TW202230432A - Plasma processing device and working method thereof - Google Patents

Abstract

The invention discloses a plasma processing device and a substrate processing method, and the device comprises the components of a reaction chamber which is provided with an opening at the top and is internally provided with a pedestal at the bottom, and the pedestal is used for bearing a to-be-processed substrate; the mounting substrate is located in the opening; the gas spraying head is positioned below the mounting base plate and is arranged opposite to the base; the electrode is positioned between the mounting substrate and the gas spraying head; the insulating layers are respectively positioned between the mounting substrate and the electrode and between the gas spraying head and the electrode; and the direct current is electrically connected with the electrode, so that the gas spraying head is adsorbed on the mounting substrate. According to the invention, the physical contact between the gas spray header and a subsequent electrode is improved, so that the temperature of the gas spray header is better controlled, and the installation complexity is reduced.

Description

Plasma processing device and its working method

The present invention relates to the technical field of semiconductor processing equipment, in particular to a plasma processing device and a working method thereof.

As the semiconductor manufacturing technology becomes more and more sophisticated, the integrated circuits have undergone major changes, which has made the computing performance and storage capacity of computers advance by leaps and bounds, and has driven the rapid development of peripheral industries. The semiconductor industry is also developing at a rate of doubling the number of transistors on an integrated circuit every 18 months, as predicted by Moore's Law. For example, the critical dimensions of transistors continue to shrink and densities continue to increase. The corresponding integrated circuit wafer manufacturing process has also become more steps and more complex, and each step of the manufacturing process is subject to stricter standards in terms of stability and uniformity.

In order to ensure the continuous stability of the manufacturing process of the integrated circuit chip, the stability of the structure of the semiconductor processing device used therein needs to be guaranteed, especially the stability of some key process components.

For example, the electrode structure of the existing common capacitively coupled plasma etching machine is a parallel plate structure, and the lower electrode is an electrostatic chuck (Electrostatic Chuck, ESC), on which the substrate to be processed is usually placed. On the one hand, the electrostatic chuck is connected with the cooling device to control the temperature of the substrate to be processed during the etching process, and on the other hand, it is connected with the radio frequency signal. The upper electrode is a silicon-based gas showerhead (Si showerhead), which is attached to the aluminum mount base by means of physical connection such as aluminum screws, and the outer side of the silicon-based gas showerhead is a silicon-based material. The upper ground ring is fixed on an aluminum alloy baseplate through aluminum screws, and then the aluminum alloy baseplate is fixed on the mounting base plate through a set of aluminum screws, and the mounting base plate is located on the upper surface of the cavity .

It can be seen from this that the single crystal silicon electrode can provide a silicon environment for etching without causing pollution from other elements. The aluminum substrate provides a physical process for the single crystal silicon electrode through some screws, and realizes temperature control through physical contact. . However, due to the difference in the expansion coefficient between the aluminum substrate and the monocrystalline silicon electrode, the screws that maintain the contact between the two will inevitably loosen over time, which will affect the heat conduction and the DC RF circuit, which will lead to The problem of poor substrate yield.

The purpose of the present invention is to provide a plasma processing device and a working method thereof, so as to improve the physical contact between the gas shower head and the electrode, so as to achieve better temperature control, so as to achieve the purpose of improving the substrate yield.

In order to achieve the above object, the present invention realizes through the following technical solutions:

A plasma processing device, comprising: a reaction chamber with an opening at the top, a base at the inner bottom, and the base is used to carry a substrate to be processed; a mounting substrate, located in the opening; a gas shower head, located at the bottom of the mounting substrate The electrode is located between the mounting substrate and the gas shower head; the insulating layer is located between the mounting substrate and the electrode and between the gas shower head and the electrode; the DC power supply is electrically connected to the electrode to The gas shower head is adsorbed on the mounting substrate.

Preferably, the mounting substrate is provided with a plurality of installation through holes; the electrodes are provided with a plurality of blind installation holes, and the installation through holes and the installation blind holes are respectively corresponding; the first fixing member is used to penetrate the installation through holes and stop at the installation blind holes. inside, to connect the mounting substrate and the electrode fixedly.

