TW202231395A - Laser light introduction device - Google Patents
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Abstract
Description
本發明有關一種雷射光導入裝置。The invention relates to a laser light introduction device.
在使植入至半導體晶圓之摻雜劑活化之退火、使非晶質膜多晶化之退火等中,利用雷射退火。在進行雷射退火時,將半導體晶圓等加工對象物收納於處理室,透過設置於處理室的頂面之雷射光透過窗使雷射光入射於加工對象物。Laser annealing is used in annealing to activate dopants implanted in semiconductor wafers, annealing to polycrystallize amorphous films, and the like. When laser annealing is performed, an object to be processed such as a semiconductor wafer is accommodated in a processing chamber, and the laser light is made incident on the object to be processed through a laser light transmission window provided on a ceiling surface of the processing chamber.
由於雷射退火時從加工對象物飛散之飛散物附著在雷射光透過窗,雷射光透過窗被污染。若雷射光透過窗被污染,則雷射光的透過率降低。因此,加工對象物的表面上的雷射光的強度降低,導致無法進行適當的雷射退火。抑制雷射光透過窗的污染之各種退火裝置已被提出(例如,參閱專利文獻1等。)。The laser light transmission window is contaminated by scattering objects scattered from the object to be processed during laser annealing and adheres to the laser light transmission window. If the laser light transmission window is contaminated, the transmittance of the laser light decreases. Therefore, the intensity of the laser light on the surface of the object to be processed is lowered, and proper laser annealing cannot be performed. Various annealing apparatuses for suppressing contamination of the laser light transmission window have been proposed (for example, refer to Patent Document 1, etc.).
在專利文獻1中揭示之退火裝置中,在雷射光透過窗的正下方設置有箱體,從箱體內的氣體流路向雷射光透過窗吹送氣體。藉此,形成從箱體的內部朝向外部之氣體的流動,使得來自加工對象物的飛散物不會朝向雷射光透過窗。 [先前技術文獻] In the annealing apparatus disclosed in Patent Document 1, a box is provided just below the laser light transmission window, and gas is blown from the gas flow path in the box to the laser light transmission window. Thereby, the flow of the gas from the inside of the box to the outside is formed, so that the scattering material from the object to be processed does not go toward the laser light transmission window. [Prior Art Literature]
[專利文獻1] 日本特開2000-021807號公報[Patent Document 1] Japanese Patent Laid-Open No. 2000-021807
[發明所欲解決之問題][Problems to be Solved by Invention]
本發明的目的為提供一種能夠提高使雷射光透過之構件的污染抑制效果之雷射光導入裝置。 [解決問題之技術手段] An object of the present invention is to provide a laser light introduction device capable of enhancing the contamination suppressing effect of a member that transmits laser light. [Technical means to solve problems]
依據本發明的一觀點,提供一種雷射光導入裝置,係具備: 板狀構件,係設置有開口部,並具有彼此朝向相反方向之上表面和下表面; 透過構件,係安裝於前述板狀構件的上表面而封住前述開口部,並使雷射光透過;以及 氣體流路,係前端設為向前述開口部的側面開口之噴出口,從前述噴出口向朝向所對置之側面之方向噴出氣體, 將在俯視下與從前述噴出口的氣體的噴出方向正交之方向定義為寬度方向時,前述開口部的寬度在前述板狀構件的厚度方向上變化,下表面上的寬度比寬度的最小值寬。 [發明之效果] According to an aspect of the present invention, a laser light introduction device is provided, which is provided with: a plate-like member provided with an opening portion and having an upper surface and a lower surface facing in opposite directions to each other; a transmission member mounted on the upper surface of the plate-shaped member to seal the opening and transmit the laser light; and The gas flow path is provided with an ejection port opening to the side surface of the opening portion at the front end, and the gas is ejected from the ejection port in a direction toward the opposite side surface. When the direction perpendicular to the gas ejection direction from the ejection port in plan view is defined as the width direction, the width of the opening portion varies in the thickness direction of the plate-shaped member, and the width on the lower surface is smaller than the minimum value of the width. width. [Effect of invention]
藉由從噴出口噴出之氣體的流動,遮蔽從板狀構件的下表面側進入開口部而朝向透過構件之飛散物。藉由使板狀構件的下表面上的開口部的寬度比寬度的最小值寬,氣體容易朝向下方流動,朝向透過構件之氣體的流動被抑制,能夠使遮蔽飛散物之效果提高。By the flow of the gas ejected from the ejection port, the scattering material which enters the opening from the lower surface side of the plate-like member and goes toward the permeable member is shielded. By making the width of the opening on the lower surface of the plate-like member wider than the minimum value of the width, the gas tends to flow downward, the flow of the gas toward the permeable member is suppressed, and the effect of shielding scattered objects can be enhanced.
