TW202223039A - Liquid adhesive, laminate, and method of producing semiconductor chip - Google Patents

Liquid adhesive, laminate, and method of producing semiconductor chip Download PDF

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TW202223039A
TW202223039A TW110134881A TW110134881A TW202223039A TW 202223039 A TW202223039 A TW 202223039A TW 110134881 A TW110134881 A TW 110134881A TW 110134881 A TW110134881 A TW 110134881A TW 202223039 A TW202223039 A TW 202223039A
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Taiwan
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liquid adhesive
group
light
optically transparent
semiconductor wafer
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TW110134881A
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西岡浩史
野田一樹
高森克也
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美商3M新設資產公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00Layered products essentially comprising sheet glass, or glass, slag, or like fibres
    • B32B17/06Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/16Layered products comprising a layer of synthetic resin specially treated, e.g. irradiated
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/30Layered products comprising a layer of synthetic resin comprising vinyl (co)polymers; comprising acrylic (co)polymers
    • B32B27/308Layered products comprising a layer of synthetic resin comprising vinyl (co)polymers; comprising acrylic (co)polymers comprising acrylic (co)polymers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
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    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/36Layered products comprising a layer of synthetic resin comprising polyesters
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/04Interconnection of layers
    • B32B7/12Interconnection of layers using interposed adhesives or interposed materials with bonding properties
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B9/00Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
    • B32B9/04Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B9/00Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
    • B32B9/04Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B9/045Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
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    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J135/00Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical, and containing at least another carboxyl radical in the molecule, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Adhesives based on derivatives of such polymers
    • C09J135/02Homopolymers or copolymers of esters
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    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J4/00Adhesives based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; adhesives, based on monomers of macromolecular compounds of groups C09J183/00 - C09J183/16
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    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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    • C09J5/00Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2255/00Coating on the layer surface
    • B32B2255/10Coating on the layer surface on synthetic resin layer or on natural or synthetic rubber layer
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2255/00Coating on the layer surface
    • B32B2255/26Polymeric coating
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00Properties of the layers or laminate
    • B32B2307/20Properties of the layers or laminate having particular electrical or magnetic properties, e.g. piezoelectric
    • B32B2307/202Conductive
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00Properties of the layers or laminate
    • B32B2307/40Properties of the layers or laminate having particular optical properties
    • B32B2307/412Transparent
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00Properties of the layers or laminate
    • B32B2307/50Properties of the layers or laminate having particular mechanical properties
    • B32B2307/54Yield strength; Tensile strength
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00Electrical equipment
    • B32B2457/14Semiconductor wafers
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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    • C09J2203/00Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00Additional features of adhesives in the form of films or foils
    • C09J2301/40Additional features of adhesives in the form of films or foils characterized by the presence of essential components
    • C09J2301/416Additional features of adhesives in the form of films or foils characterized by the presence of essential components use of irradiation
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00Additional features of adhesives in the form of films or foils
    • C09J2301/50Additional features of adhesives in the form of films or foils characterized by process specific features
    • C09J2301/502Additional features of adhesives in the form of films or foils characterized by process specific features process for debonding adherents
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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    • C09J2467/00Presence of polyester
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
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    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68318Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381Details of chemical or physical process used for separating the auxiliary support from a device or wafer

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Laminated Bodies (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Dicing (AREA)

Abstract

A liquid adhesive of an embodiment includes 60 mass% or greater of at least one ester compound represented by Formula (1) is described:
wherein total molar concentration of a polar functional group in the liquid adhesive is from 1 × 10-6 to 1.5 × 10-5 mol/g, and a storage modulus at 150℃ to 220℃ of a cured product of the liquid adhesive is from 15 to 35 MPa. Such a liquid adhesive may have sufficient adhesive force (holding force) even in a high temperature environment, low outgas properties in a high temperature environment, and can form a cured product that can be peeled easily after heat treatment.

Description

液體黏著劑、層壓體、及生產半導體晶片之方法 Liquid adhesive, laminate, and method of producing semiconductor wafers

本揭露係關於一種液體黏著劑、一種層壓體、及一種生產半導體晶片之方法。 The present disclosure relates to a liquid adhesive, a laminate, and a method of producing a semiconductor wafer.

在半導體工業中,為了滿足晶粒層壓技術對較薄封裝及較高密度之需求,半導體晶圓的厚度已藉由所謂的背側研磨而減少,在所述背側研磨中研磨與圖案化的表面相對的表面。在背側研磨期間由單獨的保護膠帶支撐晶圓的相關技術不足以滿足新提出的各種製造步驟的需求。因此,所提出的是一種技術,在該技術中在背側研磨及必要時後續步驟期間將半導體晶圓經由黏著劑支撐在剛性透明支撐件(諸如包括光熱轉換(light-to-heat-conversion,LTHC)層的玻璃基材)上,且最終藉由雷射掃描破壞該光熱轉換層以分離出半導體晶圓或藉由無應力地從支撐件將半導體晶圓切單而獲得的半導體晶片。 In the semiconductor industry, in order to meet the demand for thinner packages and higher densities in die lamination technology, the thickness of semiconductor wafers has been reduced by so-called backside grinding, in which grinding and patterning surface opposite to the surface. The related art of supporting the wafer by a separate protective tape during backside grinding is not sufficient for the newly proposed various manufacturing steps. Therefore, what is proposed is a technique in which a semiconductor wafer is supported via an adhesive on a rigid transparent support (such as including light-to-heat-conversion, during backside grinding and, if necessary, subsequent steps) LTHC) layer on the glass substrate), and finally destroy the light-to-heat conversion layer by laser scanning to separate the semiconductor wafer or the semiconductor wafer obtained by stress-free singulation of the semiconductor wafer from the support.

專利文件1(JP 2004-064040 A)描述了一種「層壓體,該層壓體包括待研磨的基材;接合層,該接合層與該待研磨的基材接觸;光熱轉換層,該光熱轉換層包含光吸收劑及熱可分解樹脂;及光學透明支撐件,其中該光熱轉換層係藉由研磨該待研磨基材之 與接合層對置的表面而形成,且隨後藉由用輻射能輻照分解該光熱轉換層,且使經研磨的基板與該光學透明支撐件分開」。 Patent Document 1 (JP 2004-064040 A) describes a "laminate comprising a substrate to be ground; a bonding layer that is in contact with the substrate to be ground; a light-to-heat conversion layer that is The conversion layer includes a light absorber and a thermally decomposable resin; and an optically transparent support, wherein the light-to-heat conversion layer is formed by grinding the substrate to be ground. The surface opposite the bonding layer is formed, and then the light-to-heat conversion layer is decomposed by irradiation with radiant energy, and the ground substrate is separated from the optically transparent support".

專利文件2(JP 2005-159155 A)描述了一種「生產半導體晶片之方法,該方法包括以下步驟:將包含光吸收劑及熱可分解樹脂的光熱轉換層施加到光學透明支撐件上,當用輻射能輻照該光熱轉換層時,該光熱轉換層將輻射量能轉換成熱量,然後由該熱量分解;藉由製備包括具有電路圖案之電路表面及與該電路表面相對之非電路表面的半導體晶圓形成在外側中包括非電路表面之層壓體,經由光可固化黏著劑接合半導體晶圓及光學透明支撐件,使得電路表面及光熱轉換層彼此面對,且用光從該光學透明支撐件側輻照以固化光可固化黏著劑層;研磨該半導體晶圓之該非電路表面,直到該半導體晶圓具有所需厚度為止;從該非電路表面側將該經研磨的半導體晶圓切單以切割成複數個半導體晶片;用輻射能從該光學透明支撐件側輻照並將該光熱轉換層分解及分開成具有黏著劑層之半導體晶片及該光學透明支撐件」。 Patent Document 2 (JP 2005-159155 A) describes a "method of producing a semiconductor wafer, the method comprising the steps of: applying a light-to-heat conversion layer containing a light absorbing agent and a thermally decomposable resin on an optically transparent support, and using When radiant energy irradiates the light-to-heat conversion layer, the light-to-heat conversion layer converts the radiant energy into heat, which is then decomposed by the heat; by preparing a semiconductor including a circuit surface with a circuit pattern and a non-circuit surface opposite to the circuit surface The wafer forms a laminate including a non-circuit surface in the outer side, the semiconductor wafer and the optically transparent support are bonded via a photocurable adhesive so that the circuit surface and the light-to-heat conversion layer face each other, and light is passed from the optically transparent support component side irradiation to cure the photocurable adhesive layer; grinding the non-circuit surface of the semiconductor wafer until the semiconductor wafer has the desired thickness; singulating the ground semiconductor wafer from the non-circuit surface side to Cut into a plurality of semiconductor wafers; irradiate with radiant energy from the optically transparent support side and decompose and separate the light-to-heat conversion layer into semiconductor wafers with an adhesive layer and the optically transparent support".

作為可在專利文件1及2中所描述之技術中使用的黏著劑,例如專利文件3(JP 2015-224316 A)描述了一種「暫時緊固黏著劑組成物,該暫時固定黏著劑組成物含有關於(A)總計100質量份的之(甲基)丙烯酸酯,該(甲基)丙烯酸酯含有單官能(甲基)丙烯酸酯及多官能(甲基)丙烯酸酯;(B)0.01質量份至5質量份的光聚合起始劑,其中當溫度以10℃/min之速率在氮氣流下升高時質量 減少率係10質量%的溫度大於或等於250℃;以及(C)0.01質量份至1質量份的具有30m2/g至100m2/g的比表面積的碳黑」。 As an adhesive that can be used in the techniques described in Patent Documents 1 and 2, for example, Patent Document 3 (JP 2015-224316 A) describes a "temporary fastening adhesive composition containing Regarding (A) 100 parts by mass of (meth)acrylates in total, the (meth)acrylates contain monofunctional (meth)acrylates and polyfunctional (meth)acrylates; (B) 0.01 parts by mass to 5 parts by mass of a photopolymerization initiator, wherein the mass reduction rate is 10% by mass when the temperature is raised at a rate of 10°C/min under a nitrogen stream at a temperature greater than or equal to 250°C; and (C) 0.01 parts by mass to 1 Parts by mass of carbon black having a specific surface area of 30 m 2 /g to 100 m 2 /g".

描述於專利文件1及2中的技術可解決諸如在背側研磨期間的基材厚度不均勻性、在背側研磨後薄化的晶圓的翹曲、及由於背側研磨期間施加的應力所造成的晶圓損傷的問題。 The techniques described in Patent Documents 1 and 2 can address issues such as substrate thickness non-uniformity during backside grinding, warpage of thinned wafers after backside grinding, and problems caused by stress applied during backside grinding. caused by wafer damage.

由於功率半導體及先進封裝技術領域中的快速發展,用於暫時接合晶圓與支撐件的黏著劑意欲繼續用於背側研磨之後的步驟中,且因此被希望具有與彼等步驟的相容性,例如熱穩定性。背側研磨之後的步驟之實例包括化學機械研磨(chemical mechanical polishing,CMP)、物理氣相沉積(physical vapor deposition,PVD)(諸如樹脂模製、濕式蝕刻、乾式蝕刻、氣相沉積、及濺鍍)、化學氣相沉積(chemical vapor deposition,CVD)、電鍍、無電鍍、及藉由光微影術進行圖案形成、及在矽晶圓之表面中進行氧化物膜形成。 Due to the rapid development in the field of power semiconductor and advanced packaging technology, the adhesive used to temporarily bond the wafer to the support is intended to continue to be used in the steps after the backside grinding and is therefore expected to have compatibility with those steps , such as thermal stability. Examples of steps following backside polishing include chemical mechanical polishing (CMP), physical vapor deposition (PVD) such as resin molding, wet etching, dry etching, vapor deposition, and sputtering electroplating), chemical vapor deposition (CVD), electroplating, electroless plating, and patterning by photolithography, and oxide film formation in the surface of silicon wafers.

在諸如氣相沉積及濺鍍之PVD中,通常於約150℃形成膜,且使用熱固性樹脂之樹脂模製通常涉及於約220℃熱處理數小時。在該等高溫步驟期間,固化的黏著劑需要將晶圓保持在支撐件上。藉由背側研磨而在晶圓中產生的內部應力導致晶圓朝向經研磨的表面側翹曲。另一方面,黏著劑亦藉由例如紫外光輻照來經由固化步驟在內部累積應力。因此,固化的黏著劑必須是熱穩定的, 且亦需要具有足夠的黏著力(固持力)以克服內部應力,諸如將晶圓從固化的黏著劑分離的內部應力,甚至是在高溫步驟期間將晶圓從固化的黏著劑分離的內部應力。 In PVD such as vapor deposition and sputtering, films are typically formed at about 150°C, and resin molding using thermosetting resins typically involves heat treatment at about 220°C for several hours. During these high temperature steps, the cured adhesive is required to hold the wafer on the support. The internal stress created in the wafer by backside grinding causes the wafer to warp toward the ground surface side. Adhesives, on the other hand, also build up stress internally through a curing step by, for example, UV irradiation. Therefore, the cured adhesive must be thermally stable, It is also necessary to have sufficient adhesion (holding force) to overcome internal stresses, such as those separating the wafer from the cured adhesive, even during high temperature steps.

此外,在真空製程(諸如氣相沉積、濺鍍、或乾式蝕刻)中,當藉由在高溫及減壓下揮發或分解固化的黏著劑來產生除氣時,存在由於真空度降低造成的裝置內污染及膜品質劣化的風險。因此,期望的是固化的黏著劑在高溫環境中具有低除氣特性,例如,固化的黏著劑的質量損失係小的。 In addition, in vacuum processes such as vapor deposition, sputtering, or dry etching, when outgassing is generated by volatilizing or decomposing the cured adhesive at high temperature and reduced pressure, there are devices due to reduced vacuum Risk of internal fouling and deterioration of membrane quality. Therefore, it is desirable for the cured adhesive to have low outgassing properties in high temperature environments, eg, the mass loss of the cured adhesive is small.

所欲地,最終將固化的黏著劑從晶圓移除而沒有殘餘物。可將黏著劑控制添加劑(諸如聚矽氧化合物)添加至液體黏著劑以促進固化的黏著劑的剝離。然而,此類聚矽氧化合物不與液體黏著劑中的其他組分(諸如(甲基)丙烯酸化合物)相溶,且因此聚矽氧化合物的聚集物質可留在晶圓上,或者不同批次之間的黏著力可能廣泛變化。此外,從避免或減少晶圓表面上的矽氧烷污染的觀點來看,期望的是避免使用聚矽氧化合物。 Desirably, the cured adhesive is eventually removed from the wafer without residue. Adhesion control additives, such as polysiloxanes, can be added to the liquid adhesive to facilitate release of the cured adhesive. However, such polysiloxanes are not compatible with other components in the liquid adhesive, such as (meth)acrylic compounds, and thus aggregates of polysiloxane may remain on the wafer, or between different batches. The adhesion between them may vary widely. Furthermore, from the viewpoint of avoiding or reducing siloxane contamination on the wafer surface, it is desirable to avoid the use of polysiloxanes.

本發明人已發現用於暫時接合兩個基材(諸如晶圓及支撐件)的黏著劑的複數個要求可藉由選擇具有特定化學結構的原料、引入適當量之極性官能基、及調整固化的黏著劑之橡膠狀平坦區域中之儲存模數來實現。 The inventors have discovered that several requirements for an adhesive used to temporarily bond two substrates, such as a wafer and a support, can be achieved by selecting raw materials with specific chemical structures, introducing appropriate amounts of polar functional groups, and adjusting curing The storage modulus in the rubbery flat area of the adhesive is achieved.

本揭露提供了一種液體黏著劑,該液體黏著劑具有即使在高溫環境中亦足夠的黏著力(固持力)、具有高溫環境中的低除氣特性,且可形成可在熱處理之後輕易剝離的固化產物。 The present disclosure provides a liquid adhesive that has sufficient adhesion (holding force) even in a high temperature environment, has low outgassing properties in a high temperature environment, and can form a cure that can be easily peeled off after heat treatment product.