Preferably, the electrode has a U-shaped structure, the mounting substrate is located inside the electrode, and a second fixing member is used to connect the side wall of the electrode and the side wall of the mounting substrate.

Preferably, the second fixing member is a plurality of first screws, and each first screw penetrates the side wall of the electrode and stops in the mounting substrate.

Preferably, the mounting substrate has an opposite first surface and a second surface, a plurality of first air holes penetrating the first surface and the second surface are arranged on the mounting substrate at intervals, and the first end of each first air hole is connected to the reactive gas. the gas source, the second end of which is communicated with the gas shower head.

Preferably, it further includes: a gas buffer, which is arranged above the mounting substrate, and forms a closed space with the first surface, for buffering the reaction gas introduced from the gas pipeline of the gas source; a heater, which surrounds the gas The periphery of the buffer part is arranged; a graphite heat-conducting sheet is arranged between the heater and the mounting substrate, and the heat generated by the heater is conducted to the gas shower head through the graphite heat-conducting sheet, the mounting substrate and the electrode, so as to control the temperature of the gas shower head .

Preferably, the electrode has an opposite third surface and a fourth surface, the second surface of the mounting substrate is in contact with the third surface, the electrode is provided with a plurality of second air holes penetrating the third surface and the fourth surface at intervals, and the first One air hole and the second air hole are respectively arranged correspondingly, one end of each second air hole is communicated with the second end of the first air hole, and the other end is communicated with the gas shower head.

Preferably, it further comprises: an upper ground ring, the inner edge of the upper ground ring is provided with an annular step, the gas shower head is located inside the upper ground ring, and its edge is mounted on the annular step, and the upper ground ring is fixed on the electrode by fixing the upper ground ring on the electrode. , to fix the gas shower head.

Preferably, a plurality of first through holes are arranged at intervals on the edge of the electrode, and a plurality of blind holes are arranged at intervals on the outer edge of the upper ground ring, and the first through holes and the blind holes are respectively arranged correspondingly.

Preferably, it further includes: a plurality of second screws, each of which penetrates through the first through hole and stops in the blind hole.

Preferably, the upper grounding ring further includes a protruding portion, the protruding portion is located on the annular step, the gas shower head is provided with a recessed portion, and the protruding portion and the recessed portion are matched to achieve alignment therebetween.

Preferably, it further comprises: a plurality of spacers, each spacer is located between the second screw and the mounting substrate, and is in contact with the second screw and the second surface of the mounting substrate respectively.

Preferably, the surface of the mounting substrate is not coated with an anodized coating and/or a yttrium oxide coating, except that the surface of the contact surface formed by contact with the gasket is coated with an anodized coating. and/or yttrium oxide coating; the pore walls of all the first pores are coated with anodized coating and/or yttrium oxide coating.

Preferably, an anodized coating and/or a yttrium oxide coating are coated on the surface of the electrode and the pore walls of all the second pores; the anodized coating and/or the yttrium oxide coating are the above insulating layers.

Preferably, the surface of the annular step of the upper ground ring is coated with an anodized coating and/or a yttrium oxide coating.

Preferably, it further comprises: an electrode joint and a flange, the electrode joint is arranged on one side of the electrode, and the flange is arranged on the side wall of the reaction chamber; the electrode joint is connected to the DC power supply arranged outside the reaction chamber through the flange.

Preferably, the thickness of the gas shower head ranges from 1 mm to 2 mm.

Preferably, the materials of the mounting substrate and the electrodes include: aluminum alloy.

Preferably, the insulating layer is located between the gas shower head and the mounting substrate, and the electrodes are embedded in the insulating layer.

In another aspect, the present invention further provides a working method of a plasma processing device, comprising: supplying a predetermined range of voltage to electrodes through a DC power supply, and accumulating electric charges between the electrodes and the mounting substrate and between the electrodes and the gas shower head to The adsorption force is generated, so that the mounting substrate, the electrode and the gas shower head are attached and fixed.

Preferably, before using the DC power supply to energize the electrode, it further comprises: moving the substrate to be processed into the reaction chamber; passing argon gas into the reaction chamber, and dissociating the argon gas into argon plasma to form a substrate containing the mounting substrate. , Upper grounding ring, argon plasma, gas shower head and DC circuit of electrode.