參閱圖1~圖7,針對基於本申請發明的一實施例之雷射光導入裝置進行說明。
圖1係搭載有基於本實施例之雷射光導入裝置10之雷射加工裝置的概略圖。基於本實施例之雷射加工裝置例如用於被植入於半導體晶圓之摻雜劑的活化退火。半導體晶圓等加工對象物52被保持在收納於處理室50之可動工作臺51。在處理室50的頂面安裝有雷射光導入裝置10。雷射光束70透過雷射光導入裝置10被導入處理室50內並入射於加工對象物52。
Referring to FIG. 1 to FIG. 7 , a laser light introduction device according to an embodiment of the present invention will be described.
FIG. 1 is a schematic diagram of a laser processing apparatus equipped with a laser
從氣體供給源40通過配管41向雷射光導入裝置10供給氣體。作為氣體,利用氮氣、清潔乾燥空氣等。供給至雷射光導入裝置10之氣體被導入處理室50內並從排氣口53排出。The gas is supplied from the
接著,針對雷射光學系統進行說明。在基於本實施例之雷射加工裝置中,作為雷射光源61使用雷射二極管。另外,作為雷射光源61,可以使用其他雷射振盪器,例如Nd:YAG雷射等固體雷射振盪器。雷射光源61例如輸出波長808nm的準連續振盪(QCW)的雷射光束70。另外,可以使用輸出波長800nm以上且950nm以下的紅外線區域的雷射光束之雷射光源。或者,亦可使用輸出綠色波長區域、紫外線波長區域的雷射光束之雷射光源。Next, the laser optical system will be described. In the laser processing apparatus according to this embodiment, a laser diode is used as the
從雷射光源61輸出之雷射光束70經由衰減器62、光束擴展器63、均化器64,並藉由折返鏡65朝向下方反射。朝向下方反射之雷射光束70經由聚光透鏡66以及雷射光導入裝置10而被導入處理室50內。被導入處理室50內之雷射光束70入射於加工對象物52。The
光束擴展器63對雷射光束70進行準直,並且放大光束直徑。均化器64以及聚光透鏡66將加工對象物52的表面上的光束點整形為長條形狀,並且使光束截面內的光強度分布均勻。可動工作臺51使加工對象物52在與聚光透鏡66的光軸正交之兩個方向移動,藉此能夠使雷射光束70入射於加工對象物52的表面的大致整個區域。The beam expander 63 collimates the
圖2係基於本實施例之雷射光導入裝置10的俯視圖。圖3A以及圖3B分別係圖2的單點鏈線3A-3A以及單點鏈線3B-3B上的剖視圖。定義將與加工對象物52的上表面平行之兩個方向作為x方向以及y方向且將加工對象物52的上表面的法線方向作為z方向之xyz正交座標系統。將入射於加工對象物52之雷射光束70(圖1)的長條形狀的光束點71的長度方向作為y方向。FIG. 2 is a top view of the laser
在處理室50的頂面設置有開口部50A。雷射光導入裝置10安裝於處理室50的頂面,以從內側封住該開口部50A。雷射光導入裝置10包含板狀構件11以及透過構件12。在板狀構件11設置有開口部15。將板狀構件11的兩個表面中朝向處理室50的外側之表面稱為上表面11T,並將其相反側的表面(朝向處理室50的內側之表面)稱為下表面11B。An opening 50A is provided on the top surface of the
在板狀構件11的上表面側經由透過構件保持具13支撐有透過構件12。透過構件12在俯視下具有圓形形狀,封住板狀構件11的開口部15。透過構件12由使雷射光束70透過之光學材料形成。雷射光束70透過透過構件12,通過板狀構件11的開口部15以及處理室50的開口部50A,被導入處理室50內。通過開口部15之雷射光束70係聚光光束。The
