TW202227649A - Mask - Google Patents
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- TW202227649A TW202227649A TW110100699A TW110100699A TW202227649A TW 202227649 A TW202227649 A TW 202227649A TW 110100699 A TW110100699 A TW 110100699A TW 110100699 A TW110100699 A TW 110100699A TW 202227649 A TW202227649 A TW 202227649A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electroluminescent Light Sources (AREA)
- Electrodes For Cathode-Ray Tubes (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
本發明關於蒸鍍技術領域,尤其指一種遮罩。The present invention relates to the technical field of evaporation, in particular to a mask.
有機發光二極體(Organic Light Emitting Diode,OLED)是屬於電激發光元件(Electroluminescence,EL)領域,其具有廣視角、自發光、高亮度、高對比、操作溫度廣泛及反應速度快等優點,其製作方法一般是採用蒸鍍製程,將遮罩置於蒸鍍源與基板間,可將圖案實現至基板上;金屬遮罩(Fine metal mask, FMM)具有多個蒸鍍開口,通常透過蝕刻或電鑄而得,有機材料可以於蒸鍍製程中通過開口進而附著於基板上,利用機台機構施加張力與基板上方設置磁鐵,可將遮罩位移且固定至預期位置。Organic Light Emitting Diode (OLED) belongs to the field of Electroluminescence (EL), which has the advantages of wide viewing angle, self-luminescence, high brightness, high contrast, wide operating temperature and fast reaction speed. The manufacturing method generally adopts the evaporation process, and the mask is placed between the evaporation source and the substrate, and the pattern can be realized on the substrate; the fine metal mask (FMM) has a plurality of evaporation openings, usually through etching Or electroforming, the organic material can be attached to the substrate through the opening during the evaporation process, and the mask can be displaced and fixed to the desired position by applying tension through the machine mechanism and placing a magnet above the substrate.
然而,遮罩易受重力而下垂,造成像素圖型變形,同時遮罩與基板的間隙,易使有機材料外溢,導致混色與陰影效應(shadow effect)。施加張力過程中,會將遮罩往長方向兩側拉伸,此時遮罩容易受到設計圖形分布不同,造成應力分布不均使遮罩產生皺摺,因此目前急需一種應力均勻且不易皺摺的遮罩。However, the mask is prone to sag due to gravity, resulting in deformation of pixel patterns, and at the same time, the gap between the mask and the substrate is prone to overflow of organic materials, resulting in color mixing and shadow effects. In the process of applying tension, the mask will be stretched to both sides in the long direction. At this time, the mask is easily affected by the different distribution of design patterns, resulting in uneven stress distribution and wrinkles. Therefore, there is an urgent need for a uniform stress and not easy to wrinkle. 's mask.
本發明提供一種遮罩,其具有應力均勻及不易皺摺的優點。The present invention provides a mask, which has the advantages of uniform stress and not easy to wrinkle.
本發明所提供的遮罩,包括第一表面以及與第一表面相對的第二表面,且遮罩具有全蝕區、半蝕區以及周邊區,半蝕區連接全蝕區與周邊區,遮罩於全蝕區具有多個貫孔,各貫孔連通第一表面及第二表面,半蝕區具有多個第一半蝕槽,各第一半蝕槽自第一表面凹入。在第一半蝕槽中,最靠近全蝕區的第一半蝕槽的深度大於最靠近周邊區的第一半蝕槽的深度。The mask provided by the present invention includes a first surface and a second surface opposite to the first surface, and the mask has a total etch area, a half etch area and a peripheral area, and the half etch area connects the total etch area and the peripheral area, and the mask The cover has a plurality of through holes in the total etching area, each through hole communicates with the first surface and the second surface, the half etching area has a plurality of first half etching grooves, and each first half etching groove is recessed from the first surface. Among the first half-etched grooves, the depth of the first half-etched groove closest to the total etched region is greater than the depth of the first half-etched groove closest to the peripheral region.
在本發明的一實施例中,上述的遮罩中,兩相鄰的第一半蝕槽之間具有第一分隔壁。In an embodiment of the present invention, in the above-mentioned mask, a first partition wall is formed between two adjacent first half-etched grooves.
在本發明的一實施例中,上述的第一半蝕槽中,較靠近全蝕區的第一半蝕槽於第一表面的開口面積大於較靠近周圍區的第一半蝕槽於第一表面的開口面積。In an embodiment of the present invention, among the above-mentioned first half-etched grooves, the opening area of the first half-etched groove closer to the total etched area on the first surface is larger than that of the first half-etched groove closer to the surrounding area. The open area of the surface.
