TW202224002A - Plating device and plating processing method to suppress the quality deterioration of a wafer plating resulting from a process gas remaining on an undersurface of a separation membrane - Google Patents

Abstract

The present invention provides a technique that suppresses the quality deterioration of a wafer plating resulting from a process gas remaining on an undersurface of a separation membrane. A plating device 1000 comprises: a plating tank 10 having an anode chamber 13 in which an anode 11 is disposed; and a wafer clamp 30 allocated on the wafer Wf that is disposed further above the anode chamber and is kept as a cathode, wherein the anode has a cylindrical shape that extends in an up-down direction. The plating device further comprises: a gas storage part 60 in which the anode chamber is arranged so as to form a space with respect to the anode and covers the upper end, outer circumference, and inner circumferential surface of the anode for storing a process gas generated by the anode; and a discharging mechanism 70, which discharges the process gas stored in the gas storage part to the outside of the plating tank.

Description

Plating apparatus and plating treatment method

The present invention relates to a plating device and a plating treatment method.

Conventionally, a so-called cup-type plating apparatus is known as a plating apparatus for applying a plating treatment to a substrate (for example, refer to Patent Document 1). Such a plating apparatus includes a plating tank, a separator is arranged, and an anode is arranged in an anode chamber separated from the lower side of the separator, and a substrate holder is arranged above the anode chamber and holds a substrate serving as a cathode. In addition, in such a conventional plating apparatus, the anode has a flat plate shape extending in the horizontal direction.

In addition, Patent Document 2 is cited as another prior art document concerning the present invention. Here, Patent Document 2 discloses a technique regarding an anode cover. Specifically, this patent document 2 discloses a plating apparatus including: an anode cover having an opening through which electricity flows between the anode and a substrate; and a mechanism for changing the size of the opening (referred to as an opening variable mechanism). ). According to such a plating apparatus, the size of the opening of the anode cover can be changed by the opening variable mechanism, so that the formation state of the electric field formed between the anode and the substrate can be changed.

[Prior Art Literature] [Patent Literature] [Patent Document 1] Japanese Patent Laid-Open No. 2008-19496 [Patent Document 2] Japanese Patent Laid-Open No. 2017-137519

[Problems to be Solved by Invention] In the conventional cup-type plating apparatus exemplified in the above-mentioned Patent Document 1, there is a possibility that the process gas generated from the anode during the plating treatment may remain on the lower surface of the separator. In this case, there is a possibility that the plating quality of the substrate may be deteriorated due to the process gas.

The present invention has been made in view of the above-mentioned problems, and an object of the present invention is to provide a technology that can suppress the deterioration of the plating quality of the substrate caused by the process gas retained on the lower surface of the diaphragm.

[means to solve the problem] (Aspect 1) In order to achieve the above object, a plating apparatus according to an aspect of the present invention includes: a plating tank in which a separator is arranged, and an anode is arranged in an anode chamber separated from the lower side of the separator; The anode chamber is further above and holds a substrate serving as a cathode, wherein the anode has a cylindrical shape extending in an up-down direction, and the plating apparatus further includes: a gas storage part provided with an anode chamber so as to have a space between the anode and the anode. The space covers the upper end, outer periphery and inner periphery of the anode to store the process gas generated from the anode; and a discharge mechanism discharges the process gas stored in the gas storage part to the outside of the coating tank.

According to this aspect, the process gas generated by the cylindrical anode extending in the vertical direction is stored in the gas storage portion, and the stored process gas can be discharged to the outside of the coating tank by the discharge mechanism. Thereby, since the process gas retained on the lower surface of the diaphragm can be suppressed, the deterioration of the plating quality of the substrate caused by the process gas can be suppressed.

(Aspect 2) The above aspect 1 may further include an anode cover disposed in the anode chamber and having an opening through which electricity flows between the anode and the substrate, and an anode moving mechanism that moves the anode in the vertical direction.

According to this aspect, the formation state of the electric field formed between the substrate and the anode can be changed by moving the anode in the vertical direction. In addition, since the formation state of the electric field can be changed with a simple mechanism for moving the anode in the vertical direction, plating can be suppressed compared with the case where the plating apparatus is provided with an opening variable mechanism for changing the size of the opening of the anode cover. The device structure is complicated.

(Aspect 3) In the above aspect 2, the anode cover may be arranged so that the upper surface of the anode cover is in contact with the lower surface of the separator.

(Aspect 4) In the above-mentioned aspect 2, the anode cover may be arranged so that a space is formed between the upper surface of the anode cover and the lower surface of the separator.

(Aspect 5) In the above aspect 2, the anode moving mechanism is connected to the anode via a first connection member, the anode is moved in the up-down direction by moving the first connection member in the up-down direction, and the anode cover is connected via the second connection The member is connected to the first connecting member, and the anode moving mechanism may be configured to move together with the anode after moving the first connecting member.

