TW202221804A - Packaging piece and method of forming the same - Google Patents
Packaging piece and method of forming the same Download PDFInfo
- Publication number
- TW202221804A TW202221804A TW110144184A TW110144184A TW202221804A TW 202221804 A TW202221804 A TW 202221804A TW 110144184 A TW110144184 A TW 110144184A TW 110144184 A TW110144184 A TW 110144184A TW 202221804 A TW202221804 A TW 202221804A
- Authority
- TW
- Taiwan
- Prior art keywords
- wafer
- coupler
- stack
- couplers
- layers
- Prior art date
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
- H01L23/3128—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0652—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next and on each other, i.e. mixed assemblies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0657—Stacked arrangements of devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/023—Redistribution layers [RDL] for bonding areas
- H01L2224/0233—Structure of the redistribution layers
- H01L2224/02333—Structure of the redistribution layers being a bump
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/023—Redistribution layers [RDL] for bonding areas
- H01L2224/0237—Disposition of the redistribution layers
- H01L2224/02381—Side view
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/111—Manufacture and pre-treatment of the bump connector preform
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13005—Structure
- H01L2224/13008—Bump connector integrally formed with a redistribution layer on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06513—Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06524—Electrical connections formed on device or on substrate, e.g. a deposited or grown layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06541—Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Auxiliary Devices For And Details Of Packaging Control (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
本發明涉及半導體技術領域,尤其涉及一種封裝件及其形成方法。The present invention relates to the technical field of semiconductors, and in particular, to a package and a method for forming the same.
目前,半導體積體電路所需的功能越來越多,所需的計算速度越來越快,在這種形勢下,業界已經開始在晶片堆疊技術的研發上增加投入,以探索在晶片堆疊技術中更有效的解決方案。然而,傳統的晶圓級封裝(WLP)技術無法實現晶片的堆疊。而在傳統的晶片堆疊技術中,堆疊大多是在最終組裝中完成的,並且需要利用矽片通孔(TSV,Through Silicon Via)、玻璃基板通孔(TGV,Through Glass Via)、塑封層通孔(TMV,Through Mold Via)或者引線鍵合(Wire-bond)等技術來實現堆疊晶片間的豎直聯接。傳統堆疊技術的封裝工藝較複雜並且成本較高。At present, more and more functions are required for semiconductor integrated circuits, and the required computing speed is getting faster and faster. Under this situation, the industry has begun to increase investment in the research and development of wafer stacking technology to explore the use of wafer stacking technology. more efficient solutions. However, conventional wafer-level packaging (WLP) technology cannot achieve stacking of wafers. In the traditional chip stacking technology, the stacking is mostly completed in the final assembly, and it is necessary to use through silicon vias (TSV, Through Silicon Via), glass substrate vias (TGV, Through Glass Via), plastic packaging layer through holes (TMV, Through Mold Via) or wire bonding (Wire-bond) and other technologies to achieve vertical connection between stacked wafers. The packaging process of the traditional stacking technology is complex and expensive.
本發明實施例提供一種形成封裝件的方案,該封裝件包含堆疊的多個晶片。Embodiments of the present invention provide a solution for forming a package including a plurality of stacked dies.
本發明的一個方面提出了一種形成封裝件的方法,其可以包括:在載體的上方放置多個第一晶片層,每個第一晶片層包括正面朝下的多個第一晶片和在所述多個第一晶片之間的多個晶片聯接器;在所述多個第一晶片層上放置並組裝第二晶片層,所述第二晶片層包括正面朝下的多個第二晶片;在所述載體的上方對所述多個第一晶片層和所述第二晶片層進行模塑處理;去除所述載體以形成封裝件主體,並在所述封裝件主體的下方添加重佈線層和凸點;以及分割所述封裝件主體以形成多個所述封裝件。One aspect of the present invention provides a method of forming a package, which may include: placing a plurality of first wafer layers over a carrier, each first wafer layer including a face-down plurality of first wafers and a a plurality of wafer couplers between a plurality of first wafers; placing and assembling a second wafer layer on the plurality of first wafer layers, the second wafer layer including a face-down plurality of second wafers; in molding the plurality of first wafer layers and the second wafer layers above the carrier; removing the carrier to form a package body, and adding a redistribution layer and a redistribution layer below the package body bumps; and dividing the package body to form a plurality of the packages.
多個晶片聯接器可以是有源聯接器件或無源聯接器件。The plurality of wafer connectors may be active or passive coupling devices.
多個晶片聯接器可以被設置成在豎直方向上包含至少一個通孔。The plurality of wafer couplers may be arranged to include at least one through hole in the vertical direction.
在由位於不同第一晶片層中的多個晶片聯接器形成的堆疊中,每個晶片聯接器在豎直方向上的中心軸線可以不完全重合。In a stack formed of multiple wafer couplers located in different first wafer layers, the vertical center axis of each wafer coupler may not exactly coincide.