在板狀構件11設置有氣體流路20。從氣體供給源40通過配管41向氣體流路20供給氣體。並且,在圖3A中,示意地示出了配管41。供給至氣體流路20之氣體從配置於開口部15的側面的一部分之噴出口21向朝向所對置之側面15C之方向噴出。在圖2以及圖3A中,以箭頭示出了氣體的噴出方向。開口部15在俯視下的形狀係圓角長方形。噴出口21設置於與長方形的一個邊對應之側面。The plate-
將在俯視下與氣體的噴出方向(x方向)正交之方向(y方向)定義為寬度方向。開口部15的寬度在板狀構件11的厚度方向上變化。下表面11B上的寬度比開口部15的寬度的最小值寬。將比寬度最窄之位置更靠上表面11T側的部分稱為開口部15的上側部分15A,並將下表面11B側的部分稱為開口部15的下側部分15B。上側部分15A的沿x方向延伸之側面對應於在yz截面(圖3B)上聚光之雷射光束70的形狀而傾斜。亦即,上側部分15A的寬度從上表面11T朝向下表面11B逐漸變窄。The direction (y direction) orthogonal to the ejection direction (x direction) of the gas in plan view is defined as the width direction. The width of the opening
在上側部分15A與下側部分15B的邊界處,在開口部15的側面設置有段差,以使下側部分15B的寬度不連續地比上側部分15A的寬度寬。下側部分15B的寬度亦從上表面11T朝向下表面11B逐漸變窄。下側部分15B的下端的寬度比上側部分15A的下端的寬度寬。在板狀構件11的厚度方向上,噴出口21的上端的位置和上側部分15A與下側部分15B的邊界的位置一致。At the boundary between the
設置有噴出口21之開口部15的側面(圖3A中左側的側面)對應於在zx截面中聚光之雷射光束70的形狀而傾斜。與噴出口21對置之開口部15的側面15C(圖3A中右側的側面)從上表面11T朝向下表面11B向遠離噴出口21之朝向傾斜。換言之,朝向側面15C的外側之法線向量朝向斜下方。The side surface on which the
氣體流路20在俯視下從氣體的流動的上游側朝向下游側沿寬度方向(y方向)擴展。噴出口21具有沿寬度方向較長之形狀。在氣體流路20的內部設置有複數個分隔壁22。氣體流路20的噴出口21側的一部分藉由複數個分隔壁22沿寬度方向區分為複數個區隔區。分隔壁22從噴出口21朝向氣體的流動的上游側延伸,到達氣體流路20的寬度變窄之區域。The
氣體流路20中,與噴出口21連續之前端的一部分20A從氣體的流動的上游側朝向下游側向遠離上表面11T之朝向傾斜。故,氣體相對於與xy面平行之方向略微朝向下方噴出。In the
在板狀構件11的上表面11T與透過構件12之間確保有間隙30。從氣體流路20分叉之分叉路25延伸至間隙30。例如,分叉路25包含在俯視下沿著透過構件12的圓形外周線配置之圓周狀部分25A、從圓周狀部分25A朝向間隙30之部分25B以及連接圓周狀部分25A和氣體流路20之部分25C。被導入氣體流路20之氣體通過分叉路25向間隙30內噴出。A
接著,針對上述實施例的優異效果進行說明。
若雷射光束70入射於加工對象物52,則飛散物從加工對象物52飛散。藉由從噴出口21噴出之氣體,形成主要沿x方向在開口部15內流動之氣流。藉由使來自加工對象物52的飛散物隨著該氣流沿x方向流動,朝向透過構件12之飛散物被遮蔽,抑制飛散物向透過構件12的附著。藉此,透過構件12不易被污染。
Next, the excellent effects of the above-described embodiments will be described.
