TW202215398A - Shift register and display device - Google Patents
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3674—Details of drivers for scan electrodes
- G09G3/3677—Details of drivers for scan electrodes suitable for active matrices only
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3696—Generation of voltages supplied to electrode drivers
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2310/00—Command of the display device
- G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
- G09G2310/0264—Details of driving circuits
- G09G2310/0286—Details of a shift registers arranged for use in a driving circuit
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Abstract
Description
本發明係有關移位暫存器(shift register)及顯示裝置。The present invention relates to a shift register and a display device.
使用薄膜電晶體(TFT;Thin Film Transistor)作為主動(active)元件的主動矩陣(active matrix)型的液晶顯示裝置、或有機EL(electroluminescence;電致發光)顯示裝置係具備將TFT配置成矩陣狀的基板(稱為TFT基板)。TFT基板係具有:沿行(column)方向分別延伸且被輸入圖像信號之複數條信號線、及沿列(row)方向分別延伸的複數條掃描線。An active matrix type liquid crystal display device using a thin film transistor (TFT; Thin Film Transistor) as an active element, or an organic EL (electroluminescence; electroluminescence) display device is equipped with TFTs arranged in a matrix. substrate (called TFT substrate). The TFT substrate has a plurality of signal lines respectively extending in the row (column) direction and to which image signals are input, and a plurality of scanning lines respectively extending in the column (row) direction.
近年來係將驅動掃描線的閘極驅動器(gate driver)形成在形成TFT基板上,謀得驅動器IC(Integrated Circuit;積體電路)的成本(cost)削減及顯示面板(panel)的窄邊框化。此外,藉由將閘極驅動器形成在TFT基板上,消除了掃描線佈線的限制,故成為了對於在車載用等要求高的「異型顯示面板」也能派上用場的技術。如上述的技術係稱為GIP(Gate driver in panel;面板內閘極驅動)、或GOA(Gate driver on array;閘極驅動器陣列)。In recent years, gate drivers for driving scanning lines have been formed on TFT substrates, resulting in cost reduction of driver ICs (Integrated Circuits) and narrowing of display panels. . In addition, by forming the gate driver on the TFT substrate, the limitation of the scan line wiring is eliminated, so it is a technology that can also be used for "special-shaped display panels" that are highly required for automotive applications. The above technology is called GIP (Gate driver in panel; gate driver in panel) or GOA (Gate driver on array; gate driver array).
在以TFT形成的掃描線驅動電路,其使用供將脈波(pulse)信號依序輸出至複數條掃描線之用的移位暫存器。該移位暫存器係具備將脈波信號輸出至掃描線的TFT(稱為輸出TFT)、在掃描線為非選擇時使掃描線下拉(pull down)的TFT(稱為下拉TFT)、及反相器(inverter)電路。具備反相器電路的目的,在於抑制輸出TFT透過閘極.汲極(drain)間的寄生電容致使自己誤動作的所謂的自切通(self turn-on)現象。In the scanning line driving circuit formed by TFT, a shift register for sequentially outputting a pulse signal to a plurality of scanning lines is used. The shift register includes a TFT (referred to as an output TFT) that outputs a pulse wave signal to a scan line, a TFT (referred to as a pull-down TFT) that pulls down the scan line when the scan line is not selected, and Inverter circuit. The purpose of having an inverter circuit is to inhibit the output TFT from passing through the gate. The so-called self-turn-on phenomenon in which the parasitic capacitance between the drains causes malfunction of itself.
該反相器電路係必須以在掃描線為非選擇時將掃描線保持在關斷(off)的方式動作。因此,在下拉TFT的閘極係持續施加正向偏壓(bias),TFT的特性隨時間而變化(例如臨限電壓的偏移(shift))。此時,產生因反相器電路的功能不良和掃描線的下拉的功能不良致生的誤動作。 [先前技術文獻] [專利文獻] This inverter circuit must operate so as to keep the scan line off when the scan line is not selected. Therefore, a forward bias (bias) is continuously applied to the gate of the pull-down TFT, and the characteristics of the TFT change with time (for example, a threshold voltage shift (shift)). At this time, malfunctions due to malfunction of the inverter circuit and malfunction of the pull-down of the scanning line occur. [Prior Art Literature] [Patent Literature]
專利文獻1:日本特許第5190281號公報 專利文獻2:日本特許第5399555號公報 Patent Document 1: Japanese Patent No. 5190281 Patent Document 2: Japanese Patent No. 5399555
[發明欲解決之課題][The problem to be solved by the invention]
本發明係提供能夠抑制誤動作的移位暫存器及顯示裝置。 [用以解決課題之手段] The present invention provides a shift register and a display device capable of suppressing malfunction. [means to solve the problem]
本發明的第1態樣的移位暫存器係具備分別連接至複數條掃描線,串級連接的複數個核心(core)電路。前述複數個核心電路的各者係含有:輸入部,其將與上一段的核心電路的輸出信號對應的輸入信號轉送至第1節點(node);第1反相器電路,其藉由第1訊框信號而設成為致能,在第2節點保持前述第1節點的反轉信號;第2反相器電路,其藉由與前述第1訊框信號互補的第2訊框信號而設成為致能,在第3節點保持前述第1節點的反轉信號;輸出部,其含有輸出電晶體及電容器(capacitor),前述輸出電晶體係具有連接到前述第1節點的閘極、接收第1時脈(clock)信號或第2時脈信號的第1端子、及連接到掃描線的第2端子,前述電容器係具有連接到前述第1節點的第1電極、及連接到前述掃描線的第2電極;第1下拉電晶體,其具有連接到前述第2節點的閘極、連接到前述掃描線的第1端子、及被供給基準電壓的第2端子;以及第2下拉電晶體,其具有連接到前述第3節點的閘極、連接到前述掃描線的第1端子、及被供給前述基準電壓的第2端子。第奇數個核心電路係接收前述第1時脈信號;第偶數個核心電路係接收與前述第1時脈信號互補的前述第2時脈信號。The shift register according to the first aspect of the present invention includes a plurality of core circuits connected to a plurality of scan lines respectively and connected in series. Each of the above-mentioned plurality of core circuits includes: an input unit that transfers an input signal corresponding to an output signal of the core circuit of the previous stage to a first node (node); a first inverter circuit that uses the first The frame signal is set to be enabled, and the inverted signal of the first node is maintained at the second node; the second inverter circuit is set to the second frame signal complementary to the first frame signal. enable, hold the inverted signal of the first node at the third node; the output part includes an output transistor and a capacitor (capacitor), the output transistor system has a gate connected to the first node, receives the first A first terminal of a clock signal or a second clock signal, and a second terminal connected to the scan line, the capacitor has a first electrode connected to the first node, and a first electrode connected to the scan line. two electrodes; a first pull-down transistor having a gate connected to the second node, a first terminal connected to the scan line, and a second terminal to which a reference voltage is supplied; and a second pull-down transistor having A gate connected to the third node, a first terminal connected to the scanning line, and a second terminal to which the reference voltage is supplied. The odd-numbered core circuits receive the first clock signal; the even-numbered core circuits receive the second clock signal complementary to the first clock signal.