在本發明的一實施例中,上述的第一半蝕槽中,較靠近全蝕區的第一半蝕槽的深度大於較靠近周邊區的第一半蝕槽的深度。In an embodiment of the present invention, among the above-mentioned first half-etched grooves, the depth of the first half-etched grooves closer to the total etched region is greater than the depth of the first half-etched grooves closer to the peripheral region.
在本發明的一實施例中,上述的第一表面於周邊區之第一基準點與最靠近全蝕區的第一半蝕槽的底面上的第二基準點的連線的斜率的絕對值小於1In an embodiment of the present invention, the absolute value of the slope of the line connecting the first reference point of the first surface in the peripheral region and the second reference point on the bottom surface of the first half-etched groove closest to the total etch region less than 1
在本發明的一實施例中,上述的半蝕區於第一表面的第一開口率為0.1至0.9。In an embodiment of the present invention, the first aperture ratio of the half-etched region on the first surface is 0.1 to 0.9.
在本發明的一實施例中,上述的半蝕區具有多個第二半蝕槽,第二半蝕槽與第一半蝕槽相間隔,各第二半蝕槽自第二表面凹入,且在第二半蝕槽中,最靠近全蝕區的第二半蝕槽的深度大於最靠近周圍區的第二半蝕槽的深度。In an embodiment of the present invention, the above-mentioned half-etched region has a plurality of second half-etched grooves, the second half-etched grooves are spaced apart from the first half-etched grooves, and each second half-etched groove is recessed from the second surface, And in the second half-etched groove, the depth of the second half-etched groove closest to the total etched area is greater than the depth of the second half-etched groove closest to the surrounding area.
在本發明的一實施例中,上述的遮罩中,兩相鄰的第二半蝕槽之間具有第二分隔壁。In an embodiment of the present invention, in the above-mentioned mask, there is a second partition wall between two adjacent second half-etched grooves.
在本發明的一實施例中,上述的第二半蝕槽中,較靠近全蝕區的第二半蝕槽於第二表面的開口面積大於較靠近周圍區的第二半蝕槽於第二表面的開口面積。In an embodiment of the present invention, among the above-mentioned second half-etched grooves, the opening area of the second half-etched groove closer to the total etched area on the second surface is larger than that of the second half-etched groove closer to the surrounding area. The open area of the surface.
在本發明的一實施例中,上述的第二半蝕槽中,較靠近全蝕區的第二半蝕槽的深度大於較靠近周邊區的第二半蝕槽的深度。In an embodiment of the present invention, in the above-mentioned second half-etched grooves, the depth of the second half-etched grooves closer to the total etched region is greater than the depth of the second half-etched grooves closer to the peripheral region.
在本發明的一實施例中,上述的第二表面於周邊區之第三基準點與最靠近全蝕區的第二半蝕槽的底面上之第四基準點之連線的斜率的絕對值小於1In an embodiment of the present invention, the absolute value of the slope of the line connecting the third reference point of the second surface in the peripheral region and the fourth reference point on the bottom surface of the second half-etched groove closest to the total etch region less than 1
在本發明的一實施例中,上述的半蝕區於第二表面的第二開口率為0.1至0.9。In an embodiment of the present invention, the second aperture ratio of the half-etched region on the second surface is 0.1 to 0.9.
在本發明的遮罩於蒸鍍過程中,遮罩之兩端會被機台固定及拉伸,藉此將遮罩張開拉平。此時,遮罩所受到的拉伸應力主要會平行於第一方向,透過具有第一半蝕槽的半蝕區連接具有全蝕槽的全蝕區與周邊區以及最靠近全蝕區的第一半蝕槽的深度大於最靠近周邊區的第一半蝕槽的深度之設計,可避免拉伸應力於全蝕區產生應力不均的問題,從而降低遮罩在張開拉平時的皺褶起伏程度,達到改善遮罩皺褶問題的優點。During the vapor deposition process of the mask of the present invention, both ends of the mask are fixed and stretched by the machine, so that the mask is opened and flattened. At this time, the tensile stress on the mask is mainly parallel to the first direction, connecting the total etched area with the total etched groove and the peripheral area through the half etched area with the first half etched groove, and the second closest to the total etched area. The depth of the half-etched groove is greater than the depth of the first half-etched groove closest to the peripheral area, which can avoid the problem of uneven stress caused by tensile stress in the total etched area, thereby reducing the wrinkling of the mask when it is unfolded and stretched. The degree of undulation can achieve the advantage of improving the mask wrinkle problem.