(Aspect 6) Furthermore, in order to achieve the above-mentioned object, a plating treatment method according to an aspect of the present invention is a plating treatment method using a plating apparatus including a plating tank and a separator disposed thereon, which is further than the separator. The anode chamber separated from the lower side is arranged with an anode; and a substrate holder is arranged above the anode chamber and holds a substrate serving as a cathode, wherein the anode has a cylindrical shape extending in an up-down direction, and the plating apparatus further includes : a gas storage part, which is provided with an anode chamber to have a space between the anode and the upper end, the outer circumference and the inner circumference of the anode to store the process gas generated from the anode; and a discharge mechanism to store the gas in the anode The process gas in the gas storage part is discharged to the outside of the plating tank, and the plating treatment method includes: when the substrate is subjected to a plating treatment, the process gas stored in the gas storage part is discharged to the above-mentioned by the discharge mechanism. The outside of the plating tank. The said board|substrate conveyance apparatus may comprise the position detection part which detects the height position of the said board|substrate. When the control unit lifts the end effector toward the substrate and the detection result of the position detection unit changes, it can be determined that the end effector starts to raise the height position of the substrate.

According to this aspect, the process gas generated from the cylindrical anode extending in the vertical direction can be stored in the gas storage portion, and the stored process gas can be discharged to the outside of the coating tank by the discharge mechanism. Thereby, the process gas remaining on the lower surface of the separator of the anode chamber can be suppressed. As a result, the deterioration of the plating quality of the substrate caused by the process gas can be suppressed.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. In addition, in the following embodiment or the modification of an embodiment, the same code|symbol is attached|subjected to the same or corresponding structure, and description may be abbreviate|omitted suitably. In addition, the drawings are schematic diagrams in order to facilitate understanding of the features of the embodiment and the modification, and the dimensional ratios and the like of the respective components are not limited to those of the actual ones. Also, in some drawings, the drawings have X-Y-Z rectangular coordinates for reference. In this rectangular coordinate, the Z direction corresponds to the upper direction, and the -Z direction corresponds to the downward direction (the direction of gravity).

FIG. 1 is a perspective view showing the overall configuration of a coating apparatus 1000 according to the present embodiment. FIG. 2 is a plan view showing the overall configuration of the coating apparatus 1000 according to the present embodiment. As shown in the first and second figures, the plating apparatus 1000 includes a loading port 100, a conveying motor 110, an aligner 120, a pre-wet module 200, a pre-preg module 300, a plating film group 400, a cleaning The module 500 , the spin dryer 600 , the conveying device 700 and the control module 800 .

The loading port 100 is a module for carrying in the substrates accommodated in a cassette such as a FOUP not shown in the plating apparatus 1000 , and carrying out the substrates from the plating apparatus 1000 to the cassette. In this embodiment, the four load ports 100 are arranged in parallel in the horizontal direction, but the number and arrangement of the load ports 100 are arbitrary. The transfer motor 110 is a motor for transferring the substrate, and is configured to transfer the substrate among the load port 100 , the aligner 120 , and the transfer device 700 . The transfer motor 110 and the transfer device 700 can transfer the substrate through a temporary stage (not shown) when transferring the substrate between the transfer motor 110 and the transfer device 700 .

The aligner 120 is a module used to match the orientation plane or notch of the substrate to a specific orientation. In the present embodiment, the two aligners 120 are arranged in parallel in the horizontal direction, but the number and arrangement of the aligners 120 are arbitrary. The pre-wetting module 200 replaces the air inside the pattern formed on the surface of the substrate with the processing liquid by wetting the plated surface of the substrate before the plating treatment with a processing liquid such as pure water or degassed water. The pre-moistening module 200 is configured to apply a pre-moisture treatment that facilitates supply of the plating liquid to the inside of the pattern by substituting the treatment liquid inside the pattern with a plating liquid during plating. In the present embodiment, although the two pre-wet modules 200 are arranged in parallel in the vertical direction, the number and arrangement of the pre-wet modules 200 are arbitrary.

The prepreg module 300 is configured to, for example, apply a treatment solution such as sulfuric acid or hydrochloric acid to etch away the large oxide film of resistance existing on the surface of the seed layer formed on the plated surface of the substrate before the plating treatment, and then wash or activate the plating process. Prepreg treatment of the substrate surface. In the present embodiment, although two prepreg modules 300 are arranged in parallel in the vertical direction, the number and arrangement of the prepreg modules 300 are arbitrary. The plating film group 400 applies a plating process to the substrate. In the present embodiment, there are two 12 plating film groups 400 in which three in the vertical direction and four in the horizontal direction are arranged side by side, and a total of 24 plating film groups 400 are provided. The number and configuration are arbitrary.