一實施例提供了一種液體黏著劑,該液體黏著劑包括60質量%或更多的至少一種由式(1)表示的酯化合物: An embodiment provides a liquid adhesive comprising 60% by mass or more of at least one ester compound represented by formula (1):

Figure 110134881-A0202-12-0005-4
Figure 110134881-A0202-12-0005-4

其中 in

R獨立地係包括經取代或未經取代之脂環基之二價基團, R is independently a divalent group including a substituted or unsubstituted alicyclic group,

Q獨立地係選自由以下所組成之群組的二價基團:經取代或未經取代之二價脂族基團、經取代或未經取代之二價芳族基團、經取代或未經取代之二價雜芳基、及其二或更多者之組合, Q is independently a divalent group selected from the group consisting of a substituted or unsubstituted divalent aliphatic group, a substituted or unsubstituted divalent aromatic group, a substituted or unsubstituted divalent aromatic group substituted divalent heteroaryl, and combinations of two or more thereof,

E獨立地係選自由以下所組成之群組的自由基可聚合基團:丙烯醯氧基及甲基丙烯醯氧基,且 E is independently a free radical polymerizable group selected from the group consisting of acryloxy and methacryloyloxy, and

n係1至10之整數, n is an integer from 1 to 10,

其中 in

該液體黏著劑中之極性官能基的總莫耳濃度係1×10-6mol/g至1.5×10-5mol/g, The total molar concentration of polar functional groups in the liquid adhesive is 1×10 -6 mol/g to 1.5×10 -5 mol/g,

該極性官能基係-OH、-COOH、由式(2)表示的基團: The polar functional groups are -OH, -COOH, groups represented by formula (2):

[化學式2]

Figure 110134881-A0202-12-0006-5
[Chemical formula 2]
Figure 110134881-A0202-12-0006-5

-Si(OR2)3-n(OH)n,其中R2係有機基團且n係1至3之整數;-P(O)(OR2)2-n(OH)n,其中R2係有機基團且n係1至2之整數;-OP(O)(OR2)2-n(OH)n,其中R2係有機基團且n係1至2之整數;-SH、環氧基、或-NH2,且 -Si(OR 2 ) 3-n (OH) n , wherein R 2 is an organic group and n is an integer from 1 to 3; -P(O)(OR 2 ) 2-n (OH) n , wherein R 2 is an organic group and n is an integer of 1 to 2; -OP(O)(OR 2 ) 2-n (OH) n , wherein R 2 is an organic group and n is an integer of 1 to 2; -SH, ring oxy, or -NH 2 , and

該液體黏著劑之固化產物於150℃至220℃的儲存模數係15MPa至35Mpa。 The storage modulus of the cured product of the liquid adhesive at 150° C. to 220° C. is 15 MPa to 35 Mpa.

另一實施例提供了一種層壓體,該層壓體包括基材、與該基材接觸的接合層,且包括該液體黏著劑之固化產物;光熱轉換層,該光熱轉換層包括光吸收劑及熱可分解樹脂,以及光學透明支撐件。 Another embodiment provides a laminate comprising a substrate, a bonding layer in contact with the substrate, and a cured product of the liquid adhesive; a light-to-heat conversion layer, the light-to-heat conversion layer comprising a light absorber and thermally decomposable resins, and optically transparent supports.

又另一實施例提供了一種生產半導體晶片之方法,該方法包括: Yet another embodiment provides a method of producing a semiconductor wafer, the method comprising:

在光學透明支撐件上施加光熱轉換層,該光熱轉換層包括光吸收劑及熱可分解樹脂; applying a light-to-heat conversion layer on the optically transparent support, the light-to-heat conversion layer comprising a light absorbing agent and a thermally decomposable resin;

提供半導體晶圓,該半導體晶圓包括具有電路圖案的電路表面及與該電路表面相對之非電路表面; providing a semiconductor wafer including a circuit surface having a circuit pattern and a non-circuit surface opposite the circuit surface;

施加一層包括光聚合起始劑之液體黏著劑至該半導體晶圓之該電路表面及該光學透明支撐件以使該液體黏著劑之該層與該半導體晶圓之該電路表面及該光學透明支撐件接觸; Applying a layer of liquid adhesive including a photopolymerization initiator to the circuit surface of the semiconductor wafer and the optically transparent support so that the layer of the liquid adhesive and the circuit surface of the semiconductor wafer and the optically transparent support contact;

藉由穿過該光學透明支撐件的紫外光輻照固化該液體黏著劑以形成接合層,並形成層壓體,該層壓體在外側之表面中包括該非電路表面; curing the liquid adhesive by ultraviolet radiation through the optically transparent support to form a tie layer and form a laminate including the non-circuit surface in an outer surface;

研磨該半導體晶圓之該非電路表面,直到該半導體晶圓具有所需厚度為止; grinding the non-circuit surface of the semiconductor wafer until the semiconductor wafer has a desired thickness;

從該非電路表面側將該經研磨的半導體晶圓切單,並將該經研磨的半導體晶圓切割成複數個半導體晶片; The ground semiconductor wafer is diced from the non-circuit surface side, and the ground semiconductor wafer is diced into a plurality of semiconductor wafers;

用輻射能輻照穿過該光學透明支撐件以將該光熱轉換層分解及分開成該複數個包括該接合層之半導體晶片及該光學透明支撐件;及 irradiating through the optically transparent support with radiant energy to decompose and separate the light-to-heat conversion layer into the plurality of semiconductor wafers including the bonding layer and the optically transparent support; and

按需要將該接合層自該等半導體晶片移除。 The bonding layer is removed from the semiconductor wafers as needed.

本揭露可提供一種液體黏著劑,該液體黏著劑即使在高溫環境中亦具有足夠的黏著力(固持力)、在高溫環境中具有低除氣特性,且可形成可在熱處理之後輕易剝離的固化產物。 The present disclosure can provide a liquid adhesive that has sufficient adhesive force (holding force) even in a high temperature environment, has low outgassing properties in a high temperature environment, and can form a cure that can be easily peeled off after heat treatment product.

須注意,上述描述不欲解讀為意指揭示本發明之所有實施例及與本發明相關之所有優點。 It should be noted that the above description is not to be construed as intended to disclose all embodiments of the invention and all advantages associated with the invention.

1:層壓體 1: Laminate

2:基材 2: Substrate

3:接合層 3: Bonding layer

4:光熱轉換層 4: Light-to-heat conversion layer

5:光學透明支撐件 5: Optically transparent support

〔圖1〕係一實施例之層壓體的示意截面圖。 [ Fig. 1 ] is a schematic cross-sectional view of a laminate of an example.

在下文中,出於舉例說明的目的,將參考附圖更詳細描述本發明之代表性實施例,但是本發明不限於該等實施例。 Hereinafter, for illustrative purposes, representative embodiments of the present invention will be described in more detail with reference to the accompanying drawings, but the present invention is not limited to these embodiments.

一實施例的液體黏著劑包含60質量%或更多的至少一種由式(1)表示的酯化合物: The liquid adhesive of one embodiment contains 60% by mass or more of at least one ester compound represented by the formula (1):

Figure 110134881-A0202-12-0008-6
Figure 110134881-A0202-12-0008-6

在式(1)中, In formula (1),

R獨立地係包括經取代或未經取代之脂環基之二價基團, R is independently a divalent group including a substituted or unsubstituted alicyclic group,

Q獨立地係選自由以下所組成之群組的二價基團:經取代或未經取代之二價脂族基團、經取代或未經取代之二價芳族基團、經取代或未經取代之二價雜芳基、及其二或更多者之組合, Q is independently a divalent group selected from the group consisting of a substituted or unsubstituted divalent aliphatic group, a substituted or unsubstituted divalent aromatic group, a substituted or unsubstituted divalent aromatic group substituted divalent heteroaryl, and combinations of two or more thereof,

E獨立地係選自由以下所組成之群組的自由基可聚合基團:丙烯醯氧基及甲基丙烯醯氧基,且 E is independently a free radical polymerizable group selected from the group consisting of acryloxy and methacryloyloxy, and

n係1至10之整數。 n is an integer from 1 to 10.

由式(1)表示之酯化合物在熱穩定性及與其他組分之混溶性方面係優異的。因此,由於液體黏著劑包括60質量%或更多的由式(1)表示的酯化合物,所以有可能賦予液體黏著劑之固化產物在高溫環境中的穩定性(對熱分解之抗性),亦即低除氣特性。此外,由於式(1)之酯化合物包括脂環基,所以亦有可能賦予液體黏著劑之固化產物適用於使用化學溶液之步驟的耐化學性,諸如CMP、濕式蝕刻、電解電鍍、無電鍍、及藉由微影蝕刻進行圖案形成。 The ester compound represented by the formula (1) is excellent in thermal stability and miscibility with other components. Therefore, since the liquid adhesive includes 60% by mass or more of the ester compound represented by the formula (1), it is possible to impart stability (resistance to thermal decomposition) in a high temperature environment to the cured product of the liquid adhesive, That is, low outgassing characteristics. In addition, since the ester compound of the formula (1) includes an alicyclic group, it is also possible to impart chemical resistance to the cured product of the liquid adhesive suitable for steps using chemical solutions, such as CMP, wet etching, electrolytic plating, electroless plating , and pattern formation by lithographic etching.

R獨立地係包括經取代或未經取代之脂環基之二價基團。在一實施例中,R係具有5至約20個碳原子且包括經取代或未經取代之環烷二基的二價基團。在另一實施例中,R係具有5至約12個碳原子且包括經取代或未經取代之環烷二基的二價基團。在一些實施例中,R係經取代或未經取代之環戊烷二基、經取代或未經取代之環己烷二基、經取代或未經取代之降莰烷二基、經取代或未經取代之降莰烯二基、經取代或未經取代之四環十二烷二基、或經取代或未經取代之四氫二環戊二烯二基,或者包括該等基團與具有1至10個碳原子之烷二基(例如,亞甲基、伸乙基、伸丙基、丁烷二基、己烷二基、庚烷二基、辛烷二基、及癸烷二基)組合的二價基團。其中一個亞甲基鍵結至四氫二環戊二烯二基之兩個末端中之每一末端的二價基團之實例包括具有以下結構之二價基團。在該式中,「*」表示具有相鄰基團之鍵結位置。 R is independently a divalent group including a substituted or unsubstituted alicyclic group. In one embodiment, R is a divalent group having 5 to about 20 carbon atoms and including substituted or unsubstituted cycloalkanediyl. In another embodiment, R is a divalent group having 5 to about 12 carbon atoms and including substituted or unsubstituted cycloalkanediyl. In some embodiments, R is substituted or unsubstituted cyclopentanediyl, substituted or unsubstituted cyclohexanediyl, substituted or unsubstituted norbornanediyl, substituted or unsubstituted Unsubstituted norbornediyl, substituted or unsubstituted tetracyclododecanediyl, or substituted or unsubstituted tetrahydrodicyclopentadiendiyl, or groups including Alkanediyl having 1 to 10 carbon atoms (eg, methylene, ethylidene, propylidene, butanediyl, hexanediyl, heptanediyl, octanediyl, and decanediyl group) combined divalent groups. Examples of the divalent group in which one methylene group is bonded to each of the two terminals of the tetrahydrodicyclopentadiene diyl group include divalent groups having the following structures. In this formula, "*" represents a bonding position having an adjacent group.

Figure 110134881-A0202-12-0010-7
Figure 110134881-A0202-12-0010-7

Q獨立地係選自由以下所組成之群組的二價基團:經取代或未經取代之二價脂族基團、經取代或未經取代之二價芳族基團、經取代或未經取代之二價雜芳基、及其二或更多者之組合。在一實施例中,Q獨立地係具有1至30個碳原子之經取代或未經取代之二價脂族基團、具有6至約14個碳原子之經取代或未經取代之二價芳族基團、具有3至約14個碳原子之經取代或未經取代之雜芳族基團、或其組合。 Q is independently a divalent group selected from the group consisting of a substituted or unsubstituted divalent aliphatic group, a substituted or unsubstituted divalent aromatic group, a substituted or unsubstituted divalent aromatic group Substituted divalent heteroaryl, and combinations of two or more thereof. In one embodiment, Q is independently a substituted or unsubstituted divalent aliphatic group having 1 to 30 carbon atoms, a substituted or unsubstituted divalent group having 6 to about 14 carbon atoms An aromatic group, a substituted or unsubstituted heteroaromatic group having 3 to about 14 carbon atoms, or a combination thereof.

在另一實施例中,Q係經取代或未經取代之二價脂族基團,該經取代或未經取代之二價脂族基團包括經取代或未經取代之脂環基。在又另一實施例中,Q係經取代或未經取代之環戊烷二基、經取代或未經取代之環己烷二基、經取代或未經取代之降莰烷二基、經取代或未經取代之降莰烯二基、經取代或未經取代之四環十二烷二基、或經取代或未經取代之四氫二環戊二烯二基,或者包含該等基團與具有1至10個碳原子之烷二基(例如,亞甲基、伸乙基、伸丙基、丁烷二基、己烷二基、庚烷二基、辛烷二基、及癸烷二基)組合的二價脂族基團。 In another embodiment, Q is a substituted or unsubstituted divalent aliphatic group including a substituted or unsubstituted alicyclic group. In yet another embodiment, Q is substituted or unsubstituted cyclopentanediyl, substituted or unsubstituted cyclohexanediyl, substituted or unsubstituted norbornanediyl, Norbornediyl, substituted or unsubstituted, tetracyclododecanediyl, substituted or unsubstituted, or tetrahydrodicyclopentadienediyl, substituted or unsubstituted, or inclusive groups and alkanediyl groups having 1 to 10 carbon atoms (e.g., methylene, ethylidene, propylidene, butanediyl, hexanediyl, heptanediyl, octanediyl, and decanediyl) alkanediyl) combination of divalent aliphatic groups.

在另一實施例中,Q係經取代或未經取代之伸苯基或經取代或未經取代之伸萘基。 In another embodiment, Q is substituted or unsubstituted phenylene or substituted or unsubstituted naphthylene.

R及Q之取代基的實例包括具有1至100個碳原子之直鏈或支鏈烷基、具有2至100個碳原子之直鏈或支鏈烯基、具有2至100個碳原子之直鏈或支鏈炔基、羥基、側氧基、具有1至100個碳原子之烷氧基、巰基、具有5至20個碳原子之環烷基、具有6至14個碳原子之芳族基團、具有3至14個碳原子之雜芳族基團、具有6至14個碳原子之芳氧基、鹵素原子、具有1至100個碳原子之直鏈或支鏈鹵烷基、氰基、硝基、硝酮基、胺基、醯胺基、-C(O)H、-C(O)-、-S-、-S(O)2-、-OC(O)-O-、-NR1-C(O)-、-NR1-C(O)-NR1-、-OC(O)-NR1-(R1係H或具有自1至8個碳原子之烷基)、醯基、氧醯基、羧基、胺甲酸酯基、磺醯基、磺醯胺基、及硫醯基。 Examples of substituents for R and Q include straight-chain or branched-chain alkyl groups having 1 to 100 carbon atoms, straight-chain or branched-chain alkenyl groups having 2 to 100 carbon atoms, straight-chain or branched chain alkenyl groups having 2 to 100 carbon atoms Chain or branched alkynyl, hydroxyl, pendant oxy, alkoxy with 1 to 100 carbon atoms, mercapto, cycloalkyl with 5 to 20 carbon atoms, aromatic group with 6 to 14 carbon atoms groups, heteroaromatic groups having 3 to 14 carbon atoms, aryloxy groups having 6 to 14 carbon atoms, halogen atoms, straight or branched chain haloalkyl groups having 1 to 100 carbon atoms, cyano groups , nitro, nitrone, amine, amide, -C(O)H, -C(O)-, -S-, -S(O) 2 -, -OC(O)-O-, -NR 1 -C(O)-, -NR 1 -C(O)-NR 1 -, -OC(O)-NR 1 - (R 1 is H or an alkyl group having from 1 to 8 carbon atoms) , acyl group, oxo group, carboxyl group, carbamate group, sulfonyl group, sulfonamide group, and thiol group.

E獨立地係選自由以下所組成之群組的自由基可聚合基團:丙烯醯氧基及甲基丙烯醯氧基。在一實施例中,在式(1)之酯化合物中,一個E係丙烯醯氧基,另一個E係甲基丙烯醯氧基。 E is independently a free radical polymerizable group selected from the group consisting of acryloxy and methacryloyloxy. In one embodiment, in the ester compound of formula (1), one E is acryloxy, and the other E is methacryloyloxy.

n係1至約10之整數。在一實施例中,n係1至7之整數。在另一實施例中,n係1至5之整數。在又另一實施例中,n係1至3之整數。在又另一實施例中,n係1或2。 n is an integer from 1 to about 10. In one embodiment, n is an integer from 1 to 7. In another embodiment, n is an integer from 1 to 5. In yet another embodiment, n is an integer from 1 to 3. In yet another embodiment, n is 1 or 2.