在由位於不同第一晶片層中的多個晶片聯接器形成的堆疊中,每個晶片聯接器在豎直方向上的中心軸線可以與相隔一個第一晶片層的第一晶片層中的晶片聯接器在豎直方向上的中心軸線重合。In a stack formed of a plurality of wafer couplers located in different first wafer layers, the central axis in the vertical direction of each wafer coupler can be coupled to a wafer in a first wafer layer that is one first wafer layer apart The central axis of the device in the vertical direction coincides.
在由位於不同第一晶片層中的多個晶片聯接器形成的堆疊中,每個晶片聯接器在豎直方向上的中心軸線可以彼此不重合。In a stack formed of a plurality of wafer couplers located in different first wafer layers, the central axis of each wafer coupler in the vertical direction may not coincide with each other.
封裝件可以包括由多個第一晶片堆疊在一起而形成的第一晶片堆疊、放置在所述第一晶片堆疊上方第二晶片和由多個被分割的晶片聯接器堆疊在一起而形成的兩個晶片聯接器堆疊,其中,所述第二晶片被組裝在所述兩個晶片聯接器堆疊的上方,其中,所述第二晶片能夠通過所述晶片聯接器堆疊和所述重佈線層電聯接至所述第一晶片堆疊,或者所述第二晶片能夠通過所述晶片聯接器堆疊電聯接至所述第一晶片堆疊。The package may include a first wafer stack formed by stacking a plurality of first wafers together, a second wafer placed over the first wafer stack, and two wafers formed by stacking together a plurality of diced wafer connectors. a stack of wafer couplers, wherein the second wafer is assembled over the two stacks of wafer couplers, wherein the second wafer can be electrically coupled to the redistribution layer through the stack of wafer couplers to the first wafer stack, or the second wafer can be electrically coupled to the first wafer stack through the wafer coupler stack.
本發明的另一個方面提出了一種形成封裝件的方法,其可以包括:在載體的上方放置多個第一晶片層,每個第一晶片層包括正面朝下的多個第一晶片和在所述多個第一晶片之間的多個第一晶片聯接器和多個第二晶片聯接器;在所述多個第一晶片層上放置並組裝第二晶片層,所述第二晶片層包括正面朝下的多個第二晶片;在所述載體的上方對所述多個第一晶片層和所述第二晶片層進行模塑處理;去除所述載體以形成封裝件主體,並在所述封裝件主體的下方添加重佈線層和凸點;以及分割所述封裝件主體以形成多個所述封裝件。Another aspect of the present invention provides a method of forming a package, which may include: placing a plurality of first wafer layers over a carrier, each first wafer layer including a face-down plurality of first wafers and a plurality of first wafer couplers and a plurality of second wafer couplers between the plurality of first wafers; placing and assembling a second wafer layer on the plurality of first wafer layers, the second wafer layer comprising face down a plurality of second wafers; molding the plurality of first wafer layers and the second wafer layers over the carrier; removing the carrier to form a package body, and adding a redistribution layer and bumps below the package body; and dividing the package body to form a plurality of the packages.
多個第一晶片聯接器可以是有源聯接器件或無源聯接器件,並且所述多個第二晶片聯接器可以是有源聯接器件或無源聯接器件。The plurality of first wafer connectors may be active or passive coupling devices, and the plurality of second wafer connectors may be active or passive coupling devices.
多個第一晶片聯接器和多個第二晶片聯接器可以被設置成在豎直方向上包含至少一個通孔。The plurality of first wafer couplers and the plurality of second wafer couplers may be arranged to include at least one through hole in the vertical direction.
在每個第一晶片層中,每個第一晶片與相鄰的兩個第一晶片之間可以分別設置有一個第一晶片聯接器和一個第二晶片聯接器。In each first wafer layer, a first wafer coupler and a second wafer coupler may be respectively disposed between each first wafer and two adjacent first wafers.
在由位於不同第一晶片層中的多個第一晶片聯接器和多個第二晶片聯接器形成的堆疊中,相同的晶片聯接器可以彼此之間不相鄰。In a stack formed by a plurality of first wafer couplers and a plurality of second wafer couplers located in different first wafer layers, the same wafer couplers may not be adjacent to each other.
封裝件可以包括由多個第一晶片堆疊在一起而形成的第一晶片堆疊、放置在所述第一晶片堆疊上方第二晶片和由多個被分割的晶片聯接器堆疊在一起而形成的兩個晶片聯接器堆疊,其中,所述第二晶片被組裝在所述兩個晶片聯接器堆疊的上方,其中,所述第二晶片能夠通過所述晶片聯接器堆疊和所述重佈線層電聯接至所述第一晶片堆疊,或者所述第二晶片能夠通過所述晶片聯接器堆疊電聯接至所述第一晶片堆疊。The package may include a first wafer stack formed by stacking a plurality of first wafers together, a second wafer placed over the first wafer stack, and two wafers formed by stacking together a plurality of diced wafer connectors. a stack of wafer couplers, wherein the second wafer is assembled over the two stacks of wafer couplers, wherein the second wafer can be electrically coupled to the redistribution layer through the stack of wafer couplers to the first wafer stack, or the second wafer can be electrically coupled to the first wafer stack through the wafer coupler stack.