本發明的第2態樣的移位暫存器係在第1態樣的移位暫存器中,更具備第1電晶體,前述第1電晶體係連接在前述第2節點與前述第3節點之間,且具有連接在前述第1節點的閘極。The shift register of the second aspect of the present invention is the shift register of the first aspect, further comprising a first transistor, and the first transistor system is connected between the second node and the third between the nodes, and has a gate connected to the first node.
本發明的第3態樣的移位暫存器係在第1或第2態樣的移位暫存器中,前述第1反相器電路係含有第2及第3電晶體;前述第2電晶體係具有連接到前述第2節點的閘極、連接到前述第1節點的第1端子、及被供給前述基準電壓的第2端子;前述第3電晶體係具有連接到前述第1節點的閘極、連接到前述第2節點的第1端子、及被供給前述基準電壓的第2端子;前述第2反相器電路係含有第4及第5電晶體;前述第4電晶體係具有連接到前述第3節點的閘極、連接到前述第1節點的第1端子、及被供給前述基準電壓的第2端子;前述第5電晶體係具有連接到前述第1節點的閘極、連接到前述第3節點的第1端子、及被供給前述基準電壓的第2端子。A shift register of a third aspect of the present invention is the shift register of the first or second aspect, wherein the first inverter circuit includes second and third transistors; the second The transistor system has a gate connected to the second node, a first terminal connected to the first node, and a second terminal to which the reference voltage is supplied; the third transistor system has a gate connected to the first node a gate, a first terminal connected to the second node, and a second terminal to which the reference voltage is supplied; the second inverter circuit includes fourth and fifth transistors; the fourth transistor has a connection A gate to the third node, a first terminal connected to the first node, and a second terminal to which the reference voltage is supplied; the fifth transistor system has a gate connected to the first node, connected to the The first terminal of the third node, and the second terminal to which the reference voltage is supplied.
本發明的第4態樣的移位暫存器係在第3態樣的移位暫存器中,當設前述第2電晶體的通道(channel)寬度為W1、設前述第3電晶體的通道寬度為W2,則具有「W2≦W1≦2×W2」的關係。The shift register of the fourth aspect of the present invention is in the shift register of the third aspect, when the channel width of the second transistor is set to be W1, and the width of the channel of the third transistor is set to be W1. When the channel width is W2, there is a relationship of “W2≦W1≦2×W2”.
本發明的第5態樣的移位暫存器係在第1或第2態樣的移位暫存器中,前述第1反相器電路係含有將前述第1訊框信號轉送至前述第2節點的第6電晶體;前述第2反相器電路係含有將前述第2訊框信號轉送至前述第3節點的第7電晶體。The shift register of the fifth aspect of the present invention is in the shift register of the first or second aspect, and the first inverter circuit includes the step of transferring the first frame signal to the first frame signal. The sixth transistor of the second node; the second inverter circuit includes a seventh transistor that transfers the second frame signal to the third node.
本發明的第6態樣的移位暫存器係在第1或第2態樣的移位暫存器中,前述輸入部係含有重置(reset)電晶體,前述重置電晶體係具有被輸入有與下一段的核心電路的輸出信號對應的重置信號之閘極、連接到前述第1節點的第1端子、及被供給前述基準電壓的第2端子。In the shift register of the sixth aspect of the present invention, in the shift register of the first or second aspect, the input portion includes a reset transistor, and the reset transistor system has A gate to which a reset signal corresponding to an output signal of the core circuit of the next stage is input, a first terminal connected to the first node, and a second terminal to which the reference voltage is supplied.
本發明的第7態樣的移位暫存器係在第6態樣的移位暫存器中,在最末段的核心電路所含的重置電晶體的閘極係輸入在前述最末段的核心電路的輸出信號設成為致能後設成為致能的清除(clear)信號。In the shift register of the seventh aspect of the present invention, in the shift register of the sixth aspect, the gate of the reset transistor included in the core circuit of the last stage is input at the last The output signal of the core circuit of the segment is set to be enabled and then set to be the enabled clear signal.
本發明的第8態樣的移位暫存器係在第1或第2態樣的移位暫存器中,在第1段的核心電路的輸入部係輸入用以開始進行掃描動作的啟動(start)信號。In the shift register of the eighth aspect of the present invention, in the shift register of the first or second aspect, the input part of the core circuit of the first stage is inputted with a start for starting the scanning operation. (start) signal.
本發明的第9態樣的顯示裝置係具備第1態樣的移位暫存器。A display device of a ninth aspect of the present invention includes the shift register of the first aspect.
本發明的第10態樣的顯示裝置係在第9態樣的顯示裝置中,更具備含有複數個像素的像素陣列。前述複數條掃描線係連接至前述像素陣列。 [發明之效果] The display device of the tenth aspect of the present invention is the display device of the ninth aspect, further including a pixel array including a plurality of pixels. The plurality of scan lines are connected to the pixel array. [Effect of invention]
依據本發明,能夠提供能夠抑制誤動作的移位暫存器及顯示裝置。According to the present invention, it is possible to provide a shift register and a display device capable of suppressing malfunction.
[用以實施發明的形態][Form for carrying out the invention]
以下,針對實施形態,參照圖式進行說明。惟,圖式屬示意性或概念性,各圖式的尺寸及比率等未必一定與實際大小一樣。此外,在圖式彼此間,即使顯示相同的部分,尺寸的關係和比率亦或有可能互異。具體而言,以下所示的數個實施形態乃係用以將本發明的技術思想予以具體化的裝置及方法之例示,本發明的技術思想並不以構成零件的形狀、構造、配置等界定。另外,在以下的說明中,針對具有相同功能及構成的要素係給予相同的元件符號,省略重複的說明。Hereinafter, the embodiment will be described with reference to the drawings. However, the drawings are schematic or conceptual, and the dimensions and ratios of each drawing may not necessarily be the same as the actual size. Moreover, even if the same part is shown between drawings, the relationship and ratio of a dimension may differ from each other. Specifically, the several embodiments shown below are examples of apparatuses and methods for embodying the technical idea of the present invention, and the technical idea of the present invention is not limited by the shape, structure, arrangement, etc. of the constituent parts. . In the following description, elements having the same functions and configurations are given the same reference numerals, and overlapping descriptions are omitted.
[1] 液晶顯示裝置1的構成[1] Configuration of the liquid
在本實施形態中,就顯示裝置而言,舉液晶顯示裝置為例進行說明。In the present embodiment, as a display device, a liquid crystal display device will be described as an example.