When the
接著,按雷射光導入裝置10的特徵性的各種構造,針對實施例的優異效果進行說明。Next, the excellent effects of the embodiments will be described according to various structures characteristic of the laser
[基於加寬開口部15在下表面11B上的寬度之構造之效果]
圖4A係基於實施例之雷射光導入裝置10的概略俯視圖,圖4B係基於比較例之雷射光導入裝置10的概略俯視圖。
[Effect of the structure based on widening the width of the opening
在基於實施例之雷射光導入裝置10(圖4A)中,設置於板狀構件11(圖3B)之上側部分15A的寬度朝向下方逐漸變窄,在上側部分15A與下側部分15B的邊界處,寬度不連續地變寬。而且,下側部分15B的寬度亦朝向下方逐漸變窄。下側部分15B的下端的寬度比上側部分15A的下端的寬度寬。In the laser light introducing device 10 ( FIG. 4A ) according to the embodiment, the width of the
相對於此,在比較例(圖4B)中,開口部15的寬度並未不連續地變化,從上表面11T連續地逐漸變窄至下表面11B。寬度方向的兩側的側面與圖3B的上側部分15A的側面相同,對應於聚光之雷射光束70的形狀而傾斜。噴出口21在沿開口部15的寬度方向延伸之側面遍及寬度方向的大致整個區域而配置。On the other hand, in the comparative example ( FIG. 4B ), the width of the
在比較例(圖4B)中,從噴出口21噴出之氣體朝向與噴出口21對置之側面15C流動,進一步沿著與噴出口21對置之側面15C的傾斜朝向斜下方。開口部15的寬度朝向下方逐漸變窄,故氣體的一部分碰到開口部15的側方的斜面15D,不易向下方洩漏。故,斜面15D的下端附近的壓力上升,一部分氣體返回開口部15內。返回開口部15內之氣體的一部分到達透過構件12的表面。如此,在氣體的流動中產生紊亂,故,會導致遮蔽從加工對象物52(圖3A、圖3B)朝向透過構件12之飛散物之功能下降。In the comparative example ( FIG. 4B ), the gas ejected from the
在實施例(圖4A)中,噴出口21遍及上側部分15A的寬度方向的大致整個區域而配置,下側部分15B比配置有噴出口21之寬度方向的範圍更加沿寬度方向擴展。從噴出口21噴出之氣體若沿著與噴出口21對置之側面15C向斜下方流動而到達下側部分15B,則沿寬度方向擴展。故,側面15C的下端附近的壓力上升程度小於比較例(圖4B)。故,大部分氣體不會在側面15C的下端附近折返,而是流入處理室50(圖3A、圖3B)內。在氣體的流動中不易產生紊亂,故,不易發生遮蔽從加工對象物52(圖3A、圖3B)朝向透過構件12之飛散物之功能的下降。In the embodiment ( FIG. 4A ), the
若不改變噴出口21的寬度方向的尺寸而使上側部分15A的寬度擴展至與下側部分15B的寬度相同的程度,則在俯視下,在開口部15內產生不會形成充分之氣體的流動之區域。在氣體的流動不充分之區域,遮蔽朝向透過構件12之飛散物之功能低。在實施例中,藉由僅使下側部分15B沿寬度方向擴展,在俯視下,避免在開口部15的上側部分15A內產生氣體的流動不充分之區域。If the width of the
此外,即使加寬下側部分15B的寬度,藉由使上側部分15A在俯視下的大小保持在略大於雷射光束70的截面之程度,亦可抑制從加工對象物52朝向透過構件12(圖3A、圖3B)之飛散物的路徑的截面不必要地變大。In addition, even if the width of the
在實施例中,位於下側部分15B的寬度方向的兩側之側面(出現在圖3B之側面)以下側部分15B的寬度朝向下方逐漸變窄之方式傾斜,但並非必須使該等側面傾斜。亦可以使該等側面與下表面11B垂直。In the embodiment, the side surfaces on both sides in the width direction of the
此外,可以使下側部分15B的側面沿相反方向傾斜。亦即,亦可以使下側部分15B的側面以下側部分15B的寬度朝向下方逐漸變寬之方式傾斜。此時,無需在上側部分15A與下側部分15B的邊界形成段差。亦即,可以使下側部分15B的上端的寬度與上側部分15A的下端的寬度相等。Further, the side surface of the
[與噴出口21對置之側面15C的法線向量朝向斜下方之構造的效果]
圖5A係基於實施例之雷射光導入裝置10的剖視圖,圖5B係基於比較例之雷射光導入裝置10的剖視圖。
[Effect of the structure in which the normal vector of the