Preferably, after supplying a predetermined range of voltage to the electrodes through the DC power supply, the method further includes: delivering a process gas into the reaction chamber, and dissociating the process gas into plasma; using the plasma to process the substrate to be processed.

Compared with the prior art, the present invention has at least one of the following advantages:

In the plasma processing device provided by the present invention, the direct current is supplied to the electrodes through the direct current power supply, so that charges can be accumulated on the surfaces between the mounting substrate and the electrodes and between the electrodes and the gas shower head to generate strong static electricity The adsorption force makes the bonding between the mounting substrate and the electrode and between the electrode and the gas shower head. This adsorption force is relatively uniform, which makes the mounting substrate and the electrode and between the electrode and the gas shower head. Very solid. By controlling the voltage value of the external DC power supply, it is possible to ensure that there is sufficient electrostatic adsorption between the three, so that the mounting substrate, the electrode and the gas shower head can be closely attached, so that the three The heat conduction is better, thereby enabling better temperature control of the gas showerhead.

Further, since the mounting substrate and the electrode are both aluminum alloys, there will be no difference in deformation between the two.

Since the gas shower head and the electrode provided by the present invention are connected by electrostatic adsorption, it is not necessary to use screws to fix the installation substrate and the gas shower head, that is, the gas shower head does not require additional processing. Mechanical fixing structure, thus, the gas shower head can be made of a thinner silicon-based material sheet, and specifically, its thickness ranges from 1 mm to 2 mm. It can be seen that the gas shower head provided by the present invention has better flexibility. Even if the mounting substrate and the electrode are deformed during the temperature change process, they can stick to the electrode under the action of electrostatic adsorption to ensure the stability of heat conduction. Since the gas shower head adopts a thin silicon-based material sheet, the utilization rate of the silicon-based material can be further improved, and the preparation cost of the upper electrode can be reduced.

The side wall of the electrode provided by the present invention and the side wall of the mounting substrate are fixedly connected by a second fixing member, that is, the electrode is U-shaped, and the unique alignment of the air holes provided on the mounting substrate and the electrode is ensured through the arrangement of the screw holes of the side wall. .

The upper grounding ring provided by the present invention further includes a protruding portion, the protruding portion is located on the annular step, the gas shower head is provided with a recessed portion, and the protruding portion is matched with the recessed portion. With this configuration, the positioning of the gas shower head is realized, and the air hole of the gas shower head is ensured to be aligned with the second air hole on the electrode.

A plasma processing apparatus and a working method thereof proposed by the present invention will be further described in detail below with reference to FIGS. 1 to 7 and specific embodiments. The advantages and features of the present invention will become more apparent from the following description. It should be noted that the accompanying drawings are in a very simplified form and all use inaccurate scales, and are only used to facilitate and clearly assist the purpose of explaining the embodiments of the present invention. For the purpose, features and advantages of the present invention to be more clearly understood, please refer to the accompanying drawings. It should be noted that the structures, proportions, sizes, etc. shown in the drawings in this specification are only used to cooperate with the contents disclosed in the specification, so as to be understood and read by those with ordinary knowledge in the art, and are not used to limit the implementation of the present invention. Restricted conditions, it does not have technical substantive significance, any structural modification, proportional relationship change or size adjustment, without affecting the effect that the present invention can produce and the purpose that can be achieved, should still fall within the present invention. The disclosed technical content can cover the scope.

FIG. 1 is a schematic structural diagram of a plasma processing apparatus according to an embodiment of the present invention.

Please refer to FIG. 1 , the plasma processing apparatus includes: a reaction chamber 200 with an opening at the top and a base 100 at the bottom of the reaction chamber. The base 100 is used to carry the substrate 101 to be processed; the mounting substrate 501 is located in the opening; A first sealing structure 601 is provided between the substrate 501 and the opening for sealing the reaction chamber 200 . The electrode 502 is located under the mounting substrate 501; the gas shower head 300 is located under the electrode 502 and opposite to the base 100; the first insulating layer 511 is located between the mounting substrate 501 and the electrode 502; the second insulating layer 512, located between the electrode 502 and the gas shower head 300; the DC power supply 940, electrically connected to the electrode 502, to collect charges between the mounting substrate 501 and the electrode 502 and between the electrode 502 and the gas shower head 300, thereby generating Adsorption.