圖1係本發明的實施形態的液晶顯示裝置1的佈局圖。本實施形態的液晶顯示裝置1係例如由GIP(gate driver in panel)或GOA(gate driver on array)型的LCD(liquid crystal display;液晶顯示器)構成。液晶顯示裝置1係具備:像素陣列10、掃描線驅動器(表記為GIP)11-1、11-2、及積體電路(IC;integrated circuit)2。FIG. 1 is a layout diagram of a liquid
在像素陣列10係配設:分別沿X方向延伸的複數條掃描線GL、及分別沿與X方向交叉的Y方向延伸的複數條信號線SL。The
在像素陣列10的X方向兩側係分別配置掃描線驅動器11-1、11-2。掃描線驅動器11-1係連接至第奇數條掃描線GL。掃描線驅動器11-2係連接至第偶數條掃描線GL。Scan line drivers 11 - 1 and 11 - 2 are arranged on both sides of the
積體電路2係連接至複數條信號線SL。此外,積體電路2係連接至掃描線驅動器11-1、11-2。積體電路2係以IC晶片(chip)構成。The
圖2係實施形態的液晶顯示裝置1的方塊圖。液晶顯示裝置1係具備:像素陣列10、掃描線驅動電路11、信號線驅動電路12、共同電極驅動電路13、電壓產生電路14、及控制電路15。圖1中所示的掃描線驅動器11-1、11-2係對應圖2中所示的掃描線驅動電路11。圖1中所示的積體電路2係含有圖2中所示的信號線驅動電路12、共同電極驅動電路13、電壓產生電路14、及控制電路15。FIG. 2 is a block diagram of the liquid
像素陣列10係具備排列成矩陣狀的複數個像素PX。在像素陣列10係配設:分別沿X方向延伸的複數條掃描線GL1至GLm、及分別沿Y方向延伸的複數條信號線SL1至SLn。「m」及「n」分別為2以上的整數。在掃描線GL與信號線SL的交叉區域係配置像素PX。The
掃描線驅動電路11係電性連接至複數條掃描線GL。掃描線驅動電路11係根據從控制電路15送來的控制信號,將導通/關斷(on/off)像素PX所含的開關(switching)元件之用的掃描信號送至像素陣列10。The scan
信號線驅動電路12係電性連接至複數條信號線SL。信號線驅動電路12係從控制電路15接收控制信號及顯示資料(data)。信號線驅動電路12係根據控制信號,將與顯示資料對應的階調信號(驅動電壓)送至像素陣列10。The signal
共同電極驅動電路13係生成共同電壓Vcom,將該共同電壓Vcom供給至像素陣列10內的共同電極。共同電極乃係以與按複數個像素PX的每一個而設的複數個像素電極隔著液晶層相對向的方式設置的電極。The common
電壓產生電路14係生成液晶顯示裝置1的動作需要的各種電壓,將該些電壓供給至對應的電路。The
控制電路15係統籌控制液晶顯示裝置1的動作。控制電路15係從外部接收圖像資料DT及控制信號CNT。控制電路15係根據圖像資料DT,生成各種控制信號,將該些控制信號送至對應的電路。The
[2] 像素PX的電路構成[2] Circuit configuration of pixel PX
接著,針對像素陣列10所含的像素PX的電路構成進行說明。圖3係圖2中所示的像素陣列10的電路圖。Next, the circuit configuration of the pixels PX included in the
像素PX係具備:開關元件(主動元件)16、液晶電容(液晶元件)Clc、及儲存電容Cs。就開關元件16而言係例如使用TFT(Thin Film Transistor),或者使用n通道TFT。The pixel PX includes a switching element (active element) 16 , a liquid crystal capacitor (liquid crystal element) Clc, and a storage capacitor Cs. For the switching
TFT16的源極(source)係連接至信號線SL,閘極係連接至掃描線GL,汲極係連接至液晶電容Clc。作為液晶元件的液晶電容Clc係藉由像素電極、共同電極、及被前述兩電極包夾的液晶層而構成。The source of the
儲存電容Cs係並聯連接至液晶電容Clc。儲存電容Cs係具有抑制發生在像素電極的電位變動並且將施加在像素電極的驅動電壓在直到與下一個信號對應的驅動電壓被施加為止的期間予以保持之功能。儲存電容Cs係藉由像素電極、蓄積電極(亦稱為儲存電容線)、及被前述兩電極包夾的絕緣膜而構成。在共同電極及蓄積電極係藉由共同電極驅動電路13而施加共同電壓Vcom。The storage capacitor Cs is connected in parallel to the liquid crystal capacitor Clc. The storage capacitor Cs has a function of suppressing the potential fluctuation occurring in the pixel electrode and holding the driving voltage applied to the pixel electrode until the driving voltage corresponding to the next signal is applied. The storage capacitor Cs is composed of a pixel electrode, a storage electrode (also called a storage capacitor line), and an insulating film sandwiched by the two electrodes. The common voltage Vcom is applied to the common electrode and the storage electrode by the common
[3] 掃描線驅動電路11的構成[3] Configuration of scanning
接著,針對掃描線驅動電路11的構成進行說明。掃描線驅動電路11係具備移位暫存器11A。圖4係掃描線驅動電路11所含的移位暫存器11A的方塊圖。Next, the configuration of the scanning
移位暫存器11A係具備複數個核心電路RG1至RGm。核心電路RG1至RGm係分別對應掃描線GL1至GLm而設。在本說明書中,複數個核心電路RG1至RGm的共同說明係表記為「核心電路RG」。The
複數個核心電路RG1至RGm係串級連接。各核心電路RG係作為暫時記憶輸入資料的暫存器發揮功能。移位暫存器11A係同步於時脈信號而動作,以將輸入資料(脈波信號)依序移位的方式動作。A plurality of core circuits RG1 to RGm are connected in series. Each core circuit RG functions as a register for temporarily storing input data. The
各核心電路RG係以相應於輸入至自身的複數個信號的條件將脈波信號輸出的方式構成。各核心電路RG係具備:輸入端子V_IN、輸出端子OUT、訊框端子Fr_o、訊框端子Fr_e、時脈端子CLK、清除端子CR、及重置端子RST_IN。Each core circuit RG is configured to output a pulse wave signal according to the conditions of a plurality of signals input to itself. Each core circuit RG includes an input terminal V_IN, an output terminal OUT, a frame terminal Fr_o, a frame terminal Fr_e, a clock terminal CLK, a clear terminal CR, and a reset terminal RST_IN.
複數個核心電路RG1至RGm係以任意的核心電路RGi的輸出端子OUT連接至下一段的核心電路RG(i+1)的輸入端子V_IN的方式構成,而形成串級連接。i為1至m之中的任意數。另外,在第1段的核心電路RG1的輸入端子V_IN係輸入啟動信號ST。The plurality of core circuits RG1 to RGm are configured such that the output terminal OUT of an arbitrary core circuit RGi is connected to the input terminal V_IN of the core circuit RG(i+1) of the next stage, and is connected in series. i is any number from 1 to m. In addition, a start signal ST is input to the input terminal V_IN of the core circuit RG1 in the first stage.
在核心電路RG1至RGm的訊框端子Fr_o係輸入訊框信號Frame_o。在核心電路RG1至RGm的訊框端子Fr_e係輸入訊框信號Frame_e。在核心電路RG1至RGm的清除端子CR係輸入清除信號CLR。A frame signal Frame_o is input to the frame terminals Fr_o of the core circuits RG1 to RGm. A frame signal Frame_e is input to the frame terminals Fr_e of the core circuits RG1 to RGm. A clear signal CLR is input to clear terminals CR of the core circuits RG1 to RGm.
在第奇數個核心電路RG1、RG3、……的時脈端子CLK係輸入時脈信號ClkA。在第偶數個核心電路RG2、RG4、……的時脈端子CLK係輸入時脈信號ClkB。時脈信號ClkA與時脈信號ClkB係具有互補性的相位關係。The clock signal ClkA is input to the clock terminals CLK of the odd-numbered core circuits RG1 , RG3 , . . . The clock signal ClkB is input to the clock terminals CLK of the even-numbered core circuits RG2, RG4, . . . The clock signal ClkA and the clock signal ClkB have a complementary phase relationship.