為讓本發明之上述和其他目的、特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式,作詳細說明如下。In order to make the above-mentioned and other objects, features and advantages of the present invention more obvious and easy to understand, the following specific embodiments are given and described in detail in conjunction with the accompanying drawings.
圖1為本發明一實施例的遮罩的局部上視示意圖。圖2為圖1中X區域的放大示意圖。圖3為沿圖2中A-A’剖面線的剖面示意圖。如圖1至3所示,本發明的遮罩100包括第一表面110以及第二表面120,第一表面110與第二表面120相對,且遮罩100具有全蝕區130、半蝕區140以及周邊區150,半蝕區140連接全蝕區130與周邊區150,遮罩100於全蝕區130具有多個貫孔131,各貫孔131連通第一表面110及第二表面120,半蝕區140具有多個第一半蝕槽141,各第一半蝕槽141自第一表面110凹入。在多個第一半蝕槽141中,最靠近全蝕區130的第一半蝕槽141的深度T1大於最靠近周邊區150的第一半蝕槽141的深度T1。在本發明中,遮罩100的材質例如但不限於鎳合金。FIG. 1 is a schematic partial top view of a mask according to an embodiment of the present invention. FIG. 2 is an enlarged schematic view of the X area in FIG. 1 . Fig. 3 is a schematic cross-sectional view along the section line A-A' in Fig. 2 . As shown in FIGS. 1 to 3 , the
上述的遮罩100可具有多個圖案區101以及無圖案區102。在本實施例中,如圖1及2所示,各圖案區101包括一個全蝕區130及一個半蝕區140,無圖案區102包括多個周邊區150,各周邊區150圍繞各圖案區101。遮罩100的多個圖案區101沿第一方向D1接續間隔排列(即遮罩100為長條狀遮罩100,圖案區101排列成條狀),各圖案區101的半蝕區140圍繞相應的全蝕區130,無圖案區102的各周邊區150圍繞相應的半蝕區140,進一步來說,各圖案區101具有外邊界1011及內邊界1012,外邊界1011與相應的周邊區150連接,內邊界1012環繞的區域為全蝕區130,外邊界1011與內邊界1012之間的區域為半蝕區140。此外,在第一方向D1上各圖案區101的內邊界1012與外邊界1011之間的最短距離e大於零,在第二方向D2上各圖案區101的內邊界1012與外邊界1011之間的最短距離f大於零,在第一方向D1及第二方向D2上各圖案區101的內邊界1012與外邊界1011之間的最短距離e、f可相同或相異,藉此使半蝕區140圍繞全蝕區130。另外,在本發明中,第一半蝕槽141的深度T1為第一表面110至第一半蝕槽141的底面1411之間的垂直距離。The above-mentioned
本實施例的遮罩100於蒸鍍過程中,遮罩100之兩端103a、103b會被機台固定及拉伸,藉此將遮罩100張開拉平。此時,遮罩100所受到的拉伸應力主要會平行於第一方向D1,透過具有第一半蝕槽141的半蝕區140連接具有貫孔131的全蝕區130與周邊區150以及最靠近全蝕區130的第一半蝕槽141的深度T1大於最靠近周邊區150的第一半蝕槽141的深度T2之設計,可避免拉伸應力於全蝕區130產生應力不均的問題,從而降低遮罩100皺褶起伏程度並改善遮罩100皺褶問題。During the evaporation process of the
在圖1及2所示的實施例中所雖然是以一個半蝕區140圍繞一個全蝕區130以及多個圖案區101沿第一方向D1接續間隔排列作為例示;但在其他實施例中,各圖案區101也可包括一個半蝕區140以及兩個或兩個以上的全蝕區130,半蝕區140同時圍繞兩個或兩個以上的全蝕區130,且多個圖案區101可沿第二方向D2接續間隔排列(即圖案區101排列成條狀)或者同時沿第一方向D1及第二方向D2間隔排列(即圖案區101排列呈陣列)。In the embodiments shown in FIGS. 1 and 2 , it is exemplified that a half-
上述的半蝕區140中,兩相鄰的第一半蝕槽141之間具有第一分隔壁142。在本發明中,第一半蝕槽141及第一分隔壁142是經由蝕刻技術對第一表面110進行蝕刻所形成,第一分隔壁142的頂面1421在較佳情況下可不受蝕刻影響而與第一表面110切齊,但在其他情況下第一分隔壁142的頂面1421也可能受到蝕刻影響而低於第一表面110。據此,在一實施例中,如圖3所示,第一分隔壁142的頂面1421可與第一表面110切齊;但在一實施例中,第一分隔壁142的頂面1421可低於第一表面110,即第一分隔壁142的頂面1421位於第一表面110與其所鄰接的第一半蝕槽141的底面1411之間。In the above-mentioned half-