在一實施例中,式(1)之酯化合物不包括醚鍵。具有醚鍵的式(1)之酯化合物具有低熱穩定性,且在高溫環境中由於固化產物之分解產物而傾向於增加除氣。不包括醚鍵的式(1)之酯化合物可有利地賦予液體黏著劑之固化產物低除氣特性。 In one embodiment, the ester compound of formula (1) does not include ether linkages. The ester compound of the formula (1) having an ether bond has low thermal stability and tends to increase outgassing in a high temperature environment due to the decomposition product of the cured product. The ester compound of formula (1) which does not include an ether bond can advantageously impart low outgassing properties to the cured product of the liquid adhesive.

式(1)之酯化合物之數量平均分子量可約大於或等於500,或約大於或等於1000。式(1)之酯化合物之數量平均分子量可約小於或等於8000,或約小於或等於4000。數量平均分子量係藉由以聚苯乙烯標準品校準之凝膠滲透層析術(gel permeation chromatography,GPC)測量而獲得。 The number average molecular weight of the ester compound of formula (1) may be about 500 or more, or about 1000 or more. The number average molecular weight of the ester compound of formula (1) may be about 8,000 or less, or about 4,000 or less. Number average molecular weights were obtained by gel permeation chromatography (GPC) measurements calibrated with polystyrene standards.

式(1)之一些例示性酯化合物係指示如下。 Some exemplary ester compounds of formula (1) are indicated below.

Figure 110134881-A0202-12-0012-8
Figure 110134881-A0202-12-0012-8

Figure 110134881-A0202-12-0012-9
Figure 110134881-A0202-12-0012-9

Figure 110134881-A0202-12-0013-10
Figure 110134881-A0202-12-0013-10

Figure 110134881-A0202-12-0013-11
Figure 110134881-A0202-12-0013-11

Figure 110134881-A0202-12-0013-12
Figure 110134881-A0202-12-0013-12

Figure 110134881-A0202-12-0014-13
Figure 110134881-A0202-12-0014-13

Figure 110134881-A0202-12-0014-14
Figure 110134881-A0202-12-0014-14

Figure 110134881-A0202-12-0014-15
Figure 110134881-A0202-12-0014-15

Figure 110134881-A0202-12-0015-16
Figure 110134881-A0202-12-0015-16

Figure 110134881-A0202-12-0015-17
Figure 110134881-A0202-12-0015-17

Figure 110134881-A0202-12-0015-18
Figure 110134881-A0202-12-0015-18

Figure 110134881-A0202-12-0016-19
Figure 110134881-A0202-12-0016-19

Figure 110134881-A0202-12-0016-20
Figure 110134881-A0202-12-0016-20

Figure 110134881-A0202-12-0016-21
Figure 110134881-A0202-12-0016-21

Figure 110134881-A0202-12-0017-22
Figure 110134881-A0202-12-0017-22

Figure 110134881-A0202-12-0017-23
Figure 110134881-A0202-12-0017-23

Figure 110134881-A0202-12-0017-24
Figure 110134881-A0202-12-0017-24

Figure 110134881-A0202-12-0018-25
Figure 110134881-A0202-12-0018-25

Figure 110134881-A0202-12-0018-26
Figure 110134881-A0202-12-0018-26

Figure 110134881-A0202-12-0019-27
Figure 110134881-A0202-12-0019-27

該液體黏著劑可包括式(1)之酯化合物,該式(1)之酯化合物的量係約62質量%或更大、約65質量%或更大、或約70質量%或更大。該液體黏著劑可包括式(1)之酯化合物,該式(1)之酯化合物的量係約95質量%或更小、約90質量%或更小、或約85質量%或更小。 The liquid adhesive may include the ester compound of formula (1) in an amount of about 62 mass % or more, about 65 mass % or more, or about 70 mass % or more. The liquid adhesive may include the ester compound of formula (1) in an amount of about 95% by mass or less, about 90% by mass or less, or about 85% by mass or less.

就總莫耳濃度而言,液體黏著劑包括×10-6mol/g至1.5×10-5mol/g的極性官能基。在本揭露中,「極性官能基」係-OH、-COOH、由式(2)表示的基團: In terms of total molar concentration, the liquid adhesive includes x 10 -6 mol/g to 1.5 x 10 -5 mol/g of polar functional groups. In this disclosure, "polar functional groups" are -OH, -COOH, groups represented by formula (2):

Figure 110134881-A0202-12-0019-28
Figure 110134881-A0202-12-0019-28

-Si(OR2)3-n(OH)n(其中R2係有機基團,n係1至3之整數)、-P(O)(OR2)2-n(OH)n(其中R2係有機基團且n係1至2之整數)、-OP(O)(OR2)2-n(OH)n(其中R2係有機基團且n係1至2之整數)、-SH、環氧基、或-NH2。R2之有機基團的實例包括具有1至30個碳原子之直鏈或支鏈烷基、具有2至30個碳原子之直鏈或支鏈烯基、具有2至30個碳原子之直鏈或支鏈炔基、具有5至20個碳原子之環烷基、具有6至14個碳原子之芳族基團、具有3至14個碳原子之雜芳族基團、及具有1至30個碳原子之直鏈或支鏈鹵烷基。由於可精確地控制液體黏著劑之固化產物的黏著力(固持力),所以極性官能基較佳為OH、-COOH、由式(2)表示之基團、及-Si(OR2)3-n(OH)n,且由於-OH在工業上容易可得,所以-OH更佳。 -Si(OR 2 ) 3-n (OH) n (wherein R 2 is an organic group, and n is an integer from 1 to 3), -P(O)(OR 2 ) 2-n (OH) n (wherein R 2 is an organic group and n is an integer from 1 to 2), -OP(O)(OR 2 ) 2-n (OH) n (wherein R 2 is an organic group and n is an integer from 1 to 2), - SH, epoxy, or -NH2 . Examples of organic groups for R include straight - chain or branched-chain alkyl groups having 1 to 30 carbon atoms, straight-chain or branched-chain alkenyl groups having 2 to 30 carbon atoms, straight-chain or branched-chain alkenyl groups having 2 to 30 carbon atoms Chain or branched alkynyl groups, cycloalkyl groups having 5 to 20 carbon atoms, aromatic groups having 6 to 14 carbon atoms, heteroaromatic groups having 3 to 14 carbon atoms, and 1 to 14 carbon atoms Straight or branched chain haloalkyl of 30 carbon atoms. Since the adhesive force (holding force) of the cured product of the liquid adhesive can be precisely controlled, the polar functional group is preferably OH, -COOH, a group represented by the formula (2), and -Si(OR 2 ) 3- n (OH) n , and since -OH is readily available in industry, -OH is more preferred.

如下文所述,與將液體黏著劑之固化產物在特定溫度範圍中的儲存模數設定至特定範圍組合,將液體黏著劑中之極性官能基的總莫耳濃度設定為1×10-6mol/g至1.5×10-5mol/g,且因此有可能獲得具有在高溫環境中的黏著力(固持力)及在高水平下以相容方式熱處理之後的可剝離性的固化產物。 As described below, in combination with setting the storage modulus of the cured product of the liquid adhesive in a specific temperature range to a specific range, the total molar concentration of polar functional groups in the liquid adhesive was set to 1×10 −6 mol /g to 1.5×10 −5 mol/g, and thus it is possible to obtain a cured product having adhesive force (holding force) in a high temperature environment and releasability after heat treatment in a compatible manner at a high level.

液體黏著劑中極性官能基的總莫耳濃度可大於或等於1.2×10-6mol/g,或大於或等於1.5×10-6mol。液體黏著劑中之特定極性官能基的總莫耳濃度可小於或等於1.2×10-5mol/g,或小於或等於1×10-5mol/g。 The total molar concentration of polar functional groups in the liquid adhesive may be greater than or equal to 1.2×10 −6 mol/g, or greater than or equal to 1.5×10 −6 mol. The total molar concentration of the specific polar functional groups in the liquid adhesive may be less than or equal to 1.2×10 −5 mol/g, or less than or equal to 1×10 −5 mol/g.

關於液體黏著劑中之極性官能基的總莫耳濃度,羧酸的量係藉由JIS K 0070:1992所指定的中性滴定法判定,且羥基 的量係藉由電位滴定法判定。此外,關於固化的黏著劑中之極性官能基的總莫耳濃度,羧酸的量及羥基的量係藉由以下方式判定的:藉由使用氫氧化四甲銨的反應熱解GC/MS方法分別指定甲基羧酸及甲基醚衍生物。關於測量條件,在藉由將約5微升氫氧化四甲銨溶液作為反應試劑加入至數mg樣本中並藉由熱分解裝置於500℃執行快速加熱衍生化來甲基化末端羧酸及末端羥基的同時偵測熱分解產物,且因此判定羧酸之量及羥基之量。作為反應試劑,亦有效地使用了氫氧化四乙銨溶液或氫氧化四丁銨溶液。 Regarding the total molar concentration of polar functional groups in the liquid adhesive, the amount of carboxylic acid was determined by the neutral titration method specified in JIS K 0070:1992, and the hydroxyl group The amount is determined by potentiometric titration. In addition, with respect to the total molar concentration of polar functional groups in the cured adhesive, the amount of carboxylic acid and the amount of hydroxyl groups were determined by a reactive pyrolysis GC/MS method using tetramethylammonium hydroxide Methyl carboxylic acid and methyl ether derivatives are designated respectively. Regarding the measurement conditions, the terminal carboxylic acid and the terminal were methylated by adding about 5 microliters of tetramethylammonium hydroxide solution as a reaction reagent to several mg of the sample and performing rapid heating derivatization by a thermal decomposition device at 500°C The simultaneous detection of thermal decomposition products of hydroxyl groups, and thus the amount of carboxylic acid and the amount of hydroxyl groups, are determined. As a reaction reagent, a tetraethylammonium hydroxide solution or a tetrabutylammonium hydroxide solution is also effectively used.

極性官能基可衍生自由式(1)表示之酯化合物、或液體黏著劑之其他組分(諸如寡聚物或聚合物),或除了式(1)之酯化合物以外的單官能或多官能(甲基)丙烯酸化合物。 Polar functional groups can be derived from ester compounds represented by formula (1), or other components of the liquid adhesive (such as oligomers or polymers), or monofunctional or polyfunctional ( Meth)acrylic acid compound.

在一實施例中,液體黏著劑亦包含具有極性官能基之多官能(甲基)丙烯酸化合物。不受限於任何理論,具有極性官能基之多官能(甲基)丙烯酸化合物有效地改善了固化產物在高溫環境中的黏著力(固持力)。此外,由於具有極性官能基之多官能(甲基)丙烯酸化合物具有複數個可聚合官能基,所以具有極性官能基之多官能(甲基)丙烯酸化合物在固化液體黏著劑的時間與其他可聚合組分反應,且易於用固化產物緊固。因此,可減少固化產物在高溫環境中的除氣。具有極性官能基之多官能(甲基)丙烯酸化合物的實例包括三羥甲基丙烷二(甲基)丙烯酸酯、新戊四醇二(甲基)丙烯酸酯、新戊四醇三(甲基)丙烯酸酯、異三聚氰酸EO改性的三(甲基)丙烯酸酯、二三羥甲基丙烷二(甲基)丙烯酸酯、二三羥甲基丙烷三 (甲基)丙烯酸酯、二新戊四醇四(甲基)丙烯酸酯、及二新戊四醇五(甲基)丙烯酸酯。隨著可聚合官能基的數目增加,即使是少量的加入亦容易地地影響黏著劑在固化之後的儲存模數,且因此雙官能(甲基)丙烯酸化合物及三官能(甲基)丙烯酸化合物是更佳的。由於新戊四醇三(甲基)丙烯酸酯在工業上容易地可用,因此具有極性官能基之多官能(甲基)丙烯酸化合物較佳係新戊四醇三(甲基)丙烯酸酯。 In one embodiment, the liquid adhesive also includes a polyfunctional (meth)acrylic compound having polar functional groups. Without being bound by any theory, the polyfunctional (meth)acrylic compound having polar functional groups effectively improves the adhesion (holding force) of the cured product in a high temperature environment. In addition, since the polyfunctional (meth)acrylic compound having a polar functional group has a plurality of polymerizable functional groups, the polyfunctional (meth)acrylic compound having a polar functional group is not as effective as other polymerizable groups during the curing time of the liquid adhesive. Split reaction, and easy to fasten with the cured product. Therefore, outgassing of the cured product in a high temperature environment can be reduced. Examples of the polyfunctional (meth)acrylic compound having a polar functional group include trimethylolpropane di(meth)acrylate, neotaerythritol di(meth)acrylate, neotaerythritol tri(meth)acrylate Acrylates, EO-modified tri(meth)acrylates, ditrimethylolpropane di(meth)acrylates, ditrimethylolpropane triacrylates (Meth)acrylate, Dipiveaerythritol tetra(meth)acrylate, and Dipiveaerythritol penta(meth)acrylate. As the number of polymerizable functional groups increases, even a small amount of addition can easily affect the storage modulus of the adhesive after curing, and thus difunctional (meth)acrylic compounds and trifunctional (meth)acrylic compounds are better. Since neotaerythritol tri(meth)acrylate is easily available in industry, the polyfunctional (meth)acrylic compound having polar functional groups is preferably neotaerythritol tri(meth)acrylate.

液體黏著劑可包含具有極性官能基之多官能(甲基)丙烯酸化合物,該具有極性官能基之多官能(甲基)丙烯酸化合物的量係約0.01質量%或更大、約0.02質量%或更大、或約0.04質量%或更大。液體黏著劑可包括具有極性官能基之多官能(甲基)丙烯酸化合物,該具有極性官能基之多官能(甲基)丙烯酸化合物的量係約0.5質量%或更少、約0.45質量%或更少、或約0.4質量%或更少。 The liquid adhesive may contain a polyfunctional (meth)acrylic compound having a polar functional group in an amount of about 0.01 mass % or more, about 0.02 mass % or more large, or about 0.04 mass % or more. The liquid adhesive may include a polyfunctional (meth)acrylic compound having a polar functional group in an amount of about 0.5 mass % or less, about 0.45 mass % or more less, or about 0.4 mass % or less.

液體黏著劑可包括除式(1)之酯化合物以外的寡聚物或聚合物。此類寡聚物或聚合物可有利地用來調整固化產物的機械特性,諸如在高溫區域中之儲存模數。此類寡聚物或聚合物較佳地僅藉由即使在高溫環境中亦穩定的鍵形成。此類寡聚物及聚合物之實例包括1,6-己二醇之丙烯酸多聚體酯。 The liquid adhesive may include oligomers or polymers other than the ester compound of formula (1). Such oligomers or polymers can be advantageously used to adjust mechanical properties of the cured product, such as storage modulus in high temperature regions. Such oligomers or polymers are preferably formed only by bonds that are stable even in high temperature environments. Examples of such oligomers and polymers include acrylic polymer esters of 1,6-hexanediol.

液體黏著劑可包含除式(1)之酯化合物以外的寡聚物或聚合物,該寡聚物或聚合物的總量係約5質量%或更大、或約8質量%或更大。液體黏著劑可包含除式(1)之酯化合物以外的寡聚物 或聚合物,該寡聚物或聚合物的總量係約20質量%或更少、或約15質量%或更少。 The liquid adhesive may contain oligomers or polymers other than the ester compound of formula (1) in a total amount of about 5% by mass or more, or about 8% by mass or more. The liquid adhesive may contain oligomers other than the ester compound of formula (1) or polymer, the total amount of the oligomer or polymer is about 20 mass % or less, or about 15 mass % or less.