The cleaning module 500 is configured to perform cleaning treatment on the substrate in order to remove the plating solution and the like remaining on the substrate after the plating treatment. In the present embodiment, the two cleaning modules 500 are arranged side by side in the vertical direction, but the number and arrangement of the cleaning modules 500 are arbitrary. The spin dryer 600 is a module for rotating and drying the cleaned substrate at high speed. In this embodiment, although the two spin dryers 600 are arranged in parallel in the vertical direction, the number and arrangement of the spin dryers 600 are arbitrary. The conveyance apparatus 700 is an apparatus for conveying a board|substrate between the some modules in the plating apparatus 1000. The control module 800 is constituted as a plurality of modules for controlling the coating apparatus 1000 , and can be constituted by, for example, a general computer or a dedicated computer provided with an I/O interface between operators.

An example in which the plating apparatus 1000 performs a series of plating processes will be described. First, the substrate accommodated in the cassette is carried into the load port 100 . Then, the transfer motor 110 takes out the substrate from the cassette of the loading port 100 and transfers the substrate to the aligner 120 . The aligner 120 matches the position of the substrate's orientation flats or notches to a particular orientation. The transfer motor 110 transfers the substrate in the mating direction of the aligner 120 to the transfer device 700 .

The transfer device 700 transfers the substrate received from the transfer motor 110 to the pre-wetting module 200 . The pre-wetting module 200 applies a pre-wetting process to the substrate. The transport device 700 transports the pre-moistened substrate to the prepreg module 300 . The prepreg module 300 applies prepreg treatment to the substrate. The conveying device 700 conveys the prepreg-treated substrate to the plating film group 400 . The plating film group 400 applies plating to the substrate.

The conveying device 700 conveys the plated substrate to the cleaning module 500 . The cleaning module 500 applies a cleaning process to the substrate. The transfer device 700 transfers the cleaned substrate to the spin dryer 600 . The spin dryer 600 applies a drying process to the substrate. The transfer device 700 transfers the over-dried substrate to the transfer motor 110 . The conveyance motor 110 conveys the substrate received from the conveyance device 700 to the cassette of the loading port 100 . Finally, the cassette for accommodating the substrate from the load port 100 is carried out.

In addition, the structure of the plating apparatus 1000 described in the first or second figures is merely an example, and the structure of the plating apparatus 1000 is not limited to the structure of the first or second figures.

Next, the plating film group 400 will be described. In addition, since the plurality of plating film groups 400 included in the plating apparatus 1000 of the present embodiment have the same structure, the description will be made about one plating film group 400 .

FIG. 3 is a diagram for explaining the structure of the plating film group 400 of the plating apparatus 1000 according to the present embodiment. The plating apparatus 1000 concerning this embodiment is a cup type plating apparatus. The coating film group 400 of the coating apparatus 1000 of the present embodiment mainly includes a coating tank 10 , an overflow tank 20 , a substrate holder 30 , a rotation mechanism 40 , a lifting mechanism 45 , a gas storage unit 60 , a discharge mechanism 70 , a Position sensor 75 and anode moving mechanism 80 . In addition, in the third figure, the plating tank 10 , the overflow tank 20 , and the substrate holder 30 are schematically shown in cross-section.

The plating tank 10 of the present embodiment is constituted by a bottomed container having an upper opening. Specifically, the plating tank 10 has a bottom wall portion 10a and an outer peripheral wall portion 10b extending upward from the outer peripheral edge of the bottom wall portion 10a. The shape of the peripheral wall portion 10b is not particularly limited. The outer peripheral wall portion 10b has a cylindrical shape as an example.

Inside the plating tank 10, the plating solution Ps is stored. The plating solution Ps may be a solution containing metal element ions constituting the plating film, and its specific example is not particularly limited. In this embodiment, a copper plating process is used as an example of the plating process, and a copper sulfate solution is used as an example of the plating solution Ps. In addition, in the present embodiment, the plating solution Ps contains a specific additive. However, it is not limited to this structure, and the plating solution Ps may have a structure that does not contain additives.

An anode 11 is arranged inside the coating tank 10 . FIG. 4 is a schematic perspective view of the anode 11 . Referring to FIGS. 3 and 4, the anode 11 of the present embodiment has a cylindrical shape extending in the vertical direction. As shown in FIG. 3 , a bus bar 50 as a conductive member is connected to the lower end of the anode 11 . The bus bar 50 is electrically connected to an energizing device (not shown) via the wiring 55 . In addition, the substrate Wf serving as the cathode is also electrically connected to this energizing device through wiring (not shown).

A specific example of the anode 11 may be one that generates a process gas Ga, which will be described later, and is not particularly limited, but in this embodiment, an insoluble anode is used as a specific example of the anode 11 . The specific type of this insoluble anode is not particularly limited, and platinum, iridium oxide, or the like can be used.

According to the present embodiment, since the anode 11 has a cylindrical shape extending in the vertical direction, the process gas Ga generated from the anode 11 can be easily recovered by the gas storage unit 60 described later.