上述的各第一半蝕槽141於第一表面110具有開口面積。在本發明中,第一半蝕槽141於第一表面110的開口面積可為相同或不同,且第一半蝕槽141於第一表面110的開口形狀可為如正方形、圓形、矩形等幾何形狀或非幾何形狀。在一實施例中,如圖2所示,第一半蝕槽141於第一表面110的開口面積為相同,且第一半蝕槽141於第一表面110的開口形狀為正方形。另外,在本發明中,全蝕區130的貫孔131於第一表面110的開口形狀可為如圓形、矩形等幾何形狀或非幾何形狀,且全蝕區130的貫孔131於第一表面110的開口形狀可與第一半蝕槽141於第一表面110的開口形狀相同或相異,全蝕區130的貫孔131於第一表面110的開口面積可依需求設計,全蝕區130的貫孔131與半蝕區140的第一半蝕槽141之排列方式可為相同或不同,本發明對於貫孔131於第一表面110的開口形狀、開口面積以及排列方式不予以特別限制。Each of the above-mentioned first half-
上述的第一半蝕槽141中,較靠近全蝕區130的第一半蝕槽141的深度T1大於較靠近周邊區150的第一半蝕槽141的深度T1。在一實施例中,如圖3所示,從全蝕區130往周邊區150,第一半蝕槽141的深度T1遞減,最靠近全蝕區130的第一半蝕槽141的深度T1最大。此外,第一表面110於周邊區150之第一基準點P1與最靠近全蝕區130的第一半蝕槽141的底面1411上之第二基準點P2之連線L1的斜率的絕對值小於1,即從遮罩100整體厚度最薄處至最厚處之連線的斜率的絕對值小於1。In the above-mentioned first half-etched
圖4為本發明一實施例的遮罩的剖面示意圖。在一實施例中,如圖4所示,半蝕區140還具有多個第二半蝕槽143,第二半蝕槽143與第一半蝕槽141上下相間隔,各第二半蝕槽143自該第二表面120凹入,且在第二半蝕槽143中,最靠近全蝕區130的第二半蝕槽143的深度T2大於最靠近周圍區的第二半蝕槽143的深度T2,即第二表面120至最靠近全蝕區130的第二半蝕槽143的底面1431之間的垂直距離大於第二表面120至最靠近周圍區的第二半蝕槽143的底面1431之間的垂直距離。此外,在本發明中,第二半蝕槽143的深度T2與第一半蝕槽141之深度T1可為相同或不同。4 is a schematic cross-sectional view of a mask according to an embodiment of the present invention. In one embodiment, as shown in FIG. 4 , the half-
上述的半蝕區140中,兩相鄰的第二半蝕槽143之間具有第二分隔壁144。在本發明中,第二半蝕槽143及第二分隔壁144是經由蝕刻技術對第二表面120進行蝕刻所形成,第二分隔壁144的頂面1441在較佳情況下可不受蝕刻影響而與第二表面120切齊,但在其他情況下第二分隔壁144的頂面1441也可能受到蝕刻影響而低於第二表面120。據此,在一實施例中,如圖4所示,第二分隔壁144的頂面1441可與第二表面120切齊;但在一實施例中,第二分隔壁144的頂面1441可低於第二表面120,即第二分隔壁144的頂面1441位於第二表面120與其所鄰接的第二半蝕槽143的底面1431之間。In the above-mentioned half-etched
上述的各第二半蝕槽143於第二表面120具有開口面積。在本發明中,第二半蝕槽143於第二表面120的開口面積可為相同或不同,且第二半蝕槽143於第二表面120的開口形狀可為如圓形、矩形等幾何形狀或非幾何形狀。在一實施例中,第二半蝕槽143於第二表面120的開口面積為相同,且第二半蝕槽143於第二表面120的開口形狀為正方形。此外,在本發明中,第二半蝕槽143於第二表面120的開口面積及開口形狀與第一半蝕槽141於第一表面110的開口面積及開口形狀可為相同或不同。另外,在本發明中,全蝕區130的貫孔131於第二表面120的開口形狀可為如圓形、矩形等幾何形狀或非幾何形狀,且全蝕區130的貫孔131於第二表面120的開口形狀可與第二半蝕槽143於第二表面120的開口形狀相同或相異,全蝕區130的貫孔131於第二表面120的開口面積可依需求設計,全蝕區130的貫孔131與半蝕區140的第二半蝕槽143之排列方式可為相同或不同。Each of the above-mentioned second half-etched
上述的第二半蝕槽143中,較靠近全蝕區130的第二半蝕槽143的深度T2大於較靠近周邊區150的第二半蝕槽143的深度T2。在一實施例中,如圖4所示,從全蝕區130往周邊區150,第二半蝕槽143的深度T2遞減,最靠近全蝕區130的第二半蝕槽143具有最大深度。此外,第二表面120於周邊區150之第三基準點P3與最靠近全蝕區130的第二半蝕槽143的底面1431上之第四基準點P4之連線L2的斜率的絕對值小於1。In the above-mentioned second half-etched