The gas buffer 800 is disposed above the mounting substrate 501, and a second sealing structure 602 is arranged between the gas buffer 800 and the mounting substrate 501, so that the gas buffer 800 and the first surface of the mounting substrate 501 form a closed space, It is used for buffering the reaction gas introduced from the gas pipeline of the gas source; the heater 910 is arranged around the periphery of the gas buffer 800; The heat is conducted to the gas shower head 300 through the thermal conductive sheet 920 , the mounting substrate 501 and the electrode 502 , so as to control the temperature of the gas shower head 300 .

In this embodiment, the electrode 502 has a U-shaped structure. Specifically, the electrode 502 includes a second bottom plate and a sidewall plate extending upward from the edge of the second bottom plate. The mounting substrate 501 includes: a first bottom plate and a first plate formed by the first bottom plate. The bottom plate extends outward from the edge of the carrier plate, the carrier plate is carried on the top of the reaction chamber 200 around the opening, the mounting substrate 501 is located inside the electrode 502, and the side wall of the electrode 502 and the side wall of the mounting substrate 501 are fixedly connected by a second fixing member . Preferably, the second fixing member is a plurality of first screws 701, and each first screw 701 penetrates the side wall of the electrode 502 and stops in the mounting substrate 501, that is, the first screw 701 is used to realize the space between the side wall plate and the first bottom plate. fixing and installation. The mounting substrate 501 is further provided with a second surface disposed opposite to the first surface, the mounting substrate 501 is provided with a plurality of first air holes 503 penetrating the first surface and the second surface at intervals, and the first end of each first air hole 503 is connected to The gas source of the reaction gas (that is, the gas buffer 800 is inserted into the closed space formed by the gas buffer member 800 and the first surface), and the second end thereof is communicated with the gas shower head 300 .

The electrode 502 is provided with an opposite third surface and a fourth surface, the second surface of the mounting substrate 501 is in contact with the third surface, the electrode 502 is provided with a plurality of second air holes 504 penetrating the third surface and the fourth surface at intervals, The first air holes 503 and the second air holes 504 are respectively disposed correspondingly. One end of each second air hole 504 is communicated with the second end of the first air hole 503 , and the other end is communicated with the gas shower head 300 . It can be seen that the electrode 502 provided in this embodiment is U-shaped, and the unique alignment of the mounting substrate 501 and the air holes provided on the electrode 502 is ensured through the arrangement of the screw holes of the sidewall (the sidewall flat plate).

Please continue to refer to FIGS. 2 to 4 , this embodiment further includes: an upper ground ring 400 , an annular step 4003 is provided on the inner edge of the upper ground ring 400 , the gas shower head 300 is located inside the upper ground ring 400 , and the edge of the upper ground ring 400 is mounted on the annular step 4003 On the step 4003 , the gas shower head 300 is fixed by fixing the upper ground ring 400 on the electrode 502 .

The upper ground ring 400 further includes a protruding portion 4002, the protruding portion 4002 is located on the annular step 4003, the gas shower head 300 is provided with a concave portion, and the protruding portion 4002 is matched with the concave portion to realize the matching between the two. allow.

A plurality of first through holes are arranged at intervals on the edge of the electrode 502 , and a plurality of blind holes 4001 are arranged at intervals on the outer edge of the upper ground ring 400 , and the first through holes and the blind holes 4001 are respectively arranged correspondingly. This embodiment further includes: a plurality of second screws 702 , each second screw 702 penetrates the first through hole and stops in the blind hole 4001 .

Please refer to FIG. 1 , which further includes: a plurality of spacers 703 , each spacer 703 is located between the second screw 702 and the mounting substrate 501 and is in contact with the second screw 702 and the second surface of the mounting substrate 501 , so as to A direct current loop is formed when the subsequent plasma processing device operates.

Please continue to refer to FIG. 1 , which further includes: an electrode joint 930 and a flange 900 , the electrode joint 930 is arranged on one side of the electrode 502 , and the flange 900 is arranged on the side wall of the reaction chamber 200 ; A DC power supply 940 is connected outside the reaction chamber 200 .