As shown in FIG. 3 , in the coating tank 10 , a separator 12 is arranged above the anode 11 . Specifically, the separator 12 is arranged at a position between the anode 11 and the substrate Wf (cathode). The outer peripheral part of the diaphragm 12 of this embodiment is connected to the side wall part 60b of the gas storage part 60 mentioned later. Moreover, regarding the diaphragm 12 of this embodiment, the surface direction of the diaphragm 12 is arrange|positioned so that it may become a horizontal direction.

The inside of the coating tank 10 is divided into two parts in the vertical direction by the diaphragm 12 . The area divided below the diaphragm 12 is called the anode chamber 13 . The area divided above the diaphragm 12 is called the cathode chamber 14 . The aforementioned anode 11 is arranged in the anode chamber 13 .

The separator 12 allows the passage of metal ions, and is composed of a film that suppresses the passage of additives contained in the plating solution Ps. That is, in this embodiment, although the plating liquid Ps of the cathode chamber 14 contains an additive, the plating liquid Ps of the anode chamber 13 does not contain an additive. However, not limited to this structure, for example, the plating solution Ps of the anode chamber 13 may also contain additives. However, even in this case, the additive concentration of the anode chamber 13 will be lower than that of the cathode chamber 14 . The specific type of the separator 12 is not particularly limited, and a known separator can be used. As a specific example of this separator 12, for example, an electrolytic separator can be used, for example, an electrolytic separator for plating manufactured by GS YUASA INTERNATIONAL LTD., an ion exchange membrane, or the like can be used.

Since the coating apparatus 1000 is provided with the separator 12 as in the present embodiment, the decomposition or reaction of the components of the additives contained in the plating solution Ps can be suppressed by the reaction on the anode side, whereby the components of the additives can be decomposed or reacted. Lead to the generation of components that adversely affect plating.

The plating tank 10 is provided with an anode supply port 15 for supplying the plating solution Ps to the anode chamber 13 . In addition, the plating tank 10 is provided with an anode discharge port 16 for discharging the plating solution Ps of the anode chamber 13 from the anode chamber 13 . The plating solution Ps discharged from the discharge port 16 for anodes is then stored in a storage tank for anodes (not shown), and then supplied to the anode chamber 13 from the supply port 15 for anodes.

The plating tank 10 is provided with a cathode supply port 17 for supplying the plating solution Ps to the cathode chamber 14 . Specifically, in a part of the portion corresponding to the cathode chamber 14 of the outer peripheral wall portion 10b of the coating tank 10 of the present embodiment, a protrusion 10c protruding on the center side of the coating tank 10 is provided, and the protrusion 10c is provided There is a cathode supply port 17 .

The overflow tank 20 is constituted by a bottomed container arranged outside the coating tank 10 . The overflow tank 20 is a tank provided to store the plating solution Ps that exceeds the upper end of the outer peripheral wall portion 10 b of the coating tank 10 (ie, the plating solution Ps overflowing from the coating tank 10 ). The plating solution Ps supplied from the cathode supply port 17 to the cathode chamber 14 flows into the overflow tank 20, is discharged from the overflow tank 20 discharge port (not shown), and is stored in a cathode storage tank (not shown in the figure). Show). After that, the plating solution Ps is resupplied to the cathode chamber 14 from the cathode supply port 17 .

In the cathode chamber 14 of the present embodiment, a porous resist 18 is arranged. Specifically, the resisting body 18 of the present embodiment is provided in the vicinity of the upper end portion of the protruding portion 10c. The resisting body 18 is constituted by a porous plate member having a plurality of holes (fine holes). However, the resister 18 is not an essential structure of the present embodiment, and the coating apparatus 1000 may have a structure without the resister 18 .

In addition, in this embodiment, the anode cover 19 is arranged in the anode chamber 13 . Details of this anode cover 19 will be described later.

The substrate holder 30 is a member for holding the substrate Wf serving as the cathode. The substrate holder 30 of the present embodiment holds the substrate Wf with the plated surface of the substrate Wf facing downward. The substrate holder 30 is connected to the rotation mechanism 40 . The rotation mechanism 40 is a mechanism for rotating the substrate holder 30 . A known mechanism such as a rotary motor can be used as the rotation mechanism 40 . The rotation mechanism 40 is connected to the lift mechanism 45 . The elevating mechanism 45 is supported by a support shaft 46 extending in the vertical direction. The elevating mechanism 45 is a mechanism for elevating the substrate holder 30 and the rotation mechanism 40 in the vertical direction. As the elevating mechanism 45, a known elevating mechanism such as a linear actuator can be used.

When the plating process is performed, the rotation mechanism 40 rotates the substrate holder 30 , and the elevating mechanism 45 moves the substrate holder 30 downward to immerse the substrate Wf in the plating solution Ps of the plating tank 10 . Next, electricity flows between the anode 11 and the substrate Wf by the energizing means. Thereby, a plated film is formed on the plated surface Wfa of the substrate Wf.

The action of the coating film group 400 is controlled by the control module 800 . The control module 800 includes a microcomputer including a CPU (Central Processing Unit) 801 as a processor, a storage unit 802 as a non-transitory storage medium, and the like. In the control module 800 , the CPU 801 controls the operation of the controlled part of the coating film group 400 according to the program command stored in the memory part 802 .