任意的核心電路RGi的輸出端子OUT係連接至上一段的核心電路RG(i-1)的重置端子RST_IN。在最末段的核心電路RGm的重置端子RST_IN係輸入清除信號CLR。The output terminal OUT of any core circuit RGi is connected to the reset terminal RST_IN of the core circuit RG(i-1) of the previous stage. A clear signal CLR is input to the reset terminal RST_IN of the core circuit RGm in the last stage.
複數個核心電路RG1至RGm的輸出端子OUT係分別連接至掃描線GL1至GLm。關於圖4的連接到各掃描線GL的電容器,其係連接到掃描線的像素的電容的簡化表現。The output terminals OUT of the plurality of core circuits RG1 to RGm are respectively connected to the scan lines GL1 to GLm. Regarding the capacitor connected to each scan line GL of FIG. 4 , it is a simplified representation of the capacitance of the pixel connected to the scan line.
控制電路15係生成前述的訊框信號Frame_o、訊框信號Frame_e、時脈信號ClkA、時脈信號ClkB、及清除信號CLR,將該些信號供給至移位暫存器11A。The
(核心電路RG的具體構成)(Concrete configuration of core circuit RG)
接著,針對核心電路RG的具體構成進行說明。圖5係圖4中所示的核心電路RG的電路圖。核心電路RG係具備:輸入部20、暫存器部21、輸出部22、下拉部23、及清除部24。核心電路RG係使用N型的場效電晶體(FET;Field Effect Transistor)而構成。以下,將FET簡稱為電晶體。在本實施形態中,就一例而言,構成核心電路RG的電晶體係以N通道TFT構成。在本說明書中,亦將電晶體的源極及汲極的其中一方稱為第1端子、將另一方稱為第2端子。Next, the specific configuration of the core circuit RG will be described. FIG. 5 is a circuit diagram of the core circuit RG shown in FIG. 4 . The core circuit RG includes an
輸入部20係用以接收輸入信號VIN的電路。輸入部20係具備2個電晶體M2、M5。在電晶體M2的閘極係透過輸入端子V_IN而輸入輸入信號VIN。輸入信號VIN係對應上一段的核心電路RG的輸出信號。電晶體M2的汲極係連接至自身的閘極。亦即,電晶體M2係做二極體(diode)連接。電晶體M2的源極係連接至節點An。電晶體M2係當輸入信號VIN為高位準(high level)時將輸入信號VIN轉送至節點An,當輸入信號VIN為低位準(low level)時關斷。The
在電晶體(亦稱為重置電晶體)M5的閘極係透過重置端子RST_IN而輸入重置信號RST。重置信號RST係對應下一段的核心電路RG的輸出信號。電晶體M5的汲極係連接至節點An。電晶體M5的源極係連接至被供給電壓Vgl的電源端子。電壓Vgl乃係用以將信號設定成低位準的基準電壓,乃係比信號的高位準電壓低的電壓。電壓Vgl係例如為比接地電壓GND低的負電壓係設定在-10V至-20V的範圍。The reset signal RST is input to the gate of the transistor (also called the reset transistor) M5 through the reset terminal RST_IN. The reset signal RST corresponds to the output signal of the core circuit RG of the next stage. The drain of transistor M5 is connected to node An. The source of the transistor M5 is connected to the power supply terminal to which the voltage Vgl is supplied. The voltage Vgl is a reference voltage for setting the signal to a low level, and is a voltage lower than the high level voltage of the signal. The voltage Vgl is, for example, a negative voltage lower than the ground voltage GND, and is set in the range of -10V to -20V.
暫存器部21乃係用以將選擇狀態及非選擇狀態的施加至電容器Cb間的電壓予以保持的電路。暫存器部21係具備2個反相器電路21o、21e、及電晶體M1b。The
反相器電路21o係具備3個電晶體M1o、M6o、M7o。在電晶體M1o的閘極係透過訊框端子Fr_o而輸入訊框信號Frame_o。電晶體M1o的汲極係連接至自身的閘極。電晶體M1o的源極係連接至節點Bno。電晶體M1o係當訊框信號Frame_o為高位準時將訊框信號Frame_o轉送至節點Bno,當訊框信號Frame_o為低位準時關斷。亦即,反相器電路21o係當訊框信號Frame_o為高位準時設成為致能。The inverter circuit 21o includes three transistors M1o, M6o, and M7o. A frame signal Frame_o is input to the gate of the transistor M1o through the frame terminal Fr_o. The drain of transistor M1o is connected to its gate. The source of transistor M1o is connected to node Bno. The transistor M1o transfers the frame signal Frame_o to the node Bno when the frame signal Frame_o is at a high level, and is turned off when the frame signal Frame_o is at a low level. That is, the inverter circuit 21o is set to be enabled when the frame signal Frame_o is at a high level.
電晶體M6o的閘極係連接至節點Bno。電晶體M6o的汲極係連接至節點An。電晶體M6o的源極係連接至被供給電壓Vgl的電源端子。電晶體M6o係具有將節點An的電位下拉的功能。The gate of transistor M6o is connected to node Bno. The drain of transistor M6o is connected to node An. The source of the transistor M6o is connected to the power supply terminal to which the voltage Vgl is supplied. The transistor M6o has a function of pulling down the potential of the node An.
電晶體M7o的閘極係連接至節點An。電晶體M7o的汲極係連接至節點Bno。電晶體M7o的源極係連接至被供給電壓Vgl的電源端子。電晶體M7o係具有將節點Bno的電位下拉的功能。The gate of transistor M7o is connected to node An. The drain of transistor M7o is connected to node Bno. The source of the transistor M7o is connected to the power supply terminal to which the voltage Vgl is supplied. The transistor M7o has a function of pulling down the potential of the node Bno.
反相器電路21e係具備3個電晶體M1e、M6e、M7e。在電晶體M1e的閘極係透過訊框端子Fr_e而輸入訊框信號Frame_e。電晶體M1e的汲極係連接至自身的閘極。電晶體M1e的源極係連接至節點Bne。電晶體M1e係當訊框信號Frame_e為高位準時將訊框信號Frame_e轉送至節點Bne,當訊框信號Frame_e為低位準時關斷。亦即,反相器電路21e係當訊框信號Frame_e為高位準時設成為致能。The
電晶體M6e的閘極係連接至節點Bne。電晶體M6e的汲極係連接至節點An。電晶體M6e的源極係連接至被供給電壓Vgl的電源端子。電晶體M6e係具有將節點An的電位下拉的功能。The gate of transistor M6e is connected to node Bne. The drain of transistor M6e is connected to node An. The source of the transistor M6e is connected to the power supply terminal to which the voltage Vgl is supplied. The transistor M6e has a function of pulling down the potential of the node An.
電晶體M7e的閘極係連接至節點An。電晶體M7e的汲極係連接至節點Bne。電晶體M7e的源極係連接至被供給電壓Vgl的電源端子。電晶體M7e係具有將節點Bne的電位下拉的功能。The gate of transistor M7e is connected to node An. The drain of transistor M7e is connected to node Bne. The source of the transistor M7e is connected to the power supply terminal to which the voltage Vgl is supplied. The transistor M7e has a function of pulling down the potential of the node Bne.