The materials of the mounting substrate 501 and the electrodes 502 include, but are not limited to, aluminum alloys.

Except that the surface of the mounting substrate 501 is not coated with an anodized coating and/or a yttrium oxide coating on the surface of the contact surface formed by contact with the spacer 703, the other surfaces are coated with an anodized coating and/or anodized coating. or yttrium oxide coating; and the pore walls of all the first pores 503 are coated with anodized coating and/or yttrium oxide coating. The surface of the electrode 502 and the walls of all the second pores 504 are coated with an anodized coating and/or a yttrium oxide coating. The surface of the annular step 4003 of the upper ground ring 400 is coated with an anodized coating and/or a yttrium oxide coating, thereby forming the first insulating layer 511 and the second insulating layer 512 . The thickness of the gas shower head 300 ranges from 1 mm to 2 mm. The silicon-based material for preparing the gas shower head 300 is polished on both sides.

It can be seen from this that by controlling the voltage value of the external DC power supply in this embodiment, sufficient electrostatic adsorption force can be ensured between the three, thereby ensuring that the heat conduction of the upper electrode is always in a stable state. Therefore, the mounting substrate, the electrode and the gas shower head can be closely attached, so that the heat conduction between the three is good, so that better temperature control of the gas shower head can be achieved.

Secondly, in this embodiment, since the mounting substrate and the electrodes are both made of aluminum alloys, there will be no difference in deformation between them. For the gas shower head, it does not require additional processing to form a mechanical fixing structure, and the thickness of the gas shower head ranges from 1 mm to 2 mm, that is, the gas shower head uses a thinner silicon-based material sheet, which has more good flexibility. Even if the mounting substrate and the electrode are deformed during the temperature change process, they can stick to the electrode under the action of electrostatic adsorption to ensure the stability of heat conduction. Since the gas shower head adopts a thinner silicon-based material sheet, the utilization rate of the silicon-based material can be further improved, and the preparation cost of the upper electrode can be reduced.

The side wall of the electrode provided in this embodiment and the side wall of the mounting substrate are fixedly connected by a second fixing member, that is, the electrode is U-shaped, and the arrangement of the screw holes on the side wall ensures that the mounting substrate and the air holes provided on the electrode are aligned. uniqueness.

The upper grounding ring provided in this embodiment further includes a protruding portion, the protruding portion is located on the annular step, the gas shower head is provided with a recessed portion, and the protruding portion matches the recessed portion. With this configuration, the positioning of the gas shower head is achieved, and the air hole of the gas shower head is ensured to be aligned with the second air hole on the electrode.

To sum up, in the embodiment shown in FIG. 1 , the entire upper electrode installation process includes: first, align the thin gas shower head with the protrusion on the upper ground ring, and install the gas shower head Place it in the upper grounding ring, then fix the upper grounding ring on the electrode through the second screw, and finally put a gasket on the second screw of the upper grounding ring and hoist the mounting substrate on the electrode through the first screw of the side wall , and connect the connector of the DC power supply of the mounting base to the electrode connector on the flange. Alignment at every step of the process improves installation accuracy and ensures final air hole alignment. On the other hand, all the mounting surfaces are on one side of the mounting base plate, and a thin gas shower head is used. Compared with the traditional gas shower head, it does not require mechanical hoisting and corresponding machining, and the installation difficulty is much reduced.

FIG. 5 is a schematic structural diagram of a plasma processing apparatus according to another embodiment of the present invention.

Please refer to FIG. 5 , in this embodiment, the electrode 502 is a plate-shaped structure, and the mounting substrate 501 is provided with a plurality of mounting through holes; the electrode 502 is provided with a plurality of mounting blind holes, and the mounting through holes and the mounting blind holes are respectively corresponding ; The first fixing member 711 is used to penetrate through the installation through hole and stop in the installation blind hole, so as to connect the installation substrate 501 and the electrode 502 fixedly. The first fixing member 711 may be a screw, but is not limited thereto.

FIG. 6 is a schematic structural diagram of an electrode of a plasma processing apparatus according to yet another embodiment of the present invention.

Referring to FIG. 6 , in this embodiment, the insulating layer 521 is located between the mounting substrate 501 and the gas shower head 300 , and the electrodes 522 are embedded in the insulating layer 521 .

