surface to be plated measured by the aforementioned measurement step, and the outer edge of the aforementioned plated surface The thickness of the plated film or the difference in current density between the substrate holders and the distance between the resistors are adjusted. The plating method according to claim 11, further comprising a stirring step, which is to shake the paddle arranged between the substrate immersed in the plating solution and the resistor and fixed to the substrate holder, To stir the aforementioned plating solution. Such as the plating method of claim 14, which further comprises: a stirring step of stirring the plating solution by shaking a paddle placed between the substrate immersed in the plating solution and the resistor; and The paddle position adjustment step is to adjust the position of the paddle synchronously with the adjustment of the distance between the substrate holder and the resistor body through the distance adjustment step. Such as the plating method of claim 14, which further comprises: a stirring step of stirring the plating solution by shaking a paddle placed between the substrate immersed in the plating solution and the resistor; and The speed adjusting step corresponds to adjusting the stirring speed of the paddle by adjusting the distance between the substrate holder and the resistor in the distance adjusting step.

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