In addition, in this embodiment, although one control module 800 operates as a control device that controls the controlled parts of the coating film group 400 in an integrated manner, it is not limited to this structure. For example, the control module 800 includes a plurality of control devices, and the plurality of control devices may individually control the controlled parts of each plating film group 400 .

Next, the gas storage unit 60 and the discharge mechanism 70 will be described. 5th (A) figure and 5th (B) figure are schematic cross-sectional views for demonstrating the gas storage part 60 and the discharge mechanism 70 . Fig. 5(A) is a schematic cross-sectional view showing the peripheral structure of the discharge mechanism 70 of the coating tank 10 of the third Fig. Peripheral structure of the bit sensor 75 .

Here, in the plating process of the substrate Wf by the plating apparatus 1000 , oxygen gas (O ₂ ) as the process gas Ga is generated in the anode chamber 13 according to the following reaction formula. 2H ₂ O→O ₂ +4H ⁺ +4e ^-

When such a process gas Ga remains on the lower surface 12a of the diaphragm 12, the process gas Ga may block the electric field. In this case, the plating quality of the substrate Wf may deteriorate. Therefore, the coating film group 400 of the present embodiment is provided with a gas storage portion 60 described below in order to prevent the process gas Ga from remaining on the lower surface 12 a of the diaphragm 12 and to prevent the process gas Ga from deteriorating the coating quality of the substrate Wf due to the process gas Ga. and discharge mechanism 70 .

The gas storage unit 60 is provided in the anode chamber 13 . The gas storage unit 60 is configured to store the process gas Ga generated from the anode 11 . Specifically, the gas storage part 60 of the present embodiment is provided in the anode chamber 13 with a space between it and the cylindrical anode 11 , and covers the upper end 11 c , the outer peripheral surface 11 a , and the inner peripheral surface 11 b of the anode 11 (see reference numerals). Fourth picture).

More specifically, the gas storage part 60 of this embodiment has the upper wall part 60a and the side wall part 60b. The upper wall portion 60 a is connected to the outer peripheral wall portion 10 b of the coating tank 10 , and is arranged above the upper end 11 c of the anode 11 . The side wall part 60b is comprised so that the upper end part is connected to the upper wall part 60a, and is comprised so that it may extend up and down from the upper wall part 60a. In addition, the upper wall part 60a of this embodiment has a ring shape (or a flange shape), and the side wall part 60b has a cylindrical shape. The process gas Ga generated from the anode 11 is stored in a region separated from the outer peripheral wall portion 10b of the plating tank 10 and the upper wall portion 60a and the side wall portion 60b of the gas storage portion 60 .

Referring to FIG. 5(A), the discharge mechanism 70 is configured as a mechanism for discharging the process gas Ga stored in the gas storage unit 60 to the outside of the coating tank 10 . Specifically, the discharge mechanism 70 of the present embodiment includes a discharge pipe 71 and an on-off valve 72 arranged in the discharge pipe 71 . The discharge pipe 71 communicates with the outside of the gas storage unit 60 and the coating tank 10 . The switching action of the on-off valve 72 is controlled by the control module 800 . The on-off valve 72 is normally closed. When the on-off valve 72 is in an open state, the process gas Ga in the gas storage unit 60 is discharged to the outside of the coating tank 10 (specifically, the atmosphere) through the discharge pipe 71 .

Referring to FIG. 5(B), the level sensor 75 is a sensor for detecting the liquid level position (height) of the plating solution Ps in the gas storage portion 60 . The level sensor 75 transmits its detection result to the control module 800 . When the process gas Ga is not present in the gas storage portion 60, the gas storage portion 60 is filled with the plating solution Ps. When the gas storage part 60 stores the process gas Ga, the liquid level of the plating solution Ps in the gas storage part 60 decreases. In this way, the liquid level of the plating solution Ps in the gas storage unit 60 has a correlation with the amount of the process gas Ga stored in the gas storage unit 60 . Therefore, in the control module 800 of the present embodiment, the discharge mechanism 70 is controlled based on the detection result of the level sensor 75 . The control of the discharge mechanism 70 of the control module 800 will be described below using a flowchart.

FIG. 6 is an example of a control flowchart of the discharge mechanism performed by the control module 800 according to the present embodiment. In step S10 , the control module 800 determines whether or not a condition for starting the discharge of the process gas Ga from the gas storage unit 60 (“discharge start condition”) is satisfied.

Specifically, in this step S10 , the control module 800 determines whether the liquid level of the plating solution Ps in the gas storage part 60 is lower than the specific reference position according to the detection result of the level sensor 75 . When the control module 800 determines that the liquid level of the plating solution Ps is at a position further below the reference position, it determines that the discharge start condition (YES) is satisfied.