本發明的又一個方面提出了一種封裝件,包括:重佈線層,其包括第一側和第二側;多個凸點,其設置在所述重佈線層的第一側;第一晶片堆疊,其組裝在所述重佈線層的第二側,所述第一晶片堆疊包括被正面朝下放置的多個第一晶片;第一晶片聯接器堆疊和第二晶片聯接器堆疊,其放置並組裝在所述重佈線層的第二側上,並且分別水準地放置並組裝在所述第一晶片堆疊的兩側;以及第二晶片,其放置在所述第一晶片堆疊的上方並組裝在所述第一晶片聯接器堆疊和所述第二晶片聯接器堆疊的上方,其中,所述封裝件被模塑處理成塑封結構。Yet another aspect of the present invention provides a package including: a redistribution layer including a first side and a second side; a plurality of bumps disposed on the first side of the redistribution layer; a first die stack , which is assembled on the second side of the redistribution layer, the first wafer stack includes a plurality of first wafers placed face down; a first wafer coupler stack and a second wafer coupler stack, which are placed and assembled on the second side of the redistribution layer and placed horizontally and assembled on both sides of the first wafer stack, respectively; and a second wafer placed over the first wafer stack and assembled on Above the first die coupler stack and the second die coupler stack, wherein the package is molded into an overmolded structure.
第一和所述第二晶片聯接器堆疊可以均包括多個第一晶片聯接器和多個第二晶片聯接器。The first and second wafer coupler stacks may each include a plurality of first wafer couplers and a plurality of second wafer couplers.
第一晶片聯接器可以是有源聯接器件或無源聯接器件,並且第二晶片聯接器可以是有源聯接器件或無源聯接器件。The first wafer connector may be an active connector device or a passive connector device, and the second wafer connector may be an active connector device or a passive connector device.
第一晶片聯接器和第二晶片聯接器可以被設置成在豎直方向上包含至少一個通孔。The first wafer coupler and the second wafer coupler may be arranged to include at least one through hole in the vertical direction.
在所述第一晶片聯接器堆疊和所述第二晶片聯接器堆疊中,相同的晶片聯接器彼此之間可以不相鄰。The same wafer couplers may not be adjacent to each other in the first wafer coupler stack and the second wafer coupler stack.
在所述封裝件中,位於不同晶片聯接器堆疊中的相同的晶片聯接器彼此之間在豎直方向上可以不處於相同的高度。In the package, identical die couplers in different die coupler stacks may not be at the same vertical height from each other.
第一晶片聯接器堆疊和第二晶片聯接器堆疊可以均包括多個晶片聯接器,所述多個晶片聯接器中的每一個在水準方向上的面積可以不同。The first wafer coupler stack and the second wafer coupler stack may each include a plurality of wafer couplers, and each of the multiple wafer couplers may have a different area in the horizontal direction.
所述多個晶片聯接器中的每一個可以是有源聯接器件或無源聯接器件。Each of the plurality of wafer couplers may be an active link device or a passive link device.
所述多個晶片聯接器中的每一個可以被設置成在豎直方向上包含至少一個通孔。Each of the plurality of wafer couplers may be arranged to include at least one through hole in the vertical direction.
本發明的實施例利用晶片聯接器和一站式的WLP工藝實現晶片的堆疊,無需在功能晶片中使用TSV等垂直聯接晶片的技術。因此,降低了三維多層晶片封裝的複雜度和製造成本。Embodiments of the present invention utilize a wafer coupler and a one-stop WLP process to achieve stacking of wafers, without the need to use technologies such as TSV to vertically couple wafers in functional wafers. Therefore, the complexity and manufacturing cost of the three-dimensional multilayer chip package is reduced.
此外,本發明的實施例還能夠通過合理的佈局,從而使晶片和晶片聯接器的規格和尺寸盡可能地統一化和標準化,從而縮減在實施形成封裝件的方法之前製造晶片和晶片聯接器的成本。In addition, the embodiments of the present invention can also make the specifications and dimensions of the wafers and wafer connectors as unified and standardized as possible through a reasonable layout, thereby reducing the manufacturing time of the wafers and wafer connectors before implementing the method of forming the package. cost.
上述說明僅是本發明技術方案的概述,為了能夠更清楚瞭解本發明的技術手段,而可依照說明書的內容予以實施,並且為了讓本發明的上述和其它目的、特徵和優點能夠更明顯易懂,以下特舉本發明的具體實施方式。The above description is only an overview of the technical solutions of the present invention, in order to be able to understand the technical means of the present invention more clearly, it can be implemented according to the content of the description, and in order to make the above and other purposes, features and advantages of the present invention more obvious and easy to understand , the following specific embodiments of the present invention are given.