The electrodes 522 are embedded in the insulating layer 521 . In this embodiment, the thickness of the insulating layer 521 is relatively thin, so that the mounting substrate 501 can better transfer heat to the gas shower head 300 . The insulating layer 521 further includes a screw rod 721 , and the screw rod 721 is screwed into the mounting substrate 501 to fix the electrode 522 on the mounting substrate 501 . The installation method of the upper ground ring and the insulating layer 521 is the same as the installation method of the upper ground ring 400 and the electrode 502 in the embodiment of FIG. 1 , and details are not described herein again.

Correspondingly, as shown in FIG. 7 , the present invention further provides a working method of a plasma processing device. The method is carried out in the plasma processing device as described above. The method includes the following steps: Step S1 , treating the substrate to be processed Move into the reaction chamber; pass argon gas into the reaction chamber, and dissociate the argon gas into argon gas plasma to form a direct current circuit including the mounting substrate, the upper ground ring, the argon gas plasma, the gas shower head and the electrode; step S2, provide a preset range of voltage to the electrodes through the DC power supply, and collect charges between the electrodes and the mounting substrate and between the electrodes and the gas shower head to generate an adsorption force, so that the mounting substrate, the electrode and the gas shower head Attaching and fixing; Step S3 , delivering process gas into the reaction chamber, and dissociating the process gas into plasma; and using plasma to process the substrate to be processed.

To sum up, the plasma processing device provided by this embodiment has charges accumulated on the surface between the mounting substrate and the electrode and between the electrode and the gas shower head to generate a strong electrostatic adsorption force, so that the mounting substrate and the Fixing between the electrodes and between the electrodes and the gas shower head makes the adsorption force more uniform, which makes the attachment between the mounting substrate, the electrode and the gas shower head very firm. By controlling the voltage value of the external DC power supply, it can be ensured that there is enough electrostatic adsorption force between the three, so that the heat conduction of the upper electrode can be kept in a stable state all the time. With this configuration, it is possible to achieve improved physical contact between the gas showerhead and subsequent electrodes, thereby achieving better temperature control. The use of electrostatic adsorption to realize the fixation between the mounting substrate and the electrode and between the electrode and the gas shower head can reduce the complexity of the installation.

It should be noted that, in this document, relational terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any relationship between these entities or operations. any such actual relationship or sequence exists. Moreover, the terms "comprising", "comprising" or any other variation thereof are intended to encompass non-exclusive inclusion such that a process, method, article or device comprising a list of elements not only includes those elements, but further includes not explicitly listed other elements, or further elements inherent to such a process, method, article or apparatus. Without further limitation, an element qualified by the statement "comprising a..." does not preclude the further presence of additional identical elements in the process, method, article or apparatus containing the element.

In the description of the present invention, it is understood that the terms "center", "height", "thickness", "upper", "lower", "vertical", "horizontal", "top", "bottom", The orientations or positional relationships indicated by "inner", "outer", "axial", "radial", "circumferential", etc. are based on the orientations or positional relationships shown in the drawings, and are only for the convenience of explaining the present invention and simplifying It is stated, rather than indicated or implied, that the device or element referred to must have a particular orientation or be constructed and operated in a particular orientation and therefore should not be construed as limiting the invention. In the description of the present invention, unless otherwise specified, "plurality" means two or more.

In the description of the present invention, unless otherwise expressly specified and limited, the terms "installed", "connected", "connected" and "fixed" should be understood in a broad sense, for example, it may be a fixed connection or a detachable connection , or integrated; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, and it can be an internal connection between two elements or an interaction relationship between the two elements. Those with ordinary knowledge in the art can understand the specific meanings of the above terms in the present invention according to specific situations.

In the present invention, unless otherwise expressly specified and limited, the first feature "on" or "under" the second feature may include the first feature and the second feature in direct contact, or may include the first feature and the second feature The two features are not in direct contact but are in contact through another feature between them. Also, the first feature being "above", "over" and "above" the second feature includes that the first feature is directly above and diagonally above the second feature, or simply means that the first feature is at a higher level than the second feature. The first feature "below", "below" and "below" the second feature includes that the first feature is directly and diagonally below the second feature, or simply means that the level of the first feature is less than that of the second feature.