圖5為本發明一實施例的遮罩的剖面示意圖。在本發明中,上述的第二半蝕槽143排列位置與第一半蝕槽141的排列位置可為彼此相對或交錯。圖4是以第二半蝕槽143排列位置與第一半蝕槽141的排列位置彼此相對作為例示,圖5是以第二半蝕槽143排列位置與第一半蝕槽141的排列位置彼此交錯作為例示。5 is a schematic cross-sectional view of a mask according to an embodiment of the present invention. In the present invention, the arrangement position of the second half-etched
圖6為本發明一實施例的遮罩的局部上視(下視)示意圖。在本發明中,上述的第一半蝕槽141於第一表面110的開口面積及開口形狀可為相同或不同。在一實施例中,如圖2所示,第一半蝕槽141於第一表面110的開口形狀皆為正方形,且第一半蝕槽141於第一表面110的開口面積為相同。在一實施例中,如圖6所示,第一半蝕槽141於第一表面110的開口形狀皆為正方形,第一半蝕槽141於第一表面110的開口面積為不相同,舉例來說,較靠近全蝕區130的第一半蝕槽141於第一表面110的開口面積大於較靠近周邊區150的第一半蝕槽141於第一表面110的開口面積。FIG. 6 is a partial top view (bottom view) schematic diagram of a mask according to an embodiment of the present invention. In the present invention, the above-mentioned opening area and opening shape of the first half-etched
此外,在本發明中,上述的第二半蝕槽143於第二表面120的開口面積及開口形狀可為相同或不同。在一實施例中,第二半蝕槽143於第二表面120的開口形狀皆為正方形,且第二半蝕槽143於第二表面120的開口面積為相同。在一實施例中,如圖6所示,第二半蝕槽143於第二表面120的開口形狀皆為正方形,但第二半蝕槽143於第二表面120的開口面積為不相同,舉例來說,較靠近全蝕區130的第二半蝕槽143於第二表面120的開口面積大於較靠近周邊區150的第二半蝕槽143於第二表面120的開口面積。In addition, in the present invention, the above-mentioned opening area and opening shape of the second half-etched
圖7為本發明一實施例的遮罩的半蝕區的局部上視(下視)示意圖。圖8為本發明一實施例的遮罩的半蝕區的局部上視(下視)示意圖。圖9為本發明一實施例的遮罩的半蝕區的局部上視(下視)示意圖。在本發明中,上述的半蝕區140於第一表面110具有第一開口率,第一開口率即第一表面110的單位面積Y1中所含有的第一半蝕槽141於第一表面110的開口面積的比例,第一開口率例如為0.1至0.9。在一實施例中,如圖7所示,半蝕區140於第一表面110的第一開口率為0.22;在此實施例中,舉例來說,第一半蝕槽141於第一表面110的開口形狀大致呈矩形,沿第一方向D1排列的第一側邊1412及第二側邊1413的間距例如為0.04長度單位,沿第二方向D2排列的第三側邊1414及第四側邊1415的間距例如為0.03長度單位,第一側邊1412與第三側邊1414、第一側邊1412與第四側邊1415、第二側邊1413與第三側邊1414以及第二側邊1413與第四側邊1415之間形成導角1416,導角1416的曲率半徑例如為0.012長度單位,沿第一方向D1排列的兩相鄰第一半蝕槽141的中心C1的間距例如為0.11392長度單位,沿第二方向D2排列的兩相鄰第一半蝕槽141的中心C1的間距例如為0.08544長度單位,兩最靠近的第一半蝕槽141的間距例如為0.031長度單位。在一實施例中,如圖8所示,半蝕區140於第一表面110的第一開口率為0.33;在此實施例中,舉例來說,第一半蝕槽141於第一表面110的開口形狀大致呈正方形,沿第一方向D1排列的第一側邊1412及第二側邊1413的間距例如為0.04長度單位,沿第二方向D2排列的第三側邊1414及第四側邊1415的間距例如為0.04長度單位,第一側邊1412與第三側邊1414、第一側邊1412與第四側邊1415、第二側邊1413與第三側邊1414以及第二側邊1413與第四側邊1415之間形成導角1416,導角1416的曲率半徑例如為0.012長度單位,沿第一方向D1排列的兩相鄰第一半蝕槽141的中心C1的間距例如為0.11392長度單位,沿第二方向D2排列的兩相鄰第一半蝕槽141的中心C1的間距例如為0.08544長度單位,兩最靠近的第一半蝕槽141的間距例如為0.025長度單位。在一實施例中,如圖9所示,半蝕區140於第一表面110的第一開口率為0.46;在此實施例中,舉例來說,第一半蝕槽141於第一表面110的開口形狀大致呈矩形,沿第一方向D1排列的第一側邊1412及第二側邊1413的間距例如為0.04長度單位,沿第二方向D2排列的第三側邊1414及第四側邊1415的間距例如為0.06長度單位,第一側邊1412與第三側邊1414、第一側邊1412與第四側邊1415、第二側邊1413與第三側邊1414以及第二側邊1413與第四側邊1415之間形成導角1416,導角1416的曲率半徑例如為0.012長度單位,沿第一方向D1排列的兩相鄰第一半蝕槽141的中心C1的間距例如為0.11392長度單位,沿第二方向D2排列的兩相鄰第一半蝕槽141的中心C1的間距例如為0.08544長度單位,兩最靠近的第一半蝕槽141的間距例如為0.018長度單位。