When the determination in step S10 is YES, the control module 800 opens the on-off valve 72 (step S11 ). Thereby, the process gas Ga in the gas storage part 60 is discharged to the outside of the coating tank 10 .

In addition, once the control module 800 opens the on-off valve 72, according to the detection result of the level sensor 75, it is determined that the liquid level of the plating solution Ps in the gas storage part 60 is at the reference position or above the reference position In the position, the on-off valve 72 can also be returned to the closed state. Alternatively, the control module 800 can also make the on-off valve 72 return to the closed state after a preset specific time has elapsed after the on-off valve 72 is opened (that is, in this case, the on-off valve 72 is closed within a specific time period). the valve is open during the period).

According to the present embodiment as described above, the process gas Ga generated from the cylindrical anode 11 extending in the vertical direction can be stored in the gas storage part 60 , and the gas stored in the gas storage part 60 can be stored in the gas storage part 60 by the discharge mechanism 70 . The process gas Ga is discharged to the outside of the coating tank 10 . As a result, the process gas Ga can be suppressed from remaining on the lower surface 12 a of the separator 12 of the anode chamber 13 . As a result, deterioration of the plating quality of the substrate Wf due to the process gas Ga can be suppressed.

Next, the anode cover 19 will be described. FIG. 7(A) is a schematic cross-sectional view of the separator 12 and the anode cover 19 . FIG. 7(B) is a schematic perspective view of the anode cover 19 . Referring to the third, seventh (A), and seventh (B) drawings, the anode cover 19 is arranged in the anode chamber 13 . The anode cover 19 of the present embodiment has a ring shape. The anode cover 19 has an opening 19b through which electricity flowing between the anode 11 and the substrate Wf passes. In the present embodiment, the diameter (diameter) of the opening 19 b is smaller than the inner diameter of the anode 11 . Moreover, regarding the anode cover 19 of this embodiment, as shown in FIG. 7(A), the upper surface 19a of the anode cover 19 is arrange|positioned so that the lower surface 12a of the separator 12 may be contacted.

Next, the anode moving mechanism 80 will be described. FIG. 8 is a cross-sectional view schematically showing the peripheral structure of the anode moving mechanism of the plating film group according to the embodiment. The anode moving mechanism 80 is a mechanism for moving the anode 11 in the vertical direction. Specifically, the anode moving mechanism 80 according to the present invention is connected to the anode 11 via the bus bar 50 .

That is, the bus bar 50 of the present embodiment is an example of the “first connection member 90 ” that connects the anode moving mechanism 80 and the anode 11 . The anode moving mechanism 80 of the present embodiment moves the anode 11 in the up-down direction by moving the bus bar 50 serving as the first connection member 90 in the up-down direction.

Further, the bus bar 50 according to the present embodiment includes a rod-shaped portion 50b extending in the vertical direction, and a flat plate portion 50a connected to the upper end of the rod-shaped portion 50b and extending in the horizontal direction. The outer peripheral edge of the flat plate portion 50 a is connected to the lower end of the anode 11 . The flat plate portion 50a and the rod-shaped portion 50b are made of a conductive material. In addition, the bus bar 50 of the present embodiment also includes the covering material 50c covering the flat plate portion 50a and the rod-shaped portion 50b. The specific material of the covering material 50c is not particularly limited, but in the present embodiment, a resin such as polytetrafluoroethylene or polyether ether ketone is used as an example.

The anode moving mechanism 80 may be any one that can move the anode 11 in the vertical direction, and its specific structure is not particularly limited, but the anode moving mechanism 80 of the present embodiment is constituted by a piston/cylinder mechanism. as an example. Specifically, the anode moving mechanism 80 of the present embodiment includes a cylinder 81 ; a piston 82 that slides relative to the cylinder 81 to move in and out of the cylinder 81 ; and an actuator 83 that drives the piston 82 . The action of the actuator 83 is controlled by the control module 800 . Moreover, the anode moving mechanism 80 is arrange|positioned so that the piston 82 may be displaced in an up-down direction.

The rod-shaped part 50b of the bus bar 50 (specifically, the covering material 50c covering the circumference of the rod-shaped part 50b) is connected to the upper end of the piston 82 . By receiving the instruction of the control module 800, the actuator 83 displaces the piston 82 upward, and the bus bar 50 moves upward, whereby the anode 11 also moves upward. On the other hand, by receiving an instruction from the control module 800, the actuator 83 displaces the piston 82 downward, and the bus bar 50 moves downward, whereby the anode 11 also moves downward.

In addition, the bottom wall portion 10a of the plating tank 10 is provided with a through hole through which the rod-shaped portion 50b of the bus bar 50 passes, and a sealing member 57 is provided on the inner peripheral surface of the through hole. The sealing member 57 effectively suppresses leakage of the plating solution Ps in the anode chamber 13 from the through hole to the outside.