電晶體M1b的閘極係連接至節點An。電晶體M1b的電流路徑的一端係連接至節點Bno。電晶體M1b的電流路徑的另一端係連接至節點Bne。電晶體M1b係當節點An為高位準時將節點Bno與節點Bne連接。The gate of transistor M1b is connected to node An. One end of the current path of transistor M1b is connected to node Bno. The other end of the current path of the transistor M1b is connected to the node Bne. The transistor M1b connects the node Bno and the node Bne when the node An is at a high level.
輸出部22乃係用以將輸出信號輸出至掃描線GL的電路。輸出部22係具備電晶體(亦稱為輸出電晶體)M3、及電容器Cb。電晶體M3的閘極係連接至節點An。在電晶體M3的汲極係輸入時脈信號Clk。時脈信號Clk乃係時脈信號ClkA、ClkB其中任一者,當是第奇數個核心電路RG為時脈信號ClkA,當是第偶數個核心電路RG為時脈信號ClkB。電晶體M3的源極係連接至節點Qn。The
電容器Cb的一方的電極係連接至節點An,電容器Cb的另一方的電極係連接至節點Qn。節點Qn係連接至對應的掃描線GL。One electrode of the capacitor Cb is connected to the node An, and the other electrode of the capacitor Cb is connected to the node Qn. The node Qn is connected to the corresponding scan line GL.
下拉部23乃係用以將節點Qn的電位下拉的電路。下拉部23係具備2個電晶體(亦稱為下拉電晶體)M4o、M4e。電晶體M4o的閘極係連接至節點Bno。電晶體M4o的汲極係連接至節點Qn。電晶體M4o的源極係連接至被供給電壓Vgl的電源端子。The pull-
電晶體M4e的閘極係連接至節點Bne。電晶體M4e的汲極係連接至節點Qn。電晶體M4e的源極係連接至被供給電壓Vgl的電源端子。The gate of transistor M4e is connected to node Bne. The drain of transistor M4e is connected to node Qn. The source of the transistor M4e is connected to the power supply terminal to which the voltage Vgl is supplied.
清除部24乃係用以清除節點An、及節點Qn的電路。清除部24係具備2個電晶體M8、M9。在電晶體M8的閘極係透過清除端子CR而輸入清除信號CLR。電晶體M8的汲極係連接至節點Qn。電晶體M8的源極係連接至被供給電壓Vgl的電源端子。The
在電晶體M9的閘極係透過清除端子CR而輸入清除信號CLR。電晶體M9的汲極係連接至節點An。電晶體M9的源極係連接至被供給電壓Vgl的電源端子。A clear signal CLR is input to the gate of the transistor M9 through the clear terminal CR. The drain of transistor M9 is connected to node An. The source of the transistor M9 is connected to the power supply terminal to which the voltage Vgl is supplied.
[4] 動作[4] Action
針對如上述構成的液晶顯示裝置1的動作進行說明。圖6係說明液晶顯示裝置1的基本動作之時序圖。圖6的列編號係對應掃描線GL的編號。The operation of the liquid
控制電路15係從外部接收信號Vsync。信號Vsync一旦變為低位準後,到再度成為低位準為止的期間為1訊框。所謂的1訊框係指將全部的掃描線掃描1遍的期間,此外,其係指將1個圖像顯示至畫面的期間。The
移位暫存器11A係根據從控制電路15送來的信號進行動作。在1訊框期間中,移位暫存器11A所含的核心電路RG1至RGm係以依序輸出脈波信號的方式動作。The
圖7係說明液晶顯示裝置1的更詳細的動作之時序圖。FIG. 7 is a timing chart illustrating a more detailed operation of the liquid
訊框信號Frame_o、Frame_e係按每1訊框交替設成為致能(高位準)。2個反相器電路21o、21e係相應於訊框信號Frame_o、Frame_e交替動作。控制電路15係在信號Vsync為低位準的期間,切換訊框信號Frame_o、Frame_e的狀態。The frame signals Frame_o and Frame_e are alternately set to enable (high level) for each frame. The two
就一例而言,假設訊框信號Frame_o設成為致能(高位準)。訊框信號Frame_e為低位準。當訊框信號Frame_o成為高位準,反相器電路21o的電晶體M1o便導通,反相器電路21o便設成為致能。反相器電路21e的電晶體M1e係關斷,反相器電路21e係設成為禁能。As an example, it is assumed that the frame signal Frame_o is set to enabled (high level). The frame signal Frame_e is at a low level. When the frame signal Frame_o becomes a high level, the transistor M1o of the inverter circuit 21o is turned on, and the inverter circuit 21o is set to be enabled. The transistor M1e of the
在訊框信號Frame_o變成為高位準後,啟動信號ST設成為高位準。藉此,第1段的核心電路RG1的輸入信號VIN成為高位準。如此一來,輸入部20的電晶體M2便導通,節點An成為高位準。After the frame signal Frame_o becomes a high level, the start signal ST is set to a high level. Thereby, the input signal VIN of the core circuit RG1 of the first stage becomes a high level. In this way, the transistor M2 of the
當節點An成為高位準,反相器電路21o的電晶體M7o便導通,節點Bno成為低位準。亦即,反相器電路21o係在節點Bno保持節點An的反轉資料。藉此,使下拉部23的電晶體M4o關斷,節點Qn的下拉動作停止。When the node An becomes a high level, the transistor M7o of the inverter circuit 21o is turned on, and the node Bno becomes a low level. That is, the inverter circuit 21o holds the inversion data of the node An at the node Bno. Thereby, the transistor M4o of the pull-down
此外,當節點An成為高位準,輸出部22的電晶體M3便導通。接著,時脈信號ClkA變成為高位準。如此一來,掃描線GL1便成為高位準。In addition, when the node An becomes a high level, the transistor M3 of the
第2段的核心電路RG2係從上一段的核心電路RG1接收輸出信號作為輸入信號VIN。接著,時脈信號ClkB變成為高位準。如此一來,核心電路RG2便將掃描線GL2設成為高位準。The core circuit RG2 of the second stage receives the output signal from the core circuit RG1 of the previous stage as the input signal VIN. Next, the clock signal ClkB becomes a high level. In this way, the core circuit RG2 sets the scan line GL2 to a high level.
第1段的核心電路RG1係接收第2段的核心電路RG2的輸出信號作為重置信號RST。重置信號RST係輸入至輸入部20的電晶體M5的閘極。如此一來,電晶體M5便導通,節點An成為低位準。The core circuit RG1 of the first stage receives the output signal of the core circuit RG2 of the second stage as the reset signal RST. The reset signal RST is input to the gate of the transistor M5 of the
當節點An成為低位準,反相器電路21o的電晶體M7o便關斷,節點Bno成為高位準。亦即,反相器電路21o係在節點Bno保持節點An的反轉資料。當節點Bno成為高位準,電晶體M6o便導通,節點An保持在低位準。藉此,使下拉部23的電晶體M4o導通,節點Qn成為低位準。When the node An becomes a low level, the transistor M7o of the inverter circuit 21o is turned off, and the node Bno becomes a high level. That is, the inverter circuit 21o holds the inversion data of the node An at the node Bno. When the node Bno becomes a high level, the transistor M6o is turned on, and the node An remains at a low level. Thereby, the transistor M4o of the pull-
此外,當節點An成為低位準,輸出部22的電晶體M3便關斷。藉此,使掃描線GL1成為低位準。In addition, when the node An becomes a low level, the transistor M3 of the
另外,就詳細的設計而言,是以避免鄰接的核心電路RG同時動作的方式設計。因此,是以使時脈信號ClkA的脈波與時脈信號ClkB的脈波不會重疊的方式,在彼此的波緣(edge)間空著間隔。In addition, in the detailed design, it is designed so that the adjacent core circuits RG may not operate at the same time. Therefore, there is a space between the edges of each other so that the pulse wave of the clock signal ClkA and the pulse wave of the clock signal ClkB do not overlap.