FIG. 7 is a partial top view (bottom view) schematic diagram of a semi-etched region of a mask according to an embodiment of the present invention. FIG. 8 is a partial top view (bottom view) schematic diagram of a semi-etched region of a mask according to an embodiment of the present invention. FIG. 9 is a partial top view (bottom view) schematic diagram of a semi-etched region of a mask according to an embodiment of the present invention. In the present invention, the above-mentioned half-etched
在本發明中,上述的半蝕區140於第二表面120具有第二開口率,第二開口率第二表面120的單位面積Y2中所含有的第二半蝕槽143於第二表面120的開口面積的比例,第二開口率例如為0.1至0.9。在一實施例中,如圖7所示,半蝕區140於第二表面120的第二開口率為0.22;在此實施例中,舉例來說,第二半蝕槽143於第二表面120的開口形狀大致呈矩形,沿第一方向D1排列的第一側邊1432及第二側邊1433的間距例如為0.04長度單位,沿第二方向D2排列的第三側邊1434及第四側邊1435的間距例如為0.03長度單位,第一側邊1432與第三側邊1434、第一側邊1432與第四側邊1435、第二側邊1433與第三側邊1434以及第二側邊1433與第四側邊1435之間形成導角1436,導角1436的曲率半徑例如為0.012長度單位,沿第一方向D1排列的兩相鄰第二半蝕槽143的中心C2的間距例如為0.11392長度單位,沿第二方向D2排列的兩相鄰第二半蝕槽143的中心C2的間距例如為0.08544長度單位,兩最靠近的第二半蝕槽143的間距例如為0.031長度單位。在一實施例中,如圖8所示,半蝕區140於第二表面120的第二開口率為0.33;在此實施例中,舉例來說,第二半蝕槽143於第二表面120的開口形狀大致呈正方形,沿第一方向D1排列的第一側邊1432及第二側邊1433的間距例如為0.04長度單位,沿第二方向D2排列的第三側邊1434及第四側邊1435的間距例如為0.04長度單位,第一側邊1432與第三側邊1434、第一側邊1432與第四側邊1435、第二側邊1433與第三側邊1434以及第二側邊1433與第四側邊1435之間形成導角1436,導角1436的曲率半徑例如為0.012長度單位,沿第一方向D1排列的兩相鄰第二半蝕槽143的中心C2的間距例如為0.11392長度單位,沿第二方向D2排列的兩相鄰第二半蝕槽143的中心C2的間距例如為0.08544長度單位,兩最靠近的第二半蝕槽143的間距例如為0.025長度單位。在一實施例中,如圖9所示,半蝕區140於第二表面120的第二開口率為0.46;在此實施例中,舉例來說,第二半蝕槽143於第二表面120的開口形狀大致呈矩形,沿第一方向D1排列的第一側邊1432及第二側邊1433的間距例如為0.04長度單位,沿第二方向D2排列的第三側邊1434及第四側邊1435的間距例如為0.06長度單位,第一側邊1432與第三側邊1434、第一側邊1432與第四側邊1435、第二側邊1433與第三側邊1434以及第二側邊1433與第四側邊1435之間形成導角1436,導角1436的曲率半徑例如為0.012長度單位,沿第一方向D1排列的兩相鄰第二半蝕槽143的中心C2的間距例如為0.11392長度單位,沿第二方向D2排列的兩相鄰第二半蝕槽143的中心C2的間距例如為0.08544長度單位,兩最靠近的第二半蝕槽143的間距例如為0.018長度單位。In the present invention, the above-mentioned half-etched
上述對於第一半蝕槽於第一表面的開口尺寸以及第二半蝕槽於第二表面的開口尺寸的描述僅為舉例說明,本發明的第一半蝕槽於第一表面的開口尺寸以及第二半蝕槽於第二表面的開口尺寸不僅限於上述說明。The above description of the size of the opening of the first half-etched groove on the first surface and the size of the opening of the second half-etched groove on the second surface are only examples. The size of the opening of the first half-etched groove on the first surface and The size of the opening of the second half-etched groove on the second surface is not limited to the above description.