液體黏著劑可包含雙官能(甲基)丙烯酸單體。雙官能(甲基)丙烯酸單體可例如用於將交聯結構引入固化產物中並調整固化產物之橡膠狀平坦區域中的儲存模數。雙官能(甲基)丙烯酸單體之實例包括1,6-己二醇二(甲基)丙烯酸酯、1,9-壬二醇(二)甲基丙烯酸酯、雙酚A二(甲基)丙烯酸酯、乙氧基化雙酚A二丙烯酸酯、丙氧基化雙酚A二丙烯酸酯、2-[5-乙基-5-[(丙烯醯氧基)甲基]-1,3-二

Figure 110134881-A0202-12-0023-37
烷-2-基]-2,2-二甲基乙基丙烯酸酯、及三環[5.2.1.02,6]癸二甲醇二(甲基)丙烯酸酯。在本揭露中,具有極性官能基之雙官能(甲基)丙烯酸單體被分類為具有極性官能基之多官能(甲基)丙烯酸化合物。 The liquid adhesive may contain bifunctional (meth)acrylic monomers. Difunctional (meth)acrylic monomers can be used, for example, to introduce a cross-linked structure into the cured product and to adjust the storage modulus in the rubbery flat regions of the cured product. Examples of difunctional (meth)acrylic monomers include 1,6-hexanediol di(meth)acrylate, 1,9-nonanediol(di)methacrylate, bisphenol A di(meth)acrylate Acrylates, Ethoxylated Bisphenol A Diacrylate, Propoxylated Bisphenol A Diacrylate, 2-[5-ethyl-5-[(acryloyloxy)methyl]-1,3- two
Figure 110134881-A0202-12-0023-37
Alk-2-yl]-2,2-dimethylethylacrylate, and tricyclo[ 5.2.1.02,6 ]decanedimethanol di(meth)acrylate. In the present disclosure, bifunctional (meth)acrylic monomers having polar functional groups are classified as polyfunctional (meth)acrylic compounds having polar functional groups.

液體黏著劑可包含雙官能(甲基)丙烯酸單體,該雙官能(甲基)丙烯酸單體的量係約5質量%或更大、約10質量%或更大、或約14質量%或更大。液體黏著劑可包含雙官能(甲基)丙烯酸單體,該雙官能(甲基)丙烯酸單體的量係約40質量%或更少、約35質量%或更少、或約30質量%或更少。 The liquid adhesive may comprise a difunctional (meth)acrylic monomer in an amount of about 5 mass % or more, about 10 mass % or more, or about 14 mass % or bigger. The liquid adhesive may comprise a difunctional (meth)acrylic monomer in an amount of about 40 mass % or less, about 35 mass % or less, or about 30 mass % or less.

液體黏著劑可包含單官能(甲基)丙烯酸單體。單官能(甲基)丙烯酸單體可根據應用在適當範圍內調整液體黏著劑的黏度。單官能(甲基)丙烯酸單體之實例包括(甲基)丙烯酸烷基酯,諸如(甲基)丙烯酸丁酯、(甲基)丙烯酸戊酯、(甲基)丙烯酸己酯、(甲基)丙烯酸庚酯、(甲基)丙烯酸辛酯、(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸壬酯、(甲基)丙烯酸癸酯、及(甲基)丙烯酸十二烷基酯; 脂環(甲基)丙烯酸酯,諸如(甲基)丙烯酸環己酯;芳族(甲基)丙烯酸酯,諸如(甲基)丙烯酸苯基及(甲基)丙烯酸苯基乙酯;及具有極性官能基之單官能(甲基)丙烯酸酯,諸如(甲基)丙烯酸2-羥乙酯、(甲基)丙烯酸3-羥丙酯、(甲基)丙烯酸2-羥基-3-苯氧基丙酯、2-(甲基)丙烯醯氧基乙基-2-羥基乙基鄰苯二甲酸、2-(甲基)丙烯醯氧基乙基六氫鄰苯二甲酸、2-(甲基)丙烯醯氧基乙基琥珀酸、及(甲基)丙烯醯氧基丙基三甲氧基矽烷。 The liquid adhesive may contain monofunctional (meth)acrylic monomers. Monofunctional (meth)acrylic monomers can adjust the viscosity of the liquid adhesive within an appropriate range according to the application. Examples of monofunctional (meth)acrylic monomers include alkyl (meth)acrylates such as butyl (meth)acrylate, amyl (meth)acrylate, hexyl (meth)acrylate, (meth)acrylate Heptyl acrylate, octyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, nonyl (meth)acrylate, decyl (meth)acrylate, and dodecyl (meth)acrylate ester; Alicyclic (meth)acrylates such as cyclohexyl (meth)acrylate; aromatic (meth)acrylates such as phenyl (meth)acrylate and phenylethyl (meth)acrylate; and polar Monofunctional (meth)acrylates of functional groups, such as 2-hydroxyethyl (meth)acrylate, 3-hydroxypropyl (meth)acrylate, 2-hydroxy-3-phenoxypropyl (meth)acrylate Esters, 2-(meth)acryloyloxyethyl-2-hydroxyethylphthalic acid, 2-(meth)acryloyloxyethylhexahydrophthalic acid, 2-(methyl) Acryloyloxyethylsuccinic acid, and (meth)acrylooxypropyltrimethoxysilane.

液體黏著劑可包含單官能(甲基)丙烯酸單體,該單官能(甲基)丙烯酸單體的量係約3質量%或更大、約7質量%或更大、或約10質量%或更大。液體黏著劑可包含單官能(甲基)丙烯酸單體,該單官能(甲基)丙烯酸單體的量係約40質量%或更少、約30質量%或更少、或約20質量%或更少。 The liquid adhesive may comprise a monofunctional (meth)acrylic monomer in an amount of about 3 mass % or more, about 7 mass % or more, or about 10 mass % or bigger. The liquid adhesive may contain a monofunctional (meth)acrylic monomer in an amount of about 40 mass % or less, about 30 mass % or less, or about 20 mass % or less.

在一實施例中,液體黏著劑包括聚合起始劑。聚合起始劑之實例包括光聚合起始劑及熱聚合起始劑。 In one embodiment, the liquid adhesive includes a polymerization initiator. Examples of the polymerization initiator include photopolymerization initiators and thermal polymerization initiators.

光聚合起始劑係在液體黏著劑藉由紫外光輻照而固化的應用中使用。光聚合起始劑之實例包括苯偶烟衍生物、苄基縮酮、α,α-二烷氧基乙醯苯、α-羥烷基苯酮(α-hydroxyalkylphenone)、α-胺基烷基苯酮、單醯基氧化膦、titanosen化合物、二苯甲酮與胺之組合、及米其勒酮(Michler's ketone)。 Photopolymerization initiators are used in applications where liquid adhesives are cured by UV light irradiation. Examples of photopolymerization initiators include benzoin derivatives, benzyl ketals, α,α-dialkoxyacetoxybenzene, α-hydroxyalkylphenone, α-aminoalkyl Benzophenones, monoacylphosphine oxides, titanosen compounds, combinations of benzophenones and amines, and Michler's ketones.

液體黏著劑可包含光聚合起始劑,該光聚合起始劑的量係約0.1質量%或更大、約0.2質量%或更大、或約0.5質量% 或更大。液體黏著劑可包含光聚合起始劑,該光聚合起始劑的量係約5質量%或更少、約3質量%或更少、或約2質量%或更少。 The liquid adhesive may contain a photopolymerization initiator in an amount of about 0.1 mass % or more, about 0.2 mass % or more, or about 0.5 mass % or larger. The liquid adhesive may contain a photopolymerization initiator in an amount of about 5% by mass or less, about 3% by mass or less, or about 2% by mass or less.

熱聚合起始劑係在液體黏著劑藉由加熱固化的應用中使用。熱聚合起始劑之實例包括過氧化物,諸如過氧化二異丙苯、過氧化二苯甲醯、過氧化2-丁酮、過苯甲酸三級丁酯、二三級丁基過氧化物、2,5-雙(三級丁基過氧)-2,5-二甲基己烷、雙(三級丁基過氧異丙基)苯、及三級丁基過氧化氫;及偶氮化合物,諸如2,2'-偶氮雙(2-甲基-丙腈)、2,2'-偶氮雙(2-甲基丁腈)、及1,1'-偶氮雙(環己烷甲腈)。 Thermal polymerization initiators are used in applications where liquid adhesives are cured by heating. Examples of thermal polymerization initiators include peroxides such as dicumyl peroxide, dibenzoyl peroxide, 2-butanone peroxide, tertiary butyl perbenzoate, ditertiary butyl peroxide , 2,5-bis(tertiarybutylperoxy)-2,5-dimethylhexane, bis(tertiarybutylperoxyisopropyl)benzene, and tertiarybutylhydroperoxide; and Nitrogen compounds such as 2,2'-azobis(2-methyl-propionitrile), 2,2'-azobis(2-methylbutyronitrile), and 1,1'-azobis(cyclo hexanecarbonitrile).

液體黏著劑可包括溶劑。溶劑之實例包括酮,諸如丙酮、甲乙酮、環己酮;酯,諸如乙酸乙酯及乙酸丁酯;以及醇,諸如乙醇及丁醇。 Liquid adhesives may include solvents. Examples of solvents include ketones such as acetone, methyl ethyl ketone, cyclohexanone; esters such as ethyl acetate and butyl acetate; and alcohols such as ethanol and butanol.

在一實施例中,該液體黏著劑係不含溶劑的。不含溶劑的液體黏著劑可適用於液體黏著劑在封閉空間中固化的應用。 In one embodiment, the liquid adhesive is solvent-free. Solvent-free liquid adhesives are suitable for applications where the liquid adhesive cures in enclosed spaces.

在一實施例中,該液體黏著劑實質上不包括選自由聚矽氧化合物及氟化合物所組成之群組的低表面能化合物。本揭露之液體黏著劑可藉由組合預定量的由式(1)表示的酯化合物、極性官能基之含量、及固化產物之黏彈特性而賦予固化產物在熱處理之後的可剝離性,而無需使用此類低表面能化合物。因此,在此實施例中,有可能抑制或預防沉澱成為低表面能化合物在固化產物中的聚集物質,該聚集物質與液體黏著劑中之組分不可混溶。在本揭露中,「實質上不包括」意指液體黏著劑中低表面能化合物的含量小 於約5質量%、小於約2質量%、小於約1質量%、或小於約0.1質量%。在另一實施例中,液體黏著劑不包括低表面能化合物。 In one embodiment, the liquid adhesive is substantially free of low surface energy compounds selected from the group consisting of polysiloxanes and fluorine compounds. The liquid adhesive of the present disclosure can impart peelability to the cured product after heat treatment by combining a predetermined amount of the ester compound represented by the formula (1), the content of the polar functional group, and the viscoelastic property of the cured product without requiring Use such low surface energy compounds. Therefore, in this embodiment, it is possible to inhibit or prevent precipitation as aggregated species of low surface energy compounds in the cured product, which aggregated species are immiscible with the components in the liquid adhesive. In the present disclosure, "substantially not including" means that the content of the low surface energy compound in the liquid adhesive is small At about 5 mass %, less than about 2 mass %, less than about 1 mass %, or less than about 0.1 mass %. In another embodiment, the liquid adhesive does not include low surface energy compounds.

液體黏著劑亦可包括增稠劑、塑化劑、分散劑、填料、阻燃劑、或熱老化抑制劑作為可選添加劑。 Liquid adhesives may also include thickeners, plasticizers, dispersants, fillers, flame retardants, or heat aging inhibitors as optional additives.

液體黏著劑可藉由混合上述組分來產生。在室溫下不流動的寡聚物或聚合物可經加熱,然後與其他組分混合。 Liquid adhesives can be produced by mixing the above components. Oligomers or polymers that do not flow at room temperature can be heated and then mixed with the other components.

在一實施例中,液體黏著劑於25℃之黏度係約大於或等於100mPa.s且約小於或等於10000mPa.s。在液體黏著劑係藉由旋轉塗佈施加的情況下,可藉由將液體黏著劑於25℃之黏度設定為約大於或等於1000mPa.s、或約大於或等於2000mPa.s且約小於或等於8000mPa.s、或約小於或等於5000mPa.s來將液體黏著劑均勻施加至具有所需厚度的晶圓上。黏度係藉由以下方式獲得的值:在25℃之溫度、35mm之錐體直徑、1度之錐角、及1度/分鐘之轉速的條件下使用錐板型黏度計(HAAKE(商品名)Leometer,Thermo Fisher Scientific K.K.(Minato-ku,Tokyo,Japan),將液體黏著劑設定在錐體與板之間並等待60秒,隨後在測量開始後30秒內讀取值。 In one embodiment, the viscosity of the liquid adhesive at 25°C is about greater than or equal to 100mPa. s and about less than or equal to 10000mPa. s. In the case where the liquid adhesive is applied by spin coating, the viscosity of the liquid adhesive at 25° C. can be set to be about greater than or equal to 1000 mPa. s, or about greater than or equal to 2000mPa. s and about less than or equal to 8000mPa. s, or about less than or equal to 5000mPa. s to uniformly apply the liquid adhesive to the wafer with the desired thickness. The viscosity is a value obtained by using a cone-plate viscometer (HAAKE (trade name) under the conditions of a temperature of 25° C., a cone diameter of 35 mm, a cone angle of 1 degree, and a rotation speed of 1 degree/min. Leometer, Thermo Fisher Scientific K.K. (Minato-ku, Tokyo, Japan), set the liquid adhesive between the cone and the plate and wait 60 seconds, then read the value within 30 seconds after the start of the measurement.

在一實施例中,液體黏著劑之濁度係約小於或等於1500NTU。可使用液體黏著劑之濁度作為指數,該指數指示當液體黏著劑被固化時不溶組分是沉澱還是聚集。從此視角,液體黏著劑之濁度較佳係約小於或等於1000NTU,且更佳約小於或等於500NTU。液體黏著劑的濁度係藉由以下方式判定的:使用桌上型濁度 計2100N(Hach),其中將單位設定為NTU,測量範圍係自動化的,信號平均係開啟的,且比率處理係開啟的;以及將液體黏著劑添加至樣本槽之標記線;將樣本槽設置在桌上型濁度計上;以及在設定後20秒內在數值穩定後讀取值。 In one embodiment, the turbidity of the liquid adhesive is about less than or equal to 1500 NTU. The turbidity of the liquid adhesive can be used as an index indicating whether the insoluble components precipitate or aggregate when the liquid adhesive is cured. From this perspective, the haze of the liquid adhesive is preferably about 1000 NTU or less, and more preferably about 500 NTU or less. The turbidity of the liquid adhesive is determined by using the table top turbidity Meter 2100N (Hach), where the unit is set to NTU, the measurement range is automated, the signal averaging is on, and the ratio processing is on; and the marking line for adding liquid adhesive to the sample well; setting the sample well at on a benchtop turbidimeter; and read the value within 20 seconds of setting after the value has stabilized.

該液體黏著劑設置在兩個基材(諸如半導體晶圓及光學透明支撐件)之間以與該等基材接觸,且可藉由加熱或用輻射(諸如紫外光)及電子束輻照來固化。因此,該兩個基材可經由液體黏著劑之固化產物接合。施加、加熱及用輻射輻照液體黏著劑可藉由已知方法來執行。 The liquid adhesive is disposed between two substrates, such as a semiconductor wafer and an optically transparent support, in contact with the substrates, and can be applied by heating or by irradiation with radiation (such as ultraviolet light) and electron beams cured. Thus, the two substrates can be joined via the cured product of the liquid adhesive. Applying, heating and irradiating the liquid adhesive with radiation can be performed by known methods.