Although the content of the present invention has been described in detail by way of the above preferred embodiments, it should be recognized that the above description should not be construed as limiting the present invention. Various modifications and alternatives to the present invention will be apparent to those of ordinary skill in the art upon reading the foregoing disclosure. Therefore, the protection scope of the present invention should be defined by the appended claims.

100: Pedestal 101: Substrate to be processed 200: reaction chamber 300: Gas sprinkler head 400: Upper ground ring 4001: Blind hole 4002: Projection 4003: Circular steps 501: Mounting the substrate 502: Electrodes 503: First air hole 504: Second air hole 511: first insulating layer 512: Second insulating layer 521: Insulation layer 522: Electrodes 601: The first sealing structure 602: Second sealing structure 701: First screw 702: Second screw 703: Gasket 711: First Fixture 721: Screw rod 800: Gas buffer 900: Flange 910: Heater 920: thermal conductive sheet 930: Electrode Connector 940: DC Power S1, S2, S3: Steps

FIG. 1 is a schematic structural diagram of a plasma processing apparatus according to an embodiment of the present invention; FIG. 2 is a top-view structural schematic diagram of an upper ground ring of a plasma processing apparatus according to an embodiment of the present invention; 3 is a schematic cross-sectional structural diagram of an upper ground ring of a plasma processing apparatus at a position of a protruding portion according to an embodiment of the present invention; FIG. 4 is a schematic cross-sectional structural diagram of an upper ground ring of a plasma processing apparatus provided in an embodiment of the present invention without a protruding portion; 5 is a schematic structural diagram of a plasma processing apparatus according to another embodiment of the present invention; FIG. 6 is a schematic structural diagram of an electrode of a plasma processing device according to yet another embodiment of the present invention; FIG. 7 is a flowchart of a working method of a plasma processing apparatus according to an embodiment of the present invention.

100: Pedestal

101: Substrate to be processed

200: reaction chamber

300: Gas sprinkler head

400: Upper ground ring

501: Mounting the substrate

502: Electrodes

503: First air hole

504: Second air hole

511: first insulating layer

512: Second insulating layer

601: The first sealing structure

602: Second sealing structure

701: First screw

702: Second screw

703: Gasket

800: Gas buffer

900: Flange

910: Heater

920: thermal conductive sheet

930: Electrode Connector

940: DC Power

Claims (22)