綜上所述,本發明實施例的遮罩於蒸鍍過程中,遮罩的兩端會被機台固定及拉伸,藉此將遮罩張開拉平。此時,遮罩所受到的拉伸應力主要會平行於第一方向,透過具有第一半蝕槽的半蝕區連接具有全蝕槽的全蝕區與周邊區以及最靠近全蝕區的第一半蝕槽的深度大於最靠近周邊區的第一半蝕槽的深度的設計,可避免拉伸應力於全蝕區產生應力不均的問題,從而降低遮罩皺褶起伏程度並改善遮罩皺褶問題。To sum up, during the evaporation process of the mask according to the embodiment of the present invention, both ends of the mask are fixed and stretched by the machine, thereby opening and leveling the mask. At this time, the tensile stress on the mask is mainly parallel to the first direction, connecting the total etched area with the total etched groove and the peripheral area through the half etched area with the first half etched groove, and the second closest to the total etched area. The design that the depth of the half-etched groove is greater than the depth of the first half-etched groove closest to the peripheral area can avoid the problem of uneven stress caused by tensile stress in the total etched area, thereby reducing the wrinkle and undulation of the mask and improving the mask. wrinkle problem.
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,本發明所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作些許之更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。Although the present invention has been disclosed as above with examples, it is not intended to limit the present invention. Those with ordinary knowledge in the technical field to which the present invention pertains can make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention should be determined by the scope of the appended patent application.
100:遮罩
101:圖案區
1011:外邊界
1012:內邊界
102:無圖案區
103a、103b:端
110:第一表面
120:第二表面
130:全蝕區
131:貫孔
140:半蝕區
141:第一半蝕槽
1411:底面
1412:第一側邊
1413:第二側邊
1414:第三側邊
1415:第四側邊
1416:導角
142:第一分隔壁
1421:頂面
143:第二半蝕槽
1431:底面
1432:第一側邊
1433:第二側邊
1434:第三側邊
1435:第四側邊
1436:導角
144:第二分隔壁
1441:頂面
150:周邊區
A-A’:剖面線
C1、C2:中心
D1:第一方向
D2:第二方向
e、f:距離
L1、L2:連線
P1:第一基準點
P2:第二基準點
P3:第三基準點
P4:第四基準點
T1、T2:深度
X:區域
Y1、Y2:單位面積
100:Mask
101: Pattern area
1011: Outer Boundary
1012: Inner Boundary
102: No
圖1為本發明一實施例的遮罩的局部上視示意圖; 圖2為圖1中X區域的放大示意圖; 圖3為沿圖2中A-A’剖面線的剖面示意圖; 圖4為本發明一實施例的遮罩的剖面示意圖; 圖5為本發明一實施例的遮罩的剖面示意圖; 圖6為本發明一實施例的遮罩的局部上視示意圖; 圖7為本發明一實施例的遮罩的半蝕區的局部上視(下視)示意圖; 圖8為本發明一實施例的遮罩的半蝕區的局部上視(下視)示意圖; 圖9為本發明一實施例的遮罩的半蝕區的局部上視(下視)示意圖。 1 is a partial top view schematic diagram of a mask according to an embodiment of the present invention; Fig. 2 is the enlarged schematic diagram of X area in Fig. 1; Fig. 3 is a schematic cross-sectional view along A-A' section line in Fig. 2; 4 is a schematic cross-sectional view of a mask according to an embodiment of the present invention; 5 is a schematic cross-sectional view of a mask according to an embodiment of the present invention; 6 is a partial top view schematic diagram of a mask according to an embodiment of the present invention; 7 is a partial top view (bottom view) schematic diagram of a semi-etched region of a mask according to an embodiment of the present invention; 8 is a schematic partial top view (bottom view) of a semi-etched region of a mask according to an embodiment of the present invention; FIG. 9 is a partial top view (bottom view) schematic diagram of a semi-etched region of a mask according to an embodiment of the present invention.