以下公開內容提供了許多用於實現本發明的不同特徵的不同實施例或實例。下面描述了元件和佈置的具體實例以簡化本發明。當然,這些僅僅是實例,而不旨在限制本發明。例如,以下描述中,在第二部件上方或者上形成第一部件可以包括第一部件和第二部件直接接觸形成的實施例,並且也可以包括在第一部件和第二部件之間可以形成額外的部件,從而使得第一部件和第二部件可以不直接接觸的實施例。此外,本發明可在各個實施例中重複參考標號和/或字元。該重複是為了簡單和清楚的目的,並且其本身不指示所討論的各個實施例和/或配置之間的關係。The following disclosure provides many different embodiments or examples for implementing different features of the invention. Specific examples of components and arrangements are described below to simplify the disclosure. Of course, these are only examples and are not intended to limit the invention. For example, in the following description, forming the first part over or on the second part may include embodiments in which the first part and the second part are formed in direct contact, and may also include additionally forming between the first part and the second part. parts so that the first part and the second part may not be in direct contact. Furthermore, the present disclosure may repeat reference numerals and/or characters in various embodiments. This repetition is for the purpose of simplicity and clarity, and does not in itself indicate a relationship between the various embodiments and/or configurations discussed.
而且,為便於描述,在此可以使用諸如“在…之下”、“在…下方”、“下部”、“在…之上”、“上部”、“在…上方”等空間相對術語,以描述如圖所示的一個元件或部件與另一個(或另一些)原件或部件的關係。除了圖中所示的方位外,空間相對術語旨在包括器件在使用或操作中的不同方位。器件可以以其它方式定向(旋轉90度或在其它方位上),而本文使用的空間相對描述符可以同樣地作出相應的解釋。另外,在本文中,術語“組裝”是指在各個電子器件之間實現電路聯接。術語“晶片”可以指各種類型的晶片,例如邏輯晶片、儲存晶片等。Also, for ease of description, spatially relative terms such as "below", "below", "lower", "above", "upper", "above" and the like may be used herein to Describe the relationship of one element or component to another (or other) elements or components as shown. In addition to the orientation shown in the figures, spatially relative terms are intended to encompass different orientations of the device in use or operation. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly. Also, as used herein, the term "assembled" refers to the realization of circuit coupling between various electronic devices. The term "wafer" may refer to various types of wafers, such as logic wafers, memory wafers, and the like.
圖1示出了根據本發明實施例的形成封裝件的方法的流程圖。在該方法中包括如下四個步驟:FIG. 1 shows a flowchart of a method of forming a package according to an embodiment of the present invention. The method includes the following four steps:
步驟100:在載體上放置並組裝晶片層。Step 100: Place and assemble wafer layers on a carrier.
步驟200:對晶片層進行模塑處理。Step 200: Molding the wafer layer.
步驟300:去除載體以形成封裝件主體,並添加重佈線層和凸點。Step 300: Remove the carrier to form the package body, and add redistribution layers and bumps.
步驟400:分割封裝件主體以形成封裝件。Step 400: Divide the package body to form the package.
在一些實施例中,載體是表面平整度很高的部件,可以將至少一個晶片層堆疊在載體上。在對晶片層進行模塑處理後,可以在載體上形成塑封結構。在一些實施例中,用於模塑處理的材料可以包括添加或沒有添加矽基或玻璃填料的環氧樹脂、有機聚合物或其它化合物為原料的固體或者液體塑封材料。In some embodiments, the carrier is a very flat surface component on which at least one wafer layer can be stacked. After molding the wafer layers, a molding structure can be formed on the carrier. In some embodiments, the materials used for the molding process may include solid or liquid molding materials based on epoxy resins, organic polymers, or other compounds with or without the addition of silicon-based or glass fillers.
在一些實施例中,去除載體的步驟、添加重佈線層和凸點的步驟和分割封裝件主體的步驟是晶圓級封裝(WLP)中已知的步驟。In some embodiments, the steps of removing the carrier, adding the redistribution layers and bumps, and dividing the package body are steps known in wafer level packaging (WLP).
下面將基於上述方法並參照各個附圖說明本發明的各個實施例。Various embodiments of the present invention will be described below based on the above method and with reference to the accompanying drawings.