後續同樣地,核心電路RG3至RGm係依序輸出脈波信號。Similarly, the core circuits RG3 to RGm sequentially output pulse signals.
在最末段的核心電路RGm輸出脈波信號後,清除信號CLR設成為高位準。當清除信號CLR成為高位準,清除部24的電晶體M8、M9便導通。如此一來,節點Qn、及節點An便成為低位準。藉此,核心電路RGm係將掃描線GLm設成為低位準。After the core circuit RGm in the last stage outputs the pulse signal, the clear signal CLR is set to a high level. When the clear signal CLR becomes a high level, the transistors M8 and M9 of the
然後,訊框信號Frame_e設成為高位準、訊框信號Frame_o設成為低位準。如此一來,核心電路RG的反相器電路21e便設成為致能。然後,重覆進行藉由移位暫存器11A進行的掃描動作。Then, the frame signal Frame_e is set to a high level, and the frame signal Frame_o is set to a low level. In this way, the
藉由如上述的動作,在核心電路RG,能夠拿掉持續施加正向偏壓的電晶體。藉此,能夠抑制構成核心電路RG的電晶體的特性發生劣化。具體而言,在就電晶體而言使用TFT的情形中,當持續施加正向偏壓,臨限電壓Vth便發生偏移。但在本實施形態中係能夠抑制TFT的特性發生劣化。By the above-described operation, in the core circuit RG, the transistor to which the forward bias voltage is continuously applied can be removed. Thereby, it is possible to suppress deterioration of the characteristics of the transistors constituting the core circuit RG. Specifically, in the case of using a TFT as a transistor, when a forward bias voltage is continuously applied, the threshold voltage Vth is shifted. However, in the present embodiment, deterioration of the characteristics of the TFT can be suppressed.
接著,針對在選擇期間中的核心電路RG的反相器動作進行說明。所謂的選擇期間係指掃描線被選擇的期間,乃係掃描線輸出脈波信號的期間。所謂的非選擇期間係指選擇期間以外的期間,乃係掃描線沒有輸出脈波信號的期間。Next, the inverter operation of the core circuit RG in the selection period will be described. The so-called selection period refers to the period during which the scan line is selected, and is the period during which the scan line outputs the pulse signal. The so-called non-selection period refers to a period other than the selection period, that is, a period in which no pulse signal is output from the scanning line.
圖8係說明在選擇期間中的核心電路RG的反相器動作之示意圖。就一例而言,假設訊框信號Frame_o設成為致能(高位準(圖8中的「Hi」)),反相器電路21o進行反相器動作。訊框信號Frame_e為低位準(圖8中的「Lo」)。FIG. 8 is a schematic diagram illustrating the inverter operation of the core circuit RG in the selection period. As an example, if the frame signal Frame_o is set to be enabled (high level (“Hi” in FIG. 8 )), the inverter circuit 21o performs the inverter operation. The frame signal Frame_e is at a low level (“Lo” in FIG. 8 ).
在電晶體M2的閘極係從上一段的核心電路RG輸入高位準(圖8中的「ON」)的輸入信號VIN。藉此,電晶體M2導通,節點An成為高位準(圖8中的「Hi」)。The input signal VIN of a high level (“ON” in FIG. 8 ) is input to the gate of the transistor M2 from the core circuit RG of the previous stage. Thereby, the transistor M2 is turned on, and the node An becomes a high level (“Hi” in FIG. 8 ).
在電晶體M1o的閘極係輸入高位準的訊框信號Frame_o。因此,電晶體M1o導通,反相器電路21o係設成為致能。A high-level frame signal Frame_o is input to the gate of the transistor M1o. Therefore, the transistor M1o is turned on, and the inverter circuit 21o is set to be enabled.
由於節點An為高位準,故電晶體M7o導通,節點Bno係被下拉。圖8中的箭頭表示電流。Since the node An is at a high level, the transistor M7o is turned on, and the node Bno is pulled down. Arrows in FIG. 8 indicate current flow.
此外,在選擇期間中的反相器動作係亦能夠令反相器電路21e的電晶體M7e動作。亦即,由於節點An為高位準,故電晶體M1b、M7e導通。因此,節點Bno係亦被電晶體M1b、節點Bne、及電晶體M7e的路徑下拉。藉此,能夠將節點Bno確實地設定成低位準。In addition, the inverter operation in the selection period can also operate the transistor M7e of the
電晶體M6o的驅動能力係設定成比電晶體M7o的驅動能力大。在非選擇期間係藉由電晶體M6o將節點An下拉,能夠將節點An確實地設定成低位準。The drive capability of the transistor M6o is set to be larger than the drive capability of the transistor M7o. During the non-selection period, the node An is pulled down by the transistor M6o, so that the node An can be surely set to the low level.
就用以實現上述反相器動作的條件而言,電晶體M6、M7係以滿足下述條件的方式設定。其中,電晶體M6係指電晶體M6o、M6e各者,電晶體M7係指電晶體M7o、M7e各者。將電晶體M6、M7的通道寬度分別表記為W6、W7。通道寬度係亦稱為閘極寬度。As for the conditions for realizing the above-described inverter operation, the transistors M6 and M7 are set so as to satisfy the following conditions. The transistor M6 refers to each of the transistors M6o and M6e, and the transistor M7 refers to each of the transistors M7o and M7e. The channel widths of the transistors M6 and M7 are denoted as W6 and W7, respectively. The channel width is also referred to as the gate width.
W7≦W6≦2×W7W7≦W6≦2×W7
藉由設定為「W6≦2×W7」,使電晶體M7o、M7e加起來的驅動能力成為比電晶體M6o(或電晶體M6e)的驅動能力大。藉此,在選擇期間,能夠將節點Bno確實地設定成低位準。By setting "W6≦2×W7", the combined driving capability of the transistors M7o and M7e is made larger than the driving capability of the transistor M6o (or the transistor M6e). Thereby, during the selection period, the node Bno can be surely set to the low level.
藉由設定為「W7≦W6」,使電晶體M6的驅動能力成為比電晶體M7的驅動能力大。藉此,在非選擇期間,能夠將節點An確實地設定成低位準。By setting "W7≦W6", the drive capability of the transistor M6 is made larger than the drive capability of the transistor M7. Thereby, during the non-selection period, the node An can be surely set to the low level.