該液體黏著劑之固化產物於150℃至220℃的儲存模數係15MPa至35Mpa。液體黏著劑之固化產物於150℃至220℃的儲存模數在上述範圍中,指示至少在該溫度範圍內,固化產物之黏彈特性係在橡膠樣平坦區域中,亦即該固化產物具有足夠的可濕性以黏附至黏附體。此外,與將液體黏著劑中之極性官能基的莫耳濃度設定為上述範圍組合,將液體黏著劑之固化產物於150℃至220℃的儲存模數設定至上述範圍,因此可確保當在熱處理之後剝離固化產物時有足夠的強度來防止該固化產物破裂,以在給予固化產物柔軟度以在高溫環境中施加黏著力(固持力)的同時確保熱處理之後的可剝離性。液體黏著劑之固化產物於150℃至220℃的儲存模數可約大於或等於16MPa、或約大於或等於17MPa,且約小於或等於26MPa、或約小於或等於24MPa。液體黏著劑之固化產物的儲存模數係藉由使用動態黏彈性測量裝置RSA3(TA Instruments Japan Inc.,Shinagawa-ku,Tokyo,Japan)在0.03%的變型、1kHz的頻率、0℃的初始溫度、250℃的最終溫度、及5℃/min的升溫速率條件下判定的。 The storage modulus of the cured product of the liquid adhesive at 150° C. to 220° C. is 15 MPa to 35 Mpa. The storage modulus of the cured product of the liquid adhesive at 150°C to 220°C is in the above range, indicating that at least in this temperature range, the viscoelastic properties of the cured product are in a rubber-like flat region, that is, the cured product has sufficient wettability to adhere to the adherend. In addition, in combination with setting the molar concentration of the polar functional group in the liquid adhesive to the above range, the storage modulus of the cured product of the liquid adhesive at 150°C to 220°C is set to the above range, so that it can be ensured when heat treatment is performed. The cured product is then peeled off with sufficient strength to prevent cracking of the cured product to ensure peelability after heat treatment while imparting flexibility to the cured product to exert adhesive force (holding force) in a high temperature environment. The storage modulus of the cured product of the liquid adhesive at 150°C to 220°C may be greater than or equal to 16 MPa, or greater than or equal to 17 MPa, and less than or equal to 26 MPa, or less than or equal to 24 MPa. The storage modulus of the cured product of the liquid adhesive was determined by using a dynamic viscoelasticity measuring device RSA3 (TA Instruments Japan Inc., Shinagawa-ku, Tokyo, Japan) was judged under the conditions of a modification of 0.03%, a frequency of 1 kHz, an initial temperature of 0°C, a final temperature of 250°C, and a heating rate of 5°C/min.

在一實施例中,當呈10mm×50mm×0.2mm之條形狀的固化產物在空氣中於300℃加熱30分鐘時,液體黏著劑之固化產物的質量損失係約小於或等於9%、約小於或等於8%、或約小於或等於7%。質量損失係由以下方程式定義: In one embodiment, when the cured product in the shape of a strip of 10mm×50mm×0.2mm is heated in air at 300°C for 30 minutes, the mass loss of the cured product of the liquid adhesive is about less than or equal to 9%, about less than or equal to 8%, or about less than or equal to 7%. Mass loss is defined by the following equation:

質量損失(%)=(條的初始質量(g)-條在熱處理之後的質量(g))/條的初始質量(g) Mass loss (%) = (Initial mass of strip (g) - Mass of strip after heat treatment (g))/Initial mass of strip (g)

一實施例提供了一種層壓體,該層壓體包括:基材;接合層,該接合層與該基材接觸並包含液體黏著劑之固化產物;光熱轉換層,該光熱轉換層包含光吸收劑及熱可分解樹脂;以及光學透明支撐件。光熱轉換層係藉由用輻射能(諸如雷射光)輻照而分解,且使得能夠自光學透明支撐件分離而不損壞基材。 An embodiment provides a laminate comprising: a substrate; a bonding layer, the bonding layer being in contact with the substrate and comprising a cured product of a liquid adhesive; and a light-to-heat conversion layer comprising a light-absorbing layer agent and thermally decomposable resin; and an optically transparent support. The light-to-heat conversion layer is decomposed by irradiation with radiant energy, such as laser light, and enables separation from the optically transparent support without damaging the substrate.

圖1繪示此實施例之層壓體的示意橫截面圖。在圖1中,層壓體1依序地包括基材2、接合層3、光熱轉換層4、及光學透明支撐件5。 Figure 1 shows a schematic cross-sectional view of the laminate of this embodiment. In FIG. 1 , the laminate 1 includes a substrate 2 , a bonding layer 3 , a light-to-heat conversion layer 4 , and an optically transparent support 5 in this order.

該基材的實例包括包含第III族至第V族化合物半導體諸如矽(Si)、鍺(Ge)、矽鍺(SiGe)、碳化矽(SiC)、及砷化鎵(GaAs)的基材;或者包含第II族至第VI族化合物半導體諸如硫化鋅(ZnS)的基材。該基材可呈半導體晶圓之形狀,且可以在與接合 層接觸之表面中形成結構,諸如電路圖案。在一實施例中,該基板係意欲藉由在層壓體之狀態下進行背側研磨來薄化。 Examples of the substrate include substrates comprising Group III to Group V compound semiconductors such as silicon (Si), germanium (Ge), silicon germanium (SiGe), silicon carbide (SiC), and gallium arsenide (GaAs); Or a substrate comprising a Group II to Group VI compound semiconductor such as zinc sulfide (ZnS). The substrate can be in the shape of a semiconductor wafer and can be bonded to Structures, such as circuit patterns, are formed in the surfaces where the layers contact. In one embodiment, the substrate is intended to be thinned by backside grinding in the state of the laminate.

接合層係設置為與基材接觸,包含液體黏著劑之固化產物,且係用於經由光熱轉換層將基材與光學透明支撐件緊固在一起。在基材及光學透明支撐件因光熱轉換層之分解而分開之後,獲得了接合層所附接至的基材。因此,期望的是可容易地將接合層從基材剝離。接合層具有足夠的黏著力(固持力)以將基材與光學透明支撐件緊固在一起,但是期望的是接合層具有低黏著力至該接合層可在熱處理之後剝離的程度。滿足上述要求的接合層可藉由使用包含液體黏著劑之固化產物的接合層來獲得。 The bonding layer is arranged in contact with the substrate, contains the cured product of the liquid adhesive, and is used to fasten the substrate and the optically transparent support together via the light-to-heat conversion layer. After the substrate and the optically transparent support are separated due to the decomposition of the light-to-heat conversion layer, the substrate to which the bonding layer is attached is obtained. Therefore, it is desirable that the bonding layer can be easily peeled off from the substrate. The tie layer has sufficient adhesion (holding force) to secure the substrate and optically clear support together, but desirably the tie layer has low adhesion to the extent that the tie layer can be peeled off after heat treatment. A bonding layer satisfying the above requirements can be obtained by using a bonding layer containing a cured product of a liquid adhesive.

接合層之厚度較佳係設定為使基材表面之不均勻性被吸收的程度,且至確保步驟(諸如背側研磨)所需之厚度均勻性及剝離該接合層所需之撕裂強度的程度。在一實施例中,接合層之厚度係約大於或等於10μm、或約大於或等於25μm,且約小於或等於150μm、或約小於或等於100μm。 The thickness of the tie layer is preferably set to such an extent that non-uniformities in the substrate surface are absorbed, and to ensure the thickness uniformity required for steps (such as backside grinding) and the tear strength required to peel the tie layer. degree. In one embodiment, the thickness of the bonding layer is about 10 μm or more, or about 25 μm or more, and about 150 μm or less, or about 100 μm or less.

光熱轉換層包含光吸收劑及熱可分解樹脂。用雷射光或類似者的形式輻照光熱轉換層所用的輻射能係由光吸收劑吸收並轉換成熱能。所產生的熱能使光熱轉換層的溫度迅速上升,且當該溫度達到光熱轉換層中的熱可分解樹脂的熱分解溫度時,該樹脂被熱分解。由熱分解所產生的氣體在光熱轉換層中形成空隙層,將光熱轉換層分離成兩個,且將基材與光學透明支撐件分離。 The light-to-heat conversion layer contains a light absorber and a thermally decomposable resin. The radiant energy used to irradiate the light-to-heat conversion layer in the form of laser light or the like is absorbed by the light absorber and converted into heat energy. The generated thermal energy rapidly increases the temperature of the photothermal conversion layer, and when the temperature reaches the thermal decomposition temperature of the thermally decomposable resin in the photothermal conversion layer, the resin is thermally decomposed. The gas generated by thermal decomposition forms a void layer in the light-to-heat conversion layer, separates the light-to-heat conversion layer into two, and separates the substrate from the optically transparent support.

該光吸收劑吸收所使用波長之輻射能。作為輻射能,可使用具有通常從300nm至2000nm,較佳地從300nm至1100nm之波長的雷射光,且輻射能的特定實例包括產生具有1064nm波長之光的YAG雷射、具有532nm波長的雙諧波YAG雷射、及具有從780nm至1300nm的波長之半導體雷射。光吸收劑之實例包括微粒金屬粉末,諸如碳黑、石墨粉末、鐵、鋁、銅、鎳、鈷、錳、鉻、鋅、及碲;金屬氧化物粉末,諸如黑色氧化鈦;及染料或顏料,諸如芳族二胺金屬錯合物、脂族二胺金屬錯合物、芳族二硫醇金屬錯合物、巰基苯酚金屬錯合物、方酸菁(spiarylium)化合物、花青染料、次甲基染料、萘醌染料、及蔥醌染料。該光吸收劑可係包括氣相沉積金屬膜的膜之形式。該光吸收劑較佳係碳黑。碳黑可顯著降低在用輻射能輻照後將基材及光學透明支撐件分離所需的力。碳黑與選擇性吸收雷射光的波長並透射其他波長範圍的染料的組合使用可用於形成光熱轉換層,該光熱轉換層在切單步驟中選擇性地透射對準光。 The light absorber absorbs radiant energy at the wavelengths used. As the radiant energy, laser light having a wavelength generally from 300 nm to 2000 nm, preferably from 300 nm to 1100 nm can be used, and specific examples of the radiant energy include a YAG laser that generates light having a wavelength of 1064 nm, a double harmonic wave having a wavelength of 532 nm Wave YAG lasers, and semiconductor lasers with wavelengths from 780nm to 1300nm. Examples of light absorbers include particulate metal powders, such as carbon black, graphite powder, iron, aluminum, copper, nickel, cobalt, manganese, chromium, zinc, and tellurium; metal oxide powders, such as black titanium oxide; and dyes or pigments , such as aromatic diamine metal complexes, aliphatic diamine metal complexes, aromatic dithiol metal complexes, mercaptophenol metal complexes, squarylium compounds, cyanine dyes, secondary Methyl dyes, naphthoquinone dyes, and allium quinone dyes. The light absorber may be in the form of a film comprising a vapor deposited metal film. The light absorber is preferably carbon black. Carbon black can significantly reduce the force required to separate the substrate and optically transparent support after irradiation with radiant energy. The combined use of carbon black with dyes that selectively absorb wavelengths of laser light and transmit other wavelength ranges can be used to form a light-to-heat conversion layer that selectively transmits alignment light during the singulation step.

光吸收劑在光熱轉換層中的濃度根據光吸收劑的類型、粒子形態及分散程度而改變,但是在具有約5nm至500nm之粒徑的一般碳黑的情況下,濃度可係約大於或等於5體積%、約大於或等於20體積%、或約大於或等於35體積%,且約小於或等於70體積%、約小於或等於60體積%、或約小於或等於55體積%。碳黑的濃度係設定為約大於或等於5體積%,因此可加速熱可分解樹脂的分解。碳黑的濃度係設定為約小於或等於70體積%,因此 可以確保光熱轉換層之膜形成特性及與相鄰層的黏著特性。在用來形成接合層的液體黏著劑係UV可固化的並用穿過光熱轉換層的紫外光輻照的情況下,碳黑的濃度較佳係小於或等於60體積%以使光熱轉換層之紫外光透射率足以用於固化液體黏著劑。 The concentration of the light absorbing agent in the light-to-heat conversion layer varies depending on the type of the light absorbing agent, particle morphology and degree of dispersion, but in the case of general carbon black having a particle size of about 5 nm to 500 nm, the concentration may be about greater than or equal to 5 vol%, about 20 vol% or more, or about 35 vol% or more, and about 70 vol% or less, about 60 vol% or less, or about 55 vol% or less. The concentration of carbon black is set to be about 5% by volume or more, so that the decomposition of the thermally decomposable resin can be accelerated. The concentration of carbon black is set to be less than or equal to about 70% by volume, so The film-forming properties of the light-to-heat conversion layer and the adhesion properties to adjacent layers can be ensured. In the case where the liquid adhesive used to form the bonding layer is UV-curable and irradiated with ultraviolet light passing through the photothermal conversion layer, the concentration of carbon black is preferably less than or equal to 60% by volume so that the UV Light transmittance is sufficient for curing liquid adhesives.

熱可分解樹脂的實例包括纖維素酯,諸如明膠、纖維素、乙酸纖維素、及硝化纖維素、多元酚、聚乙烯縮丁醛、聚乙酸乙烯酯、聚碳酸酯、聚胺甲酸酯、聚酯、聚原酸酯、聚縮醛、聚乙烯醇、聚乙烯吡咯啶酮、偏二氯乙烯與丙烯腈的共聚物、聚(甲基)丙烯酸酯、聚氯乙烯、聚矽氧樹脂、以及包含聚胺甲酸酯單元之嵌段共聚物。另外,熱可分解樹脂可單獨使用或以二或更多者的組合使用。熱可分解樹脂的玻璃轉移溫度(Tg)所欲地大於或等於20℃,且更所欲地大於或等於100℃,以防止光熱轉換層藉由使熱可分解樹脂熱分解以形成空隙層而再次從接合分開。在光學透明支撐件係玻璃的情況下,為了增強在玻璃與光熱轉換層之間的黏著力,可使用能夠與玻璃表面的矽醇基團進行氫鍵結的具有極性基團(例如,-COOH或-OH)之熱可分解樹脂。在使用化學溶液諸如濕式蝕刻的應用中,亦可使用能夠藉由熱處理自交聯的在分子中具有官能基之熱可分解樹脂、或能夠藉由紫外光或可見光交聯之熱可分解樹脂或其前驅物,以賦予該光熱轉換層耐化學性。 Examples of thermally decomposable resins include cellulose esters such as gelatin, cellulose, cellulose acetate, and nitrocellulose, polyphenols, polyvinyl butyral, polyvinyl acetate, polycarbonate, polyurethane, Polyester, polyorthoester, polyacetal, polyvinyl alcohol, polyvinylpyrrolidone, copolymer of vinylidene chloride and acrylonitrile, poly(meth)acrylate, polyvinyl chloride, polysiloxane, and block copolymers comprising polyurethane units. In addition, the thermally decomposable resin may be used alone or in combination of two or more. The glass transition temperature (Tg) of the thermally decomposable resin is desirably greater than or equal to 20°C, and more desirably greater than or equal to 100°C, to prevent the light-to-heat conversion layer from thermally decomposing the thermally decomposable resin to form a void layer. Disengage from engagement again. In the case where the optically transparent support is glass, in order to enhance the adhesion between the glass and the light-to-heat conversion layer, a polar group (for example, -COOH) capable of hydrogen bonding with the silanol groups on the glass surface can be used or -OH) heat can decompose the resin. In applications using chemical solutions such as wet etching, thermally decomposable resins having functional groups in the molecule capable of self-crosslinking by heat treatment, or thermally decomposable resins capable of being crosslinked by ultraviolet light or visible light may also be used or its precursor to impart chemical resistance to the light-to-heat conversion layer.

光熱轉換層亦可按需要包括透明填料。透明填料作用以防止光熱轉換層藉由使該熱可分解樹脂熱分解以形成空隙層而再次從接合分開。透明填料的實例包括二氧化矽、滑石及硫酸鋇。 透明填料可增強在用輻射能輻照之後基材與光學透明支撐件之間的可剝離性,而不會阻礙UV可固化液體黏著劑的固化。 The light-to-heat conversion layer may also include transparent fillers as required. The transparent filler acts to prevent the light-to-heat conversion layer from being separated from the bond again by thermally decomposing the thermally decomposable resin to form a void layer. Examples of transparent fillers include silica, talc, and barium sulfate. The transparent filler can enhance the releasability between the substrate and the optically transparent support after irradiation with radiant energy without hindering the curing of the UV-curable liquid adhesive.

光熱轉換層亦可按需要包含其他添加劑。其他添加劑之實例包括低溫氣體發生劑,諸如光聚合起始劑、偶合劑、交聯劑、發泡劑、及昇華劑。 The light-to-heat conversion layer may also contain other additives as required. Examples of other additives include low temperature gas generating agents such as photopolymerization initiators, coupling agents, crosslinking agents, foaming agents, and subliming agents.