圖2至4示出了形成根據本發明第一實施例的封裝件的剖面示意圖。圖2示出了在實施步驟100和200後的封裝結構的示意圖。2 to 4 illustrate schematic cross-sectional views of forming a package according to a first embodiment of the present invention. FIG. 2 shows a schematic diagram of the package structure after
如圖2所示,在載體10上放置並組裝了五個晶片層,其中位於下面的四個晶片層為第一晶片層,最上面的晶片層為第二晶片層。第一晶片層可以包括多個第一晶片11和多個晶片聯接器13。第二晶片層可以包括多個第二晶片12。在一些實施例中,可以具有至少兩個第一晶片層,而不僅限於四個第一晶片層。As shown in FIG. 2 , five wafer layers are placed and assembled on the
可以首先將第一晶片11和晶片聯接器13在水準方向上間隔地放置在載體10上以形成一個第一晶片層,然後可以在該第一晶片層上再堆疊多個第一晶片層,最後將第二晶片層放置並組裝在位於最上面的第一晶片層上。晶片包括正面和背面。在本領域中,具有例如凸點的表面被認為是正面。在一些實施例中,第一晶片11和第二晶片12是正面朝下放置的。The
在本文中,晶片聯接器可以用於電聯接不同的電子器件,所述電子器件例如包括晶片、重佈線層和其他晶片聯接器等各種器件;晶片聯接器所聯接的電子器件通常不與晶片聯接器處於相同的晶片層中。在一些實施例中,晶片聯接器可以由玻璃或矽等材料製成。在一些實施例中,晶片聯接器可以是有源聯接器件或無源聯接器件。例如,晶片聯接器在豎直方向上可以具有若干通孔14。可以在通孔14中填充導電介質。在一些實施例中,晶片聯接器的上表面和下表面上都可以設置導電線路,從而在一個表面上使不同的通孔電聯接。In this context, a wafer coupler may be used to electrically couple different electronic devices including, for example, a variety of devices including wafers, redistribution layers, and other wafer couplers; the wafer coupler typically connects electronic devices that are not coupled to the wafer are in the same wafer layer. In some embodiments, the wafer connector may be made of materials such as glass or silicon. In some embodiments, the wafer coupler may be an active link device or a passive link device. For example, the wafer coupler may have several through
在不同的晶片層之間還可以設置黏合點(adhesive dot),如在圖2中所示的黏合點18。黏合點用於隔離和固定不同的晶片層。在一些實施例中,黏合點由非導電介質製成。在一些實施例中,將省略對黏合點的說明。Adhesive dots, such as the
在將各個晶片層放置並組裝完畢,還可以對各個晶片層進行模塑處理後以形成塑封結構15。After the individual wafer layers are placed and assembled, the individual wafer layers may also be molded to form the
另外,如圖2所示,由位於不同第一晶片層中的多個晶片聯接器形成的任一堆疊中,每個晶片聯接器在豎直方向上的中心軸線不完全重合。例如,在任一晶片聯接器堆疊中的最下面的晶片聯接器的中心軸線不與位於該晶片聯接器上方的中心軸線重合,但是與相隔一個第一晶片層中的晶片聯接器的中心軸線重合。In addition, as shown in FIG. 2, in any stack formed by a plurality of wafer couplers located in different first wafer layers, the vertical center axis of each wafer coupler does not exactly coincide. For example, the center axis of the lowermost wafer coupler in any wafer coupler stack does not coincide with the center axis above the wafer coupler, but does coincide with the center axis of the wafer coupler in a first wafer layer apart.
在另一些實施例中,由位於不同第一晶片層中的多個晶片聯接器形成的任一堆疊中,每個晶片聯接器在豎直方向上的中心軸線不重合。例如,每個晶片聯接器的中心軸線都與其上方的晶片聯接器的中心軸線在水準方向上相隔預定距離。In other embodiments, in any stack formed from a plurality of wafer couplers located in different first wafer layers, the vertical center axis of each wafer coupler does not coincide. For example, the center axis of each wafer coupler is spaced a predetermined distance in the horizontal direction from the center axis of the wafer coupler above it.
圖3示出了在實施步驟300後的封裝件主體的結構。FIG. 3 shows the structure of the package body after
如圖3所示,五個晶片層已被模塑處理,並形成了塑封結構15。在去除載體10後,可以在封裝件主體的下方添加重佈線層16,並且在重佈線層16下添加凸點17。As shown in FIG. 3 , five wafer layers have been molded to form an encapsulated
圖4示出了在實施步驟400後的封裝件的結構。FIG. 4 shows the structure of the package after
該封裝件包括由八個被分割的晶片聯接器形成的兩個晶片聯接器堆疊、由四個第一晶片11形成的第一晶片堆疊和一個第二晶片12。The package includes two wafer coupler stacks formed of eight diced wafer couplers, a first wafer stack formed of four
第二晶片12可以分別通過兩個晶片聯接器堆疊和重佈線層、或可以分別通過兩個晶片聯接器堆疊而電聯接到第一晶片堆疊。在一些實施例中,第二晶片12可以通過任意一個晶片聯接器堆疊和重佈線層電聯接至第一晶片堆疊中的任意一個第一晶片11,或者第二晶片12可以通過任意一個晶片聯接器堆疊電聯接至所述第一晶片堆疊中的任意一個第一晶片11。The
當然,由於第一晶片層的數量可以為至少兩個,因此第一晶片堆疊中的第一晶片11的數量以及每個晶片聯接器堆疊中的晶片聯接器的數量也可以為至少兩個。Of course, since the number of first wafer layers may be at least two, the number of
在一些實施例中,由於在圖2和3中的每個晶片聯接器堆疊中的每個晶片聯接器在豎直方向上的中心軸線不完全重合,因此在如圖4所示的由被分割的晶片聯接器形成的任一堆疊中,每個被分割的晶片聯接器與相隔一個晶片聯接器的晶片聯接器在水準方向上的面積相同。In some embodiments, since the center axes in the vertical direction of each wafer coupler in each wafer coupler stack in FIGS. In any stack formed by the wafer couplers, each divided wafer coupler has the same area in the horizontal direction as the wafer coupler separated by one wafer coupler.