將目光移至靠近最末段的核心電路RG所含的反相器電路。反相器電路21o、21e當中設成為禁能的反相器電路(例如,假設為反相器電路21e)的節點Bne的電位係因電晶體M1e的漏(leak)電流而不斷降低。因此,在靠近最末段的核心電路RG中,藉由在選擇期間電晶體M1b導通,藉此使設成為致能之側的節點Bno與節點Bne接通,藉此,形成能夠更加穩健地設定成低位準的架構。Move your attention to the inverter circuit included in the core circuit RG near the last stage. Among the
接著,針對第1段的核心電路RG1的詳細的驅動波形進行說明。Next, detailed driving waveforms of the core circuit RG1 in the first stage will be described.
圖9及圖10係第1段的核心電路RG1的驅動波形。圖9係顯示節點An、Bno、Bne的波形。圖10係顯示訊框信號Frame_o、Frame_e、及掃描線GL1的波形。圖9及圖10的橫軸為時間(msec),縱軸為電壓(V)。波形振幅為Hi=11V、Lo=-10V。掃描線的脈波寬度約70μs,訊框頻率為60Hz。9 and 10 show the driving waveforms of the core circuit RG1 in the first stage. FIG. 9 shows the waveforms of nodes An, Bno, and Bne. FIG. 10 shows the waveforms of the frame signals Frame_o, Frame_e, and the scan line GL1. The horizontal axis of FIGS. 9 and 10 is time (msec), and the vertical axis is voltage (V). The waveform amplitude is Hi=11V, Lo=-10V. The pulse width of the scan line is about 70 μs, and the frame frequency is 60 Hz.
首先,訊框信號Frame_o設成為致能(高位準),反相器電路21o設成為致能。接著,節點An成為高位準,藉由反相器電路21o的反相器動作,節點Bno成為低位準。此外,可知在節點Bno成為低位準的同時,反相器電路21e的節點Bne成為了低位準。藉此,反相器電路21e的電晶體M4e、M6e的閘極電壓係保持在低位準直到訊框信號Frame_e變成為高位準。然後,在時脈信號ClkA輸入的時序,脈波信號輸出至掃描線GL1。First, the frame signal Frame_o is enabled (high level), and the inverter circuit 21o is enabled. Next, the node An becomes the high level, and the node Bno becomes the low level by the inverter operation of the inverter circuit 21o. In addition, it can be seen that the node Bne of the
接著,針對最末段的核心電路RGm的詳細的驅動波形進行說明。Next, the detailed driving waveform of the core circuit RGm in the last stage will be described.
圖11及圖12係最末段的核心電路RGm的驅動波形。圖11係顯示節點An、Bno、Bne的波形。圖12係顯示訊框信號Frame_o、Frame_e、及掃描線GLm的波形。11 and 12 are driving waveforms of the core circuit RGm in the last stage. FIG. 11 shows the waveforms of nodes An, Bno, and Bne. FIG. 12 shows the waveforms of the frame signals Frame_o, Frame_e, and the scan line GLm.
同核心電路RG1的情形一樣地,節點An成為高位準,藉由反相器電路21o的反相器動作,節點Bno成為低位準。然後,在時脈信號ClkA輸入的時序,脈波信號輸出至掃描線GLm。As in the case of the core circuit RG1, the node An becomes the high level, and the node Bno becomes the low level by the inverter operation of the inverter circuit 21o. Then, at the timing when the clock signal ClkA is input, the pulse signal is output to the scanning line GLm.
此外,在最末段的核心電路RGm中,因電晶體M1e的漏電流,節點Bne的電位係在掃描線GLm被選擇前就已成為了低位準。因此,藉由電晶體M1b導通,使節點Bno與節點Bne接通,能夠將節點Bno更加穩健設定成低位準。In addition, in the core circuit RGm in the last stage, the potential of the node Bne has become a low level before the scanning line GLm is selected due to the leakage current of the transistor M1e. Therefore, by turning on the transistor M1b to connect the node Bno and the node Bne, the node Bno can be set to a low level more robustly.
[5] 實施形態的效果[5] Effects of Embodiment
依據本實施形態,各核心電路RG具備2個反相器電路21o、21e,反相器電路21o、21e相應於訊框信號Frame_o、Frame_e交替設成為致能。因此,能夠防止電壓持續施加至構成移位暫存器11A的電晶體(例如TFT)。According to the present embodiment, each core circuit RG includes two
具體而言,能夠抑制閘極連接到節點Bno的電晶體M6o的特性發生劣化。具體而言,能夠抑制電晶體M6o的臨限電壓發生偏移。藉此,能夠抑制反相器電路21o變得功能不良。針對電晶體M6e亦同。因此,能夠抑制移位暫存器11A誤動作。Specifically, deterioration of the characteristics of the transistor M6o whose gate is connected to the node Bno can be suppressed. Specifically, it is possible to suppress a shift in the threshold voltage of the transistor M6o. Thereby, it can suppress that the inverter circuit 21o becomes malfunctioning. The same applies to the transistor M6e. Therefore, malfunction of the
此外,能夠抑制閘極連接到節點Bno的電晶體M4o的特性發生劣化。具體而言,能夠抑制電晶體M4o的臨限電壓發生偏移。藉此,能夠抑制用以將掃描線下拉的電晶體M4o變得功能不良。針對電晶體M4e亦同。因此,能夠抑制移位暫存器11A誤動作。Furthermore, it is possible to suppress deterioration of the characteristics of the transistor M4o whose gate is connected to the node Bno. Specifically, it is possible to suppress the shift of the threshold voltage of the transistor M4o. Thereby, the transistor M4o for pulling down the scanning line can be prevented from becoming malfunctioning. The same applies to the transistor M4e. Therefore, malfunction of the
此外,構成為,將節點Bno與節點Bne以電晶體M1b連接,當節點An為高位準時,使節點Bno與節點Bne接通。藉此,例如在反相器電路21o設成為致能的情形中,能夠將節點Bno更確實地設定成低位準。因此,能夠抑制移位暫存器11A誤動作。In addition, the node Bno and the node Bne are connected by the transistor M1b, and when the node An is at a high level, the node Bno and the node Bne are turned on. Thereby, for example, when the inverter circuit 21o is enabled, the node Bno can be set to the low level more reliably. Therefore, malfunction of the
此外,即使掃描線的條數增加,仍能夠令移位暫存器11A確實地動作。In addition, even if the number of scanning lines increases, the
另外,在上述實施形態中係按每1訊框切換訊框信號Frame_o、Frame_e的電壓關係。但並不限定於此,亦可為按每2訊框以上的期間切換訊框信號Frame_o、Frame_e的電壓關係。In addition, in the above-mentioned embodiment, the voltage relationship between the frame signals Frame_o and Frame_e is switched every frame. However, it is not limited to this, and the voltage relationship between the frame signals Frame_o and Frame_e may be switched every two or more frame periods.
此外,在上述實施形態中係針對全部的電晶體皆以N型電晶體構成時的情形進行說明。但並不限定於此,藉由令電源電壓及時脈信號的極性反轉,亦能夠將全部的電晶體皆以P型電晶體構成。In addition, in the above-mentioned embodiment, the case where all the transistors are composed of N-type transistors has been described. However, it is not limited to this, and by inverting the polarities of the power supply voltage and the pulse signal, all the transistors can be formed of P-type transistors.