The ninth (A) and ninth (B) diagrams are schematic cross-sectional views showing changes in the state of electric field formation when the position of the anode 11 in the vertical direction changes. Specifically, Fig. 9(A) is a schematic cross-sectional view showing a state in which the anode 11 is positioned higher than that in Fig. 9(B) during the plating process, and Fig. 9(B) is a schematic cross-sectional view showing the plating process At this time, the anode 11 is located in a lower state than in the ninth (A) figure. "Ef" shown in the ninth (A) and ninth (B) diagrams represents power lines.

As shown in FIGS. 9(A) and 9(B) , the distance between the substrate Wf and the anode 11 can be changed by moving the anode 11 upward and downward by the anode moving mechanism 80 . Thereby, the formation state of the electric field formed between the substrate Wf and the anode 11 can be changed during the plating process.

In addition, according to the present embodiment, the formation of the electric field can be changed by the simple mechanism of moving the anode 11 in the vertical direction by the anode moving mechanism 80. Therefore, the size of the opening 19b can be changed compared to, for example, the plating apparatus 1000. In the case of a variable mechanism of the opening portion, the structure of the coating apparatus 1000 can be prevented from being complicated. Thereby, an attempt can be made to reduce the cost of the plating apparatus 1000 .

In addition, in the present embodiment, the more the anode 11 moves downward, the higher the density of the lines of electric force Ef passing through the opening 19b of the anode cover 19 is. Therefore, when it is desired to increase the density of the lines of electric force Ef passing through the opening 19b of the anode cover 19, the anode 11 may be moved downward. Conversely, when it is desired to decrease the density of the lines of electric force Ef passing through the opening 19b of the anode cover 19 In this case, the anode 11 may be moved upward.

In addition, the plating treatment method of the present embodiment is realized by the above-described plating apparatus 1000 . Therefore, the detailed description of this plating treatment method is omitted because repeated description is omitted.

(Variation 1) In the above-described embodiment, the anode cover 19 is arranged so that the upper surface 19a of the anode cover 19 is in contact with the lower surface 12a of the separator 12 (Fig. 7(A)), but it is not limited to this configuration. For example, the anode cover 19 may be arranged in the following positions.

FIG. 10(A) is a schematic cross-sectional view showing the peripheral structure of the anode cover 19 in the plating module 400A of the plating apparatus 1000A according to the modification 1 of the embodiment. The anode cover 19 of this modification is arranged so that the upper surface 19a of the anode cover 19 is not in contact with the lower surface 12a of the separator 12, and a space is formed between the upper surface 19a of the anode cover 19 and the lower surface 12a of the separator 12. Also in this modification, the same functions and effects as those of the aforementioned embodiment can be achieved.

(Variation 2) The tenth (B) figure shows the schematic cross-sectional view of the surrounding structure of the anode cover in the plating module 400B of the plating apparatus 1000B concerning the modification 2 of embodiment. The plating module 400B of this modification is different from the plating module 400 and the plating module 400A described above in that the second connection member 91 is further provided.

The second connecting member 91 is a member for connecting the anode cover 19 and the first connecting member 90 (the bus bar 50 in this modification). Accordingly, in order to move the anode 11 in the vertical direction, the anode cover 19 of the present modification can move in the vertical direction together with the anode 11 when the anode moving mechanism 80 moves the first connecting member 90 in the vertical direction.

The specific example of the second connection member 91 is not particularly limited, but in this modification, the second antibody 18B is used as an example of the second connection member 91 . Specifically, the second antibody 18B is formed of a porous member like the resist 18 . In addition, the second antibody 18B is arranged in a region inside the anode chamber 13 in the radial direction of the anode 11 (the radial direction of the anode 11 ). In addition, the second antibody 18B has a cylindrical shape. Then, the upper end of the secondary antibody 18B is connected to the anode cover 19 , and the lower end of the secondary antibody 18B is connected to the covering material 50 c covering the surface of the flat plate portion 50 a of the bus bar 50 .

In this modification, the same effect as that of the aforementioned embodiment can be achieved. Moreover, according to this modification, the anode cover 19 and the anode 11 can be moved up and down.

As described above, the embodiments and modifications of the present invention have been described in detail, but the present invention is not limited to such specific embodiments or modifications, and various modifications can be made within the gist of the present invention described in the scope of claims. or change.

10: Plating tank 10a: Bottom wall 10b: Peripheral wall portion 10c: Protrusion 11: Anode 11a: Outer peripheral surface 11b: Inner peripheral surface 11c: upper end 12: Diaphragm 12a: lower surface 13: Anode chamber 14: Cathode Chamber 15: Supply port for anode 16: Discharge port for anode 17: Supply port for cathode 18: Resistors 18B: secondary antibody 19: Anode cover 19a: Upper surface 19b: Opening 20: Overflow tank 30: Substrate fixture 40: Rotary Mechanism 45: Lifting mechanism 46: Pivot 50: Busbar 50a: Flat plate 50b: Rod 50c: Coating material 55: Wiring 57: Sealing parts 60: Gas Storage Department 60a: upper wall 60b: side wall 70: Discharge mechanism 71: Discharge pipe 72: On-off valve 75: Level sensor 80: Anode moving mechanism 81: Cylinder 82: Piston 83: Actuator 90: The first connecting part 91: Second connecting part 100: Load port 110: Conveying motor 120: Aligner 200: Pre-wet module 300: Prepreg module 400, 400A, 400B: Coating group 500: Cleaning Module 600: Spin dryer 700: Conveyor 800: Control Module 801:CPU 802: Memory Department 1000, 1000A, 1000B: Coating device Ef: Powerline Ga: Process gas Ps: plating solution S10, S11: Steps Wf: substrate Wfa: plated surface