在另一些實施例中,由於還存在每個晶片聯接器堆疊中的每個晶片聯接器在豎直方向上的中心軸線不重合的情況,因此在每個封裝件中的多個晶片聯接器可以形成多種形式的晶片聯接器堆疊,例如梯形堆疊或倒梯形堆疊。這使得在每個晶片聯接器堆疊中,多個晶片聯接器中的每一個在水準方向上的面積不同。In other embodiments, multiple die couplers in each package may Various forms of wafer connector stacks are formed, such as trapezoidal stacks or inverted trapezoidal stacks. This results in a different area in the horizontal direction for each of the plurality of wafer couplers in each wafer coupler stack.
根據本發明第一實施例,通過對晶片和晶片聯接器的合理佈局,能夠使得多個第一晶片和多個晶片聯接器的規格或尺寸統一,從而縮減在實施形成封裝件的方法之前製造晶片和晶片聯接器的成本。According to the first embodiment of the present invention, by rationally arranging the wafers and the wafer connectors, the specifications or sizes of the plurality of first wafers and the plurality of wafer connectors can be unified, thereby reducing the number of wafers manufactured before implementing the method of forming the package. and wafer coupler cost.
圖5至7示出了形成根據本發明第二實施例的封裝件的剖面示意圖。第二實施例是第一實施例的變體。圖5示出了在實施步驟100和200後的封裝結構的示意圖。5 to 7 illustrate schematic cross-sectional views of forming a package according to a second embodiment of the present invention. The second embodiment is a modification of the first embodiment. FIG. 5 shows a schematic diagram of the package structure after
如圖5所示,在載體20上放置並組裝了五個晶片層,其中位於下面的四個晶片層為第一晶片層,最上面的晶片層為第二晶片層。第一晶片層可以包括多個第一晶片21、多個第一晶片聯接器23和多個第二晶片聯接器28。第二晶片層可以包括多個第二晶片22。在一些實施例中,可以具有至少兩個第一晶片層,而不僅限於四個第一晶片層。As shown in FIG. 5 , five wafer layers are placed and assembled on the
可以首先將第一晶片21、第一晶片聯接器23和第二晶片聯接器28在水準方向上間隔地放置在載體20上以形成一個第一晶片層。例如,任意一個第一晶片的左右兩側是不同的晶片聯接器。The
然後可以在該第一晶片層上再堆疊多個第一晶片層。在一些實施例中,每個第一晶片層中的晶片聯接器的放置位置不完全相同。例如,相鄰的第一晶片層中的晶片聯接器的放置位置完全相反,使得在由第一晶片聯接器23和第二晶片聯接器28形成的晶片聯接器堆疊中,第一晶片聯接器23位於兩個第二晶片聯接器28之間而第二晶片聯接器28位於兩個第一晶片聯接器23之間,如圖5所示。A plurality of first wafer layers may then be stacked on the first wafer layer. In some embodiments, the placement positions of the wafer couplers in each of the first wafer layers are not identical. For example, the placement positions of wafer couplers in adjacent first wafer layers are diametrically opposed, so that in the wafer coupler stack formed by the
最後可以將第二晶片層放置並組裝在位於最上面的第一晶片層上。晶片包括正面和背面。在本領域中,具有例如凸點的表面被認為是正面。在一些實施例中,第一晶片21和第二晶片22是正面朝下放置的。Finally the second wafer layer can be placed and assembled on the uppermost first wafer layer. The wafer includes a front side and a back side. In the art, a surface with, for example, bumps is considered a front face. In some embodiments, the
在將各個晶片層放置並組裝完畢,還可以對各個晶片層進行模塑處理後以形成塑封結構25。After the individual wafer layers are placed and assembled, the individual wafer layers can also be molded to form the
圖6示出了在實施步驟300後的封裝件主體的結構。FIG. 6 shows the structure of the package body after
如圖6所示,五個晶片層已被模塑處理,並形成了塑封結構25。在去除載體20後,可以在封裝件主體的下方添加重佈線層26,並且在重佈線層26下添加凸點27。As shown in FIG. 6 , five wafer layers have been molded and an
圖7示出了在實施步驟400後的封裝件的結構。FIG. 7 shows the structure of the package after
該封裝件包括由八個被分割的晶片聯接器形成的兩個晶片聯接器堆疊、由四個第一晶片21形成的第一晶片堆疊和一個第二晶片22。每個晶片聯接器堆疊包括間隔佈置的兩個被分割的第一晶片聯接器23和兩個被分割的第二晶片聯接器28,使得相同的晶片聯接器彼此之間不相鄰。在一些實施例中,位於不同晶片聯接器堆疊中的相同的晶片聯接器彼此之間在豎直方向上不處於相同的高度。The package includes two die coupler stacks formed from eight diced die couplers, a first die stack formed from four