光熱轉換層可藉由以下方式形成:按需要混合光吸收劑、熱可分解樹脂、及溶劑以形成前驅物塗佈液體;將塗佈液體施加至光學透明支撐件上;以及乾燥。光熱轉換層亦可藉由以下方式形成:混合光吸收劑、係熱可分解樹脂之原料的單體或寡聚物、按需要的添加劑(諸如光聚合起始劑)及按需要的溶劑以形成前驅物塗佈液體;以及將該前驅物塗佈液體施加至光學透明支撐件上;乾燥;及聚合、或固化。塗佈方法之實例包括旋轉塗佈、模塗、及輥塗。 The light-to-heat conversion layer may be formed by mixing a light absorber, a thermally decomposable resin, and a solvent as necessary to form a precursor coating liquid; applying the coating liquid on the optically transparent support; and drying. The light-to-heat conversion layer can also be formed by mixing a light absorber, a monomer or oligomer that is a raw material of a thermally decomposable resin, an additive as needed (such as a photopolymerization initiator), and a solvent as needed to form and applying the precursor coating liquid to the optically transparent support; drying; and polymerizing, or curing. Examples of coating methods include spin coating, die coating, and roll coating.

光熱轉換層的厚度通常係約大於或等於0.1μm,且約小於或等於5μm。當光熱轉換層的厚度係約大於或等於0.1μm時,沒有必要過量增加光吸收劑的濃度,且因此可維持光熱轉換層之膜形成特性及黏著特性。當光熱轉換層的厚度係約小於或等於5μm時,有可能藉由使用UV可固化液體黏著劑來確保形成接合層所需的紫外光透光率。從該等視角,光熱轉換層的厚度係較佳地約0.3μm至約3μm,更佳地約0.5μm至約2.0μm。 The thickness of the light-to-heat conversion layer is generally greater than or equal to about 0.1 μm and less than or equal to about 5 μm. When the thickness of the light-to-heat conversion layer is about 0.1 μm or more, it is not necessary to excessively increase the concentration of the light absorber, and thus the film-forming properties and the adhesion properties of the light-to-heat conversion layer can be maintained. When the thickness of the light-to-heat conversion layer is about 5 μm or less, it is possible to ensure the ultraviolet light transmittance required for forming the bonding layer by using a UV-curable liquid adhesive. From these viewpoints, the thickness of the light-to-heat conversion layer is preferably about 0.3 μm to about 3 μm, more preferably about 0.5 μm to about 2.0 μm.

光學透明支撐件係由能夠透射輻射能諸如雷射光且如果必要的話用於固化液體黏著劑的輻射(例如,紫外光)的材料 形成。光學透明支撐件係所欲地將基材維持在平坦狀態且在步驟(諸如背側研磨及運輸)期間不會損傷基材的材料。光學透明支撐件的透射率係所欲地例如約大於或等於目標輻射能或輻射之50%。 The optically transparent support is made of a material capable of transmitting radiant energy such as laser light and, if necessary, radiation (eg, ultraviolet light) used to cure the liquid adhesive form. An optically clear support is a material that desirably maintains the substrate in a flat state and does not damage the substrate during steps such as backside grinding and shipping. The transmittance of the optically transparent support is desirably, eg, about greater than or equal to 50% of the target radiant energy or radiation.

所欲地,光學透明支撐件具有足夠的剛性以防止基材(例如半導體晶圓)在背側研磨的時間處翹曲。光學透明支撐件較佳地具有自1MPa至10MPa之楊氏模數及大於或等於500μm的厚度。 Desirably, the optically transparent support is sufficiently rigid to prevent warping of the substrate (eg, semiconductor wafer) during backside grinding. The optically transparent support preferably has a Young's modulus of from 1 MPa to 10 MPa and a thickness of greater than or equal to 500 μm.

光學透明支撐件的合適實例包括玻璃板及丙烯酸板。為了增強與相鄰層(諸如光熱轉換層)的黏著力,光學透明支撐件可能需要按需要用矽烷偶合劑或類似者進行表面處理。 Suitable examples of optically transparent supports include glass plates and acrylic plates. To enhance adhesion to adjacent layers, such as the light-to-heat conversion layer, the optically transparent support may need to be surface-treated with a silane coupling agent or the like as needed.

光學透明支撐件可能會暴露於高溫,此係由於在用輻射能輻照時在光熱轉換層中所產生的熱量、在背側研磨的時間處的摩擦熱、及類似者。或者,在將半導體晶片從光學透明支撐件剝離之前,可額外執行步驟諸如CMP、PVD(諸如樹脂模製、濕式蝕刻、乾式蝕刻、氣相沉積、及濺鍍)、CVD、電解電鍍、無電鍍、藉由光微影術進行圖案形成、及在矽晶圓表面中形成氧化物膜之高溫處理。可根據該等步驟選擇具有耐熱性、耐化學性、或低膨脹係數的光學透明支撐件。具有耐熱性、耐化學性、及低膨脹係數的光學透明支撐件之實例包括玻璃,諸如合成玻璃、硼矽玻璃、及藍寶石玻璃,特別是Pyrex(商品名)、Corning編號1737及編號7059(可購自Corning Incorporated)、及Tempax(可購自Schott AG)。 Optically transparent supports may be exposed to high temperatures due to heat generated in the light-to-heat conversion layer upon irradiation with radiant energy, frictional heat at the time of backside grinding, and the like. Alternatively, additional steps such as CMP, PVD (such as resin molding, wet etching, dry etching, vapor deposition, and sputtering), CVD, electrolytic plating, PVD (such as resin molding, wet etching, dry etching, vapor deposition, and sputtering), CVD, electrolytic plating, Electroplating, patterning by photolithography, and high temperature processing to form oxide films in the surface of silicon wafers. An optically transparent support with heat resistance, chemical resistance, or a low expansion coefficient can be selected according to these steps. Examples of optically transparent supports with heat resistance, chemical resistance, and low coefficient of expansion include glass such as synthetic glass, borosilicate glass, and sapphire glass, especially Pyrex (trade name), Corning No. 1737 and No. 7059 (available Available from Corning Incorporated), and Tempax (available from Schott AG).

在背側研磨步驟之後且在切單之前,作為中間步驟可以用化學溶液對半導體晶圓之表面進行化學蝕刻。執行此步驟以移除半導體晶圓之背表面中因研磨而損傷的層並增加晶圓的橫向強度。或者,作為半導體晶圓薄化步驟的最終步驟,可藉由化學蝕刻來移除半導體晶圓的數十μm的厚度。在半導體晶圓係矽(Si)單晶的情況下,通常使用包含氟化氫之混合酸作為蝕刻化學溶液。此時,在光學透明支撐件係玻璃基材(不包括藍寶石玻璃)的情況下,亦藉由化學溶液來蝕刻光學透明支撐件的末端部分。因此,在重複使用光學透明支撐件的情況下,可藉由提前在玻璃基材上提供耐酸(耐蝕刻化學溶液)保護膜來保護玻璃免於被氟化氫腐蝕。耐酸樹脂可用作保護膜。期望的是,耐酸樹脂可藉由以下方式而緊固在玻璃基材上:將耐酸樹脂溶於有機溶劑中;以溶液形式施加;以及乾燥。此外,期望的是該耐酸樹脂透射足量的具有輻射雷射波長之光,以將該玻璃基材與半導體晶圓分開。從此視角,耐酸樹脂的合適實例包括無定形聚烯烴、環烯烴共聚物、及聚氯乙烯,其等不包括在分子中鍵結的縮合體系。 After the backside grinding step and before singulation, the surface of the semiconductor wafer may be chemically etched with a chemical solution as an intermediate step. This step is performed to remove grinding-damaged layers in the back surface of the semiconductor wafer and to increase the lateral strength of the wafer. Alternatively, as a final step in the semiconductor wafer thinning step, a thickness of tens of μm of the semiconductor wafer may be removed by chemical etching. In the case of a single crystal of silicon (Si) on a semiconductor wafer, a mixed acid containing hydrogen fluoride is generally used as an etching chemical solution. At this time, in the case where the optically transparent supporter is a glass substrate (excluding sapphire glass), the end portion of the optically transparent supporter is also etched by a chemical solution. Therefore, in the case of repeated use of the optically transparent support, the glass can be protected from being corroded by hydrogen fluoride by providing an acid-resistant (etching chemical solution-resistant) protective film on the glass substrate in advance. Acid-resistant resins can be used as protective films. Desirably, the acid-resistant resin can be fastened to the glass substrate by dissolving the acid-resistant resin in an organic solvent; applying it as a solution; and drying. Furthermore, it is desirable that the acid-resistant resin transmits sufficient light having the wavelength of the radiant laser to separate the glass substrate from the semiconductor wafer. From this point of view, suitable examples of the acid-resistant resin include amorphous polyolefins, cyclic olefin copolymers, and polyvinyl chloride, which do not include a condensation system bonded in a molecule.

為了在研磨基材之後獲得厚度均勻性,期望的是光學透明支撐件的厚度係均勻的。例如,為了將矽晶圓薄化至小於或等於50μm並將聚矽氧晶圓的均勻度降低至小於或等於±10%,期望的是光學透明支撐件之厚度變化小於或等於±2μm。在重複使用光學透明支撐件的情況下,期望的是光學透明支撐件具有耐刮擦性。在重複使用光學透明支撐件的情況下,期望的是考慮輻射能的 波長來選擇光學透明支撐件的材料,以抑制由於該輻射能造成的對光學透明支撐件的損傷。例如,在使用Pyrex(商品名)玻璃作為光學透明支撐件且執行使用第三諧波YAG雷射(355nm)的輻照情況下,有可能將光學透明支撐件與半導體晶圓或半導體晶片分開,但是該光學透明支撐件可能吸收輻射能並接收熱損傷,且存在無法重複使用光學透明支撐件的情況。 In order to obtain thickness uniformity after grinding the substrate, it is desirable that the thickness of the optically transparent support be uniform. For example, in order to thin silicon wafers to less than or equal to 50 μm and to reduce the uniformity of polysilicon wafers to less than or equal to ±10%, it is desirable that the optically transparent support has a thickness variation of less than or equal to ±2 μm. In the case of repeated use of the optically transparent support, it is desirable that the optically transparent support has scratch resistance. In the case of repeated use of the optically transparent support, it is desirable to take into account the radiant energy The material of the optically transparent support is selected by wavelength to inhibit damage to the optically transparent support due to the radiant energy. For example, in the case of using Pyrex (trade name) glass as the optically transparent support and performing irradiation with a third harmonic YAG laser (355 nm), it is possible to separate the optically transparent support from the semiconductor wafer or semiconductor wafer, However, the optically transparent support may absorb radiant energy and receive thermal damage, and there are cases where the optically transparent support cannot be reused.

在基材係具有電路圖案之半導體晶圓的情況下,電路可能受輻射能(諸如穿過光學透明支撐件、光熱轉換層、及接合層且到達半導體晶圓的雷射光)損傷。為了避免此類損傷,可在形成層壓體的層中之任一層中摻入吸收輻射能波長光的染料或反射該光的顏料,或者亦可以在光熱轉換層與半導體晶圓之間提供包含此類染料或顏料的層。吸收雷射光之染料的實例包括具有接近所使用之雷射光的波長的吸收峰的染料(例如,酞花青染料及花青染料)。反射雷射光之顏料的實例包括無機白色顏料,諸如氧化鈦。 Where the substrate is a semiconductor wafer with a circuit pattern, the circuit may be damaged by radiant energy such as laser light passing through the optically transparent support, the light-to-heat conversion layer, and the bonding layer and reaching the semiconductor wafer. To avoid such damage, either a dye that absorbs light at wavelengths of radiant energy or a pigment that reflects the light may be incorporated into any of the layers forming the laminate, or a layer containing a Layers of such dyes or pigments. Examples of laser light absorbing dyes include dyes having absorption peaks close to the wavelength of the laser light used (eg, phthalocyanine dyes and cyanine dyes). Examples of pigments that reflect laser light include inorganic white pigments such as titanium oxide.

可例如藉由以下方法產生層壓體。首先,將光熱轉換層的前驅物塗佈液施加至光學透明支撐件上,乾燥,並用紫外光輻照以固化。接著,將液體黏著劑施加至固化的光熱轉換層之表面及基材之未研磨側的表面中的任一者或兩者。將光熱轉換層及基材經由液體黏著劑接合在一起,且加熱或用穿過光學透明支撐件的紫外光輻照以固化該液體黏著劑,且由此形成接合層。因此,可產生具有圖1中所繪示之結構的層壓體。期望的是層壓體係在真空下形成以防止層之間包括空氣。 The laminate can be produced, for example, by the following method. First, the precursor coating liquid of the light-to-heat conversion layer is applied on the optically transparent support, dried, and irradiated with ultraviolet light to cure. Next, a liquid adhesive is applied to either or both of the surface of the cured light-to-heat conversion layer and the surface of the unpolished side of the substrate. The light-to-heat conversion layer and the substrate are bonded together via a liquid adhesive, and heated or irradiated with ultraviolet light through the optically transparent support to cure the liquid adhesive, and thereby form a bonding layer. Thus, a laminate having the structure depicted in FIG. 1 can be produced. It is desirable that the lamination system is formed under vacuum to prevent the inclusion of air between the layers.

一實施例提供了一種生產半導體晶片之方法,該方法包括:在光學透明支撐件上施加光熱轉換層,該光熱轉換層包括光吸收劑及熱可分解樹脂;提供半導體晶圓,該半導體晶圓包括具有電路圖案的電路表面及與該電路表面相對之非電路表面;施加一層包括光聚合起始劑之液體黏著劑至該半導體晶圓之該電路表面及該光學透明支撐件以使該液體黏著劑之該層與該半導體晶圓之該電路表面及該光學透明支撐件接觸;藉由穿過該光學透明支撐件的紫外光輻照固化該液體黏著劑以形成接合層,並形成層壓體,該層壓體在外側之表面中包括該非電路表面;研磨該半導體晶圓之該非電路表面,直到該半導體晶圓具有所需厚度為止;從該非電路表面側將該經研磨的半導體晶圓切單,並將該經研磨的半導體晶圓切割成複數個半導體晶片;穿過該光學透明支撐件用輻射能輻照以將該光熱轉換層分解並分開成該複數個包括該接合層之半導體晶片及該光學透明支撐件;及按需要將該接合層自該等半導體晶片移除。 One embodiment provides a method of producing a semiconductor wafer, the method comprising: applying a light-to-heat conversion layer on an optically transparent support, the light-to-heat conversion layer comprising a light absorber and a thermally decomposable resin; providing a semiconductor wafer, the semiconductor wafer Including a circuit surface with a circuit pattern and a non-circuit surface opposite to the circuit surface; applying a layer of liquid adhesive including a photopolymerization initiator to the circuit surface of the semiconductor wafer and the optically transparent support to make the liquid adhere the layer of adhesive is in contact with the circuit surface of the semiconductor wafer and the optically transparent support; the liquid adhesive is cured by ultraviolet radiation through the optically transparent support to form a bonding layer and a laminate is formed , the laminate includes the non-circuit surface in the outer surface; grind the non-circuit surface of the semiconductor wafer until the semiconductor wafer has the desired thickness; cut the ground semiconductor wafer from the non-circuit surface side single, and dicing the ground semiconductor wafer into a plurality of semiconductor wafers; irradiating with radiant energy through the optically transparent support to decompose and separate the light-to-heat conversion layer into the plurality of semiconductor wafers including the bonding layer and the optically transparent support; and removing the bonding layer from the semiconductor wafers as needed.

根據此實施例產生半導體晶片之方法包括執行對光學透明支撐件上的半導體晶圓之背側研磨以及隨後切單以將半導體晶圓劃分成半導體晶片的一系列步驟。半導體晶圓係經由接合層緊固在光學透明支撐件上,且因此半導體晶圓可經受研磨而無損傷,且可經切單而不會造成剝落。設置在半導體晶片與光學透明支撐件之間的光熱轉換層係藉由使用輻射能(諸如雷射光)輻照而分解,且可自光學透明支撐件分開而不損傷半導體晶片。以此方式,根據 此實施例,有可能產生高品質的薄化半導體晶片,該半導體晶片幾乎沒有或沒有剝落缺陷。 A method of producing a semiconductor wafer according to this embodiment includes a series of steps of performing backside grinding of the semiconductor wafer on an optically transparent support and subsequent singulation to divide the semiconductor wafer into semiconductor wafers. The semiconductor wafer is fastened on the optically transparent support via the bonding layer, and thus the semiconductor wafer can be subjected to grinding without damage and can be singulated without spalling. The light-to-heat conversion layer disposed between the semiconductor wafer and the optically transparent support is decomposed by irradiation with radiant energy, such as laser light, and can be separated from the optically transparent support without damaging the semiconductor wafer. In this way, according to With this embodiment, it is possible to produce high quality thinned semiconductor wafers with few or no spalling defects.