此外,在上述實施形態中係就顯示裝置而言舉液晶顯示裝置為例進行說明。但並不限定於此,亦能夠適用至有機EL顯示裝置等其他顯示裝置。In addition, in the above-mentioned embodiment, the liquid crystal display device is taken as an example of a display device and demonstrated. However, it is not limited to this, and it can apply to other display apparatuses, such as an organic electroluminescent display apparatus.
本發明並不為上述實施形態所限定,在實施階段當能夠在不脫離本發明主旨的範圍內進行各種變形。此外,各實施形態係亦可適宜組合來實施,此時可獲得組合的效果。此外,上述實施形態係包含各種發明,藉由從所揭示的複數個構成要件中選擇出的組合,可抽出各種發明。例如,即便從實施形態所示的全部的構成要件中刪除一些構成要件,只要能夠解決課題、獲得效果,則可將該刪除構成要件的構成抽出作為發明。The present invention is not limited to the above-described embodiment, and various modifications can be made in the implementation stage without departing from the gist of the present invention. In addition, each embodiment can also be implemented by combining suitably, and the effect of a combination can be acquired in this case. In addition, the above-mentioned embodiment includes various inventions, and various inventions can be extracted by a combination selected from a plurality of disclosed constituent elements. For example, even if some components are deleted from all the components shown in the embodiment, as long as the problem can be solved and the effect can be obtained, the configuration of the deleted components can be extracted as an invention.
1:液晶顯示裝置 2,IC:積體電路 10:像素陣列 11:掃描線驅動電路 11-1,11-2,GIP:掃描線驅動器 11A:移位暫存器 12:信號線驅動電路 13:共同電極驅動電路 14:電壓產生電路 15:控制電路 16:開關元件(主動元件) 20:輸入部 21:暫存器部 21e,21o:反相器電路 22:輸出部 23:下拉部 24:清除部 An,Bne,Bno,Qn:節點 Cb:電容器 Clc:液晶電容(液晶元件) Clk,ClkA,ClkB:時脈信號 CLK:時脈端子 CLR:清除信號 CNT:控制信號 CR:清除端子 Cs:儲存電容 DT:圖像資料 Frame_e,Frame_o:訊框信號 Fr_e,Fr_o:訊框端子 GL,GL1~GLm:掃描線 GND:接地電壓 M1e,M1b,M1o,M2,M5,M6,M6e,M6o,M7,M7e,M7o,M8,M9:電晶體 M3:電晶體(輸出電晶體) M4e,M4o:電晶體(下拉電晶體) OUT:輸出端子 PX:像素 RG,RG1~RGm,RGi,RG(i+1):核心電路 RST:重置信號 RST_IN:重置端子 SL,SL1~SLn:信號線 ST:啟動信號 Vcom:共同電壓 VIN:輸入信號 Vgl:電壓 Vsync:信號 Vth:臨限電壓 V_IN:輸入端子 W6,W7:電晶體的通道寬度 1: Liquid crystal display device 2, IC: integrated circuit 10: Pixel array 11: Scan line driver circuit 11-1, 11-2, GIP: scan line driver 11A: Shift register 12: Signal line driver circuit 13: Common electrode drive circuit 14: Voltage generation circuit 15: Control circuit 16: Switching element (active element) 20: Input section 21: Scratchpad Department 21e, 21o: Inverter circuit 22: Output part 23: Pull Down 24: Clearance Department An,Bne,Bno,Qn: Node Cb: capacitor Clc: Liquid crystal capacitor (liquid crystal element) Clk, ClkA, ClkB: clock signal CLK: Clock terminal CLR: clear signal CNT: control signal CR: Clear terminal Cs: storage capacitor DT: Image data Frame_e,Frame_o: Frame signal Fr_e,Fr_o: Frame terminals GL, GL1~GLm: scan line GND: ground voltage M1e, M1b, M1o, M2, M5, M6, M6e, M6o, M7, M7e, M7o, M8, M9: Transistor M3: Transistor (output transistor) M4e, M4o: Transistor (pull down transistor) OUT: output terminal px: pixel RG, RG1~RGm, RGi, RG(i+1): core circuit RST: reset signal RST_IN: reset terminal SL, SL1~SLn: Signal line ST: start signal Vcom: common voltage VIN: input signal Vgl: Voltage Vsync:Signal Vth: threshold voltage V_IN: input terminal W6, W7: The channel width of the transistor
圖1係實施形態的液晶顯示裝置的佈局圖(layout)。 圖2係實施形態的液晶顯示裝置的方塊圖(block diagram)。 圖3係圖2中所示的像素陣列的電路圖。 圖4係掃描線驅動電路所含的移位暫存器的方塊圖。 圖5係圖4中所示的核心電路的電路圖。 圖6係說明液晶顯示裝置的基本動作之時序圖(timing chart)。 圖7係說明液晶顯示裝置的更詳細的動作之時序圖。 圖8係說明在選擇期間中的核心電路的反相器動作之示意圖。 圖9係第1段的核心電路的驅動波形。 圖10係第1段的核心電路的驅動波形。 圖11係最末段的核心電路的驅動波形。 圖12係最末段的核心電路的驅動波形。 FIG. 1 is a layout diagram of a liquid crystal display device according to an embodiment. FIG. 2 is a block diagram of the liquid crystal display device according to the embodiment. FIG. 3 is a circuit diagram of the pixel array shown in FIG. 2 . FIG. 4 is a block diagram of a shift register included in the scan line driving circuit. FIG. 5 is a circuit diagram of the core circuit shown in FIG. 4 . FIG. 6 is a timing chart illustrating the basic operation of the liquid crystal display device. FIG. 7 is a timing chart illustrating a more detailed operation of the liquid crystal display device. FIG. 8 is a schematic diagram illustrating the inverter operation of the core circuit during the selection period. FIG. 9 shows the driving waveforms of the core circuit of the first stage. FIG. 10 shows the driving waveforms of the core circuit of the first stage. Fig. 11 is the driving waveform of the core circuit of the last stage. Fig. 12 shows the driving waveforms of the core circuit of the last stage.
20:輸入部 20: Input section
21:暫存器部 21: Scratchpad Department
21e,21o:反相器電路 21e, 21o: Inverter circuit
22:輸出部 22: Output part
23:下拉部 23: Pull Down
24:清除部 24: Clearance Department
An,Bne,Bno,Qn:節點 An,Bne,Bno,Qn: Node
Cb:電容器 Cb: capacitor
Clk:時脈信號 Clk: clock signal
CLR:清除信號 CLR: clear signal
Frame_e,Frame_o:訊框信號 Frame_e,Frame_o: Frame signal
GL:掃描線 GL: scan line
M1e,M1b,M1o,M2,M5,M6e,M6o,M7e,M7o,M8,M9:電晶體 M1e, M1b, M1o, M2, M5, M6e, M6o, M7e, M7o, M8, M9: Transistor
M3:電晶體(輸出電晶體) M3: Transistor (output transistor)
M4e,M4o:電晶體(下拉電晶體) M4e, M4o: Transistor (pull down transistor)
RG:核心電路 RG: core circuit
RST:重置信號 RST: reset signal
VIN:輸入信號 VIN: input signal
Vgl:電壓 Vgl: Voltage
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