第二晶片22可以分別通過兩個晶片聯接器堆疊和重佈線層、或可以分別通過兩個晶片聯接器堆疊而電聯接到第一晶片堆疊。在一些實施例中,第二晶片22可以通過任意一個晶片聯接器堆疊和重佈線層電聯接至第一晶片堆疊中的任意一個第一晶片21,或者第二晶片22可以通過任意一個晶片聯接器堆疊電聯接至所述第一晶片堆疊中的任意一個第一晶片21。The
當然,由於第一晶片層的數量可以為至少兩個,因此第一晶片堆疊中的第一晶片的數量以及每個晶片聯接器堆疊中的晶片聯接器的數量也可以為至少兩個。Of course, since the number of first wafer layers may be at least two, the number of first wafers in the first wafer stack and the number of wafer couplers in each wafer coupler stack may also be at least two.
根據本發明第二實施例,通過對晶片和晶片聯接器的合理佈局,能夠使得多個第一晶片、部分晶片聯接器的規格或尺寸統一,從而縮減在實施形成封裝件的方法之前製造晶片和晶片聯接器的成本。According to the second embodiment of the present invention, by rationally arranging the wafers and the wafer connectors, the specifications or sizes of the plurality of first wafers and part of the wafer connectors can be unified, thereby reducing the number of wafers and chips produced before implementing the method of forming the package. The cost of the wafer coupler.
上面概述了若干實施例的特徵,使得本領域人員可以更好地理解本發明的方面。本領域人員應該理解,它們可以容易地使用本發明作為基礎來設計或修改用於實施與本文所介紹實施例相同的目的和/或實現相同優勢的其它工藝和結構。本領域技術人員也應該意識到,這種等同構造並不背離本發明的精神和範圍,並且在不背離本發明的精神和範圍的情況下,本文中它們可以做出多種變化、替換以及改變。The features of several embodiments have been outlined above so that those skilled in the art may better understand aspects of the invention. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments described herein. Those skilled in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the present invention, and that they may make various changes, substitutions and alterations herein without departing from the spirit and scope of the present invention.
步驟100:在載體上放置並組裝晶片層 步驟200:對晶片層進行模塑處理 步驟300:去除載體以形成封裝件主體,並添加重佈線層和凸點 步驟400:分割封裝件主體以形成封裝件 10:載體 11:第一晶片 12:第二晶片 13:晶片聯接器 14:通孔 15:塑封結構 16:重佈線層 17:凸點 18:黏合點 20:載體 21:第一晶片 22:第二晶片 23:第一晶片聯接器 25:塑封結構 26:重佈線層 27:凸點 28:第二晶片聯接器 Step 100: Place and Assemble the Wafer Layers on the Carrier Step 200: Molding the wafer layer STEP 300: Remove carrier to form package body and add redistribution layers and bumps STEP 400: Divide the package body to form the package 10: Carrier 11: The first wafer 12: Second chip 13: Wafer Connector 14: Through hole 15: Plastic structure 16: Redistribution layer 17: bump 18: Bonding point 20: Carrier 21: The first wafer 22: Second wafer 23: First wafer connector 25: Plastic structure 26: Rewiring layer 27: bump 28: Second wafer connector
通過參考附圖閱讀下文的詳細描述,本發明示例性實施方式的上述以及其他目的、特徵和優點將變得易於理解。在附圖中,以示例性而非限制性的方式示出了本發明的若干實施方式,其中:The above and other objects, features and advantages of exemplary embodiments of the present invention will become readily understood by reading the following detailed description with reference to the accompanying drawings. In the accompanying drawings, several embodiments of the present invention are shown by way of example and not limitation, wherein:
在附圖中,相同或對應的標號表示相同或對應的部分。In the drawings, the same or corresponding reference numerals denote the same or corresponding parts.