在此實施例之產生方法中,作為形成順序地包括半導體晶圓、接合層、光熱轉換層、及光學透明支撐件且在外側表面中包括半導體晶圓之非電路表面的層壓體之步驟,可使用上述用於產生層壓體之方法的步驟。亦即,首先,將光熱轉換層的前驅物塗佈液施加至光學透明支撐件上,乾燥,並用紫外光輻照以固化。接下來,將包含光聚合起始劑之液體黏著劑施加至固化的光熱轉換層的表面及半導體晶圓之電路表面(未研磨側的表面)中的任一者或兩者。將光熱轉換層及半導體晶圓經由液體黏著劑彼此接合,且藉由使用穿過光學透明支撐件的紫外光輻照來固化液體黏著劑以形成接合層。因此,可形成層壓體。所欲地,在真空下執行層壓體的形成以防止層之間包括空氣。 In the production method of this embodiment, as a step of forming a laminate that sequentially includes a semiconductor wafer, a bonding layer, a light-to-heat conversion layer, and an optically transparent support and includes a non-circuit surface of the semiconductor wafer in the outer surface, The steps of the method described above for producing laminates can be used. That is, first, the precursor coating liquid of the light-to-heat conversion layer is applied on the optically transparent support, dried, and irradiated with ultraviolet light to be cured. Next, a liquid adhesive containing a photopolymerization initiator is applied to either or both of the surface of the cured light-to-heat conversion layer and the circuit surface (surface on the unpolished side) of the semiconductor wafer. The light-to-heat conversion layer and the semiconductor wafer are bonded to each other via a liquid adhesive, and the liquid adhesive is cured by using ultraviolet light irradiation through the optically transparent support to form a bonding layer. Thus, a laminate can be formed. Desirably, the formation of the laminate is performed under vacuum to prevent the inclusion of air between the layers.

可藉由使用研磨裝置來執行半導體晶圓之非電路表面的研磨,該研磨裝置包括能夠夾入並緊固待研磨的物體的基座、心軸、及研磨輪,該研磨輪可旋轉地附接至該心軸之下端部分。將層壓體之光學透明支撐件側安裝在研磨裝置之基座上,並用基座夾入並緊固該層壓體。隨後,藉由在將水流供應至層壓體的同時使研磨輪旋轉至與層壓體接觸來研磨半導體晶圓。可執行研磨直到半導體晶圓之厚度係約小於或等於150μm,較佳地約小於或等於50μm,更佳地約小於或等於25μm。 The grinding of the non-circuit surfaces of semiconductor wafers can be performed by using a grinding apparatus comprising a base capable of clamping and securing the object to be ground, a mandrel, and a grinding wheel rotatably attached. connected to the lower end portion of the mandrel. The optically transparent support side of the laminate was mounted on the base of the grinding device, and the laminate was clamped and fastened with the base. Subsequently, the semiconductor wafer is ground by rotating the grinding wheel into contact with the laminate while a water stream is supplied to the laminate. Grinding may be performed until the thickness of the semiconductor wafer is about 150 μm or less, preferably about 50 μm or less, and more preferably about 25 μm or less.

在將半導體晶圓研磨至具有所需厚度之後,可按需要執行步驟,諸如化學機械研磨(CMP)、物理氣相沉積(PVD)(諸如樹脂模製、濕式蝕刻、乾式蝕刻、氣相沉積、及濺鍍)、化學氣相沉積(CVD)、電鍍、無電鍍、藉由光微影術進行圖案形成、在矽晶圓表面中形成氧化物膜。隨後,從非電路表面側對經研磨的半導體晶圓進行切單並將其切割成複數個半導體晶片。由於經研磨的層壓體之半導體晶圓的電路表面處於接合層側中,所以無法直接從外部觀察到電路表面中的切割線(待切割線)。因此,期望的是切單裝置具有使得能夠觀察內側之電路表面的功能(例如,包括電荷耦合裝置(charge-coupled device,CCD)之圖像辨識裝置與發射紅外光、可見光、或紫外光的光源之組合)。在晶粒接合膠帶附接至經研磨的半導體晶圓後,可執行切單以形成具有晶粒接合膠帶的半導體晶片。 After grinding the semiconductor wafer to the desired thickness, steps such as chemical mechanical polishing (CMP), physical vapor deposition (PVD) (such as resin molding, wet etching, dry etching, vapor deposition) may be performed as desired , and sputtering), chemical vapor deposition (CVD), electroplating, electroless plating, patterning by photolithography, forming oxide films in the surface of silicon wafers. Subsequently, the polished semiconductor wafer is singulated from the non-circuit surface side and cut into a plurality of semiconductor wafers. Since the circuit surface of the semiconductor wafer of the ground laminate is in the bonding layer side, the dicing lines (lines to be diced) in the circuit surface cannot be directly observed from the outside. Therefore, it is desirable for the singulation device to have a function that enables observation of the circuit surface on the inside (eg, an image recognition device including a charge-coupled device (CCD) and a light source emitting infrared, visible, or ultraviolet light) combination). After the die bond tape is attached to the ground semiconductor wafer, singulation may be performed to form a semiconductor wafer with the die bond tape.

在切單之後,執行穿過光學透明支撐件以輻射能輻照以將光熱轉換層分解並分開成具有接合層之半導體晶片及光學透明支撐件。例如,黏著膠帶係設置於包括複數個半導體晶片之層壓體的該等半導體晶片側。通常在平面中用環形金屬框架緊固黏著劑膠帶。接下來,從層壓體之光學透明支撐件側執行以例如雷射光作為輻射能的輻照。在以雷射光輻照之後,將光學透明支撐件拉起以將光學透明支撐件與半導體晶片分開。黏著劑膠帶具有足以在移除接合層時緊固個別半導體晶片,但使得在移除接合層後容易剝離黏著膠帶之黏著強度。 After singulation, irradiation with radiant energy through the optically transparent support is performed to decompose and separate the light-to-heat conversion layer into a semiconductor wafer with a bonding layer and an optically transparent support. For example, an adhesive tape is provided on the semiconductor wafer side of a laminate including a plurality of semiconductor wafers. The adhesive tape is usually fastened in a flat with a ring-shaped metal frame. Next, irradiation with, for example, laser light as radiant energy is performed from the optically transparent support side of the laminate. After being irradiated with laser light, the optically transparent support is pulled up to separate the optically transparent support from the semiconductor wafer. The adhesive tape has sufficient adhesive strength to secure the individual semiconductor chips when the bonding layer is removed, but allows easy peeling of the adhesive tape after the bonding layer is removed.

可在用緊固基部夾入及緊固層壓體,使得光學透明支撐件係上表面的狀態下執行使用雷射光輻照。選擇雷射光源,該雷射光源具有足以在由光熱轉換層吸收之光的波長下分解光熱轉換層之熱可分解樹脂以產生分解氣體並將光學透明支撐件與半導體晶片分開的輸出。雷射光的實例包括YAG雷射(波長1064nm)、雙諧波YAG雷射(波長532nm)、及半導體雷射(從780nm至1300nm的波長)。雷射光的聚焦深度所欲地深達約大於或等於30μm,以穩定地將半導體晶片與光學透明支撐件分開。雷射輸出可係0.3W至100W,掃描速度可係0.1m/sec至40m/sec,且射束直徑可係5μm至300μm。可藉由增加雷射輸出及增加掃描速度來增加處理速度。在雷射輸出有邊限的情況下,可藉由增加射束直徑及減少掃描次數來增加處理速度。雷射光掃描所欲地係自層壓體之末端部分執行,且沒有任何間隙。例如,雷射光掃描可從末端部分在半導體晶圓(切單的複數個半導體晶片)之切線方向上往復地線性執行,或者可以從末端部分朝向中心螺旋地執行。 Irradiation with laser light may be performed in a state in which the laminate is sandwiched and fastened with the fastening base so that the optically transparent support is tied to the upper surface. A laser light source is selected that has an output sufficient to decompose the thermally decomposable resin of the photothermal conversion layer at the wavelength of light absorbed by the photothermal conversion layer to generate decomposed gas and separate the optically transparent support from the semiconductor wafer. Examples of laser light include YAG laser (wavelength 1064 nm), double harmonic YAG laser (wavelength 532 nm), and semiconductor laser (wavelength from 780 nm to 1300 nm). The depth of focus of the laser light is desirably as deep as about greater than or equal to 30 μm to stably separate the semiconductor wafer from the optically transparent support. The laser output can be 0.3W to 100W, the scanning speed can be 0.1m/sec to 40m/sec, and the beam diameter can be 5μm to 300μm. The processing speed can be increased by increasing the laser output and increasing the scanning speed. In the case of limited laser output, the processing speed can be increased by increasing the beam diameter and reducing the number of scans. Laser light scanning is performed desirably from the end portion of the laminate without any gaps. For example, the laser light scanning may be performed linearly reciprocally in the tangential direction of the semiconductor wafer (single plural semiconductor wafers) from the end portion, or may be performed spirally from the end portion toward the center.

在使用雷射光輻照之後,藉由使用真空撿拾器(vacuum pickup)或類似者將光學透明支撐件與半導體晶片分開。 After irradiation with laser light, the optically transparent support is separated from the semiconductor wafer by using a vacuum pickup or the like.

在將光學透明支撐件與半導體晶片分開後,必要時從半導體晶片移除接合層。為了移除接合層,可使用用於移除接合層之黏著劑膠帶,該黏著劑膠帶可形成與接合層的黏著力,該黏著力高於半導體晶片與接合層之間的黏著力。用於移除接合層之黏著膠帶可接合在接合層上,以將接合層自半導體晶片剝離。以此方 式,可獲得附接至黏著劑膠帶上之複數個半導體晶片。隨後,可將個別半導體晶片一個接一個地自黏著膠帶撿拾,並在下一個步驟(諸如引線接合及封裝)處使用。 After separating the optically transparent support from the semiconductor wafer, the bonding layer is removed from the semiconductor wafer if necessary. In order to remove the bonding layer, an adhesive tape for removing the bonding layer can be used, which can form an adhesive force with the bonding layer which is higher than the adhesion force between the semiconductor chip and the bonding layer. An adhesive tape for removing the bonding layer can be bonded on the bonding layer to peel the bonding layer from the semiconductor wafer. in this way formula, a plurality of semiconductor wafers attached to the adhesive tape can be obtained. Subsequently, the individual semiconductor wafers can be picked up one by one with the self-adhesive tape and used at the next steps such as wire bonding and packaging.

本揭露之液體黏著劑可用於各種應用,包括暫時緊固應用。液體黏著劑可合適地用於緊固具有支撐件的晶圓(具體而言,以高密度安裝的層壓晶片尺寸封裝(laminated chip size package,CSP))、需要高功能性及高速度之穿透型CSP、需要改善的散熱效率、電氣特性及穩定性的超薄化合物半導體(例如,GaAs)、包括大晶圓(例如16吋矽晶圓)的半導體晶片、及超薄晶體晶圓的應用中。 The liquid adhesives of the present disclosure can be used in a variety of applications, including temporary fastening applications. Liquid adhesives are suitable for securing wafers with supports (specifically, laminated chip size packages (CSPs) mounted at high density), threading requiring high functionality and high speed. Transmissive CSPs, ultra-thin compound semiconductors (eg, GaAs) requiring improved heat dissipation efficiency, electrical properties, and stability, semiconductor wafers including large wafers (eg, 16-inch silicon wafers), and ultra-thin crystal wafer applications middle.

實例 Example

在以下實例中,將例示本揭露之特定實例,但本發明並不限於該等實施例。除非另有指明,否則所有部分及百分率係基於質量。數值基本上包括來源於測量原理及測量裝置的誤差。數值通常以正常捨入的有效位數表示。 In the following examples, specific examples of the present disclosure will be illustrated, but the present invention is not limited to these examples. All parts and percentages are based on mass unless otherwise indicated. The values basically include errors derived from the measuring principle and the measuring device. Numerical values are usually expressed in normal rounded significands.

表1指示本實例中所用之試劑、材料、及類似者。 Table 1 indicates the reagents, materials, and the like used in this example.

Figure 110134881-A0202-12-0041-29
Figure 110134881-A0202-12-0041-29

PEAM-1769之結構式表示如下。在該結構式中,n係1至5。 The structural formula of PEAM-1769 is shown below. In this structural formula, n is 1 to 5.

Figure 110134881-A0202-12-0042-35
Figure 110134881-A0202-12-0042-35

實例1至6及比較例2至11 Examples 1 to 6 and Comparative Examples 2 to 11

將單體(多官能(甲基)丙烯酸化合物及雙官能單體)及光聚合起始劑置於光屏蔽塑膠瓶中,並攪拌直到光聚合起始劑完全溶解。接著,將寡聚物或聚合物(式(1)之酯化合物及其他(甲基)丙烯酸酯寡聚物/聚合物)添加至瓶中並攪拌。在寡聚物或聚合物中,將在室溫下不流動的寡聚物或聚合物預熱至60℃,然後混合以獲得液體黏著劑。表2指示實例1至6及比較例2至11之液體黏著劑之組成。 The monomers (polyfunctional (meth)acrylic compound and bifunctional monomer) and the photopolymerization initiator were placed in a light-shielding plastic bottle, and stirred until the photopolymerization initiator was completely dissolved. Next, oligomers or polymers (ester compounds of formula (1) and other (meth)acrylate oligomers/polymers) are added to the bottle and stirred. In oligomers or polymers, oligomers or polymers that do not flow at room temperature are preheated to 60°C and then mixed to obtain a liquid adhesive. Table 2 indicates the composition of the liquid adhesives of Examples 1 to 6 and Comparative Examples 2 to 11.

比較例1 Comparative Example 1

將LC-5320F00(3M Japan Ltd.,(Shinagawa-ku,Tokyo,Japan))用作比較例1的液體黏著劑。 LC-5320F00 (3M Japan Ltd., (Shinagawa-ku, Tokyo, Japan)) was used as the liquid adhesive of Comparative Example 1.

黏彈特性 Viscoelastic properties

藉由以下工序產生用於測量黏彈特性的樣本。藉由旋轉塗佈或刮刀塗佈(僅比較例8)形成厚度為50μm至100μm之膜。藉由穿過塗佈有透射率為10%的光熱轉換層之玻璃基材用紫外光輻照膜30秒來固化該膜。使用UVA和UVV的輻照的量分別係3000mJ/cm2及4000mJ/cm2Samples for measuring viscoelastic properties were produced by the following procedure. Films with a thickness of 50 μm to 100 μm were formed by spin coating or knife coating (Comparative Example 8 only). The film was cured by irradiating the film with ultraviolet light for 30 seconds through a glass substrate coated with a light-to-heat conversion layer having a transmittance of 10%. The amounts of irradiation with UVA and UVV were 3000 mJ/cm 2 and 4000 mJ/cm 2 , respectively.

固化膜之儲存模數係藉由使用動態黏彈性測量裝置RSA3(TA Instruments Japan Inc.,(Shinagawa-ku,Tokyo,Japan))在0.03%的變型、1kHz的頻率、0℃的初始溫度、250℃的最終溫度、及5℃/min的升溫速率條件下測量的,且獲得了於150℃、200℃、及220℃之儲存彈性模數。 The storage modulus of the cured film was determined by using a dynamic viscoelasticity measuring device RSA3 (TA Instruments Japan Inc., (Shinagawa-ku, Tokyo, Japan)) at a modification of 0.03%, a frequency of 1 kHz, an initial temperature of 0° C., 250 Measured under the conditions of a final temperature of °C, and a heating rate of 5 °C/min, and obtained storage elastic moduli at 150 °C, 200 °C, and 220 °C.