在比較例(圖5B)中,與噴出口21對置之開口部15的側面15C對應於聚光之雷射光束70的形狀而傾斜。亦即,側面15C朝向下方向靠近噴出口21之朝向傾斜。若從噴出口21噴出之氣體到達所對置之側面15C,則如圖5B中以箭頭所示,氣體的一部分沿著側面15C朝向斜上方流動而到達透過構件12。故,導致遮蔽從加工對象物52朝向透過構件12之飛散物之功能下降。In the comparative example ( FIG. 5B ), the
相對於此,在實施例(圖5A)中,側面15C朝向下方向遠離噴出口21之朝向傾斜。故,如圖5A中以箭頭表示,從噴出口21噴出而到達側面15C之氣體的大部分沿著側面15C朝向斜下方流動而被導入處理室50內。不易產生朝向透過構件12之氣體的流動,故,能夠遮蔽從加工對象物52朝向透過構件12之飛散物。而且,來自加工對象物52的飛散物隨著氣流沿橫向流動,從加工對象物52的上方的空間被排除,故,能夠抑制飛散物向加工對象物52的再附著。On the other hand, in the embodiment ( FIG. 5A ), the
為了獲得充分的飛散物遮蔽功能,將上表面11T與側面15C所呈之角度設為銳角為佳,設為60°以下更為佳。In order to obtain sufficient scattering shielding function, the angle formed by the
[將氣體流路20的前端附近區分為複數個區隔區之效果]
圖6A係基於實施例之雷射光導入裝置10的概略俯視圖,圖6B係基於比較例之雷射光導入裝置10的概略俯視圖。
[Effect of dividing the vicinity of the front end of the
在基於實施例之雷射光導入裝置10(圖6A)中,氣體流路20的前端的附近部分在寬度方向上藉由複數個分隔壁22區分為複數個區隔區。相對於此,在比較例(圖6B)中,氣體流路20並未沿寬度方向區分為複數個區隔區。在圖6A以及圖6B中,表示氣流的朝向之箭頭的長度分布的趨勢表示流速分布的趨勢。In the laser
在比較例(圖6B)中,噴出口21的寬度方向的中央部分的氣體的流速比兩端部分的氣體的流速快。在俯視下,在流速慢之區域,遮蔽從加工對象物52朝向透過構件12之飛散物之功能下降。相對於此,在實施例中,氣體流路20的前端附近部分藉由複數個分隔壁22沿寬度方向區分為複數個區隔區。分隔壁22從噴出口21朝向氣體的流動的上游側延伸至氣體流路20的寬度變窄之區域,故,寬度方向上的流速的分布接近均勻。故,能夠使遮蔽從加工對象物52朝向透過構件12之飛散物之效果在開口部15內的整個區域大致均勻。In the comparative example ( FIG. 6B ), the flow velocity of the gas in the center portion in the width direction of the
[基於使氣體流路20的前端的一部分20A朝向斜下方之構造之效果]
在實施例中,氣體流路20的前端的一部分20A(圖3A)朝向斜下方,故,從噴出口21噴出之氣體朝向斜下方流動。故,不易產生朝向透過構件12之氣體的流動,因而可抑制遮蔽從加工對象物52朝向透過構件12之飛散物之效果的下降。
[Effects based on the structure in which a
[設置分叉路25之效果]
圖7係基於實施例之雷射光導入裝置10的剖視圖。在實施例中,被導入氣體流路20之氣體的一部分通過分叉路25供給至板狀構件11與透過構件12之間的間隙30。如箭頭所示,供給至間隙30之氣體通過開口部15被導入處理室50內。故,可抑制在開口部15內朝向上方而到達透過構件12之氣流的產生。藉此,能夠使遮蔽從加工對象物52朝向透過構件12之飛散物之效果提高。
[Effect of setting fork road 25]
FIG. 7 is a cross-sectional view of the laser
以上,關於基於實施例之雷射光導入裝置10的5個特徴性構造的每一個,針對可藉由該構造獲得之優異效果進行了說明。基於實施例之雷射光導入裝置10具有上述5個特徴性構造的全部,但無需為了抑制透過構件12的污染而具備上述5個特徴性構造的全部。在具備5個特徴性構造中的至少1個構造之雷射光導入裝置中,亦可獲得抑制透過構件12的污染之優異效果。In the above, with respect to each of the five characteristic structures of the laser
接著,針對上述實施例的各種變形例進行說明。
在上述實施例中,設置於板狀構件11之開口部15(圖2)在俯視下的形狀係圓角長方形,但亦可設為其他形狀。例如,可以設為圓形、橢圓形等。開口部15的形狀對應於雷射光束70的光束截面的形狀而設定即可。將開口部15在俯視下的形狀設為圓形或橢圓形時,開口部15的寬度在x方向上變化。此時,在與x方向正交之截面(相當於圖3B的剖視圖)的各個截面中,使下表面11B上的寬度比開口部15的寬度的最小值寬即可。
Next, various modifications of the above-described embodiment will be described.