[圖1]示出了根據本發明實施例的形成封裝件的方法的流程圖。 [圖2至4]示出了形成根據本發明第一實施例的封裝件的剖面示意圖。 [圖5至7]示出了形成根據本發明第二實施例的封裝件的剖面示意圖。 [ FIG. 1 ] A flowchart showing a method of forming a package according to an embodiment of the present invention. 2 to 4 are schematic cross-sectional views showing the formation of the package according to the first embodiment of the present invention. [ FIGS. 5 to 7 ] are schematic cross-sectional views showing the formation of a package according to a second embodiment of the present invention.
步驟100:在載體上放置並組裝晶片層 Step 100: Place and Assemble the Wafer Layers on the Carrier
步驟200:對晶片層進行模塑處理 Step 200: Molding the wafer layer
步驟300:去除載體以形成封裝件主體,並添加重佈線層和凸點 STEP 300: Remove carrier to form package body and add redistribution layers and bumps
步驟400:分割封裝件主體以形成封裝件 STEP 400: Divide the package body to form the package
Claims (22)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202011359780.0 | 2020-11-27 | ||
CN202011359780.0A CN112435966B (en) | 2020-11-27 | 2020-11-27 | Package and method of forming the same |
Publications (2)
Publication Number | Publication Date |
---|---|
TW202221804A true TW202221804A (en) | 2022-06-01 |
TWI803071B TWI803071B (en) | 2023-05-21 |
Family
ID=74699320
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW110144184A TWI803071B (en) | 2020-11-27 | 2021-11-26 | Packaging piece and method of forming the same |
Country Status (3)
Country | Link |
---|---|
KR (1) | KR102612873B1 (en) |
CN (1) | CN112435966B (en) |
TW (1) | TWI803071B (en) |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200921889A (en) * | 2007-11-01 | 2009-05-16 | Advanced Chip Eng Tech Inc | Package on package structure for semiconductor devices and method of the same |
US7838337B2 (en) * | 2008-12-01 | 2010-11-23 | Stats Chippac, Ltd. | Semiconductor device and method of forming an interposer package with through silicon vias |
US9881859B2 (en) * | 2014-05-09 | 2018-01-30 | Qualcomm Incorporated | Substrate block for PoP package |
US9601461B2 (en) * | 2015-08-12 | 2017-03-21 | Semtech Corporation | Semiconductor device and method of forming inverted pyramid cavity semiconductor package |
WO2017160284A1 (en) * | 2016-03-16 | 2017-09-21 | Intel Corporation | Stairstep interposers with integrated shielding for electronics packages |
CN106206458B (en) * | 2016-07-17 | 2018-09-25 | 高燕妮 | A kind of stacked integrated circuit encapsulating structure |
KR102600106B1 (en) * | 2016-09-13 | 2023-11-09 | 삼성전자주식회사 | Method of manufacturing semiconductor packages |
KR20200076778A (en) * | 2018-12-19 | 2020-06-30 | 삼성전자주식회사 | Method of fabricating semiconductor package |
-
2020
- 2020-11-27 CN CN202011359780.0A patent/CN112435966B/en active Active
-
2021
- 2021-11-25 KR KR1020210164057A patent/KR102612873B1/en active IP Right Grant
- 2021-11-26 TW TW110144184A patent/TWI803071B/en active
Also Published As
Publication number | Publication date |
---|---|
KR20220074766A (en) | 2022-06-03 |
CN112435966A (en) | 2021-03-02 |
TWI803071B (en) | 2023-05-21 |
KR102612873B1 (en) | 2023-12-12 |
CN112435966B (en) | 2021-09-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN106952831B (en) | Device using thermally and mechanically strengthened layers and method of making same | |
TWI587467B (en) | Semiconductor package structure and method for forming the same | |
TWI720801B (en) | High bandwidth die to die interconnect with package area reduction | |
CN108766940B (en) | Stress compensation layer for 3D packaging | |
US7820483B2 (en) | Injection molded soldering process and arrangement for three-dimensional structures | |
US20140138791A1 (en) | Semiconductor package and fabrication method thereof | |
WO2018063830A1 (en) | Interconnection of an embedded die | |
TWI803071B (en) | Packaging piece and method of forming the same | |
TWI782803B (en) | Packaging piece and method of forming packaging piece | |
TWI826871B (en) | Packaging piece and method of forming the same | |
TWI810754B (en) | Package and method of forming same | |
US20220173073A1 (en) | Chip Package and Method of Forming | |
TWI803084B (en) | Method for forming packaging piece and packaging piece | |
CN210516718U (en) | Packaging structure | |
WO2024031745A1 (en) | Semiconductor packaging structure and manufacturing method therefor | |
CN115440604A (en) | Multi-chip packaging structure for filter chip and construction method thereof | |
CN117650127A (en) | Semiconductor packaging structure and preparation method thereof | |
CN117766415A (en) | Method for constructing vertical interconnection packaging structure and corresponding structure | |
CN111276457A (en) | Dual chip memory package |