黏度 viscosity

液體黏著劑之黏度係藉由以下方式測量:在25℃之溫度、35mm之錐體直徑、1度之錐角、及1度/分鐘之轉速的條件下使用錐板型黏度計(HAAKE(商品名)Leometer,Thermo Fisher Scientific K.K.(Minato-ku,Tokyo)),將液體黏著劑設定在錐體與板之間並等待60秒,隨後在測量開始後30秒內讀取值。 The viscosity of the liquid adhesive was measured by using a cone-plate viscometer (HAAKE (commercial product) under the conditions of a temperature of 25°C, a cone diameter of 35mm, a cone angle of 1 degree, and a rotation speed of 1 degree/min. Name) Leometer, Thermo Fisher Scientific K.K. (Minato-ku, Tokyo)), set the liquid adhesive between the cone and the plate and wait 60 seconds, then read the value within 30 seconds after the start of the measurement.

剝離(分層)測試 Peel (delamination) test

藉由以下工序產生用於剝離(分層)測試之樣本。將約0.4g液體黏著劑分配至浮法玻璃板(80mm×50mm×1mm) 之中心。接著,小心地將另一浮法玻璃板置於液體黏著劑上,留心不要在非浮法玻璃板之間捕獲氣泡。隨後,液體黏著劑開始以圓圈擴散。將所獲得之層壓體置於UV-LED下。當液體黏著劑的直徑達到50mm時,用紫外光輻照層壓體20秒。使用UVA、UVB、UVC、及UVV輻照的量分別係22351mJ/cm2、841mJ/cm2、87mJ/cm2、及2198mJ/cm2。液體黏著劑形成了夾在兩個浮法玻璃板之間的厚度為約200μm的包含固化產物的接合層。 Samples for peel (delamination) testing were produced by the following procedure. About 0.4 g of liquid adhesive was dispensed into the center of a float glass plate (80 mm x 50 mm x 1 mm). Next, carefully place another float glass plate on top of the liquid adhesive, taking care not to trap air bubbles between the non-float glass plates. Subsequently, the liquid adhesive began to spread in circles. The obtained laminate was placed under UV-LED. When the diameter of the liquid adhesive reached 50 mm, the laminate was irradiated with ultraviolet light for 20 seconds. The amounts of irradiation with UVA, UVB, UVC, and UVV were 22351 mJ/cm 2 , 841 mJ/cm 2 , 87 mJ/cm 2 , and 2198 mJ/cm 2 , respectively. The liquid adhesive formed an approximately 200 μm thick bonding layer comprising the cured product sandwiched between two float glass sheets.

將熱板加熱至200℃。將層壓體放置在熱板上並在測試期間詳細觀察。將層壓體保持在熱板上5分鐘。將接合層與浮法玻璃板之間未觀察到剝離的樣本評估為OK,並將發生剝離的樣本評估為NG。 Heat the hot plate to 200°C. The laminates were placed on a hot plate and observed in detail during the test. The laminate was kept on the hot plate for 5 minutes. A sample in which peeling was not observed between the bonding layer and the float glass plate was evaluated as OK, and a sample in which peeling occurred was evaluated as NG.

剝離強度之測量 Measurement of peel strength

藉由以下工序生產用於測量剝離強度的樣本。將PET膜(初始剝離強度)或鋁箔(熱處理之後的剝離強度)放置在真空夾頭上作為襯墊。將兩股尼龍紗線(直徑74μm)並行置於襯墊上間隔開45mm以作為間隔物。將約0.4g液體黏著劑滴落到兩個間隔物之間的襯墊上。接著,小心地將浮法玻璃板置於液體黏著劑上,留心不要在浮法玻璃板與襯墊之間捕獲氣泡。在液體黏著劑足夠濕且展開之後,將層壓體移至UV室中並用紫外光輻照30秒。輻照量係3000mJ/cm2。液體黏著劑形成了夾在襯墊與浮法玻璃板之間的包含固化產物的接合層。 Samples for measuring peel strength were produced by the following procedure. A PET film (initial peel strength) or aluminum foil (peel strength after heat treatment) was placed on a vacuum chuck as a liner. Two strands of nylon yarn (74 μm in diameter) were placed side by side on the pad spaced 45 mm apart to serve as spacers. About 0.4 g of liquid adhesive was dropped onto the liner between the two spacers. Next, carefully place the float glass plate on the liquid adhesive, taking care not to trap air bubbles between the float glass plate and the liner. After the liquid adhesive was sufficiently wet and spread, the laminate was moved to a UV chamber and irradiated with UV light for 30 seconds. The irradiation dose was 3000 mJ/cm 2 . The liquid adhesive forms a bonding layer containing the cured product sandwiched between the liner and the float glass sheet.

(A)初始剝離強度 (A) Initial peel strength

藉由在接合層覆蓋有襯墊(PET膜)的狀態下使用剃刀片來將接合層在浮法玻璃板上分切成10mm的寬度。接著,使用數位測力計(ZTS-20N,Imada Co.,Ltd.,(Toyohashi-shi,Aichi,Japan))來測量介於浮法玻璃板與接合層之間的180度剝離強度。 The bonding layer was cut into a width of 10 mm on a float glass plate by using a razor blade in a state where the bonding layer was covered with a liner (PET film). Next, the 180-degree peel strength between the float glass plate and the bonding layer was measured using a digital dynamometer (ZTS-20N, Imada Co., Ltd., (Toyohashi-shi, Aichi, Japan)).

(B)熱處理後之剝離強度 (B) Peel strength after heat treatment

將層壓體放置在預熱至200℃的烘箱中並保持30分鐘。接著,將層壓體取出並放置在室溫氣氛中5分鐘至10分鐘。藉由在接合層覆蓋有襯墊(鋁箔)的狀態下使用剃刀片來將接合層在浮法玻璃板上分切成10mm的寬度。接下來,移除鋁箔。隨後,使用數位測力計(ZTS-20N,Imada Co.,Ltd.,(Toyohashi-shi,Aichi,Japan))來測量介於浮法玻璃板與接合層之間的180度剝離強度。 The laminate was placed in an oven preheated to 200°C for 30 minutes. Next, the laminate is taken out and placed in a room temperature atmosphere for 5 minutes to 10 minutes. The bonding layer was cut to a width of 10 mm on a float glass plate by using a razor blade in a state where the bonding layer was covered with a liner (aluminum foil). Next, remove the aluminum foil. Subsequently, the 180-degree peel strength between the float glass plate and the bonding layer was measured using a digital dynamometer (ZTS-20N, Imada Co., Ltd., (Toyohashi-shi, Aichi, Japan)).

質量損失(熱穩定性之評估) Mass loss (assessment of thermal stability)

將液體黏著劑之固化產物切割成10mm×50mm×0.2mm的條。測量條的質量。接著,將該條放置於預熱至300℃的馬弗爐(muffle furnace)中並保持30分鐘。將該條從馬弗爐取出並在室溫氣氛中冷卻。隨後,測量條的質量。藉由以下方程式計算液體黏著劑之固化產物的質量損失。 The cured product of the liquid adhesive was cut into strips of 10 mm x 50 mm x 0.2 mm. Measure the quality of the bars. Next, the strip was placed in a muffle furnace preheated to 300°C and held for 30 minutes. The strip was removed from the muffle furnace and cooled in a room temperature atmosphere. Subsequently, the mass of the strip is measured. The mass loss of the cured product of the liquid adhesive was calculated by the following equation.

質量損失(%)=(條的初始質量(g)-條在熱處理之後的質量(g))/條的初始質量(g) Mass loss (%) = (Initial mass of strip (g) - Mass of strip after heat treatment (g))/Initial mass of strip (g)

表2指示液體黏著劑之特性及評估結果。需注意,所有實例及比較實例之液體黏著劑不包含聚矽氧化合物。由於在接合層的一部分中觀察到了剝離,所以比較例4之剝離測試結果係描述為「(NG)」。在表2中,「N/A」意指無法進行評估。 Table 2 indicates the properties and evaluation results of the liquid adhesive. Note that the liquid adhesives of all Examples and Comparative Examples do not contain polysiloxanes. Since peeling was observed in a part of the bonding layer, the peeling test result of Comparative Example 4 is described as "(NG)". In Table 2, "N/A" means that the evaluation could not be performed.

Figure 110134881-A0202-12-0046-30
Figure 110134881-A0202-12-0046-30

Figure 110134881-A0202-12-0047-31
Figure 110134881-A0202-12-0047-31

Figure 110134881-A0202-12-0047-32
Figure 110134881-A0202-12-0047-32

對於所屬技術領域中具有通常知識者而言顯而易見的是,在不偏離本發明之範疇及精神的情況下,可對本發明作出各種修改及變化。 It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the scope and spirit of the invention.

Figure 110134881-A0202-11-0003-3
Figure 110134881-A0202-11-0003-3

1:層壓體 1: Laminate

2:基材 2: Substrate

3:接合層 3: Bonding layer

4:光熱轉換層 4: Light-to-heat conversion layer

5:光學透明支撐件 5: Optically transparent support

Claims (12)

一種液體黏著劑,其包含60質量%或更多的至少一種由式(1)表示的酯化合物: A liquid adhesive comprising 60% by mass or more of at least one ester compound represented by formula (1):
Figure 110134881-A0202-13-0001-33
Figure 110134881-A0202-13-0001-33
其中 in R獨立地係包括經取代或未經取代之脂環基之二價基團, R is independently a divalent group including a substituted or unsubstituted alicyclic group, Q獨立地係選自由以下所組成之群組的二價基團:經取代或未經取代之二價脂族基團、經取代或未經取代之二價芳族基團、經取代或未經取代之二價雜芳基、及其二或更多者之組合, Q is independently a divalent group selected from the group consisting of a substituted or unsubstituted divalent aliphatic group, a substituted or unsubstituted divalent aromatic group, a substituted or unsubstituted divalent aromatic group substituted divalent heteroaryl, and combinations of two or more thereof, E獨立地係選自由以下所組成之群組的自由基可聚合基團:丙烯醯氧基及甲基丙烯醯氧基,且 E is independently a free radical polymerizable group selected from the group consisting of acryloxy and methacryloyloxy, and n係1至10之整數, n is an integer from 1 to 10, 其中 in 該液體黏著劑中之極性官能基的總莫耳濃度係1×10-6mol/g至1.5×10-5mol/g, The total molar concentration of polar functional groups in the liquid adhesive is 1×10 -6 mol/g to 1.5×10 -5 mol/g, 該極性官能基係-OH、-COOH、由式(2)表示的基團: The polar functional groups are -OH, -COOH, groups represented by formula (2): [化學式2]
Figure 110134881-A0202-13-0002-34
[Chemical formula 2]
Figure 110134881-A0202-13-0002-34
-Si(OR2)3-n(OH)n,其中R2係有機基團且n係1至3之整數;-P(O)(OR2)2-n(OH)n,其中R2係有機基團且n係1至2之整數;-OP(O)(OR2)2-n(OH)n,其中R2係有機基團且n係1至2之整數;-SH、環氧基、或-NH2,且 -Si(OR 2 ) 3-n (OH) n , wherein R 2 is an organic group and n is an integer from 1 to 3; -P(O)(OR 2 ) 2-n (OH) n , wherein R 2 is an organic group and n is an integer of 1 to 2; -OP(O)(OR 2 ) 2-n (OH) n , wherein R 2 is an organic group and n is an integer of 1 to 2; -SH, ring oxy, or -NH 2 , and 該液體黏著劑之固化產物於150℃至220℃的儲存模數係15MPa至35MPa。 The storage modulus of the cured product of the liquid adhesive at 150° C. to 220° C. is 15 MPa to 35 MPa.
如請求項1之液體黏著劑,其中該液體黏著劑在25℃之黏度係100mPa.s至10000mPa.s。 Such as the liquid adhesive of claim 1, wherein the viscosity of the liquid adhesive at 25 ℃ is 100mPa. s to 10000mPa. s. 如請求項1之液體黏著劑,其中該液體黏著劑包含聚合起始劑。 The liquid adhesive of claim 1, wherein the liquid adhesive comprises a polymerization initiator. 如請求項3之液體黏著劑,其中該聚合起始劑係光聚合起始劑。 The liquid adhesive of claim 3, wherein the polymerization initiator is a photopolymerization initiator. 如請求項1之液體黏著劑,其中該液體黏著劑實質上不包括選自由聚矽氧化合物及氟化合物所組成之群組的低表面能化合物。 The liquid adhesive of claim 1, wherein the liquid adhesive does not substantially include low surface energy compounds selected from the group consisting of polysiloxanes and fluorine compounds. 如請求項1之液體黏著劑,其中該液體黏著劑之濁度小於或等 於1500NTU。 The liquid adhesive of claim 1, wherein the turbidity of the liquid adhesive is less than or equal to at 1500NTU. 如請求項1之液體黏著劑,其中該酯化合物不包括醚鍵。 The liquid adhesive of claim 1, wherein the ester compound does not include an ether bond. 如請求項1之液體黏著劑,其中Q係經取代或未經取代之二價脂族基團,該經取代或未經取代之二價脂族基團包括經取代或未經取代之脂環基。 The liquid adhesive of claim 1, wherein Q is a substituted or unsubstituted divalent aliphatic group, and the substituted or unsubstituted divalent aliphatic group includes a substituted or unsubstituted alicyclic group base. 如請求項1之液體黏著劑,其進一步包含具有極性官能基之多官能(甲基)丙烯酸化合物。 The liquid adhesive of claim 1, further comprising a polyfunctional (meth)acrylic compound having a polar functional group. 一種層壓體,其包含: A laminate comprising: 基材; substrate; 接合層,其與該基材接觸並包括如請求項1之液體黏著劑的固化產物; A bonding layer, which is in contact with the substrate and includes a cured product of the liquid adhesive as claimed in claim 1; 光熱轉換層,其包括光吸收劑及熱可分解樹脂;及 a light-to-heat conversion layer comprising a light absorber and a thermally decomposable resin; and 光學透明支撐件。 Optically transparent support. 如請求項10之層壓體,其中該基材包括矽(Si)、鍺(Ge)、矽鍺(SiGe)、碳化矽(SiC)、第III族至第V族化合物半導體、或第II族至第VI族化合物半導體。 The laminate of claim 10, wherein the substrate comprises silicon (Si), germanium (Ge), silicon germanium (SiGe), silicon carbide (SiC), Group III to Group V compound semiconductors, or Group II to Group VI compound semiconductors. 一種生產半導體晶片之方法,該方法包括: A method of producing a semiconductor wafer, the method comprising: 在光學透明支撐件上施加光熱轉換層,該光熱轉換層包括 光吸收劑及熱可分解樹脂; A light-to-heat conversion layer is applied on the optically transparent support, the light-to-heat conversion layer comprising Light absorbers and thermally decomposable resins; 提供半導體晶圓,該半導體晶圓包括具有電路圖案的電路表面及與該電路表面相對之非電路表面; providing a semiconductor wafer comprising a circuit surface having a circuit pattern and a non-circuit surface opposite the circuit surface; 施加一層如請求項4至9中任一項之液體黏著劑至該半導體晶圓之該電路表面及該光學透明支撐件以使該液體黏著劑之該層與該半導體晶圓之該電路表面及該光學透明支撐件接觸, Applying a layer of the liquid adhesive of any one of claims 4 to 9 to the circuit surface of the semiconductor wafer and the optically transparent support so that the layer of the liquid adhesive and the circuit surface of the semiconductor wafer and The optically transparent support contacts, 藉由穿過該光學透明支撐件的紫外光輻照固化該液體黏著劑以形成接合層,並形成層壓體,該層壓體在外側之表面中包括該非電路表面; curing the liquid adhesive by UV irradiation through the optically transparent support to form a tie layer and form a laminate including the non-circuit surface in an outer surface; 研磨該半導體晶圓之該非電路表面,直到該半導體晶圓具有所需厚度為止; grinding the non-circuit surface of the semiconductor wafer until the semiconductor wafer has a desired thickness; 從該非電路表面側將該經研磨的半導體晶圓切單,並將該經研磨的半導體晶圓切割成複數個半導體晶片; The ground semiconductor wafer is diced from the non-circuit surface side, and the ground semiconductor wafer is diced into a plurality of semiconductor wafers; 用輻射能輻照穿過該光學透明支撐件以將該光熱轉換層分解及分開成該複數個包括該接合層之半導體晶片及該光學透明支撐件;及 irradiating through the optically transparent support with radiant energy to decompose and separate the light-to-heat conversion layer into the plurality of semiconductor wafers including the bonding layer and the optically transparent support; and 按需要將該接合層自該等半導體晶片移除。 The bonding layer is removed from the semiconductor wafers as needed.
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