A plasma processing device, comprising: a reaction chamber, the top of which has an opening, and the bottom of which is provided with a base, the base is used to carry a substrate to be processed; a mounting substrate, located in the opening; a gas shower head, located below the mounting base plate and opposite to the base; an electrode located between the mounting substrate and the gas shower head; an insulating layer, respectively located between the mounting substrate and the electrode and between the gas shower head and the electrode; A DC power supply is electrically connected to the electrode, so that the gas shower head is adsorbed on the mounting substrate. The plasma processing device of claim 1, wherein the mounting substrate is provided with a plurality of mounting through holes; The electrode is provided with a plurality of blind installation holes, and the installation through holes correspond to the blind installation holes respectively; A first fixing member is used to penetrate through the installation through hole and stop in the installation blind hole, so as to fix the connection between the installation substrate and the electrode. The plasma processing apparatus of claim 1, wherein the electrode is a U-shaped structure, the mounting substrate is located inside the electrode, and a second fixing member is used to connect the sidewall of the electrode and the sidewall of the mounting substrate. The plasma processing apparatus of claim 3, wherein the second fixing member is a plurality of first screws, and each of the first screws penetrates the side wall of the electrode and stops in the mounting substrate. The plasma processing apparatus of claim 1, wherein the mounting substrate has a first surface and a second surface opposite to each other, and a plurality of first surfaces penetrating the first surface and the second surface are arranged on the mounting substrate at intervals. A gas hole, the first end of each first gas hole is connected to a gas source of reaction gas, and the second end of the first gas hole is connected with the gas shower head. The plasma processing apparatus according to claim 5, further comprising: a gas buffer, disposed above the mounting substrate and forming a closed space with the first surface, for buffering a gas pipe from the gas source The incoming reaction gas; A heater is arranged around the periphery of the gas buffer; a graphite heat-conducting sheet is arranged between the heater and the mounting substrate, The heat generated by the heater is conducted to the gas shower head through the graphite heat conducting sheet, the mounting substrate and the electrode, so as to control the temperature of the gas shower head. The plasma processing apparatus according to claim 5, wherein the electrode has a third surface and a fourth surface opposite to each other, the second surface is in contact with the third surface, and the electrode is provided with spaced through the third surface A plurality of second air holes on the surface and the fourth surface, the plurality of first air holes and the plurality of second air holes are respectively arranged correspondingly, one end of each second air hole is communicated with the second end of the first air hole, and the other One end is communicated with the gas shower head. The plasma processing device of claim 7, further comprising: an upper ground ring, an inner edge of the upper ground ring is provided with an annular step, the gas shower head is located inside the upper ground ring, and the edge is mounted on the upper ground ring On the annular step, the upper ground ring is fixed on the electrode to fix the gas shower head. The plasma processing device according to claim 8, wherein a plurality of first through holes are arranged at intervals on the edge of the electrode, a plurality of blind holes are arranged at intervals on the outer edge of the upper ground ring, and the plurality of first through holes are arranged at intervals on the outer edge of the upper ground ring. The holes are respectively arranged corresponding to the plurality of blind holes. The plasma processing apparatus of claim 9, further comprising: a plurality of second screws, each of the second screws penetrates the first through hole and stops in the blind hole. The plasma processing apparatus of claim 10, wherein the upper ground ring further comprises a protruding portion, the protruding portion is located on the annular step, the gas shower head is provided with a concave portion, the protruding portion and the The recesses are matched to achieve alignment between the two. The plasma processing apparatus of claim 11, further comprising: a plurality of spacers, each spacer is located between the second screw and the mounting substrate, and is respectively connected to the second screw and the mounting substrate second surface contact. The plasma processing device according to claim 12, wherein the surface of the mounting substrate is not coated with an anodized coating and/or yttrium oxide coating except for the surface of the contact surface formed by contacting the pad. Anodized coating and/or yttrium oxide coating are coated on the surface of all the first pores; anodized coating and/or yttrium oxide coating are coated on the pore walls of all the first pores. The plasma processing device as claimed in claim 13, wherein the electrode surface and the pore walls of all the second pores are coated with an anodized coating and/or a yttrium oxide coating; an anodized coating and/or The yttrium oxide coating is the insulating layer. The plasma processing apparatus of claim 14, wherein the surface of the annular step of the upper ground ring is coated with an anodized coating and/or a yttrium oxide coating. The plasma processing device according to claim 1, further comprising: an electrode joint and a flange, the electrode joint is arranged on one side of the electrode, the flange is arranged on the side wall of the reaction chamber; the electrode joint It is connected with the DC power supply arranged outside the reaction chamber through the flange. The plasma processing device according to claim 1, wherein the thickness of the gas shower head ranges from 1 mm to 2 mm. The plasma processing apparatus according to claim 1, wherein the material of the mounting substrate and the electrode comprises: an aluminum alloy. The plasma processing apparatus of claim 1, wherein the insulating layer is located between the gas shower head and the mounting substrate, and the electrode is embedded in the insulating layer. A working method of a plasma processing device, comprising: Provide a predetermined range of voltage to an electrode through a DC power supply, Charges are accumulated between the electrode and a mounting substrate and between the electrode and a gas shower head to generate adsorption force, so that the mounting substrate, the electrode and the gas shower head are attached and fixed. The working method of a plasma processing apparatus as claimed in claim 20, wherein Before using the DC power supply to energize the electrode, further comprising: moving a substrate to be processed into a reaction chamber and placing it on a base; An argon gas is introduced into the reaction chamber, and the argon gas is dissociated into an argon gas plasma to form a structure including the mounting substrate, an upper ground ring, the argon gas plasma, the gas shower head and the electrode the DC circuit. The working method of the plasma processing device as claimed in claim 20, wherein after supplying a predetermined range of voltage to the electrode through the DC power supply, further comprising: delivering a process gas into a reaction chamber and dissociating the process gas into plasma; A substrate to be treated is treated with plasma.

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