[FIGURE 1] A perspective view showing the overall configuration of the coating apparatus according to the embodiment. [Fig. 2] A plan view showing the overall configuration of the coating apparatus according to the embodiment. [Fig. 3] A diagram for explaining the structure of the module according to the embodiment. [FIG. 4] A schematic perspective view of the anode of the embodiment. [FIG. 5] FIGS. 5(A) and 5(B) are schematic cross-sectional views for explaining the gas storage unit and the discharge mechanism according to the embodiment. [Fig. 6] An example of a control flowchart of the discharge mechanism according to the embodiment. [Fig. 7] Fig. 7(A) is a schematic cross-sectional view of the separator and the anode cover according to the embodiment. Fig. 7(B) is a schematic perspective view of the anode cover of the embodiment. [Fig. 8] A cross-sectional view schematically showing the peripheral structure of the anode moving mechanism of the plating film group according to the embodiment. [Fig. 9] Figs. 9(A) and 9(B) are schematic cross-sectional views showing changes in the state of electric field formation when the position of the anode in the vertical direction of the embodiment changes. [Fig. 10] Fig. 10(A) is a schematic cross-sectional view showing the peripheral structure of the anode cover of the coating apparatus according to Modification 1 of the embodiment. The tenth (B) figure shows the schematic cross-sectional view of the surrounding structure of the anode cover of the coating apparatus concerning the modification 2 of embodiment.

10: Plating tank

10a: Bottom wall

10b: Peripheral wall portion

10c: Protrusion

11: Anode

12: Diaphragm

13: Anode chamber

14: Cathode Chamber

15: Supply port for anode

16: Discharge port for anode

17: Supply port for cathode

18: Resistors

19: Anode cover

19b: Opening

20: Overflow tank

30: Substrate fixture

40: Rotary Mechanism

45: Lifting mechanism

46: Pivot

50: Busbar

50a: Flat plate

50c: Coating material

55: Wiring

60: Gas Storage Department

70: Discharge mechanism

71: Discharge pipe

72: On-off valve

75: Level sensor

80: Anode moving mechanism

400: Coating group

800: Control Module

801:CPU

802: Memory Department

1000: Coating device

Ps: plating solution

Wf: substrate

Wfa: plated surface

Claims (6)

A coating device, comprising: a plating tank equipped with a diaphragm, and an anode is disposed in an anode chamber separated from the lower side of the diaphragm; and A substrate holder is disposed above the anode chamber and holds a substrate serving as a cathode, wherein the anode has a cylindrical shape extending in an up-down direction, and the coating device further includes: a gas storage part provided with the anode chamber so as to have a space between the anode and the anode and cover an upper end, an outer circumference and an inner circumference of the anode for storing a process gas generated from the anode; and a discharge mechanism for discharging the process gas stored in the gas storage part to the outside of the coating tank. The coating device according to claim 1, further comprising: an anode cover disposed in the anode chamber and having an opening through which electricity flows between the anode and the substrate; and An anode moving mechanism makes the anode move up and down. The coating apparatus according to claim 2, wherein the anode cover is configured such that an upper surface of the anode cover is connected to a lower surface of the diaphragm. The plating apparatus according to claim 2, wherein the anode cover is configured to form a space between the upper surface of the anode cover and the lower surface of the separator. The coating apparatus according to claim 2, wherein the anode moving mechanism is connected to the anode via a first connecting member, and moves the anode in the vertical direction by moving the first connecting member in the vertical direction; The anode cover is connected to the first connecting member via a second connecting member, and the anode moving mechanism is configured to move together with the anode after moving the first connecting member. A plating treatment method using a plating apparatus, the plating apparatus comprising: a plating tank provided with a diaphragm, an anode is disposed in an anode chamber separated from the lower side of the diaphragm; The anode chamber is further above and holds a substrate as a cathode, wherein the anode has a cylindrical shape extending in the up-down direction, and the plating device further includes: a gas storage part provided with the anode chamber so as to have a space between the anode and the anode and cover an upper end, an outer circumference and an inner circumference of the anode for storing a process gas generated from the anode; and a discharge mechanism for discharging the process gas stored in the gas storage part to the outside of the plating tank, and the plating treatment method includes: when the substrate is subjected to a plating treatment, using the discharge mechanism to store the gas The process gas stored in the part is discharged to the outside of the coating tank.

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