In the above-mentioned embodiment, the shape of the opening 15 ( FIG. 2 ) provided in the plate-
此外,在上述實施例中,針對將雷射光導入裝置10搭載於用於使摻雜劑活化的雷射退火裝置之例子進行了說明,但還能夠搭載於其他雷射加工裝置。In addition, in the above-described embodiment, the example in which the laser
此外,在上述實施例中,將雷射光導入裝置10的板狀構件11(圖3A、圖3B)安裝於處理室50的頂面,但亦可將處理室50的壁面本身用作雷射光導入裝置10的板狀構件11。In addition, in the above-mentioned embodiment, the plate-shaped member 11 (FIG. 3A, FIG. 3B) of the laser
上述實施例係例示,本發明並非限定於上述實施例者。例如,本領域技術人員可知能夠進行各種變更、改良、組合等。The above-mentioned embodiments are illustrative, and the present invention is not limited to the above-mentioned embodiments. For example, it is apparent to those skilled in the art that various changes, improvements, combinations, and the like can be made.
10:雷射光導入裝置
11:板狀構件
11B:板狀構件的下表面
11T:板狀構件的上表面
12:透過構件
13:透過構件保持具
15:開口部
15A:上側部分
15B:下側部分
15C:開口部的側面
15D:開口部的側方的斜面
20:氣體流路
20A:氣體流路的前端的一部分
21:噴出口
22:分隔壁
25:分叉路
25A,25B,25C:分叉部分
30:間隙
40:氣體供給源
41:配管
50:處理室
50A:處理室的開口部
51:可動工作臺
52:加工對象物
53:排氣口
61:雷射光源
62:衰減器
63:光束擴展器
64:均化器
65:折返鏡
66:聚光透鏡
70:雷射光束
71:光束點
10: Laser light introduction device
11:
[圖1]係搭載有基於實施例之雷射光導入裝置之雷射加工裝置的概略圖。
[圖2]係基於本實施例之雷射光導入裝置的俯視圖。
[圖3A]以及[圖3B]分別係圖2的單點鏈線3A-3A、單點鏈線3B-3B上的剖視圖。
[圖4A]係基於實施例之雷射光導入裝置的概略俯視圖,[圖4B]係基於一比較例之雷射光導入裝置的概略俯視圖。
[圖5A]係基於實施例之雷射光導入裝置的剖視圖,[圖5B]係基於一比較例之雷射光導入裝置的剖視圖。
[圖6A]係基於實施例之雷射光導入裝置的概略俯視圖,[圖6B]係基於一比較例之雷射光導入裝置10的概略俯視圖。
[圖7]係基於實施例之雷射光導入裝置的剖視圖。
FIG. 1 is a schematic diagram of a laser processing apparatus equipped with the laser light introducing apparatus according to the embodiment.
[FIG. 2] It is a top view of the laser light introduction device based on this embodiment.
[FIG. 3A] and [FIG. 3B] are cross-sectional views taken along the single-
10:雷射光導入裝置 10: Laser light introduction device
11:板狀構件 11: Plate member
11B:板狀構件的下表面 11B: Lower surface of plate-like member
11T:板狀構件的上表面 11T: Upper surface of plate member
12:透過構件 12: Through Components
13:透過構件保持具 13: Through the component holder
15:開口部 15: Opening
15A:上側部分 15A: Upper part
15B:下側部分 15B: Lower part
15C:開口部的側面 15C: Side of the opening
20:氣體流路 20: Gas flow path
20A:氣體流路的前端的一部分 20A: A part of the front end of the gas flow path
21:噴出口 21: spout
25A:分叉部分 25A: Forked Section
25B:分叉部分 25B: Forked Section
25C:分叉部分 25C: Forked Section
30:間隙 30: Gap
40:氣體供給源 40: Gas supply source
41:配管 41: Piping
50:處理室 50: Processing room
50A:處理室的開口部 50A: Opening of processing chamber
52:加工對象物 52: Processing object
70:雷射光束 70: Laser Beam
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