110:第一表面 110: First surface
120:第二表面 120: Second surface
130:全蝕區 130: Total Eclipse Zone
131:貫孔 131: Through hole
140:半蝕區 140: Half Eclipse Zone
141:第一半蝕槽 141: The first half-etched groove
1411:底面 1411: Bottom
142:第一分隔壁 142: First dividing wall
1421:頂面 1421: Top surface
150:周邊區 150: Surrounding area
D1:第一方向 D1: first direction
D2:第二方向 D2: Second direction
L1:連線 L1: connection
P1:第一基準點 P1: The first reference point
P2:第二基準點 P2: Second reference point
T1:深度 T1: Depth
Claims (12)
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TW110100699A TWI757041B (en) | 2021-01-08 | 2021-01-08 | Mask |
CN202110557138.1A CN113403573B (en) | 2021-01-08 | 2021-05-21 | Mask cover |
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TW202227649A true TW202227649A (en) | 2022-07-16 |
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CN114716154B (en) * | 2022-04-15 | 2023-05-12 | 业成科技(成都)有限公司 | Shield assembly |
CN114645246B (en) * | 2022-05-23 | 2022-10-21 | 浙江众凌科技有限公司 | Metal shade |
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KR101820020B1 (en) * | 2011-04-25 | 2018-01-19 | 삼성디스플레이 주식회사 | Mask frame assembly for thin film deposition |
JP6086305B2 (en) * | 2013-01-11 | 2017-03-01 | 大日本印刷株式会社 | Vapor deposition mask manufacturing method and vapor deposition mask |
CN105102668B (en) * | 2013-03-26 | 2019-02-19 | 大日本印刷株式会社 | Deposition mask, deposition mask prepare body, the manufacturing method of deposition mask and the manufacturing method of organic semiconductor device |
CN104062842B (en) * | 2014-06-30 | 2019-02-15 | 上海天马有机发光显示技术有限公司 | A kind of mask plate and its manufacturing method, process unit |
KR102278606B1 (en) * | 2014-12-19 | 2021-07-19 | 삼성디스플레이 주식회사 | Mask frame assembly, and apparatus for deposition comprising the same and manufacturing method of organic light emitting display device using the same |
CN106381464A (en) * | 2015-07-28 | 2017-02-08 | 昆山国显光电有限公司 | General metal mask plate and manufacturing method thereof |
JP6851820B2 (en) * | 2016-12-28 | 2021-03-31 | マクセルホールディングス株式会社 | Thin-film deposition mask and its installation method and manufacturing method |
KR20190014272A (en) * | 2017-07-31 | 2019-02-12 | 삼성디스플레이 주식회사 | Manufacturing method of display device |
CN109423600B (en) * | 2017-08-25 | 2020-01-07 | 京东方科技集团股份有限公司 | Mask strip, preparation method thereof and mask plate |
CN107435131B (en) * | 2017-09-29 | 2019-08-02 | 上海天马微电子有限公司 | Mask device, evaporated device and mask device preparation method |
KR20190055910A (en) * | 2017-11-16 | 2019-05-24 | 엘지이노텍 주식회사 | A deposition mask and method for manufacturing of the same |
CN108642440B (en) * | 2018-05-14 | 2019-09-17 | 昆山国显光电有限公司 | Mask plate and mask assembly |
KR102642138B1 (en) * | 2018-09-04 | 2024-03-04 | 엘지이노텍 주식회사 | A deposition mask and method for manufacturing of the same |
CN110760790A (en) * | 2019-02-28 | 2020-02-07 | 云谷(固安)科技有限公司 | Mask plate and mask assembly |
KR101984112B1 (en) * | 2019-03-18 | 2019-05-31 | (주)세우인코퍼레이션 | manufacturing methods of Gap Mask with two-step etching system |
CN112176279A (en) * | 2019-07-02 | 2021-01-05 | 旭晖应用材料股份有限公司 | Metal shade |
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